1993_Motorola_Optoelectronics_Device_Data 1993 Motorola Optoelectronics Device Data
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Introduction
Quality and Reliability
Selector Guide
Optoisolators/Optocouplers Data Sheets
SOIC-8 Small Outline Optoisolators Data Sheets
POWER OPTO Isolators Data Sheets
Discrete Emitters/Detectors Data Sheets
Slotted Optical Switches Data Sheets
Fiber Optics Data Sheets
Emitter/Detector Chips Data Sheets
Applications Information
Tape and Reel Specifications and
Surface Mount Package Information
Package Outline Dimensions
Appendices
Index and Cross Reference
ItII01·0ROLA
OPTOELECTRONICS
DEVICE DATA
The information in this book has been carefully reviewed and is believed to be accurate; however, no responsibility
is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
devices any license under the patent rights to the manufacturer.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims
any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and
do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer
application by customer's technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems
intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other
application in which the failure of the Motorola product could create a situation where personal injury or death may
occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer
shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attomey fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that Motorola was negligent regarding the design or manufacture of the part. Motorola and ® are registered
trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
T.
Power Opto is a trademark of Motorola Inc.
ST is a registered trademark of AT&T
Thermal Clad is a trademark of the Bergquist Company.
© Motorola, Inc. 1993
"All Rights Reserved"
Printed in U.S.A.
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Section One
Introduction
General Product Information ................ 1-2
The Motorola Spectrum of
Optoelectronics ........................... 1-2
Emitters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1-2
Detectors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1-3
Fiber Optics ................................. 1-4
Optoisoiators ................................ 1-4
Optointerrupters . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 1-5
Chips ....................................... 1-5
Custom Optoelectronic Sensing
Modules ................................... 1-5
1-1
General Product Information
Motorola Optoelectronic products include gallium arsenide
and gallium aluminum arsenide infrared-emitting diodes,
silicon photodetectors, optoisolators, power optoisolators,
slotted optical switches and emitters/detectors for fiber optic
communication systems. Emphasis is given to custom
assemblies for use in specific automotive, industrial and
consumer applications.
Technology leadership in optoelectronic products is demonstrated by state-of-the-art 800 volt, zero-crossing triac drivers
(MOC3081); the industry's only standard high temperature
Darlington isolator (MOC8080) and the industry's only supplier of standard products with 7500 Vac peak isolation voltage.
The broad optoisolator line includes nearly all the transistor,
Darlington, triac driver and Schmitt trigger devices now
available in the industry. Motorola optoisolators come in the
standard 6-pin DIP package, and the new small outline
SOIC-8 style, surface mount package. Each device is listed in
the easy-to-use Selector Guide (Section 3) and a detailed data
sheet is presented in a succeeding chapter.
The Motorola Spectrum of OPTOELECTRONICS
Optoelectronics is a special branch of semiconductor
technology which has come into prominence during the last
fifteen to twenty years. Solid state optoelectronic components
have proven to be versatile design tools, offering the engineer
inexpensive, reliable alternatives to their bulky predecessors.
Solid state light emitting diodes (LEDs) in the visible portion
of the electromagnetic spectrum have virtually eliminated the
usage of incandescent lamps as panel indicators. Infrared
emitters and silicon photodetectors are finding wider application as sensor pairs, replacing electro-mechanical switches.
Optoisolators are being designed into circuits previously using
small mechanical relays and pulse transformers.
Over the years, solid state optoelectronic technology has
advanced dramatically. Research into new and improved
materials and processing techniques have led to devices
having higher efficiencies, improved reliability, and lower cost.
Emitters
Early emitters, both itisible and infrared, suffered from low
power output and rapid power output deterioration (degradation) when compared to present day devices. Emitter chip
materials, commonly referred to as III-V compounds, are
combinations of elements from the III and V columns of the
periodic chart. The P-N junction is formed by either diffusing
or by epitaxially growing the junction. Typical materials used
for emitters include gallium arsenide (GaAs) and gallium
aluminum arsenide (GaAIAs), among others.
When a forward bias current (IF) flows through the emitter's
P-N junction, photons are emitted. This is shown schematically in Figure 1. The total output power (PO) is a function of the
forward current (IF), and is measured in milliwatts. Likewise,
the axial radiant intenSity (10) of an emitting device, which is
the portion of the total emitted power radiated within a
specified cone angle directly on axis, is also a function of this
forward current (IF), and is measured in milliwatts per
steradian.
Figure 1. The LED
Motorola's line of emitters operate at wavelengths of either
660, 850 or 940 nanometers (nm). See Figure 2. This
encompasses the red and the near infrared portions of the
electromagnetic frequency spectrum. Emitters of various
wavelengths are produced for the purpose of optimizing
system efficiency, when the emitter is operated in conjunction
with a variety of applications and environments.
The 940 nm emitters are the most cost effective, however,
their spectral emission is not ideally matched to that of the
silicon detectors. Most applications can tolerate a certain
amount of spectral mismatch, and this sacrifice is generally
justified by the devices' lower price. Almost all optoisolators,
for example, use the 940 nm emitter.
The 850 nm emitters have a peak emission which almost
exactly matches that of silicon. This emitter finds usage in
applications where this efficiency, and the emitter's faster
speed, are the primary concerns.
The 660 nm emitters are not well matched to silicon, but are
ideal for use in plastic fiber optic systems. Plastic fiber has a
characteristic attenuation curve which reaches a minimum at
660 nm. This attenuation is the predominant factor to consider
when deSigning a plastic fiber system.
1-2
- - - SIUCON DETECTORS
1 GaAlAs 660 nm EMITIER
2 GaAlAs B50 nm EMITIER
3 GaAs 940 nm EMITIER
-100
/
... .'"
.....
.,'
I
1
600
h"-..",..
\
/
500
,"
\
\
"\ 1'.
~- r-3I
700
BOO
900
A., WAVEUENGTH (nm)
1000
,
PHOTODIODE
PHOTOTRANSISTOR
PHOTODARUNGTON
PHOTO SCHMITI
1100
Figure 2, Emissivity versus Wavelength
The above emitters find wide usage in a variety of isolating,
sensing, remote control and fiber optic applications.
Newly developed materials and refinements in chip processing and handling have led to more efficient and more
reliable emitters. New packaging techniques have made low
cost plastic devices suitable for applications formerly requiring
glass lensed units, by providing efficient molded-in lenses. In
this way, higher on-axis radiant intensities can be achieved,
for a given amount of total radiated power. A narrow radiation
angle provides for a lower drive current when operating in a
configuration where the opto detector is on-axis with the
emitter, such as in sensing applications or when launching
power into an optical fiber. When a very wide or off-axis
viewing angle is required, such as in a remote control
situation, emitters with less directional lenses, or unlensed
emitters are generally used.
Motorola's selection of emitters includes the low-cost plastic
Case 422A devices, such as MLED91, MLED96 and
MLED97. Also in a plastic package is the remote control
emitter, MLED81.
Metal and glass packages, such as the TO-18 (MLED930)
are utilized in applications where high axial intensity or
absolute hermeticity are essential.
Advances made in emitter technology over the years have
eliminated many of the problems of early-day devices. Even
the problem of degradation of emitter power output over time
has been brought to a level which is tolerable and predictable.
When coupled to a silicon detector, today's devices can be
expected to lead a long and useful life.
h"-..",..
ae
ZEROCROSS
CIRCUIT 1--<---0
[
TRIAC DRIVER
Figure 3, Light Sensitive Detectors
Recent developments in detector technology have led to
larger and more complex circuit integration. Photodetectors
incorporating Schmitt trigger logic outputs are becoming
increasingly popular in applications requiring very fast speed,
hysteresis for noise immunity, and logic level outputs.
Motorola introduced the world's first photo-triac driver, a
planar silicon device capable of controlling loads on an ac
power line. This was followed by the zero- crossing triac driver,
also a Motorola development. This device stands as a classic
example of opto technology's dramatic progress. Bipolar
circuitry, photo-optic technology, high voltage solid state
physics and field effect transistor (FEn technology are all
incorporated on a monolithic integrated circuit chip inside this
device.
Detectors
As emitters have developed over the years, photodetectors
have also advanced dramatically. Early phototransistors and
photodiodes were soon joined by photodarlington detectors,
and then by light-activated SCRs. Innovations in design have
created devices having higher sensitivity, speed and voltage
capabilities. A variety of detectors is shown in Figure 3.
1-3
Future trends pointto even higher performance characteristics and more circuit integration in photodetectors.
Detectors, like emitters, are available in plastic and in
lensed metal packages.
Various geometric designs have been used over the years
for the internal light cavity between the emitter and detector.
Motorola is the industry leader in isolation technology. AlI6-pin
optoisolators are guaranteed to meet or exceed 7500 Vac (pk)
input-to-output isolation. See Figure 5.
Fiber Optics
WHITE OVER MOLD (EPOxy)
Motorola offers devices specifically designed for plastic
fiber systems.
For low cost plastic systems, Motorola's POF (plastic
optical fiber) series is the most economical way to go. Using
the MFOE76 emitter, distances of up to 180 meters can be
achieved, depending on the MFOD detector which is selected.
Convenient termination techniques make the POF system the
first truly practical fiber optic system for general purpose
usage.
Optoisolators
Optoisolators, a block diagram of which is shown in Figure
4, are devices which contain at least one emitter, which is
optically coupled to a photodetector through some sort of an
insulating medium. This arrangement permits the passage of
information from one circuit, which contains the emitter, to the
other circuit containing the detector.
Because this information is passed optically across an
insulating gap, the transfer is one-way; that is, the detector
cannot affect the input circuit. This is important because the
emitter may be driven by a low voltage circuit utilizing an MPU
or logic gates, while the output photodetector may be part of
a high voltage DC or even an ac load circuit. The optical
isolation prevents interaction or even damage to the input
circuit to be caused by the relatively hostile output circuit.
The most popular isolator package is the general purpose
six-pin DIP, or dual in-line, package. Motorola also offers a
small outline surface mountable SOIC-8 package along with
6-pin surface mount leadform options. This offers answers to
many problems that have been created in the use of insertion
technology. Printed circuit costs are lowered with the reduction of the number of board layers required and eliminates or
reduces the number of plated through-holes in the board,
contributing significantly to lower PC board prices.
ISOLATING
DIELECTRIC
(UGHTPIPE)
Figure 4. Block Diagram of Optoisolator
1-4
THICKNESS THROUGH
INSULATION
Figure 5. Geometric Design for Optoisolators
The wide selection of photodetectors mentioned earlier is
also available in the isolator packages. A variety of optoisolators is shown in Figure 6. With the emitters and detectors both
sealed inside an ambient-protected package, the user need
not· be concerned with any of the optical considerations
necessary with separate packages. An important operating
parameter of the isolator is efficiency. This parameter defines
the amount of input (emitter) current that is required to obtain
a desired detector output. In the case of transistor or
darlington output isolators, this efficiency is referred to as
"current transfer ratio, or CTR. This is simply the guaranteed
output current divided by the required input current. In the
case of trigger-type isolators, such as one having Schmitt
trigger (logic) or triac driver output, efficiency is defined by the
amount of emitter current required to trigger the output. This
is known as '10rward trigger current or 1FT.
Efficiency and isolation voltage are two of the most
important operating parameters of the optoisolator.
All Motorola six-pin DIP optoisolators are recognized by the
Underwriters' laboratories Component Recognition Program. It should be noted that this recognition extends up to
operating voltages of 240 volts ac(rms). Under UL criteria,
these devices must have passed isolation voltage tests at
approximately 5000 volts ac peak for one second. In addition,
Motorola tests every six-pin DIP optoisolator to 7500 vac peak
for a period of 1 second. Also, Motorola's six-pin DIP
optoisolators are offered in a variety of lead formltrim options.
See the section on Package Dimensions for more detailed
information.
All Motorola 6-pin optoisolators are approved by VDE, the
optoisolator standard which is accepted in most European
countries. Check the Motorola data sheet section for specific
information on approvals to various VDE norms.
Opto Interrupters
Darlington
AC Input-Transistor Output
Assemblies consist of one or more emitters and detectors
in a special purpose package. Common assembly configurations include multiple detector arrays, slotted optical switches
and reflective optical sensors. A slotted optical switch is a
transmissive device made up of an emitter and a detector
inserted into a housing. The housing serves to maintain optical
alignment between the emitter and detector and to space
them apart from one another to form a sensing area, usually
an air gap, between them. These devices perform the same
function as optoisolators, with the added feature of mechanical interruptibility. This enables them to detect the presence of
an object, or its speed, or in the case of a dual-channel device,
its direction of travel. Slotted optical switches, also known as
interrupters, are available in a variety of package styles to
accommodate a range of size and mounting restrictions.
Applications for slotted optical switches include paper
sensing in printing and copy machines, cursor controls in
video game track balls and computer mice, motor speed
tachometer sensors, position sensing in computer disk and
tape drivers, and as a replacement for mechanical switches in
machine control equipment. Angular position can be monitored as well, by means of an optical shaft encoder.
A reflective optical sensor is another type of opto assembly.
This incorporates an emitter and a detector in a common
housing, and is designed so that the emitted radiation strikes
the target object and reflects back to the detector. While the
reflective sensor is somewhat trickier to use than the slotted
optical switch, it is popular in locations where there is no
access to the opposite side of the target object. It is essential
that the operating environment around the reflective sensor be
free from unwanted stray light sources and reflective surfaces.
Applications include end-of-tape sensing, paper sensing and
coin-sensing in vending machines.
Motorola has the capability to produce optical assemblies
to many custom configurations. Contact your local Motorola
sales office for information on this option.
Schmitt Trigger
Triac Drivers
PHASE CONTROLLED
"RANDOM
ZERO CROSSING CIRCUIT
Chips
Many of the Motorola's emitters and detectors are available
in chip form. Please refer to the appropriate section of this
Data Book for specific chip information.
Figure 6. Various Optoisolator Configurations
Motorola Custom Optoelectronic Sensing Modules
Background
From its inception in 1968, the Motorola Semiconductor
Sector's Optoelectronics Operation has grown to be a major,
broad-based manufacturer of infrared opto components.
Along with discrete gallium arsenide emitters and silicon
detectors, the portfolio includes both through-hole and surface
mount optoisolators, power control opto units, opto interrupters, fiber optics components and high power optocouplers.
Motorola is in the enviable position of being one of the largest
manufacturers of quality optoelectronics components in North
America. In 1984, the product offering was further enhanced
by the addition of CUSTOM OPTO MODULES.
Why would a Motorola operation which has built a
reputation in semiconductor components branch into hybrid
assemblies? CUSTOMER SATISFACTION! One of the major
automobile manufacturers came to Motorola Opto with a
quality problem involving a small, semi-custom device being
1-5
applications but in industrial and computer segment challenges as well.
Millions of custom modules, capable of meeting the most
stringent reliability requirements, have been shipped to both
automotive and industrial customers over the last four years.
The return rate for quality issues on these units has been close
to zero. Custom Modules has the honor of having received the
prestigious Ford Q1 award from both the engineering and
manufacturing operations.
purchased from another vendor. Motorola quickly responded
and provided a superior part, and ultimately a lower cost. From
this innocuous beginning, other applications of a more custom
nature opened up and the hiring and staffing of a development
group for custom product began. By 1991, Custom Opto
Assemblies accounted for a significant portion of the revenue
generated by the Optoelectronics Operation.
What Are Custom Opto Modules?
Why Use Custom Modules?
Custom Opto Modules are standard Motorola OptoelectroniCS components packaged together with additional signal
conditioning circuitry in a customized mechanical housing to
provide a sensing unit which is ready for immediate installation
by the original equipment manufacturer. In other words, "A
CUSTOMER-SPECIFIC HYBRID ASSEMBLY." Special
lenses and circuit techniques can be incorporated to tailor the
optical path in order to optimize the sensor for each individual
requirement. Among customer options available are signalconditioning circuitry using either through-hole or surface
mount printed circuit boards, digital or analog outputs, any
type of electrical connector, either integrally mounted to the
housing or on fly leads, and custom mechanical housings to
fit any shape specified. In addition, fiber optic cables can be
integrated right into the assembly, taking advantage of hot
alignment to insure that maximum power is launched into the
fiber.
Either transmissive or reflective sensing is available as
needed to fit any application. Prototype tum-around is rapid
and precise. Machined sample parts have been delivered in
as little as three weeks from the initial customer contact. In
addition to the In-house capabilities in optoelectronics components, the design team can draw from the entire line of
Motorola Semiconductor products, and utilize the resources
of the Corporate Research Labs to optimize product design.
Outside the company, the Custom Opto Module Team has
developed a stable core of suppliers to provide all of the other
pieces necessary to produce application-specific assemblies.
Custom Modules can offer a significant advantage from a
standpoint of overall system cost. While not intended to be
competitive with a single component, the overall cost to the
customer of the total application can be greatly reduced by
having much of the additional circuit requirements and
packaging included in a module. By purchasing a value-added
component, the non-electronic OEM is freed of the necessity
of having an electronic assembly area, or of having to contract
the assembly in another facility. Inventory issues are simplified
by having only one part type rather than stocking all of the
individual components necessary to make up the module.
Experience in module assembly and coordination of
components allows Motorola to begin the learning curve for at
a more advanced pOint, resulting in still larger savings to the
customer.
On the performance side, the optoelectronic circuitry can be
optimized to give maximum sensitivity, and frequency response. Higher resolution and accuracy are possible, since all
olthe components and mechanical parts have been optimized
by design to work together.
Applications
The list of potential applications is limited only by the
imagination of the user. Motorola has successfully supplied
Custom Modules to automotive, industrial, consumer and
computer peripherals manufacturers. Some of the potential
applications are listed as a reference. The list is by no means
all-inclusive, and the ready availability of low cost sensing
modules opens up new opportunities every day.
Where Is Our Strength?
The customer-oriented deSign team consists not only of
experts in electro-optics, but also includes engineers with
expertise in printed circuit board assembly, mechanical
packaging, reliability, production, environmental testing, and
marketing. The Optoelectronics engineering group holds a
commendable portfolio of 65 patents, more than half for
breakthroughs in the design of Custom Modules. Unlike
typical semiconductor manufacturers, the Custom Opto
Modules Team specializes in packaging innovation.
The Modules Team's strength lies in CONCURRENT
ENGINEERING. Starting early in the project, ideally before
the design cycle is very far advanced, Motorola's engineers
work closely with the customer's project engineers to provide
a SENSING SOLUTION rather than just a component to fill a
pre-defined socket. Including the customer as a partiCipating
member of the design team results in a more direct path to the
final answer to his sensing problems and greatly enhances the
probability of providing exactly the right solution. Success,
shown through satisfied customers and continuing shipments,
has been amply demonstrated not only in automotive
1-6
Automotive Applications
Automatic Wiper Control
Steering Rotational Sensor
Speedometer Sensor
Crank Angle Sensor
Remote Audio Link
Door Lock Monitor
Load Leveling
Ambient Light Detector
Headlight Dimmer
Dash Backlight Control
Air Conditioner Control
Remote Controls
Ride Control
Industrial/Reprographic Applications
Paper Sensing
Edge and End Detection
Positioning
Background Density Sensor
Weight and Stiffness
HVAC Control
Automatic Light Control
Automatic Parts Counting
End-Of-Ribbon Detecting
Bar Code Detection
Motion and Direction
Detection
Speed Detection
Small Drop Detection
manufacture its GaAs LEDs to insure the highest level of
performance with the lowest possible degradation of power
output over time and temperature. These LEDs make up the
most basic building blocks of the Custom Modules.
Motorola is uniquely organized to develop and manufacture
low cost hybrid assemblies, each tailored specifically to the
individual customer's needs. The Quality and Reliability of
Motorola's Custom Opto Assemblies are built in from the
beginning. Each module is designed from the start for
manufacturability, with consideration taken to insure that all of
the processes will be compatible with Motorola's corporate
edict of Six Sigma product to its customers. A strong
commitment to concurrent engineering is normal operating
procedure.
Is Motorola Really The Benchmark
In Custom Opto?
As a result of years of experience in working with
demanding customers to provide solutions where previously
there had been no solution, Motorola has developed a solid
understanding of the sensor market. The dedication of the
team members and their "Can-Do" spirit, combined with a
wide open charter to get the job done, have resulted in an
outstanding track record of accomplishments in the Opto
sensing field.
The Module is only as strong as its weakest component, and
power degradation has been the nemesis of optoelectronic
performance from the beginning. Motorola has spent two
years in developing a world-class "Low-Deg" process to
SOLUTIONS TO YOUR CUSTOM SENSING NEEDS!
1-7
1-8
Section Two
Quality and Reliability
Optocoupler Reliability & Quality. . . . . . . . . .. 2-2
Design Driven LED Degradation Model for
Optoisolators . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 2-3
Reliability Testing Considerations for
Optoelectronic Sensors .................. 2-7
Dome Package Evaluation .................. 2-10
Optocoupler Process Flow and QA
Inspections ............................... 2-11
Opto Case 4221422A Package .............. 2-13
2-1
Optocoupler Reliability & Quality
Reliability Considerations
but also give higher junction leakage. Low doping concentrations are necessary for long carrier lifetimes, but also create
more chance for surface inversion which leads to leakage
instability. High electrical gains magnify currents due to
captured photons but do the same to junction leakage
currents.
Emitter Life
The area of optocoupler reliability that is of most concern to
users is the life olthe IRED (Infrared Emitting Diode). Anything
which alters the carrier-recombination process (the light-emitting mechanism) will cause a decrease in coupling efficiency
with time. There are several possible ways this can happen,
depending upon the device and process design:
Package Integrity
1. Propagation of initial crystal stress or damage through the
device in the vicinity of the junction can cause an increase
in non-radiative recombination, since carrier lifetimes are
poor in such regions. Motorola now uses exclusively a
Liquid Phase Epitaxial (LPE) process which allows a
stress-free growth and minimizes the effect of substrate
integrity, since the junction is formed some distance from
the substrate.
There are several packaging considerations which are
unique to an optocoupler. It is necessary, of course, that light
be efficiently coupled from input to output. As a result, most
optocouplers have internal constructions that are radically
different than other semiconductor devices and use materials
that are dictated by that construction. Just as parametric
stability of the IRED and detector chips used in an optocoupler
is important, so also is it importantthat package parameters be
stable. Areas of concern are:
2. Damage caused by assembly of the IRED chip into a
package can also cause degradation, usually observable
in less than a few hundred hours of operation. Motorola
uses automatic die attach and wire attach equipment, so
that operator control of pressure is eliminated. In addition,
the application of a die passivation during assembly
insures that the IRED chip is protected from external
mechanical stress.
1. Isolation Voltage - Together with the transmission of a
signal from input to output, the ability of an optocoupler to
isolate its input from high voltage at its output is probably its
most important feature. Human safety and equipment
protection are often critically dependent upon dielectric
stability under severe field conditions. Motorola uses a dual
molding scheme, whereby an opaque epoxy overmold
surrounds an infrared transparent epoxy undermold. Both
materials are very stable under repeated applications of
high fields and the integrity of the interface between the two
materials is assured due to the basic similarity of the
compounds. Industry leading isolation voltage capability,
both in terms of voltage level and stability, is the result.
Motorola specifies all of its optocouplers at 7500 Vac peak
isolation.
3. Impurities which exist in the chip as a result of process
contamination can be detrimental if they are mobile in
gallium arsenide. Forward current bias will energize these
impurities and the current drift will draw them toward the
junction where they can affect recombination to a greater
degree. Proper process design and control of equipment is
necessary to minimize this effect. Motorola continually
audits its process to provide the necessary monitor on LED
life characteristics.
2. Mechanical Integrity - It is also important that the
package be capable of Withstanding vibration and temperature stresses that may be found in the field environment.
Motorola's solid package construction and the use of
repeatable automatic ball bond wire attach equipment
provide this performance at rated conditions.
4. Impurities external to the chip can be drawn into the device
and affect recombination under certain conditions.
Detector Stability
3. Moisture Protection - Relatively high humidity is characteristic of many field environments, although usually not on
a continuous basis. Motorola's chip deSign minimizes the
effect of moisture internal to the package, usually by
covering the aluminum metallizations with protective passivations. The package materials typically provide stable
isolation voltage after well over 1000 hours of continuous
exposure to a high temperature, high humidity environment
and will provide very long term service under intermittently
humid conditions.
While the detector has a lesser overall influence on the
reliability of an optocoupler than the IRED (due to the
difference between gallium arsenide and silicon characteristics), there still remain important considerations here as well.
These primarily are measures of its ability to remain reliably
"off' when the IRED is not energized, requiring that breakdown
voltages and leakage be stable.
Efficient optically sensitive semiconductors place an extra
burden on the manufacturer to produce stable devices. Large
surface areas are needed to capture large amounts of light,
2-2
Design Driven LED Degradation Model for Optoisolators
Results from a matrix of temperature and current stress
testing of optoisolator LEOs are presented. Extensive statistical analysis of this large data base is shown, along with the
method used to define the shape of the LED degradation
curves. A basic equation was developed based on the
Arrhenius model for temperature dependent effects and the
author's experience with the physics of LED degradation. Also
shown are the results of multiple regression analysis of the
plotted points and how they were used to resolve the
constants associated with this equation. In addition, explanations are presented of unusual findings and their causes. This
equation can be used by circuit designers to predict LED
degradation for any time, operating current and ambient
temperature (an industry first). A graph of percent degradation
versus time is shown, and was derived by plugging into the
equation typical use currents and temperatures. A further
refinement is presented that describes degradation in terms of
a "Six Sigma" distribution, giving the ability to encompass
variations encountered during production.
LED Degradation
LED degradation occurs when the efficiency of radiative
recombination of minority carriers is decreased with time. 2 At
Motorola the following processing/assembly steps have been
found to affect LED performance as it relates to LED
degradation (Figure 2).
1. Wafer related defects
A. Zn diffusion defects
B. Substrate dislocations
C. Surface polishing
D. EPI defects
E. Doping concentration
F. Junction heating
G. Ohmic contact stress
2. Assembly related defects
A. Die attach stress
B. Wire bond damage
C. Molding stress
Background
Light Emitting Diodes (LEOs) are devices which use PN
junctions to convert electrical current to light. This emitted light
can be of the visible or infrared wave length. In the case olthe
LEOs in Motorola's optocouplers, this light is in the infrared
(-940 nm) wave length. The externally applied current injects
minority carriers which recombine with majority carriers in
such a way as to give off light (or photons). This process is
called "radiative recombination."1 Figure 1 depicts the overall
construction of Motorola's 940 nm LED die.
ZINC
DIFFUSION
SURFACE
POUSHING
DEFECTS
EPI
DEFECTS
ZINC DIFFUSION
P·GaAs
N-GaAs
NON·RADIATIVE
SURFACE
RECOMBINATION
AI
DIE ATTACH
STRESS
PN
~______________~__--JUNcnON
SUBSTRATE
DISLOCATIONS
lEAD FRAME
Figure 2_ LED Degradation Sources
N·GaAs(SI)
Approaches
In the past, a circuit designer needing information about
LED degradation in optoisolators (couplers) would only
receive curves that depicted LED degradation over time for a
specific drive current, measurement current and ambient
temperature. This forced the designer to assume a very worst
case degradation and excluded the use of couplers in circuits
requiring tighter limits on the amount of allowable degradation.
No one in the Optoisolator industry supplied data about their
LED performance to allow the deSigner to predict the amount
of LED degradation for his specific application.
Figure 1. Amphoterically Doped LPE Grown Junction
The junction is an amphoterically doped liquid phase
epitaxial (LPE) grown junction on a Gallium Arsenide (GaAs)
substrate. The back side of the die uses AuGe metal to form
an eutectic attach to the lead frame. A very thin Zn diffused
layer is used to spread current across the junction. The top AI
metal is used to provide ohmic contact for a wire bond
connection.
2-3
Solutions
Accelerated Testing
Over the past three years Motorola's Optoelectronics
Operation has invested significant resources to improve LED
degradation performance. More than thirty experiments were
designed and performed generating some 30 megabytes of
computer data in an effort to identify and prove out the LED
wafer processing improvements. These improvements include a number of critical wafer processing steps that required
change and exact control.
In an effort to provide customers with information that would
help them predict eTR degradation at any current and
ambient, a temperature and stress current matrix evaluation
was designed (see Table 1).
Ambient Stress Temperature
Initial Room Temperature Testing
0.5mA
Group A
30 Devices
GroupB
30 Devices
Groupe
30 Devices
3mA
GroupO
30 Devices
GroupE
30 Devices
Group F
30 Devices
50mA
GroupG
30 Devices
Group H
30 Devices
Group I
30 Devices
Transistor optocouplers (see Figure 3) samples were
assembled using the above improvements and placed on LED
burn-in.
~,
Table 1
~
This testing led to results on a total of 270 devices with
measurements taken at 6 times (0, 71, 168,250,500 and 1000
hours). The measurements were taken on IB and Ie at 4
current levels (0.5, 3,10 and 50 mAl. This produced a total of
or 12,960 data points.
The following (Table 2) is a summary of the results of the
testing expressed in average percent degradation of Ie and IB
from 0 to 1000 hours. IB is the transistor base photo current
generated by the LED light output. Ie is the collector current of
the phototransistor and is related to the LED light output
multiplied by the hFE of the transistor. Note that the 0.5 mA
measurement results are not included. This was because the
detector current generated at 0.5 rnA LED drive current was
very low (nA range). It was determined that measurement
error was Significant at this very low current.
t
Figure 3. Transistor Optocoupler
The conditions were room temperature at a forward current
(IF) stress of 50 mAdc. The transistor was not biased. The ratio
of the transistor collector current (Ie) to the IF current is the
measurement used to gauge LED light output. This ratio is
known as Qurrent Iransier Batio (eTR). LED light output was
measured at specified intervals during testing. The conditions
for measurement were:
IF=10mA;VeE=10V.
Ambient Stress Temperature
Figure 4 is a graph of the average percentage degradation
over 10,000 hours. The dotted lines represent the capabilities
olthe measurement system. As can be seen, little degradation
occurred. Data generated from samples provided to one of our
customers confirmed these results.
B5°e
ro-
.,"
U
.,
-'
u.
0
3mA
0
w
.J
'--
90
c:
Q)
!!!
Ii)
95
"
U
E
!!!
a:
iii<::
~
~
100
t;
c:
c:
105
-'
0.5mA
SOmA
"gj
(!)
105°e
125°e
Ie
18
Ie
18
3mA
10mA
50mA
4.0
3.6
1.0
2.9
4.7
6.B
11.7
6.3
0.7
B.l
B.4
B.2
24.2 17.3
21.7 17.4
2.4 lB.3
3mA
10mA
SOmA
5.5
4.9
1.2
4.2
4.B
7.7
13.3
7.6
O.B
9.0
9.3
10.6
23.5 16.7
21.0 16.9
2.1 lB.2
3mA
11.1
B.O
1.4
B.l
B.l
10.6
23.0
17.2
2.3
17.2 27.1 20.3
15.5 21.6 19.1
12.3 3.3 17.6
::;: 10mA
SOmA
Ie
18
71'
85
Table 2
80 10
100
1000
Analysis of Results
10000
HOURS
A review of the above results reveals an unusual response
for Ie degradation for the 50 rnA measurement current. The
percent degradation is much less when compared to the
Figure 4. Plot of Average LED Degradation
@ IF(stress) 50 rnA; IF(rneas) 10 rnA @ 25°C
=
=
2-4
10 mA IB measurement. This apparent improvement in CTR
is actually a function of the phototransistor's hFE changing. To
explain, the following graph (Figure 5) represents the hFE of
the transistor versus drive current (IB).
490
480
Ii'.
470
460
~
.c
450
440
430
"
~ f-
420
il
'\ l - V
.I
r-... . /
IF=1OmA
410
t
In the case of this evaluation, DOE was derived by
measuring IB at the IF delta of 3 to 10 mA. A summary table of
the average DOE degradation percent from 0 to 1000 hours is
shown below (Table 3). The calculated junction temperatures
in degrees K are in parenthesis.
Ambient Stress Temperature
INCREASING
105°C
125°C
0.5mA
Group A
5.4
(358)
Group B
8.5
(378)
Groupe
17.4
(398)
3mA
GroupO
5.0
(359)
GroupE
9.4
(379)
Group F
17.0
(399)
SOmA
GroupG
8.1
(371.5)
GroupH
14.8
(391.5)
Group I
18.6
(411.1)
1\ "-
"-
IIF I 50
r
A
400
5.27.49.411.313 1516.818.8273340 45 51 556065
~
85°C
IB(~)
IF=3mA
Table 3. Average OQE Oegradation (0/0) 0 to 1000 Hours
Figure 5. hFE versus Photo Generated Current (Ie)
A plot of these values on a graph (Figure 7) compares the
DOE degradation at 1000 hours to LED junction temperature.
The junction temperature was calculated based on a Theta J
of 180°CIW. Note that the percent degradation appears to be
affected only by overall junction temperature. That is, only the
junction heating due to the surrounding ambient and the
heating affects of LED current cause degradation, and not the
affects due to current density (Group G - Group B).
What this means is that as Ie decreases during stress
testing (as would be the case with LED light output decreasing) in the area of 65 to 55 !lA, the hFE rises. Therefore as the
LED degrades at high IF currents (50 mAl the hFE actually
increases, compensating for the decrease in LED light output
degradation. The overall result is that the CTR degradation
appears to be less at the higher measurement currents.
This problem shows the need to express LED degradation
more clearly. By using a term called Differential Ouantum
Efficiency (DOE) a truer picture of LED degradation can be
obtained. DOE can be graphically pictured (see Figure 6).
100
~
..............
10
w
g
IB
1
t-0. 1
2.2
144°C
2.4
84°C
2.6
2.8
lOOO1T(°K)
4O°C3.2
3.4
Figure 7. OQE Degradation (0/0)
A besttit straight line can be drawn through these points and
its slope can be used to calculate the activation energy. A plot
of the relative DOE versus time for all the groups are similar to
B, E and H as shown in Figure 8.
Figure 6. OQE is Expressed as ~Ie Oivided by ~IF
2-5
1.00
0.98
a:
Lli
z
\..
0.96
0.94
'\
do 0.92
w
a0 0.90
w
~
w
a:
A further refinement to lhe above expression was made to
encompass the lot to lot variations that would be typically seen
in a large volume production mode. This was accomplished by
adjusting the constant "A" based on the Table 2 sample
distributions. The six sigma points of each group in the sample
were calculated and used to adjust their averages downward
(X bar + 6 sigma). Replotting the curves in Figure 9 would look
like those below In Figure 10. This predictability is made
possible through the LED wafer processing improvements
implemented, and the data analysis presented here.
.......
I\.
1".." --.
"" ""'"
..............
f"... ......,
0.88
"'"'
0.86
0.84
0.82 0
72
168
250
HOURS
.......
~
500
1000
90
Figure 8. Relative DQE Degradation (%)
These curves can be fit to a polynomial of the kind that
relates temperature to DOE degradation over time. This
relationship can be expressed as:
Relative DOE
~
80
t5
70
'"
(1)
"'lplrnA;
TA=40°c
-¢- IF=l rnA;
TA=70°c
. . IF=50rnA;
TA= 70°C
-G- IF = 50 rnA;
TA = 40°C
60
= 1+(1+e(A-Eafrj K) x In(1+t2 x e(EafrjK-B)))
50
1000
Where:
A & B = Constant
Ea = Activation Energy
TJ = TA + (VF x IF x Theta J) +273
K = Boltzmann's Constant (8.617 x10-5eV/OK)3
t = lime under stress testing
Theta J = 180°ClWatt
References
[1] Motorola Applications Note AN440, Motorola Optoelectronics Device Data Book, 02/89 DL118, REV 3.
By plugging in applicable junction temperatures and IF drive
currents, a prediction of degradation at any time can be made.
A few representative curves of temperature and drive current
are shown in Figure 9. By using this relationship, LED drive
currents can now be much more accurately chosen at circuit
deSign and can assure long operating life.
~
[2] J.R. Biard, G.E. Pittman, and T.F. Leezer. "Degradation of
Ouantum Efficiency in Gallium Arsenide Light Emitters,"
Proceedings of International Symposium on GaAs, Sept.
1966.
[3] Wayne Nelson, "Accelerated Testing," 1991, John Wiley
and Sons.
Acknowledgements
... Ipl rnA;
TA = 40°C
-¢- IF= 1 rnA;
TA = 70°C
"IF=50mA;
TA=70°c
-G- IF = 50 rnA;
TA = 40°C
92
~88
86
84
The author wishes to thank Dr. Daniel L. Rode for his
valuable assistance in the physical modeling of GaAs LED
degradation.
82
lKIooo
10000
HOURS
100000
Figure 10. Six Sigma Degradation
Conclusions
100
98
96
94
10000
HOURS
100000
Figure 9. Average Degradation
2-6
Reliability Testing Considerations for
Optoelectronic Sensors
Metal can packages have significant advantages in applications where harsh environments, especially high humidity are
encountered. This paper will discuss the reliability test issues
mostly related to the plastic inserts and their long term effect
on the performance of the optoelectronic sensor.
Abstract
With the increasing use of optoelectronic devices in a wider
variety of sensing applications that require longer life, a closer
look at reliability testing is needed. Applications in the
automotive arena (ride control and speed sensing), along with
office equipment (copy machines and printers), require longer
life under conditions with unique environmental stress for
optoelectronic sensors. These applications are the result of
using a combination of optoelectronic and mechanical solutions that present a challenge for reliability testing and
assessment. In addition, applications using solutions such as
motion anQior reflective sensing require careful consideration
from a reliability assessment standpoint. The use of the clear
epoxy plastics and cast resin components as inserts for
custom molded housing has made the cycle time from idea
inception to final product much shorter, but also presents
limitations on the types and levels of stress testing that can be
performed. This paper discusses a number of unique reliability
considerations that the optoelectronic sensor presents.
Reliability Tests
LED Stress Testing
One of the key reliability indices for any optoelectronic
device is the LED optical power output degradation. LEDs are
devices which use PN junctions to convert electrical current
into light (known as radiative recombination). This light can be
of the visable or infrared (-940 nm) wavelength. Degradation
is generally described as a reduction in the efficiency of
radiative recombination of minority carriers over time. Figure
2 details some possible sources of LED degradation from a
processing and assembly standpoint.
OHMIC CONTACT STRESS
ZINC DIFFUSION
DEFECTS
Background
Optoelectronic sensors, typically composed of a light
emitting diode (LED) and a photodetector are becoming more
pervasive in many applications. These applications range
from automotive and office equipment to home improvement
products. Solutions to sensing problems vary from the
standard motion sensing using slotted interrupters to clever
reflective techniques. Packaging technology has been changing as often as the applications require. Plastic housings with
clear plastic inserts made of epoxy that are molded or cast
have the significant advantage of low cost and faster
development times (see Figure 1).
ZINC DIFFUSION
P·GaAs
EPI
DEFECTS
N·GaAs
NON· RADIATIVE
SURFACE
RECOMBINATION
DIE ATIACH
STRESS
SUBSTRATE
DISLOCATIONS
LEAD FRAME
Figure 2. LED Degradation Sources
LEDWITH
MOLDED LENS
PHOTODETECTOR
"-
"" <
<
-
APERTURE--
Circuit designers obtain a very significant advantage if a
predictable amount of LED degradation can be calculated,
given a specific operating current and ambient temperature.
The following expression was developed for Motorola's
infrared LEDs:
% Deg = 100 x (1+(1+e(A-EafTjK) x
[1]
In(1+t2 x e(EafTjK-B))))
I>,"
)
HOUSING
----'
'-- ; -
Where:
A and B = Constants
Ea = Activation Energy
TJ TA + (VF x IF x Theta J)+273
K = Boltzmann's Constant
(8.617 x1D-5eV/oK)
t = Time under stress testing
Theta J = 180°ClWatt
=
[2]
This expression includes considerations for a six sigma
process distribution which makes it particularly useful by
encompassing lot to lot variations.
Figure 1. Typical SloHed Interrupter
2-7
Temperature Cycling
Many of the LEOs and photodetectors that are used in
optosensor assemblies are molded in epoxy plastic (see
Figure 3).
DIE COAT
larger CTE mismatch. Because of this, most of these
packages are restricted to temperature extremes of -25°C to
+ 70°C. With an epoxy package, thermal shock (liquid to liquid)
can be performed but the cast resin package will literally
shatter if subjected to these rapid changes in temperature.
Typically, the cast resin devices are molded into the panel
mount package configuration such as the T1-314 and T1 (see
Figure 4).
CLEAR
PlASTIC
Figure 4. Panel Mount LED
Moisture Testing
Figure 3. Case 422A Clear Epoxy Package
These plastic mold compounds are non-filled resin epoxies
that allow them to produce the clear packaging needed to
transmit / receive light. This compound has a glass transition
temperature of around 125°C and has a much larger
coefficient of thermal expansion (CTE) than the glass-filled
black epoxy used for most semiconductors.
Anotherfactor that affects temperature cycle reliability is the
need for a protective die coat over the LED die. This is needed
to cushion the GaAs die from the mechanical pressure of the
epoxy mold compound as it shrinks and expands. Mechanical
stress on the LED causes micro fractures that lead to the
so-called "dark line defect" and the resulting decrease in
power out. This decrease in light emission is believed to be
attributed to the formation of "non-radiative recombination
sites." It is theorized that when minority carriers recombine
with majority carriers in these sites, recombination occurs but
no photon is emitted. The effects of the mechanical stress (i.e.
non-radiative recombination sites) are not manifested until a
forward stress current is applied for a period of time, although
large decreases in light out become apparent in a short period
of time «72 hours). The addition of the silicon die coat
cushions the LED, but introduces the possible problem of
broken wire bonds due to the large mismatch in CTE between
the die coat (300 PPMPC), the epoxy (65 PPM/oC)13) and the
copper lead frame (16.4 PPM/oC). Although the photodetector
does not require the die coat (silicon die), the mismatch
between the epoxy and the copper lead frame still needs to be
evaluated for reliability through temperature cycling. The
typical temperature cycling conditions are -40°C to +1 OO°C,
air to air, 15 minutes at each extreme with < 15 seconds
transfer time.
The use of the cast resin packaging for LEOs and detectors
presents a similar problem, but with the added problem of even
As mentioned previously, the clear epoxy mold compound
has a large CTE. This factor, along with addition of moisture,
causes problems with lead-to-package sealing. If this lead-topackage interface is fractured from excessive expansion due
to excessive heat, then moisture can easily travel up the lead
and onto the die surface. As mentioned earlier, the glass
transition temperature for the clear epoxy is approximately
125°C. This limit precludes the use of autoclave (121°C, 15
PSIG) as an accelerated test. The results in Table 1 testify to
.
this limit.
Tests
Autoclave
Conditions
TA: 121'C;
RH:100%
PSIG:15
1:8 Hours
I: 16 Hours
I: 24 Hours
Sample
Size
Failures
49
49
49
0
6
17
(Resulls of Case 422A Auloclave lesting) [4]
Table 1
These results provide proofthatthis type of packaging is not
really capable of withstanding wave solder followed by an
aggressive wash cycle. Most manufactures are resigned to
using hand soldering and mild cleanups. The cast resin
devices, of course, cannot withstand the high temperature of
autoclave.
The use of biased humidity (TA = 85°C; RH = 85%) is
generally a much more useful test in detecting marginal
designs and poor performing mold compounds, along with
inconsistent assembly processes. In the case of phototransistors, the current must be monitored and controlled while
turning up the bias voltage. This is due to ambient light
entering the humidity chamber. The use of current limiting
resistors is strongly recommended. Once the chamber is
closed, the bias current will generally be close to the dark
current limit value. Of course, opening the chamber to remove
2-8
other samples during testing must be taken into consideration
and monitored accordingly.
performed by placing the sensors in a chamber of a specified
size with a specified amount of dust (Arizona type) and pulsing
the chamber with bursts of compressed air for about 5 hours.
Measuring optical coupling of the LED to detector initially, and
at the end of testing will identify designs with inadequate
coupling andlor devices with poor optical alignment.
Solder Testing
There are two types of solder testing that should be used to
evaluate the optosensors in plastic packages. Solder heat
testing (260°C for 10 seconds) is very effective in identifying
poorly performing mold compounds and lead frame designs.
Typical failures noted are lifted wire bonds and, in the case of
epoxy die attach, a lifted die. In addition, flux may wick up the
lead frame package seal area if the mold compound is not
adequately attached. Solderability testing (260°C with 90%
coverage) will not only identify plating problems, but will also
highlight any problems with cleaning agents that could harm
the plastic housings for slotted interrupters. Many of these
housings are polysulfone and can be damaged by Freon TMC
and alcohol. This is also the case when using similar solvents
during marking permanency testing. The polyester-type
housings are generally much less susceptible to this solvents.
Summarizing Results
Detailed analysis of testing results can be of significant
importance. Table 2 is an example of a method that can be
used to statistically characterize optosensor testing results.
Note that percentiles are given instead of average and sigma.
This is to provide a more realistic picture of the distribution,
since most devices undergo electrical screening which results
in lots that are skewed through parameter selection. Close
inspection of the delta shifts reveals the direction of shift and
changes in the shape of the distribution.
Conclusions
Dust Testing
Optical sensors offer a wide variety of solutions to problems
of motion sensing and other optical detecting. The use of cost
effective plastiC sensors and housings brings with them some
significant reliability testing issues that have been addressed
in this paper. Utilizing these tests and their results will provide
help in choosing appropriate designs, materials and assembly
processes that will give rise to a more reliable product.
This test is a very good method of asseSSing an optical
sensor that is to be used in an environment that is susceptible
to dust accumulation, particularly on the lens or in the aperture
slot of the slotted interrupters. This is valid in automotive and
some office equipment applications. Typically, this test is
Parameters
I
Device Type
Specification
Limit
PRE
POST
Delta Percent
NONE
NONE
I
Actual
Minimum
0.001
0.001
nA
nA
10
Percent
0.003
0.002
Median
nA
nA
0.026
0.017
nA
nA
NONE
0.0%
0.0%
0.0%
NONE
NONE
NONE
1.361 V
1.375 V
1.371 V
1.376 V
0.7%
2.0mW
2.0mW
90
Percent
O.OBl
0.054
nA
nA
Actual
Maximum
Maximum
Specification
Limit
14.35 nA
100~
nA
100~
7.664
0.0%
0.0%
NONE
1.3B7V
1.4V
1.408 V
1.BV
1.429 V
1.579 V
1.747 V
1.BV
0.1%
3.0%
12.B%
24.1%
NONE
2.059mW
2.113mW
2.172 mW
2.232mW
2.359mW
2.315mW
2.374mW
2.4BSmW
2.575mW
2.631 mW
12.4%
12.4%
14.6%
15.4%
11.5%
NONE
NONE
NONE
VF:IF=50mA
PRE
POST
Delta Percent
Po: IF=50mA
PRE
POST
Delta Percent
NONE
Table 2. H3TRB Test Summary (Example of data summary) (5)
References
[1] John Keller, "Design Driven LED Degradation Model for
Optoisolators" Proceedings of 42nd Electronic Components and Technology Conference, May 1992.
[3] Motorola Reliability Report, April 1991.
[4] Hysollnformation Bulletin E7-620A.
[2] Wayne Nelson, "Accelerated Testing," 1991, John Wiley
and Sons.
[5] Motorola Reliability Report, September 1991.
2-9
Optocoupler Dome Package
The DOME package is a manufacturing/quality improvement in that it represents a significant reduction in the
complexity of the assembly steps. This is consistent with
Motorola's goal of continual quality improvement by reduction
in process variations (in this case through assembly simplification).
The following reliability testing summary confirms the quality
of design and material selection.
THICKNESS THROUGH
INSULATION
Dome Package Evaluation
Package: 6-Pln DIP, Case 730A-04 (WHITE)
Parameters Monitored
Limits
Initial
Parameter
Conditions
Min
VR=3V
IF-10mA
VCE=10V
VCB=10V
IC=1 mA
IC=100J.lA
IE= 1ooJ.lA
VCE=120V
I.F=10mA
Ic=2mA
IF=50mA
f=60Hzt=1 Sec.
IR
VF
ICED
ICBO
V(BR)CEO
V(BR)CBO
V(BR)ECO
IC
VCE(sat)
VISO
End Points
Max
Min
Max
100 J.lA
1.5V
50nA
20nA
30V
70V
7V
2mA
100J.lA
1.5V
50nA
20nA
30V
70V
7V
2mA
0.5V
0.5V
-
5.35k
Life and Environmental Testing Results
Rejects
Test
IRED Bum-In
H3'rRB
HTRB
Intermittent Operating Life
High Temperature Storage
Temperature Cycle
Thermal Shock
Resistance to Solder Heat
Lead Pull
Conditions
IF = 50 mA t = 1000 Hrs.
TA = 85°C RH = 65%
VCB = 50 V, t = 1000 Hrs.
TA = 100°C VCB = 50 V
t = 1000 Hrs.
IF=50 mA IC = 10 mA
VCE= 10VTon =Toff= 1 Min
t = 1000 Hrs.
TA = 125°C t = 1000 Hrs.
-40°C to +125°C
Air-To-Air 15 Min at
Extremes 1200 Cycles
Liquid-TO-LIquid
O°C to +1 OO°C
500 Cycles
MIL-Std-750, Method
2031 260°C for 10 sec Followed by Vise
MIL-Sld-750, Method 2036 Cond A, 2 Lbs. 1 Min
2-10
Sample Size
Limit
Catastrophic'
100
71
0
0
0
0
80
0
0
100
0
0
99
58
0
0
0
0
100
0
0
50
0
0
5
0
0
Optocoupler Process Flow and QA Inspections
(Dome Package)
[JJ
[!]
IT]
m
PRE PROBE INSPECTION: A sampled microscopic
inspection of class probed wafers for die related defects on the
detector and emitter.
POST PROBE INSPECTION: Each lot of wafers is
sampled and inspected microscopically and electrically to
insure quality before shipping to the die cage. This includes
both detector and emitter.
MOLD INSPECTION: This is monitor inspection of a
sample of molded units for defects such as voids, incomplete
fills etc.
LEAD TRIM AND FORM INSPECTION: The final
trimmed and formed units are monitored through a visual
inspection.
~
QA VISO GATE: This is a sampled electrical high
voltage test of the capabilities of the device and assures the
100% Viso testing performed just prior is without error.
IT]
POST SAW INSPECTION: A sample of die is monitored by microscopic inspection for correct saw cut, and
checks for cracks, chips, foreign material and missing metal
are made. This includes both the detector and emitter.
[]I]
QA FINAL VISUAL INSPECTION: This is a final
external microscopic inspection for phYSical defects or damage, plating defects and lead configuration.
m
DIE BOND INSPECTION: This microscopic inspection checks both die for die placement and orientation, cracks,
chips and die attachment. In addition, a random sample of
both bonded die are pushed off and the percent of remaining
material evaluated.
00
WEEKLY LED BURN-IN AND TEMPERATURE
CYCLING AUDIT: Currenttransfer ratio (CTR) is measured on
a sample prior to and after the application of 72 hours of a high
forward LED stress current and the percentage change is
calculated. Also a sample of completed units is subjected to
300 cycles of air to air temperature cycling. This information
provides trend data which is fed back to direct assembly/processing improvements.
m
WIRE BOND INSPECTION: Wire bonds are checked
microscopically for placement, bond formation, damaged
wire, lifted bonds and missing wire. In addition, a random
sample of wire from the emitter and detector are subjected to
a destructive wire pull test.
[ill
m
QA VISUALIMECHANICAL AND ELECTRICAL
GATE: A random sample from each final test lot is electrically
tested to documented limits. In addition, marking and mechanical defects are gated.
QA INTERNAL VISUAL GATE: This is a sampled QA
gate to microscopoically inspect for all of the defects described
in numbers 4 and 5 above. All lots rejected are 100%
rescreened before resubmitting.
[ill
OUTGOING FINAL INSPECTION: Outgoing lots are
sample inspected for correct packing, part type, part count and
documentation requirements.
[IJ
QA VISUAL GATE: This is a sampled gate for the
quality and dimensions of the dome coating operation.
2-11
·Wafer Processing
Coupler Assembly, Test and Mark
2-12
OPTO Case 4221422A Package
Side-Looking Plastic Discrete Devices
The Case 4221422A package is a manufacturing/quality
improvement over other plastic side-looking products due to
its use of highly automated assembly processes. Superior die
placement yields maximum optical performance. A custom
designed optical grade mold with a state of the art mold
process controller guarantees the finest quality and best
reliability. The following life and environmental testing conditions are specified.
Life and Environmental Testing
Rejects
Test
Conditions
Sample Size
Limit
Catastrophic
Solder Heat
260°C for 10 sec
45
0
0
Solderability
Includes 8 hrs Steam Aging
10
0
0
Temperature Cycle
-4Q°C to 100°C, 15 min dwell,
immediate transfer.
1000 cycles
50
0
0
Thermal Shock
Liquid to Liquid
O°C to 100°C, 1 min dwell,
<15 sec transfer. 500 cycles
50
0
0
High Humidity, High
Temperature, Reverse Bias
(H3rRB)
TA 60°C, RH 90%
VCE 100% Rated
1000 hours
50
0
0
High Temperature Storage
(HTS)
TA 100°C
1000 hours
50
0
0
LED Burn-in
IF 50 mA TA
1000 hours
50
0
0
=
=
=
=
=
=25°C
2-13
2-14
Section Three
Selector Guide
Motorola's families of optoelectronic components encompass red
and infrared GaAs emitters and silicon detectors that are well matched
for a variety of applications.
Dptolsolators
Motorola's "Global" 6-Pin Dual In-line Package (DIP) devices use
infrared emitting diodes that are optically coupled to a wide selection of
output (Transistor. Darlington, Triac, and Schmitt trigger) silicon
detectors. These devices are guaranteed to provide at least 7500 volts
of isolation between the input and output and are 100% VISO tested.
The entire line of Motorola 6-Pin DIP packages are recognized by all
major safety regulatories including UL and VDE. This extensive line of
reguletory approvals attest to their suitability for use under the most
stringent conditions. Motorola also offers a line ofSOIC-8 small outline,
surface mount devices that are UL approved and ideally suited for high
density applications.
Emitters and Detectors
Motorola emitters (LEDs) are manufactured to operate at wavelengths of 660, 850 or 940 nanometers (nm).
The 940 nm emitters are least expensive. They are well suited for
applications where close proximity to the detector tolerates a moderate
mismatch in spectral response in exchange for lower cost.
The 850 nm emitters have peak emission which almost exactly
matches thatofsilicondetectors. Theseemittersare widely used where
effiCiency and high speeds are of primary importance.
The 660 nm are visible and well matched to the characteristics of
low-cost plastic fiber and find wide use in fiber optiCS communications.
Coupled with a line ofsilicon photodetectors with outputs tailored for
specific applications (diodes, transistors, Darlingtons, triacs and
Schmitt triggers), Motorola's product line offers the engineer a choice
of components that can result in optimum system design.
Fiber OptiCS
Low cost components offer 10 MHz bandwidth for short distance
communications. High performance emitter detector components
provide transmission up to several kilometers with bandwidths in
excess of 100 MHz.
Optointerrupters
Infrared LEDs facing photodetectors in a wide range of slotted
packages permit custom design of systems to virtually any physical
requirement. A wide selection of outputs (transistor. Darlington, logic,
etc.) offers an excellent match for a variety of applications.
Optoisolators .............................. , 3-2
6-Pin Dual In-line Package. . . . . . . . . . . . . . . . . . .. 3-2
6-Pin Surface Mount . . . . . . . . . . . . . . . . . . . . . . . .. 3-6
Small Outline - Surface Mount ............... 3-9
POWER OPTO Isolators .................... 3-10
Emitters/Detectors ......................... 3-11
Optointerrupters ........................... 3-12
Fiber Optic Components ................... 3-13
Optoelectronic Chips ....................... 3-16
Chips
A number of LED and detector functions are available In chip form
for hybrid system designs.
3-1
Optoisolators
6-Pin Dual In-line Package
Im&
Transistor
2
5
3
NC
4
1~&
:~:
:g:
CASE 730A..Q4
Resistor Darlington
Transistor
l~C l~C
3LJm4
2
~
6
5
2
~
6
5
3
NC
4
3
NC
4
1~6
••
2
3
5
NC
4
1~6
2
3
Style 1
Schmitt Triggers
AClnput
Transistor Output
Darlington
5
NC
4
Style 3
Random Phase
Triac Driver
AC Input
Resistor-Darlington
Output
Zero Crossing
Triac Driver
::n:It:
3~4
1~6
2
5
3
4
lEi&
2
3
5
NC
4
Zero Crossing
StyleS
Style 6
An optoisolator consists of a gallium arsenide infrared
emitting diode, IRED, optically coupled to a monolithic silicon
photodetector in a wide array of standard devices and
encourages the use of special designs and selections for
special applications. All Motorola optoisolators have VISO
rating of 7500 Vac(pkl, exceeding all other industry standard
ratings.
Motorola offers global regulatory approvals, including UL,
NEMKO, BABT, SETI, SEMKO, DEMKO and CSA. VDE(1)
approved per standard 088418.87, with additional approvals to
DIN IEC950 and IEC380NDE 0806, IEC435NDE 0805,
IEC65NDE 0860, VDE 110b, also covering all other
standards with equal or less stringent requirements, including
IEC204NDE 0113, VDE 0160, VDE 0832, VDE 0833.
CirculI
~
CASE
730A..Q4
StyleS
@
ForS
(F) CASE 730F..Q4
Sulfaca-lllountable
gull-wlng iow-prolile option
(S) CASE 730C-04
Surface-mountable
gull-wlng option
~
T
(T) CASE 730D-05
Wldt-spsced (OAOO,)
lead form option
Optoisolator
Lead Form Options
All Motorola 6-pin, dual in-line optoisolators are
available in either a surface-mountable, gull-wing lead
form or a wide-spaced 0.400" lead form, which is used to
satiSfy 8 mm pc board spacing requirements.
(1) VOE 088418.87 testing is an option; the suffix "yo must be
added to the standard part number Joee page 14-2).
• Attach "F" to any Motorola 6-pin, dual in-line part
number for low-profile, surface-mountable, gull-wing
lead form.
• Attach "S" to any Motorola 6-pin, dual inline part
number for surface-mountable, gull-wing lead form.
• Attacn ''T' to any Motorola 6-pin, dual in-line part
number for wide-spaced 0.400" lead form.
3-2
Optoisolators
6-Pin Dual In-line Package (continued)
Table 1. Transistor Output
Pinout· 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-Base (Style 1)
Current Transfer
Ralio(CTR)
%
Device
TIL112
TIL111
4N27
4N28
4N38,A
H11A4
4N25,A
4N26
H11A2
H11A3
H11A520
H11AV3
MCT2
MCT2E
TIL116
H11A5
CNX35
CNX36
CNX83
CNY17-1
MCT271
MOC8100
H11A1
H11A550
H11AV2
TIL117
TIL126
SL5501
CNY17-2
MCT275
MCT272
4N35
4N36
4N37
H11A5100
CNY17-3
SL5500
H11AV1
MCT273
MCT274
Min
2
8
10
10
10
10
20
20
20
20
20
20
20
20
20
30
40-160
80-200
40
40-80
45-90
50
50
50
50
50
50
45-250
63-125
70-210
75-150
100
100
100
100
100-200
50-300
100-300
125-250
225-400
@
IF
mA
10
16
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
VCE
Volls
5
0.4
10
10
10
10
10
10
10
10
10
10
10
10
10
10
0.4
0.4
0,4
5
10
5
10
10
10
10
10
0.4
5
10
10
10
10
10
10
5
0.4
10
10
10
trllf or ton '/toff'
Typ
VCE(sal)
VOIIS@ IF
Max mA
0.5
0.4
0.5
0.5
1
0.4
0.5
0.5
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.5
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.3
0.3
0.3
0.4
0.4
0.4
0.4
0.4
0.4
50
16
50
50
20
10
50
50
10
10
20
20
16
16
15
10
10
10
10
10
16
1
10
20
20
10
10
20
10
16
16
10
10
10
20
10
50
20
16
16
CASE 730A-04
IC
mA
2
2
2
2
4
0.5
2
2
0.5
0.5
2
2
2
2
2.2
0.5
2
4
4
2.5
2
0.1
0.5
2
2
0.5
1
2
2.5
2
2
0.5
0.5
0.5
2
2.5
10
2
2
2
J.ls
@ IC
mA
2/2
5/5
1.2/1.3
1.211.3
1.612.2
1.211.3
1.211.3
1.211.3
1.211.3
1.211.3
5'15"
5'14'
1.211.3
1.211.3
515
1.211.3
313'
816'
313"
1.612.3"
4.9'14.5'
3.815.6
1.211.3
5'15'
5'14'
515
212
20'1501.612.3
4.5'13.5'
6'15.5'
3.214.7
3.214.7
3.214.7
5'15'
1.612.3
20'1505'14'
7.6'16.6'
9.1'17.9'
2
2
10
10
10
2
10
10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
VCC
Volls
RL
10
10
10
10
10
10
10
10
10
10
10
10
5
10
10
10
5
5
5
5
5
10
10
10
10
10
10
5
5
5
5
10
10
10
10
5
5
10
5
5
100
100
100
100
100
100
100
100
100
100
100
100
2k
100
100
100
100
100
100
75
100
100
100
100
100
100
100
1k
75
100
100
100
100
100
100
75
1k
100
100
100
10
10
10
10
10
5
10
10
100
100
100
100
100
100
100
100
Q
IF
mA
15
10
16
10
10
16
V(BR)CEO
VF
Volls
Min
VOIIS@ IF
Max
mA
20
30
30
30
80
30
30
30
30
30
30
70
30
30
30
30
30
30
50
70
30
30
30
30
70
30
30
30
70
80
30
30
30
30
30
70
30
70
30
30
1.5
1.4
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.7
1.5
1.5
1.5
1.65
1.5
1.4
1.5
1.5
1.5
1.4
1,4
1.3
1.65
1.5
1.5
1.5
1.5
1.5
1.5
1.65
1.3
1.5
1.5
1.5
10
16
10
10
10
10
10
10
10
10
10
10
20
20
60
10
10
10
10
60
20
1
10
10
10
16
10
20
60
20
20
10
10
10
10
60
20
10
20
20
30
30
30
30
30
50
30
30
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
10
10
10
10
10
10
10
10
Table 2. Transistor Output with No Base Connection
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-EmiUer, 5-Collector, 6-Base (Style 3)
MOC8101
MOC8102
MOC8103
MOC8104
MOC8111
CNX82
MOC8112
MOC8113
50-80
73-117
108-173
160-256
20
40
50
100
10
10
10
10
10
10
10
10
10
10
10
10
10
0.4
10
10
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
5
5
5
5
10
10
10
10
0.5
0.5
0.5
0.5
0.5
4
0.5
0.5
Devices listed in bold, italic are Motorola preferred devices.
3-3
3.214.7
3.214.7
3.214.7
3.214.7
3.214.7
3133.214.7
3.214.7
2
2
2
2
2
2
2
2
Optoisolators
6-Pin Dual In-line Package (continued)
CASE 730A-Il4
Table 3. AC Input - Transistor Output
Pinout: 1-LED 1 Anode/LED 2 Cathode, 2-LED 1 Cathode/LED 2 Anode, 3-N.C., 4-Emitter, S-Collector, 6-Base (Style 8)
Current Transfer
Ratio (CTR)
%
Device
H11AA1
H11AA2
H11AA3
H11AA4
Min
IF
mA
20
10
50
100
±10
±10
±10
±10
@
VCE
Volts
lon'/tott'
Typ
tr/tf or
VCE(sat)
Volts@ IF
Max mA
0.4
0.4
0.4
0.4
10
10
10
10
±10
±10
±10
±10
IC
mA
I1S
@ IC
mA
VCC
Volts
RL
Q
IF
mA
0.5
0.5
0.5
0.5
V(BR)CEO
VF
Volts
Min
VOlts@ IF
Max mA
30
30
30
30
1.5
1.8
1.5
1.5
±10
±10
±10
±10
Table 4. AC Input - Resistor Darlington Output
Pinout: 1-LED 1 Anode/LED 2 Cathode, 2-LED 1 Cathode/LED 2 Anode, 3-N.C., 4-Emitter, S-Collector, 6-Base (Style 8)
1MOC8060
1 1000
1 ±10 1 10
1 2
1 ±10 1100 1
50
1.5 1 ±10 1
30
30
30
55
30
5
25
30
30
30
30
25
55
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
10
10
10
20
20
20
10
20
10
10
10
10
10
10
10
10
10
30
30
80
50
80
50
1.5
1.5
2
2
2
2
10
10
10
10
10
10
Table 5. Darlington Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, S-Collector, 6-Base (Style 1)
4N31
4N29,A
4N30
H11B255
MCA230
MCA255
H11B2
MCA231
TIL113
4N32,A
4N33
H11B1
MOC8080
50
100
100
100
100
100
200
200
300
500
500
500
500
10
10
10
10
10
10
1
1
10
10
10
1
10
10
10
10
5
5
5
5
1
1.25
10
10
5
5
1.2
1
1
1
1
1
1
1.2
1
1
1
1
1
8
8
8
50
50
50
1
10
50
8
8
1
1
2
0.6*/17*
2
0.6*/17*
2
0.6*/17*
50 125'/100'
10/35
50
50
10/35
1
112
50
80
125
300
2
0.6*/45*
0.6*/45*
2
1
1/2
1
1/2
50
50
50
10
10
10
125
50
50
10
10
10
10
10
10
10
10
10
15
10
10
10
10
200
200
200
100
100
100
100
100
100
50
50
200
200
100
100
55
Table 6. Darlington Output wHh No Base Connection
Pinout: 1-Anode, 2-cathode, 3-N.C" 4-Emitter, 5-Collector, 6-N.C. (Style 3)
MOC119
TIL119
MOCB030
MOC8020
MOCB050
MOC8021
300
300
300
500
500
1000
10
10
10·
10
10
10
2
2
1.5
5
1.5
5
1
1
10
10
10
10
1/2
300
2.5
2.5
1/2
1/2
1/2
112
Table 7. Resistor Darlington Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emltter, 5-Collector, 6-Base (Style 1)
H11G1
H11G2
H11G3
Devices listed in bold, italic are Motorola preferred devices.
3-4
10
10
50
50
50
50
100
100
100
100
100
100
Optolsolators
6-Pin Dual In-line Package (continued)
Table 8. High Voltage Transistor Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Ernitter, 5-Collector, 6-Base (Style 1)
Current Transfer
Ratio (CTR)
Device
MOCB204
H11D1
Hl1D2
%
Min
20
20
20
IF
@
rnA
I
10
10
10
CASE 730A-114
trltf or Ion*/loft*
Typ
VCE(sat)
VCE
Volts
VOlts@ IF
Max rnA
IC
rnA
~
10
10
10
10
0.41
0.4
10
0.4
10
0.5
0.5
0.5
5*/5*
5*/5*
5*/5*
@
IC
rnA
VCC
Volts
RL
2
2
2
10
10
10
100
100
100
I
n
V(BR)CEO
VF
Volts
Min
VOlts@ IF
Max
rnA
400
300
300
1.51 10
1.5
10
1.5
10
IF
rnA
Table g. Triac Driver Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 40Main Terminal, 5-Substrate, 6-Main Terminal (Style 6)
Device
Peak Blocking
Voltage
Min
LED Trigger
Current-1FT
(VTM = 3 V)
rnA Max
250
250
250
250
400
400
400
400
250
250
250
400
400
400
SOO
600
SOO
800
800
800
30
15
10
5
30
15
10
5
15
10
5
15
10
5
15
10
5
15
10
5
MOC3009
MOC3010
MOC3011
MOC3012
MOC3020
MOC3021
MOC3022
MOC3023
MOC3031
MOC3032
MOC3033
MOC3041
MOC3042
MOCS043
MOC30S1
MOC30S2
MOC3063
MOC3081
MOC3082
MOC3083
Zero Crossing
Inhibit Voltage
(at rated 1FT)
Volts Max
Operating
Voltage
VacPk
-
dv/dt
V1~Typ
125
125
125
125
-
1251220
-
125/220
125/220
10
10
10
10
10
10
10
10
2000
2000
2000
2000
2000
2000
1500
1500
1500
1500
1500
1500
125/220
-
20
20
20
20
20
20
20
20
20
20
20
20
125
125
125
125/240
125/240
125/240
280
280
280
320
320
320
Table 10. Schmitt Trigger Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-0utput, 5-Ground, 6-Vcc (Style 5)
Device
H11L1
HllL2
MOCSOO7
MOC5008
MOC5009
Threshold
Current On
rnA Max
Threshold
Current Oft
rnA Min
1.S
10
. 1.S
4
10
0.3
0.3
0.3
0.3
0.3
IF(oftjllF(on)
Min
Max
0.5
0.5
0.5
0.5
0.5
0.9
0.9
0.9
0.9
0.9
Devices listed in bold, italic are Motorola preferred devices.
3-5
tro tf
vCC
Min
Max
~Typ
VISO
VacPk
3
3
3
3
3
15
15
15
15
15
0.1
0.1
0.1
0.1
0.1
7500
7500
7500
7500
7500
Optoisolators
6-Pin Surface Mount
Table 11. Transistor Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-Base (Style 1)
Current Transfer
Ratio (CTR)
"10
Device
TIL112S,F
TIL111S,F
4N27S,F
4N28S,F
4N38S,F
H11A4S,F
4N25S,F
4N25A5,F
4N265,F
H11A2S,F
H11A3S,F
H11A520S,F
H11AV3S,F
MCT2S,F
MCT2ES,F
TIL116S,F
H11A5S,F
CNX35S,F
CNX36S,F
CNX83S,F
CNY17-15,F
MCT271S,F
MOC8100S,F
H11A1S,F
H11A550S,F
H11AV2S,F
TIL117S,F
TIl126S,F
SL5501S,F
CNY17-25,F
MCT275S,F
MCT272S,F
4N355,F
4N36S,F
4N37S,F
H11A5100S,F
CNY17-35,F
SL5500S,F
Hl1AV15,F
MCT273S,F
MCT274S,F
Min
@
2
8
10
10
10
10
20
20
20
20
20
20
20
20
20
20
30
40-160
80-200
40
40-80
45-90
50
50
50
50
50
50
45-250
63-125
70-210
75-150
100
100
100
100
100-200
50-300
100-300
125-250
225-400
tr/tf or ton"/toft"
Typ
VCE(sat)
IF
rnA
VCE
Volts
10
16
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
0.4
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
0.4
0.4
0.4
5
10
5
10
10
10
10
10
0.4
5
10
10
10
10
10
10
5
0.4
10
10
10
VOlts@ IF
Max rnA
0.5
0.4
0.5
0.5
1
0.4
0.5
0.5
0.5
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.5
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.3
0.3
0.3
0.4
0.4
0.4
0.4
0.4
0.4
50
16
50
50
20
10
50
50
50
10
10
20
20
16
16
15
10
10
10
10
10
16
1
10
20
20
10
10
20
10
16
16
10
10
10
20
10
50
20
16
16
(S) CASE 730C·04
(F) CASE 730F-04
IC .
rnA
2
2
2
2
4
0.5
2
2
2
0.5
0.5
2
2
2
2
2.2
0.5
2
4
4
2.5
2
0.1
0.5
2
2
0.5
1
2
2.5
2
2
0.5
0.5
0.5
2
2.5
10
2
2
2
Devices listed in bold, italic are Motorola preferred devices.
3-6
~s
@
2/2
5/5
1.2/1.3
1.2/1.3
1.6/2.2
1.211.3
1.2/1.3
1.2/1.3
1.2/1.3
1.211.3
1.2/1.3
5'/5'
5'/4'
1.211.3
1.2/1.3
5/5
1.2/1.3
3/3'
8/6'
3/3'
1.6/2.3
4.9'/4.5'
3.8/5.6
1.211.3
5'/5'
5'/4'
5/5
212
20'/50'
1.6/2.3
4.5'/3.5'
6'/5.5'
3.2/4.7
3.214.7
3.214.7
5'/5'
1.6/2.3
20'/50'
5'/4'
7.6'/6.6'
9.1'17.9'
IC
rnA
VCC
Volts
RL
2
2
10
10
10
2
10
10
10
2
2
2
2
10
10
10
10
10
10
10
10
10
10
10
10
10
5
10
10
10
5
5
5
5
5
10
10
10
10
10
10
5
5
5
5
10
10
10
10
5
5
10
5
5
100
100
100
100
100
100
100
100
100
100
100
100
100
2k
100
100
100
100
100
100
75
100
100
100
100
100
100
100
1k
75
100
100
100
100
100
100
75
1k
100
100
100
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
n
IF
rnA
15
10
16
10
10
16
V(BR)CEO
Volts
Min
20
30
30
30
80
30
30
30
30
30
30
30
70
30
30
30
30
30
30
50
70
30
30
30
30
70
30
30
30
70
80
30
30
30
30
30
70
30
70
30
30
vF
Volls
IF
Max@ rnA
1.5
1.4
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.7
1.5
1.5
1.5
1.65
1.5
1.4
1.5
1.5
1.5
1.4
1.4
1.3
1.65
1.5
1.5
1.5
1.5
1.5
1.5
1.65
1.3
1.5
1.5
1.5
10
16
10
10
10
10
10
10
10
10
10
10
10
20
20
60
10
10
10
10
60
20
1
10
10
10
16
10
20
60
20
20
10
10
10
10
60
20
10
20
20
Optoisolators
6-Pin Surface Mount (continued)
(S) CASE 730C-04
(F) CASE 730F-04
Table 12. Transistor Output with No Base Connection
Pinout: l-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-N.C. (Style 3)
Device
MOCBI0IS,F
MOCBI02S,F
MOC8103S,F
MOC8104S,F
MOCB111S,F
CNX82S,F
MOC8112S,F
MOC8113S,F
Current Transfer
Ratio (CTR)
%
VCE
@ IF
Min
rnA Volts
50-80
73-117
108-173
160-256
20
40
50
100
10
10
10
10
10
10
10
10
10
10
10
10
10
0.4
10
10
trltf or t on * Itoff*
Typ
VCE(sat)
VOlts@ IF
Max rnA
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
5
5
5
5
10
10
10
10
IC
rnA
I's
0.5
0.5
0.5
0.5
0.5
4
0.5
0.5
3.214.7
3.2/4.7
3.2/4.7
3.2/4.7
3.2/4.7
3/3'
3.2/4.7
3.2/4.7
@
IC
rnA
VCC
Volts
RL
2
2
2
2
2
2
2
2
10
10
10
10
10
5
10
10
100
100
100
100
100
100
100
100
Q
IF
rnA
V(BR)CEO
Volts
Min
30
30
30
30
30
50
30
30
VF
Volts
IF
Max@ rnA
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
10
10
10
10
10
10
10
10
Table 13, AC Input - Transistor Output
Pinout: l-LED 1 Anode/LED 2 Cathode, 2-LED 1 Cathode/LED 2 Anode, 3-N,C., 4-Emitter, 5-Collector, 6-Base (Style 8)
Hl1AAIS,F
H11AA2S,F
H11AA3S,F
Hl1AA4S,F
20
10
50
100
±10
±10
±10
±10
10
10
10
10
0.4
0.4
0.4
0.4
±10
±10
±10
±10
0.5
0.5
0.5
0.5
30
30
30
30
1.5
1.8
1.5
1.5
±10
±10
±10
±10
Table 14. AC Input - Resistor Darlington Output
Pinout: 1-LED 1 Anode/LED 2 Cathode, 2-LED 1 Cathode/LED 2 Anode, 3-N.C., 4-Emitter, 5-Collector, 6-Base (Style 8)
1MOC8060S,F
1000
1 ±10 1 10
2
1 ±10 1100 1
50
1.5 1 ±10 1
5
30
30
30
55
30
55
25
30
30
30
30
25
55
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
10
10
10
20
20
20
10
20
10
10
10
10
10
10
10
10
10
30
30
80
50
80
50
1.5
1.5
2
2
2
2
10
10
10
10
10
10
Table 15. Darlington Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-Base (Style 1)
4N31S,F
4N29S,F
4N30S,F
H11B255S,F
MCA230S,F
MCA255S,F
H1182S,F
MCA231S,F
TIL113S,F
4N32S,F
4N33S,F
H1181S,F
MOC8080S,F
50
100
100
100
100
100
200
200
300
500
500
500
500
10
10
10
10
10
10
1
1
10
10
10
1
10
10
10
10
5
5
5
5
1
1.25
10
10
5
5
1.2
1
1
1
1
1
1
1.2
1
1
1
1
1
8
8
8
50
50
50
1
10
50
8
8
1
1
2
2
2
50
50
50
1
50
125
2
2
1
1
0.6'/17*
0.6*/17'
0.6'/17*
125'/100'
10/35
10/35
1/2
80
300
0.6'/45'
0.6'/45'
1/2
1/2
50
50
50
10
10
10
125
50
50
10
10
10
10
10
10
10
10
10
15
10
10
10
10
200
200
200
100
100
100
100
100
100
50
50
200
200
100
100
Table 16. Darlington Output with No Base Connection
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-N.C. (Style 3)
MOC119S,F
TIL119S,F
MOCB030S,F
MOC8020S,F
MOCB050S,F
MOC8021S,F
300
300
300
500
500
1000
10
10
10
10
10
10
2
2
1.5
5
1.5
5
1
1
10
10
10
10
1/2
300
1/2
1/2
1/2
1/2
2.5
2.5
10
10
50
50
50
50
100
100
100
100
100
100
For Surface Mountable standard leadform, Order "8" suffix devices; e.g., MOC3043S.
For low profile Surface Mountable leadform, Order "F" suffix devices; e.g., MOC5007F.
For 24 mm Tape and Reel, add R2 suffix to the 6-pin optoisolator part number; e.g., H11A1SR2. (See Tape and Reel Specifications Section for more information)
Devices listed in bold, italic are Motorola preferred devices.
3-7
Optolsolators
6-Pin Surface Mount (continued)
(5) CASE 730C..Q4
(F) CASE 730F..Q4
Table 17. Resistor Darlington Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4oEmltter, 5-Collector, 60Base (Style 1)
Device
H11G1S,F
H11G2S,F
H11G3S,F
Current Transfer .
Ratio (CTR)
%
VCE
@ IF
Min
rnA Volts
1000
1000
200
VCE(sat)
VOIts@ IF
Max rnA
IC
rnA
1 111
1
1.2
50
1
1
20
1
1
5
10
1 1
tr/tf or Ion*/toff*
Typ
RL
VCC
@ IC
n
Volts
rnA
I1S
IF
rnA
V(BR)CEO
Volts
Min
VF
Volts
IF
Max@ rnA
100
100
100
10
10
10
100
80
55
1.51 10
1.5
10
1.5
10
5
5
5
5*/100*1
5"/100"
5"/100"
Table 18. High Voltage Transistor Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Ernltter, 5-Collector, 6-Base (Style 1)
MOC8204S,F
H11D1S,F
H11D2S,F
Table 19. Triac Driver Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 40Main Terminal, 5-Substrate, 60Main Terminal (Style 6)
Device
LED Trigger
Current-1FT
(VTM =3V)
rnA Max
Peak Blocking
Voltage
Min
MOC3009S,F
250
250
250
250
400
400
400
400
250
250
250
400
400
400
600
600
600
MOC301OS,F
MOC3011S,F
MOC3012S,F
MOC3020S,F
M0C3021S,F
MOC3022S,F
M0C3023S,F
M0C3031S,F
MOC3032S,F
MOC3033S,F
MOC3041S,F
MOC3042S,F
MOC3043S,F
MOC3061S,F
MOC3062S,F
MOC3063S,F
MOC3081S,F
MOC3082S,F
MOC3083S,F
Zero Crossing
Inhibit Voltage
(at rated 1FT)
Volts Max
-
30
15
10
5
30
15
10
5
15
10
5
15
10
5
15
10
5
15
10
5
800
800
800
Operating
Voltage
VacPk
dv/dt
V/jis Typ
10
10
10
10
10
125
125
125
125
1251220
1251220
1251220
1251220
125
125
125
1251220
1251220
1251220
280
280
280
3201280
3201280
3201280
-
-
20
20
20
20
20
20
20
20
20
20
20
20
H)"
10
10
2000
2000
2000
2000
2000
2000
1500
1500
1500
1500
1500
1500
Table 20, Schmitt Trigger Output
Pinout: 1-Anode, 2-cathode, 3-N.C., 400utput, 5-Ground, 6-Vee (Style 5)
Device
H11L1S,F
H11L2S,F
M0C5007S,F
Threshold
Current On
rnA Max
Threshold
Current Off
rnA Min
Min
Max
Min
Max
t" tf
I1S Typ
VISO
VacPk
1.6
10
1.6
0.3
0.3
0.3
0.5
0.5
0.5
0.9
0.9
0.9
3
3
3
15
15
15
0.1
0.1
0.1
3535
3535
VCC
IF(ofI)/IF(on)
For Surface Mountable standard lsadform, Order OS" suffix davlceS; e.g., MOC3043S.
For low profile Surface Mountable leadiorm, Order"F" suffix devices; e.g., MOC5007F.
For 24 mm Tape and Reel, add R2 suffix to the 6ilin optoisolator pari number; e.g., Hll Al SR2. (See Tape and Reel Specifications Section for more information
Oeviceslisled in bold, italic are Motorola preferred devices.
3-8
Optoisolators
6-Pin Surface Mount (continued)
Table 20. Schmitt Trigger Output (continued)
Device
Threshold
CurranlOn
mAMax
Threshold
CurrenlOff
mAMin
Min
I
Max
Min
Max
1... 1,
I'sTyp
4
10
0,3
0.3
0,5
0.5
I
0,9
0.9
3
3
15
15
0.1
0.1
MOC5008S,F
MOC5009S,F
VCC
IF(off)/IF(on)
VISO
VacPk
For Surface Mountable standard leadform, Order "S" suffix devices; e.g., MOC3043S.
For low profile Surface Mountable leadform, Order "'P' suffix devices; e.g., MOC5007F.
For 24 mm Tape and Reel, add R2 suffix to the 6-pin optoisolator part number; e.g., H11A 1SR2. (See Tape and Reel Specifications Section for more information
Small Outline -
Surface Mount
CASE 846·01
SO-8 DEVICES
Table 21. Transistor Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-N.C., 5-Emitter, 6-Collector, 7-Base, 8-N.C. (Style 1)
Currenl Transfer Rallo
Device
Marking
%
Min
MOC205R1IR2
MOC206R1IR2
MOC207R1IR2
MOC211R1IR2
MOC212R1IR2
MOC213R1IR2
MOC215R1IR2
MOC216R1IR2
MOC217R1IR2
205
206
207
211
212
213
215
216
217
4Q--80
63-125
100-200
20
50
100
20
50
100
@ IF
mA
VCE
Volls
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
5
5
5
Irllf Typ
VCE(sal)
VOlts@ IF
Max
mA
IC
mA
I1S
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
2
2
2
2
2
2
0.1
0.1
0.1
1.6
1.6
1.6
3.2
3.2
3.2
3.2
3.2
3.2
10
10
10
10
10
10
1
1
1
@IC
mA
2
2
2
2
2
2
2
2
2
VF
VCC
Volls
RL
Q
V(BR)CEO
Volls
Min
10
10
10
10
10
10
10
10
10
100
100
100
100
100
100
100
100
100
70
70
70
30
30
30
30
30
30
Table 22. Darlington Output
Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-N.C., 5-Emitter, 6-Collector, 7-Base, S-N.C. (Style 1)
All devices are shipped in tape and reel format. (See Tape and Reel Specifications Section for more information.)
Devices listed in bold, italic are Motorola preferred devices.
3-9
VOlts@ IF
Max
mA
1.5
1.5
1.5
1.5
1.5
1.5
1.3
1.3
1.3
10
10
10
10
10
10
1
1
1
POWER OPTOTM Isolators
23
CASE 417-02
PLASTIC PACKAGE
Table 23. POWER OPTO Isolator 2 Amp Zero-Cross Triac Output
Pinout: (1,4,5,6,8 No Pin), 2 - LED Cathode, 3- LED Anode, 7-Main Terminal, 90Main Terminal)
Device
Peak Blocking
Voltage
(Volts)
Min
Led Trigger
Current HT
(VTM = 2 V) mA
Max
On State Voltage
VTM
(Rated 1FT
trM = 2 A) (Volts)
Max
Zero Crossing
Inhibit Voltage
(IF = Rated 1FT)
(Volts)
Max
Operating
Voltage
Vac rms (Volts)
dv/dt (static)
(VIN = 200 V)
(V/~)
Min
MOC2A4O-SIF
400
5
1-3
10
125
400
MOC2A4o-101F
400
10
1-3
10
125
400
MOC2A6O-5IF
600
5
1-3
10
125/220
400
MOC2A60-101F
600
10
1-3
10
125/220
400
No suffix =Style 2 (Standard Heat Tab), 'P' suffix =Style 1 (Flush Mount Heat Tab).
Emitters/Detectors
CASE 82-05
Metal
Power
Forward
Emission
Device
MLED91
MLED96
MLED97
MLEDS1
MLED930
~W
IF
1\'p@mA
2500
4000
2500
16000
650
Angle
Typ
50
100
100
100
100
Voltage
Peak
Emission
-gill
@ IF
Max mA
nm"fWJ
60'
60'
60'
60'
1.8
2.2
2
1.7
1.5
940
660
850
940
940
30'
50
60
100
100
50
CASE 209-01
Metal
rt
Table 24. Infrared Emitting Diodes
Output
rt
{f
Infrared Emitting Diodes
Motorola's infrared emitting diodes are made by the liquid
phase epitaxial process for long life and stability. They provide
high power output and quick response at 660 nm, 850 nm or
940 nm with low input drive current.
Case!
Style
{}
CASE 210-01
Flat Lens
Metal
422A-0111
422A-01/4
422A-01/4
2798-01/1
209-01/1
CASE 209-02
Convex Lens
Metal
Silicon Photodetectors
CASE 422-01
Plastic
A variety of silicon photodetectors are available, varying from
simple PIN diodes to complex, single chip 400 volt triac
drivers. They offer choices of viewing angle and size in either
economical plastic cases or rugged, hermetic metal cans.
They are spectrally matched for use with Motorola infrared
emitting diodes.
Table 25. PIN Photodiodes - Response Time
Light Current
@VR=20V,
H=smW/cm2
=1 ns Typ
CASE 422A-01
Plastic
Table 27_ Photodarlingtons
Dark Current
@VR=20V
nA(Max)
Casel
Style
209-02/1
MRD500
9
2
MRD510
2
2
210-01/1
MRD921
4
10
422A-01/1
Device
Light
Current
@VCC=5,
H=O.S
mW/cm2
mA(Typ)
MRD821
250
60
381-0111
MRD370
MRD360
10
20
MRD911
25
IlA
Device
Table 26. Phototransistors
Device
Light
Current
@VCC=20,
H=SmW/c
m2 mA
(Typ)
V(BR)CEO
Volts
(Min)
trltf
@VCC=20,
IL=1000 IlA
!lS (Typ)
MRD310
MRD300
MRD30S0
MRD3056
3.5
8
0.1 Min
2 Min
50
50
30
30
212.5
212.5
212.5
212.5
trltf
@VCc=SV
!lS (Typ)
Casel
Style
40
40
15/40
82-0511
60
1251150
(Min)
15/65
422A-01/2
Casel
Style
82-05/1
Device
HFT
mW~
Max
IT(RMS)
mA
Max
VDRM
Volts Peak
Min
IDRM
nA
Typ
Casel
Style
MRD3010
5
100
250
10
82-0513
Table 29_ Photo Schmitt Triggers
Threshold
Current
mA
Ionfloff
0.5
V(BR)CEO
Volts
Table 28. Photo Triac Drivers
ON
Max
OFF
Min
MRD950
20
MRD5009
20
@VCC=SV
MRD901
CASE 381-01
Plastic
30
10/60
Device
422A-01/2
All case 422 and 422A devices are available in Tape and Reel format. Add
ALAE suffix to the part number; e.g. MAD901 ALAE. (See Tape and Aeel
Specifications Section for more information)
Devices listed in bold, italic are Motorola preferred devices.
3-11
!E!!®
IF(on)
Typ
VCC
Volts
trltf
I'sTyp
Casel
Style
1
0.75
3-15
0.1
422-01/3
1
0.75
3-15
0.1
82-05/1
Optointerrupters
An Optointerrupter consists of an infrared emitting diode
facing a photodetector in a molded plastic housing. A slot in
the housing between the emitter and detector provides a
means for interrupting the signal transmission.
Motorola Optointerrupters are available in a wide selection of
detector functions and housings to meet the designer's
system requirements.
CASE 354A-113
CASE 354-03
Motorola also offers custom designed packaging in a broad
range of output functions, including those shown below, and
more. Contact your nearest Motorola Sales Office or call us at
602-BIG-OPTO.
CASE 354C-113
CASE 354J-01
CASE 792-01
Table 30. Transistor
Current Transfer Ratio
%Mln
IF
mA
VCE
Volts
5
10
20
5
10
20
5
10
5
10
5
20
20
20
20
20
20
20
20
20
20
20
5
5
5
5
5
5
10
10
10
10
10
@
Device
H21Al
H21A2
H21A3
H22Al
H22A2
H22A3
MOC70T1
MOC70T2
MOC70Pl
MOC70P2
MOC70Vl
Table 31. Dual Channel -
I
MOC70Wl
0.5
VF
VCE(sat)
Volts
IF
@
Max
mA
IC
mA
Volts
@ IF
mA
Max
Output Voltage Range
Volts
Max
Package
Case/Style
1.7
1.7
1.7
1.7
1.7
1.7
1.8
1.8
1.8
1.8
1.8
60
60
60
60
60
60
50
50
50
50
50
30
20
30
20
30
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
30
354A-03l1
354A-03l1
354A-03l1
354·0311
354-0311
354-0311
354A-03l1
354A-03l1
354J-01l1
354J-Ol/1
354G-02!1
20
0.1
1.8
50
30
792-01/2
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
0.4
30
20
20
30
20
20
0.4
30
30
30
30
30
30
30
30
30
30
Transistor
20
10
Table 32. Darlington
30
30
Table 33. Logic
VF
Device
MOC75T1
LED Trigger Current
mA
Hysteresis Ratio
IF(off)/IF(on)
30
0.75
l(on)/l(off)
I1S
1.2
Devices listed in bold, italic are Motorola preferred devices.
3-12
Volts @
Max
1.6
I
IF.
mA
20
Output Voltage Range
Volts
Package
Case/Style
3-15
354C-03l1
Fiber Optic Components
Emitters
Motorola offers two families of emitters for fiber optic systems.
CASE 210A-Ol/1
TO-206AC
(TO-52)
CASE 209-11211
• "High Performance" family in hermetic Case 210 for
systems requiring greater than 100 MHz analog
bandwidth over several kilometers. An additional family in
Case 210 provides electrical performance (120 MHz)
over moderate distances (500 meters) and is specified for
use with hard clad silica fiber (Ensign-Bickford HCP M0200T-06)
• "POF" family in unique Plastic Optic Fiber package is
designed for applications requiring low cost, speeds up to
10 MHz and distances under 200 meters. (The POF
package serves as its own connector.) It is used with
inexpensive 1000 micron plastic core fiber (Eska
SH4001).
CASE 2100-01/1
(TO-52 Type)
Detectors
Detectors are available with a variety of output configurations
that greatly affect Bandwidth and Responsivity.
All Motorola fiber optic components, except the POF family,
are designed for use with 100 micron (or larger) core glass
fiber and fit directly into the following industry standard
connector systems. AMP #228756-1, AM PHENOL #905138-5001, OFTI #PCROO1.
POF
CASE 3638-01/1
(2-lead)
POF
CASE 363C-01/1
(3-lesd)
Table 34. Emitters
Total Power
Oulpul
Device
MFOE71
MFOE76
Response Time
A.
IFmA
Ir
ns
Typ
If
ns
Typ
nm
Typ
3.5
3.5
100
100
25
200
25
150
820
660
mW
Typ
@
Case/Slyle
3638-01/1
MFOE200
3
100
250
250
940
209-0211
MFOEll00
MFOEll0l
MFOEll02
2.6
4
5
100
100
100
15
15
15
16
16
16
850
850
850
210A-Ol/1
MFOE1200
MFOE1201
MFOE1202
MFOE1203
0.9
1.5
2.4
2.8
100
100
100
100
5
2.8
2.8
2.8
5
3.5
3.5
3.5
850
850
850
850
210A-Ol/1
MFOEI300
MFOEI400
5
2.5
100
100
15
2.8
16
3.5
850
850
210A-Ol/1
Devices listed in bold, italic are Motorola preferred devices.
3-13
Fiber Optic Components: Detectors
(continued)
Table 35. Detectors
Response 11me
1'8 Typ
.
aWE
Responslvlty
IJA/IlW
Device
MHz
Typ
Ion
I(
loff'
If
Pholo PIN Diodes
MFODll00
MFOD71
350
70
0.35
0.2
0.5 ns
l' ns
Phototransistors
MFOD72
6 kHz
125
Photodarlingtons
MFOD73
2 kHz
1500
10
35
mVlIlW
35
6
Detector Preamps
MFOD2404
MFOD2405
I
~aR)
oilS
Min
Case/Style
0.15 ns
l' ns
50
100
210A·Ol/1
3636-01/3
10'
60'
30
3636-01/2
125'
150'
60
3636·0112
0.035
0.010
VCCRange
4-6
4-6
2100-01/1
0.035
0.010
Devices listed in bold, italic are Motorola preferred devices.
3-14
Fiber Optic Components (continued)
ACT Align Series
Receptacle Mounted
Fiber Optic Transmitter
and Receiver Components
Motorola ACT Align Fiber Optic Components eliminate the
time consuming and often performance robbing process of
aligning fiber optic components within commercial housings.
Utilizing advanced techniques Motorola can install any
Motorola fiber optic component into the connector of your
choice and guarantee the listed performance characteristics.
Guaranteed Performance
Cost Effective Installation
Improved Coupling Efficiency
lowers Connector Loss
High Launched Power
Industry Standard Connectors
Designed for 100 Micron Core Fibers (62.5 and 50 Micron
Core Fibers Available)
• MFOE130011400 Designed for use with 200 Micron Core
Hard Clad Silica Fiber (Ensign-Bickford
HCP-M0200T-06)
• Connectors Designed for Board or Panel Mounting
• If you desire another connector type, or are using a fiber
core diameter other than stated, please contact us at
602-BIG-OPTO
CASE 364A-Ol
Low Profile SMA
CASE 36«11
Low Profile SMA
•
•
•
•
•
•
•
Ordering Information
CASE 364B-ol
Low Profile ST®
CASE 364C-01
Low Profile ST®
To order Fiber Optic Components simply add the connector
suffix to the Motorola base device designation. For example:
to order an MFOE1201 fiber optic emitter in an SMA low profile
connector order part number MFOE1201SMA.
Table 36. Emitters
Table 37. Detectors
P_erLaunched
Device
IlW
Min
Max
MFOE200
Response
Time
60
120
180
MFOE1200
MFOE1201
MFOE1202
MFOE1203
60
40
75
135
MFOEI300
MFOEI400
1000
800
240
360
80
150
270
-
)"
Ir
ns
Typ
If
ns
Typ
100
100
100
15
15
15
16
16
16
850
850
850
100
100
100
100
5
2.8
2.8
2.8
5
3.5
3.5
3.5
850
850
850
850
100
100
15
2.8
16
3.5
850
850
IFmA
100
MFOEll00
MFOEll0l
MFOEll02
Response Time
nm
Typ
Device
BWE
Responsivlly
MHz
IlA/IlW
Typ
Photo Pin Diodes
940
IMFODll00 I 350 I
0.35
J!S Typ
Ion
Ir
Iloff
If
I0.5 ns I0.5 ns I
V(BR)
Volta
Min
50
Detector Preamps
VCC
Range
mV/llW
MFOD2404
MFOD2405
Devices listed in bold, italic are Motorola preferred devices.
3-15
10
35
35
6
0.035
0.01
0.035
0.01
4-6
4-6
Optoelectronic
Chips
Electrical Specifications and Ordering Information
• All dice have Aluminum front metallization (minimum
10000 A) and Gold back metal (minimum 15000 A).
• All wafers are .008 to .010 inch thick
• All wafers are unsawn and shipped in Anti-static
protective containers
• Minimum order quantity is one whole wafer, see "Good
Die Per Wafer" column for estimated die quantity
• All shipments in whole wafer increments
Motorola offers Optoelectronic Chips for use in hybrid
assembly and other customer applications. These chips are
the same high quality,high performance Light Emitting Diodes
and Detectors utilized in Motorola Optoisolators and Discrete
components.
Table 38. LED
Chip
Part
Number
Ole
Geometry
Reference #
Parameter
Symbol
Min
Typ
Max
Units
Estimated
Good Chip
Per Wafer
1
Peak Wavelength
(IF=50mA)
Ap
-
940
-
nm
10450
Po
2
-
-
mW
MLEDC1000WP
Total Power Out
(IF=50 mAl
MFOEC1200WP
FiberOptie
2
1
Forward Voltage
(IF=50 rnA)
VF
-
-
1.5
V
Peak Wavelength
(IF = 100 mAde)
Ap
-
850
-
nm
Total Power Out
(IF= 100 mAl
Po
1.5
-
-
mW
Forward Voltage
(IF= 1oomA)
VF
1
-
2.5
V
Responsivily
(VR = 20 V, A= 850 nm)
R
0.3
0.4
-
JJA/JlW
OarkCurrent
(VR = 20 V, H = 0)
10
-
-
10
nA
Responsivily
(VR = 5 V,A= 850 nm,P = 10 JlW)
R
0.3
0.4
-
JJA/JlW
Oark Current
(VR = 5 V, H = 0, RL = 1 Mohm)
10
-
-
1
nA
Light Current
(VCE = 5 V, H = 5 mW/em2)
IL
0.8
-
22
mA
Collector-Emitter
Breakdown Voltage
(ICE = 100 JJA)
V(BR)CEO
40
-
-
Light Current
(VCE = 5 V, H = 1 mW/em2 )
IL
0.8
-
20
mA
Collector-Emitter
Breakdown Voltage
(ICE= 1 rnA)
V(BR)CEO
45
-
-
V
1470
Table 39. Pin Diode
MRDC100WP
MFOOC11ooWP
FiberOptie
3
4
9860
9860
Table 40. TranSistor
MRDC200WP
5
11600
V
Table 41. Darlington
MROC400WP
6
Devices listed in bold, italic are Motorola preferred devices.
3-16
14600
Optoelectronic Chips
(continued)
Table 42 Triac Driver
Chip
Part
Number
MRDCBOOWP
Random Phase
MRDC600WP
Zero Crossing
Reference #
Parameter
Symbol
Typ
Max
Units
Estimated
Good Chip
Per Wafer
7
Trigger Current
().= 940 nm, VTM=3V,
RL= 150 ohm)
HFT
-
5
10
mW/cm2
5444
On-State RMS Current
(Full Cycle 50-60 Hz)
IT(RMS)
-
-
100
rnA
Off-State Output
Terminal Voltage
VORM
-
-
400
V
Peak Blocking Current
(VORM = 400 V)
IORM
-
10
100
nA
Trigger Current
(A= 940 nm, VTM = 3 V,
RL= 150 ohm)
HFT
0
5
10
mW/cm2
Peak Repetitive Current
(PW = 100 J.lS, 120 pps)
IT
-
-
300
rnA
Off-State Output
Terminal Voltage
'VORM
-
-
600
V
Peak Blocking Current
(VORM = 400 V)
IORM
-
60
500
nA
Inhibit Voltage
(H = 20 mW/cm2 , MT1-MT2;
voltage above which
device will not trigger
VIH
-
10
20
V
Ole
Geometry
8
Min
4180
Devices are available In sawn wafer format by substituting the WP suffiX with a CP suffiX; e.g. use MRDC600CP to order MRDC600 In sawn wafer format.
Devices listed in bold, italic are Motorola preferred devices.
3-17
Optoelectronic Chips (continued)
Geometries, Chip Size, Bond Pad Size
1
2
Chip Size: 15x 15 mils/O.4x 0.4 mm
Bond Pad Size:
Anode 4x4mils/O.l xO.l mm
Cathode =15 x 15 m~s/O.4.x 0.4 mm
4
3
5
Chip Size: 30 x 30 milsto.76 x 0.76 mm
Bond Pad Size:
Anode 4.0 mils dia.to.l mm dia.
Calhode 30 x 30 mils/O.76 x 0.76 mm
Chip Size: 30 x 30 m~s/0.76 x 0.76 mm
Bond Pad Size:
Anode 4.5x4.5 m~s/O.ll xO.ll mm
Calhode 30 x 30 mils/0.76 x 0.76 mm
Chip Size: 24 x 24 mils/O.6 x 0.6 mm
Bond Pad Size:
Anode 24 x 24 m~s/O.6 x 0.6 mm
Calhode 3.5 mils dia.to.09 mm dia.
6
Chip Size: 25 x 25 miIs/O.64 x 0.64 mm
Bond Pad Size:
Emitter
.3.5x3.5m~s/O.09xO.09mm
Base
.3.5 x3.5 m~s/O.09 x0.09 mm
Chip Size: 27 x 27 mils/O.69 x 0.69 mm
Bond Pad Size:
Emitter
.4.0 x 4.0 mils/O.l x 0.1 mm
Baser .4.0 mils dia.to.l mm dia.
7
A
B
C
E
G
K
Chip Size: 40 x 40 m~s/1.0 x 1.0 mm
Bond Pad Size:
MT - .14.0x5.0mils/O.l xO.13 mm
MT - .24.0x5.0mils/O.l xO.13mm
Chip Size: 45 x45 mils/1.14x 1.14 mm
Bond Pad Size:
MT
.14.6 mils dia./0.12 mm dia.
MT - .24.6 m~s dia./0.12 mm dia.
Front Metallization Thickness - a minimum of 10000 A
Back Metallization Thickness - a minimum of 15000 A
3-18
=
=
=
=
=
=
Anode
Base
Collector
Emitter
Gate
Calhode
Section Four
Optoisolators/
Optocouplers
4N25 Series. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-3
4N29 Series ...... .......................... 4-7
4N35 Series. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-11
4N38 ....................................... 4-15
CNY17-1 Series ............................ 4-19
H11A1 Series ................... ........... 4-23
H11AA1 Series ............................ 4-27
H11AV1 Series .............. ............... 4-30
H11 B1 Series . ............................. 4-34
H11D1 Series .............................. 4-38
H11G1 Series .............................. 4-41
H11L1Series .............................. 4-44
MCT2 ...................................... 4-47
MOC119 ................................... 4-51
MOC3009 Series . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-55
MOC3020 Series . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-59
MOC3031 Series . .......................... 4-63
MOC3041 Series ........................... 4-67
MOC3061 Series ........................... 4-71
MOC3081 Series . .......................... 4-75
MOC5007 Series ........................... 4-79
MOC8020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-82
MOC8030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-86
MOC8060 ...... . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-90
MOC8080 .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-94
MOC8100 ...... . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4-98
MOC8101 Series ............... ............ 4-102
MOC8111 Series ............... ............ 4-105
MOC8204 Series ........................... 4-109
4-1
GLOBAL OPTOISOLATORS
There ;s no need to worry about meeting the broad range of
requirements imposed throughout the world. With
Motorola optoisolators, your marketplace is indeed global.
Motorola 6-PIN DIP Optoisolators Feature:
• "Global" Safety Regulatory Approvals: VDE(1), UL, CSA, SETI, SEMKO, DEMKO, NEMKO,
AUSTEL and BABT
• The Industry's Highest Input-Output Voltage Isolation, Guaranteed and 100% tested Peak.
7500 Vac
• VDE approved per standard 0884/8.87(1) (Certificate number 62054), with additional approval to
DIN IEC950NDE0806 & VDFE0805, IEC65NDE0860, VDE110b, covering all other standards with
equal or less stringent requirements, including IEC204NDE0113, VDE0160, VDE0832, VDE0833.
• Specialleadform available to satisfy VDE0884/8.87 requirement for 8 mm minimum creepage
distance between input and output solder pads (add suffix ''T'' to part number). VDE 0884 testing is
an option.
• Surface mount leadforms are available for all 6-PIN DIP devices. To obtain standard profile "S" or
low profile "P' stand off heights simply add the suffix to the end of the part number (ie. MOC8104S
or MOC8104F).
• Tape and Reel option available for both "S" and "F" Surface Mount leadform options (1,000 pieces
per reel) add the suffix "R2" (ie. MOC8104FR2).
• Available in a wide variety of output types Cross/Random Phase Triac Drivers.
Transistor, Darlington, Schmitt Trigger, and Zero
(1) VDE 0884 testing is an option; the suffix letter "V" must be added to the part number.
4-2
6·Pin DIP Optoisolators
Transistor Output
[CTR
The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared
emitting diode opticaliy coupled to a monolithic silicon phototransistor detector.
• Most Economical Optoisolator
• Meets or Exceeds all JEDEC Registered Specifications
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of
different potentials and impedances
4N25*
4N25A*
4N26*
=
4N27
4N28
=
20% Min)
[eTR 10% Min)
"'Motorola Preferred Devices
STYLE 1 PLASTIC
~
• I/O Interfacing
• Solid State Relays
STANDARD THRU HOLE
CASE 730A-04
MAXIMUM RATINGS (TA = 25'C unless otherwise noted)
I
Rating
I Symbol
Value
Unit
3
Volts
INPUT LED
Reverse Voltage
VR
Forward Current - Continuous
IF
60
mA
LED Power Dissipation @ TA = 25'C
with Negligible Power in Output Detector
Derate above 25'C
Po
120
mW
1.41
mW/'C
30
Volts
~
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
~
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCEO
Emitter-Collector Voltage
VECO
7
Volts
VCBO
70
Volts
IC
150
mA
Po
150
mW
1.76
mW/,C
Collector-Base Voltage
Collector Current -
Continuous
Detector Power Dissipation @ TA = 25'C
with Negligible Power in Input LED
Derate above 25'C
Total Device Power Dissipation @ TA = 25'C
Derate above 25'C
Ambient Operating Temperature Range (2)
Storage Temperature Range
Soldering Temperature (10 sec, 1/16" from case)
~
CASE 730F-04
(LOW PROFILE)
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ae Voltage, 60 Hz, 1 sec Duration)
"S"rF" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
VISO
7500
Vae
Po
250
2.94
mW
mW/,C
'c
'c
'c
TA
-55 to +100
Tstg
-55 to +150
TL
260
(1) Isolation surge voltage IS an mternal device dlelectnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
SCHEMATIC
'~G'
2"
5
3D--
4
(2) Refer to Quality and Reliability Section for test information.
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITIER
5. COLLECTOR
6. BASE
4-3
..!
4N25,4N25A,4N26,4N27,4N28
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwi.se noted)
I
I
Characteristic
Min
Symbol
Typ
Max
Unit
1.15
1.3
1.05
1.5
Volts
-
100
pA
18
-
pF
1
1
50
100
nA
pA
INPUT LED
Forward Voltage (IF = lamA)
TA = 25"C
TA = -55"C
TA = 10O"C
Reverse Leakage Current (VR = 3 V)
Capacitance (V = a
v. f
-
VF
IR
= 1 MHz)
CJ
-
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
(VCE = 10 V. TA = 25"C
4N25.25A,26.27
4N28
-
ICED
-
ICED
-
1
-
ICBO
-
0.2
-
Collector-Emitter Breakdown Voltage (lC = 1 mAl
V(BR)CEO
30
45
Collector-Base Breakdown Voltage (lC = 100 pAl
V(BR)CBO
70
100
Emitter-Collector Breakdown Voltage (IE = 100 pAl
V(BR)ECO
7
7.8
DC Current Gain (lC = 2 mAo VCE = 5 V)
hFE
-
500
-
Collector-Emitter Capacitance (f = 1 MHz. VCE = 0)
CCE
7
-
Collector-Base Capacitance (f = 1 MHz. VCB = 0)
CCB
Emitter-Base Capacitance (f = 1 MHz. VEB = 0)
GEB.
All Devices
(VCE = 10 V. TA = 100"C)
Collector-Base Dark Current (VeB = 10 V)
-
19
2
1
7
5
9
-
nA
Volts
Volts
Volts
pF
-
pF
pF
COUPLED
Output Collector Current (IF = 10 mAo VCE = 10 V)
IC
4N25.25A.26
4N27.28
VCE(sat)
-
0.15
Turn-On Time (IF = 10 mAo VCC = 10 V. RL = 100 0)
ton
-
2.8
Turn-Off Time (IF = 10 mAo VCC = 10 V. RL = 100 0)
toff
-
4.5
Rise Time (IF = 10 mAo VCC = 10 V. RL = 100 (l)
tr
1.2
Fall Time (IF = 10 mAo VCC = 10 V. RL = 100 0)
tf
-
Collector-Emitter Saturation Voltage (lC = 2 mAo IF = 50 mAl
Isolation Voltage (f = 60 Hz. t = 1 sec)
VISO
7500
Isolation Resistance (V = 500 V)
RISO
1011
CISO
-
Isolation Capacitance (V = a
v. f
= 1 MHz)
1.3
0.2
-
mA
-
0.5
-
Volts
I"S
I"S
-
I"S
-
Vac(pk)
-
pF
JLS
0
TYPICAL CHARACTERISTICS
2
I
- - - - - PULSE'ONLY
- - - PULSE OR DC
,'1
8
,
6
.,.,.
4
r2
Tt=~
11- ~
~
100"C
I
-
-
I I
/
1
/
NORMALIZED TO:
lOrnA
IF
.,.,
1
r""
.....
.,.,
10
100
IF. LED FORWARD CURRENT (mAl
1000
0.51251020
IF. LEO INPUT CURRENT (mAl
Figure 1. LED Forward Voltage versus Forward Current
4-4
50
Figure 2. Output Current versus Input Current
4N25,4N25A,4N26,4N27,4N28
28
I
24
<
.E.
~
~
~.Y
I
~'0~A-
V
20
i'"
/'
/
12
/
I /'
-
u
~
0.7
:: 0.5
8
~
2mA_
lmA-
o
25°C-
!z
~
:::>
5mA-
/
/I.
o
NORMALIZED TO TA
~
,/
16
10
o
i'"
0:
f'!
-
-r-
10
2345678
VCE. COLLECTOR·EMlmR VOLTAGE (VOLTS)
0.2
o
.Y o. 1
Figure 3. Collector Current versus
Collector-Emitter Voltage
-60
-40 -20
0
20
40
60
TA. AMBIENT TEMPERATURE ('C)
80
100
Figure 4. Output Current versus Ambient Temperature
100
0
10V
VCC
20
RL
0
5-
-
RL
1001
2
80
40
60
TA. AMBIENT TEMPERATURE ('C)
1
0.1
100
0.2
!
VCC
10 V
1
~
;::::
100
~
20
I-- r-..!L
50
100
= 1000
V
WV
V
10
100
:::>
"
" "::::
0.2
20
I-
~
~
1
0.1
W
0
10
j
2
\
VCC
g;:
~
I
5
\.
100
70
50
~b.t
20
1
1,
~
1,
Figure 6. Rise and Fall Times
=f-f
~
;::::
z 10
l5
-
IF. LED INPUT CURRENT (rnA)
Figure 5. Dark Current versus Ambient Temperature
100
70
50
If
1000
0.5 0.7 1
2
5 7 10
20
IF. LED INPUT CURRENT (rnA)
Y
1
0.1
50 70100
Figure 7. Turn-On SWitching Times
0.2
5 7 10
0.50.7 1
IF. LED INPUT CURRENT (rnA)
20
Figure 8. Turn-Off Switching Times
4-5
50 70100
4N25,4N25A,4N26,4N27,4N28
0
IF
0
IS
I
V
7"A
18
6"A
16
~
......
~ 14
5"A
~ 12
z
~ 10
4"A
4
6
8
10
12
14
16
VeE, COLLECTOR·EMlmR VOLTAGE (VOLTS)
18
CeE
-
o
I
I
T
0.1
0.2
0.5
I:::..
1
2
5
V, VOLTAGE (VOLTS)
10
~
20
Figure 10. Capacitances versus Voltage
Figure 9. DC Current Gain (Detector Only)
WAVEFORMS
TEST CIRCUIT
I
= 10mA--.
I
I
I
I
I
I
10%
INPUT PULSE
L
'
--.JI
IF
I'-
u 6
0.05
20
:--.
......
2"A
1 /LA
'!'oo,
CEB
o
;!t 8
1)
3"A
f=IMHz
ec1'
I
I
I
~--n-:-l!----
90%--:'1- ______ 1- _1 ____ OUTPUT PULSE
IN:J ::
III
--: : - I,
I
I
Ion - . : : Figure 11. Switching Times
4-6
I
I I
I
I I
~ :-- If
->!
I
:-Ioff
50
6-Pin DIP Optoisolators
Darlington Output
The 4N29/A, 4N30, 4N31 , 4N321A and 4N33 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon photodarlington detector.
It is designed for use in applications requiring high sensitivity at low input currents.
• High Sensitivity to Low Input Drive Current
• Meets or Exceeds all JEDEC Registered Specifications
Applications
• Low Power LogiC Circuits
• Interfacing and coupling systems of
different potentials and impedances
Rating
[CTR
100% Min)
[CTR
50% Min)
[CTR 500% Min)
"Motorola Praferred Devices
STYLE 1 PLASTIC
• Telecommunications Equipment
• Portable Electronics
• Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
4N29
4N29A
4N30*
=
4N31
=
4N32*
4N32A*
4N33
=
I Symbol
Value
Unit
VR
3
Volts
IF
60
mA
Po
120
1.41
mW
mWI"C
STANDARD TliRU HOLE
CASE 730A-04
INPUT LED
Reverse Voltage
Forward Current -
Continuous
LED Power Dissipation @ TA = 25°C
Derate above 25°C
OUTPUT DETECTOR
Collector-Emitter Vollage
VCEO
30
Volts
Emitter-Collector Voltage
VECO
5
Volts
Collector-Sase Vollage
VCBO
30
Volts
IC
150
mA
Po
150
1.76
mW
mWI"C
VISO
7500
Vac
Po
250
2.94
mW
mWI"C
Ambient Operating Temperature Range (2)
TA
-55 to +100
°c
Storage Temperature Range
Tstg
-55 to +150
°C
TL
260
°C
Collector Current -
Continuous
Detector Power DisSipation @ TA = 25°C
Derate above 25°C
~
"T" LEADFORM
WIDE SPACED 0.4"
CASE 73OD-05
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 73OC-04
(STANDARD PROFILE)
TOTAL DEVICE
Isolation Surge Vollage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Soldering Temperature (10 sec, 1/16" from case)
(1) Isolation surge voltage Is an Intemal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test Infonnation.
CASE 730F-114
(LOW PROFILE)
SCHEMATIC
::JS~~:
3D--
~4
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
4-7
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33
ELECTRICAL CHARACTERISTICS (TA ~ 25"<: unless otherwise noted)
I
I
Symbol
Min
Typ
Max
Unit
*Reverse Leakage Current
(VR ~ 3V, RL ~ 1 M ohms)
IR
-
0.05
100
pA
"Forward Voltage
(IF = 10 rnA)
VF
1.34
1.S
Volts
Capacitance
(VR = 0 V, f
C
-
18
-
pF
ICED
-
-
100
nA
Characteristic
INPUT LED
~
1 MHz)
= 2S"C and 'F = 0, unless otherwise noted)
OUTPUT DETECTOR (TA
"Collector-Emitter Dark Current
(VCE = 10 V, Base Open)
'Coliector'Base Breakdown Voltage
(lC = 100 pA, IE = 0)
V(BR)CBO
30
-
-
Volts
*Collector-Emitter Breakdown Voltage
(lC = 100 pA, IB = 0)
V(BR)CEO
30
-
-
Volts
'Emitter-Collector Breakdown Voltage
(IE = 100 pA, IB = 0)
V(BR)ECO
S
-
-
Volts
hFE
-
16K
-
-
-
-
rnA
DC Current Gain
(VCE = S V, IC
COUPLED (TA
=
= SOO p.A)
25"C unless otherwise noted)
'Collector Output Current (1)
(VCE = 10 V, IF = 10 rnA. IB
4N32,4N33
4N29,4N30
4N31
= 0)
Isolation Surge Voltage (2, 3)
(60 Hz ac Peak. 1 Second)
50
10
5
-
7500
2500
1500
-
IC
VISO
*4N29,4N32
*4N30, 4N31, 4N33
Isolation Resistance (2)
(V = 500 V)
-
RISO
*Collector-Emitter Saturation Voltage (1)
4N31
4N29, 4N39, 4N32, 4N33
(lC = 2 rnA. IF = 8 rnA)
Turn-On Time
(lC = 50 rnA. IF
= 200 rnA, VCC =
Turn-Off Time
(lC = 50 rnA, IF
= 200 rnA, VCC = 10 V)
Volts
-
Ohms
-
1.2
1
CISO
-
0.2
-
pF
ton
-
0.6
5
p.s
17
40
100
VCE(sat)
Isolation Capacitance (2)
(V = 0 V, f = 1 MHz)
1011
-
Volts
10 V)
toff
p.s
-
4N29, 30, 31
4N32,33
45
*Indicates JEDEC Registered Data.
111 Pulse Test: Pulse Width = 300,... Duty Cycle" 2%.
(2) For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common.
(3) Isolation Surge Voltage,
Visa. is an inte~nal device dielectric breakdown rating.
TYPICAL CHARACTERISTICS
1
,
-~~_I_,-!~I~~ ON~Y I
I
~ 1.8 ----PULSE OR DC
~
~
~
1/
1.6
I
"
Ei
~
I
,
~
~
1.4
~1. 1
I
= -55'C
t'i .,8t
-TA
l-tr
25"C
:;..;:.
l00"C
f-'"
""~
f- NORMAlIZED TO: IF
10mA
TA = 25"C
~
I
!Z
~
I
a
g
o
10
~
V
::: 0.1 TA
I
1/ .....
~
100
1000
10
IF. LED FORWARD CURRENT (mAl
Figure 1. LED Forward Voltage versus Forward Current
55'CTHR
I'""
~
~R+25"C
8
I--'
-
- '-t7~""
+1
0.01
0.5125102050
IFo LED INPUT CURRENT (mA)
Figure 2. Output Current versus Input Current
4-8
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33
140
I
120
.,.,
I
-
I
--i;': 10~A
i5
I
I
I
L
I
~
~
~ 0.7
I
20
2mA
v
1 ~A
o y
o
NORMALIZED TO TA = 2SOC-
a
5"1A
f-""
10
3
4
5
7
8
VCE. COLLECTOR-EMITTER VOLTAGE IVOLTS)
O.S
~
0.2
~0.1
10
2
~
40
50
50
~
ENORMALIZED TO: VCE = 10 V
~
TA
= 2SoC
,./
........
"-....
..........
./
..........
:---
""
1
0
20
40
00
00
V
./
./
-00 -40 -20
20
Figure 4. Output Current versus Ambient Temperature
NORMALIZED TO TA = 2S0C
"""
0
TA. AMBIENT TEMPERATURE 1°C)
Figure 3. Collector Current versus
Collector-Emitter Voltage
I,
-00 -40 -20
100
TA. AMBIENT TEMPERATURE 1°C)
Figure 5. Collector-Emitter Voltage versus
Ambient Temperature
""
20
./
l~V
40
60
TA. AMBIENT TEMPERATURE IOC)
100
Figure 6. Collector-Emitter Dark Current versus
Ambient Temperature
1000
1000
R~ 11~
VCC
RL - 1000
10V
\.
100
100
_100
].
w
"
10
'"F
100
10
10
VCC
;0
1
0.1
~
0.2
O.S
1
2
S 10
IF. LED INPUT CURRENT ImA)
20
50
1
0.1
100
Figure 7. Turn-On Switching Times
0.2
10V
0.51
51020
IF. LED INPUT CURRENT ImA)
Figure 8. Tum-Off Switching TImes
4-9
50
100
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33
14
100
Ie - 0.1 pA
0
t-IF
0.6pA
/'
I I
CLEO
0.5pA
.,.
0.4pA
V
0.3pA
1=1 MHz
GeB
0.2pA
~
I
6
8
10
12
14
16
Vee, COLLECTOR·EMlmR VOLTAGE (VOLTS)
18
1
0.01
20
0.1
~
II
1111
10
INPUT PULSE
'
I
I
I
I
I
1i\-----:-li----
RL
:::
L
~
C=50~~=10V
IN~
"C,~"
WAVEFORMS
TEST CIRCUIT
':-1
111111
1
V, VOLTAGE (VOLTS)
Figure 10. Capacitances versus Voltage
Figure 9. DC Current Gain (Detector Only)
IF = 200 mA
"-
CEB
111111
11111
0.1 pA
I
I
10%
90%--:.1______ 1- _1 ____ OUTPUT PULSE
OUTPUT
PULSE WIDTH
<1 ms
~
I I
I
:
- : '+-- 1,
Ion --+l:+Figure 11. Switching Times
4-10
I I I
~:-- If
I
: I
~ I :--10ff
100
4N35*
4N36
4N37
6·Pin DIP Optoisolators
Transistor Output
(CTR = 100% Min]
*Motorola Preferred Device
STYLE 1 PLASTIC
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
• High Current Transfer Ratio - 100% Minimum @ Spec Conditions
• Guaranteed Switching Speeds
• Meets or Exceeds all JEDEC Registered Specifications
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of
different potentials and impedances
STANDARD THRU HOLE
CASE 730A-114
• Regulation Feedback Circuits
• Monitor & Detection Circuits
• Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I
Value
Unit
VR
6
Volts
IF
60
mA
Po
120
mW
1.41
mWtoC
Symbol
"T" LEADFORM
WIDE SPACED 0.4"
CASE 730D-05
INPUT LED
Reverse Voltage
Forward Current -
Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
"s"r'F" LEADFORM
SURFACE MOUNT
CASE 73DC-Q4
(STANDARD PROFILE)
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCEO
30
Volts
Emitter-Base Voltage
VEBO
7
Volts
Collector-Base Voltage
VCBO
70
Volts
IC
150
rnA
Po
150
mW
1.76
mWtoC
VISO
7500
Vac
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Po
250
2.94
mWtoC
Ambient Operating Temperature Range (2)
TA
-55 to +100
°C
Tstg
-55 to +150
°C
TL
260
°C
Collector Current -
Continuous
Detector Power DisSipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
CASE 73DF-114
(LOW PROFILE)
SCHEMATIC
TOTAL DEVICE
Isolation Source Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Storage Temperature Range
Soldering Temperature (10 sec, 1/16" from case)
mW
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITIER
5. COLLECTOR
6. BASE
(1) Isolation surge voltage IS an tntemal deVice dlelectnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test information.
4-11
4N35, 4N36, 4N37
= 25"(; unless otherwise noted)
ELECTRICAL CHARACTERISTICS ITA
I
I
Characteristic
Symbol
Min
Typ
Max
Unit
VF
0.8
0.9
0.7
1.15
1.3
1.05
1.5
1.7
1.4
V
-
-
10
pA
18
-
pF
INPUT LED
Forward Voltage (IF
=
10 mAl
Reverse Leakage Current IVR
Capacitance IV
= 0 V, f =
TA
TA
TA
= 25'C
= -55'C
= 10o-C
= 6 V)
IR
1 MHz)
CJ
OUTPUT TRANSISTOR
Collector-Emitter Dark Current IVCE
IVCE
Collector-8ase Dark Current IVCB
=
= 10 V, TA =
= 30 V, TA =
10 V)
=
Collector-Emitter Breakdown Voltage (lC
Collector-Base Breakdown Voltage (lC
Emitter-Base Breakdown Voltage (IE
=
=
TA
TA
25'C)
10o-C)
=
=
-
ICEO
25'C
100'C
ICBO
1 rnA)
100 pAl
100 pAl
1
-
0.2
100
50
500
nA
pA
20
nA
VIBR)CEO
30
45
-
VIBR)CBO
70
100
-
VIBR)EBO
7
7.8
-
hFE
-
400
7
-
-
19
-
pF
9
-
pF
= 2 rnA, VCE = 5 V)
Collector-Emitter Capacitance If = 1 MHz, VCE = 0)
Collector-Base Capacitance If = 1 MHz, VCB = 0)
Emitter-Base Capacitance If = 1 MHz, VEB = 0)
DC Current Gain (lC
CCE
CCB
CEB
V
V
V
pF
COUPLED
Output Collector Current
(IF = 10 rnA, VCE = 10 VI
TA
TA
TA
Collector-Emitter Saturation Voltage (lc
= 0.5 rnA,
IF
=
= 25'C
= ~55'C
= l00'C
10
4
4
IC
10 rnA)
VCElsat)
Turn-On Time
Ioff
(lC = 2 rnA, VCC = 10 V,
RL = 100 n, Figure 11)
Rise Time
tr
Fall Time
= 60 Hz, t = 1 sec)
Isolation Current IVI_O = 3550 Vpk)
IVI_O = 2500 Vpkl
IVI_O = 1500 Vpk)
Isolation Resistance IV = 500 V)
Isolation Capacitance IV = 0 V, f = 1 MHz)
Isolation Voltage If
4N35
4N36
4N37
-
-
ton
Turn-Off Time
30
tf
-
VISO
7500
-
-
rnA
-
0.14
0.3
V
7.5
10
,.s
5.7
10
3.2
-
4.7
-
-
Vaclpkl
8
100
100
100
RISO
1011
-
-
n
CJSO
-
0.2
2
pF
IISO
pA
TYPICAL CHARACTERISnCS
2
iii
~
-~~...!-~~~~ONtv'
1.8 ----PULSE
OR DC
I
.I
~
~
~
~
!-TA
~1.
=
(J.~
2nI
HI
V
-55'C
2~
10O"C
I-'
~
V
~
8
V
.....
I
o. I
5
.,..
5
o
I---'
10
100
'F, LED FORWARD CURRENT (mA)
NORMALIZED TO:
IF lOrnA
a'"
I
1.4
f=
r-
gs
g
c
10
~
1
/1
1
,/
!i!:; 1.6
6
~
1
c.:;
- 0.Q1
1000
Figure 1. LED Forward Voltage versus Forward Current
4-12
0.5
1
2
5
10
'F, LED INPUT CURRENT (mA)
20
50
Figure 2. Output Current versus Input Current
4N35, 4N36, 4N37
28
........r-
24
,./
<
~
§
~
il§
~
,/
16
/'
u
a:
~ 12
/
~
8
!z
~
v
a
a:
5mA-
~ 0.5
I 1/
9
8
I
II.
0
1
~ 0.7
I--
1/
NORMALIZED TO TA = 25°C -
o
,/
g 20
10
5
~lO~A-
2mA_
~
1 mA----,
o
2345678
VCE, COLLECTOR-EMlffiR VOLTAGE IVOLTS)
0.2
::::>
9 0.1
10
-50
-~
-w
0
w
~
50
100
80
TA, AMBIENT TEMPERATURE (OC)
Figure 3. Collector Current versus
Collector-Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
100
f:= NORMALIZED TO:
F=
~
VCE
TA
0
10V
25°C
VCC
10V
0
RL
0
I==VCE
5f:= RL
100
1
1
20
1
0.1
100
80
40
60
TA, AMBIENT TEMPERATURE (OC)
0.2
Figure 5. Dark Current versus Ambient Temperature
100
0
0
VCC
1
0.1
10V
100
0
10
7
5
'" ~
20
VCC
t--.RL = 1000
5 7 10
0.50.7 1
20
IF, LED INPUT CURRENT (rnA)
1\
I
1
2
5
10
IF, LED INPUT CURRENT (rnA)
0
"I"
0.2
0.5
'\
100
0
0
~
2
t,
~
t,
50
100
Figure 6. Rise and Fall Times
~N:
0
7
5
1 r--
2
I=;;; ~10V
0
tf
1000
30 V
1
0.1
Figure 7. Turn-On Switching Times
V
100
-r
2
50 70100
V
0.2
0.5 0.7 1
2
5 7 10
IF, LED INPUT CURRENT (mA)
20
Figure 8. Turn-Off Switching Times
4-13
10V
50 70100
4N35, 4N36, 4N37
0
0
7pA
8
I'
6pA
6
V
5pA
IF
IS
CI
t'~
ec1'
I
I
4
2
0
4pA
4
6
8
10
12
14
16
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
18
6
2pA
4
lpA
2
o
0,05
20
Figure 9. DC Current Gain (Detector Only)
-
CCE
T
0.1
0.2
I
I
0.5
:::..
0::::::
1
2
5
V, VOLTAGE (VOLTS)
10
20
Figure 10. Capacitances versus Voltage
WAVEFORMS
TEST CIRCUIT
-1I
VCC = 10V
.~100.n
I
:
I
,,~:: ~INPUT CURRENT ADJUSTED
TO ACHIEVE Ic = 2 rnA
'r--r--- ....
CES
8
3pA
f= 1 MHz
!-
INPUT PULSE
I
I
I
I
1~ ~_--nl_Z---90% _
-Li- ______:__1____
II,
""":\+--tr
-=
I 1
ton - - : : -
Figure ". Switching Times
4-14
I
I I
"'1I -"\I :-tf
I
--+!
I
:-Iott
OUTPUT PULSE
50
4N38
4N38A
&·Pin DIP Optoisolators
Transistor Output
[CTR = 20% Mini
STYLE 1 PLASTIC
The 4N38 and 4N38A devices consist of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
• Guaranteed 80 Volt V(BR)CEO Minimum
• Meets or Exceeds all JEDEC Registered Specifications
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of
different potentials and impedances
MAXIMUM RATINGS (TA ~ 25'C unless otherwise noted)
I
STANDARD THRU HOLE
CASE 730A-D4
• Monitor & Detection Circuits
I
"r' LEADFORM
WIDE SPACED 0.4"
CASE 730D-05
Value
Unit
VR
3
Volts
IF
80
mA
IF(pk)
3
A
Po
t50
mW
1.41
mW/'C
VCEO
80
Volts
VECO
7
Volts
VCBO
80
Volts
IC
100
rnA
Po
150
mW
1.76
mW/'C
SCHEMATIC
VISO
7500
Vac
10---., ~6
Total Device Power DiSSipation @ TA = 25'C
Derate above 25'C
Po
250
2.94
mW
mWrC
Ambient Operating Temperature Range (3)
TA
-55 to +100
'C
Tstg
-55 to +150
'C
TL
260
'c
Rating
Symbol
INPUT LED
Reverse Voltage
Forward Current -
Continuous
Forward Current -
Pk (PW ~ 300 1lS, 2% duty cycle)
LED Power Dissipation @ TA = 25'C
with Negligible Power in Output Detector
Derate above 25'C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
OUTPUT TRANSISTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Collector Current -
Continuous
Detector Power Dissipation @ TA ~ 25'C
with Negligible Power in Input LED
Derate above 25'C
CASE 730F-04
(LOW PROFILE)
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Storage Temperature Range
Soldering Temperature (10 sec, 1/16" from case)
(1) Isolation surge voltage IS an Internal deVice dlelectnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) 4N38 does not require UL approval; 4N38A does. Otherwise both parts are identical. Both parts built by Motorola have UL approval.
(3) Refer to Quality and Reliability Section tor test infonnation.
4-15
2o---J\
5
3D--
4
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
4N38,4N38A
ELECTRICAL
I
CHARACTERISTICS ITA
= 25'C unless otherwise noted)
I
Characteristic
Min
Typ
Max
Unit
-
1.15
1.3
1.05
1.5
Volts
IR
-
-
100
pA
CJ
-
18
-
pF
20
50
nA
6
-
pA
2
20
nA
-
Volts
Symbol
INPUT LED
Forward Voltage (IF
=
Reverse Leakage Current (VR
Capacitance (V
TA = 25°C
TA = -55'C
TA = 10O'C
10 rnA)
= 0 V, f =
VF
= 3 V)
1 MHz)
-
OUTPUT TRANSISTOR
ICBO
-
V(BR)CEO
80
120
V(BR)CBO
80
120
V(BR)ECO
7
7.8
Collector-Emitter Dark Current
(VCE
(VCE
ICEO
= 60 V, TA = 25°C)
= 60 V, TA = 10o-C)
ICEO
= 60 V)
Collector-Emitter Breakdown Voltage (lC = 1 rnA)
Collector-Base Breakdown Voltage (lC = 1 pAl
Emitter-Collector Breakdown Voltage (IE = 100 pAl
DC Current Gain (lC = 2 rnA, VCE = 5 V)
Collector-Emitter Capacitance (f = 1 MHz, VCE = 0)
Collector-Base Capacitance (f = 1 MHz, VCB = 0)
Emitter-Base Capacitance (f = 1 MHz, VEB = 0)
Collector-Base Dark Current (VCB
-
hFE
CCE
400
-
8
-
Volts
Volts
-
CCB
-
21
CEB
-
8
-
pF
pF
pF
COUPLED
=
= 1 V)
= 4 rnA. IF = 20 rnA)
Turn-On TIme (lC = 2 rnA. VCC = 10 V, RL = 100 n, Figure 11)
Turn-Off Time (lC = 2 rnA, VCC = 10 V, RL = 100 n, Figure 11)
Rise Time (lC = 2 rnA. VCC = 10 V, RL = 100 n, Figure 11)
Fall Time (lC = 2 rnA, VCC = 10 V, RL = 100 n, Figure 11)
Isolation Voltage (f = 60 Hz, t = 1 sec)
Isolation Resistance (V = 500 V)
Isolation Capacitance (V = 0 V, f = 1 MHz)
Output Collector Current (IF
4
7
-
-
ton
-
5
Ioff
-
4
-
2
-
tf
-
VISO
7500
-
-
RISO
1011
-
-
0
0.2
-
pF
20 rnA. VCE
IC
Collector-Emitter Saturation Voltage (lC
VCE(sat)
tr
CISO
-
3
rnA
1
Volts
p.s
p.S
p.S
p.s
Vac(pk)
TYPICAL CHARACTERISTICS
r--~~~-~~~ONlyl
r - - - - - PULSE OR DC
1/
~ 1.6
t:;
-55"C
Ht1£
r-t1
1
1
l00"C
I"'"
i-""
i-""
I
~
I
I-
~
I
-
NORMALIZED TO:
IF - 10mA
./
V
1
a:
a
~
V
o. 1
8
1..-- ....
I--'"
10
100
IF, LED FORWARD CURRENT (mA)
=
~o
g
!¥ 1.4
~ I-TA =
!f 1.2
10
I(j
I
.I /
w
C
I
I
1000
~~o.o1
-
0.1
0.2
0.512
1020
IF, LED INPUT CURRENT (mA)
50
Figure 2. Output Current versus Input Current
Figure 1. LED Forward Voltage versus Forward Current
4-16
100
4N38,4N38A
14
~
~
12
'F
~
10mA
~
aa:
t
/
8
1/
.Y
o
'=
~
>-
ia
1
~
0.7
0.5
~
5mA f----=
~
25°C
NORMALIZED TO TA
ii!
1>- 10
::J
8
2mA
1 mA
2
0
>-
r-r--
~
0.2
'3
'Q 0.1
-~
-00
10
2
3
4
5
7
VCE, COLLECTOR-EMlffiR VOLTAGE (VOLTSI
-w
w
0
~
80
00
100
TA, AMBIENT TEMPERATURE (OCI
Figure 3. Collector Current versus
Collector-Emitter Voltage
Figure 4. Output Current versus
Ambient Temperature
~
~
100
ii!
0
~
>-
i'5
a:
103
'"
i'3
102
a:
::::>
u
a:
VCE ~ 70~
-NORMALIZEO TO:
VCE~10V
~ 25°C
==
,., / '
TA
-
,.,
50
....-
3OV....A'
10V
20
....-
./
If
f::::=
RL
r--
./
RL
1000
~
00
00
1
0.1
100
0.2
II
0.5
TA, AMBIENT TEMPERATURE (OCI
Figure 5. Dark Current versus
Ambient Temperature
I,
-
1~.
II
....w
r--.
If"
~201'\
50
10
'F, LED INPUT CURRENT (mAl
100
Figure 6. Rise and Fall Times
100
100
50
VCC
-
10 V
:--..
VCC
50
~
~
>=
~L-~
~
~
100
RL
~
1000
10
a:
0
1
I
0.2
0.5
l 1"':--
1
2
5
10
IF, LED INPUT CURRENT (mAl
20
50
Figure 7. Turn-On Switching Times
----
10
1
0.1
100
./
r-..;;~
3i
l'..
10V
20
~
0.1
10V
Vee
V
I
0.2
0.5
10
'F, LED INPUT CURRENT (mAl
20
Figure 8. Turn-Off Switching Times
4-17
50
100
4N38,4N38A
...
20
IF = 0
IB ='8pA
18
L
7pA
16
1/
V
6pA
1
SpA
4pA
~ 10
3pA
§
2pA
U
18
r::::
12
CC~
CCE
CEB
6
,
... CLEO
""'=
4
..... t--
2
lpA
4
6
8
10
12
14
16
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
f = 1 MHz
14
~
~
-- r--.t-.
0
O.S
20
0.1
Figure 9_ DC Current Gain (Detector Only)
0.2
O.S
1
2
V, VOLTAGE (VOLTS)
10
20
Figure 10_ Capacitances versus Voltage
WAVEFORMS
TEST CIRCUIT
L
--.J
Vee = 10V
I
,
,~~ c$:::
INPUT PULSE
'
'
i
iI
,
--:.i. ______L_j ____
10%1i\-----I-Zl---90%
OUTPUTPULSE
~
I I
--:
i+- I,
I I
INPUT CURRENT ADJUSTED
TO ACHIEVE IC = 2 rnA.
ton --::Figure 11. Switching Times
4-18
I
I I
--t->'
I
~
I+- If
I
: -toff
50
CNY17-1
[CTR = 40-80%)
CNY17-2
[CTR = 63-125%)
CNY17-3
a-Pin DIP Optoisolators
Transistor Output
[CTR = 100-200%)
The CNY17-1, CNY17-2 and CNY17-3 devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon phototransistor detector.
Motorola Preferred Devices
STYLE 1 PLASTIC
• Closely Matched Current Transfer Ratio (CTR)
• Guaranteed 70 Volt V(BR)CEO Minimum
Applications
• Feedback Control Circuits
• Interfacing and coupling systems of
different potentials and impedances
• General Purpose Switching Circuits
• Monitor and Detection Circuits
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I
Symbol
Value
Unit
INPUT LED
Reverse Voltage
Forward Current- Continuous
Forward Current- Pk (PW = 1 ~s, 330 pps)
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
VR
6
Volis
IF
60
mA
IF(pk)
1.5
A
Po
120
mW
1.41
mW/oC
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCEO
70
Volis
Emitter-Base Voltage
VEBO
7
Volts
Collector-Base Voltage
VeBO
70
Volis
Collector Current- Continuous
Ie
100
mA
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
Po
150
mW
1.76
mW/"C
VISO
7500
Vae
PD
250
2.94
mW
mW/"C
STANDARD THRU HOLE
CASE 730A-04
~
"T" LEADFORM
WIDE SPACED 0-4"
CASE 7300-05
"s"r'F" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
CASE 730F-04
(LOW PROFILE)
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ae Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Ambient Operating Temperature Range (2)
Storage Temperature Range
Soldering Temperature (lOsee, 1/16" from case)
TA
-55 to +100
°C
Tstg
-55 to +150
°e
TL
260
°C
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
(1) Isolation surge voltage IS an Internal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test information.
4. EMITTER
5. COLLECTOR
6. BASE
4-19
CNV17-1, CNV17-2, CNV17-3
ELECTRICAL CHARACTERISTICS ITA
I
=
25"C unless otherwise noted)
I
Characteristic
Symbol
Min
Typ
Max
Unit
1.35
1.5
1.25
1.65
Volts
INPUT LED
Forward Voltage (IF = 60 mAl
TA = 25"C
TA = -55"C
TA = 10O"C
VF
Reverse Leakage Current (VR = 6 V)
IR
Capacitance (V = 0, f = 1 MHz)
CJ
-
-
-
10
pA
18
-
pF
5
5
50
100
nA
-
pA
OUTPUT TRANSISTOR
ICBO
-
0.5
Collector-Emitter Breakdown Voltage (lC = 1 mAl
V(BR)CEO
70
120
Collector-Base Breakdown Voltage (lc = 100 pAl
V(BR)CBO
70
120
Emitter-Base Breakdown Voltage (IE = 100 pAl
V(BR)EBO
7
7.8
-
400
-
-
8
pF
pF
Collector-Emitter Dark Current
(VCE = 10V, TA = 25"C)
(VCE = 10 V, TA = 100"C)
CNY17-1,2
CNY17-3
ICEO
All devices
ICEO
Collector-Base Dark Current (VCB = 10 V)
1.6
DC Current Gain (lC = 2 mA, VCE = 5 V)
hFE
Collector-Emitter Capacitance If = 1 MHz, VCE = 0)
CCE
Collector-Base Capacitance (f = 1 MHz, VCB = 0)
CCB
-
21
-
Emitter-Base Capacitance (f = 1 MHz, VEB = 0)
CEB
-
8
-
4
6.3
10
6
10
15
nA
Volts
Volts
Volts
pF
COUPLED
Output Collector Current
(IF = 10 mA. VCE = 5 V)
CNY17-1
CNY17-2
CNY17-3
Collector-Emitter Saturation Voltage (lc = 2.5 mA, IF = 10 mAl
IC
VCE(sat)
Delay Time (IF = 10 mA. VCC = 5 V, RL = 750, Figure 11)
td
Rise Time (IF = 10 mA. VCC = 5 V, RL = 750, Figure 11)
tr
Storage TIme (IF = 10 mA. VCC = 5 V, RL = 750, Figure 11)
ts
Fall Time (IF = 10 mA. VCC = 5 V, RL = 750, Figure 11)
tf
Delay Time
(IF = 20 mA, VCC = 5 V, RL = 1 kG, Figure 11)
td
CNY17-1
(IF = 10 mA. VCC = 5 V, RL = 1 kG, Figure 11)
CNY17-2,3
Rise TIme
(IF = 20 mA. VCC = 5 V, RL = 1 kG, Figure 11)
CNY17-1
(IF = 10 mA, VCC = 5 V, RL = 1 kG, Figure 11)
CNY17-2,3
CNY17-1
(IF = 10 mA, VCC = 5 V, RL = 1 kG, Figure 11)
CNY17-2,3
ts
Fall TIme
(IF = 20 mA. VCC = 5 V, RL = 1 kO, Figure 11)
CNY17-1
(IF = 10 mA. VCC = 5 V, RL = 1 kO, Figure 11)
CNY17-2,3
mA
0.18
0.4
Volts
1.6
5.6
/,S
1.6
4
/,S
0.7
4.1
/,S
2.3
3.5
/,S
1.2
5.5
1.8
8
-
3.3
4
-
5
6
4.4
34
2,7
39
9.7
20
-
-
/,s
tr
Storage Time
(IF = 20 mA. VCC = 5 V, RL = 1 kG, Figure 11)
8
12.5
20
tf
-
/,S
/,s
1'8
9.4,20
Isolation Voltage (f = 60 Hz, t = 1 sec)
VISO
7500
-
Isolation Resistance (V = 500 V)
RISO
1011
-
Isolation Capacitance (V = 0, f = 1 MHz)
CISO
-
0.2
4-20
24
0.5
Vac(pk)
°
pF
CNY17-1, CNY17-2, CNY17-3
TYPICAL CHARACTERISTICS
2
-~~~-I~JJL~JON~Y I
~ 1.8 - - - - PULSE OR DC
~
~
~
~ 10
I
I
II
I
1/
1.6
=
~
~
o
I
_
~
I
./
1
I-
~
a:
I
NORMALIZED TO:
IF
lOrnA
a
~
~
C>
~ 1.4
~ -TA =
-If 1.2
V
-S5'C
"ittR
i-""
I-
:::>
5
0.0.0
~
10
O. 1
8
.".,
l00'C
l-i1
V
~
100
1000
2
1
0.1
0.2
O.S
IF, LED FORWARD CURRENT (rnA)
Figure'. LED Forward Voltage versus Forward Current
14
12
<1'
E 10
I-
IF
50
100
Figure 2. Output Current versus Input Current
I
o
I
~
~
o
~
lOrnA
=
20
1
10
IF. LED INPUT CURRENT ImA)
Z
~
=
25°C
NORMALIZED TO TA
~
I-
~
a:
:::>
u
a:
:::>
u
/
~
SmA
0
u
~ 0.7
-
~ 0,5
L
.9
2mA
1 rnA
0
0
°u
I-
-
~ 0.2
==
:::>
~O.l
-00
10
4
-40 -W
0
W
40
00
80
100
TA. AMBIENT TEMPERATURE ('C)
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Current versus
Collector-Emitter Voltage
Figure 4. Output Current versus
Ambient Temperature
100
VCE = JOy V
r-- NORMALIZED TO:
:=
VCE = 10V
TA = 2S'C
'---
V
V
V
30V...A'
10V
V
.5
.".,
~
F
.".,
10
1000
' - - RL
1
.".,
40
60
TA, AMBIENT TEMPERATURE I'C)
80
t
tf
r= RL
.".,
20
5V
20
V
1
VCC
50
1
0.1
100
0.2
0.5
--
t,
If'
~ f'\
10
20
IF. LED INPUT CURRENT (rnA)
Figure 5. Dark Current versus
Ambient Temperature
Figure 6. Rise and Fall Times
CNY17-' and CNY17-2
4-21
50
100
CNV17-1, CNV17-2, CNV17-3
100
100
50
sv
VCC
.5
-~
r--,t-
~
r--!L
20
;:::
~
I:t 10
100
sv
Vee
50
RL
= 1000
-'
~
i---
a:
~
1
:'-...
O.S
0.2
10
""r-.
1
0.1
100
j
0
1
2
S
10
IF. LED INPUT CURRENT (mAl
1
20
100
50
0.1
!'Igure 7. Tum-On Switching Times
=0
18
= 81'04
61'04
~
41'04
~ 10
~
g
~
ffi
VCE. COLLECTOR-EMmER VOLTAGE (VOLTSI
W
~~
Cc~
12
CCE
~
11'04
W
o
o.s
20
0.1
0.2
o.s
1
2
V, VOLTAGE (VOLTSI
WAVEFORMS
Vee = SV
~
CLEO
~
10
20
Figure 10. Capacitances versus Voltage
TEST CIRCUIT
RL =
100
i'
r::::=
CE8
Figure 9. DC Current Gain (Detector Only)
I~f
SO
f = 1 MHz
U
21'04
8
r--.t'-
14
sl'o4
31'04
6
20
.....
18
16
71'04
/'
If
4
1
2
S
10
IF. LED INPUT CURRENT (mAl
Figure S. Turn·Off Switching Times
CNY17-1 and CNY17-2
20
IF
o.s
0.2
lOOn
OUTPUT
Figure 11. Switching Times
4-22
so
H11A1
thru
H11A5
&·Pin DIP Optoisolators
Transistor Output
STYLE 1 PLASTIC
The HllAl thru HllA5 devices consist of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
• Current Transfer Ratios (CTR) Ranging from 10% to 50%
• Economical
Applications
• General Purpose Switching Circuits
STANDARD THRU HOLE
CASE 730A-04
• Monitor and Detection Circuits
• Interfacing and coupling systems of
different potentials and impedances
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
~
I Symbol
Value
Unit
Volts
INPUT LED
Reverse Voltage
VR
3
Forward Current - Continuous
IF
60
mA
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
PD
120
mW
1.41
mWFC
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCEO
30
Volls
Emitter-Collector Voltage
VECO
7
Volls
Collector-Base Voltage
VCBO
70
Volts
Collector Current - Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
PD
150
mW
1.76
mWFC
VISO
7500
Vae
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD
250
2.94
mW
mWFC
Ambient Operating Temperature Range (2)
TA
-55 to +100
°c
Tstg
-55 to +150
°c
TL
260
°C
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ae Voltage. 60 Hz. 1 sec Duration)
Storage Temperature Range
Soldering Temperature (10 sec. 1/16" from case)
"T" LEADFORM
WIDE SPACED 0.4"
CASE 730D.()5
Q
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-114
(STANDARD PROFILE)
CASE 730F-04
(LOW PROFILE)
SCHEMATIC
(1) Isolation surge voltage IS an Intemal deVice dielectric breakdown ratIng.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test information.
4-23
10---.
~65
2o---J\
3D-PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
4
H11A1 thru H11A5
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
I
I
Characteristic
Symbol
Min
Typ
Max
Unit
1.15
1.3
1.05
1.5
Volts
INPUT LED
Forward Voltage (IF
=
10 rnA. TA
TA
TA
Reverse Leakage Current (VR
Capacitance (V
= 0 V, f =
= 25'C)
= -55'C
= 100'C
-
VF
= 3 V)
IR
1 MHz)
CJ
-
-
0.D1
10
pA
18
-
pF
OUTPUT TRANSISTOR
Collector-Emitter Dark Current (VCE
Collector-Base Dark Current (VCB
=
=
10 V)
TA
TA
10 V)
Collector-Emitter Breakdown Voltage (lC
Collector-Base Breakdown Voltage (lC
=
Emitter-Collector Breakdown Voltage (IE
=
TA
TA
= 25'C
= 100'C
= 25'C
= l00'C
-
ICEO
ICBO
1
1
0.2
100
-
50
V(BR)CEO
30
45
100 pAl
V(BR)CBO
70
100
=
V(BR)ECO
7
7.8
-
500
-
lOrnA)
100 pAl
= 5 rnA, VCE = 5 V)
Collector-Emitter Capacitance (f = 1 MHz, VCE = 0 V)
Collector-Base Capacitance (f = 1 MHz, VCB = 0 V)
Emitter-Base Capacitance (f = 1 MHz, VEB = 0 V)
DC Current Gain (lC
-
hFE
CCE
CCB
CEB
nA
pA
20
-
nA
Volts
Volts
Volts
-
-
19
-
9
-
pF
5
2
1
3
12
7
5
9
-
rnA
0.1
0.4
7
pF
pF
COUPLED
Output Collector Current (IF
=
10 rnA, VCE
=
10 V)
H11Al
HllA2,3
HllA4
HllA5
= 0.5 rnA. IF = 10 rnA)
= 1000, Figure 11)
Turn-Off Time (IF
10 rnA, VCC = 10 V, RL = 100 0, Figure 11)
Rise Time (IF = 10 rnA. VCC = 10 V, RL = 100 0, Figure 11)
Fall Time (IF = 10 rnA, VCC = 10 V, RL = 100 0, Figure 11)
Isolation Voltage (f = 60 Hz, t = 1 sec)
Isolation Resistance (V = 500 V)
Isolation Capacitance (V = 0 V, f = 1 MHz)
Collector-Emitter Saturation Voltage (lC
Turn-On Time (IF
=
=
10 rnA. VCC
=
IC
tr
-
tf
-
VCE(sat)
10 V, RL
Ion
toff
2.8
4.5
VISO
7500
RISO
1011
-
CISO
1.3
-
-
-
1.2
Volts
-
p.s
p.s
,,"s
,,"S
Vac(pk)
-
-
0
0.2
-
pF
TYPICAL CHARACTERISTICS
-----PULSEONLY
- - - PULSE OR DC
I
I
I
/
I- Tt=~
1 l1
I
~
I
-
,"
NORMALIZED TO:
IF lOrnA
1
/
1
/
~ ..... /1-"
loo'C
I---'
10
100
IF, LED FORWARD CURRENT (mAl
1000
0.5
Figure 1. LED Forward Voltage versus Forward Current
4-24
1
2
5
10
IF. LED INPUT CURRENT (mAl
20
50
Figure 2. Output Current versus Input Current
H11A1 thru H11A5
28
-r-
24
I-"'"
V
5
;
~~10~A-
/
I-
~
V
I
~
0.7
~ 0.5
8
I /'
IJ
I-
~ O. 2
2mA_
1 mA-
/I
o
a'"
5mA-
r-
/
NORMALIZED TO TA ~ 25°C -
is
;;;
I-"'"
/'
10
o
.y 0, I
o
2345678
VCE, COLLECTOR-EMlillR VOLTAGE (VOLTSI
10
-40 -W
-~
0
W
40
~
80
100
TA, AMBIENT TEMPERATURE (OCI
Figure 3_ Collector Current versus
Collector-Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
100
I-
~
t-- NORMALIZED TO:
~
:5
~
1001==
VCE
TA
0
10V
25°C
~
"'-
VCC
10V
0
~ ~10
RL
0
:;;::J
t3~
5 r----
8
2
RL
r----
~-1
6
J:j
0.1
If
1000
lOV
o
20
40
1
0.1
100
80
60
TA, AMBIENT TEMPERATURE (OCI
0.5
0.2
Figure 5, Dark Current versus Ambient Temperature
--
100
0
0
:-t:
0
7
5
--
0
7
5
--
IIII
0.5 0.7 1
2
5 7 10
20
IF, LED INPUT CURRENT (mAl
50
20
vcc
---
100
100
t--
III
-1 0
1
0.1
Figure 7_ Turn-On Switching Times
V
--
2
50 70100
0.2
II
0.5 0.7 1
2
5 7 10
IF, LED INPUT CURRENT (mAl
20
Figure 8. Turn-Off Switching Times
4-25
10V
V
01--- 1---
10
0.2
I'
1
1
2
5
10
IF, LED INPUT CURRENT (mAl
l'-oRL ~ 1000
"I"
"~
~
0
.).
100
""I,
0
~
1
0.1
I,~
10°E-"
1
::!
~g
0
r:---...
Figure 6. Rise and Fall Times
lj
10 V
VCC
---'-'
1O0l
50 70100
H11A1 thru H11A5
0
0
7pA
18
I'
6pA
16
V
SpA
IF
la
~
ec1'
....
~ 14
I
I
~ 12
z
j5 10
4pA
§
3pA
1 p.A
o
O.OS
20
Figure 9. DC Current Gain lDetec:tor Only)
0.1
0.2
I
I
IF= 10mA~
IN:J ::
~
f=::
o.s
1
2
S
V. VOLTAGE (VOLTS)
10
20
Figure 10. capacitances versus Voltage
WAVEFORMS
TEST CIRCUIT
Vce
'"
-r-
eyE
2p.A
18
'r-r-- r--
CEa
U
4
6
8
10
12
14
16
Vee. COllECTOR·EMfmRVOLTAGE (VOLTS)
f = 1 MHz
l
RL =
~
.-JI
= 10V
INPUT PULSE
I
I
loon
1i\----1-2----Li- _____
-'- -1-___
I
1~
~OUTPUT
I
I
90% _
!
II
""'::-1,
I I
Ion ~:--
Figure 11. Switching Times
4-26
I
I I
I
I
~
-!
I
:-If
I
:--1011
OUTPUT PULSE
50
H11AA1*
=
Min)
H11AA2
=
Min)
H11AA3
&·Pin DIP Optoisolators
AC Input/Transistor Output
20%
[CTR
10%
[eTR = 50% Min)
The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of a two Gallium-Arsenide
infrared emitting diodes connected in inverse parallel, optically coupled to a monolithic
silicon phototransistor detector.
H11AA4*
[CTR = 100% Min)
*Motorola Preferred Devices
STYLE 8 PLASTIC
• Built-In Protection for Reverse Polarity
Applications
• Detecting or Monitoring ac Signals
• AC Line/Digital Logic Isolation
• Programmable Controllers
[CTR
• Interfacing and coupling systems of
different potentials and impedances
• AC/DC - Input Modules
STANDARD THRU HOLE
CASE 730A-04
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I Symbol
Value
Unit
INPUT LED
Forward Current -
Continuous (RMS)
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
IF
60
mA
Po
120
mW
1.41
mW/"C
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
OUTPUT TRANSISTOR
Collector-Emitter Voltage
Emitter-Base
Vo~age
Collector-Base Vollage
Collector Current -
Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LEOs
Derate above 25°C
VCEO
30
Volts
VEBO
5
Volts
VCBO
70
Volts
IC
150
mA
Po
150
mW
1.76
mW/"C
VISO
7500
Vac
Po
250
2.94
mW
mW/"C
TA
-55 to +100
°c
TSlg
-5510+150
°C
TL
260
°C
"s"r'F" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA
Derate above 25°C
=25°C
CASE 730F-04
(LOW PROFILE)
SCHEMATIC
Ambient Operating Temperature Range (2)
Storage Temperature Range
Soldering Temperature (10 sec, 1/16" from case)
(1) Isolation surge voltage IS an Intemal d9VJce dlelectnc breakdown rating.
For this lest, Pins 1 and 2 are common, and Pins 4. 5 and 6 are common.
18
~
2
3
(2) Refer to Quality and Relfability Section for test informatfon.
NC
PIN 1.
2.
3.
4.
5.
6.
4-27
INPUT LED
INPUT LED
NO CONNECTION
EMmER
COLLECTOR
BASE
6
:
H11AA1 thru H11AA4
ELECTRICAL CHARACTERISTICS (TA = 25'C uriless otherwise noted I
I
I
Characteristic
Symbol
Min
Typ
Max
Unit
-
1.15
1.15
1.3
1.05
1.5
I.B
Volts
-
20
-
1
1
1
INPUTLEDS
Forward Voltage
IIF = 10 mA, either directionl
TA
TA
Capacitance (V
= 0 V, f =
=
=
HllMl,3,4
HllAA2
All devices
All devices
-55'C
100'C
VF
1 MHzl
CJ
-
pF
OUll'UT TRANSISTOR
Collector-Emitter Dark Current
(VCE = 10 VI
=
ICEO
Collector-Base Breakdown Voltage IIC
=
Emitter-Collector Breakdown Voltage (IE
nA
nA
IJ.A
ICBO
0.2
-
V(BRICEO
30
45
-
Volts
100 !
u
,
~
~
~
=>
~
./'"
~
10
100
IF, LED FORWARD CURRENT (mA)
;= NORMALIZED TO:
:;t
/1
, 1"
- Tt=~
~
10
l':-If
I
I
-+!
~ toft
OUTPUT PULSE
50
H11B1*
=
Min]
H11B2*
[CTR =
Min]
H11B3
[eTR
&·Pin DIP Optoisolators
Darlington Output
(Low Input Current)
500%
200%
[CTR = 100% Min]
*Motorola Preferred Devices
STYLE 1 PLASTIC
The H11B1, H11B2 and H11B3 devices consist of a gallium arsenide infrared emitting
diode optically coupled to a monolithic silicon photodarlington detector. They are designed
for use in applications requiring high sensitivity at low input currents.
• High Sensitivity to Low Input Drive Current
Applications
• Appliances, Measuring Instruments
• I/O Interfaces for Computers
• Programmable Controllers
• Interfacing and coupling systems of
different potentials and impedances
• Solid State Relays
• Portable Electronics
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I Symbol
Value
Unit
Volls
STANDARD THRU HOLE
CASE 730A-114
"T" LEADFORM
WIDE SPACED 0.4"
CASE 730D..()5
INPUT LED
Reverse Voltsge
VR
3
Forward Current - Continuous
IF
60
mA
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
Po
150
mW
1.41
mWfOC
OUTPUT DETECTOR
Collector-Emitter Voltsge
VCEO
25
Volls
Emitter-Base Voltage
VEBO
7
Volls
Collector-Base Voltage
VCBO
30
Volts
Collector Current - Continuous
IC
100
mA
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
Po
150
mW
1.76
mWfOC
VISO
7500
Vac
Po
250
2.94
mW
mWfOC
Ambient Operating Temperature Range (2)
TA
-55 to +100
°c
Storage Temperature Range
Tstg
-55 to +150
°c
TL
260
°C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-114
(STANDARD PROFILE)
CASE 730F-D4
(LOW PROFILE)
TOTAL DEVICE
SCHEMATIC
Isolation Surge Voltsge (1)
(Peak ac Voltsge, 60 Hz, 1 sec Duration)
Total Device Power Dissipation
Derate above 25°C
@
TA = 25°C
Soldering Temperature (10 sec, 1/16" from case)
1~6
2
5
3
NC
PIN 1.
2.
3.
4.
5.
6.
(1) Isolation surge voltage IS an internal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test infonnation.
4-34
LED ANODE
LED CATHODE
N.C.
EMITIER
COLl£CTOR
BASE
4
H11B1. H11B2. H11B3
ELECTRICAL CHARACTERISTICS (TA
I
= 25'C unless otherwise noted)
I
Characteristic
Min
Symbol
Max
Unit
1.15
1.5
Volts
1.34
1.5
Volts
-
10
!LA
18
-
pF
Typ
INPUT LED
Reverse Leakage Current (VR = 3 V)
IR
-
Capacitance (V = 0 V, f = 1 MHz)
CJ
-
Forward Voltage (IF = 10 rnA)
HllBl, HllB2
VF
Forward Voltage (IF = 50 rnA)
HllB3
VF
OUTPUT DETECTOR
ICEO
-
5
100
Collector-Emitter Breakdown Voltage (lC = lOrnA)
V(BR)CEO
25
80
Collector-Base Breakdown Voltage (lC = 100 !LA)
V(BR)CBO
30
100
Emitter-Collector Breakdown Voltage (IE = 100 !LA)
V(BR)ECO
7
-
-
16K
-
Collector-Emitter Dark Current (VCE = 10 V)
DC Current Gain (lC = 5 rnA, VCE = 5 V)
hFE
Coliector·Emitter Capacitance (f = 1 MHz, VCE = 5 V)
CCE
Collector-Base Capacitance (f = 1 MHz, VCB = 5 V)
Cce
Emitter-Base Capacitance (f = 1 MHz, VEB = 5 V)
CEB
4.9
6.3
3.8
nA
Volts
Volts
Volts
pF
pF
pF
COUPLED
Output Collector Current
(IF = 1 rnA, VCE = 5 V)
HllBl
HllB2
HllB3
-
5
2
1
IC
-
-
VCE(sat)
-
0.7
n)
ton
-
3.5
Turn-Off Time (IF = 5 rnA. VCC = 10 V, RL = 100!l)
toff
-
95
Rise Time (IF = 5 rnA, VCC = 10 V, RL = 100!l)
tr
-
1
Fall Time (IF = 5 rnA, VCC = 10 V, RL = 100!l)
tf
-
2
Isolation Voltage (f = 60 Hz, t = 1 sec) (2)
VISO
7500
-
Isolation Resistance (V = 500 V) (2)
RISO
1011
-
Isolation Capacitance (V = 0 V, f = 1 MHz) (2)
CISO
Collector-Emitter Saturation Voltage (lc = 1 rnA, IF = 1 rnA)
Turn-On Time (IF = 5 rnA, VCC = 10 V, RL = 100
Note 2. For this
t~st,
-
0.2
-
rnA
-
1
Volts
-
!LS
!LS
!L s
-
Vac(pk)
-
pF
!L S
n
Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
TYPICAL CHARACTERISTICS
2
~ 1.8
-~~_I_~ ~l~~ ON~Y
I
_ _ _ _ PULSE OR DC
I
~
/
w
~ 1.6
~c
~
~
~
o
I
10
Io!l
~
I
o
/1
~
-NORMALIZED TO: IF lOrnA
TA = 25'C
~
I
....,,:
p-
g;:
I
:::J
U
a:
1.4
1.2
.."
-iA;~
1--11
~
,,'
::: 0.1 TA R' 55'C THR
8.....
.."
2~
i"'"
l00'C
~
§
..... 1-"
10
100
IF, LED FORWARD CURRENT (rnA)
1000
~0.D1
r=::::
rv
+2~:C
c- H70;c
+loo'C"'"
'-
0.5
1
2
5
10
IF, LED INPUT CURRENT (rnA)
20
50
Figure 2. Output Current versus Input Current
Figure 1. LED Forward Voltage versus Forward Current
4-35
H11B1, H11B2, H11B3
140
I
-
10
I
I
~10~A
I
'/
II ...........
!!!
aIS
5jA
v
I
I
~
2mA
~
I
~
lmA
o Y
o
10
2345678
Vee. COLLECTOR-EMITTER VOLTAGE IVOLTS)
NORMALIZED TO TA
"
.......
............
-r--
0.7
0.5
0.2
00.1
9
Figure 3. Collector Current versus
Collector-Emitter Voltage
'-
NORMALIZED TO TA = 25"C-
!z
-W
0
W
40
00
TA. AMBIENT TEMPERATURE I"C)
-20
0
W
40
00
TA. AMBIENT TEMpeRATURE I"C)
100
f--- NORMALIZED TO:
= 25"C
VCE = 10V
TA = 25"C
t=====:=:
f==
./
-
VCE = lOV
80
100
o
./
..... . /
10V
V
./
Figure 5. Collector-Emitter Voltage versus
Ambient Temperature
./
.....
v
20
40
60
TA. AMBIENT TEMPERATURE I"C)
80
100
Agure 6. Collector-Emitter Dark Current versus
Ambient Temperature
1000
1000
R~ ~ 10~
"-
100
'"
''''
10
VCC
RL
10V
1000
100
10
100
10
io
1
0.1
80
Agure 4. Output Current versus Ambient Temperature
1
-00 -40
-00 -40
0.2
0.51251020
IF. LED INPUT CURRENT ImA)
Vee
50
1
0.1
100
Figure 7. Turn-On Switching Times
0.2
0.5
1
10
IF. LED INPUT CURRENT ImA)
10V
20
Agure 8. Tum-Off Switching Times
4-36
50
100
H11B1, H11B2, H11B3
14
-IF
100
18 - 0.7 !lA
0
0.6 !lA
/"
O.SI'A
0.4 !lA
V
Ii""
w
~
U
if
0.2 !lA
<.5
6
8
10
12
14
16
18
f-l MHz
Cca
10
t3
!lA
I
4
I I
CLEO
I
'-'
z
0.3 !lA
0.1
-
u:.s.
10.01
20
0.1
VCE. COLLECTOR·EMmER VOLTAGE IVOLTSI
CEa
IIIIII
IIIII
111111
1
......
CCE
III
IIII
10
V, VOLTAGE (VOLTS)
Figure 9. DC Current Gain /Detector Only)
Figure 10. Capacitance versus Voltage
WAVEFORMS
TEST CIRCUIT
.-JI
INPUT PULSE
L
'
I
I
I
I
I
I
I
I
10%~-----1-l!----
IF = smA::-1 -+
IN~-+
90%
--:.1. ______ L_1 ____ OUTPUT PULSE
-...: : - 1,
-ro: i- If
I
11 r
I
Ion - - : : Figure 11. Switching Times
4-37
I I I
I
-->!
I I
I :-Ioff
100
H11D1*
H11D2
&·Pin DIP Optoisolators
High VQltage Transistor Output
(300 Volts)
[CTR = 20% Min]
'Motorola Preferred DevIce
STYLE 1 PLASTIC
The H11D1 and H11 02 consist of gallium arsenide infrared emitting diodes optically
coupled to high voltage, silicon, phototransistor detectors in a standard 6-pin DIP
package. They are designed for applications requiring high voltage output and are
particularly useful in copy machines and solid state relays.
Applications
• Copy Machines
• Interfacing and coupling systems of
different potentials and impedances
STANDARD THRU HOLE
CASE 730A-04
• Monitor and Detection Circuits
• Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I Symbol I
Value
Un"
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
INPUT LED
Forward Current - Continuous
IF
60
mA
Forward Current - Peak
Pulse Width = 1 118, 330 pps
IF
1.2
Amps
Po
120
1.41
mW
mW/"C
LED Power Dissipation
Derate above 25°C
@
TA = 25°C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 13OC-04
(STANDARD PROFILE)
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCER
300
Volts
Emitter-Collector Voltage
VECO
7
Vo~s
Collector-Base Voltage
VCBO
300
Vo~
IC
100
mA
Po
150
1.76
mW
mW/"C
Po
250
2.94
mW
mW/"C
Collector Current - Continuous
Detector Power DiSSipation
Derate above 25°C
@
TA = 25°C
TOTAL DEVICE
Total Device Power DiSSipation
Derate above 25°C
@
TA
=25°C
Operating Temperature Range (3)
TJ
-55 to +100
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Soldering Temperature (10 s)
TL
260
°C
VISO
7500
Vac(pk)
Isolation Surge Vo~ge
Peak ac Voltage, 60 Hz, 1 Second Duration (1)
(1) Isolation surge voltage IS an Internal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) H11D11s rated @5656Voltspeak(VISO)
H11D2 is raled @3535Voltspeak(VISO)
Otherwise they are identical, both parts built by Motorola are rated @ 7500 Volts peak (VISO)
(3) Refer to Quality and Reliability Section for test infonnation.
4-38
@
CASE 730F-04
(LOW PROFILE)
SCHEMATIC
PINI. ANODE
2. CATHODE
3. N.C.
4. EMITTER
5. COUECTOR
6. BASE
H11D1, H11D2
ELECTRICAL CHARACTER1STICS
I
Symbol
Characteristic
Min
Typ
Max
Unit
INPUT LED (TA = 25°C unless otherwise noted)
Reverse Leakage Current
(VR = 6V)
IR
-
-
10
pA
Forward Voltage
'(IF = 10 rnA)
VF
-
1.2
1.5
Volts
Capacitance
(V = 0 V, f = 1 MHz)
C
-
18
-
pF
-
-
100
250
nA
pA
-
-
300
-
-
300
7
-
-
20
-
-
7500
-
-
Volts
-
Ohms
OUTPUT TRANSISTOR (TA = 25°C and IF = 0 unless otherwise noted)
Collector-Emitter Dark Current (RBE = 1 MO)
(VCE = 200 V, TA = 25°C)
(TA = l00"C)
HllDl,2
HllDl,2
Collector-Base Breakdown Voltage
(lC = 100 pA)
Hl1Dl,2
Collector-Emitter Breakdown Voltage
(lC = 1 rnA, RBE = 1 MO)
Hl1Dl,2
ICER
Volts
V(BR)CBO
V(BR)CER
Emitter-Base Breakdown Voltage
(IE = 100 pA)
V(BR)EBO
Volts
Volts
COUPLED (TA = 250C unless otherwise noted)
Current Transfer Ratio
(VCE = 10 V, IF = 10 rnA, RBE = 1 MOl
CTR
HllDl,2.
%
Surge Isolation Voltage (Input to Output) (1)
Peak ac Voltage, 60 Hz, 1 sec
VISO
Isolation Resistance (1)
IV = 500 V)
RISO
-
1011
VCE(sat)
-
-
0.4
Volts
CISO
-
0.2
-
pF
ton
-
5
toft
-
5
Collector-Emitter Saturation Voltage
(lC = 0.5 rnA, IF = 10 rnA, RBE = 1 MOl
Isolation Capacitance (1)
(V=O,f=lMHz)
I
Turn-On Time
I
Turn-Off Time
VCC = 10 V, IC = 2 rnA, RL = 100 0
-
itS
NOTE: 1. For this test LED Pins 1 and 2 are common and phototransistor Pins 4. 5, and 6 are common.
50
-
1 20
!Z
~
::::l
10
U
I
~
L
0.5
RBE
VCE
TA
«
.s
t-
RBE = 106 0
VCE=10V
z 20
r
ll!
0:
:::>
u
t:::>
10
!3
106 0
10 V
25°C
IF
20 rnA
IF
lOrnA
0
ci:
1
9
IF
5mA
-,......
I
00.2
__
1
5
10
20
IF, LED INPUT CURRENT ImA)
50
-60
-40
-20
0
20
40
60
TA, AMBIENT TEMPERATURE 1°C)
-.
SO
100
Figure 2. Output Current versus Temperature
Figure 1. Output Current versus LED Input Current
4-39
H11D1, H11D2,
TYPICAL ELECTRICAL CHARACTERISTICS
-~~~-~~J~~ON~Y
-SomA
I
I
~ 1.8 - - - - PULSE OR DC
1
!z
II:!
~
SmA
""=><->
~
/
1.6
g
l-
=>
~
=> 0.1
0
c
~
~
T~
.P
-if
n~·Ol
0.5 1
5 10
50 100
VCE.OOUECTOR.EMnTERVOLTAGE (VOLTS)
1.4
1.2
I
~24O
.-
IF 150mA
K
--......
i=>
Figure 4. Forward Characteristics
RBE ~ lobo
VCE=10V·-
h
VCE
IF = 10 inA
/
.s
'""'-
IF = SmA
L
300 V
VCE
............
~60
1000
10
100
IF. LED FORWARD CURRENT {mAl
300
..........
~
....... 1-'"
.......
100°C
...........
<->180
120
,/
1000
.........
z
I
,/
,/
~~
Figure 3. Output Characteristics
300
I I II
I
1/
l-ti
0.1
~~
II
~
=1.0~
I
100V
./
VCE
I
. / V./
,..
RBE = 1060_
SOV
.......
.......
-60 -40
-20 0
20
40
60
T", AMBIENT TEMPERATURE lOCI
80
100
20
~
40
50
60
ro 80
TA. AMBIENT TEMPERATURE lOCI
00
~
Figure 6. Dark Current versus Temperature
Figure 5. Collector-Base Current versus Temperature
100
--
CLEO
_.GeB
--
c5
1
0.01
0.1
1
V. VOLTAGE (VOLTS)
Figure 7. Capacitance versus Voltage
4-40
'-1 MHz
I-
10
....
100
H11G1*
[eTR = 1000% Min]
H11G2*
[eTR = 1000% Min]
H11G3
6·Pin DIP Optoisolators
Darlington Output
(On·Chip Resistors)
[eTR = 200% Min]
*Motorola Preferred Devices
STYLE 1 PLASTIC
The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically
coupled to silicon photodarlington detectors which have integral base-emitter resistors.
The on-chip resistors improve higher temperature leakage characteristics. Designed with
high isolation, high CTR, high voltage and low leakage, they provide excellent
performance.
• High CTR, H11G1 & H11G2 -1000%
• High V(BR)CEQ, H11G1 -100 Volts, H11G2- 80 Volts
Applications
• Interfacing and coupling systems of
different potentials and impedances
• Phase and Feedback Controls
~
STANDARD THRU HOLE
CASE 730A-04
• General Purpose Switching Circuits
• Solid State Relays
MAXIMUM RATINGS (TA = 25"C unless otherwise noted)
I Symbol
"T" LEADFORM
WIDE SPACED 0.4"
CASE 730D-05
Value
Unit
VR
6
Volts
IF
60
mA
Forward Current - Peak
Pulse Width = 300 fls. 2% Duly Cycle
IF
3
Amps
LED Power Dissipation @ TA = 25"C
Derate above 25"C
PD
120
1.41
mW
mwrc
Rating
INPUT LED
Reverse Voltage
Forward Current -
Continuous
OUTPUT DETECTOR
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -
Continuous
Detector Power Dissipation
Derate above 25"C
Volts
VCEO
H11G1
H11G2
H11G3
@
TA = 25"C
"S"I"F" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
@
CASE 730F-04
(LOW PROFILE)
100
80
55
VEBO
7
IC
150
mA
PD
150
1.76
mW
mwrc
250
2.94
mW
mwrc
Volts
SCHEMATIC
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25"C
Derate above 25"C
Operating Junction Temperature Range (2)
PD
TA
-55 to +100
"C
Storage Temperature Range
Tstg
-55 to +150
"C
Soldering Temperature (10 s)
TL
260
"C
VISO
7500
Vac(pk)
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
(1) Isolation surge voltage IS an Internal deVice dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test information.
4-41
PIN1. ANODE
2. CATHODE
3. N.C.
4. EMITIER
5. COLLECTOR
6. BASE
H11G1, H11G2, H11G3
ELECTRICAL CHARACTERtjSTICS (TA = 25'C unless otherwise noted)
I
I
Characteristic
Typ
Min
Symbol
Max
Unit
INPUT LED
Reverse Leakage Current (VR
Forward Voltage IF
Capacitance (V
=
=
3 V)
= 0 V, f =
-
IR
10 rnA)
1 MHz)
0.05
10
I£A
1.1
1.5
Volts
18
-
100
80
55
-
-
100
80
55
-
-
-
7
-
-
-
-
100
5
2
-
VF
CJ
pF
DARLINGTON OUTPUT (TA = 25'C and IF = 0 unless otherwise noted)
Collector-Emitter Breakdown Voltage
(lC = 1 mA, IF = 0)
Collector-Base Breakdown Voltage
(lC = 100 pA, IF = 0)
Emitter-Base Breakdown Voltage (IE
Hl1Gl
Hl1G2
HllG3
=
100 pA, IF
= 0)
Capacitance (VCB
=
=
10 V, f
=
V(BR)EBO
ICE
HllGl
HllGl
HllG2
HllG2
HllG3
1 MHz)
CCB
Hl1Gl,2
HllGl,2
HllG3
Collector-Emitter Saturation Voltage
(IF = 1 rnA, IC = 1 rnA)
(IF = 16 rnA, IC = 50 rnA)
(IF = 20 rnA, IC = 50 rnA)
HllGl,2
HllGl,2
H11G3
-
100
100
100
100
100
nA
I£A
nA
I£A
nA
6
-
pF
-
-
rnA
IC
VCE(sat)
= 500 Vdc)
Isolation Capacitance (1) (V = 0 V. f =
SWITCHING (TA = 25'C)
Volts
-
0.75
0.85
0.85
-
1 MHz)
-
7500
VISO
-
Isolation Resistance (1) (V
(IF
-
-
Isolation Surge Voltage (1,2) (60 Hz ac Peak, 1 Second)
Turn-Off Time
Volts
25'C unless otherwise noted)
Collector Output Current
(VCE = 1 V, IF = 10 rnA)
(VCE = 5 V, IF = 1 rnA)
(VCE = 5 V, IF = 1 rnA)
Turn-On Time
Volts
V(BR)CBO
Collector-Emitter Dark Current
(VCE = 80 V)
(VCE = 80 V, TA = BO'C)
(VCE = 60 V)
(VCE = 60 V, TA = OO'C)
(VCE = 30 V)
COUPLED (TA
Volts
V(BR)CEO
Hl1Gl
Hl1G2
HllG3
CIO
1
1
1.2
-
Volts
1011
-
Ohms
2
-
pF
= 10 rnA, VCC = 5 V, RL = 100 n,
Pulse Width .. 300 I£s, f = 30 Hz)
(1) For this test LED Pins 1 and 2 are common and Photodarlington Pins 4 and 5 are common.
(2) Isolation Surge Voltage, Visa. is an internal device dielectric breakdown rating.
100
100
1
0
NORMALIZED TO:
SV
VeE
1 mA (300 I£s PULSES)
IF
IF
50mA=
IF
SmA===:
IF
lmA=
IFI
0.5:mA=
NORMALIZED TO:
25'C
TA
IF - 1 mA (300 J.LS PULSES)
VCE = 5 V
1
1
0.01
0.1
10
100
IF. IRED INPUT CURRENT (mA)
1000
Figure 1. Output Current versus Input Current
o. 1
-00
-~
-w
w
0
~
00
00
TA. AMBIENT TEMPERATURE ('C)
~
100
m
Figure 2. Output Current versus Temperature
4-42
~
H11G1, H11G2, H11G3
100m~~m
IF
~
il!
a
~
a
0
IF
lOmA
~ 1.8 r - - - - PULSE OR DC
IF
2mA
~
IF
':::;
0.5 mA
o
~
~
=
9
0.01
0.2
1
10
rTA ~ -55°C
.i~
.ff 1.2
1 HI
20
,.~
10
100
1000
Figure 4. LED Forward Characteristics
0
80 V-r--,
/
VCE
10 k
~ f= ~L
IV
a
100
10
:;.--
w
~
-
V
:.--
/""
1000=
RL
RL
lkU
\
I\.
1
./
./
.§
lOU
\
VCE -30V
1000
1
1/
IF, LED FORWARD CURRENT (mA)
100 k
'"
1!i
I
10-'
~
1
Figure 3. Output Current versus Collector-Emitter
Voltage
~
I-""
::H-
100"C
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
il!
,.
,.
~ 1.4
NORMALIZED TO:
:;
TA 25°C
~
IF 1 mA (300 p.s PULSES)~
VCE 5V
/1,
II
/
~ 1.6
1 mA
0.1
1
I 1
w
1
IF
a
z
r-~~~-~~LVJ ONtv
50 mA
./
VCE
~
r- NORMALIZED TO:
r- IF ~ 10mA
10V_
r
RL ~ 100 OHMS
......
\.
I- VCC~5V
30
~
~
80
M
TA, AMBIENT TEMPERATURE (OC)
80
80
0.1
0.1
m
10
1
ton
+ toff' TOTAL SWITCHING SPEED (NORMALIZED)
Figure 6. Input Current versus Total Switching Speed
Figure 5. Collector-Emitter Dark Current versus
Temperature
INTERFACING TTL OR CMOS LOGIC TO 50-VOLT, 1000-0HMS RELAY
FOR TELEPHONY APPLICATIONS
In order to interface positive logic to negative-powered electromechanical relays, a change in voltage level and
polarity plus electrical isolation are required. The H11Gx can provide this interface and eliminate the external amplifiers
and voltage divider networks previously required. The circuit below shows a typical approach for the interface.
VDD
TOl
H11Gx
-50V
4-43
H11L1*
[IF(on) = 1.6 mA Maxi
H11L2
&·Pin DIP Optoisolators
Logic Output
[IF(on) ~ 10 mA Maxi
'Motorola Preferred Device
STYLE 5 PLASTIC
The H11L1 and H11L2 have a gallium arsenide IRED optically coupled to a high-speed
integrated detector with Schmitt trigger output. Designed for applications requiring
electrical isolation, fast response time, noise immunity and digital logic compatibility.
• Guaranteed Switching limes -Ion, loft < 4 IJ.S
• Built-In On/Off Threshold Hysteresis
• High Data Rate, 1 MHz Typical (NRZ)
• Wide Supply Voltage Capability
• Microprocessor Compatible Drive
Applications
• Interfacing Computer Terminals to
Peripheral Equipment
• Digital Control of Power Supplies
• Line Receiver - Eliminates Noise
• Digital Control of Motors and Other
Servo Machine Applications
• Logic to Logid Isolator
• Logic Level Shifter - Couples TTL to CMOS
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I Symbol
Value
Unit
STANDARD THRU HOLE
CASE 730A-Q4
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
INPUT LED
Reverse Voltage
VR
6
Volts
Forward Current - Continuous
-Peak
Pulse Width =300 11S, 2% Duty Cycle
IF
60
1.2
mA
Amp
PD
120
1.41
mW
mwrc
Output Voltage Range
Vo
0-16
Volts
Supply Voltage Range
VCC
3-16
Volts
10
50
mA
PD
150
1.76
mW
mwrc
PD
250
2.94
mW
mwrc
LED Power Dissipation
Derate above 25°C
@
TA =25°C
OUTPUT DETECTOR
Output Current
Detector Power Dissipation
Derate above 25°C
@
TA = 25°C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
CASE 730F-04
(LOW PROFILE)
SCHEMATIC
TOTAL DEVICE
Total Device Dissipation
Derate above 25°C
@
TA = 25°C
Maximum Operating Temperature (2)
TA
-4010 +65
°c
Storage Temperature Range
Tstg
-55 to +150
°c
Soldering Temperature (10 s)
TL
260
°c
VISO
7500
Volts
Isolation Surge Voltage
(Pk ac Voltage, 60 Hz, 1 Second Duration) (1)
PIN 1. ANODE
2. CATHODE
3. VD
4. GROUND
5. Vee
(1) Isolation surge voltage Is an Internal device dlelectnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and RetlablUty Sectton for test Information.
4-44
H11L1, H11L2
= 0 to 70"C)
ELECTRICAL CHARACTERISTICS (TA
I
Characteristic
Symbol
Min
Typ
IR
-
0.05
10
pA
1.2
0.95
1.5
Volts
Max
Unit
INPUT LED
= 3 V,
= 10 mAl
= 0.3 mAl
= 0 V, f = 1 MHz)
Reverse Leakage Current (VR
RL
=
1 M(l)
Forward Voltage (IF
(IF
VF
Capacitance (VR
C
-
18
-
3
-
0.75
pF
OUTPUT DETECTOR
Operating Voltage
15
Volts
ICC(off)
-
1
5
mA
IOH
-
-
100
pA
ICC(on)
-
VCC
= 0, VCC = 5 V)
Output Current, High (IF = 0, VCC = Vo =
Supply Current (IF
,
15 V)
COUPLED
Supply Current (IF
=
= 5 V)
= 270 n, VCC = 5 V,
IF(on), VCC
1.6
5
mA
0.2
0.4
Volts
1
1.6
10
mA
Threshold Current, ON
(RL = 270 n, VCC = 5 V)
HllLl
HllL2
IF(on)
-
Threshold Current, OFF
(RL = 270 n, VCC = 5 V)
HllLl
HllL2
IF(off)
0.3
0.3
0.75
IFloff)
IF(on)
0.5
0.75
VI SO
7500
Output Voltage, Low (RL
Hysteresis Ratio (RL
IF
=
Fall Time
Turn-Off Time
Rise Time
VOL
= 270 n, VCC = 5 V)
Isolation Voltage (1) 60 Hz, AC Peak, 1 second, TA
Turn-On Time
IF(on))
= 25"C
RL = 270n
VCC = 5V,
IF = IF(on)
TA = 25"C
4
tf
-
0.1
-
toff
-
1.2
4
tr
-
0.1
-
~=r==L
I
I
I
L
I
-I loff
I
r--
I
I
I
~--+---f
I
I
I
I
t--I,
Figure 1. Switching Test Circuit
4-45
0.9
-
Vin
mA
-
1.2
I, = If = 0.01 1'"
Z = 50 n 0 - - - - - . . . . 1
Ion
-
-
ICC
~
-
ton
(1) For this test IRED Pins 1 and 2 are common and Output Gate Pins 4,5,6 are common.
----t-o
-
Vac(pk)
p.S
H11L1, H11L2
TYPICAL CHARACTERISTICS
VOH
,
IF(oll)
IF(on)
RL = 270n
vee = 5V TA = 25°C
VOL
o
o
0.75
IF. INPUT CURRENT (mA)
Figure 2. Transfer Characteristics for H11L1
il'!
o
~
TGRN
1. 2
!Z
~
:::>
~
a:
0
~N ~RJSHOlD
~
u
V
~ 0.8
il5
~ 0.6
V
O. 4
""
1.4
tlj
~
TURN OFF ~HR~SH~LD
ill"
IF NORMALIZED TO IFlon) AT Vee = 5 V TA = 25°C
-,I' 1
6
8
10
12
14
Vcc. SUPPLY VOLTAGE (VOLTS)
0-
1.2
"
~
,/
0.8
0.6
~
........
/
NORMALIZED TO
Vce = 5 V
TA = 25°C
~
~
if:
-50
Figure 3. Threshold Current versus Supply Voltage
-25
o
25
50
TA. TEMPERATURE (OC)
75
I
~
!:;
TA = OOC
25°C
70"C ....
' ....
o. 5
~
~
/
O.2
O. 1
5
,
.,.:; ~-- ...-,~ ~~- --
0.05
V
~ 0.02
>
5
10
20
10. LOAD CURRENT (mA)
50
100
Figure 5. Output Voltage, Low versus Load Current
o
o
~- --
-
...~ .........
IF = 0 mA
-
~
~
...... /
IF = 5 mA
§1
§
100
Figure 4. Threshold Current versus Temperature
1
!3
/
/'
a:
:::>
u
~
/
1.6
0-
~
1
.!f
c
I I
I I
Ii
@ 1.6
~ 1.4
f--'ooe
250C
.
-
6
8
10
12
Vee. SUPPLY VOLTAGE (VOLTS)
~£~ ~
- f.-"14
Figure 6. Supply Current versus Supply Voltage
4-46
16
MCT2
MCT2E
&·Pin DIP Optoisolators
Transistor Output
[CTR = 20% Min]
STYLE 1 PLASTIC
The MCT and MCT2E devices consist of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of
different potentials and impedances
• 110 Interfacing
• Solid State Relays
• Monitor and Detection Circuits
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I
Symbol
Value
STANDARD THRU HOLE
CASE 730A-()4
Unit
INPUT LED
Reverse Voltage
Forward Current -
Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
Volts
VR
3
IF
60
rnA
Po
120
mW
1.41
mWFC
30
Volts
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCEO
Emitter-Collector Voltage
VECO
7
Volts
Collector-Base Voltage
VCBO
70
Volts
IC
150
rnA
Po
150
mW
1.76
mW/oC
VISO
7500
Vac
Po
250
2.94
mW
mWFC
Collector Current -
Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
~
"T" LEADFORM
WIDE SPACED 0.4"
CASE 730D-05
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-()4
(STANDARD PROFILE)
~
CASE 730F-04
(LOW PROFILE)
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Ambient Operating Temperature Range (2)
Storage Temperature Range
Soldering Temperature (10 sec, 1/16" from case)
SCHEMATIC
TA
-55 to +100
°C
Tstg
-55 to +150
°C
TL
260
°c
(1) Isolation surge voltage IS an tnlemal devICe dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
'0---.,
20-3\
3D-PIN 1.
2.
3.
4.
5.
6.
(2) Refer to Quality and Reliability Section for test information.
4-47
G6
5
4
LED ANODE
LED CATHODE
N.C.
EMITIER
COLLECTOR
BASE
MCT2, MCT2E
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)
I
Min
Symbol
Characteristic
Typ
Max
Unit
1.23
1.35
1.15
1.5
Volts
0.01
10
p.A
18
-
pF
1
1
-
nA
p.A
0.2
100
-
20
nA
INPUT LED
Forward Voltage (IF
= 20 mAl
TA
TA
TA
= 25"C
= -55"C
= 100"C
-
VF
= 3 V)
= 0 V, f = 1 MHz)
Reverse Leakage Current (VR
IR
Capacitance (V
CJ
-
OUTPUT TRANSISTOR
Collector-Emitter Dark Current (VCE
Collector-Base Dark Current (VCB
=
=
10 V)
TA
TA
10 V)
=
Collector-Emitter Breakdown Voltage (lC
Collector-Base Breakdown Voltage (lC
=
Emitter-Collector Breakdown Voltage (IE
TA
TA
= 25"C
= 100"C
= 25"C
= 100"C
-
ICEO
ICBO
1 rnA)
50
-
V(BR)CEO
30
45
10 p.A)
V(BR)CBO
70
100
=
V(BR)ECO
7
7.8
hFE
-
500
-
CCE
-
7
-
pF
CcB
-
19
-
pF
CEB
-
9
-
pF
100 p.A)
= 5 rnA, VCE = 5 V)
Collector-Emitter Capacitance (f = 1 MHz, VCE = 0 V)
Collector-Base Capacitance (f = 1 MHz, VCB = 0 V)
Emitter-Base Capacitance (f = 1 MHz, VEB = 0 V)
DC Current Gain (lC
Volts
Volts
Volts
-
COUPLED
Output Collector Current (IF
=
=
10 rnA, VCE
=
7
-
rnA
VCE(sat)
-
0.19
0.4
Volts
ton
-
2.8
10 V)
2
IC
= 16 rnA)
Turn-On Time (IF = 10 rnA, VCC = 10 V, RL = 100 n, Figure 11)
Turn-Off TIme (IF = 10 rnA, VCC = 10 V, RL = 100 n, Figure 11)
Rise Time (IF = 10 rnA. VCC = 10 V, RL = 100 n, Figure 11)
Fall TIme (IF = 10 rnA, VCC = 10 V, RL = 100 n, Figure 11)
Collector-Emitter Saturation Voltage (lC
2 rnA, IF
-
toff
tr
If
Isolation Voltage (f = 60 Hz, t = 1 sec)
VIsa
7500
Isolation Resistance (V = 500 V)
RISO
1011
Isolation Capacitance (V = 0 V, f = 1 MHz)
CISO
-
4.5
1.2
1.3
-
0.2
-
p.s
p.s
p.s
-
Vac(pk)
-
pF
p.s
n
TYPICAL CHARACTERISTICS
I
~ 1.8
~
I
I
!l!!:i 1.6
g
..,.
..,.
~ 1.4
i
--,-
~1.2
1
Tt=~
-
'I
1
Nt100"C
.....
~
I
- - - - - PULSE'6'NLY
- - - PULSE OR DC
i=
r-
~
,"
!Z
~
NORMALIZED 1'0:
IF 10mA
.....
a
",
~_
o. 1
8
I
.... 1-"
10
100
IF, LED FORWARD CURRENT (mAl
10
,
1000
.Y
0.01
0.51251020
IF, LED INPUT CURRENT (mAl
50
Figure 2. Output Current versus Input Current
Figure 1, LED Forward Voltage versus Forward Current
4-48
MCT2, MCT2E
28
1
-r-
.......- ~=10~A-
24
NORMALIZED TO TA
V
./
/
1/
25°C-
~
v
5mA-
...-
I V
2mAlmA-
/I
o
o
2345678
VCE. COLLECTOR-EMITIER VOLTAGE (VOLTS I
1
10
-00
-40 -W
W
40
00
100
80
TA. AMBIENT TEMPERATURE (OCI
Figure 3. Collector Current versus
Collector-Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
100
~NORMALIZED TO:
10 V
~ VCE
25°C
~ TA
50
VCC
10V
20
RL
0
EVCE
.,-
I
If
1000
30 V
r--r---
/'
RL
100!
I,
~
~
~ ~10V
I
20
40
80
60
TA. AMBIENT TEMPERATURE lOCI
1
0.1
100
0.2
Figure 5. Dark Current versus Ambient Temperature
1
5
10
IF. LED INPUT CURRENT (mAl
100
70
50
VCC--l0V
50
0.5
I'
20
50
100
Figure 6. Rise and Fall Times
100
70
Vcc
10V
V
~N:
0
-"'-
If
~L = 1000
V
100
5
"I"
~
2
I
0.1
0.2
100
5
10
"~
0.5 0.7 I
2
5 7 10
20
IF. LED INPUT CURRENT (mAl
-10
2
1
0.1
50 70100
Figure 7. Turn-On Switching Times
0.2
5 7 10
0.50.7 1
IF. LED INPUT CURRENT (mAl
20
Figure 8. Turn-Off Switching Times
4-49
50 70100
MCT2, MCT2E
20
IF = 0
18
f
V
7pA
18
6pA
16
5pA
,e,
~ 12
4pA
;5 10
Ii:
3pA
CL~O
~
CCB'
14
I
I
§8
CeB
u 6
Cce
2
lpA
18
.....
"
o
0.05
20
0.1
Figure 9. DC Current Gain (Detector Onlyl
0.2
.....
r-
T
2pA
4
6
8
10
12
14
16
VCE. COLLECTOR·EMlmR VOLTAGE (VOLTS)
f = 1 MHz
:::".
I
I
0::::::
0.5
1
2
5
V. VOLTAGE (VOLTS)
10
20
Figure 10. Capacitances versus Voltage
WAVEFORMS
TEST CIRCUIT
INPUT PULSE
L
;
-.JI
I
IF = 10 mA
::--1
I
I
111
'I
I I
I
: I
]A -----i-Z---9O%--'-h------ - -1---I
-+
I
OUTPUT PULSE
10%
IN~-+
.....: '+-t,
I
r
Ion ~:+Figure 11. Switching Times
4-50
~ :+-tf
~
I : - - toll
50
MOC119
&·Pin DIP Optoisolator
Darlington Output
(No Base Connection)
(CTR = 300% Min]
STYLE 3 PLASTIC
The MOC119 device consists of a gallium arsenide infrared emitting diode optically
coupled to a monolithic silicon photodarlington detector.
It is designed for use in applications requiring high sensitivity at low input currents.
• No Base Connection for Improved Noise Immunity
• High Sensitivity to Low Input Drive Current
Applications
• Appliance, Measuring Instruments
• Interfacing and coupling systems of
different potentials and impedances
• Monitor and Detection Circuits
•
•
•
•
STANDARD THRU HOLE
CASE 730A-04
I/O Interfaces for Computers
Solid State Relays
Portable Electronics
Programmable Controllers
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I Symbol
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
Value
Unit
VR
3
Volts
IF
60
mA
Po
t20
mW
1.41
mWfOC
INPUT LED
Reverse Voltage
Forward Current -
Continuous
=
LED Power DiSSipation @ TA 25°C
with Negligible Power in Output Detector
Derate above 25°C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-114
(STANDARD PROFILE)
OUTPUT DETECTOR
Collector-Emitter Voltage
VCEO
30
Volts
Emitter-Collector Voltage
VECO
7
Volts
Po
150
mW
1.76
mW/oC
VIsa
7500
Vac
Po
250
2.94
mW
mW/oC
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
CASE 730F-04
(LOW PROFILE)
SCHEMATIC
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Ambient Operating Temperature Range (2)
Storage Temperature Range
Soldering Temperature (10 sec, 1/16" from case)
1
TA
-55 to +100
°C
Tstg
-55 to +150
°C
TL
260
°C
(1) [solation surge voltage IS an Internal deVice dlelectnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test Infonnation.
4-51
0----.,
-06
20--1 \ --r-;:ro 5
3D-
"i-..a4
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITIER
5. COLLECTOR
6. N.C.
MOC119
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
I
I
Characteristic
Symbol
Min
Typ
Max
Unit
INPUT LED
Reverl\l! Leakage Current
(VR= 3V)
IR
-
0.05
100
pA
Forward Voltage
(IF = lOrnA)
VF
-
1.15
1.5
Volts
Capacitance
(VR = 0 V, f = 1 MHz)
C
-
18
-
pF
ICEO
-
-
100
nA
PHOTDlRANSISTOR (TA = 25'C and IF = 0 unless otherwise noted)
Collector-Emitter Dark Current
(VCE = 10 V)
Collector-Emitter Breakdown Voltage
(lC = lOOpA)
V(BR)CEO
30
-
-
Volts
Emitter-Collector Breakdown Voltage
(lE=lOpA)
V(BR)ECO
7
-
-
Volts
IC
30
45
-
mA
Isolation Surge Voltage (2, 5), 60 Hz ac Peak, 1 Second
VISO
7500
-
-
Volts
Isolation Resistance (2)
(V = 500 V)
RISO
-
1011
-
Ohms
VCE(sat)
-
-
1
Volt
CISO
-
0.2
-
pF
3.5
-
fl.s
95
-
1
-
COUPLED (TA = 25'C unless otherwise noted)
Collector Output Current (1)
(VCE = 2 V, IF = 10 mAl
Collector-Emitter Saturation Voltage (1)
(lC = 10 mA, IF = 10 mAl
Isolation Capacitance (2)
(V = OV,f = 1 MHz)
SWITCHING (Figures 4, 5)
Turn-On Time
ton
Turn-Off Time
toff
VCE = 10 V, RL = 100 n, IF = 5 mA
Rise Time
-
-
tr
Fall Time
tf
2
(11 Puis. Test: Puis. Width = 300 p.s, Duty Cycl. '" 2%.
(2) For this test LED Pins 1 and 2 are common and Phototransistor Pins 4 and 5 are common.
(3) Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
TYPICAL CHARACTERISTICS
r-~~_I_I~JJ~~ON~yl
~ 1.8 r----PULSE OR DC
w
~ 1.6
~
~
~
-TA = -55'C
1.2
i"J. .8:t
I"
,-11
~
'OO'C
~
;
V
V
/ ,/
!Z
~
V
~8::::
IF
TA
10mA
25'C
~
a
1/
I
..... ~
100
r- NORMALIZED TO:
~
V
10
10
o
ll/I
g
~
c
~ 1.4
5
I
I I
'000
IF, LED FORWARD CURRENT (mA)
0.'
9 0.01
55'CTHR
TA
E==/+25'C
or
f-- -t 7o;C
I-- +100·C....
0.5
1
2
5
10
IF, LED INPUT CURRENT (mA)
20
50
Figure 2. Output Current versus Input Current
Figure 1. LED Forward Voltage versus Forward Current
4-52
MOC119
140
I
120
<
Ia
5 'j'A
al5
V
2mA
8....
~
I
0.7
.... 5
~ o.
~ o. 2
1 mA
o y
o
= 25"C-
....
v
20
NORMALIZED TO TA
I
J
I
II ...- r-
I:
l5
;;;
I
80
0
~
~10~A
/'"
5100
I
00. I
9
10
2345678
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTSI
-60 -40
Figure 3. Collector Current versus
Collector-Emitter Voltage
-20
0
20
40
60
TA. AMBIENT TEMPERATURE (OC)
80
100
Figure 4. Output Current versus Ambient Temperature
s
~
~ 1.3
iii!
............
~ 1.1
~
g
1
~
0.9
~
I - - NORMALIZED TO:
NORMALIZED TO TA = 25°C
I.........
~ 1.2
......
F=
VCE = 10 V
TA = 25°C
f=
./
............
--
VCE = 30V
'-
r--
~ 0.8
../
~ 0.7
~
-so
I
-40
-W
0
W 40
80
TAo AMBIENT TEMPERATURE lOCI
80
100
o
Figure 5. Collector-Emitter Voltage versus
Ambient Temperature
./
/
10V
v
/
v
20
40
60
TA. AMBIENT TEMPERATURE (OC)
100
80
Figure 6. Collector-Emitter Dark Current versus
Ambient Temperature
1000
1000
R~ ~ lObo
100
"
10
"'
"'
VCC
RL
10 V
]:
100
100
~
10
;:::
100
1000
10
VCC
;0
I
10V
I
0.1
0.2
0.5
I
2
5
10
IF. LED INPUT CURRENT (mAl
20
50
100
0.1
Figure 7. Turn-On Switching Times
0.2
0.5
I
5
10
IF. LED INPUT CURRENT (mA)
20
Figure 8. Turn-Off Switching Times
4-53
50
100
MOC119
WAVEFORMS
TEST CIRCUIT
l-
-.JI
I
I
IF = 5 rnA
I
::--1
INPUT PULSE
I
I
:
I
10%~-----I-li----
90%--1.1- -----1-1----
IN::J :::
\ II
-...: '+-1
I:
Ion --::Figure 9. Switching Times
4-54
r
I I I
~ :+-If
I I I
~: :-1011
OUTPUT PULSE
MOC3009
[1FT 30 rnA Max)
MOC3010*
15 rnA Max)
MOC3011
[1FT 10 rnA Max)
MOC3012*
[1FT 5 rnA Max)
~
&·Pin DIP Optoisolators
Triac Driver Output (250 Volts)
[IFT~
~
The MOC3009 Series consists of gallium arsenide infrared emitting diodes, optically
coupled to silicon bilateral switch and are designed for applications requiring isolated triac
triggering, low-current isolated ac switching, high electrical isolation (to 7500 V peak), high
detector standoff voltage, small size, and low cost.
Applications
• SolenoidNalve Controls
• Lamp Ballasts
• Interfacing Microprocessors to 115 Vac Peripherals
• Motor Controls
MAXIMUM RATINGS (TA ~ 25'C unless otherwise noted)
I
Rating
~
"Motorola Preferred Devices
STYLE 6 PLASTIC
• Static ac Power Switch
• Solid State Relays
• Incandescent Lamp Dimmers
STANDARD THRU HOLE
CASE 730A-04
I
Symbol
Value
Unit
VR
3
Volts
~
INFRARED EMITTING DIODE
Reverse Voltage
Forward Current- Continuous
IF
60
rnA
Total Power Dissipation @ TA ~ 25'C
Negligible Power in Transistor
Derate above 25'C
Po
100
mW
1.33
mW/,C
VDRM
250
Volis
ITSM
1
A
Po
300
4
mW
mW/,C
VISO
7500
Vae
Total Power Dissipation @ TA ~ 25'C
Derate above 25'C
Po
330
4.4
mW
mW/,C
Junction Temperature Range
TJ
-40 to +100
'C
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
OUTPUT DRIVER
Off-State Output Terminal Voltage
Peak Repetitive Surge Current
(PW ~ 1 ms, 120 pps)
Total Power Dissipation @ TA
Derate above 25'C
~
25'C
"S"'''F'' LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ae Voltage, 60 Hz, 5 Second Duration)
TA
-40 to +85
'C
Storage Temperature Range
Tstg
-40 to +150
'C
Soldering Temperature (10 s)
TL
260
'C
Ambient Operating Temperature Range (2)
CASE 730F-04
(LOW PROFILE)
COUPLER SCHEMATIC
(1) Isolation surge voltage. VISQ. IS an Intemal device dielectriC breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test infonnation.
1. ANODE
2.
3.
4.
5.
CATHODE
NC
MAIN TERMINAL
SUBSTRATE
DO NOT CONNECT
6. MAIN TERMINAL
4-55
MOC3009, MOC3010, MOC3011, MOC3012
ELECTRICAL CHARACTERISTICS (TA = 2S·C unless otherwise noted)
I
I
Characteristic
Min
Symbol
Typ
Max
Unit
INPUT LED
Reverse Leakage Current
(VR = 3V)
IR
-
0.05
100
pA
Forward Voltage
(IF = 10mA)
VF
-
1.15
1.5
Volts
Peak Blocking Current, Either Direction
(Rated VDRM, Note 1)
IDRM
-
10
100
nA
Peak On-State Voltage, Either Direction
(lTM = 100 mA Peak)
VTM
-
1.8
3
Volts
Critical Rate of Rise of Off-State Voltage (Figure 7, Note 2)
dv/dt
-
10
-
V/p.s
-
-
15
8
5
3
30
15
10
5
-
100
-
load~driving
thyristor(s) only.
OUTPUT DETECTOR (IF = 0 unless otherwise noted)
COUPLED
LED Trigger Current, Current Required to Latch Output
(Main Terminal Voltage = 3 V, Note 3)
MOC3009
MOC3010
MOC3011
MOC3012
1FT
Holding Current, Either Direction
IH
mA
Notes: 1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 7 for test circuit. Com mutating dv/dt is a function of the
pA
3. All devices are guaranteed to trigger at an IF value less than or equal to max 'FT. Therefore, recommended operating IF lies between max
1FT 130 mA for MOC3009, 15 mA for MOC3010, 10 mA for MOC3011, 5 mA for MOC3012) and absolute max IF 160 mAIo
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25°C
u; 1.8
!:;
~
~
>
0
/
/1
1.6
0
~
1.4
f2
2
a:
-!f 1.
TA = -40·
H!25·C
1HiS50C
V
I-" ...... V
f--""" ...... V
v
Ii I
- - - - - PULSE ONLY
1----- PULSE OR DC
0
'"~
+800
II !III
II illl
/
/ /
/
;
V
V
,/
0
/
/
0
/
V
10
100
IF, LED FORWARD CURRENT ImAI
L
-80o
1000
Figure 1. LED Forward Voltage versus Forward Current
/
-3
-2
-1
0
1
VTM, ON-STATE VOLTAGE (VOLTSI
Figure 2. On-State Characteristics
4-56
MOC3009, MOC3010, MOC3011, MOC3012
1,5
5
1.3
-- -
t;:
;; 1, 1
~
-
...... r-..
5 \
r-.. -....
.......
oill! 0,9
z
-w
-40
W
0
U
M
\
0
......
0.7
0,5
NORMALIZED TO:
PWin'" 100 p.s
0
-....
\
"-
5
""- ......
o
1
100
80
10
10
PWino LED TRIGGER PULSE WIDTH Ip.')
TAo AMBIENT TEMPERATURE 1°C)
Figure 3. Trigger Current versus Temperature
1
8
I'..
"-
STATIC
0
-
........
!o......
........
TEST CIRCUIT IN FIGURE 7
6
4
......
1
15 30
f--
8
4
0
1
........
6
U
W
M
m
~
90
1
0,4
100
TAo AMBIENT TEMPERATURE 1°C)
I
I
I
I
I
I
1'1
1.2
1.6
Figure 6. dv/dt versus Load Resistance
R = 10 k!l
1. The mercury wetted relay provides a high speed repeated pulse to
the D,U,T,
2. 100x scope probes are used, to allow high speeds and voltages.
CTEST
PULSE
INPUT
0,8
RLo LOAD RESISTANCE (k!!)
Figure 5. dv/dt versus Temperature
+150
Vdc
100
Figure 4. LED Current Required to Trigger versus
LED Pulse Width
I I
- - STATiC dvldt
CIRCUIT IN FIGURE 7
0"
50
3. The worst-case condition for static dv/dt is established by triggering
MERCURY
WEffiD
RELAY
APPLIED VOLTAGE
WAVEFORM--
the D.U.T. with a normal LED input current, then removing the
current. The variable AlEST allows the dv/dt to be gradually
increased until the O.U.T. continues to trigger in response to the
applied voltage pulse, even after the LED current has been removed.
The dv/dt is then decreased until the D.U.T. stops triggering. TRC is
measured at this point and recorded.
Xl00
SCOPE
PROBE
Vmax =2WV
158 V
.""~- -- ~;;,,----- --- ---
dvldt
=
0,63 Vmax
1JlC
=~
Figure 7. Static dv/dt Test Circuit
4-57
1JlC
MOC3009, MOC3010, MOC3011, MOC3012
TYPICAL APPLICATION CIRCUITS
Note: This optoisolator should not be used to drive a load directly. It is
intended to be a trigger device only. Additional informs,tion on
the use of the MOC3009/3010/3011/3012 is available in
Application Note AN-780A.
Vee
180
Rin
M0C3009
M0C3010
M0C3011
M0C3012
160
120V
60Hz
MOC3009
M0C3010
M0C3011
M0C3012
Figure 8. Resistive Load
2.4 k
120 V
60 Hz
0.1 p.F
C1
Figure 9. Inductive Load with Sensitive Gate Triac
(lGT';;; 15 mAl
160
M0C3009
MOC3010
M0C3011
M0C3012
1.2k
120 V
60Hz
Figure 10. Inductive Load with Non-Sensitive Gate Triac
(15 mA < IGT < 50 mAl
4-58
MOC3020
[1FT = 30 mA Max]
&·Pin DIP Optoisolators
Triac Driver Output (400 Volts)
The MOC3020 Series consists of gallium arsenide infrared emitting diodes, optically
coupled to a silicon bilateral switch.
They are designed for applications requiring isolated triac triggering.
MOC3021*
= 15
MOC3022
=
MOC3023
[1FT
mA Max]
[1FT
10 mA Max]
[1FT = 5 mA Max]
*Motorola Preferred Device
STYLE 6 PLASTIC
• Output Driver Designed for 240 Vac Line
Applications
• SolenoidNalve Controls
• Lamp Ballasts
• Interfacing Microprocessors to 115 Vac Peripherals
• Motor Controls
MAXIMUM RATINGS (TA
I
= 25°C unless otherwise noted)
Rating
• Static ac Power Switch
• Solid State Relays
• Incandescent Lamp Dimmers
STANDARD THRU HOLE
CASE 730A-04
I Symbol I
Value
~
Unit
INFRARED EMITTING DIODE
VR
3
IF
60
rnA
Po
100
mW
1.33
mWrC
VDRM
400
Volts
ITSM
1
A
Po
300
4
mW
mWrC
VISO
7500
Vac
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Po
330
4.4
mW
mWrC
Junction Temperature Range
TJ
-40 to +100
°c
Reverse Voltage
Forward Current -
Continuous
Total Power Dissipation @ TA = 25°C
Negligible Power in Triac Driver
Derate above 25°C
Volts
OUTPUT DRIVER
Oil-State Output Tenninal Voltage
Peak Repetitive Surge Current
(PW = 1 ms, 120 pps)
Total Power DisSipation @ TA = 25°C
Derate above 25°C
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 73OC-04
(STANDARD PROFILE)
@
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 5 Second Duration)
CASE 730F-D4
(LOW PROFILE)
COUPLER SCHEMATIC
Ambient Operating Temperature Range (2)
TA
-40 to +85
°c
Storage Temperature Range
Tstg
-40 to +150
°c
Soldering Temperature (10 s)
TL
260
°c
(1) Isolation surge voltage, VISQ. IS an Internal device dlelectnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test information.
:3,,1::
3D 1:4
1.
2.
3.
4.
5.
ANODE
CATHODE
NC
MAIN TERMINAL
SUBSTRATE
DO NOT CONNECT
6. MAIN TERMINAL
4-59
MOC3020, MOC3021, MOC3022, MOC3023
ELECTRICAL CHARACTERISTICS (TA = 2S0C unless otherwise noted)
I
I
Characteristic
Min
Symbol
Typ
Max
Unit
0.05
100
/LA
1.16
1.5
Volts
INPUT LED
Reverse teakage Current
(VR = 3V)
IR
Forward Voltage
(IF = 10mA)
VF
-
Peak'Blocking Current, Either Direction
(Rated VDRM, Note 1)
IDRM
-
10
100
nA
Peak On-State Voltage, Either Direction
(ITM = 100 mA Peak)
VTM
-
1.8
3
Volts
Critical Rate of Rise of Off-State Voltage (Figure 7, Note 2)
dv/dt
-
10
-
VII's
= 0 unless otherwise noted)
OUTPUT DETECTOR (IF
COUPLED
LED Trigger Current, Current Required to Latch Output
(Main Terminal Voltage = 3 V, Note 3)
MOC3020
MOC3021
MOC3022
MOC3023
1FT
Holding Current, Either Direction
IH
-
mA
15
8
-
30
15
10
5
100
-
-
/LA
Notes: 1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 7 for test circuit. Com mutating dv/dt is a function of the load·driving thyristor(s) only.
3. All devices are guaranteed to trigger at an IF value less than or equal to max 'FT' Therefore. recommended operating IF lies between max
1FT (30 mA for MOC3020. 15 mA for MOC3021. 10 mA for MOC3022. 5 mA for MOC3023) and absolute max IF 160 rnA),
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25°C
2
~ 1.8
V
./
/ / I
/fo""
/
~ 1.4
2
/
/I
1,6
~1.
/
I
c
!2
J
i,
- - - - - PULSE ONLY
r-____
PULSE OR DC
~
~
+800
II III
II III
....
TA =-4O"C
Hl2SoCj.
lH!85°C
1
~
~/
J
..........
,......
,...... ......
10
100
IF. LED FORWARD CURRENT (rnA)
J
1000
Figure 1. LED Forward Voltage versus Forward Current
-800
-3
-2
-1
0
1
VTM. ON-STATE VOLTAGE (VOLTS)
Figure 2. On-State Characteristics
MOC3020, MOC3021, MOC3022, MOC3023
1, 4
5
c
~ 1. 3
.......
~ 1.2
"'"
:sz
I 1. 1
....
l!j
1
'"~
0.9
.........
I'-...
.........
-- -
r--..
r-
g
~ 0,8
J;:O 7
0, 6
-40
\
\
0
I\.,
I"'-
""
5
0
o
20
40
60
TA. AMBIENT TEMPERATURE lOCI
-20
5 \
80
10
20
PWin. LED TRIGGER PULSE WIDTH I/Lsi
100
Figure 3. Trigger Current versus Temperature
100
2
- - STATIC dVidt '-CIRCUIT IN FIGURE 7
0"
"'"
STATIC
0
.......
TEST CIRCUIT IN FIGURE 7
8
.......,
6
........
6
........
4
r--
........
2
4
......
0
2
25 30
~
40
M
M
~
90
0.4
100
TA. AMBIENT TEMPERATURE lOCI
Figure 5. dv/dt versus Temperature
+ 400
50
Figure 4. LED Current Required to Trigger versus
LED Pulse Width
2
8
NORMALIZED TO:
PWin ;;;.100 /Ls
0
0,8
1.2
RL. LOAD RESISTANCE Iknl
1,6
Figure 6. dv/dt versus Load Resistance
n
Vdc
I
I
I
I
I
I
PULSE
INPUT
R = 10 kn
1. The mercury wetted relay provides a high speed repeated pulse to
the D,U,T,
2. l00x scope probes are used, to allow high speeds and voltages.
3. The worst-case condition for static dv/dt is established by triggering
the D.U.T. with a normal LED input current, then removing the
current. The variable RTEST allows the dv/dt to be gradually
increased until the O.U.T. continues to trigger in response to the
applied voltage pulse, even after the LED current has been removed.
The dv/dt is then decreased until the D.U.T. stops triggering. TAC is
measured at this point and recorded.
CTEST
['I
MERCURY
WETTED
RELAY
APPLIED VOLTAGE
WAVEFORM--
Xl00
SCOPE
PROBE
- - - - - Vmax = 400 V
252 V
O"'-~- ~-;;z---- -------
dvldt = 0,63 Vmax = 252
- -
1'flC
Figure 7. Static dv/dt Test Circuit
4-61
1'flC
MOC3020, MOC3021, MOC3022, MOC3023
Vee
Ri"
MOC
3020/
30211
3022/
3023
470
360
HOT
0.051'F
GROUND
In this circuit the "hot" side of the line is switched and
the load connected to the cold or ground side.
The 39 ohm resistor and 0.01 /LF capacitor are for snubbing of the traic. and the 470 ohm resistor and 0.05 /LF
capacitor are for snubbing the coupler. These components mayor may not be necessary depending upon the
particular triac and load used.
*This optoisolator should not be used to drive a load directly. It is
intended to be a trigger device only.
Additional information on the use of optically coupled triac drivers is
available in Application Note AN-78OA.
Figure 8. Typical Application Circuit
4-62
MOC3031*
=
MOC3032
=
MOC3033
&·Pin DIP Optoisolators
Triac Driver Output (250 Volts)
• Simplifies Logic Control of 115 Vac Power
• Zero Voltage Crossing
• dv/dt of 2000 V/~s Typical, 1000 V1~s Guaranteed
•
•
•
•
15 mA Max)
[1FT
10 mA Max)
[1FT = 5 mA Max)
The MOC3031, MOC3032 and MOC3033 devices consist of gallium arsenide infrared
emitting diodes optically coupled to a monolithic silicon detector performing the function of
a Zero Voltage crossing bilateral triac driver.
They are designed for use with a triac in the interface of logic systems to equipment
powered from 115 Vac lines, such as teletypewriters, CRTs, printers, motors, solenoids
and consumer appliances, etc.
Applications
• SolenoidNalve Controls
• Lighting Controls
• Static Power Switches
• AC Motor Drives
[1FT
*Motorola Preferred Device
STYLE 6 PLASTIC
STANDARD THRU HOLE
CASE 730A-G4
Temperature Controls
E.M. Contactors
AC Motor Starters
Solid State Relays
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I Symbol
Value
Unit
3
Volts
IF
60
mA
PD
120
mW
1.41
mW/oC
VDRM
250
Volts
ITSM
1
A
CASE 730F-04
(LOW PROFILE)
PD
150
1.76
mW
mWI"C
COUPLER SCHEMATIC
7500
Vae
INFRARED LED
Reverse Voltage
Forward Current -
VR
Continuous
Total Power Dissipation @ TA = 25°C
Negligible Power in Output Driver
Derate above 25°C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-G4
(STANDARD PROFILe)
~
OUTPUT DRIVER
all-State Output Terminal Voltage
Peak Repetitive Surge Current
(PW = 100~, 120 pps)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ae Voltage, 60 Hz, 1 Second Duration)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VIsa
PD
250
mW
2.94
mWI"C
Junction Temperature Range
TJ
-40 to +100
°C
Ambient Operating Temperature Range (2)
TA
-40 to +85
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Soldering Temperature (10 s)
TL
260
°C
(1) Isolation surge voltage, VISO. IS an Intemal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for tesllnformation.
4-63
1.
2.
3.
4.
5.
ANODE
CATHODE
NC
MAIN TERMINAL
SUBSTRATE
DO NOT CONNECT
6. MAIN TERMINAL
MOC3031, MOC3032, MOC3033
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
I
I
Characteristic
Min
Symbol
Typ
Max
Unit
0.05
100
pA
1.3
1.5
Volts
INPUT LED
Reverse Leakage Current
(VR = 3V)
IR
Forward Voltage
(IF = 30 mAl
VF
-
Leakage with LED Off, Either Direction
(Rated VDRM, Note 1)
IDRMI
-
10
100
nA
Peak On-State Voltage, Either Direction
(lTM = 100 mA Peak)
VTM
-
1.8
3
Volts
Critical Rate of Rise of Off-State Voltage
dvldt
1000
2000
-
V/,.s
-
-
-
15
10
5
-
100
-
pA
-
-
Vac(pk)
OUTPUT DETECTOR (IF = 0 unless otherwise noted)
COUPLED
LED Trigger Current, Current Required to Latch Output
MOC3031
(Main Terminal Voltage = 3 V, Note 2)
MOC3032
MOC3033
1FT
Holding Current, Either Direction
IH
Isolation Voltage (f
= 60 Hz, t =
-
mA
VISO
7500
VIH
-
5
20
Volts
IDRM2
-
-
500
pA
1 sec)
ZERO CROSSING
Inhibit Voltage
(IF = Rated 1FT, MT1-MT2 Voltage above which device will
not trigger.)
Leakage in Inhibited State
(IF = Rated 1FT, Rated VDRM, Off State)
Notes: 1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an IF value less than or equal to max 'FT- Therefore. recommended operating IF lies between max
1FT (15 mA for MOC3031, 10 mA for MOC3032. 5 mA for M0C30331 and absolute max IF (60 mAl.
TYPICAL ELECTRICAL CHARACTERISTICS
OUTPUT PULSE WIOTH - 80 ,..
IF = 30mA
.. +600 f = 60Hz
TA = 25"C
~+400
§ +200
+800
.s
u
~
0
~ -200
0-400
~-600
-800
/
V
/
1.3
/
1.2
./
.1;:1. 1
NO~MAlIZEOI TO
TA
........
""
c
./
~:s
z
1
0.9
V
0.7
-3
-2 -1
0
1
2
VTM, ON·STATE VOLTAGE (VOLTS)
-40
" ""
.........
I'-- r-...
= 25"C
f--
--
r-
0.8
/
-4
........
-20
o
20
40
60
TAo AMBIENT TEMPERATURE ,'CI
80
Figure 2. Trigger Current versus Temperature
,Figure 1. On-State Characteristics
4-64
100
MOC3031, MOC3032, MOC3033
500
1
~
:::>
I-
u
1.5
1.4 I\.
=0
200 - _IF
V
100
'"
z
"~
~
0
u
><
~
~
1.2
::J
1
«
0
'" "- "-
1.3
il§
o
z
~ 0.9
V
=
I
RATED 1FT
f---
"-
'"
.9 0.8
./
I
IF
.........
.........
0.7
0
.9
0.6
5
-40
-20
60
80
20
40
TA, AMBIENT TEMPERATURE lOCI
100
-40
20
40
80
100
60
TA, AMBIENT TEMPERATURE lOCI
-20
Figure 3. IORM1. Peak Blocking Current
versus Temperature
Figure 4. IORM2. Leakage in Inhibit State
versus Temperature
25
~OR~ALlZIED T6 -
1.5
1.4
~ 1.3
TA
1'-.,
::J 1.2
«
~ 1. 1
o
z
1
0.9
'"
-
.......
.t::
0.8
0.7
-40
=
25"C
-
~
I--
I--
20
~
g
15
~
r-- r-
'"
~
-- -
~ 10
\
~
"'"
o
z
~
80
0
100
PULSE
INPUT
I
I
I
I
I
I
I
II
......
10
20
PWin, LED TRIGGER PULSE WIDTH
1
Figure 5. Trigger Current versus Temperature
+250
Vdc
NORMALIZED TO:
PWin" 100,""
TA = 25"C
\
\
\
:::>
u
=
o
20
40
60
TA, AMBIENT TEMPERATURE lOCI
-20
I-
50
100
1,",,1
Figure 6. LEO Current Required to Trigger
versus LEO Pulse Width
R = 10kO
1. The mercury wetted relay provides a high speed repeated pulse to
the D.U.T.
2. 100x scope probes are used, to allow high speeds and voltages.
3. The worst-case condition for static dv/dt is established by triggering
MERCURY
WETTED
RELAY
APPLIED VOLTAGE
WAVEFORM--
the D.U.T. with a normal LED input current, then removing the
Xl00
SCOPE
PROBE
current. The variable RTEST allows the dv/dt to be gradually
increased until the D.U.T. continues to trigger in response to the
applied voltage pulse, even after the LED current has been removed.
The dv/dt is then decreased until the D.U.T. stops triggering. TRC is
measured at this point and recorded.
- - - - - - Vmax
=
250 V
158 V
""'"- - - ~~----- - - - ---
dv/dt
=
0.63 Vmax
TAC
=~
Figure 7. Static dv/dt Test Circuit
4-65
TAC
MOC3031, MOC3032, MOC3033
*For highly inductive loads (power factor < 0.5), change this value to
360 ohms.
Typical circuit for use when hot line switching is
required. In this circuit the "hot" side of the line is
switched and the load connected to the cold or neutral
side. The load may be connected to either the neutral or
hot line.
Rin is calculated so that IF is equal to the rated 1FT of
the part, 5 mA for the MOC3033, 10 mA for the M0C3032,
or 15 mA for the MOC3031. The 39 ohm resistor and 0.D1
jLF capacitor are for snubbing of the triac and mayor may
not be necessary depending upon the particular triac and
load used.
Figure 8. Hot-Line Switching Application Circuit
~--~--~--------~-------11~5VA~
R1
01
Suggested method of firing two, back-to-back SCR's,
with a Motorola triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 1 k ohm.
Vee
MOC30311
3032/3033
SCR
27'
*For highly inductve loads (power factor < 0.5), change this value to
180 ohms.
Note: This optoisolator should not be used to drive a load directly. It is
intended to be a trigger device only.
R2
Figure 9. Inverse-Parallel SCR Driver Circuit
4-66
MOC3041*
15
MOC3042
MOC3043*
PFT ~
&·Pin DIP Optoisolators
Triac Driver Output (400 Volts)
[1FT ~ 10 mA Max)
[1FT ~ 5 mA Max)
The MOC3041, MOC3042 and MOC3043 devices consist of gallium arsenide infrared
emitting diodes optically coupled to a monolithic silicon detector performing the function of
a Zero Voltage Crossing bilateral triac driver.
They are designed for use with a triac in the interface of logic systems to equipment
powered from 115 Vac lines, such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc.
• Simplifies Logic Control of 115 Vac Power
• Zero Voltage Crossing
• dv/dt of 2000 V/IlS Typical, 1000 V/IlS Guaranteed
Applications
• SolenoidlValve Controls
• Lighting Controls
• Static Power Switches
• AC Motor Drives
•
•
•
•
"Motorola Preferred Devices
STYLE 6 PLASTIC
STANDARD THRU HOLE
CASE 730A-04
~
Temperature Controls
E.M. Contactors
AC Motor Starters
Solid State Relays
MAXIMUM RATINGS (TA ~ 25'C unless otherwise noted)
I
mA Max)
Rating
I Symbol I
"Tn LEADFORM
WIDE SPACED 0.4"
CASE 7301).05
Value
Unit
6
Volts
INFRARED EMITTING DIODE
Reverse Voltage
Forward Current -
VR
Continuous
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
IF
60
mA
Po
120
mW
1.41
mWI'C
VDRM
400
Volts
ITSM
1
A
CASE 730F-D4
(LOW PROFILE)
Po
150
1.76
mW
mWI'C
COUPLER SCHEMATIC
VISO
7500
Vac
Po
250
2.94
mW
mWI'C
Junction Temperature Range
TJ
-40 to +100
'C
Ambient Operating Temperature Range (2)
TA
-4010 +85
'C
Storage Temperature Range
Tstg
-40 to +150
'C
Soldering Temperature (lOs)
TL
260
'C
Total Power Dissipation @ TA = 25'C
Negligible Power in Output Driver
Derate above 25°C
OUTPUT DRIVER
Off-State Output Terminal Voltage
Peak Repetitive Surge Current
(PW = 100 11S, 120 pps)
Total Power Dissipation @ TA = 25'C
Derate above 25'C
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 Second Duration)
Total Power Dissipation @ TA = 25'C
Derate above 25'C
(1) Isolation surge voltage, VISO. IS an Internal device dlelectnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
r-~-o6
1.
2.
3.
4.
5.
ANODE
CATHODE
NC
MAIN TERMINAL
SUBSTRATE
DO NOT CONNECT
6. MAIN TERMINAL
(2) Refer to Quality and Reliability Section for test information.
4-67
MOC3041, MOC3042, MOC3043
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
I
Characteristic
Min
Symbol
Typ
Max
Unit
INPUT LED
Reverse Leakage Current
(VR = 6 V)
IR
-
0.05
100
pA
Forward Voltage
(IF = 30 mAl
VF
-
1.3
1.5
Volts
Leakage with LED Off, Either Direction
(Rated VORM, Note 1)
IORMl
-
2
100
nA
Peak On-State Voltage, Either Direction
(lTM = 100 mA Peak)
VTM
-
1.8
3
Volts
Critical Rate of Rise of Off-State Voltage (Note 3)
dvldt
1000
2000
-
VII'S
-
100
OUTPUT DETECTOR (IF = 0 unless otherwise noted)
COUPLED
LED Trigger Current, Current Required to Latch Output
(Main Terminal Voltage = 3 V, Note 2)
MOC3041
MOC3042
MOC3043
1FT
Holding Current, Either Direction
IH
-
VISO
7500
VIH
-
IORM2
-
Isolation Voltage (f
= 60 Hz, t =
-
1 sec)
-
mA
15
10
5
-
-
5
20
Volts
500
/LA
pA
Vac(pk)
ZERO CROSSING
Inhibit Voltage
(IF = Rated 1FT, MT1-MT2 Voltage above which device will
not trigger.)
Leakage in Inhibited State
(IF = Rated 1FT, Rated VORM, Off State)
Notes: 1.
2.
.
3.
-
Test voltage must be applied within dv/dt rating.
All devices are guaranteed to trigger at an IF value less than or equal to max 'FT. Therefore. recommended operating IF lies between max
1FT 115 mA for MOC3041, 10 mA for MOC3042, 5 mA for MOC30431 and absolute max 'F 160 mAl.
This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a function of the load-driving thyristor!s) only.
TYPICAL ELECTRICAL CHARACTERISTICS
I
+soo
~
+600
-
+400
-
I-
~+200
~
!!i!
~
o
V
1.4
1.3
/
i 1.:
/
-400
-BOO
~
0.9
Z
o.s
f'..
-3
-40
-2 -1
0
1
2
VTM, ON·STATE VOLTAGE (VOLTS)
Figure 1. On-State Characteristics
..........
-
.....
0.7
V
-4
I'..
J; 1.2
/'
-200
NORMALIZED TO
TA = 25°C
1.5
./
::i; -600
r
/
OUTPUT PULSE WIDTH - 80 p.s
IF = 30mA
f = 60 Hz
TA = 25°C
-20
-
- -
o
20
40
60
TA, AMBIENT TEMPERATURE (OC)
so
Figure 2. Trigger Current versus Temperature
4-68
MOC3041, MOC3042, MOC3043
500
1.5
1.4 I'..
-
I-IF=O
"-
1.3
Cl
~
1.2
1.1
~
z
~
V
0
I
'" '"
0.9
IF
"
./
-
"-
"'"
a:
.9 0.8
0.7
0
I
= RATED 1FT
.........
0.6
5
-w
~
0
w ~ M 00
TA, AMBIENT TEMpeRATURE ('CI
100
-20
-~
Figure 4. IDRM2. leakage in Inhibit State
versus Temperature
Figure 3. IDRM1. Peak Blocking Current
versus Temperature
1.5
1.4
~ 1.3
25
I I
I
~OR~LI~DTb- I--
"'-
:::; 1.2
1. 1
~ 1
i
TA
'"
25'C
I-
Z
~
NORMALIZED TO:
PWin ,. 100 ,..
TA = 25'C
20
1
S 15 t
- I--
a:
........
Cl
r-
0.8
0.7
~
-- --
Cl
10
\
i
r-
"-
z
~
o
20
40
60
TA, AMBIENT TEMpeRATURE rCI
20
\
~
..... 1"---.
1= 0.9
-~
=
20
40
60
80
100
TA, AMBIENT TEMPERATURE ('CI
80
100
~t--
0
10
1
20
50
lOll
PWin, LED TRIGGER PULSE WIDTH (,..1
Figure 5. Trigger Current versus Temperature
Figure 6. LED Current Required to Trigger
versus LED Pulse Width
+~
Vdc
R = lOW
PULSE
INPUT
1. The mercury wetted relay provides a high speed repeated pulse to
the D.U.T.
2. 100x scope probes are used, to allow high speeds and voltages.
3. The worst-case condition for static dv/dt is established by triggering
the D.U.T. with a normal LED input current. then removing the
current. The variable RTEST allows the dv/dt to be gradually
increased until the D.U.T. continues to trigger in response to the
applied voltage pulse. even after the LED current has been removed.
CTEST
MERCURY
WEmD
RELAY
Xl00
SCOPe
PROBE
The dv/dt is then decreased until the D.U.T. stops triggering. "RC is
measured at this point and recorded.
APPLIED VOLTAGE
WAVEFORM--
- - - - - Vma. =
~V
252 V
....~---~------- - ---
dv/cIt = 0.63 Vma. = 252
TftC
TftC
Figure 7. Static dv/dt Test Circuit
4-69
MOC3041, MOC3042, M0C3043
27-
j.!.......;.~......-
.....- - - ( l
HOT
240 Vee
NEUTRAL
*For highly inductive loads (power factor < 0.5). change this value to
Typical circuit for use when hot line switching is
required. In this circuit the "hot" side of the line is
switched and the load connected to the cold or neutral
side. The load may be connected to either the neutral or
hot line.
Rin is calculated so that IF is equal to the rated 1FT of
the part, 5 mA for the MOC3043, 10 mA for the M0C3042,
or 15 mA for the MOC3041. The 39 ohm resistor and 0.01
p.F capacitor are for snubbing of the triac and mayor may
not be necessary depending upon the particular triac and
load used.
360 ohms.
Figure 8. Hot-Une Switching Application Circuit
~-~--~---------'---------240~
R1
01
Suggested method of firing two, back-to-back SCR's,
with a Motorola triac driver. Diodes can be 1N4001 ; resistors, Rl and R2, are optional 330 ohms.
Vee
MOC30411
3042J
3043
seR
27-
*For highly inductve loads (power factor < 0.5), change this value to
360 ohms.
Note: This optoisolator should not be used to drive a load directly. It Is
intended to be a trigger device only.
R2
Figure 9. Inverse-Parallel SCR Driver Circuit
4-70
MOC3061
MOC3062
=
MOC3063*
PFT= 15 mA Maxi
6·Pin DIP Optoisolators
Triac Driver Output (600 Volts)
[1FT
[1FT = 5 mA Max]
The MOC3061, MOC3062 and MOC3063 devices consist of gallium arsenide infrared
emitting diodes optically coupled to monolithic silicon detectors performing the functions of
Zero Voltage Crossing bilateral triac drivers.
They are designed for use with a triac in the interface of logic systems to equipment
powered from 240 Vac lines, such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc.
• Simplifies Logic Control of 240 Vac Power
• Zero Voltage Crossing
• dv/dt of 1500 V/IlS Typical, 600 V/tJ.S Guaranteed
Applications
• SolenoidNalve Controls
• Lighting Controls
• Static Power Switches
• AC Motor Drives
•
•
•
•
*Motorola Preferred Device
STYLE 6 PLASTIC
STANDARD THRU HOLE
CASE 730A-114
Temperature Controls
E.M. Contactors
AC Motor Starters
Solid State Relays
MAXIMUM RATINGS
I
10 mA Maxi
Rating
I Symbol
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
Value
Unit
6
Volts
INFRARED EMITTING DIODE
Reverse Voltage
VR
"s"rF" LEADFORM
SURFACE MOUNT
CASE 730C-114
(STANDARD PROFILE)
IF
60
mA
Po
120
mW
1.41
mW/'C
VDRM
600
Volts
ITSM
1
A
CASE 730F-04
(LOW PROFILE)
Po
150
1.76
mW
mWI'C
COUPLER SCHEMATIC
VIsa
7500
Vae
Po
250
2.94
mW
mWI'C
Junction Temperature Range
TJ
-40 to +100
'C
Ambient Operating Temperature Range (2)
TA
-40 to +85
'C
Storage Temperature Range
Tstg
-40 to +150
'C
Soldering Temperature (lOs)
TL
260
'C
Forward Current -
Continuous
=
Total Power DiSSipation @ TA 25'C
Negligible Power in Output Driver
Derate above 25'C
OUTPUT DRIVER
Off-State Output Terminal Voltage
Peak Repetitive Surge Current
(PW 100 !IS, 120 pps)
=
Total Power DiSSipation @ TA
Derate above 25'C
=25'C
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ae Voltage, 60 Hz, 1 Second Duration)
Total Power Dissipation @ TA
Derate above 25'C
=25'C
(1) Isolation surge voltage, VIse. Is an Internal deVice dlelectnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test infonnation.
4-71
1.
2.
3.
4.
5.
ANODE
CATHODE
NC
MAIN TERMINAL
SUBSTRATE
DO NOT CONNECT
6. MAIN TERMINAL
MOC3061, MOC3062, MOC3063
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
I
Symbol
Min
Typ
Max
Unit
Reverse Leakage Current
(VR = 6 V)
IR
-
0.05
100
p.A
Forward Voltage
(IF = 30 mAl
VF
-
1.3
1.5
Volts
IDRMl
-
60
500
nA
1500
-
V/,.s
Characteristic
.
INPUT LED
OUTPUT DETECTOR (IF = 0)
Leakage with LED Off, Either Direction
(Rated VDRM, Note 1)
Critical Rate of Rise of Off-State Voltage (Note 3)
dv/dt
600
COUPLED
LED Trigger Current, Current Required to Latch Output
(Main Terminal Voltage = 3 V, Note 2)
MOC3061
MOC3062
MOC3063
1FT
-
15
10
5
VTM
-
1.B
3
IH
-
100
-
p.A
V,NH
5
20
Volts
IDRM2
-
-
500
p.A
-
-
Vac(pk)
Peak On-State Voltage, Either Direction
(lTM = 100 mA. 'F = Rated 'FT)
Holding Current, Either Direction
Inhibit Voltage (MT1-MT2 Voltage above which device will not
trigger.)
(IF = Rated 'FT)
Leakage in Inhibited State
(IF = Rated 1FT, Rated VDRM, Off State)
Isolation Voltage If
= 60 Hz, t =
mA
-
1 sec)
7500
V,SO
Volts
Notes: 1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an IF value less than or equal to max 'FT. Therefore, recommended operating IF lielil between max
Iff (15 mA for MOC3061, 10 mA for M0C3062, 5 mA for MOC30631 and absolute max 'F (60 mAl.
3. This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only_
TYPICAL CHARACTERISTICS
1.5
+800
0.8
0.7
0.6
0.5
-4
--- -
r-;.....
z
/
e-
-3
-40
-2 -1
0
1
2
VTM, ON·STATE VOLTAGE IVOLTS)
-20
o
20
40
60
80
TA, AMBIENT TEMPERATURE 1°C)
Figure 2, Inhibit Voltage versus Temperature
Figure 1. On-State Characteristics
4-72
100
MOC3061, MOC3062, MOC3063
500
1.5
r--
1.4 r\.
=0
IF
"1"-
1.3
~
1.2
~
1
I
I
IF = RATED 1FT f----
~
~
z
.........
~ 0.9
a:
.9 0.8
V
0
"-
./
"""
0.7
0
.......
0.6
5
-40
-20
0
20
40
60
80
TA, AMBIENT TEMPERATURE lOCI
100
20
40
60
80
100
TA, AMBIENT TEMPERATURE lOCI
- 20
-40
Figure 3, Leakage with LED Off
versus Temperature
Figure 4. IDRM2. Leakage in Inhibit State
versus Temperature
25
1.5
1.4
~OR~AlIZ~D T6 -
1""'-
~ 1.3
~ 1. 2
a: 1. 1
o
z
~
TA = 25°C
;z
t-'--
~ 20
=>
u
ffi
.......
~ 15
'"
1
0.9
r-.
0.8
O. 7
-40
-
I-
~
r-
--
-
10
\
~
r-.
o
20
40
60
TA, AMBIENT TEMPERATURE I'CI
- 20
~
~
oz
.r;
80
100
NORMALIZED TO:
PWjn'" l00!,-s
\
\
\
..........
r-
0
10
20
PWjn, LED TRIGGER PULSE WIDTH I!,-sl
1
50
100
Figure 6. LED Current Required to Trigger
versus LED Pulse Width
Figure 5, Trigger Current versus Temperature
+400
Vdc
R = 10 k!1
1. The mercury wetted relay provides a high speed repeated pulse to
the D.U.T.
PULSE
INPUT
2. 100x scope probes are used. to allow high speeds and voltages.
3. The worst-case condition for static dv/dt is established by triggering
the D.U.T. WIth a normal LED input current, then removing the
current. The variable RTEST allows the dv/dt to be gradually
increased until the D.U.T. continues to trigger in response to the
applied voltage pulse. even after the LEO current has been removed.
The dv/dt is then decreased until the D.U.T. stops triggering. TRC is
measured at this point and recorded.
CTEST
MERCURY
WETTED
RELAY
APPLIED VOLTAGE
WAVEFORM--
Xloo
D.U.T.
SCOPE
PROBE
Vmax = 400 V
252 V
."'~- - - ~~----- -- - - --
dvldl = 0.63 Vmax = 378
~C
Figure 7. Static dv/dt Test Circuit
4-73
~C
MOC3061, M0C3062, MOC3063
Typical circuit for use when hot line switching is
required. In this circuit the "hot" side of the line is
switched and the load connected to the cold or neutral
side. The load may be connected to either the neutral or
hot line.
Rin is calculated so that IF is equal to the rated 1FT of
the part, 15 mA for the MOC3061, 10 mA for the
MOC3062, and 5 mA for the MOC3063. The 39 ohm resistor and 0.01 p.F capacitor are for snubbing of the triac
and mayor may not be necessary depending upon the
particular triac and load used.
2~V.c
NEUTRAL
Figure 8. Hot-Line Switching Application Circuit
r---~--~----------t--------2~-V~
R1
01
Suggested method of firing two, back-to-back SCR's,
with a Motorola triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 330 ohms.
Vcc
SCR
P-"NI""'; MOC306HI3
seR
27'
02
*For highly inductive loads (power factor < 0.5), change this value to
360 ohms.
Note: This optoisolator should not be used to drive a load directly. It is
intended to be a trigger device only.
R2
Figure 9. Inverse-Parallel SCR Driver Circuit
4-74
MOC3081
[1FT =
MOC3082
[1FT =
MOC3083
15 mA Max)
&·Pin DIP Optoisolators
Triac Driver Output (800 Volts)
10 rnA Max)
~FT
The MOC3081, MOC3082 and MOC3083 devices consist of gallium arsenide infrared
emitting diodes optically coupled to monolithic silicon detectors performing the function of
Zero Voltage Crossing bilateral triac drivers.
They are designed for use with a triac in the interface of logic systems to equipment
powered from 240 Vac lines, such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc.
• Simplifies Logic Control of 240 Vac Power
• Zero Voltage Crossing
• dv/dt of 1500 V/jls Typical, 600 V/jls Guaranteed
Applications
• SolenoidlValve Controls
• Lighting Controls
• Static Power Switches
• AC Motor Drives
•
•
•
•
STYLE 6 PLASTIC
STANDARD THRU HOLE
CASE 730A-114
~
Temperature Controls
E.M. Contactors
AC Motor Starters
Solid State Relays
MAXIMUM RATINGS
I
= 5 rnA Max)
Rating
I Symbol
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
Value
Unit
6
Volls
INPUT LED
Reverse Voltage
VR
Forward Current - Continuous
IF
60
mA
Total Power Dissipation @ TA =25'C
Negligible Power in Output Driver
Derate above 25'C
PD
120
mW
1.41
mW/,C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-114
(STANDARD PROFILE)
OUTPUT DRIVER
Off-State Output Terminal Voltage
VDRM
800
Volls
Peak Repetitive Surge Current
(PW =100 jlS, 120 pps)
ITSM
1
A
CASE 730F-04
(LOW PROFILE)
PD
150
1.76
mW
mW/,C
COUPLER SCHEMATIC
VISO
7500
Vae
Po
250
2.94
mW
mW/'C
Junction Temperature Range
TJ
-40 to +100
'C
Ambient Operating Temperature Range (2)
TA
-40 to +85
'C
Storage Temperature Range
Tstg
-40 to +150
'C
Soldering Temperature (lOs)
TL
260
'C
Total Power Dissipation
Derate above 25'C
@
TA =25'C
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 Second Duration)
Total Power Dissipation
Derate above 25'C
@
TA = 25'C
(1) IsolatIon surge voltage, viSO. IS an mtemal devICe dlelec1nc breakdown rating.
For this test, Pins 1 and 2 afe common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test infonnation.
4-75
1. ANODE
2. CATHODE
3. NC
4. MAIN TERMINAL
5. SUBSTRATE
DO NOT CONNECT
6. MAIN TERMINAL
MOC3081, MOC3082, MOC3083
ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted)
I
I
Characteristic
Symbol
Min
Typ
Max
'FT
-
15
10
5
1.8
3
100
-
p.A
V,NH
-
5
20
Volts
IDRM2
-
300
500
p.A
Unit
INPUT LED
Reverse Leakage Current (VR
Forward Voltage (IF
~
OUTPUT DETECTOR (IF
~
6 V)
30 mAl
~ 0)
Leakage with LED Off, Either Direction (VDRM
~
800 V, Note 1)
Critical Rate of Rise of Off-State Voltage (Note 3)
COUPLED
LED Trigger Current, Current Required to Latch Output
(Main Terminal Voltage ~ 3 V, Note 2)
MOC3081
MOC3082
MOC3083
Peak On-State Voltage, Either Direction
(lTM ~ 100mA, IF ~ Rated 'FT)
VTM
Holding Current. Either Direction
IH
Inhibit Voltage (MT1-MT2 Voltage above which device will not
trigger)
(IF ~ Rated 'FT)
Leakage in Inhibited State
(IF ~ Rated 'FT, VDRM = 800 V, Off State)
mA
Volts
Notes: 1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an IF value less than or equal to max 1FT- Therefore, recommended operating IF lies between max
'FT 115 rnA for MOC3081, 10 mA for MOC3082, 5 mA for MOC3083) and absolute max IF (60 mAl.
3. This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a fUnction of the load-driving thyristor(s) only.
TYPICAL CHARACTERISTICS
1.5
WID~H
+80or--10UTPJT PULiE
- 801p.s
r--'F = 30mA
.. +600
f = 60Hz
~ +400--TA=25"C f - - f -
~
'" 1.2
/
u
--
t-
I
:i: 0.9
/
l-
r- I- r-
-
I-
z
:> 0.8
/
0.7
'/
-4
NORMALIZED TO
f--TA = 25°C
1.3
-3
-2
1
0.6
0.5
-40
1
VTM, ON·STATE VOLTAGE (VOLTS)
-20
o
20
40
60
TA, AMBIENT TEMPERATURE lOCI
80
Figure 2. Inhibit Voltage versus Temperature
Figure 1. On-State Characteristics
4-76
100
MOC3081, MOC3082, MOC3083
500
i~
1. 5
1.4
200
./
gj 100
v
o
~
u
z
8'"
~ 1. 1
L
'"
~
'" "- "'-
~
e
1
z
~ O. 9
£> O. B
50
g
i\.
1.3
1. 2
./
20
i
I
VDR~ ~ B~OV- t----
~
~ 10
.~
IF = RATED 1FT
-
......
.......
""-
.........
O. 7
O. 6
-40
0
20
40
60
BO
TA. AMBIENTTEMPERATURE IC}
-20
-40
100
20
40
60
BO
100
TA. AMBIENT TEMPERATURE 1°C}
-20
Figure 3. Leakage with LED Off
versus Temperature
Figure 4. IORM2. Leakage in Inhibit State
versus Temperature
25
~OR~AlIZ~D Tb -
1.5
TA = 25°C
1.4
o 1.
~
~
_
e
z
3"- ""-
1. 2
1. 1
-
0-
Z
-
--
1
~ 0.9
O.B
0.7
o
10
~
- --
~
r-
<{
~
e
z
~
o
BO
20
40
60
TA. AMBIENT TEMPERATURE I CI
20
\
~
I
- 40
o
1\
15 \
\
w
g'"
t---..
NORMALIZED TO:
PWin'" 100 p.s
~ 20
=>
u
100
"'"
0
10
20
PWin. LED TRIGGER PULSE WIDTH Ip.s}
1
Figure 5. Trigger Current versus Temperature
50
100
Figure 6. LED Current Required to Trigger
versus LED Pulse Width
+ 400
Vdc
10 kl!
PULSE
INPUT
CTEST
MERCURY
WETTED
RELAY
X100
SCOPE
PROBE
1. The mercury wetted relay provides a high speed repeated pulse to
the D.U.T.
2. 100x scope probes are used. to allow high speeds and voltages.
3. The worst-case condition for static dv/dt is established by triggering
the D.U.T. with a normal lED input current, then removing the
current. The variable RTEST aHows the dv/dt to be gradually
increased until the D.U.T. continues to trigger in response to the
applied voltage pulse, even after the LEO current has been removed.
The dv/dt is then decreased until the D.U.r. stops triggering. TAC is
measured at this point and recorded.
Vmax
APPLIED VOLTAGE
WAVEFORM--
..... -- ~~-------
~
400 V
252 V
dv1dt ~ 0.63 Vmax ~ 504
- ---
'RC
Figure 7. Static dv/dt Test Circuit
4-77
'RC
MOC3081, MOC3082, MOC3083
Vcc
Rin
27'
~~vv~--~-------oHOT
240 Vac
NEUTRAL
*For highly inductive loads (power factor < 0.5). change this value to
360 ohms.
Typical circuit for use when hot line switching is
required. In this circuit the "hot" side of the line is
switched and the load connected to the cold or neutral
side. The load may be connected to either the neutral or
hot line.
Rin is calculated so that IF is equal to the rated 1FT of
the part, 15 mA for the MOC3081, 10 mA for the
MOC3082, and 5 mA for the MOC3083. The 39 ohm resistor and 0.01 JLF capacitor are for snubbing of the triac
and mayor may not be necessary depending upon the
particular triac and load used.
Figure 8. Hot-Line Switching Application Circuit
;----.---1~---------.---------24-0V~
Rl
Dl
Suggested method of firing two, back-to-back SCR's,
with a Motorola triac driver. Diodes can be 1N4001; resistors, R1 and R2, are optional 330 ohms.
Vcc
SCR
v-"",..,....., MOC3081-83
SCR
27'
*For highly inductive loads (power factor < 0.5). change this value to
360 ohms.
Note: This device should not be used to drive a load directly. It is
intended to be a trigger device only.
R2
Figure 9. Inverse-Parallel SCR Driver Circuit
4-78
MOC5007*
= mA
MOC5008
= mA
MOC5009
[IF(on)
&·Pin DIP Optoisolators
Logic Output
[IF(on)
Guaranteed Switching Times -Ion, toff 4 < ~s
Built-In ON/OFF Threshold Hysteresis
High Data Rate, 1 MHz Typical (NRZ)
Wide Supply Voltage Capability
Microprocessor Compatible Drive
Applications
• Interfacing Computer Terminals to
Peripheral Equipment
• Digital Control of Power Supplies
• Line Receiver - Eliminates Noise
Rating
Max)
'Motorola Preferred Device
STYLE 5 PLASTIC
STANDARD THRU HOLE
CASE 730A-04
• Digital Control of Motors and Other
Servo Machine Applications
• Logic to Logic Isolator
• Logic Level Shifter - Couples TIL to CMOS
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
4
Max)
[IF(on) = 10 mA Max)
The MOC5007, MOC500B and MOC5009 have a gallium arsenide IRED optically
coupled to a high-speed integrated detector with Schmitt trigger output. Designed for
applications requiring electrical isolation, fast response time, noise immunity and digital
logic compatibility.
•
•
•
•
•
1.6
I Symbol I
Value
Unit
~
"T" LEADFORM
WIDE SPACED 0.4"
CASE 730D-05
INPUT LED
Reverse Voltage
VR
6
Volis
Forward Current -
IF
60
1.2
mA
Amp
PD
120
1.41
mW
mWrC
Output Voltage Range
Vo
0-16
Volts
Supply Voltage Range
Volis
Continuous
Peak
Pulse Width = 300 lIS, 2% Duty Cycle
LED Power Dissipation @ TA = 25°C
Derate above 25°C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
OUTPUT DETECTOR
VCC
3-16
Output Current
10
50
mA
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
PD
150
1.76
mW
mWrC
PD
250
2.94
mW
mWrC
CASE 730F-04
(LOW PROFILE)
SCHEMATIC
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Maximum Operating Temperature (2)
TA
-40 to +85
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Soldering Temperature (10 s)
TL
260
°C
VISO
7500
Volis
Isolation Surge Voltage (1)
(Peak ae Voltage, 60 Hz, 1 Second Duration)
PINt. ANODE
2. CATHODE
4. VD
(1) Isolation surge voltage IS an Internal device dielectriC breakdown rating.
For this test. Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
5. GROUND
(2) Refer to Quality and Reliability Section for test information.
6. Vee
4-79
MOC5007, MOC5008, MOC5009
ELECTRICAL CHARACTERISTICS (TA = 0 to 70·C)
I
Symbol
Characteristic
Max
Min
Typ
0.75
-
0.05
10
pA
1.2
0.95
1.5
Volts
Unit
INPUT LED
Reverse leakage Current (VR = 3 V, Rl = 1 Mn)
IR
Forward Voltage (IF = 10 rnA)
(IF = 0.3 rnA)
VF
Capacitance (VR = 0 V, f = 1 MHz)
C
18
-
pF
OUTPUT DETECTOR
VCC
3
-
15
Volts
ICC(off)
-
1
5
rnA
IOH
-
-
100
pA
Operating Voltage
Supply Current (IF = 0, Vec = 5 V)
Output Current, High (IF = 0, VCC = Vo = 15 V)
COUPLED
Supply Current (IF = IF(on), VCC = 5 V)
ICC(on)
Output Voltage, low (Rl = 270 n, VCC = 5 V, IF = IF(on))
VOL
-
1.6
5
rnA
0.2
0.4
Volts
1
1.6
4
10
rnA
Threshold Current, ON
(Rl = 270 n, VCC = 5 V)
MOC5007
MOC5008
MOC5009
IF(on)
Threshold Current, OFF
(RL = 270 n, VCC = 5 V)
MOC5OO7
MOC5008, 5009
IF(off)
0.3
0.3
0.75
Hysteresis Ratio (Rl = 270 n, VCC = 5 V)
IFloff)
IF(on)
o.s
0.75
Isolation Voltage (1) 60 Hz, AC Peak, 1 second, TA = 25·C
VISO
7500
-
-
ton
-
1.2
4
-
0.1
-
Turn-On Time
Fa" Time
Turn-Off Time
Rise Time
RL = 270n
VCC = SV,
IF = IF(on)
TA = 25·C
tf
toff
tr
-
(1) For this test IRED Pins 1 and 2 are common and Output Gate Pins 4. 5, 6 are common.
ICC
r---~_-05V
270n
ro-
I
Vin
I, = If = 0.01 JLS
Z=50n ~------~
I~~
I
I
I
I
L
_--I-t---.
Figure 1, Switching Test Circuit
4-80
-
-
rnA
-
0.9
1.2
4
0.1
-
Vac(pk)
,.,.
MOC5007, MOC5008, MOC5009
TYPICAL CHARACTERISTICS
6
VOH
5
4
,
IF(off)
3
IF(on)
~
2
RL=270n
Vee = 5V TA = 25"C
1
VOL
0
0.75
IF, INPUT CURRENT (mA)
Figure 2. Transfer Characteristics for MOC5007
I I 1 J 1
I J 1
1.6
53
':l
~ 1.4
~
...
"-
T0RN bN
1.2
~
cc
=>
u
V
9
a O.B
:x:
ill:x:
.......
V
--V
6
+HR~SHOlD
..J-.+I I I I
1....1-
2
TURN OFF JHR~SH~LD
8
6
rr-r-
0.4
/
1
IF NORMALIZED TO IF(on) AT Vee = 5 V TA = 25°C
0.6
/'
4
6
B
10
12
Vee, SUPPLY VOLTAGE (VOLTS)
b--:::" I-"""
-~
14
-~
/
V
NORMALIZED TO
Vee = 5V
TA = 25°C
0
~
~
100
~
TA, TEMPERATURE ("C)
Figure 3. Threshold Current versus Supply Voltage
Figure 4. Threshold Current versus Temperature
1
~
TA'=
0.5
~
./
~
-,
0. 2
w
IF
~I o. 1
g
5
5a
= 5mA
~
I
~~
:.-:;:-
,,~ ~~
~
0.05
1/
2
~. 0.02
>
0
5
10
20
10, LOAD CURRENT (mA)
50
100
Figure 5. Output Voltage, Low versus Load Current
O"~~ r--
25°C
70oC"
6
~~
--
IF
-----
-:/:
~~
V_ I-ooe
--
~
~
/
25°e~
~o£~
~-:
- f-""-
= OmA
6
8
10
12
Vee, SUPPLY VOLTAGE (VOLTS)
14
Figure 6. Supply Current versus Supply Voltage
4·81
16
MOC8020
=
MOC8021
[eTR
&·Pin DIP Optoisolators
Darlington Output
(No Base Connection)
500% Min)
[CTR = 1000% Min)
STYLE 3 PLASTIC
The MOC8020 and MOC8021 devices consist of a gallium arsenide infrared emitting
diode optically coupled to a monolithic silicon photodarlington detector.
• No Base Connection for Improved Noise Immunity
• High Sensitivity to Low Input Drive Current
Applications
• Appliances, Measuring Instruments
• 1/0 Interfaces for Computers
• Programmable Controllers
• Portable Electronics
MAXIMUM RATINGS (TA
I
• Interfacing and coupling systems of
different potentials and impedances
• Solid State Relays
=25°C unless otherwise noted)
Rating
STANDARD THRU HOLE
CASE 730A-04
I Symbol
~
"T" LEADFORM
WIDE SPACED 0.4"
CASE 730D..oS
Value
Unit
VR
3
Volts
IF
60
mA
Po
120
mW
1.41
mWf'C
INPUT LED
Reverse Voltage
Forward Current -
Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Deteclor
Derate above 25°C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 73DC-04
(STANDARD PROFILE)
OUTPUT DETECTOR
Collector-Emitter Voltage
VCEO
50
Volts
Emitter-Collector Voltage
VECO
5
Volts
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
150
mW
1.76
mWf'C
VISO
7500
Vac
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Po
250
2.94
mW
mWf'C
Ambient Operating Temperature Range (2)
TA
-55 to +100
°C
Storage Temperature Range
Tstg
-55 to +150
°C
TL
260
°C
Po
@
CASE 7301'-04
(LOW PROFILE)
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Soldering Temperature (lOsee, 1/16" from case)
(1) Isolation surge voltage IS an Intemal device dlelectrlc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
SCHEMATIC
10-----.
-06
2o-J \ --r-;::r--o 5
sD-
~4
PIN 1. LED ANODE
2. LED CATHODE
S. N.C.
(2) Refer to Quality and Reliability Section for test infonnation.
4. EMITIER
5. COLLECTOR
6. N.C.
4-82
MOC8020, MOC8021
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
I
Characteristic
Min
Symbol
Typ
Max
Unit
INPUT LED
Reverse Leakage Current
(VR = 3V)
IR
-
0.05
10
pA
Forward Voltage
(IF = 10 mAl
VF
-
1.15
2
Volts
Capacitance
(VR = 0 V, f = 1 MHz)
C
-
18
-
pF
ICEO
-
-
100
nA
PHOTODARUNGTON (TA = 25°C and IF = 0, unless otherwise noted)
Collector-Emitter Dark Current
(VCE = 10 V)
Collector-Emitter Breakdown Voltage
(lC = 1 mAl
V(BR)CEO
50
-
-
Volts
Emitter-Collector Breakdown Voltage
(IE = 100 pA)
V(BR)ECO
5
-
-
Volts
-
-
-
-
7500
-
-
Volts
-
1011
-
Ohms
0.2
-
pF
-
3.5
-
!"S
COUPLED (TA = 25°C unless otherwise noted)
Collector Output Current
(VCE = 5 V, IF = 10 mAl
IC
MOC8020
MOC8021
50
100
Isolation Surge Voltage (1, 2), 60 Hz Peak ac, 1 Second
VI SO
Isolation Resistance (1)
(V = 500 V)
RISO
Isolation Capacitance (1)
(V=O,f=IMHz)
CISO
mA
SWITCHING
Turn-On TIme
ton
Turn-Off Time
toff
VCC = 10 V, RL = 1000, IF = 5 mA
Rise Time
tr
Fail TIme
tf
1
-
2
-
95
(1) For this test LED Pins 1 and 2 are common and Phototransistor Pins 4 and 5 are common.
(2) Isolation Surge Voltage,
Visa. is an internal device dielectric breakdown rating.
TYPICAL CHARACTERISTICS
2
--~~_I_~jJl~~ON~Y
__ -
I
I
_ _ PULSE OR DC
I I
I I
II
/
I
I---'
2'iT12~
l-t1
100"<:
,.'
~
-iA~~
~
......
I
I
I
1'1'
I!'
-NORMALIZED TO: IF
TA
II,
I..-!:::
;1 '
·Ii!
I!
1 TA 55°C THR
~R+25°C
"
10
100
IF, LED FORWARD CURRENT (mA)
10mA
= 25°C
-
-
~
f-t 70;C
+ l00°C-'"
1
0.5
1000
1
2
5
10
IF, LED INPUT CURRENT (rnA)
20
50
Figure 2. Output Current versus Input Current
Figure 1. LED Forward Voltage versus Forward Current
4-83
MOC8020, MOC8021
140
-
120
I
!I
V
10
I
~10~A
"I'
i
5't
a
...-
~
i
a:
r·
~ 0.7
I
1
2mA
VI
I
y
o
o
NORMALIZED TO TA = 25°C-
~
~
1 mA
5
0.2
00.1
2345678
VCE. COLLECTOR·EMlffiR VOLTAGE (VOLTSI
£;>
10
-80 -40 -20
Figure 3. Collector Current versus
Collector-Emitter Voltage
~ 1.3
~l.1
;!:
1
"-
g
~
0.9
~
0.8
:il
=
NORMALIZED TO TA = 25°C
"
........
I'--. --..
...........
40
80
80
100
NORMALIZED TO:
VCE= 10V
TA = 25°C
=
-
./
VCE = 30V
~ 0.7
...- ../
10V
V
./
./
./
8
1
~
20
Figure 4. Output Current versus Ambient Temperature
g
~ 1.2
0
TA, AMBIENT TEMPERATURE lOCI
-00 -40 -20
0
20
40
00
80
100
o
~
40
20
TA, AMBIENT TEMPERATURE lOCI
80
80
100
TA, AMBIENT TEMPERATURE lOCI
Figure 6. Collector-Emitter Dark Current versus
Ambient Temperature
Figure 5, Collector-Emitter Voltage versus
Ambient Temperature
1000
1000
R~ ~ l0iJ0
Vce
RL
10 V
\.
100
~
1000
100
100
w
::;;
I"-
10
i=
"100
10
io
1
0.1
0.2
0.5
1
2
5
10
IF, LED INPUT CURRENT ImAI
VCC
20
50
1
0.1
100
0.2
0.5
1
10
IF, LED INPUT CURRENT ImAI
10V
20
Figure 8. Tum-OH Switching Times
Figure 7. Turn-On Switching Times
4-84
50
100
MOC8020, MOC8021
WAVEFORMS
TEST CIRCUIT
VCC~10V
.~10on
~TPUT
Figure 9. Switching Times
4-85
MOC8030
= 300%
MOC80S0
[CTR
&·Pin DIP Optoisolators
Darlington Output
(No Base Connection)
Min]
[CTR = 500% Min]
Motorola Preferred Devices
STYLE 3 PLASTIC
The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting
diodes optically coupled to monolithic silicon photodariington detectors.
They are deSigned for use in applications requiring high sensitivity at low input currents.
• High Sensitivity to Low Input Drive Current
• High Collector-Emitter Breakdown Voltage - 80 Volts Minimum
• No Base Connection for Improved Noise Immunity
~
STANDARD THRU HOLE
CASE 730A-Q4
Applications
•
•
•
•
Appliances, Measuring Instruments
I/O Interfaces for Computers
Programmable Controllers
Portable Electronics
• Interfacing and coupling systems of
different potentials and impedances
• Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
I Symbol
Value
Unit
3
Volts
"r' LEADFORM
WIDE SPACED 0.4"
CASE 7300-0s
INPUT LED
Reverse Voltage
Forward Current -
VR
Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
IF
60
rnA
Po
120
mW
1.41
mWf'C
"s"r'F" LEADFORM
SURFACE MOUNT
CASE 730C-Q4
(STANDARD PROFILE)
OUTPUT DETECTOR
Collector-Emitter Voltage
VCEO
80
Volts
Emitter-Collector Voltage
VECO
5
Volts
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
150
mW
1.76
mWf'C
VISO
7500
Vac
Total Device Power DiSSipation @ TA = 25°C
Derate above 25°C
Po
250
2.94
mW
mWf'C
Ambient Operating Temperature Range (2)
TA
-55 to +100
°C
Tstg
-55 to +150
°C
TL
260
°C
PD
CASE 730F-Q4
(LOW PROFILE)
SCHEMATIC
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, I sec Duration)
Storage Temperature Range
Soldering Temperature (10 sec, 1/16"from case)
(1) Isolation surge voltage IS an Internal devIce dielectrIC breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test Information.
4-86
10--.,
--06
20--1" --r;::r-o 5
3~
"1-...04
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. N.C.
MOC8030, MOC8050
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
I
I
Symbol
Min
Typ
Max
Unit
Reverse Leakage Current
(VR = 3 V)
IR
-
0.05
10
I'-A
Forward Voltage
(IF = 10 rnA)
VF
-
1.15
2
Volts
Capacitance
(VR = 0 V, f = 1 MHz)
C
-
18
ICEO
-
-
Collector-Emitter Breakdown Voltage
(lC = 1 rnA)
V(BR)CEO
80
-
-
Volts
Emitter-Collector Breakdown Voltage
(IE = loo!l-A)
V(BR)ECO
5
-
-
Volts
30
50
-
Ohms
pF
Characteristic
INPUT LED
-
pF
PHOTODARLINGTON (TA = 25·C and IF = 0, unless otherwise noted)
Collector-Emitter Dark Current
(VCE = 60 V)
COUPLED (TA
=
1
I'-A
25·C unless otherwise noted)
Collector Output Current
(VCE = 1.5 V, IF = 10 rnA)
mA
IC
7500
-
-
1011
-
0.2
-
3.5
tr
-
1
-
tf
-
2
-
MOC8030
MOC8050
Isolation Surge Voltage (1, 2), 60 Hz Peak ac, 5 Second
VISO
Isolation Resistance (1)
(V = 500 V)
RISO
Isolation Capacitance (1)
(V = 0 V, f = 1 MHz)
CISO
Volts
SWITCHING
Turn-On Time
ton
Turn-Off Time
toff
VCC = 10V, RL = 100n,IF = 5 mA
Rise Time
Fall Time
95
"""
(1) For this test lEO Pins 1 and 2 are common and Phototransistor Pins 4 and 5 are common.
(2) Isolation Surge Voltage,
Visa. is an internal
device dielectric breakdown rating.
TYPICAL CHARACTERISTICS
2
-~~~-~JUIL~~ON~Y
I
~ 1.8 ----PULSE OR DC
g
I
/
~
~ 1.6
'"a:
~
1?
/
/
r- NORMALIZED TO: IF
TA
lOrnA
= 25·C
....,,;
p-
I
V
1.4
-TA
~1.2
I
I
~
~
I
I
= -55·C
-fi1ji
i""'"
l00·C
V
l-M
V
V
"
TA
f--
r-
/'
10
100
IF, LED FORWARD CURRENT (mAl
55·C THR
V
~=f+25°C
+ 70·C
-t'100I C'"
0.5
1000
Figure 1. LED Forward Voltage versus Forward Current
1
2
5
10
IF, LED INPUT CURRENT (mAl
20
50
Figure 2. Output Current versus Input Current
4-87
MOC8030, MOC8050
140
0
I
I
~=10+
....I
I
II ..........
!
5f
~
~
~
I
v
20
o y
o
2mA
8
1 mA
=>
1
0.7
O. 5
~ 0.2
2345678
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
~o. 1
10
Figure 3. Collector Current versus
Collector-Emitter Voltage
I,
NORMALIZED TO TA = 25°C-
~
i
-20
0
20
40
60
TA. AMBIENT TEMPERATURE IOC}
TA = 25°C
.....
-
r-.
VCE I 55 V
./
-20
0
20
40
60
TA. AMBIENT TEMPERATURE 1°C}
80
20
l~V
40
60
TA. AMBIENT TEMPERATURE IOC}
60
100
Figure 6. Collector-Emitter Dark Current versus
Ambient Temperature
1000
1000
R~ 11~
VCC
RL
10V
"\
100
~
I"-
10
10
0.2
0.5
10
;::::
100
1
2
5
10
IF. LEO INPUT CURRENT ImAl
1000
100
100
w
:E
"-
1
0.1
./
V
100
Figure 5. Collector-Emitter Voltage versus
Ambient Temperature
.....
. / . / 30V
./
./
./
V
-60 -40
V
./
./
r-....... ........
~
r= NORMALIZED TO: VCE = 10 V
r
.......
60
Figure 4. Output Current versus Ambient Temperature
NORMALIZED TO TA = 25°C
I'---
-60 -40
10
VCC
r-I::
20
50
1
0.1
100
Figure 7. Turn-On Switching Times
0.2
0.5
1
5
10
IF. LEO INPUT CURRENT ImA}
10 V
20
Figure 8. Turn-Off Switching Times
4-88
50
100
MOC8030, MOC8050
WAVEFORMS
TEST CIRCUIT
IF = SmA
::-1
-+
IN~-+
~
I
..J
Vee = IOV
I
.~loon
1
I
INPUT PULSE
I
I
I
:
1
l~ ~-----I-Z---90%--:-1______ L_1 ____ OUTPUT PULSE
~TPUT
~
I I
--<+\1I
Ion
Figure 9. Switching Times
4-89
~tr
-+l:I
I I I
~ :+-t,
I
--+!
,I
I :-1011
MOC8060
6·Pin DIP Optoisolator
AC Input/Darlington Output
[CTR = 1000% MinI
STYLE B PLASTIC
This device consists of two gallium arsenide infrared emitting diodes connected in
inverse-parallel, optically coupled to a silicon photodarlington detector which has integral
base-emitter resistor.
Applications
• Detection or Monitoring of ac Signals
• Interfacing and coupling systems of
different potentials and impedances
• Phase Feedback Controls
• Solid State Relays
• General Purpose SWitching Circuits
MAXIMUM RATINGS (TA = 25"C unless otherwise noted)
I
Rating
I Symbol I
Value
Unit
INPUT LED
Forward Current -
Continuous
IF
60
IF(pk)
1
A
Po
120
1.41
mW
mW/"C
Collector-Emitter Voltage
VCEO
50
Volts
Emitter-Base Voltage
VECO
7
Volts
Forward Current- Peak (PW= 100 I's, 120 pps)
LED Power Dissipation @ TA = 25"C
Derate above 25"C
mA
STANDARD THRU HOLE
CASE 130A-04
~
"T" LEADFORM
WIDE SPACED 0.4"
CASE 130D-05
OUTPUT TRANSISTOR
Collector Current -
Continuous
Detector Power DisSipation @ TA = 25"C
Derate above 25"C
IC
150
mA
PD
150
1.76
mW
mWFC
VISO
3750
Vac
150
2.94
mW
mW/"C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 13OC-04
(STANDARD PROFILE)
TOTAL DEVICE
Input-Output Isolation Voltage (1)
(60 Hz, 1 sec. Duration)
Total Device Power Dissipation @ TA = 25"C
Derate above 25"C
Po
Ambient Operating Temperature Range (2)
TA
-55 to +100
"C
Tstg
-55 to +150
"C
TL
260
"C
Storage Temperature Range
Lead Soldering Temperature
(1/16" from case, 10 sec. duration)
CASE 130F-04
(LOW PROFILE)
SCHEMATIC
(1) Input-Output Isolation Voltage, Vise. IS an Intemal deVice dlelectnc breakdown rating.
For this test, Pins 1 and 2 are oommon, and Pins 4, 5 and 6 are common,
(2) Refer to Quality and Re"ability Section for test information.
PIN 1.
2.
3.
4.
5.
6.
4-90
INPUT LED
INPUT LED
N.C.
EMITTER
COLlECTOR
BASE
MOC8060
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Symbol
Min
(VCE = 10 V, TA = 25°C)
ICEOI
(VCE = 10 V, TA = 100°C)
ICE02
Characteristic
Typ
Max
Unit
-
-
0.001
rnA
-
0.1
rnA
V(BR)CEO
50
65
V(BR)CBO
55
75
-
7.0
-
100
5.0
-
-
rnA
0.33
-
3.0
-
INPUT LEAD
Forward Voltage (IF = 10 rnA)
Capacitance (V = 0, I = 1.0 MHz)
DARLINGTON OUTPUT
Collector-Emiller Dark Current
Collector-Emiller Breakdown Voltage (IC = 1.0 rnA)
Collector-Base Breakdown Voltage (IE = 100 I'A)
Collector-Em iller Capacitance (I = 1.0 MHz, VCE = 0)
CCE
V
V
pF
COUPLED
Output Collector Current (IF = 10 rnA, VCE = 10 V)
(IF = 1.0 rnA, VCE = 10 V)
IC
Output Current Symmetry (Note 1)
( IC at IF=-10 rnA, VCE = 10 V
IC atiF = +10 rnA, VCE = 10 V )
Collector-Emiller Saturation Voltage (IC = 100 rnA, IF = lOrnA)
-
VCE(sat)
Isolation Voltage (I = 60 Hz, t = 1 sec.)
VISO
3750
Isolation Resistance (V 1-0 = 500 V)
RISO
1011
Isolation Capacitance (VI-O = 0, I = 1.0 MHz)
CISO
-
-
2.0
-
-
Q
0.2
-
pF
V
Vac(rms)
Note 1: This specification guarantees thai the higher of the two Ie readings will be no more than 3 times the lower at IF = 10 rnA.
10
100
NORMALIZED TO: VCE = 5 V, IF = 1 rnA (3OOIlS PULSES)
~
a::
a::
G
r- NORMALIZED TO: TA = 25°C
10
5
§
1
/
i
<>
-
1
0.1
0.1
10
100
1000
If, IRED INPUT CURRENT (rnA)
TA, AMBIENT TEMPERATURE
Figure 1. Output Current versus Ambient Temperature
4-91
Figure 2. Output Current versus Input Current
MOC8060
100000
.-- ---.._.- ..--..--.. _.....-- .---.. V E = 80 V·-- -. -...--..
.10000
:[
!z
w
1000
a:
a:
._. ___..... __.._ ..... L_ ...'lL ____
100
::>
L .._..
(.')
><
~
~VCE=10V
10
6w
~
1
10
VCE, COLLECTOR-EMmER VOLTAGE (VOLTS)
0.1 '----'---'---'---'----'---'---'---'---'
10
20
30
40
50
60
70
80
90 100
TA, AMBIENT TEMPERATURE (OC)
100
Figure 3. Output Current versus Collector-Emitter Voltage
Figure 4. Collector-Emitter Dark Current
versus Temperature
MINIMUM PEAK, OUTPUT CURRENT
MAXIMUM PEAK, OUTPUT CURRENT-
0.5
-0.5
INPUT CURRENT WAVEFORM
-1
Figure 5. Output Characteristics
10
\
---
\
\
\
1\
r-
Ii)
!:i
~
\
w
(!)
t3
~
!:;
Q.
;;:;
'\
,:J=
NORMAUZEDTO: IF= 10mA, RL = 1000VCC= 5 V
0.1
U
1
W
Ion +'off, TOTAL SWITCHING SPEED (NORMAUZED)
Figure 6. Input Current versus Total Switching Speed
4-92
- ---
2.8
I
I
2.4
2
PULSE OR DC
1.6
/'
1.2
I
0.8
0.4
0
-0.4
-0.8
-1.2
./
-1.6
-2
-2.4
,
-2.8
-1000 -BOO -600 -400 -200
0
200 400 600 800 1000
If, INSTANTANEOUS INPUT CURRENT (rnA)
-- --- PU\.sEO~LY
RL=100::'l ;::: RL = 100 0 1 \ - RL = 1 kG
- ---
Figure 7. Input Voltage versus Input Current
MOC8060
RF
NC
120VAC
50-60 Hz
MOCB06O
n - - - - - - - o VCC
4 n - - - - - - - - Vout
Typical Component Values
RL
25000
C
50llF
RF
VCC
Vout
24 k.Q
5 Volts
4.4 Volts
Rl
Component values may vary depending upon
the details of the actual application. The resistor
RL represents the load device. RF represents
the limiting resistor for the input diodes.
Figure 8. Typical Application Circuit: AC to DC Detector Circuit
4-93
C
MOTOROLA
SEMICONDUCT~O!!R~~~~~~~----
TECHNICALDATA
I~I
WE
I I®I
I
,
4
10
~
~
o
;;;
I
~ 0.01
1000
55'C THR
V
~ ==i+ 25' C
I-- t 70~C
I-- +100'C-I"T
0.5
,
2
5
10
IF, LEO INPUT CURRENT (rnA)
20
50
Figure 2. Output Current versus Input Current
Figure 1. LED Forward Voltage versus Forward Current
4-95
MOC8080
140
I
I
-
I
~10~A
-
0
I
~
g§
:::>
u
5f
v
~
~
I
V
I
1
0.7
O. 5
...8
~ o.2
2mA
1 mA
o y
o
NORMALIZED TO TA = 25"(;-
~
I
2345678
VCE. COLLECTOR·EMlffiR VOLTAGE IVOLTS)
0. o.1
.Y
10
-m
-00 -40
m
0
40
00
00
100
TA. AMBIENT TEMPERATURE 1°C)
Figure 3. Collector Current versus
Collector-Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
~
:;j! 1.3
:0
~
1.2
w
~
1.1
I,
'"
!:;
~
1
~
0.9
~
0.8
~
0.7
~
......
~
........
= 25°C
L
r-.
VCE
r--
-m
m
0
40
00
TA. AMBIENT TEMPERATURE 1°C)
~
00
L
L
L
55 V
./
./
-00 -40
V
V
L.
IL IL 30V
/'
8
./
I~V
~
100
40
20
00
100
80
TA. AM81ENT TEMPERATURE 1°C)
Figure 5. Collector-Emitter Voltage versus
Ambient Temperature
Figure 6. Collector-Emitter Dark Current versus
Ambient Temperature
1000
1000
R~ ~ lobo
VCC
RL
10V
'\
100
j
"
I"
100
0.2
0.5
1
2
5
10
IF. LEO INPUT CURRENT ImA)
1000
100
100
ll!
;::
io
1
0.1
TA
L
:0
~
1= NORMALIZED TO: VCE = 10 V
NORMALIZED TO TA = 25"<:
10
10
,...
20
VCC
50
1
0.1
100
Figure 7. Turn-On Switching Times
0.2
0.5
1
2
5
10
IF. LEO INPUT CURRENT ImA)
10V
20
Figure 8. Turn-Off Switching Times
4-96
50
100
MOC8080
14
20
IB=O.7pA
HF'-O
16
0.6pA
I"
0.4pA
l/'
0.3pA
",. Jc~
14
0.5pA
'L
II 1111
II IIII
18
f = 1 MHz
'"
.......
r-.
0.2pA
/'
r-....
0.1 p.A
18
C1E
CEB
I
4
6
8
10
12
14
16
VCE, COLLECTOR·EMlffiR VOLTAGE (VOLTS)
20
0.05
0.1
0.2
0.5
1
2
5
VE, VOLTAGE (VOLTS)
10
20
Figure 10. Detector Capacitances versus Voltage
Figure 9. DC Current Gain (Detector Only)
WAVEFORMS
TEST CIRCUIT
INPUT PULSE
L
--.lI
I
I
I
I
I
IF=5mA~ -+
lWk~-----I-l!----
9Wk--:.l- ______L_1 ____ OUTPUT PULSE
IN~-+
III
.......: I-tr
I
I
Ion - - : : Figure 11. Switching Times
4-97
I
I I
I
I I
I :--- toft
--t-->l
~
i+-tf
50
MOC8100
&·Pin DIP Optoisolator
Transistor Output
[CTR = 50% Min]
STYLE 1 PLASTIC
The MOC8100 device consists of a gallium arsenide infrared emitting diode optically
coupled to a monolithic silicon phototransistor detector. It is designed for applications
requiring low LED drive current.
• High Current Transfer Ratio Guaranteed at 1 mA LED Drive Level
Applications
• Appliances, Measuring Instruments
• General Purpose Switching Circuits
• Programmable Controllers
• Portable Electronics
• Interfacing and coupling systems of
different potentials and impedances
• Low Power Logic Circuits
• Telecommunications Equipment
MAXIMUM RATINGS (TA = 25'C unless otherwise noted)
I
Rating
I Symbol I
Value
Unit
VR
6
Volts
IF
60
mA
Po
120
mW
1.41
mW/'C
INPUT LED
Reverse Voltage
Forward Current -
Continuous
LED Power Dissipation @ TA = 25'C
with Negligible Power in Output Detector
Derate above 25'C
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCEO
30
Volts
Emitter-Base Voltage
VEBO
7
Volts
Collector-Base Voltage
VCBO
70
Volts
IC
150
mA
Po
150
mW
1.76
mW/,C
VISO
7500
Vac
Po
250
2.94
mW
mW/,C
Collector Current -
Continuous
=
Detector Power Dissipation @ TA 25'C
with Negligible Power in Input LED
Derate above 25'C
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25'C
Derate above 25'C
Ambient Operating Temperature Range (2)
Storage Temperature Range
Soldering Temperature (10 sec, 1/16" from case)
STANDARD THRU HOLE
CASE 730A-114
"T" LEADFORM
WIDE SPACED 0,4"
CASE 7300-05
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
CASE 730F-04
(LOW PROFILE)
SCHEMATIC
TA
-55 to +100
'C
Tstg
-55 to +150
'C
TL
260
'c
(1) Isolation surge voltage IS an Internal device dlelectnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and Reliability Section for test infonnation.
4-98
10----. ~65
20---1\
3D-PIN 1.
2.
3.
4.
5.
6.
4
LED ANODE
LED CATHODE
N.C.
EMITTER
COLLECTOR
BASE
MOC8100
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
I
Characteristic
Symbol
Min
Typ
Max
Unit
1.15
1.3
1.05
1.4
Volts
INPUT LED
Reverse Leakage Current (VR = 6 V)
IR
Capacitance (V = 0 V, f = 1 MHz)
CJ
-
ICEO
ICEO
Forward Voltage (IF = 10 mAl
TA = 0-70"C
TA = -55°C
TA = loo·C
VF
0.05
10
J1.A
18
-
pF
-
3
25
nA
-
0.05
50
J1.A
0.2
10
-
Volts
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
(VCE = 5 V, TA = 25·C)
(VCE = 30 V, TA = 70·C)
Collector-Base Dark Current (VCB = 5 V)
ICBO
nA
Collector-Emitter Breakdown Voltage (lC = 1 rnA)
V(BR)CEO
30
45
Collector-Base Breakdown Voltage (lC = 100 J1.A)
V(BR)CBO
70
100
-
Volts
V(BR)EBO
7
7.8
-
Volts
600
-
-
Emitter-Base Breakdown Voltage (IE = 100
JJ.A)
DC Current Gain (lC = 1 rnA, VCE = 5 V)
hFE
Collector-Emitter Capacitance (f = 1 MHz, VCE = 0)
CCE
-
Collector-Base Capacitance (f = 1 MHz, VCB = 0)
CCB
-
19
Emitter-Base Capacitance (f = 1 MHz, VEB = 0)
CEB
-
9
7
pF
pF
pF
COUPLED
Output Collector Current
(IF = 1 rnA, VCE = 5 V)
(IF = 1 rnA. VCE = 5V, TA = Oto +70·C)
IC
1
0.6
0.22
0.5
Volts
9
20
J1.S
7
20
J1.S
5.6
Rise Time (lC = 2 rnA, VCC = 10 V, RL = 100 n, Figure 11)
tr
-
Fall Time (lC = 2 rnA, VCC = 10 V, RL = 100 n, Figure 11)
tf
-
VISO
7500
Isolation Resistance (V = 500 V)
RISO
1011
Isolation Capacitance (V = 0 V, f = 1 MHz)
CISO
Collector-Emitter Saturation Voltage (lC = 100 J1.A, IF = 1 rnA)
VCE(sat)
Turn-On Time (lC = 2 rnA, VCC = 10 V, RL = 100 n, Figure 11)
ton
Turn-Off Time (lC = 2 rnA, VCC = 10 V, RL = 100 n, Figure 11)
toff
Isolation Voltage (f = 60 Hz, t = 1 sec)
rnA
-
0.5
0.3
3.8
-
0.2
-
-
J1.S
J1.S
Vac(pk)
-
n
2
pF
TYPICAL CHARACTERISTICS
I
- - - - - PULSE ONLY
- - - PULSE OR DC
I
u; 1.8
'::;
I
g
"
w
~ 1.6
!:i
rr-
I
-
I'
NORMALIZED TO:
IF
10 rnA
L
1
I
g
Ii!
~
1.4
12
!f 1.2
1
/
r- T~=~
f- ..,.
1
;'
1
/
~
t-'"
100·C
i--"'"
..... ~
10
100
IF, LEO FORWARD CURRENT (rnA)
1000
0.5
1
2
5
10
IF, LEO INPUT CURRENT (rnA)
20
50
Figure 2. Output Current versus Input Current
Figure 1. LED Forward Voltage versus Forward Current
4-99
MOC8100
28
24
I-"'"
V
I -+~~10~A-
I
o
25°C-
~
V
:::>
5mA
~
1
t3
OJ
~ 0.5
I-'
8
I V
/1
/I.
o
o
NORMALIZED TO TA
~
>--
/
/
7
o
I-""
/'
10
t:;
5 0,2
2 mA---=
lmA-
o
.y 0.1
2345678
VCE. COLLECTOR·EMITTER VOLTAGE {VOLTSI
10
-60
Figure 3. Collector Current versus
Collector-Emitter Voltage
-40
80
-20
0
20
40
60
TA. AMBIENT TEMPERATURE {OCI
100
Figure 4. Output Current versus Ambient Temperature
100
50
20 -
-RL
I--- RL
20
-+-:+t
1 t--
'r
I'::l!.
'r
"\.
~
1
2
5
10
IF. LED INPUT CURRENT {mAl
20
50
100
Figure 6. Rise and Fall Times
,
100
70
50
j
10 V
VCC
100
0.5
0.2
Figure 5. Dark Current versus Ambient Temperature
100
70
50
If
1000
I
1
0.1
100
80
40
60
TA. AMBIENT TEMPERATURE {OCI
10V
VCC
10 V
VCC
---
~
!;;g
F
z
10
~
7
i'2
5
9
3
~bt
20
"
F
i±:
100
<;>
~
--
10
"
'~"
"-
S'
~ "1
0.1
0.2
"
~
0.5 0.7 1
2
5 7 10
20
IF. LED INPUT CURRENT {mAl
/'
-_.
20 1---
~ ~ 10100
10
7
5
1---
/'
._.
100
t
--
1
50 70100
0.1
Figure 7. Turn-On Switching Times
0.2
2
5 7 10
0.5 0.7 1
IF. LED INPUT CURRENT {mAl
20
Figure 8. Turn-Off Switching Times
4-100
50 70100
MOC8100
0
IF
0
IB
r
V
7,.A
18
6,.A
--
16
e
'
~.
~ 14
5,.A
~
12
z
;'" 10
4,.A
~
3,.A
18
o
0.05
20
0.1
0.2
I
I
1
2
5
V, VOLTAGE (VOLTS)
~
~
I
l~fRL=100n
10
20
INPUT PULSE
I
I
I
,
I
10%]A-----I-Z----
90%--:-i-,------L _1 ____
OUTPUT
\ 'I
=
0.5
-.J
Vee = 10V
INPUT CURRENT ADJUSTED
'=:::::
WAVEFORMS
TEST CIRCUIT
TO ACHIEVE Ie;
:::...
Figure 10. Capacitances versus Voltage
Figure 9. DC Current Gain (Detector Onlvl
IN:J:::
I'
-I-
eyE
2,.A
4
8
10
12
14
16
VeE, eOLLECTOR·EMlffiR VOLTAGE IVOLTSJ
I'
I'
eEB
U
1,.A
f=1MHz
ec1'
I
I
......: l+-t,
=
I
I
ton~:--
2 rnA.
Figure 11. Switching Times
4-101
I
I I
I
I
--t-oi l+-tf
~
I
I
:--toff
OUTPUT PULSE
50
MOC8101*
[CTR = 50-80%]
MOC81 02*
[CTR = 73-117%]
MOC8103
[CTR = 108-173%]
MOC8104
6·Pin DIP Optoisolators
For Power Supply Applications
(No Base Connection)
[CTR = 160-256%]
*Motorola Preferred Devices
The MOC8101, MOC81 02, MOC8103 and MOC8104 devices consist of a gallium
arsenide LED optically coupled to a silicon phototransistor in a dual-in-line package.
STYLE 3 PLASTIC
• Closely Matched Current Transfer Ratio (CTR)
• Narrow (CTR) Windows that translate to a Narrow and Predictable Open Loop Gain
Window
• Very Low Coupled Capacitance along with No Base Connection for Minimum Noise
Susceptability
Applications
• Switchmode Power Supplies (Feedback Control)
• AC Line/Digital Logic Isolation
MAXIMUM RATINGS (TA
I
STANDARD THRU HOLE
CASE 730A-04
• Interfacing and coupling systems of
different potentials and impedances
=25°C unless othelWise noted)
Rating
I Symbol I
Value
Unit
mA
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
INPUT LED
FOlWard Current -
Continuous
FOlWard Current -
Peak (PW = 100 IJ.S, 120 pps)
IF
60
IF(pk)
1
A
Reverse Voltage
VR
6
Volts
LED Power Dissipation @ TA = 25°C
Derate above 25°C
Po
120
1.41
mW
mW/"C
Collector-Emitter Voltage
VCEO
30
VollS
Emitter-Collector Voltage
VECO
7
VollS
IC
150
mA
Po
150
1.76
mW
mW/"C
VISO
3750
7500
Vac(rms)
Vac(pk)
Po
250
2.94
mW
mW/"C
Ambient Operating Temperature Range (2)
TA
-55 to +100
°C
Slbrage Temperature Range
Tstg
-55 to +150
°C
2
TL
260
°C
3
OUTPUT TRANSISTOR
Collector Current -
Continuous
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-Q4
(STANDARD PROFILE)
CASE 730F-04
(LOW PROFILE)
TOTAL DEVICE
Input-Output Isolation Voltage (1)
(f =60 Hz, t =1 sec.)
Total Device Power DiSSipation @ TA =25°C
Derate above 25°C
Lead Soldering Temperature
(1/16" from case, 10 sec. duration)
(1) Input-output Isolation Voltage, VISO. Is an Internal device dielectriC breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(2) Refer to Quality and ReHabll1ty Section for test information.
4-102
SCHEMATIC
1~6
:\
NC
PINI.
2.
3.
4.
5.
6.
ANODE
CATHODE
NO CONNECTION
EMITTER
COLLECTOR
NO CONNECTION
5
4
MOC8101, MOC8102, MOC8103, MOC8104
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
I
I
Characteristic
Typ
Max
1.0
1.15
1.5
V
-
0.05
10
pA
-
18
-
pF
Symbol
Min
VF
IR
C
Unit
INPUT LED
Forward Voltage (IF
=
10 rnA)
Reverse Leakage Current (VR
= 5.0 V)
Capacitance
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
=
=
(VCE
(VCE
Collector-Emitter Breakdown Voltage (lC
10 V, TA
= 25'C)
= 100'C)
ICEOI
ICE02
1.0 rnA)
/LA)
= 1.0 MHz, VCE = 0)
Emitter-Collector Breakdown Voltage (IE
Collector-Emitter Capacitance (f
=
=
10 V, TA
100
-
1.0
50
nA
1.0
-
pA
V(BR)CEO
30
45
V(BR)ECO
7.0
7.8
-
-
7.0
-
CCE
.V
V
pF
COUPLED
Output Collector Current
(IF = 10 rnA, VCE = 10 V)
MOC8101
MOC8102
MOC8103
MOC8104
= 500 /LA, IF = 5.0
= 2.0 rnA, VCC = 10 V, RL = 100 0)
Turn-Off Time (lC = 2.0 rnA. VCC = 10 V, RL = 1000)
Rise Time (lC = 2.0 rnA, VCC = 10 V, RL = 1000)
Fall Time (lC = 2.0 rnA, VCC = 10 V, RL = 1000)
Isolation Voltage (f = 60 Hz, t = 1.0 sec.)
Isolation Resistance (VI-O = 500 V)
Isolation Capacitance (VI-O = 0, f = 1.0 MHz)
Collector-Emitter Saturation Voltage (lC
5.0
7.3
10.8
16
6.5
9.0
14
20
8.0
11.7
17.3
25.6
VCE(sat)
-
0.15
0.4
V
ton
-
7.5
20
",s
toff
-
5.7
tr
-
3.2
4.7
IC
rnA)
Turn-On Time (lC
tf
-
VISO
3750
-
RISO
1011
-
CISO
-
0.2
rnA
20
",s
-
"'s
"'s
Vac(rms)
0
pF
TYPICAL CHARACTERISTICS
2
,
-~~~-~JJ~~ON[yl
I
- - - - PULSE OR DC
~I
/
is
~::a;
,
NORMALIZED TO:
IF = 10mA
0:
j,
a
I
.....
z
~
/'
1
~
0:
::>
I
u
0:
~
I
I-TA = -55'C
2
1
"i~
~
HI
II1O'C
~
§ o.1
~
"
au
~
i"""
I!:
::>
a
~
10
lOll
IF, LED FORWARD CUAR£NT (mA)
1000
.9 0.01
0.5
10
IF, LED INPUT CURRENT (mAl
20
Figure 2. Output Current versus Input Currant
Figure 1. LED Forward Voltage versus Forward Current
4-103
50
MOC8101, MOC8102, MOC8103, MOC8104
I
1
IF
~
20
~
16
a:
.,..,..
l=!
/'
/
JM
"...
/
9
-
./
~ 12
8
~
a
= lOrnA
:.....:::
o lIT
o
--
M?C8104
I-""
MO,C8103
M0C8102
r--
MOC8101
2
I
1
6
8
-~
10
-~
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS!
W
= NORMALIZED TO:
100
Iffio
=
==
VCE
TA
10V
25°C
16
r-.
CcE
-r-
U
~-
-
::::;;; ~10V
6
~
1= 1 MHz
12
§
30 V
UZ
u
O. 1
o
w
~
W
TA, AMBIENT TEMPERATURE I"CI
~
~14
~
~~
~
!IIII
;::!: 10
~VCE
w
0
~
~
TA, AMBIENT TEMPERATURE (OC!
~~D
18
~ ~10
~~
-w
Figure 4. Output Current versus Ambient Temperature
Figure 3. Output Current versus
Collector-Emitter Voltage
!z
~
i3
25OC-
NORMALIZED TO TA
00
100
Figure 5. Dark Current versus Ambient Temperature
o
0.05
0.1
0.2
0.5
1
2
5
V, VOLTAGE (VOLTS!
10
Figure 6. Capacitance versus Voltage
4-104
20
50
MOC8111*
=
MOC8112
=
MOC8113
6·Pin DIP Optoisolators
Transistor Output
(No Base Connection)
[eTR
20% Min]
[CTR
50% Min]
[CTR = 100% Min]
-Motorola Preferred Device
STYLE 3 PLASTIC
The MOC8111, MOC8112 and MOC8113 devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon phototransistor detector. The
internal base-to-Pin 6 connection has been eliminated for improved noise immunity.
Applications
• Appliances, Measuring Instruments
• Regulation and Feedback Control
• Programmable Controllers
• InterfaCing and coupling systems of
different potentials and impedances
• General Purpose Switching Circuits
MAXIMUM RATINGS (TA = 25'C unless otherwise noted)
I
Rating
I Symbol
Value
Unit
INPUT LED
Reverse Voltage
Forward Current -
Continuous
=
LED Power Dissipation @ TA 25'C
with Negligible Power in Output Detector
Derate above 25'C
Volts
VR
6
IF
60
mA
Po
120
mW
1.41
mWI"C
30
Volts
Volts
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCEO
Emitter-Collector Voltage
VECO
7
IC
150
mA
Po
150
mW
1.76
mWI"C
Collector Current -
Continuous
Detector Power Dissipation @ TA = 25'C
with Negligible Power in Input LED
Derate above 25'C
~
"T" LEADFORM
WIDE SPACED 0.4"
CASE 730D-05
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-04
(STANDARD PROFILE)
CASE 730F-04
(LOW PROFILE)
TOTAL DEVICE
Isolation Surge Voltage (1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA
Derate above 25'C
STANDARD THRU HOLE
CASE 730A-04
=25'C
Ambient Operating Temperature Range (2)
Storage Temperature Range
Soldering Temperature (10 sec, 1116" from case)
VISO
7500
Vac
Po
250
2.94
mW
mWI"C
SCHEMATIC
'c
'c
'c
2o-J\ ........-----0 5
TA
-55 to +100
Tstg
-55 to +150
TL
260
(1) Isolation surge voltage IS an Internal device dielectriC breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
10---.
3D-
---a 6
'----04
(2) Refer to Quality and Reliability Section for test infonnation.
PIN 1.
2.
3.
4.
LED ANODE
LED CATHODE
N.C.
EMITTER
5. COLLECTOR
6. N.C.
4-105
MOC8111, MOC8112, MOC8113
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
I
I
Characteristic
Symbol
Min
Typ
Max
Unit
1.15
1.3
1.05
1.5
Volts
INPUT LED
Forward Voltage (IF = 10 rnA)
TA = 25'C
TA = -55'C
TA = 100'C
-
VF
-
-
Reverse Leakage Current (VR = 6 V)
IR
-
0.05
10
pA
Capacitance (V = 0, f = 1 MHz)
CJ
-
18
-
pF
1
50
nA
-
OUTPUT TRANSISTOR
ICEO
-
1
-
pA
Collector-Emitter Breakdown Voltage (lC = 1 rnA)
V(BR)CEO
30
45
-
Volts
Emitter-Collector Breakdown Voltage (IE = 100 pAl
V(BR)ECO
7
7.8
-
Volts
Collector-Emitter Capacitance (f =.1 MHz, VCE = 0)
CCE
-
7
-
pF
2
5
10
5
10
20
-
rnA
Collector-Emitter Dark Current
ICEO
(VCE = 10 V, TA = 25'C)
(VCE = 10V, TA = 100'C)
COUPLED
Output Collector Current
(IF = 10 rnA, VCE = 10 V)
MOC8111
MOC8112
MOC8113
IC
-
toff
-
tr
-
3.2
tf
-
4.7
-
VISO
7500
-
-
Isolation Resistance (V = 500 V)
RISO
1011
-
-
n
Isolation Capacitance (V = 0, f = 1 MHz)
CISO
-
0.2
-
pF
Collector-Emitter Saturation Voltage (lC = 500 pA, IF = 10 rnA)
VCE(sat)
n, Figure 10)
Turn-Off Time (lc = 2 rnA, VCC = 10 V, RL = 100 n, Figure 10)
Rise TIme (lC = 2 rnA, VCC = 10 V, RL = 100 n, Figure 10)
Fall Time (lC = 2 rnA, VCC = 10 V, RL = 100 n, Figure 10)
ton
Turn-On Time (lC = 2 rnA, VCC = 10 V, RL = 100
Isolation Voltage (f = 60 Hz, t = 1 sec)
0.15
0.4
Volts
7.5
20
J.'s
5.7
20
J.'s
J.'s
Vac(pk)
J.'s
TYPICAL CHARACTERISTICS
2
-~~~_I~JJL~~ON~/
I
I
~ 1.8 - - - - PULSE OR DC
.I /1
~
~
g
c
~
!/
1.6
1.4
lHi
NORMALIZED TO:
IF - lOrnA
,/
1
I
I
I
~ -JA-L= ill
~1.
21j""
f-f-f--
I
2~
l00'C
......
,/
V
1
,/
..... 1-"
10
100
IF, LED FORWARD CURRENT (mAl
1000
0.5
1
2
5
10
IF, LED INPUT CURRENT (rnA)
20
50
Figure 2. Output Current versus Input Current
Figure 1. LED Forward Voltage versus Forward Current
4-106
MOC8111, MOC8112, MOC8113
,......,-
28
24
./"
;;[
~
~ 16
aa:
12
8
8
~
/'
/
1/
I /'
~
V
V
--
NORMALIZED TO TA
25'C-
a
a:
~ 0.7
~ 0.5
8
2mA_
lmA-
0
7
~
!Z
!!§
5 mA---=
I
4
10
~
~
I
V
.£ 20
I':!
~=10~A-
5
10
2345678
VCE. COLlECTOR-EMITTER VOLTAGE IVOLTSI
~
0.2
o
~
0.1
-00
-40 -W
0
W
40
00
100
80
TA. AMBIENT TEMPERATURE I'CI
Figure 3. Collector Current versus
Collector-Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
100
!Z
~
:::>
u
~
~ NORMALIZED TO:
VCE
10V
TA 25'C
50
1==
10V
20
a: _
5~
~ Ijj 10
::;:::;
EV
~ ~
CE
30V
RL
10
tf
1000
F
~~
~
VCC
100 t==
"" 5
~
RL
1001
1
t,
r--
~
t,
2
0.1
o
20
60
TA. AMBIENT TEMPERATURE I'CI
1
0.1
100
80
40
0.2
Figure 5. Dark Current versus Ambient Temperature
100
0
0
VCC
0
7
5
1
0.1
100
70
50
10 V
50
100
10V
V
0
7
5
10
"" I""
~
0.2
20
VCC
)'-..RL = 1000
100
2
I'
I
1
2
5
10
IF. LED INPUT CURRENT ImAI
Figure 6. Rise and Fall Times
~~
0
0.5
'\
"~
0.5 0.7 1
2
5 7 10
20
IF. LED INPUT CURRENT ImAI
100
-t
2
1
0.1
50 70100
Figure 7. Turn-On Switching Times
V
0.2
0.5 0.7 1
2
5 7 10
IF. LED INPUT CURRENT ImAI
20
Figure 8. Turn-Off Switching Times
4-107
50 70100
MOC8111, MOC8112, MOC8113
0
cJ
8
"f III= 1 MHz
r.....:
6
u:- 14
E,
~
12
>!'
10
~
8
z
u
i'
i'
CcE
<.S 6
r-
r-
2
o
0.05 0.1
0.2
0.5
1
2
5
10
20
50
V, VOLTAGE (VOLTS)
Figure 9. Capacitances versus Voltage
WAVEFORMS
TEST CIRCUIT
~,."
'"~:: ~'
INPUT CURRENT ADJUSTED
TO ACHIEVE IC = 2 rnA.
I
~
•
I•
-.J
INPUT PULSE
I•
10%]1-----I-Z---90%--:-i-.------L
-r i-l.- ',
111
=
Ion -+II
Figure 10. Switching Times
4-108
I
I
~!
____
I I
~ i-If
.-..:: i.- loff
'I
OUTPUT PULSE
MOC8204*
=
MOC8205
=
MOC8206
6·Pin DIP Optoisolators
High Voltage Transistor Output
(400 Volts)
[CTR
20% Min)
[CTR
10% Min)
[CTR = 5% Min)
""Motorola Preferred Device
STYLE 1 PLASTIC
The MOC8204, MOC8205 and MOC820B devices consist of gallium arsenide infrared
emitting diodes optically coupled to high voltage, silicon, phototransistor detectors in a
standard B-pin DIP package. They are designed for applications requiring high voltage
output and are particularly useful in copy machines and solid state relays.
Applications
• Copy Machines
• Interfacing and coupling systems of
different potentials and impedances
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
Rating
STANDARD THRU HOLE
CASE 730A-04
• Monitor and Detection Circuits
• Solid State Relays
I Symbol
Value
Unit
INPUT LED
Forward Current -
IF
60
mA
Forward Current - Peak
Pulse Width = 1 !'S, 330 pps
Continuous
IF
1.2
Amp
LED Power Dissipation @ TA = 25°C
Derate above 25°C
PD
120
1.41
roW
mW/oC
Collector-Emitter Voltage
VCER
400
Volts
Emitter-Collector Voltage
VECO
7
Volts
Collector-Base Voltage
VCBO
400
mA
IC
100
mA
PD
150
1.76
mW
mW/oC
PD
250
2.94
mW
mWfOC
OUTPUT TRANSISTOR
Collector Current (Continuous)
Detector Power Dissipation
Derate above 25°C
@
TA = 25°C
"T" LEADFORM
WIDE SPACED 0.4"
CASE 7300-05
"S"f'F" LEADFORM
SURFACE MOUNT
CASE 730C-D4
(STANDARD PROFILE)
CASE 730F-04
(LOW PROFILE)
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Operating Temperature Range (2)
TJ
-55 to +100
°c
Storage Temperature Range
Tstg
-55 to +150
°c
Soldering Temperature (lOs)
TL
260
°c
VISO
7500
Vac(pk)
Isolation Surge Voltage
Peak ac Voltage, 60 Hz, 1 Second Duration (1)
SCHEMATIC
(1) Isolation surge voltage IS an Internal device d.electnc breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
PIN 1. ANODE
2. CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
(2) Refer to Quality and Reliability Section for test information.
4-109
MOC8204, MOC8205, MOC8206
ELECTRICAL CHARACTERISTICS
I
Cha~ansdc
Symbol
Min
Typ
Max
Unit
-
10
pA
1.2
1.5
Volts
-
pF
nA
pA
INPUT LED (TA = 25°C unless otherwise noted)
Reverse Leakage Current
(VR = 6V)
IR
Forward Voltage
(IF = lOrnA)
VF
-
Capacitance
(V = 0 V. f
CJ
-
18
-
-
-
100
250
=
1 MHz)
OUTPUT TRANSISTOR (TA
= 25°C and IF = 0 unless otherwIse noted)
Collector-Emitter Dark Current (RBE
(VCE = 300 V)
=
1 Mn)
TA
TA
ICER
= 25°C
= 100°C
Collector-Base Breakdown Voltage
(lc = loopA)
V(BR)CBO
400
-
-
Volts
Collector-Emitter Breakdown Voltage
(lC = 1 rnA. RBE = 1 MO)
V(BR)CER
400
-
-
Volts
Emitter-Base Breakdown Voltage
(IE = 100pA)
V(BR)EBO
7
-
-
Volts
-
-
-
COUPLED (TA
= 25°C unless otherwise noted)
Current Transfer Ratio
(VCE = 10 V. IF = 10 rnA. RBE
CTR
=
20
10
5
MOC8204
MOC8205
MOC8206
1 MO)
%
-
-
Surge Isolation Voltage (Input to Output) (1)
Peak ae Voltage. 60 Hz. 1 sec
VISO
7500
-
-
Volts
Isolation Resistance (1)
(V = 500 V)
RISO
-
1011
-
Ohms
-
-
0.4
Volts
0.2
-
pF
p's
Collector-Emitter Saturation Voltage
(Ie = 0.5 rnA. IF = 10 rnA. RBE = 1 MO)
VCE(sat)
Isolation Capacitance (1)
(V = 0 V. f = 1 MHz)
Turn-On Time
Turn-Off Time
I
I
elSO
Vce
=
10 V. Ie
= 2 rnA.
RL
=
100 0
ton
-
5
-
-
totl
5
-
NOTE: 1. For this test LED Pins 1 and 2 are common and phototransistor Pins 4, 6, and 6 are common.
50
1 20
!Z
!
10
I
~
0.5
0.2
O. 1
1
-
,
1
!Z
~
RBE - 106 0
VCE = 10V
20
I
:::>
IF
20mA
~
IF
10mA
u 10
RBE = loSn
10 V
VCE
TA 25°C
o
~
IF
~mA
-r--
I
5
10
20
IF. LEO INPUT CURRENT (mA)
-60 -40
50
-20
0
20
40
60
TA, AMBIENT TEMPERATURE 1°C)
80
100
Figure 2. Output Current versus Temperature
Figure 1. Output Current versus LED Input Current
4-110
MOC8204, MOC8205, MOC8206
2
40
IF
50mA
f-
0
0
S
RBE
TA
1
IF
1~
I
IF
SmA
~
~ 1. 4
~
300
I
I I
I
I
V
2HH1r
If-M
""'~"
100°C
L....-
10
1000
100
IF. LED FORWARD CURRENT ImA)
Figure 4. Forward Characteristics
Figure 3. Output Characteristics
1000
2somA
"K
I
I
1/·
V-
I--TA ~ -55'C
I
I
,
o
106 !!
2SoC
O.S 1
S 10
50 100
VCE. COLLECTOR·EMITIER VOLTAGE IVOLTS)
IF
/'
1. 6
':;
o
>
0.0 1
0.005
0.1
II
~
~1.
300
~~_I_~ ~ul~l~ ON~Y
~ 1. 8 f- - - - PULSE OR OC
RBE ~ l06n_
VCE ~ 10V
['--..
"'-
..........
VCE
..........
"'-..
0
0
IF
/
~
10mA
IF
'-'-. i--.L
VCE
~
100 V
./
SmA
VCE
I
300 V
./ / /
'l
RBE ~ 106 11
50V
//
/.
0
-60 -40
-20
0
20
40
60
TA. AMBIENT TEMPERATURE lOCI
80
100
W
30
40
50
50
m 60
TA. AMBIENTTEMPERATURE lOCI
00
Figure 6. Dark Current versus Temperature
Figure 5. Collector-Base Current versus Temperature
4-111
~
=
4-112
Section Five
SOIC-8 Small Outline
Optoisolators
MOC205 .................................... 5-2
MOC211 .................................... 5-5
MOC215 .................................... 5-8
MOC221 .................................... 5-11
5-1
MOTOROLA
-
SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
MOC205
(CTR = 4G-4IO%1
Small Outline Optoisolators
MOC206
(CTR = _125%]
Transistor Output
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector, in a surface mountable, small outline,
plastic package. They are ideally suited for high density applications, and eliminate the
need for through-the-board mounting.
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Closely Matched Current Transfer Ratios
• Minimum V(BRICEO of 70 Volts Guaranteed
• Standard SOIC-8 Footprint,with .050" Lead Spacing
• Shipped in Tape and Reel, which Conforms to EIA Standard RS481A
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 Vac (rmsl Guaranteed
• UL Recognized % File #E54915
Ordering Information:
• To obtain MOC205, 206, 207 in Tape and Reel, add R1 or R2 suffix to device numbers
as follows:
R1-500 units on 7" reel
R2-2500 units on 13" reel
• To obtain MOC205, 206, 207 in quantities of 75 (shipped in sleeves) - No Suffix
Marking Information:
• MOC205 = 205
• MOC206 = 206
• MOC207 = 207
10Il-200%]
Motorola Preferred Davie..
STYLE 1 PLASTIC
SMALL OUTLINE
OPTOISOLATORS
TRANSISTOR OUTPUT
CASE 846-01
Applications:
• Feedback Control Circuits
• Interfacing and coupling systems of different potentials and impedances
• General Purpose Switching Circuits
• Monitor and Detection Circuits
MAXIMUM RATINGS (TA
I
MOC207
(CTR =
SCHEMATIC
= 25°C unless otherwise noted)
Rating
I Symbol
Value
Unit
INPUT LED
Forward Current - Continuous
IF
60
mA
IF(pk)
1.0
A
Reverse Voltage
VR
6.0
V
LED Power Dissipation @ TA = 25°C
Derate above 25°C
PD
90
0.8
mW
mWI"C
Collector-Emitter Voltage
VCEO
70
V
Collector-Base Voltage
VCBO
70
V
Emitter-Collector Voltage
VECO
7.0
V
Collector Current - Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Po
150
1.76
mW
mWI"C
Forward Current - Peak (PW = 100 p.s, 120 pps)
OUTPUT TRANSISTOR
(continued)
5-2
1: LED ANODE
2: LED CATHODE
3: NO CONNECTION
4: NO CONNECTION
5:EMlmR
6: COLLECTOR
7: BASE
8: NO CONNECTION
MOC205, MOC206, MOC207
MAXIMUM RATINGS -
continued (TA = 25"C unless otherwise noted)
I
Rating
Symbol
Value
Unit
VI SO
2500
Vac(rms)
Po
150
2.94
mW
mW/"C
"C
TOTAL DEVICE
Input-Output Isolation Voltage (1)
(60 Hz, 1.0 sec. duration)
Total Device Power Dissipation @ TA = 25"C
Derate above 25"C
Ambient Operating Temperature Range
Storage Temperature Range
TA
-55 to +100
Tstg
-55 to + 150
"C
-
260
"c
Lead Soldering Temperature
(1/16" from case, 10 ~ec. duration)
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)
I
I
Characteristic
Typ
Min
Symbol
Max
Unit
INPUT LED
Forward Voltage (IF = 10 mAl
VF
1.5
V
IR
-
1.15
Reverse Leakage Current (VR = 6.0 V)
0.1
100
pA
Capacitance
C
-
18
-
pF
(VCE
ICEOl
-
1.0
50
nA
(VCE
ICE02
-
1.0
-
pA
V(BR)CEO
70
120
-
V
V(BR)ECO
7.0
7.8
-
V
CCE
-
7.0
-
pF
4.0
6.3
10
6.0
9.4
15
8.0
12.5
20
VCE(sat)
-
0.15
0.4
V
ton
-
3.0
p,s
2.8
-
p,s
1.6
-
p,s
OUTPUT TRANSISTOR
= 10 V, TA = 25"C)
= 10 V, TA = 100"C)
Collector-Emitter Breakdown Voltage (lc = 100 pA)
Emitter-Collector Breakdown Voltage (IE = 100 p,A)
Collector-Emitter Capacitance (f = 1.0 MHz, VCE = 0)
Collector-Emitter Dark Current
COUPLED
Output Collector Current
(IF = 10 mA, VCE = 10 V)
MOC205
MOC206
MOC207
= 2.0 mA, IF =
= 2.0 mA, VCC = 10 V, RL = 100!l)
Turn-Off Time (lC = 2.0 mA, VCC = 10 V, RL = 100!l)
Rise Time (lC = 2.0 mA. VCC = 10 V, RL = 100 0)
Fall Time (lC = 2.0 mA, VCC = 10 V, RL = 1000)
Isolation Voltage (f = 60 Hz, t = 1.0 sec.)
Isolation Resistance (VI-O = 500 V)
Isolation Capacitance (VI-O = 0, f = 1.0 MHz)
Collector-Emitter Saturation Voltage (IC
IC
10 mAl
Turn-On Time (IC
(1) Input-Output Isolation Voltage,
Visa.
IS
-
toff
tr
tf
mA
2.2
-
p,s
-
0.2
-
Vaclrms)
1011
-
VISO
2500
RISO
CISO
0
pF
an Internal deVice dielectriC breakdown rating. For thiS test, pinS 1 and 2 are common, and pms 5, 6 and 7
are common.
TYPICAL CHARACTERISTICS
I
- - - - - PULSE'ONLY
- - - PULSE OR DC
en 1.8
/
t=
/1
--
/
!:;
g
/
I
w
~ 1.6
.......
-
1
I
~
.-
~ 1.4
~
fr
NORMALIZED TO:
IF 10mA
r-
.Jf 1.2
Ti
=kffi:
,.
100"C
..,- tfr
1~
1
.......
.......
"
1
-
.......
10
100
IF, LED FORWARD CURRENT (rnA)
=
_.
1000
--
--:
--
0.5
Figure 1. LED Forward Voltage versus Forward Current
1
2
5
10
IF, LED INPUT CURRENT (rnA)
20
50
Figure 2. Output Current versus Input Current
5-3
MOC205, MOC206, MOC207
16
i5 10
u
a:
~
a
f--
V
V
~
u
,
/ V
J~ V
u
....
::>
1=
::>
a
.Y
-
IF = 10mA
V
~
:.-- 'MOC207
z
L---
MOCr06-
f--
MOC205
!l!
a:
::>
u
a:
§
~
....
lk V
o
o
NORMALIZED TO:TA = 25°C -
....~
~
00.1
2345678
VCE, COllECTOR·EMITIER VOLTAGE (VOLTS)
.Y -60
10
-40
-~
Figure 3. Output Current versus Collector-Emitter Voltage
~
00
100
120
--. ~~E~
18
.,,-
f
til
= 1 MHz
16
;'"
;'"
;'"
00
Figure 4. Output Current versus Ambient Temperature
20
;'"
VCE = 70 '!.-----
r-NORMALIZED TO:
VCE = 10V
TA = 25°C
l-
40
~
TA, AMBIENT TEMPERATURE (OC)
30V.,,A'
10 V
./
"'-
./
CCE
./
20
40
60
TA, AMBIENT TEMPERATURE 1°C)
80
2
0.01
100
0.1
1
10
V, VOLTAGE (VOLTS)
Figure 6. Capacitance versus Voltage
Figure 5. Dark Current versus Ambient Temperature
5-4
100
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MOC211
[CTR
Small Outline Optoisolators
= 20% Mini
MOC212
Transistor Output
[CTR
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector, in a surface mountable, small outline,
plastic package. They are ideally suited for high density applications, and eliminate the
need for through-the-board mounting.
• Convenient Plastic SOIC·8 Surface Mountable Package Style
• Standard SOIC-8 Footprint, with .050" Lead Spacing
• Shipped in Tape and Reel, which Conforms to EIA Standard RS481A
'. Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 Vac (rms) Guaranteed
• UL Recognized
File #E54915
Ordering Information:
• To obtain MOC211, 212, 213 in Tape and Reel, add R1 or R2 suffix to device numbers
as follows:
R1-500 units on 7" reel
R2-2500 units on 13" reel
• To obtain MOC211, 212, 213 in quantities of 75 (shipped in sleeves) - No Suffix
= 50% Min]
MOC213
[CTR = 100% Min]
Motorola Preferred Devices
STYLE 1 PLASTIC
SMALL OUTLINE
OPTOISOLATORS
TRANSISTOR OUTPUT
%
Marking Information:
• MOC211 = 211
• MOC212 = 212
• MOC213 = 213
CASE 848-411
Applications:
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Regulation Feedback Circuits
• Monitor and Detection Circuits
SCHEMATIC
MAXIMUM RATINGS (TA = 25'C unless otherwise noted)
I
Rating
I Symbol
Value
Unit
INPUT LED
Forward Current - Continuous
IF
60
mA
IF(pk)
1.0
A
Reverse Voltage
VR
6.0
V
LED Power Dissipation @ TA = 25'C
Derate above 25'C
Po
90
0.8
mW
mwrc
Collector-Emitter Voltage
VCEO
30
V
Collector-Base Voltage
VCBO
70
V
Emitter·Coliector Voltage
VECO
7.0
V
Collector Current - Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25'C
Derate above 25'C
Po
150
1.76
mW
mwrc
Forward Current - Peak (PW = 100 I"s. 120 pps)
OUTPUT TRANSISTOR
(continued)
5-5
1: LED ANODE
2: LED CATHODE
3: NO CONNECTION
4: NO CONNECTION
5:EMlmR
6: COLLECTOR
7: BASE
8: NO CONNECTION
MOC211, MOC212, MOC213
MAXIMUM RATINGS -
continued (TA = 25·C unless otherwise noted)
I
Symbol
Value
Unit
VI SO
2500
Vac(rsns)
Total Device Power Dissipation @ TA = 25·C
Derate above 25·C
PD
150
2.94
mW
mWI'C
Ambient Operating Temperature Range
TA
-55to +100
·C
Tstg
-55 to + 150
·C
-
260
·C
Rating
TOTAL DEVICE
Input-Output Isolation Voltage (1)
(60 Hz, 1.0 sec. duration)
Storage Temperature Range
Lead Soldering Temperature
(1116" from case, 10 sec. duration)
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
I
I
Characteristic
Min
Symbol
Typ
Max
Unit
INPUT LED
Forward Voltage (IF = 10 mAl
VF
-
1.15
1.5
V
Reverse Leakage Current (VR = 6.0 V)
IR
0.1
100
JJ.A
Capacitance
C
-
18
-
pF
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
(VCE = 10 V, TA = 25·C)
ICEOI
(VCE = 10 V, TA = 100·C)
ICE02
-
1.0
50
nA
1.0
-
JJ.A
Collector-Emitter Breakdown Voltage (lC = 100 p.A)
V(BR)CEO
30
90
-
V
Emitter-Collector Breakdown Voltage (IE = 100 p.A)
V(BR)ECO
7.0
7.8
CCE
-
7.0
-
pF
IC
2.0
5.0
10
6.5
9.0
14
-
mA
-
0.15
0.4
V
7.5
-
p.s
p.s
Collector-Emitter Capacitance (f = 1.0 MHz, VCE = 0)
V
COUPLED
Output Collector Current
(IF = 10 mA, VCE = 10 V)
MOC211
MOC212
MOC213
toff
-
5.7
-
Rise Time (lC = 2.0 mA, VCC = 10 V, RL = 10011)
tr
-
3.2
-
Fall Time (lC = 2.0 mA. VCC = 10 V, RL = 10011)
tf
-
4.7
Collector-Emitter Saturation Voltage (lC = 2.0 mA, IF = 10 mAl
VCE(sat)
Turn-On Time (lC = 2.0 mA, VCC = 10 V, RL = 10011)
ton
Turn-Off Time (lC = 2.0 mA, VCC = 10 V, RL = 10011)
Isolation Voltage (f = 60 Hz, t = 1.0 sec.)
VISO
2500
Isolation Resistance (VI-O = 500 V)
RISO
1011
Isolation Capacitance (VI-O = 0, f = 1.0 MHz)
CISO
-
-
0.2
p.s
-
p.s
Vac(rms)
n
pF
(11Input·Output Isolation Voltage, VISO, IS an Internal deVice dielectric breakdown rating. For this test, pinS 1 and 2 are common, and pinS 5, 6 and 7
are common.
TYPICAL CHARACTERISTICS
,
2
- - - - - PULSE'ONLY
- - - PULSE OR DC
I
~ 1.8
,
~
w
~
~
1.6
~
o
I
liZ
10
f=
f-
~
~
NORMALIZED TO:
IF 10mA
......
I
::>
u
~
~ 1.4
~
:r
I
~
'
I'
f-
!f 1.2
1 f- 1"
1
......
......
Ti=~
~
100"C
'"
~
/
~
8
'3
...... ~
5o
I---"
10
100
IF, LEO FORWARD CURRENT {mAl
o. I
9
1000
Figure 1. LED Forward Voltage versus Forward Current
0.01
0.5
I
2
5
10
IF, LEO INPUT CURRENT {mAl
20
50
Figure 2. Output Current versus Input Current
5-6
MOC211, MOC212, MOC213
aE:,j
16
IF
~
10 mA
/'
/
.,/"
IV: ....-Jk V
/'
--
-
~
-
~ I-- MOC213
is
~
!'"
MOCf2-
~
MOC211-
~
5<)0,1
2345678
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-
10
Figure 3. Output Current versus Collector-Emitter Voltage
-60
-w
w
~
60
TA, AMBIENT TEMPERATURE (OC)
20
14
f
~
III
1 MHz
"
~
z 12
~
U 10
30V
§
U
CCE
r-
~10V
r-
1
20
120
16
1
7
100
00
_~~E~
18
10V
25°C
~
=VCE
-40
Figure 4, Output Current versus Ambient Temperature
= NORMALIZED TO:
VCE
TA
NORMALIZED TO:TA ~ 25°C -
~
1
=
==
10
40
60
TA, AMBIENT TEMPERATURE 1°C)
80
2
0,01
100
0,1
1
10
V, VOLTAGE IVOLTS)
Figure 5, Dark Current versus Ambient Temperature
Figure 6, Capacitance versus Voltage
5-7
100
-
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
MOC215
[CTR = 20% Min]
Small Outline Optoisolators
MOC216
[CTR = 50% Min]
Transistor Output (Low Input Current)
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector, in a surface mountable, small outline,
plastic package. They are ideally suited for high density applications, and eliminate the
need for through-the-board mounting.
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Low LED Input Current Required, for Easier Logic Interfacing
• Standard SOIC-8 Footprint, with .050" Lead Spacing
• Shipped in Tape and Reel, which Conforms to EIA Standard RS481A
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 Vac (rms) Guaranteed
• UL Recognized
File #E54915
Ordering Information:
• To obtain MOC215, 216, 217 in Tape and Reel, add R1 or R2 suffix to device numbers
as follows:
R1-500 units on 7" reel
R2-2500 units on 13" reel
• To obtain MOC215, 216, 217 in quantities of 75 (shipped in sleeves) - No Suffix
MOC217
[CTR
= 100% Min]
Motorola Preferred Devices
STYLE 1 PLASTIC
SMALL OUTLINE
OPTOISOLATORS
TRANSISTOR OUTPUT
%
Marking Information:
• MOC215 = 215
• MOC216 = 216
• MOC217 = 217
CASE 846-01
Applications:
• Low power Logic Circuits
• Interfacing and coupling systems of different potentials and impedances
• Telecommunications equipment
• Portable electronics
SCHEMATIC
MAXIMUM RATINGS (TA = 25'C unless otherwise noted)
I
Rating
I Symbol
Value
Unit
INPUT LED
Forward Current - Continuous
IF
60
mA
IF(pk)
1.0
A
VR
6.0
V
Po
90
O.B
mW
mW/'C
Collector-Emitter Voltage
VCEO
30
V
Collector-Base Voltage
VCBO
70
V
Emitter-Collector Voltage
VECO
7.0
V
Collector Current - Continuous
IC
150
mA
Detector Power Dissipation @ TA = 2S'C
Derate above 2S'C
Po
150
1.76
mwrc
Forward Current - Peak (PW
= 100I'-S, 120 pps)
Reverse Voltage
LED Power Dissipation @ TA
Derate above 25'C
= 25'C
OUTPUT TRANSISTOR
mW
(continued I
5-8
1: LED ANODE
2: LED CATHODE
3: NO CONNECTION
4: NO CONNECTION
5: EMITTER
6: COLLECTOR
7: BASE
8: NO CONNECTION
MOC215, MOC216, MOC217
continued (TA ~ 25°C unless otherwise noted)
MAXIMUM RATINGS -
I
Rating
Symbol
Value
Unit
V, SO
2500
Vac(rms)
Po
150
2.94
mW
mW/oC
°C
TOTAL DEVICE
Input-Output Isolation Voltage (1)
(60 Hz, 1.0 sec. duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
TA
-55 to + 100
Tstg
-55 to + 150
°C
-
260
°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
(1/16" from case, 10 sec. duration)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
I
Characteristic
Typ
Min
Symbol
Max
Unit
INPUT LED
VF
-
1.05
1.3
V
'R
-
0.1
100
/LA
C
-
18
-
pF
(VCE = 5.0 V, TA ~ 25°C)
ICE01
-
1.0
50
nA
(VCE ~ 5.0 V, TA ~ 100°C)
ICE02
-
1.0
/LA
Forward Voltage (IF = 1.0 mAl
~
Reverse Leakage Current (VR
6.0 V)
Capacitance
OUTPUT TRANSISTOR
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage (lc
Emitter-Collector Breakdown Voltage (IE
Collector-Emitter Capacitance (f
=
=
=
100 /LA)
V(BR)CEO
30
90
-
100 !LA)
V(BR)ECO
7.0
7.8
--
V
CCE
-
7.0
-
pF
IC
200
500
1.0
500
800
1.3
-
/LA
/LA
mA
0.35
0.4
7.5
toff
-
-
tr
-
3.2
tf
-
4.7
1.0 MHz, VCE = 0)
V
COUPLED
Output Collector Current
(IF = 1.0 mA, VCE = 5.0 V)
MOC215
MOC216
MOC217
Collector-Emitter Saturation Voltage (IC
=
100 !LA, 'F = 1.0 mAl
VCE(sat)
Turn-On Time (lC = 2.0 mA, VCC = 10 V, RL = 100(1)
= 2.0
Turn-Off Time (lC
= 10 V, RL = 100(1)
= 10 V, RL = 100(1)
= 10 V, RL = 100(1)
mA, VCC
Rise Time (IC = 2.0 mA, VCC
Fall Time (lC = 2.0 mA. VCC
.Isolation Voltage (f
ton
= 60 Hz, t
= 1.0 sec.)
5.7
-
V
/LS
/LS
-
/LS
/L"
-
10 11
-
-
n
-
0.2
-
pF
V,SO
2500
Isolation Resistance (VI-O = 500 V)
R,SO
Isolation Capacitance (V,-O = 0, f = 1.0 MHz)
C,SO
Vac(rms)
(1) Input-Output Isolation Voltage, VISQ, IS an Internal deVice dlelectnc breakdown rating. For thiS test, pinS 1 and 2 are common, and pinS 5, 6 and 7
are common.
TYPICAL CHARACTERISTICS
,
- - - - - PULSE ONLY
- - - PULSE OR DC
I
in 1.8
'3
I
~
I
w
~ 1.6
6
~
10
~
r-r--
«
~
,
I'
0
I
§
~
NORMALIZED TO:
1 rnA
IF
L
1
~
'3
~
:::>
u
~ 1.4
~
i/
!2u:. 1.2 f - Ti=~
:>
1 f-
1
-r
~
100°C
'"
~
~ o. 1
/
0
u
>--
i/
.....-
,.
10
100
'F. LED FORWARD CURRENT (rnA)
:::>
1=
:::>
0
.Y
1000
0.001
Figure 1. LED Forward Voltage versus Forward Current
0.05
0.1
0.2
0.5
1
'F. LED INPUT CURRENT (mAl
Figure 2. Output Current versus Input Current
5-9
MOC215, MOC216, MOC217
10
«E.
t~
ll§
i3
1.8
IF = 1 rnA
1.6
1.2
/'
~
1
~ 0.8
/ ........
80.6
1/
!;
I!: 0.4
/
-
MOC216
MOJ215_
IL V
::>
00.2
9
NORMALIZED TO:TA = 25"<: -
Mod217_
1.4
0
r
o
4
6
7
8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
-40
10
Figure 3. Output Current versus Collector-Emitter Voltage
a
""
20
r - NORMALIZED TO:
VCE
10V
100 ~ TA 25°C
~
~
30V
~o
~~
'"
0.1
o
II
I"
10
c..i
~
120
14
~ 12
~ ~10
100
f = 1 MHz
t"
16
~
fEe
80
C~E~
18
f=
~
~
20
40
60
TA, AMBIENT TEMPERATURE 1°C)
Figure 4. Output Current versus Ambient Temperature
t-
~
-20
CCE
2
20
40
60
TA, AMBIENT TEMPERATURE 1°C)
80
100
0.Q1
Figure 5. Dark Current versus Ambient Temperature
0.1
1
V, VOLTAGE IVOLTS)
10
Figure 6_ Capacitance versus Voltage
5-10
100
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MOC221
ICTR
Small Outline Optoisolators
= 100% Min]
MOC222
ICTR
Darlington Output
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon photodarlington detector, in a surface mountable, small outline,
plastic package. They are ideally suited for high density applications, and eliminate the
need for through-the-board mounting.
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• High Current Transfer Ratio (CTR) at Low LED Input Current, for Easier Logic
Interfacing
• Standard SOIC-8 Footprint, with .050" Lead Spacing
• Shipped in Tape and Reel, which Conforms to EIA Standard RS481A
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 Vac (rms) Guaranteed
• UL Recognized
File #E54915
Ordering Information:
• To obtain MOC221, 222, 223 in Tape and Reel, add R1 or R2 suffix to device numbers
as follows:
R1-500 units on 7" reel
R2-2500 units on 13" reel
• To obtain MOC221, 222, 223 in quantities of 75 (shipped in sleeves) - No Suffix
= 200% Min]
MOC223
[CTR
= 500% Min]
Motorola Preferred Devices
STYLE 1 PLASTIC
SMALL OUTLINE
OPTOISOLATORS
DARLINGTON OUTPUT
%
Marking Information:
• MOC221 = 221
• MOC222 = 222
• MOC223 = 223
CASE 846-01
SCHEMATIC
Applications:
• Low power Logic Circuits
• Interfacing and coupling systems of different potentials and impedances
• Telecommunications equipment
• Portable electronics
'~
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I
I Symbol
Value
Unit
IF
60
mA
IF(pk)
1.0
A
VR
6.0
V
Po
90
0.8
mW
mwrc
Collector-Emitter Voltage
VCEO
30
V
Collector-Base Voltage
VCBO
70
V
Emitter-Collector Voltage
VECO
7.0
V
Collector Current - Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Po
150
1.76
mW
mwrc
Rating
INPUT LED
Forward Current - Continuous
Forward Current - Peak (PW
= lOOl'-s. 120 pps)
Reverse Voltage
LED Power Dissipation @ TA
Derate above 25°C
= 25°C
OUTPUT DARLINGTON
(continued)
5-11
-DB
2o-J:~7
3D-
6
4D-
5
I: LED ANODE
2: LED CATHODE
3: NO CONNECTION
4: NO CONNECTION
5: EMITTER
6: COLLECTOR
7: BASE
8: NO CONNECTION
MOC221, MOC222, MOC223
MAXIMUM RATINGS -
I
continued (TA
= 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VISO
2500
Vac(rms)
Po
150
2.94
mW
mWrC
°c
TOTAL DEVICE
Input-Output Isolation Voltage (1)
(60 Hz, 1.0 sec. duration)
Total Device Power Dissipation @ TA
Derate above 25°C
=
25°C
Ambient Operating Temperature Range
Storage Temperature Range
TA
-55 to +100
Tstg
-55 to +150
"C
-
260
°c
lead Soldering Temperature
(1/16" from case, 10 sec. duration)
ELECTRICAL CHARACTERISTICS (TA
I
= 25°C unless otherwise noted)
I
Symbol
Min
Typ
Forward Voltage (IF = 1.0 mAl
VF
1.3
V
IR
0.1
100
p.A
Capacitance
C
-
1.05
Reverse leakage Current (VR = 6.0 V)
18
-
pF
-
1.0
50
nA
1.0
p.A
mA
Characteristic
Max
Unit
INPUT LED
OUTPUT DARLINGTON
Collector-Emitter Dark Current
(VCE = 5.0 V, TA = 25°C)
ICEOI
(VCE = 5.0 V, TA = 100°C)
ICE02
Collector-Emitter Breakdown Voltage (lc = 100,.A)
V(BR)CEO
30
90
Emitter-Collector Breakdown Voltage (IE = 100 p.A)
V(BR)ECO
7.0
7.8
CCE
-
5.5
-
1.0
2.0
5.0
2.0
4.0
10
-
-
1.0
V
3.5
-
p.s
Collector-Emitter Capacitance (f = 1.0 MHz, VCE = 0)
V
V
pF
COUPLED
Output Collector Current
(IF = 1.0 mA, VCE = 5.0 V)
MOC221
MOC222
MOC223
IC
toff
-
Rise Time (IF = 5.0 mA, VCC = 10 V, Rl = 100 Il)
tr
-
1.0
Fall Time (IF = 5.0 mA, VCC = 10 V. RL = 100 Il)
tf
-
2.0
Collector-Emitter Saturation Voltage (lC = 500,.A, IF = 1.0 mAl
VCE(sat)
Turn-On Time (IF = 5.0 mA, VCC = 10 V, Rl = 100!l)
ton
Turn-Off Time (IF = 5.0 mA, VCC = 10 V, RL = 100!l)
Isolation Voltage (f = 60 Hz, t = 1.0 sec.)
VISO
2500
Isolation Resistance (VI-O = 500 V)
RISO
1011
Isolation Capacitance (VI-O = 0, f = 1.0 MHz)
CISO
-
(1) Input-Output Isolation Voltage,
are common.
Visa.
-
-
0.2
-
95
p.s
p.s
p.s
Vac(rms)
Il
pF
18 an mternal deVice dielectric breakdown ratmg. For thiS test. pms 1 and 2 are common, and pms 5, 6 and 7
.
TYPICAL CHARACTERISTICS
Cl00
2
i1!
/1
I.B
~
w
~
~
~
I
- - - - - PULSE ONLY
- - - PULSE OR DC
I
I
1.6
~
!Z
~
I
~
-
~1.2
1
10
~
NORMALIZED TO:
IF = 1 rnA
a
g
li! 1.4
!r
r-
a:
o
/1
-
1
~
TA = -55OC
1~
IT
..H1"
l000C
~
I
8
~
I
[...oooi--'
I--"
10
100
IF, LED FORWARD CURRENT (rnA)
1000
Figure 1. LED Forward Voltage versus Forward Current
5-12
90.1
0.1
10
IF, LED INPUT CURRENT (rnA)
100
Figure 2. Output Current versus Input Current
MOC221, MOC222, MOC223
14
«
12 t - - IF
15
a:
10
.s....
I
= lmA
-
-
a:
::>
u
a:
Ei
~
-
J--
j..---
8....
M
::>
:=::>
0
~
-
o
o
,
I
NORMALIZED TO:
25°C
I-TA
MOC223
cm
MC221
2345678
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI
-40
10
Figure 3. Output Current versus Collector-Emitter Voltage
-20
20
40
60
TA. AMBIENT TEMPERATURE (OCI
20
VCE
30V
V
V
1/
~
16
V
~
14
01"- 10V
8
u
U
1/
V
CEB
40
60
TA. AMBIENT TEMPERATURE (OCI
80
100
0.Q1
Figure 5. Dark Current versus Ambient Temperature
5-13
C~E
I
o
20
1 MHz
CCB
«
t::: 10
~
«
=
-...u
z
1/
f
II
Ij 12
./
120
II III
.\1
18
5V
25°C
100
Figure 4. Output Current versus Ambient Temperature
~F NORMALIZED TO:
VCE
TA
80
0.1
1
V. VOLTAGE (VOLTSI
10
Figure 6. Capacitance versus Voltage
100
5-14
Section Six
POWER OPTOTM Isolators
General Information ........................ 6-2
MOC2A40-10fF ............................. 6-3
MOC2A40-SfF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 6-3
MOC2A60-10fF ............................. 6-8
MOC2A60-SfF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 6-8
Applications Information ................... 6-13
AN1S11 ..................................... 6-13
6-1
.....lIrlt.~
rl"~.I.r;U
ISOLATORS
General Information
Equivalent Discrete SemIconductors
The MOC2A40 and MOC2A60 Series are the first members of the POWER OPTOTM Isolator family from Motorola. The
MOC2A40/MOC2A60 are 2 Amp @ 40°C/400 Vac [pk]lZero-Crossing/Optically Coupled Triacs. These isolated AC output devices
are ruggedized to survive the harsh operating environments inherent in Industrial Controller applications. Additionally, their
thermally optimized SIP package profile allows for high density stacking on .200" centers, and can handle 2 Amps @ 40°C (Free-Air
Rating) without the need for heatsinks, thermal grease, etc.
General Characteristics
•
•
•
•
•
•
•
•
•
•
Customer Benefits
2 Amp @ 40°C, Zero-Cross, Optically Coupled Triac.
3,750 Vac (rms) Isolation Voltage.
Zero-Voltage Turn-on. Zero-current Turn-off.
60 Amp Single Cycle Surge Withstand Capability.
Meets NEMA 2-230 & IEEE 472 Noise Immunity
Standards.
Guaranteed 400 V llSec dv/dt (Static).
Low 0.96 V (Typical) On-State Voltage.
Thermally Efficient Package yields 8.0°CIW ReJc.
Single In-Line Package Mounts on .200" Centers for High
Density Applications.
U.L. Recognized. C.S.A. approved, V.D.E. (in process).
•
•
•
•
•
•
•
•
•
A World Class POWER OPTOTht Isolator
Meets Isolation Requirements for V.D.E.
Protects Loads from High In-rush Currents
Robust Surge Withstand Performance
Stability against Noise-Induced False Turn-on
Good Inductive Load Switching Capability
Generates 30-50% Less Heat than Competitive Devices
No Heatsink, Grease or Hardware Required
Allows for Optimal Channel Density in Programmable
Controller Applications
• Global Regulatory Approvals
Literature
Types of
Applications and Loads
•
•
•
•
•
•
•
•
•
•
•
•
• Data Sheets
MOC2A40·101D & MOC2A6G-101D
• Sample Pack
KITMOC2A4G-101D KITMOC2A6o-51D
• Evaluation Board DEVB109
Programmable Logic Controllers
Distributive Process Controls
Industrial Controls & Automation Systems
Temperature Controllers
HVAC & Energy Management Systems
Gaming Machines
Vending Machines
Gas Pumps
Photocopiers
AC Motor Starters
EM Contactors
AC Solenoids/Valves
6-2
MOTOROLA
SEMICONDUCTOR.------~~~~~~
TECHNICAL DATA
MOC2A40·10
MOC2A40·S
~OWER OPTOTM Isolator
2 Amp Zero-Cross Triac Output
Motorola Preferred Davtc..
This device consists of a gallium arsenide infrared emitting diode optically coupled to
a zero-cross triac driver circuit and a power triac. It is capable of driving a load of up to 2
amp (rms) directly, on line voltages from 20 to 140 volts ac (rms).
•
•
•
•
•
•
Provides Normally Open Solid State A.C. Output With 2 Amp Rating
60 Amp Single Cycle Surge Capability
Zero-Voltage Turn-on and Zero-Current Turn-off
High Input-Output Isolation of 3750 vac (rms)
Static dv/dt Rating of 400 Volts/I1S Guaranteed
2 Amp Pilot Duty Rating Per UL508 '11117 (Overload Test)
and '11118 (Endurance Test)" [File No. 129224]
• CSA Approved [File No. CA77170-1]. VDE Approval in Process
• Exceeds NEMA 2-230 and IEEE472 Noise Immunity Test Requirements (See Fig.15)
OPTOISOLATOR
2 AMP ZERO CROSS
TRIAC OUTPUT
400 VOLTS
DEVICE RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Forward Current -
Maximum Continuous
Forward Current - Maximum Peak
(PW = 1001'S, 120 pps)
Reverse Voltage -
Maximum
IF
50
mA
IF(pk)
1.0
A
VR
6.0
V
OUTPUT TRIAC
Off-State Output Terminal Voltage -
Maximum [1]
VDRM
400
Vac(pk)
VT
20 to 140
Vac(rms)
On-State Current Range (Free Air, Power Factor;, 0.3)
IT(rms)
0.01 to 2.0
A
Non-Repetitive Peak Overcurrent (I = 60 Hz, t = 1.0 sec)
ITSMI
24
A
ITSM2
60
A
A2sec
Recommended Operating Voltage Range
(I = 47 - 63 Hz)
Max
Non-Repetitive Single Cycle Surge CurrentMaximum Peak (t = 16.7 ms)
CASE 417-02
PLASTIC PACKAGE
STYLE 2
DEVICE SCHEMATIC
Main Terminal Fusing Current (t = 8.3 ms)
12T
15
Load Power Factor Range
PF
0.3 to 1.0
Junction Temperature Range
TJ
-40 to 125
°C
VISO
3750
Vac(rms)
ROJC
8.0
°e/W
Toper
-40to+l00
°C
Tstg
-40to+150
°C
-
260
°C
-
TOTAL DEVICE
Input-Output Isolation Voltage 47 - 63 Hz, 1 sec Duration
Thermal Resistance (See Fig. 16)
Maximum [2]
Power Triac Junction to Case
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature - Maximum
(1/16" From Case, 10 sec Duration)
* Zero Voltage Activate Circu~
Notes:
{1] Test voltages must be applied within ctv/dt rating.
[2] Input-OUtput isolatlon voltage, Visa. is an Intemal device dielectric breakdown rating. For this test, pins 2, 3 and the heat tab
are common, and pins 7 and 9 are common.
Preferred devices are Motorola recommended choices for future use and best overall value.
6-3
1,4,5.6,8. No Pin
2. LED Ca1hode
3. LED Anode
7. Main Terminal
9. Main Terminal
MOC2A40-10. MOC2A40-S
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
I Symbol
Characteristic
Min
Typ
Max
Unit
INPUT LED
Forward VoHage (IF = 10 rnA)
VF
1.00
1.17
1.50
V
Reverse Leakage Current (VR = 6.0 V)
IR
-
1.0
100
IlA
Capacitance
C
-
18
-
pF
-
-
10
1.0
rnA
400
-
-
VljJS
300
-
IlA
-
7.0
3.5
10
5.0
rnA
rnA
OUTPUT TRIAC
Off·State Leakage, Either Direction (IF = 0, VDRM = 400 V) TA = 25°C
TA=100°C
IDRMl
IDRM2
Critical Rate of Rise 01 Off·State Voltage (Static)
Vin = 200 vac(pk» [1] [2]
dv/dt(s)
Holding Current, Either Direction (IF = 0, VD = 12 V, IT = 200 rnA)
-
IH
IlA
COUPLED
LED Trigger Current Required to Latch Output
Either Direction (Main Terminal VoHage = 2.0 V) [3] [4]
MOC2A40·10
MOC2A40·S
-
IFT(on)
IFT(on)
On·State Voltage, Either Direction (IF = Rated IFT(on), ITM = 2.0 A)
VTM
-
0.96
1.3
V
Inhibit VoHage, Either Direction (IF = Rated IFT(on» [SJ
(Main Terminal Voltage above which device will not Trigger)
VINH
-
8.0
10
V
Commutating dv/dt (Rated VDRM, IT = 30 rnA - 2.0 A(rms),
TA = - 40 ± 100°C, 1 = 60 Hz) [2]
dv/dt (c)
5.0
-
-
VII'S
Common·mode Input·Output dv/dt [2]
dv/dt(cm)
-
40,000
-
V/!1S
CISO
-
1.3
RISO
10·
1014
Input·Output Capacitance (V = 0, 1 = 1.0 MHz)
Isolation Resistance (VI.O = 500 V)
-
pF
a
N....:
[1] Per EIAINARM standard RS443, with Vp = 200 V, which is the instantaneous peak of the maximum operating voltage.
[2] Additional ctv/dt information, including test methods, can be found in Motorola applications note AN10481D, Figure 43.
[3] All devices are guaranteed to trigger at an 'F value less than or equal to the max
Therefore, the recommended operating 'F
Ues between the device's maximum 'FT
W
~
~
c
c
a::
i12
r--... .......
40
c 1.40
a::
i
. . . r--.
0
Il.
20
> 1.00
11.
-40
-20
o
20
40
60
80
TA, AMBIENT TEMPERATURE (0C)
0.80
100
-~
-
I--
TA= 40°C
1.20
LL
.........
o
1.60
!j
60
(,)
~
- - - PULSE ONLY
PULSE OR DC
120
:::::::
1
Figure 1. Maximum Allowable Forward LED
Current versus Ambient Temperature
I-"
V
I--""~
" ,
" ,
", ,,
" ,
, , ,
,,,
,
-~
V~
'1or.c
10
100
If', FORWARD CURRENT (rnA)
Figure 2. LED Forward Voltage
versus LED Forward Current
6-4
1000
MOC2A40-10. MOC2A40-5
1.60
!z
I!!
1.50
~ 1.40
(.)
ffi
8
2.4
\.
\.
\.
1.30
"' "'
~ 1.20
!i!
~ 1.10
f2
WORST CASE UNIT
NORMALIZED TO
TA = 25°C
"' ........
---
1.00
~0.90
0.80
-40
o
-20
i
-
-
5
~
:2' 50
oS
5.
!z
w
0:
0:
=>
(.)
....
~
:!
0:
w
....
~
,
,
,
-
~
100
30
-""---
0.0
-40
2.20
w
~ 1.80
~ 1.60
z
1.5
Q
~
ffi
-- - -
:;; 1.20
<
i:!
0.1
1
PW, PULSE DURATION (SECONDS)
0.60
10
0.Q1
..
120
'
C
~
0.1
~
;::::~
60
0
40
!3z
=>
~
....-.
II
1
:!
w
....
z
MEAN
II
0.5
10
.
TA~2~OCI
/
~
W
MAXIMUMV/
W
0.1
1
ITM, INSTANTANEOUS ON·STATE CURRENT (A)
0100
e...
w
0:
=> 80
g
1.0
0.0
0.01
Iff
. ...
.
V
Figure 6. On-5tate Voltage Drop versus
Output Terminal Current
0..
0..
TJ = 25:f,...
> 0.80
0:
~
0..
PULSE OR DC
:il 1.40
-H-
!f
120
~
TJ = 25°C
2.5
2.0
100
- _I ~ULSE O~LY I -
/
~
Figure 5. Maximum Allowable Surge Current
versus Pulse Duration
en
1"-
20
40
60
80
TA, AMBIENT TEMPERATURE (OC)
2: 2.00
10
0.01
Ii~
o
-20
=t 1.00
o
1"-
Figure 4. Maximum Allowable On-State RMS Output
Current (Free Air) versus Ambient Temperature
I 11111
TJ = 125°C
20
"-
0.4
120
NOTE: DATA ASSUMES A NON-REPETITIVE,
UNIFORM AMPLITUDE, CURRENT PULSE AT
lliE INDICATED TEMPERATURE PRIOR TO
SURGE. CONTROL OF CONDUCTION MAY BE
LOST DURING SURGE.
40
I"
1.2
:il
0: 0.8
t!:!
20
40
60
80
TAo AMBIENT TEMPERATURE (OC)
,
"-
1.6
Figure 3. Forward LED Trigger Current
versus Ambient Temperature
60
:,
2.0
5:
10
V
I--- I--"
20
o
0.01
0.1
1
IT, MAIN TERMINAL CURRENT (A)
IT, MAIN TERMINAL CURRENT (A)
Figure 7. Power Dissipation
versus Main Terminal Current
Figure 8. Junction Temperature versus Main
Terminal RMS Current (Free Air)
6-5
10
MOC2A40-10. MOC2A40-5
;
100
600
is
10
0
~
I- NORMAUZED TO
~
L
TA = 25°C
-
-... r-
Ia
r-.
UJ
~j
-... r-.
-... l"-
V
0.1
I'-
100
V
0.01
-40
o
-20
20
40
60
80
TA, AMBIENT TEMPERATURE (OC)
100
o
-40
120
Figure 9. Leakage With LED Off versus
Ambient Temperature
roo-
20
40
60
80
TA, AMBIENT TEMPERATURE (OC)
100
Figure 10. Holding Current versus
Ambient Temperature
__U
1000
STATIC
o
-20
f= =
LED INPUT
100
VOLTAGE
PIN7T09
COMMUTATING
IT = 30 rnA - 2A(RMS)
o
-40
F=60Hz
o
-20
20
40
60
80
TA, AMBIENT TEMPERATURE (OC)
100
120
Figure 11. dv/dt versus Ambient Temperature
Vee
r ... - - ..... - - .. _- ... .,
.MOC2A40r-~~r-~~.-------~
:
b.r
.
• R2
MOV
Cl
ZVA
'- __ ... _ _ _ _ _ _ _ _ .J
*ZERO VOLTAGE ACTIVATE CIRCUIT
Figure 13. Typical Application Circuit
Figure 12. Operating Waveforms
Select the value of Rl according to the following formulas:
[1]
R1 (VCC - VF) / Max. 1FT (on) per spec.
[2]
Rl = (Vce - VF) / 0.050
=
Typical values for Cl and R2 are 0.01 I1F and 39 n,
respectively. You may adjust these values for specific
applications. The maximum recommended value of Cl is
0.02211F. See application note ANI 048 for additional
information on component values.
The MOV mayor may not be needed depending upon the
characteristics of the applied ac line voltage. For
applications where line spikes may exceed the 400 V rating
of the MOC2A40, an MOV is required.
6-6
120
MOC2A40-10. MOC2A40-5
Use care to maintain the minimum spacings as
shown. Safety and regulatory requirements dictate
a minimum of 8.0 mm between the closest points
between input and output conducting paths,
Pins 3 and 7. Also, 0.070 inches distance is
required between the two output Pins, 7 and 9.
(0
II
Keep pad sizes on Pins 7 and 9 as large as possible for
optimal performance.
•
O.3tS' MIN
(BMM MIN]
Figure 14. PC Board Layout Recommendations
OEVICE UNDER TEST
Each device, when installed in the circuit
shown in Figure 15, shall be capable of
passing the following conducted noise tests:
•
•
•
•
2
3
7
9
NOISE
SOURCE
IEEE 472 (2.5 KV)
Lamp Dimmer (NEMA Part DC33, § 3.4.2.1)
NEMA ICS 2-230.45 Showering Arc
MIL-STD-461A CS01, CS02 and CS06
Figure 15. Test Circuit for Conducted Noise Tests
NO ADDITIONAL HEATSINK
JUNCTION
{
TEMPERATURE OF
MOC2A40 . . .
OUTPUT CHIP
~
Rruc
RecA
HEAT FLOW
_
WITH ADDITIONAL HEATSINK
}
AMBIENT AIR
TEMPERATURE
~
Rruc
Racs
ReSA
Terms in the model signify:
TA =Ambient temperature
ReSA = Thermal resistance, heat sink to ambient
TS = Optional additional
ReCA =Thermal resistance, case to ambient
heat sink temperature Recs = Thermal reSistance, heat sink to case
TC = Case temperature
ReJC = Thermal resistance, junction to case
TJ = Junction temperature
Po = Power dissipation
Values for thermal resistance components are: RecA = 36°ClWlin maximum
ReJC =B.O°CIW maximum
The design of any additional heatsink will determine the values of ReSA and RecS.
TC - TA = Po (ReCA)
= Po (RruC) + ReSA), where Po = Power Oissipation in Watts.
Figure 16. Approximate Thermal Circuit Model
6-7
Thermal measurements
of ReJC are referenced to
the point on the heat tab
indicated with an 'X'.
Measurements should be
taken with device orientated
along its vertical axis.
MOTOROLA
SEMICONDUCTOR._ _ _ _ _ _~~~~~~
TECHNICAL DATA
MOC2A60·10
MOC2A60·S
Advance Information
POWER OPTOTM Isolator
Motorola Pralerred _ _
2 Amp Zero-Cross Triac Output
This device consists of a gallium arsenide infrared emitting diode optically coupled to
a zero-cross triac driver circuit and a power triac. It is capable of driving a load of up to 2
amp (rms) directly, on line voltages from 20 to 280 volts ac (rms).
•
•
•
•
•
•
Provides Normally Open Solid State A.C. Output With 2 Amp Rating
60 Amp Single Cycle Surge Capability
Zero-Voltage Turn-on and Zero-Current Turn-off
High Input-Output Isolation of 3750 vac (rms)
Static dv/dt Rating of 400 VoltsllJS Guaranteed
2 Amp Pilot Duty Rating Per UL508 ~117 (Overload Test)
and ~118 (Endurance Test) ' " [File No. 129224)
• CSA Approved [File No. CA77170-1). VDE Approval in Process
• Exceeds NEMA 2-230 and IEEE472 Noise Immunity Test Requirements (See Fig.15)
OPTOISOLATOR
2 AMP ZERO CROSS
TRIAC OUTPUT
600 VOLTS
DEVICE RATINGS (TA = 25°C unless otherwise noted)
Symbol
Rating
Value
Unit
INPUT LED
Forward Current -
Maximum Continuous
Forward Current - Maximum Peak
(PW = 100J!S, 120 pps)
Reverse Voltage -
Maximum
IF
50
rnA
IF(pk)
1.0
A
VR
6.0
V
OUTPUT TRIAC
VDRM
600
Vac(pk)
VT
20 to 280
Vac(rms)
On-State Current Range (Free Air, Power Factor" 0.3)
IT(rms)
0.Q1 to 2.0
A
Non-Repetitive Peak Overcurrent (f = 60 Hz, t = 1.0 sec)
ITSMl
24
A
ITSM2
60
A
A2 sec
Off-State Output Terminal Voltage -
Maximum [1]
Recommended Operating Voltage Range
(f = 47 -63 Hz)
Max
Non-Repetitive Single Cycle Surge CurrentMaximum Peak (t = 16.7 ms)
CASE 417-02
PLASTIC PACKAGE
STYLE 2
DEVICE SCHEMATIC
Main Terminal FUSing Current (t = 8.3 ms)
12T
15
Load Power Factor Range
PF
0.3 to 1.0
Junction Temperature Range
TJ
-40 to 125
°C
VISO
3750
Vac(rms)
R9JC
8.0
°CIW
Toper
-4Oto +100
°C
Tstg
-40to+150
°C
-
260
°C
-
TOTAL DEVICE
Input-Output Isolation Voltage 47 - 63 Hz, 1 sec Duration
Maximum [2]
• Zero Voltage Activate Circuft
Thermal Resistance (See Fig. 16)
Power Triac Junction to Case
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature - Maximum
(1/1S" From Case, 10 sec Duration)
1,4,5,6,8. No Pin
2. LED cathode
3. LED Anode
7. Main Terminal
9. Main Terminal
Notes:
[1] Test voltages must be applied within dv/dt rating.
[2] Input-outpullsolation voltage, VISQ. Is an internal device dielectric breakdown rating. For this test, pins 2. 3 and the heat tab are common, and pins 7 and 9 are common.
This document contains infonnation on a new product. Specifications and information herein are subject to change without notice.
POWER OPTO is a trademark of Motorola Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
6-8
MOC2ASO-10 • MOC2ASO-5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
I Symbol
Characteristic
Min
Max
Unit
INPUT LED
1.17
1.50
V
1.0
100
I'A
C
-
lB
-
pF
Off-State Leakage, Either Direction (IF = 0, VORM = 600 V) TA=25°C
TA = 100°C
IORMI
IORM2
-
-
-
-
10
1.0
rnA
Critical Rate of Rise of Off-State Voltage (Static)
Yin = 200 vac(pk)) [1] [2]
dv/dt(s)
400
-
-
VII's
Forward Voltage (IF = to rnA)
1.00
VF
Reverse Leakage Current (VR = 6.0 V)
IR
Capacitance
OUTPUT TRIAC
J.LA
IH
-
300
-
J.LA
IFT(on)
IFT(on)
-
7.0
3.5
10
5.0
rnA
rnA
On-State Voltage, Either Direction (IF = Rated IFT(on), ITM = 2.0 A)
VTM
1.3
V
VINH
-
0.96
Inhibit Voltage, Either Direction (IF = Rated IFT(on)) [5]
(Main Terminal Voltage above which device will not Trigger)
B.O
10
V
-
-
ViI'S
-
VII'S
1.3
10"
-
Q
Holding Current, Either Direction (IF = 0, Vo = 12 V, IT = 200 rnA)
COUPLED
LED Trigger Current Required to Latch Output
Either Direction (Main Terminal Voltage = 2.0 V) [3] [4]
MOC2A60-10
MOC2A60-5
Commutating dv/dl (Rated VORM, IT = 30 rnA - 2.0 A(rms),
TA = - 40 ± 100°C, f = 60 Hz) [2]
dv/dt (c)
5.0
Input-Output Capacitance (V = 0, f = 1.0 MHz)
CISO
-
Isolation Resistance (VI-O = 500 V)
RISO
109
Common-mode Input-Output dv/dt [2]
dv/dt(cm)
40,000
pF
Note,,,
[1] Per EIAINARM standard RS-443. with Vp = 200 V, which is the instantaneous peak of the maximum operating voltage.
[2] Additional dv/dt information, including test methods, can be found In Motorola applications note AN104B1D, Figure 43.
[3] All devices are guaranteed to trigger at an IF value less than or equal to the max IFf Therefore, the recommended operating IF
lies between the device's maximum iFT(on) limit and the Maximum Rating of 50 mAo
[4] Current-limiting resistor required in series with LED.
[5] Also known as "Zero Voltage Turn-On-,
TYPICAL CHARACTERISTICS
100
<"
.§.
2.00
1.80
80
~
!z
w
a:
a:
w
~ 1.80
:::>
80
c
~
c
40
'-'
a:
~
~
" ,
" ,
- - - PULSE ONLY
PULSEOR DC
r--- ......
ti
~
c 1.40
a:
........
r--...
~
r--.
20
u.
u.
> t.OO
11.
o
-40
-20
o
0.80
20
40
60
80
100
-::::::~
TA= 40°C
01.20
-
1
120
TA, AMBIENT TEMPERATURE (OC)
~C
VI--'
~ -I--'
V
10
" ,
, , ,,
, , ,
,,,
,
....... 1--'
100
I;; FORWARD CURRENT (rnA)
Figure 1, Maximum Allowable Forward LED
Current versus Ambient Temperature
Figure 2. LED Forward Voltage
versus LED Forward Current
6-9
1000
MOC2A60-10. MOC2A60-5
1.60
!iii
~
2.4
1.50
§ 1.40
2.0
"\
WORST CASE UNIT
NORMAUZED TO
TA=25'C
u
ffi
~
f!:
~
1.30
1.20
i
1.10
f2
1.00
"'"'
"'"'
t--t---
100
20
40
60
80
TAo AMBIENT TEMPERATURE ('C)
~~
1.2
~
0.8
~
So 50
~
IZ
w
a:
a:
40
~
u
....
~
:E
a:
I:!!
.£-
30
..
..
r-..
0.0
-40
120
,
""-
o
-20
20
40
60
80
TA. AMBIENT TEMPERATURE ('C)
100
120
2.20 ,----.--....-r..,..,.-rrr-----,r-r-r_--rn_"~U.,-.LS-E-O~r-LY-r.I--r-TTTTT1
:E 2.00 I-~'tt+t-Htlt-++f-ff" PULSE OR DC
~
/
!:§ 1.80 1--1/+-IH-H+Hftt--+H-H+Hftt--H-H-Ht-H+l
~ 1.60~/~A~H-+++H~--~~+++H~--~~+++H~
II ill
TJ=25'C
V
;2
:i! 1.40 1--+-J-+1I-+-I+tt+I---t-tI-+-I+tt+I---t-t-+-I+l-I-H
.:8-
.. .
TJ = 125'C
20
"-
Figure 4. Maximum Allowable On-State RMS Output
Current (Free Air) versus Ambient Temperature
NOTE: DATA ASSUMES A NON-REPETmVE •
UNIFORM AMPUTUDE. CURRENT PULSE AT
THE INDICATED TEMPERATURE PRIOR TO
SURGE. CONTROL OF CONDUCTION MAY BE
LOST DURING SURGE.
, .........
I"
0.4
Figure 3. Forward LED Trigger Current
versus Ambient Temperature
60
" ""- "-
1.6
.£-
o
-20
I--
-
i;0.90
0.80
-40
g
~
a:
w
.
~ 1.20 1--+-J-+1I-+-I+tt+I---t-tI-+-I+tt+I---t-t-+-I+Hl.I
~- 1.00 1-t-1+1H--+++++t---t--tH--+++++t--::::;I...-'"j;-'-.j-'-"'-t-Hfj
i!
10
TJ = 25'C _
r-::::. -
> 0.80 HH-4-I-++-H+I-7.-;';;;'::t-=bil,l.-l-H:ji"'"'"""~++1-++++H
10ft
o
0.01
L.!±H::I±±I±t:::::J..--.LWlll1_U.JJillU
0.1
1
~
1.5
11.
120
I,,
g
:;;
I:!!
~
~
0.5
0.0
0.01
0.1
1
40
20
1-"">
I
tr. MAIN TERMINAL CURRENT (A)
/
10
Figure 7. Power DiSSipation
versus Main Terminal Current
V
60
z
§z
MEAN
......., ~~
Ii
~
W
11.
1.0
C
TA ~ 2~,d
~ 100
w
a:
~
80
MAXIMUMV
11.
10
Figure 6. On-State Voltage Drop versus
Output Terminal Current
~
ifc;;
'"Qa:
~
1
Figure 5. Maximum Allowable Surge Current
versus Pulse Duration
,
g
0.1
trM. INSTANTANEOUS ON·STATE CURRENT (A)
2.5
2.0
0.60
0.01
10
pw. PULSE DURATION (SECONDS)
o
0.01
--
f---:"
0.1
1
IT. MAIN TERMINAL CURRENT (A)
Figure 8. Junction Temperature versus Main
Terminal RMS Current (Free Air)
6-10
10
MOC2A60-10. MOC2A60-S
100
600
6
~
-
:::l
a:
a:
=>
'-'
w
.......
~300
z
!:.
9
a:
.......
~ 200
'"
0.1
- -- - -
100
r-.
_0
0.01
-40
o
-20
20
40
60
80
TA. AMBIENT TEMPERATURE (OC)
100
o
120
-40
Figure 9. Leakage With LED Off versus
Ambient Temperature
__U
f= =
-
100
LED INPUT
VOLTAGE
PIN7T09
'6
:g
100
20
40
60
80
TA. AMBIENT TEMPERATURE (OC)
Figure 10. Holding Current versus
Ambient Temperature
1000
STATIC
o
-20
COMMUTATING
10
o
IT =30 rnA - 2A(RMS)
F=60Hz
-40
o
-20
20
40
60
80
TA. AMBIENT TEMPERATURE (0C)
100
120
Figure 11. dv/dt versus Ambient Temperature
r-----------.,
VCC
b
.MOC2A60.-~-+--.-~------~
:
• R2
MOV
r
• Cl
ZVA
.
..... _______ ..... _J
"ZERO VOLTAGE ACTIVATE CIRCUIT
Figure 13. "TYpical Application Circuit
Figure 12. Operating Waveforms
Select the value of R1 according to the following formulas:
[1]
R1 = (VCC - VF) I Max. 1FT (on) per spec.
[2]
R1 (VCC - VF) I 0.050
=
Typical values for C1 and R2 are 0.01 ILF and 39 0.
respectively. You may adjust these values for specific
applications. The maximum recommended value of C1 is
0.022ILF. See application note AN1048 for additional
information on component values .
The MOV mayor may not be needed depending upon the
characteristics of the applied ac line voltage. For
applications where line spikes may exceed the 600 V rating
of the MOC2A60. an MOV is required.
6-11
120
MOC2ASO-10 • MOC2ASO-5
Use care to maintain the minimum spacings as
shown. Safety and regulatory requirements dictate
a minimum of 8.0 mm between the closest points
between input and output conducting paths,
Pins 3 and 7. Also, 0.070 inches distance is
required between the two output Pins, 7 and 9.
Keep pad sizes on Pins 7 and 9 as large as possible for
optimal performance.
Figure 14. PC Board Layout Recommendations
DEVICE UNDER TEST
Each device, when installed in the circuit
shown in Figure 15, shall be capable of
passing the following conducted noise tests:
•
•
•
•
2
3
7
9
NOISE
SOURCE
IEEE 472 (2.5 KV)
Lamp Dimmer (NEMA Part DC33, § 3.4.2.1)
NEMA ICS 2-230.45 Showering Arc
MIL-STD-461A CS01, CS02 and CS06
Figure 15. Test Circuit for Conducted Noise Tests
NO ADDITIONAL HEATSINK
JUNCTION
{
TEMPERATURE OF
MOC2A60. . .
OUTPUT CHIP
~
Rruc
ReGA
HEAT FLOW
_
WITH ADDITIONAL HEATSINK
}
AMBIENT AIR
TEMPERATURE
~
RruC
Racs
RaSA
Terms in the model signify:
TA = Ambient temperature
ReSA = Thermal reSistance, heat sink to ambient
TS = Optional additional
ROCA = Thermal resistance, case to ambient
heat sink temperature
Recs Thermal reSistance, heat sink to case
TC Case temperature
ReJC = Thermal reSistance, junction to case
TJ = Junction temperature
Po = Power dissipation
Values for thermal resistance components are: ReCA = 36·CIWlin maximum
RruC B.O·CIW maximum
The design of any additional heaisink will determine the values of ReSA and Recs.
=
=
=
TC - TA = Po (RecAl
Po (RruC) + ReSA), where Po Power Oissipation in Watts.
Figure 16. Approximate Thermal Circuit Model
=
=
6-12
Thermal measurements
of RSJC are referenced to
the point on the heat tab
indicated with an 'X'.
Measurements should be
taken with device orientated
along its vertical axis.
MOTOROLA
SEMICONDUCTOR
APPLICATION NOTE
AN1511
Applications of the MOC2A40 and MOC2A60
Series POWER OPTOTM ISOLATORS
Prepared by: Horst Gempe
Discrete Applications Engineering
INTRODUCTION
Electronic controls of AC power loads based on microprocessor controllers, digital or linear sensor circuits are
increasing in popularity. Consequently, there is an increasing
need for a simple and robust interface between the low voltage
control circuitry and the AC line and loads. This interface must
galvanically isolate the AC power line and its superimposed
transients from the noise sensitive, low-voltage dc control
circuits. It also must be simple to use, regulatory approved,
consume little PC board space and be able to switch the most
common loads such as small motors, power relays, incandescent lights and resistive loads without generating excessive
heat.
The MOC2A40 and MOC2A60 POWER OPTO Isolator
families meet all the above requirements and offer an ideal
system solution.
Nominal dimensions
1.0"
MOC Series ZeroCross
Triac Driver Chip
III x 0.7" IH) x 0.18" (W)
Patented Thermal
Min. Creepage
Figure 1. Internal Construction of the POWER OPTO Isolator
POWER OPTO is a trademark of Motorola, Inc.
6-13
AN1511
PRODUCT DESCRIPTION
The MotorolaAC POWER OPTO Isolator is a hybrid device
containing three individual active semiconductor chips.
Figure 1 shows the internal structure of this device. An
infrared light emitting diode on the input side converts the input
current signal of several milliamps into an infrared radiation of
940 nm. This is transferred through a transparent isolation
barrier onto the photo sensitive area of an AC compatible
detector which controls the gate of a power triac. This creates
galvanic isolation between the dc input control circuit and the
output AC line voltage potential. The light sensitive detector
contains aAC zero voltage detector which allows tum on olthe
detector chip by the LED only when the AC line voltage is
below the specified inhibit voltage of ±1 0 V. This feature guarantees turn on of the load close to the AC line zero cross point
and prevents excessive inrush surge currents for most loads.
High inrush currents are still experienced for loads such as
motor startup and inductors which saturate at turn-on. Forthis
reason, a guaranteed inrush surge current capability of 60 A is
provided. This extremely high surge capability can be attributed to the rugged 120 x 120 mil power triac chip which is
mounted on a large internal copper heat spreader. A patented
interdigitated interface between the internal heat spreader
and the devices integral heat tab provides optimized heat
transfer and meets the regulatory requirements for safe (reinforced) isolation. This regulatory requirement mandates an
external 8.0 mm creepage and clearance between the input
and output leads and the isolated heat tab of the device. A 0.4
mm thick isolation barrier which must be able to withstand a
surge voltage of 3750 Vrms is also mandated. The isolation
barrier between dc input and the AC output leads is formed by
the silicone optical dome. The isolation barrier for the integral
heat sink is formed by the package epoxy which isolates the
interlaced internal heat spreader from the external heat tab. A
heavy duty 15 mil aluminum wire bond on the output side olthe
power triac ensures high surge capability.
Equivalent Electrical Circuit Diagram
Figure 2 shows in detail the internal circuitry of the
MOC2A40 and MOC2A60 POWER OPTO Isolator families.
Details of the of the triac driver ICs internal circuitry is shown
and discussed to explain the theory of operation for these
devices.
LED D1 emits light which is received by the detector light
sensitive integrated circuit which is commonly named triac
driver. PNP transistor, 01, and light sensitive NPN transistor,
02, form a light sensitive SCR with a gate resistor R1. Diode,
D2, and FET, 03, form the inhibiting network. The leakage
current of D2 transfers the main terminal voltage to the FET
gate and Zener diode, D3, clamps this voltage to about 15 V to
prevent gate oxide breakdown when the main terminal voltage
rises with the line voltage. A voltage on the main terminals
above the gate threshold voltage of 03 switches FET 03 on,
which shorts the photo sensitive gate and inhibits it to latch on.
01',02', 03', R1', D2', D3' form the same circuit as described
above.
The two circuits are connected inverse parallel and may be
described as two inverse parallel light sensitive photo SCRs
with zero cross voltage detectors. This circuit can be further
simplified and described as an optically controlled small signal
triac with an AC zero cross detection circuit. The triac driver
controls the gate of the main triac. Resistor R2 limits the
current through the triac driver.
r----------------
I
I
~
00
I
I
I
I
I
IL _______________ _
LED
TRIAC DRIVER
Figure 2. 2 Amp Optocoupler Circuit
6-14
8 AMP TRIAC
AN1511
h
OptoTriac
Opto Inverse Parallel SCR
Figure 3. Triac Driver Simplified Circuits
OPERATION
An LED current of several mA will generate a photo current
of several tens of micro amps in the collector base junctions of
the NPN transistors ofthe triac driver chip. The SCR formed by
the NPN-PNP transistor combination latches on when the
photo generated current is present and the line voltage is
below the inhibit voltage window, or in other words, within the
zero cross window. Once the triac driver is latched on it allows
sufficient current flow to the gate of the main triac which in turn
latches on and carries the load current.
If the LED is turned on at a time when the line voltage
exceeds the inhibit voltage, the driver is effectively disabled
and will wait to latch on until the line voltage falls below the
inhibit voltage. The driver and triac, however, are not able to
switch on at absolute zero line voltage because they need a
minimum voltage and current to be able to latch on. For
example, if the LED is switched on when the line voltage is
zero, the LED flux generates a photo current in the detector of
several tens of micro amps, but the triac driver is not able to
latch on until the line voltage rises tothe driver's minimum main
terminal voltage of about 1.0 V and a latching current of
6-15
several 100 )JA is present. A further increase in line voltage is
necessary to trigger the main triac because its minimum gate
voltage requirement in respect to MT1 voltage is also about
1.0 V and has to be added to the voltage drop across the triac
driver. The main triac is able to turn on when at least 2.0 V are
across its main terminals and enough gate current is generated to meet the triacs gate trigger current requirement. This is
the earliest possible turn-on point within the zero-cross
window. Conversely, the maximum inhibit voltage represents
the last possible opportunity to turn on within the zero-cross
window.
When the main triac is triggered, the voltage across its main
terminals collapses to about 1.0 V. Figure 4 shows the zero
VOltage turn-on characteristic of a POWER OPTO Isolator as
observed with an oscilloscope by monitoring the voltage
across the main terminals of the device. Figure 5 shows a
curve tracer plot which gives information aboutthe voltage and
current characteristic.
AN1511
.-/ /
MAX INHIBIT
VOLTAGE
/
/
UNE
/!
EARUEST
POSSIBLE
TURN-ON
/~
~
~
/
--------
I
I
----~.~
I
\
-\
I
\
MAX ON-STATE
VOLTAGE OROP
I
I
---
I
CONTROL
SIGNAL APPUED
\
\
VOLTAGE
(1/2 CYClE)
f.I:.
~ f'~~~
/
'\
/
"'" , -
PERMISSIBLE
TURN-ON WINDOW
--- " "
(Vpkl
-----1-------I
I
II
III
I
/11
/
- f -••+I.I-----ONSTATE----.III--ONSTATEI
II \
/1 I
~
!~
INITIAL
TURN-ON
SUBSEQUENT
TURN-ON
Figure 4. Zero-Voltage Turn-On Voltage Characteristics
6-16
AN1511
1+
01
--
i
Triac Igt 01 l-
TriacVTM
~VTM+
VTM-
I
~
/
--
03
DnverVTM
Triac Igt03
1-
1V/div
Figure 5. Curve Tracer Voltage versus Current Plot
After the power triac is turned on, the triac driver conducts
only several hundred micro amps when the LED is still on but
switches off and stays off when the LED current is removed.
The main triac remains latched on until the load current falls
below the triacs holding current. After this transition point, the
driver will exclusively conduct the load current until the current
falls below several 100 micro amps. At this point only the photo
generated current of several tens of micro amps remains.
Triac driver and main triac are switched off and are retriggered
every half cycle until the LED is turned off. As the LED is
switched off the triac driver is switched off, and the main triac
falls out of conduction when the load current falls below the
main triac's holding current ( typically 20 mAl.
The fact that the triac driver has an extremely low holding
current allows the minimum load currents to be below the main
triac trigger and holding current. In this triac driver only mode,
the main triac never conducts and the load is only carried by
the triac driver. In this low current triac driver only mode,
com mutating dv/dt is no longer a function of the main triac
commutating capability, but is dependent on the triac drivers
com mutating dv/dt capability. This is only about 0.5 V/j!.S and
should be considered marginal. Therefore, the use of a
snubber is absolutely mandatory when switching loads in triac
driver only mode is antiCipated.
APPLICATIONS
Snubber Requirements
The application of the 2 amp POWER OPTO Isolators is
very simple. Most loads ranging from 30 mA up to 2 Arms,
including complex loads as discussed below, may be
controlled without the use of a snubber network. Snubbers are
required when the static and commutating dv/dt either generated by the load switched by the POWER OPTO Isolators or
generated elsewhere on the AC line exceed the device's dv/dt
ratings. In industrial environments where large inductive loads
are switched on and off by contactors, transients may be
generated which surpass the devices static dv/dt rating or the
maximum VDRM rating. For these cases a snubber consisting
of a resistor and a capacitor will attenuate the rate of rise of the
transient. A voltage clipping device (Metal Oxide Varistor
MOV) which limits the amplitude of the transients should be
used when the amplitude of the transients exceed the devices '
VDRM ratings. Snubber and transient suppressors are
connected across the main terminals of the POWER OPTO
Isolator as shown in Figure 6.
load
AClIne
Figure 6. Application with Snubber and MOV
6-17
AN1511
Typical values for the snubber capacitor C's and snubber
resistor R's are 0.01 ~F and 39 Q respectively. These values
may be adjusted for specific applications. See Application
Note AN1048 for detailed information about snubber design
considerations.
The placement of the load has no influence on the optocoupler's performance. It may be switched from the line
neutral to the phase (hot) side or from the phase to neutral.
IFT(on)=specifiedLEDtriggercurrent*factorforlowtemperature operation
IF(max) maximum continues LED forward current (50mA)
=
Complex Loads
Surge Currents in Inductive Loads
Inductive loads may cause very high inrush surge currents
because their magnetic core is forced into saturation as
observed with transformers or the inductance is low at the
initial startup which is typical for relays, solenoids and motors.
Amp
40
Example 1: Size No.4 Contactor Control
30
The MOC2A40 has demonstrated its ability to handle large
inrush currents by driving a size No.4 contactor out to 2 million
cycles without failure. The device is cycled one second on and
one second off. The 115 Vrms input coil generates a 50 A peak
in the first half cycle, and 20 A peak in the second half cycle as
shown in Figure 7. The RMS steady state current is below 1 A.
A MOC2A40 in free air Is able to control this load without additional heat sinking and without the use of a snubber.
Two million device cycles without failure represent a
reliability of M.T.B.F of >19.8 million device cycles.
20
10
Example 2: Transformer Inrush Current
Figure 7. Size No.4 Contactor Inrush
Current
Input Current Requirement
It is very important to supply the data sheet specified input
current to the device. Less input current may prevent tum-on of
either both light sensitive SCRs or worse, be able to tum on
only one SCR due to slight differences in 1FT for the positive
and negative AC half wave. This situation causes half-waving
ofthe load. Most inductive loads draw excessive current under
this condition which may destroy either the load or the optocoupler. Low temperature operation requires increased input
LED current as shown on the data sheet's IFTvs. Temperature
graph.
For example:
The IFTfora MOC2A40-1 Oat25°C is 10mA, but is at-40°C
15,5 mA (1FT @ 25°C*factor 1.55 as shown on the graph).
This minimum control current requirement dictates the
value of the input current limiting resistor Rin for a given input
voltage.
It is mandatory in this application to make certain that the
inrush current does not exceed the maximum 60 A specified
surge current of the device. Residual core magnetization
combined with zero cross turn-on may force the transformer
into saturation with only the winding resistance left as effective
load current limitation. Forexample, a 150 VA transformer with
a 1.5 Q winding resistance may draw in the first half-cycle up to
80 A of surge current. This excessive surge current can be
avoided by using a NTC thermistor in series with the load as
shown in Figure 8. A negative temperature coefficient thermistor has a relative high initial resistance when cold, which fast
becomes lower due to self-heating in the steady-state operation.
Rin(max) = Vin - VF(LED)
IFT(on)
R" ( . ) _ Vin - VFL(LED)
In min IFmax
=
Vin Input Voltage
VF(LED) voltage drop across LED
=
NTC
'I.MJ.MF
Figure 8. Thermistor Limits Excessive
Inrush Current
Example 3: Surge Currents in Capacitive Loads
A rectifier bridge or a single diode in combination with a
large capaCitor in the micro Farad range represent a very low
impedance at startup when the capacitor is being charged.
When this type of load is switched on at the peak of the line
=1.3 V
6-18
AN1511
voltage, the inrush peak current is only limited by the wiring
resistance and the ESR of the capacitor. However, the
maximum inrush current Ip at zero voltage turn-on is limited by
the AC line frequency and the peak line voltage and can be
calculated as Ip= C 21t f Vp, where C is the capacitance in
Farad, f the line frequency in Herz and Vp the peak line
voltage. For an AC line voltage of 120 V rms 60 Hz and a capacitor of 100 j.lF, the surge current Ip is 6.4 A.
The above calculation for Ip applies to absolute zero
voltage tum-on. Turn-on within the zero cross window voltage
range of the POWER OPTO Isolators generates considerable
higher inrush currents. A 100 j.lF capacitor switched on at 5.0 V
already produced an inrush current of 25 A. Accidental turn-on
of the device at the peak of the line voltage charging a 100 j.lF
capacitor without current limitation leads to certain destruction
of the power triac. Turn on outside the zero-cross window may
be caused by line transients exceeding the devices VTM or
dv/dt ratings. A inrush current limiting resistor or NTC Thermistor connected in series to the AC side of the rectifier and the
POWER OPTO Isolators output can prevent this potential
problem.
External
100kQ
II
Bleeder
Resistor
Figure 9. AC-DC Solenoid with Integral
Diode
Example 4: AC-DC Solenoid with
Internal Rectifier Diode
Some AC-DC relays and solenoids are made ac-dc
compatible by using an internal rectifier diode in series with the
coil. This poses a problem to a zero-crossing switch because
the rectifier diode allows a dc build up across the input terminals. This DC forces the zero-cross switch into the inhibit mode
which prevents the load from being switched on. A 100 K
bleeder resistor across the input terminals of this type of load
prevents dc build up thus allowing proper control. The wattage
rating of this resistor is
P _ Vrms2
R
where P = 1/2 W for 220 V rms and
1/4 Wfor 115Vrms
current to be switched off rapidly as the line voltage changes
polarity. The resulting high commutating di/dt may prevent the
triac from turning off. The effect of this commutating dv/dt can
be minimized by using a snubber across the device in
combination with a com mutating softening inductor Ls as
shown in Figure 10. Ls is a small high permeability "square
loop" inductor which can be constructed by using a ferrite
torroid of 3/4" outside diameter with 33 turns of a number 18
gauge wire. Its core saturates when the load current is high but
adds a high inductance when the load current falls below the
holding current of the triac. This arrangement slows the rapid
di/dt and delays the reapplication of the line voltage which
improves the dv/dt capability of the triac.
Thermal Management
To insure proper and reliable operation of the isolated 2 A
power switch, it is mandatory to operate the junction of the
power triac within or below the maximum specified junction
temperature. Temperatures above 125°C may lead to a
possible loss of control (permanent latch on) and shortened
life of the semiconductors. Junction over temperature problems can be avoided in the application when the devices
thermal ratings are properly observed.
Free Standing Power Rating
The 2 Amp POWER OPTO Isolator device families are
designed to be able to switch 2 A of AC rms and dissipate 2 W
at an ambient free air temperature of up to 40°C without any
additional heat sink. The single device rating only applies
when free air circulation around the device - i.e. - natural air
convection is allowed. There are major differences in effective
air convection and the resulting temperature drop between the
junction-to-air, depending on the amount and position of the
devices on the PC board, and the PC board itself in respect to
the natural air flow. Other power dissipating devices in close
viCinity of the power switch will raise the ambient temperature
which means less power can be dissipated by the switch. This
also holds true for enclosures which inhibit or restrict the free
air flow around the power switch and result in an increased
ambient temperature. The maximum allowed power dissipation versus the increase of ambient temperature is shown in
Figure 11. A horizontally positioned PC board with the device
in its center will restrict natural air convection, while a vertical
positioned PC board with the device positioned along the
vertical axis will result in an optimized air convection. Free air
flow around the epoxy body of the device and its heat sink
creates a thermal air convection that cools the powersemiconductor junction. Pin 7 conducts some of the generated heat to
the PC board because it is part of the internal power semiconductor heat spreader. This heat transfer can be enhanced
when one allows a large metalized area on the PC board althe
viCinity of this pin for increased heat spreading.
Thermal Resistances of the Device
Example 5: Controlling an Inductive Load in a
Rectifier Bridge
This configuration may cause triac switch off difficulties
when the UR time constant of the inductor to be switched is
longer than 1/2 cycle of the line AC. In this case, the load
current is not sinusoidal but constant, which causes the
6-19
The heat of the power semiconductor junction is conducted
to the internal heat spreader where it is then distributed to the
epoxy body and the integral and electrically isolated heat tab
of the device. Some of the heat in the heat spreader is transferred to the printed circuit board through main terminal pin 7.
AN1511
Inductive Load with Bridge Rectifier and UR >1/1
DC Motorwhh AC Bridge Rectifier and UR >1/1
l.s
Rs
Cs
ACin
o n
au
D n
uu
I VOLTAGE
I CURRENT
Figure 10. Inductive Loads with Bridge Rectifier
The epoxy body, integral heat sink and the PC board transfer
this heat to the ambient air. Each heat path has its own thermal
resistance. All these thermal resistances are in parallel and
groupedtogetherinthedevice'sthermal rating of RaJA which is
40°CIW for a free-standing, single device mounted on a PC
board.
Thermal resistances are as follows:
RaJA
Thermal resistance from junction to ambient
air= 40°CIW
RaJC Thermal resistance junction to case
(epoxy body back side and heat tab) = SOCIW
RaJT
Thermal resistance junction to heat tab only
-14°CIW. (This is not specified in the data sheet)
RaJ p7 Junction to pin 7 (thermocouple on pin 7)
-10°CIW (This is not specified in the data Sheet).
RaSA
Thermal resistance of additional
heat sink to ambient.
The junction temperature for a free standing single device
is calculated as follows:
Power dissipation equals P = VTM*lrms which is approximately 1 W per Ampere RMS flowing through the main terminals of the device. For exact calculation use the data sheet
VTM value for a given current.
The maximum power dissipation for a free standing
device is
6-20
P
TJ(maxl - TA
(max) =
RaJA
For example, the maximum power dissipation for a free
standing MOC2A40 at an ambient temperature of
70°C is
p(max) =
125°C-70°C
400 C/W
1.375 wor I(max) is 1.37 A.
AN1511
Devices with Additional Heat Sink
10°C/W 8°C/W
i' "'"'- ......
6°C/W 40C/W
.....
"
........
-
l- t-
_
.... r--.
......
.......
"-
1'\ " IRWCI =I8°C/WI
i'
" """ i'. "
""'- "~ "
"- """ "'-
....
NO HEAT SINK
RWA =40°C/W
IIIII
o
o
.......
.......
1'\
.......
i'o..
--
t-
All AC POWER OPTO Isolators contain an 8 A triac chip,
but the maximum allowable switching current is limited by the
heat dissipation of the package. Significant increase in
switching current and the consequent power dissipation is
possible by the use of an additional heat sink.
Since the integral sink and the epoxy body of these devices
transfer heat, the best results are seen when the devices'
entire back side is held in contact with the external heat sink,
and thermal grease is used. This mounting method results in
optimized heat conduction with the lowest practical possible
thermal resistance of 8°CIW which is specified as ReJC. This
includes the thermal resistance of the interface between the
device and the heat sink.
Connecting the heat tab only to the external heat sink
results in an thermal resistance ReJT of 14°CIW which
includes the thermal interface resistance between the integral
heat sink to the external heat sink.
The external heat sink can be of an extruded type which is
commercially available, a flat aluminum plate or simply a part
of a sheet metal frame or housing to which the device is held by
a steel spring clip. External heat sinks are characterized by
RaSA which is the thermal resistance from the heat sink to the
ambient air. The lower the rating of the heat sink in terms of
°CIW the better its thermal efficiency is. Figure 12 shows the
thermal resistance of common heat sink materials. This
thermal resistance must be added to the optocouplers thermal
resistance ReJC or ReJT where applicable.
There are no electrical safety considerations because the
device's heat sink is electrically isolated and regulatory
approved.
It is possible to calculate the devices junction temperature
TJ as follows, TJ = «VTM*lrms*(ReJC + ReCA» + TAWe are also able to calculate the maximum current and
power dissipation allowed as follows,
EXTERNAL HEAT
SINK RATING
.......
~
t- .... r-.
5 10 15 20 2530 35 40 45 50 55 60
AMBIENT TEMPERATURE (OC)
65 70 75 80
Figure 11. Power Derating versus Ambient
Temperature
Material
Conductivity
Watts In °C
Resistivity
°C InJWatt
Air (100°C)
0.001
1,000
Aluminum
5.63
0.178
Alumina (AI Oxide)
0.55
1.82
Brass
2.97
0.337
Copper
9.93
0.101
Epoxy (Conductive)
0.02
Iron (Pure)
1.90
0.526
Nickel
1.52
0.658
Nickel Silver
0.84
1.19
P
For example, a MOC2A40 device is mounted with its entire
back side to a flat aluminum heat sink with a thermal rating
RaSA of 5°CIW. Thermal grease is used on the interface and
the ambient temperature is maximum 70°C.
50.0
Phosphor Bronze
1.80
0.555
Steel (1045)
1.27
0.787
Steel, Stainless (347)
0.41
2.44
Tin
1.60
0.625
Zinc
2.87
0.348
_ TJ(max) - TA
(max) - ReJC + RaCA
125°C -70°C
p(max)
=80CIW + 50CIW
4.23W
The same external heat sink is used but only the device's
heat tab is connected to aluminum heat sink which increases
the thermal resistance from the semiconductor junction to the
external heat sink. Note the considerable loss of power
handling capability.
p(max)
125°C -70°C
140CIW + 50CIW = 2.89 W
Figure 11 shows the maximum allowed power dissipation
for a single free standing device without heat sink and for
devices with various external heat sinks versus the ambient
temperature.
Figure 12. Thermal Resistance of Common Materials
Used for Heat Sinking
6-21
AN1511
III
Optimized PJr Row
1:1==
I:F=
III
III
III
III
III
III
1:1==
1:=
I
#1
#2
#3
Cluster with PC Board in Vertical Position
Restricted Air Flow
~
I
\
\
\
\
Cluster with PC Board in Horizorrtai Position
Figure 13. Clusters of Devices on a PC Board
6-22
\
\
,"-
.......
-
AN1511
Devices Stacked in Clusters with
Minimal Spacing of 200 Mils
One ofthe great advantages olthe 2 A optocouplerfamily is
its small footprint on a PC board. This enables the user to
cluster many devices in one row with only 200 mil spacing from
lead to lead as shown in Figure 13. Devices in this close
approximation influence each other thermally by heat transfer
through the epoxy bodies, the integral heat sinks and by heat
conduction through pin 7 to the PC board. Prudence would
suggests that clustered devices are running much hotter than
a single free standing device and the maximum power
handling must be derated when all devices within this cluster
are switched on. It can be also predicted that devices in the
center of the cluster run much hotter than the devices at each
end. This also means the individual devices within the cluster
are not able to dissipate the full rated power but must be thermally derated. The following study with clusters show the
impact ofthis derating. Of course, the position ofthis cluster in
respect to the natural air convection is also very important.
Clusters on a horizontal positioned circuit board run much
hotter than devices on a vertical oriented circuit board. Vertical
orientation of the devices and the circuit board allow optimized
heat flow due to the "chimney' effect. Figure 14 shows the heat
distribution for each individual device in a cluster of 10 devices
for vertical and horizontal circuit board positions. All devices
are conducting 1 A of current which is about 1 W of power
145
125
_
V I--/
Horizontal
r-- f" ~
"
./
/"
~
2.5
I
I
TJmax
Xceed~""
V
dissipation. As predicted, the devices in the center of the
cluster show the highest temperature, while the devices at the
end run cooler but are still much hotter than the stand alone
rating would predict. The graph also demonstrates the importance of free air flow versus restricted air flow caused by a horizontal positioned PC board. It is important to note that the
junction temperature ofthe center devices on the vertical positioned board exceeds the maximum rating of 125°C with a
input power of only 1 watt! The dissipated power for these
devices has to be lowered in order to stay within their
maximum junction temperature rating.
It is now of interest to know the maximum power dissipation
allowed for devices in various sized clusters or the maximum
power allowed for devices within a large cluster versus the
amount of devices switched on at the same time. The graph in
Figure 15 is taken from a cluster of 25 devices where the X
axis shows the number of units which are turned on with the
same power dissipation and the Y axis shows the resulting
maximum allowed power dissipation for each unit. The power
is first applied to device#l then to device#l and device #2 then
to device#l and 2 and 3, and so on. The junction temperature
of the hottest unit in the cluster (which is always in the center of
the units turned on within the cluster) is the limiting factor. It is
also interesting to note that the power derating is not a linear
function of the cluster size but asymptotically levels out to a
steady value for cluster sizes exceeding 20 devices.
2.0
'"
Board Vertical
5
-
0
o.5
45
0
25
2
7
4
8
10
11
16
21
Unit
Figure 14. Cluster T J Junction Temperature
Distribu1ion in a Cluster of 10 TA 25°C, All
Devices on with I 1 Arms
=
Figure 15. Maximum Allowed Power Dissipation
per Device Versus Cluster Size
=
6-23
26
6-24
Section Seven
Discrete
Emitters/Detectors
MLED81 .................................... 7-2
MLED91 .................................... 7-4
MLED96 .................................... 7-7
MLED97 .................................... 7-9
MLED930 ................................... 7-11
MOC9000 ................................... 7-13
MRD300 .................................... 7-16
MRD360 .................................... 7-19
MRD500 .................................... 7-22
MRD821 .................................... 7-25
MRD901 .................................... 7-28
MRD911 .................................... 7-30
MRD921 .................................... 7-32
MRD950 .................................... 7-35
MRD5009 ................................... 7-39
7-1
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
Infrared LED
MLED81
Features:
Motorola Preferred Device
•
•
•
•
•
Low Cost
Popular T-1'l1. Package
Ideal Beam Angle for Most Remote Control Applications in Conjunction with MRD821
Uses Stable Long-Life LED Technology
Clear Epoxy Package
INFRARED
LED
940nm
Applications:
Remote Controls and Long Distance Interruptive Sensing
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
Unit
VR
5
Volts
mA
Forward Current -
Continuous
IF
100
Forward Current -
Peak Pulse
IF
1
A
Total Power Dissipation @! TA = 25'C
Derate above 25'C
Po
100
2.2
mW
mWI'C
Ambient Operating Temperature Range
TA
-30to +70
'C
Tstg
-30 to +80
'C
-
260
'C
Storage Temperature
Lead Soldering Temperature,
5 seconds max, 1/16 inch from case
CASE 2798-01
STYLE 1
0----1.~I------o
2
1
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Characteristic
Reverse Leakage Current (VR
Reverse Leakage Current (VR
Forward Voltage (IF
=
= 3 V)
= 5 V)
100 mAl
=
Min
Typ
Max
IR
-
10
-
nA
IR
-
1
10
pA
-
1.35
1.7
-1.6
-
VF
Temperature Coefficient of Forward Voltage
Capacitance (f
Symbol
/),.VF
1 MHz)
C
25
Unit
V
mV/K
pF
OPTICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Characteristic
Peak Wavelength (IF
=
Symbol
100 mAl
Spectral Half-Power Bandwidth
Total Power Output (IF
=
100 mAl
Temperature Coefficient of Total Power Output
Axial Radiant Intensity (IF
=
100 mAl
Temperature Coefficient of Axial Radiant Intensity
Max
Unit
-
/),.A
50
-
nm
0e
-
16
mW
/),.0e
-
-0.25
-
Ie
10
15
-
mWlsr
-0.25
-
'I'
7-2
Typ
940
/),.Ie
Power Half-Angle
Min
-
Ap
-
±30
nm
%!K
%!K
,
MLED81
TYPICAL CHARACTERISTICS
II IIII
II IIII
8
-
2
--DC
- - - - PULSE ONLY
1
~.
6
,
I
I
2
--10
100
IF. LEO FORWARD CURRENT ImAl
I
4
~
1 ~-
\
6
4
2
/
8
I
\
L
0
1000
\
\
\
700
Figure 1. lED Forward Voltage versus Forward Current
800
....
900
1000
A. WAVELENGTH (nml
1100
Figure 2. Relative Spectral Emission
f--
f=
----
PULSE ONLY
DC
1
10
100
IF. FORWARD CURRENT (mAl
Figure 3. Spatial Radiation Pattern
Figure 4. Intensity versus Forward Current
7-3
1000
MOTOROLA
SEMICONDUCTOR-----------TECHNICAL DATA
MLED91
Series
Advance Information
Infrared 940 nm LED
The MLED91 series 940 nm LEDs are mUlti-purpose devices capable for use
in numerous applications. These Gallium Arsenide devices are manufactured to
tight tolerances for maximum performance and long lifetime. The devices can be
purchased in tape and reel format (in compliance with the EIA 468-A specification) to meet auto-insertion needs.
Motorola Preferred Devices
940nm LED
Features:
• LowCost
• Well Suited for Use with Any MRD900 Series Optical Detector
• Low Degradation
• New Mold Technology Improves Performance Under Variable
Environmental Conditions
• New Lens Design Offers Improved Optical Performance
• EIA 468-A Compliant Tape and Reel Option Available
(MLED91 RLRE and MLED91 ARLRE)
Applications:
• Low Bit Rate Communication Systems
• Keyboards
• Coin Handlers
• Paper Handlers
• Touch Screens
• Shaft Encoders
• General Purpose Interruptive and Reflective Event Sensors
CASE 422A-01
Style 1
O--I~*I--- 500
\
I~
II
.'
/1
,/ "',! /T~.JJd
,"'",'" ~"
=>
is
a:
w
LIJ II
/1 ~~o~
/
l-
(f)
T ~ _140~CI
A
~I'
.'"
......
,~
TA, AMBIENT TEMPERATURE (0C)
100
If; FORWARD CURRENT (rnA)
Figure 1. Power Dissipation
Figure 2_ Power Output versus Forward Current
50
100
See Note 3 for CondHions.
7-5
1000
MLED91 Series
1.0
S"
~
rr
0
0.8
1/
0.7
~
0.6
:::>
0.5
...
!50
-/ r\
\
/
0.9
I
7
0.4
0.2
0 0.1
0.
o
~
If; FORWARD CURRENT (mA)
30"
II
-
60"
....s.
...z
"'"
~
0.5
r-...
~
~
~
~
....... 1-0...
~
~
~
A, WAVELENGTIi (om)
10
!i:
1.0
""
IF = 100 mA
.......
-,..
IF=SOmA",
.:.,
1.0
,
/
\.'\.."'-
rr
rr
:::>
<>
::J
~t;:t:~E::::E~
\
N:"
- ---
TA = 25°C
VCE=5V ~ IF
w
90"
\
\
100
45°
60°
I
Figure 4. Relative Spectral Power Output
Figure 3. Forward Voltage versus Forward Current
20°
IF=SOmA
)
rr
w 0.3
~
TA=~oC ~
,
,..
,..
IL
...............
IF=2 rnA
0.5
1.0
90°
Figure 5. Spatial Radiation Pattern
10
20
30
LENS TO LENS DISTANCE (rnrn)
40
Figure 6. Coupled Characteristics of
MLED91 and MRD901
7-6
50
MOTOROLA
SEMICONDUCTOR-_ _ _ _ _ _ _ _ _ _ __
TECHNICAL DATA
Advance Information
660 nm (RED) Light Emitting Diodes
MLED96
Features:
•
•
•
•
Motorola Preferred Device
AIGaAs Technology Utilizing Low Degradation Processing
Great for Use as an Indicator
Well Suited for Use in Plastic Optical Fiber (POF) Applications
EIA-468-A Compliant Tape and Reel Available (MLED96RLRE)
Applications:
• Plastic Optical Fiber (POF) Transmitters
• Visible Red LED Indicators
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
Unit
VR
5.0
vons
60
mA
Forward Current -
Continuous
IF
Forward Current -
Peak Pulse
IF
1.0
A
PD
100
2.0
mW
mWFC
Total Power Dissipation @ TA = 25°C (1)
Derate above 35°C
Ambient Operating Temperature Range
Storage Temperature
Lead Soldering Temperature (2)
TA
-40to +100
°C
Tstg
-40to+100
°C
TL
260
°C
CASE 422A-01
STYLE 4
0>---1."'1---<0
1
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Reverse Leakage Current (VR = 3.0 V)
Characteristic
IR
100
Reverse Leakage Current (VR = 5.0 V)
IR
-2.2
Max
Forward Voltage (IF = 60 mAl
VF
Temperature Coefficient 01 Forward Voltage
tiVF
C
-
50
-
pF
Max
Unit
Capacitance (I = 1.0 MHz)
-
Unit
-
nA
~
10
100
1.8
2.2
Volis
-
mVIK
OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Peak Wavelength (IF = 60 mAl
AP
-
660
Spectral Half-Power Bandwidth
t:.A
-
20
Axial Power Output Intensity
(IF = 100 mAl (3)
Po
80
Instantaneous Axial Intensity (IF = 100 mAl (4)
10
0.8
Power Half-Angle
l}
Characteristic
Optical Turn-On lime
ton
Optical Turn-Off Time
!off
Half-Power Electrical Bandwidth (5)
BWe
(1)
(2)
(3)
(4)
-
Measured with device soldered into a typical printed circuit board.
5 seconds max; 1/16 inch from case. Heat sink should be applied during soldering, to prevent case temperature from exceeding 100°C.
Measured using a 11.28 mm diameter detector placed 21.0 mm away from the device under test.
On-axis, wittJ cone angle of ± 130 •
(5) IF "" 100mA pk-pk, 100% modulation.
This document contains infonnatlon on a new product. Specifications and infonnation herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
7-7
-
nm
220
-
J.lW/sqcm
1.3
-
mW/sr
±20
-
150
-
6.0
-
200
nm
°
ns
ns
MHz
MLED96
TYPICAL CHARACTERISTICS
--- --- - - - - --- r--- ---
150
---
i'
.s.
z 100
0
\
Ifen
en
K
2 mwrc
is
II:
W
~
\
D-
eS
D.
o
-40
50
TA, AMBIENTlEMPERATURE (OC)
--- - - --f--- --- ~-- ---
\
100
-75
20°
20"
-50
-25
0
25
50
30°
1.0
N
45°
45°
:::J
0.8
II:
0.7
~
0.6
:§
0
I-
:::>
60°
60°
TA=2~OC
DI-
:::>
0
~
D-
~
0.5
0.5
1.0
90°
I
0.5
0.4
0.3
/
0.2
0.1
....V
0
600
2.2
2.1
~
- - - PULSE ONLY
2.0
- - - PULSEORLl\;
~
!:l
g
1.8
~
1.7
~
1.6
II:
12
I
I
i===
\
I'...
....... ""'--
640
680
A WAVELENGTH (run)
720
,..,.
PULSE ONLY
PULSE OR DC
f:=
I--
III
I
I--
/
1.9
c
/
\
10
IITAI=
11111
en
w
I
L \
Figure 4. Relative Spectral Emission
Figure 5. Spatial Radiation Pattern
!:i
_
IF=50mA
II:
1.0
100
Figure 2. Instantaneous Power Output
versus Ambient Temperature
0.9
is'
w
90"
75
TA, AMBIENTlEMPERATURE (OC)
Figure 1. Power Dissipation
30°
r--
NORMAUZED 0:
TA=25°C
I'\.
50
~
i-'"
.TA -25°C
1
r-- ....
1.5
1.0
10
100
If, LED FORWARD CURRENT (mA)
1000
Figure 5. Forward Voltage
versus Forward Current
0.0 1
1.0
10
100
If, FORWARD CURRENT (rnA)
Figure 6. Instantaneous Power Output
versus Forward Current
7-8
1000
MOTOROLA
SEMICONDUCTOR-----------TECHNICAL DATA
Advance Information
850nm Light Emitting Diode
MLED97
Motorola Preferred Device
Features:
•
•
•
•
Low Degradation AIGaAs Processing
High Power
Well-Matched to Si Detectors
Plastic Optical Fiber (POF) Transmission Matched
Applications:
• Plastic Optical Fiber Transmitters
• Silicon Sensors Requiring Close Wavelength Matching
CASE 422A-Ol
STYLE 4
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
Unit
VR
6.0
Volts
mA
Forward Current - Continuous
IF
60
Forward Current -
IF
1.0
A
PD
120
2.0
mW
mWrC
Peak Pulse
Total Power Dissipation @ TA = 25°C (1)
Derate above 40°C
Ambient Operating Temperature Range
Storage Temperature
Lead Soldering Temperature (2)
TA
-40to +100
°c
Tstg
-40to+l00
°C
TL
260
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Reverse Leakage Current (VR = 6.0 V)
Characteristic
IR
-
0.05
100
).IA
Forward Voltage (IF = 50 mAl
VF
1.4
2.0
Volts
-
mV/K
Temperature Coefficient 01 Forward Voltage
CapaCitance (V = 0 V, 1= 1.0 MHz)
I!NF
-
-1.6
C
-
200
Unit
pF
OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Peak Wavelength (IF = 60 mAl
Characteristic
A.p
850
Spectral Half-Power Bandwidth
I!.')..
-
Axial Power Output Intensity
(If= 100mA)
Po
~
Power Half-Angle
Optical Rise and Fall Time (10% - 90%) (See Figure 7)
tr,tl
200
-
(1) Measured with device soldered into a typical printed circuit board.
(2) 5 seconds max; 1116 inch from case. Heat sink should be applied during soldering, to prevent case temperature from exceeding 100°C.
This document contains infonnation on a new product. Specifications and infonnation herein are subject to change without notice.
PrefelT8d devices are Motorola recommended chOices for future use and best overall value.
7-9
40
±30
25
Max
35
Unit
nm
nm
j.lW/sqcm
°
ns
MLED97
TYPICAL CHARACTERISTICS
150
Iz
Q
~
,
100
~
~
i
t:::3
3:!!i
file.:> 1.0
I\.
0..
o
50
TA. AMBIENT TEMPERATURE (OC)
.........
.""-.
~o
~ .... 0.9
z
[\
...........
0.8
100
-80
-~
-40
~
0
30°
1.0
45°
/ 11
I \
0.9
N
0.8
~
a:
0.7
~
0.6
....
0.5
0
0.4
~
0.3
:::J
0
~
0..
80° ::>
a:
0..
ri>
L
-
0.1
~
l'il
~
g
~
i12
i-
1.7
1.6 r--
1.4
- - - PULSE ONLY
- - - PULSE OR DC
i~:~
TA=25°C
~i
/- ....
1.4
1.1
100
--.
890
~
910
0.4
ri>
0.2
1000
TA = 25°C
- - - PULSE ONLY
I - - - PULSE OR DC
o
o
~~
~~
'"
lL'
0.8
~~
~
10
850
870
11., WAVELENGTH (nm)
83j)
1 1
1-1
1/.",'"
!:IS 0.6
1.2
1.0
1.0
\.
"'"
810
W
I-
1.3
/
1\
J.
Figure 4. Relative Spectral Output
1.6
1.5
\
V
790
II 1111
1.8 f-
TA=25°C _
IF=50mA
I
0.2
Figure 5. Spatial Radiation Pattern
!:i
100
1
I
90°
Ii)
80
60
Figure 2. Instantaneous Power Output
Ambient Temperature
W
1.9
40
....
TEMPERATURE (OC)
6"
2.0
r---..
..... i".
Figure 1. Power Dissipation
20°
r--....
!:Ire
1\
ci
-40
"'
~'" 1.1
50
o
.........
:J:W
i\2mwrc
a:
~
r-...
1.2
,,/
/
~
V
40
60
80
100
1~
140
If; FORWARD CURRENT (rnA)
If; FORWARD CURRENT (rnA)
Figure 5. Forward Voltage versus Forward Current
Figure 6. Instantaneous Power Output
versus Forward Current
7-10
160
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MLED930
Infrared LED (940 nm)
Motorola Preferred Device
The MLED930 is designed for applications requiring high power output, low drive power
and very fast response time. It is spectrally matched for use with silicon detectors.
Features:
• High-Power Output - 4 mW (Typical) @ IF = 100 mA, Pulsed
• Infrared-Emission - 940 nm (Typical)
• low Drive Current - 10 mA for 450 uW (Typical)
• Popular TO-IS Type Package for Easy Handling and Mounting
• Hermetic Metal Package for Stability and Reliability
INFRARED
LED
940 nm
Applications:
• Industrial Processing and Control
• Shaft or Position Readers
• Optical Switching
• Remote Control
• light Modulators
• Punched Card Readers
• logic Circuits
~~J
1
CASE 209-01
METAL
STYLE 1
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current - Continuous
Forward Current - Peak Pulse (PW
Total Device Dissipation @ TA
Derate above 25°C (Note 1)
=
100 ,",S, d.c.
= 2%)
= 25°C
Operating Temperature Range
Storage Temperature Range
Symbol
Value
Unit
VR
6
Volts
mA
IF
60
IF
1
A
Po
250
2.27
mW
mWrc
TA
-55 to +125
°C
Tstg
-65 to +150
OC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Fig. No.
Symbol
3 V)
-
IR
=
-
V(BR)R
Characteristic
Reverse leakage Current (VR
=
Reverse Breakdown Voltage (lR
Forward Voltage (IF
= 50 mAl
= 0 V, f =
Total Capacitance (VR
100,..A)
1 MHz)
Typ
Max
-
2
-
nA
6
20
-
Volts
Min
Unit
2
VF
1.5
Volts
CT
-
1.32
-
18
-
pF
Po
-
2.5
4
OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Total Power Output (Note 2) (IF = 60 mA, dc)
(IF = 100 mA. PW = 100 ,",S, duty cycle = 2%)
3,4
Radiant Intensity (Note 3)
(IF = 100 mA. PW = 100 ,",S, duty cycle
-
1
= 2%)
10
-
1.5
-
mW
mWI
steradian
Peak Emission Wavelength
1
AP
-
940
-
nm
Spectral line Half Width
1
4A
-
40
-
nm
Notes: 1. Printed Circuit Board Mounting
2. Power Output, Po. is the total power radiated by the device into a solid angle of 21T steradians. It is measured by directing all radiation leaving the
device. within this solid angle. onto a calibrated silicon solar cell.
3. !rradlance from a Light Emitting Diode (LED) can be calculated by:
Ie where H is irradiance in mW/em 2; Ie is radiant intensity in mW/steradian;
H=d 2 is distance from LED to the detector in em.
7-11
MLED930
TYPICAL CHARACTERISTICS
1
0.9
/
§ O.B
O
~
~
I
Q..
I
O. 5
O.4
I
0.3
0.2
O. 1
2.2
\
~ O.7
a::
~ O.6
~
/ .'\
\
I
\
II
-
- - PULSE ONLY
-PULSEORDC
1\
\
-,,'
\
"-........
/
./
880
900
920
94ll
960
A. WAVELENGTH (nml
980
'""'-
1
1000
1
Figure 1. Relative Spectral Output
I
a
r-.....
~
::E
a::
.....
:::>
I!:
:::>
a::
~
o?
r-.....
0.7
I
~
lk
...
20
10
~
TA
o
25"(;
a::
~
~
"-
./
0.5
53
.........
.........
0.5
0.3
-75
~
10
100
iF. INSTANTANEOUS FORWARD CURRENT (mAl
Figure 2. Forward Characteristics
NORMALIZED TO _
TA = 25°C
"""
0
~
0
........
I
.-
~
0.2
~
0.1
PULSE OR DC
PULSE ONLY
;;;
'" 0.05
o?
-50
-25
0
25
50
75
TJ. JUNCTION TEMPERATURE (OCI
100
0.02
10
20
50
100
200
500 1000
iF. INSTANTANEOUS FORWARD CURRENT (mAl
2
150
Figure 3. Power Output versus Junction Temperature
Figure 4. Instantaneous Power Output
versus Forward Current
40°
50"
60"
7rt
80°
90°
Figure 5. Spatial Radiation Pattern
7-12
2000
MOTOROLA
SEMICONDUCTOR-----------TECHNICAL DATA
Advance Information
OPTO Transceiver and
Reflective Sensor
MOC9000
Motorola preferred Device
Features:
• Low Degradation IR LED and NPN Phototransistor
• LowCost
• New Mold Technology Improves Performance Under Variable
Environmental Conditions
• New Lens Design Offers Improved Optical Performance
• EIA 468-A Compliant Tape and Reel Option Available (MOC9000RLRE)
OPTO TRANSCEIVER AND
REFLECTIVE SENSOR
Applications:
• Low Bit Rate, Short Distance Communication Systems
• Reflective Sensors
• Non-Contact Sensing and Communications
CASE 422-01
Style 4
m
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
6.0
Volts
mA
Reverse Breakdown Voltage (LED)
Continuous Forward Current (LED)
IF
50
Peak Pulse Forward Current (LED)
IF
1.0
A
VCEO
30
Volts
Po
100mW
2.0
mWrC
Collector-Emitter Voltage (Transistor)
Device Power Dissipation @ TA = 2SoC (1)
Derate above 55°C
mW
Ambient Operating Temperature
Top
-40to 100
°C
Storage Temperature
Tstg
-40to 100
°C
TL
260
°C
Lead Soldering Temperature (2)
LED ELECTRICAL CHARACTERISTICS (TA = 2SOC unless otherwise noted)
Characteristic
Reverse Leakage Current (VR
Forward Voltage (IF
Symbol
=6.0 V)
'R
=SO mAl
VF
Temperature Coefficient of Forward Voltage
Capacitance (V
I!..VF
=0 V, f =1.0 MHz)
C
Typ
Max
-
O.OS
100
~
1.3
1.S
Volts
-
-1.6
Min
24
(1) Measured with device soldered into a typical printed circuit board.
(2) Maximum exposure time: five seconds. Minimum of 1/16 inch from the case. A heat sink should be applied in order to prevent the case temperature
from exceeding 100°C.
This document contains infonnation on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
7-13
50
Unit
mVrC
pF
MOC9000
LED OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Peak Emission Wavelength (IF = 50 mAl
Spectral Hall Power Wavelength
Spectral Output Temperature Shift
Symbol
Min
Typ
Max
Unit
A
930
940
950
nm
-
-
48
-
nm
0.3
-
nmf'C
Axial Power Output Intensity
(IF = 20 mAl (3)
MLED91
Po
25
50
-
!!W/sqcm
Intensity Per Unn Solid Angle
(IF =20 mAl (3)
MLED91
Ee
0.2
0.65
-
mW/Sr
Q
-
±30
-
°
tr,tl
-
1.0
-
!!S
Power Half-Angle
Rise lime and Fall lime
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Collector Dark Current (VCE = 10 V, H = 0 (Dark»
ID
-
10
100
Collector Emitter Breakdown Voltage (lc = 100 !!A)
BVCEO
30
-
-
Symbol
Min
Typ
Max
IL
0.1
0.7
1.0
-
Characteristic
Unit
nA
Volts
OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Collector Light Current (VCE = 5.0 V,
H = 500 !!W/sq cm @ 940 nm)
MRD901
MRD901 A
Saturation Voltage (H = 3.0 mW/sq cm,
Wavelength = 940 nm, IC = 2.0 mA, VCE = 5.0 V)
-
-
VCE(sat)
Unit
2.6
mA
mA
0.4
Volts
(3) Measured usmg a 11.28 mm diameter detector placed 21 mm away from the device under test.
150
2.6
==~~LSEDIII
i~ =1 ~ !6lc "'-
~ 2.3
~
\
~
"o
-40
o
50
TA, AMBIENT TEMPERATURE (OC)
2.0
~
1\2mw/OC
TA = 250h
~ 1.7
@
\
~
f2
1.4
I-
~1.1
\
100
Figure 1. Power Dissipation
r-
0.8
:::::~~
--
I-- I-f-
1.0
I
./
:...........:;,1-'-
TA= 100°C
100
If, FORWARD CURRENT (mA)
10
"
~,/
.1
I
Figure 2. LED Forward Voltage versus
Forward Current
7-14
1000
MOC9000
1.0
5
0.9
~
0.8
:Iia:
0.7
~
0.6
:::J
0
l-
=>
!50
/
I
0.4
a:
w 0.3
~
I>.
0.2
1>."
0.1
o
\
II
0.5
I
~
.---.
I
10
/ "\.
\
I
\
\
./
~
~
w 6.0
a:
a:
=>
u
\
I
~
~
~
!i:
(!j
4.0
:::J
\
-='
~
........
~
"""
~
.., WAVELENGTH (nm)
2.0
H=5mW/cm2
r:
I
L
20
Figure 4. Transistor Collector Current versus
Collector-Emitter Voltage
15
./
10
:::J
o
TA = 25°C
/'
I
/ ' '"
./
1
5.0
20
10
VCE, COLlECTOR· EMITTER VOLTAGE (VOLTS)
10
TA = 25°C
VCE=5V
-='
. / H = 0.5 mW/em2 I
o
o
~
25
!i:
(!j
H-2mW/em2
H=l mW/cm2
'I
Figure 3. LED Relative Power Output
versus Wavelength
~
w
a:
a:
=>
u
-
8.0
I
\
~
~
GaAsSource
TA = 25°C
TA = 25°C
'F=SOmA -
./
V
/"
~
w
a:
a:
=>
u
a:
/'
""
"''-
1.0
:;2
~
/'
8
0.1
--
'= IF-20mA 1'... . . . . ......
...... ...!.:,somA
IF=10mA
"
0.01 0
so
'E, IRRAOIANCE (mW/Cm2{TUNGSTEN SOURCE (2870°1<))
Figure 5. Transistor Collector Current
versus Irradiance
Figure 6. Current Transfer with Devices
Optically Coupled
10
20
10
- --
20
30
DISTANCE (em)
0.5
40
1.0
TA-25°C ::
I
~
a:
I
/"
/
-..."\.
/ / / ~\
G
;
a: 0.1
8
."\IF= so mA
IC
/
;:;,
""
""\j
V./
0.01
-3.0
VTF =10mA
-2.0
-1.0
1.0
IF=20mA
'i
2.0
1 k.Q
3.0
DISTANCE (em)
Figure 7. Translational Optical Coupling at 5 mm
Separation (Lens to Lens)
Figure 8. Test Circuit for Figures 6 and 7
7-15
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MRD300
MRD310*
Photo Detectors
Transistor Output
"'Motorola Preferred Device
The MRD300 and MRD310 are designed for applications requiring radiation sensitivity
and stable characteristics.
PHOTO DETECTORS
TRANSISTOR OUTPUT
NPN SILICON
Features:
• Popular TO-18 Type Package for Easy Handling and Mounting
• Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
• Minimum Light Current 4 mA at H = 5 mW/cm2 (MRD300)
• External Base for Added Control
• Annular Passivated Structure for Stability and Reliability
Applications:
• Industrial Processing and Control
• Shaft or Position Readers
• Optical Switching
• Remote Control
•
•
•
•
,I
Light Modulators
Punched Card Readers
Logic Circuits
Counters
CASE 82-05
METAL
STYLE 1
MAXIMUM RATINGS (TA = 25'C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Volts
Emitter-Collector Voltage
VECO
7
Volts
Collector-Base Voltage
VCBO
80
Volts
Po
250
2.27
mW
mWrC
TA
-55to +125
·C
Tstg
-65 to +150
·C
Total Device Dissipation @ TA = 25'C
Derate above 25'C
Operating Temperature Range
Storage Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (TA
= 25'C unless otherwise noted)
Symbol
Characteristic
Collector Dark Current (VCE
= 20 V,
H = 0) TA
TA
Collector-Base Breakdown Voltage (lC
=
Collector-Emitter Breakdown Voltage (lC
Emitter-Collector Breakdown Voltage (IE
= 25'C
= 100'C
ICEO
Min
-
Typ
Max
Unit
5
4
25
nA
pA
-
100 pAl
V(BR)CBO
80
120
-
Volts
=
=
100 pAl
V(BR)CEO
50
85
Volts
100 pAl
V(BR)ECO
7
8.5
-
Volts
OPTICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
-
mA
-
mA
2
2.5
I's
2.5
4
I's
Light Current
(VCC = 20 V, RL
10 Ohms) Note 1
MRD300
MRD310
IL
=
4
1
7
3.5
Light Current
(VCC = 20 V, RL
100 Ohms) Note 2
MRD300
MRD310
IL
=
-
2.5
0.8
-
Photo Current Rise Time (Note 3)
(RL = 100 Ohms, IL = 1 mA peak)
tr
-
Photo Current Fall Time (Note 3)
(RL = 100 Ohms, IL = 1 mA peak)
tf
-
-
NOTES: 1. Radiation flux density {HI equal to 5 mW/cm 2 emitted from a tungsten source at a color temperature of 2870 K.
2. Radiation flux density (HI equal to 0.5 mW/cm 2 (pulsed) from a GaAs (gallium-arsenide) source at A = 940 om.
3. For unsaturated response time measurements, radiation is provided by pulsed GaAs (gallium-arsenide) light-emitting diode fA "'" 940 nm) with a
pulse width equal to or greater than 10 microseconds (see Figure 2) Il = 1 rnA peak.
7-16
MRD300, MRD310
TYPICAL CHARACTERISTICS
20
!3~
MRD300
V
16
i
J
VCC = 20 V
RL = 100
TUNGSTEN SOURCE
COLOR TEMP = 2870K
o-
~
-
I-
.-/
2
0.5
MRD310
'"~ 0.41---i-++++-H-t-Hf-+-.f--.IJII-H
\-++f-+-+--4
/
§8
0.21- IL
10
20
0.3
10
20
30
~
-...
~
--
a
V
/'
NORMALIZED TO
TA = 25°C
~
-
500?-
:--..
,s.1
0.2
10000-
4
>-
,/'
25°C- f--
r-
;=
~
./
=
NOTE 3
1
./
1
250 0 1000_
50?_
o
o
-100 -75 -50
-25
25
50
75
TA, AMBIENT TEMPERATURE 1°C)
100
125
150
0.2
-
--
Figure 4. Rise Time versus Light Current
TA = 25°C
+
40
10
1000
::::::
~
-
I
p-
H
~VCE
0
20 V
0.1
I
I
a::~
5000
-... ......
..::::::::-
0.01
§
I
2500
l~g_
8~
0.001
ta
0.0001
9
I
o
20
IL' LIGHT CURRENT ImA)
NOTE 3
-.;:
10
0.5
Figure 3. Normalized Light Current
versus Temperature
0.2
2
TA
/'
0.8
0.4
1
Figure 2. Collector-Emitter Saturation Characteristic
./
0.6
0.5
Figure 1. Light Current versus Irradiance
~ 1.2
~
o~~I~I~I~~~~~UU~-L=~
50
H, RADIATION flUX DENSITY ImWlcm2)
53
~
~
" \,
0.5 mA
'11111
H, RADIATION flUX DENSITY ImWlcm2)
1.8
1.6 _~CC = 20V
NOTE 1
_1.4
o
5mA\
0.6 f-..+-H-+-f-+I!--+l-+-+--+-\l-!-++l-I--+--+---1
I-5
2mA
~
/'
V
1 mA
~
/
II
TUNGSTEN SOURCE
COLOR TEMP = 2870K
I
~
II
f.-+-H+H...J-4--+-4---,\-+
1\
0.8I-H-l-f-+JI+--4H-+---1++
\--1--1-+++--+-+--1
0.00001
10
0.5
-50
20
IL' LIGHT CURRENT ImA)
-E
E
50
TA, AMBIENT TEMPERATURE
~
100
lOCI
Figure 6. Dark Current versus Temperature
Figure 5. Fall Time versus Light Current
7-17
125
MRD300, MRD310
100
100
L
"""" \
L
80
j
/
/
\
I
I
I
\
r\
\
/
/
o
0.5
0.6
0.7
0.8
0.9
A, WAVELENGTH (I'm)
1.1
40
1.2
Figure 7. Constant Energy Spectral Response
I
\
\
\
\
\
I
20
o
0.4
,
"\
I
\
./
20
\
L
I
30
20
. 10
0
10
ANGLE (DEGREES)
\
\
20
30
Figure 8. Angular Response
Vcc
+2oV
hv~
IL=
N.C.o---""'l
I
---- ---------90%
lmA----1
OUTPUT
If
Figure 9. Pulse Response Test Circuit and Waveform
7-18
40
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
Photo Detector
MRD360
Darlington Output
Motorola Preferred Device
The MRD360 is designed for applications requiring very high radiation sensitivity at low
light levels.
PHOTO DETECTOR
DARLINGTON OUTPUT
NPN SILICON
Features:
• Popular TO-18 Type Hermetic Package for Easy Handling and Mounting
• Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
• Minimum Light Current 12 rnA at H = 0.5 mW/cm 2
• External Base for Added Control
• Switching Times t, @ IL = 1 rnA peak = 40 /LS (Typ)
tt @ IL = 1 rnA peak = 60 /LS (Typ)
Applications:
• Industrial Processing and Control
• Shaft or Position Readers
• Optical Switching
• Remote Control
MAXIMUM RATINGS (TA
=
•
•
•
•
Light Modulators
Punched Card Readers
Logic Circuits
Counters
CASE 82-05
METAL
STYLE 1
25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Emitter-Base Voltage
VEBO
10
Volts
Collector-Base Voltage
VCBO
50
Volts
Light Current
'L
250
mA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
250
2.27
mW
mWrC
TA
-55 to + 125
°c
Tstg
-65 to +150
°c
Rating
Operating Temperature Range
Storage Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ICEO
-
10
100
V{BR)CBO
50
40
V{BR)EBO
10
-
Volts
V{BR)CEO
-
IL
12
20
-
mA
VCE{sat)
-
-
1
Volt
Photo Current Rise Time (Note 2)
(RL = 100 ohms, IL = 1 mA peak)
tr
-
40
100
/Ls
Photo Current Fall Time (Note 2)
(RL = 100 ohms, IL = 1 mA peak)
tf
-
60
150
/LS
Wavelength of Maximum Sensitivity
As
-
0.8
-
/Lm
= 25°C
Collector-Base Breakdown Voltage (lC = 100 !LA)
Collector-Emitte, Breakdown Voltage (lC = 100 !LA)
Emitter-Base Breakdown Voltage (IE = 100 pAl
Collector Dark Current (VCE
=
10 V. H = 0) TA
Unit
nA
Volts
Volts
OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Light Current
(VCC = 5 V. RL
=
10 Ohms) Note 1
Collector-Emitter Saturation Voltage
(lL = 10 mA, H = 2 mW/cm 2 at 2870K)
NOTES: 1. Radiation flux density (H) equal to 0.5 mW/cm 2 emitted from a tungsten source at a color temperature of 2870 K.
2. For unsaturated response time measurements, tadiation is provided by pulsed GaAs (gallium-arsenide) light-emitting diode (A = 940 nm) with a
pulse width equal to or greater than 500 microseconds (see Figure 6) IL = 1 rnA peak.
7-19
MRD360
TYPICAL CHARACTERISTICS
100
50
,,MRD360
,/""
./
-
en
~
~
~
~
~
/
1
MUM
"I
1
V
M
0.9
~
8 0.7
U
0.3
0.5 0.7 1
2
H, RADIATION FLUX DENSITY ImW/cm21
Figure 1. Light Current versus Irradiance
Figure 2. Collector-Emitter Saturation Characteristic
,
1 mW/cm 2
H
"
ll!
a: 10
I
<.>
~
I
i·5mW/fm2
i'5
:::>
....
:>:
::::I
'".d>
1
,
o
0.2
0.1
10
20
H@2870K
a
g
0.3
I
.d> 0.2
".
VCE ~ 5V
_
H ~ 0.5 mW/cm 2 @ 2870K _
-50 -40 -W
W
!Z
100
~
80
10
/"
II
I
t:.
III
z
"";1§ 1 pA
~
50
V
ll!
~
- f--
o :~
10V
I
I
I
50
80
~
I
m
140
Figure 4. Normalized Light Current
versus Temperature
100
H
VCE
40
TA, AMBIENT TEMPERATURE lOCI
1000
<.>
L
0.1
10
/'
./
!i:
2345678
VCE, COLLECTOR-EMITIER VOLTAGE IVOLTSI
10
./
./
0.7
0.5
0.1 mW/cm 2
NORMALIZED TO
TA 25°C
7
V
0.2 mW/cm2
I
r=
~
Figure 3. Collector Characteristics
:::>
20mA
10mA
SmA
2mA
tl
H @2870K
....z~
~
IL
> 0.5
100
30
-
H, RADIATION FLUX DENSITY ImW'cm21
~
50
r-
\
g
VCE ~ 5V- f - H (t, 2870K_ f - TA ~ 25°C_ f - -
,/
U
1.3
§! 1.1
/'
U
1.5
~
~
~
ll!
/
"- r\
\
\
/
40
,
\
/
20
\
/
\
1
0.1 nA
-10
20
40
60
80
TA, AMBIENT TEMPERATURE lOCI
100
120 130
o
0.4
0.5
0.6
0.8
0.9
0.7
A, WAVELENGTH IJLml
1.1
Figure 6. Constant Energy Spectral Response
Figure 5. Dark Current versus Temperature
7-20
1.2
MRD360
1/
0.9
0.8
_ 0.7
/
~ 0.5
~
\
~
\
J
J
~ 0.4
~
~ 0.3
:\
I
~ 0.2
o
'"
/
-
5
w w
H 20mWlcm2
= -r-l0 ::::::::::;
5
'"
=>
'"
u
2
1
2810K
.i\'i
0
2
~
2
>-
5
= TUNGSTEN SOURCE TEMP
\
\.
/
t'....
0.3
0.4
0.5
0.6
0.1
0.8
0.9
A, WAVELENGTH (I'm)
Figure 5. Relative Spectral Response
7-23
1.1
1.2
MRDSOO, MRDS10
+v
H~
t---~Vsign.1
50!}
Figure 6. Typical Operating Circuit
7-24
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
Photo Detector
MRD821
Diode Output
Motorola Preferred Device
This device is designed for infrared remote control and other sensing applications, and
can be used in conjunction with the MLED81 infrared emitting diode.
Features:
•
•
•
•
•
Low Cost
Designf;ld for Automated Handling and Accurate Positioning
Sensitive Throughout the Near Infrared Spectral Range
Infrared Filter for Rejection of Visible Light
High Speed
PHOTO DETECTOR
DIODE OUTPUT
Applications:
• Remote Controls in Conjunction with MLED81
• Other High Speed Optical Sensing Applications
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current -
Continuous
Total Power Dissipation @ TA = 25·C
Derate above 25·C
Ambient Operating Temperature Range
Storage Temperature
Lead Soldering Temperature,
5 seconds max, 1116 inch from case
Symbol
Value
Unit
VR
35
Volts
IF
100
mA
PD
150
3.3
mW
mWrC
TA
-30 to +70
·C
Tstg
-40 to +80
·C
-
260
·C
Min
CASE 381-01
STYLE 1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Dark Current (VR
Capacitance (f
=
=
10 V)
1 MHz, V
= 0)
Symbol
Typ
Max
Unit
ID
-
3
30
nA
CJ
-
175
-
pF
Min
Typ
Max
Unit
940
nm
50
-
pAlmW/cm 2
-
%/K
-
p.A
OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
S
.:l.S
-
0.18
rp
-
±70
'000 lux')
IS
-
50
1000 lux1)
VL
-
0.3
Spectral Range
Sensitivity (A
Temperature Coefficient of Sensitivity
Acceptance Half·Angle
Open Circuit Voltage (Ev
Amax
.:l.A
= 940 nm, VR = 20 V)
Short Circuit Current (Ev
Symbol
-
Wavelength of Maximum Sensitivity
=
=
170
nm
V
NOTE 1. Ev is the illumination from an unfiltered tungsten filament source, having a color temperature of 2856K (standard light A. in accordance with
DIN5030 and IEC publication 306-1).
7-25
MRD821
TYPICAL CHARACTERISTICS
1 140
~::
u
m120
a
~100
v
~
~80
I
I!!
~
~ 60
1
~4O
~
'" '\
at::
~
\
J
20
800
900
WAVELENGTH (nm)
U
>--
\
.Y
700
y
100
V
/'
a:
1000
~Jil
.....
80
/
60
./
40
20
o./
o
1100
Figure 1. Relative Spectral Sensitivity
~
.,., /
1000
1500
Ev, ILLUMINANCE (LUX)
500
2000
Figure 2. Short Circuit Current versus Illuminance
--
0.4
/
L
1
500
Figura 3. Angular Response
1
--
10- 1
-10
1
103
13102
;::l 101
«
~ 100
~~
.9
20
30
VR, REVERSE VOLTAGE IV)
~
2500
~
w
<.:>
TA
2000
Figure 4. Open Circuit Voltage versus Illuminance
3
2
1000
1500
Ev, ILLUMINANCE (LUX)
10- 1,...
25'C
40
"...
---
V
f..-
---
..VR
20
40
60
TA, AMBIENT TEMPERATURE ('C)
50
Figure 5. Dark Current versus Reverse Voltage
~
10 V
80
Figure 6. Dark Current versus Temperature
7-26
MRD821
200
I
60
f = 1 MHz
f--- EV = 1000 LUX
--
.......
1,\
\
\
-
0
I-- t--
10
20
30
VR. REVERSE VOLTAGE (V)
0
40
0
50
Figure 7. Capacitance versus Reverse Voltage
500
400
300
200
100
0.1
.......
r"o..
~
'\ 1\
..... '\ \
~, \
\
0.2
0.3
VF. FORWARD VOLTAGE (V)
0.4
0.5
Figure 8. Light Current versus Forward Voltage
7-27
MOTOROLA
SEMICONDUCTOR-----------TECHNICAL DATA
MRD901
Series
Advance Information
Phototransistor Detector
Motorola Preferred Devices
The MRD901 series Silicon phototransistor detectors are multi-purpose devices capable for use in many applications. It is a side looking package that is
designed for use in PC board mounted interruptive and reflective sensing applications. The device is ideally suited for use with an MLED91 series LED as a
light source.
PHOTOTRANSISTOR
DETECTOR
Features:
•
•
•
•
LowCost
Well Suited For Use with Any MLED91 Series Infrared LED
New Die Placement Technology Improves Acceptance Angle Symmetry
New Mold Technology Improves Performance Under Variable
Environmental Conditions
• New Lens Design Offers Improved Optical Performance
• EIA 468-A Compliant Tape and Reel Option Available
(MRD901 RLRE and MRD901 ARLRE)
CASE 422A-Ol
STYLE 2
Applications:
• Low Bit Rate Communication Systems
• Keyboards
• Coin Handlers
• Daylight Sensor
• Paper Handlers
• Touch Screens
• Shaft Encoders
• General Purpose Interruptive and Reflective Event Sensors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
30
Volts
Po
150
2.0
mW
mW/"C
Ambient Operating Temperature
Top
-40to 100
"C
Storage Temperature
Tstg
-40to 100
"C
TL
260
"C
Collector-Emitter Voltage
Device Power Dissipation
Derate above 55"C
@
TA
=25"C (1)
Lead Soldering Temperature (2)
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)
Characteristic
Collector Dark Current (VCE =10 V, H =0 (dark))
Collector-Emitter Breakdown Voltage (IC =100 jJA)
OPTICAL CHARACTERISTICS (TA
Min
Typ
Max
10
-
10
100
Unit
nA
BVCEO
30
-
-
Volts
Symbol
Min
Typ
Max
Unit
IL
0.1
0.7
1.0
-
2.6
mA
mA
-
-
0.4
Volts
=25"C unless otherwise noted)
Characteristic
Collector Light Current (VCE =5.0 V,
H =500 I1W/sq cm @ 940 nm)
Symbol
MRD901
MRD901A
Saturation Voltage (H = 10 mW/sq cm,
Wavelength =940 nm, IC =2.0 mA, VCE =5.0 V)
VCE(sat)
-
(1) Measured with device soldered Into a typIcal printed Circuli board.
(2) Maximum exposure time: five seconds. Minimum of 1/16 inch from the case. A heat sink should be applied In order to prevent the case temperature from exceeding 100a C.
This document contains information on a new product. Specifications and infolTT1alion herein are subject to change without notice.
Prefenad devices are Motorola recommended choices for future use and best overall value.
7-28
MRD901 Series
TYPICAL CHARACTERISTICS
200
10
GaAs Source
TA=2SoC
Iz
150
~I"C
a
iii'a:
en
~
100
§.
w 6.0
a:
a:
:::>
<>
I:t:
50
~
<5
o
o
50
TA, AMBIENTTEMPERATURE (0C)
f
4.0
C!I
:::J
a..
-40
H=SmW/cm2
IZ
~
a:
w
~
;;: 8.0
2.0
I
H =2mW/cm2
M'
o
o
100
10
Figure 2. IC versus Vce
100
25
TA =2SoC
VCPSV
20
I:t:
10
a:
a:
:::>
<>
L
/
C!I
:::J
~
5.0
o
/
./
O.S
./
/"
l
"'"
\~
10
a:
a:
<>
/
:::>
/
--
A
I:t:
_!I
1.0 ~ IF-20mA
C!I
:::J
--,..........
............
~
IF = SOmA
0.1
20
I
o
~"
IF=100mA
!z
w
10
VCE=SV
TA = 2SoC
VCE-SV
//
l
15
20
VCE, COLLECTOR·EMITTERVOLTAGE (VOLTS)
Figure 1. Power Dissipation
!z
w
. / H = O.S mW/cm2 -
H= 1 mW/cm2
I
10
20
-----
30
40
IE, IRRADIANCE (mW/cm2fTUNGSTEN SOURCE (2870°1<))
LENS TO LENS DISTANCE (mm)
Figure 3. Collector Current versus Irradiance
Figure 4. Coupled Characteristics of
MLED91 and MRD901
100
/
'-
"-""
/
I
I
I
,I
0
0
\
\
\
\
\
0
60
40
20
0
20
40
ANGLE (DEGREES)
Figure 5. Angular Response
7-29
60
--
SO
MOTOROLA
SEMICONDUCTOR _ _ _ _ _ _ _ _ _ _ __
TECHNICAL DATA
Advance Information
MRD911
PhotoDarlington Detector
The MRD911 Silicon photodetector is a high sensitivity, multi-purpose
photodetector. Its side-looking package is designed for use in PC board mounted
interruptive, reflective, and light level sensing applications. The device is ideally
suited for use with an MLED91 series LED as a light source.
Motorola Preferred Device
Features:
• LowCost
• Well Suited For Use with Any MLED91 Series Infrared LED
• New Mold Technology Guarantees Improved Performance Under Variable
Environmental Conditions
• New Die Placement Technology Improves Acceptance Angle Symmetry
• High Sensitivity
• EIA 468-A Compliant Tape and Reel Option Available
CASE 422A-G1
STYLE 2
Applications:
• Low Bit Rate Communication Systems
• Keyboards
• Coin Handlers
• Daylight Sensor
• General Purpose Interruptive and Reflective Event Sensors
• Paper Handlers
• Touch Screens
• Shaft Encoders
• Light Level Sensing
_rgr:---I
2
-I
1
L ___ _ 1
1
1
MAXIMUM RATINGS (TA = 25'C unless otherwise noted)
Rating
Collector-Emitter Voltage
Total Device Dissipation @TA=25'C
Derate above 25'C (1)
Operating and Storage Junction Temperature Range
Lead Soldering Temperature (5 sec. max, 1/16" lrom case) (2)
Symbol
Value
Unit
VCEO
60
Volts
Po
150
2.0
mW
mWI'C
TJ. Tstg
-4Oto+100
'C
TL
260
'C
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Symbol
Min
Typ
Max
10
-
100
V(BR)CEO
60
-
Cce
-
3.9
Symbol
Min
Typ
IL
5.0
25
-
rnA
-
125
-
Ils
-
150
-
VCE(sat)
-
0.75
1.0
AS
-
0.8
-
Characteristic
=10 V, H = 0)
Collector-Emitter Breakdown Voltage (IC =1.0 rnA, H = 0)
Collector Dark Current (VCE
Capacitance (VCC = 5.0 V, I = 1.0 MHz)
-
Unit
nA
Volts
pF
OPTICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Characteristic
Collector Light Current (VCE = 5.0 V, H = 500 IlW/cm2, A = 940 nm)
Turn-On 11me
I
H = 500 IlW/cm2, VCC = 5.0 V
ton
Turn-Off 11me
I
RL = 100(1
loll
Saturation Voltage (H = 500 IlW/cm2, A = 940 nm, IC = 2.0 rnA, VCC = 5.0 V)
Wavelength 01 Maximum Sensitivity
(1) Measured with device soldered Into a typical printed circuli board.
(2) Heat sink should be applied to leads during soldering to prevent case temperature from exceeding 10000.
This document contains information on a new product. Specifications and infonnalion herein are subject: to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
7-30
Max
Unit
Volts
Il m
MRD911
TYPICAL CHARACTERISTICS
200
§'
§. 150
z
'"a:i5
<5
'"c..z
0
""
50
c..
o
o
50
TA. AMBIENT TEMPERATURE (0C)
-40
/ "'\.
\
80
UJ
100
UJ
~
~
~/OC
0
~
en
,
100
I
I
I
I
I
•
60
S3
a:
UJ
>
~UJ
a:
40
20
100
60
40
>z
30
UJ
a:
a:
=>
<.)
a:
~
20
8
10
~
20
0
20
40
60
140
--
VCE=5V
A,=94Onm
TA = 25°C
~
/
~
H = 0.5 mW/em2
5.0
10
l>-
--
H = 1 mW/em2
i?
o
o
\
\
\
Figure 2. Angular Response
40
§.
\
ANGLE (DEGREES)
Figure 1. Power Dissipation
<'
\
15
VCE=5V
TUNGSTEN SOURCE 12870°K)
TA=25°C
/
120
z 100
a:
a: 80
UJ
"".,-
=>
<.)
a:
§
80
0
40
~
<.)
i?
L
V
V
V
/"
/
20
o
o
I
/
VCE. COLLECTOR EMITTER VOLTAGE (VOLTS)
6.0
8.0
10
12
14
16
H. RADIANT INTENSITY 12870°K). mW/em2
Figure 3. Collector Current versus
Collector-Emitter Voltage
Figure 4. Collector Current versus
Radiant Intensity
20
2.0
4.0
1.0
g
!z
!l:!
a:
0.1
~I-o.
~
---
IF=50mA
G
~
VCE=5V
A,=940nm
TA= 25°C
-.......: ~
0.01
IF=2OmA
IF=10mA
8
i? 0.001
1.0
2.0
3.0
d. DISTANCE (em)
IF=5mA-=:
I'
4.0
Figure 5. Collector Current versus Distance
when Coupled with a Typical MLED91
7-31
5.0
18
20
MOTOROLA
SEMICONDUCTOR-----------TECHNICAL DATA
Advance Information
PINPhotodiode Detector
MRD921
Motorola Preferred Device
The MRD921 Silicon Photodiode detectors are high speed, multi-purpose
devices for use in multiple applications. The side-looking package is designed for
PC Board mounted interruptive, reflective, and light level sensing. The device is
ideally suited for use with an MLED91 series LED.
Features:
• LowCost
• Well Suited For Use with Any MLED91 Series Infrared LED
• New Mold Technology Guarantees Improved Performance Under Variable
Environmental Conditions
• New Die Placement Technology Improves Acceptance Angle Symmetry
• EIA 468-A Compliant Tape and Reel Option Available (Specify RLRE Suffix.)
CASE 422A-ol
STYLE 1
Applications:
• Low Bit Rate Communication Systems
• Keyboards
• Coin Handlers
• Daylight Sensor
• General Purpose Interruptive and Reflective Event Sensors
• Paper Handlers
• Touch Screens
• Shaft Encoders
MAXIMUM RATINGS (TA
=25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VR
100
Volts
Po
150
2.0
mW
mW/"C
TJ, Tstg
-4Oto +100
°C
TL
260
°C
Reverse Voltage
Total Power DiSSipation @ TA
Derate above 25°C (1)
=25°C
Operating and Storage Junction Temperature Range
Lead Soldering Temperature (5 sec. max, 1/16H from case) (2)
ELECTRICAL CHARACTERISTICS (TA
=25°C unless otherwise noted)
Characteristic
Dark Current (VR
=20 V, RL =1.0 MO) (3)
TA =25°C
TA =100°C
Fig. No.
Symbol
3and4
10
Reverse Breakdown Voltage (lR =10 IIA)
-
Forward Voltage (IF =50 mAl
-
Series Resistance (IF =50 mAl
Total Capacitance (VR =20 V, f = 1.0 MHz)
Min
Typ
Max
-
0.06
14
10
100
200
-
VF
-
-
1.1
Volts
Rs
-
8.0
-
Ohms
CT
-
3.0
-
pF
V(BR)R
5
(1) Measured with the device soldered Into a typical printed circuit board.
(2) Heat sink should be applied to leads during soklering to prevent case temperature from exceeding 100"C.
(3) Measured under dark conditions. (H .. 0).
This document contains infonnation on a new product. Specifications and information herein are subject to change withOut notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
7-32
Unit
nA
Volts
MRD921
OPTICAL CHARACTERISTICS (TA = 25°C)
Fig. No.
Symbol
Min
Typ
Light Current (VR = 20 V) (4)
Characteristic
2
IL
1.5
4.0
Sensitivity (VR = 20 V) (5)
-
S(1.= 0.8 11m)
S(1. = 0.94 11m)
-
5.0
1.2
Response Time (VR = 20 V, RL = 50 il)
-
t(resp)
1.0
Wavelength of Peak Spectral Response
6
-
1.s
Max
Unit
-
J!A
flA/mWI
cm2
-
0.8
ns
11m
(4) Radiation Flux Density (H) equal to 5.0 mW/cm2 emittecl"from a tungsten source at a color temperature of 2870 K.
(5) Radiation Flux Denslty (H) equal to 0.5 mW/cm2.
TYPICAL CHARACTERISTICS
5.0
200
~
.§. 150
~rc
z
Q
~
en
!'12
c
a:
w
~
0..
6
100
0..
o
o
-40
50
TA, AMBIENT TEMPERATURE (OC)
..
4.0
w
3.0
H-5mW/cm2
~
....
z
a:
a:
'"
50
1.-94Onm
TA - 25°C
=>
u
....
:I:
C!)
2.0
H_2mW/cm2
::J
-=' 1.0
H-l
o
o
100
20
40
60
0.2
TA - 25°C
H-O - -
1000
.. 0.15
.s
100
~
13
w
10
'"a:<3
1.0
a:
a:
0.1
50
75
100
TA, TEMPERATURE (OC)
125
150
V ...-
0.1
IEo.05
E
0.01
25
100
80
Figure 2. Light Current versus Reverse Voltage
10,000
a:
a:
=>
u
-
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Power Dissipation
~
....
z
~w/cm2
H- 0.5 mW/cm2
,.,.......
....-
/"
/,/
/V
Vw
~
~
40
50
00
ro
00
00
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Dark Current versus Temperature
Figure 4. Dark Current versus Reverse Voltage
7-33
~
MRD921
8.0
a:-
6.0
w
5.0
~
4.0
100
.1
.1
'.lMHz _
TA·25°C
7.0
~
.So
0
~
i3
ti
70
!C
60
3.0
f3
0
./
10
"'
<-
/"
14
0
CI
::J
0.3
'\.
1.2
100
VCE·5V _
TA·25°C
18
w
~
1/
Figure 6. Relative Spectral Response
20
~
\
~
~
Figure 5. Capacitance versus Voltage
<-
\
L
o
~
IF·~mA -
'\
\
/
10
o
o
TA·25°C
\
~
w
zUJ
\
/: \.
90
IF·~mA
IF-~mA
----
J~
IF-5mA
0.1
o
5.0
10
15
d, DISTANCE (em)
Figure 8. Light Current versus Distance
when Coupled with a Typical MLED91
Figure 7. Light Current versus Irradiance
7-34
=
~
MOTOROLA
SEMICONDUCTOR-------_ _ _ _ __
TECHNICAL DATA
Advance Information
MRD950
Digital Output Detector
Features:
Motorola Preferred Device
•
•
•
•
•
•
•
•
Popular Low Cost Plastic Package
High Coupling Efficiency
Wide VCC Range
Ideally Suited for MLED91 Emitter
Usable to 125 kHz
Open Collector Output
Compatible with 3 Volt Systems
New Mold Technology Improves Performance Under Variable
Environmental Conditions
• New Lens Design Offers Improved Optical Performance
• EIA 468-A Compliant Tape and Reel Option Available (MRD950RLRE)
PHOTO DETECTOR
SCHMITT TRIGGER
OUTPUT
Applications:
•
•
•
•
IR Remote Control Receiver
Shaft Encoders
Position Sensors
Interruptive Sensors
CASE 422-01
Style 3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Output Voltage Range
Vo
0-16
Volts
Supply Voltage Range
Volts
Rating
VCC
3-16
Output Current
10
50
rnA
Device Dissipation
Derate above 25°C (1)
Po
150
2.0
mW
mW/"C
Maximum Operating Temperature
Storage Temperature Range
Lead Soldering Temperature (5 Seconds Maximum) (2)
TA
-40to+l00
°C
Tstg
-40to+l00
°C
TL
260
°C
"Measured with devICe soldered Into a typical PC board.
DEVICE CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
lYP
Max
Unit
VCC
3.0
-
16
Volts
Supply Current with Output High, Figure 4
(IF = 0, VCC = 5.0 V)
ICC(off)
-
1.0
5.0
rnA
Output Current, High
(IF= 0, VCC = Vo= 15 V, RL = 270 Q)
10H
-
-
100
IlA
Operating Voltage
(1) Measured with device soldered into a typical printed circuit board.
(2) Maximum exposure time: five seconds. Minimum of 1/16 Inch from the case. A heat sink should be applied in order to prevent the case temperature
from exceeding 100°C.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
7-35
MRD950
COUPLED CHARACTERISTICS (TA = 0 - 70°C)
Characteristic
Light Required to Trigger (Tungsten Source, 2870 K)
The foltowing characteristics are measured with an MLED91 emitter at a separation distance of 4.0 mm (0.155 inches) with the lenses of the
emitter and detector on a common axis within 0.1 mm and paraltel within 5 degrees.
ICC(on)
-
1.6
5.0
rnA
Output Voltage, Low
(RL = 270 (1, VCC = 5.0 V, IF = IF(on»
VOL
-
0.2
0.4
Volts
Threshold Current, ON
(RL = 270 0, VCC = 5.0 V)
IF(on)
-
10
20
rnA
Threshold Current, OFF
(RL= 270(1, VCC =5.0 V)
IF(off)
1.0
7.5
-
rnA
Hysteresis Ratio, Figure 1
(RL = 270 0, VCC = 5.0 V)
--
IF(off)
-
0.75
-
-
Ion
-
0.75
5.0
I1S
tf
-
0.1
-
Supply Current wnh Output Low, Figure 5
(IF = IF(on), VCC = 5.0 V)
IF(on)
SWITCHING CHARACTERISTICS (TA = 25°C)
Turn-On lime
RL =2700,
VCC = 5.0 V,
IF = IF(on)
Fait lime
Turn-Off lime
Rise lime
Ioff
-
2.0
5.0
tr
-
0.1
-
6.0
fir
!:J
~
w
~
5.0
4.0
!j
~
Rl=270d
VCC=5V TA=25°C
VOH
3.0
IF(off)
IF(on)
~
0..
t-
:::>
0
6
>
2.0
1.0
VOL
o
o
0.75
1.0
2.0
INCIDENT RADIATION (NORMAUZED)
Figure
1_ Transfer Characteristics
-ICC
tr =tf=O.OII1S
Z= 500 0-----....1
MLED91
L
Figure 2_ Switching Test Circuit
7-36
MRD950
TYPICAL CHARACTERISTICS
0.50
~ 0.45
~
~ 0.35
w 0.30
(!)
TJ = 25°C
~ ./
~ 0.25
g
0.20
~
::>
0.15
5
V V
V. . . . V
~V
......:::;;~ ........
0
o ~ ro ~
V
~
:::J
~
a:
;;;.
u
V
~
::>
30
2.0
0..
0..
en
9
~
20
3.0
35
40
45
f-I
f..--
~
!--
~
I
L-- t-
I
o
50
j
TJ = 25'C
........... ~
1.0
~
~
V
~
....-
1c
t-40
a:
a:
::>
./
-? 0.05
j
4.0
0
!Z
w
TJ = - 40°C
./
----1
S-
V
V
V V
~ 0.1 0
...J
T~=85OV /
V ./
0.40
5.0
/
3.0
6.0
9.0
12
10, LOAD CURRENT (mA)
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 3. Output Voltage, Low versus Load Current
Figure 4. Supply Current versus
Supply Voltage - Output High
15
TYPICAL COUPLED CHARACTERISTICS USING MLED91
EMITTER AND MRD950 DIGITAL OUTPUT DETECTOR
10
~
~ffi
8.0
6.0
V
a:
a::
a
~
4.
0/
8::
~
9
2.0"""""'-
V
0
3.0
s~
~
::;;
V
.vI
TJ=~oC
J....---1"
..... Vl~
---
~ TJ=85°C
I
I
~
a::
1.0
9
0.6
0
fa
a::
II.
9.0
~RN.O~ THRES~OLD r-1
J
1
/'
TURN-OFF THRESHOLD
f..--
,
:I:
:I:
....
12
0.4
IF NORMAUZED TO
IF(on) @VCC=5V
0.2
o
o
15
TA=~oC
2.0
4.0
6.0
8.0
10
12
14
16
VCC, SUPPLY VOLTAGE (VOLTS)
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 5. Supply Current versus
Supply Voltage - Output Low
Figure 6. Threshold Current versus Supply Voltage
......
100
...
<"
.5-
V
!z
w
::>
I'
1/
TA=~OC
80
a::
a::
::>
u
.........
1.0
90
V
60
:I:
'"a::w
-"
40
F
-E-
.5!.
NORMAUZED TO
VCC=5V
TA=25°C
i!:II. 0.94
-20
zw
0.8
-"
0.92
-40
1.2
f.-- r--
1.04
V
~
1.4
a::
a::
a::
::>
u
-
a::
1.6
~
~
....
1.06
0.96
s-
~
I
I
6.0
9 0.98
~
-
----~
_
a::
~ 1.02
!Z
~
I I
.1
.1
TJ=-40o~
g
20
40
60
80
~
100
20
o
o
-~
~
0.5
/
1.0
L
1.5
/
2.0
TA, TEMPERATURE (OC)
d, DISTANCE (em)
Figure 7. Threshold Current versus Temperature
Figure 8. Threshold Current versus Lens to Lens
Separation Distance at 25°C
7-37
MRD950
2.5
0.25
TA=~"C
loll
2.0
~
0.2
V
~ 0.15
!:li!
F
)'"
TA=25"C
1.5
y
!:li!
F
1.0
0.1
Ion
0.5
0.05
o
o
100
1000
10000
RI, LOAD RESISTANCE (n)
Figure 9. MRD950 Switching Time versus
Load Resistance
----
----
100
If
1000
MLED91
Figure 10. MRD950 Rise Time and Fall Time
versus Load Resistance
VCC=5V
RL
270n
OUTPUT
-=
10000
RI, LOAD RESISTANCE (n)
VCC=5V
::1-
",
::1MLED91
MRD950
Figure 11. Test Circuit for Threshold Current
Measurements
RL
OUTPUT
-=
MRD950
Figure 12. Test Circuit for Output Voltage versus
Load Current Measurements
::1MLED91
K>--O OUTPUT
MRD950
Figure 13. Test Circuit for Supply Current versus
Supply Voltage Measurements
7-38
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
Photo Detector
MRD5009
Logic Output
Motorola Preferred Device
The MRD5009 incorporates a Schmitt Trigger which provides hysteresis for noise
immunity and pulse shaping. The detector circuit is optimized for simplicity of operation
and utilizes an open-collector output for application flexibility.
Features:
•
•
•
•
•
•
PHOTO DETECTOR
LOGIC OUTPUT
Popular TO-18 Type Package for Easy Handling and Mounting
High Coupling Efficiency
Wide VCC Range
Ideally Suited for Use With MLED930 Emitter
Usable to 125 kHz
Hermetic Metal Package for Maximum Stability and Reliability
Applications:
• Industrial Processing and Control
• Shaft or Position Readers
• Optical Switching
• Remote Control
• Light Modulators
•
•
•
•
Punched Card Readers
Logic Circuits
Light Demodulation/Detection
Counters
CASE 82-05
STYLE 4
MAXIMUM RATINGS (TA ~ 25"C unless otherwise noted)
Rating
Symbol
Value
Unit
Output Voltage Range
Vo
0-16
Volts
Supply Voltage Range
Volts
VCC
0-16
Output Current
10
50
mA
Device Dissipation
Derate above 25"C·
PD
250
2.27
mW
mWf'C
Maximum Operating Temperature
Storage Temperature Range
Lead Soldering Temperature (10 seconds maximum)
Symbol
Characteristic
DEVICE CHARACTERISTICS (TA
~
15 V, RL
"C
"C
TL
260
"C
Min
Typ
Max
Unit
~
270!l)
-
15
Volts
ICC(ott)
-
1
5
mA
10H
-
-
100
pA
VCC
Supply Current with Output High, Figure 4
(IF ~ 0, VCC ~ 5 V)
~
-40 to +85
-65 to +200
25"C)
Operating Voltage
Output Current, High
(IF ~ 0, VCC ~ Vo
TA
Tstg
3
(continued)
7-39
MRD5009
Characteristic
COUPLED CHARACTERISTICS ITA
Symbol
Min
Max
Typ
Unit
= 0-70·C)
Ught Required to Trigger ITungsten Source, 2870 K)
The following characteristics are measured with an MLED930 emitter at a separation distance of 8 mm 10.315 inches) with the
lenses of the emitter and detector on a common axis within 0.1 mm and parallel within 5 degrees.
ICClon)
-
1.6
5
mA
VOL
-
0.2
0.4
volts
Threshold Current, ON
IRL = 270 n, VCC = 5 V)
IFlon)
-
10
20
mA
Threshold Current, OFF
IRL = 270 n, VCC = 5 V)
IFloff)
7.5
-
mA
Hysteresis Ratio, Figure 1
IRL = 270 n, VCC = 5 V)
!.El.!!ffl.
-
0.75
-
-
1.2
5
0.1
-
-
1.2
5
0.1
-
Supply Current with Output Low, Figure 5
(IF = IFlon), VCC = 5 V)
Output Voltage, Low
IRL = 270 n, VCC = 5 V, IF
=
IFlon))
SWITCHING CHARACTERISTICS ITA
IFlon)
25·C)
=
Turn-On Time
ton
= 2700,
VCC = 5 V,
IF = IFlon)
RL
Fall Time
1
Turn-Off Time
Rise Time
tf
toff
tr
p.s
VOH
IF(off)
IFlon)
RL = 2700
VCC = 5V TA = 250(;
VOL
o
o
0.75
INCIDENT RADIATION (NORMALIZED)
Figure 1. Transfer Characteristics
!
_ICC
IFrIOn)
J==L
I
I
I
I
I
I
I
I
Vin
t, = tl = 0.01 p.s
Z = 50 n 0 - - - - - - - '
I
I
I
I
I
I
I
I
I
r--lloff)I
L -.J ton
II
1
Vo
I
"T"----':-:-,
II
I I
-i
Figure 2. Switching Test Circuit
7-40
I-tl
I
I
I
I
I
I
I I
I
I
I
-I
I
I--t,
I
MRD5009
TYPICAL CHARACTERISTICS
0.50
/
0.45
~ 0.40
iJ
§ 0.35
~
~
TJ
0.30
~ 8~y
V
25°C
X. / '
~ 0.25
§! 0.20
:=~ 0.15
/' /
V
,,/ /
V . . . .V
....... ~ V
=>
00.10
~O.05
0.00 ~ ~
10
o
TJ
./"
/'
L
!--
TJ
V
/
..............
----
TJ
o
40
45
50
TJ
6
3
Figure 3. Output Voltage, Low versus Load Current
~40oe
!--
_
I----- !----
~ J50e
~
I--
20
25
30
35
10, LOAD CURRENT ImAI
~
....--r
V
~ ~40oe
I-""
15
-
-
V
I-- I---
-+--r-~
85°C
15
9
12
Vee, SUPPLY VOLTAGE IVOLTSI
Figure 4. Supply Current versus Supply Voltage Output High
TYPICAL COUPLED CHARACTERISTICS USING MLED930
EMITTER AND MRD5009 DIGITAL OUTPUT DETECTOR
10
I
TJ
I
V
/'
V
-
..............
o
~
-4doe
~
Yl
3
~
-
~
~
1
!z
~
=>
./
0.8
~
u
9 0.6
o
'"
Jf. 0.2
12
15
TUIRN-OFF
~HRESHO~D
I
r
o
o
I
I
L
I
6
8
10
12
Vee, SUPPLY VOLTAGE IVOLTS)
Vee, SUPPLY VOLTAGE (VOLTSI
Figure 5. Supply Current versus Supply Voltage Output Low
JHRESHOlD
IFI
TO I
IFlonl AT Vee ~ 5 V
TA ~ 25°C
~ 0.4
I
I
T~RN.ON
NORMA~IZED
:I:
85°C
I
I
-
1.2
o
I-- r--
1--1
TJ
:iii
~
f...--
TJ ~ 25°C
I J 1
~1.4
..............
....... Vl----J--
e-
...........--
V-
I
14
16
Figure 6. Threshold Current versus Supply Voltage
1.06
5
~
1.04
:iii
V
::E
~1.02
~
......-
1
V
.......
,/
II:
a 0,98
~
V
,/
~
ill 0.96
......-
NORMALIZED TO Vee ~ 5 V
TA ~ 25°C
-
V
:I:
~O.94
0.92
~40
1
~20
20
40
TA, TEMPERATURE lOCI
60
80
100
1
Figure 7. Threshold Current versus Temperature
-
-
/'
10
100
iF, INSTANTANEOUS FORWARD CURRENT ImA)
Figure 8. MLED930 Forward Characteristics
7-41
1k
MRD5009
::J_,J~E~m
OUTPUT
MLED930
MLED930
Figure 9. Test Circuit for Threshold Current
Measurements
".
MRD5009
Figure 10. Test Circuit for Output Voltage versus Load
Current Measurements
OUTPUT
Figure 11. Test Circuit for Supply Current versus
Supply Voltage Measurements
7-42
Section Eight
Slotted Optical
Switches/Interrupters
Transistor Output
H21A Series ................................ 8-2
H22A Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 8-2
MOC70 Series .............................. 8-10
Dual Channel Transistor Output
MOC70W Series ............................ 8-13
Darlington Output
H21 B Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 8-6
H22B Series . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 8-6
MOC71 Series .............................. 8-15
Logic Output
MOC75 Series .............................. 8-18
8-1
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
Slotted Optical Switches
Transistor Output
Each device consists of a gallium arsenide infrared emitting diode facing a silicon NPN
phototransistor in a molded plastic housing. A slot in the housing betwe.en the emitter and
the detector provides the means for mechanically interrupting the infrared beam. These
devices are widely used as position sensors in a variety of applications.
H21A1*
H21A2
H21A3
H22A1*
H22A2
H22A3
*Motorola Preferred Devices
Features:
• Single Unit for Easy PCB Mounting
• Non-Contact Electrical Switching
• Long-Life Liquid Phase Epi Emitter
• 1 mm Detector Aperture Width
Applications:
Shaft encoders, non-contact switches, position sensing, paper handlers, coin handlers, and
general purpose interruptive sensing.
SLOTTED
OPTICAL SWITCHES
TRANSISTOR· OUTPUT
MAXIMUM RATINGS
I
Rating
Symbol
Value
Unit
Volts
INPUT LED
Reverse Voltage
VR
6
Forward Current - Continuous
IF
60
mA
Input LED Power Dissipation @ TA = 25'C
Derate above 25'C
Po
150
2
mW
mWrC
VCEO
30
Volts
Output Current - Continuous
IC
100
mA
Output Transistor Power Dissipation @ TA = 25'C
Derate above 25'C
Po
150
2
mW
mWrC
OUTPUT TRANSISTOR
Collector-Emitter Voltage
H21Al, 2 AND 3
CASE 354A-03
STYLE 1
TOTAL DEVICE
Ambient Operating Temperature Range
TA
- 40'C to 100'C
'c
Tstg
- 4O'C to 100'C
'c
Lead Soldering Temperature (5 seconds maxi
-
260
'c
Total Device Power Dissipation @ TA = 25'C
Derate above 25'C
Po
300
4
mW
mwrc
Storage Temperature
8-2
H22Al, 2 AND 3
CASE 354-03
STYLE 1
H21A1,H21A2,H21A3,H22A1,H22A2,H22A3
ELECTRICAL CHARACTERISTICS (TA
I
=
25"C unless otherwise noted)
I
Symbol
Min
Typ
Max
Unit
Forward Voltage (IF
VF
0.9
1.34
1.7
Volts
Reverse Leakage (VR
IR
1
10
p.A
Capacitance (V
CJ
-
24
50
pF
ICEO
-
15
100
nA
30
45
-
Volts
V(BR)ECO
6
7.8
CCE
-
2.5
hFE
-
700
Characteristic
INPUT LED
= 60 rnA)
= 6 V)
= 0 V, f = 1 MHz)
OUTPUT TRANSISTOR
= 25 V)
Dark Current (VCE
Collector-Emitter Breakdown Voltage (lC
Emitter-Collector Breakdown Voltage (IE
= 1 rnA)
= 100 p.A)
V(BR)CEO
= 5 V, f = 1 MHz)
DC Current Gain (VCE = 5 V, IC = 2 rnA)
Capacitance (VCE
-
Volts
-
rnA
pF
-
COUPLED
Output Collector Current
(IF
=
5 rnA. VCE
H21Al, H22Al
= 5 V) Note 1
IC
H21A2, H22A2
H21A3, H22A3
Output Collector Current
(IF
= 20 rnA, VCE = 5 V)
H21Al, H22Al
IC
H21 A2, H22A2
Note 1
H21A3, H22A3
Output Collector Current
(IF
=
30 rnA, VCE
= 5 V)
H21Al, H22Al
IC
H21A2,H22A2
Note 1
H21A3, H22A3
0.15
0.3
0.3
0.6
0.6
1
1
2
2
4
4
7
1.9
3.8
3
6
5.5
10
rnA
rnA
Collector-Emitter Saturation Voltage
(lC = 1.8 rnA, IF = 30 rnA) Note 1
H21Al, H22Al
VCE(sat)
-
0.25
0.4
Volts
Collector-Emitter Saturation Voltage
H21 A2, H22A2
VCE(sat)
-
0.25
0.4
Volts
0.25
0.4
(lC
=
1.8 rnA, IF
Turn-On Time (IF
Turn-Off Time (IF
H21A3, H22A3
= 20 rnA) Note 1
= 30 rnA, VCC = 5 V, RL = 2.5 kil) Note 1
= 30 rnA, VCC = 5 V, RL = 2.5 kil) Note 1
ton
toft
20
-
p's
80
-
p.s
Notes: 1. No actuator in sensing gap.
2. Stray radiation can alter values of characteristics. Adequate light shielding should be provided.
TYPICAL CHARACTERISTICS
II IIII
1.8
I
-----PULSEONLY
PULSE OR DC
-
I
0.1
I
.I
=
i
[ I I=b!
LI I
//
TA
---r
=
-40"C
25"C
1 --ttiiOll"C
1
......
......
,/
/
NORMALIZEO TO
VALUE WITH
NO ACTUATOR
.....1--'
..... 1--'
I--'"
10
100
IF, LED FORWARD CURRENT (mA)
0.0001
1000
Figure 1. LED Forward Voltage versus
Forward Current
o
8
d, DISTANCE FROM ACTUATOR TO REFERENCE SURFACE
~
==
=
10
Figure 2. Output Current versus Actuator Position
8-3
H21A1,H21A2,H21A3,H22A1,H22A2,H22A3
5
10
~ ~
~
NDRMALIZED TO:
IF = lOmA
TA = 25°C
;;;
ffi
:Ii
13
1
!rl
0.5
~
~
~ 0.2
v.;
~ O. 1
~II'
10V
25°C
~
~ ~10
:.;::::;
30V
~~
~
~
6
~
5
10
20
IF, FDRWAROCURRENT (mA)
100
50
Figure 3. Output Current versus Input Current
5
VCE
TA
cc _
~
:::l
8
~
100 1==
~
~ 0.7
I-
~NORMALIZEDTO:
!Z
t¥.
~~~
0.1
o
20
40
60
TA, AMBIENT TEMPERATURE (OC)
""'" ~ r--
~
NDRMALIZED TO. TA
~
.............
= 15"<:-
r-.....
r-- r--...
f'-..
I-
;z
!l§
........
=>
cc
~ 0.7
~ 0.5
8
-
I-
= 30 SEC.
= 15°C
t
-TA
I
~ 0.2
o
91
!;? 0.1
-40 -20
0
10
40
60
TA, AMBIENT TEMPERATURE (OC)
80
100
Figure 5. Output Current versus Ambient Temperature
8
4
0
8
~
I-I--
~-
"
~1"
..........
15
10
15
30
35
IF,. FDRWARD CURRENT (mA)
NDRMALIZED TO.:
RL 2.5k!J.
Ion
2
0.1
0.2
0.5
1
1
V, VDLTAGE (VDLTS)
'"
45
50
loft
4
0
0.05
40
~
r
tc~
6
l-
I"'--...
10
~ 1M~Z
.....
2
10
I
.1.
+2,,_
Figure 6. Reduction in Output Current Due to LED
Heating versus Forward Current
f
TA = 15°C
.......
6
o
.............
'-'
-60
100
Figure 4. Dark Current versus Ambient Temperature
10
cc
so
10
20
0.1
100 200
50
TA = 25°C
Vee = 5V
IF 1=
500
1K 2K
5K 10K 20K 50K lOOK
RL, LDAD RESISTANCE (DHMS)
1301~1
5OOK1M
Figure 8. Switching Times versus Load Resistance
Rgure 7. Capacitances versus Voltage
8-4
H21A1,H21A2,H21A3,H22A1,H22A2,H22A3
TEST CIRCUIT
WAVEFORMS
l-
..JI
Vee = 5V
i
,
:
:
10%]l-----I-Z---90%--:-i-,------L
_1 ____
I:
I
ji t-tr
'on ---::-
Figure 9. Switching TImes
8-5
INPUT PULSE
,
I
t I
iI rtf
-->!
i :- 'off
OUTPUTPULSf
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
Slotted Optical Switches
Darlington Output
These devices each consist of a gallium arsenide infrared emitting diode facing a silicon
NPN photodarlington in a molded plastic housing. A slot in the housing between the emitter
and the detector provides the means for mechanically interrupting the infrared beam. These
devices are widely used as position sensors in a variety of applications.
Features:
• Single Unit for Easy PCB Mounting
• Non-Contact Electrical Switching
• Long-Life Liquid Phase Epi Emitter
• 1 mm Detector Aperture Width
H21B1*
H21B2
H21B3
H22B1*
H22B2
H22B3
*Motorola Preferred Davlces
Applications:
Shaft encoders, non-contact switches, position sensing, paper handlers, coin handlers, and
general purpose interruptive sensing.
SLOTTED
OPTICAL SWITCHES
DARLINGTON OUTPUT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Volts
INPUT LED
Reverse Voltage
VR
6
Forward Current - Continuous
IF
60
rnA
Input LED Power Dissipation @ TA = 25°C
Derate above 25°C
Po
150
2
mW
mWrC
VCEO
30
Volts
IC
100
rnA
Po
150
2
mW
OUTPUT DARLINGTON
Collector-Emitter Voltage
Output Current -
Continuous
Output Darlington Power Dissipation @ TA
Derate above 25°C
=
25°C
mWrC
TOTAL DEVICE
Ambient Operating Temperature Range
Storage Temperature
Lead Soldering Temperature (5 seconds max)
Total Device Power Dissipation @ TA
Derate above 25°C
= 25°C
TA
-40°C to 100°C
°C
Tst9
-40°C to 100°C
°c
-
260
°c
Po
300
4
mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I
Characteristic
I Symbol I Min
Typ
H21B1, 2 AND 3
CASE 354A-03
STYLE 1
mWrC
I Max I Unit
INPUT LED
Forward Voltage (IF = 60 rnA)
VF
0.9
1.34
1.7
Volts
Reverse Leakage (VR = 6 V)
IR
-
1
10
p.(>.
Capacitance (V = 0 V, f = 1 MHz)
CJ
-
24
50
pF
(continued)
8-6
H22B1, 2 AND 3
CASE 354-03
STYLE 1
H2181,H2182,H2183,H2281,H2282,H2283
ELECTRICAL CHARACTERISTICS -
I
continued (TA = 25°C unless otherwise noted)
I
Characteristic
Symbol
I
Min
Typ
Max
100
Unit
OUTPUT DARLINGTON
Collector-Emitter Breakdown Voltage (lc
Emitter-Collector Breakdown Voltage (IE
Capacitance (VCE
ICEO
-
10
V(BR)CEO
30
90
V(BR)ECO
7
-
CCE
-
4
-
hFE
-
10,000
-
-
IC
0.5
1
-
mA
1
2
-
= 25 V)
Dark Current (VCE
=
5 V, f
=
DC Current Gain (VCE
=
= 1 mAl
= 100!IA)
1 MHz)
10 V, IC
=
2 mAl
nA
Volts
Volts
pF
COUPLED INote 1)
Output Collector Current
(IF
= 2 mA, VCE =
H21Bl, H22Bl
H21 B2, H22B2
1.5V)
H21 B3, H22B3
Output Collector Current
(IF
=
5 mA, VCE
=
H21 Bl, H22Bl
IC
H21B2,H22B2
1.5 V)
H21B3,H22B3
Output Collector Current
(IF
=
10 mA, VCE
=
H21Bl, H22Bl
IC
H21B2,H22B2
1.5 V)
H21 B3, H22B3
Collector-Emitter Saturation Voltage
(lC = 1.8 mA,lF = 10 mAl
VCE(sat)
Collector-Emitter Saturation Voltage
H21 B2, H22B2
3.8
5
-
5
10
-
rnA
10
18
7.5
15
14
28
-
25
40
-
-
-
1
Volts
Volts
mA
-
-
1.5
-
-
1.5
ton
-
120
-
!,S
toft
-
500
-
!,S
VCE(sat)
H21 B3, H22B3
= 50 mA, IF = 60 mAl
Turn-On TIme (IF = 10 rnA, VCC = 5 V, RL = 5100)
Turn-Oft Time (IF = 10 mA. VCC = 5 V, RL = 5100)
2
2.5
(lC
Notes: 1. Stray radiation can alter values of characteristics. Adequate light shielding should be provided.
2. No actuator in sensing gap.
TYPICAL CHARACTERISTICS
II III
1.8 f--
I
-----PUlSE bN(Y
PULSE OR OC
0.1
I I
/V"
=
i
[T ±=I:~~
III
TA = -40°C
r-
25°C
1 Hi100°C
1
r-
V
....... 1--'
~
~I
/
/
NORMALIZED TO
VALUE WITH
NO ACTUATOR
I-- Vf-'
I-10
100
IF, lED FORWARD CURRENT (mAl
0.0001
1000
o
~
==
=
2
4
6
8
10
d, DISTANCE FROM ACTUATOR TO REFERENCE SURFACE Imml
Figure 2. Output Current versus Actuator Position
Figure 1. LED Forward Voltage versus
Forward Current
8-7
H21B1,H21B2,H21B3,H22B1,H22B2,H22B3
Bl
B2~m
-
-
NORMAliZED TO:
IF = 10 rnA
~
NORMALIZED TO:
VCE = 10\1
TA = 25°C
=
=
l~B3
~V
-
v
./
/
./
./
./
5
r - r-VCE = 30V7 ~10y,.....
v.;
/.
/
A
/
1
50
5
10
20
IF. FORWARD LED CURRENT (rnA)
o
100
~
10
60
Figure 4. Collector-Emitter Dark Current versus
Ambient Temperature
100
7
5
""'" f'::' r--
99
~
NORMALIZED TO TA = 25°C-
...........
98
"'"""
G697
1
r-.....
-.... r-....-I-............
..............
.........
5~
~ ~ 96
1
~ ~
~
t = 30 SEC.
0
20
~
50
50
~""2"
94
'"
93
92
-20
I-
.........
.............
95
o~
~~
.t
+1,,_
...........
6~
z-
-~
100
80
TA. AMBIENT TEMPERATURE lOCI
Figure 3. Output Current versus Input Current
-50
0- -
IF
./
.A'
V
1
o
100
10
TA. AMBIENT TEMPERATURE lOCI
Figure 5. Output Current versus Ambient Temperature
15
20
15
30
35
IF. FORWARD CURRENT (rnA)
40
45
50
Figure 6. Reduction in Output Current Due to LED
Heating versus Forward Current
10
8
r-.
6
1 MHz
5
-
-
.....
~12
~
=
CLEO
14
~
f
NORMALIZED TO:
RL = 510n
toff
I
./
......
ton
10
~
"
P'
u
VCC = 5 V
IF = lOrnA
~E
o
0.05
0.1
0.2
0.5
1
V. VOLTAGE (VOLTS)
10
20
0.1
100
50
I
100
500
lK
2K
RL. LOAD RESISTANCE (OHMS)
5K
10K
Figure 8. Switching Times versus Load Resistance
Figure 7. Capacitances versus Voltage
8-8
H2181,H2182,H2183,H2281,H2282,H2283
TEST CIRCUIT
WAVEFORMS
Vee = 5V
IF = lOrnA
!-
-.JI
--'
r--------,
I ! ---+:
INPUT:
! --+!
I
I
:
I ,
1. ____ J
I
~.------------
I
I
:
I
I
:!
]
INPUT PULSE
I
I
l~~-----I-li---90%--:-1______ L_1 ____ OUTPUT PULSE
•
!
'
~
------
I I
--:
ton.JI
Figure 9. Switching Times
8-9
~ tr
~
I
I
I
I
---t1:'-- tf
-...::
I.-Ioff
'I
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MOC70
Series
Slotted Optical Switches
*M0C70Tl and M0C70Ul
Transistor Output
are Motorola Preferred Devices
These devices each consist of a gallium arsenide infrared emitting diode facing a silicon
NPN phototransistor in a molded plastic housing. A slot in the housing between the emitter
and the detector provides the means for mechanically interrupting the infrared beam. These
devices are widely used as position sensors in a variety of applications.
SLOTTED
OPTICAL SWITCHES
TRANSISTOR OUTPUT
Features:
• Single Unit for Easy PCB Mounting
• Non-Contact Electrical Switching
• Long-Life Liquid Phase Epi Emitter
• Several Convenient Package Styles
Applications:
Shaft encoders, non-contact switches, position sensing, paper handlers, coin handlers, and
general purpose interruptive sensing.
CASE 354A-03
STYLE 1
MAXIMUM RATINGS
I
Symbol
Rating
Value
Unit
Volts
INPUT LED
Reverse Voltage
VR
6
Forward Current - Continuous
IF
60
mA
Input Transistor Power Dissipation @ TA = 25·C
Derate above 25·C
Po
150
2
mW
mwrc
U
CASE 354-03
STYLE 1
OUTPUT TRANSISTOR
Collector-Emitter Voltage
VCEO
30
Output Current - Continuous
IC
100
Volts
mA
Output Transistor Power Dissipation @ TA = 25·C
Derate above 25·C
Po
150
2
mW
mwrc
TOTAL DEVICE
TA
-40 to +100
·C
Tstg
-40 to +100
·C
Lead Soldering Temperature (5 seconds max)
-
260
·C
Total Device Power Dissipation @ TA = 25·C
Derate above 25·C
Po
300
4
mwrc
Ambient Operating Temperature Range
Storage Temperature
mW
V
CASE 354G-02
STYLE 1
SWITCHING TIMES
Vee
IF
INPUT
= lOrnA
=
PART NUMBER
DERIVATION
INPUT
PULSE
SV
RL
= 2.Skll
{fi
4-J1= r--~ }
OUTPUT
M0C70H1
OUTPUT
PULSE
Siotte~~sw~
out~
L_J
:
IL _______
'----'H-o.
.J
TEST CIRCUIT
WAVEFORMS
8-10
TranSistor
Package Style
Electrical Selection
MOC70 Series
ELECTRICAL CHARACTERISnCS
I
(TA = 25°C unless otherwise noted. Note 1.)
I
Characteristic
Max
Unit
1.3
1.8
Volts
1
100
/loA
18
-
pF
100
Symbol
Min
Typ
Forward Voltage (IF = 50 mAl
VF
0.9
Reverse Leakage (VR = 6 V)
IR
Capacitance (V = 0 V, f = 1 MHz)
CJ
-
INPUT LED
OUTPUT TRANSISTOR
ICEO
-
5
Collector-Emitter Breakdown Voltage (lC = 10 mAl
V(BR)CEO
30
45
Emitter-Collector Breakdown Voltage (IE = 100 jIoA)
V(BR)ECO
Dark Current (VCE = 10 V)
DC Current Gain (VCE = 10 V, IC = 2 mAl
5
7
-
hFE
-
700
nA
Volts
Volts
-
COUPLED (Note 2)
Output Collector Current
(IF = 5 mA, VCE
MOC70_1
= 10V)
IC
MOC70_2
MOC70_3
Output Collector Current
MOC70_1
(IF = 20 mA, VCE = 10 V)
IC
MOC70--2
MOC70_3
MOC70_1
Output Collector Current
(IF = 30 mA. VCE = 10V)
IC
MOC70--2
MOC70_3
MOC70_1
VCE(sat)
Collector-Emitter Saturation Voltage
MOC70_2
VCE(sat)
= 1.8 mA, IF
MOC70_3
= 20 mAl
= 5 V, RL
0.3
0.3
0.6
0.6
1
1
2
2
4
4
7
1.9
3.8
3
6
mA
mA
-
10
-
0.25
0.4
Volts
-
0.25
0.4
Volts
-
0.25
0.4
= 2.5 kO)
ton
-
20
Turn-Off Time (IF = 30 rnA, VeE = 5 V, RL = 2.5 kG)
toft
-
80
Turn-On Time (IF = 30 mA, VCE
-
-
5.5
Collector-Emitter Saturation Voltage
(lC = 1.8 mA,lF = 30 mAl
(lc
0.15
mA
-
/los
/loS
Notes: 1. Stray radiation can alter values of characteristics. Adequate light shielding should be provided.
2. No actuator in sensing gap.
TYPICAL CHARACTERISTICS
1
1/,
~~~I~t~E
f-fONLyl-+++++I++---+-¥--IH'++++I
l
1.8 f - f - - - PULSE OR DC -+++++!+I---H'+!'It+++IfH
I
~
III
,,'
LJ
"/LI
/
s
~
...
~
I
~
~_d
NORMALIZED TO
VALUE WITH
NO ACTUATOR
:J
...
U
~
-0
0.001
9
1~'10
100
IF, LED FORWARD CURRENT (mA)
0.0 1
0:
:J
0
1~-
o. 1
::E
0:
0
0.0001
1000
Figure 1. LED Forward Voltage versus
Forward Current
o
6
8
d, DISTANCE FROM ACTUATOR TO REFERENCE SURFACE
Figure 2. Output Current versus Actuator Position
8-11
10
MOC70 Series
I:
-
I
!!!i
~
05
~
02
==
1000
10
1
NORMALIZED TO:
IF = 20 rnA
, .,
2
---
NORMALIZED TO: VCE
TA
~3
0
0.7
=VCE
30V
~I"
5
0.===
1
10
20
100
50
20
~
60
TA, AMBIENT TEMPERATURE (OC)
IF, FORWARD CURRENT (rnA)
Figure 3. Output Current versus Input Current
I
!;;
100
5
NORMALIZED TO TA
...........
iii
a: _ 98
a:
"
z
~
97
96
Z-..
10
15
20
25
30
IF, FORWARD CURRENT (rnA)
35
I
I
~
."
45
50
Figure 6. Reduction in Output Current Due to LED
Heating versus Forward Current
10
f = 1 MHz
r......-'
t = 30 SEC.
::>~ 94
c
~
93
~
-
+2u -
-z
-80
100
J
...... .......... ......
::>::>
uo
ot:!'
~
f:::::: -......
99
....
25°C- r---
2
.,YO.1
80
Figure 4. Dark Current versus Ambient Temperature
10
~
IF
1
~ O. 1
1
~
10 V
~
.5.?
!~
10V
25°C
NORMALIZED TO:
RL 2.5kO
toll
...........
r-
10
CcE
c.S
ton
I
o
0.05
0.1
0.2
0.5
1
2
V, VOLTAGE (VOLTS)
10
20
0.1
100 200
50
Figure 7. Capacitances versus Voltage
Vee = 5V
IF,= ,30,~
500
lK 2K
5K 10K 20K 50K lOOK
RL, LOAD RESISTANCE (OHMS)
5OOK1M
Figure 8. Switching TImes versus Load Resistance
8-12
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MOC70W1*
MOC70W2
Slotted Optical Switches
Transistor Output
*Motorola Preferred Device
These devices consist of two gallium arsenide infrared emitting diodes facing two NPN
silicon phototransistors across a 0.100" wide slot in the housing. Switching takes place when
an opaque object in the slot interrupts the infrared beam.
In addition to their use in position and motion indicators, dual channel interrupters enable
the sensing of direction of motion.
DUAL CHANNEL
SLOTTED
OPTICAL SWITCHES
TRANSISTOR OUTPUT
Features:
• 0.020" Aperture Width
• Easy PCB Mounting
• Cost Effective
• Uses Long-Lived LPE IRED
Application:
Quadrature sensing, shaft encoders, non-contact switching, multi-level position sensing,
coin handlers, and special purpose interruptive sensing.
ABSOLUTE MAXIMUM RATINGS (25°C)
Rating
Symbol
Value
Unit
INPUT LED
Power Dissipation
PD
150'
mW
Forward Current (Continuous)
IF
60
rnA
Reverse Voltage
VR
6
V
OUTPUT TRANSISTOR
Power Dissipation
Collector-Emitter Voltage
DETECTOR:
EMlmR
COLLECTOR
EMlmR
COLLECTOR
TOTAL DEVICE
Storage Temperature
Tstg
-40 to +85
°C
Operating Temperature
TJ
-40 to +85
°C
Lead Soldering Temperature
TL
260
°C
(5 seconds maximum)
*Derate 2
CASE 792-01
STYLE 2
mwrc above 25"C ambient.
INDIVIDUAL ELECTRICAL CHARACTERISTICS (25°C) (See Note 1)
I
Characteristic
Symbol
Reverse Breakdown Voltage (lR = 100 p.A)
V(BR)R
Min
Typ
Max
Unit
INPUT LED
-
-
Forward Voltage (IF = 50 rnA)
VF
-
1.3
1.8
V
Reverse Current (VR = 6 V, RL = 1 Mil)
IR
-
50
-
nA
Capacitance (V = 0 V, f = 1 MHz)
C
-
25
50
pF
OUTPUT TRANSISTOR
Breakdown Voltage (lc
=
10 rnA, H = 0)
Collector Dark Current (VCE = 10 V, H = 0, Note 1)
NOTE 1: Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
8-13
6
V
MOC70W1, MOC70W2
COUPLED ELECTRICAL CHARACTERISTICS (25'C, See Note 1t
M0C70W1
Symbol
Min
'CE(on)
VCE(sat)
VCE(sat)
Icx
100
Characteristics
IF = 20 rnA. VCE = 10 V
IF = 20rnA,IC = 50pA
'F = 20 rnA, IC = 125 pA
'F (opposite LED) = 20 rnA, VCE
=
10 V
-
MOC70W2
Typ
Max
-
0.4
-
-
Min
250
-
-
20
Typ
Max
-
-
Unit
pA
V
V
pA
-
0.4
-
20
NOTE 1: Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
10
ii
E
~
-
PULSE ONLY i
PULSE OR DC I
NORMALIZED TO RL
0:
0
g
!z
,/
1
lI!
0:
:::>
u
NORMALIZED TO:
IF 20mA
VCE 5V
PW 100 p.o, PRR
I-
:::>
I!: O. 1
:::>
0
~
II
/'
1
100 pps
/:
0.6
/
0.5
0.01
1
10
20
50 100
200
IF, IRED INPUT CURRENT
500
1000
Figure 1. Typical Output Current versus Input Current
o
0
d
-0
r--
f-
I
10 k
Figure 2. Typical ton' toft versus Load Resistanca
®
ORMALIZED
TO VALUE WITH
SHIELD REMOVED
~CK
B
SHIEL~
[
o
i"
lL
I
:=®
0.0001
./ """''0
~ V-
2.5k
5k
RL, LOAD RESISTANCE (OHMS)
lk
®BLACK
~
V
V
Dace
V
0.8
L
= 2.5 kO
C---IF = ~A
'-RL
,--VCC = 5V
PW = 300 p.s, PRR = 100 pps
'J 0
2
4
6
8
d, DISTANCE OF APERTURE SHIELD FROM REFERENCE (mm)
Figure 3. Typical Output Current versus Position of
Shield Covering Aperture
8-14
10
MOTOROLA
-
SEMICONDUCTOR - - - - - - - - - -_ __
TECHNICAL DATA
MOC71
Series
Slotted Optical Switches
Darlington Output
"MOC71Tl and MOC71Ul
are Motorola Preferred Devices
Each device consists of a gallium arsenide infrared emitting diode facing a silicon NPN
photodarlington in a molded plastic housing. A slot in the housing between the emitter
and the detector provides the means for mechanically interrupting the infrared beam.
These devices are widely used as position sensors in a variety of applications.
•
•
•
•
SLOTTED
OPTICAL SWITCHES
DARLINGTON OUTPUT
Single Unit for Easy PCB Mounting
Non-Contact Electrical Switching
Long-Life Liquid Phase Epi Emitter
Several Convenient Package Styles
T
MAXIMUM RATINGS
CASE 354A-03
Rating
STYLE'
.a
p
Value
Unit
VR
6
Volts
IF
60
mA
P
Po
150
2
mW
mwrc
CASE 354J-Ol
STYLE 1
VCEO
30
Volts
U
IC
100
mA
CASE 354-03
STYLE 1
Po
150
2
mW
mW/oC
Symbol
INPUT LED
Reverse Voltage
Forward Current -
Continuous
Input LED Power Dissipation (a" TA
Derate above 25°C
= 25°C
OUTPUT DARLINGTON
Coliector·Emitter Voltage
Output Current - Continuous
«t TA
Output Darlington Power Dissipation
Derate above 25°C
= 25°C
TOTAL DEVICE
Ambient Operating Temperature Range
Storage Temperature
Lead Soldering Temperature (5 seconds max)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
TA
-40 to +100
°c
Tstg
-40 to +100
°c
-
260
°c
Po
300
4
mW
mwrc
V
CASE 354G-02
STYLE 1
SWITCHING TIMES
Vee
=
5V
IF = IOmA
INP:Du:-l:::,
----~
I'
L_J
I
I
INPUT
PULSE
RL
= 510n
~
L
Slotte1;k§~~~H
out~
OUTPUT
PULSE
OUTPUT
1
I ________ _
L
TEST CIRCUIT
PART NUMBER
DERIVATION
WAVEFORMS
8-15
Darlington
Package Style
Electrical Selection
MOC71 Series
ELECTRICAL CHARACTERISTICS (TA
2~ unl_ otherwise noted. Note 1.)
a
Characteristic
Symbol
Min
Forward Voltage (IF = 50 mAl
VF
0.9
Reverse Leakage (VR = 6 V)
IR
Capacitance (V = 0 V, f = 1 MHz)
CJ
-
Typ
Unit
INPUT LED
1.3
1.8
Volts
0.05
100
pA.
24
50
pF
OUTPUT DARUNGTON
Dark Current (VCE
Capacitance (V
ICEO
-
10
100
V(BR)CEO
30
90
CCE
-
5.5
-
hFE
-
10,000
-
-
2.5
5
mA
8
14
= 10 V)
Collector-Emitter Breakdown Voltage (lC
= 0 V, f =
DC Current Gain (VCE
=
1 mAl
1 MHz)
= 10 V, IC = 2 mAl
nA
Volts
pF
COUPLED (Nota 2)
Output Collector Current
(IF
= 5 mA. VCE =
MOC71_1
5 V)
IC
MOC7L_3
MOC71_1
Output Collector Current
IC
MOC71_3
(IF = 10 mA, VCE = 5 V)
Collector-Emitter Saturation Voltage
(lC = 1.8 mA. IF = 10 mAl
Turn-On Time (IF
=
10 mA, VCC
=
VCE(sat)
5 V, RL = 5100)
ton
Turn-Off TIme (IF = 10 mA. VCC = 5 V, RL = 5100)
toff
7.5
15
-
20
35
-
-
-
1
Volts
-
120
-
p.s
500
-
p.S
mA
Notes: 1. Stray radiation can alter values of characteristics. Adequate light shielding should be provided.
2. No actuator in sensing gap.
TYPICAL CHARACTERISTICS
1
II ,
C
~
I
/
:;
a::
,/
o.1
0
I
;;;
I-
I
Z
!I!
a::
/"
"
0,0 1
:::>
u
I-
:::>
!5
0
0.001
.9
ll--M l~V
10
100
IF, LED FORWARD CURRENT (mA)
=
.t.
CI!Eldo~
NORMALIZED TO ' ~
VALUE WITH
NO ACTUATOR
~
~
0.0001
1000
d, DISTANCE FROM ACTUATOR TO REFERENCE SURFACE (mm)
Figure 1. LED Forward Voltage versus
Forward Currant
Figure 2. Output Current versus Actuator Position
8-16
MOC71 Series
I
~
i3
5
0
7
5
r----
1
2
-3
NORMALIZED TO:
IF = lOrnA
r-2
1M
g§
§~:
NORMALIZED TO: VCE
TA
~V
/'
./
r-- t---VCE = 30 V
-
./
,/
'--;-0 V
/.
o.2
u o. 1
/
.A'"
/
V
1
1
5
10
20
IF, FORWARD LED CURRENT ImAI
100
NORMALIZED TO TA
= 25'C-
!Z
~
::::>
::::::::-
9
>-
i!'O
@
00
TA, AMBIENT TEMPERATURE ('CI
il5
g§ u; 98
::::>::::>
uo
>-w 7
--
..........
r--...
5~
1
zu)
t; 0.7
~ 0.5
96
zz
-
5
;:::0
g~
94
o~
8
~
~
@
WOW@M
00
t
+2<7_
~
o
15
20
25
30
35
IF, FORWARD CURRENT (mAl
TA, AMBIENT TEMPERATURE I'CI
~-
"'- "iI"'"
= 30 SEC.
10
l-
..........
........
3
92
~
r-.. ........
i'-.
.......
::::>z
00
100
J
~~
0.2
o
£:l O. 1
00
Figure 4. Collector-Emitter Dark Current versus
Ambient Temperature
10
!5
0- -
IF
....,.. . /
W
100
50
Figure 3. Output Current versus Input Current
~
./
".
".
~
I
25'C
l..'
1
7
5
8
-
= 10 V
45
@
50
Figure 6. Reduction in Output Current Due to LED
Heating versus Forward Current
Figure 5. Output Current versus Ambient Temperature
0
r--
5
f = 1 MHz
CLEO
.........
toff
I--NORMALIZED TO:
I- RL = 510 n
2
....
1
./
ton
5
CCE
.b"
2
o
0.05
0.1
0.2
0.51251020
V, VOLTAGE IVOLTSI
50
Figure 7. Capacitances versus Voltage
2
VCC = 5 V
IF = lOrnA
O. 1
100
I I III
200
500
lK
2K
RL, LOAD RESISTANCE (OHMSI
5K
10K
Figure 8. Switching TImes versus Load Resistance
8-17
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MOC75
Slotted Optical Switches
Series
Logic Output
*MOC75T1 and M0C75Ul
are Motorola Preferred Devices
These devices consist of a GaAs LED facing a silicon, high-speed integrated circuit
detector in a molded plastic housing. A slot in the housing between the emitter and the
detector provides a means of mechanically interrupting the signal and switching the output
from an on-state to an off-state. The detector incorporates a schmitt trigger which provides
hysteresis for noise immunity and pulse shaping. The detector circuit is optimized for
simplicity of operation and has an open-collector output for application flexibility.
SLOTTED
OPTICAL SWITCHES
LOGIC OUTPUT
Features:
• Single Unit for Easy PCB Mounting
• Non-Contact Logic Level Switching
• Long-Life Liquid Phase EPI Emitter
• 1 mm Detector Aperture Width
• Suitable for use in 3 V Applications
Applications:
Shaft encoders, non-contact switches, position sensing, paper handlers, coin handlers, and
interruptive sensor application requiring logic level outputs.
T
CASE 354C-03
STYLE 1
ABSOLUTE MAXIMUM RATINGS: (TA
I
=
25'C unless otherwise noted)
Reting
I Symbol I
Value
Unit
INPUT LED
Power Dissipation
Po
100
mW
Forward Current (Continuous)
IF
60
mA
Forward Current (Peak)
(Pulse Width", 1 p.s, PRR < 300 PPS)
IF
1.5
A
Reverse Voltage
VR
6
V
Output Voltage Range
Vo
0-16
V
Supply Voltage Range
VCC
3-16
V
Output Current
10
50
mA
Power Dissipation
Po
150'
mW
Tstg
- 40'C to 100'C
'c
Operating Temperature
TJ
- 40'C to 100'C
'C
Lead Soldering Temperature (5 seconds maximum)
lL
260
'c
U
CASE 3548-02
STYLE 1
OUTPUT DETECTOR
P
TOTAL DEVICE
Storage Temperature
*Oerate 2 mWrc above 26°C ambient.
8-18
CASE 354K-Ol
STYLE 1
MOC75 Series
INDIVIDUAL ELECTRICAL CHARACTERISTICS (0-70"C) (See Note 1)
I
I
Characteristic
Symbol
Min
Typ
Max
VF
-
1.1
1.6
V
IR
-
10
pA
Unit
INPUT LED
Forward Voltage (IF
Reverse Current (VR
= 20 mAl
= 3 V)
Reverse Breakdown Voltage (IR
Capacitance (V
= 0 V, f =
=
100 pA)
V(BR)R
6
-
-
V
C
-
24
50
pF
1 MHz)
OUTPUT DETECTOR
3
-
15
V
ICC(off)
-
1.3
5
mA
IOH
-
-
100
pA
Operating Voltage
VCC
= 0, VCC = 5 V)
Output Current, High (IF = 0, VCC = Vo =
Supply Current (IF
15 V)
COUPLED (0-70·C) (See Note 1)
Threshold Current, ON
(RL = 270 n, VCC = 5 V)
MOC75(T,U,P)1
MOC75(T,U,P)2
IF(on)
-
20
10
30
15
mA
Threshold Current, OFF
(RL = 270 n, VCC = 5 V)
MOC75(T,U,P)1
MOC75(T,U,P)2
IF(off)
0.5
0.5
15
8
-
mA
!B2f!l
-
0.75
-
mA
= 270 n, VCC = 5 V)
Hysteresis Ratio (RL
IF(on)
Supply Current (IF
=
=
IF(on), VCC
Output Voltage, Low (IF
=
5 V)
IF(on) VCC
Turn-On Time
Turn-Off Time
Rise TIme
:;; 1.2
~1
g§ 0.8
a 0.6
9
o
:>::
ffi 0.4
~
."..0.2
o
o
/'
.,--
TJRN.OFF
J
ton
tf
NORMA~IZED
tr
I
~
1.2
-
V
,..
-
0.1
-
1.2
0.1
1.04
,/"
~
t5 1.02
;'
./
~
!z
::!
a:
1
1
V
130.98
9
o
iii 0.96
V
./
/
NORMALIZED TO i-Vec = 5V
I-TA = 25·C
i--
::!
:>::
~O.94
I
6
8
10
12
vcc, SUPPLY VOLTAGE (VOLTS)
5
0.4
1.06
o
IFI
TO I
IF(on) AT VCC = 5 V
TA = 25·C
T
3
0.2
-
toff
~HRESHO~D
J
-
VOL
JHRESHOtD
t5
~
= 270 n)
I I I
T~RN.ON
1.4
-
ICC(on)
RL
RL = 270 n,
VCC = 5V,
IF = IF(on)
TA = 25·C
Fall Time
!
= 5 V,
14
16
0.92
-40
-20
20
40
TA, TEMPERATURE (OC)
60
80
Figure 2. Threshold Current YenlU. Temperature
Figure 1. Normalized Threshold Current venlu.
Supply Voltage
8-19
100
MOC75 Series
0.50
0.45
i>
o
0.35
~
K ./'
./' V
0.20
V
0.15
~ 0.10
~0.05
0.00
/
.&:. ~
o
~ :::.-
10
TJ
/
~
TJ = -40'e..-
/'
V
=
1
20
25
30
35
10. LOAD CURRENT (mAl
40
45
50
10
I
I
V
......--
Vo
V
---
--
~
= 25'C
1--1
Vi--+--""
J..-
TJ
= 85'e
I
I
I
I
~
-l---
r--
3
TJ - 85'e
=
- -- -
~
f--
I
6
9
12
Vee. SUPPLY VOLTAGE IVOLTSI
Figure 4. Supply Current versus Supply Voltage Output High
............
VI
TJ
........-r
f-"'""'
f.--
f.--
-J,c
i j;.-/
=
T'
V
I---" r-
o
15
Figure 3. Output Voltage versus Load Current
/
--
V
-40'C
........-
. /...... V
:::>
/
iJ = 8J
~
'/' . /
= 25'C
TJ
i ~::
~
v
r
~ 0.40
~
I-- I--
12
3
15
Vee. SUPPLY VOLTAGE (VOLTSI
Figure 5. Supply Current versus Supply Voltage Output Low
P
Figura 6. Test Circuit for Threshold Currant
Measurements
cc = 5 VOlTS
2
RL
\l.
4
OUTPUT
3
Figure 7. Test Circuit for Output Voltage versus Loed
Currant Measurements
Figura 8. Test Circuit for Supply Current versus
Supply Voltage Measurements
8-20
15
MOC75 Series
!
IF(On)~
---ICC
.-1
1
1
1
1
:
1
l1
I1
1
L
1
:
1
-----..,
,_
ton
1
1
1
I'
1
--,
1
1
1
I
I
.----:-:-1
I
I
1 1
_~
Figure 9. Switching Test Circuit
8-21
I
1
1
1
~tf
toft )4I
8-22
Section Nine
Fiber Optics
MFOD71 .................................... 9-2
MFOD72 .................................... 9-5
MFOD73 .................................... 9-8
MFOD75 .................................... 9-11
MFOD1100 .................................. 9-15
MFOD2404 .................................. 9-17
MFOD2405 .................................. 9-19
MFOE71 .................................... 9-21
MFOE76 .................................... 9-23
MFOE1100 Series ........... ................ 9-26
MFOE1200 .................................. 9-30
MFOE1201 Series ... ........................ 9-32
9-1
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MFOD71
Fiber Optics - FLCS Family
Photo Detector
Diode Output
FLCSFAMILV
FIBER OPTICS
PHOTO DETECTOR
DIODE OUTPUT
The MFOD71 is designed for low cost, short distance Fiber Optic Systems using 1000 micron
core plastic fiber.
Features:
• Fast PIN Photodiode: Response Time <5 ns
• Ideally Matched to MFOE76 Emitter for Plastic Fiber Systems
• Annular Passivated Structure for Stability and Reliability
• FLCS Package
- Includes Connector
- Simple Fiber Termination and Connection (Figure 4)
- Easy Board Mounting
- MOlded Lens for Efficient Coupling
- Mates with 1000 Micron Core Plastic Fiber (Eska SH4001)
Applications:
• Medical Electronics
• Industrial Controls
• Security Systems
MAXIMUM RATINGS
• Short Haul Communication Systems
• High Isolation Interconnects
• M6800 Microprocessor Systems
(TA = 2S'C unless otherwise notedl
Rating
Reverse Voltage
MFOD71
Total Power Dissipation @TA = 2S'C
Derate above 2S'C
Operating and Storage Junction Temperature Range
ELECTRICAL CHARACTERISTICS
Symbol
Value
Unit
VR
100
Volts
Po
150
2
mWrC
-40 to + 100
·C
TJ, Tstg
= 20 V, RL = 1 M{l) TA = 2S'C
Symbol
Min
Typ
Max
Unit
10
-
0.06
10
10
nA
SO
100
-
-
1.1
Volts
B
-
Ohms
3
-
pF
TA = 8S'C
Reverse Breakdown Voltage (lR
= 10 pAl
V(BR)R
Forward Voltage (IF = SO rnA)
Series Resistance (IF
VF
= 50 rnA)
Total Capacitance (VR = 20 V, f
mW
(TA = 2S"C unless otherwise notedl
Characteristic
Dark Current (VR
CASE 3638-01
PLASl1C
STYLE 3
Rs
= 1 MHz)
OPTICAL CHARACTERISTICS (TA =
CT
2S'C)
Responsivity (VR = S V, Figure 2)
Response Time (VR = S V, RL = 50 0)
9-2
-
Volts
MFOD71
TYPICAL COUPLED CHARACTERISTICS
100
/ "\
90
\
80
~
70
u
~
100
a:
ESKA SH4oo1
"-
0
t;
~
10
"
12
16
20
24
28
FIBER LENGTH IMETERS)
32
Figure 3. Detector Current versus Fiber length
Figure 2. Responsivity Test Configuration
The system length achieved with a MFOE76 emitter and
various detectors, using 1000 micron core plastic fiber
(Eska SH4001 or equivalent), depends on the LED forward
current (IF) and the responsivity of the detector chosen.
Each detector will perform with the MFOE76 up to the
distances shown below.
MF0071 PIN DIODE
MFOD72 TRANSISTOR
MFOD73 DARLINGTON
MFOD75 LOGIC
40
60
80
36
100
20
I, FIBER LENGTH (METERS)
140
Figure 4. MFOE76 Working Distances
9-6
160
220
MFOD72
...
TERMINATION INSTRUCTIONS
CROSS SECTION OF FLCS PACKAGE
1. Cut cable squarely with sharp blade or hot knife.
2. Strip jacket back with 18 gauge wire stripper to expose
CLADDING
0.10-0.18" of bare fiber core.
(JACKETI
Avoid nicking the fiber core.
~~:LL==~~~===~
CLADDING
3. Insert terminated fiber through locking nut and into
the connector until the core tip seats against the
molded lens inside the device package.
Screw connector locking nut down to a snug fit, locking
the fiber in place.
Figure 5. FO Cable Termination and Assembly
INPUT SIGNAL CONDITIONING
The following circuits are suggested to provide the desired forward current through the emitter.
+5V
MFOE76
+5V
~
RL
3.9k
TIL
o--'VIIV--j
IN
2N3904
IF
RL
10mA
50mA
100mA
300
56
TIL
IN
3.9 k
2N3904
27
NONINVERTING
MFOE76
~
INVERTING
Figure 6. TTL Transmitters
OUTPUT SIGNAL CONDITIONING
The following circuit is suggested to take the MFOD72 detector output and condition it to drive TTL with an acceptable
bit error rate.
+5V
Figure 7. 5 kHz Transistor Receiver
9-7
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MFOD73
Fiber Optics - FLCS Family
Photo Detector
Darlington Output
FLCS FAMILY
FIBER OPTICS
PHOTO DETECTOR
DARLINGTON OUTPUT
The MFOD73 is designed for low cost, short distance Fiber Optic Systems using 1000 micron
core plastic fiber.
Features:
• High Sensitivity Photodarlington Output
• Ideally Matched to MFOE76 Emitter for Plastic Fiber Systems
• Annular Passivated Structure for Stability and Reliability
• FLCS Package
-Includes Connector
- Simple Fiber Termination and Connection (Figure 4)
- Easy Board Mounting
- Molded Lens for Efficient Coupling
- Mates with 1000 Micron Core Plastic Fiber (Eska SH4001)
Applications:
• Medical Electronics
• Industrial Controls
• Security Systems
• Short Haul Communication Systems
• High Isolation Interconnects
• M6800 Microprocessor Systems
CASE 3638-01
PLASTIC
STYLE 3
MAXIMUM RATINGS (TA = 25"C unless otherwise noted)
Rating
Collector-Emitter Voltage
Total Power Dissipation @ TA = 25"C
Derate above 25"C
Operating and Storage Junction Temperature Range
Symbol
Value
Unit
VCEO
60
Volts
Po
150
2
mW
mWrC
TJ, Tstg
-40 to +100
"C
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)
Characteristic
Collector Dark Current (VCE
Symbol
= 10 V)
10
Collector-Emitter Breakdown Voltage (lc
= 10 mAl
Min
-
V(BR)CEO
60
Typ
-
Max
Unit
100
nA
-
Volts
OPTICAL CHARACTERISTICS
Responsivity (VCC
=
5 V, Figure 2)
Saturation Voltage (A = 850 nm, VCC
(Pin = 1 p.W, IC = 2 mAl
Turn-On Time
Turn-Off Time
=
5 V)
I RL = 100 n, Pin = 1 p.W,
I A = 850 nm, VCC = 5 V
9-8
R
1,000
1,500
pA/p.W
-
-
VCE(sat)
0.75
1
Volts
ton
-
125
-
p.s
toff
-
150
-
p.s
MFOD73
TYPICAL COUPLED CHARACTERISTICS
100
BO
'"z
w
5"
III
~
;
/
70
60
40
\
/
30
10
\
\
\
/
50
20
"\
\
/
90
1\
/
200
"
r"-...
o
400
1000
600
BOO
A, WAVELENGTH Inml
1200
Figure 1, Relative Spectral Response
- -,
10,000
"
MFOE76
"
1 METER
"
"
u
~
W
~
~
D
~
FIBER LENGTH (METERSI
Figure 3. Detector Current versus Fiber Length
Figure 2. Responsivity Test Configuration
current (IF) and the responsivity of the detector chosen.
Each detector will perform with the MFOE76 up to the
distances shown below.
The system length achieved with a MFOE76 emitter and
various detectors, using 1000 micron core plastic fiber
(Eska SH4001 or equivalent), depends on the LED forward
'"
-5
;'.1:;;;':::,'
~
MFOD72;10;;'«8'"j;,J,/,·
~
MFOD73/llm;;;I://(~;/,· "";,/:,
;;0/ './;;1://
T~=85~ V~
V /'
0.4
V
V V
VL V V
L ~~
o ~ ~~
o
10
15
20
~
~
L
L
V
k:::::
TJ = -4O"e
? 0.05
0.75
1
INCIDENT RADIATION INORMALIZED)
25
30
35
40
45
50
10. LOAD CURRENT ImA)
Figure 2. Transfer Characteristics
0
I
~
I
T1=-~ .......-
8
YI
6
4/
2..,/'"
V
0
Figure 3. Output Voltage. Low versus Load Current
V
---
V
V
f--
TJ = 25'e
i--"f
~
~
TJ = -40'e_ V-
.-- ~
j..---"
[......--T
.-~
f.----
V
TJ = 85'e
I
I
J
I
-
V
1
I-----::" +-
o
12
15
i5'e
:.-r-:
...- -I--r-TJ =
3
-
r---
~
r--b:::::::: !--
TJ = 85'e
12
6
Vee. SUPPLY VOLTAGE IVOLTS)
Vee. SUPPLY VOLTAGE IVOLTS)
Figure 4. Supply Current versus Supply Voltage Output Low
Figure 5. Supply Current versus Supply Voltage Output High
9-12
15
MFOD15
TYPICAL CHARACTERISTICS
1.6
o
~
1.4
~ 1.2
o
Vcc
_ Hlonl
~,
/'.
,
~
~ 0.8
~
L
55 0.6
-
VOH
~
Hloltl
NORMALIZED TO
IFlon) AT VCC = 5 V TA = 25"C
~ 0.4
i!= 0.2
1
:r' 0
o
6
10
12
14
Vcc, SUPPLY VOLTAGE (VOLTSI
16
18
-20 0 +20 +40 +60 +80 +100
TA, AMBIENT TEMPERATURE ("CI
Figure 7. Output Voltage versus Ambient Temperature
100
---
1000
900
90
I
80
800
. / I,
70
!:Ii
;:::
VOL
0
-80 -60 -40
Figure 6. Threshold Irradiance versus Supply Voltage
~
= 5V
J-
~
, V
9o
V
L
60
~ 600
,/
50
40
-
30
~
~ 500
;::: 400
. /V
200
If
10
4
Ion
300
20
o
o
lolt_ I--
700
6
8
10
12
vcc, SUPPLY VOLTAGE (VOLTSI
100
14
o
o
16
4
6
8
10
14
12
16
vcc, SUPPLY VOLTAGE (VOLTSI
Figure 9. Total Switching Time versus Supply Voltage
Figure 8. Pulse Response Time versus Supply Voltage
Typical Coupled Characteristics Using MFOE71 and 1 Meter 1000 I'm Plastic Cable
0
1.06
I
0::
0
~
1.04
,/
1.02
v
5
,/
z>-
V
~
V
0::
:::>
u
0.98
~
:>::
0.96
ffi
0::
/"
V
NORMALIZED TO
Vce = 5V
TA = 25"C
:>::
>- 0.94
~
0.92
-40
.V
-
20
40
TA, TEMPERATURE I"CI
60
0
80
-- ~
5
I
-20
.......- ...-
25
100
50
75
IF, INPUT CURRENT (mAl
100
(*Temperature effects on plastic cable not included)
Figure 10. Threshold Current versus Temperature
Figure 11. Working Distance versus Input Current
9-13
125
MFOD75
Cross Section of FlCS Package
Termination Instructions
1. Cut cable squarely with sharp blade or hot knife.
2. Strip jacket back with 18 gauge wire stripperto
expose 0.10-0.18" of bare fiber core.
Avoid nicking the fiber core.
3. Insert terminated fiber through locking nut and into
the connector until the core tip seats against the
molded lens inside the device package.
Screw connector locking nut down to a snug fit,
locking the fiber in place.
Figure 12. FO Cable Termination and Assembly
9-14
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
Fiber Optics -
MFOD1100
High Performance Family
Photo Detector
Diode Output
HERMETIC FAMILY
FIBER OPTICS
PHOTO DETECTOR
DIODE OUTPUT
The MFOD1100 is designed for infrared radiation detection in high frequency Fiber Optics
Systems. It is packaged in Motorola's hermetic TO-206AC (TO-52) case, and it fits directly
into standard fiber optics connectors. The metal connectors provide excellent RFI immunity.
Features:
• Fast Response - 1 ns Max @ 5 Volts
• Analog Bandwidth (-3 dB) Greater Than 250 MHz
• Performance Matched to Motorola Fiber Optics Emitters
• TO-206AC (TO-52) Package - Small, Rugged, and Hermetic
• Compatible with AMP #228756-1, Amphenol #905-138-5001 and Radiall #F086600380
Receptacles Using Motorola Plastic Alignment Bushing MFOA06 (Included)
Applications:
• Medical Electronics
• Security Systems
• CATV
• Computer and Peripheral Equipment
MAXIMUM RATINGS (TA
•
•
•
•
Industrial Controls
M6800 Microprocessor Systems
Video Systems
Communication Systems
= 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
50
Volts
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Po
50
0.5
mW
mWrC
Operating Temperature Range
Storage Temperature Range
TA
-55 to +125
°C
Tstg
-65 to +150
°C
Symbol
Min
CASE 210A-Ol
METAL
STYLE 1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Dark Current
(VR = 5 V. RL
10
= 1 M. H =
Typ
Max
Unit
-
-
1
nA
50
-
-
Volts
O. Figure 2)
Reverse Breakdown Voltage
(lR = 10p.A)
V(8R)R
Forward Voltage
(IF = 50 mAl
VF
-
2
2.5
Volts
Total Capacitance
(VR = 5 V. f = 1 MHz)
CT
-
-
2.5
pF
Noise Equivalent Power
NEP
-
50
-
fW/VHZ
0.3
0.35
-
p.A/p.W
OPTICAL CHARACTERISTICS (TA = 25°C)
Responsivity @ 850 nm
(VR = 5 V. P = 10 p.W. Figure 3.5)
R
tr.tf
-
1.2
3
ns
Effective Input Port Diameter (Figure 4)
-
-
300
0.012
-
Microns
Inches
10 dB (90%) Numerical Aperture of Input Port (Figure 4)
NA
-
0.4
-
-
Response Time @ 850 nm
(VR = 20 V)
9-15
MFOD1100
TYPICAL CHARACTERISTiCS
100
/
90
80
/
~ 70
~ 60
~
'"
~
!5~
'\
1\
\
/
50
40
~
,
1§'"
/
10
O. 1
\..
i'-..
,I
o
0.2
0.3
0.4
0.5
0.6
0.7
0.8
A, WAVELENGTH Il'ml
1.1
0.9
0.01
1.2
-~
Figure 1. Relative Spectral Response
IF
L.J OPTliFIBER'
-
'\
-~
-g
5
~
~
TA, TEMPERATURE 1"<:1
~
£:
RL
A
CONNECTOR
D.U.T.
$
~
Figure 2. Dark Current versus Temperature
VR
L.J
]
MFOEl200
1
E>
\.
~ 20
10
0::
::::>
u
1
/
30
...~
'::"
SERIES
Figure 4. Package Cross Section
Figure 3. Responsivity Test Configu.ation
9-16
rn
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
Fiber Optics -
MFOD2404
High Performance Family
Photo Detector
Preamplifier Output
The MFOD2404 is designed as a monolithic integrated circuit containing both detector and
preamplifier for use in medium bandwidth, medium distance systems. It is packaged in
Motorola's hermetic TO-206AC (TO-52) case, and fits directly into standard fiber optics connectors which also provide excellent RFI immunity. The output of the device is low impedance to provide even less sensitivity to stray interference. The MFOD2404 has a 300 I'm
(12 mil) optical spot with a high numerical aperture.
HERMETIC FAMILY
FIBER OPTICS
PHOTO DETECTOR
PREAMPLIFIER OUTPUT
Features:
• Usable for Data Systems Up to 10 Megabaud
• Dynamic Range Greater than 100: 1
• Compatible with AMP #228756-1, Amphenol #905-138-5001 Receptacles Using
Motorola Alignment Bushing MFOA06 (Included)
• Performance Matched to Motorola Fiber Optics Emitter
• TO-206AC (TO-52) Package - Small, Rugged and Hermetic
• 300 I'm (12 mil) Diameter Optical Spot
Applications:
• Medical Electronics
• Security Systems
• Computer and Peripheral Equipment
CASE 2100-01
METAL
STYLE 1
• Industrial Controls
• M6800 Microprocessor Systems
• Communication Systems
MAXIMUM RATINGS
Symbol
Value
Unit
Supply Voltage
VCC
7.5
Volts
Operating Temperature Range
TA
-55 to + 125
·C
Tstg
-65 to +150
·C
Rating
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (VCC
=
5 V. TA
= 25·C)
Symbol
Conditions
Min
Typ
Max
Power Supply Current
Characteristic
ICC
Circuit A
3
3.5
5
mA
Quiescent dc Output Voltage (Noninverting Output)
Vq
Circuit A
0.5
0.6
0.7
Volts
Quiescent dc Output Voltage (Inverting Output)
Vq
Circuit A
2.7
3
3.3
Volts
VNO
Circuit A
-
0.4
1
mV
R
Circuit B
20
23
30
35
50
58
mV/J.'W
0.1
-
-
-
35
50
ns
0.5
-
-
35
-
dB
-
30
J.'W
RMS Noise Output
Units
OPTICAL CHARACTERISTICS
Responsivity (VCC = 5 V, P = 2 J.'W)
(Note 1)
Sensitivity (10 Mbls NRZ, BER
=
A = 940 nm
A = 850 nm
10- 9)
S
Pulse Response
t r , tf
Numerical Aperture of Input Port (300 I'm [12 mill diameter spot)
NA
Signal-to-Noise Ratio @ Pin
=
1 J.'W peak (Note 2)
SIN
Maximum Input Power for Negligible Distortion
in Output Pulse (VCC = 5 V, Note 2)
Circuit B
J.'W
RECOMMENDED OPERATING CONDITIONS
Supply Voltage
VCC
4
Resistive Load (Either Output)
RL
200
Capacitive Load (Either Output)
CL
-
Input Wavelength
A
Notes. 1. As measured on either output {single-endedi.
2. Power launched into SMA type device receptacle.
9-17
5
6
Volts
-
-
Ohms
100
pF
850
-
nm
MFOD2404
-
- -
I
--
- -,
Vcc
1
j
I
i
c
I
I INVERTED
1 OUTPUT
~~
~ Z;
1.8
1.6
~l{: 1.4
~~1.2
1
+ t;
I NONINVERTED >~ 1
S- 1OUTPUT
O.
~_+-_-L.._.()
~i= o.
6
:--t" .
0.4
,
I
::§
I
,I
L _________ _
_ _ _ ' _ _ _ _ ~GNDlCASE
-
'",,'
..
Ir L.-
----
Ii Vq - _
--
V
I- ICC- p'- ~ ,..-r.i .......1==-::: -:::.- -
-i== r-
,-Ill
I
I
,
i
I
~ 10 MHz
• Spectral Response Matched to FLCS Detectors: MFOD71, 72, 73, 75
• FLCS Package
-LowCost
- Includes Connector
- Simple Fiber Termination and Connection
- Easy Board Mounting
- Molded Lens for Efficient Coupling
- Mates with 1000 Micron Core Plastic Fiber (Eska SH4001)
Applications:
• Medical Electronics
• Industrial Controls
• Security Systems
820nm
• Short Haul Communication Systems
• High Isolation Interconnects
• M6800 Microprocessor Systems
CASE 3638.01
PLASTIC
STYLE 1
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
VR
6
Volts
Forward Current - Continuous
- Peak Pulse
IF
60
1
mA
A
PD(l)
150
2
mW
mWrC
TJ, Tstg
-40 to +100
·C
-
260
·C
Rating
Total Power Dissipation @TA = 25·C
Derate above 25·C
Operating and Storage Junction Temperature Range
Lead Solder Temperature (5 sec. max; 1/16 inch from case)
(1) Measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
Characteristic
Fig. No.
Symbol
Min
Typ
-
V(BR)R
2
4
-
VF
-
Fig. No.
Symbol
4,5
PL
2
1
Reverse 8reakdown Voltage
(lR = 100 !
:s
~
!2
-
5
ESKA SH4001 FIBER
0.1
Ii:
a
-IF
100mA
"
0.01
60
80
100
120
IF, FORWARD CURRENT (mA)
140
160
12
1
0.9
0.8
:: 0.7
~ 0.6
>~
0.5
§
0.4
~
.?
0.3
0.2
0.1
16
20
24
ABER LENGTH (M)
28
I
I
/
f "\
\
\
\
1\
I
1\
\
/
-
....-
760
V
780
"'
800
820
840
860
...........
!--.
sao
A, WAVELENGTH (nm)
Figure 3. Typical Spectral Output
versus Wavelength
hmSf---,l METER
ESKA SH4001
32
36
Figure 2. Power Launched versus Fiber Length
Figure 1. Normalized Power Launched versus
Forward Current
~
"
PHOTODYNE
saXLA
WITH 350
INTEGRATING
SPHERE
O.u.T.
Figure 5. Optical Rise and Fall Time
Test Set (1 OO/O--SO"Ao)
Figure 4. Power Launched Test Set
9-22
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MFOE76
Fiber Optics - FLCS Family
Visible Red LED
The MFOE76 is designed for low cost, medium frequency, fiber optic systems using 1000 micron
core plastic fiber. It is compatible with Motorola's wide variety of detector functions from the
MFOD70 series. The MFOE76 employs gallium aluminum technology, and comes pre-assembled
into the cOnvenient and popular FLCS connector.
Features:
•
•
•
•
•
FLCS FAMILY
RBER OPTICS
VISIBLE RED
LED
660 nm
LowCost
Very Simple Fiber Termination and Connection. See Figure 9
Convenient Printed Circuit Mounting
Integral Molded Lens for Efficient, Coupling
Mates with 1000 Micron Core Plastic Fiber, such as Eska SH4001
Applications:
• Medical Electronics
• Industrial Controls
• Security Systems
• Short Haul Communication Systems
• High Isolation Interconnects
• M6800 Microprocessor Systems
CASE 3638-01
STYLE 1
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
Value
Unit
VR
5
Volts
mA
Forward Current -
Continuous
IF
60
Forward Current -
Peak Pulse
IF
1
A
Po
132
2
mW
TA
-40 to + 100
"C
Tstg
-40 to +100
-
260
'c
'c
Total Power Dissipation
Derate above 35"C
(0
TA
~~
25'C (I)
Ambient Operating Temperature Range
Storage Temperature
Lead Soldering Temperature (2)
mWrC
Notes: 1. Measured with device soldered into a typical printed circuit board.
2. 5 seconds max; 1116 inch from case.
PHOTOOYNE
1 METER
ESKA SH4001
PHOTOOYNE
88XLA
WITH 350
INTEGRATING
SPHERE
"TEKTRONIX
7904
WITH
7A24
PLUG IN
Ion
O.U.T.
Figure 1. Power Launched Test Setup
Figure 2. Optical Turn-On and Turn-Off Test Setup
9-23
MFOE76
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Leakage Current (VR
Reverse Leakage Current (VR
Forward Voltage (IF
=
Symbol
Min
Typ
Max
IR
-
100
-
nA
-
10
100
pA
1.8
2.2
= 3 V)
= 5 V)
IR
60 mAl
VF
-2.2
C
-
Symbol
Min
Typ
Ap
-
660
PL
200
540
Optical Turn-On Time (Figure 2)
ton
toff
Half-Power Electrical Bandwidth (1)
BWe
-
200
Optical Turn-Off Time (Figure 2)
Temperature Coefficient of Forward Voltage
Capacitance (f
=
1
O. 9
~
~
I
I
~
~ 0.4
~i-"
~ 0.3
a:
/"
>'"'-
1.5
O. 7
~ O. 6
~ O. 5
f? 1.7
1.6
O. 8
~
I--.-
-
\
600
Figure 3, Forward Voltage versus Forward Current
\
\
1""-..
/
....-
O. 1
1000
10
100
IF, LED FORWARD CURRENT ImAI
1
/
O. 2
/
/
"""--
680
640
A, WAVELENGTH Inml
720
Figure 4. Relative Spectral Output
1000
1000
~PULSE
ONLY
c-- PULSE OR DC
---V
0
-:--..
~
,
3
100
~
....- ....-'"
"
u
z
:s=>
.......
0
or:
~
~
r-..
1
;i
u
~
0
=
-
ESKA SH4001 FIBER
IF = 100 mA PULSED
.........
O. 1
......
,2
/
10
1
10
100
W
IF, FORWARD CURRENT (mAl
Figure 5_ Power Launched versus LED Forward Current
9-24
~
W
00
100 1W
FIBER LENGTH (ml
1~
~
~
200
Figure 6_ Power Launched versus Fiber Length
MFOE76
§
'"
:5
a:
~ o. 5 -
fi"
V>
~
--
16 0
I--..
'"""-
r--..
NORMALIZED TO:
TA ~ 25°C
0
""-
=>
~
z
u
I-
MFOD75 ?;'>;~(:
MFOD71/ . . ,.
0
~
o?
/
100
a
80
'"
'"~
'"o
60
0.2
-
:,.......--
790
V
810
/
\
\
125
I
15
I
I
I
I
I
I
/
./
o
o
20
J
1
VF, FORWARD VOLTAGE IVOLTS)
Figure 4. Forward Current versus
Forward Voltage
NORMALIZED TO:
f 1 MHz
\
1
1-3 dB) 0.5
o
1\
/
830
_2 __ P~LSE O~LY
20
......
1\
0.3
0
25
50
75
100
TJ, JUNCTION TEMPERATURE 1°C)
r "\
II
0.4
0.1
I
/
-25
~40
\
10
i
Figure 3. Radial Intensity Distribution
0
iT,T
I MtN
1.... 120 I--- - _ . - PULSE OR DC
r--...
10
TJ
Max
I
/
/
15
20
= 25;C
I
140
./
V
T~
160
r'
~ 0.6
z
-- --
Figure 2. Power Output versus
Junction Temperature
/ 1\
/
\.
0.7
~ -0.012dBI"C
NORMALIZEb TO
-50
Figure 1. Normalized Output Power
versus Forward Current
0.9
-
~
z
;;: 1.00
\
850
870
t!:J
~ o. 1
'" '"
890
A, WAVELENGTH Inm)
o
;;;
t--
910
....:::>
o
'"
~
1
1
10
100
f, FREQUENCY IMHz)
Figure 6. Normalized Output Power
versus Frequency
Figure 5. Spectral Output versus
Wavelength
9-27
150
MFOE1100, MFOE1101, MFOE1102
;;.1 METER 100 ~rn CORE, 0.29 NA
100 rnA
~-~
om.!~ i [1l4::1p=:::::::::,.......
':"
PHOTOOYNE·
88XLA
t
AMPHENOL
RECEPTACLE
#905-138-5001
OFTI or AMPHENOL
SMA TERMINATION
RADIOMETER
WITH #350
INTEGRATING
SPHERE
Figure 7. Launched Power Test Set
-
D.U.T.
1.3kO
TRACKING
GENERATOR
L -_ _ _---lt------.TEK
T8302
1.3kO
lN4001
HH'--o 24 Vdc
OUTPUT
[I]
TEKTRONIX 7L 14·
SPECTRUM
ANALVZER
NOTE: ALL lEAD LENGTHS AS SHORT AS POSSIBLE.
1000 pF CAPACITOR IS ACHIP CAPACITOR.
7603 MAIN FRAME
Figure 8. Bandwidth Test Set
9-28
MFOE1100, MFOE1101, MFOE1102
AVERAGE COUPUNG EFFICIENCY
Fiber Core
Diameter (I'm)
Numerical
Aperture
Coupling
Efficiency (%)
200
100
85
62.5
50
0.4
0.29
0.26
0.28
0.2
28
4.5
2.6
1.6
0.7
COMPATIBLE WITH AMP #228756·1, AMPHENOL #905-138-5001,
DEUTSCH 3146-04 AND OFT! # PCROOl RECEPTACLES USING MOTOROLA
ALIGNMENT BUSHING MFOA06(INCLUDEDI
Figure 9. Coupling Efficiency
Figure 10. Package Cross Section
25
20
......
.............
.........
./~
40
V
~
------
I--
80
120
IF, FORWARD CURRENT (mAl
Ir
160
Figure 11. Rise and Fall Time versus
Forward Current
9-29
~
200
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MFOE1200
Fiber Optics
Infrared LED (850 nm)
The MFOE1200 is designed for fiber optics applications requiring high power and fast
response time.
HERMETIC FAMILY
FIBER OPTICS
INFRARED LED
Features:
• Fast Response - > 70 MHz Bandwidth
• 250 I'm Diameter Spot Size
• Hermetic Package
• Internal Lensing Enhances Coupling Efficiency
• Complements AH Motorola FO Detectors
• Compatible With AMP #228756-1, Amphenol #905-138-5001, and RadiaH #F086600380
Receptacles Using Motorola Alignment Bushing MFOA06 (Included)
Applications:
• Medical Electronics
• Security Systems
~f~¥~~
"'(y
'
0
I
II
f "\
\
0.1
~
-
790
V
\
830
~
~
'3
1\
/
810
1
:
I
I
ex:
1\
I
V
1.5
1
:
i i i :;..
iii' 1.25
.-
0.4
~ 0.3
~ 0.2
~
\
\
0.5
ex:
~
I
850
870
0.75
-f-iI TJ
t
SLOPE ~ -0.012 dB/"C--t--+----l
-I"--
.
I
-.-~ ---t----t---i
--I"--r-I
-+---+- --+--+--+---=,,"-='"---i
1
I MIN
0.51--+....1-+--+-+--+--+--+---+---;- TJ
o_00.251---+.;.1-+_-+_ NORMALIZED Ta:
I MAX
!
TJ ~ 25"C -+-----i-~il!---l
1;
"'
............
890
r-
1
I
-~
910
A. WAVELENGTH Inml
Figure 1. Relative Spectral Output
I
- - PUlSE ONLY
PUlSEOROC
--
1
V
./
1
=
NORMAlIZED TO
if loomA_
0.01
5
10
20
50
100
iF. INSTANTANEOUS FORWARD CURRENT (mAl
2
200
Figure 3. Power Output versus Forward Cunent
9:
loomA
;. 1 METER 100 JLm CORE. 0.29 NA
!
~
rn
~
Figure 2. Power Output versus Junction Temperature
10
f--
I
-25
0
25
~
~
TJ. JUNCTION TEMPERATURE lOCI
VlA::t:::J:==OPT~ICA
===e::tJ:=t=::J:::::
....L FIBER.......
PHOTODYNE
88XlA
RADIOMETER
WITH #350
OFTI OR AMPHENOL
SMA TERMINATlONS
#9115-138-5001
Figure 4. launched ~ (PLI Test Set
9-31
INTEGRATING
SPHERE
MOTOROLA
-
SEMICONDUCTOR
TeCHNICAL DATA
Fiber Optics -
MFOE1201
MFOE1202
MFOE1203
High Performance Family
Infrared LED (850 nm)
The MFOE1201, MFOE1202 and MFOE1203 are designed for Short Haul «2Km) fiber
optics applications requiring fast response time.
HERMETIC FAMILY
FIBER OPTICS
INFRARED LED
Features:
• Fast Response - Digital Data to 200 Mbaud (NRZ)
• Guaranteed 100 MHz Analog Bandwidth
• Hermetic Package, Figure 10
• Internal Lensing Enhances Coupling Efficiency
• Complements All Motorola Fiber Optics Detectors
Applications:
• Medical Electronics
• Security Systems
•
•
•
•
• CATV
• Computer and Peripheral Equipment
Industrial Controls
M6BOO Microprocessor Systems
Video Systems
Communication Systems
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IR
1
mA
IF
100
rnA
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
250
2.27
mW
mW/'C
Operating Temperature Range
TA
-55 to + 125
'C
Tstg
-65 to + 150
'C
Symbol
Max
Unit
6JA
440
225*
'CIW
Reverse Current
Forward Current -
Continuous
Storage Temperature Range
CASE 210A-Ol
METAL
STYLE 1
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Ambient
*Installed in compatible metal connector housing with Motorola alignment bushing.
ELECTRICAL CHARACTERISTICS (TA
= 25'C)
Characteristic
Reverse Breakdown Voltage (lR
Forward Voltage (IF
=
Total Capacitance (VR
=
100/LA)
100 mAl
= 0 V, f =
1 MHz)
Electrical Bandwidth. Figure 6
(IF = 80 mAde, measured 10 MHz to 110 MHz)
Symbol
Min
Typ
Max
Unit
V(BR)R
2
4
-
Volts
VF
1.5
1.9
2.2
Volts
CT
-
70
-
pF
BWE
100
-
-
MHz
Symbol
Min
Typ
OPTICAL CHARACTERISTICS ITA = 25'C)
Characteristic
Total Power Output
(IF = 100 mA, A = 850 nm)
Power Launched, Figure 7 (IF
Max
-
MFOE1201
MFOE1202
MFOE1203
=
100 mAl
Unit
/LW(dBm)
Po
40(-14)
75(-11.3)
135(-8.7)
-
1500 (1.76)
2400 (3.80)
2BOO (4.46)
-
-
80(-11)
150(-8.3)
270(-5.7)
/LW(dBm)
-
-
-
MFOE1201
MFOE1202
MFOE1203
PL
Numerical Aperture of Output Port (at -10 dB), Figure 3
(250/Lm [10 mil] diameter spot)
NA
-
0.3
Wavelength of Peak Emission @ 100 mAde
A
-
nm
-
-
850
Spectral Line Half Width
50
-
nm
Optical Rise and Fall Times, Figure 12
(IF = 100 mAde)
tr
-
2.B
4
ns
tf
-
3.5
6
9-32
MFOE1201, MFOE1202, MFOE1203
:
10
f::: ----- PULSE ONLY
f:::-- PULSE OR DC
5
I
I
~ 1.25
!..
;z
I
~ 1.50
~~
a
~ 1.00
"
/'
~
:;c
NORMALIZED TO: ~
iF
lOOmA
== ~
-
~ -0.012dBfC
I
0.75
I
~
5 0.50
NORMALIZEb TO
TJ = 25"<:
I
a
...... r--......
--
......
TJ
Max
J? 0.25 r---- 1-T
I MtN
0.01
5
10
20
50
100
iF. INSTANTANEOUS FORWARD CURRENT (rnA)
2
200
-50
0.7
~ 0.5
~ 120
~ 0.4
/
L
0.3
0.2
"
/
i
>-
1\
\
a
'"
~
0.1
o
15
"- .....
10
5
0
5
DEGREES OFF AXIS
10
~
Oil
0.8
~ 0.7
a
~
>-
""
/
0.6
/
/
f \
II
0.5
\
15
:::>
0.4
'"
~
0.3
:;c
~
0.2
0.1
BO
I
60
I
\
\
V
830
./
o
o
1
VF. FORWARD VOLTAGE (VOLTS)
(-3 dB) 0.5
/
810
L
Figure 4. Forward Current versus
Forward Voltage
\
I
790
/
NORMALIZED TO:
f 10 MHz
/
-
I
20
20
>-
a
--~-- P~LSE ~NLY
100
Figure 3. Radial Intensity Distribution
1
0.9
150
- - PULSE OR DC
~40
\
V
20
-
a
./
125
,
140
r
~
0.6
z
~
~
160
/ '\
V '\
0.8
0
25
50
75
100
TJ. JUNCTION TEMPERATURE ('C)
Figure 2. Power Output versus
Junction Temperature
Figure 1. Normalized Output Power
versus Forward Current
0.9
-25
850
870
\
I
\
~ 0.1
"890
A. WAVELENGTH (nm)
--910
§
~
\
10
Figure 5. Spectral Output versus
Wavelength
2D
40
100
200
f. FREQUENCY (MHz)
400
Figure 6. Normalized Output Power
versus Frequency
9-33
1000
MFOE1201, MFOE1202, MFOE1203
100 mA
;>1 METER 100 I£m CORE, 0,29 NA
~~
!~ "i ~P==:::::=::::::::::~::::::====C~t~~
PHOTODYNE
88XLA
RADIOMETER
WITH #350
INTEGRATING
SPHERE
O.u.T,
':"
AMPHENOL
RECEPTACLE
#905·138·5001
OFTI or AMPHENOL
SMA TERMINATION
Figure 7. Launched Power Test Set
J"---..
L-_ _ _ _
TRACKING
GENERATOR
TEK T8302
1N4001
~O-I4--<>
OUTPUT
24 Vdc
[I]
TEKTRONIX 7L 14
SPECTRUM
ANALYZER
NOTE: ALL LEAD LENGTHS AS SHORT AS POSSIBLE.
1000 pF CAPACITOR IS ACHIP CAPACITOR.
7603 MAIN FRAME
Figure 8. Bandwidth Test Set
AVERAGE COUPLING EFFICIENCY
Fiber Core
Diameter (pm)
Numerical
Aperture
Coupling
Efficiencv (%)
200
100
85
62.5
50
0.4
0.29
0.26
0.28
0.2
28
4.5
2.6
1.6
0.7
COMPATIBLE WITH AMP #228756-1, AMPHENOL #905-138·5001
AND OFT! # PCROO1 RECEPTACLES USING MOTOROLA
ALIGNMENT BUSHING MFOA06 (INCLUDED)
Figure 9. Coupling Efficiency
Figure 10. Package Cross Section
9-34
MFOE1201, MFOE1202, MFOE1203
VCC
VCC
R3
R4
,
RS
C2l'
Y .......
Rl
I'......
~r------+---{
Cl
(Cl = C2 = C3 = 0.Q18 ",F, Rl = S.2 kO
R2 = S8ll,R3 = 30ll,R4 = 3.Sll,
R5 = 10ll,RS = 110ll,VCC = 12VI.
If
~
V
---
t--
-I,
R5
40
80
120
lSO
200
IF, FORWARD CURRENT (mAl
220
Figure 12. Rise and Fall Time versus
Forward Current
Figure 11. LED Drive Circuit to 100 MHz
9-35
9-36
Section Ten
Emitter/Detector Chips
MFODC1100WP ............................ 10-2
MFOEC1200WP ............................ 10-4
MLEDC1000WP ........... ................ 10-6
MRDC100WP .............................. 10-8
MRDC200WP .............................. 10-10
MRDC400WP .............................. 10-12
MRDC600WP .............................. 10-15
10-1
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL·· DATA
MFODC1100WP
Photo Detector Chip
Diode Output
The MFODC1100WP is designed for infrared radiation detection in high frequency Fiber
Optic Systems.
• Fast Response - 1 ns Max
• Anode/Cathode Metallization Compatible with Conventional Wire and Die Bonding
Techniques
• Available in Chip or Wafer Form
MAXIMUM RATINGS (TA
=
25'C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
50
Volts
Power Oissipation(1)
Po
50
mW
Operating Junction Temperature Range
TJ
-65 to +125
Tstg
-65 to +200
'c
'c
Storage Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (fA
Characteristic
= 25'C unless otherwise
Symbol Min
10
-
V(BR)R
Forward Voltage
(IF = 50 mAl
Junction Capacitance
(VR = 5 V, f = 1 MHz)
Dark Current
(VR = 5 V, RL
=
1 MO, H
FIBER OPTICS
PHOTO DETECTOR
CHIP
DIODE OUTPUT
= 0)
Reverse Breakdown Volt&ge
(lR = 10,.A)
Typ
noted)
Max
Unit
1
nA
50
-
-
Volts
VF
-
0.7
1
Volts
Cj
-
-
2
pF
Back = Cathode
OPTICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Radiation Responsivity
(VR = 5 V, A = 850 nm, P
=
R
0.3
0.4
-
p.A/".W
tr, tf
_.
0.5
1
ns
10 ".W)
Response Time
(VR = 5 V, A = 850 nm)
A = Anode
DIE SPECIFICATIONS
Matallization
Bond Pad Size Mils
Die Size
Mils
Die Thickness
Mils
Anode
30 x 30
8-10
4 dia.
I
I
Cathode
Front(2)
30 x 30
AI
I
I
Back(31
ActiveAr..
Square Mils
Au
154
NOTES: 1. Maximum power dissipation rating is determined with chip mounted on a header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Thickness - a minimum of 10,000 A.
3. Thickness - a minimum of 15,000 A.
10-2
MFODC1100WP
TYPICAL CHARACTERISnCS
100
/
90
80
Z
70
12
!!l
50
~
30
/
III
z 60
~
w
a::
,
""\
/
40
Ia
,
/
~d
- 0.1
\c
20
/
10
\..
r--....
o
0.2
0.3
10
!
1\
\
\
0.4
0.5
0.6
0.7
0.8 0.9
A, WAVELENGTH (I'm)
1.1
0.01
1.2
r-'
-55
-35 -15
5
25
45
66
85
105 125
TAo TEMPERATURE (OC)
Figure 2. Dark Current versus Temperature
Figure 1. Relative Spectral Response
ORDERING INFORMATION
This die is available with the packaging and visual inspection listed below.
TABLE 1
Die
Type
Suffix
WP
Packaging
Wafer Pak
Description
Wafer-probed, unscribed, unbroken and heat sealed in plastic bag
(rejects are inked)
10-3
Visual Inspection
Visual inspected by
sample to a LTPD = 10
MOTOROLA
-
SEMICONDUCTOR
TeCHNICAL DATA
MFOEC1200WP
Infrared LED Chip
The MFOEC1200WP is designed for fiber optic applications requiring fast response time.
• Fast Response - 90 MHz Bandwidth Typ
• High Power Output - 1.5 mW Min
• Anode/Cathode Metallization Compatible with Conventional Wire and Die Bonding
Techniques
• Available in Chip or Wafer "Form
FIBER OPTICS
INFRARED
LED CHIP
MAXIMUM RATINGS (TA ~ 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
2
Volts
Forward Current - Continuous
IF
100
mA
Forward Current - Peak
(1 p.s Pulse, 50% Duty Cycle)
IF
200
mA
Power Dissipation(l)
PD
200
mW
Operating Junction Temperature Range
TJ
-65 to +125
°C
Tstg
-65to +150
°C
Storage Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted)
Charact.ristic
Reverse Breakdown Voltage (lR
Forward Voltage (IF
~
~
Symbol
Min
V(BR)R
2
100,.A)
100 mAl
Junction Capacitance (VR
~
0 V, f
~
1 MHz)
Typ
Max
Unit
-
Volts
2.5
Volts
-
pF
VF
1
-
Cj
-
70
Back
OPTICAL CHARACTERISTICS (TA ~ 25°C unless otherwise noted)
Total Power Output (IF
~
100 mAl
Wavelength of Peak Emission (IF
~
Optical Rise Time (IF
Optical Fall Time (IF
~
~
Po
100 mAdc)
Ap
100 mA. 10%-90%)
tr
100 mA, 10%....90%)
tf
1.5
-
-
-
mW
4
5
ns
5
7
ns
850
~
Anode
K = Cathode
*Emission area
nm
DIE SPECIFICATIONS
Metallization
Bond Pad Size Mils
Di.Slze
Mils
DI.Thickn.....
Mils
Anod.
24x 24
8-10
24x 24
I
I
Cathod.
Front(Z)
3.5 dia.
Au
I
I
Back(3)
Active Area
Square Mils
Au
7
NOTES: 1. Maximum power dissipation rating is determined with chip mounted on a header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Thickness - a minimum of 10.000 A..
3. Thickness - a minimum of 15,000 A.
10-4
MFOEC1200WP
TYPICAL CHARACTERISTICS
100
/
90
V
80
~
70
~
=> 60
0
50
i'"
40
/
,
30
~
/
20
/
/
I
\
11~:
\
\
\
/
~
a::
\
\.
/
~ 10
o~
780
800
820
840
860
860
WAVELENGTH (nm)
1
~.... 0.75
", 900
920
§
0.5
....; 0.25
I
I
-
!..
SLOPE = - 0.012 dBfC
~r--
I
I
I
--r--.
:--.
TJ
Max
I
I
:
940
-50
Figure 1. Spectral Output versus
Wavelength
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE
125
150
Figure 2. Power Output versus
Junction Temperature
10
-
is
I:J
::J
:li
a::
0
~
a::
~....
~
1.2
1--+-++f--ttttt--+--HI-t-1H-t1H----t---t+t-HtIt-++t+t+Iti
V
0.1
./
0
a?
0.01
10
20
50
100
200
iF, INSTANTANEOUS FORWARD CURRENT (mA)
°1~EO~~-L~~~1~E~I--~~L5LL~lE~2--~2~-L~LU1~E3~~-L~~~IE4
ELAPSED TIME (HOURS)
Figure 3. Normalized Output Power
versus Forward Current
Figure 4. Power Output versus Time
ORDERING INFORMATION
This die is available with the packaging and visual inspection listed below.
TABLE 1
Die
Type
Suffix
WP
Packaging
Wafer Pak
Description
Wafer·probed, unscribed, unbroken and heat sealed in plastic bag
(rejects are inked)
10-5
Visual Inspection
Visual inspected by
sample to a LTPD = 10
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MLEDC1000WP
Infrared LED Chip
The MLEDC1000WP is designed for applications requiring a stable, high power, low
drive current infrared emitting diode which is spectrally matched for use with silicon
detectors.
•
•
•
•
•
High Power Output - 2 mW Min
Infrared Emission - 940 nm Typ
Low Drive Current - 50 mA Typ
Metallization Compatible with Conventional Wire and Die Bonding Techniques
Available in Chip or Wafer Form
GaAs
INFRARED
LED CHIP
MAXIMUM RATINGS (TA = 25·C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
3
Volts
Forward Current, Continuous
IF
100
mA
Forward Current, Peak
(1
Pulse, 1% Duty Cycle)
IF
1
A
Power Dissipation(l)
Po
150
mW
Operating Junction Temperature Range
TJ
-65 to + 125
·C
Tstg
-65 to +150
·C
,..S
Storage Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
3
-
-
Volts
Volts
Reverse Breakdown Voltage
(lR = 100,..A)
Forward Voltage
(IF = 50 mAl
VF
-
-
1.5
Junction Capacitance
(VR = 0 V, f = 1 MHz)
Cj
-
150
-
pF
Back
OPTICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
Total Power Output
(IF = 50 mAl
Po
2
-
-
mW
Peak Emission Wavelength (IF = 50 mAl
Ap
-
940
-
nm
Optical Rise Time
(IF = 10 mA. 10% to 90%)
tr
-
600
-
,..s
Optical Fall Time
(IF = 10 mA. 10% to 90%)
tf
-
600
-
,...
A
=
=
Cathode
Anode
DIE SPECIFICATIONS
Bond Pad Size Mils
Cathode
Die Size
Mils
Die Thickness
Mils
Anode
16x 16
8-10
4x4
Metallization
I
1
Front(2)
16 x 16
AI
I
I
Back(3)
Active Area
Square Mils
Au
240
NOTES: 1. Maximum power dissipation rating is determined with chip mounted on a header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Thickness - a minimum of 10,000 A.
3. Thickness - . minimum of 15,000 A.
10-6
MLEDC1000WP
TYPICAL CHARACTERISTICS
/ 1\
/ \
II
o
./
~
\
\
~
2(---
~ i?i
r- ..,.-t-+·ci"tT*
~~ 1.B _..
~ ~
~ ~
I
I
I
II
1\
\
~~
i'...
900
800
r----t-H++++++-++-+++++1-
2.2 (---.-
1.4 r---+-++t~+I+
~
1.2
940
980
WAVELENGTH Inml
1060
'" .......
a:
0
;;
~::::>
'"
......
0.7
0
!
0.5
'"
J_
t-L . . . . . . _.
100
Figure 2. Forward Characteristics
ORDERING INFORMATION
r-....
This die is available with the packaging and visual
inspection listed below .
...........
...........
.E
0.3
-75
-50
-25
25
50
75
100
150
TJ, JUNCTION TEMPERATURE lOCI
Figure 3. Power Output versus Junction Temperature
TABLE 1
Die
Type
Suffix
WP
Packaging
Wafer Pak
1k
iF, INSTANTANEOUS FORWARD CURRENT ImAI
Figure 1. Relative Spectral Output
I
~---t-+-++++H-~I-I--- -+
1 L----L-l.--'-'-LLUL_..._
10
1
"I
1;1-"
v-:
I-
~
r--.....
1020
,--
r----+-+'t-tt+ttt
1.6 1---- f--
Description
Wafer-probed, unscribed, unbroken and heat sealed in plastic bag
(rejects are inked)
10-7
Visual Inspection
Visual inspected by
sample to a LTPD ~ 10
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MRDC100WP
Photo Detector Chip
Diode Output
The MRDC100WP is designed for the detection and demodulation of near infrared and
visible light sources where ultrahigh speed and stable characteristics are required.
• Silicon Nitride Passivated Junction
• Anode/Cathode Metallization Compatible with Conventional Wire and Die Bonding
Techniques
• Ultra Fast Response - 1 ns Typ
• High Responsivity - 0.4 ,.AI".W Typ
• Available in Chip or Wafer Form
MAXIMUM RATINGS (TA
PHOTO DETECTOR
CHIP
PIN SILICON
DIODE OUTPUT
= 25·C unless otherwise noted)
Rating
Symbol
Value
Unit
VR
100
Volts
PD
100
mW
TJ. Tstg
-65 to +200
·C
Reverse Voltage
Power Dissipation(l)
Operating Junction and Storage Temperature
STATIC ELECTRICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
Symbol
Min
Max
Unit
ID
-
-
10
nA
V(BR)R
100
-
-
Volts
Forward Voltage
(IF = 50 mAl
VF
-
-
1.5
Volts
Junction Capacitance
(VR = 20 V. f = 1 MHz)
Cj
-
2.5
4
pF
0.4
-
pAJ".W
1
-
ns
Characteristic
Dark Current
(VR = 20 V. H
Typ
= 0)
Reverse Breakdown Voltage
fiR = 10".A)
OPTICAL CHARACTERISTICS (TA = 25·C unless otherwise noted)
Responsivity
(VR = 20 V. A
R
0.3
Back
= 850 nm)
Switching Times
(VR = 20 V. R~ = 50
H = 1 mW/cm )
ton. toff
n. A = 850 nm.
-
A
= Cathode
= Anode
DIE SPECIFICATIONS
Bond Pad Size Mils
Die Size
Mils
Die Thickness
Mils
Anode
30x 30
8-10
4.5 x 4.5
I
I
Metallization
Cathode
Front(2)
30 x 30
AI
I
I
Back/3)
Active Area
Square Mils
Au
380
NOTES: 1. Maximum power dissipation rating is determined with chip mounted on a header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Thickness - 8 minimum of 10,000 A.
3. Thickness - a minimum of 15,000 A.
10-8
MRDC100WP
TYPICAL CHARACTERISTICS
10,000
1.... 100
z
T=1 25'C
H= 0
1
....
,..
:l!
a:
=>
u
0.2
VR 20V~
H 0=
1000
z
:l!
a:
10
=>
u
""~
............
0.1
""a:c
<[
,..
.9
0.15
V
.9 0.05
50
25
75
100
TA, TEMPERATURE ("C)
V
o
o w m
150
125
/
~ 70
III
z 60
II!
!;l;!
~
w
a:
~
M
\
0.4
0.5
90
"
,
'-1.2
0.6
0.7 0.8
0.9
A, WAVElENGTH Il'm)
o
o w m
1.1
Figure 3. Relative Spectral Response .
30
~
50
90
M
VR, REVERSE VOLTAGE (VOLTS)
90
90
Figure 4. Capacitance versus Voltage
ORDERING INFORMATION
This die is available with the packaging and visual inspection listed below.
TABLE 1
Die
Type
Suffix
WP
Packaging
Wafer Pak
~
Figure 2. Dark Current versus Reverse Voltage
r\.
/
0.3
90
\
o
0.2
50
\
/
30
10
50
f = 1 MHz
\
\
/
50
m
~
\
90
~
~
8
/ '\
90
~
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Dark Current versus Temperature
100
...- ....-
/'
0.1
0.01
./
V
-
Description
Wafer·probed, unscribed, unbroken and heat sealed in plastic bag
(rejects are inked)
10-9
Visual Inspection
Visual inspected by
sample to a LTPD = 10
~
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MRDC200WP
Photo Detector Chip
Transistor Output
The MRDC200WP is designed for detection and demodulation of near infrared and
visible light sources where high sensitivity and stable characteristics are required.
• Silicon Nitride Passivation
• Emitter, Base, Collector Metallization Compatible with Conventional Wire and Die
Bonding Techniques
• Available in Chip or Wafer Form
PHOTO DETECTOR
CHIP
NPN SILICON
TRANSISTOR OUTPUT
MAXIMUM RATINGS (TA = 25° C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Volts
Emitter-Collector Voltage
VECO
7
Volts
Collector-Base Voltage
VCBO
70
Volts
Power Dissipation(l)
PD
100
mW
Operating Junction Temperature Range
TJ
-65 to +150
°C
Tstg
-65 to +200
°C
Storage Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
ICEO
-
Collector-Base Breakdown Voltage
(lCB = 100 !
u
;;;;;;
==
H
VCE
100
0
20 V
/
80
~
::.:::
m
z 60
0.1
~
V
12
~ 0.01
!!l
~
0.001
6
J:j 0.0001
0.00001
-50
-25
0
25
50
75
100
125
0.4
0.5
20
!:Ii
;:::
10
0.6
\
1.1
0.8
0.9
0.7
A. WAVELENGTH (/Lml
100
50
;;::....
~ :--.. r........ ........
....... ':::::r-.
1
0.1
RL
1000
RL
100
10
10
I
I
0.2
1000
100
0.5
1
2
IC. COLLECTOR CURRENT (mAl
10
1
0.1
0.2
0.5
1
2
IC. COLLECTOR CURRENT ImAI
Figure 4. Typical Turn-Off Switching Times
Figure 3. Typical Turn-On Switching Times
ORDERING INFORMATION
This die is available with the packaging and visual inspection listed below.
TABLE 1
Die
Type
Suffix
WP
1.2
Figure 2. Constant Energy Spectral Response
100
j
\
\
o
TA. AMBIENT TEMPERATURE (OCI
50
\
/
20
Figure 1. Dark Current versus Temperature
""""1\\
/
~ 40
8~
/
/
Packaging
Wafer Pak
Description
Wafer·probed. unscribed. unbroken and heat sealed in plastic bag
(rejects are inked)
10-11
Visual Inspection
Visual inspected by
sample to a LTPD ~ 10
10
MOTOROLA
-
SEMICONDUCTOR
TECHNICAL DATA
MRDC400WP
Photo Detector Chip
Darlington Output
The MRDC400WP is designed for detection and demodulation of near infrared and
visible light sources where high sensitivity and stable characteristics are required.
• Silicon Nitride Passivation
• Emitter, Base, Collector Metallization Compatible with Conventional Wire and Die
Bonding Techniques
• Available in Chip or Wafer Form
PHOTO DETECTOR
CHIP
NPNSIUCON
DARUNGTON OUTPUT
MAXIMUM RATINGS (TA ~ 25"C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
50
Volts
Emitter-Base Voltage
VEBO
6
Volts
Collector-Base Voltage
VCBO
60
Volts
Power Dissipation(lI
PD
250
mW
Operating Junction Temperature Range
TJ
-65 to +150
"C
Tstg
-65 to +200
"C
Storage Temperature Range
STATIC ELECTRICAL CHARACTERISTICS (TA ~ 25"C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ICEO
-
Collector-Base Breakdown Voltage
(lc ~ 100 !£A)
V(BR)CBO
55
-
Collector-Emitter Breakdown Voltage
(lC ~ 1 mAl
V(BR)CEO
45
-
Collector Dark Current (VCE
~
10 V, H = 0)
Emitter Base Leakage Current
(VEB ~ 10 V)
lEBO
Unit
Max
100
nA
-
Volts
-
-
Volts
-
100
Back
!£A
B
E
OPTICAL CHARACTERISTICS (TA ~ 25"C unless otherwise noted)
Light Current (VCE ~ 5 V, RL ~ 10 Ohms)(2)
IL
Optical Turn-On Time
(VCE = 10 V, IC ~ 20 mA, A ~ 940 nm)
-
20
-
-
RL~1000n
Optical Turn-Off Time
(VCE ~ 10 V, IC ~ 20 mA, A 940 nm)
30
140
~
mA
p.s
-
1000 n
Base
Emitter
-
toff
RL~100n
=
~
Collector
p.s
ton
RL~100n
RL
0.8
~
35
210
-
DIE SPECIFICATIONS
Bond Pad Size Mils
Ole Size
Mils
Die Thickness
Mils
Emitter
27 x 27
8-10
4x4
I
I
Metallization
Ba.e
Front(3)
4 dis.
AI
I
I
Back(4)
Active Area
Square Mils
Au
357
NOTES: 1, Maximum power dissipation rating is determined with chip mounted on a header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Radiation flux density (HI equal to 1 mW/cm 2 emitted from a tungsten source at a color temperature of 2870K.
3. Thickness -, a minimum of 10,000 A.
4. Thickness -
a minimum of 15,000 A.
10-12
MRDC400WP
TYPICAL CHARACTERISTICS
10
10
5
,..- ........
~
~
./
./
./
!z
V
~
a
C---
VCE 5V H(i1870~ -
/
-
0.1
./'
1
0.7
!]:: 0.5
'"5. 0.3
0.1
~
U
~
M
U
U
U
~
""
I
0.1
-60 -40
U
VCE 5 V
H = 0.5 mW/cm1 @ 1870K . -
/"
0.2
o
1000
100
00
~
10
~
~ lJ.
V
-4
V
~
a:
0
L
-3
1.5
~
z 1.4
--+--"
1) Load dropout due to filament bum out, fusing, etc.
2) Uncalled for load power due to switch failure.
120VAC
The optoisolator provides complete electrical
isolation between logic and power levels.
+5V
10k
LED
O-------------------~~-JA~RM
UGHT
Figure 1. Load Monitor and Alarm
~i-~ ~""~
'-
3.6 k
_____/
100
OR
MOCB06O
The circuit in Figure 2 will detect the presence of an
incoming ring signal causing the output transistor to
be turned on.
270
ll1F
Figure 2. Ring Detector
BATTERY
D45H8
12 k
TO INVERTER
OR ENGINE
STARTER
Figure 3. UPS Solid State Turn-On Switch
11-8
The circuit in Figure 3 detects when the 120 Vac
power line is interrupted causing the outputtransistor
to turn off. This allows C to change and tum on the
2N5308-D45H8 combination which then activates
the auxiliary power supply. A fixed number of
"dropped cycles" can be ignored by the choice of
valueC.
Optoisolator (AC InputITransistor Output) Application Circuits (continued)
o--jl----,
TELEPHONE
UNE
HllAA
--'"1
I
I
___ .JI
AC
Vcc
Figure 4. Power Control by Bell Signal Circuit
The circuit in Figure 4 is an application example for ON/OFF switching of AC loads by a telephone bell signal.
11-9
Optoisolator(Triac Driver) Application Circuits
ACINPl1T
REGULATED Ol1TPl1T
Figure 1. Line Voltage Regulator (Tap Switching)
•
•
•
•
Step Up or Step Down Regulation
Regulated up to 240 Vac
Isolated Control Network Built-In
Zero Crossing Control Umiting Current Surges
11-10
Optoisolator (Triac Driver) Application Circuits (continued)
MICROCONTROLLER
j:
iii
mentum applies. The momentum and density of holeelectron sites are highest at the center of both the valence
and conduction bands, and fall to zero at the upper and
lower ends of the bands. Therefore, the probability of an
excited valence-band electron finding a' site of like momentum in the conduction band is greatest at the center
of the bands and lowest at the ends of the bands.' Consequently, the response of the crystal to the impinging light
is found to rise from zero at a photon energy of Eg electron
volts, to a peak at some greater energy level, and then to
fall to zero again at an energy corresponding to the difference between the bottom of the valence band and the top
of the conduction band.
The response is a function of energy, and therefore of
frequency, and is often given as a function of reciprocal
frequency, or, more precisely, of wave length. An example
is shown in Figure 2 for a crystal of cadmium-selenide. On
the basis of the information given so far, it would seem
reasonable to expect symmetry in such a curve; however,
trapping centers and other absorption phenomena affect
the shape of the curve 1.
The optical response of a bulk semiconductor can be
modified by the addition of impurities. Addition of an
acceptor impurity, which will cause the bulk material to
become p-type in nature, results in impurity levels which
lie somewhat above the top of the valence band. Photoexcitation can occur from these impurity levels to the conduction band, generally resulting in a shifting and reshaping
of the spectral response curve. A similar modification of
response can be attributed to the donor impurity levels in
n-type material.
f\
II
zw
U>
w
>
40
j:
<{
oJ
w
a:
.,;
/
111
\'
I
i
i
60
20
o
4000
V
5000
il
6000
~.
J
I
I
~
I
I
Ii
l~
.
8000
7000
9000
10.000
WAVELENGTH (AI
FIGURE 2 - Spectral Response of Cadmium Selenide
N
SIDE
CONDUCTION BAND
JUNCTION
P
I
I
I
I
/I
SIDE
CONDUCTION BAND
0 FLOW
-
VALENCE BAND
VALENCE BAND
PN Junctions
If a pn junction is exposed to light of proper frequency,
the current flow across the junction will tend to increase.
If the junction is forward-biased, the net increase will be
relatively insignificant. However, if the junction is reversebiased, the change will be quite appreciable. Figure 3 shows
the photo effect in the junction for a frequency well within
the response curve for the device.
'-------1IIIIf---...JVV'Ir-----'
VRB
FIGURE 3 - Photo Effect In a R.......BI_ PN Junction
1. See references for a detailed discussion of these.
11-14
AN440
Under dark conditions, the current flow through the
reverse-biased diode is the reverse saturation current, 10 ,
This current is relatively independent of the applied voltage (below breakdown) and is basically a result of the
thermal generation of hole~lectron pairs.
When the junction is illuminated, the energy transferred from photons creates additional hole~lectron pairs.
The number of hole~lectron pairs created is a function of
the light intensity.
For example, incident monochromatic radiation of H
(watts/cm 2) will provide P photons to the diode:
P= ~~
~
>-
/
80
V
':::
>
I-
iii
60
z
W
!II
W
>
;::
40
«
..J
w
a:
.;
20
/
(3)
where A is the wavelength of incident light,
/
,
1\
/
r---
\
/
a
0.2
h is Planck's constant, and
0.4
1.0
O.B
0.6
J.... WAVELENGTH
c is the velocity of light.
The increase in minority .carrier density in the diode
will depend on P, the conservation of momentum restriction, and the reflectance and transmittance properties of
the crystal. Therefore, the photo current, lA' is given by
IA=1/ F qA,
/\
100
1.2
1.4
(Iolm)
FIGURE 4 - Spectral Response of Silicon Photodiode
(4)
where 1/ is the quantum efficiency or ratio of current carriers to incident photons,
c
G
F is the fraction of incident photons transmitted by the crystal,
q is the charge of an electron, and
A is the diode active area.
Thus, under illuminated conditions, the total current
flow is
1= 10 + IA.
(S)
If IA is suffiCiently large, 10 can be neglected, and by
using the spectral response characteristics and peak spectral
sensitivity of the diode, the total current is given approximately by
FIGURE 5 - Approximate Model of Photodiode
Photo Transistor
If the pn junction discussed above is made the collectorbase diode of a bipolar transistor, the photo-induced current is the transistor base current. The current gain of the
transistor will thus result in a collector~mitter current of
Ie
(6)
where 6 is the relative response and a function of radiant
wavelength,
SR is the peak spectral sensitivity, and
H is the incident radiation.
The spectral response for a silicon photo-diode is given
in Figure 4.
Using the above relations, an approximate model of the
diode is given in Figure S. Here, the photo and thermally
generated currents are shown as parallel current sources.
e represents the capacitance of the reverse-biased junction
while G represents the equivalent shunt conductance of
the diode and is generally quite small. This model applies
only for reverse bias, which, as mentioned above, is the
normal mode of operation.
=(hfe + I) lA'
(7)
where Ie is the collector current,
hfe is the forward current gain, and
IA is the photo induced base current.
The base terminal can be left floating, or can be biased up
to a desired quiescent level. In either case, the collectorbase junction is reverse biased and the diode current is the
reverse leakage current. Thus, photo-stimulation will result in a significant increase in diode, or base current, and
with current gain will I ~sult in a significant increase in
collector current.
The energy-band diagram for the photo transistor is
shown in Figure 6. The photo-induced base current is
returned to the collector through the emitter and the external circuitry. In so doing, electrons are supplied to the
base region by' the emitter where they are pulled into the
collector by the electric field e.
11-15
AN440
EMITTER
BASE
In most cases r'b « rbe, and can be neglected. The
open-base operation is represented in Figure S. Using this
model, a feel for the high-frequency response of the device
may be obtained by using the relationship
COLLECTOR
N
ft
"'...!~.-,
(9)
21TC e
where ft is the device current-gain-bandwidth product.
C
'------111111 f - - - - " V V V - - - - - '
R
VCC
FIGURE 6 - Photoelfact in a Transistor
G
The model of the photo diode in Figure 5 might also be
applied to the phototransistor, however, this would be severely limited in conveying the true characteristics of the
transistor. A more useful and accurate model can be obtained by using the hybrid-pi model of the transistor and
adding the photo-current generator between collector and
base. This model appears in Figure 7.
Assuming a temperature of 25 0 C, and a radiation source
atthe wave length of peak response (i.e., Ii = 1), the following relations apply:
IX'" SRCBO . H,
(Sa)
gm = 40ic , and
(Sb)
£be = hfe/gm,
(Sc)
ic is the collector current, and
rbe is the effective base-emitter
resistance.
FIGURE B - Flosting Sa.. App,oximata Model of Phototransisto,
STATIC ELECTRICAL CHARACTERISTICS
OF PHOTOTRANSISTORS
where SRCBO is the collector-base diode radiation sensitivity with open emitter,
gm is the forward transconductance,
E
Spectral Response
As mentioned previously, the spectral response curve
provides an indication of a device's ability to respond to
radiation of different wave lengths. Figure 9 shows the
spectral response for constant energy radiation for the
Motorola MRD300 phototransistor series. As the figure
indicates, peak response is obtained at about SOOO A
(Angstroms), or O.Sllm.
100
II.
!w
..'0Zw"
'"
ce
'b'
,/ '\
80
60
V
/'
It
W
B
'be
Ce
l~~
vbe
E O-------~--~------_4------
>
;:
40
..
20
«
.J
G
__
w
It
~__oE
0
0.4
\
/
\
1\\
/
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I... WAVELENGTH (I'm)
FIGURE? - Hybrid",i Modal of Photot,ansisto,
FIGURE 9 - Constant Energy Spectra' Rasponsa for MRD300
11-16
AN440
0
" _ 9 0
FIGURE 10 - Polar R_onse of MRD300. Innar Curve with Lans. Outer Curve with Flat GI ....
Angular Alignment
Lambert's law of illumination states that the illumination of a surface is proportional to the cosine of the angle
between the normal to the surface and the direction of
the radiation. Thus, the angular alignment of a phototransistor and radiation source is quite significant. The
cosine proportionality represents an ideal angular response.
The presence of an optical lens and the limit of window
size further affect the response. This information is best
conveyed by a polar plot of the device response. Such a
plot in Figure 10 gives the polar response for the MRD300
series.
100
!w
80
.
60
-
til
Z
o
til
~
--
~
W
0:
w
>
40
j:
«
-'
w
20
0:
o
2500
2600
2700
2800
2900
SOURCE COLOR TEMPERATURE (Ok)
FIGURE 12 - Relative R_onse of MRD300
versus Color Temperature
500
DC Current Gain
The sensitivity of a photo transistor is a function of the
collector-base diode quantum efficiency and also of the dc
current gain of the transistor. Therefore, the overall sensitivity is a function of collector current. Figure 11 shows
the collector current dependence of dc current gain.
z
«
400
IZ
aoo
Cl
w
0:
0:
:>
u
W
II.
200
100
J::
0
0.01
0.1
1.0
10
IC' COLLECTOR CURRENT (mA)
FIGURE 11 - DC Current Gain versus Collector Current
100
Color Temperature Response
In many instances, a photo transistor is used with a
broad band source of radiation, such as an incandescent
lamp. The response of the photo transistor is therefore
dependent on the source color temperature. Incandescent
11-17
AN440
sources are normally operated at a color temperature of
28700K, but, lower-color-temperature operation is not
uncommon. It therefore becomes desirable to know the
result ofa color temperature difference on the photo sensitivity. Figure 12 shows the relative response of the MRD300
series as a function of color temperature.
z
o
Temperature Coefficient of Ip
A number of applications call for the use of phototransistors in temperature environments other than normal
room temperature. The variation in photo current with
temperature changes is approximately linear with a positive
slope of about 0.667%/oC.
The magnitude of this temperature coefficient is primarily a result of the increase in hFE versus temperature,
since the collector-base photo current temperature coefficient is only about 0.1 %/oC.
::;; E
w-.
10
I-
Z
,f
8.0
II r
7.0
w
a:
a:
::>
6.0
f.,
U
a:
5.0
t;
w
4.0
0
3.0
0
.E
2.5
a:~
2.0
n
~.€
!::«
1.5
'>
1.0
1->
~j:
0.5
~!::
iii
Ow
r-
--
1
VCC-20V
SOURCE TEMP - 2870 0 K
-
-
..I
..Jz
o
o
UII)
ciw
4.0
2.0
6.0
8.0
10
H,.RADIATION FLUX DENSITY (mW/cm2)
U
a:
II)
FIGURE 14 - Open B_ Sensitivity versus Radiation for MRD300
VCC
-
_
c
20V
------- ---
H == 5.0 mW/cm 2
SOURCE TEMP"" 2870 0 K
V
5.0
I
4.0
I
0.1
Ii:
Y
..I
..I
U
i5 -
I
9.0
<
oS
j:
«
w
0.2
0.3
0.4
0.5
RB' EQUIVALENT BASE RESISTANCE (Mll)
U
a:
II)
FIGURE 15 - Effect of Base Resistance on Sensitivity of MRD300
2.0
2.0
H == 1.0 mW/cm 2
1.0
o
I
o
2.0 4.0 6.0 8.0
10
12
14
16
18 20
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
FIGURE 13 - Collector Characteristics for MRD300
CoUector Characteristics
Since the collector current is primarily a function of
impinging radiation; the effect of collector-emitter voltage, below breakdown, is smaU. Therefore, a plot of the
IC-VCE characteristics with impinging radiation as a parameter, are very similar to the same characteristics with IB as
a parameter. The collector family for the MRD300 series
appears in Figure 13.
Radiation Sensitivity
The capability of a given photo transistor to serve in a
given application is quite often dependent on the radiation
sensitivity of the device. The open-base radiation sensitivity for the MRD300 series is given in Figure 14. This indicates that the sensitivity is approximately linear with respect
to impinging radiation. The additional capability of the
MRD300 to be pre-biased gives rise to interest in the sensitivity as a function of equivalent base resistance. Figure
IS gives this relationship.
Capacitance
Junction capacitance is the significant parameter in
determining the high frequency capability and switching
speed of a transistor. The junction capacitances of the
MRD300 as a function of junction voltages are given in
Figure 16.
DYNAMIC CHARACTERISTICS
OF PHOTOTRANSISTORS
Linearity
The variation of hFE with respect to collector current
results in a non-linear response of the photo transistor over
10
iL:
3
\ CCB
8.0
w
Z
6.0
~
I-
.««
0
4.0
U
2.0
V CB
1.\
U
«
v.Jus
Cae versus V BE
U
o
o
CCE versus VeE
10
20
30
40
50
V, VOLTAGE (VOLTS)
FIGURE 16 - Junction Capacitances versus Voltage for MRD300
11-18
AN440
large signal swings. However, the small-signal response is
approximately linear. The use of a load line on the collector characteristic of Figure 13 will indicate the degree
of linearity to be expected for a specific range of optical
drive.
the device behavior. These are given as functions of collector current in Figure 19. With this information, the device can be analyzed in the standard hybrid model of Figure
20(a); by use of the conversions of Table I, the equivalent
r-parameter model of Figure 20(b) can be used.
Frequency Response
The phototransistor frequency response, as referred to
in the discussion of Figures 7 and 8, is presented in Figure
17. The device response is flat down to dc with the rolloff
frequency dependent on the load impedance as well as on
the device.. The response is given in Figure I 7 as the 3-dB
frequency as a function of load impedance for two values
of collector current.
TABLE I - Parametar Conversions
hfe
hfb= - 1+ hfe
hfe + I
rc
hre
re=hoe
100
1:
50
~
'C - 250 "A
........
>-
u
zw
20
w
a:
10
::>
CI
II.
ID
-IC-l00"A
I---
SWITCIDNG CHARACTERISTICS
OF PHOTOTRANSISTORS
5.0
'0
M
m
'0
t'
2.0
1.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
RL. LOAD RESISTANCE Iknl
FIGURE 17- 3 dB Frequency versus Load Resistance for MRD300
10
OJ
:s
B.O
::>
~
6.0
w
a:
'\
:-...,
II.
W
II)
0
4.0
"\
,
Ic:510~1~
Z
11.'
Z
="""'h;-
Hfl L
'16 ~~
2.0
o
0.1
1.0
10
100
RS' SOURCE RESISTANCE (kSl)
FIGURE 18 - MRD300 Noise Figure versus Source Resistance
Noise Figure
Although the usual operation of the photo transistor is
in the floating base mode, a good qualitative feel for the
device's noise characteristic can be obtained by measuring
noise figure under standard conditions. The I kHz noise
figure for the MRD300 is shown in Figure 18.
Small Signal h Parameters
As with noise figure, the small-signal h-parameters, measured under standard conditions, give a qualitative feel for
In switching applications, two important requirements
of a transistor are:
(I) speed
(2) ON voltage
Since some optical drives for phototransistors,can provide fast light pulses, the same two considerations apply.
Switching Speed
If reference is made to the model of Figure 8, it can be
seen that a fast rise in the current IA will not result in an
equivalent instantaneous increase in collector-emitter current. The initial flow of IA must supply charging current
to CCB and CBE. Once these capacitances have been
charged, IA will flow through rbe. Then the current generator, gm . Vbe, will begin to supply current. During turnoff, a similar situation occurs. Although IA may instantaneously drop to zero, the discharge of CCB and CBE
through rbe will maintain a current flow through the collector. When the capacitances have been discharged, Vbe
will fall to zero and the current, gm . Vbe, will likewise
drop to zero. (This discussion assumes negligible leakage
currents). These capacitances therefore result in turn-on
and turn-off delays, and in rise and fall times for switching
applications just as found· in conventional bipolar switching transistors. And, just as with conventional switching,
the times are a function of drive. Figure 21 shows.the collector current (or drive) dependence of the turn-on delay
and rise times. As indicated the delay time is dependent on
the device only; whereas the rise-time is dependent on both
the device and the load.
If a high-intensity source, such as a xenon flash lamp,
is used for the optical drive, the device becomes optically
saturated unless large optical attenuation is placed between
source and detector. This can result in a significant storage
time during the turn off, especially in the floating-base
mode since stored charge has no direct path out of the
11-19
AN440
1000
30
'8
"E
700
,:;
Z
~ 500
U
f-
ff-
~
0
<:
300
:J
..
U
f:J
200
"
f:J
1 -I' 1 1 1
100
0.5
10
g
w
2.0
1.0
[c.
::!i
:t
"
7.0
3.0
VCC=10V
[
3.0
0.5
1.0
2.0
3.0
5.0
10
[C. COLLECTOR CURRENT (mAl
10
VCC-l0V
~ 7.0
o
j:
<:
5.0
.......
3.0
I'---,
~
f:J
"
10
5.0
" "-.....
<:
w
./
./
5.0
,,0
t
Z
0
7.0
COLLECTOR CURRENT (mAl
U
.
..
lO
0
VCC = 10 V
Cii
v
/V
<:
Z
w
.i!
V
z
(!l
a:
a:
20
w
a:
5.0
"u<:
,
m 3.0
aw
w
u.
w 2.0
2.0
(!l
~
<:
..
f-
E
o
~Crll~~
1.0
0.5
2.0
1.0
3.0
5.0
",
..J
>
10
IC' COLLECTOR CURRENT (mAl
~ 1·~.5
"
.....
--
1.0
to2.0
3.0
5.0
10
IC. COLLECTOR CURRENT (mAl
FIGURE 19 - 1 kHz h-Parameters versus Collector Currant for MRD300
---+
ib
ic
hie
b+
f
vb.
base region. However, if a non-saturating source, such as
a GaAs diode, is used for switching drive, the storage, or
turn-off delay time is quite low as shown in Figure 22.
-+-+C
t
h re vce
hoe
Saturation Voltage
ve•
An ideal switch has zero ON impedance, or an ON voltage drop of zero. The ON saturation voltage of the MRD300
is relatively low, approximately 0.2 volts. For a given collector current, the ON voltage is a function of drive, and is
shown in Figure 23.
(al Hybrid Modal
APPUCATIONS OF PHOTOTRANSISTORS
bo-----~~------~-4--~~~~--__oC
'.
(bl r-Perameter Model
FIGURE 20 - Low Frequency Analytical Models of Phototransistor
Without Photo Currant Generator
As mentioned previously, the phototransistor can be
used in a wide variety of applications. Figure 24 shows
two photo transistors in a series-shunt chopper circuit. As
Q\ is switched ON, Q2 is OFF, and when Q\ is switched
OFF, Q2 is driven ON.
Logic circuitry featuring the high input/output electrical
isolation of photo transistors is shown in Figure 25.
Figure 26 shows a linear application of the phototransistor. As mentioned previously, the linearity is obtained
for small-signal swings.
11-20
AN440
0
10
VCC-20V-
I-
9.0
5. 0
0
~
w
8.0
3. 0
2. 0
!w
:;
..J
I-- t--
r-I- r--
(!l
«
I-
"@ RL ~ 1 k!1.
o. 7
7.0
..J
0
-
>
6.0
II:
W
t- r-
Il-
5.0
IC= 5.0mA
iw
~@AL""100n
4.0
Ii:
1. 0
f:
oJ
'ii)
7. 0
1.0mA
0
.......
3.0
I-
~
O. 5
u
,
0.5 mA
W
..J
..J
2.0
0
\
U
.....
W
U
~@RL~100!1.-
>
or 1 kn
0.3
1.0
0
0.3
'I'-0.5
1.0
..........
r-
2.0
5.0
10
20
30
H.IRRADIANCE (mW/cm 2 )
0.2
FIGURE 23 - Collector Emitter Saturation VoltillQ8
as a Function of Irradiance for MRD300
0.1
0.3
0.5
0.7
1.0
2.0
3.0
IC. COLLECTOR CURRENT (rnA)
FIGURE 21 - Switching Delay and Rise Times for MRD300
°1
INPUT
5.0
....~--....--o OUTPUT
~--
VCC~20V-
3. a
2.0
'f
1.0
0.7
0.5
0.3
0.2
0.1
I -~
0.07
0.05
0.3
0.5
FIGURE 24 - Saries-Shunt Chopper Circuit Using MRD300
Phototransistors and GoAs Light Emitting Diodes (LEOs)
- --
0.7
APPENDIX I
ts
1.0
2.0
3.0
IC. COLLECTOR CURRENT (rnA)
FIGURE 22 - Switching Storago and Fall Times for MRD300
A double-pole, single-throw relay is shown in Figure 27.
In general, the photo transistor can be used in counting
circuitry, level indications, alarm circuits, tachometers, and
various process controls.
Conclusion
The phototransistor is a light-sensitive active device of
moderately high sensitivity and relatively high speed. Its
response is both a function of light intensity and wavelength, and behaves basically like a standard bipolar transistor with an externally controlled collector-base leakage
current.
Radiant energy covers a broad band of the electromagnetic spectrum. A relatively small segment of the band is
the spectrum of visible light. A portion of the electromagnetic spectrum including the range of visible light is shown
in Figure I-I.
The portion of radiant flux, or radiant energy emitted
per unit time, which is visible is referred to as luminous
flux. This distinction is due to the inability of the eye to
respond equally to like power levels of different visible
wavelengths. For example, if two light sources, one green
and one blue are both emitting like wattage, the eye will
perceive the green light as being much brighter than the
blue. Consequently, when speaking of visible light ofvarying color, the watt becomes a poor measure of brightness.
A more meaningful unit is the lumen. In order to obtain
a clear understanding of the lumen, two other definitions
are required.
The first of these is the standard source (Fig. 1-2). The
standard source, adopted by international agreement, con-
11-21
AN440
sists of a segment of fused thoria immersed in a chamber
of platinum. When the platinum is at its melting point.
the light emitted from the chamber approximates the radiation of a black body. The luminous flux emitted by the
source is dependent on the aperture and cone of radiation.
The cone of radiation is measured in terms of the solid
angle.
The concept of a solid angle comes from spherical geometry. If a point is enclosed by a spherical surface and a
set of radial lines define an area on the surface. the radial
lines also subtend a solid angle. This angle. w, is shown in
Figure 1-3. and is defined as
Vcc
HIGH ISOLATION OR GATE
A
Vcc
(1-1)
w=;2'
J
J
where A is the described area and r is the spherical radius.
If the area A is equal to r2. then the solid angle subtended is one unit solid angle or one steradian. which is
nothing more than the three-dimensional equivalent of a
radian.
With the standard source and unit solid angle established. the lumen can be defmed.
A lumen is the luminous flux emitted from a standard
source and included within one steradian.
Using the concept of the lumen. it is now possible to
define other terms of illumination.
A·B
Illuminance
HIGH ISOLATION AND GATE
If a differential amount of luminous flux. dF. is impinging on a differential area. dA. the illuminance. E. is given
by
FIGURE 25 - Logic Circuits Using the MR0300 and LEOs
E = '!£
(1-2)
dA'
,.....---1---0 +V
INFRARED
f
VISIBLE
ULTRAVIOLET
~
;~":"'i~
".rt
X-RAY
r'---:--I~A'---~;A1
GAMM~ RAY
~
I ":CJ
' - - -........- - - 0 -v
WAVELENGTH "IN NANOMETERS (MILLIMICRONS)
FIGURE 26 - Small Signal Linear Amplifier
Using MR0300 and LEOs
,.
~,--
FIGURE 1-1 - Portion of Electromagnetic Spectrum
Illuminance is most often expressed in lumens per square
foot. or foot-candles. If the illuminance is constant over
the area. (1-2) becomes
___
OU_TPUT
E= FlA.
INPUT
_______
(1-3)
Luminous Intensity
~~'~~
When the differential flux. dF. is emitted through a differential solid angle. dw. the luminous intensity. I. is given
by
_______
OU_T_PUT
dF
1= dw'
FIGURE 27 - OPST Relay Using MR0300s and LEOs
11-22
(1-4)
AN440
PRISM
A
MOLTEN
PLATINUM
INSULATION
FUSED
THORIA
FIGURE 1-3 - Solid Angle, w
FIGURE 1-2 - International Standard Source
Spectral Response: Sensitivity as a function of wavelength of incident energy. Usually normalized to
peak sensitivity.
Luminous intensity is most often expressed in lumens
per steradian or candela. If the luminous intensity is constant with respect to the angle of emission, (1-4) becomes:
I=~
w·
Constants
(1-5)
Planck's constant: h = 4.13 X 10- 15 eV-s.
q = 1.60 X 10- 19 coulomb.
If the wavelength of visible radiation is varied, but the
illumination is held constant, the radiative power in watts
will be found to vary. This again illustrates the poor quality
of the watt as a measure of illumination. A relation between
illumination and radiative power must then be specified at
a particular frequency. The point of specification has been
taken to be at a w;lvelength of 0.555 /lm, which is the peak
of spectral response of the human eye. At this wavelength,
I watt of radiative power is equivalent to 680 lumens.
electron charge:
velOCity of light:
lUumination Conversion Factors
Multiply
lumens/ft 2
lumens/ft 2•
candlepower
I
1.58 X 10-3
41T
To Obtain
ft. candles
mW/cm 2
lumens
BIBLIOGRAPHY AND REFERENCES
Luminous Flux: Radiant flux of wavelength within
the band of visible light.
Lumen: The luminous flux emitted from a standard
source and included within one steradian (solid angle
equivalent of a radian).
H,
Radiation Flux Density (lrradia~ce): The total incident radiation energy measured in power per unit
area (e.g., mW/cm 2).
E,
Luminous Flux Density (I1Iuminance): Radiation
flux density of wavelength within the band of visible
light. Measured in lumens/ft 2 or foot candles. At
the wavelength of peak response of the human eye.
0.555 /lm (0.555 X 1O-6m),"1 watt of radiative power
is equivalent to 680 lumens.
SR, Radiation Sensitivity: The ratio of photo-induced
current to incident radiant energy, the latter measured at the plane of the lens of the photo device.
SI,
By
*At 0.555 /lm.
APPENDIX II
OPTOELECTRONIC DEFINITIONS
F,
c = 3 X 108 m/s.
I1Iumination Sensitivity: The ratio of photo-induced
current to incident luminous energy, the latter measured at the plane of the lens of the photo device.
I. Fitchen, Franklin C., Transistor Circuit Analysis and
Design, D. Van Nostrand Company, Inc., Princeton
1962.
2. Hunter, Lloyd P., ed., Handbook of Semiconductor
Electronics, Sect 5., McGraw-Hill Book Co., Inc., New
York 1962.
3. Jordan, A.G. and A.G. Milnes, "Photoeffect on Diffused
PN Junctions with Integral Field Gradients", IRE Transactions on Electron Devices, October 1960.
4. Millman, Jacob, Vacuum-tube and Semiconductor Electronics, McGraw-Hill Book Co., Inc., New York 1958.
5. Sah, C.T., "Effect of Surface Recombination and Channel on PN Junction and Transistor Characteristics",
IRE Transactions on Electron Devices, January 1962.
6. Sears, F.W. and M.W. Zemansky, University Physics,
Addison-Wesley Publishing Co., Inc., Reading, Massachusetts 1962.
7. Shockley, William, Electrons and Holes in Semiconductors, D. Van Nostrand Company, Inc., Princeton
1955.
11-23
AN-50S
APPLICATIONS OF PHOTOTRANSISTORS
IN ELECTRO·OPTIC SYSTEMS
INTRODUCTION
A phototransistor is a device for controlling current
flow with light. Basically, any transistor will function as a
phototransistor if the chip is exposed to light, however,
certain design techniques are used to optimize the effect
in a photo transistor .
lust as phototransistors call for special design techniques, so do the circuits that use them. The circuit
designer must supplement his conventional circuit knowledge with the terminology and relationships of optics and
radiant energy. This note presents the information neces·
sary to supplement that knowledge. It contains a short
review of phototransistor theory and characteristics, followed by a detailed discussion of the subjects of irradiance,
illuminance, and optics and their significance to phototransistors. A distinction is made between low-frequency I
steady-state design and high-frequency design. The use of
the design information is then demonstrated with a series
of typical electro-optic systems.
In a phototransistor the actual carrier generation takes
place in the vicinity of the collector-base junction. As
shown in Figure 1 for an NPN device, the photo-generated
holes will gather in the base. In particular, a hole
generated in the base will remain there, while a hole
genera ted in the collector will be drawn into the base by
the strong field at the junction. The same process will
result in electrons tending to accumulate in the collector.
Charge will not really accumulate however, and will try to
evenly distribute throughout the bulk regions. Consequently, holes will diffuse across the base region in the
direction of the emitter junction. When they reach the
junction they will be injected into the emitter. This in
turn will cause the emitter to inject electrons into the
base. Since the emitter injection efficiency is much larger
than the base injection effeciency, each injected hole will
result in many injected electrons.
It is at this point that normal transistor action will
occur. The emitter injected electrons will travel across the
base and be drawn into the collector. There, they will
combine with the photo-induced electrons in the collector
to appear as the terminal collector current.
PHOTOTRANSISTOR THEORY·
Phototransistor operation is a result of the photo-effect
in solids, or more specifically, in semiconductors. Light of
a proper wavelength will generate hole-electron pairs
within the transistor, and an applied voltage will cause
these carriers to move, thus causing a current to flow. The
intensity of the applied light will determine the number of
carrier pairs generated, and thus the magnitude of the
resultant current flow.
Since the actual photogeneration of carriers occurs in
the collector base region, the larger the area of this region,
the more carriers are generated, thus, as Figure 2 shows,
the transistor is so designed to offer a large area to
impinging light.
h,v
\\
hv
v
RL
L--.-..JV\I\r-------lIII-------I
FIGURE 1 - Photo-Gener_ Carrier Movement
in 8 Phototransistor
1 For
a detailed discussion see Motorola Application Note
AN440, "Theory and Characteristics of Phototransistors."
FIGURE 2 - Typical Double-Diffused Phototransistor Structure
11-24
AN508
C
Cbe
Ceo
f
vbe
I
G
Cbe
1
E
FIGURE 3 - Floating Base Approximate Model of Phototransistor
PHOTOTRANSISTOR STATIC CHARACTERISTICS
A photo transistor can be either a two-lead or a
three-lead device. In the three-lead form, the base is made
electrically available, and the device may be used as a
standard bipolar transistor with or without the additional
capability of sensitivity to light. In the two-lead form the
base is not electrically available, and the transistor can
only be used with light as an input. In most applications,
the only drive to the transistor is light, and so the
two-lead version is the most prominent.
As a two-lead deVice, the photo transistor can be
modeled as shown in Figure 3. In this circuit, current
generator IX represents the photo generated current and
is approximately given by
IX =11FqA
In reality there is a thermally generated leakage
current, 10 , which shunts IX. Therefore, the terminal
current will be non-zero. This current, ICEO, is typically
on the order of 10 nA at room temperature and may in
most cases be neglected.
As a three lead device, the model of Figure 3 need only
have a resistance, rb', 'connected to the junction of Cbc
and Cbe. The other end of this resistance is the base
terminal. As mentioned earlier, the three lead phototransistor is less common than the two lead version. The only
advantages of having the base lead available are to stabilize
the device operation for Significant temperature excursions, or to use the base for unique circuit purposes.
Mention is often made of the ability to optimize a
photo transistor's sensitivity by using the base. The idea is
that the device can be electrically biased to a collector
current at which hFE is maximum. However, the introduction of any impedance into the base results in a net
decrease in photo sensitivity. This is similar to the effect
noticed when ICEO is measured for a transistor and found
to be greater than leER. The base-emitter resistor shunts
some current around the base-emitter junction, and the
shunted current is never multiplied by hFE.
Now when the photo transistor is biased to peak hFE,
the magnitude of base impedance is low enough to shunt
an appreciable amount of photo current around the
base-emitter. The result is actually a lower device sensitivity than found in the open base mode.
Spectral Response - As mentioned previously, a
transistor is sensitive to light of a proper wavelength_
Actually, response is found for a range of wavelengths.
Figure 4 shows the normalized response for a typical
phototransistor series (Motorola MRD devices) and indicates that peak response occurs at a wavelength of 0.8
J.LIIl. The warping in the response curve in the vicinity of
0.6 J.LIIl results from adjoining bands of constructive and
destructive interference in the Si0 2 layer covering the
transistor surface.
(I)
where
100
1/ ""'\
l
11 is the quantum efficiency or ratio of current carriers
to incident photons,
w
en
z
80
0
0-
en
F is the fraction of incident photons transmitted by
the crystal,
w
60
It
/'"
W
>
i=
40
«
q is the electronic charge, and
.J
w
It
A is the active area.
20
/
I
\
\
\
/
.;
0
0.4
The remaining elements should be recognized as the
component distribution in the hybrid-pi transistor model.
Note that the model of Figure 3 indicates that under dark
conditions, IX is zero and so Ybe is zero. This means that
the terminal current I '" ~ Vbe is also zero.
0.5
0.6
0.7
0.8
0.9
10., WAVELENGTH
1.0
\
1.1
(I'm)
FIGURE 4 - Constant Energy Spectral RIIIPonl8 for MRD
Phototransistor Series
11-25
1.2
AN508
1.0
II:
VCC
w>
I- lI- -
-
- >
::;;
w
I I
= 20 V
~p
1--
~ ~N5
U (1);1:
W
E
z
....
0.6
I- W,
j Q~
I- E
«6Ci
w«
0.4
....
/
I--
I I
SOU RCE TEMp.:: 2870 0 K
TUNGSTEN SOURCE
0.8
G
D
U
0.2
MiN
UII:
II:
(I)
0
III
~
0.1
0.5
0.2
1.0
5.0
2.0
10
20
H. RAOIATION FLUX DENSITY (mW/cm 2 )
FIGURE 6 - L_·Fraquoncy and Sl8ady-Stato Model
for Floating-8818 Phototransistor
AQURE 5 - Radiation Sensitivity for MRD80t
:i:
!W
:!
>
U
(I)
z
Z
::>
o
3;
II:
W
II:
W
W
aW
IL
>
m
j:
'""cD
"
t'
«oJ
W
II:
201-.L...J~-+"\-
1 .0 L-.L.J.:-'-'.-L.LJ..L.ll1,-l-L.LJ....L.J"'-.!..1lL-L...L.J...L.L.Ll..J.ilj
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
A. WAVELENGTH (I'm)
FIGURE 7 - 3 dB Frequency versus Load Resistance for MRD
FIGURE 8 - Spectral Response for Standard Observer and
MRDSari..
Phototransistor Series
Radiation Sensitivity - The absolute response of the
MRD901 photo transistor to impinging radiation is shown
in Figure 5. This response is standardized to a tungsten
source operating at a color temperature of 2870oK. As
sub sequent discussion will show, the transistor sensitivity
is qUite dependent on the source color temperature.
Additional static characteristics are discussed in detail
in AN440, and will not be repeated here.
WW-FREQUENCY AND STEADY-STATE DESIGN
APPROACHES
F or relatively simple circuit designs, the model of
Figure 3 can be replaced with that of Figure 6. The
justification for eliminating consideration of device
capacitance is based on restricting the phototransistor's
use to d.c. or low frequency applications. The actual
frequency range of validity is also a function of load
resistance. For example, Figure 7 shows a plot of the 3 dB
response frequency as a function of load resistance_
Assume a modulated light source is to drive the
phototransistor at a maximum frequency of 10kHz. If
the resultant photo current is 100 /JA, Figure 7 shows a
3-dB frequency of 10 kHz at a load resistance of 8
kilohms. Therefore, in this case, the model of Figure 6 can
be used with acceptable results for a load less than 8
1.2
0.5
RL. LOAD RESISTANCE (kU)
kilohms. For larger loads, the hybrid-pi model must be
used.
For the remainder of the discussion of low frequency
and steady state design, it is assumed that the simplified
model of Figure 6 is valid.
RADIATION AND ILLUMINATION SOURCES
a
The effect of a radiation source on photo-transistor is
dependent on the transistor spectral response and the
spectral distribution of energy from the source. When
discussing such energy, two related sets of terminology are
available. The first is radiometric which is a physical
system; the second is photometric which is a physiological
system.
The photometric system defines energy relative to its
visual effect. As an example, light from a standard 60
watt-bulb is certainly visible, and as such, has finite
photometric quantity, whereas radiant energy from a
6O-watt resistor is not visible and has zero photometric
quantity. Both items have fmite radiometric quantity.
The defming factor for the photometric system is the
spectral response curve of a standard observer. This is
shown in Figure 8 and is compared with the spectral
response of the MRD series. The defining spectral response of the radiometric system can be imagined as unit
response for all wavelengths.
11-26
AN508
A comparison of the terminology for the two systems
is given in Table I.
There exists a relationship between the radiometric and
photometric quantities such that at a wavelength of 0.55
11m, the wavelength of peak response for a standard
observer, one watt of radiant flux is equal to 680 lumens
of luminious flux. For a broadband of radiant flux, the
visually effective, or photometric flux is given by:
F = K f P(X)O (X)dX
r is the distance between the source and the detector.
Figure 9 depicts a point source radiating uniformly in
every direction. If equation (3) is satisfied, the detector
area, AD, can be approximated as a section of the area of
a sphere of radius r whose center is the point source.
The solid angle, w, in steradians 2 subtended by the
detector area is
(4)
(2a)
Since a sphere has a surface area of 411r2 , the total solid
angle of a sphere is
where
K is the proportionality constant (of 680 lumens/watt),
P (X) is the absolute spectral distribution of radiant
flux,
00) is the relative response of the standard observer,
and
4m 2
wS = - - = 411 steradians.
r2
Table II lists the design relationships for a point source
in terms of both radiometric and photometriC quantities.
The above discussion assumes that the photo detector is
alligned such that its surface area is tangent to the sphere
with the point source at its center. It is entirely possible
that the plane of the detector can be inclined from the
dX is the differential wavelength,
A similar integral can be used to convert incident
radiant flux density, or irradiance, to illuminance:
E=K
f
TABLE I - Radiometric and Photometric Terminology
H (X) O(X) dX
(2b)
In Equation(2b)if H (X) is given in watts/ cm2 , E will
be in lumens/ cm 2 . To obtain E in footcandles (lumens/ft2), the proportionality constant becomes
K = 6.3 x lOs footcandles/mW/cm 2
Fortunately, it is usually not necessary to perform the
above integrations. The photometric effect of a radiant
source can often be measured directly with a photometer.
Unfortunately, most photo transistors are speCified for
use with the radiometric system. Therefore, it is often
necessary to convert photometric source data, such as the
candle power rating of an incandescent lamp to radiometric
data. This will be discussed shortly.
Description
Radiometric
Photometric
Tota! Flux
Radiant Flux, P, in Watts
Luminous Flux, F, in
Lumens
Luminous Emittance, L.
Lumens/ft 2 (foot-
Emitted Flux
Density ala
Source Surface
In
lamberts),orlumensl
cm 2 (Lamberts)
Source Intensity
(Point Source)
Radiant Intensity, Ir •
i"Watts/Steradlan
Source Intensity
(Area Source)
Radiance, Br, in
(Watts/SteradIan) Icm 2
Luminous Intensity, 'l,
in Lumens/Steradian
(Candela)
Luminance, BL, In
(Lumens/Steradian) Ift 2
(footlambertl
Flux Density
Incident on a
Receiver Surface
Irradiance, H, in
Watts/cm 2
TABLE II - Point Source Relationships
Description
Radiometric
Photometric
GEOMETRIC CONSIDERA nONS
Point Source
Intensity
I r ,Wa1ts/Steradian
I L, Lumens/Steradian
In the design of electro-optic systems, the geometrical
relationships are of prime concern. A source will effectively appear as either a point source, or an area source,
depending upon the relationship between the size of the
source and the distance between the source and the
detector.
Point Sources - A point source is defined as one for
which the source diameter is less than ten percent of the
distance between the source and the detector, or,
Incident Flux
Density
"' sin ().
(22)
However, since the maximum value of sin ()' is one and
occurs when 9' is 90°, 9' will reach 90° before () does.
That is, for some value of 9, defined as the critical angle,
9C, rays from P do not cross the interface. When 9 >9C,
the rays are reflected entirely back into the lower
material, or total internal reflection occurs.
Figure 16 shows the application of this principle to
fiber optics. A glass fiber of refractive index n is clad with
a layer of glass of lower refractive index, n' . A ray of light
entering the end of the cable will be refracted as shown.
If, after refraction, it approaches the glass interface at an
angle greater than 9C, it will be reflected within the fiber.
Since the angle of reflection must equal the angle of
incidence, the ray will bounce down the fiber and emerge,
refracted, at the exit end.
The numerical aperature, NA, of a fiber is defmed as
the sin of the half angle of acceptance. Application of
Snell's law at the interface for eC, and again at the fiber
end will give
NA=sinl/l=~.
FIGURE 14 - Effective Use of External OptiCS with the MRD 300
n'
n
FIGURE 15 - Ray Refraction at an Interface
(23)
For total internal reflection to occur, a light ray must
enter the fiber within the half angle I/l.
Once a light ray is within the fiber, it will suffer some
attenuation. For glass fibers, an absorption rate of from
five to ten per cent per foot is typical. There is also an
entrance and exit loss at the ends of the fiber which
typically result in about a thirty per cent loss.
As an example, an illuminance E at the source end of a
three-foot fiber bundle would appear at the detector as
ED = 0.7 Ee-aL=O.7 Ee-(0.1)(3)=0.51 E,
FIGURE 16 - Refraction in an Opti••1 Fiber
(24)
where E is the illuminance at the source end,
ED is the illuminance at the detector end,
a is the absorption rate, and
L is the length.
This assumes an absorption loss of ten percent per foot.
TUNGSTEN LAMPS
Tungsten lamps are often used as radiation sources for
photodetectors. The radiant energy of these lamps is
distributed over a broad band of wavelengths. Since the
eye and the photo transistor exhibit different wavelengthdependent response characteristics, the effect of a tungsten lamp will be different for both. The spectral output
of a tungsten lamp is very much a function of color
temperature .
Color temperature of a lamp is the temperature
required by an ideal blackbody radiator to produce the
same visual effect as the lamp. At low color temperatures,
a tungsten lamp emits very little visible radiation. However, as color temperature is increased, the response shifts
toward the visible spectrum. Figure 17 shows the spectral
distribution of tungsten lamps as a function of color
temperature. The lamps are operated at constant wattage
and the response is normalized to the response at 28000 K.
For comparison, the spectral response for both the
standard observer and the MRD phototransistor series are
also plotted. Graphical integration of the product of the
standard observer response and the pertinent source
distribution from Figure 17 will provide a solution to
equations (2a) and (2b).
Effective Irradiance - Although the sensitivity of a
photodetector to an iIIuminant source is frequently
provided, the sensitivity to an irradiant source is more
common. Thus, it is advisable to carry out design work in
11-30
AN508
1.0
OOOK
.1
A 1\/ N r--.,
,,'2400 o K
I 1/\
STD
OB~
0.8
2oooo~h
><:'0 16000K
I \ /
r'--., K" ~
II \/ /
v -=::::: ~
U )
.......
J
V V
V
'J / /
v
'/
V
V \
I~~
__
MRD
~
0
0.6
0.
;
a:
~
0.4
.~
;;
a:
Again, such an integration is best evaluated graphically.
In terms of flux density, the integral is
0.2
~If
o
0.2
'\
0.4
0.6
HE =
1.0
1.2
1.4
1.6
1.8
2.0 2.2
Wavelength (#lm)
FIGUIIIE 17 - Fladiant Spectral Distribution of Tunsten Lamp
40
l
0
30
.~
0:
/
.~
;
Ii:w
20
'0
L
~
w
10
o
V
HE = 0.14 (20) = 2.8 mW/cm'
V
---
:I:
t-
1600
2000
2400
2800
3200
3600
0.08
1\
~0
0.06
JE
\
0.04
.!!
;::
HE =(5.0X.185) =0.925 mW/cm'
['\
........
~
w
0.02
r--....
:I:
o
2000
2200
--
2400
(28)
By using this value of HE and the typical sensitivity
rating it can be shown that the device sensitivity to a
monochromatic irradiance at the MRD901 .peak response
ofO.8!ill\is
'\.
E
(27)
0
FIGUFIE 18 - MFID Irradiance Flatlo versus Color Temperature
"
(26)
The specifications for the MRD photo transistor series
include the correction for effective irradiance. For
example, the MRD901 is rated for a typical sensitivity of
0.8 mA/mW /cm2 • This specification is made with a
tungsten source operating at 2870 K and providing an
irradiance at the transistor of 5.0 mW/cm'. Note that this
will result in a current flow of 4.0 rnA.
However, from Figure 18, the effective irradiance is
CT, Color Temperature (OK) (Tungsten Lamp Only)
J!
<
H (A) Y (A) dA
where HE is the effective flux density (irradiance) on
the detector
and H (A) is the absolute flux density distribution of
the source on the detector.
Graphical integration of equations (2b) and (26) has
been performed for the MRD series of phototransistors
for several values of lamp color temperature. The results
are given in Figures 18 and 19 in terms of ratios. Figure
18 provides the irradiance ratio, HE/H versus color
temperature. As the curve shows, a tungsten lamp
operating at 26000 K is about 14% effective on the MRD
series devices. That is, if the broadband irradiance of such
a lamp is measured at the detector and found to be 20
mw/em' , the transistor will effectively see
\
0.8
f
S = ~ = 4.0 rnA
l - t-
2600
HE
2800
= 4.33 mA/mW/cm'
(29)
Now, as shown previously, an irradiance of 20
mW /em' at a color temperature of 26000 K looks like
monochromatic irradiance at 0.8!ill\ of 2.8 mW/cm2
(Equation 27). Therefore, the resultant current flow is
3000
CT, Color Temperature (OK) (TUNGSTEN Lamps On IV)
FIGURE 19 - MFID Irradiance/Illuminance Flatio venus Color
Temperature
terms of irradiance. However, since the spectral response
of a source and a detector are, in general, not the same, a
response integration must still be performed. The integral
is similar to that for photometric evaluation.
PE = f Po..) y 0..) dA
0.925 mW/cm 2
1= SHE (4.33)(2.8) = 12.2 rnA
(30)
An alternate approach is provided by Figure 20. In this
figure, the relative response as a function of color
temperature has been plotted. As the curve shows, the
response is down to 83% at a color temperature of
2600o K. The specified typical response for the MRD450
at 20mW /em' for a 28700 K tungsten source is 0.9
mA/mW/cm'. The current flow at 2600 0 K and 20
mW/cm2 is therefore
(25)
where
PE is the effective radiant flux on the detector, peA) is
the spectral distribution of source flux
and
1= (0.83)(0.9)(20) = 14.9 rnA
Yo..) is the spectral response of the detector.
11-31
(31)
AN508
Geometric Considerations ~ The candlepower ratings
on most lamps are obtained from measuring the total
lamp output in an integrating sphere and dividing by the
unit solid angle. Thus the rating is an average, or
mean·spherical-candlepower. However, a tungsten lamp
cannot radiate uniformly in all directions, therefore, the
candlepower varies with the lamp orientation. Figure 23
shows the radiation pattern for a typical frosted tungsten
lamp. As shown, the maximum radiation occurs in the
horizontal direction for a base-down or base-up lamp. The
circular curve simulates the output of a uniform radiator,
and contains the same area as the lamp polar plot. It
indicates that the lamp horizontal output is about 1.33
This value agrees reasonably well with the result
obtained in Equation 30. Similarly, Figure 19 will show
that a current flow of 6.67 rnA will result from an
illuminance of 125 foot candles at a color temperature of
2600o K.
Detennination of Color Temperature ~ It is very likely
that a circuit designer will not have the capability to
measure color temperature. However, with a voltage
measuring capability, a reasonable approximation of color
temperature may be obtained. Figure 21 shows the
classical variation of lamp current, candlepower and
lifetime for a tungsten lamp as a function of applied
voltage. Figure 22 shows the variation of color temperature as a function of the ratio
p=
- f----f---- -
100
MSCP
WATT
(32)
80
where
~
MSCP is the mean spherical candlepower at the lamp
operating point and WATTis the lamp IV product
at the operating point.
As an example, suppose a type 47 indicator lamp is
used as a source for a phototransistor. To extend the
lifetime, the lamp is operated at 80% of rated voltage.
MSCP
Lamp Rated Volts Rated Current
47
6.3V
150mA
a
60
~
..
a:
>
..
a:
40
20
2500
2600
2700
FIGURE 20 - Relative Response of MRD Series versus Color
Temperature
0.52 approx
300
275
I I
dand,~pol/ /
1000
250
225
/
Life
200
175
150
1.0
100
75
~
c
.. e
U·
1:8
..·· .
50
u ~
c
25
u
~
o
•
..
60
,/"
/'
70
0.1
90
100
110
120
130
Percent of Rated Voltage
FIGURE 21 - Tungsten Lamp Parameter Variations versus
Variations about Rated Voltage
~c:
u c
• u
.
.!
,
:it
::;
140
3200
~
2800
E
2600
1l
~
f-
a
(;
U
0.26
3000
e
il
=0.65 =0.4,
2400
2200
=2300o K,
11-32
,/
/"
,./
---
----
--
2000
1800
From Figure 22, for p = 0.4,
CT
,
......
m
u
..........
e
, '200
"me
- .,.
M
}u.
100
100
10k
1.0k
'rimif
1M
lOOk
AL. Load Resistance (Ohms)
FIGURE 33 - 3dB Frequency Response for Speed-up Circuit
u.
,!;
~
.~
I
(J
~
E
w
i
80
70
MRO 300
30
20
10
o
-6
·5
-3
-2
--
V
I
Ip=1.5mA
/
40
(J
5.0
7
50
"'w
m
I
60
~
E
j::
/
2.0
tf
:c'"
e
.~
~
p::::::= ~tr
1.0
If)
o
-1
~-
2
VSE. Base-Emitter, Voltage (Volts)
0.5
0.1
FIGURE 3D - MRD3DD B...... Emitter Junction
Capacitance versus Voltage
0.2
0.5
1.0
2.0
5.0
10
R L. Load Aesistance (kn)
FIGURE 34 - Switching Tim .. with Speed-up Circuit
100
~lp-l.5mA
en
HIGH FREQUENCY DESIGN APPROACHES
50
3
E
20
e
10
.
j::
:c
.~
/
It was shown in Figure 7 that the frequency response
of the MRD phototransistor series is quite dependent on
the load. Depending on the load value and the frequency
of operation, the device can be modled simply as in Figure
6, or else in the modified hybrid-pi form of Figure 3.
While the hybrid-pi model may be useful for detailed
analytical work, it does not offer much for the case of
simplified design. It is much easier to consider the
transistor simply as a current source with a frrst-order
transient response. With the addition of switching characteristics to the device information already available, most
design problems can be solved with a minimum of effort.
b~
5.0
If)
tf
~.
2.0
V
1.0
0.1
c:::-+:: V
f..-
0.2
tr
I
0.5
1.0
2.0
5.0
10
R L. Load Res'stance (kSl)
FIGURE 31 - MRD300 Switching Times v....... Load Resistan..
11-36
AN508
Switching Characteristics - When the photo transistor
changes state from OFF to ON, a significant time delay is
associated with the rbe Cbe time constant. As shown in
Figure 30, the capacitance of the emitter-base junction is
appreciable_ Since the device photocurrent is gm VIle
(from Figure 3), the load current can change state only as
fast as VIle can change_ Also, VIle can change only as fast as
Cbe can charge and discharge through the load resistance_
Figure 31 shows the variations in rise and fall time
with load resistance_ This measurement was made using a
GaAs light emitting diode for the light source_ The LED
output power and the separation distance between the LED
and the phototransistor were adjusted for an ON phototransistor current of 1.5 rnA. The rise time was also measured for a short-circuited load and found to be about 700 ns.
The major difficulty encountered in high-frequency
applications is the load-dependent frequency response.
Since the photo transistor is a current source, it is desirable
to use a large load resistance to develop maximum output
voltage. However, large load resistances limit the useful
frequency range. This seems to present the designer with a
tradeoff between voltage and speed. However, there is a
technique available to eliminate the need for such a
tradeoff.
Figure 32 shows a circuit designed to optimize both
speed and output voltage. The common-base stage Q2
offers a lOW-impedance load to the phototransistor, thus
maximizing response speed. Since Q2 has near-unity
current gain, the load current in RL is approximately
equal to the phototransistor current. Thus the impedance
transformatiort provided by Q2 results in a relatively loadindependent frequency response.
The effect of Q2 is shown in Figures 33 and 34. In
Figure 33, the 3-dB frequency response as a function of
load is shown. Comparing this with Figure 7, the effect of
Q2 is quite evident. Comparison of Figures 31 and 34 also
demonstrates the effect of Q2.
synchronizing wires between the two flash units.
The MRD300 phototransistor used in this circuit is cut
off in a VCER mode due to the relatively low dc
resistance of rf choke L1 even under high ambient light
conditions. When a fast-rising pulse of light strikes the
base region of this device, however, Ll acts as a very high
impedance to the ramp and the transistor is biased into
conduction by the incoming pulse of light.
When the MRD300 conducts, a signal is applied to the
gate of SCR Q2. This triggers Q2, which acts as a
solid-state relay and turns on the attached strobeflash
unit.
In tests this unit was unaffected by ambient light
conditions. It fired up to approximately 20 feet from
strobe-light flashes using only the lens of the MRD300 for
light pickup.
CONCLUSION
The phototransistor provides the circuit or system
designer with a unique component for use in dc and linear
or digital· time-varying applications. Use of a phototransistor yields extremely high electrical and mechanical
isolation. The proper design of an electro-optical system
requires a knowledge of both the radiation source
characteristics and the phototransistor characteristics.
This knowledge, coupled with an adequately defined
distance and geometric relationship, enables the designer
to properly predict the performance of his designs.
REFERENCES
L Motorola Application Note AN-440, Theory and
Characteristics ofPhototranmstors.
2. Francis W. Sears, Optics, Addison-Wesley Publishing
Company, Inc., 1948.
3. IES Lighting Handbook, 3rd Edition, Illuminating
Engineering SOCiety, 1959.
Remote Strobeflash Slave Adapter - At times when
using an electronic strobe flash, it is desirable to use a
remote, or "slave" flash synchronized with the master.
The circuit in Figure 35 provides the drive needed to
trigger a slave unit, and eliminates the necessity for
9-25
v
IIIII--~---o
100mH
INPUT TO STROBE
FLASH UNIT
RFC
RI
1.2k
02
2N4216
+
FIGURE 35 - St,oboflalh Slave Adapte'
11-37
MOTOROLA
SEMICONDUCTOR
APPLICATION NOTE
AN561
How to Use Photosensors and Light Sources
Prepared by: John Bliss
Discrete Applications Engineering
ABSTRACT
3000
One way to build a light-sensing system is to fish a few
components out of a junk box, throw them together and '1ire
up" the system. The minute it "works," the "deSign" is frozen
and the prototype is ready.
While minimizing engineering, this approach is sure to
maximize potential problems. You can expect field failures
and the general tendency of the system to fail whenever the
environment deviates from the laboratory conditions that
existed during the design phase.
A reliable light-sensing system can be built without much
more effort than the haphazard junk-box method. But it calls
for step-by-step design. Let's examine the designs for two
such systems, one for senSing incandescent light and the
other for sensing light from a LED.
LLi
2600
........1--,/
::;;
~
2400
9
2200
8
/
/
0
0.2 0.4
1
w.5.
~
60
!5w tc~
0
ffia:
E
~ ~
a:
~
8
1.2
/'
V
1.4 1.6
-
jr
0
02300 2400 2500 2600 2700 2600 2900
COLOR TEMPERATURE, K
N
5
VCC=20V
SOURCE TEMP = 2870 K
TUNGSTEN SOURCE
~ 1.0
• What are the source conditions?
• What are the effects of a nonstandard source on the light
sensor?
~ lO.8
~o; ~
It turns out that answers to both of these questions can be
obtained with sufficient accuracy.
Suppose a type 47 lamp is to be used as a light source with
an MRD300 silicon phototransistor as a product counter on an
assembly line. The lamp is to be operated at rated voltage,
6.3 V at 0.15 A, so its optical output is 0.52 mean spherical
candlepower (mscp). This yields the following mean spherical
candlepower per watt:
0.6
H-H+HI-t+J;J..-oA++
::l~
IIIII
11111
u... -
TYP
~
(,) z 0.4 I""'I-+H-t-'H+Ht-+-t-H--t-t-t+ttt--+-1
@~
~ 15 0.2
1-+-tl-~1ttHt=~~~+T~~rl
~ ~0~~~~~1~~~~~~~~~1~~~·~~1r-~
f";'\
\::..J
(1)
From Fig. 1a, a plot of color temperature versus mscpIWfor
small incandescent sources, we see that the color temperature corresponding to this light output is 2400 K. This is several
hundred degrees below the value at which the sensitivity olthe
MRD300 is specified. From Fig. 1b, a plot of relative response
of MRD phototransistors versus color temperature, we note
that the sensitivity is 68% of the value at 2870 K.
~ ~
0
0.6 0.8 1.0
p, mscpIW
....- V
"':. ~ 100
The trouble with most designs is that data sheets for phototransistors and photodiodes usually give photocurrent or
sensitivity at some irradiance level from a source operating at
a particular color temperature. This information is extremely
meaningful if a designer uses a tungsten source at the specified color temperature and irradiance level. However, what if
the source conditions are different? Or, for that matter, how
does one determine source conditions?
With an optical pyrometer and a thermopile at hand, the
designer can quickly determine the source conditions. But
these instruments are generally not available in most laboratories. Thus most designers are faced with these problems:
=0.521[(6.3) (0.15)] =0.55 mscplW.
2800
~
w
0..
Sense Incandescent Light Reliability
p
a:
::>
0.1
0.2
0.5 1.0 2.0
5.0
10 20
H, RADIATION FWX DENSITY
(mW/cm2)
1. To predict light·sensing system perionnance, an incandescent source
description is obtained from curve "a". Once this is done, the phototransistor
relative response is obtained from "b". After calculating the radiation flux intansity, H, on the basis of data from "a" and "b", you can read the actual phototransistor radiation sensitivity from "rI'.
11-38
AN561
Next, the irradiance level must be determined. While the
efficiency of incandescent lamps in terms of visible light is
quite low - 5 to 20% - the efficiency in terms of total radiated
energy is high - about 90%. Since an MRD300 detects a
large amount of this energy, the total radiated power for the 47
lamp is
Pr = (0.9) (6.3) (0.15) = 850 mW.
(2)
If the lamp is assumed to be a uniform point source, the
source intenSity is
I
=Pr/41t =67.7 mW/steradian.
(3)
If we assume that the distance between the lamp and transistor is 20 cm, the incident irradiance is
H I/d2 67.7/(20)2 0.17 mW/cm2 .
(4)
=
=
=
The radiation sensitivity of the MRD300 as a function of
irradiance (or incident flux density) for a tungsten source at
2870 K is shown in Figure 1c. Since our source color temperature is 2400 K - and thus the transistor sensitivity, from Fig.
lb, is reduced to 68% - the actual incident irradiance, H',
becomes
H' = (O.68)H = (0.68) (0.17)
(5)
0.115 mW/cm 2 ,
so that, directly from Figure lc, the effective minimum radiation sensitivity is 0.06 mAlmW/cm2 .
Thus the expected photocurrent is given by
=
IC = (0.115)(0.06) = 6.9 !lA.
(6)
If the calculated photocurrent is too low for reliable circuit
performance, and if the lamp voltage and the source-to-transistor distance are fixed, a pair of lenses can be added to
increase the effective irradiance (Figure 2). Here lens 1
collects the lamp light output, and lens 2 converts the light
beam to parallel rays since the built-in lens of the MRD300
works best on a beam of light comprised of parallel
rays.
If the radius of lens 2 is the same as that of the MRD300
lens, then the net increase in irradiance (neglecting a small
lens loss) will be a function of the square of the ratio of the
radius of lens 1 and the radius of the MRD300 lens - nominally 0.075 inch.
Ifrl = 0.5 inch, then the previously computed irradiance (Eq. 5)
increases to
H' = (0.115)(0.5/0.75)2 = 5.1 mW/cm 2 .
(9)
Empirically losses caused by lens imperfections and
misalignment average about 10% per lens. Thus the actual
irradiance at the MRD300 is
H' = (5.1)(0.81) = 4.45 mW/cm2 .
(10)
From Figure lc, the radiation sensitivity, SRCEO, is 0.2 mAl
mW/cm 2 , so that the photocurrent is
=
=
IC (0.2) (4.14) 828 !lA,
(11)
indicating that the gain of the two-lens system is about 120.
For more current, add an amplitler
Since the system is intended for assembly-line operation, a
high-noise-immunity logic counter is needed to count the
phototransistor pulses (Figure 3). The input termination of the
MC672 that meets the noise requirements must sink up to
1.2 mA, or the output of the phototransistor given in Eq. 11
must be increased by about 50%. While such an increase can
be obtained by raising the lamp voltage, the lamp life inversely proportional to the cube of the lamp voltage - will be
reduced. Thus a gain stage between the phototransistor and
the counter should be added (Figure 3).
15V
COUNTED
OBJECTS
I
•
o
1/4 MC 672
8
~-:. '--,.~--{
~§E§I]S2
~
MO!!J=
LENS 1
3. To meet the input-current requirements of an IC coun!ef, a commonemitter amplifier is used to amplify the phototransistof current.
2. PIIotncurrent can be Increased by coHecting more light from the source.
The radius of lens 2 is equal to the radius of the lens bum into the photo·
transistor.
(7)
With the gain stage in, a noise current, In, in the phototransistor due to background lighting must be inhibited from
introducing wrong counts.
To this end, the voltage across Rl at the time an object
blocks the light to the MRD300 is
(8)
VRI (Rl) (In + ICBO),
(12)
where ICBO is the worst-case base leakage current for the
MPS6512 (0.05!lA at 25°C).
The light flux density at lens 2 is a function of the total light
collected by lens 1 and the area of lens 2 - that is, if HI is the
irradiance at lens 1 (area = 1trI2), then
=
P Hl1trI2,
and the irradiance at lens 2, H2, becomes
H2 = P/1tr22 = HI (rllr2)2.
11-39
=
AN561
TokeeptheamplifiertransistorsafelyOFF,theVR1 mustbe
held below 0.2 V, and the value of R1 can be computed from
R1
=(0.2)/(ln + ICSO).
(13)
This R1 value is for 25°C operation. To provide for higher
temperature environment, R1 might be reduced by a factor of
4. The noise current, In, required for determining R1 should be
measured, since it depends on the system layout.
To determine the circuit ON requirements, consider the
conditions when the light path is unblocked and the phototransistor current is 0.828 mA.
The base-emitter olthe MPS6512 will clamp the voltage
across R1 to about 0.7 V, so that
IR1
=(0.7)/(R1).
9/2
9~
~ -.-.
..J_J...-d
LED
/
(14)
2.0
--_
1.6
=(2.2 mA)/(0.828 mA -IR1)
= (2.2 mA)1[0.828 - (0.7/R1)].
V
~
8
0.4
0
2.0 5.0 10 20 50 100 200 500 lK 2K
If; INSTANTANEOUS FORWARD CURRENT, rnA
(16)
(17)
(18)
And since the minimum specified hFE of the MPS6512 is
50, the hFE in Eq. 16 must always be less than 50 for saturated
switching of the MPS6512. Also, note that the maximum
permissible value of the noise current, In, in Eq. 13 can be
determined from Eq. 18, which expresses hFE in terms of R1.
Sense light from a solid-stale source
If a GaAs light-emitting diode (LED) is used as a source,
color temperature becomes meaningless: The LED output is
essentially monochromatic. Thus determiriing the induced
photocurrent becomes a problem in geometry.
Assuming the LED to be a pOint source with a divergence
angle 0, we find that the area irradiated by the LED at a
distance d will be as in Figure 4, and the divergence half angle
is
tan (0/2) = rId,
so that
(19)
PTIA = 4PT/ltd2 02 .
1'"~
0.3
-75 -SO -25
0 25 50
75 100 150
:;:
JUNCTION TEMPERATURE, °C
E
5
t=
::>
0
0:
~
~
i5
~
20
101=
5.0
TJ=25°C
2.0
1.0
0.5
0.2
0.1
0.05
0..
If; INSTANTANEOUS FORWARD CURRENT, rnA
(22)
If the total output power, PT, of the LED is assumed to
irradiate the area A, the surface irradiance is
H=
r-....
.(21)
The irradiated area thus becomes
A =ltr =ltd 202/4·
J"o."
~
=
r d tan (0/2),
(20)
or, since for small angles the tangent is approximately equal to
the
r '" d (0/2).
I
I
--4._1
Tj = 25°C
1.2
= (2.2 mA)lIs
\
r \
(15)
The collector current of the amplifier transistor will be the
1.2 mA required to drive the counter, plus the steady-state
current through R2, chosen to be 1 mA. Since the total
collector current is 2.2 mA maximum, the minimum hFE of the
amplifier transistor must be
hFE(min)
I
4. Area imldiated by a light·emitting diode (LED) can be computed
from Ihis skelch.
The MPS6512 base current will be
IS = 0.828 mA - IR1.
-lVA
~-::::'--T-----+~-""&-;£.
\
(23)
Using Eq. 23 as an expression for irradiance, we can
develop a procedure for determining photocurrent. Suppose a
GaAs LED is used as the transmitter in an optically coupled
switch, while an MRD300 is used as the receiver. The LED is
driven by 500 mA, 5/is pulses, and it is one centimeter away
from the detector.
11-40
5. In predicting a phololransislor response to a LED, first deiennine the
inslan1aneous power dissipation of 1I1e LED from 'a", which is needed for
calculaling the corresponding junction lemperalure. WiIh 1I1ese dala, you can
determine 1I1e LED's power output by using CUN8S 'b" and 'c" and a lew
simple calculations.
To determine the incident irradiance at the phototransistor,
the LED power output must be determined first. Since it is a
function of the average LED junction temperature, the junction
temperature must also be computed.
AN561
Referring to Figure 5a, we see that the forward voltage VF,
across the LED at the current of 500 mA is about 1.45 V. If the
worst-case duty cycle, D, is 10% and the ambient temperature, TA, 25°C, the average junction temperature is
(24)
TJ(av) = TA + BJAVFIFD,
where the junction-to-ambient thermal resistance, BJA, is
given in the data sheet as 500 cm maximum. Thus the
average junction temperature is
= 25 + (500) (1.45) (0.5) (0.1)
= 61.3°C.
(26)
Since the values in Figure 5c are typical, the minimum
value (about 30% of typical) is a more realistic figure, so that
PT
=(3.12)(0.3) =0.94 mW.
(27)
From Figure 6, the divergence angle for the MLED930 is
about 30°, or 0.523 rad. Thus the incident irradiance at the
phototransistor is from Eq. 23,
H = (4)(0.94)/[(n)(0.523)2(1 cm)2]
= 4.4 mW/cm2 .
(28)
To determine the phototransistor response to the LED,
consider Figure 1c once more. Here the specified sensitivity of
the transistor is given for a tungsten source at 2870°C. The
radiation ofthis source is about 25% effective on the transistor,
while the LED's 900o-A output is 90% effective. Thus the transistor sensitivity to the LED, S'RCEO, is
S'RCEO,
=SRCEO (0.9)/(0.25) =3.6SRCEO.
(32)
IC = 2.23 mA (minimum).
(25)
As in Figure 5b, the LED's output power is down at this junction temperature to about 65% of its value at 25°C, or 4.8 mW
(Figure 5c). Thus the actual power output is
PT = (4.8) (0.65) = 3.12 mW.
There are two sources of error in the calculation. One is due
to the small-angle approximation (Eq. 21) that introduces an
error of about 10%. The other is due to the small separation
distance between the LED and the transistor (1 cm), resulting
in the nonparallel rays at the transistor surface. Thus the
photocurrentvalue calculated in Eq. 31 should be reduced by
about 30%, or
Compensate for temperature changes
Phototransistor temperature problems, while similar to
those of other semiconductors, are further aggravated by their
typically low output currents. For example, consider the
application of the accepted approximation of leakage current
doubling for every 10°C rise in temperature to the MRD3oo.
At 25°C, maximum ICEO is 100 nA. At 85°C, this becomes
abut 6.5 1lA. If the induced photocurrent is close to this value
(as in the first example, Eq. 6), then the system might not be
able to distinguish between the signal and no-signal conditons. Furthermore hFE of the phototransistor also increases
with temperature.
If the phototransistor is a three-lead device - that is it has
the classical
an electrical connection to its base bias-stabilization circuit for a common-emitter transistor
amplifier can be used, (Figure 7a). Its performance
characteristics are somewhat different in the case of a
phototransistor.
+V
(29)
The minimum sensitivity of the MRD300 at the available
irradiance (from a tungsten source) is about 0.2 mAlmW/cm2.
Thus the sensitivity to the LED is
S'RCEO = (3.6) (0.2)
= 0.72 ma/mW/cm2,
inducing the photocurrent of
(30)
IC = (0.72) (4.4) = 3.17 mAo
(31)
Rt = RaRI)I(Ra + Rill
Et = RbV/(Ra + Rill
Re
Eout
7. Temperature-compensation methods for a1hree-lead phototransistor are
quite similar to a classical bias-stabilization approach (a). In 1he case of a two
lead device, a matched pair of phototransistors can be used, one to receive
the normal light input, while the other is masked (b).
6. Divergence angle of a LED output is read direcUy from its radiation pattem,
which is usually a part of manufacturers' data.
11-41
AN561
The collector current is given by
IC = {hFE(E1 - EoAR1 + (1 + hFE)Re])
+ {ICEO(R1 + Re)I[Rl + (1 + hFE)Re])
where EO = VBE = 0.7 V.
(33)
A--_._-'--o Eout
5ince ICEO = (1 + hFE) ICO, Eq. 33 becomes
IC = {hFE(El - 0.7)I[Rl + (1 + hFE)Re])
+ {ICO(Rl + Re) (1 + hFE)I[Rl + (1 + hFE)Re]).
(34)
The two stability factors, 51 and 52, are
-v
51 = dlddl co , 52 = dlddhFE.
(35)
5ince the phototransistor cannot distinguish between lco
and the collector-base photocurrent, 51 should be maximized,
but the hFE variation should be reduced by minimizing 52.
Thus the ratio 51/52 should be maximized, or, omitting the
arithmetic,
51/52 = (1 + hFE) [Rl + (1 + hFE)ReV
[(El-0.7) + IcoRl).
(36)
The examination of Eq. 36 suggests maximizing Rl and Re
to maximize the ratio. Indeed, the effect of increasing Rl will
be more pronounced in the numerator, as desired. Furthermore larger R 1 results in better sensitivity. Maximizing Re
helps increase the output voltage.
In the case of a phototransistor without an electrical
connection to the base (such as the MRD300, the circuit in
Figure 7b can be used to compensate for temperature variations. Here two matched phototransistors are used, one to do
the normal light sensing, while the other is kept in the dark all
the time. Under zero-signal conditions both transistors pass
ICEO and no current flows through the load resistor, RL, so that
the output remains at zero. When a light signal is applied,
photocurrent flows through Ql and RL, thus developing the
desired output. The two matched transistors can also be operated as a differential pair, and the thermal effects will be nulled
as will all other common-mode Signals.
Because of the large collector-base capacitance (which, in
turn, is due to the large active area of the base), phototransistors generally have a limited frequency response. Furthermore the response depends on the load resistance. "the load
is in the emitter circuit, the RL is reflected into the base circuit
as (1 + hFE)RL. The time constant for this case is
t = (1 + hFE) RLCCB,
where CCB is the collector-base capacitance.
'--------oEout
(37)
As the load resistance is increased to raise the output
voltage, the time constant also increases, and the frequency
response falls off rapidly (Figure 8).
11-42
0)500
!Jj;g
200
100
~~ 50
ffiifi 20
::;~ 100
~fE 5.0
WITH COMMON BASE STAGE IC = ~ ~
.l
r- r-
t'-..
I
WITHOUT
,
r--r- -
2.0
1.0
100 200 500 1k 2k 5k 10k 20k 50k lOOk
"
500k
Rl., LOAD RESISTANCE, OHMS
8. Improved frequency response of a phololransislor is obtained with a
c:ommon-base Ioad-impedance transforming network (a) in either the coIIecIor
or emitter circuit. The degree of Ihe improvemenl is shown in "b'.
" the load resistor is in the collector circuit, an equivalent
voltage gain, AV, becomes proportional to RL. The Miller
capacitance at the input is thus
Cin= CcsAv,
so that here again raising RL results in decreased frequency
response.
High-load resistance andan improved frequency response
can be obtained with a simple impedance-transforming
network (Figure 8). Note that the frequency response for one
of such networks in Figure 8 remains flat for RL to 50 kn.
AN·571A
ISOLATION TECHNIQUES USING
OPTICAL COUPLERS
Prepared by
Francis Christian
INTRODUCTION
The optical coupler is a new device that offers the
design engineer new freedoms in designing circuits and
systems. Problems such as ground loop isolation, common
mode noise rejection, power supply transformations, and
many more problems can be solved or simplified with the
use of an optical coupler.
Operation is based on the principle of detecting emitted light. The input to the coupler is connected to a light
emitter and the output is a photodetector, the two elements being separated by a transparent insulator and housed
in a light-excluding package. There are many types of
optical couplers; for example, the light source could be
an incandescent lamp or a light emitting diode (LED).
Also, the detector could be photovoltaic cell, photoconductive cell, photodiode, phototransistor, or a light-sensitive SCR. By various combinations of emitters and detectors, a number of different types of optical couplers could
be assembled.
Once an emitter and detector have been assembled as
a coupler, the optical portion is permanently established
so that device use is only electronic in nature. This eliminates the need for the circuit designer to have knowledge
of optics. However, for effective application, he must
know something of the electrical characteristics, capabilities, and limitations, of the emitter and detector.
VIN-VF
R=-·--IF '
VF = diode forward voltage
IF = diode forward current
where
~
(;
2.0
~
1.8
>
I I ~I
I--TJ"" 2SoC
(;
>
'0
~
1.6
(;
"-
,
III
1.4
~
:l
~
1.2
1;;
.!:
u:.
>
1.0
1.0
2.0
5.0
-
10
20
~
1/
V
50
100
200
500 1000
iF, Instantaneous Forward Current (mA)
FIGURE 1 - Input Diode Forward Characteristic
COUPLER CHARACTERISTICS
The 4N25 is an optical coupler consisting of a gallium
arsenide (GaAs) LED and a silicon phototransistor. (For
more information on LEOs and phototransistors, see
References I and 2).
The coupler's characteristics are given in the following
sequence: LED characteristics, phototransistor characteristics, coupled characteristics, and switching characteristics.
Table I shows all four for the 4N25 series.
INPUT
For most applications the basic LED parameters IF and
VF are all that are needed to define the input. Figure I
shows these forward characteristics, providing the necessary information to design the LED drive circuit. Most
circuit applications will require a current limiting resistor
in series with the LED input. The circuit in Figure 2 is a
typical drive circuit.
The current limiting resistor can be calculated from
the following equation:
FIGURE 2 - Simple Drive Circuit For An LED
11-43
AN571A
TABLE I
LED CHARACTERISTICS IT A" 25°C unless otherwise noted}
Symbol
Min
*Reverse Leakage Current
IVA = 3.0 V, RL "1.0 M ottmsl
*Forward Voltage
TV.
0.05
M..
100
lOA
1.2
I.'
Volts
flF =SOmA)
Capacitance
IVR -av,' -1.0MHzl
Unit
150
pF
PHOTOTRANSISTOR CHARACTERISTICS IT A" 25°C and IF = 0 unless otherwise noted)
Ch.r&c:teristic
Svmbol
4N25, 4N26. 4N27
·Conector·Emitter Dark Current
!Vee = 10 V, Base Ope.nJ
Min
TV.
3.'
'CEO
4N28
·Collector-Base Dark Current
eVee = 10 V, Emitter Open)
·Collector-Emitter Breakdown Voltage
(Ie" 1.0 rnA, Ie =01
*Emitter-Collector Breakdown Voltage
lie = 1oo~A, '8 "'01
Unit
50
eA
100
20
leBO
·Collector·Base Breakdown Voltage
lie '" l00~A.IE =01
M"
nA
VIBR/CBO
70
Volts
VIBR/CEO
30
Volts
VIBR/ECO
7.0
DC Current Gain
(VeE = 5.0 V Ie = SOO"AI
Volts
250
"FE
COUPLED CHARACTERISTICS IT A = 2SoC unless otheMlIse notedl
Characteristic
"Collector Output Current 111
(VeE" 10 V, IF '" 10 mA, IB
~
OJ
"Isolation Voltage (21
4N25,4N26
4N27.4N28
Svmbol
Min
TV.
'e
2.0
1.0
'.0
3.0
4N25
4N26,4N27
4N28
M..
Unit
mA
2500
1500
500
Volts
Isolation Reslslance 121
IV - 500 VI
10"
Ohms
·Collector-Emitter 5aturatio"
(Ie'" 2.0 mA, IF '" 50 mAl
0.2
Isolation Capacitance 121
(V '" 0, f " 1.0 MHzl
1.3
pF
BandWidth (3)
(lC "'2.0mA, RL = 100 ohms, Figure 111
300
kH,
0.'
Votts
SWITCHING CHARACTER ISTICS
Delay Time
IIC'" lOrnA, Vee'" 10 VI
Rise
ime
Figures6and8
flC'" 10 mA, Vee'" 10 VI
all Time
Figures 7 and 8
4N25,4N26
4N27,4N28
'd
0.07
0.10
4N25,4N26
4N27,4N28
'.
0.8
2.0
4N25,4N26
4N27,4N28
"
4.0
2.0
4N25,4N26
4N27,4N28
7.0
3.0
'Indicates JEOeC Registered Data (11 Pulse Test Pulse Width 300 1"5. Dutv CV(.I~-_Vout
100
FIGURE 13 - Coupling An AC Signal to an Operational Amplifier
11-47
AN571A
The circuit of Figure 14 shows the 4N26 being used as a diode-diode coupler, the output being taken from the collectorbase diode. In this mode of operation, the emitter is left open, the load resistor is connected between the base and ground,
and the collector is tied to the positive voltage supply. Using the coupler in this way reduces the switching time from
2 to 3 !IS to 100 ns.
+6
47
5
4N26
r
I
I
I
4
L
+6 V
2
1--
1 .0 1<'-1
6
-=
Input 3 V T L
Pulse
0.6V7"o
50
-6 V
MC1733
90
o
10
tr 10-90 ~100 n$
FIGURE 14 - Using the 4N26 .s. Diode·Diode Coupler
The circuit of Figure 15 is a standard two-transistor one-shot, with one transistor being the output transistor of the
coupler. The trigger to the one-shot is the LED input to the coupler. A pulse of 3 J.Is in duration and 15 rnA will trigger
the circuit. The output pulse width (PWo) is equal to 0.7 RC + PWI + 6 J.Is where PWI is the input pulse width and 6
J.Is is the turn-off delay of the coupler. The amplitude of the output pulse is a function of the power supply voltage of the
output side and independent of the input.
.----IP----....- - O +5 V
4.7 k
A = 47 k
4.7 k
.,.--+---1" V 0
0.031------:'-"
1.2 k
SL
Input
4
L______ -.J
1.2 k
6
100 k
3V
Input
0 vJ
2.5V-r--\
Output
ov~
I I
I" 0
1
I
2
I
3
I
4
I
5
I
6
I
7
I
LI
I
9 10
8
FIGURE 16 - Optically Coupled Schmitt Trigger
+5 V
1 k
1k
10k
10 k
6
r---
+----------_Output
5
6
-----.,
I~:~t~~
1
100
~R.S.t
:..s~lnput
____ -.I
L ____ _
4N26
4N26
Set 2 V 7 \
Input OV
_ _ _ _ _ _ _ _ _ _ _ _ _ __
outpu:.5 V
0.5
/
\-----
v---f
2.0V~
Reset
Input
o V 1---:---'-1-'1---:-1--'-1""'1-:--1:--:'1--'-1-'1---:-1-:-'1 1 1 1 1 1 1 1
t(I's) 0
2
3
4
5
6
8
9 1011121314151617181920
FIGURE 17 - Optically Coupled R-S Flip-Flop
11-49
AN571A
transistor, the turn-off delay is about 6 jlS. The high base
impedance (100 k ohms) represents a compromise between
sensitivity (input drive required) and frequency response.
A low value base resistor would improve speed but would
also increase the drive requirements.
The circuit in Figure 17 can be used as an optically coupled R-S flip-flop. The circuit uses two 4N26 couplers
cross coupled to produce two stable states. To change
the output from a low state to a high state requires a
positive 2 V pulse at the set input. The minimum width
of the set pulse is 3 jlS. To switch the output back to the
low state needs only a pulse on the reset input. The resetoperation is similar to the set operation.
Motorola integrated voltage regulators provide an input
for the express purpose of shutting the regulator off. For
large systems, various subsystems may be placed in a standby mode to conserve power until actually needed. Or the
power may be turned OFF in response to occurrences such
as overheating, over-voltage, shorted output, etc.
With the use of the 4N26 optically coupler, the regulator can be shut down while the controlling signal is
isolated from the regulator. The circuit of Figure 18 shows
a positive regulator connected to an optical coupler.
To insure that the drive to the regulator shut down
control is 1 rnA, (the required current), it is necessary to
drive the LED in the coupler with 5 rnA of current, an
adequate level for logic circuits.
_10=1 mA3
+VO
6
R'
4N26
IF=5mA
r-----
-j]-z.
2
L __
R' • IV;n -1.7
vi
kfl
FIGURE 18 - Optical Coupler Controlling the Shut Down
of MC1569 Voltage Regulator
r---------------------.--o+5
10 k
10 k
./--+-----l~ Out
5
10 pF MPS6515
27 k
2 0 V-- 1-4 jLs-j
Input~
41'S
5V2 t i j L S
Output
tr~O.5lls
FIGU RE 19 - Simple Pulse Amplifier
The circuit in Figure 19 is a simple pulse amplifier using
positive, ac feedback into the base of the 4N26. The
advantage of the feedback is in faster switching time. Without the feedback, the pulse rise time is about 2.0 jlS, but
with the positive feedback, the pulse rise time is about
0.5 jlS. Figure 17 A shows the input and output wavefroms of the pulse amplifier.
REFERENCES
I. "Theory and Characteristics of Phototransistors," Motorola Application Note AN440.
2. "Motorola Switching Transistor Handbook."
3. Deboo, G.J. and C.N. Burrous, Integrated Circuits and
Semiconductor Devices Theory and Application, McGraw-HiIl,1971.
11-50
AN·780A
APPLICATIONS OF THE MOC3011 TRIAC DRIVER
Prepared by:
Pat O'Neil
DESCRIPTIONS OF THE MOC3011
Construction
The MOC30 11 consists of a gallium arsenide infrared
LED optically exciting a silicon detector chip, which is
especially designed to drive triacs controlling loads on the
115 Vac power line. The detector chip is a complex device
which functions in much the same manner as a small
triac, generating the signals necessary to drive the gate of
a larger triac. The MOC3011 allows a low power exciting
signal to drive a high power load with a very small number
of components, and at the same time provides practically
complete isolation of the driving circuitry from the
power line.
The detector has a mmunum blocking voltage of
250 Vdc in either direction in the off state. In the on
state, the detector will pass 100 rnA in either direction
with less than 3 V drop across the device. Once triggered
into the on (conducting) state, the detector will remain
there until the current drops below the holding current
(typically 100 /lA) at which time the detector reverts to
the off (non-conducting) state. The detector may be
triggered into the on state by exceeding the forward
blocking voltage, by voltage ramps across the detector
at rates exceeding the static dv/ dt rating, or by photons
from the LED. The LED is guaranteed by the specifications to trigger the detector into the on state when
10 rnA or more -is passed through the LED. A similar
device, the MOC301O, has exactly the same characteristics
except it requires 15 rnA to trigger.
Basic Electrical Description
The GaAs LED has nominal 1.3 V forward drop at
10 rnA and a reverse breakdown voltage greater than 3 V.
The maximum current to be passed through the LED
is SOmA.
11-51
AN780A
Since the MOC30 11 looks essentially like a small optically
triggered triac, we have chosen to represent it as shown
on Figure 2.
RLoad
6
150
R1
~~
~
~~
MOC3011
4
FIGURE 3 - Simple Triac Gating Circuit
FIGURE 2 - Schematic Representation
of MOC3011 and M0C3010
USING THE MOC30 11 AS A TRIAC DRIVER
Triac Driving Requirements
Figure 3 shows a simple triac driving circuit using
the MOC3011. The maximum surge current rating of the
MOC3011 sets the minimum value of RI through the
equation:
5V
Vce
300
1
6
MOC3011
RI (min) = Vin(pk)/1.2 A
180
R1
If we are operating on the 115 Vac nominal line voltage,
Vin(pk) =180 V, then
C1
4
RI(min) = Vin(Pk)/1.2 A = 150 ohms.
In practice, this would be a 150 or 180 ohm resistor.
If the triac has IGT = 100 rnA and VGT = 2 V, then the
voltage Yin necessary to trigger the triac will be given
by VinT = Rl • IGT + VGT + VTM = 20 V.
NOTE: Circuit supplies 25 rnA drive to gate of triac at
Vin = 25 V and TA.s;;;; 70°C.
TRIAC
IGT
R2
C
15mA
2400
0.1
30mA
1200
0.2
50mA
800
0.3
Resistive Loads
When driving resistive loads, the circuit of Figure 3
may be used. Incandescent lamps and resistive heating
elements are the two main classes of resistive loads for
which liS Vac is utilized. The main restriction is that
the triac must be properly chosen to sustain the proper
inrush loads. Incandescent lamps can sometimes draw
a peak current known as "flashover" which can be
extremely high, and the triac should be protected by a
fuse or rated high enough to sustain this current.
FIGU RE 4 - Logic to Inductive Load Interface
11-52
AN780A
the snubber used for the MOC3011 will also adequately
protect the triac.
In order to design a snubber properly, one should
really know the power factor of the reactive load, which is
defined as the cosine of the phase shift caused by the
load. Unfortunately, this is not always known, and this
makes snubbing network design somewhat empirical.
However a method of designing a snubber network
may be defined, based upon a typical power factor. This
can be used as a "first cut" and later modified based
upon experiment.
Assuming an inductive load with a power factor of
PF = 0.1 is to be driven. The triac might be trying to turn
off when the applied voltage is given by
Line Transients-Static dv/dt
Occasionally transient voltage disturbance on the ac
line will exceed the static dv/dt rating of the MOC3011.
In this case, it is possible that the MOC3011 and the
associated triac will be triggered on. This is usually not a
problem, except in unusually noisy environments, because
the MOC3011 and its triac will commute off at the next
zero crossing of the line voltage, and most loads are
not noticeably affected by an occasional single half.cycle
of applied power. See Figure 5 for typical dv/dt versus
temperature curves.
Vto = VpkSin q, "" Vpk "" 180 V
Inductive Loads-Commutating dv/dt
Inductive loads (motors, solenoids, magnets, etc.)
present a problem both for triacs and for the MOC3011
because the voltage and current are not in phase with each
other. Since the triac turns off at zero current, it may be
trying to turn off when the applied current is zero but the
applied voltage is high. This appears to the triac like a
sudden rise in applied voltage, which turns on the triac
if the rate of rise exceeds the commutating dv/dt of the
triac or the static dv/dt of the MOC3011.
First, one must choose RI (Figure 4) to limit the peak
capacitor discharge current through the MOC30l1. This
resistor is given by
RI = Vpk/lmax = 180/1.2 A = 150 n
A standard value, 180 ohm resistor can be used in practice
for Rl.
It is necessary to set the time constant for 7 = R2C.
Assuming that the triac turns off very quickly, we have a
peak rate of rise at the MOC30 II given by
Snubber Networks
dv/dt = Vto/7 = Vto/R2C
The solution to this problem is provided by the use of
"snubber" networks to reduce the rate of voltage rise
seen by the device. In some cases, this may require two
snubbers-one for the triac and one for the MOC3011.
The triac snubber is dependent upon the triac and load
used and will not be discussed here. In many applications
Setting this equal to the worst case dv/dt (static) for the
MOC3011 which we can obtain from Figure 5 and solving
for R2C:
dv/dt(TJ =70 0 C) = 0.8 V/p.s = 8 X 105
R2C = Vto/(dv/dt) = 180/(8 X 105) "" 230 X 10-6
Vcc
Rin
--Staticdv!dt
- - - Commutating dv/dt
2.0
0;;;
~
1.6
u
>=
~
1.2
~
~
0.8
~
,
- ,RL =2k!!
I-+-
RL=510H
~
~
0
25
40
Vin~
1-0
4
RL
0.16 ;,
0
;;:
"
"':::..
0.12 ~
~
I=..:::
-- -r-....-
1-1-
r-....
z
;-
.~
-I""' ~
0.08 ~
<
~
0.04
~
~
OV
Commutating --+Static-l
dv/dt
~
30
MOC3011
0-
Q:
.........
0.4
,--2.
0.20
6
1
0.24
24
dv/dt
0
50
60
10
80
90
100
dv/dt '" 8.9 f Vin
TA. AM81ENT TEMPERATURE IOC)
dv/dt Test Circuit
FIGURE 5 - dv/dt varsus Tamparatura
11-53
~
2N3904
-=
AN780A
The largest value of R2 available is found, taking into
consideration the triac gate requirements. If a sensitive
gate triac is used, such as a 2N6071B, IGT = IS rnA @
-400C.lfthe triac is to be triggered when Yin .;; 40 V
15 rnA allows a simple formula to calculate the input
resistor.
Ri = (VCC - 1.5)/0.015
Examples of resistive input circuits are seen in Figures
2 and 6.
(RI + R2) "" Vin/IGT "" 40/0.015 "" 2.3 k
Increasing Input Sensitivity
If we let R2 = 2400 ohms and C =0.1 jJI', the snubbing
requirements are met. Triacs having less sensitive gates
will require that R2 be lower and C be correspondingly
higher as shown in Figure 4.
In some cases, the logic gate may not be able to source
or sink 15 rnA directly. CMOS, for example, is specified
to have only 0.5 rnA output, which must then be
increased to drive the MOC30 11. There are numerous
ways to increase this current to a level compatible with
the MOC3011 input requirements; an efficient way is
to use the MCI4049B shown in Figure 6. Since there are
six such buffers in a single package, the user can have.
a small package count when using several MOC30 II's
in one system.
INPUT CIRCUITRY
Resistor Input
When the input conditions are well controlled, as for
example when driving the MOC3011 from a TTL, DTL, or
HTL gate, only a single resistor is necessary to interface
the gate to the input LED of the MOC3011. This resistor
should be chosen to set the current into the LED to be
a minimum of 10 rnA but no more than 50 rnA. IS rnA is
a suitable value, which allows for considerable degradation
of the LED over time, and assures a long operating life for
the coupler. Currents higher than IS rnA do not improve
performance and may hasten the aging process inherent
in LED's. Assuming the forward drop to be 1.5 V at
6
1S0
MOC3011
FIGURE 7 - MOC3011 Input Protection Circuit
Vcc
R
6
2
5
MOC3011
1/6 Hex Buffer
3
Vcc
R
HEX BUFFER
5.0 V
220.0
MC75492
10V
600.0
MC75492
1SV
910.0
MC14049B
1aO
0.11'F
4
FIGURE 6 - MOS to ae Load Intarfaca
11-54
2.4 k
2N6071B
11SVac
AN780A
Input Protection Circuits
a long operating lifetime. On the other hand, care should
be taken to insure that the maximum LED input current
(50 rnA) is not exceeded or the lifetime of the MOC30 II
may be shortened.
In some applications, such as solid state relays, in
which the input voltage varies widely the designer may
want to limit the current applied to the LED of the
MOC30 II. The circuit shown in Figure 7 allows a noncritical range of input voltages to properly drive the
MOC3011 and at the same time protects the input LED
from inadvertent application of reverse polarity.
APPLICATIONS EXAMPLES
Using the MOC3011 on 240 Vac Lines
The rated voltage of a MOC30 11 is not suffiCiently
high for it to be used directly on 240 Vac line; however,
the designer may stack two of them in series. When used
this way, two resistors are required to equalize the voltage
dropped across them as shown in Figure 8.
LED Lifetime
All light emitting diodes slowly decrease in brightness
during their useful life, an effect accelerated by high
temperatures and high LED currents. To allow a safety
margin and insure long service life, the MOC30 II is
actually tested to trigger at a value lower than the
specified 10 rnA input threshold current. The designer
can therefore design the input cirCUitry to supply lOrnA
to the LED and still be sure of satisfactory operation over
Remote Control of ac Voltage
Local building codes frequently reqUire all liS Vac
light switch wiring to be enclosed in conduit. By using
a MOC3011, a triac, and a low voltage source, it is
+5 V
150
180
Load
MOC3011
1M
MOC3011
1 M
1k
FIGURE 8 - 2 MOC3011 Triac Drivers in Series to Drive 240 V Triac
Non-Conduit #22 Wire
180
115 Vac
360
-7-'--- 2N6342A
5V
FIGURE 9 - Remote Control of ac Loads Through Low Voltage Non-Conduit Cable
11-55
AN780A
possible to control a large lighting load from a long
distance through low voltage signal wiring which is completely isolated from the ac line. Such wiring usually is
not required to be put in conduit, so the cost savings in
installing a lighting system in commercial or residential
buildings can be considerable. An example is shown in
Figure 9. Naturally, the load could also be a motor,
fan, pool pump, etc.
(I/O) port is a TTL-compatible terminal capable of driving
one or two TTL loads. This is not quite enough to drive
the MOC3011, nor can it be connected directly to an SCR
or triac, because computer common is not. normally
referenced to one side of the ac supply. Standard 7400
series gates can provide an input compatible with the
output of an MC6820, MC6821, MC6846 or similar
peripheral interface adaptor and can directly drive the
MOC3011. If the second input of a 2 input gate is tied
to a simple timing circuit, it will also provide energization
of the triac only at the zero crossing of the ac line voltage
as shown in Figure II. This technique extends the life
of incandescent lamps, reduces the surge current .strains
on the triac, and reduces EMI generated by load switching.
Of course, zero crossing can be generated within the
microcomputer itself, but this requires considerable
software overhead and usually just as much hardware
to generate the zero-crossing timing signals.
Solid State Relay
Figure 10 shows a complete general purpose, solid state
relay snubbed for inductive loads with input protection.
When the designer has more control of the input and
output conditions, he can eliminate those components
which are not needed for his particular application to
make the circuit more cost effective.
Interfacing Microprocessors to 115 Vac Peripherals
The output of a typical microcomputer input-output
150
2.4 k
180
2W
lN4002
115 Vac
10 k
47
FIGURE 10 - Solid-Stale Relay
+5Vo-__
~~
200W
+5 V
____________,
180
Address
MC6800
or
MC6802
115 Vae
MC68201-~t-r-~~----~--~~
(Resistive
Load)
or
MC6821
Motor
(;
M
U
o
::;;
1 k
+-...JooIVV--C 5 Vac
Opto Triac
Drivers
Optional
Zero-Crossing
Circuitry
FIGURE 11 - Interfacing an M6SDD Microcomputer System to 115 Vac Loads
11-56
115 Vac
( Inductive
Load)
MOTOROLA
-
SEMICONDUCTOR
APPLICATION NOTE
AN846
Rev. 1
Basic Concepts of Fiber Optics and
Fiber Optic Communications
Prepared bV
John Bliss, Applications Engineer
Joseph Slaughter, Product Engineer
Motorola Discrete & Special Technologies Group
INTRODUCTION
This note presents an introduction to the principles of
fiber optics. Its purpose is to review some basic concepts
from physics that relate to fiber optics and the application
of semiconductor devices to the generation and detection
of light transmitted by optical fibers. The discussion
begins with a description of a fiber optic link and the
inherent advantages of fiber optics over wired systems.
A FIBER OPTIC LINK
Webster gives as one definition of a link "something
which binds together or connects." In fiber optics, a link
is the assembly of hardware which connects a source of
a signal with its ultimate destination. The items which
comprise the assembly are shown in Figure 1. As the
figure indicates, an input signal, for example, a serial
digital bit stream, is used to modulate a light source,
typically an LED (light emitting diode). A variety of modulation schemes can be used. These will be discussed
later. Although the input signal is assumed to be a digital
bit stream, it could just as well be an analog signal, perhaps video.
~~~:l
The modulated light must then be coupled into the
optical fiber. This is a critical element of the system.
Based on the coupling scheme used, the light coupled
into the fiber could be two orders of magnitude less than
the total power of the source.
Once the light has been coupled into the fiber, it is
attenuated as it travels along the fiber. It is also subject
to distortion. The degree of distortion limits the maximum data rate that can be transmitted through the fiber.
At the receive end of the fiber, the light is coupled into
a detector element (like a photo diode). The coupling
problem at this stage, although still of concern, is considerably less severe than at the source end. The detector
signal is then reprocessed or decoded to reconstruct the
original input signal.
A link like that described in Figure 1 can be fully transparent to the user. That is, everything from the input
signal connector to the output signal connector can be
prepackaged. Thus, the user need only be concerned with
supplying a signal of some standard format and level
(like NRZ T2L) and extracting a similar signal. Such a T2L
infT2L out system obviates the need for a designer to
understand fiber optics. However, by analyzing the problems and concepts internal to the link, the user is better
prepared to apply fiber optics technology to his system.
-1L_..;.,.PR~O..;,CE~SS~OR;,:..._J========~E--l
~
SIGNAL
_
(MODULATOR) _ _ _ _ _ _ _ _ _ _ _ _
- - - - - TRANSMITTER
-"
~
~~
_
((=========OPTICA=lABER===:jr-1
~-~--~~~~===============asl
__~ffi~~~I~~~~~R~~1!
~
_
(DEMODULATOR)
- - - - - - - - RECEIVER--------_
Figure 1. A Fiber Optic Link
11-57
.
OUTPUT
SIGNAL
AN846
ADVANTAGES OF FIBER OPTICS.
There are both performance and cost advantages to be
realized by using fiber optics over wire.
GREATER BANDWIDTH
The higher the carrier frequency in a communication
system, the greater its potential.signal bandwidth. Since
fiber optics work with carrier frequencies on the order of
10 13_10 14 Hz as compared to radio frequencies of
106...108 Hz, signal bandwidths are theoretically 106 times
greater.
SMALLER SIZE AND WEIGHT
Asingle fiber is capable of replacing a very large bundle
of individual copper wire. For example, a typical telephone cable may contain over 1,000 pairs of copper wire
and have a cross-sectional diameter of seven to ten centimeters. A single glass fiber cable capable of handling
the same amount of signal might be only one-half centimeter in diameter. The actual fiber may be as small as
50 p,-meters. The additional size is the jacket and strength
elements. The weight reduction in this example should
be obvious.
LOWER ATTENUATION
Length for length, optical fiber exhibits less attenuation
than does twisted wire or coaxial cable. Also, the attenuation of optical fibers, unlike that of wire, is not signal
frequency dependent.
FREEDOM FROM EMI
Unlike wire, glass does not pick up nor generate
electro-magnetic interference (EMI). Optical fibers do not
require expensive shielding techniques to desensitize
them to stray fields.
RUGGEDNESS
Glass is 20 times stronger than steel and since glass is
relatively inert, corrosive environments are of less concern than with wired systems.
SAFETY
In many wired systems, the potential hazard of short
circuits between wires or from wires to ground, requires
special precautionary designs. The dielectric nature ,of
optic fibers eliminates this requirement and the concern
for hazardous sparks occurring during interconnects.
LOWER COST
Optical fiber costs are continuing to decline while the
cost of wire is increasing. In many applications today, the
total system cost for a fiber optic design is lower than
for a comparable wired design. As time passes, more and
more systems will be decidedly less expensive with optical fibers.
PHYSICS OF LIGHT
The performance of optical fibers can be fully analyzed
by application of Maxwell's Equations for electromagnetic fields. However, these are necessarily complex and,
fortunately, can be bypassed for most users by the application of geometric ray tracing and analysis. When considering LEOs and photo detectors, the particle theory of
light is used. The change from ray to particle theory is
fortunately a simple step.
Over the years, it has been demonstrated that light (in
fact, all electromagnetic energy) travels at approximately
300,000 km/second in free space. It has also been demonstrated that in materials denser than free space, the
speed of light is reduced. This reduction in the speed of
light as it passes from free space into a denser material
results in refraction of the light. Simply stated, the light
REFRACTED
UGHT
RAY
FREE
SPACE
RED
DENSER
MATERIAL
VIOLET
1.1
Ibl
Figure 2. Refraction Of Light:
a. Light refraction at an interface; b. White light spectral separation by prismatic refraction.
11-58
AN846
ray is bent at the interface. This is shown in Figure 2a.
In fact, the reduction of the speed of light is different for
different wavelengths; and, therefore, the degree of
bending is different for each wavelength. It is this vari·
ation in effect for different wavelengths that results in
rainbows. Water droplets in the air act like small prisms
(Figure 2b) to split white sunlight into the visible spec·
trum of colors.
The actual bend angle at an interface is predictable and
depends on the refractive index of the dense material.
The refractive index, usually given the symbol n, is the
ratio of the speed of light in free space to its speed in the
denser material:
n = speed of light in free space
speed of light in given material
(1)
Although n is also a function of wavelength, the vari·
ation in many applications is small enough to be ignored
and a single value is given. Some typical values of n are
given in Table 1:
The angle of refraction, 82, can be determined:
=
!!1. sin81
(3)
sin82 =
!!1. sin81
(4)
sin82
n2
If material 1 is air, nl has the value of 1; and since n2
is greater than 1, 82 is seen to be less than 81; that is, in
passing through the interface, the light ray is refracted
(bent) toward the normal.
If material 1 is not air but still has an index of refraction
less than material 2, the ray will still be bent toward the
normal. Note that if n2 is less than nl, 82 is greater than
81, or the ray is refracted away from the normal.
Consider Figure 4 in which an incident ray is shown at
an angle such that the refracted ray is along the interface
or the angle of refraction is 90°. Note that nl > n2. Using
Snell's law:
n2
or, with 82 equal to 90°:
sin81
Table 1.
Representative Indices of Refraction
=
n2
nl
= sin8 c
Vacuum ............................... 1.0
Air ............................. 1.0003 (1.0)
Water ................................ 1.33
Fused Quartz. . . . . . . . . . . . . . . . . . . . . . . . . .. 1.46
Glass ................................. 1.5
Diamond ............................... 2.0
Silicon ................................ 3.4
Gallium·Arsenide ......................... 3.6
(5)
NORMAL
/'
INTERFACE
It is interesting to consider what happens to a light ray
as it meets the interface between two transmissive mate·
rials. Figure 3 shows two such materials of refractive
indices nl and n2. A light ray is shown in material 1 and
incident on the interface at point P. Snell's law states that:
(2)
INCIDENT
UGHT RAY
Figure 4. Critical Angle Reflection
INTERFACE
",
The angle, 8c, is known as the critical angle and defines
the angle at which incident rays will not pass through the
interface. For angles greater than 8c, 100 percent of the
light rays are reflected (as shown in Figure 5), and the
angle of incidence equals the angle of reflection.
This characteristic of reflection for light incident at
greater than the critical angle is a fundamental concept
in fiber optics.
OPTICAL FIBERS
Figure 3. Refractive Model For Snell's Law
Figure 6 shows the typical construction of an optical
fiber. The central portion, or core, is the actual propa·
gating path for light. Although the core is occasionally
constructed of plastic, it is more typically made of glass.
The choice of material will be discussed later. Bonded to
11-59
AN846
1/
NORMAL,
2'~
--_.....r:
ANGLE OF INCIDENCE
ANGLE OF REFlECTION
Oc = 03 (min) = sin-1 n2
n1
Now, since 82 is a complementary angle to 03,
02 (max)
=
sin- 1
(n1 2 - n22)1/2
(6)
(7)
n1
Again applying Snell's law at the entrance surface
(recall nair = 1),
sinOin (max) = n1 sin02 (max)
(8)
Combining (7) and (8),
sinOin (max) = (n1 2 - n22)1/2
(9)
0in (max) represents the largest angle with the normal
to the fiber end for which total internal reflection will
occur at the core/clad interface. Light rays entering the
fiber end at angles greater than Oin (max) will pass
through the interface at P and be lost. The value sinOin
(max) is one ofthe fundamental parameters for an optical
fiber. It defines the half-angle of the cone of acceptance
for light to be propagated along the fiber and is called
the "numerical aperture," usually abbreviated N.A.
N.A.
PROTECTIVE
JACKET
nAIR
Figure 7. Index Profile For A Step Index Fiber
the core is a cladding layer - again, usually glass,
although plastic cladding of glass core is not uncommon.
The composition of glass can be tailored during processing to vary the index of refraction. For example, an
all-glass, or silica-clad fiber, may have the compositions
set so that the core material has an index of refraction
of 1.5; and the clad has an index of refraction of 1.485.
To protect the clad fiber, it is typically enclosed in some
form of protective rubber or plastic jacket. This type of
optical fiber is called a "step index multi mode" fiber. Step
index refers to the profile of the index of refraction across
the fiber (as shown in Figure 7). The core has an essentially constant index n1. The classification "multi mode"
should be evident shortly.
CLADDING
n2
L..-_
_ __
of total internal reflection is applied at point P, the critical
angle value for 83 is found by Snell's law:
Figure 5. Light Incident At Greater Than Critical Angle
CORE
fl
= sinOin
(max)
= (n1
2 - n22)112
(10)
There are several points to consider about N.A. and
equation (10). Recall that in writing (8). we assumed that
the material at the end of the fiber was air with an index
of 1. If it were some other material, (8) would be written
with n3 representing the material:
n3 sinllin (max)
Figure 6. Single Fiber Construction
=
n1 sin02 (max)
(11)
and, combining (7) and (11),
NUMERICAL APERTURE
Applying the concept of total internal reflection at the
n1 n2 interface, we can now demonstrate the propagation
of light along the fiber core and the constraint on light
incident on the fiber end to ensure propagation. Figure
8 illustrates the analysis. As the figure shows, ray propagation results from the continuous reflection at the corel
clad interface such that the ray bounces down the fiber
length and ultimately exits at the far end. If the principle
.
slnin (max)
(n1 2 - n22)1/2
N.A.
(12)
n3
That is, the N.A. would be reduced by the index of refraction of the end material. When fiber manufacturers specify N.A., it is usually given for an air interface unless
otherwise stated.
The second point concerns the absoluteness of N.A.
The analysis assumed that the light rays entered the fiber,
and in propagating along it, they continually passed
11-60
=
AN846
JACKET
CLAD
n,
CORE
RAY
/
Figure 8. Ray Propagation In A Fiber
through the central axis of the fiber. Such rays are called
"meridional" rays. It is entirely possible that some rays
may enter the fiber at such an angle that in passing down
the fiber, they never intercept the axis. Such rays are
called "skew" rays. An example is shown in both side
and end views in Figure 9.
and high order modes 1) is connected to a high N.A. radiometric sensor, such as a large-area photodiode. The
power detected by the sensor is read on a radiometer
power meter. The other end of the fiber is mounted on
a rotatable fixture such that the axis of rotation is the end
of the fiber. A collimated light source is directed at the
.,
~
:,....-
0.9
/
0.8
~ 0.7
0.4
!g
0.3
~ ~ SIN·I NA
\
/
~§ 0.6
5 ~ 0.5
~~
.........
2
1\
/
\
/
'\
/
""
~ 0.2
z 0.1
\
e (10 dB}
o
50"
40"
30"
20'
10"
10"
20'
w, ANGLE FROM PEAK AXIS
1'30"
40"
50'
Figure 9. Skew Ray Path
Figure 10, Graphical Definition Of Numerical Aperture
Also, some rays may enter at angles very close to the
critical angle. In bouncing along the fiber, their path
length may be considerably longer than rays at shallower
angles. Consequently, they are subject to a larger probability of absorption and may, therefore, never be
recovered at the output end. However, for very short
lengths of fiber, they may not be lost. These two effects,
plus the presence of light in the cladding for short
lengths, results in the N.A. not cutting off sharply according to equations (10) and (12) and of appearing larger for
short lengths. It is advisable to define some criteria for
specifying N.A. At Motorola, N.A. is taken as the acceptance angle for which the response is no greater than
10 dB down from the peak value. This is shown in Figure
10. Figure 11 shows a typical method of measuring a
fiber's N.A. In the measurement, a sample to be measured (at least 1 meter to allow the attenuation of clad
end of the fiber. This can be a laser or other source, such
as an LED, at a sufficient distance to allow the rays entering the fiber to be paraxial. The fiber end is adjusted to
find the peak response position. Ideally, this will be at
zero degrees; but manufacturing variations could result
in a peak slightly offset from zero. The received power
level is noted at the peak, The fiber end is then rotated
until the two points are found at which the received
power is one-tenth the peak value, The sine of half the
angle between these two points is the N,A.
The apparent N,A. of a fiber is a function of the N.A.
of the source that is driving it, For example, Figures 12a
and 12b are plots of N,A. versus length for the same fiber.
1High order modes refers to steep angle rays.
11-61
AN846
90
COLUMATED
UGHT
SOURCE
POWER
METER
90
Figure 11. Measurement Of Fiber Numerical Aperture
In (12a) the source has a large NA (0.7), while in (12b)
the source N.A. is 0.32. Note that in both cases, the N.A.
at 100m is about 0.31; but at 1 meter, the apparent N.A.
is 0.42 in (12a) but 0.315 in (12b). The high order modes
entering the fiber from the 0.7 N.A. source take nearly
the full 100 meters to be stripped out by attenuation.
Thus, a valid measurement of a fiber's true N.A. requires
a collimated, or very low, N.A. source or a very longlength sample.
FIBER ATTENUATION
Mention was made above of the "stripping" or attenuation of high order modes due to their longer path
length. This suggests that the attenuation of power in a
fiber is a function of length. This is indeed the case. A
number of factors contribute to the attenuation: imperfections at the core/clad interface; flaws in the consistency of the core material; impurities in the composition.
The surface imperfections and material flaws tend to
affect all wavelengths. The impurities tend to be selective
0.7
0.6
1"._.
S~UR~EI~11~lo.7
I
1
,1"---
FIBER TYPES
It was stated at the beginning of this section that fibers
be made of glass or plastic. There are three varieties
available today:
H
-t
O.7
o.5
t--
:
A
= 820nm
0.3
1--
2
[
0.1
1
,I
I
0.1
11III11
sO~RiE ~~( ~1I0.32
0.4
I
0.01
1. Plastic core and cladding;
2. Glass core with plastic cladding - often called 'pes'
(plastic-clad silica);
3. Glass core and cladding - silica-clad silica.
0.6
I.
~.---t
A~82~,~~
t-
in the wavelength they affect. For example, hydroxl radicals (OH-) are strong absorbers of light at 900 nm. Therefore, if a fiber manufacturer wants to minimize losses at
900 nm, he will have to take exceptional care in his process to eliminate moisture (the source of OH-). Other
impurities are also present in any manufacturing process.
The degree to which they are controlled will determine
the attenuation characteristic of a fiber. The cumulative
effect of the various impurities results in plots of attenuation versus wavelength exhibiting peaks and valleys.
Four examples of attenuation (given in dB/km) are shown
in Figure 13.
1
FIBER LENGTH (METERS)
I
10
0
0.01
100
0.1
1
FIBER LENGTH (METERS)
10
(b)
(a)
Figure 12. Fiber Numerical Aperture versus Length For Two Valves Of Source N.A.
11-62
1110
AN846
10,000
cc:r== __
- f-1,000
E
ill
'"~
F-.-t-
100
t--
~
:>
z
S
10
400
500
600
700
600
900
1,000
1,100
WAVElENGTii Inml
Figure 13. Fiber Attenuation versus Wavelength
All plastic fibers are extremely rugged and useful for
systems where the cable may be subject to rough dayafter-day treatment. They are particularly attractive for
benchtop interconnects. The disadvantage is their high
attenuation characteristic.
PCS cables offer the better attenuation characteristics
of glass and are less affected by radiation than all-glass
fibers. 2 They see considerable use in military-grade
applications.
All glass fibers offer low attenuation performance and
good concentricity, even for small-diameter cores. They
are generally easy to terminate, relative to PCS. On the
down side, they are usually the least rugged, mechanically, and more susceptible to increases in attenuation
when exposed to radiation.
The choice of fiber for any given application will be a
function of the specific system's requirements and tradeoff options.
So far, the discussion has addressed single fibers.
Fibers, particularly all-plastic, are frequently grouped in
bundles. This is usually restricted to very low-frequency,
short-distance applications. The entire bundle would
interconnect a single light source and sensor or could be
21t should be noted that the soft clad material should be removed and
replaced by a hard clad material for best fiber coreMtoMconnector
termination.
used in a fan-out at either end. Bundles are also available
for interconnecting an array of sources with a matched
array of detectors. This enables the interconnection of
multiple discrete signal channels without the use of multiplex techniques. In this type of cable, the individual
fibers are usually separated in individual jackets and, perhaps, each embedded in clusters of strength elements,
like Kevlar. In one special case bundle, the fibers are
arrayed in a ribbon configuration. This type cable is frequently seen in telephone systems using fiber optics.
In Figure 7, the refractive index profile was shown as
constant over the core cross-section with a step reduction
at the core/clad interface. The core diameter was also
large enough that many modes (low and high order) are
propagated along its path. In Figure 14, a section of this
fiber is shown with three discrete modes shown propagating down the fiber. The lowest order mode is seen
traveling parallel to the axis of the fiber. The middle order
mode is seen to bounce several times at the interface.
The total path length of this mode is certainly greater
than that ofthe mode along the axis. The high order mode
is seen to make many trips across the fiber, resulting in
an extremely long path length.
The signal input to this fiber is seen as a step pulse of
light. However, since all the light that enters the fiber at
a fixed time does not arrive at the end at one time (the
higher modes take longer to traverse their longer path),
the net effect is to stretch or distort the pulse. This is
characteristic of a multi mode, step-index fiber and tends
to limit the range of frequency for the data being
propagated.
Figure 15 shows what this pulse stretching can do. An
input pulse train is seen in (15a). At some distance (say
100 meters), the pulses (due to dispersion) are getting
close to running together but are still distinquishable and
recoverable. However, at some greater distance (say 200
meters), the dispersion has resulted in the pulses running
together to the degree that they are indistinquishable.
Obviously, this fiber would be unusable at 200 meters for
this data rate. Consequently, fiber specifications usually
give bandwidth in units of MHz-km - that is, a 200 MHzkm cable can send 200 MHz data up to 1.0 km or 100 MHz
data up to 2.0 km etc.
To overcome the distortion due to path length differences, fiber manufacturers have developed graded index
fiber. An example of multi mode, graded-index fiber is
shown in Figure 16.
Figure 14. Propagation Along A Multimode Step Index Fiber
11-63
AN846
B.
~
I
,,\,
,, ,,
,
A. INPUT
/
C.
B. SIGNAL AT 100 METERS
"
,/',\,
"\
,' ,,,
'..
C. SIGNAl AT 200 METERS
Figure 15. Loss Of Pulse Identity Due To Pulse Width Dispersion
In the fiber growth process, the profile of the index of
refraction is tailored to follow the parabolic profile shown
in the figure. This results in low order modes traveling
through a constant density material. High order modes
see lower density· material as they get further away from
the axis of the core. Thus, the velocity of propagation
increases away from the center. The result is that all
modes, although they may travel different distances, tend
to cover the length of the fiber in the same amount of
time. This yields a fiber with higher bandwidth capability
than multimode stepped index.
One more fiber type is also available. This is the single
mode, step-index fiber shown in Figure 17. In this fiber,
the core is extremely small (on the order of just a few
micrometers). This type accepts only the lowest order
mode and suffers no modal dispersion. It is an expensive
fiber and requires a very high-power, highly-directional
source like a laser diode. Consequently, applications for
this type offiber are the very high data rate, long-distance
systems.
As a final statement on fiber properties, it is interesting
to compare optical fiber with coax cable. Figure 18 shows
the loss versus frequency characteristics for a low-loss
fiber compared with the characteristics of several common coax cables. Note that the attenuation of optical fiber
is independent of frequency (up to the point where modal
dispersion comes into play).
ACTIVE COMPONENTS FOR FIBER OPTICS
Propagation through fiber optics is in the form of light
or, more specifically, electromagnetic radiation in the
spectral range of near-infrared or visible light. Since the
signal levels to be dealt with are generally electrical in
nature (like serial digital logic at standard T2L levels), it
is necessary to convert the source signal into light at the
transmitter end and from light back to r2L at the receive
end. There are several components which can accompish
these conversions. This discussion will concentrat!l on
light emitting diodes (LEDs) as sources and PIN photo
diodes and Integrated Detector Preamplifiers (lDPs) as
sensors.
LIGHT EMITTING DIODES
Most people are familiar with LEDs in calculator displays. Just as they are optimized geometrically and visually for the function of displaying characters, some LEDs
are specifically designed and processed to satisfy the
requirements of generating light, or near infrared for coupling into fibers. There are several criteria of importance
for LEDs used with fibers:
1.
2.
3.
4.
Output power;
Wavelength;
Speed;
Emission pattern.
Figure 16. Propagation Along A Multimode Graded Index Fiber
.11-64
AN846
A;~_----, U
..
n
PULSE
SINGLE PflOPAGATED MODE Ie
nPROFILE
Figure 17. Propagation Along A Single Mode Step Index Fiber
OUTPUT POWER
Manufacturers are continually striving to increase the
output power or efficiency of LEDs. The more efficient
an LED, the lower its drive requirements, or the greater
the losses that can be accommodated elsewhere in the
system. However, total power emitted by an LED is not
the whole picture (see Emission Pattern).
WAVELENGTH
As shown earlier, optical fibers exhibit an attenuation
characteristic that varies with wavelength. Figure 19 is a
repeat of one of the sample curves from Figure 13. If this
fiber were to be used in a system, the desired wavelength
of operation would be about 875 nm where the attenuation is down to about 7.0 dB/km. The most undesirable
wavelength for use in this fiber's range is 630 nm where
the loss is about 600 dB/km. Therefore, all other considerations being satisfied, an LED with a characteristic
emission wavelength of 875 nm would be used.
140
120
100
I
60
~
40
0
~
EMISSION PATTERN
In typical data communications systems that light from
the LED is coupled into a fiber with a core diameter of
50 to 100 ,."m. If the emission pattern of a particular LED
is a collimated beam of 50 ,."m or less diameter, it might
be possible to couple nearly all the power into the fiber.
Thus, a 100,."W LED with such an emission pattern might
be a better choice than a 5.0 mW LED with a lambertian 3
pattern.
LIGHT GENERATION
Light is emitted from an LED as a result of the recombining of electrons and holes. Electrically, an LED is just
a P-N junction. Under forward bias, minority carriers are
injected across the junction. Once across, they recombine
with majority carriers and give up their energy in the
process. The energy given up is approximately equal to
the energy gap for the material. The same injectionl
recombination process occurs in any P-N junction; but
in certain materials, the nature of the process is typically
3Lambertian: The spatial pattern of reflected light from a sheet of paper,
e.g. The intensity of light in any direction from a plane lambertian surface
is equal to the intensity in the direction afthe normal to the surtace times
the cosine of the angle between the direction and the normal.
8Q
z
so it would not be advisable to select the fastest diode
available but rather the fastest required to do the job,
with some margin designed in.
20
200
600
400
FREQUENCY IMHz)
BOO
1000
1,000
Figure 18. Comparative Attenuation versus Frequency
For Optical Fiber and Coax Cable
SPEED
LEDs exhibit finite turn-on and turn-off times. A device
with a response of 100 ns would never work in a 20 MHz
system. (In general, the 3.0 dB bandwidth is equal to 0.35
divided by the risetime.) In a symmetrical RTZ system
(see data encoding later in this paper). the pulse width
for a single bit would be 25 ns. A 100 ns LED would hardly
have begun to turn on when it would be required to turn
off. There is often a trade-off between speed and power,
11-65
400
500
600
700
BOO
Inm)
900
1,000
WAVELENG~
Figure 19. Attenuation versus Wavelength
For A Sample Fiber
1,100
AN846
radiative - that is, a photon of light is produced. In other
materials (silicon and germanium, for example), the process is primarily non-radiative and no photons are
generated.
Light emitting materials do have a distribution of nonradiative sites - usually crystal lattice defects, impurities,
etc. Minimizing these is the challenge to the manufacturer
in his attempt to produce more efficient devices. It is also
possible for non-radiative sites to develop over time and,
thus, reduce efficiency. This is what gives LEDs finite
lifetimes, although 105 to 106-hour lifetimes are essentially infinite compared with some other components of
many systems.
The simplest LED structures are homojunction, epitaxially-grown devices and single-diffused devices. These
structures are shown in Figure 20.
The epitaxially-grown LED is generally constructed of
silicon-doped gallium-arsenide. A melt of elemental gallium containing arsenic and silicon dopant is brought in
contact at high temperature with the surface of an n-type
gallium-arsenide wafer. At the initial growth temperature,
the silicon atoms in the dopant replace some of the gallium atoms in the crystal lattice. In so doing, they contribute an excess electron to the bond. This results in the
grown layer being n-type. During the growth, the temperature is systematically reduced. At a certain critical
temperature, the silicon atoms begin to replace some of
the arsenic atoms in the crystal. This removes an electron
from the bond, resulting in the formation of a p-type layer.
As a finished diode, the entire surface, as well as the four
sides, radiate light. The characteristic wavelength of this
type of device is 940 nm, and it typically radiates a total
power of3.0 mW at 100 mA forward current. It is relatively
slow with turn-on and turn-off times on the order of
150 ns. The non-directionality of its emission makes it a
poor choice as a light source for use with optical fibers.
The planar diffused LED is formed by controlled diffusions of zinc into a tellurium-doped n-gallium-arsenide
wafer. A finished diode has a typical power output of
500 !-'W at a wavelength of 900 nm. Turn-on and turn-off
times are usually around 15-20 ns. The emission pattern
is lambertian, similar to the grown junction LED above.
nGaAs
n AlGaAs
pAIGaAs
pAlGaAs
nGaAs
pGaAs
Figure 21. Planar Heterojunction LED
Both of the above structures, although they can be used
in fiber optics, are not optimized for the purpose of coupling into small fibers. Several variations of LED structures are currently used to improve the efficiency of light
coupling into fibers. The two basic structures for fiber
optic LEDs are surface emitting and edge emitting.
Surface-emitting devices are further broken down to
planar and etched-well devices. The material used for
these devices could be gallium-arsenide or any material
which exhibits efficient photon-generating ability. The
most common material in use today is the ternary crystal
aluminum-gallium-arsenide. It is used extensively
because it results in very efficient devices and has a characteristic wavelength around 850 nm 4 at which many
fibers give lowest attenuation. (Many fibers are even better around 1300 nm, but the materials technology for
LEDs at this wavelength -lnGaAsP - is still on the front
end of the learning curve; and devices are very
expensive.)
4This is adjustable by varying the mix of aluminum in the aluminumgallium-arsenide crystal.
p EPITAXIAL LAYER
n EPITAXIAL LAYER
n TYPE SUBS11IATE
a. EPITAXIAllY GROWN SURFACE lED
b. PLANAR DIFFUSED SURFACE LED
Figure 20. Simple LED Structures
a. Epitaxially Grown
b. Planar Diffused
11-66
AN846
PLANAR FIBER OPTIC LED
The planar heterojunction LED is somewhat similar to
the grown junction LED of Figure 20a. Both utilize the
rtquid-phase epitaxial process to fabricate the device. The
LED shown in Figure 21 is a heterojunction aluminumgallium-arsenide structure. The geometry is designed so
that the device current is concentrated in a very small
area of the active layer. This accomplishes several things:
(1) the increase in current density makes for a brilliant
light spot; (2) the small emitting area is well suited to
coupling into small core fibers; and (3) the small effective
area has a low capacitance and, thus, higher speed.
In Figure 21, the device appears to be nothing more
than a multilayer version of the device in Figure 20a with
a top metal layer containing a small opening. However,
as the section view of AA shows in Figure 22, the internal
construction provides some interesting features. To
achieve concentration of the light emission in a small
area, a method must be incorporated to confine the current to the desired area. Since the individual layers are
grown across the entire surface of the wafer, a separate
process must be used to confine the current. First an
n-type tellurium-doped layer is grown on a zinc-doped
p-type substrate. Before any additional layers are grown,
a hole is etched through the n-Iayer and just into the
substrate. The diameter of the hole defines the ultimate
light-emitting area. Next, a p-type layer of AIGaAs is
grown. This layer is doped such that its resistivity is quite
high; this impedes carrier flow in a horizontal direction,
but vertical flow is not impeded since the layer is so thin.
This ensures that current flow from the substrate will be
confined to the area of the etched hole. The next layer
to be grown is the p-type active layer. The aluminumgallium mix of this layer gives it an energy gap corresponding to 850 nm wavelength photons. The actual P-N
junction is then formed by growth of n-type telluriumdoped aluminum-gallium-arsenide. The doping and
aluminum-gallium mix ofthis layer is setto give it a larger
energy gap than the p-Iayer just below it. This makes it
essentially transparent to the 850 nm photons generated
below. A final cap layer of gallium-arsenide is grown to
enable ohmic contact by the top metal. The end result is
an 850 nm planar LED of small emission area. The radiation pattern is still lambertian, however.
r
METAL
n AIGaAs
pAIGaAs
=1"""
::= 2±
un
-
pAIGaAs
n GaAs
p GaAs
Figure 22. Section AA Of Planar Heterojunction LED
If a fiber with a core equal in area to the emission area
is placed right down on the surface, it might seem that
all the emitted light would be collected by the fiber; but
since the emission pattern is lambertian, high order mode
rays will not be launched into the fiber.
OPTICAL
FIBER
EMITTING AREA
Figure 23. Increasing Light Coupling
With A Microsphere
There is a way to increase the amount of light coupled.
If a spherical lens is placed over the emitting area, the
collimating effect will convert high order modes to low
order modes (see Figure 23).
ETCHED-WELL SURFACE LED
For data rates used in telecommunications (100 MHz).
the planar LED becomes impractical. These higher data
rates usually call for fibers with cores on the order of
50-62 /Lm. If a planar LED is used, the broad emission
pattern of several hundred micro-meters will only allow
a few percent of the power to be launched into the small
fiber. Of course, the emission area of the planar device
could be reduced; but this can lead to reliability problems. The increase in current density will cause a large
temperature rise in the vicinity of the junction, and the
thermal path from the junction to the die-attach header
(through the confining layer and substrate) is not good
enough to help draw the heat away from the junction.
Continuous operation at higher temperature would soon
increase the non-radiative sites in the LED and the efficiency would drop rapidly. If the chip is mounted upside
down, the hot spot would be closer to the die-attach surface; but the light would have to pass through the thick
substrate. The photon absorption in the substrate would
reduce the output power significantly. A solution to this
problem was developed by Burris and Dawson, of Bell
Labs. The etched-well, or "Burrus" diode, is shown in
Figure 24.
The thick n-type substrate is the starting wafer. Successive layers of aluminum-gallium-arsenide are grown
epitaxially on the substrate. The layer functions (confinement, active, window) are essentially the same as in
the planar structure. After the final p-type layer (contact)
is grown, it is covered with a layer of Si02. Small openings
are then cut in the Si02 to define the active emitting area.
Metal is then evaporated over the wafer and contacts the
p-Iayer through the small openings. The final processing
consists of etching through the substrate. The etched
11-67
AN846
METAL
t=~:s;:==~tt:~===~* n GaA. ISUBSTRATEI
METAL
-J~~~~~~Z3~~~~~
pnAIGaAslWINDOWI
AIGaAs ICONFINEMEND
SiOz
Ibl
lal
Figure 24. Burrus, Or Etched Well, LED:
(a) Device
(b) Crossection at AA
wells are aligned over the active areas defined by the
Si02 openings on the underside of the wafer and remove
the heavily-photon-absorptive substrate down to the window layer. As an indication of the delicacy of this operation, it requires double-sided alignment on a wafer
about 0.1 mm thick with a final thickness in the opening
of about 0.025 mm.
The radiation pattern from the Burrus diode is still lambertian. However, it has a remarkably-small emitting area
and enables coupling into very small fibers (down to
50 I'm). The close proximity of the hot spot (0.005 mm)
to the heatsink at the die attach makes it a reliable
structure.
Several methods can be used for launching the emitted
power into a fiber. These are shown in Figure 25.
The Burrus structure is superior to the planar for coupling to small fibers «100 I'm) but considerably more
expensive due to its delicate structure.
emits a more directional pattern is the edge-emitting
diode. This is shown in Figure 26. The layer structure is
similar to the planar and Burrus diodes, but the emitting
area is a stripe rather than a confined circular area. The
emitted light is taken from the edge of the active stripe
and forms an elliptical beam. The edge-emitting diode is
quite similar to the diode lasers used for fiber optics.
Although the edge emitter provides a more efficient
source for couping into small fibers, its structure calls for
significant differences in packaging from the planar or
Burrus.
PHOTO DETECTORS
PIN PHOTODIODES
Just as a P-N junction can be used to generate light, it
can also be used to detect light. If a P-N junction is
reverse-biased and under dark conditions, very little current flows through it. However, when light shines on the
device, photon energy is absorbed and hole-electron
pairs are created. If the carriers are created in or near the
depletion region at the junction, they are swept across
the junction by the electric field. This movement of charge
EDGE-EMITTING LED
The surface structures discussed above are lambertian
sources. A variation of the heterojunction family that
U
\0/
lal
Ibl
lei
Figure 25. Fiber Coupling To A Burrus Diode:
(a) Standard Fiber Epoxied in Well.
(b) Fiber with Balled End Epoxied in Well.
11-68
(c) Microlens Epoxied in Well.
AN846
METAL - - - - - _....
Si02
p GaAs ICONTACTI
PAIGaAsICO~F~IN~EM:E:NT~I;~~~~~~~~~~~~
n AIG,A. IACTIVEI
nAIGaAs
n GaA. ISUBSTRATEI
METAl----/
lal
Ibl
Figure 26. Edge Emitting LED:
(a) Structure
(b) Beam Pattern
carriers across the junction causes a current flow in the
circuitry external to the diode. The magnitude of this current is proportional to the light power absorbed by the
diode and the wavelength. A typical photodiode structure
is shown in Figure 27, arid the IV characteristic and spectral sensitivity are given in Figure 28.
In Figure 28a, it is seen that under reverse-bias conditions, the current flow is a noticeable function of light
power density on the device. Note that in the forwardbias mode, the device eventually acts like an ordinary
forward-biased diode with an exponential IV characteristic.
Although this type of P-N photodiode could be used
as a fiber optic detector, it exhibits three undesirable features. The noise performance is generally not good
enough to allow its use in sensitive systems; it is usually
not fast enough for high-speed data applications; and
due to the depletion width, it is not sensitive enough. For
example, consider Figure 29. The depletion is indicated
by the plot of electric field. In a typical device, the p-anode
is very heavily doped; and the bulk of the depletion
region is on the n-cathode side of the junction. As light
shines on the device, it will penetrate through the pregion toward the junction. If all the photon absorption
takes place in the depletion region, the generated holes
and electrons will be accelerated by the field and will be
quickly converted to circuit current. However, holeelectron pair generation occurs from the surface to the
back side of the device. Although most of it occurs within
the depletion region, enough does occur outside this
region to cause a problem in high-speed applications.
This problem is illustrated in Figure 30. A step pulse of
light is applied to a photodiode. Because of distributed
capacitance and bulk resistance, an exponential response
by the diode is expected. The photocurrent waveform
shows this as a ramp at turn-on. However, there is a
distinct tail that occurs starting at point "a." The initial
ramp up to "a" is essentially the response within· the
depletion region. Carriers that a regenerated outside the
depletion region are not subject to acceleration by the
high electric field. They tend to move through the bulk
by the process of diffusion, a much slower travel. Eventually, the carriers reach the depletion region and are
sped up. The effect can be eliminated, or at least substantially reduced by using a PIN structure. This is shown
in Figure 31, and the electric field distribution is shown
in Figure 32. Almost the entire electric field is across the
DIFFUSED PREGION
Ir;.====i~~iiC~-
METAL
ANODE
CONTACT
I
p
Ibl
lal
Figure 27. PN Photodiode:
(a) Device
(b) Section View at AA
11-69
AN846
RESPONSIVITY
[bl
INCREASING INCIDENT LIGHT LEVEL
O.BBl'm
Figure 28. Characteristics Of A PN Photodiode:
(a) I-V Family
intrinsic (I) region and very few photons are absorbed in
the p- and n-region. The photocurrent response in such
a structure is essentially free of the tailing effect seen in
Figure 30.
In addition to the response time improvements, the
high resistivity I-region gives the PIN diode lower noise
performance.
The critical parameters for a PIN diode in a fiber optic
application are:
_
(b) Spectral Sensitivity
1.
2.
3.
4.
Responsitivity;
Dark current;
Response speed;
Spectral response.
Responsivity is usually given in amps/watt at a particular wavelength. It is a measure of the diode output current for a given power launched into the diode. In a system, the designer must then be able to calculate the
INPUT
LIGHT
LEVEL
DIRECTION
Of
UGHT SIGNAL
I
I
I
TIME
I"l"o--+- JUNCTION
I
I
I
I
~
PHOTO·
CURRENT
\
DEPLETION REGION
Figure 29. Electric Field In A Reverse-Biased
PN Photodiode
TIME
Figure 30. Pulse Response Of A Photodiode
11-70
AN846
R(900)
=
0.78
0.96 R(850)
=
0.81 R(850)
SHALLOW DIFFUSED
/
pREGIDN
/ '\
90
80
70
~
6{)
I
40
is
30
~
ll'
/
\
E
t
Figure 33. Relative Spectral Response
MFOD1100 PIN Photodiode
Response Speed determines the maximum data rate
capability of the diode; and in conjunction with the
response of other elements of the system, it sets the
maximum system data rate. 5
Spectral Response determines the range, or system
length, that can be achieved relative to the wavelength
at which responsivity is characterized. For example, consider Figure 33. The responsivity of the MFOD1100 is
given as 0.3 AIW at 850 nm. As the curve indicates, the
response at 850 nm is 96 percent of the peak response.
If the diode is to be used in a system with an LED operating at 900 nm, the reponse (or system length) would
be:
50evice capacitance also impacts this. See "Designer's Guide to FiberOptic Data Links" listed in Bibliography.
\
/
1\
20
L
o
power level coupled from the system to the diode (see
AN-804, listed in Bibliography).
Dark Current is the thermally-generated reverse leakage current in the diode. In conjunction with the signal
current calculated from the responsivity and incident
power, it gives the designer the on-off ratio to be
expected in a system.
1\
\
/
so
10
0.2
Figure 31. PIN Diode Structure
(13)
,
100
~
0.24 AIW
=
'\.
........
0.3
0.4
O.S
0.6
0.7
0.8
0.9
1.1
1.2
A, WAVELENGTH Il'ml
Figure 32, Electric Field Distribution
In A PIN Photodiode
INTEGRATED DETECTOR PREAMPLIFIERS
The PIN photodiode mentioned above is a high output
impedance current source, The signal levels are usually
on the order of tens of nanoamps to tens of microamps,
The signal requires amplification to provide data at a
usable level like T2L In noisy environments, the noiseinsensitive benefits of fiber optics can all be lost at the
receiver connection between diode and amplifier. Proper
shielding can prevent this, An alternative solution is to
integrate the follow-up amplifier into the same package
as the photo diode, This device is called an integrated
detector preamplifier (IDP). An example of this is given
in Figure 34.
Incorporating an intrinsic layer into the monolithic
structure is not practical with present technology, so a
P-N junction photodiode is used. The first two transistors
form a transimpedance amplifier. A third stage emitter
follower is used to provide resistive negative feedback,
The amplifier gives a low impedance voltage output
which is then fed to a phase splitter. The two outputs are
coupled through emitter followers.
The MFOD2404 IDP has a responsivity greater than
23 mV//LW at 850 nm. The response rise and fall times
are 50 ns maximum, and the input light power can go as
high as 30 /LW before noticeable pulse distortion occurs,
Both outputs offer a typical impedance of 200 n.
The IDP can be used directly with a voltage comparator
or, for more sophisticated systems, could be used to drive
any normal voltage amplifier, Direct drive of a comparator is shown in Figure 35,
A FIBER OPTICS COMMUNICATION SYSTEM
Now that the basic concepts and advantages of fiber
optics and the active components used with them have
been discussed, it is of interest to go through the design
of a system. The system will be a simple point-to-point
61n a simplex system, a single transmitter is connected to a single
receiver by a single fiber. In a half duplex system, a single fiber provides
a bidirectional alternate signal flow between a transmitter/receiver pair
at each end. A full duplex system would consist of a transmitter and
receiver at each end and a pair of fibers connecting them.
11-71
AN846
~--------------------------------------------------,
Vee
INVERTED
OUTPUT
NON·INVERTED
OUTPUT
GND
L--------------------------------------------------",--O
SHIELD eASE
Figure 34. Integrated Detector Preamplifier
application operating in the simplex S mode. The system
will be analyzed for three aspects:
1. Loss budget;
2. Rise time budget;
3. Data encoding format.
The system will link a transmitter and receiver over a
distance of 1000 meters and will use a single section of
fiber (no splices). Some additional interconnect loss
information is required}
1. Whenever a signal is passed from an element with
an NA greater than the NA of the receiving element, the loss incurred is given by:
NA Loss = 20 log (NA1/NA2)
(14)
where; NA 1 is the exit numerical aperture of the
signal source;
where NA2 is the acceptance NA of the element
receiving the signal.
2. Whenever a signal is passed from an element with
a cross-sectional area greater than the area of the
receiving element, the loss incurred is given by:
Area Loss = 20 log (Diameter l/Diameter 2) (15)
where: Diameter 1 is the diameter of the signal
source (assumes a circular fiber port);
where: Diameter 2 is the diameter of the element
receiving the signal.
3. If there is any space between the sending and receiving elements, a loss is incurred. For example: an
LED with an exit N.A. of 0.3 will result in a gap loss
of 0.7 dB if it couples into a fiber over a gap of
0.1 mm.
4. If the source and receiving elements have their axes
offset, there is an additional loss. This loss is also
LOSS BUDGET
If no in-line repeaters are used, every element of the
system between the LED and the detector introduces
some loss into the system. By identifying and quantifying
each loss, the designer can calculate the required transmitter power to ensure a given signal power at the
receiver, or conversely, what signal power will be
received for a given transmitter power. The process is
referred to as calculating the system loss budget.
This sample system will be based on the following
individual characteristics:
Transmitter: MFOEll00 series, characteristics as in
Figure 3S.
Fiber:
Silica-clad silica fiber with a core diameter of 100 ILm, step index multimode;
7.0 dB/km attenuation at 850 nm; N.A. of
0.29 and a 3.0 dB bandwidth of 100 MHzkm.
Receiver:
MFOD2404, characteristics as in Figure
37.
7For a detailed discussion of all these loss mechanisms, see Reference
11-72
AN846
+5V
T
10
lOOk
l'F
2.2k
DATA
OUTPUT
I
MFOD2404
'I'F
lM311N
Figure 35. Simple FlO Data Receiver Using lOP And A Voltage Comparator
dependent on the separation gap. For an LED with
an exit N.A. of 0.3, a gap with its receiving fiber of
0.1 mm, and an axial misalignment of 0.035 mm,
there will be a combined loss of 1.0 dB.
5. If the end surfaces of the two elements are not parallel, an additional loss can be incurred. If the nonparallelism is held below 2-3 degrees, this loss is
minimal and can generally be ignored.
6. As light passes through any interface, some of it is
reflected. This loss, called Fresnel loss, is a function
ofthe indices of refraction ofthe materials involved.
For the devices in this example, this loss is typically
0.2 dB/interface.
The system loss budget is now ready to be calculated.
Figure 38 shows the system configuration. Table 2 presents the individual loss contribution of each element in
the link.
assumes that the junction temperature is maintained at
25°C. The power launched is then converted to a reference level relative to 1.0 mW:
(16)
PL
(17)
dB
-12.2 dBm
(18)
PR = PL - loss
-12.2 - 8.4
=
-20.6 dBm
(19)
This reference level is now converted back to absolute
power:
PR
=
10A( - 20.6 I 10) mW
= 0.0087
mW
(20)
Based on the typical responsivity of the MFOD2404
from Figure 37, the expected output signal will be:
Vo
dB
dB
dB
dB
=
The power received by the MFOD2404 is then calculated:
Table 2.
Fiber Optic Link Loss Budget
Fiber Attenuation (1.0 km) ................ 7.0
Fiber Exit Fresnel Loss ................... 0.2
Receiver Gap and Misalignment Loss ........ 1.0
Detector Fresnel Loss .................... 0.2
Fiber to Detector N.A. Loss. . . . . . . . . . . . . . .. 0
Fiber to Detector Area Loss. . . . . . . . . . . . . . .. 0
Total Path Loss ........................ 8.4
PL = 10 log (0.06 mW/1.0 mW)
=
(35 mV/I-'W)(B.7 I-'W)
= 304 mV
(21)
As shown in Figure 37, the output signal will be typically seven hundred times above the noise level.
In many cases, a typical calculation is insufficient. To
perform the worst-case analysis, assume that the signalto-noise ratio at the MFOD2404 output must be 20 dB.
Figure 37 shows the maximum noise output voltage is
1.0 mY. Therefore, the output Signal must be 10 mY. With
a worst-case responsivity of 23 mV/I-'W, the received
power must be:
In this system, the LED is operated at 100 mAo Figure
36 shows that at this current the instantaneous power
launched into a 100 I'm fiber is greater than 60 I-'W. This
11-73
PR
=
VoiR = 10 mV/23 mV/I-'W = 0.431-'W
(22)
PR
=
10 log (0.00043 mW/1.0 mW)
(23)
=
-
34 dBm
MOTOROLA
.SEMICONDUCTOR ....................................
MFOE1100, MFOE1101, MFOE1102
TECHNICAL DATA
Fiber Optics -
MFOE1100
MFOE1101
MFOE1102
High Performance Family
Infrared LED
"TI
<:>
HERMETIC FAMilY
INFRARED LED
I~1~~~-O.OIJ,dVC+-+-+-
51
!'''"ll!illililll'j!!l1I1i1i
,~;~~~:o ~
..,
2
-t-+--+-+--+~
5
10
20
50
100
if,INSTANTANEOUsFORWARDcURRENTlmAI
:>J
Symbol
Value
Unit
2.27
'"
mWI"C
'c
'c
.~
'R
Continuous
'F
Total Device Diss!pation (a TA" 2S'C
Derate above 2S'C
Po
Operating Temperature Range
TA
-55to+125
Tstg
-65to+150
Storage Temperature Range
mW
~
~
C 120
il00
~
THERMAL CHARACTERISTICS
Ch.rlCtelistic$
ELECTRICAL CHARACTERISTtCS
nA
:r
Total Capacitance (VR
Symbol
Unit
Typ
':1 pj 1 1 1 1 1 P--J
20
15
10
5
0
5
10
15
V(BR)R
Forward Voltage (IF .. 100 rnA)
VF
0 V, f = 1 MHzl
,F
CT
0
25
50
75
100
TJ,JUNCTIONlEMPERATURercl
I
I---
Flgure 3. Radill1ntensity Distribution
2(1
,
1
----
:
PULSE ONLY
-MSEORocl
'
1
SO
00
,,~
~
.. 2S"C)
Charlc:teristie
~
CASE 210A-Ol
METAL
'JA
~
n
Symbol
Thermal Resistance, Junction to Amb!(mt
-25
Figure 2. Power Output "ersus
Junction Temperature
versus Forward Current
Rating
Reverse Current
Reverse Breakdown Voltage (lR .. 100 MA)
'~"
PULSE OR OC
~
MAXIMUM RATINGS
Forward Current -
~
~
I-.-- - - - - PULSEONLV
I--
Agur. 1. Normalized Output Power
~
II>
(f)
FIBER OPTICS
Response - Digital Data to 30 Mbaud (NRZI Guaranteed
High launch Power
Hermetic Package
Internal Lensing Enhances Coupling Efficiency
Complements All Motorola Fiber Optics Detectors
Compatible with AMP #228756-1, Amphenol #905-138-5001 and Deutsch 3146-04
Receptacles Using Motorola Alignment Bushing MFOA06 (Included)
(f)
.'i'c"
~
~
.. designed for fiber optics applications reQuiring high-power and medium response
time.
e
•
•
•
•
•
a::
I
.
,
01
!
/
I,'
I
lL
......
1
Vf,FORWAROVOLTAGfIVOLTS)
Figure 4. Forward Current "ersus
Forward VolUge
EIect:rocaIBandwidtn,f!gure6
(IF" 80 mAdc, measured 1 MHz to 30 MHz)
Symbol
Po
MFOE1100
MFOE1101
MFOEll02
Power Launched. Figure 7
(IF'" l00mM
Pl
60(-1221
120(-92)
1801-75)
I
ILW(d8m)
HdBl·:1111111111
1 240 1=6.21
360(-4.51
f,jlllllllllllllill
NumericalApertureolOutputPort(al -lOdB), Figure 3
(250 ... m [10mi1J d!ameterspot)
Wavelength of Peak EmLssion (a tOO mAde
Spectral Line Half Width
Optical Rise and Fall Times, Fillure
(IF = 100 mAdc)
p
810
t,
"Infltlllletl ,n coml>allb16 matBI connecto, lIous,nll",i\1\ Moto,ola alignment bush ,ng
830
A,WAVEL£NGTH(nm)
Figure 5. SpectrIIl Olrtput versus
Wa"e\ength
10
100
f.fREQUfNCYIM~1
Figure 6. Nonn.lized Output Power
~rsus Frequency
»
z
CD
,J::o.
0')
MOTOROLA
.SEMICONDUCTOR . . . . . . . . . . . . . . . . . . . . . . . .. .
MFOD2404
TECHNICAL DATA
: - - - - - - - - - - - - - - - - - - - - , Vee
IMFOD24041
Fiber Optics - High Performance Family
Photo Detector
l
:I=:
HERME11C FAMILY
FIBER OPTICS
which also provide excellent RFI immunity. The output of the device is low impedance to
provide even less sensitivity to stray interference. The MFOD2404 has a 300 ~m (12 mil)
optical spot with a high numerical aperture.
...
ca"
e
;
...:""
-L
-L
~
cs
i
~
6r
L ____ - -
Supply Voltage
-
-
-
-
-
-
-
__ NONINYERTlN6
Symbol
~
Oulescent de Output Voltage (Noninvening Output)
v,
OuiescentdcOutputVohage (lnvemng Output}
V,
Symbol
U."
VCC
v,",
TA
"C
92BD
-=-
Min
Conditions
Signal·to-Noise Ratio
Circuit A
0.'
0.6
Circuit B
!
NA
S..
Maximum Input Power for Negligible DIstortion
in Output Pulse {Vee - 5 V. Note 2}
~~
~1~lmVI~W
0.5
PULSE
GENERATOR
pw _
"
.W
1 JOQOOO"~
J.
.J
Resistive Load {Either Output}
R,
Ohms
C,
oF
Input Wavelength
2. Pawet IBllnclled into SMArypedevtee I1!ceptacte.
,..
1"'1'"
~-=-NONINVERTING
INVERTING
'O,.w-50ns~
o~OPTICAlPOW!;R
~CHEDIHTO
PTlCALINPUTPORT
vee
Capacitive load (Either Output)
Note&;I.MlI'IoIIPUrfldonei!heroul1l"r{lfngle-ended).
~
Volts
RECOMMENDED OPERATING CONDmONS
Supply Voltage
40
50
8J
70
6Q
•
, _............ ""..".... .... 'u
,,,"''''''...... '''''....,.
....
....:;
,l:!=::::e 'j.(lfil~~J.~
.."
"wI
""wl
".~
.....
".'
'
. .
Volts
3.3
.W
= I /loW peak (Note 2)
3D
CASE 2,00..,
METAl
tr·tl
Iii- P;n
20
Test Circuit A
Sensitivity {10 Mbls NRZ. BER ~ 10-9}
Numerical Aperture of Input Port (lOO,.m [12 mil[ diamMer spot)
RF
_t.~---'-
U....
Typ
VNO
Pulse Response
10
V"'--1m
'BOONTON
DCYOlH
OPTICAL CHARACTERISTICS
,\m850nm
Yq:,"-
UE:;=;=EEEEi:EEEE
1
I
6
Y
'CC
Responsivity {Vce ~ !i V. P - 2,.W}
{Note I}
;.
--
Figure 2. Typical PerformUCI versus Tempenture
MIWYOLTMETER
Power Supply Current
Icc~-
....
. __ .
%
ELECTlUCAl CHARACTERtSnCS (VCC .. 5 V. TA - 25'C)
RMS Noise OutpUt
I
_.JGNDICASI:
0.6
1 . ,],
T"
ChMacterfstic
-
__
I·i! D.B
::~
OUTUNE DIMENSIONS
'''ERnoo
Storage TemperBture Rilnge
-
,.~
=-:-
~~ .......
METAL
Opereting TemperatuTe Rilnge
-
_
TEMPfRATURE.'C
~"OO4'
-.
MAXIMUM RATINGS
-
. r+Vq~_
~~:!
Figure 1. Equlv.lent Schem.tlc
• Performance Matched to Motorola Fiber Optics Emitter
• TO-206AC (TO-52) Package - Small, Rugged and Hermetic
• 300 ~m (12 mil) Diameter Optical Spot
en
~
:
• Usable for Data Systems Up to 10 Megabaud
• Dynamic Range Greater than 100"
• Compatible with AMP #228756-1, Amphenol #905-138-5001 Receptacles Using
Motorola Alignment Bushing MFOAOB {lncludedl
:s::
OUTPUT
"l----+--',-=;;
PHOTO DETECTOR
PREAMPlIFIER OUTPUT
;.~
i;U
~St2
',NONINVERTED>~ 1
Preamplifier Output
.. designed as a monolithic integrated circuit containing both detector and preamplifier
for use in medium bandwidth, medium distance systems. It is packaged in Motorola's
hermetic TO·206AC (TO-521 case, and fits directly into standard fiber optics connectors
~ 2
I
I
TestClrcuitB
~
Ij--.lt--
~--Ir
»z
(X)
-'="
en
AN846
4-----------------2~ME~RS----------------~
-
l00mA
MFOD404F
Figure 38. Simplex Fiber Optic Point To Point Link
It is advisable to allow for LED degradation over time.
A good design may include 3.0 dB in the loss budget for
long term degradation.
The link was already performed as worst case, so:
PL
= - 34 dBm + 3.0 dB + 8.4 dB = - 22.6 dBm
PL =
1O~(
- 22.6110) mW = 0.0055 mW = 5.5 p.W
RISE TIME BUDGET
The cable for this system was specified to have a
bandwidth of 100 MHz-km. Since the length of the system
is 1.0 km, the system bandwidth, if limited by the cable,
is 100 MHz. Data links are usually rated in terms of a rise
time budget. The system rise time is found by taking the
square root of the sum of the squares of the individual
elements. In this system the only two elements to consider are the LED and the detector. Thus:
(24)
(25)
Based on the Power Output versus Forward Current
curve in Figure 36, it can be seen that the drive current
(instantaneous forward current) necessary for 5.5 p.W of
power is about 8.0 mA.
Figure 36 also includes a Power Output versus Junction
Temperature curve which, when used in conjunction with
the thermal resistance of the package enables the
designer to allow for higher drive currents as well as
variations in ambient temperatures.
At 8.0 mA drive, the forward voltage will be less than
2.2 V worst case. Using 2.2 V will give a conservative
analysis:
PD
=
(8.0 mA)(2.2 V)
=
1.6 mW
tRS = v'(t R_LED )2
tRs
(26)
(28)
The power derating curve shows a value of essentially 1
due to TJ and TA being so close under these conditions.
Thus the required dc power level needs to be:
PL (dc) = 5.5 p.W
v' (15)2 + (35)2
=
38 ns
(31)
DATA ENCODING FORMAT
If we are transmitting digital data, we can assume an
average duty cycle of 50% so the <1TJ will likely be less
than 2°C. This gives:
= 27°C
=
Total system performance may be impacted by including the rise time of additional circuit elements. Additional
considerations are covered in detail in AN-794 and the
Designer's Guide mentioned earlier (see Bibliography).
<1TJ = (225°CIW)(0.0176W) = 3.9°C
+ <1TJ
(30)
Using the typical values from Figures 36 and 37:
This is well within the maximum rating for operation at
25°C ambient. If we assume the ambient will be 25°C or
less, the junction temperature can be conservatively calculated. Installed in a compatible metal connector:
TJ = TA
+ (tR-detector)2
(29)
As Figure 36 indicates, increasing the drive current to
15 mA would provide greater than 10 p.W launched power
and only increase the junction temperature by about 1°C.
This analysis shows the link to be more than adequate
under the worst case conditions.
In a typical digital system, the coding format is usually
NRZ, or non-return to zero. In this format, a string of ones
would be encoded as a continuous high level. Only when
there is a change of state to a "0" would the signal level
drop to zero. In RTZ (return to zero) encoding, the first
half of a clock cycle would be high for a "1" and low for
a "0." The second half would be low in either case. Figure
39 shows an NARZ and RTZ waveform for a binary data
stream. Note between a-b the RTZ pulse rate repetition
rate is at its highest. The highest bit rate requirement for
an RTZ system is a string of "1 's." The highest bit rate
for an NRZ system is for alternating "1 's" and "O's," as
shown from b-c. Note that the highest NRZ bit rate is half
the highest RTZ bit rate, or an RTZ system would require
twice the bandwidth of an NRZ system for the same data
rate.
However, to minimize drift in a receiver, it will probably
be ac coupled; but if NRZ encoding is used and a long
string of "1 's" is transmitted, the ac coupling will result
in lost data in the receiver. With RTZ data, data is not lost
with ac coupling since only a string of "D's" results in a
11-76
AN846
BINARY DATA
NRZ
vee
Rll
vee
Figure 39. NRZ and RTZ Encoded Data
constant signal level; butthat level is itself zero. However,
in the case of both NRZ and RTZ, any continuous string
of either "l's" or "O's" for NRZ or "O's" for RTZ will
prevent the receiver from recovering any clock signal.
Another format, called Manchester encoding, solves
this problem, by definition, in Manchester, the polarity
reverses once each bit period regardless of the data. This
is shown in Figure 40. The large number of level transitions enables the receiver to derive a clock signal even
if all "1 's" or all "O's" are being received.
In many cases, clock recovery is not required. It might
appear that RTZ would be a good encoding scheme for
these applications. However, many receivers include
automatic gain control (AGC). During a long stream of
"O's," the AGC could crank the receiver gain up; and
when "1 's" data begin to appear, the receiver may saturate. A good encoding scheme for these applications is
pulse bipolar encoding. This is shown in Figure 41. The
transmitter runs at a quiescent level and is turned on
harder for a short duration during a data "0" and is turned
off for a short duration during a data "1."
Additional details on encoding schemes can be
obtained from recent texts on data communications or
pulse code modulation.
SUMMARY
This note has presented the basic principles that govern the coupling and transmission of light over optical
fibers and the design considerations and advantages of
using optical fibers for communication information in the
form of modulated light.
BINARY DATA
NRZ Vee
MANeHESTERVee
Figure 40. Manchester Data Encoding
11-77
AN846
BINARY DATA
NRZ
PULSE
BIPOLAR
vee
Vee
VerJ2
Figure 41. Pulse Bipolar Encoding
REFERENCES
1. Mirtich, Vincent L.; "A 20-M Baud Full Duplex Fiber
Optic Data Link Using Fiber Optic Active Components." Motorola Application Note AN-794; Phoenix,
Arizona, 1980.
2. Mirtich, Vincent L.; "Designer's Guide to: Fiber-Optic
Data Links." Parts 1, 2, & 3; EDN June 20,1980; August
5, 1980; and August 20, 1980.
3. Palais, Joseph. "Fiber Optic Communications," pp
164-187. Englewood Cliffs, N.J.; Prentice-Hall, Inc.,
1988.
11-78
MOTOROLA
_ SEMICONDUCTOR
APPLICATION NOTE
AN982
Applications of
Zero Voltage Crossing
Optically Isolated Triac Drivers
Prepared by Horst Gempe
INTRODUCTION
The zero-cross family of optically isolated triac drivers
is an inexpensive, simple and effective solution for interface applications between low current dc control circuits
such as logic gates and microprocessors and ac power
loads (120, 240 or 380 volt, single or 3-phase).
These devices provide sufficient gate trigger current
for high current, high voltage thyristors, while providing
a guaranteed 7.5 kV dielectric withstand voltage between
the line and the control circuitry. An integrated, zerocrossing switch on the detector chip eliminates current
surges and the resulting electromagnetic interference
(EMI) and reliability problems for many applications. The
high transient immunity of 5000 V//Ls, combined with the
features of low coupling capacitance, high isolation resistance and up to 800 volt specified VDRM ratings qualify
this triac driver family as the ideal link between sensitive
control circuitry and the ac power system environment.
Optically isolated triac drivers are not intended for
stand alone service as are such devices as solid state
relays. They will, however, replace costly and space
demanding discrete drive circuitry having high component count consisting of standard transistor optoisolators, support components including a full wave rectifier
bridge, discrete transistors, trigger SCRs and various
resistor and capacitor combinations.
This paper describes the operation of a basic driving
circuit and the determination of circuit values needed for
proper implementation of the triac driver. Inductive loads
are discussed along with the special networks required
MT
to use triacs in their presence. Brief examples of typical
applications are presented.
CONSTRUCTION
The zero-cross family consists of a liquid phase EPI,
infrared, light emitting diode which optically triggers a
silicon detector chip. A schematic representation of the
triac driver is shown in Figure 1. Both chips are housed
in a small, 6-pin dual-in-line (DIP) package which provides
mechanical integrity and protection for the semiconductor chips from external impurities. The chips are insulated
by an infrared transmissive medium which reliably isolates the LED input drive circuits from the environment
of the ac power load. This insulation system meets the
stringent requirements for isolation set forth by regulatory agencies such as UL and VDE.
THE DETECTOR CHIP
The detector chip is a complex monolithic IC which
contains two infrared sensitive, inverse parallel, high
voltage SCRs which function as a light sensitive triac.
Gates of the individual SCRs are connected to high speed
zero crossing detection circuits. This insures that with a
continuous forward current through the LED, the detector
will not switch to the conducting state until the applied
ac voltage passes through a point near zero. Such a feature not only insures lower generated noise (EMI) and
inrush (surge) currents into resistive loads and moderate
inductive loads but it also provides high noise immunity
(several thousand V//Ls) for the detection circuit.
DETI:CTOR
LED
Figure 1. Schematic of Zero Crossing Optically Isolated Triac Driver
11-79
AN982
ON STATE
01
BLOCKING
f A2+
VDRM' STATE
IH
I
_____ ...l_
I
A2-
-,---]
I
IH-
BLOCKING STATE
Ql11
I
1
ON STATE
Figure 2. Simplified Schematic of Isolator
Figure 3. Triac Voltage-Current Characteristic
ELECTRICAL CHARACTERISTICS
driver is unlikely. Accidental triggering of the main triac
is a more likely occurrence. Where high dV/dt transients
on the ac line are anticipated, a form of suppression network commonly called a "snubber" must be used to prevent false "turn on" of the main triac. A detailed discussion of a "snubber" network is given under the section
"Inductive and Resistive Loads."
Figure 4 show~ a static dV/dt test circuit which can be
used to test triac drivers and power triacs. The proposed
test method is per EIAINARM standard RS-443.
Tests on the MOC3061 family of triac drivers using the
test circuit of Figure 4 have resulted in data showing the
effects of temperature and voltage transient amplitude
on static dV/dt. Figure 5 is a plot of dV/dt versus ambient
temperature while Figure 6 is a similar plot versus transient amplitude.
A simplified schematic of the optically isolated triac
driver is shown in Figure 2. This model is sufficient to
describe all important characteristics. A forward current
flow through the LED generates infrared radiation which
triggers the detector. This LED trigger current (1FT) is the
maximum guaranteed current necessary to latch the triac
driver and ranges from 5 rnA for the MOC3063 to 15 rnA
for the MOC3061. The LED's forward voltage drop at
IF=30 rnA is 1.5 V maximum. Voltage-current characteristics of the triac are identified in Figure 3.
Once triggered, the detector stays latched in the "on
state" until the current flow through the detector drops
below the holding current (lH) which is typically 100 I'A
At this time, the detector reverts to the "off" (nonconducting) state. The detector may be triggered "on"
not only by 1FT but also by exceeding the forward blocking voltage between the two main terminals (MTl and
MT2) which is a minimum of 600 volts for all MOC3061
family members. Also, voltage ramps (transients, noise,
etc.) which are common in ac power lines may trigger
the detector accidentally if they exceed the static dV/dt
rating. Since the fast switching, zero-crossing switch provides a minimum dV/dt of 500 V//Ls even at an ambient
temperature of 70°C, accidental triggering of the triac
BASIC DRIVING CIRCUIT
Assuming the circuit shown in Figure 7 is in the blocking or "off" state (which means IF is zero), the full ac line
voltage appears across the main terminals of both the
triac and the triac driver. When sufficient LED current (1FT)
is supplied and the ac line voltage is' below the inhibit
voltage (lH in Figure 3), the triac driver latches "on." This
action introduces a gate current in the main triac trig-
15V
SCOPE PROBE 100:1
P8
,
_J<"--"'--~
I
loon
J OUT
0.001 p.F
SIGNAL IN o--'VIflr-f
J1.JL
470n
HV
VOLTAGE APPLIED TO OUT _
-15 V
~% DUTY CYCLE
~16mS-1
~HV
=!
I-TRC
TEST PROCEDURE Turn the D.U.T. on, while applying sufficient dVidt to ensure that it remains on, even after the trigger current is removed.
Then decrease dV/dt until the D.U.T. turns off. Measure TRC, the time it takes to rise to 0.63 HV. and divide 0.63 HV by
TRC to get dV/dt.
Figure 4. Static dV/dt Test Circuit
11-80
AN982
10000
OOOr------------------------TRANSIENT AMPLITUDE
~ 600 V
]:
5000
2-
~
2000
1000
500
25
50
75
TA, AMBIENT TEMPERATURE 1°C)
100
100
200
400
500
600
300
TRANSIENT AMPLITUDE IV)
Figure 5, Static dV/dt versus Temperature
Figure 6, Static dVielt versus Transient Amplitude
gering it from the blocking state into full conduction.
Once triggered, the voltage across the main terminals
collapses to a very low value which results in the triac
driver output current decreasing to a value lower than its
holding current, thus forcing the triac driver into the "off"
state, even when 1FT is still applied.
The power triac remains in the conducting state until
the load current drops below the power triac's holding
current, a situation that occurs every half cycle. The actual
duty cycle for the triac driver is very short (in the 1 to
3 p.s region). When 1FT is present, the power triac will be
retriggered every half cycle of the ac line voltage until
1FT is switched "off" and the power triac has gone
through a zero current point. (See Figure 8).
Resistor R (shown in Figure 7) is not mandatory when
RL is a resistive load since the current is limited by the
gate trigger current (lGT) of the power triac. However,
resistor R (in combination with R-C snubber networks that
are described in the section "Inductive and Resistive
Loads") prevents possible destruction of the triac driver
in applications where the load is highly inductive.
Unintentional phase control of the main triac may happen if the current limiting resistor R is too high in value.
The function of this resistor is to limit the current through
the triac driver in case the main triac is forced into the
non-conductive state close to the peak of the line voltage
and the energy stored in a "snubber" capacitor is discharged into the triac driver. A calculation for the current
limiting resistor R is shown below for a typical 220 volt
application: Assume the line voltage is 220 volts RMS.
Also assume the maximum peak repetitive driver current
(normally for a 10 micro second maximum time interval)
is 1 ampere. Then
R=
V peak
Ipeak
=
220 V2 volts
= 311 ohms
1 amp
One should select a standard resistor value >311 ohms
--- 330 ohms.
The gate resistor RG (also shown in Figure 7) is only
necessary when the internal gate impedance of the triac
or SCR is very high which is the case with sensitive gate
thyristors. These devices display very poor noise immunity and thermal stability without RG. Value of the gate
resistor in this case should be between 100 and 500. The
circuit designer should be aware that use of a gate resistor increases the required trigger current (lGT) since RG
drains off part of IGT. Use of a gate resistor combined
with the current limiting resistor R can result in an unintended delay or phase shift between the zero-cross point
and the time the power triac triggers,
1FT
1fT
-I-_ _-\-_ _-¥-_ _-'--- AC LINE
VOLTAGE
...L.. _ _- \ -_ _
AC
INPUT
TRIAC DRIVER
CURRENT
I ~ IGT + II
...L..---'I====i===,\==="1----'- V- ACROSS
MAIN TRIAC
Figure 7. Basic Driving Circuit Triac and Load
Triac Driver,
Figure 8. Waveforms of a Basic Driving Circuit
11-81
AN982
UNINTENDED TRIGGER DELAY TIME
To calculate the unintended time delay, one must
remember that power triacs require a specified trigger
current (lGT) and trigger voltage (VGT) to cause the triac
to become conductive. This necessitates a minimum line
voltage VTto be present between terminals MTl and MT2
(see Figure 7), even when the triac driver is already triggered "on." The value of minimum line voltage VT is
calculated by adding all the voltage drops in the trigger
circuit:
VT = VR + VTM + VGT·
Current I in the trigger circuit consists not only of IGT but
also the current through RG:
1= IRG + IGT·
Likewise, IRG is calculated by dividing the required gate
trigger voltage VGT for the power triac by the chosen
value of gate resistor RG:
IRG = VGT/RG
Thus, I = VGT/RG + IGT.
All voltage drops in the trigger circuit can now be determined as follows:
VR = I x R = VGT/RG x R + IGT x R = R(VGT/RG
+ IGT)
VTM = From triac driver data sheet
VGT = From power triac data sheet.
IGT = From power triac data sheet.
With VTM, VGT and IGT taken from data sheets, it can
be seen that VT is only dependent on Rand RG.
Knowing the minimum voltage between MTl and MT2
(line voltage) required to trigger the power triac, the unintended phase delay angle ed (between the ideal zero
crossing of the ac line voltage and the trigger point of
the power triac) and the trigger delay time td can be
determined as follows:
2000
200
300
sin-l R(VGT/RG
+
IGT) + VTM
Vpeak
+
=
1500
2000
be remembered that low values of the gate resistor
improve the dV/dt ratinigs of the power triac and minimize self latching problems that might otherwise occur
at high junction temperatures.
SWITCHING SPEED
VGT
The time delay td is the ratio of edto eVpeak (which
is 90 degrees) multiplied by the time it takes the line
voltage to go from zero voltage to peak voltage (simply
1/4f, where f is the line frequency). Thus
td
1000
R10HMSI
Figure 9. Time Delay td versus Current Limiting Resistor R
ed = sin-l VTNpeak
=
500
ed/90 x 1/4f.
Figure 9 shows the trigger delay of the main triac versus the value of the current limiting resistor R for
assumed values of IGT. Other assumptions made in plotting the equation for td are that line voltage is 220 V RMS
which leads to Vpeak = 311 volts; RG = 300 ohms; VGT
= 2 volts and f = 60 Hz. Even though the triac driver
triggers close to the zero cross point of the ac voltage,
the power triac cannot be triggered until the voltage of
the ac line rises high enough to create enough current
flow to latch the power triac in the "on" state. It is apparent that significant time delays from the zero crossing
point can be observed when R is a large value along with
a high value of IGT and/or a low value of RG. It should
The switching speed of the triac driver is a composition
of the LED's turn on time and the detector's delay, rise
and fall times. The harder the LED is driven the shorter
becomes the LED's rise time and the detector's delay
time. Very short 1FT duty cycles require higher LED currents to guarantee "turn on" of the triac driver consistent
with the speed required by the short trigger pulses.
Figure 10 shows the dependency of the required LED
current normalized to the dc trigger current required to
trigger the triac driver versus the pulse width of the LED
current. LED trigger pulses which are less than 100 p.s in
width need to be higher in amplitude than specified on
the data sheet in order to assure reliable triggering of the
triac driver detector.
The switching speed test circuit is shown in Figure 11.
Note that the pulse generator must be synchronized with
the 60 Hz line voltage and the LED trigger pulse must
occur near the zero cross point of the ac line voltage.
Peak ac current in the curve tracer should be limited to
10 mAo This can be done by setting the internal load resistor to 3 k ohms.
11-82
AN982
25
Motorola isolated triac drivers are trigger devices and
designed to work in conjunction with triacs or reverse
parallel SCRs which are able to take rated load current.
However, as soon as the power triac is triggered there is
no current flow through the triac driver. The time to turn
the triac driver "off" depends on the switching speed of
the triac, which is typically on the order of 1-2 /LS.
T~.
1\
NbRMAllZEd
PW IN '" 100 p.s
1\
1
_\
'\
1
01
'"
-I5
10
20
LED TRIGGER PULSE WIDTH 1,.,1
50
100
Figure 10. 1FT Normalized to 1FT dc As Specified on the
Data Sheet
PULSE WIDTH CONTROL
OUT
PULSE
GENERATOR
CURVE
TRACER lAC MODEl
AC LINE
SYNC
IF
MONITOR
SCOPE
Figure 11. Test Circuit for LED Forward Trigger Current versus Pulse Width
INDUCTIVE AND RESISTIVE LOADS
Inductive loads (motors, solenoids, etc.) present a
problem for the power triac because the current is not in
phase with the voltage. An important fact to remember
is that since a triac can conduct current in both directions,
it has only a brief interval during which the sine wave
current is passing through zero to recover and revert to
its blocking state. For inductive loads, the phase shift
between voltage and current means that at the time the
current of the power handling triac falls below the holding
current and the triac ceases to conduct, there exists a
certain voltage which must appear across the triac. If this
voltage appears too rapidly, the triac will resume conduction and control is lost. In order to achieve control
with certain inductive loads, the rate of rise in voltage
(dV/dt) must be limited by a series RC network placed in
parallel with the power triac. The capacitor Cs will limit
the dV/dt across the triac.
The resistor Rs is necessary to limit the surge current
from Cs when the triac conducts and to damp the ringing
of the capacitance with the load inductance LL. Such an
RC network is commonly referred to as a "snubber."
Figure 12 shows current and voltage wave forms for
the power triac. Commutating dV/dt for a resistive load
is typically only 0.13 V//Ls for a 240 V, 50 Hz line source
and 0.063 V//Lsfor a 120 V,60 Hz line source. For inductive
loads the "turn off" time and commutating dV/dt stress
are more difficult to define and are affected by a number
of variables such as back EMF of motors and the ratio of
inductance to resistance (power factor). Although it may
appear from the inductive load that the rate or rise is
extremely fast, closer circuit evaluation reveals that the
commutating dV/dt generated is restricted to some finite
value which is a function of the load reactance LL and
the device capacitance C but still may exceed the triac's
critical commutating dV/dt rating which is about 50 V//Ls.
11-83
AN982
It is generally good practice to use an RC snubber network
across the triac to limit the rate of rise (dV/dt) to a value
below the maximum allowable rating. This snubber network not only limits the voltage rise during commutation
but also suppresses transient voltages that may occur as
a result of ac line disturbances.
There are no easy methods for selecting the values for
Rs and Cs of a snubber network. The circuit of Figure 13
is a damped. tuned circuit comprised of Rs. Cs• RL and
LL. and to a minor extent the junction capacitance of the
triac. When the triac ceases to conduct (this occurs every
half cycle cif the line voltage when the current falls below
the holding current). the load current receives a step
impulse of line voltage which depends on the power factor of the load. A given load fixes RL and LL; however.
the circuit designer can vary Rs and Cs. Commutating
dV/dt can be lowered by increasing Cs while Rs can be
increased to decrease resonant "over ringing"of the
tuned circuit. Generally this is done experimentally
beginning with values calculated as shown in the next
section and. then. adjusting Rs and Cs values to achieve
critical damping and a low critical rate of rise of voltage.
Less sensitive to commutating dV/dt are two SCRs in
an inverse parallel mode often referred to as a back-toback SCR pair (see Figure 15). This circuit uses the SCRs
in an alternating mode which allows each device to
recover and turn "off" during a full half cycle. Once in
the "off" state. each SCR can resist dV/dt to the critical
value of about 100 V/p.s. Optically isolated triac drivers
are ideal in this application since both gates can be triggered by one triac driver which also provides isolation
between the low voltage control circuit and the ac power
line.
It should be mentioned that the triac driver detector
does not see the com mutating dV/dt generated by the
inductive load during its commutation; therefore. the
commutating dV/dt appears as a static dV/dt across the
two main terminals of the triac driver.
Figure 12. Current and Voltage Waveforms During Commutation
--------------.IIFlONI
--------..,.-----'---IFIOFFI
IFIOFFI
,
-/-f---\-+-J"-+-+-++f-'l-+--AC LINE
\
VOLTAGE
I
--+-t----'t-+--+----+--'I-++--+-t--4.-AC LINE
\
VOLTAGE
\
--Jj'--f-"t--+-Jf-+-++-+--J--t--- AC CURRENT
---.F---'-+---I------'t--r-+--+----AC CURRENT
THROUGH
POWER TRIAC
~.....r=='I--==i"'=="'I-+=l~.f-+---4;-VOLTAGE
to
TIME-
ACROSS
POWER TRIAC
\
TIMEInductive Load
Resistive Load
11-84
\
AN982
SNUBBER DESIGN -
THE RESONANT METHOD
If R, Land C are chosen to resonate, the voltage waveform on dV/dt will look like Figure 14. This is the result
of a damped quarter-cycle of oscillation. In order to calculate the components for snubbing, the dV/dt must be
related to frequency. Since, for a sine wave,
VItI = Vp sin wt
dV/dt = Vp w cost wt
dV/dt(max) = Vp w = Vp 27l"f
f =
dV/dt
27TVA(max)
v
- - - - STEP FUNCTION
- - VOLTAGE ACROSS TRIAC
Where dV/dt is the maximum value of off state dV/dt
specified by the manufacturer.
From:
Figure 14. Voltage Waveform After Step Voltage
Rise - Resonant Snubbing
f=_1_
27Tv'[C"
1
C = (27l"f)2L
We can choose the inductor for convenience. Assuming the resistor is chosen for the usual 30% overshoot:
R =
Ie
RG
RS
AC LINE
Assuming L is 50 JLH, then:
f = (dV/dt)min = 50 V/JLs = 27 kHz
27TVA(max)
27T(294 V)
1
C = (27l"f)2L = 0.69 JLF
R=
Ie
=
Figure 15. A Circuit Using Inverse Parallel SCRs
AC
Cs
,.-----,
Figure 13. Triac Driving Circuit -
with Snubber
11-85
AN982
INRUSH (SURGEICURRENTS
The zero crossing feature of the triac driver insures
lower generated noise and sudden inrush currents on
resistive loads and moderate inductive loads. However,
the user should be aware that many loads even when
started at close to the ac zero crossing point present a
very low impedance. For example, incandescent lamp
filaments when energized at the zero crossing may draw
ten to twenty times the steady state current that is drawn
when the filament is hot. A motor when started pulls a
"locked rotor" 'current of, perhaps, six times its running
current. This means the power triac switching these loads
must be capable of handling current surges without junco
tion overheating and subsequent degradation of its electrical parameters.
Almost pure inductive loads with saturable ferromagnetic cores may display excessive inrush currents of 30
to 40 times the operating current for several cycles when
A
switched "on" at the zero crossing point. For these loads,
a random phase triac driver (MOC3020 family) with special circuitry to provide initial "turn on" of the power triac
at ac peak voltage may be' the optimized solution.
ZERO CROSS, THREE PHASE CONTROL
The growing demand for solid state switching of ac
power heating controls and other industrial applications
has resulted in the increased use of triac circuits in the
control of three phase power. Isolation of the dc logic
circuitry from the ac line, the triac and the load is often
desirable even in single phase power control applications. In control circuits for poly phase power systems,
this type of isolation is mandatory because the common
point of the dc logic circuitry cannot be referred to a
common line in all phases. The MOC3061 family's characteristics of high off-state blocking voltage and high isoC
A
RL
(3 PlACES!
C
LED CURRENT
3 PHASE LINE VOLTAGE
8 AND CSWITCH OFF,
A FOLLOWS
A AND 8 SWITCH ON
CSWITCHES ON
Figure 16. 3 Phase Control Circuit
11-86
AN982
AC
+12V
TEMP. SET
Y. MC33074A
/\/\.
Y. MC33074A
VDOSC
4.7 k
4.7k
=
~ BRIDGE~
I!.V
2 mVI"C
GAIN STAGE
AV = 1000
Vo = 2 VI"C
r
100 k
GND
1. . .
COMPARATOR - - .
... 1 - - - - OSCILLATOR
----Jl·~1
1
VOLTAGE CONTROLLED PULSE WIDTH MODULATOR
I
I
Figure 17. Proportional Zero Voltage Switching Temperature Controller
lation capability make the isolated triac drivers ideal
devices for a simplified, effective control circuit with low
component count as shown in Figure 16. Each phase is
controlled individually by a power triac with optional
snubber network (R s, Cs) and an isolated triac driver with
current limiting resistor R. All LEOs are connected in
series and can be controlled by one logic gate or controller. An example is shown in Figure 17.
At startup, by applying IF, the two triac drivers which
see zero voltage differential between phase A and B or
A and C or C and B (which occu rs every 60 electrical
degrees of the ac line voltage) will switch "on" first. The
third driver (still in the "off" state) switches "on" when
the voltage difference between the phase to which it is
connected approaches the same voltage as the sum voltage (superimposed voltage) of the phases already
switched "on." This guarantees zero current "turn on"
of all three branches of the load which can be in Y or
Delta configuration. When the LEOs are switched "off,"
all phases switch "off" when the current (voltage difference) between any two of the three phases drops below
the holding current of the power triacs. Two phases
switched "off" create zero current. In the remaining
phase, the third triac switches "off" at the same time.
PROPORTIONAL ZERO VOLTAGE SWITCHING
The built-in zero voltage switching feature of the zerocross triac drivers can be extended to applications in
which it is desirable to have constant control of the load
and a minimization of system hysteresis as required in
industrial heater applications, oven controls, etc. A closed
loop heater control in which the temperature of the heater
element or the chamber is sensed and maintained at a
particular value is a good example of such applications.
Proportional zero voltage switching provides accurate
temperature control, minimizes overshoots and reduces
the generation of line noise transients.
Figure 17 shows a low cost MC33074 quad op amp
which provides the task of temperature sensing, amplification, voltage controlled pulse width modulation and
triac driver LED control. One of the two 1N4001 diodes
11-87
AN982
(which are in a Wheatstone bridge configuration) senses
the temperature in the oven chamber with an output signal of about 2 mVrC. This signal is amplified in an inverting gain stage by a factor of 1000 and compared to a
triangle wave generated by an oscillator. The comparator
and triangle oscillator form a voltage controlled pulse
width modulator which controls the triac driver. When
the temperature in the chamber is below the desired
value, the comparator output is low, the triac driver and
the triac are in the conducting state and full power is
applied to the load. When the oven temperature comes
close to the desired value (determined by the "temp set"
potentiometer), a duty cycle of less than 100% is introduced providing the heater with proportionally less
power until equilibrium is reached. The proportional
band can be controlled by the amplification of the gain
stage - more gain provides a narrow band; less gain a
wider band. Typical waveforms are shown in Figure 18.
VUU~IVlJVI/VIJVI'VUUiIlVVLiIlVVL-VVVL_ _Ij'_JWVL-VAC
(ACROSSRLI
TOO COLD
FINE IREG.
I TOO HOT I
FINE REG.
Figure 18. Typical Waveforms of Temperature Controller
11-88
MOTOROLA
-
SEMICONDUCTOR
APPLICATION NOTE
AN1016
Infrared Sensing and Data Transmission
Fundamentals
Prepared by: Dave Hyder
Field Applications Engineer
Many applications today benefit greatly from electrical isolation of assemblies, require remote control, or need to sense
a position or presence. Infrared light is an excellent solution
for these situations due to low cost, ease of use, ready availability of components, and freedom from licensing requirements or interference concerns that may be required by RF
techniques. Construction of these systems is not difficult, but
many designers are not familiar with the principles involved.
The purpose of this application note is to present a "primer"
on those techniques and thus speed their implementation.
THE GENERAL PROBLEM
Figure 1 represents a generalized IR system. The transmitting
portion presents by far the simplest hurdle. All that needs to
be accomplished is to drive the light source such that sufficient
power is launched at the intended frequency to produce adequate reception. This is quite easy to do, and specific circuits
will be presented later.
LIGHT SOURCE
Usually Infrared
~
RECEIVER
Amplification
and Filtering
-
PROCESSING
Data Separation
These contribute to the problem in two ways. First, they produce an ambient level of stimulation to the detector that appears as a dc bias which can cause decreased sensitivity and,
worst of all, saturation in some types of detectors. Second,
they provide a noise level often 60 dB greater than the desired
signal, especially in the form of the 50 or 60 Hz power frequency. Also, recall that the sensitivity of silicon photo detectors extends well into the visible range. This sensitivity,
albeit reduced, causes severe interference since the sources
in this region are often of significant power, e.g., incandescent
lighting and sunlight. In addition to the visible component,
both produce large amounts of infrared energy, especially
sunlight.
Some IR applications are not exposed to this competition,
and for them dc excitation of the source may be adequate.
These include some position sensing areas and slow data links
over short distances.
But the bulk of IR needs require a distance greater than 30
cm, speeds greater than 300 baud, and exposure to interfering
elements. For these needs high-frequency excitation of the
source is necessary. This ac drive permits much easier amplification of the detected signal, filtering of lower frequency
components, and is not difficult to produce at the driving end.
Optical filtering for removal of the visible spectrum is usually
required in addition to the electrical, butthis too is quite simple.
A WORD ABOUT DETECTORS
Figure 1. Simplified IR Sensing/Data Transmission
System
The bulk of the challenge lies in the receiving area, with
several factors to consider. The ambient light environment is
a primary concern. Competing with the feeble IR transmitted
signal are light sources of relatively high power, such as local
incandescent sources, fluorescent lighting, and sunlight.
Figure 2 shows the three basic detection schemes: a phototransistor, a Darlington phototransistor, and a photodiode.
All three produce hole-electron pairs in response to photons
striking a junction. This is seen as a current when they are
swept across the junction by the bias voltage, but they differ
greatly in other respects.
+
+
+
MRD821
lal PHOTOTRANSISTOR
Ibl DARLINGTON PHDTDTRANSISTOR
Figure 2. The Basic Detectors for IR Photosensing
11-89
(cl PHOTO DIODE
AN1016
The most sensitive is the Darlington. The penalties are temperature drift, very-low tolerance to saturation, and speeds,
limited to about 5 kHz (usually much less). Next is the single
transistor, having similar penalties (but to a lesser degree),
with speeds limited to less than 10 kHz. Typically, they are
limited to less than half that number. These two detectors
normally find their use in enclosed environments, where ample
source intensity is available to provide large voltage outputs
without much additional circuitry (their prime advantage).
Their detection area is almost never exposed to ambient light.
In virtually all remote-control applications (implying distance), the diode is the detector of choice. This is due primarily
to its near-freedom from saturation, even in most sunlit environments. The penalty is sensitivity, often in the nanoamp
or Ipw microamp region, but balanced by response speed in
the nanosecond range. This permits transmission frequencies
in the 50-100 kHz area, providing ample data rates, inexpensive
amplification, and easy filtering of noise.
For more information on the internal characteristics of these
devices, see the appropriate section of the Motorola Optoelectronics data book (#DL118/D).
to achieve 10 meters with a data rate of around 5,000 baud
at very modest cost.
The transmission end is easily configured. Figure 3 shows
a simple IR source capable of 50 kHz transmission. Note that
no special techniques are needed to switch the diode at these
frequencies. A burst of high frequency is created for each bit
time in the data being sent: ihis mode of gating a carrier on
and off is known as CW (continuous wave).
SHORT DISTANCES
The main areas of interest are the switch device and the
diode current. Today's IREDs (infrared emitting diodes) are
generally capable of around one ·ampere peak currents, but
applications typically limit this to half that value. Most designs
that use a 50 percent duty cycle square wave switching waveform have diode currents in the 100-500 mA range. It is
important to realize that although IRED output increases linearly with drive current, it drops rapidly with increasing temperature. Therefore, reliability is not the only reason for
resisting the temptation to increase range by driving the IRED
harder. A diode with a 100 mA continuous rating can be reliably
driven with a 200 mA square wave, and so on. It is quite
common to use more than one IRED in series for increasing
output and range, lowering the current requirements, and increasing reliability of the diodes.
The driver device can be a bipolar transistor or a FET. The
bipolar works fine, but requires enough base current for saturation that the driving circuitry often must provide 10-20 mA
or more. This may not be available directly from CMOS devices. Darlingtons solve this problem, but are usually much
too slow. Another solution is an inexpensive logic-level FET
such as the MTP3055EL, its physically smaller cousin, the
MTD3055EL, or a MTP4N06L. This provides plenty of speed
while being driven directly from any CMOS device, with absolute minimum parts count. A resistor (50-500!l) is sometimes
used in series with the gate to moderate the very-high switching speed and noise from high frequency oscillations. The
resistor is usually not needed if the gate is driven from a
medium-speed CMOS gate such as the MCl4081B or
MCl4011UB.
Many applications in position sensing lend themselves well
to the sensitive, if slow, nature of phototransistors. When a
go, no-go situation exists, these provide a simple solution
provided that ambient light is not present at the detector. The
designer must ensure that the system operates even if this
portion of the equipment is exposed, as by opening a hatch
during servicing or final adjustment during production. This is
often achieved via covers, tubes limiting light paths, or that
enough directionality exists in the basic device construction
to provide the needed isolation. Also available for this application are logic-level output devices, usually of the open-collector type, making processor or logic interfacing convenient.
The light source for these uses is chosen primarily by the
distance needed. LEOs work well up to about 5 cm. Above
this, incandescents are often used due to their high output
and ease of drive with low-voltage ac. Fluorescent sources are
seldom adequate due to their "cool" color temperature compared to incandescent. That is, not enough output in the nearinfrared or infrared portion of the spectrum.
Data can be transmitted in these short distance situations,
provided the speeds required are not great. An example is the
electrical isolation of two adjacent PC boards in a rack, with
IR elements facing each other across the short space. Here
the data can be used to drive the LED directly; modulating a
high frequency is not necessary.
Speed and sensitivity are the tradeoff. The resistor used to
develop a voltage can be made larger to provide increased
sensitivity, but speed suffers and tendency toward saturation
increases. Values of 50-200 Il are common, but can be higher.
+
..m~~ ~J~
9
~
50 kHz SQUARE WAVE
MTP3055El
-=
Figure 3. Basic IR Source Drive for CW Operation
THE RECEIVING PROCESS
MODERATE DISTANCES
For the general case of remote control or sensing at distances
greater than 30 cm, the vast majority of applications utilize an
LED source switched at a carrier frequency of 20 kHz to 50
kHz and a diode detector coupled to ac band-limited amplifiers.
Although certainly more complex than the simpler short-distance sensors, today's product offerings make it an easy task
At the receiving end, the first item encountered is an IR
optical filter as shown in Figure 4. This serves the sole purpose
of attenuating the visible portion of the spectrum while leaving
the IR intact. It can be a material specifically designed for the
purpose, such as the Kodak filter series, but is usually an
inexpensive acrylic plastic. This is almost any readily-available
red, non-opaque plastic. Suitability is easily proven by inserting
a sample between an emitter and detector while observing the
11-90
AN1016
The second method is to use explicit high-pass filter circuitry,
but in practice this is seldom needed due to the effectiveness
of the other techniques. A third option is to use a bandpass
amplifier, usually with an LC tank. More discussion of this
later.
After the signal is brought up to a level sufficient for detection, some method must be employed to extract the data.
Most common is a simple peak detector. This detects the
presence of the high-frequency pulses, charging a capacitor
up to a threshold in a few cycles, at which point a comparator
signals the new level. In the absence of a signal (the carrier),
the capacitor discharges until the comparator's lower threshold
is reached, signifying the opposite logic level. Other techniques
are also available, such as the phase-locked loop, whose lockdetect output can be used as the recovered logic-level data.
detector output. The IR signal should be minimally altered.
This filter may be incorporated into the system as a unique
piece of the material in front of the detector, or the entire front
panel of the product may be made of this plastic. Sometimes
lenses are actually molded from it (discussed in a later section).
Jl~
---U t t>-
DATA
EXTRACTION
~
PROCESSING
AMPLIFIER &
IR FILTER
HP OR BP FIlTERING
Figure 4. Basic IR Receiver
MORE ON RECEIVING CIRCUITS
The detector diode behind the filter is usually constructed
as a large-geometry device specifically designed for IR remote
control, and presents a large area simply for more )R energy
absorption or increased aperture. It is not unusual to find the
material used for encapsulation to be red or black, and apparently opaque. The encapsulation serves as an IR filter, as
in the case of the MRD821. Even so, an additional one is usually
employed as mentioned above, often for the cosmetics of the
product.
In addition to visible-light filtering mentioned above, electrical filtering must be applied to greatly attenuate the lowfrequency interference present in both the visible spectrum
and the IR. This is accomplished by three methods. First,
coupling capacitance values are judiciously chosen to begin
rolloff just below the transmitted frequency. This is quite effective since the area of interest is usually about a factor of
103, or some 9 to 10 octaves above the power-line frequencies.
+
Two general methods are used to begin the amplification.
First the diode light current (a few microamps or less) may be
used to develop a voltage across a series resistance, which is
then capacitively coupled to the amplifier using the rolloff of
low frequencies mentioned above, as shown in Figure 5a.
Second, the current may be driven directly into the amplifier,
as in Figure 5b, where the photo current is summed with the
feedback current at the amplifier input. Note that in these and
other figures, the amplifier symbol does not necessarily denote
an actual integrated operational amplifier, but may symbolize
a discrete amplifier.
Figure 6 shows an amplifier system coupled to a bandpass
amplifier centered about 50 kHz. Here the front end is actually
an operational amplifier, used in the mode of Figure 5b. Various
choices for operational amplifiers exist; perhaps the first hinges
Vb
=
Vb
Ibl DIRECT ·COUPLED DIODE FRONT END
1.1 CAPACITIVElY-CDUPLED FRONT END
Figure 5. Front-End Amplifier Options
1 mH*
150
*Toko type 10 PA or equivalent. Available from Digi-Key Corporation, phone IBOO) 344-4539.
Figure 6. Amplifier Chain Showing 50 kHz Bandpass Filter Second Stage
11-91
AN1016
on the supply voltage. Some recent advances in the technology
have greatly increased slew rates and gain-bandwidth products. This has permitted devices that are capable of operation
on a single 5 volt supply, yet can be used in the 50 kHz range.
An example of this is the MC34072 series, whose input common mode range includes ground, permitting the diode or the
other amplifier input to be referenced there. If greater gains
are needed, and higher supply rails are available, the MC34082
series provides slew rates of 25 V I /IS, or twice that of the
MC34083. These operational amplifiers in general do not have
the low-noise performance of discrete versions, with the above
devices being in the 30 nV I $z region. However, the MC330n
provides excellent noise performance of about 4.5 nV/$z at
a similar slew rate on a 5 volt supply, although its common
mode range does not include ground. A simple discrete amplifier example is shown in Figure 7.
Another option that should be considered for data reception
is the MC3373 (Figure 8), which integrates many of the functions already described. This device contains the front-end
amplifier, a negative-peak detector with comparator, and requires only a few extemal components. The amplifier may
have the diode directly connected to it, or ac coupled for
purposes of rolloff. A tuned circuit can be used for the better
noise performance of a band-limited system. Some words of
caution: supply bypassing close to the device, particularly at
the gain-determining impedance (resistance or tuned circuit),
is critical. Without proper bypassing, gain and range suffer.
Also, a higher supply voltage of around 12 volts or so assists
in greater range performance.
The vast majority of IR links in consumer products (VCRs,
TVs) use an LC tank. The inductor is a shielded, adjustable
slug type in the 1-5 mH range. Shielding in ~he form of a metal
can usually encloses the entire subassembly, and the designer
should expect to employ such shielding in most applications
requiring moderate or long distance operation.
Note that in Figures 7, 8, and 9 the bias supply to the
receiving diode is heavily decoupled from the supply via an
RC. Any noise present at this point directly impacts system
noise and sensitivity. Bandwidth is also often limited at the
upper end as an aid in overall noise performance as seen in
Figures 7 and 9. These amplifiers use small capacitors (33 pF,
10 pF, 100 pF) to roll off frequencies above 100 kHz.
+5V
1k
4.7k
MC33072
1k
100
MPS3904.
MPS2222A
-=-
r
100 k
33 pF
Figure 7. Simple Discrete Front End with Op Amp
+ 12 V
4.7 ~F
T
5 VlOGIC OUT
-19
-=Figure 8. IR Receiver Using-the Integrated MC3373
11-92
AN1016
LONG DISTANCES
When the distance to be covered extends beyond 10 meters
or so, other methods must be considered. The methods described below have resulted in ranges of 100 meters or more.
At the transmitting end, most of the options available center
on increasing the power output. One way is to increase the
IRED current, but this is subject to limits as previously discussed. Another solution is to use multiple diodes in series,
often three. Note that this does not require additional supply
current. Multiple diodes also provide one solution to those
applications requiring less directionality, with the IREDs being
slightly misaligned from one another.
The diodes can also be driven much harder, and produce
proportionally higher instantaneous power, if they are pulsed
with a very-short duty cycle. Currents of about an ampere are
common, but for only a few microseconds and with a duty
cycle of 5 percent or less. This also requires modified receiving
techniques.
At the receiving end, most solutions center on increasing
the aperture of the system such that simply more energy is
gathered. Multiple receiver diodes can be connected in parallel,
adding their currents, with the additional possibility of reducing
directionality if needed. Another technique is to add a lens,
with the diode being placed at the focal point. In higher volume
production, this is often molded into a front panel and is usually
of the red filtering plastic mentioned earlier. Some systems
make use of a flat Fresnel lens, being somewhat more difficult
to mount but very effective. They can also be hidden behind
a plastic panel.
Front-end amplifiers superior to the simple operational amplifier or discrete versions already mentioned may be found in
these highest-performance situations. Such an amplifier is
shown in Figure 9, where low-noise transistors are used in a
circuit designed specifically for low-noise applications.
When pulsed sources are used, some encoding scheme is
normally used to transmit the data. One common technique
is to use a single pulse for one edge of a data bit, and two or
more closely spaced pulses to signal the opposite edge. These
are simply differentiated by some flip-flops and a small amount
of timing circuitry. Other schemes use multiple pulses at close
intervals to indicate one logic level, and a differing number to
denote the other.
zz
10 k
.---~----~----~JV~~r--------------.--------~~--~~~~---+lZV
4.71'F
20 k
100 k
47
10 k
ZZO
J
100 l'F
MR0821
~
150
100 pF
lOI'FJ
10 k
Figure 9. High-Performance Discrete Front-End
Amplifier with Special Attention Paid to Noise
11-93
AN1016
One last option is sometimes seen at the end of the amplifier
chain and used for the data detaction. An analog phase-locked
loop circuit can be used to pull a signal from noise and lock
to it if appropriate. This lock signal is then used as the recovered
data stream. One such device, shown in Figure 10, is the EXAR
XR567, a small 8-pin tone dacoder with both Type I and Type
II phase detectors. It is capable of locking to analog signals
in the 25 mV range, and makes/breaks lock at a rate sufficient
for about 5,000 baud with 50-100kHz inputs. The device can
be operated up to about 500 kHz.
An advantage of the all-analog system is that the signal
never needs to be amplified to the point of rail-to-raillimiting.
Thus, system-wida noise potential is decreased. Back-to-beck
diodes or similar methods are normally employed ahead of the
loop input to hold the signal within a few hundred millivolts
to protect against overdrive at close ranges.
CONCLUSION
As can be seen from the above discussion, IR links have
become quite easy to implement. With the basic principles in
mind, the designer should be able to adapt the techniques
mentioned here to his specific system needs.
+5V
4.7k
ANALOG IN FROM ~
AMPLIFIERS ~
LOCK SIGNAL USED
AS RECOVERED DATA
Figure 10. PLL Tone Decoder Used to Recover Data
From Analog
ENCDDER
MC145028
MC145030
-
IR XMIT
CIRCUIT
~
IR RECV
CIRCUIT
r--
DECODER
MC145027
MC145028
MC145030
Figure 11. Utilizing Motorola's Encoders and Decoders
11-94
MOTOROLA
SEMICONDUCTOR
APPLICATION NOTE
Optoisolators for Switching Power Supplies
Prepared by: Larry Hayes
Warren Schultz
Discrete Applications Engineering
spaced minimum and maximum. This is a first-order design
issue because open-loop gain is directly proportional to the
optoisolator's CTA.
Consider a typical 1OO-W flyback power supply. Total loop
gain is found by multiplying the individual gains of each
stage. For this power supply. the loop gain. Av. is equal to
the product of the individual gains of the error amplifier (Ae).
comparator (Ac). power stage (Aps). TL431 (gm) and optoisolator (CTR). Looking at only the TL431 and optoisolator
together. the gain is expressed as:
In switching power supplies. optoisolators usually provide
isolated feedback for the regulation loop. In this application.
they do an excellent job of isolation. minimizing circuit
complexity and reducing cost. The trade-ofts are wide unit-tounit variations in current transfer ratio. noise susceptibility.
and long-term gain stability. But by using devices specifically
designed for power supplies. these deficiencies can be minimized. A new series of devices. MOC8101 through
MOC81 04. combines an application-specific approach with
technology improvements. The result is a significant performance increase in switching power supplies.
The biggest design challenge associated with optoisolators is the large unit-to-unit variation in current-transfer ratio
(CTR). The statistical distribution of CTR within a given lot
is characteristically large. and most standard devices are
specified with only a minimum CTR. or at best .. with a widely
I
ItRll X R12)l (gm)(CTR)
(R5 X R6) l
~Rll +R12cJ
[(R5+ R6)]
ACHOT
ACRET
0---
GND
+15VDC
+15 VDC POWER SUPPLY
0---
RECTIFIERS
AND INPUT/
OUTPUT FILTERS
0
f-----------
r-----
FLYBACK
TRANSFORMER
0---
~
RECTIFIERS
AND FILTERS
IOUTPUT
VOLTAGE
-
115/230
VACINPUT
t5VDC
+5 VDC POWER SUPPLY
f---------Original design of l00-W flyback power supply has a
conventional4N26 optoisola1or in the feadback loop. Pin
60fthe 4N26 is wired to the receiver base and acts ~ke
an anten na to pick up unwanted noise. The new
Motorola M0C810X family of optoisolators replaces the
4N26. eliminates the base lead. and reduces noise
pickup
ERROR AMPUFIER
AND COMPARATOR
--
~
DRIVER
TRANSFORMER
AND POWER SWITCH
R5
I~
II
Figure 1.
RECTIFIERS
AND FILTERS
GATE LEAD
SUSCEPTIBLE
TO NOISE PICKUP
NC
6
R6
5
RS
4Nl6
1
2
3
NC
52~L
REP
Rl
11~
k~
TL431
Rl
E
1
2
4APPUCATION.SPECIFIC 3
OPTOISOLATOR
M0C81 01·MOCHI 04
10o-Watt Flyback Power Supply
11-95
1
GENERAL·PURPOSE
OPTOISOLATOR
~y*
4
~
COM
Noise is further reduced by coplanar die
placement of the LED and phototransistor.
This reduces the internal capacitance to
0.2 pF and minimizes the coupled noise
injected by the optoisolator.
ClEARANCE 0.4"
SPECIAL
"T"LEAOBEND
THICKNESS THROUGH
INSULATION
Figune 2.
Coplanar Die Placement
Plugging in values for the resistors, gm, CTR, and gains
of the other amplifiers, the product yields a loop gain of 7,100
or 77 dB.
When minimum and maximum values for the optoisolator's CTR are factored into this calculation, the results are
eye opening. For the widely used 4N26, the specified
minimum is 0.2, and no maximum is guaranteed. The CTR
can be as high as the upper limit of the supplier's statistical
distribution; thus, values as high as 6.0 are common. Plugging this range back into the open-loop gain calculation
results in a minimum of 3,500 (71 dB) and a maximum of
106,000 (101 dB). Because load regulation is proportional
to open-loop gain, the same 30:1 variation follows through
directly to output performance. In other words, a disturbance
that produces a 1-mV change in the 101 dB supply will
product a 30 mV change in the 71 dB unit.
Motorola Optolsolator CTR
Part Number
Minimum
MOCB10l
0.5
Maximum
O.B
MOCB102
0.73
1.17
MOCB103
1.0B
1.73
MOCB104
1.6
2.56
Current-transfer ratios (CTRs) for the new family of optoisolators have a guaranteed range of values, unlike the 4N26
that had a guaranteed minimum of 0.2, but no maximum.
Designers can now better predict loop gains and overall
control performance.
The new MOC8101 series devices, manufactured specifically for switching supplies, improves the situation by more
than an order of magnitude. Using the MOC8101 as an
example, the minimum CTR of 0.5 and maximum of 0.8
yields an open-loop gain that varies only from 8,850 (79 dB)
to 14,200 (83 dB). With this tight range, the nominal gain
can be adjusted upward appreciably without exceeding the
100 dB maximum limit required for stability. The result is
better regulation, additional gain margin, or a combination
of the two.
General-purpose optoisolators, such as 4N26, use a
5-lead configuration. Here, the optotransistor's base is
pinned out to provide flexibility for the general-purpose user.
However, in switching supplies, the internal chip-to-pin wire
and the external lead together act as an antenna to pick up
switching noise, which is introduced into the feedback loop.
To minimize this problem, noise-decoupling networks are
often added from base to emitter. Another approach is to
cut off the external pin 6 (base) lead, which provides a partial
improvement, but still leaves the internal chip-to-pin
connected inside the package.
The MOC8101 series optoisolators minimizes noise
susceptibilty by eliminating the base connection. Only anode,
cathode, collector, and emitter connections are provided,
resulting in a four-terminal device that is housed in a six-pin
DIP with two unconnected pins. The need for the extra
passive components is eliminated, along with added cost and
complexity.
'
Noise is further minimized by coplanar die placement,
which puts the LED and phototransistor end to end, rather
than one above the other. The result is a mere 0.2 pF coupled
capacitance (Ciso), which minimizes the amount of capacitively coupled nOise injected by the optoisolator.
In addition to the rather large unit-to-unit CTR variation,
optoisolators have been known to exhibit CTR degradation
over time. Fortunately, improvements in gallium-arsenide
(GaAs) processing and handling now virtually eliminate this
concern. These recent improvements have been incorporated into the MOC8101 family.
The MOC8101 series devices have remarkable gain
stability. Under the strongly accelerated LED drive condition
of IF = 50 mA continuous, MOC8101 series devices have
now completed a total of 5,000 h of operation with a mean
gain shift of only 0.7%.
11-96
VDE Circuit Board Layout Design Rules
The most demanding and stringent safety requirements are on interfaces between a safety low-voltage
circuit [SELVj and a hazardous voltage (240 V power line).
The requirements for creepage path and clearance
dimensioning are different for each individual equipment
norm and also depend on the isolation group and safety
class of the equipment and the circuit board's resistance
to tracking. Isolation materials are classified for their
resistance to tracking creepage current stability from KB
100 to KB '" 600 (see VDE 303). On circuit board materials
with a low KB value, the creepage path distance requirements are higher than for materials with a high KB value.
In the following examples we therefore show creepage
path dimensions for KB 100, the lowest value which is
easily met by most circuit board materials.
The least stringent requirements on optocouplers, as
well as printboard layouts, are within and in between
SELV or ELV loops or circuits. (ELV = Electrical Low Voltage whic·h does not meet the safety low voltage
requirements.)
In studying the individual equipment norms, the
designer will discover that optocouplers are not mentioned in most of these norms. He has to use the requirements for transformers or potted components instead.
Spacing requirements between two live tracks on a PC
board within a low or high voltage loop (circuit) should
generally meet the VDE requirements for minimum clearance and creepage path dimensions. If they do not, the
circuit has to show some sort of current limiting (fuse,
high-impedance, etc.) which prevents fire hazard due to
an eventual short or sparkover between the two tracks.
The VDE testing institute will conduct, in this case, a
shorting test and a tracking test (arcing). See VDE 804.
Classical cases are rectifiers, thyristors and high-voltage
transistors which, sometimes due to their close pinout,
might not meet the VDE equipment requirements at a
certain voltage.
Figure 1.
Fuse
1 23, 4 5-
Clearance and creepage path must meet min
requirements*
Current limited due to fuse
Current limited due to RL and fuse
Current limited due to IGT, RL and fuse
2, 3, 4, 5 - Clearance and creepage path may be smaller than
VDE min requirements but must meet fire hazard
requirements due to short and arCing between the
tracks. There shall be no flames or explosion during
the test.
Figure 2.
High-Voltage Circuit
RX
Low-Voltage
Circuit
1 Clearance and creepage path must meet min requirements*
2 Current limited due to RL
3 Current limited due to RL
4 Current limited due to IGT
5 Current limited due to IGT and RX
PRINTED CIRCUIT BOARD LAYOUT FOR SELVPOVVERINTERFACES
'See Table 1 and Appendix Table 2 and 3 for minimum spacings
and voltage requirements.
The circuit board layout examples shown here are
dimensioned so that they provide a safe electrical isolation between metal parts carrying line voltage (called
Power Interface) and conductors connected to a SELV
circuit.
The required thickness through insulation for the optocoupler can be found in the individual VDE equipment
norms. (See examples for safety applications, Table 1.)
Many Class I equipment norms permit the use of parts
(modules, PC boards) which meet the Safety Class II
dimension and isolation requirements. This enables the
deSigner to take advantage of the less complex and space
demanding design of the Class II PC board layout also in
Class I classified equipment.
Optocoupler Mounting on PC Boards for Safety Class I
SELV transformers for Class I equipment have a Faraday shield which is connected to earth ground between
primary and secondary windings. This is not applicable
to optocouplers, but creepage path and clearance
requirements from safety Class II can be applied. Class I
also demands an earth ground track on the circuit board
between SELV - and power circuit. Applying the Class
I rules, this earth ground track should be between the
coupler input and output. However, this cannot be done
without violating the minimum creepage path and c1ear-
ance requirements. A possible solution is shown on Figure 9 and Figure 10.
The earth ground track itself has to show a minimum
distance to the equipment body (i.e., frame, circuit board
enclosure) or to any inactive, active or hazardous track
on the circuit board. According to many VDE equipment
norms, this creepage path distance for 250 V Max is 4
mm. A mechanically unsecured circuit board which can
be plugged in and out without a tool and is electrically
connected through a standard PC board connector, has
to show an isolation of the earth ground track to Class
II, which is 8 mm. This is because a standard PC connector, as shown in Figure 9, does not guarantee earthing
contact before there is termination of the life 220 V tracks
on the circuit board when plugged in. Another reason for
increased spacing is when the circuit board metal enclosure is not securely earth grounded. This is the case when
the connection is done with the PC module mounting
screws through lacquer or oxide layers to a grounded
rack or frame. (See Figure 10.) PC board designs per Figures 9 and 10 account for these possibilities and, therefore, show dimensions M, N and A, Band D as 8 mm
instead of 4 mm.
11-97
Table 1. Examples for Safety Applications for Motorola VDE Approved Optoisolators
Requirements for reinforced (double) or safe Insulation for
equipment with an operating voltage up to 250 vrms
(line voltage to ELV or SELV Interfaces)
Standsrd (2)
Equipment
Creepage
Clearance
(1)
Isolation
Barrier
Dielectric
Strength
Isolation
Resistance
Office Machines
Data Processing
Telecommunication
Electrical Household
Industrial Controls
Power Installations with Electronic Equipment
Traffic Ught Controls
Alarm Systems
Electrical Signal System for Railroads
General Std. for Electrical Equipment
[mm]
8.0
8.0
8.0
6.0
8.0
8.0
8.0
8.0
8.0
8.0
[mm]
8.0
8.0
8.0
6.0
8.0
8.0
8.0
8.0
8.0
8.0
[mm]
0.5
[n]
7x 106
7x 106
2x 106
-
[kVRMS]
3.75
3.75
2.5
3.0 (10)*
2.5
2.7
2.5
2.5
2.0
2.0
8.3(10)
(1)
0.5
3.75(10)"
lOx 1011
>7.5
0.5
-
10 x 1012
DIN
IEC
VDE
0806
0805
0804
0860
0113
0160
0832
0883
0831
0110
950
950
0883
-
Optoisolator Component Standard
(obsolete 12131191)
8.5
0884(4)
-
Optoisolator Component Standard
(replaces VDE0883)
>7.5
65
204
-
-
-
0.4
-
-
4xl06
1 x 106
1 x 106
4x 106
2x 106
2x 106
-
VDE Rating for Motorola 6-pin DIP Optoisolators
All Motorola 6-pin DIP Optoisotators meet or exceed the requirements of above listed
voe and DIN lEG Standards.
* Impulse discharge withstand voltage.
(1) To satisfy B.O mm creepage path on a PC board Motorola offers a special lead bend of 0.4 inch on all6-pin dual-in-line optoisolators. Order by attaching 'T' to
the end of the Motorola part number.
(2) voe standards (translated into English language) and lEe standards can be ordered from the American National Standard Institute ANSI 1430 Broadway, N. Y.,
N. Y. 10018, Sales Department 212-642-4900.
(3) Creepage path distances are measured from lead to lead across the top, bottom and ends of the package body.
(4) VDE 0884 testing is an option; the suffix letter "V" must be added to the standard number.
Figure 3. Optocoupler Mounting on PC
Boards for Safety Class II with Creepage
Path and Clearance
SELV-
Control-
Applicable for
VDE 0805 DINIIEC 950
VDE 0806 DIN/IEC 950
VDE 0113
VDE 0160 Part 1 and 2
VDE 0804 and 0804d
VDE 0831/0832/0833
VDE 0860 DIN/IEC 65
VDE 110b
Figure 4. Optocoupler Mounting on PC
Boards for Safety Class II with Clearance
/ ---t - T- - - - - I
Applicable for
with Slit - VDE 0860
without Slit - VDE 0804d
with/without Slit-VDE 0110b
G
G
J~ G~L ~
H
___ ~
--e ~ (.': I Power- I
~I ::::S:E:LV:-:c:on:t:ro:I-::::::::::~~P~$~-~~.~
~_ H __"1--- -....L.......::
Circuit
..2T ~
T .~
t _In~_erfac~_
\
Optocoupler Mounting on PC-Boards for Safety Class II with
clearance P ;;. 6 mm and creepage path G = 8 mm and Slit in
the PC-Board with Slit length = 12.7 mm and Slit thickness
H = 2 mm
11-98
G
G
G
G
= 8 mm
= 2 mm
P;;'6mm
, . . --L J --- 1 -- ....PC-Connector
COUPLER MOUNTING ON A CIRCUIT BOARD
Clearance and Creepage Path Between Input and Output for Optocouplers on a PC Board
Figure 5.
rr=o.3"n.62
Figure 7.
mm~
I
0.3"n.62 mm~
I
PC Board
Solder Eyes
1 mm
~ ~L ZZZZZJZ~ ~
--!
0.22"/5.6 mm
Solder Eyes
1--1 mm
1~J===-~
Input/Output Leads - L ~ 0.3"n.62 mm
Clearance Limited Due to PC Board
Solder Eyes - 0.22"/5.6 mm
Creepage Path on PC Board - 0.22"/5.6 mm
~ L:y
~l----____ _
~
ci
I
~{----
L
1- ----
Figure 6.
r
0.3"/7.62 mm ~
~
If a clearance of 0.23"/6 mm and a creepage path of minimum
8 mm is required, this is a possible solution.
~CBoard
Slit - 0.5"/12.7 mm long, 2 mm wide
PC Board Thickness -1.5 mm
Clearance - 6 mm Min
Creepage Path - 8 mm Min
~ ~ 2 IZ'ZZZz;;j
SOlde~ ~;s-" lo~,~~:J ~
1 mm
Slit punched
out 2 mm wide,
12 mm long
Figure 8.
~0.4"/10.16 mm=----i
=Ki bi=
1 mm
VDE equipment norms demanding longer creepage path than
0.22"/5.6 mm can be accomplished by a slit in the PC board
between the coupler input and output solder eyes of 2 mm width.
Input/Output Leads - L ~ 0.3"n.62 mm
Clearance on PC Boards - 0.22"/5.6 mm Min
Creepage Path on PC Board - 0.31/8 mm Min
---1
,
1---0.322"/8.2 mm
~ lI
1 mm
Where the equipment norms demand a clearance and creepage path of8 mm Min, the coupler input and output leads should
be bent to 0.4"/10.16 mm and the printboard layout should be
as shown.
Safety Coupler Mounting with Spacing - L = 0.4"/10.16 mm
Clearance on PC Board - 0.322"/8.2 mm
Creepage Path on PC Board - 0.322"/8.2 mm
All Motorola 6-pin dual-in-line optoisolators are available in
0.400" lead form. Attach "T" to any Motorola 6-pin dual-in-line
part number, for wide-spaced 0.400" lead form.
11-99
Figure 9. Optocoupler Mounting on PC Board
According to Safety Class I with Only One PC
Board Plug Connection
SELV-Control-Circuit
,.
!
r
Applicable for
VDE 0113
VDE 0160Pl
VDE 0160P2
VDE OB04
VDE 0804d
VDE OB31
VDE 0832
VDE 0833
VDE 0860
VDE 0110b
VDE 0805
VDE 0806
G = Bmm
M = Bmm
N = 8mm
M
I
~
--
~~ Power
-U
Interface
I
:~~~~, ,S: __
M
N N
~
J;a:
t
N
SELVI
I I
I
Control- • • • • • • • • • • • • • • • • •
!
\
Circuit
M
M
I
I
•••
••
••
SELV-Control-Circuit
•••
•••
•
Figure 10. Optocoupler Mounting on PC Board
According to Safety Class I with One PlugConnection for the SELV-Control Circuit and
One Screw-Connection for the Power-Interface
PC-Board-Frame
-----------,
SELV-Control Circuit-Area
D
I
I ~ I
~o
>tJ
D~§
D ~UI~---~(,t -;
Applicable for
VDE 0804 without Slit
VDE 0110b withlwithout Slit
D
>
I ....
~
I
I
h
r-- __
G
A = Bmm
B = Bmm
D = 8mm
H = 2mm
1= 5.6mm
h
I
:~~~t-~B~
W·t1-£
":
; F
K
= 8mm
K = 8mm
:
I
SELV-Wire
SELV-Control-Circuit-Area
11-100
••
•••
•
•
•••
•••
•
E, L,W
depends
on the
Application
DEFINITION OF TERMS
The following paragraphs define terms used by the
regulatories and international standard initiators. A separate discussion is given for:
1. Creepage and Clearance
2. Voltage
3. Insulations
4. Circuits
5. Equipment
1. CREEPAGE AND CLEARANCE
ISOLATION CREEPAGE PATH
Denotes the shortest path between two conductive
parts measured along the surface of the insulation, i.e.,
on the optocouplers, it is the shortest distance on the
surface of the package between the input and output
leads. On the circuit board in which the coupler is
mounted, it is the shortest distance across the surface
on the board between the solder eyes of the coupler
input/output leads. Coupler and circuit board creepage
path have to meet the minimum specified distances for
the individual VDE equipment norms.
Figure 11.
88
o
IC)
CLEARANCE
Denotes the shortest distance between two conductive
parts or between a conductive part and the bonding surface of the equipment, measured through air.
Figure 12.
A
2. VOLTAGES
HAZARDOUS VOLTAGE: A voltage exceeding 42.4 V
peak or dc, existing in a circuit which does not meet the
requirements for a limited current circuit.
WORKING VOLTAGE shall be the voltage which exists
across the insulation under normal working conditions.
Where the rms value is used, a sinusoidal ac waveform
shall be assumed. Where the dc value is used, the peak
value of any superimposed ripple shall be considered.
EXTRA-LOW VOLTAGE IELV): A voltage between conductors or between a conductor and earth not exceeding
42.4 V peak or dc, existing in a secondary circuit which
is separated from hazardous voltages by at least basic
insulation, but which does not meet the requirements for
a SELV circuit nor those for a limited current circuit.
ISOLATION WITHSTAND VOLTAGE: An ac or dc test
voltage insulation has to withstand without breakdown
or damage. It should not be confused with working or
operating voltage.
ISOLATION SURGE VOLTAGE: A positive or negative
transient voltage of defined energy and rise and fall times
which the insulation has to withstand without breakdown
or damage.
3. INSULATIONS
INSULATION, OPERATIONAL (functional): Insulation
which is necessary for the correct operation of the
equipment.
- Between parts of different potential.
- Between ELV or SELV circuits and earthed conductive parts.
INSULATION, BASIC: Insulation to provide basic protection against electric shock.
- Between a part at hazardous voltage and an earthed
conductive part.
- Between a part at hazardous voltage and a SELV
circuit which relies on being earthed for its integrity.
- Between a primary power conductor and the earthed
screen or core of a primary power transformer.
- As an element of double insulation.
INSULATION, SUPPLEMENTARY: Independent insulation applied in addition to basic insulation in order to
ensure protection against electric shock in the event of a
failure of the basic insulation.
- Between an accessible conductive part and a part
which could assume a hazardous voltage in the
event of a failure of basic insulation.
- Between the outer surface of handles, knobs, grips
and the like, and their shafts unless earthed.
- Between a floating non-SELV secondary circuit and
an unearthed conductive part of the body.
INSULATION, DOUBLE: Insulation comprising both
basic insulation and supplementary insulation.
INSULATION, REINFORCED: A single insulation system which provides a degree of protection against electric shock equivalent to double insulation under the conditions specified in the standard.
SAFE ELECTRICAL ISOLATION: Denotes an insulation
system isolating a hazardous voltage circuit from a SELV
circuit such that an insulation breakdown either is
unlikely or does not cause a hazardous condition on the
SELV circuit.
- Between an unearthed accessible conductive part
or a floating SELV circuit, and a primary circuit.
11-101
protection against electric shock does not rely on basic
insulation only, but which includes an additional safety
precaution in that operat~r-accessible conductive parts
are connected to the protective earthing conductor inthe
fixed wiring of the installation in such a way that the
operator-accessible conductive parts cannot become
hazardous in the event of a failure of the basic insulation.
Class I equipment may have parts with double insulation or reinforced insulation, or parts operating at
safety extra-low voltage.
CLASS II EQUIPMENT denotes equipment in which
protection against electric shock does not rely on basic
insulation only, but in which additional safety precautions, such as double insulation or reinforced insulation,
are provided, there being no provision for protective
earthing or reliance upon installation conditions.
CLASS'" EQUIPMENT: Equipment in which protection
against electric shock relies upon supply from SELV circuits and in which hazardous voltages are not generated.
4. CIRCUITS
PRIMARY CIRCUIT: An internal circuit which is directly
connected to the external supply mains or other equivalent source (such as motor-alternator set) which supplies the electric power. It includes the primary windings
of transformers, motors, other loading devices and the
means of connection to the supply mains.
SECONDARY CIRCUIT: A circuit which has no direct
connection to primary power and derives its power from
a transformer, converter or equivalent isolation device
situated within the equipment.
SAFETY EXTRA-LOW VOLTAGE ISELVI CIRCUIT: A circuit which is so designed and protected that under normal and single fault conditions the voltage between any
two accessible parts, one of which may be the body or
earth, does not exceed a safe value.
5. EQUIPMENTS
CLASS I EQUIPMENT: denotes equipment in which
Table 2. Minimum Rating Requirements for a Working Voltage up to 250 Vrms
Insulation
.
Creepage
[mml
Clearance
[mml
2.5
3
4
8
3
4
4
8
Operational
Basic
Supplementary
Reinforced
Isolation
Barrier
[mml
-
- to 2
- to 2'
Diel. Strength
[kVac rmsl
Isolation
Resistance
0
0.5
1.5
2.5
2.5 to 3.75'
2106
5106
7106
-
See Table 1 for detaIls.
Table 3. Electrical Interfaces and Required Insulation
Bare Metal Parts not
Touchable
ELV
Secondary Circuit
242.4 V
Primary
Circuit
(Line Voltage'
Case
F
1.
2.
3.
4.
5.
r
N
6.
Bare Metal Parts
Touchable
SELV
Secondary Circuit
.::; 42.4 V
~
R
I
IB
LB
I
~
I
~
Hot
~
7.
Class III Equipment
Class I Equipment
=
BaSIC InsulatIon
Reinforced or Safe Insulation
I
I
Class II Equipment
B
R
Earth Ground
F - FunctIonal (OperatIonal InsulatIon)
S = Supplementary Insulation
11-102
F
F
I
I
Application Note Abstracts
(Application Notes are available upon request.)
AN1126 Evaluation Systems for Remote
Control Devices on an Infrared Link
AN703 Designing Digitally-Controlled
Power Supplies
The discussion provides information for constructing the
basic building blocks for evaluation of both the IR transmitter/
receiver and the most popular remote control devices.
Schematics and single-sided PC board layouts are presented
which enable the designer to put together a basic control link
and evaluate its suitability in terms of data rate, effective
distance, error rate, and cost.
Two design approaches are discussed: basic low voltage
supply using an inexpensive MC1723 voltage regulator and a
high current, high voltage supply using the MC1466 floating
regulator with optoelectronic isolation. Various circuit options
are shown to allow the designer maximum flexibility in any
application.
AN575A Variable Speed Control System
for Induction Motors
AN1078 New Components Simplify Brush
DC Motor Drives
Brush motor drive design is simplified by combining multiple
power MOSFETs, a new MOS turn-off device and gain stable
opto level shifters. The discussion describes circuits which
can be combined to make practical drive circuits which control
speed in both directions and operate from a single power
supply.
11-103
This note describes a method of controlling the speed of
standard induction motors above and below their rated
speeds. A unique variable frequency drive system is used to
maintain the rated output torque at speeds below the
nameplate rating.
11-104
Section Twelve
Tape and Reel
Specifications and
Surface Mount Package
Information
SO-8 Tape and Reel Specifications ......... 12-2
6-Pin Tape and Reel Specifications ......... 12-3
EmiHersiDetectors Tape and Reel
Specifications ............................ 12-5
Surface Mount Package Information ....... 12-8
12-1
SO-8 Tape and Reel Specifications
Motorola has now added the convenience of Tape and Reel
packaging for our growing family of Opto products. Two reel
sizes are available for all but the largest types to support the
requirements of both first and second generation pick-and-
place equipment. The packaging fully conforms to the latest
EIA-481 specification. The antistatic embossed tape provides
a secure cavity, sealed with a peel-back cover tape.
MECHANICAL POLARIZATION
TYPICAL
10ft
USER DIRECTION OF FEED
•
OptoSO-8
Tape Width (mm)
Device1 per Reel
Reel Size (inch)
Device Suffix
OptoSO-8
Package
12
500
7
R1
OptoSO-8
12
2,500
13
R2
(1) Mlmmum order quantity Is one reel. DlstnbutorslOEM customers may break lots or reels at their option; however, broken reels may not be returned.
10 PITCHES CUMULATIVE TOLERANCE
ON TAPE ± 0.2 mm (± 0.008")
CASE 846-01
S0-8 DEVICES
DIRECTION OF FEED
Description
Symbol
Dimensions in
Inches (mm) SOlC8
Noles
.472 ± .012 (12 ± .3)
Tape width
W
Carrier tape thickness
t
.012 (0.3) max.
Pitch of sprocket holes
Po
.157 ± .004 (4 ± 0.1)
Diameter of sprocket holes
DO
.059 (1.5) min.
Distance of sprocket holes
E
.069 ± .004 (1.75 ± 0.1)
Distance of compartment
F
.217 ± .002 (5.5 ± .005)
P2
.079 ± .002 (2 ± 0.05)
Distance compartment to compartment
P3
.157(4)
Compartment
Ko
Ao
Bo
.140(3.5)
.252 (6.4)
.205 (5.2)
Hole in compartment
D1
.054(1.5)
Width of fixing tape
W1
.325 (8.3) tape
d
.004 (0.1) max.
Device tilt in the compartment
15° max.
Minimum bending radius
1.18(30)
12-2
Cummulative pitch error +0.2 mm/10 pitches
Center hole to center compartment
The fixing tape shall not cover the sprocket
holes, nor protrude beyond the carrier tape so
not to exceed max. tape width
6-Pin Tape and Reel Specifications
All 6-Pin surface mount devices are available in Tape & Reel format.
r"~~~
Low-Profile
~
t
~
t
.008" (MAX)
.020" - .025"
Package
TapeWidlh
(mm)
Device1
per Reel
Reel Size
(inch)
Device
Suffix
24
1,000
13
R2
6-Pin Oploisolators
(1) Minimum order quantity is one reel. Distributors/OEM customers may break lots or reels at their option; however, broken reels may not be returned.
Add the following suffixes to the standard DIP-6 part number to obtain the option of your choice:
Low-profile surface mount Tape & Reel option = "FR2"
Standard-profile surface mount Tape & Reel option = "SR2"
EMBOSSED TAPE AND REEL DATA FOR OPTO
CARRIER TAPE SPECIFICATIONS
10 PITCHES CUMULATIVE
TOLERANCE ON TAPE
~~,
1
n
± 0.2 mm (± 0.008'1
t~
COVER
TAPE
F W
'--+-'1
r
.1
B1
01
FOR COMPONENTS
2.0mmx1.2mm
AND LARGER
~
FOR MACHINE REFERENCE
ONLY
INCWDING DRAFT AND RADII
CONCENTRIC AROUND BO
USER OIRECTION OF FEED
* TOP COVER
TAPE THICKNESS (11)
0.10mm
(.004'1 MAX.
BARCODE
LABEL
RMIN
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS 'R"
WITHOUT DAMAGE
10°
\1
EMBOSSED
MAXIMUM COMPONENT ROTATION
r--;~;'~
I
1mmMAX
I
TYPICAL
COMPONENT CAVlTY
CENTERUNE
1mm
(.039") MAX
TYPICAL
COMPONENT
~ CENTERUNE
12-3
6-PIN TAPE AND REEL SPECIFICATIONS (continued)
DIMENSIONS
Tape
Size
81 Max
0
24mm
2O.1mm
(.791")
1.5+0.1 mm
-0.0
(.0601
F
K
P
Po
P2
RMln
TMax
WMax
II.S±O.1 mm
(.453±.004")
11.9 mm Max
(.468")
16.0±.01 mm
(.63±.004,,)
4.0±0.1 mm
(.lS7±.004,,)
2.0±O.1 mm
(.079±.002"j
30mm
0.6mm
(.024,,)
24.3mm
(.957")
E
01
1.5mmMin 1.7S±0.1 mm
(.069±.004,,)
(1.18")
(.059+.004"
-0.0)
Metne dimensions govern - Enghsh are In parentheses for reference only.
NOTE 1: AO. BO. and KO are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,
the component cannot rotate more than 10° within the determined cavity.
EMBOSSED TAPE AND REEL DATA FOR OPTO
Reel Dimensions
Metric Dimensions Govern - English are In parentheses for reference only
--1
TI --7
-u--,,~.. "... ,'-'~
! /~~,,(.06")
1
2(O.2m")mtIN
A
.795
(~\
~~~//
(.512"±.D02")
~
____
-t-
I--- TMAX
I
DUTSIDE DIMENSIDN
MEASURED AT EDGE
f
50 mm MIN
(1.969")
+
FULL RADIUS
INSIDE DIMENSION
MEASURED NEAR HUB
Size
A Max
24mm
360mm
(14.173")
G
24.4 mm + 2.0 mm, -0.0
(.961" + .070", -0.00)
12-4
TMax
30.4 mm
(1.197")
Emitters/Detectors Tape and Reel Specifications
TO-92
RADIAL
TAPE IN
FAN FOLD
BOX OR
ON REEL
TO-92 EIA, lEe, EIAJ
Radial Tape in Fan Fold
Box or On Reel
Radial tape in fan fold box or on reel of the reliable TO-92 package are
the best methods of capturing devices for automatic insertion in printed
circuit boards. These methods of taping are compatible with various equipment for active and passive component insertion.
•
•
•
•
•
•
'"
~
'I'
Available in Fan Fold Box
Available on 365 mm Reels
Accommodates All Standard Inserters
Allows Flexible Circuit Board Layout
2.5 mm Pin Spacing for Soldering
EIA-468, IEC 286-2, EIAJ RCI008B
'I'
'I'
Ordering Notes:
When ordering radial tape in fan fold box or on reel, specify the style per
Figures 3 through 6. Add the suffix "RLR" and "Style" to the device title, i.e.
MPS3904RLRA. This will be a standard MPS3904 radial taped and supplied on a reel per Figure 3.
Fan Fold Box Information Minimum order quantity I Box/$200LL.
Order in increments of 2000.
Reel Information - Minimum order quantity I Reel/$200LL.
Order in increments of 2000.
US/European Suffix Conversions
Package
Emitters/Detectors
..
US
EUROPE
RLRA
RL
RLRE
RL1
RLRM
ZLI
Tape Width
(mm)
Devlce1
per Reel
Reel Size
(Inch)
Device
Suffix
N/A
2,000
N/A
RLRE
(1) MInimum order quantity IS one reel. Dlstnbutors/OEM customers may break lots or reels at their option; however, broken reels may not be returned.
12-5
EMITTERS/DETECTORS TAPE AND REEL SPECIFICATIONS (continued)
TO-92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
Figure 1. Device Positioning on Tape
Specification
Inches
Symbol
Item
Millimeter
Min
Max
Min
0.1496
0.1653
3.8
Max
4.2
D
Tape Feedhole Diameter
D2
Component Lead Thickness Dimension
0.Q15
0.020
0.38
0.51
Component Lead Pitch
0.0945
0.110
2.4
2.8
.059
.156
1.5
4.0
0.3346
0.3741
8.5
9.5
1.0
Fl, F2
H
Bottom of Component to Seating Plane
Hl
Feedhole Location
H2A
Deflection Left or Right
0
0.039
0
H2B
Deflection Front or Rear
0
0.051
0
1.0
0.7086
0.768
18
19.5
16.5
H4
Feedhole to Bottom of Component
H5
Feedhole to Seating Plane
0.610
0.649
15.5
L
Defective Unit Clipped Dimension
0.3346
0.433
8.5
11
Ll
Lead Wire Enclosure
0.09842
2.5
-
P
Feedhole Pitch
0.4921
0.5079
12.5
12.9
Pl
Feedhole Center to Center Lead
0.2342
0.2658
5.95
6.75
P2
First Lead Spacing Dimension
0.1397
0.1556
3.55
3.95
T
Adhesive Tape Thickness
0.06
0.08
0.15
0.20
Tl
Overall Taped Package Thickness
-
0.0567
-
1.44
T2
Carrier Strip Thickness
0.014
0.027
0.35
0.65
-
W
Carrier Strip Width
0.6889
0.7481
17.5
19
Wl
Adhesive Tape Width
0.2165
0.2841
5.5
6.3
W2
Adhesive Tape Pos~ion
.0059
0.01968
.15
0.5
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum nonMcumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Hoiddown tape not to extend beyond tha edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
S. Splices will not interfere with tha sprocket feed holes.
12-6
EMITIERSIDETECTORS TAPE AND REEL SPECIFICATIONS (continued)
TO-92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
REEL STYLES
ARBOR HOLE DIA.
SO.5mm ± O.25mm
MARKING NOTE
RECESS
DEPTH
9.5mm MIN
t;
n
~
~ml
~IfHUB
RECESS
76.2mm±1mm
365mm + 3, - Omm
!,
38.1mm±1mm
Ed
~
I
Material used must not cause deterioration of components or degrade lead solderability
Figure 2. Reel Specifications
ADHESIVE TAPE ON REVERSE SIDE
Rounded side of transistor and adhesive tape visible.
Flat side of transistor and carrier strip visible
(adhesive tape on reverse side).
Figure 3. Style A
Figure 4. Style B
ADHESIVE TAPE ON REVERSE SIDE
FEED~="""'~_~_ _ _ _ _ _ _--l
Aat side of transistor and adhesive tape visible.
Rounded side of transistor and carrier strip visible
(adhesive tape on reverse side).
Figure 5. Style E
Figure 6. Style F
12-7
Surface Mount Package Information
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components omo a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass or
stainless steel with a typical thickness of 0.008 inches. The
stencil opening size for the SOIC-8 package should be the
same as the pad size on the printed circuit board, I.e., a 1:1
registration.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less ..
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 5 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a figure
for belt speed. Taken together, these control settings make up
a heating "profile" for that particular circuit board. On
machines controlled by a computer, the computer remembers
these profiles from one operating session to the next. Figure
1 shows a typical heating profile for use when soldering a
surface mount device to a printed circuit board. This profile will
vary among soldering systems but it is a good starting point.
Factors that can affect the profile include the type of soldering
system in use, density and types of components on the board,
type of solder used, and the type of board or substrate material
being used. This profile shows temperature versus time. The
STEP 1
PREHEAT
ZONE 1
"RAMP'
STEP 2
STEP 3
VENT
HEATING
"SOAK" ZONES 2 &5
'RAMP'
I
I
line on the graph shows the actual temperature that might be
experienced on the surface of a test board at or near a central
solder joint. The two profiles are based on a high density and
a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this
profile. The type of solder used was 62136/2 Tin Lead Silver
with a melting pOint between 177-189°C. When this type of
furnace is used for solder reflow work, the circuit boards and
solder joints tend to heat first. The components on the board
are then heated by conduction. The circuit board, because it
has a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may be
up to 30 degrees cooler than the adjacent solder joints.
STEP 4
STEP 5
HEATING
HEATING
ZONES3&6 ZONES 4 & 7
"SOAK" I "SPIKE"
j1?D"C
DESIRED CURVE FOR HIGH
STEP 6 STEP 7
VENT COOUNG
205° TO
I
I
<"---- 219°C
I I
II
MASSA~:r:UES
OLDER IS UQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLy)
I
TIME (3 TO 7 MINUTES TOTAL)
Figure 1.
•
TMAX
Typical Solder Heating Profile
12-8
PEAK AT
SOLDER
JOINT
SURFACE MOUNT PACKAGE INFORMATION (continued)
Footprints for Soldering
6-PIN DIP
GULL-WING
0.060
""T.52""
.045 (± .005)
TO
o O~
T
.045 (± .005)
TO 00*
To n ~~~ ID~~ ~:~
.300 (± .005)
.040~ ~-1
(±.005)
(INCHES)
Standard "S" Option
(±.OO5)
rODDD~
0.275
~
0.155
--.rn-
looDo-L
-1 f- -1
0~~4
~~
Cn::")
(INCHES)
Low-Profile "F" Option
12-9
OPTOSO-8
12-10
Section
Thirteen
Package Outline
Dimensions
13-1
Package Outline Dimensions
NOTES:
1. LEADS WITHIN 0.13 mm (0.005) RADIUS OF TRUE
POSITION AT SEATING PlANE, AT MAXIMUM
MATERIAL CONOITION.
2. PIN 3 INTERNALLY CONNECTEO TO CASE.
DIM
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 4:
PIN 1. OUTPUT
::
~\i%uND
A
B
C
D
F
G
H
j
K
L
M
MILLAIETERS
MIN
MAX
5.31
5.84
'.52 4.95
4.57
6."
0.41
0."
1.14
2.5'BSC
0.99
1.17
0.84
1.22
12.70
3.35
4.01
45° BSC
INCHES
MIN
MAX
0.209 0.230
0.178 0.196
0.160 0.255
0.016 0.019
0.045
O.100BSC
0.036 0.048
0.033 0.048
0.500
0.132 0.15B
45°BSC
CASE 82-05
r-- A L- fI---I
B
fF
t
~
SEATING
PLANE
o--il.-
NOTES:
1. PIN 2 INTERNALLY CONNECTED TO CASE.
Z LEADS WrTHlN 0.13 mm (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
6
-t
K
~
STYLE 1:
PIN 1. ANODE
2. CATHODE
DIM
A
B
C
D
F
G
H
j
L~~
K
L
M
CASE 209·01
13-2
MIWMETEAS
MIN
MAX
5~1
5.84
'.52 4.95
5.08
6.35
0.41
0."
0~1
1.02
2.S4BSC
0.99
1.17
0.84
1.22
12.70
3.35
4.01
wasc
INCHES
MIN
MAX
0.209 0.230
0.178 0.195
0.200 0.250
0.016 0.019
0.020 0.040
O.100BSC
0.039 0.048
0.033 0.048
O~
0.132 0.158
45°8SC
PACKAGE OUTLINE DIMENSIONS (continued)
NOTES:
1. PIN 2 INTERNALLY CONNECTED TO CASE.
2. LEADS WITHIN 0.13 mm (O.DOS) RADIUS OF TRUE
POSITION AT SEAllNG PLANE AT MAXIMUM
MATERIAL CONDmON.
STYLE 1:
PIN 1. ANODE
2. CATHODE
DIM
A
B
C
D
G
H
J
K
M
MlLUMETERS
MIN
MAX
5.31
5.84
4.52
4.95
4.57
5.33
0.41
0.'18
2.54BSC
0.99
1.17
0.84
1.22
12.70
45' BSC
INCHES
MAX
MIN
0209 0.230
0.178 0.195
0.180 0.210
0.016 0.019
O.100BSC
0.039 0.046
0.003 0.046
D.500
45 BSC
Q
CASE 21G-01
1RI~
NOTES:
1, PIN 3 INTERNALLY CONNECTED TO CASE.
2. DIMENSIONING AND TOLERANCING PER Y14.5,
1982.
SEATllG1[ f I-T-I
PLANE
0-11--
MIUIIETERS
K -$-1¢O.36(O.014)®ITI A® I H®I
~
STYLE 1:
PIN 1. ANODE
2. CATHODE
3. CASE
CASE 210A-01
13-3
DIM
A
B
C
D
G
H
J
MIN
lAX
5.31
4.65
3.12
0.41
5.84
K
12.10
M
4.10
326
0.48
2.54BSC
0.99
0.84
1.17
1.22
45' BSC
INCHES
MIN
MAX
0209 0.230
0.183 0.185
0.123 0.129
0.016 0.019
O.I00BSC
0.039 0.046
0.033 0.046
0.500
45°BSC
PACKAGE OUTLINE DIMENSIONS (continued)
STYLE 1:
PIN 1.
2.
3.
4.
-Your
+VOUT
GROUND CASE
+VCC
NOTES:
1. DIMENSIONS A AND HARE DAl1JMS AND TIS A
DAlUM SURFACE.
2. DlMENslONING AND TOLERANCING PER Y14.5,
1982.
DIM
A
B
C
D
G
H
J
K
M
I-T-I
~1¢O.36(O.014)®ITI A® I H®I
MlLUMETERS
MIN
MAX
5.30
5.38
4."
4."
3.42
3.60
0.40
0.43
2.54BSC
0.91
1.16
0.83 121
12.70
45°BSC
INCHES
MIN
0.2.12
0.183 0.185
~135
0.142
O~
0.016
0.019
O.100BSC
0.036 0.046
0.033 0.046
0.500
45°BSC
CASE 210D-II1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982.
2. CONTROWNG DIMENSION: INCH.
IDlM
A
a
STYLEt
PIN 1. CATHODE
2. ANODE
CASE 279B-II1
13-4
INCHES
MIN
MAX
0.217 0.236
MlLUMETERS
MIN
MAX
5.52
4.00
8.13
5.96
5.20
9.14
0.71
1.39
0.76
2.79
26.67
1.82
2.79
E
0.189
0.320
0.020
0.045
0.205
0.300
0.028
0.055
F
0.020
0.030
G
0.090
0.110
2.29
K
1.00
1.05
25.40
L
0.007
0.072
0.18
R
0.095
0.110
2.42
C
o
0.51
1.15
0.51
PACKAGE OUTLINE DIMENSIONS (continued)
--f+-~=;UNE
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
Y14.5M,1982.
2. CONTROWNG DIMENSION: INCH.
! Wt *
YILUMETERS
Mill
MAX
DIM
•
---.L
6.19
6.50
10.64 10.94
0.35
0.55
7.S6BSC
2.54BSC
0.43
0.55
7.36
1.45
1.70
11.68 12.19
3.07
3.32
4.19
4.52
2.38
2.69
0.88
1.14
2.54 NOM
C
D
--II--D4PI.
G
1~~nl~0.~51~~~.0~~)'®~IT'I~R~®~1~B-®~I
H
J
K
Q
STVLE1:
PIN 1. CATHODE
2. COu.ECTOR
3
3. ANODE
4
W
4. EMITTER
81
C1
Q
I~I 0.51 (0.020)® ITI c® I
1~10.036(0.014)®ITI R®I 8®1
CASE 354-03
_
NOTE:
OPTICAL
CENTER UNE
~ B
=c--m~:G
1. DIMENSIONING AND TOlERANCING
STYlE 1:
PIN 1. CATHODE
~
COll£CTOR
3. ANODE
4. EMITTER
, --1'1-- D 4 PL
I I
,-.G..,
"'=~i'11r=-0."'51-=(0""'.0~,"")"",,,®::-TI-::1T
1
IrA:-:®"""1c=-®""I
PER Y14.5M. 1982.
2. CONTROWNG DIMENSION: INCH.
DIM
A
B
C
o
E
F
G
H
Q2PL
1~10.36(0.014)®ITI A®I c®1
J
K
N
Q
R
S
U
v
W
J
4PL
1~10.51 (0.020)® ITI c® I
CASE 354A..(J3
13-5
MIN
0.950
0.419
0.244
0.014
0.246
PACKAGE OUTLINE DIMENSIONS (continued)
m
STYLE 1:
PIN 1.
2
3.
4.
5.
--ft-~=UNE
C
--I-----.b'"T-t--.r'
*
CA1IiODE
VCC
GROUND
OUTPUT
ANODE
DSPL
1~10.51 (0.020) ® ITI R® I B ® I
5
4
J
NOTES:
1. DIMENSIONING AND TOlERANCING PER
Y14.SM,1982.
2. CONTROWNG DIMENSION: INCH.
INCHES
DIM
MIM
MAX
B
C
D
G
H
J
K
R
U
V
W
Bl
Cl
Dl
0244
0.256
0.419
0.014
0.431
0.017
0.022
0.022
0.2908SC
0.1008SC
0.290
0.450
0.115
0.165
0.480
0.128
0.178
0.10&
0.094
0.035 0.045
Q.l00NOM
0.0508SC
IIILUMETERS
l1li MAX
a19
6.50
10.64 10.94
0.35
0.55
1.368SC
2.548SC
0.55
0.43
1.36
11.66 12.19
3.32
3.01
4.19
4.52
2.36
268
0.68
1.14
2.54 NOM
1.21BSC
SPL
I~I 0.51 (0.020)® ITI B® I
CASE 354B-02
~
NOTE:
1. DIMENSIONING AND TOl£RANCiNG
OP11CAL
CENTER UNE
B
PER Y14.5M, 1982
2. CONmOWNG DIMENSION: INCH
STYlE 1:
PIN 1. CATHODE
lfL-~-r-+-i--~~=~~
~
lJ
I
I
2.
I
DIM
A
B
C
o
--III-- 0 5 PL
G
vee
3. GROUND
•. OUTPUT
5. ANODE
FI~.=-r=-10.-51-(0-.02OC:-:)--;'®"Ir=TrlA-:-®"'M'l-::c"®"1
Q2PL
I~I 0.36(0.014) ® ITI A® I c®1
J
SPL
1~10.51 (0.02O)® ITI c® I
CASE 354C-03
13-6
E
F
G
H
J
K
INCHES
MIN
MAX
0.950
0.419
0.244
0.014
0.246
0.985
0.431
0.256
0.022
0.258
MILUIIETEIIS
MIN
24.13
10.64
6.19
0.035 0.045
O.280BSC
0.100
0.011 0.022
0.290
sse
L
O.05OBSC
N
Q
0.100 NOM
0.124 0.133
R
5
0.460
0.115
U
V
0.1508SC
0.165 0.118
W
0.094
0.480
0.129
0.106
1
MAX
25.01
10.94
6.50
PACKAGE OUTLINE DIMENSIONS (continued)
STYLE 1
PIN 1
,.
3.
4.
B1
CATHOOE
COLLECTOR
ANODE
EMITTER
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982.
2. CONTROLUNG DIMENSION: INCH.
DIM
B
C
D
INCHES
MIN
MAX
0.243
0.249
0.495
0.014
0.505
0.022
G
O.400BSG
H
J
K
R
U
V
W
B1
C1
0.017 0.02'
0.290
0.535 0.554
0.190 0.200
0.1725 O.lno
0.120 0.130
0.034 0.039
0.170 NOM
O.100BSC
4.32 NOM
CASE 354G-02
8
STYLE 1:
PIN 1, CATHODE
2. COU£CTOR
3. ANODE
4. EMITTER
-----.-
f-+-----i -
-l.--
---L--'-'11r---.--'lII"'-'~
OPTICAL
CENTER UNE
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982
2. CONTROWNG DIMENSION: INCH.
DIM
B
C
D
G
V
W
81
C1
CASE 354J-01
13-7
0.153
0.049
PACKAGE OUTLINE DIMENSIONS (continued)
STYLE 1:
PIlI 1. CATHOOE
2. Vee
3. GND
4. OUTPUT
5. ANODE
NOlES:
1. D1UENSIONlNG AND TOLERANCING
PER ANSI Y14.5M, 1982.
~ CDNTROWNG D1MENS1ON: INCH.
I 0.244
0.256
UO
1.50
2.5<
J;5
1~~271i
~
.03
t]j
CASE 354K-01
B 1... 11\>0.25(0.010) ®
ITI
S
NOTES:
1. DIMENSIONING AND TOLEAANCING PER
ANSI Y14.5M, 1982.
2. CONTROWNG DIMENSION: INCH.
DIll
A
SME1:
PIN 1. ANODE
2. CATHODE
SME3:
PIN 1. CATHODE
~ ANODE
1... lcpo.25(0.010)®ITI v® I z®1
B
C
D
E
F
G
H
J
K
L
N
R
S
CASE 363B-01
13-8
19.30
9.14
7.62
1.56
2.41
0.43
0.58
2.54BSC
0.33
0.45
7.62BSC
9.91
1.14
11.43
1.65
2.54BSC
3.05
3.30
7.82
8.12
5.08BSC
U
0.66
0.91
V
6.86
7.11
PACKAGE OUTLINE DIMENSIONS (continued)
B It I ~ 0.25 (0.010) @ I TI
s
NOTES:
1. otMENStoNING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CQNTROlUNG DIMENSION: INCH.
i----+f-l-J
$
REF
t
~Q
Itl~0.25(o.o10)@ ITI v@1 l@1
1
DIM
A
B
+
'_
3
STYLE 1:
PIN 1. OUTPUT
2. GROUND
3. Vee
19.30
9.14
21.33
9.39
C
7.62
8.12
D
E
F
1.55
2.41
0.43
1.62
2.66
0.58
G
H
J
K
L
N
Q
R
S
U
V
W
X
CASE 363C'()1
MILUMETERS
MIN
MAX
INCHES
2.54BSC
0.33
0.45
7.62BSC
9.91
11.43
1.14
1.65
2.54BSC
3.05
3.30
7.62.
8.12
5.088SC
0.66
0.91
6.86
7.11
5.08BSC
10.87 11.55
0.100
0.120
0.300
0.200BSC
0.026 0.036
0.270 0280
O.200BSC
0.428 0.455
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROWNG DIMENSION: INCH.
MIWMETERS
STYLE 1:
PIN 1. ANODE
2. CATHODE
DIM
A
Mil
0.268
B
C
D
0.307
G
O.208BSC
0.086 0.096
0.014 0.018
H
L
I
-I
~
J
K
III
~t
L
C1
C1
D.PL
1-$-1 0.25 (0.010)@ I TI A @ I
CASE 381'()1
13-9
MAX
0.284
0.323
0.102
0.118
0.020
0.030
0.472
0.025
0.051
0.551
0.035
0.059
PACKAGE OUTLINE DIMENSIONS (continued)
-JCr-
E
NOTES:
1. IlIMESIONING AND TOLERANCING PER ANSI
Y14.5M,'9B2.
2. CONTROWNG DIMENSION: INCH.
SlYLE2
PIN ~ lED CATHODE
3. LEDANOOE
7. TRIACMT
9. TRIACMT
DIM
A
B
C
D
E
G
H
J
K
L
N
P
S
Y
INCHES
MIN
MAX
0.965
1.005
.416
.170
M25
.10
0.1l3li
O.
0.4OOBSC
0.040 0.060
0.01
.134
1
0.2IlOBSC
0.190 0.210
0.023 0.043
0.695 0.715
IIIWMETERS
MIN
MAX
24.51 I 25.53
l.fiT
11.7
4
0."
.02
4.
0."
10.16BSC
1.02
1.52
0.30
OA6
3.40
3.91
5.088SC
4.83
5.33
0.58
1.09
17.65
O.100BSC
18.18
2.54BSC
CASE 417-112
NOTES:
1. DIMESIONING AND TOlERANCING PER ANSI
Y14.5M,1982.
2. CONTROWNG DIMENSION: INCH.
DIU
S1YI.E 1:
PIN 2. LED CATI-IODE
3. LEDANDDE
0.965
1.005
B
DA16
0.436
C
0.170
0.190
D
E
G
0.025 0.035
0.040 0.060
0.4OO8SC
H
J
0.040
0.012
0.134
K
u
y
W
13-10
0.060
0.018
0.154
O.200BSC
7. TRIACMT
9. TRIACMT
CASE 417A-112
INCHES
MIN
MAX
A
0.190
0.210
0.023
0.043
0.0fi1
0.067
0.734
0.754
0.840
0.870
0.593 0.613
o.100BSC
0,074 0.094
0.265 0.295
0.079
0.089
0.026
0.036
PACKAGE OUTLINE DIMENSIONS (continued)
Q
1-$-1;21 0.25 (0.010) ® ITI A® I C ®,I
STYLE 3:
PIN 1. OUTPUT
2. GROUND
3. Vee
STYLE 4:
PIN 1. CATHODE
2. ANODE/COLLECTOR
3. EMmER
NOTES:
1. DIMENSIONING AND TOLERANCING PEA ANSI
V14.5M,1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
G
H
J
K
L
N
Q
U
INCHES
MAX
MIN
0.170
0.190
0.160
0.095
0.140
0.080
0.017 0.024
O.100BSC
O.OSOBSC
1
008
0.575
0.
0.050
0.004
0.060 0.076
O.100BSG
MlLUMETERS
MIN
MAX
4.83
4.32
4.06
3.56
2.41
2.03
0.44
0.60
2.54BSC
1.27BSC
0.23
0.38
14.61
16.51
1.'17BSC
0.10
0.38
1.52
1.83
2.54B8C
CASE 422-01
STYLE 1:
PIN 1. CATHODE
2. ANODE
STYLE 2:
PIN 1. EMmER
2. COLLECTOR
SlYl.E4:
PIN 1. ANODE
2. CATHODE
NOTES:
1. DIMENSIONING AND TOL£RANCING PER ANSI
Y14.5M,1982.
2. CONTROWNG DIMENSION: INCH.
INCHES
DIM
MIN
MAX
A
B
C
D
0.170
0.140
0.080
0.017
0.190
0.160
0.095
0.024
G
H
O.100BSC
O.050BSC
0.009 0.022
J
K
N
Q
U
CASE 422A-Ol
13-11
0.575
0.004
0.060
0.650
0.015
0.076
O.100BSC
MILUMETERS
MIN
MAX
4.32
4.83
3.56
4.06
2.03
2.41
0.44
0.60
2.54BSC
1.2788C
0.23
0.55
14.61
16.51
0.10
0.38
1.52
1.93
2.54BSC
PACKAGE OUTLINE DIMENSIONS (continued)
NOTES:
1. DIMEllSIOIIING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CDNTROWNG DIMENSION: INCIi.
DIM LTO CENTER OF LEAD WHEN FORMED
a
PARAllEL
INCHES
MAX
DIM
A
I
0.350
0.260
C
D
E
F
G
J
L:EI
SEATING
PlANE
1.02
K
L
IDLE 5:
STYLE 3:
PINt. ANODE
2. CAniODE
PIN 1. ANODE
2. CATIIODE
3. NC
OUTPUT
5. GROUND
6. Vec
..
..
..
3. NC
EMITTER
5. COU£CTOR
6. NC
CASE
SlYLEB:
PINt. ANODE
2. CATIIODE
3. NC
MAIN TERMINAL
5. SU8STRATE
5. MAIN TERMINAL
..
1.77
0.25 0.38
2.54BSC
0.21
0.30
2.54 3.81
7.62BSC
()O
15
0.38 2.54
M
STYLE 1:
PIN 1. ANODE
2. CAniODE
3. NC
EMlmR
5. COLLECTOR
6. BASE
IIILLIIIEll!RS
MIN
MAX
8.13 8.89
6.10 6.60
2.93 5.08
0.41
0.50
0
STYLE a:
PIN 1. LED 1 ANODE/LED 2 CATHODE
2. LED 1 CAniODE/LED 2 ANODE
3. NC
EMlmR
5. COLLECTOR
6. BASE
..
730A-04
~
o~
0,
3
F'PL-~
1I.1
E6PL
j'
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5N,1982.
2. CONTROLUNG DIMENSION: INCH.
r-
..lJJ~
f f
a
~~
....... G
-
A
I
C
D
E
F
G
H
L-,
K IPL
~
--00
DIM
~
J
PLANE
K
L
1~lo.13(O.OO5)®ITI 8®1 A®I
D6PL
INCHES
MIN
MAX
0.320 0.350
~240
0.260
0.115 0.200
o.ola 0.020
0.040 o.oro
0.010 0.014
O.100BSC
0.020 0.026
0.008 0.012
0.006 0.035
O.320BSC
MlLUIIETERS
Mill
MAX
8.13
6.10
2...
a.89
6.60
0.41
1.02
0.25
6."
0.60
1.n
0.36
2.54BSC
0.51
0.63
0.20
0.30
0.16
0.89
a.13BSC
1~lo.13(O.005)®ITI A®I 8®1
STYLE 1:
PIN 1. ANODE
2. CATIIODE
NC
EMITTER
5. COllECTOR
6. BASE
....
STYLE':
PINt. ANODE
2. CATIIOOE
NC
~ EMITTER
5. COllECTOR
..
5. NC
STYLE 5:
PINt ANODE
2. CAniODE
NC
OUTPUT
5. GROUND
6. VCC
....
CASE 730C-04
13-12
STYLE 6:
PINt ANODE
2. CATIIODE
....
NC
MAIN TERMINAL
5. SUBSTRATE
6. MAIN TERMINAL
STYLE 8:
PIN 1. LED 1 ANODE/LED 2 CAniODE
2. LED 1 CATIIODE/LED 2 ANODE
..a
NC
EMITTER
5. COllECTOR
6. BASE
PACKAGE OUTLINE DIMENSIONS (continued)
~
a~
01
F4 __
PL
II
SEAnNG
PLANE
-I
E.PL __
3
I-
rn-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982.
2. CONTROWNG DIMENSION: INCH.
3. DIM LTO CENTER OF lEAD WHEN FORMED
PAAALl£L
~~~
J~Kt
--'
STYLE 1:
PIN 1. ANODE
4.
r-L---j
B
C
D
E
Fi
I
I
F
G
J
K
L
N
-II-J
O.PL
INCHES
MIN
MAX
0.320 0.350
0.240 0260
0.115 0.200
0.016 0.020
0.040 0.070
0.010 0.014
D.l00BSC
0.008 0.012
0.100 0.150
0.400 0.425
0,015 0.040
MIWMETERS
MIN
MAX
B.13
8.89
6.10
6.80
~93
5.08
0.41
O~O
'.02
'.77
0,,"
0.36
2.54BSC
0.30
O~'
3.81
2.54
10.16 10.80
0.38
1.02
I-$-I 0.13 (0.005) ® ITI A® I B® I
STYLE 3:
STYLES:
PIN 1. ANODE
2. CATHODE
3. NC
a
DIM
A
2.
3.
4.
5.
S.
EMmER
COLl£CTOR
6. BASE
PIN1. ANODE
CATHODE
NC
EMITTER
COLl£CTOR
NC
2.
3.
4.
5.
6.
CATHODE
NC
OUTPUT
GROUND
VCC
STYLES:
STYLE.:
PINt ANODE
~ CATHoDE
3. NC
4. MAIN TERMINAL
5. SUBSTRATE
6. MAIN TERMINAL
PIN 1. LED 1 ANODE/LED 2 CATHODE
2. LED, CATHOOEJLEO 2 ANODE
3. NC
4. EMITTER
5. COLl£CTOR
6. BASE
CASE 7300-05
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M.1902.
2. CONTROWNG DIMENSION: INCH.
F4PL~r.
06PL
j
l
i-G
~
f f
PIN 1. ANODE
2. CATHODE
3. NC
4. EMITTER
a COLl£CTOR
8. BASE
SlYLE3:
PIN1. ANODE
2. CATHODE
3. NC
4. EMmER
a CDLl£CTOR
6. NC
A
B
C
D
}8~=r---r=-l
l±J
t
JL
1-$-lo.13(0.005)®ITI A®I B®I
SlYLE1:
DIM
rL-j,
,
J
K8PL
F
SEAnNG
PLANE
1-$-1 0.13 (0.005) ® ITI B® I A® I
SlYLE5:
PIN 1. ANODE
~ CATHODE
3. NC
4. OUTPUT
5. GROUND
Vee
..
CASE 730F-114
13-13
STYLE 6:
PIN'. ANODE
2. CATHODE
3. NC
4. MAIN TERMINAL
a SUBSTRATE
MAIN TERMINAL
..
G
H
J
K
L
INCHES
.,N
MAX
0.32<1 D.35O
0.240 0260
0.095 0.183
0.D40 0.070
0.010 0.014
O.'DOBSC
0.000 aOO8
0.D08 0.0'2
0.D06 0.035
0.327.5
>7.5
0.5
-
10 x 1012
-
0.4
-
-
-
-
-
VDE Rating for Motorola 6-pin DIP Optoisolators
All Molorola B-pin DIP Oploisolalors meel or exceed Ihe requiremenls of above lisled VDE and DIN IEC Slandards.
* Impulse discharge withstand voltage.
(I) To salisfy 8.0 mm creepage palh on a PC board Motorola offers a special lead bend of 0.4 inch on allS·pin dual·in-line oploisolalors. Order by attaching 'T' 10
the end of Ihe Molorola part number.
(2) VDE standards (translaled into English language) and IEC standards can be ordered from the American Nalional Standard Inslilute ANSI, 1430 Broadway, N.V.•
N. V.IOOI8. Sales Department. 212-642·4900.
(3) Creepage path distances are measured from lead 10 lead across the lop, bottom and ends of the package body.
(4) VDE 0864lesting is an option; the suffix letter ''Y'' must be added to the standard number.
(5) For more information regarding the use of VDE approved devices. refer 10 "VDE Circuit Board Layout Design Rules" in the Applications Information section.
14-4
VDE 0884 Approved Optocouplers
Prepared by: Horst Gempe
Discrete Applications Engineering
INTRODUCTION
In mid 1990 Motorola received VDE 0884 approval for all
optocouplers in a dome package. This opens an even wider
range of safe isolation applications than with the former
approval against VDE 0883. For example, optocouplers which
have VDE 0884 approval are now accepted in appliances and
it is expected that many other equipment standards will follow.
VDE 0884 is a new optocoupler standard for safe isolation.
In many parts it has the same tests as the older VDE 0883
optocoupler standard, but there are two significant additions in
safety philosophy which make this standard unique against all
others. These additions are the introduction of the partial
discharge test and the specification of the safety temperature,
current and power dissipation ratings. Both contribute to an
even safer isolation and avoid confusion of worst case
conditions in order to still guarantee the safe isolation of
optocouplers over the lifetime of the equipment.
Many parameters and classifications of this new
optoisolator standard are harmonized with the newest basic
safety standards such as isolation coordination standards
VDE 0109, IEC664, and IEC664A, as well as equipment
standards such as those for office machines and data
processing equipment DIN/IEC950.
These new standards define and classify the environment
to which the insulation system is exposed. The major new
variables are the installation category and the pollution
degree. Optocouplers are now rated to these new criteria.
VDE plans to incorporate the partial discharge criterion into
the basic standards, as well as into the individual equipment
standards in the near future.
While the new standards are much better defined than the
older ones, they demand intimate knowledge from the
equipment designer about all conditions to which the
equipment is exposed and detailed information about the
safety parameters and ratings of the optoisolator.
This application note informs the user of Motorola
optoisolators about the VDE safety ratings, classification and
performance, and gives guidance in applying these ratings to
the requirements of the individual equipment standards.
VDE Data Sheet
Table 1 shows the Motorola Dome Optocouplers for safe
electrical isolation in accordance with VDE 0884.
Table 1. VDE 0884 Ratings for Motorola Dome Optocouplers - VDE Approval Document No. 62054
Description
Symbol
Rating
Unit
Installation category (DIN VDE 0109,12183, Table 1)
Rated line voltage < 600 Vrms
-
Ito III
-
Rated line voltage < 300 Vrms
-
ItolV
Climatic category (DIN IEC 68 part 1/09.80)
-
55/100/21
Pollution degree (DIN VDE 0109, 12/83)
-
2
-
Creepage path between input and output
>7.5
mm
>7.5
mm
Thickness through insulation (insulation barrier)
-
Comparative tracking index (DIN IEC 1121VDE 303 part 1/06.84)
Isolation group per VDE 0109
Clearance between input and output
Standard leadform 0.3"
Specialleadform 0.4"
14-5
> 10
mm
0.5
mm
CTI
175
-
-
lila
-
Table 1. VDE 0884 Ratings for Motorola Dome Optocouplers - VDE Approval Document No. 62054 (cont)
Description
Symbol
Rating
Unit
TA= 25°C
Riso
1012
Q
TA=I00°C
Riso
1011
Q
TA = 175°C
Riso
109
Q
Maximum operating peak voltage
VIORM
Vprl(l)
800
Vpk
1280
Vpk
Vpr2(I)
960
Vpk
Isoiation resistance at VI/O = 500 Vdc
Production input to output test voltage, 1 second
Vpr l = 1.6 x VIORM, Partial discharge < 5 pC
Qualification input to ouptut test voltage, 1 minute
Vpr2 = 1.2 VIORM, Partial discharge < 5 pC
Maximum transient overvoltage Vtr = 10 seconds Qualification Test
Vtr
6000
Vpk
Operating Temperature
TA
--55 to +100
°C
Storage Temperature
Tstg
-55 to +150
°C
Maximum Safety Temperature, Power and Current Ratings in Case of a Single Fault Condition
Description
Symbol
Rating
Maximum package safety temperature
Tsi
175
°C
Maximum LED safety input current, Psi = 0, TA = 25°C
(Linear derate from 25°C to zero at TA = Tsi = 175°C)
lsi
400
rnA
Maximum detector safety power dissipation, TA = 25°C
(Linear derate from 25°C to zero at TA = Tsi = 175°C)
Psi
800
mW
Unit
(1) The isolation partial discharge tests Vpr l, Vpr2 in accordance with VDE 0884 are pertormed after high voltage withstand (hipot) tests.
Explanation of VDE 0884 ratings
Climatic Category 551100/21
Installation Category
These numbers specify the environmental condition for the
approval test. The temperature range is -55 to +1 OO°C with a
21 day humidity soak.
The four installation categories are based on the principles
of insulation coordination as found in VDE 0109 and IEC 664.
These standards categorize and specify the expected line
transients to earth ground within an ac line installation and
distribution system.
The highest transients are expected at installation
category four, which is the primary supply level from overhead
lines or underground cable systems and its associated spark
gap and over-current protection equipment. The locations are
the main fuse and the service entrance. For a 380 V ac rms
system, the peak transient voltage may be up to 6000 Vpk.
Installation category three follows installation category four
and is the fixed electrical installation with its individual circuit
breakers for each branch within a building. For a 380/220 Vrms
installation peak, transients of 4000 V are expected.
Installation category two is portable equipment such as
appliances which use the outlets of the fixed electrical
installation. Transients of up to 2500 Vpk are expected.
Installation category one is special equipment or individual
circuits within portable equipment which operate on the
secondary voltage of a power supply or transformer with max
60 V ac or dc peak. Examples are telecommunication, data
processing and other electronic equipment. Even in these
cases, transients of up to 500 Vpk in respect to earth ground
are pOSSible, unless transient suppression is provided.
Pollution Degree
There are four pollution degrees. Pollution degree one
specifies non-conductive or only dry non-conductive pollution
which is found inside most electronic equipment in a controlled
environment such as an office.
Pollution degree 2 assumes normally dry, non-conductive
pollution with occasional temporary conductivity caused by
condensation. Examples are appliances like washers,
dishwashers and equipment in non-temperature controlled
environments.
Pollution degree three has expected conductive pollution,
and pollution degree four assumes persistent conductive
pollution as found in an outside environment such as rain or
snow.
Creepage and Clearance
The creepage path is the shortest distance on the surface
of the optocoupler package between input and output leads.
The clearance is the shortest distance between input and
output leads through air. A special lead bend is available which
increases this distance and guarantees an adequate
creepage part on the circuit board.
14-6
Comparative Tracking Index
Maximum Transient Overvoltage, Vtr
This index indicates a insulator's withstand capability to
surface deterioration caused by sparks or leakage currents
over the creepage path. This may be the case when
conductive pollution occurs. CTI is a relative number and is
used to compare insulation materials. The higher the number,
the better the resistance to deterioration. Glass and ceramics
are very resistant and have a CTI of >600. Some circuit board
materials are <100.
This is the classical hipot test which may lead to erosion,
decomposition and consequent breakdown of the insulation
barrier when the device is exposed over a long period of time.
The qualification test is 10 seconds and must be considered to
weaken the insulation barrier.
Many standards still demand the hipot test. To comply with
these standards, Motorola tests 100 percent of all
optocouplers for one second to a minimum of 6000 V ac peak
(4200 V ac rms), while monitoring the leakage current. After
this test, the devices have to pass the 1 second partial
discharge test.
Isolation Group
The isolation group characterizes insulators to their
resistance to tracking. Insulators which remain unaffected by
the CTI test belong to isolation group I; insulators which erode
or decompose with carbon residues are found in isolation
group III.
•
CTI-rating
•
:<:600
•
•
100-600
II
175-400
Ilia
•
100-175
IIIb
Maximum Safety Temperature, Power and
Safety Ratings
The user of the optocoupler has to take carethatthe device
is never operated above the specified maximum safety
values. These ratings exceed the maximum ratings for proper
electrical function of the part. The safety ratings only
guarantee safe isolation under a single failure mode; they do
not mean normal operating conditions.
Isolation group
Partial Discharge Theory and Test
The partial discharge only bridges a part of the insulation
barrier between two conductors. These discharges may be
adjacent to one of the conductors or within the insulation
barrier. They may occur in cavities within the insulation or in
layers with different dielectric properties. Sharp edges on
conductors, cavities in solid insulation, or air gaps between a
conductor and the insulation material, and layers with different
dielectric materials do create highly localized electrical fields
which lead to discharges. The energies of these discharges
are very small, but over time they may lead to progressive
deterioration of the dielectric properties of the insulation
barrier until breakdown occurs. The length of time to
destruction of the insulation barrier depends on the discharge
energies involved and the insulation materials withstand
capability to the discharges.
Isolation Resistance
In the qualification testthis parameter is measured after the
environment's 21-day humidity soak and a short surface dry at
ambient temperature at 500 Vdc, and at the maximum safety
temperature Tsi = 175°C. Motorola tests this parameter in
production during the transient withstand test (hipot test).
Maximum Operating Peak Voltage VIORM
This is the maximum repetitive peak voltage for safe
isolation. In some equipment, it is not necessarily the peak line
voltage. Switching power supplies, for example, may develop
repetitive peak voltages between primary and secondary
circuits exceeding the ac peak voltage by superimposing
inductive voltage transients of the flyback transformer onto the
line voltage.
Safe isolation of the insulation material is guaranteed when
the optocoupler is operated within this rating, since partial
discharge which might destroy the insulation barrier is
guaranteed not to be present.
Partial Discharge Test Voltage Vprl and V p r2
Partial discharge is a corona discharge in a part of the
insulation barrier caused by voids or locally high electrical field
gradients. Partial discharge may decompose or erode the
insulation material over time and lead to a permanent
insulation failure. The VDE 0884 safety philosophy demands
that the peak repetitive operating voltage is lower than the
partial discharge initiation and extinction voltage of the
optocoupler, thus avoiding the cause of an isolation
degradation or breakdown over time. All optocouplers have to
pass a partial discharge test at 1280 V ac peak for one second.
During this time the device is monitored for partial discharge
by a highly sensitive narrow band RF circuit and the device is
rejected when a partial discharge activity of 5 pico couloumbs
or larger is recorded.
14-7
Figure la. Corona Discharge on a Needle Point
Figure 1a shows that corona discharge is induced into the
air by a sharp needlepoint electrode which creates a high field
gradient very close to the point. The voltage necessary to
initiate corona discharge depends on the radius of the needle
point, the polarity, the properties of the surrounding gas and its
pressure. In this example, corona discharges start at 2700 V
with positive charge and 2000 V with negative charge into the
air at sea level atmospheric pressure and a needlepoint with a
curvature radius of -1 mil. Very sharp needlepoints show
discharges already at -500 V.
Figure 1b shows corona, or partial discharge between two
glass plates. Since this discharge finds place only within a part
of the insulation barrier, it is defined as partial discharge. The
electrical field gradient in the air between the glass plates is
much higher than within the glass plates because of the
difference of the dielectric constant between glass and air.
This arrangement is used to produce ozone, which
demonstrates the resistance of glass to corona discharge.
[
Figure 1b. Corona Discharge Between 'TWo Glass Plates
[
Figure 1c. Corona Discharge In the Void of an Insulator
Figure 1c shows a solid insulator with an enclosed void.
Corona discharge is initiated in this void by the same
mechanism as seen in Figure 1b.
Partial discharge in any test object has measurable
quantities such as a charge (q) which is expressed in pico
coulombs and a repetition rate (n.) per time unit which could
be 1/2 cycle or one second.
Wldeband Test Method
Figure 2 shows a simple detection method which consists
of a variable partial discharge free high voltage transformer, a
current limiting resistor, R1, a coupling capaCitor, C1 and a
load resistor R2. The partial discharge can be observed
directly with an OSCilloscope which should have a 100 MHz
bandwidth and a sensitivity of 1 mv/div. Partial discharges
generate short current pulses with a fast rise time in the ns
region which generates a signal on the load resistor. Coupling
capaCitor C1 is so dimensioned that it appears as a very low
impedance to the fast rising discharge pulses. For short
discharge pulses the signal amplitude on the load resistor is
proportional to the discharge energy within the device under
test.
14-8
Narrowband Test Method
In Figure 3, R2 is replaced by an LC resonance tank circuit.
The partial discharge pulses generate a dampened OSCillatory
waveform at the resonance frequency of the tank circuit. The
capacitive leakage current of the device under test is now
depressed due to the low impedance of the tank circuit at line
frequency. Narrowband test methods are used because of
their lower noise levels.
Calibration of the Detection Circuit
Discharges within the OUT cannot be directly measured,
butthey produce a signal on the terminal olthe load resistor or
LC tank circuit with an amplitude proportional to the discharge
energy within the insulation. This energy or charge is defined
as the apparent charge q. Apparent charge q can be simulated
by charges instantaneously injected into the test circuit. It is
now possible to correlate the response of the detection circuit
to known charges and calibrate the output response signal
amplitude to pico coulombs.
The energy q stored in a capacitor C at a voltage V is:
q =VxC.
Rl
OUT
Cl
SCOPE PROBE
J
R2
Figure 2. Wideband Partial Discharge Test Circuit
Rl
Figure 3. Narrowband Partial Discharge Test Circuit
Figure 4 shows a calibration generator consisting of a
known capacitance Cc and a square wave generator with fast
rise time (100 ns or less) and a known amplitude Vp and a
repetition rate of 120 Hz. Calibration of the entire detection
circuit is performed with the high voltage switched off. By
choosing Cc 10 pf and a square generator with an adjustable
peak voltage of .1 - 10 V, a partial discharge detection
systems response can be calibrated from 1 pC to 100 pC.
=
Rl
+-____._----.SCOPE PROBE
Cl
Cc
]
PULSE GENERATOR
Figure 4. Narrowband Partial Discharge Test Circuit with Calibrator
Partial Discharge Measurement
A very important parameter of partial discharge besides its
apparent charge q is the voltage at which it occurs, which is
called initiation voltage, and the voltage at which it
disappears, which is called extinction voltage. In most cases
14-9
the extinction voltage is found to be about 10 - 20% lower then
the initiation voltage. For measurement of the initiation
voltage, the ac voltage of the device under test is slowly raised
until partial discharge is observed. When the voltage is raised
further, more discharges per half cycle may be observed. Also
an increase of the energy of each individual discharge may be
noted. By lowering the ac voltage the discharges will subside
and the extinction voltage is found.
.
Great care must be taken that all high voltage conductors
are smooth and without sharp edges. This avoids corona
discharge into the surrounding air. Also incomplete galvanic
contact to the device under test might lead to micro arcs which
falsify the test results. The high voltage transformer must be
absolutely free of partial discharge and protected from line
transients and noise.
It is important to note that all partial discharge
measurements for optocouplers are performed with an ac
sinusoidal voltage of 50 or 60 Hz. Measurements of partial
discharge with dc voltage show different results in initiation,
extinction and repetition rates of the discharges.
VDE Standard Test Circuit
VDE uses the narrowband test method as shown in
Figure 3 and a calibration circuit as shown in Figure 4. The
center frequency of the tank circuit may be any value from
150 kHz upt05 MHz, butthe3dBbandwidth mustbe15 kHz.
Tank circuits with the center frequency olthe AM IF of 455 kHz
are commonly used in combination with a parallel resistor to
set the bandwidth. Calibrator rise time is 50 ns max and fall
time between 100 - 1000!1S. Coupling capacitor C must be
1 nF or greater. Partial discharge pulses of 1 pC must still be
detectable.
VDE Partial Discharge Qualification Test
This test is performed after the environmental stress as
described in Chapter 5 VDE qualification, test lot 1. The ac
voltage is raised with 100 V/sec. to Vinitial which is the
maximum transient withstand voltage Vtr sPeCified by the
manufacturer, and applied for 10 seconds. Partial discharge
may occur under this condition. The voltage is then lowered to
the manufacturer's specified voltage Vp r2, (which is 20%
higher than the specified operating voltage) and maintained
for 62 seconds. Partial discharge is monitored after a settling
time of one second. No discharges above 5 pC may occur.
See Figure 5.
Voltage curve in the partial discharge voltage measurement.
n
V
VINITIAL
\
VIORM
/
Voltage curve (ac) for type testing using environmental tests.
V
-/
Vpr
VIORM
/
Test voltage curve (ac) for routine tests.
Figure 5. Voltage curve In the Partial Discharge Voltage Measurement
14-10
Manufacturer Production Test
VOE 0884 Qualification Test
The test voltage is suddenly raised to Vpr1 which is 1.6
times the operating voltage VIORM; partial discharge is
monitored for one second. Devices with a partial discharge
above 5 pC are rejected.
Manufactures of optocouplers must supply samples to
VDE and pass all tests as shown below.
Sample size 80 units
•
Visual inspection
•
Isolation voltage (@ V pr1 ~ 1.6 VIORM)
•
Functional test
•
Creepage and clearance measurements
•
Isolation resistance (@500 Vdc)
•
Resistance to solder heat (260°C, 5 sec.)
Explanation of the Comparative Tracking
Index (CTI) Test
This test classifies insulation materials to their resistance
to deterioration caused by surface leakage currents in the
presence of conductive pollutants.
Platinum electrodes are placed onto samples of the mold
compound material used for the optocoupler's package. A
conductive pollutant consisting of a solution of NH4 CI and DI
water is dropped between two platinum electrodes which are
connected to an ac power source and a 0.5 A current circuit
breaker. The number of drops which can be applied until the
material under test decomposes and forms a conductive
creepage path depends on the electrode voltage and the
material itself. CTI is the voltage a test specimen can
withstand without tracking, which means without tripping the
circuit breaker when 50 drops are applied. CTI is found
statistically by conducting many tests with different voltages
where the amount of drops until the circuit breaker opens are
recorded. Short tests for verification of a CTI rating keep the
electrode voltage constant. Several samples have to pass 50
drops without signs of tracking.
Lot 1, 20 units
•
5 temperature cycles, dwell 3 hrs. at specified min.,
max. storage temperature.
•
Vibration, 10 to 2000 Hz, 0.75 mm, 10 g.
•
Shock, 100 g, 6 ms
•
Dry heat, 16 Hr, TA ~ 100°C, Viso ~ VIORM or min
700 Vpk
1 humid cycle @ TA ~ 55°C
•
•
Cold storage, 2 Hr., @ min. storage temperature.
•
Humid heat, 21 days, 40°C, RH 93%.
•
End test after room temp. dry of 6 Hrs. for partial
discharge @ VIORM x 1.2, 5 pC max., isolation resistance 1012 Q @ 500 Vdc max 25°C.
•
Isolation surge voltage 10 KV 50 discharges 1 nF,
Isolation resistance min.10g Q.
Lot 2, 30 units
•
Input overload safety test, t ~ 72 hrs., TA ~ Tsi, I ~ lsi
End test for partial discharge @ VIORM, 5 pC max.
•
Lot 3, 30 units
•
Output overload safety test, t ~ 72 Hrs., TA ~ Tsi,
P~Psi
•
14-11
End test for partial discharge @ VIORM, 5 pC max.
APPENDIX 2
Marking Information for Optoelectronic Products
OptoisolatorslOptocouplers
Motorola 6-PIN DIP and SOIC-8 devices are NOT marked with the various option suffixes listed below:
Suffix
Description
"S"
"F"
"SR2"
"FR2"
''i''
"L"
"V"
"Rl"
"R2"
Standard profile surface mount leadform (6-PIN only)
Low profile surface mount leadform (6-PIN only)
Tape and Reel for standard profile SIM (6-PIN only)
Tape and Reel for low profile SIM (6-PIN only)
Wide spaced 0.400" leadform (6-PIN only)
Solder dipped standard through hole (6-PIN only)
VOE 0884(1) tested and marked (6-PIN only)"
500 piece Tape and Reel (SOIC-8 only)
2500 piece Tape and Reel (SOIC-8 only)
Note: All of the above special option suffixes will be marked on Rails, Reels, and boxes.
* "V" suffix devices have a special partial discharge test and are marked with the VDE logo and 0884. The ''V'' will not be marked on the device.
Motorola or Customer
Part Number (ie MOC205)
Motorola or Customer
Part Number
,-L---1J'-1.......I-1.I_......, /
VDE Logo
Motorola or Customer
Part Number
2 Dig~ Work Week
Year Date Code
2 Dig~ Work Week
Year Date Code
Standard 6-PIN Optoisolator Marking
DevleeNo.
4N25
4N25A
4N26
4N27
4N28
4N29
4N29A
4NSO
4N31
4N32
4N32A
4N33
4N35
4N36
4N37
4N38
4N38A
CNX35
CNX36
CNX82
Marking
4N25
4N25A
4N26
4N27
4N28
4N29
4N29A
4N30
4N31
4N32
4N32A
4N33
4N35
4N36
4N37
4N38
4N38A
CNX35
CNX36
CNX82
DevieeNo.
CNX83
CNY17-1
CNV17-2
CNYI7-3
HIIAI
HI1A2
Hl1A3
HI1A4
HllA5
HI1A520
HllA550
HI1A5100
HilMI
HI1AA2
HllAA3
Hl1M4
HllAVI
Hl1AV1A
HllAV2
HI1AV2A
"V" Suffix 6-PIN Optolsolator
(VDE0884 Marking)
Marking
CNX83
CNVI7-1
CNVI7-2
CNV17-3
HIIAI
Hl1A2
HllA3
Hl1A4
HI1A5
HI1A520
HllA550
HI1A5100
HilMI
Hl1AA2
HI1AA3
HI1AA4
HllAVI
HilAV1A
HllAV2
HllAV2A
DevieeNo.
HllAV3
HllAV3A
HI1Bl
HllB2
HllB255
HIIDI
HI1D2
HllGI
HllG2
HllG3
Hill!
Hlll2
H21Al
H21A2
H21A3
H21Bl
H22Al
H22A2
H22A3
H22Bl
14-12
2 Dig~ Wor!< Week
Small Outline SOIC-8
Optoisolator Marking
Marking
HllAV3
HllAV3A
HllBI
H11B2
HI1B255
HI1Dl
HllD2
HI1Gl
Hl1G2
H11G3
HI1l!
HI1l2
H21Al
H21A2
H21A3
H21Bl
H22Al
H22A2
H22A3
H22Bl
DevieeNo.
MCA230
MCA231
MCA255
MCT2
MCT2E
MCT271
MCT272
MCT273
MCT274
MCT275
MFOD71
MFOD73
MFOD75
MFOE71
MFOE76
MLED91
MLED96
MLED97
MLED81
MLED930
Marking
MCA230
MCA231
MCA255
MCT2
MCT2E
MCT271
MCT272
MCT273
MCT274
MCT275
MFOD71
MFOD73
MFOD75
MF0E71
MFOE76
01
10
08
no marking
MLED930
Device No.
MOC2A40-5
MOC2A40-5F
MOC2A40-10
MOC2A40-10F
MOC2A60-5
MOC2A60-5F
MOC2A60-10
MOC2A60-10F
MOC70Hl
MOC7OH2
MOC70Pl
MOC70P2
MOC70Vl
MOC70Wl
MOC75T1
MOC119
MOC205
MOC206
MOC207
MOC211
MOC212
MOC213
MOC215
Marking
MOC2A40'5
MOC2A40·5F
MOC2A40·10
MOC2A40-10F
MOC2A60-5
MOC2A60-5F
MOC2A60-10
MOC2A60-10F
MOC70Hl
MOC7OH2
MOC70Pl
MOC70P2
MOC70Vl
MOC70Wl
MOC75Tl
MOCl19
205
206
207
211
212
213
215
Device No.
MOC216
MOC217
MOC221
MOC222
MOC223
MOC3009
MOC3010
MOC3011
MOC3012
MOC3020
MOC3021
MOC3022
MOC3023
MOC3031
MOC3032
MOC3033
MOC3041
MOC3042
MOC3043
MOC3061
MOC3062
MOC3063
M0C3081
Marking
216
217
221
222
223
MOC3009
MOC3010
MOC3011
MOC3012
MOC3020
MOC3021
MOC3022
MOC3023
MOC3031
MOC3032
MOC3033
MOC3041
MOC3042
MOC3043
M0C3061
MOC3062
MOC3063
MOC3081
Device No.
MOC30B2
MOC30B3
MOCS007
MOCS008
MOC5009
MOC8020
MOCB021
MOCB050
MOCB060
MOC8080
MOCB100
MOCB10l
MOCB102
MOCB103
MOCB104
MOC8111
MOCBl12
MOCBl13
MOCB204
MRD300
MRD310
MRD360
MRD370
Marking
MOC30B2
MOC3083
MOC5007
MOC500B
MOC5009
MOCB020
MOCB021
MOCB050
MOCB060
MOC8080
MOCB100
MOCB10l
MOCB102
MOCB103
MOCB104
MOC8111
MOCBl12
MOCBl13
MOCB204
MRD300
MRD310
MRD360
MRD370
Device No.
MRD500
MRD510
MRDB21
MRD901
MRD911
MRD921
MRD950
MRD301 0
MRD3050
MRD3056
MRD5009
Sl5500
Sl5501
Tll111
TIl112
nl113
nl116
nl117
TIl119
Tll126
Discrete Emitters/Detectors
M
92
Year Da1e Code
o
12
2 Digit Device Code
(Last 2 digits of ODl device
number; i.e., OD12012)
Device No.
08,
Workweek Date Code
14-13
MLED91
MRD911
MRD921
MRD901
MLED97
MLED96
MOC9000
MRD950
Marking
01
03
05
07
08
10
11
12
Marking
MRD500
MRD510
no marking
07
03
05
12
MRD3010
MRD3050
MRD3056
MRD5009
Sl5500
Sl5501
Tll111
TIl112
nl113
nll16
nl117
TIl119
Tll126
APPENDIX 3
The following devices are included in the Motorola Optoisolator portfolio, however they do not have individual dedicated Data
Sheets. Refer to the suggested standard Data Sheet for typical electrical values and complete graphs.
Device Number
TIL112
TIL111
H11A520
MCT2
MCT2E
TIL116
MCT271
H11A550
TIL117
MCT275
Refer to Data Sheet
4N25
4N25
MOC8100
4N25
4N25
4N25
CNY17-1
MOC81 00
MOC8100
CNY17-2
Device Number
Page'
4-3
4-3
4-98
4-3
4-3
4-3
4-19
4-98
4-98
4-19
MCT272
H11A5100
MCT273
MCT274
H11B255
MCA230
MCA255
MCA231
TIL113
TIL119
14-14
Refer to Data Sheet
M0C8100
4N35
4N35
CNY17-3
4N30
4N30
4N30
H11B2
4N32
MOC119
Page'
4-98
4-11
4-11
4-19
4-7
4-7
4-7
4-34
4-7
4-51
APPENDIX 4
Definitions, Characteristics, and Ratings
CTR
Current Transfer Ratio - The ratio of output current to input current, at a specified bias, of an opto coupler.
dv/dt
Commutating dv/dt - A measure of the ability of a triac to block a rapidly rising voltage immediately afterconduction of the opposite polarity.
Coupled dv/dt - A measure of the ability of an opto thyristor coupler to block when the coupler is subjected to
rapidly changing isolation voltage.
E
Luminous Flux Density (Illuminance) (lumenslft. 2 = ft. candles) - The radiation flux density of wavelength within
the band of visible light.
H
Radiation Flux Density (irradiance) (mW/cm2) - The total incident radiation energy measured in power per unit
area.
ICEO
Collector Dark Current - The maximum current through the collector terminal of the device measured under
dark conditions, (H ~ 0), with a stated collector voltage, load resistance, and ambient temperature. (Base open)
10
Dark Current - The maximum reverse leakage current through the device measured under dark conditions, (H
0), with a stated reverse voltage, load resistance, and ambient temperature.
~
Input Trigger Current - Emitter current necessary to trigger the coupled thyristor.
Collector Light Current - The device collector current measured under defined conditions of irradiance,
collector voltage, load resistance, and ambient temperature.
Rs
Series Resistance - The maximum dynamic series resistance measured at stated forward current and ambient
temperature.
SCR
Silicon Controlled Rectifier- A reverse blocking thyristor which can block or conduct in forward bias, conduction
between the anode and cathode being initiated by forward bias of the gate cathode junction.
Photo Current Fall Time - The response time for the photo-induced current to fall from the 90% point to the 10%
pOint after removal of the GaAs (gallium-arsenide) source pulse under stated conditions of collector voltage, load
resistance and ambient temperature.
Photo Current Rise Time - The response time for the photo-induced current to rise from the 10% point to the
90% point when pulsed with the stated GaAs (gallium-arsenide) source under stated conditions of collector
voltage, load resistance, and ambient temperature.
Triac
A thyristor which can block or conduct in either polarity. Conduction is initiated by forward bias of a gate-MTI junction.
Tstg
Storage Temperature
V(BR)R
Reverse Breakdown Voltage ambient temperature.
V(BR)CBO
Collector-Base Breakdown Voltage - The minimum dc breakdown voltage, collector to base, at stated collector
current and ambient temperature (Emitter open and H ~ 0)
V(BR)CEO
Collector-Emitter Breakdown Voltage - The minimum dc breakdown voltage, collector to emitter, at stated
collector current and ambient temperature. (Base open and H ~ 0)
V(BR)ECO
Emitter-Collector Breakdown Voltage - The minimum dc breakdown voltage, emitter to collector, at stated
emitter current and ambient temperature. (Base open and H ~ 0)
VCBO
Collector-Base Voltage - The maximum allowable value of the Collector-base voltage which can be applied to
the device at the rated temperature. (Base open)
VCEO
Collector-Emitter Voltage - The maximum allowable value of collector-emitter voltage which can be applied to
the device at the rated temperature. (Base open)
VECO
Emitter-Collector Voltage - The maximum allowable value of emitter-collector voltage which can be applied to
the device at the rated temperature. (Base open)
The minimum dc reverse breakdown voltage at stated diode current and
Forward Voltage - The maximum forward voltage drop across the diode at stated diode current and ambient
temperature.
14-15
APPENDIX 4
(Continued)
Isolation Surge Voltage - The dielectric withstanding voltage capability of an optocoupler under defined conditions and time.
Reverse Voltage - The maximum allowable value of dc reverse voltage which can be applied to the device at
the rated temperature.
Wavelength of maximum sensitivity in micrometers.
14-16
APPENDIX 5
Standard Warranty Clause
Seller warrants that its products sold hereunder will at the time of shipment be free from defects in
material and workmanship, and will conform to Seller's approved specifications. If products are not
as warranted, Seller shall, at its option and as Buyer's exclusive remedy, either refund the purchase
price, or repair, or replace the product, provided proof of purchase and written notice of
nonconformance are received within the applicable periods noted below and provided said
nonconforming products are, with Seller's written authorization, returned in protected shipping
containers FOB Seller's plant within thirty (30) days after expiration of the warranty period unless
otherwise specified herein. If product does not conform to this warranty, Seller will pay for the
reasonable cost of transporting the goods to and from Seller's plant. This warranty shall not apply
to any products Seller determines have been, by Buyer or otherwise, subjected to improper testing,
or have been the subject of mishandling or misuse.
THIS WARRANTY EXTENDS TO BUYER ONLY AND MAY BE INVOKED BY BUYER ONLY FOR
ITS CUSTOMERS. SELLER WILL NOT ACCEPT WARRANTY RETURNS DIRECTLY FROM
BUYER'S CUSTOMERS OR USERS OF BUYER'S PRODUCTS. THIS WARRANTY IS IN LIEU
OF ALL OTHER WARRANTIES WHETHER EXPRESS, IMPLIED OR STATUTORY INCLUDING
IMPLIED WARRANTIES OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE.
Seller's warranty shall not be enlarged, and no obligation or liability shall arise out of Seller's
rendering of technical advice and/or assistance.
A. lime periods, products, exceptions and other restrictions applicable to the above warranty are:
(1) Unless otherwise stated herein, products are warranted for a period of one (1) year from date
of shipment.
(2) Device ChipsIWafers. Seller warrants that device chips or wafers have, at shipment, been
subjected to electrical test/probe and visual inspection. Warranty shall apply to products
returned to Seller within ninety (90) days from date of shipment. This warranty shall not apply
to any chips or wafers improperly removed from their original shipping container and/or
subjected to testing or operational procedures not approved by Seller in writing.
B. Development products and Licensed Programs are licensed on an "AS IS" basis. IN NO EVENT
SHALL SELLER BE LIABLE FOR ANY INCIDENTAL OR CONSEQUENTIAL DAMAGES.
14-17
14-18
Section
Fifteen
Index and Cross
Reference
15-1
Index and Cross Reference
The following table represents a cross-reference guide for all Opto devices which are manufactured by Motorola.
Where the Motorola part number differs from the Industry part number, the Motorola device is a "form, fit and function"
replacement for the Industry part number; however, some differences in characteristics and/or specifications may
exist.
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Motorola
Industry
Nearest
Part Number Replacement
MRD911
MRD911
MRD911
MRD911
4·3
4·3
7·30
7-30
7·30
7·30
CNX35
CNY17·1
CNY17·2
CNY17·3
CNYl7-4
CNY17·L
CNY17·M
Motorola
Similar
Replacement
CNX35
CNY17·1
CNY17·2
CNY17·3
Page
Number
2N25
2N25A
2N57n
2N5778
2N5779
2N5780
4N25
4N25A
4N25
4N25A
4N26
4N27
4N28
4N29
4N25
4N25A
4N26
4N27
4N28
4N29
4·3
4·3
4·3
4-3
4·7
CNY17·N
CNY17G·F·l
CNY17G·F·2
CNY17G·F·3
CNY18
CNY21
4N29A
4N30
4N31
4N32
4N32A
4N33
4N35
4N29A
4N30
4N31
4N32
4N32
4N33
4N35
4·7
4·7
4·7
4-7
4-7
4-7
4·11
CNY28
CNY29
CNY33
CNY35
CNY36
CNY37
CNY47
H21Al
H21Bl
HllDl
Hl1AA2
MOC70Ul
MOC70Tl
MCT271
4N36
4N37
4N38
4N38A
5082·4203
5082-4204
5082·4207
4N36
4N37
4N38
4N38A
MRD500
MRD500
MRD500
4-11
4·11
4-15
4·15
7·22
7·22
7·22
CNY47A
CNY48
CNY51
COY10
COY11
COYl1B
COYl1C
MCT271
4N32
CNY17·3
MLED930
MLED930
MLED930
MLED930
4·7
4·19
7·11
7·11
7·11
7·11
5082·4220
BP101
BP102
BPW14
BPW24
BPW30
BPW39A
MRD500
7·22
COY12
COY12B
COY13
COY14
COY15
COY31
COY32
MLED930
MLED930
4N26
4N25
4N26
MLED930
MLED930
7·11
7·11
4·3
4·3
4-3
7·11
7·11
BPX25
BPX25A
BPX29
BPX29A
BPX37
BPX38
BPX43
MRD300
MRD370
MRD310
MRD370
MRD300
MRD3055
MRD300
7·16
4N26
MLED81
4N26
4·3
4-3
4·3
7·2
4·3
BPX58
BPX59
BPY62
CUOO
CL110
CL110A
CL110B
MRD300
MRD360
MRD3055
7·16
7·19
4-3
MRD3050
MRD3050
MRD300
MRD901
MRD360
MRD901
7·16
7·16
7·16
MLED930
MLED930
MLED930
MLED930
CU·l0
CLI·2
CU·3
CU·5
CLR2050
CLR2080
CLR211 0
4N26
MRD3050
MRD360
MRD310
CLR2140
CLR2150
CLR2160
CLR2170
CLR2180
MRD310
MRD300
MRD300
MRD370
MRD360
7-16
7·28
7·19
7·28
4N33
4N38
4N35
7·11
7·11
7·11
7·11
4·7
4·15
4·11
4-3
7·19
7·16
7·16
7·16
7·16
7·19
CNY17·3
CNY17·2
CNY17·3
CNY17·3
CNY17·1
CNY17·2
CNY17·3
4N25
4N25
COY40
COY41
COY80
COY99
EP2
EPY62·1
EPY62·2
MRD3055
MRD3056
EPY62·3
FCD810
FCD810A
FCD810B
FCD810C
FCD810D
FCD820
MRD310
4N28
4N28
4N28
4N28
4N28
TIL116
FCD820A
FCD820B
FCD820C
FCD820D
FCD825
FCD825A
FCD825B
TIL116
TIL116
TIL116
TIL116
FCD825C
FCD825D
FCD830
FCD830A
FCD830B
15-2
4N26
4N26
4·19
4·19
4·19
4·19
4·19
4·19
4·19
4·19
4·19
4-19
4·3
4·3
8·2
8·6
4·38
4·27
8·10
8·10
7·16
4·3
4·3
4·3
4-3
4·3
TIL117
TIL117
TIL117
TIL117
TIL117
TIL116
TIL116
TIL116
Index and Cross Reference
Industry
Part Number
Motorola
Nearest
Replacement
(continued)
Motorola
Similar
Replacement
Page
Number
FCD830C
FCD830D
FCD831
FCD831A
FCD831B
FCD831C
FCD831D
TIL116
TIL116
TIL116
TIL116
TIL116
TIL116
TIL116
FCD836
FCD836C
FCD836D
FCD850
FCD850C
FCD850D
FCD855
4N28
4N28
4N28
4N29
4N29
4N29
4-3
4-3
4-3
4-7
4-7
4-7
MLED930
MLED930
MRD300
MRD300
7-11
7-11
7-11
7-16
7-16
4-30
4-30
4-30
4-30
4-30
4-34
4-34
H11B255
H11D1
H11D2
H11D3
H11D4
H11G1
H11G2
H11B255
H11D1
H11D2
H11D1
H11D2
H11G1
H11G2
4-38
4-38
4-38
4-38
4-41
4-41
H11G3
H11J1
H11J2
H11J3
H11J4
H11J5
H11L1
H11G3
MOC3011
MOC3010
MOC3011
MOC3010
MOC3010
H11L1
4-41
4-55
4-55
4-55
4-55
4-55
4-44
H11l2
H21A1
H21A2
H21A3
7-16
H11l2
H21A1
H21A2
H21A3
H21A4
H21A5
H21B1
4-44
8-2
8-2
8-2
8-2
8-2
8-6
MRD360
MOC3009
MOC3010
7-16
7-16
7-16
7-16
7-19
4-55
4-55
H21B2
H21B3
H22A1
H22A2
H22A3
H22A4
H22A5
H21B2
H21B3
H22A1
H22A2
H22A3
MOC3011
MOC3012
MOC3020
MOC3023
H11A5
CNY17-2
CNY17-3
4-55
4-55
4-59
4-59
4-23
4-19
4-19
H22B1
H22B2
H22B3
H22L1
H22l2
H23A1
H23A2
H22B1
H22B2
H22B3
MOC75U1
MOC75U2
4-19
4-19
4-19
4-19
4-19
7-16
7-16
H11B255
FPT400
FPT450A
FPT500
FPT500A
FPT51 0
FPT510A
FPT520
MRD360
GFH600
GFH601
GFH601
GFH601
GFH601
GG686
GS600
MRD300
MRD300
MRD300
MRD3054
MRD3055
MRD300
MRD300
MRD300
MRD300
MRD300
III
I
II
III
IV
Page
Number
H11AV1A
H11AV2
H11AV2A
H11AV3
H11AV3A
H11B1
H11B2
H11B255
H11B255
MLED930
GE3011
GE3012
GE3020
GE3023
GEPS2001
GFH600 I
GFH600 II
Motorola
Similar
Replacement
H11AV1A
H11AV2
H11AV2A
H11AV3
H11AV3A
H11B1
H11B2
FCD855C
FCD855D
FPE100
FPE410
FPE500
FPT120
FPT120C
FPT520A
FPT530A
FPT550A
FPT560
FPT570
GE3009
GE3010
Motorola
Industry
Nearest
Part Number Replacement
CNY17-3
CNY17-1
CNY17-2
CNY17-3
CNY17-3
MRD300
MRD300
7-19
7-16
7-16
7-16
H21A1
H21A2
H21B1
H22A1
H22A2
8-6
8-6
8-2
8-2
8-2
8-2
8-2
MLED91+MRD901
MLED91 +MRD901
8-6
8-6
8-6
8-18
8-18
7-4,7-28
7-4,7-28
H23B1
H23L1
H2A6
H74A1
H74C1
H74C2
1L1
MUED91 +MRD901
MLED91 +MRD950
H22A3
4N26
MOC5008
MOC3020
4N25
7-4,7-28
7-4,7-28
8-2
4-3
4-79
4-59
4-3
4N35
4N25
CNY17-3
CNY17-2
CNY17-3
MOC205
MOC206
4-11
4-3
4-19
4-19
4-19
5-2
5-2
GS603
GS606
GS609
GS610
GS612
GS670
GS680
MRD300
MRD300
MRD300
MRD300
MRD3050
MRD3050
MRD300
7-16
7-16
7-16
7-16
7-16
1L12
1L16
112
11201
11202
11205
11206
GS683
GS686
H11A1
H11A2
H11A3
H11A4
H11A5
MRD300
MRD300
H11A1
H11A2
H11A3
H11A4
H11A5
7-16
7-16
4-23
4-23
4-23
4-23
4-23
11207
11211
11212
11213
11215
11216
11217
MOC207
MOC211
MOC212
MOC213
MOC215
MOC216
MOC217
5-2
5-5
5-5
5-5
5-8
5-8
5-8
H11A5100
H11A520
H11A550
H11M1
H11AA2
H11M3
H11M4
H11AV1
H11A5100
H11A520
H11A550
H11M1
H11AA2
H11M3
H11M4
H11AV1
4-27
4-27
4-27
4-27
4-30
11221
11222
11223
11250
11251
11252
1L30
1L31
MOC221
MOC222
MOC223
H11M1
H11M1
H11M4
MCA230
MCA231
5-11
5-11
5-11
4-27
4-27
4-27
15-3
Index and Cross Reference
Industry
Part Number
IL410
IL5
IL55
IL74
11.A30
ILA55
ILCA2-30
ILCA2-55
IRL40
L14F1
L14F2
L14G1
L14G2
L14G3
L14H1
L14H2
L14H3
L14H4
LED56
LED56F
MAH120
Motorola
Nearest
Replacement
(continued)
Motorola
Similar
Replacement
MOC3063
4N25
4-71
4-3
4N35
4N33
4N33
4-11
4-7
4-7
MCA255
Motorola
Industry
Nearest
Part Number Replacement
Page
Number
MFOD102F
MFOD102F
MFOD104F
MFOD104F
MFOD1100
MFOD1100
MFOD11OF
MCA230
H11B255
MLED930
MRD360
MRD370
MRD300
MRD310
MRD310
MRD901
MRD901
MRD901
MRD901
MLED930
MLED930
MRD360
7-16
7-16
7-16
MFOD110F
MFOD202F
MFOD2202
MFOD2302
MFOD2404
MFOD2405
MFOD302F
7-28
7-28
7-28
7-28
7-11
7-11
7-19
MFOD404F
MFOD405F
MFOD71
MFOD72
MFOD73
MFOD75
MFODC100WP
4-41
4-41
4-41
4-7
4-7
MFOE102F
MFOE103F
MFOE106F
MFOE107F
MFOE108F
MFOE1100
MFOE1101
7-11
7-19
MFOD1100
MFOD1100
MFOD1100
MFOD1100
MFOD1100
MFOD1100
MFOD1100
MFOD11 00
MFOD1100
MFOD1100
MFOD1100
MFOD2404
MFOD2405
MFOD1100
MFOE1100
MFOE1101
9-30
9-30
9-30
9-32
9-32
9-26
9-26
MFOE1102
MFOE1200
MFOE1201
MFOE1202
MFOE1203
MFOE71
MFOE76
9-26
9-30
9-32
9-32
9-32
9-21
9-23
MLED91
MLED91
MLED96
MLED97
MLED81
7-4
7-4
7-7
7-9
7-2
7-4
7-4
MCA230
MCA231
MCA255
H21B1
MOC3009
MOC3010
MOC3011
8-6
4-55
4-55
4-55
MFOE1102
MFOE1200
MFOE1201
MFOE1202
MFOE1203
MFOE71
MFOE76
MCP3012
MCP3020
MCP3021
MCP3022
MCP3023
MCP3030
MCP3031
MOC3012
MOC3020
MOC3021
MOC3022
MOC3023
MOC3031
MOC3031
4-55
4-59
4-59
4-59
4-59
4-63
4-63
MLED15
MLED71
MLED76
MLED77
MLED81
MLED92
MLED93
MCP3032
MCP3033
MCP3040
MCP3041
MCP3042
MCP3043
MCS2400
MOC3032
MOC3033
MOC3041
MOC3041
MOC3042
MOC3043
MCS2400
4-63
4-63
4-67
4-67
4-67
4-67
MLED930
MLED930
MLED94
MLED95
MLEDC1000WP MLEDC1000P
MOC1000
4N26
MOC1001
4N25
MOC1002
4N27
MCT2
MCT21 0
MCT2200
MCT2201
MCT2202
MCT26
MCT270
MCT2
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT2n
MCT271
MCT272
MCT273
MCT274
MCT275
MCT2E
MCT5200
MCT5201
MEK730
MEK760
MES560
MES760
MFOD100
MCT2E
4N26
4N35
CNY17-1
4-19
4-11
CNY17-3
CNY17-3
MLED81
MLED81
MLED97
MLED91
4-19
4-19
7-2
7-2
7-9
7-4
7-22
4N35
MRD500
15-4
9-15
9-15
9-15
9-15
9-17
9-19
9-15
MFOE1200
MFOE1200
MFOE1200
MFOE1201
MFOE1202
MCA230
MCA231
MCA255
MCA8
MCP3009
MCP3010
MCP3011
4-11
4-11
4-11
4-19
4-3
4-11
9-15
9-15
9-15
9-15
9-15
9-15
9-15
9-17
9-19
9-2
9-5
9-8
9-11
10-2
H11G1
H11G2
H11G3
MCA230
MCA230T
4N35
4N35
4N35
CNY17-2
Page
Number
MFOD2404
MFOD2405
MFOD71
MFOD72
MFOD73
MFOD75
MFODC1100P
MCA11G1
MCA11G2
MCA11G3
MCA2230
MCA2230Z
MCA2231
MCA2255
4N33
4N33
Motorola
Similar
Replacement
MLED91
MLED91
MLED91
MLED91
7-11
7-4
7-4
10-6
4-3
4-3
4-3
MOC1003
MOC1005
MOC1006
MOC119
MOC1200
MOC205
MOC206
4N28
4N26
MOC119
4N29
MOC205
MOC206
4-3
4-3
4-15
4-51
4-7
5-2
5-2
MOC207
MOC211
MOC212
MOC213
MOC215
MOC216
MOC217
MOC221
MOC207
MOC211
MOC212
MOC213
MOC215
MOC216
MOC217
MOC221
5-2
5-5
5-5
5-5
5-8
5-8
5-8
5-11
MOC222
MOC223
MOC3009
MOC3010
MOC3011
MOC3012
MOC3020
MOC222
MOC223
MOC3009
MOC3010
MOC3011
MOC3012
MOC3020
5-11
5-11
4-55
4-55
4-55
4-55
4-59
4N38
Index and Cross Reference
Industry
Part Number
Motorola
Nearest
Replacement
(continued)
Motorola
Similar
Replacement
Page
Number
Motorola
Industry
Nearest
Part Number Replacement
Motorola
Similar
Replacement
Page
Number
MOC3021
MOC3022
MOC3023
MOC3030
MOC3031
MOC3032
MOC3033
MOC3021
MOC3022
MOC3023
MOC3031
MOC3031
MOC3032
MOC3033
4-59
4-59
4-59
4-63
4-63
4-63
4-63
MOC7823
MOC8020
MOC8021
MOC8030
MOC8050
MOC8060
MOC8080
MOC70U3
MOC8020
MOC8021
MOC8030
MOC8050
MOC8060
MOC8080
8-10
4-82
4-82
4-86
4-86
4-90
4-94
MOC3040
MOC3041
MOC3042
MOC3043
MOC3060
MOC3061
MOC3062
MOC3041
MOC3041
MOC3042
MOC3043
MOC3061
MOC3061
MOC3062
4-67
4-67
4-67
4-67
4-71
4-71
4-71
MOC8100
MOC8101
MOC8102
MOC8103
MOC8104
MOC8111
MOC8112
MOC8100
MOC8101
MOC8102
MOC8103
MOC8104
MOC8111
MOC8112
4-98
4-102
4-102
4-102
4-102
4-105
4-105
MOC3063
MOC3080
MOC3081
MOC3082
MOC3083
MOC5007
MOC5008
MOC3063
MOC3081
MOC3081
MOC3082
MOC3083
MOC5007
MOC5008
4-71
4-75
4-75
4-75
4-75
4-79
4-79
MOC8113
MOC8204
MOC8205
MOC8206
MRD14B
MRD300
MRD3010
MOC8113
MOC8204
MOC8204
MOC8204
4-105
4-109
4-109
4-109
7-30
7-16
MOC5009
MOC601A
MOC601B
MOC602A
MOC602B
MOC603A
MOC603B
MOC5009
4N27
4N27
4N26
4N26
4N35
4N35
4-79
4-3
4-3
4-3
4-3
4-11
4-11
MRD3050
MRD3051
MRD3054
MRD3055
MRD3056
MRD310
MRD360
MRD3050
MRD3051
MRD3054
MRD3055
MRD3056
MRD310
MRD360
7-16
7-19
MOC604A
MOC604B
MOC622A
MOC623A
MOC624A
MOC625A
MOC626A
4N35
4N35
4N29
4N32
4N32
HllG2
MOC8030
4-11
4-11
4-7
4-7
4-7
4-41
4-86
MRD370
MRD500
MRD5009
MRD510
MRD701
MRD711
MRD721
MRD370
MRD500
MRD5009
MRD510
MRD901
MRD911
MRD921
7-22
7-39
7-22
7-28
7-30
7-32
MOC627A
MOC628A
MOC629A
MOC633A
MOC633B
MOC634A
MOC634B
MOC8050
MOC8050
MOC8021
MOC3020
MOC3020
MOC3021
MOC3021
4-86
4-86
4-82
4-59
4-59
4-59
4-59
MRD750
MRD821
MRDC100WP
MRDC200WP
MRDC400WP
MRDC600WP
MRDC800WP
MRD950
MRD821
MRDC100WP
MRDC200WP
MRDC400WP
MRDC600WP
MRDC800WP
7-35
7-25
10-8
10-10
10-12
10-15
MOC635A
MOC635B
MOC640A
MOC640B
MOC641A
MOC641B
MOC660B
MOC3022
MOC3022
MOC3041
MOC3041
MOC3041
MOC3041
MOC3061
4-59
4-59
4-67
4-67
4-67
4-67
4-71
MTH320
MTH321
MTH420
MTH421
MTS360
MTS361
MTS460
MOC661B
MOC662B
MOC680B
MOC681B
MOC682B
MOC70P2
MOC70Tl
MOC3061
MOC3062
MOC3081
MOC3081
MOC3082
MOC70P2
MOC70Tl
4-71
4-71
4-75
4-75
4-75
8-10
MTS461
OP130
OP131
OP160
OP160SL
OP160SLA
OP800
MOC70T2
MOC70Ul
MOC70U2
MOC70Vl
MOC70Wl
MOC71Ul
MOC75Tl
MOC70T2
MOC70Ul
MOC70U2
MOC70Vl
MOC70Wl
MOC71Ul
MOC75Tl
8-10
8-10
8-10
8-10
8-13
8-15
8-18
OP801
OP802
OP803
OP804
OP805
OP830
OPB804
MOC75T2
MOC75Ul
MOC75U2
MOC7811
MOC7812
MOC7813
MOC7821
MOC7822
MOC75T2
MOC75Ul
MOC75U2
MOC70Tl
MOC70T2
MOC70T3
MOC70Ul
MOC70U2
8-18
8-18
8-18
8-10
8-10
8-10
8-10
8-10
OPB813
OPB814
OPB815
OPB816
OPB817
OPB818
OPB826S
OPB826SD
15-5
MRD911
MRD300
MRD3010
MRD300
MRD300
MRD300
MRD300
MRD901
MRD901
MRD901
7-16
7-16
7-16
7-16
7-28
7-28
7-28
MRD901
7-28
7-11
7-11
7-2
7-2
7-2
MLED930
MLED930
MLED81
MLED81
MLED81
MRD3055
MRD3050
MRD310
MRD300
MRD300
MRD300
MRD300
MOC70Ul
H21Al
H21A2
H21A3
H21A1
H21A3
MOC70Ul
MOC70W2
MOC70Wl
7-16
7-16
7-16
7-16
7-16
8-10
8-2
8-2
8-2
8-2
8-2
8-10
8-13
8-13
Index and Cross Reference
Industry
Part Number
Motorola
Nearest
Replacement
OPB847
OPB848
OPB860
OPB871N55
OPB871T55
OPB872N55
OPB872T55
OPB877T65
OPI2150
OPI2151
OPI2152
OPI2153
OPI2154
OPI2155
4N28
4N28
4N26
TIL117
4N26
4N35
OPI2250
OPI2251
OPI2252
OPI2253
OPI2254
OPI2255
OPI2500
4N28
4N28
4N26
TIL117
4N26
4N35
Hl1AAl
OPI2501
OPI3009
OPI3010
OPI3011
OPI3012
OPI3020
OPI3021
(continued)
Motorola
Similar
Replacement
Page
Number
Motorola
Industry
Nearest
Part Number Replacement
Motorola
Similar
Replacement
MOC70Ul
MOC70Ul
MOC70Tl
H21Al
H21A2
H21A3
H22Al
8-10
8-10
8-10
8-2
8-2
8-2
8-2
SE1450-3
SE1450-4
SE2450-1
SE2450-2
SE2450-3
SE2460-1
SE2460-2
MLED930
MLED930
MLED930
MLED930
MLED930
MLED930
MLED930
7-11
7-11
7-11
7-11
7-11
7-11
7-11
H22A2
8-2
4-3
4-3
4-3
SE2460-3
SE5450-11
SE5450-12
SE5450-13
SE5450-14
SE5451-1
SE5451-2
MLED930
7-11
7-11
7-11
7-11
7-11
7-11
7-11
4-3
4-11
4-3
4-3
4-3
MLED930
MLED930
MLED930
MLED930
MLED930
MLED930
4-3
4-11
4-27
SE5451-3
SFH600-0
SFH600-1
SFH600-2
SFH601-1
SFH601-2
SFH601-3
MOC3009
MOC3010
MOC3011
MOC3012
MOC3020
MOC3021
4-27
4-55
4-55
4-55
4-55
4-59
4-59
SFH601G-l
SFH601G-2
SFH601G-3
SFH609-1
SFH609-2
SFH609-3
SG100l
CNY17-1T
CNY17-2T
CNY17-3T
OPI3022
OPI3023
OPI3030
OPI3031
OPI3032
OPI3033
OPI3040
MOC3022
MOC3023
MOC3031
MOC3031
MOC3032
MOC3033
MOC3041
4-59
4-59
4-63
4-63
4-63
4-63
4-67
SPX103
SPX103
SPX1872-1
SPX1872-2
SPX1873-1
SPX1873-2
SPX1876-1
4N35
4N35
OPI3041
OPI3042
OPI3043
OPI3150
OPI3151
OPI3152
OPI3153
MOC3041
MOC3042
MOC3043
4N33
4N33
4-67
4-67
4-67
4-7
4-7
SPX1876-2
SPX2
SPX26
SPX2762-4
SPX28
SPX2E
SPX35
OPI3250
OPI3251
OPI3252
OPI3253
OPI5000
OPI5010
OPI6000
4N33
4N33
HllA520
HllA520
MOC8204
4-109
OPI6100
OPI8015
PC503
SD1440-1
SD1440-2
SD1440-3
SD1440-4
MOC8204
MOC5009
4N26
SD3420-1
SD3420-2
SD5400-1
SD5400-2
SD5400-3
SD5420-1
SD5440-1
MRD510
MRD510
MRD370
MRD360
MRD360
MRD500
MRD3052
SD5440-2
SD5440-3
SD5440-4
SD5442-1
SD5442-2
SD5442-3
SE1450-1
SEl450-2
MRD3056
MRD300
HllAAl
MCA255
HllBl
4-34
4-7
4-7
MCA255
HllBl
CNY17-2
CNY17-3
7-22
7-22
STP53
STPT260
STPT300
STPT310
STPT80
STPT81
STPT82
MRD3056
MRD360
MRD300
STPT83
STPT84
TFH601-L
TFH601-M
TIL111
TIL112
TIL113
TILl14
MRD3054
MRD3056
7-16
7-16
7-16
7-16
7-16
7-11
7-11
15-6
4-11
4-11
8-10
8-10
8-10
8-10
8-10
MOC70U2
SPX7272
SPX7273
SSL34
SSL4
SSL4F
SSL54
STP51
7-19
7-19
7-22
MOC70Ul
MOC70Ul
MOC70Tl
MOC70Tl
MOC70Tl
4N27
4N35
4N35
4-109
4-79
4-3
4-34
CNY17-1
CNY17-2
CNY17-3
MLED930
MOC70Tl
4N35
4N35
4N35
4N35
H11A550
4N35
CNY17-1
7-11
4-19
4-19
4-19
4-19
4-19
4-19
4-19
4-19
4-19
4-19
4-19
4-19
7-11
4N35
4N27
SPX36
SPX37
SPX4
SPX5
SPX53
SPX6
SPX7271
MRD3050
MRD3050
MRD3050
MRD3050
MRD300
MRD300
MRD300
MRD300
MLED930
MLED930
MLED930
CNY17-1
CNY17-2
CNY17-3
CNY17-1
CNY17-2
CNY17-3
Page
Number
8-10
4-11
4-3
8-10
4-3
4-11
4-11
4-11
4-11
4-11
4-11
4-11
4-19
MLED930
MLED930
MLED930
MLED930
4-19
4-19
7-11
7-11
7-11
7-11
MRD360
7-19
7-16
7-19
CNY17-2
CNY17-3
4-19
4-19
4N35
4-11
MRD3050
MRD3056
MRD3052
MRD3053
TIL111
TIL112
TIL113
Index and Cross Reference
Industry
Part Number
TIL115
TIL116
TIL117
TIL11S
TIL119
TIL124
TIL125
TIL126
TIL127
TIL12S
TIL12SA
TlL153
TIL154
TIL155
Motorola
Nearest
Replacement
(continued)
Motorola
Similar
Replacement
4N35
Page
Number
4-11
Motorola
Similar
Replacement
Page
Number
4-11
4-11
TLP3020
TLP3021
TLP3022
TLP3023
TLP3031
TLP3032
TLP3033
MOC3020
MOC3021
MOC3022
MOC3023
MOC3031
MOC3032
MOC3033
4-59
4-59
4-59
4-59
4-63
4-63
4-63
4N33
MOCS111
4N32
4-7
4-105
4-7
4-11
4-11
4-11
TLP3041
TLP3042
TLP3043
TLP3061
TLP3062
TLP3063
TLP501
MOC3041
MOC3042
MOC3043
MOC3061
MOC3062
MOC3063
4N27
4-67
4-67
4-67
4-71
4-71
4-71
4-3
4N32
4N32
4N32
CNY17-1
H11AA1
MOCS060
MOCSOSO
4-7
4-7
4-7
4-19
4-27
4-90
4-94
TLP503
TLP504
TLP504
TLP535
TLP575
TLP576
TLP635
4N25
4N25
4N25
CNY17-1
MOCS080
MOCS020
CNY17-2
4-3
4-3
4-3
4-19
4-94
4-S2
4-19
MOCS020
4-S2
7-11
7-11
7-11
7-11
7-11
TLP635F
TLP636
TLP636F
TLP637
TLP637F
TLP639
TLP639F
CNY17-2T
MOCS112
MOCS112T
CNY17-3
CNY17-3T
H11AA2
H11AA2T
4-19
4-105
4-105
4-19
4-19
4-27
4-27
MOC3022
MOCSOSO
MOCSOSOT
4-59
4-67
4-67
4-71
4-71
4-94
4-94
MOCS020
MOCS020T
H11G1
H11G1T
CNY17-2
CNY17-2T
4-S2
4-S2
4-41
4-41
4-19
4-19
TIL116
TIL117
4N35
TIL119
4N35
4N35
4-11
TIL126
4N35
4N35
4N35
TIL156
TIL157
TIL157A
TIL1S1
TIL1S6
TIL1S7
TIL1S9
Motorola
Industry
Nearest
Part Number Replacement
TIL190
TIL23
TIL24
TIL31
TIL33
TIL34
TIL63
MLED930
MRD3050
TIL64
TIL65
TIL66
TIL67
TIL81
TLP153
TLP154
MRD3050
MRD3052
MRD3054
MRD3056
MRD300
4N35
4N35
7-16
4-11
4-11
TLP155
TLP3009
TLP3010
TLP3011
TLP3012
4N35
MOC3009
MOC3010
MOC3011
MOC3012
4-11
4-55
4-55
4-55
4-55
MLED930
MLED930
MLED930
MLED930
TLP665G
TLP666G
TLP666GF
TLP666J
TLP666JF
TLP675
TLP675F
TLP676
TLP676F
TLP677
TLP677F
TLP735
TLP735F
15-7
MOC3042
MOC3042T
MOC3062
MOC3062T
15-8
/
Introduction
Quality and Reliability
Selector Guide
Optoisolators/Optocouplers Data Sheets
POWER OPTO Isolators Data Sheets
SOIC-8 Small Outline Optoisolators Data Sheets
Discrete Emitters/Detectors Data Sheets
Slotted Optical Switches Data Sheets
Fiber Optics Data Sheets
Emitter/Detector Chips Data Sheets
Applications Information
Tape and Reel Specifications and
Surface Mount Package Information
Package Outline Dimensions
Appendices
Index and Cross Reference
2PHXl3907P-16 Prinlad in USA 8J93 BANTACO. MOTOll36 30,000 OPTO YBAEAA
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DL118/D
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Source Exif Data:
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