1989_Unitrode_Semiconductor_Databook_and_Application_Notes 1989 Unitrode Semiconductor Databook And Application Notes

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SEMICONDUCTOR
PRODUCTS

PART NUMBER INDEX
RECTIFIERS
RECTIFIER BRIDGES & MODULES
POWER ZENERS AND TRANSIENT VOLTAGE SUPPRESSORS
SWITCHING & GENERAL PURPOSE DIODES
PIN DIODES
POWER HYBRIDS
POWER TRANSISTORS & DARLINGTONS
SCRs & THYRISTORS
SENSISTORS®
SURFACE MOUNT DEVICES
APPLICATION NOTES
SALES OFFICES
© Copyright 1989 Unitrode Corporation, Watertown, MA.Allrights reserved.

..
..
-.-.
.-.
-.-.
l1li
IDI

Unitrode Corporation makes no representation that
the use or interconnection of the circuits described
herein will not infringe on existing or future patent
rights, nor do the descriptions contained herein
imply the granting of licenses to make, use or sell
equipment constructed in accordance therewith.
© 1989, by Unitrode Corporation. All rights reserved.
This book, or any part or parts thereof, must not be
reproduced in any form without permission of the
copyright owner.

NOTE: The information presented 'in this section is
believed to be accurate and reliable. However, no
responsibility is assumed by Unitrode Corporation
for its use.

Doorbell- and MagnumI.') are
registered trademarks of Unitrode Corporation
BISYNTM, UNIBONDTM and HV PIUS™ are
trademarks of Unitrode Corporation
MULTIWATTilI is a registered trademark of SGS Corporation
Sensistorl!l is a registered trademark of Texas Instruments

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UNITRODE CORPORATION
MISSION STATEMENT
Our Mission is to be a recognized leader in providing innovative solutions to the high
performance needs of users of electronic components and subsystems.
We will excel at understanding and satisfying, in a timely manner, the high value-added
needs of our customers. We will deliver quality products of superior performance that
are fit for their intended use. They will be supplied on time and at a fair price. By
matching our capabilities and customers' needs, we will best achieve our profit-growth
objective.
We recognize that loyal, productive employees are our most important resource. Therefore, we will provide a safe, clean working environment and foster open communications,
mutual respect and trust at all levels. We will encourage participation of all employees
and recognize and reward their efforts in meeting our goals and our customers' expectations. We will provide equal opportunity in employment and promote employee
development and advancement.
Successful innovation and the willingness to take risks are key to achieving individual
and company growth.
Our relationships with customers, suppliers, stockholders, community and government
will be characterized by mutual understanding and trust. We are committed to
conducting our business in an ethical and responsible manner.

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ABOUT THE DATABOOK ...
This Data book contains complete data and applications information about Unitrode's broad line of
discrete semiconductors for industrial and military
applications. It includes the new ultra-fast HV
Plus™ rectifier and the unique new electrically and
mechanically superior UNIBOND™ diode.
.
For more information about these products or any·
other Unitrode components, please call or write.

iv

TABLE OF CONTENTS
Page

Section
1

PART NUMBER INDEX .............................................. 1-3

2

RECTIFIERS
Product Selection Guides
Schottky Rectifiers .............................................. 2-3
HV Plus Rectifiers .............................................. 2-5
Ultra-Fast Recovery Rectifiers ...................................... 2-6
Super-Fast Recovery ............................................ 2-8
Fast Recovery ................................................. 2-9
Bi-Synchronous Rectifier .......................................... 2-9
Standard Recovery ............................................. 2-10
Datasheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-11

3

RECTIFIER BRIDGES & MODULES
Product Selection Guides
Rectifier Bridges ............................................... 3-3
Rectifier Modules ............................................... 3-6
Datasheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-12

4

POWER ZENERS AND TRANSIENT VOLTAGE SUPPRESSORS
Product Selection Guides
Transient Voltage Supressors ...................................... 4-3
Transient Voltage Supressors, Bidirectional .................. ~ .......... 4-4
Power Zeners ................................................. 4-5
Datasheets ..................................................... 4-7

5

SWllCHING & GENERAL PURPOSE DIODES
Product Selection Guides
UNIBONDTh1 Diodes ............................................. 5-3
Switching & General Purpose Diodes ................................. 5-3
ProElectron Switching Diodes ...................................... 5-4
Datasheets ............. ' ........................................ 5-5

6

PINDIODES
Product Selection Guides ........................................... 6-3
Mechanical Specifications ......................................... 6-6
Datasheets .................................................... 6-10

7

POWER HYBRIDS
Product Selection Guides ........................................... 7-3
Oatasheets ...................... ,............................... 7-4

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404. FAX (617) 924-1235

v

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Section

Ppge

8

POWER TRANSISTORS & DARLINGTONS
Product Selection Guides
NPN Bipolar Power Switching Transistors .............................. 8-3
Power Darlingtons ............................ : ................. 8-6
Datasheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... : ...... 8-7

9

SCRs & THYRISTORS
Thyristors ..... " . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .......... 9-3
Ultra-Fast Switching ............................................. 9-4
Radiation Hardened SCRs ........................................ 9-4
PUTs ...................................................... , .9-4
Datasheets ..................................................... 9-5

10

SENSISTORS@
Product Selection Guides ............................. , . . . . . . . . .... 10-3
Datasheets ............................................ : .. . .... lOA

11

SURFACE MOUNT DEVICES
Introduction .................................................... 11-3
Product Selection Guides ...........•......... , ...... , .. ; ........... 11-5

12

APPLICATION NOTES
Table of Contents .................................. : .............. 12-3
Application Notes ............... : ............................... 12-4

l3

SALES OFFICES .................................................. 13-3

.,.

UNITRODE • SEMICONDUCTOIl PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEl. (617) 926·0404 • FAX (617) 924·1235

vi

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PART NUMBER INDEX

Part Number Index . .............................................. 1-3

UNITROOE • SEMICONOUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172

TEL. (617) 926·0404 • FAX (617) 924·1235

1-1

PRINTED IN U S.A

..

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

1·2

PRINTED IN USA.

PART NUMBER INDEX

PAGE

5-7

1N251, J
1N456
1N456A
1N457, J
1N457A
1N458, J
1N458A
1N459, J
1N459A
1N483
1N483A
1N483B, J, JTX
1N483C
1N485
1N485B, J, JTX

5-9

1N643, J

5-11
5-11
5-11
5-11

1N645J, JTX
1N645-lJ, JTX, JTXV
1N647, J, JTX
1N647-1, J, JTX, JTXV

5-9
5-9
5-13
5-15
5-16

1N662, J
1N663, J
1N914, J, JTX
1N914-1, A, B
1N916,B
1N3064J, JTX
1N3070, J, JTX

5-17

1N3595,J,JTX,JTXV

5-18

1N3600, J, JTX, JTXV

2-11
2-11
2-11
2-11

1N3611,
1N3612,
1N3613,
1N3614,

4-27

1N4096-1N4098

5-13
5-13
5-20
5-18
5-18
5-20
5-21
5-22
5-20

1N4148, J, JTX,JTXV
1N4148-lJ, JTX, JTXV
1N4149
1N4150,J,JTX,JTXV
1N4150-lJ, JTX, JTXV
1N4151
1N4152
1N4153, J, JTX, JTXV
1N4153-lJ, JTX, JTXV
1N4154

2-13
2-13
2-13
2-13
2-13

1N4245,J,JTX,JTXV
1N4246,J,JTX,JTXV
1N4247, J, JTX, JTXV·
1N4248, J, JTX, JTXV
1N4249,J,JTX,JTXV

5-5
5-6

*
5-6

*

5-6

.
*

5-6

*
,~

5-7

*
*

.
*

*

DESCRIPTION

PART NUMBER

J,
J,
J,
J,

JTX
JTX
JTX
JTX

PAGE

GENERAL PURPOSE
DIODE
75mA; 40V; 00-7
90mA; 25V
75mA; 60V
55mA; 125V; 00-7
40mA; 175V
55mA; 150V; 00-7
100mA; 150V
40mA; 200V; 00-7
100mA; 200V
100mA; 70V
100mA; 70V
200mA; 80V; 00-7
100mA; 70V
100mA; 180V
200mA; 200V; 00-7
SWITCHING DIODE
40mA; 200V; 00-7
RECTIFIER
400mA; 270V
400mA; 270V
400mA; 480V
400mA; 480V
SWITCHING DIODE
40mA; 100V; 00-7
60mA; 100V; 00-7
75mA; 100V
75mA; 100V
75mA; 100V
75mA; 75V; 00-7
150mA; 200V; 00-7
GENERAL PURPOSE
DIODE
150mA; 150V; 00-7
SWITCHING DIODE
200mA; 75V; 00-7
RECTIFIER
l.OA; 200V
l.OA; 400V
1.0A; 600V
1.0A; 800V
ZENER
3.0W; 5%
SWITCHING DIODE
200mA; 100V; 00-35
150mA; 100V; 00-35
200mA; 75V; 00-35
200mA; 75V; 00-35
200mA; 75V; 00-35
200mA; 75V; 00-35
200m A; 40V; 00-35
150mA; 75V; 00-35
150mA; 75V; 00-35
200mA; 35V; 00-35
RECTIFIER
l.OA; 200V
l.OA; 400V
l.OA; 600V
l.OA; 800V
l.OA; lOOOV

PART NUMBER

5-21
5-21
5-20
5-20
5-20
5-20
5-24
5-24
5-25
5-24
5-15
5-15

1N4305
1N4444
1N4446
1N4447
1N4448
1N4449
1N4450
1N4451
1N4452
1N4453
1N4454, J, JTX, JTXV
1N4454-1, J, JTX, JTXV

4-7

1N4461-1N4496, J,
JTX, JTXV

5-26
5-13
5-15
5-22
5-25
5-25
5-28

1N4500, J, JTX
1N4531,J,JTX,JTXV
1N4532,J,JTX,JTXV
1N4534, J,JTX, JTXV
1N4607
1N4608
1N4727

4-27

1N4883-1N4884

5-16

1N4938, J, JTX

2-15
2-15
2-15

1N4942,J,JTX,JTXV
1N4944, J, JTX,JTXV
1N4946,J,JTX,JTXV

4-9
4-27
4-31

1N4954-1N4996, J,
JTX, JTXV
1N5063-1N5117
1N5118-1N5134

2-17
2-17
2-17
2-17
2-19
2-19
2-19
2-19
2-19
2-19

1N5186, J, JTX
1N5187, J, JTX
1N5188, J, JTX
1N5190, J, JTX
1N5415,J,JTX,JTXV
1N5416,J,JTX,JTXV
1N5417,J,JTX,JTXV
1N5418,J,JTX,JTXV
1N5419,J,JTX,JTXV
1N5420, J, JTX, JTXV

2-21
2-21
2-21
2-21

1N5550,
1N5551,
1N5552,
1N5553,

3-43
3-43
3-43

1N5597, J
1N5600, J
1N5603, J

4-11
4-11
4-11
4-11

1N561O, J, JTX, JTXV
1N5611, J, JTX, JTXV
1N5612,J,JTX,JTXV
1N5613, J, JTX, JTXV

J,
J,
J,
J,

JTX,
JTX,
JTX,
JTX.

JTXV
JTXV
JTXV
JTXV

DESCRIPTION
SWITCHING DIODE
200mA; 75V; 00-35
200mA; 70V; 00-35
200mA; 75V; 00-35
200mA; 75V; 00-35
200mA; 75V; 00-35
200mA; 75V; 00-35
200m A; 40V; 00-35
200mA; 40V; 00-35
400mA; 40V; 00-35
200m A; 30V; 00-35
200m A; 75V; 00-35
200mA; 75V; 00-35
ZENER
l.5W; 5%
SWITCHING DIODE
300mA; 80V; 00-35
125mA; lOOV; 00-34
125mA; 75V; 00-34
150mA; 75V; 00-34
400mA; 85V; 00-35
500mA; 85V; 00-35
75mA; 30V; 00-35
ZENER
3.0W; 5%
SWITCHING DIODE
150mA; 200V; 00-35
RECTIFIER
l.OA; 200V
l.OA; 400V
l.OA; 600V
ZENER
5.0W; 5%
3.0W; 5%
5.0W; 5%
RECTIFIER
3.0A; 100V
3.0A; 200V
3.0A; 400V
3.0A; 600V
3.0A; 50V
3.0A; 100V
3.0A; 200V
3.0A; 400V
3.0A; 500V
3.0A; 600V
RECTIFIER
5.0A; 200V
5.0A; 400V
5.0A; 600V
5.0A; 800V
RECTIFIER MODULE
10kV
5.0kV
5.0kV
TRANSIENT VOLTAGE
SUPPRESSOR
33V
43.7V
54V
191V

, Contact Unit rode

t For complete datasheet information contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

1-3

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-

PART NUMBER INDEX

PAGE

PART NUMBER

2-23
2-2S
2-23
2-2S
2-23
2-2S
2-23
2-23

1NS614, J, JTX, JTXV
iNS615, J, JTX, JTXV
1NS616,J,JTX,JTXV
1NS617,J,JTX,JTXV
1NS618,J,JTX,JTXV
1NS619,J,JTX,JTXV
1N5620, J,JTX, JTXV
1NS622,J,JTX,JTXV

6-10

1NS767

2-27
2-31
2-27
2-27
2-31
2-27
2-27
2-31
2-27
2-31
2-27
2-27
2-31
2-27
2-27
2-31
2-27
2-34
2-27
2-27
2-34
2-27
2-27
2-34

1NS802
1NS802, J, JTX, JTXV
1NS803
1NS804
1NS804,J,JTX,JTXV
1NS80S
1NS806
1NS806,J,JTX,JTXV
1N5807
1N5807,J,JTX,JTXV
1N5808
1NS809
1N5809,J,JTX,JTXV
1N5810
1N58ll
1NS8ll, J, JTX, JTXV
1NS812
1NS812,J,JTX,JTXV
1NS813
1NS814
1NS814,J,JTX,JTXV
1NS81S
1NS816
1NS816,J,JTX,JTXV

6-10

1NS9S7

4-9
4-9

1NS968,J,JTX,JTXV
1NS969,J,JTX,JTXV

2-36
2-36

1N6097
1N6098

4-13

1N6102A-1N612SA

2-38
2-38
2-38

1N6304,J,JTX,JTXV
1N6305, J, JTX, JTXV
1N6306, J, JTX, JTXV

2-41
2-43

1N6391, J, JTX, JTXV
1N6392, J, JTX, JTXV

4-16
4-16
4-16
4-16
4-16
4-16
4-16
4-16

1N6461, J, JTX, JTXV
1N6462, J, JTX, JTXV
1N6463, J, JTX, JTXV
1N6464, J, JTX, JTXV
1N646S, J, JTX, JTXV
1N6466, J, JTX, JTXV
1N6467, J, JTX, JTXV
1N6468,J,JTX,JTXV

DESCRIPTION

PAGE

RECTIFIER
l.OA; 200V
l.OA; 200V
l.OA; 400V
l.OA; 400V
l.OA; 600V
l.OA; 600V
l.OA; 800V
l.OA; 1000V
PIN DIODE
General Purpose, PIN
RECTIFIER
2.SA; SOV
2.SA; SOV
2.SA; 75V
2.SA; 100V
2.SA; 100V
2.SA; 12SV
2.SA; lS0V
2.SA; lS0V
6.0A; SOV
6.0A; SOV
6.0A; 7SV
6.0A; 100V
6.0A; 100V
6.0A; 125V
6.0A; lS0V
6.0A; lS0V
20.0A; 50V; 00-4
20.0A; SOY; 00-4
20.0A; 7SV; 00-4
20.0A; 100V; DO-4
20.0A; 100V; 00-4
20.0A; 125V; 00-4
20.0A; lS0V; 00-4
20.0A; lS0V; 00-4
PIN DIODE
Low Distortion, AGC Diode
ZENER
5.0W; S%
S.OW; S%
SCHOITKY RECTIFIER
SOA; 30V; 00-5
SOA; 4OV; 00-5
BIDIRECTIONAL TVS
4000W
RECTIFIER
70A; SOY; 00-5
70A; 100V; OO-S
70A; 150V; OO-S
SCHOITKY RECTIFIER
2SA; 45V; 00-4
60A;4SV; OO-S
TRANSIENT VOLTAGE
SUPPRESSOR
S.OV
6.0V
12.0V
lS.0V
24.0V
30.SV
40.3V
S1.6V

PART NUMBER

2-45

1N6492, JTX, JTXV

2-47
2-47
2-47
2-47
2-47
2-47
2-S3
2-S3
2-S3
2-53
2-S3
2-S3

1N6620
1N6621
1N6622
1N6623
1N6624
1N6625
1N6626
1N6627
1N6628
1N6629
1N6630
1N6631

5-29
5-29
5-29

1N6638, U, JTX, JTXV
1N6642,U,JTX,JTXV
1N6643,U,JTX,JTXV

9-S
9-S
9-5
9-S
9-S

2N1870A,J
2N1871A,J
2N1872A, J
2N1873A
2N1874A,J

*

2N21S0
2N2151, J, JTX

9-9
9-9

2N2323
2N2323, SJ,
SJTX, SJTXV
2N2323A, SJ,
SJTX, SJTXV
2N2324, SJ
SJTX, SJTXV
2N2324A, SJ
SJTX, SJTXV
2N232S
2N232SA
2N2326, SJ
SJTX, SJTXV
2N2326A, SJ,
SJTX,SJTXV
2N2327
2N2327A
2N2328, SJ,
SJTX, SJTXV
'2N2328A, SJ,
SJTX,SJTXV
2N2329, SJ
SJTX, SJTXV

8-7

9-9
9-9
9-9
9-9
9-9
9-9
9-9
9-9
9-9
9-9
9-9
9-9

8-11

2N2880, J, JTX, JTXV

9-12
9-12
9-12
9-12
9-12
9-12

2N3027,
2N3028,
2N3029,
2N3030,
2N3031,
2N3032,

J, JTX
J, JTX
J, JTX
J,JTX
J, JTX
J, JTX

DESCRIPTION
SCHOITKY RECTIFIER
4A, 45V, TO-39
- HV PLUS RECTIFIER
2.0A; 200V; 30nS
2.0A; 400V; 30nS
2.0A; 600V; 30nS
l.5A; 800V; 50nS
l.SA; 900V; SOnS
l.SA; 1000V; 60nS
4.0A; 200V; 30nS
4.0A; 400V; 30nS
4.0A; 600V; 30nS
3.0A; 800V; SOnS
3.0A; 900V; SOnS
2.SA; 1000V; 60nS
SWITCHING DIODES
300mA; lS0V
300m A; 100V
300m A; 75V
SCR
l.25A@100°C !JOV; TO-9
l.2SA@100°C60V; TO-9
l.2SA@100°C 100V; TO-9
l.25A@100°C lS0V; TO-9
l.2SA@100°C 200V; TO-9
POWER TRANSISTOR
NPN; 2.0A; 80V; TO-S9
NPN; 2.0A; 80V; TO-S9
SCR
l.6A@8SoC 50V; TO-39
l.6A@8SoC 50V; TO-39
l.6A@85°C SOY; TO-39
l.6A@8SoC 100V; TO-39
l.6A@8SoC 100V; TO-39
l.6A@8SoC 150V; TO-39
l.6A@85°C 150V; TO-39
l.6A@8SoC 200V; TO-39
l.6A@8SoC 200V; TO-39
l.6A@85°C 250V; TO-39
l.6A@85°C 250V; TO-39
l.6A@85°C 300V; TO-39
1.6A@8SoC 300V; TO-39
1.6A@8soC400V; TO-39
POWER TRANSISTOR
NPN; SA; 80V; TO-S9
SCR
SOOmA@lOO°C 30V; TO-18
SOOmA@100°C60V;TO-18
SOOmA@lOO°C 100V; TO-18
500mA@100°C30V; TO-18
SOOmA@100°C60V; TO-18
SOOmA@lOO°C lO~Y; TO-18

* Contact Unitrode

t For complete datasheet information contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404. FAX (617) 924-1235

1-4

PRINTED IN U S.A

PART NUMBER INDEX

PAGE

DESCRIPTION

PART NUMBER

PAGE

FULL WAVE BRIDGE

POWER TRANSISTOR
8·15
8·15
8·15
8·15
8·11
8·19
8·19
8·19
8·19
8·23
8·27
8·27
8·27
8·27
8·32
8·32
8·32
8·32

2N3418,J,JTX,JTXV
2N3419, J, JTX, JTXV
2N3420, J,JTX, JTXV
2N3421,J,JTX,JTXV
2N3749,J,JTX,JTXV
2N3996, J, JTX, JTXV
2N3997, J, JTX, JTXV
2N3998,J,JTX,JTXV
2N3999,J,JTX,JTXV
2N4150,J,JTX,JTXV
2N5660, J,JTX, JTXV
2N5661, J, JTX, JTXV
2N5662,J,JTX,JTXV
2N5663,J,JTX,JTXV
2N5664, J, JTX, JTXV
2N5665, J, JTX, JTXV
2N5666,J,JTX,JTXV
2N5667, J, JTX, JTXV

9·18
9·18
9·18
9·18
9·18

2N5724
2N5725
2N5726
2N5727
2N5728

NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;
NPN;

3.0A; 60V; TO·5
3.0A; 80V; TO·5
3.0A; 60V; TO·5
3.0A; 80V; TO·5
5.0A; 80V; TO·111
5.0A; 80V; TO·111
5.0A; 80V; TO·1ll
5.0A; 80V; TO·59
5.0A; 80V; TO·59
1O.OA; 70V; TO·5
3A; 200V; TO·66
3A; 300V; TO·66
3A; 200V; TO·5
3A; 300V; TO·5
5A; 200V; TO·66
5A; 300V; TO·66
5A; 200V; TO·5
5A; 300V; TO·5

SCR
l.6A@85°C 60V; TO·39
l.6A@85°C 100V; TO·39
l.6A@85°C 200V; TO·39
l.6A@85°C300V; TO·39
l.6A@85°C 400V; TO·39

2N6119
2N6120
2N6137

8·37
8·37
8·37
8·37

2N6350, J, JTX, JTXV
2N6351, J, JTX, JTXV
2N6352,J,JTX,JTXV
2N6353, J, JTX, JTXV

3·12
3·12
3·12
3·14
3·14
3·14
3·16
3·16
3·16
3·16
3·16
3·16
3·18
3·18
3·18
3·18
3·18
3·18
3·18
3·18
3·16
3·16
3·16
3·16
3·16
3·16
3·18
3·18
3·18
3·18
3·18

469·1, J, JTX
469·2, J, JTX
469·3, J, JTX
483·1, JTX
483·2, JTX
483·3, JTX
673·1
673·2
673·3
673·4
673·5
673·6
673·7
673·7.5

400mW@25°C 40V; TO·18
400mW@25°C40V; TO·18
300mW@25°C40V; TO·18

POWER DARLINGTON
NPN;
NPN;
NPN;
NPN;

673~

673·8.5
673·9
673·10
673·11
673·12
676·1
676·2
676·3
676·4
676·5
676·6
676·12
676-18
676·24
676·30
676·36

676·42
676·48
676·50
678·1
678·2
678·3
678·4
678·5
678·6
679·1
679·2
679·3
679·4
679·5
679·6
680·1
680·2
680·3
680·4
680·5
680·6

3·27
3·27
3·27
3·27
3·27
3·27

681·1
681·2
681·3
681·4
681·5
681·6

3·21
3·21
3·21
3·21
3·21
3·21
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24

682·1
682·2
682·3
682·4
682·5
682·6
683·1
683·2
683·3
683·4
683·5
683·6
684·1
684·2
684·3
684·4
684·5
684·6

3·29
3·29
3·29
3·29
3·29
3·29

688·10
688·12
688·15
688·18
688·20
688·25

3·27
3·27
3·27
3·27
3·27
3·27

689·1
689·2
689·3
689·4
689·5
689·6

1 ph; .15A; 4200V
1 ph; .135A; 4800V
1 ph; .125A; 5000V
3 ph; 25A; lOOV
3 ph; 25A; 200V
3 ph; 25A; 300V
3 ph; 25A; 400V
3 ph; 25A; 500V
3 ph; 25A; 600V
1 ph; 25A; 100V
1 ph; 25A; 200V
1 ph; 25A; 300V
1 ph; 25A; 400V
1 ph; 25A; 500V
1 ph; 25A; 600V
1 ph; lOA; 100V
1 ph; lOA; 200V
1 ph; lOA; 300V
1 ph; lOA; 400V
1 ph; lOA; 500V
1 ph; lOA; 600V
DOUBLER OR
15A; 100V
15A;200V
15A;300V
15A;400V
15A;500V
15A;600V

FULL WAVE BRIDGE

10.0A; 80V; TO·33
1O.OA; 150V; TO·33
1O.OA; 80V; TO·66
1O.OA; 150V; TO·66

FULL WAVE BRIDGE
1 ph;
1 ph;
1 ph;
3 ph;
3 ph;
3 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;

3·18
3·18
3·18
3·21
3·21
3·21
3·21
3·21
3·21
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24
3·24

CENTER·TAP

PUT
9·22
9·22
9·26

DESCRIPTION

PART NUMBER

lOA; 200V
lOA; 400V
lOA; 600V
25.0A; 200V
25.0A; 400V
25.0A; 600V
l.5A; 100V
l.5A; 200V
l.5A; 300V
l.5A; 400V
1.5A; 500V
1.5A; 600V
0.6A; 1200V
0.5A; 1800V
O.4A; 2400V
0.3A; 3000V
0.2A; 3600V
.18A; 4200V
.16A; 4800V
.16A; 5000V
l.OA; 100V
l.OA; 200V
l.OA; 300V
l.OA; 400V
l.OA; 500V
l.OA; 600V
O.4A; 1200V
.35A; 1800V
.325A; 2400V
.25A; 3000V
.175A; 3600V

3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
3 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;
1 ph;

20A;lOOV
20A; 200V
20A; 300V
20A; 400V
20A; 500V
20A; 600V
20A; lOOV
20A; 200V
20A; 300V
20A; 400V
20A; 500V
20A; 600V
lOA; 100V
lOA; 200V
lOA; 300V
lOA; 400V
lOA; 500V
lOA; 600V

RECTIFIER MODULE
10kV
12kV
15kV
18kV
20kV
25kV
DOUBLER OR

CENTER·TAP
15A;100V
15A;200V
15A;300V
15A;400V
15A; 500V
15A;600V

• Contact Unitrode
t For complete datasheet information contact Unitrode
legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

1·5

PRINTED IN U.S.A.

III

PART NUMBER INDEX

PAGE

3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-21
3-31
3-31
3-31
3-31
3-31
3-31
3-31
3-31
3-31
3-31
3-31
3-31
3-33
3-33
3-33
3-33
3-33
3-33
3-33
3-33
3-33
3-33
3-33
3-33
3-35
3-35
3-35
3-35
3-35
3-35
3-35
3-35
3-38
3-38
3-38
3-38
3-38
3-38
3-38
3-38

>:<

t

PART NUMBER

695-1
695-2
695-3
695-4
695-5
695-6
696-1
696-2
696-3
696-4
696-5
696-6
697-1
697-2
697-3
697-4
697-5
697-6
698-1
698-2
698-3
698-4
698-5
698-6
700-1
700-2
700-3
700-4
700-5
. 700-6
701-1
701-2
701-3
701-4
701-5
701-6
800-1
800-2
800-3
800-4
801-1
801-2
801-3
801-4
802-1
802-2
802-3
802-4
803-1
803-2
803-3
803-4

3-41
3-41
3-41
3-41

804-1
804-2
804-3
804-4

9-30
9-30
9-30
9-30
9-30
9-30

AAlOO
AAlOl
AA102
AA103
AA104
AA107

DESCRIPTION

PAGE

FULL WAVE BRIDGE
3 ph; 15A; 100V
3 ph; 15A; 200V
3 ph; 15A; 300V
3 ph; 15A; 400V
3 ph; 15A; 500V
3 ph; 15A; 600V
3 ph; 15A; 100V
3 ph; 15A; 200V
3 ph; 15A; 300V
3 ph; 15A; 400V
3 ph; 15A; 500V
3 ph; 15A; 600V
1 ph; 2.5A; 100V
1 ph; 2.5A; 200V
1 ph; 2.5A; 300V
1 ph; 2.5A; 400V
1 ph; 2.5A; 500V
1 ph; 2.5A; 600V
1 ph; 2.25A; 100V
1 ph; 2.25A; 200V
1 ph; 2.25A; 300V
1 ph; 2.25A; 400V
1 ph; 2.25A; 500V
1 ph; 2.25A; 600V
3 ph; 2.5A; 100V
3 ph; 2.5A; 200V
3 ph; 2.5A; 300V
3 ph; 2.5A; 400V
3 ph; 2.5A; 500V
3 ph; 2.5A; 600V
3 ph; 2.25A; 100V
3 ph; 2.25A; 200V
3 ph; 2.25A; 300V
3 ph; 2.25A; 400V
3 ph; 2.25A; 500V
3 ph; 2.25A; 600V
3 ph; 40A; 50V
3 ph; 40A; 100V
3 ph; 40A; 125V
3 ph; 40A; 150V
3 ph; 20A; 50V
3 ph; 20A; 100V
3 ph; 20A; 125V
3 ph; 20A; 150V
1 ph; 35A; 50V
1 ph; 35A; 100V
1 ph; 35A; 125V
1 ph; 35A; 150V
1 ph; 20A; 50V
1 ph; 20A; 100V
1 ph; 20A; 125V
1 ph; 20A; 150V
DOUBLER OR
CENTER-TAP
20A; 50V
20A; 100V
20A; 125V
20A; 150V
SCR
0.5A@100°C 60V; TO-IS
0.5A@100°C 100V; TO-IS
0.5A@100oe200V; TO-18
0.5A@100oe300V; TO-18
0.5A@100°C400V; TO-IS
0.5A@100°C60V; TO-IS

9-30
9-30
9-30
9-30
9-30
9-30
9-30
9-30
9-30
9-33
9-33
9-33
9-33
9-33
9-33
9-33
9-33
9-33
9-33
9-33
9-33
9-33
9-33
9-33

*
*
*
*
.,*

.,

*
*
*
*

"
*
*

*

"
*
*

5-32
5-32
5-32
5-32

*
5-32
5-32
5-33
~,
~,

~,

*
*

*
*
*
*
*

*
:1<

5-33
5-33
5-33

PART NUMBER

AAl08
AA109
AAUO
AAUI
AAU4
AAU5
AAU6
AAU7
AAU8
ADlOO
ADlOl
AD102
AD103
ADI04
ADI07
ADI08
AD109
ADIlO
ADIll
ADIl4
ADIl5
ADIl6
ADIl7
ADIl8
BA127D
BA129
BA130
BA155
BA166
BA167W
BA180
BA181
BA209
BA219
BA220
BA221
BA317
BAVlO
BAV18
BAV19
BAV20
BAV21
BAW24
BAW25
BAW26
BAW27
BAW62
BAW75
BAW76
BAX12
BAX13
BAX16
BAX17
BAX81
BAX84
BAX92
BAYlS
BAYl9
BAY20
BAY21
BAY31
BAY36
BAY41
BAY42
BAY43

DESCRIPTION
SCR
0.5A@100oe 100V; TO-18
0.5A@100oe 200V; TO-18
0.5A@100oe 300V; TO-18
0.5A@100oe 400V; TO-18
0.5A@100oe 60V; TO-18
0.5A@100°C 100V; TO-18
0.5A@100°C 200V; TO-18
0.5A@100°C 300V; TO-18
0.5A@100°C400V; TO-18
1.6A@85°C 60V; TO-39
1.6A@85°C lO~Y; TO-39
1.6A@85°C 200V; TO-39
1.6A@85°C 300V; TO-39
1.6A@85°C400V; TO-39
1.6A@85°C 60V; TO-39
1.6A@85°C 100V; TO-39
1.6A@85°e 200V; TO-39
1.6A@85°e 300V; TO-39
1.6A@85°e 400V; TO-39
1.6A@85°e 60V; TO-39
1.6A@85°e 100V; TO-39
1.6A@85°e 200V; TO-39
1.6A@85°e 300V; TO-39
1.6A@85°C 400V; TO-39
DIODE
200mA; 100V; DO-35
225mA; 200V; DO-35
75mA; 35V; DO-35
100mA; 150V; DO-35
50mA; 20V; DO-35
50mA; 25V; DO-35
50mA; lOY; DO-35
50mA; 20V; DO-35
225mA; 100V; DO-35
100mA; 100V; DO-35
200mA; lOY; DO-35
200mA; 30V; DO-35
100mA; 30V; DO-35
300mA; 60V; DO-35
250mA; 60V; DO-35
250mA; 120V; DO-35
250mA; 180V; DO-35
250m A; 250V; DO-35
600mA; 50V; DO-35
600mA; 50V; DO-35
600mA; 75V; DO-35
600mA; 75V; DO-35
100mA; 75V; DO-35
300m A; 35V; DO-35
300m A; 75V; DO-35
400mA; 90V; DO-35
75mA; 50V; DO-35
200mA; 150V; DO-35
200mA; 200V; DO-35
350mA; 90V; DO-35
75mA; 50V; DO-35
75mA; 50V; DO-35
250mA; 60V; DO-35
250mA; 120V; DO-35
250mA; 180V; DO-35
250mA; 350V; DO-35
15V; DO-35
100m A; 30V; DO-35
225m A; 40V; DO-35
225mA; 60V; DO-35
225mA; SOV; DO-35

Contact Unitrode
For complete data sheet information contact Unit rode
Legend: J-JAN JTX-JANTX JTXV-JANTXV

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA 02172
TEL. (617) 926-0404. FAX (617) 924-1235

1-6

PRINTED IN u.s A

PART NUMBER INDEX
PAGE

•
•
*

··
·
·
··
··
··
···
··

5-33

*

*

2-87
2-87
2-87
2-92
2-92
2-92

•
•

·

BAY44
BAY45
BAY46
BAY60
BAY71
BAY72
BAY73
BAY80
BY401
BY402
BY403
BY404
BYS60-45
BYS75-20
BYS75-30
BYS75-45
BYV19-35
BYV19-40
BYV19-45
BYV23-351'
BYV23-451'
BYV27-50 (UESll01)
BYV27-100(UESll02)
BYV27-150(UES1103)
BYV28-50
BYV28-100
BYV28-150
BYV33-35
BYV33-40
BYV33-45

2-97
2-97
2-97
2-97
2-74
2-74
2-74
2-74
2-74
2-74
2-80
2-80
2-80
2-97
2-97
2-97
2-97

BYW29-50
BYW29-100
BYW29-150
BYW29-200
BYW31-50
BYW31-100
BYW31-150
BYW77-50
BYW77-100
BYW77-150
BYW78-50
BYW78-100
BYW78-150
BYW80-50
BYW80-100
BYW80-150
BYW80-200
BYW8l-50
BYW81-100
BYW81-150
BYW81-200

4-18

EPS5 Series

9-36
9-36
9-36
9-40
9-40

GA100
GAlOI
GAI02
GA200-GA200A
GA201-GA201A

···
·

DESCRIPTION

PART NUMBER

DIODE
250mA; 50V; 00-35
250m A; 150V; 00-35
250mA; 300V; 00-35
115mA; 25V; 00-35
75mA; 70V; 00-35
225m A; 125V; 00-35
225mA; 125V; 00-35
250mA; 150V; 00-35
DIODE
500mA; 50V; 00-7
500mA; 100V; 00-7
500mA; 200V; 00-7
500mA; 400V; 00-7
SCHOITKY RECTIFIER
60A; 45V; 00-5
75A; 20V; 00-5
75A; 30V; 00-5
75A; 45V; 00-5
12A; 35V; TO-220AC
12A; 4OV; TO-220AC
12A; 45V; TO-220AC
75A; 35V; 00-5
75A; 45V; 00-5
RECTIFIER
2.5A; 50V
2.5A; 100V
2.5A; 150V
3.5A; 50V
3.5A; 100V
3.5A; 150V
SCHOITKY RECTIFIER
16A; 35V; TO-220AB
16A; 4OV; TO-220AB
16A; 45V; TO-220AB
RECTIFIER
7.0A; 50V; TO-220AC
7.0A; 100V; TO-220AC
7.0A; 150V; TO-220AC
7.0A; 200V; TO-220AC
25A; 50V; 00-4
25A; 100V; 00-4
25A; 150V; 00-4
30A; 50V; 00-4
30A; 100V; 00-4
30A; 150V; 00-4
50A; 50V; 00-.5
50A; 100V; 00-5'
50A; 150V; 00-5
7.0A; 50V; TO-220AC
7.0A; 100V; TO-220AC
7.0A; 150V; TO-220AC
7.0A; 200V; TO-220AC
25A; 50V; 00-4
25A; 100V; 00-4
25A; 150V; 00-4
25A; 150V; 00-4
BI-DIRECTIONAL TVS
lOOOW
SCR
400mA@100·C 30V; TO-18
4OOmA@l00·C60V; TO-18
4OOmA@100·C80V;TO-18
6OV;TO-18
lOOV;TO-18

PAGE

PART NUMBER

9-43
9-43
9-40
9-40
9-43
9-43
9-46
9-46
9-46
9-46
9-46
9-46
9-46
9-49
9-49
9-49
9-49
9-49
9-49

GA300-GA300A
GA301-GA301A
GB200-GB200A
GB201-GB201A
GB300-GB300A
GB301-GB301A
10100
10101
10102
10103
10104
10105
10106
10200
10201
10202
10203
10300
10301

7-4
7-4
7-4
7-4
7-4
7-4
7-8
7-8
7-8
7-8
7-8
7-8
7-12
7-12
7-12
7-12
7-12
7-12
7-16
7-16
7-16
7-16
7-16
7-16

PIC600
PIC601
PIC602
PIC610
PIC611
PIC612
PIC625
PIC626
PIC627
PIC635
PIC636
PIC637
PIC645
PIC646
PIC647
PIC655
PIC656
PIC657
PIC660
PIC661
PIC662
PIC670
PIC671
PIC672

7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-29
7-29
7-29
7-29
7-29
7-29..

PIC7501
PIC7502
PIC7503
PIC7504
PIC7505
PIC7506
PIC7507
PIC7508
PIC7509
PIC7510
PIC7511
PIC7512
PIC7513
PIC7514
PIC7515
PIC7516
PIC7517
PIC7518

DESCRIPTION
SCR
60V; TO-18
100V; TO-18
60V; TO-59
100V;TO-59
60V;TO-59
100V; TO-59
0_5A@100·C30V;TO-18
0.5A@100·C 6OV; TO-18
0.5A@100·C 100V; TO-18
0.5A@100·C 150V; TO-18
0.5A@100·C 200V; TO-18
0.5A@100·C 300V; TO-18
0.5A@100·C400V; TO-18
1.6A@70·C50V;TO-39
1.6A@70·C 100V; TO-39
1.6A@70·C 150V; TO-39
1.6A@70·C200V;TO-39
1.6A@70·C300V;TO-39
1.6A@70·C400V; TO-39
POWER HYBRID
5.0A; 60V (Pas.); TO-66
5.0A; 80V (Pas.); TO-66
5.0A; 100V (Pas.); TO-66
5.0A; 60V (Neg.); TO-66
5.0A; 80V (Neg.); TO-66
5.0A; 100V (Neg.); TO-66
15.0A; 60V (Pas.); TO-66
15.0A; 80V (Pas.); TO-66
15.0A; 100V (Pas.); TO-66
15.0A; 60V (Neg.); TO-66
15.0A; 80V (Neg.); TO-66
15.0A; l00V (Neg.); TO-66
15.0A; 60V (Pas.); TO-3
15.0A; 80V (Pas.); TO-3
15.0A; 100V (Pas.); TO-3
15.0A; 60V (Neg.); TO-3
15.0A; 80V (Neg.); TO-3
15.0A; 100V (Neg.); TO-3
10.0A; 60V (Pas.); TO-66
1O.OA; 80V (Pas.); TO-66
10.0A; 100V (Pas.); TO-66
1O.OA; 60V (Neg.); TO-66
1O.0A; 80V (Neg.); TO-66
10.0A; 100V (Neg.); TO-66
SCREENED POWER
HYBRIDS
5.0A; 60V (Pas.); TO-66
5.0A; 80V (Pas.); TO-66
5.0A; 100V (Pas.); TO-66
5.0A; 60V (Neg.); TO-66
5.0A; 80V (Neg.); TO-66
5.0A; 100V (Neg.); TO-66
15.0A; 60V (Pas.); TO-66
15_0A; 80V (Pas.); TO-66
15.0A; 100V (Pas.); TO-66
15.0A; 60V (Neg,); TO-66
15.0A; 80V (Neg.); TO-66
15.0A; 100V (Neg.); TO-66
15.0A; 60V (Pas.); TO-3
15.0A; 80V (Pas.); TO-3
15.0A; 100V (Pas.); TO-3
15.0A; 60V (Neg.); TO-3
15.0A; 80V (Neg.); TO-3
15.0A; 100V(Neg.); TO-3,

• Contact Unitrode

t For complete datasheet information contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

1-7

PRINTED IN U.S.A.

..

PART NUMBER INDEX

PAGE

PART NUMBER

7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-29
7-29
7-29
7-29
7-29
7-29
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20
7-20

PIC7519
PIC7S20
PIC7521
PIC7522
PIC7S23
PIC7524
PIC7S25
PIC7S26
PIC7S27
PIC7528
PIC7529
PIC7530
PIC7531
PIC7532
PIC7533
PIC7534
PIC7535
PIC7536
PIC7555
PIC7556
PIC7557
PIC7558
PIC7559
PIC7560
PIC7561
PIC7562
PIC7563
PIC7564
PIC7565
PIC7566

10-4
10-4

RTH22ES
RTH42ES

2-59
2-61
2-61

5DS1
50241
SD241HR2

3-46
3-46
3-46
3-46

5PA2S, J
5PB2S, J
5PC2S, J
5P02S, J

10-4

TG 1/8

10-4

TM 114 MI L-T-2364SA

10-4

TM 118 MIL-T-2364SA

4-20
4-20
4-20

TVS30S-TVS360
TVS41O-TVS430
TVSSOS-TVSS2S

9-51
9-S1

U13T1
U13T2

S-41
S-41
S-41
S-41

U2TlOl
U2Tl05
U2T20l
U2T20S

DESCRIPTION

PAGE

SCREENED POWER
HYBRIDS
S.OA; 60V (Pas.); TO-66
S.OA; 80V (Pas.); TO-66
S.OA; 100V (Pas.); TO-66
5.0A; 60V (Neg.); TO-66
S.OA; 80V (Neg.); TO-66
S.OA; 100V (Neg.); TO-66
15.0A; 60V (Pas.); TO-66
15.0A; 80V (Pas.); TO-66
lS.0A; 100V (Pas.); TO-66
15.0A; 60V (Neg.); TO-66
15.0A; 80V (Neg.): TO-66
15.0A: 100V (Neg.): TO-66
15.0A; 60V (Pos.); TO-3
15.0A; 80V (Pas.); TO-3
lS.0A; 100V (Pas.); TO-3
15.0A; 60V (Neg.); TO-3
15.0A; 80V (Neg.); TO-3
l5.0A; 100V (Neg.); TO-3
1O.OA; 60V (Pas.); TO-66
1O.OA; 80V (Pas.); TO-66
1O.OA; 100V (Pas.); TO-66
lO_OA; 60V (Neg.); TO-66
1O.OA; 80V (Neg.); TO-66
1O.OA; 100V (Neg.); TO-66
1O.OA; 60V (Pas.); TO-66
1O.0A: 80V (Pas.); TO-66
1O.OA; 100V (Pas.); TO-66
1O.OA; 60V (Neg.); TO-66
100A: 80V (Neg.); TO-66
1O.OA; 100V (Neg.). TO-66
SENSISTOR
Hermetic 1/8 W, Post. Temp.
Coefficient Thermistor
SCHOTIKY RECTIFIER
60A; 4SV; 00-5
60A; 4SV; TO-3
60A; 45V; TO-3
FULL WAVE BRIDGE
1 ph; 2SA; 100V
1 ph; 2SA; 200V
1 ph; 2SA: 400V
1 ph; 2SA: 600V
SENSISTOR@
Hermetic lI8W, Pas. Temp.
Coefficient Thermistor
Plastic 114W, Pas. Temp.
Coefficient Thermistor
Plastic 1ISW, Pas. Temp.
Coefficient Thermistor
TRANSIENT VOLTAGE
SUPPRESSOR
lS0W
lS0W
SOOW
PUT
400mW@2SoC40V: TO-IS
400mW@25°C40V; TO-IS
POWER DARLINGTON
NPN; 1O.OA: SOV; TO-33
NPN; 10_0A; lS0V; TO-33
NPN; 1O.OA; 80V; TO-66
NPN; 1O.OA; lS0V; TO-66

PART NUMBER

8-43
8-43
8-43
8-43
8-4S
8-4S
8-4S

U2T301
U2T30S
U2T401
U2T405
U2TAS06
U2TA508
U2TASlO

2-63
2-68

UBS421
UBS430

8-47

UBT430

3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48
3-48

UDA5
UDA7.5
UDAIO
UDAl5
UDB2.5
UDBS
UDB7.5
UDCS
UDC7.S
UDC10
UDC1S
UDD2.5
UDD5
UDD7.5
UDE2.5
UDE5
UDF2.S
UDF5

4-24
4-24
4-24
4-24
4-24
4-24

UDZl07-UDZ760
UDZ807-UDZ860
UDZ5707-UDZ5760
UDZS807-UDZ5860
UDZS707-UDZ8760
UDZSS07-UDZS860

2-74
2-74
2-74
2-77
2-77
2-77
2-77
2-77
2-77
2-S0
2-80
2-S0
2-S2
2-S2
2-S2
2-S2
2-S2
2-S2
2-SS
2-S5
2-SS
2-87
2-87

UES70l
UES702
UES703
UE5704
UES704HR2
UES70S
UES70SHR2
UES706
UES706HR2
UESSOl
UESS02
UESS03
UESS04
UESS04HR2
UES805
UESS05HR2
UESS06
UESS06HR2
UESlOOl
UESlO02
UESlO03
UESllOl
UESll02

DESCRIPTION
POWER DARLINGTON
NPN; 5.0A; 60V; TO-33
NPN; S.OA; lS0V; TO-33
NPN; S.OA; 60V; TO-66
NPN; 5.0A; lS0V; TO-66
NPN; 3.0A; 60V; TO-92
NPN; 3.0A; 80V; TO-92
NPN; 3.0A; 100V; TO-92
SYNCHRONOUS
RECTIFIER
NPN; 20A; 50V; TO-220
NPN; 40A; 50V; TO-3
LOW VOLTAGE
TRANSISTOR
NPN; 40A; 50V; TO-3
RECTIFIER MODULE
5_0kV
7.5kV
lOkV
15kV
2.5kV
5.0kV
7.5kV
5.0kV
7.5kV
lOkV
lSkV
2.5kV
S.OkV
7.SkV
2.SkV
5.0kV
2.5kV
5.0kV
ZENER
Bidirectional 3W; 5%
Bidirectional 3W; 10%
Bidirectional 5W; 5%
Bidirectional 5W; 10%
Bidirectional 1W; 5%
Bidirectional 1W; 10%
RECTIFIER
25.0A; 50V; 00-4
250A; 100V; 00-4
25.0A; lS0V; 00-4
20.0A; 200V; 00-4
20.0A; 200V; 00-4
20.0A; 300V; 00-4
20.0A: 300V: 00-4
20.0A; 400V; 00-4
20.0A; 400V; 00-4
70_aA; 50Y; 00-5
lO.OA; lO~Y; 00-5
70.0A: lS0V; 00-5
SO.OA; 200V; OO-S
SO.OA; 200V; 00-5
SO.OA; 300V; 00-5
SO.OA; 300V; 00-5
50.0A: 400V: 00-5
SO.OA; 400V; DO-S
lA: SOV
lA: lOOV
1A; lSOV
2.SA; SOV
2.5A: lOOV

Contact Unit rode

t For complete data sheet information contact UnitrodE!
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

1-8

PRINTED I"J U S.h

PART NUMBER INDEX'

PAGE

PART NUMBER

2·87
2·89
2·89
2·89
2·92
2·92
2·92
2-94
2-94
2-94
2-97
2-97
2-97
2-97
2·100
2·100
2·100
2·100
2·103
2·103
2·103
2·103
2·106
2·106
2·106
2-106
2·106
2·106
2·109
2·109
2·109
2·109
2·109
2·109
2·112
2·114
2·112
2·114
2·112
2·114
2·116
2·118
2·116
2·118
2·116
2·118

UES1103
UES1104
UES1105
UESll06
UES1301
UES1302
UES1303
UES1304
UE5-1305
UES1306
UESl401
UES1402
UESl403
UES1404
UES1501
UES1502
UES1503
UES1504
UES2401
UES2402
UES2403
UES2404
UES2601
UES2601HR2
UES2602
UES2602HR2
UES2603
UES2603HR2
UES2604
UES2604HR2
UES2605
UES2605HR2
UES2606
UES2606HR2
UES3005C
UES3005S
UES3010C
UES3010S
UES3015C
UES3015S
UES4505C
UES4505S
UES4510C
UES4510S
UES4515C
UES4515S

3·51
3·51
3-51
3·51
3·51
3-51
3·54
3·54
3·54
3-54
3-54
3·54
3-54
3·54

UfB2.5
UFB5
UFB7.5
UFS5
UFS7.5
UFSlO
UGB5
UGB7.5
UGB10
UGD5
UGD7.5
UGD10
UGE2.5
UGE5

DESCR1PTION

PAGE

RECTIFIER
2.5A; 150V
2.0A; 200V
2.0A; 300V
2.0A; 400V
6.0A; 50V
6.0A; 100V
6.0A; 150V
5.0A; 200V
5.0A; 300V
5.0A; 400V
8.0A; 50V; TO·220AC
ROA; 100V; TO·220AC
8.0A; 150V; TO·220AC
8.0A; 200V; TO·220AC
16A; 50V; TO·220AC
16A; 100V;TO·220AC
16A; 150V; TO·220AC
16A;200V;TO·220AC
16A; 50V; TO·220AB
16A; 100V; TO·220AB
16A; 150V;TO·220AB
16A; 200V; TO·220AB
30A; 50V; TO·3
30A; 50V; TO·3
30A; 100V; TO·3
30A; 100V; TO·3
30A; 150V; TO·3
30A; 150V; TO·3
30A; 200V; TO·3
30A; 2OOV; TO·3
30A; 3OOV; TO·3
30A; 3OOV; TO·3
30A; 4OOV; TO·3
30A; 4OOV; TO·3
30A; 50V; TO·3P; Center·Tap
30A; 50V; TO·3P
30A; 1OOV; TO·3P; Center·Tap
30A; 1OOV; TO·3P
30A; 150V; TO·3P; Center·Tap
30A; 150V; TO·3P
45A; 50V; TO·3P; Center·Tap
45A; 50V; TO·3P
45A; 100V; TO·3P; Center-Tap
45A; 100V; TO·3P
45A; 150V; TO·3P; Center·Tap
45A; 150V; TO·3P
RECTIFIER MODULE
2.5kV
5.0kV
7.5kV
5.0kV
7.5kV
10kV
5.0kV
7.5kV
lOkV
5.0kV
7.5kV
10kV
2.5kV
5.0kV

PART NUMBER:

3·54
3·54
3·54
3·54

UGE7.5
UGF2.5
UGF5
UGF7.5

2·120
2·120
2·120
2·120
2·120
2-120
2·125
2·125
2·125
2,125
2-125
2·125

UHVP202
UHVP204
UHVP206
UHVP208
UHVP209
UHVP210
UHVP402
UHVP404
UHVP406
UHVP408
UHVP409
UHVP410

6·13
6·16
6·13
6·20
6·20
6·20
6;24
6·24
6·24
6·16
6·28
6·31
6·31
6·31
6·35
6·37
6·47

UM4O()() series
UM4300 series
UM4900 series
UM6000 series
UM6200 series
UM6600 series
UM7000 series
UM7100 series
UM7200 series
UM7300 series
UM9301
UM9401
UM9402
UM9415
UM9441
UM9601·UM9608
UM9701

8-51
8·51
8-51
8-51

UPTB520
UPTB530.
UPTB540
UPTB550

2·130
2·130
2·130
2·130
2·130
2·130
2·130
2·130
2·130
2·130

UR105
URllO
UR1l5
·UR120
UR125
UR205
UR210
UR215
UR220
UR225

3-57
3-57
3·57
3-57
3-57
3-57
3-57
3-57
3-57
3·57
3·57
3·57

US12
US15
US1S
US20
US25
US30
US35
US40
US45A
US50A
US60A
US70A

DESCRIPTION
RECTIFIER MODULE
7.5kV
2.5kV
5.0kV
7.5kV
HV PLUS RECTIFIERS
2.0A; 200V; 30nS
2.0A; 400V; 30nS
2.0A; 600V; 30nS
1. 5A; 800V; 50n 5
1.5A; 900V; 50nS
1.5A; 1000V; 65nS
4.0A; 200V; 30nS
4.0A; 400V; 30nS
4.0A; 600V; 30nS
3.0A; 800V; 50nS
3.0A; 900V; 50nS
2.5A; 1OO0V'; 65nS
PIN DIODE
0.5Q; 3.0pF; 25W; 1OO·1200V
1.5Q; 2.2pF; 18W; 100·loo0V
0.5Q; 3.0pF; 37W;' 100·6OOV
1.7Q; 0.5pF; 6W; 1oo·loo0V
O.4Q; LlpF; 6W; 1OO·400V
2.5Q; 0.4pF; 4W; 100·1000V
1.0Q; 0.9pF; lOW; 100·1600V
0.6Q; 1.2pF; lOW; 1OO·800V
0.25Q; 2.2pF; lOW; 100·400V
3.5Q; 0.7pF; 7.5W; 1oo·loo0V
CATV Attenuator Diodes
2·Way Radio Switch Diodes
2·Way Radio Switch Diodes
2-Way Radio Switch Diodes
Radiation Detector
Microstrip PIN
Low Rs Antenna Switch .
POWER TRANSISTOR
NPN; O.lA; 200V; TO·92
NPN; O.lA; 300V; TO·92
NPN; O.lA; 400V;TO·92
NPN; O.lA; 500V; TO·92
RECTIFIER
2.0A; 50V
LOA; 100V
LOA; 150V
LOA; 200V
. l.OA; 250V
2.0A; 50V
2.0A; 100V
2.0A; 150V
2.0A; 200V
2.0A; 250V
RECTIFIER MODULE
l.2kV
1.5kV
1.SkV
2.0kV
2.5kV
3.0kV
3.5kV
4.0kV
4.5kV
5.0kV
6.0kV
7.0kV

• Contact Unitrode

t For complete datasheet information contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL (617) 926·0404 • FAX (617) 924·1235

1-9

PRINTED IN U S.A.

-

PART NUMBER INDEX

PAGE

. PART NUMBER

DESCRIPTION

PAGE

. PART NUMBER

RECTIFIER MODULE
3-57
3-57
3-57
3-57
3-57
3-57
3-51
3-51
3-51
3-51

US80A
US100A
US120A
US150A
US180A
US200A
USB2.5
USB5
USB7.5
USB10

8.0kV
10kV
12kV
15kV
18kV
20kV
2.5kV
5.0kV
7.5kV
10kV

SCHOTTKY RECTIFIER
2-132
2-132
2-132
2'132
2-135
'2-135
2~135

2-135
2-137
2-137
2-137
2-137
2-139
2-141
2-139
2-141
2-139
2-141
2-139
'2-141
2~143

2-145
2-143
2-145
2-143
2-145
2-143
2-145
2-147
2;147
2-147
2-147
2-149
2-149
2-149
2-149
2-151
2-153
2-151
·2-153
.2-151
2'153
2-155
2-157
2-155
2'157
2-155 .
2-157

..

2-159
2-159

US0245C
US0245CHR2
US0245CR
US0245CRHR2
US0335C
USD335CHR2
US0345C
US0345CHR2
US0520
US0535
US0545
US05SO
US0635
US0635C
US0640
US0640C
US0645
US0645C
.oS0650
US0650C
US0735
'US0735C
US0740
US0740C
US0745
US0745C
US0750 .
US0750C
US0835
USb840
US0845
US0850
US0935
US0940
US0945
US0950
US03030C
US03030S
USD3040C
US03040S
.oSD3045C
US03045S
USD4530C
US04530S
USD4540C
USD4540S
U5D4545C
U5D4545S
USD6035
USD6045
• USD7520
USD7525

DESCRIPTION
RECTIFIER MODULE

3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-57
3-51
3-51
3-51
3-51

4A; 45V; TO·39; Center-Tap
4A; 45V; TO<39;.Center-Tap
4A; 45V; TO-39; Center-Tap
4A; 45V; TO-39; Center-Tap
30A; 35V; TO-3
30A; 35V; TO-3
3OA; 45V; TO-3
30A; 45V; TO-3
75A; 20V; 00-5
75A; 35V; 00-5
2-161
75A; 45V; 00-5
2-161
75A; 50V; 00-5
2-161
6A; 35V; TO-220AC
2-161
12A; 35V; TO-220AB
2-161
6A; 4OV; TO-220AC
2-161
12A; 40V; TO-220AB
6A; 45V; TO-220AC
2-161
2-161
12A; 45V; TO-220AB
2-161
6A; 50V; TO-220AC
2,161
12A; 50V; TO-22AB
.8A; 35V; TO-220AC
2-161
16A; 35V; TO-220AB
2-161
8A; 4OV; TO-220AC
2-161
16A;40V; TO-220AB
2 161
8A; 45V; TO-220AC
2-161
16A; 45V; TO·220AB
2-161
2-161
8A; 50V; TO-220AC
2-161
16A; 50V; TO-220AB
2-161
'12A; 35V; TO'220AC
.2-161'
12A; 4OV; TO-220AC
12A; 45V; TO-220AC
2-161
2-161
12A; 50V; TO-220AC
2-161
16A; 35V; TO-220AC
16A; 4OV; TO-220AC
2·161
16A; 45V; TO-220AC
2-161
16A; SOV; TO-220AC
2-161
2-161
30A; 30V; TO-3P;Center-Tap
2-164
'30A; 30V; TO-3P
2-164
30A; 40V; TO-3P; Center-Tap
2-164
30A; 40V; TO-3P
30A; 45V; TO-3P; Center-Tap
2·164
30A; 45V; TO-3P
2-"164
45A; 30V; TO-3P; Center-Tap
2-164
45A; 30V; TO.3P
2-164
2-164
45A; 4OV; TO-3P; Center'Tap
45A;40V; TO-3P
.2-164
2-164 •.
45A; 45V; TO-3P; Center'Tap
.. 45A; 45V; TO-3P
c2-164
60A; 35V.; DO-5
2·164
60A; 45V; DO·5
2'1'64
. 2-164
75A; 20V; DO-5
75A; 25V; DO-5 .
2-164
2-167
2-167
0

USR12
USR15
USR20
USR25
USR30
USR35
USR40A
USR45A
'USR50A
USR60A
USR70A
USR80A
USRlOOA
USR120A
USR150A
USRl80A
USS5
USS7.5
USS10
USS15

l.2kV
l.5kV
2.0kV
2.5kV
3.0kV
3.5kV
4.0kV
4.5kV
5.0kV
6.0kV
7.0kV
8.0kV
lOkV
12kV
15kV
18kV
5.0kV
7.5kV
10kV
15kV

RECTIFIER
UT234
UT235
UT236
UT237
UT238
UT242
UT244
UT245
UT247
UT249
UT251
UT252
UT254
UT255
UT257
UT2.58
UT261
UT262
UT264
UT265
UT267
UT268
UT347
UT361
UT362
UT363
U1364
UT2005
UT2010
UT2020
UT2040
UT2060
UT3005
UT3010
UT3020
UT3040
UT3060
UT4005
UT4010
UT4020
UT4040
.UT4060
UT5105
UT5105HR2

l.OA; 200V
1,OA;400V
l.OA; 100V
l.OA; 500V
1.0A; 600V
l.25A; 200V
l.25A; 400V
l.25A; 500V
l.25A; 600V
l.25A; 100V
l.5A; 100V
l.5A; 200V
1.5A; 400V
l.5A; 500V
1.5A; 600V
l.5A; 800V
2.0A; 100V
2.0A; 200V·
2.0A; 400V
2.0A; 500V
2.0A; 600V
2.0A; 800V
l.OA; l000V
l.OA; 800V
l.2A; 800V
l.2A; 1000V
l.5A; 1000V
2.0A; 50V
2.0A; l00V
2.0A; 200V
2.0A; 400V
2:0A; 600V
3.0A; 50V
,3.0A; 100V
3.0A;200V
. 3.0A; 400V
3,OA';600V
4.0A; 50V
4:0A;I00V
4.0A;.200V
4.0A; 400V
·4.0A;600V
. 7.5A; 50V
7.5A; 50V

, Contact Unit rode

··t For.complete datasheet information contact Unitrode
legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE·· SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA O~I72
'TEL. (617) 926·0404 • FAX (617) 924·1235

1-10

·PRINTED IN USA

PART NUMBER INDEX

PAGE

DESCRIPTION

PART NUMBER

PAGE

PART NUMBER

RECTIFIER

RECTIFIER
2-167
2-167
2-167
2-167
2-167
2-167
'2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-167
2-170
2-170
2-170
2-170
2-170
2-170
2-170
2-170
2-170
2-170
2-170
2-17'0
2-170
'2-170
2-170
2-170
2-170
2'170
2-170
N70

.•

2-173
2-173
'2-173
2-173
2-173
2-173
2-173
2-173

UT5110
UT5110HR2
UT5120
UT5120HR2
UT5140
UT5140HR2
UT5160
UT5160HR2
UT6105
UT6105HR2
UT6110
UT6110HR2
UT6120
UT6120HR2
UT6140
UT6140HR2
UT6160
UT6160HR2
UT8105
UT8105HR2
UT8110
UT8110HR2
UT8120
UT8120HR2
UT8140
UT8140HR2
UT8160
UT8160HR2
UTROI
UTR02
UTRlO
UTRll
UTR12
UTR20
UTR21
UTR22
UTR30
UTR31
UTR32
UTR40
UTR41
UTR42
UTR50
UTR51
UTR52
UTR60
UTR61
UTR62
UTR70
UTR71
UTR2305
UTR2310
UTR2320
UTR2340
' UTR2350
UTR2360
UTR3305
UTR3310

7.5A; 100V
7.5A; 100V
7.5A; 200V
7.5A; 200V
7.5A; 400V
7.5A; 400V
7.5A; 600V
7,5A; 600V
9,OA;50V
9.0A; 50V
9.0A; 100V
9.0A; 100V
9.0A; 200V
9.0A; 200V
9.0A;400V
9.0A;400V
9.0A;600V
9.0A;600V
12.0A; 50V
12.0A; 50V
12.0A; 100V
12.0A; 100V
12.0A; 200V
12.0A; 200V
12.0A; 400V
12.0A; 400V
12,OA; 600V
12.0A; 600V
l.OA; 50V
2.0A; 50V
,0.5A; 100V
l.OA; 100V
2.0A; 100V
0.5A; 200V
l.OA; 200V
2.0A; 200V
0.5A; 300V
l.OA; 300V
2.0A; 300V
0.5A; 400V
l.OA; 400V
2.0A; 400V
0.5A; 500V
l.OA; 500V
2,OA; 500V
0,5A; 600V
l.OA; 600V
2.0A;600V
0.5A; 700V
:l.OA; 700V
2.0A; 50V
2.0A; 100V
2.0A;QOOV
.2.0A; 400V
2.0A; 500V
2.0A; 600V
3.0A; 50V
3.0A; 100V

DESCRIPTION

2-173
2-173
2-173
2-173
2-173
2-173
2-173
2-173
2-173
2-173
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-176
2-179
2-179
·2-179
2-179
2-179
.2-179
2-179
2-179
2-179
2-179
2-182
2-182
2·182
2-182
2:182
2-182
2-182
2-182

UTR3320
UTR3340
UTR3350
UTR3360
UTR4305
UTR4310
UTR4320
UTR4340
UTR4350
UTR4360
UTR4405
UTR4405HR2
UTR4410
UTR441OHR2
UTR4420
UTR4420HR2
UTR4440
UTR4440HR2
UTR5405
UTR5405HR2
UTR5410
UTR541OHR2
UTR5420
UTR5420HR2
UTR5440
UTR5440HR2
UTR6405
UTR6405HR2
UTR6410
UTR641OHR2
UTR6420
UTR6420HR2
UTR6440
UTR6440HR2
UTX105
UTX110
UTX1l5
UTX120
UTX125
UTX205
UTX210
UTX215
UTX220
UTX225
UTX3105
UTX3110
UTX3115
UTX3120
UTX4105
UTX4110
UTX4115
UTX4120

3.0A; 200V
3.0A; 400V
3.0A; 500V
3.0A; 600V
4.0A; 50V
4.0A; 100V
4,OA; 200V
4.0A; 400V
4.0A; 500V
4.0A; 600V
6.0A; 50V
6.0A; 50V
6.0A; 100V
6.0A; 100V
6.0A; 200V
6,OA; 200V
6,OA; 400V
6.0A; 400V
7,5A; 50V
7.5A; 50V
7,5; 100V
7.5A; 100V
7.5A; 200V
7.5A; 200V
7.5A; 400V
7.5A; 400V
9.0A; 50V
9.0A; 50V
9.0A; 100V
9.0A; 100V
9.0A; 200V
9.0A; 200V
9.0A;400V
9.0A; 400V
1.0A; 50V
l.OA; l00V
l.OA; 150V
l.OA; 200V
l.OA; 250V
2.0A; 50V
2.0A; 100V
2.0A; 150V
2.0A; 200V
2,OA; 250V
3.0A; 50V
3.0A; 100V
3.0A; 150V
3.0A; 200V
4.0A; 50V
4.0A; lOOV
4.0A; 150V
4,OA; 200V

ZENER
4-27
4-27
4-27
-4-27

UZll0-UZ1l9
UZ11OHR2-UZ119HR2
UZ120-UZ140
. UZ140HR2-UZ706HR2

,3W;5%
3W; 5%
3W;5%
3W;5%

• Contact Unitrode

t For complete datasheet information contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

1-11

PRINTED IN U.S.A

PART NUMBER INDEX

PAGE

DESCRIPTION

PART NUMBER

PAGE'

PART NUMBER

DESCRIPTION

ZENER
4-27
4-27
4-27
4-27
4-27
4-27
4-29
4-29
4-29
4-29
4-31
4-31
4-31
4-31
4-31
4-31,
4-31
4-334-33
4-33
4-33
4-33
4-33
4-33
4-33
4-33
4-33
4-33
4-33
4-36
4-36
4-36
4-36

UZ210HR2-UZ219HR2
UZ220HR2-UZ24OHR2
UZ706HR2-UZ760HR2
UZ.770HR2:UZ790HR2
UZ806HR2'UZ860HR2
UZ870HR2-UZ890HR2
UZ4110-UZ412O
UZ421O-UZ422O
UZ4706-UZ4791
UZ4806-UZ4891
UZ5110-U25119
UZ5120-UZ514O
UZ521O-UZ524O
UZ5706-UZ5760
UZ5770-UZ5790_
UZ5806-UZ5860
UZ5870-UZ5890
UZ7110HR2
UZ7110lHR2
UZ72lOHR2
UZ72lOlHR2
UZ7706HR2-UZ7750HR2
UZ7706lHR2-UZ7750lHR2
UZ7756HR2-UZ7790HR2
UZ7756lHR2-UZ.7790LHR2
UZ7806HR2-UZ7850HR2
UZ7806lHR2-UZ7850LHR2
UZ7856HR2-UZ7890HR2
UZ7856lHR2-UZ7890lHR2
UZ811O-UZ8120
UZ821O-UZ8220
UZ8706-UZ8790
UZ8806-UZ8890

3W; 10%
3W; 10%
3W;5%
3W;5%
3W; 10%
3W; 10%
5W;5%
5W; 10%
5W;5%
5W; 10%
5W;5%
5W;5%
5W; 10%
5W;5%
5W; 5%
5W; 10%
5W;10%
lOW;,5%
6W;'5%
lOW; 10%
6W; 10%
lOW; 5%
6W;5% lOW; 5%
6W;5%,
lOW; 10%
6W; 10% lOW; 10%
6W; 10%
1W; 5%
1W; 10%
1W;5%
1W; 10%

• Contact Unit rode

t For complete datasheet information contact Unitrode
Legend: J-JAN JTX-JANTX JTXV-JANTXV
UNITROOE • SEMICONOUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL (617) 926-0404 • FAX (617) 924-1235

1-12

PRINTED IN U.S~A.

"

RECTIFIERS

Product Selection Guides
Schottky Rectifiers .............................................. 2-3
HV Plus Rectifiers '" ........................................... 2-5
Ultra-Fast Recovery Rectifiers ...................................... 2-6
Super-Fast Recovery ............................................ 2-8
Fast Recovery ................................................. 2-9
Bi-Synchronous Rectifier . ......................................... 2-9
Standard Recovery . ........................................... . 2-10
Datasheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ................ 2-11

. UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

2-1

PRINTED IN U.S.A.

..

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

2-2

PRINTED IN U.S.A. :

SCHOTTKY RECTIFIERS

PRODUCT SELECTION GUIDE

WW,I9.
1O-22OAC

10-220.8

1N64924
USD245C
.45@2A
80A

USD735C
.60@16A
200A

USD935
.53@ 16A
250A

USD740C
.60@16A
200A

USD940
.53@ 16A
250A

USD745C
.60@ 16A
200A

USD945
.53@ 16A
250A

USD750C
.60@ 16A
200A

USD950
.53@ 16A
250A

NarES: 1. Center·tap 6A per leg.
2. Center-tap 8A per leg.
3. Center·tap 15A per leg.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

DO·4

~~

..

~
6>

.

TO.39

o

0

TO·3P
2 ....

TO·3P
3

w,

USD635
.48@6A
150A

USD735
.48@8A
200A

USD635C
.60@ 12A
150A

USD835
.51 @ 12A
200A

USD640
.48@6A
150A

USD740
.48@8A
200A

USD640C
.60@ 12A
150A

USD840
.45 @ 12A
200A

USD645
.48@6A
150A

USD745
.48@8A
200A

USD645C
.60@ 12A
150A

USD845
.45@ 12A
200A

USD335C'
.6@20A
400A

1N6391'
.68@50A
600A

USD3040S
.70@30A
450A

USD3040C
.71 @30A
400A

USD3045S
.70@30A
450A

USD3045C
.71 @30A
400A

USD345C'
SD241'
.6@20A
400A

4. Available as JAN, JANTX, JANTXV.
5. Available with High·Reliability (HR2) Screening.

2-3

PRINTED IN U.S.A.

..

SCHOTTKY RECTIFIERS

PRODUCT SELECTION GUIDE

~OO-5
USD4530S
)O@45A
450A

USD4530C
.70@45A
450A

fO~ro-3P fl10-3P
n~Lead lIT3Lead

IN609l
.86 @ 15lA
800A
USD535
.6@ 60A
1000A

USD4540C
.70@45A
450A

USD4540C
.70@45A
450A

USD4545S
.70@45A
450A

USD4545C
.70@45A
450A

IN6098
.86 @ 15lA
800A
1N6392'
SD51'
.6@60A
SOOA

USD545
.6 @60A
IOOOA
USD550
.6 @ 60A
lOOOA

NOTES: 1. VRRM @ 25°C is 45V, VRRM @ 150ac is 35V.
2. Available as JAN, JANTX, JANTXV.
3. Center·tap 23A per leg.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-4

PRINTED IN U.S.A

PRODUCT SELECTION GUIDE

RECTIFIERS

ID

II

I.
HV PLUS RECTIFIERS
"'"-",--c--"~",.....,.,,..,..,=

IN6621
UHVP204
1.6V @ 2A
30 nSec

IN6627
UHVP404
1.5V@4A
30 nSec

IN6622
UHVP206
1.6V@2A
30 nSec

IN6628
UHVP406
1.5V@4A
30 nSec

IN6623
UHVP208
1.8V@ 1.5A
50 nSec

IN6629
UHVP408
1.7V@3A
50 nSec

IN6624
UHVP209
l.8V@l.5A
50 nSec

IN6630
UHVP409
1.7V@3A
50 nSec

IN6625
UHVP210
1.95V@l.5A
65 nSec

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEl. (617) 926·0404 • FAX (617) 924·1235

IN6631
UHVP410
l.95V@2.5A
65nSec

2-5

PRINTED IN U.S.A.

PRODUCT SELECTION. GUIDE

RECTIFIERS

i

l' .
i

TO.220AB

ULTRA·FAST RECOVERY. (trr - 25 to SOns)

25n5

25n5

30n5

IN5S03
.S95@ lA
25n5

IN5S08
.850 @ 6A
30n5

IN5S04*
UESll02
.895 @ 2A
25n5

IN5S09*
UES1302
.850@ 6A
30n5

IN5805
.S95@ lA
25n5

IN5S10
.S50@6A
30n5

IN5S06*
UESll03
.895 @2A
25n5

IN5S11*
UES1303
.S50@6A
30n5

UESl104
1.15@ lA
50n5

UES1304
1.15@3A
50n5

UESll05
U5@lA
50n5

UES1305
1.15 @3A
50n5

UESll06
1.15 @ lA50n5

UES1306
1.15@3A
50n5

UES1501
UES1401
UES2401
.S95@SA .S95 @ 16A .S95@SA
35n5
35n5
35n5

UES1502
UES2402
UES1402
.895 @SA .895 @ 16A .S95@SA
35n5
35n5
35n5

UES1403
.S95@SA
35n5

UES2403
.895@SA
35n5

UES1404
.S95@SA
35n5

UES2404
.S95@SA
35n5

• Available as JAN, JANTX, JANTXV.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172

TEL (617) 926·0404 • FAX (617) 924·1235

2-6

PRINTED IN U.S.A.

RECTIFIERS

PRODUCT SELECTION GUIDE

ULTRA-FAST RECOVERY (trr - 25 to SOns)

UES3005C UES2601' UES4505S UES4505C
.93 @ 30A .825 @ 15A .95 @ 45A .95 @ 45A
35ns
35ns
50ns
50ns

35ns

50ns

UES3010C UES2602' UES4510S
.93 @ 30A .825 @ 15A .95 @ 45A
35ns
35ns
35ns

UES4510C
.95 @ 45A
50ns

IN6305*
UES802
.84@70A
50ns

UES3015C
.93@30A
35ns

UES4515C
.95 @ 45A
50ns

IN6306*
UESB03
.84@ 70A
50ns

UES4515S
.95 @ 45A
50ns

UES804
1.15 @ 50A
50ns
UES805
1.15 @ 50A
50ns
UES806
1.15 @ 50A
50ns
• Available as JAN, JANTX, JANTXV.
1. Available with High-Reliability (HR2) Screening.
See individual datasheets.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-7

PRINTED IN U.S.A.

..

PRODUCT SELECTION GUIDE

RECTIFIERS

I.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

UTX110
1.00@.5A
75ns

UTX210
1.0V@ 1A
75ns

UTX3110
1.0V@ 2A
lOOns

UTX4110
1.OV@3A
lOOns

UTX115
1.00@.5A
75ns

UTX215
1.0V@ 1A
75ns

UTX3115
1.OV@2A
lOOns

UTX4115
1.0V@3A
lOOns

UTX120
1.00@ 1A
75ns

UTX220
1.0V@ 1A
75ns

UTX3120
LOV@2A
lOOns

UTX4120
LOV@3A
lOOns

UTX125
LOO@.5A
75ns

UTX225
LOV@lA
75ns

2-8

B

PRODUCT SELECTION GUIDE

RECTIFIERS

I.
FAST RECOVERY (tr -

~

~TO-3

B

150 to 500n5)

l.lV @ .5A
250ns

l.lV@ lA
250ns

l.lV @3A
250ns

1.5V@9A
150ns

l.lV @4A
250ns

UTRll

UTR12

UTR33 10

INS416*
IN5186**

UTR4310

l.lV@ .5A
250ns

l.lV@ lA
250ns

l.lV @ 3A
250ns

1.5V@9A
150ns

l.lV @4A
250ns

UTR21

IN4942*
IN5615*

UTR22

UTR3320

IN5417*
IN5187**

UTR4320

l.lV@.5A
250ns

l.3V@ lA
150ns

l.lV @ lA
250ns

l.lV @3A
250ns

1.5V@ 9A
150ns

l.lV@4A
250ns

UTR31
300ns
UTR41

IN4944 *
IN5617*

UTR42

UTR3340

IN5418*
INS188**

UTR4340

l.lV@ .5A
350ns

l.3V@ lA
150ns

l.1V@ lA
350ns

l.lV@3A
300ns

1.5V@9A
150ns

l.lV @4A
400ns

UTR52
l.1V@ lA
400ns

UTR3350
l.lV @3A
350ns

IN5419*
1.5V @ 9A
250ns

UTR4350
l.lV@4A
400ns

UTR62

UTR3360

l.lV@ lA
400ns

l.lV @3A
400ns

IN5420*
IN5190**
1.5V@9A
400ns

l.lV @4A

UTR51

l.lV@ .5A
400ns

l.lV@ .5A
400ns

UTR4410
UTR541O '
UTR641O '
l.1V @ 6A
300ns
UTR4420
UTR5420 '
UTR6420 '
l.1V @ 6A
400ns

UTR32
l.lV@ lA
300ns

l.lV@ .5A

UTR61

UTR440S '
UTR5405 '
UTR6405 '
l.lV @ 6A
300ns

IN4946*
IN5619*
1.3V@ lA
250ns

UTR4440 '
UTR5440 '
UTR6440 '
l.1V @ 6A
500ns

UTR4360
400ns

• Available as JAN, JANTX, JANTXV .
•• Available as JAN, JANTX.
1. Available with High Reliability (HR2) Screening.
See individual data sheets.

BI;SYNCHRONOUS RECTIFIER
Continuous
Forward Current

20A

40A

Package Style

TO-220AB

TO-3

Forward
Blocking
Voltage, VCES

50V

I

UBS421

50V

I

UBS430

80

50

RCEIONI

14mO Typical

7mO Typical

VCEISATI

.95V Typical

1.2V Typical

hFE

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

2-9

PRINTED IN U.S.A.

..

RECTIFIERS

PRODUCT SELECTION GUIDE

~

lJ

~

A

STANDARD RECOVERY

UT235
IN4246'
IN5616'

UT3020

UT4020
IN5550'

UT5120'

UT6120'

UT8120'

UT3040

UT4040
IN5551*

UT5140'

UT6140'

UT8140'

UT3060

UT4060
IN5552'

UT5160'

UT6160'

UT8160'

IN3612"

UT238
IN4247*
IN5618*

UT267
IN3613"

UT361
IN4248'
IN5620'

UT268
IN3614"

UT347
IN4249'
IN5622*

UT364

IN5553*

• Available as JAN, JANTX, JANTXV.
,. Available as JAN, JANTX.
t Radiation Tolerant
1. Available with High Reliability (HR) Screening.
See individual datasheets
.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-10

PRINTED IN U.S.A.

RECTIFIERS

JAN &JANTX IN3611-1N3614

Military Approved, 1 Amp,
General Purpose

lEI

FEATURES
• Qualified to MIL-S-19500/228
• Continuous Rating: lA
• Surge Rating: 30A
• PIV: to 800V

DESCRIPTION
This series of MIL approved JAN and
JANTX general purpose lamp rectifiers are
useful in many high rei applications.

ABSOLUTE MAXIMUM RATINGS
Peak Reverse Voltage Min.

Reverse Working Voltage

240V
480V
720V
920V

200V
400V
600V
800V

Type

JAN
JAN
JAN
JAN

& JANTX IN3611
& JANTX IN3612
& JANTX IN3613
& JANTX IN3614

Maximum Average D.C. Output Current
l.OA
@ TA = lOO·C
O.3A
@ TA
150·C
Non-Repetitive Sinusoidal
Surge Current (8.3ms) .
.. 30A
Operating Temperature Range
.... -WC to +175·C
Storage Temperature Range
........... -65·C to +200·C
........ See Lead Temperature Derating Curve
Thermal Resistance .

=

MECHANICAL SPECIFICATIONS

r

BAND INDICATES
CATHODE END"1

.155 TYP.
3.9mm

\1

~

h-------!
1I I

MIN~50

---JOO
-17.8mm

JAN & JANTX1N3611-1N3614

MAL
6.35mm-

J c::::::J

r., t
+ L

BODY A

.085 MAX.
2.l6mm

L-

.030 ±.OO1
O.77mm ±,03

.015~~~P'

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONDUCTOR

~ PRODUCTS

2-11

_'UNITRODE

JAN & JANTX 1N3611-1N3614

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Type

JAN
JAN
JAN
JAN

Peak
Reverse
D.C. Voltage

Minimum
Reverse
Breakdown
Voltage
@ 100pA

200V
400V
600V
BOOV

240V
4BOV
720V
920V

& JANTX 1/113611
& JANTX 1N3612
& JANTX 1N3613
& JANTX 1N3614

Maximum D.C.
Reverse

~ 3

3.5

~~~

o

L=~

'"u:

;:::2
o

1"--,

'"
Q:

.."'"

"''"" """"" ~

.............

Q:

~
I

1

2.5

t--.

.2

2

~
'"

:II

@
~-I

1.5' ~

d

" ~~

IIIIII

"z

i

4

"'l

Q:

300p.A

'""
Q:

;;)

en

80

....'"
en

I

I

I I

TUrret I" centers-

60

o

'"u:
o

"1111

I---I--+-t++tffil!:=:,.;::;~~.j;~::-lt..:-I Tur;~:~~~~ C~i~!:~~r-:
_.

40

20

o
f.

10
100
CYCLES AT 60 Hz HALF SINE WAVE

.5

1,000

l'\

25

50
75
100
125
150
TL - LEAD TEMPERATURE ('C)

175

Typical Forward Current
vs Forward Voltage

Typical Reverse Current vs PIV

10

.001
.002

;;

v

Z

'"

....

Z .2

DQ

Q:
Q:
;;)

l.J ~/s.CJ

S~~!f.r1-1-'

.1

;;)

0.05

I

I

/

.002
.001
.2

II

.4
V, -

c-

'"en

II

./
-+25'C

...... r-

.5

Q:

----

~25'C

50
100
150
1.2

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

""'-

+ 75'C

10
20

II

.6
.8
1
VOLTAGE (VI

.05
.1
.2

'">
'"0:

/

II

.01
.005

u

ilil I

..!".02

.,/
50'C

.005
.01

.5 .02
....

/

~ .5

'"~

150'C

Allowable Forward Surge vs Number of Cycles

I

;;)

I

1p.A

@1.0A

100

L = ¥a"

o

at D.C. Voltage
25'C

l.1V(pk)

O.6V

Maximum Current
vs Lead Temperature

~
....
z

Current

Peak

Forward Voltage
Min.
Max.
I

100

50
% OF PIV

1.4

2-12

PRINTED IN U.S.A.

1N4245-1 N4249
JAN, JANTX &JANTXV

RECTIFIERS
Military Approved, 1 Amp,
General Purpose
FEATURES
• Qualified to MIL-S-l9500/286_
• Surge Rating: 25A
• PIV: to lOOOV
• Controlled Avalanche
• No Plastic, Epoxy, Silicone, Oxides, Gases or Solder are used

DESCRIPTION
This series of general purpose power
rectifiers are available as JAN, JANTX or
JANTXV for many power supply applicatons.

ABSOLUTE MAXIMUM RATINGS
Maximum Reverse Voltage

Type

200V
400V
600V
BOOV
loaav

JAN, JANTX, JANTXV IN4245
JAN, JANTX, JANTXV IN4246
JAN, JANTX, JANTXV IN4247
JAN, JANTX, JANTXV lN4248
JAN, JANTX, JANTXV lN4249

Maximum Average D.C. Output Current
lOO'C ....................................................................................... 1.0A
@ TA
@ TA = 150'C ................................................................................... O.333A
Non-Repetitive Sinusoidal
Surge Current ....................................................................................... 25A
Operating Temperature Range ........................................................................ -65'C to +175'C
Storage Temperature Range ............................................................................ -65'C to +175'C
Thermal Resistance ...................................................See Lead Temperature Derating Curve

=

MECHANICAL SPECIFICATIONS

c::::=::J {

.155TYP.
3.9mm

.1

L

~~ ..l.=
1-17.8mm

J, JTX, JTlW lN4245-1N4249

r

BAND INDICATES
CATHODE END

6.35mm~

~

c:::::::J

r:-, t
+ L

BODYA

.085 MAX.
2.16mm

.030±.OOl
O.77mm ±.03

'- .O[~~~p.

THESE OEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nL:::::Jn

SEMICONDUCTOR
PRODUCTS

1/79

2-13

_UNITRDDE

JAN, JANTX, JANTXV 1N4245-1N4249
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Minimum
PIV

J, JTX, JTXv 1N4245
J, JTX, JTXV 1N4246
J, JTX, JTXV 1N4247
J, JTX, JTXV 1N4248
J, JTX, JTXV 1N4249
*Measured in circuit IF

400V
600V
800V
1000V
IR

Forward

Voltage
@ 100~A

Voltage

Max.

Min.

240V
480V

200V

= V2A,

Breakdown

1.3V(pk)
0.6V
@3.0A(pk)

nov
960V
1150V

1.0pA

.001

.002
.005
.01
~- .02
....
Z

5.5
!oJ f:J

'":::J
u

~ll'J

$ ~ f:J tt-r---

.1

./-1-

U.05

il/ /

I
.."..02

II

.01
.005

I

.2

.4
V, -

10-"

....

"i=Z

.

c:

'"c:

"

:l

80

60

III

0

"'i;:

40

'"0.
..."'0

20

."'-.

3

:l

./

U

~2S'C

o

"'i;:i= 2
'"
'"~'"

--r+7S'C

5.01'5

II

150

100

=~ ..
3.5

~("

L=~

~r--...

I""'" '"""" ~

.'"

1.2

25

~

~

50
75
100
125
150
T, - LEAD TEMPERATURE ('C)

.5

175

Q

10 \I

+

Turret 1/2" centers
Printed Circ,uit

_

-=-

25Vdc
(APPROX.)
III
NOTE 3

t---

~ ~~

<:i

~

0

ALL SERIES

I I
1111
I I
JTurret
1" centers
~:;
"-

...".l

Reverse-Recovery Circuit
50

III

~~

1.5

~

50

1.4

r-....

:II

"~ ~

I

% OF PIV

.6
.8
1
VOLTAGE (V)

~"
'"rel

2.5

~

~ 1

~25;C

50
100

Allowable Forward Surge vs Number of Cycles
100

150pA

"'l

Z

::!c:

u

10
20

II
II

.001

----

.5

/

/

.002

'"
'">'"
'"'"

III

-I- i- I

L

5

50'C

.05
.1
.2

'"'"

....

"'~

Time*

Maximum Current
vs Lead Temperature

Typical Reverse Current vs PIV

10

:l

Reverse

Recovery

= t.OA, IREe = 1A:A

Typical Forward Current
vs Forward Voltage

Z .2

Maximum

Maximum
Reverse
Current
2S'C
ISO'C

Reverse
Type

OSCILLOSCOPE
NOTEI

NOTES:

#10
100
CYCLES AT 60 Hz HALF SINE WAVE

UNITRODE - SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 - FAX (617) 924-1235

1.000

2-14

1. OsciHoscope: Rise time ~ 305; input impedance = SOU.
2. Pulse Generator: Rise time ~ 8ns; source impedance 1011.
3. Current viewing resistor, non-inductive, coaxial recommended.

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV IN4942
JAN, JANTX, & JANTXV 1N4944
JAN, JANTX, & JANTXV 1N4946

RECTIFIERS
Military Approved, 1 Amp,
Fast Recovery
FEATURES

OESCRIPTION

•
•
•
•

These fast recovery rectifiers are suitable
for use as power devices for many appli·
cations. Devices are available as
JAN, JANTX or JANTXV.

Qualified to MIL·S·19500/359
Surge Rating: 15A
PIV: to 600V
Controlled Avalanche

ABSOLUTE MAXIMUM RATINGS
Maximum Reverse Voltage

Type

200V
400V
600V

JAN, JANTX, & JANTXV IN4942
JAN, JANTX, & JANTXV IN4944
JAN, JANTX, & JANTXV IN4946

Maximum Average D.C. Output Current
@ TA = 55'C ...
... l.OA
@ TA
lOO'C
....................... O.7SA
Non·Repetitive Sinusoidal
Surge Current (8.3ms) ....... .
.......................................... lSA
Operating Temperature Range ........ .
....... -65'C to +175'C
Storage Temperature Range ..'....... .
....................................................... -65'C to +17S'C
Thermal Resistance ....................... .
..... See Lead Temperature· Derating Curve

=

MECHANICAL SPECIFICATIONS

BAND INDICATES
CATHODE END

c::::::J[

~II

r

.155TYP.
3.9mm

L _ :::::> s::::=:::J

~MM,J.:::_
17.8mm

JAN, JANTX, & JANTXV lN4942, lN4944, lN4946

6.35mm

BODY A

r:, t.

.085 MAX.
2.l6mm

+

L
I--

.030±.001
O.77mm ±.03

.055TYP.
1.4mm

1.625 MIN.
41.3mm

THESE OEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONDUCTOR

~ PRODUCTS

1/79

2·15

_UNITRDDE·

lEI

JAN, JANTX, & JANTXV IN4942, IN4944, IN4946
ELECTRICAL SPECIFICATIONS (at25'C unless noted)
Minimum
Reverse

Type

J, JTX, JTXV IN4942
J, JTX, JTXV IN4944
J, JTX, JTXV IN4946

Peak
Inverse
Vollage

Breakdown

200V
400V
600V

220V
440V
660V

Voltage

@

1.0pA

@IAdc

200pA

::J
U
C

w

ii:

~

OJ

a:

OJ

C>

«

.

L=~

0

L~ ~

.............

............ 1"--...

Q:

OJ

~

~

I

50

75

VV/V

.2

=<

'"

.1
::J
u .05

c:-f

0

11

...
~

............

~"
............

.5

100

125

150

'"0

JJJ.

II

.01

II

.002

.5

en

.2

.4
V, -

./

.
+25'C

Q:

>
W

-r

0:

+75'C

1/

10
20

150

.6
.8
1
VOLTAGE IVI

1.2

~'{:

II

50
100

I

100

50
% OF PIV

1.4

Characteristic Waveform.

Reverse-Recovery Circuit
10 u

+O.SA

+
_
-=-

u
w

II

.001

--

.05
.1
.2

Q:
0:

:J

/

.005

SO'C

w

/ II I

I

LEAD TEMPERATURE ('C)

501l

I

1-

.005
.01
.02

w

rr-

I/,{'
CJ
CJ
~&;:.f?

~.02

175

;;0

...Z

/V/

.5

"' "'a:a:

~

T, -

5:
I-

Z

@

.!?

25

;;

/1/

.......

45pf
35pf
25pf

.001
.002

w

L = '18"

150ns
150ns
250ns

Typical Reverse Current vs PIV

10

...z
Q:
Q:

CaP!lcitance
@V,=12V
f = IMHz

Recovery

Typical Forward Current
vs Forward Voltage

1.S AMP SERIES

Time*

Reverse

Current
150'C
25'C

1.3Vdc

0.6V

Maximum

Reverse

I

5O~A

Maximum Current
vs Lead Temperature

g

Maximum
Forward
Vollage
Min.
Max.

25Vdc
(APPROX.)

-1

r-

t"

'\

OA

1\1
NOTE3

;'

-0.2SA
II

-1.1lA

NOTES:
1. Oscilloscope: Rise time -::; 3n5; input impedance:::::: 50U.

-

/

\/
H SJ~"TIME

BASE
FOR 50 TO 100 nslem

2. Pulse Generator: Rise time ~ 8nsi source impedance IOU.

3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE • SEMICONDUCTOR PRODUCTS

580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404. FAX (617) 924-1235

2-16

PRINTED IN U.S.A.

IN5186·1N5190
JAN &JANTX

RECTIFIERS
Military Approved, 3 Amp,
Fast Recovery

IIJI

FEATURES
• Continuous Rating: 3A
• Qualified to MIL·S·19500/424
• PIV: to 600V
• Recovery Time: l50ns
• Miniature Size
• Controlled Avalanche

DESCRIPTION
These miniature fast recovery rectifiers
permit operation at full power at frequen·
cies as high as 100kHz sine wave.
They are qualified to military specification
and available as JAN, JANTX

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

100V
200V

Type

JAN & JANTX lN5l86
JAN & JANTX lN5l87

400V

JAN & JANTX lN5188

600V

JAN & JANTX lN5190

Maximum Average D.C. Output Current

@ TA = 25°C ............................. .
3.0A
...... O.7A
@ TA = 150°C
Non·Repetitive Sinusoidal
........... BOA
Surge Current (8.3ms)
Operating Temperature Range
................. .
. -wC to +175°C
Storage Temperature Range ......................................... .
.... -65°C to +200°C
.. ... ... ............ See Lead Temperature Derating Curve
Thermal Resistance

MECHANICAL SPECIFICATIONS
JAN & JANTX lN5186·1N5190
BAND INDICATES
CATHODE END

i

\1

r.

BODY B

.145 MAX.
3.68mm

~C===~~~~~~\~~~I~~~-~t~t

1

..
.975 MIN.
24.8mm

L

.300 MAX.
7.62mm

.040±.001
L02mm±.03

.115 TYP
2.9mm

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONDUCTOR

~ PRODUCTS

2·17

_UNITRODE

JAN, JANTX INS186-1NS190
ELECTRICAL SPECIFICATIONS (at 2S'C unless noted)
Maximum

Inverse

Minimum
Reverse
Breakdown

Voltage

Voltage @ 100"A

lOOV
200V
400V
600V

l20V
240V
480V
660V

Peak
Type

J, JTX
J, JTX
J, JTX
J,JTX

lNS186
1N5187
lNS188
1NS190

Voltage

Min.

J, JTX
J, JTX
J, JTX
J, JTX

lNS186
lNS187
lN5188
INS190

I

Max.

2S'C

100'C

21lA

lOOIlA

l.SV

O.9V
@9A(pk)
(8.3ms)

Capacitance

Capacitance

Time*

@V,=OV
f -lMHz

@V,=4V
f -lMHz

150n5
200ns
250n5
400n5

300pf
300pf
230pf
l80pf

200pf
170pf
120pf
90pf

Reverse
Recovery
Type

Reverse D.C.
CUrrent
@PIV

Peak

Forward

'F = O.SA to 'R = l.OA, 'REe = O.25A

*Recovery time measured from

Reverse-Recovery Circuit
Maximum Current vs. Lead Temperature
L = .125 ...

c

~

'"ii:_

r~~-C

i=5.
CJ ...

Ul Z

"'",

.........

r---....

L 1':750

Ul '"


"'"

"

+

" t-...."" t'i"...
...........
-..... I'\.

~
35

55
TL -

75

95

10 II

L = Lead Len~.!'.
frim B~dy
_

-=-

115

2SVdc
(APPROX.)

10

r--..: K'

ffiCJ

50 0

135

OSCILLOSCOPE
NOTE 1

NOTE3

~

155

175
NOTES:
1. Oscilloscope: Rise time ~ 3n5; input impedance::::: sou.
2. Pulse Generato'r: Rise time::::: 8ns; source impedance lOU.
3. Current viewing resistor, non-inductive, coaxial recommended.

LEAD TEMPERATURE ('C)

Typical Forward Current
vs Forward Voltage

Typical Reverse Current vs PIV

10

/V / /

_01

I

.3

.05
.1
_2

I

z

.5

:<

...
'"'"
:>

~ .5

...
z

Ul

.2

l&CJ

~ .1

K'
...

I
II
.2

I

~

1...--"""-t25'C

I

l-

'"
u

'"'">

I ....

10
20

1..---'" +7S'C
I-

Ul

a::

I

II

_r..:----50·C

!oJ

·en

II

.01
.005

.001

...g '"~~

III!

I
_".02

.002

CJ C,J CJ
c

"I- -I- "i- I

:>
u.05

~

.02

/

II

.4

.6.8

V, -

VOLTAGE (VI

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERTOWN. MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

50
100
/

200

[:4125'c

500
1.000

1.2

ISO

1.4

100

50

% OF PIV

2-18

PRINTED IN U.S.A.

RECTIFIERS
Military Approved, Fast Recovery, 3 Amp

FEATURES
• Qualified to MIL-S-l9S00/411
• PIV: to 600V
• Controlled AValanche

IN5415-1N5420
JAN, JANTX & JANTXV

DESCRIPTION
This series of devices as designed to meet
the need for high speed, power rectifiers
in military high-rei power supplies.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

Type

JAN, JANTX, JANTXV lNS4lS
JAN, JANTX, JANTXV lNS4l6
JAN, JANTX, JANTXV lNS417
JAN, JANTX, JANTXV lN54lB
JAN, JANTX, JANTXV lN54l9
JAN, JANTX, JANTXV lNS420

SOV
lOOV
200V
400V
SOOV
600V

Maximum Average D.C. Output Current
@ TA = SS·C ...................................................................................... 3.0A
@ TA = lOO·C ..................................................................................... 2.0A
Non-Repetitive Sinusoidal
Surge Curre!)t (B.3ms) ......................................................................... BOA
Operating Temperature Range ...........................................
.. ................. -6S·C to +l7S·C
Storage Temperature Range .................................
.. ....... -6S·C to +200·C
.. ........ 20·C/W
Thermal Resistance 9 JL @ L = 34".. ......................
See Lead Temperature
Derating Curve

MECHANICAL SPECIFICATIONS
BAND INDICATES
CATHODE END

r

i

.175 TYP.

\1
4.

c::::::J C

II

4.4mm

---.;

L

,~.,~=24.8mm

J, JTX, JTl(V lN5415-1N5420

762mm -

::> c::=:J

*'
+

BODY B

.145 MAX.
3.68mm

t

L

.040±.OOl
l.02mm±.03

-.~.~~~

Dimensions in inches.

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONDUCTOR

~ PRODUCTS

2-19

_UNITRODE

JAN, JANTX, JANTXV IN5415 -lN5420
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Minimum
Reverse

Type

Forward

Reverse

Voltage
@ SO~A

Voltage

Current

PIV

50V
100V
200V
400V
500V
600V

J, JTX, JTXV IN5415
J, JTX, JTXV lN54l6
J, JTX, JTXV lN5417
J, JTX, JTXV IN5418
J, JTX, JTXV IN5419
J, JTX, JTXV IN5420

'Measured In circuit IF =0.5 A, I.

== lA,

Maximum

Breakdown
Min.

I

Max.

2S'C

;;;
.3
I-

z

"'0:0:

::>
0

I

-

nov
220V
440V
550V
660V

1.0,aA

@9Adc
tp == 3001'5

Typical Forward Current
vs. Forward Voltage
20K
10K
5K

y

~

vt"1

f-'

Z 500

"'~ 200

aI

100
50

+100'C

.2

o

10

~

8

~

a.

.~~

'" ::>
0:
..
~ 0

;:c
35

........

--

L ';'750

55
T, -

.......

..........

~

r-.... r--.....

SOil

'"

~ ~'"

75

X

."-'. ,"'-

95

115

135

~

155

.8
1.2
VOLTAGE (V)

-

Tj

TL

R8JL

I.,..." < I 1

~J- ~'V<"s

~
~.7SO-_
I I I
I IL

~ 2

from BOdY-

'-

.6

p(ma~)

"'-

:;;

( = Le~d Le~gth

.125 "-

~

16

~ 12

0: "'
",0:

.6

v, -

1.4

1.6

Maximum Power
vs. Lead Temperature

§:

~ 14

=

if?

/

~

.4

50

Maximum Current VS. Lead Temperature

,OJ

./ II

-I-t'

100

(j

W
f-fh

+150'C

I-

_

llJ

/!/

II

*
"f..'"

5

~ 18

.

/J

20
10

-I

52

01"' Z

v.~

2K

;; 20

"'iLI-

",

;: lK
+25'"

L

20,aA

150
150
150
150
250
400

IREC =0.2SA.

bJc

7

Time*

1.5V(pk)

0.6V

% PIV

c

100'C

55V

Typical Reverse Current vs. PIV
.0001
.0002
.OOOS
.001
.002
.005
.01
.02
.05
.1
.2
.5
1
2
5
10
20
50
100
200
500
1000
150

Maximum
Reverse
Recovery

0
0

25
T, -

~<'\\
\''?f,

r-

1\

r--..

.J.r-c

r-- "- \
t--.'-

.500

Ii1Io}

50
75
100 125 150
LEAO TEMPERATURE ('C)

175

Reverse-Recovery Circuit
10 u

+

175

_
-=-

LEAO TEMPERATURE ('C)

25Vdc
(APPROX.)

III
NOTEJ

OSCILLOSCOPE
NOTE1

=

NOTES:
1. Oscilloscope: Rise time.:;:;: 3nsi input impedance = SOU.
2. Pulse Gene;rator: Rise time ~ 8ns; source impedance IOU.
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERTOWN, MA 02172
TEL. (617) 926-0404, FAX (617) 924-1235

2-20

PRINTED IN U.S.A.

1N5550-1 N5553

RECTIFIERS

JAN, JANTX & JANTXV

Military Approved, 5 Amp,
General Purpose

III

FEATURES
• Qualified to MIL-S-19500/420A
• Continuous Rating: 5A
• PI V: to BOOV
• TX Parts 100% Screened
• Miniature Size
• Controlled Avalanche

DESCRIPTION
This series of military approved rectifiers
is useful in many military applications.
The 100% screening requirements in the
"TX" version combined with the unique
Unitrode construction assures the highest
degree of reliability.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage
200V

Type
JAN:JANTX & JANTXV IN5550
JAN, JANTX & JANTXV IN5551

400V

JAN, JANTX & JANTXV IN5552
JAN, JANTX & JANTXV IN5553

600V
BOOV

Maximum Average D.C. Output Current

@ TA
@ TL

= 55'C """"", .. """""',',"""" .. """',", .. ""'"""_",""",,""""""'"

3.0A

= 55'C ,............................... ,.. "" .. " ..............................."" .. " ....,," 5.0A

Non-Repetitive Sinusoidal
Surge Current (B.3ms) ............ " .... " ................ " .. " ............ " ........... " ... 100A
Operating Temperature Range ........................ "" ........................................., -65'C to +175'C.
Storage Temperature Range ............................................" ............................. , -65'C to +200'C
Thermal Resistance .. " .........................." .................. See Lead Temperature Derating Curve

MECHANICAL SPECIFICATIONS

r

BAND INDICATES
CATHODE END ~

II

-

4,4mm

i.
f

I.

~"M'~=_

r--c-24,Bmm

BODY'B

.175 TYP.

~

c::=J C

J, JTX, JTXV 1N5550-1·N5553

7,62mm-

J c:::=::::J

,145 MAX,
3,68mm

t

L

t
_

,040 ±.00l
1.02mm±,03

,1l5TYP.
2.9mm

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

L=.J
2-21

SEMICONDUCTOR
PRODUCTS

_UNITRDDE

JAN, JANTX, JANTXV IN5550-1N5553
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Maximum
Leakage
Current
@PIV

Minimum
Voltage

Reverse
Breakdown
Voltage @ 50pA

J, JTX, JTXV IN5550

200V

240V

J, JTX, JTXV IN5551

400V

460V

Peak
Inverse

Type

J, JTX, JTXV IN5552

600V

660V

J, JTX, JTXV IN5553

800V

880V

*Measured in a test circuit IF :::=O.5A, IR

=

Peak Forward
Voltage
Max.
Min.

I

O.6V

1.2V

@

= 9A(pk)

IF

I

u:

;::

5

0
W I0: Z
W
W 0:
0:

"'"

I
L = .125.\.

L =~

0: U
W

"

>

L' =
L

l

I
Lengt~

""

55
Tl -

75

95

115

135

~!

16
14

::;; i=

12
10

cr. -

~i

6

~~
_ en

I

,=.~

18

I

~

-..........: ~

35

.:;
I-

.2

z

w

0:
0:

,

-L

- ---------

10
20

--

-" 50
100
200

SOO

25

I
150

75

100

125

150

175

LEAD TEMPERATURE ('C)

Typical Forward Current vs.
Forward Voltage
10,000
5,000

1,000

/'

25'C

;<'500

.§.
Izw

V

0:
0:

::J

75'C

50

0
C
0:

20

«
;:

..I

V

200
100

11

10

0:

0

125'C

-'

1

so

100

f-t-'I----H-+-~-+--m

0

t"

0.25
Ve -

Characteristic Wave Form

-1

0.5

0.75

1.0

1.25

1.5

FORWARD VOLTAGE (V)

Reverse-Recovery Circuit

~-

50

n

10 II

1"\

OA

+
_

-O.25A

-=-

/

\ 1/

25Vdc

(APPROX.)
I Q
NOTE3

1\
-LOA

50

Tl -

% OF PIV

+O.5A

I

2,000

.5

1000

= .500

2~-=t=1~~~

175

..--

:::J

'"I

= .375

4

~

155

L

I

~ E

50'C

U

w
en
0:
w
>
w

r~~" "O~: •

x en

LEAD TEMPERATURE ('C)

.01
.02
.05
.1

2.0ps

-- L= '~50_~§-_=:j

Typical Reverse Current vs. PIV

:<

75pA

Maximum Power Dissipation
vs, Lead Temperature
20

"-- r--.." "-. 1'--

I

'"

I
Lead

~frlm Body

"

= .750_ I'-....
I

l.OpA

l.OA, 'REC:::= O.2SA

'"

I'--.Ly
f-L
I

:::J

100'C

(8.3ms)
1.3V

Maximum Current vs, Lead Temperature
c
w

25°C

Maximum
Reverse
Recovery
Time*

H-'cm

SET TIME BASE
FOR

NOTES:
1. Oscilloscope; Rise time / 3ns; input impedance = 50$1.
2. Pulse Generator: Rise time ~~- 8ns; source impedance lOU.
3. Current viewing resistor, non-inductive, coaxial recommended.

SOOns/em

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEAS,'NT STREET. WA-' ERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924-1235

2-22

PRINTED IN U.S.A

RECTIFIERS

IN5614, IN5616, IN5618,
IN5620, IN5622
JAN, JANTX & JANTXV

Standard Recovery, 1 Amp
Military Approved
FEATURES
• Qualified to MIL-S-l9500/427
• PIV: to lOOOV
• Controlled Avalanche

DESCRIPTION
This series of medium power general
purpose rectifiers can be used in the
most demanding military supplies.
Rugged mechanical integrity and tight
electrical parameters make them
particularly useful.

ABSOWTE MAXIMUM RATINGS
Peak Inverse Voltage

Type

200V
400V
600V
BOOV
tOOOV

JAN, JANTX & JANTXV IN5614
JAN, JANTX & JANTXV lN56l6
JAN, JANTX & JANTXV lN56lB
JAN, JANTX & JANTXV lN5620
JAN, JANTX & JANTXV lN5622

Maximum Average D.C. Output Current
................... 1.0A
@ TA = 55°C
........ O.75A
@ TA =100°C ............... .
Non-Repetitive Sinusoidal
. ..............
............ 30A
Surge Current (8.3ms)
to +175°C
Operating Temperature Range
.... ................
. ..... _65°C to +200°C
Storage Temperature Range ...... .
............. 38°C/W
Thermal Resistance 9 Jl @ L = %"
See Lead Temperature
Derating Curve

.................. .. ........... -wc

MECHANICAL SPECIFICATIONS
J, JTX; JTXV IN5614, IN5616, IN5618, IN5620, IN5622

r
=",,1::

BAND INDICATES
CATHODE END .. ~

.l55TYP.
3.9mm

)i.

c::=::J

178mm

]I

r-:, y

.085 MAX.
2.16mm

I

6.35mm -

BODY A

+

L
'-

.030±.001
O.77mm ±.03

.015~~~P'

THESE OEVICES ALSO AVAILABLE IN·SURFACE'MOUNT PACKAGE. SEE SECTION 11.

n
L.:::Jn
1/79

2-23

SEMICONDUCTOR
PRODUCTS

_UNDTRODE

JAN, JANTX, JANTXV lN56l4, lN56l6, lN56l8, lN5620, lN5622

ELECTRICAL SPECIFICATIONS  50
u

I
c:--

20
10
S

~

"'!Ii"

1/

/

2

.~~

:>

.2
.5
1

u

~.

(,

.2.4.6.811.21.4

v,

+lOO°C

2
5

-VOLTAGECV)

f

~

10
20
50
100
200
500
1000
150

II I

II

25°C

ffi

a:
a:

y_~,CJ"CJ
,,~:cW

I- 1-1··~

50°C

..J.-1""
+150"C

I

I

50

100
~o

PIV

Maximum Current
vs Lead Temperature
Maximum Power Dissipation
VS. Lead Temperature
ElO r-r-r-r-r-r-r-r-~r-r-~
~

..

~
z

I--l-l-l-l-l-l-t

9

~

in
~

c

::!a:
4

...ii:

~ 2

~~~~~~~~l-j-j-~

3

~

~~ Lt!frEt!t~~W

...
II:

~

1

100

T, -

125

150

L=

~
I

175

LEAD TEMPERATURE COC)

~..

~

c

a:

~
~

3

:>
u

6 I--~~l-l-l-l-l-r-r-~~

L=~

L~ "-

I'--~
1

"0 ~

i'---- ............

.2

............

25

50
T, -

l"I..

~

.5

o

75
100
125
150
175
LEAD TEMPERATURE COC)

UNITRODE 0 SEMICONDUCTOR PRODUCTS

sao PLEASANT STREET

0

WATERTOWN, MA 02112

TEL. (517) 92S.()4()4 0 FAX (517) 924·1235

2-24

PRINTED IN U.S.A.

RECTIFIERS
Military Approved, Fast Recovery, 1 Amp

FEATURES
• Qualified to MIL-S-19500/429
• PIV: to 600V
• Controlled Avalanche

IN5615,lN5617,lN5619
JAN, JANTX &JANTXV

DESCRIPTION
This series of military approved rectifiers is
useful in many military applications where
fast recovery and medium power are
required. The 100% screening requirements
in the "TX" version combined with the
unique Unitrode construction assures the
highest degree of reliability.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

Type

200V
400V
600V

JAN, JANTX, JANTXV IN5615
JAN, JANTX, JANTXV 1N5617
JAN, JANTX, JANTXV 1N5619

Maximum Average D.C. Output Current
@ TA = 55'C
...................... .
................ 1.0A
@ TA =100'C .................... .
.................... 0.75A
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
... ... ........... ....... 25A
Operating Temperature Range ....
....................................... -65'C to +175'C
Storage Temperature Range
..... -65'C to +200·C
Thermal Resistance 8 Jl ..... .
. 38'C/W
See Lead Temperature
Derating Curve

MECHANICAL SPECIFICATIONS

BAND INDICATES
CATHODE END

~

r

.155TYP.
3.9mm

J, JTX, JTXV 1N5615, 1N5617, 1N5619

r

BODY A

.085 MAX.
2.16mm

[====~~~===t~~~~~~~~~!~~
11
L
::J c:::::::J
~.~t

c::::=1 z:

l~

1_ .700 MIN.
r--17.8mm

.250 MAX~
6.35mm-

+

L

.030±.OOl

O.77mm ±.03
055 TYP.
'-- . 1.4mm .

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONOUCTOR

~ PROOUCTS

2-25

_UNITRDDE

JAN, JANTX, JANTXV 1N5615, 1N5617, 1N5619
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Minimum
Maximum

Maximum

Breakdown

Forward

Reverse

Voltage
@SO/LA

Voltage

Current

Reverse
Recovery
Time*

Reverse

PIV

Type

J, JTX, JTXV 1N5615

. 200V

220V

J, JTX, JTXV 1N5617

400V

440V

J, JTX, JTXV 1N5619

iioov

660V

*Measured"in Circuit IF = lkA, IR = lA, I REC

=

Max.

Min.

1.6V(pk)
@3.0Adc
tp=300l's

O.BV

2S'C

lOO'C

O.5I'A

251'A

~

:>
Q

L=~

~

II:

............ 1---..

II:

~
I

.2

so

75

T, -

~

iii
!!? 6
Q

II:

~

4

It

3

::;;
:>
::;;

;;:

100

125

I.k

SO

.5

ISO

Ip(ma,,=

~..
~.. ".37S.........
/
~

100
200
500
1000

o

+1So'C

ISO

100

50
'% PIV

175

Typical Forward Voltage
¥s. Forward Current
10K
5K

T,-T~_

2K
~ IK
S500

I ~)JL 1 L 1= lead Length
'1- from Body

I

50
T, -

75

I

,-L _ .500"

125

II

:> 50

V

OJ

--

I 20
-- 10

V

~~~~
/{' ~~~ f?1
/J

:f-

ISO

.2

175

!ill

1/ '/7

~

~ 100

",L=I,7S()"

100

~

;;; 200

-.l J"-I-..: ~ .......
~l(O~ "...::3 :::::~:::-.

.. 0
::;;
25

·t~lL

LEAD TEMPERATURE ('C)

I I
I I

9

I

+25'C ~

2

Maximum Power
vs. Lead Temperature

~JO

50'C

IA

5
10
20

~

..........

25

i5

'"

I

r----.. ~ ~ t\.

1

25pf

!5

.. L~ ~ -0

'"
"'"

250ns

1

w'

I'".

"
;;:
'"

45pf
35pf

Typical Reverse Current VS. PIV

z

L =

150ns
150ns

.0001
.0002
.0005
.001
.002
.005
.01
.02
!z_.05
w  c:::::=J

~,,~~~17.8mm

6.35mm

BODY A

r: +

.085 MAX.
2.16mm

L

..

.030±.OOI
O.77mm ±,03

'-- .055 TYP.
1.4mm

1.625 MIN.
41.3mm
Typical Weight - 0.22 grams

1N5807-1 N5811

BODY B

BAND INDICATES
CATHODE END

r:

.145 MAX.
3.68mm

~c===~t=~~~~\~~~1~~~~j

L

.040±.001
1.02mm±.03

.115 TYP.
2.9mm

1+-------=25~04~~"-·------;~
TYpical Weilbl - 0.75 Brams

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONOUCTOR

~ PROOUCTS

2-27

_UNITRODE

ID

1N58.o2-1N58.o6 1N58.o7-1N5811 1N5812-1N5816
MECHANICAL SPECIFICATIONS
lN5812-1N5816
L :!::.015
1 437

DO-4

~ '800=l r~Ol°l
405
Max

Max

430

,"~~.;;fI1 . .::~
078

Part Identification: Type number printed on metal case.
Polarity: Cathode to stud end
Max. Weilht: 7.0 Grams
Installation Precautions: Maximum unlubricated stud torque:
10 inch pounds

Thermal Resistance: 3.0·C/W
Dimensions in inches.

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Leakage
Current

Maximum
Forward

Type

PIV

1N58.o2
1N58.o3
1N5804
1N58.o5
1N58.o6
1N58.o7
1N58.o8
lN5809
1N581.o
1N5811
1N5812
1N5813
1N5814
1N5815
1N5816

5.oV
75V
100V
125V
15.oV
50V
75V
1.o.oV
125V.
150V
50V
75V
100V
125V
150V

@PIV
25'C
100'C

Voltage
Drop·

·Pulse width

=;

~

0

j;:

r--...

15n5

1.5V

15pf

.875@4A

51'A

150I'A

3.on5, l..o-l..o-.o.1A

15n5

1.5V

45pf

.9.o.o@ 1.oA

1.oI'A

750I'A

35n5, l..o-l..o-O.1A

15n5

1.5V

2.o.opf

Output Current vs. Case Temp.

Lead Lenct;h
from Body

""

4

"-

'-.,

""

50

75

15

II

100

'";::j;:

...u

ri

\
~ 0

125 150 175

"«...a:
>

TL -

LEAD TEMPERATURE ('C)

~
a:
a:
:;)
u

I

o
150

CASE TEMPERATURE ('C)

2-28

from Body

"\

""

...o
;::
...a:
...

l = ...." "

"'i-.
l=~H

~

\

12

L= lud L!nllh

10

l= "'":'\

j;:

«

125

"\

10

U

\
100

~ lAMP SERIES

~

...

5

o
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

20 AMP SERIES

1\\

10

Si ...a:

'\

""'"

0

@

3 _'"

""'" ""-\~\

25

... ...a:a:
0
::E
'"., 0

12

1\

...

:;)

~

~

~
z

'U

I

Output Current vs. Lead Temp.

20

I

r- l =.0.

"I
-

@-10V

25n5, .o.5A-.o.5A-O..o5A

6

l_ ... " ' "

I--

@lAlr=8ns

50pA

~

i'...

...
;::
...ua:
...
"«...a:
>

@ 1A Recover to 1V

I RfC

11'A

I
L

a:
:;)
u

'R'

Typical Forward
Recovery
Typical Junction
Vollage
Capacitance

250ms

2.5 AMP SERIES

...a:

If'

Typical Forward
Recovery Time

.875@lA

Output Current vs. Lead Temp.

...~
z

Maximum Reverse
Recovery Time

."

i'-..

8

'"

"I

'"

"\

@

~'"

"
"'-

a:
>

\

....
~

~

\
2

'\.1\
....... N.

.2

'\

o
25

50

75

~
::E
:u

100

0

125 150 175

175
TL - LEAD TEMPERATURE

(OC)

PRINTED IN U.S.A.

IN5802·1N5806

Typical Forward Current
vs. Forward Voltage
10

Typical Forward Current
vs. F.orward Voltage

1//VI

.5
,2

w

'"'"
u

:>

.05

I

I
:£

"

II

01

~

'"'":>

I
.5

"I

I

.005

.002

r-f- -Ib -L~~/t

.

I

II

.02
01

2

"I

~-r

34 ') 6 78.91011121]
V f - VOLTAGE (V)

1

2
I

:;:

~I

2 .3

.4

') 6
7 8 9 10 11 12 13
V, -VOLTAGE (V)

01

I

'2

3

J
4

')

6

Vf

Typical Reverse Current
vs. Voltage
001

1'/

m

Typical Reverse Current
vs. Voltage
OJ

2.HMP SERIES

Vi'

02

6 AMP SERIES

--

05

01

2Q AMP SERIES

",.",

~

z

w

'"'"

",

1
~

<.l

I

.:

-rr""""

10

""'

100

~

,...r-

T_ t-25 C

2

r-

10
.: 20

20

'rn

100

130)20110100 90 80 70 60 so 40 30 20 10
VOLTAGE IN % OF PIV

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEl. (617) 926·0404. FAX (617) 924·1235

1000
0

I(

100

1.--1-"

200

T1

'Tyr

+125 C

1000

so

130\2011010090 80 70 60
4030 20 100
VOLTAGE IN % OF PIV

2·29

l.--- V
T _ +75 C

200

..... "", ......

,.....",,~

'I

T=+75 C

_,I1Jc

f-

f-

'":>'"

f-"'"

iA-""'c

T _25'C

~

/'d5'C

:>

f- ...... --

7 8 9 10 11 12 13 14 1 J
VOLTAGE (Vj

02

,....1--' rlJ"h

I.--

-

Typical Reverse Current
vs. Voltage

01

1

II

/

'/

II

I

~

i-- I

:;:

I

II
02

1/

it

r-r ~

5

I

I /

001

I

17ill

~

f:I

II / II /
r-f- ~c 0,"

~

'"'"
:>

.~

,. ,.
f!

II

:£

/

05

/ /

10

II

/ /
r-r-

-'" .2

II

/[/
20

/

2

~

~ i~r
r-r- {! ~ !2, ~
,. I

~:;::~

20 AMP SERIES

;;;:?

'/1/1/

10

11/,/

.02

~~

10

III II!
!Z:

6 AMP SERIES

50

IN5812·1N5816

Typical Forward Current
vs. Forward Voltage
100

IOC

V-~

2.5 AMP SERIES

IN5807·1N5811

I"

100

l.---- V

75

25

VOLTAGE IN % OF PIV

PRINTED IN USA

IN5802·1N5806

Reverse,Recovery Time Circuit

IN5807·1N5811

IN5812-lN5816

CharacteristiocWaveform

-

I-

t"

tREe

1\

I

I

I

I.

'-'

SET TIME BASE
FOR 5 NS/CM

NOTES.
1. Oscilloscope: Rise lime ~ 3 "5; input impedance = SO !!.
2. Pulse Generator: Rise time ~ 8 ns; source-impedance 10 !!.

Multiple Sur.. Current Vs. Dur.tion

Forward Pulse Current vs. Duration
10.000

100

5,000

..,eo
z

5:
0:

"...

"- r--....

!iO:iO

~ 1.000

:::

"f'-.

.....,

500

0:

".

U

.. 40

~

100

~

50

......

~

o

.. 10

T MOUNT
@L....h= .."

~ tPrlR1ed CircUit

I I

10

50
10l's
u»"s
PULSE DURATION

.5

l.us

Jps

fIl"
-.'
IN5804.1N51!06

BACKSIDE CATHODE
CHIP
METALLIZATION
THIOlNESS
TOP .... AL

.0075

:00;;;

BACK

AU

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL (617) 926-0404 • FAX (617) 924-1235

IOms

I

2

5

10 20

50

100 200

500

ll)()O

CYCLES AT 60 Hz SINE WAVE

IN5809.1N5811

•

~~,

~

BACl

'\.
...........

ffi

:;iE~

1
L

VI

~ 12

= =
=
=

IF
I. O.5A
I.EC O.OSA
di/dt 65A1IL5 min.

lN5807
IN5809
IN5811

~
_

L _ Jla"

1\

= =
=
di/dt = lOOA/ps min.
IF
I.
l.OA
I. EC O.1A

25n5

r-...

'~

25

.875V Max.
@lA{pk)
.97SV Max.
@2.5A{pk)

30ns

~e Le~"h_

l=¥4"

o

150pA

L = ••
from Body

L_1fe"

::>
u

5ILA

1N5S02·5806

10

lOO'C

.8V Max.
@4A(pk)

Output CUrrent YS. Lead Temperature

\

2S'C

.875V Max.
@4A{pk)
.925V Max.
@6A{pk)

lN580)·5811

'\

Maximum
Reverse
Recovery Time

@PIV

Output CUrrent \IS. Lead Temperatura
12

...5

Maximum
Reverse Current
Forward Voltage
@ 2S'C
@ lOO'C

3 .•
2.4

1.2

175

*Maximum lead temperature in °C {TLl at point "L" from
body. (For maximum operating junction temperature of
175°C with equal two-lead conditions.)

" "'-\
"""

~\

o

25

175

Tl -LEAD TEMPERATURE ("C)

so

125
ISO
75
100
Tl - LEAD TEMPERATURE (·C)

Reverse-Recovery Circuit

~
175

Characteristic Waveform

....,

t"

~

fREe

!
T

!
I,

SET TIME BASE
FOR 5 NS/CM
NOTES:

1. Oscilloscope: Rise time '(; 3nsi input impedance = son.
2. Pulse Generator: Rise time ~ 8nsi source impedance IOS2.
3. Current viewing resistor, non-inductive, coaxial recommended.
lN5809.1N5811

lN5S04.1N5806

Jm=h1,

1bJ"

CHIP
>THICKNESS
0045
.0055

METALLIZATION
TOP .•.. AL
BACK ••. AU

PRINTED IN U.S.A.

JAN & JANTX IN5802-1N5806

Typical Forward Current vs. Forward Voltage

Typical Reverse Current VS. Voltage
JAN & JANTX 1N5807-5811

JAN & JANTX lN5807·5811
100

.01

50

.02

// / V
I / / L

10

~
...
z

/

/

2

/

UJ

0:
0:

l/l~1t
/ I

:J

'I

.2

.1

.01

II

II il

.1 .2

.3

'I

.6

100

T

.9

10

1

1.1 1.2 1.3

120

!z

.2

~

.1

'I

.05

,i: i:

"i-

V / II

.02

I

/

.01

I

.005

/ II

.002
.001

.1

I/'

V

--

T

...z

$J

Ii?
I

UJ

/V

0:
0:

a.5
I

1/

I

50

.2 .3 .4 .5 .6 .7 .8 .9 1 1.1 1.2 1.3
V,-VOLTAGE (V)

100

2-33

= +25'C

I-V I--

-

L

_f-'"

/

1

-"

T

= +7S'C

T

= +12S'C

~-I-

/1-'

10

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

~SoJc

_.05

..3 .1

II

I

,- V

.

I

I

a

.01

II II

I/lrAj¥-

:J

_/

100 90 80 70 60 50 40 30 20 10
VOLTAGE IN % OF PIV

.001

1/II '/ /
I / 1/

UJ

= +12S'C

-

Typical Reverse Current vs, Voltage
JAN & JANTX 1N5802-5806

...-:: 'i r/

/

~

1000

.7 .8

v/

-

-

,-

Typical Forward Current vs. Forward Voltage
JAN & JANTX 1N5802·5806

.5

= +7S'C
/

V,-VOLTAGE (V)

~

T

10

200

.5

= + 2S'C

-" 20

I
.4

1

2

T

I-~-~

0:
0:

II

/

~

!zUJ

/

I-- I-

:J

I

/ II /

.05
.02

/$J

& JC Ii?
i: i: -I- I
/
I
II
~

.5

TlTT

.1
.2

/

!I

Vf

V
y V

V
-'/ ~
/ ~

20

JAN & JANTX IN5807-1N5811

(
I
120

-

l.-

I--'" V

-

/'

100 90 80 70 60 50 40 30 20 10
VOLTAGE IN % OF PIV

a

PRINTED IN U.S.A.

IN5812,lN5814,lN5816
JAN, JANTX & JANTXV

RECTIFIERS
Military Approved
High Efficiency, 20 Amp

FEATURES
• Qualified to MIL-S-19S00/478
• Exceptional Efficiency
• Mechanically Rugged
• Low Thermal Resistance
• JAN, JANTX and JANTXV Available

DESCRIPTION
This series is suited for use as a power
. rectifier in switching regulator and high
frequency inverter/converter and other
appropriate equipment circuits where low
voltage drop and fast recovery times are
important.

CHIP
METALlIZATlON
THICKNESS TOP ••.. AL
~~
BACII ... AU

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

Type

SOV
l00V
lS0V

JAN, JANTX, JANTXV lNS812
JAN, JANTX, JANTXV, lNS814
JAN, JANTX, JANTXV lNS816

Maximum Average D.C. Output Current
@ Tc=100'C
@ T.=SS'C
Non-Repetitive Sinusoidal
Surge Current @ 8.3mSec
Thermal Resistance, Junction to Case ..
Operating Junction Temperature .
Storage Ambient Temperature

20A
... SA
........ 400A
.. ........................................... l.S'C/W
....... -WC to +17S'C
... -6S'C to +200'C

MECHANICAL SPECIFICATIONS
J, JTX, JTXV lN5812, lN5814, lN5816

~D

----.

~C....

I

~ .~

\....8
A-+--:--<1

-

"0.32
UNF·2A

t

_.. -.,.

I

G

H-/-- _.1.

mm

ins.
A

B

c
0
E
F
G
H

00-4

.078 MAX.
.437 , .015

1.98 MAX.

11.10 ,0.38

.405 MAX.
.800 MAX.

10.29 MAX.
20.32 MAX.
10.92,0.25
6.35 MAX.
10.77 MAX.
1.68 MIN. OIA.

.430, .010
.250 MAX.
.424 MAX.
.066 MIN. orA.

Nol•• :
1. Polarity is cathode-ta-stud.
2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque: 15 inch pounds.
4. Angular orientation of terminal is undefined.

n
L!::::::Jn
2-34

SEMICON. OUCTOR
PROOUCTS

_UNITRDDE

JAN, JANTX, JANTXV IN5812, IN5814, IN5816
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Minimum
Reverse
Breakdown
Voltage @ 100pA

Peak
Inverse
Voltage

Type

J, JTX, JTXV IN5812

50V

60V

J, JTX, JTXV IN5814

IOOV

nov

J, JTX, JTXV IN5816

150V

160V

Maximum Reverse
Recovery Time @
IF, JR, ht.Ee

-1.OA

35nsec 1.0A

2.2V

\

::>
u 10
::;
::>
::;

::;

!§

2

::;

1

u

5

::>

II

~" 02

1\

\

~O.l

0.05

~

i-

1-

II

J

0.01

0.1 .2 .3 .4 .5

~

~

.1

a

.2

~

.5

0:

OJ

J

-T' :::T

0:

I--'

-~ 10

20

7

I

IF;
High Zo

I

Ul

rl>,

(coaxial)

I

I

GE~~~~iOR
for'Ri
Low Zo' Fast t,

OSCILLOSCOPE

I+

2-35

t"

...1..If

I

NOTES:
1. Oscilloscope: Rise time ~ 3 ns; input impedance = 50 U.
2. Pulse Generator: Rise time::';; 8 nSi source impedance 1011.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEl. (617) 926·0404 • FAX (617) 924·1235

I I I
90 80 70 60 50 40 30 20 10 0
REVERSE VOLTAGE (% OF PIV)

Characteristic Waveform

D.U.T.

N."

+12S'C
+150'C

V, -

.6 .7 .8 .9 1.0 1.1 1.2 1.3 1.4 1.5
YF-VOLTAGE (V)

/

no 100

130 120

~

I

=
=

II

I

Reverse-Recovery Time Test Circuit

con:~~~~yc~:ent

k

TJ
-T J

Ii
50

-- -- /
--

+100'C

!

>
OJ

I~

II

II

1/

0.02

175

~ .05

:CJ~

...

T J _+2S'C

.01
.02

I-

I

f--f-- ~()
c

u

g
....
150:

1== 150'
f=12:C
75'C

0:

~

./

\~~'C

0:

25'C

V ./ /

=>

~1O.0

Jo-:--55'C

1'>'C;

ffi

0:

e

~

J,

1
.1

.....

1.0

<:Ie.

'1:4,
:\)~

0.1
.1

.2

.3

.4

.5

.6

.7

.8

.9

1.0

10

20

30

40

50

VA-REVERSE VOLTAGE (V)

V,-FORWARD VOLTAGE (V)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

o

-'><;

2-37

PRINTED IN U.s.A.

RECTIFIERS

IN6304-1N6306
JAN, JANTX, JANTXV

High Efficiency, 70A

FEATURES
•
•
•
•
•
•
•
•

DESCRIPTION

High Continuous Current Rating
Very Low Forward Voltage
Very Fast Switching Speeds
High Surge Capability
Low Thermal Resistance
Mechanically Rugged
Both Polarities Available
Qualified to MIL-S-19500/550

. The IN6304 Series is specifically designed
for operation in power switching circuits
operating at frequencies of at least
.20KHz. The very low forward voltage and
very fast recovery time make them particularly suited for switching type power
supplies.

M~TAHll"'TlO"l

TOP

AL

BACK •. AU

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, IN6304 . . . . .. . . . . ... . . . .• .. . . . . .. . . . ... . . . . . . . .. . . . . .. . .. 50V
Peak Inverse Voltage, IN6305 . . . . . ... . .. . . . . . . . ... . .. .. . . . . .. . . .. . . . ... . ... . .. lOOV
Peak Inverse Voltage, IN6306 ......... .... .. .. .. .. .. . .. . .. .. .. .... .... .. ...... 150V
Maximum Average D.C. Output Current at Tc = lOO°C ............................ 70A
Non-Repetitive Sinusodal Surge Current 8.3ms .................................. 800A
Thermal Resistance, Junction to Case ....................................... 0.8°C/W
Operating and Storage Temperature Range ........................... -65°C to +175'C
Operating and Storage Temperature Range (JEDEC types) ........... -55°C to +175°C

POWER CYCLING

SWITCHING CHARACTERISnCS

These devices possess the unique ability to pass many thousands
of cycles of a stress test designed to evaluate the integrity of the
bonding systems used in the construction of power rectifiers.
In this stress test, the case of the device is not heat sunk. Full rated
'forward current is supplied to force a case temperature increase at
least 75°C, at which time, the current is removed and the case
allowed to cool. The cycle is repeated a minimum of 5,000 times to
simulate equipment being turned on and off. Extended powercycling
tests demonstrate a product capability in excess of 25,000 cycles.

The switching times of these ultra-fast rectifiers increase relatively
little, with temperature or at different currents. Even in severe
applications, such as catch diodes for switching regulators and
output rectifiers for high frequency square wave ~verters, these
devices switch many times faster than the fastest associated
transistors. Thus, the stresses on and powers dissipated in the
switching transistors are substantially less than when using other
rectifiers.

MECHANICAL SPECIFICATIONS
IN6304-1N6306

DO-203AB

(00-5)

E

1j428
UNF 2A

K
L

6670lA MAX

1 000 MI\X
450 MAX

26 940lA MAX

2540 MAX
II 43 M A X - -

-M 438- 015
1113.!038--~r-.E7B MAX _-=-~~_MAX

_----=

Notes:

1. Standard polarity is cathcx:le-to-stud.
For reverse polarity (anode-to-stud) add suffix "R", ie. lN6304R.

2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque: 20 inch pounds (20 kg, em).
4. Angular orientation of terminal is undefined.

nn

L.L:::::JJ
4/82

2-38

SEMICONDUCTOR
PRODUCTS

,_UNITRODE

JAN. JANTX. JANTXV lN6304·1N6306

ELECTRICAL SPECIFICATIONS

Type

Maximum
Forward Voltage
VF

VR

lN6304
lN6305
lN6306

50V
lOOV
l50V

Te = l50°C

Te = 25°C

Te = l50°C

.975V
@
70A
tp = 300pS

.840V
@
70A
t p = 300pS

25pA

30mA

.840V
@
70A
tp = 300ps

25pA

30mA

1.18V
@
l50A
tp = 300ps

Maximum
Reverse
Recovery
Time
t"

IR

Te = 25°C

.975V
@
70A
tp = 300ps

50V
lOOV
l50V

J. JTX. JTXV lN6304
J. JTX, JTXV lN6305
J. JTX. JTXV lN6306

Maximum
Reverse Current

50ns
lA·lA·O.lA

50ns'"
60ns'21

'" I, = O.5A. I. = IA. I. EC = O.25A. di/" = 85A1lls (min.).
I'M =70A. di/", = 130A/lls.

121

Type

VR

J. JTX. JTXV lN6304
J. JTX. JTXV lN6305
J. JTX. JTXV lN6306

50V
100V
l50V

Maximum
Forward
Voltage

Maximum
Forward Recovery
Time

IFM

;=

l5ns
lA, t, = 8ns

IFM

~

70

UJ

'"'"
u
...::J

50

;;J

...::J
0-

r--....

~

30

$

220r-~~-r----~k------r~~~

If Duty Cycle

I-

~ 180 I-------I--"o,~=+--....,.---I-----___l

~

::J

u

I-

::J

a.

I-

::J

o

~

0

I
_0

10
100
Te -

@-lOV
600pF

2.2V
= lA. t, = 8ns

Peak Output Current vs.
Case Temperature

Output Current vs.
Case Temperature

...z

Maximum
Junction
Capacitance

~ 100
a.

I

1

""

125
150
175
CASE TEMPERATURE (OC)

60~~~~~--~~~~~~~--1

20

10, Average of Rectjfied-""'-r-~:"""'d-'''''t:i~''tti
Half Sine

~0~0~--~12~0----~14~0----~16~0--~~
T, - CASE TEMPERATURE COC)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-39

PRINTED IN U.S.A.

JAN, JANTX, JANTXV IN6304·1N6306

Forward Current
vs. Forward Voltage

Typical Reverse Current
VS. Reverse Voltage
.001
.002

100 r---+---~--~----~~~~~---;

~

50

z:

.005
.01

I---+--;--+-+-+-I--if--+---\

.02

<"
oS

'"
0:
0:

13o

20

1---+--;--/0

~ 10

0:

:>
u

.5
1

"'II:c::

0:

e

....z

.05
.1
.2

I----+---~_I

I
-"

-- --

TJ =2S'C

r- -/r- p-

TJ

.L

10
20
0.2

0.6

0.4

v, -

0.8

1.0

1.2

50

1.4

-

I-:: r-

-

+100'C

~~'C

)

i-"'" 1:=1""='tlsh'c

lJ.J.

LLl

II

I I

130 120 110 100 90 80 70 60 50 40 30 20 10 0
VOLTAGE IN % OF PIV

FORWARD VOLTAGE (V)

Maximum Forward Surge
VS. Number of Cycles

$
....z

I'"
600

0

~

I
I

t'-...
400

I

-~
200

e"'
.
'"
.

I

'"c::c::

:>

Thennal Impedance
vs. Pulse Width

~

800

!\...JL

u

I

z
0

I

Do

'"

;:;!

oJ

~

::;

~ICYCTE

I

.02

N-

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

i-"

V .....

i-"

.1

.05

VV

V

~ .01

N

2

/'

.2

II:

"'....X

r-- t---

1-1-

.5

.01.02 .05.1 .2 .5 1 2 5 10 20 50100200
tp - PULSE WIDTH (mS)

1000

200

Reverse·Recovery Circuit

Characteristic Waveform

..L

-

t ..

r-

I,

IREe

I

\

r

I
I,

SET TIME BASE
FOR 5 NS/CM

NOTES:
1. Oscilloscope: Rise time ~ 3ns; input impedance = 5On.
2. Pulse Generator: Rise times 8ns; source impedance = 10n.
3. Current viewing resistor, non·inductive, coaxial recommended.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEl. (617) 926·0404 • FAX (617) 924·1235

2·40

PRINTED IN U.S.A.

POWER SCHOTTKY RECTIFIERS
50A Pk, 45V

lN6391
JAN, JANTX, JANTXV

FEATURES

DESCRIPTION

•
•
•
•
•
•
•

The IN6391 has a Schottky barrier
junction and is ideally suited for output
rectifiers and catch diodes in low voltage
power supplies. Rugged design absorbs
stress that can damage glass-to-metal seal
during installation and use.

Very Low Forward Voltage
Low Recovered Charge
Rugged Package Design (DD-4)
High Efficiency for Low Voltage Supplies
45V Blocking @ Rated Tjmax
54V Repetitive Surge Voltage
Qualified to MIL-S-19500/553

ABSOLUTE MAXIMUM RATINGS
Working Peak Reverse Voltage, VRW" ..•.•...••.•.••.•...•..........•........•.•.. 45V
DC Blocking Voltage, VR .............••....•.........•............•........•...• 45V
Peak Repetitive Surge Voltage, VRs" @ IR" .....•.................••.....••..•.... 54V
Average Rectified Forward Current, 10 @ Te = 125·C •...•.....••.....•.•......•... 25A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz, 50% Duty Cycle),
IFRM @ Te = 125·C .•..•........••••••...••...•....................••.....•.• 50A
Non-Repetitive Peak Surge Current (8.3ms), IFSM .• _•......•••...•...••.•••.•..•. 600A
Peak Reverse Transient Current, IRM ..•..•.•..••..•.•..............•...••.....•.•• 2A
Operating and Storage Temperature Range .•....•.....•.....•.....• -55·C to + 175·C
Thermal Resistance, Junction to Case, R8Je ...............•...•.•.••.••.••.• 2.0·C/W

MECHANICAL SPECIFICATIONS
JAN, JANTX, JANTXV IN6391

INCHES
A .078 MAX.
B .437' .015
C .405 MAX.
o .800 MAX.
E .430 •.010
F .250 MAX.
G .424 MAX.
H .066 MIN. OIA.

NOTES:
1. Cathode is stud.
2. All metal surfaces tin plated.

00-4

MILLIMETERS
1.98 MAX.
11.10' 0.38
10.29 MAX.
20.32 MAX.
10.92' 0.25
6.35 MAX.
10.77 MAX.
1.68 MIN. OIA.

3. Maximum unlubricated stud torque: 10 inch pounds.
4. Angular orientation of terminal is undefined.

nn

SEMICONDUCTOR

~ PRODUCTS

4/83

2-41

_UNITRDDE

..

JAN, JANTX, JANTXV 1N6391
ELECTRICAL CHARACTERISTICS (TCASE

=25°C)

Characteristic

Conditions

Symbol

Limit

Units

Maximum Instantaneous
Reverse Current

iR

15
40
400

mA
mA
mA

Te =25°C, VR=VRW..
Te = 125°C
Te = 175°C
Pulse Width =400ps
Duty Cycle = 1%

Maximum Instantaneous
Forward Voltage

VF

0.44
0.68

V
V

iF =5A, Te =25°C
iF = 50A, Te =25°C
Pulse Width =300ps
Duty Cycle = 1%

Capacitance

C,

2000

pF

VR = 5.0V

Typical Reverse Current
vs Reverse Voltage

Typical Forward Current
vs Forward Voltage

.c .- t~·~.c

'\1~

/. ~~

g

.

I-

10

9

~c

<
,§.

..
I-

I

I'

o

::l
U

I
.!!

I

/ ~II I
0.2

10

~

II/ ~
V
/

::l
U

0.1

100

.-~1

100

~

1000

0.1

0.4

v, -

0.8

0.6

.01

1.0

0

20

VOLTAGE (V)

40

60

80

100

120

%OFV.

V"MAlI) Rating vs Case Temperature
50
45

\

40
35

~

.
I

30

~

25

>

20

1\

\
\
\
\

15
10

-50

-25

25

50

75

100 125

150

175

CASE: TEMPERATURE ('C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN; MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235 .

2-42

PRINTED IN U.S.A.

POWER SCHOTTKY RECTIFIERS
120A Pk

IN6392

JAN, JANTX, JANTXV

FEATURES

DESCRIPTION

•
•
•
•
•
•
•
•

The lNG392 Schottky barrier power rectifier is ideally suited for output rectifiers
and catch diodes in low voltage power
supplies. The Unitrode high conductivity
deSign, using a heavy copper top post and
4 point crimp, ensures cool thermal
operation and low dynamic impedance.
Rugged design absorbs stress that can
damage glass-to-metal seal during
installation and use.

Very Low Forward Voltage (O.G at GOA, l25°C)
Low Recovered Charge
Rugged Package Design (00·5)
High Efficiency for Low Voltage Supplies
Low Thermal Resistance (1.0°C/W)
High Surge Current (800A)
Low Reverse Current (GOmA at rated VA at l25°C)
Qualified to MIL-S-l9500/554

ABSOLUTE MAXIMUM RATINGS
Working Peak Reverse Voltage, VAWM ........... _................................. 45V
DC Blocking Voltage, VA ........................................................ 45V
Peak Repetitive Surge Voltage, VASM @ lAM ....................................... 54V
Peak Repetitive Forward Current
(Rated VA, Square Wave, 20kHz, 50% Duty Cycle), IFAM ....... 120A (at Te ll5°C)
Average Rectified Forward Current, IFIAVI ......................... GOA (at Tc = ll5°C)
Non-Repetitive Peak Surge Current (8.3ms), IF8M .............................. l,OOOA
Peak Reverse Transient Current, lAM .......... : ................................... 2A
Operating and Storage Temperature Range ......................... -55°C to + l75°C
Thermal Resistance, Junction to Case, ROJe ................................. 1.0°C/W

=

,
2

-1010

.,.
(~)

ISCHonKVDIE

2~~6Y~~PrisgN(ro~~~RrACEJ
3

~~~HB10l~~~~i~ bC;1'6~~~ SURFACE)

MECHANICAL SPECIFICATIONS
JAN, JANTX, JANTXV IN6392

A
B
C

0
E
F
G
H

J
K
L
M
N

INCHES
.225' .005
.060 MIN.
.156' .020
.156 MIN. FLAT
.667 DlA. MAX.
.090 MAX.
.677' .010
.375 MAX.
. 140 MIN. DIA.
1.000 MAX.
.450 MAX.
.438 •. 015
•078 MAX.

00·5

MILLIMETERS
5.72' 0.13
1.52 MIN.
3.96' 0.51
3.96 MIN. FLAT
16.94 DIA. MAX .
2.29 MAX.
17.20.0.25
9.53 MAX.
3.56 MIN. DlA .
25.40 MAX.
11.43 MAX .
11.13' 0.38
1.98 MAX .

NOTES:
1. Cathode is stud.
2. All metal surfaces tin plated.

3. Maximum unlubricated stud torque: 30 inch pounds (35 kg. cm).
4. Angular orientation of terminal is undefined.

nn

SEMICONDUCTOR

~ PRODUCTS

4/83

2-43

_UNITRODE

JAN, JANTX, JANTXV IN6392

ELECTRICAL CHARACTERISTICS (TCASE

= 25°C)
Symbol

Limit

Units

Maximum Instantaneous
Reverse Current

Characteristic

iR

20
60
600

mA
mA
mA

Conditions·

Maximum Instantaneous
Forward Voltage

v-

0.47
0.68
0.82

V
V
V

iF = lOA, Te = 25°C
iF = 60A, Te = 25°C
iF = l20A, Te = 125°C
Pulse Width = 3OOl1s
Duty Cycle = 1%

Maximum Capacitance

C,

3000

pF

VR = 5.0V

VR = VRWM
Te = 125°C
Te=175°C
Pulse Width = 400jls
Duty Cycle = 1%

Typical Forward Current
vs Forward Voltage

Typical Reverse Current
vs Reverse Voltage
1000

~~

100

;:;.....-

-

175°C

g
>15

'"'"

I - '"""""I

:;( 100

.s

//

10

=0

F

«

t-75°C

~12:C

"51

25°C

/ A

I

3:

'"fi'

150°C

§
'"'"
" 10.0

150°C

125°C

"''"ffi

75°C

t:;

.1

1

I

.1

o

.1

./

-I-"

=0

-55°C

I

1.0

,../

~,o~">oC

.2

.3

.4

.5

.6

0.1

.s

.7

.9

1.0

L

o

10

V,-FORWARD VOLTAGE (V)

20

30

40

50

60

70

SO

90

100

V,-REVERSE VOLTAGE (% of V"".)

Maximum Current
vs Case Temperature

VR(MAX) Rating vs Case Temperature
50

150

45
40

120

25
t:>-

~~

"'~

>'"

\.
\1\.

80

~~

150

20

10

'\.

I\.
175

-50 -25

T, - CASE TEMPERATURE (0e)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926·0404· FAX (617) 924·1235

\

15

"\

125

25

::
"\

100

30

I

I\.

40

~

'"':;0
>

13:

.'"
.1f:2

0

1

35

I\.

25

50

75

100

125

150

175

CASE TEMPERATURE (0C)

2-44

PRINTED 1N U.S.A.

HERMETIC SCHOTTKY
RECTIFIERS

IN6492, JTX, JTXV

41m1p, 45 Volts
DESCRIPTION
The IN6492 hermetic Schottky rectifier is
ideally suited for output rectifiers and catch
diodes in high efficiency, low voltage, high
reliability switching power supplies.

FEATt1RE&• Qualified to MIL-S-19500/567
• Extremely Low VF and IR
• High Surge Capability
• Low Recovered Charge
• Rugged Hermetic Package, No Pressure
Contacts - -

ABSOLUTE MAXIMUM RATINGS
Peak Repetitive Reverse Voltage, VRRM ...................................... 45V
Working Peak Reverse Voltage, VRWM ....................................... 45V
DC Blocking Voltage, VR ................................................. 45V
Non-Repetitive Peak Reverse Voltage, VRSM .................................. 54V
Average Forward Current (50% Duty Cycle), IF(AV), TA = 25"C .................... 1.2A
Average Forward Current (50% Duty Cycle), IF(AV) .............................. 4A

TCASE = lOO"C
VRWM = 45V
Non-Repetitive Peak Surge Current, IFSM .................................... BOA
8.3ms, Half Sine Wave
Operating and Storage Junction Temperature Range ................ -65"C to +175"C
Thermal Resistance, Junction to Ambient, R8J.A........................... 175"CIW
Thermal Resistance, Junction to Case, R8J•c ............................... 12"C/w

MECHANICAL SPECIFICATIONS

:f,.
.

"'m"',
If'fT'inliI

TO-205AF (TO-39)
BonOMVI[W

~'~08110D151

CAI'HODE

'MODE

D'"
iOliOZOI

All Dimensions in Millimeters and Inches

nn

SEMICONDUCTOR

~ PRODUCTS

3/89

2-45

_UNITRDDE

IN6492, JTX, JTXV
ELECTRICAL CHARACTERISTICS (at TA = 250C unless noted)
CHARACTERISTICS

SYMBOL

LIMIT

UNITS

Maximum Reverse
Leakage Current

IRMI
IRM2
IRM3

2.0
20
200
20
2.0

mA
mA
mA
mA
A

Maximum Forward
Voltage

VFMl
VFM2
VFM3
VFM4

0.92
0.68
0.56
0.63
0.48

V
V
V
V
V

IFM
IFM
IFM
IFM
IFM

CT

450

pf

VR = 5V

IRM4

Capacitance

Surge Current

CONDITIONS
VRM = 45V 1
VRM = 45V, TA = 125°C
VRM = 45V, TA = 175°C
VRM = 45V, TA = -55OC
VRSM = 54V
=
=
=
=
=

8A (pk) 1,2
4A(pk)
2A(pk)
2A (pk), TA = -55°C
lA (pk)

IFSM = 80A (pk)
VRM = 45V (pk)
10 = 0.75A
10 surges of 8.3mSec at 1 minute intervals

ISURGE

1 Pulse width = 400~Sec, duty cycle = 1%
2 Measured with anode and cathode lead length of 0.2" from case

Output Current vs R.J.A
T........ = 25°C, 50% Duty Cycle

Typical Junction Capacitance
vs Reverse Voltage
1000 - - - -

G:' 800

S

5:
I

~

~

W

0:
0:
::J

w
()

z

~

4~

()

~

CE
()

35V

!~ t-....

Cl.

~

o

50

75

400

Z

0

~

25

600

U

5z

~

100

~ 200

125

150

\

'"

10

175

Typical Forward Current
vs Forward Voltage

125"C

()

a

0:

~
0:

~I I

II

::J

lA
.8A
.6A

\

~

.IA

o

I

I

50

175·C

-r
zr-

5:

::J
()

0:
0:

ImA

w

0:
W

()

>
w 100.A

::J

0:

Cl.

r-

./

I

::J

0

I

-

125·C

(J)

::J

~

lOrnA

W
0:
0:

zw

II I

u.. .4A
I
2:- .2A

40

Typical Reverse Current
vs' Reverse Voltage

7

r-

0

30

100mA

r-

25°C

20

Output Current vs Ambient Temperature
50% Duty Cycle Application (\'(O'll and VOOM)

.,

-

t--

VR - REVERSE VOLTAGE - (V)

R8J.II -.:: THERMAL RESISTANCE - (OCIW)

lOA
8A
6A
r- 4A
z
w
0:
0: 2A

-

.EO IO.A

""25·C=

2.

1=

<'!.

2:-

10

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0

20

30

40

50

VR - REVERSE VOLTAGE - (V)

VF - FORWARD VOLTAGE - (V)
25

50

75

100

125

150

175

TA - AMBIENT TEMPERATURE - (OCl

UNITRODE • SEMICONDUCTOR PRODUC,S
580 PLEASANT STREET·WATE/lTOWN. MA 02172
TEL. (617) 926·0404· FAX (617).924·1235

PRINTED IN USA

RECTIFIERS

1N6620-1 N6625

HIGH RELIABILITY, f..IVf~TM SERIES
2.0 AMPS
FEATURES

DESCRIPTION
This state-of-the-art high efficiency rectifier is ideally suited for applications requiring high
blocking voltage. It has the ability to switch significant current with minimal switching
transients and losses. leakage current at high junction temperatures has been minimized
achieving exceptionally low reverse losses. An ultra stable process ensures high reliability
and long life. This device is designed for a wide variety of applications including high
frequency switching power supplies.

• Ultra Fast Recovery Time
• Controlled Avalanche
o High Temperature Operation with
low Loss
.. Minimal Recovery Transients
• Low Capacitance
• low Turn-On Voltage
o Non-Cavity Metallurgically Bonded
Package

ABSOWTE MAXIMUM RATINGS

REVERSE
VOLTAGE

AVERAGE
DC OUTPUT
CURRENT
T L =55°C, L=3/S"

AVERAGE
DC OUTPUT
CURRENT
TA=25°C

IN6620

200V

2.0A

l.2A

20A

IN6621

400V

2.0A

l.2A

20A

IN6622

600V

2.0A

l.2A

20A

IN6623

BOOV

1.5A

l.OA

20A

IN6624

900V

1.5A

l.OA

20A

IN6625

lOOOV

1.5A

l.OA

15A

TYPE
NUMBER

PEAK
FWD_SURGE
CURRENT
t p =S.3ms

Operating and Storage Temperature Range -65°C +175"C.
Thermal Resistance, 8JL • See Le~d Temperature Derating Curve. (Figures 13, '14)

MECHANICAL SPECIFICATIONS
BAND INDICATES
CATHODE END

~

r

·155TYP.
3.9mm

IN6620-1N6625

i.

BODY A

.085 MAX.
2.16mm

~C===~C=~~~~\~~I~~~~t

L

.030±.OOl
0.77mm ±.03

.055TYP.
l.4mm

Available in surface mount package; consult factory for information.

nn

SEMICONDUCTOR

~ PRODUCTS

2-47

_UNBTRDDE

IN6620-1N6625
ELECTRICAL SPECIFICATIONS (AT 25"C UNLESS NOTED)
REVERSE
BREAKDOWN
TYPE
VOLTAGE
NUMBER
@50"A
220V
IN6620

FORWARD
VOLTAGE

FORWARD
VOLTAGE

REVERSE
RECOVERY'
REVERSE REVERSE
JUNCTION
IRM(rec)
VFRM
LEAKAGE LEAKAGE
TIME
CAPACITANCE 2A-I00Al"s IF=IA
@-10V
VR=50V t,=10ns
TA=25"C TA=I50"C 0.5A-l.0A-.25A*

1.6V@2A

1.4V@1.2A

0.5"A

200"A

30n5

8pt

4A

6V

IN6621

440V

1.6V@2A

1.4V@1.2A

0.5"A

200"A

30ns

8pt

4A

6V

1N6622

660V

1.6V@2A

1.4V@1.2A

O.5"A

200"A

30ns

8pt

4A

6V

1N6623

880V

1.8V@1.5A

1.55V@1.0A

0.5"A

200"A

50ns

8pt

6A

15V

1N6624

99QV

1.8V@1.5A

1.55V@I.0A

0.5"A

200"A

50ns

8pt

6A

15V

1N6625

1l00V

1.95V@1.5A

1.75V@1.0A

1.0"A

3oo"A

50ns

8pt

6A

20V

..

• See FIgure 20 for -charactenstlc waveform.

OPTIONAL HIGH RELIABILITY SCREENING
The following tests are perfonned on 100% of the devices, per table" of MIL-S-195oo
SCREEN

MIL-STD-750
METHOD

-

.

CONDITIONS

1. High Temperature Life (Stabilization Bake)

1032

24 Hours @ TA = 175"C

2. Thermal Shock (Temperature Cycling)

1051

C, 20 Cycles @ TA = (-65 to +175"C).

3. Hermetic Seal
a. Gross

1071

4. High Temperature Reverse Bias

1038

5. Interim Electrical Parameters
6. Power Burn-In
7. Final Electrical and Delta Parameters

1038
GO/NOGO

E - Dye Penetrant
A, 48 Hours @ TA = 150"C, VR = 80%
VF and IR @ 25"C
B, 96 Hours @ TA = 25"C
10 = Maximum TA Rated, VR @ Rated
l!.IR ±1oo% or 250NA (whichever is greater)
l!.VF ± 2%, using approved JTX ceiling method

When ordering screening, specify T2 as suffix (i.e., 6620T2).

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

2-48

PRINTED IN U.S.A.

IN6620-1N6625
Typical Forward Current vs Forward Voltage
20
21MP

€

1.5 AMP SERIES

10

\<

~~

~
=>
u

"
"
~

fr

125°C
.5

->

r-., (j II. V~

III A1AI III

I

.2

.2

.6

A

~

.8

10

€

J#"

...

~
=>

~. VJ

150°,,-...

0

Typical Forward Current vs Forward Voltage
20

~ERlks

u

1500(:

0

'"~

~-55°C

.5

fr

i"-25°C

.2

1.0 1.2 lA 1.6 LB 2D 2.2 2.4

.2

.6

.4

VF

.8

'"I
-"

1.0 1.2 1.4 1.6 18 2.0 2.2 2.4

lmA

1.5 AMP SERIES

500,.A

--

100,.A

G;

'-25°C

Typical Reverse Current
vs Applied Reverse Voltage

2AMP 5ERIES

200~A

w
~
w

i-- _55°C

Figure 2

Typical Reverse Current
vs Applied Reverse Voltage

...z
w
'"'"
=>
u

.,.. ~

FORWARD VOLTAGE - (V)

-

Figure 1

lmA

Ij

50C

V, - FORWARD VOLTAGE - IV)

500~A

'"~ ~/ '/I~'

'i r--. ~ /)
/ / /1/

I

~~

50,.A

200f.lA

lSOoC

2O,.A

---"'T'"

10,.A

12~

5eA
2eA
1,.A
500nA

50f.lA

IDOnA

--

,......

'}..SoC

SOnA

IOnA

o

25

;--

IO,.A
5eA

w

ill

2eA

~

leA

I

5QOnA

./

SOnA

75

100

o

125

-

r-

20nA
lOnA

50

125°C

./

200nA

IDOnA

I-""'"

20nA

lSO":£-

20}iA

-"

200nA

- - - --

lOO"A

...
ili
'"'"=>
u

25

...-~"oC V
50

PERCENT OF VA RATING

Figure 3

Figure 4

125

100

75

PERCENT OF VA RATING

Typical Peak Forward Recovery Voltage vs diFJdt
(iF lAo di/dt measured from 10% to 90% of iF)

Typical Peak Forward Recovery Voltage vs diF Idt
(iF lAo di/dt measured from 10% to 90% of iF)

10

20

=

=

2 AMP SERIES

18

0

'"~~

14

~~
?:ifi:
"-w

12

u.w

V

-

"-0
~>

,., "

16

1

0

1.5 AMP SERIES

.....-

10

8

~e;

Ihl
,0:

r-

.J

.....

"

~
10

20

50

100

200

10

diF/dt - RATE OF RISE OF FORWARD CURRENT - (AlI-IS)

Figure 5

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

20

50

100

200

diF/dt - RATE OF RISE OF FORWARD CURRENT - (AljAS)

Figure 6

2·49

PRINTED IN U.S.A.

IN6620-1N6625
Reverse Recovery Current vs difdt
10

Reverse Recovery Current vs difdt
10

2 AMP SERIES

....
.~/

;;

V

./
".

Itv.~

~""

100

*

....

-

V
V

300

200

"

400

Reverse Recovery Time vs Junction Temperature
(iF = 2A. difdt = 200AfflS. VR = 5OV)
100
1.5 AMP SERIES

2AMPSERIES

90

'iii

80

S
I

~
;:: 70

::;

~

ffi
>

50

~
I

30

~ 20

~

.§

90
80

ril
;::
~

60

40

400

FigureS

S

!Jj

300

NOTE: See Figures 11 and 12.

Reverse Recovery Time vsJunction Temperature
(iF = 2A. difdt = 2OOAfflS. VR = SOY)

§

200

100·

di/dt-RATE OF FALL FORWARD CURRENT-(AljJSl

100

~

1.0"1--'

\,.~i""
~ \ .\~ [...-1-

~

Figure 7

I

" .!

11111/

NOTE: See Figures 11 and 12.



4.0 , - - - - , - - - . - - - , - - - - , - - - . - - - - - ,
1.5 AMP SERIES
L • LEAD LENGTH
FROM BODY

3.0

f----t--+--t---t--+--j

C)

Cl

if2
w

1.0

~~

f----+--+----""""\.;;::-----''''''.3o"O+---l

I

l
0~25~-~50~-~75~-~100~--IJ25~-~-~
T, - LEAD TEMPERATURE - (0G)

TL - LEAD TEMPERATURE - (0C)

Figure 14

Figure 13

Average Forward Current vs Ambient Temperature
(50% Duty Cycle, Square Wave)

Average Forward Current vs Ambient Temperature
(SO% Duty Cycle, Square Wave)

2.0

2.0
2AMPSERIES

1.5 AMP SERIES

R.j-A ·75OC/w

I

....

....

iii0:

..........

0:

C)

Cl

0:

f2

1.0

'"~
ffi

~
I

iii
0:

1.5

:::>

~

R.j-A .75OC/W

€

€

0.5

C)

'"

X
o
25

1.5

0:

:::>

50

75

Cl

0:

"-

~

f2

125

150

[-... ......

~

'" ""

100

1.0

ffi

~
I

0.5

~

"
o
25

175

T, - AMBIENT TEMPERATURE - (OC)

50

.........

'""'" ""

75

100

125

Figure 15

Figure 16

"

150

T, - AMBIENT TEMPERATURE - (OC)

175

Reverse Pulse Power vs Pulse Duration

Forward Pulse Current vs Pulse Duration

10k~~~II~~lllllll~~~~~~~'1
c

"ALL

Square Pulse Current vs

Duration for Non-Repetitive Pulse
(8.3 ms sine wave equivalent

to3msSQuarewavei

~1.ooo~""""IIII~lnllllllllll

!Z
:l!
~

~~;;

r=
~ lOO'IIIN~:::ttI,::t
IIII

~

10 '----''--'--'-.l..Wl.'--'----'--'-l.ll.W'----.l.I...J.I..u..u
1.1!.l-..l-L.J...l..U.Ll.l...--'---'--'-'-"""
1m,
lOOns
IOms
101-'5
1001-15

IO~~~~~-J~~~-~-W~~-LJJ~WL~-L~llW

1m,

lOOns

PULSE DURATION

PULSE DURATION

Figure 17

Figure 18

UNITROOE • SEMICONDUCTOR PROOUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

2-51

IOms

PRINTED IN U.5A

IN6620-1N6625

~

Transient Thermal Response

Characteristic Waveform
(O.5·1.0/0.25A)

100

1--

--I

-+

IREC = .25A

.....

, ,""'"

\

+

-t

1.1

10115

100,...5

1m,

IOms

-lOOms

15

10,

100,

PULSE DURATION

Figure 20

Figure 19

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926.()4()4 • FAX (617) 924·1235

2·52

PRINTED IN U.SA

IN6626-1N6631

RECTIFIERS

HIGH RELIABILITY, UVfftu'TM SERIES
4.0 AMPS
FEATURES
• Ultra Fast Recovery Time
• Controlled Avalanche
• High Temperature Operation with
Low Loss
• Minimal Recovery Transients
• Low Capacitance
• Low Turn-On Voltage
• Non-Cavity Metallurgically Bonded
Package

DESCRIPTION
This state-of-the-art high efficiency rectifier is ideally suited for applications requiring high
blocking voltage_ It has the ability to switch significant current with minimal switching
transients and losses_ Leakage current at high junction temperatures has been minimized
achieving exceptionally low reverse losses. An ultra stable process ensures high reliability
and long life. This device is designed for a wide variety of applications including high
frequency switching power supplies.

ABSOLUTE MAXIMUM RATINGS

REVERSE
VOLTAGE

AVERAGE
DC OUTPUT
CURRENT
TL=75'C, L=3/8"

AVERAGE
DC OUTPUT
CURRENT
TA=25'C

PEAK
FWD. SURGE
CURRENT
t p =8_3ms

IN6626

200V

4.0A

2.0A

75A

IN6627

400V

4.0A

2.0A

75A

IN662B

600V

4.0A

2.0A

75A

IN6629

BOOV

3.0A

1.4A

75A

IN6630

900V

3.0A

1.4A

75A

IN6631

lOOOV

2.5A

1.4A

60A

TYPE
NUMBER

Operating and Storage Temperature Range -65'C +175'C
Thermal Resistance, BJL . See Lead Temperature Derating Curve. (Figures 13, 14)

MECHANICAL SPECIFICATIONS
BAND INDICATES
CATHODE END

r

.175TYP.
4.4mm

IN6626-1N6631

r-:

BODYB

.145 MAX.
3.68mm

c==J====~~=l~~~\~~I~~~~~+

L

.040±.OOl
1.02mm±.03

.115 TYP.
2.9mm

~--------~~~4~~~'----------~
Available in surface mount package; consult factory for information.

nn

SEMICONDUCTOR

~ PRODUCTS

2-53

_UNITRDDE

IN6626- IN6631
ELECTRICAL SPECIFICATIONS (AT 25·C UNLESS NOTED)
REVERSE
BREAKDOWN
TYPE
VOLTAGE
NUMBER
@50"A

REVERSE
REVERSE REVERSE
RECOVERY
JUNCTION
IRM(rec)
VFRM
LEAKAGE LEAKAGE
TIME
CAPACITANCE 2A-100AlI'5 IF=1A
@-10V
TA=25·C TA=150·C 0.5A-1.0A-.25A·
VR=50V t,=10n5

c

FORWARD
VOLTAGE

FORWARD
VOLTAGE

IN6626

220V

1.5V@4.0A

1.35V@2.0A

2.0"A

500"A

30ns

30pl

5A

4V

IN6627

440V

1.5V@4.0A

1.35V@2.0A

2.0,..A

500,..A

30ns

30pl

5A

4V

IN6628

660V

1.5V@4.0A

1.35V@2.0A

2.01'A

5OOl'A

30ns

30pl

5A

4V

IN6629

880V

1.7V@3.0A

1.4V@1.4A

2.01'A

500I'A

50ns

30pl

6A

8V

1N6630

990V

1.7V@3.0A

1.4V@1.4A

2.01'A

5OOl'A

50ns

30pl

6A

8V

1N6631

llOOV

1.95V@2.5A 1.60V@1.4A

4.0"A

l000"A

60ns

30pl

6A

10V

• See Figure 20 for characteristic waveform.

OPTIONAL HIGH RELIABILITY SCREENING
The lollowing tests are performed on 100% of the devices, per table II 01 MIL-S-19500
SCREEN

MIL-STD-750
METHOD

CONDITIONS

1. High Temperature Life (Stabilization Bake)

1032

24 Hours @ TA = 1750C

2. Thermal Shock (Temperature Cycling)

1051

C, 20 Cycles

3. Hermetic Seal
a. Gross

1071

4. High Temperature Reverse Bias

1038

5. Interim Electrical Parameters
6. Power Burn-In
7. Final Electrical and Delta Parameters

1038

GOINO GO

@

TA = (-65 to +175OC)

E - Dye Penetrant
A, 48 Hours @ TA = 150OC, VR = 80%
VF and IR @ 250C
B, 96 Hours @ TA = 250C
10 = Maximum TA Rated, VR @ Rated
ll.IR ±100% or 250NA (whichever' is greater)
ll.VF ± 2%, using approved JTX ceiling method

When ordering screening, specily T2 as suffix (i.e., 6620T2).

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERWWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-54

PRINTED IN U.S.A.

IN6626-1N6631
Typical Forward Current vs Forward Voltage
20

~~

4AMPSERIES
10

€

Typical Forward Current YS Forward Voltage
20

#. ~

I-

€

~

'"u=>
'"
~

150"C,--'"

0

f2

~/ If) "-

.5

~

'"=>

1

.2

.2

~

A

B

J II f..

u

-55"C

~

~

25"C

f2

'/. /I
I I

125 "C

I

-"

lA II' ' -

~ /: V
15~"C -.... ~ /, /

I-

IJ ,/,

Z

.5

ID 1.21.41.6 IE 2D

.2

~22.4

.2

.4

.6

~

20"A

=>
u

1O"A

'"
~
~

--

'"I
~

I"A
500nA

170' C _

I-

lOOoC

50nA
20nA
IOnA

o

-

~

'"~~

I~

500nA
200nA

IOnA
25

50

100

75

o

125

25

¢.12&oC

--

~

50

/'

100

75

PERCENT OF VR RATING

PERCENT OF VR RATING

Figure 3

Figure 4

125

Typical Peak Forward Recovery Voltage vs diF Idt
(iF = lA, di Idt measured from 10% 10 90% of iF)
10
2.5 AND
3 AMP SERIES

2.5

D.W

1.5

Iw

1.0

~8

2"A

~

3.0

2.0

}Q:

~

20nA

3.5

~g

Si~

5.A

SOnA

4AMP SERIES

"''''
~~

w

lDOnA

4.0

~w

10"A

'"I

=

01

=>
u

iQ

Typical Peak Forward Recovery Voltage vs diF/dt
(iF lA, di/dt measured from 10% 1090% oli F)
0

20"A

w

k--""

50"A

ffi
a:

'"

12;,:s.. ~

200nA

-- --

lOO",A

~

-<

lOOnA

- --- ---

200"A

---- ---...-- -

2"A

1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

2.5 AND
3AMPSERIES

500"A

5"A

.8

Typical Reverse Current
vs Applied Reverse Voltage

4 AMP SERIES

50"A

I-

ImA

500",A

lOO"A

-

Figure 2

Typical Reverse Current
YS Applied Reverse Voltage

!z

-55"C

-·25"C

V, - FORWARD VOLTAGE -IV)

Figure 1

200"A

,rJ

'I 1/
Ii /

I

-"

~

125°C

V, - FORWARD VOLTAGE - IV)

ImA

A~ ~

2.5 AND
3 AMP SERIES

10

~

-

'/

I--"

0.5

10

20

50

100

200~

10

di,/d! - RATE OF RISE OF FORWARD CURRENT - (N.S)

Figure 5

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEl. (617) 926·0404 • FAX (617) 924·1235

20

50

100

200

di,/d! - RATE OF RISE OF FORWARD CURRENT -IN.s)

Figure 6

2-55

PRINTED IN U.S.A.

..

IN6626-1N6631
Reverse Recovery Current vs di/dt

Reverse Recovery Current vs di/dt
20

20
18

4AMPSERIES

18

16

I
lQ
Wf-

~g

16

14

0:1

14

Ww
0:0:

12

~~

12

<"

10

llJ5:
>z
~O:

1513
~Ci:

f-W

~.!z

~~

·10

2ff.==

~

8

Ie;

'u

I.::::i~

0:

>2u

I,
~~~

~w

~~

·jfrl

~ ..... ~I-""
I"'~ ~t--I-

Ie;

-~~

0:

200

100

300

100

400

dildt - RATE OF FALL OF FORWARD CURRENT - (AI.SI

W
0:

~

0:

~
0:
..§
..j

S

70
60

.... ....

.... '
~ ~ ....

. 30

~-

.20

....

10

~-

'"

70

~

60

;::

i\:

-- --~ f-

80

ffl

0:

~
~
0:

~~

I

.l'

300

400

3 AMP SERIES

., 90

80

·40

I I

200

100
4AMP SERIES

90

50

I

Reverse Recovery Time vs Junction Temperature
(iF =2A. di/dt =200A/pS. VR =5OV)

Reverse'Recovery Time vsJunction Temperature
(iF =2A. di/dt =200AlpS. VR =50V)

8

I-

FigureS

100

i\:
w

I,I. 'A

I- 1-1-IT

NOfE: See Figures 11 and 12.

Figure 7

I

1-1-

dildt - RATE OF FALL OF FORWARD CURRENT - (AI.s1

NOTE: See Figures 11 and 12.

,.;::ffl

~~

~I-""

t..I~

101IIII111"

.,s

I~!;:;~

I--"

I--"

"-i\:

-~;:;:

i.-""'" ~I-""

.... 1-1III'::~ ..... 1-""""

.$oW

~o:

I
I

3 AMP SERIES

40

~-

30

I

~

.l'
..§
..j

20
10

---

--r

50

-~

-

t"

_I-

--

l

_r!tb

~

r- -~

o
20 30 40 50 60 70 80 90 100 110 120 130 140 150

20 30 40 50 60 70 80 90 100 110 120 130 140 150

Tj - JUNCTION TEMPERATURE - (OCI

Tj - JUNCTION TEMPERATURE - (OCI
NOTE: See Figures 11 and 12.

NOTE: See Figures 11 and 12.

Figure 10

Figure 9

Rectifier Current During Reverse Recovery

_trrllRM Measurement Circuit. Simplified
Rview

DEVICE
UNDER
TEST

NOfE: The gate of the MOSFET
is double pulsed. the first pulse
ramps up the inductor current. A
short interpulse. period forward
biases the device under test to
the desired
The second pulse

'F'

reverse biases the device under
tesf creating the desired dildt so
that the reverse recovery param·
eters can be measured. The
pulse pair is repeated at a low
duty factor and does not result in
device heating.

Figure 11

Figure 12

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172

TEL. (617) 926.()404. FAX (617) 924-1235

2-56

PRINTED IN U.SA

IN6626-1N6631

Average Forward Current v5 Lead Temperature
(50% Duty Cycle, Square Wave)

Average Forward Current vs Lead Temperature
(50% Duty Cycle, Square Wave)
3 AMP SERIES

4 AMP SERIES
L = LEAD LENGTH
FROM BODY

~---+--~~r---~---

L = LEAD LENGTH
FROM BODY

OL-__~__-L__~____L-__~__3
25

50

75

100

125

150

175

Average Forward Current vs Ambient Temperature
(50% Duty Cycle, Square Wave)
4.0
3AMPSERIES

Ra i·A =60'CIW

z>~

3.0

2.0

-.......

~
~
I

Cl

-.......

'-.....

1.0

'"~
'"w~

~

W
o
25

50

3.0

'"'-'=>

e

75

100

125

2.0

-....... r--......

~

ffi

~

"~
150

LO

I

...........

W

175

25

50

125

~

150

175

Reverse Pulse Power vs Pulse Duration
10k

Square Pulse Current vs
Duration for Nan·Repetltive Pulse
(8.3 mssine waveequivalenl
to 3 ms square wave)

~t""

il!J

J"~

J~

ALLSERI~

Square Pulse ClJrrent vs
Duration tor

Non-Repetitive Pulse

(8.3 ms sme wave equIValent

to 3 ms square waveJ

Ik

r-......

ii'

r-....;

w

iQ

t--..

100

~

~

J"~

U

~
=>

100

Figure 16

Forward Pulse Current vs Pulse Duration

'"=>

75

TA - AMBIENT TEMPERATURE - (lie)

10,000

~

~

o

Figure 15

I 1.000

............

e

T, - AMBIENT TEMPERATURE - (OC)

is:

Ra i·A =60OCIW

is:

Cl

~

175

Average Forward Current vs Ambient Temperature
(50% Duty Cycle, Square Wave)

I

'"~

150

Figure 14

4AMPSERIES

'"'"u=>

125

Figure 13

4.0

w

100

TL - LEAD TEMPERATURE - (Cle)

is:
z>-

75

50

T, - LEAD TEMPERATURE - (OCi

~

0..

100

'"I
c'C

11111

111111

10
lOOns

1m.

IO~~~~~~~~~--~~~~~~~~~~~~

1m.

lOOns

lOms

PULSE DURATION

PULSE DURATION

Figure 17

Figure 18

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926-0404 • FAX (617) 924·1235

2-57

lOms

PRINTED IN U.S.A.

IN6626-1N6631

~

Transient Thermal Response
100
50

I

ill

Z

~

20

10

Characteristic Waveform
(O.S-1.O/O.2SA) .

~.--

_t

0:

':rffi"

IREC = .25A

.....

.5

>-

ffi
'"~

in

\
\

0.1

z

I
,.J' 0.01

.05
.02

lOfoiS

1ms

lOOms

Is

,

t
-t

1/

100s

PULSE DURATION

Figure 19

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

Figure 20

2-58

PRINTED IN U.S.A.

SD51

POWER SCHOTTKY RECTIFIERS
120 Amp Pk, 45V

DESCRIPTION

FEATURES
•
•
•
•
•

The SD51 has a Schottky barrier
junction and is ideally suited for output rectifiers and catch diodes in low
voltage power supplies_ The Unitrode
high conductivity design, using a heavy
copper top post and a 4 point crimp,
ensures cool terminal operation and
low dynamic impedance. Rugged
design absorbs stress that can damage
glass-to-metal seal during installation
and use.

Very Low Forward Voltage
Low Recovered Charge
Rugged Package Design (00-5)
High Efficiency for Low Voltage Supplies
Available with Flexible Top Lead

ABSOLUTE MAXIMUM RATINGS (TCASE

=25'C)

Peak Repetitive Reverse Voltage, VRRM ••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• 45V'
Working Peak Reverse Voltage, VRWM •••••••••.••.••.•••••.••••.••.••••••.•••••..•••.••••.•••••• 35V'
Peak Repetitive Forward
Current (Rated VR, Square Wave, 20 KHz,
50 percent Duty Cycle), IFRM •...••.••••••••.••..•••.•.•.•.••••••••••••••••••••••••.•••••••. 120A
Non-repetitive Peak
Surge Current (S.3 mS), IFsM ••••••...••.•••••••••••••••••••.•••••••.••.•••.••••••••••••••. SOOA
Peak Reverse Transient Current, IRM •••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• 2A
Storage Temperature Range, Tot. . ........................................... -55'C to +165'C
Junction Op~rating Tempe~ture Range, Tj ................................ -55'C to +150'C
Thermal Resistance, JunctlOn-to-Case, RSJC ............. , .............••.......•.•.... 1.0'C/W

*See curve of VRRM Rating vs Case Temperature

MECHANICAL SPECIFICATIONS
SD51

ins.

A

•e
D
E

,

mm

.225:!: .005

5.72'" 0.13

.060 MIN .

1.52 MIN •

. IS6:!; .020

3.96'" 0.51

.156 MIN. FLAT

3.96 MIN. FLAT

.667 CIA. MAX.

16.94 CIA. MAX •

•090 MAle.

2.29 MAX •

17.20+ 0.25

G

.677 ... 010

H

.375 MAX.

J
K

1.000 MAX.

25.40 MAX •

L

. 450 MAX.

11.43 MAX •

M

.438:!: .015

11.13'" 0.38

N

.078 MAX.

•140 MIN. DIA.

. DO-5

9.53 MAX .
3.56 MIN. CIA.

1.98 MAX.

Notes:
1. Cathode is stUd.
2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque: 30 inch pounds (35 kg. em).
4. Angular orientation of terminal is undefined.

nn

SEMICONDUCTOR

~ PRODUCTS

4/82

2-59

_UNITRODE

8051
ELECTRICAL CHARACTERISTICS (T CASE = 25'C)
Symbol

Characteristic
Maximum Instantaneous
Reverse Current

iR

Maximum Instantaneous
Forward Voltage

v.

Flexible Top Lead Option

v.

Maximum Capacitance

Ct

Maximum Voltage
Rate of Change

dvldt

Units

Conditions

mA
mA

Te = 25°C, VR = 35V
Te = 125°C
Pulse Width = 400pS
Duty Cycle = 1 percent

0.60

V

0.65

V

i. =60A
Te = 125'C
'Pulse Width = 300pS
Duty Cycle = 1 percent

Limit
50
200

4000

700

VOOM Rating vs
Case Temperature

pF

VR = S.OV

VII'S

vR = 35V

Typical Reverse Current
vs Reverse Voltage

Typical Forward Current
vs Forward Voltage
1000

45

40

....... ........

r-.... r-....

~

::J
U

1

CJ

._-

20

<"
10

5

//

ro

~12,'C

'"

11:

UIO.O

'"'"'"
'"~

it

125

150

CASE TEMPERATURE (Oe)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926·0404 • FAX (617) 924·1235

./

-" 1.0

"c,
'/:14
,<;

"\)~

0.1
7S

/

1';<:;

'"

.1

25

.,./ /'

::J

~:--55'C

I

/

12">'c

~

25'C

J.

o

15~ ~

100

f-

~ 150'

f- 75'C

«

10

-so

;;--

~
f-

ro

30

_

...-! ~

100

.1

.2

.3

.4

.5

.6

.7

VF-FORWARD VOLTAGE (V)

2-60

.8

.9

1.0

I
o

10

20

30

40

VR-REVERSE VOLTAGE (V)

PRINTED IN U.S.A.

50

DUAL POWER SCHOTTKY RECTIFIERS

S0241
S0241HR2

30 Amp Pk per diode, 45V

FEATURES

DESCRIPTION

•
•
•
•
•

The SD241 has two Schottky barrier
junctions arranged in a common cath·
ode configuration and is ideally suited
for output rectifiers and catch diodes
in low voltage supplies.

Very Low Forward Voltage
Low Recovered Charge
Rugged Packaged Design (TO·3)
High Efficiency for Low Voltage Supplies
Dual Schottky Rectifiers in a Single Package

ABSOLUTE MAXIMUM RATINGS (TeASE = 25°C) Per Diode
Peak Repetitive Reverse Voltage, VRRM •••••••••••••••••••••••••••••••••••••••••••••• 45V'
Working Peak Reverse Voltage, VRWM ••••••••••••••••••••••••••••••••••••••••••••••• 35V
Average Rectified Forward Current, 10 •••••••••.••..••••••.••..••••••••..•...••••..• 30A
Non·repetitive Peak
Surge current (8.3 mS), IF8M ••••••••••••••••••••••••••••••••••••••••••••••••••• 400A
Peak Reverse Transient Current, IRM •••••••••••••••••••••••••••••••••••••••••••••••• 2A
Storage Temperature Range, T"•..................................... -55°C to +175°C
Junction Operating Temperature Range, TI .••.•••.........••••....•..• -55°C to +150°C
Package Thermal Resistance, Junction to Case, R9JC ........................... 1.4°C/W
* See curve of VRRM Rating vs Case Temperature.

MECHANICAL SPECIFICATIONS
NOTE:

~I

ANODE2 •

Leads may be soldered to within
of base provided temperature·
time exposure is less than 260'C
for 10 seconds.

'A'"

~i1E
e

A
B

M
ANODE 1

G
I

7'E.J:::I'

"NODE 2

e

J-~

0

K

C
0
E

F

...

H
1

I..

• ANODE 1

SD241
SD241HR2

TO·204AA (TO·3)

CASE (CATHODEI

F

1

r

L

G
H
J

K
L
M

ins.
.875 MAX.
135 MAX.
.250-.450
.312 MIN.
.038-.043 DIA.
. 188 MAX. RAO.
1.177-1.197
.655-.675
.205-.225
.420-.440
.525 MAX. RAO.
.151-.1610IA.

mm.
22.23 MAX .
3.43 MAX.
6.35-11.43
7.92 MIN .
0.97-1.09 DIA .
4.78 MAX. RAO .
29.90-30.40
16.64-17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAO .
3.84-4.09 OIA .

Notes: All metal surraces tin plated.

nn

L'::::::::J
4/82

2-61

SEMICONDUCTOR
PRODUCTS

_UNITRODE

ELECTRICAL CHARACTERISTICS (TeAsE
Characteristic
Maximum Instantaneous
Reverse Current

Maximum Instantaneous
Forward Voltage

= 25°C) Per Diode

SD241
SD241HR2

Symbol

,
iR

Limit

Units

Conditions

25
100

mA
mA

Tc =25°C. VR =35V
Tc = 125°C
Pulse Width == 400pS
Duty Cycle == 1 percent

V

iF == lOA
Pulse Width == 300"S
Duty Cycle == 1 percent
Tc
125"C

.47

VF

=

iF == 20A
Pulse Width
Duty Cycle
Tc == 125"C

V

.60

== 300pS

= 1 percent

Maximum Capacitance

C,

2000

pF

VR == 5.0V

Maximum Voltage Rate of Change

dv/dt

1000

viI'S

vR == 35V

VOOM Rating vs
Case Temperature

Typical Forward Current
YS Forward Voltage

Typical Reverse Current

vs Reverse

100

'"'"

00

«
'"
:;:

10

'1/

t=,"",q. ~'!I
...,

",,/'

100

~

;''(,11

20

U

0

40

11.19 /

:J

...... .........

45

so
~
....
zw

~

-55"C

;;:

~>

.5

50 f--"\>

~
~

20

....

:::J

~

20

0

75°C125°C

I

-~

10

1

25°C

.2

/

0:

o5

.2 .3 .4 .5 .6 .7 .8 .9 1.01.11.21.31.4
V,- FORWARD VOLTAGE (V)

·50

25

75

125

vV'

" V 1/

~ II

:; II

1 ~ rt'fo
~()
V V~ •

10

o .1

V

...,<:S

/

5

V"

*
,,');

V

w

5

->

1/

U

V>

...'"

VDI~age

300
200

10 15 20 25 30 35 40 45
V,-REVERSE VOLTAGE (V)

150

TEMPERATURE (OC)

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices specified SD241HR2.
SCREEN

MIL-STD-7S0
METHOD

CONDITIONS

1. High Temperature

1032

24 Hours @ TA

2. Temperature Cycle

1051

F. 20 Cycles. -55 to +150°C. No dwell required
@ 25°C. t ;. 10 min. @ extremes

3. Hermetic Seal
a. Fine Leak
b. Gross Lea k

1071

6. High Temperature Reverse Blocking
7.

Final Electrical'Parameters

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· fAX (617) 924·1235

150°C

H. Helium
C. Liquid

4. Thermal Impedance
5. Interim Electrical Parameters

~

Sage Test
GO/NOGO

Similar to
Method 1040
GO/NOGO

2-62

VF and IR @ 25°C

1/, Sine Reverse. t ~ 48 Hours. Tc
~ rating. F ~ 50-60 Hz. 10 ~ OA

~

125°C. VRW M

VF + IR @ 250C
PDA ~ 10% (Final Electricals)

PRINTED IN U.S.A.

UBS421

BISVN SYNCHRONOUS RECTIFIER
For Low-Voltage « 5.0V) Loads
FEATURES

DESCRIPTION

• Very Low On Resistance, Typically
14mO

The BISYN is a bipolar junction transistor specifically designed to perform the rectifying
function in the secondary of a switching power supply. Unlike a conventional bipolar,
the BISYN has a much higher emitter·base breakdown voltage (typically 50V) which is
needed for full-wave rectifier circuits. Base drive losses are kept at a minimum by the
relatively high current gain of the BISYN.

• High Reverse Blocking Vecs = 40V
• Can be PWM Controlled to Provide
Regulated Voltage to Load
• Low Temperature Coefficient of On
Resistance

The BISYN's most significant specification feature is its very low forward voltage, 0.3V
@ 20A compared with 0.6V for a typical Schottky.

• Fast Switching Times Permit Ease of
Operation at High Frequency

With a 3V 'Ioad the power loss associated with the Schottky contributes to a 20% reduction in efficiency, while with a synchronous rectifier this loss is reduced to 10% or less.

• High Gain Reduces Base Losses
• Load Regulation is Programmable

ABSOLUTE MAXIMUM RATINGS
Continuous Forward Current, IF .................................................. 20A
Peak Forward Emitter Current', leRM .................... , ... , .................... 60A
Inductive Forward Current Clamped, IFLM ........................................ 35A**
Continuous Base Current', 18 ..................................................... 6A
Peak Base Current, laRM ........................................................ 30A
Forward Blocking Voltage, Vces ............................. '" .................. 50V
Reverse Blocking Voltage, Vecs .................................................. 40V
Thermal Resistance, R6JC ................................................. 1.75°C/W
Power Dissipation, POiss ................................................ 70W @ 25°C
Derating Factor ........................................................... 0.57WrC
Operating Temperature Range, TJ ................................... -55°C to +150°C
Noles: *lmS pulse.
·*See Figure 1.

MECHANICAL SPECIFICATIONS
UBS421

TO-220AB

nn

SEMICONDUCTOR

~ PROOUCTS

8/86

2-63

_UNITRDDE

UBS421

ELECTRICAL CHARACTERISTICS (at 25°C unless noted)
TEST

SYMBOL

On Resistance

MIN.

RCECONI

Current Gain

tiFE

Base Saturation
Voltage

80

TYP.

MAX.

UNITS

14
20

17
24

mel
mel

CONDITIONS
Ie = 15A. 18 = 0.6A.
Ie = 15A. 18 0.6A. T

=
= 125°C
=0.5V

100

Ie = lOA. VeE

V8ECsati

0.95

1.1

V

Ie = 15A. 181 = 0.6A.
182 =0.6A

t,

95

150

nS

Ie = 15A. 181 = 1.5A.
Vee lOV. 182 1.5k

nS

Ie = 15A. IS1 ;" 1.5A •
Vee lOV. 182 1.5A

100

nS

Ie = 15A. Is 1.5A.
Vee lOV. IS2 1.5A

/lA
mA

VeE = 50V
VeE 50V. T
VEe
VeE

Rise Time

=

. Storage Time

Is

Fall Time

50

tf

Forward Leakage
Current

250'

200

=

leEs

Reverse Leakage
Current

lEes

200
1

/lA
mA

Collector Ca pacita nce

Coso

1000

pF

Collector· Emitter Voltage vs Collector Current
at Various Forced Gains

=
= 125°C
=40V
=40V. T =125°C
VeE = lOV. f = 1MHz

I
I-

S'

5

iii

500

I

J

to

/A

w

'"
0'='

200

>

0:
W
II-

~

100

I-

~

50

0

'"

~Te=25"C

"i

TJ

l1

II I

125"C

~

TJ = 25'C

0.5
TJ - -55'C

0.2
0.1

.d ~

I I

~

IBlo'PTI = 18 for

= 1.1 x VCElsaU
(VeE.satJ @ lellB - 10)

VeE

t

r3r
/'

u

~

~

>
0:
w
~

P-"'"50

0:

0

~

1--- .....

~
=>
~

=

Optimum Base Drive Current
vs Collector Current

g

1000

=

=

=

100
1

650

=

o 005
~ . 1

~

leila = 10

10

20

50

Ie COLLECTOR CURRENT - (A)

CURVE # 2

20

10

1

10

20

50

Ie COLLECTOR CURRENT - (A)

CURVE # 1

DESIGNING FOR MINIMUM POWER DISSIPATION
. particular load current is virtually the same throughout the oper·
ating temperature range.

Although used as a rectifier the BISYN is a three terminal device.
Therefore. the power dissipation due to the On Resistance and
also the dissipation due to the base current must be taken into
consideration. You will notice on Curve 1 that the change in On
Voltage (VCE) at a particular collector current is small even with
large changes in base current. Asa result. achieving the 10westOri
Voltage for a particular load current does not result in the lowest
overall power loss.

To calculate the power dissipation first estimate the operating
temperature of the BISYN. Then using the appropriate tempera·
ture curve determine the On Voltage at a circuit gain of 10 foryour
load. Multiply this voltage by 1.1 and then by the load current to
determine On Resistance power dissipation. Base current power
dissipation is calculated by finding the base drive current on
Curve 2 and then going to the applicable temperature curve for
Base Emitter Voltage vs Base Current. Curve 3. Multiplying the
Base Emitter Voltage by Base Current will give you the power
dissipation due to base current

It has been determined that operating at a base current that
achieves an On Voltage that is 110% of the On Voltage at a circuit
gain of ten gives a result that is very close to optimum power
dissipation. Curve 2 gives you the appropriate base current to
achieve 110% of this On Voltage. This same curve shows that the
appropriate base drive for optimum power dissipation at any

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERTOWN. MA 02172

TEL (617) 926·0404 ,·FAX (617) 924·1235

2-64

PRINTED IN U.S.A.

UBS421

Base Emitter Vollage vs Base Current
al Various Colleclor Currenls
1100

l~l

5

./'

I

'"
a
~

./'
;" SA

900

>

,/

ffi
i=

'/V

:;;

800

'"W
"''"~
>

1--1-

700

'"c

lOA

.'"

~
'"'"z
:;:

2A

Ie = lA

.......... 1-'"

Te = 25"C

=

lelle = 10
Resistive

I't,

200

t, RISE TIME

~
100

:;:-r-.

Istt

t.

0-

~

0.1

Vee 10V
Te 25"C

FALL TIME
STORAGE TIME

U

r-.--I-

600
0.01

""'-

500

i.

....... 1-'"



III

1000

II

S- 1000

'"'"

Swilching Speed (I,. Is. If)
vs Colleclor Currenl

"

50

10

0.5

18 BASE CURRENT -

(A)

20

10

Ie COLLECTOR CURRENT - (A)

CURVE # 3

CURVE # 4

Gain vs Colleclor Currenl @ VeE = O.5V

Siorage Time vs Base Turn·Off Currenl
1000

10

500

~

Te = 25"C

\.
Is'\

0-

ijj
~

::>

u

~
~

it

'"""'"
"'~
0-

Te = 125"C

200

Te = 2rC
100
Te - -55"C

0-

ijj
~

0.5

::>
u

-

~

,

lBl = 1.5A
Ie = 15A

Resistive Load
0.2

20

II

0.1
10

........

50

20

50

10
100

200

ts STORAGE TIME -

I

500

20

50

CURVE # 6

CURVE # 5

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PlEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

10

Ie COLLECTOR CURRENT - (A)

(nS)

2·65

PRINTED IN U.S.A.

UBS421

Collector-Emitter Voltage vs Base Current
at Various Collector Currents

Collector-Emitter Resistance
vs Junction Temperature
1000

1.7

;;-

/

0:

'"

1.5

lI-

~:o
U;J ~

S

t; E

1.3

~.s

01
u'"
uu

RCE

~~
w'"

1.1

&

0.9

«

V

o0:::=~

/

=14mO

@!!!

~~

/

V

500

I
w
<:l

:;
0

,

200 \

>

V

r;;

II-

100

"'

50

~

Ie = 15A. Ie = 0.6A

0

I-

\

r-I-

r\

,"

~

0

~

-25

25

125

75

Te

=25°C

I
lill= If

0.01

175

2A

20

10

0.7
-75

1111

lOA

5A

u

V
/'

20A
15A

0.1

1

2

10 20

TJ JUNCTION TEMPERATURE - ("C)

Ie BASE CURRENT - (A)

CURVE # 7

CURVE # 8

Forward Bias Safe Operating Area (SOA)

Reverse Bias Safe Operating Area

100

lOOpS

50

lmS

20

'I..

40~~--+--+--+--+--+--+--+--+~

~

DC

'\

1\

10

IS2 =

I-

§

2A

VeE COFFI

0:

=>

\

0

b

j

= 4V

20~-+--+--+--+--+--+--+--+--+~

\

U
0:

Te = 25°C

\

10~-+

0

__+--+__+--+__+--+__

+--+~

u
E

0.5

OL--L~~~-L~~i-~

o

0.2

10

20

30

__L-~-J
40

50

VeE COLLECTOR·EMITTERVOLTAGE - (V)

CURVE # 10
0.1
0.5

10

20

VeE COLLECTOR·EMITTER VOLTAGE - (V)

CURVE # 9

5n~AA~
~~5~
VARY PULSE WIDTH
51 = Vee lOV
52 = VCLAMP SUPPLY 30V
il1 = S051 SCHOTTKY
D:z = S051 SCHOTTKY
C1 = .1pF

L, "" lOpH

Figure 1. - Test Circuit for I LPK -

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

2-66

PRINTED IN U.S.A

UBS421

Common-Emitter Collector Characteristics

Junction Capacitance vs Reverse Bias Voltage
~

2000

a

-

W
U

~

~$

til
WI-

~

~z

~W

C3
z
o

0",

u'"
0"
-u

20

15

g

Te = 25'C

CEBO

-

r-

10

15

20

'"og

25

8

VeE COLLECTOR·EMITTER

~;:;

VOLTAGE -

-

:--..... .......

200

~

"

100
I

10

(V)

20

Veo OR VEO REVERSE VOLTAGE - (V)

~~

L..-"L...L_.L..-'_...J 15

~

~

10

1---JJJ"'-t-+-jf--l1O

500

tiz

VEe EMITTER·COLLECTOR
VOLTAGE - (V)
25

-

1000

~ ~

CURVE# 12

-"
2':
CURVE # 11

Transient Thermal Resistance (normalized) vs Time

..;

./"

W

U

~

0.2

iii

;i
'"

./

0.1

/SingleP ulse

ZSJcm

=r(t)R9JC

RSJC =

1.75°C/W

::;

ffi

:I:
I-

0.05

~

/"

in

z

«

'"
I-

~

?

0.02

0.01
0.01

0.1

10
PULSE TIME -

20

50

100

200

500

(mS)

CURVE # 13

UNITRODE , SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-67

PRINTED IN U.S.A.

BISYN™ SYNCHRONOUS RECTIFIER

UBS430

For Low-Voltage «5.0V) Loads
FEATURES
• Very Low On Resistance Typically 7 milliohms

DESCRIPTION
The BISYN is a bipolar junction transistor that is specifically designed to perform the
rectifying function in the secondary of a switching power supply. Unlike a conventional
bipolar, the BISYN has a much higher emitter·base breakdown voltage (typically 50V)
which is needed for full·wave rectifier circuits. Base drive losses are kept at a minimum
by the relatively high current gain of the BISYN.

- High Reverse Blocking Voltage VECS = 40V
-Can be PWM Controlled to Provide
Regu lated Voltage to Load

The BISYN's most significant specification feature is its very low VF, 0.3V at 30A,
compared with 0.6V for a Schottky and only O.lV at lOA. Its most significant functional
feature is its programmability.

• Low Temperature Coefficient of On
Resistance
• Fast Switching Times Make Operation
at High Frequency Easy

The very low VF of this product reduces the rectifier power loss in a power supply
secondary, improving its efficiency. This becomes particularly significant as load
voltages drop below 5V. For example, with a 3V load the power loss associated with the
Schottky contributes to a 20% reduction in efficiency, while with a synchronous rectifier
this loss is reduced to 10% or less.

• High Gain Reduces Base Losses

The programmability feature gives the designer a new way to provide regulation to a
load. Its main advantage is the reduced power component count as compared with a
buck regulator and the resulting improvement in efficiency.

ABSOLUTE MAXIMUM RATINGS
Continuous Forward Current ........................... IF ........................ 40A
Peak Forward Emitter Current' .. ; ...................... IERM .................... 150A
Inductive Forward Current Clamped .................... IFLM ..................... SOA"
Continuous Base Current" ............................. Ia ......................... SA
Peak Base Current' ................................... laRM ..................... 50A
Forward Blocking Voltage .............................. VCES ..................... 50V
Reverse Blocking Voltage' .............................. VECS ..................... 40V
Thermal Resistance ................................... Re .................. 1.0°C/W
Power Dissipation ................................... '.' ................. 150W @ 25°C
Derating Factor ..............................•............................. 1.0Wrc;
Operating Temperature Range ...................................... -65°C to +175°C
Notes: 'lmsec pulse.
**See Figure 1.

MECHANICAL SPECIFICATIONS
UBS430

TO·204AE (TO·3 modified, 60 mil. pin)

22.2210.8751

"7:Ci '~l':'T

PLANE

::~:g:ft:
OIA. --11TWO PLACES

;~:::lg:::~:
TWO PLACES

26.67
I.OSO} MAX.

U:IS:l~BD'A.
TWO PLACES

"""''''

M:MI8:!~t
t MEASURED AT SEATING PLANE

Dimensions in Millimeters and !Inches)

nn

SEMICONOUCTOR

~ PROOUCTS

1IS5

2·68

_UNITRDDE

UBS430

ELECTRICAL CHARACTERISTICS (at 25°C unless noted)
TEST
On Resistance
Current Gain
Base Saturation Voltage

SYMBOL

MIN.

hFE

50

CONDITIONS

TYP.

MAX.

7

10

mO

Ic = 30A, Ie = 1.2A

10

13

mO

Ic = 30A, Ie = 1.2A, T = 125°C

RCEIONI

UNIT

Ic = 20A, VCE = 0.5V

100

VeEIsall

1.2

1.5

V

Ic = 30A, Ie = 1.2A

Rise Time

t,

85

120

nS

Ic = 20A, Ie = 2A, Vcc = lOV

Storage Ti me

t.

300

500

nS

Ic = 20A, Ie = 2A, Vee = lOV

Fall Time

tf

75

120

nS

Ic = 20A, Ie = 2A, Vcc = lOV

100

JlA

VCE = 50V

Forward Leakage Current

ICES

Reverse Leakage Current

IECS

Collector Capacitance

Coeo

1000

1

mA

VCE = 50V, T = 125°C

200

JlA

VEC = 40V

1

mA

VCE = 40V, T = 125°C

pf

VEC = lOV, f = lMHz

1500

A RECOMMENDED DRIVE CIRCUIT

D,

Vo

BISYN RECTIFIER IN A TWO
TRANSISTOR FORWARD CONVERTER.

THE OPERATION OF THE CIRCUIT IS AS FOLLOWS:
forward biased collector to base junction of BiSYN Q4. This junction acts as a voltage source (=O.7V) as long as BISYN Q4 is
conducting during the storage time. The turn-on of BISYN Q3 is
held off due to lack of base drive because winding N3 is shorted,
through diode D3 and the collector-base junction of BISYN Q4.
Meanwhile, the current through the shorted turns (the rate of rise
of which is limited by leakage inductance) is utilized to rapidly
commutate BISYN Q4 off. Diode D3 is then reverse biased and
BISYN Q3 turns on through winding Nl.

During the on·time of transistors Ql and Q2 , BISYN Q3 is biased
on and delivers output load current through filter inductor L. The
polarity of voltage developed across winding N2 is such that
BISYN Q4 remains in a blocking state. Diode D3 is also biased off.
When transistors Ql and Q2 turn-off; some of the energy stored in
the magnetizing and leakage inductance enhances the recovery
process of BISYN Q3- The recovery time (300-400nS) of BISYN Q3
extends the reset time of the core. However, in a typical design,
half of the switching period is allocated for core reset time. Thus,
the storage time has no significant effect on operation. The BISYN
Q4 starts conducting filter inductor current as soon as the voltage
across the secondary collapses. BISYN Q4 receives base drive
energy from the filter inductor L, through winding N2. The diode
Da still remains reverse biased.

The effect ofthe turn-off circuit, consisting of windi ng N3 and D3 is
toeliminate high peak currents inthe secondary. You will also find
that with this circuit there are practically no switching losses.
Application Note U-103 contains additional design information
and circuits for the BISYN.

When transistors Ql and Q2 turn-on again, the voltage across
winding N3 is clamped to approximately zero by diode D3 and the

UNITRODE • SEMICONDUCTOR PRODUCTS
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TEL. (617) 926·0404. FAX (617) 924-1235

2-69

PRINTED IN U.S.A.

EI

UBS430
Collector-Emitter Voltage vs Collector Current
,
at Various Forced Gains

DESIGNING FOR MINIMUM POWER DISSIPATION

Although used as a rectifier the BISYN is a three terminal device.
Therefore. the power dissipation due to the On Resistance and
also the dissipation due to the base current must be taken into
consideration. You will notice on curves 1 and 2 that the change in
On Voltage (VCE) at a particular collector current is small even
with large changes in base current. As a result. achieving the
lowest On Voltage for a particular load current does not result in
the lowest overall power loss.

1000

S'

5

500

I

'"

<.!l

0

200

~

>

'"'"

II-

It has been determined that operating at a base current that
achieves an On Voltage that is 110% ofthe On Voltage at a circuit
gain of ten gives a result that is very close to optimum power
dissipation. Curve 3 gives you the appropriate base current to
achieve 110% ofthis On Voltage. This same curve shows that the
appropriate base drive for optimum power dissipation at any
particular load current is virtually the same throughout the oper·
ati ng temperature range.

~

0

r-50 ;==25

~

~ Tc = 25°C

50

.......

~ .....-: V

<5
u

~

leila:::: 100

100

c<

IU

A~

/

«

S

20

~

10

To calculate the power dissipation first estimate the operating
temperature of the BISYN. Then using the appropriate temperature curve determine the On Voltage at a circuit gain of 10foryour
load. Multiply this voltage by 1.1 and then by the load current to
determine On Resistance power dissipation. Base current power
dissipation is calculated by finding the base drive current on
curve 3 and then going to the applicable temperature curve for
Base Emitter Voltage vs Base Current (curves 4 and 5). Multiplying the Base Emitter Voltage by Base Current will give you the
power dissipation due to base current.

1

10

20

50

Ie COLLECTOR CURRENT - (A)

CURVE # 1

Collector-Emitter Voltage vs Collector Current
at Various Forced Gains

Optimum Base Drive Current
vs Collector Current

1000

S'

5

500

1';1

'"
~

200

>

'"
~

le/IB=~ ~

100

~

0

50

~
0

:;;

'"'"

~Te=125OC

:::>
u

65°C

//L

TJ-25°c

~

0.5

'"

TJ =

>
ir

~~oc

0

'"
«

....:~~


::;

.,.2L

u

w

,~

-50

c<
IU

....

TJ -

I-

~~

<.!l
0

~~

~

I

20

~
a
.§

0.2

0,1

I~

~

lB(oPTl :::: 18 for
VeE:::: 1.1

X

VCE(SATI

(VCE(SATI @ lells

=10)

10

1

10

20

50
0,05

Ie COLLECTOR CURRENT - (A)

1

CURVE # 2

10

20

50

100

Ie COLLECTOR CURRENT - (A)

CURVE # 3

5n'~~~~
v~:nv_

VARY PULSE WIDTH

1.3n

51 = Vee lOY
S2

= VClAMP

SUPPLY 30V

0, = 5051 SCHOTTKY
02 = 5051 SCHOTTKY
C, = .1JlF

II -lOpH

FIGURE 1. TEST CIRCUIT FOR ILPK.
UNITROOE • SEMICONDllCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA02172
TEL. (617) 926-0404· FAX (617) 924-1235

2-70

PRINTED IN U.S.A

UBS430
Base Emitter Voltage vs Base Current at
Various Collector Currents

Base Emitter Voltage vs Base Current at
Various Collector Currents

~

1600

1000

1500

950

>

.s

1400

~
>

f5
t:

w

1200

1_

.J

20:O
15A

900

:;
'"

/,lI.

Te = 2f'C,
1100

>

'r'"

Ie = 2A

700

~

700

"'mw

600

>

550

I IIII

600
0.01

f

'/

1~1--'

~ 650

:t :mrp-

/J

/

1~.....

w

lOA~ I:=f--

Ml 800
>

750

....

"'7

A

ffi
....

/

20j

800

0

~V

40A

/

3,OA

OJ

~ 1000

.;,
~

900

I 850

~ 1300
OJ

o

II
II

....... 1--'

n ........-1/
-'cf.=}t)

-i-

Te = 125°C

I

500

0.5 0.1

5

0.5

10

0.01

10

0.1

I. = BASE CURRENT - (A)

I. BASE CURRENT - (A)

CURVE # 4

CURVE # 5
Current Rise Time vs Collector Current

Current Rise Time vs Collector Current
1000

500r---~-+-+-rt+rH~--~-+-+-rt+TH

500


w 200

= ts + h

10

20

'I'-

"
1

Ie COLLECTOR CURRENT - (A)

10

-

20

30

Ie COLLECTOR CURRENT - (A)

CURVE#8
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA02172
TEL. (617) 926-0404 • FAX (617) 924-1235

100

70
30

I
I

Vee =
I
Te = 125°C
le/lB = 10

~

......

200

OJ

.

'"

'"

w
::;

;::

t'

g

400
300

'----

~

= IOV

=25°C

lellB = 10
Resistive Load

;::

~

30

Ie COLLECTOR CURRENT - (A)

CURVE # 6

-'

20

10

1

Ie COLLECTOR CURRENT - (A)

CURVE # 9

2-71

PRINTED IN U.S.A.

UBS430
Gain vs Collector Current @ VeE = O.SV at
Various Temperatures

Collector-Emitter Resistance vs
Junction Temperature

!

1000

500

1.7

/

1.5

e
~

Te = 125'C
1.3

~

,25'C,

z

...'"'"

100 _ ' 6 5 ' C

RCE :: 7mO

15

'"'"
::J

V

200

1.1
Min. Gain @ 20A'

0.9
20

,..

w

cit

10

1

10

20

'W

50

-75

Te

500

I

'"
:;

30A

w

200

0

>

\

100

~

..."'0
~
0
u
g

75

125

175

eC)

Collector-Emitter Voltage vs Base Current
1000

40A

...

25

TJ JUNCTION TEMPERATURE -

Collector· Emitter Voltage vs Base Current

...ffi

Ie:: 30A, Is == 3A

CURVE # 11

1000

«

V

-25

CURVE # 10

.5

~

0.7

d!

Ie COLLECTOR CURRENT - (A)

. . . .V

V

1/

50

U

:;-

25"C

@

"t--

15A
IDA

:;-

25'C

Htl

.5

'~"

«

m
1lIT

0

...ffi

...

20A

~

..."'
~
0

10
0.001

2A

I"

IDA

50

w

;!;

5A

......

2A

0

Ie

I. . . .

I~L

20

1A

1A

I

10
0.01

5

0.1

10

0.001

0.1

0.01

Is BASE CURRENT - (A)

Is BASE CURRENT -

CURVE # 12

CURVE # 13

Collector-Emitter Voltage vs Base Current
at Various Collector Currents

~

1000

z

;:;

U

w

;;:

'"~

§? 200
Te:: -65"C

1\

~ 17-;-

500

Cabo Collector-Base
Capacitance

200

1

«
u

f'rffi

6
i=
u

z

~

lOA

5

10

(Al

Junction Capacitance
2000

~ 1000

~ 500

25

15A

100

u

l-

30A

200

>

50

"I........

,

I

w

2~A

5A

20

Te - 125'C
500

100
1

1

Te:: 25"C

g~~~c~t~~~:r-Base -

J J

JJ

10

20

Ves OR VES REVERSE VOLTAGE - (V)

r-

CURVE # 15

Ie = 5A

w

.g

20

10
0.001

0.01

0.1

10

Is BASE CURRENT - (A)

CURVE # 14
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

2-72

PRINTED IN U.S A.

UBS430
Forward Bias Safe Operating Area (SOA)

Reverse Bias Safe Operating Area

200
O.lmS

"

100

ImS

50
>-

20

'"'"
u
'"u~

10

10

DC

:;:)

Te

j

=25°C

40~-+--~~r-~--r--r--t--t--~~

a

u
.E

0.5

0.2
0.1
0.5

10

20

50

VeE COLLECTOR·EMITTER VOLTAGE - (V)

CURVE # 16

VeE COLLECTOR·EMITTER VOLTAGE - (V)

CURVE # 17
Common-Emitter Collector Characteristics

60

BVCEV

BV:~:v~~~~~~;:~==F==t--~~1~0--t.15~;20~~2~5~~--~80

VeE COLLECTOR-EMITTER VOLTAGE - (V)

CURVE # 18
Transient Thermal Resistance vs Time

8

1

~

0.5

:l«
a
z

L

"'u

~

0.2

fij

'"~

L

O. 1

ZSJc(t) = r(t) 9JC
ROJC = l.O"C/W

~ Single Pulse

"ffi
~

>-

0.0 5

10

./

in

z
~

>-

0.0 2

u

'"

~ 0.0 1
0.01

?

0.1

10
PULSE TIME - (mS)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

20

50

100

200

500

CURVE # 19
BISYN™ is a trademark of Unitrode Corporation.

2-73

PRINTED IN U.S.A.

UES701 BYW31-50 BYW77-50
UES702 BYW31-100 BYW77-100
UES703 BYW31-150 BYW77-150

RECTIFIERS
High Efficiency, 25A
FEATURES
•
•
•
•
•
•

DESCRIPTION
Designed to meet the efficiency"demand
of switching type power supplies, these
devices are useful in many switching
applications.
The low thermal resistance and forward
voltage drop o(this series allows the
user to replace 00·5 size devices in
. many applications.

Low Forward Voltage
Very Fast Switching
Low Thermal Resistance
High Surge Capability
Mechanically Rugged
Both Polarities Available

ABSOLUTE MAXIMUM RATINGS
UES701

UES702

UES703

Peak Inverse Voltage, VR..•.........................•..... 50V ••...•. 100V .•.... l50V ..
Repetitive Peak Inverse Voltag, VRRM ...............•.....•.. 50V ........ lOOV ....... l50V ..
Non·Repetitive Peak Inverse Voltage, VRSM ...........•...... 50V .••..•.. 100V ...•... l50V ..
Maximum Average D.C. Output Current 10 @ Te .................... 25A @ lOO°C ........ ..
RMS Forward Current, I. 'RMSI .......................................... 40A ............. .
Non·Repetitive Sinusoidal Surge Current (8.3mS), IFSM .•...••.......... .400A ........•. ~ •..
Thermal Resistance, Junction to Case, R'Je ..... " ..•................. 1.5°C/W ........... .
Storage Temperature Range, TSTG ................................. -55°C to +l75°C ....... .
Maximum Operating Junction Temperature, TJ M~ .••••••••••••••••••••• + l75°C ...•........

ABSOLUTE MAXIMUM RATINGS

BYW31·50 BYW31·100 BYW31·150
BYW77·50 BYW77·100 BYW77·150
Peak Inverse Voltage, VR........................ ; ......... 50V ......... lOOV ....... l50V ......... 50V ....... 100V ....... l50V ...
Repetitive Peak Inverse Voltage, VRRM ...................... 50V ........ .lOOV ....... l50V ......... 50V ....... lOOV ...... l50V .. .
Non·Repetitive Peak Inverse Voltage, VRSM ................. 50V ........ .lOOV ....... l50V ......... 50V ....... 100V ...... 150V .. .
Maximum Average D.C. Output Current, 10 @ T e = 100°C ........... 25A @ 100°C ......................... 30A @ lOrC .......... .
RMS Forward Current, I. 'RMSI .......................................... 40A ................................. 50A .............. .
Non·Repetitive Sinusoidal Surge Current (8.3mS), IFSM ................. 320A ................................ 500A .............. .
Thermal Resistance, Junction to Case, R9Je ..... , ..................... 1.5°C/W·.............................. 1.5°C/W ............ .
Storage Temperature Range, TSTG ................................ -55°C to +l50°C ...................... -55°C to +l50°C ........ .
Maximum Operating Junction Temperature, TJ MAX .....................+l50°C ............................... +l50°C ............ .

ELECTRICAL SPECIFICATIONS

Type

Maximum
Reverse
Voltage
VR

Maximum
Forward
Voltage
VF
Te= 25°C

UES70l
UES702
UES703

BYW31-50
BYW31-100
BYW31-150

50V
100V
150V

50V
lOOV
150V

0.95V

Te = l25°C

50V
100V
l50V

Te = 25°C

Te = l25°C

29$A

4mA

IF = 25A

IF = 25A

Rated VR

Rated VR

Te = 25°C

Te=IOO°C

Te = 25°C

Te = 100°C

1.3V

0.85V

@

@

@

IF = 100A
Te = 25°C

0.825V
@

1.1 V
@

IF = 63A

20/lA

@

@

IF = 20A

Rated VR

Te = lOO°C

Te = 25°C

Te= 100°C

I.
0.75V! lOA
O.85V i 20A
1.2V
100A

i

25/lA
@

Rated VR

35ns'"

2.5mA

@

Rated VR

v.

BYW77-50
BYW77-100
BYW77-l50

Maximum
Reverse Recovery
Time
tRR

Maximum
Reverse
Current
IR

50ns'2I

2.5mA
@

50ns'2I

Rated VR

(1) Measured In cercult IF = O.5A, I. = lA, I""c = O.25A
(2) Measured in circuit I, = lA to VR > 30V dl,/ dt = 20Alps

nn

SEMICONDUCTOR

~ PRODUCTS

4/82

2-74

_UNITRODE

UES701 BYW31·50 BYW77·50
UES702 BYW31·lQO BYW77·lQO
UES703 BYW31·150 BYW77·150
MECHANICAL SPECIFICATIONS

00-4

UES701 SERIES
BVW31 SERfES
BVW77 SERIES
ins.
.078 MAX.
.437, .015
.405 MAX.
D .800 MAX.
.430, .010
F .250 MAX.
G .424 MAX.
A
8

1.98 MAX.
1l.l0 ,0.38
10.29 MAX.
20.32 MAX .
10.92,0.25
6.35 MAX.
10.77 MAX.
1.68 MIN. DIA .

.066 MIN. OIA.

Notes:
1. Cathode is stud.
2. All metal surfaces tin plated.
3. Maximum unlubricated stud torque: 10 inch pounds,
4. Angular Orientation of terminal is undefined.

Maximum Forward Surge
vs. Number of Cycles
400

5300
I-

Z

UJ

tr
tr

a

200

"" ""

UJ

U

'"

i3UJ

/

a.

...

~

""

"::;:tr

V

l-

I

.02

~ .01
.01.02 .05.1.2

N

tp -

N

~

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

TJ

50

5

) v~
V /

30

I-

Z

UJ

20

tr

0:

:>

u 10
0

/

tr

~
tr

I

3

-~

L , II

1/, /

1
.4

,-/k'"

5 10 20 50100 200
PULSE WIDTH (mS)

1000

Reverse·Recovery Circuit
10 n

soo

;"
.1,
T = +7S·C
J

TJ

= +12S·C

+
_
-=-

/ III

25Vdc

IAPPROX.)

In

NOTE 3

/j

/ 1/

...0
I

= +150·:'-

.5 1 2

200

Forward Current
vs. Forward Voltage

80

[-f- r-

/

.05

UJ

-

--

V

.1

J:

'I'--..

.....

V"""

.2

::;:

J\A
~ICYC~E

100

.5

z

I,

-~

Thermal Impedance
vs. Pulse Width

OSCILLOSCOPE

NOTE!

=

- - = TYPICAL V,
----= MAXIMUM V,

NOTES:

1. OSCilloscope: Rise time ~ 3nsj input impedance = 500.
2. Pulse Generator: Rise time ~ 8nsj source impedance 100.
3. Current viewing reSistor, non~inductive, coaxial recommended.

/
.6
.8
1.0
Y, - FORWARD VOLTAGE (V)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

2-75

PRINTED IN U.S.A.

UES701 BYW31·50
BYW77·50
UES702 BYW31·100 BYW77·100
UES703 BYW31·150 BYW77·150

Typical Reverse Current
vs. Reverse Voltage
.001
.002

;;

.5

I I I

...crz

.05
.1

:J

.2

cr

...u


cr

...
...

I
-"

.5
1

V

50

..........

i~

.~

J

I-

zw

20

"I'-.

cr
cr
:J
u 15

I-

:J

j
~

+100"C
r- r ::::rI
:.-- T =+125"C

=

It
II

0-

I-

:> 10

f-- /

0

/

I
_0

5

I--

J

10
20

25

.J-+T -+25"C

.005
.01
.02

I-

Output Current vs.
·Case Temperature

::::r:-= +IS0"C

100
Tc -

150

175

CASE TEMPERATURE ("C)

UES701 SERIES'
BYW31 SERIES

I

130 120 110 100 90 80 70 60 50 40 30 20 10 0

v."- REVERSE VOLTAGE

125

"'" ~~

(% OF PIV)

Output Current vs
Case Temperature

~

25

\

~ 20
I-

~

a:
::>
u

\

15

\

I-

::>
0-

I-

::>

0

10

.1

100

125

150

\

\

175

T,-CASE TEMPERATURE("C)

BYW77 SERIES

UNITRODE " SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET" WATERTOWN, MA 02172
TEL. (617) 926·0404 " FAX (617) 924·1235

2~76

PRINTED IN U.S.A.

UES704
UES705
UES706
UES704HR2 _ _
UES705HR2 . . .
UES706HR2

RECTIFIERS
High Efficiency, 20A

FEATURES
• Very Low Forward Voltage (1.15V)
• Very Fast Recovery Times (50nSec)
• Low Thermal Resistance
• High Surge Capabi lity
• Mechanically Rugged
• Both Polarities Available

CHIP

Ttl'g3~£SS

DESCRIPTION
,: The UES704 series is specifically
designed for operation in power switching
: circuits operating at frequencies of at
least 20 KHz.
The low thermal resistance and forward
voltage drop of this series allows the
user to replace 00-5 size devices in
many applications.

METALLIZATION

~fC.:~

OIO~

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES704, UES704HR2 ................................ 200V
Peak Inverse Voltage, UES705, UES705HR2 ................................ 300V
Peak Inverse Voltage, UES706, UES706HR2 ................................. 400V
Average D.C. Output Current, 10 @ Te = lOO·C .............................. 20A
Surge Current. 8.3mS .................................................. 300A
Thermal Resistance, Junction to Case ................................... 1.5·CIW
Operating and Storage Temperature Range ...................... - 55·C to + 150·C
POWER CYCLING
These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75'C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applic":ltions, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.

MECHANICAL SPECIFICATIONS
UES704
UES704HR2

UES705
UES705HR2

UES706
UES706HR2

00-4

ins.
A

B .437
C .405
o .800
E .430
F .250
G
H

1.98 MAX.

.078 MAX.
±

.015

11.10 ±0.38
10.29 MAX.
20.32 MAX.
lD.92 ± 0.25
6.35 MAX.
10.77 MAX.

MAX.
MAX.

± .0lD
MAX.

.424 MAX.

.066 MIN. DIA.

1.68 MIN. DIA.

Notes.
1. Standard polarity is cathode-to-stud.
For reverse Polarity (anode·to-stud) add suffix IIR", ie. UES704R.
2. All metal surfaces tin plated.

3. Maximum unlubricated stud torque: 15 inch pounds.

n
L..::::Jn

4. Angular orientation of terminal is undefined.

4/79 (Rev. 1)

2-77

SEMICONDUCTOR
PRODUCTS

_UNITRDDE

UES704
UES704HR2

UES705
UES705HR2

UES706
UES706HR2

ELECTRICAL SPECIFICATIONS

Maximum
Type

l.25V
@ lOA
t. 300,,8

lO0V
300V
400V

UES704/704HR2
UES705/705HR2
UES706/706HR2.

=

* Measured in circuit IF = a.SA, I,. = lA, II\EC = O.2SA

Maximum

Maximum
Reverse Current

forward Voltage
Te =2S"C
Te = 12S"C

PIV

1.15V
@20A
t. 300,,8

=

Reverse
Recovery

Te =2S"C

Te =12S"C

Time*

5O"A

10mA

50nS

;

Output Current: vs.
Case Temperature

Peak OU!feut Current vs.
Case em perature
100

~
z

30

...

g

..,a:
II:

:>

20

...

r-

lE

...........

u

...:>
...:>

Q.

0

10

I

a:
a:

"'"

_0

0

80

:>

"" ""

...":>
...:>

60

Q.
0

'"~

'"

1

40

20

100
110
120
130 140 150
Te - CASE TEMPERATURE ("C)
70

Typical Reverse Current
vs. Reverse Voltage

Typical Forward Current
vs. Forward Voltage
100

~ 20
... 10

:t

"L

/

II:

V

1

~ .5

a:

~ .2
__ .1
.05
.02
.01

.::...

II

5

a2
~

v

~~ j

z

~

lOOK

~ ~V

50

/ I

zUJ

a:
a:
::J
u

1/

II

1- cJ /
1~H
'I'

"f-"f-

-

125'C

V

""ido'C

I

U)

/

I
-~

2:;-

-

10

ro-

II

I!/

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.11.2 1.31.41.5
V, - FORWARO VOLTAGE IV)

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT. STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

1.....

!f
IK :/

a: 100
>
UJ
a:

II (--' 1/ f- //

II

V f/.

UJ

~'v-11'

1111

--jlo,c

10K

UJ

"CJ"CJ

r- II

150

130

\10

90

Tc - CASE TEMPERATURE ("C)

o

10 20 30 40 50 60 70 80 90 100110 120130140150

V. -

2-78

/

~

REVERSE VOLTAGE (% OF PIV)

PRINTED iN U.S.A.

UES705
UES705HR2

UES704
UES704HR2

Maximum Forward Surge
vs. Number of Cycles

Thermal Impedance
vs. Pulse Width
w

300

~
I-

iii
a:
a:

200

"'"

~

./

"'" "

-.f\J'L

~ICYCLE

1

~

'" ~

w

....
I

100

1/
V

.02

~

co

'-..... r-50

20

.1

.05

l:

I

10
N -

/

::;

...J

--

V

w

0..

<>

I

_./'

.5

a

:>

_0:: 100

.
.
u

z

UES706
UES706HR2

N

.01
.01.02 .05.1 .2

.5 1 2

t, -

5 10 20 50 lOa 200

1000

PULSE WIDTH (mS)

200

CYCLES OF 60 Hz SINEWAVE

Reverse-Recovery Circuit
500

100

+

-=_

25Vdc
(APPROX.)

10
NOTE 3

OSCILLOSCOPE

NOTE 1

=
NOTES:
1. Oscilloscope: Rise time ~ 3nsj input impedance = 500.
2. Pulse Generator: Rise time ~ SnSj source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices specified UES704HR2, 5HR2, 6HR2.
SCREEN
High Temperature

MIL-STD-750
METHOD

CONDITIONS

1032

24 Hours @ TA = 150°C

2. Temperature Cycle

1051

F, 20 Cycles, -55 to +150oc. No dwell required
@ 25OC, t ~ 10 min ..@ extremes

3. Hermetic Seal
a. Fine Leak
b. Gnoss Leak

1071

1.

H, Helium
C, Liquid

4. Thermal Impedance
5. Interim Electrical Parameters
6. High Temperature Reverse Blocking
7. Final Electrical Parameters

UNITRODE - SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

Sage Test
GOINOGO
Similar to
Method 1040
GOINOGO

2-79

VF and IR @ 25°C
V, Sine Reverse, t = 48 Hours, Tc
= rating, F = 50-60 Hz, 10 = OA

= 125°C, VRW M

VF + IR @ 25°C
PDA = 10% (Final Electricals)

PRINTED IN U.S.A.

..

RECTIFIERS

UES801
UES802
UES803

High Efficiency, 50A and 70A
FEATURES
• High Continuous Current Rating
• Very Low Forward Voltage
• Very Fast Switching Speeds
• High Surge Capability
• Low Thermal Resistance
• Mechanically Rugged 00-5 Package

BYW78-50
BYW78-100
BYW78-150

DESCRIPTION
This Series is specifically designed
for operation in power switching circuits
operating at frequencies of at least
20KHz. The very low forward voltage and
very fast recovery time make them particularly suited for switching type power
supplies.

ABSOLUTE MAXIMUM RATINGS

UES801
UES802
UES803 BVW78·50 BVW78·100 BYW78·150
Peak Inverse Voltage, VR.................................. 50V ....... lOOV ....... l50V ....... 50V ...... lOOV ...... 150V ... .
Repetitive Peak Inverse Voltage, VRRM ...................... 50V ....... lOOV ....... l50V ....... 50V ...... lOOV ...... l50V ... .
Non-Repetitive Peak Inverse Voltage, VRSM ................. 50V ....... lOOV ....... l50V ....... 50V _..... lOOV ...... l50V ... .
Maximum Average D.C. Output Current, 1o @ Tc= 100°C. .. . . . . ... . . ... 70A.:............................. 50A' .............. .
Non-Repetitive Sinusoidal Surge Current (B.3mS), IFSM ................. BOOA ............................. l500A ............. .
Thermal Resistance, Junction to Case, R"c ............................................. O.BoC/W ............................. .
Storage Temperature Range, TSTG ..................................... .- ............ ~55°C to +1i5°C .......................... .
Maximum Operating Junction Temperature, TJ MAX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C .............................. .

ELECTRICAL SPECIFICATIONS
Maximum
Reverse
Voltage
VR

Type

Maximum
ForWard
Voltage
VF
Tc = 25°C

-

UESBOl
UESB02
UESB03

50V
lOOV
150V

BYW7B-50
BVW78-100
BYW7B·150

50V
lOOV
150V

Maximum
Reverse Recovery
Time
tRR

Maximum
Reverse
Current
IR
Tc = 25·C

Tc = l50°C

Tc = 150°C

O.975V

O.B4V

@

@

2~t

30mA

IF = 70A

IF = 70A

Rated VR

,Rated VR

Tc = 25°C

Tc= 100·C

Tc = 25·C

Tc = lOO·C

l.1V

50pA

O.B5V

@

@

IF = 160A

5mA
@

@

Rated VR

IF = 50A

50nsu1

@

60nsl2J

Rated VR

-

,

(1) Measured In CorCUIt I, - O.5A, IR ; lA, I REC ; O.25A
(2) Measured in circuit I,; lA, VR ; 30V, dl,/,,; 50A/ps

MECHANICAL SPECIFICATIONS
UES800 SERIES
BYW78 SERIES

00·5

ins.
~

A.

225

B

060 MIN.

C

.156

~

.005

020

o

156 MIN. FLAT

E

6670lA MAX

5.72

~

0.13

1.52 MIN
3.96 ~ 051
3.96 MIN. FLAT

090MA-'~-

677

!

.010 -

V.·28
UNF·2A

No'...
1.
2.
3.
4.

Standard polarity is cathode-to-stud.
All metal surfaces tin' plated;'
Maximum unlubricated stud torque: 20 inch pounds (20 kg. em).
Angular orientation of terminal is undefined.

nn

SEMICONDUCTOR

~ PRODUCTS

4/B2

_UNITRODE

UES801
UES802
UES803

Output Current vs.
Case Temperature

BYW78·50
BYW78·100
BYW78·150

Peak Output Current vs.
Case Temperature

Forward Current
vs. Forward Voltage
200 r---r---"""'--'--""'--"""7""71IT"--'

5:

70

tZ
UJ

a: 50
a:
:J

r-.....

~

":Jt0..

t:J

30

~

I--+--+-+----j,~y~'-II-_j

50

~-+_-~--r_f.f_f-t-I-I-~

~

~
~

_0

10

e~

220 1--"...,...-t---~----j-;-""DuC:tyC-C"'Y"'cl-::ie

I lBOI----t~~~~-,,-+---_j
r

~
o

fi1

I

g
B

a 201--+--+-~

0

100
Tc -

100

10 1--+--+---1

'"~
I

1

60~~~~~-~~~~~~~~~

'\

20

125
ISO
175
CASE TEMPERATURE C'C)

0.2

D.•

VF

-

0.6

0.8

10.

Average 01

Rectified.L:.I--:::........t~~"""~

Hal'Sine

~0~0~-~1720~--C-,.~0--~,760~~~~·

1.0

FORWARD VOLTAGE (V)

Tc - CASE TEMPERATURE (Ge)

Maximum Forward Surge
VS. Number of Cycles

Typical Reverse Current
vs. Reverse Voltage
.001
.002

800

5:
tZ

"'a:a:
:J
"I

600

'"I""

""-

400

-~
200

}

.005

<"

oS
t-

~

zUJ

~

fV'L

.05
.1

a:
a:

"I
_K

.2

)

.5
2

~ICYCIE

-./- _TJ=~IOO'C
-p--

~I~'C

~

~+15b'c
I I I

10
20
2
N-

10
20
50
100
CYCLES OF 60 Hz SINEWAVE

-

I-.01
.02 - I - - t- TJ = 2S'C

:J

............ t-=-

I--

I--

200

50

If
/I

V

J

130120 llO 100 90 80 70 60 50 40 30 20 10 0
VOLTAGE IN % OF PIV

Reverse·Recovery Circuit

Thermal Impedance
VS. Pulse Width
~

z

..--

.5

V',..,

g
~

25Vdc
(APPROX.)

10

OSCILLOSCOPE
NOTE I

NOTEl

/

:I:
l-

.02

~ .01
N

_

/V

'"

::;;
a: .OS

I

-=-

/V'

.1

"'

+

./

.2

::;;
.J

Ion

son

NOTES:

.01.02 .OS.I .2

.5 1 2 5 10 20 50 100 200
tp - PULSE WIDTH (mS)

1. Oscilloscope: Rise time

1000

~

3nsj input impedance

= son.

2. Pulse Generater: Rise time::;;;: ansj source impedance 100.

3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE ' SEMICONDUCTOR PRODUCTS

580 PLEASANT STREET, WATERTOWN. MA 02172
TEL. (617) 926·0404 ' FAX (617) 924·1235

2·81

PRINTED IN U.S.A.

UES804
UES805
UES806
UES804HR2
UES805HR2
UES806HR2

RECTIFIERS
HighEfficiency, 50A

fEATURES
• Very Low Forward Voltage (1.l5V)
• Very Fast Recovery Times (50nSec)
• High Surge Capability
• Low Thermal Resistance
• Mechanically Rugged '
• Both Polarities Available

DESCRIPTION
The UES804 is specifically designed
for operation in power switching circuits.
operating at frequencies of at least

20 KHz.
CHIP
MET"LlIIATiQN
lHlCKNESS
TOP". Al
0095

BACK ... "'U

0105

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UESB04,UES804HR2 ,.............
. , .. , .200V
'Peak Inverse Voltage. UES805, UES805HR2 ",.".,' .. , , . , .. , . .
. ...... 300V
Peak Inverse Voltage, UES806, UES806HR2 , .. , . , , .. , , . , . , , , . , .
.., ...... ,400V
Maximum Average D,C, Output Current @ Tc = 100°C ...................... , .. 50A
Surge Current, 8,3mS ........... , .. , .. , , .. , . , , . , , .. , , . , .' ... ,., ....... 600A
Thermal Resistance, Junction to Case ................ , , .. , .. , . , , , . , , . , .. , .8°C/W
Operating and Storage Temperature Range .... . . . . . . . . . . . .
. . - 55'C to + 150'C

POWER CYCLING
These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers,
In this stress· test, the case of the device is not heat sunk,
Full rated forward current is supplied ,to force a case temperature increase at least 75'C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off, Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles,

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers. for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors, Thus, the stresse's on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers,

MECHANICAL SPECIFICATIONS
>.

-F c
B~

UES80S
UES80SHR2

in~.

t-"i r

o

~·.r~~;
'M

UESati4
UES804HR2

K ~

J

~

A
B
C
D
E

.225!: .005

1.52 MIN .

.IS6!: .020

3.96'" 0.51

.156 MIN. FLAT

3.96 MIN. FLAT

. 667 DlA. MAX.

16.94 OIA. MAX .

,

.090 MAX.

,677:: .010

H

.375 MAX.

J

. 140 MIN. DlA.
1.000 MAX.

l

.450 MAX.

N

.438:!: .015
.078 MAX.

•

DO·S

mm
5.72!: 0,13

.060 MIN.

G

K

UES806
UES806HR2

2.29 MAX.
17.20:!: 0.25
9.53 MAX.
3.56 MIN, OIA .

25.40 MAX.
11.43 MAX •
11.13:!: 0.38
1.98 MAX.

Nates:
1. standard polarity is cathode·to·stud.
For reverse polarity (anode~to-stud) add suffix IIR", ie. UES804R.
2. All metal surfaces tin plated.
.
3. Maximum unhlbricated stud torque. 30 inchp.unds.
4. Angular orjentation C?f termi!lal is ~ridefineci. .
-

nL::::::Jn

SEMICONDUCTOR
PRODUCTS

4}79.(Rev. 1)

2-82

_UNITRDDE

UES804
UE5804HR2

UES805
UESB05HR2

UES806
UESB06HR2

ELECTRICAL SPECIFICATIONS

Type

PIV

200V
300V
400V

UES804/804HR2
UES805/805HR2
UE5806/806HR2

Maximum

Maximum

Maximum

Forward Voltage

Reverse Curent

T c =2S'C

Tc = 12S'C

Tc _ 2Sc C

Tc _12S'C

1.2SV
@ IF=SOA
t. =3001'5

1.1SV
@I F=50A
tp =3001'S

7O,IA

30mA

Reverse
Recovery
Time*

SOnS

* Measured in circuit IF = a.SA, IR, = lA, IIEe = O.2SA

Output Current vs.
Case Temperature

Peak Output Current VS.
Case Temperature
200 r-----~--~-r-----r--~-.----_,

60

~ 50

!z

40

UJ

c:
c:

r-...

ISO p,,--t-----'\iI-----t--;

~I'-.

30

~

:> 20

o

10

110

120

~~~+_~.__r--~-+----~----~

'"'
>-

~ 100 r---~~--~~~~_+~---i----_;
:::l

o

130

140

SOr-----f---~~~~~~~_i~--_;

-~ 60

\

o
100

140

0:
0:

:::l

"1'\ '\

!;

~

~

'f'"

:>
<.l

$160r---~i_-----r~--_+--_;~----_;

>-

~~

__rl_~--_r--~~~~~1_--~

I

1

40

r-----~~~~--~-f~~~~--_;

150

70

90

110

T, - CASE l£MPERATURE ('C)

Typical Reverse Current
VS. Reverse Voltage

Typical Forward Current
VS. Forward Voltage
1K

100 K

500
_ 200

50

:>

'"'"
u

20

o

10

'"~
'"...

!

l-::: P' VV'
V. V V ./
~ VV



.1

II

'"
'"

!::::::

K

-+- r-

L

lOO'C

r-

U)

UJ

~
c:

I

"I

1

10a

2S' C

-

,..... L

a

1/
1

a

.1 .2 .3 .4 .S .6 .7 .S .9 1.0 1.11.2 1.31.4 1.51.6
V, - FORWARD VOLTAGE (V)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

If

V,
IL

<.l

--"''In-V
"'{
11 1 Ii A
//1/

C

12S'C

z

II

T

Kil'"

10

UJ

--f-/" ~,'"'f .eN
- -~Q
:;:"i- "i--I
••

o

I"'":

-I-- t-

10 20 30 40
V. -

2-83

50 60 70 80 90 100 110 120130140

REVERSE VOLTAGE (% OF PIV)

PRINTED IN U.S.A.

UESB04
UES804HR2

Maximum Forward Surge
VS. Number of Cycles
600

g

500

zOJ

400

~

z

i5

I

"

-~ 200

~

~

...

..-1--

.5

............

./'

.2

.

.J

"'-

-f\J'L

~ICICLE

.1

VV

:;;

a:: .05
OJ

~

J:

l-

I

....... I---

.02

V

~ .01
N

V .

~,v

:;;

""-

UES806
UES806HR2

Thermal Impedance
vs. Pulse Width

:",

a:
a:
:>
u 300

UES805
UES805HR2

.01.02 .05.1 .2

100

tp -

.5 1.2 5 10 20 50100 200
PULSE WIDTH (mS)

1000

o
1
N-

10
20
50
100
CYCLES OF. 60 Hz SINEWAVE

200

Reverse·Recovery Circuit
Ion

SOP.

+
_
-=-

25Vdc
(APPRO:W;.)

In

NOTE 3

OSCILLOSCOPE

NOTEl

=
NOTES:
1. Oscilloscope: Rise time :s;;; 3n5; input impedance

= SOD.

2. Pulse Generator: Rise time :s;;; 8nsj source impedance 100 .
. 3. Current viewing resistor, non-inductive, coaxial recommended.

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices specified UES804HR2, 5HR2, 6HR2.
SCREEN
High Temperature

MIL·STD·750
METHOD

CONDITIONS

1032

24 Hours @ TA = 150°C

2. Temperature Cycle

1051

F, 20 Cycles, -55 to +150°C. No dwell required
@ 25°C, t ~ 10 min. @ extremes

3. Hermetic Seal
a. Fine Leak
b. Gross Leak

1071

l.

H, Helium
C, Liquid

4. Thermal Impedance
5. Interim Electrical. Parameters
6. High Temperature Reverse Blocking
7. Final Electrical Parameters
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

Sage Test

GO/NOGO
Similar to
Method 1040

GO/NOGO

2·84

VFand IA @ 25°C
1/; Sine Reverse, t = 48 Hours, Tc = 125°C, VRW M
= rating, F = 50·60 Hz; 10 = OA

VF + IA @25°C
PDA = 10% (Final Electricals)

PRINTED IN U.S.A.

RECTI,FIER'S

UES1001-UES1003

High Efficiency, 1A
FEATURES
• Very Fast Recovery Times
• Very Low Forward Voltage
• Small Size
• Convenient Package

DESCRIPTION
An axial leaded power rectifier useful
in many switching applications.
Particularly suited where very fast
recovery and low forward voltage are
required.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES1001 .............................................................. 50V
Peak Inverse Voltage, UES1002 ............................................................. 100V
Peak Inverse Voltage, UES1003 ............................................................. 150V .
Maximum Average D.C. Output Current at TL = 75°C, L=3/8" ....•.........•.............. _ ....... 1A
Non-Repetitive Surge Current at8.3mS ....................... _............................... 30A
Thermal Resistance at L = 3/8" ........................................................... 75 °CIW
.Operating and Storage Temperature Range ......................................... -55°C + 175°C

ELECTRICAL SPECIFICATIONS
Type

PIV

UES1001
UES1002
UES1003

50V
100V
150V

TJ =2S·C

TJ =100·C

@ TJ =2S·C

@ TJ =100·C

Maximum
Reverse
Recovery
Time'

.975V
@
1A

.895V
@
1A

2"A

5O"A

25nS

Maximum
Reverse Current (IR)
@PIV

Maximum
Forward Voltage (VF)
@

'Measured In circuit IF = .5A, IR = 1.0A, IREC = .25A

MECHANICAL SPECIFICATIONS
BAND INDICATES
CATHODE END

~
'V

r

·155TYP.
3.9mm

l-

UES1001·UES1003

r:-

BODVA

.085 MAX.

2.16mm

II l.
J ~
~==~~~==~~~~~~~~~~'~t

c::=::J....

~OO MIN.
1-

17.8mm

.250 MAX~

6.35mm-

+

L.030t.OO1
O.77mm t.03
-

055 TYP.
. 1.4mm .

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONOUCTOR

~ PROOUCTS

1/80

2·85

_UNITRDDE

UES1001-UES1003

Typical Forward Current
vs. Forward Voltage

Output Current
vs. lead Temperature

1

1,,-

~~

r-"IJ I -

"'-.
~

L=1!a"

"

'"

"'-.

""""-I--.

L=:V4"

.1

0:

75

'"

125

.005

150

.1

I-

15

fT = 25°C

0:
0:

'"
u

J

.5

I

/

II . /I-.' ...~

.01

I

/

.002

~

I-

Il~~~;1,"fl~
II

v

;{ .05

.3

00

J...'>

_- .02

"'-. '\.

100

f--f--

I

r--....: .\
50
Tl -

.2

15
0:

B.05

"'"
..........

L _ 3k"

25

/

V/ /
I/;,"

.01

1/:1

.5

5
I-

T,

~

J,iJJ

--

Ld~ 1,-

"'"

Typical Reverse Current
vs. Voltage
.001

10

10

.1 .2 j

175

LEAD TEMPERATURE tOe)

-

1

I--"

+75°c

TJ

1---1-"

+125°c

'"

100

.4.5 .6 .7 .8 .91.01.11.21.3
Vf

=

~;-

50

I

,001

T

120

100

80

60

40

20

VOLTAGE IN % OF PIV

VOLTAGE (V)

pe.ak Output Current vs.
lead Temperature
Forward Pulse Current
vs. Duration

4.0 f-".....+--I--I-~.....:-1I-:-:::-:-1I--I-I
10,000

~
~ 3.2

l--+-+-"'d----I--+-*-+--+-!

g

'"=>

'"
"t:;

0l-

Dura~i~~afr;r ~~~~R~-:::~ii~~spuise

5,000

I-

~ 1,000

'"

SOO

'"
'"
..
'"

100

0:
0:

2.4 ,"",:-+---'l"-<:'--+---I~-+--~:--+-!

..........



o

~

'";:S1.61-=",""""",+-''''''~-I~...+-'~+-\:-t-l
0-

I
10

.8

-- - -r--_

so

.],u.s

.5

so

lO}lS
looP.5
PULSE DURATION

5
.IOms

1m,

T, - LEAD TEMPERATURE (OC)

Multiple Surge Current
vs. Duration
100



u

<.J
I-

I-

30

::>

:J

0-

Q.

I-

0-

::>

:J

o
I

Reverse
Recovery

=100'C
200pA

Output Current vs.
Lead Temperature
2.5

Maximum

Maximum
Reverse Current

0

'"i'J

.5 1--+-+---_j~O+\_+---_j

20

0-

_0

I

J
50
TL -

10

75
100
125 150
LEAD TEMPERATURE ('C)

1. - LEAD TEMPERATURE ('C)

Typical Reverse Current
vs. Reverse Voltage

Typical Forward Current
vs. Forward Voltage
10K

10

5:

~

::::::: ~ ~

//
v,. / /

I-

Z

"'0:

a:

~

~ I /

:J
U

o
.IL

II
~

.001

UJ

:J.

I

r--.;i.;i .{:'
II

I..~

k

1/

II II

~.,

.lr'C

UJ

III

...a:

~tol/
.Jt-"
{?~;,

1/

~ 100
u

II

@ .1
~
a:

K

~

iiia:

i?
I

0

V

1000C

I

~.,/

--

1. 0

2rC,

Ij I V
.0 . 1

.1 .2 .. 3 .4 .5 .6 .7 .8 .9 1.0 1.11.21.31.41.5
V, - FORWARD VOLTAGE IV)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA02172
TEL. (617) 926-0404 •.FAX (617) 924-1235

2-90

m
W
M
rn
, v. '- REVERSE VOLTAGE (% OF PIV)
~

~

~.~

_

PRINTED IN U.S.A.

UESl104

UESl105

UESl106

ID
Output Current vs.
Ambient Temperature.

Multiple Surge Current
vs. Duration
100

"'"

...z~ .8
'"'"
:>
'"
u

.6

...
...
:>

.4

I

.2

:>

Q.

l'-.

'"

~
0:

o

25

50

75

'"

~

60

"-

'"

c:J

0:

'\

0

_0

c:J 80

z

'\

~

...

1\

'"

i"o

~

o

ffl 20

\

100

40

125

TL MOUNT
@Length =~..

i'-- R:::jPrinted Circuit

\

1

1

2

5

10 20

50

100 200

l'

SOO

1000

CYCLES AT 60 Hz SINE WAVE

150

TA -AMBIENT TEMPERATURE ('C)

Reverse·Recovery Circuit
10

50!!

-=_

~!

25Vdc
(APPROX,)
It!
NOTEJ

OSCILLOSCOPE
NOTE!

=
NOTES:

1. Oscilloscope: Rise time ~ lnsj input impedance = 50n.
2. Pulse Generator: Rise time :s;; 8nsi source impedance 100.
3. Current viewing resistor, nonainductive, coaxial recommended •

• OPTIONAL HIGH RELIABILITY (HR2) SCREENING (See lN6620·1N6625)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL, (617)926·0404. FAX (617) 924·1235

2·91

PRINTED IN U.S.A.

RECTIFIERS

UES1301 BYV28-50
UES1302 BYV28-100
UES1303 BYV28-150

High Efficiency, 3.5A
FEATURES

DESCRIPTION

• Very Fast Recovery Times
e Very Low Forward Voltage
• Small Size
• Convenient Package

An axial leaded power rectifier useful
in many switching applications.
Particularly suited where very fast
recovery and low forward voltage are
required.

ABSOLUTE MAXIMUM RATINGS
UES1301

UES1302

UES1303 BVV28-50 BVV28-100 BVV28-150

Peak Inverse Voltage, VR .........••.......................... 50V ..•.•.. lOOV .•.... 150V ...... 50V ....•.. lOOV ...... 150V ..
Maximum Average D.C. Output at TL = 75°C, L = %" 10 ................•.. 6.0A ...............•....•.....•.. 3.5A ..•......•....
Non-Repetitive Surge Current at 8.3ms, 1'8M ..•..••....•....•..••.......• 125A ............................. 80A ...•........•.
Thermal Resistance at L %", R.Jc .............•....................•... 20°C/W ...•........•.............. 25°C/W ..•..........
Junction Operating Temperature, Ti .............•....................... 175°C .....................•..... .165.o.C ...•....•..•..
Operating and Storage Temperature Range ........; .....................•.•........•. -55°C to +175°C ................•.........

=

ELECTRICAL SPECIFICATIONS
Maximum
Reverse
Voltage
VR

Type

UES1301
UES1302
UES1303

50V
lOOV
150V

BYV28-50
. BYV28-100
BYV28-150

50V
lOOV
150V

Maximum
Forward Voltage
@

TJ = 25°C

TJ = lOO°C

.925V

:850V

@

@

. 6A

6A

TJ = 25°C

"Measured in circuil iF

Maximum
Reverse Current
@ Rated VR

LlOV

-.

TJ = 165°C
.75V

@

@

5A

3A

.-

TJ = 25°C

TJ = lOO°C

5pA

150pA

TJ = 25°C

TJ = lOO°C

IpA

150pA

1_9~V

Maximum
Reverse
Recovery
Time"

30ns

30ns

5A

I

=O.5A, i. =l.OA, i. =.25A
EO

MECHANICAL SPECIFICATIONS

r

BAND iNDiCATES
CATHODE END

~

.lZ~~:

~

c:=J C

II

Mi~l~oo MA'S-

,----,975
,_. --248mm

7.62mm-

UES1300 SERIES
BVV28 SERIES

BODV B

i., t

_145 MAX.
3.68mm

c:::=J

4

L
'--

:040 ±.OOl
L02mm±.03

.~-~~;;;-

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONDUCTOR

~ PRODUCTS

4/82

2-92

_UNITRODE

UES1301 BYV28·50
UES1302 BYV28·100
UES1303 BYV28·150
Output Current
vs. Lead Temperature
12

\.

10

g
!Z...
~

-1r.I'-

"- 1\

"

L=:I8'''''''

6

"'"

L_W'

I

25

20

"-

:1

I
I-

'"
r-....

\

r~~p:c

.5

"I

\

,..,..

'"

.05

~

.02

"

.01

175

8

t-rlt

.1

U

~

I

It
20

I

...' /

100

II

I

200

/ I

1000

1
120

100

~~

=+125°C
I Li

l-

I'

i

6S C

80

60

40

20

VOLTAGE IN % OF PIV

.1 .2 .3 .4 .5 .6 .7 .8 .91.01.11.21.3
VF -

f-I-

-25°C

T' =1 +1

J

l-

J,
1

TJ

l-

I-

VOLTAGE (V)

Reverse-Recovery Circuit

so ~!

10 !!

+
_

25Vdc

-=-

~

.

2

a:
a:

iT

t-

::J

!
1/:;: ,...'~1.'~
...

:::

.2

.'\.1\

~

1// 1/

Z

w
a:
a:

::J

g
::J

1
I-

I-

"

.1
.2

~

Peak Output Current vs.
Lead Temperature

a:
a:

T J _-SO·C

;;-:;..-

~

10

_

75
100
125
150
LEAD TEMPERATURE C·C)

50
TL -

...:;::::-:

\

~

::J
U

T,

J...-fL L

.02

50

~-

L-V.':\

.01

100

i--

'\.

Typical Reverse Current
vs. Voltage

Typical Forward Current
vs. Forward Voltage

(APPROX.)
11!

12

OSCILLOSCOPE
NOTEl

NOTE 3

I-

::J

I-

::J
0

"~

NOTES:

1

1. Oscilloscope: Rise time<3nS; input Impedance = 5OQ.
2. Pulse Generator: Rise time" BnS; source Impedance 102.
3. Current viewing reSistor, non-inductive, coaxial recommended.

4

50

70

90

110

130

150

170

T, - LEAD TEMPERATURE (OC)

Multiple Surge Current
vs. Duration
100

"

z

~

80

~

a: 60

""'a:~ 40

...o

If.

Forward Pulse Current vSo Duration
10,000

I"-

5,000

""-

g.

'" ....

1

"""""'- ;-.

!z 1,000

~

20

ll!0:

Tl MOUNT
@ Length

I'--

=:va"

r--

500

::J
U

...

R=:±--

~
:>

..

.1

1

Square Pulse Current vs. '.:
Duration for Non-Repetitive Pulse

-........

.............. .......

100

r--

50

...

'

printed CIrCU(

10
I

2

5
10 20
50
100 200
CYCLES AT 60 Hz SINE WAVE

UNITRODE ° SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET ° WATERTOWN, MA 02172
TEl. (617) 926·0404 ° FAX (617) 924·1235

500

1000

.5
.1#,5

2-93

11&5

50
10#'s
1001&5
PULSE DURATION

5

1m.

5
10ms

PRINTED IN U.S.A.

III

RECTIFIERS

UES1304
UES1305
UES1306

High Efficiency, 5A

FEATURES
• Very Low Forward Voltage (1.15V)
• Very Fast Recovery Times (50nSec)
• Small Size
• High Surge

DESCRIPTION
The UES1304 series is specifically
designed for operation in power switching
. circuits operating at frequencies of at
least 20 KHz.
THI~~~ESS Mf6~lllZAT1EN
008

BilCK

AU

1iB9

ABSOWTE MAXIMUM RATINGS
Peak Inverse Voltage, UES1304 .
..... 200V
Peak Inverse Voltage, UES1305 .
.300V
' .. 400V
Peak Inverse Voltage, UES1306
Maximum Average DC Output Current, 10
@ TA = 25°C (Free Air) .................. .
.. ..... 3A
@~=~~L=~ ................. .
.. .. 5A
Surge Current, 8.3mSec ................... .
........ 70A
Thermal Resistance @ L = o/a" ..
. .20°CfW
Operating and Storage Temperature Range ....
. ... -55OC to +150OC

MECHANICAL SPECIFICATIONS

r

BAND INDICATES
CATHODE END
~

UES1304

.175TYP.

II

~975 MIN1~0 MA~

1-----24.8mm

7.62mni

~

UES1306

BODY B

+. t

.145 MAX.

. 4.4mm

c:=::J

UES1305

3.68mm

=

+

L
l-

.040±.001
l.02mm±.03

.115TYP.
2.9mm

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONDUCTOR

~ PRODUCTS

4/79 (Rev. 1)

2-94

_UNITRODE

UES1304

UES1305

UES1306

ELECTRICAL SPECIFICATIONS
Maximum
Forward Voltage

PIV

Type

UES1304
UES1305
UES1306

200V
300V
400V

* Measured in circuit IF =

Maximum

Maximum

Reverse
Recovery

Reverse Current

TJ =2S·C

TJ = 100·C

@ PIV, TJ = 2S·C

TJ =100·C

Time*

1,25V
@3A
tp = 3OOl'S

1.15V
@3A
tp = 3OOl'S

2Ol'A

5OOl'A

SOnS

a.SA, IR = lA, IREC = O.2SA

Output Current
vs, Lead Temperature

Peak Output Current YS,
Lead Temperature
20

r-..

~

'\

~~

~ 16

>-

15

'"::J'"
u

I

L;:::

~tt

1\

iC
>-

::J

a

\
o
25

12

>-

'"~
,

\

50
75
100
125
150
Tl - LEAD TEMPERATURE C·C)
T, - LEAD TEMPERATURE C·C)

Typical Reverse Current
vs. Reverse Voltage

Typical Forward Current
vs. Forward Voltage
10 K

10 0

1/

1/
~

...

10

...~
z

Z

"'0::
0::

::>
u
o

O. 1

0::

...

o
I

_~

10 o

~?n
... '" .()
,/1 !(?

"'ffi
iii0::

10

I

~

-"

1. 0

'I

en

..... r§ '£Jv

.0 1

j....

I

100·C

I

II

1

I-f-I-

.00 1
0.0 0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2

O. 1

V, - FORWARD VOLTAGE IV)

UNITRODE. SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172

2·95

25"1

I
20

V, -

TEL (617) 926·0404 • FAX (617) 924·1235

.I

125"C

~

::>
u

tl/

0::

~

"'a:0::

1

....

K

40

60

80

100

120

140

160

180

REVERSE VOLTAGE (% OF PIV)

PRINTED IN u.s.A.

..

UES1304

Output Current vs
Ambient Temperature

~
~

2.5

....

z

~

~

2

'"

::>

~ 1.5

Q,

....
::>

_0

'\

......

""-

""'- r---.

r-

~

I\.

o
25

T. MOUNT
@lentth=~"

Iii=::=

I-

Pflnted Circuit

J L

1\

.5

UES1306

Multiple Surge Currentvs. Duration
100

\

::>

o
I

'""

UES1305

I

5

2

\

10 20

50

100

200·~

500 1000

CYCLES AT 60 Hz SINE WAVE

50
75
100
125 150
TA - AMBIENT TEMPERATURE ('C)

Reverse·Recovery Circuit
SOil

10 II

+
_

-=-

25Vdc
(APPROX.)·

III
NOTEl

OSCILLOSCOPE

NOTE 1

=

NOTES:
1. Oscilloscope: Rise time :s;;; 3"s; input impedance son.
2. Pulse Generator: Rise time ~ 8ns; source impedance-lOO.

=

3. CUrrent viewing resistor, non·inductive, coaxial recommended.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926.Q404 • FAX (617) 924·1235

2·96

PRINTED IN U.S.A.

UES1401
UES1402
UES1403
UES1404

RECTIFIERS
High Efficiency, 7 A and 8A

BYW29-50
BYW29-100
BYW29-150
BYW29-200

BYW80-50
BYW80-100
BYW80-150
BYW80-200

FEATURES

DESCRIPTION

•
•
•
•
•

The UES1400/BYW29/BYW80 Series, in a plastic package similar to the TO·220, is
specifically designed for operation in power switching circuits to frequencies in excess
of 100KHz. The very low forward voltage and very fast recovery time make them
particularly suited for switching type power supplies.

Very Low Forward Voltage
Very Fast Recovery Times
Economical, Convenient Plastic Package
Low Thermal Resistance
Mechanically Rugged

ABSOLUTE MAXIMUM RATINGS
UES1401 UES1402 UES1403 UES1404
Peak Inverse Voltage, VR....•.......•....•................•..•..•....•..................... 50V ..... 100V ..... 150V .... 200V
Repetitive Peak Inverse Voltage, VRWM ..................................................... 50V ..... 100V ..... 150V .... 200V
Non·Repetitive Peak Inverse Voltage, VRSM ................................................. 50V ..... 100V ..... 150V .... 200V
Maximum Average D.C. Output Current,lo
@ Te = 125°C, (Note 1) .............................................................. 8.0A .................... .
@T.= 25°C ......................................................................... 3.0A .•.........•.........
@T. = 25°C, (Note 2) ..........................................................' ...... 8.0A •....................
Non·Repetitive Sinusoidal Surge Current at 8.3 ms, l,sM ................................................ 80A •.....................
Thermal Resistance, Junction to Case, RDJe ........................................................ 2.5°C/W .................. .
Thermal Resistance, Junction to Ambient, RDJ....................................................... 60°C/W .................. .
Storage Temperature Range, TSTG ............................................................. -55°C to + 150°C .............. .
Maximum Operating Junction Temperature, Tim..................................................... +150°C .................. .

Note 1. Above 100°C use the tab for electrical connection.
Note 2. Using Wakefield Type 295 heatsink with convection cooling. For more definitive data refer to
the Output Current vs. Temperature Curves on this datasheet.

BYW29·50 BYW29·100 BYW29·150 BYW29·200 BYW80·50 BYW80·100 BYW80·150 BYW80·200
Peak Inverse Voltage, VR ..................... 50V ..... 100V ..... 150V
200V
50V
100V
150V .... 200V
Repetitive Peak Inverse Voltage, VRWM ...... ... 50V ..... 100V ..... 150V ... 200V ..... 50V .... 100V ... 150V .... 200V
Non·Repetitive Peak Inverse Voltage, VRSM •... 50V •..•. 100V ..... 150V ... 200V .•... 50V .... 100V ... 150V .... 200V
Maximum Average D.C. Output Current
@ Te = 125°C, (Note 1) ................. 7.0A ..................................... 7.0A .................... .
Non·Repetitive Sinusoidal Surge Current at 8.3ms, • .. .. .. .. .. .. .. ... 80A .......................... 100A .................... .
Thermal Resistance, Junction to Case, RDJe ......................................... 2.5°C/W ................................ ..
Thermal Resistance, Junction to Ambient, RDJ. ...................................... 60°C/W ................................ ..
Operating and Storage Temperature Range .................................... -55°C to +150°C ............................. ..
Maximum Operating Junction Temperature, Tim..................................... +150°C ................................. ..
Note 1. Above 100°C use the tab for electrical connection.

MECHANICAL SPECIFICATIONS
UES1401 SERIES
BVW29 SERIES
BVW80 SERIES

SEAT1NG
PLANE

rS-1

~rFS c

e--;

A

I

IL.J.LL

IIL1 21T
~TA'A
I
f-A
_ IJ

-I

j

~-

,~-l

MILLIMETERS

DIM

MIN

MAX

A
B
C

14.23
9.66

15.87
10.66

356

4.82

0.51
3.531
2.29

1.14
3.733
2.79

0.38

0.64

12.70
1.14
4.83
2.54
2.04
1.14
5.85

14.27
177
5.33

D
I

2

•

A":-H

I IT

j'F
E:
i

JI

r- I PIN 1. Cathode

.

G

o

N

......

2. Anode
Tab is connected

. to Cathode.

F
G

H
J
K

L
N

Q
R
S
T

INCHES
MIN
MAX
0.560
0380
0.140
0.020
0.139

0.090

635

304
2.92
1.39
6.85

TO-220AC

0.015
0.500
0.045
0.190
0.100
0.080
0.045
0.230

0625
0.420
0.190
0.045
0.147
0.110
0.250
0.025
0.562
0.070
0.210
0120
0.115
0.055
0.270

nn

SEMICONDUCTOR

~ PRODUCTS

12/83

2-97

_UNITRDDE

..

UES1401
UES1402
UES1403
UES1404

BYW29·50
BYW29·100
BYW29·150
BYW29·200

BYW80·50
BYW80·100
BYW80·150
BYW80·200

ELECTRICAL SPECIFICATIONS

Type

TJ = 25·C

TJ = lOO·C

Trr

TR = 8nS

O.8V@4A
O.895V@8A

5pA

150pA
150pA
150llA
500pA

35nS'

1.4\1

-

L300V
@
20A

0.850V
@
5A

-

600pA

35nS2

L4V

-

L25V
@
22A

0.850V
@
7A

lOpA

ImA

35nS2

-

i5nc 3

TJ = 25·C

TJ = lOO·C

UES1401
UES1402
UES1403
UES1404

50V
100V
150V
200V

0.9V@4A
O.975V@8A
tp =300pS

BYW29·50
BYW29·100
BYW29·150
BYW29·200

50V
lOOV
150V
200V

BYW80·50
BYW80·100
BYW80·150
BYW80·200

50V
lOOV
150V
200V

Maximum
Reverse Current, IR
@ratedVR

Typical
Forward
Recovery
Voltage
@lA

Typical
Forward
Recovery
Charge
QRR@25·

Maximum
Forward Voltage, VF

Maximum
Reverse
Voltage
VR

Maximum
Reverse
Recovery
Time

NOTES: L Measured in circuit IF = O.5A, IR = l.OA, IREC = O.25A
2. Measured in circuit IF =lA to VR '" 30V, diF/dt =50A/pS
3. Measured in circuit IF

=2A, VR s: 30V, diF/dt =-20AlpS

Output Current
vs Temperature

Peak Output Current vs
Case Temperature

10f---+-+

g

...

~

~

g

...z

18~~~r-~~~~~--~-;~r--;

:>

u

...~

....
a:
a:

14~----t-~~~~~~.-~~~~

:>

J

o

o

~ 10~----~---1--~~--~~~~~

I

~
I

oL-_~

50
75
100
125
TEMPERATURE ('C)

100

150

5,000
1,000

I'-- ,

..g500

I.

I

........

100

:::

50

w

"r--.

60

"
:>

40

f.

20

...'"
0

o

10

.5
.1p$

"

0:

~

£

80

~

0:

..........

0:

~

"z

Peak Half Sine Current vs.
~ Duration for Non-Repetitive Pulse

Z

I

50
!,as

lOllS

100,,5

130

__

140

~

150

Multiple Surge Current vs. Duration
100

I

W

~_~~_~

120

T, - CASE TEMPERATURE ('e)

Forward Pulse Current vs. Duration
10,000

__

110

Ims

IOmS

2

" "-

..............

---

5 10 20
50 100 200
CYCLES AT 60 Hz SINE WAVE

500 1000

PULSE DURATION

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172

TEL (617) 926-0404 • FAX (617) 924·1235

2·98

PRINTED IN U.S.A.

BYW29·50
BYW29·100
BYW29·150
BYW29·200

UES1401
UES1402
UES1403
UES1404

Typical Forward Current
vs Forward Voltage

Typical Reverse Current
vs Voltage
.01

100 .---r-r---r---r---r--.-,-.---.--.-r-"

50~-+~~4-+-~~~~~~"~

20
10

H--t--t-t-+-+----!-IIPAy~"..~q~_H

f-+-t-l-+-+--hfi~~[/f-.¥--V'+-+---+--l
l& III

~
I-

-f-

"'

II:
II:

.5

::J


u

f-+-I--H-+--1

II ....' ~ II

I

f-

I-

-~~ l:fl¥

-II

iJ,-rr

.1
.2

I'll

!oJ

IA

.02

lA

Z

. BYW80·50
BYW80·lQO
BYW80·150
BYW80-200

200

.02
.01 L..l.Ic.J.L.L...IJL.l.I...IL-'--L..L-L..L.J-l
.1 .2 .3 .4 .5 .6 .7 .8 .9 I.OI.ll.21.3

1000

~
120

T( 1~12j'CI
100
eo 60 40 20
VOLTAGE IN % OF PIV

V, -VOLTAGE (V)

Thermal Impedance
vs Pulse Width

~
~

2.5

r--~

1.0

~

.25

I........ "

In

OSCILLOSCOPE
NOTE I

=NOTES,
1 OSCilloscope: Rise time S. 3n5; Input Impedance = 500
2 Pulse Generator' Rise time S 8ns; source Impedance 100.
3. Current viewing resistor. non·induclrve. coaxial recommended

/

.01.02 .05.1 .2

(A~~~~~)
NOTE 3

V~

.1

.OS

+
::::

.5

j

Reverse-Recovery Circuit
ton

50n

.5 I 2
tp -

5 10 20 50100200

1000

PULSE WIDTH (ms)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235'

2-99

PRINTED IN U.S.A.

REC-TIFIERS

UES1501
UES1502
UES1503
UES1504

High Efficiency, 16A

FEATURES
•
•
•
•
•

DESCRIPTION

Very Low. Forward Voltage
Very Fast Recovery Times
Economical, Convenient TO-220 Package
Low Thermal Resistance
Mechanically Rugged

The UES1500 Series, in the economical,
convenient TO-220 package, is specifically
designed for operation in power switching
'circuits to frequencies in excess of
100kHz. The very low forward voltage and
very fast recovery time make them
particularly suited for switching type
power supplies.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES1501 ................................................. 50V
Peak Inverse Voltage, UES1502 ................................................ 1OOV
Peak Inverse Voltage, UES1503 ................................................ 150V
Peak Inverse Voltage, UES1504 ................................................ 200V
Maximum Average D.C. Output Current
@Tc 100°C ........................... 16A
@To = 25°C ........................... 3.3A
@To 25°C (Note 1) ................. 1O.OA
Non-Repetitive Sinusoidal Surge Current, 8.3ms .................................. 300A
Thermal Resistance, Junction to Case, 9J-C •••••••••••••••••••••••••••••••••• 1.5°C/W
Thermal Resistance, Junction to Ambient, 9J- o ............................... 60°C/W
Operating and Storage Temperature ................................ -55°C to + 150°C
Note: 1. Using Wakefield Type 295 heatsink with convection cooling. For more definitive data refer

=
=

to the Output Current vs Temperature Curve on this data sheet.

MECHANICAL SPECIFICATIONS
UES1501-UES1504
INCHES
MIN
MAlI
0
B

C
0
F

Dr

H

G

,~

H
J

SECTA·A

K

JI8~:\.~

dI

D

No--

L PIN I. Cathode
G PIN 2. Anode
Tab is connected
to Cathode.

l
N
Q

R
S
T

0.560
0.380
0.140
0.020
0.139
0.090
0.015
0.500
0.045
0.190
0.100
0.080
0.045
0.230

TO-220AC

MILLIMETERS

MIN
MAX
0.625 14.23 15.87
0.420 9.66 10.66
0.190 3.56
4.82
0.045 0.51
1.14
0.147 3.531 3.733
0.110 2.29
2.79
0.250
6.35
0.025 0.38
0.64
0.562 12.70 14.27
0.070 1.14
l.n
0.210 4.83
5.33
0.120 2.54
3.04
0.115 2.04
2.92
1.39 .
0.055 1.14
0.270 5.85
6.85

nn

SEMICONOUCTOR

~ PROOUCTS

3/83

2-100

_UNITRODE

UES1501

UES1502 UES1503

UES1504

ELECTRICAL SPECIFICATIONS
Maximum

Maximum
Reverse Current

Forward Voltage
Type

@PIV

PIV

=25"C

TJ

UESl50l
UESl502
UESl503
UESl504

50V
lOOV
150V
200V

TJ

= lOO"C

.975V @ 16A

.B95V@ l6A

l.lOV @ 32A

l.OV @ 32A

TJ

=25"C

TJ

10ilA

=lOO"C

'"'"::J
'-'
""'u:

12

20

i'5

g

...z

10

I

10

=

V

IlL

II

/UI

II

+lOQOC
+25°C

I--

-50·C

"'"

"'"
0.5

.3

.4

.5

Typical Reverse Current vs Voltage
5000
2000
1000

~

...z
"'::J'"
'"u

500

l.~

\'2.,,·c..........

/f

5,000

}

/

~
ir

10

-

.!:

_I-'"'"

0.5
0.2
0.1

i"--- I"'"

/"

'2.t7

I--

40

60

80

1.0 1.1 1.2

Current vs Duration

for Non-Repetitive
Pulse

b
...........

500

1"---1"

100
50

I'
20

.9

Square Pulse

g 1,000

§
'"
'"'-'::J

'"

.8

1'f".-

"""';"1-'""

w

ill1:;

.7

VOLTAGE (V)

Forward Pulse Current vs Duration
10,000

11'

t---;;6.c

/'

200
100
50

-

1/

.6

v, -

TEMPERATURE ("C)

I

I

UI

4

1

I 1

IhrIII I

I

0

~~ /

~~

+150·C
+125·C

"'::J'"
'"'-'

''"&l"

"'to
""'"
"'~

2.0V

vv

16

...

35n5

ID

Typical Forward Current vs
Forward Voltage
50

14

Typical
Forward
Recovery
Voltage
@lA
tr::: 8n5

BOOIlA

Output Current vs Temperature

g

Maximum
Reverse
Recovery
Time*

100

10

120

.1ps

.5

Ips

lOps

50
100".

Ims

lOms

% OF PIV

PULSE DURATION

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-101

PRINTED IN

U.S.~.

UES1501

Multiple Surge Current VI Duration
100

80

"

\

~

'\

z

~

60

OJ

"::>'"

.

UI

UES1502

UES1503

UES1504

Thermal Impedance vs Pulse. Width

2.5

~

u

~

....
OJ

u

z«

"",

8

""~

~

V

0.5

~

'"ffi

0.25

:I:

>I

20

J

VV

i" f-'"

I- 1-1-

V

«

i'r--t-

40

0

1.0

1/

0.1

1/

II

1 2

10 20

50

100 200

.05
.01.02.05.1 .2

500 1000

.5 1 2

5 10 20 50 100200· 1000

'p - PULSE WIDTH (ms)

CYCLES AT 60 Hz SINE WAVE

Reverse-Recovery Circuit
100

500

+
25Vdc
:::=:: (APPROX.)
lCl

NOTE 3

OSCILLOSCOPE
NOTE 1

NOTES:
1. Oscilloscope: Rise time S 3n5; input impedance = 500.
2. Pulse Generator: Rise time S 8ns; source impedance 100.
3. Current viewing resistor. non-inductive, coaxial recommended.

UNITRODE • SEMICONDUCTOR PRODUCTS

580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617)" 924·1235

2-102

PRINTED IN U.S.A.

RECTIFIERS

UES240 1-UES2404

High Efficiency, 16A Center-Tap

FEATURES

DESCRIPTION

• Very Low Forward Voltage
• Very Fast Recovery Times
• Economical, Convenient TO-220AB
Package
• Low Thermal Resistance
• Mechanically Rugged
• PIV up to 200V

The UES2401 Series in the' economical,
convenient TO-220AB package, is
specifically designed for operation in
power switching circuits to frequencies in
excess of 100kHz. The series combines
two high efficiency devices into one
package, simplifying installation, reducing
heatsink requirements and the need to
purchase matched components.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES2401 .................................................. 50V
Peak Inverse Voltage, UES2402 ................................................. lOOV
Peak Inverse Voltage, UES2403 _. _. __ ............................ _. .. . . . . .. . . . .. 150V
Peak Inverse Voltage, UES2404 _.... ; ........ _..... _... _...... __ ................ 200V
Maximum Average D.C. Output Current
@ Te = 125°C (Note 1) .................... 16A
@ TA =25°C ............................... 3A
@ TA =25°C (Note 2) ..................... IDA
Non-Repetitive Sinusoidal Surge Current, 8.3ms ... _.................... _.. _. __ .. _. 80A
Thermal Resistance, Junction to Case, 8J-e . _.............. _.......... ...... 1.75°C/W
Thermal Resistance, Junction to Ambient, 8J-A ............................... _ 60°C/W
Operating and Storage Temperature Range ............... __ .......... -55°C to +150°C
Note 1. Above 8A use the tab for electrical connection.
Note 2. Using Wakefield Type 295 heatsink with convection cooling. For more definitive
data refer to the Output Current vs. Temperature Curves on this datasheet.

MECHANICAL SPECIFICATIONS
UES240 1-2404

SEATING

TO-220AB

PLANE

INCHES
MIN
MAl

•

~
Pin 1

1
Pin 2
&

Tab

A.

0.560

B

0.380

C

0.140
0.020

0

14
Pin 3

0.139
F
G . 0.090
H

-

J

0.015

K

S

0.500
0.045
0.190
0.100
0.080
0.045

T

0.230

l
N

Q
R

MIlliMETERS
~MIN
MAX

0.625 14.23 15.87
9.66 10.66
3.56
4.82
0.045
0.51
1.14
0.147
3.531 3.733
0.110
2.29
2.79
0.250
6.35
Q.025 0.38
0.64
0.562 12.70 14.27
0.070 1.14
1.77
0.210 4.83
5,33
0.120
2.54
3.04
0.115
2.04
2.92
0.055 1.14
1.39
0.270 5.85
6.85

0.420
0.190

n nPRODUCTS
SEMICONOUCTOR
L-==:J
11182

2-103

_UNITRDDE

..

UES2401 UES2402 UES2403 UES2404
ELECTRICAL SPECIFICATIONS

Maximum
Forward Voltage
@

Type

PIV

UES2401
UES2402
UES2403
UES2404

50V
lOOV
150V
200V

Maximum
Reverse Current
@PIV

TJ = 25·C

TJ = lOO·C

TJ = 25·C

TJ = lOO·C

O.9V@ 4A
0.975@BA
tp = 300ps

0.BV@4A
0.B95@ BA

5pA

150pA
150pA
150pA
500pA

Maximum
Reverse
Recovery
Time"

Typical
Forward
Recovery
Voltage
@lA
t, = Bns

35ns

l.4V

"Measured in circuit IF = O.5A, I. = l.OA, I. Ee = O.25A

Output Current
vs Temperature

Peak Output Current vs
Case Temperature

18
16

g

...z
'"a:a:

'"uI

14
12
10

-~

110
50

25

75

100

120

130

140

150

T, - CASE TEMPERATURE C'C)

TEMPERATURE ('C)

Typical Forward Current
vs Forward Voltage

Typical Reverse Current
vs Voltage
.01

100

1.6~ :;;;,:V

20

~I/

10

g

...z
'"a:a:

'"I
u

-~

.5
.2
.1
.05
.02

.01

~ II

TJ

r/

.1

1
I-

-,~ ~<
1/

,,"

"f.
/1

II

+=-r.T

r-

0:
0:

V

"

~

CJ

-1/ /-. '

II

'"

,CJ

If?

l-

Z

~
-r~
~I

- I - y..

= -so·e

r

.2

A

2

A

.02

50

10
_" 20

fi?P

-

l'lr~c

I

1/

I' l~lOr~

100

1-'

200

I

11il

1000

~
120

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.11.21.3

n

r-~
~

i i+112

T

100
80
60
40
20
VOLTAGE IN % OF PIV

V,-VOLTAGE(V)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-104

PRINTED IN U.S.A.

UES2401 UES2402 UES2403 UES2404

IEII
Forward Pulse Current vs Duration
10,000
5,000
1,000

5

r---- t"---

1

r---.....

500

---

w

w

100

50

'"::>-'

a.

"z
>=
'"
w
"::>
'"u.0

I"--

r--

I"

80

0:

z:

'"

I

1

Peak Half Sine cu~re~t VS • . 1
~ Duration for Non-Repetitive Pulse

j

I-

~
u

Multiple Surge Current vs Duration
100

~

60

0:

'"

40

~

'f'--

r-

""---I-

20

;i2

10
50
lOps

I
100,115

lms

10

2

lOms

20

50

100 200

500 1000

CYCLES AT 60 Hz SINE WAVE

PULSE DURATION

Thermal Impedance
vs Pulse Width

L..;

......
j.-'j.-'

Reverse-Recovery Circuit
500:

100

J...t-I-

+

===

j..-V

25Vdc
(APPROX.)

10

V

NOTE 3

OSCILLOSCOPE
NOTE 1

LL V
N~

.02
.01.02 .05.1 .2

tp

.5 1 2
-

5 10 20 50100200

NOTES:
1. Oscilloscope: Rise lime::; 3ns; input impedance::: 500.
2. Pulse Generator: Rise time :5 Bns; source impedance 100 .
3. Current viewing resistor, non· inductive, coaxial recommended.

1000

PULSE WI DTH (ms)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

2-105

PRINTED IN U.S.A.

RECTIFIERS

UES2601
UES2602
UES2603
UES2601HR2
UES2602HR2
UES2603HR2

High Efficiency, 30A Center-Tap

FEATURES
• Very low Forward Voltage
• Very Fast Switching Speed
• Convenient Package
• High Surge
• low Thermal Resistance
• Mechanically Rugged
• Both Polarities Available

DESCRIPTION
This series combines two high efficiency
devices into one package, simplifying
installation, reducing heat sink requirements and the need to purchase
matched components.

ABSOLUTE MAXIMUM RATINGS
.50V
Peak Inverse Voltage, UES260l, UES2601HR2
Peak Inverse Voltage, UES2602, UES2602HR2
.lOOV
Peak Inverse Voltage, UES2603, UES2603HR2
............ .
. ... l50V
. .. 30A
Maximum Average D.C. Output Current at Tc = lOO°C ...... .
Non·Repetitive Sinusoidal Surge Current 8.3 ms ..................... .
. .400A
Thermal Resistance, Junction to case
.........
. . lOCIW
Operating and Storage Temperature Range
.. - 55°C to + l75°C

POWER CYCLING
These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75°C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simUlate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers disSipated in the switching transistors are substantially
less than when using other rectifiers.

MECHANICAL ~PECIFICATIONS

•

POSITIVE OUTPUT

~I

I

I'-

• •

14

C 0

•

UES2601
UES2602
UES2603
UES2601HR2 UES2602HR2 UES2603HR2

FwrM

CASE

~iJE

I ~I

NEGATiVE OUTPUT

ins.

mm.

.B75 MAX.
.135 MAX.
.250 .450
.312 MIN.
.038-.043 DIA.
.188 MAX. RAD.
1.177-1.197
.655-.675
.205 .225
.420 .440
.525 MAX. RAD.
.151-.161 DIA.

22.23 MAX .
3.43 MAX.
6.35 11.43
7.92 MIN .
0.97 1.09 DIA .
4.78 MAX. RAD .
29.90 30.40
16.64 17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAD.
3.84 4.09 DIA .

CASE

'"00"

I~J'
I 7 i'

G

ANODE 2

.-

J-

~

;0---<

K

A
B

C
D
E
F

G
H

L

J

K
L
M

TO·204AA (TO·3)

Noto:
Standard polarity is positive output.
For reverse polarity (negative output) add suffix "R", ie. UES2601R.

nn

L=.J
2-106

SEMICONDUCTOR
PRODUCTS

_UNITRODE

UES2601
UE52601HR2

UES2602
UES2602HR2

UES2603
UE52603HR2

ELECTRICAL SPECIFICATIONS
Type

PIV

UES2601/2601HR2
UE52602/2602HR2
UES2603/2603HR2

50V
lOOV
l50V

Maximum
Forward Voltage

Maximum
Reverse Current

@

@

Maximum

Reverse
Recovery

Tc = 25°C

Te = 12S'C

Tr.=2S'C

Te= 12S'C

Time·

.930V
@
15A
t, = 3oo}l5

.825V
@
l5A
t,=3oo1<5

20}lA

4mA

35nS

* Measured in circuit IF = O.SA, IR = lA, 'lEe = O.2SA

Output Current vs.
Case Temperature

Peak Output Current vs.
Case Temperature

,----,-,.,--,--.-...,.-.,---""TT-----,

50
30 t--

~~

5:

....z
UJ
0:
0:

:>

20

(J

....

:>
Q.

....

:>

0

10

g

40 ~--~~----~~~~--~_+~--_1

....

~

~

G 30~----+-----~~--~~r-~-1---i
....
i[
....
::J

~ 20 ~----/-

~

I
.2

~
1

10 ~----+_----1------r----_+~~_1

175
125
150
CASE TEMPERATURE ('C)

100
Tc -

100

120

140

160

180

T, - CASE TEMPERATURE ('C)

Forward CUrrent
vs. Forward Voltage
50

5:

....z

UJ
0:
0:

20

/

10

c

0:

~

/

...'"0
-<

.5

.2

/

'I

,/

,,

t1

/

lZ

V, -

.01

§.

.02

!;:
UJ

.05

~

/

a
~
0:
UJ

~

- TYPICAL V,

---- = MAXIMUM v~

J ~+2S'C

.1

.2
.5
1

/--

2

20
.6
.8
1.0
FORWARD VOLTAGE (V)

A-+
T

50

1.2

-r F=i-I-!
V

I 5
-'" 10

'j
.4

:<

./

J

.005

/-T J = +7S'C
I-TJ = +12S'C

~

/

(J

\- V/ "' "'

1/

/

:>

/

.001
.002

~

TJ = +IS0'C
3D

Typical Reverse Current
VS. Reverse Voltage

F::: -TJ =

II
II

+100'C

r-TJ = +12S'C'

--- ,..-V

1

I-- V

+IS0'C

I

130 120 110 100 90 80 70 60 50 40 30 20 10 0
V, - REVERSE VOLTAGE (% OF PIV)

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-107

PRINTED IN U.S.A:

..

UES2601
UES2601HR2

Maximum Forward Surge
VS. Number of Cycles
400

~
z

...

300

UJ

c:
c:
~ 200

100

1.0

w

.5

E

""

u

w
Q.
::;

'"

/

.2

V

/

~

.02

'-....

10

..--- -

V

fV'L
~ICYClE
N -

,..-/

.1

~

UES2603
UES2603HR2

Thermal Impedance
vs. Pulse Width

z
«

o

~

I

J

~

UES2602
UES2602HR2

20

50

100

.01
,01.02 .05.1 .2 .5 1 2
5 10 20 50 100 200
tp - PULSE WIDTH (mSI

1000

200

CYCLES OF 60 Hz SINEWAVE

Reverse-Recovery Circuit
Ion

500

+
_

-=-

25Vdc
(APPROX.I

In

NOTE 3

OSCILLOSCOPE
NOTE!

NOTES:

1. Oscilloscope: Rise time::;;;; 3ns; input impedance = SOO.
2. Pulse Generator: Rise time:::;;;; 8ns; source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices specified UES2601 HR2. 2HR2. 3HR2.
SCREEN

MIL-STD-7S0
METHOD

CONDITIONS

= 150·C

1. High Temperature

1032

24 Hours @ TA

2. Thermal Shock (Temperature Cycling)

1051

F, 20 Cycles, -55 to +150·C. No dwell required
@ 25OC, t ., 10 min. at extremes.

3.

Hermetic Seal
a. Fine
b. Gross

1071

4. Thermal Impedance
5.

Interim Electrical Parameters

6.

High Temperature Reverse Bias (HTRB)

7.

Final Electrical Parameters

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924-1235

H, Helium
C, Liquid
Sage Test

GO/NOGO
1038
GO/NOGO

2-108

VFand IR @25·C

A, 48 Hours, Te

= 125·C, VR = 80% of rating

VF and IR @ 25·C

PRINTED IN U.S.A.

UES2604
UES2605
UES2606
UES2604HR2
UES2605HR2
UES2606HR2

RECTIFIERS
High Efficiency, 30A Center-Tap

FEATURES
• Very Low Forward Voltage (1.15V)
• Very Fast Recovery Times (50nSec)
It Low Profile Package
• High Surge Capability
• Low Thermal Resistance
• Mechanically Rugged
• Both Polarities Available

DESCRIPTION
The UES2604 series is· specifically
designed for operation in power switching
circuits operating at frequencies of at
least 20 KHz.
This series combines two high efficiency
devices into one package, simplifying
installation, reducing heat sink requirements and the need to purchase
matched components.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES2604, UES2604HR2 .............................. 200V
Peak Inverse Voltage, UES2605, UES2605HR2 .............................. 300V
Peak Inverse Voltage, UES2606, UES2606HR2 .............................. 400V
Maximum Average D.C. Output Current @ Tc = lOO·C ......................... 30A
Surge Current, 8.3mS .................................................. 300A
Thermal Resistance, Junction to Case .................................... 1·C/w
Operating and Storage Temperature Range ...................... - 55·C to + 150·C

POWER CYCLING
These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full rated forward current is supplied to force a case temperature increase at least 75°C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.

SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applicat~ns, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.

MECHANICAL SPECIFICATIONS

•

POSITIVE OUTPUT

~I

I

14

• •

14

CASE

UES2604
UES2605
UES2606
UES2604HR2 UES2605HR2 UES2606HR2

CASE

~f1bE
e

I ~I •

NEGATIVE OUTPUT

D.

F~M
G
I

I

~.J:'

A

B
ANODE 1
ANODE 2

o-

H
I

i"

e

J-~

-K

L

C
0
E
F
G
H
J
K
L
M

ins.

mm.

.875 MAX.
.135 MAX .
.250-.450
.312 MIN.
.038-.043 DIA.
.188 MAX. RAO.
1.117-1.197
.655-.675

22.23 MAX .
3.43 MAX.
6.35-11.43
7.92 MIN.
0.97-1.09 DIA.
4.78 MAX. RAD.
29.90 30.40
16.64-17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAO .
3.84-4.09 DIA .

.205 .225
.420 .440
.525 MAX. RAD.
.151-.161 DIA.

TO·204AA (TO·3)

Nole:
Standard polarity is positive output.
For reverse polarity (negative output) add suffix uR", ie. UES2604R.

n nPRODUCTS
SEMICONDUCTOR
l.=.J
4/79 (Rev. 1)

2-109

_UNITRDDE

UES2604
UES2605
UES2606
UES2604HR2 UES2605HR2 UES2606HR2
ELECTRICAL SPECIFICATIONS, PER LEG
Maximum
PIV

UES2604/2604HR2
UES2605/2605HR2
UES2606/2606HR2

200V
300V
400V

* Measured in circuit

IF::

.5A,

IR

Te =2S'C

Te = 12S'C

Te =2S'C

T e =12S'C

Time-

l.2SV
@ lSA
tp =3001'5

1.l5V
@lSA
tp
3001'5

SOI'A

lOrnA

50nS

=

=lA, i REC = .25A

Peak Output Current vs.
Case Temperature

Output Current vs.
Case Temperature

5:

30

.............

"""

....z

W
Q:
Q:

=>

Maximum
Reverse
Recovery

Maximum
Reverse Current

Forward Voltage

Type

20

u

....

=>
0..

....

=> 10
0
I
_0

100

'" ""

110

Te -

120

'\.

130

1\

140

ISO

CASE TEMPERATURE ('C)

T, - GASE TEMPERATURE C'G)

Typical Reverse Current
vs. Reverse Voltage

Forward Current
vs.· Forward Voltage
lOOK

100
SO

~ :;:;: ~ /'
/r/ /

5:

20
.... 10

z

W
Q:
Q:

G2
o

Q:

~ .5
Q:

-r-.tJ

~ .2 -

_~

.1

.05
.02

.01

$

-",! '"

/ V
/ / / /
/ /
/
/
.tJ .tJ ~'if

~

'f. 'f.
II II

~ 10K
~

tfJj_

i'

....

z

"'
Q:
Q:

=>

"'en
"'~
Q:

!t/
/

-

If

1/

II

rV y Y
II / II II

25'G
10

--

r-

JlL'

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.11.2 1.3 1.41.5

o

V, - FORWARD VOLTAGE (V)

10

m

~

V, -

2-110

V

100

I
-~

125'C

"/
I

"100'G

0:

"'j "'j

",..-

""l""~

If

U

II '"-. 1/

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

IK

-

w

~

w m

./

L

.......
M

~

lOOllOlml~lWlSO

REVERSE VOLTAGE (% OF PIV)

PRINTED IN U.S.A.

UES2604
UES2605
UES2606
UES2604HR2 UES2605HR2 UES2606HR2
Maximum Forward Surge
vs. Number of Cycles
300

I""

g

...
"'0:0:
z

200

:J

u

I

-~

100

Thermal Impedance
vs. Pulse Width

"" " ""

I-!\J\..

i T
1C

UJ
U

v-- 1-1-

.5

/'

Z

'"

a

UJ

~

LE

"::;

f'-.

-

..J

"

~

//
.2

.05

UJ

I

l-

I

/

.1

V

/

.02

."

o

Q5' .01
10

1
N-

20

50

100

'"

200

.01.02 .05.1 .2

CYCLES OF 60 Hz SINEWAVE

tp -

.5 1 2

5 10 20 50100200

1000

PULSE WIDTH (mS)

Reverse-Recovery Circuit

Ion

son

+
_
-=-

25Vdc
(APPROX.)

10

NOTE 3

OSCILLOSCOPE
NOTE 1

=
NOTES:
1. Oscilloscope: Rise time ~ 3nsj input impedance = 50n.
2. Pulse Generator: Rise time ~ 8nsi source impedance 100.
3. Current viewing resistor, non·inductive, coaxial recommended.

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices specified UES2604HR2. SHR2. 6HR2.
SCREEN

MIL-STD-7S0
METHOD

CONDITIONS

1.

High Temperature

1032

24 Hours @ TA = 150·C

2.

Temperature Cycle

1051

F. 20 Cycles. -55 to +150·C. No dwell required
@ 25oc, t ;. 10 min. @ extremes

3.

Hermetic Seal
a. Fine Leak
b. Gross Lea k

1071

4.

Thermal Impedance

5.

Interim Electrical Parameters

6.

High Temperature Reverse Blocking

7.

Final Electrical Parameters

UNITRODE· SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

H. Helium
C, Liquid
Sage Test

GO/NOGO
Similar to
Method 1040

GO/NOGO

2-111

VF and IR @ 25·C

'Iz Sine Reverse, t = 48 Hours. Tc = 125·C. VRW M
= rating. F = 50-60 Hz, 10 = OA
VF + I R @25°C
PDA = 10% (Final Electricals)

PRINTED IN U.S.A.

RECTIFIERS

UES3005C
UES3010C
UES3015C

High Efficiency, 30A Centertap, 50-150V
FEATURES
• Economical Convenient
TO-3P Package
• Insulated Mounting Hole
• Can Be Clip Mounted
• Mechanically Rugged
• Low Thermal Resistance
• Ultra-Fast Recovery Time
• Extremely Low VF

DESCRIPTION
The UES3005C Series, in the economical, convenient TO-3P package, is specifically
designed for operation in power switching circuits to frequencies in excess of 100kHz.
The very low forward voltage and very fast recovery time make them particularly suited
for switching type power supplies.

ABSOLUTE MAXIMUM RATINGS, either leg unless noted
UES3005C
UES3010C
UES3015C
Peak Inverse Voltage .................................... VR, VRWM, VRRM ........... 50V ............. lOOV ............ 150V ..
Maximum Average D.C. Output Current
@ Tc = 125°C, full wave operation (see curves) ......•....... IFIAV) ................................... 30A .................... .
Non-Repetitive Sinusoidal Surge Current, 8.3mS ................ IFSM . .. .. .. .. .. .. .. .. .. .. .... .. .... ... 300A .................. ..
Thermal Resistance Junction to Case ........................... R/IJ-c .................. ,'............. '. 1.5°C/W .................. .
Thermal Resistance Junction to Case
both legs together, full wave ................................ RiIJ-c ................................. 0.9°C/W ................. ..
Thermal Resistance Junction to Ambient
either leg, or both legs together ............................. R/IJ-A ................................. 40°C/W ................. ..
Operating and Storage Temperature Range ........... "....... Top, TSTG .......................... -55°C to + 150°C .............. .

ELECTRICAL SPECIFICATIONS

Type

PIV

UES3005C
UES3010C
UES3015C

50V
100V
150V

• Measured in circuit IF

Maximum
Reverse Current (IR)
@PIV

Maximum
Forward Voltage (VF)
TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = 125°C

1.0@ 15A
1.1 @ 30A

0.9@15A
1.0@30A

15IJA

5mA

Maximum
Reverse
Recovery
Time"

Typical
Forward
Recovery
Voltage
@ lA
TR = 14ns

35ns

2.0V

=O.50A, IRM =l.OA, IREe = O.25A.

MECHANICAL SPECIFICATIONS
TO-3P

I~I

~~!

FiF~97NOM.

,.....

~
f==

t-

•

PI~ Ilpl~'3'
PIN 2

&

3

TAB

DIM.
A
B
C
D
E
F
G

H

J
K

~~~

-M

-N-

:J

L
M
N

INCHES
MIN. MAX.
.620
.640
.825
.845
.060
.080
.780
.800
.087
.102
.019
.029
.150
.170
.212
.222
.140
.144
.042
.052
.074
.084
.113
.123
.430 Nom.

nn

SEMICONDUCTOR

~ PRODUCTS

10/86

2-112

_UNITRODE

UES3005C

Average Output Current
vs Case Temperature
40

t--

I--

Full
Leg
See
Leg

UES3010C

UES3015C

Peak Output Current vs Case Temperature
(Either leg)

Wave Operation with Each
at 30% Minimum Duty Factor.
Peak Current Curve for EJther
Operating Individually.

r\

\

\

1\

\

25

100
125
50
75
Te, CASE TEMPERATURE _ (OC)

100

150

110

Typical Forward Current vs Forward Voltage

/
+150°C10

~

= 1=

=>

140

150

100

S
a:

130

Typical Reverse Current vs Voltage

100

r-

120

Te. CASE TEMPERATURE - (OC)

~~

:<
g

/ /

10

r-

15
lE

=+125°C

<.)

II

li1

:/,

'~"

~

i"'-

I

+150 c C

+125°C
+lOQoC

=>
<.)

~-55°C_

+25°C::::

~

...

I

'"ffi"'
~

E

.,;

0.1

.5
0.01

1/

I

/ :I

/

0.1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 l.l 1.2
VF,

10

20 30 40

VOLTAGE - (V)

50 60 70 80 90 100 110 120
% OFVR - (V)

Reverse-Recovery Circuit
Ion

500

-

+25°C

Thermal Impedance vs Pulse Width
(Each leg)
2.0

€

e

+
_
-=-

2SVdc
(APPROX.)

10

NOTE 3

-I-

1.0

...... ~

0.5

'/

"'z

1-" ......

<.)

'"~

OSCILLOSCOPE
NOTE 1

0

0.2

~

0.1

/~

;;'
::E

-=
NOTES:

a:

I

~

=

1. Oscilloscope: Rise time ~ 3ns; input impedance
SOO.
2. Pulse Generator: Rise time ~ 8nsi source impedance 100.
3, Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE - SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET - WATERTOWN, MA 02172
TEL. (617) 926.0404 - FAX (617) 924·1235

.05

"'r-

/

1I

.02
.01
.01.02 .05.1 .2

tp

2-113

.5 I
-

2

5 10 20 50100200 1000

PULSE WIDTH (mS)

PRINTED IN U.S.A.

RECTIFIERS

UES3005S
UES3010S
UES3015S

High Efficiency, 30A, 50-150V
FEATURES

DESCRIPTION

• Economical Convenient
TO-3P Package
• Insulated Mounting Hole
• Can Be Clip Mounted
• Mechanically Rugged
• Low Thermal Resistance
• Ultra-Fast Recovery Time

The UES3005S Series, in the economical, convenient TO-3P package, is specifically
designed for operation in power switching circuits to frequencies in excess of 100kHz.
The very low forward voltage and very fast recovery time make them particularly suited
for switching type power supplies.

ABSOLUTE MAXIMUM RATINGS

UES300SS

UES3010S

UES301SS

Peak Inverse Voltage ..................................... VR, VRWM, VRRM ................... 50V ......... 100V ......... 150V ..
Maximum Average D.C. Output Current @ Tc = 115°C ..•....... IFIAV) ...................................... 30A ................ .
Non·Repetitive Sinusoidal Surge Current, 8.3mS ................ IFsM ..................................... 400A ................ .
Thermal Resistance Junction to Case ........................... RBJ-c ................................... . 1.2°C/W .............. .
Thermal Resistance Junction to Ambient ....................... RBJ-A .......•..........•........... ; ..... 40°C/W . .............. .
Operating and Storage Temperature Range ................... Top, TSTG .............................. -55°C to + 150°C .......... .

ElECTRICAL SPECIFICATIONS

PIV

Type

50V .
100V
150V

UES3005S
UES3010S
UES3015S

Maximum
Reverse Current (IR)
@PIV

Maximum
Forward Voltage (VF)
TJ = 25°C

TJ = 125°C

1.1 @ 30A
1.3@60A

_ l.O@30A
1.25@60A

TJ = 25°C
15!1A

Maximum
Reverse
Recovery
Time·

Typical
Forward
Recovery
Voltage
@ 1A
TR = 14ns

35ns

2.0V

TJ = 125°C·
5mA

* Measured in circuit IF = O.50A. lAM = l.OA, IAEe = O.25A.

MECHANICAL SPECIFICATIONS
TO-3P

1:1

fLH
~'

LJ'l

I

FiF~97NOM.

,.....

~

1=

. PIN 1
CATHOOE 1
PIN2
ANODE

B
C
D
E
F

2

i--N-

DIM.
A

G
H

I

:1

J
K
L
N

INCHES
MIN. MAX.
.620
.640
.825
.845
.080
.060
.780
.800
.087
.102
.019
.029
.150
.170
.222
.212
.140
.144
.042
.052
.OB4
.074
.430 Nom.

1. Mounting surface common to cathode

nL.:::LJn
10/86

2-114

SEMICONDUCTOR
PRODUCTS

_uNiTRODE

UES3005S

Average Output Current
vs Case Temperature

UES3010S

UES3015S

Peak Output Current vs Case Temperature

40

,

1\

1\

\

j

1\

\
25

50

75

100

125

100

150

110

Te. CASE TEMPERATURE - ('G)

Typical Forward Current vs Forward Voltage

150

10

V
~150'C -

10

~
=>

1= f=

tv ~

:<

V II

I

+125°C

0-

II

'"s:
0:

it

/",

=>

u

-5S'C_

5'"c::;

I

+2S'C::::1==

.!E
I

~

0.1

0.01

I

+25°C

I II

I-

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

10

20 30 40

VF. VOLTAGE - (V)

Thermal Impedance vs Pulse Width

Ion

2.0

~

t
+
25Vdc

(APPROX.)
10
NOTE]

OSCILLOSCOPE

NOTE 1

0.5

0.2

~

O. 1

V

.. V
.05

:I:

0-

~

=

"""I--"

V .....

~

/

V

.02
.0 1

1. Oscilloscope: Rise time::;;; 3nsj input impedance
50C.
2. Pulse Generator: Rise time::;;;: 8nsi source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERTOWN. MA 02172
TEL. (617) 926·0404 ' FAX (617) 924·1235

10-11.0

u
'"
~

ffi'"

=
NOTES:

50 60 70 80 90 100 110 120
% OF VR - (V)

Reverse-Recovery Circuit

soo

l+lOlo'c

0:

.,,;

)1/

!

~

II I-

1/

[i1

0.1

+150°C

-5

+125°C

u

...=...

140

100

g

_

130

Typical Reverse Current vs Voltage

100

0-

120

Tc. CASE TEMPERATURE - ('C)

.01.02 .05.1 .2

.5'1 2

5 10 20 50100200 1000

Ip - PULSE WIOTH (mS)

2-115

PRINTED IN U.S.A.

UES4505C
UES4510C
UES4515C

RECTIFIERS
High Efficiency, 45A Centertap, 50 - 150V
FEATURES
• Low Forward Voltage

DESCRIPTION
The UES4505C Series, in the economical, convenient TO-3P package, is specifical!y
designed for operation in power switching circuits to frequencies in excess of 100kHz.
The very low forward voltage and very fast recovery time make them particularly suited
for switching type power supplies.

• Fast Recovery Times
• Economical Convenient
TO-3P Package
• Low Thermal Resistance
• Mechanically Rugged
• PIV up to 150V

ABSOLUTE MAXIMUM RATINGS, either leg unless noted
UES4505C
UES4510C
UES4515C
Peak Inverse Voltage ................................. _.. VR, VRWM, VRRM ......... _. 50V ............. 100V ... _... _..... 150V ..
Maximum Average D.C. Output Current
@ Tc = 125°C, full wave operation (see curves) . _.. _.. _.. _" -'FIAV) ... _............................... 45A .................... .
Non-Repetitive Sinusoidal Surge Current, 8.3mS ................ IFSM .................................. 450A ................... .
Thermal Resistance Junction to Case .......................... ReJ-c ............................... 0.8°C/W .................. .
Thermal Resistance Junction to Case
both legs together, full wave ............................... R6J-c ..........•.................... 0.6°C/W .................. .
Thermal Resistance Junction to Ambient
either leg, or both legs together ............................ ReJ-A ................................ 40°C/W .................. .
Operating and Storage Temperature Range .................. Top, TSTG ........................... -55°C to +150°C .............. .
ELECTRICAL SPECIFICATIONS

Type

PIV

UES4505C
UES4510C
UES4515C

50V
100V
150V

·Maximum
Forward Voltage (VF)

TJ

I

= 25°C

1.1 @45A
1.0@22.5A

TJ

Maximum
Reverse Current (IR)
@PIV

= 125°C

1.0@45A
.88@22.5A

TJ

= 25°C

TJ

20/lA

Maximum
Reverse
Recovery
Time'

= 125°C

Typical
Forward
Recovery
Voltage
@ 1A
tr = 14ns

50ns

lOmA

2.0V

• Measured in circuit IF = O.50A, 'IRM " l.OA, IREC = O.25A.

MECHANICAL SPECIFICATIONS

I~I

rc~ ~
B

y1

FiF2
---:-::
.- -

TO-3P
7NOM

•

.

PI~ 1Ipl~'3'
PIN2
&
TAB

3

OIM.
A
B

C
D
E

F
G
H

J

~~~.

-M
I---N-

:J

K
L
M
N

INCHES
MIN.
MAX.
.620
.640
.845
.825
.060
.080
.780
.800
.087
.102
.Oi9
.029
.150
.170
.212
.222
.140
.144
.042
.052
.074
.084
.113
.123
.430 Nom.

nn

SEMICONOUCTOR

~ PROOUCTS

10/86

2-116

_UNITRDDE

UES4505C UES4510C UES4515C

Average Output Current
vs Case Temperature

Peak Output Current vs Case Temperature
(Either Leg)

60
r-

g
....

r:i

'--

Full Wave Operation with Each
Leg at 30% Minimum Duty Factor.
See Peak Current Curve for Either
Leg Operating Individually.

45

\

a:
a:
::J
u

\

....

~::J

30

0

w

\

15'"

'"~

1

15

,;;
0
25

0

50

75

100

125

150

llO

100

Tc. GASE TEMPERATURE _ ('G)

120

130

140

150

Tc. GASE TEMPERATURE - ('G)

Forward Current
vs Forward Voltage

Typical Reverse Current vs Voltage

200

100

100

g

....
r:ia:
a:
::J
u
0
a:

""a:

e"

l

10

;;;:

50

+150°C

S
I
....

+125°C

~

20

U

w

10

0.1

~
~

.!!o

-"

+ 100°C

..

::J

0.01

+25°C

1
0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

20 30 40

V, - FORWARD VOLT AGE (V)

Thermal Impedance vs Pulse Width
(Each Leg)

Reverse-Recovery Circuit

§:

Ion

SOD

50 60 70 80 90 100 110 120
% OF VA - (V)

E
}j
z

+

-=_

is

25Vdc

~

(APPROX.)

III

NOTE 3

~
OSCILLOSCOPE
NOTE 1

.05

I

.02

~ .01

N

NOTES:
1. Oscilloscope: Rise time ~ 3ns; input impedance = SOU.
2. Pulse Generator: Rise time ~ 8ns; source impedance 100.
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE· SEMICONDUCTOR PRODUCTS
580 PLEAS.I\NT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

.1

""
~

:t:
l-

=

2-1l7

i-""I--"'"
/'

.2

..J

'"

f-"I--f-

.5

,,/'

i-'X

V

.0\.02 .05.1 .2 .5 1 2 5 10 20 SO 100 200
tp - PULSE WIDTH ImS)

1000

PRINTED IN U.S.A.

..

UES4505S
UES4510S
UES4515S

RECTIFIERS
High Efficiency, 45A, 50-150V
FEATURES

DESCRIPTION

• Economical Convenient
TO-3P Package

The UES4505S Series, in the economical, convenient TO-3P package, is specifically
designed for operation in power switching circuits to frequencies in excess of 100kHz.
The very low forward voltage and very fast recovery time make them particularly suited
for switching type power supplies.

• Insulated Mounting Hole
• Can Be Clip Mounted
• Mechanically Rugged
• Low Thermal Resistance
• Ultra-Fast Recovery Time

ABSOLUTE MAXIMUM RATINGS

UES4505S

UES4510S

UES4515S

Peak Inverse Voltage ..................................... VA, VAWM, VAAM ............ 50V ............. 100V ............ 150V ..
_Maximum Average D.C. Output Current @ Tc = 110°C ....... , . , • IFIAV) ................................... 45A ..... : .............. .
Non-Repetitive Sinusoidal Surge Current, 8.3mS ................ IFSM .................................... 450A ................... .
Thermal Resistance Junction to Case ........................... RBJ-c ................................ 0.8°C/W ................. .
Thermal Resistance Junction to Ambient ....................... RoJ-A ................................ .40°C/W ................ ..
Operating and Storage Temperature Range ................... Top, TSTG .......................... -55°.C to +150°C ., ....•.......

ELECTRICAL SPECIFICATIONS

Type

PIV

UES4505S
UES4510S
UES4515S

50V
100V
150V

Maximum
F9rward Volatge (VF)

Maximum
Reverse Current (IA)
@PIV

Maximum
Reverse
Recovery
Time'

TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = 125°C

1.1 @45A
L3@90A

LO@45A
1.20@90A

20/JA

10mA

• Measured in circuit IF = 0.50A, IRM = l.OA, IREC

50ns

Typical
Forward
Recovery
Voltage
@ lA
TA=14ns

2.0V

= O.25A.

MECHANICAL SPECIFICATIONS
TO-3P
FiF~97NOM.

c----

rF=

PIN 1
CATHODE 1
PIN 2
ANODE

DIM.
A
B

C
D
E
F

G

J

H
J
K
L
N

INCHES
MIN. MAX.
.620
.640
.825
.845
.060
.080
.780
.800
.087
.102
.019
.029
_150
.170
.212
.222
.140
.144
.042
.052
.074
.084
.430 Nom.

1. Mounting surface common to cathode

n.L:::::!Jn
10/86

2-118

SEMICONDUCTOR
PRODUCTS

_UNITRODE

UES4505S

Average Output Current
vs Case Temperature

UES4510S

UES4515S

Peak Output Current vs Case Temperature

60

g
r-

~=>

45

:\

<.)

r-

15:
r=>

\

30

0

'"iii'"'"
:i'

1\

\

15

1

1\
o

50

25

75

100

125

150

100

120

110

Te, CASE TEMPERATURE _ (OC)

130

140

150

Te, CASE TEMPERATURE - ('e)

Forward Current
vs Forward Voltage

Typical Reverse Current vs Voltage
100

200r---~--'----.---r---r---'---'

100r---t---~---r---r~~~~~~

10

;;:

E

.s

50r---1---_+--~--~~~~f__+--~

,150'e
'l2.5·C

r-

~

20r---1---_+--~~~~~Y_--_+--~

g:

J'e

:J

...

.<.)

'"

1Or---t---+

0.1

'"
iii
~

!E
001
_.. 2

f----il----It+-++---f--+--+--i

.. _1.1-__-'----''-''-__--'-''----'-__--'-__---''----'
0.2
0.4
0.6
0.8
1.0
1.2
1.4

v, -

10

50 60 70 80 90 100 110 120

Thermal Impedance vs Pulse Width

109

~
~

(APPROX.)

NOTE 3

/'

.2

~

·25Vdc

In

-I--

.5

z
<5

+
_

"

0/0 OF VA - (V)

Reverse-Recovery Circuit

son

20 30 40

FORWARD VOLTAGE (V)

.1

oJ

/

~

uJ

I

.02

g

N

NOTES:

.01

.01.02 ,05.1 .2

,5 1 2

5 10 20 50 100 200

1000

t. - PULSE WIDTH (mS)

1. Oscilloscope: Rise time ~3ns; input impedance = 500.
2. Pulse Generator: Rise time ~ 8ns; source impedance 100.
3. Current viewing resistor, non-inductive. coaxial recomm.ended.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

/

J:
l-

=

f-""

,/

_. "
a: .05

OSCILLOSCOPE
NOTE 1

V'V'

2-119

PRINTED IN U.S.A.

..

RECTIFIERS

UHVP202-UHVP210

HIGH RELIABILITY, J.lVf~TM SERIES
2.0 AMPS
FEATURES
• Ultra Fast Recovery Time
• Controlled Avalanche
• High Temperature Operation with
Low Loss
• Minimal Recovery Transients
• Low capacitance
• Low Turn·On Voltage
• Non·Cavity Metallurgically Bonded
Package

DESCRIPTION
This state·of·the·art high efficiency rectifier is ideally suited for applications requiring
high blocking voltage. It has the ability to switch significant current with minimal switching
transients and losses. Leakage current at high junction temperatures has been minimized
achieving exceptionally low reverse losses. An ultra stable process ensures high reliability
and long life. This device is designed for a wide variety of applications including high
frequency switching power supplies.

ABSOWTE MAXIMUM RATINGS

REVERSE
VOLTAGE

AVERAGE
DC OUTPUT
CURRENT
TL =SsoC, L=3/S"

AVERAGE
DC OUTPUT
CURRENT
TA=2SoC

PEAK
FWD. SURGE
CURRENT
t p =S.3ms

UHVP202

200V

2.0A

l.2A

20A

UHVP204

400V

2.0A

1.2A

20A

UHVP206

600V

2.0A

1.2A

20A

UHVP208

800V

1.5A

l.OA

20A

UHVP209 '

900V

1.5A

1.0A

20A

UHVP2l0

lOOOV

1.5A

1.0A

l5A

TYPE
NUMBER

Operating and Storage Temperature Range -SsoC to +lS0°C.
Thermal Resistance, 8JL • See Lead Temperature Derating Curve.

MECHANICAL SPECIFICATIONS
BAND INDICATES

CATHODE END

c:::2

r

.l 55TY P.
3.9mm

II

~OOMIN~50MAl!,..

I "17.8mm

6.35mm-

UHVP202·UHVP210

r:-, t
+ L

BODY A

.085 MAX.
2.16mm

.030±.OOl,
O.77mm ±.03

_,O~~=

Available in surface mount package; consult factory for information.

nn

SEMICONDUCTOR

~ PRODUCTS

2·120

_UNITRDDE

UHVP202-UHVP21O

ELECTRICAL SPECIFICATIONS (AT 2SoC UNLESS NOTED)
REVERSE
BREAKDOWN
VOLTAGE
@SOIJA

TYPE
NUMBER

FORWARD
VOLTAGE

FORWARD
VOLTAGE

REVERSE
LEAKAGE
TA=2SoC

ID

REVERSE
RECOVERY
TIME
O.SA·l.0A·.2SA*

REVERSE
LEAKAGE
TA=12SoC

UHVP202

220V

l.6V@2A

l.4V@l.2A

l.OIJA

100IJA

30ns

UHVP204

440V

1.6V@2A

l.4V@1.2A

l.OIJA

100IJA

30ns

UHVP206

660V

1.6V@2A

l.4V@1.2A

l.OIJA

lOOIJA

30ns

UHVP208

880V

1.8V@1.5A

1.55V@1.0A

l.OIJA

lOOIJA

. 50ns

UHVP209

990V

1.8V@1.5A

1.55V@l.OA

l.OIJA

lOOIJA

50ns

UHVP210

noov

1.95V@1.5A

l.75V@1.0A

2.01JA

150IJA

65ns

". See Figure 20 for characteristic waveform.

Typical Forward Current vs Forward Voltage
20
2

g

1.5 AMP SERIES

10

~

...I

g

fP'

IE

=>

u

\50o~-"

a

125"C

.5

1/ / ....

II /11

I

.2

.2

~~

~

'"'"u:::>
a
'"~
12'"

M ~ /1

"'-. ~

10

...I

~~

~

'"~
'"
12

Typical Forward Current vs Forward Voltage
20

AMP ~ERlks

~_55°C

150"C-

.5

I

'-~5OC

.6

.8

~

IV

'/ 11"

.4

-....

',5OC

2

1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

.4

.6

.8

Typical Reverse Current
vs Applied Reverse Voltage
2AMPSERIES

200,.1\

lOOllA
50,..A

-

lOJ.lA
5,.1\

l!i
ffi>

2,A

~

1,.4

I

500nA

~

12~

200nA

lOOnA
50nA
20nA

IOnA

o

-

--

50D!-,A

lOOI-lA

50,.1\

IE

'"'":::>
u

20,.1\

lO,..A

'"
if'

5,A

~
~

2,A

I

500nA

1,.4

.!!

200nA

IDOnA

_______~,,~
I

50nA

20nA
lOnA

25

50

/)

il

1.0

1"--25OC

1
1.2 lA

1.6 18 2.0 2.2 2.4

75

100

125

- ----- -

-

15!l:S- ~
125<>C

-25

PERCENT OF VA RATING

.,.".,.,
7,.~oC

.,.".,.,

.,..;-r
1

I
50

75

100

125

PERCENT OF VA RATING

Figure 3

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

1.5 AMP SERIES

200I-lA

,.. / '

$

~ 'J [I '- t- -55OC'

Typical Reverse Current
vs Applied Reverse Voltage
IrnA

500l-lA

20/>/A

'-... ~ ~ 'i

Figure 2

Figure 1

...
~
'"'":::>
u

~

VF - FORWARD VOLTAGE - {V)

V, - FORWARD VOLTAGE - (VI

1rnA

I""

Figure 4

2-121

PRINTED IN U.S.A.

UHVP202-UHVP21O
Reverse Recovery Current vs dildt
10

Reverse Recovery Current vs di/dt
10

2 AMP SERIES

...
\~<=,';)y
i-'" I~~

~

i.;"

...

."Yr

VI/'
IJII~

[tl-':i-'"

100

200

300

"

400

=

70

~

15

=

50

ffi

40

w

~
a:
I

30

~ 20

..E
.3

=

=

100
1.5 AMP SERIES

'"S'"w

--

~

t"

f- f-

.....

90
80

'"

70

§

60

;=

il:

60

hl
a:

400

Reverse Recovery Time vs Junction Temperature
(iF
2A, di/dt 200A/~s, VA
SOV)

=

2 AMP SERIES

;=

300

Figure 6

Reverse Recovery Time vs Junction Temperature
(iF 2A, di/dt 200A/~s, V.
50V)

=

200

NOTE: See Figures 9 and 10.

100

:;

~

100

Figure 5

90

:-1-1-'

di/dt-RATE OF FAll FORWARD CURRENT-(A'IAS)

NOTE: See Figures 9 and 10.

80

....r--

\,.~~r--

r&:

dl/dt - RATE OF FALL OF FORWARD CURRENT - (A/j./S)

I
~

""

i-'" \ .\~
V
V i-'" I/~

1--

IJ~

g

" .!

V

\.::~

VI/i-'"
I/'I/ 1' .... 1--'

1.5 AMP SERIES

Ii!
iJl

ffi

~

..

~ ~ f-

50

~f- f-"

40

t.

30

I

I-- ~ ~
tb

~ 20

..E
.3

10

10

-

tb

20 30 40 50 60 70 80 90 100

20 30 40 50 60 70 BO 90 100 110 120 130 140 150

no

120 130 140 150

Tj - JUNCTION TEMPERATURE - IOC)

Tj - JUNCTION TEMPERATURE - IOC)

NOTE: See Figures 9 and 10.

NOTE: See Figures 9 and 10.

Figure 7

FigureS

Rectifier Current During Reverse Recovery

t""RM Measurement Circuit, Simplified
Rview
DEVICE
UNDER

TEST

NOTE: The gate of the MOSFET
is double pulsed. The first pulse
ramps up the inductor current. A
short interpulse period forward
biases the device under test to
the desired 'F. The second pulse
reverse biases the device under
test creating the desired dildt so
that the reverse recovery parameters can be measured. The
pulse pair is repeated at a low
duty lactor and does not result in
device heating.
Figure 9

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

Figure 10

2-122

PRINTED IN U.S.A.

UHVP202-UHVP21O
Typical Peak Forward Recovery Voltage vs diF/dt
(iF lA, di/dt measured from 10% to 90% of iF)

Typical Peak Forward Recovery Voltage vs diF/dt
(iF lA, di/dt measured from 10% to 90% of iF)

=

=

10

20

2AMPSERIES

18

0

'"~~

16

I

0

14

~w

",",

12

"-0

10

L5~

V-

1.5 AMP SERIES

~>

-'"

~~

V

c-w

I,.;

~i3

V

V

Ifrl

,'"
~

>

I10

20

50

100

diF/dt - RATE OF RISE OF FORWARD CURRENT -

200

10

(AI~S)

Average Forward Current vs Ambient Temperature
(50% Duty Cycle, Square Wave)

Average Forward Current vs Ambient Temperature
(50% Duty Cycle, Square Wave)
2.0

Raj-A ",,75°C/W

1.5 AMP SERIES

....I

....I

illco

1.5

:::l
U

U
Cl

0

co
1.0

~

..........

~

w

"'«ffi

"

1.5

co

:::l

I

ROj.A ",,75°CIW

$

$

Ii'

200

Figure 12

'2 AMP SERIES

'"'"
'"~

100

Figure 11

2.0

ill

50

20

diF/dt - RATE OF RISE OF FORWARD CURRENT - (NjAS)

0.5

Ii'
ffi

""-

'"

a
50

75

.............

~

~

~

25

1.0

w

100

"~
I

~

125

25

175

150

~

0.5

50

~

~

100

75

""

125

TA - AMBIENT TEMPERATURE -

TA - AMBIENT TEMPERATURE - (0C)

Figure 14

Figure 13

150

175

(OC)

Average Forward Current vs Lead Temperature
(50% Duty Cycle, Square Wave)

Average Forward Current vs Lead Temperature
(50% Duty Cycle, Square Wave)
3r---~---r---r---'----r---.

1.5 AMP SERIES

L : LEAD LENGTH
FROM BODY

O~

25

__-L____
50

~

75

__-L____L -__

100

125

~

__

150

~

175

50

T, - LEAD TEMPERATURE - (OCi

75

100

125

150

175

T, - LEAD TEMPERATURE - (OCi

Figure 16

Figure 15
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL (617) 926-0404 • FAX (617) 924-1235

L : LEAD LENGTH
FROM BODY

2-123

PRINTED IN U.S.A.

l1li

UHVP202-UHVP21O
Forward Pulse Current vs Pulse Duration

Reverse Pulse Power vs Pulse Duration

10'OOOm_~~
Square PulseCurrenl vs

Duralion for Non·Repetrtrve Pulse
(8.3 ms sine wave equivalent
to3mssquarewave)

10L-~~~W-~-LLll~

lOOns

~

__

~~~~-L~LU~-J-L~~

lCX)j.lS

PULSE DURATION

PULSE DURATION

Figure 17

Figure 18

Transient Thermal Response

1m,

lOms

Characteristic Waveform
(O.S-l.O/O.2SA)

100

I

--I

I~

trr

IREC =.25A

,

V'"

\

\
10".5

1m,

lOms

lOOms

_t

-t

1.1

1,

PULSE DURATION

Figure 19

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

Figure 20

2-124

PRINTED IN U.S.A.

RECTIFIERS

UHVP402-UHVP41O

HIGH RELIABILITY, "Vf~TM SERIES
4.0 AMPS
FEATURES
o Ultra Fast Recovery Time

DESCRIPTION
This state·of·the·art high efficiency rectifier is ideally suited for applications requiring high
blocking voltage. It has the ability to switch significant current with minimal switching tran·
sients and losses. Leakage current at high junction temperatures has been minimized
achieving exceptionally low reverse losses. An ultra stable process ensures high reliability
and long life. This device is designed for a wide variety of applications including high
frequency switching power supplies.

o Controlled Avalanche
o High Temperature Operation with
Low Loss
o Minimal Recovery Transients
o Low Capacitance
• Low Turn·On Voltage
o Non·Cavity Metallurgically Bonded
Package

ABSOLUTE MAXIMUM RATINGS
PEAK
FWD. SURGE
CURRENT
t p =8.3ms

TYPE
NUMBER

REVERSE
VOLTAGE

AVERAGE
DC OUTPUT
CURRENT
TL=55'C, L=3/8"

UHVP402

200V

4.0A

2.0A

75A

UHVP404

400V

4.0A

2.0A

75A

AVERAGE
DC OUTPUT
CURRENT
TA=25'C

UHVP406

600V

4.0A

2.0A

75A

UHVP408

800V

3.0A

1.4A

75A

UHVP409

900V

3.0A

1.4A

75A

UHVP410

lOOOV

2.5A

1.4A

60A

Operating and Storage Temperature Range -55'C to +150'C.
Thermal Resistance, B,lL- See Lead Temperature Derating Curve.

MECHANICAL SPECIFICATIONS

r

BAND INDICATES
CATHODE END

----:975

Available

In

4.4mm

MI~~OO

-----24.8mm

UHVP402·UHVP410

.175TYP.

MAl<,...
7.62mm--

BODYB

+.• t

.145 MAX.
3.68mm

· L

.040±.OOl
1.02mm±.03

'- .li.~;:;:

surface mount package; consult factory for information.

nL::::::Jn
2·125

SEMICONDUCTOR
FJRODUCTS

_UN.TRODE

UHVP402-41O
ELECTRICAL SPECIFICATIONS (AT 25°C UNLESS NOTED)
REVERSE
BREAKDOWN
VOLTAGE
@50"A

FORWARD
VOLTAGE

FORWARD
VOLTAGE

REVERSE
LEAKAGE
TA=25°C

UHVP402

220V

1.5V@4.0A

1.35V@2.0A

UHVP404

440V

1.5V@4.0A

1.35V@2.0A

UHVP406

660V

1.5V@4.0A

UHVP408

880V

UHVP409

990V

UHVP410

1l00V

1.95V@2.5A

TYPE
NUMBER

>}I

REVERSE
LEAKAGE
TA=125°C

REVERSE
RECOVERY
TIME
O.5A-1.0A-.25A·

4.01'A

25Ol'A

30ns

4.01'A

250"A

30ns

1.35V@2.0A

4.0"A

250"A

30ns

1.7V@3.0A

1.4V@1.4A

4.0jlA

250"A

50ns

1.7V@3.0A

1.4V@1.4A

4.0"A

250"A

50ns

1.6V@1.4A

5.01'A

500,..A

65ns

See Figure 20 for charactenstlc waveform.

Typical Forward Current vs Forward Voltage
20

~

10

#. ~
1# Z

I
I-

~

"u
"'"
~
fZ

kh If i'~/ IIJ '"
'f. III
rI

150OC,___

~

125jC
.2

.2

.4

.6

VF

.8

~ /. V
...,., ~ V, /

I

iE

'"
"u'"
"'"
~

-55OC

fZ

Isboc

I IIl-4

-II Jr1
'I /

1250C
.5

I
.2

.2

.4

.6

.8

iE

'"'"u
"w

500I-lA

200,.,A

200,.A

H>OIlA

lOO,.A

-'"""

lOllA

5.A

ill>

2.A

il!

I~

I

SOOnA

-"

IrnA

4AMP SERIES

20folA

~

.....

200nA

lOOnA
50nA
20nA

lOnA

o

--'"""
25

1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

Typical Reverse Current
vs Applied Reverse Voltage

500IAA

50,.,A

I--

Figure 2

Typical Reverse Current
vs Applied Reverse Voltage

I-

-

V, - FORWARD VOLTAGE - (V)

Figure 1

IrnA

-55OC

1'-25OC

II I

1.0 1.2 1.4 1.6 L8 2.0 2.2 2.4

FORINARD VOLTAGE - (V)

-

A~ ~

2.5 AND
3 AMP SERIES

10

I-

250C

.5

I

Typical Forward Current vs Forward Voltage
20

~~

4AMP SERIES

1~

-

-----

50,.A

ffi
'""'"

r--

~~os,...

r- ~'~~~~ERIES

~

20fAA

125's..

1Ol-iA

~

()

~
~

.........

'"I

5,.A
2,.A
I~

~~:s..

500nA

-" 200nA

...

lOOnA
50nA

..... .....-

i-"""

20nA

lOnA
50

75

100

o

125

Figure 3

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

25

50

75

100

125

PERCENT OF VR RATING

PERCENT OF V, RATING

Figure 4

2-126

PRINTED IN U.S.A.

UHVP402-UHVP41O
Reverse Recovery Current vs difdt

Reverse Recovery Current vs difdt
20

20
lB

4 AMP SERIES

18

16

wg

1Q I
w ....
>z
Ww

mg
0:1

14

~C:

«::>

10

'du

!::i\;

~

,e;

"""I-'" f-""I-""

.... w
j~~

I&:~

c:

1oIIII~

...............

16

~Oj

0:0:

t:fT.-p

~o:

«"

!'!u
Q.i\;
~w

~~

12

~

10

I&:~ ~I-'"

.~~

~I--: ~f-I-

300

200

Figure

g

2.5 AND
3 AMP SERIES

~
0:

60

..§
j

....
~

50

40
30

~

I

..5'

20
10

~
;::

.... ....

;:: 70

0:

90

80

"'w

ljj

6

100

:;

8

400

Reverse Recovery Time vs Junction Temperature
IF = 2A, di/dt = 200A/~s, VR = 50V

4 AMP SERIES

il!

300

NOTE: See Figures 9 a~d 10.

100

iI:
w

I

200

100

Reverse Recovery Time vs Junction Temperature
(iF = 2A, difdt = 200Af"., VR = 50V)

BO

I-

difdt - RATE OF FALL OF FORWARD CURRENT - (AIl'S)

Figure 5

I

r-r
J

400

NOTE: See Figures 9 and 10.

g

\,I. IA

f- .....

i.II~

di/dt - RATE OF FALL OF FORWARD CURRENT - (Alj.lS)

90

\,~~f-'

..... \~~

~ ~
k~ 1-"' ..... I-

I::;e;

... ~t;;:

Io!!!~ 1::::;-"100

~~~

14

wI-

~~

12

C:c:

I
I

2.5 AND
3AMPSERIES

....

~f-

--

'"i\;

~

~ ~I-""

-,.... -

0:

ljj
0:

~I

l,!..- f-

~

..5'
..§
j

70

60

>- ~

50

40

~f-' l- f-'

30

-

rrt

~

I-

...... ~

-

tb

20
~

...... I-

,....

~

l- f-'

10

o
20 30 40 50 60 70 80 90 100 110 120 130 140 150

20 30 40 50 60 70 80 90 100 110 120 130 140 150

Tj - JUNCTION TEMPERATURE -IOC)

Tj - JUNCTION TEMPERATURE -IOC)

NOTE: See Figures 9 and 10.

NOTE: See Figures 9 and 10.

Figure 7

Figure 8

Rectifier Current During Reverse Recovery

t,,II RM Measurement Circuit, Simplified

+v

DEVICE
UNDER
TEST

NOfE: The gate of the MOSFET •

is double pulsed. The first pulse
ramps up the inductor current. A
short interpulse period forward
biases the device under test to
the desired IF' The second pulse

reverse biases the device under
test creating the desired di/dt so
that the reverse recovery parameters can be measured. The
pulse pair is repeated at a low
duty factor and does not result in
device heating.
Figure 9

UNITRODE· SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172

TEL (617) 926-0404· FAX (617) 924-1235

Figure 10

2-127

PRINTED IN U.S.A.

..

UHVP402-UHVP410
Typical Peak For:y.rard Recovery Voltage vs diF/dt
(iF = lA, di Idt measured from 10% to 90% of iF)

Typical Peak Forward Recovery Voltage vs diF Idt
(iF = lA, di/dl measured from 10% to 90% of iF)

10

4.0
4AMPSERIES

c

2.5 AND
3AMPSERIES

·3.5

II:

~~.

3.0

01

"-w

~§1.
~il;

2.0

I~

1.0

Q.w
~t;

l--[)

1.5

,II:

-

..

2.5

~~

-~

~

ff

>

0.5

10

50

20

100

10

200

Figure 11

4.0

4.0
4AMPSERIES

Re j;A ·60'CIW

3AMPSERIES

Re j-A =60°C/W

g

I

I

!zw

3.0

0:
0:

0:

3.0

:::>

:::>

u

u

c0:

0

~ 2.0 .......

lr
w

~

~
I
~

200

Average Forward 'Current vs 'Ambient Temperature
(50% Duty Cycle, Square Wave)

g
ffi

100

Figure 12

Average Forward Current vs Ambient Temperature
.
(50% Duty Cycle, Square Wave)

II:

50

20

di,ldt - RATE OF RISE OF FORWARD CURRENT - (N"s)

di,ldt - RATE OF RISE OF FORWARD CURRENT - (N"s)

0:

~

1.0

"...,.

~

lr

" ""-

o
25

50

2.0

.............

w

75

100

~~
I

1.0

...........

~

~

'"

125

150

"-

a
25

175

T, - AMBIENTTEMPERATURE - (OC)

Figu~ 13

K

50

75

100

~

150

125

TA - AMBIENT TEMPERATURE -

175

(OC)

Figure 14

Average Forward Current vs Lead Temperature
(50% Duty Cycle, Square Wave)

Average Forward Current vs Lead Temperature
(50% Duty Cycle, Square Wave)
4AMPSERIES

3 AMP SERIES

___4--__-l___ L- ~~~~ ~"tmH

OL-__-L____L-__-L____L-__

OL---~----~--~----~--~--~

25

50

75

100

125

150

175

25

T, - LEAD TEMPERATURE - ('C)

75

100

~

125

__

150

~

175

T, - LEAD TEMPERATURE - ('C)

Figure 16

Figure 15
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

50

2-128

PRINTED IN U.S.A.

UHVP402-UHVP41O

Forward Pulse Current vs Pulse Duration

Reverse Pulse Power vs Pulse Duration

1O.0D0._~~
SquarePulseCurrentvs
Duration for Non Repetitive Pul~
(B.3mSSlnewaveequwalent

toJmssquJrewave)

__~-U~~-L~~~~-L~WU
1m,
lOms
lOfoIS
100",5

IOL-J-~~lli-~-LLUilll

lOOns

~

...

__~-U~~~~~WL~~~~
lOJ.js
lOO}-ls
IOms
1m'

IO~~~~~~-L~~

lOOns

PULSE DURATION

PULSE DURATION

Figure 17

Figure 18

Characteristic Waveform

Transient Thermal Response

(O.5·1.0/0.25A)

100

--I

1"-

trr

_t

tREC =.25A

t

~

,

1\

J

1.1
IOOIAS

1m,

lOms

lOOms

I,

100,

-+
IRR=l.OA

PULSE DURATION

Figure 19

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

-t

Figure 20

2-129.

PRINTED IN U.S.A.

..

RECTIFIERS

URI05-UR125
UR205-UR225

Radiation Tolerant, 1 Amp-2 Amp
FEATURES

DESCRIPTION

•
•
•
•
•

These .devices are particularly suited to
applications where radiation is present.
These units have unique ability to withstand high levels of neutron, gamma and
electron radiation.

Radiation Tolerant: to 10'. NVT
Continuous Rating: to 2A
Controlled Avalanche
Surge Rating:t025A
Miniature Package

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

50V
100V
l50V
200V
250V

1 Amp

2 Amp

Series
URl05
URllO
UR1l5
UR120
UR125

Series
UR205
UR2l0
UR2l5
UR220
UR225
1 AMP
SERIES

2 AMP
SERIES

Maximum Average D.C. Output Current
@TA =25·C ....
. lA .... .
...2A
........ 1A
.............. "'''' 0.5A .... ..
@ TA=lOO·C .
Non-Repetitive Sinusoidal
.... 25A
. 20A...
Surge Current (8.3ms) .
Operating Temperature Range.
.. .......... ..
.. ......... -195·C to +175·C
Storage Temperature Range.
.. ..... -195·C to +200·C
Thermal Resistance.
. See Lead Temperature Derating Curve

ELECTRICAL SPECIFICATIONS (at 25·C unless noted)

Type

Maximum
Leakage
Current
@PIV

Maximum
Forward
Voltage

PIV

Drop

UR205
UR210
UR215
UR220
UR225
UR105
URllO
UR115
UR120
UR125

2S'C

SOV
100V
150V
200V
250V

1.0V@ 1A

50V
100V
150V
200V
250V

1.0V@0.5A

31'A

31'A

Maximum
Radiation
Tolerance

lOO'C

5Ol'A

10'. NVT
10'·
10'5
10"
10"

5Ol'A

10'·
10"
10'5
10"
10'4

MECHANICAL SPECIFICATIONS
UR105-UR125 UR205-UR225
BAND INDICATES
CATHODE END

=

r.155TYP.

~

3.9mm

::t1

~;OOM'N~50M~
17.8mm

BODY A

r-=-

=

6.35mm

I

.085 MAX.
2.16mm

t
L.030±.OOl
O.77mm ±.O3

.055TYP.
1.4mm

1.625 MIN.
41.3mm

Part Identification: White band indicates "UR." Part num·
ber printed on body.
Polarity: Denoted by white band.

Weight: 0.26 grams, typical.

nn

SEMICONDUCTOR

L.::::J' PRODUCTS
2-130

_UNITRODE

URI05·UR205 URllO·UR21O UR115·UR215 UR120·UR220 UR125·UR225

Forward Pulse Current vs Pulse Duration
10,000

g
....

z

1,000

Reverse Pulse Power vs Pulse Duration
100,000

ALL SERIES

Square Pulse Current vs
Duration for Non-Repetitive Pulse

Square Pulse Current vs

~+++mm:=t:j:mjjjjouration for Non-Repetitive Pulse

(8.3 ms sine wave equivalent

r--.

~

to 3 ms square wave)

'"crcr

'"0;:

.
..'"'"

:>

u

'":>....'"

.

(8.3 ms sine wave equivalent
to 3 ms square wave)

10,000

cr

1,000

....

100

:>

100

10
.lps

l~s

lOJ,lS
lOO.lls
PULSE DURATION (SECONDS)

Ims

10
lOOns

IOms

Ips

z

....
z

u

I.!;..= "..:'\,.

'"u:
;::

~

:>

o

u

'"
'"'"
"
cr
'">


u

i'-..



cr

jill

"""

~

~

Turret 1/2" centers
'Printed Circuit

t---

~ f::~

13
UJ

"#
10

100

1,000

CYCLES AT 60 Hz HALF SINE WAVE

UNITRODE • SEMICONDUCTOR PRODUCTS

580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2·131

PRINTED IN U.S.A.

HERMETIC SCHOTTKY RECTIFIERS
6 Amp, 45 Volts

USD245C
USD245CHR2
USD245CR
USD245CRHR2

FEATURES

DESCRIPTION

• MIL-S-19500 Type Screening
Available

The USD245C series hermetic Schottky rectifier is ideally suited for output rectifiers and
PWM protection in high efficiency, low voltage, high reliability switching power supplies.
The series combines Schottky rectifiers in one convenient package; thus simplifying
installation and reducing component parts count.

• Extremely Low VF and IR
• High Surge Capability
• Low Recovered Charge
• Rugged Hermetic Package,
No Pressure Contacts
• Dual Rectifier in One Package
• Available in Reverse Polarity (CR)

ABSOLUTE MAXIMUM RATINGS (Either leg, unless noted.)
Peak Repetitive Reverse Voltage, VRRM ..........................•.• _....... _..... 45V
Working Peak Reverse Voltage, VRWM .............................•..... _........ 45V
DC Blocking Voltage, VR ..•.....................••....•.................•........ 45V
Non-Repetitive Peak Reverse Voltage, VRSM ...•...•.......•........ _....••.•.....• 54V
Average Forward Current (50% Duty Cycle), IFIAV), Full Wave Configuration .......... 6A
Either Leg Alone ......•••.....•.. 4A
TCASE = lOODC
VRWM = 45V
Average Forward Current (50% Duty Cycle), IFIAVI (Note 1), Either Leg Alone ..•..... 2A
R8C-A = 68°C/W, TA= 25°C
VRWM = 45V
Non-Repetitive Peak Surge Current, IFsM ..............•...... _................... 80A
8.3ms, Half Sine Wave
Operating and Storage Junction Temperature Range, Top, TSTA ....... -65°C to + 175°C
Thermal Resistance, Junction to Ambient, RSJ-A .•••.....................•..• 175°C/W
Thermal Resistance, Junction to Case, R8J-c ...•... ; .•.....•.•.....•.......... 15°C/W
Note: 1. Using Wakefield Type 205 heatsink with conveclion cooling.
For more definitive data refer to the Output vs Temperature curves on this data sheet.

MECHANICAL SPECIFICATIONS
USD245C SERIES

J:ih
rm

~C.CHR

6

COMMON (CATHODE)

G

cr-kl---r--t>I- CR. CRHR

W~tJ

H
3 PLCS

5~A
~·~8

*

COMMON

C

. ' , 6C;M~ON

A
B
BOTTOM VIEW

TO-205AF (TO-39)

C
0
E
F
G
H
J
K

MILLIMETERS
0.72-0.86
0.88
5.08
9.14.0IA.
8.25 CIA.
4.30-4.57
18.03 REF.
0.41-0.53 CIA.
12.70-14.22
0.36-0.45

(ANODE)

INCHES
0.028-0.034
0.D35
0.20
0.36 alA.
0.3250IA.
0.169-0.180
0.71 REF.
0.016-0.021 CIA.
0.50-0.56
0.014-0.018

All Dimensions in Inches and Millimeters

n
n
L:::::J
9/86

2-132

SEMICONDUCTOR
PRODUCTS

_UNITRODE

USD245C USD245CHR2 USD245CR USD245CRHR2
ELECTRICAL CHARACTERISTICS PER LEG (Ti = 25°C)
CHARACTERISTICS

SYMBOL

LIMIT

UNITS

Maximum
Instantaneous
Reverse Current

iR

2

mA

Maximum
Instantaneous
Reverse Current

iR

20

mA

Maximum
Instantaneous
Forward Voltage
(Note 1)

VF

0.48
0.56
0.68

__ V

0.45

Capacitance

CT

450

pF

Voltage Rate
of Change

dvldt

1000

VII's

CONDITIONS

VR

=45V

VR

=45V

Pulse Width =400ps
Duty Cycle = 1%

Pulse Width =400ps
Duty Cycle = 1%
Te = 125°C

= 1A
=2A
=4A
iF =2A
Ti = 125°C
VR =5V
VR =45V
iF
iF
iF

=400ps
Duty Cycle = 1%
Pulse Width

Note: 1: Measured with anode and cathode lead length of 0.2" from case.

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices specified USD245CHR2 and USD245CRHR2.
SCREEN
l. High Temperature

MIL-STD-750
METHOD

CONDITIONS

= 150°C

1032

24 Hours @ TA

2. Temperature Cycle

1051

F, 20 Cycles, -55 to +150OC. No dwell required
@ 25°C, t ;;. 10 min. @ extremes
.

3. Hermetic Seal
a. Fine Leak
b. Gross Leak

1071
H, Helium
C, Liquid

4. Thermal Impedance
5. Interim Electrical Parameters

6. High Temperature Reverse Blocking
7. Final Electrical Parameters

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA02172
TEL. (617) 926-Q404 • FAX (617) 924-1235

Sage Test

GO/NOGO

VF and IR @ 25°C

Similar to
Method 1040

'12 Sine Reverse, t

GO/NOGO

2-133

= 48 Hours, Te = 125°C, VRWM
= rating, F = 50-60 Hz, 10 = OA

VF + IR@25°C
PDA = 10% (Final Electricals)

PRINTED IN U.S.A.

USD245C USD245CHR2 USD245CR

Output Current vs R.J_A
T.mblent = 25°C. 50% Duty Cycle

USD245CRHR2

Typical Junction Capacitance
vs Reverse Voltage
1000

~

800

.e

~

I-

~

600

4~

""'"
i[
l-

35V
400

!~ t-....

I-

"
o

-.......;::

25

50

:::::::-.

100

75

\

'"

200

125

150

Full-Wave Output Current
vs Case Temperature

\

\

\

I-

i5

'\,

'"
"
i[
0:

::>

,,
,

i\

\,

VRWM=45 -

l-

I-

"oI

\

,

\
130

115

50

Output Current vs Ambient Temperature
50% Duty Cycle Application (I"e..) and VOOM)

,,

VRWM ~ 10 • -,.

100

40

30

VR - REVERSE VOLTAGE - (V)

7

'\\
85

20

10

175

- R'J-A - THERMAL RESISTANCE - ('C/W)

1\

--

145

\.
160

25

175

50

75

100

125

150

175

TA - AMBIENT TEMPERATURE - ('C)

Te - CASE TEMPERATURE - ('C)

Typical Reverse Current
vs Reverse Voltage·

Typical Forward Current
vs Forward Voltage
100rnA

175'C

Pulse Width = 4001'5.

-t

Duty Cycle = 1%.

lOrnA

Measured with Anode and

Cathode Lead Length of
0.2" from Case.

I-

i5

~

""
D

'"

IDA
SA
6A
4A

~

2A

-"

IA
.SA
.6A
AA

~ lOOIlA

I

25'C

o .1

v, -

I

V
"25'C- 1=

10pA

I-""'

I I

.2A
.IA

'"
g

)'1'

VI

-

125'C

~

'"
almA

~

125'C

-0:

e

I-

IpA

II

10

20

30

40

50

VR - REVERSE VOLTAGE - (V)

.2 .3 .4 .5 .6 .7 .8 .9 1.0
FORWARD VOLTAGE - (V)

NOTE: All curves, except FUll-Wave Output Current, apply to either leg.
UNITROOE • SEMICONOUCTOR PRODUCTS
5S0 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

2-134

PRINTED IN U.S.A.

DUAL POWER SCHOTTKY RECTIFIERS
60A Pk, 45V

USD335C
USD345C
USD335CHR2
USD345CHR2

FEATURES

DESCRIPTION

•
•
•
•
•
•
•

The U5D320C series has two Schottky
barriers arranged in a common cathode
configuration and is ideally suited for a
full wave output rectifier in low voltage
switching power supplies.

Very Low Forward Voltage
Low Recovered Charge
Rugged Package Design (TO-3)
High Efficiency for Low Voltage Supplies
45V Blocking @ Rated T,max
50V Repetitive Surge Voltage
Dual Schottky Rectifier in a Single Package

ABSOLUTE MAXIMUM RATINGS (Total for USD300C Series)

= lOO°C

Average Rectified Forward Current, 10 @ Tc

USD335C

USD345C

USD335CHR2

USD345CHR2

....... _................. _.... _....... _.. 30A ............. _.......... .

ABSOLUTE MAXIMUM RATINGS (Per Diode)
Working Peak Reverse Voltage VRWM ' ................................................ _..... 35V ............ .45V .... .
DC Blocking Voltage, VR ................................................................. 35V ............ .45V .... .
Peak Repetitive Surge Voltage, VRSM @ IRM .........•..................................... 42V ............ :54V ..... .
Average Rectified Forward Current, 10 ........................................ 30A in full wave configuration* ......... .
Non-repetitive Peak
Surge current (8.3 mS), I FSM ........................................................ 500A ..................... .
Peak Reverse Transient Current, I RM ..................................................... 2A ...................... .
Storage Temperature Range, Tst 9 ••••••.•••••••••••••••••••••••••••••••••••••••••• -55°C to +200°C................ .
Peak Operating Junction Temperature, T, max' ............................................ 175°C .................... .
Thermal Resistance, Junction to Case,R oJc ............................................. 1.4°C/W ................... .
• Each Anode Pin Limited to l8A Average.
Package Capability 30A Average.

ELECTRICAL CHARACTERISTICS (TeASE = 25°C)
Symbol

Limit

Units

Maximum Instantaneous
Reverse Current

iR

10
50

mA
mA

Te = 25°C, VR = VRWM
Te = 125°C
Pulse Width =400115
Duty Cycle =1 percent

Maximum Instantaneous
Forward Voltage

VF

0.57
0.66
0.60

V
V
V

iF = lOA, Tc =25°C
iF = 20A, Te =25°C
iF =20A, Te = 125°C
Pulse Width =300115
Duty Cycle =1 percent

Characteristic

Ct

2000

pF

VR =5.0V

dvldt

1000

vl 115

VR =VRWM

Capacitance
Voltage Rate of Change

Conditions

MECHANICAL SPECIFICATIONS
NOTE.

ANODE 2 •

Leads may be soldered to within
1/,," of base provided

•1

temperature~

time exposure is les5 than 260 a C
for 10 seconds.

~EtE J7
I

ins.

e

~.l..-

i'

J-

0

USD300C SERIES
USD300CHR2 SERIES

.ANODE I

~
"'K

ANODE 1
ANODE 2

A
B
C

D
E

F

L

G
H

J
K

L

M

.875 MAX.
.135 MAX.
.250-.450
.312 MIN.
.038-.043
.IBB

DIA.
MAX. RAD.

1.177-1.197
.655-.675
.205-.225
.420-.440
'.525 MAX. RAD.
.151-.161 DIA.

mm•
22.23 MAX.
3.43 MAX.
6.35-11.43
7.92 MIN.
0.97-1.09 DIA.
4.7B

MAX. RAD.

29.90-30.40
16.64-17.15
5.21-5.72
10.67-11.18
13.34 MAX. RAD.
3.84 4.09 DIA.

nlJ:::::Jn

SEMICONDUCTOR
PRODUCTS

Notes: All metal surfaces tin plated.

4/82

TO·204AA (TO-3)

CASE (CATHODE)

F~.M

G

14

I

2-135

__ UNITRDDE

USD335C
USD345C
USD335CHR2 USD345CHR2
Typical Reverse Curreni
vs. Reverse Voltage

Typical Forward Current
vs Forward Voltage

10°mM~

1000

-;;;;0

~
......

) 5°C

I

"
.01

V,- FORWARD VOLTAGE (V)

o

A

/ ' -f

75°C

-"

0.1 .2 .3 .4 .5 .6 .7 .8 .9 1.01:11.21.31.4

k

-~r ....-V

100

V

/

~v

'J;

20

..
40

60

80

100 120

% OfVR

V.~., Rating vs. Case Temperature

50
45
Ur03451C

35

. USD335C

~

i

,:
20

USD320C

1\
-50

25

50

75

100

125 150 175

Case Temperature C'C)

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices specified USD335CHR2, 345CHR2.
'SCREEN

MIL-STD-750
METHOD

CONDITIONS

l. High Temperature

1032

24 Hours @ TA = 150?C

2.

Temperature Cycle

105i

F, 20 Cycles, -55 to +150·C. No dwell required
@ 25'C, t ~ 10 min. @ extremes

3.

Hermetic Seal
a. Fine Leak
b. Gross Leak

1071
H, Helium
C, Liquid

4. Thermal Impedance
5.

Interim Electrical Parameters

Sage Test
GOINOGO

6.

High Temperature Reverse Blocking

Similar to'
Method 1040

7.

Final Electrical Parameters

:nOINOGO

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET' WATERTOWN, MA 02172
TEl. (617) 926·0404., FAX (617) 924·)235

2-136

VF and IR @ 25.·C
V, Sine Reverse,t = 48 Hours, Tc = 125°C, VRWM
= rating, F = 50·60 Hz, 10 = OA
V F + IR @25OC
PDA = 10% (Final Electricals)

PRINTED IN U.S.A.

USD520
USD535
USD545
USD550

POWER SCHOTTKY RECTIFIERS
150 Amp Pk, Up to 50V
FEATURES
o Very Low Forward Voltage (0.6V at 60A, 125°C)
• Low Recovered Cha rge
• Rugged Package Design (00·5)
• High Efficiency for Low Voltage Supplies
• Low Thermal Resistance (0.8°C/W)
• High Surge Current (IOOOA)
• Low Reverse Current «50mA at rated VR at 125°C)
• Available with Flexible Top Lead

DESCRIPTION
This series of Schottky barrier power
rectifiers is ideally suited for output
rectifiers and catch diodes in low
voltage power supplies. The Unitrode
high conductivity design, using a heavy
copper top post and 4 point crimp,
ensures cool thermal operation and low
dynamic impedance. Rugged design
absorbs stress that can damage glass-tometal seal during installation and use.

ABSOLUTE MAXIMUM RATINGS
USD520

USD550

USD545

USD535

Working Peak Reverse Voltage, VRWM .................. 20V ........... 35V ........... 45V ........... 50V
DC Blocking Voltage, VR .............................. 20V ........... 35V ........... 45V ........... 50V
Peak Repetitive Surge Voltage, VRSM @ IRM ............. 24V ........... 42V ........... 54V ........... 60V
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz,
50 percent Duty Cycle), I'RM ................................................... 150A (at Te 115°C)
Average Rectified Forward Current, IFIAVI ............................................. 75A (at Te = 115·C)
Non-repetitive Peak Surge Current (8.3mS), I'SM ................................................. 1000A
Peak Reverse Transient Current, IRM ................................................................. 2A
Storage Temperature Range, T st......................................................... -55· to +200·C
Operating Junction Temperature, TI ............................................................. +175·C
Thermal Resistance Junction-to-Case, R9 JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8·C/W

=

ELECTRICAL CHARACTERISTICS (TeASE

= 25·C)
Symbol

Characteristic

Limit
USD550

20
(50)

20
(75)

=
=

Maximum Instantaneous
Reverse Current

iR

Maximum Instantaneous
Forward Voltage

VF

0.50
0.68
0.60

Flexible Top Lead Option

VF

(0.63)

V

Maximum Capacitance

C.

4000

pF

dv/dt

1000

VipS

Maximum Voltage
Rate of Change

Conditions

Units

USD520-545

VR VRWM
(Te 125·C)
Pulse Width 300ps,
Duty Cycle
I percent

mA

=
=
iF = lOA, Te =25·C
iF =60A, Te =25·C
iF =60A, Te = 125·C
iF =60A, (Te = 125·C)
VR =5.0V
VR =rated

V
V
V

MECHANICAL SPECIFICATIONS
USD520
USD535
USD545
USD550
0

m"~

A

ins.
.225'" .005

B

.060 MIN.

1.52 MIN .

.156;t .020

3.96:!: 0.51

.156 MIN. FLAT

3.96MIN. FLAT

.667 OIA. MAX.

16.94 OIA. MAX .
2.29 MAX .
17.20:!: 0.25
9.53 MAX .

E

.090 MAX.

.677:!: .010
.375 MAX.

1'4·28
UNF·2A

. 140MIN.DIA.
K 1.000 MAX.
L
.450 MAX.

"
N

.438:!: .015
.078 MAX.

Note.:
1.
2.
3.
4.

5.72;t 0.13

3.56 MIN. OIA .

25.40 MAX.
11.43 MAX.

11.13'" 0.38
1.98 MAX.

nn

Cathode is stUd.
All metal surfaces tin plated.
MaximUm unlubricated stud torque: 30 inch pounds (35 kg. em).
Angular orientation of terminal is undefined.

SEMICONDUCTOR

~ PRODUCTS

2-137
4/82

00-5

_UNITRODE

USD520 USD535

Typical Forward Current
vs Forward Voltage
100

g
~

~

JO

::>

u

17 ·c ~
150·C

F

/1

~12:C

fi?

75'C

'"~

•

USD550

Typical Reverse Current
vs Reverse Voltage
1000

=--~

-

I-- 2 100

§.
~

i

25°C

I.

USD545

1SO"C

..,..

I-- '--- 1-125"C

r--

=>

(,) 10.0

F:--55'C

-

1-175"C

w

~

12

.I,

7~·c

j

/

1

1.0

.1

"b"'Z~·C
0.1

.1

.2

.3

.4

.5

.6

.7

.8

.9

l.0

o

10

20

VF-FORWARD VOLTAGE (V)

30

40

50

60

70

80

90

100

VR-REYERSE VOLTAGE (% of VRWM)

V.,M..! Rating y.
Ca.e Temperature

Maximum Current
vs Case Temperature
60
ISO

'"~~-t: ...

....
'" ..
I"

\

o-z

'"'""- '"

.. :J

"'u
"'0

..

,

-: ~

40

USr45
40

\

\

\
125

35

1\
\

f:;:: 20 KHz

100

so

45

\

r- SQUARE WAVE

"-",

VR _0

\.

80 I--V R = RATED
50% DUTY

usr

50

'\.

120

:€

~

1\
150

I

USD535

30

I

25

,;

175

20

U50520

T c - CASE TEMPERATURE (Oe)

\

15
10

-50

-25

25

50

75

100

125

150

175

CASE TiMPERATURE (Ge)

MECHANICAL SPECIFICATIONS
USD520F
USD535F
USD545F
USD550F

FLEXIBLE TOP LEAD (OPTIONAL)
Add an "P' Suffix to Part Number.

Standard JEDEC

00·5 Package

@

I iTMl N~{

M

-, 11 p

~CaDle
'8"'''bI./5~~1
7 95/36
"I
Sleevlng
Covers

l-Qj

S

INCHES
.718 MAX.

S

450 ± .250
.525 MAX.
.675:t .035
205 t .005
075:t OlD

T

1125 MAX

P
Q
R

II

.Shrlnkable

N

DO-5 with Flexible Lead

MILLIMETERS
1824 MAX.

114.3 ± 6.35
13.23 MAX.

17.15:t 0.89
5.21:t 0.13
1.91 t 0.25
28.58 MAX.

l.",
-To 125°C (Ambient)
Note:

Consult Factory for Non-standard lead lengths.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 .FAX-(617) 924-1235

2-138

PRINTED IN U.S.A.

USD635
USD640
USD645
USD650 . .

POWER SCHOTTKY RECTIFIERS
12A Pk, up to 50V

FEATURES
• Very Low Forward Voltage
• Reverse Transient Capability
• Economical Convenient Plastic Package
• Mechanically Rugged
• 50V Working Voltage @ Rated T,'m..'

DESCRIPTION
The USD600 series of Schottky power
rectifiers is ideally suited for output
rectifiers and catch diodes in high
frequency low voltage power supplies.

ABSOLUTE MAXIMUM RATINGS
USD635
USD640
USD645
USD650
Working Peak Reverse Voltage, V.WM ....................................................... 35V .............. 4OV............... 45V .............. 50V .. .
DC Blocking Voltage, V........................................................................ 35V .............. 4OV............... 45V .............. 50V .. .
Peak Repetitive Surge Voltage, V.SM @ I.M ................................................ 42V .............. 48V............... 54V .............. 60V .. .
Average Rectified Forward Current @ Te = U5°C, IF (AV) ............................................................. 6A ................................ .
Peak Repetitive Forward Current (Rated V.,
Square Wave, 20 KHz, 50% Duty Cycle, @ Te = U5°C), IF• M ................................................... 12A .............................. ..
Non·repetitive Peak Surge Current (8.3ms), IFSM ..................................................................... 150A ............................... .
Peak Reverse Transient Current, I.M ...................................................................................... lA ............................... ..
Dperating Junction Temperature, T, .................................................................................... 150°C ............................ ..
Storage Temperature Range, Ts ....... : ........................................................................... -55°C to +150°C ....................... .
Thermal Resistance, Junction to Case, RSJe ......................................................................... 3.0°ClW ............................ ..

ELECTRICAL CHARACTERISTICS (TeASE =25°C)
SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

CHARACTERISTIC

i.

5

mA

V. V.WM
Pulse Width 400ps
Duty Cycle 1 percent

Maximum Instantaneous
Reverse Current

i.

50

mA

V. V.WM
Pulse Width 400ps
Duty Cycle 1 percent
Te 125°C

0.55
0.65

V

0.48
0.60

V

Maximum Instantaneous
Forward Voltage

Capacitance
Voltage Rate of Change

VF

C.

1000

pF

dvldt

1000

Vips

CONDITIONS

=

=
=

=

=
=6A
=12A
iF =6A J
iF =12A
V. =5V
V. =V.w~

=
=

iF
iF

=125°C

Te

MECHANICAL SPECIFICATIONS
USD600 SERIES

SEATING
PLANE

MILLIMETERS

DIM

MIN

A

1423
9.66
3.56
0.51
3.531
2.29

B

C
D
F

G
H
J
K

L
N

10.66

INCHES
MAX
MIN
0.560 0.625
0.380 0.420

482

0.140

1.14

0.020
0.139
0.090

3733
2.79

6.35
0.38
12.70

1.14
4.83

Q

2.54
2.04

T

5.85

•s

MAX
15.87

1.14

0.64
14.27
1.77

533
3.04
2.92
1.39
6.85

TO-220AC

0.015
0.500
0.045
0.190
0.100

a aBO
0.045
0230

0.190
0.045
0147
0.110

0.250
0.025
0.562
0.070
0.210
0.120
0.115
0.055
0.270

nn

SEMICONDUCTOR

~ PRODUCTS

4/82

2-139

_UNITRODE

USD635 USD640 USD645 USD650

Reverse Current
vs. Voltage

Forward Current
vs. Forward Voltage
100

100
MAXIMUM VF VS IF VS T-

TYPICAL VF VS IF vs T - "-

g

~'

>- 10

i5
0:

125°C
:;(

g

I/' /

L.?
'I-~oC

0:

0:

::J

U

U

I

0

0:
«

w

-

150:

::J

E

I-

10

W /

-50 -25

25

50

75

100

125

150

175

TEMPERATURE (OC)

"\
125

150

2-140

PRINTED IN U.S.A

DUAL POWER SCHOTTKY RECTIFIERS
12A Av, up to 50V
FEATURES
• Very Low Forward Voltage
• Reverse Transient Capability
• Economical Convenient Plastic Package
• Mechanically Rugged
• 50V Working Voltage @ Rated Tllm."

USD635C
USD640C
USD645C
USD650C

DESCRIPTION
The USD600C series of power Schottky rectifiers, in the industry standard TO-220
package, is specifically designed for operation in power switching circuits to
frequencies in excess of 100 KHz. The series combines Schottky rectifiers in one
convenient package; thus, simplifying installation, reducing heatsink requirements
and component parts count.

ABSOLUTE MAXIMUM RATINGS (Per Diode Unless Otherwise Noted)
USD635C
USD640C
USD645C
USD650C
Working Peak Reverse Voltage, VRWM ...................................................... 35V .............. 40V .............. 45V ............ 50V ... .
DC Blocking Voltage, VR ._ .................................................................... 35V .............. 40V .............. 45V ............ 50V ... .
Peak Repetitive Surge Voltage, VRSM @ IRM ........................ -..... · ... · ............. 42V ............. .48V .............. 54V ............. 60V ... .
Average Rectified Forward Current @ Te = lI5°C, 10 • .........................................•.................. 12A .............................. .
Non-repetitive Peak Surge Current (8.3ms), IFSM .................................................................... 150A ............................... .
Peak Reverse Transient Current, IRM .................................................................................... 1A ............................... .
Operating Junction Temperature, Ti ........... ...................................................................... 150°C ............................. .
Storage Temperature Range, TSt, .............................................................................. -55°C to +150·C ...................... .
Thermal Resistance, Junction to Case, R.Je ...... .......... .......... ..... ....... ........... ....... ....... ....... 3.0°C/W ., .......................... .
·Full Wave Center-Tap;

10 I~"'j

20 KHz Square Wave

ELECTRICAL CHARACTERISTICS (T CASE = 25°C) (Per Diode) ,
SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

CHARACTERISTIC

iR

5

mA

VR = VRWM
Pulse Width = 400ps
Duty Cycle = 1 percent

Maximum Instantaneous
Reverse Current

iR

50

mA

VR= VRWM
Pulse Width = 400ps
Duty Cycle = 1 percent
Te = 125°C

0.55
0.65

V

iF = 6A
iF = 12A

0.48
0.60

V

iF = 6A
iF = 12A
VR = 5V

Maximum Instantaneous
Forward Voltage

VF

Ct

1000

pF

dvldt

1000

Vips

Capacitance
Voltage Rate of Change

CONDITIONS

l

Te = 125°C

VR = VRWM

MECHANICAL SPECIFICATIONS
USD600C SERIES

SEATING
PLANE

DIM

••
C
D

."

Pin 1

!
Pin 2
&
Tab

14.

Pi.n3

F

G

H
J

MILLIMETER.
MIN. M••

....

14.23

15.17
10.66

3."

<.&2

,0.51
3.531

1.1t
3.7]]

2.29

....

2.79

US
0.54

.....
..,..,
.....
.....
.....
0.140
0.139

0.015

K

12.70

....3

14.27
1.77
5.33

Q

'.54

3.D<

a.IMS
0.110
0.100

R

'.D<

'.R

0.0..,

S
T

US

1.1'

1. ..

U.

.....

INCHIS
.MIN
MAX

L
N

1.14

TO-220AB

0.615

Uta

0.045
0.147

.....
.....
.........

O.UO

UIO
0.120
0.115

.... ......,.

Q.2l0

nn

SEMICONDUCTOR

~ PRODUCTS

4/82

2-141

_UNITRODE

USD635C USD640C USD645C USD650C

Forward Current

Reverse Current
vs. Voltage

vs. Forward Voltage
100

.100

MAXIMUM Vr vs IF VS TTYPICAL Vr vs IF vs T-

.' ~ /

5
I-

i

125'C

...I-

10' /

10

JJoc

IU
'1.",0(,

::>

'-'

a

cr

;[
cr
it

l!:IlI- Vfifi/

1.0

~

.2

I

.6

1.0

.8

with VRWM

:::

::>

i2
I-

FREE AIR
(T A reference)

A

Vp,::

0

- :::t:::
~ ~ ............
VAWM

25

::

'"

RATED

50
75
100
TEMPERATURE (0C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA 02172

TEL (617) 926·0404· FAX (617) 924·1235

VAWM

~\

\\1\

Tc=--T. = - - - -

\
\\

u

I-

I

V,

,\

1\

~

.E

120

\ \

\

I-

0

100

~.V' I?RWM

RATED

(T c reference)

lO

::>

80

V. Rating vs. Temperature
100%

INFINITE HEATSINK

5

60

40

VOLTAGE (V)

14

12

VR VS T-

%ofVrt(V)

Average Output Current
vs. Temperature

/

VS

TYPICAll R liS VR VS T =

20

.4

v, -

;'

.01

.001

11

"

7:';:'-

MAXIMUM hi
...!£

-"

0.1

",0(,

~.;(,
P

\~

50

25

25

50

75

100

125

150

175

TEMPERATURE (oG)

~

125

150

2·142

PRINTED IN U.S.A.

POWER SCHOTTKY RECT~F~ERS

USD735
USD740
USD745
USD750

16A Pk, up to 50V

DESCRIPTION
The USD700 series of Schottky power
rectifiers is ideally suited for output
rectifiers and catch diodes in high
frequency low voltage power supplies.

FEATURES
o Very Low Forward Voltage
• Reverse Transient Capability
• Economical Convenient Plastic Package
o Mechanically Rugged
• 50V Working Voltage @ Rated Tilma"
ABSOLUTE MAXIMUM RATINGS

USD735
USD740
USD745
USD750
Working Peak Reverse Voltage, VRWM ...................................................... 35V .............. 40V .............. 45V
........ 50V .. .
DC Blocking Voltage, VR ...................................................................... 35V .............. 40V .............. 45V .............. 50V .. .
Peak Repetitive Surge Voltage, VRSM @ IRM ............................................... 42V .............. 48V .............. 54V .............. 60V .. .
Average Rectified Forward Current @ Te = 115°C, IF (AV) •.•.•.••..••••..•••.•••..•• •••• ••...•. .•••.••
.8A ............................... .
Peak Repetitive Forward Current (Rated VR,
.
Square Wave, 20 KHz, 50% Duty Cycle, @ Te = 115°C), IFRM .................................................. I6A .............................. .
Non-repetitive Peak Surge Current (8.3ms), IFSM ..................................................................... 200A .............................. .
Peak Reverse Transient Current, IRM ............................................................. :...................... lA ............................... .
Operating Junction Temperature, TJ ••••••••.•••.••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• 150°C ............................ .
Storage Temperature Range, Tst•.........•......•................................••.........•.............•..... -55°C to + 150°C ...................... .
Thermal Resistance, Junction to Case, R8Je ........................................................................ 2.8°C/W ............................ .

ELECTRICAL CHARACTERISTICS (T CASE = 25°C)
SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

CHARACTERISTIC

iR

5

mA

VR = VRWM
Pulse Width =400ps
Duty Cycle = 1 percent

. Maximum Instantaneous
Reverse Current

iR

50

mA

VR=VRWM
Pulse Width =400ps
Duty Cycle = 1 percent
Te = 125°C

0.55
0.65

V

0.48
0.60

V

Maximum Instantaneous
Forward Voltage

VF

Capacitance
Voltage Rate of Change

Ct

1000

pF

dv/dt

1000

V/JlS

CONDITIONS

=8A
= I6A
iF =8A }
iF = I6A
VR =5V
VR=VRWM
iF
iF

Te

= 125°C

MECHANICAL SPECIFICATIONS
USD700 SERIES

SEATING

TO-220AC

PLANE

re-I

~r:..c

l'

A
'
I"""L-i.

J~- 1~r
-

1-"

i-'

MILLIMETERS

~I
-

,~

MIN

MAX

MIN

MAX

A
B
C

1423
9.66
3.56
0.51

15.87
10.66

0.560
0380

0.625
0420

482

0.140
0.020

0.190

G

H

K

JI- II-< PIN 1. Cathode

.to

J~

o

Tab

3.531
2.29

H

I IT

;~I

~~ ~;:~:eled

to Cathode.

INCHES

DIM

1,- ,~

s;""

....j

I

L
N

0.38
1270
1.14
4.83

Q

25'

R
S

2.04
1.14
5.85

1.14
3.733
2.79
6.35
0.64
14.27
1.77
5.33
3.04
2.92
1.39
6.85

0.139

0.090
0.015
0.500
0045
0.190
0.100

0080
0.045

0.230

0.045
0.147
0.110
0.250
0.025
0.562
0.070
0.210
0.120
0115

0.055
0270

-

[bJJ

4/82

2-143

SEMICONDUCTOR
PRODUCTS

UNITRODE

USD735 USD740 USD745 USD750

Forward Current
vs. Forward Voltage

Reverse Current .
vs. Voltage
100

100

125'CC==-~

MAXIMUM VF VS IF VS T =
TYPICAL VF vs IF vs T

=

L,,7; ' l

,v.

g
f-

15

'~

lO

'"'"
"'"

10

4'

I"V

.5
f15

""""'""1
~~~'l25'C

l..?

'"'"u

?c,.C

:>

:>
(J

;'7

'"ffi

t7r 't(,j
., W

~

~ 1.0

~

.1

MAXIMUM IR vs VR VS T-

.!' .01

-"

I
0.1

o

c,'C
'l',;;.

~'v
~ p"

'"

TYPICAL 1ft VS VA vs T -

I! I

".2 I: I.4 I

J I J I

.001
20

.6

.8

40

100

80

60

120

%ofV,(V)

1.0

v, - VOLTAGE (V)

Average Forward Current
VS. Temperature
10

V. Rating vs. Temperature

r_--.---,----r--~----r___,

V__

100%

IV'

\

V,

VRWM

\
\

Tc=--T.=----

\
\\,\

\~

25

50

75

100

125

-50 -25

150

TEMPERATURE ('C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926.Q404 • FAX (617) 924·1235

0

25

50

75

100

125

150 175

TEMPERATURE C'C)

2·144

PRINTED IN U.S.A.

DUAL POWER SCHOTTKY RECTIFIERS
16A Av, up to 50V

USD735C
USD740C
USD745C
USD750C

DESCRIPTION
The USD700C series of power Schottky rectifiers, in the industry standard TO·220
package, is specifically designed for operation in power switching circuits to
frequencies in excess of 100 KHz. The series combines Schottky rectifiers in one
convenient package; thus, simplifying installation, reducing heatsink requirements
and component parts count.

FEATURES
• Very Low Forward Voltage
• Reverse Transient Capability
• Economical Convenient Plastic Package
• Mechanically Rugged
• 50V Working Voltage @ Rated Tj1m. .1

ABSOLUTE MAXIMUM RATINGS (Per Diode Unless Otherwise Noted)
USD735C
USD740C
USD745C
USD750C
Working Peak Reverse Voltage, VRWM ...••.••.••..•..•..•..•...•......••••.• 35V ........... 4OV ........... 45V ........... 50V .. .
DC Blocking Voltage, VR .................... __ .............................. 35V ........... 40V ....... __ .. 45V ........... 50V ...
Peak Repetitive Surge Voltage, VRSM @ IRM ................................ ,42V ........... 48V ........... 54V ........... 6OV .. .
Average Rectified Forward Current@ Tc U5°C, 10 ' . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A ......................... ..
Non-repetitive Peak Surge Current (B.3ms), IFsM ................................................. 200A ......................... ..
Peak Reverse Transient Current, IRM .............................................................. lA __ ......................... .
Operating Junction Temperature, Tj ............................................................ 150°C ......................... .
Storage Temperature Range, T5Ig .......................................................... -55°C to +150°C .................... .
Thermal Resistance, Junction to Case, RSJC ..•.......•....•...•......•.••.••...••...•...•.•.•.. 2.BoC/W . ....................... .

=

'Full Wave Center·Tap; 10 IAV! 20KHz Square Wave

ELECTRICAL CHARACTERISTICS (TeASE = 25°C) (Per Diode)
SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

CHARACTERISTIC

iR

5

mA

VR VRWM
Pulse Width 400ps
Duty Cycle 1 percent

Maximum Instantaneous
Reverse Current

iR

50

mA

VR VRWM
Pulse Width 400ps
Duty Cycle 1 percent
Te 125°C

0.55
0.65

V

O,4B
0.60

V

Maximum Instantaneous
Forward Voltage

VF

C,

1000

pF

dvldt

1000

Vips

Capacitance
Voltage Rate of Change

CONDITIONS

=

=
=

=

=
=BA
=I6A
iF =BA l
iF = I6A
V = 5V
V =VRWM

=
=

iF
iF

= 125°C

Te

R
R

MECHANICAL SPECIFICATIONS
. TO·220AB
MILL'MEllal
DIM

MIN

MAl

A

14.23

c

....

15.87

3.56

10.66
':.112

•

•

~

Pin 1

1
Pin 2

It.
Pin 3

0
F

G

.0.51
l.SJl
2.29

H

1.14

.

3.733
2.19

"

0.61:

INC EO
MAl
MI'

0.""
0.380

0.625
0.'"

0.140

0.110

0 ....
0.139

0.045

.....

0.\41
0.110

0....
0.025

&

K

14.21

DOl!!
0.5..

Tab

I

1.14

1.77

0.045

0.010

N

'.83

s.n

0,190
0.100

0.2!0

S

2."
2."
1.14

l.04
2.U

T

5.&5

6.85

J

.
Q

0.38
12.10

I."

...00

"62
0.120

0.045

0.115
0.055

0.230

D.210

nn

SEMICONDUCTOR

~ PRODUCTS

4/B2

2-145

_UNITRODE

USD735C USD740C USD745C USD750C

Reverse Current
vs. Voltage

Forward Current
vs. Forward Voltage
100

100

-

MAXIMUM VF VS If vs T=

TYPICAL V, vs IF vs T =

...~
ffi

'"'"=>
u
'"~
'"~

' /V

;;:

/.' 7V

10

...5

I.&:

ffi

'"'"=>
u

CJ

.

\Z5' C

~.c

10

~

1!fI
1.0

'/.".c

w

V>

ffi
c:;

~r *7

.1

'"I
-" .01

,
.2

v, -

.
20

.6

.4

fR VS VA vs T =TYPICAll R VS VA vs T= - - -

MAXIMUM

,-

.001

1:1 I

0.1

'/.'j.v

~!)v

I§! ~<;

40

VOLTAGE (V)

Average Output Current
vs. Temperature

V. Rating vs. Temperature
100%

~v,

14

ffi

~
=>

with VRW'" == RATED
(T c reference)

~VAWM V,

v.....

,,

16

...~

120

% 01 V, (V)

1.0

.8

100

80

60

\

::+--\-\----1

\

~\

12

\

10

...=>
...=>
u

..

\\~\

Tc=--T.= - - - -

0

I

I\~

-"
O'---'---'---'--~--'--~

o

25

50
75
100
TEMPERATURE ('C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172

TEL (617) 926-0404 • FAX (617) 924·1235

125

-50 -25

150

25

50

75

100

125

ISO

175

TEMPERATURE C'C)

2-146

PRINTED IN U.S.A.

POWER SCHOTTKY RECTIFIERS

USD835
USD840
USD845
USD850

24A Pk, up to 50V

DESCRIPTION
The USD800 series of Schottky barrier
power rectifiers is ideally suited for
output rectifiers and catch diodes in
low voltage power supplies.

FEATURES
• Very Low Forward Voltage (O.45V max @ 12A)
• Reverse Transient Capability
• Economical Convenient Plastic Package
• Mechanically Rugged
• 50V Blocking Voltage @ Rated Tim..
ABSOLUTE MAXIMUM RATINGS

USD835
USD840
USD845
USD850
Working Peak Reverse Voltage, VRWM .•.••...••..••••....•••..•••.•••.••••••.. 35V ..•..•••••• 4OV •••••..••.• 45V •••••....... 50V
nc Blocking Voltage, VR •..•••••••••.•.••.••••..•..•...•••.•.•••.•••••••.•... 35V •.••.•••••• 40V .••••..••.. 45V ..•••.•..•. 50V
Pp.ak Repetitive Surge Voltage, VRSM @ IRM •..••.•. " .•..•.••..•••••••••••.•... 42V •••..••••.. 48V .•••...••.. 54V ..•.•... '" 60V
Average Rectified Forward Current @ Tc = 115°C, 10 ••••••••••••••••••••••••••.••••••••.••••••••••••• 12A •.••.••..•.•...•...•.•.
Peak Repetitive Forward Current (Rated VR,
.
Square Wave, 20KHz, 50% Duty Cycle, @ Tc = 115°C), IFRM . . . . . •• . . . ••• . •• . •. • . . . ••• •. •••• . .• . . •• 24A •...•..•..•••••••••••••
Non·repetitive Peak Surge Current (8.3mS), IFSM •...•.•.••.•...•.••••...••.•.•.•.•.•••.............. 200A ...•..••.•.•••.•••.•••
Peak Reverse Transient Current, IRM .••...•••.•.•..•••••....•..••..•••..•••••••..••.........••••..•. lA •.••.•••••••••••..•...
Operating Junction Temperature, TI .••••••••••••••••.•..•.••••••••••.•.•.••••••••••••••••.•.•.•.•.• 150"C ....•.•..•.•••..•.•.•.
Storage 1 emperature Range, Tst, •.•.•••••••••••••••••••••••••••.••••••••••••••.••••••••.•.•• -55°C to +150°C •..••••..••••••..
Thermal Resistance, Junction to Case, R.JC ••••••••••••••••••••••••••••••••••••••••••••••••••••••• 2.4°C/W .................... .

ELECTRICAL CHARACTERISTICS (T CASE =25°C)
CHARACTERISTIC

CONDITIONS

SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

iR

20

mA

VR= VRWM
Pulse Width = 400pS
Duty Cycle = 1 percent

Typical Instantaneous
Reverse Current

iR

50

mA

VR= VRWM
Pulse Width = 400pS
Duty Cycle = 1 percent
Tc = 125°C

0.59

V

iF = 12A

0.51

V

iF =12A
Tc = 125°C

VR= 5V

Maximum Instantaneous
Forward Voltage

VF

Capacitance
Voltage Rate of Change

C.

2000

pF

dv/dt

1000

VipS

VR= VRWM

MECHANICAL SPECIFICATIONS
USD800 SERIES

SU,TING
PLANE

.

rB-1

~[f

,- -

,",-.Ll.

I

',--'

..
~-

0--,
-.l

~.

MILLIMETERS

;~I

A·A

d.to

MIN

MAX

A
B
C

14.23
9.66
3.56
0.51
3.531
2.29

15.87
10.66
4.82
1.14
3.733
2.79
6.35
064
14.27
1.77
5.33

F
G
H
J

H

J~ II-< PIN 1. Cathode

o

DIM

D

...l

Ih

~

S~CT

I

.,

~"Q
...

2. Anode

Tab is connected

to Cathode.

0.38
12.70
1.14

N

4.83

Q
R
S

2.54
2.04
1.14
5.85

3.04
2.92
1.39

6.85

TO-220AC

INCHES
MIN
MAX
0.560 0.625
0.380 0.420
0.140 0.190
0.020 0,045
0.139 0.147
0.090 0.110
0.250
0.015
0.025
0.500 0.562
0.045 0070
0.190
0.100

0.210
0.120

O.OBO

0.115

0.045
0.230

0.055
0.270

nn

SEMICONDUCTOR

~ PRODUCTS

4/82

2-147

_UNITRODE

EI

USD835 USD840 USD845 USD850

Ty'pical Reverse Current

Typical Forward Current
vs. Forward Voltage

Voltage

VS.

100

100
T; - 125°C

50

)~I~OO/

.YY

10

.....-::: V

v:; ~

T; = 75.:sr-1
Tj= 25°C

I
1=

=.~CJ/ I

= =!SE!;

=
-

o. 1

V

O. 1

p

0.0 1

.~ ¥~

~ ....., ~I
"

/ III

0.0 0.1

0.2

0.3

o
0.4

0.5

0.6 0.7 O.B

0.9

10 20 30 40 50 60 70 80 90 100110 120 130
% 01 V, (V)

1.0

V, - VOLTAGE (V)

Output Current
Temperature

V, Rating

VS.

14

12

VS.

Temperature

100%

~r~n~:w~~t~~t~d/

'jj reference) V't O

--- ....c:: ~

\
\
\
............

50
75
100
TEMPERATURE (OC)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235 .

~~RWM V,

VRWM

\

,\
~\

=----

l\~

-50 -25

25

50

75

100

125

150

175

TEMPERATURE (OC)

~

125

\\~\'

Tc=--TA

~/Rated

'K

25

\

\

(Tc reference)

Free Air

~.V'

150

2-148

PRINTED IN U.S.A.

USD935
USD940
USD945
USD950

POWER SCHOTTKY RECTIFIERS
32A Pk, up to 50V

DESCRIPTION
The USD900 series of Schottky barrier
power rectifiers is ideally suited for
output rectifiers and catch diodes in
low voltage power supplies.

FEATURES
• Very Low Forward Voltage (0.5V max @ 16A)
• Reverse Transient Capability
• Economical Convenient Plastic Package
• Mechanically Rugged
• 50V Blocking Voltage @ Rated Tim..
ABSOLUTE MAXIMUM RATINGS

USD935
USD940
USD945
USD950
Working Peak Reverse Voltage, VRWM •.••.•••••.•.••.••..•••..••....••..•..•. 35V •....•••... 40V •••.••.••.. 45V ..••.•••••• 50V ••
DC Blocking Voltage, VR ••.•••.•.•.••..•••..•.•••••.••..••....•...•.•.••.... 35V ......•.••. 4OV •.••...•..• 45V .••..••.••. 50V .•
Peak Repetitive Surge Voltage, VRSM @ IRM •.••.••••.•••••..••..•.••.•..•.... 42V .....•....• 48V ..•....•..• 54V •••.••..••. 60V ..
Average Rectified Forward Current @ Te = 115·C, 10 ••••••••••••••••.••••••.••••••••••••••••••••.• 16A .•.••.••..•...••..••....
Peak Repetitive Forward Current (Rated VR,
.
Square Wave, 20KHz, 50% Duty Cycle, @ Te = 115·C), IFRM .•..•.••..••....••....•.••.•.••••••... 32A ••..•••..••..•...••...••
Non·repetitive Peak Surge Current (8.3mS), IFsM .......••..•••..•.•.••.•.•..••....•...•....••••..• 250A •••••.....•••.•••...•.•.
Peak Reverse Transient Current, IRM •...••••••..••.••......••..•..•..••.••.•.••.••...••....•••...• 2A ..••••...•.•.........•••.
Operating Junction Temperature, TI . .... ... . . . . . . . . . .. .. . ... . . . . . . . . .. . . . . . ... . . . . .... . . . . ... ... 150·C ..••..•..•.•..•...•....
Storage Temperature Range, Tst••••••••••••••••••••••••••••••••••••••.•••••••••••••••••••• -55·C to +150·C .•..••...•.••...•.
Thermal Resistance, Junction to Case, R Je .••..••••••.•.•..••..•.••.••.•........••..•...•.•...•• 2·C/W .....•..••...••.•••..••

ELECTRICAL CHARACTERISTICS (T CASE = 25·C)
SYMBOL

LIMIT

UNITS

Maximum Instantaneous
Reverse Current

CHARACTERISTIC

iR

20

mA

VR= VRWM
Pulse Width = 400pS
Duty Cycle = 1 percent

Typical Instantaneous
Reverse Current

iR

50

mA

VR= VRWM
Pulse Width = 400pS
Duty Cycle = 1 percent
Te = 125·C

0.6

V

iF = 16A

0.53

V

iF =16A
Te = 125·C
VR= 5V

Maximum Instantaneous
Forward Voltage·

Capacitance
Voltage Rate of Change

VF

Ct

2000

pF

dv/dt

1000

V/p.s

CONDITIONS

VR= VRWM

MECHANICAL SPECIFICATIONS
USD900 SERIES

SUTING

TO-220AC

PLANE

MILLIMETERS

INCHES

DIM

MIN

MAX

MIN

MAX

A

14.23
9.66
3.56
0.51
3.531
2.29

15.87
10.66
4.82
1.14
3.733
2.79
6.35

0.560
0.380
0.140
0.020
0.139
0.090

0.625
0.420
0.190
0.045
0.147

0.38
12.70
1.14
4.83
2.54
2.04
Ll4
5.85

0.64

0.015
0.500

B
C

0
F
G
H
J
K
L

N
Q
R

S
T

14.27
1.775.33
3.04
2.92
1.39
6.85

0.045

0.190
0.100
0.080
0.045
0.230

0.110

0.250
0.025
0.562
0.070
0.210
0.120
0.115
0.055
0.270

nn

l:::J
4/82

2-149

SEMICONOUCTOR
PRODUCTS

_UNITRODE

USD935 USD940 USD945 USD950

Typical Reverse Current
vs. Voltage

Typical Forward Current
vs. Forward Voltage
100

100
T,

50

lh V

=125°C

..... J=

10

;j ~

Tj = 75°C
1
Tj

I

l1J

",,-.

l\ro°C

I-"'"

=25°C

,/

o. 1

=.0 /11

~ =-ffJH u
=
-;; ?;;.,cv

=
-

0.0 1

1/

'''t

~,,,"

....

':"',

1 //

0.1
0.0 0.1

0.2

0.3

o

0.4 0.5 0.6 0.7
V, - VOLTAGE (V)

0.8

0.9

10 20 30 40 50 60 70 80 90 100110 120 130
% of VR (V)

1.0

Output Current
vs. Temperature

V. Rating vs. Temperature

v__

100%

~

'":::J

12

:

"'>

1Q

0 50%

~~

~

...'"o

:::J

0

0-

I

,
\\\

,\ \

~1

10

U
0-

.

Tc=--T.=----

~

~

'~

..15

.2

0
0

25

50
75
TEMPERATURE

100

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926-0404. FAX (617) 924-1235

125

-50 -25

150

25

50

75

TEMPERATURE

(OC)

2-150

VRWM

\, \\

..,~
">!'

14

5:
0-

V,

\V,

"z

16

100

125

150

175

(OC)

PRINTED IN U.S.A.

USD3030C
USD3040C
USD3045C

POWER SCHOTTKY RECTIFIERS
30A Av, Up to 45V
FEATURES

DESCRIPTION

• Economical Convenient
TO-3P Package
• Insulated Mounting Hole
• Can Be Clip Mounted
• Mechanically Rugged
• Low Thermal Resistance
• Extremely Low VF

The USD3030C Series, in the economical, convenient TO-3P package, is specifically
designed for operation in power switching circuits to frequencies in excess of 100kHz_
The very low forward voltage and low recovered charge translates to extremely high
efficiency making them particularly suited for low voltage switching type power supplies.

ABSOLUTE MAXIMUM RATINGS, either leg unless noted
USD3030C
USD3040C
USD3045C
Working Peak Inverse Voltage .............................. VRWM, VRRM ............. 30V ............. 40V ............. 45V ' "
D.C. Blocking Voltage.. .. .. .. .. .. .. . .. . .. .. .. .. .. .. .. .. .. .. .... VR .................. 30V ............. 40V ............. 45V .. .
Peak Repetitive Surge Voltage .............................. VRSM @ IRM ............. 36V ............. 48V ............. 54V .. .
Maximum Average D.C. Output Current
@ Tc 125°C, full wave operation (see curves) .............. IFIAVI ................................... 30A .................... .
Non-Repetitive Sinusoidal Surge Current, 8.3mS ...............• IFsM ...................................400A ................... .
Peak Reverse Transient Current ................................ IRM ................................... 2A .................... .
Thermal Resistance Junction to Case .......................... R/IJ-c ................................ 1.4°C/W .................. .
Thermal Resistance Junction to Case
both legs together, full wave ............................... R.J-c ............................... O.85°C/W ................. .
Thermal Resistance Junction to Ambient
'
either leg, or both legs together ............................. ReJ-A ................................. 40°C/W .................. .
Operating and Storage Temperature Range .................. Top, TSTG .......................... -55°C to +150°C ............. .

=

ELECTRICAL SPECIFICATIONS
Type

VRWM

USD3030C
USD3040C
USD3045C

30V
40V
45V

Maximum
Reverse Current (lR)
@VRWM

Maximum
Forward Voltage (VF)
TJ

= 25°C

TJ

.61 @ 15A
.75@30A

= 125°C

.55@ 15A
.71 @30A

TJ

=25°C

TJ

20mA

= 125°C
50mA

Maximum
Capacitance
CT
at VA = 5.0V

Voltage
Rate of
Change
(dv/dt)

2000pF

1000V/J.ls

MECHANICAL SPECIFICATIONS

IAi

~MI

TO-3P
FiF297 NOM.

.......

:=:
===

DIM.

f-

'PI~llpIL'
PIN2
&
TAB

3

A

B
C
D
E
F
G

H
J

~~~

-M
-N-

:J

K
L

M
N

INCHES
MIN. MAX.
.620
.640
.845
.825
.080
.060
.780
.800
.087
.102
.029
.Di9
.150
.170
.212
.222
.140
.144
.042
.052
.084
.074
.113
.123
.430 Nom.

nn

SEMICONDUCTOR

~ PRODUCTS

10/86

2-151

_UNITRODE

..

USD3030C

Average Output Current
vs Case Temperature

USD3040C

USD3045C

Peak Output· Current vs Case Temperature
(Either Leg)

40

ff-

g
r-

Full
Leg
See
Leg

Wave Operation with Each
at 30% Minimum Duty Factor.
Peak Current Curve for Either
Operating Individually.

30

~

\

'"'"::J

,

r-

~

\

U

r-

~ 20

r-

::J

30

U

r-

~

::J

r-

0

«
'""'

::J

1\

ffi

>
«

0

\

10

~

1
25

50

75

125

100

20

'"~
10

100

150

110

Typical Forward Current vs Forward Voltage

140

100

I-- I-j

,~

+125'C-

IO

150

+150"C
+125"C

f- I- +150'C

r-

130

Typical Reverse Current vs Voltage

100

g

120

Te. CASE TEMPERATURE - ('C)

Te. CASE TEMPERATURE - ('C)

r/

.A 'J r.4

~

:<

~

10

I'"""'

+100'C

-5
I

-55'C

r-

~

'"'"
'"3:«'"
e'"
::J
U

rl

I

J II

I

'"'"

+25 D C

::J

1--+25'C

U

"''"
ffi

I

L'

0.1

~

.,;

.!E

i.--"

0.01

0.1

I

I

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

10

20 30 40

VF. VOLTAGE - (V)

50 60 70 80 90 100 110 120
%OFVR-(V)

Thermal Impedance vs Pulse Width
(Each Leg)
2.0

3'

~

I-

'1.0

",,,,,,,

0.5

V

"'uz

«

'":;;:~

10-'1-'"
0.2

",'"

0.1

;;!

"ffi

.05

:J:

r-

~

/

I

.02
.01
.01.02 .05.1.2

tp

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926·0404. FAX (617) 924·1235

.5 1 2
-

5 10 20 50100200

1000

PULSE WIDTH (mS)

2-152

PRINTED IN U.S

USD3030S
USD3040S
USD3045S

POWER SCHOTTKY RECTIFIERS
60A Pk, Up to 45V
FEATURES

DESCRIPTION

• Economical Convenient
TO-3P Package
• Insulated Mounting Hole
• Can Be Clip Mounted
• Mechanically Rugged
• Low Thermal Resistance
• Extremely Low VF

The USD3030S Series, in the economical, convenient ID-3P package, is specifically
designed for operation in power switching circuits to frequencies in excess of 100kHz.
The very low forward voltage and low recovered charge translates to extremely high
efficiency making them particularly suited for low voltage switching type power supplies.

ABSOLUTE MAXIMUM RATINGS

USD3030S

USD3040S

USD30455

Working Peak Reverse Voltage. _...... _........................ VRWM ............ _.......... 30V ........... 40V ........... 45V .. .
D.C. Blocking Voltage . _..•........•........... _................ VR .............. _......... 30V ........... 40V ........... 45V .. .
Peak Repetitive Surge Voltage .. _.............. _........ _... VRSM @ IRM. _.................. 36V ........... 48V ... _....... 54V _..
Maximum Average D.C. Output Current @ Te = 115°C .......... IFIAVI .. _.... _... ___ .................. _..... 30A ................. .
Non-Repetitive Sinusoidal Surge Current, 8.3mS ................ IFsM ..................................... 450A ........ _...... _.
Peak Reverse Transient Current _... _.. __ . _..................... IRM ................................ _...... 2A ................ _.
Thermal Resistance Junction to Case .. _.. _..... _.............. R9J-c ___ ........ _........................ 1.5°C/W.. _........ _.. _.
Thermal Resistance Junction to Ambient ........... _.......... R9J-A ................. _........ _. __ ...... 40°C/W . .............. .
Operating and Storage Temperature Range. _.. _..... _........ Top, TSTG .. , ...... _....... _............ -55°C to + 150°C....... _. _..

ELECTRICAL SPECIFICATIONS
Type

VRWM

USD3030S
USD3040S
USD3045S

30V
40V
45V

Maximum
Reverse Current (lR)
@VRWM

Maximum
Forward Voltage (VF)
TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = 125°C

Maximum
Capacitance
CT
at VR = 5.0V

.75@30A
.93@60A

.70@30A
.85@60A

20mA

50mA

2000pF

Voltage
Rate of
Change
(dv/dt)
1000V/jJs

MECHANICAL SPECIFICATIONS
ID-3P

rsM ~

,AI

11F~97NOM.

..--

:::
="

PIN 1
CATHODE 1
PIN2
ANODE

DIM.
'A
B

C
D
E
F
G
H

-N-

J

J
K
L
N

INCHES
MIN. MAX.
.620
.640
.845
.825
.060
.080
.780
.800
.102
.087
.019
.029
.170
.150
.222
.212
.140
.144
.042
.052
.084
.074
.430 Nom.

1. Mounting surface common to cathode

10/86

2-153

-

[~

SEMICONDUCTOR
PRODUCTS

UNITRDDE

USD3030S USD3040S USD3045S

Average Output Current
vs Case Temperature

Peak Output Current vs Case Temperature
100

40

g

,..

z
....
0:

30

,..

\

150:

0:

::>
c..>

0:

,..

,..::>::>
0-

::>

,..c..>

\

20

,..::>~

\

0

....

:<

40

o

'"«ffi

'"

«
~

10

VAWM :: Rated

1

\

~
.;;

30

VRWM :::

lOY Max. -

-

\
OL-___ L_ _ _ _

25

50

75

125

100

ISO

140

130

100

f- -- --

,

+150 a C

~

+125°C-

;(

5

-55°C

+15Q~C

-

10

//

+125°C
+lOOoe

,..I

~

L

~
0:

::>

u

'-

h

Ii!«

'I

"fZ
0:

+25°C

::>
c..>

+25°C

iii'"

I

"

0,1

~

0:

.of

.!!

0.1

~

ISO

Typical Reverse Current vs Voltage

Typical Forward Current vs Forward Voltage

10

L-___ L_ _ _ _

____

Te, CASE TEMPERAT.URE - (OC)

100

g

~

120

110

100

Te. CASE TEMPERATURE _ (Oe)

,..

-

.....

0.01

1/
0,0 0,1 0.2 0.3 0.4 0.5 0,6 0,7 0,8 0,9 1.0 l.l 1.2

10

20 30 40

VF. VOLTAGE - (V)

50 60 70 80 90 100 110 120
% OF VR - (V)

Thermal Impedance vs Pulse Width
2.0

~

e
....c..>

0.5

z
«

0,2

~
~

0,1

0

-"
«

,'"

1.0

'ffi"

,05

~

.02

~ ....

..... 1---

,;'

/

/
/

~

,01
,01.02 ,05,1 ,2

,5 1 2

5 10 20 50100200 1000

Ip - PULSE WIDTH (mS)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

2-154

PRINTED IN U.S.A.

USD4530C
USD4540C
USD4545C

POWER SCHOTTKY RECTIFIERS
45A Av, Up to 45V
FEATURES

DESCRIPTION

• Economical Convenient
TO-3P Package
• Insulated Mounting Hole
• Can Be Clip Mounted
• Mechanically Rugged
• Low Thermal Resistance
• Extremely Low VF

The USD4530C Series, in the economical, convenient TO-3P package, is specifically
designed for operation in power switching circuits to fre·quencies in excess of 100kHz.
The very low forward voltage and low recovered charge translates to extremely high
efficiency making them particularly suited for low voltage switching type power supplies.

ABSOLUTE MAXIMUM RATINGS, either leg unless noted
USD4530C
USD4540C
USD454SC
Working Peak Inverse Voltage ............•..................VRWM, VRRM .......•..... 30V ....•......... 40V ........•.... 45V .. .
D.C. Blocking Voltage ........................................... VR .................. 30V .............. 40V ............. 45V .. .
Peak Repetitive Surge Voltage .............................. VRSM @ IRM ............. 36V .............. 48V ............. 54V .. .
Maximum Average D.C. Output Current
@ Tc = 125°C, full wave operation (see curves) .......•...... IFIAVI .....••...•........•.............. 45A .................... .
Non·Repetitive Sinusoidal Surge Current, 8.3mS ...............• IFsM .................................. .450A .................... .
Peak Reverse Transient Current ..........................•.....• IRM ................................... 2A ..................... .
Thermal Resistance Junction to Case ........................... RoJ-c ................................ l.O°C/W .................. .
Thermal Resistance Junction to Case;
both legs together, full wave .......................•........ RoJ-c ............................... . O.7"C/W .................. .
Thermal Resistance Junction to Ambient
either leg, or both legs together .........•.........•.......•. RoJ-A ................................ 40°C/W .................. .
Operating and Storage Temperature Range ................... Top, TsTG· .......................... -55°C to +150°C .............. .

ELECTRICAL SPECIFICATIONS
Type

VRWM

USD4530C
USD4540C
USD4545C

30V
40V
45V

Maximum
Reverse Current (IR)
@VRWM

Maximum
Forward Voltage (VF)
TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = 125°C

Maximum
Capacitance
CT
at VR = 5.0V

.63@23A
.73@45A

.60@23A
.70@45A

20mA

75mA

4000pF

Voltage
Rate of
Change
(dv/dt)

1000V//ls

MECHANICAL SPECIFICATIONS
TO-3P

I~I

fL~
B

J

[

FiF~97NOM.

.......

~

I=-

DIM.
•

PI~ Ilpl~'3'
PIN2
&

3

TAB

A

B
C
D
E
F

G
H
J
K

~j~

-M

I---N-

:J

L
M
N

INCHES
MIN. MAX.
.620
.640
.825
.845
.060
.080
.780
.800
.087
.102
.019
.029
.150
.170
.212
.222
.140
.144
.042
.052
.074
.084
.113
.123
.430 Nom.

nn

SEMICONDUCTOR

~ PRODUCTS

10/86

2-155

_UNITRDDE

USD4530C

Average Output Current
vs Case Temperature
60

g

50

-

Full
Leg
See
Leg

USD4540C

USD4545C

Peak Output Current vs Case Temperature
(Either leg)

Wave Operation with Each
at 30% Minimum Duty Factor.
Peak Current Curve for Either
Operating Individually.

....
z

'"
0:
0:

40

\
\

:::l
U

....
:::l
"....
:::l

3D

a

'"'-'
«

20

>
«
~

10

ffi

J;;

\

\

o
o

25

50

75

100

125

100

150

110

120

130

140

150

Te. CASE TEMPERATURE - ("C)

Te. CASE TEMPERATURE _ (OC)

Typical Forward Current vs Forward Voltage

Typical Reverse Current vs Voltage

1000

1000

,.nO~

+-150°C

g
....

b... ~

100 ~ ~ +125°C

....
~

<:

5
I
....z

150:
0:

~
0:

e

'(f

10

0:
0:

55°C_ I -

/

"

/11

:::l
U

+25°C

~12~OC

-

10

'"

0:

:::l
U

100

>IOO°C.

..A

'"'"ffi

+25°C

G;

0:

.!f

IE

"""

0.1

I

I

I

I

/, II I

0.01

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

10

20 30 40

VF. VOLTAGE - (V)

Thermal Impedance vs Pulse Width
(Each leg)

~

E
"'u

.5

"'"-

.2

z
«
c
~

..J

.1

0::

.05

«
::;;

..."'
l:

I

50 60 70 80 90 100 110120
%OFVR- (V)

.02

-l/'

V

V ......

vV'
/'

V

g .01
N

.01.02 .05.1 .2

.5 1 2

5 10 20 50 100 200

1000

t. - PULSE WIDTH (mS)

UNITRODE • SEMICONOUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

2·156

PRINTED IN U.S.A.

USD4530S
USD4540S
USD4545S

POWER SCHOTTKY RECTIFIERS
gOA Pk, Up to 45V
FEATURES

DESCRIPTION

• Economical Convenient
TO·3P Package
• Insulated Mounting Hole
• Can Be Clip Mounted
• Mechanically Rugged
• Low Thermal Resistance
• Extremely Low VF

The USD4530S Series, in the economical, convenient TO·3P package, is specifically
designed for operation in power switching circuits to frequencies in excess of 100kHz.
The very low forward voltage and low recovered charge translates to extremely high
efficiency making them particularly suited for low voltage switching type power supplies.

ABSOLUTE MAXIMUM RATINGS

USD4540S

USD4530S.

USD4545S

Working Peak Reverse Voltage ................................ VRWM ....................... . 30V .......... . 40V .......... 45V .. .
D.C. Blocking Voltage .......................................... VR ......................... 30V ........... 40V .......... 45V .. .
Peak Repetitive Surge Voltage .............................. VRSM @ IRM ..................... 36V .......... . 48V .......... 54V .. .
Maximum Average D.C. Output Current @ Tc 115°C ......... IFIAV) ...................................... .45A ................. .
Non·Repetitive Sinusoidal Surge Current, 8.3mS ................ IFsM....................................... 450A ............... ..
Peak Reverse Transient Current ................................ IRM ........................................ 2A ................. ..
Thermal Resistance Junction to Case .......................... ReJ-c .....................................8°C/W ............... .
Thermal Resistance Junction to Ambient ..................... ReJ-A .................................... 40°C/W ............... .
Operating and Storage Temperature Range .................. Top, TSTG ...•.......................... -55°C to +150°C .......... ..

=

ELECTRICAL SPECIFICATIONS
Type

VRWM

USD4530S
USD4540S
USD4545S

30V
40V
45V

Maximum
Reverse Current (lR)
@VRWM

Maximum
Forward Voltage (VF)
TJ

=25°C

TJ

.73@45A
l.OO@90A

=125°C

.70@45A
.95@90A

TJ

=25°C

TJ

20mA

= 125°C
75mA

Maximum
Capacitance
Cr
at VA = 5.0V

Voltage
Rate of
. Change
(dv/dt)

4000pF

lOOOV/ps

MECHANICAL SPECIFICATIONS
TO-3P

I~I

fLbt ~

~,:

~I"
K

Fil=i97 NOM.

.......

~ r-~~OOEI
f=
PIN2
ANODE

2

DIM.
A
B

C
D
E
F

I

=-N-

j

G
H

J
K
L
N

INCHES
MIN. MAX.
.620
.640
.845
.825
.060
.080
.780
.800
.102
.087
.019
.029
.150
.170
.212
.222
.140
.144
.042
.052
.074
.084
.430 Nom.

1. Mounting surface common to cathode

nn

SEMICONOUCTOR

~ PROOUCTS

10/86

2-157

_UNITRDDE

l1li

USD4530S

Average Output Current
vs Case Temperature

USD4540S

USD4545S

Peak Output Current vs Case Temperature

60

g 50
I
I-

~

0:
0:

\

40

:J
<.)

I-

!\

:J

"- 3D

I-

.'"

W

..g
ffi

,

\

:J

0

20

1\

>

.

.,.

,

1\

10

25

50

75

100

125

150

Te. CASE TEMPERATURE _ (OC)

Te. CASE TEMPERATURE _ (OC)

Typical Forward Current vs Forward Voltage.

Typical Reverse Current vs Voltage

1000

1000

100

g
I-

+1500~"

100

~

F

~

~ JIIIII'

.5

F+125°C

I-

~

0:
0:

:J
<.)

0:
0:

~
Jf

55°C

'le:

'"
;l:

'f II V

«

10

10

0:
0:

l - t-

1+l5pOC

-

:?

:J

<.)

12~

100°C

'«

250r----r~--.-~-.---r,_--_.

150

----

120

\ \

E;=-·
>-z

\

..

~

UJUJ

~~

\ \

80

"'u

;::iCl
"--

>-

i'5

i'5



20

fi

10

g§

::>

u

u

«

r--



;0

en
0
w

u:

""

IIII

i"&

-..;::

VI

~t;:
t'

60

~~

50

>-13
U·

40

o~

ZO
W
-J:

N

30

!:?o
... 0

20

...0
W@

o

~ulse

IK
2 3 4 6 810K
lOOK
1M
FREQUENCY (H,) -HALF WAVE RESISTIVE LOAD NO FILTER

Reverse Pulse Power vs Pulse Duration

Duration
100,000

~A.LL

~
1,000

........

for ~~I~e_curr~!!.,;ptr.:

1(8.3t:~ ~~eSquar~ ,,~~!~~'e

Jill!

~ 10,000

I

a:

W

a:
a:
u
W
en

W

~
~

::>
...J

'" "

10

1,000

10
100
CYCLES AT 60 Hz HALF SINE WAVE

Forward Pulse Current vs

....

70

... <

10,000

Z

80

0"

20

*

90

e:>
::>w

r----:::::: -:::'J..

D.

-ALL SERIES

.... ...J

::>0

Turret 1/2" centers
Printed Circuit

U
W

...0

-....

tLlsERIES

~Jr~~~ I" c~nte~s

40

en

Efficiency vs Frequency at Rated Current (Sine Wave)
lOa

1,000

W
III

lao

...J

::>

::>

D.

D.

.Ips

lIts

lOps

lOOjJ.s

1ms

lOms

PULSE DURATION (SECONDS)
UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

2-162

100

lOOns

IpS

lOps
lOOps
1ms
PULSE DURATION (SECONDS)

IOms

PRINTED IN U.S.A.

UT236-UT347 UT249-UT363 UT2S1-UT364 UT261-UT268
Maximum Current
vs lead Temperature
1 AMP SERIES

L

~

....z

0:
0:

"::;:
0

= v, ..

"'-l

2.5

!:l

2

®

L=W' "'"

~
r--.
25

50
T, -

'" ~

1.5

75

100

u
0

~

w

u:

;::

u
w

~

W

OJ

.............

"'"
0:

1

W

~

>

~

...........

.2

~~

.5

~

125

150
175
LEAD TEMPERATURE I'C)

25

50
T, -

Typical Forward Current
vs Forward Voltage

o

75

100
125
150
175
LEAD TEMPERATURE I'C)

Typical Forward Current
vs Forward Voltage

10

10

r/v;

2 AMP SERIES

"'" ."'"'-"~

~

'"I

.5

~

"'-

~J/4"

0:

n

.............

;-..........

:J

-'II"'

2 AMP SERIES

= Vs"

"t
~= 'I'"'

w

L

..

Maximum Current
vs lead Temperature

1 AMP SERIES

VVr;

V
....z

w

k"k:: 1:2

I1IIII

~ .5

.2

~ .5

~o oCJ CJ U

~8io5?_

~ ,1

:;; +-

:J

U.05

I

....Z

r-

II

.01
.005

II

.002

II

.001
.2

II

:;;JI

:J

u .05

I
_".02

1/

I1I1

.01
.005

// I

il

.002

II

1/

.001

.4

.6

V, -

VOLTAGE (V)

.8

1

1.2

.2

1.4

VV

I/'''~'
uu
~~~~

~ .1

I

1///

."..02

1/1/

.2

w

VI/V

r-

I1IIII
IL

.4

.6.8

V, -

VOLTAGE (V)

1.2

1.4

Typical leakage Current vs. PIV
ALL SERIES

.001
.002

;(

.3

....z

u

VI

.5

w

50'C

.02
.05
.1
.2

OJ

0:
0:

:J

--

.005
.01

--~'C
i
I

r--

0:
W

>
W

./

0:

---+75'C

I

10
20

I

=-t;5'C

',-

50
100
150

100

50
% OF PIV

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

2-163

PRINTED IN U.S.A.

UT2005-UT2060
UT3005-UT3060
UT4005-UT4060

RECTIFIERS
Standard Recovery, 2 Amp to 4 Amp

FEATURES

DESCRIPTION

•
•
•
•
•

High average power and surge capability
make these series of devices attractive
in many high-rei applications.

Continuous Rating:to 4A
Controlled Avalanche
Surge Rating:tolOOA
PIV: to 600 V
Miniature Package

All Unitrode rectifiers have a sleeve of
pure hard glass fused to the silicon junction. Since the silicon sees only this glass,
electrical characteristics are permanently
stable. This voidless, monolithic package
is totally unaffected by the most severe
moisture or temperature testing.

ABSOLUTE MAXIMUM RATINGS

Peak Inverse Voltage

2 Amp
Series

3Amp
Series

4Amp
Series

50V
100V
200V
400V
600V

UT2005
UT2010
UT2020
UT2040
UT2060

UT3005
UT3010
UT3020
UT3040
UT3060

UT4005
UT4010
UT4020
UT4040
UT4060

Maximum Average D.C. Output Current
@ TA = 25'C .
@ TA = IOO'C .
Non-Repetitive Sinusoidal
Surge Current (B.3ms) ..
Operating Temperature Range
Storage Temperature Range .
Thermal Resistance .

2AMP

3AMP

4 AMP

SERIES

SERIES

SERIES

. 2.0A... .. .. .... ......... .... ........ 3.0A... .
. I.OA... .
.............. 1.5A
............. 60A

....... 4.0A
............... 2.0A

.................... IOOA
.. BOA.
.... -195'C to +175'C ...
........... -195'C to +200'C ..
.......... See lead temperature derating curve ...

MECHANICAL SPECIFICATIONS
UT2005-UT2060 UT3005-UT3060 UT4005-UT4060

r

BAND INDICATES

CATHODE END

.175 TYP.

r:

4.4mm

=::l]

1

~~~~8~~·

,~J

=

.145 MAX
36Bmm

t

====rrL

·~2~~·

BODY B

.040,001

1.02mm+.03

.115 TVP
2.9mm

Part Identification: Orange band indicates "UT." Part
number printed on body_
Polarity: Denoted by orange band.

Weight: 0.75 grams, typical.

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONDUCTOR

~ PRODUCTS

2-164

_UNITRODE

UT2005-UT2060

UT300S-UT3060

UT400S-UT4060

ELECTRICAL SPECIFICATIONS (at 2S'C unless noted)

SOV
lOOV
200V
400V
600V

lV@3A

S}LA

lOO}LA

UT300S
UT3010
UT3020
UT3040
UT3060

SOV
lOOV
200V
400V
600V

lV@2A

S}LA

lOO}LA

UT200S
UT2010
UT2020
UT2040
UT2060

SOV
lOOV
200V
400V
600V

lV@lA

S}LA

lOO}LA

=~"
z
~
:;! 3
""o ~=f"

Maximum Current
Y5 Lead Temperature
3.5

2 AMP SERIES

2.5~

0:

0:

~

>= 2

:Ii

""

~4

t--..

~ 1

.2

50

75

1.5

""""1'-"'"
"-

T, -

:;!5

~L

®

'"
.:

--<

l;lJ

100

1

"
Uj
0

150

0:

~

4

"

""{

L-~'~
t'-4
J"-.,.

3

'\.

""'" ~
~

>

I

z

L _ "'" "-

"'"ffi2

.

~~
~

125

>=

1

1'\

175

SO
T[ -

75

100

6

'"
0:
0:

"''" ""0
®

5

--<

4

.:'"
>=

" "'"

t:

0

'\

125

150

0:

"'"'"

\.L - Yo"
\l
I'\.

'"I

h.

"i-...!:.!"'4"

~
....
z

=

YS

Square Pulse Current VS~
Duration for Non-Repetitive Pulse

VI

"z;::

.
a:

(8.3 msec sine wave equivalent
to 3 ms square w~ve)

80

"'

"a:

1.000

:::J

b" hl

l"\.~

175

'1
50

100

125

150

175

LEAD TEMPERATURE (OC)

60

ALL SERIES

11111
~

'" ~t:::

0

"'u:
"'0.

f'--..

100

75

1""- f'.

VI

a:
:::J
u

"'

~LJ.

J"'-.,

Allowable Forward Surge ys Number of Cycles

Pulse Duration

"'
a:

.J

~

LEAO TEMPERATURE (Oe)

100
LL SERIES

1'\

"'-

-

TL -

Forward Pulse Current

'\

~
i"'" I"--. -"'" 1'\\

2

25

10.000

• AMP SERIES

R~~)I,\

0:

'">

""L'\.\~
25

"0

:Ii

'Ii

-......, ""-I\.

.2

LEAD TEMPERATURE (Ge)

i

.

'"

""04

"''"

2

'"I
25

L ;::;. l,iI"

0:

Maximum CUrrent
YS Lead Temperatur.

3 AMP SERIES

~

....
z

L-~ ,""-

'".:

I

_6

L

0:

"'"
"'"'"

100'C

PIV

UT400S
UT4010
UT4020
UT4040
UT4060

Maximum CUrrent

~

2S'C

Type

YS Lead Temperatur.

.

Maximum Leakage
Current @ PIV

Maximum Forward
Voltage Drop

U

:::J

VI

0.

"-

40

I I

~Jr~~~ I" celnte~s
TUrret Ill" centers
Printed Circuit

I:::::::::::

~ -'::'1.

20

0

#
\0
.1p.s

b.s

lOp,s'

100#5

Ims

lOms

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-123S

10

100

1.000

CYCLES AT 60 Hz HALF SINE WAVE

PULSE DURATION (SECONDS]

2-165

PRINTED IN U.S.A.

UT2005-UT2060

Typical Forward Current
vs Forward Voltage
10

10

1// 'II

'"~
::>


;';'~II

.01

II

.005

.001

I
.2

I

/
.4
V, -

.2

'"::>'"'"

.5

--

--



II

/ I
I

"' .02

....

'"'"

I

10
20
50
100
200
500
1,000

II

.6
.8
1
VOLTAGE (V)

1.2

ISO

1.4

./

:sooC

.05 .
.1

Z

{J
~8w,5:

I

.002

;(

.:,

fr

~

ALL SERIES

.01
.02

II I 'III

.5

I

I II

Typical Reverse Current vs PIV

·4 AMP SERIES

/ /11
$
....

il

I

.2.4.6.811.21.4
. V, - VOLTAGE (V)

Typical Forward Current
vs Forward Voltage
10

/

II

.002
1.2

{J {J

II

.005

.6
.8
1
VOLTAGE (V)

~

;.~ :;:8 It"11/5?

~.05
I

I

I

.2

~ .. 1

.1

/ I
II I

I

/1/ 1I

.5

w

{J

i- i- i- I

_~.02

.002

$
....
Z

ilt

.1

'/

3 AMP SERIES

/

$
....Z

UT4005-UT4060

Typical Forward Current
vs Forward Voltage

VVv:

Z AMP SERIES

Un005-Un060

./
25°C

/'
75°C

/'
125°C

100
50
% OF PIV

Reverse.Pulse Power vs Pulse Duration
100,000

~

'"'0~"

"w
en

10,000

1;000 .

..J

::>

"-

100

10
lOOns

bs

lOllS

lOOps

Ims

IOms

PULSE DURATION (SECONDS)

UNITRDDE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL; (617) 926·0404· FAX (617) 924·1235

2-166

PRINTED IN U.S.A.

RECTIFIERS

UT5105-UT5160
UT6105-UT6160
UT8105-UT8160
UT5105HR2-UT5160HR2
UT6105HR2-UT6160HR2
UT8105HR2-UT8160HR2

Standard Recovery, 7.5 Amp to 12 Amp

FEATURES
• Rating: 12A
• Controlled Avalanche
• Miniature Package
• Surge Rating: 200A

DESCRIPTION
These series of high current rectifiers
offers opportunity for size and weight
reduction in high power supplies.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

12 Amp
Series

9 Amp
Series

7.5 Amp
Series

50V
lOOV
200V
400V
600V

UT8105/8105HR2
UT8110/811OHR2
UT8120/8120HR2
UT8140/Bl40HR2
UTB160/B160HR2

UT6105/6105HR2
UT6110/6110HR2
UT6120/6120HR2
UT6140/6140HR2
UT6160/6160HR2

UT5105/5105HR2
UT5110/5110HR2
UT5120/5120HR2
UT5140/5140HR2
UT5160/5160HR2

Maximum Average D.C. Output Current

@ Tc = 100'C .....
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
Operating and Storage Temperature Range ........................... .
Thermal Resistance, Junction to Case .
Current Derating ............................................... .

12AMP

9AMP

SERIES

SERIES

12.0A... .....

9.0A.......... .

7.5 AMP
SERIES

..... 7.5A

... 200A.....

.. ........ 175A.......... .
150A
.. .........-65'C to +175'C
.. ...... 7.5'C/Watt .. .
... See current vs. case temperature curve

MECHANICAL SPECIFICATIONS

UT5105-UT5160
UT5105HR2-UT5160HR2

UT6105-UT6160
UT6105HR2-UT6160HR2
.187" MAX.

.005 MAX.

Radius

.112 MAX. \

.045" TYP •
(O.llmm)

(4.75mm~

r

.460" MAX.

-',

(ll.6Bm";·j---j

~

tOShOU~d"
~
--'--

T/

BODY C - Stild:Mount

.187" HEX.

(4.7~~m)

l@)

1//

-=-=;-_-~;:rA.
=r-h;
;

-..

.230" (S.84rnml

#4-40

I
I

.UT8105-UT8160
UT8105HR2-UT8160HR2

.

x .250" (6.34mml LONG THREAD

.120" TYP.
(3.0Smm)

Part Identification: Numerals and polarity letter indicate UTR type number, e.g., UTR 44.05 .
. Polarity: Cathode to Stud is standard. Reverse" polarity denoted by "R" suffix.
Finish: Metal parts gold plated per MIL-G-45204, Type II.
Weight: 1.5 grams, typical.
Also available with insulated stud. Reference Design Note 17.
Installation
Maximum unlubricated stud torque: 28 inch-ounces.
Mounting hardware supplied.
Do not use a screwdriver in the turret slot for installation purposes, or damage may result.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-167

PRINTED IN U.S.A.

.'.111

UT6105-UT6160
UT6105HR2-UT6160HR2

UT5105-UT5160
UT5105HR2-UT5160HR2

UT8105-UTB160
UT8105HR2-UT8160HR2

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Peak Inverse
Voltage

Type

UT8105/8105HR2
UT8110/8110HR2
UT8120/B120HR2
UT8140/8140HR2
UT8160/Bl60HR2

50V
100V
200V
400V
600V
50V
lOOV
200V
400V
GOOV
50V
IOOV
200V
400V
600V

UT6105/6105HR2
UT6110/6110HR2
UT6120/6120HR2
UT6140/6140HR2
UT6160/6160HR2
UTSlOS/SlOSHR2
UTSllO/5110HR2
UT5120/5120HR2
UT5140/5140HR2
UT5160/5160HR2

Max. Reverse
Current at PIV

Maximum Forward
Voltage

25'C

l00'C

1V@8A

1OI'A

300i

"
0

100

0:

so

1,000
500
200

100

~

so

~

20
10 L--.JL..JLJ-L.LJ_L
a
.6 .8
1 1.2
VF Volts

0:

20 I-++-+-++-+I-+-.-j--I
10 L--.JL..JL-LL..L..L-L-...L-I
o .2 .4 .6 ,8 1 1.2
Vf Volts

Typical ForwardVoltage vs Forward Current

Typical P:I,V. vs Reverse Current

r--

10,000 C'::':co:::o::--,-,rnrr-,---,

:<
.§
....
zUJ

5,000
2,000
1,000

t--t--t-+tJ'-I1If-c---+--I
t--t--tl'--fr-f-lf-c---+--I

0:
0:

500

"o

200 t--t-.r~~t-+-+--I

=>

:<
.:;
....Z

r'T-=:::r---t---T1'Hf-+-t

0:

~
0:

~

UJ
0:
0:

=>

"

100

50
20
10

I-++-+-+f--H--I---j--I

o

.2

.4

.6 .8
1
Vf Volts

1.2

c

.5
1

+f5'C

5
10

~'C

UJ
Ul
0:
UJ

100

UJ
0:

1000

:>
L--.JL..JL-LL.LJ~L-_.L.-I

.05
.1

so
SOO

.J--

U

ISO

1~5'C

100

50

% of P.I.V.

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices specified UT5105HR2 through UT8160HR2.
SCREEN

MIL-STI).750
METHOD

CONDITIONS

1. High Temperature

1032

24 Hours@ 17SOC

2. Temperature Cycling

10S1

C, 20 Cycles, -65 to +17S"C. No dwell required.
@ 25"C, t ;;. 10 min. @ extremes.

3. Hermetic Seal
a. Gross Leak

1071

E,ZYGLO

4. High Temperature Reverse Bias (HTRB)
5. Interim Electrical Parameters
6. Power Burn-in
7. Final Electrical Parameters
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 9Z6.Q404 • FAX (617) 924·1235

1038
GO/NO GO
1039
GO/NO GO

N68

A, TA = 150OC, VR = 80% of rating, 48 hours
VF and IR @ 250C
B, TA = 2S"C, 96 Hours, 10 adjusted 150"C,
<;;lj <;; 1750C
VF + IR @ 2SOC
PDA = 10% (Final Electricals)

PRINTED IN U.S.A.

UT5105-UT5160
UT5105HR2-UT5160HR2

Current Rating vs Case Temperature
100

I

i L

T

1\

I I
I
I

~-

.S
~

50

.~i
++-+

~

-r--

:

u

~

~

o

~H

-

100

200

Temperature

lK

~

I

.

lEI

~

I

i\

-

UT8105-UT8160
UT8105HR2-UT8160HR2

Forward Pulse Current vs_ Pulse Duration

I

o

UT6105-UT6160
UT6105HR2-UT6160HR2

100

11111111
ImS

~C

lOmS

Pulse DUration (Seconds)

Reverse Pulse Power vs. Pulse Duration
lOOK

~

10K

~
~

lK

0

n.
~

:;
n.

100
10
1.S

.It./S

lOpS
100,l.lS
ImS
Pulse DUration (Seconds)

IOmS

MECHANICAL SPECIFICATIONS
Style W

Gold Plated
Nickel Ribbon

Beryllia
Full thread to within

(2

Insulating
Disc

Places)

I.-

012" TYP. ...j

125' TVP

.13~~:A~ ~~:Ulder~1 r- 1i:O===d===3h~1
I 3l8mm
3SlmmtoRADfS

6iNo"m~~;~~~" T

Copper. Gold Plated
.005" MAX. RAO.

L~

~I

1_

~

-

I

385 MAX ~
9 78mm

.13mm

f

~:~O:~MAX G \

1IIIIHIIIIItI-t-+-lIH-

10

~

l~

'\

250" HEX

'y 635mm

750' MIN
19.05mm

Dimensions in inches.

Style V
.062" DIA.
1.57mm

6·32, .240"'.010"
6.10mm±.25mm
Copper, Gold Plated

.005" MAX. RAD .
.13mm

Dimensions in inches.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

2-169

PRINTED IN U.S.A.

RECTIFIERS

UTRIO·UTR60
UTROl·UTR61
UTR02·UTR62

Fast Recovery, 0.5 Amp to 2 Amp
FEATURES

DESCRIPTION

•
•
•
•
•
•

These miniature fast recovery rectifiers
permit operation at full frequencies as
high as 40kHz square wave. They have
the unique Unitrode Fused in Glass con·
struction.

Continuous Rating: to 2A
Controlled Avalanche
Surge Rating: to 25A
Fast Recovery 40kHz Operation
PIV: to 600V
Miniature Package

ABSOLUTE MAXIMUM RATINGS

Peak Inverse Voltage

SOV
IOOV
200V
300V
400V
SOOV
600V

v. Amp

1 Amp

Series

Series

Series

UTRlO
UTR20
UTR30
UTR40
UTR50
UTR60

UTROI
UTRll
UTR21
UTR31
UTR41
UTRSI
UTR61

UTR02
UTR12
UTR22
UTR32
UTR42
UTR52
UTR62

V. AMP
SERIES

Maximum Average D.C. Output Current

@ TA
@ TA

=

O.SA ...
..... O.2SA

2S'C
100'C ....

=

Non-Repetitive Sinusoidal
Surge Current (8.3ms)
Operating Temperature Range
Storage Temperature Range
Thermal Resistance ..... .

2 Amp

1 AMP
SERIES

........... l.OA.. .
............ O.5A

2 AMP
SERIES

....... 2.0A
... 1.0A

.......................... 15A...
.......... 20A.
................. 25A
............... ............... ........ ......................... -195·C to +17S'C
............ .
..... -195·C to +200'C
... See lead temperature derating curves ...... .

MECHANICAL SPECIFICATIONS

r

BAND INDICATES

CATHODE END

.155TVe

i

===QI

MIN~50 M~"",

1--';00
17.8mm

UTR10·UTR60
3.9mm

UTR01·UTR61

UTR02·UTR62

BODYA

r-:- t

.085 MAX
2.l6mm

=

6.35mm

+

L.o30±.cxn
O.77mm ±.O3
.055TVP.
1.4mm

1.625 MIN.
41.3mm

Part Identification: Green band indicates "UTR." Part
number printed on body.
Polarity: Denoted by Green band.

Weight: 0.26 grams, typical.

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nL::::Jn
2-170

SEMICONDUCTOR
PRODUCTS

_UNITRDDE

UTRlO-UTR60

UTROl-UTR6l

UTR02-UTR62

ELECTRICAL SPECIFICATIONS (at 2S'C unless noted)
Maximum
Junction
Capacitance

Maximum
Maximum
Forward
Type

PIV

UTR02
UTRl2
UTR22
UTR32
UTR42
UTR52
UTR62
UTROI
UTRll
UTR21
UTR31
UTR41
UTR51
UTR61
UTRlO
UTR20
UTR30
UTR40
UTR50
UTR60

50V
100V
200V
300V
400V
500V
600V
50V
100V
200V
300V
400V
500V
600V
100V
200V
300V
400V
500V
600V

Voltage
Drop

leakage

Maximum

Current

Reverse
Recovery

@PIV

l.lV@ lOOOmA

31'A

100l'A

1.IV@SOOmA

31'A

lOO!,A

l.lV@ 200mA

3!'A

100!,A

III

@2S'C

Time*

lOO'C

2S"C

OV

10V

150pf
lOOpf
80pf
70pf
60pf
50pf
40pf
150pf
100pf
80pf
70pf
60pf
50pf
40pf
100pf
80pf
70pf
60pf
50pf
40pf

250n5
250n5
250n5
300ns
350n5
400n5
400n5
250ns
250ns
250ns
300n5
350n5
400ns
400n5
250ns
250n5
300n5
350ns
400n5
400n5

60pf
40pf
32pf
28pf
24pf
20pf
16pf
60pf
40pf
32pf
28pf
24pf
20pf
l6pf
40pf
32pf
28pf
24pf
20pf
16pf

*Recovery time is measured from lO.OmA to lO.OmA recovery to S.OmA

Maximum Current
vs Lead Temperature

Maximum Current
vs Lead Temperature

Maximum Current
vs Lead Temperature
1.5

l

~
....
z

=

~

"'II:II:
U

~

C

"';;:

;:
u

.~",,,

"'II:

"'
«
II:

............

"'
~

-

..!;.='"..~

:J

"'

2 AMP SERIES

lfB"

I

"" """~

~

-

............

-

...........

25

50
Tl -

-

75

100

..

3

:E

0

'"'"

2.5 ~
2

®

-"~

1.5

Ul

~ ~~
I~

125

3.5

150

0

1 AMP SERIES

$

5II:
0:

:J 2
u

L

==

liS"

~
;;:
;:

~

"'

~~

u

0:

"' 1
"g
>

"
_0

o

25

175

50
T, -

LEAD "TEMPERATURE (Oe)

2.5 0

-

2

~

1.5 -

®

"'---"~

75

100

-

I

-

.5

~

~

125

LEAD TEMPERATURE (Oe)

Reverse-Recovery Circuit

I

.5

"'«>

.75

I

t.5.-~

I

Si

'

I

t----f'~~"'-t-_1

.25

0

-"

175

25

50
Te -

75

100

125

150

175

LEAD TEMPERATURE ( C)

100

"

Z

~.

80

"~

60

0:
UJ

en

o

UJ

D.U.T.

:;;

. T1 ~

I

Allowable Forward Surge vs Number of Cycles

..--------0
10V 0 - - - - - - - - - ,
_
D.C. +

990U

.1•2S c-"

r----f"~~--+_:+_i ~

"'

"'~

1.75

-=r

I,

:

u

II

0

~'

"';:;;:
II:

;;I

~

ISO

0:
II:

_ct

tAl AMP SERIES

I

r-+--l----t-------,----,--j- 1.5

":;; "':J
u
'"'" c

-

l=""""-

~---

,

~
....
z

....

,---------,-----,----,---------,- 2.5

100

u:

40

'"~

20

~

o

f----1I-H-HH-tH~~~;:-I__1
-...::::

~

I"

I iJr~~~ I"

celnte~s ~

TUrret 1/2" centers-

Printed Circuit-

I--

1ft

+

10
100
HALF CYCLES OF 60 Hz SINE WAVE

20V

' - - - - - - - - - 0 D.C.o----------l

UNITRDDE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404. FAX (617) 924-1235

2-171

1.000

PRINTED IN U.S.A.

UTRIO-UTR60
Typical Forward Current
vs Forward Voltage
10

2 AMP SERIES

0.5 AMP SERIES

1 AMP SERIES
/~ ~

~ -Z
I-

z

W

~/
8-;p(,~

.2

o

0

(,)

....

Z .2

~ .1

......... f'\t""

i-i-/

'"I

0.05

I{

.01

/ II

/ / /

.002

I I

.001
.2

.4
V, -

II

.002

I
1.2

.2

1.4

.4
V, -

:1

.1

II II

.05

J%~

.02

-"'"
.01

/

.005

II

I

.001

.6
.8
I
VOLTAGE (VI

'"i

II

.005

1/ IV

.2

0

I

I

.01

I /

.005

Z
w

II:
II:

II /

II

-",".02

~

....
r-

:;: ;: J /-

'0.05
"I

/ il J

-",".02

If.tCJ
"~/l CJ
~ 8;'~

w

{J

I<'

~ .1

IV
1/ /

L-

V

~ .5

/V ~/

.5

/L

'j

j

~ .5

UTR02-UTR62

Typical Forward Current
vs Forward Voltage

Typical Forward Current
vs Forward Voltage

10

UTROI-UTR61

I

II

.002

.6
.8
I
VOLTAGE (VI

1.2

1.4

:1

I

PI}'
Iii

I()

+ /

I

II

I

.001

.2

.4
V, -

.6

.8

I

1.2

I.'

VOLTAGE (VI

Typical Reverse Current vs PIV
ALL SERIES

.01
.02

~O"C
Efficiency vs Frequency at Rated Current (Sine Wave)

.05
.1

~
I-

.2

w

.5

z

II:
II:

lOa
VI

"-C

"'0

'"

VI

II:

./

10
20

a:

7S"C

50
200

V

500
1.000
lao

ISO

12S"C

50

60

e:~

50
40

N

-J:
~o

V

"

70

>-0
o·
ZC
W

lOa

ALL SERIES

80

i=>

"'w
0'"
::;f5

w
w
>
w

90

~!::j

0

r-

... 0
... 0

w@;

30
20
10

a

2 3 4 6 SIOK
lOOK
1M
FREQUENCY (Hz) - HALF WAVE RESISTIVE LOAD NO FILTER

IK

% OF PIV

Forward Pulse Current vs Pulse Duration

~
z

I-

Reverse Pulse Power vs Pulse Duration
100,000

10.000

ALL SERIES

ALL SERIES

Square Pulse Current vs
Duration for Non-Repetitive Pu Is.
(8.3 ms sine wave equivalent
to 3 ms square wave)

........
1.000

~
W

.
~

II:
II:

0

0

VI

.'"
-"

(8.3 ms sine wave equivalent
to 3 ms square wave)

10,000

0:

W

'"
w

Square Pulse Current vs
Duration for Non-Repetitive Pulse

1.000

w

VI

'".

100

-"

10

100

10
.1p.s

tllS

lO,us
lOO,us
PULSE DURATION (SECONDS)

UNITRODE " SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET" WATERTOWN, MA 02172
TEL. (617) 926·0404 " FAX (617) 924·1235

1ms

lOms

2-172

lOOns

l.us

lO,lS
lOOlls
Ims
PULSE DURATION (SECONDS)

lOms

PRINTED IN U.S.A.

RECTIFIERS

UTR2305- UTR2360
UTR3305- UTR3360
UTR4305- UTR4360

Fast Recovery, 2Amp to 4Amp

FEATURES
• Continuous Rating: to 4A
• Controlled Avalanche
• Surge Rating: to lOOA
• PIV: to 600V
• Miniature Package

DESCRIPTION
Small size and high surge capability
make this series of power switching
rectifiers desirable for power supplies
where size, weight and reliability are
important.

ABSOLUTE MAXIMUM RATINGS
2Amp

3 Amp

4 Amp

Peak Inverse Voltage

Series

Series

Series

50V
lOOV
200V
400V
500V
600V

UTR2305
UTR2310
UTR2320
UTR2340
UTR2350
UTR2360

UTR3305
UTR3310
UTR3320
UTR3340
UTR3350
UTR3360

UTR430S
UTR4310
UTR4320
UTR4340
UTR4350
UTR4360

2 AMP

3 AMP

4AMP

SERIES
Maximum Average D.C. Output Current
SERIES
SERIES
.... 4.0A
@TA =25'C .
. ........ 2.0A.
.. ....... 3.0A. ........ .
.. .... 2.0A
@ TA = lOO'C
...................... 1.0A ....
1.5A. ..... ..
Non-Repetitive Sinusoidal
Surge Current (S.3m.s) ...
.................................. 60A...
. . . SOA..... .................. ....... ......... .. lOOA
Operating Temperature Range
..........................................-19S'C to +175'C ........ ..
Storage Temperature Range
................................................................................................-19S'C to +200'C ... .
Thermal Resistance .
.. ............ See lead temperature derating curve .................... .

MECHANICAL SPECIFICATIONS
UTR4305-UTR4360
BAND INDICATES
CATHODE END

=

~

UTR3305-UTR3360

=

r.

UTR2305-UTR2360

BODYB

145 MAX
3.68mm

t

.115 TYP
2.9mm

Part Identification: Green band indicates "UTR." Part
number printed on body,
Polarity: Denoted by Green band.

Weight: 0.75 grams, typical.

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONOUCTOR

~ PROOUCTS

2-173

_UNITRODE

UTR2305-UTR2360 UTR3305-UTR3360 UTR4305-UTR4360
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Maximum
Leakage

Maximum
Forward
lype

UTR4305
UTR43lO
UTR4320
UTR4340
UTR43SO
UTR4360
UTR3305
UTR3310
UTR3320
UTR3340
UTR3350
UTR3360
UTR2305
UTR2310
UTR2320
UTR2340
UTR23SO
UTR2360

SOV
100V
200V
400V
500V
600V
50V
lOOV
200V
400V
500V
600V
50V
lOOV
200V
400V
500V
600V

Reverse
Recovery

@PIV

Voltage
Drop

PIV

Maximum
Junction
Capacitance
@ 2S'C

Maximum

Current
25'C

100'C

l.lV @4A

5pA

100pA

l.lV@3A

5pA

100pA

1.lV@2A

5pA

100pA

Time*

OV

-IOV

250ns
250ris
2SOns
400ns
400ns
400ns
250ns
250ns
250ns
300ns
350ns
400ns
250ns
250n5
2SOns
300ns
350ns
400ns

600pf
400pf
320pf
240pf
200pf
160pf
600pf
400pf
320pf
240pf
200pf
160pf
600pf
400pf
320pf
240pf
200pf
160pf

240pf
160pf
128pf
96pf
SOpf
64pf
240pf
160pf
12Spf
96pf
80pf
64pf
240pf
160pf
12Spf
96pf
SOpf
64pf

*Recovery time is measured from lA to lA recovering to O.SA.

Maximum Current
. vs Lead Temperature

Maximum Current
vs Lead Temperature

'\.L _ Vo"
'\J
;{
I'\.
;:6
0:

~5
o

~="...

~

u

w
iL4

~
w

0:

w3

'""

::!

.~~~"'" """
..
I'----

0:

~2

..,0

\

'\.

4 :;;

'"

:0

@

\

3 _""

""

I"----..

\

'\..

0

04
iL

;:

75

100

125

ISO

~
z
>-

4

'\..

"

............

~

2

'\.

"'-\

~

""'- .:--..\

".l
0

3

50
T, -

75

100

125

150

3.5

""l

~=r''''\..

2.5

0

W

iL

;: 2
u
UJ

0:

L=1>
-...........,

w

~2

'\.\

f'-...

'"

2

5

L:=; Va"

0:

\

L=1~,

3 AMP SERIES

_6

...$z

1\

z

w

4 AMP SERIES

Maximum Current
vs Lead Temperature

100

II)

..J

:J

:J

0..

Il..

100

10

10

.1.u:5

l.us

lOps

100,u5

Ims

lOms

PULSE DURATION (SECONDS)

UNITRODE " SEMICONDUCTOR PRODUCTS
580 PLEASANT STR~ET " WATERTOWN, MA 02172

TEL (617) 926-0404" FAX (617) 924-1235

lOOns

l.us

10,ls

lOOps

Ims

lOms

PULSE DURATION (SECONDSI

2-174

PRINTED IN U.SA

UTR2305-UTR2360 UTR3305-UTR3360 UTR4305-UTR4360
Typical Forward Current
vs Forward Voltage

Typical Forward Current
vs Forward Voltage
10

10

10

~

L

4 AMP SERIES

2 AMP SERIES

'/ '/

/

VI II

~ .5

zUJ

~J I

.2

jJ~
.....
.Is. . A~/f
rv '"
-f- -f- -f- I

~ .1
:::l

u .05

.:.02

I I
I I II

.01
.005

/ il

.002

II

.001

.2

_".02

.005

.4
V, -

.6
.S
1
VOLTAGE (V)

1.2

.2

1.4

I

:<
.3
....
z

W

.005

.6.S
VOLTAGE (V)

1.4

.2

.4
V, -

.6
.S
1
VOLTAGE (V)

1.2

1.4

Reverse Recovery Circuit
5V

D.C.

0-----------------,
+
SCOPE

.2

6SIl

.5

-----

-

U

a:

1.2

'/

_~-50'C

W

en
a:

II

.001

.05
.1

:::l

>
UJ

I

.002

_

a:
a:

UJ

I)

j
II

.01

Typical Reverse Current vs PIV
.01
.02

Il/

..,..02

I

.4
V, -

~, '/.... -ftv 11'I 1

U .05

II

II

.001

.1

:::l

I

I II

.002

I I

"'
~

I

.01

II
1/:(.)
,(.) ~t
~g~o

Z .2

cO () 0

II /

I

/

.5

....

'/- '/- -f- I

U.05

I

5:

V

S ~~~/k

~ .1
:::l

II / / II

I

I&()

.2

W

I

/

~ .5

....
z

/;/ 11/
1/ / I111

/

II

/V:;

3 AMP SERIES

//V

/ /

....

Typical Forward Current
vs Forward Voltage

10
20

-

50
100
200

./

25'C

....-----'\,N\r--------l'::>1--------<~.I'v"".....----.....HI' .
D.U.T.

w

./

75'C

~--------------+_o~~.o_--------------~

/
/125'C

SOD
1.000
150

50

100

% OF PIV

Efficiency vs Frequency at Rated Current (Sine Wave)

-............

100

en

90

:::lo

SO

~>

:::lW

0"

~ffi

~~
>-ti
U'
ZC

"
Z

'"

70

~a:

I'

"~
en

~o

20

w@

10

60

C

W

i:i:

40

111111

80

W

50

30

.... 0
.... 0

-..........

60

WN

-l:

ALL SERIES·

Allowable Forward Surge vs Number of Cycles
100

40

f---f-+-t+ttHf~~~:::::-f-1

rYr'ii

TUrret 1" centers -

~
=i-I-

Turret W' centers ""~t-:
Printed Circuit- / /,

--

j

U
UJ

'"U)
....

20

o

lK
2 3 4 6 S10K
lOOK
1M
FREQUENCY (Hz' -HALF WAVE RESISTIVE LOAD NO FILTER

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

2-175

100
10
CYCLES AT 60 Hz HALF SINE WAVE

1,000

PRINTED IN U.S.A.

UTR4405-UTR4440
UTR5405-UTR5440
UTR6405-UTR6440
UTR4405HR2 .. UTR4440H R2
UTR5405HR2-UTR5440HR2
UTR6405HR2-UTR6440HR2

RECTIFIERS
Fast Recovery, 6 Amp to 9 Amp

DESCRIPTION
The same basic construction as all
Unitrode diodes, but using a miniature
stud mounting and larger junction area,
provides a 9 Amp continuous and 150
Amp surge rating in a package only one
fifth the weight and one quarter the
volume of conventional types.

FEATURES
• Continuous Rating: to 9A
• Controlled Avalanche
.• Surge Rating: to 150A
• .fast Recovery, 40kHz Operation
• PIV'to 400V
• Miniature Package

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

6 Amp
Series

7.S Amp
Series

9Amp
Series

50V
lOOV
200V
400V

UTR4405/4405HR2
UTR441O/44lOHR2
UTR4420/4420HR2
UTR4440/¥40HR2

UTR5405/5405HR2
UTR5410/5410HR2
UTR5420/5420HR2
UTR5440/5440HR2

UTR6405/6405HR2
UTR64lO/64lOHR2
UTR6420/6420HR2
UTR6440/6440HR2

6 Amp
7.S Amp
9.0 Amp
Series
Series
Series'
Maximum Average D.C. Output Current @ Tc ~ lOO°C ......... 6.0A ................. 7.5A ................. 9.0A ............. .
Non-Repetitive Sinusoidal Surge Current (8.3ms) .............. 120A ................. 135A ................. 150A ........... ..
Operating Temperature Range ................................................. -195°C to +175°C .............................. .
Storage Temperature Range ................................................... -195°C to +200°C .............................. .
Thermal Resistance ................................................................ 7.5°C/W ................................... .

MECHANICAL SPECIFICATIONS
UTR440S-UTR4440
UTR540S-UTR5440
UTR640S-UTR6440
UTR440SHR2-UTR4440HR2 UTRS40SHR2-UTRS440HR2. UTR640SHR2-UTR6440HR2
.005 MAX.

Rad;u,

#4·40

x

.045" TVP .

(4.7Smml

(O.l1mm)

~~
MAX.

.187" HEX.

(4.75mmJ

/ ----==r./,\

.112 MAX.
to Shoulder

-~

.187" MAX.

BODY C - Stud Mount

.460"
1(1l·68mm)

)...

1/

~

:~~g.: l::~:~~: LONG THREAD '~;~~~~i

Part Identification: Numerals and polarity letter indicate UTR type number, e.g., UTR 4405.
Polarity: Cathode to Stud is standard. Reverse polarity denoted by "R" suffix.
Finish: Metal parts gold plated per MIL-G-45204, Type II.

Weight: 1.5 grams, typical.
Also available with insulated stud. Reference Design Note 17.
Installation
Maximum unlubricated stud torque: 28 inch·ounces.
Mounting hardware supplied.
Do not use a screwdriver in the turret slot for installation purposes, or damage may result.

n
n
CJ
2-176

SEMICONDUCTOR
PRODUCTS

_UNITRODE

UTR4405·UTR4440
UTR4405HR2·UTR4440HR2

UTR5405·UTR5440
UTR5405HR2·UTR5440HR2

UTR6405·UTR6440
UTR6405HR2·UTR6440HR2

ELECTRICAL SPECIFICATIONS (at 25"C unless noted)
Maximum

Maximum
Reverse
Curren! @ PIV

Forward

Voltage
Type

PIV

UTR6405/6405HR2
UTR6410/641OHR2
UTR6420/6420HR2
UTR6440/6440HR2
UTR5405/5405HR2
UTR541O/541OHR2
UTR5420/5420HR2
UTR5440/5440HR2
UTR4405/4405HR2
UTR441O/441OHR2
UTR4420/4420HR2
UTR4440/4440HR2

50V
100V
200V
400"
SOV
lOOV
200V
400V
50V
100V
200V
400V

*Recovery time is measured from lA to lA, recovering

Typical Forward Voltage
vs Forward Current

9 AMP SERIES
10,000

.s

5,000

z

2.000

I-

w
c:
c:
:J
u

I

~

1,000

0V

II; 'II

~
jl/ 'f

+l00'C
- +175'~~
.
'/

500

I I
+2S'C
-SO'C

100'C

l.lV@6.0A

lOIlA

300llA

l.lV@ 5.0A

10pA

300pA

l.lV@4.0A

10llA

300l'A

too O.SA.
Typical Forward Voltage
vs Forward Current

/11
III

100

.2

.s

5,000

I-

zw

2,000

c:
c:
u

1,000

:J

500
200

.6

.8

1 1.2 1.4

20

:<

I

o

.2

VOLTAGE (V)

.4

I, -

1/ '/ /
)j

U

100

I

~ r-- -

//

50

-"

I

20
10

I
.6

.8

V/l/

I '/

200

:J

o

.2

I

I
.4

.6

'J

.8

1 1.2 1.4

1,- VOLTAGE (V)

1 1.2 1.4

VOLTAGE (V)

Typical Reverse Current vs PIV
.02
.05
.1
.2
.5

~
l-

z

:J

'"

OPTIONAL HIGH RELIABILITY (HR2) SCREENING

V

. 50'C

2
5
10
20

U

w
c:
w
>
w
c:

ALL SERIES

I

w
c:
c:

t

S' C

v

so

7S'C

100
200
500
1.000
2.000

y
12S'C
150

The following tests are performed on 100% of the devices specified
UTR4405HR2 through UTR6440HR2.
SCREEN

+175'C~

C
r-- .-t 100• C - (j C/12/
50' C
I.

500

w
c:
c:

:;~§o
-j.....,/C>tu

III

1,000

IZ

I.Vo ' /

I

2,000

.s

/,

- r-

6 AMP SERIES

5,000

IVI ~
II

100

300n5
300n5
400n5
500n5
300n5
300n5
400n5
500n5
300n5
300n5
400n5
500n5

10,000

/, ff,

50

.4

I, -

:<

-"

Ll
o

10.000

Maximum Reverse
Recovery Time"

Typical Forward Voltage V5 Forward Current

// W

.7.5 AMP SERIES

I

/

200

50
30

25'C

30,000
20,000

30,000
20,000

:<

Drop

MIL·STD·750
METHOD

100
so
% OF PIV

CONDITIONS

1. High Temperature

1032

24 Hours @ 175"C

2. Temperature Cycling

1051

C, 20 Cycles, -65 to +175"C. No dwell required
@ 25°C, t ~ min. extremes

3. Hermetic Seal
a. Gross Leak

1071

E, ZYGLO

4. High Temperature Reverse Bias (HTRB)
5. Interim Electrical Parameters
6. Power Burn·in
7. Final Electrical Parameters
UNITRODE ,SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERTOWN, MA 02172
TEL. (617) 926·0404 ' FAX (617) 924·1235

1038
GO/NO GO
1038
GO/NO GO

2·177

A, TA = 150ac. VR = 80% of rating, 48 hours
VF + IR @ 25"C

S. TA

= 25°C, 96 Hours, 10 adjusted 150ac.

"lj"

175"C
VF + IR @ 25"C
PDA = 10% (Final Electricals)

PRINTED IN U.S.A.

UTR4405-UTR4440
UTR4405HR2-UTR4440HR2

UTR5405-UTR5440
UTR5405HR2-UTR5440HR2

Current Rating vs Case Temperature

Forward Pulse Current vs Pulse Duration
10,000

100

I'\.

ALL SERIES

Square Pulse CUrrent vs
Duration for Non-Repetitive Pulse

"-

~
z
W

'z"

~8.3

:

ALL SERIES

I-

~

UTR6405-UTR6440
UTR6405HR2-UTR6440HR2

msec sine wave equivalent
to 3 ms square wave)

1,000

0:
0:

50

"'"

0:

=>

~

<)

w

en

100

--'

=>

Q.

\
40

60

100

80

120
140
TEMPERATURE ( C)

i",.

10

180

160

.IILs

200

100

en

Square Pulse CUrrent vs
Duration for Non-Repetitive Pu Ise

10,000

11111

0:

~
0

"w
en

IIIII~

1111

1,000

~ffi

60

~~

50

>-0
<).

40

WN

30

III

ZO

--'

=>

"-

-l:
~o

100

I"'

70

0'"

W

ALL SERIES

80

:>w

to 3 ms square wave)

r-....

lOms

90

i=~
=>0
~>

(S.3 msec sine wave equivalent

ALL SERIES

lOJls
100#5
Ims
PULSE DURATION (SECONDS)

Efficiency vs Frequency at Rated Current (Sine Wave)

Reverse Pulse Power vs Pulse Duration
100,000

!

1ps

20

"-0
,,-0

w@l

ID

10
lOOns

l~s

lOO~s

laps

Ims

2346810K
lOOK
1M
FREQUENCY (H,) -HALF WAVE RESISTIVE LOAD NO FILTER

lK

lOms

PULSE DURATION (SECONDS)

Reverse Recovery Circuit

,------"'"_-0 ~.~.o-+------..,
UZ840

...
O.U.T.

SCOPE

II!

5!!

' - - - - - - - +...

~~. 0 - - - - - - - - - '

MECHANICAL SPECIFICATIONS

~

012" TYP

ShaUlderl

30mm

.Q6O

of

Copper. Gold Plated
.005" MAX. "RAD.
.13m'll

10-

I

125" TYP
318mm

~

.l.

r

1

21 TYtr~
533mil

3.~l~M:'RP:Us
~J.f~m~~~;~IJ:~

SlyloW

Gold Plated
Nickel Ribbon
{2 Placesl

Seryllia
Insul.ting
Full thread to within
Disc

~

·~AX.-~\
101~

385 MAX -oj
~
978mm
750' MIN
1905mm

\-

250" HEK.
635mm

Dimensions in inches.

StyloV

Beryllia Insulatinl Disc:
.012"

·. . . . . ."1[

Full thread to within

3.Jl~M~~fJfus

1
6.321t.240"t.OlO"
6.10mmt25mm
Copper,QoIdPliilted

.TYP.
.30mm

I""

!11.---n:="C'f'i

T~~t1I11::i~p~~

.005" MAX. RAIl.
. 13mm

Dimensions in inches•.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02V2
TEL. (617) 926-0404 • FAX (617) 924-1235

2-178

PRINTED IN U.S.A.

RECTIFIERS

UTX l05·UTX125
UTX205·UTX225

Super-Fast Recovery, 1 Amp and 2 Amp

l1li
FEATURES

DESCRIPTION

•
•
•
•
•

These miniature super-fast recovery rectifiers permit operation at full power at
frequencies as high as 100kHz square
wave. They may be used as half wave
rectifiers or as legs of a bridge.

Continuous Rating: to 2A
Controlled Avalanche
Surge: to 2SA
Recovery Time less than 7Sns
Miniature Package

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage

1 Amp
Series

SOV
100V
lS0V
200V
2S0V

UTXI0S
UTXll0
UTXllS
UTX120
UTX12S

2 Amp

Series
UTX20S
UTX210
UTX21S
UTX220
UTX22S

1 AMP

2AMP

Maximum Average D.C. Output Current
SERIES
SERIES
@ TA == 2SoC
................. 1.0A ....
2.0A
@ TA == 100°C.
....................... O.SA.
...... 1.(}A
Non-Repetitive Sinusoidal
Surge Current (8.3ms)
............ 20A .. ..
.. 2SA
Operating Temperature Range
.............................. -19SoC to +175°C .. .
.... -195°C to +200°C .. .
Storage Temperature Range
Thermal Resistance
.............................. See Lead Temperature Derating Curve .. .

MECHANICAL SPECIFICATIONS
UTX105·UTX125
BAND INDICATES
CATHODE END

~
==:=(JI
HOO

r·

MIN~50M~40

17.Bmm

3.9mrn
155TYe

=

63Smm

r-=f

UTX205·UTX225

BODY A

.085 MAX.
2.l6mm

t
L.030±.OOl
O.77rnm t.O)

.055TYP.
1.4mm

1.625 MIN.
41.3mm

Part Identification: Green band indicates "UTX." Part
number printed on body,

Polarity: Denoted by green band.
Weight: 0.26 grams, typical.

2-179

~UNITRODE

UTX105-UTX125

UTX205-UTX225

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Voltage
Forward Drop

25'C

Leakage Current
@PIV
100'C

1.0V@lAdc

3p.A

50p.A

75ns

1.0V @ 0.5 Adc

3p.A

50p.A

75ns

Maximum
Type

PIV

UTX 205
UTX210
UTX 215
UTX 220
UTX 225
UTX 105
UTX 110
UTX 115
UTX 120
UTX 125

50V
lOOV
150V
200V
250V
50V
100V
150V
200V
250V

Max. Reverse
Recovery

Time*

*Recovery time IS measured from lO.OmA to lO.OmA recovery to 5.DrnA.

Maximum Current
vs Lead Temperature

Maximum Current
vs Lead Temperature

1 AMP SERIES

5:

L

5:

...z

...z
'"'"
'"U
:::l

0

L = Vs"

C

"'-l

'"'"
'"S!
'"'"~

0>= '" ~

u

I

...............

50
T, -

@

'"

1.

...............

~

.!:....: ~4"

U

'"'"
"'"

.
.'"

OIl

(1

0:

~
~

~

ii:

t:

.5

>

"o

.!:..='Is.~

0

II

...........

.2
25

u

1.5~-f

L='IiI" "

1

~
In

'"

~

'"

ii:

~

'"'"
'":::l

2.5 "

2 AMP SERIES

= Vo"

.............
1

3

"-

I

~

.2

75
100
125
150
175
LEAD TEMPERATURE I'C)

~-f

'" .""~

t'-.....

~

'"

@

2

II

........

...........

~ ~-

.5

"'\ o

25

50
75
100
125
150
175
T, - LEAD TEMPERATURE I'e)

Efficiency vs Frequency· at Rated Current (Sine Wave)

Reverse Recovery Circuit
100

lKIl
~

'"

...

90

I-- ALL SERIES

... ...J

+

:lo

80

:l'"

70

~ffi

60

1=>

9OO!)

0"

20V D.C.

~~

+
Scope

1011

>-u
U·

ZC

40

",N

30

~o
,.0
,.0

20

-I

"'@

I

I

i

10
lK

=

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEl. (617) 926·0404 • FAX (617) 924-1235

50

2

3 4

6 B 10K

lOOK

1M

FREQUENCY (H,) --HALF WAVE RESISTIVE LOAD NO FILTER

2-180

PRINTED IN U.S.A.

UTXI05-UT~125

Typical Forward CUrrent
vs Forward Voltage

Typical Leakage Current YS. PIV
ALL SERIES

.001
.002

Z

:>

'"0:
'">

'/
~

I

c

I-

Z .2

w

-tz;·c

~

.5

VI

~ .1

i

:>

U.os

1

.01

I

10
20

.005

1

~C

50
100
150

100

-r-

U.os

.2

% OF PIV

.01

.8

.001

.6

V, -

VOLTAGE (V)

1

1.2

(8.3ms
to 3 ms square wave)

........

~

lK

I

I

I
II

I

II

.4

.6

V, -

VOLTAGE (V)

.8

1

1.2

I.4

Square Pulse Current vs
Duration for Non~Repetitive Pu Ise
(8.3 ms sine wave equivalent
to 3 mS'square wave)

10K

0:
W

U

.~

w

Ul

0:
0:

VI
...J

a

Reverse Pulse Power vs Pulse Duration
ALL SERIES

:>

.

~

lOOK

ALL SERIES

l-

.2

1.4

Forward Pulse Current vs Pulse Duration
10K

:!:

II

.002

.4

0

:1

.005

I

I

II

I

..,..02 "

I I

II

50

et)

:>

I I
/ II

I

.002

.001

kCJ ~ CJ CJ-r?; $ If-r-

I-

Z .2
w
~ .1

I 1/ I I

II

1/1/ I

~ .5

r{CJ-~

1---+--t---i1!;fo

..,..02

~7s'C

II

l

I

/'

W
0:

Z
w

~~

//V

I

.05
.1
.2

U

2 AMP SERIES

so·C

.3 .02
I-

'"0:0:

10

I ......

•005
.01

~

Typical Forward Current
vs Forward Voltage

10 , - - - - - - - - - , - - - , - - y - - - - ,
1 AMP SERIES

1

UTX205-UTX225

IK

w

..

100

...J

:>

:>

10

100

1111111

10
l.us

100~s

lO.us

IOms

Ims

lOOns

IpS

PULSE DURATION (SECONDS)

lOJls

lOOps

Ims

IOms

PULSE DURATION (SECONDS)

Allowable Forward Surge vs Number of Cycles'
lOa

I III

'z"
~
0:

80

'"

:>

60

1--1-+-++++tlfi;;::::,.."'5~::-1H Turret

c

en

I

I

centers Printed Circuit

~~

...;:

w

.....

I

Turret I" centers-

VI

u:
~

I 1 1

I I ""

W

0:

ALL SERIES

lJ2"

I

I---

40

20

C

10

100

1.000

HALF'CYCLES OF 60 Hz SINE WAVE

UNITRODE • SEMICON'DUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924,·1235

2-181

PRINTED IN U.S.A.

..RECTIFIERS

UTX3105-UTX3120
UTX 4105-UTX 4120

Super-Fast Recovery, 3 Amp and 4 Amp

DESCRIPTION
These miniature super-fast recovery rectifiers permit operation at full power at
frequencies as high as' 100kHz square
wave. They have the'same unique
Unitrode construction as the familiar
.2:amp UTX series. but are scaled ·up in
size to provide higher continuous and
'surge current'capability.

FEATURES
• Continuous Rating: to 4A
• Controlled Avalanche
• Surge: to BOA
• Recovery Time less than lOOns
• Miniature Package

ABSOLUTE MAXIMUM RATINGS
3Amp

4 Amp

Peak Inverse Voltage

-Series

Series

50V
l00V
IS0V
200V

UTX 3105
UTX 3110
UTX311S
UTX 3120

UTX 4105
UTX 4110
UTX411S
UTX4120
3AMP

4 AMP

Maximum Average D.C. Output Current
SERIES
SERIES
@ TA = 25'C .......................................... 3.0A ................................ 4.0A
@ TA = l00'C .......................................... I.SA................................. 2.0A
Non-Repetitive Sinusoidal
Surge Current (S.3ms) ................................ 60A ................................. BOA
Operating Temperature Range .........................................................,.....19S·C to +17S·C........ .
.. ........ -19S·C to +200·C ........ ..
Storage Temperature Range.
Thermal Resistance ...........................................,........ See Lead Temperature Derating Curve

MECHANICAL SPECIFICATIONS
BAND INDICATES
CATHODE END"'1
\{,

.

c:=:J11

r

.175 TYP.
4.4mm

r:
•L

) c::=::J

7.62mm-

BODY B

.145 MAX.
3.68mm

•

I

-~" ,~=~
~24.8mm

. UTX 3105-UTX3120 UTX 4105-UTX ~120

j

.040±.OOl
1.02mm±.03

-.:~.~~~

~---------~~~~~~:.----------~
UTX Prefix is identified by a Green Cathode Band

nn

SEMICONO.UCTOR

~ PROOUCTS

2-182

- _'UNITRODE

UTX 310S-UTX 3120

UTX 41OS-UTX 4120

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

.

Type
UTX 410S
UTX 4110
UTX4115
UTX 4120
UTX 310S
UTX 3110
UTX 311S
UTX 3120

PIV

Maximum

Maximum leakage

Forward

Current @ PIV

Maximum
Reverse
Recovery
Time**

Voltage Drop"

25'e

1V@3Adc

SI,A

7SpA

lOOns

1V@2Adc

SpA

75pA

lOOns

SOV
100V
lS0V
200V
SOV
100V
lS0V
200V

100'e

Forward voltage IS measured at least 1 second after application of current.

**Recovery time is measured from lA to lA recovering to O.SA.

Maximum Current
vs Lead Temperature

Maximum Current
vs Lead Temperature

I\.L =-- lil"

4 AMP SERIES

3 AMP SERIES

~

'\
~

I'\.

I-

Z

UJ

!3
u

I-

5

oUJ

"'-

u

~=W'

UJ

c:
UJ

~

""c:
UJ

>

:0
."

3

1""- '\.

UJ

;::

u 3
UJ
c:
UJ

II

~

""c:
>
"I

~
~

"J

~

L

==

3'4~

"- I"-

1"..

I'---..

"""

~

'\.

""

"'-.,

I

25

~

1'\
'\

"- J\l"'-.\

"'"

1\\
i'..\\

25

3..." "-

UJ

n

~'\ 1\

I

lIS"

'i

;;:

"'"

@

"-i

\
""- ~\

4

0

0

=

L

U

:;;

1\

"I
-

4

'\.

1--

;;:
;::

UJ

c:
c:

f'\

=.

,""" i"-,

Z

'\.

I~ ~ 3,,"

c:

L

~

50
75
100 125
150
175
T, - LEAD TEMPERATURE ('e)

50
75
100
125
150
175
T, - LEAD TEMPERATURE (OC)

Efficiency vs Frequency at Rated Current (Sine Wave)

Reverse Recovery Circuit
100
5V
D.C.

+

SCOPE

VI

90

:00

80

i=~

go>

:OUJ

0"

68~l

~g

4~!

70

50

>-0
~o

40

UJN

30

"0
,,-0
,,-0

20

-I

w@

+

ALL SERIES

60

.• >

~«

-

10
1M
lOOK
2 3 4 6 810K
FREQUENCY (H,) -HALF WAVE RESISTIVE LOAD NO FILTER

lK

UNITRODE • SEMICONDUCTOR PRODUCTS

580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

2-183

PRINTED IN U.S.A.

UTX 3105-UTX 3120

Typical Leakage Current vs PIV
ALL SERIES

.01
.02

;;C

.5
I-

z

"'a:a:

I---'

10
20
50
100
200

-

500
1,000

L
V7S'C

.hSJ

Z .2

"'~

(f')

.1

:J

II

I

I

-'" .02

j..../

.01
.005

I

100
% OF PIV

I

1/

"'~

0

.4
V, -

.6
.8
1
VOLTAGE (V)

1.2

Forward Pulse Current vs Pulse Duration
ALL SERIES
(8.3 ms sine wave equivalent
to 3 ms square wave)

~

1,000

10,000

0:

"'
~
VI
"'

"'

co:
co:

:::l
U

"'~

II
II
.2

II

.4
V, -

II
I

~

.6.8
VOLTAGE (V)

1.2

1.4

Reverse Pulse Power vs Pulse Duration
100,000

?

1.4

t'\,r It')

II I

.01
.005

.001

f;J u u

'I /

I

.002

glIb

....,

-/- -!- -I- I

_..... 02

II

10,000

~

"'of

:::l

I
.2

.1

U.05

I
II

.001

50

Z .2

U

:1/!!J/:iiI

I

.002
150

0oU 0()

~

II

12S'C

~u
I/~

I-

-/- -/- -I-

lld

J I

~ .5

J.

I-

u .05

f-

.L./

LlL' Lf

J ,/

~ .5

:::l

3 AMP SERIES

L 1

_ _ 25'C

.5
1

10

//1

1/

.2

Typical Forward Current
vs Forward Voltage

V

4 AMP SERIES

I

.05
.1

VI

"'>
"'a:

10

SO'C

u

"'a:

Typical Forward Current
vs Forward Voltage

Y

UTX 4105-UTX 4120

r- ALL

~~
~

1,000

SERIES

Square Pulse Power vs
Duration for Non-Repetitive Pu Ise

It

(S.3 ms sine wave equivalent
to 3 ms, square wave)

...J

100

:::l

:::l

Q.

Q.

10

100

10
l~IS

lOps
IDOl-'s
Ims
PULSE DURATION (SECONDS)

lOms

lOOns

IpS

lOps
lOOps
Ims
PULSE DURATION (SECONDS)

lOms

Allowable Forward Surge vs Number of Cycles
100

"

IIIIII

Z

~
co:

80

""'g;

60

VI

o

"'u::

40

"'~

20

ALL SERIES

I I

f--+-+-+++t+H~~--":::~~--=-t--f--J Tur~~:n;~~
C;i~~:~
1-1- ____

U
Q.

o

10
100
CYCLES AT 60 Hz HALF SINE WAVE

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

2-184

1,000

PRINTED IN U.S.A.

·

RECTIFIER BRIDGES & MODULES

Product Selection Guides
Rectifier Bridges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-3
Rectifier Modules ............................................... 3-6
Datasheets .................................................... 3-12

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926.()4()4 • FAX (617) 924·1235

3-1

PRINTED IN U.S.A.

..

UNITRODE • SEMICONDUCTOR PRODUCTS.
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

3-2

PRINTED .IN U.S.A.

RECTIFIER BRIDGES

PRODUCT SELECTION GUIDE

Single Phase Full-Wave Bridges

/'?
/ft> HJ, HK, HL, HM,
STANDARD RECOVERY

HN,HO,HP

673-2

GorS

697-2

GA

~s ~
"

680-2

679-2

469-1"

SPB25'

680-3

679-3

NA

MD

673-3

697-3

673-4

697-4

Gor S

Gor S

GA

GA

NA

680-4

NA

NB

NB

679-4

NB

469-2"

SPC25'

MD

MC

697-5

680-5

679-5

673-6

697-6

680-6

679-6

469-3**

SPD25*

MD

MC

GorS

GA

GA

NA
NA

G,GA,GH

MC

673-5

G DrS

..

,

NB

NB

673-7

GH

673-75

HJ

673-8

HK

673-85

HL

673-9

HM

673-10

HN

673-11

HO

673-12

HO

*Available as JAN
"Available as JAN, JANTX
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

3-3

PRINTED IN U.S.A.

PRODUCT SELECTION GUIDE

RECTIFIER BRIDGES
Single Phase Full-Wave Bridges

~

~NA'NB

FAST RECOVERY

676-1

GorS

698-1

GA

684-1

NA

~

~MA' MB, MC, MD

683-1

802-2

NB

MA

803-3

802-3

803-4

802-4

MB
MB

676-2

698-2

684-2

683-2

676-3

698-3

684-3

683-3

676-4

698-4

684-4

683-4

676-5

698-5

684-5

683-5

676-6

698-6

684-6

683-6

Gor S

GorS
GorS
GorS

Gor S

GA
GA

GA
GA
GA

NA
NA
NA
NA
NA

MA
MA

NB
NB

NB

NB
NB

676-12

HJ

676-18

HK

676-24

HL

676-30

HM

3-4

PRINTED IN U.S.A.

PRODUCT SELECTION GUIDE

RECTIFIER BRIDGES
Three Phase Full-Wave Bridge

~:

~ND

.'

STANDARD RECOVERY

700-1
F

695-1

NC

695-2

NC

678-2

NC

678-4

695-5

678-5

695-6

678-6

NC

701-1

NC

695-4

NC

"

Q

678-1

678-3

NC

~

NC

FAST RECOVERY

695-3

NC

'
~

F

F

483-1'
ME

701-2

NC'

NC

483-2'
ME

NC

NC

483-3'
ME

696-1

NC

682-1

NC

696-2

NC

682-2

F

701-3
F

696-3

682-3

701-4

696-4

F

NC

682-4

701-5'
F

696-5

682-5

701-6
F

696-6

682-6

NC

NC

NC

801-3
ME

800-3 '
ME

801-4
ME

800-4
ME

NC

NC
NC

NC'
NC

"'Available as JANTX

DOUBLERS & CENTER-TAP RECTIFIERS
STANDARD RECOVERY

NO

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172

TEL (617) 926-0404 • FAX (617) 924-1235

3-5

PRINTED IN U.S.A.

RECTIfiER. MODULES

PRODUCT SELECTION GUIDE

STANDARD RECOVERV

USl2
SA
USl5
SA
USl8
SA
US20
SA
US25

S8

USB2.5UDB2.5
DH
DD

. UDE2.5
'DD

UGE2.5

DG

US30

S8
US35
SC
US40
SC

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

3-6

PRINTED IN U.S.A

PRODUCT SELECTION GUIDE

-RECTIFIER MODULES

US60A

KXS60

SO

SM

US70A

SO
USS7.5
DH

USB7.5
DH

USB10
DH
USSlO
DH

688-10
BE

UDA7.5
DO
UDB7.5
DO

UGB7.5

UGE7.5

DG

DG

US80A
SE

US120A
SE

UDAlO
DO
1N5597*
DE

UGBlO

DG

688-12
BE

o,Available as JAN

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL (617) 926-0404 • FAX (617) 924-1235

3-7

PRINTED IN U.S.A.

PRODUCT SELECTION GUIDE

RECTIFIER MODULES

US180A

688·18
BE

SF
US200A

688·20
BE

SF

688·25
BE

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

3-8

.PRINTED IN U.S.A:.

PRODUCT SELECTION GUIDE

RECTIFIER MODULES

..

~N
USR12

SA
USR15

SA
USR18

SA
USR20

S8
USR25

UFB2.5

UDD2.5

S8

OH

DO

UDF2.5

DO
UGF2.5

OG
USR30

SC
USR35

SC
USR40A

SO
USR45A

SO
500ns
250nst

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

500ns
250ns'

3-9

500ns
250ns'

500ns
250ns'
150nst

500ns

PRINTED IN U.S.A.

PRODUCT SELECTION GUIDE

RECTIFIER MODULES

DH
FAST RECOVERY

USR60A

SD
USR70A

SE
UFB7.5.

UDC7.5

DH

DD

UGD7.5

DG

UFS7.5

UDD7.5

UGF7.5

DH

DD

DG

USR80A

SE
UFS10

UDClO

UGD10

DH

DD

DG

688·10R

BE
688·12R

BE

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926.Q404 • FAX (617) 924·1235

3-10

PRINTED IN U.S.A.

RECTIFIER MODULES

PRODUCT SELECTION GUIDE

£~

c:::

BE

..

dS
4 /
Q
P ~PB'PC

7.F-SG

DO

USR180A
SF

SP

688-18R

BE

688-20R
BE

688-25R
BE
500ns

500ns
150ns

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
(Consult factory for applicable part numbers)
SCREEN

MIL-STD-750
METHOD

CONDITIONS

PERFORM ON DISCRETE DIODES PRIOR TO ENCAPSULATION

1- High Temperature Storage

1032

24 Hours @ TA + 175°C

2. Temperature Cycling

1051

C, 10 Cycles, -65 to +175°C. No dwell required
@ 25oc, t ;. 10 min. @ extremes.

3. Hermetic Seal
a_ Gross

1071

E, ZYGLO

4. High Temperature Reverse Bias (HTRB)

1038

5.

Interim Electrical Parameters

A, 48 Hours, TA = 125°C, VR = 80% of rating

GO/NOGO

VF + ' R @ 25oc, PDA = 10% (Final Electricals)

1051

F, 10 Cycles, -55 to +150°C. No dwell required
@ 25oc, t ;. 10 min. @ extremes.

BRIDGE MODULE SCREENING
1. Temperature Cycling
2. Final Electrical Parameters

GO/NOGO

VF + IR @25OC

3. External Visual

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA02172
TEL (617) 926-0404 • FAX (617) 924-1235'"
.

3-11

PRINTED IN U.S.A.

JAN & JANTX 469-1
JAN & JANTX 469-2
JAN & JANTX 469-3

RECTIFIER ASSEMBLIES
Single Phase Bridges, 10 Amp,
Military Approved
FEATURES

DESCRIPTION

•
•
•
•
•
•
•

This series of military high-current
single-phase bridge offer the utmost in
reliability as required in military system
designs. The TX series is assembled
with diodes which have been subjected
to 100% screening tests.

Qualified to MIL-S-19500/469
Current Rating: to lOA
PIV: from 200 to 600V
Surge Ratings of lOOA
Only Fused-in-Glass Diodes Used
Controlled Avalanche Characteristics
Aluminum Heat Sink Case, Electrically Insulated

Dimensions

INCHES
Ltr

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage.
................................
Maximum Average D.C. Output Current
@Tc = +55'C ... :
@Tc=+100'C ..
Non-Repetitive Sinusoidal Surge (8.3ms)
@Tc =+55'C .....
Operating and Storage Temperature Range, Tc
Thermal Resistance Junction to Ambient ..
Junction to Case ....

................ 200 to 600V

............................ lOA
......................... 6A

C,
C,
C,
<10,
90,

...................... lOOA

¢o,

. -65'C to +150'C
..25'C/W
.... 5'C/W

H,
H,
L,
L,

MAX.

MIN.

.367

.375
.450
.225
.149
.101
.076
.570
.370

9.32

.350
.175
.139
.091
.066

.OBB
.020
.735

W

MILLIMETERS

MIN.

.09B
.030
.750

B.B9
4.45
3.53
2.31
1.6B

2.24
.51
IB.67

MAX.
9.53
11.43
5.72
3.7B
2.57
1.93
14.4B
9.40
2.49
.76
19.05

MECHANICAL SPECIFICATIONS
JAN & JANTX 469-1, JAN & JANTX 469-2, JAN & JANTX 469-3

1-8&=::'=_r.@j~l~~+$.\L~+

-r focft

~~~-j~
C,

Ca~2

METAL AREA
SHAPE OPTIONAL
TERMINAL POLARITY
1 :;:: AC

-! r- cfJD2
~DIA ~
I

~~~
4=

See 'table above

+

I

I

,

TERMINAL DETAILS

1$)01

:1:
SEE NOTE 4

MD

---r H1

r

I

b

H2
005

Typical Weight _ 0.35 ounces
10 grams

NOTES:
1. Metric equivalents (to the nearest .01 mm) are given for general information only and are based upon 1 inch = 25.4 mm.
2. Terminals shall be tinned.
.
3. Polarity shall be marked on the bridge body adjacent to terminals. Terminal numbers are for reference and do not have to be marked on
the bridge; however, terminal (1) shall be indicated by a mechanical index such as a line, flattened corner, etc., visible from the top (terminal surface) of the device.
4. Point at which Tc is read shall be in metal part of a case as shown on drawing.

nn

L.::::::J
3-12

SEMICONOUCTOR
PRODUCTS

.... UNITRDDE

JAN & JANTX 469-1

JAN & JANTX 469-2

JAN & JANTX 469-3

Electrical Specification (at 25'C unless noted)

Type

JAN & JANTX 469-1
JAN & JANTX 469-2
JAN & JANTX 469-3

PIV
Per
Leg

Minimum
Reverse
Breakdown
Voltage
Per leg
@ SO ,A

Volts

Volts

200
400
600

240
460
660

..

Maximum
Leakage
Current

Maximum

Maximum
Forward
Voltage Drop

Reverse
Recovery

Per Leg*

Timet

Tr - 2S'C

To _100'C

~S

~A

K-

2

2

125

l.35V @ 15.7A(pk)

Per Leg @ PIV

""Maximum forward voltage drop is measured at a pulse width of B.3ms.
tMeasured in a reverse-recovery circuit switching from a.SA forward to 1.0A reverse current recovering to O.25A.

Typical Forward Voltage Per leg
vs_ Forward Current
20

Typical leakage Current vs. PIV
.01

v.v v.v

10

I1II

~

.05

II/

~
I-

I-

Z

'"'"::>
u
C

'"~

'""-

0

I

-"

zOJ

I1I1

OJ

.5

1/1(-1'

.1
.05

II

.01

I

.005

II

.002 0

.2

.4

1/
.6

.2

'"
'"-'

J....--"' +2SOC

lL

50
100

f-i

1.4

Inspection lots
Formed after Final
Assembly Operation

100

75

% OF PIV

Lots Proposed
for JAN
Types
(Non-TX)

Inspection Tests
to verify LTPD
Group A
Group 8
Group C

Review of
Groups A, B,
and C Data
for accept

Preparation
for
Delivery
JAN

or reject

1

Reverse-R ecovery Circuit
SO"

High temperature storage
Thermal shock
Acceleration
Hermetic seal tests

10"

~

1

--!;-

1-

100 Percent Power Conditioning

I. Measurement of specified parameters
2. Burn-in
3. Measurement of specified parameters
to determine delta and other rejects
4. Scope display evaluation
S. Lot rejection criteria based on rejects
from burn-in test

1
Inspection Lots
Formed after Final
Assembly Operation

175

2S

SO

100 Percent Process Conditioning
1.
2.
3.
4.

150

l
125

FORWARD VOLTAG~

Process
(Discrete
diodes
processi ng)

100

lL

lK

Production

50

CASE TEMPERATURE I'C)

J.-.---+125 'C

SOD

1.2

o

-+

UJ

1

\

a

____ +7S'C

200

.8

-'"
l',.

1

10

u

w
w

.005
.01

zw

+ 25'C

:>
u

..'"'"

;;

.:;

0:
0:

673 SERIES

.001
,002

.1

w

z

/

II

~' 01

Typical Leakage Current VS. PIV

.05

/1/

Z

vs. PIV

676 SERIES

50

150

100

% OF PIV

50

% OF PIV

Reverse Recovery Circuit
Current Derating Curve

IKIl

--

100

+

9901l

.'"
0:

50

+
lOll

...

CONVECTION
COOLED

Q

3-17

o

r--

...

"

Scope

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926.
:l: 1.25

I
'" 1.00

V

a

0-

H" y
~

V
,./"'

/"

~ 80

-

0:
0:

:>

...u
:>
...5
o

60
40

"

400

500

~


~

1\

......:>
:>

\

o

1\

1\

~

.

I

o

;/1

'\
\.

40

'" 20

20 40 60 80 100 120 140 160 180

~

60

C

AMBIENT (AIR) TEMPERATURE ('C)

VELOCITY OF AIR (LFMl

80

0:

20

l:i a

600

...

'" ""

0:

P

Output Current vs
Ambient (Oil) Temperature

::J
§100

C

"B~DY J ,thrOU,gh

100 200 300

v-

...~

Output Current vs
Ambient (Air) Temperature

20 40 60 80 100 120 140 160 180
AMBIENT (OIL) TEMPERATURE ('C)

Application example: The rectifier is to be used in a cabinet at 60'C with ambient
air moving at 400 LFM. The rating is reduced (Fig. 2) by a factor of 0.81 due to the
elevated temperature, but is enhanced by 2.X (Fig. 1) due to the air flow. Hence
the DC output current is 0.81 x 2, or 1.6 times the 25'C air rating.
Reverse-Recovery Circuit
lK1!

+
20V.D.C.

990n

D.U.T.

lOP.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172

TEL (617) 926·0404· FAX (617) 924·1235

3-19

PRINTED IN U.S.A.

..

673, 676 SERI ES

Typical Forward Voltage vs
Forward Current

Typical Forward Voltage vs
Forward Current

10

10
673 SERIES

S

;: '/1
VI 'I

5

I-

.2

::>

I

0::

u

~

"~
~

....

.0

~ V'

5:

/ VIII
Ii U

Z

~

676 SERIES

I-

z

.0

.00 5
.002
.00 I

"a:~

.02

I L

....

I II /

+17S'C

.01

-,'C

+Iorct
.002

I

.001

.2
.4
.6
.8
1.0 1.2
MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIRCATIONS

II I

I

.005

] II

/ 1/

.05

0

I I

+lorCL

.1

c

a:

LlL +25'C

Iii/

::>

u

:~+175'C/ if / /

.0

.2

'"a:a:

I

/

..It ~L
IVI 1/
II iLl

.5

/

11

I II
I~ +2S'C
II
-50~C

I

I

.2
.4
.6
.8
1.0
1.2
MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIRCATIONS

1.4

1.4

Typical Leakage Current vs. Voltage

.01

I-

.02

-150'~

.05
.1

<'
..:;

.2

I-

.5

1-1- I-

+~S'~-t-

Z

"'a:a:
::>

t--:: ~Ct-

u

"'
"'"
""'
Cl

j..1

10
20

J...t"

..J

50

I--l-r- +12S'C

lao
200
500

II
II
120 liD 100 90 80 70 60 50 40 30 20 10 0
% OF P.I.V.

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET' WATERTOWN, MA 02172
TEL. (617) 926.()4Q4, FAX (617) 924-1235

3·20

PRINTED IN U.S.A.

678,682,695
696 SERIES

RECTIFIER ASSEMBLIES
Three Phase Bridges, 15-25 Amp,
Standard and Fast Recovery Magnum ®
FEATURES
.• Current Rating: to 25A
• PIVs: from 100 to 600V
• Only Fused-in-Glass Diodes Used
• Recovery Times: to 500ns
• Controlled Avalanche Characteristics
• Surge Ratings: to 150A
• Aluminum Heat Sink Case, Electrically Insulated

DESCRIPTION
This series of three phase MAGNUM®
bridges offer the ultimate in high current
power supply applications. The fast
recovery series allows operation at full
power at high frequencies (up to 40KHz
squarewave), often used in choppers,
inverters and converters in aircraft,
missiles, etc., equipment.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage
....................................................... 100 to 600V
Maximum Average D.C. Output' Current .............
... See Electrical Specifications
Non-Repetitive Sinusoidal Surge (8.3ms)
.... See Electrical Specifications
Operating and Storage Temperature Range. Tc .................................... -65'C to +150'C
Thermal Resistance Junction to Ambient, All Series ............................................... 20'C/W
Junction to Case, 678, 682 Series ....... .......................
.. ..... 1.5'C/W
Junction to Case, 695, 696 Series ............................................ 3.0'C/W

MECHANICAL SPECIFICATIONS
678, 682, 695, 696 SERIES

-E~

cst+ll= ==~114IJ

B
C
0

TB '~/-~-~ir--..,.TINNJD

G

~G~

(2 PLACES)

.L
A

JJ

AC

AC

I:

Typical Weight -

AC+

E

c-r
i.{I_J.

L __

I ..l

J

A

cu.

F
H
J

K
L

Inl.

mm.

.820 MAX.
.09 DIA. TYP.
.164-.174DIA.
.365-.385
1.870-1.880
.740-.760
.370-.390
.040 TYP.
.486-.506
.115-.135
2.240-2.260

20.83 MAX.
2.29 DIA. TYP.
4.17-4.42 DIA.
9.27-9.78
47.50-47.75
18.80-19.30
9.40-9.91
1.02 TYp...·
12.34-12.85
2.92-3.43
56.90-57.40

NC

30 grams

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

nn

SEMICONDUCTOR
~ PRODUCTS

MagnUm® is a registered trademark of Unitrode Corporation

3-21

_UNITRDDE

..

678,682,695,696 SERIES

Maximum Ratings

Electrical Specifications (at 25·C unless noted)

Maximum

Maximum

Maximum
Forward

PIV
Per
Leg

Type

Voltage Drop

Per Leg

A

Volts

678-1
678-2
678-3
678-4
678-5
678-6
695-1
695-2
695-3
695-4
695-5
695-6
682-1
682-2
682-3
682-4
682-5
682-6
696-1
696-2
696-3
696-4
696-5
696·6

Standard
Recovery

Standard
Recovery

Fast
Recovery

Fast
Recovery

Leakage

Maximum

Current

Reverse
Recovery

Per Leg@ PIV
100·C
25·C
TA
/LA

100
200
300
400
500
600
100
200
300
400
500
600
100
200
300
400
500
600
100
200
300
400
500
600

Time*
ns

/LA

Average
D.C. Output

Non-Repetitive
Sinusoidal

Current
Tc - 55°C
Tc - 100·C

Surge (8.3ms)
TA - 100'C
Amps

Amps

Amps

1.2V@10A

10

200

-

25

18.5

150

1.2V@2A

5

150

-

15

9

80

1.2V@6A

10

200

500

20

14

150

1.2V@2A

5

150

500

15

9

60

*Measured in a reverse recovery circuit switching from 1.0A forward to 1.0A reverse current recovering to O.SA.

Typical Forward Voltage Per Leg
YS. Forward Current
30

+175'~1.

I-

Z

I 100.b

"'

0:
0:

'/L II

~

"'
0:
0:

0:

.5

0:

0

u.
.2

j

.1

/ II

.05

I

.02

.2

.5

~ .2
~

.1

u.

I

.05

II
J

.4
.6
.8
1
1.2
FORWARD VOLTAGE (V)

1.4

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

J

.01

o

.2

.4

II'
~~ :A"
:0 !J
-1-1-1-/
(J

(J

0

VI

u. .01

I
I

I

.002

II

.001

.2

0

II

.005

II

.6.8

/11

"' .2
B .1
o

J

J

I

.5

'"~ .02

/ 1/ I

.02

~
z

I-

/

II I III

~ .05

/I
LI 'I

~

i""'i""'V

//

0:
0:

1/ 1/ I

:::>
u

/ 1/ /
:II / I

0

'/ /

IZ

+2S'C

il/ It r---Jo·c

:::>
u

'"

~2SC
~ f.--soc
I. '/

695,696 SERIES

+17S'C+IOO;C-

!JVI

~

10

@/

682 SERIES

~ r;

10

;:

10

1'/1

678 SERIES

20

Typical Forward Voltage Per Leg
YS. Forward Current

Typical Forward Voltage Per Leg
YS. Forward Current

.4

.6

.8

1.2 1.4

FORWARD VOLTAGE (V)

1.2

1.4

FORWARO VOLTAGE (V)

3-22

PRINTED IN U.S.A.

678,682,695,696 SERIES

Typical Leakage Current VS. PIV

Typical Leakage Current VS. PIV
1

I

1

1

~

...

'----r-

-f.--"

j2S"C

SO'C

.05

...z~

--7
---

a
~

~ --

- - f--

I---+---.I+--t"~,-

~

~~

t---=t--

.5

...-

.01 _ 695,696 SERIES
,02

--~O'C

.05 _678682 SERIES
.1 ---

1____

j

,I

1/

,2

w

~2S'C

.5

0:
0:

I
J

:J

10
50

''""

«
«
w

---r-

-- ---

f--

1/

w

1./

100

500

U

1---+-+++--+--'--,
I --h~F=,-=j;:--::-'-:::'r........-; wc
r------

---r-...+----

e-

10
20

..J

'17S'C

I

SO

V

- f.--" I

100
200

I---+-l+++--+f------=b-"""'I"',2"S""C::-1

1K I---~~-r~~~-I--~~I-~

+12S'C

500

1

1K

125

100

so

75

I

25

125

% OF PIV

100
75
% OF PIV

so

25

Reverse Recovery Circuit

S{!

40

D,U.T,

lOV D,C,

1n

Current Derating Curve

Current Derating Curve
100

100

'l"'l

"'.' ,

'z"
~

'z"

696 SERIES

50

>=
«

~

0:

...

0:

o

o

tt

_. --

50
100
150
CASE TEMPERATURE ("C)
Fast Recovery Series

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEl. (617) 926·0404· FAX (617) 924-1235

3-23

678 SERIES

'1-:-1.

1'.'
~

I
~

i
o

175

"

695 SERIES

SO

...

r~

.I

L 1

'l'o,

ss·c

682 SERIES

SS'C

1

o

"

150
SO
100
CASE TEMPERATURE ('C)
Standard Recovery Series

175

PRINTED IN U.S.A.

679,680,683,684 SERIES

RECTIFIER ASSEMBLIES
Single, Phase Bridges, 10-25 Amp,
Standard and Fast Recovery Magnum™

DESCRIPTION
This series of single phase MAGNUMTM
bridge offers the designer the ultimate in
high current power supply applications.
The fast recove'ry series allows operation
at full power at high frequencies, up to
40kHz square wave, which is often used
. in chopper, inverters and converters in
aircraft, missiles, etc., equipment.

FEATURES
• Current Ratings: to 25A
• Recovery Time: to 500ns
• PIVs: from 100 to 600V
• Surge Ratings: to 150A
• Only Fused-in-Glass Diodes Used
• Controlled Avalanche Characteristics
• Aluminum Heat Sink Case, Electrically Insulated

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage
................. 100 to 600V
Maximum Average D.C. Output Current .. __
......... See Electrical Specifications
Non-Repetitive Sinusoidal Surge (8.3ms)
See Electrical Specifications
Operating and Storage Temperature Range, Te ............................ -65'C to +150'C
Thermal Resistance Junction to Ambient, 679, 683 Series .
... 20'C/W
Junction to Ambient, 680, 684 Series ..... ..................... .. ... 25'C/W
Junction to Case, 679, 683 Series
.... 2.0'C/W
Junction to Case, 680, 684 Series
'" 4.0'C/W

MECHANICAL SPECIFICATIONS
680, 684 SERIES

r-E--j

F

--.l

~

Typical Weight -

mm.

inl.

""",,,T!jf,
~~
B

NA

A

B

C
0

E
F

00'

G

.250 MAX.
.57 MAX.
.040 TYP.
.750 MAX.
.750 MAX.
•1400IA.
.09 DIA. TYP.

6.10 MAX.
14.45 MAX .
1.02 TYP.
19.05 MAX .
19.05 MAX .
3.56DIA .
2.29 DIA. TYP .

Typic,' Weight
10 grams

0.35 oun'ces
10 grams

~F-

679, 683 SERIES

.

E.., ,-G

!

r±
iCU_'~
II_

Tlb

= .L

TlNNtO

~K

-r-~

U'
:'1

Typical Weight -

A
I
0.7 Dunces

rL
-../fI-M

+-L

A
B

C
0

E
F
G
H
J
K
L
M

Ins.

mm.

.328 MAX.
.750 MAX.
.040 TYP.
1.125 MAX.
.562
1.125 MAX.
.193
.562
.500
.09 OIA. TYP.
.062
.062

8.33 MAX.
19.05 MAX .
1.02 TYP.
28.58 MAX.
14.27
28.58 MAX.
4.90
14.27
12.70
2.29 DIA. TYP.
1.57
1.57

NB

20 grams

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

n
n
L:::::J
3-24

SEMICONDUCTOR
PRODUCTS

_UNITRODE

679,680,683,684 SERIES

Electrical Specifications (at 25°C unless noted)

Maximum Ratings

Maximum

PIV
Per
Leg

Type
Standard
Recovery

Volts
100
200
300
400
500
600
100
200
300
400
500
600
100
200
300
400
500
600
100
200
300
400
500
600

679-1
679-2
679-3
679-4
679-5
679-6
680-1
680-2
680-3
6804
680-5
680-6
683-1
683-2
683-3
6834
683-5
683-6
684-1
684-2
684-3
684-4
684-5
684-6

Standard
Recovery

Fast
Recovery

Fast
Recovery

Leakage
Current

Maximum
Forward
Voltage Drop
Per Leg

Per Leg @ PIV
T, _ 25°C T, _ l00'C

Maximum
Average

D.C. Output

Non-Repetitive
Sinusoidal

Current

Surge (S.3ms)

Maximum
Reverse
Recovery
Time*

Tc-SS'C

Tc - 100'C

Til. _ 100°C

Amps

Amps

pA

pA

ns

Amps

1.2V@10A

10

200

-

25

18.5

150

1.2V@2A

2

50

-

10

6

50

1.2V@6A

10

200

500

20

14

150

1.2V@2A

5

100

500

10

6

50

*Measured in a reverse recovery circuit switching from 1.OA forward to 1.0A reverse current recovering to O.SA.

Typical Forward Voltage Per Leg
vs. Forward Current
30
20

679

SERIES

SERIES

+17S'~i
I
I
100'C

IW

c:
c:

IL /

~
Iz

_+2S'C

1// it --Jo'c

:J
U

.5
.2

.05
.02
.2

.4

.6.S

t---t-""'f-ft-+-+-j---t-...,
t---t--fl--+---H'-/r-t----t-...,

.05 f--t-f--+l'--t-+1--+-+----1
.02 f--tf-+-+-l---iH--+-+----1
1.4

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERTOWN. MA 02172
TEL. (617) 926·0404 ' FAX (617) 924·1235

.01

~/SJ
:;fj!.r

.1

/1/

«
~ .02

o
.1

V

.It
~ 0

CJ CJ

~ .05

~

1.2

.2

w

i3

...

FORWARD VOLTAGE (V)

c:
c:

~ .5 t---t--+-,~~/r{---t----t-...,

~

1

I

.5

1/

r/

II

/

~
z

:J

~ .2

/I
I II II I

.1

f--+--+--HY'l-l-/J,f--+-~

U

III /!!

0

1

c:

/ II /

0

/[/

/

'II 1/

Z

...

680, 684

0V

:i:

c:

10

/V,Ij

10

::«c:

Typical Forward Voltage Per Leg
vs. Forward Current

Typical Forward Voltage Per Leg
vs. Forward Current

LL.

.01

II

II

.005

I

/

.002
.001

I

I
II

.2

.4

.6.8

1.2 1.4

FORWARD VOLTAGE (V)
'---'---'I.L..L.J-L....L._.L..--"---.J

.2

.4

.6

.S

1

1.2

1.4

FORWARD VOLTAGE (V)

3-25

PRINTED IN U.S.A.

lEI

679,680,683,684 SERIES

Typical Leakage Current vs. PIV
.05
.1
~

I

-

...

zUJ

0:
0:

...z
:>

.

.
".
OJ

---+WC

I
I

.J

SOD
1K

I.--125

100

75

OJ

.J

__
10
20

+125°C

...v-

50
100
200

I

500
1K

50

~

I
./'
+75°C

u

"

.-'

50°C

~ .05

.5

0:
0:

I

I

680 SERIES

.005
.01
~ .02

./
_____ +25°C

.2

OJ

I
LL

" so
" 100
~

.001
.002

50°C

.05

V

UJ

Typical Leakage Current vs. PIV

./

~
.:! .1

I--""" +25°C

10

684 SERIES

.01
.02

I

.5

.:!

:>
u

Typical Leakage Current vs. PIV

.J;;c

679,683 SERIES

u

...
OJ

V

% OF PIV

+25°C

I'

J

.,,-

----+WC

I
1

10
20
50
100

I
100
75
SO
% OF PIV

-

OJ
.J

_~+125°C

125

.-

"
"

j

25

.1
.2
.5

~

--t;5°C

1

125

25

100

75

50

25

% OF PIV

Reverse Recovery Circuit

51l

10V D.C.

CUrrent Derating Curve

Current Derating Curve
100
55°C

~

l'~

680 SERIES

50

"j:

o

.

Jo ...'

,
:..
~
u

~ .1

~ /~/
U

/ II I

z

W

Typical Leakage Current vs. PIV

1

I

.5

V

...
Z

SO'C_

-+2S'C

.w

I

0:
0:

I

:>
u

10

"""

50

1
1/

w

----+75'C

"""w 100

/ II

I

1

...J

500

I----

lK

I

I

.02

I

.01
.2

.4

125

I

100

75

Y

+12S'C

50

25

% OF PIV

.6

.8

1.0

1.2

FORWARD VOLTAGE IV)

Reverse-Recovery Circuit

Current Derating Curve
100
55'C

+
....

"z
~

0:

10V D.V.

50

if.

"
o

a

50
100
150
CASE TEMPERATURE ("C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

i
1
175

3-28

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

688 SERIES

High Voltage Stacks,
Standard and Fast Recovery
FEATURES
• PIV: from lOkV to 25kV
• Surge Ratings of 20A
• Recovery Time Available: to 500ns
• Current Rati ngs: to O.6A
• Bonded Plate for Maximum Heat Transfer
• Controlled Avalanche Characteristics
• Only Fused-in-Glass Diodes Used

DESCRIPTION
This series of high power stacks has a
unique packaging design that provides
characteristics not obtainable in conventional molded epoxy packages. This series,
therefore, is ideally suited for high-voltage,
high-power applications.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage ......... .
.......................
.. .................... 10kV to 25kV
Maximum Average D.C. Output Current ...... .
...... See Electrical Specifications
Non-repetitive Sinusoidal Surge (B.3ms)
........ 20A
Operating and Storage Temperature Range, Tc
... -65'C to +150'C
Thermal Resistance Junction to Ambient
......... 25·C/W
Junction to Case ......... .
............... 1O"C/W

MECHANICAL SPECIFICATIONS
688 SERIES

1····- -

L

I

,.:.,

~B

BE

I

f_. __.-,',!
","

I

I

f~!9+
TAPPED 10-32 THREAD

f~.-~

-L-~I

~E~

A
B
C
D

E

ins.

mm.

1.140 MAX.
2.985-3.015
2.110-2.140
.740-.770
.720-.750

28.96 MAX.
75.82-76.58
53.59-54.36
18.80-19.56
1829-19.05

Add suffix R to denote Fast
Recovery version. For example,
for recovery time, trr = 500ns;

order 6SS-10R.
Typical Weight -

2.S ounces
70 grams

MARKING
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

nn

SEMICONDUCTOR

~ PRODUCTS

3-29

_UNITRODE

-

688 SERIES
Electrical Specifications (at 25'C unless noted)
Maximum
Forward

Type

688-10
688-12
688-15
688-18
688-20
688-25

Re.covery~

Current

@PIV
TA _lOO'C

Tc _lOO'C

p.A

p.A

Amps

17V@OAA
20V@OAA
25V@0.4A
30V@0.4A
34V@0.4A
42V@0.4A

10
12
15
18
20
25

Average
D.C. Output

TA -25'C

kV

Standard
And Fast

Maximum

Leakage

Current

Voltage
Drop

PIV

Maximum Ratings
Maximum

2

0.60
0.50
0.40
0.35
0.30
0.20

100

*Add suffix R to denote Fast Recovery version.

Typical Forward Voltage Per Leg
VS. Forward Current

.Typical Leakage Current VS. PIV

10

I
~O"C

.01
.02

V'/

~
z

V//

I- .. 5

~

.2

G

.1

~
c::

o

0:

~ 8~lii_

0:

U

II

.005

/

.002

II

.2

.4

""

"'"

I

+7S'C

50
100

V

200

II
.6

Y

10
20

W

..J

I

IL

.001

5

w

1/1/1/

u. .01

+2S"C

:J

:;: :;: "fo /

.02

V

.5
1

w

IP' , J,-

~ .05

.2

'z..."

IVI

w

.05
.1

;t

I-""+12S'C
.1

500
1K

.8

1

1.2

125

1.4

100

75

50

25

% OF PIV

MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

Current Derating Curve
100

\
z"

\

;::

"
a:

...

50

\

\
I

6

I

a

50

100

150

200

CASE TEMPERATURE ('C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEl. (617) 926·0404· FAX (617) 924·1235

3-30

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

697,698 SERIES

Single Phase Bridges, 7.5 Amp, Standard
and Fast Recovery
FEATURES
• Miniature High Current Assemblies
• Continuous Ratings: to 7.5A
• Surge Ratings: to 80A
• PIV's: from 100V to 600V
• Recovery Times: to 500ns
• Only Fused·in-Glass Diodes Used
• Controlled Avalanche Characteristics

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage.
Maximum Average D.C_ Output Current.
Non-Repetitive Sinusoidal Surge (8.3ms)
Operating and Storage Temperature Range.
Thermal Resistance Junction to Ambient ..
Junction to Case

OESCRIPTION
These miniature molded high-current
single-phase bridges are designed for universal application in power supplies. One
basic bridge fills current requirements up
to 7.5A, with PIV's from 100 to 600 volts and
recovery times of standard, and 500ns max.

...................... 100 to 600V
............ See Electrical Specifications
........... See Electrical Specifications
.. -65"C to +150"C
.32"C/W
. ...... lO"C/W

MECHANICAL SPECIFICATIONS
697, 698 SERIES

A
B
C

D
E
F

TYpical Weight -

ins.
0.50'.01
.032 DIA.
1.0 MIN.
.250 MAX.
. 150 TYP.
0.50'.01

GA

mm.
12.70'.25
0.81 DIA.
25.4 MIN.
6.35 MAX .
3.81 TYP.
12.70'.25

0.14 ounces
4.0 grams

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

nn

SEMICONOuCTOR

~ PROOUCTS

3-31

_UNITRODE

697,698 SERIES
Electrical Specifications (at 25'Cunless notedl

Maximum Ratings
Maximum

Maximum
Forward
Voltage Drop

PIV
Per
Leg

Type

Per Leg

Volts

Standard
Recovery

697-1
697-2
697-3
697-4
697-5
697-6
698-1
698-2
698-3
698-4
698-5
698-6

Fast·
Recovery

100
200
300
400

Leakage

1.0V@2A

5

200

1.lV@2A

5

200

Average

Maximum

Current
Per Leg @ PIV
TA - 2S'C . TA - 100'C
pA
pA

Non-Repetitive
Sinusoidal
Surge
[8.3ms)

D.C. Output
Current
Tc_SS'C
TA - 2S'C
Amps
Amps

Reverse
Recovery
Timet

ns

Amps

2.5

7.5

80

2.25

7.0

70

SOO
600
100
200
300
400
500
600

500

tMeasured in a reverse recovery .circuit switching from lA forward to lA reverse current recovering to .SA.

Typical Forward Voltage Per Leg
VS. Forward Current

Typical Forward Voltage Per Leg
vs. Forward Current
10

10

V. V

697 SERIES

V/ VV'

698 SERIES

II /1
$:

!z

"'~

.2,

"u

.1

Ill) ()

"''"

"'"u

U U

~ ~1~/fR

Q

;: ;: i- I

:: .05

;:

I

II

.005

I
I

.002

II

.001
.2

.2
.1

~.05

I II

.002

II

.4
.6
.8
1
1.2
FORWARD VOLTAGE [V)

1.4

OJ

"
'"««
'"

OJ
...J

I

II

.0

V

___ +7S'C
10

1

20

I

50
100
200

-

V

___ +12S'C

I

500
1.000

I

.001

1./
--+2S'C

.5

'"'"
u
OJ

I

II

.005

I

....Z

II /

II. .01

I

.:'!

II

/;'JfAif~
~§:O5?
?:; 1-- I

I

~.02

I

.01

I I

.5

Q

I

~.02
II.

$:
....z

I

./
SO'C

.05
.1
::(
.2

VI IIV

1

ALL SERIES

.01
.02

/1/ i//

II I If

.5

Typical Leakage Current VS. PIV

1
100

150

.2.4.6.811.21.4
FORWARD VOLTAGE (VI

50

0/0 OF PIV

Reverse Recovery Circuit
Current Derating Curve
511

+

100

-

,
, , 5S'C

,
,
" ,

411

'"
z

10V D.C.

D.U.T.

~

5V D.C.

'"oR

FREE AIR

50

I

I

1

I

, ,
" ,,

,CASE TEMP.

"

111

I

o

l
o

so

100

ISO

200

TEMPERATURE ('C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, .MA 02172
TEl. (617) 926-0404 • FAX (617) 924·1235

3-32

PRINTED IN U.SA

RECTIFIER ASSEMBLIES

700, 701 SERIES

Three Phase Bridges, 2.5 Amp, Standard
and Fast Recovery
FEATURES
• Miniature Package
• Recovery Time: to 500ns
• Surge Ratings: to 25A
• PIV: from 100 to 600V
• Controlled Avalanche Characteristics
• Only Fused-in-Glass Diodes Used

DESCRIPTION
These miniature transfer-molded highvoltage three-phase power bridges are
designed for universal application in power
supplies. One basic bridge fills current
requirements up to 2.5A. with PIV's from
100 to 600 volts and recovery times of
standard and 500ns.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage ........................... _...............................
.. ........................... 100 to 600V
Maximum Average D.C. Output Current ............................... See Electrical Specifications
Non-Repetitive Sinusoidal Surge (8.3ms) .......................... See Electrical Specifications
.......................... -65'C to +150'C
Operating and Storage Temperature Range
Thermal Resistance Junction-to-Ambient ................ _.... ...........................
... 25'C/W

MECHANICAL SPECIFICATIONS
A..r

B~1
~

~~~

Typical Weight -

I

He

I:e 1e .ell

700. 701 SERIES

J

-it+-- Tinned Copper
H

1
G...j ~

in •.
A
B

e
0
E
F

G
H

J

.310
.621
.512
.460
.255
1.030
.220
.875
.028

REF.
MAX.
MAX.
MAX.
CIA.

F

mm.
7.87
15.77
13.0 REF.
11.68 MAX .
6.48
26.16 MAX.
5.59 MAX .
2223
0.71 CIA .

0.12 ounces

3.5 grams

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

nn

SEMICONDUCTOR

~ PRODUCTS

3-33

_UNITRODE

..

.

700 701 SERIES
Electrical Specifications (at 25'C unless noted)

Maximum Ratings
Maximum

PIV
Per
Leg

Type

Leakage
Current
Per Leg@ PIV

Maximum
Forward
Voltage Drop
Per Leg

TA - 100'C

Maximum
Reverse
Recovery
Timet

I,A

I·A

ns

1.0V@0.5A

2

100

l.lV@0.5A

2

100

TA - 2S'C

Volts

Standard
Recovery

Fast
Recovery

fMeasured

In

100
200
300
400
500
600
100
200
300
400
500
600

700-1
700-2
700-3
700-4
700-5
700-6
701-1
701-2
701-3
701-4
701-5
701-6

701 SERIES

v v::

g
.2
.1

~

.05

...c

.02

g
!z
"'
0:

0:
0:

0:

I;::--t:..-

.5

c

25

2.25

20

L
1~"j87...!;lb

0::

II

.005

II

.002

;:;:. "/-

II

/ I

.001
.2

~

.2

~

.1

";:: .05

II

o

"'" .02

I

.01
.005

I

I

II

.002

I

.001

.4
.6
.B
1
1.2
FORWARD VOLTAGE (V)

1.4

;;:

VVV

.:!

IJ'/

Z

.2

...

I

./"

.5
1

0::
0:

+25'C

I

U

"'CJ
"'"
"'"

I

II

50'C

.2

:J

II /

II

,./

.05
.1

"'

-

~I.?) " "
8~~
f,i7" ;:"f.
/

'0:

II
,/

r-

II

IL

.5

0:

~

1/

.01

Vv

I

ALL SERlE!,

.01
.02.

'5

u

2.5

Typical Leakage Current vs. PIV

10

700 !lE!lIES

:J

Amps

Amps

500

Typical Forward Voltage Per Leg
VS. Forward Current

10

...
"'

TA - SS'C

Non-Repetitive
Sinusoidal
Surge
(8.3ms)

a reverse recovery circuit switching from lOrnA forward to lomA reverse current recovenng to SmA.

Typical Forward Voltage Per Leg
vs. Forward Current

z

Average
D.C. Output
Current

I
/'

10
20

..J

t

50
100

L

200

V

500
1,000

I

.4
.6
.B
1
1.2
FORWARD VOLTAGE (V)

100

150

1.4

75 ' C

+125'C

'1-

50
Q'o.OF PIV

Reverse Recovery Circuit
Current Derating Curve

1KIl
100

+
20V D.C.

r----

9901l

"

"

,

I
I
CONVECTION
COOLED

,

D.U.T.

r--

r-

-,
"
lOll

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

o

3-34

o

so
100
ISO
AMBIENT TEMPERATURE ('C)

200

PRINTED IN U.S.A.

800,801 SERIES

RECTIFIER ASSEMBLIES
Three Phase Bridges, 20-40 Amp,
High Efficiency, ESP
FEATURES
• Current Ratings: to 40A
• Recovery Time: SOns
• Surge Ratings: to 250A
• PIVs: from 50 to 150V
• Only Fused·in·Glass Diodes Used
• Exceptionally High Efficiency
• Aluminum Heat Sink Case, Electrically Insulated

DESCRIPTION
This series of three phase bridges
offers the highest efficiency possible
for applications where nothing else
will do. The series allows operation at full
power at high frequencies.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltages.
....... ...... ....... .......... ...............................
. 50 to 150V
Maximum Average D.C. Output Current.
.. See Electrical Specifications
Non·Repetitive Sinusoidal Surge (S.3ms)
.. See Electrical Specifications
Operating and Storage Temperature Range, Tc
......... -65'C to +150'C
Thermal Resistance Junction to Ambient, All Series.
.................... 20'C/W
Junction to Case, SOO Series .... ............................ ....
......... l.5° C/W
Junction to Case, SOl Series ................ ........
. . 3.0'C/W

MECHANICAL SPECIFICATIONS
800, 801 SERIES

A
B
C
0
E

F
G
H
J

Ins.

mm.

.740-.760
2.240-2.260
.365-.385
.164-.174 DlA.
.370-.390
.486-.506
.115-.135
1.870-1.880
.820 MAX.

18.80-19.30
56.90-57.40
9.27-9.78
4.17-4.42 DIA.
9.40-9.91
12.34-12.85
2.92-3.43
47.50-47.75
20.83 MAX .

ME

Typical Weight -1.0 ounce
30 grams

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

nn

SEMICONDUCTOR

~ PRODUCTS

3·35

_UNITRODE

..

800.801 SERIES
Maximum Ratings

Electrical Specifications (at 25·C unless noted)

PIV
Per
Leg
Volts

Type

ESP

800-1
800-2
800-3
800-4
801-1
801-2
801-3
801-4

Recovery

ESP
Recovery

50
100
125
150
50
100
125
150

Maximum
Forward
Voltage Drop
Per Leg

Maximum
Reverse
Leakage CUrrent
Per Leg@ PIV
T, _100·C
TA - 25°C
pA
pA

Maximum
Average
D.C. Output
Current
Tc _100 lt e
Tc - 55·C
Amps
Amps

Maximum
Reverse
Recovery
Time""
ns

Non-Repetitive
Sinusoidal
Surge (8.3ms)
TA _lOO"C
Amps

.95V@10A

20

1000

50

40

25

250

.95V@6A

10

300

50

20

16

125

*Measured in a reverse recovery circuit switching from lA forward to lA reverse current recovering to O.SA.

Forward Surge Current vs. Duration

Forward Surge Current vs. Duration

u

II

u

~ 320

~ 160

;:: 280

I-

f5

240

~

,J

~ 200

:>

u 160
5120

a.

I-

80

a

40

:>

.01

.02

140

Z

.05

.1

~ 120

00 SERIES

II
I'

...........

I

, - ~01 SERIES

!5 100
u

r-..

I-

-

.2
.5
OURATION (SEC.)

I-.l

80

~ 60

5

a

40
20

"

o
10

20

.01

.02

.05

.1.2

.5

1

10

20

DURATION (SEC.)

Current Derating Curve
0' 40

........ V-- e- 800

5 35
I-

z

30

"'

'"'"
u

25

:> 20
I-

:> 15
0..
I- 10
:>

SERIES

i"'-

801 SERIES

"""'"\

" "'-

-- I-

i

,
!

i'- ,
......... t--,

I
I

a

55
100
CASE TEMPERATURE (·C)

UNITRODE - SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

3-36

I

!

,

~
150

PRINTED IN U.S.A.

800,801 SERIES

Typical Forward Voltage Per Leg
VS. Forward Current

Typical Forward Voltage Per Leg
VS. Forward Current
100

100

....-:r;:: ~p--

1100 SERIES

50

//~

10

10

5:

5:
Z

W
0:
0:

:::>
u

/;!"
...,.
&

"f.

~ .05
0:

.2

"""t

"- .1

II

.5

.3

II I
.5 - -

(J

0:

(

:;: .2 - 0:

0:

0

"- .1

.02
.01

I

.5

c- h" "

fli-!$'1-1-8It~"
fO
5(
J""

I

.05

I
I

.1

0

I

II

.01

0:
0:

-I- OJ -/"

I

/

:::>
u

CJ

I

.~

0

L

/ II
:1

1.1

.1 .2 .3 .4 .5 .6 .7 .8.9

.7

1.1

.9

1.3

lEI

/1/ III

IZ
W

/!I II I
c-c- It" I
in
'i'/li?
II

I-

~

V::~ ~V
,/1/V

20

20

o

BOI SERIES

50

1.3

FORWARD VOLTAGE (V)

1.5

FORWARO VOLTAGE (V)

Typical Leakage Current VS. PIV

Typical Leakage Current VS. PIV
.01
.02

801 SERIES

1it

.01
.02

l

V
.1

c

T _ +2~C

1

1-1-:-

f--

<:

/'

.2

.5
I-

I-

Z

Z

J:25

W

W
0:
0:

:::>
u

0:

T = +125"C

"
0:

-

10
20

T _ -75

W

100

75
50
% OF PIV

0

:'--

..J

--

100
200

IK
125

/'

w

'"

200

L

:::>
u

20

~ 100

0

0:
0:

f..-"

T - +75"C

w 10

5?
::i'"

A=-5J

.1

I

.2

I

8 OSERI 5

T=.12~

25

lK
125

Reverse-Recovery Circuit

75
50
% OF PIV

100

----

25

Characteristic Waveform

.L

~

~

t"

\
'

\

REe

1

1

1

I,

.L
SET TIME BASE
FOR 5 NS/CM

NOTES:

1. Oscilloscope: Rise time -:::; 3n5; input impedance = Sm!.
2. Pulse Generator: Rise time C 8"s; source impedance lO!?
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITRODE" SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET" WATERTOWN, MA 02172

TEL (617) 926-0404" FAX (617) 924-1235

3-37

PRINTED IN U.S.A.

802,803 SERIES

RECTIFIER ASSEMBLIES
Single Phase Bridges, 20-35 Amp,
High Efficiency ESP Series

OESCRIPTION
This series of single phase bridges
offer the highest efficiency possible
for applications where nothing else
will do. The series allow operation at
full power at very high frequency.

FEATURES
• Current. Ratings: to 35A
• Recovery Time: SOns
• Surge Ratings: to 250A
• PIVs: from 50 to 150V
• Only Fused-in-Glass Diodes Used
• Exceptional High Efficiency
• Aluminum Heat Sink Case, Electrically Insulated

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage .
...... 50 to 150V
Maximum Average D.C. Output Current ....
.. See Electrical Specifications
Non-Repetitive Sinusoidal Surge (8.3ms)
..... See Electrical Specifications
Operating and Storage Temperature Range, Tc
....... -65'C to +150'C
Thermal Resistance Junction to Ambient, 802 Series
.. 20'C/W
803 Series ._
... 25'C/W
Junction to Case, 802 Series .
... 2.0'C/W
803 Series ................ ..
.. 4.0'C/W

MECHANICAL SPECIFICATIONS
803 SERIES

r

•

Lt-I

0

E
A
0

I

~

B

C
D

E

ins.
.735-.755
.570 MAX.
.250 MAX.
.735-.755
.139'.149 DIA.

MA

~

mm.
18.67-19.18
14.48 MAX .
5.74-6.25
18.67-19.18
3.30-3.81

Bill

C

Typical Weight -

0,35 ounces
10 grams

802 SERIES

AiliB

tr
K

Ins.

A

+

B

+-~H1~9~~L

L~
J.....j.......I~~'
,
L

I

I-G

C
D
E
F
G

H

J
K

.056-.066
.052-.072
1.115-1.135
.552-.572
.552-.572
.180 .200 DlA.
.490-.510
.750 MAX.
.302 .322
1.115 1.135

MB

mm.
1.42-1.68
1.32-1.83
28.32-28.83
14.02-14.53
14.02-14.53
4.57-5.08 DlA.
12.45-12.95
19.05 MAX .
7.67-8.18
28.32-28.83

Typical Weight - 0.70 ounces
20 grams

nn

SEMICONDUCTOR

~ PRODUCTS

3-38

_UNITRODE

802,803 SERIES

Electrical Specifications (at 25°C unless noted)

Type
ESP
Recovery

802-1
802-2
802-3
802-4
803-1
803-2
803-3
803-4

ESP
Recovery

Maximum
Forward
Voltage Drop
Per Leg

PIV
Per
Leg
Volts
50
100
125
150
50
100
125
150

Maximum Ratings

Maximum
Reverse
Leakage Current

Per Leg@ PIV
T, _ 25°C
T, _ 100°C

Maximum
Average

Maximum
Reverse
Recovery
Time*

Te _ 55°C

Non-Repetitive
Sinusoidal

D.C. Output

Surge (8.3ms)

Current

~A

ns

Amps

Te - 100°C
Amps

T, _ lOD°C

~A

.95V@10A

20

1000

50

35

22.5

250

.95V@6A

10

300

50

20

16

125

Amps

*Measured in a reverse recovery circuit switching from lA forward to lA reverse current recovering to O.SA.

Typical Forward Voltage Per Leg
YS. Forward Current

Typical Forward Voltage Per Leg
VS. Forward Current
100
S02 SERIES
50

100
S03 SERIES
50

I-;:: ~~
VI',!

20
10

5:

...
z
~

~otJ tJ
- - ...,J:!o{5

~

1

-..;...

~ .05

~0:

"f."

"- .1

if

.5

II

.01
.1

0:
0:

.5

c

(J

°

0:

0:

I

0

"-

I
I

.3

.5

r-r-

.2 1-1.1
I
.05

'"

;:

I
.7

.9

1.1

1.3

u

I

II

"

1/
.1

oJ;,

...J:! & p

F,"'
/"f. "f.I!JJ:if

1/ I

,02
.01

II

J.. . tJ

::;)

u

~d

1/ I

.2

o

...,

/

/ /
/ /

z
UJ

I

(J
~

r/ / /

...5:

II / IlL

2

0:

....:;::::: v:v

20
10

.5

.3

.9

.7

1.3

1.1

FORWARD VOLTAGE (V)

1.5

FORWARD VOLTAGE (VI

Typical Leakage Current
.01
.02

1
...

S02 SERIES

.1
.2

/"

VS.

PIV

Typical Leakage Current YS. PIV
.01
.02

I

/~t-J

z

"'0:0:

,....V
.1

I

J=+25t~

"':<'"
'~"

T _ +2S"C f--

1
...

~

1itolc
I

.2

f-

~

I--

z
UJ

'"
0:

::;)

U
W

S03 SERIES

V

::;)

T - +75°C

U

"' 10

10
20

~ 20

:<

T_+75'~ I-""

"'" 100
...J

100
200
T = +125':;"'1K
125

100

75

50

V

-

T _ +12S o C

200
1K
125

100

75

50

25

% OF PIV

25

% OF PIV

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617).924·1235

3-39

PRINTED IN U.S.A.

-

802,803 SERIES

Current Derating Curve
'0 40
"C

:3.

...z

W
0::
0::

35
30

,

S02 SERIES

25

,

::l

u 20

...
...

::l 15

"-

10 - -

"

.....
~

S03'SERIES

15

III

I"--

r---- r-...

I I
55

'"
.......

ISO

100

CASE, TEMPERATURE (·C)

Forward Surge Current vs. Duration

forwardSlirge Current vs. Duration

U

u

5... 160
140
Z
~ 120

!5100
u SO

~ 320

;:: 2S0

~ 240

r-.....

~ 200 ~

::l

...

~ 60

/

~ 40

o

u 160
~ 120
"-

I LS03

20

I-

III

o
.01

SERIES

.02

.05

.1

.2

.5

~

so

o

40

I"-

......
1

10

20

l-

'-S02 SERIES

I

o
.01

.02

.05

.1

.2

'"''
.5

10

20

DURATION (SEC.)

DURATION (SEC.)

Reverse-Recovery Circuit

,Characteristic Waveform
~

t"

~

11

I REe

!

r

i
I•

.J,
SET TIME BASE
FOR 5 NS/CM

NOTES:

1. Oscilloscope: Rise time ~ 3nsj input impedance =:= SOU.
2. Pulse Generator: Rise time ~ 8nsi source impedance Ion.
3. Current viewing resistor, non-inductive, coaxial recommend~d.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926.()4()4 • FAX (617) 924-1235

3-40

PRINTED IN U.S.A.

804 SERIES

RECTIFIER ASSEMBLIES
Doublers and Center Tap, 20 Amp,
High Efficiency, ESP
FEATURES
• Current Rating: to 20A
• Aluminum Heat Sink Case, Electrically Insulated
• Recovery Time: Sans
• Surge Ratings of 250A
• PIVs: from 50 to 150V
• Only Fused-in-Glass Diodes Used
• Exceptional High Efficiency

DESCRIPTION
This series of doublers and center tap
rectifiers offer the ultimate in high
efficiency application. The rectifiers are
particularly suited to switching regulator
supplies where very fast recovery time
and low forward drop are of prime
importance.

ABSOLUTE MAXIMUM RATINGS
Peak I nverse Voltage ..
Maximum Average D.C. Output Current
@ Tc = +55·C
@ Tc = +100·C .................. .
Non-Repetitive Sinusoidal Surge (8.3ms)
@ TA
+100·C ....... .
Operating and Storage Temperature Range. Tc
Thermal Resistance Junction to Ambient .
Junction to Case ....

....... 50 to 150V
.......... 20A
.... 14A

=

.....................
....... 250A
.... -65·C to +150·C
..20·C/W
......... 6.0·C/W

Electrical Specifications (at 25·C unless noted)
Maximum

Type

ESP
Recovery

804-1
804-2
804-3
8044

leakage

Maximum
Forward

PIV
Per
Leg
Volts
50
100
125
150

Current (pAl
Per Leg@ PIV
T, _ lOO'C
TA _ 25°C

Voltage Drop
Per Leg

.95V@lOA

Maximum
Reverse
Recovery

Time*

pA

pA

ns

10

SOD

50

*Measured in a reverse recovery circuit switching from lA forward to lA reverse current recovering to O.5A.

MECHANICAL SPECIFICATIONS
804 SERIES

MF

AC

:~~~ CIA.
(2 PLACES)

"D"

.

"P"

.

~

"N"

.

I'I1II

.1

I

.1

+

tAC

..312
302

-L& 11
I

!j

11----.. . .
4n .6:AX.

1,;' ,

AC

.115

AC

loll
~I

AC

Typical Weight -0.35 ounces

Dimensions in inches.

MARKING
Alternating Current Input
Cathode - Positive Output
Anode - Negative
Part number is printed on the body.

I

10 grams

t Add

suffix P, N, or 0 for terminal
configuration P, N, or D.
For example, for center tap
configuration, P, order B04-'P

nn

SEMICONOUCTOR

~ PRODUCTS

5/80

3-41

_UNITRODE

..

804 SERIES

Forward Surge Current vs. Duration

! I

U

: I

5 160
140
z

120

0:.

g; 100

u

I-

I-

z

I

:---,..,

I

I,

80

r-o..

,i

~ 40

I

20

i

/

1

L 804 SERlE 51

I

o
.01

.02

.1

.05

I

III

.2

.5

'"

u 20

I

,

I

:-t-

I

.'
,

0:

I-

!

30

c: 25

i

i

40
35

UJ

I

~ 60

o

u

":0-

I

IUJ

Current Derating Curve

I

I

'"
Q.

,

0

5

'"

I
10

10

r-

i

15

I-

:

804 SERIES

rr- t-.

........

r--

I I
I I

20

55

DURATION (SEC.)

100

150

CASE TEMPERATURE FC)

Reverse-Recovery Circuit

Characteristic Waveform
t ..

~

---

1\

I,'

'REe

1\

!

1

r

I,

,/
SET TIME BASE
FOR 5 NS/CM

NOTES:
1. Oscilloscope: Rise time:::;; 3nsj input impedance = son.
2. Pulse Generator: Rise time ~ 8nsi source impedance 10Q.
3. Current viewing resistor, non-inductive, coaxial recommended.

Typical Forward Voltage Per Leg
vs. Forward Current
100

Typical Leakage Current vs. PIV
.01
.02

v.~~

50

I

//r:;
20

.1

10

V

~

II II /

I-

Z

UJ

0:
0:

-c-- Il<'>

'"
U

~ .05

~0:

.2

u.

.1

o

1

i
I

.5

I

II

.01

.1

.3

II

I

I

I

/"

I-

J=+25·L

UJ.
0:
0:

f~
.<'>
i- Iil-/P

1-/7

A=-5Jc

Z

I

<.>

/'

.2

'"
U
UJ

"
'"
 100
C

0:

~
I

50

I /

~
0:

20

~

10

1

.01
.02

II II
/ /

...

/

UNITRODE ' SEMICONDUCTOR PRODUCTS
S80 PLEASANT STREET, WATERTOWN, MA 02172
TEL. (617) 926-

2

"'0:0:

8 ;;., 55

I

/
/

l L

/ /I I

o

I I

I

.25
.5
.75
1
1.25
MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

JAN1~S600

1.5

/
50'C

JAN1N5603

./

____ +25'C

I

--

 100

II / / II
1 0

'II I

~ ?OO

IV!
I""' ""' ~~f~

 100

/ VI
II II I

~ lK

/ VI

Z

V/; V

2K

/J '/1
VI I

oS
... 500

C

JAN1N5600

5K

SK
2K

Energy
Absorption

~A

Typical Forward Voltage
VS. Forward Current
10K

Maximum
Reverse
Transient

Capacitance
@ V, = 100V
Min.
Max.

i1i

..J

10
20
50
100
200
500
IK

1.5

125

3-44

100

75
50
% OF PIV

./'
+75'C

V
125'C

25

PRINTED IN U.S.A.

JAN IN5597 JAN IN5600 JAN IN5603

Typical Leakage Current VS. PIV

--

Current Derating Curve
100

.001
.002

JAN1NSS97

\
L

.005
.01
.02

"zj::

50'C

1

'"

zUJ

.05
.1
:> .2

'"'"
0

'"
"''"

o

I

o

L

2

\

:\
\

!j:;"s·c

.5

\

50

'"'#

I-

"'"
'"

\

SO
100
150
CASE TEMPERATURE ('C) .

200

!---+7S'C

...J

10
20
SO

100

J

I

~S'C
J

V1
125

100

75
SO
%OF PIV

Oiscrete diode inspection lot.

25

..

+

100% Burn·ln of discrete diodes

'I. Measurement of specified parameters

100% process conditioning of dis- ..
crete diodes

2. Reverse bias burn-in

1. High-temperature storage

2. Thermal Shock (temperature eycling)

3. Reverse-recovery time

I

3. Measurement of specified parameters to
determine delta

~

4. Lot rejection criteria

Preparation for delivery

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926-0404 • FAX (617) 924-1235

based on

rejects

from burn-in test

of groups A,
8, and C data for lot
accept or reject.
Review

3-45

H

Assembly and encapsulation of

discrete diodes into ,bridge assembly

I

1
Inspection test to verify LTPD
Group A

Group B
Group C

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

JAN
JAN
JAN
JAN

Single Phase Bridges, 25 Amp,
Military Approved
FEATURES
• Qua Ii tied to MIL-S-19500 /446
• Current Rating: to 25A
• PIV: from 100 to 600V
• Surge Ratings ot 150A
• Only Fused-in-Glass Diodes Used
• Controlled Avalanche Characteristics
• Aluminum Heat Sink Case. Electrically Insulated

SPA25
SPB25
SPC25
SPD25

DESCRIPTION
This series of military high-current
single-phase bridges offer the utmost in
reliability as required in military system
designs. This series is assembled with
diodes which have been subjected to
100% screening tests.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage .......................... .
Maximum Average D.C. Output Current
@ Te = 55'C .
@ Te = 100'C .
Non-Repetitive Sinusoidal Surge (B.3ms)
@ Te = 55'C ...
Operating and Storage Temperature Range. Tc ..
Thermal Resistance Junction to Ambient.
Junction to Case .

Dimensions

.......... 100 to 600V

Ltr

INCHES
MIN.

............. 25A
..... 15A
150A
............... -65'C to +150'C
.... 20'C/W
....... 2.S'C/W

C,
C,
C,
C.
~;D,

QD2
~'>DJ
~~D~

('IDs
H,
H,
H,
H.
L,
12
L,
L.
Ls
W

,552
,624
,312
,495
.IB9
.057
.10B
,141
.225
,669
.300
.040
.042
.370
.307
.089
.132
.026
1.104

MAX.

MILLIMETERS
MIN,
MAX.

,572
.760
,3BO
.512
.195
.067
.1IB
,151
.235
1.060
.500
,060
.062
.560
.365
.099
,142
.036
1,144

14.02
15.B5
7.92
12,57
4.BO
1.45
2.74
3.58
5.72
17.53
7.62
1.02
1.07
9.40
7.80
2.26
3,35
.66
28.04

14.53
19.30
9.65
13.00
4.95
1.70
3.00
3.84
5.97
26.92
12.70
1.52
1.57
14.22
9.27
2.49
3.61
,91
29,06

-'_';'MECHANICAL SPECIFICATIONS

SPA25 SPB25 SPC25 SPD25

' C
[~
- - wC1

1

METAL

fMI
I

I

H

I
..J

H

~

J

,"

SEE NOTE 2

VIEW B-B

SEE

'DETAIL
'I'

i 'I'! iii i I : ~
I

,.L..-

*----.L

"D.t,;:
SEE l o r
NOTE 1

H2r~Jloos]

LSEE NOTE 3 B
L.:... s~ NOTE~ ---1

SEE/t::::±i:::i:±::>
NOTE 5

NOTES:
1. Terminals shall be hot tin dipped or silver plated.
-2. Polarity shall be:.marked on terminal side of device.
3. Point at which Tc is read (must be in metal part of case).
4. Locating pin shall be adjacent to positive terminal.
5. Insulating sleeve shall be alumina (AL 2 0 3). or equivalent.

nn

SEMICONDUCTOR

~ PRODUCTS

_UNITRODE

JAN SPA25 JAN SPB25

JAN SPC25

JAN SPD25

Electrical Specifications (at 25°C· unless noted)

Volts

JAN
JAN
JAN
JAN

Maximum Leakage
Current

Reverse·
Recovery
Timet

Maximum

I

Minimum

100
200
400
600

SPA25
SPB25
SPC25
SPD25

Maximum

Peak
Forward
Voltage
Drop*

PIV
Per
Leg

Type

0.9V

Per Leg @ PIV
Tc = 25°C
pA

pS

l.4V

Tc =IOO'C
pA

2

2

150

@39A(pk)

*Peak forward voltage drop is measured at a pulse width of B.3ms.
tMeasured in a reverse recovery circuit switching from O.SA forward to 1.0A reverse current recovery to a.SA.

Typica I Forward Voltage. Per Leg
vs. Forward Current

Typical Leakage Current vs. PIV

50
20

i

10

Ir
Ir

W
Ir
Ir

~

50

'\

Ir

;J'.

1,\

'\

w

""

a

""w

Ir

";:
0

./
...---- +25'C

:>
u

:>
u

"-

.'\,.

"z

.2
.5

w

'\.

50'C

.1

z

z

Ir

.01
.02
.05

I-

:!:
I-

Current Derating Curve
100

,/

...J

.5
.2

/'

___ +75'C
10
20
50
100
200
500

.1

o

o

50

100

150

175

CASE TEMPERATURE (OC)

./
_+125°C

IK

125

100

75

50

25

% OF PIV

.05
.2

.4

.6

.8

1

1.2 1.4

FORWARD VOLTAGE (V)

100 Percent process conditioning

100 Percent burn-jn of discrete
diodes

of discrete diodes
1. High·temperature storage

1. Measurement of specified
parameters

2. Thermal shock (temperature
cycling)

2. Reverse bias

3. Reverse-recovery time

sou

4. lot rejection criteria
based on rejects from
burn-in test

Inspection tests
to verify l TPD
Group·A
Group B·
Group C

10 "

+
_

-=-

b~Hn-in

3. Measurement of specified
parameters to determine
delta

Reverse·Recovery Circuit

Assembly,and.
encapsulation of
discrete diodes
into bridge
assembly

Review of groups
A, S, and C data
for lot accept or
reject

2SVdc
(APPROX.)

1U

NOTEJ

OSCILLOSCOPE

NOTEI

NOTES:

=

1. Oscilloscope: Rise time ~ 3ns; input impedance
son.
2. Pulse Generator: Rise time:::: 8ns; source impedance lOP..
3. Current viewing resistor, non-inductive, coaxial recommended.

UNITROOE .• SEMICONDUCTOR PROOUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (&17) 92&·0404· FAX (&17) 924·!235

3·47

PRINTED IN U.S.A.

UDA,UDB,UDC,UDD,
UDE, UDF SERIES

RECTIFIER ASSEMBLIES
.High Voltage Doorbell® Modules,
Standard and Fast Recovery
FEATURES

DESCRIPTION

•
•
•
•
•
•
•

This series of high-voltage, high-current
stacks that incorporate a uniqUe modular
design makes it ideally suited for high
power applications such as in radar systems as charger, hold-off and Clipper
diodes.

PIV: from 2.SkVto lSkV
Stackable to 600kV
Current Ratings: to 7.7A
Controlled Avalanche Characteristics
Only Fused-in-Glass Diodes Used
Recovery Time: to SOOns
Modular Package For Easy Stacking

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage
UDA, UDC Series .............................................." ................ SkV to lSkV
UDB, UDD Series ............................................................ 2.S kV to 7.SkV
UDE, UDF Series .............................................................. 2.S kV to· SkV
Maximum Average D.C. Output Current ............................... See Electrical Specifications
Non-Repetitive Sinusoidal Surge (8.3ms) ........... :.............. See Electrical Specifications
Operating and Storage Temperature Range. Tc ...................................... -6SoC to +lSOoC

MECHANICAL SPECIFICATIONS

UDA, UDB, UDC, UDD, UDE,UDF SERIES

'6~~.8~A~m;:P
-r---1

T

.

.78" MAX
19.81mm

L

=
==
1.9" DIA MAX

DD

.

--1

48.26mm

1/4· 28 x 1/4
6.S3mm

1. Polarity - Cathode connected to base.
2. Part Number - On base of unit.
TYpical Weilbt- 2.1 ounces
60srams

EXTENDER PLATE 0

5" DIA' .312"
!1-1-----127mm.7.92mm------i

T=
.093" •.OOS"
2.36mm • O.13mm

T.

'

257" •.005" DIA
6.S3mm • O.13mm

.047" RAD
1.19mm

Typical Waight - 2.75 ounces
78 grams

nL:::::::Jn

SEMICONDUCTOR
PRODUCTS

Doorbell@ is a registered trademark of Unitrode Corporation

3-48

_UNITRDDE

UDA. UDB. UDC. UDD. UDE. UDF SERIES
Electrical Specifications (at 25'C unless noted)

Maximum Ratings
Maximum Average D.C. Output
Current

Maximum
Forward

Type
Standard
Recovery

Fast
Recovery

Leakage
Current

Voltage
Drop

PIV
kV
2.5
2.5
5
5
5
7.5
7.5
10
15
2.5
2.5
5
5
5
7.5
7.5
10
15

UDE·2.5
UDB·2.5
UDE·5
UDB·5
UDA·5
UDB·7.5
UDA 7.5
UDA·10
UDA·15
UDF·2.5
UDD·2.5
UDF·5
UDD·5
UDC·5
UDD·7.5
UDC·7.5
UDC·lO
UDC·15

Maximum Maximum
Recovery

@PIV
10
5
10
5
2
5
2
2
2
10
5
10
5
2
5
2
2
2

= 75°C

Tc

with Extender

Air

Plate**

ns

Amps

Amps

1.65
1.33
1.25
1.00
0.67
4.50
2.25
3.30
1.50
1.20
1.00
0.90
0.75
0.50

7.00
3.75
5.00
2.50
2.00
1.65
1.55
1.25
0.80
5.00
2.80
4.00
1.85
1.50
1.25
1.10
0.90
0.60

-

SOO'
350t

Surge

Air

*6.00
3.00
*2.00
4.50

Non-Repetitive
Sinusoidal

-60'C

Time

~A

5V@3.00A
4V@1.50A
10V@2.20A
8V@1.00A
8V@0.82A
12V@0.70A
12V@0.60A
16V@0.50A
25V@0.33A
6V@2.20A
6V@ 1.20A
llV@1.60A
llV@0.75A
10V@0.70A
17V@0.50A
15V@0.50A
20V@0.37A
30V@0.25A

Tc

Reverse

(8.3ms)
Tc = 100'C

= 50"C
Oil
Amps

Tc

Maximum
Reverse

Transient
Energy
Absorption

Amps

JOU

200
100
200
100
30
100
30
30
30
150
80
150
80
25
80
25
25
25

7.70
4.25
5.50
2.75
2.20
2.00
1.75
1.40
0.90
5.30
3.30
4.40
2.00
1.70
1.50
1.25
1.00
0.70

es

8
4
14
8
1.5
12
2.5
3
5
8
4
14
8
1.5
12
2.5
3
5

*Measured in a reverse recovery circuit switching from l.OA forward to 1.0A reverse current recovering to O.SA.
tMeasured in a reverse recovery circuit switching from O.SA forward to 1.0A reverse current recovering to O.25A.
**These ratings are based on using "extender plates" that provide additional surface area to radiate heat. Because of possible corona effects
caused by scratches on these plates, extreme care is necessary in their handling and they are not recommended where the working voltage
exceeds 7.SKV/module. They should be carefully polished prior to installation.
tThese ratings are based on T c

= lOQOC.

Forward Pulse Current VS. Pulse Duration
10K

g

Forward Pulse Current vs. Pulse Duration

~~III~mfo:~~{[.~~;~;~;;l

;_10K~~~~~~~:::~sq!u~a~r:e~p:u:ls:e:c:u:r::r~en~I~V~S~~

Square Pulse Current vs
Duration for Non-Repetitive Pulse
(8.3

::.:-

ms:~~~v~:~~

~

I,·~ lKf!f~lJ!f~Ii!i!lIl!iilijsq~u~arieiw~a~ve~)

K

100

L-LLLWWL--L.Llllilll_LLJ..LCWL-L.LliJJlll_LLlllill

.!.uS

1.5

10.5

100.5

lms

(8.3 ms sine wave equivalent
to 3 ms square wave)

r~ ~~II~'II!II~g~I~II~
~~II~~II~I~

to 3 ms

10

Duration for Non-Repetitive Pulse

~

10ms

.1.uS

PULSE DURATION (SECONDS)

:t
z

~ 200

'"

:J 100

u

" 50
~'"

'"

~

20
10

1 0

"a: 50 I--~
'"

~

.s>- 500
Z

~ 200

IV I I

u

20
10

'"

0

~

I
/ /

I--

::l 100

u

~14~f;
; ; $/i9
II'!

/~
I I II
I /

:; lK

'1/ /

:l 100

/
I I
I
I II
II / I II
I I

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924-1235

//

'~"
'"

I
I

~

20
10

/ II / I

1.5

1

o

/

I I

.25
.5
.75
1.25
MULTIPlE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

3·49

1
1.5

'/

-l/iI!~o
f! iiJ Sf.u
I

" 50

0

/.

/

2K

/1 II

~ 200

!- 500

100.5

Typical Forward Voltage

Typical Forward Voltage
VS. Forward Current

YS. Forward Current

2K

10.5

PULSE DURATION (SECONDS)

Typical Forward Voltage

10K
5K

1.5

o

I

I I

I I
I I I
/ / I
I I

1.25
.25
.5
.75
MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

1.5

PRINTED IN U.S.A.

UDA, UDB, UDC, UDD, UDE, UDF SERIES
Typical Leakage C.urrent vs. PIV
.001
.002

;01
.02

.005
_ .01

~

"::'0:i
0:

::J

u

""''"
""''"

...J

Typical Leakage Current

UDA, UDC SERIES

5O'C

~...

.02

.05
.1
.2

z

F'C

::J

,/

""''"
""''"

.5

1----+75'C
5
10
20

50'C

I

---;;:;;5'C

Irl"
100

50

~

-'
---+25'C

.5

t-

::'0:i

'500
lK

100

125

% OF PIV

75

...
'"
~

+75'C

-

50

I

Y

.05
.1
.2

"««

I

V
+125°C

./
+25'C

I

I
I

10
20

,/

I.----"

50
100
'200
IK

+75'C

~5'C

I

500

125

25

50

50'C

I

.5

0:
::J
U

1/
-

10
20
100
200

I

50

100
150

Typical Leakage Current vS. PIV
UDE, UDF SERIES

.01
.02

I

U .

...J

PIV
"./

.05
.1
.2

"'0:0:

VS.

UDB, UDD SERIES

100

75

25

50

% OF PIV

% OF PIV

Multiple Surge Rating VS. Duration

"

z
;::

~ 100

"'~

r---..

I
!

80

::J

I

U)

c· 60

"'
"'g;
~

...o

"if.

!

I
40

II

20

o

I

!

III

[

1

I

I

1 I

10
100
CYCLES AT 60 Hz. HALF SINE WAVE

1,000

Output Current Ratio
Velocity of Air Flow

Current Derating Curve

VS.

~ 1.75

~

0:

I

I

I

100

...

r---"~--~~-+~--+-~
1.50

/

"'13 1.25
U)

u

/'

f!? .1.00

"' .75
5
i .50
...J

0.

V

";::z
'"#-

,/

,,

50

0:

~

0

a

I
"

,,

ISO
50
lao
AMBIENT TEMPERATURE ('C)

200

.25
100 200 300 400' 500 bOO
V - VELOCITY OF AIR (LFM)

Current Derating Curve

Current Derating CUl1(e

lao

100

"

";::z
'"0:

".;::z

~O

'""if.
0

150
50
100
CASE TEMPERATURE ('C)
Air Cooled

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (517) 925·0404 • FAX (517) 924·1235

,
0

200

3-50

"
,,

50

0:

#-

0

"

0

,,

50
100
150
CASE TEMPERATURE ('C)
Oil Immersed

200

PRINTED.IN U,S.A.

UFB, UFS, USB, USS SERIES

RECTIFIER ASSEMBLIES
High Voltage Stacks,
Standard and Fast Recovery
FEATURES
.. Controlled Avalanche Characteristics
• Only Fused-in-Glass Diodes Used
o High Forward and Reverse Surge Capability
• Transfer Molded for Voidless Construction
.. Modular for Easy Stacking
• PIV: from 2.5 kV to 15kV
• Recovery Times: to 500ns
• Continuous Ratings: to 2.3A

DESCRIPTION
These assemblies uniquely combine a
versatile stackable design with all the
requirements for reliable high voltage
operation. All modules are suitable for
bridge or series operations .

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, USS Series
.. 5.0 kV to 15kV
.. 2.5 kV to 10kV
Peak Inverse Voltage, USB Series.
Peak Inverse Voltage, UFS Series. ........................... .
... 5.0 kV to 10 kV
Peak Inverse Voltage, UFB Series.
......... ............. .
.. 2.5 kV to 7.5 kV
Maximum Average D.C. Output Current
.... See Electrical Specifications
.................. See Electrical Specifications
Non-Repetitive Sinusoidal' Surge (8.3ms)
..... --65°C to +l50°C
Operating and Storage Temperature Range

MECHANICAL SPECIFICATIONS
UFB, UFS, USB, USS SERIES

Ai!

j,C

.. _

--tl-~·\

10·32

.

THRD.-'

UNF.2A

~

~

B

-'

10·32

THRO.

UNF-2B

TYpical Weight: USS & UFS Series -

0

E

A
B

C
D
E

ins.
.230-.235
.980-1.10
.020-.040
.320-.330
.97-1.00

DH

mm.
5.84-5.97
24.89-27.94
0.51-1.02
8.13-8.38
24.64-25.40

1.0 ounce
28 grams

USB & UFB Series -1.1 ounce
31 grams

MARKING
Type number marked on unit.
Polarity -

Cathode connected to stud.

nn

L.::::J
3-51

SEMICONOUCTOR
PRODUCTS

_UNITRODE

UFB, UFS, USB, USS SERIES

Electrical Specifications (at 2S·C unless noted)

Maximum Ratings
Maximum

Leakage
Current

Maximum
Forward

Type
Standard
Recovery

PIV
kV
5.0
7.5
10
15
2.5
5.0
7.5
10
5.0
7.5
10
2.5
5.0
7.5

USS5
USS7.5
USS10
USS 15
USB 2.5
USB5
USB 7.5
USB 10
UFS5
UFS 7.5
UFS10
UFB2.5
UFB5
UFB 7.5

Standard
Recovery

Fast
Recovery
Fast
Recovery

@PIV
#A

Voltage Drop
9V@0.6A
13V@0.5A
17V@0.3A
25V@0.2A
5V@1.1A
9V@0.7A
13V@0.5A
17V@O.4A
12V@0.5A
18V@0.4A
23V@0.3A
6V@0.9A
12V@0.6A
18V@0.4A

Maximum
Reverse
Transient

Maximum
Reverse
Recovery
Time

Absor~.ion

ns

joules

5

-

10

-

5

500*
350t

10

500*
350t

Energy

1.5
2.5
3.0
5.0
3.0
6.0
9.0
12
1.5
2.5
3.0
3.0
6.0
9.0

Average

D.C. Output
Current
TI+, _

TA - 2S'C
AIR
Amps
0.60
0.45
0.35
0.25
1.1
0.68
0.53
0.43
0.50
0.38
0.30
0.90
0.58
0.45

saGe

Non-Repetitive
Sinusoidal

OIL
Amps
1.1
0.91
0.71
0.51
2.3
1.5
1.2
1.0
0.90
0.75
0.58
2.0
1.3
1.0

Surge
(8.3ms)
Amps
25

80

20
70

""Measured in a reverse recovery circuit switching from lA forward to lA reverse current recovering to O.SA.
tMeasured in a reverse recovery circuit switching from .SA foward current to 1A reverse current, recovery to .25A.

Output Current Ratio

vs. Velocity of Air Flow

_

" 2.50

~ 100

~ 2.25

z

z

~

~ 2.00
~ 1.75

" 1.00

0

60

V
200

300

400

500

u.

;f.

600

~

0

::>

'" Il

0
20 40 60

60

IQ.

I-

::> 40

'\

FIG.2

80

::>

i'-..

20

0

V-

'"

40

0:

FIG. 1

100

....

Z

'"0:0:

c

'"....<

Output Current
vs. Ambient (Oil) Temperature

...I

£100

0

V
o

80

....::>
....::>Q.

/

Q.

'"0:0:

::>

V

u.

o

I

'"i'-.

....

0:

;:: 1.50
...I
::>
::;: 1.25

Output Current
vs. Ambient (Air) Temperature

0

c

'"....<
0

;f.

r\

\

FIG. 3

u.

80 100 120 140 160 180

'\

\

20

0:

20 40 60 80 100 120 140 160 180

TEMPERATURE ('C)

TEMPERATURE ('C)

VELOCITY OF AIR (LFM)

'"

Application example: The rectifier is to be used in a cabinet at 60·C with ambient
air moving at 400 LFM. The rating is reduced (Fig. 2) by a factor of 0.81 due to the
elevated temperature, but it is enhanced by 2 X (Fig. 1) due to the air flow. Hence
the DC output current is 0.81 x 2, or 1.6 times the 25·C air rating.
Forward Pulse Current
10K
5K

g

2K
1K

VS.

I

f F:::::
h.

~ 500

'"0: 200

~ 100
o 50
10

.Ips

lOllS

lOOps

",In
0:

U.

~

'-....

60
I

0:...1

.......

::><

f:::::

oJ:

..::::::~

1ms

I 0u.

40

<

20

_t:.~

'"

~SB&

IOms

o

I--

I
1

10

20

CYCLES OF

3-52

UFB

1"---l
USS & UF~

Q.

DURATION

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

80

I-Z
Z-

I I r-::::::::: ~ :-.;:

I

20

5:
-'"

I

1::0-...

~~

100

I

I i

I I ' I
I':::::h USB I
1"":::,.
f::: I::::- UFB ~

Multiple Surge Current VS. Duration

Duration

SQUARE PULSE I

I

--

50 100 200
60Hz SINEWAVE

500 1000

PRINTED IN U.S.A.

UFB, UFS, USB, USS SERIES

Typical Forward Voltage
VS. Forward Current

Typical Forward Voltage
VS. Forward Current

USB SERIES

.5

"'~

.2

(J

.1

Q:

.05

:>

c

~

I

I

II

~ .02

+175'~1

.01

'L

~

+jOOjC
.002

o

.5

"'~

.2

~

.1

I

IL/II
I

II

.os

1+

75'C ~

II

.01
.005

i °iY

.002

A 1/

.001
.2

III

UFS SERIES

.002

.4

...

"'

~
:>
(J

c

II

~I'

'"~
'"
~

.02

.01
.005

+1 S'C

II

II II

1/

~

IJ

t °iV II
1

.002

rf

A II

.001
.2

.4

.6

I-

25'C

...

"''"

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

1.4

r--sh'~-t---

"",I:::: 1-"'"

+2i'l-t-

0.2

....l

0.5

~-r--,

'"
"'
(J

£.-..... 1-

75'C

~

1-"'"
100

1.~

1.0

:J

20

MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

.8

USS AND UFS SERIES

.3 0.1

....'"
"'
CI

..J

1.4

.6

.01

Z

10

1.2

1/
.4

.05

..J

1.0

5O'c

II

:t

+25'C

1/

Lh---

.005

.1

50

25'C

.02

"' .5
~ 1
:i 2

+~'c

.2

J-.

Typical Leakage Current VS. PIV

1-1---±.5d,c

~ .2

1/

.8

V

"1L

II

MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

.002

z

J

I

II

o

USB AN" UFB SERIES

.3
~

Ittj

.002
1.4

Vi J

+{OO~C

.001

CI

J

.02

.01

(J

.05

+175'C

.005

"

....05

1/,1 III/

.1

fi'"

:t .02

IJII
.2

~

.01

1/lI'rl

1/1/

.5

'" .05

I/IL J
I

III1I1

.1

c

I

.005

Z

_.2

IIII 1/1/

Typical Leakage Current VS. PIV
.001

10

g

"'~
:J

.6
.8
1.0 1.2
MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

.2
.4
.6
.8
1.0 1.2 1.4
MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

Typical Forward Voltage
VS. Forward Current

.5

z

1+2s'c

II

l

II

,.

$

...

(J

~ .02

56,d

I

IL

'/

/

1

'"~

I

1/

5
!i:
:J

+25'C

1/

.005

.001

I

1/"1/I
1/

~

ViLV

2

IN 1/1/
/ I

UFB SERIES

USS SERIES

'-

2

g
!i:

10

10

10

..

Typical Forward Voltage
VS. Forward Current

~121'C

IC
125

I I
100

75
50
%OFPIV

3-53

25

bd:::

10
20

50
100
200

..... r- "'"+125'C

II

1I

II,
125

100

75

50

25

o

% OFPIV

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

UG8, UGD, UGE, UGF SERIES

High Voltage Doorbell® Modules
Standard and Fast Recovery
FEATURES
• Current Ratings: to lOA
• PIV: 2.5 kV to 10kV
• Re<;overy Times: to 500ns
• Only Fused-in-Glass Diodes Used
• Controlled Avalanche Characteristics
• Stackable to 6001<.V
• Modular Package for Easy Stacking

DESCRIPTION
This series of high-voltage, high-current
stacks that incorporate a unique modular
design makes it particularly well-suited for
high power applications such as in radar
systems as charge, hold-off and clipper
diodes.

ABSOLUTE MAXIMUM RATINGS
Peak I nverse Voltage
UGB, UGD Series .
.. ................ 5 kV to 10 kV
UGS, UGF Series ............... ..........
. ......... 2.5kV to 7.5kV
. Maximum Average D.C. Output Current. .
.. ............... See Electrical Specifications
Non-repetitive 'Sinusoidal Surge (8.3ms)
... See Electrical Specifications
Operating and Storage Temperature Range, Tc .......................... -65'C to +150'C

MECHANICAL SPECIFICATIONS
UGB, UGD, UGE, UGF SERIES
3.487" DIA MAX
87.Smm
.316" MAX .997" DIA
8.03t

m

\ 2s;m
~tid'

'JIB" _

I
I

24mm

T/

(

'\
~.030" DI~
MAX

25.5mm

DG

1
25.42mm

1.02 0" MAX

1

Polarity - Cathode connected to base.
Part NUmber - On base of unit.

Typical Weight -

7.0 ounces
200 grams

EXTENDER PLATE G

~I-I-----------

T

(

.125....010
3.18mm ± O.25mm

8" DIA
203.20mm

:, ! ;,
.062" RAD
1.57mm

.380" DIA •.005
9.65mm ± O.13mm

Typical Weight -

r

9.25 ounces
265 grams

n .nSEMICONDUCTOR
L::::J
PRODUCTS
Doorbel,'® is a registered trademark of Unitrode Corporation

3-54

_UNITRODE

UGB, UGO, UGE, UGF SERIES

Electrical Specifications (at 25'C unless noted)

Maximum Ratings
Maximum Average D.C. Output

Current
Type

Maximum
Forward
Voltage
Drop

PIV

Maximum
Leakage
CUrrent
@PIV

kV

Standard
Recovery

UGE-2.5
UGE-5
UGB-5
UGE-7.5
UGB-7.5
UGB-lO
UGF-2.5
UGF-5
UGO-5
UGF-7.5
UGO-7.5
UGO-lO

Fast
Recovery

.A

5V@3.30A
lOV@2.50A
9V@2.20A
13V@I.60A
13V@1.50A
17V@1.10A
6V@2.50A
llV@1.80A
llV@1.60A
17V@1.20A
17V@l.10A
22V@0.S5A

2.5
5
5
7.5
7.5
10
2.5
5
5
7.5
7.5
10

10
15
5
10
5
5
10
10
5
10
5
5

Maximum
Reverse
Recovery
Time
ns

Tc

Amps

Air
with Extender
Plate**
Amps

6.60
5.00
4.40
3.30
3.00
2.30
5.00
3.75
3.30
2.50
2.25
1.75

8.25
6.25
5.50
4.10
3.75
2.85
6.25
4.70
4.10
3.10
2.80
2.20

Tc

-

500'
350t

= 60·C

=75'C
Air

= 50'C

Non-repetitive
Sinusoidal
Surge
(8.3ms)

Maximum
Reverse

Transient

Oil

Tc _100'C

Energy
Absorption

Amps

Amps

joules

10.00
7.50
6.60
5.00
5.00
3.50
8.00
6.00
4.S0
4.00
3.50
2.50

200
200
100
200
100
100
150
150
80
150
SO
80

8
14
7
20
10
14
8
14
7
20
10
14

Tc

"'Measured in a reverse recovery circuit switching from t.OA forward to t.OA reverse current recovering to a.SA.
fMeasured in a reverse recovery circuit switching from O.5A forward to t.OA reverse current recovering to O.2SA.
**These ratings are based on using "extender plates" that provide additional surface area to radiate heat. Because of possible corona effects
caused by scratches on these plates, extreme care is necessary in their handling and they are not recommended where the working voltage
exceeds 7.SKV/module. They should be carefully polished prior to installation.

Output Current Ratio
vs. Velocity of Air Flow

Current Derating Curve

~ 1.75

~

0:

100

1.50

w

l\"' 1.25
u
~ 1.00

./

~

~

.50

.~'~--+--~~-~~---r~

f-

V

"z
~

-r---~---f~-r--t-~---r--~

50

~~---+---+--"~,-,~---+---+--~

"

/

w

oJ

. . .75

V

r--

...

/

50
100
150
AMBIENT TEMPERATURE ('C)

I

200

'" .25
100

200

300

400

500

600

V ~ VELOCITY OF AIR (LFM)

100

Current Derating· Curve
r---,--.,.---,..--,-...,--,-"'---'

Current Derating Curve
100

\

"z
~

"

'.

z
;:
«

50

50

0:

"

....

\
50
100
150
CASE TEMPERATURE ('C)
Air Cooled

UNITRODE " SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERTOWN, MA 02172
TEL. (617) 926·0404, FAX (617) 924·1235

·0

200

3-55

0

50
100
150
CASE TEMPERATURE ('C)
Oil Immersed

200

PRINTED IN U.S.A

-

UGB, UGD, UGE, UGF SERIES

Typical'Forward Voltage
VS. Forward Current
10K

E

...z

~ 200

a:
:J 100
u
a:

~

~ 20
a:

Q

...,

I

10

a:
u
c

~

-

a:

o...

o

I

"

It)

C)

...z
'"a:a:

0

'"
«
«

I

"...
'"

,

I I

II I

I I

.25
.5
.75
I
1.25
MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIACATIONS

I

1.5

o

""

.;..- +2S'C

.5
I

J

-

.25
.5
.75
I
1.25
MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

10
20
so
100
200
500
lK

I :I

1.5

./
so·C

.05
.1
.2

U

Cl

/

UGB, UGD SERIES

:J:

I

/

10

/ / / I

I

I

<"
.3

--JJ~u
.u
t:fi:"'1
I
I /

50

«
~ 20

/
/

11

I

:J 100

~1lli
q: :;: .f! /1~

-

c 50

~ 200

.01
.02

/1 II

IK

. - 500

VII /
I VI I

!z

~

<"

Typical Leakage Current vs. PIV

'/

I /1,

2K

I II
1/ /1

IK
500

UGE, UGF SERIES//

SK

//; 1

2K

.§.

10K

UGB, UGD SERIES

SK

<"

Typical Forward Voltage
VS. Forward.Current

\./
+7S'C

J

.v
-

+12S'C

I
125

100

25

75
so
0/0 OF PIV

Multiple Surge Ratinll' VS. Duration

Typical Leakage Current VS. PIV
Cl

z

UGE, UGF SERIES

.01
.02

Y so·C

.05
.1
.2

1
...
z

i=

I

III

./

C

60

'"~
'"g;

40

'"a:a:

+2S'C

u

I

...o

/

1f1

:J

'"«Cl

"...
'"

I

10

« 20

~

50
100
200

...... 1"--1--

80

:J

I

I

.5

~ 100

'"~

......

I

20

o

1

10
100
CYCLES AT 60 Hz. HALF SINE WAVE

+7S'C

1.000

I

-:Kzs·c

500
IK

125

100

75
so
0/0 OF PIV

25

Forward Pulse. Current VS. PulsllJDuration ~

Forward Pulse Current vs. Pulse Duration

~~~~

-g,IOK • •

...

~IK

•

...:J 100
III

•

Q.

__~iUWL~~~~~illl~
. 1,5
10.5
lOOpS
ImS
10mS
PULSE DURATION (SECONDS)

10 ~~~WL~Llllllli_ _LLiUWL~LU~~~illl~
.1.uS
10mS
I.S
10.S
100.5
ImS
PULSE DURATION (SECONDS)

10~~LW~~~UW

.lp5

UNITRODE • SEMICONDUcTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA-02172
TEL. (617) 926.Q404 • FAX (617) 924·1235

3-56

PRINTED IN U.S.A.

RECTIFIER ASSEMBLIES

US12-US200A
USR12-USR180A

High Voltage Stacks, .125 Amp to 1 Amp,
Standard and Fast Recovery

FEATURES
• Controlled Avalanche Characteristics
• Recovery Times: to SOOns
• Transfer Molded for Voidless Encapsulation
• High Forward and Reverse Surge Capability
• PIV: from 1200 to 20, OOOV
• Only Fused-in-Glass Diodes Used

DESCRIPTION
This series of High Voltage, Medium
Current Stacks are assembled from
hermetically sealed, controlled avalanche
individual diodes. Therefore, they offer
the ultimate in reliability for such applications as clipper diodes, back swing
diodes and hold-off diodes in pulse
modulators.

ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage ............. .
............................................... 1200 to 20,000V
Maximum Average D.C. Output Current.
.. .................. See Electrical Specifications
Non-Repetitive Sinusoidal Surge (8.3ms) .... ........................ ............................................. 20A
Operating and Storage Temperature Range ..
.. ....................... -6S'C to +lS0'C

Output Current Ratio vs
Velocity of Air Flow
2.50 r---r--.-----.---.-r--,

~100

:!

";: 2.25 1--t--+--t--t--b-9

Z

0:

0:
0:

z

.
..

I-

w 80

!!: 2.00

:::l

~ 1.75 I--+-+-A-",*,'f--+--!
w
...J
!!: 1.50 I--+-+-bo'''--!

:::l

!:i

i

1.25 1-74''--+--!--t-=-+--!

I

~ 60

0..

5

o
o

v-

400

500

VELOCITY OF AIR (LFMI

600

'"

I-

Z

"

w 80
0:
a:

I'\..

:::l

'-' 60

~

I-

:::l

0..
I-

:J

\

~

1fI.

Output Current vs
Ambient (Oil) Temperature

:J

£ 100

~

0
0

w 20

l!;
100 200 300

40

Output Current vs
Ambient (Air) Temperature

\

0

20 40 60 80 100 120 140 160 180
AMB(ENT (AIR) TEMPERATURE ('C)

'" '"

40

1\

w 20
!;(

I

0:

...0
1fI.

I\.

20 40 60 80 100 120 140 160 180
AMBIENT (OIL) TEMPERATURE ('C)

nn

SEMICONDUCTOR

~ PRODUCTS

3-57

_UNITRODE

..

US12-US200A USR12-USR180A

Maximum Ratings

Electrical Specifications (at 2SoC unless noted)
Type

PIV

Maximum leakage
Current at PIV
T, _ 2S"C T, _100"C

Maximum Forward
Voltage Drop

V

I'A

I'A

1200
1500
1800
2000
2500
3000
3500
4000
4500
5000
6000
7000
8000
10000
12000
15000
18000
20000

2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2

100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100

2.0V@ 400mA
3.0V@ 400mA
3.0V@400mA
4.0V@ 400mA
5.0V@400mA
6.0V@400mA
7.0V@200mA
7.0V@200mA
8.0V@200mA
9.0V@200mA
1O.OV @ 200mA
l2.0V @ 200mA
14.0V @ 100mA
17.0V @ 100mA
21.0V@ 100mA
26.0V @ 100mA
31.0V·@ 100mA
34.0V @ 100mA

1200
1500
2000
2500
3000
3500
4000
4500
5000
6000
7000
8000
10000
12000
15000
18000

5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5

150
150
150
150
150
150
150
150
150
150
150
150
i50
150
150
150

3.3V@400mA
4.0V@400mA
5.5V@400mA
6.6V@400mA
7.7V@400mA
8.8V@200mA
9.9V@200mA
11.0V @ 100mA
l3.0V @ 100mA
15.4V @ 100mA
17.6V @ 100mA
20.0V @ 100mA
.24.0V @ 100mA
31.0V@100mA
33.0V @ 100mA
35.0V @ 100mA

Maximum Reverse
Recovery
Timet

Body
Size

Max. Avg. D.C.
Out out Current
TA -2S"C
TA - SO"C
(Air)
(Oil)

rnA

mA

SA
SA
SA
SA
S8
S8
SC
SC
SO
SO
SO
SO
SE
SE
SE
SF
SF
SF

1000
800
700
600
600
500·
400
350
330
330
300
300
250
250
200
200
180
180

2500
2000
1750
1500
1500
1250
1000
850
750
750
620
620
500
500
400
400
360
360

SA
SA
S8
S8
SC
SC
SO
SO
SO
SO
SE
SE
SE
SF
SF
SF

750
600
500
400
400
350
300
250
250
220
220
200
200
150
150
125

1850
1500
1250
1000
1000
850
750
625
625
500
500
400

ns

Standard Recovery
US 12
US 15
US 18
US 20
US 25
US 30
US35
US 40
US45A
US 50A
US60A
US 70A
US 80A
US lOOA
US 120A
US 150A
US 180A
US 200A

I

------

--

Fast Recovery
USR 12
USR 15
USR 20
USR 25
USR30
USR 35
USR 40A
USR 45A
USR 50A
USR 60A
USR 70A
USR 80A
USR 100A
USR 120A
USR 150A
USR 180A

t Measured

In

..

500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500

400
300
300

250

a reverse recovery CircuIt sWitching from lOrnA forward to lOrnA ,reverse current recovering to SmA.

Reverse Recovery Circuit
1KIl

+
20V O.C.

99011

D.U.T.

lOP.

UNITRODE - SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

3-58

PRINTED IN U.S.A.

US12·US200A USR12-USR180A

..
Typical Forward Current
vs.Forward Voltage

Typical Forward Current
vs. Forward Voltage

10

Typical Leakage Current VS. Voltage

-

.01

10

.02

-:::10"~

.05

/, 'II

g

1/ /

.5

OJ
0:
0:

a

.2

~ .0 5

3:

~ .. 0 2 _ +17S"C /

i /

.0 1

.005
.002

+T7

.2

711

.4

.2

~
0:

1.0

rt1

+ 10 c

.002

I US SERIES
.8

/

.005

'1

1.2

.001
1.4

I

+17S"C

I

o

MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

I

:£
I-

zOJ

0:
0:

:>
CJ

200
100
50

-....;:; ~

O.lJ's

I.s

1Ol-iS

---td"C

i

I

J..-Y

+12S"C

(

I
J

US AND USR SERIES

120 110 100 90 80 70 60 50 40 30 20 10 0

1.4

%OF P.i.V.

0:

-

~ 100

80

OJ

60

8

40

~

~

~

"Ul

... 20

o

~

Ims

+~S"~-

~

lOms

10

DURATION

UNITRODE· SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926·0404 • FAX (617) 924·1235

500

,--

--

Multiple Forward Surge Rating

z

-....;;:: :-...

lOOps

200

(!J

u:

~

100

I USR SERIES

US

I

20
50

~
I r -50~C

<>

~

10

..J

'"~

r---USR/

20
10

"

1/

.2
.4
.6
.8
10 1.2
MULTIPLE OF MAXIMUM FORWARD
VOLTAGE SPECIFICATIONS

r- DUR~~,~'!-N;:~6~~R'i~~~,WJEV~uLSE

2000
1000
~
500
-...;;::

«
«
OJ

+2S"C

Forward Pulse Current vs Duration
10000
5000

-

:>

OJ
(!J

/ //I

.01

1---

.5

CJ

I

/

.2

0:
0:

II 1//

...<> .02

+2S"C

-SO"C

.6

// 'II

.05

0:

;;
.:;:.
IzOJ

IV/ I

.1

<>

I I

JJ

.00 1

~

CJ

II 1
I. i

.5

;:)

I

/

I-

zOJ

1// / /

.1

<>

...

:£

I 1/

~

.1

/// V

----

100

1,000

CYCLES AT 60Hz HALF SINE WAVE

3-59

PRINTED IN U.S.A..

US12-US200A USR12-USR180A

MECHANICAL SPECIFICATIONS

r~
t--1
B

A

===CB===

c

@

-0\1+-

c:::::J

~A

c

BODY SB

B

I

()

@

~A~

A

c=:Il

D

,I

'"

i

BODY SA

}

L

B

-H-

C

BODY SC

D

D

-i l

1,~

B

~-8-

====lr----LI===J.

T

L-.J"""

E

,~

c

BODY SD

IA~I
~=IC=}=I==1
c

D

l,~

-£1-

E

i~~

BODY SE

D

l,G
-illE

l~

58

SA
Ins.
A
B

C
D

E
F

.75 MIN.
.50 MAX.
.028 QIA.
.187 MAX.

mm.
19.05
12.70
.71
4.75

Ins.

BODY SF

I

SC

mm.

Ins.

Ins.

mm.

31.75 MIN. 1.25 MIN.
31.75 MIN. 1.25 MIN.
MIN. 1.25 MIN.
31.75 MIN.
MAX. 0.85 MAX.
21.59 MAX. 1.125 MAX. 28.58 MAX.
.875 MAX. 22.23 MAX.
.032 DIA .
DIA.
.032 DIA.
.81 DIA.
.81 DIA.
.81 DlA .
.032 DIA.
.187 MAX.
4.75 MAX .
.187 MAX.
4.75 MAX .
.250 MAX .
6.35 MAX.
MAX.
.375 MAX.
9.53 MAX.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

3-60

SF

SE

SO

mm.

ins.

mm.

inl.

mm.

31.75 MIN.
1.25 MIN .
31.75 MIN. 1.25 MIN.
1.375 MAX• 34.93 MAX. 1.75 MAX.
44.45 MAX.
.032 DIA .
.81 DIA .
.032 DlA .
.81 DIA.
.250 MAX.
6.35 MAX .
.400 MAX. 10.16 MAX.
.375 MAX.
9.53 MAX .
.400 MAX. 10.16 MAX .
.078
.078
1.98
1.98

PRINTED IN U.S.A.

POWER ZENERS AND TRANSIENT VOLTAGE SUPPRESSORS

Product Selection Guides
Transient Voltage Supressors ...................................... 4-3
Transient Voltage Supressors, Bidirectional ............................. 4-4
Power Zeners ................................................. 4-5
.Datasheets ..................................................... 4-7

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

4-1

PRINTED IN U.S.A

..

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 021n_
TEL. (61~26-0404 • FAX (617) 924"1235
'

4-2

PRINTED fN U.S.A:

PRODUCT SELECTION GUIDE

POWER ZENERS AND TRANSIENT
VOLTAGE SUPPRESSORS
Transient Voltage Suppressors

TVS305
TVS310
TVS312
TVS315
TVS318
TVS324
TVS328
TVS348
TVS360
TVS410
TVS420
TVS430

5.0
10.0
12.0
15.0
18.0
24.0
28.0
48.0
60.0
100.0
200.0
300.0

5.0
11.1
13.8
16.7
20.4
28.4
30.7
54
67
111
234
342

17
8.9
7.1
5.9
4.9
3.6
3.2

5.0
10.0
12.0
15.0
18.0
24.0
28.0

6.0
11.1
13.8
16.7
20.4
28.4
30.7

53.7
30.3
23.8
19.8
16.3
11.9
10.7

5.0
6.0
12.0
15.0
24.0
30.5
40.3
51.6

5.6@ 25mA
6.5@20mA
13.6 @5mA
16.4 @ 5mA
27.0 @2mA
33.0 @ 1mA
43.7 @ 1mA
54.0 @ 1mA
33.0
43.7
54.0
191.0

1.7

1.4
.91
.42
.28

56
46
22
19
12
11
8
6
32.0
24.0
19.0
5.7

8.7
16.8
21.0
25
31
42
46
82
105
160
360
520

I.

B

9.3
16.5
21.0
25.2
30.5
42.0
46.5
9
11
22.6
26.5
41.4
47.5
63.5
78.5
47.5
63.5
79.5
265.0

Transient Voltage Suppressors
Glass Axial, Bidirectional

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172

TEL. (617) 926-0404. FAX (617) 924-1235

4-3

PRINTED IN U.S.A.

POWERZENERS AND TRANSIENT
VOLTAGE SUPPRESSORS

PRODUCT SELECTION GUIDE

Transient Voltage Suppressors
Glass Axial, Bidirectional

B

Bi-directional Zeners

AA

UDZ5815
UDZ5818
UDZ5820
UDZ5824
UDZ5827

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

4-4

PRINTED IN U.s.A.

PRODUCT SELECTION GUIDE

POWER ZENERS AND TRANSIENT
VOLTAGE SUPPRESSORS

I.

POWER ZENERS

lN4461 *
lN4462*
lN4463*
lN4464*
lN4465*

lN5063
lN5064
lN5065
lN5066
lN5067

lN4466*
lN4467'
lN4468'
lN4469'

lN5068
lN4883
lN5069
lN5070
lN5071

UZ4715

lN4959*
lN4960*
lN4961*
lN5118
lN4962*

lN4470*
lN4471 *
lN4472*
lN4473'
lN4474*

lN5072
lN5073
IN4884
lN5074
lN5075

UZ4716
UZ4718
UZ4720
UZ4722
UZ4724

lN4963*
lN4964*
lN4965'
lN4966'
lN4967'

lN4475*
lN4476*
lN4477*
lN4478*
lN4479*

lN5076
lN5077
lN5078
lN5079
lN5080

UZ4727
UZ4730
UZ4733
UZ4736
UZ4739

lN4968*
lN4969*
lN4970*
lN4971*
lN4972*

lN4480'
lN4481*
lN4482*
lN4483'

lN5081
lN5082
lN5083
lN5084
lN5085

UZ706'
UZ707'
UZ708'
UZ709'
UZ7lO'

UZ740
UZ4743
UZ745'
UZ4747
UZ750'
UZ4751
UZ4756

-

CL

UZ7706'
UZ7707'
UZ7708'
UZ7709'
UZ7710'

UZ4706
UZ4707
UZ4708
UZ4709
UZ4710
UZ4712
UZ4713

UZ756'
UZ760'

B

lN5119
lN4973*
lN5120
lN4974*
lN5121
lN4975*
lN4976*
lN5122

UZ7711
UZ7712'
UZ7713'
UZ7714'
UZ7715'

UZ7736L
UZ7740L'

UZ7740

UZ7745L'

UZ7745'

UZ7750L'

UZ7750'

UZ7,.756L'
UZ7760L'

UZ7756'
UZ7760'

• Available as JAN, JANTX & JANTXV
1. Available with High Reliability (HR2) Screening. See individual data sheet.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

4-5

PRINTED IN U.S.A.

PRODUCT SELECTION GUIDE

POWER ZENERS AND TRANSIENT
VOLTAGE SUPPRESSORS

CL

POWER ZENERS

IN4486*

UZ4775

IN4487*

UZ4782
UZ790 1

IN4488*
IN4489*
IN4490*
IN4491*
IN4492*

IN4095
IN4097
IN5096
IN5097
IN5098
IN5099
IN4098
IN5100
IN5101
IN5102

IN4493*
IN4494*
IN4495*
IN4496*

. IN5103
IN5104
IN5105
IN5106
IN5107
IN5108
IN5109
IN5110
IN5111
IN5112
IN5113
IN5114
IN5115
IN5116
IN5117

UZl10 1
UZll1 1
UZ1l2 1
UZ113 1
UZ114 1
UZ115 1
UZl161
UZ1171
UZl18 1
UZ119 1
UZ120 1
UZl22 1
UZl24 1
UZl26 1

UZ4791
UZ4110
UZ411 1
UZ4112
UZ4113

IN4981*
IN4982*
IN4983*
iN4984*
IN4985*

UZ4115
UZ4116

IN4986*
1 N4987 *
IN5127*
IN4988*

UZ4118
UZ4120

UZ7790L1

UZ7790 1

UZ7110L1

UZ7110 1

IN5128
IN4989*
IN4990'
IN4991*
IN5129
IN4992* .
IN5130
IN4993*
IN5131
IN4994*

UZ128 1
UZl30 1
UZl32 1
UZl34 1
UZl361
UZ1381

IN5132
IN4995*
IN5133
IN4996
IN5134

* Available as JAN, JANTX & JANTXV
L Available with High Reliability (HR2) Screening. See individual datasheet.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926.Q404 • FAX (617) 924-1235

4-6

PRINTED IN U.S.A.

POWER ZENERS

1N4461·1 N4496
JAN, JANTX & JANTXV

1.5 Watt/Military

FEATURES
• 5 Times Greater Surge Rating than
JAN lN3016 Series
• Low Reverse Current: to 50nA
• 1f4 Size of Conventional 1 Watt Zeners

ABSOLUTE MAXIMUM RATINGS
Zener Voltage, Vz
Continuous Current ......................... .
Surge Current (8.3ms)
Surge Power
Power ...
Storage and Operating Temperature.

DESCRIPTION
. .
Fused·in·glass, metallurgically bonded
1.5 watt zeners, qualified to MIL.S.19500/406. . . .

.. 6.8 to 200V
.. ... See Table
.. .. ............
See Table
.. ...............
.. .......... See Graph
..... See Lead Temperature Derating Curve
.. .......... -65'C to +175'C

MECHANICAL SPECIFICATIONS

JAN, JANTX & JANTXV lN4461·1N4496

r

BAND INDICATES
CATHODE END

BODY A

.i55TYP.
3.9mm

.085 MAX.
2.16mm

~C=~~==~~~~'~~I~~~~t

L

.030±.OOI
O.77m';' ±.03

.055 TYP.
1.4mm

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.
Max. Surge Power
vs. Surge Duration

Power Dissipation
vs. Lead Temperature Derating Curve

z

2.5

1--+--+--+------>0---+--+_---1

!

5K

De

2K

0:

;;:

IK

'"

"- SOD
UJ

;::
iii
Ci

IKr----r----,----,

10K

!
o

Typical Zener.lmpedance
vs. Zener Current

f----

r---S~U-~RE PUILSE-

UJ

0

1.5

1--+--1----4,'

De

UJ

~
X
;;;
"

'":oJDe

200

'"x

IDa

":>

o

i'"---..

_.

ClUJ

I

~
..

20

25

50

75

100

125

ISO

LEAD TEMPERATURE ('C)

175

20V

6.8V

;;;

..........

50

36V-.t--"'-.,-""",j,-----1

100

ll.

I

ffi

zUJ

~

lOps
lOO.us
Ims
SURGE DURATION

10

I----+-------""'f"'o..."""':-----I

N

......

L--L_~_L--L_~_L-~

o

UJ
U

z

~

100V
75V

§

lOms

1.lL----L----l~0------"w

ZENER CURRENT (rnA)

nn

SEMICONDUCTOR

~ PRODUCTS

1/79

4·7

_UNITRODE

JAN, JANTX & JANTXV 1N4461-1N4496
Electrical Specifications at 25°C

Type

::!::5%
Tolerance

1N4461
IN4462
1N4463
1N4464
1N4465
1N4466
1N4467
1N4468
1N4469
IN4470
IN4471
IN4472
1N4473
1N4474
1N4475
1N4476
1N4477
1N4478
1N4479
1N4480
1N4481
1N4482
1N4483
1N4484
1N4485
IN4486
IN4487
IN4488
IN4489
1N4490
1N4491
1N4492
1N4493
1N4494
1N4495
1N4496

Max. Zener Impedance §

Maximum Ratings
Maximum Reverse
Leakage Current

Nominal
Zener
Voltage t

Test
Current

@

@

Vz@ln

I"

I"

I"

Volts

mA

Ohms

Ohms

mA

Volts

~A

200
400
400
500
500
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100.
4000
4500
5000 .
6000
6500
7000
8000

1.0
.5
.5
.5
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25

.30
.35
.40
.45
.50
.55
.60
.65
.75
.80
.83
.95
1.0

5.0
1.0
.50
.30
.30
.30
.20
.10
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05
.05

4.08
4.50
4.92
5.46
8.0
8.8
9.6
10.4
12.0
12.8
14.4
16.0
17.6
19.2
21.6
24.0
26.4
28.8
31.2
34.4
37.6
40.8
44.8
49.6
54.4
60.0
65.6
72.8

.25
.25
.25
.25

SO.O

6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180·
200

37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.0
2.0
1.9
1.7

1.6

1.4
1.2

Z,

2.5
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
14
16
18
20
25
27
30
40
50
60
70
80
100
130
160
200

250

300
400
500
700

1000

1300
1500

Voltage "'*
Regulation
oBV Max

Z"
I"

1.1

1.3
1.4
1.5
1.7
1.8
1.9
2.1
2.3
2.5
2.7
3.0
3.3
3.6
4.0
4.4
5.0

.25
.25
.25
.25
.25
.25

5.5 .

6.0
7.0
8.0
10.0
12.0

.25
.25

'R@VR

.25
.25

.25
.25

Maximum

Maximum

Cont.

c~~~~~t

V,

Current
I'M

Volts

mA

Amps

210
191
174
157
143
130
119
110
95
90
79
11
65
60
53
48
43
40
37
33
30
28
26
23
21
19
17
16
14
13
12
11
9.5
8.9
7.9
7.2

5.0
4.5

88.0
96.0
104
120
128
144
160

Is

U

3.0
2.6
2.4
2.2
1.8
1.6
1.4
1.2
1.1

.90
.80
.75
.66
.60
.54
.48
.45
.42
.39
.35
.32
.29
.26
.23
.20
.19
.18
.16
.14
.12
.10
.08

t All

Zener Yoltages are measured with an automated test set using a 35 millisecond test time. longer or shorter test times will have a corres. "
ponding effect on the measured value due to heating effects.

§.Zener impedance is derived from the 60 cycle AC Voltage created when AC current with RMS value of 10% of DC Zener test current is superimposed on the test current.

*'" ~BV

is obtained by measuring the voltage change when the test current .is changed from 10% to 50% of Iz max under. DC conditions. During this
measurement the leads are heat sunk .375 inch from the body and maintained at 25°C.
.
.

*

Ratings shown are for peak sinusoidal surge current of 8.3 ms duration, non-repetitive. The 8.3 rns square pulse rating is 71% of the value
shown. Rating exceeds JEDEC Registered Specification.

UNITRODE • SEMICONDUCTOR PRODUCTS
5.80 PLEASANT STREET· WATERTOWN, MA 02172
TEL (611) 926-0404 • FAX (617) 924-1235

4-8

PRINTED IN U.S.A.

POWERZENERS

IN4954-IN4996
IN 5968-1N 5969
JAN, JANTX & JANTXV

5 Watt, Military

FEATURES
• 2 Times Greater Surge Rating than Conventional
10 Watt Zeners .
• Small Physical Size

DESCRIPTION
Fused-in-glass, metallurgically-bonded
5 watt zeners, qualified to MIL- S -19500/356 .

rm=nr.,

ABSOLUT£ MAXIMUM RATINGS
Zener Voltage, Vz .............................................................................................................. 5.6 to 390V
Continuous Current ............................_............................................................................... See Table
Surge Current (8.3ms) .................................................................................................... See Table
Surge Power........
.. ............................................. See Graph
.........................
.. .... See Lead Temperature Derating Curve
Power..
Storage and Operating Temperature.
.. ................ -65'C to +17S'C

~

BACKSIDE ANODE
METALLIZATION
TOP ..
AL
~;=r= 8ACX ... AU
CHIP

THI~ESS

:=l:

MECHANICAL SPECIFICATIONS

r.

BAND INDICATES
CATHODE END

J; JTX, JTXV IN4954-1N4996
J, JTX, JTXV IN5968-1N5969
175 TYP.

o

4.4mm

BODY B

.145 MAX.
3.68mm

c=:=Jc===~t===~~~\~~~I~~~~t

L

.040±.OOl
1.02mm±.03

.115 TYP.
2.9mm

THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

Max. Surge Power
vs. Surge Duration

Power Dissipation
vs. Lead Temperature Derating Curve
B

lOOK

f\
)~\.,~-> 1\0>
.f--" N<>~
~"
\

"

~

o

l :;::: Lead Length
from Body

I

o

25

~
~

Typical Zener Impedance
vs:Zener Current

~

SOK

;; 20K

~

10K

0..

5K

o

\
,\

'''''

UJ

t'....

SQUARE PULSE

" I""

~ 2K

~

~

50
75
100 125 150
LEAD TEMPERATURE ('CI

i'..

~ lK
~ 500

175

:ii 200

'"

f'"

.....

10 0

lOOns

Ip.s

10"s

1001L5
Ims
SURGE DURATION

,
IOms

nn

SEMICONDUCTOR

~ PRODUCTS

1/79

4-9

_UNITRDDE

III

. lN4954-lN4996,lN5968·lN5969, JAN, JANTX & JANTXV

Electrical. Specifications at 25'C
Maximum Zener Impedance §
Type

±5%
Tolerance

Nominal
Zener
Voltaget
Vz @ IZT

Z,.tt

Test
CUrren
Izr

Volts

mA

5.6
6.2
6.8
7.S
8.2
9.1
10.0

220
220
17S
17S
150
150
125

11

125
100
100
75
75

Zz@l n

~1inA

Maximum Reverse
Leakage Current
Voltage
Regulation

6BV §§

Ohms

Volts

1.0
1.0
.1.0
1.5
1.5
2.0
2.0
2.5
2.5
3.0
3.5
3.5

400
1000
1000
SOO
600
400
125

0.4
0.5
0.7
0.7
0.7
0.7
0.8
O.S
0.8
0.8
1.0

50
50
50

4.0
..4.5
5.0
5.0
6.0

160
165
170
175
ISO

30
33
36
39
43
47
51
56
62
68

40
40
30
30
.30

8
10
11
14
20

25
25
20
20
20

25
27
35
42
50

1N4979*
1N4980*
1N4981*
1N4982*
1N4983*

75
82
91
100
110

20
15
15
12
12

55
80
90
110
125

1N4984*
1N4985*
1N4986*
1N4987*
1N4988*
1N4989*
1N4990*
1N4991*
1N4992*
1N4993*
1N4994* .
1N4995*
1N4996

120
130
150
160
180
200
220
240
270
300

10
10
S
8
5
5
5
5
5
4

330
360
390

4
3
3

1175
·1400
lS00

lN5968*
1N5969*
. 1N4954*
1N49SS*
1N4956*
1N4957*
1N4958*
lN4959*
1N4960*
1N4961*
. 1N4962*
1N4963*·
1N4964* .
1N4965*
1N4966*
1N4967*
1N496S*
1N4969*
1N4970*
1N4971*
.lNII972*
1N4973*
IN4974*
IN4975*
1N4976*
1N4977*
1N4978*

12
13
15
16
18
20
22
24
27

Ohms

I"

65
liS

}:.

V_

I_

I_tt
~A

5000
1000
150
100
50
25
25

Volts

5000
1000
300
200
100
50
25

Maximum

Maximum Ratings
Maximum

Temperature Continuous
Coelf.
Current
Tc:.@l zr
I'M

*

%I"C

mA

Maximum
Surge
Current*
I,

"mps

4.28
4.74
5.2
5.7
6.2
6.9
7.6

.04
.04
.05
.06
.06
.06
.07

865
765
700

20
20
40

580
520
475

24
22
20

430
395
. 365
315
294

19
18
16
12
10

630

32

1.1

10
10
lO
5
5

15
10
10
5
5

8.4
9.1
9.9
11.4
12.2

.07
.07
.08
.08
.08

1.2
1.5
1.S
2.0
2.0

5
2
2
2
2

5
2
2
2
2

13.7
15.2
16.7
18.2
20.6

.085
.085
.OS5
.090
.090

264
237
216
198
176

9.0
8.0
7.0
6.5
6.0

190
200
220
230
240

2.5
2.S
3.0
3.0
.. 3.3

2
2
2
2
2.

2
2
2
2

2

22.S
25.1
27.4
29.7
32.7

.090
.095
.095
.095
.095

158
144
132
122
110

5.5
5.0
4.5
4.0
3.5

3.5
4.0
4.4
·5.0
5.5

2
2
2
2
2

2
2
2
2
2

35.S
38.8
42.6
47.1
51.7

100
92

3.2
3.0
2.8
2.5
2.2

2
2
2
2

2
2
2
2
2

56.0
62.2
69.2
76.0
83.6

.095
.095
.095
.100
.100
.100
.100
.100
.100
.100

170
190
330
350
450

'250
270
320
400
SOO
620
720
760
800
1000
1150
1250
1500
1650
1750

10
11
13
14
16

2
2
2
2
2

2
2
2
2
2

91.2
98.8
114.0
121.6
136.8

.100
.105
.105
.105
.110

39.5
36.6
31.6
29.4
26.4

500
550
650
SOO
950

1850
2000
2050 .
2100
2150

18
19
22
25
2S

2
2
2
2
2

152
167
182
206
228

.110
.115
.115
.120
.120

23.6
21.6
19.5
17.5
15.6

2200
2300
2500

32
35
40

2
2
2
2
2
2
2
2

2
2
2

251
274
297

.120
.120
.120

14.4
13.0
12.0

130
140
145
150
155

6.0
6.6
7.5
8.0
9.0

2

84

76
70
63.0
58.0
52.5
47.5
43.0

2.0
1.8
1.6
1.4
1.2
1.00
0.80
0.75
0.70
0.60
O.SO
O.SO
0.40
0.35
0.30
0.25
0.22
0.20

... Available as JAN. JANTX & JANTXV.

t All zener voltages~ are fTleasured with an automated test set ~sing a 35 msec test time. Longer or shorter test times will have a correspond·
ing effect on the measured value due to heating effects.
.
"
§ Zener impedance is derived from the 6O-cycle voltage created-when AC current with RMS.value of 10% of DC zener test current is supert_ imposed on the test current.
\f·!t§.1BV is obtained·by measuring the voltage change when the test current is changed from 10% to 50% of Iz max under DC conditions. During titis measurement. the leads are heat sunk .375 inch from the body and maintained at 25°C.
Maximum current based on 5 Watt Rating. See lead temperature derating curves for proper mounting methods.
* Figures shown are for ~ak sinusoidal surge current of 8.3 msec ·duration, non·repetltive. The 8.3 ms square pulse rating Is 71% of the value
shown.
t t These specifications apply only to JAN and JANTX

*

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JAN, JANTX, JANTXV IN5610-1N5613

POWER ZENERS.
Transient Suppressor Diodes

FEATURES
• 1S00 Watts for 1ms Pulse Power Capability
• Small Physical Size
• Designed to be Used in Mil-Std-704A Applications

DESCRIPTION
Zener diodes with high surge capability
qualified to MIL-S-19S00/434.

•

ABSOLUTE MAXIMUM RATINGS (at 25'C except where otherwise noted)
lN5610

Zener Voltage .
Forward Surge Current.
Zener Surge Current, at 2S"C .
Surge Current, at 1SO"C .

200A ...
...... ............ 32.0A ..
.... S.5A ...

Surge Power .

lN5&11

lN5&12

See Electrical Specifications ....... .
................ 200A.
........ 200A ....... .
.............. 24.0A ......... . ................ 19.0A .. .
.. ...... .... 4.SA...
.. ........... 3.2A ..
See Graph
..................... .

lN5&13

........ 200A
. ...... S.7A

..... l.OA

-6S"C to +17S"C ... .

Storage and Operating Temperature

JAN, JANTX, JANTXV 1N5610·1N5613

Double C BODY

Polarity: Cathode indicated by band.

Weight: 1.5 gram (approximate).
Mounting PositiolT: Any. Leads: Tinned Copper.·
Marking: Type number marked on unit.

nn

SEMICONDUCTOR

~ PRODUCTS

4/82

4-11

_

UN.ITRDD.E.

JAN. JANTX. JANTXV IN5610-1N5613
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)
Max,
Reverse

Type

Min. Zener
Voltage §

1N561O*
1N56U*
1N5612*
1N5613*

Vz@ IrnA
Volts
33.0
43.7
54.0
191.0

Voltaget
Vz @ Is
Volts
47.5
63.5
78.5
265.0

Max.
Forward

leakage

Max. Zener

I,@V,
Volts
30.5
40.3
49.0
175.0

.A
5.0
5.0
5.0
5.0

Amps

32.0
24.0
19.0
5.7

Typical

Voltage*
@ 100 Amps
Volts
4.8
4.8
4.8
4.8.

Current

Temperature
Coefficient

%/·C

.093
.094
.096
.100

Notes: • Available as JAN, JANTX and JANTXV.
§ Duration 01 applied current .. 3OOms, duty cycle .. 2%.
t Utilizing a pulse which decays exponentially to 50%01 the peak value-in 1ms. See graph entitled "Pulse Waveform".
:I: Peak Sinusoidal surge current of 8.3ms duration, non-repetitive.

APPLICATIONS
Voltage transients can be suppressed with series elements. shunt elements, or a
combination of both. These elements may be passive or active. For low and
medium power applications, a series resistor and zener clamp offer several
attractive features:
1. Simplicity of design
2. High reliability
3. Fast response time
The 1N5610 series of surge suppressors will suppress the fOllowing transients
defined by MIL-S-704A without the use of any series limiting resistance beyond
that provided by the source:
i. AII600V transients (category #1 on chart below)
2. All BOV transients except those generated by the main voltage regulator
(category #2 on chart below)
3. The overvoltage transients generated by the main voltage regulator (category
#3 on chart below) will also be suppressed by the 1N5610 series if:
a. A 20 ohm series limiting resistor is used, or
b. No series resistance is used but the zener is protected within 500 I'S by
using, for example, an SCR crowbar
The above statements ar~sed on the source impedances and dv / dt characteristics as given in ARlNc"Specification #413. This report entitled "Guidance for
Aircraft Electrical Power Utilization and Transient Protection" serves to further
define MIL-STD-704A for large aircraft electrical systems.

Category

Source of
Transient

Maximum

Amplitude

DUration

Min. Source
Impedance

Peak Power Rating vs. Pulse WidthlOOK
wibth is definedl as that _
50K I- 'Pulse
point at which pulse power
decays to 50% of peak

20K
10K
5K

!

a::
"';:
0

.........

.............

~

2K
1K
500

0.

'"""

"'
0.

........:..-

200
100
.01

10

.1

TIME (ms)

Pulse Waveform

~

dv/dt

""--I'-- 2

TIME (ms)
1.

Inductive
Switching

600 V

,;;; 10l's

50 ohms

2.

BUS
Switching

80 V

,;;; lOms

15 ohms

3.

Main Voltage
Regulator

80 V

~

0.2 ohms

10ms

Peak Power Ratingvs. Ambient Temperature

These Surge Suppressors are useful in a variety of other applications where semiconductor devices must function reliably in an environment subject to extremely
high but short term surges.

* ARINC stands

for Aeronautical Radio, Inc. (Annapolis, Maryland 21401)

2000

50V/ms

1500

!

a:: 1000

"'
;:
0

0.

500

a

-25

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11 Millisec~nd PUIS~

~

~

~

25
75
125
AMBIENT TEMPERATURE ('C)

175

PRINTED IN U.S.A.

TRANSIENT VOLTAGE
SUPPRESSOR

IN6102A Series

Bidirectional, 4000 Watts Peak, Military
FEATURES
• Bidirectional
• 4000W for 8 x 20 microsec pulse
• SOOW for 1 millisec pulse
• Clamping time in pico seconds

DESCRIPTION
These bidirectional, high speed, voltage suppression devices are ideally suited for applications where fast response is essential. The use of passivated die metallurgically bonded on both sides asssures long term reliability. This series is especially useful in protecting microprocessor, MOS, CMOS, TTL, Schottky TTL, ECl, 12 l and linear integrated circuits from spurious transient disturbances.

• Void less hermetically sealed glass
package
• Metallurgically bonded construction
• Designed to meet Mll-S-19S00/S16A

ABSOLUTE MAXIMUM RATINGS AT 2S0C
Stand-Off Voltage ......... S to 48V (See Characteristics Table)
Peak Pulse Power
(8 x 20 microsec pulse) .............. 4000W (See Figure 1)
Peak Pulse Power (1 millisec pulse) ....... SOOW (See Figure 2)
Peak Pulse Current. .
. ... See Characteristics Table
Breakdown Voltage ................ See Characteristics Table
Power Continuous
(TL = 7SoC, L = 'I,") .
. ......... 3W
Storage and Operating Temperature ........ -SsoC to +17SoC

MECHANICAL SPECIFICATIONS

r

l

.l75TYP.
4.4mm

IN6102A Series

r:

B BODY

.145 MAX.

3.68mm

·L

c=:=JC===~~C===~I~~}~\~~~1~~~~'t
1_

1

,975 MIN.

r--24.8mm

.300 MA~

7.62mm-

.040±.OOl
1.02mm±.03

'--- .~.~~~

~----------~~~~~~~.~--------~
These devices also available in surface mount package. See Section 11

n nSEMICONDUCTOR
L.::::J
PRODUCTS
6/87

4-13

_UNITRDDE

•

1N6102A Series

ELECTRICAL CHARACTERISTICS AT 25°C

Stand-Off
Voltage
VR

Type

Breakdown Voltage
BV

(V)

min.
(V)

nom.
(V)

max.
(V)

Test
Current
IBR

Working
Peak
Voltage
VRWM

Maximum
Leakage
Current
IR @V R

Maximum
Clamping
Voltage
Vee Max.
@ Ip'

Maximum
Peak
Current
Ip

Maximum
Temp_
Coef. of
BV

(mA)

(V)

(jlA)

(V)

(A)

(%'0C)

1N6102A

5

6.46

6.8

7.14

175

5.2

100

10.5

47.6

.050

1N6107A

8

10.45

11.0

11.55

125

8.4

1

15.6

32.0

.070

1N6111A

12

15.20

16.0

16.80

75

12.2

1

22.3

22.4

.080

1N6113A

15

19.0

20.0

21.0

65

12.2

1

27.7

18.0

.085

1N6115A

17

22.8

24.0

25.2

50

18.2

1

33.3

15.0

.090

1N6118A

24

31.4

33.0

34.6

40

25.1

1

45.7

10.9

.095

1N6120A

28

37.1

39.0

40.9

30

29.7

1

53.6

9.3

.095

1N6122A

33

44.7

47.0

49.3

25

35.8

1

64.6

7.7

.095

1N6125A

48

64.6

68.0

71.4

20

51.7

1

97.1

5.1

.100

'See Figure 2.

Figure 1. Current Impulse Waveform
100%

A

:E-

,\

'0

!O
I
f-

i'ii

'"=>
0:

tp:

50%

'"=>~
"-

I

a

]

= 8#-/5.)

'0

!O

i'iiQ:

w m

=>
()

'"

,~

'"

~

=>

"-

~ -........

~

I

~

-

w m

~

I-M ~

o

B

'"

~
l()

75

!O
I
Q:

'"~

50

Figure 4. Peak Pulse Power v·s. Pulse Duration

'"~
"-

~

=>

0..

1\

25

'"
'"I

«

0..

'"

~

'\

"I

~

a

25

50

(Pulse time duration is defined
a,s that point where the pulse
current decays to 50% of Ip.)

I

=>

a

~ r-..

Q:

"-

"-

a

EXPONENTIAL PULSE

'"~

'"'"«

~

~

'"~

'0

~

t - TIME - (ms)

~~

z
~

50

?

Figure 3. Derating Curve

"

100

Q:

t - TIME - ",s)

100

Pulse time duration (tp) "" point
where Ip decays to 50% of Ip.

I
f-

.?

0%

~urati~n ~efine~

Itime
is
as that pOint where the plIlse
current decays to 50% of Ip.
(Rise time to 100% of Ip

\

()

~Ulse

Figure 2. Pulse Waveform

75

WO

TEMPERATURE UNITRODE • SEMICONDUCTOR PRODUCTS ,
580 PLEASANT STREET. WATERTOWN. MA 02172
TEL. (617) 926·0404 - FAX (617) 924·1235

125

.1
.If..!s

~

150

1ms

tp

-

IOms

PULSE TIME

175

(Oe)

4-14

PRINTED IN U.S.A.

IN6102A Series

Figure 5.
Maximum Power vs. lead Temperature

Figure 6. Steady-State Derating Curve
for Free-Air Mounting

20

IS

2.5

16

l'?

s:~

S
s:

\

z

~
ill
0

~

~

1.5

0-

\

~

\

12

t-....

:;

r-~~o

=>

x

""

=>

:;

x

%

\

4

0

0

~~"
~o 1"-

1\

""~i'
~SO f:::::- ;-.......

100

150

200

Figure 7.
Typical Capacitance vs. Stand-Off Voltage

\

~

"-

"'"

r- r- f:::: :3:: ;;;::: ~

25

50

\

• O.SQ6

o

RaJA

AMBIENT TEMPERATURE (TA) IN 'C

"'>s

:;

TJ· TA

P(MAX)

0.5

"":;

'\

0

:;

""w

in

.

10

R9JA
1.0

:;

1\..-

0

0-

IN6102A SE RIES
= 75° CN/

,:.
Cl

'"
i;!

•

'"w

- -

w

?;
0

TJ· TL

P(MAX) •

\

14

2.0

?;

75

10,000

\
"-

.....

175

125

MAXIMUM LEAD TEMPERATURE IN 'C (TLI AT POINT
.. ~' FROM BODY (FOR MAXIMUM OPERATING
JUNCTION TEMPERATURE WITH EQUAL
TWO·LEAD CONDITIONS).

measured at zero bias

w

c.;

~ 1,000

(}

,

11:

(J

'\.
L

R6JL

measured at VR

(MM)

'CN/

0.125

( 3.17)

17.5

0.250

( 6.35)

26.5

10

0.375

( 9.53)

33.5

VR - STAND·OFF VOLTAGE -.(V)

0.500

(12.70)

42.0

0.750

(19.05)

55.0.

INCHES
0.000

8.3

UNITRODE • SEMICONDUCTOR PRODUCTS
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100

4-15

IIIII

"\

1\
100

PRINTED IN U.S.A.

TRANSIENT
VOLTAGE SUPPRESSORS

IN6461-1N6468
JAN, JANTX & JANTXV

500W, Military
FEATURES

DESCRIPTION

• 500W Power Capability for 1ms pulse
• Glass Encapsulated Device
• Clamping Time in Picoseconds

Transient voltage suppressor 'of non cavity
design and qualified to MIL·S·19500/551.
Metallurgically bonded for high reliabilty.

ABSOLUTE MAXIMUM RATINGS @ 2SoC
Stand·off Voltage, VR .......................... , ............•........... 5.0V to 51.6V
Peak Pulse Power (lms)*, PPR .........................................•....... 500W
Forward Surge Current @ tp = 8.33ms, IFsM ••••••••••••••••••••••••••••••••••• 80A(pk)
Peak Pulse Current; .............................. , ......................... see table
Breakdown Voltage ................................. ; ....................... see table
Power, Continuous (Derate @ 16.7mW/oC above T. = 25°C), PR .................. 2.5W
Storage Temperature ............................................... -55°C to +200°C
Operating Temperature ............................................. -55°C to +175°C
·See Figure 2 for Peak Pulse Power vs. Pulse Duration.

MECHANICAL SPECIFICATIONS

r

BAND INDICATES
CATHODE END

~

J. JTX & JTXV IN6461·1N6468

'IJ~~~

~

JI

c::=:J

-----:975

I

J c:::::=J

MI~~O

~24.8mm

MAX-'o.
7.62mm-

f":',

BODYB

.145 MAX.
3.68mm

t

•L

.040 ±.OO1
1.02mm±.03

'-- .115 TYP.
2.9mm

~--------~\~~~~~'----------~
THESE DEVICES ALSO AVAILABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONDUCTOR

~ PRODUCTS

4/82

4-16

.... UNITRDDE

JAN, JANTX & JANTXV IN6461-1N6468

ELECTRICAL SPECIFICATIONS @ 25°C
Max.
Max.
Clamping
Clamping
Voltage
@Ipp
Voltage
Max.
(tp Ims) Temperature
(Vc MAK.l
@Ipp
Inverse
Coefficient
ex: VIDRI
for tp 1ms
Voltage

Max. Peak Pulse Current
I_Min.
Test Current
Max.
Leakage
Stand-off Breakdown
IBR@
Voltage
Voltage
tp 300ms
Current
Duty Cycle::; 2% IR@VR
VR
@ IBR

=

Part No.

1N6461

=

=
=

tp = Ims
tr lOps
(Fig. 3)

tp 20ps
tr 8ps
(Fig. 4)

=

=

-V

C Max.

V

V

rnA

pA

A(pk)

A(pk)

V

V

%I"C

5.0

5.6

25

3000

56

315

9.0

-3.5

0.040
0.040

IN6462

6.0

6.5

20

2500

46

258

11.0

-3.2

1N6463

12.0

13.6

5

500

22

125

22.6

-3.8

0.050

1N6464

15.0

16.4

5

500

19

107

26.5

-3.8

0.060'

1N6465

24.0

27.0

2

50

12

69

41.4

-3.6

0.084

IN6466

30.5

33.0

1

3

11

63

47.5

-3.6

0.093

IN6467

40.3

43.7

1

2

8

45

63.5

-3.5

0.094

IN6468

51.6

54.0

1

2

6

35

78.5

-3.4

0.096

100
50

j
I-

Peak Pulse Power vs.
Pulse Duration

2.

Derating Curve

1.
125%

100%

'\

z(!)

~~

a~

",00
0:0

~

\

'ON
.~

e,0
",I-

"'z
;0'"

50%

0 00

a.ffi
",a.
~z

:::l-

a..

25%

'"a.

;:i
0%

o

50

~

Peak Pulse V5 Pulse
Time Characteristics)

'-

75%

30

""

ffi

---25°C (See Figure 4 for

10

'"~

ii:

~
'"
!Q
a.

\
100

\

"- I'....

"I'"

0.5

0: 0.3

0.1
200

250

lQOns

Ips

TEMPERATURE ('C)

3.

100%
PUI!e limelduratidn is deiined
as that pOint where the pulse
current decays to·50%.Df Ip .

(Rise time to 100 percent of Ip =lO,..s)

(Rise time to 100 percent of Ip =8ps)

\~

~

§
f-----'\r-----1f-----f------1

'"~

ii:

.1
~

"

IOms

Ims

Pulse time duration is defined
as that point where the pulse
current decays to 50% of I,.

'5

O%L-_ _

lOOps

Current Impulse. Waveform -,,.

4.

Current Impulse Waveform

~

~ 50%

lOps

PULSE TIME (Ip)

100% . - - - - - r - - - - - , - - - - - , , - - - - - ,

:::l
00

"-

1~

\J,e

150

"-

_ _ __ L_ _ _

o

~

__

~

0%

4

10

W

m

~

~

I'--- I'--

~

w

ro

~

t-TIME(ps)

t-TIME(ms)

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~

l_

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: TRA;NSIENTVOLTAGE
.'S~

+

L.030±.OOl
O.77mm .t.03
055 TYP
'-- . 1.4mm .

These devices also available in surface mount package. See Section 11

nn

SEMICONDUCTOR

~ PRODUCTS

6/87

4-18

..... UNITRODE

EPS~ Series

ELECTRICAL CHARACTERISTICS AT 25°C
Minimum
Breakdown
Voltage
• BV(min) @ ImA

Stand-Off
Voltage
VR

Type

(V)

(V)

Maximum
Leakage
Current
IR @ VR

Maximum
Peak
Current·
Ip

Maximum
Clamping
Voltage·
Vc @ lOA

Maximum
Temp.
Coef. of
BV

~A)

(A)

(V)

(%/°C)

EPS5

5

6.0

50

89.4

9.5

.030

EPS8

8

9.0

2

62.1

13.7

.040

EPS12

12

13.8

1

40.3

21.6

.050

EPS15

15

16.7

1

33.9

26.0

.055

EPS17

17

19.0

1

30.8

29.2

.060

EPS24

24

28.4

1

22.0

43.2

.070

EPS28

28

31.0

1

19.2

47.8

.075

EPS33

33

36.8

1

16.4

56.7

'.080

EPS48

48

54.0

1

11.2

84.3

.090

. . See Figure 1.

Figure 1. Current Impulse Waveform
100%

tp :

~ulse \ime ~ur.ti~n is ~efine~

as that point where the pulse
current decays to 50~a of I p •

~

(Rise time to 100% of Ip

"0
~

1\

l-

rE0:

0:

'"w

50%

U

~

'"

a.
I
,:;:.

0%

a

w

,

Figure 2. Peak Pulse Power vs. Pulse -Duration

w

~

= 8~s.)

-............

~

~

~

'"a.
'"a.w«

i'-

~

_1

~-

"'- .......... r-...

-............

~

_01

lOjJs

~

~

~

("s)

~
0:

w-

Figure 4.
Typical Capacitance vs. Stand-Off Voltage
1000

"'"

"0

r-.....

~

measured at zero bias

'"
'"a.w«

t\..

~

50

1'-."t\..

"

15a.
w
~
a.

IOms

1ms

100$015

tp - PULSE TIME

I-w m M

['-...

--15

~~

I
~

Figure 3. Derating Curve

8
z
~
0:

I'---..

15

a.
w

t - TIME -

lOa

~

ffi

E~PONENTIAL P~LSE

(Pulse'time duration is defined
as that point where the pulse
current decays to 50% of I p .)

25

r-..
measured at VR,

I

1\

~

a

a

25

50

75

WO

125

150

175

II

W
1

TEMPERATURE - (0C)

W
VR

• UNITRODE • SEMICONDUCTOR PRODUCTS
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WO

STAND·OFF VOLTAGE - (V)

PRINTED IN U.S.A.

TVS305· TVS430
TVS505~ TVS528

TRANSIENT
VOLTAGE SUPPRESSORS
FEATURES
• Up to SOOW for ImS Pulse Power
Capability
• Clamping Time-in Picoseconds
• Direct Applicability for all popular
Microprocessors and IC families
• Metallurgically bonded assembly systemto assure long term reliability
• Miniature glass-encased hermetically
sealed package

DESCRIPTION
Unitrode's TVS series of transient
voltage suppressors feature oxide
passivated zener type chips with full·
faced metallurgical bonds on both sides to
achieve high surge capability and negligible electrical degradation under repeated
_surge conditions. The series is especially
useful in protecting microprocessor, MOS,
CMOS, TTL, Schottky r.TL, ECl, I'L arid
linear integrated circuits-from spurioustransient disturbances.

ABSOLUTE MAXIMUM RATINGS @ 25°CTVS305·T1/S430

TVS505-TVS528

Stand-off Voltage, VA ....... .-.................... ~ ..•......................•............. 5 to 300V ................................. 5.0V to 28.0V
Peak Pulse Power (1 mS)' ...................................................................... 150W ............................................ 500W
Forward Surge Current (8.3mS half sinewave) .............................................. 15A .............................................. 50A
Peak Pulse Current ......................................................................... See Table ....................................... See TableBreakdown Voltage .......................................................................... See Table ........................................ See Table
Power, Continuous ...... : ............ ;c ........ :· .................................................... 3W ........... ; ... , .. ; ............................ 5W
Storage and OperatingTemperature ............. ; ..... ;-........................ -65 to + 175°C ............................... -65to+175°C
*See Figures 3 and 4 for Pecik Pulse Power vs Pulse Duration.

MECHANICAL SPECIFICATIONS
TVS305 Series

r

BAND INDICATES
CATHODE END

.l55TYP.·
3_9mm

BODYA

r:
- t

.085 MAX.
2.l6mm

t

+

-

_~30±.OO1
O.77mm ±.03

_o{~:rrt

THESE DEVICES ALSO AVAilABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.
MECHANICAL SPECIFICATIONS

BAND INDICATES
CATHODE END

~.

TVS505 Series

-r

175 TYp.

·4.4mm·

\.----.:

c:::::J

-II'

I

MI~OO M~

- .975
24.8mm

BODYB

7.62mm-

) c::::=::J

r-:-, i-

_145 MAX.
3.68mm

+

L

.040±_OO1
l.02mm±.03

.

,--.~.~~:

THESE DEVICES ALSO AVAilABLE IN SURFACE MOUNT PACKAGE. SEE SECTION 11.

nn

SEMICONDUCTOR
~ PRODUCTS

2180

4·20

_UNITRODE

TVS 305-TVS 430
TVS 505-TVS 528

ELECTRICAL SPECIFICATIONS @ 25'C

TVS
Pa,l No.

TVS305
TVS310
TVS312
TVS315
TVS318
TVS324
TVS328
TVS348
TVS360
TVS410
TVS420
TVS430
TVS505
TVS510
TVS512
TVS515
TVS518
TVS524
TVS528

Stand
-Off
Voltage
V.

Min.

Max.

Max.

Breakdown
Voltage
BV,minl @ ImA

leakage
Current
I.@V.

Peak
Pulse Current*
Ipp

V

V

pA

A

5.0
10.0
12
15
18
24
28
4B
60
100
200
300
5.0
10.0
12.0
15.0
18.0
24.0
28.0

6.0
11.1
13.B
16.7
20.4
28.4
30.7
54
67
111
234
342
6.0
11.1
13.8
16.7
20.4
28.4
30.7

50
2
1
1
1
1
1
1
1
1
1
1
300
5
5
5
5
5
5

17
8.9
7.1
5.9
4.9
3.6
3.2
1.7
1.4
.91
.42
.28
53.7
30.3
23.8
19.8
16.3
11.9
10.7

Max.
Clamping
Voltage*
Vc @
SA
lOA

Max.
Clamping

Max.
Clamping
Voltage*
Vc @ I"

Voltage·
Vc@lA

V

V
B.7
16.8
21.0
25
31
42
46
82
105
160
360
520
9.3
16.5
21.0
25.2
30.5
42.0
46.5

V

-

7.4
13.2
16.5
19.7
23.8
32.4
35.9

-

-

-

7.9
14.4
18.5
22.2
-

-

-

-

-

26.0
37.0
41.0

-

6For ImS pulse: see Figure 1.

Pulse Waveform

1.

G

\

z

i=

'"

j"
"0
~

....
Z

0:

~

~

0..

I 50

r"\

\

0:

~lOO
u

~.

:::>

4J

75

PULSE TIME DURATION (I,) = POINT
WHERE I, DECAYS TO 50% OF I"

4J

:::>

Derating Curve

2.
100

o0.

"'"

50

"'

Ul

-'

:>
0.

~

x
i;i

-----

0.

I

t---

0."

I-TIME (ms)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

25

4-21

o

o

50

\

'\

1\

100
150
TEMPERATURE ('C)

200

PRINTED IN U.S.A.

..

TVS305-TVS430
TVS505-TVS528

3.
10

~

EXPONENTIAL
PULSE

~

'"

0

Q.

w
V>

~

ii'

~

EXPONENTIAL
PULSE

~

"~

><

Peak Pulse Power vs_ Pulse Duration

100

'" ~

~

4_

Peak Pulse·Powervs. Pulse Duration

0.1

,.ffi

~

Q.

w
V>

~

ii'

"

.01
IO"S

10

0

. 100"S

><

;;;
Q.

'"

ImS

"'" '"

I

.::

.1

lOmS

.J.,.S

100"S

PUlSET1ME(t.. )

5.

"'" '"~
ImS

10mS

PULSETIMEIt.l

6. Clamping Voltage vs. Pulse Current

Capacitance VS. Stand·Off Voltage

10,000

100
SEE FIGURE I FOR WAVEFORM

~
(J

~

U 1000
~

"'

''"~"

MEASURED
@-ZERD BIAS-

'"

z

.

MEASURED @ V,

C3

I

;::::MEASURED @- ZERO

~

I 1...1

IN-

100

""

---

30
20

:::

0

'"0:
'"
z

10

505

.:;;
....J

TVS
505

'\.'\

(J

I

"\. r\.
M~~ukJJ@~ I~l ~~
·10

UNITRODE • SEMICONOUCTOR PROOUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926-0404 • FAX (617) 924-1235

528
525
518
515
512 f-o1--510

>

BI~S

V, --' STAND·OFF VOLTAGE -

50
40

u

>

1

100

10

1

(V)

I, -

4-22

20

50

100

PULSE CURRENT (Al

PRINTED IN U.S.A.

TVS305-TVS430
TVS505-TVS528

CHOOSING AND SPECIFYING THE PROPER TVS

The following terms are generally used in specifying Transient Voltage Suppressors (TVS):

1.

Stand-off Voltage (VR) is the highest reverse voltage at which the TVS will be non-conducting.

2.

Minimum Breakdown Voltage (BV min) is the reverse voltage at which the TVS conducts
1 milli-amp. This is the point where the TVS begins to limit the transient.

3.

Maximum Clamping Voltage (Vc max) is the maximum voltage the TVS will allow during a
transient "spike."

Figure 7 graphically shows all three terms.

lmA--------

+ ----~.ct===~::...-Uv

+
Figtlre 7

The three most important factors in choosing the appropriate TVS for an application in their order
of importance are:
1.

Pulse power (Pp) - Choose the TVS series that will handle the Transient Pulse Power.
Transient Pulse Power is equal to the clamping voltage (Vel times the peak pulse current
(ipp). The pulse duration vs. pulse power graph on the TVS data sheet can then be used to
determine the maximum allowable pulse duration. (Figure 3 or 4).

2.

Standoff voltage (VR) - From the TVS series selected, choose the device with the stand-off
voltage equal to or greater than the normal circuit operating Voltage.

3.

Maximum Clamping Voltage (V eMAx ) - Determine the clamping voltage of the device chosen for the
transient given and be sure it is below the voltage that might damage any components.

For further information see Unitrode Application Note U-79, "Guidelines for Using Transient Voltage
Suppressors.' ,

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET - WATERTOWN, MA 02172
TEl. (617) 926-0404 • FAX (617) 924·1235

4-23

PRINTED IN U.S.A.

..

AC POWER ZENERS

UDZ807 SERIES
UDZ5807 SERIES
UDZ8807 SERIES
UDZ807HR2 SERIES
UDZ5807HR2 SERIES

1,3 and 5 Watt Types

DESCRIPTION
These devices consist of two fused·in-glass
zeners brazed cathode to cathode to provide
•
zener action in both directions.

FEATURES
• Zener Characteristics in Both Directions
• 7.5 to GOV
• High Surge Ratings
• Small Physical Size

ABSOLUTE MAXIMUM RATINGS
Zener Voltage ..... .
Continuous Current
Surge Current (8.3ms) ...
Surge Power .......................... .
Power ....
Storage and Operating Temperature.

............................................................. 7.5 to GOV
............... See Tables
. ....................... See Tables
........... .see Graph
....... See Data Sheets for Related Series
(UZ8807. UZ807: and UZ5807)
....--65·C to +175·C

MECHANICAL SPECIFICATIONS
UDZB07 SERIES UDZ5807 SERIES UDZ8B07 SERIES
UDZB07HR2 SERIES UDZ5807HR2 SERIES

1 & 3 WATT 5WATT

~

--~-------c------~

MARKING: liD," followed by last 3 to 4
digits and part number.
EKBmple: 7.5 volt ±10%.
1 watt type would be

marked: "D8807",

Dimensions
3 Watt UDZ807/U0Z807HR2 Series

1 Witt UDZB807 Sari..

mm

ins.
A
B

D

.450
.085
.275
.028
.700

MAX.
MAX.

TXP.
± .001
MIN.

11.43
2.16
6.99
.71
17.78

MAX.
MAX.

A

TYP.

B
'C

± .03

0

MIN.

E

.450
.085
275
.028
.700

5 Watt UOZ5807/UOZ5807HR2

mm

illi.
MAX.
MAX.

11.43
2.16
6.99
.71
17.78

TYP.
•• 001
MIN .

Inl.

MAX.
MAX.

A
B

TYP.

C
D
E

± .03
MIN.

mm

.500 MAX.
.145 MAX.
.325 TYP.

12.70 MAX.
3.68 MAX .
826 TYP .

.040' .001
.975 MIN:

1.02' .03
24.77 MIN .

nn

SEMICONOUCTOR
~ PRODUCTS

4-24

_UNITRODE

UDZ807 SERIES UDZ5807 SERIES UDZ8807 SERIES
UDZ807HR2 SERIES UDZ5807HR2 SERIES

Electrical Specifications at 25'C
Max. Zener Imped §
Zz

Nominal
Type

±lO%

Tolerance *

Zener
Voltaget
Vz@ IZT
Voits

Test
izr

@
izr

mA

Ohms

Current

Maximum Ratings**

Maximum
Leakage @ Reverse Voltage.
±lO%
:!:5%
Current
pA

Voits

Maximum
Cont.

Maximum
Surge

i ....

CurrenU
is

Current

Voits

mA

4.9
5.4
5.9
6.6
8.6
10.8
12.9
14.4
17.3
19.4
21.6
23.7
25.9
28.8
32.4
43.2

5.2
5.7
6.2
6.9
9.1
11.4
13.7
15.2
18.2
20.6
22.8
25.1
27.4
30.4
34.2
45.6

125
115
105
95
85
63
52
47
40
35
31
28
26
24
22
15

5
4.5
3.9
3.37
2.25
1.65
1.12,
1.12
0.825
0.825
0.825
0.675
0.562
0.562
0.450
0.337

4.9
5.4
5.9
6.6
8.6
10.8
12.9
14.4
17.3
19.4
21.6
23.7
25.9
28.8
32.4
43.2

5.2
5.7
6.2
6.9
9.1
11.4
13.7
15.2
18.2
20.6
22.8
25.1
27.4
30.4
34.7
45.6

400
360
330
300
250
200
170
150
125
110
100
90
85
75
65
50

10
8
7
5
4
3
2
2
1.5
1.5
1.5
1.2
1
1
0.8
0.6

Amps

1 WATT ZENERS - Specifications apply for both directions.
UDZ8807
UDZ8808
UDZ8809
UDZ8810
UDZ8812
UDZ8815
UDZ8818
UDZ8820
UDZ8824
UDZ8827
UDZ8830
UDZ8833
UDZ8836
UDZ8840
UDZ8845
UDZ8860

7.5
8.2
9.1
10
12
15
18
20
24
27
30
33
36
40
45
60

34
31
28
25
23
17
14
12.5
10.5
9.5
8.5
7.5
7.0
6.5
6
4

6
7
8
8.5
9
14
20
23
25
35
40
45
50
62
75
125

50
30
10
3
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5

..

3 WATT ZENERS - Specifications apply for both directions.
UDZ807HR2
UDZ808HR2
UDZ809HR2
UDZ810HR2
UDZ812HR2
UDZ815HR2
UDZ818HR2
UDZ820HR2
UDZ824HR2
UDZ827HR2
UDZ830HR2
UDZ833HR2
UDZ836HR2
UDZ840HR2
UDZ845HR2
UDZ860HR2

7.5
8.2
9.1
10
12
15
18
20
24
27
30
33
36
40
45
60

75
75
75
75
65
50
40
40
30
25
25
20
20
20
15
10

500
300
200
100
10
10
5
5
5
1
1
1
1
1
1
1

3
4
4
5
5
6
8
9
10
12
15
21
21
27
37
70

*For ±5% voltage tolerance change the 3rd number from the right from 8 to 7 i.e. UDZ8807 to UDZ8707, etc.
tAli zener voltages are measured with an automated test set using a 35ms test time. Longer or shorter test times will have a corresponding
effect on the measured value due to heating effects.
§Zener impedance is derived trom the 50-cycle voltage created when AC current with RMS value of 10% of DC zener test current is superim~
posed on the test current.
**D.C. Ratings are based on the lead temperature conditions shown in the data sheets covering the UDZ8807, UDZ807, and UDZ5807
series devices. Other conditions will affect the power ratings of all the families except the 1 watt zener family. However, the surge values
given apply for any mounting conditions including printed circuit board mounting.
:t:Figures shown are for peak sinusoidal surge current of 8.3ms duration using 60 cycle AC. The 8.3ms square pulse rating is 71% of the value
shown.

Typical Reverse Surge Power
vs. Surge Duration
lOOK
50
20

~ 10K
0:

50

;:

20

UJ

o
a. 1K
~

:5

r-...

SQUARE PULSE f - -

..........

..........

r-..."-..

.......... ..........

..........

50
20

r-...
..........

5

~'ll"1' oc-r-...-..........]w~~
........./ v,;.'ll"l" s
S

II~
~s

a. 100
50
20
10

lOOns

lJl-s

10Jl-s
100Jl-s
Ims
PULSE DURATiON (S)

""

10ms

For Sinusoidal Pulse, Peak Value
is 1.4 Times Value Shown
UNiTRODE • SEMiCONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

4-25

PRINTED IN U.S.A.

UDZ807 SERIES UDZ5807 SERIES UDZ8807 SERIES
UDZ807HR2 SERIES UDZ5807HR2SERIES
Maximum Ratings··

Electrical Specifications at 25'C
Type

Nominal
Zener

Voltaget

Max. Zener I mped §
Test

Current

Maximum

Zz

Leakage @ Reverse Voltage
±10%
Current

@

Vz @ lIT

lIT

lIT

Tolerance *

Volts

mA

Ohms

5 WATT ZENERS UDZ5807HR2
UDZ5808HR2 _
UDZ5809HR2
UDZ581OHR2
UDZ5812HR2
UDZ5815HR2
UDZ5818HR2
UDZ5820HR2
UDZ5824HR2
UDZ5827HR2 .
UDZ5830HR2
UDZ5833HR2
UDZ5836HR2
UDZ5840HR2
UDZ5845HR2
UDZ5860HR2

Specifications apply for both directions.
7.5
175
1.8
8.2
150
1.8
150
9.1
2.5
10
125
2.5
12
100
2.5
15
75
3.5
18
65
4
20
65
4.5
24
50
5
27
50
6
30
40
8
33
40
10
36
30
11
40
30
14
45
30
20
60
20
40

::!:10%

pA

500
400
200
100
50
15
10
10
10
10
10
5
5
5
5
5

Maximum

Cont.

±5%

Current

Inc

Maximum

Surge
Current t
Is

Volls

Volts

mA

Amps

4.9
5.4
5.9
6.6
8.6
10.8
12.9
14.4
17.3
19.4
21.6
23.7
25.9
28.8
32.4
43.2

5.2
5.7
6.2
6.9
9.1
11.4
13.7
15.2
18.2
20.6
22.8
25.1
27.4
30.4
34.2
45.6

620
570
510.
470
385
300
255
220
180
155
140
130
120
105
95
75

40
32
24
22
18
12
9
8
6.5
6
5.5
5
4.5
4
3.5
2.5

*For ±50/0 voltage tolerance change the 3rd number from the right from 8 to 7 i.e. UDZ8807 to UDZ8707, etc.
tAli zener voltages are measured with an automated test set using a 35ms test time. longer ·or shorter test times will have a corresponding
effect on the measured value due to heating effects.
§Zener impedance is derived from the 6~cycle voltage created when _AC current with RMS value of 10% of DC zener ~test current is superimposed on the test current.
**D.C. Ratings are based on the lead temperature conditions shown in the data sheets covering the UDZ8807, UDZ807, and UDZ5807
series devices. Other conditions will affect the power ratings of all the families except the 1 watt zener family. Howeverj the surge values
given apply for any mounting conditions including printed circuit board mounting.
tFigures shown are for peak sinusoidal surge current" of 8.3ms duration using 60 cycle AC. The 8.3ms square pulse rating is 710/0 of the value
shown.

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% olthe devices specified UDZ5807HR2 through UDZ5890HR2.
SCREEN

MIL-STD-750
METHOD

CONDITIONS

1.

High Temperature Storage

1032

TA = 175OC, 24 Hours

2.

Temperature Cycling

1051

C;20 Cycles, -65 to +175OC:No dwell required
@ 25°C, t ~ 10 min. at extremes_

3.

Hermetic Seal @ Gross Leak

1071

4.

Interim Electrical Parameters

GOtNOGO

5.

Power Burn-in

6. Final Electrical Parameters

UNITRODE , SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET.· WATERTOWN, MA 02172 ..
TEL. (617) 926·0404. FAX (617.) 924-1235

1038
GOtNOGO

4-26

E,ZYGLO

Vz + IR @ 25°C
B, 96 Hours, TA = 25OC, Iz adjusted so that 150°C
175OC. This test performed in each direction

.. 1] ..

Vz + I R @ 25°C
PDA = 20% (Final Electricals)

PRINTED IN U.S.A.

POWER ZENERS

UZ706 SERIES
UZ806 SERIES
UZ706HR2 SERIES
UZ806HR2 SERIES

3 Watt
FEATURES
• 10 Times Greater Surge Rating than Conventional
1 Watt Types
• Small Physical Size
ABSOLUTE MAXIMUM RATINGS
Zener Voltage, VZ ..
Continuous Current
Surge Current (8.3ms)
Surge Power
Power ....
Storage and Operating Temperature

DESCRIPTION
Fused-in-glass metallurgically bonded
3 watt zener diodes.

-

.... 6.8 to 400V
........ See Table
See Table
............ ......... See Graph
See Lead Temperature Derating Curve
-WC to +175"C

MECHANICAL SPECIFICATIONS

r

BAND INDICATES
CATHODE END

c::=:::1

~

UZ706HR2 SERIES UZ706 SERIES
UZ806HR2 SERIES. UZ806 SERIES

.155 TYP.

t.

3.9mm

BODY A

.085 MAX.2.l6mm

.1
l
c:=::::J
C==~~nc==~~~~~~~~~'t

1

----'.700 MIN.

~

+

.250 MAlh.

--17.8mm

6.35mm~

L.030±.001
O.77mm ±.03
055 TY~
~. 1.4mm·

UZ Prefix is identified by a Blue or Red Cathode Band
Power Dissipation
vs. Lead Temperature Derating Curve

Surge Power
vs. Surge Duration
10K , - - , - - - , - - - - r - - - - , , - - ,

Typical Zener Impedance
VS. Zener Current
r-=----,---,~--,---,

10K

5K
~ 2K

1-------''''---+

.1
25

50

75

lao

125

150

175

lOms

L - _ - J____- L_ _-L~~

.1

LEAD TEMPERATURE ('CI

1

10

lOa

ZENER CURRENT (rnA)

OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices specified UZ706 through UZ140HR2.
SCREEN

MIL-STD-750
METHOD

High Temperature

1032

2. Temperature Cycling

1051

1.

3.

Hermetic Seal @ Gross Leak

1071

4.

Interim Electrical Parameters

GO/NOGO

5.

Power Burn-in

6.

Final Electrical Parameters

1038

GO/NOGO

4-27

CONDITIONS
.. 24 Hours @ TA = 175°C
C, 20 Cycles, -65 to +175°C. No dwell required
@ 25"C ;. 10 min. at extremes
E,ZYGLO
Vz + IR @25'C
B, 96 Hours, TA = 25"C, Iz adjusted so that
150"C "lj .. 175"C
Vz + IR @25°C
PDA = 10% (Final Electricals)

IA

UZ706 SERIES
UZ806 SERIES
UZ706HR2 SERIES
UZ806HR2'SERIES
Electrical Specifications at 25'C

.

Nominal
Zener
Voltage t

Type

Vz@lzr

±5'1'
Tolerance

.UZ7061706HR2
UZ707J707HR2
UZ708/708HR2
UZ709/709HR2
UZ71017l0HR2
UZ712J712HR2
UZ71317l3HR2
UZ71417l4HR2
UZ71517l5HR2
UZ71617l6HR2
UZ71817l8HR2
UZ7201720HR2
UZ722/722HR2
UZ724/724HR2
UZ727/727HR2.
UZ730/730HR2
UZ733/733HR2
UZ7361736HR2
UZ740/740HR2
UZ745/745HR2
UZ7501750HR2
UZ756/756HR2
UZ7601760HR2
UZ770/770HR2
UZ7751775HR2
UZ780/780HR2.
UZ790/790HR2
UZllO/llOHR2
UZlll/lllHR2
UZ1l2/112HR2
UZ1l3/113HR2
UZ1l4/114HR2
UZ1l5/115HR2
UZ1l6/116HR2
UZ1l7/117HR2
UZ118/118HR2
UZ119/119HR2
UZ120/120HR2
UZ122/122HR2
UZ124/124HR2
UZ126/126HR2
UZ1281128HR2
UZ130/130HR2
UZ132/132HR2
UZ134/134HR2
UZ136/136HR2
UZ138/138HR2
UZ140/140HR2

Jedec··
Registration

1N5063
1N5064
1N5065
1N5066
1N5067
1N4883
1N5069
1N5070
1N5071
1N5072
1N5073
1N4884
1N5074
1N5075
IN5076
IN5077
1N5078
1N5079
1N5081
1N50B3
1N50B5
1N50B7
1N50BB
1N5091
1N5092
1N5093
1N4096
1N4097
1N5096
1N5097

~

IN4098
IN5100
1N5101
1N5102
1N5103
1N5104
IN5105
IN5106
IN5107
1N5109
IN5110
IN5111
IN5113
IN5114
IN5115
IN5117

Volts

6.8
7.5
8.2
9.1
10.0
12
13
14
15
16
18
20

22
24
27
30
33
36
40
45
50
56
60
70
75
80
90
100
110
120
130
140
150
160
170
180
190
200
220
240
260
280
300
320
340
360
380
400

Max. Zener
Impedance§
Test
Current
IZI

Zz@l zr

mA

Ohms

75
75
75
75
75
65

2
2
3
3
4
5
6
6
6
7
8
9
10
10
12
15
21
21
27
37
50
70
70
90
100
115
150
175
250
325
375
550
650
700
750
850
900
950
1100
1300
1500
1700
1900
2100
2400
2700
3000
3500

50
50
50
50

40
40
30
30
25
25
20
20
20
15
15
10
10
10
10
10
8.0
5.0
5.0
5.0
5.0
5.0
5.0
4.0
4.0
4.0
4.0
4.0
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
2.0
2.0

Maximum Ratings

Maximum Reverse
leakage Current

Typ.
Maximum
Temp.
Continuous
Coefficient
Current.
Tc @IZT
IZM

Maximum
Surge

Currentt

I,@V,

±5%
V,

±10%
V.

.A

Volts

Volls

%/"C

mA

Amps

5.2
5.7
6.2
6.9
7.6
9.1
9.9
10.6
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
30.4
34.2
38.0
42.6
45.7
53.3
56.0
60.8
68.5
76.0
83.6
91.2
98.8
106
114
122
129

4.9
5.4
5.9
6.6
7.2
8.6
9.3
10.1
10.8
11.5
12.9
14.4
15.8
17.3
19.4
21.6
23.7
25.9
28.8
32.4
36.0
40.3
43.2
50.5
54.0
57.7
"64.8
72.0
79.2
86.4
93.6
101
108

.04
.04
.05
.05
.06
.07
.07
.07
.07.
.07
.08
.08
.08
.08
.09
.090
.090
.090
.095
.095
.095
.095
.095
..095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.100
.105
.105
.105
.105
.105
.110
.110
.110
.110

440
400
360
330
300
250

10~0

500
300
.. 200
100
40
10
10
10
10
5
5
5
5

5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
.1
1
1
1
1
1
1
1
1
1
1
1
1
1

1

137

144
152
167
182
198
213
228
243
258
274
289
304

115

122
129
137
144
158
173
187
202
216
230'
245
259
274
288

I,

8.0
7.0
6.0
5.0
4.0
4.0
4.0
3.0
3.0
2.0
2.0
2.0
1.5
1.5
1.5
1.2
1.0
1.0
0.8
0.8
0.7
0.6
0.6
0.5
0.4
0.4
0.4
0.3
0.2
0.20
0.20
0.20
0.15
0.15
0.10
0.10
0.10
0.09
0.09
0.08
0.08
0.07
0.07
0.06
0.06
0.06
0.06

230

210
200
185
170
150
135
125
110
100
90
85
75
65
60
55
50
45
40
35
30
30
25
25
20
20
20
20
18
18
15
15
15
12
12
10
10
9.
9
8
8
7

... Specify 20% voltage tolerance by changing first numeral of type number trom 7 to 9. (UZ709 becomes UZ909) or from 1 to 3 (UZlll be·
comes UZ311).
Specify 10% voltage tolerance by changing first numeral of type number from 7 to 8. {UZ709 becomes UZ809} or from 1 to 2 (UZll1 becomes
UZ211).

** Jedec registration applies to. ±5% tolerance ~eners only.
.
.
t All zener voltages are measured with an automated test set using a 35 ms test time. Longer or shorter test times Will' have a corresponding

effect on the measured value due to heating"effects.
§ Zener impedance is derived from the 60-cycle AC voltage created when AC current with RMS value of 10% of DC zener test current
super.
imposed on the test current.
Maximum current based on 3 watt rating. See ~ead temperature derating curves for proper mounting methods.
1 Figures shown are for a peak sinusoidal surge ·current of 8.3ms dUration using 60 cycle AC.
The 8.3ms square pulse rating is 71% of
the value shown.

is

*

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926.Q404 • FAX'(617) 924·1235

4-28

PRINTED IN U.S.A.

UZ4706 SERIES
UZ4806 SER IES

POWER ZENERS
5 Watt, Industrial

DESCRIPTION
Fused-in-glass 5 watt zeners with the same
electrical specs as the INS342-1NS388
series.

FEATURES
• 2 Times Greater Surge
Rating than Plastic Types
• Sma II Physical Size
• Impervious to Moisture

ABSOLUTE MAXIMUM RATINGS
Zener Voltage, Vz ....
Continuous Current .......... ..
Surge Current (8.3ms) .
Surge Power .............. .
Power ............. ..
Storage and Operating Temperature .....

..

. 6.8 to 200V
.. ... See Table
.. ... See Table
.... See Graph
.... Sep I ead Temperature Derating Curve
....................... -6S"C to +17S"C

MECHANICAL SPECIFICATIONS
UZ47D6 SERIES
BAND INDICATES
CATHODE END

r

~

.l75TYP.

..

r.

4.4mm

UZ4806 SERIES

BODY B

.l45 MAX.
3.6Bmm

~c===~t===~~~~~\~~~I~~~~t

1

L

+

--,~~5B~~~~2~'::":"

_

.040 •.001
l02mm±.03

.115 TY?
2.9mm

UZ Prefix is identified by a Blue or Red Cathode Band

Power Dissipation
vs. Lead Temperature Derating Curve

~

10K

1\

'\ ~\~
J \<

z

a

~
iii
'"Ci

....

r- ~<"J'

K·.·.

0:

.•..

"'-

UJ

;:
a

a.

x

'"

VS.

I

L :::: Lead Length

:;;;

o

from Body

a

25

5K

~ 2K

..

'"
lK
UJ
;: 500

\

a

~ 200

"'- ,,\
\

I
~

'" "

'"

'"

lK

I

SOD

SQUARE PULSE

::J

~~

50
75
100 125 150
LEAD TEMPERATURE ("C)

"-

c:: 100

'" ,

Typical Zener Impedance
vs. Zener Current

Surge Power
Surge Duration

50

§

10
lOOns

100
50

'aa."

10

UJ

Z

'" "'"

UJ

;§

"-

5

0:
UJ

z

"'N

20
175

u

1
.5

v
...;t--"'!"""'---l--l-----l___j

SDK

z

X
::;;

Typical Zener Impedance
vs. Zener Current

Ir---+----"''d-----r----+------i

~
::;;

100

f-''f':'::<2'''''-l:,=!""",-''''--l::--l----j---j

SOr-~~~~~~~~

lOr-+---~~~~~~~~___j
5 r-+----+--l"""-2'-<"'......"::O""'-

0:
UJ

r---+---+----+---'>..,d-------1
r---+----,--

100 L -__--'-__- - '____
____"___
lOOns l,u.s
lOps IOOp.s
Ims IOms
~

SURGE DURATION (S)

~
N

1r-+----+~----+-~~~

.5r-+----+--l----+--l-~~~~~

~

5

10

500 '!A

ZENER CURRENT (rnA)

n nPRODUCTS
SEMICONDUCTOR
L.:::J
4-31

_UNITRODE

..

UZ5706 SERIES

Electrical Specifications at 25'C

Type

*

±S%

Tolerance

±10%
Tolerance

UZ5706
UZ5707
UZ5708
UZ5709
UZ5710
UZ5712
UZ5713
. UZ5714
UZ5715
UZ5716
UZ5718
UZ5720
UZ5722
UZ5724
UZ5727
UZ5730
UZ5733
UZ5736
UZ5740
UZ5745
UZ5750
UZ5755
UZ5760
UZ5770
UZ5775
UZ5780
UZ5790
UZ5110
UZ5111
UZ5112
UZ5113
UZ5114
UZ5115
UZ5116
UZ5117
UZ5118
UZ5119
UZ5120
UZ5122
UZ5r24
UZ5126
UZ5128
UZ5130
UZ5132
UZ5134
UZ5136
UZ5138
UZ5140

UZ5806
UZ5807
UZ5808
UZ5809
UZ5810
UZ5812
UZ5813
UZ5814
UZ5815
UZ5816
UZ5818
UZ5820
UZ5822
UZ5824
UZ5827
UZ5830
UZ5833
UZ5836
UZ5840
UZ5845
UZ5850
UZ5856
UZ5860
UZ5870
UZ5875
UZ5880
UZ5890
UZ5210
UZ5211
UZ5212
UZ5213
UZ5214
UZ5215
UZ5216
UZ5217
UZ5218
UZ5219
UZ5220
UZ5222
UZ5224
UZ5226
UZ5228
UZ5230
UZ5232
UZ5234
UZ5236
UZ5238
UZ5240

Max. Zener
Impedance§
Test
Current
I"

Zz@ Izr

Volts

mA

Ohms

pA

6.8
7.5
8.2
9.1
10.0
12
13
14
15
16
18
20
22
24
27
30
33
36
40
45
50
56
60
70
75
80
90
100
110
120
130
140
150
160
170
180
190
200

175
175
150
150
125
100
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
20
20
20
15
15
15
10
10
10
10
8
8
8
8
5
5
5
5
5
5
4
4
4
4
3
3
3

1.0
1.5
1.5
2.0
2.0
2.5
3.0
3.0
3.5
3.5
4.0
4.5
5.0
5.0
6.0
8
10

500
400
200
100
75
50
25
20
15
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5

220

240
260
280
300
320
340
360
380
400

,

II

14
20
25
35
40
50
55
80
90
100
125
170
190
230
330
350
380
450
470
500
550
650
750
850
950
1100
1200
1400
1500
1800

Maximum Ratings

Maximum Reverse
Leakage Current·

Nominal
Zener
Voltage t
Vz @ IZT

I,

UZ5806 SERIES

Typ.

±5%

± 10%
V,

Coeff.
Tc@ Izr

Continuous
Current
I",

Maximum
Surge
Current
Is

Volts

Volts

%/'C

mA

Amos

.05
.06
.06
.06
.07
.07
.08
.08
.08
.08
.085
.085
.085
.090
.090
.09
.09
.095
.095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.105
.105
.105
.105
.105
.llO
.110
.llO
.115
.115
.120
.120
.120
.120
.120
.120
.120
.120

675
620
570
510
470
385
350
320
300
275
255
220
195
180
155
140
130
120
105
95
85
80
75
65
60
55
50
45
40
38
35
33
31
30
27
25
24
22
20
18
17
16
15
14
13
12
12

V,

~

5
5
5
5
5
5
5
5
5
5
5
5
5

5.2
5.7
6.2
6.9
7.6
9.1
9.9
10.6
ll.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
30.4
34.2
38.0
42.6
45.7
53.3
56.0
60.8
68.5
76.0
83.6
91.2
98.8
106.0
114.0
122.0
129.0
137
144
152
167
182
198
213
228
243
258
274
289
304

4.9
5.4
5.9
6.6
7.2
8.6
9.3
10.1
10.8
ll.5
12.9
14.4
15.8
17.3
19.4
21.6
23.7
25.9
28.8
32.4
36.0
40.3
43.2
50.5
54.0
57.7
64.8
72.0
79.2
86.4
93.6
101.0
108.0

m:g
129
137
144
158
173

187
202
216
230
245
259
274
288

Temp.

Maximum

*

*

40
32
24
22
20
18
16
14
12
10
9.0
8.0
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.8
2.5
2.3
2.0
1.8
1.6
1.4
1.2
1.0
0.80
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.24
0.23
0.22
0.21
0.20

11

Temperature Range: Operatmg and Storage -65 C to +175 C.

• Specify 20% tolerance by changing the second numeral of type number from 8 to 9 (UZ58D9 becomes UZS909) or from 2 to 3 (UZS211 becomes
UZ5311).
t All zener voltages are measured with an automated test set using a 35 millisecond test time. Longer or shorter test times will have a
corresponding effect on the measured value due to heating effects.
§ Zener impedance is derived from the 6o-cycle AC voltage created when AC current with RMS value of 10% of DC zener test current is
superimposed on the test current.
Maximum current based on 5 watt rating. See lead temperature derating curves for proper !11ounting methods.
Figures shown are for a peak sinusoidal surge current of 8.3ms duration USing 60 cycle AC. The 8.3ms square pulse rating is 71% of the
value shown.

*

*'

Several of the above types now have JEDEC IN type numbers. The following cross-reference table lists the appropriate IN
numbers; specifications are same as above.
JEDEC #

UNITRODE TYPE

JEDEC #

UNITRODE TYPE

JEDEC #

1N5118
IN5119
IN5120
IN5121
1N5122
IN5123

UZ5714
UZ5740
UZ5745
UZ5750
UZ5760
UZ5770

IN5124
1N5125
IN5126
IN5127
1N5128
1N5129

UZ5780
UZ5790
UZ5114
UZ5117
UZ5119
UZ5126

1N5130
IN5131
1N5132
IN5133
1N5134

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

4·32

UNITRODE TYPE

UZ5128
UZ5132
UZ5134
UZ5138
UZ5140

PRINTED IN U.S.A.

POWER ZENERS

UZ7706L and UZ7806L SERIES
UZ7706 and UZ7806 SERIES

6 Watt, Military, 10 Watt Military

DESCRIPTION
Fused-in-glass, metallurgically bonded
6 watt leaded zeners and 10 watt
stud-type zeners.

FEATURES
• High Surge Rating
• Small Physical Size
• Leaded and Stud Packages Available

ABSOLUTE MAXIMUM RATINGS
Zener Voltage, VZ ............................................................................................................. 6.8 to 100V
Continuous Current ............................................................................................................. See Table
Surge Current (8.3ms) ......................................................................................................... See Table
Surge Power ...................................................................................................................... See Graph
Power ........................................ UZ7706L & UZ7806L See Lead Temperature Derating Curve
UZ7706 & UZ7806 @lOO'C Case ....................
... lOW
Storage and Operating Temperature .............................................................-6S·C to +17S'C

MECHANICAL SPECIFICATIONS
uzn06L and UZ7806L SERIES'

-r--- -- ...::'~~:"~P. [)
--.1

L.230·' TYP,;j .040" ± .001
S.84mm ~_+_~r:nm_:t".1?3_

(] .1:~~~~X.

2J.25mm

i

_-4.105'TYP.

I

.925" MIN.

1 2•7mm
.400" MAX.

I
r---'

---~

uz Prefix

-1--

I

__ ~

I

~

lo.2mm
2.35" MIN.
59.6mm - - -

Is identified by a Blue or Red Cathode

Ba~d

UZ7706 and UZ7806 SERIES
.187" MAX.

.045" TVP•

(4.75mm)

(O.l1mm)

.005 MAX.

. R.d;",
.112 MAX.

~

.460" MAX.

#4-40

x

j

r(11.6Bm~)

to Shoulder

. -; /

BODY CLead Mount

"_

_.

BODY C - Stud Mount

.187'" HEX•
(4.75mm)
>-1/

~

'-==T~~

:~~~. :::~~~: LONG THREAD .~~~~~~)

POLARITY: Cathode to Stud is standard. Reverse polarity denoted by uRn suffix.
FINISH: Metal parts gold plated per MIL·G·
45204, Type II.
WEIGHT: 1.5 grams (max.)
INSTALLATION PRECAUTIONS: Maximum un·
lubricated stud torque: 28 inch-ounces. Do
not use a screwdriver in the turret slot for
installation ~urposes. or damage may result.
Also available with insulated stud. Reference Design Note·17.

nn

SEMICONDUCTOR

~ PRODUCTS

4-33

_UNITRDDE

-

UZ7706L and UZ7806L SERIES
UZ7706 and UZ7806 SERIES

MECHANICAL SPECIFICATIONS
Style W

Gold Plated

Beryllia
Insulating
Full thread to within
.060 of shoulder-oj
3.51mm

j... .125" TYP.

.012" TYP. ..j

I

.138"

I I

.30mm

3.18mm

~.21"~~
G
5.33mm

-lIIIiIlIIIIIIHH-IHI-

- --"-

-

ADO" MAX.

+

\

lO.16mm

MAX'~====,I--*-- '\~ .250"
HEX.
6.35mm

.385

9.78mm

.750" MIN.
19.05mm
Dimensions in inches.

Style V

Beryllia Insulating Disc
.012"
TYP.
Full thread to within

.30mm

3.Jr~~~'li.fti~us

.062" DIA•
1.57mm

!'-

•060 of ShOUlderl [

-+111-1'---

-:;;'~;==lGt~!Q-!i

1
6·32 x .240"'.010"
6.10mm:t.25mm

T

Copper, Gold Plated

.005"

MAX. RAD .

.13mm

Dimensions in inches.

lOOK

~

50K

z
0

.
~

~20K

6

...3:
~...

I

""'-

;; 10K

in

II)

5

...3:
0:

.x

II)

5K
2K

a

<.)

""

..

25

50

15. 100

125

150

175

[EAD TEMPERATURE (OC)

UNITRODE • SEMICONDUCTOR PRODUCTS
. 580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

lOOns

lp.s

10
5

Q

W

~

I'-...

500

100
0

...
z

200

::;

§

<[

j

<[

100
50

I

SQUARE PULSIi

~

:;1 IK

0

Typical Zener Impedance
vs. 'Zener Current

Surge Power
vs, Surge Il!Iration

Power Dissipation
vs. Lead Temperature Derating Curve

10,"5

lOO~s

~

"

Z

"

Ims

SURGE DURATION (S)

4-34

0:
W
W
N

10ms
ZENER CURRENT (rnA)

PRINTED IN U.S.A.

UZ7706L and UZ7806L SERIES
UZ7706 and UZ7806 SERIES

Electrica' Specifications at 25'C

*

Type

±5%

Nominal
Zener

Test

Max. Zener
Impedance §

Voltage t
VZ@IZT

Current
I"

Zz@lzr

Maximum Ratings'

Maximum Reverse
Leakage Current
IR@VR

Typ.

Maximum
Continuous

V,

V.

Temp.
Coelf.
Tc@ IZT

%/oC

rnA

±5%

:±: 10%

±100/0

Current*

Maximum
Surge

Current:l:
I,

I",

Tolerance

Tolerance

Volts

rnA

Ohms

.A

Volts

Volts

UZ7706
UZ7707
UZ7708
UZ7709
UZ7710

UZ7806
UZ7807
UZ7808
UZ7809
UZ7810

6.8
7.5
8.2
9.1
10.0

350
325
300
275
250

0.6
0.7
0.8
1.0
1.0

1000
800
200
150
100

5.2
5.7
6.2
6.9
7.6

4.9
5.4
5.9
6.6
7.2

.04
.04
.05
.05
.06

1350
1250
1150
1020
950

50
41
31
29
26

UZ7712
UZ7713
UZ7714
UZ7715
UZ7716

UZ7812
UZ7813
UZ7814
UZ7815
UZ7816

12
13
14
15
16

200
200
175
150
150

1.3
1.5
1.5
2.0
2.5

75
40
30
20

9.1
9.9
10.6
11.4
12.2

8.6
9.3
10.1
10.8
11.5

.07
.07
.07
.07
.07

770
700
640
600
550

23
21
20
17
15

UZ7718
UZ7720
UZ7722
UZ7724
UZ7727

UZ7818
UZ7820
UZ7822
UZ7824
UZ7827

18
20
22
24
27

130
120
100
100
90

3.5
4.0
4.5
5.0
6.0

20
20
20
20
20

13.7
15.2
16.7
18.2
20.6

12.9
14.4
15.8
17.3
19.4

.08
.08
.08
.08
.09

500
440
390
360
310

12
11
10
9

UZ7730
UZ7733
UZ7736
UZ7740
UZ7745

UZ7830
UZ7833
UZ7836
UZ7840
UZ7845

30
33
36
40
45

80
70
60
60
50

8
10
12
15
20

20
10
10
10
10

22.8
25.1
27.4
30.4
34.2

21.6
23.7
25.9
28.8
32.4

.090
.090
.090
.095
.095

280
260
240
210
180

8.5
7.5
7.0
6.4
5.5

UZ7750
UZ7756
UZ7760
UZ7770
UZ7775

UZ7850
UZ7856
UZ7860
UZ7870
UZ7875

50
56
60
70
75

50
40
40
35
30

22
30
35
40
45

10
10
10
10
10

38.0
42.6
45.6
53.2
56.0

36.0
40.3
43.2
50.4
54.0

.095
.095
.095
.095
.095

170
160
150
130
120

4.6
4.1
3.7
3.3
3.1

UZ7780
UZ7790
UZ71l0

UZ7880
UZ7890
UZ72lO

80
90
100

30
25
20

60
75
90

10
10
10

GO.8
68.4
76.0

57.6
64.8
72.0

.095
.095
.100

110
100
90

2.9
2.6
2.3

50

Amps

13

For optional high reliability screening, see UZ706·UZl40HR data sheet.
Power Rating: Stud Mounted: 10 Watts at 100°C Case derate linerally to zero at 175°C Case.
Lead Mounted: See lead temperature derating curve.

Temperature Range: Operating and storage -65°C to 175°C.

* Specify 20% tolerance by changing the second numeral of type number from 8 to 9 (UZ7809 becomes UZ7909) or from 2 to 3 (UZ7210. becomes UZ73lD). Specify leaded
t

version by adding an L suffix (UZ7809 becomes UZ7809L).
All zener voltages are measured with an automated test set using a 35 msec test time. Longer or shorter test times wUl have a corresponding effect on the measured value due
to heating effects.

§ Zener impedance is derived from the GO-cycle voltage created when AC current with RMS value of 10% of DC zener test current is superimposed on the test current.

* Ratings Based on 100Ge Case temperature; for leaded devices multiply by 0.6.
t

Figures shown are for a peak sinusoidal surge current of 8.3ms duration, non-repetitive. The 8.3ms square pulse rating is 71 % of the value shown.

UNITRODE· SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

4-35

PRINTED IN U.S.A.

..

UZ8706 SERIES
. UZ8806 SERIES

POWER ZENERS
1 Watt, Industrial

DESCRIPTION
One watt zener diodes, hermetically
sealed in glass.

FEATURES
.• High Surge Ratings
• A Quarter the Size of Conventionall Watt Zeners
• Impervious to Moisture

ABSOLUTE MAXIMUM RATINGS
Zener Voltage, Vz .............................................................................................................. 6.8 to 200V
Continuous Current .........................................
.....................;................................... See Table
Surge Current (8.3ms) .....
.................... ..................... .......... ................................. See Table
Surge Power
....................................
.........................................................See Graph
Power ......................................................................
... See Lead Temperature Derating Curve
Storage and Operating Temperature
......................... -6SoC to +17S"C

MECHANICAL SPECIFICATIONS
UZ8706 SERIES UZBB06 SERIES

r

.15STYP.
3.9mm

BODY A

.085 MAX.
2.l6mm

f":"
. ==~:lI=~~~\~~I~~~={1

.055TYP.
l.4mm

UZ Prefix is identified by a Blue or Red Cathode Band

1.5 ,---,..,---,--,..,-----,---r-,----,

IK,-----,--------,.-----,

10K
5K

~ 2K

ffi

lK

~

500

0..
W

200

~

hi
U

"- f"..

z

i3

50
20

50

75

100

125

ISO

LEAD TEMPERATURE ('C)

175

10
lOOns

1#5

100

"'~
0..

~

'"

V>

100V
75V

§:

SQUARE PULSE

~ 100

25

Typical Zener Impedance
vs. Zener Current

Surge Power
vs. Surge Duration

Power Dissipation
vs. Lead Temperature Derating Curve

~

""" "-

t--..

lOOps

Ims

10#5

10

~---r--~~~~~~

w

SURGE DURATION (5)

N

""

IOms

1 L-_ _ _L -_ _ _

.1

nn

L-_.--~L

10

100

ZENER CURRENT (rnA)

SEMICONDUCTOR

~ PRODUCTS

4-36

_UNITRODE

UZ8706 SERIES UZ8806 SERIES
Maximum Ratings

Electrical Specifications at 25°C
Type

±5%

:±: 10%

Tolerance

Tolerance

UZ8706
UZ8707
UZ 8708
UZ 8709
UZ8710
UZ8712
UZ8713
UZ8714
UZ8715
UZ8716
UZ8718
UZ8720
UZ8722
UZ8724
UZ 8727
UZ8730
UZ8733
UZ 8736
UZ 8740
UZ 8745
UZ 8750
UZ8756
UZ8760
UZ 8770
UZ 8775
UZ8780
UZ8790
UZ8110
UZ8111
UZ 8112
UZ 8113
UZ 8114
UZ 8115
UZ8116
UZ8117
UZ8118
UZ8119
UZ8120

UZ8806
UZ8807
UZ8808
UZ8809
UZ8810
UZ8812
UZ8813
UZ8814
UZ8815
UZ 8816
UZ8818
UZ8820
UZ8820
UZ8824
UZ8827
UZ8830
UZ 8833
UZ8836
UZ8840
UZ 8845
UZ 8850
UZ8856
UZ 8860
UZ8870
UZ8875
UZ 8880
UZ8890
UZ8210
UZ8211
UZ8212
UZ8213
UZ8214
UZ8215
UZ 8216
UZ8217
UZ8218
UZ8219
UZ8220

Nominal
Zener
Voltage t

Test
Current

Vz @ IZT

III

Volts

6.8
7.5
8.2
9.1
10
12
13
14
15
16
18
20
22
24
27
30
33
36
40
45
50
56
60
70
75
80
90
100
110
120
130
140
150
160
170
180
190
200

mA

37
34
31
28
25
23
21
19
17
15.5
14.0
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2.0
1.9
1.8
1.7

1.6
1.5
1.4
1.3
1.2

Max. Zener
Impedance§
Zz@ IZT

Ohms

3.5
4.0
4.5
5.0
7.0
9.0
10
12
14
16
20
22
23
25
35
40
45
50
62
75
85
110
125
150
175
200
250
350
450
550
700
850
1000
1100
1200
1300
1400
1500

Maximum Reverse
Leakage Current
±S%
±lO%
V,
V,
I,@V,
"A

50
30
10
3.0
2.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5

Volts

5.2
5.7
6.2
6.9
7.6
9.1
9.9
10.6
11.4
12.1
13.7
15.2
16.7
18.2
20.5
22.8
25.1
27.3
30.4
34.2
38.0
42.5
45.6
53.2
57.0
60.8
68.4
76.0
83.6
91.2
98.8
106
114
121
129
137
144
152

Volts

4.9
5.4
5.9
6.6
7.2
8.6
9.3
10.1
10.8
11.5
12.9
14.4
15.8
17.3
19.4
21.6
23.7
25.9
28.8
32.4
36.0
40.3
43.2
50.4
54.0
57.6
64.8
72.0
79.2
86.4
93.6
100
108
115
122
129
137
144

Typ.
Temp.
Coefficient

Continuou~

T.C.@lll

Maximum

Current

*

Maximum
Surge
Current:t:

I",

Is

%/oC

mA

Amps

0.04
0.04
0.05
0.05
0.06
0.07
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.095
0.095
0.095
il.095
0.095
0.095
0.095
0.095
0.095
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10

140
125
115
105
95
85
80
74
63

60
52
47
43
40
35
31
28
26
24
22
20
17
15
14
12
11

10
9.5
8.5
8.0
7.2
6.8
6.3
5.9
5.6
5.2
5.0
4.7

5.00
4.50
3.90
3.37
2.77
2.25
2.25
2.25
1.65.
1.65
1.12
1.12
1.12
0.825
0.825
0.825
0.675
0.562
0.562
0.450
0.450
0.390
0.337
0.337
0.277
0.225
0.225
0.225
0.165
0.112
0.112
0.112
0.112
0.082
0.082
0.056
0.056
0.056

t All zener voltages are measured With an automated test set usmg a 35 mllhsecond test time. Longer or shorter test times will have a corresponding effect on the measured value due to heating effects.
§Zener impedance is derived from the 60-cycle AC voltage created when AC current with RMS value of 10% of DC zener test current is superimposed on the test current.
*Ratings are based on free air. T .... is 2S;C. For use at 1.5 watts see derating curve.
:tFigures shown are for a peak sinusoidal surge current of 8.3 ms duration using 60 cycle AC. The 8.3 ms square pulse rating is 71% of the
value shown.

UNITRODE • SEMICONDUCTOR PRODUCTS

580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926·0404 • FAX (617) 924-1235

4-37

PRINTED IN U.S.A.

--

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

4-38

PRINTED IN U.S.A.

SWITCHING & GENERAL PURPOSE DIODES

Product Selection Guides
UNIBOND™ Diodes ............................................. 5-3
Switching & General Purpose Diodes ................................. 5-3
ProElectron Switching Diodes ...................................... 5-4
Datasheets .......................................... '........... 5-5

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEl. (617) 926·0404. FAX (617) 924·1235

5-1

PRINTED IN U.S.A.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

5-2

PRINTED IN U.S.A.

SWITCHING,
GENERAL PURPOSE DIODES

PRODUCT SELECTION GUIDE

UNIBOND SWITCHING DIODES

100V
75V

200
200

..

1.2V@100mA
1.0V@200mA

t Available as JANTX, JANTXV.

SWITCHING

40
40
40

40
40
70
75
75
75
75
75
75
75
75
75
75
75
75
75

80
85
85
100
100
100
100
200
200

75
150
200
200
200
200
75
125

ISO
ISO
150
150

ISO
ISO
150

ISO
200
200
200

300
400
500

40
40
75
125
100

ISO

@30mA
1.0@5mA
.49-.52 @ O.lmA
.42·.54 @O.lmA
.4·.5@0.lmA
.42·.54 @ O.lmA
.44-.55 @ O.lmA
1.0@10mA
1.0@ lOrnA
.74-.88 @ 20mA
1.0@50mA
.49·.55 @ O.lmA
.5·.575 @ .25mA
1.0@20mA .
1.0@20mA
1.0@IOOmA
1.0@30mA
.54-.62 @ 1mA
1.0@IOmA
1.0@ lOrnA
.64-.72 @ lOrnA
1.1 @4OOmA
1.1 @ 500mA
1.0@ lOmA
1.0@ 100mA
1.0@ lOrnA
1.0@lOmA
1.0@ loomA
lOrnA

2
150
2
4
10
50
7
4
4
4
2
2
2
4
4
4
4
4
4
2
6
10
10
500
500
5
5
50
50

2
4
6
30
2
2
2
2
2

2
2
4
2
4
2
2.5
2

2
4
4
4

3
·3
4
4
5
5

GENERAL PURPOSE

30
70
80
150
150
200
200
200
270

480
.. Available as JAN.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

90
75
200
55
150
40
40
200
400
400

1.0@40mA
1.0@20mA
1.0@lOOmA
1.0@7mA
.83-1.0 @ 200mA
1.0@3mA
1.0@ 10mA
1.0 @ lOOmA
1.0 @400mA
1.0@400mA

•• Available a. JAN, JANTX.

5·3

3/ls
300

2.5
3
20
20

• •• Available a. JAN, JANTX, JANTXV.

PRINTED IN U.S.A.

SWITCHING, GENERAL PURPOSE
AND STABISTOR DIODES

PRODUCT SELECTION GUIDE

PROELECTRON SWITCHING DIODES

115
300
225
600
600
225
600
600
300
225
400

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

1.0@30mA
1.0@30mA
1.0 @ 200mA
1.0@50mA
0.8 @ SOmA
1.0 @ 200mA
1.0@50mA
1.0 @ 200mA
1.0 @ 100mA
1.0 @ 200mA
1.25 @ 400mA

5-4

PRINTED IN U.S.A.

COMPUTER DIODE

IN251
JAN IN251

General Purpose

FEATURES
• Metallurgical Bond
• Qualified to Mll-S·19500/188
• Planar Passivated Chip
• 00-7 Package

ABSOLUTE MAXIMUM RATINGS. AT 25°C
Peak Reverse Voltage ........................................................... 40V
Reverse Working Voltage ........................................................ 30V
Average Rectified Current ................................................... 75mAdc
Surge Current. 1m. @ 125°C Free Air Temperature ............................. 125mA
Surge Current (JAN). 1s. 25"C .............................................. 200mA
Continuous Power Dissipation ................................................ 150mW
Operating Temperature Range ...................................... -55"C to +175"C
Storage Temperature Range ........................................ -55"C to +175"C

DESCRIPTION
This device is particularly suited to
applications where medium speed
switching is required. Moisture free
stability is ensured through hermetic
sealing.

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Type

1N251

JAN
1N251

Reverse
Current

Reverse
Current

20llA

O.lIlA

@

@

V. = 20V

V. = lOV

100llA

.lilA

@

@

V. = 30Vdc

V. = 10V

Reverse
Current
@ 125°C

Forward
Voltage

Reverse Recovery
Time
150ns

lOIlA
@

1V

@

@

'F = 5mA. V. = 10V
RL = 1Kn. CL = 10pf.
I.Ec = O.5mA

lOV
TA = 125°C

IF = 5mA

lOIlA

1V

@

lOV
T. = 100°C

@

IF = lOmA

30ns
IF =lOmA. I. =10mA
RL = lOOn. C = 4pf

MECHANICAL SPECIFICATIONS
JAN IN251

DO-7
IN251

A

...L

0

=911
P9=!=
TI- B-j-C-,
INCHES
.075- .130
.195-.300
C 1.0-1.5
.019-.021
0
A
B

MILLIMETERS
1.90-3.30
4.95- 7.62
25.4-38.1
.48-.53

nn

L..::::::J
5-5

SEMICONDUCTOR
PRODUCTS

_UNITRDDE

DIODE·.

IN456
IN457; JAN IN457
IN458;JAN IN458
IN459;JAN IN459

Low Current

DESCRIPTION
General purpose low current diode with
high reliability characteristics

FEATURES
• Metallurgical Bond'
• Qualified to MIL-S-19500/193
• Planar PaSSivated Chip ,
• 00-7 Package

ABSOLUTE M.AXIMUM RATINGS, AT 2SoC.

JAN
JAN
JAN
1N457
1N458
1N458
1N4S8
"25V",,, ..... SOV .•••...•• 125V ••••.•••• n'5V
Reverse Working Voltage- .•.............................. ,',.,"""
Peak Reverse Voltage ................................................... 30V .•........ 70V .•.•...•. 150V ......... 200V
Average Output Current ..•............................•...............90mA ........ 75mA ....••.. 55mA ........ 40mA
Surge Current, 8.3mS ................................................ 700mA ....... 225mA ' ....... 165mA ; ...... 120mA
Operating Temperature Range .. ; ................................................... ...,65·C to + 150·C ............... .
Storage Temperature Range ........................................................ - 65·C to + 200·C ............... .

ELECTRICAL SPECIFICATIONS -

-

T - +175'C

_J-

/

z

~-65'C

;/

1/

II

Ul

a:
a:

'"

~

/

II II

10

/

a:

'":;:
gu.

2

I

1.0

.1
.1

10boc

.02

t-

z

.05

uJ

cr
cr

0.1
.2

"

u

I

uJ

Vl

cr

10

~

20

I

}

1---

......

V

,/

50
100
140 130120110 100 90 BO 70 60 50 40 30 20 10 0
V, - REVERSE VOLTAGE (V)
(0.0 OF PIV)

I

----I....

...- f-"'

l - f--

cr

.2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3 1.4 1.5
V, - FORWARD VOLTAGE (V)

Production
Process
1. Raw Material
2. Factory
Processing

-

.5

175'C

-"

I

./
,/

106'c

>
w

II

/

I

I

1.0

w

/ / I

V I
I
II I

.,
.3

I~ f+ f--125'C

Inspection Lot
Formed at
Final.
Assembly
Operation

*100 Percent Process
Conditioning
1. High-Temp Storage
2. Temp Cycling
3. Hermetic Seal Tests

-

*100 Percent Burn-In

1. Measurement of

Inspection Tests
to
Verify LTPD
Group A
Group B

Specified Parameters

2. Burn-In
3. Measurement of
Specified Parameters
to Determine Delta

---

*Order of the tests in the blocks sha II be performed as shown.
Order of procedure diagrams for TX types on Iy.

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

5-8

PRINTED IN U.S.A.

COMPUTER DIODE

IN643; JAN IN643
IN662; JAN IN662
IN663; JAN IN663

Switching

FEATURES

DESCRIPTION

• Metallurgical Bond
• Qualified to MIL-S-195001256
• Planar Passivated Chip
.00-7 Package

This device is particularly suited to
applications where medium speed
switching is required_ Moisture free
stability is ensured through hermetic
sealing_

ABSOLUTE MAXIMUM RATINGS. AT 25°C

IN643
IN662
JAN IN643
JAN IN662
IN663
JAN IN663
Peak Reverse Voltage __ ....... _..... _..... _. _........... _... _. _... 200V ......... _. lOOV ...... _..... _lOOV .. _......... lOOV ..
Reverse Working Voltage. _. __ ....... _..... _.......... _.. _.. __ .. ... 175V ............ BOV . _........ _.. BOV ..... _...... BOV ..
Average Rectified Current. .. _....... _..... _........ _.. _. _... _.... 40mAdc ......... 40mAdc ........ _ 60mAdc ........ _. 100mA .
Surge Current. B.3ms . _....... _..... _..... _........ _.. _. _... _.... _... _. _.. _..... _.. 500mA '" _..•. _.......... _................ .
Operating Temperature Range .......•...... '" .•........... __ ................. -65°C to + 150°C ................................ .
Storage Temperature Range ...... _............................................ -65°C to + 175°C ................................ .

MECHANICAL SPECIFICATIONS

J IN643. IN662. IN663
A

J...

00-7
IN643
IN662
IN663

D

=911
~=*
Tr-s-r--c--l
A
B

C
D

INCHES
.077 - .130
.195 - .300
1.0 1.5
.019 - .021

MILLIMETERS
1.96 - 3.30
4.95 - 7.62
25.4 - 38.1
.48 - .53

nn

t..=J
5-9

SEMICONDUCTOR
PRODUCTS

_UNITRODE

IN643, IN662, IN663
JAN IN643, IN662, IN663

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Type

Maximum
Reverse
Current
@25°C

Maximum
Reverse
Current
@25°C

Maximum
Peak Reverse
Current
@25°C

Maximum
Reverse
Current
@ 100°C

lN643

25nAdc
@
VR = lOVdc

IpAdc
@
VR = 100Vdc

lOOpA pK
@
VR = 200V PK

l5pAdc
@
VR = 100Vdc

IN662

25nAdc
@
VR = 10Vdc

5pAdc
@
VR = 50Vdc

lOOpA pK
@
VR = 100VPK

100pAdc
@
VR = 50Vdc

IN663

25nAdc
@
VR = lOVdc

5pAdc
@
VR = 75Vdc

lOOpApK
@
VR = lOOV PK

50pAdc
@
VR = 75Vdc

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
~-

~-

Capacitance

Maximum
Reverse
Recovery
Time

3pF
@
VR = l75V

300ns
@
IF = 5mA
IR = 17.5mA
IREC = 0.2nA

lN662

1.0Vdc
@
IF = lOmAdc

3pF
@
VR = 80V

500ns
@
IF = 5mA
IR = l7.5mA
IREc = O.4nA

3pF

lN662

1.0Vdc
@
IF = lOOmAdc

Type

lN643

Maximum
Forward
Voltage
@25°C
1.0Vdc
@
IF = lOmAdc

500ns
@
IF = 5mA
IR=17.5mA
IREc = O.4nA

@

VR = 80V

Average Rectified Current vs.
Ambient Temperature
80

JeJJJ1L
'~ ~:'ra1 Ll jJ 1

:;( 60

E-

o-

15

'"'"=>
"c
«
'"
;.
'"
12

.1

)N662

40

'I"-


"'c:

II

~

I

L 1

I

I

I I

0.01
.02
.05
0.1
.2

I

f

.s
1.0
2

I

I

--

, , ,
I-- ..-

r--

,I,
./

100"C

./

,.-

l- I-)
175"C

-r-

10

I--

,/

I20 l-

v, -

V,- FORWARD VOLTAGE (V)

---l..

I

TJ = 25"C

50
100
140 130120 110 100 90 80 70 60 50 40 30 20 10 0

J
1
.1 .2 .3~.7 .8 .9 1.0 1.1 1.2 1.31.4 1.5

Production
Process
1. Raw Material
2. Factory
Processing

20pF
VA = 4 Vdc
f = IMHz
V". =50mV

LOVdc
@ IF = 400mAdc
8.3ms

.005

/; I I

II / 1- ':f -

gc:
u

./

TJ =+175"C

0.001 I
.002

"/I"

/.

Capacitance

Reverse Voltage vs. Reverse Current

Forward Voltage vs_ Forward Current
1000

Forward
Voltage
@25°C

Inspection Lot
Formed at
Final
Assembly
Operation

REVERSE VOLTAGE (V)
(% OF PIV)

*100 Percent Process
Conditioning
1. High-Temp Storage
2. Temp Cycling
3. Hermetic Seal Tests

*100 Percent Burn-In
1. Measurement of
Specified Parameters
2. Burn-In
3. Measurement of
Specified Parameters
to Determine Delta

Inspection Tests
to
Verify LTPD
Group A
Group B

-

-

*Order of the tests in the blocks shall be performed as shown.
Order of procedure diagrams.for TX types only.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

5-12

PRINTED IN U.S.A. '

COMPUTER DIODE

IN914; JAN, JANTX IN914
IN4148; JAN, JANTX, JANTXV IN4148
JAN, JANTX, JANTXV IN4148-1
IN4531; JAN, JANTX, JANTXV IN4531

General Purpose
Switching
FEATURES
• Metallurgical Bond
• Qualified to MIL-S-19500/116
• Planar Passivated Chip
• DO-34 or DO-35 Package
• Non-JAN Available

DESCRIPTION
This series is very popular for general
purpose switching applications in
electronic equipment.

ABSOLUTE MAXIMUM RATINGS, AT 25Q C
Reverse Breakdown Voltage ................................................. lOOV
Peak Working Voltage ................................................. _...... 75V
Average Output Current, lN9l4 ......... _..... _.............. _........... 75mAdc
lN4l48 ............................. _....... _. 200mAdc
IN4148·1 ...... _.............................. 200mAdc
IN4531 ... .-................................... 125mAdc
Surge Current, 8_3ms
_............................ _................. __ .. 500mA
Operating Temperature Range ................................... -65°C to +175°C
Storage Temperature Range ..................................... -65°C to +200·C

MECHANICAL SPECIFICATIONS
J, JTX IN914
J, JTX, JTXV IN4148
J, JTX, JTXV IN4148-1
J, JTX, JTXV IN4531

00-35
IN914
IN4148

00-34
IN4531

A

...L

D

==111
p=*
Tr- B-+ C--.J
J, JTX & JTXV IN4531
A
B
C
D

INCHES
.050- .065
.080-.120
1.0 MIN.-1.5 MAX.
.018-.022

MILLIMETERS
1.27-1.65
2.03-3.05
25.4 MIN.-38.1 MAX.
.46-.56

J, JTX IN914
A
B

C
D

INCHES
.058- .107
.140-.300
1.0 MIN.-1.5 MAX.
.018-.022

MILLIMETERS
1.42-2.72
3.56- 7.62
25.4 MIN.-38.1 MAX.
.46-.56

J, JTX, JTXV IN4148 and IN4148·1
A
B
C

o

INCHES
.056-.075
.140-.180
1.0 MIN.-1.5 MAX.
.018-.022

MILLIMETERS
1.42-1.91
3.56-4.57
25.4 MIN.-38.10 MAX.
.46-.56

nn

SEMICONDUCTOR

~ PRODUCTS

5-13

_UNITRODE.

IN914; J, JTX IN914
J, JTX, JTXV IN4148-1N4148-1
IN4531; J, JTX, JTXV IN4531

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

Peak
Reverse
Current

Reverse

Reverse

Reverse

Reverse

Current
@2S'C

Current
@lS0'C

Current
@lSO'C
100l'Adc

@2S'C

Current .
@2S'C

25nAdc

0.5pAdc

100l'A (pk)

50,.Adc

@

@

@

@

@

VR =20Vdc

VR =75Vdc

VR= 100V (pk)

VR=20Vdc

VR = 75Vdc

Forward
Voltage

Foward
Recovery
Voltage

Forward

Reverse

Recovery

Recovery

Time

Time

Capacitance

5ns

VR=OV,f=lMHz
V'ig = 50mV (pk-pk)

4.0 pF@
1.OVdc

5.0V(pk)

@

@

@

IF = 10mAdc

IF = 50mAdc

IF = 50mAdc

20ns

@

IF= IR=lOmA
RL = 100 ohms

Reverse Voltage vs_ Reverse Current

Forward Voltage vs_ Forward Current

0.001
.002
.005

1000
5
TJ

:;:

2

= 17S'C- 7
V

oS 100

V

~

"~

v.: ~ V

VV I

V il If l- f -

"'0:0:
/

10

0:

~

II

0:

~

I 1.0

II

.1

II

J

II

II

om

V

;; .02
.3
II
vIIz .05
"'0:0: 0.1
.2
u
V
1/
_5
"'UJ0: 1.0
t--r,ff+-H--t-+-t-1--i1-t-100'~j..L I>
"' 2

-6S'C
2S"C

"

100'C

II I

II

"'0:

I
II

-~

_1 .2 .3 .4 .5 .6 .7 .8 _9 1.0 1.1 1.2 1.3 1.4 1.5
V, -

2.8 pF@
VR= 1_5V, f = 1 MHz
V'ig = 50mV (pk-pk)

FORWARO VOLTAGE (V)

I

10
20
5
50
100 /
I I
140 130120110 100 90 80 70 60 50 40 30 20 10 0
v, - REVERSE VOLTAGE (V)

r'yP'"

(% OF PIV)

Production
Process
1. Raw Material
2. Factory
processing

----l.~..

Inspection Lot
Formed at
Final
Assembly
Operation

*100 Percent Process
Conditioning
1. High-Temp Storage
2. Temp Cycling
3. Hermetic Seal Tests

-

*100 Percent Burn-In
1. Measurement of
Specified Parameters
2. Burn-In
3. Measurement of
Specified Parameters
to Determine Delta

Inspection Tests
to
VerifyLTPD
Group A
GroupB

*Order of the tests in the blocks shall be performed as shown.
Order.of procedure diagrams for TX types only.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, Mil 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

5-14

PRINTED IN U.S.A.

JAN & JANTX IN3064
IN4454; JAN, JANTX & JANTXV IN4454
JAN, JANTX & JANTXV IN4454-1
IN4532; JAN, JANTX & JANTXV IN4532

COMPUTER DIODE
General Purpose
Switching

ABSOLUTE MAXIMUM RATINGS, AT 2SoC

FEATURES

Reverse Breakdown Voltage ........................................... 75V
Peak Working Voltage ................................................. 50V
Average Output Current, IN3064 .................................... 75mA
1N4454.-1. ................................ 200mA
IN4532 ................................... 125mA
Surge Current, Isec
IN3064 ..................................... 0.5A
IN4454,-1. .................................... lA
IN4532 ..................................... 0.5A
Operating Temperature Range ............................ -65°C to +175°C
Storage Temperature Range .............................. -65°C to +200°C

o Metallurgical Bond
• Qualified to MIL-S-19500/144
• Planar Passivated Chip
.00·7,00·34 or 00-35 Package

DESCRIPTION
Available in 00-7, DO-34 or 00-35
packages. Unitrode offers high
temperature metallurgical bond, making
these devices useful in high reliability
applications.

ELECTRICAL SPECIFICATIONS (at 2S0C unless noted)
Reverse
Current
@25°C

Reverse
Current
@ 150°C

Reverse
Breakdown
Voltage
@-65°C

O.lpAdc
@
VR =50V

100pAdc
@
VR = 50V

75Vdc
@
IR =5pAdc

Type
IN3064
IN4454
IN4454-1
IN4532

Reverse
Recovery
Time

Capacitance

4ns
@
IF = IR = 10mAdc
RL = lOOn
c:53pF

2pF
@
VR = OVdc
f = IMHz
Vsig =50mV
(pk to pk)

Forward
Recovery
Voltage

Forward
Voltage

Forward
Recovery
Time

1.0Vdc
@
IF = 10mAdc

5.0V (pk)
30ns
@
IF = 100mAdc
t,:5 0.4ns
IF = 100mAdc
t,:5 OAns

00-34
IN4S32

DO-3S
IN44S4

MECHANICAL SPECIFICATIONS
J & JTX IN3064
J, JTX & JTXV IN44S4 & IN4454-1
J, JTX & JTXV IN4S32
J. JrJ( & JTXV IN4532

A

..L

D

=911

....1-- 8

p~:

---+-- c

~

iNCHES
A
.050- .065
B .OBO-.120
C 1.0 MiN.-1.5 MAX.
D .0IB- .022

J. JTX & JTXV IN4454.·1

J & JTX IN3064
A

8
C
D

INCHES
.07B- .107
.195-.300
1.0 MiN. -1.5 MAX.
.0IB-.022

MILliMETERS
1.9B-2.72
4.96-7.62
24.0 MiN.-3B.I MAX.
.46-.56

-

MILLIMETERS

1.27-1.65
2.03-3.05
24.0 MiN.-3B.I MAX.
.46-.56

A

8
C
D

INCHES
.056- .075
.140-.1BO
1.0 MiN.-1.5 MAX.
.0IB-.022

MiLLIMETERS
1.42-1.91
3.55-4.57
24.0 MiN.-3B.I MAX .
.46-.56

nn

L:::::J
5-15

SEMICONDUCTOR
PRODUCTS

_UNITRDDE

-

COMPUTER DIODE

IN3070; JAN, JANTX IN3070
IN4938; JAN, JANTX IN4938

Switching

ABSOLUTE MAXIMUM RATINGS, AT 25°C
Reverse Breakdown Voltage .•.....' ............................................. 200V
Steady-State Forward Current at (or below) 25°C Free Air Temperature .........• l50mA
Peak Surge Current, lsec ..................................................... 500mA
Peak Surge Current, lpsec ....................................................... 2A
Continuous Power Dissipation at (or below) 25°C Free Air Temperature ........ 250mW
Operating Temperature Range ...................................... -65°C to +l75°C
Storage Temperature Range ........................................ -65°C to +200°C

FEATURES
• Double-plug Construction
• Qualified to MIL-S-l9500/169
• Available in 00-7 9r 00-35 package
DESCRIPTION
Double-plug construction affords integral
positive contact by means of a thermal
compression bond. Moisture free stability
is ensured through hermetic sealing. The
cceffic!ent~ of therm3! exp::mz:on of the
glass case and the dumet plugs are
closely matched. Hot solder dipped leads
are standard.

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)

Maximum Reverse Current
@25°C
@ l50°C

Type

IN3070
IN4938

O.lpAdc
@
175Vdc

lOOpAdc
@.
175Vdc

Maximum Forward
Voltage

Maximum
Capacitance

Maximum Reverse
Recovery Time

IVdc
@
IF = lOOmAdc

5pF
@
VA = 0, f = IMHz

50ns
@
IF ='30mA
IA = 30mA
IAEC = ImA

MECHANICAL SPECIFICATIONS
J, JTX, JTXV IN3070
J, JTX, JTXV IN4938

00·35
IN4938

00·7
IN3070

A

.-L

=~II
i.,

0

B

P9l

---.J-. c

J.JTX lN3070

J, JTX lN493S
A
B

C
D

INCHES
.056- .074
.140-.160
1.0 MIN
.DI9-.021

MILLIMETERS
1.42-1.88
3.56-4.57
25.4 MIN.
.48-.53

-~,

A
B
C
D

INCHES
.078-.107
.195-.300
1.0 MIN.-1.5 MAX.
.018- .022

MILLIMETERS
1.98-2.72
4.95-7.62
25.4 MIN.-3B.I MAX
.46-.56

I

nn

SEMICONDUCTOR

~ PRODUCTS

5-16

_UNITRODE

COM PUlER 010 DE,

IN3595; JAN, JANTX & JANTXV IN3595

150 rnA, Switching

ABSOLUTE MAXIMUM RATINGS, AT 25°C
Peak Reverse Voltage' , , .. , , . , .. , . , . , , . , , , , , , , , .. , .. , , . , ... , , .. , , ... , ... , .. 12SV
Reverse Breakdown Voltage ,.,""',.'.' .... ,."."." ..... ,." .. , ... ,.". 1S0V
Average Output Current ' ... "., ... ,"",.,' ...... , .. ,.,",.,.',.' .. ', .1S0mAdc
Surge Current, 1S." .... " .. "." .... , ... ,.,',." .. ,",." .. , .. ,.,"'" ,SOOmA
1I'S", '. , ... , ..... , .. ,.,.,"'.' ......... , .. ,' .. ,."" ... , .. , ,4A
Operating Temperature Range",.", ..... , ..... , ... ,"', .... ,. -6SoC to +17SoC
Storage Temperature Range .. ', .. , ..... , ........... ' ....... , .. - 6S'C to + 200'C

FEATURES
• Metallurgical Bond
• Qualified to MIL·S·19S00/241
• Planar Passivated Chip
• 00-7 Package

DESCRIPTION
A very uselul device lor medium current
switching applications.

eLECTRICAL SPECIFICATIONS (at 25°C unless noted)

Limits

VF,
IF = 200mAdc

Min

0.83Vdc

Max

1.00Vdc

Limits

IR,
VR = 12SVdc

VF,
IF = 100mAdc

VF,
IF = SmAdc

VF,
IF = 1mAdc

VF,
IF = SOmAdc

VF,
IF = 10mAdc

0.79Vdc

0.74Vdc

0.6SVdc

0.60Vdc

0.52Vdc

0.92Vdc

0.88Vdc

0.80Vdc

0.7SVdc

0.68Vdc

IR,
VR = 30Vdc

IR,
VR = 12SVdc

IR,
VR = 12SVdc

t"
iF = 10mAdc

TA = 12S'C

TA = 12S'C

TA = 1S0'C

C
VR = OVdc
1= 1MHz

VR = 3SVdc

Min

-

-

-

-

-

-

Max

1,OnAdc

0.3~dc

0,5~dc

3,0~dc

8.0pF

3.01'S

MECHANICAL SPECIFICATIONS
JAN, JANTX, JANTXV 1N3595

00·7

IN3595

A

...L

0

=911
p=*
TI- B-+-C~
INCHES
A
.092- .130
B
.130- .300
C 1.0-1.5
D .018-.022

MILLIMETERS
2.34-3.30
3.30-7.62
25.40-38.10
.46-.56

nn

SEMICONDUCTOR

~ PRODUCTS

5-17

_UNITRODE

-

IN3600;JAN, JANTX & JANTXV IN3600
IN4150; JAN, JANTX & JANTXV IN4150
JAN, JANTX &JANTXV IN4150-1

COMPUTER DIODE
200mA
Low Power, Switching

FEATURES

DESCRIPTION

•
•
•
•
•

This series of switching diodes is useful in
many computer switching applications, for
both military and commercial systems.

Metallurgical Bond
Qualified to MIL-S-19500/231
Planar Passivated Chip
DO-7 or DO-35 Package
Non-JAN Available

ABSOLUTE MAXIMUM RATINGS, AT 25'C
Reverse Breakdown Voltage .................................................................................................... 7SV
Peak Working Voltage .............................................................................................................. SOV
Average Output Current .................................................................................................... 200mA
Surge Current (lsec) ................................................................................................................ O.SA
(lpsec) ... ..... ...... ...... ..... ....... ... ........ ............ ....... ...... ......... ........ ....... .......... ...... 4.OA
Operating Temperature Range .................................................................. -65'C to +17S'C
Storage Temperature Range (1 N4150) .................................................. -65'C to +200'C
(lN3600) ..:............................................... -65'C to +17S'C

MECHANICAL SPECIFICATIONS
J, JTX & JTXV 1N3600

J, JTX & JTXV lN4150, lN4150-1

A

...1..

A

J...

D

=7r!!B-t~+
A
B
C
D

INCHES
.078-.107
.195-.300
1.0 MIN.-I.5 MAX.
.018-.022

00-35
IN4150

00-7
IN3600

MILLIMETERS
1.98-2.72
4.96-7.62
25.4 MIN.-38.1 MAX.
.46-.56

=911

D

p=+

Tf-- B-+-C~

A
B

C
D

INCHES
.056- .075
.140-.180
1.0 MIN.-I.5 MAX.
.018-.022

MILLIMETERS
1.42-1.91
3.56-4.57
25.4 MIN.-38.1 MAX.
.46-.56

nL.:::::Jn

SEMICONDUCTOR
PRODUCTS

5-18

_UNITRODE

IN3600, IN4150; JAN, JANTX & JANTXV IN3600, IN4150, IN4150-1
ELECTRICAL SPECIFICATIONS (at 2S'C unless noted)

Characteristics

Forward Voltage

Forward Voltage

Forward Voltage

Forward Voltage

Forward Voltage

Reverse
Breakdown
Voltage

Conditions

VF1
IF=l mAde

VF2
IF=10 mAde

VFl
IF=50mAde
(pulse)

VF4
IF= 100 mAde
(pulse)

VF5
IF=200mAde
(pulse)

BV
IR = 5_0 /lAde

Minimum
Maximum

0_540 Vde
0.620 Vde

0_660 Vde
0.740 Vdc

0_760 Vde
0.860 Vde

0_820 Vdc
0.920 Vde

0.870 Vdc
1.00 Vde

Characteristics

Reverse Current

Reverse Current

Junction Capacitance

Conditions

IR
VR=50Vdc

IR
VR=50Vde
TA = 150'C

C
VR=O
F= 1 MHz
V". = 50 mv (p-p)

Maximum

0.1 "Ade

100/lAde

2.5 pf

Reverse
Recovery Ti me

Forward

Recovery Time

Recovery Time

IF=IR=
IF=IR=
10 to 200 mAde; 200 to 400 mAde;
RL =100 ohms
RL = 100 ohms

IF = 200 mAde;
tp = 100 nsee;
t, = 0.4 nsee

6 nsee

4 nsee

10 nsee

Reverse Voltage VS. Reverse CUrrent
.002

.005
0.01

~
~

~
~

"w
'"ffi

r r

r~,LJsoc'

.02

V

.05
O. 1
.2

.5

--

V

II
100°j;;

1.0

0:

I

10
20

r-

f..!r

f-r-

-l75'c- iT
J.~

0
100

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.01.11.2 1.31.41.5
v, - FORWARD VOLTAGE (V)

I....

J...--- r-

--

d--2sob ,..-

~

r:;

1+

t"

trr2

0.001

Lots proposed
for
non·TX
types

-

Reverse

trrl

Typical Forward-Current vs Voltage

Inspection lots
formed atfinal
assembly operation
(sealing)

75Vde

140 130 120 110 100 90 80 70 60 50 40 30 20 10 0
VR -

REVERSE VOLTAGE tV)
(% OF PIV)

Inspection tests to.
Review of
verify LTPD
Groups A and B
I~
Group A
data for
Group B
accept or reject

I....

Non·TX
Preparation
for
Delivery

t
Lots proposed
for
"TX"types

1.
100 Percent process conditioning*

1. High·temp storage
2. Thermal shock
(glass strain)
3. Acceleration
4. Hermetic seal tests

2.
3.

4.

5.
6.

100 Percent burn·in*
(reverse and forward .blas tests)
Measurement of specified parameters
Reverse bias
Measurement of specified parameter
to determi[1e delta
Forward bias
Measurement of specified parameters
to determine delta
Lot rejection criteria based on
rejects from the Reverse and
Forward bias tests.

Order of procedure diagram for non·TX and "TX" types.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

5-19

Inspection
tests to verify
LTPD
Group A
GroupB
Review of
Group Aand B
data for
lot accept
or reject
TX
Preparation
for
Delivery

PRINTED IN U.S.A.

•

IN4149, IN4151, IN4154
IN4446, IN4447, IN4448
IN4449

COMPUTER DIODE
Switching

FEATURES
• Metallurgical Bond
• Planar Passivated
• 00·35
DESCRIPTION
This series offers Metallurgical Bonding
and Is very popular for general purpose
switching applications.

ABSOLUTE MAXIMUM RATINGS, AT 2S"C
1N4149
1N~151
1~J4154
~N';44a
I I........ '
.rt&l&t&to
I ..........."
Peak Reverse Voltage ............... 75V ........ 75V ........ 35V ........ 75V ........ 75V ........ 75V ........ 75V ....... .
Average Rectified Current ............................................... 200mAdc .................................. .
Surge Current, 8.3 mS ....................................................500mA ................................... .
Operating Temperature Range ...................................... -65'Cto +150·C ............................... .
Storage Temperature Range ........................................ - 65'C to + 200'C ............................... .

ELECTRICAL SPECIFICATIONS·lat 2S'C unless noted)
Forward Voltage

Type

Peak
Inverse
Voltage

@10mA

@20mA

@30mA

@SOmA

@ 100mA

lN4149

75

1.0

75

-

-

-

lN4151

-

-

~N4154

35

lN4446

75

lN4447

75

lN4448

75

lN4449

75

1.0
1.0

-

1.0

1.0

1.0

-

-

Reverse
Current
VRnA

Reverse
Raverse
Junction Recovery
Current
@ 150"C Capacitance Time
@ OV
VRfCA
tRR

20

25

20

50

4pF

4nS

50

50

50

50

4pF

2nS
2nS

25 100

4pF

20

25

20

50

4pF

4nS

20

25

20

50

4pF

4nS

1.0

20

25

20

50

4pF

4nS

-

20

25

20

50

2pF

4nS

25 100

MECHANICAL SPECIFICATIONS

00·35

nn

L.::::::!J
5·20

SEMICONDUCTOR
PRODUCTS

_UNITRODE

IN4152,lN4305,lN4444

COMPUTER DIODESwitching

ABSOLUTE MAXIMUM RATINGS, AT 2S·C

FEATURES
• Metallurgical Bond
• Planar Passivated
• 00·35 Package

lN41S2
lN430S
lN4444
Peak Reverse Voltage ....................................................... 40V ............ 75V ............ 70V ......
Reverse Working Voltage ................................................. 30V ............ 50V ............ 50V ..... .
Average Rectified Current ................................................................. 200mAdc ...................... .
Surge Current, B.3 mS .......................................................................... 500mA ........................ .
Operating Temperature Range ................................................. -65·C to +150·C .............. .
Storage Temperature Range ..................................................... - 65·C to + 200·C ...............

DESCRIPTION
This series offers Metallurgical Bonding
and Is very popular for general purpose
switching applications.

ELECTRICAL SPECIFICATIONS (at 2S·C unless noted)

Type

Peak
Inverse
Vollage
(V)

Forward
Vollage
@O.lmA

Forward
Vollage
@O.25mA

Forward
Vollage·
@ 1.OmA

Forward
Vollage
@2.0mA

Forward
Vollage
@lOmA

min

max

min

max

min

max

min

max

min

Forward
Vollage
@20mA

Forward
Vollage
@ 100mA

max

min

max

min

max

-

lN4152

40

0.49

0.55

0.53

0.59

0.59

0.67

0.62

0.70

0.70

0.81

0.74

O.BB

-

lN4305

75

-

-

0.505

0.575

0.55

0.65

0.61

0.71

0.70

0.B5

-

-

lN4444

70

0.44

0.55

-

0.56

0.68

-

-

0.69

0.B2.

-

-

Reverse
Currenl

-

Reverse
Current
@ 150·C
VR
"A

Junction
Capacitance
@
OV

Reverse
Recovery
Time

2nS

Type

VR

(nA)

lN4152

30

50

30

50

2pF

lN4305

50

100

50

100

2pF

2nS

2pF

7nS

lN4444

50

50

50

50

0.85

1.0

I"

MECHANICAL SPECIFICATIONS
00·35

nn

SEMICONDUCTOR

~ PRODUCTS

5·21

_UNITRODE

COMPUTER DIODE

IN4153, JAN, JANTX & JANTXV IN4153
IN4534, JAN, JANTX & JANTXV IN4534

150mA

Switching Diode

FEATURES

DESCRIPTION

•
•
•
•

This device is particularly suited to
applications where tightly -controlled
forward characteristics and fast recovery
time are important.

Metallurgical Bond
Qualified to MIL-S-19500/337
Planar Passivated Chip
DO-34 or DO-35 Package

ABSOLUTE MAXIMUM RATINGS, AT 25·C

Reverse Breakdown Voltage ___________________________________________________ 75V
Peak Working Voltage __________________________________________________ ........ 50V

Average Output Current" ................................................... 150mA
Surge Current, 1ps
.................................... , ................... 2.0A
Operating Temperature Range ........... ; ........................ -65'C to +200'C
Storage Temperature Range ................... , .................. ,.65·C to +200·C
'Derate O.86mAdc1"C for TA above 25'C.

MECHANICAL SPECIFICATIONS
J, JTX & JTXV lN4153
J, JTX & JTXV lN4534

A
B

c
0

J. JTX & JTXV IN4534
INCHES
MILLIMETERS
.050-.075
1.27-1.91
.080-.120
2.03-3.05
1.0-1.5
25.4-38.1
.018-.022
.46-.56

A
B
C

0

00-34

00-35
lN4153

lN4534

J JTX & JTXV IN4153
MILLIMETERS
1.42-1.91
3.56-4.57
25.4 MIN.-38.1 MAX.
.46-.56

INCHES
.056-.075
.140-.180
1.0 MIN.-1.5 MAX.
.018-.022

nn

SEMICONDUCTOR

~ PRODUCTS

5-22

_UNITRODE

IN4153, JAN, JANTX & JANTXV IN4153
IN4534, JAN, JANTX & JANTXV IN4453

ELECTRICAL SPECIFICATIONS (at 25'C unless nuted)
Limit

VFI
IF = 100pAde

Vn
IF = 250 pAde

VF•
IF= 1 mAde

V",
IF=2 mAde

VFS
IF=lOmAde

VF•
IF=20mAde

Min
Max

O.490Vde
O.S50Vde

O.530Vde
O.590Vde

0.590Vde
O.670Vde

0.620Vde
O.700Vde

O.700Vde
O.810Vde

O.740Vde
O.880Vde

Limit

IR
VR = 50V

IR2
VR= 50V
T.= 150°C

Min
Max

-

-

-

0.051lAde

50llAdc

2.0pF

C
VR= 0
f = IMHz

TJ

.§ 100

= 175'e-V

t-

Z
uJ
0:
0:

/
V

~0:

I

1.0

I
.1

0:
0:

100'C

:J
t.>
uJ

III

0:
uJ

II / /

0.1
.2

.5
1.0

>

uJ
0:

I

'1

-- -

2sle

./

f--'

J

I
100'e

V r-

_r-

~

I

~

I

.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0

1.1

1.2

1.3

1.4 1.5

v, -

FORWARD VOLTAGE (VI

Production
Process
1. Raw Material
2. Factory
Processing

.....

~5'el

-" 10
I
V
20
f- l 50
V
I
100 II
140 130 120 110 100 90 80 70 60 50 40 30 20 10 a

/ I

V, -

V

t-

zuJ

25'C

j

II

/

1 .05

II

/

-

ITJ I

.005
0.01
.02

~ /'"

II

-"

75V

Reverse Voltage vs. Reverse Current

1'-- --65"C

II

10

0:

ou.

~

V/

::>

~

v~

-

0.001
.002

1000

2

Reverse
Breakdown
Voltage
IR = 5.0pAde

4ns

Forward Voltage vs. Forward Current

;(

t"
IF = IR = 10mAde
RL = 100 ohms

---I~.

Inspection Lot
Formed at
Final
Assembly
Operation

REVERSE VOLTAGE (V)
(% OF PIV)

*100 Percent Process
Conditioning
1. High-Temp Storage
2. Temp Cycling
3. Hermetic Seal Tests

-

*100 Percent Burn-In

1. Measurement of

Inspection Tests
to
Verify LTPD
Group A
Group B

Specified Parameters
2. Burn-In
3. Measurement of
Specified Parameters
to Determine Delta

---

*Order of the tests in the blocks shall be performed as shown.
Order of procedure diagrams for TX types only.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

5-23

PRINTED IN U.S.A.

IN4450, IN4451, IN44q3

COMPUTER DIODE
Switching

FEATURES
• Metallurgical Bond
• Planar Passivated
• 00-35 Package

ABSOLUTE MAXIMUM RATINGS, AT 25'C
1N44S0
1N44S1
1N44S3
Peak Reverse Voltage ...................................................... 40V ............ 40V ............ 30V ..... .
Reverse Working Voltage ................................................ 30V .:.......... 30V ............ 20V ..... .
Average Rectified Current ................................................................ 200mAdc ...................... .
Surge Current, 8.3 mS ......................................................................... SOOmA ........................ .
Operating Temperature Range ................................................ -65'C to +150'C .............. .
Storage Temperature Range .................................................... -65'C to +200'C .............. .

DESCRIPTION
This series offers Metallurgical Bonding
and Is very popular for general purpose
switching applications.

Ei.ECTRiCAi. SPECiFiCAliONS (at 2S"C unless noted)

Type

Peak
Inverse
Voltage
(V)

Forward
Voltage
@O.01mA

Forward
Voltage
@O.1mA

min

max

min

Forward
Voltage
@ 1.0mA

Forward
Voltage
@10mA

max

min

max

Forward
Voltage
@ 100mA

min

max

min

max

1N4450

40

-

0.54

0.52

0.64

0.64

0.76

0.80

0.96

40

-

0.42

1N4451

0.40

0.50

0.51

0.61

0.62

0.72

0.75

0.875

1N4453

30

0.43

0.55

0.51

0.63

0.60

0.71

0.69

0.80

0.80

0.92

Reverse
Current
@ 150"C
VR

Reverse
Current

/1"

Juncllon
Capacllance
@
OV

Reverse
Recovery
Time

4pF

4nS

Type

VR

(nA)

1N4450

30

50

30

1N4451

30

50

30

50

6pF

10nS

1N4453

20

50

20

50

30pF

-

50

ForWard
Voltage
@200mA

Forward
Voltage
@300mA

min

max

min

-

1.0

-

-

-

-

1.0

.

_.

max

-

I"

MECHANICAL SPECIFICATIONS
00·35

nn

SEMICONDUCTOR

~ PRODUCTS

5·24

_UNITRODE

IN4452, IN4607, IN4608

COMPUTER DIODE
High Conductance

DESCRIPTION
This series offers Metallurgical Bonding
and is specifically designed for high
conductance switching applications
such as core memories.

FEATURES
• Metallurgical Bond
• Planar Passivated
• High Conductance
• DO-35 Package
ABSOLUTE MAXIMUM RATINGS, AT 2S"C

lN4452
lN4607
lN4608
Peak Reverse Voltage ......................................................... 40V
85V
85V
Reverse Working Voltage ...................................................... 30V
50V
50V
Average Rectified Current ............................................................. 400mAdc ................. 500mAdc ..
Surge Current. 8.3 mS .................................................................... 1A ............................. ..
Operating Temperature Range ............................................................. -65"C to +150°C ............... ..
Storage Temperature Range ................................................................ -65°C to +200°C ............... ..
ELECTRICAL SPECIFICATIONS (at2S"C unless noted)

Type

Peak
Inverse
Voltage

Forward
Voltage
@O.lmA
min max

Forward
Voltage
@l.OmA·
min max

1N4452
1N4607
1N460B

40V
85V
B5V

0.4210.54
0.39 0.50
0.39 0.49

0.51 10.62 0.60 10.71 0. 71 o.B3
0.50 0.60 0.61 0.72 0.74 0.B7
1.0
0:95
0.50 0.60 0.61 0.71 0.74 0.85 0.81 0.93 0.B4 0.96

Type

Forward
Voltage
@ 600mA
min max

Forward
Voltage
@ lOOOmA
min max

1N4452
1N4607
1N460B
• In @ I, = I,

Forward
Voltage
@lOmA
min max

Forward
Voltage
@lOOmA
min max

30 150
50
100
50
100

Reverse
Current
@ lOO°C

Reverse
Current
@l50°C

VR

VR

/lA

50
50 1 25
25

Forward
Voltage
@350mA
min max

0~11

l

Reverse
Current
VR
nA

Forward
Voltage
@250mA
min max

/lA

-1-

Forward
Voltage
@400mA
min max

Junction
Capacitance
@
OV

Reverse
Recovery
Time
trr

4pF
4pF

50nS
10nS
IOnS

=10

Forward
Voltage
@500mA
min max

=I~

=lOrnA, I..e =lrnA

MECHANICAL SPECIFICATIONS

00-35

n nPRODUCTS
SEMICONDUCTOR
L::::J
5-25

_UNITRODE

--

COMPUTER DIODE

IN4500, JAN & JANTX IN4500

500mA
Switching Diode

FEATURES
• Metallurgical Bond
• Qualified to MIL~S-19500/403
• Planar Passivated Chip
• 00-35 Package

DESCRIPTION
This device is a fast switching. high conductance diode for military, space, high rei
and other systems.

ABSOLUTE MAXIMUM RATINGS, AT 25'C
Reverse Breakdown Voltage ........................................................................................... 80Vdc
Peak Working Voltage .........................................:................................................................ 75Vpk
Average Output Current ............................................................................................ 300mAdc
.Surge Current, lsec· ................................................................................................................ O.5A
ll'sec ................. :............................................................................................. 4.0A
Operating Temperature Range .....
.. ............................ :................. -65'C to +175'C
Storage Temperature Range ...................................................................... -65'C to +200'C

MECHANICAL SPECIFICATIONS
J & JTX 1N4500

00-35
IN4500

A

-.l.

=~II

0

p=4=

Tf---B --+-c~

A
B
C

o

INCHES
.060-.107
.140-.300
1.0 MIN.-1.5 MAX.
.018-.022

MILLIMETERS
1.52-2.72
3.55-7.62
25.4 MIN.-38.1 MAX.
,46-.56

nn

SEMICONDUCTOR

~ PRODUCTS

5-26

_UNITRODE

IN4500. JAN & JANTX IN4500

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

c
Limits

VF1
IF = 250pAdc

VF2
IF = 1.0mAdc

VF1
F=10mAdc

VF4
IF=20mAdc

VF,l/
IF = 300mAdc

mVdc
470
560

mVdc
520
600

mVdc
640
720

mVdc
670
770

Vdc

Minimum
Maximum

Bv

I.
V.=75Vdc

I. = 51'Adc

nAdc

Minimum
Maximum

pAdc

nsec

100

/;

;;:
§.

...z

100

C

0.001
.002

~£

'- --GS'C

/ / /- irf II

/

~

2S'C

100'C

c:


UJ
c:

1.0

-"

10

-l--

-:--

2sb

V V

I

Lots proposed
for
non-TX
types

./

--

,,- V/

J

I

I--- I-- I--

V

100<;.;::

-

.L ' - -

r ,t::V-

v, -

....

__ f--""

5
50
I
100 I
140 130 120 110 100 90 80 70 60 50 40 30 20 10 0

FORWARD VOLTAGE (V)

Inspection lots
formed atfinal
assembly operation
(sealing)

0.1
.2

I

~ -cis'c'

20

I

.5 .G .7

v, -

c:
c:

0: .5
"'>0: .2.1
"' .05
.5
.02

...

-

--

500
200

I

l1ljoC

lOO
50

~
!Z

20

,.".

10
5
0:
"'0: 2
::J
1
(,)
.5
II>
0:
>
"' .2
"'0: .05.1
.5
.02
.01
.005
.002
.001

100°C

lOD°C

"'

'lso C

.01

_6So C

.005
.002
.001
10 20 30 40

50

60 70 80

90

100 110 120 130 140

L

_6So C

10

20

30 40

50

60 70

80 90 100 110 120 130 140

PERCENT OF REVERSE WORKING VOLTAGE (%)

PERCENT OF REVERSE WORKING VOLTAGE (%)

UNITROOE. SEMICONOUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA 02172
TEL. (617) 926·0404. FAX (617) 924-1235

'l1j0C

5-31

PRINTED IN U.S.A.

..

COMPUTER :DIODE

BAW24-BAW27
BAW75-BAW76

Switching

DESCRIPTION
This series offers lVietaliurgical Bonding
and is very popular for general purpose
switching applications:

FEATURES
• Metallurgical Bond
• Planar Passivated
• 00-35

ABSOLUTE MAXIMUM R~TINGS, AT 25"C
BAW24
BAW25
BAW26
BAW27
BAW75
BAW76
Peak Reverse Voltage ............. , .......... '... 50V ........... 50V ........... 75V .........•. 75V ........... 35V ........... 75V
Average Rectified Curre"t .................... 600lTlA ....... 600mA ....... bOUmA ....... 600mA.; ..... 300rnA ....... 300mA
Peak Forward Current ......... : .............. 400mA ....... 400mA ....... 400mA ....... 400mA ..... ;. 500mA ....... 500mA
Operating Temperature Range ................................................. -65"C to +150"C.; ............................ .
Storage Temperature Range ........... , .................................... ; ... -65"C to +200"C; .............................. .

ELECTRICAL SPECIFICATIONS (at 25"C unless noted)
Forward Voltage
(Max V)

Peak
Inverse
Voltage
Type

(V)

@30mA

BAW24

50

-

@50mA '
1.0

BAW25

50

-

BAW26

75

BAW27

75

-

BAW75'

35

'1.0

BAW76

75,

-

Reverse
Current

Junction
.Capacitance
@OV

Reverse
Recovery
Time
tRR

@ 100mA

@200mA

(V.,

(IlA)

(pF)

(nS)

-

40

0.1

4

6

0.8

-

-

40

0.1 .

4

6

-

1.0

-

60

0.1 .

4

6

-

1.0·'

40.

0.1

4

6

-

35

5.0

4

4

75

5.0

2

4

--

1.0

.

..

,~

MECHANICAL SPECIFICATIONS
00-35

nn

SEMICONDUCTOR
.~ PRODUCTS

5-32

_UNITRDDE

BAY41-BAY43
BAY60
BAX12

COMPUTER DIODE

Switching
FEATURES

DESCRIPTION

• Metallurgical Bond
• Planar Passivated
• DO·35

This series offers Metallurgical Bonding
and is very popular for general purpose
switching applications .

ABSOLUTE MAXIMUM RATINGS, AT 25°C
BAV41

BAV42

BAV43

BAV60

BAX12

Peak Reverse Voltage •...........................• 40V ............. 60V ............. 80V ............. 25V ............. 90V
Average Rectified Current ........................ 225mA .......... 225mA .......... 225mA .......... 115mA .......... 400mA
Peak Forward Current. ........................... 600mA .......... 600mA .......... 600mA .......... 225mA .......... 800mA
Operating Temperature Range ................................. -65°C to + 150°C ............................................... .
Storage Temperature Range ............................•...... -65°C to +200°C .............•..................................

ELECTRICAL SPECIFICATIONS (at 25"C unless noted)

Type

Peak
Inverse
Voltage

Maximum
Forward Voltage

Reverse
Current

Reverse
Recovery
TimeTrr
Condition
10/10/1

@ 10mA

@30mA

@50mA

V

V

V

V

V

V

VR

IlA

pF

ns

-

-

-

1.0

-

40

5

5

8.5

-

-

-

1.0

-

60

5

5

15

-

-

-

1.0

-

80

5

5

15

V

@ 100mA @200mA @400mA

Junction
Capacitance
@OV

BAY42

60

BAY43

80

-

BAY60

25

-

1.0

-

-

-

-

25

.1

4

4

BAX12*

90

.75

-

.84

.90

1.0

1.25

90

100

20

15

BAY41

40

*Maximum reverse energy 5mW/second.

MECHANICAL SPECIFICATIONS

00·35

I
nn

SEMICONOUCTOR

~ PROOUCTS

Q-33

_UNITRODE

..

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PIN DIODES

Product Selection Guides ..................................... , ..... 6-3
Mechanical Specifications . ....................................... . 6-6
Datasheets .................................................... 6-10

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PIN DIODES

PRODUCT SELECTION GU I DE

For applications information, see PIN Diode Designers' Handbook and Catalog (PD-5OOC)
SWITCHING PIN DIODES

0.5
0.5

10

10

1.7

300

0.4
2.5

350
300

1.0

200

0.6
0.25

150
70

6
4

5.0
5.0

25
25
35

0.6

15
15
15

1.0
1.0
2.5
2.0
1.5

HIGH POWER AITENUATOR & MODULATOR PIN DIODES

LOW CAPACITANCE SWITCH AND AITENUATOR PIN DIODES

LOW DISTORTION AITENUATOR PIN DIODES

TWO WAY ,RADIO ANTENNA SWITCHES

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-

PRODUCT SELECTION GUIDE

PIN DIODES
For applications information, see PIN Diode Designers' Handbook and Catalog (PD-500C)
LDW RESISTANCE ANTENNA SWITCHING PIN DIODES

MICROSTRIP PACKAGED PIN DIODES

RADIATION DETECTOR

PACKAGE STYLES

L -_ _ _ _ _(}~_ _ _ _~

====

1II 241
---.l
.

~

11%1 HE..

=\=9=5l=!\

X=.

.292.274
MAX·,264
17.42116.961
MAX. 16.711

13.021 .119
12.821 .111

cu RIBBON

t

.190
.IBO
14.B31
14.571

CATHODE

(2 PLACES)

:m

(.035) MAX. TO
FIRST FULL THO.

CATHODE

X

:gg~ TH~

g:~~l x ::~~:

4·40NC·2

4·40NC·2

STYLE E
RIBBON LEADS

I~11;~1-1
MIN.

~
'L...X'-------"~~---=+-i
:T

,090 x .017 THK
.OBO
.015

YELLOW

:~:~;: x ::~:

CATHODE MARK

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UM6000 UM6200 UM6600

MECHANICAL SPECIFICATIONS
.094
.104
(2.39)

STYLE A

STYLE B

(2.64)

TO GLASS

cO..

MAX.

1.751

.975
5.08
124.81 +1.2001
MAX.

t

.975
124.81
MIN.

1

=~=
11DIA.~781

MIN'l~! 1
LJdI i

008 1.201

.070 11.;81
DIA.

r
~I .j'N I,
.040

--,--

11.021

.070

MAX.

OIA.
MAX .

YELLOW CATHODE BAND

,019,,021
1.482,,5301

..

BLACK

\

CATHODE OO·T

.0315

.0295

STYLE C
CARTRIDGE

.225
i;07521

.064

i~~~1

STYLE E

I--- 15.2111 .095
.083
f.-- 12.411

11.521 ----

-1"

.06411.~:1··· .-~'I Jr

.06011.521-OlAf

.12513.181
.115 (2.92)
CIA.

~

..- .

.200

I~~~.I

L'.

(2.121

I

t ~1~I t- ~~N81l

.975

RIBBON LEADS

~

.975

r7c=::J
1

I

LJC
r
I .0701
(1.631.064
11.521.060

11271

:231

(1:02) X(:,81 THK

. OIA.

:g~g

12.131.084

:gg~

11.7 81 1

~!~'.

YELLOW
CATHODE MARK

16-~!.'-074

CATHODE

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UM4900
MECHANICAL SPECIFICATIONS (continued)

UM 4900 Series
Dimensions -

English/Metric

STYLE A

STYLE B

.094
.088
12.39}
12.24}

r

TYP

.014 1.36} MIN .

. 125 13.18} TOGLASS~I>-I
OIA.
MAX.

~

-=:.:.rt,

BLACK
u...-"'4Tunn~

II

I

f = U -·iioT-l 12.321 OIA.

12.271
.0915
.0895

STYlE C
STUD

STYLE D
INSULATED STUD
.159
.154

r-

:~:g~: ~ 11.24}
i~:'i5}
OIA

r
.035
1.89} MAX. TO

I

MIN. T Y P . !

13.18}xll.5~T
4'==F==',.125 DIA. x .060
BeO CERAMIC

1

.:

,r'--T~,

1500} 197

FIRST FULL THO. \ r............-

.600
115.2}

I

.053

......--i"i'93!14:50l :177

.:==::1==::~:;:::::::::;:rL..J. llT15}+

.076
.069 14.75}.187

CU RIBBON '2 PLACES)

:30~~lx :~i~:

4.40 NC.214tOl.177

.128
.121

j

222
:~g~. 15.641
15.18·I MAX .
14.981

I

1

-.035--,
1.891 MAX. TO 14.831 .190
FIRST FULL
1457} 180

.J .

THO

THK

.008
.005

4·40 NC·2

STYLE E
RIBBON LEADS

.975

~

I--- 124.81 -1..
I

MIN.

lJ.

.200
.975
15.081..1.-- 124.81
MAX.

:=TO
13.291 X 1.431 THK
12.031 1.381
.090
.017
.080
.015

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MIN. - - ,

[=:J
OIA.

YELLOW

MAX.

CATHODE
MARK

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UM7000 UM7100 UM7200 UM7300
MECHANICAL SPECIFICATIONS (continued)
UM7000 UM7100 UM7200 SERIES
UM7300 SERIES
Dimensions -

English/Metric

STYLE A

STYLE B

.125
.140

L(3'18Ij
(3.581

TVP.
.020 1.51 MIN.!

TOGL~r-

~

TFo2

.090 (2.291

CIA.
MAX.

g:~I~

~

.975 j.25O
(24.81
(6.351
Mli'..1..!. MAX.

t1
.975
124.81
MIN.

~c::::=::J

~

-r-.055

.029 1.741
.027 1.711

.0465
BLACK.
.0445 CATHODE DOT

CIA.

11.401 ]
OIA.
MAX.

YELLOW

T090
i2.291

L

CATHODE BAND

CIA.

MAX.

STYLEC
STUD

STYLE D
INSULATED STUD

.100

.187
(4.751 HEX.

I:r:;;;lr-

lOlA.

if:1

~(15.21.600 ~
r-MIN. TVP.

[1.991

~
I
I

\

,--

I

(3.181 x (1.521 THK
(6.kol
.125 OIA x .060
.260
.241 (6.1~AX .

T

*='*== ",<==::;/>;==;"'=:"800 CERAMIC

(6.101 .240
.035
....-"=='--T......
(5.461 .215
1.891 MAX. TO
(2.441 .096
FIRST FULL TH·O·l '-',--_,...--' (2.291.090

----1_

~

t-

.231 (5.871

I

(6.351.250

CU RIBBON (2 PLACES)

(5:911.235

(0.131 .005 THK
(0.151.006
.

440NC._2_ _ ~

4-40NC'2

./

CATHODE

STYLE E
RIBBON LEADS

I

~

.975
124.81
MIN.

1.

250
16.351
MAX.

~

.975
(24.81
MIN.

~~

1

-rD~CJ
~090

.070 x (.28) THK.OIA.
.060
(.23)
MAX.
(1.78) X .011

(1.52)

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1 N5767 (5082 - 3080)SERI ES
1N5957 SERIES

PIN DIODE

Features
• Useful attenuation from 1 jAA. to 100 mA bias.
• Capacitance below 0.4 pF.
• Low distortion in switches and attenuators.
• Rugged Unitrode construction.
Description
The 1N5767 and 1N5957 PIN diodes are switch and attenuator applications.
based upon iow capaciiance PiN chips
The' N5957 is primarily used as an attenudesigned with long minority carrier lifetime, . ator PIN diode and is particularly suitable
and thick intrinsic width. Thus operation as wherever ';current controlled, wide dynamic
low as 1 MHz is possible with low distortion. range resistance elements are required. The
Additionally, the low diode capacitance
1N5957- has also been characterized for the
allows useful operation well into the micro- 75Q attenuator, commonly employed in CATV
wave frequency range.
systems.
The 1N5767 (5082-3080) is a general purpose low power PIN diode designed for both

MAXIMUM RATINGS

Reverse Voltage
(V R) - Volts
(IR = 10 IAA)
Average Power Dissipation: (25 'C)
Free Air (P,J

100V

. 400 mW (Derate linearly to 175 'C)

Operating and Storage Temperature Range

nn

SEMICONDUCTOR

~ PRODUCTS

6-10

_'UNITRDDE

1N5767 (5082-3080) 1N5957
Electrical Specifications (25 DC)
Test

Symbol

1N5767
(5082·
3080)

1N5957

Total Capacitance (Max)
Series Resistance

Cr
Rs

Series Resistance

Rs

Series Resistance

Rs

Carrier Lifetime (Min)

T

0.4 pF
1000Q(min)
2000Q(tyP)
SQ(max)
4Q(typ)
2.5Q(max)
1.5Q(typ)
1.0 JAS

IR

10,..A

Reverse Current (Max)
Current for Rs
75Q
(typ)
Return Loss (typ)

=

-

30dB

0.4 pF
1500Q(min) .
3000Q(typ)
SQ(max)
6Q(typ)
3.5Q(max)
2.0Q(typ)
1.5(min)
2(typ)
10,..A
O.S mA1.2 rnA
30 dB

-

-40dB

-50dB

-60dB

-65 dB

175

Second Order Distortion
(typ)
Third Order Distortion (typ)

0.7 rnA

RESISTANCE
VS FORWARD CURRENT
(TYPICAL)
~

I"

Conditions

50V,1 MHz
10 ,.,A, 100 MHz
20 rnA 100 MHz
100 rnA, 100 MHz

k

=

10 rnA
V R = Ratin~

Rs = 75Q
Diode terminates
75Q line
Bridged tee attenuator
atten.
10 dB
50 dBmV
Pin
f; = 10 MHz,
f2 = 13 MHz

=

=

FORWARD VOLTAGE
VS FORWARD CURRENT
(TYPICAL)

,

I

100

lN5767

,'

L1L .3:

Li1i I,£~

i"

,
I'

'-

10.0

i

;(

:!

'I

oS
I-

1'571
I(~

1
0.001

llill
0.01

a:
a:

ac

i

a:

~

a:

I

0.10
1.0
Diode Current {mAl;>

10.0

-t-

j

Z 1.0
w

,

1~~9!7

J

0.10

,
i

~

100 .0

I

0.01

.L

0.00 1

a

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.2
.4
.6
.8
1.0
FORWARD VOLTAGE (VOLTS)

PRINTED IN U.S.A.

..

1N5767 (5082-3080) 1N5957

'lUTAL CAPACITANCE VI
REVERSE VOLTAGE
.8
~

.7

1l

!
·u.,

.6

""'

1 MHz

B

.5

"iii
~

.4

10~r-

.3

100 MHz

I

(5

5.M!":,z

i'

I

.2

5

iO

50

ZU

100

200

500

1000

V.- Reverse Voltage (V)

.PARALLEL RESISTANCE VS REVERSE VOlTAGE.
100

........ P'"~IJ~~

:!!.
CD
\J

"os
"iii

~

£100'MHz
-"",,,,,.

C:

50

...

"

II.

I--"

........

0:

]!
~
os

1.0G~z

:.3.0GHz

~-

20

I

Ii:
10

2

5

10

20

50

100

200

500 1000

V. - Reverse Voltage (V)

MECHANICAL SPECIFICATIONS

L_..._.

51 ~~=f~
(1.93)

(24.7)

I

1
I

.975

.021 (.530)
.014 (.356)
DIA .

MIN.

(24.7)

Dimensions: Inches (MllIlmeters)

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~RJNTED

IN U.S.A.

UM4000 SERIES
UM4900 SERIES

PIN DIODE
Features
.. Power dissipation to 37.5W
• Voltage ratings to 1000V
• Series resistance rated at O.5Q
• Carrier lifetime greater than 5",s
Description
The UM4000 and UM4900 series feature
high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially
suitable for use in low distortion switches
and attenuators, in the HF through S band
frequencies. While both series are electrically equivalent, the UM4900 series have
higher power ratings due to a shorter thermal
path between chip and package. High charge
storage and long carrier lifetime enable high
RF levels to be controlled with relatively low

bias current. Similarly, peak RF voltages can
be handled well in excess of applied reverse
bias voltage.
Both series have been fully qualified in
high power UHF phase shifters and megawatt peak-power duplexers, accumulating
thousands of hours of proven performance.
Both types have been used in the design of
antenna selectors and couplers, where inductive and capacitive elements are switched in
and out of filter or cavity networks.

MAXIMUM RATINGS
Average Power Dissipation and Thermal Resistance Ratings
Package

Condition

UM4000

25°C Pi n Temperature
A
B&E (Axial Leads) Y2 in. (12.7mm) Total Length
to 25°C Contact
B&E (Axial Leads) Free Air
C (Studded)
25°C Stud Temperature
D (Insulated Stud) 25°C Stud Temperature

Po
25W

6°C/W

12W 12.5°C/W
2.5W
25W
18.75W

Peak Power Dissipation Rating
All Packages
1 "'s Pulse (Single)
at 25°C Ambient

IOperating and Storage Temperature Range:

UM4900

fJ

6°C/W
8°C/W

Po
37.5W

fJ
4°C/W

12W 12.5°C/W
2.5W
37.5W
25W

4°C/W
6°C/W

100 KW
- 65°C to + 175°C

n. n

L:::::J
6·13

SEMICONOUCTOR
PRODUCTS

_UNITRODE

III

UM4000 UM4900
Voltage Ratings (25 GC)
Reverse Voltage
(VR) - Volts
(IR = 10/A Amps)

Types

100
200
400
600
1000

UM4901
UM4902

UM4001
UM4002

-

UM4906

UM4006
UM4010

-

Electrical Specifications (25 GC)

Test

UM4000
UM4900

Symbol

Total Capacitance (Max)
Series Resistance (Max)
Parallel Resistance (Min)
Carrier Lifetime (Min)
Reverse Current (Max)
I-Region Width (Min)

Conditions

3 pF
O.SQ
10 KQ
5/AS
10JAA
150/Am

CT
Rs
Rp
T

IR
W

100V, 1MHz
100mA,100MHz
100V, 100MHz
IF
10mA
VR
Rating

=
=

-

TYPICAL FORWARD RESISTANCE

vs
FORWARD CURRENT
(F = 100 MHz)

TYPICAL PARALLEL RESISTANCE CHARACTERISTIC
1000

/ ' MnZ

.i1 sao

t5

z

200

;: 100

§

C/)

w

~ lDD~II~IIII~lltl~11

iii

50

'"

20

;j

Ii;

/'

/

/'

/

:;;!

w

10

'"~

a::

o 10.0

---= ~

I

a::

~

1'D Mn•••n••
a::

.

o

0., .

.

.

.

.

-

f..--

","

2

10

Vo -

r--

..--100 MHz

~

'j

~/

~

20

MHz

V

/

./

----/

..J

(ij

7fo

/'

...___1 GHz

/'

50

......--~oo MHz

---

.100

3 GHz

200

500

1000

REVERSE VOLTAGE (V)

.

.01 L-J...LllWIL--'-I..l.JJ,1IIL..1...ll1J.LW..--L.l.I.JJJJW--LLLWIL...L.L.LLUJlI
lOrnA
lOOmA
lA
llJ.A
10J.lA
100pA
lmA

IF - FORWARD CURRENT

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UM4000 UM4900
POWER RATING
STUD MOUNTED DIODES

POWER RATING
AXIAL LEADED DIODE

40r---r---~--'----r---r--~--~

..
°0~~2~5--~ro~~7~5--~1~OO~~1~2~5--~~~
STUD TEMPERATURE lOCI

T L • LEAD TEMPERATURE (oC)

DC CHARACTERISTICS
FORWARD VOLTAGE
VS
FORWARD CURRENT (TYPICAL)

TYPICAL CAPACITANCE CHARACTERISTIC

1A

12

ii:'

....eu

10

~
U

8

z

«a..
«
u

...I

i~MHZ

I

~

4

-....::

cS

1100 MHz 2
5

2

10

v, -

"i 1

10.
5.0

.......

2.0

...u~
z
0

...;:!il
::;;
...a:
...
..."'
...

..

J:

I-

::;)

lOrnA

"
;:
a:

~

I

1

.!!-

~~

20

50

100

200

500

1000

1mA

I

100JJA

REVERSE VOLTAGE (V)

THERMAL IMPEDANCE
~

I

::>

t:; ~ ~

~

0

l-

'""

J~

6

I

l00mA

10jJA O

0.2

I 0.4

0.6

0.8

1.0

V F - FORWARD VOLTAGE IV)

UM4000
ORDERING INSTRUCTIONS

I:::;:F-" ~

1.0
.5

UM4900:=

Part numbers of Unltrode PIN Diodes consist of the
letters UM followed by four digits and one or two letters.
The first two digits Indicate the diode series, the next
two digits specify the minimum breakdown voltage In
hundreds of volts. The remaining letters denote the
package-style. Reverse polarity (anode large end cap) is
available for the C style and denoted by adding second
letter R•

•2

V

.1
.05
.02
.01
.005

I

I .002
_" .001

I I
10-6

10-5

10-4
10-3
10-2
PULSE WIDTH (SEC)

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PIN DIODE

UM4300 SERIES
UM7300 SERIES

For Attenuator Applications
Features
• Extremely low distortion performance
• Useful frequency range extends below 500 KHz
• Power dissipation to 20W (UM4300)
• Capacitance as low as 0.7 pF (UM7300)
• Voltage ratings to 1000V
Description
The UM4300 and UM7300 series combine a
diode chip of extremely thick intrinsic region
with a low thermal resistance construction,
This results in diodes uniquely applicable to
very low distortion linear attenuators and
specialized switching functions. The UM4300
series, with large cross-sectional chip area
offers the highest power capability, of the
two series. The UM7300 series offers lower
capacitance.

Both diode series are intended for use in
linear attenuators operating from HF to
beyond 1 GHz. Low distortion at low frequencies is a result of transit time frequencies
below 5 MHz.
Operated as RF switches, either diode
series can be operated at low dc reverse bias
voltages, to hold off much higher RF voltage
levels.

MAXIMUM RATINGS
Average Power Dissipation and Thermal Resistance Ratings
Package

A
B&E (Axial Leads)

B&E (Axial Leads)
C (Studded)
D (Insulated Stud)

Condition

UM4300
(J
Po

25°C Pi n Temperature
1f2 in. (12.7mm) Total Lead
Length to 25° C Contact
Free Air
25°C Stud
25°C Stud

Peak Power Dissipation Rating
All packages
1/As Pulse (Single)
at 25·C Ambient
Operating and Storage Temperature Range:

20W

7.5°C/W

10W
2.5W
20W
15W

15°C/W

UM7300
(J
Po

7.5W

4W 37.5°C/W
1.5W
7.5W
20°C/W
25°C/W
6W

7.5°C/W
10°C/W

100 KW

500 KW
- 65 DC to

20°C/W

+ 175 DC

nn

SEMICONDUCTOR

~ PRODUCTS

6·16

_UNITRDDE

UM4300 UM7300

Voltage Ratings (25°C)
Reverse Voltage
(VR) - Volts
(lR = 10~)

Types

100V
200V
600V
1000V

UM4301
UM4302
UM4306
UM4310

UM7301
UM7302
UM7306
UM7310

Electrical Specifications (25°C)
Test

Symbol

UM4300

UM7300

Total Capacitance (Max)
Series Resistance (Max)
Series Resistance (Min)
Carrier Lifetime (Min)
Leakage Current (Max)
I-Region Width (Min)

CT
Rs
Rs

2.2 pF
1.5Q
1000Q

T

61lS

IR
W

10,..A
250tJm

0.7 pF
3.0Q
3000Q
4.0tJS
10,..A
250tJm

Conditions
100V, 100MHz
100mA, 100MHz
10 ,..A, 100MHz
IF =10mA
V R = Rating

-

TYPICAL DC CHARACTERISTIC
FORWARD VOLTAGE
VS FORWARD CURRENT

TYPICAL FORWARD RESISTANCE
VS FORWARD CURRENT (F =' 100 MHz)
IA

I
10K

~

II

lOOmA

If

j

f0-

~1000
u

.
:;;
Z

in

~ 100

r-

~
~

~

l-

..~ ~
C

II:

t;
:::>
u
0:

• UM7300

C

3:

~ ·U~~~~O
111111

WI

~ 10.0
on

II:

1

lOrnA

Q

I"

o

..L LL

W

0:
0:

r-- fo"UM

0:

...
Q

IUIlI.

1111111

.Wl

1111111

1.0

IWIll

'HJ.l1I

I

~

UM73

.... .L
JI

ImA

.L

r-...

11

100ilA

IIllL

11111111

01

I1'A

10l'A

l00l'A

lmA

lOrnA

I 11111 I
l00mA

I I

lA

IF - FORWARO CURRENT

I If

10ilA

a

0.2

Q.4

0.6

0.8

1.0

1.2

1.4

VF - FORWARD VOLTAGE
UNITROOE • SEMICONDUCTOR PRODUCTS
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6·17

PRINTED IN U.S.A.

UM4300 UM7300
PARALLEL RESISTANCE VS REVERSE VOLTAGE
UM4300

UM7300
lOOK
SOl(

§

s:

~

20K

en

a:

51<

'"--'

:I

2K

..

500

UJ

~:.L

()

z lOOK
;:!

--'
UJ

UJ

.'"

IL

UJ

--'
--'

I--

10K

~

en

100MH;;m
0.5GHz
1.0GHz
3:0GHz

10K

~

I-'

IK

I

~

a:

l
'"

200

ILII

Lit

lilll

11111

IK

10

11111
1000

100

100

11111
10,000

5

2

10

50

100

1000

200

II!! -REVERSE \/OlTAGE M

RtVtH~t vOLTAGE ivl

VR -

20

TOTAL CAPACITANCE VS REVERSE VOLTAGE
UM4300

6.0

" l'j'l!l

.L;:

.e
w

UM7300
6

.

~

5MH z

u

1O!~~

--'

~
~

2.0

...I
u

11 'i!

;;:

l

~
UJ

~

u

~ 4.0
>--

I,

4

~

"\

<5

f\
f"'. r""~

~

3

!

NJ

5~Jz

--'

~
...

I

1 MHz

2

I

10 MHz

,

I
I

I

4
i

()

~

':>lOOMH z

0

I >l°OlIi

I~

i"'i!Io

II
10

2

o

II

r-- .....t'20

50

100

200

SOIl

1000

VR - REVERSE \/OlTAGE M

2

5

10

50

20

100

200

500

1000

VR - REVERSE BIAS VOLTAGE (V)

POWER RATING AXIAL LEADED DIODE
UM4300
16r----,--,.--r-

UM7300

~
Z

12

0

..

;::
..:

10

in

'"is
'"S-w

.
..
O
X

..:

:;
I
0

50

75

100

125

TL - LEAD TEMPERATURE 1°C)

TL - LEAD TEMPERATURE 1°C)
UNITRODE • SEMICONDUCTOR PRODUCTS

580 PLEASANT STREET· WATERTOWN, MA 02172
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6-18

PRINTED IN U.S.A.

UM4300 UM7300

UM43OO1UM7300
POWER RATING
STUD MOUNTED DIODES

NORMALIZED Rs VS TEMPERATURE

20

1.3

law
~

~
z
o

"

15W

15

ili
ca:

ca

"
"- "I"
I'"
," I"
""' I"
'"
-..........

u;

'iii

.
.

;;:-

~

:;;

.......

6W

o

'C
0

UM7300D

i5

~

...............

........... I""'-...

.!::!
iD
E

'" .,
~

25

50

75

100

125

150

/

V

V

V

/

V

.7
-60 -40 -20

~

o

/

.9

.8

~

o

1.0

0
z

~'\.

..............; to-..

/

'C

UM730QC

~

5

1.1

QI

a:

'\

lC

""

c:

I'\.

10

w

/""

1.2

()

"' \UM4300C

I'..

~UM4300~

i=
~

..

0

+20 +40 +60 +80 +100 +120

Temperature (Oe)

175

STUD TEMPERATURE (oC)

PULSE THERMAL IMPEDANCE VS PULSE WIDTH

~

ORDERING INSTRUCTIONS

100. 1-+1-Hf!!1I-++HIf1ll-l-++

e..

Part numbers of Unitrode PIN Diodes consist of the
letters UM toll owed by four digits and one or two letters.
The first two digits indicate the diode series, the next
two digits specify the minimum breakdown voltage in
hundreds of volts. The remaining leUers denote the
package style. Reverse polarity (anode on stud end) is
available in C or 0 Styles and denoted by adding second
letterR.

1.10'

I
~

~

.

~

For. Example:

.1.

'1 Series 73001

I

fStyleCl

Reverse polarity available in C style. Part number
designated by adding R.

.01 . . . . . .
10-'

UMJJt3i0l!GJ

~

10-'

PULSE WIDTH (sec)

UNITRODE· SEMICONDUCTOR PRODUCTS
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6-19

PRINTED IN U.S.A.

UM6000 SERIES '.
UM6200 SERIES
UM6600 SERIES

PIN DIODE
Features
• Capacitance specified as low as 0.4 pF (UM6600)
• Resistance specified as low as 0.4Q (UM6200)
• Voltag,e ratings to 1000V
• Power dissipation to 6W

Description
These series of PIN diodes are designed cessfully in switGhes in which low::insertion
for applications requiring small package size loss at low bias current is required. '
The "A" style package for this series is the
and moderate average power handling capability. The low capacitance of the UM6000 smallest Unitrode PIN diode package. It has
beeii USed successiuiiy in many microwave
and U~.1S500 allow-vs them to be used as series
switching elements to 1 GHz. The low resis- applications using coaxial, microstrip, and
tance of the UM6200 is useful in applications stripline techniques at frequencies beyond
where forward bias current must be mini- X-Band. The "B" and "E" style, leaded packages offer the highest available power dissimized.
pation for a package this small. They have
Because of its thick I-region width and
long lifetime the UM6000 and UM6600 have been used extensively as series switch elements in microstrip circuits. The "C" style
been used in distortion sensitive and high
peak power applications, including receiver package duplicates the physical outline
protectors, TACAN, and IFF equipment. Their available in conventional ceramic-metal
low capacitance allows them to be useful as packages but incorporates the many reliabilattenuator diodes at frequencies greater ity advantages of the Unitrode construction.
than 1 GHz. The UM6200 has been used suc--

MAXIMUM RATINGS
Average Power Dissipation and Thermal Resistance Ratings

Package

UM6000
UM6600

Condition

PD
A&C
25°C Pin Temperature
B&E (Axial Leads) 1/2 in. (12.7mm) Total Lead Length
to 25°C Contact
B&E (Axial Leads) Free Air

UM6200
(J

6W

25°C/W

2.5W
0.5W

60°C/W

PD

(J

4W 37.5°C/W
2.0W·
O.5W

75°C/W

-

Peak Power Dissipation Rating
All Packages

1 j.tS Pulse (Single)
at 25°C Ambient

Operating and Storage Temperature Range:

UM6000 '- 25 KW
UM6200 - 10 KW
- 65°C to

+ 175°C

n
L::::Jn
6-20

UM6600 - 13 KW

SEMICD.NDUCTD. R
PRODUCTS
.

_UNITRDDE

UM6000 UM6200 UM6600
Voltage Ratings (25 ac)
Reverse Voltage
(V R) - Volts
(lR = 10 IJA)
100V
200V
400V
600V
1000V

Types
UM6001
UM6002

UM6006
UM6010

UM6201
UM6202
UM6204

UM6601
UM6602

-

-

UM6606
UM6610

Electrical Specifications (25 ac)
Test
Total Capacitance (Max)
Series Resistance (Max)
Parallel Resistance (Min)
Carrier Lifetime (Min)
Reverse Current (Max)
I-Region Width (Min)

Symbol
CT
Rs
Rp
T

IR
W

UM6600
0.4 pF
2.5Q
300 KQ
1.0 !-IS
10 !-IA
150 !-1m

TYPICAL SERIES RESISTANCE
VS
FORWARD CURRENT
(F = 100MHz)

UM6000
0.5 pF
1.7Q
300 KQ
1.0 !-IS
10 !-IA
150 !-1m

UM6200
1.1 pF
O.4Q
350KQ
0.6 !-IS
10 !-IA
40 !-1m

Conditions
100V,1MHz
100mA,100MHz
100V, 100M Hz
IF
10 mA
VR
Rating

=
=

-

DC CHARACTERISTICS
FORWARD VOLTAGE VS CURRENT
lA

/

IL J

100 mA

...z

UJ
0:'
0:

I II

L

:::J

in

u

":z:

«

CI
0:

Q

10mP
, =UM6200

UM6000
UM6600

~

;;:

'"'"

0:

~
I

J

.!'lmA

I

J)

100l'A
FORWARD CURRENT

1

10l'A
o

0.2

0.4

0.6

O.B

1.0

1.2

V F - FORWARD VOLTAGE (VI

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
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6-21

PRINTED IN U.S.A.

..

UM6000 UM6200 UM6600
TYPICAL Rp VS VOLTAGE & FREQUENCY
UM6000/UM6600

UM6200

1000

100
100MHz

~\\
~

z

I-'

W

L>

100

z

I

a:

I-"
...... 1-'

...J

w

...J
...J

~

~

5QOMHz

illa:


0..

I
$

UNITRODE· SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

10- 5

10- 4
10- 3
10-2
PULSE WIDTH (SEC)

6-23

PRINTED IN U.S.A.

UM7000 SERIES
UM7100 SERIES
UM7200 SERIES

PIN DIODE

Features
• Voltage ratings to 1000V (UM7000)
• Wide variElty of package styles
• Rated average power dissipation to 10W
• Cost effective in volume applications
Description
The UM7000 and UM7100 series offer moderately high power handling in combination
with reasonably low levels of both series
resistance and capacitance. The UM7200
series offers the lowest series resistance,
but the highest capacitance of the group.
The differences in specified performance, for

each of the series, results from different
I.. region thicknesses. The three series have
broad applicability in many RF and microwave switch and attenuator circuits. Additionally, the UM7100 in leaded versions, is
usually the most cost-effective diode choice
in high volume usage.

MAXIMUM RATINGS
Average Power Dissipation and Thermal Resistance Ratings
Package
Condition
A
25°C Pin Temperature
B&E (Axial Leads) V2 in. (12.7mm) Total Lead
Length to 25° C Contact
B&E (Axial Leads) Free Air
C (Studded)
25°C Stud Temperature
o (Insulated Stud) 25°C Stud Temperature

PD
10W
5.5W

fJ
15°CfW
27.5°CfW

1.5W
10W
7.5W

15°CfW
20°CfW

-

Peak Power Dissipation Rating
All Packages

UM7000 - 60 KW
UM7100 - 35 KW
UM7200 - 20 KW

1 IlS Pulse (Single)
at 25°C Ambient

Operating and Storage Temperature Range:

- 65°C to

+ 175°C

nn

SEM. ICONDUCTO. R
~ PRODUCTS

6-24

_UNITRDDE

UM7000 UM7100 UM7200
Voltage Ratings (25°C)
Reverse Voltage
(VA) - Volts
(lA
10 JAA)

Types

=

100V
200V
400V
600V
800V
1000V

UM7001
UM7002

UM7201
UM7202
UM7204

UM7101
UM7102
UM7104

-

-

-

UM7006

-

UM7108

-

UM7010

-

Electrical Specifications (25°C)
Test

Symbol

UM7000

UM7100

UM7200

CT
Rs
Rp

0.9 pF
1.0Q
200KQ
2.5 IJS
10 I-lA
150 lAm

1.2 pF
0.6Q
150 KQ
2.0 lAS
10 I-lA
BOlAm

2.2 pF
0.25Q
70KQ
1.5 IJS
10 I-lA
40 lAm

Total Capacitance (Max)
Series Resistance (Max)
Parallel Resistance (Min)
Carrier Lifetime (Min)
Reverse Current (Max)
I-Region Width (Min)

T

IR
W

Conditions
100V,1MHz
100mA,100MHz
100V, 100M Hz
IF
10 mA
VFj
Rating

==
-

TYPICAL DC CHARACTERISTIC
FORWARD VOLTAGE
VS FORWARD CURRENT
UM70001UM71001UM7200

TYPICAL FORWARD RESISTANCE
VS FORWARD CURRENT
(F = 100 MHz)

lA
UM7100=
10.000

g

UM7200""-;

r&.1

II

l00mA

~UM7000

10::0

LU

u
Z

<

I;;
iii

z

0

:l

<
;:

0

10mA

U

a:

a:
<
;:
a:

10

0

IL

~

I

en

a:

1/

w

a:
a:

a:

a:

11

l-

1Id:o

LU

I

1.0

I
lmA

_IL

I

0.1
lj4A

1~

lOO1'A

lmA

lDmA

l00mA

I

lA
l00j4A

IF - FO_A·RiO CURRENT

10l1A

a

I
0.2

0.4

0.6

0.8

1.0

1.2

V F - FORWARD VOLTAGE IV)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
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6-25

PRINTED IN U.S.A.

UM7000 UM7100 UM7200
TYPICAL Rp CHARACTERISTIC

TYPICAL

UM 7000 SERIES

UM 7000 SERIES

IMr------.,------,-------,
§

3

LL
!l:-

UJ

U

~ lOOK

1----++----+------1

Iii
(ij

0.5 GHz

UJ

It:

~-:::;j..--l.0 GHz

-'
UJ

~

10K

=:!!$;::;:::::;O'=F=-----+---~

It:

rr.

I~

1 - _ - - + - - - 1 - 3 . 0 GHz

It:

w

u

z

IV

10V
100V
REVERSE VOLTAGE

2

""
~
""
e""

!::
u
U

f'
SMH,

-'

..........

10M

0-

1

~

u

lKLI______~______~________'

0

---

l00MH,

II
I

I 11111

§
LL
!l:-

UJ

U

lOOK· I-----+:JI'C---==-+- 0.5 GHz

w
u

1.0 GHz

""e:;
~
u
""-'

(ij

-'

UJ

~

rr.
Ie
It:

10K

I "I" I

100

III" I
1000

z

2

~I

~, ~~
[\
lO"'/tz
I--

i'-:\
....

0-

UJ

-'
-'

I

UM 7100 SERIES

3

It:

I

V.-REVERSE VOlTAGE (V)

UM7100 SERIES

en

t--

10

1000V

1M

~

Cr CHARACTERISTIC

+-=---+-----1-------1

~~

~IOOMH,

""e

00-

L

u

1 . - _ - - + - - - - 1 - 3 . 0 GHz
1K '--------"--______'--______'
1000V
100V
10V
IV

10

UM 7200 SERIES

10V
100V
REVERSE VOLTAGE

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

1000

UM 7200 SERIES

.1 K '--______. l -______--'-______--.J

IV

100

V.-REVERSE VOLTAGE (V)

REVERSE VOLTAGE

__-L_L~~~_ __L~~~U
1000
100
10
V. - REVERSE VOLTAGE (V)

O'--~~-LUU~

1000V

.1

6-26

PRINTED IN U.S.A.

UM7000 UM7100 UM7200
POWER RATING STUD MOUNTED DIODES
12

~

POWER RATING - AXIAL LEADED DIODES

~---r----~---'-----r----r----r--~

I.r---~----'-----r---~----'-----r----'

lOW
IO~---c~--~---r----~---r--~r---~

z

~

o

~

8

C
II:
W

6

7.5W

z

+-----f~---t;:..~__t--~+_--_+--__;

o

~iii

~

!!l

1

L = 3/8" (4.52Smml
B~--4-~~~~~----~~~-+--__;

c

~X

II:

""
~

~

x

I

«
:0

"-c

I

c

"-

o

25

50

75

100

125

175

STUD TEMPERATURE (oCI

o

25

75

50

100

125

150

175

PULSE THERMAL IMPEDANCE VS PULSE WIDTH
1~.'-------'---'---"-----'---'-----'

e~

~

z

= lS·C/W MAX.

10.t---- -r-----j------j------::::t;;;;;:!~~--i

i!§
LI.I

II..

~ 1nr---~r_--~7S~-1----_+----_+----_;
...J
<
:0
a:
LI.I

~ 0.1 t---?''"V'"-Z:

LI.I

Ih

...J

:::l

II..

om.~L-~L-

__

~

____

~

____

~

____

~

10-'
10-2
I"IJI..S£ IIIIDTH (SEC)

~

____

~

10- 1

ORDERING INSTRUCTIONS
Part numbers of Unltrode PIN Diodes consist of the
letters UM followed by lour digits and one or two letters.
The IIrsttwo .dlglts Indicate the diode series, the next
two digits specify the minimum breakdown voltage In
hundreds 01 volts. The remaining letters denote the
package style. Reverse polarity (anode on stud end) Is
available In C or D Styles and denoted byeddlng second
letter R.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

6-27

PRINTED IN U.S.A.

-

PIN DIODE

UM9301

COMMERCIAL ATTENUATOR DIODE
Features
• Specified low distortion
• Low rectification properties at low reverse bias
o Resistance specified at 3 current points
• High reliability fused-in-glass construction
Description
The UM9301 PIN Diode utilizes a special
overall chip geometry with an extremely
thick intrinsic "I" region, to offer unique
capabilities in both RF switch and attenuator
applications. Volume production also makes
the diode an economical choice suitable for
many commercial low power equipments.
The UM9301 has been designed for use in
bridged TEE attenuator circuits· commonly

utilized for gain and slope control in CATV
amplifiers. Low distortion and high dynamic
range are characteristic of the diodes'
outstanding performance.
The UM9301 is also appropriate for switch
applications, when little or no bias voltage is
available. Frequent applications occur in
portable 12 volt-powered communications
equipments, operating at frequencies as low
as 2 MHz.

MAXIMUM RATINGS
Reverse Voltage
(VR) - Volts
(lR = 10 IAA)

75V

Average Power Dissipation @ (P.J
Leads 112 in. (12.7mm) Total to 25°C Contact

1.0W (Derate linearly to 175°C)

Operating and Storage Temperature Range

nn

SEMICONOUCTOR

~ PRODUCTS

6-28

_UNITRODE

UM9301
Electrical Specifications (25 ·C)
Test
Diode Resistance

Current for Rs
Capacitance

Min

Typ

Max

Units

3.0
150

3000

1.7
80
5000

Q
Q
Q

0.5

1.1

2.0

mA

Rs

= 75Q
Cr

IR

0.8

Return Loss

Second Order Distortion

55

50

70
Third Order Distortion

75

Cross Modulation
Distortion

Reverse Current

-dB
-dB

65

-dB

= 100 mA, f = 100 MHz
= 1 mA, f = 100 MHz
= 0.01 mA, f = 100 MHz
f = 100 MHz
V = OV, f = 100 MHz
I
I
I

Frequency Range: 10 - 300MHz
Rs = 75Q @ 100 MHz
Diode Terminates 75Q line

= 10 MHz, f2 = 13 MHz
= 50 dBmV See Test Circuit
= 67 MHz, F2 = 77 MHz
= 50 dBmV, See Test Circuit
F1 = 10 MHz, F2 = 13 MHz
P = 50 dBmV, See Test Circuit

f1
P
F1
P

95

-dB

Triple Beat; 205 + 67 - 77 MHz
P = 50 dBmV, See Test Circuit

75

-dB

12 Channel Test
P =50 dBmV, See Test Circuit
Dix Hills Test Set

10

IR

4.0

Carrier Lifetime T

pF
dB

25

Conditions

/AA

V

JAS

I

= 75V
= 10 mA

DIODE RESISTANCE
VS DIODE CURRENT
(TYPICAL)

FORWARD CURRENT VS
FORWARD VOLTAGE
(TYPICAL)

1000

lOOK

III

10K

I II
100

(i)

E
.c

;;(

; 1000

c

'"

u

.5-

o

~

o
c

::J

Ui

·iii

£

"0

.LJM9301.

100

10

....

~~

;;;

~

~~

;f

;:

Q)

0

"0

u.

o

o

/

10

.1
.01

·.1

10

100

Diode Current (rnA)

UNITRODE • SEMICONDUCTOR PRODUCTS
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.5

.6

.7

.6

.9 1.0 1.1

Forward Voltage (Volts)

6-29

PRINTED IN U.S.A.

UM9301
TEST CIRCUIT FOR DISTORTION
MEASUREMENTS

NORMALIZED RS VS TEMPERATURE
1.3

1.2
CD

."

0

;;;
.;;; 1.1
a:

"
"

"C
0

Ci

1.0

"C

"
OJ
.~

.9

V

E

(;

z

/

/'

V

V

V

/

V

/"

D.U.T.

6600 pF

From
75P.
Input

O~~----------~~------~-----O

:: [ I I I I I I I I I
-60 -40 -20

Diode
Current
Supply

Note: Diode Current adjusted
for 10dS Attenuation

0 +20 +40 +60 +80 +100 +120
Temperature (DC)

TYPICAL BRIDGED TEE ATTENUATOR PERFORMANCE
DIODE CURRENT
VS ATTENUATION UM9301

DISTORTION
ATTENUATION
30

100

IIIII 1111
lJlillill

40
;( 10

.a6~

§.

Q;

(\\,s
s'(\>J

C

50

0"

~

:;

~

u:

"0

a;

70

'"
'""

80

3

"C

0

Ci
&'Sr,;
980'1.

0

'Q.

'"

I-

"0-9

.1

third order
distortion

60

0

OJ

second order
distortion

=

Input Power
+ 60 dBmV
Input Frequencies
10 MHz
& 13 MHz

90

III111111111111111

100
.01

a

o

=

2

2 4 6 810 12141618202224

4 6 8 10 12 14 16 1S 20
Attenuation (dB)

Attenuation (dB)

MECHANICAL SPECIFICATIONS

t

.975"

24.8mm

MIN.

=J

.250"
6.35mm

MAX.

r

-:=~~~~~~
_
. C::::==I
q:[J:D

.~90"

2.29mm

975"

24 . smm
MIN.

-l

\=

029"

.

I~ .027"

.74mm

DIA

.68min
.

tCATHODE
BAND

MAX.

UNITRODE • SEMICONDUCTOR PRODUCTS
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6-30

PRINTED IN U.S.A.

UM9401
UM9402
UM9415

PIN DIODE
COMMERCIAL TWO·WAY RADIO
ANTENNA SWITCH DIODES
Features
• Specified low distortion
• Unitrode ruggedness and reliability

• Low bias current requirements
• Priced for high quantity applications

Description:

Unitrode offers a series of PIN diodes specifically designed and characterized for solid
state antenna switches in commercial twoway radios. Antenna switches using the
UM9401 and UM9415 series PIN diodes provide high isolation, low loss and low distortion characteristics formerly possible only
with electromechanical relay type switches.
The UM9401 and UM9402 diodes can
handle above 100W of transmitter power,

while the UM9415 will handle over 1000W.
The extensive characterization of these PIN
diodes in antenna switch applications has
resulted in guaranteed low distortion specifications under transmit and receive
conditions. These diodes also feature low
forward bias resistance and high zero bias
impedance which are required for low loss,
high isolation and wide b.andwidth antenna
switch performance.

MAXIMUM RATINGS
UM9401
Reverse Voltage
(VR) - Volts
(IR = 10 JIA)

UM9415

50V

50V

-

lOW

50V

Average Power Dissipation (PAl
Lead Length - '/2 in. (12.7mm) Total
to 25°C Contacts
25'C (Package Flange) Temperature
Free Air

5.5W

1.5W

2.5W

- 65'C to

ELL.OWCATHOOE

UM940-li12 .

BAND

~

.090 12.29) Dia.

ma~

L I I J.

r'027('7~)
.055 D'i. max
L 0....
II .401

I

----.r

rD

_~_

0

.975

+ 175'C

:~: ~.~ :

UM9401

~

-

lOW

Operating and Storage Temperature Range

.029 1.74)

UM9402

W

.250Mn.

(24.81

(6.35)

MIn.

g::,r".,-"i-L-_--tY-_-_""'
J
m..

~

~.14,...Ih
.130
13.611
(l.JO)

UM9415

L

--I"
~'

--I I

.0121.301
.010(.251

I JOD, .. max

041 (104)

~,;'19"

F-

J

r-

,

.975

(248)

MIn.

i~5:,~ ~~:A~~'~Dv
D,a.
max.

~

-

JO

•

-

Ic:::::::J

I~J+--J
9/~

M1R

(248)

300

975

Max

Mill

062)

(:24 B)

n
n
L::::::J
6-31

SEMICONDUCTOR
PRODUCTS

_UNITRODE

..

UM9401 UM9402 UM9415
Electrical Specifications (at 25 ·C)
UM9401/UM9402
Test

Symbol

Min Typ Max Min Typ Max Units

Series Resistance

Rs

0.75 1.0

Diode Capacitance

CT

1.1

Parallel Resistance

Rp

5K 10K

T

1.0 2.0

Carrier Lifetime
Transmit Harmonic Distortion

UM9415

0.75 1.0

1.5

f = 100MHz typical
1- 50mA
f = 100 MHz
V - OV
f = 100 MHz
V.= OV
I - 10 mA

Q

pF

4
1K

Conditions

2K

Q

5

IlS

~,~

80

80

-dB PIN = 50W
f = 50 M Hz, I = 50 mAo

R2AB

60

60

-dB PIN = 10 mW, OV Bias
6.
........
IA = ;)U IVln", IB = ;) I MMZ

A

Receive Third Order Distortion
Reverse Lea~age Current
Forward Voltage

A

Ii:""

11.

~

10
1.0

10
1.0

IR
VF

V = 50V
IF = 50 mA

V

TYPiCAL DC CHARACTERISTIC

TYPICAL FORWARD RESISTANCE
VS
FORWARD CURRENT
(F = 100 MHz)

I

!OOrnA

"

lOrnA

;:;; 100
u

z

~
ilia::
i'!

.. . . . . . . .

F=

UM9415

UM9401/UM9402

"

10.0

~

~

II

HIOJlA

I
",'"

0.1

L....J....LLW&-'-.L.LL~:-'-'u.w~:'-'-~~L...U_o-L........._

10pA

100J,lA

1rnA

lOrnA

lOOmA

lO,.,A

1A

o

I.
0.2

0.4

0.6

0.8

1.0

V F - FORWARD VOLTAGE (VI

IF - FORWARD CURRENT

TYPICAL Rp CHARACTERISTICS
1000

TYPICAL CAPACITANCE CHARACTERISTIC
10

•
f---

VR

~ /1

-

2

g
w
"z

OV

--.L

~
iiia:

UM9415

• 1.
VR=SOV

...
......
«
a:

VR;' SOV UM9401IUM9402

10MHz

..
I

l00MHz

l000MHz

'NIl

"-

0

~

1

UM9401/UM9402
VR- SOV

.....
........

w

~=OV

,.....

/

100

..tUM941
VR =

sov

UM9401f941i~.
~VR=OV

'"

FREQUENCY

1

UM~1J ~~OV
10MHz

l00MHz

lGHz
FREQUENCY

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6·32

PRINTED IN U.S.A.

UM9401 UM9402 UM9415

POWER RATING
UM940119402

POWER RATING
UM9415

16r---r---r---.---r---'---'-~

14'---~--.----r---.---'---''--'

~

~

L=%"
12 ....-

~

........---+----l-------+-T,~ T,

z

Q 12~--+---+---+-~+---+-~+-~

~
ill

o

'iiic.

·iii

C
a:

rn

o

10~;;;';'~++

w

s:
f?

~

x

~

c..

~

6F===~~+-~~r74---+---+-~

I

~

,,.0

4

~;;;;;;~~:P-"";~~~~

I
o '--__-'----__...L__--'-__---L__---1____
o
~
~
~
100
1~
1~

OoL-~~~~~~--~--~--~~

L-~

125

1~

TL - Lead Temperature (Oe)

150

175

T L - HEAT SINK TEMPERATURE (OCI

MAXIMUM TRANSMlnER POWER'
UM9415
I - I-Zo

~

~100

J

or- I--

I I;",~ J
l
f",

Iii

::::l

E

~

r!.: ~ IIt4 .......
lT~

r-

100

SOO

-

t-Z""Oo

a

r-I--. I, '" 6(11)"1
~

,

= co

I

I

I

"

~

'-

IF - 100 rnA
IF 50 rnA

1"-

"' I"

b..
0

.~

--

....... s

~

.........

'"'"'\

I'--- t'-- '\

IF

~

I

.....

10

2.

so

7'

100

12.

20 rnA

IF = 10mA

00

'.0

75

50

7':1

100

175

150

TL - Lead Temperature (Oe)

TL - Lead Temperature (Oe)

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TEL. (617) 926·0404 • FAX (617) 924·1235

I

~ t-IF=200mA
j-.:...
I

.....

....

,

Z. = 50. L = '12" (12.7 mm).

I-

"I

l

t-.

.:e

E
rn
r::
cu
j!::
E

= 5Og.o= .... l = Yz"

UM9401/UM9402

,

6-33

PRINTED IN U.S.A.

UM9401 UM9402 UM9415
Maximum Transmitter Power
The maximum CW transmitter power,
PT(max), a PIN diode antenna switch can handle depends on the diode resistance, Rs,
power dissipation, Po, antenna SWR, 0, and
nominal impedance, Zoo The expression
relating these parameters is as follows:

PT(max) -_ Po

x
Ro

Zo

(0;0

1)

2

[Watts]

Characteristic curves are shown in the
data section which give both the maximum
and typical diode resistance, Rs as a
function of forward current. The maximum
power dissipation rating of the PIN diode
depends both on the length of the diode
leads and the temperature of the contacts to
which the leads are connected. A graph
defining the maximum power dissipation at
various combinations of overall lead length
(L) and lead temperature (T J is given in the
data section. From these curves and the
above equation, the power handling
capability of the PIN diode may be computed
for a specific application.
Curves are also presented which show the
maximum transmitter power that an antenna
DC SUPPLY

switch using UM9401s and UM9415s can
safely handle for various forward currents
and lead temperatures. These curves are
based on a typical ~esign condition of a V2
in. total. overall lead length, 50Q line
impedance and a totally mismatched
antenna (0 = co). For the case of a perfectly
matched antenna, the maximum transmitter
power can be increased by a factor of 4.
DeSign Information
A circuit configuration for a two-way radio
antenna switch using PIN diodes consists of
a diode placed in series with the transmitter
and a shunt diode placed a quarter wavelength from the antenna in the direction of
the receiver as shown. For low frequency
operation, the quarter wave line may be
simulated by lumped elements. Typical performance of antenna switches using PIN
diodes forward biased at 100 mA is less than
0.2 dB insertion loss and 30 dB isolation
during transmit; at zero bias the receive
insertion loss is less than 0.3 dB. This performance is achievable across a ± 20% bandwidth at center frequencies ranging from 10
to 500 MHz.

ANTENNA

RFC
DCB

TRANSMITTER

02

DC SUPPLY

RECEIVER

ANTENNA

L "" Zo/2'11"fo
C = 1/2~foZo
RFC

RECEIVER

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6·34

PRINTED IN U.S.A.

PIN RADIATION DETECTORS
Features
• High Photocurrent Sensitivity
• High Reliability Construction
• Fast Rise Time
• Wide Dynamic Range
• Hardness to Neutron Bombardment
• Low Operating Voltage
Description
Silicon PIN devices are effective detectors
of nuclear and electromagnetic radiation.
This includes gamma' radiation, electrons,
and X-rays. The detectors can be used
across the temperature range of - 55°C to
+ 175°C instead of being' restricted to use at·
low temperatures.
The absorbed radiation produces electronhole pairs in the space charge region. These
charges are swept out by the applied field
and result in a current flow proportional to
the rate of absorbed radiation.
The Unitrode UM9441 series utilizes high
resistivity material and is designed to have a
uniform area mesa structure to' define the
active volume. The current 'sensitivity of

UM9441

these devices is. proportional only to the
I-region volume and is independent of temperature so long as applied voltage exceeds
the saturation voltage. This structure also
minimizes the effects of permanent damage
caused by neutrons and other high energy
radiation. Experiments on devices of the
UM9441 design show no degradation in
gamma sensitivity resulting from a total
dose of 1014 neutrons/cm 2 of 1 MeV
equivalent.

III

Package
The UM9441 is an axially leaded device
constructed by metallurgically bonding the
PIN chip in between two molybdenum refractory pins that are typically 0.125 inches in
diameter and 0.050, inches long. Hyper-pure
glass is then fused over this bond to form a
voidless seal. Leads are then brazed to ends
of molybdenum pins. This results in a highreliability package using materials so well
thermally matched that the UM9441 can
withstand temperature shock or cycling from
-196°C to + 300°C.

ABSOLUTE MAXIMUM RATINGS
Reverse Voltage ....... 100V
Photocurrent .......... 3Adc, 3A 2 s pulsed
Storage Temperature ... - 55°C to + 200°C
Operating Temperature. - 55°C to + 175°C

MECHANICAL SPECIFICATIONS"
UM9441
'\ YELLOW CATHODE BAND

02910.741DIA

\ 2 0 0 DIA. MAX
\ '~1.5081

~'"'....,

"

i

I
975
1150 I
975
:
I---MIN.~MAX+--MIN--.----l
12481

13.811

12481

Dimensions in inches (millimeters)

n nPRODUCTS
SEMICONDUCTOR
L:::::J
6·35

_UNITRDDE.

•

UM9441
Electrical Specifications (at 25°C)
Test
Photocurrent

Min

Typ

4.0

6.0

Max.

pF

Test Conditions
VA = 50V
. rads (Si)
10· sec.
2.5 MeV Flash X·Ray
Ion Physics Corp.
FX-25
F = 1 MHz, V =50V

~

VA = 50V

/AS

If = 10mA

mA

Capacitance
Reverse Current

10
1.0

Minority Carrier Lifetime

Units

2.0

TYPICAL VOLTAGE SENSITIVITY

TYPICAL PHOTOCURRENT SENSITIVITY
1000
::::: Radiation Source

As Noted

~ PIN Reverse Vollage

~

50V

rrrTTTTT"TTrrTTTrn""TTrn"T1

9.0

1-H-I+l-H+++H-H-+H+++t11-H

8.0

1+++l-t-H-t+++t++t-H-ttt-HrH
I+++l-H-I++++t+++-HH++-HrH

7.0

'+'

6.0

~

1

10.0

40

C

E
C

:;

:;

3.0

-&.

2.0

v~

~

~

~

~

&.

~

V

10.0

-H::J.,I.I~+HI++++-1+t1

:;( 5.0

":?-v

100.0

FX-25

LlNAC

HIt~+-H-tl"H"
IH-t+t-Hi-t+tt-H

AJLU D~se

Aale _ 10' _rad_s_(S_'1

II IIII II IIII II I II
Radiation Source -

sec

as noted

V

/

1.0
10'

10
10'

10'

1()8

Absorbed Dose Rate rads (Si)
sec

o

25

50

75·

100

PIN Reverse Voltage (V)

RELIABILITY
The UM9441 is consistent with Unitrode's
reputation as a manufacturer of high reliability semiconductors. Unitrode is equipped to
perform JAN type testing, base-lining and
documental conformance to a wide range of
reliability testing. This commitment to
reliability has enabled Unitrode to be a
qualified supplier of semiconductor devices
to many high-reliability programs such as:
APOLLO
MINUTEMAN
DRAGON
SPRINT
HAWK
TRIDENT
MARINER
VIKING

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6-36

PRINTED IN U.S.A.

UM9601-UM9608

PIN DIODE
For Microstrip 900MHz Antenna Switches
and Microwave Applications
Features
• Low Inductance Shunt Mount Package
• Characterized for Microstrip
• Unitrode Ruggedness and Reliability
• High Power Handling Capability
• Low Bias Current Requirement
• Excellent Distortion Properties
" Cost Effective in High Quantity Applications
Description
The UM9601-UM9608 series of PIN diodes was
developed for shunt mount applications in
microstrip circuits. Good switch performance is
demonstrated at frequencies from UHF to 4GHz
and higher. This performance is achieved using
discrete low inductance Unitrode PIN diodes
assembled with special hardware to permit good
electrical and mechanical compatibility with
microstrip transmission lines.
Design information is presented for preparation of microstrip circuit boards to accommodate
these PIN diodes. A detailed design fora900MHz
quarter-wave antenna switch is given. This
switch which employs a low cost UM9401 axial
leaded PIN diode in conjunction with a UM9601,
performs with 30dB receiver isolation over a
100MHz bandwidth and with transmitter
insertion loss of less than O.4dB. This switch can
safely handle transmitter power levels up to 100
watts at infinite antenna SWR.

The Unitrode UM9601 series PIN diodes are
constructed using a fused-in-glass process
which results in a highly reliable, hermetic
package. The process utilizes symmetrical, full
faced metallurgical bonds to both surfaces of the
silicon chip. This construction greatly minimizes
the normal parasitic inductance and capacitance
found in conventional glass or ceramic packaged
diodes which employ straps, springs or whiskers.
The use of discrete UM9601-UM9608 diodes
greatly minimizes handling problems commonly
associated with passivated PIN diode chips while
maintaining good microwave performance. In
addition the power handling capibility of the
UM9601-UM9608 series is considerably higher
than PIN diode chips can provide.
Environmentally, the UM9601-UM9608 series
PIN diodes can withstand thermal cycling from
-195°C to +300°C and exceed all military
environmental specification for shock, vibration,
acceleration, and moisture resistance.

Typical Microwave Performance
UM9601-UM9604
SPST
Insertion Loss
Frequency
o Bias

UNl9605-UM9608

SPST
Isolation
100mA

SPNT*
Isolation
100mA

SPST
Insertion Loss
o Bias

SPST
Isolation
100mA

SPNT*
Isolation
100mA

GHz

dB

dB

dB

dB

dB

dB

0.5
1.0
1.5
2.0
3.0
4.0

0.20
0.25
0.35
0.50
1.00
1.50

30
26
22
18
15
13

36
32
28
24
21
19

0.20
0.20
0.20
0.25
0.25
0.40

25
22
20
17
15
14

31
28
26
22
21
20.

-

* Performance based on SPST Measurements

nn

In 0.02S" (.63Smm) Microstrip Test Circuit.
Not.: All dimensions in inches and (millimeters).

SEMICONDUCTOR

~ PRODUCTS

6-37

_UNITRODE

UM9601-UM9608
Reverse Voltage
Ratings @ 10pA

Maximum Ratings
UM9601 - UM9604

UM9605 - UM9608

Po

8

Po

8

Flange at 25° C

7.5W

20°CIW

4W

37.5°C/W

Free Air

1.5W

-

0.5W

-

Peak Power
1pS Single Pulse
at 25°C Ambient

25KW

100V

400V

UM9601
UM9603
UM9605
UM9607

UM9602
UM9604
UM9606
UM960S

10KW

Operating and
Storage Temperature
Electrical Specifications (at 25° C)
UM9601-UM9604

UM9605-UM9608

Symbol

Min

Typ

Max

Min

Typ

Max

Units

Series
Resistance

Rs

-

0.4

0.6

-

1.5

1.7

n

1= 100mA
f = 100MHz

Parallel
Resistance

Rp

-

-

150K

-

-

n

V = 100V
f = 100MHz

Total
Capacitance

CT

-

-

1.2

-

-

0.5

pF

V = 100V
f = 1MHz

2.0

-

-

1.0

-

-

pS

IF = 10mA
IF = 100mA

Test

100K

Carrier
Lifetime

T

Forward
Voltage

VF

-

·0.S5

-

-

0.95

-

V

W

SO

-

-

150

-

-

pm

I~Region

Width

Condition

Selection Guide
The following chart serves as a general
guide for indicating the most likely diode from
the series for a given application.
Applications

Recommended Types

1. High isolation switches to 2GHzat low dc drive
2. Quarter-wave antenna switches to 100 watts.
3. Priced for high volume commercial applications.

UM9601 (Affixes to microstrip
ground plane.)
UM9603 (Affixes to microstrip
backing plate.)

High voltage rating version of UM9601 and UM9603
respectively for peak power handling to 3KW.

UM9602, UM9604

1. Low insertion loss switches to 4GHz.
2. Low distortion antenuator applications.

UM9605 (Affixes to microstrip
ground plane.)
UM9607 (Affixes to microstrip
backing plate.)

High voltage version of UM9605 and UM9607
for peak power handling to 10KW.

UM9606, UM960S

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PRINTED IN U.S.A.

UM9601-UM9608
Typical Series Resistance
vs Forward Current (F = 100MHz)

Pulse Thermal Impedance

~

w
~

100

..~

a

~ 10.

UM9605 • UM9608 . -

;I
:;
r::

1.a

~

~

w

~

~ 0.1 O·

.0

1~ .,
10

10

~

--

UM9601-UM9604

10

.,

10

.,

.,

10'

10

1.0

PULSE WIDTH (Sec)

Typical R. vs Voltage and Frequency
UM9601 - UM9604

Typical R. vs Voltage and Frequency
UM960S - UM960a

Power Rating

1~r---------r---------.---------'

10oor---------r---------.-.,-------,

2

l00MHz

a

a~

~

8

.
~

m 100

~

.!!

=

r::
~

1!

If

4

.............

10

2

rl

"'"

=

r::
~

UM96i5 • UMj;;;-

a

25

50

75

100

500MHz

.~

r-. ...........

3GHz

,oo~--------+_~~----+_------~

c

UM9601 - UM9604

"""

6

""............

125

1GHz

1!

If

3GHz

10r---------~==--_=~~~----~

~

150

175

HEAT SINK TEMPERATURE

1
1

10
VR

-

100

1000

10

Reverse Voltage (V)

Typical Forward Bias
Intermodulation Distortion
vs Nominal Carrier Frequency
at 20dBm per Channel
110

iii 100
E

ffi

a:
r::

«
u

;;:

9w

70

r::

50

./

E

ffi

./
V

./' V

a:

.-/

«
u

i5

80

;;:

9w

Second Order

40

70

'"z
a

60

a

r::

50

in
i5

40

i=

I-

oo

90

r::

i=

a

.~
~~

110

iii 100

/'

Third Order

80

60

Typical Third Order ( 2ab )
Intermodulation Distortion R ....
VB Forward Bias Current
at 20dBm per Channel

/'

90

'"az

1~

100

VII - Reverse Voltage (V)

~

b~

{!>~

~.,/

/

~.

~<:

~~....

k~"'''

IF= lOrnA

10

20

50

100

10

NOMINAL CARRIER FREQUENCY (MHz)

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20

50

100

FORWARD CURRENT (mAl

6·39

PRINTED IN U.S.A.

UM9601-UM9608
Mechanical Specifications
UM9601

UM9602

r:l~: g:f~11.047"

dn

-l

rf~r(2.29mm)
OIA.
MAX.

JJ

.0465" (1.18mm)

·0445"dl~~3mm)

UM9603

(1.19mmi REF.

.

-

~OIA'

----l ~1~mml

,

t=

.084"

I

-

t=t:

.077" (REF.)
(1.95mm)

.084" (2.13mm)

.155"

J

""" \

80

Fa-l.4MHz
Fb=7.6MHz

0

eo

1\

,.

\

\

iii
'"
~

90

~

80

"o

\

~

70

ill

,

~

z

o

\

0

I~=

lOrnA

30

~

50

~
5

40

I

Th~dordr

v=
a::
w
en

Typical Isolation ys Frequency
0.025" (0.635mm) Alumina Microstrip SPST Switch
Diode Current = 100mA

601 'iM9604

.6

~

.4

./

.2

/

25~--~~~----~------+-----~

/

V

~9605 • UM9608

20

iD

~

o
o

z

0

>=
«

FREQUENCY (GHz)

15

--'

0

~

10

Isolation ys Frequency and Diode Current
0.025" (0.635mm) Alumina Microstrip SPST Switch
28
26
24
22
20

z

18

«

16 ---:;JI'

~

Q
>--'

0

~

14 / '
12

C'

~_ _ _ ____'

o

-

in

OL-____- J_ _ _ _ _ _- L_ _ _ _ _ _

UM9601.GM9604-

./" ~605

.J.---

FREQUENCY (GHz)

llGHZ

• GM9608

./

UM9601 • GM9604

~

UM9605· UM9608

l3GHZ

10

6
10

20

50

100

200

DIODE CURRENT (mA)

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6-42

PRINTED IN U.S.A

UM9601-UM9608
Installation in Microslrip
The cup type flange on the UM9601,
UM9602, UM9605 and UM9606 is designed to
be affixed to the ground plane surface of a
microstrip board as shown. The UM9603,
UM9604, UM9607 and UM960B were designed
to be affixed to a backi ng plate as shown. It was
experimentally determined that at frequencies
greater than 2GHz the anode of the diode
should be approximately 0.010" (.254mm)
above the top surface of the microstrip for
lowest insertion loss.
UM9601/UM9602
UM9605/UM9606

I

For solder adhesion the microstrip may be
heated to solder melting temperature (up to
300 0 C) with no damage to the diode.
Conductive epoxy may also be employed. The
thermal resistance of solder mounted
UM9601-UM9604 in their test boards was less
than 200 C/W; for the UM9605-UM960B thermal
resistance was less than 30 0 C/W.

UM9603/UM9604
UM9607/UM9608

Mlcroslrlp Mount

r-- .200" Typ

Microstrlp Mount
.010" (nom)

I

(5.08mm) - - ,

Design Example - 900lVlHz Antenna Switch
An example of a practical circuit design
using a UM9601 diode is a quarter-wave
antenna switch covering the frequency of BOO900MHz. The circuit design for this switch is
shown and was constructed using 0.025"
(0.645mm) alumina microstrip.
This antenna switch uses a series mounted
diode and a shunt mounted diode. The
UM9601 was selected for the shunt mounted
device (SPST performance at 1GHz: 0.2d8
insertion loss and 25d8 isolation) and because
it is the lowest cost diode in the UM9601UM960B series. A UM9401axiai lead diode
was chosen for the series mounted device.
The performance of this switch is displayed
in the graphs and in the following table. It
should be noted that the:loss values are actual
measured numbers including losses due to the
capacitors, bias networks, connectors as well
as the board. In a typical radio application
where the antenna switch circuit board is
integrated in the same microstrip board that
contains transmitter and receiver elements the
connector loss is eliminated. This will result in
lower overall insertion loss values than
indicated here.
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The CW power handling capacity is
determined by the allowable power dissipation
of the series mounted UM9401. Using a ,::ap in
the line of 0.190" (4.B2mm) and lead soldered
attached spacing of 0.250" (0.635mm) the
power rati ng of the U M9401 is 6 watts at a 25 0 C
ambient. This was determined by performing a
thermal resistance measurement on the circuit
mounted UM9401. The relationship that
derives the maximum transmitter power, PT, is:
PT = POlss . Zo (

RS
where

0'

+ 1)

2

20'
0'

= maximum antenna SWR

Using resistance values for the UM9401 and
UM9601 the maximum transmitter power curve
is given and shows that this circuit is able to
handle 100 watts of transmitter power at
100mA forward biased and totally mismatched
antenna at an ambient temperature of 60 0 C.
For a perfectly matched antenna the power
handling increases to 400 watts under the
same bias and ambient temperature
conditions.

6·43

PRINTED IN U.S.A.

UM9601-UM9608
Distortion is an important consideration in
the selection of a PIN diode antenna switch
design. The UM9401 and UM9601 PIN diodes
are designed for low distortion applications.
The level of distortion produced by this 900MHz
antenna switch when operated in the transmit

state (forward bias of 100mA) is expected to be
at least 90dB below the carrier for a 50 watt
transmitter level. In the receiver state (zero
bias) the.intermodulation distortion caused by
two in-band signals at OdBm are estimated to
be at least 100dB below this level.

Maximum Transmitter Power
vs Forward Current for UM9601/UM9401
900MHz Mlcrostrip Antenna Switch

I I I ~~~ 50~ I I I I

5000pF

I
I
I, = 200mA

;g

'"
~
II:

w

;:

lr

POWER SUPPLY

100

I,

~

.......

~

~20m

z
«
II:

--..!!..- 10mA

....

ANT
30pF

A/4@850MHz
ZO = 800

SOmA

w

(J)

!

0'' '1-

~ml"

II:

ITI,

A/4@850MHz
Zo = 500

'\.

'\.

...........

30pF
TX....--.--t

::J
~ 10.0

x
«
:::;;

----- ""'" ""-..

.•

I----eRx

,Ir UM9601

\

:::;;

30pF

-----

f
Circuit Diagram

ct

1.0
25

50

75

100

125

150

175

AMBIENT TEMPERATURE ("C)

Antenna Switch Performance
Frequency Range
I. Transmit State
(I = 100mA, TA

800-900MHz

II. Receive State
(Zero Bias)

= 60°C)

A. Maximum Transmitter Power - 100 watts
(antenna SWR = 00)
B. Maximum Transmitter Power - 400 watts
(antenna SWR = 1)
C. Transmitter Insertion Loss - 0.4dB
D. Receiver Isolation - 31dB
E. Harmonic Distortion - -90dB
(PT = 100 watts)

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6·44

A. Receiver Insertion Loss - 0.6-0.7dB
B. Intermodulation Distortion - -100dB
Pin = OdBm

PRINTED IN U.S.A.

UM9601-UM9608

Receiver Isolation vs Frequency
and Diode Current

Antenna Switch Insertion Loss
35

1.0

100mA
SOmA
20mA ""-

:::...:

O.B

30

iii"

lOrnA

E

en

~ 0.6

iii"

...J

E

0

0

z

~

w
en

z
;::
«...J

0.4
TRANSMITTER
INSERTION LOSS
(I, = 100mA)

~

0

!!1

25

20

0.2

o

750

BOO

B50

900

950

1000

FREOUENCY (MHz)
750

800

850

900

950

1000

FREQUENCY (MHz)

Photograph of BOO-900MHz antenna switch test module using
UM9401 and UM9601 PIN Diodes. In typical transceiver
applications, the antenna switch circuit board is integrated.

UNITRODE • SEMICONDUCTOR PRODUCTS
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6-45

PRINTED IN U.S.A.

UM9601-UM9608

J3
.37S"
(9.S2mm)

--'1

104-

RX

.+

~---.

r

r
.llB~
. , . __t

D2

.093" DIA .
(2.36mm)

... +-

......,
.OOS"

C3

1.22S"
(31.11mm)

11

.020" (.51mm)

C4

-----7

.02S"
(.63Smm)

2.00"
(SO.8mm)

.400':

, (10',16mm)

.020"
(.S1mm)

.020" (.51mm)

.

J4

J1

TX

Substrate Drawing

C1

D1

C2

ANT

Assembly Drawing

Parts List

5000pF Feed through Filter

Erie 1270-016

30pF Chip Capacitor

Vitramon VJ0805A300KF

01

PIN Diode

Unitrode UM9401

02

PIN Diode

Unitrode UM9601

F1
C1-C4

J1-J3

SMA Connector

Cablewave 971-028

Substrate

Vectronics Microwave
79':9081-0401

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6-46

PRINTED IN U.S.A.

UM9701

PIN DIODE
Low Resistance, Low Distortion,
RF Switching Diode

Features
o Low Forward Resistance

• High Reverse Resistance
o Specified Low Distortion
o High Voltage Capability
o Good Power Handling
o Unitrode Ruggedness and
Reliability

Description
The UM9701 PIN diode was designed for low resistance at low forward
bias current and low reverse bias capacitance. This unique Unitrode
design results in both forward and reverse bias.
These PIN diodes are characterized for low current drain RF and
•
microwave switch applications particularly for digital filter switch _ _
designs. The construction and geometry of these devices provide good . , .
voltage and power handling capability.
These devices are constructed using a metallurgical full face bond to
both surfaces of the silicon chip. A glass enclosure houses this bond in a
reliable and hermetic package. The axial leads are attached to the refractory pins and do not touch the glass enclosure.
Environmentally these, and all Unitrode PIN diodes, can withstand
thermal cycling from -195° C to +300° C and exceed all military environmental specifications for shock, vibration, acceleration, and moisture
resistance.

Mallimum Ratings

Reverse Voltage

100V

Average Power Dissipation
Free Air at 25°C

500mW
(Derate linearly to 175°C)

Average Power Dissipation
%" (12.7 mm) T"Ota1 Lead Length
to 25°C Contacts

2.5W
(Derate linearly to 175°C)

Operating and Storage Temperature

-65° C to +175° C

Electrical Specifications
Test

Symbol

UM9701

Series Resistance (MAX)

Rs

0.80

f = 100MHz, I = 10mA

Total Capacitance (MAX)

CT

1.8pF

f = 1MHz, V = 50V

Parallel Resistance (MIN)

Rp

100kO

T

1.5ps

1= 10mA

Carrier Lifetime (MIN)

Condition

f = 100MHz, V = 50V

Reverse Current (MAX)

IR

10pA

V = 100V

Forward Voltage (MAX)

VF

0.8V

1= 10mA

Forward Bias Third Order
1M Distortion (MAX)

R

Reverse Bias Third Order
1M Distortion (MAX)

R 2ab
a

2ab

-a

-90dB

1= 10mA
Pa = Pb = +20dBm
fa = 43MHz, fb = 44MHz

-90dB

V=50V
Pa = Pb = +20dBm
fa = 43MHz, fb = 44MHz

nn

6-47

L.::::::J

SEMICCNCUCTCR
PRCCUCTS

Bili7D

UNITRODE

UM9701

Typical Series Resistance vs
Forward Current (F 100MHz)

Typical DC Characteristic

ili~111111 I I I I
I'

m 1.0

a:

-

...J
W

i=
a:
0
t-

Ul

Ci

:s
a:
w
a:a:

90

U

'"

80

g

70

w

'"0z

i=
a:

50

0

t¥

.4~
~-f
I(.,~

~~

f.3

~' 100kHz) results in smaller inductor-capacitor filter
and improved power supply response time
• High operating efficiency: Typical 2A circuit performanceRise and Fall time <75ns
Efficiency >85%
• No reverse recovery spike generated by commutating diode (See note 4. and Fig. 2.)
• Electrically isolated, 4-Pin, TO-66 hermetic case (500V, 1f'A, all leads common)
DESCRIPTION
The Unitrode ESP Switching Regulator is a unique hybrid
transistor circuit, specifically designed, constructed and specified for use in high current switching regulator applications.
The designer is thus relieved of one of the most time consuming, tedious and critical aspects of switching regulator
design: choosing the appropriate switching transistors and
commutating diode, and empirically determining the optimum
drive and bias conditions.

drawbacks to switching regulators: noise generation and slow
re$pcn$C time; there ::;, :n fuct, no dlode reverSe iecovery
spike (see note 4.).
The PIC600 series switching regulators are designed and characterized to be driven with standard integrated circuit voltage
regulators. They are completely characterized over their entire
operating range of -55'C to +125'C. The devices are enclosed
in a special4-pin TO·66 package, hermetically sealed for high
reliability. The hybrid circuit construction utilizes thick film
resistors on a beryllia substrate for maximum thermal conductivity and resultant low thermal impedance. All of the
active elements in the hybrid are fully passivated.

Switching regulators, when compared to conventional regulators, result in significant reductions in size, weight, and internal
power losses and a major decrease in overall cost. Using the
Unitrode PIC600 series, the designer can achieve further
improvements in size, weight, efficiency, and costs. At the
same time, because of the PIC600 series design and packaging,
the designer is aided in overcoming two of the most significant

SCHEMATIC

PIC600
PIC601
PIC602

pos.
INPUT

Application Notes U-68 and U-76 provide a detailed description of the hybrid circuit and design guidance for specific
circuit applications.

PIC610
PIC611
NEG. 4
PIC612
INPUT 0-.....---... r-<_ _

pas.

NEG.

-o OUTPUT

~--~~ OUTPUT

2
COMMON

COMMON

MECHANICAL SPECIFICATIONS
PIC600 PIC601 PIC602 PIC610 PIC611 PIC612

NOTES:
1. Case is electrically isolated.
2. Loads may be soldered to within
1/16" of base provided temperaturetime exposure is less than 260°C
for 10 seconds.

B
'''II- C

~

Ir .
A·

--

J[]K

Ins.

4-Pin T0-66

mm

A

.&lOMAX.

15.75 MAX.

B

.050-.075

1.27-1.91

C

.028-.034

0.11-0.86

D

.958-.962

24.33-24.43

E

.190-.210

4.83-5.33

F

.190-.210

4.83-5.33

G

.350 MAX. RAO. 8.89 MAX. RAD.

H

.570-.590

1448·14.99

J

.142_.1520IA

3.61-3.B60IA.

K

.360 MIN.

9.14 MIN .

L

.250-.340

6.35-8.64

OUTPUT(I)

nn

SEMICONDUCTOR

~ PRODUCTS

8/78

7-4

_UNITRDDE

PIC600 PIC601 PIC602 PIC6l0 PIC611 PIC6l2
ABSOLUTE MAXIMUM RATINGS
PIC600

PIC601

PIC602

PIC610

PIC611

PIC612

Input Voltage, V•• , ............................................................ 60V .................... SOV.................. 100V................ -60V................ -SOV .............. -lOOV
Output Voltage, V,., ........................................................ 60V .................... SOV.................. 100V................ -60V................ -SOV .............. -lOOV
Drive-Input Reverse Voltage, V3 ••...........••.•...•.•.•......•.•.• 5V ...................... 5V...................... 5V.................. -5V.................. -5V.................. -5V
Output Current, I, ............................................................... 5A ...................... 5A...................... 5A .................. -5A .................. -5A .................. -SA
Drive Current, 13 .......................................................... -0.2A ................ -0.2A ............... -0.2A .................... 0.2A ................... 0.2A.................... 0.2A
Thermal Resistance
Junction to Case, 9 J• c
Power Switch .
Commutating Diode

........ 4.0·C/W .
60.0·C/W ..
. .. -SS·C to +12S·C ..
..... +150·C.

Case to Ambient, 9 C ' A ...
Operating Temperature Range, Tc .
Maximum Junction Temperature, Tj
Storage Temperature Range

... -6S·C to +lSO·C.

III

ELECTRICAL SPECIFICATIONS (at 25·C unless noted)
PICGOO, 601, 602

Test
Current Delay Time

Symbol
tdi

Current Rise Time

tri

Voltage Rise Time
Voltage Storage Time
Voltage Fall Time

t"
t"

Current Fall Time
Efficiency (Notes 2. & 4.)
On·State Voltage (Note 3.)

t"
tfi
~

V" 'tonl

On·State Voltage (Note 3.)

V4_1Ion}

Diode Forward Voltage (Note 3.)
Diode Forward Voltage (Note 3.)

V2_'(onl
V2_I(Onl

'.. ,

Off-State Current
Off·State Current

I •. ,

Diode Reverse Current

',.,

Diode Reverse Current

',-,

Min.

-

Typ.

Max.

20
SO

40

-

30

-

75
50

700

-

-

SO

-

70

7S
ISO

-

85
1.0

-

2.5

-

1.0

1.0
1.S

-

0.1

10

-

10

-

1.0

-

SOO

-

.8

1.5
3.5

PIC610, 6U, 612
Min.

-

-

Typ.

Max,

Units

20
50

40

ns

7S
50

ns
ns

700

-

ns

SO

7S

ns

See Figure 2.

70
8S

ISO

ns

See notes 1., 2., 4.

-

%

30

-

-1.0 -1.5
-2.S -3.5
-.8 -1.0
-1.0 -1.5
-0.1 -10

-

-10

10

-

-

-

-1.0 -10
500

-

Conditions

= 2SV(-2SV)
= SV(-5V)
loci = 2AC-2A)
I, = -20mA(20mA) NOTE 5

-

V
V
V
V
pA
pA
pA
pA

Vic
Vocl

= 2A(-2A), I, =-.02A(.02A) NOTE 5
= 5A(-5A), I, =:' -.02A(.02A) NOTE 5
I, = 2AC-2A)
I, = SAC-SA)
V. = Rated input voltage
V. = Rated input voltage, T = 100·C
V, = Rated output voltage
V, = Rated output voltage, T = 100·C
I.

I.

A

A

NOTES:

1. In switching an inductive load, the current will lead the voltage on turn on and lag the voltage on turn·off (see Figure 2.). Therefore, Voltage Delay
Time (tov) '" tdi + tn and Current Storage Time (tsi) '" Isv + tlv.
2. The efficiency is a measure of internal power losses and is equal to Output Power divided by Input Power. The switching speed circuit of Figure I., in
which the efficiency is measured, is representative of typical operating conditions for the PIC600 switching regulators.
3. Pulse test: Duration = 300ps, Duty CycleS 2%.
4. As can be seen from the switching waveforms shown in Figure 2., no reverse of forward recovery spike is generated by the commutating diode during
switching! This reduces self-generated noise. since no current spike is fed through the switching regulator. It also improves efficiency and reliabilty,
since the power switch only carries current during turn-on.
5. To insure safe operation 13 should be 2: 120mAI during TON. Operation at 13 < 120mAI can permanently damage device.

POWER DISSIPATION CONSIDERATIONS
The tolal power losses in the switching regulator is the sum olthe switching losses, and the powerswitchanddiode D.C. losses. Once total power dissipation has
been determined, the Power Dissipation curve, or thermal resistance data may be used to determine the allowable case or ambient temperature for any
operating condition.
The switching losses curve presents data for a frequency of 20KHz. To find losses at any other frequency, multiply by 1120KHz.
The D.C. losses curve presents data fora duty cycle of .2. To find D.C. losses at any other duty cycle, multiply by 0/.2 forthe power switch and by(1·D)/.8 forthe
diode.
At frequencies much below 10KHz the above method for determining the allowable case or ambient temperature becomes invalid and a detailed transient
thermal analysis must be performed. Please see Design Note 6 (DN·6) for further information.'

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7·5

PRINTED IN U.S.A.

PIC600 PIC601 PIC602 PIC610 PIC611 PIC612

Power Dissipation

Efficiency
100 r-,-,-,-rT-------.f~_~2~0"-kuH~z,'V'c-o,~-~2~0~V

40

~

z
;::
«
0..

iii

VI

90
80
30

"'0~

20

"«"'a:

IS

0..

"'>
«

1"'-

I
0

0..

o
·50

!

!

!

-25

0

25

T, -

I
50

70f-++++-:t-----t---t--t-"'j

~

60

f-++++t-----t----t--t--j

~

"

"

75

100

125

50

~
"'

f-++++f-----f---+--+--I

40

f-++++-:t-----t---t--t--j

>::'"

30

As measured in circuit shown in

Figure 1.

=

10

,

o

150

I]
20m A
Tc:;:: 25°C
I

_5

I

I

I

!

I, -

10
Duty Cycle

/'
MAXIMUM ~

~

3
U
ci

~

~V

.2

1
I
,;:::; :;:::::P l ..Power
Switch Duty Cycle =
- -e- Diode Duty Cycle = 0.8

.1

- -e-

.OS

- -e-

.02
.01
.S

~

"'
0

-

T, = 2S'C
Ta obtain diode losses at any
other duty cycle, multiply by
(1-0)/.8 where 0 =-_ Power SwitchID[,Y Cycle.
I
I
J

IM~xiMG~/

...J

.2

U
ci

.1

...-

"'

.1

.02
.01

.6 .7 .8.9 1
I, - OUTPUT CURRENT (A)

.S

Maximum Safe Operating Area

Von = 25V, I) :::: 20m A
f = 20kHz
--+--+.....,,4--J
SO

Power

...~

Swjtch-::;"...."'---=".r~

f-:::o....-F+-:bI--""'::....---+--+--+--:J

.02 To determine switching losses at -+....."q_-j
:r
any other frequency, multiply by
~ .01 f/20kHz where f is the frequenc;'YL-j_-:;I"'--j

...u
...:::>

3

.6 .7 .8.9 1
2
3
I, - OUTPUT CURRENT (A)

PIC 600, 601, 602·610, 611, 612

t5
0:

.05

/TYPICAL

1-----

.OS

MAXIMUMVI
VI

~
//

//

I I II

.S

VI
VI

T, = 2S'C
.2 I-r-H-I-+------j,.L.-y"--l--I
VI

20mA

Cycle.

Switching Losses

.5

:::

To obtain the Power Switch
losses at any other duty cycle,
multiply by 0/.2 where 0 := Duty

VI

0.2

= .2, I J

Tc::: 25°C

~ TYPICAL
.5

VI
VI

OUTPUT CURRENT (A)

Power Switch D.C. Losses

Diode D.C. Losses

"'

!

.6 .7.8.9 1

CASE TEMPERATURE ('C)

10

VI

+-:-+-:-t

V ,n = 25V
V out = V ,n X (Duty Cycle)

20

,

I

= SOkHz, V"', = SV ____ ............

~

z

\
Maximum allowable average
power dissipation each, for the
power switch and for the diode.
Maximum allowable case
temperature ::--: 125°C

10

-...::...

f

'\

2S

Ci
a:

~tttS~~~;;f~I:2:0=kH;Z~'i
I.v~,:T~5:Vj
~

35

0

20

/iOOJ,tS 10% duty cycle
lOpS 10% duty cycle

10

0:

:::>

~

~ .005 ::;:~~i~!:~

"'

losses are to be

1
.002

f-+-:+::J,.1"'1----=7"''-+

DC
Tc = 100°C

"

.........
.................. i"\.

0.5

,

0.2

.001 '--'--'-..LL-''''-_ _ _- '_ _- ' - _ - ' - _ - '
. S .6 .7.8:9 1
I, - OUTPUT CURRENT (A)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924-1235

-

o

,/

O. 1

3 4 5

10

20

304050

PIC 600. 610
PIC 601, 611
PIC 602, 612

100

V•• ,(ON) ON·STATE VOLTAGE

7·6

PRINTED IN U.S.A.

PIC600 PIC601 PIC602 PIC610 PIC611 PIC612

,..L-I'IrYYVL_ _ _

IDRIVE

=

----I-

-20mA

Pulse Width = lOttS
Rep. Rale = 20kHz

I - - -..........~---

Figure 2. PIC600, PIC601, PIC6D2 Switching Waveforms

Figure 1. PIC600, 601,602 Switching Speed Circuit

Nole: PIC610, PIC611, PIC612 Test Circuit and waveforms are identical but of opposite polarity (V,.=-25V, V••,=-SV, I.RI .. = +20mA).

On·State Characteristics

Diode Forward Characteristics

g

g

I-

I-

UJ

'"'"

Z

OJ

u

o

u

'"
:r'"


'"'"
:>

/

I
I/

Z

~s ~e~sJrJd in circuit 5h~wn in

500 I- Figure 1.
400 f- Vi.
25V
SV
300 I- Voul
I]
20mA
200 f- Tj
25'C

1000

-

I--

500
400

-

I-I--

300

- r--

=
=
=
=

~e~sJreld in circuit Sh~wn in

1s
Figure 1.
V" = 25V

I

-

Vo • 1 = SV
I] = 20m A
T; = 25°C

E 200
UJ

::;;

;::

UJ

::;; 100

;::

I
50
40
30

I"

......

I"

-----

tp;

20

V

:j

V

100

...

:-

100kHz) results in smaller inductor·capacitor filter
and improved power supply response time
• High operating efficiency: Typical 7A circuit performanceRise and Fall time <300 ns
Efficiency >85%
• No reverse recoverY spike generated by commutating diode (See note 4. and Fig. 2.)
• Electrically isolated, 4·Pin, T066 hermetic case (500V, l"A, all leads common)
DESCRIPTION
;iJe Uniirode ESP Switching Regulator is a unique hybrid
transistor circuit, specifically designed, constructed and
specified for use in high current switching regulator applications. The designer is thus relieved of one of the most time
consuming, tedious and critical aspects of switching regulator
design: choosing the appropriate switching transistors and
commutating diode, and empirically determining the optimum
drive and bias conditions.

significant rfr:lwb~cks to switching !"egu!atQ!"s: noise generation
and slow response time; there is, in fact, no diode reverse
recovery spike (See note 4.).
The PIC600 series switching regulators are designed and
characterized to be driven wih standard integrated circuit
voltage regulators. They are completely characterized over
their entire operating range of -55"C to +125"C. The devices
are enclosed in a special4-pin T066 package, hermetically
sealed for high reliability. The hybrid circuit construction
utilizes thick film resistors on a berYllia substrate for maximum
thermal conductivity and resultant low thermal impedance. All
of the active elements in the hybrid are fully passivated.

Switching regulators, when compared to conventional regulators, result in significant reductions in size, weight, and
internal power losses and a major decrease in overall cost.
Using the Unitrode PIC600 series the designer can achieve
further improvements in size, weight, efficiency, and costs. At
the same time, because of the PIC600 series design and
packaging, the designer is aided in overcoming two of the most

SCHEMATIC

PIC625
PIC626
PIC627
POS.
INPUT

Application NotesU-68 and U-76 provide a detailed description of the hybrid circuit and design guidance for specific
circuit applications.

,---~~-O

NEG. 4
INPUT

POS.
OUTPUT

PIC635
PIC636
PIC637

0--.------.. r-'r-..--o

2
COMMON

DRIVE

NEG.
OUTPUT

COMMON

MECHANICAL SPECIFICATIONS
PIC625 PIC626 PIC627 PIC635 PIC636 PIC637

NOTES:

4-Pin TO-66

1. Case is electrically isolated.
2. loads may be soldered to within
1116" of base provided temperature·
time exposure is less than 260°C
for 10 seconds.

-t
B
II-

Ir

c

mm

.620 MAX

15.75 MAX.

050-.075

1.27-191

C

.028-03'

0.71-086

0

958-.962

2433-24.43

E

190-.210

F

./..

IDK

ins.
A

e

190- 210

G

.350 MAX. RAO

H

570-590

4.83-5.33
6.89 MAX RAO

J

142-.152 DIA

3S1-3S6DIA

l

250-.340

635-8.54

OUTPUT(l)

nn

SEMICONDUCTOR

~ PRODUCTS

8/78

7-8

_UNITRODE

PIC625 PIC626 PIC627 PIC635 PIC636 PIC637
ABSOLUTE MAXIMUM RATINGS
PIC625

PIC626

PIC627

PIC635

PIC636

PIC637

Input Voltage, V4., .................
........... 60V ................... SOV.................. 100V ................ -60V ................ -SOV.............. -100V
............ 60V .................... SOV.................. lOOV................ -60V ................ -SOV .............. -100V
Output Voltage, V,., ....................................
............... 5V...................... 5V...................... 5V.................. -5V.................. -5V .................. -SA
Drive·lnput Reverse Voltage, V'.4 ........
Output Current, I, ........................................................... 15A .................... 15A.................... 15A ................ -15A ................ -15A ................ -15A
Drive Current, I, ......................................................... -0.4A ................ -OAA. ............... -OAA. ................... 0.4A ................... 0.4A .................... 0.4A
Thermal Resistance
Junction to Case, e J.e
..... 4.0'C/W.
Power Switch .
....... 4.0'C/W..
Commutating Diode
.60.0'C/W...
Case to Ambient, ee'A"
... -55'C to +125'C.
Operating Temperature Range, Te .
.+150'C ...
Maximum Junction Temperature, Tj
... -65'C to +150'C.
Storage Temperature Range .
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test
Current Delay Time
Current Rise Time
Voltage Rise Time
Voltage Storage Time
Voltage Fall Time
Current Fall Time
Efficiency (Notes 2 and 4)
On·State Voltage (Note 3)
On·State Voltage (Note 3)
Diode FWd. Voltage (Note 3)
Diode Fwd. Voltage (Note 3)
Off·State Current
Off·State Current
Diode Reverse Current
Diode Reverse Current

Symbol
tdi
tri

t"
t"
t f,
tf,

v
V.... '{o'l
V,., {o'l
V2_ I {on)
V,., {o,l
I,.,
I,.,
I,.,
I,.,

PIC6tS/626/627
Min. Typ. Max.

-

35
65
40
900
70
175
S5
1.0
2.5
.85
.95
0.1
10
1.0
500

PIC63S/636/637
Min. Typ.
Max~

60
150
60

-

-

-

175
300

-

-

-

-

-

1.5
3.5
1.25
1.75
10

-

10

-

-

-

-

-

35
60
65
175
40
60
900
100
300
300
175
85
-1.0 -1.5
-2.5 -3.5
-.85 -1.25
-.95 -1.75
-0.1 -10
-10
-1.0 -10
500
-

-

-

Units

ns
ns
ns
ns
ns
ns

Conditions

= 25V(-25V)
= 5V(-5V)
= 7AC-7Al
= -30mA(30mA) NOTE 5

Vi,
Vo"
1o"
I,
See
See

%
V
V
V
V
"A
"A
I'A
"A

I,
I,
I,
I,
V.
V,
V,
V,

Figure 2
notes 1, 2, 4

= 7AC-7Al, I, = -.03A(.03A) NOTE 5
= 15AC-15AJ, I, = -.03A(.03A) NOTE 5
= 7AC-7Al
=15AC-15AJ
= Rated input voltage
= Rated input voltage, TA=100'C
= Rated output voltage
= Rated output voltage, TA =100'C

NOTES:
1. In switching an inductive load. the current will lead the voltage on turn·on and lag the voltage on turn·off (see Figure 2). Therefore; Voltage Delay Time
(tov) '" Ici, + t" and Current Storage Time (Is,) '" Isv + tfv.
2. The efficiency is a measure of internal power losses and is equal to Output Power divided by {nput Power. The switching speed circuit of Figure 1, in
which the efficiency is measured, is representative of typical operating conditions for the PIC600 series switching regulators.
3. Pulse test: Duration = 300,,", Duty Cycle'; 2%.
4. As can be seen from the switching waveforms shown in Figure 2, no reverse of forward recovery spike is generated by the commutating diode during
switching! This reduces self'generated noise, since no current spike is fed through the switching regulator. It also improves efficiency and reliability,
since the power switch only carries current during turn-on.

5. To insure safe operation 13 should be 2: 130mAI during TON. Operation at 13

< 130mAI can permanently damage device.

POWER DISSIPATION CONSIOERATIONS

The total power losses in the switching regulator is the sum of the switching losses, and the power switch and diode D.C. losses. Once total power dissipation has
been determined, the Power Dissipation curve, or thermal resistance data may be used to determine the allowable case or ambient temperature for any
operating condition.
The switching losses curve presents data for a frequency of 20KHz. To find losses at any other frequency, multiply by fl20KHz.
The D.C. losses curve presents data for a duty cycle of .2. To find D.C. losses at any other duty cycle, multiply by 0/.2 for the powerswitchand by(1·D)/.8 for the
diode.
At frequencies much below 10KHz the above method for determining the allowable case or ambient temperature becomes invalid and a detailed transient
thermal analysis must be performed. Please see Design Note 6 (DN·6) for further information.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEl. (617) 926·0404 • FAX (617) 924·1235

7·9

PRINTED IN U.S.A.

•

PIC625 PIC626 PIC627 PIC635 PIC636 PIC637

Power Dissipation

Efficiency

100~_~
J.-f

40

~

z
0
;:

'""-

20KHz, V."

35

90
80

30

'\

iii
'" 25
C
0:
W

;:

'" '"

20

0

"-

w IS

''""
>
'"I
0:
W

o

-50 -25

~

60 1-+~-HH-+--1I-I--H-+--+--I

'"u

SOI--~~~~~-r-~-t~-~I----1

t:;

40I--+--1I-I--H-+-I-I--H-+---+--I

~

30

As measured in the circuit shown --1-----1
in Figure 1.

20

V," =25V
VDut = Vi" X Duty Cycle
I, = 30mA
T, 25·C

;;:

r\.

'\

10

=

OL-~~~~~~~~~-'-

ISO

25
50
75
100 125
Tc - CASE TEMPERATURE (OC)

Power Switch Duty Cycle
Diode Duty Cycle
0.8

50

T,

10

Switch Duty Cycle.

I

(1-0)/.8 where 0 = Power

~

'"w

'"'"0
Q

~

'"w
'"'"
9

1/

..J

U

20

V I----i--"
1.0

0.2, ')

10

L
MAXIMUM

2

TYPICAL

V ~V'



u

:::>

Diode

MAXIMUM

%

1)11 M

.02
•01
2

Tr~ICAL -

f

...... .....

DC
Tc = l00·C

t-- ,

~

I-

I-- -

[/,3001'5 10% duty cycle
101'5 10% duty cycle

10

I-

.10
.05

g
~0:

o

1

j

0.5

....... l'
PIC 625. 635
PIC 626, 636
PIC 627, 637

0.2
iode

45678910
I, - OUTPUT CURRENT (A)

V

O. 1
3

20

4 5

V.-l(ON}

10

20

30 4050

100

ON-STATE VOLTAGE

To determine switching losses at any other
frequency. multiply by f/20KHz where f is the
frequency at which the losses are to be

determined-,

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926.()4()4 • FAX (617) 924-1235

7-10

PRINTED IN U.S.A.

PIC625 PIC626 PIC627 PIC635 PIC636 PIC637
I~

-

...

- V,_ •

= '2SV -------''V\/V--'-,

V.

.J'<'VYVL~

________ 1

v, ,

.10.

POWER SWITCH

V",t

!

= sv
Ir'~I~l·

-30mA

Pulse Width.= lOllS
Rep. Rate = 20kHz

1---_ _4---------'

---------

r·· .. ;·")···......····..···....·······..····..···..······ ",

f

I

!

On-State Characteristics

16

TYPICAL /
12

:>

10

'"

~
z
>-

/v

14

0

/

~

VI

V

Z

0

1/

I
-"

= -25V, Vout = -5V,

IDRIVE

= +30mA.)

•

'"

18
16

0:
0:

14

0

12

/

:>

I/MAXIMUM

/ /

'"
0:

«

~

/

10

I
/
/ V
II /

...
'"'"
0

T; = 2S'C
1,=30mA- f--

'"I

0

I&V
.S
V,_,(on) -

1.5
2.S
DIODE FORWARD VOLTAGE (V)

Turn-on Time

FaUTime
1000

As measured in the circuit shown
in Figure 1.
V"

SOO
400
300

V out

Ii
T;

T; = 2S'C

I

-"

V'_,(on)- ON-STATE VOLTAGE (V)

1000

MAXIMUM

TYPICAL

0:

I.
/1

2

As measured in the circuit shown

in Figure 1.

2SV

Vi"

500
400

5V
30mA

V~t

I,
T;

300

25'C

.

W 200

E.

'":0;::

\

20

18

0:
0:

\

Diode Forward Characteristics

20

'"

COMMUTATING DIODE

Figure 2. PIC625, 626, 627 Switching Waveforms

Figure 1. PIC625, 626, 627 Switching Speed Circuit

Note: PIC635, PIC636, PIC637 Circuit and waveforms are identical but of opposite polarity (V in

~
z>-

!

T.,.,=lOI-lS
- Te•• ,:::::: 40ps
Note: No Diode Reverse or Forward Recovery Spike (See note 4.)

25V
5V
30mA
25'C

200

E.

.I

'";::

100

:0 100

I

,
tn

t"

--

~

I
SO
40

50
40

30

30

20

20

10

10
2

34
S678910
I, - OUTPUT CURRENT (A)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

20

2
I, -

7-11

45678910
OUTPUT CURRENT (A)

20

PRINTED IN U.S.A.

PIC645·
PIC646
PIC647
PIC655
PIC656
PIC657

POWER INTEGRATED CIRCUIT
Switching .Regulator 15 Amp Positive and Negative
Power Output Stages
.
FEATURES
• Designed and characterized for switching regulator applications
• Cost saving design reduces size, improves efficiency, reduces noise and RFI (See note 4.)
• High operating frequency (to >lOOkHz) results in smaller inductor-capacitor filter
and improved power supply response time'
• High operating efficiency: Typical 7A circuit performanceRise and Fall time <300 ns
Efficiency >S5%
• No reverse recovery spike generated by commutating diode (See note 4. and Fig. 2.)

DESCRIPTION
The Unitrooe ESP Switching Regulator is a unique hybrid
transistor circuit, specifically designed, constructed and
specified for use in high current switching regulator applications. The designer is thus relieved of one of the most time
consuming; tedious and critical aspects of switching regulator
design: choosing the appropriate switching transistors and
commutating diode, and empirically determining the optimum
drive and bias conditions.

!;ignific~nt drawbarks to.switching regu!ato!"s: noise generation
and slow response time; there is, in fact, no diode reverse
recovery spike (See note 4.).

The PIC600 series switching regulators are designed and
characterized to be driven with standard integrated circuit
voltage regulators. They are completely characterized over
their entire operating range of -55·C·to +125·C. The devices
are enclosed in a special 3 pin TO-3 package, hermetically
sealed for high reliability. The hybrid circuit construction
utilizes thick film resistors on a beryllia substrate for maximum
thermal conductivity and resultant low thermal impedance. All
of the active elements in the hybrid are fully passivated.

Switching regulators, when compared to conventional regulators, result in significant reductions in size, weight, and
internal power losses and a major decrease in overall cost.
Using the Unitrode PIC600 series the designer can achieve
further improvements in size, weight, efficiency, and costs. At
the same time, because of the PIC600 series design and
packllging, the designer is aided in overcoming two of the most

SCHEMATIC

PIC645
. PIC646
PIC647

pas.

Application Notes U.GS and U-76 provide a detailed description of the hybrid circuit and design guidance for specific
circuit applications.

pas.

NEG. 4
0--...---"

OUTPUT

INPUT

PIC655
PIC656
PIC657

INPUT

2
. COMMON

NEG.

;-<,...-..---0

DRIVE

OUTPUT

COMMON

MECHANICAL SPECIFICATIONS
PIC645 PIC646 PIC647 PIC655 PIC656 PIC657

IC~

B-1

A

2

[~

4

B

1

C
D
E

3

G
H

J
NOTE:

loads may be soldered to within
1116" of base provj~ed temperaturetime exposure is less than 260°C
for 10 seconds.

M
N

ins.

mm

.875 MAX.
.135
.250 .450
.312 MIN.
.205-.225
.420-.440
.145-.165
.395-.405
.151-.161 DIA.
.188 MAX. RAD.
.525 MAX. RAD.
.708-.728
1.177-1.197
.038-.043 DIA.

22.23 MAX.
3.43
6.35-11.43
7.92 MIN.
5.21 5.72
lQ.67-11.18
3.68-4.19
10.03-lQ,29
3.84-4.09 DIA.·
4.78 MAX. RAD .
13.34 MAX. RAD .
17.98 18.49
29.90-30.40
.97-1.09 DIA.

3 Pin TO-3

nn

SEMICONDUCTOR

~ PRODUCTS

8/78

7-12

_UNITRDDE

PIC645 PIC646 PIC647 PIC655 PIC656 PIC657
ABSOLUTE MAXIMUM RATINGS
PIC645

PIC646

PIC647

Ple655

PIC656

PIC657

Input Voltage, V•., ............................................................ 60V .................... BOV.................. 100V................ -60V................ -BOV.............. -IOOV
Output Voltage, V,., ........................................................ 60V .................... BOV.................. 100V................ -60V................ -BOV .............. -IOOV
Drive-Input Reverse Voltage, V] .................................... 5V ...................... 5V...................... 5V.................. -5V.................. -5V.................. -5V
Continuous Output Current, I, .................................... l5A .................... l5A.................... l5A ................ -15A................ -15A ................ -15A
Peak Output Current ....................................................... 20A .................... 20A .................... 20A................ -20A................ -20A ................ -20A
Drive Current, I] ............................................................ -0.4A ................ -0.4A ............... -0.4A.................... 0.4A ................... 0.4A.................... 0.4A
Thermal Resistance
Junction to Case, 0J.e
Power Switch .

2'C/W
2'C/W.
30.0'C/W ...
-55'C to +125'C
... +150'C.
-WC to +150'C .

Commutating Diode
Case to Ambient, 8 e ' A
Operating Temperature Range, Te .
Maximum Junction Temperature, Tj
Storage Temperature Range

•

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test
Current Delay Time

Current Rise Time
Voltage Rise Time
Voltage Storage Time
Voltage Fall Time
Current Fall Time
Efficiency (Notes 2 and 4)
On·State Voltage (Note 3)
On·State Voltage (Note 3)
Diode Fwd. Voltage (Note 3)
D!ode Fwd. Voltage (Note 3)
Off·State Current
Off·State Current
Diode Reverse Current
Diode Reverse Current

Symbol

td;
tri

t"
t"
t r,
tn

PIC645/646/647
Min. Typ. Max.

-

65

60
150

40

60

-

900

-

-

70
175

175
300

B5

-

1.0

1.5
3.5

v

-

V,. 110"1

-

V,. I10"1
V2_ I(on)
V,. I10"1
I,.,
14-1
I,.,
1,-,

35

-

2.5

-

.95
0.1
10

-

.B5

1.25
1.75
10

-

1.0

10

500

-

PI C655/656/657
Min. Typ.
Max.

-

35

60

65
40

175
60

Units

yO"' =: 5V(-5V)
10"' =: 7A(-7AJ
I] =: -30mA(30mA) NOTE 5

See Figure 2

900

-

ns
ns

100
175

300
300

ns
ns

B5

-

%

-1.0
-2.5

-1.5
-3.5·

-.B5 -1.25
-.95 -1.75
-0.1 -10

V
V
V
V

-10
-1.0

-10

/LA
/LA
/LA

500

-

/LA

-

Conditillns

ns
ns

Vi" =: 25V( -25V)

See mites 1, 2, 4
I, =: 7A(-7AJ, I, =: -.03A(.03A) NOTE 5
I, =: 15A(-15AJ, I] =: -.03A(.03A) NOTE 5
I, =: 7A(-7A)
I, =: 15A(-15AJ
V, =: Rated input voltage
V, =: Rated input voltage, TA =: 100'C
VI =: Rated output voltage
VI =: Rated output voltage, TA =: 100'C

NOTES:

1. In switching an inductive load, the current will iead the voltage on turn·on and lag the voltage on turn·off (see Figure 2). Therefore, Voltage Delay Time
(tov)
+ tri and Current Storage Time (isO '"Isy + tfy.
.
.

"'lei,

2. The efficiency is a measure of internal power losses and is equal to Output Power divided by Input Power. The switching speed circuit of Figure 1, in
which the efficiency is measured, is representative of typical operating conditions for the PIC600 series switching regulators.
3. Pulse test: Duration = 3001'5, Duty Cycle $ 2%.
4. As can be seen from the switching waveforms shown in Figure 2, no reverse of forward recovery spike is generated by the commutating diode during
switching! This reduces self·generated noise, since no current spike is fed through the switching regulator. It also improves efficiency and reliability,
since the power switch only carries current during turn-on.

5. To insure safe operation 13 should be 2: 130mAI during TON. Operation at 13

< 130mAI can

permanently damage device.

POWER DISSIPATION CONSIDERATIONS
The total power losses in the switching regulator is the sum of the switching losses, and the powerswitch and diode D.C. losses.. Once total power dissipation has
been determined, the Power Dissipation curve, or thermal resistance data may be used to determine the allowable case or ambient temperature for any
operating condition.
The switching losses curve presents data for a frequency of 20KHz. To find losses at any other frequency, multiply by f120KHz.
The D.C. losses curve presents data for a duty cycle of .2. To find D.C. losses at any other duty cycle, multiply by 0/.2 forthe power switch and by(1·0)/.8 forthe
d~~
.
At frequencies much below 10KHz the above method for determining the allowable case or ambient temperature becomes invalid and a detailed transient
thermal analysis must be performed. Please see Design Note 6 (ON·6) for further information.

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7-13

PRINTED IN U.S.A.

PIC645 PIC646 PIC647 PIC655 PIC656 PIC657

Efficiency

Power Dissipation
100

80

~

z

.-1

90

70

80

0

;::

60.

in
0

50

iI:
II)

0:

UJ

'\

40

:;:

f

~

1,\

30

UJ

'"

«
0:
>
«
I

10

0.0

UJ

C3
i>:

50

40

r::-

30

I\.

'\

As measured in the circuit shown ---t---j
in Figure 1.
V;"
2SV
VOu! :;::: V,,, X Duty Cycle
I, = 30mA
T,
2s'C

=

20
10

=

4

CASE TEMPERATURE ('C)

I -

Diode D.C. Losses
100
50

Power Switch Duty Cycle
Diode Duty Cycle
0.8
2S'C
T,

10

~

other duty cycle, multiply by
(1-0)/.8 where D =: Power
Switch Duty Cycle.

I

-MAXIMUM

II)
II)

0

V

c.i
0

1.0

20

0/.2, where 0 is the duty cycle.

To obtain power switch losses at

TYPICAL-

~

r--:-=

10

UJ
II)
II)

./
MAXIMUM

0

..J

...-:: :..-- I--'"

c.i

V

0

.5

.5

•2

.2

.10
I, -

30mA

0.2, I)

II)

,/

..J

50

Duty Cycle
2S'C
T,

any other duty cycle, multiply b y - - -

II)

UJ

20

15

:)b/B910

OUTPUT CURRENT (A)

Power Switch D.C. Losses
100

0.2

To obtain diode losses at any
20

5V

60

-50
Tc -

20KHz,VO " '

= sV~

70

"UJ

'\

Maximum allowable average
power dissipation each, for the
power switch and for the diode.
Maximum allowable case
temperature = 125°C

20

UJ

1
sOKHz,Vo _'

Z

'"

0

0.

>
u

=

- -

.....

.1

20

5 6 7 8 9 10
OUTPUT CURRENT (A)

TYPICAL

-:::::V

5678910
I, -

20

OUTPUT CURRENT (A)

Maximum Safe Operating Area
PIC 645. 646. 647-655. 656, 657

Switching Losses
10

50

/"

~
II)

MAXIMUM -

Power Switch

~

1.0

......./

20

UJ
II)
II)

g

'"
:;:

Z

u

I-

§:
II)

~

.5
TYPICAL
.2

V
i-"""

:::J

r----...
-

U
l-

----

/

......

fg~~ IA~d~~tyC~~~e

ii'

DC

Tc = 100G e

I:::J

............

o

r-- -

MAXIMUM

1

Diode

11%

...H1 J-14 Tr~'CAL

.02
.01

2
I, V,I'I = 25V, I)
1
20KHz
Tc =2S'C

=

Power Switch

.10
.05

10

0:
0:

=

30mA.

5678910
OUTPUT CURRENT (A)

~

0.5
PIC 645 655
PIC 646, 656
PIC 647, 657

0.2
-

piOde

0.1

3

20

4 5

V.-,(ON)

10

20

304050

100

ON·STATE VOLTAGE

To determine switching losses at any other
frequency. multiply by 1120KHz where f is the
frequency at which the losses are to be
determined.

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PRINTED IN U.S.A.

PIC645 PIC646 PIC647 PIC655 PIC656 PIC657

v

=

'--.,----, - - - +

12SV --UVI/\rL-----L,

+
IDRIYl == -30mA
Pulse Width.= lO,us
Rep. Rate = 20kHz

RL =
.71SP.

;
Ton=10.us

'-J

-To'l::: 40P.5

Note: No Oiode Reverse or Forward Recovery Spike (See note 4.)

'.

t---->-----'----

(....;.)1................................................ ".

f

+2SV --, r - l r - l ~

_ OvU

;

POWER SWITCH

Voul

= SV

'

!

LJ

Figure 1. PIC645, 646, 647 Switching Speed Circuit

COMMUTATING DIODE

\

\

Figure 2. PIC645, 646, 647 Switching Waveforms

Note: PIC655, PIC656, PIC657 Circuit and waveforms are identical but of opposite polarity (V in = -2SV, VolIl = -SV, JDRlVE = +30mA.)

On·State Characteristics
20

18

:!

16

I-

14

Z

"'0:0:

:!

!
./
TYPICAL

12

::>

"
"'«

10

I-

I/)

II

Z

0

V

...z

V

18
16

0:
0:

14

"

12

«
;:

10

/

::>

I/MAXIMUM

0

0:

/ /

TYPICAL

1

0

1

V

I

j

-"

~V

III

.5
V'.'(on) -

V,.,{on) -

ON·STATE VOLTAGE (V)

1.5

Fall Time
1000

As measured in the circuit shown
in Figure 1.
Y,n
25V
Vo .!
SV
']
30mA
Ti
25'C

500
400
300

As measured in the circuit shown
in Figure 1.
25V
Vi"
5V
V~,
30mA
I,
Ti - 2S"C

SOD
400
300

200

.,

~

oS

;::

200

"';:::::;;

100

t"
t"

50
40

,
t f;

oS

I

2.5

DIODE FORWARD VOLTAGE (V)

Turn·on Time
1000

T, ::: 25°C

V_ I

C

I.

VMAXIMUM

J

0:

......0
0

T j = 25°C
1,=30mA- I---

III

I
-'

I-

1/ /

!

l-

...::;;

•

Diode Forward Characteristics

20

::::?'" r-I-

.t1..

100

I
50
40

30

30

20

20

10

10

2
I, -

6 7 8 9 10
OUTPUT CURRENT (A)

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580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

20

2
I, -

7-15

5678910
OUTPUT CURRENT (AI

20

PRINTED IN U.S.A.

POWERINTEGRATEO- CIRCUIT
Switching Regulator 10 ·Amp Positive and Negative
Power Output Stages

PIC660
PIC661
PIC662
PIC670
PIC671
PIC672

FEATURES
• Designed and characterized for switching regulator applications
• Cost saving design reduces size, improves efficiency, reduces noise and RFI (See note 4.)
• High operating frequency (to >lOOkHz) results in smaller inductor-capacitor filter
and improved power supply response time
• High operating efficiency: Typical5A circuit performanceRise and Fall time <300ns
Efficiency >85%
• No reverse recovery spike generated by commutating diode (See note 4. and Fig. 2.)
• Electrically isolated, 4-Pin, TO-66 hermetic case (500V, 11'A, ali leads common)
DESCRIPTION
The Unitrode Switching Regulator is a unique hybrid
transistor circuit, specifically designed, constructed and
specified for use in high current switching regulator appli.
cations.The designer is thus relieved of one of the most time
consuming, tedious and critical aspects of switching regulator
· design: choosing the appropriate switching transistors and
commutating diode, and empirically determining the optimum
· drive and bias conditions.

significant drawbacks to switching regulators: noise generation
and slow response time; there is, in fact, no diode ·reverse
recovery spike (See note 4.).
The PIC600 series switching regulators are designed and
characterized to be driven with standard integrated circuit
voltage regulators. They are completely characterized over
their entire operating range of -55'C to +l25'C. The devices
are enclosed in a special 4-Pin TO-66 package, hermetically
sealed for high reliability. The hybrid circuit construction
utilizes thick film resistors on a beryllia substrate for maximum
thermal conductivity and resultant low thermal impedance. All
of the active elements in the hybrid are fully passivated.

Switching regulators; when compared to conventional regulators, result in significant reductions in size, weight, and
internal power losses and a major decrease in overall cost.
· Using the Unitrode PIC600 series the designer can achieve
further improvements in size, weight, efficiency, and costs. At
the same time, because of the PIC600 series design and
. packaging, the designer is aided in overcoming two of the most

SCHEMATIC

PIC660
PIC661.
PIC662

pos.

Application Notes U-68 and U-76 provide a detailed description of the hybrid circuit and design guidance for specific
circuit applications_

pos.

NEG. 4
INPUT 0-.....------..

, -____~~ OUTPUT

INPUT

PIC670
PIC671
PIC672

NEG.
,-<1"-.....-0 OUTPUT

2
COMMON

DRIVE

COMMON

MECHANICAL SPECIFICATIONS
NOTES:

PIC660 PIC661 PIC662 PIC670 PIC671 PIC672

1. Case is electrically isolated.
2. Loads may be soldered to within
1116" of base provided temperaturetime exposure is less than 260"C
for 10 seconds.

Ins.
A

.620 MAX

mm
157!) MAX

B

050-.075

127-191

C

028-034

071-086

0

958-962

24.33-24.43

E

F

.190-.210

190-210

4-P.in TO·66

4.83-533
483-5.33

G

.350 MAX. RAO

889 MAX RAO

H

510-!!J90

1448·1499

J

t42-.1S2DIA

K

360 MIN

9.14 MIN

L

250-340

635-8.64

361-386 DIA

nL:::'Jn

SEMICONDUCTOR
PRODUCTS

4/82

7-16

_UNITRDDE

PIC660

PIC661

PIC662

PIC670

PIC671

PIC672

ABSOLUTE MAXIMUM RATINGS
PIC671
PIC672
PIC660
PIC661
PIC662
PIC670
-BOV ........ -lOOV
Input Voltage, V.-2 ........................... 60V ......... BOV ......... 100V ......... -60V
-BOV .........-lOOV
Output Voltage, V'-2 .......................... 60V ......... BOV ......... 100V ......... -60V
-5V ......... -5V
Drive-Input Reverse Voltage, V3-4 .............. 5V ......... 5V ......... 5V ......... -5V
-lOA ......... -lOA
Output Current, I, ............................ lOA ......... lOA......... lOA ......... -lOA
O.4A ......... 0.4A
Drive Current, I, ............................ -0.4A ........ -0.4A ......... -0.4A.. .. .. ... O.4A
Thermal Resistance
Junction to Case, 8J-c
Power Switch ............................................................. 4.0'C/W .................................... .
Commutating Diode ............................................•..•...... 4.0'C/W ..........................•....... '"
Case to Ambient, 8C- A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60.0'C/W .. .................................. .
Operating Temperature Range, Tc ............................................ -55'C to +125'C................................ .
Maximum Junction Temperature, TI .............................•...........••.....+150'C .....•..................•............
Storage Temperature Range ....••......................................•...•. -65'C to +150'C ............................... .

III

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

Test
Current Delay Time

Symbol

tdl

PIC660/6611662
Min. Typ. Max.

-

35

60

Current Rise Time

tri

-

65

150

Voltage Rise Time

t"

-

40

60

Voltage Storage Time

tsv

900

Voltage Fall Time

tfv

Current Fall Time

tli

-

~

-

Efficiency (Notes 2 and 4)

PIC670/671/672
Min.

-

Typ.

Max,

Units

35

60

ns

VI" = 25V(-25V)
V O ", = 5V(-5V)

Conditions

65

175

ns

40

60

ns

10"' = 5A(-5A)

-

-

900

-

ns

I, = -30mA(30mA) NOTE 5

70

175

-

100

300

ns

See Figure 2

175

300

175

300

ns

See notes 1, 2, 4

85

-

-

1.0
2.5
.85

1.25

85

-

%

1.5

-

-1.0

-1.5

V

I. = 5A(-5A), 13 = -.03A(.03A) NOTE 5

3.5

-

-2.5

-3.5

V

I. = 10A(-lOA), 13 = -.03A(.03A) NOTE 5

-.85

-1.25

V

I, =5A(-5A)

-.95

-1.75

V

-0.1

-10

p.A

V. = Rated input voltage

On-State Voltage (Note 3)

V4-I[ool

On-State Voltage (Note 3)

V.... 1[0"1

-

Diode FWd. Voltage (Note 3)

V2_ I (on)

-

Diode Fwd. Voltage (Note 3)

V'_I[o"1

-

.95

1.75

0.1

10

Off-State Current

I.-I

Off-State Current

I.-I

-

1,-,

-

10

Diode Reverse Current

1.0

10

Diode Reverse Current

11-2

-

500

-

-

-

I, = lOA(-lOA)

-10

-

p.A

V. = Rated input voltage, TA = 100'C

-1.0

-10

p.A

V, = Rated output voltage

p.A

V, = Rated output voltage, T A = 100'C

500

-

NOTES:

1. In switching an inductive load, the current will lead the voltage on turn-on and lag the voltage on turn-off (see Figure 2). Therefore, Voltage Delay Time
(tov) '" Idl + t,; and Current Storage Time (tsl) '" Isv + tfv.
2. The efficiency is a measure of internal power losses and is equal to Output Power divided by Input Power. 1 he switching speed circuit of Figure 1, in
which the efficiency is measured, is representative of typical operating conditions for the PIC600 series switching regulators.
3. Pulse test: Duration = 300p.s, Duty Cycle :5 2%.
4. As can be seen from the switching waveforms shown in Figure 2, no reverse of forward recovery spike is generated by the commutating diode during
switching! This reduces self·generated noise, since no current spike is fed through the switching regulator. It also improves efficiency and reliability,
since the power switch only carries current during turn-on.
5. To insure safe operation 13 should be ~ 130mAI during TON. Operation at 13 < 130mAI can permanently damage device.
POWER DISSIPATION CONSIDERATIONS
The total pow,;r losses in the switching regulator is the sum of the switching losses, and the power switch and diode D.C. losses. Once total power dissipation has
been determined, the Power Dissipation curve, or thermal resistance data may be used to determine the allowable case or ambient temperature for any
operating condition.
The switching losses curve presents data for a frequency of 20KHz. To find losses at any other frequency, multiply by 1120KHz.
The D.C. losses curve presents data for a duty cycle of .2. To find D.C. losses at any other duty cycle, multiply by 0/.2 forthe power switch and by (1·0)/.8 forthe
diode.
At frequencies much below 10KHz the above method for determining the allowable case or ambient temperature becomes invalid and a detailed transient
thermal analysis must be performed. Please see Design Note 6 (DN·6) for further information.

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7-17

PRINTED IN U.S.A.

PIC660

PIC661

Power Dissipation

~

100

35

90
f

~

25

>

«
I

70
60

UJ

20

(j
iL

1\'\

0

«
'"

12

0

-

'"
'""-0

r-----

"'00

«
;:

10

TYPICAL /

IOJ

Z

I

I

,/

0

-"

I

MAXIMUM TJ = 25°C
b=30mA -

10

I

TYPICAL

I

/

-

v_~y

/1
o

.5
V•. ,(on) -

V'_,(on)- ON-STATE VOLTAGE (V)

Ti

400
300

= 25'C

200

-;;;-

TI

200

=
=
=25'C ,
t

.s

"';::::E

100

-

/

,j

_r-

JIf.

100

I

t"
t"

50
40

=25°C

As measured in the circuit shown
in Figure 1.
V,. 15V
V~. 5V
10 30mA

soo

.s
I

/

Fall Time
1000

As measured in the circuit shown
in Figure I.
V,. = 15V
V~. = 5V
10 = 30mA

500
400
300

MAXIMUM
TI

1.5
2.5
DIODE FORWARD VOLTAGE (V)

Turn·on Time
1000

/

I

J

C

I.

0

"';::::E

\

20

18

;;;

\

=-15V, V•• =-5V, 10RlVE =+30mA_)

On·State Characteristics
20

"''"
'":::>
u
"'!;:

COMMUTATING DIODE

Figure 2. PIC660, 661, 662 Switching Waveforms

Figure 1. PIC660, 661, 662 Switching Speed Circuit

~
z

'

!

\

Note: PIC670, PIC671, PIC672 Circuit and waveforms are identical but of opposite polarity (V,.

I-

PIC672

30

50
40
30

20

20

10

10
2

6 7 8 9 10
I, - OUTPUT CURRENT (A)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172

TEL (617) 926-0404 • FAX (617) 924-1235

20

2

I, -

7-19

45678910
OUTPUT CURRENT (AI

20

PRINTED IN U.S.A.

PIC 7501-PIC 7512

PIC 7519-PIC 7530

PIC 7555-PIC 7566

Semiconductor Devices, Silicon
Hybrid Switching Regulators
High Reliability Types

PIC 600/6011602
PIC 610/611/612
PIC 625/626/627
PIC 635/636/637
PIC 660/661/6S2
PIC 670/671/672

Test Level T1

Test Level T2

PIC 7501/7502/7503
PIC 7504/7505/7506
PIC 75071750817509
PIC 7510/751117512
PIC 75551755617557
PIC 7558/7559/7560

PIC 7519/7520/7521
PIC 7522/7523/7524
PIC 7525/752617527
PIC 752817529/7530
PIC 75611756217563
PIC 7564/7565/7566

Contents
1.0
2.0
3.0
4.0

Scope
Applications Documents
Requirements
Quality Assurance Provisions

n nSEMICONOUCTOR
eJ
PRODUCTS
7-20

_UNITRDDE

PIC 7501-PIC 7512

PIC 7519-PIC 7530

PIC 7555-PIC 7566

1.0 SCOPE
This specification defines the detail requirements for High
Reliability Hybrid Switching Regulators. Very extensive 100%
testing for parameter stability has been included in the Quality
Assurance Provisions.

1.1a Absolute Maximum Ratings

Input Voltage, V4-2
Output Voltage, V1.2
Drive-Input Reverse Voltage, V3-4
Output Current, 11
Drive Current, 13
Thermal Resistance
Junction to Case; J.C
Power Switch
Commutating Diode
Case to Ambient, C-A
Operating Temperature Range, Tc
Maximum Junction Temperature, 1j
Storage Temperature Range

e

e

T1

T1

T1

T1

T1

T1

PIC7501

PIC7502

PIC7503

PIC7504

PIC7505

PIC7506

T2

T2

T2

T2

T2

T2

PIC7519
(PIC600)

PIC7520
(PIC601)

PIC7521
(PIC602)

PIC7522
(PIC610)

PIC7523
(PIC611)

PIC7524
(PIC612)

60V
60V
5V
5A
-0.2A

80V
80V
5V
5A
-0.2A

100V
100V
5V
5A
-0.2A

-60V
-60V
-5V
-5A
0.2A

-80V
-80V
-5V
-5A
0.2A

-100V
-100V
-5V
-SA
0.2A

..
..
..

4.0·C/W
4.0·C/W
60.0·C/W

II

..

-55·C to + 125·C
+150·C
-65·C to +150·C

...
...

..

""

II
II

II

1.1b Absolute Maximum Ratings

Input Voltage, V4-2
Output Voltage, V1.2
Drive·lnput Reverse Voltage, V 3-4
Output Current, 11
Drive Current, 13
Thermal Resistance
Junction to Case, J.c
Power Switch
Commutating Diode
Case to Ambient, C-A
Operating Temperature Range, Tc
Maximum Junction Temperature, 1j
Storage Temperature Range

e
e

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

T1

T1

T1

T1

T1

T1

PIC7507

PIC7508

PIC7509

PIC7510

PIC7511

PIC7512

T2

T2

T2

T2

T2

T2

PIC7525
(PIC625)

PIC7526
(PIC626)

PIC7527
(PIC627)

PIC7528
(PIC635)

PIC7529
(PIC636)

PIC7530
(PIC637)

60V
60V
5V
1SA
-0.4A

80V
80V
5V
15A
-OAA

100V
100V
5V
15A
-O.4A

-60V
-60V
-5V
-15A
O.4A

-80V
-80V
-5V
-1SA
OAA

-100V
-100V
-5V
-15A
0.4A

....
..

4.0·C/W
4.0·C/W
60.0·CIW
-55·C to + 125·C
+150·C
-65·C to + 150·C

""

..""

7-21

II
II
II

...
II
II

PRINTED IN U.S.A.

•

PIC 7501-PIC 7512

PIC 7519-PIC 7530

PIC 7555-PIC 7566

1.1c Absolute Maximum Ratings
Positive
Output

Input Voltage, V4•1
Output Voltage, V,.2
Drive-Input Reverse Voltage, V3.1
Peak Output Current, I'Pk
Drive Current, 13
Thermal Resistance
Junction to Cas", RJ.e
Power Switch
Commutating Diode
Case to Ambient, fJ C-A
Operating Temperature Range, Tc
Maximum Junction Temperature, lj
Storage Temperature Range

Negative
Output

TI

TI

TI

T2

T2

T2

PIC7555

PIC7556

PIC7557

PIC7558

PIC7559

PIC7560

T2

T2

T2

T2

T2

T2

PIC7561
(PIC660)

PIC7562
(PIC661)

PIC7563
(PIC662)

PIC7564
(PIC670)

PIC7565
(PIC671)

PIC7566
(PIC672)

60V
60V
5V
lOA
-O.4A

BOV
BOV
5V
lOA
-O.4A

100V
100V
5V
lOA
-O.4A

-60V
-60V
-5V
-lOA
O.4A

-BOV
-SOY
-5V
-lOA
O.4A

-100V
-10OV
-5V
-lOA
O.4A

....
..
...

•..
•

4.0°C/W
4.0°C/W
60.0°C/W
-55°C to + 125°C
+150°C
-65°C to +150°C

•.
•

1.1 d Electrical Specifications (at 25°C unless noted)
PIC7501-3
PIC7519-21
Test

Symbol

Min.

PIC7504-6
PIC7522-24
Max.

-

20

40

-

20

40

ns

-

50

75

50

75

ns

30

50

900

-

-

-

900

1

Current Delay Time

tdi

2

Current Rise Time

trj

3

Voltage Rise Time

trv

4

Voltage Storage Time

tsv

5

Voltage Fall Time

tfv

50

75

6

Current Fall Time

tfi

-

70

150

7

Efficiency (Notes 2 and 4)

~

-

85

-

8

On·State Voltage (Note 3)

V4"(On)

-

1.0

1.5

9

On·State Voltage (Note 3)

V4•1 (on)

-

2.5

3.5

-

0.8

1.0

1.0

1.5

10

Diode Fwd. Voltage (Nole 3)

V2•1 (on)

11

Diode FWd. Voltage (Note 3)

V2•1 (on)

12

Off·State Current

14-1

13

Off·State Current

14-1

14

Diode Reverse Current

15

Diode Reverse Current

1 •2
'
1 •2
'

Min.

Typ.

-

-

-

0.1

-

0.01

-

1.0
0.5

10
1.0
10
1.0

-

Typ.

30

Max.

Conditions

Units

Vin = 25V ( - 25V)
Vout = 5V(-5V)

= 2A(-2A)
= - 20mA (20mA) (Note 5)

50

ns

lout

-

ns

13

50

75

ns

See Figure 1

70

ISO

ns

See Notes I, 2, 4

85

-

%

-1.0

-1.5

V

-2.5

-3.5

V

-0.8

-1.0

V

-1.0

-1.5

-0.1
-0.1

-

-1.0

-

-05

-10
-1.0
-10
-1.0

V
~A

rnA
~A

rnA

= 2A(-2A), 13 = - 0.02A (0,02A)
= 5A(-5A), 13 = - 0,02A (0,02A)
12 = 2A(-2A)
12 = SA (-SA)
V4 = Rated input voltage
V4 = Rated input voltage. TA = 100·C
V, = Rated output vollage
V, = Rated output voltage. TA = 100·C
14
14

Notes:
I. In switching an inductive load, the current will lead the voltage on turn·
on and lag the voltage on turn-off (see Figure 1). Therefore, Voltage
Delay Time (tDV) '" tdi + tri and Current Storage Time (tsi) '" tsv + ltv·
2. The efficiency is a measure of internal power losses and is equal to
Output Power divided by Input Power. The switching speed circuit of
Figure I, in which the efficiency is measured, is representative of
typical operating conditions for the PIC600 series switching regulators.

5. To insure safe operation, absolute value of 13 should be a minimum
of 20mA during t(on)' Operation with 13 below 20mA can permanently
damage the device.
6. To insure safe operation, absolute value of 13 should be a minimum
of 30mA during ~on). Operation with 13 below 30mA can permanently
damage the device.

3. Pulse test: Duration = <; 400~s. Duty Cycle <;2%.
4. As can be seen from the switching waveforms shown in Figure I, no
reverse or forward recovery spike is generated by the com mutating
diode during switching! This reduces self·generated noise, since no
current spike is fed through the switching regulator, It also improves
efficiency and reliability, since the power switch only carries current
during turn-on.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

7·22

PRINTED IN U.S.A.

PIC 7501-PIC 7512

Test

Symbol

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

tdi

-

35

60

35

60

ns

65

150

65

175

ns

40

60

-

40

60

ns

'out

-

ns

'3

2

CUrrent Rise Time

tr;

3

Vollage Rise Time

Irv

4

Vollage Storage Time

Isv

5

Voltage Fait Time

I,v

6

Current Fall Time

Ifi

7

Efficiency (Noles 2 and 4)

8

On·Slale Voltage (Nole 3)

V4•1(on)

9

On·Slale Voltage (Nole 3)

V4-1 (on)

~

11

Diode FWd. Vollage (Nole 3) V2•1 (on)
Diode Fwd. Voltage (Nole 3) V2•1 (on)

10
12

Off·Slale Currenl

13

Off·Slate Current

14

Diode Reverse Current

15

Diode Reverse Current

' 4 •1
'4•1
' 1•2
' 1•2

1200

-

70

175

175

300

85

-

1.0

1.5

2.5

3.5

0.85

1.25

0.95

1.75

0.1

-

10

0.01
1.0

-

1.0

-

10

0.5

1.0

PIC7555-7
PIC7561-3
Test

See NOles 1, 2, 4

85

-

%

-1.0

-1.5

V

-2.5

-3.5

V

-0.85

-1.25

V

-0.95

-1.75

V

-0.1

~A

-10
-1.0

-0.1
-1.0

mA
~A

-10

-0.5

-1.0

rnA

= 7A (-7A), '3 = -0.03A (0.03A)
= 15A ( -15A), '3 = - 0.03A (0.03A)
'2 = 7A(-7A)
'2 = 15A(-15A)
V4 = Raled inpul vollage
V4 = Raled inpul voltage, TA = 100'C
VI = Raled OUlpul vollage
VI = Raled oulpul vollage, TA = 100'C
'4
'4

PIC7558·60
PIC7564·6
Min.

Typ.

Max.

Units

60

35

60

ns

65

150

65

175

ns

40

60

-

40

60

ns

1200

-

-

1200

-

ns

100

300

ns

See Figure 1

175

300

ns

See Noles 1, 2, 4

-

0"

See NOles 2 and 4

-1.0

-1.5

V

'4 = SA (-5A), '3
Noles 3, 5

-3.5

V

'4 = 10A(-10A),13
NOles 3,5

= SA (-SA)
= 10A(-10A)
V4 = Raled inpul vollage
V4 = Raled inpul voltage, TA = 100'C
VI = Raled oulpul vollage
VI = Raled OUlpUI vollage, TA = 100'C

Isv

-

5 Vollage Fall Time

Ifv

6 Current Fall Time

Ifi

1.0

1.5

-

-

2.5

3.5

-

-2.5

-

0.85

1.25

-1.25

V

1.75

-0.95

-1.75

V

10

-

-0.85

0.95

1

-

10

-

8 On·Slale Vollage

V4•1(on)

-

9 On·Slate Voltage

V4•1 (on)

~

10 Diode FWd. Voltage

V2•1 (on)

11

V2•1 (on)

14 Diode Reverse Current

See Figure 1

ns

Max.

4 Voltage Storage Time

15 Diode Reverse CUrrent

ns

35

tri

13 Off·Stale Currenl

300
300

Typ.

trv

12 Olt-Slale Current

100
175

Min.

3 Vollage Rise Time

Diode FWd. Voltage

= 7A(-7A)
= - 30mA (30mA) (Nole 6)

Idi

2 Current Rise Time

7 Efficiency

1200

Conditions

Vin = 25V (-25V)
VOUI = 5V (-5V)

Symbol

-

1 Current Delay Time

PIC 7555-PIC 7566

PIC7510·12
PIC7528·30

PIC7507·9
PIC7525·27

1 Current Delay Time

PIC 7519-PIC 7530

'4•1
' 4•1
' 1•2
' 1•2

70

175

175

300

85

-

0.1
.01
1.0
0.5

1.0

85

-0.1
-.01

-10

~A

-1

rnA

-1.0

-10

~A

-0.5

-1.0

rnA

Conditions

= 25V (-25V)
VOUI = 5V (-5V)
'out = SA (-SA)
'3 = 30mA ( - 30mA)(Nole 6)
Yin

=-

30mA (30mA),

=-

30mA (30mA),

'2
'2

V4-1

t

POWER SWITCH

Vin = +25V -~VV'\r'--!-o

Toff:::. 40",S

!"·········;~l·············

Pulse Width:::: lOps
Rep. Rale ~ 20kHz

Note: See Table I for R, L
and C values.

i

..

1/[

............·. ·......·. ·.... '\

COM MUTATING DIODE

\

..

Note: No Diode Reverse or Forward Recovery Spike
(See note 4.).

Positive Output Switching Speed Circuit

Positive Output Switcliing Waveforms
Note: Negative test circuit and waveforms are identical but of opposite polarity (Vin ~ - 25V, Vout = - 5V).
Figure 1.
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

7·23

PRINTED IN U.S.A.

PIC 7501-PIC 7512

PIC 7519-PIC 7530

PIC 7555-PIC 7566

Tablel.
Component Values for SWitching Speed Circuit

13 required
20mA

1.2 kohms ± 5% tolerance

30mA

820 ohms ±5% tolerance

L

14 current

C

2.5 ohms ± 1% 10 watt

300,..H

. 50,..F 100V electrolytic

5A

1 ohm ±1%50watt

150,..H

150,..F 100V electrolytic

7A

0.714 ohms ±1%35watt

150,..H

150,..F 100V electrolytic

2A

MECHANiCAL Sri:CiFiCATiuN5
Notes: 1. Case is electrically isolated.
2. Loads may be soldered to
within ';';: of base provided
temperature-lime exposure is
less than 260·C for 10 seconds.

4-PinlO-66

A

.620

~=:..

1!1.7$

M~:'

--

~~5 ~_~_~ __ .~_

~~---~~
~~-:962
24.33·24.43

~*---~~~
G

.350 MAX, RAO 889 MAX. RAD.

~ ~~D.A.

3.61-3.86D1A.

~~~-~----

SCHEMATIC

pos. 04 """1~t-I.

INPUT

1 pos.
r---",,-OOUTPUT

NEG. 4
O---,r---,.
INPUT

1 NEG.
rr-r--OOUTPUT

2
COMMON

PIC7501-3, PIC7519-21
PIC7507-9, PIC7525-27
PIC7555-57, PIC7561-65

PIC7504-6, PlC7522-24
PIC751D-12, PlC7528-3D
PIC7558-60, PIC7564--66

. Figure 2. Physical Dimensions and Biasing Diagrams
2.0 APPLICABLE DOCUMENTS
The following documents of the issue in effect on the date of
invitations for bids, form a part of this specification to the extent
specified herein.
MIL-S-19500 - General SpecifICations for Semiconductor
Devices
MIL-S-19491 - Preparation for Delivery of Semiconductor
Devices

7-24

PIC 7501-PIC 7512

PIC 7519-PIC 7530

PIC 7555-PIC 7566

'3.0 REQUIREMENTS
3.1 Design and Construction
The Hybrid devices supplied under this specification shall
have a design and construction such that they will meet all of
the requirements specified herein. The dimensions and
physical characteristics shall be as specified in Figure 2.
3.2 Performance Characteristics
The performance characteristics of the Hybrid device supplied
under this specification shall be as specified in Group A inspection defined in Table III.

4.1.4.2 Inspection Sublot - An "inspection sublot" shall consist of a collection of devices of a single type which have been
manufactured under the same conditions and with the same
materials.
4.1.4.3 Shipment Lot - A "shipment lot" shall consist of
devices taken from an accepted inspection lot for the purpose
_of shipment on a specific contract or order.
4.1.4.4 Group A Inspection - Group A inspection shall consist of the examinations and tests specified in Table I, and
shall be performed on a sublot basis.

3.3 Quality Assurance
The Quality Assurance Provisions shall be as defined in
paragraph 4.0.

4.1.4.5 Controlled Inventory - The controlled inventory shall
consist of lots which have successfully passed the acceptance
inspection and are being held in storage prior to actual shipment. A controlled inventory shall have adequate safeguards
to insure that no defective or untested devices can be included in it. It shall be accessible only to those individuals who are
formally identified as authorized personnel.

3.4 Test Methods
Test methods shall be as specified herein.
3.5 Marking
The markings on the devices supplied shall be permanent
and legible and shall include the Manufacturer's name or
trademark, a Manufacturing Date Code in accordance with
MIL-S-19500 and the specific device type number.

4.2 Acceptance Inspection
The acceptance inspection requirements shall be as defined
by the applicable test level. The procedures of MIL-S-19500
shall apply to Group A inspection. Inspection lots which have
been inspected and accepted shall be kept in a controlled
inventory. Shipment lots shall be formed using devices taken
from accepted inspection lots.

3.6 Preparation for Delivery
The Hybrid devices supplied under this specification shall be
prepared for delivery in accordance with level C of MILS-19491 unless otherwise directed in the specific contract or
purchase order.

4.2.1 Test Level T2 Requirements - Test level T2 shall consist of the following requirements,
4.2.1.1 The supplier shall perform the Parameter Stability
Testing defined in paragraph 4.3 on each device to be supplied. Prior to starting the Blocking Stability test defined in
paragraph 4.3.6, each device shall be serialized for individual
identity. Variables test data for the controlled electrical parameters shall be recorded before and after stressing. The same
procedure shall apply for the Power Stress stability test
defined in paragraph 4,3.8.

3.7 Ordering Data
Procurement documents should specify the following:
a. Specific item type number
b. Number and date of this specification
c. Quality Assurance Test level required
d. Any special packaging if required
4.0 QUALITY ASSURANCE PROVISIONS
4.1 General Provisions

o,

4.1.1 Inspection Responsibility - The supplier is responsible for the performance of all inspection requirements and
acceptability of results as specified herein for the Test Level
identified in the contract or purchase order.

4.2.1.3 With each shipment lot, the supplier shall provide a
Certificate of Compliance to test level T2 of this specification.
4.2.2 Test Level T1 Requirements - Test level T1 shall consist of the following requirements.

4.1.2 Controlled Manufacture - The devices supplied under
this specification shall be manufactured under controlled
conditions usingiormally defined quality assurance methods
and systems.
4.1.3 Manufacturing liaceabllity - Each device supplied
under this specification. shall be traceable to a specific process group, to permit tracing of its full manufacturing history,
Process group records shall indicate the exact date that each
manufacturing operation was performed and identify materials
and process procedures which were used. The manufacturer
shall keep these records on file for at least five years.
4.1.4 Definitions
4.1.4.1 Inspection Lot- An "inspection lot" is a collection of
devices from which a sample is withdrawn and inspected to
determine compliance with the acceptibility criterion. It shall
consist of one or more "inspection sublots" of the device
types defined in this specification. The maximum inspection
lot size shall be 5000 units,
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4.2.1.2 The supplier shall perform the Group A inspections in
accordance with the defined LTPD requirements on each inspection sublot. Electrical parameter testing as specified shall
be performed by variables with test data recorded.

4.2.2.1. The supplier shall perform the Parameter Stability
Testing defined in paragraph 4.3 on each device to be supplied. Electrical parameter testing as specified shall be performed by attributes.
4.2.2.2 The supplier sh!lll perform the Group A inspections in
accordance with the defined LTPD requirements on each inspection sublot. Electrical parameter testing as specified shall
be performed by attributes with test data recorded.
4.2.2.3. With each shipment lot, the supplier shall provide a
. Certification of Compliance to test level T1 of this
specification.
4.3 Parameter Stability Tests
Each hybrid device to be supplied under this specification
shall receive the following tests in addition to other standard
testing performed by the manufacturer.

7-25

PRINTED IN U.S.A.

•

PIC 7501-PIC 7512
4.3.1 Temperature Storage - Each Hybrid device shall be
subjected, in a non-operating state, to a temperature of 150°C
for a minimum period of 48 hours.

PIC 7519-PIC 7530

PIC 7555-PIC 7566

4.3.6 High Temperature Reverse Bias - Each Hybrid device
will be high temperature reversed biased in the circuit shown
in Figure 3. The conditions of this test are as follOWS:
TA = +125°C
Time = 16 hours ~g hours
Circuit and voltages as shown in Figure 3.

4.3.2 Temperature Cycling - Each Hybrid device shall be
temperature cycled from -55°C to 150°C for a minimum of 10
cycles. Each cycle shall consist of at least·15 minutes at each
temperature extreme with a maximum transition time of 5
minutes between each temperature extreme..

+VOLTAGE = BO%OF
DEVICE RATING (NOMINAL)

4.3.3 Hermetic Seal Test - Fine Leak ~ Each Hybrid
device shall be tested for a case leakage rate of 1 x 10- 8
cc/sec or smaller using a helium mass spectrometer or
equivalent method. Devices with a case leakage rate greater
than specified shall be removed from the lot.
4.3.4 Hermetic Seal Test - Gross Leak - Each Hybrid
device shall be tested for gross leaks using flUorocarbon gross
leak test or equivalent method. Devices with any indication of
case leakage shall be removed from the lot.

L. ____

±_

Figure 3.

High Temperature Reverse Bias Circuit

'--+"'~-'VVv-o

4.3.5 Reverse Bias Clamp Inductive Test -

_~;

-VOLTAGE = BO%OF
DEViCE RATiNG iNOMiNALj

V4-2 = Rated Input Voltage
f ::: 25kHz, EOU! = 5V
Tc = 25°C, see Figure 4
lout - See Table II
t = 1 sec max

4.3.7 The following measurements will be made before and
after the high temperature reverse bias test. The unit
measurements shall be recorded or the devices will be celled
in order to compare and guarantee the delta (./l.) requirements
depending on the test level to which the lot is, being prepared.

Part Type

Test
1.1.0

Maximum
Readings
Initial
& Final

PIC7501/7502/7503/7519/7520/7521

8

1.5V

±0.3V

V4-1 (on)

PIC750717508/7509/7525/7526/7527

8

1.5V

±0.3V

V4-1 (on)

PIC7555/7556/755717561 1756217563

8

1.5V

±0.3V

V4-1 (on)

PIC7504/7505/7506/7522/7523/7524

8

-1.5V

±0.3V

PIC750717508/7509/7528/7529/7530

8

-1.5V

±0.3V

V4-1 (on)
V4.1 (on)

PIC7558/7559/7560/7564/7565/7655

8

-1.5V

±0.3V

V4.1 (on)

PIC7501/7502/7503/7519/7520/7521

10

1.0V

±0.25V

V2.1 (on)

PIC750717508/7509/7525/7526/7527

10

1.25V

±0.3V

V2.1 (on)

PIC7555/7556/755717561/7562/7563 -

10

1.25V

±0.3V

V2.1 (on)

PIC7504/7505/7506/7522/7523/7524

10

±0.25V

V2•1 (on)

PIC750717508/7509/7528/7529/7530

10

-1.0V
-1.25V

±0.3V

V2.1 (on)

PIC7558/7559/7560/7564/7565/7655

10

-1.25V

±0.3V

V2.1 (on)

Delta
Change

Symbol

PIC7501/7502/7503/7519/7520/7521

12

10~

±1.00r ±100%-

PIC750717508/7509/7525/7526/7527

12

10~

±1.00r ±100%-

PIC7555/7556/755717561 17562/7563

12

10~

±1.00r ±100%-

PIC7504/7505/7506/7522/7523/7524

12

-10~

± 1.0 or ± 100%-

PIC750717508/7509/7528/7529/7530

12

-10~

± 1.0 or ± 100%-

PIC7558/7559/7560/7564/7565/7655

12

-10~

i1.0 or ± 100%-

PIC7501/750217503/7519/7520/7521

14

10~

±2.00r ±100%-

PIC750717508/7509/7525/7526/7527

14

10~

±2.00r ±100%-

PIC7555/7556/755717561 17562/7563

14

10~

±2.00r.±100%-

PIC7504/7505/7506/7522/7523/7524

14

-10~

±2.00r±100%-

PIC750717508/7509/7528/7529/7530

14

~10~

±2.00r ±100%-

PIC7558/7559/7560/7564/7565/7655

14

-10~

±2.0 or ± 100%-.

14.1
14.1
14.1
14-1
14.1
14.1
12.1
12.1
12.1
12.1
12.1
12.1

.. Whichever is greater.

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PRINTED IN U.S.A

PIC 7501-PIC 7512

PIC 7519-PIC 7530

PIC 7555-PIC 7566

4.3.8 Power Stress - Each Hybrid device shall be burned-in
using the circuit shown in Figure 5. The conditions are as
follows:

4
V4-2o------'i
Rated Voltage

TA = +25°C
Time = 40 hours minimum
Circuit and conditions as shown in Figure 5.

Nole1

I

4.3.S The readings before and after burn-in shall be as
specified in paragraph 4.3.7 above.

I

.'u-lf

v4

--ll-Ton==10~s

Note 1: Adjust Toft to obtain specified lout.
Note 2: Negative output test circuits and waveforms are
identical but of opposite polarity.
Note 3: See Table II for component values.
Figure 4.

Reverse Bias Clamp Inductive Test Circuit

Table II.
Component Values for Clamped Inductive Test
(Refer to Figure 4)
Device Type

R3L

LIC

RL

lOUT

PIC 7501,7504
PIC 751S, 7522

3K

300/100

2.5

2

PIC 7502, 7505
PIC 7520, 7523

4K

3001100

2.5

2

PIC 7503, 7506
PIC 7521, 7524

5K

3001100

2.5

2

PIC 7507, 7525
PIC 7510, 7528
PIC 7555, 7561
PIC 7558, 7564

2K

1501100

1

5

PIC 7508, 7526
PIC 7511, 7529
PIC 7556, 7562
PIC 7559, 7565

2.7K

1501100

1

5

PIC 750S, 7527
PIC 7512, 7530
PIC 7557, 7563
PIC 7560, 7566

3.3K

1501100

1

5

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7-27

PRINTED IN U.S.A.

PIC 7501-PIC 7512

PIC 7519-PIC 7530

PIC 7555-PIC 7566

Table III. Group A Inspection

Examination or Test

Symbol

Subgroup 1
Visual and Mechanical

-

Subgroup 2 25°C Tests
On-State Voltage
On-State Voltage
Diode Forward Voltage
Diode Forward Voltage
Off-State Current
Diode Reverse Current

V4 •10n
V4 •10n
V2.10n
V2•10n
14 .1
11.2

Subgroup 3
Cff~Smtc

Adjust Ein

to obtain

Eoot = 5V

22
(10)

0

45
(5)

0

45
(5)

C

45
(5)

0

10
11
12
14

14-1

1
2

tdl
t,l
trY
tlv
t'i

3
5
6

ARNOLD
A930·157·2
N = 16TURNS
WIRE = 18AWG

output
----------,
1
Posftive

I
I
I
1
-------~

I+-

-=tflfl

13
15

I

L- _ _

5-1~SEC

8
9

11.2

Subgroup 4 25·CTests
Current Delay Time
Current Rise Time
Voltage Rise Time
Voltage Fall Time
Current Fall Time

OV-tt-

-

TA =+100·CTests

Current

Off-State Current

+Ein - I

Electrical Sample Max.
Spec Test
Size
Ace.
Number (LTPD) No.

2.511

15 WATTS

62011

-=-

Duly Cycle = 25%

AdjustEln

to obtain

Eout

Negative Output

ARNOLD
A930·157·2
N = 16 TURNS
WIRE = 18 AWG

--------1

I
1
1
I
I

= -5V

_I

Figure 5.

UNITRODE - SEMICONDUCTOR PRODUCTS
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Burn-in Circuits

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PIC 7513-PIC 7518

PIC 7531-PIC 7536

Semiconductor Devices, Silicon
Hybrid Switching Regulators
High Reliability Types

III
PIC 645/646/647
PIC 655/656/657

Test Level T1

Test Level T2

PIC 7513/7514/7515
PIC 751617517/7518

PIC 7531/753217533
PIC 7534/7535/7536

Contents
1.0
2.0
3.0
4.0

Scope
Applications Documents
Requirements
Quality Assurance Provisions

nn

SEMICONDUCTOR

~ PRODUCTS

7·29

_UNITRDDE

PIC 7513-PIC 7518

PIC 7531-PIC 7536

1.0 SCOPE
This specification defines the detail requirements for High
Reliability Hybrid Switching regulators. Very extensive 1000/0
testing for parameter stability has been included in the Quality
Assurance Provisions.

1.1a Absolute Maximum Ratings

Input Voltage, V4•2
Output Voltage, V1•2
Drive-Input Reverse Voltage, V3-4
Coniinuous Output Current, 11
Peak Output Current
Drive Current, 13
Thermal Resistance
Junction to Case, BJ.C
Power Switch
Commutating Diode
Case to Ambient, Be-A
Operating Temperature Range, Tc
Maximum Junction Temperature, lj
Storage Temperature Range

Tl
PIC7513

Tl
PIC7514

Tl
PIC7515

Tl
PIC7516

Tl
PIC7517

Tl
PIC7518

T2
PIC7531
(PIC645)

T2
PIC7532
(PIC646)

T2
PIC7533
(PIC647)

T2
PIC7534
(PIC655)

T2
PIC7535
(PIC656)

T2
PIC7536
(PIC657)

60V
60V
5V
15A
20A
-0.4A

80V
80V
5V
15A
20A
-0.4A

.
....
....

-80V
-8OV
-5V
-15A
-20A
O.4A

~

~

.

~

-55°C to +125°C
+150°C
-65°C to +150°C

~

PtC7516/17/1S
PIC7534/35/36

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

tdi

-

35

60

35

60

ns

"in = 25V (-25V)

Conditions

65

175

ns

Vout = 5V (-5V)

40

60

ns

lout=7A(-7A)
13 - - 30mA (30mA) (Note 5)

2 Current Rise Time

trj

-

65

150

3 Voltage Rise Time

trv

-

40

60

-

4 Voltage Storage Time

tsv

-

1200

-

1200

-

ns

5 Voltage Fall Time

tfv

-

-

100

300

ns

See Figure 1

6 Current Fall Time

tli

175

300

ns

See Notes I, 2, 4

7 Efficiency (Notes 2 and 4)

~

8 On·State Voltage (Note 3)

V4•I (on)

9 On·State Voltage (Note 3)

V4•1 (on)

10 Diode Fwd". Voltage (Note 3) V2•1 (on)
II Diode Fwd. Voltage (Note 3) V2•1 (on)

-

12 Off·State Current

14-1

13 Off·State Current

14-1

-

14 Diode Reverse Current

11•2

-

15 Diode Reverse Current

11•2

-

-5V

-15A
-20A
0.4A

~

Symbol

1 Current Delay Time

-100V
-100V

2°C/W
2°C/W
30.0°C/W

PIC7513/14/15
PIC7531132/33
Test

-60V
-60V
-5V
-15A
-20A
O.4A

100V
100V
5V
15A
20A
-0.4A

1.0

1.5

2.5

3.5

-

0.85

1.25
1.75

70

175

175

300

85

-

0.95
0.1
10
1.0
500

10
1000
10
1000

85

-

%

-1.0

-1.5

V

-2.5

-3.5

V

14 = 15A(-15A), 13 = - 0.03A (0.03A)

-

-0.85

-1.25

V

12 = 7A(-7A)

-

-0.95
-0.1
-10
-1.0
-500

-1.75

14 = 7A (- 7A), 13 = - 0.03A (0.03A)

V

12 = 15A(-15A)

-10

~A

V4 = Rated input voltage

1000

~A

V4 = Rated input voltage, TA = 100·C

-10

~A

VI = Rated output voltage

-1000

~A

VI = Rated output voltage, TA = 100·C

Nates:
1. In switching an inductive load, the current will lead the voltage on
turn·on and lag the voltage on turn·off (see Figure I). Therefore,
Voltage Delay Time (tDV) '" tdi + tri and Current Storage Time (lsi)
"'tsv + tfv'
2. The efficiency is a measure of internal power losses and is equal to
Output Power divided by Input Power. The switching speed circuit
of Figure 1, in which the efficiency is measured, is representative of
typical operating conditions for the PIC600 series switching
regulators.

4. As can be seen from the switching waveforms shown in Figure 1, no
reverse or forward recovery spike is generated by the com mutating
diode during switching! This reduces self·generated noise, since no
current spike is fed through the switching regulator. It also improves
efficiency and reliability, since the power switch only carries current
during turn-on.
5. To insure safe operation, the absolute value of 13 should be a
minimum of 30 mA during t(on)' Operation with 13 below 30 mA can
permanenlly damage the device.

3. Pulse test: Duration = .. 400 ~sec.

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PIC 7513-PIC 7518

PIC 7531-PIC 7536

Power Dissipation Considerations
The total power losses in the switching regulator is the sum of the switching losses, and the power switch and diode D.C. losses.
Once total power dissipation has been determined, the Power Dissipation curve, or thermal resistance data may be used to determine the allowable case or ambient temperature for any operating condition.
The switching losses curve presents data for a frequency of 20 kHz. To find losses at any other frequency, multiply by f/20 kHz.
The D.C. losses curves present data for a duty cycle of 0.2. To find D.C. losses at any other duty cycle, multiply by 0/0.2 for the
power switch and by (1-0)10.8 for the diode.
At frequencies much below 10 kHz the above method for determining the allowable case or ambient temperature becomes invalid
and a detailed transient thermal analysis must be performed. Unitrode will supply transient thermal impedance information on
request.

----+

Vin = +25V -"","".'V'v'-~

Rl = Voul
.715\1 = 5V
ICRIVE = - 30mA
. Pulse Widlh 10~s

=

Rep. Rale = 20kHz

Positive Output Switching Speed Circuit

,f POWER SWITCH

V..

Il[

·1

Ton =:: 1010'S

!··········;~l···-··········-·····--····-·-·--·······--_.

j

COMMUTATING DIODE

Note: No Diode Reverse or Forward Recovery Spike (See note 4.)1
Positive Output Switching Waveforms

Note: Negative output circuit and waveforms are identical but of opposite polarity
(Vin = -25V, Vout = -5V,IDRIVE = +30mA).
Figure 1.

UNITRODE • SEMICONDUCTOR PRODUCTS
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PIC 7513-PIC 7518

PIC 7531-PIC 7536

2.0 APPLICABLE DOCUMENTS
The following documents of the issue in effect on the date of
invitations for bids, form a part of this specification to the ex·
tent specified herein.

3.4 Test Methods
Test methods shall be as specified herein.

MIL·S·19500 - General Specification for
Semiconductor Devices
MIL·S-19491 - Preparation for Delivery of
Semiconductor Devices

3.5 Marking
The markings on the devices supplied shall be permanent
and legible and shall include the Manufacturer's name or
trademark, a Manufacturing Date Code in accordance with
MIL-S-19500 and the specific device type number.

3.0 REQUIREMENTS

3.6 Preparation for Delivery

3.1 DeSign and Construction

The Hybrid devices supplied under this specification shall be
prepared for delivery in accordance with level C of MIL-S·19491
unless otherwise directed in the specific contract or purchase
order.
.

The Hybrid devices supplied under this speCification shall
have a design and construction such that they will meet all of
the requirements specified herein. The dimensions and phys·
ical characteristics shall be as specified in Figure 2.

3.7 Ordering Data

3.2 Performance Characteristics
The performance characteristics of the Hybrid device supplied
underthis specification shall be as specified in Group A inspection
defined in Table I.
3.3 Quality Assurance

PiOCUiem6iit documeiit should SPecify' the following:

a. Specific item type number
b. Number and date of this specification
c. Quality Assurance Test level required
d. Any special packaging if required

The Quality Assurance Provisions shall be defined in
paragraph 4.0.
MECHANICAL SPECIFICATIONS
3 Pin TO-3

1Ch9

A

4

B-1

[~

1
3

C
B

0

F
G

Note: Loads may be soldered to
of base provided
within
temperature·time exposure is
less than 260°C for 10 seconds.

V,.'

ins.
.875 MAX.
.135
.250-.450
.312 MIN.
.205 .225
.420-.440
.145-.165
.395-.405
.151-.1610IA.
.188 MAX. RAO.
.525 MAX. RAO.
.708-.728
1.177 1.197
.038-.0430IA.

M
N

22.23 MAX .
3.43
6.35-11.43
7.92 MIN .
5.21-5.72
10.67 11.18
3.68-4.19
10.03-10.29
3.84-4.09 OIA .
4.78 MAX. RAO .
13.34 MAX. RAO.
17.98 18.49
29.90-30.40
.97 1.09 OIA .

~

SCHEMATIC

POS. 04---'r-M
INPUT

1 pos.
r-----cOUTPUT

NEG. 04_r-_ _,"",
INPUT

1 NEG.
r-<-t-""OUTPUT

2
COMMON

2
COMMON

PIC7513/14/15
PIC7531 132/33

PtC7516/17/18
PIC7534/35/36

Figure 2. Physical Dimensions and Biasing Diagrams
UNITRODE • SEMICONDUCTOR PRODUCTS
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PIC 7513-PIC 7518

4.0 QUALITY ASSURANCE PROVISIONS

PIC 7531-PIC 7536

4.2.1 Test Level T2 Requirements - Test level T2 shall consist of the following requirements.

4.1 General Provisions
4.1.1 Inspection Responsibility - The supplier is responsible
for the performance of all inspection requirements and accept·
ability of results as specified herein for the Test Level identified
in the contract or purchase order.
4.1.2 Controlled Manufacture - The devices supplied under
this specification shall be manufactured under controlled
conditions using formally defined quality assurance methods
and systems.
4.1.3 Manufacturing Traceability '- Each device supplied
under this specification shall be traceable to a specific.process
group, to permit tracing of its-full manufacturing history. Process
group records shall indicate the exact date that each manufacturing operation was performed and identify materials and
process procedures which were used. The manufacturer shall
keep these records on file for at least five years.

4.2.1.1 The supplier shall perform the Parameter Stability Testing defined in paragraph 4.3 on each device to be supplied.
Prior to starting the Blocking Stability test defined in paragraph
4.3.6, each device shall be serialized for individual identity.
Variables test data for the controlled electrical parameters shall
be recorded before and after stressing. The same procedure
shall apply for the Power 'Stress stability test defined in
paragraph 4.3.8...
4.2.1.2 The supplier shall perform the Group A inspections in
accordance with the defined LTPD requirements on each inspection sublot. Electrical parameter testing as specified shall be
performed by variables with test data recorded.
4.2.1.3 With each shipment lot, the supplier shall provide a
Certificate of Compliance to test level T2 of this specification.
4.2.2 Test Level T1 Requirements - Test level T1 shall consist of the following requirements.

4.1.4 Definitions
4.1.4.1 Inspection Lot - An "inspection lot" is a collection of
devices from which a sample is withdrawn and inspected to
determine compliance with the acceptability criterion. It shall
consist of one or more "inspection sublols" of the device types
defined in this specification. The maximum inspection lot size
shall be 5000 units.
4.1.4.2 Inspection Sublot - An "inspection sublot" shall consist of a.collection of devices of a Single type which have been
manufactured under the same conditions and with the same
materials.

4.2.2.2 The supplier shall perform the Group A inspections in
accordance with the defined LTPD requirements on each inspection sublot. Electrical parameter testing as specified shall
be performed by attributes with test data recorded.
4.2.2.3 The supplier shall provide a Certificate of Compliance
to test level T1 of this specification with each shipment lot.

4.1.4.3 Shipment Lot - A "shipment lot" shall consist of
devices taken from an accepted inspection lot for the purpose
of shipment on a specific contract or order.

4.3 Parameter Stability Tests
Each Hybrid device is to be supplied under this specification
and shall receive the following tests in addition to other standard testing performed by the manufacturer.

4.1.4.4 Group A Inspection - Group A inspection shall consist
of the examinations and tests specified in Table I, and shall be
performed on a sublot basis.
4.1.4.5 Controlled Inventory - The controlled inventory shall
consist of lots which have successfully passed the acceptance
inspection and are being held in storage prior to actual shipment. A controlled inventory shall have adequate safeguards to
insure that no defective or untested devices can be included in
it. It shall be accessible only to those individuals who are formally identified as authorized personnel.
4.2 Acceptance Inspection
The acceptance inspection requirements shall be as defined by
the applicable test level. The procedures of MIL-8-19500 shall
apply to Group A inspection. Inspection lots which have been
inspected and accepted shall be kept In a controlled inventory.
Shipment lots shall be formed using devices taken from
accepted inspection lots.

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4.2.2.1 The supplier shall perform,the Parameter Stability
Testing defined in paragraph 4.3 on each device to be supplied.
Electrical parameter testing as specified shall be performed by
attributes.

7-33

4.3.1 Temperature Storage - Each Hybrid device shall be
subjected, in a non-operating state, to a temperature of 150a C
for a minimum period of 48 hours.
4.3.2 Temperature Cycling - Each Hybrid device shall be
temperature cycled from -55 a C to 150aC for a minimum of 10
cycles. Each cycle shall consist of at least 15 minutes at each
temperature extreme with a maximum transition time of 5
minutes between each temperature extreme.
4.3.3 Hermetic Seal Test - Fine Leak - Each Hybrid device
shall be tested for a case leakage rate of 1 x 10" cc/sec or
smaller using a helium mass spectrometer or equivalent
method. Devices with a case leakage rate greater than
specified shall be removed from the lot.
4.3.4 Hermetic Seal Test - Gross Leak - Each Hybrid
device shall be tested for gross leaks using fluorocarbon gross
leak test or equivalent method: Devices with any indication of
case leakage shall be removed from the lot.
.

PRINTED IN U.S.A.

PIC 7513-PIC 7518

PIC 7531-PIC 7536

4.3.5 Reverse Bias Clamp Inductive Test V4-2 = Rated Input Voltage

V...

14 = 5A., f = 25 kHz, Eout = 5V

o-_ _ _4::.j

'-'

~

0:

::J

!i:UI

B
-

:;;

I

;;; +1.0 1---I----.1I---I---+--I-----tt

J

VIE (sat)

Cl

+2.0.--,---,--,-----r-':-T---,
~
;. +1.5 f--+---1f---f--+- 1;" = 10

= 25'C

I

~

I-

z

"'Uii:

/

.5

8"'

~ -0.5
::J

VCE (sat)
.1

..i!l"'~

------

.05

+.5 1---1----.11---'"

IL

/

.2

.5

COLLECTOR CURRENT (A)

Saturation Voltage
Temperature Coefficients

i"=10

2

.2
Ie -

Saturation Voltages
10

.1

1---I----.1I---t---+----.i'------1

-1.0 1---1----.11---1-1.5 1---+--1f---:;;;I-""=~:;:,

l-

I
~

.02
.01
.05

.1

.2
Ie -

.5

1

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172

-2.5 L - _ . . l - _ - L_ _- ' - _ - ' - _ - ' -_ _- '
.05
.2
.5
.1
Ie -

COLLECTOR CURRENT (A)

TEL. (617) 926-0404 • FAX (617) 924·1235

-2.0 I--::=~......,'F_-_t--f---t_--i

8·9

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

JAN & JANTX 2N2151

Switching Speed
Characteristics

Switching Speed
Characteristics
10

1.0

I 20V.'
Vcc=

--------

.S

1,,=-1 12

Ie -

=10

ISO'

""'uc
0

.,
0

ill

Ii!
u

Ii!
u

.1

"'
;:

:§

"'
;:

.05

:E

i--.5

-.......

...........

Fall time

.2

l.---

t><
~

lS0'C

2S'C
.02

time

2S'C

ill

~
:E

Storage

"uc

.2

~

V

.1
3
COLLECTOR CURRENT (A)

Ie -

.S
Ie -

Thermal Response

.s

.2

...

z

"'~ ~
~~

I- LIJ

0 ..

~~

....

.2

.05 _.02

O.S

f.-

.1

.1

....-

~ I?'
'?

I- .,/"

....-

,/

V ::;::::

Vee = 40VDC

~

....- .....-::

,/

~ ~V

::i..J

.02

:E:E

, . / Single Pulse·
.01

~ ffi
zx

Switching Speed Circuit

....
fa
~
-- ~
~
Duty cycle

1
3
COLLECTOR CURRENT (A)

24V
R1 = - - 111 +1 82

0J..qtl::::::: rill· HJ-C

,-I"

=500

.002
.001
.01 .02 .OS ".1

R .! SV

Pulse width = 2~s
Duty cycle = ~2%
Source Impedance

9 J..c = 3.3'C/W

I ....OOS

V.. =-4VDC
.2

.S

1" 2

5

10 20

50 100 200 SOD 1000

TIME (milliseconds)

UNITROOE • SEMICONDUCTOR PROOUCTS
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JAN, JANTX, & JANTXV 2N2880
JAN, JANTX, & JANTXV 2N3749

POWER TRANSISTORS
5 Amp, 80V, Planar, NPN

FEATURES

OESCRIPTION

•
•
•
•

Unitrode power transistors provide a unique
combination of low saturation voltage, high
gain and fast switching. They are ideally
suited for power supply, pulse amplifier and
similar high efficiency power switching
applications.

Meets MIL-S-19S00/31S
Collector-Base Voltage: llOV
Fast Switching: t,. t f
300nSec max
Low Saturation Voltage: O.2SV max @ lA

=

..

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage, VCBO
....... 1lOV
... SOV
Collector-Emitter Voltage, VCEO
... 8V
Emitter-Base Voltage, VEBO
..................... SA
D.C. Collector Current, Ic ..... .......... .
Power Dissipation
...... 2W
25"C Ambient
lOO"C Case
................... .
.............................. 30W
Operating and Storage Temperature Range
... ......... -6S"C to +200"C

MECHANICAL SPECIFICATIONS
JAN, JANTX, & JANTXV 2N2880

TO-59

FIG 1
' :

EMITTER
•

.•

MILLIMETERS
INCHES
.400-,455
H f7.1-'=--7.'::,--+-=lO=,.1",6-.;-1",1.",,56'--4
.090 .150
2.28 3.81
.320-.468
.570 .763
.318-.380

.055:t
G
H

Note: Collector c:..onnected to case

:81g

.424-.437
.185-.215

1.40 ± :~~1
10.77-11.10
4.70-5.46

JAN, JANTX, & JANTXV 2N3749

TO-111

BASE

INCHES

A .. 400 B .090 C .320 o .570 E .065 F .313 G .070 H .423 J
.135 -

.455
.250
.46B
.763
.090
.318
.090
.438
.215

MILLIMETERS

10.16 - 11.55
2.2B - 6.35
B.l3-II.BB
14.48 - 19.38
1.65 - 2.28
7.95 - B.07
1.77 - 2.2B
10.74 - 11.l2
3.43 - 5.46

nn

SEMICONDUCTOR

~ PRODUCTS

8-11

_UNITRDDE

JAN. JANTX. & JANTXV 2N2880
JAN. JANTX. & JANTXV 2N3749
ELECTRICAL SPECIFICATIONS (at 2S·C unless noted)

TEST

SYMBOL

MIN.

. MAX.

-

-

2071

See Mechanical Data

A-2
A-2
A-2
A-2
A-2

3001
3011
3026
3041
3041

TEST CONDITIONS

Collector-Base Voltage
Collector-Emitter Voltage (1.)
-Emitter-Base Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current

BVCBO
BVCEO
BVEBO
ICEO
ICEX

110
80
B

-

-

100
10

Vde
Vde
Vde
"Ade
"Ade

Collector-Base Cutoff Current
Emitter-Base Cutoff Current

ICBO
lEBO

-

0.4
0.4

f.
Z
0

;:

"":::J
""
0:

III)

2

I

1.0

.2

V
./

~",a\'

1.5

I!!

1.0

iii
i3

u:...

/

T,"=10_

.;v

.5

-

8'"

V

'":::J

-.lc.~

.05

Ie

>"

!

j.....-

--

VIE (sal)

.5

.1

~

/

0:

-.5

i

-1

'"

i==" J).'VcE

1!l-1.5 I - I-

,!. -2.0

.02

/

t>~

___

.-I-- SoC
_550C to '1.

V

It---

I ~ov'y
'l....oC
V,!
_S...oC t~ V
t>-.I .. L..---'
/:>'1.. _
C \0'1:

>r'l.<1

Do

V V

,........

~:7

\0'1:

~~r-r


u
'"0...

u

w

..J
..J

0

u

I

_u

",1

D.C.

.S

.2

Te = 100'C

k

g
"'
z
~

u
:>

.1

0

~

I

2N,3418,20 - 2N3419,21

I

.01

.5

\

u

1"-

'"""

\
\

~

.05
.02

2

~

~'"'\ '\1\

(II..
a"\9

\

~

.~

~~C=l00'CIe

\

5

PUlsl Width 1mS Duty eY~le = 50%

.2

'"

.1
.05

..J

= f::!

.02

__

111

q,

"-),

-

12 -

10

"""

"
~
'I'::::::

" '4"
~

-

..

.01

o

2
5
1020
506080
VeE-COLLECTOR TO EMITTER VOLTAGE

Ie - COLLECTOR CURRENT (AI

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

D.C. Current Gain Vs. Collector Current
180

10

VeE =2V

---

160
TJ

3:

...
z
w

'"'"
...'"0

~

200"C

z
;;:

2.0

"...z

120

'"'"

100

1.0

:>
u

:>
u

w

u

U
ci

W

..J
..J

140

0.5

0

u

2N34~8,20 - 2N3419,21-

I

_u

0.2

I

-

s::.~

40

o
1

-- -- f.--

.05

51020
506080
VeE - COLLECTOR TO EMITTER VOLTAGE (V)

'2N3418, 19

1\

2N3420,21

~O'C\

2S'C

.........

V

60

I~

-

- -

.....

80

20

0.1

V

,,\

~s:-

-

f- -

"- ~

-SS:C~

I-

-'1-

.5

.2

.1

--

2S'C

2

Ie - COLLECTOR CURRENT (AI

Saturation Voltage
Temperature Coefficients

Saturation Voltage
10

~

TJ = 2S'C

;. 1.5

Ie
1'='10

~
~ 1.0 f--j--+--+-+-+

w
VIE (sat)

~
w

.5

..J

.2

""...
0

.01
.005 .01

o
u

~ -.5~-4--+--+-1--4f---4_-VL
~

/"

.1

. 02

......

w

L

>
.05

!::! +.5 f--j--'-

-----

~
,02

.05

.1

.2

."'
Ci

IX -.1.--.....=c,

,.../

-1.5 f---f_-L

l-

I

~

1-""'f'=J--+-f---+--+--""-....
.01

.5

.02

.05

.1

.5

Ie - COLLECTOR CURRENT (AI

Ie - COLLECTOR CURRENT (A)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL (617) 926·0404 • FAX (617) 924·12.5

-.2

8-17

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N3418-2N3421

Switching Speed
Characteristics

Switching Speed
Characteristics
10

Vee = 20V

Vee ]20V

.5

1
Ie -

1"=11"=10

~

."

c:

k::-----+

.2

8

t rise 150'C '--c::;;!..£.-t--"I

~:
e

~

§

g

.1

'"

.05

:;;

fii1)

Storaee ti

.5

;::

• JSo,c_

Fall time t f 150

""-

0

'1
.02

.2
Fall time t f 25

.01

2
Ie -

.5

1
Ie - COLLECTOR CURRENT (A)

COLLECTOR CURRENT (A)

----

Switching Speed Circuit

Thermal Response
01

.5

d.5
0.2

IZ

'"cn~

.2

C2(5
1-",

.1

Zz

Co..

"':;;
!::!-

........
««
:;;:;;

~

116V
- lV

,/

r---lo--4~1Vv\'~--~--~

J

.01
9 J_C !tl

II~=-

j-20.3Vde

~ /
o.~
~ingle Pulse
.02 ....... 1/"
.05

0:0:

0",
zJ:

-o;.!-

-I--

-:::::;- :::;?

;?

0

I

.1

.5

I---

r~~_ k

.005

flJ . e

= r lfl

= 6.7'C/W

il I

.002

L

Pulse width
2,us
Duty cycle::: ----; 2%
Source Impedance
-- 50~!

• BJ-C

I

-6.4Vde

.001
.01 .02 .05.1

.2

.5

1

2

5 10 20

50 100 200 SOO 1000

TIME (milliseconds)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (517) 925·0404· FAX (517) 924·1235

8-18

PRINTED IN U.S.A.

POWER TRANSISTORS

JAN,
JAN,
JAN,
JAN,

5 Amp, BOV, Planar NPN

JANTX,
JANTX,
JANTX,
JANTX,

& JANTXV 2N3996
& JANTXV 2N3997
& JANTXV 2N3998
& JANTXV 2N3999

DESCRIPTION
Unitrode power transistors provide a
unique combination of low saturation
voltage, high gain and fast switching. They
are ideally suited for power supply pulse
amplifier and similar high efficiency'power
switching applications.

FEATURES
,; Meets MIL-S-19S00/374'
• Collector-Base Voltage:iUp to 100V
• D_C. Collector Current: SA
• Fast Switching
o Beta Guaranteed at 3 Current Levels

ABSOLUTE MAXIMUM RATINGS

Collector-Base Voltage, VCBO .
.. .................................................................................. 100V
Collector-Emitter Voltage, VCER
.................................................................................... SOV
Emitter-Base Voltage, VEBO .......
.. ........................................................................................... SV
D.C. Collector Current, I" .......... .........................................................
.. ...................... 5A
Peak Collector Current, Ic...............................................
..................................................... lOA
Power Dissipation
25·C Ambient ..................
.............................
.. ............... 2W
lOO·C Case ........
.. .................................................................. 30W
· Operating and Storage Temperature Range ...................................................-6S·C to 200·C

MECHANICAL SPECIFICATIONS
JAN, JANTX, & JANTXV 2N3996, 2N3997

INCHES
A
B

C
D
E
F

G
H
J

'.400
.090
.320
.570
.065
.313
.070
.423
.135

-

.455
.250
.468
.763
.090
.318
.090
.438
.215

MILLIMETERS

10.16
2.28
8.13
14.48
1.65
7.95
1.77
10.74
3.43

-

11.55
6.35
11.88
19.38
2.28
8.07
2.28
11.12
5.46

JAN, JANTX, & JANTXV 2N3998, 2N3999

INCHES
.400-.455
.090-.150
.320-.468
.570 .763
.318 .380
.055 ±

Note: Collector connected to case

:8tg

.424-.437
.185-.215

TO-111

TO-59

~

MILLIMETERS
10.16-11.56
2.2B 3.81
8.13-11.88
14.48 19.38
8.07 9.65

1.40 ± j~1
10.77-11.10
4.70-5.46

nn

L::::::J
8-19

SEMICONDUCTOR
PRODUCTS

_UNITRDDE

JAN, JANTX, & JANTXV 2N3996, 2N3997, 2N399S,2N3999
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)t
2N3996*
2N399S"

2N3997*
2N3999"

Test

Symbol

Min.

Max.

Min.

Max.

Units

D.C. Current Gain
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain, -SSOC (Note 1)
Collector Saturation Voltage (Note 1)
Collector Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)
Coliector·Emitter Breakdown Voltage
(Note 1)
Emitter·Base Cutoff Current
Emitter·Base Cutoff Current
Collector Cutoff Current
Collector Cutoff Cu rrent
Collector Cutoff Current, lS00C
Collector Capacitance
A.C. Current Gain (High Frequency)

hFE
hFE
hFE
hFE
VCE(sat)
VeE (sat)
VeE (sat)
VBE(sat)
BVeEo

30
40
lS
10

-

60
SO
20
20

-

-

Switching Speeds

Turn-on Time
Turn-off Time

Isolation Resistance (2N3996, 7 only)

lEBO
lEBO
ICES
leEo
ICES
Cob
hFE
ton
toll
Rlso

-

120

-

-

240

-

-

-

0.2S
2
1.2
1.6

80

-

80

-

V
V
V
V
V

-

-

-

0.2
10
S
10
SO
lS0

0.2
10
S
10
SO
lS0

4

-

4

-

I'A
I'A
I'A
",A
,..A
pi

-

0.3
1.S

-

-

10'

0.6

-

-

-

1()9

0.6

-

-

0.2S
2
1.2
1.6

-

Test Conditions
Ic
Ic
Ic
Ic
Ic
Ie
Ie
Ic
Ie

= SOmA, VCE = 2V
= lA, VCE = 2V
= SA, VCE = SV
= lA, VCE = 2V
= lA, Ie = 100mA
= SA, Ie = SOOmA
= lA, Ie = 100m A
= SA, IB = SOOmA
= SOmA, IB = 0

-

VBE = SV, Ie = 0
VBE = 8V, Ie = 0
VCE = 90V, RBE = 0
VeE = 60V. 18 = 0
VCE = 90, RBE = 0
VCB = 10V, IE = 0, I
Ic = lA, VeE = SV, I

0.3
2

,..5
,..5

Ic = lA
Ib1 = 100mA, Ib2

-

Q

= 1MHz
= 10MHz

= -l00mA

Notes: * Also applicable to JAN and JANTX versions.
1. Pulse width = 300"S; duty cycle .. 2%
t All values in this table are JEDEC registered.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

8·20

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N3996, 2N3997, 2N3998, 2N3999

Unclamped Reverse Bias
Second Breakdown

Forward Bias
Safe Operating Area
10

~

g

~

u
I

C"-

~U~/;~Ie=

~

::>
'"u
'"~

.5

\l \
\

~ Tc=lDO°C

"'"50% - N

D.C.

>-

10

t,-0.5m,

/

.......

,

~

~

.~

Duty Cycle = 10% -

\

~"

X"

.2

2

g

"- ~

u

.2

:::>

.1

>u

.1

0

'"

",

qsv

",I'-- r---...
I'--

.05

I'-

.02

.01

.01
10
V~

80 100

50

20

I"'---

"- '91-

...J

.02

~,I0.0

.,~ ~

~

-" .05

o
Ie -

- COLLECTOR TO EMITTER VOLTAGE (V)

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

COLLECTOR CURRENT (A),

D.C. Current Gain

2N3996-2N3998

20

500

I

I

VeE = SV

10
200

~

.....-

z

>-

Z

OJ

a:
a:

TJ

~

"z">- 100

200"C

:::>
u

UJ

a:
a:

a:

~

:::>
u
u

o

I

I

.r:~

...J
...J

50

0

u

_0

Ie

= 10

I

\~/'

['\

OJ

= l00'C

Te

lB. = -112

\ 1,\

.5

z
«

I

20

V

...........

TJ= 150'C

1 ..J.

"-

"..- ";."J ~25'CI

...........

.....- ~~-55!C

--... ..............

-

..........

~

~~

~

.5
10
5

.2

1

2
VeE -

10

20

50

.01

80

.02

.05

.1

.2

.5

1

2

5

10

Ie-COLLECTOR CURRENT (A)

COLLECTOR TO EMITTER VOLTAGE

D.C. Current Gain

2N3997-2N3999

Saturation Voltage

soo

z

""z
>-

10

200
100

/" V

UJ

a:
a:
:::>
u
U
ci

I

~

/'

so

/

I

Lc

lJ
1-1
I
TJ=25'C

TJ =25"C

VcE =5V

UJ

"

~

V V""JTJ =

I"--- r---....

20

~

.c

g
z
o

~
1"-'

~

:::>

~

10

.01

.05
Ie -

.1

.2

.5

1

2

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA02172
TEL. (617) 926.Q4()4 • FAX (617) 924·1235

1/

.5

.2
VeE (sat)

1

.05

-- --

.01
.01

10

COLLECTOR CURRENT (A)

.02

/'

,/'

/

V

.05.1
Ie -

8-21

.JV

VIE (sat)

1.0

.02

.02

/

1'=10

2

r--.

~55'Cr--. '" :\
'" '\

V-

I

Ie

.2

.5

1

2

10

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N3996, 2N3997, 2N3993, 2N3999

Saturation Voltage
Temperature Coefficients

Switching Speed
Characteristics

2

?

;;
~
~

~=10
I,

1.5
1.0

: ~ ,-'e

/!_55'C\0/

OJ

"'"

'tI

s:zD~y
~o ~

t>',.

-1

n.
::; -1.S

I
~

7

/

55'C to 25'C

b,'Ic.-

OJ

Vee=20V

r-- 11I=lu=lo
Ie

.5

,/"

....... V

......

~~

f.:;:: ~ , /

~ ~V
/

0J_CIII ='11,-

Single Pulse

ZJ:

b--::-:

OJ-C,

BJ-C = 3.3'C/W

.002
.1
2
Ie -

.001
.01 .02 .05 .1

10

5

COLLECTOR CURRENT (A)

.2

.5

1

2

5

10 20

SO 100 200 5001000

TIME (milliseconds)

Switching Speed Circuit
+20_3Vde

20n

j

16V

n~__--'1'1\f\r-_"'_-I
L

-IVJ

Pulse width
2,us
Duty cycle = ':"'~ 2%
Source Impedance
:- Sm!

-6.4Vde
NOTES.

=

1. Ie 1=::: lA, lSI = -182
IOOmA
2. The values of COllector current and base
current are nominal. The actual values will
vary slightly with transistor parameters.

UNITRODE • SEMICONDUCTOR PRODUCTS

580 PLEASANT STREET· WATERTOWN. MA 02172
TEL (617) 926-0404· FAX (617) 924-1235

8-22

PRINTED IN U.S.A.

POWER TRANSISTORS

JAN, JANTX & JANTXV 2N4150

10 Amp, 70V, Planar NPN

FEATURES
• Meets MIL-S-19S00/394
• Collector-Base Voltage: up to lOOV
• Peak Collector Current: lOA
• Fast Switching
• Low Saturation Voltage

DESCRIPTION
Unitrode power transistors provide a
unique combination of low saturation
voltage, high gain and fast switching. They
are ideally suited for power supply pulse
amplifier and similar high efficiency power
switching applications.
BACKSID[COLlECTOR

IHI~~~SS

M~tl~~~:r

00"

•

ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage, VeBo ............................ .....................
.. .................................. IOOV
Collector-Emitter Voltage, VCEO .............................••.........................••......................•........•.•...... 70V
Emitter-Base Voltage, VEBO ............................................................................................................ 7V
Peak Collector Current, Ie .......................................................................................................... lOA
Power Dissipation
2S·C Ambient ...................................................................................... l.SW
lOO·C Case .............................................................................................. SW
Operating and Storage Temperature Range .................................................... -6S·C to 200·C

MECHANICAL SPECIFICATIONS
JAN, JANTX & JANTXV 2N4150

01
~~I
I
TiI- ._.1r-__. ..
. .
fo-c-r:

E

ili
-+- _. _ . . .

0
BASE

.010-.030

A

F

INCHES
.335-.370
.305-.335
.240-.260
1.5 MIN.
.017 ±

G

H

:gg~

MILLIMETERS
8.51-9.40
7.75-8.51

6.09-6.60
38.10 MIN.

.254-.762
.432 ±

:g~~

.200

5.08

.100

2.54
.78Jt.076
.736-1.14
2.54

.031:1:.003

.029-.045
.100

TO·5

nn

SEMICONDUCTOR

~ PRODUCTS

8-23

_UNITRDDE

JAN', JAN-TX & JANTXV 2N4l50
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

Test

Symbol

Min.

Max.

MIL-STD-7SO

/394
Sub
Units group Method

Visual and Mechanical

A-I

2071

Test conditions

See Mechanical Data

25'C

-

Vdc

A-2

3001

Ic = 10uAdc; Cond_ D

Vdc

A-2

3011

Ic = OJAdc; Cond_ D

Vdc

A-2

3026

IE"" 10uAdc; Cond_ D

10

.. Adc

A-2

3041

VCE = 60Vdc; Condo D

-

10

IIAdc

A-2

3041

VCE = 100Vdc, VEB = 0.5Vdc; Condo A

pAdc

A-2

3036

Vc , = 80Vdc; Condo D

lEBO

-

0.1
OJ

pAdc

A-2

3061

V" = 5Vdc; Condo D

120

A-3

Ic = 5Adc, VCE = 5Vdc

-

-

3076

A-3

3076

Ic = lOAdc, VCE = 5Vdc

A-3

3076

Ic = 1Adc, VCE = 5Vdc

Vdc

A-4

3071

Ic = 5Adc, I, = O.SA~.c

2.5

Vdc

A-4

3071

Ic = lOAdc, I, =c= 1Adc

Collector-Base Breakdown Voltage

BVc,o

100

Collector-Emitter Breakdown Voltage (Note 1)

BVCEO

70

Emitter-Base Breakdown Voltage

BVE,o

7

Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
D.C_ Current Gain (Note 1)

'CEO
ICEX
'c,o

-

hFE

40

D.C. Current Gain (Note 1)

hFE

10

D.C. Current Ga i n (Note 1)

hFE

50

Collector Saturation Voltage (Note 1)

VCE (sat)

0.6

Collector Saturation Voltage (Note 1)

VCE (sat)

Base Saturation Voltage (Note 1)

V'E (sat)

-

1.S

Vdc

A-4

3066

Ie = 5Adc, I, = O.SAdc; Condo A

Base Saturation Voltage (Note 1)

V" (sat)

-

2.5

Vdc

A-4

3066

Ic = lOAdc, I, = 1Adc; Condo A
Ic = SOmAdc, VCE = 5Vdc; f'= 1KHz

A.C. Current Gain

hr.

40

160

-

A-4

3206

Gain-Bandwidth Product

fT

IS

75

MHz

A-4

3306

Ic = 0.2Adc, VCE = lOVdc, f =10 MHz

Output Capacitance

C~b

-

350

pf

A-4

3236

Vc,·= 10Vdc, IE = O,f = 1MHz

°J_C

-

20

oc/w

C-1

31S1

Delay Time

td

-

50

ns

A-4

-

Rise Time

t,

-

500

ns

A-4

-

Storage Time

t,

-

1.5

ps

A-4

Fall Time

tr

-

SOO

ns

A-4

-

Adc

B-6

300S

VeE = 1Vdc, t=: QOSec,

mAdc B-6

300S

VCE = 70Vdc, t = 60Sec,

mj

B-7

-

Ic = SAdc, L = 1mh

Thermal Resistance

Switching
Speeds

100'C

~

Vce = 20V
Ic =5A
I" = I", '" = O.5A

Forward-Biased Second Breakdown

lsi,

S

Forward-Biased Second Breakdown

's/,

70

Unclamped Reverse Biased Second Breakdown

Esl,

12.S

-

Clamped Reverse Biased Second Breakdown

Esl,

SOO

-

mj

B-8

-

Ie = SAdc, L = 40mh, V,"mp = 70V

'CEX

-

100

/lAdc

A-S

3041

VCE = 80Vdc, Ii" ~ 0.5Vdc, Condo A

hFE

20

-

-

A-5

3076

Ic = 5Adc, VCE = SVdc

150'C
Collector-Emitter Cutoff Current
-55'C
: D.C. Current Gain (Note 1)
Note:
1. Pulse width = 300..5; duty cycle S2%.

UNITRODE • SEMICONDUCTOR PRODUCTS·
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

8-24

PRINTED IN U.S.A.

JAN. JANTX & JANTXV 2N4150

Unclamped Reverse Bias
Second Breakdown

Forward Bias
Safe Operating Area
10
S

:$

2

I-

~

Z

.~

DCI

W

0:
0:

:l

0:
0

I-

u

w .2

..I
..I

0

~

\\ \

.!!

~~

C

~

.1

u

I'in

lOOtl-Sec, 10% Duty Cycle /

~.OS

\

1\

I

~ Duty Cycle

~'"

~ / ~'" ~
Ims~c. 10% D~ty Cycl~
~

.S

U

10

~"- ~ /~opSec.

gw

'.1

['\..

'"

z

z
I

r+--

I'\.

;: .2
u
:l
C .1

i""-

......... ~ase ope'n

\

.5

.05

1'1'\.

'" v,!=10.5t
i'k

"- V,,~-.!4V l"I'--- r-....
r-..

..I

.02

f-

.02

T, = 10D'C

I

.01
1

.01

2
VeE -

S

10

20

50 70

o

2

COLLECTOR TO EMITTER VOLTAGE (VI

3

Ie -

4

8

•

10

D.C. Current Gain

20.---'---~r---r---.---~r-'-'

500

L=st

10r---~-----+----1_--4_----_r~~

:$

z

200

100

:l

;;:
~
z
W

0:2r---~-----+----1_--4_----_r~~

~.

:l

50

8

I

~ s~--+----_+----I_--+----_+_t__i
0:
0:

u

0:
0:

u

rj

ci

..I

I

9

COLLECTOR CURRENT (AI

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

.!!

-

I

\

u

ITe ~ 10J.C I
= -liz = 'CliO

20

IJ/ f.~J=2l.:s- I--

-.~

-......

~~!~c-

1\
r--

.Sr---~-----+--~I_--4_----_r~~

10

.2 L...-_L...-_--'-_--'-_--'-_ _-'-....L....J
1
1020
SO 70

5
.01

:02

.OS
Ie -

VeE-COLLECTOR TO EMITTER VOLTAGE (V)

10

10

2

2

_

P
1.5
.s

,Ji=2Slc
18=

'C/ID

~

10

~5'C 10 lSO lC,,/ V

III

I-

-

VIEISATI

~
w .S

CJ

.2

>
.1

~

.05
.02
.01
.01

lell,

:>

2

~

.2.5

Saturation Voltage
Temperature Coefficients

Saturation Voltages

0

.1

COLLECTOR CURRENT (AI

V

W

........

(3

.S

LL

V

-6Ve~

0

/

et:: -.5
:l

.~

w
l-

I

l::!.V 1E
-2

.0S.1
Ie -

.2

.S

1

2

5

-2.S
.01

10

UNITRODE ' SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET, WATERTOWN. MA 02172
TEL. (617) 926·0404 ' FAX (617) 924·1235

.02

--

8·25

/

/'

fS~ r---

V

.05.1

Ie -

COLLECTOR CURRENT (AI

~

"'C to 150'C

-1

~-1.5

>

...t

!-5S'C to 25'C

U
W



1\

\

1 11

I

g

....
ili
c:

"I

.1

.E

,05

r-

lOOpS
_
Duty Cycle =10%

I

~

1,\

I I

r-..

'\

\

i\

::

--'-_--'-------'----'-_-'--12_N...L~6_60-,1-,-12_N5_66---,1I

LI

I

10 20
50 100 200 300
Va; - COLLECTOR TO EMITIER VOLTAGE M

10 20
50 100 200 300
VeE - COLLECTOR TO EMITIER VOLTAGE (V)

Unclamped Reverse Bias
Second Breakdown

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

10

.
.~
c

10

T. =2S'C

0

2

~

"-

.5

;: .2
o
.1

"~

'"
0:

~'--0.5V

~
~
"'-------v" _

.05
.02
.01

o

.5

1

5'"

2N5661,63

oJ

_u

.02
.01
1

2

10

Vc' -

20

50

D.C. Current Gain
2N5661, 2N5663
1000

Vc ,=5V

Vc,=5V
500

500
Z200

200

I -r-- 150'C

" 100

l<

50

;;:

f"'..,

2S'C

0:
OJ

~

1

SS'C

20

'" 100 rI-

Z

"' ~

::: 50
0:
OJ

~

\~

ci

I

100 200300

COLLECTOR·EMITTER VOLTAGE (V)

D.C. Current Gain
2N5660, 2N5662
1000

:::

....

"1·05

Ic-COLLECTOR CURRENT (A)

z
;;:

-

.1

2

1.5

2rS660'162- ~

0:

§ .2

-4V

oJ

1

0:

~ .5

--

:!:

2

I-

Z

~

5
I

5

"i', ~

~

g
o
z'"

T= 100'C

'.1 =-112=
Ic/lO
I·

\,

10

20

ci

I
:l!

.c

-

.........

150'C

I-

I- -

"-

2~'C

-SS'C

10

l'\
"~

~

5

\
2

2

1

.01 .02

.05
Ic -

.1

.2

.5

1

2

.01

10

COLLECTOR CURRENT (A)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

.02

.05
Ic -

8-30

.1

.2.5

2

5

10

COLLECTOR CURRENT (A)

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N5660

JAN, JANTX, & JANTXV 2N5661

JAN, JANTX, & JANTXV 2N5662

JAN, JANTX, & JANTXV 2N5663

Saturation Voltage
Temperature Coefficients

Saturation Voltages

_ +2

~J =2slc

>+1.5

oS

2

VIEI I.=I C/5

I--

-

[!? +1
zOJ

J

~

I

/

/

ii:

/

VeE' '. = 'CliO

I

-

.05
.01

f,--

/'

~~

dVeE

u.

8'"

r-

:>

-1

::;; -1.5

'"

l,..-/ , /

I

~IE'I'7Ie"l

r-

-2

~

11 VIE

I--"

-2.5
.01

10

.05 .1
.2.5
2
Ie - COLLECTOR CURRENT (A)

.02

Vee _100V

'.=

.5

'CliO

.

"<=...
...~
g
0

'"::;:i=

.2
.1
.05

t::::: -...

Rise Time, tr

~ ...........

,..;-

- :::r-

..........
Oelay Time, t;--=

~

7

10

/
-;;;

/

"...<=
~
.2
0

/25'C

~--Tim~

2

'"

::;:

i=

25'C

rwc

.5

150'C

-- ==

------

I-storage

oS

i"--

r--.-...

K

-:.-

Fall Time, I,
.2

lSO'C

.02

10

Switching Speed
Characteristics

Switching Speed
Characteristics
1.0

1/ /
V

~ -:::-SS'C 10 2S'C

l-

.2
.5
1
2
.05 .1
Ie - COLLECTOR CURRENT (A)

.02

2S'C 10 150'C/

Q,

V

V

Sr C 1012S'C

~ -.5

~

V

2S'C to IS0'C

+.5

(j

OJ

.2
.1

le/ i.';;10

!;'

.01

2S'C

L

>

-------

.1
.2

.5
1
.Ie-COLLECTOR CURRENT (A)

.2

2

.5
Ie - COLLECTOR CURRENT (A)

Thermal Response

Switching Speed Circuits

.5
Tektronix
S41AOI'

Equivalent

IZ

'"

iii'"
zu

"" z

"'''''
o ~

.2

.1

1-0

~~
~~
::;:::;;

Tektronix

541Aar

Equivalent

.05

.02

g"''''~ .01
IIi2 .005

- -~
--

Duly Cycle

0.5

.!

~ i-"

~
~

~
.01/ '/

--::
....-::: f?~

/.

7

1t'

VV

--=i;;;iiii'''''''

~I"'"

= r(I)-~:T
9 J •c = 5.0°C/ w
f~r 2N1S66f' 2rS66f

8 J •e (l)

.L

- 6.7 C/w
for 2NS662, 2N5663

flJ _e

Single Pulse

.002

-.v

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

.001
.01 .02 .05 .1

8-31

.2

.5 1 2
5 10 20
TIME (milliseconds)

50 100 200 500 1000

PRINTED IN U.S.A.

lEI

POWER TRANSISTORS

JAN,
JAN,
JAN,
JAN,

5 Amp, 300V, Planar NPN

JANTX,
JANTX,
JANTX,
JANTX,

FEATURES
• Meets Mll-S-I9500/4SS
• Collector-Base Voltage: up to 400V
• D.C. Collector Current: 5A
• Peak Collector Current:IOA .
• Fast Switching

DESCRIPTION
Unitrode high voltage transistors provide
a unique combination of low saturation
voltage, fast switching, and excellent gain.
They are ideally suited for off-line power
supply designs and other applications
where the increased voltage rating adds
to system reliability.

BACKSIDECOLtECTOR

TH~~~ESS

M~f"'.'~.'.',~gN

""'"

gg!~

u

JAN, JANTX,

ABSOLUTE MAXIMUM RATINGS

& JANTXV 2N5664
& JANTXV 2N5665
& JANTXV 2N5666
& JANTXV 2N5667

JAN" JANTX,
& JANTXV

JAN, JANTX,

JAN, JANTX,

& JANTXV

& JANTXV

& JANTXV

2N5664

2N5665

2N5666

2N5667

Collector-Base Voltage, VeBo ..........................
2SOV
....... 4~OV.......
.............. 250V.......
. ........ 400V
Collector-Emitter Voltage, VeEO ...................................................... 200V ................................ 300V .................... ,........... 200V................................ 300V
Emitter-Base Voltage, VEBO .................................................................. 6V .................................... 6V......,............................. 6V.................................... 6V
D.C. Collector Current, Ie .................................................................... 5A.................................... SA .................................... 5A ................................... 5A
Peak Collector Current, Ie ......,: ...,.................................................... lOA.................................. IOA. ................................. lOA ................................. lOA
Power Dissipation
.
25'C Ambient ............................................ 2.5W ................................ 2.5W................................ I.2W................................ I.2W
lOO'C Case .............. . .............................. 30W ................................. 30IN................................. lSW................ .-.: ............. 15W
Operating and Storage Temperature Range ............................................................:.......................-65·C to 200'C ............. :..................................... .

MECHANICAL SPECIFICATIONS
JAN, JANTX, & JANTXV 2N5664 . JAN, JANTX, & JANTXV 2N5665

TO-66

H
BASE
EMITTER

A
B

C
0
E
F
G
H
J

K
L
M

JAN, JANTX, & JANTXV 2N5666

·c

T

0

[
r=t=~rE
."
B

--

- . -.

'.

F

JAN, JANTX, & JANTXV 2N5667

l'

j--!---T~-'-- -:- - -

INCHE5
MILLIMETERS
.620 MAX.
15.75 MAX .
1.27 - 1.90
.050 - .075
.250 - .340
6.35 - 8.63
.360 MIN.
9.14 MIN .
.711 - .863
.028 .034DIA .
24.33 - 24.43
.958 - .962
14.47 - 14.98
.570 - .590
.145 MAX. RAD.
3.68 MAX. RAD.
.142 - .152 DIA. 3.60 - 3.86 DIA .
8.89 MAX. RAD.
.350 MAX. RAD.
4.82 - 5.33
.190 - .210
2.36 - 2.72
.093 - .107

INCHES
.335-.370
.305-.335

.240-.260
0
E
F

G

1.5 MIN.

TO-5

MILLIMETERS
8.51-9.40

7.75-8.51
6.09-6.60
38.10 MIN.

.010-.030

.254-.762

.0"17 ± :gg~

.432:1:

.200
.100

:g~~

.

5.08

.D3H.OD3
.029 .045
.100

2.54
.787:1:.076
.736-1.14
2.54

n
n
L.::2J
8-32

SEMICONDUCTOR
PRODUCTS

.... UNITRDDE

ELECTRICAL SPECIFICATIONS (at 25-C unless noted)
2N5664 2N5666

JAN, JANTX, & JANTXV 2NS664

JAN, JANTX, & JANTXV 2N5666

JAN, JANTX, & JANTXV 2NS66S

JAN, JANTX,& JANTXV 2NS667

1455
Test

Symbol

Min.

Max.

Units

Visual and mechanical

MIL-STD-750

Sub
group Method

A-I

Test conditions

2071

See Mechanical Data

25'C
Collector-Emitter Breakdown Voltage (Note 1)

BV CER *

2S0

-

Vdc

A-2

3011

Ie = 10mAdc; R" = 100 !!, Condo B

Collector-Emitter Breakdown Voltage (Note 1)

BVCEO *

200

-

Vdc

A-2

3011

Ie = lOmAdc; Condo D

Emitter-Base Breakdown Voltage

BV EBO *

6.0

-

Vdc

A-2

3026

I, = 10pAdc; Condo D

Collector-Emitter Cutoff Current

I cts

-

0.2

pAdc

A-2

3041

VeE = 200Vdc; Condo C

Collector-Base Cutoff Current

IC80

-

0.1

pAdc

A·2

3036

Ve• = 200Vdc; Condo D

Collector-Base Cutoff Current

Icso

-

1.0

mAdc A-2

3036

Ve• = 2S0Vdc; Condo D

h *

40

-

-

A-3

3076

Ie = O.SAdc. VeE = 2Vdc

h *

40

120

-

A-3

3076

Ie = 1Adc, VeE = SVdc

IS

-

-

A-3

3076

Ie = 3Adc, V0< = SVdc

5

-

-

A-3

3076

D.C. Current Gain (Note 1)

D.C. Current Gain (Note 1)

"
"
h *
"

Ie

= SAdc, Vo< =

Collector Satur~tion Voltage (Note 1)

VeE (sat)*

-

0.4

Vdc

A-3

3071

Ie

= 3Adc,

Collector Saturation Voltage (Note 1)

Vco (sat)

-

1.0

Vdc

A-3

3071

Ie = SAdc,

V" (sat)*

-

1.2

Vdc

A-3

3066

Ie = 3Adc, I. = 0.3Adc; Condo A

V" (satl'
1*
r

-

1.S

Vdc

A-3

3066

Ie

20

70

MHz

A-4

3306

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)

Base Saturation Voltage (Note 1)
Base Saturation Voltage (Note 1)
Gain-Bandwith Product

h"

Output Capacitance

C,o

Thermal Resistance

II

pi

J-e

-

2NS664
2NS666
Switching Speeds

120

-

Turn-on Time

t on *

Turn-off Time

tOil *

3.3

A-4

3236

C-1

3151

=- SAdc,

SVdc

= 0.3Adc
I. = 1Adc
I.

I. = 1Adc; Condo A

= O.SAdc, VeE = SVdc, 1= 10MHz
Ve• = 10Vqc, I, = 0, 1= 1MHz
Ie

°C/W

-

6.7

-

0.2S

ps

A-4

1.5

ps

A-4

-

°C/W
Ie

= 1Adc

100'C
Forward Biased Second Breakdown
2NS664

2NS666

=

S

-

Adc

B-6

3051

Vco = 6Vdc, t

Is/.

O.7S

Adc

B-6

30S1

VeE = 40Vdc, t = lsec

Is/.

43

Is/.

5

-

I

I

'/0

s/.

.

0.4

Unclamped Reverse Biased Second Breakdown E

0.81

-

Clamped Reverse Biased Second Breakdown

E

500

-

I

-

100

IS

-

I

'/0

s/.

s/.

27

lsec

mAdc B-6

30S1

VeE = 200Vdc, t = lsec

Adc

B-7

30S1

Vco = 3Vdc, t = lsec

Adc

B-7

30S1

VeE = 37.SVdc, t

mAdc B-7

3051

VeE = 200Vdc, t = 1sec

=

lsec

mj

B-8

30S3

Ie

=5Adc, L = .065mh

mj

B-9

30S3

Ie

= SAdc, L =

pAdc

A-S

3041

VeE

-

A-6

3076

Ie

4~h, V".mp

=

200V

lS0'C
Collector-Emitter Cutoff Current

eEl

= 200Vdc, Condo C

-6S'C
D.C. Current Gain (Note 1)

h

"

-= 1Adc, Vco =

SVdc

Noles:

1. Pulse width = 300pS; duty cycle $2% .
• Those parameters marked with a • are JEDEC registered and devices meeting these specifications are available as commercial 2N devices.

UNITROOE • SEMICONOUCTOR PROOUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·12::15

8-33

PRINTED IN U.S.A.

•

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
2N5665 2N5667
Test

Symbol

Min.

JAN, JANTX, & JANTXV 2N5664

JAN, JANTX, & JANTXV 2N5666

JAN, JANTX, & JANTXV 2N5665

JAN, JANTX, & JANTXV 2N5667

Max.

Units

Visual and mechanical

1455
Sub
group Method

A-I

25'C

··
·

Collector-Emitter Breakdown Voltage (Note 1)

BV CER

400

Collector-Emitter Breakdown Voltage (Note 1)

BV eEO

300

Emitter-Base Breakdown Voltage

BV"o

M I L-STO-750

Test conditions

2071

See Mechanical Data

-

Vdc

A-2

3011

Ie

Vdc

A-2

3011

Ie

= 10mAdc; R" = 10011, Cond_
= 10mAdc; Cond_ D
= 10pAdc; Cond_ D

Vdc

A-2

3026

I,

Collector-Emitter Cutoff Current

ICES

-

0.2

.pAdc

A-2

3041

VeE =. 300Vdc; Condo C

Collector-Base Cutoff Current

leBo

-

0.1

pAdc

A-2

3036

Ve• = 300Vdc; Condo D

COllector-Base Cutoff Current

leBo

-

1.0

mAdc A-2

3036

Ve• = 400Vdc; Condo D

D.C. Current Gain (Note 1)

hFE*

25

-

3076

Ie

hft

25

75

A-3

3076

Ie

n.C. Cllrr,=,nt

h

15

-

1\.-3

3076

Ie = 3Adc, Vc< = lOVdc

5

-

-

A-3

D.C. Current Gain (Note 1)

A-3

3076

Ie

-

0.4

Vdc

A-3

3071

Ie

G~in

(Note 1)

•

"FE

6

D.C. Current Gain (Note 1)

h"

Collector Saturation Voltage (Note 1)

VeE (sat)'

Collector Saturation Voltage (Note 1)

VeE (sat)

-

1.0

Vdc

A-3

3071

Base Saturation Voltage (Note 1)

V" (sat)'

-

1.2

Vdc

A-3

3066

Base Saturation Voltage (Note 1)

V" (sat)
f*
T

-

1.5

Vdc

A-3

3066

Gain-Bandwith Product

20

70

MHz

A-4

3306

Output Capacitance

C'b

-

120

Thermal Resistance

-

2N5665
2N5667
Switching Speeds

pf

°J_C

3.3

A-4

3236

C-l

3151

= 0.5Adc, VeE = 2Vdc
= lAdc, VeE = 5Vdc

= 5Adc, VeE = 5Vdc'
= 3Adc, I, = 0.6Adc
Ie = 5Adc, I, = lAdc
Ie = 3Adc, I. = 0.6Adc; Condo A
Ie = 5Adc, I. = lAdc; Condo A
Ie = O.5Adc, VeE = 5Vdc, f = lOMHz
Ve• = lOVdc, IE = 0, f = IMHz

'C/W

-

6.7

Turn-on time

t~·

-

0.25

P.s

A'4

-

Turn-off time

tOil

-

2.0

ps

A-4

-

.

B

'C/W
Ie

=

1Adc

lWC
Forward Biased Second Breakdown
2N5665

'5/.

5

-

Adc

B-6

3051

VeE

IS/I

0.75

-

Adc

B-6

3051

Ve,

=

6Vdc, t

== Isec

=40Vdc, t = 1 sec
VeE = 300Vdc, t = Isec
VeE = 3Vdc, t = 1sec
VeE = 37.5Vdc, t = Isec
VeE = 300Vdc, t = Isec

I SIB

21

-

mAdc

B~6

3051

IS/B

5

-

Adc

B-7

3051

I SIB

0.4

-

Adc

B-7

3051

IS/B

14

-

mAdc B-7

3051

Unclamped Reverse Biased Second Breakdown ESt.

0.81

mj

B-8

3053

Ic = 5Adc, L = .065mh

Clamped Reverse Biased Second Breakdown

ESt.

500

-

mj

B-9

3053

Ie

ICES

-

100

pAdc

A-5

3041

VCE = 300Vdc, Condo C

-

A-6

3076

Ie

2N5667

= 5Adc, L = 40mh, V" ... = 300V

150'C
Collector-Emitter' Cutoff Current
-65'C
D.C. Current Gain (Note 1)

h"

10

-

= lAdc, Veo = 5Vdc

Notes:

1. Pulse width = 300pS; duty cycle :s2%.
• Those parameters marked with a • are JEDEC registered and devices meeting these specifications are available as commercial 2N devices.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

8-34

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N5664 JAN, JANTX, & JANTXV 2N5666
JAN, JANTX, & JANTXV 2N5665 JAN, JANTX, & JANTXV 2N5667

Forward Bias
Safe Operating Area

Forward Bias
Safe Operating Area

2N5666, 2N5667

2N5664, 2N5665
10

~

"r\.

$
....

~

D.C.

:::>

.5

'-'

Tc = lOooe

'\

I\..

'\.

f-/
.2
t = lOOps
r- Duty Cycle = 10% - f-/
.1

'"0

~

::i

tp= Ims
Duty Cycle

_

=10%

p

0

'-'

10

~
V

i'"

lI'\

K

a

r\

.5

~2

8

.1

Duty Cycle

~

t,= 100",
_
Duty Cycle = 10%

.02
2N5666

.01
10

20

50

1

100 200 300

10

10

IB1=-ln=lc/lo

~

~

~"

.5

~

u

z

~

.2

c

.1

I

.05

~

I

~
i'-..

~

'"~
"'"

~

r----

8

;

1
te -

2

.2

.1

.02
.01
5

1

3

VeE -

COLLECTOR CURRENT (Al

10

1000

1000
VeE =5V

50

:J
U

rJ

ci

I

z
;;:

~
~ I--5p
l-

I

veE::::::; 5V

'" 100 I--

i'-

zW

~

10

0:
0:

:J

"rJ

~

ci

I

'\
.02

.05
Ie -

.1

200

I-

r"-..

20

1
.01

100 200 300

500

500

100

50

2N5665, 2N5667

2N5664, 2N5666

«

20

COLLECTOR VOLTAGE (Vl

D.C. Current Gain

D.C. Current Gain

~ 200

-f-

JN5665,'67

I

1-o

-

2N5664,66

.5

_0.05

~=-4V

.02
.01

5
~

I

........ ~VBE=-2V

..J

~

2N5667

100 200 300

TA - 25'C

.,

zw

50

Reverse Bias
Safe Operating Area
Clamped Inductive Switching

I

.!!!

CJ
f-

20

V" - COLLECTOR TO EMITTER VOLTAGE (V)

Unclamped Reverse Bias
Second Breakdown
10

..

1\
\

Vcr - COLLECTOR TO EMITTER VOLTAGE (V)

~

P\ II \l\
1\
f----.I \

_

=10%

2N5665

.01

:J

lI" ~

I

2N5664

w

1"-

-" .05

.02

~

~

I\..

tp= Ims

r-

Tc =IODoe

'\~

D.C.

'"

\

I

-" .05

"r\.

$

I~

~

.2

.5

1

2

:::~

V ~cS-V
10

.02

.05
Ie -

8-35

t----t-..,

2JC

20

1
.01

10

COLLECTOR CURRENT (Al

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

50

150'C

.1

"" ~'\

.2

.5

10

COLLECTOR CURRENT (Al

PRINTED IN U.S.A.

JAN, JANTX, & JANTXV 2N5664 JAN, JANTX, & JANTXV 2N5666
JAN, JANTX, & JANTXV 2N5665 JAN, JANTX, & JANTXV 2N5667

Saturation Voltal(e
Temperature Coefficients

Saturation' Voltages

_ +2

T~ = 2SJC

P

Ic/l.~

10

:[+1.5

~
OJ

VIE,

~"

'.=

I--

'CIS

.5

~ +1

li
I-'i
1

OJ

"OJ

.2
VeE, I.

.1

= 'CliO

V '

k-~

.02

e-

OJ

!t
0:

sSiC to 2S'C

-1

'""- -1.5

,2S'C,to

i:j
....
,

VeE,I.-lclS

.05 .1
.2
.5
Ie - COLLECTOR CURRENT (A)

~ f.--'

a:: -.5
:>

V

..Os·b==l-==-ET I
.01

:lVCE

o(J

II

0

>

/J..

25'C to lS0'C /

(; +.5

;;:

~

lSo'~

lL
L

V

V

V

~t02S'C

-2 I--~VIE

'-

I::C"I
.02
.05

'" -2.5
.01

10

.1
.2
.5
Ie - COLLECTOR CURRENT (A)

Switching Speed
. Characteristics

10

Switching Speed
Characteristics
10
Vee = 100V
'n=-II,=l c/IO

.5 r-r-~-+t----+---+----t---~~

..,"'
8 .2
"

1·1
~iE:f::S:t:==:::::f=-I--I--I--1
'"
:;;

>= .05

f-+-+-H-F"~

--1-1-

"'-g8

r-+-t-H+--::c:-:-±:---!-~.Lf--~",.c.'-i

150'C

2

Storage Time, t:"-

" -1-1g1
g
'":;; .5
OJ

__±---+----t--~----i

25'C

>=
.02

f-t-H-+t----t---+-----t-

1SO'C

~
t-

N."1

.2

.
t
Tri' I'
2S'C

.............

r---...

---r-- ~VK

--

V

f.--'

/

V

.1
.5
Ie -.COLLECTOR CURRENT (A)

2
Ie - COLLECTOR CURRENT (A)

Switching Speed Circuits

Thermal Response
DutyC ele

+lOOV

'I' = -In =30mA

....
z

Tektronix
54IA or
Equivalent

*

z'"

:~
......

SS
~~

-4V

II,

+100V

= -112 = SOmA

....

.05

Tektronix
54IA or
Equivalent

cH>-'VIN-*-'WIf'-
<.)

I-

<.)

---'
---'

1\

I

ImSec,10% \

.1

I

.05

VeE -

1\ \

\

20

50 80

12
V"" -

150

~

" """
',,"'"
""

Reverse Bias
Safe 0 perati ng Area
Clamped Inductive Switching

.5

"-

<.)

Z

'::>"

I-

.2

0

.1

T A = 25'C

'-.."-

"-

:::::: -4V,
R " , = I K _ I-----

I I I

.02

I-

~JC~,..?-

o

.1

I

.05

Ie -

~

--JOo.? r:::::

.I

<.)

I

1/'

_u

Ole.::::::.......... D~

JOf?

I

.01

5

.5

0:

o

:--,
'~:..~

I

4


u

20

D.C. Current Gain

50,000

z

10

COLLECTOR TO EMITTER VOLTAGE (V)

2N6350, 2N6352

.

5,000

I,v /
,,~
.. ~
flv

V

/

V

/

V

.~ r;c

/

V
/ /

~

.... '"

IV
V

----- "-

-

~

z

;;:

'"Z

I-

"

UJ



1

~t,)

v

-----

~

"0

.... ~I

---

---

jo'>'C

~""

V V/
v/

VeE

=

1-

5V

R"1 = 100

20

V
.01

2N6351,
2N6353

2N6350,
2N6352
.02

D.C. Current Gain

20,000

lOon

$

bl~ ~o

........

~

Rm

J I
1--.,
,'iJ
--

,"

@ V BIE

.05

1

Te = 100'C-

IC/IOO-

Valid for VOlE
from a to -5V

Limit per

!':

=

lSI :;:::-1 82

"-

\

g

lEI

10 20
5080 150
COLLECTOR TO EMITTER VOLTAGE (V)

10

1\\
\\

<.)

4-- 2N6353

\

COLLECTOR TO EMITTER VOLTAGE (V)

Unclamped Reverse Bias
Second Breakdown

UJ

-

.01
10

g

100"5ee
10%

1%

.02

.01

~

1\ ~

2N6352 ....

.02

.!!

~

_u

1\1<-- 2N6351

2N6350 -->

1%

100"5ee

\

\

.2

0

Te = lOO'C

\ ~+-lOJ.LSeC

<.)

1\

lOOpSec, 10%

10

l\

'----Duty Cyre

"'-[\\

.5



+2

I-

zW

U +1

~

iL

\

\.
'" _

V" !--

~

I\,

'.;%!:

,5
,2

-

...<

2N635

,1

~

I

"w
0

~

U

/
./

«
0:

le/50a

-INc.

-='k"

2~'C to 150'C

-2

W

l-

I

-

I

,5
IC - COLLECTOR CURRENT (A)

.5

Ie -

ly

0

2l

eu

.2

g
i'-

'"

::;:

;::

---

----

,....

~ Delay

I

0,5

.
~

I-"':":'

~\.e
-'I.S'C

lSO'C.......

;::

-

1"9::::::-

--::- I

./

~

.2

COLLECTOR CURRENT (A)

2
COLLECTOR CURRENT (A)

Ic -

Thermal Response

2N&351 & 3 Switching Speed Circuit

- --0.5

Duty Cycle

.5
I-

Z

W

iiiw
ZU

SCOPE

(sEE
NOTE

V

.

Storage Time, t,

I-

,5

2N6350 & 52 Swltchina Speed Circuit

~

.,/

::;:

Time, td

Vce = 30V
=-I.z = IC/25D

--

2S'C

u

,5
IC -

III

g.5
w

,\\«\e.,;:::::;-

,1 r-2S'C

~alll Tilm~, If

"8"

/V,~I

~

i-t-

lSO'C

'. = IC/lSO
RI2E = loon

0

"uc

10

Switching Speed
Characteristics

V~C '= 13riV

r-

'-

2
COLLECTOR CURRENT (A)

.2

Switching Speed
Characteristics

,as

I

I
.1

10

,/

b",,:::::: ~'Ct02S'C

6V"

-4

>


~ .5

~

"'-

.2

I

_u

.1

I I

I'\.

Maximum Safe Operating.Area
U2T201 & 205

~

I'\.

"-

.02
.01
1

10

~ r-rul~el width ~ 1 ms
"

"

10%
Pu I~~ Wldth = 1 ms
Duty Cycle = 25%
"ulse Width=1 ms

!z
'"a:a:

~
a:

"
.'
"
"
'" '" ""

~

~

~

1'\ '~

g

I. Duty Cycle -

1'\

Te = l00'C

1'\"

TA =25'C

l Duty Cycle = 2.5%

'"I'"

.05

Ic LOA, VCE 10V, f lOMHz, R", 100
Vcc - 30V,
Ic =5A,
U2T101, 201: Is (on) = Is (off) = SmA,
U2T10S, 20S: Is (on) = Is (off) = 10mA,
RB2E = 100

'"

D.C.-

...J

8

...

"

300 IJ. s'I dutY c yce-..;:2%.
I

~~

g
....
z

'"
...J

I'-.

U2T101, 201: VCE = 80V
U2T10S, 20S: VCE - 1SOV
Rs" - 2.2K, R", _100, T _lSO'C
U2T101, 201: VCE = 80V
U2T10S, 205: VCE - lS0V
"In I
n z.
".1 IVI nt.,
.lV, IE -- v, I
Yesl

ns
ns

Maximum Safe Operating Area
U2T101 & 105
10

Rs" = 2.2K, R", = 100

D.C.-

\

.5
Pulse Width = Ims
Duty Cycle = 25%

.2

8

.1

I

.05

Pulse Width

...J

I---U2T101

\\

\

\

\

= 1ms

Duty Cycle = 10%

io--U2T205

_u

r-. Jo--U2T105

~

j\; I--U2T201
.02

r'\

.01
2
VeE -

1

2
5 10
20
50 80100150
VeE - COLLECTOR - EMIITER VOLTAGE (VI

5 10
20
50 80100150
COLLECTOR- EM lITER VOLTAGE (VI

D.C. Current Gain VS. Collector Current
U2T101, U2Tl05, U2nOl, U2T205
10,000

z

«
Cl 1000
....z

'"0:0:
::>
(J

U

ci

I
.rt

100

10
UNITRODE· SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926-0404 • FAX (617) 924-1235

L -_ _ _ _ _~_________L______~

.01

8-42

.1
1.0
Ie - COLLECTOR CURRENT (AI

10

U2T301
U2T305

POWER DARLINGTONS

U2T401
U2T405

5 Amp, 150V, Planar NPN
FEATURES
• High Current Gain: 1000 min. @ Ic = 2A
• Low Saturation Voltage: as low as 1.SV max. @ Ic = 2A
• High Voltage: up to 150V min. VCER
• Monolithic Design Incorporating Multiple-Emitter Techniques
• Triple-Diffused Planar Construction

DESCRIPTION
Unitrode NPN Darlingtons consist of a two
transistor circuit on a single monolithic
planar chip.

. ABSOLUTE' MAXIMUM RATINGS
TO-33
U2T3Dl

~~:~t~~~~:i~~~t:;!~ge .....................................................

3 PI N TO-SS
U2T4Dl
U2T4D5

U2T3D5

........ 60V............. lS0V ................................................................ 6OV.............. lS0V

VEB , ........................................................................... 6V.................. 6V.................................................................. 6V .................. 6V
VEBI ........................................................................ 12V................ 12V.... ,........................................................... 12V................ 12V
D.C. Collector Current ................................................................................ 2A ................. 2A ................................................................. 2A.................. 2A
Peak Collector Current .............................................................................. SA ................. SA ................................................................. SA ................. SA
Base 1 Current .......................................................................................... O.SA .............. O.SA .............................................................. O.SA .............. O.SA
Power Dissipation
.
2S·C Ambient ................................
.............. .1W.... ....... 1W ..................................................................2W................. 2W
100·C Case ............................................................ 4W ............... 4W............................................................... 16W............... 16W
Therma I Resistance
.. .............. 6·C/W...... .
Junction to Case ..................................................... 2S·C/W................................ ...................
Operating and Storage Temperature Range ..................................... -6S·C to 200·C ...................................................................-6S·C to 200·C
MECHANICAL SPECIFICATIONS

U2T305

U2T301

. ..

,...

.305-3.35
.335-.]70
.240-.260

775-851
8.51-9.40
610-660

OI71::~f
BA"SE2

E

TO-33

.432

1.5 MIN.

~ :8~A

38.10 MIN

DISMAl!
.Olll OOl

0.46 MAX

0,79108

200

'02

100
.029-.045
100

2.54
074-1.14
2.54

COLLECTOR CONNECTED TO CASE

U2T401

3 Pin TO-66

,

c
A

1H
1f1

.

U2T405

•
C

250-.340

6.35-8.64

.620 MAlI .

lS75MAX .

.050- 075
.028-.034

127-1.91
0.71-0.86

.360 MIN.

K

.9S8-.962
190-.210
190-.210
.350 MAX. RAD
570-.590

L
M

.145 MAX. RAO.

F
G

.142-.1~

--

9.l4MIN.

24.33-24.43
4.83-5.33
4.83-5.33
8.89 MAX. RAD.
14.48-14.99
3.61-3.86
3.68 MAX. RAO.

COLLECTOR CONNECTED TO CASE

nn

L.:::2J
8-43

SEMICONDUCTOR
PRODUCTS

_UNITRDDE

-:w
...

U2T301 U2T305 U2T401 U2T405
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
U2T301 & U2T401
Min.
Max.

,Symbol

Test

D.C. Current Gain
(Note 1)
D.C. Current Gain
(Note 1)
Collector Saturation Voltage
(Note 1)
Collector-Emitter
Breakdown Voltage
(Note 1)

U2T30S & U2T40S
Min.
Max.

hFE

1000

-

VCE (sat)

-

1.5

-

2.5

BVCER

60

-

150

-

1000

hFE

-

-

Ic = lA, VCE = 2V, RB2E = 1K

1000

-

Ic = 2A, VCE = 5V, RB2E = 100

V

1<; = 2A, RB2E ::;: 100, IBI = 4mA

V

Ic = 25mA, RBIE = 2.2K; RB2E = 100
1

Collector Cutoff
Current

ICER

-

1.0

-

1.0

p.A

Collector Cutoff
Current

ICER

-

1.0

1.0

mA

Cobo

-

-

Collector Capacitance
A.C. Current Gain
Delay Time
Switching
Rise Time
Speeds
Storage Time
Fall Time
Note: 1. Pulse width

Test Conditions

Units

1000

60
5
100 Typ.
200 Typ.
800 Typ.
300 Typ.

hre
td
tr
ts
tr

60
5
100 Typ.
300 Typ.
800 Typ.
300 Typ.

-

RBIE = 2.2K, RB2E = 100
U2T301, 401: VCE = 60V
U2T305, 405: VCE = 150V'
RBIE - 2.2K, RB2E _ 100, T _ 150'C
U2T301, 401: VCE =60V
U2T305, 405: VCE = l50V
VCBI = 10V, IE - 0, f = lMHz
Ic = 0.5A, VCE = 10V, f = 10MHz, R", _100

pf

ns
ns
ns
ns

Vcc = 3OV, Ic = 2A, IB (on) = IB (off) = 4mA
RB2E = 100

= 300 p.s; duty cycle ';2%.
Maximum Safe Operating Area

Maximum Safe Operating Area

UmOl &305

5

$
~

1

~

.5

'"

.2

:>

u

t;'"

o

'"
8
..J
..J

I
_u

.1
.05

'" '"
'" ''""I""
I""
f"- f"-

l~

/

r'\.

e-Dt~ I", r\~

Pulse Width = Ims
Duty Cycle - 25%

.02

.01

.005

1

U2T401 &405

.1 J.

TA - 2S'C
Pulse Width = Ims
Duty Cycle = 2.5%

.

g

Pulse Width = Ims
Duty Cycle = 10%

z

'"'"
:>
'"
u

r--,

1'\

I"" 1'\

~
.5

'"

Duty Cycle

I

.2

~

f'

Pulse Width

=

"""

Ims

= 25%

I I
=

Te

~

\

l\

Pulse Width
Ims
Duty Cycle = 10%

.1

I'

.05
D.C.-

I

U2T301

loo'C

W,
k\

..J
..J

8

=

~I'

_u .02

(o--U2T305

I+-

t-U2T401

.01

f'

i<-U2T40S
.005

5
10 20
50 100 150
VeE - COLLECTOR - EM ITTER VOLTAGE (V)

1

10 20
50 100 150
2
VeE-COLLECTOR-EMITTER VOLTAGE (V)

O.C. Current Gain vs. Collector Cumnt
10,000

U2T301, U2T305, U2T401,.U2T405
r-----,-----,------,
T = 12S'C

z

~
~
'"'"

1000

I----+I-r----'-F-"--\:---j

'"

:>

u
U
ci 100 ~$"':.....--t-----t------j

I

.l
10 L.._ _ _ _' -_ _ _ _' -_ _ _- - '

.01

1.0

.1

10

Ie-COLLECTOR CURRENT (A)·
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926.()4()4 • FAX (617) 924·1235

8-44

PRINTED IN U.S.A.

POWER DARLINGTONS

U2TA506
U2TA508
U2TA510

3 Amp, lOOV, Planar NPN, Plastic

FEATURES
• High Current Gain: 500 min. @ Ie = 3A
• Low Saturation Voltage: as low as 1.5V max. @ Ie = 3A
• Economic Plastic Molded Construction

DESCRIPTION
Unitrode NPN Darlingtons consist of a
two transistor circuit on a single monolithic planar chip. including integral bias
resistance and protective diode. It is
ideally suited for pulse power applications in power supplies. printers. solid
state relays and displays.

ABSOLUTE MAXIMUM RATINGS
U2TA50G

Collector-Base Voltage. Vc.o
Collector-Emitter Voltage. VCEQ
Emitter-Base Voltage. V"o
D.C. Collector Current. Ic .
Peak Collector Current. Ie .
Base Current. I•.
Power Dissipation
25'C Case
25'C Ambient
Thermal Resistance. 8J _ C .
Thermal Resistance. 8 J _ A
Storage Temperature Range .
Maximum Junction Temperature

U2TA50B

80V ..
...... 60V ...

IOOV
80V ...
5V
. ...75A
SA ....
.6A ..

U2TA51C

. . . 120V
.... IOOV

.. 2.2W.
... 87ImW·...
.... 62.5'C/W ..
.... 155'C/W .
....... ...... .... -55 to +150'C .
+175'C.

U2TA506 U2TA508

U2TA510

TO-92

o

T

A

...L

~
~B~-

=r
lT7~J
Ilco=
E

=

C

~

Bo--mH

EO-O

-I ~~G
J

ft.B

C
0
E
F
G
H
J

INCHES
135 MIN.
170 .210
500 MIN.
.016 .019
.175 .205
.125 - .165
.080 - .105
.095 - .105
.045 - .055

MILLIMETERS
3.42 MIN
4.31 - 5.33
12.70 MIN.
.406 - .482
4.44 - 5.21
3.17 4.19
2.03 - 2.66
2.41 2.66
1.14 - 1.40

nn

SEMICONDUCTOR

~ PRODUCTS

3/78

8-45

_UNITRODE

-

U2TA506 U2TA508 U2TA510
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
D.C. Current Gain (Note 1)
Collector Saturation Voltage (Note 1)
Collector-Emitter Breakdown Voltage
(Note 1)
U2TA506
U2TA508
U2TA:S10
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Output Capacitance
A.C. Current Gain
Rise Time
Storage Time
Fall Time

hfE
hfE
hFE
VCE (sat)
BVcEO

Min.

Max.

Units

-

Vdc

1000
500
300 Typ.
1.5

-

Test Conditions
Ic = lA, VCE = SVdc
Ic = 3A. VCE = 5Vdc
Ic = 5A, VCE = 5Vdc
Ic = 3A, IB = 30mA
Ic _10mAdc

Vdc

-

60

80
100

-

ICER
ICER
lEBO
Cob
hr.
t,

50
50

-

4.0 Typ.
600 Typ.
1500 Typ.
SOOTyp.

t,
tf

VCE = rating, R = loon
VCE = rating, R = lOOn, TA = 125'C
VEB = 5Vdc
VCB = 10Vdc, IE = 0, f = 1MHz
Ic = 1Adc, VCE = 5Vdc, f = 10MHz
Ic- 2A

,.Adc
mAdc
pAdc
pf

10
1

ns
ns
ns

Vcc=- rating. '6 I"on'I

=

~D

I'oiiI

=4mA

Note 1: Pulse width = 300/ls; duty cycle S 2%.
Note 2: For thermal considerations for operating U2TA506. U2TA508 and U2TA510, refer to Application Note U·17.

Maximum Safe Operating Area
U2TA506, 508 & 510

~
I-

zOJ

a:
a:
:>
u
a:

"- ~ 11. J1
"- ~"- "'-V
"~ I'\.. "-"'"X

TA :25·C.
Pulse Width = Ims·
uly Cyele = 2.5%

D

·1
.5

. 2 D.C •

0

tiOJ

.1

0

.05

..J
..J

U

I

_u

D.C. Current Gain vs. Collector Current
10K r-----.---,.-::=:--1,.-----,

Y.

OilY cYi le
I

=1 25

z

'"

a:
a:
u

'1

:>

13
d 100

I

f-U2TAS06

\-------1,------+----,

I-U2TA508

'Pulse Width = Ims

.01

IK

I-

~.

Pulse Width = Ims
Duly Cycle = 10% I

.02

.005

''""
"

z
;;:
"

I--f-U2TA510

10L-_ _ _

2
5 10 20
50 100 150
Veo - COLLECTOR TO EM liTER VOLTAGE (V)

.01

~L-

.1

___

~

____

·IA

~

lOA

Ie - COLLECTOR CURRENT (A)

Saturation Voltage
vs Base Current
2.00

\

\

1.75

1\2
51.50
0::
~

·c
1\

"-

~1.25
I

j
~ 1.00

125'~

.75

0.1 0.2

0.5

1.0

_

,e=3A
25'C

'"

......

:::::..,

F===

le= A
-.....,a5·C

........

2

.5

10

20

50 100 200

I. - BASE CURRENT (rnA)
UNITRODE • SEMICONDUCTOR PRODUCTS
. 5ao PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

8-46

PRINTED IN U.S.A.

LOW VOLTAGE NPN TRANSISTOR

UBT430

40Amp, 50V, Planar NPN
Low Saturation Voltage (.3V @ 30A);
High Efficiency
DESCRIPTION

FEATURES

The UBT430 is a planar NPN bipolar transistor that has been designed to optimize
performance for low voltage circuits. It features a very low saturation voltage of only
.30V max at 30A, and .1OV at lOA. Because of its excellent switching speed (rise and
fall times typically under lOOns and storage times under 500ns) it offers excellent
performance even in high frequency switching circuits.

• Very Low On Resistance Typically 7 milliohms
• Reverse Blocking Voltage VECS =20V
• Low Temperature Coefficient of On
Resistance

This is the ideal transistor to use for emitter switching in off·line switching power
supplies. The low drop of this device also makes it the best choice for a battery back·up
circuit. Considerable improvement in efficiency can be achieved by using the UBT430
transistor in boost regulators operating off a 5V line and low voltage buck regulators.

• Fast Switching Times Make Operation
at High Frequency 'Easy
• High Gain Reduces Base Losses

Design Note DN-20 provides additional information on the application of the UBT430
transistor.

ABSOLUTE MAXIMUM RATINGS
Continuous Collector Current .......................... Ic ........................ 40A
Peak Emitter Current. ................................. 1M ...................... 150A
Inductive Collector Current Clamped ................... ILM ...................... SOA
Continuous Base Current. ............................. Ia ......................... SA
Peak Base Current .................................... laM ...................... 50A
Coliector·Emitter Voltage .............................. VCES ..................... 50V
Emitter·Base Voltage .................................. VEao ..................... 20V
Thermal Resistance ................................... RB .................... lOC/W
Power Dissipation ..................................................... 150W @ 25°C
Derating Factor ............................................................... lWI"C
Operating Temperature Range ...................................... -65°C to +175°C

MECHANICAL SPECIFICATIONS
UBT430

TO-204AE (TO-3 modified, 60 mil. pin)

22.2Z!U15.1
3.42

MAX OIA.

"'n!H~~1

IOI3J:X}=::f{SEATING

TTT

PLANE

::::lg::JIOIA ~I-- :~::::g.::g:
TWO PLACES

TWO PLACES

26.67
(l.QSD) MAX,

H::g·':'!O'A.
.

.11

TWO PLACES

COLLECfOR

lA:HIU;t
t MEASURED AT SEATING PLANE

Dimensions in Millimeters and {lnchesl

nn

SEMICONOUCTOR

~ PRODUCTS

8-47

_UNITRODE

..

UBT430
ELECTRICAL CHARACTERISTICS (at 25°C unless noted)
TEST
Collector Saturation Voltage

VeElsatl

On·Resistance

ReEION)

Current Gain

50

HFE

Base Saturation Voltage

VBEIs.tI

Coliector·Emitter
Sustaining Voltage

VCEOlsus)

Resistive
Switching
Speed
Inductive
Switching
Speed

MIN.

SYMBOL

TYP.

MAX.

0.07

0.1

0.21

0.3

0.30

0.4

7

10

Ie = lOA, IB = .5A

V

V

=30A, Ie = 1.2A
Ie = lOOmA

V

1.5

20
85

120

ns

Ie = 20A, IB1 = IB2 = 2A, Vee = lOV

300

500

ns

Ie = 20A, IB1 = le2 = 2A, Vee = 10V

Fall Time

tf

75

120

ns

Ie

Voltage
Storage Time

tsv

400

600

ns

tii

S5

120

F~!!

Time

100

:E

!e = 20.4., !;:;i = I;:;, =

.8,A"

Vee = lOV, L = lO;.:H

=50V

100

/lA

VeE

1

mA

VeE = 50V, T = 125°C

lEBO

200

/lA

VEe = 20V

1

mA

VEe

=20V, T = 125°C

Collector· Emitter Voltage vs Collector Current
at Various Forced Gains
1000
S
,S 500
I

J

le/l. = 100

-

~

'"Cl

A~
~ Te=25'C

0
....
~
<5
u

50 =25

~

20

"i;;""

>

'"
~
~

10

~
~

Gain vs Collector Current @ VeE
Various Temperatures

~IO

~
~

~

0

...... 5

u

10
20
Ie COLLECTOR CURRENT - (A)

I

-50
=25

50

20
10

50

~

~Te=125'C

le/l. = !2!l- ,.....~

100

ci:

0
....

/ .;..-'

~

~ '7

~ 200
0

r - 50

'"ci:

=20A, IB1 = IB2 =2A, Vee = lOV
Ie =20A, IB1 = le2 = .8A, Vee = lOV; L = lO/lH

ICES

S
,S 500
I

'"~

Ie

t,

Collector· Emitter Voltage vs Collector Current
at Various Forced Gains
1000

§;

=30A, IB = 1.2A

Ie = 20A, VeE = .5V

ts

Emitter·Base Cutoff Current

200

Ie

mel

Rise Time

Current

~

=30A, IB = 1.2A

Ie = 30A, IB = 1.2A, T = 125°C

Storage Time

Coliector·Emitter Cutoff Current

'"Cl«

Ie

100
1.2

17

CONDITIONS

I:JNIT

10
20
50
Ie COLLECTOR CURRENT - (A)

I

=O.5V at

Collector· Emitter Resistance vs
Junction Temperature

1000

/

500
~

'z"'
:;;:
Cl

....
Z

'"'":::J
'"

Te = 125'C

V

200
25'C

i

~

100 ~-65'C

~
RCE

I

50

=7mQ @ 25 C

Min. Gain @ 20A ~

U

V

20

....

10
I

10
20
50
Ie COLLECTOR CURRENT - (A)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

C1

V

/
Ie = 30A. I. = 3A

V

.., , /
-25
25
75
125
TJ JUNCTION TEMPERATURE - ('C)

8·48

175

PRINTED IN U.SA

UBT430
Inductive Switching Time vs Collector Current

Inductive Switching Time vs Collector Current

1000

1000

I

\
\

I"
:[

500

"

--

Ie

I"

8

·it

=

500

r--...

\

'"

=

Ie/I. 25
Te 25'C

'i;;-.

Ie/I. = 25
Te = 100'C

c

'"z
:;:

1\

U
l-

........

I"

.............. Ie

ii:

'">

"-...1,;

OJ

i=
u

:::l

'"

200

~

100

10
20

10

1

1

30

10

Inductive Switching Time vs
Base Drive Current
Ie - IDA
Te = 25°C

'""-

'"

200

VV

ii:

'">

Ifl/'

100

Ic Collector

'"~

50

VeE

10%

I-20
10

50

20

100

----

10%
I"

90%

1\

Current"

OJ

ti:::l

VeE Collector
Voltage

,..."

~ 1-""'""",

90%

r-

z
:;:
U
l-

- Ie Base
Current

V

l>"

OJ
OJ

'"

l""-

I"

500

30

Clamped Inductive Switching Waveforms
and Definitions
Inductive Turn Off

1000

~

20

Ie COLLECTOR CURRENT - CA)

Ie COLLECTOR CURRENT - CA)

I \
I V

il

II

k- lO%

I.

Ie

1111-Ie
I--

•

RATIO - Ie/I.

~

Junction Capacitance

__
I-t- ; - -

2000

I
~ 1000

Te = 25'C

z

«

I-

U

Cabo Collector-Base

500

r- Capacitance
I
is 200
tiz 100
I
11:

«
u

~

I

g:~~c~t~~~:r.Base-

I

I

II
10

20

Ve. OR VEe REVERSE VOLTAGE - CV)

5n_ ... ~

VB2 (adj, as req.)

~·~~I-

NOTES: 1. All resistors are in ohms.
2. All capacitors are in microfarads.

3. 01 - 04 are IN914 diodes.
4. D:i is IN6391 or equivalent.
5. L is selected as required (5 to 15 microhenries).

VARY PULSE WIDTH

51 = Vee IOV
52 = VCLAMP SUPPLY 30V
0, = 5051 SCHOTTKY
02 = 5051 SCHOTTKY
C, = .11JF

6. Adjust RB2 and/or VB2 for desired 182.
7. Circuit; OUT and adjacent circuit is critical due to
fast switching time Ringing voltage produced by
Ldi/dt effects ma~ be reduced by proper layout of
PC board.

L, -IOpH

FIGURE #1 TEST CIRCUIT FOR ILPK
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEl. (617) 926·0404 • FAX (617) 924·1235

FIGURE #2 INDUCTIVE SWITCHING CIRCUIT
WITH CLAMPED COLLECTOR

8-49

PRINTED IN U.S.A.

..

UBT430
Collector· Emitter Voltage

Collector· Emitter Voltage vs Base Current
1000

S'

.s

Te

500

I

30A
200

f-

~

f-

~

"-

\

100

~

20

ffi
f-

20A

f-

10
0.001

0.01

I........

lOA

r:i:

g
~

50

~

2A

0.1

5

IAI
10
0.001

10

0.01

"'"
~ ~

ffi

f-

'"

0.2

inw

Zu

C2 ~

/
Te

.l140A
30A
2011

I--"

15A
IDA ;

800
Ie

700

=2A

5A

f-

~~
p-,

~"

""'"ffi

~

O. 1

Z6JC(t) . r(t)R6JC

./

Single Pulse

R6JC

= 1.O"C/W

f-

u'"

//

=2rci

1100

~ 1000
'"W
~ 900

:!

0.5

::::i

~

10

Transient Thermal Resistance vs Time

§

~ 1200

5

0.1

Ie BASE CURRENT - (A)

1500

1300

I~I-

I""'-

20

IA

1600

1400

~A

......

8

i;

Base Emitter Voltage vs Base Current at
Various Collector Currents

~

15A

100

Ie BASE CURRENT - (A)

~

30A

:ii
w

2A

I""'-

200

>

IDA

"-

,

1\

w

Ys

50

u
w

-tt

5A

0

:f;

Base Current
Te = 125'C

500

I

15A

r:i:
0

S'

.s
0

>

ffi
f-

=25'C

4':1

'"co
~
0

VI

1000

J:
f-

0.05

0.02
0.0 1
0.01

....

0.1

5

10

20

50 1100 200

500

PULSE TIME - (mS)

t:t:m:::;;.-

I III

600

0.01

0.5

0.1

5

0.5

10

Ie = BASE CURRENT - (A)

ReverIe Blal Safe Operating Area
Forward Bias Safe Operating Area (SOA)

..'

200
100

O.lmS

g
'":::>

i'o..

80~~-+--r-~-+--r-~-+--t-~

lmS

50
DC

20

1--+-+-+~a:E~~~ =4V +-t--t-+-i

10

'"
'"

u

40r--r-i--~-+~t-~-i--~-+~

~

8

.E

Te = 25'C

20r--r-i--~-+--t-~-i~~-+~

0.5
0.2
0.1
0.5

10

20

VeE COLLECTOR·EMITTER VOLTAGE -

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEl. (617) 926·0404· FAX (617) 924·1235

50
VeE COLLECTOR·EMITTER VOLTAGE - (V)

(V)

8·50

PRINTED IN U.S.A.

POWER TRANSISTORS

UPTB520
UPTB530
UPTB540
UPTB550

0.1 Amp, 500V, Planar NPN, Plastic

FEATURES'

DESCRIPTION

•
•
•
•

Unitrode high voltage power transistors
provide a unique combination of low
saturation voltage, high gain and fast
switching. They are ideally suited for
pulse power applications in power
supplies, thermal printers, solid state
relays and pulse amplifiers .

Designed for High Speed Switching Applications
Collector-Emitter Voltage: up to 500V
Peak Collector Current: to .2A
Economical Plastic Molded Construction

..

ABSOLUTE MAXIMUM RATINGS
UPTB520

UPTB530

UPTB540

UPTB550

....... 250V ....... .
Collector-Base Voltage, VCBO ..
3S0V.
... .... 4S0V... ............... ........ 550V
Collector-Emitter Voltage, VCEO
..... 200V .... .
... 300V..
.. .... 400V.... ............. ......... SOOV
Emitter-Base Voltage, VEBO ..................... .
..........
........ ~V .. .
... 5V ........................... SV.............................. 5V
D.C. Collector Current, Ic
.. .lA.. .
........lA..
.........lA .... :....................... .lA
Peak Collector Current, Ic
.. ......... .
......2A
.... 2A
........2A .............................2A
Base Current, IB
................lA ...
...........•lA
...........lA....
'" .lA
Power Dissipation
25'C Case
......................
................... 2.4W ....................................................
2S'C Ambient ..................................................................................................................... 7S0mW ..................................................
Thermal Resistance, 6 J _ C ...................................................................................................................................... 62.S'C/W ............................................... .
Thermal Resistance, 6 J _ A ..................................................................................................................................... 200'C/W ...............................................
Storage Temperature Range .......................................................................................................................... -SS'C to +lSO'C ........................................
Maximum Junction Temperature ........................................................................................................................ +l7S'C ................................................

MECHANICAL SPECIFICATIONS
UPTB520 UPTB530 UPTB540 UPTB550

"rO-92

D

n=*'r,~
LEO-'
~,+ ,~ If;-'
A

...L

=
=

E

80---

H

A
B

C
D
E
F

G
H

J

INCHES
. 135 MIN.
.170 - .210
.500 MIN.
.016 - .019
.175 - .205
.125 - .165
.OBO - .105
.095 - .105
.045 - .055

MILLlMmRS
3.42 MIN .
4.31 - 5.33
12.70 MIN .
.406 - .4B2
4.44 - 5.21
3.17 - 4.19
2.03 - 2.66
2.41 - 2.66
1.14 - 1.40

..

nn

L.:::::J
3/78

8-51

SEMICONDUCTOR
PRODUCTS

_UNITRDDE·

UPTBS20 UPTBS30 UPTBS40 UPTBSSO
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

Min.

D.C;.Current Gain (Note II
D.C. Current Gain (Note 11
Collector Saturation Voltage (Note 1)

hFE
hFE
VCE (sat)
VcE(satl
VOE (sat)

20

Base Saturation Voltage (Note 1)
Collector-Base Breakdown Voltage
(Note 1)
UPTB520·
UPTB530·
UPTB540
UPTB550
Collector-Emitter Breakdown Voltage
(Note 1)
UPTB520
UPTB530
UPTB540
UPTBS50
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Output Capacitance
Gain-Bandwidth Product
Rise Time
Delay Time
Storage Time
Fall Time

Max.

-

5

-

1.2
l.0

250
350
4S0
5S0

-

i.s

BVc::oO

=
=
=
=
=

=
=
=
=
=

-

Vdc
Vdc
Vdc
Vdc

Ic 2SmA, VCE
SVdc
Ic 100mA, VCE 5Vdc
Ic SOmA, 10
10mA
Ic 20mA, 10
2mA
Ic
SOmA, 10 10mA
Ic _10pAdc

Vdc

Ic _lmAdc

-

-

BVCEO

ICES
ICES
IEOO
Cob
fT
t,
td
ts
tf

Test Conditions

Units

-

-

200
300
400
500

-

-

10
1
SO
50

-

pAdc
mAdc
pAdc
pf
MHz
ns
ns
ns
ns

-

IS
100 Typ.
50 Typ.
200 Typ.
1000 Typ.

VCE
VCE
VEO

= rated BVCEO' VOE =0

=rated BVCEO' T =125'C, VOE =0
=5Vdc
Vc~ = 10Vdc, IE = 0, f =1MHz
Ic _lAdc, VCE _ SVdc, f _10MHz
Ic = 100mA

NoIe: 1. Pulse width = 300ps; duty cycle :5 2%.
Note: 2. For thermal considerations for operating UPTB520, UPTB530, UPTB540 and UPTB550, refer to Application Note U-77.

D.C. Current Gain

VS.

Collector Current

Switching Speeds

500

10

,~~I

z~Or------+-=~~~~--_+----~

........",
k '-"fio'-C>

;;:
CJ
I-

zUJ

0:
0:
~

<>

Vee = lOOV
1,.11, =10

,1,,;-~;ro

100 f - - - - - j - -

~'<'"
~

t,::25~

"- "-

u
ci

1_
,:

~V

50 r------+--~--~~--_+~~~

20

~--+-+-+--+-~-t-\M

10

r------+--_+--~~--_+----~~

5 '--____-'-__--L_ _- - - ' ' - -_ _--L_ _ _ _
.001
.005
.01
.02
.05
.1

~~

r-.. ~

.2

.1

'--~

Ie -

i'~

.5

.001

.2

D,C. COLLECTOR CURRENT (A)

..002

.005
.01
.02
COLLECTOR CURRENT (A)

.05

.1

Switching Speed Circuit

+200V

UNITRODE ° SEMICONDUCTOR PRODUCTS .
580 PLEP,SANT STREET ° WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

8-52

PRINTED IN U.S.A.

SCRs & THYRISTORS

Product Selection Guides
Thyristors .................................................... 9-3
Ultra-Fast Switching ............................................. 9-4
Radiation Hardened SCRs ........................................ 9-4
PUTs ........................................................ 9-4
Datasheets ..................................................... 9-5

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

9-1

PRINTED IN U.S.A.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

9-2

PRINTED IN U.S.A.

PRODUCT SELECTION GU I DE

THYRISTORS (SCRs & PUTs)

TO·iS

TO·9

TO·39

"Available as JAN and JANTX types.
""Available as JAN type .
• "" Available as JAN. JANTX, JANTXV types.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

9·3

PRINTED IN U.S.A.

THYRISTORS (SCRs & PUTs)

PRODUCT SELECTION GUIDE

ULTRAFAST SWITCHING

ill

TO·1S

RADIATION HARDENED SCRs

I·······
...

.' .;.OI1;$tate
"'C~'rient:

. " ."

TO·1S

PUTs - PROGRAMMABLE
UNIJUNCTION TRANSISTORS

.. Available as JAN and JANTX types.

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404. FAX (617) 924·1235

9·4

PRINTED IN U.S.A.

SCRs

2N1870A-2N1874A, J

1.25 Amp, Planar
FEATURES
• Available as Either "JAN" or
Standard Types
• Operating D.C. Current Range:
5 to l250mA
• Pulse Currents: to 30A
• Voltage Ratings: to 200V
• Maximum Trigger Current: O.2mA
• Maximum Trigger Voltage: O.8V
• All Leads Isolated from Case
• Maximum e J _ c : 20'C/W

DESCRIPTION
These are premium PNPN controlled switches intended for use in applications
requiring a high degree of reliability assurance. The JAN types are specified under
MIL-S-l9500/l98, and are included in MIL-STD-70l as recommended types for
military usage.
This series is useful in a wide variety of applications including: safety, arming
and detonating circuits; timing and programming circuits; protective and warning
circuits; driving relays; driving indicator lamps, encoding and decoding circuits;
replacing relays, thyratrons, and magamps; servo motor control; pulse generation;
plus many others.

ABSOLUTE MAXIMUM RATINGS
2N187DA
JAN2N1870A

2N1871A
JAN2N1871A

2N1872A
JAN2N1872A

2N1873A

MECHANICAL SPECIFICATIONS
2N1870A-2N1874A

rc1F l

B1

CATHODE

E 0

-.---

~
.

A

--- _.
- --

\.F

---- --

GATE

ins.
275-335
290-.370
200-260
15MIN
010-030
011 t

ANODE

200
100
100

88f

TO-9

6.99-775
7.37-940
5.08-660
3810MIN
25-.76
.432 t .g~~

508
2.54

2"

n
n
L.=J
9-5

~

2N1874A
JAN2N1874A"

Repetitive Peak Off-State Voltage, VDRM .... ,................. 30V........
.......... 60V ......................... lODV. ..
............ l50V......................... 200V
Repetitive Peak Reverse Voltage, VRRM .
..... 30V........................... 60V..
........ lOOV.
............... l50V.......................... 200V
D.C. On-State Current, 'r
........... 250mA ....................................................................
lOO'C Ambient .......
......................... .
. ...... 1.25A .....................................................................
lOO'C Case ..............
......................... .
.... up to 30A ..................................................................
Repetitive Peak On-State Current, 'rRM ..............................................
Peak One Cycle Surge (Non-Rep.) On-State Current, ' rsM ........................................... . .......... .15A.......................................................................
Peak Gate Current, IGM
..................................
............ 250mA .....................................................................
Average Gate Current, IG(AVI ................................................................
. .............................. 25mA ........................................................,............ ..
Reverse Gate Voltage, VGR ...........
..........................................
..............5V.........................................................................
Thermal Resistance, Junction to Case, ReJ _ C ................................................. .
............. 20·C/W...................................................................
Operating and Storage Temperature Range .................................
..-65'C to +l50'C ............................................................

SEMICONDUCTOR
PRODUCTS

_UNITRODE

2N1870A·2N1874A
ELECTRICAL SPECIFICATIONS (at 25°C unless noted)t
Test

Symbol

Subgroup 1 (Visual and Mechanical)
Subgroup 2 (2SoC Tests)
Off·State Current
Reverse Current
Gate Trigger Voltage
Gate Trigger Current
On·State Voltage
Off·State Voltage - Critical of Rise
Reverse Gate Current
Holding Current
Subgroup 3 (12SoC Tests)
High Temp. Off·State Current
High Temp. Reverse Current
High Temp. Gate Non·Trigger Voltage
High Temp. Holding Current
Subgroup 4 (-6SoC Tests)
Low Temp. Gate Trigger Vc!tzge
Low Temp. Gate Trigger Current
Low Temp. Holding Current

IDRM
IRRM
VGT
IGT
VTM
dvc/ dt
IGR

Min.

Typical

Max.

Units

Test Conditions

0.4

O.S
O.S
O.SS

10
10
0.8
200
2.S

p.A
p.A
V
p.A

RGK = 1K, VDRM = + Rating
RGK
1K, VRRM
Rating
RGS = 100 ohms, VD= 5V
RGs> 10K ohms, VD= SV
ITM = 2A (pulse test)
Specified test circuit
VGRM = SV, anode open
IG = - 150p.A, VD= SV

30
1.8

V
V/p.s
p.A
rnA

100
0.5

10
S.O

15
15

100

0.3

IH

p.A
p.A

100

V

0.2
0.2

rnA

v

1.0
500

p.A
rnA

15

=

=-

RGK = 1K, VDRM = + Rating
RGK = 1K, VRRM = - Rating
RGS
100 ohms, VD SV
IG = - lS0p.A, VD= SV

=

o

_

'\GK -

=

,nn ........ _ ...
.l.VU VIIIII';),

\I

'D

_

1:\1

-~,

RGK > 10K ohms, VD= SV
IG = -lS0p.A, VAA = 5V

tAli values in this table are JEDEC registered.
Note: Voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a resistor, 1 K
or smaller, or other adequate gate bias is used.

Triggering and Bias Stabilization

1.

Gate Trigger Voltage

2.

Gate Trigger Current

800

~ 600

~!.2f----f---+--f--+-+--+--f---+

I-

'"~

Z

W

~ 400
:::J
U
0:

~ 200
~

0:
IW
I-

'"'"I

w

~

o

V//>' ALL UNITS FIRE
max.
/// /)';
V/// // //~
/ / / '/.:: /#/Y/ '/.:: ~ /L
min.
'«

>

NO UNITS FIRE

>"

~

0:
W

IGT

'"
~

0:
IW
I-

'"'"I

IGT

_,,-200

-4DO
-65

.2 f----+--+
~6L5----2~5-~-2~5--5~O-~7-5-1~O-0-12~5-~150

-25
TJ

-

25

50

75

100

125

150
TJ

JUNCTION TEMPERATURE (OC)

UNITRODE. SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404. FAX (617) 924-1235

9·6

-

JUNCTION TEMPERATURE (OC)

PRINTED IN U.S.A.

2N1870A-2N1874A

Holding Current
1. Max. Holding Current (Current Bias)

2. Max. Holding Current (Resistor Bias)
50

50

:<

:<

.s...

...a:z

20

~--I-

10

IG = -1.5mA

~;;:-I-r--

a:

:J

.s...

15a:

~

"CZ
~

x
~

a

"

2

.5 r -__-1__-+__~--t_-_+--IG-=r_--.0,5-m-A~

"I
_r.

r----1---+--~--r__+--_+--~__I

"
~

.1 r---'-1---+--1---r--+---+--1-~

150

50

:<

.s

20

10

!;:
...

10

g;

5

":!:c

2

u

r--

-'

a:
a:
u

:J

I-F:--=:A

:r

I

..: .2

.1
.05
-65

.15

IG =-.05mA

-

-

o

:r
Z

i

I

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

_J:

...............

i

.2

.1

9-7

1\

- f-l-

---

-3r-

.05
-65

150

= lOOP.

30h

=lK,

.5

Z

r-......

-25
25
50
75 100 125
TJ - JUNCTION TEMPERATURE ('C)

-

-'

I

.5

.5

RG,

"zC

-r- i'=".

1.5

o

i

-25
25
50
75
100 125
TJ - JUNCTION TEMPERATURE ('C)

4_ Min. Holding Current (Resistor Bias)

20

Z

~
~:~~ r--t--... r--. :-.........

.1

15

i

r--_

.2

.05
-65

50

Z

--

:--- r--

« .5
:;:

3. Min. Holding CurrenHCurrent Bias)

a:

~

~ r---....
i',.

o-'

.2

~100n

:r

.05 '--__--'__-'-__-'-__'------'___ L _ _- ' - - - '
25
50
75 100 125 150
-25
-65
TJ - JUNCTION TEMPERATURE ('C)

!...

-

--=:::::::::

U

:;:

I
_,

~

:J

-'
0

:r

10

a:

I"p:::::~r-t;

U

-

20 I-

RG, _10K

r--

----r--r--

-- -

I--

t-

r--l - I-l""- t---..,

r----..

-25
0
25
50
75 100 125
TJ - JUNCTION TEMPERATURE ('C)

150

PRINTED IN U.S.A.

..

2N1870A-2N1874A

Current Ratings - Thermal Design
On·State Current vs. Voltage

1.
50

tACJ ,/;

l,~/'
II $

...
z

10

10

~

'z"

I~'

OJ

~

0

a·
...

l

...

'"

20

--- ",,-

0

,

:or
.03

I

Pof

.1

/I

I

.05 I
.05

I

.1.2

'

OJ

TYPICAL
CHARACTERISTICS

lu

..

t--

2

OJ

>
i=

Ei0.

':e'
riit
~"I...

,...-., ,-'

I

.1

0.

I

~fp1 ~r

.: .2

5

""'"

1'1

,,

.5

OJ

I

I

I

.5· 1
10
V,-ON VOLTAGE (V)

I

I

20

50

I

~ ~

_" .05

.001

OJ
a: 2D
a:
u 10

...

-

OJ

~

z0
iii""
>
i=
i=
OJ

0.

.01""-

.03".1

-r-

0.

OJ

--

100

.5

r--

............

~

I

:t-- r-...

.1
25
TA

m.. -

"-\
r-- \1

::>

OJ

C!l

a:

10

'"""
OJ

0.

.5

"'"'" \

" \\

1.4

.05

.8

~

.6 .

OJ

DC

g

1~

zOJ .4

~

...

a:
'a:
::>
u

3~

...

OJ

6~

.3

...

6~

VI

Z

0

0

.2

ci

ci

:t

.4

J

.2

>

'"I

I

J

0

90

100
Te ... -

110
120
130
140
MAX. CASE TEMPERATURE ('C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

10 2

103

9-8

"'-

----........ ~

~\
~~ ~
"- ~\

~~

.1

o

150

o

'".""- ",,-1""
"'"

!;:

~

7 \\

. PA-POWER DISSIPATION (W)
.625
.5
.375
.25
.125

~--~~-t-~-+--t---+-~

a

-:-~

10- 3 10- 2 10-' 1
10
SURGE DURATION (s)

.5

1~

•

= 100'C

Te

10-' 10"

.5

I---t..o..,___+--+---+--+---l

a:
a:

...

6. Average Current vs, Ambient Temperature

,.---.---.----,---~---,-----,

1.2

~
111

"RA~~

BLJCKIN~ VOL~AGE

(wi

DC

g

,,

.1

5. Average Current vs, Case Temperature
POWER DISSIPATION
-2
1.5
1

BE~ORE ~URG~ =0

LINk:
MAY'%.,
NOT BE SUSTAINED FOR 0.1 SECONDS - (\
AFTER SURGE

.2

50
75
100
125
150
MAX. AMBIENT TEMPERATURE ('C)

PA 2.5

I,

,,

DAS~

I

1

,

_.
SOLID LINE:
BLOCKING VOLTAGE
MAY BE APPLIED
IMMEDIATELY AFTER SURGE

2

150

Surge Current vs. Time

'" "

20

VI

~s

j-----

DUTY CYCLE

.2

~\

a:
a:
::>
u

'-....., ~\

OJ

a:

...

110
120
130
140
MAX. CASE TEMPERATURE ('C)

m .. -

,,

50

~
zOJ

U

_.....1_ _-'--__..l._ _L---_--'--_--"J!

4.

.003- --....." ~

::>

.""'\

L.

3. Peak Current vs. Ambient Temperature
~ 50
...z

r-----..

\

90

POWER DISSIPATION (W)
.5
.375
.25
.125

~ ~'

.2

Te

PA .625

~ "'.\
--------

.3~

DUTY CYCLE"":l

.5

a:

~

-.......

.003

OJ

a:
a:
::>
u

z

...~
...a:z

POWER DISSIPATION (W)
2
1.5
1
.5

50

a:

/II
1. 1

OJ

Peak Current vs. Case Temperature
PA 2.5

)

20

g

2.

.~

o

25
so
100
125
75
ISO
TA ... - MAX. AMBIENT TEMPERATURE ('C)

PRINTED IN U.S.A.

SCRs

2N2323-2N2329, J, JTX, JTXV
2N2323A-2N2328A, J, JTX, JTXV
2N2323S-2N2329S, J, JTX, JTXV
2N2323AS-2N2328AS, J, JTX, JTXV

1.6 Amp, Planar
FEATURES
• Available as JAN, JANTX, & JANTXV
Types
• JAN Types Available in Ta-5
• 1.6A D.C. Current
• Peak Currents: to 30A
• Voltage Ratings: to 400V
• 20pA Max. Trigger Current (UA" types)
• O.6V Max. Trigger Voltage (UA" types)

CHIP

METALLIZATION

oon

8ACK ..• AU

THICKNESS

-0086

OESCRIPTION
These are premium thyristor switches intended for use in high performance
industrial, military and space applications requiring a high degree of reliability
assurance. This series is useful in a- wide variety of applications including timing
and programming circuits, protective and warning circuits, driving relays,
driving indicator lamps, encoding and decoding circuits, replacing relays,
thyratrons, and magamps, servo motor control, pulse generation, plus many others.
The high surge current rating USA -1 cycle) makes this series particularly
useful for squib firing.
The following JAN, JANTX and JANTXV types are specified under Mil-S-195001276A
and are included in Mil-STD-70l as recommended types for military usage:
2N2326
JAN2N2326S
JANTI2N2326S
JANTXY2N2326S
2N2326A
2N2327
JAN2N2326AS
JANTX2N2326AS
2N2327A
JANTXV2N2326AS
..... 200V ..
..... 2S0V ..

2N2323
2N2324
JAN2N2323S
JAN2N2324S
JAlm2N2323S
JANTI2N2324S
JANTXY2N2323S
JANTlY2N2324S
2N2323A
2N2324A
2N2325
JAN2N2323AS
JAN2N2324AS
JANTI2N2323AS
JANTX2N2324AS 2N2325A
JANTlY2N2323AS. JANTlY2N2324AS
... SOV ................ lOOV
... 1SOV

TOP .... AL

ABSOLUTE MAXIMUM RATINGS
Repetitive Peak Off-State Voltage, VORM
Repetitive Peak Reverse
Voltage, VRRM ............................... .
......... SOV
Non-Repetitive Peak Reverse
Voltage, VRSM « 5ms).
....................................... 75V
D.C. On-State Current, IT
80'C Ambient
8S'C Case
. One Cycle Surge (Non-Rep.) On-State Current, ITsM .
Repetitive Peak On-State Current, ITM .
Gate Power Dissipation, PGM ...
Gate Power Dissipation, PGMIAVI
Peak Gate Current, IGM
.................................. .
Reverse Gate Voltage ...............................
Reverse Gate Current, IGR
Storage Temperature Range
Operating Temperature Range

........... lOOV ........... JSOV

2N2328
JAM2N2328S
JANTX2N2328S
JANTlY2N2328S
2N2328A
2N2329
JAN2N2328AS
JAN2N2329S
JANTI2N2329S
JANTI2N2328AS
JANTlY2N2328AS JANTlY2N2329s
........ .400V
.300V

........ 200V .......... 2S0V ............300V .

...... 400V

....... lSOV ............ 22SV .......... 300V .......... 3S0V ..........400V ................ SOOV
....... 300mA
..... J.6A ..
....... JSA.. .
......................... 30A .. .
. ........ O.lW .... .
.................. O.OlW ... .
... 100mA ................................... .
...................... .
........ 6V...
...... 3mA ..................... .
....................... -6S'C to +lSO'C .. .
...... -6S'C to +12S'C

MECHANICAL SPECIFICATIONS
2N2323-2N2329, J. JTX, JTXV
2N2323S-2N2328S. J, JTX, JTXV
·2N2323A-2N2328A, J, JTX' JTXV 2N2323AS-2N2328AS, J, JTX, JTXV

[ c1fo" l
BIIEg

·
Z
A."":~/

E

-

--

-

~,,,,;

.

--- --

• INCHES
A .315-.335

GATE

G

-

---

ANODE

AJ

F

B .350-.370
.240-260
0 .010-.030
E .5 MIN
F .016-.019
G .190-.210
H .085-.105
J .028-.034
K .029-.045
L .100
C

TO-20SAD (TO-39)

MILLIMETERS
8.00-8.51
8.89-9.39
6.35-6.60
0.25-0.76
12.70 MIN
.406-.483
4.83-5.33
2.16-2.67
.711-.864
.737-1.14
2.54

n. n

'SEMICONOUCTOR

~ PRODUCTS

9-9

_"UNITRDDE

•

2N2323-2N2329, J, JTX, JTXV
2N2323S-2N2328S, J, JTX, JTXV
2N2323A-2N2328A, J, JTX, JTXV 2N2323AS-2N2328AS, J, JTX, JTXV

ELECTRICAL SPECIFICATIONS
Symbol

Test

Visual and Mechanical
25'C
Off-State Current
Reverse Current
Gate Trigger Current
"A" Types
non-"A" Types
Gate Trigger Voltage
"A" Types
non-"A" Types
On-State Voltage
Holding Current
Reverse Gate Current
Delay Time
Rise Time
Circuit Commutated Turn-Off Time
125'C
Off-State Current
Reverse Current
Gate Trigger Voltage
Holding Current
"An Types
non-"A" Types
Off-State Voltage - Critical Rate of Rise
"A" Types
non-"A" Types
-WC
Off-State Current
Reverse Current
Gate Trigger Current
"A" Types
non-"A" Types
Gate Trigger Voltage
"An Types
non-"A" Types
Holding Current

Min:

Typical

Max.

Test Conditions

Units

MIL-STD-750, Method 2071
IORM
IRRM
IGT
VGT
VTM
IH
IGR
td
tr
tq
IORM
IRRM
VGT
IH

-

-

10
10

/LA
/LA

VORM
VRRM

2

20
200

/LA
/LA

Vo
Vo

0.60
O.SO
2.2
2.0

V
V
V
mA
/LA
/LS
/LS
/LS

Vo == 6V, RGK == 2K, RL == lOOn
Vo == 6V, RGK == 1K, RL == lOOn
ITM == 4A (pulse test)
Vo == 6V, RGK == 1K (2K for "A" Types)
VGR == 6V
IG == 10mA, IT == lA, Vo == 30V
IG == 10mA, IT == lA, Vo == 30V
IT == lA, IR' == lA, RGK == 1K

!LA

VORM == Rating, RGK
VRRM == Rating, RGK
Vo == Rated VO' RGK

-

-

50

0.35
0.35

0.52
0.55
2.0
0.3
1
0.6
0.4
20

-

----

0.1

1
1
0.3

O.1t
0.15t

-

dvldt

200"

-

100
100

-

0.7"
' 1.S"
IORM
IRRM
IGT
VGT

IH

== Rating, RGK == 1K (2K for "A" Types)
== Rating, RGK == 1K (2K for "A" Types)

0.1
0.1

/LA
V

== fiV, RL == lOOn
== 6V, RL == lOOn

== 1K (2K for "A" Types)
== 1K (2K for "A" Types)
== 1K (2K for "An Types)

rnA
mA

Vo
Vo

== 6V, RGK == 2K
== 6V, RGK == 1K

V//Ls
V//Ls

Vo
Vn

== Rating, RGK == 2K
== Rating, RGK == 1K
== Rating, RGK == 1K (2K for "A" Types)
== Rating, .RGK == 1K (2K for "A" Types)

-

.05
.05

5.0'
5.0"

/LA
/LA

VORM
VRRM

50
100

75
350

/LA
/LA

Va
Vo

-

0.7

-

0.75

O.S"
0.9t
1.0
3.0t

V
V
V
mA

Vo == 6V, RGK == 2K, RL == lOOn
Vo == 6V, RGK == 2K, RL == lOOn
Vo == 6V, RGK == 1K, RL == loon
Vo'== 6V, RGK == 1K (2K'for "A" Types)

-

-

== 6V, RL == lOOn
== 6V, RL == lOOn

'I

• JAN and JANTX Types only.
t Industrial Types only.

JAN and JANTX Acceptance Tests
Group C ,Tests '

100% Screening TX-Types

Gr(lup B Tests

High Temperature Storage
Temperature Cycling
Constant Acceleration
Fine & Gross Hermetic Seal
Electrical Test
Burn-in
Electrical Test

Subgroup 1- Reverse Gate Curre'nt
Surge Current
Non-Repetitive Reverse Voltage
Subgroup 2 - Low Temp. Reverse Blocking Current
Low, Temp. Forward Blocking Current
Low Temp. Gate Trigger Voltage
Low Temp. Gate Trigger Current
Subgroup 3 - Temperature Cycling
Thermal Shock
Moisture Resistance
Solderability

Subgroup 1- Physical Dimensions
Subgroup 2 - Shock
Constant Acceleration
Vibration, Variable Frequency
Subgroup 3 - Barometric Pressure, Reduced
Subgroup 4 - Salt Atmosphere
Subgroup 5 - Terminal Strength
Subgroup 6-lntermittent Operating Life Test

Subgroup 4- Blocking Life Test

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924-1235'

9-10

PRINTED IN U.S.A.

2N2323-2N2329, J, JTX, JTXV
2N2323S-2N2328S, J, JTX, JTXV
2N2323A-2N2328A, J, JTX, JTXV 2N2323AS-2N2328AS, J, JTX, JTXV

Gate Trigger Current

Gate Trigger Voltage

~ 400

~

~

~ .B

~~--~~---+---+--~--~~

UJ

"«"'

~~~~~V/.m~>77.fn~fn77~~

200

~

'0



""0:....

UJ

a:

UJ

""0:....

a

UJ

....UJ

~

_6

.4

«

,200 r-----t---t---t---t---~--~~

"I

>jj' .2

-25
TJ -

0

25

50

75

100

125

JUNCTION TEMPERATURE (oC)

-25
TJ -

PD -

20

;;;

r------

~

~-4---~~.

zUJ

I

~

zUJ

....

i---t----t==-,......_


«

.1
-65

J

I

-25
TJ

-

a

25

50

75

100

125

JUNCTION TEMPERATURE (OC)

-.~

=

0

UJ

........

.4

o 75

125

.5

-- -T

.-

I

f

f--

KI ~t~ ~ --j

r--.... I'---......

!

I""

!

.""

I

r-- --

r--. ~"I,,\
r-- ~ ~ ~

--~ ~

BO
Te

85

m.. -

90

95 100 105 110 115 120 125

MAXIMUM CASE TEMPERATURE (OC)

Average Current vs. Ambient Temperature
PD -

1

I
I

con1duction
An~le
1BO'C

1.2

z

..J

J:

1.5

I""

UJ

Z

o

100.

D~C .

a: 1.6
a:

::J

::J

75

POWER DISSIPATION (W)

2

10

50

Average Current vs. Case Temperature

Holding Current

a:
a:

25

JUNCTION TEMPERATURE (DC)

Surge Current

POWER DISSIPATION (W)
24

~

....z
UJ

a:
a:

.B

::J



«
I

120'C

.4

"\

~

z

0

"'-.

"-...
..............

.2

J

r-TA=~

2

o

o

o
TA ... -

1

2

10

20

50

100

CYCLES AT 60Hz

MAXIMUM AMBIENT TEMPERATURE ('C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (SI7j 926·0404 • FAX (617) 924-1235

Te = 85'C

9-11

PRINTED IN U.S.A.

JAN & JANTX 2N3027-2N3032

SCRs
0.5 Amp, Planar

FEATURES
• JAN and JANTX Types Available
• Fully Characterized for "Worst Case" Design
• Passivated Planar Construction for Maximum
Reliabilityand Parameter Uniformity
• Low On-State Voltage and Fast Switching
at High Current Levels
• Typical Turn-On Time: 0.121's
• Typical Recovery Time: 0.71's

DESCRIPTION
The 2N3027 series of planar SCRs (controlled switches) are intended for use in
military and space applications requiring a high degree of reliability. They offer a
unique combination of extremely fast switching, precise triggering, high pulse
power, small size, intrinsic parameter stability, and high radiation tolerance.
The JAN and JANTX types are specified under MIL-S-19S00/419, and are included
in MIL-STD-701 as recommended types for military usage.

• rube CurrtmL:s: lu 3QA
ABSOLUTE MAXIMUM RATINGS
JAN & JANTX 2N3021
JAN & JANTX 2N3030

JAN & JANTX 2N3028
JAN & JANTX 2N3031

JAN & JANTX 2N3029
JAN & JANTX 2N3032

Repetitive Peak Off-State Voltage, VORM .
.................... 30V.............. .
.. ....... 60V ...................................... 100V
Repetitive Peak Reverse Voltage, VRRM ...
.... 60V...................................... 100V
........... 30V........................ .
D.C. On-State Current, IT
.. ........................................................SOOmA.......
.......................... ..
100'C Case '" .............. .
.............................. 250mA .............................................
7S'C Ambient
....................................................................................... 30A ...............................................
Repetitive Peak On-State Current, ITRM
Surge (Non-Rep.) On-State Current, I TSM
SOms ......................................................................................................................o......... SA .................................................
Bms ..............
........................... ...........................
.. .................... BA .................................................
.. ......................................................................2S0mA ............................................
Peak Gate Current, IGM ....
Average Gate Current, IG(Av) .......................................................................................................................... 2SmA..............................................
Reverse Gate Voltage ...........................................................................................................................................SV .................................................
Reverse Gate Current ........................................................................................,..............................................3mA ...............................................
Storage Temperature Range ...............................................................................................................-65'C to +200'C .................................. .
Operating Temperature Range
...............................................
.. .. -6S'C to +150'·C ...................................
Note: Blocking ·voltage ratings apply· over the operating temperature range, provided the gate is connected to the cathode through an

appropriate resistor, or adequate gate bias is used. (See section on bias stabilization.) .
MECHANICAL SPECIFICATIONS
JAN & JANTX 2N3027-2N3032

TO-18

GATE

A

C
D

INCHES
.178-.195 DIA.
.170-.210
.5 MIN.
.209-.230 DIA,

H

4.31-5.33
12.70 MIN.

5.31-5.84 DIA.

:g~~

017:t .002 OIA.

.432:t

.020 MAX.

.508 MAX .

.

F

MILLIMETERS

4.52-4.95 DIA.

.001 OIA.

. loot.OlD DIA.
' .04lt.OO5
.028-.048

2.54:1:.254 OIA.
1.04:1:.127
.711-1.22

nn

SEMICONDUCTOR

~ PRODUCTS

9-12

_UNITRODE

JAN & JANTX 2N3027 -2N3032
ELECTRICAL SPECIFICATIONS (at 25°C unless noted) 2N3027 - 2N3028 - 2N3029
Parameler
SUBGROUP 1
Visual and Mechanical

Symbol

Min_

Typical

Max_

Unils

-

-

-

-

-

IORM
tRRM

-

~A
~A

5
-5
.40
0.8
0.3

.002
.002
8
8
.55
1.2
0.7

0.1
0.1

VGA
lar
Var
VT
IH

Off-State Voltage - Critical Rate of Rise

dVc/dt

30
15
10

Gale Trigger-on Pulse Widlh
Delay Time
Rise Time
Circuil Commulaled Turn-off Time

Ipg(on)
Id
Ir
tg

SUBGROUP 2 (25°C Tesls)
Off-Slale Currenl
Reverse Currenl
Reverse Gale Vollage
Gale Trigger Currenl
Gale Trigger Vollage
On-Slale Vollage
Holding Currenl

-

200
.80
1.5
5.0

V
~A

V
V
rnA

Tesl Condilions
MIL-STO-750
Melhod 2071
RGK = 1K, VORM = Raling
RGK = 1K, VARM = Raling
IGA = O.1mA
RGS = 10K, VD = 5V
RGS = 1002, Vo = 5V
IT = 1A (pulse lesl)
RGK = 1K, Vo = 5V

SUBGROUP 3 (25°C Tests)

SUBGROUP 4 (1500 C Tesls)
High Temp. Off-Stale Current
High Temp. Reverse Current
High Temp. Gate Trigger Vollage
High Temp. Holding Currenl
SUBGROUP 5 (-65°CTesls)
Low Temp. Gale Trigger Voltage
Low Temp. Gate Trigger Currenl
Low Temp. Holding Currenl

-

-

-

0.2

2.0

~s

20
50
0.6
1.0

~A
~A

1.2
10

tRAM

-

Var
IH

.10
.05

2
20
.15
.20

Var
lar
IH

0.6
0
0.5

0.75
150
3.5

lOAM

-

60
30
25
.07
.08
.04
0.7

-

-

1.1

V/~s
~s
~s
~s

RGK = IK, Vo = 30V (2N3027)
RGK = IK, Vo ~ 60V (2N3028)
RGK = IK, Vo = looV (2N3029)
IG = lOrnA, IT = lA, VOM = 30V
IG = lOrnA, IT = lA, Vo = 30V
IG = lOrnA, IT = lA, Vo = 30V
IT = lA, IA = lA, RGK = IK

V
rnA

RGK
RGK
RGS
RGK

=
=
=
=

IK, VDRM
IK, VARM
1002, Vo
IK, Vo =

= Raling
= Raling
= 5V
5V

V
mA
mA

RGS = 1002, Vo = 5V
RGS .; 10K, VD = 5V
RGK = IK, VD = 5V

ELECTRICAL SPECIFICATIONS (at 25°C unless noted) 2N3030 - 2N3031 - 2N3032
Parameler
SUBGROUP 1
Visual and Mechanical
SUBGROUP 2 (25°C Tesls)
Off-Slate Currenl
Reverse Currenl
Reverse Gale Vollage
Gale Trigger Currenl
Gale Trigger Vollage
On-Slate Vollage
Holding Currenl

Symbol

IORM

Min.

Typical

Max.

Unils

-

-

-

-

-

.002
.002
8

0.1
0.1

~A

-

V

tRRM

-

VGA
lar
Var
VT
IH

5
-5
0.44
0.8
0.3

Off-Slale Vollage - Critit;ll Rale ~I Rise

dVc/dt

30
15
10

Gate Trigger-on Pulse Width
Delay Time
Rise Time
Circuil Commutaled Turn-off Time

tpg (on)
td
tr
Ig

1.2
1.0

20
0.6
1.5
4.0

~A
~A

V
V
rnA

Test Condilions
MIL·STD-750
Melhod 2071
RGK = IK, VOAM = Raling
RGK = IK, VAAM = Raling
IGA = O.1mA
RGS = 10K, VD = 5V
RGS = 1002, VD = 5V
IT = 1A (pulse lest)
RGK = IK, Vo = 5V

SUBGROUP 3 (25OC Tesls)

SUBGROUP 4 (150OC Tests)
High Temp. Off-Slate Current
High Temp. Reverse Currenl
High Temp. Gate Trigger Vollage
High Temp. Holding Current
SUBGROUP 5 (-65OC Tesls)
Low Temp. Gate Trigger Voltage
Low'remp. Gate Trigger Current
Low Temp. Holding Currenl

-

-

-

-

2.0

~s

20
50
0.4
2.0

~A
~A

V
rnA

RGK
RGK
RGS
RGK

0.95
0.5
8

V
mA
mA

RGS = 1002, Vo = 5V
RGS = 10K, VD = 5V
RGK = IK, VD = 5V

'RAM

-

Var
IH

.10
.05

2
20
.15
.30

Var
1m
IH

0.44
0
0.5

0.8
0.4
5.0

IORM

-

60
30
25
.05
0.1
.05
0.7

0.1

-

V/~s
~s

~s
~s

RGK = IK, VD = 30V (2N3030)
RGK = IK, Vo = 60V (2N3031)
RGK = 1K, Vo = 100V (2N3032)
IG =·IOmA, IT = lA, Vo = 30V
IG = 10mA, IT = lA, VD = 30V
IG = lOmA, IT = lA, VD = 30V
IT = lA, IA = lA, RGK = IK
=
=
=
=

1K, VDAM
IK, VAAM
1002, VD
IK, VD =

= Raling
= Raling
= 5V
5V

High Reliability Processing
The 2N3027-2N3032 series provides a complele range 01 high reliabilily processing lrom Ihe slandard devices Ihat undergo exlensive eleclrical lesling,
through JAN and JANTX levels. 100% processing, Group B, and Group C lesls lor JAN and JANTX devices is shOwn below. For furlher details, see
MIL-S-195OO/419(EL).
100% Screening TX-Types
Group B Tests
Group C Tests
High Temperature Storage
Subgroup 1 - Physical Dimensions
Subgroup 1- Shock
Temperalure Cycling
Subgroup 2 - Solderability
Vibration, Variable Frequency
Conslant Acceleralion
Temperature Cycling
Subgroup 2 - Salt Atmosphere
Thermal Shock
Subgroup 3 - Terminal Sirengih
Fine & Gross Hermetic Seal
Constanl Acceleration
Subgroup 4 - High Temp. Anode Vollage - Critical
Electrical Test
Burn-in
Moisture Resistance
rate or rise
Subgroup 5 - Storage Life Test
Subgroup 3 - Surge Current
Electrical Test
Subgroup 6 - Operating Life Test
Subgroup 4 - Blocking Life Test
Subgroup 5 - Storage Life Tesl
UNITRODE • SEMICONDUCTOR PRODUCTS
Subgroup
6
Operating
Life
Tesl
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235
PRINTED IN U.S.A.
9-13

III

JAN & JANTX 2N3027-2N3032
TYPICAL CHARACTERISTICS

2N3027 - 2N3028 - 2N3029
Gate Trigger Current

Gate Trigger Voltage

1400

,---,--,--,--,---r----,--,----,

1.4 ,---,--,--,--,---,--,--,---,

;; 1200

k---I-+-+_-f__+-+-+--I

~ 1.2 t-----t--+-+--t-

.:0

w

l

0:

u

BOO

o

f+-A--I--+-+--

ffi

0:

""

~ 600 1n~7d-+-+_-f__+-+-+--I

S!
0:

~ 400

'i~
_tD

200 f7'T-.nI,-/-7'1-,~~;::-h--l:~+-+--I

.6

'i

.4 t-----t--+i;-""'"'-'-bf+H'+.f-Jf-h~+_I1

-25
TJ

-

0
25
so 75 100 125
JUNCTION TEMPERATURE ('C)

o

soo

150

TJ

200

"'-

on

..J

";:::

u

100
50
20
10
TJ

ii:

u

= 25'C
\

:;:
:J

:;:

4

"-

lK

I\

~

3K

I
I

~

~
'tI

t',_

I'-..

\

10K

I'....

.........

30K

RGK

5

"'''o.{ t - -

i

I

I

I

i

.2

5

20

50

100

200

Max. Holding Current (Resistor Bias)

;;

Z

w 10
~

- - ~~~

Z

:::.:::::

-::::::1--:.

I

,

....

.{1(+.:.0~1 -

I
kK

I

~

1

10
20
50
100
VD-APPLIED OFF·STATE VOLTAGE (V)

6

Min. Holding Current (Resistor Bias)

200

.5

..J

0

i
i
I

-'"

i
i

.1
-25
25
50
75 100 125
TJ - JUNCTION TEMPERATURE ('C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

10

2
. 1

J:

.2

.05
-65

20

U

"Ciz

X

:;!

I

:J

ll(r-....,:

~""

J:

_I

{K

0:
0:

Ii'.... ~ ...........

..J

o

:;!

I-

zw

I--...;;:

U

"Ci
X

.s

20

I0:
0:

I'I
300n

iJ = 125'C

50'

50

:J

150

DASH LINES SHOW .001 pfd CAPACITOR
ADDED BETWEEN GATE AND CATHODE

APPLIED OFF-STATE VOLTAGE (V)

;;

.s

125

BIASED AS SHOWN IN FIG. 1

.2
10

100

\f ~II0K- ~1(.:t~001

:;:

Z
.5

VD-

I'....

5

:J

I

'\

"\

10

.5 I--OASH LINES SHOW .001 pfd CAPACITORADDlED BElj'EEN IGATE fND CATHODfj

1

\

50

:;:

I--BIA~ED AS SHOWN IN FIG. 1

Z

1\

100

~ 20

<3
;:::

75

~.

\

>-

'f,
'f-.

so

Min. Critical dv/dt (125'C - R Bias)

200

~\ ~

300!)

25

JUNCTION TEMPERATURE ('C)

-

SOO

:\ *+

1\

-25

-65

Min. Critical dv/dt (25'C - R Bias)

>'tI

Ir'-;H-H'-I-TV+'M-h!-l-H+'f-Y-+t91-..-;::j

NO UNITS FIRE

I NO UNITS FII1E

-65

~
:0

+--1----+-+--1

>tE .2

0

-200

.8 f.h'+I-I-h4t-P1-~

~

w
~

P"7'-/-:I74'-d--+_-f__+-+-+--I

1

.5
.2
.1

--

b--

.05
-65

150

9-14

--

t-=== ::::::= t:=::: :-- -- fls, _"" 100 ' _ -:~t}
r--. -.....

r-....
~
. . . . . r-....

11(3g(j:::::::-

Ii?- . . . .

3~

s'I""lO~

........

25
50
75
100 125
-25
TJ - JUNCTION TEMPERATURE ('C)

150

. 'P.RtNTED IN U.S.A.

JAN & JANTX 2N3027-2N3032
TYPICAL CHARAcTERISTICS
2N3030 - 2N3031 - 2N3032
Gate Trigger Current

Gate Trigger Voltage
1.4 , . . - - - - , - - - , - , - - . - - - . - - - , - , - - ,

~

.5

0- 500

~

z

"'~
:J

ffi
"";;:

~

300 !,.L,1r----1--r-+-ALL UNilTS FIRE

"_~I

'"

.8 ~~---1---r-1--+-~--r-T----I

.~

"

.6 H'-T:H'-T:ffr.l't'J-.:::..

"'
~

.4

I
>~

.2

""'

0-

"'~

1.2 ~--+-1----I1--

""'~

400

100 ~~~~-r~1--~-+-~-~~
0 1Wc..£.4c..L.:JC-,~~~o9'",""*,,,:q~

-100~-~~+-1--~-+-~-r--1
NO UNITS FIRE

-25
25
50
75 100 125
T J - JUNCTION TEMPERATURE ('C)

ISO

-25
25
50
75
100 125
TJ - JUNCTION TEMPERATURE ('C)

3 Min. Critical dv/dt (2S'C - R Bias)
500

\\

200

1\

~ 100

">
--50
:;;
"> 20
. 'C
...J

5;::

10

;;:

5

o
::;;
:J
::;;

25'C

i\
\

lK

i'..

3K_

I

SHOW~

I

:;;

SO

10

......

u
::;;

5

::;;

i

I

.2

.2
Vo -

5

20

50

100

Vo -

APPLIED OFF-STATE VOLTAGE (V)

6

Max. Holding Current (Resistor Bias)

.s

- - 1---

20
10

5

~

--... -...

...J

J:

~

~r
~

::;;

"-

3K

I

RGK

I.

,,11( -I- .001

r--

101( I

= 10K-"-~OOl r--

50
100
10
20
APPLiED OFF-STATE VOLTAGE (V)

200

Min. Holding Current (Resistor Bias)

.5

...J

J:

iZ

IIGK~

I
Z

i

.1

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

C=-

o

-...~

25
50
75
100 125
JUNCTION TEMPERATURE ('C)

5

"Ci

_I

-25
TJ -

10

z

.2

.05
-65

20

0-

iii
!5'"u

t::: t::
~~O!!
z" 2 ~ t::::
--. t:::::
Ci
-...
'-r.........
-...
o
-~
::;;

I

~

0-

o

11K

50

50

iii
!5'"

"-

DASH LINES SHOW .0011'fd CAPACITOR
ADDED BETWEEN GATE AND CATHODE

1

200

~

..s

1\

= 125'C

BIASED AS SHOWN IN FIG. 1

.5

10

30ml

\

:J

z

.5 f-DASH LINES SHOW .OOll'fd CAPACITORADDED BETWEEN GATE AND CATHODE
1

\

\

TJ

P

I,

1\ '\

20

;::

;;:

',c;.

IN FIG. 1

I

100

u

"0

30K

'"
~
">
'C
;;t.

r--1~ ' -

10K
RGK

BIASED AS

I \

150

dvl dt (12S·C - R Bias)

1\

200

-\-

i'-..

Min. Critical

500

,,~

1"'-

2

z

i

=

TJ

4

I\~
,300!l

f----j--+--

.5
.2

c--::: ::::::::S: l:::::r-- c:--.:~00i!
r-r- r-r~::::::-- r-....

.1
.05
-65

150

9-15

----1

i$--'::--.
G

II

I "R"-

"'101(-'"

;--

~
~

-........

......

~
~

-25
25
50
75
100 125
TJ - JUNCTION TEMPERATURE ('C)

150

PRINTED IN U.S.A.

JAN & JANTX 2N3027-2N3032
CURRENTRATINGS.
C2

so

PA -

5

-% ~J
$

I-

10

I-

Z

OJ
0:
0:

:>
(J

!

i

I

I·

2

!;;

Z

0

pI.

OJ

Characteristics

~~

.05

.1

.2
Vr -

.5

Q.

.2

OJ

OJ
0:

"'11 '""'11 iII

I-~ ,...""

-

Q.

>
;:::
;:::

I

J

1-"

.5
1
2
5
10
ON-STATE VOLTAGE (V)

so

20

"""'\\

-:or-. r--..

0

~

.1

.05

10

'"

p

~

I---

.001.

;;'i
Typical-

.2

~

-:ooJ- r-....

z

.5

I
~

20

(J

~
'I!

"

«

OJ
0:
0:

OJ
I-

J

OJ
I-

~.

so

:>

If!

I

POWER DISSIPATION (W)

A

~

Z

,(J

20

5

Peak Current vs.Case Temperature·

FOrward on Current vs. Voltage

Cl

l l -l'--...

h-

~cle 1
I

100
Tc

I

I

no

120

.....,.

"'\\
~ \'

"'"r--.\'

~ \\
,
hl

.1
.05 I
90

"'\

~ r---...

130

140

ISO

MAX. CASE TEMPERATURE ('C)

mn -

C3 Peak Current vs. Ambient Temperature
TO-18 Ratings (see note) ,.,
PA -

5

.3

50

I-

Z

OJ
0:
0:

20

(J

10

:>

OJ
I-

~

5

0

2

'"z

'"
Q.

OJ

.5

OJ

.2

;:::
;:::
Q.

OJ
0:

I, .1

~ .05

o

25
TA

C5

m.. -

I-

'"
3"""-'"

~~

.3

~

"
~
r-~(j,CJ< ~ ,\

~

N

'\\
r\.\'
C6 Average Current vs. Ambient Temperature
TO·18 Ratings (see note)

~

PA -

~

POWER DISSIPATION' (W)

.4

5

,'\.

l;:
OJ

~'\

""'"

.2

0

ci

>
«
I

~

............
-.....;0.]

r--

.1

.3

.2

.1

90

100
Tc m..

69

'"

(J

OJ

~

-~

ci

~
I

~

"

.1 r---+---r--+---~~~---I

. OL-_-L_ _
a
25
so

~_~

120
130
140
150
MAX. CASE TEMPERATURE eC)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

.2

z
o

~

no

-

t==::+-""""",,,:->'c-+---I~--+---I

:>

-

o

.3

0:
0::

~
"~

«
I-

'"

.....,.

.o~-

POWER DISSIPATION (W)

A

OJ
I-

Z

r--r---

I-r.; ",'\

.4

OJ
0:
0:

(J

-

DC

Z

:>

·001

r--. -..:.00.]......... ~

Average Current vs. Case Temperature'
PA -

.5

Surge Current vs. Time

.1

100
125
ISO
75
MAX. AMBIENT TEMPERATURE ('C)

~

5

.2

----

«
OJ
>

C4

POWER DISSIPATION (W)

.4

T A .,< -

9-16

__
100

75

J-_~L-~

125

ISO

MAX. AMBIENT TEMPERATURE ('C)

PRINTED IN U.S.A.

JAN & JANTX 2N3027-2N3032

SWITCHING'SPEEDS
52 Maximum Delay Time td' Rise Time t,.
and Gate Trigger Pulse Width tp9 (on)

51 Maximum Delay Time td' Rise Time t,.
and Gate Trigger Pulse Width tp9 (on)
10

I

"-

I

TJ

"- ~

'iii'
.5

.5

:;;:

.2

w

I
I
i

i

j::

'"

I~
.~~

w
.2

j::

r::::::-MAX I

.1

I""

• P9

.01 .02

10

I

MAX. log (IG _ 0.5mA) _

.5

I

:;;:

.2 t--MAX. Id (I. "" 10mA)
.1

MAX. log (I.

.05

'"
.5.

:;

~

RG•

"t-

i='"'

'i'.-

----

~~

0

< 10K i. -

f..-- ~

~

L

v-:::
k-...-'
r--~

IA

:;
~
U

.5

~• .2
.1
-65

.01
.2

V

~

o

-

RGK:::: 10K

II{

:;;
:;;

III
/

. _0

10

w

I--

150

1A

:J

:J

10mA)

J
I

Z
a: 20

I
.1

50 f--I,

o

I

MAX. I,

.02

I

Maximum Circuit Commutated
Turn-off Time tq

100

""-

-

MAX. Id (IG - 0.5mA)

j::

MAX. Id (IG - lOmA)

25
50
75
100 125
-25
TJ - JUNCTION TEMPERATURE (·C)

54

T~ = 25°~_
1

0.5T)-

MAX.t,

.01
-65

20

r-,--

(IG - 10mA)

.02

.05 .1.2
.5
5 10
IG - PULSE GATE CURRENT (mAj

(I

G

I

53 Maximum Delay Time td' Rise Time t,.
and Gate Trigger Pulse Width tpg (on)

w

I

.05

I

=0.5~A) -

rI

MAX. I

!

:;;:

I

.02

'"
.5

MAX. Id (IG

!

.5

~

'1
.v

I,

.01

I

l:=-

MAX. I,

.05

i

1

""~.j-

.1

1~=11-

If =lA

""I\..

I

10

LJc-

.5
1
5
10
I, - ON-STATE CURRENT (A)

20

55

-25
0
25
50
75
100 125
TJ - JUNCTION TEMPERATURE ('C)

150

Maximum Circuit Commutated
Turn-off Time tq

100
50

I

20

r--

10

---

'""-

. -'0

1"J~r=---

,J,

. -

I.

ISO'C~

~_o
'/.50C

w

:;;
j::

"j-

•

~'/.5·C,"

.5

r--

:..--~ f..---

!----

-;:::'\F

1'J::=-

.2

Rr""rr-

.1

.1

.2

.5

10

20

I, - ON-STATE CURRENT (A)
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924·1235

9-17

PRINTED IN U.S.A.

SCRs
1.6 Amp, Planar

FEATURES

DESCRIPTION

• Maximum Gate Trigger Current: 20pA
• Closely Controlled Gate Trigger Voltage:
.44 to .6V
• Operating Current Range: 2mAto 1.6A
• Voltage Ratings: to 400V
• Low On-State Voltage
• Specified for dv/dt and Switching Time

These devices are intended for general purpose usage in Military/aerospace or severe
industrial environments. Major design parameters are specified at the temperature
extremes, thus permitting worst case design on the basis of guaranteed values.
These devices undergo 100% preconditioning, which includes high temperature
storage and temperatu(e cycling followed by a fine leak test as a regular part of the
manufacturing procedure.
The high voltage types of the 2NS724 series;!re especially useful as pulse modulator
switches in low to medium power pulse modulator applications; Specific parameters
such as rise time, delay time, holding current, and recovery time can be selected
for optimum performance in a pulse modulator circuit.

ABSOLUTE MAXIMUM RATINGS
2N5724

2N5725

2N5726

2N5727

2N5728

Repetitive Peak Off-State Voltage, VDRM .•.. , ................. 60V ......................... 100V......
.. ...... 200V......
... 300V ......................... 400V
Repetitive Peak' Reverse Voltage, VRRM ...................... 6OV ......................... 100V.......................... 2OOV.......................... 300V .......................... 400V
'Non-Repetitive ·Peak Off-State Voltage, VDSM .................................................................................. SOOV.........................................................
D.C. On-State Current, IT
7S·C Ambient ................................................................................................4S0mA .................................................................... ..
8S·C Case .......................................................................................................1.6A..........................................................................
Repetitive Peak On-State Current, ITRM ................................................................................... up to 30A .....................................................................
Peak One Cycle Surge (Non-Rep.) On-State Current, ITSM .......................................................... ISA..........................................................................
Peak Gate Current, IGM ........................................................... :.......................................................... 250mA .................................... :: .................................
.. .... 25mA .......................................................................
Average Gate 'Current, IGIAVI ............................ ................................................
Reverse. Gate Current, IGR ... ........................................................................
. ................... 3mA ..........................................................................
Reverse Gate Voltage, VGR ......................................... ,................................................
.. ....... 6V................
.. ....................................
Operating and Storage Temperature Range .. ...................................... ..... -6S·C to +lSO·C ............................................................ ..

MECHANICAL SPECIFICATIONS
2N5124-2N5128

TO-205AD' (TO-39)

in,.

.305-.335
.335-.370
.240-.260
.010-.030
.5 MIN.
.017:1:

7.75-a.51
8.51-9.40
6.35-6.60
.25-.76
12.70 MIN .

:gg¥

.200
.100
.031:1:.003
029-,045
.100

.432:t:~~
5.08
2.54
.79i:.08
.74-1.14
2.54

nL.:::::Jn
9-18

SEMICONDUCTOR
F'RDDUCTS

._UNITRDDE

2N5724-2N572"8
ELECTRICAL SPECIFICATIONS
Test

SUBGROUP 1
Visual and Mechanical
SUBGROUP 2 (25'C TESTS)
Off-State Current
Reverse Current
Reverse Gate Voltage
Gate Trigger Current
Gate Trigger Voltage
On-State Voltage
Holding Current
SUBGROUP 3 (25'C TESTS)
Off-State Voltage - Critical Rate of Rise
Gate Trigger - on Pulse Width
Delay Time
Rise Time
Circuit Commutated Turn-off Time
2NS724, 2NS725, 2NS726,
2NS727, 2N5728
SUBGROUP 4 (150'C TESTS)
High Temp. Off-State Current
High Temp. Reverse Current
High Temp. Gate Trigger Voltage
High Temp. Holding Current
SUBGROUP 5 (-6S'C TESTS)
Low Temp. Gate Trigger Voltage
Low Temp. Gate Trigger Current
Low Temp. Holding Current

Symbol

Min.

Typical

-

-

-

-

-

IORM
IRRM
VGR
IGT
VGT
VT
IH

-

0.1
0.1

5

.05
.05
8

-

2

0.44

0.5
2.3
0.8

20
0.6
2.S
2.0

JlA
JlA
V
JlA
V
V
rnA

RGK = lK, VORM = Rating
RGK = lK, VRRM = Rating
IGR =O.lmA
RGS = 10K, Vo = SV
RGS = lOOn, Vo = SV
IT = SA (pulse test)
RGK = lK, Vo = 5V

v/Jls
JlS
JlS

RGK = lK, Vo =
IG = lOrnA, IT =
IG = lOrnA, IT =
IG = lOrnA, IT =

0.3
100

dvldt
tpg (on)
td
t,

-

tq

-

-

150
0.1
0.1
0.3

-

Units

Max.

0.5

-

Test Conditions

30V
lA, Vo = 30V
lA, Vo = 30V
lA, Vo = 30V

-

~s

IS
30

30
50

JlS
JlS

IT. = lA, iR = lA, RGK = lK

200
200

-

JlA
JlA
V
rnA

RGK = lK, VORM = Rating
RGK = lK, VRRM = Rating_
RGS = lOOn, VD = SV
RGK = lK, Vo = 5V

0.9
125
3.0

V
JlA
rnA

RGS = lOOn, Vo = SV
RGS = 10K, Vo = SV
RGK = lK, Vo = 5V

IORM
IRRM
VGT
IH

0.10
0.10

SO
80
O.lS
0.15

VGT
IGT
IH

-

0.7
50
1.2

-

Note 1 See rating curves for full rating information.
Note 2 Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected to the cathode through a
resistor, lK or smaller, or other adequate gate bias is used.

Gate Trigger Current

Gate Trigger Voltage

800

1.4

1.2

;(

.3 600

ALL UNITS FIRE

ALL UNITS FIRE

I-

Z

UJ

UJ

0:
0:

::>
u

<.'l

~

400

~

0:

0:

UJ

<.'l
<.'l

a:
I-

1.0

UJ

.

UJ

I-

<.'l

I

.8

<.'l

200

S!

0:
I-

7lrrrrrr ""

.6

UJ

~

R U//,

Ji

I

~

-200

.4

.2

NO UNITS FIRE

-400

--65

-25
TJ

-

25

50

75

100

125

150

--65

JUNCTION TEMPERATURE ('C)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL (617) 926-0404 - FAX (617) 924-1235

-25
TJ

9-19

-

25

50

75

100

125

150

JUNCTION TEMPERATURE ('C)

PRINTED IN U.S.A.

2N57;(4-2N5728

Max. Holding Current

Off-State Current

so

1000

100

~
!<

f----+---t---+---f-------,,.£-.j

20

....

10

.5

z

I-----=~........:~

0:
0:

10

::l
U
CI

0:
0:

U

"'

1.0

~

.1

lie

z
is
....

::l

0

J:

X

«
::;;

.5

I

I

~:ull
25

so

TJ

_4

X

I I

100

75

«

125

::;;

.1
.05

150

-25

-65

JUNCTION TEMPERATURE ("Cl

-

TJ

;t

20

20

....Z

10

'10

~

"'

::l

"'0:0:

R.. "" 10011

Z

r-r--. r--

J:

I

-'

i
i

/

.5

.2
.1

r-

,I

.-

RGK~
-25
TJ

-

25

so

75

"'-

Z

0

.5

100"

125

lSO

~

100

II

.1

~-.J-,. _.

.05
125

lSO

-

! '

I

TJ = 25"C

.

-- -

U
.05

0.1

0,2

0.5
Yr -

9-20

l-

MAX .

/

I I
I
/

I

.2

I

..:-

..........

..

,,

....

V>

JUNCTION TEMPERATURE ("Cl

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

i

"'«....

r---...

,05

-65

U

----:--

~ r-- r-...

/

I

::l

0
....
0

75

J./ J

....Z

0:
0:

U
CI

so

25

On-State Current
YS. Voltage
50

i
i
I

0

JUNCTION'TEMPERATURE'("Cl

-

Min. Holding Current

so

.5

R.. "" lOOu~--+-----t

"'

"'

~

;t

1.0

2.0

5.0

10

20

so

ON-STATE VOLTAGE (Vl

PRINTED IN U.SA

2N5724-2N5728

Avg. Current
vs. Ambient Temperature

Avg. Current
vs. Case Temperature
PD -

PD -

POWER DISSIPATION (W)

20

. 2.0

15

10

5

1.

.B

POWER DISSIPATION (W)

.8

.6

.4

.2

.7

DC

~ 1.6

"-

I-

z

W

'"'"

:>
u

w

1.2

I-

Ifl~

Z

3~~

;::en

0

.8

f-- 6¢

I

-

""........

ci

>
«

~
Iz

'",""

I-

I'---...... ~

ci
>

70

'"'"

:>
(J

.5

w

«

I-

"" "" '"
--,r--..
I

.4

.6

w

.............

~

en

.4

Z

0

«
I

"1'0-

:--- r-~~
--...:::

-

.3

.2
.1

~

90
100
110
120
130
140
80
T e ... - MAX. CASE TEMPERATURE ('e)

150

25
TA

50
75
100
125
MAX. AMBIENT TEMPERATURE ('C)

m .. -

150

Surge Current
~

50

I-

Z

W

'":>'"

20

w

10

u

r-- ~
I~

'"

~

z
o

a:

w

'"Z
o

1':.
w

'"'en"

I

~

Te

I""
=

.5

TA

::J

"i5
0..

I

J

= 85'C-

.........

75,6--

.2

.1
.05
10- 5

10-4

10-1

10- 2

10-1

10

102

10l

SURGE DURATION (5)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

9-21

PRINTED IN U.S.A.

•

2N6119-2N6120

PUTs
Planar, TO-18, Hermetic
FEATURES
• Hermetically Sealed TO-18 Metal Can
• Programmable Eta, RBB , Ip and Iv
• Maximum Peak Point Current: 150nA
• Minimum Valley Current to 1.5mA
• Nano-Amp Leakage
• .Passivated Planar Construction for Maximum
Reliability and Parameter Uniformity

DESCRIPTION
Functionally equivalent to standard unijunction transistors, Unitrode's Programmable
Unijunction Transistors offer the distinct advantage of versatile programming. External
resistors can be added to meet the designer's needs in programming Eta, RBB , Ip and Iv
functions. This series also features a hermetically sealed TO-18 package for optimum
reliability in all environmental conditions. Applications include pulse and timing
circuits, SCR trigger circuits, relaxation oscillators and sensing circuits. For additional
information see Unitrode Application Note U-66.

ABSOLUTE MAXIMUM RATINGS
Anode-to-Cathode Voltage, VAK
Gate-to-Cathode Forward Voltage, VGK
Gate-to-Anode Reverse Voltage, VGAR .
Gate-to-Cathode Reverse. Voltage, VGKR .
Peak Recurrent Forward Current
101's, 1% Duty Cycle.
1001's, 1% Duty Cycle .
Power Dissipation
25'C Ambient
Derating Factor
Storage Temperature
Operating Temperature Range.

........ ±40V
........... 40V
... 40V
-5V
.. 8A
5A
....... 400mW
...................
.. 3.2mW/'C
.......... -55'C to +125'C
............ -55'C to +125'C

MECHANICAL SPECIFICATIONS
2N6119-2N6121t·

INCHES

A
B

.178-.1950IA.
.170-.210

o

.209-.230 DIA.

.5 MIN.

GATE CONNECTED TO CASE

:gg~ g:~:

E

.017 ±

F

.020 MAX.

TO-18

MILLIMETERS
4.52-4.95 DIA.

4.31-5.33
12.70 MIN .
5.31-5.84 OIA.

.432 ± :g~!
.508 MAX.

.1-;7~-r;:~~~~,",:",:~;;;1~,-,D",IA,,-.-+_2~1:~;;;4.:;::::2"'1~~;.::.DI,,",A.'-i
.028-.048

.711-1.22

n
L=-.Jn
9-22

SEMICONDUCTOR
PRODUCTS

_UNITRDDE

2N6119-2N6120
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
2N6120

2N6119

Symbol

Fig.

Peak Current

Ip

1

Valley Current

Iv

1

Test

Offset Voltage

VT

1

Gate-to-Anode Leakage

IGAO

2

Gate-to-Cathode Leakage
Forward Voltage
Pulse Output Voltage
Pulse Output Rate of Rise

IGKS
VF

3

Vo
t,

5
5

4

Min.

Max.

Min.

Max.

Units

5
2

-

1.0
0.15

pA
pA
pA
p.A
rnA
V
V
nA
nA
nA
V
V
ns

-

70
-

1.5
0.2
0.2

-

-

50

0.6
1.6
10
100
100
1.0

-

25

1.0
0.2
0.2

-

-

-

9

-

9

-

80

-

-

25
0.6
0.6
10
100
100
1.0

80

RG = 10k, Vs =
RG = 1 Meg.
RG = 10k, Vs =
RG = 1 Meg.
RG = 200fl
RG = 10k, Vs =
RG = 1 Meg.
T = 25'C, Vs =
T -75'C
Vs = 40V
IF = 50rnA

lOV
10V

10V
40V

c) Characteristic Curve...,..-

b) Equivalent Test Circuit

a) Typical Circuit

Test Conditions

Figure 1

T

L

Figure 2

r
l

'

Figure 4

Figure 3

+20V

6V

.6V

==~

______. . .

Figure 5

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

9-23

PRINTED IN U.S.A.

2N6119-2N6120

Typical Peak Point Current
.. vs. Gate Source Voltage

~

~
....

..:! 10

....

zUJ

_ I_ 2N6i19
- - - - 2N6120

zUJ

0:
0:

10KQ

10

I----i--+__-l-_-.j

:J
U

....Z

.z

....
o
D..

U

10KQ

--~-_+---1

D..

1MIl,

.1

---2N6119
- - --2N6120

....
z

2000

::!'lOO0

2001l

0:

:J
U

>
UJ

10KIl

...J

~ 100

>
...J

«
u

10KIl

0:
>
.... 10

1MIl

I

1

RG=1MO

.:?

. --- --- ---

~

....z

-- ---- ----------- --- ---

0:

:J
U

~
...J
...J

:;
...J

20~_ I- t20~1l_

::!1000

100

J

l- I- t-

i
10KIl_

I l- 1-I- l10K\!,
t-

1~!l'1- I-lI'- ,

«
0:
RG=IMIl
>
.... 10

u

I

!
.:?

'r-- ,

Vs = 1°~1
·---2N6119
- - - - 2N6120

I-t-t-

-

--

t-

- -- '-

I--

T- t-

,

,

--

-80 -80 -40 -20 0 20 40 60 80 100 120 140 160
T, -AMBIENT TEMPERATURE (OC)

10
15
·20
Vs - GATE SOURCE VOLTAGE (V)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926-0404· FAX (617) 924-1235

-

Typical Valley Current
vs. Ambient Temperature
10,000

1
0

'\ .... ,

-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
T, -AMBIENT TEMPERATURE (OC)

GATE SOURCE VOLTAGE (V)

Typical Valley Current

~

1

I'-- r---

!'--

VS. Gate Source Voltage

..:!

J

LI 1111"j,J II nI I
0:

10,000

~

,, f"- .... , .... ....
,
", ~ ......

...J

()

v, -

I

RG=

ili'"D..

1MQK - - -

'"

«
UJ

J.

V\ = ~OV
- - - 2N6119
- - - - 2N6120

10KIl,

I I"-- "I'-- ........
l~~g~

0:
0:

:J

0
D..

Typical Peak Point Current
VS. Ambient Temperature

9-24

PRINTED IN U.S.A.

2N6119-2N6120

Typical Pulse Output
ys. Circuit Supply Voltage

Typical Offset Voltage
ys. Ambient Temperature
1.4
1.3

I

v, = 10V

~
w 1.2

"'"....
0
..J

1.1

1.0

>

.9

......
0

.8

....w

Ul

"

.7

~

.6

..J

a:'"

u

.5

....>-

.4

I

.3

!

.2

,,;-

'\:

;\'

~

'!>

./0

I~~
'1'.0
1./~0J I'-.

.1

I

0

-80 -60 -40 -20
T, -

a

I'-.

20 40 60 80 100 120.140 160

AMBIENT TEMPERATURE ('C)

Typical On·State Current vs. Voltage

Gate·Anode Blocking Current
ys. Ambient Temperature

;;
.3

....z
W
0:
0:

5
....

:>
u
~

z

UI
0:
0:

.1 f--f---+---+-----,H----,I------I

;;;

w

~

III
W

o

!1!

II

:>
u

g

Z

.01 f--f---+-....".'-+......,'--t------I

o

'"

~

"I\1.001

.1f--+-+++-Hf1f1--H+Hfl+!--+-t+++l-IH

I
-"
L-_L-_~1,
___

R,
S10K

16K

V,

R

6V

VBB-V v

---<

Iv

C,
.2 J1f

27K

R
.6V

Figure 5
UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEl. (617) 926-0404· FAX (617) 924-1235

9-27

PRINTED IN U.S.A

2N6137

Peak Point Current VS. Ambient Temperature

Peak Point Current VS. Gate Source Resistance
10

v.

10

10V

V

SPEC.
MAX.

.........

'~PEC.

"-

MAX.

:;:

.3

I-

I-

Z

Z

'"

'"0:.
0:

0:
0:

:>

u

I-

z

--

~=10KIl

I-

z

"

0
Q.

:;:

I

......

:>

u

'"Q.

I
~~IKIl

"'" ~

:;:

.3

~
'"Q.
i:i

.1

............

.1

1

~

.""
~G

.01
100

lK
RG -

10K
lOOK
GATE SOURCE RESISTANCE (Il)

.01
-50

1M

-25
T. -

V
:;:

:;:

.3 100
I-

SPEC.
MAX.

u

I-

u

>.

'"
...J
...J

V

>

;;

10

1
.001

I>

.01
.1
IG-GATE CURRENT

---- ---

0:
0:

:>

,,-

>

...J
...J

1

.3 100
z·
",.

SPEC.
MIN.

Z

'"

150

1000

/

:>

---

100
50
75
25
AMBIENT TEMPERATURE ('C)

Vs

'"0:0:

IMII

Valley Current VS. Ambient Temperature

Valley Current VS. 'Gate Current
1000

"

10V

V

1

=(R!l (MA)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

10

1
-50

10

-

.............,

=

RG -10KIl

r-- r-- r-- I--- RG= IMIl

-25
T. -

9-28

--

10V

25
75
100
50
AMBIENT TEMPERATURE (OC)

125

PRINTED IN U.S.A..

2N6137

Offset Voltage ys.
Ambient Temperature

Typical Pulse Output Voltage ys.
Circuit Supply Voltage

3.0

'~t

100

~

2.5

C

w

""
S

80

0

I-

w

:::>

(!)

"-

""

I-

I-

:J
0

..J

0

>
1.5
w
en
u.
u.

SPEC. MAX.
@ RG =·lMP.

I-

0

I

:>

60

I~e< ~

UJ

en

..J

:J

"-

~
~
Ii'.

.5

27K

Note: R must be chosen so that the
current available at the firing point
exceeds Ip and steady state on current
is less than I.. at the desired level
of V, for the circuit to oscillate.

>

~ 2.0

101"

20

(!)

""0::<>

-

,0,q;-t
. . . /~...<:l;' '"

>-

~<'k;

°lro
~lM!l

..e'1>;-rP ~

40

..J

I

t:::::-J

SPEC. MAX.@ RG

20

~
0
>

= 10K!!

,,""/ :-(
c,/' "",,,,
~ LL V ~14~~6~;i'
/'

l-

a

a

~

20
V-

-50

-25

0
25
50
75
100
TA - AMBIENT TEMPERATURE (OC)

40

•

/

60

80

100

CIRCUIT SUPPLY VOLTAGE (V)

125

Typical Current vs. On-State Voltage

Gate-Anode Blocking Current ys.
Ambient Temperature

10

'T'~_

25°C

!I"

T

V

125°C

GAO

I-

I /
I-

Z

UJ
0:
0:

W
0:

a:

:J

<>

:::>

1

<>

tJ

0

UJ

/

..J

ID

i!:

V

w

0
0

III

z

I

~

.1

(!)

z
;;:

l-

0

/

Z

/'

$

Rating=

<
.3

/

z

""

.1

w

.01

/

/

I-

""I
(!)

-Maximum

/

0

-~

TYPp/

I
.01

f

.1
V, -

10
ON·STATE VOLTAGE (V)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

.001
-100

100

9-29

-50
50
100
TA - AMBIENT TEMPERATURE (OC)

ISO

PRINTED IN U.S.A.

AAI00-AAI04
AAI07-AAlll
AAl14-AAl18

SCRs
.5A, Planar

FEATURES
• Maximum Gate Trigger Current: 2, 20 or 200pA
e Tight Gate Trigger Voltage Range: .44 to .6V
• Voltage Ratings: to 400V
• Specified for dv/dt and Switching Time

DESCRIPTION
This data sheet describes Unitrode's AA Series O.5A SCRs designed for low-current
sensing applications. Units are available in a complete range of blocking voltages
from 60 to 400 volts.
The AAlOO series offers a maximum gate trigger current of 2.0 microamps making
it the most sensitive device of its type. The AA107 series has a maximum 1ST of
20pA while this parameter is specified at 200pA for the AA114 series.

ABSOLUTE MAXIMUM RATINGS
AA~

~M

~~

~~

~~

AA107
AAl14

AA10B
AA115

AA109
AA116

AA110
AAl17

AA111
AA118

Repetitive Peak Off-State Voltage, VeRM .................. 60V....
... 100V......................... 200V.........
300V......................... 400V
Repetitive Peak Reverse Voltage, VRRM .....
....... 60V .......................... 100V......................... 200V....
............ 300V ......................... 400V
Non-Repetitive Peak Reverse Voltage, VRSM ............ BOV ......................... l50V.....
.. 300V........................ 400V......................... 500V
Non-Repetitive Peak Off-State Voltage, VesM
....... 500V....
................................................
D.C. On-State Current, IT
................. 250mA...
...............................................
75"C Ambient
..............................................
....... 500mA.........
100"C Case ...... .
. up to 30A ................................................................
Repetitive Peak On-State Current, ITRM
Peak One Cycle Surge (Non-Rep.) On-State Current, I TSM .
.................. ...... 5A ..................................................................
............................
....................... .
........ 250mA
Peak Gate Current, ISM .......... .....................
................. .
.......... 25mA...
...............................................
Average Gate Current, I SIAV)
...................... .
. ......................................... 6V....
............................. .
Reverse Gate Voltage VSR ....
........... -65"C to +150"C.
.................................................
Operating and Storage Temperature Range .

MECHANICAL SPECIFICATIONS
AAl00-AA104 AA107-AA111 AAl14-AA118

TO-18

GATE

INCHES
A
B

.178-.195 DIA.

.. 170-.210

C

.5 MIN.

e

.209 .230 DIA.

E

.
.001DIA.
.020 MAX.

017:1: .002 DIA.

. 100:.010 DIA.

H
J

.041:1:..005

.028-.048

MILLIMETERS
4.52 4.95 OIA.

4.31 5.33
12.70 MIN .
5.31 5.84 OIA.

.432 t

:g~~

.508 MAX.
2.54:.254 DIA .

1.04:1:..127
.711-1.22

nn

SEMICONDUCTOR

~ PRODUCTS

9-30

_UNITRDDE

AAlOO-AAl04

AAl07-AA111

AA114-AA118

ELECTRICAL SPECIFICATIONS (at 2S'C unless noted)
Parameter

SUBGROUP 1
Visual & Mechanical
SUBGROUP 2 (2S'C TESTS)
Off-State Current
Reverse Current
Reverse Gate Current
Gate Trigger Current
AAlOO-104
AAl07-111
AA114-118
Gate Trigger Voltage
On-State Voltage
Holding Current
SUBGROUP 3 (2S'C TESTS)
Off-State Voltage - Critical Rate of Rise
Gate Trigger - on Pulse Width
Delay Time
Rise Time
Circuit Commutated Turn-off Time
SUBGROUP 4 (12S'C TESTS)
Off-State Current
Reverse Current
Gate Trigger Voltage
Holding Current

Units

Symbol

Min.

Typical

-

-

-

-

-

-

-

.01
.01
0.1

0.1
0.1
0.2

p.A
p.A
p.A

RGK =
RGK =
VGR =
RGS =

-

0.2
2.0
20
0.52
1.1
0.5

2.0
20
200
0.60
1.5
2.0

p.A
p.A
p.A
V
V
rnA

lOR ...
IRR ...
IGR
IGT

VGT
Vr
I

0.44

0.3

dv/dt
(on)
td
t,

t pg

tq

lOR...
IRR ...
VGT
IH

50

Max.

-

100
0.5
0.6
0.4
20

-

0.15
0.2

ps
ps
ps
ps

RGK = 1K, Vo = 30V
IG = lOrnA, IT = lA, Vo = 30V
IG = lOrnA, IT = lA, Vo = 30V
IG = lOrnA, IT == lA, Vo = 30V
IT = lA, IR = lA, RGK = lK

pA
p.A
V
rnA

RGK = lK, VOR ... = Rating
RGK = lK, VRR ... = Rating
RGS = lOOn, Vo = SV
RGK =lK

-

50

20
100

-

1.5

lK, VOR ... = Rating
lK, VRR ... = Rating
2V
10K, Vo = SV

RGS = lOOn, Vo = SV
IT = 1.0 A (pulse)
RGK = lK

V/p.s

2.0

10
30
0.2
0.4

Test Conditions

Note: Blocking voltage ratings apply over the full operating" temperature range. provided the gale is connected to the cathode through are·
sistor, 1000 ohms or smaller, or other adequate bias is used.

Gate Trigger Current
AA 107 Series

Gate Trigger Current

AA100 Series
80

.,:<...

I

!

60

~

40

::J

'"

20

:''"5

0

U

800

~

I
~

I

I

'"~

~

le.o MAX.

'""

~200~nir.h~~r.b7n+n~~~~77H

ffi

.8

...
'"~

.6

""0:

~"

0

"

·1

1

~~OOr----r--r--r--+--+--+--+~

25

so

75

100

125

0

150

-6'

JUNCTION TEMPERATURE (ee)

UNITRODE • SEMICONDUCTOR PRODUCTS.
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926.Q404 • FAX (617) 924-1235

..

>" .2

~L---~-L--L--L~--L--L~

0

1

0

0:

-

150

~ 1.2

"'"

u

-25

2.

50
100 12.
7S
JUNCTION TEMPERATURE (Oe)

I.'

!<

TJ

'
U

"z

RSK

~

:-- r-

.5

I
Z
~

-:1

g

ffi

-25
TJ

6~

~

~
o

.3

""-"'- ."'.
0-.'\
""- ",-"'"

I

j

.3

a:

U'

~

75

.3

.2

1

r.- ~

~~
6" ~"'-

~

"~":~

Z

~I

""

~
~~ ~

o

~~
~

.1

~~

"'~

90

100
T C ..a. -

110

120

130

140

I

125 150

POWER DISSIPATION (W)

"!

o

I

LJ

100

DC

.....2

,,~

.1

.....
I =:t--..,I

50

Ilq;-

:>

~

; ,

r

JUNCTION TEMPERATURE (OC)

-

PD-

:5,:.
r5
a:

.2

25

.4
.4

I'\.

~-

a:
a:

:>

~=?1
--+-

Avg. Current VS. Ambient Temperature

P~ER D~SSIPAT~ON (W)t

~ ~'\
.4

-

I

.05 I
-<;5

JUNCTION TEMPERATURE (OC)

5 PD -

r-

--r-_

AVI- Current VL Case Temperature
DC

'

lK

.2 RGI(:::;; 10K

_r.

~

IOOU

r

.1

.5

:::;;

9o

"'-

.05 LI_ _-'-----.JL---'-_'--.1._-'--..,"--.!
--65
-25
25
50
75 100 125 150
TJ -

AA114·AA118

"

o

lSO

o

25
TA .... -

MAX. CASE TEMPERATURE (Oe)

50

75

100

"

125

150

MAX. AMBIENT TEMPERATURE (Ge)

Surge Current
IT BEFORE SURGE:::;; 0

~
1

~

.5

~

: AFTER SURGE
.2 ~ DASH LINE:

~

.1·

~

~

~

I

J
.UNITRODE .. SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

,

~

~ :~~~~ING

TA :;;: lOO·C
Tc =100."C

. VOLTAGE MAY

I" BE APPLIED

BLOCKING VOLTAGE MAV

~~~O~~~~~~~~;~~g~

.05 1~-~

0.1 __+---1_-1

:0-. -:o~tO'---:-'-1-'-0--,:--"1--L'0--,LO'---"0'
SURGE DURATION (5)

9-32

.

PRINTED IN U.s.A.

ADIOO-ADI04
ADI07-ADlll
ADl14-ADl18

SCRs

1.6 Amp, Planar

FEATURES
• Maximum Gate Trigger Current: 2, 20 or 200pA
• Tight Gate Trigger, Voltage Range: .44 to .6V
• Voltage Ratings: to 400V
• Specified for dv/dt and Switching Time

DESCRIPTION
This data sheet describes Unitrode's AD Series 1.6A SCRs designed for mediumcurrent control and sensing applications. Units are available in a complete range
of blocking voltages from 60 to 400 volts.
The ADIOO series offers a maximum gate trigger current of 2.0 microamps making
it the most sensitive device of its type. The ADI07 series has a maximum IGT of
20pA while this parameter is specified at 200pA for the AD114 series.

ABSOLUTE MAXIMUM RATINGS
AD102
AD109
ADll&

AD10l
ADIOS
AD115

AD100
AD107
AD114

Repetitive Peak Off-State Voltage, VORM """""""""" 60V."".",
"
Repetitive Peak Reverse Voltage, VRRM
"""""""'" 60V"""",
"
Non-Repetitive Peak Reverse Voltage, VRSM
"" 80V.""
Non-Repetitive Peak Off-State Voltage, VOSM
D.C. On-State Current, IT
75"C Ambient "''''''''''
85"C Case ""
Repetitive Peak On-State Current, ITRM
""""""""""
Peak One Cycle Surge (Non-Rep.) On-State Current, ITSM "
Peak Gate Current, IGM '
Average .Gate Current, IGIAVj ,
Reverse Gate Voltage, VGR '"''
Operating and Storage Temperature Range
" """"""""""

AD103
ADll0
ADI17

200V"
,,,,,
200V""""",,,,,,,,,,,,,,,,
""
300V" " ,
""" ",,,,,,500V

100V."""
10ov.""",
150V,

AD104
ADll1
ADllS

300V".""".""".""",,, 400V
300V"""",,,,,,,,.,,,,,,,,, 400V •
400V""""""".""""." 500V .
"'"'' " """""'''''''' """ "

""".450mA",,:,
"'" "",,,1.6A.,,,,,,, """"""""""'"''''''''''''''''''''''''
""",up to 30A,
" ... ""15A""",,
" ,,,,,,,,,,,,,,,,250mA,,,,
""""",25mA""
"""",6V"""""
""""""'" '"'' ".-65"C to +150"C.",

MECHANICAL SPECIFICATIONS
AD100-AD104' A0107-ADll1

ADl14-AD118

TO-20SAD (TO·39)

CATHODE ,]=i~;M~'=Ii~~3
~

GATE

.30S-,335

7.75-8.51

.335-.370
.240-.260
.010-.030

8.51-9.40
6.35-6.60
.25-.76

.5 MIN.

017

ANODE

i .002
.001
200
100
03hOO3
029-045
100

12.70 MIN .

.432 t

:8~~

5.08

2.54
.79:t.08
.74-1.14
2.54

n nSEMICONDUCTOR
L::::J
PRODUCTS
9-33

_UNITRODE

•

ADlOO-ADI04 ADl07-AD111 ADll4-AD1l8
ELECTRICAL SPECIFICATIONS (at 25·C unless noted)
-,"

Parameter

SUBGROUP 1
Visual & Mechanical
SUBGROUP 2 (25·C TESTS) .
Off-State Current
Reverse Current
Reverse Gate Current
Gate Trigger Current
ADloo-l04
ADI07-111
ADll4-118
Gate Trigger Voltage
On-State Voltage
Holding Current
SUBGROUP 3 (25·C TESTS)
On-State Voltage-Critical Rate of Rise
Gate Trigger-on Pulse Width

Symbol

Min.

Typical

Max.

Units

-

0.44
-

-

-

-

.01
.01
0.1

0.1
0.1
0.2

pA
pA
pA

0.2
'2.0
20
0.52

2.0
20
200
0.60
1.5
2.0

IORM
IRRM
ISR
1ST

VST
VT
IH
dv/dt
tpg.(on)

Deii:lyTime

td

Rise Time
Circuit Commutated Turn-off Time
SUBGROUP 4 (125·C TESTS)
. Off-State Current
Reverse Current
Gate Trigger Voltage
Holding Current

t,
tg

1.1

0.3

0.5

50

100
0.5

-

pA
pA
V
V
mA

. 50

ii.6

RSK = 1K, VORM = Rating
RSK = lK, VRRM = Rating
VSR =2V
Rss = 10K, Vo = 5V

p.A

Rss = lOOn, Vo = 5V
IT = 1.0 Amp (pulse)
RSK = lK

Vips

RSK = lK, Vo = 30V
Is = lOmA, IT = lA, Vo = 30V
is = iiimA, iT = iA, Vo 3iiV
Is = 10mA, IT lA, Vo 30V
IT = lA, IR = lA, RSK = lK

pS

2.0

0.4
20

Test Conditions

I'S
pS
pS

=
=

=

pA
10
100
RSK =lK, VORM = -Rating
IORM
pA
RSK = lK, VRRM = Rating
30
100
IRRM
0.15
0.2
V
VST
Rss = lOOn, Vo = 5V
0.2
0.4
1.5
mA
RSK = lK
IH
Note: Blocking voltage ratings apply over the full operating temperature range, provided the gate is connected· to the cathode through a resistor, 1000 ohms

or smaller,

-

or other adequate bias is used.

Gate Trigger Current
AD100 Series
eo
60

!...

~ 40

::l

~

'"

~
u

20

ffi

g

Gate Trigger Current
AD107 Series

eoo

j5600

'"'"
ffi 400

~LL JNIT! FIRE

rt!h..

~

'f' MIN.

I

~200

WIIJ,

~I

~

INO UNITS FIRE

~-40

~LL ,NIT! FIRE

g

,:., MAX.

..~-20
I

0

!

~

I., .AX.
I., MIN.

-200

-\1,-60

INO UNITSFIRE

--65

-25
TJ

-

0

25

50

75

100

125

ISO

--65

JUNCTION TEMPERATURE ("C)

_ 1.2

.."

~

~0

I'M~+-+---;----t-+--+-t--I

g

>

..

200

I

0

~

ffi

..

.

..""... .

.... ..
""I

-"

~ r--~-+-+--+-t--+-~~

>'ij .2

0
--65

-25
TJ -

UNITRODE • SEMICONDUCTOR PRODUCTS
sao PLEASANT STREET· WATERTOWN. MA 02172
TEL (617) 926-0404 • FAX (617) 924-1235

ISO

Gate Trigger Voltage

...~ eoo f---+-+--+--+-+---+-t--I

~

,

~

I.'

~~O ~-+-+-+--+-+--+-t--I

::l

I

!

-25
0
25
so 75 100 125
TJ - JUNCT~ON TEMPERATURE (OC)

Gate Trigger Current
AD114 Series

ffi 400

~

I

-400

-eo

''""

I

9-34

0

25

SO

75

100

125

ISO

JUNCTION TEMPERATURE (OC)

PRINTED IN U.S.A.

ADIOO-ADl04 ADI07-ADlll AD114-AD118

Max. Holding Current
50

:t

..:5

.§

20

10

I

1

i--i--;..

RGK"~
'

,

I

0:
0:

I

::>

I

U

"z
§

2

!E

I

I--

lK

---

~ .5

i

:t

.S

-

r--_

~

--

0:

::>
u

"z
§

I-- r--

~

_::"-"10/f

~• • 2
x

I

-----t--~--~~--~~~~-­

.2

r-----""""--+---,---,---t--'f""""-i--d

Z

--- l"- I-- t-

:;

~

Min. Holding Current

I

i

I
_Yo

~ .l~::=+~~~~~--~-t~

.1

.05
-65

25
50
75 100 125
-25
T J - JUNCTION TEMPERATURE (Oe)

150
TJ

Ave. Current vo. Case Temperalure
Po -

Po -

..

.5

.7

....

DC

~
~

§

I.3.

u

"'
S
z
I

.4

"-

r-- r-70

80
Te .... -

(Oel

POWER DISSIPATION (WI

.8

.6

r---,---,-

f---+-T+

.4

r-r

.2
~-'--I

--t----~-~
,
:

~

::1

"'-

100

.----f----

~

110

I

"'

"-r-

Z

130

J.2 ~-i-t
.1

~

140

o

r---+-

L.-_ _- ' - - _ - ' - - _ . , .

150

25
50
75
100
125
ISO
TA .... - MAX. AMBIENT TEMPERATURE ('e)

..

Surge Current

~ 50
0:

~ 20

"'~ 10
~ 5
o
0:

N...........
I

~

1
.5

I

i

I

i

I

,

Te - 8S"C

>""'co

.

i

.1

I

J .05 10"",

I

i

~>'4=

i
!

0:

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STRF.ET· WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

",' I
i ~!

1

::>
"' .2

~

I
TT
i

""'l

I

2

~

~

j- -

L I_ - - ' - _ - - ' _ _ _

MAX. CASE TEMPERATURE ("e)

ei

---l

.3

o

~~
-...;:

120

u

~

-- --r--'"
.........

90

1

::>

""t"'---- ~
~

6.

t9 .8

o

~

"-

1.2

JUNCTION TEMPERATURE

Avg. Current vs. Ambient Temperature

POWER DISSIPATION (W)

1.5

~ 1.6

-

10

-.

10 -,

10 -,

10

-.

1

10

i

102

10l

SURGE DURATION (5)

9-35

PRINTED IN U.S.A.

GAIOO
GAIOI
GAI02

SCRs
Nuclear Radiation Resistant, Planar

FEATURES

DESCRIPTION

• Optimized for Radiation Resistance
• Fully Characterized for "Worst Case"
Design
• Post Radiation Design limits Specified
• Passivated Planar Construction for
Maximum Reliability and Parameter
Uniformity
• Pulse Currents: to 30A
• Max. Trigger Current 20mA after
3 X 10" NVT
• Max. Holding Current 30mA after
3 X 10 " NVT

The GA100 Series of Radiation Hard SCRs have been designed to provide
significantly greater radiation tolerance than conventional SCRs or Transistors with
the same current handling ability. This Series is capable of operation after exposure
to lOIS NVT.
The radiation resistant characteristics of the GA100 series devices make them
particularly desirable for use under radiation environments in squib firing circuits;
inverters and converters; pulse generators; relay drivers; and modulator discharge
switches.

ABSOLUTE MAXIMUM RATINGS
GA10l

GA100

GA102

.. .... 60V ............................ 80V
.. ............................ 30V .. .
Repetitive Peak Off-State Voltage, VDRM ....
D.C. On-State Current, IT
75'C Ambient ........
..................................................................
.. ...... 200mA .............................. ..
100'C Case ............................................................................................................................................400mA .............................. ..
Repetitive Peak On-State Current, ITRM ................................................
.. ... up to 30A ........................... ..
Surge (non-rep.) On-State Current, I TSM (Sq. Pulse-50ms) .........
.....................
........................ .. ............. 5A ....................................
Peak Gate Current, 16M ................................................................... ................................... ......................................
. ........ 250mA ............................... .

.

~~~:= ~:!: ~~I~:;:: ~:~Vl :::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::::~~~~.:::::::::::::::::::::::::::::::::
Reverse Gate Current, IGR ............................................................................................................................................................. 3mA ...................................
Storage Temperature Range ....................... .......................... ...............................................................
........ -65'C to +200'C.................... ..
Operating Temperature Range ......................................................................................................................................-65'C to +150'C .................... .

MECHANICAL SPECIFICATIONS
GA100

GA10l

GAl 02

TO-18

GATE

ANODE

A

INCHES
.178-.1950IA.

e

.170-.210

C

.5 MIN.
.209-.230 DIA.

0
E
G
H
J

017
.

i

.002 OIA.
.0010IA.

.020 MAX.
.lOO:t.010 DIA.

.04l:t.OO5
.028-.048

MILUMmRS
4.52-4.95 OIA.
4.31-5.33
12.70 MIN.
5.31-5.84 OIA.

.432

i

:~~

.508 MAX.

2.54:t254 OIA.
1.04:1:,127
.711-1.22

nn

SEMICONDUCTOR

~ PRODUCTS

9-36

_UNITRDDE

GA100

GA101

GA102

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)

Test

Min.

SUBGROUP 1
Visual and Mechanical
SUBGROUP 2 (2S'C Tests)
Off-State Current
Reverse ·Gate Current
Input Trigger Current (Note 2)
Gate Trigger Voltage
On-State Voltage
Holding Current
SUBGROUP 3 (2S'C Tests)
Off-State Voltage-Critical Rate of Rise
Gate Trigger-on Pulse Width
Delay Time
Rise Time
Circuit Commutated Turn-off Time
SUBGROUP 4 (125'C Tests)
High Temp Off-State Current
High Temp Gate Trigger Voltage

IDRM
IGR
1ST
VGT
VT
IH
dVcldt
tpg (on)
td
tr
tq
IDRM
VGT

Post 3 )t' 10 14
NVT Design

Preradiation
Limits

Symbol

Typ.

limits
Max.

Min.

Max,

Units

Test Conditions

-

-

-

-

-

-

MIL-STD-7S0
Method 2071

-

.OOS
.01
2.3
O.S
1.1
0.7

0.1
0.1
3.S
0.7
1.S
10

-

1.0
1.0
20
1.5
3.0
30

I'A
I'A
rnA
V
V
rnA

RGK
220n, VDRM
Rating
VGR
2V
RGK
220n, Vo
SV
RGK
220n, VD SV
iT
lA (pulse test)
RGK
220n

-

-

0.1

-

viI's
I'S
I'S
I'S
I'S

100

I'A
V

1.8
0.4
0.8
0.3
20

-

-

-

0.1

40
.02
.02
.05
1.5
10
.17

.OS

-

2.5
100

-

-

0.1

1.0

-

=
=
=
=
=
=
=
=
=
RGK = 220n, Vo = 30V
IG = 25mA, IT = lA, Vo = 30V
IG = 2SmA, IT = lA, Vo = 30V
IG = 25mA, IT = lA, VD = 30V
IT = lA, iR = lA, RGK = 220n
RGK = 22011, VDRM = Rating
RGK = 220n, Vo = 5V

Notes: 1. Off-State voltage ratings apply over the operating temperature range provided the gate is connected to the cathode through an
appropriate resistor, or other adequate bias is used.
2. Tolal Input Trigger Current, including current required by 2200 gate bias resistance.

DESIGN CONSIDERATIONS
1. Curve 1 shows the off-state current, IORM of the SCR as a function of temperature. IDRM is increased by radiation damage,
but is not a design consideration at the recommended gate bias levels.
In order to optimize for radiation tolerance, reverse blocking capability has not been retained as a design feature. Devices
with reverse blocking capability can be provided.
2. Minimum critical dvldt levels are defined in Curve 2. The dv/dt capability is improved after radiation because of reduced
triggering sensitivity. dv/dt is therefore a design consideration only prior to radiation.
3. Curves 3 and 4 show the limits of Gate Trigger Voltage and Total Input Trigger Current prior to radiation. Maximum design
limits after a total radiation dosage of 3 x 10" NVT is also shown. Curves 5 and 6 show the maximum limits of Gate
Trigger Voltage and Total Input Trigger Currents as a junction of neutron dosage. The minimum level of Trigger current
prior to radiation is established by the shunting effect of a 220 ohm resistor between gate and cathode. After radiation
the device is less sensitive and Total Trigger Current will increase to a level relatively independent of the bias resistance.
The 220 ohm resistor is recommended since it raises the minimum preradiation trigger current to a level that is closer to
the past radiation limit and minimizes the percentage change in this parameter.
4. Current ratings shown in Curves 10, 11, and 12 apply after the device has been subjected to 3 x 10 14 NVT. Current ratings
prior to radiation are greater than the values indicated.
5. Gamma radiation produces a reversible ionization (leakage) current within the device which is directly proportional to the
Gamma flux level. When the Gamma flux level is in the range of 10 to 100 Roentgens per microsecond for burst durations
greater than 1 microsecond, the device will self trigger ON. For the radiation bursts associated with nuclear explosions,
the Gamma flux level will invariably cause device triggering at radiation levels significantly below the levels that would
produce detectable permanent device damage due to cumulative neutron dosage. In applications where the burst effect
triggering cannot be tolerated, it is necessary to reset the device after the radiation burst. Special circuit approaches such
as additional SCRs to c.rowbar or otherwise cancel the output function may be used.

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN. MA 02172
TEL. (617) 926.()4Q4 • FAX (617) 924·1235

9-37

PRINTED IN U.S.A.

GAlOO
1.

SOD

1000 , - - - - , - - - - , - - - . , . - - - - - , - - - 7 " 1

RGK

!z
~

10~--~-~

0::

:>

"
OJ

:s~

~"

100

b
~

50

..J

1.0

0.1

=
Z

~

::i

''~""

0.5
10 10

Gate Trigger Voltage

=

Vo

'"

5V

OJ

f-..:...-+-+--j---j--j--j--j--I

0::
OJ

'"
...'"0:
...

a.

1.0

~=:-11-

:;

0.5

F~"..-t-:'~iIS:~~~*~l:"<'~~=±::::-I

...0

5V

SO

-65

OJ

'"«...

=

..J

RG,

3.0

= 220P.

200

Max. Gate Trigger Voltage
vs. Neutron Dosage

3.5

~.

Vo

JUNCTION TEMPERATURE ('C)

-

1016

:> 100
u

:>

-25

10 15

0::
0::

1.5 f---+-+:::::"~:"::'

TJ

RGK

E.

...
z

2.0 t--.-:--+-~I--I--+-+-+--+---I

I

>~

10 14

1000

OJ

!<

1013
NVT

Input Trigger Current

;t 500

= 220n--+--+--j

2.0 f - - - + - + - RG,
3.5

1012

1011

4.

,.---,--.---,---,--,--r--,----,

IJJ

'"

~

L

-V

+d5°C

JUNCTION TEMPERATlIRF (OC)

3.

V

::;;

.001 '--_ _L-_ _L-_ _L-_----''--_--'
125
25
50
75
150
100

~

--

10

L

::;;

j .Ol~-~~--_1---+----r--~

3.5

--------

l

25 C

20

:>

,;-",,/'1'

T, -

GA102

2200

-6h·c

"::;;

1--=-+--

I

I
=

r-- Vo = 30V
\.

'iii' 200

~ 100

GA10l

Minimum Critical DV/DT
vs. Neutron Dosage

2.

Off·State Current

1011

----

10 12

zOJ

...

100

0::
0::

50

VI
...-/'

"
''"0:"
...

.........-

:;

1013
NVT

0::
OJ

VI

.-/

UNITROOE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

20
10 - _ 6 5 ' C

...
:>

===1 25oC

a.

V

1014

1

X

+125'C
2

«
::;;
10 15

LL

:>

0.5
1010

10 16

9·38

1011

--

1012

//

/
./

/

V

1013
NVT

101"

10 15

10 16

PRINTED IN U.S.A.

GAlOO
Holding Current

1.

GAlOl

GAI02

8. Max. Holding Current vs. Neutron Dosage
500

<:

g

<:

200

I-

Z

g

100

\oJ

0:
0:

I-

Z

\oJ

0:
0:

::>
u

::>
u

50

'"z0

20

0

10

'"o

...J

o

«
::;;

z

:x:
X

...J

:x:

I

/.

.--/

-65"C

V

+125"C

./"

I

-'

//

.../ /

+25"C

-'

X

«
::;;

RGK = 220H

1.0
0.5

-25
TJ

-

so

25

75

100

125

150

1011

10 10

P, 50

~
\oJ

'"
!:i
«

0

20

I-

10

0:
0:

Z

\oJ

5.0

>

r----

I,

=

,/
5.0A

~ 2.0

I-

en

r---- -IF

~. 1.0

::>

u

LOA

10 16

.'"

POWER DISSIPATION (W)

0.4

0.2

0.3

0.1

50
20
10

\oJ

---- ~

\oJ

10 15

10 14

10. Peak Current vs. Ambient Temperature

9. Max. On·State Voltage vs. Neutron Dosage

~

lOll
NVT

10 12

JUNCTION TEMPERATURE ("C)

I-

~
"I

.- .,,/

0

z

2.0

""

1.0

«
\oJ

IF - O.IA

5.0

Il.
U.I

> 0.5

>=
>=
\oJ

0.2

Il.

O.i

\oJ

0:

.05
1010

0.1

I

1011

' 1012

lOll

1014

1015

J

1016

.05

T, ... -

12.

11. Peak' Current vs. Case Temperature

~

p. 0.5

so

0.4

0.3

0.2

50

0.1

Z

0:
0:

::>
u

~

20
10

\oJ

I-

zU.I

10

0:
0:

5.0

\oJ

2.0

::>
u

0

2.0

«
""\oJ

'::>en"

1.0

en

Il.
\oJ

>
>=
>=
\oJ

Il.

0:

'"\oJ
«
I

1

0.2

I

0.1

1

.05

1.0
0.5

Il.

0.5

0.2

I,

1SO

'"1"'"- "

BE~ORE ~URG~ = a

~.

,

SOLID LINE, RATED ' " '
BLOCKING VOLTAGE
MAY BE APPLIED AFTER
SURGE

r-,

-

r--.:'

DAS~ LINt Bl(jCKIN~ VOLTAGE
MAY NOT BE SUSTAINED
FOR1'1 SECONDS AFTER SURGE

0.1

\oJ

0:

125

100

Surge Current vs. Time

~ ",,

20

I-

5.0

~
Z

75

MAX. AMBIENT TEMPERATURE ("C)

POWER DISSIPATION (W)

I-

\oJ

so

25

0

NVT

Tc~ 100"C

T,=~

.05
10-"
90

100
Tc ... -

110

120

130

140

1SO

10-'

10"

10-2 10-'

1

10

10'

10'

SURGE DURATION (s)

MAX. CASE TEMPERATURE ("C)

UNITRODE • SEMICONDUCTOR PRODUCTS
5BO PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

9-39

PRINTED IN U.S.A.

SCRs

GA200.
GA200A
GA201
GA201A

Nanosecond- Switching, Planar

GB200
GB200A
GB201
GB201A

FEATURES

DESCRIPTION

•
•
•
•
•

The Unitrode Nanosecond Thyristor Switch combines the turn-on'speed of logic
level transistors with the high current switching capability inherent in SCRs. With
this device engineers can now design circuits capable of switching pulse currents of
1A in less than IOns or up to 30A in less than 20ns.

Rise Time: IOns
Delay Time: 10ns
Recovery Time: 0.5 I'S
Pulse Current: to 100A
Turn-on with 20ns, 10 rnA Gate Pulse

The GAlGB200 series is specifically designed for use as switching elements in high
speed, low-to-medium power radar pulse modulators. Other applications include .
switching elements for phased array radars, laser pulse drivers, harmonic wave-form
generators, line drivers and high current replacements for avalanche transistors.
For applications requiring higher voltage levels, Unitrode has developed several
"series string" circuits which allow the series connection of virtually an unlimited
number of devices for voltages as high as 2000V with no significant decrease in
speed. These circuits are described in Unitrode's,Design Note #14.

ABSOLUTE MI'.X!MUM RATI~~GS

UA2UU
GA200A

GA20l
GA20lA

GB200
GB200A

GB20l
GB20lA

Repetitive Peak Off·State Voltage, VDRM .. ................. 60V ................ lOOV ..
..lOOV
." ... " .. 60V.
Repetitive Peak On-State Current, ITAM
.... up to lOOA
. upto 100A
D.C. On-State Current, IT
70°C Ambient.
.200mA,.
70°C Case.
.. 400mA,
6A
Peak Gate Current, IGM
.. ................ 250mA
, . , , .... , . , , . , , ... , .. , ... , .. , , ...... , 250mA
Average Gate Current, IG(AV) .
. 25mA ..
.,.........................
50mA, .
Reverse Gate Current, lOR. . .
. .............. .
, ............... 3mA
............ ", ..... 3rnA ....
Reverse Gate Voltage; VGR ....
..5V
.. .. 5V .
. 300°C/W.
Thermal Resistance,' Re CA.
. .......... .
Storage Temperature Range .......................... .
, . -65°C to +200°C.
Operating Temperature Range
.. ..... , ......... : ...... , -65°C to +150°C

MECHANICAL SPECIFICATIONS
GA200

GA200A

GA201

GA201A

TO-18

GATE

A
8
D

INCHES
.178-.195 CIA.

MILLIMETERS
4.52-4.95 CIA .

.170-.210

4.31-5.33

.5 MIN.
.209-.230 DlA.

017 ± .002 CIA.
.
.0010IA.
.020 MAX .

H

.100:1:.010 OIA.
.04U.OO5
.028-.048

G8200

r-

G

G8200A

12.70 MIN .
5.31-5.84 DIA .

.432 ± :g~g
.508 MAX.

2.54:1:.2540IA.

l.04:t.127
.711-1.22

G8201

G8201 A

TO-59

->i

F_... '.',H ~~~IN~C~HE=S==~~Mgl~LL~IM~n~EERs~

CATHODE

~

G

"..OTE: Anode connected to case.

.400 ,455
.090-.150

10.16 11.56
2.28 3.81

.424-.437
.185 .215

4.70-5.46

nn

L..::::J
9-40

SEMICONDUCTOR
PRODUCTS

_UNITRODE

GA200 GA200A GA201 GA201A
GB200 GB200A GB201 GB201A

ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Symbol

Test

Delay Time

td

Rise Time GA200, 200A, GB200, 200A

t,

Rise Time GA201, 20lA, GB201, 20lA

t,

Typ.

rAin,

Units

30

ns
ns

IG == 20mA, IT == lA
IG == 30mA, IT == lA

ns
ns

Vo == GOV, IT == lA (l)
Vo == GOV, IT == 30A (1)

ns
ns

Vo == lOOV, IT == 1A (1)
Vo == 100V, IT == 30A (1)
IG == lOmA, IT == 1A

-

20
10

-

-

15
25

-

-

25

10
20

-

Test Conditions

Max.

20

-

t p9 !on)

-

.02

.05

/,S

tq

-

0.8

2.0

1,5

tq

-

0.3

0.5

I'S

0.1

/'A

VoRM == Rating, RGK

10RM

-

.01

Off-State Current

20

100

I,A

VoRM == Rating, RGK == lK,
l50'C

Reverse Current

IRRM

-

1.0

10

mA

VRRM == 30V, RGK

Reverse Gate Current

IGR

-

.01

0.1

mA

VGRM == 5V

Gate Trigger Current

IGT

-

10

200

I,A

Vo == 5V, RGS

0.4

.6

0.75

V

Vo == 5V, RGS == lOOn, T == 25'C

0.10

0.2

-

V

T== +150'C

Gate Trigger on Pulse Width
Circuit Commutated Turn-off Time
GA200,.201, GB200, 201
GA200A, 20lA, GB200A, 201A

Gate Trigger Voltage

VGT

On-State Voltage

VT

Holding Current

IH

Off-State Voltage-Critical Rate of Rise

dv/dt

IT == lA, I"

== lA, RGK == lK
== lK

== lK (2)

== 10K

-

1.1

1.5

V

IT

== 2A

0.3

2.0

5.0

mA

Vo

== 5V, RGK == lK, T == 25'C

0.05

0.2

-

mA

T == +150'C

20

40

-

V/"s

Vo

== 30V, RGK == lK

Notes: 1. IG :::::: IOmA; Pulse Test, Duty Cycle <1%.

2. Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the
Reverse blocking mode on a continuous basis.

Switching Speed (Typical)
GAl G8200 Series

Peak Current vs. Pulse Width
GA200 Series

1000 r - - - - - , - - - - - - - . , - - - - - - - ,

$1000
I-

Z

UJ

c:
c:
::>
u
UJ

S

DUTY CYCLE =.005%

100

'"
Z

'"

;;j
a.
~

;::

OUT
~UTYCYCLE
.0001%
Y CYCLf: '" 0 ~
DR LESS

.1% _____

o

g~~~ g~gt~ _.~;;;:----.l
10

DUTY CYCLE _ 5%-'"

UJ

c:

1

~

___

~

.1
Ir -

_ _ _ __ L_ _ _ _

10
ANODE CURRENT (A)

,

~

tp -

NOTES: 1. V D = Rated VOR.M

10
PULSE WIDTH (ps)

100

NOTES: 1. DATA BASED ON ON-STATE
VOLTAGE GRAPH AT T; = 150'C.
BLOCKING VOLTAGE MAY BE
APPLIED IMMEDIATELY AFTER
TERMINATION OF CURRENT
PULSE.
2. TA
75'C

2. T.==25'C
3. IG == 20mA
4. td == 20n5 TYPICALLY FOR ALL
TYPES INDEPENDENT OF ANODE
CURRENT

UNITRODE • SEMICONDUCTOR PRODUCTS
5BO PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926·0404 • FAX (617) 924-1235

DUTY CYCLE 110%-'

1
.1

100

-=

DUTY CYCLE - .5~.J
DUTY CYCLE = 1%

ti

a.

I

~

=

9-41

PRINTED IN U.S.A.

GA200 GA200A GA20l GA20lA
GB200 GB200A GB20l· GB201A

Peak Current vs. Pulse Width
GB200 Series
51000

!z...
a:
a:

:>

<>

...

!;:
...

100
.

III

z

o
n.

~

;::

~

...51000

IT

z...
a:
a:

:>

...<>

DUTY CYCLE= 1%
DUTY CYCLE .1% OR LESS
DUTY CYCLE
.5%
DUTYCYCL
DUTY CYCLE
DUTY CYCLE

'"jj

Peak Current VS. Pulse Width
GB200 Series

!;:
.... 100

"'oz

jj

10%-"1

n.

~

10 DUTY CYCLE - 20~::J
DUTY CYCLE = 50%

~

;::

.1%-"

--

~

DUTY CYCLE _ 5%-"
DUTY CYCLE.,. 10%.J"

1iJ

a:

J 1.iL---------L---------1Lo--------~100
tp -

.001%
OR LESS
DUTY CYCLE

g~~~ mt~ = is:.' J

10

~

I

I

0:

DUTY CYCLE

DUTY CYCLE

'"

5

DUTYCYCLE=.05%

!----:.t.

1'----------l.--------..I...--------'
,1

1

tp -

PULSE WIDTH (ps)

NOTES: 1. DATA BASED ON ON·STATE
VOLTAGE GRAPH AT T; = lSO'C.
BLOCKING VOLTAGE MAY BE
APPLIED IMMEDIATELY AFTER
·TERMINATION OF CURRENT
PULSE.
2. Tc =75'C

10
PULSE WIDTH (ps)

100

NOTES: 1. DATA BASED ON ON·STATE
VOLTAGE GRAPH AT T; = lSO'C.
BLOCKING VOLTAGE MAY BE
APPLIED IMMEDIATELY AFTER
TERMINATION OF CURRENT
PULSE.
2. TA = 75'C

On·State Current VS. Voltage
GA/GB200 Series

• Surge Rating Maximum
GA/GB200Series

...5
...a:z

100

a:

:>

<>

...5
...za:

......
0:

III

10

Z
0

a:

:>

'"jj
...n.>
;::
...;::n.
...a:

......<>
0:
'"z0
I

..:

100

10

Z

0
Z

I

.1
.1
VIM -

10
ON·STATE VOLTAGE (V)

J

100

tp -

10
PULSE WIDTH ("s)

100

NOTES: 1. BLOCKING VOLTAGE MAY NOT BE
APPLIED FOR .001 SEC: AFTER
TERMINATION OF SURGE PULSE
. AS JUNCTION TEMPERATURE
WILL EXCEED lSO'C.
2. T c =75'C

CHIP
THICKNESS

."orr

UNITRODE • SEMICONDUCTOR PRODUCTS
'580 PLEASANT STREET. WATERTOWN, MA 02172
TEL. (617) 926.Q404· FAX (617) 924·1235

METAlllZ/ILTION
mp .... AI.
SACK .•• AU

9-42

PRINTED IN U.SA

SCRs

GA300
GA300A
GA301
GA301A

Commercial Nanosecond Switching
Planar
FEATURES
• Rise Time: 10ns
• Delay Time: 10ns
• Recovery Time: O.Sps
• Pulse Current: to 100A
o Turn-on with 20ns, lOrnA gate pulse

G8300
G8300A
G8301
G8301A

DESCRIPTION
Unitrode's Nanosecond Thyristor Switch combines the turn-on speed of logic level
transistors with the high current switching capability inherent in SCRs_ With this
device, engineers can now design circuits capable of switching pulse currents of
lA in less than IOns or up to 30A in less than 20ns.
The GA300, GB300 Series is specifically designed for use as the switching element
in high speed laser diode pulse drivers. Other applications include electronic
crowbars, harmonic wave-form generators, line drivers and general purpose replacements for avalanche transistors. For applications requiring higher voltage levels,
Unitrode has developed several "series string" circuits which allow the series connection of an unlimited number of devices for voltages as high as 2000V with no
significant decrease in speed. These circuits are described in Unitrode's
Design Note #14.

ABSOLUTE MAXIMUM RATINGS
GA300
GA300A

Repetitive Peak Off-State Voltage, VORM
Repetitive Peak On-State Current, ITRM
Peak Gate Current, IGM .
Average Gate Current, IG(AVI .
Reverse Gate Current, IGR ..
Reverse Gate Voltage, VGR .
Storage Temperature Range
Operating Temperature Range

GA301
GA301A

G0301
G0301A

G0300
G0300A

. ....... 60V ...

lOOV ....
................. 60V......... ..
. ..... lOOV
.up to 100A .. .
. ...............up to lOOA ..
........ 2S0mA .. .
....... ........ ......
...... ........... 2S0mA ... .
.. ..2SmA ..
.. .. ....... ........................ SOmA ..
.. ... .3mA...................................
................ 3mA ...

.

.................... W........................

.. .......

W ..

........ -65'C to +lSO°C ..
...................... O°C to +12SoC.

MECHANICAL SPECIFICATIONS
GA3DD GA3DOA GA3Dl

GATE

. 5

_L

0

INCHES
.178-,195 DIA .
.170-.210
.5 MIN.
.209-.230 DIA.

017

.

±

.002 DIA.
.001 DIA.

.020 MAX.
.100t.010 DIA.

H

.O4l±.OO5

.028-.048

C

!

B"",:'

TO-18

MILLIMETERS
4.52-4.95 OIA.
4.31-5.33
12.70 MIN .
5.31-5.84 DIA .

.432 ±

:g~~

.508 MAX.
2.54t.254 DIA .
1.04:t.127
.711-1.22

GB3DD GB3DDA GB3Dl

rA --+ -I
-

GA3D1A

GB3D1A

TO-59

D -----1
----t>j

r-

I

i

F

G

--i

I

INCHES

CATHODE$'
.. __ T!.H
GATE
•
ANODE-

A

o
G

.400 .455
.090-.150

.320-.468
.570-.763
.318 .380
.424-.437
.185-.215

MILLIMETERS
10.16-11.56
2.28 3.81
8.13 11.88

14.48-19.38
8.07-9.65

10.77 11.10
4.70-5.46

NOTE: Anode connected to case.

n
n
L.:=J

SEMICONDUCTOR
PRODUCTS

1/79

9-43

_UNITRODE

GA300, GA300A, GA301 , GA301A
GB300, GB300A, GB301, GB301A

ELECTRICAL SPECIFICATIONS (at 25°C unless noted)
Symbol

Test

Delay Time

td

Rise Time (Note 1)
GA300, 300A, GB300, 300A

t,

Rise Time (Note 1)
GA30l, 30lA, GB301, 301A
Circuit Com mutated Turn-off Time
GA300, 301, GB300, 301'

Min.

Typical

Max.

-

20
10
15
25
10
20

30

-

t,

-

tq

Off-state Current

IORM

Reverse Current (Note 2)

'RRM

-

Gate Trigger Voltage

VGT

0.4
0.10

Galt:! Trigger Current

iGT
VT
dvldt

GA300A, 30lA, GB300A, 30lA
Gate Trigger·on Pulse Width

tpg (on)

On-state Voltage
Off-state Voltage - Critical Rate of Rise
Reverse Gate Current
Holding Current

15

IG'

-

'H

0.3
0.05

Units

Test Conditions

-

ns

0.8

2.0

pS

=
= 1A
=
= 1A
lA
=
= 30A
lA
=
= 30A
'T = lA, I, = lA, RGK = 1K

0.3

0.5

pS

'T - lA, I, - lA, RGK _ 1K

0.02
0.01
20
1.0
0.6
0.2
iO

0.05
0.1
100
10
0.75

1.1

1.5

30
0.01
2.0
0.4

0.1
5.0

pS
pA
pA
rnA
V
V
p.A·
V
Vlp.s
rnA
rnA
rnA

IG
20mA, IT
IG
30mA, IT
Vo - 60V, 'T Vo
60V, 'T
Vo - 10OV, 'T Vo
100V, 'T

ns

-

25

ns

20

ZUU

-

(Note 1)
(Note 1)

= lOrnA, 'T = 1A
- Rating, RGK _ 1K, T _ 25°C
= Rating, RGK = lK, T = 125°C
(Note 2)
= 30V, RGK = 1K
5V, RGS _ 100f!, T _ 25°C
= 5V, RGS = 100f!, T = 125°C

IG
VO'M
VO'M
VRRM
Vo Vo
Vo -

5V, RGS - 10K

'T - 2A
Vo - 30V, RGK - 1K
VGR - 5V
Vo - 5V, RGK _ lK, T _ 25°C
Vo
5V, RGK
lK, T 125°C

=

=

=

=

Notes: 1. IG
lOrnA; Pulse Test, Duty Cycle < 1%.
2. Pulse test intended to guarantee reverse .anode voltage capability for pulse commutation. Device should not be operated in the
verse blocking mode on a continuous basis.

Switching Speed vs. Current
GA/GB300 Series
1000

'"
.3
OJ

Peak Current vs. Pulse Width
GA300 Series
~1000
Notes: 1. Data based on On-State Voltage
~
graph at T; = 125°C:
OJ

.------,-------,--~~__,

Notes:

1. Vo
2. T,

=.Rated V
= 25°C

ORM

=,

B!ocking Voltage may be applied

0:
0:

3. IG
20mA
4. to = 20n5 typically for all types
independent of anode current.

immediately after current pulse
termination.

:J
(J

OJ

2. T,

:E 100 f - - - - - - - f - - - - - - - + - - - - - - - 1

t-

;::

~ 100

OJ

rn

Z

..J

«
'"OJ

.05~5
a.
.1%
OJ
> 10 .5%-'"
;::

<3
~

10 t:==~~--t-~~--~-r---------l

I

5a.
I

J

~~
......"

10%. .
1

.1

10
Tp -

9-44

= .0001% or less

5%-..

0:

1 '------'-------'--------'
.1
10
100
IT -ANODE CURRENT (A)

"Duty Cycle

1%-1"

OJ

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET • WATERTOWN, MA 02172
TEL. (617) 926-0404. FAX (617) 924·1235

= 75°C.

r--::::::-

.01 % ..-L.005%

o

;;:
ii:

re~

PULSE WIDTH

100

(~s)

PRINTED IN U.S.A.

GA300, GA300A, GA301, GA301A
GB300, GB300A, GB301, GB301A

Peak Current VS. Pulse Width
GB300 Series

Peak Current vs. Pulse Width
GB300 Series

:!)ooo

...z

$1000

...z
'"

Notes: 1. Based on On·State Voltage
graph at T j 125°C.
Blocking Voltage may be applied

=

'"0:0:

::J
U

immediately after CUlent pulse

lO/Vo-=;l

=

termination . .

'"!;: 100 .5%, 2. Tc = 75°C.
v-Duty Cycle = .1% or less
lii
z ~
~
o

"' 100
!;:

'"O'i

'O'"i

~

5%
10%-"

0.

'">
;:

10

=

...oo

Z

0.

::::

'">
;:

50%-"'"

1%

10

5%

;:

t;;
'"0:

10%

'"
'"
0.

0.

0:

I

I

1

J

1
.1

10
Tp -

100

50%
1
.1

l;;1000

Notes: 1. Blocking Voltage may not be

'"0:0:
::J
U

'"
!;:
t;
Z
o

10

::J
U

'"...

'O'"i

Z

"'>
;:

I

0.

100

Surge Rating
GA/GB300 Series

$

100

'"0:0:

10
PULSE WIOTH <.5)

Tp -

PULSE WIDTH <.5)

On-State Voltage VSo Current
GA/GB300 Series

...$z

-+____

Duty Cycle:::::: ,DOl % or less

o

i"!!O!o.

20%-

Notes: 1. Based on On·State Voltage
graph at T j 125°C.
Blocking Voltage may be applied
immediately after current pulse
termination.
2. TA
75°C. _ _ _
---j

0:
0:
::J
U

~

100

applied for O.ls after termination
of surge pulse as junction
temperature will ereed 125°C.
2. TA
75°C.

=

"J---

.

Non.Repetit~ve Peak curr~

0.

...oo

«

t;;
'"0:

0

.:

10

Z

o
z
I

.1
.1

10
V,M-ON-STATE VOLTAGE (V)

UNITRODE ° SEM)CONDUCTOR PRODUCTS
580 PLEASANT STREET ° WATERTOWN. MA 02172
TEL. (617) 926.()4(J4 ° FAX (617) 924·1235

].

100

1

.1

10
Tp -

9-45

100

PULSE WIDTH (.5)

PRINTED IN U.S.A.

10100·10106

SCRs
.5 Amp, Planar
FEATURES
• Voltage Ratings: to 400V
• Maximum Gate Trigger Current: 200l'A
• Hermetically Sealed TO-18 Metal Can
• Planar Passivated Construction

DESCRIPTION
This Data Sheet describes Unitrode's line of hermetically sealed industrial SCRs
designed for low-voltage, low-current sensing application. The 10100 Series is
packaged in a TO-18 metal case with Unitrode's unique oxide passivated
junctions, offering the highest degree of reliability and parameter stability for
any device in its price range.
Typical applications include lamp driving, relay driving, sensor, pulse-generating
and timing circuits.

ABSOLUTE MAXIMUM RATINGS
10100

10101

10102

ID103

ID1D4

10105

ID1D6

Repetitive Peak Off-State Voltage, VDRM ....
• 30V ..
GOV ............ 100V.... .
150V ............. 200V. ........ ... 300V.
400V
Repetitive Peak Reverse Voltage, VORM ' .................. 30V
..... GOV ............ 100V... .
150V............. 200V.
.. 300V. ........... 400V
On-State Current, IT
75·C Ambient .
....................................... .250mA ..
100·C Case
.... 0.5A
Repetitive Peak On-State Current, I TOM .'
...............•......
. ........ 6A .. .
Peak One Cycle Surge (Non-Rep.) On-State Current, I TSM .
. .... up to 30A
Peak Gate Current, IGM
.............. 2SOmA ..
Average Gate Current, IGjAVI
............... 25mA .............................. .
Reverse Gate Voltage, VGR .. .•....... ..... ............ ............
.. .... ... .... ............
....••6V .... .
Storage Temperature Range
............. . .......... ............................. . ................... -65·C to +150·C .. .
Operating Temperature Range.........................
...... -G5·C to +125·C ... .

MECHANICAL SPECIFICATIONS
ID100-ID106

r+ j
-'-[1='-'
=
c

B

A

~

G.1+=«

GATE

90'::':::5"
CATHODE

-

0

~~F

~~

E

TO-18

45'

== 5'

•
..... ....

'-J..' \
\Y-l . . ~'

:r't~J

90'::,::: 5'

_L

ANODE

A

INCHES
.178-.195 DIA.

MILLIMETERS
4.52-4.95 OIA.

B
C

.170-.210

D

5.31-5.84 DIA.

E

209-.230 DIA.
017 ± ,002 OIA.

.

F

.020 MAX.

G
H
J

.100±.OlO OIA .

.508 MAX.
2.54%.254 DIA.

.041:1:.005
.028-.048

1.04:1:.127
.711 1.22

.5 MIN.

4.31-5.33
12.70 MIN .

,00101A .

.432 t

:~~

nn

9-46

L.:::=:J

SEMICONDUCTOR
PRODUCTS

_

UNITRc:iDE

10100-1D106
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

Off-State Current

IDRM

Reversing Current

IRRM

Gate Trigger Current

IGT

Gate Trigger Voltage

VGT

Peak On-State Voltage

VTM

Holding Current

IH

Turn-on Time

to,

Circuit Commutated Turn-off Time

tq

Min.

Typical

Max.

. Units

5.0
10.0
10
15
5.0

50
100
50
100
200
500
0.8
1.0

1.7
5.0
10.0

pA
pA
pA
pA
p.A
p.A
V
V
V
V
mA
mA

-

ps
p's
p's

-

-

0.4
0.10
-

1.0
-

0.55

0.5
8.0
15.0

-

Test Conditions

VDRM - Rating, RGK _ 1K, T _ 125'C, 1D100-10104
VDRM == Rating, RGK == 1K, T == 125'C, 1D105-10106
VRRM - Rating, RGK - 1K, T - 125'C, 10100-10104
VRRM == Rating, RGK == 1K, T == 125'C, 1D105-10106
VD - 5V, RGS - 10K
VD == 5V, RGS == 10K, T == -40'C
VD == 5V, RGS == lOOn
VD == 5V, RGS == lOOn, T == -40'C
VD == 5V, RGS == lOOn, T == 125'C
ITM == 1 Amp Pulse
RGK _lK
RGK == 1K, T == -40'C
IG - lOmA, IT - lA, VD _ 30V
IT - IR - lA, RGK _ 1K, 10100-10104
IT == IR == lA, RGK == 1K, 10105-10106

Nate: Blocking voltage ratings apply:over. the full operating temperature range, provided the gate is connected to the cathode through a
resistor, 1000 ohms or smaller, or other adequate bias is used.

Gate Trigger Current vs. Junction Temp.

;;
.:;

...

Gate Trigger Voltage vs. Junction Temp.
1.4

3

~ 1.2

z

UJ

UJ

~

0:
0:

:>
U
0:

"0:"

0:

~~__

...

~

"...0:

afed~

UJ

!;:

."

~

~~6

UJ

:::::-::::.

UJ

5

..J

~

II.

..J

~
0::

-i

~

I

>

...

.

.8

..........

.6

~
Rated Vo

.4

>'iD
-65

-25
Tj -

r"......;
.2

0

25

50

75

100

125

ISO

'

0

-65

-25

JUNCTION TEMPERATURE ('C)

TJ

-

Holding Current vs. Junction Temp.
1000

;; 20

~

oS
0:
0:

5

~

2

:>
u

C
..J

1~_~01l

r- r-1~=lKn

o

:I:

;i

.5

0::
~

.2

u

I
_r.

.1

RGK

= lOKI!

I-.::.:.......J.

.05
-65

I"'-

---

---- --....

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA 02172

"'\

'f"..
.......

'\

Vo - Rated

......

I

b

"' " r-...
"I'-.

"'...." r--.....

-......

-25
25
SO
75
100 125
T, - JUNCTION TEMPERATURE ('C)

ISO

....... r--,

'\.

........

TEL (617) 926·0404 • FAX (617) 924·1235

25
SO
75 100 125
JUNCTION TEMPERATURE ('C)

dv/dt vs. Junction Temp.

50

10

Vo = 6V
~ r.:::;

I

_'iD-2

!zUJ

~ I=::::,...

1
-65

150

9-47

RGK -

VORt.!

r

1001l

l

--rRGI(

RGK

lKn

= 10KIl

"-.l

I

-25 0
25
50
75 100 125
TJ - JUNCTION TEMPERATURE ('C)

ISO

PRINTED IN U.S.A.

IDIOO-IDl06

Gate Pulse for Turn-On

vs. Pulse Gate Current

10

= lA, Vo =

1. IT

1\

:i!~

::l-

2. TA

Rat~d

Circuit Commutated
Turn-Off Time vs. Junction Temp.

VORI.4

= 25'C

'\,

l!z

~~

f'\ ........

l!o:

.~ ~

.5

(Jo:

~~.

1"--

i~~11111 flttlj

.01 '---'-_-"---'-_-'-_.L....-'-_.L....-"'_-'---'
.2
.5
1
2
5 10 20
.01 .02 .05 .1
is -

-25.

PULSE GATE CURRENT (mA)

TJ

Current VS. On State Voltage
10

g

TJ

a
OJ

~
~

I
.!"

I-

Z

.1

ISO

.50

:J

(J .20

UJ

I-

«

I-

Vl

.10

Z

0

UJ

I

'"

.05

«
0:

UJ

I
I

.05

125

0:
0:

1
.2

100

UJ

II
rl

.5

75

1

jI

Z

OJ
0:
0:

so

g

~ 25'C ~/:, l125'cl

I-

25

JUNCTION TEMPERATURE ('C)

Current vs. Power Oissipation

I

2

-

>
«
I

.02

I

.02
.01
0.1

0.2
VI -

0.5

I

.005
1.0

_2.0

5.0

10

20

.02

.05

.10

.20

.50

1.0

2.0

W - MAXIMUM ON-STATE
POWER DISSIPATION (W)

TYPICAL ON-STATE VOLTAGE (V)

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
. TEl. (617) 926-0404 • FAX (617) 924-1235

L--...J':-_--:'::_--:'::_-:':-_ _::--:':-____:'
.01

9-48

PRINTED IN U.S.A.

SCRs

10200-10203
10300-10301

1.6 Amp, Planar

FEATURES
• Voltage Rating: to 200V
• Max. Gate Trigger Current: 200l'A
• Hermetically Sealed Metal Can
o Planar Passivated Construction

DESCRIPTION
This Data Sheet describes Unitrode's line of hermetically sealed industrial SCRs
designed for high-voltage, medium-current control applications. The Series is
packaged in a TO-39 metal case with Unitrode's unique oxide passivated junctions
to ensure reliability and parameter stability.
Typical applications include relay equipment, motor controls, process controllers
and pulse generators.

ABSOLUTE MAXIMUM RATINGS
10200

10202

10201

10203

10300

10301

Repetitive Peak Off-State Voltage, VORM .
. . . . 50V ............... lOOY. ... . ...... l50V ................ 200V..
300V..
..... 400V
Repetitive Peak Reverse Voltage, VRRM ...
........ 50V.......... lOOV...... . .... l50V. ...
.... 200V............... 300V ............... 400V
Non-Repetitive Peak Reverse Voltage, VRSM «5ms) ... 75V
. l50V.
225V........... 300V...... .... 400V ............... 500V
On-State Current, IT(RMSI
...... 1.6A ....
70'C Case
75'C Ambient ..
....................450mA ..
Peak One Cycle Surge (Non-Repetitive) On-State Current, I TSM
......... .15A ..
Repetitive Peak On-State Current, ITRM .
................. up to 30A ..
Rate of Rise of On-State Current, di/dt .
..... .100All's
I't (for times> 1.5 ms) .
. ................. O.83A's ..
Peak Gate Current, IGM
.............. 250mA .. .
..... .25mA ... .
Average Gate Current, IG(AV)
Reverse Gate Voltage, VGR
...................... 6V
... -65'C to +150'C.................... .
Storage Temperature Range "
Operating Temperature Range
...................................................... .
........... -40'C to +llO'C ..................... .

MECHANICAL SPECIFICATIONS

10200-10203

10300·10301

TO·205AO (TO·39)

ins.

305-335
.335-.370
.240-.260
.010-.030
5 MIN

017

i

7.75-8.51
8.51-9,40
6.35-6.60
25-.76
12.70MJN .

'88I

.200
100
.aJh.OOl
029-045
.100

.432t:~~

508
2.54
79t.08
.74-1.14
2.54

nn

SEMICONDUCTOR

~ PRODUCTS

9-49

_UNITRODE

III

10200-10203, 10300-10301
ELECTRICAL SPECIFICATIONS (at 25'C unless noted)
Test

Symbol

Min.

Typ.

Max.

Units

-

5
10
-

JlA
JlA
JlA
JlA

VGT

0.4
0.5
0.2

0.S2
0.7

10
100
10
100
200
SOO
0.8
1.0

VTM

-

Off-State Current

IORM

-Reverse Current

IRRM

Gate Trigger Current

IGT

On-State

Volta~e

Peak On - Voltage
Holding Current
Off-State VoltageCritical Rate of Rise

IH
dvldt

TUIII-.:m Time

ton

Circuit Commutated
Turn-off Time

tq

0.3
0.4
0.2

-

0.7
--

-

2.2
3.0
6.0

1.0

-

-

40

20

IlA
I'A
V
V

.v

V
mA
mA
mA
VIJls

Test Conditions

VORM = Rating, RGK = 1K, T = 2S'C
VORM = Rating, RGK = 1K, T = 1l0'C
VRRM = Rating, RGK = 1K, T = 2S'C
VRR ... = Rating, RGK = 1K, T = 1l0'C
Vo - SV, RGS _ 10K, T _ 2S'C
Vo = SV, RGS = 10K, T = -40'C
Vo = SV, RGS = lOOn, T = 2S'C
Vo = SV, RGS = 1000, T = -40'C
Vo == SV,.R GS = lOOn, T = 1l0'C
IT = 4 Amp Pulse, T = 2S'C
RGK = 1K, T = 2S'C
RGK = 1K, T·= -40'C
RGK = 1K, T = 1l0'C
VORM = Rated, RGK = 1K, T = 1l0'C

JlS

IG = 10mA, IT = I ,Vo.= 30V, T = "2S'C

JlS

IT = iR

=lA, RGK = 1K, T = 2S'C

Note: Blocking voltage ratings apply over the full operating temperatu re range, provided the gate is connected to the cathode through a resistor, 1000 ohms or smaller, or other adequate bias is used.

UNITRODE • SEMICONDUCTOR PRODUCTS
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9-50

PRINTED IN U.S.A.

U13T1-U13T2

PUTs
Planar, TO-18 Hermetic

FEATURES
• Voltage Ratings: to 100V
o Maximum Peak Current: ISOnA
• Valley Current: as low as 2SI'A
• Low Forward Voltage Drop
• Nano-Amp Leakage
• Hermetically Sealed TO-IS Metal Can

DESCRIPTION
The Unitrode hermetically sealed TO-IS metal can series of programmable unijunction
transistors feature blocking voltages to 100V, the highest available to designers. These
PUTs are functionally equivalent to standard unijunction transistors, with the added
advantages of programming versatility. External resistors can be added to program
~, RBB , Ip and I" depending upon your design requirements. All units are fully planar
passivated. This series features a hermetically sealed TO-IS package for optimum
reliability in all environmental conditions. Applications include pulse and timing
circuits, SCR trigger circuits, relaxation oscillators, and sensing circuits. For further
application information see Unitrode's Application Note U-66.

ABSOLUTE MAXIMUM RATINGS
..... 40V
.............. 40V
..... 40V
.. 40V
... SV

Anode-to-Cathode Forward Voltage, VAK
Anode-to-Cathode Reverse Voltage, VAKR
Gate-to-Cathode Forward Voltage, VGK .
Gate-to-Anode Reverse Voltage, VGAR •
Gate-to-Cathode Reverse Voltage, VGKR
Peak Recurrent Forward Current
10 I's 1% Duty Cycle .......
1001's I % Duty Cycle .
Power Dissipation
2S·C Ambient.
Derating Factor
Storage Temperature Range
Operating Temperature Range

. SA
.5A
.... 400mW
.... 3.2mW/·C
... -5S·C to +15O"C
............. -5S·C to +lSO·C

MECHANICAL SPECIFICATIONS
UI3Tl-UI3T2

INCHES
.178-.195 DIA.

MILLIMETERS
4.52-4.95 DIA .

.170-.210

4.31-5.33

.5 MIN.
D

.209-.230 OIA.

GATE CONNECTED TO CASE

12.70 MIN .
5.31-5.84 DIA.

017 ± .002 OIA.

.432 ± :g~~

F
G

.020 MAX.

.508 MAX.

. IOOt.OID OIA.

2.54:t.254 DlA .

H
J

.04U.OOS

1.04:1.127

.

.0010IA.

.028-.048

TO-18

.711-1.22

nn

SEMICONDUCTOR

~ PRODUCTS

. 9-51

_UNITRDDE

U13T1-U13T2

ELECTRICAL SPECIFICATIONS (at 25"C unless noted)
Ul3Tl

Symbol

Fig_

Peak Current

Ip

1

Valley Current

Iv

1

Test

U13T2
liIax_
Min.

Units

Min.

Max.

70
-

5
2

-

0_15

pA
pA

-

25

50

-

-25

pA
pA

1-0

Vr

1

0.2
0.2

0_6
1.6

0.2
0.2

0.6
0.6

V
V

Gate-to-Anode Leakage

IGAO

2

10
100

-

10
100

nA
nA

Gate-to-Cathode Leakage

I GKS

3

100

-

100

nA

Forward Voltage

VF

4

-

1.5

-

1.5

V

Pulse Output Voltage

YO' .

5

6

-

V

Pulse Output Rate of Rise

t,

5

80

nS

Offset Voltage

-

-

6

-

80

ItT Er

C

:L

Vs

R2

a) Typical Circuit

SOmA

IF -

VT =Vp-Vs

Vp

A G

Test Conditions

=10k, V, = 10V
=1 Meg_
RG =10k, V, =10V
RG =1 Meg_
RG =10k, V; = 10V
RG = 1 Meg.
T _ 25"C, V, _ rating
T = 75"C
V, = rating
RG
RG

Vs
V,

R,V

.::.Vs= R 1+R 2

V,
I.

b) Equivalent Test Circuit

I,

I,

c) Characteristic Curve

Figure 1

Figure 2

Figure 4

Figure 3

6V

.6V

==-"-______

_>

Figure 5

UNITRODE • SEr.lICONDUCTOR PRODUCTS
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9-52

PRINTED IN U.S.A.

SENSISTORS®

. . 10-3
. .10-4

Product Selection Guides .
Oatasheets .......... .

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET. WATERTOWN. MA 02172
TEL. (617) 926·0404 • FAX (617) 924·1235

10·1

PRINTED IN U.SA

III

UNITRODE· SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET·. WATERTOWN, MA 02172
TEL. (617) 926-0404 • FAX (617) 924-1235

10-2

PRINTED IN U.S.A.

PRODUCT SELECTION GUIDE

SENSISTORS®

Resistance. Range

(0)

Resistance Range
(R25°CJR125°C)

Tolerance

Package

TG1/8·J
TGl/8-K
TMl/8·J
TM1I8-K'
TMl!4'J
TM1I4'K·

10·10K
10·lOK
10·39K
10·39K
10·10K
10·10K

0.55±15%
0.55±15%
0.55±15%
0.55±15%
0.55±15%
0.55±15%

5%
10%
5%
10%
5%
10%

TG
TG
TM
TM
TM
TM

RTH22£S-J .
RTH22 ES~K
RTH42 £S'J
RTH42 ES,K·

10·10K
10·lOK
10·2.7K
10·2.7K

0.55±15%
0.55±15%
0.55±15%
0.55±15%

5%
10%
5%
10%

TM
TM
TG
TG

Type

.

Sensistors~ is a registered trademark of Unitrode Corporation.

TMl/8272K

TYPE NUMBER DESIGNATION

TM 1/8 272 K
==~---r~T ~ -rL-_ _ _- - - ,

1--;:::::1
STYLE
TM
TG
RTH22 ES
RTH42 ES

UNITRODE • SEMICONDUCTOR PRODUCTS
580 PLEASANT STREET· WATERTOWN, MA 02172
TEL. (617) 926·0404· FAX (617) 924·1235

WATIAGE
1/8

RESISTANCE VALUE CODE
270 = 270
271 = 2700
272 = 2,7000
273 = 27,0000

10·3

TOLERANCE
J = 5%
K = 10%

PRINTED IN U.S.A.

SENSISTORS®

TGl/8
TMl/8

Positive - Temperature - Coefficient
Silicon Thermistors

RTH42
RTH22

TMl/4

FEATURES
• Qualified to MIL-T-23648A
• TGl/8 ~ Similar to RTH42
(MIL-T-23648A/19)
• TMl/8 - Similar to RTH22
(MIL-T-23648A19)
• Large Positive Temperature Coefficient
""'0.7%rC
• Wide Resistance Value Ranges Available
in 5% or 10% Tolerances

DESCRIPTION
The TGl/8 thermistor is encapsulated in
a glass, hermetically sealed package. The
TM1/8 and TM1/4-thermistors are encapsulated in a molded package. Both have
hot solder-dipped leads and are used in
temperature sensing and compensation
circuits. They meet or exceed all of the
requirements of MIL-T·23648A.

ABSOLUTE:MAXIMUM RATINGS

TMl/8
RTH22

TGl/8
RTH42

TM1I4

Power Dissipation at (or below)
25°C Free,Air Temperature (See Figure 1) ................... 300mW ....... 500mW'......... 500mW .... .
Power Dissipation at (or below)
100°C Free Air Temperature (See Figure 1) .......................... 125mW ................ 250mW .... .
Operating Free-Air Temperature Range ........................... -55°C to + 125°C ...... -55°C to + 125°C
Storage Temperature Range .... _..•............................. -65°C to +150°C ...... -65°C to +150°C

MECHANICAL SPECIFICATIONS
TM1I4

A
B

e
D

INCHES

MILLIMETERS

.020' .002
1.0 MIN.
.2B5 •. 015
.095' .01

.50B' .051
25.4 MIN.
7.239 •.381
2.413 •. 254

TM1I4

A
B
C
D

TG1I8
RTH42

TM1I8
RTH22

INCHES

MILLIMETERS

.025' .003
1.0 MIN.
.405 •. 015
.14 •. 015

.635' .076
25.4 MIN.
1O.2B7 •. 381
3.556' .381

TG

TM

n nSEMICONOUCTOR
L:::::J
PRODUCTS
4/82

10-4

"_UNITRODE

TGl/8

ELECTRICAL AND THERMAL CHARACTERISTICS

TGl/8
RTH42

TMl/8
RTH22

TMl/8
RTH42

TMl/4
RTH22

TMl/4

Zero Power Resistance Ratio (R25"C/RI25"C) ................................. 0.55 ± 15% ...... .
Thermal Time Constant - Typical .....•....................................... 35s .......... .
Thermal Time Constant - Maximum ............................ " ............ 60s .......... .

NOMINAL RESISTANCE AT VARIOUS TEMPERATURES

Standard Zero
Power Resis·
tance Value
(0) at 25°C
Free·Air
Temperature

Type No.

Resistance (0) of Sensistor" at Temperature other than 25°C

-55°

-15°C

DOC

50°C

75°

lOWC

125°C

10

TGl/8

RTH42

TMl/8

RTH22

TMI/4

6.15

7.9

8.63

11.6

13.5

15.45

17.5

12

TGl/8

RTH42

TMl/8

RTH22

TMl/4

7.38

9.48

10.356

13.92

16.2

18.54

21

15

TGl/8

RTH42

TMl/8

RTH22

TMl/4

9.225

11.85

12.945

17.4

20.25

23.175

26.25
31.5

18

TGl/8

RTH42

TMl/8

RTH22

TMl/4

11.07

14.22

15.534

20.88

24.3

27.81

22

TGl/8

RTH42

TMl/8

RTH22

TMl/4

13.53

17.38

18.986

25.52

29.7

33.99

38.5

27

TGl/8

RTH42

TMl/8

RTH22

TMl/4

16.605

21.33

23.301

3132

36.45

41.715

47.25

33

TGl/8

RTH42

TMl/8

RTH22

TMl/4

20.295

26.07

28.479

38.28

44.55

50.985

57.75

39

TGl/8

RTH42

TMl/8

RTH22

TMl/4

23.985

30.81

33.657

45.24

52.65

60.255

68.25

47

TGl/8

RTH42

TMl/8

RTH22

TMl/4

28.905

37.13

40.561

54.52

63.45

72.615

82.25

50

TGl/8

RTH42

TMl/8

RTH22

TMl/4

30.75

39.5

43.15

58

67.5

77.25

87.5

56

TGl/8

RTH42

TMl/8

RTH22

TMl/4

34.44

44.24

48.328

64.96

75.6

86.52

98

68

TGl/8

RTH42

TMl/8

RTH22

TMl/4

41.82

53.72

58.684

78.88

91.8

105.06

119
147.6

82

TGl/8

RTH42

TMl/8

RTH22

TMl/4

47.724

63.14

69.454

95.94

112.34

129.888

100

TGl/8

RTH42

TMl/8

RTH22

TMl/4

58.2

77

84.7

117

137

158.4

180

120

TGl/8

RTH42

TM1!8

RTH22

TMl/4

69.84

92.4

101.64

140.4

164.4

190.08

216

150

TGl/8

RTH42

TM1!8

RTH22

TM1!4

87.3

115.5

127.05

175.5

205.5

237.6

270

180

TGl/8

RTH42

TM1!8

RTH22

TMl/4

100.8

135.9

150.84

212.4

252

292.14

334.8

220

TGl/8

RTH42

TM1!8

RTH22

TMl/4

123.2

166.1

184.36

259.6

308

357.06

409.2

270

TGl/8

RTH42

TM1!8

RTH22

TM1!4

151.2

203.85

226.26

318.6

378

438.21

502.2

330

TGl/8

RTH42

TM1/8

RTH22

TMl/4

184.8

249.15

276.54

389.4

462

535.59

613.8

390

TGl/8

RTH42

TM1!8

RTH22

TMl/4

218.4

294.45

326.82

460.2

546

632.97

725.4

470

TGl/8

RTH42

TM1!8

RTH22

TM1!4

263.2

354.85

393.86

554.2

658

762.81

874.2

500

TG1/8

RTH42

TMl/8

RTH22

TM1!4

280

377.5

419

590

700

811.5

930

560

TGl/8

RTH42

TMl/8

RTH22

TM1!4

308

414.4

467.6

672

795.2

927.36

1,075.2

680

TGl/8

RTH42

TMl/8

RTH22

TMl/4

374

503.2

567.8

816

965.6

1,126.08

1,305.6

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10-5

PRINTED IN U.S.A

TGl/8 TMl/8 TM1/4
RTH42 RTH22

NOMINAL RESISTANCE AT VARIOUS TEMPERATURES
Type No.

Standard Zero
Power Resis·
tance Value
(0) at 25·C
Free·Air
Temperature

Resistance (0) of Sensistor® at Temperature other than 25·C

-55·

-15·C

O·C

50·C

TMl/8

RTH22

TM1/4

451

606.8

684.7

984

RTH42

TM1/8

RTH22

TMl/4

550

740

RTH42

TMl/8

RTH22

TM1/4

660

888

1,002 ",

-

TM1/4

772.5

1,095

1,237.5

1,845

2,175

2,505

2,940

RTH22

TMl/4

825

1,110

1,252.5

1,800

2,130

2,484

2,880

1,314

1,485

2,214

2,610

3,006

3,528

1,606

1,815

2,706

3,190

3,674

4,312
5,292

TG1/8

RTH42

1,000

TG1/8

1,200

TGl/8
TG1/8

RTH42

-

-

-

TMl/8

1,800

TGl/8

RTH42

TM1/8

RTH22

TM1/4

927

2,200

TGl/8

RTH42

TMl/8

RTH22

TM1/4

1,133

820

1,500

835

75·

100·C

1,164.4 1,357.92

125·C
1,574.4

1,200

1,420

1,656

1,920

1,440

1,704

1,987.2

2,304

2,700

TG1/8

RTH42

TMl/8

RTH22

TM1/4

1,390.5

1,971

2,27.5

3,321

3,915

4,509

3,300

TGl/8

-

TMl/8

RTH22

TMl/4

1,699.5

2,409

2,722.5

4,059

4,785

5,511

6,468

3,900

TGl/8

TMl/8

RTH22

TMl/4

2,008.5

2,847

3,217.5

4,797

5,655

6,513

7,644

4,700

TGl/8'

TMl/8

RTH22

TMl/4

2,420.5

3,431

3,877.5

5,781

6,815

7,849

9,212

5,000

TGl/8

TMl/8

RTH22

TMl/4

2,575

3,650

4,125

6,150

7,250

8,350

9,800

5,600

TGl/8

TMl/8

RTH22

TMl/4

2,884

4,088

4,620

6,888

8,120

9,352

10,976

-

-

TMl/4

3,468

4,964

5,610

8,092

9,520

10,948

12,444

-

-

TMl/8

RTH22

TMl/4

3,502

4,964,

5,610

8,364

9,860

11,356

13,328

TGl/8

-

TMl/8

RTH22

TMl/4

4,182

5,986

6,765

9,758

11,480

13,202

15,006

-

-

TMl/8
TM1/8

RTH22
RTH22

TMl/4
TMl/4

4,223
5,100

5,986
7,300

6,765
8,:250

10,086
11,900

11,890
14,000

13,694
16,100

16,072
18,300

TMl/8
TMl/8
TMl/8
TMl/8
TMl/8
TM1I8
TMl/8
TM1I8

RTH22

TMl/4

-

-

5,150
6,180
7,215
8,658
10,582
)2,987
15,873
18,759

7,300
8,760
10,680
12,816
15,664
19,224
23,496
27,768

8,250
9,900
12,210
14,652
17,908
21,978
26,862
31,746

12,300
14,760
18,150
21,780
26,620
32,670
39,930
47,190

14;500
17,400
21,450
25,740
31,460
38,610
47,190
55,770

16,700
20,040
20,050
30,060
36,740
45,090
55,110
65,130

19,600
23,520
28,500
34,200
41,800
51,300
62,700
74,100

6,800
8,200
10,000
12,000
15,000
18,000
22,000
27,000
33,000
39,000

TGl/8

TGl/8"

-

-

-

DEVICE TOLERANCE
The actual resistance of the thermistor at T;oC may vary from the calculated value by
an amount not exceeding the tolerances tabulated below.
Temperature

±5%

(·C)

(J)

(K)

-55

±15%

±20%

-15

±9%

±14%

0

±7%

±12%

25

±5%

±1O%

50

±7%

±12%

±10%

75

±9%

±14%

100

±12%

±17%

125

±15%

±20%

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10-6

PRINTED IN U.S.A.

TGl/8 TM1/8 TM1/4
1.

Dissipation Derating Curves

600,-----,----,-----.-----.-----,

~ 500 r---~--__,+------~------'-----_j
z
o

'"

~ 400

ill
Ci

~300 r---~~~+-~,,~~~_+----_j

fr

"i 200
x

«

"125-~::::+=::::~~::~::::~~~~
~
100 ~
o

~

____

o

~

25

____

~

____

50

_ L_ _ _ ___'__ _ _ _

75

100

~

125

T.-FREE AIR TEMPERATURE (0G)

TYPICAL CHARACTERISTICS WITH POWER APPLIED
To determine resistance value with power applied, obtain a multiplying factor from the applicable curve below. The free-air curve is
for the condition of heat removal by free-air convection only. The heat sink curve is for the maximum cooling rate condition of a
heat sink strap, with leads attached to an infinite heat sink. Actual conditions encountered will be between these two extremes. After
selecting an applicable multiplying factor from figure 2 or 3, multiply this by the 25°C zero power resistance. This product is then
corrected for the actual ambient temperature 'by use of the appropriate temperature column in the Nominal Resistance at Various
Temperatures table.

2.

Percent Resistance Change vs
Power Dissipation
TM1I8 I RTH22 I TM1I4

3.
1.2

1.2

'"0>-

'"0

u

L

;l;

'"z

~
5:::l

Percent Resistance Change vs
Power Dissipation
TM1I8 I RTH42! TM1I4

FREE·AIR

T.=25°/l
1.1

V

w

V

u

«

~

....... V

1.0

~

o

'"z

~
5:::l

./

/'

'/'

100

200

FREE·AIR

1.1

TA =2

"z

L

w

HEAT SINK
T, = 25°Ct

/ /'

~

;l;

./V

V

"z

>u

./

300

U

/

«

>-

.

V

~

-t-U-E-S2_1~-~-:-S-M-+-----t------t------t----,----t

Il'l--l0-0-v-+--.-'tr,,-r

I

trr
150V

25n5
UESlO03SM

trr

25ns

STANDARD RECOVERY RECTIFIERS

UESll02SM
SM5B04
25ns

UES1302SM
SM5B09
30ns

UESll03SM
SM5806
25ns

UES1303SM
SM5811
30n5

..

HV PLUS RECTIFIERS

400V

SM3612
SM4246

SM5616
SM5617

SM5551
SM541B

600V

SM3613
SM4247

SM561B
SM5619

SM5552
SM5419

BOOV

SM3614
SM424B

SM5620

SM5553

SM4249

Contact factory for Rectifiers, Zeners; TVSs, and PINs not displayed in this section.

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SURFACE MOUNT PACKAGES

PRODUCT SELECTION GUIDE

Power Zeners & Transient Voltage Suppressors

D.mA
POWER ZENERS

POWER ZENERS

SM4461
SM4462
SM4463
SM4464

SM5968
SM5969
SM4954
SM4955
SM4956
SM4957

10V
llV
12V
13V
14V

SM4465
SM4466
SM4467
SM4468

SM4958
SM4959
SM4960
SM4961

UZ710SM

15V
16V
18V
20V
22V

SM4469
SM4470
SM4471
SM4472
SM4473

24V
27V
30V
33V
36V
39V
40V
43V
45V
47V
50V
51V
56V
60V
62V

UZ706SM
UZ707SM
UZl08SM
UZ709SM

D

MELF B

SM4486

SM4979

82V
90V

SM44B7

C""..IJ!l"\nn

UZ712SM
UZ713SM
UZ714SM

91V
100V
'110V
120V
130V

SM4488
SM4489
SM4490
SM4491
SM4492

SM4981
SM4982
SM4983
SM4984
SM4985

SM4962
SM4963
SM4964
SM4965
SM4966

UZ715SM
UZ716SM
UZ718SM
UZ720SM
UZ722SM

140V
150V
160V
170V
180V

SM4493
SM4494

SM4986
SM4987

SM4495

SM4988

SM4474
SM4475
SM4476
SM4477
SM4478

SM4967
SM4968
SM4969
SM4970
SM4971

UZ724SM
UZ727SM
UZl30SM
UZl33SM
UZ736SM

190V
200V
220V
240V
260V

SM4496

SM4989
SM4990
SM4991

SM4479

SM4972

SM4480

SM4973

SM4481

SM4974

UZ745SM
UZ750SM
SM4482
SM4483

SM4975
SM4976

SM4484

SM4977

UZllOSM
UZ111SM
UZ112SM
UZ113SM
UZl14SM
UZ115SM
UZ116SM
UZ117SM
UZ118SM
UZ119SM,
UZ120SM
UZ122SM
UZ124SM
UZ126SM

SM4992
SM4993

UZ128SM
UZ130SM
UZ132SM

SM4994

340V
360V
380V
390V
400V

UZl56SM
UZl60SM

oJIVI"'T;1OV

UZ790SM

270V
280V
300V
320V
330V

UZ740SM

UZ770SM
UZ775SM
UZ780SM

SM4995

UZ134SM
UZ136SM
UZ138SM

SM4996
UZ140SM

TRANSIENT VOLTAGE SUPPRESSORS

5.0
6.0
12.0
15.0
24.0
30.5
40.3
51.6

5.6@ 25mA
6.5 @ 20mA
13.6@ 5mA
16.4 @ 5mA
27.0 @ 2mA
33.0@ 1mA
43.7 @ 1mA
54.0@ 1mA

9
11
22.6
26.5
41.4
47.5
63.5
78.5

500

Contact factory for Rectifiers. Zeners. TVSs. and PINs not displayed in this section.
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APPLICATION NOTES

. . 12-3
. .12-4

Table of Contents . .
Application Notes .

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I!I

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TABLE OF CONTENTS-Application Notes
POWER SUPPLY DESIGN
U-68A

Switching Regulator Design Guide ...................................................... 12-4

U-73A

The Importance of Rectifier Characteristics in Switching Power Supply Design .................... 12-26

U-76

Flyback and Boost Switching Regulator Design Guide ....................................... 12-37

U-77

Thermal Design Considerations for Operating Unitrode's 10-92 Transistors and
Darlingtons in Pulsed-Power Applications ................................................ 12-46

U-79

Guidelines for Using Transient Voltage Suppressors ......................................... 12-50

U-82

Hybrid Circuits for Low Voltage Switched-Mode Converters ................................... 12-59

U-83

Incorporate Active Inrush Current Limiting to Improve Reliability and Efficiency of
Power Supplies .................................................................... 12-68

U-85

Design Guide-Power Schottky Rectifiers in a Switching Regulator ............................. 12-72

U-103

Using Bipolar Synchronous Rectifiers Improves Power Supply Efficiency ......................... 12-88

U-105

How to Measure KT and Kv Without Measuring Torque or Angular Velocity ....................... 12-95

U-108

Schottky Rectifiers for Low Voltage Outputs .............................................. 12-97

DN-lA

Determining the Change in Zener Voltage When the Current is Changed ........................ 12-105

DN-3

Minimizing Storage Time When Using Unitrode Switching Regulator Power
Output Circuits (PIC600 Series) ....................................................... 12-106

DN-4

Avoiding Spurious Oscillation When Using Unitrode Switching Regulator Power
Output Circuits (PIC600 Series) ....................................................... 12-107

DN-6

Operating the Switching Regulator Output Circuit (PIC600 Series) at Low Frequencies .............. 12-108

DN-10

Squib-Firing Circuit Provides for Reliable Firing, from Low Level Inputs .......................... 12-112

DN-14

Nanosecond SCR Switch for Reliable High Current Pulse Generators and Modulators ............... 12-114

DN-15

Nanosecond SCR for Laser Diode Pulse Driver ............................................ 12-116

DN-20

New High Efficiency Circuit Designs Utilizing Low Saturation Drop Transistor ..................... 12-118

ST-Al

250 Watt Off-Line Forward Converter Design Review ....................................... 12-121

ST-A2

High Frequency Series Resonant Power Supply-Design Review ............................... 12-137

ST-D1

Proportional Base Drive of Bipolar Power Transistors in Switching Power Supplies ................. 12-152

Sr-I"l

Thermal Considerations for Semiconductor Device Reliability ................................. 12-159

ST-5

Selecting and Applying Rectifiers for Optimum Performance in Switching Power Supplies ............ 12-182

ST-12

Protecting Circuits from Transient Energy Sources .......................................... 12-190

ST-13

Limiting Inrush Current to a Switching Power Supply Improves Reliability, Efficiency ................ 12-200

TH-1

Mounting and Thermal Considerations (10-220 Package) ..................................... 12-204

TH-2

Thermal Design Considerations for Leaded Devices ......................................... 12-206

TVS200

Transient Voltage Suppressor Guide ..................................................... 12-208

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APPLICATION NOTE

U-68A

SWITCHING REGULATOR DESIGN GUIDE

I. The Advantages of the Switching Regulator
Unlike conventional "dissipative" series or shunt
regulators, in which the power-regulating transistor
operates in a continuous-conduction mode, dissipating large amounts of power at high load currents especially when the input-output voltage difference is
large- the switching regulator has high efficiency
under all input and output conditions. Furthermore,
since the power-transistor "switch" is always either
cul Oil ur :;aluraied (excepi for a very brief transition
between those two states), the switching regulator
can achieve good regulation despite large changes in
input voltage, and maintains high efficiency over wide
ranges in load current.

industrial process control systems, instrumentation,
and communication.
Compared to the dissipative regulator, the switching
regulator does have some disadvantages which preclude its use in some applications. The primary power
source delivers current to the switching regulator in
pulses which, for efficiency reasons, have short rise
and fall times. In those applications where a significant series impedance appears between the supply
and the regulator, the rapid changes in current can
generate considerable noise. This problem can be
reduced by reducing the series impedance, increasing the switching time, or by filtering the input to the
regulator.

Because the switching regulator regulates by varying
the ON-OFF duty cycle of the power-transistor switch,
and the switching frequency can be made very much
higher than the line frequency, the filtering elements
used in the power supply can be made small, lightweight, low in cost, and very efficient- i.e., with almost
negligible power losses. It is possible to drive the
switching regulator with very poorly filtered DC (in
fact, in high-power applications, three-phase rectification without filtering of any kind is often used to
develop the input DC from the power line), thereby
eliminating large and expensive line-frequency filtering elements.

A second problem of the switching regulator, compared to the dissipative regulator, is its response time
to rapid changes in load current. The switching regulator will reach a new equilibrium only when the
average inductor current reaches its new steady-state
value. In order to make this time short, it is advantageous to use low inductor values, or else to use a
large difference between the input and output Voltage.
Improved circuits for controlling switching regulators
have been developed at Unitrode, thereby eliminating
some earlier design constraints and optimizing the
performance attainable with available hardware.
These new circuits permit taking full advantage of the
economy and efficiency of the Unitrode PIC600
Series Hybrid Power Switch.

Finally, it is possible to design switching regulators
with excellent load-transient properties, so that step
increases of load current cause relatively small instantaneous changes in output voltage, recovery from
which is essentially completed in a few hundred
microseconds.

The design approach used herein is believed to be
original, and to be clearly superior to earlier methods
of calculating the key parameters and designing the
power inductor ... yielding explicit, accurate results
in significantly less time than the approximate equations in common use.

The switching regulator has become increasingly
popular in new-equipment designs, not only in aerospace and defense applications, but in computers,

n
n
L.:::::J
12-4

SEMICONDUCTOR
PRODUCTS

_UNITRDDE

U-68A

APPLICATION NOTE

II. The Switching Regulator Described
and Characterized
The basic configuration of a switching regulator is
shown in Figure 1. It accepts a DC voltage input, Ein,
and regulates a DC ouput voltage, Eo, despite variations in Ein and load current. Although the static regulation, dynamic regulation, and ripple rejection of this
type of regulator cannot be as easily optimized as they
can in a continuous (so-called "dissipative") series
regulator, its efficiency, power density (Watts output
per cubic inch) and economy are all markedly superior
to the series regulator ... particularly for low-voltage,
high-current supplies. Unlike a series regulator, it
maintains high efficiency with high input voltages.
Switching regulators can thus be.employed with high
efficiency to derive low voltage outputs from a high
voltage unregulated supply.

load, circulating through "catch" diode D1. The input
of the LC filter is now at zero Volts, i1 decreases to
its original value and the cycle repeats.
The output voltage, Eo, will equal the time average of
the voltage at the input of the LC filter:
Eo =
where:

=

1/f

The control circuit senses and regulates Eo by controlling the duty cycle, ex = toofT. If Ein increases,
the control circuit will cause a corresponding reduction in the duty cycle, ex, so as to maintain a constant
Eo.

All of these advantages derive from the method of
regulating the output voltage: by varying the duty
cycle of a power-transistor switch, rather than varying
the voltage drop across a power transistor operating
in the linear mode. Because the switch (01 in Figure
1) is always in the saturated state when it is conducting, and is otherwise completely non-conducting (except for a brief commutation time between the ON and
OFF states), the power dissipated in the r.egulator is
much lower than it would be in a series regulator for
the same input and output conditions.

Eo =

ex Ein

lEI
Rs.1.L-

E in

The basic switching regulator circuit functions
as follows:
The control circuit causes transistor switch, 01, to
switch on and off at a predetermined frequency, f.
During the time that 01 is on, too. the input voltage,
Ein, is applied to the input of the LC filter, causing
current i1 to increase. When 01 is off, the energy
stored in the inductor, L, maintains current flow to the

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T

Ein toofT

FROM SENSING
AND
CONTROL CIRCUITS

L

D1
ESR

Figure 1. Switching Regulator Basic Configuration

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APPLICATION NOTE

U-68A

T.E2..

t••

Ein

Ein-Eo

Figure 2a

toff ::=

VL

-

Figu.re 2b

I,

T -

ton

-Eo

10+aiJ/2

i

-_~ ___ ~,-

~lo-ai./2 ~
ait

ao

Ein - Eo,
L
'.,

Eo, ..
L

LOTI

IV

it max - it min

ait/2

Figure2c

i.-Io

i2

Figure2d

aVe

Vc

Figure 2e

1
2

t.O
C

ail

BIC

ait

.

Vc

+ VESR

ESR

VESR

eo

Figure 21

eo
ae.

aVe OR aVm, whichever is greater.

NOTE: See Appendix A lor rigorous analysis and justification

Figure 2. Switching Regulator Waveforms

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APPLICATION NOTE

U-68A

Figure 2 shows some of the important waveforms and
equations which define the operation of the switching
regulator power circuit. The following discussion is
based on several simplifying assumptions which are
explained and justified or corrected in Appendix A.
The most significant assumptions are to neglect the
saturation voltage of 01, the forward drop of D1, and
the series loss resistance, Rs, of the inductor, L.

peak to peak capacitive ripple component aVe =
aO/C = aid8fC. (The factor 8f for a triangular current waveform is comparable to 21ff for a sinusoidal
input current.)
Figure 2e shows the resistive component, VES., of the
ripple voltage which simply equals i2 x ESR, and is
in phase with i2.
Figure 2f, the total output ripple voltage, eo, is the sum
of the waveforms in Figures 2d and 2e. Note that since
Ve and v,s. are in quadrature, the greater of these two
components dominates, and for all practical purposes
the peak to peak output ripple voltage, ae o, is equal to
either aVe or aVES. whichever is greater.

Figure 2a shows the voltage across inductor, L, which
equals (Ein - Eo) during to.. and (-Eo) during toff .
Under equilibrium conditions, when output load current, 10, is constant, the average voltage across L
must, by definition, equal zero.
Figure 2b shows the current i1 through the inductor.
Under equilibrium output current conditions, the increase in current during too. ail, must equal the decrease in current during toff . The average value of i1
equals the output current, 10.

The magnitude of VESR in comparison with Ve shown in
these waveforms is not exaggerated. Indeed, when
designing a switching regulator to operate at frequencies greater than 20 kHz in order to achieve small size
and low cost in the Land C filter elements, the ESR of
the capacitor usually dominates completely. Even
when high quality capacitors (low ESR) are employed,
it is usually necessary to use a larger capacitance
value than would otherwise be required in order to
realize the ESR required to achieve the ripple objective of the design.

Figure 2c shows current i2 through the capacitor,
which is equal to (i1 - 10). The average value of
i2 = 0, and ai z = ail. Current i2 causes a ripple voltage to appear at the output. The output ripple voltage,
eo, has two components, a capacitive component, Ve,
and a resistive component, VESR, caused by the equivalent series resistance of the capacitor.

With conventional free running switching regulator . .
control circuits, capacitor ESR also causes very significant departure from the design frequency, which
can result in large ripple magnitude, inductor saturation, and switching transistor failure. In the circuits
developed at Unitrode and presented in the next
section, the frequency-variation effect caused by ESR
is effectively eliminated, leaving only the ripple consideration.

Figure 2d shows the capacitive component, Ve, of the
ripple voltage, which is the time integral of the capacitor current, i2. Note that Ve is the integral of a triangular
wave, and is not sinusoidal. Also note that Ve is in
"quadrature" with i2, in the sense ihat Ve min and Ve
max occur at times A and S, midway in the to.. and toff
intervals, when i, is zero. The total charge, aO flowing
into C is computed graphically by finding the area of
the triangular current waveform between time A and
time B (Area = Yz bh; aO = '12 X r/2 x aiz/2). The

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Detailed design consiGerations for switching regulator
power circuits are contained in Section IV.

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U-68A

APPLICATION NOTE

III. Applications Circuits for Switching Regulators
The design and performance of conventional switching regulators are usually dominated by the ESR of the
output capacitor. However, in the group of circuits
described in this section, the following parametric relationships and circuit characteristics are easily and
economically attained:
• The switching frequency may be selected
and established at the optimum value for the
switching components, and will be independent of the value of the ESR of the output
capacitor.
• The value of toff is held relatively constant,
over wide ranges of load' current and input
voltage, and independent of the ESR of the
output capacitor. Constant toff results in constant ripple current and output ripple lioltage.
.• Settable overcurrent limiting is provided,
thereby protecting both the load and the
switching transistors under all conditions,
and preventing saturation of the power inductor during the startup transient period,
thereby minimizing startup overshoot.
• The overcurrent limiting circuit is significantly
lower in dissipation than conventional
current-limiHeedback arrangements.
• The drive current to the power output (switch)
stage is regulated to a pre-determined value,
for best efficiency and optimum switching
speed. Drive current is automatically increased at low temperatures and decreased
at high temperatures, thereby maintaining
optimum drive conditions for the power
switch.

3 typifies this family of regulators. ·It is shown implemented by the popularLM305 regulator IC, and a
Unitrode Series PIC600 Hybrid Power Switch, comprising a q'uasi-Darlington switching transistor,. a fast
recovery catch diode, and transistor bi.as resistors,
all matched for optimum efficiency and switching
speed (up io .100 kHz without derating). The configuration of Figure 3 is a positive output regulator, with
performance characteristics as follows:
20to 40V

Eo

5V ±

Lle o

10
Isc

1%

100 mV p-p (2% p-p rippie)
2to lOA
12A

Regulation versus Ein (20 to 40V) <25 mV
Transient Recovery Time for step change in load
current from 2A to lOA, or lOA to 2A < 150
jLsec.

= 50 kHz nominal
Efficiency> 70%
The circuit of Figure 3 operates in the fixed-olf-time
mode; hence, output ripple is inde