1990_Samsung_Linear_IC_Vol_4_Voltage_Regulators_PWM_Controllers 1990 Samsung Linear IC Vol 4 Voltage Regulators PWM Controllers
User Manual: 1990_Samsung_Linear_IC_Vol_4_Voltage_Regulators_PWM_Controllers
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- - ---- - - - ---------------- -------------------- !'---- ~-------=--== == =---~
== ---
Data Book
~
-------~-
I
~
II
In
I_ L_in_e_a_r _IC------t
VOL. 4,
I
I'
1990
-Voltage Regulators
- PWM Controllers
-Voltage References
-Operational Amplifiers
-Comparators
-Timer & Miscellaneous
Copyright 1990 by Samsung
All rights reserved. No part of this publication may be reproduced, stored in a retrieval
system, or transmitted in any form or by any means, electronic, mechanical, photo copying,
recording, or otherwise, without the prior written permission of Samsung.
The information contained herein is subject to change without' notice. Samsung
assumes no responsibility for the use of any circuitry other than circuitry embodied in
a Samsung product.
No other circuit patent licenses are implied.
SAMSUNG
DATA BOOK LIST
I. Semiconductor Product Guide
". Transistor Data Book
Vol. 1: Small Signal TR
Vol. 2: Bipolar Power TR
Vol. 3: TR Pellet
III. Linear IC Data Book
Vol.
Vol.
Vol.
Vol.
Vol.
1:
2:
3:
4:
5:
Audio/CDPlToy
Video
Telecom
Industrial
Data Converters
IV. CMOS Consumer IC Data Book
V. High Speed CMOS Logic Data Book
VI. MOS Memory Data Book
VII. SFET Data Book
VIII. MPR Data Book
IX. CPL Data Book
X. Dot Matrix Data Book
TABLE OF CONTENTS
I.
II.
QUALITY and RELIABILITY ............................................................
11
PRODUCT GUIDE
1. Function Guide ........................................................................................... 43
2. Cross Reference Guide .............................................................................. 50
3. Ordering Information .................................................................................. 54-
III.
VOLTAGE REGULATORS ................................................................
IV.
PWM CONTROLLERS ....................................................................... 193
V.
VOLTAGE REFERENCES ................................................................ 245
VI.
OPERATIONAL AMPLIFIERS ........................................................ 261
VII.
COMPARATORS ....................................................................................
339
VIII.
TIMER & MISCELLANEOUS ..........................................................
373
55
IX.
PACKAGE DIMENSIONS ................................................................. 417
X.
SALES OFFICES ................................................................................... 423
PRODUCT INDEX
Device
Function
Package
Page
3-Terminal Positive Voltage Regulators
3-Terminal Positive Voltage Regulators
3A Positive Voltage Regulators
3-Terminal 1A Positive Voltage Regulators
3-Terminal 0.5A Positive Voltage Regulator
3-Terminal Negative Voltage Regulator
3-Terminal Negative Voltage Regulator
3-Terminal 0.5A Negative Voltage Regulator
3A Adjustable Positive Voltage Regulator
3-Terminal Positive Adjustable Regulator
3-Terminal Positive Adjustable Regulator
3-Terminal Positive Adjustable Regulator
3-Terminal Negative Adjustable Regulator
3-Terminal Negative Adjustable Regulator
3-Terminal Positive Voltage Regulator
Precision Voltage Regulator
TO-92/8 SOP
TO·220
TO-220/TO-3P
TO·220
TO·220
TO·220
TO-92
TO·220
TO-3PITO-220
TO·220
TO-92
TO·220
TO·220
TO-92
TO-3P
14 DIP/14 SOP
57
67
79
90
120
133
142
147
153
161
166
170
174
178
181
186
Regulator Pulse Width Modulator
Regulator Pulse Width Modulator
Regulator Pulse Width Modulator
Regulator Pulse Width Modulator
Current Mode PWM Controller
Current Mode PWM Controller
DC To DC Converter Controller
DC To DC Converter Controller
16 DIP
16 DIP
16 DIP
18 DIP
8 DIP/14 SOP
16 DIP
8 DIP
8 DIP
195
199
207
213
219
226
234
239
VOLTAGE REGULATORS
MC78LXXAC
KA340TXX
KA78TXX
MC78XXC/AC/I
MC78MXXC/I
MC79XXC
MC79LXXAC
MC79MXXC/I
KA350
LM317
KA317L
KA317M
KA337
KA337L
LM323
LM723
PWM CONTROLLERS
KA7500
KA3524
KA3525AN
KA3526BN
KA3842
KA3846N
KA34063N
KA34063AN
VOLTAGE REFERENCES
KA431C!AC/I
KA336-2.5/B!
KA236-2.5
KA336-5.0!B!
KA236-5.0
Programmable Precision References
TO-92!8 DIP!8 SOP
247
Voltage Reference
TO·92
253
Voltage Reference
TO·92
257
PRODUCT INDEX
Package
Page
Single Operational Amplifier
Differential Video Amplifier
Dual Power Operational Amplifier
Quad Jfet Input Operational Amplifiers
Single Operational Amplifier
Dual Operational Amplifier
Dual Jfet Input Operational Amplifier
Dual CMOS Operational Amplifier
Quad CMOS Operational Amplifier
8 DIP/8 SOP
14 DIP/14 SOP
10 SIP
14 DIP
8 DIP/8 SOP
8 DIP/8 SOP
8 DIP/8 SIP
8 DIP/9 SIP
14 DIP
263
268
275
277
279
281
283
285
289
Quad Operational Amplifier
14 DIP/14 SOP
293
Quad Operational Amplifier
Dual Operational Amplifier
14 DIP/14 SOP
8 DIP/8 SOP/9 SIP
Function
Device
OPERATIONAL AMPLIFIERS
KA201 Al301 A
KA733C
KA9256
KF347C/AC
KF351
KF353
KF442C/AC
KS272C/AC, 27211AI
KS274C/AC, 27411AI
LM2241A,
LM324/AlLM2902
LM248/348
LM258A1LM358/A
LM2904
LM741C/EII
MC1458C/ACII/AI
MC3303/MC3403
MC4558C/ACII
I
302
308
8 DIP/8 SOP
8 DIP/8 SOP/9 SIP
14 DIP/14 SOP
8 DIP/8 SOP/9 SIP
316
322
326
333
Dual High Speed Voltage Comparator
High Speed Voltage Comparator
Dual High-Speed Differential Comparator
14 DIP/14 SOP
14 DIP/14 SOP
14 DIP/14 SOP
341
346
350
Qual Differential Comparator
14 DIP/14 SOP
353
Dual Differential Comparator
8 SIP/8 SOP/9 SIP
361-
8 DIP/8 SOP
368
Single Operational Amplifiers
Dual Operational Amplifiers
Qual Operational Amplifier
Dual Operational Amplifier
COMPARATORS
KA219/KA319
KA710CII
KA711CII
LM239/A, LM339/A,
LM2901, LM3302
LM293/A, LM393/A,
LM2903
LM311
Voltage Comparator
TIMER & MISCELLANEOUS
NE555CII
NE556CII
NE558CII
KS555
KS555H
KS556
KA33V
KA331
KA2803
KA2804
KA2807
Single Timer
Dual Timer
Qual Timer
CMOS Single Timer
CMOS Single Timer
CMOS Dual Timer
Silicon Monolithic Bipolar Integrated
Circuit Voltage Stabilizer for Electronic Tuner
Precision Voltage-To-Frequency Converter
Low Power Consumption Earth Leakage Detecfor
Zero Voltage Switch
Earth Leakage Detector
8
14
16
8
8
14
DIP/8 SOP
DIP/14 SOP
DIP/16 SOP
DIP/8 SOP
DIP/8 SOP
DIP/14 SOP
TO-92
8
8
8
8
DIP
DIP
DIP
DIP
375
379
382
385
390
394
398
402
406
409
412
Quality & Reliability
Product Guide
Voltage Regulators
PWM Controllers
Voltage References
Operational Amplifiers
I
I
I
-11
I
Comparators
Timer & Miscellaneous
Package Dimensions
Sales Offices
I
I
I
QUALITY and RELIABILITY
1. INTRODUCTION
SEC has been providing a wide variety of semiconductor products to the world since 1974. Since this time, extensive
in-sights have been gained to create methods which most effectively result in reliable products. The worldwide customers
of SEC have encouraged and helped develop the existing manufacturing and quality philosophy that is a way of life for
SEC management and it's employees. This philosophy dictates the need for a zero defect environment through out SEC's
processes leading ultimately to total customer satisfaction. By developing and using methods of Statistical Process Control and Statistical Quality Control, SEC has made great strides in improving product quality & reliability. The direct result
of these improvements has been reduced product DPM (Defects Per Million) to levels below customer requirements.
SEC's repeated ability to exceed requirements for customer's "Dock to Stock" programs and our commitment to all
our customers needs, has made SEC the company to watch as we move ahead into the 1990's and beyond.
SEC's linear IC products are among the most reliable in the industry. SEC has always made a commitment to achieve
the highest possible quality, reliability, and customer satisfaction with its products. Extensive qualification, monitor and
outgoing programs are used to scrutinize product quality and reliability. Stringent controls are applied to every wafer
fabrication and assembly lot to achieve reproducibility, and therefore maintain product reliability.
In this chapter, the quality and reliability programs established at SEC will be discussed. In addition, a description of
reliability theory, reliability tests and various support efforts provides a broad framework from which to comprehend SEC
quality and reliability.
To better understand the Quality Department's role in product development and manufacturing, a detailed diagram is
listed below. As can be noted, Quality Engineering is involved in all phases, save that of initial product planning.
STEP
CJ
z
zz
<
'[
SALES
I
I M~RKET
l
I
APPLICATION
SURVEY
SPEC. REVIEW
I
DESIGN
I
I
CJ
IL
~
....
<
it
DESIGN
l
•z
I
0
-
0
0
f
APPROVAL
I
I
I
I
I
z
I
0
~
I
PROCESS MONITOR
I
RELIABILITY TEST
0
III
III
<
~
<
I
I
I
I
FAILURE ANALYSIS
I
MASS PRODUCTION
I
}---J
L
LOT ACCEPTANCE TEST
I
INITIATE CORRECTIVE ACTION
I
I
I
I
I
J
I
I
I
:::I
c
CLAIM
INCOMING INSP.
I
II:
11.
p.P
QUALI FICATION
PROCESS CONTROL
()
II:
J
I
II:
~
I
STANDARDIZATION
A
~
w
I
I
EVALUATION & QUALIFICATION
w
~
PRODUCTION
CONTROL
PRODUCTION
I
I
I
I
QC/QA
QUALIFICATION FOR RAW MATERIAL
TRIAL MFG
l
z
0
g~
I
I
iii
w
I
I
I
DESIGN REVIEW
I-
CJ
PROCESS ENG'S'
I
I
COUNCIL FOR DEVELOPMENT
f----
I
b
SHIPPING
I
CUSTOMER
I
I
~
Quality Assurance During Development
c8SAMSUNG
Electronics
13
•
QUALITY and RELIABILITY
2. QUALITY & RELIABILITY PROGRAM
2.1 QUALIFICATION
Procedures to qualify devices are listed below. There are both general and product-specific requirements. Procedures
are detailed for new products, die-only qualifications, and package-only qualifications. The latter two are for products
andlor packages already qualified, but where there is room for further product optimization.
r
•
•
•
•
•
•
•
•
•
•
•
HOPL 1000HR
HTRB 1000HR
1000HR
IOPL
1000HR
HTS
168HR
PCT
WHOPL 1000HR
WHTRB 1000HR
TIC, TIS 200CYC.
20000CYC.
PIC
Solderability
Other as
applicable
1
i
Package
Sub-assembly
* New Process
Wafer-fabrication
•
•
•
•
•
•
•
HOPL
HTRB
HTS
PCT
WHOPL
WHTRB
TIC, TIS
*Testing time for each test items
depends on the grade (group) of devices.
(see the device group list 2.1 2))
=8~~SUNG
I
!
I
r
• New Product
Qualification Program
1000HR
1000HR
1000HR
168HR
1000HR
1000HR
200CYC.
•
•
•
•
•
•
HOPL 500HR
HTRB 500HR
200CYC.
TIC
200CYC.
TIS
168HR
PCT
Other as
applicable
I
* * Other
• Same as
New product
Qual.
* * Design, Equipment,
Material(s), etc ....
14
QUALITY and RELIABILITY
1) PROCESS DEVELOPMENT QUALIFICATION
Purpose: To investigate the change .of a process parameter and then apply it to a production process by reliability testing
of a process which has been newly developed.
New Process, Wafer Fabrication Qualification
Test Item
No
1
2
Package
Test Condition
L-IC
Discrete
YES
-
High Temperature
Operating Life (HOPL)
Ta=Topr(max)
Vcc= Vcc(max)
STATIC, DYNAMIC
1000HRS
High Temperature
Reverse Bias (HTRB)
Ta=Tj(max)
VCB=0.8xVCBO
1000HRS
-
YES
Ta=Tj(max)
1000HRS
YES
YES
3
High Temperature
Storage (HTS)
4
Pressure Cooker
Test (PCT)
Ta= 121°C±2°C
RH = 100% 15 PSIG
168HRS
YES
YES
5
Wet High Temperature
Operating Life (WHOPL)
Ta =85°C, RH=85%
Vcc=Vcc(min)
1000HRS
YES
-
6
Wet High Temperature
Reverse Bias (WHTRB)
Ta =85°C, RH=85%
VcB =0.8 xVCBO
1000HRS
-
YES
7
Thermal Shock (TIS)
- 65°C;:! 150°C (Liquid)
5min, < 10sec, 5min
200 cycles
YES
YES
8
Temperature Cycle (TIC)
- 65°C;:!150°C (Air)
10min, 10min
200 Cycles
YES
YES
When the results of a reliability test are good, the process characteristics good and the yield level is satisfied, the
process can be applied to production. If there are any problems found in a process ~fter it has been applied to production, the problem will be investigated in detail and the process will be revised. Once the process has been revised and
approved it will again be applied to production.
c8SAMSUNG
Electronics
15
•
QUALITY and RELIABILITY
2) PRODUCT DEVELOPMENT QUALIFICATION
Purpose: To develop a stable and uniform product that satisfies the customer's requirements for quality by using the exact reliability test specification.called out for the new product.
Products are grouped according to the importance of their application.
Group 2
Group 1
1.
2.
3.
4.
5.
6.
7.
8.
AID, D/A Converter
IC for LCD
IC for PC
ASIC Master
Codec
MPR
IC for Exchange
New Products
c8SAMSUNG
Electronics
1. Transistor
2. Regulator/OP AMP
3. IC for Telephone
4.
5.
6.
7.
ComparatorlTimer
MICOM
AudioNideo IC
General Mos IC
Group 3
1. ASIC Opinion Product
2. Toy/Melody IC
3. MICOM family
4. Products Except Group 1,
Group 2 Products
16
QUALITY and RELIABILITY
I
New Product Qualification Test Items
Test Condition
No.
Test Item
1
High Temperature
Reverse Bias (HTRB)
Ta=Tj(max)
VCB = 0.8 X VCBO
1000HRS
2
High Temperature
Operating Life
(HOPL)
Ta= Top,(max)
Vcc = Vcc(max)
Static, Dynamic
1000HRS
3
High Temperature
Storage (HTS)
Ta = Tstg(max)
1000HRS
Operating Life (OPL)
Ta=2SoC
Pc = Pc(max)
1000HRS
4
Part
L·IC
Discrete
-
YES
YES
YES
-
Reference
Method
MIL-STD-883
1005
YES
-
YES
MIL-STD-7S0
1026.3
-
YES
MIL-STD-7S0
1036.3
5
Intermittent
OPL (IOPL)
Ta=2SoC
Pc= Pc(max)
2min/2min OnlOff
1000HRS
6
Power Cycle
(PIC)
6Tj = 12SoC
120Sec/120Sec OnlOff
10000CYC.
YES
YES
7
Pressure Cooker
Test (PCT)
Ta = 121°C ± 2°C
RH = 100% 1SPSIG
168HRS
YES
YES
Wet High
Temperature
Reverse Bias
(WHTRB)
Ta = 8SoC, RH = 85%
VCB = 0.8 X VCBO
1000HRS
-
Wet High
Temperature
Operating Life
(WHOPL)
Ta = 8SoC, RH = 8S%
Vcc = Vcc(min) Pdmin
1000HRS
YES
10
Thermal Shock
(TIS)
(Liquid)
- 6SoC- 1SO°C
Smin, < 10Sec, Smin
200 Cycles
YES
YES
11
Temperature Cycle
(TIC)
(Air)
-6soC-1SOoC
10min, 10min
200 Cycles
YES
YES
MIL-STD-883
1011
12
Solder Heat
Resistance
(S/H)
Ta = 260°C ± SoC
t= 10± 2Sec
YES
YES
MIL-STD-750
2031.1
13
Solderability
YES
YES
MIL-STD-883
2003
14
Salt Atmosphere
YES
YES
8
9
Ta = 24SoC ± SoC
t=S±O.Ssec
Reject is > 10%
uncovered surface
Ta = 3SoC, S% NaCI
24HRS
c8SAMSUNG
Electronics
Note
For SmallSignal Device
For
PWR TR,
PWR IC
YES
-
MIL-STD-883
1011
MIL-STD-883
1009A
17
QUALITY and RELIABILITY
New Products Qualification Test Item (Continued)
No.
Test Item
Test Condition
Part
L-IC
Discrete
Reference
Method
Note
15
Mechanical
Shock
1500G, 0.5ms
3 Times Each direction
of X, Y and Z Axis
YES
YES
MIL-STD-750
2016
For
Hermetic
16
Vibration
20G, 3 Axis
f = 20 to 2000 cps
for 4 min, 4 cycles
YES
YES
MIL-STD-883
2007
For
Hermetic
17
Constant
Acceleration
2000G
X,Y,Z Axis
1min for each Axis
YES
YES
MIL-STD-883
2001
For
Hermetic
YES
YES
MIL-STD-883
3015
YES
-
YES
YES
18
ESD
(Human Body
Model)
19
Latch-up Test
20
Fine Leak
Gross Leak
R= 1.5kO
C=100pF
5 Discharge
V~ ± 1000V
Helium
Fluoro Carbon
MIL-STD-883
1014
For
CMOS
For
Hermetic
Note) • SOT-23, TO-92S PKG: PCT-48HR
c8 SAIUISUNG
Electronics
18
QUALITY and RELIABILITY
3) PACKAGE DEVELOPMENT QUALIFICATION
Purpose: Whenever a new package type is developed, it must meet the specifications for devices that have been qualified
and have maintained certain specified quality levels before the new package type may be applied to production.
Remarks
Con,ents
Flow
Beginning of PKG development
Select representative device for product group
(proceed at least 2 lots)
•
•
•
•
Ass'y Qual
Reliability Qual
Approvement of Qual
•
•
•
•
Push Test
Die Thick
Bond Pull
Lead Torque
•
•
•
•
MPT
Dimension
X-Ray
Solderability
• Vibration
HTRB (TR)
• PCT
• LTS
HOPL (IC)
• MIS
• Const
TIC
• 5/H
New PKG Development will be approved
when Rei qual is good for 500HR.
Package Sub-Assembly Qualification Test Items
No.
1
Test Item
High Temperature
Reverse Bias (HTRB)
2
High Temperature
Operating Life (HOPL)
3
Temperature Cycle
(TIC)
4
Pressure Cooker Test
(PCT)
5
Thermal Shock (TIS)
6
Solder Heat Resistance
(S/H)
7
Vibration (VariableFrequency)
8
Mechanical Shock (MIS)
9
Constant Acceleration
Test Condition
Package
Notes
Plastic
Hermetic
Ta=Tj(max)
Vce = 0.8 x Vceo
500HRS
YES
YES
For
Discrete
Ta= Topr(max)
Vcc= Vcc(ma,,)
Static, Dynamic, 500HRS
YES
YES
For IC
- 65°C~25°C~ 150°C
10min, 5min, 10min
200 CYCLES
YES
YES
Ta= 121°C ± 2°C
RH = 100%, 15PSIG
168HRS
YES
-
YES
YES
YES
YES
-65°C~150oC
c8SAMSUNG
Electronics
(Liquid)
5min, < 10sec, 5min
200 CYCLES
260°C±5°C
10± 1 sec
Once without Flux
100-2000-100Hz
20G, 5min, 5Times, X, y, Z
-
YES
For Discrete,
others as
applicable
1500G,O:5ms
3 Times, X, Y, Z
-
YES
same as above
20000G
X, Y, Z Axis
1 min for each Axis
-
YES
same as above
19
•
QUALITY and RELIABILITY
4) CHANGE QUALIFICATIONS:
Purpose: To apply changes to production processes and designs by evaluating the quality levels for those processes
and designs of devices in production.
Change
Classification
Change of more than 1EA MASK for the product in production.
Design
• Coating
Ass'y
• D/A
• W/B
• Mold
Diffusion
• Diffusion/Photo/Etch, etc.
• Metalization
• Passivation
Process
Procedure: Issuance of EIN for the change -> Review of initial characteristics-- Reliability test -> Issuance of ECN
(register of specification)->Application for production. Evaluation level: LTPD 10% (1/2)
2.2 MONITOR PROGRAM
1) ON GOING PROCESS CONTROL
All parameters of each process are controlled by SPC (Statistical Process Control). All resultant SPC data is gathered
by computers and recorded automatically. Trends of each parameter are plotted on control charts by the computer and
corrective actions are immediately taken whenever a parameter goes "out-of-control" beyond the control limits.
Whenever a parameter goes "out-of-control" in a process, engineers involved with that particular process have meetings
to decide the disposition of those lots that were effected by the out-of-control process and corrective actions are implemented. In the case of critical defects, all lots are scrapped by MRB (Material Review Board).
As the key item of ongoing process control, Cp or Cpk value is controlled by computer for each process. The UCL and
LCL for each process is then determined by the computer generated Cp or Cpk value. Cp or Cpk values are continually"
upgraded to insure the stabilization of process and a alP (quality improvement plan) is made out to drive defects down
to zero.
Process capabilities of each process are totaled and analyzed and those results of analysis are reflected on the alP,
The stabilization and maximization of process capabilities are driven by SPC.
2) PRODUCT RELIABILITY MONITOR
The reliability monitor program begins where the qualification program ends, at the start-up of limited production. Everything
that is subject to qualification is considered subject to the monitor program. Generally, the product to be used for reliabili'ty
monitors is gathered from each fab lot each month, where the product selected is representative of:
1)
2)
3)
4)
each
each
each
each
fab process technology
generic product type
package technology
subassembly plant
The product is shipped directly to the appropriate a & R group, which puts the product through a series of electrical,
mechanical, thermal, and environmental tests that usually are identical to those used initially for qualifying the product.
Most tests are of short duration, but some may extend out to thousands of hours. Each month the test results are evaluated
and problems, should they exist, identified.
Each monitor failure is analyzed, If a problem is detected where the failure rate is greater than that considered acceptable, or a reliability problem is suspected, a Material Review Board (MRB) is called. This meeting is attended by appropriate a & R personnel, scheduling personnel, engineering, and any other affected group.
This group reviews the data, decides on disposition of the affected material, decides on appropriate corrective action,
and basically controls the problem or issue until it is satisfactorily resolved.
c8~SUNG
20
QUALITY and RELIABILITY
I
3) FINAL QUALITY ASSURANCE PROGRAM
After the completion of the entire manufacturing process a sample of each lot is pulled and the data sheet verification
test is repeated. This final verification objective is to ensure that test system to test system variations are not compromising the quality, and that inadvertent system or handling problems have not occurred.
4) ENVIRONMENT MONITOR
:J-
• Instruments
-
F.M.S #1 (HIAC/ROYCO System 1 Set)
F.M.S #2 (P.M.S System 1 Set)
Control Particle Monitoring System (2 Set)
Portable Particle Counter, Sensors
On line monitoring system
(Central control room)
• Block Diagram
PATROL INSPECTION
PRODUCT AREA (CLEAN ROOM CLASS 1 -100)
c8SAMSUNG
Electronics
21
QUALITY and RELIABILITY
• Environment Monitor
Frequency
Item
5 min
5 min
5 min
5 min
5 min
5 min
5 min
All HEPAs/1 room/Day
Weekly
Monthly
1. Particle (Air. 0-1 Water)
2. Temperature. Relative Humidity
3. 0.1 Resistivity'
4. Differential Pressure
5. HEPA Air Velocity
6. Gas (H 2 • O2 • N2 • Air) Dew Point
7. Gas Pressure
8. HEPA Filter Particle
9. 0-1 Bacteria Main Lot
10. 0-1 Bacteria Using Lot
Corrective Action Requirement
CENTRAL ENVIRONMENTAL CONTROL
<$>
NO
OUT OF SPEC.
o
cUSAMSUNG
Electronics
NO
22
QUALITY and RELIABILITY
•
2.3 QUALITY CONFORMANCE PROGRAM
1) DESCRIPTION
SEC has established a comprehensive reliability program to monitor and ensure the ongoing reliability Of the
Linear IC family. This program involves not only reliability data collection and analysis on existing parts, but also
rigorous in-line quality controls for all products.
Listed below are details of tests performed to ensure that manufactured product continues to meet SEC's stringent
quality standards. In line quality controls are reviewed extensively in later sections.
The tests run by the quality department are accelerated tests, serving to model "real world" applications through
boosted temperature, voltage, and/or humidities. Accelerated conditions are used to derive device knowledge through
means quicker than that of typical application situations. These acceierated conditions are then used to assess
differing failure rate mechanisms that correlate directly with ambient conditions. Following are summaries of
various stresses (and their conditions) run by SEC on Linear IC products.
2) HIGH TEMPERATURE OPERATING LIFE TEST (HOPL)
(Tj = 125°C, Vee = Vee max, static)
High temperature operating life test is performed to measure actual field reliability. Life tests of 1000HR to 2000HR
durations are used to accelerate failure mechanisms by operating the device at an elevated ambient temperature
(125°C). Data obtained from this test are used to predict product infant mortality, early life, and random failure
rates. Data are translated to standard operating temperatures via failure analysis to determine the activation
energy of each of the observed failures, using the Arrhenius relationship as previously discussed.
3) WET HIGH TEMPERATURE OPERATING LIFE TEST (WHOPL)
=
=
(Ta =85°C, R.H. 85%, Vee Vee opt, static)
Wet high temperature operating life test is performed to evaluate the moisture resistance characteristics of plastic
encapsulated components. Long time testing is performed under static bias conditions at 85°C/85 percent relative
humidity with nominal voltages. To maximize metal corrosion, the biasing configuration utilizes low power levels.
4) INTERMITTENT OPERATING LIFE (IOPL)
(Pmax, 25°C, 2min on/2 min off)
This test is normally applied to scrutinize die bond thermal fatigue. A stressed device undergoes an "ON" cycle,
where there is thermal heating due to power dissipation, and an "OFF" cycle, where there is thermal cooling due
to lack of inputted power. Die attach (between die and package) and bond attach (between wire and die) are the
critical areas of concern.
5) HIGH TEMPERATURE STORAGE TEST (HTS)
(Ta= 125°C, UNBIASED)
High temperature storage is a test in which devices are subjected to elevated temperatures with no applied bias.
The test is used to detect mechanical instabilities such as bond integrity, and process wearout mechanisms.
6) PRESSURE COOKER TEST (PCT)
(121°C, 15PSIG, 100% R.H., UNBIASED)
The pressure cooker test checks for resistance to moisture penetration. A highly pressurized vessel is used to
force water (thereby promoting corrosion) into packaged devices located within the vessel.
7) TEMPERATURE CYCLING (TIC)
(- 65°C to
+ 150°C,
AIR, UNBIASED)
This stess uses a chamberwith alternating temperatures of - 65°C and + 150°C (air ambient) to thermally cycle
devices within it. No bias is applied. The cycling checks for mechanical integrity of the packaged device, in
particular bond wires and die attach, along with metal/polysilicon microcracks.
8) THERMAL SHOCK (TIS)
(- 65°C to + 150°C, LIQUID, UNBIASE,D)
This stress uses a chamber with alternating temperatures of - 65°C to + 150°C (liquid ambient) to thermally cycle
devices within it. No bias is applied. The cycling is very rapid, and primarily checks for die/package compatibility.
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QUALITY and RELIABILITY
9) RESISTANCE TO SOLDER HEAT
(UNBIASED, 260°C, 10 sec)
Solder Heat Resistance is performed to establish that devices can withstand the thermal effects of solder dip,
soldering iron, or solder wave operations.
10) MECHANICAL SHOCK
(UNBIASED, 1500g, Pulse=0.5msec)
This test determines the suitability of a device to be used in equipment where mechanical "shocks" may occur.
Such shocks result from sudden or abrupt changes produced by rough (non-standard) handling, transportation,
or field operations.
11) VARIABLE FREQUENCY VIBRATION
(UNBIASED, Range = 100 to 2000Hz)
Variable Frequency Vibration is done to model the effects of differential vibration in the specified range. Die attach
and bonding integrity are particularly stressed, testing the mechanical soundness of device packaging.
12) CONSTANT ACCELERATION
(UNBIASED, 10kg to 20kg)
This is an accelerated test designed to indicate types or modes of structural and mechanical weaknesses not
necessarily detectable in Mechanical Shock and Variable Frequency Vibration stressing.
13) RELATIVE STRESS COMPARISONS
Many stresses are run at SEC on many different devices. Through both theoretical and actual results, it was
clearly determined which stresses were most effective. Also established were the stresses which weren't fully
effective.
Comparisons have been made on the basis of defects able to be determined, efficiency in detection, and cost.
For the reader's benefit, SEC provides the results of its conclusions on the following pages.
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QUALITY and RELIABILITY
•
3. CUSTOMER SUPPORT SYSTEM
3.1 INTRODUCTION
Manufacturing companies have developed customer support systems for the purpose of uniting communications. Through
these communications pass the information and knowledge required to satisfy the customers needs in areas such as
quality and reliability, customer claims, customer training, field service technical issues, pricing or availability and above
all, trust. Open lines of communication establishes thorough trust between the customer and vendor and are essential
for such programs as dock-to-stock in order to achieve the ultimate in customer/vendor relations. SEC, in its commitment to customer satisfaction, has installed within its organization a support system that is designed to produce the open
lines of communication between all facets of relations for both the customer and SEC.
3.2 POLICY
SEC has developed within its organization, a customer support system. SEC's policy requires that this system be manned with the proper personnel that are thoroughly trained in the areas that each represent and are dedicated to opening
and maintaining lines of communication with the customer. Technical data used by SEC to support the customer must
be up to date and always available for use by the customer (privileged or confidential information maybe excluded). Customer
training is provided to the customer by only the most knowledgeable SEC personnel. SEC will provide customer field
service in the form of periodic goodwill visits to customer sites or specialized problem solving services as required. Process change notification procedures as well as safety standards are also strictly adhered to.
3.3 CUSTOMER SUPPORT SYSTEM
1) QUALITY ASSURANCE SERVICE
SEC has felt the need to reorganize its current Quality Assurance Sections in order to better service our customers.
From this new organizational change, a new QA section was born. This new QA section, known as QA Section 3, was
developed specifically for the customer. The customer service team in QA3, was organized to respond prombtly to
customers quality requirements. The purpose of this team is to form a more responsive communication channel between
plant R&D, the sales department and the customer. Customers will achieve satisfaction with our company's products
by use of the newly organized customer service system. This service system is openly available to customers for
comments concerning problems oropinions about SEC'S devices. An .a00 number is published on the inside of the handbooks cover.
2) CUSTOMER SERVICE TEAM
The following organizational chart illustrates the world-wide base that the customer service team of SEC has established. Maintaining continuity between all of SEC's worldwide customer service teams is accomplished through the use of
a newly installed computer network which allows constant communication between all teams.
CIS ORGANIZATION
. ASIA
SEOUL,KOREA
TOKYO, JAPAN
TAIPEI, TAIWAN
HONG KONG
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AMERICA
SAN JOSE, CA
CHICAGO,IL
BOSTON,MASS
EUROPE
FFT, WEST GERMANY
LONDON, U.K
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QUALITY and RELIABILITY
3) CUSTOMER CLAIM SUPPORT SYSTEM
Information from the field concerning quality is an essential factor for the improvement of product quality. Equally important, is the investigation of field failures. Timely feedback of the results from the analysis is required to better service
customers properly. This data also serves as a direct guide to the improvement of reliability and quality for both SEC
and our customers.
The flowchart below demonstrates the process in which SEC currently follows for customer claims.
CLAIM SUBMITTED
CLAIM RECEIVED
PRELIMINARY REPORT
FINAL REPORT
FOLLOW UP AND FEEDBACK
TO MANUFACTURING
NOTIFY CUSTOMER OF
COMPLETED CIA AND THEIR RESULTS
4) CUSTOMER TRAINING SYSTEM
SEC has recently established a training team for the purpose of teaching SEC's customers the methods currently used
by SEC to insure the product quality and reliability at the customers site. SEC offers this training in the form of group
seminars or presentations and when requested or deemed necessary, individualized training is offered. In some cases,
the training will take place at the customers site at the customers convenience while in other cases, SEC will extend
on invitation to the customer to visit our manufacturing site.
5) CUSTOMER FIELD SERVICE
SEC has developed field service teams that are devoted to making customer contact when there aren't any problems.
In other words, SEC is interested in making periodic goodwill visits. The visiting team would be comprised of those managers
and engineers that are involved with the product types that the customer currently uses. The main goal of this team
is to establish customer trust through communication.
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QUALITY and RELIABILITY
I
3.4 PROCESS CHANGE NOTIFICATION SYSTEM (PCN)
Changes in a process are sometimes required to produce a high~r quality product at a lower price. These changes can
include new or different types of material, new or modified designs and new or different processes. SEC has developed
a PCN procedure that is followed whenever a major or critical change is to be considered for any process. The idea
behind the PCN is to allow change to a process by submitting the planned change for qualification by SEC engineering
and then presenting the PCN to the customer for final approval. By following this procedure, the customer is assured
that no major or critical change will occur to the process without the customers consent.
ENGINEER INFORMATION NOTICE
DECIDE PCN AREA
CHECK ELECTRICAL -CHARACTERISTICS
No
No
Reject Change
3.5 SAFETY STANDARDS
Most customers express the desire to use only products which have been manufactured with materials that meet the
safety specifications of the Underwriters Laboratories: SEC has chosen to adhere to the specifications called out in the
UL standard 94 by purchasing and using only those plastic materials that conform to this standard. UL 94 tests for a
number of different flammability conditions that effect the'plastic material used in semiconductor devices including horizontal
burning, vertical burning and flame spread.
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QUALITY and RELIABILITY
4. FAILURE ANALYSIS
4.1 PROCEDURE
A general failure analysis procedure is shown below. The method demonstrated in the flow chart applies to all rejects.
However, each analysis is specific unto itself, so that a completely exhaustive analytical flow is impossible for the limits
of this manual. Specific instances and examples of interest are provided later in the chapter. Also included in this section
is a typical day-by-day accounting of a failure analysis in progress. A two-week turnaround is the objective, with greater
than 90% of analysis lasting equal to or less than this duration. A sample analysis plan and report are attached at the
conclusion of this section.
Failure Occurred ;
Obtain Sample
Visual Inspection
I
ti
Failure State
Investigation
Retrieval of Past
Failure Examples
I
Electrical Measurement
Curve tracer,
Oscilloscope,
Tester, etc.
Failure Mode Classification
Probable Mechanism
Failure Check
H
Simulation Test
J
I
Fluoroscopy, Leak Test, Backing, Vibration
Test, Aging Under Power Application, etc. HElectrical Measurement
J
L
Parameter Failure
I
Identify Failed Area
I
I
Identify Circuit of
Failed Area
Analyze Characteristics
of Failed Area
I
Determine Failure Mode
I
t
I
I
I
Function/Logic Failure
I
Identify Failed Block
I
I
Identify Failure by
Bench Tester
J
Identify Circuit of
Failed Area
I
I
Analyze Characteristics
of Sensitivity on
Test Parameter
I
Bake (Ion Contamination)
I
I
RetestlRestress
I
DecapNisual Inspection
J
I
Electrical Analysis by
Dynamic Probing
Isolation for Parameter
Analysis
I DecapNisual Inspection I
Layer StripNisual
Inspection/Cross-Section
Conclusion
l Feedback to Manufacturing Process I
J
I
Corrective Action
I
I
I
I
I
I
l-
Failure Analysis Procedure Flow Chart
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QUALITY and RELIABILITY
•
Applicable Comments for the above flow chart are made below.
11) DETERMINATION OF FAILURE MODE
The basic failure mode shall be de1ermined with data from computer and bench testing. As a defect can represent various
electrical failure modes, it is critical to determine the most basic failure mode. (For example, a VoLN oH parameter failure
may be also analyzed as a functional failure. However, it is very important to determine VOL/VOH as the basic failure
mode.)
2) IDENTIFICATION AND ANALYSIS OF FAILED CIRCUIT AREA
Correlation shall be derived with general (macroscopic) failure phenomenon through circuit interpretation of the failed area.
3) SENSITIVITY OF TEST
Parametric value of failed sample shall be determined through adjusting DC and AC parameters, temperature range, etc.
4) ION CONTAMINATION
For a sample assumed to have an inversion phenomenon caused by ionic contamination, characteristics shall be identified by conducting a Ta = 150°C, 24 hour cure and repeating test/restress.
Contamination of a specific layer shall be determined by stripping each layer.
5) DECAPSULATION
There are 5 decap methods with respective merits and demerits. The appropriate method must be utilized on the basis
of the characteristics and potential cause for each failure.
6) ISOLATION AND DYNAMIC PROBING
It is essential to isolate the probable failing part of the circuit for its electrical failure mode. Without isolation, exact detection of a failed part can not be accurately accomplished as an electrical failure mode has an influence on other parts
of the circuit.
7) LAYER STRIPPING
Each layer strip should meet specification requirements with respect to time. It should never be the case that chemical
attack is mistaken for causing the failure of a part.
8) GENERATION OF ACTIVATION ENERGY
Accelerated life testing requires generation of actual activation energies based upon establishing a definitive failure mode.
This generation has a great effect in determining the acceleration factor of Arrehenius' model.
9) CORRECTIVE ACTION
Failure analysis is fully completed only by establishing a future plan and corrective action, which are taken to resolve
a problem and prevent its recurrence.
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QUALITY and RELIABILITY
4.2 Failure Modes and Mechanisms
1) Failure mechanisms for devices vary widely. They are caused by both front-end (wafer) and back-end (assembly) processing. To classify problems and their instigations; the table listed below is provided.
Items and Causes of Failure Modes
. .
Item
Wire
Bonding
Junction
Region
Case
Type of Failure
Failure Mode
Cause
Incomplete
Wire Disconnection
Open
Wire Short
Short
Manufacture or
Purple Plague
Open, High Resistance
Misuse
Bond Detaching
Open,High Resistance
Misplaced Bonding,
Loose Contact
Open, High Resistance
Short
Improper Bond Shape
Erroneous Bonding
Open, High Resistance
Open, High Resistance
Destruction by Surge
--
Hot Spot
Lead
Disconn~ction
Low Breakdown Voltage,
Short, .open
Open, High Resistance
Lead Short
Short, High Leakage
--
Incomplete
Manufacture
Incomplete
Manufacture or
Misuse
Same as above
Incomplete Seal
Seal
Enclosed High
Humidity Gas
--
Breakdown Voltage
Deterioration, High
Leakage
Same as above
Contamination of Surface
Metallization
Dust and Dirt
Short, Low Breakdown Voltage
Large Leakage
High Current Density
Open, Short
Electromigration
Open, High Resistance
Scratch
Open, Short
Insufficient Thickness
Excessive Etching
Open, High Resistance
Incomplete
Manufacture
Open, High Resistance
Incomplete
Manufacture or
Misuse
Contamination, Dust
and Dirt
--
Poor Wiring and Element
Connection
Chip
Mounting
Oxidized
Film
Surface
Treatment
Mask
Material and
Diffusion
Chip Crack
Open, Short
Chip Detaching
Open, Short, High
Thermal Resistance
Misuse
Same as above
Pinhole, Crack
Low Breakdown Voltage, Short
Insufficiently Oxidized
Film Thickness
Low Breakdown Voltage
Incomplete
Manufacture
Channel Formation
Low Breakdown Voltage
High Leakage
Same as above
Mask Misalignment
Low Breakdown Voltage
Short, Open, High Leakage
Same as above
Improper Impurity Density
Same as above
Same as above
Contamination
Insufficient Photoresist
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QUALITY and RELIABILITY
2) Standard product reliability tests can naturally generate failures. Here, in this section, a table is given which lists tests
ana their associated rejects. Each test has a specific purpose, and if there exists a particular product weakness, a
given test will expose it. In this manner, by knowing a test and it's function, a clear determination can be made as
to the relevance of a failure for that particular test.
.Reliability Tests and Associated Failure Modes
Failure Cause
Item
TIC
Test Condition
Diffusion
Oxide
oContamination
oCrystal Defect
oPhotoresist
Reject
oContamination
oPin Hole
oCrack
oThickness
Unstable
-65·C~150·C
200 Cycles
TIS
-65·C .... 125·C
200 Cycles
Metallzation Wire Bonding
oConpos.
oScratch
Package
Environment
Package
Seal
oConductive ions oSealing
olnadequate
Reject
oEnvironments'
Lead Solderability
Fatigue
oConpos. oMarking
Mark
Die bonding
oThemal
Reject Resistance
Reject
oCrack
oChip Position
Reject
oVoid
oOpen
olnteriace
oCorrosion
oMisbonding
oWireOpen
oChemical
Interiace
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
90·98~'oR.H.J65"C3HRS
Moisture
80-98%R.H.J25·C8HRS
Resistance 90-98%R.H.J65"C3HRS
10 Cycles
Vibration
Fatigue
20G·3 Axis
Orientation
f=20 to 2000 cpe
for 4 min. 4 cycles
0
0
Pulse Duration:
Constant
0.1·1m sec
Acceleration
Shock pulse: 0.5-3Kg
0
0
15OOg, 0.5ns
Mechanical
Each Di rection of X, Y
Shock
and Z Axis
0
0
Lead
Integrity
W=227g
90·C 3 times
Marking
Isoprophylalcohol
0
0
Solderability Ta=230· 5 Sec.
Once With Flux
0
Salt Spray
Ta=35·C, 5% NaCI
OPL
Individual Spec
0
0
0
0
0
0
0
IOPL
Individual Spec
0
0
0
0
0
0
0
0
0
HTRB
Individual Spec
HTS
Individual Spec
0
WHTS
80·C, 90% RH
85·C, 85% RH
0
WHTRB
85·C, 85% RH
Bias
0
0
0
0
0
0
0
---
0
0
0
I
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0
0
0
0
0
0
0
0
0
0
31
I
QUALITY and RELIABILITY
3) An anomalous manufacturing step can manifest itself in many ways with respect to product reliability. The chart below
depicts process steps, the types of rejects they can generate, and the way to defect such failures. Of course, there
are numerous QC and Production checks along all stages of the manufacturing process. However, a semiconductor
product typically involves so many operations it's nearly impossible to detect all potential reliability hazards. Thus,
there are final electrical and visual tests, reliability tests, and statistical analyses which are run prior to product releasal.
The chart below speaks to the electrical, visual, and reliability tests.
Failure Mechanisms of Integrated Circuits
Process Step
Affecting
Reliability
Wafer
Fabrication
Failure Mechanism
Failure Mode
Dislocation and Stacking
Fault
Degradation of Function
Characteristics
Electrical Test
Operation Life
Non-Uniform Resistivity
Unpredictable Characteristic
Values
Electrical Test
Surface Abnormalities
Improper Electrical
Characteristics,
Short and Open
Electrical Test
Operation Test
Cracks, Chips,
Scratches (Usually
Caused During Handling)
Open and Short
Electrical Test
Visual Inspection
(Before Seal)
Temperature Cycling
Contamination
Degradation of Junction
Characteristics
Visual Inspection (Before
Seal), Temperature
Cycling, High Temperature
Storage, .Reverse Bias
Cracks and Pin Holes
Shorts, Low Breakdown
Voltage
Temperature Cycling
High Temperature Storage
High-Voltage Test,
Operation Life
Visual Inspection
(Before Seal)
Non-Uniformity of Film
Thickness
Low Breakdown Voltage
Increase of Leakage Current
in Oxide Film
Same as Above
Scratch, Crack, Scar of
Photo Mask
,
Open,Short
Visual Inspection (Before
Seal),
Electrical Test
Misalignment
Open, Short
Same as Above
Abnormality of PhotoResist Pattern (LineWidth, Space, Pin Hole)
Degradation of Characteristics
Due to Parameter Drift
Open,Short
Same as Above
Improper Elimination of
Oxide Film
Open, Short, Intermittent
Failure
Visual Inspection (Before
Seal)
Electrical Test
Operation Life
Under-Cut
Short or Open in
Metallization
Visual Inspection
(Before Seal)
Electrical Test
Passivation
Mask
Failure Detection Method
Etching
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--
--
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QUALITY and RELIABILITY
•
Failure Mechanisms of Integrated Circ'uits (Continued)
Process Step
Affecting
Reliability
Etching
Diffusion
Metallization
I Die Separation
Failure Mechanism
Failure Detection Method
Spotting (Smear)
Inhomogeneous Etching
Latent Short
Visual Inspection
(Before Seal)
Temperature Cycle.
High Temperature Storage
Operation Life
Contamination
(Photo Resist. Residue
of Chemical Substance)
Low Breakdown Voltage
Increase of Leak Current
Same as Above
Reverse Bias
Improper Control of
Doping Profile
Performance Degradation
Caused by Instability
and Fault
High Temperature Storage
Temperature Cycling
Operation Life
Electrical Test
Scratched and Smeared
Metallization
(Caused During Handling)
Open and Short
Visual Inspection
(Before Seal)
Temperature Cycling
Operation Life
Thin Metallization Due
to Insufficient
Deposition or Oxide
Film Step
Open or High Impedance
Internal Connection
Electrical Test
Operation Life
Temperature Cycle
Oxid Film Contamination
Material Incompatibility
Open Metallization Caused
by Poor Adhesion
High Temperature Storage
Temperature Cycling
Operation Life Test
Corrosion (Residue of
Chemical Substance)
Open Metallization
Visual Inspection
(Before Seal).
High Temperature Storage
Temperature Cycle.
Operation Life
Displacement
Contaminated Contact
High Contact Resistance. Open
Visual Inspection
(Before Seal).
Electrical Test. High
Temperature Storage
Temperature Cycle.
Operation Life
Improper Temperature
and Period for
Metallization
Peeled Metallization
Poor Adhesion
Short
Electrical Test
High Temperature Storage
Temperature Cycle
Operation Life
Cracks and Chips Caused
by Improper Dicing
Open
Visual Inspection
(Before Seal)
Temperature Cycling
Thermal Shock
Vibration Shock
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QUALITY and RELIABILITY
Failure Mechanisms of Integrated Circuits (Continued)
Process Step
Affecting
Reliability
Ole Bonding
Wire Bonding
Failure Mechanism
Failure Detection Method
Void Between Header
and Die
Degradation Due to
Overheating
Radiography, Operation Life
Constant Acceleration
Shock, Vibration
Over-Spreading of
Eutectic Solder
Short, Intermittent Short
Visual Inspection
(Before Seal),
Radiography, Vibration
Shock
Poor Bonding of Die to
Header
Die Crack and Lifting
Visual Inspection
(Before Sealing),
Constant Acceleration,
Shock, Vibration
Mismatching of Materials
Crack or Peeling of Die
Temperature Cycling
High Temperature Storage
Constant Acceleration
Poor Bonding Strength
Open Wire, Open, Lifting
Vibration Shock
.Constant Acceleration
Mismatched Material and
Contaminated Bonding
Pad
Lead Bond Peeling
Temperature Cycling
High Temperature Storage
Constant Acceleration
Shock, Vibration
Formation of
Intermetallic Plague
Open Bonding
High temperature storage,
Temperature Cycling.
Constant Acceleration Shock,
Vibration
Insufficient Bonding
Area or Spacing
Open
Bonding Short
Operation Life Test;
Constant Acceleration,
Shock Vibration,
Visual Inspection
(Before Seal)
Improper Bonding
Arrangement
Open, Short
Visual Inspection
(Before Seal)
Electrical Test
Die Cracks or Chips
Open, Shock
Visual Inspection
(Before Seal)
High Temperature Storage
Temperatu~e Cycling
Constant Acceleration,
Shock Vibration
Excessive Loop or Sag
in Wire
Short to the Case, Substrate
or other Parts of the Leads
Visual Inspection
(Before Seal),
Radiography, Constant
Acceleration, Vibration
Crack, Scratch,
or Scar on Lead
Wire Disconnection Causing
Open, Short
Visual Inspection
(Before Seal),
Constant Acceleration,
Shock Vibration
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QUALITY and RELIABILITY
I
Failure Mechanisms ot Integrated Circuits (Continued)
Process Step
Affecting
Reliability
Sealing
Failure Mechanism
Failure Mode
Failure Detection Method
Insufficent Elimination
of Tail Wire
Short, Intermittent Short
Same as Above
Radiography
Incomplete Hermetic Seal
Performance Degradation,
Shorts and Opens Caused by
Chemical Corrosion and
Moisture
Fine Leak, Gross Leak
Bad Atmosphere in
Package
Performance Degradation Due
to Inversion Layer
Channeling
Operation Life
Reverse Bias, High Temp.
Storage, Temperature
Cycling
Bending or Breaking of
the External Lead
Open
Visual Inspection,
Lead Fatique
Crack or Void in Seal
Glass
Short or Open in Metallization
Due to Leak
Seal, Electrical Test
High Temperature Storage
Temperature Cycling
High'Yoltage Test
Migration on Seal
between Outer Lead and
Metal Case
Intermittent Short
Low \itoltage Test
Electro-Conducting
Particles Floating
in Package
Same as Above
Constant Acceleration, .
Vibration
Radiography
Mismarking
Inoperable
Electrical Test
--
4) Equipment
A listing of important equipment used for failure analysis is shown below in tabular from, SEC's committment to
comprehensive analysis of all relevant rejects necessarily implies a usefulness for key analytical instruments. Constant efforts are made to both use and modify equipment to meet specialized investigations. However, only standard
equipment, not a listing of hybrids (for confidential development purposes), is listed below.
Equipment. for failure analysis
Category
Visual
Item
Application
1. Stereo Microscope
Use for visual inspection
2. SEM (Scanning Electron
Microscope)
Use to inspect the surface or cross-section
of a device at high magnification. Through
voltage contrast techniques, it is
possible to analyze voltage levels
while the device is operating
3. Infrared Microscope
Using the infrared radiation emitted by a
functioning device, a thermal map can be
produced.
4. X-Ray
Use to inspect the bonding wire of
encapsulated devices.
5. Metallugical Microscope
Inspect interconnects, contacts, bonds
6. Radiographic Scope
Inspect bond wires, die attach
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QUALITY and RELIABILITY
Equipment for failure analysis (Continued)
Category
Elemental
Analysis
Item
Used to detect and analyze
contamination on the surface of a die
2. EDX Spectrometer
Used with SEM to analyze elements present
in a device. This is done by measuring
the energy distribution of X-rays produced
by the interaction of primary electrons
and the sample.
3. Differential Interference
Microscope
Used for elemental analysis
4. Electron Probe
Micro Analyzer (EPMA)
5. Ion Micro Mass Analyzer
(IMMA)
Decapsulation
System
Used for current analysis
Spectral analysis of chemical constituents
6. Surface Eveness Micrometer
Measures planarity
7. Differential Scanning
Calorimeter (DSC)
Permits the analysis of glasses and
polymers-especially encapsulation resinsthrough the measurement of reaction heat
8. Thermo Gravimetric Analyser
Used to determine the thermal stability of
polymers and glasses by measuring
variations in mass with temperature.
9. Plasma Etcher
Used to opan devices encapsulated in
epoxy resins, to remove silicon nitride, and
to remove thin oxide films
10. Transmission Electron
Microscope (TEM)
Used for elemental analysis and high
resolution surface on spectron
11. Surface Tunneling
Microscope (STM)
Used for elemental analysis
12. Electron Spectrometry for
Chemical Analysis (ESCA)
Used for elemental analysis
13. Secondary Ion Mass
Spectroscope
Used for elemental analysis
1.
2.
3.
4.
5.
6.
7.
8.
9.
Grinding Machines
Angle Lapping
Evaporation
Diamond Cutter
(Cross Section Cutter)
Molding System
Jet-Etching System
Etching Solution
Hot Plates
Ventilation Hoods
c8SAMSUNG
Electronics
Application
1. Auger Electron
Spectrometer (AES)
Used to decapsulate devices,
. to cut the cross section of die,
to remove a surface layer.
36
QUALITY and RELIABILITY
•
Equipment for failure analysis (Continued)
Item
Category
Electrical
Test
Stress
Test
Application
1. Curve Tracer
2. TR, IC, MOS Tester
3. ESD Simulator
4. LCR Meter
5. DC-Analyzer
6. Noise Tester
7. Logic State Analyzer
8. Manipulator Probe Ssytem
9. Electron Beam Tester
10. Hot Electron Analyzer
11. I.R Scope
Used to measure electrical
characteristic of devices,
to establish the cause of failure.
1.
2.
3.
4.
5.
Used to stress or cure the failed devices
to identify a failure mechanism.
This is a very important tool for analyzing
degradation phenomena and intermittent
failures.
Temperature Probe System
Constant Temperature Oven
Ovenn for Oper Life Test
Humidity Oven
Vibration System
c8SAMSUNG
Electronics
37
QUALITY and RELIABILITY
Methods and Equipment for Failure Analysis
"."
Contents of Inspection
Item
Eq~ipment for Analysis
External Visual
Check
• Condition of lead, Plating, Soldering,
Welding Area
• Mark, Date Code
• Package damage
• Solderability
• Sealing
Stereo-Optical-Scope x 40
Optical Microscope x 100
Helium leak Detector
Gross leak Detector
(Using Fluorocarbon)
Electrical Test
•
•
•
•
DC Parameter, AC Parameter Test
Function Test
Margin Test of Voltage and Temp.
Diode Characteristics between Each
Pin
• Disconnection, Short Circuit and I
or Electrical Characteristic
detected by the above Inspection
IC Tester
Curve Tracer (HP4145)
Oscilloscope
DC Power Supply
• Internal Structure of Device is
Checked Non-Destructively
Soft X-Ray
, Internal Structure is
observed after decapping
Metal Cutting Scissors, Nippers
Cap opener, plastic etcher,
Hot plate, Drill, HN03
Radiography
Decapplng
\
Internal Visual
Check
Internal Structure
Analysis
Simulation Test
• Detection of Defective Spot on the
Chip Surface
• Detection of Discrepancy of Internal
Connection (Metallization, Wire Bond
-ing, Etc.)
• Electrical Characteristics are. :
Checked by Mechanical Prober
• Detection of Hot Spot
• Existence of Foreign Material
Optical Microscope
Micro-Prober
SEM
Laser Cutter
Infrared Micro Scanner
Thermal Plotter
Infrared ~icroscope
• Cross Sectional Analysis of Chips
to Observe Diffusion Layer of
Oxide Film
• Analysis of Metallic Elements
• Removing of Over-Coating Glass and
Aluminum Metallization
Optical Microscope
SEM, MAX, AES, SAM, IMA
Spectrometer
Micro-Prober
• Operational Test on Actual
Equipment
Actual Electronic Equipment
c8SAMSUNG
Electronics
Oscillator (Sine Wave Pulse)
Heat-Gun, Cooling Gas Spray
Thermo-Spot
38
QUALITY and RELIABILITY
4.3 FAILURE MODE EFFECT ANALYSIS (FMEA)
Failure Mode Effect Analysis is a method used for checking if measures are taken against every possible failure in the
design, the manufacturing process, the operating method, etc. For this analysis, factors such as design, manufacturing
process, packaging, and operating method are divided into small units, and its functions are clearly defined. All possible
failure modes are listed for each item, its effect on the product and the cause of each failure is examined. Each item
is then evaluated to clarify the corrective actionto be taken.
Table shows an example of FMEA in the manufacturing process of plastic encapsulated MOS LSI. The incident
column pertaining to the Evaluation Points show the failure rate; Effectiveness column shows the impact of the effect
by the failure of the product, device, or system; and Detectability shows the rate of detection of the failure. These are
individually graded on the basis of ten points. The result is then e"Jaluated by multiplying the points. The larger value
indicates the importance of the item. A counterplan for each iten is then specified and action taken.
Manufacturing Process FMEA Example (Plastic Encapsulated Products)
Process Name
(Process
Function)
Failure Mode
Failure Effect
Failure Cause
Counterplpn
AI metallization
Improper thickness
Lack of AI wiring
Breakage defect
Electromigration
open circuit
Operator's mishandling, dirt/foreign
matter attachment,
poor adjustment of
equipment
Improvement and adjustment
of written working process,
dust control of clean room,
SEM test in the process
Glassivation
Lack of glassivation
film, failure film
thickness
Increased leak current,
improper operation
Dirt/foreign matter
attachment, operator's
mishandling
Dust control of clean room,
improvement and adjustment
of written working process
Visual Inspection
Scratch, die crack, dirt,
spot, residual resist
Open circuit, increased
junction leak current
Mishandling of wafer,
Misclearning of water
Improvement and adjustment
of written working process
Assembly Process
Die Selection
Die crack
Increased junction leak
current, improper
operation
Poor adjustment of
equipment, operator's
mishandling
Corrective action to device
control operator, improvement
and adjustment of written
working process
Die Bonding
Die crack
Die floating
Open circuit, increased
junction leak current,
improper operation
Operator's mishandling
temperature too low
Corrective action to device
control operator, improvement
and adjustment of written
working process, visual
inspection
Wire Bonding
Open bonding,
improper· bonding
position, shorted
bonding wire
Open circuit, short
circuit
Poor bonding strength,
operator's mishandling,
poor adjustment of
equipment, looped
bonding wire, shape
defact
Improvement and adjustment
of written working process,
corrective action to device
control operator, visual
inspection
.c8~SUNG
39
•
QUALITY and RELIABILITY
Manufacturing Process FMEA Example (Plastic Encapsulated Products) (Continued)
Process Name
(Process
Function)
Sealing (Resin)
Lead Surface
Treatment
(plating)
Lead Formation
Marking
Failure Mode
Counterplan
Failure Cause
Open bonding wire,
shorted bonding wire,
package crack,
corrosion
Open circuit, short
circuit, defective
appearance
Poor adjustment of
equipment, insufficient
cure
Ditto
Poor metal-plating
thickness, dirt
Poor soldering, poor
contact
Operator's mishandling
poor adjustment of
equipment, insufficient
cleaning
Adjustment of written working
process, corrective action to
control operator
Abnormal shape, broken Failure inserting in the
lead
printed substrate poor
operation
Operator's mishandling
poor adjustment of
equipment
Ditto
Marking error illegible
marking
Operator's mishandling
insufficient cure
Improvement and adjustment
of written working process
c8SAMSUNG
Electronics
Failure Effect
Operating destruction
40
III
PRODUCT GUIDE
LINEAR ICs
1. FUNCTION GUIDE
•
1.1 Voltage Regulator
A. 3·Terminal Fixed Positive Voltage Regulator
Package
Features
Application
Function
Type
Viry High
Output
Current (3A)
KA78T05
TO·220
LM323
TO·3P
High Output
Current
(lo=1A)
MC78XX
series
TO·220
5V, 6V, BV, 9V, 10V,
Maximum output current lA
11V, l2V, l5V, lBV and
External components are minimized
Internal protection circuit for output short 24V fixed output voltage
KA340TXX
series
TO·220
Output current in excess of 1A
Very low line regulation: 0.01 %
Very low load regulation: 0.3%
Medium
Output
Current
(l o =500mA)
MC78MXX
series
TO·220
SV,6V,8V, 10V, 12V, lSV,
Maximum output current .SOOmA
External components are'minimized
l8V, 20V and 24V
Internal protection circuit for output short fixed output voltage
Low Output
Current
(l o =100mA)
MC78LXXAC TO·92
series
8·S0P
Output current in excess of 3A
Internal thermal overload protection
Internal short circuit current limiting
SV output voltage
SV output voltage
SV,6V,8V, 9V, 10V, 11V,
12V, 15V, 18V and 24V
fixed output voltage
5V, 6V, 8V, 9V, 10V, 12V,
Output current in excess of 100mA
15V, laV and 24V
External components minimized
Internal protection circuit for output short fixed output voltage
B. 3·Terminal Fixed Negative Voltage Regulator
Function
Type
High Output
Current
(10= lA)
MC79XX
series
Medium
MC79MXX
Output Current series
(10 = 500mA)
Low Output
Current
(10= 100mA)
Package
Features
Application
TO·220
Output current in excess of lA
Internal thermal overload protection
Internal short circuit current limiting
-2V, -5V, -6V, -BV, -9V,
-10V,-12V, -15V, -18V
and - 24V fixed output
TO·220
Output current in excess of 500mA
Internal thermal over load protection
Internal short circuit current limiting
"-5V, -6V, -8V, -10V,
-12V, -lSV, -18V and
- 24V fixed output voltage
Output current in excess of 100mA
Internal short circuit current limiting
Extemal components minimized
- 5V output voltage
MC79L05AC TO·92
cSCSAMSUNG
. . Electronics
c'
43
LINEAR les
PRODUCT GUIDE
c. Adjustable Voltage Regulator
Function
Type
Package
Features
Application
Precision
Voltage
Regulator
LM723
14 DIP
14 SOP
Positive or negative supply operation
Series, shunt, switching or floating
operation
0.01 % line and load regulation
Output current up to 150mA without
external pass transistor
Output voltage adjustable
from 2 to 37V
Adjustable
Regulator
LM317
TO-220
Output current in excess of 1.5A
Positive output adjustable from
1.2V to 37V
Internal short circuit current limiting
Floating operation for
high·voltage operation
KA337
TO-220
Output current in excess of 1.5A
Negative output adjustable from
1.2V to 37V
Internal short circuit current limiting
Floating operation for
high-voltage operation
KA350
TO-220
Output current in excess of 3A
Positive output adjustable from 1.2V
to 33V
Internal short circuit current limiting
Floating operation for
high-voltage operation
tKA317L
TO-92
Output current in excess of 100mA
Positive output adjustable from 1.2V
to 37V
Internal short circuit current limiting
Floating operation for
high-voltage operation
tKA317M
TO-220
Output current in excess of 500mA
Positive output adjustable from 1.2V
to 37V
Internal short circuit current limiting
Floati ng operation for
high-voltage operation
tKA337L
TO-92
Output current in excess of 100mA
Negative output adjustable from
-1.2V to - 37V
Internal short circuit current limiting
Floati ng operation for
high-voltage operation
••
=:=SAMSUNG
. . Electronics
44
LINEAR ICs
PRODUCT GUIDE
1.2 PWM Controller
Function
Voltage Mode
PWM Control
IC
Current Mode
PWM Control
IC
Type
KA3524
Package
Features
•
Application
16 DIP
Complete PWM power control circuitry
Internal short circuit current limiting
Complementary output
Output current up to 100mA
Flyback
Voltage
Voltage
Voltage
converter
inverter
step-down
step-up
KA7500
16 DIP
Complete PWM power control circuitry
Dead-time control
Complementary output
Output current up to 200mA
Voltage inverter
Voltage step-down
Voltage step-up
tKA3525A
16 DIP
Adjustable dead-time control
Internal soft-start
Separate oscillator sync terminal
Pulse-by-pulse shutdown
Input undervoltage lockout with hysteresis
Flyback
Voltage
Voltage
Voltage
ttKA35268
18 DIP
Programmable dead time
Under voltage lockout
Programmable soft-start
Digital current limiting
Push-pull converter
Voltage inverter
Voltage step-down
Voltage step-up
tKA3842
8 DIP
14 SOP
Automatic feed forward compensation
Pulse-by-pulse current limiting
Undervoltage lockout with hysteresis
Double pulse suppression
High current totem pole output
Flyback
Voltage
Voltage
Voltage
16 DIP
Programmable pulse-by-pulse
Current limiting
Double pulse suppression
Under voltage lockout
Soft-start capability
Automatic feed forward compensation
Push-pull converter
Voltage inverter
Voltage step-down
Voltage step-up
8 DIP
Low standby current
Voltage inverter
Current Limiting
Voltage step-down
Output switch current of 1.5A
Voltage step-up
Output voltage adjustable from 1.25 to 40V
coverter
inverter
step-down
step-up
converter
inverter
step-down
step-up
-~
ttKA3846
DC to DC
Converter
tKA34063A
KA34063
1.3 Voltage Reference
Function
Type
Package
Features
Application
Adjustable
Reference
KA431
TO-92
8 DIP
8 SOP
Programmable output voltage from Vref
to 36V
Voltage reference tolerance: ±1.0%
Low output noise voltage
Switching regulator
Constant current source
Constant current sink
Reference
KA336
TO-92
Adjustable 4V to 6V
Low temperature coefficient
0.60 dynamic impedance
Fast turn-on
Adjustable shunt regulator
Precision power regulator
c5!SAMSUNG
. . Electronics
45
PRODUCT GUIDE
LINEAR ICs
1.4 Operational Amplifier
Function
OPAMP
Dual
OPAMP
Type
Package
Features
Appllc8!tlon
LM741C/I/E
a DIP
a SOP
Internal frequency compensation
Short circuit protection
Comparator, DC amp,
Multivibrator, Summing amp,
Integrator or differentiator,
Narrow band or BPF
LM301A
a DIP
a SOP
Short circuit protection
External frequency compensation
Variable capacitance
Multiplier
Sine wave oscillator
KF351
a DIP
a SOP
Internally trimmed offset
Voltage: 10mV
Low input bias current
High input impedance: 1012(}
High slew rate: 13V/p,s
Wide gain bandwidth: 4MHz
Hi-Zin inverting amp
Ultra low duty cycle
Pulse generator
Sample and Hold
MC455aC/I
a DIP
a SOP
9SIP
Internal frequency compensation
Low noise operation
Phone pre-amplifier
Tape playback amplifier
MC145aC/I
a DIP
a SOP
9 SIP
Internal frequency compensation
Short circuit protection
Filter
Schmitt trigger
Comparator Multivibrator
LM35a/A
LM25a/A
LM2904
a DIP
a SOP
9 SIP
Internal frequency compensation
for unit gain
Large DC voltage gain
Wide power supply r~nge
Single supply operation
DC summing amplifier
Power amplification
RC active bandpass filter
Compatible with all forms
of logic.
KA5532
a DIP
Low input noise voltage
High gain bandwidth: 10MHz
High slew rate: 9V/p,s
Large supply voltage range:
- ±3 to ±20V
DC Amp
Telephone channel amplifiers
Audio equipment
KA9256
10 SIP HIS
Internal current limiting: Isc = 350mA
Internal frequency compensation
Minimal cross over distortion
High power amplifier
CD motor driver
KF442
a DIP
a SOP
9 SIP
Low supply current: 500p,A (max)
Low input bias current
High input impedance
High gain bandwidth: 1MHz
High slew rate: W/p,s
Active filter
DC summing amplifier
Oscillator
ttKS272
a DIP
Wide range of supply voltage
: 3V-16V
Common mode input voltage
including the negative rail
Battery-powered appl ication
Active filter
Signal buffer
tKF353
a DIP
Low bias current
Wide band width
High input impedance: 45MHz
High slew rate: 13V/p.s
Sample and hold
D/A converter integrator
)
c5CSAMSUNG
-Electronics
46
LINEAR ICs
PRODUCT GUIDE
OPERATIONAL AMPLIFIER
Function
Quad
OPAMP
Type
Package
(Continued)
Features
Application
14 DIP
Low supply current (Max: 6OOttA)
Single supply: DC + 5V - + 30V
Dual supply: DC ± 2.5V - ± 30V
Low offset voltage
Battery-powered application
Energy-conserving application
DC amp
LM324/A
LM224/A
LM2902
14 DIP
14 SOP
Internal frequency compensation
Wide supply voltage range
Single supply: DC 3V - 32V
Dual supply: DC ± 1.5V - ± 16V
Audio power booster
DC amp, Multivibrator
Switch, Comparator
Schmitt trigger
LM348
LM248
14 DIP
14 SOP
Each amplifier is functionally
equivalent to the LM741C
Pin compatible with LM324
Short circuit protection
Comparator with hysteresis
Voltage reference
MC3403
MC3303
14 DIP
14 SOP
Class AB output stage for minimal
crossover distortion
Single or split supply operation
Internal frequency compensation
Comparator with hysteresis
BI-Quad filter
KF347
14 DIP
14 SOP
Low bias current
Wide gain bandwidth: 4MHz
High slew rate: 13V/tts
High input impedance
D/A converter
Sample and hold
Integrator
ttKS274
14 DIP
Wide range of supply voltage
: 3V-16V
Single supply operation
Very low input bias current, Typ 1pA
Battery-powered application
Energy-conserving
application
tKA420
ft
===SAMSUNG
... Electronics
47
I
PRODUCT GUIDE
LINEAR ICs
1.5 Voltage Comparator
Function
Type
Single
LM311
Comparator
Package
Features
Application
8 DIP
8 SOP
Operates from single 5V supply
Maximum input current: 250mA
Maximum offset current: 50nA
Differential input voltage range: ±30V
Multivibrator output is
compatible with DTL and
as well as MOS circuits
voltage controlled oscillator
KA710C/I
14 DIP
Low offset and thermal drift
Compatible with practically
all types of integrated logic
Line receiver
AID converter
Memory sense amplifier
LM393/A
Dual
Comparator LM2903
LM293/A
8 DIP
8 SOP
9 SIP
High precision comparators
Reduced Vas drift over temperature
Eliminates need for dual supply
Allows sensing near ground
Compatible with all form of logic
Power drain suitable for battery
operation
Low input biasing current: 25nA
Low output saturation voltage 250mA
Output voltage compatible
with TTL, DTL, ECL and
CMOS logic system
Basic comparator
Pulse comparator
MOS clock driver
14 DIP
Two independent comparators
Operates from a single 5V
High common mode slew rate
Relay driver
Window detector
Separate differential input and single
output
Strobing each side
Sense amplifier for core memory
Dual comparator with ORed output
Double-ended limit detector
Wide single supply voltage
range or dual supplies
Very low supply current drain
(O.8mA)-independent of supply
voltage (2mW/Comparator at + 5V DC)
Low input biasing current: 25nA
Input common-mode voltage range
included GND
Low output saturation voltage 250mV
at 4mA
Compatible with all forms of logic
Bi-stablemultivibrator
One-shot multivibrator
Time delay generatory
Square wave oscillator
Pulse generator
Limit comparator
Crystal controlled oscillator
LM319
LM219
KA711C/I 14 DIP
14 SOP
Quad
LM339/A
Comparator LM2901
LM239/A
LM3302
14 DIP
14 SOP
c8SAMSUNG
Electronics
48
LINEAR ICs
PRODUCT GUIDE
1.6 Timer
Function
Single
Timer
Dual
Timer
Quad
Timer
Type
Package
Features
•
Application
NE555
8 DIP
8 SOP
Maximum operating frequency: 500KHz Precision timing
Pulse generator
Adjustable duty cycle
KS555KS555H
8 DIP
8 SOP
Low power consumption by using
CMOS process
High speed operation
Wide operation supply voltage:
2 to 18 volts
Pin compatible with NE555
Precision timing
Pulse generator
NE556
14 DIP
14 SOP
TTL Compatible
Dual NE555
Time delay generation
KS556
14 DIP
14 SOP
Low power consumption
by using CMOS process
Pin compatible with NE556
Time delay generation
NE558
16 DIP
Wide supply voltage range: 4.5 to 16V
100mA output current per section
Time period equal RC
Quad monostable
Sequential timing
Precision timing
1.7 Miscellaneous
Function
Type
Voltage to
Frequency
Converter
tKA331
Package
Features
Application
8 DIP
V·F Conversion
F·V Conversion
Wide range of full scale
frequency: 1Hz to 100KHz
Light intensity to
frequency converter
Temperature to frequency
converter
Earth
Leakage
Detector
KA2803
8 DIP
Low power consumption
Built-in voltage regulator
1mA output current pulse to
trigger SCR's
Earth leakage detector
Zero
Voltage
Switch
KA2804
8 DIP
Very few external compontents
Reference voltage output
Supply voltage control
On-Off temperature control
Time proportional temperature
control
Earth
Leakage
Detector
KA2807
8 DIP
Full advantage of the UL943
Direct interface to SCR
Trip time in normal
Earth leakage detector
..
=SAMSUNG
. . Electronics
49
LINEAR ICs
PRODUCT GUIDE
2. CROSS REFERENCE GUIDE
2.1 Voltage Regulator
A. 3·Terminal Fixed Positive Voltage Regulator
Description
KA78TXX
Series
(l o =3A)
SAMSUNG
MOTOROLA
KA78T05
ttKA78T06
ttKA78T08
ttKA78T12
ttKA78T15
ttKA78T18
ttKA78T24
FAIRCHILD
NEC
MATSUSHITA
MC78T05
MC78T06
MC78T08
MC78T12
MC78T15
MC78T18
MC78T24
TO·220
TO·3P
LM323 (10 = 3A)
LM323
LM323
MC78XXAC/C
Series
(10= 1A)
MC7805AC/C
MC7852C
MC7806AC/C
MC7808AC/C
MC7885AC/C
MC7809AC/C
MC7810AC/C
MC7811AC/C
MC7812AC/C
MC7815AC/C
MC7818AC/C
MC7824AC/C
MC7805AC/C
p,A7805
p,PC7805
AN7805
MC7806AC/C
MC7808AC/C
p,A7806
p,A7808
p,A7885
p,PC7808
AN7806
AN7808
MC7812AC/C
MC7815AC/C
MC7818AC/C
MC7824AC/C
p,A7812
p,A7815
p,A7818
p,A7824
p,PC7812
p,PC7815
p,PC7818
p,PC7824
AN7812
AN7815
AN7818
AN7824
KA340XX
Series
(10= 1A)
MC78MXXC
Series
(10 = 0.5A)
MC78LXXAC
(10= O.lA)
TO·220
TO·220
LM340·12
LM340·15
LM340·18
LM340·24
MC78M05C
MC78M06C
MC78M08C
MC78M10C
MC78M12C
MC78M15C
MC78M18C
MC78M20C
MC78M24C
MC78L26AC
MC78L05AC
MC78L62AC
MC78L08AC
MC78L82AC
MC78L10AC
MC78L09AC
MC78L12AC
MC78L15AC
MC78L18AC
MC78L24AC
TO·3P
LM340·5.0
LM340·6.0
LM349·8.0
tKA340T05
tKA340T06
tKA340T08
tKA340T09
tKA340T10
tKA340T11
tKA340T12
tKA340T15
tKA340T18
tKA340T24
Package
MC78M05C
MC78M06C
MC78M08C
p,A78M05C
jlA78M06C
p,A78M08C
MC78M12C
MC78M15C
MC78M18C
MC78M20C
MC78M24C
p,A78M12C
p,A78M15C
MC78L05AC
jlA78L05AC
p,A78L62AC
MC78L08AC
I
p,PC78M08
p,PC78M10
p,PC78M12
p,PC78M15
p,PC78M18
jlPC78M20
p,PC78M24
p,A78M20C
p,A78M24C
I
I
AN78M05
AN78M06
AN78M08
AN78M10
AN78M12
AN78M15
AN78M18
AN78M20
AN78M24
TO·220
TO·92
SOP
a
I
I
I
MC78L12AC
MC78L15AC
MC78L18AC
MC78L24AC
jlPC78M05
jlA78L82AC
p,A78L10AC
p,A78 L09AC
p,A78L 12AC
p,A78L 15AC
I
t New Product
tt Under Development
qsSAMSUNG
Electronics
50
PRODUCT GUIDE
LINEAR ICs
B. 3·Terminal Fixed Negative Voltage Regulator
Description
MC79XXC
Series
(l o =1A)
MC79MXXC
(l o =O.5A)
MC79LXXAC
(10= O.1A)
SAMSUNG
MOTOROLA
FAIRCHILD
MC7902C
MC7905C
MC7906C
MC7908C
MC7912C
MC7915C
MC7918C
MC7924C
MC7905C
MC7906C
MC7908C
MC7912C
MC7915C
MC7918C
MC7924C
p,A7905
p,PC7905
p,A7908
p,A7912
p,A7915
p,PC7908
p,PC7912
p,PC7915
p,PC7918
p,PC7924
MC79M05C
p,A79M05
MC79M12
MC79M15
p,A79M08
p,A79M12
p,A79M15
MC79M05C
MC79M06C
MC79M08C
MC79M12C
MC79M15C
MC79M18C
MC79M24C
MC79L05AC
ttMC79L12AC
ttMC79L 15AC
ttMC79L 18AC
ttMC79L24AC
NEC
MATSUSHITA
•
Package
TO-220
AN 7905
AN 7906
AN7908
AN7912
AN7915
AN7918
AN 7924
TO-220
TO-92
MC79L05AC
MC79L12AC
MC79L15AC
MC79L18AC
MC79L24AC
C. Precision Voltage Regulator
Description
Adjustable
Voltage
SAMSUNG
MOTOROLA
FAIRCHILD
LM723
MC1723
p,A723
LM723
LM317
LM317
p,A317
LM317
TO-220
KA337
LM337
LM337
TO-220
33V Regulator
KA33V
Adjustable
Voltage
KA350
NEC
MATSUSHITA
p,PC574
LM350
tKA317L
LM317L
tKA317M
LM317M
tKA337L
LM337L
p,A350
Package
14 DIP/14 SOP
TO-92
LM350
TO-220
LM317M
TO-220
TO-92
TO-92
2.2 PWM Controller
Description
DC to DC
Converter
PWM
Controller IC
SAMSUNG
tKA34063
tKA34063A
MOTOROLA
FAIRCHILD
SGS
UNITRODE
MC34063
MC34063A
Package
8 DIP
KA3524
SG3524
SG3524
KA7500
TL494
p,A494
SG3524
UC3524
16 DIP
UC494AC
16 DIP
tKA3842
UC3842A
UC3842
UC3842
tKA3525A
SG3525A
SG3525A
UC3525A
16 DIP
SG3526
SG35268
UC3526A
18 DIP
UC3846
UC3846
16 DIP
ttKA35268
ttKA3846
c8SAMSUNG
Electronics
8 DIP/14 SOP
51
PRODUCT GUIDE
LINEAR ICs
2.3 Voltage Reference
Description
SAMSUNG
MOTOROLA
FAIRCHILD
KA431
TL431
J-tA431
Adjustable
Reference
(2.5V-36V)
Relerence
I
TI
Package
TL431
TO-92
8 DIP
8 SOP
N/S
5V
KA336
LM336
TO-92
2.5V
KA336
LM336
TO-92
2.4 Operational Amplifier
Description
Single OP Amp
Dual OP Amp
Quad OP Amp
SAMSUNG
MOTOROLA
NATIONAL
FAIRCHILD
LM741
KA301
KF351
MC1741
LM301
LF351
LM741
LM301
LF351
J-tA741
J-tA301
KA5532
LM358/A
LM258/A
LM2904
MC1458
MC4558
KA9256
tKF353
KF442
KS272
tKA420
LM324/A
LM224/A
LM2902
LM348
LM248
MC3403
MC3303
KF347
KS274
LM358/A
LM258
LM2904
MC1458
MC4558
LM358/A
LM258/A
LM2904
LM1458
LF353
LF353
LF442
JRC
NJM741
Others
J-tPC301A
TL081
NJM5532
NJM358
J-tA1458
J-tA4558
NJM2904
NJM1458
NJM4558
NJM353
N E5532, RC5332
TA75358
BA4558
TA7256
TL082
TLC272, ICL7621
I
LM324/A
LM224
LM2902
LM348
LM248
LM3403
MC3303
LF347
LM324/A
LM224/A
LM2902
LM348
LM248
SAMSUNG
MOTOROLA
NATIONAL
FAIRCHILD
Single Comparator
LM311
KA710C
LM311
MC710C
LM311
LM710C
LM311
J-tA710C
Dual Comparator
LM393/A
LM2903
LM293
KA319
KA219
KA711C
LM393/A
LM2903
LM293
LM393/A
LM2903
LM293
LM319
LM219
LM711C
J-tA393
LM339/A
LM2901
LM239
LM3302
LM339/A
LM2901
LM239
LM339/A
LM2901
LM239
LM3302
J-tA339
ILA2901
ILA239
J-tA3302
J-tA324
J-tA224
J-tA2902
J-tA348
J-tA248
J-tA3403
J-tA3303
NJM324
NJM2902
NJM3403
LF347
OP420
TA75324
CA224
J-tPC451
J-tPC3403
J-tPC452
TL084
TLC274, ICL7641
2.5 Voltage Comparator
Description
Quad Comparator
CKSAMSUNG
. . Electronics
JRC
NJM311
NJM2903
Others
J-tPC311
MB4001
TA75393
J-tPC277
NJM319
J-tA711C
NJM2901
TA75339
ILPC177
CA239
CA3302
52
PRODUCT GUIDE
LINEAR ICs
2.6 Timer
Function
Single Timer
SAMSUNG
MOTOROLA
NATIONAL
SIGNETICS
NE555
KS555
KS5357
MC1455
LM555
NE555
Dual Timer
NE556
KS556
Quad Timer
NE558
TI
•
Others
TA75555
TLC555
ICM7555
LM556
NE556
NE555
TLC556
ICM7556
NE558
2.7 Miscellaneous les
Function
Toy Radio
Control Actuator
DC Motor Speed
Controller
SAMSUNG
TOSHIBA
NATIONAL
MATSUSHITA
NEC
Others
3 Function
KA2303
2 Function
KA2304
tKA2309
TA7657D
tKA2310
TA7330
KA2401
Turbo +
7 Function (RX)
Turbo +
7 Function (TX)
J-lPC1470H
KA2402
AN6612
* LA5521 D
KA2404
AN6610
J-lPC1470H
* AN6651
tKA2407
Earth Leakage
Detector
KA2803
LM1851
Earth Leakage
Detector
KA2807
LM1851
Zero Voltage SW
KA2804
FDD Read AMP
KA6201
*HA16631P
Smoke Detector
KS3502
S566
*M54123
J-lPC1701C
Conventional Timer
KS8701
TD6347S
Flasher Controller
KA8702
TA8027P
V/F Converter
KA331
c8SAMSUNG
Electronics
UAA1041
LM331
53
PRODUCT GUIDE
LINEAR ICs
3. ORDERING INFORMATION
KA
oooox
x
X
TL.._________ PACKAGE TYPE (SEE BELOW)
' - - - - - - - - - - - - - - - OPERATING TEMP IC'S ONLY
BLANK: SEE INDIVIDUAL SPEC
C: 0-70°C
I : -40-85°C
M: -55- + 125°C
L...-_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
DEVICE NUMBER AND SUFFIX (OPTIONAL)
X:. IMPROVED VERSION
' - - - - - - - - - - - - - - - - - - - - - - - - - DEVICE FAMILY (SEE BELOW)
DEVICE FAMILY
TRANSISTOR I FET
OKS
• IRF
• IRFA
• IRFP
DALINGTON TR
MOS POWER
MOS POWER, TO-126
MOS POWER, TO-3P
PNPTR
PNP TR
NPNTR
NPNTR
• MMBT TR, SOT-23
• MMBTA TR, SOT-23
• MMBTH TR, SOT-23
TR, SOT-23
• MPS
TR, TO-92
• MPSA
TR, T0-92
• MPSH
TR, TO-92
• PN
MOS POWER, TO-3P
SSH.
MOS POWER, TO-3
SSM
MOS POWER, T0-220
SSP
BIPOLAR TR
• TIP
TR
• 2N
• KSA
KSB
KSC
KSD
INTEGRATED CIRCUIT
KA
KF
KG
KS
KT
• LM
• MC
• NE
SA
SO
KSV
KAD
KDA
LINEAR IC
J-FET OP AMP
GATE ARRAY
CMOS IC
TELECOM
NATIONAL
MOTOROLA
SIGNETICS
LINEAR ARRAY
H.D AND LINEAR ARRAY
AlD-D/A CONVERTER
AID CONVERTER
DIA CONVERTER
PACKAGE TYPE
IC'S ONLY
D
DT
J
K
L
N
PL
R \
T
Z
V
W
S
G
E
SOP
D-PACK
CERAMIC
TO-3P
LCCC
PLASTIC
PLCC
TO-126
TO-220
TO-92
TO-92L
ZIP
SIP
BARE CHIP
SSM
• NOTE: Direct-Replacement parts for products initiated by other manufacturers.
c8SAMSU:NG
Electronics
54
VOL TAGE REGULA TORS
..
..
'. 11,.'
~;
()
.
,.,. 1
.
"
'1:.tJ:;;q.~7'
c
.
. . 1»''''';'
; I
3
LINEAR INTEGRATED CIRCUIT
MC78LXXAC
3-TERMINAL POSITIVE VOLTAGE
REGULATORS
TO·92
These regulators employ internal current-limiting and thermal-shutdown,
making them essentially indestructible. If adequate heat sinking is
provided, they can deliver up to 100mA output current. They are intended
as fixed voltage regulators in a wide range of applications including local
(on-card) regulation for eHmioation of noise and distribution problems
associated with single-point regulation. In addition, they can be used with
power pass elements to make high-current voltage regulators. The
MC78LXXAC used as a Zener diodelresistor combination replacement,
offers an effective output impedance improvement of typically two orders
of magnitude, along with lower quiescent current and lower noise.
1: OUTPUT
2: GND
3: INPUT
1: OUTPUT
2,3,6,7: GND
4,5: N.C
8: INPUT
a SOP
FEATURES
•
•
•
•
•
Output current up to 100mA.
No external components required
Internal thermal overload protection.
Internal short circuit current limiting.
Output voltage of 5V, 6V, 8V,
9V, 10V, 12V, 1SV, 18V, and 24V.
• Output voltage tolerances of ± S% over
the temperature range.
• Complementary negative regulators
offered (MC79LXXAC)
ORDERING INFORMATION
Device
Package Operating Temperature
MC78LXXACZ
TO-92
0- + 125°C
tMC78LXXACD
8-S0P
0-+125°C
SCHEMATIC DIAGRAM
INPUT
R4
•..
OUTPUT
R9
01
R5
~----~------~--~~--~----~----------+---------~--
c8SAMSUNG
Electronics
R10
__--~----oGNO
57
•
LINEAR INTEGRATED CIRCUIT
MC78LXXAC
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Input Voltage (for Vo = 2.6V to 9V)
(for Vo = 12V to 18V)
(for Vo = 24V)
Symbol
Value
Unit
VIN
30
35
40
V
V
V
Operating Junction Temperature Range
Top'
0- + 125
·C
Storage Temperature Range
Tatg
-65 - +150
·C
MC78LOSAC ELECTRICAL CHARACTERISTICS
VIN =10V, lOUT =40mA, ()OC :sTj:s 125°C, CIN =0.33"F, COUT =0.1 p.F, unless otherwise specified. (Note 1)
Characteristic
Output Voltage
Symbol
Vo
Line Regulation
I1Vo
Load Regulation
I1Vo
Output Voltate
Quiescent Current
Test Conditions
T,=25°C
T,=25°C
Tj =25°C
Min
lYP
4.B
Max
Unit
5.0
5.2
V
7V:s VIN:s 20V
55
150
mV
BV:s VIN:s 20V
45
100
mV
1mAslouT s100rnA
11
60
mV
1mAs louT :s4OmA
5.0
30
mV
"NsVIN s2fN
1mAs louTs40mA
4.75
5.25
V
Vo
1VSVIN SVmax
(Note 2)
1mAslouTs70mA
4.75
5.25
V
5.5
mA
Id
Tj =25°C
with line
I1ld
8V:s VIN s 20V
1.5
mA
with load
I1ld
lmA:s louTs40mA
0.1
mA
Output Noise Voltage
VN
T.=25°C,10Hzsfs100KHz
Temperature Coefficient of VOUT
I1Vo
I1T
louT=5mA
Ripple Rejection
RR
f=120Hz,8VsVIN Sl8V, Tj=25°C
Vo
Tj =25°C
Isc
Tj =25°C
140
mA
Quiescent Current
Change
I
I
Dropout Voltage
Peak Output/Short-Circuit Current
c8SAMSUNG
Electronics
2.0
41
40
p.V
-0.65
mVloC
49
dB
1.7
V
58
MC78LXXAC
LINEAR INTEGRATED CIRCUIT
MC78L06AC ELECTRICAL CHARACTERISTICS
(V IN =12V, louT=40mA, 0°C
I
w
..... ~
~
IOUT=I.0ml~IOUT=1lmA
~g 4.0
/! ~
...
..........
~
V,N_tOY
3.0 f - -I---VOIiT .. 5V
~
Tf
!;
o
1\
2.0
I~ II
li~40i
JiJ
2.8
25
50
75
100
2.0
125
4.0
6.0
10
8.0
INPUT VOLTAGE, V
AMBIENT TEMPERATURE, ·C
Fig. 5 RIPPLE REJECTION vs A
FUNCTION OF FREQUENCY
Fig. 6 LINE TRANSIENT RESPONSE
20
400
Y,N =6V to 16V
80
1--1-
MC78L05AC
~~~T=~~A---+i-++l+l!---+-++-++H4--++H+m
Tj=2SoC
I L-~~~Ti~~~~
1---~~~--~++H*--~H+~--+1~~
~
if
300
INP~T VdLT~E
50
4O~~+U~-++W~~~~~~~~
10
~
~w 100
- - - t--
If'..... '
~
!:l
OUTPUT VOLTAGE
ElEV/ATIO,N
g
~
-100 f- ILT =100mA (RESISTllE'hLo)
VOUT=SV
--.
-200
tOO
tK
FREQUENCY, Hz
c8SAMSUNG
Electronics
10K
tOOK
-r--
I-- i - -
1/
I
§
10
15
MC78LOSAC
:e
I
~200
~
I
~
;
!
o
+
i
i
i
10
I
12
TIME,ItS
63
LINEAR INTEGRATED CIRCUIT
MC78LXXAC
Fig. 7
--_.- ._-_.
LOAD TRANSIENT RESPONSE
.
-
---
,
~
:
-1--
+-+-~---LOAd CURRENT
!
_.
Jl~
200
5.0
100
g
oJ
I
1-
is
0
z
iii
w
if
~
!5.
C
E
I
OUTPUTVOLTA&E
DEVIf'TION
IZ
W
a:
a:
;:)
(.)
-1
0
r-V1N_10~
9
VOUT~5V
-2
~
w
>
2.0
~
1.0
-
~~~~ ~~~ciA~~TH= f==
~
ill
0.5
~
0
Q.
9·125" LEAD LENGT~ ""'~
~
0.2 r----i FROM PC BOARD.
FREE.AIR
w
0.1
is
a:
!i
a:
r----,
WITH 7'Z'crw HEAT siNK
---=:~
0.4"JADJ~
FROM PC BOARD.
FREE AIR
-
~0.05
10
"
0.02
20
30
40
50
60
TIME-,.a
,
,
1t.,
0.D1
o
~
25
50
75
lOO
125
150
AMBIENT TEMPERATURE - ·C
APPLICATION INFORMATION
The MC78LXXAC series regulators have thermal overload protection from excessive power, internal short-circuit
protection which limits each circuit's maximum current, and output transistor safe-area protection for red\.lcing
the output current as the voltage across each pass transistor is increased.
Although the internal power dissipation is limited, the junction temperature must be kept below the maximum specified
temperature (125°C) in order to meet data sheet specifications. To calculate the maximum junction temperature or heat
sink required, the following thermal resistance values should be used:
Thermal Considerations
The TO-92 molded package manufactured by SST is capable of unusually high power dissipation due to the lead frame
design. However, its thermal capabilities are generally overlooked because of a lack of understanding of the thermal paths
from the semiconductor· junction to ambient temperature. While thermal resistance is normally specified for the device
mounted 1cm above an infinite heat sink, very little has been mentioned of the options available to improve on the conservatively rated thermal capability.
An -explanation of the thermal paths of the TO-92 will allow the designer to determine the thermal stress he is applying
in any given application.
The TO-92 Package
The TO-92 package thermal paths are complex. In addition to the path through the molding compound to ambient
temperature, there is another path through the pins, in parallel with the case path, to ambient temperature, as shown in
Figure 9.
The total thermal resistance in this model is then:
8JA = (8Jc + 8CA) (8Jl + lilA)
8Jc + liCA + 8Jl + 8lA
Where:
liJC
= thermal resistance of the case between the regulator die and a point on the case directly above the die
location.
8CA = thermal resistance between the case and air at ambient temperature.
liJL = thermal resistance from transistor die through the collector lead to a point 1/16 inch below the regulator case.
8lA = total thermal resistance of the collector-base~emitter pins to ambient temperature.
8JA = junction to ambient thermal resistance.
c8SAMSUNG
Electronics
LINEAR INTEGRATED CIRCUIT
MC78LXXAC
TO-92 Thermal Equivalent Circuit
(PIN at Other Than Ambient Tempera-ture)
TO-92 Thermal Equivalent Circuit
OJL
I
P(WATTS)
P (WATTS)
OCA
Ta
'------+------tI
11------'
Fig. 10
Fig. 9
Methods of Heat Sinking
With two external thermal resistances in each leg of a parallel network available to the circuit designer as variables, he
can choose the method of heat sinking most applicable to his particular situation. To demonstrate, consider the effect of
placing a small 72°C/W flag type heat sink, such as the Staver F1-7D-2, on the 78LXX molded case. The heat sink effectively
replaces the OCA (Figure 10) and the new thermal resistance, OJA = 145°C/W (assuming, 0.125 inch lead length).
The net change of 15°C/W increases the allowable power dissipation to 0.S6W with an inserted cost of 1-2 cents. A still
further decrease in OJA could be achieved by using a heat sink rated at 46°C/W, such as the Staver FS-7A. Also, if the case
sinking does not provide an adequate reduction in total OJA, the other external thermal resistance, OLA, may be reduced by
shortening the lead length from package base to mounting medium. However, one point must be kept in mind. The lead
thermal path includes a thermal resistance, OSA, from the pins at the mounting points to ambient, that is, the mounting
medium, OLA is then equal to OLS + OSA. The new model is shown in Figure 10.
In the case of a socket, OSA could be as high as 270°C/W, thus causing a net increase in OJA and a consequent decrease
in the maximum dissipation capability. Shortening the lead length may return the net OJA to the original value, but pin
sinking would not be accomplished.
In those cases where the regulator is inserted into a copper clad printed circuit board, it is advantageous to have a maximum area of copper at the entry points of the pins. While it would be desirable to rigorously define the effect of PC board
copper, the real world variables are too great to allow anything more than a few general observations.
The best analogy for PC board copper is to compare it with parallel resistors. Beyond some point, additional resistors
are not significantly effective; beyond some point, additional copper area is not effective.
Fig. 11 High Dissipation Applications
VOUT
.......--~
VIN o--~~-
R1
C2
R1
240{J
IL
RL
VOUT
VIN ~-"----I
-IL10·30mA
c8SAMSUNG
Electronics
RL
65
•
LINEAR INTEGRATED CIRCUIT
MC78LXXAC
When it is necessary to operate a MC78LXXAC regulator with a large input-output differential voltage, the addition of
series resistor R1 will extend the output current range of the device by sharing the total power dissipation between R1 and
the regulator.
R1 = VIN (MIN) - VOUT - 2.0V
IL(MAX) + '0
Where 10 is the regulator quiescent current.
R,egulator power dissipation at maximum input voltage and maximum load current is now
PD(MAX) = (V3 - VOUT) IL (MAX) + V310
where V3 = VIN (MAX) - (Ie (MAX) + '0) Rl
The presence of R1 will affect load regulation according to the equation:
load regulation (at constant V IN )
= load regulation (at constant V 3)
+(line regulation, mV per V)
x(R1)x(.!lIL).
As an example, consider a 15V regulator with a supply voltage of 30±5V, required to supply a maximum load current
of 30mA. 10 is 4.3mA, and minimum load current is to be 10mA.
Rl
25 -15 - 2
30+4.3
34.3 = 240n
8
V3 = 35 - (30 + 4.3) x 0.24 = 35.82 = 26.8V
PD(MAX) = (26.8 - 15) 30 + 26.8 (4.3)
=354+ 115
=470mW, which permit operation up to 70°C
in most applications.
Line regulation of this circuit is typically 110mV for an input range of 25 - 35V at a constant load current; i.e. 11mVIV
Load regulation=constant V1 load regulation (typically 10mV, 10 - 30mA ,L)
+(11mVlVxO.24x20mA (typically 53mV)
=63mV for a load current change of 20mA at a constant VIN of 30V.
Fig. 12 Typical Application
INPUTo--------~------~
C1
O.331'F
NOTE 2
. - - - - - - . - - - - - - - 0 OUTPUT
O.1J.F
NOTE 2
Notes
1. To specify an output voltage, substitute voltage value for "xx".
2. Bypass Capacitors are recommended for optimum stability and transient response and should be located as
close as possible to the regulator.
qsSAMSUNG
Electronics
66
KA340TXX
LINEAR INTEGRATED CIRCUIT
TO·220
3-TERMINAL POSITIVE VOLTAGE
REGULATORS
The KA340XX series of three-terminal positive voltage
regulators are available in TO-220 package and with several
fixed output voltages, providing better performance than 78XX
series regulators. These are designed to have outstanding ripple rejection, superior line and load regulation in high power
applications (over 15W). Each type employs internal current
limiting, thermal shutdown and safe area protection.
Although designed primarily as fixed voltage regulators, these
devices can be used with external components to obtain adjustable voltage and currents.
•
FEATURES
•
•
•
•
•
•
•
Maximum output current: 1.5A
Output'voltage of 5,6,8,9, 10, 11, 12, 15, 18, 24V
Superior line and load regulation than 78XX series
Output transistor SOA protection
Internal short-circuit current limit
Thermal overload protection
Output voltage tolerances of ± 4% at 25°C and
±5% over the temperature range
1: Input 2: GND 3: Output
ORDERING INFORMATION
Operating Temperature
BLOCK DIAGRAM
INPUT
STARTING
CIRCUIT
ERROR
AMPLIFIER
GND
c8SAMSUNG
Electronics
67
LINEAR INTEGRATED CIRCUIT
KA340TXX
SCHEMATIC DIAGRAM
.-----.-------..---------------1t--------r----+----_--o VIN
012
014
R16
017
VOUT
R12
R20
01
R18
010
D1
02
R21
L--.--~----*--~~-~--~------1~--~~-~---~~GND
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Input Voltage (for Vo = 5V)
Thermal Resistance Junction-Cases
Thermal Resistance Junction-Air
Junction Operating Temperature
Storage Temperature
Vi
8jc
8ja
Topr
Tst9
35
5
65
V
°C/W
°C/W
°C
°C
c8SAMSUNG
Electronics
o - + 150
-65 -
+ 150
68
KA340TXX
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS KA340T05
(Refer to test circuit, 0°C::5Tj::5125°C, Vi =10V, 10=0.5A, unless otherwise specified)
Characteristic
Output Voltage
Symbol
Vo
Test Conditions
Min
Typ
Max
Tj=25°C,5mA::510::51.0A
4.BO
5.00
5.20
5mA::510::51.0A, PD::515W
Vi = 7.5V to 20V
4.75
Tj = 25°C, Vi = 7V to 25V
6V o
10::51A
Load Regulation
6V o
Tj = 25°C
Quiescent Current
Change
Output Noise Voltage
Ripple Rejection
Dropout Voltage
Peak Output Current
Short-Circuit Current
Average TC of
Vau!
Output Resistance
Id
-
3
50
-
-
50
-
-
25
Vi = 7.5V to 20V
Tj = 25°C
-
-
50
5mA::510::51.5A
-
10
50
0.25A::510::50.75A
-
-
25
-
-
50
Tj =25°C
-
-
B
0°C::5Tj::5125°C
-
-
B.5
5mA::510::51A
Quiescent Cu rrent
5.25
Vi=BV to 12V
Vi=BV to 20V
Line Regulation
-
10= 1A
V
mV
mV
mA
5mA::510::51A
-
-
0.5
6 1d
Tj = 25°C
10::51A, Vi = 7.5V to 20V
-
-
1.0
Vi= 7V to 25V
-
-
1.0
Vn
Ta = 25°C, f = 10Hz to 100KHz
-
40
-
f = 120Hz, Vi = BV to 18V
Tj = 25°C
62
BO
-
f = 120Hz, Vi = 8V to 1BV
0°C::5Tj::5125°C
62
-
-
10 = 1A, Tj = 25°C
-
2.0
-
V
Tj = 25°C
-
2.2
-
A
RR
Vd
Ipeak
•
Unit
mA
p.V
dB
Vi = 35V, Tj = 25°C
-
250
-
mA
6V o /6T
10= 5mA
-
±0.6
-
mV/oC
Ro
f=1KHz
-
17
-
mQ
Isc
* Load and line regulation are specified at a constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
69
LINEAR INTEGRATED CIRCUIT
KA340TXX
ELECTRICAL CHARACTERISTICS KA340T06
(Refer to test circuit, O°C::s;Tj::S; 125°C, Vi = 11V, 10 = 0.5A, unless otherwise specified)
Characteristic
Output Voltage
Min
Typ
Max
Tj = 25°C, 5mA::s; 10::S; 1.0A
5.75
6.00
6.26
5mA::s;lo::s;1.0A, PD::s;15W
Vi = 8.5V to 21V
5.70
Symbol
Vo
Test Conditions
3
60
-
-
60
Vi = 9V/to 13V
-
-
30
Vi = 8.5V to 21V
Tj = 25°C
-
-
60
,r;
Vi =9V to 21V
Lo.V o
10::s;1A
5mA::s;lo::s;1.5A
-
10
60
0.25A::s;io::s;0.75A
-
-
60
Tj = 25°C
-
-
8
O°C::s;Tj::S; 125°C
-
-
8.5
-
0.5
Tj = 25°C
lo::s; 1A, Vi = 8.5V to 22V
-
-
1.0
Vi =8V to 25V
-
-
1.0
Ta=25°C, f=10Hz to 100KHz
-
45
-
f = 120Hz, Vi =9V to 19V
Tj = 25°C
59
75
-
f=120Hz, Vi =9V to 19V
O°C::s;Tj::S; 125°C
59
-
-
Tj = 25°C
Load Regu lation
Lo.V o
5mA::s;lo::s;1A
Quiescent Cu rrent
Id
10= 1A
5mA::s;lo::s;1A
Quiescent Current
Change
Output Noise Voltage
Ripple Rejection
Lo.ld
Vn
RR
6.30
-
Tj =25°C, V i =8V to 25V
Line Regulation
-
30
Unit
V
mV
mV
mA
mA
p.V
dB
Dropout Voltage
Vd
10=1A, Tj =25°C
-
2.0
-
V
Peak Output Current
Ipeak
Tj = 25°C
2.2
A
250
-
Vi = 35V, Tj = 25°C
-
Average TC of Vout
Lo.VolLo.T
10=5mA
-
±0.7
Output Resistance
Ro
f = 1KHz
-
18
Short-Circuit Current
Ise
mA
mV/oC
ma
* Load and line regulation are specified at a constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used .
.c8SAMSUNG
Electronics
'-
."70
KA340TXX
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS KA340T08
(Refer to test circuit, 0°C~Tj~125°C, Vi = 14V, 10 = 0.5A, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
5mA~ lo~ 1.0A
7.70
8.00
8.30
1.0A, PD~15W
Vi = 10.5V to 23V
7.60
-
8.40
80
Tj = 25°C,
Output Voltage
Line Regulation
Vo
5mA~lo~
Tj = 25°C, Vi = 10.5V to 25V
-
3
Vi = 11V to 23V
6V o
10~1A
Load Regulation
/iVo
-
-
80
Vi = 11.5V to 17V
-
-
40
Vi = 10.5V to 23V
Tj = 25°C
-
-
80
5mA~lo~1.5A
-
10
80
0.25A~lo~0.75A
-
-
40
-
-
80
Tj =25°C
-
-
8
O°C~Tj~ 125°C
-
-
8.5
5mA~lo~1A
-
-
0.5
-
1.0
Tj = 25°C
5mA~lo~1A
Quiescent Current
Id
10=1A
Quiescent Current
Change
61d
Tj = 25°C
lo~ 1A, Vi = 10.5V to 23V
-
Vi = 10.5V to 25V
-
-
1.0
Output Noise Voltage
Vn
Ta = 25°C, f = 10Hz to 100KHz
-
52
-
f = 120Hz, Vi = 11.5V to 21.5V
Tj = 25°C
56
72
-
56
-
-
Ripple Rejection
RR
=
f = 120Hz, Vi 11.5V to 21.5V
O°C~Tj~ 125°C
•
Unit
V
mV
mV
mA
mA
p.V
dB
Dropout Voltage
Vd
10 = 1A, Tj = 25°C
-
2.0
-
V
Peak Output Current
Ipeak
Tj = 25°C
-
2.2
-
A
Vi = 35V, Tj = 25°C
-
250
-
mA
Average TC of Vaut
6V o/6T
10=5mA
-
±0.9
-
mV/oC
Output Resistance
Ro
f = 1KHz
-
20
-
mO
Short-Circuit Current
Ise
* Load and I ine regulation are specified at a constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
71
LINEAR INTEGRATED CIRCUIT
KA340TXX
ELECTRICAL CHARACTERISTICS KA340T09
(Refer to test circuit,
0°C~Tj~125°C,
Characteristic
Vi =15V, 10 = 0.5A, unless otherwise specified)
Symbol
Test Conditions
Min
Typ
Max
5mA~ lo~
8.65
9.00
9.35
Tj = 25°C,
Output Voltage
Vo
1.0A
5mA~lo~1.0A, PD~15W
Vi = 11.5V to 24V
Line Regulation
3
90
Vi = 12V to 24V
-
90
45
Ti =25°C
Vi = 12V to 19V
-
-
Vi=11.5V to 24V
Tj = 25°C
-
-
90
5mA~lo~1.5A
-
10
90
0.25A~lo~0.75A
-
-
45
-
-
90
Tj = 25°C
-
-
8
O°C ~Tj ~ 125°C
-
-
8.5
5mA~lo~1A
Quiescent Current
Quiescent Current
Change
Id
61d
_.
Output Noise Voltage
Ripple Rejection
Vn
RR
10= 1A
Peak Output Current
Vd
Ipeak
V
mV
mV
mA
5mA~lo~1A
-
-
0.5
Tj =25°C
10~1A, Vi= 11.5V to 24V
-
-
1.0
Vi = 11.5V to 25V
-
-
1.0
Ta = 25°C, f = 10Hz to 100KHz
-
58
-
f = 120Hz, Vi = 12.5V to 22.5V
Tj = 25°C
56
72
-
56
-
-
10 = 1A, Tj = 25°C
-
2.0
-
V
Tj =25°C
-
2.2
-
A
f = 120Hz, Vi = 12.5V to 22.5V
O°C~Tj~ 125°C
Dropout Voltage
9.40
-
6V o
6V o
-
Tj = 25°C, Vi = 11.5V to 25V
10~1A
Load Regulation
8.60
Unit
mA
p.V
dB
Vi = 35V, Tj = 25°C
-
250
-
mA
Average TC of Vout
6V o/6T
10=5mA
-
± 1.0
-
mV/oC
Output Resistance
Ro
f=1KHz
-
22
-
mQ
Short-Circuit Current
Isc
* Load and line regulation are specified at a constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
72
LINEAR INTEGRATED CIRCUIT
KA340TXX
ELECTRICAL CHARACTERISTICS KA340T10
(Refer to test circuit, 0°C;5;Tj;5;125°C, Vi =16V, 10 = 0.5A, unless otherwise specified)
Characteristic
Test Conditions
Min
Typ
Max
Tj =25°C, 5mA~lo~1.0A
9.60
10.00
10.40
5mA.!5:lo.!5:1.0A, PD~15W
Vi = 12.5V to 25V
9.50
Symbol
I
Unit
---
Output Voltage
Line Regulation
Vo
-
3
100
Vi = 13V to 25V
-
-
100
Vi = 13V to 20V
-
-
50
Vi = 12.5V to 25V
Tj = 25°C
-
-
100
100
6V o
Tj =25°C
6V o
5mA.!5:lo.!5:1.5A
-
10
0.25A.!5: 10.!5: 0.75A
-
-
50
-
-
100
Tj =25°C
-
-
8
0° C .!5: Tj.!5: 125 ° C
-
-
8.5
5mA.!5:lo.!5:1A
Quiescent Current
Quiescent Current
Change
Output Noise Voltage
Id
6 1d
Vn
10= 1A
0.5
-
-
1.0
Vi = 12.6V to 25V
-
-
1.0
Ta = 25°C, f = 10Hz to 100KHz
-
58
-
56
72
-
f = 120Hz, Vi = 13V to 23V
0°C.!5:Tj.!5:125°C
56
-
-
10 = 1A, Tj = 25°C
-
2.0
Tj = 25°C
-
2.2
Vi = 35V, Tj = 25°C
-
250
mV/oC
rnn
6V o/6T
10=5mA
-
± 1.1
Ro
f=1KHz
-
24
-
Ipeak
Isc
mA
/tV
dB
Average TC of V aut
Peak Output Current
Short-Circuit Current
mA
-
Output Resistance
Vd
mV
-
-
Dropout Voltage
mV
5mA.!5:lo.!5:1A
Tj = 25°C
RR
V
Tj = 25°C
10.!5: 1A, Vi = 12.6V to 25V
f = 120Hz, Vi = 13V to 23V
Ripple Rejection
10.50
Tj = 25°C, Vi = 12.5V to 25V
10;5;1A
Load Regulation
-
V
A
mA
* Load and line regulation are specified at a constant junction temperature. Changes in Va due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
73
KA340TXX
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS KA340T11
(Refer to test circuit, 0°C:::;;Tj:::;;125°C, Vi = 18V, 10 = 0.5A, unless otherwise specified)
Characteristic
Output Voltage
Line Regulation
Min
Typ
Max
Tj =25°C,5mA:::;;l o :::;;1.0A
11.60
11.00
11.40
5mA:::;;lo:::;;1.0A, PD:::;;15W
Vi = 13.5V to 26V
10.50
Symbol
Va
Test Conditions
-
3
110
Vi = 14V to 26V
-
-
110
Vi = 14V to 21V
-
-
55
Vi = 13.5V to 26V
Tj =25°C
-
-
110
-
10
110
-
55
-
-
110
Tj = 25°C
-
-
8
O°C:::;;Tj:::;; 125°C
-
-
8.5
5mA:::;;lo:::;;1A
-
-
0.5
-
-
1.0
6V o
6V o
Tj = 25°C
5mA:::;;lo:::;;1.5A
0.25A:::;;lo:::;;0.75A
5mA:::;; 10 :::;; 1A
Quiescent Cu rrent
Id
11.50
Tj = 25°C, Vi = 13.5V to 25V
10:::;;1A
Load Regulation
-
10= 1A
Quiescent Current
Change
6 1d
Tj = 25°C
10 :::;; 1A, Vi = 13.7V to 26V
Vi = 13.5V to 25V
-
-
1.0
Output Noise Voltage
Vn
Ta = 25°C, f = 10Hz to 100KHz
-
70
-
72
-
RR
f = 120Hz, Vi = 14V to 24V
Tj = 25°C
55
Ripple Rejection
f = 120Hz, Vi = 14V to 24V
O°C:::;;Tj:::;; 125°C
55
-
-
10 = 1A, Tj = 25°C
-
2.0
-
Dropout Voltage
Vd
Peak Output Current
Ipeak
Short·Circuit Current
Isc
Unit
V
mV
mV
mA
mA
p.V
dB
V
Tj = 25°C
-
2.2
-
A
Vi = 35V, Tj = 25°C
-
250
-
mA
Average TC of Vaut
6V o/6T
10=5mA
-
± 1.3
-
mV/oC
Output Resistance
Ro
f = 1KHz
-
26
-
mO
* Load and line regulation are specified at a constant junction temperature. Changes in Va due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
74
KA340TXX
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS KA340T12
(Refer to test circuit,
O°C~Tj~ 125°C,
Characteristic
Vi = 19V, 10 = 0.5A, unless otherwise specified)
Symbol
Test Conditions
Tj =25°C, 5mA~lo~1.0A
Output Voltage
Vo
5mA~lo~1.0A, PD~15W
Vi = 14.5V to 27V
Line Regulation
Quiescent Current
Change
Id
Lid
11.50
12.00
12.50
11.40
-
12.60
-
4
120
-
-
120
Vi = 16V to 22V
-
-
60
Vi = 14.6V to 27V
Tj = 25°C
-
-
120
120
Tj = 25°C
5mA~lo~1.5A
-
12
0.25A~lo~0.75A
-
-
60
-
-
120
5mA~lo~1A
Quiescent Current
Max
Vi = 15V to 27V
LVo
LVo
Typ
Tj = 25°C, Vi = 14.5V to 30V
10~1A
Load Regulation
Min
Tj = 25°C
10= 1A
-
-
8
8.5
0.5
5mA~lo~1A
-
-
Tj = 25°C
lo~ 1A, Vi = 14.8V to 27V
-
-
1.0
0°C~Tj~125°C
I
Unit
V
mV
mV
mA
mA
--
Output Noise Voltage
Ripple Rejection
Vn
RR
Vi = 14.5V to 30V
-
-
1.0
Ta=25°C, f=10Hz to 100KHz
-
75
-
f = 120Hz, Vi = 15V to 25V
Tj = 25°C
55
72
-
55
-
-
f = 120Hz, Vi = 15V to 25V
0°C~Ti~125°C
Dropout Voltage
Vd
Peak Output Current
Ipeak
Short-Circuit Current
Ise
p.V
dB
10 = 1A, Ti = 25°C
-
2.0
Ti = 25°C
-
2.2
Vi = 35V, Ti = 25°C
-
250
Average TC of Vout
LVolLT
10=5mA
-
± 1.5
Output Resistance
Ro
f=1KHz
-
28
V
A
mA
mV/oC
mf!
* Load and I ine regulation are specified at a constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
75
LINEAR INTEGRATED CIRCUIT
KA340TXX
ELECTRICAL CHARACTERISTICS KA340T15
(Refer to test circuit, 0°C~Tj~125°C, Vi = 23V, 10=0.5A, unless otherwise specified)
Characteristic
Test Conditions
Min
Typ
Max
5mA~ lo~ 1.0A
14.40
15.00
15.60
5mA~lo~ 1.0A, PD~15W
Vi = 17.5V to 30V
14.25
Symbol
Tj = 25°C,
Output Voltage
Line Regulation
Vo
-
4
150
Vi = 18.5V to 30V
-
-
150
Vi = 20V to 26V
-
-
60
Vi = H.7V to 30V
Tj = 25°C
-
-
120
150
6V o
6V o
Tj = 25°C
5mA~lo~1.5A
-
12
0.25A~lo~0.75A
-
-
75
-
-
150
Tj = 25°C
-
-
8
O°C~Tj~ 125°C
-
-
8.5
5mA~lo~1A
Quiescent Current
Quiescent Current
Change
Output Noise Voltage
Ripple Rejection
Id
15.75
Tj =25°C, Vi = 17.5V to 30V
lo~1A
Load Regulation
-
10= 1A
5mA~lo~1A
-
-
0.5
61d
Tj = 25°C
lo~ 1A, Vi = 17.9V to 30V
-
-
1.0
Vi = 17.5V to 30V
-
-
1.0
Vn
Ta = 25°C, f = 10Hz to 100KHz
-
90
-
f = 120Hz, Vi = 18.5V to 28.5V
Tj = 25°C
54
70
-
f = 120Hz, Vi = 15V to 25V
O°C~Tj~ 125°C
54
-
-
RR
Unit
V
mV
mV
mA
mA
IN
dB
Dropout Voltage
Vd
10 = 1A, Tj = 25°C
-
2.0
-
V
Peak Output Current
Ipeak
Tj = 25°C
-
2.2
-
A
Short-Circuit Current
Isc
Vi = 35V, Tj = 25°C
-
250
-
mA
Average TC of Vout
6 Vo/6T
10=5mA
-
± 1.8
-
mV/oC
Output Resistance
Ro
f = 1KHz
-
29
-
mO
* Load and line regulation are specified at a constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
76
KA340TXX
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS KA340T18
(Refer to test circuit, O°C~Ti~ 125°C, Vi = 27V, 10 = 0.5A, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Ti = 25°C,
Output Voltage
Vo
5mA~ lo~ 1.0A
5mA~lo~1.0A, PD~15W
Vi = 21V to 33V
Line Regulation
Quiescent Current
Change
Output Noise Voltage
Ripple Rejection
Id
17.30
18.00
18.70
17.10
-
18.90
5
180
Vi = 22V to 33V
Ti =25°C
-
-
180
Vi = 24V to 30V
-
-
90
Vi ="21 V to 33V
Ti = 25°C
-
-
180
180
5mA~lo~1.5A
-
12
0.25A~lo~0.75A
-
-
90
-
-
180
Ti=25°C
-
-
8
O°C~Ti~ 125°C
-
-
8.5
5mA~lo~1A
Qu iescent Cu rrent
Max
-
6V o
6V o
Typ
Ti = 25°C, Vi =21V to 33V
10~1A
Load Regulation
Min
10= 1A
5mA~lo~1A
-
-
0.5
61d
Ti =25°C
lo~ 1A, Vi =21.5V to 33V
-
-
1.0
Vi = 21V to 33V
-
-
1.0
Vn
Ta= 25°C, f = 10Hz to 100KHz
-
110
-
f = 120Hz, Vi = 22V to 32V
Ti = 25°C
53
69
-
f =120Hz, Vi = 22V to 32V
0° C ~ Ti ~ 125 ° C
53
-
-
-
2.0
-
RR
Dropout Voltage
Vd
10 =1A, Ti
Peak Output Current
Ipeak
Ti
Short"Circuit Current
Isc
Vi
=25°C
=25°C
=35V, Ti =25°C
•
Unit
V
mV
mV
mA
mA
J1.V
dB
V
-
2.2
-
A
-
250
-
mA
Average TC of Vout
6V o /6T
10=5mA
-
±2.2
-
mV/oC
Output Resistance
Ro
f=1KHz
-
32
-
mO
• Load and line regulation are specified at a constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
77
LINEAR INTEGRATED CIRCUIT
KA340TXX
ELECTRICAL CHARACTERISTICS KA340T24
(Refer to test circuit, 0°C;:5;Tj ;:5;125°C, Vi = 33V, 10=0.5A, unless otherwise specified)
Characteristic
Output Voltage
Line Regulation
Min
Typ
Max
Tj =25°C, 5mA;:5; 10;:5; 1.0A
23.00
24.00
25.00
5mA;:5;lo;:5; 1.0A, PD;:5;15W
Vi = 27V to 38V
22.80
-
25.20
Symbol
Vo
Test Conditions
Tj =25°C, V i =27V to 38V
-
5
240
Vi = 28V to 38V
-
240
6V o
10;:5;1A
Vi = 30V to 36V
-
-
Vi = 27V to 38V
Tj =25°C
-
-
240
5mA;:5;lo;:5;1.5A
-
12
240
0.25A;:5; 10;:5; O. 75A
-
-
240
Tj =25°C
Load Regulation
6V o
5mA;:5;lo;:5;1A
Quiescent Current
Quiescent Current
Change
Output Noise Voltage
Ripple Rejection
Id
61d
Vn
RR
10= 1A
120
120
Tj =25°C
-
-
8
O°C;:5;Tj;:5; 125°C
-
8.5
0.5
5mA;:5;lo;:5;1A
-
-
Tj = 25°C
10;:5; 1A, Vi = 28V to 38V
-
-
1.0
Vi = 27V to 38V
-
-
1.0
Ta = 25°C, f = 10Hz to 100KHz
-
170
-
f = 120Hz, Vi = 28V to 38V
Tj = 25°C
50
66
-
f = 120Hz, Vi = 28V to 38V
O°C;:5;Tj;:5; 125°C
50
-
-
Unit
V
mV
mV
rnA
rnA
p.V
dB
Dropout Voltage
Vd
10 = 1A, Tj = 25°C
-
2.0
-
V
Peak Output Current
Ipeak
Tj = 25°C
-
2.2
-
A
Vi = 35V, Tj = 25°C
-
250
-
rnA
Average TC of Vout
6V o/6T
10=5mA
-
±2.8
-
mV/oC
Output Resistance
Ro
f=1KHz
-
37
-
mO
Short-Circuit Current
Isc
* Load and line regulation are specified at a constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
78
KA78TXX
LINEAR INTEGRATED CIRCUIT
----.------~
TO·220
3A POSITIVE VOLTAGE REGULATOR
This family of fixed voltage regulators are monolithic integrated
circuits capable of driving loads in excess of 3.0 amperes. These threeterminal regulators employ internal current limiting, thermal shutdown,
and safe-area compensation.
I
Although designed primarily as fixed voltage regulators, these devices
can be used with external components to obtain adjustable voltages
and currents.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
Output current in excess of 3.0 ampere
Output transistor safe·area compensation
Power dissipation: 25W (To·220)
Internal short·circuit current limiting
Internal thermal overload protection
Output voltage offered in 2% and 4% tolerance
(2% regulators are available in 5, 12 and 15 volt devices)
No external components required
Thermal regulation is specified
Output voltage of 5; 6; 8; 12; 15; 18; 24V
Mass production: KA78T05
Under develop: 6; 8; 12; 15; 18; 24V
1: Input 2: GND 3: Output
ORDERING INFORMATION
Package Operating Temperature
Device
KA78TXXCT
TO-220
KA78TXXCH
TO-3P
0-125°C
BLOCK DIAGRAM
IN PUT
I
1
I
SERIES
PASS
ELEMENT
SOA
PROTECTOR
CURRENT
GENERATOR
OUTP UT
~
3
..~
I
STARTING
CIRCUIT
-
REFERENCE
VOLTAGE
f-.-
ERROR
AMPLIFIER
I
THERMAL
PROTECTION
~
'-'
c8SAMSUNG
Electronics
I
I----
~
GN o
'-'
19
KA78TXX
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Input Voltage (5.0V -12V)
(15V -24V)
VIN
35
40
V
V
Power Dissipation
Po
Internally limited
Thermal Resistance, Junction to Air
Tc =25°C
9 JA
65
°CIW
Thermal Resistance, Junction to Case
9 JC
2.5
°CIW
Operating Temperature Range
Topr
Storage Temperature Range
Ts,g
o to + 125
-65 to
°C
+ 150
°C
KA78T05C, KA78T05AC ELECTRICAL CHARACTERISTICS
(V'N = 10V, 10 = 3.0A, T j = DoC to 125°C, Po.s Pmax , unless oth~rwise specified)
Characteristic
Symbol
Output Voltage
Vo
Line Regulation
/:::,V o
Load Regulation
/:::,V o
Test Conditions
KA78TOSC
Min
Typ
Max
Unit
4.B
5.0
5.2
4.75
5.0
5.25
7.2V .sV'N .s35V, 10 = 5mA, Tj = 25°C
7.2V .sVIN.s35V,"lo= 1.0A, TJ=25°C
7.5V.sV'N.s20V, 10 = 2.0A
B.OV .s VIN.s 12V, 10 = 3.0A
3.0
25
mV
5mA.slo.s3.0A, TJ= 25°C
5mA.s 10.s3.0A
10
15
30
BO
mV
mV
5mA.s 10.s3.0A, Tj = 25°C
5mA.s 10.s3A;
7.3V .sVIN.s20V,5mA.slo.s2A
Voc
Thermal Regulation
REG lhem
Pulse = 10ms, P= 20W,
Ta=25°C
0.002
0.03
%VoIW
Quiescent Current
Id
5mA.slo.s3A, TJ=25°C
5mA.slo.s3A
3.5
4.0
5.0
6.0
mA
mA
Quiescent Current
Change
/:::,10
7.2V.sVIN.s35V,lo=5mA,
TJ=25°C;
7.5V.sVIN.s20V, 10 = 2A;
5mA.slo.s3A
0.1
O.B
mA
Ripple Rejection
RR
BV.sV IN .slBV, f = 120Hz, 10 = 2.0A
75
dB
Dropout Voltage
Vo
10 = 3A, Tj = 25°C
2.2
Output Noise Voltage
VN
10Hz.sf.sl00KHz, Tj =25°C
10
,NNo
mO
2.5
Voc
Output Resistance
Ro
f= 1.0KHz
2.0
Short Circuit Current
Limit
Isc
VIN =35V, TJ=25°C
1.5
Peak Output Current
Ipeak
T j =25°C
5.0
A
Average Temperature
Cofficient of
Output Voltage
/:::,VJ/:::,T
10=5.0mA
0.2
mV/oC
2.5
A
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8SAMSUNG
Electronics
80
LINEAR INTEGRATED CIRCUIT
KA78TXX
KA78T06C ELECTRICAL CHARACTERISTICS
(VIN = 11V, 10 = 3.0V, Tj = O°C to 125°C, Po::S; Pmax , unless otherwise specified)
KA78T06C
Characteristic
Symbol
Test Conditions
5.0mA::s;lo::s;3A, Tj = + 25°C
5.0mA::s;lo::s;3A;
8.3V::s;V IN ::s;21V, 5mA::s;l o::s;2A
Min
Typ
Max
5.75
5.7
6.0
6.0
6.25
6.3
30
Unit
I
V
Output Voltage
Vo
Line Regulation
8.25V ::s; VIN::s; 35V 10 = 5.0mA, Tj = + 25 ° C;
8.25V::s;V IN ::s;35V 10=1.0A, Tj = +25°C;
8.6V::s;VIN::s;21V 10=2.0A
9.0V::s;V IN ::s;13V 10=3.0A
4.0
L:,V o
Load Regulation
L:,V o
5mA::s;lo::s;3A, Tj = +25°C
5mA::s;lo::s;3A
10
15
30
80
mV
0.002
0.03
%VolW
5mA::s;lo::s;3A, Tj = +25°C
5mA::s;lo::s;3A
3.5
4.0
5.0
6.0
mA
8.25V::s;VIN::s;35V, 10=5mA, Tj = +25°C;
8.6V::s;V IN ::s;21V, 10 = 2A;
5mA::s; 10::S; 3.0A
0.1
0.8
Thermal Regulation
Quiescent Current
REG lhenn
Id
Quiescent Current Change
L:,l d
mV
Pulse = 10ms, P = 20W, Ta= 25°C
mA
Ripple Rejection
RR
9V ::s;VIN::s; 19V, f = 120Hz, 10 = 2A
Dropout Voltage
VD
10=3A, T j = +25°C
61
2.2
71
Output Noise Voltage
VN
10Hz::s;f::s; 100KHz, T j = + 25°C
10
dB
2.5
V
p.VlVo
Output Resistance
Ro
f= 1.0KHz
2.0
Short Circuit Current Limit
Isc
VIN = 35V, T j = + 25°C
1.5
Tj = +25°C
5.0
A
10 = 5.0mA
0.3
mV/oC
Peak Output Current
Ipeak
Average Temperature
Cofficient of Output
Voltage
!'No/L:,T
mO
2.5
A
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8SAMSUNG
Electronics
81
KA78TXX
LINEAR INTEGRATED CIRCUIT
KA78T08C ELECTRICAL CHARACTERISTICS
(VIN
=14V, 10 =3.0V, T = O°C to 12S0C, Po;:5; Pmax , unless otherwise specified)
j
Characteristic
Output Voltage
Symbol
Vo
Test Conditions
. S.OmA;:5;lo;:5;3A, Tj = +2SoC
S.OmA;:5;lo;:5;3A; I
10.4V 5,V 1N ;:5;23V, SmA;:5;lo5,2A
Line Regulation
6. Vo
10.3V;:5;V1N ;:5;3SV, 10=5mA, Tj = +2SoC
10.3V;:5; V1N ;:5; 35V, 10 = 1.0A, Tj == + 2SoC
10.7V ;:5;V 1N ;:5; 23V, 10 = 2.0A
11V;:5;V1N ;:5;17V,l o=3.0A
Load Regulation
6. Vo
SmA;:5;lo;:5;3A, Tj = +2SoC
SmA;:5;lo;:5;3A
Thermal Regulation
Quiescent Current
REGtherm
Id
Quiescent Current Change
6. ld
KA78T08C
Unit
Min
Typ
Max
7.7
8.0
8.3
7.6
8.0
8.4
4.0
3S
10
1S
30
80
mV
Voc
mV
Pulse=10ms, P=20W, Ta=2SoC
0.002
0.03
%VolW
SmA;:5;lo;:5;3A, Tj = + 2SoC
SmA;:5;lo;:5;3A
3.S
4.0
S.O
6.0
rnA
10.3V;:5;VIN;:5;35V, 'o=SmA, Tj = +25°C
10.7V;:5;V1N ;:5;23V,l o=2A
SmA;:5;lo;:5;3A
0.1
0.8
rnA
Ripple Rejection
RR
11V;:5;V1N ;:5;21V, f = 120Hz,l o= 2A
Dropout Voltage
Vo
'0=3A, Tj = +2SoC
Output Noise Voltage
VN
10HZ;:5; f;:5; 100KHz, Tj = + 25°C
10
Output Resistance
Ro
f= 1.0KHz
2.0
Isc
V1N = 3SV, Tj = + 2SoC
1.S
Tj = + 2SoC
5.0
A
0.3
mV/oC
Short Circuit Current Limit
Peak Output Current
Average Temperature
Cofficient of Output
Voltage
Ipeak
/':, Vo/6. T 10 = S.OmA
61
71
2.2
dB
2.S
Voc
p.VIVo
mO
2.S
A
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8SAMSUNG
Electronics
82
KA78TXX
LINEAR INTEGRATED CIRCUIT
KA78T12C, KA78T12AC ELECTRICAL CHARACTERISTICS
(VIN
=19V, 10 = 3.0A, T = O°C to 12SoC, Po:S Pmax , unless otherwise noted)
j
KA78T12C
Characteristic
Symbol
Unit
Test Conditions
Min
Output Voltage
Vo
SmA::s; 10::s;3A, TJ= 2SoC
5mA::s;lo::s;3A;
SmA::s;lo::s;2A,14.5V::s;VIN::s;27V
Typ
Max
11.S
12
12.5
11.4
12
12.6
6.0
45
mV
Voc
Line Regulation
6.Vo
14.5Voc ::s;V1N ::s;35Voc, 10 = SmA, T J= 25°C;
14.5Voc::s;VIN::s;35Voc, 10=1.0A, TJ=25°C
14.9Voc::s;VIN::s;27Voc, 10 = 2.0A
16Voc::s;VIN::s;22Voc, 10 = 3.0A
Load Regulation
6. Vo
5mA::s; 10::s;3A, Tj = 25°C
5mA::s;lo::s;3A
10
15
30
80
mV
mV
REG them
Pulse = 10ms, P = 20W,
Ta=25°C
0.002
0.03
%VJW
Quiescent Current
Id
5mA::s; 10::s;3A, Tj = 2SoC
5mA::s;lo::s;3A
3.5
4.0
5.0
6.0
mA
mA
Quiescent Current
Change
14.5Voc::s;VIN ::s;35V oc , 10 = SmA, T j = 25°C;
14.9Voc::s;VIN::s;27Voc, 10 = 2A;
5.0mA::s; 10::S; 3.0A
0.1
0.8
6. l d
Ripple Rejection
RR
15Voc ::S;V 1N ::s; 25V oc ,
f = 120Hz, 10 = 2.0A
Dropout Voltage
Vo
10=3A, Tj =25°C
2.2
Output Noise Voltage
VN
10Hz::s;f::s;100KHz, Tj = 25°C
10
p.VIVo
Output Resistance
Ro
f=1.0KHz
2.0
mQ
Short Circuit Current
Limit
Isc
V 1N = 35V, Tj = 25°C
1.5
Peak Output Current
Ipeak
Tj =25°C
5.0
A
Average Temperature
Cofficient of
Output Voltage
6.VoI6.T
10=5.0mA
0.5
mV/oC
Thermal Regulation
mA
57
dB
67
2.5
2.5
Voc
A
.. Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8~SUNG
83
I
KA78TXX
LINEAR INTEGRATED CIRCUIT
KA78T15C, KA78T15AC ELECTRICAL CHARACTERISTICS
(VIN=23V, 10 = 3.0A, TJ=O°C to 125°C, PoSPmax, unless otherwise noted)
Characteristic
Symbol
Output Voltage
Vo
Line Regulation
6 Vo
Load Regulation
6 Vo
Test Conditions
KA78T15C
Min
Typ
Max
Unit
14.4
15
15.6
14.25
15
15.75
17.6V:sV1N S40V, 10=5mA, Tj = +25°C
17.6V:sV1N S40V, 10 = 1A, Ti = + 25°C
1BV:sVIN:s30V,lo=2.0A;
20V :sV 1N :s26V, 10 = 3.0A
7.5
55
mV
5mA:slo:s3A, Ti= +25°C
5mA:s 10:S 3A
10
15
30
BO
mV
mV
0.002
0.03
%VolW
5mAslos3A, Ti = + 25°C
5mA:slo:s3A;
17.5V oc:s VIN:s30Voc,5mA:slo:s2A
Pulse = 10ms, P = 20W,
Ta= 25°C
Voc
Thermal Regulation
REG thern
Quiescent Current
Id
5mA:slo:s3A, Ti = + 25°C
5mA:slo:s3A
3.5
4.0
5.0
6.0
mA
mA
Quiescent Current
Change
61 0
17.6V :S V1N:s 40V, 10 = 5mA,
Tj = +25°C;
1BV:sV1N :s30V, 10 = 2A;
5mA:slo:s3A
0.1
O.B
mA
2.5
Voc
Ripple Rejection
RR
1B.5Voc:sVIN:s2B.5Voc, f = 120Hz, 10 = 2.0A
Dropout Voltage
Vo
10=3A, Ti= +25°C
Output Noise Voltage
VN
10Hz:sf:s 100KHz, Ti = + 25°C
10
p,VIVo
Output Resistance
Ro
f= 1.0KHz
2.0
mO
Short Circuit Current
Limit
Isc
V1N =40V, Ti= +25°C
1.0
Peak Output Current
Ipeak
Ti= +25°C
5.0
A
Average Temperature
Cofficient of
Output Voltage
6 V o/6 T
10=5.0mA
0.6
mV/oC
55
65
2.2
dB
2.0
A
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8~SUNG
84
KA78TXX
LINEAR INTEGRATED CIRCUIT
KA78T18C ELECTRICAL CHARACTERISTICS
(VIN = 27V, 10 = 3.0V, Tj = O°C to 125°C,
Po~ Pmax ,
unless otherwise specified)
KA78T18C
Characteristic
Symbol
Test Conditions
5.0mA~lo~3A,
Output Voltage
Vo
Unit
Min
18
18.7
17.1
18
18.9
10=5mA, Tj = + 25°C;
10=1A, Tj = +25°C;
21.2V~VIN~33V, 10=2.0A
24V 5V IN 530V, 10 = 3A
9.0
80
5mA~1053A,
10
15
30
80
mV
0.002
0.03
%Vo/W
3.5
4.0
5.0
6.0
mA
0.1
0.8
20.7V~VIN~40V,
6Vo
Load Regulation
6Vo
Thermal Regulation
REG thenn
Quiescent Current
Id
Quiescent Current
Change
6 1d
Max
17.3
Tj = + 25°C
5.0mA~lo~3A;
20.6V~VIN~33V, 5mA~lo~2A
Line Regulation
Typ
20.7V~VIN~40V,
mV
T j = +25°C
5mA~1053A
Pulse=10ms, P=20W, Ta=25°C
5mA510~3A,
Tj = + 25°C
5mA~1053A
20.7V~VIN~40V,
21.2V~VIN533V,
Voe
10=5mA, Tj = +25°C;
10 = 2.0A;
mA
5mA~1053.0A
64
Ripple Rejection
RR
22V 5 VIN 5 32V, f = 120Hz, 10 = 2.0A
Dropout Voltage
Vo
10=3A, Tj = +25°C
Output Noise Voltage
VN
10Hz~f~ 100KHz,
10
p.VIVo
Output Resistance
Ro
f= 1.0KHz
2.0
mO
Output Circuit Current
Limit
Ise
VIN = 40V, Tj = + 25°C
1.0
Peak Output Current
Ipeak
Tj = + 25°C
5.0
A
Average Temperature
Coefficient of
Output Voltage
6Vo/6T
10=5.0mA
0.7
mV/oC
Tj = + 25°C
54
2.2
dB
2.5
2.0
Voe
A
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
qsSAMSUNG
Electronics
85
•
LINEAR INTEGRATED CIRCUIT
KA78TXX
KA78T24C ELECTRICAL CHARACTERISTICS
(V IN =33V, 10 = 3.0A, Tj=O°C to 125°C,
Po~Pmax,
unless otherwise specified)
KA78T24C
Characteristic
Symbol
Test Conditions
Typ
Max
23
24
25
22.B
24
25.2
27V ~VIN~40V, 10 = 5mA, Tj = + 25°C;
27V~VIN~40V, 10=1.0A, Tj = +25°C;
27 .5V ~ VIN ~ 39V, 10 = 2.0A;
30V~VIN~36V, 10=3.0A
12
90
5mA~lo~3A,
10
15
30
BO
mV
0.002
0.03
%Vo/W
3.5
4.0
5.0
6.0
rnA
0.1
O.B
5.0mA~lo~3A,
Output Voltage
Vo
Tj = + 25°C
5.0mA~lo~3A;
27.3V ~VIN~39V,
Line Regulation
/:,V o
Load Regulation
/:,V o
Thermal Regulation
REG therm
Unit
Min
5mA~lo~2A
mV
Tj = +25°C
5mA~lo~3A
Pulse=10mS, P=20W, Ta=25°C
5mA~lo~3A,
Tj = +25°C
Quiescent Current
Id
Quiescent Current
Change
/:, Id
Ripple Rejection
RR
2BV~VIN~38V,
5mA~lo~3A
27V~VIN~40V,
Vae
10=5mA, Tj = +25°C;
10=2A;
27.5V~VIN~39V,
rnA
5mA~lo~3A
f=120Hz, 10=2.0A
51
61
dB
Dropout Voltage
Va
10 = 3A, Tj = + 25 ° C
2.2
Output Noise Voltage
VN
10Hz~f~100KHz,
10
p..VIVo
Output Resistance
Ro
f = 1.0KHz
2.0
mO
Short Circuit Current
Limit
Ise
VIN = 40V, Tj = + 25°C
1.0
Peak Output Current
Ipeak
Tj = +25°C
5.0
A
Average Temperature
Coefficient of
Output Voltage
/:,Vol/:,T
10=5.0mA
1.0
mV/oC
Tj = +25°C
2.5
2.0
Vae
A
• Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
=8SAMSUNG
Electronics
86
KA78TXX
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 1 TEMPERATURE STABILITY
Fig. 2 OUTPUT IMPEDANCE
1.02
10'
~
Vo~5.0V
Y'N Vo = 5.bv
lou,=100mA
w
o
V'N=7.5V
'-Iou,= 1.0A
CO=O
TJ -25'C
~
~
....
=>
Q.
....
5 1.00
c
~
-....-
"""""-I--..
"'~
::;
/
10-'
...........
)
'a:"
:10
o
10- 3
z
0.98
-10
70
110
150
1
10
100
Fig. 3 RIPPLE REJECTION Vs FREQUENCY
iD 80
........
lou,=3.0A
:--..
0
i=
&l
60
\
Q.
Q.
1C
a!
40
z
~
1.0
10
100
1K
t,
.....
\
a!
a:
40
10K
100K
Tr
I
30
1M
10M
0.01
100M
0.1
10
1.0
lou" OUTPUT CURRENT (A)
Fig. 6 QUIESCENT CURRENT Vs OUTPUT CURRENT
5.0
r
3.0
TJ
25'C- I - - 4.0
<"
....
I
.§.
ffi
.§.
ffi
~
TJ _25'C
3.0
=>
2.0
ffi
0
fa
:;
0
.§
Vo =5.0V
V,N =10V
I--Co=O
f= 120Hz
2 C
rl I
FREQUENCY (Hz)
Fig. 5 QUIESCENT CURRENT Vs INPUT VOLTAGE
~
7
60
1C
4.0
0
FREQUENCY (Hz)
V
00M
Ul
a:
w
Q.
Q.
\
20
....
1M
--
iD 80
:s.
0
\
<"
....
100K
Fig. 4 RIPPLE REJECTION Vs OUTPUT CURRENT
Vo =5.0V
V,N =10V
Co=O
TJ =25'C
I
lou,=50mA
z
:s.
"",
J
r--,
a:
10K
100
100
Ul
1K
t,
TJ , JUNCTION TEMPERATURE (OC)
a:
w
.....
J
10- 4
30
•
.--
1.0
0
....
I
I
I
ffi
0
fa
2.0
:;
0
.§
Vo = 5.011
lOU'=1 2.OA _
V
10
20
Y,N, INPUT VOLTAGE (VOc)
c8SAMSUNG
Electronics
30
40
Y'N - Vo = 5.0V
1.0
0.01
0.1
1.0
\
\
\
I
10
lou" OUTPUT CURRENT (A)
87
KA78TXX
LINEAR INTEGRATED CIRCUIT
Fig. 7 DROPOUT VOLTAGE
Fig. 8 PEAK OUTPUT CURRENT
B.O
2.5
~
S
....
......ffi
is
-
I~UT=3.dA
t--.
Z
w
g
2.0
....Z
~
6.0
~TL5'C~
~Jl
w
w
r--.. r-..
Cl
~
a
1.5
>
....
:::l
-
t--.
l!:
:::l
a
e....
r-.. t--.
r-.. r-..
a:
a:
:::l
u
....
~
Qi::r--
r---
IOUT=~
......
4.0
I- TJ =125'C.................
a
J
1.0
:::l
'"
~
~
~~
"~
I"'~
lIO:
~
r-..
-
TJlO'C
2.0
"~
i!t
0
70
30
10
0
150
110
TJ • JUNCTION TEMPERATURE (OC)
Fig. 9 LINE TRANSIENT RESPONSE
0.8
w
~
g
~~
l!:~
5~
I I
0.4
TVJ
0.2
10K
I
B
L.IB=O.7mA over line, load and temperature changes
IB=3.5mA
For example, a 2-ampere current source would require
R to be a 2.5 ohm, 15W resistor and the output voltage
compliance would be the input voltage less 7.5 volts.
Yo, 8.0V to 20V
VIN - Vo~2.5V
The addition of an operational amplifier allows
adjustment to higher or intermediate values while
retaining regulation characteristics. The minimum
voltage obtainable with this arrangement is 3.0 volts
greater than the regulator voltage.
Fig. 1S-CURRENT BOOST WITH SHORT·
CIRCUIT PROTECTION
Fig. 14-CURRENT BOOST REGULATOR
KSA1010 or Equlv.
Input
R
Output
J1~F
J1.0~F
XX = 2 digits of type number indicating voltage.
XX = 2 digits of type number indicating voltage.
The KA78TXX series can be current boosted' with a
PNP transistor. The 2N4398 provides current to 15
amperes. Resistor R in conjunction with the VSE of
the PNP determines when the pass transistor begins
conducting; this circuit is not short-circuit proof. The
input-output differential voltage minimum is increased
by the VSE of the pass transistor.
The circuit shown in Figure 18 can be modified to provide supply protection against short circuits by adding
a short-circuit sense resistor, Rse , and an additional
PNP transistor. The current sensing PNP must be able
to handle the short-circuit current ot the three-terp'linal
regulator. Therefore, an eight·ampere power transistor
is specified.
c8~SUNG
89
•
MC78XXC/ACII
LINEAR INTEGRATED CIRCUIT
3-TERMINAL 1A POSITIVE
VOLTAGE REGULATORS
TO·220
The MC78XX/MC78XXA series of three-terminal positive regulators are
available in the TO-220 package and with several fixed output voltages,
making it useful in a wide range of applications. These regulators can
provide local oncard regulation, eliminating the distribution problems
associated with single point regulation. Each type employs internal
current limiting, thermal shut-down and safe area protection, making
it essentially indestructible. If adequate heat sinking is provided, they
can deliver over 1A output current. Although designed primarily as fixed
voltage regulators, these devices can be used with external components
to obtain adjustable voltages and currents.
M.C78XXI is characterized for operation from - 40°C to + 125°C, and
MC78XXC from O°C to + 125°C.
FEATURES
•
•
•
•
•
Output Current up to 1.SA
Output voltages of 5; 6; 8; 9; 10; 11; 12; 15; 18; 24V
Thermal Overload Protection
Short Circuit Protection
Output Transistor SOA Protection
• No external components required
• Output current in excess of 1A
• Industrial and commercial temperature range
BLOCK DIAGRAM
1: Input 2: GND 3: Output
ORDERING INFORMATION
Device
Package Operating Temperature
MC78XXCT
TO-220
MC78XXACT
TO-220
MC78XXIT
TO-220
IN PUT
0- + 125°C
-40- + 125°C
OUT PUT
SERIES
PASS
ELEMENT
....
~
1
1
f--
3
~~
~
SOA
PROTECTION
I
REFERENCE
VOLTAGE
-
1
CURRENT
GENERATOR
STARTING
CIRCUIT
....
~r
ERROR
AMPLIFIER
Vi =7.3 to 25V
I Vi =8to 12V
Tj =25°C
5.0
6
10=5mA to 1A
0.5
Vi =8 to 25V, 10 =500rnA
0.8
Vi = 7.5 to 20V, T j =25°C
0.8
Output Voltage Drift
Il.Vo
Il.T
10=5mA
Output Noise Voltage
VN
Ri pple Rejection
Unit
V
5
V i =8to 12V
T j =25°C
*Load Regulation
Typ
T j =25°C
Vi = 7.5 to 25V,
10=500mA
* Line Regulation
Min
mV
mV
mA
mA
-0.8
mV/OC
f=10Hz to 100KHz:
Ta=25°C
10
Va
RR
f=120Hz, 10 =500mA
V i =8to 18V
68
dB
Dropout Voltage
Vo
10 =1A, Tj = 25°C
2
V
Output Resistance
Ro
f=1KHz
17
mO
J.tV
Short Circuit Current
Ise
Vi = 35V, T a =25°C
250
rnA
Peak Current
I peak
T j =25°C
2.2
A
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
102
MC78XXC/AC/I
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS MC7806AC
(Refer to the test circuits, Tj =0 to 150°C, 10 =1A, Vi =11V, C i =0.33p,F, Co =0.1p,F unless otherwise specified)
Characteristic
Output Voltage
*Line Regulation
Symbol
Vo
t:J.Vo
Test Conditions
Min
Typ
Max
T j =25°C
5.88
6
6.12
10=5mA to 1A, PD~15W
Vi = 8.6 to 21V
5.76
6
6.24
Vi = 8.6 to 25V,
10 = 500mA
5
60
V i =9 to 13V
3
60
5
60
Tj =25°C
I Vi =8.3 to 21V
•
V
1.5
30
T j =25°C
10=5mA to 1.5A
9
100
10=5mA to 1A
4
100
I Vi =9 to 13V
Unit
*Load Regulation
t:J.V o
10 = 250 to 750mA
5.0
50
Quiescent Current
Id
T j =25°C
4.3
6
10=5mA to 1A
0.5
Quiescent Current Change
t:J.ld
Vi =9 to 25V, 10 =500mA
0.8
Vi =8.610 21V, Tj =25°C
0.8
Output Voltage Drift
t:J.Vo
t:J.T
10=5mA
Output Noise Voltage
VN
Ripple Rejection
Dropout Voltage
mV
mV
mA
mA
-0.8
mV/oC
f=10Hz to 100KHz
Ta=25°C
10
v::
RR
f=120Hz, 10 =500mA
V i =9to 19V
65
dB
Vd
10=1A, T j =25°C
2
V
p,V
Output Resistance
Ro
f=1KHz
17
mO
Short Circuit Current
Ise
V i =35V, Ta=25°C
250
mA
Peak Current
Ipeak
T j =25°C
2.2
A
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
103
LINEAR INTEGRATED CIRCUIT
MC78XXC/AC/I
ELECTRICAL CHARACTERISTICS MC7808AC
(Refer to the test circuits, T j =0 to 150°C, 10 =1 A, Vi = 14V, C i =0.33p,F, Co =0.1 p,F unless otherwise specified)
Characteristic
Output Voltage
Symbol
Vo
Min
Typ
Max
T j =25°C
7.84
8
8.16
10=5mAto 1A, PD.::;;15W
Vi = 10.6 to 23V
7.7
8
8.3
6
80
Test Conditions
Vi = 10.6 to 25V,
10 = 500mA
* Line Regulation
!No
3
80
6
80
Vi =11 to 17V
2
40
Tj =25°C
10 =5mA to 1.5A
12
100
10=5mA to 1A
12
100
10 = 250 to 750mA
5
50
T j =25°C
I
*Load Regulation
Quiescent Current
Quiescent Current Change
!No
Id
Aid
AVo
V
I Vi =10.4 to 23V
V i =11 to 17V
T j =25°C
Unit
5.0
6
10=5mA to 1A
0.5
Vi =11 to 25V, 10=500mA
0.8
Vi =10.6 to 23V, Tj =25°C
0.8
mV
mV
mA
mA
-0.8
mV/oC
f=10Hz to 100KHz
Ta=25°C
10
Yo
RR
f=120Hz,l o=500mA
Vi =11.5 to 21.5V
62
dB
Dropout Voltage
VD
10 =1A, Tj =25°C
2
V
Output Resistance
Ro
f=1KHz
18
mO
Short Circuit Current
Ise
V i =35V, Ta=25°C
250
mA
Peak Current
Ipeak
Tj =25°C
2.2
A
Output Voltage Drift
~
10=5mA
Output Noise Voltage
VN
Ripple Rejection
/l-V
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
104
LINEAR INTEGRATED CIRCUIT
MC78XXC/AC/I
ELECTRICAL CHARACTERISTICS MC7809AC
(Refer to the test circuits, Tj=O to 125°C, 10=1A, Vi =15V, Ci =0.33/lF, Co =0.1/lF unless otherwise specified)
Characteristic
Output Voltage
Line Regulation
Load Regulation
Min
Typ
Max
Tj = 25°C
8.82
9.0
9.18
10=5mA to 1.0A, PD 515W
Vi = 11.2V to 24V
8.65
9.0
9.35
Symbol
Vo
oVo
oVo
Test Conditions
V
Vi = 11. 7V to 25V
10=500mA
6
90
Vi = 12.5V to 19V
4
45
°
Tj =25 C
Vi = 11.5V to 24V
6
90
Vi = 12.5V to 19V
2
45
T) = 25°C
10 = 5mA to 1.0A
12
100
10=5mA to 1.0A
12
100
I
I
10 = 250mA to 750mA
Quiescent Current
Quiescent Current Change
Id
old
Unit
Tj =25°C
5
50
5.0
6.0
Vi = 11.7V to 24V, Tj = 25°C
0.8
Vi = 12V to 25V, 10 = 500mA
0.8
10 = 5mA to 1.0A
0.5
mV
mV
mA
mA
-1.0
mV/oC
VN
f = 10Hz to 100KHz, Ta = 25°C
10
/lVlVo
Ripple Rejection
RR
f = 120Hz, Vi = 12V to 22V
10 = 500mA
62
dB
Dropout Voltage
Vo
10=1.0A, Tj =25°C
2.0
V
Output Resistance
Ro
f = 1KHz
17
m
Output Voltage Drift
Output Noise Voltage
6Vo/6 T
10=5mA
Short Circuit Current
Ishort
Vi = 35V, Tj = 25°C
250
mA
Peak Current
Ipeak
Tj = 25°C
2.2
A
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
qsSAMSUNG
Electronics
105
I
MC78XXC/AC/I
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS MC7810AC
(Refer to the test circuits, T]=O to 125°C, 10=1A, Vi =16V, C1 =0.33JlF, Co=0.1JlF, unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
9.8
10
10.2
9.6
10
10.4
Vi = 12.8V to 26V
10=500mA
8
100
Vi = 13V to 20V
4
50
8
100
Test Conditions
Tj =25°C
Output Voltage
Line Regulation
Vo
10=5mA to 1.0A,
Vi = 12.8V to 25V
6Vo
T=25°C
6Vo
I Vi = 12.5V to 25V
I Vi= 13V to 20V
3
50
Tj =25°C
10 = SmA to "1.5A
12
100
10 = SmA to 1.0A
12
100
I
Load Regulation
Po~15W
10 = 250mA to 750mA
Quiescent Current
Quiescent Current Change
Id
61d
LVJLT
Tj =25°C
5
50
5.0
6.0
10 = 5mA to 1.0A
0.5
Vi = 13V to 26V, 10= 500mA
0.8
Vi = 12.8V to 25V, Tj = 25°C
0.8
Unit
V
mV
mV
mA
mA
-1.0
mV/oC
VN
f = 10Hz to 100KHz, Ta = 25°C
10
p.VNo
Ripple Rejection
RR
f = 120Hz, Vi = 14V to 24V
10=500mA
62
dB
Dropout Voltage
Vo
10 = 1.0A, Tj = 25°C
2.0
V
Output Resistance
Ro
f=1KHz
17
m
Output Voltage Drift
Output Noise Voltage
10=5mA
Short Circuit Current
Ishort
Vi = 35V, Ta=25°C
250
mA
Peak Current
Ipeak
Tj =25°C
2.2
A
• Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
106
MC78XXC/AC/I
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS MC7811AC
(Refer to the test circuits, Tj=O to 125°C, lo=1A, Vi =18V, Ci =0.33J!F, Co =0.1J!F unless otherwise specified)
Characteristic
. Output Voltage
Min
Typ
Max
Tj = 25°C
10.8
11.0
11.2
10 = 5mA to 1.0A, Po.:S 15W
Vi = 13.8V to 26V
10.6
11.0
11.4
10
110
Symbol
Vo
Test Conditions
t:,.V o
Vi = 15V to 21V
I
Tj = 25°C
Vi = 13.5V to 26V
j Vi = 15V to 21V
Tj = 25°C
10 = 5mA to 1.5A
Load Regulation
t:,.V o
10=5mA to 1.0A
10 = 250mA to 750mA
Quiescent Current
Id
Tj = 25°C
4
55
10
110
3
55
12
100
12
100
5
50
5.1
6.0
6.0
Output Voltage Drift
Output Noise Voltage
t:,.ld
,6.Vo/,6. T
Vi = 14V to 27V, 10 = 500mA
0.8
10 = 5mA to 1.0A
0.5
10=5mA
mV
mV
mA
0.8
Vi = 13.8V to 26V, Tj = 25°C
Quiescent Current Change
I
V
Vi = 13.8V to 27V
10 = 500mA
Line Regulation
Unit
mA
-1.0
mV/oC
VN
f=10Hz to 100KHz, Ta=25°C
10
J!VIVo
Ripple Rejection
RR
f = 120Hz, Vi = 14V to 24V
10 = 500mA
61
dB
Dropout Voltage
Vo
10 = 1.0A, Tj = 25°C
2.0
V
Output Resistance
Ro
f=1KHz
18
m
Short Circuit Current
Ishort
Vi = 35V, Tj = 25°C
250
mA
Peak Current
Ipeak
Tj = 25°C
2.2
A
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
107
MC78XXC/AC/I
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS MC7812AC
(Refer to the test circuits, T j =0 to 150°C, '0=1 A, Vi = 19V, C i =0.33p.F, Co =0.1p.F unless otherwise specified)
Characteristic
Output Voltage
Symbol
Vo
Test Conditions
Min
Typ
Max
T j =25°C
11.75
12
12.25
10=5mA to 1A, PD ;s;15W
Vi = 14.8 to 27V
11.5
12
12.5
10
120
4
120
10
120
Vi= 14.8 to 30V,
'0=500mA
* Line Regulation
!1Vo
V i =16 to 22V
T j =25°C
*Load Regulation
!1Vo
Quiescent Current
Id
.)uiescent Current Change
!1ld
I Vi =14.5 to 27V
I Vi =16 to 22V
V
3
60
Tj =25°C
'0=5mA to 1.5A
12
100
'0=5mA to 1A
12
100
5
50
5.1
6
10 = 250 to 750mA
T j =25°C
Unit
10=5mA to 1A
0.5
Vi =15 to 30V, 10 =500mA
0.8
Vi =14.8 to 27V, T j =25°C
0.8
mV
mV
mA
mA
Output Voltage Drift
!1Vo
!1T
'0=5mA
-1
mVloC
Output Noise Voltage
VN
f= 10Hz to 100KHz
Ta=25°C
10
~
Ripple Rejection
RR
f=120Hz, 10 =500mA
Vi =15 to 25V
60
dB
Dropout Voltage
VD
10 =1A, T j =25°C
2
V
mO
Vo
Output Resistance
Ro
f=1KHz
18
Short Circuit Current
Ise
V i =35V, Ta=25°C
250
mA
Peak Current
Ipeak
T j =25°C
2.2
A
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty cycle is used.
c8~SUNG
108
LINEAR INTEGRATED CIRCUIT
MC78XXC/AC/I
ELECTRICAL CHARACTERISTICS MC7815AC
(Refer to the test circuits, Tj =0 to 150°C, 10=1A, Vi = 23V, C i =0.33/tF, Co =0.1~ unless otherwise specified)
Characteristic
Output Voltage
Symbol
Vo
Test Conditions
Min
Typ
T j =25°C
14.7
15
15.3
10=5mA to 1A, Po::515W
Vi = 17.7 to 30V
14.4
15
15.6
10
150
5
150
11
150
Vi = 17.9 to 30V,
'0=500mA
* Line Regulation
t:.vo
Vi =20 to 26V
Tj =25°C
*Load Regulation
eNo
Quiescent Current
Id
Quiescent Current Change
Aid
l
Vi =17.5 to 30V
I Vi =20 to 26V
Max
3
75
12
100
10=5mA to 1A
12
100
5
50
10 = 250 to 750mA
•
V
T j =25°C
10=5mA to 1.5A
T j =25°C
Unit
5.2
6
10=5mA to 1A
0.5
Vi =17.5 to 30V, 10 =500mA
0.8
Vi =17.5 to 30V, T j =25°C
0.8
mV
mV
mA
mA
Output Voltage Drift
AVo
AT
10=5mA
-1
mV/oC
Output Noise Voltage
VN
f =10Hz to 100KHz
Ta=25°C
10
~
Ripple Rejection
RR
f=120Hz, 10 =500mA
Vi =18.5 to 28.5V
58
dB
Dropout Voltage
Vo
10 =1A, Tj =25°C
2
V
Output Resistance
Ro
f=1KHz
19
mO
Short Circuit Current
Ise
V i =35V, Ta=25°C
250
mA
Peak Current
Ipeak
T j =25°C
2.2
A
Vo
._-
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
109
MC78XXC/AC/I
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS MC7818AC
(Refer to the test circuits, T j =0 to 150°C, 10 =1 A, Vi =27V, C i =0.33JtF, Co =0.1 JtF unless otherwise specified)
Characteristic
Output Voltage
Symbol
Vo
Min
Typ
Max
T j =25°C
17.64
18
18.36
10=5mA to 1A, PD 515W
Vi == 21 to 33V
17.3
18
18.7
15
180
5
180
15
180
5
90
T j =25°C
10=5mA to 1.5A
15
100
10==5mA to 1A
15
100
7
50
Test Conditions
Vi == 21 to 33V,
10=500mA
* Line Regulation
tN o
Vi =24 to 30V
T j =25°C
*Load Regulation
tN o
I Vi =20.6 to 33V
I Vi =24 to 30V
10 == 250 to 750mA
Unit
V
rnV
rnV
mA
Quiescent Current
Id
T j ==25°C
10 ==5mA to 1A
0.5
Quiescent Current Change
.:lId
Vi =21 to 33V, 10 ==500mA
0.8
Vi =21 to 33V, T j ==25°C
0.8
Output Voltage Drift
.:lVo
.:IT
10==5mA
-1
mV/oC
Output Noise Voltage
VN
f =10Hz to 100KHz
Ta==25°C
10
~
Ripple Rejection
RR
f==120Hz, 10 ==500mA
V i =22 to 32V
57
dB
Dropout Voltage
5.2
6
mA
Vo
VD
10 =1A, T j ==25°C
2
V
Output Resistance
Ro
f==1KHz
19
rnO
Short Circuit Current
Ise
Vi = 35V, Ta = 25°C
250
mA
Peak Current
I peak
T j =25°C
2.2
A
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
110
LINEAR INTEGRATED CIRCUIT
MC78XXC/AC/I
ELECTRICAL CHARACTERISTICS MC7824AC
(Refer to the test circuits, T j =0 to 150°C, 10 =1 A, Vi = 33V, Ci =0.33/-tF, Co =0.1p.F unless otherwise specified)
Characteristic
Output Voltage
Symbol
Vo
Min
Typ
Max
T j =25°C
Test Conditions
23.5
24
24.5
10=5mA to 1A, PD~15W
Vi = 27.3 to 38V
23
24
25
18
240
Vi = 27 to 38V,
10=500mA
*Line Regulation
AVo
Vi =30 to 36V
I
T j =25°C
*Load Regulation
AVo
Vi =26.7 to 38V
I Vi =30 to 36V
Quiescent Current
Id
6
240
18
240
6
120
15
100
10=5mA to 1A
15
100
7
50
T j =25°C
5.2
Aid
6
Vi =27.3 to 38V, 10 =500mA
0.8
Vi =27.3 to 38V, T j =25°C
0.8
Output Voltage Drift
AVo
AT
10 = 1mA
Output Noise Voltage
VN
Ripple Rejection
mV
mV
mA
0.5
10=5mA to 1A
Quiescent Current Change
I
V
Tj =25°C
10=5mA to 1.5A
10 = 250 to 750mA
Unit
mA
-1.5
mV/oC
f =10Hz to 100KHz
Ta=25°C
10
V;;
RR
f=120Hz, 10 =500mA
Vi =28 to 38V
54
dB
Dropout Voltage
VD
10 =1A, Tj =25°C
2
V
Output Resistance
/-tV
Ro
f=1KHz
20
mQ
Short Circuit Current
Ise
Vi =35V, Ta=25°C
250
mA
Peak Current
Ipeak
T j =25°C
2.2
A
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken
into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
111
LINEAR INTEGRATED CIRCUIT
MC78XXC/ACII
TEST CIRCUITS
Fig. 3 DC Parameters
1
'"
MC78XX
3
'"
VOUT
2
Co :;:
:;:Ci
O.1pF
O.33,..F
17
Fig. 4 Load Regulation
MC78XX
3
1 - - - - + - - - - - - - - - - - 0 VOUT
~~~~~~_OVO
Jl
VO
oV
3O,..s
Fig. 5 Ripple Rejection
5.10
MC78XX
1--__- - 0
VOUl
Rl
2
120Hz
c8SAMSUNG
Electronics
+
112
MC78XXC/ACII
LINEAR INTEGRATED CIRCUIT
APPLICATION CIRCUITS
Fig. 6 Fixed Output Regulator
VIN 0 - - -____- - - 1
Fig. 7 Constant Current Regulator
3
MC78XX
•
MC78XX
.r
COUT
R1
VXX
L--------+------*---+-'--llIO
Notes:
(1) To specify an output voltage, sUbstitute voltage value for "XX."
A common ground is required between the input and the output
voltage. The input voltage must remain typically 2.0V above the output
voltage even during the low point on the input ripple voltage.
(2) CIN is required if regulator is located an appreciable distance from
power supply filter.
(3) COUT improves stability and transient response.
Fig. 9 Adjustable Output Regulator (7 to 30V)
Fig. 8 Circuit for Increasing Output Voltage
VIN
MC78XX
VOUT
2
0.1
pF
lo=VXX+ 1d
R1
VIN
VOUT
R1
0.1pF
I"
0.33"F
10kll
R2
IR1~51d
Vo=VXX (1+R2/R1)+ld R2
c8SAMSUNG
Electronics
113
MC78XXC/AC/I
LINEAR INTEGRATED CIRCUIT
APPLICATION CIRCUIT (continued)
Fig. 100.5 to 10V Regulator
13V-----o VOUT
MC78XX
Q1
+
C
Note: 02 is connected as a diode in order to compensate the
variation of the 01 VBE with the temperature. C allows a
slow rise-time of the Vo
R2
Vo =V xx (1+R,) + VSE
c8SAMSUNG
Electronics
117
•
MC78XXC/AC/I
LINEAR INTEGRATED CIRCUIT
Fig. 25 Light Controllers (yo min = VXX + VBE)
(a)
(b)
MC78XX
VOUT
VIN
VOUT
Vo rises when the light goes up
Va falls when the light goes up
Fig. 26 Protection Against Input Short·Circuit
with High Capacitance Loads
l~
......
,...
1
v."
IN
MC78XX
2
,..
3
Vo UT
+
Z~
~
-,...
-
"
/"/7
Applications with high capacitance loads and an output voltage
greater than 6 volts need an external diode (see fig. 26) to protect
the device against input short circuit. In this case the input voltage
falls rapidly while the output voltage decreases showly. The
capacitance discharges by means of the Base-Emitter junction of
the series pass transistor in the regulator. If the energy is sufficiently
high, the transistor may be destroyed. The external diode by-passes
the current from the Ie to ground.
c8SAMSUNG
Electronics
118
MC78XXC/AC/I
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
FIG. 27 QUIESCENT CURRENT
FIG. 28 PEAK OUTPUT CURRENT
V'N=10V
V ouT=5V
louT=5mA
Tj = 25·C
2.5
5.5
5.25
V
/
A-
V-I - -
I
I
'"I'"
r'-.
1.5
f'
'"f"\."",
.5
4.75
-50
•
6, VOUTI= 100mV
5.75
-25
25
50
75
100
125
o
o
10
15
20
i
30
25
JUNCTION TEMPERATURE (OC)
INPUT·OUTPUT DIFFERENTIAL (V)
FIG. 29 OUTPUT VOLTAGE
FIG. 30 QUIESCENT CURRENT
35
1.02
VIN-Vour=5V
louT=5mA
Tj =25·C
V ouT =5V
louT=10mA
6.5
1.01
I
---
~
5.5
~ t--...
/
I{
"",
.99
V
~
V--
~~
-
4.5
.98
4
-25
25
50
75
JUNCTION TEMPERATURE (OC)
c8SAMSUNG
Electronics
100
125
5
10
15
20
25
30
35
INPUT VOLTAGE (V)
119
LINEAR INTEGRATED CIRCUIT
MC78MXXC/I
3-TERMINAL O.SA POSITIVE
VOLTAGE REGULATOR
TO·220
The MC78MXXC/lseriesofthree-terminal positive regulatorsareavai1able in the TO-220 package with several fixed output voltages, making it useful in a wide range of applications. These regulators can
provide local on-card regulation, eliminating the distribution problems
associated with Single point regulation. Each type employs internal
current limiting, thermal shut-down and safe area protection, making it essentially indestructible. If adequate heat sinking is provided, they can deliver over 0.5 A output current. Although designed
primarily as fixed voltage regulators, these devices can be used with
external components to obtain adjustable voltages and currents.
MC78MXXC is characterized for operation from O°C to 125°C, and
MC78MXXI from -40°C to 125°C.
FEATURES
•
•
•
•
•
•
1: Input 2: GND 3: Output
Output Current up to O.SA
Output Voltages of 5; 6; 8; 10; 12; 15; 18; 20; 24V
Thermal Overload Protection
Short Circuit Protection
Output Transistor SOA Protection
Industrial and commercial temperature range
ORDERING INFORMATION
Device
Package Operating Temperature
MC78MXXCT
TO-220
0- + 125°C
MC78MXXIT
TO-220
-40- +125°C
BLOCK DIAGRAM
IN PUT
....
I
1
f--
REFERENCE
VOLTAGE
I-~
ERROR
AMPLIFIER
OUTP UT
r----,---<)
3
~
~~ R20
SOA
PROTECTION
CURRENT
GENERAlOR
STARTING
CIRCUIT
SERIES
PASS
ELEMENT
... ~
I
~
THERMAL
PROTECTION
1
-
r--
:~
R19
T;:5> 125°C, 10= 350mA, Vi = 33V, unless otherwise specified, Ci = O.33J.tF, Co = O.1J.tF)
Characteristic
Output Voltage
Symbol
Vo
Test Conditions
Min
Typ
Max
T j =25°C
23
24
25
10 = 5 to 350mA
22.8
24
25.2
V
Vi =27to 38V
Vi =27 to
38V
Line Regulation
Load Regulation
Quiescent Current
I'::,.Vo
!::::.Vo
100
I
10 = 200mA
T; =25°C Vi =28to
38V
=
=
I
1
=
=
10 SmA to O.SA, Tj 2SoC
--c-10 SmA to 200mA, TJ 2S °C
480
4.2
6
!::::.Id
!::::.Vo
I'::,.T
Output Noise Voltage
VN
f = 10Hz to 100KHz
Ripple Rejection
RR
f = 120Hz 10=300mA
Vi =28to 38V
Dropout Voltage
VD
Short Circuit Current
Ise
Peak Current
Ipeak
0.8
10=200mA
Vi =27to 38V
Output Voltage Drift
I
10=5mA
T j =0 to 125°C
T; = 25°C, 10 = 500mA
mA
0.5
10 =5mA to 350mA
Quiescent Curlent Change
mV
240
T j =25°C
Id
mV
50
mA
I
-1.2
mV/oC
170
p.V
50
dB
\
2
V
Vi =35V
300
mA
T j =25°C
700
mA
* Tmin
MC78MXXI: Tmin == - 40"C
MC78MXXC: Tmin == O°C
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used .
•
c8SAMSUNG
Electronics
130
LINEAR INTEGRATED CIRCUIT
MC78MXXC/I
APPLICATION CIRCUIT
Fig. 2 Constant current regulator
Fig. 1 Fixed output regulator
I
1--__- - < . ) VOUT
Notes:
(1) To specify an output voltage, substitute voltage value for "XX".
(2) Although no output capacitor is needed for stability, it does
improve transient response.
(3) Required if regulator is located an appreciable distance from
Fig. 4 Adjustable output regulator (7 to 30V)
power supply filter.
Fig. 3 Circuit for increasing output voltage
VOUT
VOUT
R1
IR1
~51d
R2
Vo=Vxx (1+R2/R1)+ld R2
Fig. 5 0.5 to 10V Regulator
13V 31d
* C3 optional for improved transient response and
ripple rejection.
Fig. 4 -
High current negative regulator (-5V14A with
5A current limiting)
0.20
-1OV
c8SAMSUNG
Electronics
141
•
MC79LXXAC
LINEAR INTEGRATED C.IRCUIT
3·TERMINAL NEGATIVE VOLTAGE
REGULATOR
T().92
These regulators employ internal current limiting and
thermal-shutdown, making them essentially
indestructible. The are intended as fixed voltage
re~ulators in a wide range of applications including local
regulator for elimination of noise and distribution
problems associated with single-point regulation.
FEATURES
•
•
•
•
•
•
•
Output current up to 100mA
No external components
Internal thermal over load protection
Internal short circuit current limiting
Available in JEDEC TO·92
Mass production: MC79L05
Under development: -12, -15, -18, -24V
1: GND 2: Input 3: Output
ORDERING INFORMATION
Device
Operating Temperature
MC79LXXACZ
SCHEMATIC DIAGRAM
r---~----------+-----------~--------------------~IOGND
R26
R15
IN
Fig. 1
c8~SUNG
142
LINEAR INTEGRATED CIRCUIT
MC79LXXAC
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Symbol
Value
Unit
Input Voltage ( - 5V)
( - 12V to - 1BV)
(-24V)
VI
-30
-35
-40
VDC
Operating Temperature Range
Topr
0-+ 125
°C
Storage Temperature Range
Tstg
- 65 - + 150
°C
r--
I
MC79L05AC ELECTRICAL CHARACTERISTICS
(Vi = -10V, 10 = 40mA, Ci = 0.33/-tF, Co = 0.1/-tF, O°C:5:Tj:5: + 125°C, unless otherwise specified)
Symbol
Characteristic
Output Voltage
Va
Test Conditions
Tj = 25°C
Line Regulation
D, Va
Tj = 25°C
Load Regulation
D, Va
Tj = 25°C
Output Voltage
Va
Quiescent Current
Quiescent
Current Change
I With
I With
Output Noise Voltage
Id
Line
Load
Id
Min
Typ
Max
Unit
-4.B
-5.0
-5.2
V
-7.0V~Vi~
-20V
150
8.0V~Vi~
- 20V
100
1.0mA:5: 10:5: 100mA
60
1.0mA:5:lo:5:40mA
30
-
-7.0V>Vi> -20V, 1.0mA:5:lo:5:40mA
-4.75
-5.25
Vi= -1.0V, 1.0mA:5:lo:5:70mA
-4.75
-5.25
Tj = + 25°C
6.0
Tj = + 125°C
5.5
- BV ~ Vi ~ - 20V
1.5
1.0mA:5: 10:5: 40mA
0.1
VN
Ta=25°C,10Hz:5:f:5:100KHz
Ripple Rejection
RR
f = 120Hz,
Tj = 25°C
Dropout Voltage
VD
-B.O~Vi~
-1BV
I TJ=250C
41
mV
mV
V
mA
mA
40
/-tV
49
dB
1.7
V
* Load and line regulation are specified at constant junction temperature. Change in Va due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8SAMSUNG
Bectronics
143
MC79LXXAC
LINEAR INTEGRATED CIRCUIT
MC79L12AC ELECTRICAL 'CHARACTERISTICS
(Vi
= -19V, lo=40mA, Ci=0.33ItF, Co=0.1ItF, 0°C::s;T ::s;+125°C, unless otherwise specified)
j
Characteristic
Output Voltage
Test Conditions
Symbol
Vo
Tj =25°C
Line Regulation
6Vo
Tj =25°C
Load Regulation
6Vo
Tj =25°C
Output Voltage
Vo
Quiescent Current
Id
Quiescent
Current Change
I With Line
I With Load
Output Noise Voltage
Id
-14.5V~VI~
Min
Typ
Max
Unit
-11.5
-12.0
-12.5
V
250
-27V
-16V~VI~ - 27V
200
1.0mA::s;lo::s;1oomA
100 '
1.0mA::s; lo::s;40mA
50
-14.5V>VI> -27V, 1.0mA::s;lo::s;40mA
-11.4
-12.6
Vi = -19V, 1.0mA::s;lo::s;70mA
-11.4
-12.6
Tj = +25°C
6.5
Tj = + 125°C
6.0
-16V~VI~
-27V
1.5
1.0mA::s; lo::S; 40mA
0.1
VN
Ta=25°C,10Hz::s;f::s;100KHz
Ripple Rejection
RR
f=120Hz,
Tj =25°C
Dropout Voltage
Vo
Tj =25°C
-15V~VI~-25V
.
37
mV
mV
V
mA
mA
80
ltV
42
dB
1.7
V
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
MC79L15AC ELECTRICAL CHARACTERISTICS
(Vi = -23V, lo=40mA, Ci=0.33ItF, Co=0.1ItF, 0°C::s;Tj::s;+125°C, unless otherwise specified)
Characteristic
Output Voltage
Symbol
Vo
Test Conditions
Tj =25°C
Line Regulation
6Vo
Tj =25°C
Load Regulation
6Vo
Tj =25°C
Output Voltage
Vo
Qu iescent Cu rrent
Id
Quiescent
Cu rrent Change
I With Line
I With Load
Output Noise Voltage
Id
-17.5V~Vi~
-27V~VI~
Min
Typ
-14.4
-15.0
Max
Unit
-15.6
V
' 300
-30V
-30V
250
1.0mA::s;lo::S; 100mA
150
1.0mA::s; lo::s;40mA
75
-17.5V>VI> -30V, 1.0mA::s;lo::s;40mA
-14.25
-15.75
VI= -23V, 1.0mA::s;lo::s;70mA
-14.25
-15.75
Tj = +25°C
6.5
Tj = + 125°C
6.0
-20V~Vi~
-30V
1.5
1.0mA::s;lo::s;40mA
0.1
VN
Ta=25°C,10Hz::s;f::s;100KHz
Ripple Rejection
RR
f=120Hz,
Tj =25°C
Dropout Voltage
Vo
Tj =25°C
-18.5V~VI~
-28.5V
34
mV
mV
V
mA
mA
90
/LV
39
dB
1.7
V
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8SAMSUNG
Electronics
144
IMC79LXXAC
LINEAR INTEGRATED CIRCUIT
MC79L18AC ELECTRICAL CHARACTERISTICS
(Vi = -27V, 10 = 40mA, Ci =0.33JlF, Co=0.1JlF, 0°C~Tj~+125°C, unless otherwise specified)
Characteristic
Output Voltage
Symbol
Vo
Test Conditions
Tj =25°C
Line Regulation
6Vo
Tj =25°C
Load Regulation
6Vo
Tj =25°C
Output Voltage
Vo
Quiescent Current
Id
I With Line
I With Load
Quiescent
Current Change
Output Noise Voltage
Id
-20.7V~Vi~
Min
Typ
Max
Unit
-17.3
-18.0
-18.7
V
-33V
325
-21V~Vi~
- 33V
275
1.0mA~lo~
100mA
170
1.0mA ~ 10~40mA
-20.7V>Vi> -33V,
1.0mA~lo~40mA
1.0mA~lo~70mA
Vi= -27V,
85
-17.1
-18.9
-17.1
-18.9
Tj = +25°C
6.5
Tj = + 125°C
6.0
-21V~Vi~
-33V
1.5
1.0mA~lo~40mA
0.1
10Hz~f~100KHz
VN
Ta=25°C,
Ripple Rejection
RR
f = 120Hz, Tj =25°C
Dropout Voltage
Vo
Tj =25°C
23V~ Vi~
- 33V
33
mV
mV
V
mA
mA
150
JlV
48
dB
1.7
V
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
MC79L24AC ELECTRICAL CHARACTERISTICS
(VI = -33V, 10=40mA, CI =0.33JlF, Co=0.1JlF,
Characteristic
Output Voltage
0°C~Tj~+125°C,
Symbol
Vo
Test Conditions
Tj =25°C
Line Regulation
6Vo
Tj =25°C
Load Regulation
6Vo
Tj =25°C
Output Voltage
Vo
Quiescent Cu rrent
Id
Quiescent
Current Change
I With Line
I With Load
Output Noise Voltage
Id
unless otherwise specified)
Min
Typ
Max
Unit
-23
-24
-25
V
-27V~VI~
-38V
350
-28V~VI~
-38V
300
1.0mAslos100mA
200
1.0mA S los40mA
100
-27V>VI> -38V, 1.0mAslos40mA
-22.8
-25.2
VI = - 33V, 1.0mAslos70mA
-22.8
-25.2
Tj = +25°C
6.5
Tj = + 125°C
6.0
-28V~VI~
-38V
1.5
1.0mA S loS 40mA
0.1
VN
Ta= 25°C, 10Hzsfs 100KHz
Ripple Rejection
RR
f=120Hz,
Tj =25°C
Dropout Voltage
Vo
Tj =25°C
-29V~Vi~
-35V
31
mV
mV
V
rnA
rnA
200
JlV
47
dB
1.7
V
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8~SUNG
145
•
MC79LXXAC
LINEAR INTEGRATED CIRCUIT
TYPICAL APPLICATION
Design Considerations
The MC79LXXAC Series of fixed voltage regulators
are designed with Thermal Overload Protection that
shuts down the circuit when subjected to an excessive
power overload condition. Internal Short-Circuit
Protection that limits the maximum current the circuit
will pass.
In many low current applications, compensation
capacitors are not required. However, it is
recommended that the regulator input be bypassed
with a capacitor if the regulator is connected to the
power supply filter with long wire lengths, or if the
output load capacitance is large. An input bypass
capacitor should be selected to provide good highfrequency characteristics to insure stable operation
under all load conditions. A O.33p,F or larger tantalum,
mylar, or other capacitor having low internal
impedance at high frequencies should be chosen. The
bypass capacitor should be mounted with the shortest
possible leads directly across the regulator's input
terminals. Normally good construction techniques
should be used to minimize ground loops and lead
resistance drops since the regulator has no external
sense lead. Bypassing the output is also
recommended.
Fig. 1 POSITIVE AND NEGATIVE
REGULATOR FIG.
Fig. 2 TYPICAL APPLICATION
J-------.---o+ va
- VI ( J - - - _ - - - - I
~----___o-
INPUTtt-----_---O--I
va
A common ground is required between the input
and the output voltages. The input voltage must
remain typically 2.0V above the output voltage even
during the low point on the input ripple voltage.
CIN is required if regulator is located an
appreciable distance from power supply filter.
Co improves stability and transient response.
c8SAMSUNG
Electronics
146
MC79MXXC/I
LINEAR INTEGRATED CIRCUIT
3-TERMINAL O.SA NEGATIVE
VOLTAGE REGULATOR
TO·220
The MC79MXX series of 3-Terminal medium current negative voltage
regulators are monolithic integrated circuits designed as fixed voltage
regulators. These regulators employ internal current limiting, thermal
shutdown and safe-area compensation making them essentially indestructible. If adequate heat sinking is provided, they can deliver up to
500mA output current. They are intended as fixed voltage regulators in
a wide range of applications including local (on-card) regulation for elimination of noise and distribution problems associated with single point
regulation. In addition to use as fixed voltage regulators, these devices
can be used with external components to obtain adjustable output
voltages and currents.
•
FEATURES
•
•
•
•
•
•
•
No external components required
Output current in excess of O.SA
Internal thermal-overload protection
Internal short circuit current limiting
Output transistor safe-area compensation
Available in JEDEC TO·220
Output voltages of -5V, -6V, -8V, -12V,
-15V, -18V, - 24V
1: GND 2: Input 3: Output
ORDERING INFORMATION
Device
MC79MXXCT
* * MC79MXXIT
Package
Operating Temperature
TO-220
0-125°C
TO-220
- 40 -125°C
SCHEMATHIC DIAGRAM
,---~--~--~--~--~--~~--~-4~--~--~----~--~----------~------~-oGND
,---+-------~~OUT
Q1
L-__~__~----~------~--------------~~~--------------+__4--------------~~IN
c8SAMSUNG
Electronics
147
MC79MXXC/I
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Input Voltage (for Vo = - 5 to -1.8V)
(for Vo = 24V)
VIN
-35
-40
V
V
Thermal Resistance Junction-Case
Junction-Air
8 JC
8 JA
5
65
°CIW
°CIW
Operating Temperature Range MC79MXXC
MC79MXXI
Topr
0- + 125
-40- + 125
°C
°C
Storage Temperature Range
Tstg
-65- +150
°C
ELECTRICAL CHARACTERISTICS MC79M05C
(Refer to test circuit, Tmin::5 Tj ::5125°C, 10 =350mA, VI = -1 OV, unless otherwise specified)
Characteristic
Output Voltage
Symbol
Test Conditions
Min
Typ
Max
Tj =25°C
-'-4.8
-5.0
-5.2
Vo
5.0mA:s 10:S 350mA
Vi = - 7V to - 25V
-4.75
-5.0
-5.25
Vi = - 7V to - 25V
7.0
50
Vi= -8V to -18V
2.0
30
10 = 5.0mA to 500mA
30
100
mV
Tj =25°C
3
6
mA
Line Regulation
LVo
Tj =25°C
Load Regulation
LVo
Tj =25°C
Quiescent Current
Quiescent Current Change
Id
Lid
Unit
V
10 = 5.0mA to 350mA
0.4
Vi= -8V to -25V
0.4
mV
mA
LVofLT
10=5mA
0.2
mV/oC
Output Noise Voltage
VN
f = 10Hz to 100KHz Tj = 25°C
40
p.V
Ripple Rejection
RR
f=120Hz, Vi= -8 to -18V
60
dB
Dropout Voltage
Vo
10 = 500mA, Tj = 25°C
1.1
V
Short Circuit Current
Isc
Vi = - 35V, Tj = 25°C
140
mA
Peak Current
Ipeak
Tj = 25°C
650
mA
Output Voltage Drift
54
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8~SUNG
148
LINEAR INTEGRATED CIRCUIT
MC79MXXC/I
ELECTRICAL CHARACTERISTICS MC79M06C
(Refer to test circuit, Tmin::5Tr:5125°C, 10 = 350mA, VI = -11V, unless otherwise specified)
Characteristic
Output Voltage
Symbol
Test Conditions
Min
Typ
Max
Tj =25°C
-5.75
-6.0
-6.25
Vo
5.0mA ~ lo~ 350mA
VI = -8.0V to -25V
-5.7
-6.0
-6.3
VI= -8V to -25V
7.0
60
VI = - 9V to - 19V
2.0
40
10 = 5.0mA to 500mA
30
120
mV
Tj =25°C
3
6
rnA
Line Regulation
L.Vo
Tj =25°C
Load Regulation
L.Vo
Tj =25°C
Quiescent Current
Quiescent Current Change
Id
L.ld
Unit
V
10 = 5.0mA to 350mA
0.4
Vi= -8.0V to -25V
0.4
mV
rnA
L.VoIL.T
10=5mA
0.4
mV/oC
Output Noise Voltage
VN
f = 10Hz to 100KHz Tj = 25°C
50
p.V
Ripple Rejection
RR
f=120Hz, Vi= -9 to-19V
60
dB
Dropout Voltage
Vo
10=500mA, Tj =25°C
1.1
V
Short Circuit Current
Isc
Vi= "",,35V, Tj =25°C
140
rnA
Peak Current
Ipeak
Tj =25°C
650
rnA
Output Voltage Drift
54
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
ELECTRICAL CHARACTERISTICS MC79M08C
(Refer to test circuit, T min::5 Tj ::5125°C, 10 = 350mA, VI = -14V, unless otherwise specified)
Characteristic
Output Voltage
Test Conditions
Min
Typ
Max
Tj =25°C
-7.7
-8.0
-8.3
5.0mA:s 10 ~ 350mA
Vi = -10.5V to - 25V
-7.6
-8.0
-8.4
Symbol
Vo
Line Regulation
L.Vo
Tj =25°C
Load Regulation
L.Vo
Tj = 25°C
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Id
L.ld
!::,. VoiL. T
Unit
V
Vi = -10.5V to - 25V
7.0
80
Vi= -11V to -21V
2.0
50
10 = 5.0mA to 500mA
30
160
mV
Tj =25°C
3
6
rnA
10 = 5.0mA to 350mA
0.4
Vi = -10.5V to - 25V
0.4
-0.6
10=5mA
Output Noise Voltage
VN
f = 10Hz to 100KHz Tj = 25°C
Ripple Rejection
RR
f=120Hz, Vi= -11.5V to -21.5V
54
mV
rnA
mV/oC
60
p.V
59
dB
Dropout Voltage
Vo
10 = 500mA, Tj = 25°C
1.1
V
Short Circuit Current
Isc
Vi = - 35V, Tj = 25°C
140
rnA
Peak Current
Ipeak
Tj =25°C
650
rnA
* Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8SAMSUNG
Electronics
149
•
MC79MXXC/I
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS MC79M12C
(Refer to test circuit, T min:::; Tj :::; 125°C, 10 =350mA, VI = -19V, unless otherwise specified)
Characteristic
Output Voltage
Line Regulation
Load Regulation
Symbol
Test Conditions
Min
Typ
Max
Tj =25°C
-11.5
-12
-12.5
Vo
5:0mA::s; 10::s;35OmA
VI = -14.5V to - 30V
-11.4
-1.2
-12.6
VI = - 14.5V to - 30V
8.0
80
VI = - 15V to - 25V
3.0
50
10 = 5.0mA to 500mA
30
240
mV
Tj =25°C
3
6
mA
/::,V o
T j =25°C
/::,V o
Tj =25°C
Id
Quiescent Current
Quiescent Current Change
/::, Id
Unit
V
10 = 5.0mA to 350mA
0.4
VI = -14.5V to - 30V
0.4
mV
mA
/::,Vo//::,T
10=5mA
-0.8
mV/oC
Output Noise Voltage
VN
f = 10Hz to 100KHz Tj = 25°C
75
",V
Ripple Rejection
RR
f = 120Hz, VI = -15V to - 25V
60
dB
Dropout Voltage
Vo
10 = 500mA, Tj = 25°C
1.1
V
Short Circuit Current
Isc
VI = - 35V, T j = 25°C
140
mA
Peak Current
Ipeak
T j =25°C
650
mA
Output Voltage Drift
54
• Load and line regulation are specified at constant junction temperature. Change in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
ELECTRICAL CHARACTERISTICS MC79M15C
(Refer to test circuit, Tmin:::; Tj :::;125°C, 10 =350mA, VI = - 23V, unless otherwise specified)
Characteristic
Output Voltage
Line Regulation
Load Regulation
Quiescent Current
Quiescent Current Change
Symbol
Vo
Test Conditions
Min
Typ
Max
Tj =25°C
-14.4
-15
-15.6
5.0mA::s; 10 ::s;350mA
Vi = - 17.5V to - 30V
-14.25
-15
-15.75
Vi = -17.5V to - 30V
9.0
80
Vi= -18V to -28V
5.0
50
10 = 5.0mA to 500mA
30
240
mV
3
6
mA
/::,V o
T j =25°C
/::,V o
T j =25°C
Id
/::'Id
Unit
V
Tj =25°C
10 = 5.0mA to 350mA
0.4
Vi = -17.5V to - 28V
0.4
mV
mA
mV/oC
/::,Vo//::,T
10=5mA
-1.0
Output Noise Voltage
VN
f = 10Hz to 100KHz T j = 25°C
90
",V
Ripple Rejection
RR
f = 120Hz, Vi = -18.5V to - 28.5V
59
dB
Output Voltage Drift
54
Dropout Voltage
Vo
10 = 500mA, T j = 25°C
1.1
V
Short Circuit Current
Isc
VI = - 35V, T j = 25°C
140
mA
Peak Current
Ipeak
Tj =25°C
650
mA
• Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8SAMSUNG
Electronics
150
MC79MXXC/I
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS MC79M18C
(Refer to test circuit, Tmin:sTrs:125°C, 10 = 350mA, V, = -27V, unless otherwise specified)
Characteristic
Output Voltage
Line Regulation
Load Regulation
Quiescent Current
Quiescent Current Change
Output Voltage Drift
Symbol
Test Conditions
Min
Typ
Max
Tj =25°C
-17.3
-18
-18.7
Vo
5.0mA ~ 10~350mA
V, =-21Vto -33V
-17.1
-18
-18.9
I:::,.Vo
Tj =25°C
I:::,.Vo
Tj =25°C
Id
I:::,.ld
V
V,= -21V to -33V
9.0
80
Vi= -24V to -30V
5.0
60
10 = 5.0mA to SOOmA
30
360
mV
Tj =25°C
3
6
rnA
10 = 5.0mA to 350mA
0.4
VI = -21V to -33V
0.4
I:::,. Vol I:::,. T
Unit
Output Noise Voltage
VN
f = 10Hz to 100KHz Tj = 25°C
Ripple Rejection
RR
f = 120Hz, Vi = - 22V to - 32V
54
rnA
mV/oC
-1.0
10=5mA
mV
110
p.V
59
dB
Dropout Voltage
Vo
10 = 500mA, Tj = 25°C
1.1
V
Short Circuit Current
Isc
Vi= -35V, Tj=25°C
140
rnA
Peak Current
Ipeak
Tj =25°C
650
rnA
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
ELECTRICAL CHARACTERISTICS MC79M24C
(Refer to test circuit, Tmin:STj:S 125°C, 10= 350mA, V, = - 33V, unless otherwise specified)
Characteristic
Output Voltage
Symbol
Test Conditions
Min
Typ
Max
Tj =25°C
-23
-24
-25
Vo
5.0mA~ 10~350mA
-22.8
-24
-25.2
VI= -27V to -38V
9.0
80
Vi= -30V to -36V
5.0
70
10 = 5.0mA to 500mA
30
300
mV
Tj =25°C
3
6
rnA
VI= -27V to -38V
Line Regulation
I:::,.Vo
Tj =25°C
Load Regulation
I:::,.Vo
Tj =25°C
Quiescent Current
Quiescent Current Change
Id
I:::,.ld
Unit
V
10 = 5.0mA to 350mA
0.4
Vi= -27V to -38V
0.4
mV
rnA
mV/oC
I:::,.VJI:::,.T
10=5mA
-1.0
Output Noise Voltage
VN
f = 10Hz to 100KHz Tj = 25°C
180
p.V
Ripple Rejection
RR
f = 120Hz, VI = - 28V to - 38V
58
dB
Dropout Voltage
Vo
10=500mA, Tj =25°C
1.1
V
Isc
VI= -35V, Tj =25°C
140
rnA
I peak
Tj =25°C
650
rnA
Output Voltage Drift
Short Circuit Current
Peak Current
54
* Load and line regulation are specified at constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
c8SAMSUNG
Electronics
151
•
LINEAR INTEGRATED CIRCUIT
MC79MXXC/I
TYPICAL APPLICATION
Bypass capacitors are recommended for stable operation of the
MC79MXX series of regulators over the input voltage and output current ranges. Output bypass capacitors will improve the transient
response of the regulator.
The bypass capacitors, (21'F on the input, 11'F on the output) should
be ceramic or solid tantalum which have good high frequency
characteristics. If aluminum electrolytics are used, their values should
be 1O!!F or larger. The bypass capacitors should be mounted with
the shortest shortest leads, and if possible, directly across the
regulator terminals.
Fig. 1 Fixed Output Regulator
J-----1.....--- VOUT
VIN--_---I
1.0!,F
2.0!,F
Fig. 2 Variable Output
I----_--+--DVOUT
L..-_.....,.__....
~
-
-
TANTALUM
~
SOLID
2.2!,F
SOLIDL
TANTALUM
+r25mF
R2--*"---'-_--,
___
-*-C_2_ _ _ _
J.
Note
1. Required for stability. For value given, capacitor must
be solid tantalum. 25JLF aluminum electrolytic may
be sUbstituted.
2. C2 improves transient response and ripple rejection.
Do not increase beyond 50JLF.
vOUT = VSET (-R-,
R, + R2
-)
Select R2 as follows
MC79M05: 3000, MC79M12: 7500, MC79M15: 110
c8SAMSUNG
Electronics
152
LINEAR INTEGRATED CIRCUIT
KA350
TO·3P
3A ADJUSTABLE POSITIVE VOLTAGE
REGULATOR
The KA350 is an adjustable 3-terminal positive voltage regulator capable of supplying in excess of 3.0 A over an output voltage range of 1.2
V to 33 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it
employs internal current limiting, thermal shutdown and safe area compensation, making them essentially blow-out proof. All overload protection circuitry remains fully functional even if the adjustment terminal
is accidentially disconnected.
•
FEATURES
•
•
•
•
•
•
•
•
•
•
Output adjustable between 1_2V and 33V
Guaranteed 3A output current
Internal thermal overload protection
Load regulation typically 0.1 %
Line regulation typically 0.005%N
Internal short-circuit current limiting constant
with temperature.
Output transistor safe-area compensation
Floating operation for high voltage application
Standard 3-lead transistor package
Eliminates stocking many fixed voltages
1: Adj 2: Output 3: Input
Device
Package
KA350H
TO-3P
KA350T
TO-220
Operating Temperature
o-125°C
BLOCK DIAGRAM
VOLTAGE
REFERENCE
PROTECTION
CIRCUITRY
ADJUSTABLE
c8SAMSUNG
Electronics
OUTPUT
153
KA350
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
I nput-Output Voltage Differential
Lead Temperature
(Soldering, 10 sec)
Symbol
Value
Unit
VIN - VOUT
35
Voc
Tlead
300
°C
Po
Internally limited
Power Dissipation
Operating Junction Temperature Range
Topr
o-
+ 125
°C
Storage Temperature Range
T5t9
- 65 -
4-150
°C
ELECTRICAL CHARACTERISTICS
(VIN-VOUT=5V, IOUT=1.5A, Tj=O°C to 125°C; Pmax , unless otherwise specified)
Characteristic
Symbol
Test Conditions
Line Regulation
6V o
Ta=25°C,3Vs.VI·Vos.35V
(Note 1)
Load Regulation
6Vo
Ta= 25°C, 10mAs.los.3A
Vos.5V (Note 1)
Vo~5V (Note 1)
Adjustment Pin Current
ladj
Adjustment Pin Current Change
61 adj
3V s.V I - Vos.35V,
10mAs.ks.3A, POS.P MAX
Thermal Regulation
REG therm
Reference Voltage
V REF
3V 5,V I - Vo5,35V, 10mA5,lo5,3A, P5,30W
Line Regulation
6V o
3.0V s.V I - Vos.35V
6V o
10mAs.los.3.0A
Vos.5.0V
Load Regulation
Min
Pulse = 20mS, Ta=25°C
Maximum Output Current
Ts
IMAX
0.03
%IV
5
0.1
25
0.5
mV
%
50
100
p.A
0.2
5.0
p.A
%/W
1.25
1.30
V
0.02
0.07
%IV
20
0.3
70
1.5
mV
%
1.0
%
VI-Vos.10V, POS.PMAX
A
VI - Vo = 30V, Pos. PMAX , Ta = 25°C
0.25
1.0
A
RMS Noise, % of VOUT
VN
10Hzs.fs.10KHz, Ta=25°C
RR
Vo = 10V, f = 120Hz,
Cadj =0
Cadj = 10p.F
S
0.005
4.5
IMIN
Long-Term Stability
Unit
3.0
Tj = O°C to 125°C
Minimum Load Current
Ripple Rejection
Max
0.002
1.2
Vo~5.0V
Temperature Stability
Typ
3.5
VI -V o=35V
Tj = 125°C
66
10
mA
0.003
%
65
80
dB
dB
0.3
1
%/1000HR
Note 1: Regulation is measured at constant junction temperature. Changes in output voltage due to heating effects
must be taken into account separately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
154
KA350
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 2 CURRENT LIMIT
Fig. 1 LOAD REGULATION
T, =25'C
LlVour=lOOmV
0.4
~
0.2
w
CI
r
z
'o"
:t:
-
w
CI
~-0.2
g
r-.--- ~A
~
IL=3.0A
~-0.4
-
\ I\.
r::::::
'\,
T
~-0.6
>
:::)
~
0
.!.
~
1.5
:!!:
40
35
-:!I
>
o
25
50
75
100
25
125
TJ, JUNCTION TEMPERATURE (OC)
75
50
Fig. 5 TEMPERATURE STABILITY
T, =25'C
~1,250
r--- ~
~
g
ct
-.........
3.5
1:5
II:
g;
/
2.5
~
0
ffl
:;
W
II:
0
.§
Jl,23O
.5
75
100
c8SAMSUNG
Electronics
125
c---r
j
I
1.5
o
/
...V
w
50,
I
...
...0z
~1,240
TJ , JUNCTION TEMPERATURE (OC)
i
!
.§.
1:5
25
125
Fig. 6 MINIMUM LOAD CURRENT
4.5
1,260
w
100
TJ, JUNCTION TEMPERATURE (OC)
~
t--00
{
I
o
35
20
10
30
15
25
V,- VA, INPUT -OUTPUT VOLTAGE DIFFERENTIAL (V"')
155
KA350
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 7 RIPPLE REJECTION vs
100
..
80
.....
iii
~
140
J
I
CAOr 10"F
120
,
........
~
or:
0
Fig. 8 RIPPLE REJECTION vs louT
VOUT
60
iii 100
~
i"-- I--. C~,=O
or:
0
;:::
~
a:
L&J
60
L&J
..J
N
"-
"-
a:
C""=O
!f
0::0::
40
V,=15V
Vo= 10V
20 f-V,-Vo=5V
ic=500mA
f-f= 120Hz
TJ =f5'C
20
r f=120Hz
TITL
10
15
20
25
30
35
0.1
0,01
Yo, OUTPUT VOLTAGE IV)
60
iii
~
or:
~
0
80
~
a:
w
..J
"a..
Fig. 10 OUTPUT IMPEDANCE
10'
IL~500mA
/
i'-V/
~
~
V
~ \
r Vo 10V
r IL=500mA
z0:(
CadJ=
i
~
20
/
1..
~
1q",F
'C",,=O
10-'
o
,$
"'-.\
0::
10'
w
o
_\ \
a:
Ii
1,/
V
TJ =25'C
S
1\
c",,=o
40
~V,_15V
V,=15V Vo= 10V
TJ =25'C _
... ............
10
10 , OUTPUT CURRENT (A)
Fig. 9 RIPPLE REJECTION vs FREQUENCY
100
0
~
.............
Ul
0::
40
CAOJ =10"F
~
80
0
Ul
0::
j
It c""
V
V-- r---... k/
10- 2
JL
= lO"F
10- 3
10
100
1K
t,
10K
100K
1M
10
10M
Fig. 11 LINE TRANSIENT RESPONSE
"~
1.5
~~
1.0
~z
g~
0.5
6>
>w
'1Q
"~
ic=50mA
2
!5~
CL= 1"F: CAOJ = 10"F
I
-1.5
1.0
ffi
1.0
~
0.5
9
~~
:;
'10
20
c8SAMSUNG
Electronics
30
40
-3
;j
0
Q
>:1:
TIME(,..s)
-1
1.5
0:(
t,
,
~~
g
v,
10
c L=11 "F: .IAOJ = 10"F
o~
I-
0
"-"
~or:
!5Q
-2
~L=O: C",,=o
~
~"""'
>
a..z
:j
-1.0
~~
;jL&J
1M
"
0
'1Q
L&J
"~
100K
Fig. 12 LOAD TRANSIENT RESPONSE
J.Vo=10V
1. _
'r r-
In
~\
-0.5
0:(
1K
10K
f, FREQUENCY (Hz)
w
w
0
100
FREQUENCY (Hz)
0.5
• I
IlcL=o! Cad,lo
V
1
J~'=15V
Ilk
II
Vo =10V -
Ir~i~'-
1\
\
~
10
20
t,
30
40
TIME(,.s)
156
KA350
LINEAR INTEGRATED CIRCUIT
APPLICATION INFORMATION
STANDARD APPLICATION
0
IN
KA350
1'1
ADJ
I,ru
1~'~"F
I
•
-0 VOUT
OUT
R,
~120
;.rR
I~;F
2
m
Fig. 13
Gin: Gin is required if the regulator is located an appreciable distance from power supply filter.
Go: Output capacitors in the range of 1 p.F to 100 p.F of aluminum or tantalum electronic are commonly used to
provide improved output impedance and rejection of transients.
In operation, the KA350 develops a nominal 1.25 V reference voltage, V reh between the output and adjustment
terminal. The reference voltage is impressed across program resistor R, and, since the voltage is constant, a
constant current I, then flows through the output set resistor R2 , giving an output voltage of
R2
Vout = 1.25V (1 +~) + IADJ R2
Since IADJ current (less than 100p.A) from the adjustment terminal represents an error term, the KA350 was
designed to minimize IADJ and make it very constant with line and load changes. To do this, all quiescent operating
current is returned to the output establishing a minimum load current requirement. If there is insufficient load on
the output, the output voltage will rise.
Since the KA350 is a floating regulator, it is only the voltage differential across the circuit which is important
to performance, and operation at high voltage with respect to ground is possible.
qsSAMSUNG
Electronics
157
LINEAR INTEGRATED CIRCUIT
KA350
TYPICAL APPLICATIONS
Fig. 14 LIGHT CONTROLLER
OUT 1---~~-~-oVOUT
KA350
IN
Fig. 15 PRECISION POWER REGULATOR WITH
LOW TEMPERATURE COEFFICIENT
ADJ
KA350
IN
OUTt--.-------.--o Voun~4V
ADJ
IN457
R1
375
'A-~--<10K
IN457
R2
* Adjust for 3.75V across R1 L-._~----+-.<~2Kfih
OUTPUT
ADJUST
Fig. 17 SLOW TURN·ON 15V REGULATOR
Fig. 16 ADJUSTABLE REGULATOR WITH
IMPROVED RIPPLE REJECTION
IN
KA350
C2
l
OUT I!I------.-----.-----.."-O VOUT
ADJ
L-_ _...,.-_ _..I R1
F
0.1/L
___
KA350
OUT 1----.--------....-0 ~~~T
C2 _____A-rD_J_ _...
01"
~_ _ _2_40............_--'1M4802
r--
1N4002
+
C3
1/LFt
R2
5K
+
C1
100/LF
t Solid tantalum
* Discharges C1 if output is shorted to ground
Fig. 18 0 TO 30V REGULATOR
i'~~o------fIN
KA350
Fig. 19 5V LOGIC REGULATOR WITH
ELECTRONIC SHUTDOWN*
OUTt-------<> VOUT
VIN Q----.----fIN
7V -36V
ADJ
KA350
OUTt--......---.--{}
~~UT
ADJ
R1
240
R2
720
LM113
1.2V
1---+-"""'.,....-0 TTL
1K
R3
680
-10V
c8SAMSUNG
Electronics
* Min output
= 1.2V
158
KA350
LINEAR INTERGRATED CIRCUIT
TYPICAL APPLICATIONS
(Continued)
Fig. 21 1.2V - 20V REGULATOR WITH MINIMUM
PROGRAM CURRENT
Fig. 20 PRECISION CURRENT LIMITER
IN
R1*
* 0.4~R1 ~ 1200
KA350
•
OUTJ-----1'---oVOUT
* Minimum load current = 4mA
Fig. 22 5A CONSTANT VOLTAGE/CONSTANT CURRENT REGULATOR
R1
33
35V Q--t------I\,.".,.--fIN
KA350
OUT 1-------~================1~=-=--+_=~____1~ OUTPUT
1.2V - 30
ADJ
C3
R4
630
+
+
C6
1O"F
t Solid tantalum
* Lights in constant current mode
-6V TO -15V
Fig. 23 12V BATTERY CHARGER
500
R6
0.2
IN
KA350
OUTI----1>----_-____1>------------<~-~tNY--_.___u+ VOUT
ADJ
LED
TO 12V
BATIERY
R1
3K
c8SAMSUNG
Electronics
159
KA350
LINEAR INTEGRATED CIRCUIT
R2
720
Fig. 24 TRACKING PREREGULATOR
Fig. 25 3A CURRENT REGULATOR
R1
240
KA350
OUT
ADJ
VIN
IN
KA350
OUT
IN
KA350
OUT
ADJ
+ C2
11'F
R4
1K
OUTPUT
ADJUST
Fig. 26 ADJUSTING MULTIPLE ON·CARD REGULATORS WITH SINGLE CONTROL·
IN
VOUTt
VOUT
KA350
IN
OUT
KA350
VIN
IN
OUT
KA350
1N4002
1N4002
VOUTt
1N4002
+-_______---' ____________
L-.._ _ _ _
R2
1K
OUT
ADJ
ADJ
ADJ
-+-_ _ _---'
t Minimum load -10mA
* All outputs within
± 100mV
Fig. 28 SIMPLE 12V BATTERY CHARGER
Fig. 27 AC VOLTAGE REGULATOR
RS'
KA350
0---- IN
0_2
-
OUT
VIN
'"
IN
ADJ
KA350
OUT
ADJ
120
R1
120
+
I
12 V p _p
1\
6 V p-o
,
{ \
~V
1OOOI'F"
3A
,
480
I
R2
2.4K
LJ
1
~
J480
I
120 .~
Q--IN
KA350
ZOUT = Rs (1
Use of Rs allows low charging rates with fully
charged battery_
• * 1000j-tF is recommended to filter
out any input transients_
* Rs - sets output impedance of charger
ADJ
OUT
c8SAMSUNG
Electronics
-
'"
+~)
1
160
LM317
LINEAR INTEGRATED CIRCUIT
3·TERMINAL POSITIVE ADJUSTABLE
REGULATOR
TO·220
The LM317 is a 3-terminal adjustable positive voltage regulator capable
of supplying in excess of 1.5A over an output voltage range 0f 1.2V to
37V. This voltage regulator is exceptionally easy to use and requires
only two external resistors to set the output voltage. Further, it employs
internal current-limiting, thermal-shutdown and safe area compensation,
making it essentially blow-out proof. The LM317 serves a wide
variety of applications including local, on-card regulation. This device
also makes an especially simple adjustable switching regulator, and a
programmable output regulator, or by connecting a fixed resistor between the adjustment and output, the LM317 can be used as a precision current regulator.
•
FEATURE
•
•
•
•
Output current in excess of 1.SA
Output adjustable between 1_2V and 37V
Internal thermal-overload protection
Internal short-circuit current-limiting constant with
temperature
• Output transistor safe-area compensation
• Floating operation for high-voltage applications
• Standard 3-pin transistor packages
1: Adj 2: Output 3: Input
ORDERING INFORMAliON
Operating Temperature
SCHEMATIC DIAGRAM
3
r---~----~----+---~r---~--~------------------------~------~--r-OVIN
R11
R25
R26
L-~--~~--~--~~--~~~~~~--~--~~--~---4----------------~~-¢\OUT
1 ADJUST
c8SAMSUNG
Electronics
161
LINEAR INTEGRATED CIRCUIT
LM317
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Input-Output Voltage Differential
Value
Unit
VIN - VOUT
40
Voc
Lead Temperature
T lead
230
°C
Power Dissipation
Po
Internally limited
Operating Temperature Range
Topr
o-
Storage Temperature Range
T stg
-65 -
-
--
°C
+ 125
°C
+150
ELECTRICAL CHARACTERISTICS
(VtN-VOUT=5V, IOUT=0.5A,
0°C~Tj~125°C,
Characteristic
Line Regulation
Imax =1.5A, Pmax = 20W, unless otherwise specified)
Symbol
6Vo
Typ
Max
Unit
Ta:::25°C ~V~VIN -' VouT~40V
0.01
0.04
%IV
~V ~VIN - VouT~40V
0.02
0.07
%IV
5
0.1
25
0.5
mV
%Vo
20
0.3
70
1.5
mV
%Vo
50
100
p.A
0.2
5
p.A
1.25
1.30
V
Test Conditions
Min
Ta = 25°C, 10mA~ loLiT~ IMAx
V0UT~5V
Load Regulation
6Vo
VouT~5V
1OmA ~ louT ~ IMAX
VOUT~5V
VouT~5V
Adjustable Pin Current
ladj
2.5V ~VIN - VouT~40V
Adjustable Pin Current Change
61 adj
10mA~louT~IMAx
P~PMAX
3V ~VIN - V ouT ::5:40V
Reference Voltage
V REF
10mA~louT~IMAx
1.2'0
PO~PMAX
Temperature Stability
0.7
Ts
Minimum Load Current to
Maintain Regulation
IMIN
V IN - VOUT = 40V
Maximum Output Current
IMAx
VIN - VOUT~ 15V, Po~ PMAX
VIN - VOI)T = 40V, Po~ PMAX
RMS Noise, % of VOUT
Ripple Rejection
Long-Term Stability, Tj = Thigh
Thermal Resistance Junction to Case
eN
Ta = 25°C, 10Hz~f~ 10KHz
RR
V ouT =10V, f=120Hz
without C AOJ
C~DJ = 10p.F
S
Ta = 25°C for end point
measurements, 1000HR
RbJC
3.5
1.5
0.15
66
%Vo
10
mA
2.2
0.4
A
0.003
%Vo
65
80
dB
0.3-
5
1
%
°C/W
* 'Load and line regulation are specified at constant junction temperature. Change in Vo due to heating eflect~
must be taken into account separately. Pulse testing with low duty is used.
c8SAMSUNG
Electronics
162
LM317
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 2 ADJUSTMENT CURRENT
Fig. 1 LOAD REGULATION
0.2
60
r----
e
~
a
-0.2
55
0.5A
--.::r--Il
'--
i
~
1'=1.~
ffi
V
~
~ -0.4
i5
..
50
a:
0
~
z
45
Iii
::>
~
ac
V'N= 15V
Voor =10V
o
-0.8
-
~ r--
--
•
V
w
::E
-0.6
~
40
35
-1.0
o
50
75
TEMPERATURE (OC)
25
100
30
-50
125
-25
25
50
75
100
125
150
TEMPERATURE (OC)
Fig. 3 DROPOUT VC;>LTAGE
Fig. 4 TEMPERATURE STABILITY
1,260
1,250
~
---
I"""
w
~
: 1,240
o
ffi
a:
~
a:
~
'" '"
r-....
1,230
1~
____L -____L -____
~
o
25
50
____
75
~
__
~
125
100
TEMPERATURE (OC)
Fig. 5 RIPPLE REJECTION
1,220 L-____L-____L-____L-_ _~_---..l
o
25
50
75
TEMPERATURE (OC)
100
125
Fig. 6 RIPPLE REJECTION
loor---r----,----,---,-----,
100
I
I - - - - - + - - - + - - - + - - V ' N = 15V
VouT =10V
T, =25"C
I
""'"
80
Il=500mA
I
C"",=10pF
~",:
I
~ ~O
~
o
V.. -Voor=5V
IL=5OOmA
f=l2OHz
T,=25"C
I
o
20~--+---+----+---~-~~
I
10
15
20
25
OUTPUT VOLTAGE (VI
c8SAMSUNG
Electronics
30
35
°l'~O----~l~oo~--l~K~---l~O~K-~l=oo=K~--~lM
FREQUENCY (Hz)
163
LM317
LINEAR INTEGRATED CIRCUIT
Fig. 8 OUTPUT IMPEDANCE
Fig. 7 RIPPLE REJECTION
10'
100
i==--V'N
~
80
~VOUT
V""
I/'"
/
T,=25'C
~~
~
15V
10V
r-- IL = 500mA
~
sw
'CADJ-10~F
1()O
o
z
/
~
I II
~ CAOJ=O
/
CADJ=O/
~ 10-'
....
~
11.
....
~
I
20
o
r--
/
--
o
10-'
V,N=15V
VOUT = 10V
f=120Hz
T, =25'C
./
...........
I I III
10-'
10
0.1
1
OUTPUT CURRENT (A)
0.01
10
/
/cADJ
1O~F
.",t
100K
1K
10K
FREQUENCY (Hz)
100
1M
Fig. 10 LOAD TRANSIENT RESPONSE
Fig. 9 LINE TRANSIENT RESPONSE
1.5
w
CJ
~€
1.0
1
Oz
~ ~ 0.5
8~
CIL :(J; LJ = 0
IA
>0
l\
-
0
CL-1~F;
CL=O; CADJ =0
I"
-0.5
-1.0
w
r----
~ ....l
-1
{
VouT =10V
IL=50mA
T,=25'C
-2
-3
-1.5
1.5
~
9€
1.0
.... z
~~
0.5
>~
1.0
0.5
10
r1
CADJ -10~F
20
TIME I"s)
-
30
40
CL=
1~F;
CADJ =
1\
~•.,\
1O~F
I
V'N,,15V
VouT =10V _
INL ,,50mA
T,=25'C
\\ I
V
I
I
\
1\
v
\
10
20
TlMEv,s)
30
40
Fig. 11 MAXIMUM OUTPUT CURRENT
Tj =25'C
6VOUT =100mV
~
r
,
1\
....
\,
i5
a:
§
....
o
~
11.
!;
o
oS
__ +- _ _
J
"\,
"
,
~
--I-
10
15
20
25
30
35
V,- Vo. INPUT-OUTPUT VOLTAGE DIFFERENTIAL (V..)
c8SAMSUNG
Electronics
,164
LM317
LINEAR INTEGRATED CIRCUIT
TYPICAL APPLICATIONS
Fig. 13 Current Limited 6V Charger
Fig. 12 AC Voltage Regulator
VIN
9V TO SOV
VIN
LM317
VOUTt--.....---~
120
SV p_p
~
* Sets peak current (O.SA for 112)
• * The 1000J-tF is recommended to filter out
input transients
Fig. 14 12V Battery Charger
* Rs-sets output impedance of charger
1 R2 Use of Rs allows low
ZOUT = Rs ( + R1) charging rates with
fully charged battery.
c8SAMSUNG
Electronics
Fig. 15 Programmable Regulator
R2
VOUT = 1.25V (1 +"R,") + ladj R2
CIN is required when regulator is located an
appreciable'distance from power supply filter.
COUT is not needed for stability. however, it does
improve transient response_
Since ladj is controlled to less than 100J-tA, the
error associated with this term is negligible in
most appl ications.
165
•
KA317L
LINEAR INTEGRATED CIRCUIT
TO·92
3-TERMINAL POSITIVE ADJUSTABLE
REGULATOR
The KA317L is a 3-terminal adjustable positive voltage
regulator capable of supplying in excess of 1OOmA over an output voltage range of 1.2V to 37V. This voltage regulator is exceptionally easy to use and requires only two external resistors
to set the output voltage. Further, it employs internal currentlimiting, thermal-shutdown and safe area compensation, making it essentially simple adjustable switching regulator, a programmable output regulator, or by connecting a fixed resistor
between the adjustment and output, the KA317L can be used as a precision current regulator.
FEATURES
•
•
•
•
•
•
Output current in excess of 100mA
Output adjustable between 1.2V and 37V
Internal thermal·overload protection
Internal short·circuit current·limiting
Output transistor safe·area compensation
Floating operation for high·voltage applications
ORDERING INFORMATION
Operating Temperature
BLOCK DIAGRAM
'\lIN o-----_-------~-----~-----___,
VOLTAGE
REFERENCE
PROTECTION
. CiRCUITRY
RUMIT
I----~--------<~---------<--_o VOUT
ADJ
c8SAMSUNG
Electronics
166
KA317L
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Input-Output Voltage Differential
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
Value
Unit
VIN - VOUT
Po
Topr
T stg
40
Internally Limited
0- + 125
-65- + 150
V
•
°C
°C
ELECTRICAL CHARACTERISTICS
(VIN-VOUT =5V, IOUT=40mA, OOCarately. Pulse testing with low duty cycle is used.
c8SAMSUNG
Electronics
167
LINEAR INTEGRATED CIRCUIT
KA317L
TYPICAL APPLICATIONS
Fig. 1 5V Electronic Shutdown Regulator
Your
~------------~------------------+---~Vo
V1
+
T
120
1.01lF
m
ADJUST u--------------<~---------'
'j.-----------AlMI---------<:: TTL
CONTROL
720
MINIMUM Vo
=1.25V
01 protects the device during an input short circuit.
Fig. 2 Slow Tum·On Regulator
Your
-e Vo
KA317L
VIN
1N4001
240
50K
ADJUST
R2
+
10!,F
c8SAMSUNG
Electronics
l68
LINEAR INTEGRATED CIRCUIT
KA317L
Fig. 3 Current Regulator
I
10
KA317L
<)
I
VOUT
,...
R1
R2
ill
U.l
I
,.,.
-
ADJUST
VREF
lOMAX
_ 1.25V
R1
=(1'11) + IADJ =
VREF
_ 1.25V
10MIN =( R1 + R2)+ IADJ= R1 + R2
5mA< IOUT< 100mA
c8SAMSUNG
Electronics
169
KA317M
LINEAR INTEGRATED CIRCUIT
---------------------------l
TO·220
3-TERMINAL POSITIVE ADJUSTABLE
REGULATOR
The KA317M is a 3-terminal adjustable positive
voltage regulator capable of supplying in excess of
500mA over an output voltage range of 1.2V to 37V. This
voltage regulator is exceptionally easy to use and requires only two external resistors to set the output
voltage. Further, it employs internal current-limiting,
thermal-shutdown and safe area compensation, making
it essentially simple adjustable switching regulator, a
programmable output regulator, or by connecting a fixed resistor between the adjustment and output, the
KA317M can be used as a precision current regulator.
1: Adj 2: Output 3: Input
FEATURES
•
•
•
•
•
•
Output current in excess of SOOmA
Output adjustable between 1.2V and 37V
Internal thermal-overload protection
Internal short·circuit current·limiting
Output transistor safe·area compensation
Floating operation for high·voltage applications
ORDERING INFORMATION
Operating Temperature
BLOCK DIAGRAM
VIN o-----....-----~--___.._-----__+_-----__,
I,
PROTECTION
CIRCUITRY
I-------<~----~>------~>-----OVOUT
ADJ
c8SAMSUNG
Electronics
170
KA317M
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Input-Output Voltage Differential
Power Dissipation
Operating Temperature
Storage Temperature
VIN - VOUT
Po
Topr
Tstg
40
Internally Limited
0- + 125
-65- + 150
V
•
°C
°C
ELECTRICAL CHARACTERISTICS
(VIN-VoUT=5V, IOUT=0.1A, 0°C ADJUST
VREF
_1.25V
lOMAX = (Fi1) + IADJ =
R1
VREF
_ 1.25V
10MIN =( R1 + R2)+ IADJ = R1 + R2
5mA< IOUT<500mA
c8SAMSUNG
Electronics
173
KA337
LINEAR INTEGRATED CIRCUIT
3-TERMINAL NEGATIVE
ADJUSTABLE REGULATOR
-1
TO·220
The KA337 is a 3-terminal negative adjustable regulator. It supply in excess of 1.SA over an output voltage
range of - 1.2V to - 37V.
This regulator requires only two external resistors to
set an output voltage and 1 capacitor to compensate
frequency.
FEATURES
•
•
•
•
Output current in excess of -1.SA
Output voltage adjustable between - 1.2V & - 37V
Internal thermal·overload protection
Internal short·circuit current·limiting
constant with temperature
• Output transistor safe· area compensation
• Floating operation for high·voltage applications
• Standard 3·pin, TO·220 package
1: Ad] 2: Input 3: Output
ORDERING INFORMATION
Operating Temperature
APPLICATION CIRCUIT
- VIN
(j------+----t
KA337
I-----.....----+----{) -
VOUT
ADJ
C2
* - VOUT = -1.2SV (1 + R2/120fl) + (-ladj*R2)
* Output current depends on maximum power dissipation
c8 SAMSUNG~,
Electronics
174
KA337
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Input-Output Voltage Differential
Power Dissipation
Operating Temperature Range
Storage Temperature Range
VIWVOUT
PD
Topr
T5tg
40
Internally limited
0- + 125
-65-+150
V
•
°C
°C
ELECTRICAL CHARACTERISTICS
(V in - Vout = 5V, lout = 0_5A, O°C~Tj~ 125°C, Pmax = 20W, unless otherwise specified)
Characteristic
Line Regulation
Symbol
Vo
Test Conditions
Min
Typ
Max
Ta= 25°C
- 40V ~VOUT - VIN~ - 3V
0.01
0.04
- 40V.VoNo
/lVoN.
1"-1
(%)
Vo=5V
Rsc=O
10=lmA
I!Ni=3V
0.2
1 1-
Vi=12V
VO=5V
Rsc=O
10 =1mA 10 50mA
0.1
-
-r-- ........
0.1
-
V
f'
.......
-'.1
~
I
35
Vi-o (V)
...
voJ"81 I - - -
VIo(V)
/lVI
(V)
I
10=0
4
35
I~PUI Vallag!
(mil)
I
25
Fig. 16 LINE TRANSIENT RESPONSE
/lV.
Jd
(mA),
I
15
Fig. 15 QUIESCENT DRAIN-CURRENT
VS. INPUT VOLTAGE
J
I
-
-~
~
./
~ ::::::
Ta"'Qoc
Ta=25OC
Ta=7O"C
-
~
~V
1
I
I
30
i
40
ILDad
I
If
~urr~nt
'-
.J
i
.
:Vi.12V
~~o..~~A
l(,oeec)
Fig. 18 OUTPUT IMPEDANCE VS. FREQUENCY
Ro
(0)
r-- VO-5V
I
\
I
\
-
25
15
rrr-
-5
i\
I
-4
1:>.10
(mA)
il
~
Vi=12V
VO =5V
lo=1mA
iRSC=o
W
VI (V)
Fig. 17 LOAD TRANSIENT RESPONSE
(mil)
-2
I---
-2
I
!
I
20
!.v.
.......... ~~ltage
V
I
10
/r-...,
I
I
V
-4
J"'.. ~
-u
-0.1
o
•
-
f------
Vi=12V
Rsc .. O
lo=50mA
co=o
1..11"
1
8
6
CO=1,F
4
"'"~v
Output \A)ltage
'RSC=O
i
i
!
I
15
V
0.1
8
6
I
-8
~
2
25
i
35
l(,oeec)
100
c8SAMSUNG
Electronics
1K
10K
'(Hz)
191
NOTES
PWM CONTROLLERS 4
~
~\
Ie
KA7500
LINEAR INTEGRATED CIRCUIT
REGULATOR PULSE WIDTH
MODULATOR
16 DIP
The KA7500 is used for the control circuit of the pulse
width modulation switching regulator. The KA7500 consists of a 5 V reference voltage circuit two error amplifiers, flip-floop, an output control circuit a PWM
comparator a dead time comparator and an oscillator.
This device can be operated in the of switching frequency range, of 1 KHz to 300 KHz.
•
FEATURES
• Internal regulator provides a stable SV reference
supply trimmed to 1%
• Uncommitted output TR for 200mA sink or source
current
• Output control for push-pull or single-ended
operation
• Variable duty cycle by dead time control (pin 4)
• Complete PWM control circuitry
• On-chlp oscillator with master or slave operation
• Internal circuitry prohibits double pulse at either
output
ORDERING INFORMATION
Operating Temperature
BLOCK DIAGRAM
OUTPUT CONTROL
8
13
r - - - - - - - - - - { 12
C1
Vee
5V
BAND GAP REFERENCE t - - - - - - - ; 14
VREF
EA (+)
~~~----~-+------~~---------; 7
GND
EA (-)
c8~SUNG
195
KA7500
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
Characteristic
Symbol
Value
Unit
Supply Voltage
Collector Output Voltage
Collector Output Current
Amplifier Input Voltage
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Vee
Veo
leo
VIN
Pd
Top,
T8tg
42
42
250
Vee + 0.3
1
+70
-65 - +150
V
V
mA
V
W
°C
°C
o-
ELECTRICAL CHARACTERISTICS
(Vee = 20V, f = 10KHz, Ta = 25°C, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
Vo
I,ef= 1mA
4.75
5.0
5.25
V
REFERENCE SECTION
Reference Output Voltage
Line Regulation
t:"Vo
Temperature Coefficient
Load Regulation
Short-Circuit Output Current
t:"V o
Vee = 7V to 40V
2.0
25
mV
Ta=O°C to 70°C
0.01
0.03
%/OC
I,ef= 1mA to 10mA
lse
V,ef=O
Fose
CT= O.D1p.F, RT = 12K
FoselT
CT=0.01p.F, RT=12K
18
Vee = 15V, 0
R,=30K!l
o
20
~
"-.....",
"
"""~
""
~
R,= RESISTANCE FROM PIN 9 TO GROUND
10
100
1K
10K
100K
FREQUENCY (Hz)
c8SAMSUNG
Electronics
1M
10M
~04
LINEAR INTEGRATED CIRCUIT
KA3524
TYPICAL APPLICATIONS
Fig. 9 CAPACITOR·DIODE OUTPUT CIRCUIT
Vee = 15V
15KU
5KU
KA3524
I
•
1N916
Vee
5KU
INV
EI
NON-INV
C1
REF OUT
C2
RT
E2
CT
+C.L.
SHUT
DOWN
-C.L.
-5V
20mA
50).tF
+
OSC OUT COMF
GND
L_
Fig. 10 FLYBACK CONVERTER CIRCUIT
.........R-+-_-;-" + 15V
~-"M"--'-+--+--II NV
'-fI_---=:~-
-15V
KA3524
c8SAMSUNG
Electronics
205
KA3524
LINEAR INTEGRATED CIRCUIT
Fig. 11 SINGLE·ENDED LC CIRCUIT
Vee
TIP115
=28V
Oo9mH
+5V
1A
1N3880
+
5KU
Vee
5KU
INV
E1
NON-INV
C1
REF OUT
C2
5KU
500ILF
RT
E2
CT
+ CoL.
-CoL.
KA3524
0010
RETURN--+-AWIr----'
Fig. 12 PUSH·PULL TRANSFORMER·COUPLED CIRCUIT
5KU
5KU
--~~~~~--+
+
,c8'SAMSUNG
Electronics
5V,5A
206
KA3525AN
LINEAR INTEGRATED CIRCUIT
REGULATOR PULSE WIDTH MODULATOR
The KA3525A of pulse width modulator integrated circuit is design·
ed to offer improved performance and lowered external parts count
when used in designing all types of switching power supplies.
The on-chip + 5.1 volt reference is trimmed to ± 1% and the error
amplifier has an input common-mode voltage range that includes the
reference voltage, eliminating the need for external divider resistors.
A sync input to the oscillator allows multiple units to be slaved together
or a single unit to be synchronized to an external system clock.
A single resistor between the CT and the discharge terminals provides a wide range of dead time adjustment.
This device also features built-in soft-start circuitry, requiring only an
external timing capacitor.
A shutdown pin controls both the soft-start circuitry and the output
stages, providing instantaneous turn off through the PWM latch with
pulsed shutdown, as well as soft-start recycle with longer shutdown
commands.
These functions are also controlled by an undervoltage lockout which
keeps the outputs off and the' soft-start capacitor discharged for subnormal input voltages.
Another feature of this PWM circuit is a latch following the comparator.
Once a PWM pulse has been terminated for any reason, the outputs
will remain off for the duration of the period.
The latch is reset with each clock pulse.
The output stages are totem-pole designs capable of sourcing or sinking in excess of 200mA.
The output stage of the KA3525A features NOR logic, giving a LOW
output for an OFF state.
16 DIP
•
ORDERING INFORMATION
Operating Temperature
FEATURES
•
•
•
•
•
•
•
•
8.0 to 35V Operation
5.1V ± 1.0% Trimmed Reference
100Hz to 500KHz Oscillator Range
Separate Oscillator Sync Pin
Adjustable Dead Time Control
Input Undervoltage Lockout ,vith Hysteresis
Latching PWM to Prevent Multiple Pulses
Pulse-by-Pulse Shutdown
~ DIJal Source/Sink Output Drivers
• Internal Soft-Start
c8SAMSUNG
Electronics
207
KA3525AN
LINEAR INTEGRATED CIRCUIT
BLOCK DIAGRAM
VC
Vee
GND
C
(SOFT
START)
c8SAMSUNG
Electronics
208
KA3525AN
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
V
Power Supply Voltage
Vee
40
Collector Supply Voltage
Ve
40
V
Output Current, Sink or Source
10
500
rnA
IREF
50
mA
Reference Output Current
Icharge
5
mA
Power Dissipation
Po
1000
mw
Operating Temperature
Topr
0- +70
°C
Storage Temperature
Tstg
-65- + 150
°C
Lead Temperature (Soldering, 10 sec)
T1ead
+300
°C
Oscillator Charging Current
•
ELECTRICAL CHARACTERISTICS
(Vee = 20V, Ta = 0 - + 70°C, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
5.0
5.1
5.2
V
REFERENCE SECTION
Reference Output Voltage
VREF
Tj=25°C
Line Regulation
6VREF
Vee=S to 35V
10
20
mV
Load Regulation
6VREF
t=O to 20mA
20
50
mV
100
mA
Short Circuit Current
Ise
Total Output Variation (Note 1)
6VREF
Temperature Stability (Note 1)
6VREF/6T
Long Term Stability (Note 1)
TL
SO
VREF = 0, Tj = 25°C
4.95
5.25
V
20
50
mV
Tj = 125°C, 1 KHrs
20
50
mV
Tj =25°C
±2
±6
%
Vee =St035V
±1
±2
Line, Load and Temperature
OSCILLATOR SECTION
Initial Accuracy (Note 1, 2)
Voltage Stability (Note 1, 2)
6f16Vee
Maximum Frequency
f MAx
RT =2KO, CT =470pF
Minimum Frequency
fMIN
RT =200KO, CT =0.1J.tF
Clock Amplitude (Note 1, 2)
Clock Width (Note 1, 2)
Tj=25°C
Sync Threshold
Sync Input Current
c8SAMSUNG
Electronics
Sync=3.5V
400
%
KHz
120
Hz
V
3
3.5
0.3
0.5
1
1.2
2
2.8
V
1
2.5
mA
itS
209
KA3525AN
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Vee = 20V, Ta = 0 - + 70°C, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
ERROR AMPLIFIER SECTION (VeM=5.1V)
Input Offset Voltage
VIO
2
10
mV
Input Bias Current
liB
1
10
p.A
Input Offset Current
ho
DC Open Loop Gain
Avo
1
Rl~ 10MO
60
75
p.A
dB
Common Mode Rejection Ratio
CMRR
\!eM = 1.5 to 5.2V
60
75
dB
Power Supply Rejection Ratio
PSRR
Vee = 8 to 3.5V
50
60
dB
45
49
0.7
0.9
PWM COMPARATOR SECTION
Minimum Duty Cycle
Dmin
Maximum Duty Cycle
Dmax
Input Threshold Voltage (Note 2)
VTH1
Zero Duty Cycle
Input Threshold Voltage (Note 2)
VTH2
Max Duty Cycle
0
3.3
%
%
V
3.6
V
SOFT-START SECTION
Soft Start Current
Isoft
Soft Start Low Level Voltage
Shutdown Threshold Voltage
50
80
p.A
0.4
0.7
V
0.8
1
V
Vso=2.5V
0.4
1
mA
0.2
0.4
V
1
2
V
Vso=OV, Vss=OV
25
Vso=25V
0.6
Thso
Shutdown Input Current
OUTPUT SECTION
Low Output Voltage I
VOL I
'Sink=20mA
Low Output Voltage 1/
VOL II
ISink = 100mA
High Output Voltage I
VOHI
Isource = 20mA
18
19
High Output Voltage 1/
VOHII
Isource = 100mA
17
18
Under Voltage Lockout
Vuv
Va and Vg = High
6
7
Collector Leakage Current
kKG
Vee=35V
V
V
8
V
200
p.A
Rise Time (Note 1)
Tr
Cl = 1p.F, Tj =25°C
100
600
nS
Fall Time (Note 1)
Tf
Cl = 1p.F, Tj =25°C
50
300
nS
Is
Vee=35V
14
20
mA
ST ANDBY CURRENT
Supply Current
(Note)
1. These parameters, although guaranteed over the recommended operating conditions, are not 100% tested in
production
2. Tested at fose=40 KHz (R T =3.6K, CT =0.01p.F, Ro=OO)
c8SAMSUNG
Electronics
210
LINEAR INTEGRATED CIRCUIT
KA3525AN
Fig. 1. TEST CIRCUIT
3K
PWM
ADJ
I
10K
+
I
I
~~I
1=V1o
2=1 (+)
3=1 (-)
10K
Q
L ___
00l~
mI
----I
L -_ _ _ _ _5_0_p.A--+-_ _ _
L__ ~U2 ____r
2
~2
/
~ Start
-'1' ~5.0P.F~
50~
__-"____J
50K
GND
V."
Sh",~
Fig. 2. KA3525AN OSCILLATOR
~-----+-------+-----4---+-----+---+----f~~~M
BLANKING
TO OUTPUT
c8SAMSUNG
Electronics
211
LINEAR INTEGRATED CIRCUIT
KA3525AN
Fig. 3
\Fig.4 PUSH-PULL CONFIGURATION
SINGLE ENDED SUPPLY
~
1
.vsupply
To Output Filter
·Vsupply
R1
R2
13
11
GND1u-----_-----..
GND
For single-ended supplies, the driver outputs are grounded. The Vc terminal is switched to ground by the totempole source transistors on alternate oscillator cycles.
Fig. 5
DRIVING POWER MOSFETS
In conventional push-pull bipolar designs, forward base
drive is controlled by R1-R3. Rapid turn-off times for the
power devices are achieved with speed-up capacitors C1
and C2.
Flg_ 6
DRIVING TRANSFORMER IN A
HALF-BRIDGE CONFIGURATION
II
GNDLr-~---------+---~
The low source impedance of the output drivers provides
rapid charging of power FET input capacitance while
minimizing external components.
Low poweriransformers can be driven directly by the
KA3525A. Automatic reset occurs during deadtime, when
both ends of the primary winding are switched to ground.
PRINCIPLES OF OPERATION
SHUTDOWN OPTIONS (See Block Diagram)
Since both the compensation and soft-start terminals (Pins 9 and 8) have current source pull-ups, either can readily accept a pull-down signal which only has to sink a maximum of 100/LA to turn off the outputs. This is subject to the added
requirement of discharging whatever external capacitance may be attached to these pins.
An alternate approach is the use of the shutdown circuitry of Pin 10 which has been improved to enhance the available
shutdown options. Activating this circuit by applying a positive signal on Pin 10 performs two functions: the PWM latch
is immediately set providing the fastest turn-off signal to the outputs; and a 150/LA current sink begins to discharge the
external soft-start capacitor. If the shutdown command is short, the PWM signal is terminated without significant discharge
of the soft-start capacitor, thus, allowing, for example, a convenient implementation of pulse-by-pulse current limiting.
Holding Pin 10 high for a longer duration, however, will ultimately discharge this external capacitor, recycling slow turnon upon release.
Pin 10 should not be left floating as noise pickup could conceivably interrupt normal operation.
c8SAMSUNG
Electronics
212
KA3526BN
LINEAR INTEGRATED CIRCUIT
REGULATOR PULSE WIDTH MODULATOR
The KA3526B is a high performance pulse width modulator integrated
circuit intended for fixed frequency switching regulators and other
power control applications.
Functions included in this IC are temperature compensated voltage
reference, sawtooth oscillator, error amplifier, pulse width modulator,
pulse metering and steering logic, and two low impedance power
drivers.
Also included are protective features such as soft-start and undervoltage lockout, digital current limiting, double pulse inhibit, a data
latch for single pulse metering, adjustable deadtime, and provision
for symmetry correction inputs.
All digital control parts are TIL and B-series CMOS compatible. Active low logic design allows easy wired-OR connections for maximum
flexibility. This versatible device can be used to implement singleended or push-pull switching regulator of either polarity, both
transformerless and transformer coupled. The KA3526B is characterized for operation from O°C to + 70°C.
18 DIP
•
FEATURES
• 8 to 35V Operation
• 5V Bandgap Reference Trimmed to ± 1%
•
•
•
•
•
•
•
•
•
•
1Hz to 650KHz Oscillator Range
Dual 100mA Source/Sink Outputs
Programmable Dead Time
Under-Voltage Lockout
Single Pulse Metering
Programmable Soft-Start
Wide Current Limit Common Mode Range
TTl/CMOS Compatible Logic Parts
Symmetry Correction Capability
Digital Current Limiting
ORDERING INFORMATION
Operating Temperature
BLOCK DIAGRAM
VC
r-B
CT
8
SHUTDOWN
CSS
c8 SAMSUNG
Electronics
RESET
213
KA3526BN
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Power supply voltage
Vee
40
V
Collector Supply Voltage
Ve
40
V
Output Current, Sink or Source
10
200
rnA
Characteristic
Reference Load Current
IREF
50
rnA
Power Dissipation
Po
1000
mW
Operating Temperature
Topr
0- +70
°C
Storage Temperature
Tstg
-65- + 150
°C
Lead Temperature (Soldering, 10 sec)
Tlead
+300
°C
ELECTRICAL CHARACTERISTICS
(Vee = 15V, Ta = 0 - + 70°C, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
REFERENCE SECTION (Il = OmA)
5.0
5.1
V
Line Regulation
D. VREF
Vee=7 to 35V
2.0
15
mV
Load Regulation
D. VREF
IL=O to 20mA
5.0
20
mV
mV
Reference Output Voltage
VREF
Temperature Stability (Note)
D.VREF/D. Tj
Output Voltage Range(Note)
D.VREF
Short-Circuit Output Current
Ise
Tj =25°C
4.9
15
50
4.85
5.0
5.15
V
25
50
100
rnA
0.2
0.4
V
Tj=Oto +70°C
VREF=OV
UNDER·VOLTAGE LOCKOUT SECTION
RESET Output Voltage
VRESET
VREF=3.8V
RESET Output Voltage
2.4
VREF=4.7V
VRESET
OSCILLATOR SECTION (folC = 40KHzj RT=4.12KO± 10,4), CT=O.01~F ± 10/0, Ro=OO)
Frequency Change with Temperature (Note)
Tj =25°C
i3
i8
%
Vee=7 to 35V
0.5
1.0
%
D.f/D.Tj
Tj=O tQ70°C
1.0
3.0
%
1.0
Hz
Minimum Frequency
fmln
RT = 150KO, CT= 20j.tF
Maximum Frequency
fmax
RT =2KO, CT= 470pF
Sawtooth Peak Voltage
Vp
Vee = 35V
Sawtooth Valley Voltage
Vv
VIN =7V
SYNC Pulse Width
PW
Rl =2.7KO to Vreh Tj =25°C
c8SAMSUNG
Electronics
V
D.f/D.Vee
Initial Accuracy
Frequency Change with Voltage
4.8
550
650
3.0
0.5
KHz
3.5
V
1.0
V
1.1
j.tS
214
LINEAR INTEGRATED CIRCUIT
KA3526BN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
(V IN =15V, Ta=O-
+ 70°C,
Test Conditions
unless otherwise specified)
Min
Typ
Max
Unit
2.0
10
mV
nA
ERROR AMPLIFIER SECTION (VCM = 0 to 5.2V)
Input Offset Voltage
VIO
Input Bias Current
VIS
·350
·2000
Input Offset Current
110
35
200
DC Open Loop Gain
Av
R1 ~ 10MO, T j = 25°C
60
72
dB
High Output Voltage
V OH
Vpln1- Vpln2~0.15V
Isource = 100ltA
3.6
4.2
V
Low Output Voltage
VOL
Vpln2- Vpln1 ~0.15V
ISlnk = 100ltA
Rs.:S2KO
0.2
0.4
nA
V
Common Mode Rejection Ratio
CMRR
Rs.:S2KO
70
94
dB
Supply Voltage Rejection Ratio
PSRR
Vc:x; = 12 to 18V
66
80
dB
PWM COMPARATOR SECTION (fosc=40KHz; Rr =4.12KO:!: 1%, Cr = O.01ItF:!: 1%, RD=OO)
Minimum Duty Cycle
Maximum Duty Cycle
Dmin
Dmax
V pln3 =0.4V
Vpln3= 3.6V
0
45
49
2.4
4.0
%
%
DIGITAL PORTS (SYNC, SHUTDOWN and RESET)
High Output Voltage
VOH
Isource = 40ltA
Low Output Voltage
VOL
ISink = 3.6mA
0.2
V
0.4
V
High Input Current
IIH
V IH =2.4V
·125
·200
itA
Low Input Current
IlL
VIL=OAV
·225
·360
itA
So
From Pin 8, T j =25°C
160
Shutdown Delay
ns
CURRENT LIMIT COMPARATOR SECTION (VCM=O to 12V)
Sense Voltage
Vs
Input Bias Current
\IB
Rs .:S500, Tj = 25°C
80
100
120
mV
-3.0
·10
itA
SOFT·START SECTION
Error Clamp Voltage
VEe
V pin5 = O.4V
C s Charging Current
les
Vpin5 = 2.4V
0.1
0.4
V
50
100
150
itA
OUTPUT DRIVERS (Each Output) (Vc = 15V)
High Output Voltage I
VoHI
Isource = 20mA
12.5
13.5
High Output Voltage \I
VoHIi
Isource = 100mA
12
13
Low Output Voltage I
Vod
Isink =20mA
0.2
0.3
V
Low Output Voltage II
Vodl
Isink = 100mA
1.2
2.0
V
Collector Leakage Current
ILKG
Ve=40V
50
150
I-'A
Rise Time
TR
CL = 1nF
0.3
0.6
p..S
Fall Time
TF
CL = 1nF
0.1
0.2
Cross Conduction Charge
Ce
Per Cycle, T j = 25°C
V
V
I-'S
nC
8
POWER CONSUMPTION SECTION (Vce=35V, Tr=4.12KO)
Standby Current
Icc
Vplns=0.4V
14
25
rnA
NOTE
-These parameters although guaranteed over the recommended operating conditions are not 100% tested in pro·
duction.
c8SAMSUNG
Electronics
215
I
KA3526BN
LINEAR INTEGRATED CIRCUIT
APPLICATION INFORMATION
VOLTAGE REFERENCE
The reference regulator of the KA35268 is based on a temperature
compensated zener diode. The circuitry is fully active at supply
voltages above + 8 volts, and provides up to 20mA of load current
to external circuitry at + 5.0 volts.
In systems wh.ere additional current is required, an external PNP transistor can be used to boost the available current. A rugged low frequency audio-type transistor should be used, and lead lengths
between the PWM and transmitter should be as short as possible to
minimize the risk of oscillations.
Even so, some types of transistors may require collector-base
capacitance for stability.
Up to 1 amp of load current can be obtained with excellent regulation if the device selected maintains high current gain.
Fig. 1
EXTENDING REFERENCE OUTPUT CURRENT
Gnd-------~~---_4_-
UNDER-VOLTAGE LOCKOUT
The under-voltage lockout circuit protects the KA35268 and the power
devices it controls from inadequate supply voltage. If + VIN is too
low, the circuit disables the output drivers and hold RESET pin LOW.
This prevents spurious output pulses while the control circuitry is
stabilizing, and holds the soft-start timing capacitor in a discharged
state.
The circuit consists of a + 1.2 volt bandgap reference and comparator
circuit which is active when the reference voltage has risen to 3 8 BE ,
or + 1.8 volts at 25°C. When the reference voltage rises to approximately + 4.4 volts, the circuit enables the output drivers and release
the RESET pin, allowing a normal soft-start. The comparator has
200mV of hysteresis to minimize oscillation at the trip point.
When + VIN to the PWM is removed and the reference drops to + 4.2
volts, the under-voltage circuit pulls RESET Low gain.
The soft-start capacitor is immediately discharged, and the PWM is
ready for another soft-start cycle. The KA35268 can operate from a
+ 5 volt supply by connecting the Vref pin to the + VIN pin and maintaining the supply between + 4.8 and + 5.2 volts.
SOFT-START CIRCUIT
The soft-start circuit protects the power transistors and rectifier diodes
from high current surges during power supply turn-on. When supply
voltage is first applied to the KA35268, the under-voltage lockout circuit holds RESET LOW with 03. 01 is turned on, which holds
the soft-start capacitor voltage at zero.
The second collector of 01 clamps the output of the error amplifier
to ground, guaranteeing zero duty cycle at the driver outputs. When
the supply voltage reaches normal operating range, RESET will go
high, 01 turn off, allowing the internal 1OO~ current source to charge
Cs. 02 clamps the error amplifier output IVBE above the voltage on
CSo As the soft-start voltage ramps up to + 5V, the duty cycle of the
PWM linearly increases to whatever value the voltage regulation loop
requires for an error rull.
c8SAMSUNG
Electronics
Fig. 2
SIMPLIFIED UNDER-VOLTAGE LOCKOUT
VREF
TO RESET
TO DRIVER A
TO DRIVER B
Fig. 3
SOFT-START CIRCUIT SCHEMATIC
216
KA3526BN
LINEAR INTEGRATED CIRCUIT
DIGITAL CONTROL PARTS
Fig. 4
The three digital control ports of the KA35268 are bi-directional.
Each pin can drive TTL and 5V CMOS logic directly, up to a fan-out
of 10 low-power schottky gates. Each pin can also be directly driven
by open-collector TTL, open-drain CMOS, and open-collector voltage
comparators; fan-in is equivalent to 1 low-power schottky gate.
Each port is normally HIGH; the pin is pulled LOW to activate the
particular function.
Driving SYNC LOW initiates a discharge cycle in the oscillator.
Pulling SHUTDOWN LOW immediately inhibits all PWM output
pulses. Holding RESET LOW discharges the soft-start capacitor.
The logic threshold + 1.1 volts at + 25°C. Noise immunity can be gained at the expense of fan-out with an external 2K pull-up resistor to
+5 volts.
DIGITAL CONTROL PORT SCHEMATIC
SYNC
To
Internal
Logic
SHUTDOWN
I
or
RESET
OSCILLATOR
The oscillator is programmed for frequency and dead time with three components: RT, CT and RD. Two waveforms are
generated: a sawtooth waveform at pin 10 for pulse width modulation, and a logic clock at pin 12.
The following procedure is recommended for choosing timing values:
1. Remember that the frequency at each driver output is half the oscillator frequency, and the frequency at the + Vc ter- -minal is the same as the oscillator frequency.
2. If more dead time is required, select a large value of RD. At 40KHz dead time increases by 400nStn.
3. Increasing the dead time will cause the oscillator frequency to decrease slightly.
Go back and decrease the value of RT slightly to bring the frequency back to the design value.
The KA35268 can be synchronized to an external logic clock by programming the oscillator to free-run at a frequency 10% slower than
the sync frequency. A periodic LOW logic pulse approximately 0.5/lS
wide at the SYNC pin will then lock the oscillator to the external
frequency.
Multiple devices can be synchronized together by programming one
master unit for the desired frequency, and then sharing its sawtooth
and clock waveforms with the slave units.
All CT terminals are connected to the SYNC pin of the master, and
all SYNC terminals are likewise connected to the SYNC pin of the
master. Slave RT terminals are left open or connected to VREF •
Slave Ro terminals may be either left open or grounded.
ERROR AMPLIFIER
The error amplifier is a transconductance design, with an output impedance of 2 megaohms. Since all voltage gain takes places at the
output pin, the open-loop gain/frequency characteristics can be controlled with shunt reactance to ground. When compensated for unitygain stability with 100pF, the amplifier has an open-loop pole at 400Hz.
The input connections to the error amplifier are determined by the
polarity of the switching supply output voltage. For positive supplies,
the common-mode voltage is + 5.0 volts and the feedback connections in Fig. 6A are used. With negative supplies, the common-mode
voltage is ground and the feedback divider is connected between the
negative output and + 5.0 volt reference voltages, as shown in Fig. 68.
Fig. 5
OSCILLATOR CONNECTIONS AND WAVEFORMS
Fig. 6 A
ERROR AMPLIFIER
CONNECTIONS
Fig. 68
NEGATIVE
~~L~~~
R,
~-
V~EFR21
1
+
VOUT=VREF
R,
R,+R z
~
Gnd
-R-2
R _
R,R 2
3-~
qsSAMSUNG
Electronics
217
KA3526BN
LINEAR INTEGRATED CIRCUIT
OUTPUT DRIVERS
The totem-pole output drivers of the KA3526B are designed to source and sink 100mA continuously and 200mA peak. Loads
can be driven either from the output pins 13 and 16, or from the + Vc pin, as required.
Since the bottom transistor of the totem-pole is allowed to saturate, there is momentary conduction path from the + Vc
terminal to ground during switching. To limit the resulting current spikes a small resistor in series with pin 14 is always
recommended. The resistor value is determined by the driver supply voltage, and should be chosen for 200mA peak currents, as shown in Fig. 9.
Fig. 8. SINGLE-ENDED CONFIGURATION
Fig. 7. PUSH-PULL CONFIGURATION
+ V SUPPLY O-~-,
+V,SUPPLY
TO OUTPUT FILTER
II
RETURN
RETURN
0------.....-----
Fig. 9. DRIVING N-CHANNEL POWER MOSFETS
+15V
/I
RETURN
qsSAMSUNG
Electronics
218
LINEAR INTEGRATED CIRCUIT
KA3842
CURRENT MODE PWM
CONTROLLER
8 DIP
The KA3842 is fixed frequency current-mode PWM controller. It is specially designed for Off-Line and DC-toDC converter applications with minimal external components. This integrated circuit features a trimmed
oscillator .for precise duty cycle control, a temperature
compensated reference, high gain error amplifier, current sensing comparator, and a high current totempole
output Ideally suited for driving a power MOSFET.
I
14 SOP
Protection circuitry includes built in under-voltage
lockout and current limiting.
FEATURES
•
•
•
•
•
•
•
•
Automatic feed forward compensation
Optimized for off·llne converter
Double pulse suppression
Current mode operation to 500KHz
High gain totem pole output
Intemally trimmed bandgap reference
Undervoltage lockout with hysteresis
Low start up current
ORDERING INFORMATION
Device
Package Operating Temperature
KA3842N
8 DIP
0- +70°C
KA3842D
14 SOP
0- + 70°C
BLOCK DIAGRAM
Vee (12)
PWR VC (11)
VFB (3)
COMP (1)
CURRENT SENSE (5)
ATICT (7)
0~----------i1
• (
OSCILLATOR
1-----+------'
PWR GND (8)
) IS 14S0lC PIN NO
c8~SUNG
219
KA3842
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Supply Voltage
Output Current
Analog Inputs
Error Amp Output Sink Current
Power Dissipation
Vee
10
V1N
I slnk
Po
30
±1
-0.3 to Vee
10
1
V
A
V
mA
W
ELECTRICAL CHARACTERISTICS
(*Vec=15V, Rr =10KQ, Cr =3.3nF, 0~TA~70°C, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Unit
Min
Typ
Max
4.90
5.00
5.10
V
6
20
mV
REFERENCE SECTION
Output Voltage
VREF
T j = 25°C, 10 = 1mA
Line Regulation
/:,;V o
12V ~ Vce ~ 25V
Load Regulation
/:,;V o
1mA~lo~20mA
Output Short Circuit
lose
TA=25°C
Fose
Tj = 25°C
6
25
mV
-85
-180
mA
52
57
KHz
0:2
1
OSCILLATOR SECTION
Nominal Frequency
Voltage Stability
Amplitude
Sv
47
12V s,V ee s,25V
1.7
Vose
%
V p_p
ERROR AMPLIFIER SECTION
Input Bias Current
IBI
-0.3
-2
Input Voltage
VIN
VPIN1 =2.5V
2.42
2.50
2.58
AVOL
2V~Vo~4V
65
90
12V ~Vec~25V
60
70
dB
2
6
mA
-0.5
-0.8
mA
5
6
Open Loop Gain
Power Supply Rejection Ratio
PSRR EA
Output Sink Current
151
VP1N2 = 2.7V, VP1N1 = 1.1V
Output Source Current
Iso
V PIN2 = 2.3V, VPIN1 = 5V
V Out High
VOH
V PIN2 = 2.3V, RL = 15KQ to GND
V Out Low
VOL
VPIN2 =2_7V, RL=15KQ to Pin 8
----- - - - -
p.A
V
dB
V
0.8
1.1
V
V/V
CURRENT SENSE SECTION
Gain
Maximum Input Signal
Power Supply Rejection Ratio
Input Bias Current
G
VMAX
PSRRse
IB2
c8SAMSUNG
Electronics
(Note 1 & 2)
2.85
3
3.15
V P1N1 = 5V (Note 1)
0.9
1
1.1
12V ~Vee~25V (Note 1)
70
-2
V
dB
-10
p.A
220
KA3842
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
(Continued)
Test Conditions
Min
Typ
Max
Isink =20mA
0.1
0.4
V
Isink = 200mA
1.5
2.2
V
Unit
OUTPUT SECTION
Output Low Level
VOL
Output High Level
VOH
Isource = 20mA
13
13.5
Isource = 200mA
12
13.5
V
V
Rise Time
Tr
Tj = 25°C, CL = 1nF (Note 3)
50
150
nS
Fall Time
T,
Tj = 25°C, C L= 1nF (Note 3)
50
150
nS
14.5
16
17.5
V
8.5
10
11.5
V
UNDER·VOLTAGE LOCKOUT SECTION
Start Threshold
VlhH
Minimum Operating Voltage
VlhL
After Turn On
TOTAL STANDBY CURRENT
Start-Up Current
lSI
Operating Supply Current
Icc
VP1N2 = V P1N3 = OV
Zener Voltage
Vz
Icc = 25mA
30
0.5
1
rnA
11
17
rnA
36
V
* Adjust Vee above the start threshold before setting at 15V
Note 1. Parameter measured at trip point of latch with VP1N2 = 0
2. Gain defined as: A _ I::::,. VPIN1 • 0 V
08V
- I::::,. V
PIN3
'
~
PIN3~ •
3. These parameters, although guaranteed, are not 100% tested in production.
c8SAMSUNG
Electronics
221
I
LINEAR INTEGRATED CIRCUIT
KA3842
Fig. 1 Open Loop Test Circuit
r---------~--~------------------------~r_----------~VREF
RT
VI
~----~---+--~COMP
EIA
ADJUST
~ '--+---'-IISENSE
i-"-----ir---+-------o\:} OUTPUT
RT/CT
High peak currents associated with capacitive loads necessitate careful grounding techniques Timing and bypass
capacitors should be connected close to pin 5 in a single point ground. The transistor and 5Kn potentiometer are
used to sample the oscillator waveform and apply an adjustable ramp to pin 3.
Fig. 2 Under Voltage Lockout
IcC
<15mA
< 1mA
1Z::::::::~~
___ VI
10V 16V
During Under·Voltage Lock·Out, the output driver is biased to a high impedance state. Pin 6 should be shunted
to ground with a bleeder resistor to prevent activating the power switch with output leakage current.
Fig. 3 Error Amp Configuration
2.5V
O.5mA
Error amp can source or sink up to O.5mA
qsSAMSUNG
Electronics
222
KA3842
LINEAR INTEGRATED CIRCUIT
Fig. 4 Current Sense Circuit
ERROR
11
~ Is
I
Peak current (Is) is determined by the formula:
_1.0V
ISmax- Rs
A small RC filter may be required to suppress switch transients.
Fig. 5 Oscillator Waveforms and Maximum Duty Cycle
LARGE RT
SMALLCT~
/"
V
~
V
_
VPIN4
~
INTERNAL CLOCK
SMALL RT
LARGE R y \ '
I
V
/\
V
i
~
VPIN4
INTERNAL CLOCK
Oscillator timing capacitor, ~, is charged by VREF through RT, and discharged by an internal current source.
During the discharge time, the internal clock signal blanks the output to the low state. Selection of RT and CT
therefore determines both oscillator frequency and maximum duty cycle. Charge and discharge times are deter·
mined by the formulas:
tc"'" 0.55
RT
CT
0.0063
td "", RT CT In( 0.0063
RT - 2.7
RT _ 4 )
Frequency, then, is: f = (tc + td)-1
For RT >5KO, f"'"
R~·~T
c8SAMSUNG
Electronics
223
KA3842
LINEAR INTEGRATED CIRCUIT
Fig. 6 Oscillator Dead Time & Frequency
Fig. 7 Timing Resistance vs Frequency
DEADTIME vs CT(RT>SK)
30
t, /its)
V
10
/
0.3
/
/
2.2
v"
4.7
10
/
~
22
47
1m
100
10K
lK
lOOK
1M
FREQUENCY (Hz)
Fig. 8 Shutdown Techniques
VREF
COMP
ISENSE
SHUTDOWN
TO CURRENT
SENSE-RESISTOR
SHUTDOWN
Shutdown of the KA3842 can be accomplished by two methods; either raise pin 3 above 1V or pull pin 1 below
a voltage two diode drops above ground. Either method causes the output of the PWM comparator to be high (refer
to block diagram). The PWM latch is reset dominant so that the output will remain low until the next clock cycle
after the shutdown condition at pins 1 and/or 3 is removed. In one example, an externally latched shutdown may
be accomplished by adding an SCR which will be reset by cycling Vee below the lower UVLO threshold. At this
point the reference turns oft, allowing the SCR to reset.
Fig. 9 Slope Compensation
!
ISENSE
ISENSE
RSENSE
A fraction of the oscillator ramp can be resistively summed with the current sense signal to provide slope compensation for converters requiring duty cycles over 50%.
Note that capacitor, C, forms a filter with R2 to suppress the leading edge switch spikes.
c8~SUNG
224
KA3842
LINEAR INTEGRATED CIRCUIT
Fig. 11 Error Amplifier Open Loop
Frequency Response
Fig. 10 Output Saturation Characteristics
VaAT
(V)
Gvr---,---,----,----------~
(dB)
J,=
lStv
I---T... =2S·C
60 t----+-~""k_--+---+---.Jf______l
40 I---+---+~~-.....d--_l--__I -90
/
~
t::, . . .
SOUR9Es,..T I(V
II
II
I
SINKs..; (VoJ
4
6
8 10-'
•
20 t----+---+----+---~:____.\d-__l -13S
I Vor)1
~
10- 2
- 45
4
6
r--+---r---+--+-~~~ -160
8 16 (A)
10
100
lK
10K
lOOK
1M
I(Hz)
Fig. 12 25W Off· Line Flyback Converter
FUSE
D1
H
C14
C15
117V~CTNR
.
C16
N
P.G
--_._----u + 12V
t--I__
'-I--.=--4-----Q - 12V
R11
2.7K
2W
Power Supply Specifications
1. Input Voltage:
95VAC to 130VAC (50Hz/60Hz)
2. Line Isolation:
3750V
3. Switchino Frequency:
40KHz
4. Efficiency @ Full Load: 70%
Note: T1·Primary: 35 Turns #26 AWG
Secondary ± 12V: 7 turns #30 AWG (2 strands)
Bifiliar wound
Secondary 5.0V: 3 turns (six strands)
#26 Hexfiliar wound
Secondary Feedback: 8 turns #30 AWG
(2 strands) Bifliar wound
Core: TOK EI-28
Bobbin: TOK EI-28
Gap: 0.2mm for a primary
inductance of 1.0mH
L1-151l H
c8SAMSUNG
Electronics
5. Output Voltage:
A. +5V, ±5%: 1A to 4A load
Ripple voltage: 50mV pop Max.
B. + 12V, ±3%: 0.1A to 0.3A load
Ripple voltage: 100mV pop Max.
C. -12V, ±3%: O.1A to 0.3A load
Ripple voltage: 100mV pop Max.
225
KA3846N
LINEAR INTEGRATED CIRCUIT
CURRENT MODE PWM CONTROLLER
The KA3846 control Ie provides all of the necessary features to implement fixed frequency, current mode control schemes while maintaining a minimum external parts count.
The superior performance of this technique can be measured in improved line regulation, enhanced load response characteristics, and
a simpler, easier-to-design control loop. Topological advantages include inherent pulse-by-pulse current limiting capability, automatic
symmetry correction for push-pull converters, and the ability to parallel
"power module" while maintaining equal current sharing.
Protection circuitry includes built-in-under-voltage lockout and programmable current limit in addition to soft-start capability. A shutdown function is also available which can initiate either a complete
shutdown with automatic restart or latch the supply off.
Other features include fully latched operation, double pulse suppression, deadtime adjust capability, and ± 1% trimnled bandgap
reference.
The KA3846 features low outputs in the OFF state.
16 DIP
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
Automatic Feed Forward Compensation
Programmable Pulse by Pulse Current Limiting
Automatic Symmetry Correction in Push-Pull Configuration
Enhanced Load Response Characteristics
Parallel Operation Capability for Modulator Power Systems
Differential Current Sense Amplifier with Common Mode Range
Double Pulse Suppression
200mA Totem-Pole Outputs
± 1% Bandgap Reference
Under-Voltage Lockout
Soft-Start Capability
Shutdown Terminal
500KHz Operation
ORDERING INFORMATION
Operating Temperature
BLOCK DIAGRAM
VIN
15}--------~r----t
SYNC
SHUT
DOWN
COMP
7 ~-----CURRENT LIMIT
ADJUST
c8SAMSUNG
Electronics
226
LINEAR INTEGRATED CIRCUIT
KA3846N
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Power Supply Voltage
Vee
40
V
Collector Supply Voltage
Ve
40
V
Output Current, Sink or Source (Peak)
10
500
rnA
IREF
30
rnA
Soft Start Sink Current
ISOFT
50
rnA
Sync Output Current
ISyNe
5
rnA
Error Amplifier Output Current
IError
5
rnA
Oscillator Changing Current
lose
5
rnA
Power Dissipation
Po
1000
mW
Reference Load Current
Operating Temperature
Topr
0- +70
°C
Storage Temperature
T stg
-65- + 150
°C
Lead Temperature (Soldering, 10 sec)
T1ead
+300
°C
I
ELECTRICAL CHARACTERISTICS
(Vee = 15V, Ta=O- + 70°C, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
5.00
5.10
5.20
V
5
20
mV
REFERENCE SECTION
Reference Output Voltage
Line Regulation
Load Regulation
Temperature Stability(Note 6)
V REF
T j =25°C,l o =1mA
1:5. VREF
Vee=8 to 40V
1:5. V REF
IL= 1 to 10mA
1:5. VREF/1:5. Tj
Output Voltage Range (Note 6)
Short-Circuit Current
Ise
VREF=OV
VNV
f = 10Hz to 10KHz,. Tj = 25°C
Long-Term Stability (Note 6)
TL
Tj = 125°C, 1KHrs
Electronics
15
mV
1.0
mV/oC
5.25
V
4.95
Output Noise Voltage (Note 6)
qsSAMSUNG
3
0.4
-10
-45
rnA
100
2
5
p,V
8
mV
227
LINEAR INTEGRATED CIRCUIT
KA3846N
ELECTRICAL CHARACTERISTICS
(Vee = 15V, Ta=O- + 70°C, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
43
47
KHz
-1
2
%
OSCILLATOR SECTION (Note 2),
Initial Accuracy
Tj =25°C
Frequency Change with Voltage
!::,.fNee
Frequency Change with
Temperature (Note 6)
!::,.f/!::,.Tj
Sync Output High Level
VOH
Sync Output Low Level
VOL
Sync Input High Level
VIH
Pin 8=OV
Sync Input Low Level
VIL
Pin 8=OV
Sync Input Current
II
39
Vee=8 to 40V
-1
3.9
%
4.35
2.3
V
2.5
1.3
Sync Voltage = 3.9V, Pin 8 = OV
V
V
3.9
2.5
V
1.5
mA
mV
ERROR AMPLIFIER SECTION
Input Offset Voltage
VIO
0.5
5
Input Bias Current
liB
-0.6
-1
pA
Input Offset Current
110
40
250
nA
Common-Mode Range
VeMA
Open Loop Voltage Gain
Av
Unity Gain Bandwidth (Note 6)
Vin =8 to 40V
0
Vo= 1.2 to 3V, VeM =2V
80
Vee-2
V
105
dB
Tj =25°C
0.7
1.0
MHz
Common Mode Rejection Ratio
CMRR
VCM=O to 38V, Vcc=40V
75
100
dB
Supply Voltage Rejection Ratio
PSRR
Vcc=8 to 40V
80
105
dB
V IO = -15mV to 5V, Vpin 7= 1.2V
2
6
mA
-0.4
-0.5
mA
4.3
4.6
GBW
Output Sink Current
ISink
Output Source Current
Isource
V IO = 15mV to 5V, Vpin 7=2.5V
High Level Output Voltage
VOH
RL=15KO
VOL
RL=15KO
Low Level Output Voltage
V
0.7
1
V
3.0
V
CURRENT SENSE AMPLIFIER SECTION
Amplifier Gain (Note 1, 3)
Gv
Vpin3 =OV, Pin 1 open
2.5
2.75
Maximum Differential Input
Signal (Vpin4-Vpin3) (Note 1)
VDM
RL = 15KO, Pin 1 open
1.1
1.2
VIO
Vpin1 = 0.5V, Pin 7 open
83
Input Offset Voltage (Note 1)
5
Common Mode Rejection Ratio
CMRR
VCM = 1 to 12V
60
Supply Voltage Rejection Ratio
PSRR
Vin =8 to 40V
60
V
25
mV
dB
84
dB
Input Bias Current (Note 1)
liB
Vpin1 = 0.5V, pin 7 open
-2.5
-10
/LA
Input Offset Current (Note 1)
110
Vpin1 = 0.5V, Pin 7 open
0.08
1
/LA
Delay to Outputs (Note 6)
Td
Tj =25°C
200
500
nS
dCSAMSUNG
• • Electronics
228
KA3846N
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Vcc =15V, Ta=O- +70°C, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
0.45
0.5
0.55
V
-10
-30
pA
350
400
mV
CURRENT LIMIT ADJUST SECTION
Current Limit Offset Voltage (Note 1)
Input Bias Current
VCL
115
Vpin3 =OV
Vpin4 =OV, Pin 7 open
VpinS = Vret. VpinS = OV
SHUTDOWN TERMINAL SECTION
Threshold Voltage
VrH
250
Input Voltage Range
VCM
0
Minimum Latching Current (Note 4)
iL, Min
3.0
Maximum Non-Latching Current (Note 5)
IL, Max
Yin
V
mA
1.5
1.5
0.8
mA
UNDER·VOLT AGE LOCKOUT SECTION
Start-up Threshold
VSrH
7
7.7
8.4
V
Threshold Hysteresis
VHYS
0.45
0.75
1.05
V
200
",A
V
OUTPUT SECTION
i
L
Collector-Emitter Voltage
Vc
Collector Leakage Current
ILeak
Vc=40V
V
40
Low Output Voltage I
VaLl
Isink =20mA
0.1
0.4
Low Output Voltage lJ
Valli
Isink = 100mA
0.4
2.1
High Output Voltage I
VOHI
High output Voltage II
VOHII
Isource = 20mA
13
13.5
Isource = 100mA
12
13.5
V
V
V
Rise Time (Note 6)
Tr
C L= 1nF, Tj =25°C
50
300
",5
Fall Time (Note 6)
Tf
CL= 1nF, Tj = 25°C
50
300
",8
17
21
mA
TOTAL STANDBY CURRENT
Supply Current
Is
(Notes)
1. Parameter measured at trip point of latch with Vpins = VREF , Vpins=OV
2. Rr =10KO, Cr =4.7nF
6V.
3. Amplifier gain defined as: G=~; 6Vpin4 =0 to 1.0V
6V pin4
4. Current into Pin 1 guaranteed to latch circuit in shutdown state.
5. Current into Pin 1 guaranteed not to latch circuit in shutdown state.
6. These parameters, although guaranteed over the recommended operating conditions, are not 100% tested in production.
c8SAMSUNG
Electronics
229
•
KA3846N
LINEAR INTEGRATED CIRCUIT
Fig. 1. KA3846N OSCILLATOR CIRCUIT
OSC.
n n
(PIN
10)
---.I
----....
_ _
-111 SYNC
OUTPUT DEADTIME (T9)
Output deadtime is determined by the external capacitor, CT, according to the formula: Td (j.tS) = 145CT (p.F)
For large values of RT: Td (p.S) =145CT (p.F)
12
12 -
3.6
Oscillator frequency is approximately by the formula: h (kHz) = _ _
2_.2_ _
RT(KO) CT(p.F)
Fig. 2. ERROR AMPLIFIER OUTPUT CONFIGURATION
Error amplifier can source up to O.5mA
c8SAMSUNG
Electronics
>230
KA3846N
LINEAR INTEGRATED CIRCUIT
Fig. 3 .. PARALLEL OPERATION
MASTER
I
SLAVE
Slaving allows parallel operation of two or more
units with equal current sharing
Fig. 4. PULSE BY PULSE CURRENT LIMITING
Is
(+)
Peak Current (Is) is determined by the formula:
_(R2 • VREF
Is - R1 + R2
_
0.5)
3R s
Fig. 5. CURRENT SENSE AMP CONNECTIONS
Is
~
R
Rs
A small RC filter may be required in some applications to reduce switch transients.
Differential input allows remote, noise free sensing.
c8SAMSUNG
Electronics
231
KA3846N
LINEAR INTEGRATED CIRCUIT
Fig. 6. SOFT-START AND SHUTDOWN/RESTART FUNCTIONS
V"EF
LIMIT
---1L 1 6 } - - - I - - - - - - I
SHUTDOWN WITH AUTO RESTART
O.5V
;
SHUTDOWN WITHOUT AUTO.RESTART (LATCHE[I)
SHUTDOWN
ON
(~
I~_--------....~rl~------....--~J
OFF
PWM
If
V
REF
R,
< a.SmA, the shutdown latch will commutate
when Iss = a.SmA and a restart cycle will be initiated.
\\:~--....--............-___________
,~f_ _ _~n
.Jill ~
If
VREF>
>3mA (LATCHED OFF)
3mA, the device will latch off
R,
until power is recycled
Fig. 7. SINGLE ENDED BOOST CONFIGURATION
r-............--................~15~............- - - - - - - - - .
FEEDBACK
cRSAMSUNG
•• Electronics
232
KA3846N
LINEAR INTEGRATED CIRCUIT
Fig. 8. BUCK CONVERTER WITH CURRENT SENSE WINDING
•
Ground
Fig. 9. PUSH-PULL CONVERTER SLOPE COMPENSATION
RCOMPENSATION
~----------------'--------~15)---------------~
III
FEEDBACK
~
INDUCTOR CURRENT
DOWNSLOPE
Current loop instability above 50% duty cycle can be corrected using slope compensation derived from the sawtooth oscillator.
Compensation magnitude should be greater than 1/2 of the downslope of the inductor current waveform as shown. Alternatively, the compensation signal can be summed into the negative input of the error amplifier.
c8SAMSUNG
Electronics
233
KA34063N
LINEAR INTEGRATED CIRCUIT
DC TO DC CONVERTER CONTROLLER
8 DIP
The KA34063 is a monolithic switching regulator subsystem intended
for use as DC to DC converter. This device contains an internal
temperature compensated reference, comparator, controlled duty
cycle oscillator with an active peak current limit circuit, driver and
a high current output switch.
It was specifically designed to be incorporated in step-up, step-down
and voltage inverting converter applications.
These function are contained in an 8 pin dual in-line package.
FEATURES
•
•
•
•
•
•
Operation from 2.5 to 40V Input
Short Circuit Current Limiting
Low Standby Current
Output Switch Current of 1.5A
Output Voltage Adjustable from 1.25V to 40V
Frequency of Operation from 100Hz to 100KHz
ORDERING INFORMATION
Operating Frequency
BLOCK DIAGRAM
DRIVE
SWITCH
COLLECTOR COLLECTOR
CQMPARATOR
INVERTING
INPUT
GND
TIMING
CAPACITOR
·Vcc(6)
c8SAMSUNG
Electronics
IPK
OSCILLATOR 1 - - - 4 - - - - - - i R
CT
SWITCH
EMITTER
234
LINEAR INTEGRATED CIRCUIT
KA34063N
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Vee
40
V
Power Supply Voltage
VIR
-0.3- +40
V
Switch Collector Voltage
Ve(sW)
40
V
Switch Emitter Voltage
VE(SW)
40
V
Switch Collector
To Emitter Voltage
VeE (sW)
40
V
Driver Collector Voltage
Ve (driver)
40
V
Isw
1.5
A
Comparator Input Voltage Range
Switch Current
•
ELECTRICAL CHARACTERISTICS
(Vee = 5.0V, Ta=O- +70°C, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OSCILLATOR
Charging Current
Ichg
Vee=5 to 40V
Ta=25°C
20
35
50
pA
Discharge Current
IdiSchg
Vee =5t040V
Ta=25°C
150
200
250
p.A
Voltage Swing
Vase
Ta=25°C
0.5
Discharge To Charge
Current Ratio
Idischg
Ichg
Ipk(sense) = Vee,
Ta=25°C
6.0
Current Limit Sense
Voltage
V 1PK
(sense)
Ichg = Idischg
Ta=25°C
Saturation Voltage I (Note)
VeE (sat) I
Saturation Voltage II (Note)
VeE (sat) II
250
V
300
350
mV
Isw= 1.0A,
Ve (driver) = Ve (SW)
1.0
1.3
V
Isw= 1.0A,
Ve (driver) = 50 rnA
0.5
0.7
V
10
200
nA
1.25
1.32
V
0.04
0.2
mVN
OUTPUT SWITCH
DC Current Gain (Note)
Collector off State Current (Note)
hFE
Isw= 1.0A,
VeE =5.0V, Ta=25°C
Ie (off)
VeE = 40V, Ta=25°C
70
150
COMPARATOR
Threshold Voltage
VrH
Threshold Voltage
Line Regulation
!:::.Vth
Input Bias Current
liB
VIN=OV
35
300
nA
Icc
Vee=5 to 40V
Cr =0.001p.F
Ipk (sense) = Vee
Vpin 5> Vth
pin2=GND
2.4
3.5
rnA
1.18
Vee=3 to 40V
TOTAL DEVICE
Supply Current
(Note)
Output switch tests are performed under pulsed conditions to minimize power dissipation.
c8SAMSUNG
Electronics
235
LINEAR INTEGRATED CIRCUIT
KA34063N
Fig. 1. Step-Down Converter
Vee
25V
+
YOU!
·'---------AMr------------47-0-~-Q 5.0 V/500mA
I-tFm
Test
Conditions
Results
Line Regulation
Vee=15 to 25V, 10=500mA
15mV
Load Regulation
Vee =25V, 10=50 to 500mA
5.0mV
Output Ripple
Vee=25 V, 10='500mA
40mV
Short Circuit Current
Vee = 25V, RL = 0.10
2.3A
Efficiency
Vee = 25V, 10 = 500mA
84.7%
r-.
f--
Co
c8SAMSUNG
Electronics
236
LINEAR INTEGRATED CIRCUIT
KA34063N
Fig. 2. Step-Up Converter
L
KA34063N
I
lN5819
Rse
VCCQ---J...-.,...-----t
12V
R2
Vout
~----------ItI+t----------+----o 28V 17SmA
47K
Fig. 6
Test
Conditions
Results
Line Regulation
Vee=8.0 to 16V, 10= 175mA
12mV
Load Regulation
Vee = 12V, 10=75 to 17SmA
45mV
Output Ripple
Vee = 12 V, 10= 175mA
150mV
Short Circuit Current
Vee = 12V, RL=O.1n
2.0A
Efficiency
Vee = 12V, 10= 17SmA
93%
c8SAMSUNG
Electronics
237
LINEAR INTEGRATED CIRCUIT
KA34063N
Table: Design Formula
Calculation
Step-Down
Step-Up
ton
-toft
Vout+ VF
VOUT+VF-VCC (min)
Vee (min)- Vsat- Vout
Vee (min) - Vsat
(ton + toft) max
1
-fmin
1
-fmin
CT
4x 10.5 ton
4x 10.5 ton
Ipk (switch)
2 louT (max)
ton + toft
2 louT (max) - toft
Rsc
L (min)
O.33/lpk (switch)
Vee (min)-Vsat-Vout
ton (max)
Ipk (switch)
Co
Ipk (switch) (ton + toft)
8Vripple (p-p)
O.33/lpk (switch)
Vee (min)-Vsat_ ton (max)
Ipk (switch)
lOUT ton
---Vripple (p-p)
Vsat = Saturation Voltage of the output switch.
VF=Forward Voltage drop of the rectifier.
The following power supply characteristics must be chosen:
Vee: Normal input voltage, if this voltage is not constant, then use Vee (max) for step-down and Vee (min) for step-up converter.
R2
Vout: Desired output voltage, Vout = 1.25 (1 + R1 )
lout: Desired output current.
fmin: Minimum desired output switching frequency at the selected values for Vee and 10.
Vripple (p-p): Desired peak-ta-peak output ripple voltage. in practice, the calculated value will need to be increased due
to the capacitor's equivalent series resistance and board layout.
The ripple voltage should be kept to a low value since it will directly eftect the line and load regulation.
c8SAMSUNG
Electronics
LINEAR INTEGRATED CIRCUIT
KA34063AN
DC TO DC CONVERTER CONTROLLER
8 DIP
The KA34063A is a monolithic switching regulator subsystem intended for use as DC to DC converter. This device contains an internal
temperature compensated reference, comparator, controlled duty
cycle oscillator with an active peak current limit circuit, driver and
a high current output switch.
It was specifically designed to be incorporated in step-up, step-down
and voltage inverting converter applications.
These function are contained in an 8 pin dual in-line package.
I
FEATURES
•
•
•
•
•
•
Operation from 3.0 to 40V Input
Short Circuit Current Limiting
Low Standby Current
Output Switch Current of 1.SA
Output Voltage Adjustable
Frequency of Operation from 100Hz to 100KHz
ORDERING INFORMATION
Operating Frequency
BLOCK DIAGRAM
DRIVE
SWITCH
COLLECTOR COLLECTOR
S
COMPARATOR
INVERTING
INPUT
GND
TIMING
CAPACITOR
'VCd6)
c8SAMSUNG
Electronics
IPK
OSCILLATOR J - - - 4 - - - - - - f R
CT
SWITCH
EMITIER
239
LINEAR INTEGRATED CIRCUIT
KA34063AN
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Power Supply Voltage
Vee
40
V
Comparator Input Voltage Range
VIA
-0.3- +40
V
Switch Collector Voltage
Ve(sW)
40
V
Switch Emitter Voltage
VE(SW)
40
V
Switch Collector
To Emitter Voltage
VeE (sW)
40
V
Driver Collector Voltage
Ve (driver)
40
V
Isw
1.5
A
Switch Current
ELECTRICAL CHARACTERISTICS
(Vee = 5.0V, Ta = 0 - + 70°C, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OSCILLATOR
Charging Current
Ichg
Vee=5 to 40V
Ta=25°C
22
33
42
p,A
Discharge Current
IdisChg
Vee=5 to 40V
Ta=25°C
140
200
260
p,A
Voltage Swing
Vose
Ta=25°C
Discharge To Charge
Current Ratio
Idischg
Ichg
Ipk(sense) = Vee,
Ta=25°C
5.2
6.2
7.5
Current Limit Sense
Voltage
V IPK
(sense)
Ichg = Idischg
Ta=25°C
250
300
350
mV
VeE (sal) I
Isw= 1.0A,
Ve (driver)=Ve (SW)
1.0
1.3
V
VeE (sal) II
Isw= 1.0A,
Ve (driver) = 50mA
0.45
0.7
V
100
nA
1.29
V
0.5
V
OUTPUT SWITCH
Saturation Voltage I (Note)
f----~----
Saturation Voltage II (Note)
DC Current Gain (Note)
Collector off State Current (Note)
hFE
Isw= 1.0A,
V eE =5.0V, Ta=25°C
Ie (off)
VeE = 40V, Ta = 25°C
50
120
10
COMPARATOR
Threshold Voltage
VrH
Threshold Voltage
Line Regulation
6Vth
Input Bias Current
he
1.21
Vee=3 to 40V
1.4
5.0
mV
VIN:::OV
40
400
nA
2.5
4.0
mA
TOT AL DEVICE
Supply Current
Icc
Vee=5 to 40V
Cr =0.001p,F
Ipk (sense) = Vee
Vpin 5>Vth
pin2=GND
(Note)
Output switch tests are performed under pulsed conditions to minimize power dissipation.
c8SAMSUNG
Electronics
240
LINEAR INTEGRATED CIRCUIT
KA34063AN
FIG. 1. STEP-DOWN CONVERTER
•
Vee
25V
Vout
5.0 V/SOOmA
470
"Fili
Test
Line Regulation
Co
Conditions
Results
Vee = 15 V to 25 V, 10 = 500mA
12mV= ±0.12%
±0.03%
Load Regulation
Vee=25 V, 10=50 to 500mA
3.0mV =
Output Ripple
Vee = 25V, 10 = 500mA
120mVp-p
Short Circuit Current
Vee = 25V, RL =0.10
1.1A
Efficiency
Vee = 25V, 10 = 500mA
82.5%
Output Ripple with Optional Filter
Vee = 25V, 10 = 500mA
40mVp-p
FIG. 2. STEP-UP CONVERTER
R2
~--~---.~--+---o
Al ;n2.2K
Test
47K
in Co
You!
28V175mA
150 i,F
Results
Conditions
30mV= ±O.O5%
Line Regulation
V ee =8.0 V to 16 V, 10= 175mA
Load Regulation
Vee = 12 V, 10 = 75 to 175mA
10mV= ±O.017%
Output Ripple
Vee = 12V, 10= 175mA
400mVp-p
Efficiency
Vee = 12V, 10= 175mA
89.2%
Output Ripple with Optional Filter
Vee = 12V, 10= 175mA
40mVp-p
c8SAMSUNG
Electronics
241
LINEAR INTEGRATED CIRCUIT
KA34063AN
Fig. 3. VOL.:TAGE INVERTING CONVERTER
0.24
Vee
4.5V to 6.0V
m
100
1N5819
~_ _ _~R.A1"-_ _ _ _ _ _ _ _ _ _"""t---+_-O YOU!
953
-12V 100mA
1000.,...
m
Test
Conditions
Results
Line Regulation
Vee = 4.5 V to 6.0 V, 10 = 100mA
3.0mV = ± 0.012%
Load Regulation
Vcc=5.0 V, 10= 10 to 100mA
0.022V = ± 0.09%
Output Ripple
Vcc=5.0V,lo=100mA
50mVp-p
Short Circuit Current
Vcc=5.0V, RL=O.Hl
910mA
Efficiency
Vcc=5.0V,lo=100mA
64.5%
Output Ripple with Optional Filter
Vcc=5.0V,lo=100mA
70mVp-p
c8SAMSUNG
Electronics
242
LINEAR INTEGRATED CIRCUIT
KA34063AN
Table: Design Formula
Calculation
Step-Down
Step-Up
ton
Vout+ V F
VOUT + V F - Vee (min)
IVoutl + V F
toff
Vee (min) - Vsat - Vout
Vee (min) - Vsat
Vcc- Vsat
(ton + toft) max
1
-fmin
--
CT
4x 10-5 ton
4 x 10-5 ton
Ipk (switch)
2 lOUT (max)
Rse
L (min)
(Vee (min)-Vsat-Vout)
ton (max)
Ipk (switch)
Co
1
1
--
fmin
fmin
2 lOUT (max)
0.3/lpk (switch)
Voltage-Inverting
( ton +toff )
---toff
0.3/lpk (switch)
(Vee (min)-Vsat)
•
4x 10-5 ton
210ut(max) (ton/toft + 1)
0.3/1pk (switch)
(Vcc(min) - Vsat)
ton (max)
Ipk (switch)
Ipk (switch)
ton (max)
--
Ipk (switch) (ton + toff)
louT ton
lOUT ton
8 Vripple (p-p)
Vripple (p-p)
Vripple (p-p)
Vsat = Saturation Voltage of the output switch.
VF = Forward Voltage drop of the rectifier.
The following power supply characteristics must be chosen:
Vee: Normal input voltage, if this voltage is not constant, then use Vee (max) for step-down and Vee (min) for step-up converter.
R2
Vout: Desired output voltage, Vout = 1.25 (1 + R1 )
lout: Desired output current.
fmin: Minimum desired output switching frequency at the selected values for Vee and 10.
Vripple (p-p): Desired peak-to-peak output ripple voltage. in practice, the calculated value will need to be increased due
to the capacitor's equivalent series resistance and board layout.
The ripple voltage should be kept to a low value since it will directly effect the line and load regulation.
c8SAMSUNG
Electronics
243
NOTES
LINEAR INTEGRATED CIRCUIT
KA431C/ACii
PROGRAMMABLE PRECISION REFERENCES
The KA431 is a three-terminal adjustable regulator ~eries with a
guaranteed thermal stability over applicable temperature ranges. The
output voltage may be set to any value between Vref (approximately 2.S
volts) and 36 volts with two external resistors. These devices have a
typical dynamic output impedance of 0.20. Active output circuitry
providl)S a very sharp turn-on characteristic, making these devices
excellent replacement for zener diodes in many applic~tions.
The KA4311 is characterized for operation from - 40°C to + 8SoC, and
the KA431 C/AC from O°C to 70°C.
8 DIP
1: Ref. 2: Anode 3: Cathode
FEATURES
•
•
•
•
•
Programmable output voltage to 36 volts
Low dynamic output Impedance 0.20 typical
Sink current capability of 1.0 to 100mA
Equivalent full·range temperature coefficient of SOppm/oC typical
Temperature compensated for operation over full rated operating
temperature range
• Low output noise voltage
• Fast tum on response
BLOCK DIAGRAM
a SOP
2, 3, 4, 7: N.C.
1
1: Cathode 2, 3, 8,7: Anode 8: Ref.
4,5: N.C.
ORDERING INFORMATION
REFERENCE ()--'-----f"",.
CATHODE
Device
ATHODE(K)
REFERENCE (R) 0 -
Operating Temperature Package
o -+70°C
o -+70°C
TO-92
IKA431CN
IKA431 CD
0-+70°C
a SOP
KA4311Z
-40-+85°C
TO-92
KA431IN
-40-+8SoC
a DIP
0- + 70°C
TO-92
KA431CZ
l
1
1: Cathode 8: Anode 8: Ref.
KA431ACZ
8 DIP
bANODE (A)
SCHEMATIC DIAGRAM
CATHODE
D2
ANODE
c8~SUNG
247
I
LINEAR INTEGRATED CIRCUIT
KA431C/AC/I
ABSOLUTE MAXIMUM RATINGS
(Operating temperature range applies unless otherwise specified.)
Characteristic
Cathode Voltage
Symbol
Value
Unit
VKA
37
V
IK
-100 - + 150
mA
Reference Input Current Range
IREF
0.05 -+10
mA
Power Dissipation
D, Z Suffix Package
N Suffix Package
Po
770
1000
mW
mW
Operating Temperature Range
KA431CZ, KA431CN, KA431CD, KA431ACE
KA4311Z, KA4311N
Topr
0-+70
-40 -+85
Storage Temperature Range
Ts1g
°C
°C
DC
Cathode Current Range (Continuous)
-65 -+150
RECOMMENDED OPERATING CONDITIONS
Characteristic
Typ
Symbol
Min
Cathode Voltage
VKA
VREF
36
V
Cathode Cu rrent
IK
1.0
100
mA
ELECTRICAL CHARACTERISTICS
Max
Unit
(Ta = 25°C, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Reference Input Voltage
VREF
VKA=VREF,IK=10mA
Deviation of Reference
Input Voltage Over·
Temperature (Note 1)
VREF (dev)
VKA=VREF,IK=10mA
TminsTasTmax
KA431C
Min
KA431AC
Typ Max Min
KA431 I
Typ Max Min
Typ Max
2.440 2.495 2.550 2.470 2.495 2.520 2.440 2.495 2.550
4
17
4
17
5
30
Unit
V
mV
Ratio of Change in
Reference Input Voltage
to the Change in
Cathode Voltage
D.VREF
Reference Input Current
IREF
'K=10mA, R1=10KD, R2 =00
2
4
2
4
2
4
pA
Deviation of Reference
Input Current Over
Full Temperature Range
IREF(dev)
IK= 10mA, R1 = 10KD, R2 = 00
Ta=Full Range
0.4
1.2
0.4
1.2
0.8
2.5
pA
Minimum Cathode Cur·
rent for Regulation
IK(min)
VKA = VREF
0.4
1.0
0.4
1.0
0.4
1.0
rnA
Off·State Cathode
Current
IK(off)
VKA =36V, VREF=O
0.1
1.0
0.1
1.0
0.1
1.0
pA
Dynamic Impedance
(Note 2)
ZKA
VKA=VREF, IK=1 to 100mA
fs1.0KHz
0.2
0.5
0.2
0.5
0.2
0.5
0
IK=10mA
D.VKA
D.VKA =10V·VREF
-1.4 -2.7
-1.4 -2.7
-1.4 -2.7
I!:::.KKA=36V-10V
-1.0 -2.0
-1.0 -2.0
-1.0 -2.0
mVN
*KA431C/AC: Tmin=OoC, Tmax= + 70°C
KA4311: Tmin= -40°C, Tmax= +85°C
c8SAMSUNG
Electronics
'
248
LINEAR INTEGRATED CIRCUIT
KA431C/AC/I
Note: 1. The deviation parameters VREF(dev) and IREF(dev) are defined as the differences between the maximum and
minimum values obtained over the rated temperature range. The equivalent full-range temperature coefficient
MAX VREF~:
~_ _
~
__.
of the reference input voltage, aVREF is defined as:
M
ax
V"' Mi
n
V,,,
aVREF
ppm
(-cc) =
Jv,,,
I
"T, V,,,,,,,,
(
VREF(dev) ) X 106
V REF @25°C
6T
A
MIN VREF
,oEVI
---
I·
,--------
~6TA-_____l
where 6 TA is the rated operating free-air temperature range of the device.
aV REF can be positive or negative depending on whether minimum V REF or maximum V REF respectively,
occurs at the lower temperature
Example: Max V REF =2500mV@30°C, Min VREF =2492mV@O°C, V REF =2495mV@25°C, 6T A=70°C for;
KA431C
Because minimum V REF occurs at the lower temperature, the coefficient is positive.
2. The dynamic impedance is defined as:
I ZKA I
=
66~:A
When the device is operated with two external resistors (see Figure 2), the total dynamic impedance of
the circuit is given by:
IZ I =
f
~~
= I ZKA I (1 +
:~)
TEST CIRCUITS
Fig. 1 Test Circuit for VKA = VREF
INPUT
o-~YIt--~--o
Fig_ 2 Test Circuit for VKA~ V REF
INPUT o---ItM....--....----Q
R1
R2
m
Fig. 3 Test Circuit for
VKA = VREF
(1
+ R1/R2) + IREF
R1
loll
c8SAMSUNG
Electronics
249
I
KA431C/AC/I
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 5 CATHODE CURRENT VS CATHODE VOLTAGE
Fig. 4 CATHODE CURRENT VS CATHODE VOLTAGE
800
VKA:::Vrel
T.=25°C
125
VKA::::V ref
T.=25°C
600
100
1m;,
)
5
V
5
-50
/
-75
/
-100
-2
/
I
r
-200
-1
-1
Cathode Voltage (V)
Cathode Voltage (V) .
Fig. 6 CHANGE IN REFERENCE INPUT
VOLTAGE VS CATHODE VOLTAGE
\'
>g
-5
i
-10
I
-15
i
-20
IK =10mA
T.=25°C
1,\
40
~
~
.5
.!!
:.
-25
.5
I
-30
~
'" '"
-35
-40
Fig. 7 NOISE VOLTAGE VS FREQUENCY
50
o
10
15
20
!
t
~
'" '"
25
30
:ll
'"
VKA = V,''.
I K =10mA
I
T.=25'C
I....
-"""'r---
30
20
'0
Z
10
l'
35
__~~~__~~~~-L~~
100
400 1 K
4K 10K
40K lOOK
OL-~LU~
10
40
40
Frequency (Hz)
Cathode Voltage (V)
Fig. 9 SMALL SIGNAL VOLTAGE
Fig. 8 DYNAMIC IMPEDANCE VS FREQUENCY
AMPLIFICATION VS FREQUENCY
100
70
70
;:
1~;~O'1'bomA
T~:!26JJ
IK =10mA
40
60
20
50
r~
10
b-..
iii
:s
§:
6
40
~
30
i
20
~
g
~
!.
.E
1-10-
I
0.7
0.2
0.1
~
,
0.4
Ii
lK
10K
1\
~
ffi
/
.............
I
2.5
3.5
4.5
REVERSE VOLTAGE (V)
5.5
4.84
-50
I
-25
25
50
75
100
125
TEMPERATURE (OC)
Fig. 7 FORWARD CHARACTERISTICS
0.2
_r--
FORWARD CURRENT (mAl
c8SAMSUNG
Electronics
259
KA336·5.01 BI KA236·5.0
LINEAR INTEGRATED CIRCUIT
TYPICAL APPLICATIONS
Fig. 9 5.0V REFERENCE WITH MINIMUM
TEMPERATURE COEFFICIENT
Fig. 8 5.0V REFERENCE
10V
5.0V
1N457'
KA336·5.0
KA336·5.0 ~--·~10K\t
1N457'
t Adjust to 5V
• Any silicon signal diode
Fig. 10 TRIMMED 4V TO 6V REFERENCE WITH TEMPERATURE
COEFFICIENT INDEPENDENT OF BREAKDOWN VOLTAGE
10V
Fig. 11 PRECISION POWER REGULATOR WITH
LOW TEMPERATURE COEFFICIENT
Your
KA336·5.0 ~--<6~~~BRATE
• Does not affect temperature coefficient
R1
625
FIGURE 10
Fig. 12 5VCROWBAR
V+.-----~------~-
SENSITIVE
GATE SCR
c8SAMSUNG
Electronics
260
LINEAR INTEGRATED CIRCUIT
KA201 AlKA301 A
8 DIP
SINGLE OPERATIONAL AMPLIFIER
The KA201A and KA301A are general-purpose operational amplifiers
which are externally phase compensated, permit a choice of operation
for optimum high-frequency performance at a selected gain: unity-gain
compensation can be obtained with a single capacitor.
FEATURES
8 SOP
•
•
•
•
Short-circuit protection and latch-free operation
Slew rate of 10V/p,s as a summing amplifier
Class AB output provides excellent linearity
Low bias current
BLOCK DIAGRAM
NULUCOMPENSATION
1
•
8
COMPENSATION
ORDERING INFORMATION
Device
KA301AN
5
OFFSET NULL
KA201AN
KA301AD
KA201AD
Package Operating Temperature
0- + 85°C
8 DIP
8 SOP
-25- + 70°C
0- +85°C
-25- +85°C
SCHEMATIC DIAGRAM
r---~--~~-------+--~~------------'---oVcc
R11
L------+--~....(J
c8SAMSUNG
Electronics
OUTPUT
263
I
KA201 AlKA301 A
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
KA201A
KA301A
Unit
Supply Voltage
Differential Input Voltage
Input Voltage
Output Short Circuit Duration
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Vs
VID
V,
±22
±30
±15
Continuous
500
-25- +S5
-65 - +150
±1S
±30
±15
Continuous
500
0-+70
-65 - +150
V
V
V
Po
Topr
Tstg
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta = + 25°C, Vee = + 15V,
Characteristic
VEE
= - 15V, unless otherwise specified)
Symbol
Input Offset Voltage
V,o
Input Offset Current
1'0
Input Bias Current •.
Test Conditions
KA201A
Min
0.5
Rss50KO
NOTE 1
1.5
NOTE 1
Is
2.0
Av
Average Temperature
Coefficient of Input
Offset Voltage
I::,V,oII::,T
Average Temperature
Coefficient of Input
Offset Current
I::, hoI I::, T
Input Voltage Range
VIeR
60
75
Vee= ± 15V,
Vo= ± 10V
NOTE 1
1.7
50
mV
10
mV
50
nA
70
nA
250
nA
3.0
3.0
25
160
V/mV
15
25
rnA
rnA
2.5
160
nA
inA
2.0
RL~2KO,
Unit
7.5
300
Vs= ± 15V
Vs= t20V, Ta=Tamax
Large Signal Voltage Gain
4.5
10
100
Vs= ±20V
Supply Current
2.0
20
40
,
2.0
Typ Max
3
NOTE 1
I'B
KA301A
Typ Max Min
V/mV
p,V/oC
3.0
15
6.0
30
25°C s Ta s Tamax
0.01
0.1
0.01
0.3 nA/oC
TaminsTas25°C
0.02
0.2
0.02
0.6 nA/oC
NOTE 1
Vs= ±20V
NOTE 1
Vs= ± 15V
NOTE 1
± 15
V
±12
V
Common-Mode Rejection
Ratio
CMRR
Rs s50KO
NOTE 1
SO
100
70
95
dB
Power Supply Rejection
Ratio
PSRR
RsS50KO
NOTE 1
SO
100
70
100
dB
V
Output Voltage Swing
Input Resistance
Your
R,
Vs= ± 15V
RL=10KO
±12 ±14
±12 ±14
RL=2.0KO
±10 ±13
±10 ±13
1.5
0.5
4.0
2.0
V
MO
NOTE 1 KA201A: -25sTas +85°C
KA301A: OsTas + 70°C
c8SAMSUNG
Electronics
264
KA201 AlKA301 A
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 2 VOLTAGE GAIN
Fig. 1 SUPPLY CURRENT
1...-_-+-_-+-_-: ---±_"""""f---:::::;;;.-f
2.5
110
80
0L-__-L__
5
7.5
~
____L__ _
10
~
_ _~_ _~
15
12.5
70
5
20
17.5
----
-
12.5
s;-
"
i/II
Vs= :t15V
\
ii
I-
~
I::)
70
:2.
~
z
1
80
2
80
iiI
a::
40
'"
15
•
I
Vs= :t15V
r\.,
w
Q
0
:Ii
0
,
~BIAS
.....
fd
a= +25°C
7.5
12.5
Fig. 4 INPUT CURRENT
r-....
1
z
10
80
"
10
.!!
- 25ic:STaS700C
7.5
Fig. 3 CURRENT LIMITING
-.....;:;:;
l.-----
SUPPLY VOLTAGE (:tV) MINIMUM
SUPPLY VOLTAGE (:tV)
15
M\"'\~
~
30
z
0
:Ii
:Ii
I
2.5 ~--
"T'
-1--_. -_.--
10
-
20
0
--
()
10
OFFSET
I
15
20
30
25
-40
a
-20
20
40
Fig. 6 COMMON MODE REJECTION
Fig. 5 POWER SUPPLY REJECTION
120
100
" "~
'\..
80
1
60
I-
Z
W
a::
a::
::)
()
"K.
'" ~
~1;'1'
20
10
iz
~
~?;..
::::::
b..
1M
20
10M
lK
10K
lOOK
FREQUENCY (Hz)
265
KA201A1KA301 A
LINEAR INTEGRATED CIRCUIT
Fig. 8.0PEN LOOP FREQUENCY RESPONSE
Fig. 7 SINGLE POLE COMPENSATION
R,
100 r---~--~~--r---+----r-
225
R,
INPUT
R,
80
180
60
1351
40
90
20
45
iii
'it
:s.
z
'i
CI
CI
:5
w
CI
~0
R,Cs
C,2:-_
R,+R2
Cs 2:30pF
>
;:z:
A.
10
100
1K
10K
100K
1M
10M
FREQUENCY (Hz)
Fig. 10 VOLTAGE FOLLOWER PULSE RESPONSE
Fig. 9 LARGE SIGNAL FREQUENCY RESPONSE
16
10
T~=kJ,~
Vs
~a=25lc
:!:15V
Vs=:!:15V-
-
12
C1=3pF
~
CI
z
itil
I
\
r----J I-- ~
\
INPUT
~
C1 =30PF'
\
\
\
i\
10K
1K
>
-
'i'..
I
I
10
20
-10
30
40
60
80
Fig. 12 OPEN LOOP FREQUENCY RESPONSr::
R,
1\
VO\JT
80
:s.
z
60
CI
~
~SE,
l\
w
CI
225
r\,
iii
'i
TWJ POLE
"'",
100
40
180
1
'-I'
>
20
Ta=2S'C
Vs= :!:1SV
t--C1 =30pF
C2=jPF
1
10
100
,lK
10K
FREQUENCY (Hz)
90
I
!i
if:
"
lOOK
I
135
~
GAI~
0
-20
c8SAMSUNG
Electronics
70
120
-VIN
R,Cs
_
C,2: _
R,+R 2
Cs =30pF
C2 =10C,
50
TIME(,.s)
R,
R,
I
SINGLE POLE
10M
Fig. 11 TWO POLE COMPENSATIOIII
+VIN
I
-
FREQUENCY (Hz)
INPUT
IOUTPUT
V
\
--- -- I't.
-8
1M
100K
-4
-6
\
.........
o
-2
0
SINGLE POLE
I
\
W
CI
I /
45
1\
1M
10M
266
KA201A1KA301A
LINEAR INTEGRATED CIRCUIT
Fig. 13 LARGE SIGNAL FREQUENCY RESPONSE
Fig. 14 VOLTAGE FOLLOWER PULSE RESPONSE
16
10
Js=1 ±11JJ
Ta=25'C
Cl =30pF
C2=300pF
\
12
\
\
>-
!!.
CI
z
j
OUTPUT
\
!
1&1
CI
~
I-"-~'
INPUT
,\
~
::>
0
I I
-10
lOOK
-
JOJLE
10
1M
20
30
FREQUENCY (Hz)
40
50
60
70
80
TIME(p.s)
120
C,
100
"'
iii
:g.
R,
z
C
INPUT
Cl
1&1
Cl
~
I
Vs = ± 15V
Ta=25'C -
I -........
80
~
225
180
"'" rv
" '\
PHASE~
60
135
~
40
0
>
\
20
c,
•
Fig. 16 OPEN LOOP FREQUENCY RESPONSE
Fig. 15 FEEDFORWARD COMPENSATION
1
FEED FORWARD
I
I
C2 = - 2xfoR2
fo = 3M Hz
90
45
~IN
"'
-20
10
100
lK
10K
lOOK
1M
10M
100M
FREQUENCY (Hz)
Fig. 18 INVERTER PULSE RESPOSE
Fig. 17 LARGE SIGNAL FREQUENCY RESPONSE
16
12
10
t~2~Jcl
\
rrrn
,
~
- --- ---
FEED FORWARD
1--- ~--
1'4
--
1
INPUT
z
I
!
1&1
\
r,\
lOOK
-2
> -4
-6
~
o
II
CI
~
0
1M
"
FREQUENCY (Hz)
c8SAMSUNG
Electronics
~
..FEE?FORfARD
J
-8
r-..
I--
I
~
CI
~
OU~PUT
--. ---1---1--i
Ta=25'C
s = ±115V -
-10
10M
10
20
30
40
50
80
70
80
TIME(p.s)
267
LINEAR INTEGRATED CIRCUIT
KA733C
DIFFERENTIAL VIDEO AMPLIFIER
14 DIP
The KA733C is a monolithic differsntial input, differential output,
wideband video amplifier.
The use of internal series-shunt feedback gives wide bandwidth with
low phase distortion and high gain stability. The KA733C offers fixed
gains 10,100,400 without extemal components, and adjustable gains from
10 to 400 by use of an external resistor.
The KA733C is intended for use as a high performance yideo and pluse
amplifier in communications, magnetic memories, displays and video
recorder systems.
14 SOP
FEATURES
• 80M Hz bandwidth
• 170KO Input resistance
• Selectable gains of 10,100,400
• No frequency compensation required
BLOCK DIAGRAM
•
GSE~:~~
ORDERING INFORMATION
G2B GAIN
12 SELECT
3
G 1A GAIN'
SELECT
OUTPUT (+)
11 G1B GAIN
SELECT
Device
Package
KA733CN
14 DIP
KA733CD
14 SOP
Operating Temperature
0- -t 70°C
7
SCHEMATIC DIAGRAM
vcco-----.---~---+----+---~------+-~
+--__
L-.-_ _ _
GAIN SELECT
~,......-_+-___*--<'}
OUTPUT
2~:>-____1--_""
VEED-------........-------4....-----.......--------'-.....----J
c8SAMSUNG
Electronics
268
LINEAR INTEGRATED CIRCUIT
KA733C
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Differential Input Voltage
Common mode input Voltage
Power Supply Voltage
Output Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
V ID
VI
Vs
±5
±6
±8
10
500
0-+70
-65- + 150
V
V
V
rnA
mW
°C
°C
10
Po
Topr
T519
ELECTRICAL CHARACTERISTICS
(VCC= +6V, V EE = -6V, Ta=25°C, unless otherwise specified)
Characteristic
Differential Voltage Gain
Gain 1 (Note 1)
Gain 2 ( " 2)
Gain 3 ( " 3)
Bandwidth
Gain 1 (
Gain 2 (
Gain 3 (
Rise Time
Gain 1 (
Gain 2 (
Gain 3 (
Propagation
Gain 1 (
Gain 2 (
Gain 3 (
"
1)
2)
3)
"
1)
"
"
" 2)
"
Test
Symbol
Figure
Delay
1)
2)
3)
Input Resistance
Gain 1 ( " 1)
Gain 2 ( " 2)
Gain 3 ( " 3)
Power Supply Rejection Ratio
Gain 2
Output Offset Voltage
Gain 1
Gain 2 and 3
Input Capacitance
c8SAMSUNG
Electronics
Max
Unit
250
80
8
400
100
10
600
120
12
V/V
RL = 2KO, Voul = 3V p.p
2
BW
Rs= 500
2
tr
Rs= 500
VOUT = 1Vp.p
10.5
4.5
2.5
12
ns
2
t pd
Rs= 500
VOUT = 1Vp.p
6.0
6.0
3.6
10
ns
3
Ri
Voo:::;;1V
Input Offset Current
Input Voltage Range
Typ
Av
Input Bias Current
Common Mode Rejection Ratio
Gain 2
Gain 2
Min
1
3)
"
"
"
Test Conditions
40
60
80
10
MHz
4.0
30
170
KO
ho
0.4
5
p,A
hs
9
30
p,A
1
VICR
±1
4
CMRR
VCM = ± 1V, f:::;; 100KHz
VCM = ±1V, f=5MHz
60
86
95
dB
dB
1
PSRR
L, Vs=
50
86
dB
1
Voo
RL=oo
0.6
0.35
Gain 2
2.0
±0.5V
V
1.5
1.5
V
V
pF
269
I
KA733C
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTIC
(Continued)
Test
Figure
Symbol
Output Common Mode Voltage
1
VOCM
Output Voltage Swing
1
VauT
Characteristic
Output Sink Current
Power Supply Current
Min
Typ
Max
Unit
RL=oo
2.4
2.9
3.4
V
RL=2Kn
3.0
4.0
V
2.5
3.6
mA
Test Conditions
Isink
1
Output Resistance
Is
RL=OO
18
24
20
Ro
mA
n
ELECTRICAL CHARACTERISTICS
The following specifications apply over the range of 0°C::sTa::s70°C Vcc= +6V, V EE = -6V
Characteristic
Differential Voltage Gain
Gain 1 (Note 1)
Gain 2 (Note 2)
Gain 3 (Note 3)
Test
Figure
Symbol
1
Av
Test Conditions
RL=2Kn
Vout = 3V p.p
Min
250
80
80
Typ
Max
Unit
600
120
12
VIV
Input Bias Current
lis
40
fJ.A
Input Offset Current
110
6.0
fJ.A
Input Voltage Range
1
VICR
±1.0
V
Input Impedance (Gain 2)
3
Ri
8.0
Kn
Common Mode Rejection Ratio
Gain 2 (Note 2)
4
CMRR
VCM = ± 1V, f::s100KHz
50
dB
Power Supply Rejection Ratio
Gain 2 (Note 2)
1
PSRR
L.Vcc= ±O.5V
L.V EE = ±O.5V
50
dB
1
Vao
1
Vap
2.8
V
Isink
2.5
mA
Output Offset Voltage
Gain 1 (Note 1)
Gain 2 and Gain 3 (Note 2, 3)
Output Voltage Swing
Output Sink Current
Power Supply Current
Is
1.5
1.5
27
V
mA
Notes 1. Gain select pins G1A and G1S connected together.
2. Gain select pins G2A and G2S connected together.
3. All gain select pins open.
c8SAMSUNG
Electronics
270
KA733C
LINEAR INTEGRATED CIRCUIT
PARAMETER MEASUREMENT INFORMATION
TEST CIRCUITS
VOD
2Kn
1KQ
Fig. 1
Fig. 2
50Q
VOD
O.2p,F
2KQ
VIC
1Kn
Fig. 4
Fig. 3
2B? 1Bcr--J
VOD
2Kn
VOLTAGE AMPLIFICATION ADJUSMENT
Fig. 5
c8SAMSUNG
Electronics
Fig. 6
271
•
KA733C
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 7 PHASE SHIFT VI FREQUENCY
~
-5
"
"-"",
~
GAIN 2
V.= :l:8V_
Ta=25·C
~~
~
1a- 100
II!ell
l-l50
t:
I'
%
II)
" '"
-20
VI FREQUENCY
-.. ~1'"
-50
..... ~
-25
Fig. 8 PHASE SHIFT
-200
1\
~\
\\~
~n
~ -250
110.
~
i:~:5~6-
~'Gi'li
-300
I\~I~~
GAIN 1
-350
o
5
8
7
10
10
FREQUENCY (MHz)
Fig. 9 VOLTAGE GAIN VI FREQUENCY
50
100
FREQUENCY (MHz)
1000
Fig. 10 PULSE RESPONSE
1.6
60
1.4
50
GAIN 1
ii'
"""",,
l!.
z
:iii!
40
GAIN 2
ell
1.2
"'"
1&1
~
30
~
Q
1&1
Q
20
~
GAIN 3
Z
"~
1&1
~
ell
Z
10
ili
~
Vs= :l:8V
Ta=25·C
1&1
~
lN3
1.0
II"'"
I J"
Gi
0.8
GAIN2
~ 0.6
II
:::>
~~
~
110.
I-
0.4
0
0.2
i:::5~6-
/GAINl
I-
R,=lKO
IV
:::>
})
-0.2
~
10
50
100
FREQUENCY (MHz)
500
-0.4
-15 -10
1000
-5
0
10
15
20
25
30
35
TIME (ns)
Fig. 9
Fig. 11 PULSE RESPONSE VI SUPPLY VOLTAGE
1.6
I
I
1.4
1.2
~
~
V......
0.8
II J
0.6
i
~ 0.4
-10 -5
c8SAMSUNG
Electronics
20
25
~
0.6
110.
I-
~~=7~~Ta=85.CTa=25°C
,
0.4
J
:::>
0
~i'=lKI-
Ta=O·C
1.0
0.8
:::>
1
1
10
15
TIME (nl)
I
25OC
I~ -1
I-
I
GAIN 2
Ta=25·CR,=lK11
V
GAIN 2 Vs= :l:6V
ell
~
1
-0.2
-0.4
-15
1&1
Vs= :l:3V
IV
o 0.2
~
s =:l:1 6V
Jf
!;
I r
1.4
1.2
Vs= :l:8V
~ 1.0
III
Fig. 12 PULSE RESPONSE VI TEMPERATURE
1.6
0.2
-0.2
30
35
-0.4
-15 -10
-5
5
10
15
TIME (n.)
25
30
35
272
KA733C
LINEAR INTEGRATED CIRCUIT
Fig. 13 COMMON MODE REJECTION RATIO
VI FREQUENCY
Fig. 14 OUTPUT VOLTAGE SWING VI FREQUENCY
100
II
90
Q
II
,.....,.
iii
~
80
i""o
Q
~
2
u
80
::::I
50
w
Q
0
:I
40
~:~:S~~-
1'1"-
0
Vs= ±6V
5.0
Ta=2S'~-
RL =lKO
CI
~
...... ~
w
4.0
~
CI
c
i'o..
!:i
0
3.0
>
to-
ito-
30
0
:I
:I
~
z
Z
z
6.0
GAIN 2
r-.....
70
Z
UI
a:
7.0
::::I
"
2.0
0
20
1.0
U
1\
\
10
o
lOOK
10K
1M
10M
10
1
100M
FREQUENCY (Hz)
50
500
100
Fig. 15 DIFFERENTIAL OVERDRIVE RECOVERY TIME
1.4
Tl=25
1.3
.
.s.
/v
60
50
>
Vs= ±6V
Ta=2S'C
40 I--GAIN 2
:IE
i=
iii>
V
0
fd
a:
w
~
a:
Q
iii>
30
;C
10
w 1.0
~
0
0.9
>
w
~
~
a:
0.8
./
o
20
40
60
80
100
120
140
160
180
SUPPLY VOLTAGE (±y)
Fig. 18 GAIN VI FREQUENCY VI SUPPLY VOLTAGE
50
iii
I
~~~:S~~~
5.0
;C
GAIN2 Ta=2S'C
40
w
CI
4.0
~
:/
)
1.0
50
100
fil
ffi
20
~
10
\\
Q
V
CI
\
z
iii
V
I-~
10
'\ \
>
V
2.0
0
"IIii\
30
0
3.0
to-
i
~
Z
CI
>
to-
V
60
w
::::I
/v
LV
200
CI
~
-
0.4
6.0
0
y
)..-'r--- V
.... I - ~
GAIV
0.5
7.0
~
~~
0.7
0.6
Fig. 17 OUTPUT VOLTAGE SWING
VI LOAD RESISTANCE
~
z
./.
CI
DIFFERENTIAL INPUT VOLTAGE (my)
5
... V
1.1
CI
1c
./
1.2
Z
V
0
o
V
V
/
20
I/
I
Fig. 16 VOLTAGE GAIN VI SUPPLY VOLTAGE
70
w
1000
FREQUENCY (MHz)
200
500
lK
c8SAMSUNG
Electronics
SK
10K
-III
V
VrlY
-10
LOAD RESISTANCE (0)
Vs.=.±.8VVs= ±6V
10
100
500 1000
FREQUENCY (MHz)
273
KA733C
LINEAR INTEGRATED CIRCUIT
Fig. 20 SUPPLY CURRENT vs SUPPLY VOLTAGE
Fig. 19 SUPPLY CURRENT vs TEMPERATURE
28
21
I I
Ta=25'C20
~
24
0
i
//
18
::>
1/1
/V'
.§.
1/1
V
/
V
16
12
//
15
/V'
14
8
-60
-20
60
20
100
140
3
SUPPLY VOLTAGE (±VJ
TEMPERATURE (OC)
Fig. 21 VOLTAGE GAIN vs RADJ
Fig. 22 VOLTAGE GAIN ADJUST CIRCUIT
1000
\..
"
100
i!::5~6-
"I'
I
r\.
'"
I'-
,
i'. ~ ..
10
10
100
1K
""~10K
Rad) (n)
c8SAMSUNG
Electronics
274
KA9256
LINEAR INTERGRATED CIRCUIT
DUAL POWER OPERATIONAL AMPLIFIER
10 SIP
The KA9256 is a dual power operational amplifier and it is output
maximum current is 1.0A (Vs = ± 15V). It can be used in arm driver for
player, driver for brush motors forward and reverse rotation control and CD
output driver for hole motor.
FEATURES
•
•
•
•
=
Internal current limiting: los 350mA (Rse
High output current: 10 SOOmA max
10 SIP HIS package
Intemal phase compensated
=
=2.20)
BLOCK DIAGRAM
ORDERING INFORMATION
Operating Temperature
w
;::
a5
0
C/l
C/l
>
;:)
I
+
~
~
~
I
N
~
N
0
a5C/l
;:)
N
~
w
C/l
>
~ :J
~
SCHEMATIC DIAGRAM
SENSE
~-----~~~~-~----~-----~----~~Vcc
IN(-)
IN( +) O---+----+-.....J
t-----+--t-f
~------+---~>--<>OUTPUT
L-~-~----~~-+-~~>---~--4-~----~----~-oVEE
TO OTHER HALF
c8~SUNG
275
•
LINEAR INTERGRATED CIRCUIT
KA9256
ABSOLUTE MAXIMUM RATINGS
Characteristics
Symbol
Value
Unit
Supply Voltage
Output Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Vs
±18
1.0
12.5
-20- + 70
-65 -+ 150
V
A
W
°C
°C
10
PD
Topr
Tstg
ELECTRICAL CHARACTERISTICS
(Vee = +15V, VEE = -15V, Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
mV
Input Offset Voltage
VIO
2
6
Input Offset Current
110
10
200
nA
Input Bias Current
he
100
700
nA
10
20
rnA
Supply Current
Is
± 12
± 13
V
100
dB
VieR
±12
± 14
V
Common Mode Rejection Ratio
CMRR
70
90
dB
Power Supply Rejection Ratio
Output Voltage Swing
VOUT
Large Signal Voltage Gain
RL = 330
Av
Input Voltage Range
PSRR
50
Bandwidth
BW
1.0
150
MHz
Slew Rate
SR
Av = 1, RL = 330, R = 100, C = 0.1/-tF
0.15
V//-ts
INN
Limiting Current
los
Rse = 2.20
0.35
A
Cross Talk
CT
RL = 330, Vo = 1Vp.p
60
dB
c8SAMSUNG
Electronics
276
LINEAR INTEGRATED CIRCUIT
KF347C/AC
QUAD JFET INPUT OPERATIONAL
AMPLIFIERS
14 DIP
The KF347 is a high speed quad JFET input operational amplifiers. This feature high impedance, wide bandwidth, high slew rate, and low input offset and bias
currents. The KF347 may be used in circuits requiring
high input impedance, high slew rate and wide bandwidth, low input bias current.
FEATURES
•
•
•
•
Low input bias
High input impedance
Wide bandwidth: 4 MHz (Typ)
High slew rate: 13 V/p.s (Typ)
BLOCK DIAGRAM
ORDERING INFORMATION
SCH EMATIC DIAG RAM
Device
Package
Operating Temperature
KF347CN
KF347ACN
14 DIP
0- +70°C
(One Section Only)
. .<)
L - - -.......- - - G
c8SAMSUNG
Electronics
.
vee
OUTPUT
277
I
LINEAR INTEGRATED CIRCUIT
KF347C/AC
ABSOLUTE MAXIMUM RATINGS
Characteristics
Symbol
Value
Unit
Power Supply Voltage
Differential Input Voltage
Input Voltage Range
Output Short Circuit Duration
Power Dissipation
Operating Temperature Range KF347C/AC
Storage Temperature Range
Vs
VIP
VI
±18
±30
±15
Continuous
570
0-+70
-65 -+150
V
V
V
Po
, Topr
Tstg
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(Vec= +15V, VEE = -15V, Ta=25°C, unless otherwise specified)
Characteristic
Input Offset Voltage
Input Offset Voltage Drift
Symbol
VIO
Rs =10KO
Input Bias Current
liB
3
NOTE1
Av
VOUT
Min
5
RL =10KO
VICR
10
100
25
100
50
200
8
25
15
100
4
200
100
±13.5
± 11
+15
-12
pA
pA
V/mV
15
±12
mV
p.V/*C
10
8
50
Unit
Max
13
4
50
I NOTE1
Typ
5
10
I NOTE1
RL =2KO
KF347C
Max
7
I NOTE1
Vo= ± 10V
Input Voltage Range
Typ
25
110
Output Voltage Swing
I
KF347A
Min
!::.Vlol!::.T Rs =10KO
Input Offset Current
Large Signal Voltage Gain
Test Conditions
±12
±13.5
V
± 11
+15
-12
V
Common-Mode Rejection Ratio
CMRR
Rs~10KO
80
100
80
100
dB
Power Supply Rejection Ratio
PSRR
Rs~10KO
80
100
80
100
dB
RI
1012
1012
Is
7.2
SR
13
13
V/p.S
4
4
MHz
Input Resistance
Supply Current
Slew Rate
Gain Bandwidth Product
GBW
Channel Seperation
CS
f= 1Hz-20KHz
(input referenced)
Equivalent Input Noise
Voltage
eN
Rs=1000
f=1KHz
Equivalent Input Noise
Current
iN
f=1KHz
0
7.2
11
11
rnA
120
120
dB
20
20
InV/v'Rz
0.01
0.01
pAlv'Rz
NOTE 1. KF347C/AC: O~Ta~ + 70°C
c8~SUNG
278
KF351
LINEAR INTEGRATED CIRCUIT
SINGLE OPERATIONAL AMPLIFIER
a DIP
The KF351 is JFET input operational amplifier with an internally compensated input offset voltage. The JFET input device provides wide
bandwidth, low input bias currents and offset currents.
FEATURES
•
•
•
•
•
Internally trimmed offset voltage: 10mV
Low input bias current: 50pA
Wide gain bandwidth: 4MHz
High slew rate: 13V/p.s
High input impedance: 10120
a SOP
I
BLOCK DIAGRAM
OFFSET
NULL
VEE
8
4
NC
5 OFFSET
NULL
ORDERING INFORMATION
Device
Package
KF351N
8 DIP
KF351D
8 SOP
Operating Temperature
0- + 70°C
SCHEMATIC DIAGRAM
r--------
0
I
:t-
zz
o +
Z
~en '"
~
>
'":::>
I
I-
C\I
0
~
+85°G
9 SIP
KS272AIS
>
70°C
9 SIP
KS272ACS
SCHEMATIC DIAGRAM
I
8 DIP
KS272ACN
BLOCK DIAGRAM
Operating Temperature
0
0
>
VDDo-~~------~------------------__------------------__- - - - - -
M9
IN( -)
0---1
~-o
IN(+)
OUTPUT
M10
M15
M7
02
VsSIGND
Rz
c8SAMSUNG
Electronics
Cc
285
PRELIMINARY
KS272C/AC, KS2721/AI
CMOS INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
Characteristic
Symbol
Supply Voltage
Differential Input Voltage
Input Voltage
Duration of Short Circuit (Note 1)
Power Dissipation
Operating Temperature Range KS272C/AC
KS272I1AI
Storage Temperature
Voo
VIO
VI
Value
Unit
18
18
- 0.3 - + 18
unlimited
500
0-+70
-25 - +85
-65 - + 150
Po
Topr
Tstg
(Note 1) The output may be shorted to ground or either supply, for
that the dissipation rating is not exceeded.
Voo~14V.
V
V
V
mW
°C
°C
Care must be taken to insure
ELECTRICAL CHARACTERISTICS
(Voo = 10V, Ta= 25°C, unless otherwise specified)
Symbol
Characteristic
Test Conditions
KS272C/KS2721
Min
Typ
Vo= 1.4V
Input Offset Voltage
VIO
Input Offset Current
110
Input Bias Current
lis
Common-Mode
Input Voltage Range
VICR
Output Voltage Swing
VOUT
Large Signal Voltage Gain
Av
Rs= 500
I NOTE2
Min
5
12
12
1
100
1
-0.2
to 9
-0.2
to 9
8
7.8
[ NOTE2
77.5
80
Vo= 1 to 6V
150
150
[ NOTE2
Max
10
1
[ NOTE2
VID = 100mV
Typ
100
[ NOTE2
Vlc =5V
Vo=5V
KS272AC/KS272AI
1
Vlc =5V
Vo=5V
Max
8.6
8
8.6
80
pA
pA
V
7.8
92
mV
V
92
-,-------
Rs = 500
Unit
77.5
dB
Common-Mode
Rejection Ratio
CMRR
Vo=1.4V
VIC = VICR min
70
88
70
88
dB
Power Supply Rejection
Ratio
PSRR
Voo = 5 to 10V
Vo=1.4V
65
82
65
82
dB
Isource
Vo=OV
VIO = 100mV
Isink
Output Current
Supply Current
(each amplifier)
100
-55
-55
V;= Voo
VID = -100mV
15
15
No load, VIC = 5V
1
Vo=5V
rnA
I NOTE2
2
1
2
2.2
2.2
mA
Unity Gain Bandwidth
BW
Av = 40dB, CL= 10pF
Rs = 500
4.5
4.5
MHz
Slew Rate
SR
Unity Gain
RL~2KO, CL= 100pF
2.3
2.3
V//J-s
CS
Av = 100
120
120
dB
Channel Seperation
NOTE 1. KS272C/AC:
2. KS272I1AI: -
O~Ta~
+ 70°C
25~Ta~ + 85°C
c8SAMSUNG
Electronics
286
PRELIMINARY
KS272C/AC, KS2721/AI
CMOS INTEGRATED CIRCUIT
TYPICAL APPLICATION INFORMATION
Latch Up Avoidance
Junction-isolated CMOS circuits employ configurations which produce a parasitic 4-layer (p-Il-p-n) structure that
can function as an SCR, and under certain conditions may be triggered into a low impedance state, resulting in
excessive supply current. To avoid such conditions, no voJtage greater than O.3V beyond the supply rails may be
applied any pin. In general, the OP amp supplies should be established simultaneously with, or before any input
signals are applied.
Output Stage Considerations
The amplifier's output stage consists of a source-follower connected pull up transistor and an open-drain pulldown transistor. The high-level output voltage (VOH) is virtually independent of the IDD selection, and increases with
higher values of Voo and reduced output loading. The low-level output voltage (VOL) decreases with reduced output current and higher input common-mode voltage. With no load, VOL is essentially equal to the GND pin potential.
Circuit Layout Precaustions
The user is caustioned that, due to extremely high input impedance, care must be exercised in layout, construction board cleanliness, and supply filtering to avoid hum and noise pick up.
TYPICAL APPLICATIONS
+5
">---_--.--·n VOUT
VOUT
~--_----TOCMOSOR
LPTTL LOGIC
1M
Fig. 2
Fig. 1
Pulse Generator
AC Coupled Non-Inverting Amplifier
R1
R2
R1
OJ)
AV=1+~
R1
V
2Vp.p
Av=11
Fig. 3
c8 ~l!"SUNG
Fig. 4
287
•
PRELIMINARY
CMOS INTEGRATED CIRCUIT
KS272C/AC, KS27211AI
TYPICAL APPLICATION
Bi·Quad Filter
R
C
Q=~
C1
VIN
100KO
o---t I-------¥ltt-l...-....I
where
AVCF == Center frequency gain
AVBN == Bandpass notch gain
R1
R2 = TBP
R3=TNR2
C1=10C
Example: 10 1000Hz
BW=100Hz
AVCF=1
AVBN=1
R==160KO
R1 =1.6MO
R2=1.6MO
R3= 1.6MO
C==O.o1,.F
1
fo 211"RC
R1 =QR
=
=
R2
Fig. 5
c8SAMSUNG
Electronics
288
PRELIMINARY
KS274C/AC, KS2741/AI
CMOS INTEGRATED CIRCUIT
QUAD CMOS OPERATIONAL
AMPLIFIER
14 DIP
The KS274 is a CMOS operational amplifier designed
to operate with single or dual supplies.
This device has extremely high input impedance, low
input bias and offset current.
Application areas include translucer amplifier, ampli·
fier blocks, active filters, signal buffers, and all the con·
ventional OP Amp circuits which can be easily
implemented in single power supply systems.
FEATURES
• Wide operating voltage range; 3V to 16V or
or ± 1.5V to ± BV
• High Input Impedance: 10120
• Very low input bias current
• Common-mode input voltage range includes the
negative rail
• Single-supply voltage operation_
BLOCK DIAGRAM
I
ORDERING INFORMATION
Device
Package
KS274CN
KS274ACN
KS2741N
Operating Temperature
14 DIP
0-
14 DIP
KS274AIN
- 25 -
+ 70°C
+ 85°C
SCHEMATIC DIAGRAM (One Section Only)
M13
M9
IN(-to-l
M1
OUTPUT
M10
M11
M7
M5
02
R4
I
Vss/GNO
Rz
c8SAMSUNG
Electronics
~
cc
289
PRELIMINARY
KS274C/AC, KS2741/AI
CMOS INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
Characteristic
Symbol
Value
Unit
Supply Voltage
Differential Input Voltage
Input Voltage
Duration of Short Circuit (Note 1)
Power Dissipation
Operating Temperature Range KS274C/AC
KS27411AI
Storage Temperature
Voo
VIO
VI
18
18
- 0.3' + 18
unlimited
570
V
V
V
Po
mW
o ~+70
Topr
°C
-25 ~ +85
-65 - + 150
Tstg
°C
(Note 1) The output may be shorted to ground or either supply, for Voo::S; 14V. Care must be taken to insure
that the dissipation rating is not exceeded.
ELECTRICAL CHARACTERISTICS
(Voo = 10V, Ta = 25°C, unless otherwise specified)
Characteristic
Symbol
Test Conditions
KS274C/KS2741
Min
Input Offset Voltage
Input Offset Current
Input Bias Current
Common-M~de
Input Voltage Range
Output Voltage Swing
Large Signal Voltage Gain
Typ
Vo=1.4V
VIO
ho
lis
Rs = 50n
I NOTE2
Av
5
12
1
8
Vo = 1 to 6V
Rs = 50n
80
I NOTE2
pA
pA
150
-0.2
to 9
8.6
8
7.8
V
8.6
V
7.8
92
80
92
dB
77.5
77.5
mV
100
1
-0.2
to 9
I NOTE2
Unit
Max
12
150
I NOTE2
V ID = 100mV
Typ
10
1
VICR
VOUT
Min
100
I NOTE2
Vlc =5V
Vo=5V
KS27 4AC/KS27 4AI
1
Vlc =5V
Vo=5V
Max
Common-Mode
Rejection Ratio
CMRR
Vo = 1.4V
VIC = VICR min
70
88
70
88
dB
Power Supply Rejection
Ratio
PSRR
Voo= 5 to 10V
Vo=1.4V
65
82
65
82
dB
Isource
Vo=OV
V IO = 100mV
ISink
Output Current
Supply Current
(each amplifier)
100
-55
-55
Vo= Voo
VIO = -100mV
15
15
No load, VIC = 5V
1
Vo=5V
mA
2
1
2.2
I NOTE2
2
2.2
mA
Unity Gain Bandwidth
BW
A v =40dB, CL= 10pF
Rs= 50n
2.3
2.3
MHz
Slew Rate
SR
Unity Gain
RL~2Kn, C L=100pF
4.5
4.5
V/p.s
Channel Seperation
CS
Av = 100
120
120
dB
NOTE 1. KS274C/AC: O::s;Ta::s; + 70°C
2. KS27411AI: - 25::s;Ta::s; + 85°C
c8!!~~SUNG
290
PRELIMINARY
KS274C/AC, KS2741/AI
CMOS INTEGRATED CIRCUIT
TYPICAL APPLICATION INFORMATION
Latch Up Avoidance
Junction-isolated CMOS circuits employ configurations which produce a parasitic 4-layer (p-n-p-n) structure that
can function as an SCR, and under certain conditions may be triggered into a low impedance state, resulting in
excessive supply current. To avoid such conditions, no voltage greater than O.3V beyond the supply rails may be
applied any pin. In general, the OP amp supplies should be established simultaneously with, or before any input
signals are applied.
Output Stage Considerations
The amplifier's output stage consists of a source-follower connected pull up transistor and an open-drain pulldown transistor. The high-level output voltage (V OH) is virtually independent of the 100 selection, and increases with
higher values of Voo and reduced output loading. The low-level output voltage (VOL) decreases with reduced output current and higher input common-mode voltage. With no load, VOL is essentially equal to the GND pin potential.
Circuit Layout Precautions
The user is cautioned that, due to extremely high input impedance, care must be exercised in layout, construction board cleanliness, and supply filtering to avoid hum and noise pick up.
TYPICAL APPLICATIONS
+5
>-___.-_-0
VOUT
VOUT
>---~----TOCMOSOR
LPTTL LOGIC
Fig. 1
Fig. 2
AC Coupled Non-Inverting Amplifier
R1
Pulse Generator
R2
R1
Co
F
VOUT
VOUT
RL
00
AV=1+~
V
2 V p•p
R1
Av=11
Fig. 3
c8SAMSUNG
Electronics
Fig. 4
291
•
PRELIMINARY
KS274C/AC, KS2741/AI
CMOS INTEGRATED CIRCUIT
TYPICAL APPLICATION INFORMATION
Bi-Quad Filter
R
Q=:~
where
AVCF = Center frequency gain
AVBN = Bandpass notch gain
fo=_12?1"RC
R1 =QR
R2=~
TBP
R3=TNR2
C1=10C
Example: fo = 1000Hz
BW= 100Hz
AVCF= 1
AVBN = 1
R=160KO
R1 =1.6MO
R2=1.6MO
R3=1.6MO
C=O.01/LF
Fig. 5
c8SAMSUNG
Electronics
292
LM224/A, LrJl324/A, LM2902
LINEAR INTEGRATED CIRCUIT
,----
QUAD OPERATIONAL AMPLIFIERS
The LM224 series consists of four independent, high gain, internally
frequency compensated operational amplifiers which were designed
specifically to operate from a single power supply over a wide voltage
range.
Operation from split power supplies is also possible so long as the
difference between the two supplies is 3 volts to 32 volts.
voltage.
Application areas include transducer amplifier, DC gain blocks and all
the conventional OP amp circuits which now can be easily implemented
in single power supply systems.
I
-
--
-----------,
--
14 DIP
14 SOP
FEATURES
• Internally frequency compensated for unity gain
• Large DC voltage gain: 100dB
• Wide power supply range: LM224/A, LM324/A: 3V - 32V (or ± 1.5V - 16V)
LM2902: 3V - 26V (or ± 1.5V - 13V)
• Input common-mode voltage range includes ground
• Large output voltage swing: OV DC to Vcc·1.5V DC
• Power drain suitable for battery operation.
ORDERING INFORMATION
BLOCK DIAGRAM
OUT1
Device
Package
LM324N
LM324AN
14 DIP
LM324D
LM324AD
14 SOP
LM224N
LM224AN
14 DIP
LM224D
LM224AD
14 SOP
Operating Temperature
OUT4
IN4 (-)
IN4 (+)
IN3 (+)
0- + 70°C
-25 - +85°C
r---
SCHEMATIC DIAGRAM (One Section Only)
LM2902N
14 DIP
LM2902D
14 SOP
-40 - + 85°C
Vcco---~~-~-----------------~-----~~-.-,
__.-----+---QOUTPUT
GND
,c8SAMSUNG
Electronics
293
•
LM224/A, LM324/A, LM2902
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
LM224/LM224A
LM324/LM324A
LM2902
Unit
Power Supply Voltage
Differential Input Voltage
Input Voltage
Output Short Circuit to GND
Vee::::;; 15V Ta = 25"C (One Amp)
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Vs
V ID
VI
± 18 or 32
32
-0.3 to +32
±180r32
32
-0.3 to +32
± 13 or 26
26
-0.3 to + 26
V
V
V
Continuous
Continuous
Continuous
PD
Topr
T stg
~
570
-25 - +85
-65-= + 150
570
0- + 70
-65= +150
mW
"C
°C
570
-40- +85
-65 + 150
=-
ELECTRICAL CHARACTERISTICS
(Vee = 5.0V, VEE = GND, Ta = 25°C, unless otherwise specified)
Symbol
Test Conditions
Input Offset Voltage
VIO
VleM = OV to Vee - 1.5V
Vo=1.4V, Rs=OO
Input Offset Current
Input Bias Current
Characteristic
Min Typ Max Min Typ Max Min Typ Max
1.5 7.0
mV
Ito
(2.0
30
3.0
3.0
liB
:zto
150
40 250
Supply Current
lee
Vee = 30V
(Vee = 26V for LM2902)
1.0
3
RL=oo, Vee=5V (all Amps)
0.7
1.2
0.7
1.2
Vee = 15V, RL~2KO
Vo= 1V to 11V
50 100
TRL= 2KO 26
Vee = 30V
Vee = 26V for 29021R L= 10KO 27
5
70
Power Supply
Rejection Ratio
PSRR
65 100
CS
f = 1KHz to 20KHz
20
85
40
los
20
3
mA
75
40
mA
Vim V
V
24
5
V
100
mV
75
dB
50 100
dB
50
120
60
V
0.7 1.2
23
65 100
120
Vee
-1.5
22
28
5
65
nA
100
26
27
nA
1.0
25 100
28
50
40 250
0
3
CMRR
120
60
40
dB
60
mA
V in + =1V, Vin - =OV
Vee = 15V, Va = 2V
20
40
20
40
20
40
mA
Vin + =OV, Vin - = 1V
Vee = 15V, Va = 2V
10
13
10
13
10
13
mA
V in + =OV, Vin - = 1V
Vee = 15V, Va = 200mV
12
45
12
45
Isource
Output Current
ISink
Differential Input
Voltage
Vee
-1.5
1.0
Common-Mode
Rejection Ratio
Short Circuit to GND
0
50
RL=oo, Vee=30V (all Amps)
(Vee = 26V for LM2902)
Av
VOH
VOL
Vee
-1.5
0
V ee =5V, RL>10KO
Channel Separation
Unit
1.5 7.0
VieR
Output Voltage Swing
LM2902
LM324
1.5 5.0
Input Common-Mode
Voltage Range
Large Signal
Voltage Gain
LM224
V ID
c8SAMSUNG
Electronics
Vee
f.lA
Vee
Vee
V
294
I
j
)
LM224/A, LM324/A, LM2902
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Vee = 5.0V, VEE = GND, unless otherwise specified)
The following specification apply over the range of - 25°C5Ta5
for the LM324; and the - 40°C:5:Ta5 + 85°C for the LM2902
Characteristic
Symbol
Input Offset Voltage
VIO
Test Conditions
+ 85°C for the LM224; and the 0°C5Ta5 + 70°C
LM224
V,eM = OV to Vee -1.5V
Vo = 1.4V, Rs = on
1'0
Input Offset Current
Drift
61d6T
Input Bias Current
VieR
Large Signal Voltage
Gain
Output Voltage Swing
10.0
7.0
10
200
10
500
nA
Vee
-2.0
V
0
Av
Vee = 15V, RL~2.0Kn
Vo= 1V to 11V
25
15
15
V/mV
IRL= 2Kn 26
Vee = 30V
Vee = 26V for 2902 RL = 10Kn 27
26
22
V
V OH
28
VOL
Vee = 5V, RL~ 10Kn
5
Isource
Vin + = 1V, V in - = OV
Vee = 15V, Vo=2V
10
20
10
20
10
20
mA
Isink
V in + = OV, V in - = 1V
Vee = 15V, Vo = 2V
10
13
5
8
5
8
mA
1
V,o
c8SAMSUNG
Electronics
Vee
-2.0
0
27
20
Vee
Vee
-2.0
nA
pA/oC
10
500
300
mV
INloC
7.0
150
100
Unit
Vee = 30V
(Vee = 26V for LM2902)
Output Current
Differential Input
Voltage
7.0
I,s
Input Common-Mode
Voltage Range
LM2902
9.0
7.0
Input Offset Voltage
6V,0/6 T
Drift
Input Offset Current
LM324
Min Typ Max Min Typ Max Min Typ Max
28
5
0
23
20
Vee
V
24
5
100
Vee
mV
V
295
a
LM224/A, LM324/A, LM2902
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Vcc= 5.0V, VEE=GND, Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Input Offset Voltage
Via
Input Offset Current
110
Input Bias Current
hs
Input Common-Mode
Voltage Range
Supply Current (All Amps)
Large Signal Voltage Gain
Output Voltage Swing
VICR
lee
Test Conditions
Min Typ Max Min Typ Max
V1CM =OV to Vcc -1.5V
Vo= 1.4V, Rs=O
1.0
3.0
1.5
2
15
40
80
Vce
-1.5
0
Vee = 30V
LM324A
LM224A
Unit
3.0
mV
3.0
30
nA
40
100
nA
Vce
-1.5
V
0
RL=
, Vee = 30V
1.5
3
1.5
3
rnA
RL=
, Vee=5V
0.7
1.2
0.7
1.2
rnA
Av
Vee = 15V, RL~2KQ
Va = 1V to 11V
VOH
Vee = 30V
Vee = 26V for 2902
VOL
Vce =5V,
100
25
27
28
27
28
50
I RL= 2KQ
I RL = 10KQ
26
RL~10KQ
100
VIm V
26
5
20
V
5
V
20
mV
Common-Mode Rejection Ratio
CMRR
70
85
65
85
dB
Power Supply Rejection Ratio
PSRR
65
100
65
100
dB
Channel Separation
CS
Short Circuit to GND
los
Isource
Output Current
ISink
Differential Input Voltage
V ID
c8SAMSUNG
Electronics
120
f = 1KHz to 20KHz
40
dB
120
40
60
60
rnA
Vin+ = 1V, Vin - = OV
Vce = 15V
20
40
20
40
rnA
Vin + = OV, Vin - = 1V
Vee = 15V, Vo= 2V
10
20
10
20
rnA
Vin + = OV, Vin - = 1V
Vee = 15V, Va = 200mV
12
50
12
50
!J.A
Vee
Vee
V
296
LINEAR INTEGRATED CIRCUIT
LM224/A, LM324/A, LM2902
ELECTRICAL CHARACTERISTICS
(Vee=5.0V, VEE=GND, unless otherwise specified)
The following specification apply over the range of - 25°C,!S;Ta,!S; + 85°C for the LM224A; and the O°C,!S;Ta,!S; + 70°C
for the LM324A
Characteristic
Symbol
Min
Input Offset Voltage
Input Offset Voltage Drift
V IO
Typ
V ICM = OV to V cc - 1 .5V
Vo = 1.4 V Rs = on
Max
Min
Typ
4.0
7.0
6V 10/6T
Input Offset Current
Input Offset Current Drift
I
LM324A
LM224A
Test Conditions
110
7.0
20
30
Unit
Max
5.0
mV
30
p.V/oC
75
nA
6110/6T
10
200
10
300
pA/oC
liB
40
100
40
200
nA
Vee
-2.0
V
Input Bias Current
Input Common-Mode
Voltage Range
Vee
-2.0
VieR
Vee = 30V
0
Av
Vee = 15V RL~2.0Kn
25
15
V OH
VOL
Vee = 30V ~I
1
60
"~
i:j
50
>
0
!!.
""--.
w
~
0
:::l
0..
~
~
~
Vee= +30'1
"1--- - ... --
__~:5~
40
I-
l-
'"""- .......
--.---L--.---
I-
1---
-
Vee = +5V
30
20
10
-25
-50
25
POWER SUPPLY VOLTAGE (:!:Voc)
75
50
100
•
TEMPERATURE (OC)
Fig. 3 SUPPLY CURRENT
Fig. 4 VOLTAGE GAIN
160
120
Oi'
g
-...........
/"
Gi
~
I-
RL =20K!l
,......-
r:::;:
Z
Z
w
:::l
UI
40
o
o
SUPPLY VOLTAGE
15
7.5
M
30
22.5
SUPPLY VOLTAGE
M
Fig. 6 COMMON·MODE REJECTION RATIO
Fig. 5 OPEN LOOP FREQUENCY RESPONSE
120
140
I
120
100
-
Gi
~
z
f.-"'"
0
II
~
Z
0
40
"
20
40
~
~
0
0
20
i'
10"
10'
10'
1()l
10'
FREQUENCY (Hz)
qsSAMSUNG
Electronics
10'
10"
II
o
10'
10'
10'
10'
10'
10'
FREQUENCY (Hz)
299
LM224/A, LM324/A, LM2902
LINEAR INTEGRATED CIRCUIT
Fig. 8 VOLTAGE FOLLOWER PULSE
RESPONSE (SMALL SIGNAL)
500
RL=2.0K
Vee=15V
Ta= 25°C
Vee= +30V
450
>
~
I-- ~
f1
400
IC7
INPUT
CJ
~
g
OUTPUT
I-
II
/
I--
~
1\,
!;
o
t\
~
--
350
I"
300
\: i - -
\I
20
40
30
50
TIMElJ.ts)
TIME (j.s)
Fig. 9 LARGE SIGNAL FREQUENCY RESPONSE
z
i
0
I
I-
::>
T\
Q.
I
I-
I
I'
::>
o
I
N-
10'
10'
10'
V
10-
10'
3
10-'
FREQUENCY (Hz)
10-'
10'
Fig. 11 OUTPUT CHARACTERISTICS
CURRENT SINKING
Fig. 12 CURRENT LIMITING
T
+25°C
70
I-
::>
60
.s
10'
III
I-
10'
80
Ta
~
10'
OUTPUT SOURCE CURRENT (rnA)
,
10
~
1--
1
I
CJ
....-
Tl1 ~~I~lIC
i
----
i
Fig. 10 OUTPUT CHARACTERISTICS
CURRENT SOURCING
11
I
15
i
i
275
10
+5VF
::>
0
,
vee -
+15V
~
t=
ff-
I--
10-'
40
I-
:::>
~e~~1 ~~~V\
010- 'I--
50
Q.
I-
:::>
30
~
-- --t--..
r-- r--.
T"'O
20
10
o
10'
10'
OUTPUT SINK CURRENT (rnA)
c8SAMSUNG
Electronics
10'
-50
-25
25
50
75
100
TEMPERATURE (OC)
300
LINEAR INTEGRATED CIRCUIT
LM224/A, LM324/A, LM2902
TYPICAL APPLICATIONS
(Vee=5.0V)
Fig. 13 Voltage Reference
Fig. 14 Non·lnverting DC Gain
Vee
+VIN
+5V
-- ---_
+VO
Va
VOUT
R1 1.0Mfl
10K
VIN
R1
I
Fig. 16 Pulse Generator
Fig. 15 AC Coupled Non·lnverting Amplifier
R1
R2
1Mfl
>-+---0
1
VOUT
OVOUT
RL
Vee
100Kfl
oJlJ"L
00
Av=1
+~
V
Av=11
Fig. 17 Bi·Quad Filter
R
R
C
100Kfl
_BW
- fa
where
T BP = Center frequency gain
TN Bandpass notch gain
Q
=
1
fo= 2".RC
R1=QR
R1
R2 = Tsp
R3=TNR2
C1 =10C
Example: fa = 1000Hz
BW= 100Hz
Tsp= 1
TN=1
R= 160Kfl
R1 = 1.6Mfl
R2=1.6Mfl
R3 = 1.6Mfl
C=O.01I'F
c8SAMSUNG
Electronics
301
LM248/LM348
LINEAR INTEGRATED CIRCUIT
QUAD OPERATIONAL AMPLIFIERS
The LM248/LM348 is a true quad LM741. It consists of four
independent, high-gain, internally compensated, low-power operational
amplifiers which have been designed to provide functional
characteristics identical to those of the familiar LM741 operational
amplifier. In addition the total supply current for all four amplifiers is
comparable to the supply current of a single LM741 type OP Amp.
Other features include input offset currents and input bias current which
are much less than those of a standard LM741. Also, excellent isolation
between amplifiers has been achieved by independently biasing each
amplifier and using layout techniques which minimize thermal coupling.
14 DIP
14 sOP
FEATURES
•
•
•
•
•
•
•
•
•
•
LM741 OP Amp operating characteristics
Low supply current drain
Class AB output stage·no crossover distortion
Pin compatible with the LM324 & MC3403
Low input offset voltage·1mV Typ.
Low input offset current·4nA Typ.
Low input bias current·30nA Typ.
Gain bandwidth product for LM348 (unity gain)·1.0MHz Typ.
High degree of isolation between amplifiers·120dB
Overload protection for inputs and outputs
BLOCK DIAGRAM
SCHEMATIC DIAGRAM
ORDERING INFORMATION
Device
Package
LM348N
14 DIP
LM348D
14 SOP
LM248N
14 DIP
LM248D
14 SOP
Operating Temperature
-
--
0- + 70°C
-25 - +85°C
(One Section Only)
---------~~-~vcc
IN (-) 0----+--------,
R7
IN (+)
...--------<.----0
OUTPUT
R8
302
LINEAR INTEGRATED CIRCUIT
LM248/LM348
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Symbol
Supply Voltage
Differential Input Voltage
Input Voltage
Output Short Circuit Duration
Operating Temperature LM248
LM348
Storage Temperature
Vs
VID
VI
Value
Unit
V
V
V
±18
±36
±18
Continuous
-25 - +85
0-+70
-65 - + 150
Topr
T5tg
°C
°C
°C
ELECTRICAL CHARACTERISTICS
(Vee = 15V, VEE= -15V, Ta= 25°C, unless otherwise specified)
Characteristic
Symbol
Input Offset Voltage
VIO
Input O.ffset Current
110
Input Bias Current
liB
Test Conditions
Rs~10KQ
LM248
Min
LM348
Typ Max Min
1
NOTE 1
6.0
Typ Max
1
4
NOTE 1
50
4
30
200
30
nA
R;
Is
Large Signal Voltage Gain
Av
RL~2KQ
Channel Separation
CS
f = 1KHz to 20KHz
Common Mode Input
Voltage Range
VieR
Small Signal Bandwidth
BW
Av = 1
1.0
1.0
MHz
Phase Margin
rpm
Av=1
60
60
Degrees
Slew Rate
SR
Av= 1
0.5
0.5
V//ts
Output Short Circuit Current
los
25
25
mA
VOUT
25
NOTE 1
NOTE 1
RL~ 10KQ
RL~2KQ
NOTE 1
160
4.5
2.5
nA
Input Resistance
2.4
0.8
mV
Supply Current (all Amplifiers)
Output Voltage Swing
2.5
200
400
500
0.8
50
100
125
NOTE 1
6.0
7.5
7.5
Unit
2.4
25
160
15
15
120
±12
120
± 12
Mn
4.5
mA
V/mV
dB
V
±12 ±13
±12 ± 13
±10 ±12
±10 ±12
V
Common Mode Rejection Ratio CMRR
Rs~10Kn
NOTE 1
70
90
70
90
dB
Power Supply Rejection Ratio
Rs~1aKn
NOTE 1
77
96
77
96
dB
PSRR
• NOTE 1
LM348: a ~ Ta ~ + 7aoc
LM248: -25~Ta~ +85°C
qsSAMSUNG
Electronics
303
I
LM248/LM348
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 2 VOLTAGE SWING
Fig. 1 SUPPLY CURRENT
50
~
z
40
CI
:c
i
§.
1/1
I-
!Zw
::;,
30
Go
I-
a:
a:
::;,
u
::;,
0
lie
c(
~
w 20
Go
Go
Go
e
::;,
1/1
lie
c(
W
Go
10
/
/
V
V
V
/
!
..
OL---~----~----~----~----~--~
o
10
15
20
10
SUPPLY VOLTAGE ( ± V)
15
Fig. 3 SOURCE CURRENT LIMIT
15
I
Vs~ ±15
T. 25°C
I
Vs~ ± 15V
T,~25°C
""" ..........
~
CI
Z
~
~
w -10
~
CI
~
g
I-
::;,
::;,
o
~
\
15
10
20
\
Go
I-
1\
o
-5
5i
ffl
z
\
o
25
30
o
10
OUTPUT SOURCE CURRENT (mA)
15
20
Fig. 5 OUTPUT IMPEDANCE
Fig. 6 COMMON·MODE REJECTION RATIO
I
Vs~±15V
Av
100
80
.....,...1
Z
~
100
~~
100
U
Go
/'
10
.. 111
Av
10
iii'
:!!.
l/
II:
a:
:&
u
I-
::;,
Go
I-
1/
::;,
0
30
120
=Vs ±15V
=T, 25°C
!
25
OUTPUT SINK CURRENT (mA)
1k
e:w
25
Fig. 4 SINK CURRENT LIMIT
-15
'\\
o
20
SUPPLY VOLTAGE (± V)
V
/'
0.1
100
/
60
40
A~ 1
I
'"'"
~
20
,
~
/
1k
10k
FREQUENCY (Hz)
c8SAMSUNG
Electronics
100k
1M
100
1k
10k
T.~25°C
,
100k
FREQUENCY (Hz)
304
LM248/LM348
LINEAR INTEGRATED CIRCUIT
Fig. 7 OPEN LOOP FREQUENCY RESPONSE
110
90
I
~
Fig. 8 BODE PLOT
20
J
Vs= ±15VT.=2SoC
'\.
70
IS
10
I
~
iii
~
:2z SO
"
i
'\.
C
CJ
30
lk
JHls~
~
CJ
-15
'\.
-20
~
-25
~
10k
lOOk
=rn
~
I/)
!:i
§!
-10
/
~
r'\,.GAIN
~
30 ~
~
i\
\
20
!,
10
r\
-10
10
•
Fig. 10 SMALL SIGNAL PULSE RESPONSE
/~
\ ."
T.=25°C
I
/
\
\
!
I/)
!:i
0- 100
1
A~=1
Vs= ±15V-
Jo
100
r\1
L
\
FREQUENCY (MHz)
I
Av=l
Vs= ± 15V
R,,,2k
T.=25°C
Q
\'"
lk
~
III
40 ;;
-35
0.1
Va
V
III
III
SO
2k
Fig. 9 LARGE SIGNAL PULSE RESPONSE
/
60 U;
~
FREQUENCY (Hz)
10
70
,
I"'"
-30 I - -
1M
90
80
~~
-5
-10
100
'"
~
r--- ~
)s=LU
T.=25°C
z
C -10
10
10
100
I
1\
\
!
~
I
\
~
:3
i
V,N
10
V,N
100
-100
-10
40
80
120
160
200
TlME(j.s)
-TIME (!'s)
Fig. 12 INVERTING LARGE SIGNAL
PULSE RESPONSE
Fig. 11 UNDISTORTED OUTPUT VOLTAGE SWING
I
/
r\
V
~
~
-10
I
I
Vs= ±15VR,=2k
Vo
10V
/
1
~::2~~C-
\
J
\
\
§!
10
v,,.!
-10
20
FREQUENCY (Hz)
c8SAMSUNG
Electronics
40
60
80
100
120
140
160
180
200
TlME(!'5)
3DS
LINEAR INTEGRATED CIRCUIT
LM248/LM348
Fig. 13 INPUT NOISE VOLTAGE AND
NOISE CURRENT
160
Fig. 14 POSITIVE COMMON·MODE INPUT
VOLTAGE LIMIT
140
20
1.6
v1= 1115~
T.=25°C
1.4
~
~
g
80
1.2
i
1\
w
~
60
~
1.0
.s
0.8
a:
a:
l-
Z
W
'~~
~
CJ
MTAN NOISE VOLTAGE
w
0.6
III
6
z
z
c(
MEAN NOISE CURRENT
:Ii
~
C
">
~
III
40
0.4 w
:Ii
20
0.2
w
CI
~
~
15
I-
~
II.
!
w
Q
0
l'f
z
0
:Ii
:Ii
0
10
CJ
w
>
i=
iii
0
II.
o
10
+85°C
::::;
120
;; 100
I
I
-25°C~Ta~
l-
I
~
I
~
100
lk
10k
FREQUENCY (Hz)
5
/
5
/
/
10
/
/
15
/
20
POSITIVE SUPPLY VOLTAGE (V)
Fig. 15 NEGATIVE COMMON·MODE INPUT
VOLTAGE LIMIT
-20r----.-----r-----r----~----~--~
~
I-
~
~
~
oU --+------,N'I~
rt'
x
-15 r-----t---+--~ttf _:--t--_~+__-__I
g
~
oU
~------+---1
(----<:>
NOTCH OUTPUT
Q=BW
fa
where
T BP = Center frequency gai n
TN = Bandpass notch gain
10=_12,,-RC
R1 =QR
R2=~
TBP
R3=TNR2
C1=10C
Example: fa = 1000Hz
BW=100Hz
TBP= 1
TN =1
R= 160KIl
R1 = 1,6MIl
R2=1,6MIl
R3 = 1.6MIl
C = O.01"F
Fig. 17
c8SAMSUNG
Electronics
307
LM258/A, LM358/A, LM2904
LINEAR INTEGRATED CIRCUIT
DUAL OPERATIONAL AMPLIFIERS
8 DIP
The LM258 series consists of four independent, high gain, internally frequency compensated operational amplifiers which were designed specifically
to operate from a single power supply over a wide range of voltage.
Operation from split power supplies is also possible and the low power supply
current drain is independent of the magnitude of the power supply voltage.
Application areas include transducer amplifier, DC gain blocks and all the
conventional OP amp circuits which now can be easily implemented in Single
power supply systems.
8 SOP
FEATURES
• Internally frequency compensated for unity gain
• Large DC voltage gain: 100dB
• Wide power supply range: LM258/A, LM358/A: 3V - 32V
(or ± 1.5V - ± 16V)
LM2904: 3V - 26V (or ± 1.5V - ± 13V)
• Input common-mode voltage range includes ground
• Large output voltage swing: OV DC to Vee -1.5V DC
• Power drain suitable for battery operation.
9 SIP
BLOCK DIAGRAM
•
ORDERING INFORMATION
SCHEMATIC DIAGRAM
(One section only)
c8SAMSUNG
Electronics
Device
Package
LM358N
LM358AN
8 DIP
LM358S
LM358AS
9SIP
LM358D
LM358AD
8 SOP
LM258N
LM258AN
8 DIP
LM258S
LM258AS
9 SIP
LM258D
LM258AD
8 SOP
LM2904N
8 SIP
LM2904S
9 SIP
LM2904D
8 SIP
Operating Temperature
0- + 70°C
-25- + 85°C
-40- +85°C
308
LM258/A, LM358/A, LM2904
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
LM258/LM258A
LM358/LM358A
LM2904
Unit
Power Supply Voltage
Differential Input Voltage
Input Voltage
Output Short Circuit to GND
Vee~15V Ta=25°C (One Amp)
Operating Temperature Range
Storage Temperature Range
Vs
VID
VI
±160r32
±32
-0.3 to +32
± 16 or 32
±32
- 0.3 to +32
± 13 or 26
±26
-0.3 to +26
V
V
V
Continuous
Continuous
Continuovs
0-+70
-65 - +150
-40-+85
-65 - + 150
Topr
Tstg
-25 -+85
-65 - + 150
°C
°C
ELECTRICAL CHARACTERISTICS
(Vee=5.0V, VEE=GND, Ta=25°C, unless otherwise specified)
LM258
Characteristic
Symbol
Test Conditions
I
LM2904
LM358
Min Typ Max Min Typ Max Min Typ Max
i
VICM = OV to Vcc -1.SV
Vo = 1.4V, Rs = 00
2.9
5.0
2.9 7.0
2.9 7.0
Unit
Input Offset Voltage
VIO
mV
Input Offset Current
110
3
30
50
nA
Input Bias Current
lis
45
150
45 250
45 250
nA
Vee
-1.5
Vee
-1.5
Vce
-1.5
-------
Input Common-Mode
Voltage Range
Supply Current
VieR
Icc
Vce=30V
(LM2904, Vee = 26V)
0
RL =00, Vee = 30V
(LM2902, Vee = 26V)
RL = 00 ,,,wer full temperature range
Large Signal
Voltage Gain
Av
Output Voltage Swing
VOH
VOL
Vce = 15V, RL~2KO
Vo=1V to 11V
Vee =5V RL~10KQ
mA
0.5
1.2
0.5
0.5
mA
28
5
Power Supply
Rejection Ratio
PSRR
65 100
los
Isource
Output Current
Isink
Differential Input
Voltage
f = 1KHz to 20KHz
V
0.8 2.0
70
CS
0
0.8 2.0
CMRR
Short Circuit to GND
5
2.0
Common-Mode
Rejection Ratio
Channel Separation
0
50
0.8
50 100
IR L=2KO 26
Vce = 30V
Vee=26V for 29041 RL= 10KO 27
5
25 100
25 100
26
22
27
20
85
65
23
28
5
20
80
40
V/mV
24
V
100
80
dB
120
60
40
mV
dB
50 100
120
60
1.2
V
5
50
65 100
120
40
1.2
dB
60
mA
V in + = 1V, Vin - = OV
Vee =15V, Vo=2V
10
30
10
30
10
30
mA
Vin + = OV, Vin - = 1V
Vee = 15V, Vo = 2V
10
15
10
15
10
15
mA
V in + =OV, Vin - = 1V
Vee = 15V, Vo = 200mV
12 100
V ID
c8SAMSUNG
Electronics
12 100
Vee
p.A
Vee
Vee
V
309
I
LM258/A, LM358/A, LM2904
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Vec=.5.0V, VEE=GND, unless otherwise specified)
The following specification apply over the range of - 25°C:::;;Ta:::;; + 85°C for the LM258; and the O°C:::;;Ta:::;; + 70°C
for the LM358; and the -40°C:::;;Ta:::;; +85°C for the LM2904
Characteristic
Symbol
Input Offset Voltage
Via
110
Input Offset Current
Drift
f:"ldf:"T
Input Bias Current
Input Common-Mode
Voltage Range
Large Signal Voltage
Gain
VICM = OV to Vce -1.5V
Vo= lAV, Rs=OO
7.0
7.0
100
40
VICR
Vce = 30V
(LM2904, Vce = 26V)
0
Av
Vee = 15V, RL~2.0KO
Va=. 1V to 11V
25
V OH
26
/R L=2KO
Vee = 30V
Vee = 26V for 2904 1 RL = 10KO 27
45 200
10
300
Vce
-2.0
40
0
500
40 500
nA
Vec
-2.0
Vee
-2.0
V
0
V/mV
15
26
27
nA
pA/oC
10
15
28
mV
V
26
28
27
V
28
VOL
Vee =5V, RL~10KO
Isource
V in + = 1V, Vin - = OV
Vee = 15V, Vo=2V
10
30
10
30
10
30
mA
ISink
Vin + =OV, Vin - = 1V
Vee = 15V, Va = 2V
5
8
5
9
5
9
mA
Output Current
Differential Input
Voltage
Unit
/J- V/ oC
7.0
150
10
liB
10.0
9.0
7.0
<
Output Voltage Swing
LM2904
Min Typ Max Min Typ Max Min Typ Max
Input Offset Voltage
f:"Vlolf:" T Rs=OO
Drift
Input Offset Current
LM358
LM258
Test Conditions
V ID
c8SAMSUNG
Electronics
5
20
Vee
5
5
20
Vee
100
Vee
mV
V
310
LINEAR INTEGRATED CIRCUIT
LM258/A, LM358/A, LM2904
ELECTRICAL CHARACTERISTICS
(Vee = 5.0V, VEE=GND, Ta=25°C, unless otherwise specified)
LM258A
Characteristic
Symbol
Input Offset Voltage
Via
Input Offset Current
Ira
Input Bias Current
Input Common-Mode
Voltage Range
Supply Current
Large Signal Voltage Gain
Output Voltage Swing
Test Conditions
Unit
V leM = OV to Vee - 1.5V
Vo:::1.4V, Rs:::O
lee
Av
Vee::: 3OV
3.0
mV
5
30
nA
45
100
nA
1.0
3.0
2.0
2
15
40
liB
VieR
LM358A
Min Typ Max Min Typ Max
80
Vee
0
-1.5
Vee
0
-1.5
V
RL:::oo ,.Vee =30V
0.8
2.0
0.8
2.0
rnA
RL==,over full temperature range
0.5
1.2
0.5
1.2
rnA
Vee::: 15V, RL~2KO
Va::: 1V to 11V
VOH
I RL ::: 2KO
Vee::: 30V
Vee = 26V for 2904 I RL = 10KO
VOL
V ee =5V,
50
100
25
28
27
26
27
RL~10KO
VlmV
100
V
26
5
20
V
28
5
20
mV
Common-Mode Rejection Ratio
CMRR
70
85
65
85
dB
Power Supply Rejection Ratio
PSRR
65
100
65
100
dB
Channel Separation
CS
Short Circuit to GND
los
Isource
Output Current
ISink
Differential Input Voltage
VID
c8SAMSUNG
Electronics
f = 1KHz to 20KHz
40
=
120
120
60
40
dB
60
rnA
Vin + ::: 1V, Vin - OV
Vee::: 15V, Va = 2V
20
30
20
30
rnA
V in + = OV, Vin - ::: 1V
Vee = 15V, Va = 2V
10
15
10
15
rnA
Vin + =OV, Vin -::: 1V
Vo:::200mV
12
100
12
100
!J.A
Vee
Vee
V
311
•
LINEAR INTEGRATED CIRCUIT
LM258/A, LM358/A, LM2904
ELECTRICAL CHARACTERISTICS (Vee = 5.0V, VEE=GND, unless otherwise specified)
The following specification apply over the range of - 25°C:sTa:s + 85°C for the LM258A; and the O°C:sTa:s
for the LM358A
Characteristic
Input Offset Voltage
Input Offset Voltage Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Common-Mode
Voltage Range
Output Voltage Swing
Large Signal Voltage Gain
I
I
Symbol
VIO
V leM =OV to Vee -1.SV
Vo = 1.4V, Rs = 00
LM358A
4.0
7.0
15
7.0
30
110
I':::. hoI I':::. T
10
liB
40
VieR
Vee = 30V
VOH
Vee=30V
Vee = 30V
IRL=2KO
I
RL= 10KO
RL~ 10KO
mV
20
p,V/oC
75
nA
10
300
pA/oC
100
40
200
nA
Vee
-2.0
V
26
27
5.0
200
Vee
-2.0
0
0
26
28
S
Unit
27
20
V
28
5
V
20
mV
VOL
Vee = SV,
Av
Vee = 15V, RL~2.0KO
Vo=1V to 11V
25
Isource
Vin + = 1V, Vin - =OV
Vee = 15V, Vo = 2V
10
30
10
30
mA
Isink
Vin + = OV, Vin - = 1V
Vee = 15V, Vo=2V
5
9
5
9
mA
V1D
qsSAMSUNG
Electronics
LM258A
Min Typ Max Min Typ Max
I':::.Vloll':::.T
Output Current
Differential Input Voltage
Test Conditions
+ 70°C
15
Vee
V/mV
Vee
V
312
LM258/A, LM358/A, LM2904
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 1 SUPPLY CURRENT
Fig. 2 VOLTAGE GAIN
160
RL =20KO
120
~
...
ffi
§
~
2
...............
....
, ....,
RL
=2KO
80
tJ
i
rJl
~
-J--- 1----
Ta=O'C to +85'C
j"
-
40
Ta= -40jC
o
o
o
10
30
20
40
o
Fig. 3 OPEN LOOP FREQUENCY RESPONSE
I
Fig. 4 LARGE SIGNAL FREQUENCY
20
Vee
100
40
30
SUPPLY VOLTAGE (V)
140
120
20
10
SUPPLY VOLTAGE (V)
i
-
I
+15VI
!,
I'i
15
'\
I
I
I
II
I-- t--r-.",
80
~
Vcc ='30V &
-25~CSTaS
60
I
10
85'C
::,
Vee =;)9J8 ?Y,&, ~
' + 85'C
- 25'CSTaS
I
\
i
~r-10'
10'
10'
10'
10'
10'
10'
I
-
i"-
o
10'
10'
FREQUENCY (Hz)
I
I
10'
10'
FREQUENCY (Hz)
Fig. 6 OUTPUT CHARACTERISTICS
CURRENT SINKING
Fig. 5 OUTPUT CHARACTERISTICS
CURRENT SOURCING
10'
+al~ IJIJ~,c
Ta
+25'C
'I
If
100
Vee = + 15V_
~e~;I!'~OV ~
rll
1.1
rI
V
-
'--
100
10'
OUTPUT SOURCE CURRENT (mA)
c8SAMSUNG
Electronics
10'
.L~
10-'
10°
10'
10'
OUTPUT SINK CURRENT (mA)
313
LINEAR INTEGRATED CIRCUIT
LM258/A, LM358/A, LM2904
Fig. 7 INPUT VOLTAGE RANGE
Fig. 8 COMMON·MODE REJECTION RATIO
120
Vs= :t 7.5V
100
I---~
III
:!i!.
I--~
0
~
lii
>-
.!!.
w
CI
~
~
>
w
c
Q.
~
0
...:::>
80
60
0
Z
i!:
0
40
- r-
--
~
~
0
0
--..
20
I
10'
15
10
I
103
10'
10'
10'
FREQUENCY (Hz)
POWER SUPPLY VOLTAGE (:tV)
Fig. 9 CURRENT LIMITING
Fig. 10 INPUT CURRENT
OO.----r----,----,----,----,----,
80
80~---+----~----+----_r----+_--_1
ill
Of:
60
...
ffiIX:
g;
0
~
4'
50
40
30
~'''''''
60~---··+~~~-~~V__e~e=--+~30-V--_+----~--~
70
:i'
§.
----
to---
50
g;
40
~~
30
I---
20
~--_+--
~
r--- t--- r-
r--
0
- ...........
;:
20
- .. _ _
1
------.Vee= +15V
1'-----4 _____ _
--~~
------'----
-i--
--+----+-
10 ~--_I__-----+___--_+----_+_----_l_i ____
10
25
-25
-50
50
100
75
-25
-50
25
75
50
100
TEMPERATURE (DC)
TEMPERATURE (OC)
Fig. 12 VOLTAGE FOLLOWER PULSE
RESPONSE (SMALL SIGNAL)
Fig. 11 VOLTAGE FOLLOWER PULSE RESPONSE
RL=2KIl
Vee = 15V
T.= 25'C
Vee=30V
450
I
---
>§.
I
w 400
INPUT
CI
~ I--
~
0
"
i-""
OUTPUT
...>
I
II
V
~ I--
~
f\
\
J
350
0
I
~ i--
300
{}
275
10
20
30
TIME{JLs)
c8SAMSUNG
Electronics
40
10
50
TlME{JLs)
314
LM258/A, LM358/A, LM2904
TYPICAL APPLICATIONS
LINEAR INTEGRATED CIRCUIT
(Vee = 5.0V)
Fig. 13 Voltage Reference
Fig. 14 Non·lnverting DC Gain
Vee
+5V
~
_
~
__ _
Va
VOUT
GAIN=1
+~
R1 1.0M!l
10K
(a)
b)
Fig. 16 Pulse Generator
Fig. 15 AC Coupled Non·lnverting Amplifier
I
R1
R2
R1
1
1M!l
Co
\lOUT
~'o",
RL
100K!l
100K!l
R5
DC
Av=1
+~
V
100K!l
0
JL.rL
2 Vp . p
Av= 11
Fig. 17 Bi·Quad Filter
R
R
C
100K!l
100K!l
Q=BW
fa
where
TBp:: Center frequency gain'
TN = Bandpass notch gain
fo=_12"RC
R1 =QR
VREF
R2
c8SAMSUNG
Electronics
R2=~
Tsp
R3=TNR2
C1 =10C
Example: fa = 1000Hz
BW= 100Hz
Tsp==1
TN == 1
R==160K!l
R1 ==1.6M!l
R2= 1.6Mn
R3= 1.6M!l
C=O.01I'F
315
LM741C/E/I
LINEAR INTEGRATED CIRCUIT
8 DIP
SINGLE OPERATIONAL AMPLIFIERS
The LM741 series are general purpose operational amplifiers which
feature improved performance over industry standards like the LM709.
It is intended for a wide range of analog applications.
The high gain and wide range of operating voltage provide superior
performance in intergrator, summing amplifier, and general feedback
appl ications.
8 SOP
FEATURES
•
•
•
•
•
Short circuit protection
Excellent temperature stability
Internal frequency compensation
High input voltage range
Null of offset
BLOCK DIAGRAM
ORDERING INFORMATION
OFFSET
NULL
OFFSET
NULL
SCHEMATIC DIAGRAM
Device
Package
LM741ECN
LM741CN
8 DIP
LM741ECD
LM741CD
8 SOP
LM7411N
LM741EIN
8 DIP
LM7411D
LM741EID
8 SOP
Operating Temperature
o - + 70°C
- 40- + 85°C
.-~------~----~----~--~--------------~~--ovcc
IN (+)
R6
IN (-)
u------+-~--t----'
~------+----_o
OUTPUT
R7
OFFSET 0-----+---+____
NU LL 0 - - - - - -. .
c8SAMSUNG
Electronics
316
LINEAR INTEGRATED CIRCUIT
LM741C/E/I
ABSOLUTE MAXIMUM RATINGS (Ta
=25°C)
Characteristic
Symbol
LM741C
LM741E
LM741 I
Unit
Power Supply Voltage
Differential Input Voltage
Input Voltage
Output Short Circuit Duration
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Vs
VIO
VI
±18
±30
±15
Indefinite
500
0- + 70\
-65 -+ 150
±22
±30
±15
Indefinite
500
0-+ 70\
-65- + 150
± 18
±30
± 15
Indefinite
500
-40- + 85
- 65 - + 150
V
V
V
Po
Topr
Tstg
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(VCC = 15V, VEE = -15V, Ta = 25°C, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min
Typ
Max Min
0.8
3.0
VIO
Input Offset Voltage
Adjustment Range
VIOR
Input Offset Current
110
3.0
liB
30
Input Resistance
Input Voltage Range
Large Signal Voltage Gain
Output Short Circuit Current
Ri
Rs:s;50n
RL~2Kn
Vs= ±20V,
Vo=±15V
PSRR
c8SAMSUNG
Electronics
80
6.0
0.3
±16
RL~2Kn
±15
mV
200
nA
80
nA
2.0
Mn
V
V/mV
25
35
200
25
RL~10Kn
±12 ± 14
RL~2Kn
±10 ± 13
Rs:s;10Kn, VCM = ± 12V
Rs:s;50Kn, VCM = ± 12V
80
95
Vs= ±20V to Vs= ±5V
Rs:s;50n
86
96
Vs= ±15V to Vs = ±5V
Rs:s;10Kn
mV
500
±12 ±13
20
RL~10Kn
Unit
20
50
10
VOUT
Common Mode Rejection Ratio CMRR
30
Vs=±15V,
Vo = ± 10V
los
6.0
±15
±12 ±13
Vs= ± 15V
Power Supply Rejection Ratio
1.0
Vs= ±20V
Vs= ±20V
Output Voltage Swing
±10
Vs= ±20V
VICR
Av
Typ Max
2.0
Rs:s;10Kn
Input Offset Voltage
Input Bias Current
LM741 C/LM741I
LM741E
70
90
77
96
mA
V
dB
dB
317
•
LM741C/E/I
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
Characteristic
Transient
Response
I
I
Symbol
Rise Time
t,
Overshoot
OS
Bandwidth
BW
Slew Rate
SR
Supply Current
Power Consumption
(Continued)
Test Conditions
LM741E
Min
Unity Gain
Unity Gain
LM741C/LM741I
Typ
Max Min
Typ
0.25
0.8
0.3
6.0
20
10
0.43
1.5
0.3
0.7
80
Vs= ±20V
Pc
Unit
p's
%
MHz
V/p.s
0.5
RL=OOO
Is
Max
1.5
2.8
rnA
50
85
mW
150
Vs= ± 15V
ELECTRICAL CHARACTERISTICS
(-40CC:::;Ta:::;85°C for the LM7411, 0°C:5Ta:570°C for the LM741C and LM741E, Vcc= ± 15V, unless otherwise
specified)
Characteristic
Input Offset Voltage
Input Offset Voltage Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Resistance
Input Voltage Range
Symbol
Test Conditions
0.5
liS
0.21
Vs= ±20V
VOUT
RL~10KO
±16
RL~2KO
±15
c8SAMSUNG
nA
0.8
p.A
MO
±12 ±13
±12 ±14
RL~2KO
± 10 ± 13'
10
40
Rs:510KO, VCM = ± 12V
Rs:550KO, VCM = ± 12V
80
95
Vs= ±20V Rs:5500
to±5V Rs:510KO
86
96
RL~2KO
mV
nA/oC
RL~10KO
los
Av
300
0.5
±12 ±13
VICR
Unit
p.V/oC
61 10/6T
PSRR
Max
7.5
70
Ri
Typ
15
10
V
V
40
70
90
77
96
mA
dB
dB
32
Vs = ± 15V,
Vo= ± 10V
Vs= ± 15,
Vo=2V
Electronics
LM741C/LM741I
Max Min
110
Vs=±20V,
Vo= ± 15V
Large Signal Voltage Gain
Typ
4.0
6V lol6 T
Common Mode Rejection Ratio CMRR
Power Supply Rejection Ratio
I
Rs:510KO
Vs= ± 15V
Output Short Circuit Current
Min
Rs:5500
VIO
Vs = ±20V
Output Voltage Swing
LM741E
15
V/mV
10
318
LM741C/E/I
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 7 OUTPUT RESISTANCE vs FREQUENCY
Fig. 8 INPUT RESISTANCE AND INPUT
CAPACITANCE vs FREQUENCY
600
10M
100
R'N
~
500
sw
o
400
z
~
iii
I,
\
Vs=±1SV_
Ta=2S'C
Ii:
10
.s
w
0
~
Z
~
0
:.
300
a:
1
I-
...
:::>
c(
0
II
~ 200
o
-
100
1
10K
1K
100
~
C,N
~
~
10K
0.1
FREQUENCY (Hz)
WOK
10K
1K
100
1M
100K
1M
•
FREQUENCY (Hz)
Fig. 10 POWER CONSUMPTION vs AMBiENT
TEMPERATURE
Fig. 9 INPUT BIAS CURRENT vs AMBIENT
TEMPERATURE
100
Vs= ±1SV
Vs= ±'20V
90 t----i--
120
80
............
~
70
.........
l-
i
0
1'........
60
1'-,
50
INPUT BlAS- t - - -
Ul
c(
iii
-
40
I-
...
:::>
~
--
CURRENT
j-...
30
S"
~
w
100
0
Z
c(
Iii
iiia:
-."
80
r-- r--- I"""-
I-
...
:::>
~
---r--
60
20
INPUT OFFSET
10
40
~RE~T
-40
- 20
20
40
60
-20
80
20
100
60
TEMPERATURE (OC)
TEMPERATURE (OC)
Fig. 12 INPUT·RESISTANCE vs AMBIENT
TEMPERATURE
Fig. 11 INPUT OFFSET CURRENT vs AMBIENT
TEMPERATURE
100
V s = ±' 15V
Vs= ± 15V
150
3'
~
.§.
Z
0
W
~
:::>
0
Ul
z
10.0
0
0
~
0
I-
~
--+-~
Ii:
100
Iii
~
30
z
I-
§
--I-----
50
50
"-
a:
~
...............
~
r--
3.0
I
-
~
.---.-----
=:i
i
-20
5.0
20
TEMPERATURE (OC)
c8SAMSUNG
Electronics
I
60
100
1.0
-20
20
100
TEMPERATURE (OC)
319
LM741C/E/I
LINEAR INTEGRATED CIRCUIT
Fig. 14 FREQUENCY CHARACTERISTICS
va AMBIENT TEMPERATURE
Fig. 13 NORMALIZED DC PARAMETERS
va AMBIENT TEMPERATURE
1.75 ...--..,...--"""T"--r----,---r--.,.----,
Vs= ±15V
Vs= ±1SV
1.8
1.6
1.5
1.4
IU
:3
~
.... t'-o,
1.2
-~~
r- POWER SUPPLY
IU
f:
:s
IU
II:
INPUT RESISTANCE~
f=1KHz
./
.
CURRENT
~ ..""""
...
. /~
....
.... ,,"
.8
IU
:3
~
1.2S
IU
-
~ :::--~
2:
OUTPUT
SHORT CIRCUIT
CURRENT-
IIC
~
....
r--
.6
.4
.2
o
-40
-20
40
20
60
60
AMBIENT TEMPERATURE (OC)
TEMPERATURE (OC)
Fig. 15 FREQUENCY CHARACTERISTICS
va SUPPLY VOLTAGE
Fig. 16 OUTPUT SHORT CIRCUIT CURRENT
va AMBIENT TEMPERATURE
1.7so---r--,---,--"""T"--'----'
30
Ta= +2S·C
28
C
§.
zIIU
26
IIC
II:
:::>
U
!::
24
:::>
U
II:
0
~
'" '"
.........
.........
...........
...............
22
~
0
:r
............
!II
20
18
·\L---=7:l::.S:-'---:l10:----:-:!12'-=.S,------:1c1:
S -----:1,.:.7.':'"S-~2O'
:::>
INPutl
0.0
-10
/
I
Iil'
:s
100
i
90
60
70
z
1\
70
Ul
60
Q
50
0
=Ii
Z
0
:&
:&
0
-20
40
30
20
r-
10
t-
o
.600
TIME \itS)
c8SAMSUNG
Electronics
~
IU
/0"'""'
.400
IIIl
Vs = ± 15V
Ta= +25°C
80
t
II:
IU
/ .J
.200
IIIIIII~
0
'(
u
0.0
50
110
r-..
I
-5
40
120
I
Vs= ±1SV
RL=2KIl
CL= 100pF
I-
:::>
0
30
Fig. 18 COMMON·MODE REJECTION RATIO
va FREQUENCY
10
...
20
Fig. 17 TRANSIENT RESPONSE
20
>
§.
10
TEMPERATURE (OC)
I
I-
o
SUPPLY VOLTAGE (±V)
.800
1.0
...,.
10"
10'
10'
10'
10'
10'
10'
107
FREQUENCY (Ht)
320
LM741C/EII
LINEAR INTEGRATED CIRCUIT
Fig. 19 OUTPUT SWING AND INPUT RANGE
vs SUPPLY VOLTAGE
Fig. 18 VOLTAGE FOLLOWER LARGE
SIGNAL PULSE RESPONSE
40r-----r------r--~-___,--r__-_,
IVS=~15V
35
~
-INPUT
r-----c
CJ
~
f--
1
iUl
\,
I
I)
0.0
20
40
60
TIME (j.s)
c8SAMSUNG
Electronics
80
~
50
"c..~
e
"~
\
-5
-7
r----
\
-3
-
---
30
15
25
12.5
20
10
15
.7.5
z
1\
JOUTPUT
20
RL=2Kll
~a=25·C
10
I----+----t-------t---c-------i 2.5
100
0~5-~7.75--~10~~1~2.5~~1~5--7-17~.5--~2~·
•
SUPPLY VOLTAGE (:tV)
321
MC1458CI AC/II AI
LINEAR INTERGRATED CIRCUIT
DUAL OPERATIONAL AMPLIFIERS
8 DIP
The MC1458 series is a dual general purpose operational amplifier.
The MC1458 series is a short circuit protected and require no external
components for frequency compensation.
High common mode voltage range and absence of "latch up" make the
MC1458 ideal for use as voltage followers.
The high gain and wide range of operating voltage provides superior
performance in intergrator, summing amplifier and general feedback
applications.
8 SOP
FEATURES
•
•
•
•
•
Interal frequency compensation
Short circuit protection
Large common mode and differential voltage range
No latch up
Low power consumption
9 SIP
BLOCK DIAGRAM
•
0
0
>
~
::::>
0
I
+
~ ~
w
w
>
+
N
!:
I
N
N
gI-
0
0
>
!:
ORDERING INFORMATION
Device
Package
MC1458CN
MC1458ACN
8 DIP
MC1458CS
MC1458ACS
9 SIP
MC1458CD
MC1458ACD
8 SOP
MC14581N
MC1458AIN
8 DIP
MC14581S
MC1458AIS
9 SIP
MC14581D
MC1458AID
8 SOP
Operation Temperature
0- + 70°C
-25 - +85°C
c8SAMSUNG
Electronics
322
LINEAR INTERGRATED CIRCUIT
MC1458C/AC/IIAI
SCHEMATIC DIAGRAM
~~--------------+-----~--~~----------------~~Vcc
INPUT(+)
INPUT( -)
R6
0-------+---1--------+------'
OUTPUT
R7
L-----4-----+--------*------~--__+__--__+_--__+__---L----~------"'-----4~_oVEE
ABSOLUTE MAXIMUM RATINGS
Characteristic
Power Supply Voltage
Input Differential Voltage
Input Voltage
Operating Temperature Range MC145811AI
MC1458C/AC
Storage Temperature Range
c8SAMSUNG
Electronics
Symbol
Value
Vs
VID
±1B
±30
±15
-25- +85
0-+70
-65 -+ 150
VI
Topr
I
T~tg
Unit
V
V
V
°C
°C
qc
323
•
MC1458C/AC/I/AI
LINEAR INTERGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Vee =
+ 15V, Vee = -15V, Ta=25°C, unless otherwise specified)
MC1458AC/AI
MC4558CII
Unit
Symbol
Test Conditions
Input Offset Voltage
Vlo
RsS10KO
Input Offset Current
110
20
200
20
300
nA
Input Bias Current
liB
80
500
80
700
nA
Characteristic
Large Signal Voltage Gain
Input Voltage Range
Input Resistance
Min Typ Max Min Typ Max
2.0
Vo = ± 10V, RL~2.0KO
Av
20
6.0
20
200
±12 ±13
VieR
0.3
RI
200
1.0
1.0
MO
dB
RsS10KO
70
90
60
90
Rss10KO
77
90
77
90
Output Voltage Swing
2.3
Is
VOUT
5.6
dB
8.0
2.3
RL=10KO
±12 ±14
± 11 ± 14
RL=2KO
±10 ±13
±9 ± 13
20
Output Short Circuit Current
los
Power Consumption
Pc
Vo=OV
70
Transient Response (Unity Gain)
Rise Time
Overshoot
Slew Rate
tr
OS
SR
Vi = 20mV, RL~2KO, CLS 100pF
Vj =20mV, RL~2KO, CLS100pF
Vi = 10V, RL~2KO, CLS100pF
0.3
15
0.5
V
0.3
Power Supply Rejection Ratio
Supply Current (Both Amplifier)
mV
V/mV
± 11 ±13
Common Mode Rejection Ratio CMRR
PSRR
10
2.0
V
20
170
mA
mA
240
70
mW
p's
%
V/p.s
0.3
15
0.5
ELECTRICAL CHARACTERISTICS
(Vee =
+ 15V, VEe = -15V, NOTE ,1, unless otherwise specified)
Characteristic
Symbol
Test Conditions
RsS10KO
MC1458CII
MC1458AC/AI
Min
Typ
Max
Min
Typ
Max
Unit
Input Offset Voltage
VIO
7.5
12
mV
Input Offset Current
110
300
400
nA
Input Bias Current
liB
800
1000
Large Signal Voltage Gain
Av
Vo=±10V, RL~2.0KO
15
15
nA
V/mV
Common Mode Rejection Ratio
CMRR
Rs~10KO
70
90
70
90
dB
Power Supply Rejection Ratio
PSRR
Rs~10KO
77
90
77
90
dB
RL=10KO
±12
±14
± 11
±14
RL=2KO
±10
±13
±9
± 13
Output Voltage Swing
VOUT
Input Voltage Range
VieR
±12
± 12
V
V
NOTE 1
MC1458C/AC: O~ Ta~ 70°C
MC14581/AI: -25~Ta~ +85°C
c8SAMSUNG
Electronics
324
MC1458CI AC/II AI
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 1 OPEN·LOOP VOLTAGE GAIN
vs POWER SUPPLY VOLTAGES
Fig. 2 OPEN·LOOP FREQUENCY RESPONSE
120
120
115
~
100
-
110
Z
~
105
UI
~
~
100
9
95
g
./""
~-
-
80
60
,/
Q.
40
z
~
o
'"
20
90
85
-20
80
30
6.0
9.0
12
15
POWER SUPPLY VOLTAGE
18
21
10
M
32
•
10M
"""'---'--'--'--'--'--'-'-"'-----'--'-1--'-'-11~
\
CI
16
\
>
...~
\
1M
\
20
UI
!;
o
100K
~
24
~
10K
28~--+-~-rrH~---+-+'v~s=-±~15~V~
28
«
lK
Fig. 4 OUTPUT VOLTAGE SWING
vs LOAD RESISTANCE
Fig. 3 POWER BANDWIDTH
(LARGE SIGNAL SWING vs FREQUENCy)
o
100
FREQUENCY (Hz)
32
~
'"'"
'"'"
12
8.0
4.0
o
RL=2K FOLLOWER
VOLTAGE
,- j1i(iLj SUTi1ii TH D<5[
\
r---
1
10
100
1K
FREQUENCY (Hz)
c8SAMSUNG
Electronics
10K
100K
LOAD RESISTANCE (0)
325
MC3303/MC3403
LINEAR INTEGRATED CIRCUIT
QUAD OPERATIONAL AMPLIFIER
14 DIP
The MC3303 series is a monolithic Quad operational amplifier
consisting of four independent amplifiers. The device has high
gain, internally frequency, compensated operational amplifiers
designed to operate from a single power supply or dual power
supplies over a wide range of voltages. The common made input
range includes the negative supply, thereby eliminating the
necessity for external biasing components in many applications.
14 SOP
FEATURES
• Output voltage can swing to GND or negative supply
• Wide power supply range;
Single supply of 3.0V to 36V
Dual supply of :!: 1.SV to :!: 18V
• Electrical characteristics similar to the popular LM741
• CLASS AB output stage for minimal crossover distortion
• Short circuit protected output.
BLOCK DIAGRAM
ORDERING INFORMATION
Device
Package
MC3403N
14 DIP
MC3403D
14 SOP
MC3303N
14 DIP
MC3303D
14 SOP
Operating Temperature
0- +70 o C
-40- +85°C
SCHEMATIC DIAGRAM
r---.---------~----------~-----~~~--~---~~------Qvcc
R4
~~~~Q
. c8SAMSUNG
Electronics
OUTPUT
326
MC3303/MC3403
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Supply Voltage
Differential Input Voltage
Input Voltage
Output Short Circuit Duration
Power Dissipation
Operating Temperature MC3303
MC3403
Storage Temperature
Vs
VID
V,
± 18 or +36
V
V
V
±36
±18
Continuous
670
-40-+85
0-+70
-65-+150
Po
Topr
Ts1g
ELECTRICAL CHARACTERISTICS
CVcc= + 15V, VEE = -15V for MC3403, Vcc= + 14V, VEE=GND for MC3303, Ta=25°C,
Characteristic
Input Offset Voltage
Symbol
Test Conditions
V,O
,0
I NOTE1
Input Bias Current
lis
1NOTE1
Large Signal Voltage Gain
Av
Input Impedance
I
NOTE1
Ri
VOUT
RL =2KO
f---.
RL =2KO
Input Common Mode
Voltage Range
Common Mode Rejection
Ratio
1.5
8.0
NOTE1
V,CR
CMRR
Rs~
10KO
Power Supply Current
Is
Vo=O, RL = co
Output Short Circuit
Current
los
Each amplifier
Positive Supply
Rejection Ratio
PSRR+
Negative Supply
Rejection Ratio
PSRR-
Average Temperature
CoeffiCient of Input
Offset Current
L,1,olL,T
c8 !e!'lSUNG
Min
Typ
Max
1.5
10
12
10
75
5
150
200
200
30
200
0.3
1.0
0.3
1.0
+12.5
±12
±13.5
+10
+12
±10
±13
+10
±10
12V- 12.5VVEE
VEE
13V- 13.5VVEE
VEE
±10
90
70
2.8
7.0
±30
±45
30
150
50
±10
Unit
mV
nA
nA
VIm V
15
+12
70
200
400
20
15
50
100
500
20
RL = 10KO
Output Voltage Swing
Max
30
Vo= ± 10V
RL =2KO
MC3403
Typ
I NOTE1
'
unless otherwise specified)
MC3303
Min
5
Input Offset Current
mW
°C
°C
°C
MO
V
V
dB
90
2.3
7.0
mA
±20
±45
mA
30
150
p.VN
30
150
p.VN
50
pAloC
327
•
MC3303/MC3403
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS (Continued)
(Vee =
+ 15V,
VEE = -15V for MC3403, Vee =
Characteristic
+ 14V,
VEE = GND for MC3303, unless otherwise specified)
MC3303
Test Conditions
Symbol
Min
Input Offset Voltage Drift /:::,VIJ/:::,T
GBW Av =1, RL=2KO, Vo=20Vp-p, THD=5%
Power Bandwidth
Typ
MC3403
Max Min
Typ
Max
Unit
p.V/oC
10
10
9.0
9.0
KHz
1.0
1.0
MHz
V//J.s
Small Srgnal Bandwidth
BW
Slew Rate
SR
Av=1, VIN = -10V to +10V
0.4
0.4
Rise Time
tr
A v =1, RL =10KO, Vo =50mV
0.35
0.35
/J.S
Fall Time
t,
A v =1, RL=10KO, Vo=50mV
0.35
0.35
/J.S
Av =1, RL =10KO, Vo=50mV
Over Shoot
OS
Av =1, RL =10KO, Vo=50mV
20
20
%
Phase Margin
¢m
Av = 1, RL = 2KO, C L= 200pF
60
60
Degrees
Crossover Distortion
CD
VIN = 30mVp-p, Vo = 2.0Vp-p, f = 10KHz
1.0
1.0
%
NOTE 1
MC3403: O~Ta~ + 70°C
MC3303: -40~Ta~ +85°C
ELECTRICAL CHARACTERISTICS
(Vce= 5.0V, VEE=GND, Ta=25°C unless otherwise specified)
Characteristic
Symbol
Test Conditions
MC3303
Min
Typ
MC3403
Max
Min
Typ
Unit
Max
Input Offset Voltage
VIO
10
2.0
10
Input Offset Current
ho
75
30
50
nA
Input Bias Current
lis
500
200
500
nA
Large Signal Open
Loop Voltage Gain
Av
Power Supply
Rejection Ratio
Output Voltage Range
Supply Current
Channel Separation
200
PSRR
VOUT
RL= 10KO, Vee=5.0V
RL=10KO,
5.0V~Vee~30V
3.3
3.5
200
f = 1KHz to 20KHz
120
V/mV
150 p.V/v
3.3
3.5
V
Vec·2.0 Vee· 1 .7
Vee-2.0 Vee-1.7
2.5
Icc
CS\
10
150
c8SAMSUNG
Electronics
10
RL = 2.0KO
7.0
mV
2.5
120
7.0
mA
dB
328
MC3303/MC3403
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 1 OPEN LOOP FREQUENCY RESPONSE
120 r-
iii
:!!
z
:;;:
CI
w
CI
~
110
r-
100
rI-
"-
50
9
40
r-
30
r--
Z
w
"0
o
:;;
on
o
1\ I
"
1\
\,
,I
IJ IV fV IV V
1\
>
i
o
f'"
:;;
E
1il
20'r-
~
h " !-'-1
.....
o
10'
10'
10'
"I
r
,.......
v.... v...."
NOTE: Class AS output stage produces
distortioniess sinewave
r--
10
10'1
1\ I
i/
:J
\
I
10'
{\
J\
f\ I\
II ,
II
~
70: -
tl>
t=160
>
~
r-80Ir-r-r--
0
l-
90
60
Fig. 2. Wave Response
I'~~'=
± !~V""
Ta- +25°C'
I
50
10"
~s/DIV
•
FREQUENCY (Hz)
Fig. 4 OUTPUT VOLTAGE vs FREQUENCY
Fig. 3 OUTPUT SWING
30
30 r-Mmmrr-r1"TT1T1Tr-r1-rmm-rrnmrr-rr1WTT11I~I~TIr
...1 ±'.
~'T1~.~JTTTTI1III:"
Ta~25°C
..~.;;. +2!i°
R=10KIl
25 f-+H+tllff--++ttHfttI--i-+
25
't
c:.
w
CI
/
20
z
~
w
CI
~
15
0
...>
~
10
0
y
o
o
/v
VV
V
/
10 I--++++tlttr--t-+
oLlliill~~illL~~~~~ilill~~~~
10"
2.5
7.5
10
12.5
15
17.5
10'
10'
Fig. 5 INPUT BIAS CURRENT vs TEMPERATURE
100
...~
60
Z
g;
U
VI
50
ID
40
~
30
::!i
~
Ta=12soc
50
40
-
~
-
20
10
30
-r--r-- - -..
10
-20
20
40
TEMPERATURE (OC)
c8SAMSUNG
Electronics
60
80
-r--
r---...
20
o
-40
10'
Fig. 6 INPUT BIAS CURRENT vs SUPPLY VOLTAGE
V.='± 15V
60
w
10'·
60
90
a:
10'
FREQUENCY (Hz)
SUPPLY VOLTAGE (±Vl
70
10'
20
100
o
2.5
7.5
10
12.5
15
17.5
20
SUPPLY VOLTAGE (±Vl
329
LINEAR INTEGRATED CIRCUIT
MC3303/MC3403
TYPICAL APPLICATIONS
Fig. 7. Multiple feedback bandpass filter
Fig. 8. Wein bridge oscillator
50kfl
,.----4\J"'IIr---~~
~1---N\I'v-
V"
Rl
fo
VOUT
______R-I3
C2
=center frequency
R
~C
fo = 2
BW = Bandwidth
R in kfl
C in ",F
for fo = 1 kHz
R=16 kfl
C=O.OI ",F
1r
Fig. 9. Comparator with hysteresis
Q=~<10
BW
R2
HYSTERESIS
Cl=C2=~
3
Rl = R2= I}
R3=9Q2-1
If source impedance is high or varies, filter may be preceded with voltage
follower buffer to stabilize filter parameters.
VOUT
V,N0-------f
I
VOUT
VOL
I
I V,NH
I
VREF
V,NL
Design example:
given: Q 5, fo 1 kHz
Let Rl = R2 = 10 kfl
then R3 9(5)2 - 10
R3=215 kfl
=
VOHEOi
Rl
Use scaling factors in these expressions.
=
Rl
V,NL = Rl + R2 (VOL - VREF) + VREF
=
Rl
V,NH = Rl + R2 (VOH - VREF) + VREF
Rl
H = Rl + R2 (VOH - VoLl
C=f=I.6 nF
Fig. 11. AC Coupled inverting amplifier
Fig. 10. High impedance differential amplifier
R
RI
100kn
VI
VOUT
COFVOUT
RL
10kfl
Rl
f\
f\
\r
VOUT=C (1 +a+b) (V2-Vl)
V2
Av=
R
c8SAMSUNG
Electronics
=~
1
2V p p
o
T
Av = 10. (as shown)
330
LINEAR INTEGRATED CIRCUIT
MC3303/MC3403
Fig. 13. Voltage reference
Fig. 12. Ground referencing a differential input signal
V+
R2
10kO
>---OVOUT
R1
10kO
+VCM~--~~~----~~~--~
R3
1MO
I
I
I
R1
V+
VOUT = R1 + R2 (= 2
as shown)
I
VOUT= +Vcc
Fig. 15. Pulse generator
Fig. 14. AC Coupled non·inverting amplifier
1N914
1MO
100kO
R2
•
VOUT
Co
R3
100kO
R5
100kO
o {\
Av=1 +
:~
V
f\
Av = 11 (as shown)
2 V p. p
·Wide control voltage range:
OVOCSVCS2 (V + -1.5Voc)
T
Fig. 16. Bi·Quad filter
R
R
C
100kO
C
C1
VIN
R2
o-----t ~.-------4I'IIN--+-~
100kfl
100kO
R3
C1
>-----t J--o NOTCH
VREF
where
Tsp = Center frequency gain
TN = Bandpass notch gain
fO=
211"~C
R1=QR
c8SAMSUNG
Electronics
OUTPUT
R2=~
. Tsp
R3=TNR2
C1=10C
Example: fo = 1000 Hz
BW=100 Hz
Tsp=1
TN=1
R=160 kO
R1 1.6 MO
R2=1.6 MO
R3=1.6 MO
C= 0.001 "F
=
331
LINEAR INTEGRATED CIRCUIT
MC3303/MC3403
Fig. 17. Voltage controlled oscillator
OUTPUT 1
/'.A
OUTPUT 2
Fig. 18. Function generator
TRIANGLE WAVE
OUTPUT
SQUARE WAVE
,----I\N'\o----r---Q OUTPUT
R1
100kll
f- R1+R2 of R3=~
- 4CRfR1
c8SAMSUNG
Electronics
I
R2 + R1
332
MC4558C/AC/I
LINEAR INTEGRATED CIRCUIT
DUAL OPERATIONAL AMPLIFIER
8 DIP
The MC4558 series is a monolithic integrated circuit designed
for dual operational amplifier.
FEATURES
•
•
•
•
•
•
•
8 SOP
No frequency compensation required.
No latch-up.
Large common mode and differential voltage range.
Parameter tracking over temperature range.
Gain and phase match between amplifiers.
Internally frequency compensated.
Low noise Input transistors.
9 SIP
•
BLOCK DIAGRAM
•
g
>
;::::
::)
o
I'
~
+
~
w
W
>
+
N
~
I
N
~
N
to-
::)
0
o
o
>
ORDERING INFORMATION
Device
Package
MC4558CN
MC4558ACN
8 DIP
MC4558CS
MC4558ACS
9 SIP
MC4558CD
MC4558ACD
8 SOP
MC45581N
MC4558AIN
8 DIP
MC45581S
MC4558AIS
9 SIP
MC45581D
MC4558AID
8 SOP
Operation Temperature
0- + 70°C
-40- +85°C
=8~SUNG
333
LINEAR INTEGRATED CIRCUIT
MC4558C/AC/I
SCHEMATIC DIAGRAM (One Section Only)
vcco-----~--------~-----~~~----~~
IN (-)
Q15
IN (+) 0----+-----1------'
C2
L---+---+----+--o OUTPUT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Power Supply Voltage MC4558AC/AI
MC4558C/I
Differential Input Voltage
Input Voltage
Power Dissipation
Operating Temperature Range MC455811AI
MC4558C/MC4558AC
Storage Temperature Range
c8SAMSUNG
Electronics
Symbol
Vs
V,o
Vi
Po
Topr
T51g
Value
Unit
±22
±18
±30
±15
400
-40 - +85
0- + 70
-65 - + 150
V
V
V
V
mW
°C
°C
°C
334
LINEAR INTEGRATED CIRCUIT
MC4558C/AC/I
ELECTRICAL CHARACTERISTICS
(Vcc=15V, VEE= -15V, Ta==25°C, unless otherwise specified)
MC4558AC/AI
Characteristic
Symbol
Input Offset Voltage
VIO
Input Offset Current
Input Bias Current
Large Signal
Voltage Gain
Common Mode Input
Voltage Range
Test Conditions
Rs ;:5;10KO
hB
NOTE 1
Supply Voltage
Rejection Ratio
PSRR
Rs;:5; 10KO
RL~2KO
5
1
6
Is
Pc
Vi == 10V, RL~2KO
CL;:5;100pF
7.5
20
500
300
30
500
Ta=T max
20
500
800
Ta=T min
100
1500
800
50
NOTE 1
NOTE 1
NOTE 1
5
30
20
200
Unit
mV
200
Ta==T min
nA
500
200
nA
V/mV
15
25
± 12
±13
±12
::!:13
70
90
70
90
± 12 ±13
70
90
76
90
76
90
76
90
76
90
± 12
±14
± 12 ±14
±10
±13
± 10 ±13
5.0
3.5
V
dB
dB
V
5.6
Ta=T max
4.5
5.0
Ta=T min
6.0
6.7
70
Power Consumption
(Both Amplifiers)
6
300
3.5
Supply Current
(Both Amplifiers)
2
200
RL~10KO
VOUT
1
Typ Max
200
NOTE 1
CMRR Rs ;:5;10KO
Max Min
5
NOTE 1
VICR
MC4558CII
-~
Typ
3
max
Vo= ± 10V, RL~2KO
Common Mode
Rejection Ratio
Output Voltage Swing
Min
. Ta== T
110
Av
f-----
150
70
170
Ta=T max
135
150
Ta== T min
180
200
1.2
1.2
mA
mV
Slew Rate
SR
Rise Time
t,
Vi == 20mV, RL~2KO,
C L;:5;100pF
0.3
0.3
iJ.s
Overshoot
OS
V i ==20mV, RL~2KO,
C L;:5;100pF
15
15
%
V/iJ.s
NOTE 1
MC4558C/AC: Tmin:5Ta:5Tmax = O:5Ta:5 + 70°C
MC4558AIII: Tmin:5Ta:5Tmax= -40:5Ta:5 +85°C
c8SAMSUNG
Electronics
335
I
LINEAR INTEGRATED CIRCUIT
MC4558C/AC/I
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 2 RMS NOISE vs SOURCE RESISTANCE
Fig. 1 BURST NOISE vs SOURCE RESISTANCE
1000 _
__
100
~-1.0HZ Tq,).OKH.z
~
~
iw
sw
!; 100
Ii' 10
~Z
~
Z
IIL
~
.Ii
I-
1/
::;)
::;)
IL
~
10
.Ii
~
1.0
=
0~10~UW100~WU~1~~-K~llWl0LK-U~100m-K~WW10M
SOURCE RESISTANCE
(fl)
100
10
140
7'
i
fij
~
~
lJlllIlI.
::;)
IL
::;)
0
0.1
.Ii
Av
1
~~
Ii
1\
Ii :-.....
20
111111
100
\
40
~
III
10
~
/
111111
0.01
Rs = 100KO
",
1111111
I-
100
100
A,
1.0K
10K
SOURCE RESISTANCE
lOOK
1.0M
o
10
100
1.0K
FREQUENCY (Hz)
(n)
i
1
I
180
+140
~
\
I
"
'\.
~
\..
-~
"I\..
+20
j
-20
1.0
10
100
1.0K
"f\.\'\
10K lOOK 1.0M 10M
FREQUENCY (Hz)
c8SAMSUNG
Electronics
1001<
1
~
180
'\.
10K
Fig. 6 PHASE MARGIN vs FREQUENCY
Fig. 5 OPEN LOOP FREQUENCY RESPONSE
- '-
1M
In"
l1J11(lo
120 r---
~io-'
Av-looo
1.0
W
I-
lK
10K
lOOK
SOURCE RESISTANCE (n)
Fig. 4 SPECTRAL NOISE DENSITY
Fig. 3 OUTPUT NOISE vs SOURCE RESISTANCE
10
~
r-
I-
!
40
I
20
o
1.0
10
100
~
\ UNITY GAIN
i
_.
1.0K
i
\
I
I \
1
10K lOOK 1.0M 10M
FREQUENCY (Hz)
336
MC4558C/AC/I
LINEAR INTEGRATED CIRCUIT
Fig. 7 POSITIVE OUTPUT VOLTAGE SWING
vs LOAD RESISTANCE
15
'i
11
~
UI
li
!:l
g
9.0
!;
7.0
II.
I-
5.0
3.0
1.0
~
±12V
1
V
~
9.0
I-
7.0
J
::)
0
~
500
1.0K
2.0K
10K
LOAD RESISTANCE
5.0
I
3.0
±3V
20K
50Kl00K
(n)
..... 10-
V~
~I
::)
II.
I-
ifN
f...--
100
11
UI
li
!:l
g
±9V
_10-
... ~
j V
V'
""
± 15V SUPPLIES
I
),
::)
o
~
-
I
IIV
13
V
II
±15V SUPPLIES I
~ .....
/
13
Fig. 8 NEGATIVE OUTPUT VOLTAGE SWING
vs LOAD RESISTANCE
15
4-
1.0
100
~
±12V
±9V
±6V
...
1(3V
500
1.0K 2.0K
LOAD RESISTANCE
10K
20K
50K lOOK
•
(Il)
Fig. 9 POWER BANDWIDTH
(LARGE SIGNAL SWING VERSUS FREQUENCy)
28
24
1~
Fig. 10 TRANSiENT RESPONSE TEST CIRCUIT
20
UI
CJ
~
g
::)
II.
I-
I-
16
r-o---+--....--- To Scope
(Output)
I-
12
-
I-
::)
0
~ 8.0
1\1\
4.0
10
100
1.0K
10K
lOOK
1.0M
FREQUENCY (Hz)
c8SAMSUNG
Electronics
337
NOTES
KA219/KA319
LINEAR INTEGRATED CIRCUIT
DUAL HIGH SPEED VOLTAGE COMPARATOR
The KA219 is a dual high speed voltage comparator designed to operate from a single + 5V supply up to ± 15V dual supplies.
Open collector of the output stage makes the KA219 compatible with
RTL, DTL and TTL as well as capable of driving lamps and relays at
currents up to 25mA. Typical response time of BOns with ± 15V power
supplies makes the KA219 ideal for application in fast AID converts, level
shifters, oscillaters, and multivibrators.
14 SOP
FEATURES
•
•
•
•
•
•
•
Operates form a single SV supply
Typically 80ns response time at ± 1SV
Open collector outputs: up to + 3SV
High output drive current: 2SmA
Inputs and outputs can be isolated from system ground
Minimum fan-out of 2 (each side)
Two independent compators
BLOCK DIAGRAM
ORDERING INFORMATION
NC
Device
Package
KA319N
14 DIP
KA319D
14 SOP
Operating Temperature
NC
OUTPUT1
IN2 (-)
KA219N
14 DIP
KA219D
14 SOP
O-+70°C
-25 - +85°C
SCHEMATIC DIAGRAM
,-~~~--~~-'------------~~~~-------'-----OVcc
IN (_)"----__--'--T
IN (+)
l---+---+---~--O
OUTPUT
y
i
R17
L-----~-o
GN D
L----~VEE
c8SAMSUNG
Electronics
341
•
KA219/KA319
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Supply Voltage
Output to Negative Supply Voltage
Ground to Negative Supply Voltage
Ground to Positive Supply Voltage
Differential Input Voltage
Input Voltage
Output Short Circuit Duration
Power Dissipation
Operating Temperature Range KA219
KA319
Storage Temperature Range
Vs
Vo - VEE
GND-VEE
GND-Vee
VIO
VI
Unit
Value
V
V
V
V
V
V
sec
mW
36
36
25
18
±5
±15
10
500
-25 - +85
0-+70
-65 - +150
Po
Top,
T s1g
°C
°C
ELECTRICAL CHARACTERISTICS
(Vee = +15V, V EE = -15V, Ta=25°C, unless otherwise specified)
Characteristic
Symbol
Input Offset Voltage
(Note 1)
VIO
Input Offset Current
(Note 1)
ho
Input Bias Current
118
KA219
Test Conditions
Min
Rss5KO
I Note
3
I Note
3
Max
0.7
4.0
Voltage Gain
Av
Response Time
(Note 2)
t,
Min
VOL
150
10
75
80
VinS - 5mV, 10 = 25mA
0.6
250
VEE=OV
VinS - 6mV, ISinkS3.2mA
0.23
8
Vjn~10mV,
Input Voltage Range
VieR
Note 3
c8SAMSUNG
Electronics
2
1
10
I Vee = 5V,
80
ns
V
±13
1
0.4
10
±13
3
V
V
p.A
0.2
VEE = OV
1.5
V
Vo=35V
IVs =±15V
nA
V/mV
0.4
0.2
nA
40
0.3
I Note 3
1000
1.5
VEE=OV
VinS -10mV, IsinkS3.2mA
Vo=35V
mV
1200
0.6
Vee~4.5V,
200
Unit
300
500
40
Vs= ± 15V
IOL
8.0
1000
3
10
Vin~5mV,
2.0
100
Vee~4.5V,
Output Leakage
Current
Max
10
VinS - 10mV, 10 = 25mA
Saturation Voltage
Typ
7.0
10
I Note
KA319
Typ
1
p.A
V
3
342
KA219/KA319
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Vec = + 15V, VEE = -15V, Ta = 25°C, unless otherwise specified)
Characteri stic
I
I
I
!
I
Symbol
Test Conditions
~Min
KA219
Typ
KA319
Max
Min
Typ
Max
Unit
Differential In put
Voltage
VID
Positive Supply
Current
Icc1
Vcc =5V, VEE=OV
3.6
Positive Supply
Current
Ice2
Vs= ±15V
7.5
11.5
7.5
12.5
rnA
Negative Supply
Current
lEE
Vs= ± 15V
3
4.5
3
5
rnA
±5
±5
V
rnA
3.6
Note 1. The offset voltage and offset currents given are the maximum values required to drive the output within
a volt of either supply with a 1rnA load. Thus, these parameters define an error band and take into account
the worst case effects of voltage gain and input impedance.
2. The response time specified is for a 100mV input step with 5rnV overdrive.
3. KA319: O!'>Ta:::;; + 70°C
KA219: - 25 !'> Ta:::;; + 85°C
c8SAMSUNG
Electronics
343
•
KA219/KA319
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 1 INPUT CURRENT
Fig. 2 OUTPUT SATURATION VOLTAGE
500
Vs= ±115V
-
400
CC
...S
~
25~--~--+---+---+---+'~+---i--~
r-- ~ t---
r-
a:
a:
i
15~--~--~--~--~~~--+---+-~
...
(,)
(,)
~
20~--~--~--~--~~~--+---+-~
::)
::)
...
1
...
300
::)
200
0..
g
~
10~--~--+---+-~~--+---+---+---i
100
o
-40
OFFSET
- --
-20
20
40
60
01~0--~~~~~--~.4--~~~~~.7~~.8
80
TEMPERATURE (OC)
OUTPUT VOLTAGE (V)
Fig. 4 RESPONSE TIME FOR VARIOUS
INPUT OVERDRIVER
Fig. 3 TRANSFER FUNCTION
40
8.0
I
I
Vs = ±15V
35 r- RL =l.4KIl
Ta=25"C
~
:z:
~
:z:
/
/
25
20
...~
...~
15
0
10
6.0
I
5.0
4.0
-1.0
3.0
...>
~
0
2.0
RL =5OOIl
5 0V
1+ =1 .
-40
>
...
~ -60
~
~
::)
~~
-120
6.0
E
w
CI
~
0
~
~
4.0
~
1\ 1\ r\ ?urn
C
...>
2.0 f--
fornv ~
::)
1.0
..- ..hi)
a..
~
,......' r-...' r-...
0
~-
-0.6
w
~
0
0
1"
o ~-- ro-- ~
9
CI
J:i
5.0
~
~
V+ =5.0V
If'
II/
::)
~s= J5.0V
w
CI
I
/
S
7.0
V
30
w
"~
:;;-
tJ6V
o
-0.2
0.2
0.6
40
1.0
DIFFERENTIAL INPUT VOLTAGE (mV)
120
80
160
TIME (nS)
Fig. 5 RESPONSE TIME FOR VARIOUS
INPUT OVERDRIVER
Fig. 6 INPUT CHARACTERISTICS
120
S
w
";!
6
l
r-- r -
:;;-
700
60
40
...
15
::)
0..
~
a:
w
g 2.0
...
::)
S
5.0m
/
1/
I
I
I
I
I
I
I
I
~
I
~
!
100
'/
I
./ -:b
I
1
0
60
120
I
J
... 200
~ ~ 2.0m~
40
I
I
~
20mV-
I
I
400
m
4.0
!
I
~
~
I
..1
I
(,) 300
6.0
";!
600
~ 500
...>
I
I
Ta=12S "C
Vs=5.0V
RL =5000
V + =5.0V
160
-100
-10
If
-8
r-JAxlMtiM DIFFEjNTIAIL
i INPUT VOLTAGE
-6
-4
-2
8
10
TIME (n5)
c8SAMSUNG
Electronics
344
LINEAR INTEGRATED CIRCUIT
KA219/KA319
Fig. 7 RESPONSE TIME FOR VARIOUS
INPUT OVERDRIVER
120
Fig. 8 RESPONSE TIME FOR VARIOUS
INPUT OVERDRIVER
IVs=~15V
t-- I--
:;§.
w
Rl =500U
V+ =5.0V
0
~
Vs = l15V
Rl = 5000
V+ 15.0V
~ -4 0
....
~ -80
0
~
I-- t...-12O
6. 0
6. 0
~
,
~
~
4.0
~
g
~ ~5Lv
20mV-
j
2.0
2.0my~
~
~V
4. 0
~
g
2.0
I
20mV-
160
120
80
40
V
~
()
i
Ul
J
V
V
V
,. 1----
2.5
I
-'
-- --
--- NEGA IVE
10
7.5
V
1./
---
,/It"
12.5
15
17.5
20
Fig. 12 OUTPUT LIMITING CHARACTERISTICS
~
~ -1. 2
i
o
~
o
~
~
Vs· =5.0V, v s - =0-
t-- t--t-
i . . . . .1'---"
f---R-"r--_t_--t---_f---t-----j1.0
<-
V,i± 15
:::;
w -1. 6
o
80
,..---........,.------,-----,-------r----,-------, 1.2
I I 1
f:::
-0. 8
60
40
TEMPERATURE (OC)
Fig. 11 COMMON MODE LIMITS
:::- t['-.::
20
-20
SUPPLY VOLTAGE (;tV)
-0.4
160
10~--~--~----r---'---~----r-~
,.J)--
....
120
80
Fig. 10 SUPPLY CURRENT
Fig. 9 SUPPLY CURRENT
10
15II:
f-2,Or V
TIME (n5)
TIME (n5)
POSITIVE
)
5 0mV
.
l\ f\:
~
o
o
<-§.
r\ I~ t-
!;
~
40
~
§.
....
........
0.8
15II:
~
II:
::>
o
0.6 iii
....
REFERRIED TOI SUPPLY VOLTAGES
!!!
:;
-2.0
c
II:
w
()
II:
o
Ii:o
1.2
8
0.8
Vs =
i
~
z
9
0.4
:z:
~
fl
Ul
15V, is. = 5 OV, Vi = 0
i--J--------,~---_t_--+__-_f--_+_----j
i
0.4
0.2
V- 55 - 35
-15
5.0
25
45
65
TEMPERATURE (OC)
c8SAMSUNG
Electronics
85
105
125
5.0
10
OUTPUT VOLTAGE (V)
345
KA710C/I
LINEAR INTERGRATED CIRCUIT
HIGH SPEED VOLTAGE COMPARATOR
14 DIP
The KA710CII is a high speed voltage comparator intended for use as
an accurate, low-level, digital level sensor or as a replacement for
operational amplifiers in comparator applications where speed is of
prime importance.
The output of the comparator is compatible with all intergrated logic
forms.
The KA710C/I is useful as pulse height disciminators, a variable threshold
schmitt trigger, voltage comparators in high-speed AID converters, a
memory sense amplifier or a high noise immunity line receiver.
14 SOP
FEATURES,
• Low offset voltage: 5mV
• High gain: 1000 VN
• High speed: 40ns Typ
BLOCK DIAGRAM
ORDERING INFORMATION
Device
Package
KA710CN
14 DIP
KA710CD
14 SOP
KA7101N
14 DIP
KA710lD
14 SOP
Operating Temperature
o -+ 70°C
-
-25 - +85°C
SCHEMATIC DIAGRAM
OUTPUT
IN (+)
IN (-)
GND~+-----------------------------------~--~
c8SAMSUNG
Electronics
346
LINEAR INTERGRATED CIRCUIT
KA710C/I
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Positive Supply Voltage
Negative Su pply Voltage
Peak Output Current
Output Short Circuit Duration
Differential Input Voltage
Input Voltage
Power Dissipation
Operating Temperature Range KA710C
KA7101
Storage Temperature Range
Vee
VEE
Ipeak
Input Offset Voltage
Symbol
Via
Input Offset Current
(Note 1)
110
Input Bias Current
liB
Large Signal Voltage Gain
Av
Input Voltage Range
VieR
Po
Top,
Tstg
°C
°C
KA7101
Test Conditions
Min
RsS2000, NOTE 1
Max
0.6
2.0
I Note 2
INote 2
1250
Positive Output Level
VOH
OsI0<5mA,
Negative Output Level
VOL
Vin~5mV
Output Sink Current
ISink
VO=OV Vin~5mV
lee
VoSOV
Max
1.6
5.0
6.5
0.75
3.0
1.8
7.0
5.0
20
7.0
25
27
45
25
40
1800
1.8
5.0
7.5
1000
±5.0
VIDR
Typ
1700
Unit
mV
p,A
p,A
VIV
2
Vee= -7V
CMRR
Min
3.0
NOTE 1
I Note
KA710C
Typ
I Note 2
Differential Input Voltage Range
Rss2000, NOTE 2
80
±5.0
95
70
±5.0
Vin~5mV
V
94
dB
±5.0
V
2.5
2~9
4.0
2.5
2.9
4.0
V
-1.0
-0.5
0
-1.0
-0.5
0
V
2.0
2.2
1.6
2.2
4.7
9.0
4.7
4.0
Negative Supply Current
lEE
Vo=OV, Vin= +5mV
4.0
7.0
Power Consumption
Po
Va = OV, Yin = 10mV
80
150
t,
(Note 3)
40
Response Time
V
V
mA
Sec
V
V
mW
(Vee = + 12V, VEE = -6V, Ta=25°C, unless otherwise specified)
Common Mode Rejection Ratio
Pdsitive Supply Current
Unit
+14
-7
10
10
±5
±7
300
0-+70
-25 - +85
-65-+150
VID
VI
ELECTRICAL CHARACTERISTICS
Characteristic
Value
mA
9.0
mA
7·9
mA
150
mV
J
40
nS
Note 1. The input offset voltage and input offset current are specified for a logic threshold voltage as follows:
For 7101, 1.65V at -25°C, 1.4V at +25°C, 1.15V at +85°C. For 710C, 1.5V at O°C, 1.4V at +25°C, 1.2V
at + 70°C.
Note 2. KA710C: OsTas + 70°C
KA7101: -25sTas +85°C
Note 3. The response time specified is a 100mV input step with 5mV overdrive (KA710).
c8SAMSUNG
Electronics
347
I
KA710C/I
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 2 VOLTAGE GAIN
Fig. 1 SUPPLY CURRENT
10r--r--~-.--'--'--'-~--'--'--'
I---+-+--+-+--+-+---+-
2000
Ve~=12~
I.
-r-....
VEE = - 6V -Ta=2S"C
1---+--f---+------1--+---+--+-l o 0
-
=
~
1800
1600
2
~
'\
\
1400
1000
-.2
.2
\
'\
1200
.--I---+--~_+--+-_+-+-_+~
-.4
~
~
PO ITIVEI
..
Vcc=12V _
VEE = -6V
.4
\
-40
80
40
TEMPERATURE (OC)
INPUT VOLTAGE (V)
Fig. 4 INPUT BIAS CURRENT
Fig. 3 INPUT OFFSET CURRENT
loS
J
J.
Vee=12V
VEE = - 6 V -
Vee=12V
VEE = - 6 V -
~
I-
I~
Z
III
II:
~
Q
Iii
"
~0
~
!:
.S
o
-40
'"'"
'-...... ~
--
o
80
40
-40
..........
I'- r--
r-
80
40
TEMPERATURE (OC)
TEMPERATURE (OC)
Fig. 6 OUTPUT SINK CURRENT
Fig. 5 OUTPUT VOLTAGE LEVEL
l
I
Vee = 12V
VEE = -6V-
f--
-~~~LEJEL
--
-r-----
Vee = 12V
VEE = -6V
ct
.§.
I-
ffi
II:
II:
:>
Q
lo<
Z
iii
I-
:>
~
o
NEGATIVE OUTiUT LEVEL
-1
-40
-
I
40
TEMPERATURE (OC)
c8SAMSUNG
Electronics
80
1~--~--~--~--~----~--~--~
-40
40
80
TEMPERATURE (OC)
348
LINEAR INTEGRATED CIRCUIT
KA710C/I
Fig. 8 RESPONSE TIME
Fig. 7 RESPONSE TIME
120
g
0
80
UI
CI
~
g
...
~
Vcc=+12V
Vee = -6V
'Ta=25'C
I--I--
:;
-4 0
0
Vee = +12V
VEE = -6V
Ta=25'C
-80
~
I--I--
I
-,120
0
I
~
UI
~
g
:
_
......
4.0
.2.0
~
10mv
1
0.0
20mV
NnL
~~
4.0
7'?5mV
2012.0
10ft ~ ~
5mV
0.0
o
....i
I
-2.0
i
-2.0
0.0
40
80
TIME (nS)
120
160
0.0
40
80
120
160
TIME (nS)
I
c8SAMSUNG
Electronics
349
LINEAR INTEGRATED CIRCUIT
KA711C/I
DUAL HIGH~SPEED DIFFERENTIAL
COMPARATOR
14 DIP
The KA711CII contain two voltage comparatorsth
with separate differential inputs, a common output and
provision for strobing each side independently. The dev·
ice features high accuracy, fast response, low offset
vol tage, a large input voltage range, low power consumption and compatibility with practically all integrated logic forms.
The KA 711 CII can be used as a sense amplifier for
memories, and a dual comparator with OR'ed outputs
is required, such as a double-ended limit detector.
14 SOP
FEATURES
•
•
•
•
Fast response time: 40ns (Typ)
Output compatible with most TTL circuits
Indepel"!dent strobing of each comparator
Low offset voltage
ORDERING INFORMATION
BLOCK DIAGRAM
Device
Package
KA711CN
14 DIP
KA711CD
14 SOP
KA7111N
14 DIP
KA7111D
14 SOP
Operating Temperature
0- + 70°C
-25 -+85°C
SCHEMATIC DIAGRAM
INPUT(-)B
INPUT(-) A
~---+--u
INPUT( +) B o--+--~
INPUT (+) B
VEE ( ) - - - - - - * - - - - + - - - * - - - - - - - - - '
GND
c8·SAMSUNG
Electronics
350
LINEAR INTEGRATED CIRCUIT
KA711C/I
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
Characteristic
Symbol
Value
Unit
Positive Supply Voltage
Negative Supply Voltage
Differential Input Voltage
Input Voltage
Strobe Voltage
Peak Output Current
Continuous Total Power Dissipation
Operating Temperature Range KA711C
KA7111
Storage Temperature Range
Vee
VEE
lO
VI
Vst
Ipeak
Po
+14
-7
±5
±7
0-6
50
500
0- + 70
-65 - + 150
-25 - +85
V
V
V
V
V
mA
mW
v
Top,
Tstg
°C
°C
ELECTRICAL CHARACTERISTICS
(Vcc=
+ 12V, VEE = -6V, Ta=25°C, unless otherwise specified)
Characteristic
Symbol
I
KA711C
KA71111
Test Conditions
Min
Typ
Max
1.0
3.5
Min
Typ
Max
1.0
5.0
Unit
I
Input Offset Voltage
VIO
I Rs 2: 2000.
V1CM =OV
• VOUT= 1.4V
Input Offset Current
110
INOT~_2
VOUT = 1.4V
0.5
I NOTE
liB
750
Av
Input Voltage Range
VICR
Differential Input Voltage Range
VIOA
Output Resistance
Ro
Output Voltage (High)
VOH
I NOTE
2
VEE = -7.0V
75
25
700
1500
500
±5.0
±5.0
4.5
Output Voltage (Low)
VOL
VIN~10mV
Loaded Output High Level
VLOM
VIN~10mV,
Strobed Output Level
Vso
Vstrobe ~ 0.3V
Output Sink Current
ISink
VIN~ 10mV, Vo~OV
Positive Supply Current
lee
Vo=OV, VIN =10mV
8.6
-1.0
2.5
0
3.5
0
-1.0
0.5
V
0
5.0
-1.0
-0.5
0
2.5
3.5
-1.0
0.5
0.8
p.A
V
4.5
5.0
f.LA
VJV
200
200
10=5mA
1500
±5.0
±5.0
VIN~10mV
100
150
500
mV
15
25
150
!Ta=o°c
Large Signal Voltage Gain
0.5
10.0
20
2
25
Input Bias Current
6.0
4.5
V
V
V
0
V
0.8
mA
8.6
mA
Negative Supply Current
lEE
Vo = OV, VIN = 10mV
3.9
Strobe Current
1st
Vstrobe = 100mV
1.2
2.5
1.2
2.5
mA
Power Consumption
Po
Vo=OV, VIN~10mV
130
200
130
230
mW
Response Time
t,
(NOTE 1)
40
40
ns
12
12
ns
Strobe Release Time
t,s
3.9
mA
Note: 1. The response time specified is for a 100mV input step with 10mV overdrive
2. KA711C: O~Ta~ + 70°C
KA7111: - 25~Ta~ + 85°C
3. The input offset voltage and input offset current are specified for a logic threshold voltage of 7111, 1.65V
at -25°C, 1.4V at +25°C, 1.15V at +85°C, for 711C, 1.5V at O°C, 1.4V at +25°C, 1.2V at + 70°C.
c8SAMSUNG
Electronics
351
•
LINEAR INTEGRATED CIRCUIT
KA711C/I
TYPICAL APPLICATIONS
• Fig. 1 Sense Amplifier With Supply Strobing
for Reduced Power Consumption*
KA711C
POSITIVE
SUPPLY
BUS
Fig. 2 Double-Ended Limit Detactor
With lamp Driver
UPPER
LIMIT
VOLTAGE
L1
INPUT
LOWER
LIMIT
VOLTAGE
FROM
SENSE
LINE
* Standby dissipation is about 40mW
c8SAMSUNG
Electronics
352
LM239/A, LM339/A, LM2901, LM3302 LINEAR INTEGRATED CIRCUIT
QUAD DIFFERENTIAL COMPARATOR
14 DIP
The LM239 series consists of four independent voltage comparators designed to operate from single power supply over a wide
voltage range.
FEATURES
• Single or dual supply operation
• Wide range of supply voltages LM239/A, LM339/A: 2 - 36V
LM2901 ,(or ± 1 - ± 18V)
LM3302: 2 - 28V
(or ± 1 - ± 14V)
• Low supply current drain 800pA 1YP• Open collector outputs for wired and connectors
• Low input bias current 25nA 1YP• Low input offset current ± 2.3nA Typ.
• Low input offset voltage ± 1.4mV Typ.
• Common mode input voltage range includes ground.
• Low output saturation voltage
• Output compatible with TTL, DTL and MOs logic
system
BLOCK DIAGRAM
OUT2
1
•
~-----,
sop
ORDERING INFORMATION
r - - - - - - - - f 14 OUT3
c8SAMSUNG
Electronics
14
Device
Package
LM339N
LM339AN
14 DIP
LM339D
LM339AD
14 SOP
LM239N
LM239AN
14 DIP
LM239D
LM239AD
14 SOP
LM2901N
LM2901D
LM3302N
LM3302D
14
14
14
14
Operating Temperature
0-70°C
-25- +85°C
DIP
SOP
DIP
SOP
0- +85°C
353
•
LM239/A, LM339/A, LM2901, LM3302 LINEAR INTEGRATED CIRCUIT
SCHEMATIC DIAGRAM
VccO~-----------.-----------~------~~
IN (+)
o---+---I
IN (-)
o------+---+-----If-.---+-----I
____+---+----l-O OUTPUT
D5
D6
GNDo------+--~----*--~----~~~_+----~
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Power Supply Voltage
Power Supply Voltage Only LM3302
Differential Input Voltage
Differential Input Voltage Only LM3302
Input Voltage
Input Voltage Only LM3302
Output Short Circuit to GND
Power Dissipation
Operating Temperature LM239/LM239A
LM339/LM339A
LM2901/LM3302
Storage Temperature
Vs
Vs
VID
VID
VI
VI
±18 or 36
± 14 or 28
36
28
-0.3 to +36
-0.3 to +28
Continuous
570
0- +70
-25- +85
-40- +85
-65 -+ 150
V
V
V
V
V
V
c8SAMSUNG
Bectronics
PD
Topr
Tstg
mW
°C
°C
°C
°C
354
LM239/A, LM339/A, LM2901, LM3302 LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Vee = 5V, Ta = 25°C, unless otherwise specified)
Characteristic
Symbol
Test Conditions
LM239A/LM339A
Min Typ
Input Offset Voltage
VIO
V leM = OV to Vee -1.5V
Vo = 1 .4 V, Rs = 0
±1
NOTE 1
Input Bias Current
Input Common Mode
Voltage Range
Supply Current
NOTE 1
NOTE 1
VieR
NOTE 1
AVOL
Vee = 15V, RL~ 15KO (for large swing)
Large Signal
Response Time
t RES
VIN =TTL Logic Swing
V,ef=1.4V, V RL =5V, RL=5.1KO
Response Time
tRES
V RL =5V, RL=5.1KO
Output Sink Current
Isink
VIN-~1V,
V IN + =OV, Vo::s;1.5V
Output Saturation
Voltage
V sat
VIN-~1V,
V IN + =OV
V ID
±5
mV
±9.0
±50
±2.3
±50
± 15lJ
57
250
250
0
Vec-1.5
0
Vee-1.5
0
Vee-2
0
Vee-2
1.1
50
2.0
200
1.1
50
350
1.4
6
18
140
6
400
nA
400
400
RL=OO
lee
Voltage Gain
Differential Voltage
±1.4
± 150
57
Is
Ileak
±2
Unit
Max
nA
"0
Output Leakage
Current
Min Typ
±4.0
±2.3
Input Offset Current
LM239/LM339
Max
2.0
V
mA
200
V/mV
350
ns
1.4
f,.tS
18
mA
140
400
mV
Isink =4mA
NOTE 1
V IN - =0
Vo =5V
700
V IN + = 1V
Vo=30V
1.0
1.0
f,.tA
NOTE 1
36
36
V
0.1
700
0.1
nA
* NOTE 1
LM339/A: O::s;Ta::s; + 70°C
LM239/A: - 25::s;Ta::s; + 85°C
LM2901/3302: - 40::s;Ta< + 85°C
c8SAMSUNG
Electronics
355
•
LINEAR INTEGRATED CIRCUIT
LM239/A, LM339/A, LM2901, LM3302
ELECTRICAL CHARACTERISTICS
(Vec = 5V, Ta = 25°C, unless otherwise specified)
Characteristic
Symbol
Input Offset Voltage
VIO
Input Offset Current
110
Input Bias Current
Input Common Mode
Voltage Range
Supply Current
Test Conditions
2
7
Vo=1.4V, Rs=O
9
15
16
VICR
NOTE 1
2.3
50
NOTE 1
50
200
57
250
NOTE 1
200
500
NOTE 1
Icc
VIN = TTL Logic Swi ng
Vret = 1.4V, RRL = 5V, RL = 5.1 Kn
Response Time
t RES2
VRL =5V, RL=5.1Kn
Output Sink Current
ISink
V sat
Output Leakage
Current
Ileak
Differential Voltage
V ID
VIN_~1V,
VIN+ =OV, Vo~1,5V
Isink=4mA
VIN+ = 0
Vo=5V
VIN + = 1V
Vo =30V
NOTE 1
250
._-
1000
Vcc·1.5
Vcc ·2
25
100
1.1
2
350
1.4
6
VIN - ~ 1V, VIN+ = OV
NOTE 1
57
0
2.5
tREsT
100
300
0
2.0
Large Signal
Response Time
3
18
140
6
400
0
nA
nA
V
2.0
mA
30
VIm V
350
ns
1.4
p's
18
mA
140
700
0.1
Unit
mV
Vcc ·2
1.1
(for large swing)
20
40
Vcc· 1.5
1.6
RL~15Kn
2
Max
0
RL =00,
Vcc= 15V,
Min Typ
0
RL=oo, Vcc=30V
AVOL
Output Saturation
LM3302
Max
VICM =OV to Vcc =1.5V
Voltage Gain
Voltage
LM2901
Min Typ
400
700
0.1
mV
nA
1.0
1.0
p.A
36
28
V
NOTE 1 LM339/A: O~Ta~ + 70°C
LM239/A: - 25~Ta~ + 85°C
LM2901/3302: - 40 ~Ta< + 85°C
c8SAMSUNG
Electronics
356
LM239/A, LM339A, LM2901, LM3302 LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 1 SUPPLY CURRENT
2.2
Ta ~ - 40
1.8
:;(
...
~
ffia:
g;
1.4
1.2
/
0
i
::>
Ul
..,,;
;'
.8
/-
---
. --
. /~
1.6
§
_
... ~-
....
0
Fig. 2 INPUT CURRENT
120 r---,-----r--;---,--..,--~r-r-I-,
6_I-
1101-----+--+---+--+-----1-
~--I....... Tj=-25°C
~-d-Ta-25°C
--'""
70
.--.--
Ta= 85°C
-
....
I
__
---r---
f--t---
a_ +jOC
OO~~_~~_~~~~rI
50~~~a~=--±15=OC~~----1~-4--+----+-~
.6
.4
RLI""~
.2
o
-
oo~~~~~_r==:t::4===~~~r--80
Ta- 40°S-r--
1--"--
T
---- .-
V,,(ICM)=OV oc
Ru..(ICM)=1GIl
100 1------j--+----I----+--+--t----1r---_1
401------j==:~~--=~~,-----~!~----4~.-==b..~~-1
30 ~ra.:-+ is°c---I--+----I---+---+------1
20 i---------jif--_4-- ---+-----+------+--+--+------1
1
101------j--+----I----+--+--+---f----I
a
10
15
20
25
30
35
40
0~0--~--~10---1~5--~2~0--~25---3~0--~3~5~40
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Fig. 4 RESPONSE TIME FOR VARIOUS INPUT
OVERDRIVE·NEGATIVE TRANSITION
Fig. 3 OUTPUT SATURATION VOLTAGE
10'
--t-
l
Ta =25
0
•
OUT OF
SATURATION
10°
~
w
~
0
>
z
10-'
-Ta 85°C
0
40°C
Ta
~
6.0
_,~o-n
g;
~
--
-100
~
CJ
~ ~a~12boC
10-'
--
t---
-
1----1--
f-
-I--
---t--
--
\\
4.0
- fL
17
,,
2.0
omv
10-
• 10-'
10-'
i
10'
10°
10'
OUTPUT SINK CURRENT (mA)
,"T°'Fr
\
---
H
jrmv l5.om(
0.4
0.8
---
•
i
1.4
TIME (usee)
Fig. 5 RESPONSE TIME FOR VARIOUS INPUT
OVERDRIVE·POSITIVE TRANSITION
C('
-
w
I
CJ
~.
0
100
i
i
i
i
>
~
~
I
i
~
w
CJ
b
I
Ta-25 o
!
.§
0.41
5,Or-
0.81
TIME (usee)
c8SAMSUNG
Electronics
357
LM239/A, LM339/A, LM2901, LM3302
LINEAR INTEGRATED CIRCUIT
APPLICATION INFORMATION
The LM239 series includes four high gain, wide bandwidth devices which, like most comparators, can easily oscillate
if the output lead is inadvertently allowed to capacitively couple to the inputs via stray capacitance. That occurs
during the output voltage transitions, when the comparator changes state.
To minimize this problem, the PC board layout should be designed to reduce stray input-output coupling; reducing
the input resistors to less than 10 KO reduces the feedback signal levels and finally, adding even a small amount
(1 to 10mV) of positive feedback (hysteresis) causes such a rapid transition that oscillations due to stray feedback
are not possible.
It is a good design practic8 to ground all unused pins.
The differential input voltage may be larger than positive supply without damaging the device. Note that voltages more negative
than -O.3V should not be used: an input clamping diode can be used as protection.
The outputLM339 is the uncommitted collector of a NPN transistor with grounded emitter. This allows the device to be used
like any open-collector gate providing the OR-wide facility.
The output sink current capability is approximately 16 mA; if this limit is exceeded, the output transistor will come out of
saturation and the output voltage will rise very rapidly.
Under this limit, the output saturation voltage is limited by the approximately 600
TYPICAL APPLICATIONS
rsat
of the outpput transistor.
(Vee = + 15V)
Fig. 6 Basic comparator
Fig. 7 Non-inverting comparator with Hysteresis
5V
5V
3KO
+VREF
o------t
>--+--OVo
Vo
+VINcr-~~.........
10KO
Fig. 8 Inverting comparator with Hysteresis
3KIJ
+VIN 0 - - - - - 1
>--+--OVo
1Mil
c8SAMSUNG
Electronics
358
LM239/A, LM339/A, LM2901, LM3302
LINEAR INTEGRATED CIRCUIT
Fig. 10 Driving TTL
Fig. 9 Driving C/MOS
5V
5V
Fig. 12 OR gate
Fig. 11 AND gate
15V
15V
3KO
A
B
A·B·C
B
+1~C
+~C
o
0
"0" "1"
•
3KO
A
A+B+C
"0" "1"
Fig. 14 Squarewave oscillator
Fig. 13 Large fan·in AND gate
15V
15V
100KO
4.3KO
3KO
">-+----<.lVo
A·B·c·r
c8SAMSUNG
Electronics
~ ±Vee
f=100KHz
359
LM239/A, LM339/A, LM2901, LM3302
Fig. 1S ORing the outputs
LINEAR INTEGRATED CIRCUIT
Fig. 16 Peak audio level display
5800
15V
3KO
>--t---oVo
6800
IN
lKO
6800
>----~6800
Fig. 17 Zero crossing detector (single supply)
Fig. 18 Zero crossing detector (split supplies)
VINmln ... O.4V peak for 1% phase distortion (A 8)
15V
20
8.2KO
6.8KO
KO
01
c8SAMSUNG
Electronics
360
LM293/A, LM393/A, LM2903
LINEAR INTEGRATED CIRCUIT
DUAL DIFFERENTIAL COMPARATOR
8 DIP
The LM293 series consists of two independent voltage comparators
designed to operate from a single power supply over a wide voltage
range.
FEATURES
•
•
•
•
•
•
•
•
Single Supply Operation: 2V to 36V
Dual Supply Operation: ::t: 1V to ::t: 18V
Allow Comparison of Voltages Near Ground Potential
Low Current Drain 800J'A Typ
Compatible with all Forms of logic
Low Input Bias Current 2SnA l'yp
Low Input Offset Current ± SnA l'yp
Low Offset Voltage ::t: 1mV Typ
8 soP
9 SIP
BLOCK DIAGRAM
•
I
ORDERING INFORMATION
Device
Package
LM393N
LM393AN
8 DIP
LM393S
LM393AS
9 SIP
LM393D
LM393AD
8 SOP
LM293N
LM293AN
8 DIP
LM293S
LM293AS
9 SIP
LM293D
LM293AD
8 SOP
LM2903N
8 DIP
LM2903D
8 SOP
LM2903S
9 SIP
Operating Temperature
0- + 75°C
-25- +85°C
-40- +85°C
c8SAMSUNG
EIectrorics
361
LM293/A, LM393/A, LM2903
LINEAR INTEGRATED CIRCUIT
SCHEMATIC DIAGRAM
VccO~--------~~--------~~____~~
IN
(+) O---+---f
IN (-) Q------+---+------l--+------.j
____1---+--+---0
OUTPUT
05
06
GNOQ-----~--+_--~~-~----~--~+_----
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Power Supply Voltage
Vs
± 18 or 36
V
Differential Input Voltage
VID
36
V
Input Voltage
VI
-0.3 to +36
V
Output Short Circuit to GND
Power Dissipation
Continuous
PD
570
mW
Operating Temperature
LM393/LM393A
LM293/LM293A
LM2903
Topr
0- +70
-25- +85
-40- +85
°C
Storage Temperature
Tstg
-65- + 150
°C
c8SAMSUNG
Electronics
362
LINEAR INTEGRATED CIRCUIT
LM293/A, LM393/A, LM2903
ELECTRICAL CHARACTERISTICS
(Vee = 5V, Ta= 25°C, unless otherwise specified)
LM293AJLM393A LM293/LM393
Characteristic
Test Conditions
Symbol
Input Offset Voltage
V IO
Input Offset Current
ho
Min Typ
±1
V leM = OV to Vee -1.5V
Vo = 1.4V, Rs=O
NOTE 1
NOTE 1
65
Supply Current
lee
Voltage Gain
NOTE 1
V IN = TTL Logic Swing
V,ef = 1.4V, V RL = 5V, RL = 5.1 KO
Response Time
tRES2
V RL =5V, RL=5.1KO
Output Sink Current
Isink
VIN-~1V,
V 1N + =OV, Vo~1.5V
Output Saturation Voltage
V sat
VIN-~1V,
V 1N + =OV
Output Leakage Current
heak
Isink =4mA
V 1N - =0,
V in + = 1V
65
Vee-1.5
0
Vee-1.5
Vee-2
0
Vee-2
0.6
1
0.6
1
0.8
2.5
0.8
2.5
50 200
160
V o =5V
400
0.1
mA
nS
J.l.S
18
mA
160
400
700
0.1
1.0
V
1.4
700
NOTE 1
Vo =30V
6
18
nA
V/mV
350
1.4
6
nA
250
400
350
mV
±50
± 150
250
Vee = 15V, RL~ 15KO(for large Va swing) 50 200
t RES1
±5
±50
Unit
±5
±9.0
0
RL=OO Vee = 30V
Large Signal Response
Time
Max
0
RL=oo
Av
±1
400
NOTE 1
VieR
±2
± 150
18
Input Common Mode
Voltage Range
Min Typ
±4.0
±5
Input Bias Current
Max
mV
nA
1.0
J.l.A
NOTE 1
LM393/A: O:sTa:s + 70°C
LM293/A: - 25:s Ta:s + 85°C
LM2903: -40:sTa:s +85°C
c8SAMSUNG
Electronics
363
•
LINEAR INTEGRATED CIRCUIT
LM293/A, LM393/A, LM2903
ELECTRICAL CHARACTERISTICS
Characteristic
Input Offset Voltage
Input Offset Current
Input Bias Current
V ICM =OV to Vcc - 1.5V
Vo=1.4V, Rs=O
LM2903
Min
Supply Current
lec
Max
± 1
±7
±9
±15
±5
±50
NOTE 1
±50
±200
65
Is
VICR
Typ
NOTE 1
110
Input Common Mode
Voltage Range
Voltage Gain
Test Conditions
Symbol
VIO
(V cc =5V, Ta=25°C, unless otherwise specified)
NOTE 1
0
Vcc·1.5
0
Vcc·2
RL=OO
RL=OO Vec = 30V
Vcc = 15V, RL~ 15Kn (for large Vo swing)
nA
0.6
1
1
2.5
nA
V
mA
100
V/mV
tRES1
V IN = TTL Logic Swing
V ref =1.4V, V RL =5V, RL=5.1Kn
350
nS
Response Time
tRES2
VRL =5V, RL=5.1Kn
1.5
p.S
Output Sink Current
ISink
V IN -
16
mA
Output Saturation Voltage
V sat
VIN - ~ 1V, VIN + = OV
Isink =4mA
Output Leakage Current
Ileak
V IN - = 0,
V in + = 1V
Large Signal Response
Time
Av
~1V,
V IN + =OV, Vo5.1.5V
25
mV
250
500
NOTE 1
Unit
6
160
NOTE 1
Vo=5V
Vo=30V
400
700
0.1
mV
nA
1.0
p.A
NOTE 1
LM393/A: O:5Ta:5 + 70°C
LM293/A: -25$Ta$ +85°C
lM2903: -40$Ta$ +85°C
c8SAMSUNG
Electronics
364
LM293/A, LM393/A, LM2903
LINEAR INTEGRATED CIRCUIT
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 2 INPUT CURRENT
Fig. 1 SUPPLY CURRENT
1.2
,...--r--r--,..----,---,----r----r---,
120
-.--- -
110
100
Ta=
90
e.§.
Ie
..s
.8
I-
~
a:
:::l
§
.6
(J
i
I/)
./
80
...",.
I-
~
(J
I-
~
~
.4
L5,~a= -~~
70
~
....... ......
50
,
40
1..---
30
.2
f..-:
-.-~.Ta=25'v
~
~
60
-;;:::-.
t::--
-- -----
I-~
r-==-- ~Ta-85'C
20
V1N{CM)
10
R'N,CM)
10
15
20
25
30
35
o
40
o
15
10
SUPPLY VOLTAGE (II)
20
25
30
= OVoc
~ 1Gil
35
40
SUPPLY VOLTAGE (II)
Fig. 4 RESPONSE TIME FOR VARIOUS INPUT
OVERDRIVE·NEGATIVE TRANSITION
Fig. 3 OUTPUT SATURATION VOLTAGE
10'
I
I
>-
I
w
,
Cl
~0
10'
I:::l
Q.
~
:;
~~
Ta=85'C
0
10-'
z
0
-
~~
~
Ta=25'C
~
w
~
0
4.0
>
I:::l
Q.
L
10- 3
10-'
,
6.0
Cl
V
10- 2
100
Ta= -40'C
"-'iI'
I/)
I
I
>
~
W
Cl
>
T. =25'
I
.§.
I:::l
0
10u
10 '
..
10'
10'
OUTPUT SINK CURRENT (rnA)
I)'
",
\
2.0
NPUT OVE DRIVE
5 0 t t 20mV 5.0my
0.4
0.8
1.4
TIME (usee)
Fig. 5 RESPONSE TIME FOR VARIOUS INPUT
OVERDRIVE·POSITIVE TRANSITION
Tl=25.1c
>-
.§.
w
Cl
~
_.
100
0
>
I:::l
Q.
~
~
6.0
w
Cl
~
4.0
0
>
I:::l
Q.
I:::l
0
2.0
/
..... 1'
11 pUT fVERPRIVE
f'"
bLv.:mr-Ar-
f--
j
0.4
0.8
TIME (usee)
c8SAMSUNG
Electronics
1.4
365
LM293/A, LM393/A, LM2903
LINEAR INTEGRATED CIRCUIT
APPLICATION INFORMATION
The LM293 series are high gain, wide bandwidth devices which, like most comparators, can easily oscillate if the
output is inadvertently allowed to capacitively couple to the inputs via stray capacitance. That occurs during the
output voltage transitions, when the comparator changes state.
To minimize this problem, the PC board layout should be designed to reduce stray input-output coupling; reducing
the input resistors to less than 10 KO reduces the feedback signal levels and finally, adding even a small amount
(1 to 10mV) of positive feedback (hysteresis) causes such a rapid transition that oscillations due to stray feedback
are not possible.
It is a good design practice to ground all unused pins.
The differential input voltage may be larger than positive supply without damaging the device. Note that voltages more negative
than -0.3V should not used: an input clamping diode can be used as protection.
The output of the LM239 series is the uncommitted collector of a NPN transistor with grounded emitter. The allows
the device to be used like any open-collector gate providing the OR-wide facility.
The output sink current capability is approximately 16mA; if this limit is exceeded, the output transistor will come out of saturation and the output voltate will rise very rapidly.
Under this limit, the output saturation voltage is limited by the approximatively 600 rSal of the output transistor.
TYPICAL APPLICATIONS
(Vee=
+ 15V)
Fig. 7 Non·inverting comparator
with Hysteresis
Fig. 6 Basic comparator
Fig. 8 Inverting comparatoTi
with Hysteresis
+Vee
+vcc
3KO
+VREF
+VIN
Fig. 9 Driving C·MOS
+5V
c8SAMSUNG
Electronics
3KO
TVee
+VIN
10KO
3KO
1M{!
Fig. 10 Driving TTL
+5V
366
LM293/A, LM393/A, LM2903
LINEAR INTEGRATED CIRCUIT
APPLICATION INFORMATION (continued)
Fig. 11 AND gate
Fig. 12 OR gate
+Vcc
+Vcc
3Kf!
3x100Kf!
3x 100kf!
......
>-~-----10A·B·C
Ao--~
B
o--~~>----~-I~~
A
o---~,.-,
B
o-~~~~----~~
c
+Vcc C o-_~...--'
:~
"a"
o-..J
"a"
"1"
"1"
FOig. 14 Squarewave oscillator
Fig. 13 Large fan·in AND gate
+Vcc
•
+Vcc
+V::ruVo
f=100KHz
+Vcc ----.
a -.J A'o----...t-=--+---4:~
"a"
"1'" B G--MI--....
Co----N-"::"":";
D 0--......----'
Fig. 15 Pulse generator
Fig. 16 One·shot multivibratoi
+Vcc
+Vcc
15KO
R1
1MO
R2
D1
ol
1N914
D2
,n<:f). ~n -V+
6p.S.J ~ L
to 11
12
10
10Kfl
PW
tms-:r-E"
>--+--0
Va
to
v+
11
Vo
c8SAMSUNG
Electronics
367
LINEAR INTEGRATED CIRCUIT
LM311
8 DIP
VOLTAGE COMPARATOR
The LM311 series is a monolithic, low input current
voltage comparator.
The device is also designed to operate from dual or
single supplies voltage.
FEATURE
•
•
•
•
•
•
Low input bias current: 2S0nA (Max)
Low input offset current: SOnA (Max)
Differential Input Voltage: ± 30V.
Power supply voltage: single 5.0V supply to ± 15V.
Offset voltage null capability.
Strobe capability.
8 SOP
BLOCK DIAGRAM
GND
1
ORDERING INFORMATION
7 OUTPUT
6 BALANCE/STROBE
Device
Package
LM311N
8 DIP
LM311D
8 SOP
Operating Temperature
0-+ 70
0
e
5 BALANCE
SCHEMATIC DIAGRAM
~--------'-~--~~------~~---OVcc
~-I---.\--_--n
OUTPUT
IN (+)
IN ( - ) o . r - -......
'-----_____.--
a..
30
~AISED
u
300
rn
I-
'~
1
r---......
ffi
§
0
~
20
-,
-
NORMAL
-25
25
.-1-.
50
' - - - . NORMAL
-t---I
o
100
75
-50
-25
'JId-:
iiH
J' -----; i-'
w
CI
.....
~
g
It
10
-
---
I-
~
:!S
5
_.-
-t=-
7
. /~--
- -1--
a
jU
!
I
-
:
I
10K
,I
ii
7
I:!
ex:
'--
!fl100
"""
iii
-
I-
~
75
!!!:
'-
50
SIOS
10M
-16 -12
0
4
12
16
Rg. 6 OUTPUT VOLTAGE VS DIFFERENTIAL
50
-
-1.0
~
-- ---
€
40
~
g
0
-~~Lr~ER
--
~
~
---
I-
:::>
0
I
30
I-
0.2
l
w
:IE
U
VS=3O~
Ta=25°C
CI
-1.5
OA
-
NORJAL OU.fPUT
RL=1KII
V++=4OV
z
0
-4
DIFFERENTIAL INPUT VOLTAGE (V)
f--~G~~~~%~~AJES
:IE
::;
:IE
:IE
-8
60
€
0
- -c--
I
1M
Rg. 5 COMMON MODE LIMITS VS TEMPERATURE
w
c
..
I
25
V+
~
--
125
INPUT RESISTANCE !(II)
-0.5
I
.-
~
TYPICAL
fffHl
IVS=±15V
To=25°C
c-- 1 - - -
I
'"
~ 150
6
~.-
JJ;-L--
200 I-- 1----
175 I-- - - -
-nill!iI
I
100K
100
Rg. 4 INPUT BIAS CURRENT VS DIFFERENTIAL
=25°6
/
/
----
:1
--1--
0
I
~-
---
75
225
,II,
MAXIMUM'
/
1-
0
II' _2
./
--- .
Iii
~
!!!:
I
---1'-0.
50
TEMPERATURE (OC)
Rg. 3 OFFSET VOLTAGE VS INPUT RESISTANCE
100
.-...
25
TEMPERATURE (OC)
>
.§.
"-...
10
I
-50
I-
..............
~
!!!:
!!!:
100
±15V'
--
20
_OUTPUT
RL=60011
-35
-15
25
45
55
TEMPERATURE (OC)
c8SAMSUNG
Electronics
85
105
125
-1.0
--
\.
10
V-55
""r\. II
\
-0.5
J\ '-
..
0.5
-
1.0
DIFFERENTIAL INPUT VOLTAGE (mV)
370
LM311
LINEAR INTEGRATED CIRCUIT
Fig. 7 SATURATION VOLTAGE VS CURRENT
Fig. 8 SUPPLY CURRENT VS TEMPERATURE
0.8
J
s ;±15V
0.7 I--- TaJ50 C
~
./
./
0.6
III
CI
~
0.5
§!
Z
2
0.4
~
:::I
!c
./
0.3
V
./
V
V
./
-
---
V"
I/)
t"-_
1/
0.2
/
o
o
--...
r--- r-
-
t---. 1'-
POSITIVE AND
~G¥~J~V~I~~iPLy.
1/
0.1
POSITIVE SUPPLY·
~LOW
1
10
20
30
40
-25
50
I-
75
50
100
TEMPERATURE (OC)
OUTPUT CURRENT (mA)
Fig. 9 LEAKAGE CURRENTS VS TEMPERATURE
Fig. 10 SUPPLY CURRENT VS SUPPLY VOLTAGE
•
TaL25 0 C
L/
POSITIVE SUPPLY
(OUTPUT HIGH)
.
/'
l.-/'
--1--- t - - - 1---
~rOSITIVEAND
NEGATIVE SUPPLY
(OUTPUT LOW)
t - - - - iNPUT wi:"1.5V __
1
10-11~
25
35
0
45
55
65
10
75
15
20
25
30
SUPPLY VOLTAGE (V)
TEMPERATURE (OC)
Fig. 11 OUTPUT SATURATION VOLTAGE
Fig. 12 OUTPUT LIMITING CHARACTERISTICS
·8~----~----~----~------r---~
120
1.2
f\
C
100
.§.
ffi
II:
~
r-!J
80
~
80
Ii:
o
0
1.0
0-9"
\
C}-9,
~
U
;
oS'-Y.
°0"O(/~
~"9~1t"
--.c:::
./
o
,/
.a.\O~
~ fbr:,\~~
~~\>-O~
:I:
UI
0.6
0 .4
0 .2
/
'I
o
10
c8SAMSUNG
Electronics
0.8
.i'V~~
20
OUTPUT CURRENT (mA)
/
15
OUTPUT VOLTAGE (V)
371
LINEAR INTEGRATED CIRCUIT
LM311
TYPICAL APPLICATIONS
Fig. 1 Switching Power Amplifier
,-----------~--------------~------------~------------__Ovcc
02
2N6125
OUTPUT---4
620
620
3
04
2
2N6121
300K
300K
510
39K
39K
510
15K
'---------------------4-~t_----+-------------------------I--<~YtIi>---OINPUT
REFERENCE
'----------------------------~----------------------------~~~Mr_o
15K
Fig. 2 Relay Driver with Strobe
Fig. 3 Digital Transmission Isolator
r--------4~------~------~~vcc
1.0K
~7----+--o~~PUT
c8~SUNG
372
II
NE555C/I
LINEAR INTEGRATED CIRCUIT
SINGLE TIMER
8 DIP
The N E555 series are a monolithic integrated circuit and high
stable device for.generatingaccurate time dE-lay or oscillation.
The NE5551 is characterized for operation from - 40°C to + 85°C,
aAd the NE555C from O°C to 70°C.
FEATURES
•
•
•
•
•
•
•
Turn off time less than 2/ls
Maximum operating frequency greater than 500KHz
Timing from microseconds to hours
Operates in both astable and monostable modes
High output current
Adjustable duty cycle
Temperature stability of 0.005% per °C
8 soP
APPLICATIONS
•
•
•
•
•
•
Precision timing
Time delay generation
Pulse generation
Pulse position modulation
Sequential timing
Missing pulse detector
ORDERING INFORMATION
BLOCK DIAGRAM
Vee
Device
Package
NE555CN
8 DIP
NE555CD
8 SOP
NE5551N
8 DIP
NE5551D
8 SOP
Operating Temperature
0- + 70°C
I
-40- + 85°C
Control Voltage
R1
R2
Comparator
c8SAMSUNG
Electronics
375
LINEAR INTEGRATED CIRCUIT
NE555C/I
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Supply Voltage
Lead Temperature (soldering 10 sec)
Power Dissipation
Operating Temperature Range NE555C
NE5551
Storage Temperature Range
Symbol
Value
Unit
Vee
T1ead
Po
Topr
16
300
600
0- +70
-40- +85
-65- + 150
V
·C
mW
·C
·C
·C
TsIg
ELECTRICAL CHARACTERISTICS
(Ta=25OC, Vcc=5-15\1, unless otherwise specified)
Characteristic
Supply Voltage
Supply Current
'l(low stable)
Symbol
Icc
MTl
'Timing Error
(astable)
21nitial Accurary
Drift with Temperature
Drift with Supply Voltage
MT2
Threshold Voltage
Ve
VTH
Min
Typ
Max
Unit
16
V
Vee = 5V, RL =00
3
6
mA
Vee = 15V, RL =00
10
15
mA
RA = 1KG to
100KG
C =0.1p.F
1.0
50
0.1
3.0
%
ppm/·C
%IV
4.5
Vee
'Timing Error
(Monsotable)
21nitial Accurary
Drift with Temperature
Drift with Supply Voltage
Control Voltage
Test Conditions
RA = 1 K to
100KG
C=0.1p.F
0.5
%
ppm/oC
%IV
2.25
150
0.3
Vee = 15V
9.0
10.0
11.0
V
Vee = 5V
2.6
3.33
4.0
V
Vee = 15V
10.0
V
Vee = 5V
3.33
V
0.1
0.25
p.A
Vee=5
1.1
1.67
2.2
V
VTR
Vee = 15V
4;5
5
5.6
V
Trigger Current
IrR
VT=OV
0.5
2.0
p.A
Reset Voltage
V RE
0.7
1.0
V
Reset Current
IRE
0.1
0.4
mA
'3Threshold Current
IrH
Trigger Voltage
VTR
Trigger Voltage
c8SAMSUNG
Electronics
0.4
376
LINEAR INTEGRATED CIRCUIT
NE555C/I
ELECTRICAL CHARACTERISTICS
(Ta =25°C, VCC =5 -15V, unless otherwise specified)
Characteristic
Symbol
Output Voltage (low)
VOL
Output Voltage (high)
VOH
Test
Conditions
Typ
Max
Unit
Vee=15V
Isink =10mA
Isink = 50mA
0.1
0.4
0.25
0.75
V
V
Vee = 5V
Isink =5mA
0.25
0.35
V
Min
Vee = 15V
Isource = 200mA
Isource = 100mA
12.75
Vee=5V
Isource = 100mA
2.75
12.5
13.3
V
V
3.3
V
Rise Time of Output
Tr
100
nsec
Fall Time of Output
T,
100
Discharge Leakage Current
10
20
nsec
100
nA
Notes:
1. Supply current when output is high is typically 1mA less at Vee =5V.
2. Tested at Vee =5.0V and Vee =15V
3. This will determine the maximum value of RA +Ra for 15Voperation, the max total R=20MO, and for 5V operation the
max total R=6.7Mfl.
APPLICATION CIRCUIT
Cl
GND
R3
RB
RA
Rl
Vee
Flip-Flop
----------------------------~3~--------------~
Output
c8SAMSUNG
Electronics
377
I
NE555C/I
LINEAR INTEGRATED CIRCUIT
APPLICATION NOTE
The application circuit shows astable mode.
Pin 6 (threshold) is tied to Pin 2 (trigger) and Pin 4 (reset) is tied to Vee (Pin 8).
The external capacitor C, of Pin 6 and Pin 2 charges through RA, Rs and discharges through Rs only.
In the internal circuit of the NE555 one input of the upper comparator is the 2/3 Vee (*R, = R2 = R3), another input
if it is connected Pin 6 .•
As soon as charging C, is higher than 2/3 Vee, discharge transistor 0, turns on and C, discharges to collector of
transistor 0,.
Therefore, the flip-flop circuit is reset and output is low.
One input of lower comparator is the 1/3 Vee, discharge transistor 0, turn off and C, charges through RA and Rs.
Therefore, the flip-flop circuit is set and output is high.
So to say, when C, charges through RA and Rs output Is high and when C, discharges through Rb output is low
The charge time (output is high) T, is 0.693 (RA +Rs) C, and the discharge time (output is low) T2 is 0.693 (Rs C,).
(In Vcc=1/3Vcc -0.693)
Vec-213Vee
Thus the total period time T is given by
T=T, +T2=0.693 (RA+2Rs).C,.
Then the frequency of astable mode is given by
f=..:!..=
1.44
T (RA +2Ra)C,
The duty cycle is given by
D.C=T2=~
T
RA+2Ra
If you make use of the N E556 you can make two astable modes.
If you want another application note, request information on our timer Ie application circuit designer.
c8SAMSUNG
Electronics
378
LINEAR INTEGRATED CIRCUIT
NE556C/I
DUAL TIMER
The NE556 series dual monolithic timing circuits are highly stable controllers capable of producing accurate time delays or oscillation.
The NE556 is a dual NE555. Timing is provided by an external resistor
and capacitor for each timing function.
The two timers operate independently of each other, sharing only Vee
and ground.
The circuits may be triggered and reset on falling waveforms. The output structures may sink or source 200 mA.
The N E5561 is characterized for operation from - 40° C to + 85 ° C, and
the NE556C from O°C to 70°C.
14 DIP
14 soP
FEATURES
•
•
•
•
•
•
•
•
Direct replacement for NE556
Replaces two N E555 timers
Operates in both astable and monostable modes
High output current
TTL compatible
Timing from microsecond to hours
Adjustable duty cycle
Temperature stability of 0.005% per °C
ORDERING INFORMATION
APPLICATIONS
•
•
•
•
•
Precision timing
Pulse shaping
Pulse width modulation
Frequency division
Traffic light control
•
•
•
•
•
Sequential timing
Pulse generator
Time delay generator
Touch tone encoder
Tone burst generator
BLOCK DIAGRAM
c8SAMSUNG
Electronics
Device
Package
NE556CN
14 DIP
NE556CD
14 SOP
NE5561N
14 DIP
NE5561D
14 SOP
Operating Temperature
0- + 70°C
-40- +85°C
379
I
LINEAR INTEGRATED CIRCUIT
NE556C/I
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic
Symbol
Value
Unit
Vee
T1ead
Po
Topr
16
300
600
0- +70
-40- +85
-65 -+150
V
°C
mW
°C
°C
°C
Supply Voltage
Lead Temperature (soldering 10 sec)
Power Dissipation
Operating Temperature Range NESS6C
NESS61
Storage Temperature Range
T stg
ELECTRICAL CHARACTERISTICS
(Vee = +5V to + 15V, unless otherwise specified)
Characteristic
Supply Voltage
*1 Supply Current (Two timers)
(low state)
*2 Timing Error (monostable)
Initial Accuracy
Drift with Temperature
Drift with Supply Voltage
Control Voltage
Symbol
Icc
MT1i
Ve
VrH
*3 Threshold Current
IrH
Trigger Voltage
VrR
Trigger Current
IrR
*5 Reset Voltage
V RE
Reset Current
IRE
c8SAMSUNG
Electronics
VOL
Min
lYP
4.5
Vee
Threshold Voltage
Output Voltage Low
Test Conditions
Vee =5V, RL = 00
Vee =lSV, RL=oo
5
16
RA =2KO to 100KO
C=O.lJAF
T = 1.lRe
Max
16
V
12
30
mA
mA
%
0.75
50
0.1
ppm/oC
%N
Vee=15V
9.0
10.0
11.0
Vee=5V
2.6
3.33
4.0
Vee=15V
10.0
Vee=5V
3.33
Unit
V
V
V
V
30
250
nA
V
Vee=15V
4.5
5.0
5.6
Vee=5V
1.1
1.67
2.2
V
0.5
2.0
pA
Vr=OV
0.4
Vee=15V
'sink=10mA
's;nk=50mA
'sink =100mA
'sink =200mA
Vee=SV
Isink =8mA
'sink=5mA
0.7
1.0
V
0.1
0.6
mA
0.1
0.4
2.0
2.5
0.25
0.75
V
V
V
V
0.25
0.15
0.3
0.25
3.2
V
V
380
NE556C/I
LINEAR INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Vee = +5V to + 15V, unless otherwise specified)
Characteristic
Output Voltage (high)
Rise Time of Output
Symbol
VOH
Min
Typ
Vee=15V
Isource =200mA
Isource =100mA
12.75
12.5
13.3
Vee=5V
Isource = 100mA
2.75
Test Conditions
nsec
100
300
nsec
20
100
nA
1.0
10
0.2
2.0
Fall Time of Output
T,
Discharge Leakage Current
10
MeH
MT2
RA, Rs =1kn to 1QOkn
C=0.1J,lf
Vee=15V
V
300
100
*2 Timing Error (astable)
Initial Accuracy
Drift with Temperature
Drift with Supply Voltage
Unit
V
V
3.3
Tr
*4 Matching Characteristics
Initial Accuracy
Drift with Temperature
Drift with Supply Voltage
Max
2.25
150
0.3
%
ppm/oC
0.5
%N'
%
ppm/oC
%N
Notes:
Supply current when output is high is typically 1.0mA less at Vee =5V.
*2. Tested at Vee=5V and Vee=15V
*3. This will determine the maximum value of RA + Rs for 15V operation.
The maximum total R=20MO, and for 5V operation the maximum total R=6.6Mn.
*4. Matching characteristics refer to the difference between performance characteristics of each timer section in
the monostable mode.
*5. As reset voltage lowers, timing is inhibited and then the output goes low.
* 1.
c8SAMSUNG
Electronics
381
I
LINEAR INTEGRATED CIRCUIT
NE558C/I
QUAD TIMER
16 DIP
The NE558 series are monolithic Quad Timers which can
be used to produce four entirely independent timing
functions. These highly stable, general purpose controllers can be used in a monostable mode to produce
accurate time delays, from microseconds to hours. The
time is precisely controlled by one external resistor and
one capacitor in the time delay mode. A stable mode
can be operated by using two of four time sections.
The N E5581 is characterized for operation from - 40°C
to + 85°C, and the NE558C from O°C to 70°C.
16 soP
FEATURES
•
•
•
•
•
Wide supply voltage range: 4.SV to 16V
100mA output current per section
Edge triggered without coupling capacitor
Time period equals RC
Output independent of trigger conditions.
ORDERING INFORMATION
APPLICATIONS
•
•
•
•
Quad one-shot
Sequential timing
Precision timing
Time delay generation
Device
Package
NE558CN
16 DIP
NE558CD
16 SOP
NE5581N
16 DIP
Operating Temperature
0- + 70°C
-40- +85°C
BLOCK DIAGRAM
OUTPUT D
TIMING D
TRIGGER D
OUTPUT A
TIMING A
TRIGGER A
c8SAMSUNG
Electronics
RESET
CONTROL
VOLTAGE
GROUND
Vee
TRIGGER C
TRIGGER B
TIMING C
OUTPUT C
TIMING B
OUTPUT B
382
NE558C/I
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Supply Voltage
Lead Temperature (soldering 10 sec)
Power Dissipation
Operating Temperature, Range NE556C
NE5561
Storage Temperature Range
Symbol
Value
Unit
Vee
T'ead
PD
Topr
16
300
600
0- +70
-40- +85
-65 - + 150
V
°C
mW
°C
°C
°C
TSl9
ELECTRICAL CHARACTERISTICS
(V ee =5V-15V, Ta=25°C unless otherwise specified)
Characteristic
Test Conditions
Symbol
Supply Voltage
Vee
Supply Current
lee
Min
=
MT
Max
16
V
16
36
mA
±2
5
%
4.5
Vee = 15V, reset voltage = 15V
Timing Error (T RC)
Initial Accuracy
Drift with Temperature
Typ
R
=2Kn to 100Kn, C =1/LF
Drift with Supply Voltage
1Trigger Voltage
V TR
Vee = 15V
1Trigger Current
IrR
Trigger voltage
2
Reset Voltage
VRE
Reset
2
Reset Current
IRE
Reset
0.8
=OV
0.8
Unit
30
150
PPM/OC
0.1
0.9
%/V
1.5
2.4
V
5.0
100
/LA
1.5
2.4
V
50
500
/LA
Threshold Voltage
VTH
0.63 X Vee
V
Threshold Current
III
15
nA
30utput Voltage
VOUT
IL= 10mA
0.1
0.4
k= 100mA
1.0
2.0
500
Output Leakage Current
IOL
10
Propagation Delay Time
Tp
1.0
V
nA
/LS
Rise Time
Tr
IL= 100mA
100
nS
Fall Time
TI
IL= 100mA
100
nS
NOTES: 1. The trigger functions only on the falling edge of the trigger pulse only after previously being high. After
reset the trigger must be brought high and then low to implement triggering.
2. For reset below 0.8V, outputs set low and trigger inhibited.
3. Output structure is open collector which requires a pull up resistor to Vee to sink current.
The output is nomally low sinking current.
c8SAMSUNG
Electronics
383
I
NE558C/I
LINEAR INTEGRATED CIRCUIT
APPLICATIONS
Fig. 1 Long·Time Delay
Fig. 2 Timing Chart
Vcc~r-T-----~~------~~----~-'
TRIGGER'lJ
OUTPUT
T
OUTPUT 4
TRIGGER
. . _______
~'l
:::~:~~
~~~t-OU-TP-UT"'T"f=OUTPUT~
TOELAY: 3(R1C)
TOUT: R2C2
Fig. 3 Ring Counter
START
RESET 0---t----'-=+-------=+-------=4-------'-"-'
10K
Fig. 4 TII11lng Chart
START
RESET
L
01
c8SAMSUNG
Electronics
.
384
KS555
CMOS INTEQRATED CIRCUIT
8 DIP
CMOS SINGLE TIMER
The KS555 is a CMOS timer with improved performance
over a standard bipolar one. Due to its high-impedance
inputs, it is capable of producing accurate time delays
and oscillations with less expensive (smaller) timing
capacitors than a standard bipolar timer.
Its dramatic advantages over bipolar ones are very low
power consumption and wide operating voltage range
especially during stable low voltage operations.
8 SOP
FEATURES
• Low power consumption
• Pin to pin operation with bipolar
timer in most cases
• Extremely low trigger, threshold,
and reset pin current
• High·speed operation (500KHz)
• Stable low voltage operation
(possible 1.SV operation with most samples)
• Wide operating voltage range: 2 to 18V
• High output source/sink driver meet TTL/CMOS
• Immunized to static charge with inner protection
devices
APPLICATIONS
•
•
•
•
•
•
•
Precision Timing
Pulse Generation
Sequential Timing
Time Delay Generation
Pulse Width Modulation
Pulse Position Modulation
Missing Pulse Detector
ORDERING INFORMATION
Device
SCHEMATIC DIAGRAM
Vee
(8)O--~_--------r----r------'
CONTROL (5)
Package
KS555N
8 DIP
KS555D
8 SOP
Operating Temperature
-20 _+85°C
Vee (8)
O----~---I
THRESHOLD (6)0----+-------1
TRIGGER (2)0----+----1
GND
c8SAMSUNG
Electronics
385
•
CMOS INTEGRATED CIRCUIT
KS555
BLOCK DIAGRAM
Vee
R
THRESHOLC'
lO------<.--~
~-__~
>O----() CUTPUT
3
CONTROL
VOLTAGE
P
7J DISCHARGE
GN~t
TRIGGEP
COMPARATOR
R
B
GND 1
This block diagram reduces the circuitry down to its simplest equivalent components. Tie down unused inputs.
R = 1OOKQ ± 20% Typ.
TRUTH TABLE
l
I
Threshold
Voltage
Trigger
Voltage
Don'teare
>2/3 (Vee)
Don't Care
Reset
- --- -
> 1/3 (Vee)
<1/3(V~e)-=2~ > 1/3(Vee) -
----~--
'1
Don't Care
2/3(Vee)
< 1/3 (Vee)
Low
---
High
--_
..
_-
Discharge
Switch
Low
On
---------
----1--
Low
-- - - - - - - -
High
- - - -1-----
High
Output
On
---
t---~~~~-~
Stable
Stable
---~-~
1----
High
Off
Note: RESET will dominate all other input.TRIGGER will dominate over THRESHOLD.
ABSOLUTE MAXIMUM RATINGS
Characteristic
(Note 1)
Symbol
Supply Voltage
Vee
Input Volage
(Trigger, Control Voltage,
Threshold and Reset)
VIN
-0.3
Value
Unit
18
V
Vee+0.3
V
Power Dissipation
PD
200
mW
Operating Temperature Range
Topr
-20- +85
°C
Storage Temperature Range
Tstg
-65 - + 150
°C
Note 1: Stresses above those listed under absolute maximum rating may cause permanent damage to the device.
@SAMSUNG
Electronics
386
KS555
CMOS INTEGRATED CIRCUIT
ELECTRICAL CHARACTERISTICS
(Ta = 25°C, Vee = 2 to 15V, unless otherwise specified)
Characteristic
Supply Voltage Range
Symbol
Vee
Supply Current
lee
Timing Error
MT
Initial Accuracy
Drift With Temperature
Test Conditions
- 20°C
Lead Temperature
(Soldering 10 sec)
T lead
300
°C
Power Dissipation
Po
600
mW
Operating Temperature Range
Topr
0-+70
°C
Storage Temperature Range
T stg
-65-+150
°C
ELECTRICAL CHARACTERISTICS
(Ta = 25°C, Vee = 5V, refer to application circuit unless otherwise specified)
Characteristic
Symbol
Supply Voltage
Vee
Supply Current
Icc
Control Voltage
Test Conditions
Threshold Current
Trigger Voltage
Typ
3
Vee = 15V
VTH
p.A
Vee = 15V
Vee = 15V
Reset Current
IRE
50
IOL=5mA
0.1
IOL=8mA
0.15
Vee =15V
IOL= 10mA
0.1
Vee = 15V
IOL=50mA
0.5
Vee = 15V
IOL= 100mA
4.5
IOH = -2mA
4
IOH= -1mA
IOH= -5mA
IOH= -10mA
pA
1
V
pA
V
1
IOH= -1mA
Vee = 15V
V
5
50
VOH
pA
1.67
0.7
VOL
V
10
50
ITH
VTR
V
3.33
IrR
Electronics
V
10
VRE
c8SAMSUNG
18
3.33
Ve
Reset Vpltage
High Level Output Voltage
Unit
480
Trigger Current
Low Level Output Voltage
Max
240
Vee= 15V
!
( Threshold Voltage
Min
14.8
14
12.7
V
395
•
CMOS INTEGRATED CIRCUIT
KS556
ELECTRICAL CHARACTERISTICS
(Continued)
Characteristic
Symbol
Initial Error of Timing Interval
TEl
Supply Voltage Sensitivity of
Timing Interval
TES
Rise Time
Tr
Fall Time
Tf
Fmax
RA = 4700, RB = 2000
CT =200pF
Maximum Astable Oscillation
Test Conditions
Typ
Min
Max
Unit
1
%
0.1
%IV
RL = 10MO, CL= 10pF
20
nS
RL = 10MO, CL= 10pF
20
nS
2
MHz
Vee=5 to 15V
RA=RB=1 to 100K
CT =0.1j.tF
APPLICATION CIRCUIT
1) Astable
The circuit can be connected to trigger itself and free runs as a mutivibrator. The external capacitor charges
through RA and RB and discharges through RB only. Thus, the duty cycle may be precisely set by the rajo of these
two resistors. In this mode of operation, the capacitor charges and discharges between 1/3 Vee and 2/3 Vee. As
in the trigger mode, the charging and discharging times, and therefore the frequency are essentially independent
of the supply voltage. This oscillation frequency is given by
F = 11T = 1.44/(RA + 2*R B)/CT
Voo
;>
OPEN
,J
~
o
"'±
(14)
Voo
CONT
~
(1.13)
·~RL (1K)
RESET
DISCH
KS556
OUT
RB !>
.~
(2.12)
(5.9)
,.. OUTPUT
Ie",:
OpF)
. - - THRES
(6.8)
TRIG
-I.-
GND
;h(7)
c8SAMSUNG
Electronics
396
CMOS INTEGRATED CIRCUIT
KS556
2) Monostable
In this operation mode, the timer functions as one shot. Initially, the external capacitor (C) is held discharged
by a transistor inside timer. Upon application of a negative trigger pulse to trigger pin the flip flop is set which
releases the short circuit across the external capacitor and drives and output high.
The voltage across the external capacitor now increases exponentially with time constant T = RA X C. When the
voltage across the extemal capacitor equals 2/3 x Vee, the comparator resets the flip flop, which in turn discharges
the capacitor rapidly and also drives the output to its state.
voo
()
OPEN
~
13.,
01"1
,,1
(14)
Voo
CONT
RL (1K)
(4.10)
-------<:
RESET
(1.13)
DISCH
KS556
~
....
-
OUT
(2.12)
THRES
(6.8)
INP UT
~
(5.9)
i
I
'" OUTPLUT
CCI10 OpF)
TRIG
GND
J(7)
c8SAMSUNG
Electronics
397
KA33V
LINEAR INTEGRATED CIRCUIT
SILICON MONOLITHIC BIPOLAR INTEGRATED
CIRCUIT VOLTAGE STABILIZAER FOR
ELECTRONIC TUNER
TO·92
The KA33V is a monolithic integrated voltage stabilizer especially
deSigned as voltage supplier for electronic tuners.
FEATURES
• Low Temperature Coefficient
• Low Dynamic Resistance
• Typical Reference Voltage of 33V
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Symbol
Value
Unit
10
200
mA
mW
Topr
-20-75
°C
T5t9
-40-125
°C
1: Anode 2: Cathode
Zener Current
Power Dissipation (T a = 75°C)
Operating Ambient TemperatureRange
Storage Temperature Range
Iz
PD
ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Symbol
Stabilized Voltage
Stabilized Voltage-Temperature Drift
Vz
/I, VzJ/I, T
Dynamic Resistance
rz
Test Conditions
Iz=5mA
Iz=5mA
Ta = - 20 to 75°C
Iz =5mA, f=1KHz
Min
Typ
Max
Unit
31
-1
0
35
1
V
mV/oC
10
25
\
"
SCHEMATIC DIAGRAM
. - - - - - - - 1 - - - - -__- - - - _ - - - - - 0 2
1 - -_ _ _---J_ _ _ _.-J.-_ _ _ _O
c8SAMSUNG
Electronics
\~
Cathode
1 Anode
398
KA33V
LINEAR INTEGRATED CIRCUIT
MEASURING CIRCUITS
Fig. 1 Measuring Circuit for Stabilized Voltage Vz
---lz=5mA
A
v
KA33V
Volt Meter
Fig. 2 Measuring Circuit for Dynamic Resistance
Iz
IZ--
----IAc=ffi
50!,F
I
100
Fig. 3
c
0.1 iF
IZ
VV1
-........,
f=lKHz
EB
Vz
0.5mA
VV 1
rz= O.5mA
#--1--+------1 5mA
IZ
VV1
c8SAMSUNG
Electronics
399
KA33V
LINEAR INTEGRATED CIRCUIT
TYPICAL APPLICATION
Ach
Ych
Bch
Zch
Ri
C
Channel
setting
variable
resistor
Vi
(1) UHF TUNER
TR1
TR2
-(
-(
Antenna
TR1: RF AMP: KSC1393
KSC1070 (Under development)
TR2: OSC: KSC1730
01-04: 1S220 05: MIXER: 1SS16
~AFC
terminal
(2) VHF TUNER
-(
TR3
TR2
TR1: RM AMP: KSC1393
TR2: MIXER : KSC1394
TR3: OSC
: KSC1730
01, 04: 1S2209
02,03: 1S2207
c8SAMSUNG
Electronics
~
0
AFC terminal
Low/High Channel
Switching terminal.
400
KA33V
LINEAR INTEGRATED CIRCUIT
POWER-TEMPERATURE DERATING CURVE
Fig. 7 ALLOWABLE DISSIPATION
AMBIENT TEMPERATURE
~
I
z
o
~
iisZ
40
I~
c:
I
~
j!
200
I
100
-20
25
50
AMBIENT TEMPERATURE (OC)
~
~
I
'"
10
6
r--.....
--
4
75
4
E
~
+60
FREJAIR I
Iz=5mA
_
Vz=33.11V
=e
I +60
z
~+40
~
-1
J
-2
£l
-3
~
-4
~
g
filN
I
a
Iz =5mA XY·RECODER
-2a
::::;
iD_40 I - - t - -
~
II
I
I -60 I - - t - -
~
i
I
-----o VOUT
L....r-:--~
Fig. 3 Light Intesity to Frequency Converter
I
+5V TO 15V
LIGHT
INPUT
\~
c8SAMSUNG
Electronics
3.3K
~--+--------e-- FOUT
100KHz FULL SCALE
405
LINEAR INTEGRATED CIRCUIT
KA2803
LOW POWER CONSUMPTION EARTH
LEAKAGE DETECTOR
8 DIP
The KA2803 is designed for use in earth leakage circuit interrupters, for
operation directly off the AC line in breakers. The input of the differential amplifier is connected to the secondary coil of ZCT (Zero Current
Transformer). The amplified output of differential amplifier is integrated
at external capacitor to gain adequate time delay that is specified in
KSC4613.
The level comparator generates high level when earth leakage current
is greater than some level.
FUNCTIONS
• Differential amplifier
• Level camparator
• Latch circuit
FEATURES
•
•
•
•
•
•
•
•
•
Low power consumption (P d =5mW, 100Vl200V)
Built-in voltage regulator
High gain differential amplifier (VT =13.5mV)
1mA output current pulse to trigger SCR'S
Low external part count, economic
Mini-dip package (8 Dip), high packing density
High noise immunity, large surge margin
Super temperature characteristic of input sensitivity
Wide operating temperature range (Ta = -25°C - +80°C)
ORDERING INFORMATION
Operating Temperature
APPLICATION CIRCUIT
1. Full Wave Application Circuit
2. Half Wave Application Circuit
LOAD
LOAu
C4
0.Q11'
(----9-- ----------------- --________ J
Fig. 1
c8SAMSUNG
Electronics
Fig. 2
406
KA2803
LINEAR INTEGRATED CIRCUIT
ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
Characteristic
Supply Voltage
Supply Current
Power Dissipation
Lead Temperature (soldering 10 sec)
Operating Temperature
Storage Temperature
Value
Unit
20
S
300
260
-25- +SO
-65- +150
V
mA
Symbol
VeeNEE
Is
Po
T lead
Topr
T stg
mW
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Ta =25°C)
Characteristic
Supply Current 1
Symbol
IS1
Test Conditions
Min
Vee=12V (-25°C)
VA-VI =300mV (25°C)
(SO°C)
Typ
Max
Unit
400
5S0
530
4S0
p.A
p.A
p.A
13.5
17
mVrms
Vee =16V (-25°C - SO°C)
VA-VI=X
10
hOI
Vee=16V (25°C)
V A-V I =30mV
Voo=1.2V
12
30
p.A
h02
Vee=16V (25°C)
Voo=0.6V
VA. V 1 short
17
37
p.A
Output Current
10
Vse=1.4V
Vos=O.SV
Vee= 12V (-25°C)
(+25°C)
(+SO°C)
Latch on Voltage
Vscon
Vee = 16V (25°C)
Latch Input Current
Iscon
Vee=12V (25°C)
10sL
Vee=12V (-25-S0°C)
VosL=0.2V
200
Vloe
hoc =100mA (-25 - SO°C)
0.4
2
V
VSM
ISM =7mA (-25°C)
20
2S
V
Supply Current 2
IS2
VA-VI =X (25 - SO°C)
Vos=0.6
t
900
p.A
Latch Off Supply Voltage
VSOf!
Vos =high (25°0;)
7.0
Ton
Vee =16V (25°C)
V A-V I =0.3V
2
Trip Voltage
Differential Amplifier Output
Current 1
c--Differential Amplifier Output
Current 2
~-
-200
-100
-75
p.A
p.A
p.A
-
Output Low Current
c--Diff. Input Clamp Voltage
f----
Maximum Current Voltage
Response Time
c8SAMSUNG
Electronics
0.7
1.4
V
5
p.A
p.A
V
4
msec
407
I
KA2803
LINEAR INTEGRATED CIRCUIT
APPLICATION NOTE
(refer to full wave application circuit Fig. 1)
The Fig 1 shows the KA2803 connected in a typical leakage current detector system.
The power is applied to the Vee terminal (Pin 8) of the KA2803 directly from the power line.
The resistor Rs and capacitor Cs are chosen so that pin 8 voltage is at least 12V.
The value of C s is recommended above 1# at this time.
If the leakage current is at the load, it is detected by the zero current transformer (ZeT).
The output voltage signal of ZCT is amplified by the differential amplifier of the KA2803 internal circuit and appears as halfcycle sine wave signal referred to input signal at the outPl,.lt of the amplifier.
The amplifier closed loop gain is fixed about 1000 times with internal feedback resistor to compensate for zero current transformer (ZCT) Variations.
The resistor RL should be selected so that the breaker satisfies the required senSing current.
The protection resistor Rp is not usually used put when the high current is injected at the breaker, this resistor should be used
to protect the earth leakage detector IC the KA2803.
The range of Rp is from several hundred 0 to several kO.
The capacitor C, is for the noise canceller and standard value of C, is 0.0471'F. Also the capacitor C2 is noise canceller
capacitance but it is not usually used.
When high noise is only appeared at this system O.047I'F capacitor may be connected between pin 6 and pin 7.
The amplified signal is finally appeared to the Pin 7 with pulse signal through the internal latch circuit of the KA2803.
This signal drivies the gate of the external SCR which energizes the trip coil which opens the circuit breaker.
The trip time of breaker is decided by the capacitor C 3 and the mechanism breaker.
This capacitor should be selected under 1pF for the required the trip time.
The full wave bridge supplies power to the KA2803 during both the positive and negative half-cycles of the line voltage.
This allows the hot and neutral lines to be interchanged.
If your application want the detail information, request it on our application circuit designer of KA2803.
c8SAMSUNG
Electronics
408
LINEAR INTEGRATED CIRCUIT
KA2804
ZERO VOLTAGE SWITCH
8 DIP
The KA2804 is a TRIAC controller providing a complete solution for temperature controlled electric panel heaters, cookers, film processing baths
etc.
SWitching occurs at the zero voltage point in order to minimize radio frequency interference. The device is suitable for mains-on-line operation
and rcquh::s rr"n'r'1al components.
FEATURES
•
•
•
•
Easy operation either through the AC line or a DC supply.
Supply voltage control
Very few external components.
Symmetrical burst control - No DC current components in the
load circuit.
• Negative output current pulse up to 250mA-short circuit protection.
• Reference voltage output.
ORDERING INFORMATION
Operating Temperature
BLOCK DIAGRAM
Vs
I
Is
GND
AC
VSYN
INPUT O-~~~--{
RSYN
Q
Q
REFERENCE
VOLTAGE
Va
REF
1 VOLTAGE
OUTPUT
La
c8SAMSUNG
Electronics
409
LINEAR INTEGRATED CIRCUIT
KA2804
ABSOLUTE MAXIMUM RATINGS (Ta =2S0C)
Characteristic
Symbol
Value
Unit
Supply Voltage
Supply Current
Synchronous Current
Input Voltage
Power Dissipation
Junction Temperature
Operating Ambient Temperature
Storage Temperature
-Vs
-Is
ISYN
V,
Po
TJ
Topr
TSl9
8.2
40 (average)
5.0 (rms)
V
mA
mA
V
mW
°C
°C
°C
~IVsl
350
125
-20- +70
-65- +150
ELECTRICAL CHARACTERISTICS
(VS =8.0V, V SYN =100 to 115Vrms , Ta = 25°C, f=50/60Hz, unless otherwise specified)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
mA
Circuit Current
-Is
Pin 5, RSYN =56K
-
2.0
2.5
Supply Voltage 1
-Vs 1
Pin 5, Is =2.5mA
RsyN =56K
7.2
-
8.4
V
--
Supply Voltage 2
-Vs 2
Pin 5, Is=20mA
RsyN =56K
7.2
-
8.6
V
Synchronous Current
ISYN
Pin 8
0.3
-
-
mA
Output Pulse Width
Tp
Pin 6, RSYN =56K
-
200
-
pS
Output Voltage
Vo
Pin 6, lo~200mA
4.2
5.2
-
V
Output Current
10
Pin 6, Ro~25
200
250
-
mA
Output Leakage Current
ILO
Pin 6
2.0
pA
V,o
Pin 3, 4
2.0
5.0
mV
Input Bias Current
I,
Pin 3, 4
-
-
Input Offset Voltage
0.5
1.0
pA
-V,CM
Pin3,4
0
-
5.7
V
Common Mode Input
Voltage Range
Output Leakage Current
Reference Voltage
ILc
-VR
c8SAMSUNG
Electronics
Pin 2
-
-
0.2
pA
Pin 1, IR~1uA
-
3.6
-
V
410
LINEAR INTEGRATED CIRCUIT
KA2804
APPLICATIONS
ON-OFF TEMPERATURE CONTROL
AC
,-------1~-----------------.__------___.--_o 100Vrms
50/60Hz
NTC
Ao
56
7
KA2804
AH
VA
Asyn
56K
AH: HYSTEAESIS VOLTAGE SET
TIME PROPORTIONAL TEMPERATURE CONTROL
..--______
-..._--.---~~----------....,...-------..,......-___<>
AT
AC
100Vrms
50/60Hz
39K
Ao
56
KA2804
AT CT: TIMING PEAIOD SET.
ci$SAMSUNG
Electronics
'.
As
6.8K
2W
Asyn
56K
411
I
KA2807
LINEAR INTEGRATED CIRCUIT
EARTH LEAKAGE DETECTOR
8 DIP
The KA2807 is designed for use in earth circuit interrupters, for operation directly off the AC line interrupters.
Full advantage of the U.S. UL943 timing specification
is taken to insure maximum immunity to false triggering due to fine noise.
FEATURES
•
•
•
•
•
•
•
•
•
Full advantage of the UL943
Externally programmable fault current threshold
Direct interface to SCR
Operates under line reversally both load Vs line
and hot Vs neutral
Power supply shunt regulator in chip
Sense coil: 1000:1
GND/Neutral coil: 200:1
Normal fault sensitivity current is SmA typical
Trip time in normal fault and ground neutral fault
is 18ms typical
----~----------'
ORDERING INFORMATION
Operating Temperature
-40- + 70 0 C
BLOCK DIAGRAM
Vee
AMP OUT
TIMING
RESISTOR
--.-----------~
GND
TRIGGER OUT
Fig_ 1
c8SAMSUNG
Electronics
412
LINEAR INTEGRATED CIRCUIT
KA2807
ABSOLUTE MAXIMUM RATINGS
Characteristic
Symbol
Value
Unit
Supply Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Icc
Po
Topr
TsIg
19
1250
-40 - + 70
- 55 - + 150
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
(Ta= 25°C, Icc = 5mA)
Test Conditions
Min
Typ
Max
Unit
Shunt Regulator Voltage
Vreg
Pin 8, S1:2, S2:0FF
22
26
30
V
Amp Reference Voltage
V inl
Pin 3, S1:2, S2:0FF
9
10.5
12
V
Amp Output High Voltage
VOH
Pin 5, S1:3, S2:0N
Sig: 800Hz, 3.0Vp.p
Sinewave
17
19
21
V
Amp Output Low Voltage
VOL
Pin 5, S1:3, S2:0N
Sig: 800Hz, 3.0V p.p
Sinewave
1
2.5
4
V
Amp Sensitivity Current
ISEN
Pin 2, S1:3, S2:0N
Sig: 800Hz, 1.0Vp.p -2.5Vp.p
Sinewave
3
5
7
JlArms
Latch On Voltage
VON
Pin 7, S1:3, S2:0N
Sig: 800Hz, 3.0Vp.p
Sinewave
15
17.5
20
V
SCR Trigger Current
ITR
Pin 1, S1:3, S2:0N
Sig: 800Hz, 3.0Vp.p
Sinewave
0.5
1
2.4
mA
Output Low Voltage
240
mV
Vs1
Pin 1, S1:2, S2:0FF
100
Output Impedance
Ro
Pin 1, S1:2, S2:0FF
100
n
Output Sink Current
ISink
Pin 1, S1:2, S2:0FF
5
mA
c8SAMSUNG
Electronics
2.0
413
I
LINEAR INTEGRATED CIRCUIT
K.'\2807
TEST CIRCUIT
I
Ilss=5mA
Fig. 2
APPLICATION CIRCUIT
SENSE COIL
1000:1
GND/NEUTRAL
COIL 200:1
LINE
LOAD
Rset'
10l'F
+ TANTAL
15K12W
1N4004
8 Vee
-IN 2
1 trig
+IN 3
5 OUTPUT
Rset 6
lL
~
o
c:i
C3
0.011'F
7 CAP
C8
200pF
GND 4
C5
15nF
* Adjust
Aset
for desired sensitivity leakage current.
Fig. 3
c8SAMSUNG
Electronics
414
LINEAR INTEGRATED CIRCUIT
KA2807
Typical earth leakage detector circuit is shown in Fig. 3. This is designed to operate on 120V AC line voltage with
5mA normal fault sensitivity. Full-wave rectifier diode and 15K12W resistor are used to supply the DC power supply
required by the KA2807 C4 (1Jl.F) is used to filter the ripple of the supply voltage and peak current when fault current
generate over 5mA typical, SCR is turned ON and a large current can flow through the breaker coil to pull the contact
open. Once opened, the fault condition is removed and the discharge current 31th reset both the timing capacitor
and output latch causing the SCR to turn off.
A 1000:1 Sense coil is used to detect the normal fault. The fault current generated is stepped down by 1000 and
fed into the input pins of the OP amp through C7 (10Jl.F) capacitor.
C6 (0.0033Jl.F) and C8 (200pF) are added to obtain better noise immunity. The normal fault sensitivity current is
determined by discharging current of timing capacitor.
D'ISCh
'
argmg
current Ith 'IS R 7Vx 2 ...... (1)
set
Because the average fault current just equals the threshold current Ith at the decision point.
0.91
(2)
Ith -- If(rms) X
2
......
The factor 0.91 converts the rms value to an average value.
7V
Rset = If(rms)X 0.91 ...... (3)
in (1) and (2)
The precision value of Rset depends on the specific sense coil used KA2807 tolerances in as much as UL943
specifies a sensitivity "window" of 4mA-6mA, provision should be made to adjust Rset on a per·product bisic.
You can be obtained the desired integration time through proper selection of the timing capacitor CS.
The sense amplifier is capacitively coupled to a 200-turn coil in order to detect the grounded neutral fault.
In FIG. 3, grounded neutral detection is accomplished by feeding the neutral coil with 120Hz energy continuously
and allowing some of this energy to couple into the sense coil during conditions of neutral fault.
HOT
--l
AC
LINE
RL
ELD
NEUTRAL
I
I
~RB
Explain: An unintentional electrical path, RB , between
the load terminal of the hot line and the ground,
as shown by the dashed lines.
I
----~-----l
FIG. 4 NORMAL FAULT
HOT
AC
LINE
~
ELD
NEUTRAL
RG
r-------wv---- -
Explain: An unintentional electrical path between the
load terminal of the neutral line and the ground,
as shown by the dashed lines.
t
m
FIG. 5 GROUNDED NEUTRAL FAULT
qsSAMSUNG
Electronics
415
I
NOTES
I
~
PACKAGE DIMENSIONS
Unit: mm
TO·92
TO·220
Unit: mm
4.33
4.83
,
,
/
(/)3.61
TYP-1 ~
1.40
I I·
,
I
\
4.33
4.83
-----
I
6.12
6.62
6.98[ --~
7.49
2.16
3.12
8.94
9.44
13.97
14.97
o
0
0.36---11~
0.56
'1_
1.27 TYP----iI---I-_----,2=-=.5=4
I
TYP
(/) 3.20
TYP
1.80
TYP
4.55
5.05
8 DIP
1UB
0.45
0.55
Unit: mm
1.95
2.20
I
37.66
38.68
o
0-10°
B.95
9.45
!
~].09
~6.60
20.25
~
3.27
3.53
02
1r-------:-11.52
'f\1W:
.-=7
~37
Y
7.87
0.20
0.30
I I
~
4.05
4.55
-r-c-2.92
1.75
2.25
0.88
1.14
12.72
0
r - - - -.. .4--.-
2.79
3.04
I
(0 0)]::~~
Unit: mm
15.55
16.05
~I
r
2.54 TYP-l----l=-t-5.08 TYP
1
TO·3P
3.97
4.23
2.08
2.33.
~::~ -11~L I
3.46~1i .02 TYP
3.96
3.35
3.85
-~
-
1Ir--J
1
10.87
TYP
1---~5.4","=-5
TYP
c8~SUNG
II
"I
0.55
0.71
2.54
TYP
-I-
t-1-1L
~
0.56
3.42
0.51
1.02
419
I
PACKAGE DIMENSIONS
14 DIP
Unit mm
16 DIP
I
Unit mm
I
0-10·
OJ ~:
19.15
19.65
·09
o
7.87
6.60
~
~--H1.52
0.20
0.30
.Y
-W.
_----~-+
I~
.
~I 0.36
0.56
2.54
TYP
18 DIP
Unit: mm
8 SOP
4.31
'2.92
fo-L.3.43
0.51
1.02
Unit: mm
-:}
mJ
0-10·
6.09
6.60
~~~~~~~I-L
1.02
1;52
0.20
N,aSl
2'~ O~l
0.30
.......L 4.31
.92
3.43
TYP
o.~
=8~SUNG
0.79
7.37
7.87
-
If--
0.41
1.02
~
7
II
0.36
~O'51
~::~
1.27
TYP
j
--.J~
II
0.20
j
420
PACKAGE DIMENSIONS
Unit: mm
14 SOP
0]
~
It
0.20
,37
4.62
o
---11
mT-'-g-:j~--r-6'10
I 0.10
0.20
660
.
9'85
~
c::u
.
8 SIP
Unit mm
0.71
Unit mm
21.59
22.10
6.68
7.18
r- -i~
I
1 47
.
1.73
9 SIP
21.59
22.10
*--i
0.79 6.10
6.60
I g:~
1.27
TYP
TYP
TYP
let
O'20~j=-----r""1M:!
~
1.47
1.73
1.27
0
0.10
II-
~i I-U
10.11
.
Unit mm
4.37
4.62
0.35
0.51
0.36
0.51
..
16 SOP
~.~
I 3.30
I 1.21 3.81 -11
1.78
Im======:=t}
12.75
~----_---'-_-1..3.25
c8SAMSUNG
Electronics
6.09
0.20
0.30
0
6.68
7.18
3.30
3.81
1.27
1.78
~~
6.09
~
0.30
1==========~1!'2.75
~---_ _...J.U3.25
421
I
PACKAGE DIMENSIONS
Unit: mm
10 SIP
24.13
24.64
o
o
~:~p~:~
-=-+--+--~2.~ , 2.24
TYP
2.74
c8SAMSUNG
Electronics
0.30
0.41
422
I
I
SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A.
Southwest
Southwest
22837 Ventura Blvd.
Suite 305
Woodland Hills, CA
91367
(818) 346-6416
FAX: (818) 346-6621
Northwest
3027 Greenwich St.
Carlsbad, CA 90028
(619) 720-0230
FAX: (619) 720-0230
Southeast
South Central
204 Battleground
Corporate Park
3859 Battleground Ave.
Greensboro, NC 27410
(919) 282-0665
FAX: (919) 282-0784
15851 Dallas Parkway
Suite 840
Dallas, TX 75248-3307
(214) 770-7970
FAX: (214) 770-7971
2700 Augustine Drive
Suite 198
Santa Clara, CA
95054
(408) 727-7433
FAX: (408) 727-5071
North Central
901 Warrenville Road
Suite 120
Lisle, IL 60532-1359
(708) 852·2011
FAX: (708) 852·3096
North East
20 Burlington Mall Road
Suite 205
Burlington, MA 01803
(617) 273·4888
FAX: (617) 273·9363
SAMSUNG SEMICONDUCTOR REPRESENTATIVES
ALABAMA
SOUTHERN COMPONENT
SALES
307 Clinton Ave. East #413
Huntsville, AL 35801
TEL: (205) 533-6500
FAX: (205) 533-6578
CALIFORNIA
12
3350 Scott Blvd.
Building 10
Santa Clara, CA 95054
TEL: (514) 624-1340
FAX: (514) 624-2911
COLORADO
ARIZONA
HAAS & ASSOC. INC.
7441 East Butherus Drive
Suite 300
Scottsdale, AZ. 85260
INTELATECH, INC.
4737 Prevel Street
Pierefonds, Quebec H9K 1J4
TEL: (602) 998-7195
FAX: (602) 998-7869
CANDAL INC.
2901 So. Colorado Blvd.
Suite A
Denver, CO 80222
TEL: (303) 692-8484
FAX: (303) 692-8416
CONNECTICUT
TEL: (408) 988-3400
FAX: (408) 988-2079
PHOENIX SALES
267 Main Street
Torrington, CT 06790
TEL: (203) 496-7709
FAX: (203) 496-0912
FLORIDA
SPINNAKER SALES
11545 West Bernardo Court
Suite 200
San Diego, CA 92127
TEL: (619) 451-8595
FAX: (619) 485-0561
WESTAR REP COMPANY
2472 Chambers Road
Suite 100
Tustin, CA 92680
TEL: (714) 832-3325
FAX: (714) 832-7894
WESTAR REP COMPANY
25202 Crenshaw Blvd.
Suite 217
Torrance, CA 90505
WESTAR REP. COMPANY
26500 Agoura Rd.
Suite 204
Calabasas, CA 91302
MEC
700 W. Hillsboro Blvd.
Bldg. 4, Suite 204
Deerfield Beach, FL33441
teL: (305) 426-8944
(305) 426-8960
FAX: (305) 426·8799
FLORIDA
MEC
11 Emerald Court
Sate lite Beach, FL
TEL: (407) 773·1100
FAX: (407) 777-6529
TEL: (213) 539-2156
FAX: (213) 539-2564
MEC
830 North Atlantic Blvd.
Suite B401
Cocoa Beach, FL 32931
TEL: (407) 799-0820
FAX: (407) 799-0923
TEL: (818) 880-0594
FAX: (818) 880·5013
MEC
10637 Harborside Drive, N
Largo, FL 34643
TEL: (813) 393-5011
FAX: (813) 393-5202
GEORGIA
CANADA
INTELATECH, INC.
1115 Crestlawn Drive
Suite 1
Mississauga, Ontario L4W1A7
TEL: (416) 629-0082
FAX: (416) 629-1795
c8SAMSUNG
Electronics
SOUTHERN COMPONENT
SALES
6075 The Corners Parkway
Suite 103
Norcross, GA 30092
TEL: (404) 729-8117
FAX: (404) 729-8056
425
II
SAMSL'NG SEMICONDUCTOR REPRESENTATIVES
ILLINOIS
RI
8430 Gross Point Road
Skokie, IL 60076
TEL: (708) 967-8430
FAX: (708) 967-5903
TEL: (301) 296-9360
FAX: (301) 296-9373
ATMI
6700 S.w. 105th Street
Suite 303
Beaverton, OR 97005
TEL: (503) 643-8307
FAX: (503) 646-9536
PENNSYLVANIA
MASSACHUSETTS
NEW TECH SOLUTIONS, INC.
111 South Bedford St~eet
Suite 102
Burlington, MA 018'03
TEL: (216) 273-3798
FAX: (216) 225-1461
OREGON
MARYLAND
ADVANCED TECH SALES
100 West Road
Suite 412
Towson, MD 21204
BAILEY, J.N. & ASSOC.
1667 Devonshire Drive
Brunswick, OH 44212
TEL: (617) 229-8888
FAX: (617) 229-161 A
BAILEY, J.N. & ASSOC.
1660 Hancock Avenue
Apollo, PA 15613
TEL: (412) 568-1392
FAX: (412) 568-1479
RIVCO JANUARY INC.
RJI Building
78 South Trooper Road
Norristown, PA 19403
TEL: (215) 631-1414
FAX: (21.5) 631-1640
MICHIGAN
JENSEN C.B.
2145 Crooks Rd.
Troy, MI 48084
TEL: (313) 643-0506
FAX: (313) 643-4735
MINNESOTA
IRI
1120 East 80th Street #200
Bloomington, MN 55420
TEL: (612) 854-1120
FAX: (612) 854-8312
NEW JERSEY
NEPTUNE ELEC.
2460 Lemoine Avenue
Ft. Lee, NJ 07024
TEL: (201) 461 -2789
FAX: (201) 461-3857
NEW MEXICO
S.w. SALES, INC.
7137 Settlement Way, N.w.
Albuquerque, NM 87120
TEL: (505) 899-9005
FAX: (505) 899-8903
PUERTO RICO
DIGIT-TECH
P.O. Box 1945
Calle Cruz #2
Bajos, San German 00753
TEL: (809) 892-4260
FAX: (809) 892-3366
TEXAS
S.W. SALES INC.
2267 Trawood, Bldg. E3
EI Paso, TX 79935
TEL: (915) 594-8259
FAX: (915) 592-0288
VIELOCK ASSOC.
555 Republic Drive
Suite 105
Plano, TX 75074
TEL: (214) 881-1940
FAX: (214) 423-8556
VIELOCK ASSOC.
9430 Research Blvd.
Echelon Bldg. 2, Suite 330
Austin, TX 78759
TEL: (512) 345-8498
FAX: (512) 346-4037
UTAH
NEW YORK
NEPTUNE ELEC.
-255 Executive Dr.
Plainview, NY 11803
TEL: (516) 349-160
FAX: (516) 349-1343
T-SQUAREIJ
6443 Ridings Road
Syracuse, NY 13206
TEL: (315) 463-8592
FAX: (315) 463-0355
T-SQUARED
7353 Victor-Pittsford Road
Victor, NY 14564
TEL: (716) 924-9101
FAX: (7-16) 924-4946
ANDERSON & ASSOC.
270 South Main, #108
Bountiful, UT 84010
TEL: (801) 292-8991
FAX: (801) 298-1503
VIRGINIA
ADVANCED TECHNOLOGY
SALES, INC.
406 Grinell Drive
Richmond, VA 23236
WASHINGTON
ATMI
16150 NE 85TH St. Suite 217T
Redmond, WA 98052
OHIO
BAILEY, J.N. & ASSOC.
129 W. Main Street
New Lebanon, OH 45345
TEL: (513) 687-1325
FAX: (513) 687-2930
BAILEY, J.N. & ASSOC.
2978 Findley Avenue
Columbus, OH 43202
TEL: (614) 262-7274
FAX: (614) 262-0384
c8SAMSUNG
Electronics
TEL: (804) 320-8756
FAX: (804) 320-8761
TEL: (206) 882-4665
FAX: (206) 882-7517
WISCONSIN
IRI
16745 W. Bluemound Rd.
Suite 340
Brookfield, WI 53005
TEL: (414) 789-9393
FAX: (414) 789-9272
426
SAMSUNG SEMICONDUCTOR SALES OFFICES-EUROPE
SAMSUNG
SEMICONDUCTOR
EUROPE GmbH
Mergenthaler Allee 38-40
06236 Eschborn
(West Germany)
Tel: 06196/9009-0
Fax: 0196/9009·89
PARIS
Centre d'Affaires La
Boursidiere RN 186, Bat.
Bourgogne, BP 202
F-92357 Le Plessis-Robinson
(France)
Tel: 0033-1-40 94 0700
Fax: 0033-1-40 94 02 16
MILANO
Viale G. Matteotti, 26
1-20095 Cusano Milanino
(Italy)
Tel: 0039-2-6 13 2888
Fax: 0039-2-6192279
MONCHEN
Carl-Zeiss-Ring 9
0-8045 Ismaning
(West Germany)
Tel: (49) 0-89 96 4838
Fax: (49) 0-89 96 48 73
SAMSUNG SEMICONDUCTOR REPRESENTATIVES
EUROPE
GERMANY (WEST)
AUSTRIA
SATRON HANDELSGES. MBH
Hoffmeistergasse 8·101115 TEL: 0043-222-87 30 20
A-1120 Wien
FAX: 0043-222-85 95 93
TLX: 047-753 11 85 1
TERMOTROL GmbH
Pilotystr 4
.
0-8000 MOnchen 22
BELGIUM
C&S ELECTRONICS NV
Heembeekstraat 111
B-1120 Brussels
SILCOM ELECTRONICS VERTRIEBS GmbH
Neusser Str. 336-338
TEL: (49)-0-2161-6 07 52
0-4050 Monchengladbach FAX: (49)-0-2161-6516-38
TLX: 85 2189
TEL: 0032-2-2 44 29 74
FAX: 0032-2-2 42 89 30
TLX: 046-2 58 20
TEL: (49)..Q-89-2303 52 52
FAX: (49)-0-89-2303 52 80
TLX: 17898453
ING. THEO HENSKES GmbH
Laatzener Str. 19
TEL: (49)-0-511-86 50 75
Postfach 72 12 26
FAX: (49)-0-7249 79 93
0-3000 Hannover 72
TLX: 92 35 09
DENMARK
EXATEC ALS
Oortheavj 1-3
OK-2400 Kopenhagen
TEL: 00453-1-19 10 22
FAX: 00453-1 1931 20
TLX: 27253
TEL: (49)-0-89-61 30303
FAX: (49)-0-89-61 31 668
TLX: 5 21 61 87
MSC VERKAUFSBURO MinE
Wormser Str. 34
TEL: (49)-0-62-332 66 43
Postfach 37
FAX: (49)-0-332 02 98
0-6710 Frankenthal
TLX: 46 52 30
FINLAND
INSTRU COMPONENTS
P_O. Box 64, Vitikka 1
SF-02631·ESPOO
Helsinki
ASTRONIC GmbH
GrOnwalder Weg 30
0-8024 Oeisenhofen
TEL: 00358-0-5 28 43 25
FAX: 00358-0-5 28 4333
TLX: 057-12 44 26
MICRONETICS GmbH
Wail Our Stadter Str. 45
0-7253 Renningen
TEL: (49)·0-7159-60 19
FAX: (49)-0-715 951 19
TLX: 72 47 08
ITALY
FRANCE
ASIA MOS (OMNITECH ELCCTRONIQUE)
Batiment Evolic 1 165,
TEL: 0033-1-47 60 1247
Boulevard Oe Valmy
FAX: 0033-1-47 601582
F-92705 Colombes
TLX: 042-61 38 90
DIS. EL. SPA
Via Orbetello 98
1-10148 Torino
SONEL·ROHE (SCAIB)
6, Rue Le Corbusier
Silic 424
F-94583 Rungis, Cedex
MOXEL S.R.L.
Via C. Frova, 34
TEL: 0039-2-61 29 05 21
1-20092 Cinisello Balsamo FAX: 0039-2-6 17 25 82
TLX: 043-35 20 45
TEL: 0033-1-46 86 81 70
FAX: 0033-1·45 60 55 49
TLX: 042-20 69 52
c8SAMSUNG
Electronics
TEL: 0039-1-12 20 15 22
FAX: 0039·1-12 16 59 15
TLX: 043-21 51 18
427
II
SAMSUNG SEMICONDUCTOR REPRESENTATIVES
THE NETHERLANDS
UNITED KINGDOM
MALCHUS BV HANDEIMIJ.
Fokkerstraat 511-513
TEL: 0031-10-4 27 77 77
Postbus 48
FAX: 0031-10-4 154867
NL·3125 BO Schiedam
TLX: 044·2 15 98
NORWAY
EXATEC ALS
Solheimveien 50
Postbox 314
N-1473 Skarer
TEL: 0047-2-97 29 50
FAX: 0047-2-97 29 53
STC ELECTRONIC DISTRIBUTION
Edinburgh Way Harlow TEL: (0279) 441144
FAX: (0279) 441787
Essex CM20 20F
BYTECH LTD.
3 The Western Centre,
Western Road,
Bracknell Berkshire
RG121RW
TEL: Sales 0344 482211
Account/Admin
0344424222
FAX: 0344 420400
TLX: 848215
SPAIN
SEMICONDUCTORES S.A.
Ronda General Mitre
TEL: 0034-3-2 172340
240 Bjs
FAX: 0034-3-2 17 65 98
E-08006 Barcelona
TLX: 052-9 77 87
SWEDEN
MIKO KOMPONENT AB
Segers by Vagen 3
P_O. Box 2001
S-14502 Norsborg
TEL: 0046-753-89080
FAX: 0046-753-75 34 0
TLX: 052-9 77 87
ITT MULTI COMPONENTS
346 Edinburgh Avenue
TEL: 0753 824212
Slough SL 1 4TU
FAX: 0753 824160
TLX: 849804
NELTRONIC LIMITED
John F_ Kennedy Road,
Naas Road, Qublin 12,
Ireland
TEL: (01) 503560
FAX: (01) 552789
TLX: 93556 NELT EI
SWITZERLAND
PANATEL AG
Grundstr. 20
CH-6343 Rotkreuz
TEL: 0041-42 64 30 30
FAX: 0041-42 64 30 35
TLX: 045-86 87 63
cKSAMSUNG
. . Electronics
428
SAMSUNG SEMICONDUCTOR REPRESENTATIVES
ASIA
SANT SONG CORP.
Room A, 8F No. 180, Sec·4,
Chung Hsiao E. Rd., Taipei,
Taiwan, R.O.C.
'
HONG KONG
AV, CONCEPT LTD.
ROOM 804, Tower A, 81F1.,
TEL: 3629325
Hunghom Commercial Centre, FAX: 7643108
37·39 MA Tau Wai Road,
TLX: 52362 AOVCC HX
Hunghom, Kowloon,
Hong Kong
PROTECH COMPONENTS LTD.
Unit 2, 3/F, Wah Shing Centre, TEL: 7930882
11 Shing Yip Street, Kowloon, FAX: 7930811
Kwun Tong, Hong Kong
WISEWORLD TECHNOLOGY CO.
Room 708, Tower A, 7/FI.,
TEL: 7658923
Hunghom COmmercial Centre, FAX: 3636203
37·39 MA Tau Wai Road,
Kowloon, Hong Kong
RIGHT SYSTEM CO., LTD.
Room A 19, 6/FI.,
Proficient Ind. Centre,
Block A, 6 Wang Kwun Road,
Kowloon Bay, Kowloon,
Hong Kong
TEL: 7566331
FAX: 7998985
TLX: 52896 OSPCL HX
SOLARBRITE ENTERPRISE CO.
(CALCULATOR & WATCH)
Room 903, The Kwangtung
TEL: 7701010
Provincial Bank Bldg.,
FAX: 7700559
589·591 Nathan Road,
TLX: 52543 SECL HX
Kowloon, Hong Kong
SOLARI COMPUTER ENGINEERING LTD.
(4 BIT/S BIT ONE CHIP SOFTWARE HOUSE)
Unit 703-4, 7/FI., Jordan House, TEL: 7213318
6-8 Jordan Road, Kowloon,
FAX: 7235288·
Hong Kong
CENTRAL SYSTEMS DESIGN LTD.
(ASIC DESIGN HOUSE)
Room 1704, Westlands Centre, TEL: 5620248
20 Westlands Road,
FAX: 5658046
Quarry Bay, Hong Kong
TLX: 73990 CSO HX
DATAWORLD INTERNATIONAL LTD.
(MIYUKI ELECTRONICS (HK) LTD.)
(ASIC DESIGN HOUSE)
Flat No. 3-4, 5/F1.,
TEL: 7862611
Yuen Shing Ind. Bldg.,
FAX: 7856213
1033, Yee Kuk Street, West,
TLX: 45876 MYK HX
Kowloon, Hong Kong
TAIWAN
YOSUN INDUSTRIAL CORP.
7F, No. 76, Chern Kong Rd.,
Sec. 1~ Nan Kang, Taipei,
Taiwan R.O.C.
KINREX CORP.
2nd. FI., 514-3, Tun Hwa S.
Rd., Taipei, Taiwan, R.O.C.
TEL: (02) 788-1991 (Rep.)
FAX: (02) 788-1996
TEL: 02-700-4686-9
FAX: 02-704-2482
TLX: 20402 KINREX
c8SAMSUNG
Electronics
TEL: (02) 775·2506
FAX: (02) 771·8413
JAPAN
ADO ELECTRONIC INDUSTRIAL CO., LTD.
7th FI., Sasage Bldg., 4·6
TEL: 03·257·1618
Sotokanda 2·Chome Chiyoda· FAX: 03·257·1579
ku, Tokyo 101, Japan
INTERCOMPO INC.
Ihi Bldg., 1·6·7, Shibuya,
Shibuya·ku, Tokyo 150 Japan
TEL: 03·406-5612
FAX: 04·409·4834
CHEMI·CON INTERNATIONAL CORP.
Mitauya Toranomon Bldg.,
TEL: 03·508-2841
22·14, Toranomo~ l·Chome,
FAX: 03-504·0566
Minato·ku, Tokyo 105, Japan
TOMEN ELECTRONICS CORP.
1-5, Takamatsu·Cho 3 Chome TEL: 0425·22·6145
Tachikawa, Tokyo 190
FAX: 0425·22-6159
DIA SEMICON SYSTEMS INC.
Wacore 64 1·37·8, Sangenjaya, TEL: 03·487·0386
Setagaya·ku, Tokyo 154 Japan FAX: 03·487·8088
RIKEI CORP.
Nichimen Bldg., 2·2·2,
Nakanoshima, Kita·ku,
Osaka 530 Japan
TEL: 06·201·2081
FAX: 06·222-1185
SINGAPORE
GEMINI ELECTRONICS PTE LTD.
100, Upper Cross Street
TEL: 65·5351777
#09·080G Bldg.
FAX: 65·5350348
Singapore 0105
TLX: RS-42819
BOSTEX ELECTRONICS PTE LTD.
#05·14 Bylands Bldg.
TEL: 65·3395713
135 Middle Road
FAX: 65-3389538
Singapore 0718
ASTINA ELECTRONICS (M) SON BHD
23, Jalan Pantai Jerjak Satu
TEL: 04-876697
11900 Bayan Lepas Penang,
FAX: 04·876780
West Malaysia
ASTINA ELECTRONICS (S) PTE LTD.
315, Outram Road,
TEL: 65·2232221
#11·02 Tan Boon Liat Bldg.,
FAX: 65·2213776
Singapore 0315
INDIA
COMPONENTS AND SYSTEMS MARKETING
ASSOCIATES (INDIA) PVT. LTD.
100, Oadasaheb Phalke Road,
Dadar, Bombay 400
TEL: 4114585
014
FAX: 4112546
TLX: 001·4605 PDT IN
429
•
SAMSUNG SEMICONDUCTOR REPRESENTATIVES
TURKEY
ELEKTRO SAN. VE TIC. KOLL.
Hasanpasa, Ahmet Rasim Sok
No. 16 Kadikoy Istanbul,
Turkey
STI.
TEL: 337·2245
FAX: 336·8814
TLX: 29569 elts tr
THAILAND
VUTIPONG TRADING LTD., PART.
51·53 Pahurat Rd. (Banmoh)
TEL: 221·9699·3641
Bangkok 10200 THAILAND
223·4608
FAX: 224-0861
TLX: 87470 Vutipong TH
KOREA
NAEWAE SEMICONDUCTOR
Room 503, 22·dong, Sunjn
Bldg., 16·1, Hankangro·2ka,
Yongsan·ku, Seoul, Korea
Cable: ELECONAEWAE
SEOUL
c.p.a. BOX 1409
CO., LTD.
TEL: 717·4065-7
702·4407-9
FAX: 702·3924
TLX: NELCO K27419
SAMSUNG LlGHT·ELECTRONICS CO., LTD.
4th FI. Room 2·3,
TEL: 718·0045,
Electronics Main Bldg., 16·9,
718·9531-5
Hankangro·3ka, Yongsan·ku, FAX: 718·9536
Seoul, Korea
c8SAMSUNG
Electronics
NEW CASTLE SEMICONDUCTOR CO., LTD.
4th FI. Room 10-11,
TEL: 718·8531-4
Electronics Main Bldg., 16·9, FAX: 718·8535
Hankangro·3ka, Yongsan·ku,
Seoul, Korea
HANKOOK SEMICONDUCTOR &
TELECOMMUNICATIONS CO., LTD.
402 Suite, Sowon Bldg.,
TEL: 338·2015-8
354·22, Seokyo·dong,
FAX: 338·2983
Mapo·ku, Seoul, Korea
SEG YUNG INTERISE CORP.
21·301, Sunin Bldg., 16·1,
TEL: 701-6811-6,
Hankangro·2ka, Yongsan·ku,
701-6781-4
Seoul, Korea
FAX: 701-6785
SEGYUNG ELECTRONICS
182·2, Jangsa·dong,
Jongro·ku, Seoul, Korea
SAMTEK
Room 704, Euylim Bldg.,
16·96, Hankangro·3ka,
Yongsan·ku, Seoul, Korea
TEL: 273-6781-3
FAX: (02) 273-6597
TLX: K24950
SUKSEMT
TEL: 703·9656-8
FAX: 703·9659
SUNIN INDUSTRIES CO., LTD.
Sunin Bldg., 7FI., 16·1,
TEL: 718·7113-6
Hankangro·2ka, Yongsan·ku,
702·1257-9
Seoul, Korea
FAX: 715·1031
430
SAMSUNG SEMICONDUCTOR DISTRIBUTORS
ALABAMA
HAMMOND
4411-B Evangel Circle, N.w .
. Huntsville, AL 35816
(205) 830-4764
ARIZONA
ADDED VALUE
7741 East Gray Road
Suite #9
Scottsdale, AZ 85260
(602) 951-9788
CYPRESS/RPS
2164 E. Broadway Road #310-8
Tempe, AZ 85282
(602) 966-2256
JACO
2260 Townsgate Road
Westlake Village, CA 91361
(805) 495-9998
JACO
2880 Zanker Road
Suite 202
San Jose, CA 95134
(408) 432-9290
JACO
23-441 South Pointe Drive
Laguna Hills, CA 92653
(714) 837-8966
MICRO GENESIS
2880 Lakeside Drive
Santa Clara, CA 95054
(408) 727-5050
CANADA
CALIFORNIA
ADDED VALUE
3320 East Mineral King
Unit 0
Visalia, CA 93291
(209) 734-8861
ADDED VALUE
1582 Parkway Loop
Unit G
Tustin, CA 92680
(714) 259-8258
ADDED VALUE
6397 Nancy Ridge Road
San Diego, CA 92121
(619) 558-8890
ADDED VALUE
31194 La Baya Drive, #100
Westlake Village, CA 91362
(818) 889-2861
ALL AMERICAN
369 Van Ness Way #701
Torrance, CA 90501
(BOO) 669-8300
BELL MICRO PRODUCTS
18350 Mt. Langley
Fountain Valley, CA.92708
(714) 963-0667
BELL MICRO PRODUCTS
550 Sycamore Drive
Milpitas, CA 95035
(408) 434-1150
CYPRESS/RPS
6230 Descanso Avenue
Buena Park, CA 90620
(714) 521-5230
CYPRESS/RPS
10054 Mesa Ridge Ct
Suite 118
San Diego, CA 92121
(619) 535-0011
CYPRESS/RPS
2175 Martin Avenue
Santa Clara, CA 95050
CYPRESS/RPS
21550 Oxnard, #420
Woodland Hills, CA 91367
ELECTRONIC WHOLESALERS
1935 Avenue De L'Eglise
Montreal, Quebec, Canada
H4E 1H2
(514) 769-8861
PETERSON, C.M.
220 Adelaide Street North
London, Ontario, Canada
N6B 3H4
(519) 434-3204
SAYNOR VARAH
99 Scarsdale Road
Don Mills, Ontario, Canada
M3B 2R4
(416) 445-2340
SAYNOR VARAH
1-13511 Crestwood Place
Richmond, B.C., Canada
V6V 2G5
(604) 273-2911
WESTBURNE IND. ENT., LTD.
300 Steep rock Drive
Downsview, Ontario, Canada
M3J 2W9
(416) 635-2950
COLORADO
ADDED VALUE
4090 Youngfield
Wheat Ridge, CO 80033
(303) 422-1701
CYPRESS/RPS
12503 E. Euclid Drive
Englewood, CO 80111
(303) 792-5829
CONNECTICUT
ALMO ELECTRONICS
31 Village Lane
Wallingford, CT 06492
(203) 288-6556
(408) 980-8400
JACO
384 Pratt Street
Meriden, CT 06450
(203) 235-1422
(818) 710-7780
JV
690 Main Street
East Haven, CT 06512
(203) 469-2321
c8SAMSUNG
Electronics
431
II
SAMSUNG SEMICONDUCTOR DISTRIBUTORS
FLORIDA
ALL AMERICAN
16251 N.W. 54th. Avenue
Miami, FL 33014
(305) 621-8282
HAMMOND
6600 N.w. 21st. Avenue
Fort Lauderdale, FL 33309
(407) 973-7103
. HAMMOND
1230 W. Central Blvd
Orlando, FL 32802
MICRO GENESIS
2170 W. State Road 434 #324
Longwood, FL 32779
(407) 849-6060
(407) 869-9989
JACO
Rivers Center
10270 Old Columbia Road
Columbia, MD 21046
(301) 995-6620
MASSACHUSETS
ALMO ELECTRONICS
60 Shawmut Avenue
Canton, MA 02021
(617) 821-1450
GERBER
128 Carnegie Row
Norwood, MA 02062
(617) 329-2400
JACO
222 Andover Street
Wilmington, MA 01887
(617) 273-1860
GEORGIA
HAMMOND
5680 Oakbrook Parkway
#160
Norcross, GA 30093
(404) 449-1996
QUALITY COMPONENTS
6145 Northbelt Parkway
Suite B
Norcross, GA 30071
(404) 449-9508
MICHIGAN
CALDER
4245 Brockton Drive
Grand Rapids, MI 49508
(616) 698-7400
CHELSEA INDUSTRIES
34443 Schoolcraft
Livonia, MI 48150
(313) 525-1155
MINNESOTA
ILLINOIS
(312) 860-7171
ALL AMERICAN
11409 Valley View Road
Eden Prairie, MN 55344
(612) 944-2151
GOOLD
101 Leland Court
Bensenville, IL 60106
(312) 884-6620
CYPRESS/RPS
7650 Executive Drive
Eden Prairie, MN 55344
(612) 934-2104
QPS
101 Commerce Dr. #A
Schaumburg, IL 60173
VOYAGER
5201 East River Road
Fridley, MN 55421
(612) 571-7766
INDIANA
ALTEX
12744 N. Meridian
Carmel, IN 46032
(317) 848-1323
CHELSEA INDUSTRIES
8465 Keystone Crossing, #115
Indianapolis, IN 46240
(317) 253-9065
MISSOURI
CHELSEA INDUSTRIES
2555 Metro Blvd.
Maryland Heights, MO 63043
(314) 997-7709
NEW JERSEY
MARYLAND
(301) 251-1205
ALMO ELECTRONICS
12 Connerty Court
East Brunswick, NJ 08816
(201) 613-0200
ALL AMERICAN
1136 Taft Street
Rockville, MD 20853
(301) 953-2566
GENERAL RADIO SUPPLY
600 Penn St. @ Bridge Plaza
Camden, NJ 08102
(609) 964-8560
ALMO ELECTRONICS
8309B Sherwick Court
Jessup, MD 20794
(301) 995-6744
JACO
Ottilio Office Compl~x
555 Preakness Avenue
Totowa, NJ 07512
(201) 942-4000
GENERAL RADIO SUPPLY
6935L Oakland Mills Road
Columbia, MD 21045
c8SAMSUNG
Electronics
432
SAMSUNG SEMICONDUCTOR DISTRIBUTORS
OKLAHOMA
NEW YORK
ALL AMERICAN
33 Commack Loop
Ronkonkoma, NY 11779
(516) 981·3935
CAM/RPC
2975 Brighton Henrietta TL Road
Rochester, NY 14623
(716) 427·9999
JACO
145 Oser Avenue
Hauppauge, NY 11788
(516) 273·5500
MICRO GENESIS
90·10 Colin Drive
Holbook, NY 11741
(516) 472-6000
QUALITY COMPONENTS
3158 S. 108th East Avenue
Suite 274
Tulsa, OK 74146
(918) 664·8812
OREGON
NORTH CAROLINA
QUALITY COMPONENTS
3029·105 Stonybrook Drive
Raleigh, NC 27604
(919) 467·4897
DIXIE
2220 South Tryon Street
Charlotte, NC 28234
(704) 377·5413
HAMMOND
2923 Pacific Avenue
Greensboro, NC 27420
(919) 275-6391
RESCO/RALEIGH
Hwy. 70 West & Resco Court
flaleigh, NC 27612
(919) 781·5700
CYPRESS/RPS
15075 S. Koll Parkway
Suite D
Beaverton, OR 97006
(503) 641·2233
PENNSYLVANIA
ALMO ELECTRONICS
9815 Roosevelt Blvd.
Philadelphia, PA 19114
(215) 698-4003
CAM/RPC
620 Alpha Drive
Pittsburgh, PA 15238
(412) 782·3770
ALMO ELECTRONICS
220 Executive Drive
Mars, PA 16046
(412) 776·9090
SOUTH CAROLINA
OHIO
DIXIE
4909 Pelham Road
Greenville, SC 29606
(803) 297·1435
DIXIE
1900 Barnwefl Street
Columbia, SC 29201
(803) 779·5332
HAMMOND
1035 Lowndes Hill Rd.
Greenville, SC 29607
(803) 233·4121
CAM/RPC
749 Miner Road
Cleveland, OH 44143
(216) 461·4700
CAM/RPC
15 Bishop Drive #.104
Westerville, OH 43081
(614) 888·7777
CAM/RPC
7973·B Washington Woods Drive
Centerville, OH 45459
(513) 433·5551
ADDED VALUE
4470 Spring Valley Road
Dallas, TX 75244
(214) 404·1144
CHELSEA INDUSTRIES
10979 Reed Hartman, Highway
#133
CinCinnati, OH 45242
(513) 891·3905
ADDED VALUE
6448 Highway 290 East
#A103
Austin, TX 78723
(512) 454·8845
CHELSEA INDUSTRIES
1360 Tomahawk
Maumee, OH 43537
(216) 893-0721
ALL AMERICAN
1819 Firman Drive, #127
Richardson, TX 75081
(214) 231·5300
SCHUSTER
11320 Grooms Road
Cincinnati, OH 45242
(513) 489·1400
CYPRESS/RPS
2156 W. Northwest Highway
Dallas, TX 75220
(214) 869·1435
SCHUSTER
20570 East Aurora Road
Twinsburg, OH 44087
(216) 425·8134
JACO
1209 Glenville Drive
Richardson, TX 75080
(214) 235·9575
TEXAS
c8SA~SUNG
Electromcs
433
I
SAMSUNG SEMICONDUCTOR DIS'fRIBUTORS
MICRO GENESIS
9221 LBJ Freeway, #220
Dallas, TX 75243
(214) 644·5055
OMNIPRO
4141 Billy Mitchell
Dallas, TX 75244
(214) 233'()500
QUALITY COMPONENTS
4257 Kellway Circle
Addison, TX 75244
(214) 733·4300
QUALITY COMPONENTS
1005 Industrial Blvd.
Sugar Land, TX 77478
(713) 240·2255
QUALITY COMPONENTS
2120·M Braker Lane
Austin, TX 78758
(512) 835'()220
VIRGINIA ELEC.
715 Henry Avenue
Charlottesville, VA 22901
(804) 296-4184
WASHINGTON
UTAH
ADDED VALUE
1836 Parkway Blvd.
West Valley City; UT 84119
VIRGINIA
CYPRESS/RPS
22125 17th Avenue
Suite 114
Bothell, WA 98021
(206)483·1144
JACO
15014 N.E. 40th Street
Bldg. "0", Unit 202
Redmond, WA 98052
(206) 881·9700
PRIEBE
14807 N.E. 40th
Redmond, WA 98052
(206) 881·2363
WISCONSIN
(801) 975·9500
c8~SUNG
MARSH
1563 S. 101st. Street
Milwaukee, WI 53214
(414) 475-6000
434
NOTES
NOTES
NOTES
NOTES
Semiconductor Business
HEAD OFFICE:
8/10FL. SAMSUNG MAIN BLDG.
250, 2-KA, TAEPYUNG-RO,
CHUNG-KU, SEOUL, KOnEA
cpo. BOX 8233
TELEX KORSST K27970
TEL: (SEOUL) 751-2114
FAX 753-0967
BUCH EON PLANT:
82-3, DODANG-DONG,
BUCHEON, KYUNGKI-DO, KOREA
CPO BOX 5779 SEOUL 100
-TELEX: KORSEM K28390
TEL: (SEOUL) 741-0066, 664-0066
FAX: 741-4273
KIHEUNG PLANT:
SAN H24 NONGSUH-RI, KIHEUNG-MYUN
YONGIN-GUN, KYUNGKI-DO, KOREA
cPO. BOX 37 SUWON
TELEX: KORSST K23813
TEL: (SEOUL) 741-0620/7
FAX: 741-0628
GUMI BRANCH:
259, GONDAN-DONG, GUMI,
KYUNGSANGBU~DO, KOREA
TELEX: SSTGUMI K54371
TEL: (GUMI) 2-2570
FAX: (GUMI) 52-7942
SAMSUNG SEMICONDUCTOR mc.:
3725 NORTH FIRST STREET
SANJOSE, CA 95134-1708, USA
TEL (408) 434-5400
TELEX: 339544
FAX: (408) 434-5650
HONG KONG BRANCH:
24FL. TOWER 1 ADMIRALTY CENTER
18 HARCOURT ROAD HONG KONG
TEL: 8626900
TELEX: 80303 SSTC HX
FAX 86613A3
TAIWAN OFFICE:
RM. 2401, 24F, INT'L TRADE BLDG.,
333, KEEtLUNG RD., SEC. 1, TAIPEI,
TAIWAN, RO.C.
TEL: (2) 757-7292
FAX: (2) 757-7311 '
SAMSUNG ELECTRONICS JAPAN CO., LTD.
6F. SUDAMACHI BERDE BLDG.
2-3, KANDA-SUDAMACHI
CHIYODA-KU, TOKYO 101, JAPAN
TELEX: 2225206 SECJPN J
TEL: (03) 258-9506 .
FAX: (03) 258-9695
SAMSUNG SEMICONDUCTOR EUROPE GMBH:
MERGENTHALER ALLEE 38-40
0-6236 ESCHBOflN, WIG
TEL: 0-6196-90090
FAX: 0-6196-900989
TELEX: 4072678 SSED
SAMSUNG (U.K.) LTD.:
SAMSUNG HOUSE 3 RIVERBANK WAY
GREAT WEST ROAD BRENTFORD
MIDDLESEX TW8 9RE
TEL: 862-9312 (EXT) 304
862-9323 (EXT) 292
FAX: 862-0096, 862-0097
TELEX: 25823
SINGAPORE OFFICE:
10 COLLYER QUAY H14-07
OCEAN BUILDING S'PORE 0104
TEL 535-2808
FAX: 532-6452
PRINTED IN KOREA
AUGUST, 1990
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