1995_Central_Semiconductor_SMD_Data_Book 1995 Central Semiconductor SMD Data Book
User Manual: 1995_Central_Semiconductor_SMD_Data_Book
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I.
Central'"
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SMD DATA BOOK
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Cent.al Semlconducto. Co....
has been in the
business of manufacturing leaded discrete semiconductors
since 1974. Surface Mounted Devices were added to our
product portfolio in 1987.
Products of our 11 SMD families are manufactured on
highly automated and efficient assembly lines using state of
the art equipment to yield high thruput levels at very low PPM.
The end result is a high quality device which is brought to
market competitively priced.
In addition to our high volume capability, inquiries for
custom SMD products are welcomed. Your unique devices can
be developed from concept to reality, and rapidly brought to
market in moderate or volume quantities.
Call Central for SMD or leaded discretes and find out
just how "CENTRAL MAKES THE DIFFERENCE."
Our leaded product families include:
Bridge Rectifiers
Chips
Current Limiting Diodes
Field Effect Transistors
Germanium Diodes
Power Transistors
Rectifiers
Silicon Diodes
Small Signal Transistors
Thyristors
Zener Diodes
. " , Printed on recycled paper using Soy Ink.
"f• . , Please recycle.
.
Selected, Special, and Custom SMOs
In addition to our standard surface mounted devices, Central Semiconductor is committed to building
Selected, Special, and Custom SMDs.
SELECTED SMD
A selected SMD is a standard device that is selected for an additional or tightened electrical
parameter(s).
For example:
CMPT2222A selected for higher voltage
The standard BV CEO is 40 volts min and the customer's application
requires 60 volts min.
CZT3019 selected for higher gain
The standard hFE is 100 min, 300 max and the customer's special selection
is 160 min, 300 max.
CMPZ5240B selected for tighter tolerance
The standard tolerance is ±5% and the customer requires ±2% tolerance.
SPECIAL SMD
A Special SMD is required when a selection of a standard device is not possible. Normally, this is
accomplished through a special diffusion of a standard process.
For example:
CMPD2003 with ultra low leakage
A special diffusion is required to yield a leakage level far below the standard IR of
100nA max.
CXT3904 with extremely high gain
A special diffusion is required to yield a minimum hFE above the standard range of
100 min, 300 max. (example: a range of 320 min, 500 max)
CllR1 U-04 with higher voltage
A special diffusion can be performed to yield a BVR of 600 volts min, instead of 400
volts min.
CUSTOM SMD
A Custom SMD may be developed for a unique customer requirement. Custom devices can be
obtained by either assembling one of our standard chips into a different case or by developing a
completely new device.
For example:
CXSH-4 is a custom device that was developed for a customer requirement. This
device is a Schottky Rectifier (normally built in a MElF or 5MB case) assembled into
an SOT-89 case to meet a very tight height restriction.
CBR1 F-D020S is a custom device. Our standard SMD Bridge Rectifier is built with
general purpose chips; this application requires fast recovery chips.
While other manufacturers shy away from Selected and Special and Custom devices, Central
is committed to meeting Customer needs for Selected and Special SMDs.
Central will review and determine feasibility of Custom devices.
QUALITY POLICY
•
Our definition of quality is Complete Customer Satisfaction
100% of the time.
•
We are dedicated to manufacturing Competitively Priced,
Quality ProdUcts delivered on time and professionally
serviced.
•
We define Excellence as surpassing our customers' expectations.
•
Our perpetual challenge is the pursuit of Achieving Excellence
in everything we do, and we strive to accomplish this by
utilizing Ongoing Training for Continuous Improvement in all areas.
•
We recognize that customer satisfaction results in Repeat Business.
Table of Contents
Page
Index I Cross Reference
6
Leaded To Surface Mount Equivalents
20
Marking Codes
24
Reliability Data
27
Selection Guide
29
Data Sheets
53
Mounting Pad Geometries
311
Mechanical Drawings
319
Engineering Specifications
327
Index/Crass ••'.rence
Industry
Part Number
Central
Part Number
Code
Selection
Guide
Data
Sheet
1N6478
1N6479
CLLR1-02
EM
46
CLLR1-02
EM
46
1N6481
CLLR1-04
EM
1N6482
CLLR1-06
1N6483
Industry
Part Number
Central
Part Number
116
BAT54S
CMPSH-3S
EM
39
156
116
BAT64
CMPSH-3
EM
39
156
46
116
BAV70
CMPD2838
EM
38
138
EM
46
116
BAV74
CMPD2838
EM
38
138
CLLR1-10
EM
46
116
BAV99
CMPD7000
EM
38
148
1N6484
CLLRHO
EM
46
116
BAV100
CLL4448
EM
38
106
1S2835
CMPD2836
EM
38
138
BAV101
CLL2003
EM
38
100
Code
Selection
Guide
Data
Sheet
1S2836
CMPD2836
EM
38
138
BAV102
CLL2003
EM
38
100
1S2837
CMPD2838
EM
38
138
BAV103
CLL2003
EM
38
100
1S2838
CMPD2838
EM
38
138
BAV105
CLL4150
EM
38
104
1SR154-100
CMR1-02
EM
46
222
BAW56
CMPD2836
EM
38
138
1SR154-200
CMR1-02
EM
46
222
BAY84
CMPD5001S
EM
38
144
1SR154-400
CMR1-04
EM
46
222
BAY85
CMPD2004
EM
38
136
31
54
BAY85S
CMPD2004S
EM
38
136
2N7002
BAR42
CMPSH-3
SE
39
156
BC807
32
BAR43
CMPSH-3
EM
39
156
BC807.16
32
BAR43A
CMPSH3A
EM
39
156
BC807.25
32
BAR43C
CMPSH-3C
EM
39
156
BC807.40
32
BAR43S
CMPSH-3S
EM
39
156
BC808
32
BAS16
CMPD 914
EM
38
132
BC808.16
32.
BAS17
CBAS17
EM
40
62
BC808.25
32
BAS19
CMPD2003
EM
38
136
BC808.40
32
BAS20
CMPD2003
EM
38
136
BC817
32
BAS21
CMPD2003
EM
38
136
BC817.16
32
38
56
BC817.25
32
BAS28
BAS29
CMPD1001
EM
38
134
BC817.40
32
BAS31
CMPD1001S
EM
38
134
BC818
32
BAS32
CLL4448
EM
38
106
BC818.16
32
BAS32L
CLL4448
EM
38
106
BC818.25
32
BAS35
CMPD1001A
EM
38
134
BC818.40
32
BAS40
CMPSH-3
SE
39
156
BC846
32
BAS40-04
CMPSH-3S
SE
39
156
BC846A
32
BAS40-05
CMPSH-3C
SE
39
156
BC846B
32
BAS40-06
CMPSH-3A
SE
39
156
BC847
32
38
58
BC847A
32
BAS56
BAS70
CMPD6263
EM
39
146
BC847B
32
BAS70-04
CMPD6263S
EM
39
146
BC847C
32
BAS70-05
CMPD6263C
EM
39
146
BC848
32
BAS70-06
CMPD6263A
EM
39
146
BC848A
32
BAT17
CMPD6263
SE
39
146
BC848B
32
BAT18
CMPD6263
EM
39
146
BC848C
32
BAT54
CMPSH-3
EM
39
156
BC849
32
BAT54A
CMPSH-3A
EM
39
156
BC849B
32
BAT54C
CMPSH-3C
EM
39
156
BC849C
32
Closest equivalent (slight to significant electrical and/or mechanical differences)
Exact electrical and mechanical.
Exact mechanical equivalent, slight electrical differences.
Exact electrical equivalent, slight mechanical differences.
Central™
Semlconducto.
CO'II.
6
Index/Crass Reference (Continued)
Industry
Part Number
Central
Part Number
Code
Selection
Guide
Industry
Part Number
Data
Sheet
Central
Part Number
Code
EM
EM
Selection
Guide
BC850
32
BCV28
CXTA64
BC850B
32
BCV29
CXTA14
BC850C
32
BCV46
33
BC856
32
BCV47
33
BC856A
32
BCV48
33
BC856B
32
BCV49
33
BC857
32
BCV71
33
BC857A
32
BCV72
33
BC857B
32
BCW29
33
BC857C
32
BCW30
33
BC858
32
BCW31
33
BC858A
32
BCW32
33
BC858B
33
BCW33
33
BC858C
33
BCW60
33
BC859
33
BCW60A
33
BC859A
33
BCW60B
33
BC859B
33
BCW60C
33
BC859C
33
BCW60D
33
BC860
33
BCW61
33
BC860A
33
BCW61A
33
BC860B
33
BCW61B
33
BC860C
33
BCW61C
33
BC868
CBCX68
BC869
CBCX69
EM
EM
35
304
35
304
35
66
BCW61D
33
35
66
BCW65
33
BCF29
33
BCW65A
33
BCF30
33
BCW65B
33
BCF32
33
BCW65C
33
BCF33
33
BCW66
33
BCF70
33
BCW66F
33
BCF81
33
BCW66G
33
36
304
BCW66H
33
36
304
BCW67
33
BCP48
BCW67A
33
BCP49
BCW67B
33
BCP28
CZTA64
BCP29
CZTA14
BCP51, -10, -16
CZT4033
BCP52, -10, -16
CZT4033
BCP53, -10, -16
CZT4033
BCP54, -10, -16
CZT3019
BCP55, -10, -16
CZT3019
BCP56, -10, -16
CZT3019
BCP68
. CBCP68
BCP69
CBCP69
EM
EM
EM
EM
EM
EM
EM
EM
EM
EM
Data
Sheet
36
296
BCW67C
33
36
296
BCW68
33
36
296
BCW68F
33
36
292
BCW68G
33
36
292
BCW68H
33
36
292
BCW69
33
36
64
BCW70
33
36
64
BCW71
33
BCV26
33
BCW72
33
BCV27
33
BCW81
33
Closest equivalent (slight to significant electrical andlor mechanical differences)
Exact electrical and mechanical.
Exact mechanical equivalent, slight electrical differences.
Exact electrical equivalent, slight mechanical differences.
7
Central™
semiconductor Co....
Index/Cross Reference
Industry
Part Number
Central
Part Number
Code
Selection
Guide
(Continued)
Data
Sheet
Industry
Part Number
Central
Part Number
CMPT5179
Code
EM
SelectIon
Guide
BCW89
33
BFS17
BCX17
33
BFS18
33
BCX18
33
BFS19
33
BCX19
33
BFS20
BCX20
33
BSR12
BCX51 , -10, -16
CXT4033
BCX52, -10, -16
CXT4033
BCX53, -10, -16
CXT4033
BCX54, -10, -16
CXT3019
BCX55, -10, -16
CXT3019
BCX56, -10, -16
CXT3019
BCX68
CBCX68
BCX69
CBCX69
EM
EM
EM
EM
EM
EM
EM
EM
31
Data
Sheet
186
33
CMPT3640
SE
30
35
266
BSR13
33
35
266
BSR14
33
35
266
BSR15
33
35
262
BSR16
33
35
262
BSR17
33
35
262
BSR17A
35
66
BSR30
CXT4033
35
66
BSR31
CXT4033
172
33
SE
SE
SE
SE
SE
SE
SE
SE
35
266
35
266
35
266
35
266
35
262
35
262
35
262
35
262
35
274
35
274
35
274
35
274
35
272
272
BCX70
33
BSR32
CXT4033
BCX70G
33
BSR33
CXT4033
BCX70H
33
BSR40
CXT3019
BCX70J
33
BSR41
CXT3019
BCX70K
33
BSR42
CXT3019
BCX71
33
BSR43
CXT3019
BCX71G
33
BSS63
BCX71H
33
BSS64
BCX71J
33
BST15
CXTA92
BCX71K
33
BST16
CXTA92
BF554
BST39
CXTA42
BF599
BST40
CXTA42
CXTA14
EM
SE
SE
EM
CE
CXTA64
CE
35
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
46
116
46
116
46
116
46
116
46
116
47
118
47
118
BF620
CXTA42
BF621
CXTA92
BF622
CXTA42
BF623
CXTA92
BF720
CZTA42
BF721
CZTA92
BF722
CZTA42
BF723
CZTA92
EM
EM
EM
EM
EM
EM
EM
EM
35
274
BST50
35
274
BST51
35
274
BST52
35
274
BST60
36
274
BST61
36
274
BST62
36
274
BSV52
36
274
BYD17D
CLLR1-02
BF822
BYD17G
CLLR1-06
BF823
BYD17J
CLLR1-06
BFN16
BYD17K
CLLR1-10
BFN17
BYD17M
CLLR1-l0
BFN18
BYD37D
CLLR1F-02
BFN19
BYD37G
CLLR1F-06
BFN22
BYD37J
CLLR1F-06
BFN23
BYD37K
CLLR1F-l0
BFN36
CZTA42
BFN37
CZTA92
BFN38
CZTA42
BFN39
CZTA92
EM
EM
EM
EM
33
36
274
BYD37M
CLLR1F-l0
36
274
BYD77A
CLLR1U-Ol
36
274
BYD77B
CLLR1U-Ol
36
274
BYD77C
CLLR1U-02
47
118
47
118
47
118
48
120
48
120
48
120
• Special Order
I I
I I
CE Closest equivalent (slight to significant electrical and/or mechanical differences)
EM Exact electrical and mechanical.
SE Exact mechanical equivalent, slight electrical differences.
SM Exact electrical equivalent, slight mechanical differences.
Central™
Semiconductor Corp.
8
Index/Crass Reference (Continued)
Industry
Part Number
Central
Part Number
Code
Selection
Guide
Data
Sheet
Industry
Part Number
BYD77D
CLLR1U-02
CE
BYD77E
CLLR1U-04
CE
BYD77F
CLLR1U-04
BYD77G
Central
Part Number
48
120
CBR1 U-D01 OS
50
70
48
120
CBR1 U-D020S
50
70
CE
48
120
CBRHD-02
50
72
CLLR1U-04
CE
48
120
CBRHD-04
50
72
BYM10- 50
CLLR1-02
EM
46
116
CBRHD-06
50
72
BYM10-100
CLLR1-02
EM
46
116
CBRHD-10
50
72"
BYM10- 200
CLLR1-02
EM
46
116
CCLHM080
45
74
BYM10- 400
CLLR1-04
EM
46
116
CCLHM100
45
74
BYM10- 600
CLLR1-06
EM
46
116
CCLHM120
45
74
BYM10- 800
CLLR1-10
EM
46
116
CCLHM150
45
74
BYM10-1000
CLLR1-10
EM
46
116
CCLM0035
44
76
BYM11- 50
CLLR1F-02
EM
47
118
CCLM0130
44
76
BYM11- 100
CLLR1F-02
EM
47
118
CCLM0300
44
76
BYM11- 200
CLLR1F-02
EM
47
118
CCLM0500
44
76
BYM11- 400
CLLR1F-06
EM
47
118
CCLM0750
44
76
BYM11- 600
CLLR1 F-06
EM
47
118
CCLM1000
44
76
BYM11- 800
CLLR1F-10
EM
47
118
CCLM1500
44
76
BYM11-1000
CLLR1F-10
EM
47
118
CCLM2000
44
76
BYM12- 50
CLLR1U-01
EM
48
120
CCLM2700
44
76
BYM12-100
CLLR1U-01
EM
48
120
CCLM3500
44
76
BYM12-150
CLLR1U-02
EM
48
120
CCLM4500
44
76
BYM12-200
CLLR1U-02
EM
48
120
CCLM5750
44
76
BYM12-300
CLLR1U-04
EM
48
120
CHT 918
34
BYM12-400
CLLR1U-04
EM
48
120
CHT2222A
34
BYM13-20
CLLSH1-20
EM
49
122
CHT2369A
34
BYM13-30
CLLSH1-40
EM
49
122
CHT2907A
34
BYM13-40
CLLSH1-40
EM
49
122
CJD
31C
37
78
BYM13-50
CLLSH1-60
EM
49
122
CJD
32C
37
78
BYM13-60
CLLSH1-60
EM
49
122
CJD
41C
37
80
BZX84C 3V3 thru
42
60
CJD
42C
37
80
BZX84C33
42
60
CJD
47
37
82
CBAS17
40
62
CJD
50
37
82
CBCP68
36
64
CJD
112
37
84
CBCP69
36
64
CJD
117
37
84
CBCX68
35
66
CJD
122
37
86
CBCX69
35
66
CJD
127
37
86
CBR1-D020S
50
68
CJD 200
37
88
CBR1-D040S
50
68
CJD 210
37
88
CBR1-D060S
50
68
CJD 340
37
90
CBR1-D100S
50
68
CJD 350
37
90
CBR1 F-D020S
50
CJD 2955
37
92
CBR1 F-D040S
50
CJD 3055
37
92
CBR1 F-D060S
50
CJD13003
37
94
CBR1 F-D1 OOS
50
CLL 457A
40
96
Code
Selection
Guide
Data
Sheet
Closest equivalent (slight to significant electrical and/or"mechanical differences)
Exact electrical and mechanical.
Exact mechanical equivalent, slight electrical differences.
Exact electrical equivalent, slight mechanical differences.
9
Central™
Samlconductor COrli.
Index/Cross Ref.r.nce
Industry
Part Number
Central
Part Number
Code
Selection
Guide
(Continued)
Data
Sheet
Industry
Part Number
Central
Part Number
Code
Selection
Guide
Data
Sheet
140
Cll459A
40
96
CMPD4150
38
Cll 914
38
98
CMPD4448
38
142
Cll2003
38
100
CMPD5001
38
144
Cll3595
40
102
CMPD5001S
38
144
Cll4150
38
104
CMPD6263
39
146
Cll4448
38
106
CMPD6263A
39
146
Cll4625
42
108
CMPD6263C
39
146
Cll4626
42
108
CMPD6263S
39
146
Cll4627
42
108
CMPD7000
38
148
Cll4689 thru
43
110
CMPF4391
32
150
Cll4714
43
110
CMPF4392
32
150
Cll4729A thru
43
112
CMPF4393
32
150
Cll4764A
43
112'
CMPF4416A
32
152
Cll5226B thru
42
114
CMPF5460
32
Cll5257B
42
114
CMPF5461
32
CllR1-02
46
116
CMPF5462
32
CllR1-04
46
116
CMPF5484
32
CllR1-06
46
116
CMPF5485
32
CllR1-10
46
116
CMPF5486
32
CllR1F-02
47
118
CMPFJ174
32
CllR1F-06
47
118
CMPFJ175
32
CllR1F-10
47
118
CMPFJ176
32
CllR1U-01
48
120
CMPFJ310
32
CLlR1U-02
48
120
CMPS5064
51
154
CllR1U-04
48
120
CMPSH-3
39
156
CllSH1-20
49
122
CMPSH-3A
39
156
CllSH1-40
49
122
CMPSH-3C
39
156
CllSH1-60
49
122
CMPSH-3S
39
156
158
CMDSH-3
39
124
CMPT 918
31
CMDZ 2V4 thru
41
126
CMPT 930
30
160
CMDZ 47
41
126
CMPT2222A
30
162
CMDZ4678 thru
41
128'
CMPT2369
30
164
CMDZ4714
41
128'
CMPT2484
30
166
CMDZ5221B thru
41
130
CMPT2907A
30
168
CMDZ5261B
41
130
CMPT3019
30
170
CMPD 914
38
132
CMPT3640
30
172
CMPD1001
38
134
CMPT3646
30
174
CMPD1001A
38
134
CMPT3904
30
176
CMPD1001S
38
134
CMPT3906
30
176
CMPD2003
38
136
CMPT4033
30
178
CMPD2004
38
136
CMPT4401
30
180
CMPD2004S
38
136
CMPT4403
30
180
CMPD2836
38
138
CMPT5086
30
182
CMPD2838
38
138
CMPT5087
30
182
CMPT5088
30
184
* Special Order
CE Closest equivalent (slight to significant electrical and/or mechanical differences)
I EM IExact electrical and mechanical.
SE Exact mechanical equivalent, slight electrical differences.
I SM
Central™
semiconductor Corp.
10
IExact electrical equivalent, slight mechanical differences.
I
I
Index/Cross .eference
Industry
Part Number
Central
Part Number
Code
Selection
Guide
(Continued)
Industry
Part Number
Data
Sheet
Central
Part Number
Code
Selection
Guide
Data
Sheet
CMPT5089
30
184
CMR3U-02
48
228
CMPT5179
31
186
CMR3U-04
48
228
CMPT5401
31
188
CMR3U-06
48
228
CMPT5551
31
190
CMSD4448
38
230
CMPT6427
31
192
CMSH1-20
49
232
CMPT6428
30
194
CMSH1-40
49
232
CMPT6429
30
194
CMSH1-60
49
232
234
CMPT6517
31
196
CMSH2-40
49
CMPT6520
31
196
CMSH3-20
49
236
CMPT8099
30
198
CMSH3-40
49
236
CMPT8599
30
198
CMSH3-60
49
236
CMPTA06
30
200
CMST2222A
34
238
CMPTA13
31
202
CMST2907A
34
240
CMPTA14
31
202
CMST3904
34
242
CMPTA27
31
204
CMST3906
34
242
CMPTA29
31
206
CQ89B
51
244
CMPTA42
31
208
CQ89BS
51
246
CMPTA44
31
210
CQ89D
51
244
CMPTA56
30
200
CQ89DS
51
246
CMPTA63
31
202
CQ89M
51
244
CMPTA64
31
202
CQ89MS
51
246
CMPTA92
31
208
CQ89N
51
244
CMPTH10
31
212
CQ89NS
51
246
CMPZ4619 thru
41
214'
CSHD3-40
49
248
CMPZ4627
41
214'
CSHD6-40C
49
250
CMPZ4683 thru
42
216'
CUD3-02
48
252
CMPZ4714
42
216'
CUD6-02C
48
254
CMPZ5221 B thru
41
218
CXSH-4
49
256
CMPZ5261B
41
218
CXT2222A
35
258
CMPZDA 3V6 thru
42
220
CXT2907A
35
260
CMPZDA33V
42
220
CXT3019
35
262
CMR1-02
46
222
CXT3904
35
264
CMR1-04
46
222
CXT3906
35
264
CMR1-06
46
222
CXT4033
35
266
CMR1-10
46
222
CXT5401
35
268
CMR1U-01
48
224
CXT5551
35
270
CMR1U-02
48
224
CXTA14
35
272
CMR1U-04
48
224
CXTA42
35
274
CMR1U-06
48
224
CXTA64
35
272
CMR3-02
46
226
CXTA92
35
274
CMR3-04
46
226
CZS5064
51
276
CMR3-06
46
226
CZSH-4
49
278
CMR3-10
46
226
CZT 31C
37
280
CMR3U-01
48
228
CZT 32C
37
280
CZT 122
37
282
Closest equivalent (slight to significant electrical andlor mechanical differences)
Exact electrical and mechanical.
Exact mechanical equivalent, slight electrical differences.
Exact electrical equivalent, slight mechanical differences.
11
-----------
Central™
Samlconducto. Co.p.
Index/Cross Reference
Industry
Part Number
Central
Part Number
(Continued)
Selection
Guide
Data
Sheet
Industry
Part Number
Central
Part Number
CZT 127
37
282
E81A
CZT 2000
36
284
ES1B
CZT2222A
36
286
ES1C
Code
Code
Selection
Guide
Data
Sheet
CMR1U-Ol
EM
48
CMR1U-Ol
EM
48
224
CMR1U-02
EM
48
224
224
CZT2907A
36
288
ES1D
CMR1U-02
EM
48
224
CZT 2955
37
290
ES2A
CMR1U-Ol
CE
48
224
CZT3019
36
292
E82B
CMR1U-01
CE
48
224
CZT 3055
37
290
ES2C
CMR1U-02
CE
48
224
CZT3904
36
294
ES2D
CMR1U-02
CE
48
224
CZT 3906
36
294
FDLL 914A
CLL4448
EM
38
106
CZT 4033
36
296
FDLL914B
CLL4448
EM
38
106
CZT 5338
37
298
FDLL 916A
CLL4448
EM
38
106
CZT 5401
36
300
FDLL 916B
CLL4448
EM
38
106
CZT 5551
36
302
FDLL4148
CLL 914
EM
38
98
CZTA14
36
304
FDLL4149
CLL4448
EM
38
106
CZTA42
36
306
FDLL4150
CLL4150
EM
38
104
CZTA44
36
308
FDLL4446
CLL4448
EM
38
106
CZTA64
36
304
FDLL4447
CLL4448
EM
38
106
CZTA92
36
306
FDLL4448
CLL4448
EM
38
106
DA204K
CMPD7000
EM
38
148
FDLL4449
CLL4448
EM
38
106
DAN202VAK
CMPD2838
EM
38
138
FDS04148
CMPD 914
EM
38
132
DAN212K
CMPD 914
EM
38
132
FD801201
CMPD 914/4448 8E
38
132
DAN217
CMPD7000
EM
38
148
FD801203
CMPD7000
8E
38
148
DAP202K
CMPD2836
EM
38
138
FD801204
CMPD2838
8E
38
138
DAP202VAK
CMPD2836
EM
38
138
FDS01205
CMPD2836
SE
38
138
DF005S
CBR 1-D0208
EM
50
68
FMMD 914
CMPD 914
EM
38
132
DF018
CBR 1-D0208
EM
50
68
FMMD6050
CMPD4448
EM
38
142
DF028
CBR 1-D0208
EM
50
68
FMMT 918
CMPT 918
EM
31
158
DF048
CBR 1-D0408
EM
50
68
FMMT2222
CMPT2222A
EM
30
162
DF068
CBR 1-D0608
EM
50
68
FMMT2222A
CMPT2222A
EM
30
162
DF088
CBR 1-D1008
EM
50
68
FMMT2369
CMPT2369
EM
30
164
DF108
CBR 1-D100S
EM
50
68
FMMT2369A
DL4004
CLLR1-04
EM
46
116
FMMT2484
CMPT2484
EM
30
166
DL4729 thru
CLL4729A thru
EM
43
112
FMMT2907
CMPT2907A
EM
30
168
DL4752A
CLL4752A
EM
43
112
FMMT2907A
CMPT2907A
EM
30
168
DL5817
CLLSH1-20
EM
49
122
FMMT3903
CMPT3904
8E
30
176
DL5818
CLLSH1-40
EM
49
122
FMMT3904
CMPT3904
EM
30
176
DL5819
CLLSHl-40
EM
49
122
FMMT3905
CMPT3906
8E
30
176
EGL41A
CLLRl U-Ol
EM
48
120
FMMT3906
CMPT3906
EM
30
176
EGL41B
CLLRl U-Ol
EM
48
120
FMMT4124
CMPT3904
8E
30
176
EGL41C
CLLR1U-02
EM
48
120
FMMT4125
CMPT3906
8E
30
176
EGL41D
CLLR1U-02
EM
48
120
FMMT5087
CMPT5087
EM
30
182
EGL41E
CLLRl U-04
EM
48
120
FMMTA05
CMPTA06
EM
30
200
EGL41F
CLLRl U-04
EM
48
120
FMMTA06
CMPTA06
EM
30
200
EGL41G
CLLR1U-04
EM
48
120
FMMTA12
CMPTA13
8E
31
202
• Special Order
l
CE Closest equivalent (slight to significant electrical andlor mechanical differences)
EM Exact electrical and mechanical.
I
SE Exact mechanical equivalent, slight electrical differences.
SM Exact electrical equivalent, slight mechanical differences.
Central™
Se...lconducto. CO....
12
Index/Cross .aference (Continued)
Industry
Part Number
Central
Part Number
Code
Selection
Guide
FMMTA13
FMMTA14
Data
Sheet
CMPTA13
EM
31
202
CMPTA14
EM
31
202
FMMTA20
CMPT3904
EM
30
176
FMMTA42
CMPTA42
EM
31
208
FMMTA43
CMPTA42
EM
31
208
FMMTA55
CMPTA56
EM
30
200
FMMTA56
CMPTA56
EM
30
200
FMMTA70
CMPT3906
EM
30
176
FMMTA92
CMPTA92
EM
31
208
FMMTA93
CMPTA92
EM
31
208
FTSO 706
CMPT2369
EM
30
164
FTSO 706A
CMPT2369
EM
30
164
FTSO 918
CMPT 918
EM
31
158
FTSO 930
CMPT2484
SE
30
166
FTSO 930A
CMPT2484
SE
30
166
FTS02218
CMPT2222A
SE
30
162
FTS02218A
CMPT2222A
SE
30
162
FTS02219
CMPT2222A
EM
30
162
FTS02219A
CMPT2222A
EM
30
162
FTS02221
CMPT2222A
SE
30
162
FTS02221A
CMPT2222A
SE
30
162
FTS02222
CMPT2222A
EM .
30
162
FTS02222A
CMPT2222A
EM
30
162
FTS02369
CMPT2369
EM
30
164
Industry
Part Number
FTS02369A
Central
Part Number
Code
Selection
Guide
Data
Sheet
FTS04123
CMPT3904
SE
30
176
FTS04124
CMPT3904
SE
30
176
FTS04125
CMPT3906
SE
30
176
FTS04126
CMPT3906
SE
30
176
FTS04208
CMPT3640
SE
30
172
FTS04209
CMPT3640
SE
30
172
FTS04258
CMPT3640
SE
30
172
FTS04274
CMPT2369
SE
30
164
FTS04275
CMPT2369
SE
30
164
FTS04400
CMPT4401
SE
30
180
FTS04401
CMPT4401
EM
30
180
FTS04402
CMPT4403
SE
30
180
FTS04403
CMPT4403
EM
30
180
FTS05086
CMPT5086
EM
30
182
FTS05087
CMPT5087
EM
30
182
FTS05088
CMPT5088
EM
30
184
FTS05089
CMPT5089
EM
30
184
FTS05400
CMPT5401
EM
31
188
FTS05401
CMPT5401
EM
31
188
FTS05550
CMPT5551
EM
31
190
FTS05551
CMPT5551
EM
31
190
FTS05769
CMPT2369
SE
30
164
FTS05770
CMPT 918
SE
31
158
FTS05771
CMPT3640
SE
30
172
FTSOA05
CMPTA06
EM
30
200
200
FTS02484
CMPT2484
EM
30
166
FTSOA06
CMPTA06
EM
30
FTS02904
CMPT2907A
SE
30
168
FTSOA12
CMPTA13
SE
31
202
FTS02904A
CMPT2907A
SE
30
168
FTSOA13
CMPTA13
EM
31
202
FTS02905
CMPT2907A
EM
30
168
FTSOA14
CMPTA14
EM
31
202
FTS02905A
CMPT2907A
EM
30
168
FTSOA20
CMPT3904
EM
30
176
FTS02906
CMPT2907A
SE
30
168
FTS0A42
CMPTA42
EM
31
208
208
FTS02906A
CMPT2907A
SE
30
168
FTS0A43
CMPTA42
EM
31
FTS02907
CMPT2907A
EM
30
168
FTSOA55
CMPTA56
EM
30
200
FTS02907A
CMPT2907A
EM
30
168
FTSOA56
CMPTA56
EM
30
200
FTS03563
CMPT 918
SE
31
158
FTSOA70
CMPT3906
EM
30
176
FTS03638
CMPT4403
SE
30
180
FTSOLOl
CMPT5551
EM
31
190
FTS03638A
CMPT4403
SE
30
180
FTSOL51
CMPT5401
EM
31
188
FTS03639
CMPT3640
EM
30
172
GF1A
CMR1-02
EM
46
222
FTS03640
CMPT3640
EM
30
172
GF1B
CMR1-02
EM
46
222
FTS03646
CMPT3646
EM
30
174
GF1D
CMR1-02
EM
46
222
FTS03903
CMPT3904
SE
30
176
GF1G
CMR1-04
EM
46
222
FTS03904
CMPT3904
EM
30
176
GF1J
CMR1-06
EM
46
222
FTS03905
CMPT3906
SE
30
176
GF1K
CMR1-l0
EM
46
222
FTS03906
CMPT3906
EM
30
176
GF1M
CMR1-l0
EM
46
222
Closest equivalent (slight to significant electrical andlor mechanical differences)
Exact electrical and mechanical.
Exact mechanical equivalent, slight electrical differences.
Exact electrical equivalent, slight mechanical differences.
13
Cent,al™
Samlconducto. Corp.
Index/Crass Reference
Industry
Part Number
Central
Part Number
Code
Selection
Guide
GL41A
GL41B
CLLR1-02
EM
CLLR1-02
EM
GL41D
CLLR1-02
GL41G
(Continued)
Data
Sheet
Industry
Part Number
Central
Part Number
46
116
MJD13003
CJD13003
EM
37
94
46
116
MLL 746A
CLL5226B
EM
42
114
EM
46
116
MLL 747A
CLL5227B
EM
42
114
CLLR1-04
EM
46
116
MLL 748A
CLL5228B
EM
42
114
GL41J
CLLR1-06
EM
46
116
MLL 749A
CLL5229B
EM
42
114
GL41K
CLLR1-10
EM
46
116
MLL 750A
CLL5230B
EM
42
114
GL41M
CLLR1-10
EM
46
116
MLL 751A
CLL5231B
EM
42
114
GLL4735A 1hru
CLL4735A thru
EM
43
112
MLL 752A
CLL5232B
EM
42
114
GLL4752A
CLL4752A
EM
43
112
MLL 753A
CLL5234B
EM
42
114
Code
Selection
Guide
Data
Sheet
LL4148
CLL914
EM
38
98
MLL 754A
CLL5235B
EM
42
114
LL4150
CLL4150
EM
38
104
MLL 755A
CLL5236B
EM
42
114
LL4448
CLL4448
EM
38
106
MLL 756A
CLL5237B
EM
42
114
MBAL99
CMPD 914
EM
38
132
MLL 757A
CLL5239B
EM
42
114
MBAS16
CMPD 914
EM
38
132
MLL 758A
CLL5240B
EM
42
114
MBAV70
CMPD2838
EM
38
138
MLL 759A
CLL5242B
EM
42
114
MBAV99
CMPD7000
EM
38
148
MLL 957B
CLL5235B
SE
42
114
MBAW56
CMPD2836
EM
38
138
MLL 958B
CLL5236B
SE
42
114
MBRL120
CLLSH1-20
EM
49
122
MLL 959B
CLL5237B
SE
42
114
MBRL130
CLLSH1-40
EM
49
122
MLL 960B
CLL5239B
SE
42
114
MBRL140
CLLSH1-40
EM
49
122
MLL961B
CLL5240B
SE
42
114
MBRS120
CMSH1-20
EM
49
232
MLL 962B
CLL5241B
SE
42
114
MBRS130
CMSH1-40
EM
49
232
MLL 963B
CLL5242B
SE
42
114
MBRS140
CMSH1-40
EM
49
232
MLL 964B
CLL5243B
SE
42
114
MBRS170
CMSH1-60
SE
49
232
MLL 965B
CLL5245B
SE
42
114
MBRS340TS
CMSH3-40
EM
49
236
MLL 966B
CLL5246B
SE
42
114
MBRS360TS
CMSH3-60
EM
49
236
MLL 967B
CLL5248B
SE
42
114
MURS320T3
CMR3U-02
EM
48
228
MLL 968B
CLL5250B
SE
42
114
MURS360T3
CMR3U-06
EM
48
228
MLL 969B
CLL5251B
SE
42
114
MJD
31C
CJD
31C
EM
37
78
MLL 970B
CLL5252B
SE
42
114
MJD
32C
CJD
32C
EM
37
78
MLL 971B
CLL5254B
SE
42
114
MJD
41C
CJD
41C
EM
37
80
MLL 972B
CLL5256B
SE
42
114
MJD
42C
CJD
42C
EM
37
80
MLL4001
CLLR1-02
EM
46
116
MJD
47
CJD
47
EM
37
82
MLL4002
CLLR1-02
EM
46
116
MJD
50
CJD
50
EM
37
82
MLL4003
CLLR1-02
EM
46
116
MJD 112
CJD 112
EM
37
84
MLL4004
CLLR1-04
EM
46
116
MJD 117
CJD 117
EM
37
84
MLL4625
CLL4625
EM
42
108
MJD 122
CJD 122
EM
37
86
MLL4626
CLL4626
EM
42
108
MJD
127
CJD 127
EM
37
86
MLL4627
CLL4627
EM
42
108
MJD 200
CJD 200
EM
37
88
MLL4689 thru
CLL4689 thru
EM
43
110
MJD 210
CJD 210
EM
37
88
MLL4714
CLL4714
EM
43
110
MJD 340
CJD 340
EM
37
90
MLL4729A thru
CLL4729A thru
EM
43
112
MJD 350
CJD 350
EM
37
90
MLL4752A
CLL4752A
EM
43
112
MJD 2955
CJD 2955
EM
37
92
MLL5226B thru
CLL5226B thru
EM
42
114
MJD 3055
CJD 3055
EM
37
92
MLL5257B
CLL5257B
EM
42
114
• Special Order
CE Closest equivalent (slight to significant electrical andior mechanical differences)
EM Exact electrical and mechanical.
SE
SM Exact electrical equivalent, slight mechanical differences.
Exact mechanical equivalent, slight electrical differences.
Central™
S_lcanductar Carp.
14
Index/Cross Reference (Continued)
Industry
Part Number
Central
Part Number
Code
Selection
Guide
Data
Sheet
Industry
Part Number
Central
Part Number
Code
Selection
Guide
Data
Sheet
MMBD 101
CMPD6263
EM
39
146
MMBT5088
CMPT5088
EM
30
184
MMBD 301
CMPSH-3
SE
39
156
MMBT5089
CMPT5089
EM
30
184
MMBD 352
CMPD6263S
SE
39
146
MMBT5401
CMPT5401
EM
31
188
MMBD 701
CMPD6263
SE
39
146
MMBT5551
CMPT5551
EM
31
190
MMBD 914
CMPD 914
EM
38
132
MMBT6427
CMPT6427
EM
31
192
MMBD2835
CMPD2836
EM
38
138
MMBT6428
CMPT6428
EM
30
194
MMBD2836
CMPD2836
EM
38
138
MMBT6429
CMPT6429
EM
30
194
MMBD2837
CMPD2838
EM
38
138
MMBT6517
CMPT6517
EM
31
196
MMBD2838
CMPD2838
EM
38
138
MMBT6520
CMPT6520
EM
31
196
MMBD6050
CMPD4448
EM
38
142
MMBT8099
CMPT8099
EM
30
198
MMBD6100
CMPD2838
EM
38
138
MMBT8599
CMPT8599
EM
30
198
MMBD7000
CMPD7000
EM
38
148
MMBTA05
CMPTA06
EM
30
200
MMBF4391
CMPF4391
EM
32
150
MMBTA06
CMPTA06
EM
30
200
MMBF4392
CMPF4392
EM
32
150
MMBTA13
CMPTA13
EM
31
202
MMBF4393
CMPF4393
EM
32
150
MMBTA14
CMPTA14
EM
31
202
MMBR2857
CMPT5179
EM
31
186
MMBTA20
CMPT3904
EM
30
176
MMBR5179
CMPT5179
EM
31
186
MMBTA27
CMPTA27
EM
31
204
MMBS5060
CMPS5064
EM
51
154
MMBTA42
CMPTA42
EM
31
208
MMBS5061
CMPS5064
EM
51
154
MMBTA43
CMPTA42
EM
31
208
MMBS5062
CMPS5064
EM
51
154
MMBTA44
CMPTA44
EM
31
210
MMBS5063
CMPS5064
EM
51
154
MMBTA56
CMPTA56
EM
30
200
MMBS5064
CMPS5064
EM
51
154
MMBTA63
CMPTA63
EM
31
202
MMBT 918
CMPT 918
EM
31
158
MMBTA64
CMPTA64
EM
31
202
MMBT2222
CMPT2222A
EM
30
162
MMBTA70
CMPT3906
EM
30
176
MMBT2222A
CMPT2222A
EM
30
162
MMBTA92
CMPTA92
EM
31
208
MMBT2369
CMPT2369
EM
30
164
MMBTA93
CMPTA92
EM
31
208
MMBT2484
CMPT2484
EM
30
166
MMBTH10
CMPTH10
EM
31
212
MMBT2907
CMPT2907A
EM
30
168
MMBZ15VD
CMPZDA15V
CE
42
220
MMBT2907A
CMPT2907A
EM
30
168
MMBZ5226thru
CMPZ5226B thru EM
41
218
MMBT3638
CMPT4403
SE
30
180
MMBZ5257
CMPZ5257B
EM
41
218
MMBT3638A
CMPT4403
SE
30
180
MMST 918
CMPT 918
EM
31
158
MMBT3640
CMPT3640
EM
30
172
MMST-A06
CMPTA06
EM
30
200
MMBT3646
CMPT3646
EM
30
174
MMST-A13
CMPTA13
EM
31
202
MMBT3903
CMPT3904
SE
30
176
MMST-A14
CMPTA14
EM
31
202
MMBT3904
CMPT3904
EM
30
176
MMST-A20
CMPT3904
EM
30
176
MMBT3906
CMPT3906
EM
30
176
MMST-A56
CMPTA56
EM
30
200
MMBT4123
CMPT3904
SE
30
176
MMST-A63
CMPTA63
EM
31
202
MMBT4124
CMPT3904
SE
30
176
MMST-A64
CMPTA64
EM
31
202
MMBT4125
CMPT3906
SE
30
176
MMST-A70
CMPT3906
EM
30
176
MMBT4126
CMPT3906
SE
30
176
MMST2222
CMPT2222A
EM
30
162
MMBT4401
CMPT4401
EM
30
180
MMST2222A
CMPT2222A
EM
30
162
MMBT4403
CMPT4403
EM
30
180
MMST2907
CMPT2907A
EM
30
168
MMBT5086
CMPT5086
EM
30
182
MMST2907A
CMPT2907A
EM
30
168
MMBT5087
CMPT5087
EM
30
182
MMST3904
CMPT3904
EM
30
176
Closest equivalent (slight to significant electrical and/or mechanical differences)
Exact electrical and mechanical.
Exact mechanical eqUivalent, slight electrical differences.
Exact electrical equivalent, slight mechanical differences.
15
Cantral™
Semiconductor COl'll.
Ind.X/C.oss ......nc.
(Continued)
Industry
Part Number
Central
Part Number
Data
Sheet
Industry
Part Number
Central
Part Number
MMST3906
MMST4124
Code
Selection
Guide
CMPT3906
EM
30
176
PMBT3640
CMPT3904
SE
30
176
PMBT3903
MMST4126
CMPT3906
SE
30
176
MMST4401
CMPT4401
EM
30
MMST4403
CMPT4403
EM
MMST5086
CMPT5086
MMST5087
MMST5088
Code
Selection
Guide
Data
Sheet
CMPT3640
EM
30
172
CMPT3904
SE
30
176
PMBT3904
CMPT3904
EM
30
176
180
PMBT3906
CMPT3906
EM
30
176
30
180
PMBT4123
CMPT3904
SE
30
176
EM
30
182
PMBT4124
CMPT3904
SE
30
176
CMPT5087
EM
30
182
PMBT4125
CMPT3906
SE
30
176
CMPT5088
EM
30
184
PMBT4126
CMPT3906
SE
30
176
MMST5089
CMPT5089
EM
30
184
PMBT4401
CMPT4401
EM
30
180
MURS105
CMR1U-01
EM
48
224
PMBT4403
CMPT4403
EM
30
180
MURS110
CMR1U-01
EM
48
224
PMBT5086
CMPT5086
EM
30
182
MURS115
CMR1U-02
EM
48
224
PMBT5087
CMPT5087
EM
30
182
MURS120
CMR1U-02
EM
48
224
PMBT5088
CMPT5088
EM
30
184
MURS130
CMR1U-04
EM
48
224
PMBT5089
CMPT5089
EM
30
184
MURS140
CMR1U-04
EM
48
224
PMBT5400
CMPT5401
EM
31
188
MXT2222
CXT2222A
EM
35
258
PMBT5401
CMPT5401
EM
31
188
MXT2222A
CXT2222A
EM
35
258
PMBT5551
CMPT5551
EM
31
190
MXT2907
CXT2907A
EM
35
260
PMBTA05
CMPTA06
EM
30
200
MXT2907A
CXT2907A
EM
35
260
PMBTA06
CMPTA06
EM
30
200
MXT3904
CXT3904
EM
35
264
PMBTA13
CMPTA13
EM
31
202
MXT3906
CXT3906
EM
35
264
PMBTA14
CMPTA14
EM
31
202
MXTA14
CXTA14
EM
35
272
PMBTA20
CMPT3904
EM
30
176
MXTA42
CXTA42
EM
35
274
PMBTA42
CMPTA42
EM
31
208
MXTA43
CXTA42
EM
35
274
PMBTA43
CMPTA42
EM
31
208
MXTA92
CXTA92
EM
35
274
PMBTA55
CMPTA56
EM
30
200
MXTA93
CXTA92
EM
35
274
PMBTA56
CMPTA56
EM
30
200
PMBD 101
CMPD6263
SE
39
146
PMBTA63
CMPTA63
EM
31
202
PMBD 352
CMPD6263S
SE
39
146
PMBTA64
CMPTA64
EM
31
202
PMBD 914
CMPD 914
EM
38
132
PMBTA70
CMPT3906
EM
30
176
PMBD2835
CMPD2836
EM
38
138
PMBTA92
CMPTA92
EM
31
208
PMBD2836
CMPD2836
EM
38
138
PMBTA93
CMPTA92
EM
31
208
PMBD2837
CMPD2838
EM
38
138
PMBZ5225B thru CMPZ5225B thru EM
41
218
PMBD2838
CMPD2838
EM
38
138
PMBZ5257B
CMPZ5257B
EM
41
218
PMBD6050
CMPD4448
EM
38
142
PMLL4148
CLL 914
EM
38
98
PMBD6100
CMPD2838
EM
38
138
PMLL4150
CLL4150
EM
38
104
PMBD7000
CMPD7000
EM
38
148
PMLL4151
CLL4448
SE
38
106
PMBF4391
CMPF4391
EM
32
150
PMLL4153
CLL4448
SE
38
106
PMBF4392
CMPF4392
EM
32
150
PMLL4446
CLL4448
EM
38
106
PMBF4393
CMPF4393
EM
32
150
PMLL4448
CLL4448
EM
38
106
PMBT2222
CMPT2222A
EM
30
162
PMLL5226 thru
CLL5226B thru
EM
42
114
PMBT2222A
CMPT2222A
EM
30
162
PMLL5257
CLL5257B
EM
42
114
PMBT2369
CMPT2369
EM
30
164
PXT2222
CXT2222A
EM
35
258
PMBT2907
CMPT2907A
EM
30
168
PXT2222A
CXT2222A
EM
35
258
PMBT2907A
CMPT2907A
EM
30
168
PXT2907
CXT2907A
EM
35
260
• Special Order
CE Closest equivalent (slight to significant electrical andlor mechanical differences)
EM Exact electrical and mechanical.
SE
SM Exact electrical equivalent, slight mechanical differences.
Exact mechanical equivalent, slight electrical differences.
Cantral™
••lIIlconductDr CDrp.
16
Index/Crass Reference
Industry
Part Number
Central
Part Number
Code
Selection
Guide
(Continued)
Data
Sheet
Industry
Part Number
Central
Part Number
Code
Selection
Guide
Data
Sheet
PXT2907A
CXT2907A
EM
35
260
RlR4004
. CllRl-04
EM
46
116
PXT3904
PXT3906
CXT3904
CXT3904
EM
EM
35
35
264
264
RlS4148
RlS4149
Cll914
Cll914
EM
EM
38
38
98
98
PXT4401
CXT2222A
SE
35
258
RlS4150
Cll4150
EM
38
104
PXT4403
CXT2907A
SE
35
260
RlS4151
Cll4448
SE
38
106
PXTA14
CXTA14
EM
35
272
RlS4152
Cll4448
SE
38
106
PXTA42
CXTA42
EM
35
274
RlS4153
PXTA64
CXTA64
EM
35
272
RlS4154
Cll4448
Cll4448
SE
EM
38
38
106
106
PXTA92
CXTA92
EM
35
274
RlS4446
Cll4448
EM
38
106
PZT2222
CZT2222A
EM
36
286
RlS4447
Cll4448
EM
38
106
PZT2222A
CZT2222A
EM
36
286
RlS4448
Cll4448
EM
38
106
PZT2907
CZT2907A
EM
36
288
RlS4449
Cll4448
EM
38
106
PZT2907A
PZT3904
CZT2907A
CZT3904
EM
288
RlS4450
RLS4454
SE
EM
104
294
Cll4150
Cll4448
38
EM
36
36
38
106
PZT3906
CZT3906
EM
36
294
RlZ5227B thru
Cll5227B thru
EM
42
114
PZTA13
CZTA14
EM
36
304
RLZ5257B
Cll5257B
EM
42
114
PZTA14
CZTA14
EM
36
304
RS2A
CMR1U-Ol
CE
48
224
PZTA42
PZTA43
CZTA42
CZTA42
EM
EM
36
306
36
306
RS2B
RS2D
CMR1U-Ol
CMR1U-02
CE
CE
48
48
224
224
PZTA63
CZTA64
EM
36
304
CE
48
224
CZTA64
EM
36
304
RS2G
RXT-A14
CMR1U-04
PZTA64
CXTA14
EM
35
272
PZTA92
CZTA92
EM
36
306
RXT-A64
CXTA64
EM
35
272
PZTA93
CZTA92
EM
EM
RXT2222A
RXT2907A
EM
CXSH-4
306
256
CXT2222A
RBll0C
36
49
CXT2907A
EM
35
35
258
260
RB400D
CMPSH-3
SE
39
156
RXT3904
CXT3904
EM
35
264
RB420D
CMPSH-3
SE
39
156
RXT3906
CXT3906
EM
35
264
RB421D
CMPSH-3
SE
39
156
S2A
CMR1-02
CE
46
222
RB425D
SE
S2B
S2D
CE
CE
222
232
CMR1-02
CMR1-02
46
EM
39
49
156
RB705D
CMPSH-3C
CMSHl-20
46
222
RD411D
CMPSH-3
SE
39
156
S2G
CMR1-04
CE
46
222
RF1A
CMR1U-Ol
EM
48
224
S2J
CMR1-06
CE
46
222
RF1B
CMR1U-Ol
EM
48
224
S2K
CMR1-l0
CE
46
222
RF1D
CMR1U-02
EM
48
224
S2M
CMR1-l0
CE
46
222
RF1G
RGl41 A
CMR1U-04
CllR1F-02
EM
48
224
EM
47
118
SGl41-20
SGl41-30
CllSHl-20
CllSHl-40
EM
EM
49
49
122
122
RGl41B
CllR1F-02
EM
47
118
SGl41-40
CllSHl-40
EM
49
122
RGl41D
CllR1F-02
EM
47
118
SGl41-50
CllSHl-60
EM
49
122
RGl41G
CllR1F-06
EM
47
118
SGl41-60
CllSHl-60
EM
49
122
RGl41J
CllR1F-06
CllR1F-l0
EM
SM4001
CllRl-02
EM
46
116
EM
47
47
118
RGl41K
118
SM4002
116
CllR1F-l0
EM
47
118
SM4003
EM
EM
46
RGl41M
CllRl-02
CllRl-02
46
116
RlR4001
CllRl-02
EM
46
116
SM4004
CllRl-04
EM
46
116
RlR4002
CllRl-02
EM
46
116
SM4005
CllRl-06
EM
46
116
RlR4003
CllRl-02
EM
46
116
SM4006
CllRl-l0
EM
46
116
Closest equivalent (slight to significant electrical andlor mechanical differences)
EM Exact electrical and mechanical.
Exact mechanical equivalent, slight electrical differences.
SM
17
Exact electrical equivalent, slight mechanical differences.
Cantral™
So...lconductor COrli.
Ind.X/C.ass ......nc.
(Continued)
Industry
Part Number
Central
Part Number
Data
Sheet
Industry
Part Number
SM4007
SM4933
Code
Selection
Guide
CLLR1-l0
EM
46
116
S0918
CMPT918
EM
31
158
CLLR1F-02
EM
47
118
SO 930
CMPT2484
SE
30
166
SM4934
CLLR1F-02
EM
47
118
S01711
CMPT2222A
SE
30
162
SM4935
CLLR1F-02
EM
47
118
S01893
CMPT2222A
SE
30
162
SM4936
CLLR1F_06
EM
47
118
S02221
CMPT2222A
SE
30
162
SM4937
CLLR1F-06
EM
47
118
S02221A
CMPT2222A
SE
30
162
5MBD 914
CMPD914
EM
38
132
S02222
CMPT2222A
EM
30
162
5MBD2835
CMPD2836
EM
38
138
S02222A
CMPT2222A
EM
30
162
5MBD2836
CMPD2836
EM
38
138
S02369
CMPT2369
EM
30
164
5MBD2837
CMPD2836
EM
38
138
S02369A
Central
Part Number
Code
Selection
Guide
Data
Sheet
5MBD2838
CMPD2838
EM
38
138
S02484
CMPT2484
EM
30
166
5MBD6050
CMPD4448
EM
38
142
S02894
CMPT3640
EM
30
172
5MBD6100
CMPD2838
EM
38
138
S02906
CMPT2907A
SE
30
168
5MBD7000
CMPD7000
EM
38
148
S02906A
CMPT2907A
SE
30
168
5MBT2222
CMPT2222A
EM
30
162
S02907
CMPT2907A
EM
30
168
5MBT2222A
CMPT2222A
EM
30
162
S02907A
CMPT2907A
EM
30
168
5MBT2907
CMPT2907A
EM
30
168
S03903
CMPT3904
SE
30
176
5MBT2907A
CMPT2907A
EM
30
168
S03904
CMPT3904
EM
30
176
5MBT3904
CMPT3904
EM
30
176
S03905
CMPT3906
SE
30
176
5MBT3906
CMPT3906
EM
30
176
S03906
CMPT3906
EM
30
176
5MBT4124
CMPT3904
SE
30
176
S04401
CMPT4401
EM
30
180
5MBT4126
CMPT3906
SE
30
176
S04403
CMPT4403
EM
30
180
5MBT4401
CMPT4401
EM
30
180
S05400
CMPT5401
EM
31
188
5MBT4403
CMPT4403
EM
30
180
S05401
CMPT5401
EM
31
188
5MBT5086
CMPT5086
EM
30
182
S05550
CMPT5551
EM
31
190
5MBT5087
CMPT5087
EM
30
182
S05551
CMPT5551
EM
31
190
5MBT5088
CMPT5088
EM
30
184
SOA05
CMPTA06
EM
30
200
5MBTA05
CMPTA06
EM
30
200
SOA06
CMPTA06
EM
30
200
5MBTA06
CMPTA06
EM
30
200
SOA55
CMPTA56
EM
30
200
5MBTA13
CMPTA13
EM
31
202
SOA56
CMPTA56
EM
30
200
5MBTA14
CMPTA14
EM
31
202
SS12
CMSHl-20
SM
49
232
5MBTA20
CMPT3904
EM
30
176
SS13
CMSHl-40
SM
49
232
5MBTA42
CMPTA42
EM
31
208
SS14
CMSHl-40
SM
49
232
5MBTA43
CMPTA42
EM
31
208
SS15
CMSHl-60
SM
49
232
5MBTA55
CMPTA56
EM
30
200
SS16
CMSHl-60
SM
49
232
5MBTA56
CMPTA56
EM
30
200
SS22
CMSHl-20
CE
49
232
5MBTA63
CMPTA63
EM
31
202
SS23
CMSHl-40
CE
49
232
5MBTA64
CMPTA64
EM
31
202
SS24
CMSHl-40
CE
49
232
5MBTA70
CMPT3904
EM
30
176
SS25
CMSHl-60
CE
49
232
5MBTA92
CMPTA92
EM
31
208
SS26
CMSHl-60
CE
49
232
5MBTA93
CMPTA92
EM
31
208
SXT2222A
CXT2222A
EM
35
258
S0517
CMPTA13
EM
31
202
SXT2907A
CXT2907A
EM
35
260
SO 642
CMPTA42
EM
31
208
SXT3904
CXT3904
EM
35
264
SO 692
CMPTA92
EM
31
208
SXT3906
CXT3906
EM
35
264
SXTA42
CXTA42
EM
35
274
• Special Order
lCE
Closest equivalent (slight to significant electrical andlor mechanical differences)
EM Exact electrical and mechanical.
ISE
Exact mechanical equivalent, slight electrical differences.
SM Exact electrical equivalent, slight mechanical differences.
Central™
••mlcanductDr CDrp.
18
Index/Cross .a.aranca
Industry
Part Number
Central
Part Number
SXTA43
CXTA42
EM
SXTA92
CXTA92
EM
SXTA93
CXTA92
TM4729A thru
TM4752A
Selection
Guide
(Continued)
Data
Sheet
Industry
Part Number
Central
Part Number
35
274
TMPT5086
CMPT5086
EM
30
35
274
TMPT5087
CMPT5087
EM
30
182
EM
35
274
TMPT5088
CMPT5088
EM
30
184
CLL4729A thru
EM
43
112
TMPT5401
CMPT5401
EM
31
188
CLL4752A
EM
43
112
TMPT5550
CMPT5551
EM
31
190
TMM5226B thru
CLL5226B thru
EM
42
114
TMPT5551
CMPT5551
EM
31
190
TMM5257B
CLL5257B
EM
42
114
TMPTA05
CMPTA06
EM
30
200
TMPD 914
CMPD 914
EM
38
132
TMPTA06
CMPTA06
EM
30
200
TMPD2835
CMPD2836
EM
38
138
TMPTA12
CMPTA13
SE
31
202
TMPD2836
CMPD2836
EM
38
138
TMPTA13
CMPTA13
EM
31
202
TMPD2837
CMPD2838
EM
38
138
TMPTA14
CMPTA14
EM
31
202
TMPD2838
CMPD2838
EM
38
138
TMPTA20
CMPT3904
EM
30
176
TMPD4148
CMPD 914
EM
38
132
TMPTA42
CMPTA42
EM
31
208
TMPD4150
CMPD4150
EM
38
140
TMPTA43
CMPTA42
EM
31
208
TMPD4448
CMPD4448
EM
38
142
TMPTA55
CMPTA56
EM
30
200
TMPD6050
CMPD4448
EM
38
142
TMPTA56
CMPTA56
EM
30
200
TMPD6100
CMPD2838
EM
38
138
TMPTA63
CMPTA63
EM
31
202
TMPD7000
CMPD7000
EM
38
148
TMPTA64
CMPTA64
EM
31
202
TMPF4391
CMPF4391
EM
32
150
TMPTA70
CMPT3906
EM
30
176
TMPF4392
CMPF4392
EM
32
150
TMPTA92
CMPTA92
EM
31
208
TMPF4393
CMPF4393
EM
32
150
TMPTA93
CMPTA92
EM
31
208
"TMPT 918
CMPT 918
EM
31
158
TMPZ5229 thru
CMPZ5229B thru EM
41
218
TMPT2221
CMPT2222A
SE
30
162
TMPZ5257
CMPZ5257B
EM
41
218
TMPT2221A
CMPT2222A
SE
30
162
ZC2800E
CMPD6263
SE
39
146
TMPT2222
CMPT2222A
EM
30
162
ZC2810E
CMPD6263
SE
39
146
TMPT2222A
CMPT2222A
EM
30
162
ZC2811E
CMPD6263
SE
39
146
TMPT2484
CMPT2484
EM
30
166
ZC5800E
CMPD6263
SE
39
146
TMPT2906
CMPT2907A
SE
30
168
TMPT2906A
CMPT2907A
SE
30
168
TMPT2907
CMPT2907A
EM
30
168
TMPT2907A
CMPT2907A
EM
30
168
TMPT3638
CMPT4403
SE
30
180
TMPT3638A
CMPT4403
SE
30
180
TMPT3798
CMPT5086
SE
30
182
TMPT3903
CMPT3904
SE
30
176
TMPT3904
CMPT3904
EM
30
176
TMPT3905
CMPT3906
SE
30
176
TMPT3906
CMPT3906
EM
30
176
TMPT4124
CMPT3904
SE
30
176
TMPT4125
CMPT3906
SE
30
176
TMPT4126
CMPT3906
SE
30
176
TMPT4401
CMPT4401
EM
30
180
TMPT4402
CMPT4403
SE
30
180
TMPT4403
CMPT4403
EM
30
180
Code
Code
Selection
Guide
Data
Sheet
182
Closest equivalent (slight to significant electrical and/or mechanical differences)
Exact electrical and mechanical,
Exact mechanical equivalent, slight electrical differences.
Exact electrical equivalent, slight mechanical differences.
19
Cantral™
Semiconductor Carll.
Leaded to Surface Mount _qulvalent.
LEADED
SMD
CASE
COMMENTS
1N 914
CMPD 914
Cll914
CMPD2836
CMPD2838
CMPD7000
BAS28
SOT-23
SOD-80
SOT-23
SOT-23
SOT-23
SOT-143
Single Switching Diode
leadless Switching Diode
Dual, Common Anode
Dual, Common Cathode
Dual, In Series
Dual, Isolated
1N 914B
CMPD4448
Cll4448
SOT-23
SOD-80
1N3600
CMPD4150
Cll4150
BAS56
SOT-23 Single Switching Diode
SOD-80 leadless Switching Diode
SOT-143 Dual High Current Diode, Isolated
1N4001
CllR1-02
CMR1-02
MElF
5MB
1N4002
CllR1-02
CMR1-02
MElF
5MB
1N4003
CllR1-02
CMR1-02
MElF
5MB
1N4004
CllR1-04
CMR1-04
MElF
5MB
1N4005
CllR1-06
CMR1-06
MElF
5MB
1N4006
CllR1-10
CMR1-10
MElF
5MB
1N4007
CllR1-10
CMR1-10
MElF
5MB
1N4148
CMPD 914
Cll914
CMPD2836
CMPD2838
CMPD7000
BAS28
SOT-23
SOD-80
SOT-23
SOT-23
SOT-23
SOT-143
1N4150
CMPD4150
Cll4150
BAS56
SOT-23 Single Switching Diode
SOD-80 leadless Switching Diode
SOT-143 Dual High Current Diode, Isolated
1N4448
CMPD4448
Cll4448
CMPD2836
CMPD2838
CMPD7000
SOT-23
SOD-80
SOT-23
SOT-23
SOT-23
1N4933
CllR1 F-02
CMR1U-01
MElF
5MB
Central™
Single Switching Diode
leadless Switching Diode
Dual, Common Anode
Dual, Common Cathode
Dual, In Series
Dual, Isolated
Single Switching Diode
leadless Switching Diode
Dual, Common Anode
Dual, Common Cathode
Dual, In Series
20
.omlconductor Corp.
---~
---
-
--
Leaded to Surface Mount Ellulvalents (Continued)
LEADED
SMD
CASE
1N4934
CLLR1F-02
CMR1U-01
MELF
5MB
1N4935
CLLR1 F-02
CMR1U-02
MELF
5MB
1N4936
CLLR1F-06
CMR1 U-04
MELF
5MB
1N4937
CLLR1 F-06
CMR1U-06
MELF
5MB
1N5817
CLLSH1-20
CMSH1-20
MELF
5MB
1N5818
CLLSH1-40
CMSH1-40
MELF
5MB
1N5819
CLLSH1-40
CMSH1-40
MELF
5MB
1N6263
CMPD6263
CMPD6263A
CMPD6263C
CMPD6263S
SOT-23
SOT-23
SOT-23
SOT-23
2N 918
CMPT 918
SOT-23
2N2222A
CMPT2222A SOT-23
SOT-89
CXT2222A
CZT2222A
SOT-223
2N2369
CMPT2369
SOT-23
2N2484
CMPT2484
SOT-23
2N2907A
CMPT2907A SOT-23
CXT2907A
SOT-89
CZT2907A
SOT-223
2N3019
CXT3019
CZT3019
SOT-89
SOT-223
2N3904
CMPT3904
CXT3904
CZT3904
SOT-23
SOT-89
SOT-223
2N3906
CMPT3906
CXT3906
CZT3906
SOT-23
SOT-89
SOT-223
2N4033
CXT4033
CZT4033
SOT-89
SOT-223
21
COMMENTS
Single Configuration
Dual, Common Anode
Dual, Common Cathode
Dual, In Series
Central™
S• •lconductor Corll_
Leaded to Surface Mount Equivalents (Continued)
LEADED
SMD
CASE
2N4391
CMPF4391
SOT-23
2N4392
CMPF4392
SOT-23
2N4393
CMPF4393
SOT-23
2N4401
CMPT4401
SOT-23
2N4403
CMPT4403
SOT-23
2N4416A
CMPF4416A SOT-23
2N5060 thru
2N5064
CMPS5064
SOT-23
2N5086
CMPT5086
SOT-23
2N5087
CMPT5087
SOT-23
2N5088
CMPT5088
SOT-23
2N5089
CMPT5089
SOT-23
2N5179
CMPT5179
SOT-23
2N5401
CMPT5401
CXT5401
CZT5401
SOT-23
SOT-89
SOT-223
2N5460
CMPF5460
SOT-23
Special order, consult factory
2N5461
CMPF5461
SOT-23
Special order, consult factory
2N5462
CMPF5462
SOT-23
Special order, consult factory
2N5485
CMPF5485
SOT-23
2N5551
CMPT5551
CXT5551
CZT5551
SOT-23
SOT-89
SOT-223
2N6427
CMPT6427
SOT-23
2N6428
CMPT6428
SOT-23
2N6429
CMPT6429
SOT-23
2N6517
CMPT6517
SOT-23
2N6520
CMPT6520
SOT-23
CDSH-4
CMPSH-3
CMPSH-3A
CMPSH-3C
SOT-23
SOT-23
SOT-23
Central™
Samlconductor Corll_
22
COMMENTS
Single Configuration
Dual, Common Anode
Dual, Common Cathode
Leaded to Surface Mount Equivalents (Continued)
LEADED
SMD
CASE
CDSH-4
CMPSH-3S
SOT-23
CSSD2003
CLL2003
CMPD2003
SOD-80
SOT-23
MPS650
CBCP68
CBCX68
SOT-223
SOT-89
MPS750
CBCP69
CBCX69
SOT-223
SOT-89
MPS8099
CMPT8099
SOT-23
MPS8599
CMPT8599
SOT-23
MPSA06
CMPTA06
SOT-23
MPSA13
CMPTA13
SOT-23
MPSA14
CMPTA14
CXTA14
CZTA14
SOT-23
SOT-89
SOT-223
MPSA27
CMPTA27
SOT-23
MPSA42
CMPTA42
CXTA42
CZTA42
SOT-23
SOT-89
SOT-223
MPSA44
CMPTA44
CZTA44
SOT-23
SOT-223
MPSA56
CMPTA56
SOT-23
MPSA63
CMPTA63
SOT-23
MPSA64
CMPTA64
CXTA64
CZTA64
SOT-23
SOT-89
SOT-223
MPSA92
CMPTA92
CXTA92
CZTA92
SOT-23
SOT-89
SOT-223
MPSH10
CMPTH10
SOT-23
PN3640
CMPT3640
SOT-23
PN3646
CMPT3646
SOT-23
23
COMMENTS
Dual, In Series
Central
T
Semiconductor Corp.
"
Marking Codas
Marking Code
020
Part Number
Marking Code
Part Number
Marking Code
Part Number
CMP85064
5G
BC808.40
91E
CMPZ4706
1A
BC846A
6A
BC817.16
91F
CMPZ4707
1B
BC846B
6B
BC817.25
91G
CMPZ4708
1E
BC847A
6B
CMPF5484
91H
CMPZ4709
1F
BC847B
6B1
CMPF5485
91J
CMPZ4710
1FF
CMPT5551
6BG
CMPF4416A
91K
CMPZ4711
1G
BC847C
6C
BC817.40
91L
CMPZ4712
1J
BC848A
6E
BC818.16
91M
CMPZ4713
1K
BC848B
6E
CMPF5460
91N
CMPZ4714
1L
BC848C
6E1
CMPF5461
A61
BA828
18A
CMPZ5221B
6E2
CMPF5462
A82
CMP02003
18B
CMPZ5222B
6F
BC818.25
A91
CBA817
18C
CMPZ5223B
6G
BC818.40
AA
BCW60A
180
CMPD4448
CMPZ5224B
6G
CMPF4393
AAO
18E
CMPZ5225B
6H
CMPF5486
AB
BCW60B
2B
BC849B
6J
CMPF4391
AB
CM08H-3
2C
BC849C
6K
CMPF4392
ABA
CMPD4150
2F
BC850B
68
CMPFJ176
AC
BCW60C
2G
BC850C
6T
CMPFJ310
AD
BCW60D
3A
BC856A
6W
CMPFJ175
AG
BCX70G
3B
BC856B
6X
CMPFJ174
AH
BCX70H
3E
BC857A
702
2N7002
AJ
BCX70J
3F
BC857B
81A
CMPZ5250B
AK
BCX70K
3G
BC857C
81B
CMPZ5251B
B2
B8V52
3J
BC858A
81C
CMPZ5252B
BA
BCW61A
3K
BC858B
810
CMPZ5253B
BB
BCW618
3L
BC858C
81E
CMPZ5254B
BC
BCW61C
4A
BC859A
81F
CMPZ5255B
BD
BCW610
4B
BC859B
81G
CMPZ5256B
BG
BCX71G
4C
BC859C
81H
CMPZ5257B
BH
BCX71H
4E
BC860A
81J
CMPZ5258B
BJ
BCX71J
4F
BC860B
81K
CMPZ5259B
BK
BCX71K
4G
BC860C
81L
CMPZ5260B
CO2
CMR1-02
5A
BC807.16
81M
CMPZ5261B
C 04
CMR1-04
5B
BC807.25
91A
CMPZ4702
C06
CMR1-06
5C
BC807.40
91B
CMPZ4703
C1
BCW29
5E
BC808.16
91C
CMPZ4704
C1A
CMPT3904
5F
BC808.25
910
CMPZ4705
ClO
CMPTA42
Central™
semiconductor Corp.
24
Marlclnll Cod••
Marking Code
C1G
Part Number
CMPTA06
(Continued)
Marking Code
Part Number
Marking Code
Part Number
C6H
CMPZ4621
C9K
CMPZ4687
C 1J
CMPT2369
C 6J
CMPZ4622
C 9L
CMPZ4688
C1K
CMPT6428
C6K
CMPZ4623
C9M
CMPZ4689
C1L
CMPT6429
C 6L
CMPZ4624
C9N
CMPZ4690
C1M
CMPTA13
C6M
CMPZ4625
C 9P
CMPZ4691
C1N
CMPTA14
C6N
CMPZ4626
C9Q
CMPZ4692
C1P
CMPT2222A
C6P
CMPZ4627
C9R
CMPZ4693
C1Q
CMPT5088
C7
BCF29
C 9S
CMPZ4694
C1R
CMPT5089
C7H
CMPT5179
C 9T
CMPZ4695
C1U
CMPT2484
C8
BCF30
C9U
CMPZ4696
C1V
CMPT6427
C8A
CMPZ5226B
C9V
CMPZ4697
C1X
CMPT 930
C8B
CMPZ5227B
C9W
CMPZ4698
C1Z
CMPT6517
C8C
CMPZ5228B
C9X
CMPZ4699
C2
BCW30
C8D
CMPZ5229B
C9Y
CMPZ4700
C2A
CMPT3906
C 8E
CMPZ5230B
C9Z
CMPZ4701
C2D
CMPTA92
C 8F
CMPZ5231B
C10
CMR1-10
CMPZ5232B
C 2F
CMPT2907A
C8G
C29
CMPTA29
C2G
CMPTA56
C8H
CMPZ5233B
C302
CMR3-02
C 2J
CMPT3640
C 8J
CMPZ5234B
C304
CMR3-04
C2L
CMPT5401
C8K
CMPZ5235B
C306
CMR3-06
C2P
CMPT5086
C 8L
CMPZ5236B
C310
CMR3-10
C2Q
CMPT5087
C8M
CMPZ5237B
CA2
CMPD2836
C2R
CMPT3646
C8N
CMPZ5238B
CA6
CMPD2838
C2T
CMPT4403
C8P
CMPZ5239B
CH1J
CHT2369A
C2U
CMPTA63
C8Q
CMPZ5240B
CH1P
CHT2222A
C2V
CMPTA64
C8R
CMPZ5241B
CH2F
CHT2907A
C2W
CMPT8599
C8S
CMPZ5242B
CH3B
CHT 918
C2X
CMPT4401
C8T
CMPZ5243B
CKB
CMPT8099
C2Z
CMPT6520
C8U
CMPZ5244B
CS 20
CMSH1-20
C3A
CMPT3019
C8V
CMPZ5245B
CS 40
CMSH1-40
C3B
CMPT 918
C8W
CMPZ5246B
CS60
CMSH1-60
C3E
CMPTH10
C8X
CMPZ5247B
CS240
CMSH2-40
C3Z
CMPTA44
C8Y
CMPZ5248B
CS320
CMSH3-20
C4A
CMPT4033
C8Z
CMPZ5249B
CS340
CMSH3-40
C5C
CMPD7000
C9F
CMPZ4683
CS360
CMSH3-60
C5D
CMPD 914
C9G
CMPZ4684
CU01
CMR1U-01
C6F
CMPZ4619
C9H
CMPZ4685
CU02
CMR1U-02
C6G
CMPZ4620
C 9J
CMPZ4686
CU04
CMR1U-04
25
Central™
Semiconductor Corp.
"-------"--
Marking Codes
(Continued)
Marking Code
Part Number
CU06
CMR1 U-06
FG
CMPTA27
Y4
BZX84C15
CU301
CMR3U-01
H1
BCW69
Y5
BZX84C16
BCW70
Marking Code
Part Number
Marking Code
Part Number
CU302
CMR3U-02
H2
Y6
BZX84C18
CU304
CMR3U-04
H3
BCW89
Y7
BZX84C20
CU306
CMR3U-06
H7
BCF70
Y8
BZX84C22
D1
BCW31
K1
BCW71
Y9
BZX84C24
D2
BCW32
K2
BCW72
Y10
BZX84C27
D3
BCW33
K3
BCW81
Y11
BZX84C30
D7
BCF32
K7
BCV71
Y12
BZX84C33
D8
BCF33
K8
BCV72
YY1
CMPZDA11V
D49
CMPD5001S
K9
BCF81
YY2
CMPZDA12V
D53
CMPD2004
L20
CMPD1001
YY3
CMPZDA13V
D76
CMPD6263
L21
CMPD1001S
YY4
CMPZDA15V
D95
CMPSH-3
L22
CMPD1001A
YY5
CMPZDA16V
D96
CMPD6263S
L51
BAS56
YY6
CMPZDA18V
D97
CMPD6263C
T1
BCX17
YY7
CMPZDA20V
D98
CMPD6263A
T2
BCX18
YY8
CMPZDA22A
DA
BCW67A
T7
BSR15
YY9
CMPZDA24V
DA2
CMPD5001
T8
BSR16
Z1
BZX84C4V7
DA5
CMPSH-3S
U1
BCX19
Z2
BZX84C5V1
DB
BCW67B
U2
BCX20
Z3
BZX84C5V6
DB1
CMPSH-3A
U7
BSR13
Z4
BZX84C6V2
DB2
CMPSH-3C
U8
BSR14
Z5
BZX84C6V8
DB6
CMPD2004S
U9
BSR17
Z6
BZX84C7V5
DC
BCW67C
U92
BSR17A
Z7
BZX84C8V2
DF
BCW68F
W6
BZX84C3V3
Z8
BZX84C9V1
DG
BCW68G
W7
BZX84C3V6
Z9
BZX84C10
DH
BCW68H
W8
BZX84C3V9
ZZ1
CMPZDA4V7
EA
BCW65A
W9
BZX84C4V3
ZZ2
CMPZDA5V1
EB
BCW65B
W10
CMPZDA27V
ZZ3
CMPZDA5V6
EC
BCW65C
W11
CMPZDA30V
ZZ4
CMPZDA6V2
EF
BCW66F
W12
CMPZDA33V
ZZ5
CMPZDA6V8
EG
BCW66G
WW7
CMPZDA3V6
ZZ6
CMPZDA7V5
EH
BCW66H
WW8
CMPZDA3V9
ZZ7
CMPZDA8V2
FD
BCV26
WW9
CMPZDA4V3
ZZ8
CMPZDA9V1
FE
BCV46
Y1
BZX84C11
ZZ9
CMPZDA10V
FF
BCV27
Y2
BZX84C12
FG
BCV47
Y3
BZX84C13
Central™
Semiconductor Corp.
26
Power dissipation of a surface mounted discrete semiconductor is
dependent on many factors among which are, substrate materiall
thickness, bonding pad surface area/thickness, and proximity of
the device to other components. The most critical of these is
substrate material. Due to these variables, power dissipation
is listed below as a range.
CASE
SOT-23
SOT-143
SOT-S9
SOT-223
SOD-SO
MELF
5MB
DPAK
POWER DISSIPATION RANGE
200mW - 400mW
200mW - 400mW
400mW - 1600mW
1OOOmW - 2000mW
350mW - 600mW
900mW - 1200mW
1OOOmW - 2000mW
12.5W - 20W
The low end of the power dissipation range relates to device dissipation in 'free
air @ T A= 25D C." The upper end of the range relates to optimum dissipation levels
which are attainable when the SMD is mounted on an alumina (ceramic) substrate.
Midrange dissipation levels are for traditional glass-epoxy PC boards (FR-4
material).
It is important that the design engineer consider all the factors influencing power
dissipation for each application.
TVllical Reliallilitv Data. SDT-21 Transistar
!iffl~tti"
SAMPLE
TEST CONDITION
SIZE
UNIT
HOURS
NO.
FAILURES
FAILURE RATE (1)
(%11 000 HRS)
OPERATING LIFE
(LOAD LIFE)
T A=25 0 C, P=PD MAX
VCB=80% VCB MAX
1=1000 hours
1160
1.16xl06
1
0.18
HIGH TEMPERATURE
STORAGE LIFE
TA=150oC
1=1000 hours
1160
1.16xl06
0
0.08
HIGH TEMPERATURE
REVERSE BIAS LIFE
TA=125 0 C
VCB=80% VCB MAX
1=1000 hours
1160
1.16xl06
2
0.27
HUMIDITY LIFE
(MOISTURE RESISTANCE)
T A=85 0 C, R.H.=85%
MIL-STD 202, Melhod 103B
1=1000 hours, Condilion B
1160
1.16xl06
2
0.27
TEMPERATURE CYCLING
(THERMAL SHOCK)
TL=-55 0 C, TH=150oC
IL=IH=30 min
ITRANSFER=2 min. max @ T A=25 0 C
5 cycles
1160
--
I
--
PRESSURE COOKER
(MOISTURE RESISTANCE)
TA=122 oC, P=2 almos.
6 hours per cycle
5 cycles (30 hours. lolal)
1160
--
2
--
SOLDERING HEAT
(THERMAL SHOCK)
T A=260 o±50C, 60Sn/40Pb
lolal immersio~ 2
I'MMERSION=10 - 0 sec
360
--
2
--
(1) 60% CONFIDENCE LEVEL
27
Central™
Semiconductor Corp.
TVlllcal Rallalillity Data
(Continued)
SOT-.:S Silicon Diode
OPERATING LIFE
(LOAD LIFE)
TA=2SoC, 10=80% 10 Rated
VR=80% VR Rated
t=1000 hours
60
6x104
HIGH TEMPERATURE
STORAGE LIFE
TA=1S0 oC
t=1000 hours
60
6x104
3,4
HIGH TEMPERATURE
REVERSE BIAS LIFE
TA=12S oC
VR=80% VR Rated
t=1ooo hours
60
6x104
3.4
HUMIDITY LIFE
(MOISTURE RESISTANCE)
T A=8SoC, R.H.=8S%
MIL-STD 202, Method 103B
t=10oo hours, Condition B
60
6x104
TEMPERATURE CYCLING
(THERMAL SHOCK)
TL=-SSoC, TW1S0oC
tL=tH=30 min
tTRANSFER=2 min max @ T A=2S oC
S cycles
60
0
PRESSURE COOKER
(MOISTURE RESISTANCE)
TA=122 oC, P=2 atmos.
6 hours per cycle
S cycles (30 hours total)
60
0
SOLDERING HEAT
(THERMAL SHOCK)
T A=2600 ±SOC, 60Sn/40Pb
total immersion
tIMMERSION=10::§sec
360
2
0
0
1,S
1.S
(1) 60% CONFIDENCE LEVEL
SOT-.:S Zener Diode
OPERATING LIFE
TA=2S oC, P=PD MAX
t=1000 hours
60
6x104
0
1.S
HIGH TEMPERATURE
STORAGE LIFE
TA=1S0oC
t=1000 hours
60
6x104
0
l.S
HUMIDITY LIFE
(MOISTURE RESISTANCE)
TA=8SoC, R.H.=8S%
MIL-STD 202, Method 103B
t=1000 hours, Condition B
60
6x104
TEMPERATURE CYCLING
(THERMAL SHOCK)
T L=-SSoC, T H=1S0oC
lL=tw30min
tTRANSFER=2 min max @ T A=2S 0 C
S cycles
60
0
PRESSURE COOKER
(MOISTURE RESISTANCE)
TA=122oC, P=2 atmos.
6 hours per cycle
S cycles (30 hours total)
60
0
SOLDERING HEAT
(THERMAL SHOCK)
TA=260o±SoC, 60Sn/40Pb
total immersion
tIMMERSION=10:5sec
360
2
(1) 60% CONFIDENCE LEVEL
Central™
Semlconducto. Co....
28
3.4
Selection Guide
Page
Small Signal Transistors
30
Small Signal MOSFETs
31
Junction FETs
32
Power Transistors
37
Switching Diodes
38
Schottky Diodes
39
Low Leakage Diodes
40
Stabistor Diodes
40
Zener Diodes
41
Current Limiting Diodes
44
Rectifiers
46
Bridge Rectifiers
50
SCRs
51
Triacs
51
29
Small Signal Transistors u.s.
Specification (Preferred Series)
SOT-23 Case, 350mW
General Purpose Amplifier/Switches
Devices are listed in order of descending breakdown voltage.
NPN
CMPT8099
80
80
6.0
100
80
100
300
5.0
1.0
0.4
100
6.0
CMPT930
45
45
5.0
10
45
100
300
5.0
0.01
1.0
10
8.0
150
30
3.0
CMPT2222A
75
40
6.0
10
60
100
300
10
150
1.0
500
8.0
300
4.0
285
CMPT3904
60
40
6.0
50'
30
100
300
1.0
10
0.3
50
4.0
300
5.0
250
CMPT4401
60
40
6.0
100'
35
100
300
1.0
150
0.75
500
6.5
200
80
80
5.0
100
80
100
300
5.0
1.0
0.4
100
4.5
150
60
60
5.0
10
50
100
300
10
150
1.6
500
8.0
200
CMPT3906
40
40
5.0
50'
30
100
300
1.0
10
0.4
50
4.5
250
CMPT4403
40
40
5.0
100'
35
100
300
2.0
150
0.75
500
8.5
200
0.5
50
3.5 I 300 I
255
PNP
CMPT8599
MPT2907A
Saturated Switches
100
4.0
300
255
Devices are listed in order of descending fT'
NPN
PNP
ICMPT3640 I
12
12
4.0
Low Noise Amplifiers
10'
6.0
30
120
0.3
10
60
Devices are listed in order of ascending NF.
NPN
5.0
0.1
0.5
10
4.0
5.0
1.0
0.35
1.0
6.0
900
5.0
0.1
0.5
10
250
650
5.0
0.1
0.6
500
1,250
5.0
0.1
0.6
CMPT5089
30
25
4.5
50
15
400
CMPT2484
60
60
6.0
10
45
250
CMPT5088
35
30
4.5
50
20
300
CMPT6428
60
50
6.0
10
30
CMPT6429
55
45
6.0
10
30
1,200
PNP
PNP
Central™
..... Iconducto. Co....
30
50
2.0
4.0
50
3.0
100
3.0
100
100
3.0
100
3.0
Small Sianal nanslstors u.s.
Specification (Preferred Series)
SOT-23 Case, 350mW (Continued)
High Voltage
Devices are listed in order of descending breakdown voltage.
NPN
CMPTA44
450
400
6.0
100
400
30
200
10
10
0.75
50
7.0
CMPT6517
350
350
5.0
50
250
30
200
10
30
1.0
50
6.0
40
CMPTA42
300
300
6.0
100
200
40
10
30
0.5
20
3.0
50
CMPT5551
180
160
6.0
50
120
80
250
5.0
10
0.2
50
6.0
100
CMPT6520
350
350
5.0
50
250
30·
200
40
CMPTA92
300
300
5.0
250
200
25
CMPT5401
160
150
5.0
50
120
60
20
8.0
PNP
RF Oscillator
240
10
30
1.0
50
6.0
10
30
0.5
20
6.0
50
5.0
10
0.5
50
6.0
100
8.0
4.5
Devices are listed in order of descending fT-
NPN
CMPT5179
20
12
2.5
20
15
25
1.0
3.0
0.4
10
1.0
900
CMPTH10
30
25
3.0
100
25
60
10
4.0
0.5
4.0
0.7
650
CMPT918
30
15
3.0
10
15
20
1.0
3.0
0.4
10
1.7
600
Darlington
250
6.0
Devices are listed in order of descending hFE.
NPN
PNP
Shaded areas indicate Darlington.
Small Sianal MOSFET
SOT-23 Case
31
Cantral™
Semiconductor Corp.
Junction FETs
SOT-23 Case
Amplifiers N Channel
CMPF4416A
35
5.0
15
2.5
6.0
2.0
CMPF5484'
25
1.0
5.0
0.3
3.0
3.0
2.0
CMPF5485
25
4.0
10
0.5
4.0
CMPF5486'
25
8.0
20
2.0
6.0
2.0
CMPFJ310'
25
24
60
2.0
65
1.5**
~ Transistors SOT-23 Case Proelectron Series
TYPE NO.
BCS07
BCS07.16
BCB07.25
BCB07.40
BCBrni
BCBrni.16
BC60B 25
BCSOB.40
BCB17
BCS1716
BCB17.25
BCB17.40
BCB1B
BCB1B.16
BCB1S.25
BCS1S.40
BC846
BC846A
BC846B
BC847
BC847A
BC847B
BC847C
BC84S
BC846A
BC84aB
SC84SC
BC849
BC849B
BC849C
BCS50
SCS50B
BCS50C
BC856
BC856A
BC856B
BCS57
SCS57A
BCS57B
BCS57C
BCS56
BCS58A
DESCRIPT10N
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP lOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
Central™
Semiconductor Carll.
BVcso
BV CEO
BVE10
leBo@VCB
(VOlTS)
MIN
(VOlTS)
MIN
(VOlTS)
MIN
InA)
MAX
IVOlTS)
50'
50'
50'
50'
45
45
45
45
25
25
25
25
45
45
45
45
25
25
25
25
65
65
65
45
45
45
45
5.0
5.0
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
6.0
6.0
6.0
6.0
6.0
6.0
60
5.0
5.0
5.0
5.0
5.0
5.0
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
15
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
30'
30'
30'
30'
50'
50'
50'
50'
30'
30'
30'
30'
80
80
80
50
50
50
50
30
30
30
30
30
30
30
30
30
30
50
50
50
60
50
50
50
65
65
65
45
SO
SO
50
50
50
50
30
30
30
30
30
30
45
45
45
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
MIN
MAX
100
100
160
250
100
100
160
250
100
100
160
250
100
100
160
250
110
110
200
110
110
200
420
110
110
200
420
200
200
420
200
200
420
75
125
220
75
125
220
420
75
125
600
32
@I,
(VOlTS) ImA)
V"ISAT)@I,
IVDLTS)
ImA)
MAX
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.70
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.60
0.65
0.65
0.65
0.65
0.65
0.65
0.65
0.65
0.65
@VeE
h"
250
400
600
600
250
400
600
600
250
400
600
600
250
400
600
450
220
450
BOO
220
450
SOO
SOO
220
450
800
600
450
800
800
450
800
800
250
475
800
250
475
800
800
250
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
2.0
2.0
20
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
350mW
NF
C"
to"
(pF) (MHz) IdB) Ins)
MAX TVP
MAX MAX
"
S.O
S.O
B.O
B.O
B.O
S.O
B.O
B.O
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4,5
4.5
100
100
100
100
100
100
100
100
200
200
200
200
200
200
200
200
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
150
150
150
150
150
150
150
150
150
-
-
-
-
110
10
10
10
10
10
10
10
10
10
10
4.0
4.0
4.0
3.0
3.0
3.0
10
10
10
10
10
10
10
10
10
-
-
-
MARKING
CDDE
SA
5B
5C
5E
SF
5G
6A
6B
6C
6E
6f
-
IE
IF
lG
I-
lJ
lK
lL
-
-
-
-
-
6G
lA
lB
2B
2C
2F
2G
3A
3B
3E
3F
3G
3J
SIMIlAR
LEADED
DEVICE
BC327
BC327.16
BC327.25
BC327.4O
BC32S
BC32B.16
BC32B.25
BC32B.40
BC337
BC337.16
BC337.25
BC337.4O
BC33B
BC338.16
BC33S.25
BC33S.40
BC546
BC546A
BC546B
BC547
BC547A
BC547B
BC547C
SC54S
BC548A
BC54SB
BC54SC
BC549
BC549B
BC549C
SC550
BC550B
SC550C
BC556
BC556A
BC556B
BC557
BC557A
BC557B
BC557C
BC556
SC558A
SMD Transistors 80T-23 Case 350mW
Proelectron Series-Cont'd
TYPE fIG.
BC858B
BC858C
BC859
BCB59A
BC859B
BC859C
BC860
BC860A
BCB60B
BCB60C
BCF29
BCF30
BCF32
1!Cf33
BCF70
BCF81
BCV26
BCV27
BCV46
BCV47
BOO1
BOO2
BCW29
BCW30
BCW31
BCW32
BCW33
BCW60
BCW60A
BCW&lB
BCW60C
BCW60D
BCW61
BCW61A
BCWti1B
BCWS1C
BCWSlD
BCW65
BCW65A
BCWti5B
BCWti5C
BCWti6
BCW66F
BCW66G
BCW66H
BCWS7
BCWS7A
BCWti7B
BCWti7C
BCW66
BCW68F
BCW68G
BCW66H
BCW69
BCW70
BCW71
BCW72
BCW81
BCW89
BCX17
BCX18
BCX19
BCX20
BCX70
BCX70G
BCX70H
BCX70J
BCX70K
BCX71
BCX71G
BCX71H
BCX71J
BCX71K
BSR13
BSR14
BSR15
BSR16
BSR17
BSR17A
BSV52
II£SCRIPTlIIf
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NCISE
PNP LOW NCISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
PNP LOW NOISE
NPN LOW NOISE
PNP DARLINGTON
NPN DARLINGTON
PNP DARLINGTON
NPN DARLINGTON
NPN LOW NOISE
NPN LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN IJN'i NOISE
NPN LOW NOISE
NPN LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP HIGH CURRENT
PNP LOW NOISE
PNP LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
PNP LOW NOISE
PNP HIGH CURRENT
PNP HIGH CURRENT
NPN HIGH CURRENT
NPN HIGH CURRENT
NPN LOW NDISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
NPN LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
PNP LOW NOISE
NPN AMPUSWITCH
NPN AMPUSWITCH
PNP AMPLISWITCH
PNP AMPLISWITCH
NPN AMPUSWITCH
NPN AMPUSWITCH
NPN SAT SWITCH
sVeEt BVEBO lceo @Ves
BVcao
hfE
@ v" @I,
(Vll.1S) (VOIl1I) (Vll.1S) (nA) (VOIl"S)
(Vll.1S) (mA)
MIN
Mil
IIIN
MAX
111M
MAX
30
30
30
30
30
30
50
50
50
50
32
32
32
32
50
50
40
40
80
80
80
80
32
32
32
32
32
3232323232323232323260
80
60
60
75
75
75
75
45
45
45
45
60
60
60
60
50
50
50
50
50
80
50505030-
45
45-
454545454545454560
75
60
60
60
60
20
30
30
30
30
30
30
45
45
45
45
32
32
32
320
45
45
30
30
60
60
60
60
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
45
45
45
45
32
32
32
32
45
45
45
45
45
45
45
45
45
60
45
25
45
25
45
45
45
45
45
45
45
45
45
45
40
40
40
60
40
40
12
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10
10
10
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
6.0
5.0
5.0
6.0
6.0
5.0
15
15
15
15
15
15
15
15
15
15
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
20
20
202020202020202020
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
100
100
100
100
100
100
100
100
100
100
20202020202020202020-
30
10
20
10
50
50
100
30
30
30
30
30
30
30
30
30
30
32
32
32
32
20
20
30
30
30
30
20
20
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
45
45
45
45
32
32
32
32
45
45
45
45
20
20
20
20
20
20
20
20
20
20
45
45
45
45
45
45
45
45
45
45
50
60
50
50
30
30
10
220
420
125
125
220
420
125
125
230
420
120
215
475
800
800
250
475
800
800
250
475
200
420
215
420
20.000
20.000
10.000
10.000
110
200
120
215
110
200
420
130
120
180
250
380
120
120
180
250
380
100
100
160
250
100
100
160
250
100
100
160
250
100
100
160
250
120
215
110
200
420
120
100
100
100
100
120
120
180
250
380
120
120
180
250
380
100
100
100
100
50
100
40
800
260
500
450
800
500
800
-
220
450
260
500
220
450
800
630
220
310
460
630
630
220
310
460
630
630
250
400
630
630
250
400
630
630
250
400
630
630
250
400
630
260
500
220
450
800
260
600
600
600
600
630
220
310
460
630
630
220
310
460
630
300
300
aoo
aoo
150
·300
120
33
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10
10
10
10
1.0
1.0
1.0
20
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.05
2.0
2.0
100
100
100
100
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
2.0
2.0
2.0
2.0
2.0
2.0
100
100
100
100
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
150
150
150
150
10
10
10
V,,(W)@I,
(VOIl1I)
(mA)
MAX
0.65
100
100
0.65
0.65
100
100
0.65
0.65
100
0.65
100
0.65
100
0.65
100
0.65
100
0.65
100
0.30
10
0.30
10
0.25
10
0.25
105
0.30
10
10
0.25
100
1.0
1.0
100
10
100
1.0
100
0.25
10
0.25
10
0.30
10
0.30
10
0.25
10
0.25
10
0.25
10
0.55
50
0.55
50
0.55
50
0.55
50
0.55
50
0.55
50
0.55
50
0.55
50
0.55
50
0.55
50
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
0.70
500
10
0.30
0.30
10
0.25
10
10
0.25
0.25
10
0.30
10
0.62
500
0.62
500
0.62
500
0.62
500
0.55
50
0.55
50
0.55
50
0.55
50
50
0.55
0.55
50
0.55
50
0.55
50
0.55
50
n.55
50
1.60
500
1.00
500
1.60
500
1.60
500
50
0.30
0.30
50
0.40
50
CoO
Nf
(dB)
IT
(pF) (MHz)
MAX TY1'
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
4.5
2.5
2.5
4.5
2.5
3.5
3.5
3.5
3.5
2.5
2.5
4.5
4.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.5
4.5
4.5
4.5
4.5
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.5
4.5
2.5
2.5
2.5
4.5
8.0
8.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
4.5
4.5
4.5
4.5
4.5
8.0
8.0
8.0
8.0
4.0
4.0
4.0
10..
(-)
MAX MAX
150
150
150
150
150
150
150
150
150
150
150
150
10
10
4.0
4.0
4.0
4.0
3.0
3.0
3.0
3.0
4.0
4.0
4.0
4.0
4.0
4.0
300
300
150
300
-
220
220
220
-
-
220
300
300
10
10
10
10
10
10
10
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
150
150
300
300
300
250
250
250
250
250
180
180
180
180
180
170
170
170
170
170
170
170
170
-
200
200
200
200
200
200
200
200
-
150
150
10
10
10
10
10
10
300
aoo
aoo
150
100
100
-
200
200
-
250
250
250
250
250
180
180
180
180
180
250MIN
300MIN
200MIN
200MIN
250MIN
300MIN
500
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
-
-
-
-
-
-
-
-
285
285
100
100
225
250
18
MARKING $1_
UAllED
CODE
DEVICE
3K
3L
4A
4B
4C
4E
4f
4G
C7
C8
07
08
H7
K9
FD
FF
FE
FG
K7
KB
Cl
C2
Dl
D2
D3
M
AS
N:,
AD
SA
BB
BC
BIl
BC5588
BC558C
BC559
BC559A
BC5598
BC559C
BC560
BC560A
BC560B
BC560C
-
-
MPSA64
MPSA14
MPSA77
MPSA27
-
-
-
-
EA
EB
EC
EF
EG
EH
DA
DB
DC
OF
DG
DH
-
-
-
-
HI
H2
Kl
K2
-
K3
-
H3
-
Tl
12
Ul
U2
NJ
AH
iU
AK
BG
BH
BJ
BK
U7
U8
17
T8
U9
U92
82
-
-
-
-
-
2N2222A
2N2222A
2N2907A
2N2907A
2N2369A
'"
Central
Semlconducto.
CO'II.
5mall 51gnal Transistors
SOT-323 Case, 250mW
mini
60
5.0
10
50
100 300
10
150
1.6
500
8.0
200
CMST3904
40
6.0
50'
30
100 300
1.0
10
0.3
50
4.0
300
5.0
CMST3906
40
5.0
50'
30
100 300
1.0
10
0.4
50
4.5
250
4.0
Transistors
CERSOT-23 Case
Top View
•
•
•
•
Bottom View
Hermetically Sealed, Ceramic Leadless Chip Carrier.
Ultra Miniature Surface Mount Case.
Mounts Directly on Standard SOT-23 Mounting Pads.
Includes PrecapVisual - Similar to JANTXV.
75
100
300
50
CHT2907A PNP AMPUSWITCH
15
60
400'
10
20
50
150
10
150
1.0
1.0
500
10
1.0
0.2
10
30
30
0.4
0.25
30
100
120
20
100
1.0
0.5
75
0.1
10
0.4
150
100
1.0
10
1.6
500
100
300
50
••mlconducto. CO'II_
10
10
40
100
Central™
10
10
500
40
CHT2369A NPN SAT SWITCH
1.0
34
10
10
150
10
500
10
4.0
500
18
8.0
200
100
Small Signal Transistors
SOT-89 Case, 1.2W
General Purpose Amplifier/Switches
Devices are listed in order of descending breakdown voltage.
NPN
PNP
Devices are listed in order of descending breakdown voltage.
Devices are listed in order of descending breakdown voltage.
Darlington'
Devices are listed in order of descending hFE.
Shaded areas indicate Darlington.
35
Cantral™
SemlcDnductDr CDI'II.
Small SllInal nanslstars
SOT-223 Case, 2.0W
General Purpose Amplifier/Switches
Devices are listed in order of descending breakdown voltage.
NPN
PNP
Devices are listed in order of descending breakdown voltage.
PNP
High Voltage
Devices are listed in order of descending breakdown voltage.
NPN
CZTA44
450
400
6.0
100
400
50
CZTA42
300
300
6.0
100
200
40
CZT5551
180
160
6.0
50
120
80
200
250
10
10
0.75
50
7.0
20
10
30
0.5
20
4.0
50
5.0
10
0.2
50
6.0
100
PNP
Darlington
Devices are listed in order of descending hFE.
NPN
PNP
Shaded areas indicate Darlington.
Note: SOT-223 also mounts directly on DPAK solder pads.
Cant.al™
_. .Iconductor c.....
36
8.0
#-
~
"7"If'
"'Ie
,PD
B'leao :BVceo
~"
CZT2955
CZT5338
00:
(V)
MIN
MIN
(A)
AMPUSWITCH
3.0
2.0
100
100
DARLINGTON
~5,0'
2.0-
·100
100
1,000
AMPUSWITCH
6.0
2.0
100
70
20
HIGH CURRENT SWITCH
5.0
2.0
100
100
30
)"
,
@IC
hFE
MIN
10
.'"
CZT3055
I
SOT-223 Case
OESCRIPTION
;.t,
m1
Power Transistors
I
I
m
fy
Vce(SAT)@
(V) I
(AI
(MH%)
MIN'
MAX .
MAX
100
3.0
1.2
3.0
3.0
4.0
5.0
3.0
4.0:
70
4.0
1.1
4.0
2.5
120
2.0
1.2
5.0
30
Shaded areas indicate Darlington.
power Transistors
DPAK Case
General Purpose Amplifier/Switches
Devices are listed in order of descending breakdown voltage
CJD31C
CJD32C
3.0
15
100
100
10
50
3.0
1.2
3.0
3.0
CJD41C
CJD42C
6.0
20
100
100
15
75
3.0
1.5
6.0
3.0
CJD3055
CJD2955
10
20
70
60
20
100
4.0
1.1
4.0
2.0
CJD200
CJD21 0
5.0
12.5
40
25
45
180
2.0
1.8
5.0
65
High Voltage
Devices are listed in order of descending breakdown voltage.
CJD13003
1.5
15
700'
400
5.0,
25
1.0
3.0
1.5
4.0
CJD50
1.0
15
500
400
30
150
0.3
1.0
1.0
10
0.5
15
300
300
30
240
0.05
---
---
---
1.0
15
350
250
30
150
0.3
1.0
1.0
10
CJD340
CJD47
CJD350
Shaded areas indicate Darlington.
37
Central™
Semiconductor Co,•.
Swltchlnll Diodes
SOD-80 Case
CLL914
100
250
SWITCHING DIODE
CLL2003
HIGH VOLTAGE SWITCHING DIODE
200
250
CLL41SO
HIGH CURRENT,SWITCHING DIODE
50
300
CLL4448
SWITCHING DIODE
100
200
SOT-23 Case
1.0
1.0
1.0
1.0
10
100
200
100
4.0
50
4.0
4.0
Devices are listed in order of ascending breakdown voltage.
CMPD2003
SINGLE HIGH VOLTAGE SWITCHING DIODE
50
75
75
90
90
90
100
100
100
175
175
250
CMPD2004
SINGLE HIGH VOLTAGE SWITCHING DIODE
300
CMPD2004S
DUAL HIGH VOLTAGE SWITCHING DIODE, IN SERIES
300
300
200
200
250
250
250
200
200
200
400
400
200
200
200
100
200
CMPD41S0
SINGLE SWITCHING DIODE
CMPD2836
DUAL SWITCHING DIODE, COMMON ANODE
CMPD2838
DUAL SWITCHING DIODE, COMMON CATHODE
CMPD1001
SINGLE HIGH CURRENT DIODE
CMPD1001A
DUAL HIGH CURRENT DIODE, COMMON ANODE
CMPD1001S
DUAL HIGH CURRENT, IN SERIES
CMPD914
SINGLE SWITCHING DIODE
CMPD4448
SINGLE SWITCHING DIODE
CMPD7000
DUAL SWITCHING DIODE, IN SERIES
CMPDSOO1
SINGLE INDUCTIVE LOAD DIODE
CMPDSOO1S
DUAL INDUCTIVE LOAD DIODE, IN SERIES
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.0
1.0
1.0
1.0
1.0
200
1.0
100
50
50
200
200
200
10
100
100
200
200
100
100
100
4.0
6.0
6.0
50
50
50
4.0
4.0
15
50
50
50
50
50
SOT-143 Case
DUAL SWITCHING DIODE, ISOLATED
DUAL HIGH CURRENT DIODE, ISOLATED
$III
mini
TM
. .
#-
SOT-323 Case
I CMSD4448 ISINGLE SWITCHING DIODE
C.nlral™
.ellliconductor Corp.
38
4.0
SchottllV Diode.
- #-
500-323 Case
High Current
mini
I CMDSH-3 I
I 100 I 5.0 I 7.0' I
30
100
0.55
SINGLE
70
15
0.41
1.0
1.0
2.0
CMPD6263A DUAL, COMMON ANODE
70
15
0.41
1.0
1.0
2.0
CMPD6263C DUAL, COMMON CATHODE
70
15
0.41
1.0
1.0
2.0
CMPD6263S
70
15
0.41
1.0
1.0
2.0
SINGLE
SOT-23 Case
Low Current
CMPD6263
DUAL, IN SERIES
High Current
CMPSH-3
SINGLE
30
100
0.45
15
5.0
7.0'
CMPSH-3A
DUAL, COMMON ANODE
30
100
0.45
15
5.0
7.0'
CMPSH-3C
DUAL, COMMON CATHODE
30
100
0.45
15
5.0
7.0'
CMPSH-3S
DUAL, IN SERIES
30
100
0.45
15
5.0
7.0'
39
Central™
Semlconducto.
CO'II.
Low Leakage Diodes
SOD-80 Case
CLL457A
70
200
25
60
1.0
100
6.0
CLL459A
200
200
25
175
1.0
100
8.0
CLL3595
150
150
1.0
125
1.0
200
8.0
stablstor Diode
SOT-23 Case
Cantr.ITM
Samlconducto.
CO'II.
40
zener Diodes
M
mini
-
SOO-323
IZT =
(mA)
@
SOT-23
GENERAL
PURPOSE
* Available on special order; consult factory.
41
Central™
••lIIlconductor Corp.
Zener Diodes (Continued)
SOT-23
LOW LEVEL
Izr = PROELECTRON @ IZT =
(IiA) SPECIFICATION (rnA)
@
* Available on special order; consult factory.
Cantral™
__Iconducto. CO'It_
42
zener Diodes (Continued)
POWER
SOOmw
1.0W
~
~
CASE
MELF
SOD-80
GENERAL
PURPOSE
@Izr=
(rnA)
3.6
3.9
CLL4729A
69
CLL4730A
64
4.3
CLL4731A
58
53
ZENER
VOLTAGE
LOW LEVEL
@Izr=
(IlA)
4.7
5.1
CLL4689
50
CLL4732A
CLL4733A
5.6
CLL4690
50
CLL4734A
5.0
6.2
6.8
CLL4691
50
CLL4735A
41
CLL4692
50
CLL4736A
37
7.5
CLL4693
34
CLL4694
50
50
CLL4737A
8.2
8.7
CLL4738A
31
CLL4695
50
9.1
CLL4696
50
CLL4739A
10
11
CLL4697
50
CLL4740A
28
25
CLL4698
50
CLL4741A
23
12
13
14
15
16
17
18
19
CLL4699
CLL4700
50
50
CLL4742A
21
19
CLL4701
50
20
CLL4707
22
CLL4708
24
CLL4709
25
27
CLL4710
28
CLL4712
30
CLL4713
33
36
CLL4714
CLL4743A
49
45
CLL4702
50
CLL4744A
17
CLL4703
50
50
50
50
50
50
50
50
50
50
50
50
CLL4745A
15.5
CLL4746A
14
CLL4747A
12.5
CLL4704
CLL4705
CLL4706
CLL4711
'.
39
43
47
51
56
CLL4748A
11.5
CLL4749A
10.5
CLL4750A
9.5
CLL4751A
a.5
CLL4752A
7.5
CLL4753A'
7.0
CLL4754A'
fl.5
CLL4755A'
6.0
CLL4756A'
5.5
CLL4757A'
5.0
4.5
CLL4758A'
62
CLL4759A'
68
75
82
91
100
CLL4760A'
CLL4761A'
4.0
3.7
3.3
CLL4762A'
CLL4763A'
3.0
CLL4764A'
2.5
2.8
* Available on special order; consult factory.
43
Cantral™
sellllcDnductDr CDr...
Current Limiting Diodes
SOO-80 Case
MAXIMUM RATINGS (TL
Peak Operating Voltage
Power Dissipation
Operation and Storage
Junctipn Temperature
=75°C)
SYMBOL
POV
UNITS
V
100
800
mW
-65 to + 200
°C
Po
ELECTRICAL CHARACTERISTICS (TA =25°C)
CCLMOO35
0.010 0.035 0.060
8.0
4.00
004
CCLM0130
0.050 0.130 0.210
6.0
2.00
0.6
CCLM0300
0.200 0.310 00420
4.0
1.00
0.8
CCLM0500
00400 0.515 0.630
2.0
0.50
1.1
CCLM0750
0.600 0.760 0.920
1.0
0.20
104
CCLM1000
0.880 1.100 1.320
0.65
0.10
1.7
CCLM1500
1.280 1.500 1.720
0.45
0.07
2.0
CCLM2000
1.680 2.000 2.320
0.35
0.05
2.3
CCLM2700
2.280 2.690 3.100
0.30
0.03
2.7
CCLM3500
3.000 3.550 4.100
0.25
0.02
3.2
CCLM4500
3.900 4.500 5.100
0.20
0.Q1
3.7
CCLM5750
5.000 5.750 6.500
0.05
0.005
4.5
The Temperature Coefficient is measured between the following points: +250 C, +50oC
(1) TESTED USING THE PULSED METHOD. (PULSE WIDTH (ms) =
27.5
IpNOM (mA)
Central™
Mmlconductor Corp.
44
)
Hlllh current, Current Llmitinll Dlades
500-80 Case
MAXIMUM RATINGS (TL =75°C)
Peak Operating Voltage
Power Dissipation
Operation and Storage
Junction Temperature
SYMBOL
POV
IMPEDANCE
.'0,\;,.=2$'1
,
•
(~)""
6.56
8.2
°C
1"-," KNEE
,
IMPEDANCE
IJMI11N$ .
VOLTAGE
''l:r'OVp25V 'ZK@VK;=I.oV ,""OIL;=O.8IpMIN
,(v)
(MQ)
(1(0)
MIN
MIN
MAX
9.84
0.32
15
3.1
' '"
'NOM MAX
CCLHM080
-65 to + 200
=25°C)
>:, i~,'~"'AMIC
CURRENT (1)
V
mW
Po
ELECTRICAL CHARACTERISTICS (TA
REGULA:ToR
UNITS
50
800
CCLHM100
8.00
10
12
0.17
6.0
3.5
CCLHM120
9.60
12
14.4
0.08
3.0
3.8
CCLHM150
12
15
18
0.03
2.0
4.3
The Temperature Coefficient is measured between the following points: +25 0 C, +50 0 C
(1) TESTED USING THE PULSED METHOD. (PULSE WIDTH (ms)
45
=
27.5
)
IpNOM(mA)
Cantral™
S8mlconductor Corll.
Rectifiers, General purpose
1.0 to 3.0 Amperes
200 to 1000 Volts
30
30
200
IfF
•
MELF
5MB
CLLR1-02
CMR1-02
CMR3-02
CLLR1-04
CMR1-04
CMR3-04
CLLR1-06
CMR1-06
CMR3-06
CLLR1-10
CMR1-10
CMR3-10
1.1 V
1.1 V
1.2V
10llA
10IlA
S.OIlA
46
SMC
Rectifiers, Fast Recovery
1.0 Ampere
200 to 1000 Volts
1.3V
5.0~A
150ns
250ns
500ns
47
Central™
semlconducto, Co,...
Rectifiers, Ultra Fast
1.0 to 6.0 Amperes
100 to 600 Volts
30
150
30
#
Central™
semiconductor Co.....
•
MELF
8MB
CLLR1U-01
CMR1U-01
CMR3U-01
CLLR1U-02
CMR1U-02
CMR3U-02
CLLR1U-04
CMR1U-04
CMR3U-04
R1U-06
CMR3U-06
1.0V
1.0V
1.0V
1.0V
1.0V
1.25V
1.25V
1.25V
1.4V
1.4V
5.01lA
5.01lA
5.01lA
50ns
50ns
50ns
100ns
100ns
75
#~
DPAK
8MC
1.0V
48
75
CUD3-02
CUD6-02C
0.95V
1.2V
5.01lA
5.01lA
35ns
35ns
Rectifiers, Schottky
1.0 to 6.0 Amperes
20 to 60 Volts
~
MELF
--5MB
SOT-89
5 MB
SOT-223
CLLSH1-20 CMSH1-20
CLLSH1-40 CMSH1-40
CMSH3-20
CXSH-4
CZSH-4
CLLSH1-60 CMSH1-60
O.5V
O.55V
O.5V
O.55V
O.7V
O.7V
DPAK
SMC
CMSH3-40 CSHD3-40
CMSH3-60
O.5V
O.55V
O.55V
O.55V
O.5V
O.6V
O.7V
O.7V
49
Cantral™
.emlconductor Co.....
Bridge Rectifiers
Single Phase, Full Wave
0.5 to 1.0 Ampere
100 to 1000 Volts
,
30
50
50
~
HDRRIDG£"
4'
HDDIP
SMDIP
GENERAL
PURPOSE
GENERAL PURPOSE
FAST
RECOVERY
50
#-
ULTRAFAST
RECOVERY
CBR 1U-D01 OS
CBRHD-02
CBR1-D020S
CBR1 F-D020S
CBRHD-04
CBR1-D040S
CBR1 F-D040S
CBRHD-06
CBR1-D060S
CBR1 F-D060S
CBRHD-10'
CBR1-D100S
CBR1 F-D1 OOS
1.0V @ OAA
1.1V @ 1.0A
1.3V @ 1.0A
5.01lA
101lA
10llA
10llA
200ns
SOns
300ns
500ns
• Available on special order only, consult factory.
Centra
IT"
S.mlconductor Cor•.
50
CBR1 U-D020S
1.05V @ 1.0A
seRS
(Silicon Controlled Rectifiers)
Trlacs
2.0 Amperes
0.8 Ampere RMS
400 Volts
200 to 800 Volts
0.8
ITtMttPS)
67
67
10
10
~
SOT-23
CMPS5064
@Tere)
tr,1I4 (~P$)
•
5.0mA
5.0mA
10
•
SOT-89
200
CQ89B
#-
:"'><'~:",.,\
CQ89D
CQ89DS
'600 ,'"
CQ89M
CD89MS
CQ89N
CQ89NS
25mA
5.0mA
25mA
5.0mA
25mA
5.0mA
25mA
5.0mA
2.0V
2.0V
25mA
5.0mA
VRRM (VOLts)
'~.'
'c'
0.8V
10
"
CZS5064
0.8V
80
cA.SE.,
#-
200llA
80
"
SOT-223
200llA
2.0
la,
'-
't
'l,
'I.
e
,\800
':,
'f \\
'G.T'QI
,1QTQU\\
''\ \,
"'lGt QHJ
"I.,
!!"" ,~
IG'.QJ~',
VGt· ,Qf~cQtV
., 1M'
51
.
CQ89BS
Central™
Semiconductor Co••.
52
Detailed Data Sheets
(in alphanumeric order)
53
Central™
2N7002
Semiconductor Corp.
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002
type is a N-Channel Field Effect Transistor,
manufactured by the N-Channel OMOS
Process, designed for high speed pulsed
amplifier and driver applications.
Marking Code is 702.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current (TC=25 0 C)
Continuous Drain Current (TC=1 OOoC)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
60
60
40
115
75
115
800
800
350
VOS
VOG
VGS
10
10
IS
10M
ISM
Po
-55 to +150
357
TJ,Tstg
8JA
UNITS
V
V
V
mA
mA
mA
mA
mA
mW
°c
°C/mW
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
IGSSF
IGSSR
lOSS
lOSS
10(ON)
BVOSS
VGS(th)
VOS(ON)
VOS(ON)
rOS(ON)
TEST CONDITIONS
VGS=20V
VGS=-20V
VOS=60V, VGS=O
VOS=60V, VGS=O, TA=125 0 C
VOS ~ 2VOS(ON), VGS=10V
10=101lA
VOS=VGS, 10=2501lA
VGS=10V,10=500mA
VGS=5.0V, 10=50mA
VGS=10V,10=500mA
MIN
TYP
500
60
1.0
105
2.1
3.7
54
MAX
100
-100
1.0
500
2.5
3.75
1.5
7.5
UNITS
nA
nA
IlA
IlA
mA
V
V
V
V
Q
SYMBOL
rOS(ON)
rOS(ON)
rOS(ON)
9FS
C rss
Ciss
COSS
ton
toft
VSO
TEST CONDITIONS
MIN
VGS=10V, 10=500mA, TA=100 oC
VGS=5.0V,10=50mA
VGS=5.0V, 10=50mA, TA=100 oC
80
VOS ~ 2VOS(ON), 10=200mA
VOS=25V, VGS=O, f=1.0MHz
VOS=25V, VGS=O, f=1.0MHz
VOS=25V, VGS=O, f=1.0MHz
VOO=30V, '0=10V, RG=25Q, RL =25Q
VOO=30V, '0=10V, RG=25Q, RL=25Q
VGS=OV, 'S=11.5mA
TYP
MAX
6.2
13.5
7.5
13.5
UNITS
Q
Q
Q
mmhos
pF
pF
pF
ns
ns
V
5.0
50
25
20
20
-1.5
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 118 (3.00 )
.003(0.08)
.006(0.15)
.041 ( 1 .05)
NOMINAL
t
J
MAX IMUM
.106(2.70)
MAXIMUM
-1
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAO COOE:
1) GATE
2) SOURCE
3) ORAIN
55
Central™
BAS28
Semiconductor Car•.
DUAL, ISOLATED HIGH SPEED
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS28
type is a ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high speed switching applications.
Marking code is A61.
SOT-143 CASE
MAXIMUM RATINGS (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 Ilsec.
Forward Surge Current, tp=1 msec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
IFSM
PD
TJ,Tstg
8JA
UNITS
V
V
mA
mA
mA
mA
mA
mW
75
85
250
250
4000
2000
1000
350
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS (T A=25 0 C unless otherwise noted)
SYMBOL
IR
IR
IR
VF
VF
VF
VF
CT
trr
Os
VFR
MIN
TEST CONDITIONS
VR=25V, TA=150 oC
VR=75V
VR=75V, TA=150oC
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
VR=O, f=1 MHz
IF=IR=10mA, RL=100Q, Rec. to 1.0mA
IF=10mA, VR=5.0V, RL =500Q
IF=10mA, t r=20ns
56
MAX
30
1.0
50
0.715
0.855
1.000
1.250
2.0
6.0
45
1.75
UNITS
IlA
IlA
IlA
V
V
V
V
pF
ns
pC
V
All dimensions in inches (mm).
TOP VIEW
-1
. 110 ( 2 .79)
. 118 ( 3 . 00)
.004(0.10)
.005(0.13)
I•. 0 7 9 ( 2 . 0 1 ).1
,
,15·
,
~
t
.047(1.19)
.051 ( 1 .30)
+
.037(0.94)
.043(1.09)
i"
0 7 1( 1 . 8 0
li
.014(0.36)
.018(0.46)
LEAD CODE:
1)
2)
3)
4)
ANODE 1
ANODE 2
CATHODE 2
CATHODE 1
R1
57
Central™
BAS56
Semiconductor Cor...
DUAL HIGH CURRENT
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAS56
type is an ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in an epoxy molded surface mount
package with isolated dual diodes, designed
for high current, high speed switching
applications.
Marking code is L51.
SOT-143 CASE
MAXIMUM RATINGS (T A=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 ~sec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
8JA
60
60
200
600
4000
1000
350
UNITS
V
V
mA
mA
mA
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
IR
IR
IR
VF
VF
VF
CT
trr
as
VFR
VFR
TEST CONDITIONS
MIN
VR=60V
VR=60V, TA=150oC
VR=75V
IF=10mA
IF=200mA
IF=500mA
VR=O, f=1 MHz
IF=IR=400mA, RL=100n, Rec. to 40mA
IF=10mA, VR=5.0V, RL=500n
IF=400mA, t r=30ns
IF=400mA, t r=100ns
58
MAX
100
100
10
0.75
1.00
1.25
2.5
6.0
50
1.2
1.5
UNITS
nA
~A
~A
V
V
V
pF
ns
pC
V
V
All dimensions in inches (mm).
TOP VIEW
. 1 10 (2.79)
. 1 18 (3. 00)
.004(0.10)
.005(0.13)
1•. 079 (2.01).1
,
f
.047 ( 1 . 19)
.051(1.30)
i
.037(0.94)
.043(1.09)
.030(0.76)
.033(0.84)
ii
.014(0.36)
.018(0.46)
0 7 1( 1 . 8 0
~i
LEAD CODE:
1) ANODE 1
2) ANODE 2
3) CATHODE 2
4) CATHODE 1
R1
59
Cantral™
BZX84C3V3 THRU BZX84C33
Sellliconductor COrli.
350mW ZENER DIODE
3.3 VOLTS THRU 33 VOLTS
5% TOLERANCE
DESCRIPTION:
The
CENTRAL SEMICONDUCTOR
BZX84C3V3 Series Silicon Zener Diode is a
high quality voltage regulator for use in
industrial, commercial, entertainment and
computer applications.
SOT-23 CASE
ABSOLUTE MAXIMUM RATINGS
Power Dissipation (@TA=250 C)
Operating and Storage Temperature
Thermal Resistance
SYMBOL
PD
TJ.Tstg
0JA
350
-65 to +150
357
UNIT
mW
°C
oCIW
ELECTRICAL CHARACTERISTICS (TA=25 0 C). VF=0.9V MAX @ IF=10mA FOR ALL TYPES.
60
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 .80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
f
J
MAX IMUM
.106(2.70)
MAXIMUM
-1
.047(1.19)
.063(1.60)
•
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) ANODE
2) NO CONNECTION
3) CATHODE
R1
61
Central™
Semlcanducta. Ca'lI.
CBAS17
LOW VOLTAGE STABISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBAS 17
type is a planar epitaxial silicon switching
diode, designed for low voltage stabilizing
applications.
Marking code is A91.
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
250
350
UNITS
mA
mW
-65 to +150
357
°C
°CIW
SYMBOL
Peak Repetitive Forward Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
IFRM
PD
TJ,Tstg
8JA
ELECTRICAL CHARACTERISTICS (T A=25 0 C unless otherwise noted)
SYMBOL
VF
VF
VF
VF
VF
IR
CT
MIN
.580
.665
.725
.750
.870
TEST CONDITIONS
IF=0.1mA
IF=1.0mA
IF=5.0mA
IF=10mA
IF=100mA
VR=4.0V
VR=O, f=1 MHz
62
TYP
.665
.745
.805
.825
.920
MAX
.680
.760
.820
.840
.960
5.0
140
UNITS
V
V
V
V
V
/!A
pF
All dimensions in inches (mm).
TOP VIEW
. 1 1 0 ( 2 . 80 )
. 1 1 8 ( 3 . 00 )
---1
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
NOMINAL
f
.106(2.70)
~.~-1
MAXIMUM
. 047 ( 1 . 1 9 )
. 063 ( 1 . 60 )
MAXIMUM
i
1
.014(0.35)
.020(0.50)
. 037 ( 0 .94 )
. 050 ( 1 . 28 )
NO
CONNECTION
A
---L~---'rl
C
R1
63
Central™
CBCP68 NPN
CBCP69 PNP
Semiconductor Carp.
SILICON COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBCP68,
CBCP69 types are complementary silicon
transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
high current capability.
SOT-223 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
V
A
A
mA
mA
W
SYMBOL
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-Peak
Base Current
Base Current-Peak
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
25
20
5.0
1.0
2.0
100
200
2.0
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PD
-65 to +150
·62.5
TJ,Tstg
8JA
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otlierwise noted)
SYMBOL
ICBO
ICBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
VBE(ON)
hFE
MIN
TEST CONDITIONS
VCB=25V
VCB=25V, TA=150oC
VEB=5.0V
IC=10IlA
IC=10mA
IE=1.0IlA
IC=1.0A, IB=100mA
VCE=10V,IC=5.0mA
VCE=1.0V, IC=1.0A
VCE=10V,IC=5.0mA
TYP
MAX
10
1.0
10
25
20
5.0
0.5
0.6
1.0
50
64
UNITS
IlA
mA
IlA
V
V
V
V
V
V
SYMBOL
hFE
hFE
fT
Cob
TEST CONDITIONS
VCE=1.0V,IC=500mA
VCE=1.0V,IC=1.0A
VCE=5.0V, IC=10mA, f=20MHz
VCB=5.0V, IE=O, F=450kHz
MIN
85
60
65
TYP
MAX
375
UNITS
MHz
pF
25
All dimensions in inches (mm).
TOP VIEW
.248(6.30
.264(8.71)
.063(1.60)
.067(1.70)
4
i
.130(3.30)
. 146 ( 3 . 71 )
2
3
.264(8.71)
.287(7.29)
j
.091(2.31)
. 181 ( 4 . 60)
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
R1
65
Central™
CBCX68 NPN
CBCX69 PNP
Samlconductor Carll.
SILICON COMPLEMENTARY
SMALL SIGNAL TRANSISTORS
DESCRIPTION
The CENTRAL SEMICONDUCTOR CSCX68,
CSCX69 types are complementary silicon
transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
high current capability.
SOT-89 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Collector Current-Peak
Sase Current
Sase Current-Peak
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
25
20
5.0
1.0
2.0
100
200
1.2
VCES
VCEO
VESO
IC
ICM
IS
ISM
PD
A
A
mA
mA
W
-65 to +150
104
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICSO
ICSO
'ESO
SVCSO
SVCEO
SVESO
VCE(SAT)
VSE(ON)
VSE(ON)
TEST CONDITIONS
VCS=25V
VCS=25V,TA=150oC
VES=5.0V
MIN
IC=10~A
TYP
MAX
100
10
10
25
20
5.0
IC=10mA
IE=1.0~A
0.5
IC=1.0A, IS=100mA
VCE=10V,IC=5.0mA
VCE=1.0V, IC=1.0A
0.6
1.0
66
UNITS
nA
~A
~A
V
V
V
V
V
V
SYMBOL
TEST CONDITIONS
VCE=10V,IC=5.0mA
VCE=1.0V, IC=500mA
VCE=1.0V,IC=1.0A
VCE=5.0V, IC=10mA, f=20MHz
hFE
hFE
hFE
fT
MIN
50
85
60
65
TYP
MAX
UNITS
375
MHz
All dimensions in inches (mm).
TOP VIEW
.173(4.39)
. 181 ( 4.60 )
J
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
-------.---------+--
r
.092(2.34)
.100(2.54)
. 154 ( 3 .91 )
. 165 (4. 19)
6 .-----------
.015(0.38)
.016 ( 0 . 41)
1
~
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 118 ( 3 . 00)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
R1
67
CBR1-D020S SERIES
Central™
1.0 AMP DUAL IN LINE
BRIDGE RECTIFIER
DESCRIPTION:
Samlcanducta. Ca'lI.
The CENTRAL SEMICONDUCTOR
CBR1-D020S series types are silicon full wave
bridge rectifiers mounted in a durable epoxy,
surface mount, molded case, utilizing glass
passivated chips. To order devices on tape
and reel (1,000/13" reel) add TR13 suffix.
NOTE: Also available in Fast Recovery,
please contact factory for details.
SMDIP CASE
MAXIMUM RATINGS (TA=25°C)
CBR1D020S
200
VRRM
200
VR
140
VR(RMS)
SYMBOL
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=50 0 C) 10
Peak Forward Surge Current
IFSM
Operating and Storage
Junction Temperature
TJ,Tstg
CBR1CBR1D040S
D060S
400
600
400
600
280
420
1.0
CBR1D100S UNITS
1000
V
V
1000
700
V
A
50
A
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
VF
IR
IR
CJ
TEST CONDITIONS
IF=1.0A
VR=Rated VRRM
VR=Rated VRRM, TA=125 0 C
VR=4.0V, f=1.0MHz
68
MIN
TYP
25
MAX
1.1
10
0.5
UNITS
V
IlA
mA
pF
All dimensions in inches (mm).
TOP VIEW
.195(4.95)
.205(5.21)
.045 ( 1 . 14)
. 0 1 0 ( 0 . 2 5)
TYPICAL
r
r
"I f4--
~
.003(0.08)
.013(0.33)
.430(10.92
.290(7.37)
.310(7.87)
.245(6.22)
.255(6.48)
1
1
MAXIMUM
~
.040(1.02)
.060(1.52)
.320(8.13)
.365(9.27)
1
.025(0.64)
R1
69
~
..
Central™
Semiconductor Corll.
CBR1U-D010S
CBR1U-D020S
1.0 AMP ULTRA FAST
BRIDGE RECTIFIER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CBR1 U-D01 OS, CBR1 U-D020S types are
silicon full wave ultra fast bridge rectifiers
mounted in a durable epoxy surface mount
molded case, utilizing glass passivated chips.
SMDIPCASE
MAXIMUM RATINGS: (TA=250C unless otherwise noted)
CBR1 U-D01 OS
100
VRRM
100
VR
70
VR(RMS)
Average Forward Current (TA=40°C) 10
Peak Forward Surge Current
IFSM
Operating and Storage
SYMBOL
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
CBR1 U-D020S
200
UNITS
V
V
V
A
A
Junction Temperature
TJ,Tstg
°C
Thermal Resistance
eJA"i~"
°CIW
._:r,
ELECTRICAL CHARACTERISTIG,S: (TA~~,tfe
,
SvYMBOL
F
IR
IR
trr
~,
',,'
",:,;,"'"
t~VR=Rated
J~v
~de) '"
MIN
·D:;
10
ed VRRM
VRRM, T A=125°C
IF=500mA, IR=1.0A, Irr=250mA
70
MAX
1.05
5.0
UNITS
1.0
50
rnA
ns
V
IlA
All dimensions in inches (mm).
TOP VIEW
.195(4.95)
.205(5.21)
.045 ( 1 . 14)
. 0 1 0 ( 0 . 25) ~I ~
TYPICAL
.003(0.08)
. 013(0.33)
.430(10.92
.290(7.37)
.310(7.87)
.245(6.22)
.255(6.48)
1
r
+
r
rL...
1
AC
AC
MAXIMUM
lJ~
.040(1.02)
.060(1.52)
.320(8.13)
.365(9.27)
1
.025(0.64)
71
#-
Central™
Semiconductor Cor...
CBRHD SERIES
FEATURES:
HIGH DENSITY
1h AMP DUAL IN LINE
BRIDGE RECTIFIER
HD~
BRIDGE
• Truly efficient use of board space, requires
only 42mm2 of board space vs. 120mm2 of
board space for industry standard 1.0 Amp
surface mount rectifier .
•
• 50% higher density (amps/mm2) than the
industry standard 1.0 Amp surface mount
rectifier.
• Glass passivated chips for high reliability.
HD DIP CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted
in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MAXIMUM RATINGS: (TA=250C unless otherwise noted)
CBRHD
SYMBOL
-02
Peak Repetitive Reverse Voltage
VRRM
200
DC Blocking Voltage
VR
200
RMS Reverse Voltage
VR(RMS) 140
Average Forward Current (TA=400C)(1)
10
Average Forward Current (TA=400C)(2)
10
Peak Forward Surge Current
IFSM
Operating and Storage
Junction Temperature
CBRHD CBRHD
-04
-06
400
600
400
600
280
420
0.5
0.8
30
CBRHD
-10 * UNITS
1000
V
1000
V
700
V
A
A
A
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
VF
IR
IR
CJ
MIN
TEST CONDITIONS
IF=400mA (Per Diode)
VR=Rated VRRM
VR=Rated VRRM, TA=1250C
VR=4.0V, f=1.0MHz
1) Mounted on a Glass-Epoxy P.C.B.
2) Mounted on a Ceramic P.C.B.
* Available on special order, please consult factory.
72
TYP
20
MAX
1.0
5.0
500
UNITS
V
!!A
!!A
pF
All dimensions in inches (mm).
TOP VIEW
.095(2.41)
.105(2.67)
.017(0.43)
.029(0.74)
~
I
. 008 ( 0 . 20) ~I
.014(0.36)
t...
r-______________-.___
.004(0.10)
r
1
""'J
.200(5.08)
180(4.57)
.190(4.83)
.107(2.72)
.11712.97)
MAXIMUM
1
""'J
...
I
~
r
+
.145(3.68)
.155(3.94)
~
0
~I
0
.040(1.02)
~ .050(1.27)
-:~~~-'-l-:::~'----.--~---;~
t
.055(1.40)
.065(1.65)
73
.252(6.40)
.272(6.91)
.7
0
~I
.021(0.53)
.023(0.58)
Central™
CCLHM080
THRU
CCLHM150
Semiconductor Corp.
FEATURES
HIGH CURRENT
CURRENT LIMITING DIODE
•
•
•
•
•
LOW COST
SUPERIOR LOT TO LOT CONSISTENCY
HIGH RELIABILITY
LEADED DEVICES AVAILABLE
SPECIAL SELECTIONS AVAILABLE
SOD-80
DESCRIPTION
The CENTRAL SEMICONDUCTOR CCLHM080 series types are high current silicon field effect current
regulator diodes designed for applications requiring a constant current over a wide voltage range. These
devices are manufactured in the cost effective SOD-80 double plug case whicn provides many benefits
to the user including space savings and improved thermal characteristics. Special selections of Ip
(regulator current) are available for critical applications.
MAXIMUM RATINGS (Tl=75 0 C)
Peak Operating Voltage
Power Dissipation
Operating and Storage
Junction Temperature
SYMBOL
POV
Po
50
800
-65 to +200
TJ,Tstg
CCLHM080
6.56
8.20
9.84
0.32
CCLHM100
8.00
10.0
12.0
CCLHM120
9.60
12.0
14.4
CCLHM150
12.0
15.0
18.0
UNITS
V
mW
°C
15
3.1
-0.25 TO -0.45
0.17
6.0
3.5
-0.25 TO -0.45
0.08
3.0
3.8
-0.25 TO -0.45
0.03
2.0
4.3
-0.25 TO -0.45
• The Temperature Coefficient is measured between the following points: +25 0 C, + 50c C.
(1) TESTED USING THE PULSED METHOD. (PULSE WIDTH (ms) =
27.5
)
IpNOM (mA)
74
All dimensions in inches (mm).
. 130 ( 3 . 30)
.146(3.71)
. 016 ( 0 .41 )
0: ~~;:~ :~~
I
:[J;u---- Ht.004(O.10)
MAXIMUM
Marking Codes:
CCLHM080
BLACK
GREEN
YELLOW
CCLHM100
BLACK
ORANGE
PINK
CCLHM120
BLACK
ORANGE
WHITE
CCLHM150
BLACK
ORANGE
LIGHT BLUE
* Cathode Band
R1
75
Central™
Semlconducto. Co.p.
CCLM0035
THRU
CCLM5750
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CCLM0035 Series types are silicon field effect
current regulator diodes designed for
applications requiring a constant current over
a wide voltage range. These devices are
manufactured in the cost effective SOD-80
double plug case which provides many benefits
to the user including space savings and
Special
improved thermal characteritcs.
selections of Ip (regulator current) are available
for critical applications.
CURRENT LIMITING DIODE
SOD-80CASE
MAXIMUM RATINGS (TL = 75 0 C)
Peak Operating Voltage
Power Dissipation
Operation and Storage
Junction Temperature
SYMBOL
POV
PD
100
800
UNITS
mW
TJ,Tstg
-65 to + 200
°C
V
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CCLMOO35
0.010 0.035 0.060
8.0
4.0
0.4
+2.10 TO +0.10
CCLM0130
0.050 0.130 0.210
6.0
2.0
0.6
+2.10 TO +0.10
CCLM0300
0.200 0.310 0.420
4.0
1.0
0.8
+0.40 TO -0.20
CCLMOSOO
0.400 0.515 0.630
2.0
0.5
1.1
+0.15 TO -0.25
CCLM0750
0.600 0.760 0.920
1.0
0.2
1.4
0.0 TO -0.32
CCLM1000
0.880
1.100 1.320
0.65
0.1
1.7
-0.10 TO -0.37
CCLM1500
1.280 1.500 1.720
0.45
0.07
2.0
-0.13 TO -0.40
CCLM2000
1.680 2.000 2.320
0.35
0.05
2.3
-0.15 TO -0.42
CCLM2700
2.280 2.690 3.100
0.30
0.03
2.7
-0.18 TO -0.45
CCLM3500
3.000 3.550 4.100
0.25
0.02
3.2
-0.20 TO -0.47
CCLM4500
3.900 4.500 5.100
0.20
0.01
3.7
-0.22 TO -0.50
CCLM5750
5.000 5.750 6.500
0.05
0.005
4.5
-0.25 TO -0.53
• The Temperature Coefficient is measured between the following pOints: +250 C, + 50°C.
(1) TESTED USING THE PULSED METHOD.(PULSE WIDTH (ms)
76
=
27.5
)
Ip NOM (mA)
All dimensions in inches (mm).
. 016 ( 0 . 41)
r-
130 ( 3 . 30)
146 ( 3 . 71)
'" :~:; (: :~ ~ :[1-;---- Bt.004(0.10)
MAXIMUM
Marking Codes:
CCLMOO35
BLACK
LIGHT BLUE
WHITE
CCLM0130
BLACK
LIGHT BLUE
PINK
CCLM0300
BLACK
LIGHT BLUE
ORANGE
CCLM0500
BLACK
LIGHT BLUE
GREEN
CCLM0750
BLACK
LIGHT BLUE
DARK BLUE
CCLM1000
BLACK
GREEN
PINK
CCLM1500
BLACK
GREEN
ORANGE
CCLM2000
BLACK
GREEN
GREEN
CCLM2700
BLACK
GREEN
LIGHT BLUE
CCLM3500
BLACK
GREEN
DARK BLUE
CCLM4500
BLACK
GREEN
VIOLET
CCLM5750
BLACK
GREEN
WHITE
• Cathode Band
R1
77
~
..
Central™
CJD31C NPN
CJD32C PNP
Samlcanductor carp•
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CJD31 C, CJD32C types are Complementary
Silicon Power Transistors manufactured by
the epitaxial base process, mounted in a
surface mount package designed for power
amplifier and high speed switching
applications.
DPAKCASE
MAXIMUM RATINGS (TC=25°C)
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Continuous Collector Current
Peak Collector Current
Sase Current
Power Dissipation (TC=250C)
Power Dissipation (TA=250C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
UNITS
V
V
V
A
A
A
100
100
5.0
3.0
5.0
1.0
15
1.56
VCSO
VCEO
VESO
IC
ICM
IS
PD
PD
W
W
-65 to +150
8.33
80.1
°c
°C/w
°C/w
ELECTRICAL CHARACTERISTICS (TC=250C unless otherwise noted)
SYMBOL
ICEO
ICES
IESO
SVCEO
VCE(SAT)
VSE(ON)
hFE
hFE
fT
hfe
TEST CONDITIONS
VCE=60V
VCE=100V
VES=5.0V
IC=30mA
IC=3.0A, IS=375mA
VCE=4.0V, IC=3.0A
VCE=4.0V, IC=1.0A
VCE=4.0V, IC=3.0A
VCE=10V, IC=500mA, f=1.0MHz
VCE=10V, IC=500mA, f=1.0kHz
78
MIN
MAX
50
20
1.0
100
1.2
1.8
25
10
3.0
20
UNITS
IlA
IlA
mA
V
V
V
50
MHz
All dimensions in inches (mm).
TOP
VIEW
.248(6.30)
.268(6.80)
.085(2.15)
.096(2.45)
.203(5.15)
.215(5.45)
.016(0.40)
.024(0.60)
.053(1.35)
.065(1.65)
4
f
.145(3.69)
MINIMUM
----.J..---f_
j
.211 (5.35)
.222(5.65)
L _ _ _ _ _ _ _ _ _ ...l
~~1~~2~~3~_---4--
.033(0.85)
.061(1.55~lJ
.085(2.15)
. 112 (2.85)
+
T
I •. 030(0.75)
.016(0.40)
.024(0.60)
.037(0.95)
MAXIMUM
MAXIMUM
.030(0.75)
.061 ( 1 .55 )
. 091
2.3
BSC
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
79
Central™
~ CJD41C
..
NPN
CJD42C PNP
Semlconducto. CO....
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD41 C,
CJD42C types are Complementary Silicon
Power Transistors manufactured by the
epitaxial base process, mounted in a surface
mount package designed for power amplifier
and high speed switching applications.
DPAKCASE
MAXIMUM RATINGS (TC=25 0 C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation (TC=25 0 C)
Power Dissipation (TA=25 0 C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
100
100
5.0
6.0
10
2.0
20
1.75
VCBO
VCEO
VEBO
IC
'CM
'B
PD
PD
-65 to +150
6.25
71.4
UNITS
V
V
V
A
A
A
W
W
°c
°c/w
°c/w
ELECTRICAL CHARACTERISTICS (TC=25 0 C unless otherwise noted)
SYMBOL
'CEO
'CES
'EBO
BVCEO
VCE(SAT)
VBE(ON)
hFE
hFE
fT
hfe
TEST CONDITIONS
VCE=60V
VCE=100V
VEB=5.0V
IC=30mA
IC=6.0A, 'B=600mA
VCE=4.0V, IC=6.0A
VCE=4.0V, IC=300mA
VCE=4.0V,IC=3.0A
VCE=10V, 'C=500mA, f=1.0MHz
VCE=10V, IC=500mA, f=1.0kHz
80
MIN
MAX
50
10
500
100
1.5
2.0
30
15
3.0
20
UNITS
IlA
~A
IlA
V
V
V
75
MHz
All dimensions in inches (mm).
TOP
.248(6.30)
.268(6.80)
r
.085(2.15)
.096(2.45)
.016(0.40)
.024(0.60)
VIEW
1 .203(5.15)1
, .065(1.65)
I .2 1 5 ( 5 . 4 5) 1-+_...L.-·_
0_ 5_ 3...c(,--1_._3_5...:...)
(
f
.145(3.69)
I
4
:
:
I
I
M_I_NL~IM_U_M_-4_l _________ J
__
.033(0.85)
.061(1. 55
l
~ ~1,---..,2,.,-----,--,3--,
U ---+1--
l
l
-rL_LJ
. 030 ( 0 .
T
~
[
.049(1.25)
.016(0.40)
.024(0.60)
.037(0.95)
MAXIMUM
.030(0.75)
.061 ( 1 .55 )
0
.085(2.15)
--II ..
.
1 1 2 (,2 . 85 )
030(0.75)
MAXIMUM
.091 ( 2 . 3 I
.091 (2.3 I
BSC
BSC
LEAD CODE:
1)
2)
3)
4)
.21 1 ( 5 . 35)
.222(5.65)
BASE
COLLECTOR
EMITTER
COLLECTOR
81
Central™
Semiconductor Corp.
CJD47
CJD50
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD47,
CJD50 types are NPN Silicon Power
Transistors manufactured in a surface mount
package designed for high voltage applications
such as power supplies and other switching
applications.
DPAK CASE
MAXIMUM RATINGS (TC=25 0 C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation (TC=25 0 C)
Power Dissipation (TA=25 0 C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
CJD47
350
250
CJD50
500
400
5.0
1.0
2.0
600
15
1.56
W
W
°c
°c/w
°c/w
-65 to +150
8.33
80.1
TJ,Tstg
8JC
8JA
UNITS
V
V
V
A
A
mA
ELECTRICAL CHARACTERISTICS (TC=25 0 C unless otherwise noted)
SYMBOL
ICEO
ICEO
ICES
ICES
lEBO
BVCEO
BVCEO
VCE(SAT)
VBE(ON)
hFE
TEST CONDITIONS
VCE=150V (CJD47)
VCE=300V (CJD50)
VCE=350V (CJD47)
VCE=500V (CJD50)
VEB=5.0V
IC=30mA (CJD47)
IC=30mA (CJD50)
IC=1.0A, IB=200mA
VCE=10V,IC=1.0A
VCE=10V,IC=300mA
MIN
MAX
200
200
100
100
1.0
250
400
30
82
1.0
1.5
150
UNITS
~A
IlA
IlA
IlA
mA
V
V
V
V
SYMBOL
TEST CONDITIONS
hFE
fT
hfe
VCE=10V,IC=1.0A
VCE=10V, IC=200mA, f=2.0MHz
VCE=10V, IC=200mA, f=1.0kHz
MIN
10
10
25
MAX
UNITS
MHz
All dimensions in inches (mm).
TOP
VIEW
.248(6.30)
.268(6.80)
.085(2.15)
.096(2.45)
.203(5.15)
.215(5.45)
.016(0.40)
.024(0.60)
.053(1.35)
.065(1.65)
4
t
.145(3.69)
MINIMUM
____
____
~_L
_________
j
.211 ( 5 . 35)
.222(5.65)
~
~"----r--01~,,2,,----------,---,3---' - - - t - - -
1J
.033(0.85)
.061(1. 55
~
.085(2.15)
. 112 ( 2 . 85)
+
T
.016(0.40)
.024(0.60)
.037(0.95)
I•. 030(0.75)
MAXIMUM
MAXIMUM
.030(0.75)
.061 ( 1 .55)
.091
2.3
sse
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
83
~
..
Cantral™
CJD112 NPN
CJD117 PNP
Semiconductor Corll.
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
DESCRIPTION:
TheCENTRALSEMICONDUCTORCJD112,
CJD117 types are Complementary Silicon
Power Darlington Transistors manufactured
in a surface mount package designed for low
speed switching and amplifier applications.
DPAK CASE
MAXIMUM RATINGS (TC=25 0 C)
VCSO
VCEO
VESO
IC
100
100
UNITS
V
V
5.0
V
2.0
A
ICM
IS
PD
PD
4.0
A
50
20
1.75
mA
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Continuous Collector Current
Peak Collector Current
Sase Current
Power Dissipation (TC=250 C)
Power Dissipation (TA=25 0 C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
W
W
-65 to +150
6.25
71.4
°c
°CIW
°CIW
ELECTRICAL CHARACTERISTICS (TC=25 0 C unless otherwise noted)
SYMBOL
ICEO
ICEV
ICEV
ICSO
TEST CONDITIONS
VCE=50V
MIN
VCE=80V, VSE(off)=1.5V
VCE=80V, VSE(off)=1.5V, TC=125 C
VCS=80V
VCS=100V
O
MAX
20
10
UNITS
~A
~A
500
10
~A
20
~A
2.0
J.lA
mA
100
V
VCE(SAT)
VES=5.0V
IC=30mA
IC=2.0A, IS=8.0mA
2.0
V
VCE(SAT)
IC=4.0A, IS=40mA
3.0
V
VSE(SAT)
IC=4.0A, IS=40mA
4.0
V
ICSO
IESO
SVCEO
84
SYMBOL
TEST CONDITIONS
VSE(ON)
hFE
VCE=3.0V,IC=0.5A
500
VCE=3.0V,IC=2.0A
VCE=3.0V,IC=4.0A
1000
200
hFE
hFE
fT
MIN
MAX
2.8
VCE=3.0V,IC=2.0A
UNITS
V
12000
25
VCE=10V, IC=750mA, f=1.0MHz
MHz
Cob
VCS=10V, IE=O, f=0.1MHz (CJD112)
100
pF
Cob
VCS=10V, IE=O, f=0.1MHz (CJD117)
200
pF
All dimensions in inches (mm).
TOP
.248(6.30)
.268(6.80)
r
.085(2.15)
.096(2.45)
.016(0.40)
.024(0.60)
VIEW
.053(1.35)
.065(1.65)
f
r
.145(3.69)
MINIMUM
_ _ _ _~_ _ _ _~L _ _ _ _ _ _ _ _ _
.033(0.85)
.061(1. 55
l
T
j
.21 1 ( 5 . 35)
.222(5.65)
~
~ ~1_,.,2--,------,3--,--' - - . . . . J . - - -
l
.085(2.15)
. 1 12 ( 2 . 85)
.030(0.Y
.049(1.25)
.016(0.40)
.024(0.60)
.037(0.95)
+
I_.030(0.75)
MAXIMUM
MAXIMUM
.030(0.75)
.061 ( 1 .55)
.091
2.3
ssc
LEAD CODE:
1)
2)
3)
4)
SASE
COLLECTOR
EMITTER
COLLECTOR
85
.091
2. 3
ssc
~
..
Central™
CJD122 NPN
CJD127 PNP
Samlconductor Corp.
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD122,
CJD127 types are Complementary Silicon
Power Darlington Transistors manufactured
in a surface mount package designed for low
speed switching and amplifier applications.
DPAKCASE
MAXIMUM RATINGS (TC=250C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation (TC=250C)
Power Dissipation (TA=250C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
UNITS
V
V
V
A
A
mA
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
100
100
5.0
8.0
16
120
20
1.75
TJ,Tstg
E>JC
E>JA
-65 to +150
6.25
71.4
W
W
°c
°C/w
°C/w
ELECTRICAL CHARACTERISTICS (TC=250C unless otherwise noted)
SYMBOL
ICEO
ICEV
ICEV
ICBO
lEBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
TEST CONDITIONS
MIN
VCE=50V
VCE=100V, VBE(off)=1.5V
VCE=100V, VBE(off)=1.5V, TC=1250C
VCB=100V
VEB=5.0V
IC=30mA
100
IC=4.0A,IB=16mA
IC=8.0A, IB=80mA
IC=8.0A, IB=80mA
86
MAX
10
10
500
10
2.0
2.0
4.0
4.5
UNITS
f.IA
f.IA
f.lA
f.IA
mA
V
V
V
V
SYMBOL
TEST CONDITIONS
VBE(ON)
hFE
hFE
fT
VCE=4.0V. IC=4.0A
1000
VCE=4.0V. IC=4.0A
100
VCE=4.0V. IC=8.0A
4.0
VCE=4.0V. IC=3.0A. f=1.0MHz
VCB=10V. IE=O. f=1.0MHz (CJD122)
VCB=10V. IE=O. f=1.0MHz (CJD127)
VCE=4.0V. IC=3.0A. f=1.0kHz
Cob
Cob
hfe
UNITS
V
MAX
2.8
12000
MIN
MHz
pF
pF
200
300
300
All dimensions in inches (mm).
TOP
VIEW
.248(6.30)
.268(6.80)
.085(2.15)
.096(2.45)
.203(5.15)
.215(5.45)
.016(0.40)
.024(0.60)
.053(1.35)
.065(1.65)
4
i
t
.145(3.69)
MINIMUM
____
.033(0.85)
.061(1. 55
l
T
~
____
~L
_________
2
l
~
.211 (5.35)
.222(5.65)
j
3
.085(2.15)
. 1 12 ( 2 . 85)
.030(0.7T
.049(1.25)
.016(0.40)
.024(0.60)
.037(0.95)
+
I•. 030(0.75)
MAXIMUM
MAXIMUM
.030(0.75)
.061 ( 1 .55)
.091 2.3
BSC
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITIER
COLLECTOR
87
.091 2.3
BSC
Cantral™
CJD200 NPN
CJD210 PNP
Semiconductor Corll.
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD200,
CJD210 types are Complementary Silicon
Power Transistors manufactured in a surface
mount package designed for high current
amplifier applications.
DPAKCASE
MAXIMUM RATINGS (TC=250C)
UNITS
V
V
V
A
A
A
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation (TC=25°C)
Power Dissipation (TA=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
40
25
8.0
5.0
10
1.0
12.5
1.4
VCSO
VCEO
VESO
IC
ICM
IS
PD
PD
W
W
-65 to +150
10
89.3
°c
°C/w
°C/w
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
ICSO
ICSO
IESO
SVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(ON)
hFE
TEST CONDITIONS
VCS=40V
VCS=40V, TC=125OC
VES=8.0V
IC=10mA
IC=500mA, IS=50mA
IC=2.0A, IS=200mA
IC=5.0A, IS=1.0A
IC=5.0A, IS=1.0A
VCE=1.0V, IC=2.0A
VCE=1.0V, IC=500mA
MIN
MAX
100
100
100
UNITS
nA
IJA
nA
V
V
V
V
V
V
25
0.3
0.75
1.8
2.5
1.6
70
88
--
---
-
--
SYMBOL
hFE
hFE
fT
Cob
Cob
TEST CONDITIONS
MIN
45
VCE=1.0V,IC=2.0A
10
VCE=2.0V,IC=5.0A
65
VCE=10V, IC=100mA, f=10MHz
VCB=1 OV, IE=O, f=0.1 MHz (CJD200)
VCB=10V, IE=O, f=0.1MHz (CJD210)
MAX
180
80
120
All dimensions in inches (mm).
TOP
r
.085(2.15)
.096(2.45)
.016(0.40)
.024(0.60)
VIEW
.248(6.30)
.268(6.80)
I
I
.203(5.15)J
.215(5.45)
(
.145(f3 . 69 )
I
.053(1.35)
• . 065(1.65)
'I
4
1
:
MINiMUM
•
.033(0.85)
.081(1. 55
l
T
.016(0.40)
.024(0.60)
.030(0.75)
.061 ( 1 .55 )
.211(5.35)
.222(5.65)
~'--,-c-1,...--..,-2,,-_-_-,-3r
---r U-JW U
l
~l
.030(0
7~
.049(1
25)
.037(095)
D
l
P
--II ..
----tt--~~~
112({.85)
030(0.75)
MAXIMUM
MAXIMUM
.091
2.3
esc
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
89
.091
2.3
esc
UNITS
MHz
pF
pF
,.
Central™
CJD340 NPN
CJD350 PNP
Semlconducto. CO....
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD340,
CJD350 types are Complementary Silicon
Power Transistors manufactured in a surface
mount package designed for high voltage
general purpose applications.
DPAKCASE
MAXIMUM RATINGS (T C=25°C)
UNITS
V
V
V
mA
mA
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation (TC=25 0 C)
Power Dissipation (TA=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
300
300
3.0
500
750
15
1.56
VCBO
VCEO
VEBO
IC
ICM
PD
PD
W
W
-65 to +150
8.33
80.1
°c
°CIW
°CIW
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
ICBO
lEBO
BVCEO
hFE
TEST CONDITIONS
VCB=300V
VEB=3.0V
IC=1.0mA
VCE=10V,IC=50mA
MIN
300
30
90
MAX
100
100
240
UNITS
~
JlA
V
All dimensions in inches (mm).
TOP
VIEW
.248(6.30)
.268(6.80)
.085(2.15)
.096(2.45)
.203(5.15)
.215(5.45)
.016(0.40)
.024(0.60)
.053(1.35)
.065(1.65)
4
t
.145(3.69)
MINIMUM
.033(0.85)
. 21 1 ( 5 . 35)
.222(5.65)
--~-~-T~;-_-_--~2~--_-~~~
____jr-_
.061(1.55ll
.085(2.15)
-:-112T2-:a5)
+
T
.016(0.40)
.024(0.60)
.037(0.95)
I.. 030(0.75)
MAXIMUM
MAXIMUM
.030(0.75)
.061 ( 1 .55)
.091
2.3
BSC
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
91
~
..
Central™
Semiconductor Corp.
CJD2955 PNP
CJD3055 NPN
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CJD2955, CJD3055 types are Complementary
Silicon Power Transistors manufactured by
the epitaxial base process, mounted in a
surface mount package designed for high
current amplifier and switching applications.
DPAKCASE
MAXIMUM RATINGS (TC=25 0 C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation (T C=25oC)
Power Dissipation (T A=25 0 C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
UNITS
V
V
V
A
A
VCBO
VCEO
VEBO
IC
IB
PD
PD
70
60
5.0
10
6.0
20
1.75
TJ,T stg
0JC
0JA
-65 to +150
6.25
71.4
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T C=25°C unless otherwise noted)
SYMBOL
ICEO
ICEV
ICEV
ICBO
ICBO
lEBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
fT
TEST CONDITIONS
VCE=30V
VCE=70V, VBE(off)=1.5V
VCE=70V, VBE(off)=1.5V, TC=150 oC
VCB=70V
VCB=70V, TC=150 oC
VEB=5.0V
IC=30mA
IC=4.0A, IB=400mA
IC=10A,IB=3.3A
VCE=4.0V, IC=4.0A
VCE=4.0V,IC=4.0A
VCE=4.0V,IC=10A
VCE=10V, IC=500mA, f=1.0MHz
92
MIN
MAX
50
20
2.0
20
2.0
500
60
20
5.0
2.0
1.1
8.0
1.8
100
UNITS
!J.A
!J.A
mA
!J.A
mA
!J.A
V
V
V
V
MHz
All dimensions in inches (mm).
TOP
.085(2.15)
.096(2.45)
.016(0.40)
.024(0.60)
VIEW
.248(6.30)
,268(6.80)
r
1 .203(5.15)1
1 .215(5,45)
(
:
f
,145(3,69)
I
4
:
I
MINIMUM:
:
----~~----r~---------~
,211 ( 5 , 35)
.222(5.65)
~~1~2~~3~ ____jr-_
:r --UJl--11 ..
.033(0.85)
.061 ( 1 . 5 5 l l
F
T
,053(1.35)
+ ,065(1.65)
,030(0.75)
L.,-
,049(1.25)
.016(0.40)
.024(0.60)
,037(0,95)
F
,085(2,15)
.112(2.85)
+.
!-:-
030(0.75)
MAXIMUM
MAXIMUM
.030(0,75)
.061 ( 1 .55)
.09
1~2
,3)
Bse
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
93
,091 (2,3 )
Bse
Central™
Semlconducto. CO....
CJD13003
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The
CENTRAL SEMICONDUCTOR
CJD13003 type is an NPN Silicon Power
Transistors manufactured in a surface mount
package designed for high voltage, high speed
power switching inductive applications.
DPAKCASE
MAXIMUM RATINGS (TC=25 0 C)
SYMBOL
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Sase Current
Continuous Emitter Current
Peak Emitter Current
Power Dissipation (TC=25°C)
Power Dissipation (TA=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
UNITS
V
V
V
A
A
mA
A
A
A
W
W
700
400
9.0
1.5
3.0
750
1.5
2.25
4.5
15
1.56
VCEV
VCEO
VEBO
IC
ICM
IS
ISM
IE
IEM
PD
PD
-65 to +150
8.33
80.1
°c
°CIW
°CIW
ELECTRICAL CHARACTERISTICS (TC=25 0 C unless otherwise noted)
SYMBOL
ICEV
ICEV
lEBO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
TEST CONDITIONS
VCE=700V, VSE(off)=1.5V
VCE=700V, VBE(off)=1.5V, TC=100oC
VEB=9.0V
IC=10mA
IC=500mA,IB=100mA
IC=1.0A,IB=250mA
IC=1.5A, IB=500mA
IC=1.0A, IB=250mA, T C=1 OO°C
94
MIN
TYP
MAX
100
2.0
1.0
400
0.5
1.0
3.0
1.0
UNITS
~
mA
mA
V
V
V
V
V
TEST CONDITIONS
IC=500mA, IS=100mA
IC=1.0A, IS=250mA
IC=1.0A, IS=250mA, T C=1 OOoC
VCE=2.0V,IC=500mA
VCE=2.0V,IC=1.0A
VCE=10V, IC=100mA, f=1.0MHz
VCS=10V, IE=O, f=0.1MHz
VCC=125V, IC=1.0A, IS1=IS2=200mA
VCC=125V, IC=1.0A, IS1=IS2=200mA
VCC=125V, IC=1.0A, IS1=IS2=200mA
VCC=125V, IC=1.0A, IS1=IS2=200mA
SYMBOL
VSE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
fT
Cob
td
tr
ts
tf
MIN
TYP
8.0
5.0
4.0
MAX
1.0
1.2
1.1
40
25
MHz
20
0.1
1.0
4.0
0.7
(1)
(1)
(1)
(1)
(1) tp=25Ils, Duty Cycle:=;1 %
All dimensions in inches (mm).
TOP
\
.203(5.15)\
1. 215 (5.45)
.016(0.40)
.024(0.60)
(
f
.145(3.69)
MINiMUM
:I
.016(0.40)
.024(0.60)
.030(0.75)
.061 ( 1 .55 )
~l
.030(0.75)
.049(1.25)
.053(1.35)
+.065(1.65)
4
f
I
I
I
I
I
I
I
I
I
I
I _ _ _ _ _ _ _ _ _ JI
L
----.L 1
.033(0.85)
.061(1.55jJ
T
V I EW
.248(6.30)
.268(6.80)
.085(2.15)
.096(2.45)
2
l
_.LJ
F
j
3
.085(2.15)
F
. " " ,* .• .,
~
030(0.75!
MAXIMUM
MAXIMUM
.091 (2.3)
BSC
LEAD CODE:
1)
2)
3)
4)
SASE
COLLECTOR
EMITTER
COLLECTOR
95
r
.21 1 ( 5 . 35)
.222(5.65)
--11 ..
.037(0.95)
UNITS
V
V
V
.091 ( 2.3 )
BSC
pF
I-ls
I-ls
I-ls
I-ls
Central™
CLL457A
CLL459A
Semiconductor Corp.
LOW LEAKAGE
SILICON DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CLL457A, CLL459A types are silicon planar
diodes, manufactured in a hermetically sealed
glass surface mount package, designed for
low leakage applications.
Marking Code: Cathode band.
SOD-80 CASE
MAXIMUM RATINGS: (TA=25 0 C)
SYMBOL
Peak Repetitive Reverse Voltage
Peak Working Reverse Voltage
Average Forward Current
Forward Steady-State Current
Peak Forward Surge Current (1.0Jls pulse)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VRRM
VRWM
CLL457A
70
60
10
IF
IFSM
PD
TJ,Tstg
8JA
CLL459A
200
175
200
500
4.0
500
-65 to +200
350
UNITS
V
V
mA
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25 0 C unless otherwise noted)
SYMBOL
BVR
IR
IR
VF
CT
CLL457A
MIN
MAX
70
25
5.0
1.0
6.0
TEST CONDITIONS
IR=100JlA
VR=Rated VRWM
VR=Rated VRWM, T A=150 oC
IF=100mA
VR=O, f=1.0MHz
96
CLL459A
MIN
MAX
200
25
5.0
1.0
6.0
UNITS
V
nA
JlA
V
pF
All dimensions in inches (mm).
.130(3.30)
.146(3.71)
r~ ~ :1[1-;------ u--
. 0 1 6 ( 0 . 41)
o:
~ ~; [: :
t.004(0.10)
MAXIMUM
97
Central™
Semlconducto. Co.p.
CLL914
HIGH SPEED
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL914
type is an ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in a hermetically sealed glass surface
mount package, designed for high speed
switching applications.
Marking code: Cathode Band.
SOD-80 CASE
MAXIMUM RATINGS (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 Ilsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
'FSM
PD
TJ,Tstg
8JA
75
100
250
250
4000
1000
500
UNITS
V
V
mA
mA
mA
mA
mW
-65 to +200
350
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
VSR
IR
IR
VF
CT
trr
TEST CONDITIONS
MIN
100
IR=1OOIlA
VR=20V
VR=75V
IF=10mA
VR=O, f=1 MHz
IR=I F=1 OmA, RL =1 oon, Rec. to 1.0mA
98
MAX
25
5.0
1.0
4.0
4.0
UNITS
V
nA
IlA
V
pF
ns
All dimensions in inches (mm).
. 130 ( 3 .30 )
.146(3.71)
. 0 1 6 ( 0 .41 )
o:
r-
~:; (: : ; ~ :il1-;------H-t.004(O.10)
MAXIMUM
R1
99
Central™
CLL2003
Semiconductor Corp.
HIGH VOLTAGE
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL2003
type is a silicon switching diode manufactured
by the epitaxial planar process, designed for
applications requiring high voltage capability.
Marking Code: Cathode band.
~
SOD-80CASE
MAXIMUM RATINGS (TA=25oC)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Average Forward Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 Ils
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
10
IF
IFRM
IFSM
IFSM
Po
UNITS
V
V
rnA
rnA
rnA
rnA
rnA
mW
250
250
200
250
625
4000
1000
500
-65 to +200
350
TJ,Tstg
0JA
°c
°CIW
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
BVR
IR
IR
VF
VF
CT
trr
TEST CONDITIONS
IR=100jlA
VR=200V
VR=200V,TA=150 0 C
IF=100mA
IF=200mA
VR=O, f=1 MHz
IF=IR=30mA, RECOV. TO 3.0mA,
RL=100n
100
MIN
250
MAX
100
100
1.00
1.25
5.0
50
UNITS
V
nA
jlA
V
V
pF
ns
All dimensions in inches (mm).
. 130 ( 3 . 30)
. 146 ( 3 . 71)
. 0 1 6 ( 0 . 41)
~
0: ~~;~: :~~ ~ffliU----
Hu-
t.004(0.10)
MAXIMUM
R1
101
Cantral™
Semiconductor Carll.
CLL3595
LOW LEAKAGE
SILICON DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CLL3595 type is an epitaxial planar silicon
diode, manufactured in a hermetically sealed
glass surface mount package, designed for
low leakage, high conductance applications.
Marking Code: Cathode Band.
SOD-80 CASE
MAXIMUM RATINGS: (TA=250C)
SYMBOL
Peak Repetitive Reverse Voltage
Peak Working Reverse Voltage
Average Forward Current
Forward Steady-State Current
Recurrent Peak Forward Current
Peak Forward Surge Current (1.05 pulse)
Peak Forward Surge Current (1.0I1s pulse)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VRRM
VRWM
10
IF
if
IFSM
IFSM
PD
150
125
150
225
600
500
4.0
500
TJ,Tstg
0JA
-65 to +200
350
UNITS
V
V
mA
mA
mA
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=250C unless otherwise noted)
SYMBOL
TEST CONDITIONS
BVR
IR
IR
IR
IR
VF
VF
VF
VF
VF
VF
IR= 100I1A
VR=125V
VR=125V,TA=1250C
VR=125V,TA=150oC
VR=30V, TA=1250C
IF=1.0mA
IF=5.0mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
MIN
150
0.52
0.60
0.65
0.75
0.79
0.83
102
MAX
1.0
500
3.0
300
0.68
0.75
0.80
0.88
0.92
1.00
UNITS
V
nA
nA
I1A
nA
V
V
V
V
V
V
SYMBOL
CT
trr
TEST CONDITIONS
VR=O, f=1.0MHz
VR=3.5V, If=10mA, RL =1.0kQ
MIN
MAX
UNITS
8.0
pF
3.0
~s
All dimensions in inches (mm).
. 130 ( 3 . 30)
. 146 ( 3 .71 )
. 0 1 6 ( 0 .41 )
o:
r-
~ ~; :: : ; ~ :ft];-u----Hut.004(0.10)
MAXIMUM
103
Central™
CLL4150
Semiconductor Corp.
HIGH SPEED
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL4150
type is an ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in a hermetically sealed glass surface
mount package, designed for high speed
switching applications.
Marking Code: Cathode Band.
SOD-80 CASE
MAXIMUM RATINGS (T A=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 Ilsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
50
50
300
600
4000
1000
500
TJ,T stg
8JA
-65 to +200
350
UNITS
V
V
mA
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
BVR
IR
VF
VF
VF
VF
VF
CT
trr
TEST CONDITIONS
IR=5.0IlA
VR=50V
IF=1.0mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
VR=O, f=1 MHz
IR=IF=10mA, RL=1 oon, Rec. to 1.0mA
104
MIN
75
0.54
0.66
0.76
0.82
0.87
MAX
100
0.62
0.74
0.86
0.92
1.0
4.0
4.0
UNITS
V
nA
V
V
V
V
V
pF
ns
All dimensions in inches (mm).
. 130 ( 3 . 30)
.146(3.71)
. 016 ( 0 .41 )
0: ~:;:: :~~
r-
:[li---- Ht.004(0.10)
MAXIMUM
R1
105
Central™
CLL4448
Semiconductor Cor...
HIGH SPEED
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL4448
type is a ultra-high speed silicon switching
diode manufactured by the epitaxial planar
process, in a hermetically sealed glass surface
mount package, designed for high speed
switching applications.
Marking Code: Cathode Band.
SOD-SO CASE
MAXIMUM RATINGS (TA=250C)
SYMBOL
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 Ilsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VR
VRRM
IF
IFRM
IFSM
IFSM
75
100
250
250
4000
1000
500
TJ,Tstg
8JA
-65 to +200
350
Po
UNITS
V
V
mA
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
VSR
VSR
IR
VF
VF
CT
trr
TEST CONDITIONS
IR=5.0IlA
IR= 1OOIlA
VR=20V
IF=5.0mA
IF=100mA
VR=O, f=1 MHz
IR=IF=10mA, RL=1
MIN
75
100
0.62
oon, Rec. to 1.0mA
106
MAX
25
0.72
1.0
4.0
4.0
UNITS
V
V
nA
V
V
pF
ns
All dimensions in inches (mm).
.130(3.30)
.146(3.71)
. 016 ( 0 . 41)
r-
0: ~:;:: :~~ ~[I*n
____ H-
t.004(0.10)
MAXIMUM
R1
107
Central™
Semlcanducta. Ca'il.
CLL4625
THRU
CLL4627
500mW LOW NOISE ZENER DIODE
5% TOLERANCE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL4625
Series Silicon Zener Diode is a high quality
voltage regulator designed for low leakage,
low current and low noise applications.
Marking Code: Cathode Band
SOD-80 CASE
ABSOLUTE MAXIMUM RATINGS
Power Dissipation (@ T A=25°C)
Operating and Storage Temperature
SYMBOL
PD
TJ,Tstg
UNITS
mW
°C
500
-65 to +200
ELECTRICAL CHARACTERISTICS
(TA=25°C) VF=1.0V MAX @ IF = 200mA FOR ALL TYPES.
CLL4626
5.6
250
CLL4627
6.2
250
1400
10
108
4.0
50
4.0
All dimensions in inches (mm).
.130(3.30)
.146(3.71)
. 0 1 6 ( 0 .41 )
(» •
r-
~:; ~: ~ ~ ~[liu-----H•
t.004(0.10)
MAXIMUM
R1
109
Central™
Semlconducto, Co,p.
CLL4689
THRU
CLL4714
500mW LOW LEVEL ZENER DIODE
5% TOLERANCE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL4689
Series Silicon Zener Diode is a high quality voltage
regulator designed for applications requiring an
extremely low operating current and low leakage.
Marking Code: Cathode Band
SOD-80CASE
ABSOLUTE MAXIMUM RATINGS
Power Dissipation (@ T A = 50 oC)
Operating and Storage Temperature
ELECTRICAL CHARACTERISTICS
(TA=250 C) VF=1.5V MAX @ IF=100mA FOR ALL TYPES
SYMBOL
PD
TJ,TSTG
* L1 VZ=VZ@100IlAMINUSVZ @ 10!!A.
110
500
-65 to +200
UNITS
mW
°C
All dimensions in inches (mm).
. 130 ( 3 .30 )
. 146 ( 3 .71 )
. 0 1 6 ( 0 .41 )
R1
111
CLL4729A
THRU
CLL4764A
1.0W ZENER DIODE
5% TOLERANCE
Cantral™
Semlconducto. co.p.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL4729A
Series Silicon Zener Diode is a high quality voltage
regulator for use in surface mount industrial,
commercial, entertainment and computer
applications.
Marking Code: Cathode Band
MELFCASE
ABSOLUTE MAXIMUM RATINGS
SYMBOL
UNITS
Power Dissipation
PD
1.0
W
TJ,Tstg
-65 to +200
°C
Operating and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA=25°C), VF=1.2MAX @ I = 200mA FOR ALL TYPES.
All dimensions in inches (mm).
~
.014(0.36)
.022(0.56)
Ia:
r-
.185(4.70)
.209(5.31)"
:~:\~:~: ~~'------'-----'-B-_-~---nHn-
R1
113
Central™
CLL5226B
THRU
CLL5257B
Semlcanductar Carp.
DESCRIPTION:
500 mW ZENER DIODE
5% TOLERANCE
The CENTRAL SEMICONDUCTOR CLL52268
Series Silicon Zener Diode is a high quality voltage
regulator for use in industrial, commercial,
entertainment and computer applications. Higher
voltage devices are available on special order.
Marking Code: Cathode Band
500-80 CASE
ABSOLUTE MAXIMUM RATINGS
Power Dissipation (@ T A = 500 C)
Operating and Storage Temperature
500
-65 to +200
FOR ALL TYPES.
114
UNITS
mW
°C
All dimensions in inches (mm).
. 130 ( 3 . 30)
.146(3.71)
. 016 ( 0 .41 )
f
.05 1 ( 1 .30 )
" . 067 ( 1 .70 )
*
R1
115
Central™
CLLR1 SERIES
Semiconductor Corp.
GENERAL PURPOSE RECTIFIER
1.0 AMP, 200 THRU 1,000 VOLTS
FEATURES:
• LOW COST
• HIGH RELIABILITY
• SPECIAL SELECTIONS AVAILABLE
• SUPERIOR LOT TO LOT CONSISTENCY
• GLASS PASSIVATED INTERNAL
CONSTRUCTION
MELFCASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1.0 amp leadless epoxy silicon rectifier is a high quality, well
constructed, highly reliable component designed for use in all types of commercial, industrial, entertainment,
computer, and automotive applications. Higher voltage devices, special selections, fast recovery, ultra
fast recovery, and Schottky devices are also available.
MAXIMUM RATINGS:
(T A=250C unless otherwise noted)
CLLR1
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (T L=800C)
Peak Forward Surge Current (8.3ms)
Operating and Storage
Junction Temperature
ELECTRICAL CHARACTERISTICS:
CLLR1
~ ~
SYMBOL
200
200
140
VRRM
VR
VR(RMS)
10
IFSM
CLLR1
CLLR1
----..:0.6..... --.:10..
400
400
280
1.0
30
600
600
420
UNITS
V
V
V
A
A
°c
-65 to +175
TJ,Tstg
1000
1000
700
(TA=25 0 C unless otherwise noted)
TEST CONDITIONS
IF=Rated 10
VR=Rated VRRM
VR=Rated VRRM, TA=125 0 C
116
MIN
MAX
1.1
10
50
UNITS
V
~A
~A
All dimensions in inches (mm).
...
.014(0.36)
.022(0.56)
o
r-
.185(4.70)
.209(5.31)
~~: \~ ~:: f~uH---~---Hu-
Marking Codes:
ceNTRAL TYPE NO.
"
" BAND 1*
BAND 2
CLLR1-02
WHITE
ORANGE
CLLR1-04
WHITE
YELLOW
CLLR1-06
WHITE
GREEN
CLLRHO
WHITE
VIOLET
* Cathode Band
R1
117
Central™
CLLR1 F SERIES
Semiconductor Ca....
FAST RECOVERY RECTIFIER
1.0AMP, 200 THRU 1,000 VOLT5
FEATURES:
• LOW COST
• HIGH RELIABILITY
• GLASS PASSIVATED INTERNAL
CONSTRUCTION
• SPECIAL SELECTION AVAILABLE
• SUPERIOR LOT TO LOT CONSISTENCY
• SWITCHING SPEED AS LOW AS 150ns
MELF CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1.0 amp lead less epoxy fast recovery silicon rectifier is a high
quality, well constructed, high reliable component designed for use in all types of commercial,
industrial, entertainment, computer, and automotive applications. Higher voltage devices, special
selections, general purpose, and ultra fast recovery and Schottky devices are available upon request.
MAXIMUM RATINGS: (TA = 25°C unless otherwise noted)
SYMBOL CLLR1F-02
Peak Repeatitive Reverse Voltage
200
VRRM
DC Blocking Voltage
200
VR
RMS Reverse Voltage
140
VR(RMS)
Average Forward Current (T L=80°C)
10
Peak Forward Surge Current (8.3ms)
IFSM
Operating and Storage
Junction Temperature
TJ,Tstg
CLLR1F-06
600
600
420
1.0
CLLR1F-10
1000
1000
700
30
UNITS
V
V
V
A
A
-65 to +175
°C
ELECTRICAL CHARACTERISTCS (TA = 25°C unless otherwise noted)
SYMBOL
VF
IR
IR
trr
trr
trr
TEST CONDITIONS
IF=Rated 10
VR=Rated VRRM
VR=Rated VRRM, T A=1250C
IF=0.5A, IR=1.0A, Recover to 0.25A (CLLR1 F-02)
IF=0.5A, IR=1.0A, Recover to 0.25A (CLLR1 F-06)
IF=0.5A, IR=1.0A Recover to 0.25A (CLLR1 F-10)
118
MIN
MAX
1.3
5.0
100
150
250
500
UNITS
V
!-LA
!-LA
ns
ns
ns
All dimensions in inches (mm).
. 014 ( 0 . 36)
.022(0.56)'"
o:
r-
.185(4.70)
. 209 ( 5 .31 )
H-
~ ~: (~ ~ ~ ~,.--,------,-----tl---~--: :
Marking Codes:
CLLR1F-02
RED
ORANGE
CLLR1F-06
RED
GREEN
CLLR1F-10
RED
VIOLET
* Cathode Band
R1
119
Central™
Semiconductor Corp.
CLLR1 U SERIES
FEATURES
ULTRA FAST RECTIFIER
1.0 AMP, 100 THRU 400 VOLTS
• LOW COST
• HIGH RELIABILITY
• GLASS PASSIVATED INTERNAL
CONSTRUCTION
• SPECIAL SELECTIONS AVAILABLE
• SUPERIOR LOT TO LOT CONSISTENCY
• SWITCHING SPEED: 50 ns MAX
MELFCASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1.0 amp lead less epoxy ultra fast recovery rectifier is a high quality,
well constructed, highly reliable component designed for use in all types of commercial, industrial,
entertainment, computer, and automotive applications. Higher voltage devices, special selections,
general purpose, fast recovery and Schottky devices are available upon request.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (T L=80 0C)
Peak Forward Surge Current (8.3ms)
Operating and Storage
Junction Temperature
10
IFSM
CLLR1U-02 CLLR1U-04 UNITS
400
200
V
400
200
V
140
280
V
1.0
A
A
30
TJ,Tstg
-65 to +175
SYMBOL CLLR1 U-01
100
VRRM
100
VR
70
VR(RMS)
°C
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
VF
VF
IR
IR
trr
TEST CONDITIONS
IF=Rated 10 (CLLR1 U-01, CLLR1 U-02)
IF=Rated 10 (CLLR1 U-04)
VR=Rated VRRM
VR=Rated VRRM , T A=1250C
IF=0.5A, IR=1.0A, Recover to 0.25A (All types)
120
MIN
MAX
1.0
1.25
5.0
100
50
UNITS
V
V
/J. A
/J.A
ns
All dimensions in inches (mm).
.014(0.36)
.022(0.56) ...
r-
.185(4.70)
.209(5.31)
--'"
R-
'" :~ ~: (~ :~: :~'---'---'-'--uH---~---
Marking Codes:
CLLR1U-01
GREEN
RED
CLLR1U-02
GREEN
ORANGE
CLLR1U-04
GREEN
YELLOW
* Cathode Band
R1
121
Central™
Semiconductor Corp.
CLLSH1 SERIES
SCHOTTKY RECTIFIER
1.0 AMP, 20 THRU 60 VOLTS
FEATURES
e LOW COST
e HIGH RELIABILITY
EXTREMELY LOW FORWARD VOLTAGE
DROP
e SPECIAL SELECTIONS AVAILABLE
e
e
SUPERIOR LOT TO LOT CONSISTENCY
MELFCASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1.0 amp leadless epoxy Schottky rectifier is a high quality, well
constructed, highly reliable component designed for use in all types of commercial, industrial, entertainment,
computer and automotive applications. Higher voltage devices, special selections, general purpose, fast
recovery and ultra fast recovery devices are available upon request.
MAXIMUM RATINGS (TA=25 0 C unless otherwise noted)
SYMBOL CLLSH1-20
Peak Repetitive Reverse Voltage
20
VRRM
DC Blocking Voltage
20
VR
RMS Reverse Voltage
14
VR(RMS)
Average Forward Current (T L=800C)
10
Peak Forward Surge Current (8.3ms)
IFSM
Operating and Storage
Junction Temperature
TJ,Tstg
CLLSH1-40
40
40
28
1.0
30
CLLSH1-60 UNITS
V
60
V
60
42
V
A
A
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA=250C) unless otherwise noted)
SYMBOL
VF
VF
IR
IR
TEST CONDITIONS
IF=Rated 10 (CLLSH1-20, CLLSH1-40)
IF=Rated 10 (CLLSH1-60)
VR=Rated VRRM
VR=Rated VRRM , T A=1 OOoC
122
MIN
MAX
0.50
0.70
500
10
UNITS
V
V
A
Il
mA
All dimensions in inches (mm).
.014(0.36)--.
.022(0.56)
0:
r-
. 185 ( 4 . 70)
.209(5.31)
r
~~: \~:: :~~+I---~---R-
Marking Codes:
CLLSH1-20
ORANGE
GRAY
CLLSH1-40
ORANGE
ORANGE
CLLSH1-60
ORANGE
GREEN
* Cathode Band
R1
123
Cantral™
Semiconductor Corp.
CMDSH-3
SUPER-MINI
SCHOTTKY DIODE
mini
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMDSH-3 type is a Silicon Schottky Diode,
manufactured in a super-mini surface mount
package, designed for fast switching
applications requiring a low forward voltage
drop.
Marking Code is AB.
-
SOD-323 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
Average Forward Current
UNITS
VRRM
10
Forward Surge Current, tp=1 0 ms
Power Dissipation
IFSM
Po
30
V
100
mA
1.0
A
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
-65 to +150
500
8JA
°C
°CIW
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
BVR
IF= 1OOIlA
IF=2.0mA
IF=15mA
IF=100mA
VR=25V
VR=10V, f=1.0 MHz
30
VF
VF
VF
IR
CT
TYP
UNIT
V
0.30
V
0.36
V
7.0
124
MAX
0.55
V
15
IlA
pF
All dimensions in inches (mm).
TOP VIEW
i
1
T
. 0 1 0 ( 0 . 25 )
.014(0.35)
.045(1.15)
L.-~
.053(1.35)
.11_ __
_ _ _ _ _ _---' _ _ _ _ _
.096(2.45)
.108(2.75)
I~
.063(1.60)
.071(1.80)
~I
.031(0.80)
.039(1.00)
l
To
02 (0.05)
.010(0.25)
1.004(0.10)
MAXIMUM
125
Cantral™
CMDZ2V4
THRU
CMDZ47
Semiconductor Corll.
SUPER-MINI ZENER DIODE
2.4 VOLTS THRU 47 VOLTS
250mW, 5% TOLERANCE
mini
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMDZ2V4 Series Silicon Zener Diode is a high
quality voltage regulator, manufactured in a
super-mini surface mount package, designed
for use in industrial, commercial, entertainment
and computer applications.
-
SOD-323 CASE
ABSOLUTE MAXIMUM RATINGS:
Power Dissipation (@TA=25°C)
Operating and Storage Temperature
Thermal Resistance
SYMBOL
PD
TJ,Tstg
8JA
250
-65 to +150
500
UNIT
mW
°c
°CIW
ELECTRICAL CHARACTERISTICS: (TA=25°C), VF=0.9V MAX @ IF=10mA FOR ALL TYPES.
126
ELECTRICAL CHARACTERISTICS:
[i
~.
:J
CMDZ13(
(TA=250C), VF=O.9V MAX @ IF=10mA FOR ALL TYPES.
IQ:~~,
aHR VOLTAGE
VZ@IZT
MIN
NOM
MAX
IZIf'i
VOLTS
VOLTS
VOLTS
~A
12.35
13
13.65
5.0
MAXIMUM
ZENERIMPEDENCE
ZZT@IZT
;
MAXIMUM
REVERSE
CURRENT
MAXIMUM
ZENER VOLTAGE
TEMPERATURE
COEFFICIENT
IR@VR
ZZK@IZK
n
n
mA
!1A
VOLTS
%f'C
30
170
1.0
0.1
8.0
+0.079
CMDZ15
14.25
15
15.75
5.0
30
200
1.0
0.05
10.5
+0.082
CMDZ16
15.20
16
16.80
5.0
40
200
1.0
0.05
11.2
+0.083
CMDZ18
17.10
18
18.90
5.0
45
225
1.0
0.05
12.6
+0.085
CMDZ20
19.00
20
21.00
5.0
55
225
1.0
0.05
14.0
+0.086
CMDZ22
20.90
22
23.10
5.0
55
250
1.0
0.05
15.4
+0.087
CMDZ24
22.80
24
25.20
5.0
70
250
1.0
0.05
16.8
+0.088
CMDZ27
25.65
27
28.35
2.0
80
300
0.5
0.05
18.9
+0.090
CMDZ30
28.50
30
31.50
2.0 '
80
300
0.5
0.05
21.0
+0.091
CMDZ33
31.35
33
34.65
2.0
80
325
0.5
0.05
23.1
+0.092
CMDZ36
34.20
36
37.80
~.O
90
350
0.5
0.05
25.2
+0.093
CMDZ39
37.05
39
40.95
2.0
130
350
0.5
0.05
27.3
+0.094
CMDZ43
40.85
43
45.15
2.0
150
375
0.5
0.05
30.1
+0.095
CMDZ47
44.65
47
49.35
2.0
170
375
0.5
0.05
32.9
+0.095
All dimensions in inches (mm).
TOP VIEW
1
.045r.15)
T
.053(1.35)
. 0 1 0 ( 0 . 25 ) "-----'-_ _ _ _ _ _-------' _ _ _ _
.014(0.35)
---'l~__
.096(2.45)
.108(2.75)
I~
.063(1.60)
.071(1.80)
~I
-~---..---
.031(0.80)
.039(1.00)
1
T002 (0.05)
t.004(0.10)
.010(0.25)
MAXIMUM
127
Cantral™
CMDZ4678
THRU
CMDZ4714
Semiconductor Carll.
SUPER-MINI
LOW LEVEL ZENER DIODE
1.8 VOLTS THRU 33 VOLTS
250mW 5% TOLERANCE
mini
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMDZ4678 Series Silicon Low Level Zener
Diode is a high quality voltage regulator,
manufactured in a super-mini surface mount
package, designed for applications requiring
an extremely low operating current and low
leakage.
_
SOD-323 CASE
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
Power Dissipation (@TA=25°C)
Operating and Storage Temperature
Thermal Resistance
PD
TJ, T stg
8JA
UNIT
250
-65 to + 150
500
mW
°c
°CAN
ELECTRICAL CHARACTERISTICS: (TA=25°C), VF=1.5V MAX @ IF=100mA FOR ALL TYPES.
CMDZ4679*
1.900
2.0
2.100
CMDZ4680*
2.090
2.2
2.310
50
4.0
100
CMDZ4681*
2.280
2.4
2.520
50
2.0
95.0
CMDZ4682*
2.565
2.7
2.835
50
1.0
90.0
CMDZ4683*
2.850
3.0
3.150
50
0.8
85.0
CMDZ4684*
3.135
3.3
3.465
CMDZ468S*
3.420
3.6
3.780
""2~-0
0.95
75.0
CMDZ4686*
3.705
3.9
4.095
2.0
0.97
70.0
CMDZ4687*
4.085
4.3
2.0
0.99
65.0
CMDZ4688*
4.465
4.7
3.0
0.99
60.0
CMDZ4689*
4.845
110
0.95
80.0
50
10
3.0
0.97
55.0
CMDZ4690*
50
10
4.0
0.96
50.0
CMDZ4691*
50
10
5.0
0.95
45.0
50
10
5.1
0.90
35.0
CMDZ4692*
6.
7.5
7.875
50
10
5.7
0.75
31.8
CMDZ4694*
7.790
8.2
8.610
50
1.0
6.2
0.50
29.0
CMDZ469S*
8.265
8.7
9.135
50
1.0
6.6
0.10
27.4
CMDZ4696*
8.845
9.1
9.555
50
1.0
6.9
0.08
26.2
CMDZ4697*
9.500
10
10.50
50
1.0
7.6
0.10
24.8
CMDZ4693*
* Available on special order only, please consult factory.
** !l.VZ=VZ @ 100~A MINUS Vz @ 10~A
128
ELECTRICAL CHARACTERISTICS: (T A=25°C), VF=1.5V MAX @ IF=100mA FOR ALL TYPES.
~"~~~JV~~ Yo
Cr"I'?'l
ZENER VOLTAGE
itf'lS;t
Vz@IZT
CURRENT
MAXIMUM "
REVERSE LEAKAGE
CURRENT
IR@VR
~ r+i)~i+:ri )i1
n~hi'~I:,!
f
MAXIMUM
VOLTAGE
CHANGE"
I
MAXIMUM
ZENER
CURRENT!
MIN
NOM
MAX
Itt
VOLTS
VOLTS
VOLtS
JJA
JJA
VOLTS
VOLTS
rnA
10.45
11
11.55
50
0.05
8.4
0.11
21.6
CMDZ4699*
11.40
12
12.60
50
0.05
9.1
0.12
20.4
CMDZ4700*
12.35
13
13.65
50
0.05
9.8
0.13
19.0
CMDZ4701*
13.30
14
14.70
50
0.05
10.6
0.14
17.5
CMDZ4702*
14.25
15
15.75
50
0.05
11.4
0.15
16.3
CMDZ4703*
15.20
16
16.80
50
0.05
12.1
0.16
15.4
CMDZ4704*
16.15
17
17.85
50
0.05
12.9
0.17
14.5
CMDZ4705*
17.10
18
18.90
50
0.05
13.6
0.18
13.2
CMDZ4706*
18.05
19
19.95
50
0.05
14.4
0.19
12.5
CMDZ4707*
19.00
20
21.00
50
0.01
15.2
0.20
11.9
CMDZ4708*
20.90
22
23.10
50
0.01
16.7
0.22
10.8
CMDZ4709*
22.80
24
25.20
50
0.01
18.2
0.24
9.9
CMDZ4710*
23.75
25
26.25
50
0.01
19.0
0.25
9.5
CMDZ4711*
25.65
27
28.35
50
0.01
20.4
0.27
8.8
CMDZ4712*
26.60
28
29.40
50
0.01
21.2
0.28
8.5
CMDZ4713*
28.50
30
31.50
50
0.01
22.8
0.30
7.9
CMDZ4714*
31.35
33
34.65
50
0.01
25.0
0.33
7.2
CMDZ4698*
!!Nz
IZM
* Available on special order only, please consult factory.
** t.VZ=VZ @ 100flA MINUS Vz @ 10flA
All dimensions in inches (mm).
TOP VIEW
1
T
. 0 1 0 ( 0 . 25 )
.014(0.35)
.045
~--L
______
~
---'l'---__
).1
.
0 6 3 ( 1 . 6 0
.071(1.80)
L
0 0 4 ( 0 . 10 )
.012(0.30)
~~'031(0'80)
~
'---_--'---'~
ba
U
To
15)
____
.096(2.45)
.108(2.75)
I.. .
r1 .
.053(1.35)
U H
1;
0 2 ( 0 . 05 )
.010(0.25)
.039(1.00)
4 ( 0 . 10 )
MAXIMUM
129
1
I
i
II
Central™
CMOZ5221B
THRU
CMOZ5261B
Semiconductor Corp.
SUPER-MINI ZENER DIODE
2.4 VOLTS THRU 47 VOLTS
250mW, 5% TOLERANCE
mini
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMDZ5221 B Series Silicon Zener Diode is a
high quality voltage regulator, manufactured
in a super-mini surface mount package,
de~signed for use in industrial, commercial,
entertainment and computer applications.
-
SOO-323 CASE
ABSOLUTE MAXIMUM RATINGS:
Power Dissipation (@TA=25°C)
Operating and Storage Temperature
Thermal Resistance
SYMBOL
Po
TJ,Tstg
8JA
250
-65 to +150
500
UNIT
mW
°c
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C), VF=0.9V MAX @ IF=10mA FOR ALL TYPES.
130
ELECTRICAL CHARACTERISTICS: (TA=25°C), VF=O.9V MAX
li;~: TYPE:~:,
Z""'VOlTA""('1':' J ~ ' Vz @ Izr
ClJRI'{FNT
".
~'~;~,
@
'11
ZINIRIMPEJ!ilINCE
•.
Ilijll'I'.;'.
f
IF=10mA FOR ALL TYPES.
MAXIMUM
·;.,'AEVERSE .
CURRE"IT
,
MAXIMUM
, ZINER VOLTAGE
TEMPERATURE
COEFFICIENT
,MIN
NOM
VOLTS
VOLTS
VOLT$
.,*~
Q
Q
mA
p.A
VOLTS
%I"C
CMDZ5243B
12.35
13
13.65
9.5
13
600
0.25
0.5
9.9
+0.079
CMDZ5244B
13.30
14
14.70
9.0
15
600
0.25
0.1
10
+0.082
CMDZ5245B
14.25
15
15.75
8.5
16
600
0.25
0.1
11
+0.082
CMDZ5246B
15.20
16
16.80
7.8
17
600
0.25
0.1
12
+0.083
CMDZ5247B
16.15
17
17.85
7.4
19
600
0.25
0.1
13
+0.084
CMDZ5248B
17.10
18
18.90
7.0
21
600',·1
0.25
0.1
14
+0.085
CMDZ5249B
18.05
19
19.95
6.6
23
6Qo
0.25
0.1
14
+0.086
CMDZ5250B
19.00
20
21.00
6.2
25
600
0.25
0.1
15
+0.086
CMDZ5251B
20.90
22
23.10
5.6
29
":600
0.25
0.1
17
+0.087
CMDZ5252B
22.80
24
25.20
5·2
33
600
0.25
0.1
18
+0.088
CMDZ5253B
23.75
25
26.25
5.0
35
600
0.25
0.1
19
+0.089
CMDZ5254B
25.65
27
28.~,5
4.6
41
600
0.25
0.1
21
+0.090
CMDZ5255B
26.60
28
29.40
"".·415
44
600
0.25
0.1
21
+0.091
CMDZ5256B
28.50
30
31.50
4.2
49
600
0.25
0.1
23
+0.091
CMDZ5257B
31.35
33
34.65
3.8
58
700
0.25
0.1
25
+0.092
CMDZ5258B
34.20
36
37.80
3.4
70
700
0.25
0.1
27
+0.093
CMDZ5259B
37.05
39
40.95
3.2
80
800
0.25
0.1
30
+0.094
CMDZ5260B
40.85
43
45.15
3.0
93
900
0.25
0.1
33
+0.095
CMDZ5261B
44.65
47
49.35
2.7
105
1000
0.25
0.1
36
+0.095
.l·
MAl¢, , I,
,
All dimensions in inches (mm).
IF! @VFI
@ Izrr'IzK @ IZK
I'"
TOP VIEW
i
1
T
.045(1.15)
.053(1.35)
lL-__
. 0 1 0 ( 0 . 25 ) '---------'-_ _ _ _ _ _ _-' _ _ _ _ _ _
.014(0.35)
.096(2.45)
.108(2.75)
I~
.063(1.60)
.071 ( 1 .80 )
I --~+----..----.031(0.80)
.039(1.00)
1
To
0 2 (0.05)
.010(0.25)
t.004(O.10)
MAXIMUM
131
Central™
CMPD914
Semlconducto. Co.p.
HIGH SPEED
SWITCHING DIODE
DESCRIPTION
The
CENTRAL
SEMICONDUCTOR
CMPD914 type is a ultra-high speed silicon
switching diode manufactured by the epitaxial
planar process, in an epoxy molded surface
mount package, designed for high speed
switching applications.
Marking code is CSD.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 Ilsec.
Forward Surge Current, tp=1 msec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
IFSM
Po
TJ,Tstg
8JA
75
100
250
250
4000
2000
1000
350
-65 to +150
357
UNITS
V
V
mA
mA
mA
mA
mA
mW
°C
°CIW
ELECTRICAL CHARACTERISTICS (TA=250 C unless otherwise noted)
SYMBOL
VSR
IR
IR
VF
CT
trr
TEST CONDITIONS
MIN
100
IR= 1OOIlA
VR=20V
VR=75V
IF=10mA
VR=O, f=1 MHz
IR=IF=10mA, RL=1 oon, Rec. to 1.0mA
132
MAX
25
5.0
1.0
4.0
UNITS
V
nA
IlA
V
pF
4.0
ns
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2.80 )
. 1 18 ( 3 . 00 )
.003(0.08)
.006(0.15)
.041 ( 1 .05)
f
.106(2.70)
~-1
MAX I MUM
.047 ( 1 . 19)
.063(1.60)
"TOO
!
.037(0.94)
.050(1.28)
NO
CONNECTION
A
C
R1
133
Central™
CMPD1001
CMPD1001A
CMPD1001S
Semlcanducta. Ca'lI.
HIGH CURRENT
SWITCHING DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPD1001 series types are silicon switching
diodes manufactured by the epitaxial planar
process, designed for applications requiring
high current capability.
SOT-23 CASE
The following configurations are available:
CMPD1001
CMPD1001S
CMPD1001A
SINGLE
DUAL, IN SERIES
DUAL, COMMON ANODE
MARKING CODE: L20
MARKING CODE: L21
MARKING CODE: L22
MAXIMUM RATINGS (TA=25 0 C)
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Forward Surge Current, tp=1 J.ls
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
IF
IFRM
IRRM
IFSM
IFSM
UNITS
V
90
250
600
600
6000
1000
350
Po
mA
mA
mA
mA
mA
mW
°c
-65 to +150
357
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
BVR
IR
IR
VF
TEST CONDITIONS
IR=100 J.lA
VR=90V
VR=90V, T A=1500C
IF=10mA
MIN
90
MAX
100
100
0.75
134
UNIT
V
nA
J.lA
V
SYMBOL
TEST CONDITIONS
MIN
IF=50mA
IF=100mA
IF=200mA
IF=400mA
VR=O, f=1 MHz
IF=IR=30mA, RECOV. TO 3.0mA, RL=100Q
VF
VF
VF
VF
CT
trr
MAX
0.84
0.90
1.00
1.25
35
50
UNIT
V
V
V
V
pF
ns
All dimensions in inches (mm).
TOP VIEW
. 1 10 ( 2 . 80)
.118(3.00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
f
J
MAX IMUM
.106(2.70)
.047 ( 1 . 19)
.063(1.60)
MAXIMUM
-1
NO
CONNECTION
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
A
C2
A1, C2
CMPD1001
CMPD1001S
A1, A2
CMPD1001A
R1
135
Cantral™
CMPD2003
CMPD2004
CMPD2004S
Semlcanductar Carll.
HIGH VOLTAGE
SWITCHING DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPD2003, CMPD2004, CMPD2004S types
are silicon switching diodes manufactured by
the epitaxial planar process, designed for
applications requiring high voltage capability.
SOT-23 CASE
The following configurations are available:
CMPD2003
CMPD2004
CMPD2004S
MARKING CODE: A82
MARKING CODE: 053
MARKING CODE: DB6
SINGLE
SINGLE
DUAL, IN SERIES
MAXIMUM RATINGS (TA=25 0 C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 Ils
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
CMPD2004
CMPD2004S
CMPD2003
200
240
250
300
200
200
250
225
625
625
4000
4000
1000
1000
350
SYMBOL
VR
VRRM
10
IF
IFRM
IFSM
IFSM
Po
TJ,Tstg
8JA
-65 to +150
357
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
CMPD2004
CMPD2003
CMPD2004S
MIN
MAX
SYMBOL
TEST CONDITIONS
MIN
MAX
250
300
IR=100
IlA
BVR
100
VR=200V
IR
0
100
C
VR=200V,TA=150
IR
100
VR=240V
IR
0
100
VR=240V,TA=150 C
IR
.1.0
1.0
IF=100mA
VF
136
UNITS
V
V
mA
mA
mA
mA
mA
mW
°c
°C/W
UNIT
V
nA
IlA
nA
!lA
V
SYMBOL
VF
CT
trr
CMPD2004
CMPD2004S
MIN
MAX
CMPD2003
TEST CONDITIONS
MIN
MAX
1.25
IF=200mA
5.0
VR=O, f=1 MHz
IF=IR=30mA, RECOV. TO 3.0mA,
50
RL=100Q
5.0
UNIT
V
pF
50
ns
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
f
J
.047 ( 1 . 19)
.063(1.60)
MAX IMUM
-1
NO
CONNECTION
*
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
A
A2
C1
A1, C2
CMPD2003
CMPD2004
CMPD2004S
R1
137
Central™
CMPD2836
CMPD2838
Semiconductor Corp.
DUAL SILICON
SWITCHING DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPD2836, CMPD2838 types are ultra-high
speed silicon switching diodes manufactured
by the epitaxial planar process, in an epoxy
molded surface mount package, designed for
high speed switching applications.
SOT-23 CASE
The following configurations are available:
CMPD2836
CMPD2838
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
MARKING CODE: CA2
MARKING CODE: CAS
MAXIMUM RATINGS (TA=25 0 C)
UNITS
V
mA
mA
mW
SYMBOL
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
75
200
300
350
VRRM
10
IFM
PD
-65 to +150
357
TJ,T stg
8JA
°C
oCIW
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
BVR
IR
VF
VF
VF
CT
trr
TEST CONDITIONS
MIN
75
IR=100~A
VR=50V
IF=10mA
IF=50mA
IF=100mA
VR=O, f=1 MHz
IR=IF=10mA, RL=100n, Rec. to 1.0mA
138
TYP
1.5
MAX
100
1.0
1.0
1.2
4.0
4.0
UNITS
V
nA
V
V
V
pF
ns
All dimension in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 118 ( 3 .00 )
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
f
J
.047(1.19)
.063(1.60)
lC=~~~
MAXIMUM
-1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
C1
+
C2
A2
A1
A1, A2
C1, C2
CMPD2836
CMPD2838
R1
139
Cantral™
CMPD4150
Semiconductor Corp.
HIGH CURRENT
HIGH SPEED
SWITCHING DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPD4150 type is an ultra-high speed silicon
switching diode manufactured by the epitaxial
planar process, in an epoxy molded surface
mount package, designed for high speed
switching applications.
Marking code is ABA.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 j..lsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
50
50
250
250
4000
1000
350
UNITS
V
V
mA
mA
mA
mA
mW
-65 to +150
357
oCIW
VR
VRRM
IF
IFRM
IFSM
IFSM
Po
TJ,Tstg
0JA
°c
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
IR
VF
VF
VF
VF
VF
CT
trr
TEST CONDITIONS
VR=50V
IF=1.0mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
VR=O, f=1 MHz
IR=IF=10mA, RL=1000, Rec. to 1.0mA
140
MIN
0.54
0.66
0.76
0.82
0.87
MAX
100
0.62
0.74
0.86
0.92
1.0
4.0
4.0
UNITS
nA
V
V
V
V
V
pF
ns
All dimensions in inches (mm).
TOP VIEW
. 1 10 ( 2 . 80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
t
.106(2.70)
J
MAX IMUM
. 047 ( 1 . 19)
.063(1.60)
"TOO
~
+
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
NO
CONNECTION
A
C
R1
141
Central™
Semiconductor Corp.
CMPD4448
HIGH SPEED
SWITCHING DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPD4448 type is a ultra-high speed silicon
switching diode manufacturedby the epitaxial
planar process, in an epoxy molded surface
mount package, designed for high speed
switching applications.
Marking code is AAD.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 Ilsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
8JA
75
100
250
250
4000
1000
350
-65 to +150
357
UNITS
V
V
rnA
rnA
rnA
rnA
mW
°C
oCIW
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
VBR
VBR
IR
VF
VF
CT
trr
MIN
TEST CONDITIONS
75
IR=5.0IlA
100
1OO
IR=
IlA
VR=20V
0.62
IF=5.0mA
IF=100mA
VR=O, f=1 MHz
IR=IF=10mA, RL=100n, Rec. to 1.0mA
142
MAX
25
0.72
1.0
4.0
4.0
UNITS
V
V
nA
V
V
pF
ns
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 .80)
. 118 (3.00 )
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
NOMINAL
t
.106(2.70)
~-1
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
MAXIMUM
1
~==r=1~~
+
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
NO
CONNECTION
A
C
R1
143
Central™
CMPD5001
CMPD5001S
Semiconductor Carp.
HIGH CURRENT
INDUCTIVE LOAD
SWITCHING DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPD5001 series types are silicon switching
diodes manufactured by the epitaxial planar
process, designed for switching inductive load
applications requiring extremely high current
capability.
SOT-23 CASE
The following configurations are available:
CMPD5001
CMPD5001S
MARKING CODE: DA2
MARKING CODE: 049
SINGLE
DUAL, IN SERIES
MAXIMUM RATINGS (TA=25 0 C)
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Forward Surge Current, tp=1 jls
Forward Surge Current, tp=1 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
IF
IFRM
IRRM
IFSM
IFSM
Po
UNITS
V
mA
mA
mA
mA
mA
mW
120
400
800
600
6000
1500
350
-65 to +150
357
TJ,Tstg
8JA
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
BVR
IR
IR
VF
VF
VF
VF
MIN
120
TEST CONDITIONS
IR=1.0mA
VR=90V
VR=90V, T A=150 0 C
IF=10mA
IF=50mA
IF=100mA
IF=200mA
144
MAX
175
100
100
0.75
0.84
0.90
1.00
UNITS
V
nA
jlA
V
V
V
V
SYMBOL
VF
CT
trr
trr
TEST CONDITIONS
IF=400mA
VR=O, f=1 MHz
IF=IR=30mA, RECOV. TO 1.0mA, RL =1 oon
IF=IR=10mA, RECOV. TO 1.0mA, RL=100n
All dimensions in inches (mm).
MAX
MIN
1.25
35
60
50
UNITS
V
pF
ns
ns
TOP VIEW
. 1 10 ( 2 .80)
. 118 ( 3 .00)
.003(0.08)
.006(0.15)
.041(1.05)
f
J
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
.l
-1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
NO
CONNECllON
A
A1, C2
C
CMPD5001
CMPD5001S
R1
145
Central™
CMPD6263
CMPD6263A
CMPD6263C
CMPD6263S
S.mlcOnductO. CO....
SCHOTTKY DIODES
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPD6263 Series types are Silicon Schottky
diodes designed for low current surface mount
fast switching applications requiring a low
forward voltage drop.
SOT-23 CASE
The following configurations are available:
CMPD6263
CMPD6263A
CMPD6263C
CMPD6263S
MARKING CODE:
MARKING CODE:
MARKING CODE:
MARKING CODE:
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
076
098
097
096
MAXIMUM RATINGS (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Forward Surge Current, tp=1.0 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFSM
PD
TJ,Tstg
8JA
UNITS
V
mA
mA
mW
70
15
50
350
-65 to +150
357
°C
°CIW
ELECTRICAL CHARACTERISTICS (T A=25 0 C)
TEST CONDITIONS
IR=10/-lA
IF=1.0mA
VR=50V
VR=OV, f=1.0MHz
MIN
70
TYP
MAX
395
410
200
2.0
V
98
146
UNITS
mV
nA
pF
All dimensions in inches (mm).
TOP VIEW
. 110 (2.80)
. 1 18 ( 3 .00)
.003(0.08)
.006(0.15)
.041(1.05)
t
J
.047 ( 1 . 19)
.063(1.60)
+
MAXIMUM
No
Connection
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
A
rL-""'-----',--'--,
A1,A2.
CMPD6263
CMPD6263A
A1
C1
CMPD6263C
CMPD6263S
R1
147
Central™
CMPD7000
Semiconductor Corp.
DUAL SILICON SWITCHING DIODE
SERIES CONNECTION
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD7000 type is an ultra-high speed silicon
switching diodes manufactured by the
epitaxial planar process, in an epoxy molded
surface mount package, connected in a series
configuration, designed for high speed
switching applications.
Marking Code is CSC.
SOT-23 CASE
MAXIMUM RATINGS (T A=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
mA
mA
mW
100
200
500
350
VRRM
10
IFM
PD
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS (T A=250C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
BVR
IR
IR
IR
VF
VF
VF
CT
trr
IR= 1OOIlA
VR=50V
VR=50V, TA=1250C
VR=100V
IF=1.0mA
IF10mA
IF=100mA
VR=O, f=1 MHz
IR=IF=10mA, RL =1 oon, Rec. to 1.0mA
100
148
TYP
MAX
2.0
300
100
500
0.70
0.82
1.10
1.5
4.0
0.55
0.67
0.75
UNITS
V
nA
IlA
nA
V
V
V
pF
ns
All dimensions in inches (mm).
TOP VIEW
. 110 (2.80)
. 118 (3.00 )
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
f
J
MAXIMUM
.106(2.70)
. 047 ( 1 . 19 )
.063(1.60)
MAXIMUM
i
1
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
C1
A2
A1, C2
R1
149
Central™
CMPF4391
CMPF4392
CMPF4393
Semiconductor Corp.
N·CHANNEL JFET
DESCRIPTION:
The
CENTRAL
SEMICONOUCTOR
CMPF4391 series types are N-Channel Silicon
Field Effect Transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for switching
applications.
Marking Codes are 6J, 6K, and 6G
Respectively.
SOT·23 CASE
MAXIMUM RATINGS (TA=25°C)
40
40
40
50
350
UNITS
V
V
V
mA
mW
-65 to +150
357
°C
°CIW
SYMBOL
Orain-Gate Voltage
Gate-Source Voltage
Orain-Source Voltage
Gate Current
Power Oissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VGO
VGS
VOS
IG
Po
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
CMPF4391
SYMBOL TEST CONDITIONS
MIN MAX
0.1
VGS=20V
IGSS
0.2
VGS=20V, TA=100oC
IGSS
150
50
VOS=20V
loSS
0.1
VOS=20V, VGS=12V
IO(OFF)
VOS=20V, VGS=7.0V
IO(OFF)
VOS=20V, VGS=5.0V
IO(OFF)
0.2
VOS=20V, VGS=12V,TA=100oC
IO(OFF)
VOS=20V,
VGS=7.0V,
TA=100oC
IO(OFF)
VOS=20V, VGS=5.0V, TA=100oC
IO(OFF)
40
IG=1.0)lA
BVGSS
4.0
10
VGS(OFF) VOS=20V,IO=1.0nA
1.0
IG=1.0mA
VGS(f)
0.4
VOS(ON) IO=12mA
VOS(ON) IO=6.0mA
VOS(ON) IO=3.0mA
150
CMPF4392
MIN MAX
0.1
0.2
25
75
0.1
0.2
40
2.0
5.0
1.0
0.4
CMPF4393
MIN MAX UNITS
0.1
nA
0.2
)lA
5.0
30
mA
nA
nA
0.1
nA
)lA
)lA
0.2
)lA
40
V
3.0
V
0.5
1.0
V
V
V
V
0.4
SYMBOL
rOS(ON)
rds(ON)
Ciss
Crss
Crss
Crss
tON
tON
tON
tOFF
tOFF
tOFF
TEST CONDITIONS
10=1.0mA, VGS=O
VGS=O, 10=0, f=1.0kHz
VOS=20V, VGS=O, f=1.0MHz
VGS=12V, VOs=O, f=1.0MHz
VGS=7.0V, VOs=o, f=1.0MHz
VGS=5.0V, VOs=o, f=1.0MHz
10(ON)=12mA
10(ON)=6.0mA
10(ON)=3.0mA
VGS(OFF)=12V
VGS(OFF)=7.0V
VGS(OFF)=5.0V
CMPF4391
MIN MAX
30
30
14
3.5
CMPF4392
MIN MAX
60
60
14
3.5
15
15
20
35
CMPF4393
MIN MAX UNITS
Q
100
Q
100
pF
14
pF
pF
pF
3.5
ns
ns
ns
15
ns
ns
ns
50
All dimensions in inches (mm).
TOP VIEW
. 1 10 ( 2 . 80 )
. 1 1 8 ( 3 . 00)
.003(0.08)
.006(0.15)
.083(2.10)
.041 ( 1 .05)
NOMINAL
f
J
MAXIMUM
. 047 ( 1 . 19 )
.063(1.60)
*
-1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAO COOE:
1) ORAIN
2) SOURCE
3) GATE
R1
151
Central™
Semiconductor Corp.
CMPF4416A
SILICON N-CHANNEL JFET
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPF4416A type is an epoxy molded NChannel Silicon Junction Field Effect Tran~istor
manufactured in an SOT-23 case, designed
for VHF amplifier and mixer applications.
Marking code is SBG.
SOT-23 CASE
MAXIMUM RATINGS (T A=250C)
UNITS
V
V
mA
mW
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
35
35
10
350
VOS
VGS
IG
Po
-65 to +150
357
°C
°CIW
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
IGSS
lOSS
BVGSS
VGS(off)
9fs
Ciss
C rss
NF
TEST CONDITIONS
MIN
VGS=20V
5.0
VOS=15V, VGS=O
35
IG=1.0IlA
2.5
VOS=15V, IO=1.0nA
4.5
VOS=15V, VGS=O, f=1.0kHz
VOS=15V, VGS=O, f=1.0MHz
VOS=15V, VGS=O, f=1.0MHz
VOS=15V, VGS=O, f=1.0kHz, RG=1.0MQ
152
MAX
1.0
15
6.0
7.5
4.5
1.2
2.5
UNITS
nA
mA
V
V
mmhos
pF
pF
dB
All dimensions in inches (mm).
TOP VIEW
. 110 (2.80 )
. 1 18 ( 3 . 00 )
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
NOMINAL
t
J
MAXIMUM
.106(2.70)
MAXIMUM
-1
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) DRAIN
2) SOURCE
3) GATE
R1
153
Central™
Samlconductor Carll.
CMPS5064
DESCRIPTION:
SILICON CONTROLLED RECTIFIER
The
CENTRAL
SEMICONOUCTOR
CMPS5064 type is an epoxy molded PNPN
Silicon Controlled Rectifier manufactured in
an SOT-23 case, designed for control systems
and sensing circuit applications.
Marking code is 02D.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
A
A
mW
SYMBOL
Peak Repetitive Off-State Voltage
Peak Repetitive Reverse Voltage
RMS On-State Current
Average On-State Current (TC=670 C)
Power Oissipation
Operating and Storage
Junction Temperature
Thermal Resistance
400
400
0.8
0.51
350
VORM
VRRM
IT(RMS)
IT(AV)
Po
TJ,Tstg
E>JA
-65 to +150
357
°c
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
IORM
IRRM
VT
IGT
VGT
VGO
IH
tON
TEST CONDITIONS
MIN
VO=400V, RGK=1 KQ,T C=125 0 C
VO=400V, RGK=1 KQ,T C=125 0 C
IT=1.2A
VO=7.0V, RL=1 OOQ, RGK=1 KQ
VO=7.0V, RL=100Q, RGK=1KQ
0.1
VO=400V, RL=100Q, TC=125 0 C
VO=7.0, RGK=1 KQ
VO=400V, IGT=1.0mA, RGK=1.0Q, di/dt=6.0Al/ls
154
MAX
50
50
1.7
200
0.8
5.0
2.8 TYP
UNITS
/lA
/lA
V
/lA
V
V
mA
/ls
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
f
J
MAXIMUM
.106(2.70)
mi""'
~
.047 ( 1 . 19 )
.063(1.60)
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) CATHODE
2) GATE
3) ANODE
R1
155
Central™
CMPSH-3
CMPSH-3A
Semlconducto. Co....
CMP~H-3C
CMPSH-3S
SCHOTTKY DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPSH-3
Series types are Silicon Schottky diodes
designed for surface mount fast switching
applications requiring a low forward voltage
drop.
SOT-23 CASE
The following configurations are available:
CMPSH-3
CMPSH-3A
CMPSH-3C
CMPSH-3S
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MARKING
MARKING
MARKING
MARKING
CODE:
CODE:
CODE:
CODE:
D95
DB1
DB2
DA5
MAXIMUM RATINGS (TA=25oC)
SYMBOL
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=10 ms
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
mA
mA
mA
mW
30
100
350
750
350
VRRM
IF
IFRM
IFSM
Po
-65 to +150
357
TJ,Tstg
8JA
°C
°CfW
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
BVR
VF
VF
VF
IR
IR
CT
trr
TEST CONDITIONS
IR= 1OO!-LA
IF=2.0mA
IF=15mA
IF=100mA
VR=25V
VR=25V, TA=100 o C
VR=1.0V, f=1 MHz
IF=IR=10mA, Irr=1.0mA, RL=1000
156
MIN
30
TYP
MAX
0.29
0.40
0.74
90
25
7.0
0.33
0.45
1.00
500
100
5.0
UNITS
V
V
V
V
nA
!-LA
pF
ns
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041(1.05)
NOMINAL
t
J
MAX IMUM
.106(2.70)
.047 ( 1 . 19)
.063(1.60)
MAXIMUM
*
1
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
No
A
C1
C2
Connection
A1,A2
C
CMPSH-3
CMPSH-3A
C1
CMPSH-3S
CMPSH-3C
R1
157
Central™
CMPT918
Semlconducto. CO'II.
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT918 type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high frequency (VHF/UHF)
amplifier and oscillator applications.
Marking code is C3B.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
30
15
3.0
50
350
UNITS
V
V
V
mA
mW
-65 to +150
357
°C
°C/W
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
fT
Cob
Cob
Cib
Pout
G pe
NF
TEST CONDITIONS
MIN
VCB=15V
IC=1.0J.lA
30
IC=3.0mA
15
IE=10J.lA
3.0
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
20
VCE=1.0V, IC=3.0mA
VCE=10V, IC=4.0mA, f=100MHz
600
VCB=OV, IE=O, f=1.0MHz
VCB=10V, IE=O, f=1.0MHz
VEB=0.5V, IC=O, f=1.0MHz
VCB=15V, IC=8.0mA, f=500MHz
30
VCB=12V, IC=6.0mA, f=200MHz
11
VCE=6.0V, IC=1.0mA, RS=50n, f=60MHz
158
MAX
10
0.4
1.0
3.0
1.7
2.0
6.0
UNITS
nA
V
V
V
V
V
MHz
pF
pF
pF
mW
dB
dB
All dimensions in inches (mm).
TOP VIEW
. 1 10 ( 2 . 80)
. 1 18 ( 3 . 00)
.003(0.08)
.006(0.15)
. 041 ( 1 .05)
NOMINAL
f
J
MAXIMUM
.106(2.70)
MAXIMUM
.047(1.19)
.063(1.60)
*
1
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
159
Central™
Semiconductor Corp.
CMPT930
NPN SILICON TRANSISTOR
DESCRIPTION
The
CENTRAL
SEMICONDUCTOR
CMPT930 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose
amplifier applications.
Marking Code is C1 X.
SOT-23 CASE
MAXIMUM RATINGS (T A=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
mA
mW
45
45
5.0
30
350
VCBO
VCEO
VEBO
IC
PD
-65 to +150
357
°c
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
ICEO
ICES
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
NF
TEST CONDITIONS
VCB=45V
VCE=5.0V
VCE=45V
VEB=5.0V
IC=10IlA
IC=10mA
IE=1OIlA
IC=10mA, IB=0.5mA
IC=10mA, IB=0.5mA
VCE=5.0V, IC=10IlA
VCE=5.0V,IC=5OOIlA
VCE=5.0V,IC=10mA
VCE=5.0V, IC=500mA, f=30MHz
VCB=5.0V, IE=O, f=1.0MHz
VCE=5.0V, IC=10mA, RS=10kn,
f=10Hz to 15.7kHz
160
MIN
MAX
10
10
10
10
V
V
45
45
5.0
0.6
100
150
UNITS
nA
nA
nA
nA
1.0
1.0
300
V
V
V
600
8.0
MHz
pF
3.0
dB
30
All dimensions in inches (mm).
TOP VIEW
. 1 1 0 ( 2 . 80 )
, 1 1 8 ( 3 . 00 )
.003(0.08)
,006(0,15)
. 041 ( 1 . 05 )
NOMINAL
t
,106(2.70)
~-1
MAX IMUM
MAXIMUM
.047(1.19)
.063(1.60)
~
1
,014(0.35)
.020(0,50)
,037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
161
Central™
Semiconductor Cor...
CMPT2222A
NPN SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT2222A type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose and
switching applications.
Marking Code is C1P.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
75
40
6.0
600
350
UNITS
V
V
V
mA
mW
-65 to +150
357
°C
°C/w
VCBO
VCEO
VEBO
IC
PD
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
ICBO
ICEV
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=60V
VCB=60V, TA=125 0 C
VCE=60V, VEB=3.0V
VEB=3.0V
IC= 1O /-lA
IC=10mA
IE=10/-lA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V,IC=0.1mA
V CE=1 OV, IC=1.0mA
VCE=10V,IC=10mA
VCE=1.0V,IC=150mA
MIN
MAX
10
10
10
10
75
40
6.0
0.6
35
50
75
50
162
0.3
1.0
1.2
2.0
UNITS
nA
/-lA
nA
nA
V
V
V
V
V
V
V
SYMBOL
TEST CONDITIONS
MIN
100
VCE=10V,IC=150mA
40
VCE=10V,IC=500mA
300
VCE=20V, IC=20mA, f=100MHz
VCB=10V, IE=O, f=1.0MHz
VEB=0.5V, IC=O, f=1.0MHz
2.0
VCE=10V, IC=1.0mA, f=1.0kHz
0.25
VCE=10V, IC=10mA, f=1.0kHz
V CE=1 OV, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
50
75
VCE=10V, IC=10mA, f=1.0kHz
5.0
VCE=10V, IC=1.0mA, f=1.0kHz
25
VCE=10V, IC=10mA, f=1.0kHz
VCB=10V, IE=20mA, f=31.8MHz
VCE=10V, IC=100IlA, RS=1.0kQ, f=1.0kHz
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
hFE
hFE
fT
Cob
Cib
hie
hie
h re
h re
hfe
hfe
hoe
hoe
rb'C c
NF
td
tr
ts
tf
MAX
300
8.0
25
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
10
25
225
60
UNITS
MHz
pF
pF
kQ
kQ
x10- 4
x10- 4
Ilmhos
Ilmhos
ps
dB
ns
ns
ns
ns
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 1 18 (3.00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
f
J
MAXIMUM
.047(1.19)
.063(1.60)
kC====i=!=i===~
-1
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
163
cantral™
Semlconducto. CO'II.
CMPT2369
DESCRIPTION:
NPN SILICON TRANSISTOR
The
CENTRAL
SEMICONDUCTOR
CMPT2369 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for ultra high speed switching
applications.
Marking Code is C1J.
SOT-23 CASE
MAXIMUM RATINGS (TA=25 0 C)
UNITS
V
V
V
V
mA
mW
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
40
40
15
4.5
500
350
VCBO
VCES
VCEO
VEBO
IC
PD
-65 to +150
357
°c
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
ICBO
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
Cob
fT
ts
ton
toft
TEST CONDITIONS
VCB=20V
VCB=20V, TA=125 0 C
MIN
IC=10~A
MAX
0.4
~A
30
~A
V
40
40
15
4.5
IC=10~A
IC=10mA
IE=10~A
IC=10mA, IB=1.0mA
IC= 10mA, IB=1.0mA
0.7
VCE=1.0V,IC=10mA
40
VCE=2.0V,IC=100mA
20
VCB=5.0V, IE=O, f=1.0MHz
VCE=10V, IC=10mA, f=100MHz
500
VCC=3.0V,IC=IB1=IB2=10mA
VCC=3.0V, IC=10mA, IB1=3.0mA
VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA
164
UNITS
V
0.25
0.85
120
4.0
13
12
18
V
V
V
V
pF
MHz
ns
ns
ns
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 .80 )
. 1 18 (3.00 )
.003(0.08)
.006(0.15)
.041(1.05)
t
.106(2.70)
J
MAX IMUM
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
*
1
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
165
Central™
CMPT2484
Semiconductor Carll.
NPN SILICON
LOW NOISE TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT2484 type is an NPN silicon low noise
transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for low noise
amplifier applications.
Marking Code is C1 U.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
V
mA
mW
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
60
60
6.0
50
350
VCBO
VCEO
VEBO
IC
PD
-65 to +150
357
TJ,Tstg
8JA
°C
°CIW
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
ICBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
hFE
Cob
Cib
NF
TEST CONDITIONS
VCB=45V
VCB=45V, TA=150oC
VEB=5.0V
IC=10IlA
IC=10mA
IE=1OIlA
IC=1.0mA,IB=1OOIlA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V,IC=10mA
VCB=5.0V, IE=O, f=1.0MHz
VEB=0.5V, IC=O, f=1.0MHz
VCE=5.0V, IC=10IlA, RS=10kQ
f=1.0kHz, BW=200Hz
166
MIN
MAX
10
10
10
0.35
0.95
UNITS
nA
IlA
nA
V
V
V
V
V
800
6.0
6.0
pF
pF
3.0
dB
60
60
5.0
250
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041(1.05)
NOMINAL
f
J
MAXIMUM
.106(2.70)
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
~
-1
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
167
Cantral™
CMPT2907A
Semlconducto. CO'II.
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT2907 A type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose
and switching applications.
Marking Code is C2F.
SOT-23 CASE
MAXIMUM RATINGS (T A=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
60
60
5.0
600
350
VCBO
VCEO
VEBO
IC
PD
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
ICBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
MIN
TEST CONDITIONS
VCB=50V
VCB=50V, TA=1250C
VCE=30V, VBE=0.5V
IC=10IlA
IC=10mA
IE=1OIlA
IC=150mA, IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA, IB=50mA
VCE=10V,IC=0.1mA
VCE=10V,IC=1.0mA
VCE=10V,IC=10mA
VCE=10V,IC=150mA
MAX·
10
10
50
60
60
5.0
0.4
1.6
1.3
2.6
75
100
100
100
168
300
UNITS
nA
IlA
nA
V
V
V
V
V
V
V
SYMBOL
hFE
fT
Cob
Cib
ton
td
tr
toft
ts
tf
TEST CONDITIONS
VCE=10V,IC=500mA
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=O, f=1.0MHz
VBE=2.0V, IC=O, f=1.0MHz
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
MIN
50
200
MAX
UNITS
8.0
30
45
10
40
100
80
30
MHz
pF
pF
ns
ns
ns
ns
ns
ns
All dimensions in inches (mm).
TOP VIEW
. 1 10 (2.80)
. 118 (3.00)
.003(0.08)
.006(0.15)
.041(1.05)
f
d
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
+
-1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
169
Central™
Semiconductor corp.
CMPT3019
NPN SILICON TRANSISTOR
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CMPT3019 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for very high current, general
purpose amplifier applications.
Marking Code is C3A.
SOT-23 CASE
MAXIMUM RATINGS (T A=25°C)
UNITS
V
V
V
mA
A
mW
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
120
80
7.0
500
1.0
350
VCBO
VCEO
VEBO
IC
ICM
PD
-65 to +150
357
°C
°CIW
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
NF
TEST CONDITIONS
VCB=90V
VEB=5.0V
MIN
IC=100~A
MAX
10
10
120
80
7.0
IC=30mA
IE=100~A
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA, IB=15mA
VCE=10V,IC=0.1mA
50
VCE=10V,IC=10mA
90
VCE=10V,IC=150mA
100
VCE=10V,IC=500mA
50
VCE=10V, IC=50mA, f=1.0MHz 100
VCB=10V, IE=O, f=1.0MHz
VEB=0.5V, IC=O, f=1.0MHz
VCE=10V, IC=100mA, RS=1kQ, f=1.0kHz
170
0.2
0.5
1.1
UNITS
nA
nA'
V,
V
V
V
V
V
300
12
60
4.0
MHz
pF
pF
dB
All dimensions in inches (mm).·
TOP VIEW
. 110 ( 2 . 80)
. 1 18 (3.00 )
.003(0.08)
.006(0.15)
.041(1.05)
f
J
MAX IMUM
.106(2.70)
MAXIMUM
-1
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
171
Central™
CMPT3640
Semiconductor Cor...
PNP SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT3640 type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for saturated switching applications.
Marking code is C2J.
SOT-23 CASE
MAXIMUM RATINGS (TA=25 0 C)
UNITS
V
V
V
mA
mW
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
12
12
4.0
80
350
VCSO
VCEO
VESO
IC
PD
-65 to +150
357
°c
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICES
ICES
IS
SVCSO
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
VSE(SAT)
hFE
TEST CONDITIONS
VCE=6.0V
VCE=6.0V, T A=65 0 C
VCE=6.0V, VES=O
IC= 1OOIJ-A
IC=10mA
IE= 1OOIJ-A
IC=10mA,IS=1.0mA
IC=50mA, IS=5.0mA
IC=10mA, IS=1.0mA, TA=65 0 C
IC=10mA,IS=0.5mA
IC=10mA, IS=1.0mA
IC=50mA,IS=5.0mA
VCE=0.3V,IC=10mA
172
MIN
MAX
10
10
10
12
12
4.0
0.75
0.80
30
0.20
0.60
0.25
0.95
1.00
1.50
120
UNITS
nA
IJ-A
nA
V
V
V
V
V
V
V
V
V
SYMBOL
TEST CONDITIONS
VCE=1.0V,IC=50mA
VCE=5.0V, IC=10mA, f=100MHz
VCS=5.0V, IE=O, f=1.0MHz
VSE=0.5V, IC=O, f=1.0MHz
V CC=6.0V, VSE=1.9, IC=50mA, IS1 =5.0mA
VCC=6.0V, VSE=1.9, IC=50mA, ISF5.0mA
VCC=6.0V, IC=50mA, IS1=IS2=5.0mA
VCC=6.0V, IC=50mA, IS1=IS2=5.0mA
VCC=6.0V, VSE=1.9, IC=50mA, IS1=5.0mA
VCC=1.5V, IC=10mA, IS1=0.5mA
VCC=6.0V, VSE=1.9, IC=50mA, IS1=5.0mA
VCC=1.5V, IC=10mA, IS1=IS2=0.5mA
hFE
fT
Cob
Cib
td
tr
ts
tf
ton
ton
toft
toft
MIN
20
500
MAX
UNITS
MHz
3.5
3.5
pF
pF
10
ns
ns
ns
ns
ns
ns
ns
ns
30
20
12
25
60
35
75
All dimensions in inches (mm).
TOP VIEW
. 110 (2.80 )
. 1 18 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05)
NOMINAL
f
J
MAXIMUM
.106(2.70)
.047(1.19)
.063(1.60)
MAXIMUM
-1
1
LC::====r~==~
*
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) SASE
2) EMITTER
3) COLLECTOR
R1
173
Central™
Semiconductor Corp.
CMPT3646
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT3646 type is an NPN Silicon Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current, ultra high speed
switching applications.
Marking code is C2R.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
Collector-Sase Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCSO
VCES
VCEO
VESO
IC
PD
UNITS
V
V
V
V
mA
mW
40
40
15
5.0
200
350
-65 to +150
357
T J,Tstg
8JA
°c
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICES
ICES
SVCSO
SVCES
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
TEST CONDITIONS
VCE=20V
VCE=20V, TA=65 0 C
IC=1001lA
IC=10IlA
IC=10mA
IE=1OOIlA
IC=30mA, IS=3.0mA
IC=30mA, IS=3.0mA, T A=65 0 C
IC=100mA, IS=10mA
IC=300mA,IS=30mA
IC=30mA, IS=3.0mA
IC=100mA,IS=10mA
IC=300mA, IS=30mA
VCE=O.4V, IC=30mA
VCE=0.5V,IC=100mA
174
MIN
MAX
0.5
3.0
40
40
15
5.0
0.20
0.30
0.28
0.50
0.95
1.20
1.70
120
0.75
30
25
25
UNITS
IlA
IlA
V
V
V
V
V
V
V
V
V
V
V
SYMBOL
hFE
fT
Cob
Cib
ton
toft
MAX
TEST CONDITIONS
MIN
VCE=1.0V,IC=300mA
15
VCE=10V, IC=30mA, f=100MHz
350
VCS=5.0V, IE=O, f=1.0MHz
VSE=0.5V, IC=O, f=1.0MHz
VCC=10V, IC=300mA, IS1=30mA
VCC=10V, IC=300mA, IS1=IS2=30mA
VCC=10V,IC=IS1=IS2=10mA
ts
UNITS
MHz
5.0
8.0
18
28
18
pF
pF
ns
ns
ns
All dimensions in inches (mm).
TOP VIEW
. 1 10 (2.80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05)
NOMINAL
t
J
MAX IMUM
.106(2.70)
MAXIMUM
-1
.047 ( 1 . 19)
.063(1.60)
+
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) SASE
2) EMITTER
3) COLLECTOR
R1
175
Central™
CMPT3904 NPN
CMPT3906 PNP
Semiconductor Corll.
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT3904, CMPT3906 types are
complementary
silicon
transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose
amplifier and switching applications.
Marking Codes are C1 A, C2A
Respectively.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCSO
VCEO
VESO
IC
PD
CMPT3906
40
40
CMPT3904
60
40
6.0
TJ,Tstg
8JA
5.0
UNITS
V
V
V
200
350
mA
-65 to +150
357
°C
°C/W
mW
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICEV
ISL
SVCSO
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=30V, VES=3.0V
VCE=30V, VES=3.0V
IC=10IlA
IC=1.0mA
IE= 1OIlA
IC=10mA, IS=1.0mA
IC=50mA, IS=5.0mA
IC=10mA, IS=1.0mA
IC=50mA, IS=5.0mA
VCE=1.0V, IC=0.1 mA
VCE=1.0V, IC=1.0mA
VCE=1.0V,IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V,IC=100mA
CMPT3904
MIN MAX
50
50
60
40
6.0
0.20
0.30
0.65 0.85
0.95
40
70
100
300
60
30
176
CMPT3906
MIN MAX
50
40
40
5.0
0.65
60
80
100
60
30
0.25
0.40
0.85
0.95
300
UNITS
nA
nA
V
V
V
V
V
V
V
SYMBOL
fT
Cob
Cib
hie
h re
hfe
hoe
NF
td
tr
ts
tf
CMPT3904
TEST CONDITIONS
MIN MAX
300
VCE=20V, IC=10mA, f=100MHz
4.0
VCB=5.0V, IE=O, f=1.0MHz
8.0
VBE=0.5V, IC=O, f=1.0MHz
1.0
10
VCE=10V, IC=1.0mA, f=1.0kHz
0.5
8.0
VCE=10V, IC=1.0mA, f=1.0kHz
100
400
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
40
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100mA, RS=1.0kQ
f=10Hz to 15.7kHz
5.0
VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA 35
VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA 35
200
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
50
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
All dimensions in inches (mm).
CMPT3906
MIN MAX
250
4.5
10
2.0
12
0.1
10
100
400
3.0
60
Ilmhos
4.0
35
35
225
75
dB
ns
ns
ns
ns
UNITS
MHz
pF
pF
kQ
x10- 4
TOP VIEW
. 110 (2.80 )
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041(1.05)
NOMINAL
f
J
MAXIMUM
.106(2.70)
MAXIMUM
-1
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
177
Central™
S....lconducto. Co,•.
CMPT4033
PNP SILICON TRANSISTOR
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CMPT4033 type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for very high current, general
purpose amplifier applications.
Marking Code is C4A.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
V
mA
A
mW
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
80
80
5.0
500
1.0
350
VCBO
VCEO
VEBO
IC
ICM
Po
-65 to +150
357
°c
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
'CBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
Cib
TEST CONDITIONS
VCB=60V
VEB=5.0V
IC=10IlA
IC=10mA
IE= 1OIlA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=5.0V, 'C=0.1mA
VCE=5.0V,IC=100mA
VCE=5.0V,IC=500mA
V CE=1 OV, IC=50mA, f=1.0MHz
VCB=10V, IE=O, f=1.0MHz
VEB=O.5V, IC=O, f=1.0MHz
178
MIN
MAX
50
10
80
80
5.0
V
0.15
0.50
0.90
1.10
75
100
70
100
UNITS
nA
nA
V
V
V
V
V
V
300
20
110
MHz
pF
pF
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 1 18 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
f
~-1
MAX IMUM
.047 ( 1 . 19)
.063(1.60)
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
179
Central™
CMPT4401 NPN
CMPT4403 PNP
SemiconduCtor Corp.
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT4401, CMPT4403 types are
complementary
silicon
transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose
amplifier and switching applications.
Marking Codes are C2X, C2T
Respectively.
SOT-23 CASE
MAXIMUM RATINGS (TA=25 0 C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
CMPT4401
60
40
VCBO
VCEO
VEBO
IC
CMPT4403
40
40
5.0
6.0
Po
UNITS
V
V
600
350
V
mA
mW
-65 to +150
357
°c
°c/w
ELECTRICAL CHARACTERISTICS (T A=25 0 C unless otherwise noted)
SYMBOL
ICEV
IBEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCE=35V, VEB=O.4V
VCE=35V, VEB=O.4V
IC=100flA
IC=1.0mA
IE= 1OOfl A
IC=150mA,IB=15mA
IC=500mA, IB=50mA
IC=150mA,IB=15mA
IC=500mA, IB=50mA
VCE=1.0V, IC=0.1 mA
VCE=1.0V, IC=1.0mA
VCE=1.0V,IC=10mA
CMPT4401
MIN MAX
0.1
0.1
60
40
6.0
0.40
0.75
0.75 0.95
1.2
20
40
80
180
CMPT4403
MIN MAX
0.1
0.1
40
40
5.0
0.40
0.75
0.75
0.95
1.3
30
60
100
UNITS
flA
flA
V
V
V
V
V
V
V
SYMBOL
hFE
hFE
hFE
fT
Cob
Cib
hie
h re
hfe
hoe
td
tr
ts
tf
CMPT4401
MIN MAX
TEST CONDITIONS
100
VCE=1.0V,IC=150mA
VCE=2.0V,IC=150mA
40
VCE=2.0V, IC=500mA
250
VCE=10V, IC=20mA, f=100MHz
VCS=5.0V, IE=O, f=1.0MHz
VSE=0.5V, IC=O, f=1.0MHz
1.0
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
VCE=10V, IC=1.0mA, f=1.0kHz
40
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
VCE=10V, IC=1.0mA, f=1.0kHz
VCC=30V, VSE=2.0, IC=150mA, IS1=15mA
VCC=30V, VSE=2.0, IC=150mA, IS1=15mA
VCC=30V, IC=150mA, IS1=IS2=15mA
VCC=30V, IC=150mA, IS1=IS2=15mA
CMPT4403
MIN MAX
UNITS
300
100
20
200
6.5
30
15
8.0
500
30
15
20
225
30
1.5
0.1
60
1.0
300
MHz
pF
pF
kn
x10- 4
8.5
30
15
8.0
500
100
15
20
225
30
j.lmhos
ns
ns
ns
ns
All dimensions in inches (mm).
TOP VIEW
. 1 10 (2.80 )
. 1 18 (3.00)
.003(0.08)
.006(0.15)
.041 ( 1 .05)
f
J
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
+
-1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) SASE
2) EMITTER
3) COLLECTOR
R1
181
Central™
CMPT5086
CMPT5087
Semlconducto. Co.p.
PNP SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT5086, CMPT5087 types are PNP silicon
transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for applications
requiring high gain and low noise.
Marking Codes are C2P and C2Q
Respectively.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
VCBO
VCEO
VEBO
IC
PD
50
50
3.0
50
350
UNITS
V
V
V
mA
mW
T J,Tstg
8JA
-65 to +150
357
°c
°C/W
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
TEST CONDITIONS
VCB=10V
VCB=35V
IC=1001lA
IC=1.0mA
IE=1OOIlA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=5.0V,IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V,IC=10mA
VCE=5.0V, IC=500IlA, f=20MHz
VCB=5.0V, IE=O, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
CMPT5086
MIN MAX
10
50
50
50
3.0
0.30
0.85
150
500
150
150
40
4.0
150 600
CMPT5087
MIN MAX
10
50
50
50
3.0
0.30
0.85
250
800
250
250
40
4.0
250
900
UNITS
nA
nA
V
V
V
V
V
MHz
pF
182
--
-- -
---
-
SYMBOL
NF
NF
CMPT5086
MIN MAX
TEST CONDITIONS
VCE=5.0V, IC=20mA, RS=10kQ
f=10Hz to 15.7kHz
VCE=5.0V, 'C=100IlA, RS=3.0kQ,
f=1.0kHz
CMPT5087
MIN MAX
3.0
3.0
All dimensions in inches (mm).
2.0
2.0
UNITS
dB
dB
TOP VIEW
. 110 ( 2 . 80)
. 118 ( 3 . DO)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
NOMINAL
f
J
MAX IMUM
.106(2.70)
.047(1.19)
.063( 1.60)
MAXIMUM
1
~
lL::::=:=m==~
+
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
183
Central™
CMPT5088
CMPT5089
Semlconducto. CO....
NPN SILICON TRANSISTORS
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT5088, CMPT5089 types are NPN silicon
transistors manufactured by the epitaxial
planar process, epoxy molded in a surtkce
mount package, designed for applications
requiring high gain and low noise.
Marking Codes are C1 Q, C1 R
Respectively.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Sase Voltage
VCSO
Collector-Emitter Voltage
VCEO
Emitter-Sase Voltage
VESO
Collector Current
IC
Power Dissipation
PD
Operating and Storage
Junction Temperature
Thermal Resistance
CMPT5089
30
25
CMPT5088
35
30
4.5
50
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°CIW
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICSO
ICSO
IESO
IESO
SVCSO
SVCEO
SVESO
VCE(SAT)
VSE(SAT)
hFE
hFE
hFE
fT
Cob
TEST CONDITIONS
VCS=20V
VCS=15V
VES=3.0V
VES=4.5V
IC=1001lA
IC=1.0mA
IE=1OOIlA
IC=10mA, IS=1.0mA
IC=10mA, IS=1.0mA
VCE=5.0V,IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V,IC=10mA
VCE=5.0V, IC=500IlA, f=20MHz
VCS=5.0V, IE=O, f=1.0MHz
CMPT5088
MIN MAX
50
CMPT5089
MIN MAX
50
50
100
30
25
4.5
35
30
4.5
300
350
300
50
0.5
0.8
900
4.0
184
400
450
400
50
0.5
0.8
1200
4.0
UNITS
nA
nA
nA
nA
V
V
V
V
V
MHz
pF
SYMBOL
Cib
hfe
NF
TEST CONDITIONS
VBE=0.5V, IC=O, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100f.lA, Rs=10kn
f=10Hz to 15.7kHz
CMPT5088
MIN MAX
10
350 1400
CMPT5089
MIN MAX
10
450
1800
3.0
UNITS
pF
dB
2.0
All dimensions in inches (mm).
TOP VIEW
. 1 10 ( 2 . 80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
NOMINAL
f
.106(2.70)
J
MAX IMUM
MAXIMUM
-1
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
185
Central™
.
.
CMPT5179
SemlcOliduCtor Corll.
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT5179type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low nOise, high frequency
amplifjer and high output oscillator
applications.
Marking code is C7H.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
V
mA
mW
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
20
12
2.5
50
350
VCBO
VCEO
VEBO
IC
Po
-65 to +150
357
T J,Tstg
8JA
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
fT
Ccb
h'e
Gpe
NF
MIN
TEST CONDITIONS
VCB=15V
20
IC=10IJ,A
12
IC=3.0mA
2.5
IE=10IJ,A
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
25
VCE=1.0V, IC=3.0mA
900
VCE=6.0V, IC=5.0mA, f=100MHz
VCB=10V, IE=O, f=0.1 to 1.0MHz
25
VCE=6.0V, IC=2.0, f=1.0kHz
15
VCE=6.0V, IC=5.0mA, f=200MHz
VCE=6.0V, IC=1.5mA, RS=50Q, f=200MHz
186
TYP
MAX
20
0.4
1.0
UNITS
nA
V
V
V
V
V
1.0
MHz
pF
4.5
dB
dB
1450
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. , '8 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05)
NOMINAL
t
J
MAX IMUM
.106(2.70)
-1
·"r'
047 ( 1 . 19)
·063(1.60)
.
+
.037(0.94)
.050(1.26)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
187
Central™
CMPT5401
Semiconductor Cor••
PNP SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT5401 type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage amplifier applications.
Marking Code is C2L.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
mA
mW
160
150
5.0
500
350
VCBO
VCEO
VEBO
IC
Po
-65 to +150
357
°C
°C/w
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
TEST CONDITIONS
VCB=100V
VCB=100V, TA=150oC
IC=1001lA
IC=1.0mA
IE=1OIlA
IC=10mA, IB=1.0mA
IC=50mA,IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA,IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V,IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=O, f=1.0MHz
188
MIN
MAX
50
50
160
150
5.0
0.2
0.5
1.0
1.0
50
60
50
100
UNITS
nA
IlA
V
V
V
V
V
V
V
240
300
6.0
MHz
pF
SYMBOL
TEST CONDITIONS
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200f..lA, RS=10Q
f=10Hz to 15.7kHz
hfe
NF
MIN
MAX
40
200
8.0
UNITS
dB
All dimensions in inches (mm).
TOP VIEW
. 1 1 0 ( 2 . 80 )
. 1 1 8 ( 3 . 00 )
.003(0.08)
.006(0.15)
. 04 1 ( 1 . 05 )
NOMINAL
t
.106(2.70)
J
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
MAXIMUM
-1
1
L:':====f=7l===~
.l.
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
189
Central™
CMPT5551
Semiconductor Corll.
NPN SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT5551 type is an NPN silicon transistor
manufactured bythe epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage amplifier
applications.
Marking Code is 1FF.
SOT-23 CASE
MAXIMUM RATINGS (T A=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
180
160
6.0
600
350
UNITS
V
V
V
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS (T A=250C unless otherwise noted)
SYMBOL
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
TEST CONDITIONS
VCB=120V
VCB=120V,TA=100oC
IC= 1OO!-LA
IC=1.0mA
IE= 1O!-LA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V,IC=1.0mA
VCE=5.0V,IC=10mA
VCE=5.0V,IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=O, f=1.0MHz
190
MIN
MAX
50
50
180
160
6.0
V
0.15
0.20
1.00
1.00
80
80
30
100
UNITS
nA
!-LA
V
V
V
V
V
V
250
300
6.0
MHz
pF
SYMBOL
hfe
NF
TEST CONDITIONS
VCE=1 OV, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200IlA, RS=10Q
f=10Hz to 15.7kHz
MIN
50
MAX
200
B.O
All dimensions in inches (mm).
UNITS
dB
TOP VIEW
. 1 10 ( 2 . 80 )
.118(3.00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
f
J
MAXIMUM
.106(2.70)
MAXIMUM
-1
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
191
Cantral™
CMPT6427
Semiconductor Corp.
NPN SILICON
DARLINGTON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT6427 type is a NPN Silicon Darlington
Transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for applications
requiring extremely high gain.
Marking Code is C1 V.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
mA
mW
40
40
12
500
350
VCBO
VCEO
VEBO
IC
PD
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
ICEO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
TEST CONDITIONS
VCB=30V
VCE=25V
VBE=10V
IC=1001lA
IC=10mA
IE=1OIlA
IC=50mA,IB=0.5mA
IC=500mA, IB=0.5mA
IC=500mA, IB=0.5mA
VCE=5.0V,IC=50mA
VCE=5.0V,IC=10mA
VCE=5.0V,IC=100mA
VCE=5.0V, IC=500mA
VCE=5.0V, IC=10mA, f=100MHz
192
MIN
MAX
50
1.0
50
40
40
12
10K
20K
14K
130
1.20
1.50
2.00
1.75
100K
200K
140K
UNITS
nA
IlA
nA
V
V
V
V
V
V
V
MHz
SYMBOL
TEST CONDITIONS
VCB=10V, IE=O, f=1.0MHz
VBE=0.5V, IC=O, f=1.0MHz
VCE=5.0V, IC=1.0mA, RS=100kQ,
f=1.0kHz TO 15.7kHz
Cob
Cib
NF
MIN
MAX
7.0
15
UNITS
pF
pF
dB
10
All dimensions in inches (mm).
TOP VIEW
. 1 10 ( 2 .80 )
. 1 18 ( 3 .00 )
.003(0.08)
.006(0.15)
.041(1.05)
NOMINAL
f
J
MAXIMUM
.106(2.70)
MAXIMUM
-1
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
193
Central™
CMPT6428
CMPT6429
Semiconductor CO....
NPN SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT6428, CMPT6429 types are NPN Silicon
Transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for high gain
amplifier applications.
Marking Codes are C1 K and C1 L
Respectively.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
CMPT6428
60
50
CMPT6429
55
45
6.0
200
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
ICEO
lEBO
BVCBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
CMPT6428
MAX
TES1 CONDITIONS
MIN
10
VCB=30V
100
VCE=30V
10
VBE=5.0V
60
IC=1001lA
50
IC=1.0mA
0.20
IC=10mA, IB=0.5mA
0.60
IC=100mA, IB=5.0mA
0.56
0.66
VCE=5.0V, IC=1.0mA
250
VCE=5.0V,IC= 1OIlA
250
650
VCE=5.0V,IC=1OOIlA
250
VCE=5.0V,IC=1.0mA
250
VCE=5.0V,IC=10mA
700
VCE=5.0V, IC=1.0mA, f=1 OOMHz 100
194
CMPT6429
MIN
MAX
10
100
10
55
45
0.20
0.60
0.66
0.56
500
1250
500
500
500
100
700
UNITS
nA
nA
nA
V
V
V
V
V
MHz
SYMBOL
Cob
Cib
TEST CONDITIONS
V CB=1 OV, IE=O, f=1.0MHz
VBE=0.5V, IC=O, f=1.0MHz
CMPT6428
MIN
MAX
3.0
8.0
All dimensions in inches (mm).
CMPT6429
MIN
MAX
3.0
8.0
UNITS
pF
pF
TOP VIEW
. 1 1 0 ( 2 . 80 )
. 1 18 (3.00 )
.003(0.08)
.006(0.15)
.041 ( 1 .05)
f
J
MAX I MUM
.047 ( 1 . 19)
.063(1.60)
+
-1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
195
Central™
Samlconducto.
CMPT6517 NPN
CMPT6520 PNP
CO'II.
COMPLEMENTARY SILICON
HIGH VOLTAGE TRANSISTORS
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT6517, CMPT6520 types are
complementary
silicon
transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage driver and amplifier
applications.
Marking Codes are C1 Z and C2Z
Respectively.
SOT-23 CASE
MAXIMUM RATINGS (TA=25 0 C)
UNITS
V
V
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
350
350
5.0
500
250
350
VCBO
VCEO
VEBO
IC
IB
Po
V
mA
mA
mW
-65 to +150
357
°c
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
lEBO
lEBO
BVCBO
BVCEO
BVESO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VSE(SAT)
VBE(SAT)
TEST CONDITIONS
VCB=250V
VEB=5.0V (CMPT6517)
VEB=4.0V (CMPT6520)
IC=100flA
IC=1.0mA
IE=10flA (CMPT6517)
IE=10flA (CMPT6520)
IC=10mA, IB=1.0mA
IC=20mA, IB=2.0mA
IC=30mA, IS=3.0mA
IC=50mA, IS=5.0mA
IC=10mA, IB=1.0mA
IC=20mA,IB=2.0mA
196
MIN
MAX
50
50
50
350
350
6.0
5.0
0.30
0.35
0.50
1.0
0.75
0.85
UNITS
nA
nA
nA
V
V
V
V
V
V
V
V
V
V
TEST CONDITIONS
MIN
IC=30mA, IS=3.0mA
VCE=10V,IC=100mA
20
VCE=1 OV, IC=1.0mA
30
VCE=10V,IC=10mA
30
VCE=10V,IC=30mA
20
VCE=10V,IC=50mA
15
VCE=10V,IC=100mA
40
VCE=20V, IC=10mA, f=20MHz
VCS=20V, IC=O, f=1.0MHz
VES=0.5V, IE=O, f=1.0MHz (CMPT6517)
VES=0.5V, IE=O, f=1.0MHz (CMPT6520)
SYMBOL
VSE(SAT)
VSE(ON)
hFE
hFE
hFE
hFE
hFE
fT
Ccb
Ceb
Ceb
All dimensions in inches (mm).
MAX
0.90
2.0
UNITS
V
V
200
200
200
6.0
80
100
MHz
pF
pF
pF
TOP VIEW
. 1 10 (2.80 )
. 1 18 (3.00 )
.003(0.08)
.006(0.15)
.041(1.05)
NOMINAL
f
J
MAXIMUM
.106(2.70)
MAXIMUM
-1
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) SASE
2) EMITTER
3) COLLECTOR
R1
197
Central™
CMPT8099 NPN
CMPT8599 PNP
Semiconductor Corp.
COMPLEMENTARY
SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPT8099,
CMPT8599 types are
Complementary
Silicon
Transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for general purpose audio amplifier
applications.
Marking Codes are CKB and C2W
Respectively.
SOT·23 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
CMPT8099
80
80
6.0
VCBO
VCEO
VEBO
IC
CMPT8599
80
80
5.0
UNITS
V
V
V
mA
mW
500
350
Po
-65 to +150
357
TJ,Tstg
8JA
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
CMPT8099
SYMBOL
TEST CONDITIONS
MIN MAX
0.1
VCB=80V
ICBO
0.1
VBE=6.0V
lEBO
VBE=4.0V
lEBO
80
IC=100JlA
BVCBO
80
IC=10mA
BVCEO
6.0
IE=10JlA
BVEBO
0.4
IC=100mA,IB=5.0mA
VCE(SAT)
0.3
IC=100mA,IB=10mA
VCE(SAT)
0.6
0.8
VCE=5.0V,IC=10mA
VBE(ON)
100
300
VCE=5.0V,
IC=1.0mA
hFE
100
VCE=5.0V,IC=10mA
hFE
198
°C
°C/w
CMPT8599
MIN MAX
0.1
0.1
80
80
5.0
0.4
0.3
0.6 0.8
100 300
100
UNITS
JlA
JlA
JlA
V
V
V
V
V
V
SYMBOL
TEST CONDITIONS
VCE=5.0V,IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
VCS=10V, IE=O, f=1.0MHz
VSE=0.5V, IC=O, f=1.0MHz
hFE
fT
Cob
Cib
All dimensions in inches (mm).
CMPT8099
MIN MAX
75
150
6.0
25
CMPT8599
MIN MAX
75
150
4.5
30
UNITS
MHz
pF
pF
TOP VIEW
. 1 10 ( 2 . 80)
. 1 18 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
NOMINAL
f
J
MAXIMUM
.106(2.70)
MAXIMUM
.047(1.19)
.063(1.60)
*
1
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) SASE
2) EMITTER
3) COLLECTOR
R1
199
Cantral™
CMPTA06
CMPTA56
Semiconductor Carp.
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPTA06,
CMPTA56
types
are
complementary
silicon
transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose
and switching applications.
Marking Codes are C1 G, C2G
Respectively.
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
80
80
4.0
500
350
TJ,Tstg
8JA
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
ICEO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
hFE
fT
fT
TEST CONDITIONS
VCB=80V
VCE=60V
IC=1.0mA
IE= 1OOIlA
IC=100mA,IB=10mA
VCE=1.0V,IC=100mA
VCE=1.0V,IC=10mA
VCE=1.0V,IC=100mA
VCE=2.0V, IC=10mA, f=100MHz (CMPTA06)
VCE=1.0V, IC=100mA, f=100MHz(CMPTA56)
200
MIN
MAX
100
100
80
4.0
0.25
1.20
50
50
100
50
UNITS
nA
nA
V
V
V
V
MHz
MHz
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 .80 )
. 118 (3.00 )
.003(0.08)
.006(0.15)
.041(1.05)
NOMINAL
f
J
MAXIMUM
.106(2.70)
.047 ( 1 . 19)
.063(1.60)
MAXIMUM
-1
1
L===r=1~~
*
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
201
Central™
CMPTA13 CMPTA14 NPN
CMPTA63 CMPTA64 PNP
Semiconductor Corp.
SILICON COMPLEMENTARY
DARLINGTON TRANSISTORS
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPTA13, CMPTA63 series types are
complementary silicon Darlington transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for applications requiring extremely
high gain.
Marking Codes are C1 M, C1 N, C2U and
C2V Respectively_
SOT-23 CASE
MAXIMUM RATINGS (TA=25 0 C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
mA
mW
30
30
10
500
350
VCBO
VCES
VEBO
IC
PD
-65 to +150
357
°c
°C/W
ELECTRICAL CHARACTERISTICS (T A=250C unless otherwise noted)
SYMBOL
ICBO
lEBO
BVCES
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
TEST CONDITIONS
VCB=30V
VBE=10V
IC=1001lA
IC=100mA, IB=0.1 mA
VCE=5.0V,IC=100mA
VCE=5.0V, IC=10mA (CMPTA13, CMPTA63)
VCE=5.0V, IC=10mA (CMPTA14, CMPTA64)
VCE=5.0V, IC=100mA (CMPTA13, CMPTA63)
VCE=5.0V, IC=100mA (CMPTA14, CMPTA64)
VCE=5.0V, IC=10mA, f=100MHz
202
MIN
MAX
100
100
30
1.5
2.0
5,000
10,000
10,000
20,000
125
UNITS
nA
nA
V
V
V
MHz
All Dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 1 18 ( 3 . 00 )
.003(0.08)
.006(0.15)
.041(1.05)
f
J
MAXIMUM
.106(2.70)
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
+
1
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
203
Central™
CMPTA27
Samlconductor Cor••
SILICON DARLINGTON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPTA27 type is a Silicon Darlington
Transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
extremely high gain.
Marking Code is FG.
SOT-23 CASE
MAXIMUM RATINGS (T A=25°C)
UNITS
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
V
60
60
10
500
350
VCBO
VCES
VEBO
IC
Po
V
V
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICES
ICBO
lEBO
BVCES
BVCBO
VCE(SAT)
VBE(ON)
hFE
hFE
tr
TEST CONDITIONS
VCE=50V
VCB=50V
VBE=10V
MIN
IC=100~A
MAX
500
100
100
60
60
IC=100~A
1.5
2.0
IC=100mA, IB=0.1 mA
VCE=5.0V,IC=100mA
VCE=5.0V,IC=10mA
VCE=5.0V,IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
10,000
10,000
125
204
UNITS
nA
nA
nA
V
V
V
V
MHz
All dimensions in inches (mm).
TOP VIEW
. 110 (2.80 )
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
t
J
MAXIMUM
.106(2.70)
MAXIMUM
1
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
205
#-
Central™
CMPTA29
Semiconductor Carp.
HIGH VOLTAGE
NPN SILICON
DARLINGTON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPTA29 is a Silicon NPN Darlington
Transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
extremely high gain.
Marking Code is C29.
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
UNITS
VCBO
100
V
Collector-Emitter Voltage
VCES
100
V
Emitter-Base Voltage
VEBO
IC
12
V
500
rnA
mW
Collector Current
Power Dissipation
350
PD
Operating and Storage
Junction Temperature
T J,Tstg
Thermal Resistance
8JA
ELECTRICAL CHARACTERISTICS:
SYMBOL
-65 to +150
357
°c
°CIW
(TA=25°C)
MIN
TEST CONDITIONS
MAX
UNITS
ICES
VCE=80V
500
ICBO
VCB=80V
100
nA
lEBO
BVCES
VBE=10V
100
nA
IC=1001lA
100
V
BVCBO
IC=1001lA
100
V
BVEBO
IE= 1OIlA
12
V
VCE(SAT)
VCE(SAT)
IC=10mA,IB=1OIlA
IC=100mA, IB=100mA
1.2
1.5
V
V
VBE(ON)
VCE=5.0V,IC=100mA
2.0
V
206
nA
SYMBOL
TEST CONDITIONS
MIN
hFE
VCE=5.0V,IC=10mA
10,000
hFE
fT
VCE=5.0V,IC=100mA
10,000
Cob
VCB=10V, IE=O, f=1.0MHz
VCE=5.0V, IC=10mA, f=100MHz
MAX
UNITS
125
MHz
pF
8.0
All dimensions in inches (mm).
TOP VIEW
. 1 10 ( 2 .80 )
. 1 18 (3.00 )
.003(0.08)
.006(0.15)
.041 ( 1 .05)
f
~-1
MAXIMUM
.106(2.70)
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
207
Central™
CMPTA42 NPN
CMPTA92 PNP
Semiconductor Corp.
SILICON COMPLEMENTARY
HIGH VOLTAGE TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPTA42, CMPTA92
types are
complementary surface mount epoxy molded
silicon planar epitaxial transistors designed
for high voltage applications.
Marking Codes are C1 D, C2D
Respectively.
SOT-23 CASE
MAXIMUM RATINGS (T A=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
CMPTA42
300
300
6.0
CMPTA92
300
300
5.0
500
350
Po
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS (T A=250C unless otherwise noted)
SYMBOL
ICBO
lEBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
CMPTA42
TEST CONDITIONS
MIN MAX
100
VCB=200V
100
VBE=6.0V
VBE=3.0V
300
IC=1001lA
300
IC=1.0mA
6.0
IE= 1OOIlA
0.5
IC=20mA, IB=2.0mA
0.9
IC=20mA, IB=2.0mA
25
VCE=10V,IC=1.0mA
40
VCE=10V,IC=10mA
40
VCE=10V,IC=30mA
VCE=20V, IC=10mA, f=100MHz 50
3.0
VCB=20V, IE=O, f=1.0MHz
208
CMPTA92
MIN MAX
250
100
300
300
5.0
0.5
0.9
25
40
25
50
6.0
UNITS
nA
nA
nA
V
V
V
V
V
MHz
pF
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
.118 (3.00)
.003(0.08)
.006(0.15)
.041(1.05)
f
.106(2.70)
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
+
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
209
Central™
CMPTA44
Semlcanductar Carll.
NPN SILICON EXTREMELY
HIGH VOLTAGE TRANSISTOR
DESCRIPTION:
The CENTRALSEMICONDUCTOR CMPTA44
type is a surface mount epoxy molded silicon
planar epitaxial transistors designed for
extremely high voltage applications.
Marking Code is C3Z.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
VCBO
VCEO
VEBO
IC
PD
450
400
6.0
300
350
UNITS
V
V
V
mA
mW
TJ,Tstg
8JA
-65 to +150
357
°c
°C/W
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
ICES
lEBO
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
TEST CONDITIONS
VCB=400V
VCE=400V
VBE=4.0V
IC=100flA
IC=100flA
IC=1.0mA
IE= 1OflA
IC=1.0mA, IB=0.1 mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
VCE=10V,IC=1.0mA
VCE=10V,IC=10mA
MIN
MAX
100
500
100
450
450
400
6.0
0.40
0.50
0.75
0.75
40
50
210
200
UNITS
nA
nA
nA
V
V
V
V
V
V
V
V
SYMBOL
hFE
hFE
fT
Cob
Cib
TEST CONDITIONS
VCE=10V,IC=50mA
VCE=10V,IC=100mA
VCE=10V, IC=10mA, f=10MHz
VCB=20V, IE=O, f=1.0MHz
VEB=0.5V, IC=O, f=1.0MHz
MIN
45
20
20
All dimensions in inches (mm).
MAX
UNITS
7.0
130
MHz
pF
pF
TOP VIEW
. 1 10 ( 2 . 80)
. 1 18 ( 3 . 00)
.003(0.08)
.006(0.15)
.041(1.05)
t
J
MAXIMUM
.106(2.70)
MAXIMUM
-1
. 047 ( 1 . 19 )
.063(1.60)
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
211
Central™
Semiconductor Corll.
CMPTH10
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPTH1 0 type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low noise UHFNHF amplifier and
high output oscillator applications.
Marking code is C3E.
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
V
mW
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
30
25
3.0
350
VCBO
VCEO
VEBO
Po
-65 to +150
357
TJ,Tstg
8JA
°C
°CIW
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
hFE
fT
Ccb
Crb
rb'C c
TEST CONDITIONS
VCB=25V
VEB=2.0V
IC=1001lA
IC=1.0mA
IE= 10IlA
IC=4.0mA,IB=0.4mA
VCE=10V,IB=4.0mA
VCE=10V,IC=4.0mA
VCE=10V, IC=4.0mA, f=100MHz
VCB=10V, IE=O, f=1.0MHz
VCB=10V, IE=O, f=1.0MHz
VCB=10V, IC=4.0mA, f=31.8MHz
212
MIN
MAX
100
100
UNITS
nA
nA
V
V
V
30
25
3.0
0.50
0.95
60
650
0.70
0.65
9.0
V
V
MHz
pF
pF
ps
All dimensions in inches (mm).
TOP VIEW
. 1 1 0 ( 2 . 8 0)
. 1 1 8 ( 3 . 0 0)
.003(0.08)
.006(0.15)
.041(1.05)
NOMINAL
t
J
MAX IMUM
.106(2.70)
mi'"
-1
.047 ( 1 . 19)
.063(1.60)
+
037(0.94)
:050(1.28)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
213
Central™
CMPZ4619
THRU
CMPZ4627
Semiconductor Corp.
350mW LOW NOISE ZENER DIODE
DESCRIPTION:
The CENTRAL SEMIONDUCTOR CMPZ4619
Series Silicon Zener Diode is high quality
voltage regulator designed for low leakage,
low current and low noise applications.
SOT-23 CASE
ELECTRICAL CHARACTERISTICS
(TA=25°C) VF=1.0 MAX @ IF=200mA FOR ALL TYPES.
* Available on special order only, please consult factory.
214
All dimensions in inches (mm).
TOP VIEW
. 1 10 ( 2 . 80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
NOMINAL
f
J
MAX IMUM
106(2.70)
-1
."T""
. 047 ( 1 . 19 )
063(1.60)
---;::i::::c===:::::,J .
+
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
NO
CONNECTION
A
~~---T~
C
R1
215
Cantral™
Samlcanducto. CO....
CMPZ4683
THRU
CMPZ4714
DESCRIPTION:
350mW LOW LEVEL ZENER DIODE
The
CENTRAL
SEMICONDUCTOR
CMPZ4683 Series Silicon Zener Diode is a
high quality voltage regulator designed for
applications requiring an extremely low
operating current and low leakage.
SOT-23 Case
ELECTRICAL CHARACTERISTICS
(TA=25°C) VF=1.5V MAX @ IF=100mA FOR ALL TYPES .
• Available on special order only, please consult factory .
•• LlVZ=VZ@100~A MINUS Vz @ 10~A.
216
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 118 ( 3.00 )
.003(0.08)
.006(0.15)
.041 ( 1 .05 )
t
.106(2.70)
J
MAX IMUM
-1
.047 ( 1 . 19)
.083(1.60)
"T'"
*
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
A
NO
CONNECTION
-L-L---J~
C
R1
217
Central™
CMPZ5221B
THRU
CMPZ5261B
Semiconductor Carll.
350 mW ZENER DIODE
5% TOLERANCE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPZ5221 B
Series Silicon Zener Diode is a high quality voltage
regulator for use in industrial, commercial,
entertainment and computer applications. Higher
voltage devices are available on special order.
SOT-23 CASE
ABSOLUTE MAXIMUM RATINGS
Power Dissipation (@ T A =25 0 C)
Operating and Storage Temperature
350
-65 to + 175
218
UNITS
mW
°C
TOP VIEW
All dimensions in inches (mm).
. 110 ( 2 . 80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
t
.047 ( 1 . 19)
.063(1.60)
~==f~==~
MAXIMUM
-1
~
.037(0.94)
.050(1.28)
NO
CONNECTION
A
R1
219
Cantral™
CMPZDA3V6 THRU CMPZDA33V
Samlconductor Corp.
350mW DUAL ZENER DIODES
3.6 VOLTS THRU 33 VOLTS
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPZDA3V6 Series Silicon Dual Zener Diode
is a high quality vOltage regulator, connected
in a common anode configuration, for use in
industrial, commercial, entertainment and
computer applications.
SOT-23 CASE
ABSOLUTE MAXIMUM RATINGS
Power Dissipation (@TA=25°C)
Operating and Storage Temperature
Thermal Resistance
SYMBOL
Po
TJ,Tstg
8JA
350
-65 to +150
357
UNIT
mW
°c
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C), VF=0.9V MAX @ IF=10mA FOR ALL TYPES.
220
All dimensions in inches (mm).
TOP VIEW
. 110 ( 2 . 80)
. 118 ( 3 . 00)
.003(0.08)
.006(0.15)
.041(1.05)
NOMINAL
f
.106(2.70)
J
MAXIMUM
.047 ( 1 . 19)
.063(1.60)
MAXIMUM
-1
*
1
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
C2
C1
A1, A2
R1
221
Central™
CMR1-02
CMR1-04
CMR1-06
CMR1-10
Semiconductor Corll.
FEATURES:
GENERAL PURPOSE RECTIFIER
1.0 AMP, 200 THRU 1 000 VOLTS
• LOW COST
• HIGH RELIABILITY
• SPECIAL SELECTIONS AVAILABLE
• GLASS PASSIVATED CHIP
• SUPERIOR LOT TO LOT CONSISTENCY
• "C" BEND CONSTRUCTION PROVIDES
STRAIN RELIEF WHEN MOUNTED ON PC
BOARD
5MB CASE
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.0 Amp Surface Mount Silicon Rectifier is a
high quality, well constructed, highly reliable component designed for use in all types of
commercial, industrial, entertainment, computer, and automotive applications. To order devices
on 12mm Tape and Reel (3000/13" Reel), add TR13 suffix to part number.
MAXIMUM RATINGS: (TA=25 0 C unless otherwise noted)
SYMBOL CMR1-02 CMR1-04 CMR1-06
Peak Repetitive Reverse Voltage
200
400
600
VRRM
DC Blocking Voltage
200
400
600
VR
140
280
420
RMS Reverse Voltage
VR(RMS)
Average Forward Current(T A=75°C) 10
1.0
Peak Forward Surge Current (8.3ms) IFSM
30
Operating and Storage
Junction Temperature
-65 to +175
TJ,Tstg
Thermal Resistance
20
8JL
CMR1-10 UNITS
1000
V
1000
V
700
V
A
A
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=250C unless otherwise noted)
TEST CONDITIONS
IF=1.0A
VR=Rated VRRM
VR=Rated VRRM, T A=125 0 C
222
MIN
MAX
1.1
10
50
UNITS
V
IlA
IlA
All dimensions in inches (mm).
TOP VIEW
f
T
.030(0.76)
.060(1.52)
t
.004(0.10)
.008(0.20)
.160(4.06)
.200(5.08)
.220(5.59)
'--r----.---'I
.006(0.15)
.012(0.30)
.077(1.96)
. 0 B3 ( 2 . 1 1 )
.086(2.18)
.130(3.30)
.096(2.44)
. 150 ( 3 . 81 )
Marking Codes:
DEVICE
MARKING CODE
CMR1-02
CO2
CMR1-04
C04
CMR1-06
C06
CMR1-10
C10
R1
223
Central™
CMR1U-01
CMR1U-02
CMR1U-04
#CMR1U-06
Samlconductor Corp.
FEATURES:
ULTRA FAST RECOVERY RECTIFIER
1.0 AMP 100 THRU 600 VOLTS
•
•
•
•
LOWCOST
SPECIAL SELECTIONS AVAILABLE
HIGH RELIABILITY
SUPERIOR LOT TO LOT
CONSISTENCY
• GLASS PASSIVATED CHIP
• "C" BEND CONSTRUCTION PROVIDES
STRAIN RELIEF WHEN MOUNTED ON
PC BOARD
5MB CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1.0 Amp Surface Mount Silicon Ultra Fast Recovery Rectifier is c
high quality, well constructed, highly reliable component designed for use in all types of commercial
industrial, entertainment, computer, and automotive applications. To order devices on 12mm Tape anc
Reel (3000/13" Reel), add TR13 suffix to part number.
MAXIMUM RATINGS: (TA=250C unless otherwise noted)
SYMBOL
CMR1 U
-01
100
Peak Repetitive Reverse Voltage
VRRM
100
DC Blocking Voltage
VR
70
RMS Reverse Voltage
VR(RMS)
Average Forward Current(T A=75°C) 10
Peak Forward Surge Current (8.3ms) IFSM
Operating and Storage
Junction Temperature
Thermal Resistance
CMR1 U
-02
200
200
140
CMR1U
-04
400
400
280
CMR1U
-06
600
600
420
1.0
30
-65 to +175
20
UNITS
V
V
V
A
A
°C
°CIW
ELECTRICAL CHARACTERISTICS: (TA=250C unless otherwise noted)
SYMBOL
IR
IR
VF
VF
VF
trr
trr
TEST CONDITIONS
MIN
VR=Rated VRRM
VR=Rated VRRM, TA=125OC
IF=1.0A, (CMR1 U-01, CMR1 U-02)
IF=1.0A, (CMR1 U-04)
IF=1.0A, (CMR1 U-06)
IF=0.5A, IR=1.0A, Recover to 0.25A (CMR1 U-01, -02, -04)
IF=0.5A, IR=1.0A, Recover to 0.25A (CMR1 U-06)
224
MAX
5.0
100
1.00
1.25
1.40
50
100
UNITS
flA
flA
V
V
V
ns
ns
All dimensions in inches (mm).
TOP VIEW
f
.030(0.76)
.060(1.52)
T
+
.004(0.10)
.008(0.20)
.200(5.08)
.220(5.59)
.160(4.06)
'---r----.----'
.006(0.15)
.012(0.30)
.077(1.96)
I
.083 ( 2 . 1 1 )
.086(2.18)
.096(2.44)
.130(3.30)
. 150 ( 3 . 81 )
Marking Codes:
CMR1U-01
CU01
CMR1U-02
CU02
CMR1U-04
CU04
CMR1U-06
CU06
R1
225
Cantral™
CMR3-02
CMR3-04
CMR3-06
CMR3-10
Semiconductor Corll.
FEATURES:
GENERAL PURPOSE RECTIFIER
3.0 AMP. 200 THRU 1 000 VOLTS
• LOWCOST
• SPECIAL SELECTIONS AVAILABLE
• HIGH RELIABILITY
• SUPERIOR LOT TO LOT
CONSISTENCY
• GLASS PASSIVATED CHIP
• "C" BEND CONSTRUCTION
PROVIDES STRAIN RELIEF WHEN
MOUNTED ON PC BOARD
SMCCASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 3.0 Amp Surface Mount Silicon Rectifier is a high quality, well
constructed,highly reliable component designed for use in all types of commercial, industrial, entertainment,
computer, and automotive applications. To order devices on 16mm Tape and Reel (3000/13" Reel), add
TR13 suffix to part number.
MAXIMUM RATINGS: (TA=250C unless otherwise noted)
SYMBOL CMR3-02
Peak Repetitive Reverse Voltage
200
VRRM
DC Blocking Voltage
200
VR
RMS Reverse Voltage
VR(RMS) 140
Average Forward Current(TA=75°C) 10
Peak Forward Surge Current (8.3ms) IFSM
Operating and Storage
Junction Temperature
Thermal Resistance
CMR3-04
400
400
280
CMR3-06
600
600
420
3.0
200
CMR3-10 UNITS
V
1000
V
1000
V
700
A
A
-65 to +175
10
ELECTRICAL CHARACTERISTICS: (TA=250C unless otherwise noted)
TEST CONDITIONS
IF=3.0A
VR=Rated VRRM
VR=Rated VRRM, T A=1250C
MIN
226
MAX
1.2
5.0
250
UNITS
V
Il A
IlA
All dimensions in inches (mm).
TOP VIEW
f
T
.030(0.76)
.060(1.52)
•
.004(0.10)
.008(0.20)
.260(6.60)
.305(7.75)
.320(8.13)
'---r---.,.---'
.006(0.15)
.012(0.30)
.115(2.92)
. 121 ( 3 .07 )
.220(5.59)
.079(2.01)
.103(2.62)
.245(6.22)
Marking Codes:
DEVICE
MARKING CODE
CMR3-02
C302
CMR3-04
C304
CMR3-06
C306
CMR3-10
C310
227
I
Cantral™
semlcanducta. Ca'il.
CMR3U-01
CMR3U-02
CMR3U-04
CMR3U-06
FEATURES:
ULTRA FAST RECOVERY RECTIFIER
3.0 AMP 100 THRU 600 VOLTS
•
•
•
•
LOWCOST
SPECIAL SELECTIONS AVAILABLE
HIGH RELIABILITY
SUPERIOR LOT TO LOT
CONSISTENCY
• GLASS PASSIVATED CHIP
• "C" BEND CONSTRUCTION PROVIDES
STRAIN RELIEF WHEN MOUNTED ON
PC BOARD
SMCCASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 3.0 Amp Surface Mount Silicon Ultra Fast Recovery Rectifier is a
high quality, well constructed, highly reliable component designed for use in all types of commercial,
industrial, entertainment, computer, and automotive applications. To order devices on 16mm Tape and
Reel (3000/13" Reel), add TR13 suffix to part number.
MAXIMUM RATINGS: (TA=250C unless otherwise noted)
SYMBOL
CMR3U
-01
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current(TA=75°C)
Peak Forward Surge Current (8.3ms)
Operating and Storage
Junction Temperature
Thermal Resistance
VRRM
VR
VR(RMS)
10
'FSM
100
100
70
CMR3U
-02
200
200
140
CMR3U
-04
400
400
280
CMR3U
--=OL UNITS
V
V
V
A
A
600
600
420
3.0
150
-65 to +175
10
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=250C unless otherwise noted)
SYMBOL
'R
'R
VF
VF
VF
trr
trr
TEST CONDITIONS
MIN
VR=Rated VRRM
VR=Rated VRRM, TA=100oC
'F=3.0A, (CMR3U-01, CMR3U-02)
'F=3.0A, (CMR3U-04)
'F=3.0A, (CMR3U-06)
'F=500mA, 'R=1.0A, Irr=250mA (CMR3U-01, -02, -04)
'F=500mA, 'R=1.0A, Irr=250mA (CMR3U-06)
228
MAX
5.0
500
1.00
1.25
1.40
50
100
UNITS
flA
flA
V
V
V
ns
ns
All dimensions in inches (mm).
TOP VIEW
f
T
.030(0.76)
.060(1.52)
t
.004(0.10)
.008(0.20)
.260(6.60)
.305(7.75)
.320(8.13)
'---r-------r--'
.006(0.15)
.012(0.30)
. 1 15 ( 2.92 )
. 121 ( 3 . 07)
.220(5.59)
.079(2.01)
.103(2.62)
.245(6.22)
Marking Codes:
CMR3U-01
CU301
CMR3U-02
CU302
CMR3U-04
CU304
CMR3U-06
CU306
229
I
#-
Central™
CMSD4448
Semiconductor Corp.
SUPER-MINI
HIGH SPEED
SWITCHING DIODE
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMSD4448 type is a ultra-high speed silicon
switching diode manufactured by the epitaxial
planar process, in an epoxy molded supermini surface mount package, designed for
high speed switching applications.
mini
SOT-323 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 Ilsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VRRM
IF
IFRM
IFSM
IFSM
PD
75
100
250
250
4000
1000
250
UNITS
V
V
mA
mA
mA
mA
mW
TJ,Tstg
8JA
-65 to +150
500
°C
°C/W
VR
ELECTRICAL CHARACTERISTICS: (TA=250C unless otherwise noted)
SYMBOL
VSR
VSR
IR
VF
VF
CT
trr
TEST CONDITIONS
MIN
75
IR=5.0IlA
100
IR= 1OOIlA
VR=20V
0.62
IF=5.0mA
IF=100mA
VR=O, f=1 MHz
IR=IF=10mA, RL=1 oon, Rec. to 1.0mA
230
MAX
25
0.72
1.0
4.0
4.0
UNITS
V
V
nA
V
V
pF
ns
All dimensions in inches (mm).
TOP VIEW
.063(1.60)
.087(2.22)
.003(0.08)
.006(0. 15)
~
]
r004(0.10)
.010(0.25)
------,,------t-
1
f
100~
J
MAXIMUM
.079(2.00)
087(222)
. j
-1
~II====~~====~
.045(1.14)
.053(1.35)
.008(0.20)
.016 ( 0 . 41 )
.031(0.79)
.039(1.00)
A
NO
CONNECTION
C
231
*
Cantral™
Semlconducto. Co.p.
CMSH1-20
CMSH1-40
CMSH1-60
FEATURES:
SCHOTTKY BARRIER RECTIFIER
•
•
•
•
LOW COST
HIGH RELIABILITY
GLASS PASSIVATED CHIP
SPECIAL SELECTIONS AVAILABLE
• SUPERIOR LOT TO LOT CONSISTENCY
• "C" BEND CONSTRUCTION PROVIDES
STRAIN RELIEF WHEN MOUNTED ON
PC BOARD
5MBCASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1.0 Amp Surface Mount Silicon Schottky Rectifier is a high quality,
well constructed, highly reliable component designed for use in all types of commercial, industrial,
entertainment, computer, and automotive applications. To order devices on 12mm Tape and Reel
(3000/13" Reel), add TR13 suffix to part number.
MAXIMUM RATINGS:
(TA=25 0 C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current(T A=75 0 C)
Peak Forward Surge Current (8.3ms)
Operating and Storage
Junction Temperature
Thermal Resistance
VRRM
VR
VR(RMS)
10
IFSM
CMSH1-20
20
20
14
CMSH1-40 CMSH1-60 UNITS
40
60
V
V
40
60
V
28
42
1.0
A
30
A
-65 to +150
20
TJ,Tstg
8JL
°C
°C/W
ELECTRICAL CHARACTERISTICS: (T A=25 0 C unless otherwise noted)
SYMBOL
VF
VF
IR
IR
CJ
CJ
TEST CONDITIONS
IF=1.0A (CMSH1-20 AND CMSH1-40)
IF=1.0A (CMSH1-60)
VR=Rated VRRM
VR=Rated VRRM, T A=125 0 C
VR=4.0V, f=1.0MHz, (CMSH1-20 AND CMSH1-40)
V R=4.0V, f=1.0MHz, (CMSH 1-60)
232
MIN
TYP
110
80
MAX
0.55
0.70
0.50
10
UNITS
V
V
mA
mA
pF
pF
All dimensions in inches (mm).
TOP VIEW
f
.030(0.76)
.060(.1.52)
.004(0.10)
.008(0.20)
.200(5.08)
.220(5.59)
.006(0.15)
.012(0.30)
T
.160(4.06)
~~--------~~
.077(1.96)
.083(2.11)
.130(3.30)
.086(2.18)
.096(2.44)
. 150 ( 3 .81 )
Marking Codes:
CMSH1-20
CS20
CMSH1-40
CS40
CMSH1-60
CS60
R1
233
#
Central™
Semiconductor Corp.
CMSH2-40
FEATURES:
SCHOTTKY BARRIER RECTIFIER
2.0 AMP, 40 VOLTS
• EXTREMELY LOW FORWARD VOLTAGE
DROP
•
•
•
•
•
•
5MBCASE
LOW COST
HIGH RELIABILITY
GLASS PASSIVATED CHIP
SPECIAL SELECTIONS AVAILABLE
SUPERIOR LOT TO LOT CONSISTENCY
"C" BEND CONSTRUCTION PROVIDES
STRAIN RELIEF WHEN MOUNTED ON
PC BOARD
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2.0 Amp Surface Mount Silicon Schottky Rectifier is a high quality,
well constructed, highly reliable component designed for use in all types of commercial, industrial,
entertainment, computer, and automotive applications. To order devices on 12mm Tape and Reel (3000/
13" Reel), add TR13 suffix to part number.
MAXIMUM RATINGS:
(TA=250C unless otherwise noted)
IFSM
40
40
28
2.0
50
UNITS
V
V
V
A
A
TJ,Tstg
8JL
-65 to +150
20
°C
°CIW
SYMBOL
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current(T L=1 05 O C)
Peak Forward Surge Current (8.3ms)
Operating and Storage
Junction Temperature
Thermal Resistance
VRRM
VR
VR(RMS)
10
ELECTRICAL CHARACTERISTICS: (TA=250C unless otherwise noted)
SYMBOL
VF
VF
IR
IR
CJ
TEST CONDITIONS
IF=1.0A
IF=2.0A
VR=40V
VR=40V, TA=1 OOoC
VR=4.0V, f=1.0MHz
MIN
TYP
0.41
0.45
0.10
200
MAX
0.50
0.55
0.50
20
UNITS
V
V
mA
mA
pF
234
----
All dimensions in inches (mm).
TOP VIEW
f
,030(0.76)
.060(1.52)
t
,004(0.10)
.008(0.20)
T
I
,160(4,06)
.200(5.08)
.220(5.59)
'---r-----,-.006(0.15)
.012(0.30)
.077(1.96)
.083(2.11)
.130(3.30)
.086(2.18)
.096(2.44)
.150(3.81)
Marking Codes:
DEVICE
MARKING CODE
CMSH2-40
CS240
235
Central™
CMSH3·20
CMSH3·40
CMSH3·60
Semiconductor Corll.
SCHOTTKY BARRIER RECTIFIER
3.0 AMP, 20 THRU 60 VOLTS
FEATURES:
• LOWCOST
• SUPERIOR LOT TO LOT
CONSISTENCY
• HIGH RELIABILITY
• "C" BEND CONSTRUCTION PROVIDES
STRAIN RELIEF WHEN MOUNTED ON
PC BOARD
• SPECIAL SELECTIONS AVAILABLE
SMCCASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 3.0 Amp Surface Mount Silicon Schottky Rectifier is a high quality,
well constructed, highly reliable component designed for use in all types of commercial, industrial,
entertainment,computer, and automotive applications. To order devices on 16mm Tape and Reel (3000/
13" Reel), add TR13 suffix to part number.
MAXIMUM RATINGS: (TA=250C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current(TA=75°C)
Peak Forward Surge Current (8.3ms)
Operating and Storage
Junction Temperature
Thermal Resistance
CMSH3·20
20
VRRM
20
VR
14
VR(RMS)
10
UNITS
V
V
V
A
A
IFSM
°c
°C/W
SYMBOL
IR
IR
VF
VF
CMSH3·40
40
MIN
TYP
M
VRRM, TA=100oC
.OA (CMSH3-20 AND CMSH3-40)
IF=3.0A (CMSH3-60)
236
MAX
500
20
0.50
0.70
UNITS
IJ.A
mA
V
V
All dimensions in inches (mm).
TOP VIEW
f
T
.030(0.76)
.060(1.52)
..
.004(0.10)
.008(0.20)
.260(6.60)
.305(7.75)
.320(8.13)
'-r----....,...-JI
.006(0.15)
.012(0.30)
. 1 15 ( 2 . 92)
. 121 ( 3 . 07)
.220(5.59)
.079(2.01)
.103(2.62)
.245(6.22)
Marking Codes:
CMSH3-20
CS320
CMSH3-40
CS340
CMSH3-60
CS360
237
#-
Central™
Semiconductor Carll.
CMST2222A
SUPER-MINI
NPN SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMST2222A type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a super-mini surface mount
package, designed for small signal general
purpose and switching applications.
SOT-323 CASE
MAXIMUM RATINGS: (TA=25°C)
75
40
6.0
600
250
UNITS
V
V
V
mA
mW
-65 to +150
500
°c
°CIW
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
Po
ELECTRICAL CHARACTERISTICS: (TA=250C unless otherwise noted)
SYMBOL
ICBO
ICBO
lEBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
MIN
VCB=60V
VCB=60V,TA=1250C
VEB=3.0V
VCE=60V, VEB=3.0V
IC=10J.lA
IC=10mA
IE=10J.lA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VCE=10V,IC=0.1mA
VCE=10V,IC=1.0mA
VCE=10V,IC=10mA
UNITS
nA
MAX
10
10
10
10
J.lA
nA
nA
V
V
V
V
V
V
V
75
40
6.0
0.6
0.3
1.0
1.2
2.0
35
50
75
238
-
-- -
-
-
SYMBOL
hFE
hFE
hFE
fT
Cob
Cib
hie
hie
h re
h re
hfe
hfe
hoe
hoe
rb'C c
NF
td
tr
ts
tf
TEST CONDITIONS
VCE=10V, 'C=150mA
VCE=1.0V, 'C=150mA
VCE=10V, 'C=500mA
VCE=20V, 'C=20mA, f=100MHz
VCS=10V, 'E=O, f=1.0MHz
VES=0.5V, 'C=O, f=1.0MHz
VCE=10V, 'C=1.0mA, f=1.0kHz
VCE=10V, 'C=10mA, f=1.0kHz
V CE=1 OV, 'C=1.0mA, f=1.0kHz
VCE=10V, 'C=10mA, f=1.0kHz
V CE=1 OV, 'C=1.0mA, f=1.0kHz
VCE=10V, 'C=10mA, f=1.0kHz
VCE=10V, 'C=1.0mA, f=1.0kHz
VCE=10V, 'C=10mA, f=1.0kHz
VCS=10V, 'E=20mA, f=31.8MHz
V CE=1 OV, 'C=100mA, RS=1.0kn, f=1.0kHz
VCC=30V, VSE=0.5, 'C=150mA, 'S1=15mA
V CC=30V, VSE=0.5, 'C=150mA, 'S1 =15mA
VCC=30V, 'C=150mA, 'S1='S2=15mA
VCC=30V, 'C=150mA, 'S1='S2=15mA
All dimensions in inches (mm).
MIN
100
50
40
300
MAX
300
UNITS
MHz
pF
pF
kn
kn
x10- 4
x10- 4
8.0
25
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
10
25
225
60
2.0
0.25
50
75
5.0
25
}.1mhos
}.1mhos
ps
dS
ns
ns
ns
ns
TOP VIEW
.063(1.60)
.087(2.22)
.003(0.08)
.006(0.15)
~
]
r004(0'10)
.010(0.25)
--....----j-
1
t
10'~
. 1 l2===i"~==~
.079(2.00)
087(222)
~~~,.-:
MAXIMUM
~
.045(1.14)
.053(1.35)
.008(0.20)
. 0 16 ( 0 . 4 1 )
.031(0.79)
.039(1.00)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
239
*
#-
Cantral™
Semlconducto.
CO'II.
CMST2907A
SUPER-MINI
PNP SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMST2907A type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a super-mini surface mount
package, designed for small signal general
. purpose and switching applications.
SOT-323 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
VCSO
VCEO
VESO
IC
Po
60
60
5.0
600
250
TJ,Tstg
-65 to +150
500
8JA
V
V
mA
mW
.CTRICAL CHARACTERISTICS: (TA=250C unless otherwise noted)
SYMBOL
ICSO
ICSO
ICEV
SVCSO
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
TEST CONDITIONS
MIN
VCS=50V
VCS=50V,TA=1250C
VCE=30V, VSE=0.5V
IC=10IlA
IC=10mA
IE= 1OIlA
IC=150mA,IS=15mA
IC=500mA,IS=50mA
IC=150mA,IS=15mA
IC=500mA,IS=50mA
VCE=10V,IC=0.1mA
VCE=10V,IC=1.0mA
MAX
10
10
50
60
60
5.0
0.4
1.6
1.3
2.6
75
100
240
UNITS
nA
IlA
nA
V
V
V
V
V
V
V
SYMBOL
hFE
hFE
hFE
fT
Cob
Cib
ton
td
tr
toft
ts
tf
TEST CONDITIONS
VCE=10V,IC=10mA
VCE=10V,IC=150mA
VCE=10V,IC=500mA
VCE=20V, IC=50mA, f=100MHz
VCS=10V, IE=O, f=1.0MHz
VSE=2.0V, IC=O, f=1.0MHz
VCC=30V, VSE=0.5, IC=150mA, IS1=15mA
VCC=30V, VSE=0.5, IC=150mA, IS1=15mA
VCC=30V, VSE=0.5, IC=150mA, IS1=15mA
VCC=6.0V, Ic=150mA, IS1=IS2=15mA
VCC=6.0V, IC=150mA, IS1=IS2=15mA
VCC=6.0V, Ic=150mA, IS1=IS2=15mA
All dimensions in inches (mm).
MAX
MIN
100
100
50
200
300
MHz
pF
pF
ns
ns
ns
ns
ns
ns
8.0
30
45
10
40
100
80
30
TOP VIEW
.063(1.60)
.OB7(2.22)
.003(0.OB)
.006(0.15)
~
jr004(0'10)
.010(0.25)
----x--_+_
1
t
.079(2.00)
OB7(222)
. j
I
===r=t==~
.045(1.14)
.053(1.35)
Id::I
.00B(0.20)
.016 (0.41 )
.031(0.79)
.039(1.00)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
241
UNITS
*
~
..
Central™
CMST3904 NPN
CMST3906 PNP
5ellliconductor Carp.
SUPER-MINI
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMST3904, CMST3906 types are
complementary
silicon
transistors
manufactured by the epitaxial planar process,
epoxy molded in a super-mini surface mount
package, designed for small signal general
purpose amplifier and switching applications.
mini
SOT-323 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCSO
VCEO
VESO
IC
CMST3904
60
40
6.0
200
250
UNITS
V
V
V
mA
mW
-65 to +150
500
°C
°C/W
Po
ELECTRICAL CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
ICEV
SVCSO
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
hFE
VCE=30V, VES=3.0V
IC=10)lA
IC=1.0mA
IE=10)lA
IC=10mA, IS=1.0mA
IC=50mA, IS=5.0mA
IC=10mA, IS=1.0mA
IC=50mA,IS=5.0mA
VCE=1.0V, IC=0.1 mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
CMST3906
40
40
5.0
(TA=250C unless otherwise noted)
CMST3904
MIN MAX
50
60
40
6.0
0.20
0.30
0.65
0.85
0.95
40
70
100
242
300
CMST3906
MIN MAX
50
40
40
5.0
0.25
0.40
0.85
0.65
0.95
60
80
100
300
UNITS
nA
V
V
V
V
V
V
V
SYMBOL
hFE
hFE
fT
Cob
Cib
hie
h re
hfe
hoe
NF
td
tr
ts
tf
CMST3904
TEST CONDITIONS
MIN MAX
60
VCE=1.0V,IC=50mA
30
VCE=1.0V, IC=100mA
300
VCE=20V, IC=10mA, f=100MHz
4.0
VCS=5.0V, IE=O, f=1.0MHz
8.0
VSE=0.5V, IC=O, f=1.0MHz
1.0
10
VCE=1 OV, IC=1.0mA, f=1.0kHz
0.5
8.0
VCE=10V, IC=1.0mA, f=1.0kHz
100 400
VCE=10V, IC=1.0mA, f=1.0kHz
40
1.0
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100mA, RS=1.0kQ
f=10Hz to 15.7kHz
5.0
35
VCC=3.0V, VSE=0.5, IC=10mA, IS1=1.0mA
35
VCC=3.0V, VSE=0.5, IC=10mA, IS1 =1.0mA
200
VCC=3.0V, IC=10mA, IS1=IS2=1.0mA
50
VCC=3.0V, IC=10mA, IS1=IS2=1.0mA
All dimensions in inches (mm).
.003(0.08)
.006(0.1.5)
rj
CMST3906
MIN MAX
60
30
250
4.5
10
12
2.0
0.1
10
100
400
3.0
60
/-lmhos
4.0
35
35
225
75
dS
ns
ns
ns
ns
TOP VIEW
.063(1.60)
.087(2.22)
rT,00~4(0.10)
.010(0.25)
-----r-_+_
1
f
.045 ( 1 . 14)
.053(1.35)
~
.008(0.20)
.016 ( 0 . 41)
.031(0.79)
.039(1.00)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
243
UNITS
MHz
pF
pF
kQ
x10- 4
Central™
Semlcanductor Corp.
CQ898
CQ890
CQ89M
CQ89N
2.0 AMP TRIAC
200 THRU SOO VOLTS
DESCRIPTION:
The CENTRAL SEMICONOUCTOR CQ898
series types are epoxy molded silicon triacs
designed for full wave AC control applications
featuring gate triggering in all four (4)
quadrants.
SOT-S9 CASE
MAXIMUM RATINGS (TC=25°C)
SYMBOL
CQS9B
Peak Repetitive Off-State Voltage
VORM
200
RMS On-State Current (TC=800C)
Peak One Cycle Surge (10ms)
Peak Gate Current
IT(RMS)
ITSM
IGM
Average Gate Power Oissipation
PG(AV)
StorageTemperature
Junction Temperature
Tstg
TJ
Thermal Resistance
8J-C
CQS9D
400
CQS9M
600
CgS9N
800
UNITS
V
2.0
A
10
A
1.0
A
0.1
W
-45 to +150
°C
-45 to +125
10
°C
°C/W
ELECTRICAL CHARACTERISTICS (TC=250C unless otherwise noted)
SYMBOL
IORM
TEST CONDITIONS
MIN
VO=Rated VORM
VO=Rated VORM, TC=1250C
VO=12V, QUAO I, II, III, IV
TYP
MAX
UNITS
5.00
IlA
IlA
mA
mA
200
IORM
IGT
IH
VO=12V
25
25
VGT
VO=12V
2.00
V
VTM
dv/dt
IT=3.0A
1.75
V
100
VO=%VORM' TC=1250C
244
V/IlS
.i
I
All dimensions in inches (mm).
BOTTOM VIEW
.173(4.39)
. 181 ( 4 . 60)
J
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
---.---+--
r
.092(2.34)
.100(2.54)
. 154 ( 3.91 )
. 165 ( 4 . 19)
6 ,------------
.015(0.38)
.016 ( 0 . 41)
1
~
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 118 ( 3 .00 )
LEAD CODE:
1) GATE
2) MT2
3) MT1
R1
245
Central™
CQ89BS
CQ89DS
CQ89MS
CQ89NS
Semlconducto. CO....
2.0 AMP TRIAC
200 THRU SOO VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CQB9BS series types are epoxy molded
silicon triacs designed for full wave AC
control applications featuring gate
triggering in all four (4) quadrants.
SOT-S9 CASE
MAXIMUM RATINGS (TC=25°C)
SYMBOL
Peak Repetitive Off-State Voltage
VORM
RMS On-State Current (TC=BOOC)
Peak One Cycle Surge (10ms)
IT(RMS)
ITSM
Peak Gate Current
IGM
Average Gate Power Dissipation
StorageTemperature
Junction Temperature
CQS9BS CQS9DS
200
400
PG(AV)
Tstg
TJ
Thermal Resistance
CQS9MS
600
CQS9NS
BOO
2.0
A
10
A
1.0
A
0.1
W
-45 to +150
°c
-45 to +125
°c
10
8J-C
UNITS
V
°C/W
ELECTRICAL CHARACTERISTICS (TC=250C unless otherwise noted)
SYMBOL
TEST CONDITIONS
IORM
VO=Rated VORM
VO=Rated VORM, TC=125OC
VO=12V, QUAD I, II, III, IV
IORM
IGT
IH
VGT
VTM
dV/dt
MIN
TYP
MAX
5.0
UNITS
j.!A
200
j.!A
5.0
rnA
VO=12V
5.0
mA
VO=12V
IT=3.0A
2.0
V
1.75
V
30
VO=%VORM' TC=1250C
246
V/j.!s
All dimensions in inches (mm).
BOTTOM VIEW
.173(4.39)
. 181 ( 4 . 60)
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
i
.092(2.34)
.100(2.54)
. 154 ( 3 . 9 1 )
. 165 ( 4 . 19)
1
6 .---------------
.015(0.38)
.016 ( 0 .41 )
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 118 ( 3.00 )
LEAD CODE:
1) GATE
2) MT2
3) MT1
247
Central™
Semlconducto.
CSH03-40
CO'II.
SCHOTTKY RECTIFIER
SINGLE, 3.0 AMPS, 40 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CSHD3-40, Silicon Schottky Rectifier is a high
quality, well constructed, highly reliable
component. designed for use in all types of
commercial, industrial, entertainment,
computer and automative applications.
DPAK CASE
MAXIMUM RATINGS: (TC=250 C unless otherwise noted)
SYMBOL
Peak Working Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC=1250 C)
Peak Repetitive Forward Current (TC=125 0 C)
Peak Forward Surge Current
Peak Repetitive Reverse Surge Current (tp=2 Ils)
Operating and Storage
Junction Temperature
Thermal Resistance
VRWM
VR
10
IFRM
IFSM
IRRM
40
UNITS
V
V'l
A
A
A
A
°c
°CIW
ELECTRICAL CHARACTERI~T~S: (
)
,
SYMBOL
IR
IR
VF
VF
VF
VF
MIN
, C=125 0 C
IF .OA
IF=3.0A, T C=1250 C
IF=6.0A
IF=6.0A, TC=125 0 C
248
MAX
200
20
0.60
0.45
0.70
0.625
UNITS
JlA
mA
V
V
V
V
All dimensions in inches (mm).
TOP
.248{6.30)
.268{6.80)
.085{2.15)
.096{2.45)
1.203{5.15)J
1·215{5.45)
.016{O.40)
.024{O.60)
(
f
.145{3.69)
MINiMUM
~
.033{O.85)
.061{1.55~lJ
T
VIEW
I
I
I
I
I
I
L
4
_________
1
.030{O.75)1
.O49{1.25)
.053{1.35)
.065(1.65)
f
2
_1
t~
t
I
I
I
I
I
I
...l
j
3
.085(2.15)
.112 (2.85)
I~
I
.030(0.75)
.016{O.40)
.024{O.60)
.037{O.95)
.030{O.75)
.061 ( 1 .55 )
.091f2.31
.091f2.31
esc
esc
MAXIMUM
1
LEAD CODE:
1)
2)
3)
4)
ANODE
CATHODE
ANODE
CATHODE
PIN 2 IS COMMON TO THE TAB (4).
249
r
.211 ( 5 . 35)
.222(5.65)
MAXIMUM
#
Central™
Semiconductor Corll.
CSHD6-40C
SCHOTTKY RECTIFIER
DUAL,COMMON CATHODE
6.0 AMPS, 40 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CSHD6-40C, Silicon Schottky Rectifier is a
high quality, well constructed, highly reliable
. component designed for use in all types of
commercial, industrial, entertainment,
computer and automative applications.
DPAKCASE
MAXIMUM RATINGS: (TC=25 0 C unless otherwise noted)
SYMBOL
Peak Working Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC=125o C) Per Diode
Average Rectified Forward Current (TC=125o C) Per Device
Peak Repetitive Forward Current (TC=125 oC)
Peak Forward Surge Current
Peak Repetitive Reverse Surge Current (tp=2 ~s)
Operating and Storage
Junction Temperature
Thermal Resistance, Per Diode
VRWM
VR
10
10
"1'
40
40
3.0
"1t,".0
,,;,,:;;cJ>.O
IFRM
IF~~~
;~
'~R~,
~tg
8JC
;.,
UNITS
V
V
A
A
A
A
A
1.0
DC
-65 to +150
6.0
°C/W
'liIIt!IJ"!IJ!IJf','J" '~
%l~,\
~'t &.
-\')".>.;0-
ELECTRICAL CHARACTERISTIC'~iER DJiD§.i~C=250C unless otherwise noted)
,v
SYMBOL
.,'
,,:!tiit~.
,,(I'r:(icftCONI?,I~S
-,
MIN
~=4ey0,"
0
"';.'VR:'~V'
~,
,'1.
, TC=125 C
..
~~=3.0A
IF=3.0A, TC=125 0 C
IF=6.0A
IF=6.0A, TC=125 0 C
250
MAX
100
15
0.60
0.45
0.70
0.625
UNITS
~A
mA
V
V
V
V
All dimensions in inches (mm).
TOP
VIEW
.248(6.30)
.268(6.80)
.085(2.15)
.096(2.45)
I
.016(0.40)
.024(0.60)
r
1( '
t
.145(3.69)
I
+-+_~.~0~5~3~(
~1~.3~5_)
+ .065(1.65)
.203(5.15)
215
5 . 45)
4(
:I
:I
~,-M~U~M_-+-l _________ J
.21 1 ( 5 . 35)
.222(5.65)
_M_IN--,'
.033(0.85)
.061(1. 55
l
~~1~~2~~3~ ____j~_
=
030(0.75)
.016(0.J
.024(0.60)
.030(0.75)
.061 ( 1 .55 )
r
I
l
:r _.LW -.J
l
-
.049(1.25)
085(2.15)
F=
.112(2.85)
+
'--
I . . 030(0.75)
MAXIMUM
.037(095)
MAXIMUM
. 09 1 ( 2 . 3 )
.091 ( 2 .3)
Bse
Bse
LEAD CODE:
1)
2)
3)
4)
ANODE #1
CATHODE
ANODE #2
CATHODE
PIN 2 IS COMMON TO THE TAB (4).
251
Cantral™
CU03-02
Samlconductor Corp.
ULTRA FAST RECOVERY RECTIFIER
SINGLE, 3.0 AMPS, 200 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CUD3-02,
Silicon Ultra Fast Recovery Rectifier is a high
quality, well constructed, highly reliable
component designed for use in all types of
commercial, industrial, entertainment, computer
and automative applications.
DPAKCASE
MAXIMUM RATINGS: (TC=25 0 C unless otherwise noted)
SYMBOL
Peak Working Reverse Voltage
UNITS
200
V
DC Blocking Voltage
V
Average Rectified Forward Current (TC=1250 C)
Peak Repetitive Forward Current (TC= 125°C)
A
A
A
Peak Forward Surge Current (tp=2 /-ls)
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTIO$:
~",
.;~
SYMBOL
MIN
",C";125 0 C
,jfF=3"
~)f=3.0A, TC=125 0 C
MAX
/-lA
500
0.95
/-lA
V
0.75
V
ns
35
VR=30V, IF=1.0A, di/dt=50Al/-ls
252
UNIT
5.0
All dimensions in inches (mm).
TOP
.085(2.15)
.096(2.45)
.016(0.40)
.024(0.60)
r
.248(6.30)
.268(6.80)
I.. 203(5.15)j
__M
__
1J
__
.016(0.40)
.024(0.60)
.215(5.45)
(
4
I
+~__L-._0_5_3~(_1_.3_5~)
, .065(1.65)
'1
:
f
I
_________ j
--.l.. 1
.033(0.85)
T
I
f
:
IN~.~~.M_U_M ~l
.145(3.69)
.061(1. 55
VIEW
2
.030(0.~:
.049(1.25)
3
j
c
.085(2.15)
. 1 12 ( 2 . 85 )
l:
---r--c-LJ
--II_
.037(0.95)
+
.030(0.75)
MAXIMUM
MAXIMUM
.030(0.75)
. 061 ( 1 . 55)
. 091 ( 2 . 3 )
.091(2.3)
sse
sse
3
1
LEAD CODE:
1)
2)
3)
4)
ANODE
CATHODE
ANODE
CATHODE
PIN 2 IS COMMON TO THE TAB (4).
253
r
. 21 1 ( 5 . 35 )
.222(5.65)
.,
Central™
CUD6-02C
Semlcanduclar Carp.
ULTRA FAST RECOVERY RECTIFIER
DUAL, COMMON CATHODE
6.0 AMPS, 200 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CUD6-02C, Silicon Ultra Fast Recovery
Rectifier is a high quality, well constructed,
highly reliable component designed for use in
all types of commercial, industrial,
entertainment, computer, and automative
applications.
DPAK CASE
MAXIMUM RATINGS: (TC=25 0 C unless otherwise noted)
SYMBOL
VRRM
VR
Peak Working Reverse Voltage
DC Blocking Voltage
(T C=125 0 C)
Average Rectified Forward Current
Per Diode 10
Average Rectified Forward Current (TC=125 0 C) Per Device 10
UNITS
200
200
V
,"3.0
A
\!,,!'!6.&~
Peak Repetitive Forward Current (TC=125 0 C)
IFRrVf~'!,. ~>
Peak Forward Surge Current (tp=2 IlS)'fiPs~ . ~. ~5
Operating and Storage
~.. ~~. '$'
Junction Temperature
V
A
A
A
-65 to +150
Thermal Resistance
6.0
ELECTRICAL CHARACTEB$IOls, PER DIODE: (TC=250 C unless otherwise noted)
,'\."'~
SYMBOL
IR
IR
VF
VF
';"1\
T~N!,TC!gNDlTI0N6
MIN
!!!pw"V ~::;:~pOV
MAX
5.0
'VR~200V, TC=125 0 C
500
1.0
!!i!i,,,I F=3.0A
IF=3.0A, TC=125 0 C
0.95
VF
VF
IF=6.0A
IF=6.0A, TC=125 0 C
1.2
1.1
trr
VR=30V, IF=1.0A, di/dt=50A/IlS
35
254
UNIT
IlA
IlA
V
V
V
V
ns
All dimensions in inches (mm).
TOP
VIEW
.248(6.30)
.268(6.80)
.085(2.15)
.096(2.45)
r
.016(0.40)
.024(0.60)
1.203(5:15)
1
(
f
.145(3.69)
.
2 15 ( 5 . 45 )
1-+-.1..-.'
_0_53---,--(1_._3_5...:...)
, .065(1.65)
4
:I
:I
_M_IN~j~M_U_M_-rl _________ j
.033(0.85)
.061(1.55
l
T
.016(0.40)
.024(0.60)
.21 1 (5.35)
. 65 j
-:222 ( 5
~~1~~2~~3~ ___~j~_
:r
l
.030(0.75)
l
_.LJ
F=
~
.049(1.25)
.085(2.15)
F=
.112(2.85)
t
,..,..
--11-
.037(0.95)
.030(0.75)
MAXIMUM
MAXIMUM
.030(0.75)
.061 ( 1 .55)
.091 ( 2 .31
. 091 ( 2 . 3 I
BSC
BSC
LEAD CODE:
1)
2)
3)
4)
ANODE 1
CATHODE
ANODE 2
CATHODE
PIN 2 IS COMMON TO THE TAB (4).
255
Central™
Semlcanductor Carp.
CXSH-4
SCHOTTKY BARRIER RECTIFIER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXSH-4
type is a schottky barrier rectifier mounted in
an epoxy molded case using a metal to silicon
junction to yield low forward voltage drop. This
device utilizes a single chip with anode
connections made to PIN 1 and PIN 3.
SOT-89 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
Peak Forward Surge Current(8.3ms, Non-Rep.)
Operating and Storage
Junction Temperature
UNITS
V
V
V
40
40
28
1.0
10
VRRM
VR
VR(RMS)
10
IFSM
A
A
-65 to +150
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
MIN
TEST CONDITIONS
VR=40V
VR=40V, T A=100 o C
IF=1.0A
256
MAX
UNITS
1.0
10
0.55
mA
mA
V
All dimemsions in inches (mm).
BonOMVIEW
.173(4.39)
. 181 ( 4 . 60)
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
f
.092(2.34)
.100(2.54)
. 154 (3.91 )
.165(4.19)
1
6 .---------
.015(0.38)
.016 ( 0 .41 )
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 1 18 ( 3.00 )
3
2
1
LEAD CODE:
1) ANODE
2) CATHODE
3) ANODE
PIN 2 IS COMMON TO THE TAB.
R1
257
Central™
CXT2222A
Semiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CXT2222A type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose and
switching applications.
SOT-89 CASE
UNITS
V
V
V
mA
W
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
75
40
6.0
600
1.2
VCBO
VCEO
VEBO
IC
PD
-65 to + 150
104
°c
°C/W
ELECTRICAL CHARACTERISTICS (T A=25 0 C unless otherwise noted)
SYMBOL
ICBO
ICBO
lEBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCB=60V
VCB=60V, TA=125 0 C
VEB=3.0V
VCE=60V, VEB=3.0V
IC=10IlA
IC=10mA
IE=1OIlA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VCE=10V,IC=0.1mA
VCE=10V,IC=1.0mA
VCE=10V,IC=10mA
MIN
MAX
10
10
10
10
75
40
6.0
0.6
35
50
75
258
0.3
1.0
1.2
2.0
UNITS
nA
IlA
nA
nA
V
V
V
V
V
V
V
SYMBOL
TEST CONDITIONS
MIN
100
VCE=10V,IC=150mA
50
VCE=1.0V,IC=150mA
40
VCE=10V,IC=500mA
300
VCE=20V, IC=20mA, f=1 OOMHz
VCB=10V, IE=O, f=1.0MHz
VEB=0.5V, IC=O, f=1.0MHz
2.0
VCE=10V, IC=1.0mA, f=1.0kHz
0.25
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
50
VCE=10V, IC=1.0mA, f=1.0kHz
75
VCE=10V, IC=10mA, f=1.0kHz
5.0
VCE=10V, IC=1.0mA, f=1.0kHz
25
VCE=10V, IC=10mA, f=1.0kHz
VCB=10V, IE=20mA, f=31.8MHz
VCE=10V, IC=100JlA, RS=1.0kQ, f=1.0kHz
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
hFE
hFE
hFE
fT
Cob
Cib
hie
hie
hre
h re
hfe
hfe
hoe
hoe
rb'C c
NF
td
tr
ts
tf
MAX
300
8.0
25
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
10
25
225
60
UNITS
MHz
pF
pF
kQ
kQ
x10- 4
x10- 4
Jlmhos
Jlmhos
ps
dB
ns
ns
ns
ns
All dimensions in inches (mm).
BOTTOM VIEW
.173(4.39)
. 181 (4.60)
1
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
6 .-----------
.015(0.38)
.016(0.41)
r
LEAD CODE:
1
1) EMITTER
2) COLLECTOR
3) BASE
.092(2.34)
.100(2.54)
. 154 ( 3 .91 )
. 165 ( 4 . 19)
I
I
.059(1.50)
.013(0.33)
.019(0.48)
. 1 18 ( 3 . 00)
R1
259
Cantral™
Semlconducto. CO.".
CXT2907A
,
PNP SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CXT2907 A type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose and
switching applications.
SOT·89 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
mA
W
60
60
5.0
600
1.2
VCBO
VCEO
VEBO
IC
PD
-65 to +150
104
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
ICBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCB=50V
VCB=50V,TA=1250C
VCE=30V, VBE=0.5V
IC=10/!A
IC=10mA
IE=10/!A
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA,IB=50mA
VCE=10V,IC=0.1mA
VCE=10V,IC=1.0mA
VCE=10V,IC=10mA
MIN
MAX
10
10
50
60
60
5.0
0.4
1.6
1.3
2.6
75
100
100
260
UNITS
nA
/!A
nA
V
V
V
V
V
V
V
SYMBOL
TEST CONDITIONS
VCE=10V,IC=150mA
VCE=10V,IC=500mA
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=O, f=1.0MHz
VBE=2.0V, IC=O, f=1.0MHz
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
hFE
hFE
fT
Cob
Cib
ton
td
tr
toff
ts
tf
MIN
100
50
200
MAX
300
8.0
30
45
10
40
100
80
30
UNITS
MHz
pF
pF
ns
ns
ns
ns
ns
ns
All dimensions in inches (mm).
BOTTOM VIEW
.173(4.39)
. 181 ( 4.60 )
.055(1.40)
.063(1.60)
.063(1.60)
.071(1.80)
r
.092(2.34)
.100(2.54)
. 154 ( 3 . 91 )
. 165 (4. 19)
6
1
0
--------
.015(0.38)
.016 ( 0 . 41)
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 118 ( 3.00 )
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
R1
261
Central™
CXT3019
Samiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CXT3019 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current general purpose
amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS (T A=25 0 C)
UNITS
V
V
V
A
A
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
140
80
7.0
1.0
1.5
1.2
VCBO
VCEO
VEBO
IC
ICM
PD
W
-65 to +150
104
°c
°C/W
ELECTRICAL CHARACTERISTICS (T A=250C unless otherwise noted)
SYMBOL
ICBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
MIN
TEST CONDITIONS
VCB=90V
VEB=5.0V
IC=1001lA
IC=30mA
IE= 1OOIlA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
IC=150mA, IB=15mA
VCE=10V,IC=0.1mA
VCE=10V,IC=10mA
VCE=10V,IC=150mA
VCE=10V,IC=500mA
VCE=10V,IC=1.0A
MAX
10
10
140
80
7.0
0.2
0.5
1.1
50
90
100
50
15
262
300
UNITS
nA
nA
V
V
V
V
V
V
SYMBOL
fT
Cob
Cib
NF
TEST CONDITIONS
VCE=10V, IC=50mA, f=1.0MHz
VCB=10V, IE=O, f=1.0MHz
VEB=0.5V, IC=O, f=1.0MHz
VCE=1 OV, IC=100IlA, RS=1 kn, f=1.0kHz
All dimensions in inches (mm).
MIN
100
MAX
12
60
4.0
UNITS
MHz
pF
pF
dB
BOTTOM VIEW
.173(4.39)
. 181 ( 4.60 )
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
r
.092(2.34)
.100(2.54)
. 154 ( 3 . 91 )
. 165 (4. 19)
6'----------.
.015(0.38)
.016 ( 0 . 41 )
1
~
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 1 18 ( 3 . 00)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
R1
263
Central™
Semlconducto. Co....
CXT3904 NPN
CXT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CXT3904, CXT3906 types are complementary
silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for small
signal general purpose and switching
applications.
SOT-89 CASE
MAXIMUM RATINGS (TA=25 0 C)
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
CXT3904
60
40
6.0
VCSO
VCEO
VESO
IC
PD
CXT3906
40
40
5.0
UNITS
V
V
V
200
1.2
-65 to +150
104
mA
W
°c
°CIW
ELECTRICAL CHARACTERISTICS (T A=25 0 C unless otherwise noted)
SYMBOL
ICEV
SVCSO
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=30V, VES=3.0V
IC=10mA
IC=1.0mA
IE=10~A
IC=10mA, IS=1.0mA
IC=50mA,IS=5.0mA
IC=10mA,IS=1.0mA
IC=50mA, IS=5.0mA
VCE=1.0V,IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V,IC=10mA
VCE=1.0V, IC=50mA
CXT3904
MIN MAX
50
60
40
6.0
0.20
0.30
0.65 0.85
0.95
40
70
100
300
60
264
CXT3906
MIN MAX
50
40
40
5.0
0.25
0.40
0.65
0.85
0.95
60
80
100
60
UNITS
nA
V
V
V
V
V
V
V
300
SYMBOL
hFE
fT
Cob
Cib
hie
hre
hfe
hoe
NF
td
tr
ts
tf
CXT390§
MIN MAX
30
250
4.5
10
2.0
12
0.1
10
100 400
3.0
60
CXT3904
TEST CONDITIONS
MIN MAX
30
VCE=1.0V,IC=100mA
300
VCE=20V, IC=10mA, f=100MHz
4.0
VCS=5.0V, IE=O, f=1.0MHz
8.0
VSE=0.5V, IC=O, f=1.0MHz
1.0
10
VCE=10V, IC=1.0mA, f=1.0kHz
0.5
8.0
VCE=10V, IC=1.0mA, f=1.0kHz
400
100
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
40
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100IlA, RS=1.0kQ
f=10Hz to 15.7kHz
5.0
35
VCC=3.0V, VSE=0.5, IC=10mA, IS1 =1.0mA
35
VCC=3.0V, VSE=0.5, IC=10mA, IS1=1.0mA
200
VCC=3.0V, IC=10mA, IS1=IS2=1.0mA
50
VCC=3.0V, IC=10mA, IS1=IS2=1.0mA
4.0
35
35
225
75
UNITS
MHz
pF
pF
kQ
x10- 4
mmhos
dS
ns
ns
ns
ns
All dimensions in inches (mm).
BonOMVIEW
.173(4.39)
.181(4.60)
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
r
.092(2.34)
.100(2.54)
. 154 ( 3 . 91 )
. 165 ( 4 . 19)
6'------.015(0.38)
.016 ( 0 .41 )
1
~
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 118 ( 3.00 )
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) SASE
R1
265
Central™
Semiconductor Carll.
\ CXT4033
PNP SILICON TRANSISTOR
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CXT4033 type is an PNP silicon transistor
manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
V
A
A
W
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
80
80
5.0
1.0
1.5
1.2
VCBO
VCEO
VEBO
IC
ICM
Po
-65 to +150
104
°C
°CIW
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=60V
VEB=5.0V
IC=1O/-lA
IC=10mA
IE=10/-lA
IC=150mA,IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA,IB=50mA
VCE=5.0V,IC=0.1mA
VCE=5.0V, IC=100mA
VCE=5.0V,IC=500mA
VCE=5.0V, IC=1.0A
MIN
UNITS
nA
nA
V
V
V
V
V
V
V
MAX
50
10
80
80
5.0
0.15
0.50
0.90
1.10
75
100
70
25
300
266
---
--
-
SYMBOL
TEST CONDITIONS
V CE=1 OV, IC=50mA, f=1.0MHz
VCB=10V, IE=O, f=1.0MHz
VEB=O.5V, IC=O, f=1.0MHz
fT
Cob
Cib
All dimensions in inches (mm).
MIN
100
MAX
20
110
UNITS
MHz
pF
pF
BOTTOM VIEW
.173(4.39)
. 181 ( 4 . 60)
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
r
.092(2.34)
.100(2.54)
. 154 ( 3.91 )
. 165 ( 4. 19)
6 ,---------
.015(0.38)
.016 ( 0 . 41 )
1
~
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 118 ( 3.00 )
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
R1
267
Cantral™
Semlconducta. Ca....
CXT5401
DESCRIPTION:
PNP SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR CXT5401
type is an PNP silicon transistor manufactured
bythe epitaxial planar process, epoxy molded
in a surface mount package, designed for
high voltage amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS (TA=25 0 C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
160
150
5.0
500
1.2
VCBO
VCEO
VEBO
IC
Po
V
mA
W
°c
-65 to +150
104
T J,Tstg
8JA
°CIW
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
TEST CONDITIONS
VCB=120V
VCB=120V, TA=100 oC
IC=100jlA
IC=1.0mA
IE=10jlA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V,IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
268
MIN
MAX
50
50
160
150
5.0
V
V
0.2
0.5
1.0
1.0
50
60
50
100
UNITS
nA
jlA
V
V
V
V
V
240
300
MHz
SYMBOL
Cob
hfe
NF
TEST CONDITIONS
VCB=10V, 'E=O, f=1.0MHz
VCE=10V, 'C=1.0mA, f=1.0kHz
VCE=5.0V, IC=200~A, Rs=10n
f=10Hz to 15.7kHz
MIN
40
MAX
6.0
200
UNITS
pF
8.0
dB
All dimensions in inches (mm).
BOTTOM VIEW
.173(4.39)
. 181 ( 4 . 60)
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
i
,092(2.34)
.100(2.54)
. 154 ( 3.91 )
. 165 ( 4. 19)
6 .----------.
.015(0.38)
.016 ( 0 .41 )
1
~
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 118 ( 3.00 )
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
R1
269
Cantral™
Semiconductor carll.
CXT5551
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5551
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for
high voltage amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
180
160
VCSO
VCEO
VESO
IC
PD
6.0
600
1.2
V
mA
W
-65 to +150
104
°C
°CIW
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICSO
ICSO
SVCSO
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
hFE
tr
TEST CONDITIONS
VCS=120V
VCS=120V,TA=100oC
IC=100mA
IC=1.0mA
IE=10mA
IC=10mA, IS=1.0mA
IC=50mA, IS=5.0mA
IC=10mA,IS=1.0mA
IC=50mA,IS=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V,IC=10mA
VCE=5.0V,IC=50mA
VCE=10V, IC=10mA, f=100MHz
270
MIN
MAX
50
50
~
V
V
V
180
160
6.0
0.15
0.20
1.00
1.00
80
80
30
100
UNITS
nA
V
V
V
V
250
300
MHz
TEST CONDITIONS
VCB=10V, IE=O, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200mA, RS=10W
f=10Hz to 15.7kHz
SYMBOL
Cob
hfe
NF
All dimensions in inches (mm).
MIN
MAX
50
6.0
200
8.0
UNITS
pF
dB
BOTTOM VIEW
.173(4.39)
. 181 ( 4 . 60)
.055(1.40)
.063(1.60)
.063(1.60)
. 071 ( 1 .80 )
r
6~
.015(0.38)
.016 ( 0 . 41 )
.092(2.34)
.100(2.54)
. 154 ( 3.91 )
. 165 ( 4 . 19)
1
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 1 18 ( 3 . 0 0)
LEAD CODE:
1) EMITTER
2) BASE
3) COLLECTOR
R1
271
Central™
CXTA14 NPN
CXTA64 PNP
Semiconductor Corp.
SILICON COMPLEMENTARY
DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXTA 14,
CXTA64 types are complementary silicon
Darlington transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for
applications requiring extremely high gain.
SOT-89 CASE
MAXIMUM RATINGS (T A=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
mA
W
30
30
10
500
1.2
VCBO
VCEO
VEBO
IC
PD
-65 to +150
104
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
ICEO
BVCES
VCE(SAT)
VBE(ON)
hFE
hFE
tr
TEST CONDITIONS
VCB=30V
VCE=10V
IC=1001lA
IC=100mA,IB=0.1mA
VCE=5.0V,IC=100mA
VCE=5.0V,IC=10mA
VCE=5.0V,IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
MIN
MAX
100
100
30
1.5
2.0
10,000
20,000
125
272
UNITS
nA
nA
V
V
V
MHz
All dimensions in inches (mm).
BonOMVIEW
.173(4.39)
. 181 ( 4 . 60)
.055(1.40)
.063(1.60)
.063(1.60)
.071(1.80)
r
.092(2.34)
.100(2.54)
. 154 ( 3 . 91 )
. 165 ( 4 . 19)
1
~
.015(0.38)
.016(0.41)
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 118 ( 3 . 00)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
R1
273
Central™
CXTA42 NPN
CXTA92 PNP
Semiconductor Corp.
SILICON COMPLIMENTARY
HIGH VOLTAGE TRANSISTOR
DESCRIPTION:
The CENTRALSEMICONDUCTOR CXTA42 ,
CXTA92 types are complementary surface
mount epoxy molded silicon planar epitaxial
transistors designed for high voltage
applications.
SOT-a9 CASE
MAXIMUM RATINGS (TA=25 0 C)
SYMBOL
Collector-Base Voltage
Collector-Emitte.r Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
CXTA42
300
300
6.0
CXTA92
300
300
5.0
UNITS
V
V
V
mA
W
-65 to +150
°c
°C/W
500
1.2
TJ,Tstg
8JA
104
ELECTRICAL CHARACTERISTICS (T A=25 0 C unless otherwise noted)
SYMBOL
ICBO
lEBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fr
Cob
TEST CONDITIONS
VCB=200V
VBE=6.0V
VBE=3.0V
IC=10011A
IC=1.0mA
IE=1OO11A
IC=20mA, IB=2.0mA
IC=20mA, IB=2.0mA
VCE=10V,IC=1.0mA
VCE=10V,IC=10mA
VCE=10V,IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=O, f=1.0MHz
274
CXTA42
MIN MAX
100
100
CXTA92
MIN MAX
250
300
300
6.0
300
300
5.0
100
0.5
0.9
25
40
40
50
0.5
0.9
25
40
25
50
3.0
UNITS
nA
nA
nA
V
V
V
V
V
MHz
6.0
pF
All dimensions in inches (mm).
BOTTOM VIEW
.173(4.39)
. 181 ( 4.60 )
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
i
6°~
.015(0.38)
.016 ( 0 .41 )
.092(2.34)
.100(2.54)
. 154 ( 3 . 91 )
. 165 ( 4 . 19)
1
~
.015(0.38)
.021(0.53)
.031(0.80)
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
. 1 18 ( 3 . 00)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
R1
275
Central™
Semlconducto. Co,,,.
CZS5064
SILICON CONTROLLED RECTIFIER
DESCRIPTION
The CENTRALSEMICONOUCTOR CZS5064
type is an epoxy molded PNPN Silicon
Controlled Rectifier manufactured in an epoxy
molded surface mount package, designed for
control systems and sensing circuit
applications.
SOT-223 CASE
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
Peak Repetitive Reverse Voltage
RMS On-State Current
Average On-State Current (TC=67°C)
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
VORM
VRRM
IT(RMS)
IT(AV)
TJ
Tstg
8JA
8JC
400
400
0.8
0.51'
-40 to +125
-40 to +150
150
25
UNITS
V
V
A
A
°C
°C
°CIW
°CIW
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
IORM
IRRM
VT
IGT
VGT
VGO
IH
tON
TEST CONDITIONS
MAX
50
50
1.7
200
0.8
MIN
T C=125 OC
VO=400V, RGK=1 Kn,
VO=400V, RGK=1Kn, TC=125 OC
IT=1.2A
VO=7.0V, RL=100n, RGK=1Kn
VO=7.0V, RL=1 oon, RGK=1 Kn
VO=400V, RL=100n, TC=125 OC
VO=7.0, RGK=1 Kn
VO=400V, IGT=1.0mA, IF=1.0A,
RGK=1.0n, di/dt=6.0AlJ.!s
276
0.1
5.0
2.8 TYP
UNITS
J.!A
J.!A
V
J.,tA
V
V
mA
J.!s
All dimensions in inches (mm).
TOP VIEW
.248(8.30)
.264(6.71)
0', 7'
.083(1.60)
.067(1.70)
4
r
.130(3.30)
. 146 ( 3 . 71)
~
1
2
.033(0.84
.041(1.04)
3
.091 (2.31 )
.024(0.61)
.031(0.79)
. 181 (4.60 )
LEAD CODE:
1) CATHODE
2) ANODE
3) GATE
4) ANODE
277
.264(8.71)
.287(7.29)
j
Central™
CZSH-4
Semiconductor Corp.
SCHOTTKY BARRIER RECTIFIER
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZSH-4
type is a schottky barrier rectifier mounted in
an epoxy molded case using a metal to silicon
junction to yield low forward voltage drop.
This device utilizes a single chip with anode
connections made to PIN 1 and PIN 3.
SOT-223 CASE
MAXIMUM RATINGS (T A=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
Peak Forward Surge Current (8.3ms, Non-Rep.)
Operating and Storage
Junction Temperature
UNITS
V
V
V
40
40
28
2.0
10
VRRM
VR
VR(RMS)
10
IFSM
A
A
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (T A=250C unless otherwise noted)
SYMBOL
IR
IR
VF
VF
TEST CONDITIONS
VR=40V
VR=40V, TA=100oC
IF=1.0A
IF=2.0A
MIN
278
MAX
1.0
10
0.50
0.60
UNITS
mA
mA
V
V
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
.063(1.60)
.067(1.70)
4
i
.130(3.30)
. 146 (3 . 71 )
.009(0.23)
.013(0.33)
1
3
2
'if.--.
.264(6.71)
.287(7.29)
j
.091 ( 2.31 )
.024(0.81)
.031(0.79)
. 181 ( 4 . 60)
4
1
2
3
LEAD CODE:
1)
2)
3)
4)
ANODE
CATHODE
ANODE
CATHODE
R1
279
Central™
Semlconducto.
CZT31C NPN
CZT32C PNP
CO,,,.
2.0W COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT31 C
and CZT32C types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 3.0 amps.
~TM
Wj
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
100
100
5.0
3.0
6.0
1.0
2.0
VCBO
VCEO
VEBO
IC
ICM
IB
PD
T J,Tstg
8JA
-65 to +150
62.5
UNITS
V
V
V
A
A
A
W
°c
°CIW
ELECTRICAL CHARACTERISTICS: (T A=250C unless otherwise noted)
SYMBOL
TEST CONDITIONS
ICES
ICEO
lEBO
BVCEO
* VCE(SAT)
* VBE(ON)
* hFE
* hFE
fT
VCE=100V
VCE=60V
VEB=5.0V
IC=30mA
IC=3.0A, IB=375mA
VCE=4.0V,IC=3.0A
VCE=4.0V,IC=1.0A
VCE=4.0V,IC=3.0A
VCE=10V, IC=500mA, f=1.0MHz
MIN
* Pulsed, 2%D.C.
280
MAX
200
300
1.0
100
1.2
1.8
25
10
3.0
UNITS
I1A
JlA
mA
V
V
V
100
MHz
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
0°.7°
.063(1.60)
.067(1.70)
4
r
.13013.30)
.146(3.71)
~
1
2
.033(0.84
.041(1.04)
3
.091 ( 2 . 31)
.024(0.61)
.031(0.79)
. 181 (4.60 )
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
281
.264(6.71)
.287(7.29)
j
#-
Central™
CZT122 NPN
CZT127 PNP
Semiconductor Corp.
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT122,
CZT127 types are Complementary Silicon
Power Darlington Transistors manufactured
in a surface mount package designed for low
speed switching and amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS: (T A=25°C)
Collector-Base Voltage
VCBO
100
UNITS
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
IC
5.0
V
5.0
A
ICM
IB
PD
8.0
A
120
2.0
mA
W
SYMBOL
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
ICEO
-65 to +150
62.5
°c
°C/W
(TA=25°C)
MIN
UNITS
VCE=50V
MAX
500
ICBO
VCB=100V
200
lEBO
VEB=5.0V
2.0
f..lA
mA
BVCEO
IC=30mA
VCE(SAT)
IC=3.0A, IB=12mA
2.0
V
VCE(SAT)
IC=5.0A, IB=20mA
4.0
V
VBE(ON)
hFE
VCE=3.0V,IC=3.0A
2.5
V
VCE=3.0V,IC=500mA
1000
hFE
fT
VCE=3.0V,IC=3.0A
1000
Cob
VCB=10V, IE=O, f=1.0MHz (CZT122)
200
pF
Cob
VCB=10V, IE=O, f=1.0MHz (CZT127)
300
pF
100
V
4.0
VCE=4.0V, IC=3.0A, f=1.0MHz
282
f..lA
MHz
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
0' - 7'
.063(1.80)
.067(1.70)
4
i
.130(3.30)
. 146 ( 3 .71 )
1
2
.009(0.23)
.013(0.33) ~~
3
.091 ( 2 . 31 )
.024(0.61)
.031(0.79)
. 181 ( 4 . 60)
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
283
.264(6.71)
.287(7.29)
j
Central™
CZT2000
Semlconducto, CO'II.
NPN SILICON
EXTREMELY HIGH VOLTAGE
DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRALSEMICONDUCTOR CZT2000
type is an NPN Epitaxial Planar Silicon
Darlington Transistor manufactured in an
epoxy molded surface mount package,
designed for applications requiring extremely
high voltages and high gain capability.
SOT-223 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
200
200
10
600
2.0
VCBO
VCES
VEBO
IC
PD
V
V
mA
W
-65 to +150
62.5
°C
°CIW
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
lEBO
BVCES
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
TEST CONDITIONS
VCB=180V
VBE=10V
IC=1.0mA
IC=20mA, IB=25IlA
IC=80mA, IB=4OIlA
IC=160mA,IB=1OOIlA
VCE=5.0V,IC=160mA
VCE=5.0V,IC=1OOIlA
VCE=5.0V,IC=10mA
VCE=5.0V,IC=160mA
MIN
MAX
500
100
200
0.9
1.1
1.2
2.0
3,000
3,000
3,000
284
UNITS
nA
nA
V
V
V
V
V
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
0', 7'
.063(1.60)
.067(1.70)
L·114(2.90)J
. 122 ( 3 . 10)
4
------;;
~
r
.130(3.30)
. 146 ( 3 . 71 )
IL .009(0.23)
.013(0.33)
f--- r-
1
'if.--,
.033 0.84)
.041(1.04)
.024(0.61)
.031(0.79)
I
r----- r - ~
2
~ ~
~
3
.264(6.71)
.287(7.29)
j
.091 ( 2 . 3 1 )
.. ... ,
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
R1
285
Central™
CZT2222A
Semiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION
The
CENTRAL
SEMICONDUCTOR
CZT2222A type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for general purpose amplifier and
switching applications.
SOT-223 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
V
mA
W
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
75
40
6.0
600
2.0
VCBO
VCEO
VEBO
IC
Po
-65 to +150
62.5
TJ,Tstg
8JA
°C
0("'1\11/
'VI Y W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
ICBO
lEBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
MIN
TEST CONDITIONS
VCB=60V
VCB=60V,TA=1250C
VEB=3.0V
VCE=60V, VEB=3.0V
IC=10~A
MAX
10
10
10
10
75
40
6.0
IC=10mA
IE=10~A
IC=150mA, IB=15mA
IC=500mA,IB=50mA
IC=150mA,IB=15mA
IC=500mA, IB=50mA
VCE=10V,IC=O.1mA
VCE=10V,IC=1.0mA
VCE=10V,IC=10mA
0.6
35
50
75
286
0.3
1.0
1.2
2.0
UNITS
nA
~A
nA
nA
V
V
V
V
V
V
V
SYMBOL
TEST CONDITIONS
MIN
100
VCE=10V,IC=150mA
50
VCE=1.0V, IC=150mA
40
VCE=10V,IC=500mA
300
VCE=20V, IC=20mA, f=100MHz
VCS=10V, IE=O, f=1.0MHz
VES=0.5V, IC=O, f=1.0MHz
2.0
VCE=1 OV, IC=1.0mA, f=1.0kHz
0.25
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
50
VCE=1 OV, IC=1.0mA, f=1.0kHz
75
VCE=10V, IC=10mA, f=1.0kHz
5.0
VCE=1 OV, IC=1.0mA, f=1.0kHz
25
VCE=10V, IC=10mA, f=1.0kHz
VCS=10V, IE=20mA, f=31.8MHz
VCE=1 OV, IC=100IlA, RS=1.0kQ, f=1.0kHz
VCC=30V, VSE=0.5, IC=150mA, IS1=15mA
VCC=30V, VSE=0.5, IC=150mA, IS1=15mA
VCC=30V, IC=150mA, IS1=IS2=15mA
VCC=30V, IC=150mA, IS1=IS2=15mA
hFE
hFE
hFE
fT
Cob
Cib
hie
hie
h re
h re
hfe
hfe
hoe
hoe
rb'C c
NF
td
tr
ts
tf
MAX
300
8.0
25
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
10
25
225
60
UNITS
MHz
pF
pF
kQ
kQ
x10- 4
x10- 4
Ilmhos
Ilmhos
ps
dS
ns
ns
ns
ns
All dimensions in inches (mm).
TOP VIEW
.248(8.30)
.264(6.71)
0"· 7"
.063(1.60)
.067(1.70)
i
.130(3.30)
. 146 ( 3.71 )
.009(0.23)
.013(0.33)
.264(6.71)
.287(7.29)
j
'if..-.
LEAD CODE:
1)
2)
3)
4)
SASE
COLLECTOR
EMITTER
COLLECTOR
R1
287
Central™
Samlconductor Corp.
CZT2907A
PNP SILICON TRANSISTOR
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CZT2907 A type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for general purpose amplifier and
switching applications.
SOT-223 CASE
MAXIMUM RATINGS (TA=25°C)
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
mA
W
60
60
5.0
600
2.0
VCSO
VCEO
VESO
IC
PD
-65 to +150
62.5
TJ,Tstg
0JA
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICSO
ICSO
ICEV
SVCSO
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
TEST CONDITIONS
VCS=50V
VCS=50V, TA=1250C
VCE=30V, VSE=0.5V
IC=10JlA
IC=10mA
IE=10JlA
IC=150mA, IS=15mA
IC=500mA,IS=50mA
IC=150mA,IS=15mA
IC=500mA,IS=50mA
VCE=10V,IC=0.1mA
VCE=10V,IC=1.0mA
MIN
MAX
10
10
50
60
60
5.0
0.4
1.6
1.3
2.6
75
100
288
UNITS
nA
JlA
nA
V
V
V
V
V
V
V
TEST CONDITIONS
VCE=10V,IC=10mA
VCE=10V,IC=150mA
VCE=10V,IC=500mA
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=O, f=1.0MHz
VBE=2.0V, IC=O, f=1.0MHz
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
VCC=6.0V, IC=150mA, IB1=IB2=15mA
SYMBOL
hFE
hFE
hFE
fT
Cob
Cib
ton
td
tr
toft
ts
tf
MIN
100
100
50
200
MAX
UNITS
300
MHz
8.0
30
45
10
40
100
80
30
pF
pF
ns
ns
ns
ns
ns
ns
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
0'·7'
.063(1.80)
.067(1.70)
4
i
.130(3.30)
. 146 (3.71 )
2
.009(0.23)
.013(0.33)
'if.--.
3
.264(6.71)
.287(7.29)
j
.091 ( 2 .31 )
. 181 ( 4 .60 )
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
R1
289
..JI&•
CZT2955
CZT3055
Central™
PNP
NPN
Semiconductor CO'II.
2.0W SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2955
and CZT3055 types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 6.0 amps.
~TM
WJ
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Junction Temperature
Thermal Resistance
SYMBOL
TEST CONDITIONS
ICEO
ICEV
VCE=30V
lEBO
BVCER
BVCEO
* VCE(SAT)
* VBE(ON)
* hFE
* hFE
fT
100
VCER
VCEO
70
60
7.0
VEBO
IC
IB
Po
Power Dissipation
Operating and Storage
ELECTRICAL CHARACTERISTICS:
VCBO
6.0
3.0
2.0
TJ,Tstg
8JA
-65 to +150
62.5
UNITS
V
V
V
V
A
A
W
°c
°CIW
(TA=25°C)
MIN
VCE=100V, VEB(off)=1.5V
VEB=7.0V
IC=30mA, RBE=100n
IC=30mA
MAX
700
1.0
5.0
UNITS
IlA
mA
mA
70
V
60
V
IC=4.0A, IB=400mA
1.1
V
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=6.0A
VCE=10V, IC=500mA, f=1.0MHz
1.5
V
* Pulsed, 2% D.C.
290
20
5.0
2.5
70
MHz
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
0° _ 7°
.063(1.60)
.067(1.70)
1 1 4 ( 2 . 90 )J
I.·. 122
( 3 . 10)
4
~
~
i
.130(3.30)
. 146 ( 3 . 71 )
IL r - f - - - r - f - - - - ~
1
.009(0.23)
.013(0.33)
'1~
.033 0.84)
.041 ( 1 .04 )
.024(0.61)
.031(0.79)
J
l . ~.,",
LEAD CODE:
1)
2)
3)
4)
2
BASE
COLLECTOR
EMITTER
COLLECTOR
291
~
3
.091 ( 2.31 )
.264(6.71)
.287(7.29)
j
Central™
semlconducto. Co.tI.
CZT3019
,.
NPN SILICON TRANSisTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT3019
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
current general purpose amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS (TA=25 oC)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
A
A
W
120
80
7.0
1.0
1.5
2.0
VCBO
VCEO
VEBO
IC
ICM
PD
°c
-65 to+150
62.5
TJ,Tstg
8JA
°C/W
ELECTRICAL CHARACTERISTICS (TA=250 C unless otherwise noted)
SYMBOL
ICBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=90V
VEB=5.0V
IC=100JlA
IC=30mA
IE=100JlA
IC:;:150mA, IB:;:15mA
IC=500mA, IB=50mA
IC=150mA,IB=15mA
VCE=10V,IC=0.1mA
VCE=10V,IC=10mA
VCE=10V,IC=150mA
VCE=10V,IC=500mA
VCE=10V,IC=1.0A
MIN
MAX
10
10
120
80
7.0
0.2
0.5
1.1
50
90
100
50
15
292
300
UNITS
nA
nA
V
V
V
V
V
V
SYMBOL
fT
Cob
Cib
NF
TEST CONDITIONS
MIN
100
VCE=10V, IC=50mA, f=1.0MHz
VCB=10V, IE=O, f=1.0MHz
VEB=0.5V, IC=O, f=1.0MHz
VCE=10V, IC=100IlA, RS=1 kil, f=1.0kHz
MAX
12
60
4.0
UNITS
MHz
pF
pF
dB
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
0'· 7'
.063(1.60)
.067(1.70)
4
r
.130(3.30)
. 146 ( 3 . 7 1 )
.009(0.23)
.013(0.33)
2
'if.--
3
.264(6.71)
.287(7.29)
j
.091 ( 2 . 31)
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
R1
293
Central™
CZT3904 NPN
CZT3906 PNP
Semiconductor Cor••
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CZT3904, CZT3906 types are complementary
silicon transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for small
signal general purpose and switching
applications.
SOT-223 CASE
MAXIMUM RATINGS (T A=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
CZT3904
60
40
6.0
CZT3906
40
40
5.0
200
2.0
-65 to +150
62.5
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10IlA
IC=1.0mA
IE=1OIlA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA,IB=5.0mA
VCE=1.0V,IC=0.1mA
VCE=1.0V,IC=1.0mA
VCE=1.0V,IC=10mA
VCE=1.0V, IC=50mA
VCE=1.0V,IC=100mA
CZT3904
MIN MAX
50
60
40
6.0
0.20
0.30
0.65
0.85
0.95
40
70
100
300
60
30
294
CZT3906
MIN MAX
50
40
40
5.0
0.25
0.40
0.65
0.85
0.95
60
80
100
300
60
30
UNITS
nA
V
V
V
V
V
V
V
SYMBOL
fT
Cob
Cib
hie
hre
hfe
hoe
NF
CZT3904
TEST CONDITIONS
MIN MAX
VCE=20V, IC=10mA, f=100MHz
300
VCS=5.0V, IE=O, f=1.0MHz
4.0
VSE=0.5V, IC=O, f=1.0MHz
B.O
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
10
VCE=10V, IC=1.0mA, f=1.0kHz
0.5
B.O
VCE=10V, IC=1.0mA, f=1.0kHz
100
400
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
40
VCE=5.0V, IC=100IlA, RS=1.0kQ
f=10Hz to 15.7kHz
5.0
VCC=3.0V, VSE=0.5, IC=10mA, IS1=1.0mA
35
VCC=3.0V, VSE=0.5, IC=10mA, IS1=1.0mA
35
VCC=3.0V, IC=10mA, IS1=IS2=1.0mA
200
VCC=3.0V, IC=10mA, IS1=IS2=1.0mA
50
CZT3906
MIN MAX
250
4.5
10
2.0
12
0.1
10
100 400
3.0
60
4.0
35
35
225
75
UNITS
MHz
pF
pF
kQ
x10- 4
Ilmhos
dS
ns
ns
ns
ns
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
0'·7'
.063(1.60)
.067(1.70)
4
r
.130(3.30)
. 146 ( 3 . 7 1 )
2
1
.009(0.23)
.013(0.33)
'if...-.
j
3
.091 (2
.024(0.61)
.031(0.79)
.264(6.71)
.287(7.29)
31)
. 181 ( 4 . 60)
LEAD CODE:
1)
2)
3)
4)
SASE
COLLECTOR
EMITTER
COLLECTOR
R1
295
Central™
CZT4033
Semlconducto. CO'Ii.
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CZT4033 type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current general purpose
amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS (TA=25 oC)
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCSO
VCEO
VESO
IC
ICM
PD
80
80
5.0
1.0
1.5
2.0
TJ,Tstg
8JA
-65 to +150
62.5
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICSO
IESO
SVCSO
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
TEST CONDITIONS
VCS=60V
VES=5.0V
IC= 1OfJ- A
IC=10mA
IE= 1OfJ- A
IC=150mA, IS=15mA
IC=500mA,IS=50mA
IC=150mA, IS=15mA
IC=500mA,IS=50mA
VCE=5.0V, IC=0.1 mA
VCE=5.0V,IC=100mA
VCE=5.0V,IC=500mA
VCE=5.0V, IC=1.0A
V CE=1 OV, IC=50mA, f=1.0MHz
VCS=10V, IE=O, f=1.0MHz
VES=0.5V, IC=O, f=1.0MHz
296
MIN
MAX
50
10
80
80
5.0
0.15
0.50
0.90
1.10
75
100
70
25
100
UNITS
nA
nA
V
V
V
V
V
V
V
300
20
110
MHz
pF
pF
All dimensions in inches (mm).
TOP VIEW
.248(8.30)
.264(6.71)
0'·7'
.063(1.60)
.067(1.70)
4
r
.130(3.30)
. 146 ( 3 . 7 1 )
1
.009(0.23)
2
.013(0.33) ~~
3
.264(6.71)
.287(7.29)
j
.091 ( 2 .31 )
.024(0.61)
.031(0.79)
. 181 ( 4 . 60)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
R1
297
Central™
CZT5338
Semlconducto. CO,,,.
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5338
type is an NPN silicon power transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for applications requiring extremely
high current amplification and switching
capability.
~TM
raJ
SOT-223 CASE
MAXIMUM RATINGS (TA=25 0 C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
100
100
6.0
5.0
1.0
2.0
VCBO
VCEO
VEBO
IC
IB
PD
V
V
V
A
A
W
°c
-65 to +150
62.5
TJ,Tstg
E>JA
°C/W
ELECTRICAL CHARACTERISTICS (T A=25 0 C unless otherwise noted)
SYMBOL
ICBO
lEBO
ICEO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCB=100V
VBE=6.0V
VCE=90V
IC=50mA
IC=2.0A, IB=200mA
IC=5.0A,IB=500mA
IC=2.0A, IB=200mA
IC=5.0A, IB=500mA
VCE=2.0V,IC=500mA
VCE=2.0V,IC=2.0A
VCE=2.0V, IC=5.0A
MIN
MAX
10
100
100
100
0.7
1.2
1.2
1.8
30
30
20
298
120
UNITS
~A
~A
~A
V
V
V
V
V
SYMBOL
fT
Cob
Cib
td
tr
ts
tf
TEST CONDITIONS
VCE=10V, IC=500mA, f=10MHz
VCS=10V, IE=O, f=1.0MHz
VSE=2.0V, IC=O, f=1.0MHz
VCC=40V, VSE=3.0V, IC=2.0A, IS1=200mA
VCC=40V, VSE=3.0V, IC=2.0A, IS1=200mA
VCC=40V, IC=2.0A, IS1=IS2=200mA
VCC=40V, IC=2.0A, IS1=IS2=200mA
MIN
30
MAX
250
1000
100
100
2.0
200
UNITS
MHz
pF
pF
ns
ns
Ils
ns
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
0' - 7'
.083(1.80)
.067(1.70)
4
r
.130(3.30)
.146(3.71)
.009(0.23)
.013(0.33)
1
2
'if.-.-
3
.264(6.71)
.287(7.29)
j
.091 ( 2 . 3 1 )
.024(0.61)
.031(0.79)
. 181 ( 4 . 60)
LEAD CODE:
1)
2)
3)
4)
SASE
COLLECTOR
EMITTER
COLLECTOR
R1
299
Central™
CZT5401
Semiconductor Corp.
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5401
type is an PNP silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount-package, designed for high
voltage amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS (TA=25 oC)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
UNITS
V
V
V
mA
W
160
150
5.0
600
2.0
VCBO
VCEO
VEBO
IC
PD
°C
-65 to +150
62.5
TJ,Tstg
8JA
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICBO
ICBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
MIN
TEST CONDITIONS
VCB=100V
VCB=100V,TA=150oC
VEB=3.0V
IC=1001lA
IC=1.0mA
IE= 1OIlA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V,IC=10mA
VCE=5.0V, IC=50mA
MAX
50
50
50
160
150
5.0
0.2
0.5
1.0
1.0
50
60
50
300
240
UNITS
nA
mA
nA
V
V
V
V
V
V
V
SYMBOL
fT
Cob
hfe
NF
TEST CONDITIONS
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=O, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200/-lA, RS=10Q
f=10Hz to 15.7kHz
MIN
100
MAX
300
6.0
200
40
8.0
UNITS
MHz
pF
dB
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
.063(1.60)
.067(1.70)
4
r
.130(3.30)
. 146 (3.71 )
1
2
.033(0.84)
.041 ( 1 . 04)
.024(0.61)
.031(0.79)
3
.264(6.71)
.287(7.29)
j
.091 ( 2 .31 )
. 181 (4.60 )
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
R1
301
Central™
CZT5551
Semiconductor Cor...
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
voltage amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
V
mA
W
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
180
160
6.0
600
2.0
VCSO
VCEO
VESO
IC
PD
-65 to +150
62.5
TJ,Tstg
8JA
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=250C unless otherwise noted)
SYMBOL
ICSO
ICSO
lEBO
SVCSO
SVCEO
BVESO
VCE(SAT)
VCE(SAT)
VSE(SAT)
VSE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCS=120V
VCS=120V,TA=100oC
VES=4.0V
MIN
IC=100~A
MAX
50
50
50
180
160
6.0
IC=1.0mA
IE=10~A
0.15
0.20
1.00
1.00
IC=10mA, IS=1.0mA
IC=50mA, IS=5.0mA
IC=10mA, IS=1.0mA
IC=50mA,IS=5.0mA
VCE=5.0V,IC=1.0mA
VCE=5.0V,IC=10mA
VCE=5.0V,IC=50mA
80
80
30
302
250
UNITS
nA
~A
nA
V
V
V
V
V
V
V
SYMBOL
TEST COND.ITIONS
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=O, f=1.0MHz
VEB=0.5V, IC=O, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200IlA, Rs=10n
f=10Hz to 15.7kHz
fT
Cob
Cib
hfe
NF
MIN
100
50
MAX
300
6.0
20
200
UNITS
MHz
pF
pF
8.0
dB
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
.063(1.60)
.067(1.70)
4
i
.130(3.30)
.146(3.71)
.009(0.23)
.013(0.33)
1
2
'if.--.
3
.264(8.71)
.267(7.29)
j
.091 ( 2 . 31 )
.024(0.61)
.031(0.79)
. 181 ( 4 . 60)
LEAD CODE:
1)
2)
3)
3)
BASE
COLLECTOR
EMITTER
COLLECTOR
R1
303
Cantral™
CZTA14 NPN
CZTA64 PNP
Semiconductor Corp.
SILICON COMPLEMENTARY
DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA 14,
CZTA64 types are complementary silicon
Darlington transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for
applications requiring extremely high gain.
SOT-223 CASE
MAXIMUM RATINGS (TA=25°C)
UNITS
V
V
V
mA
SYMBOL
Co "ector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCSO
VCEO
VESO
IC
Po
30
30
10
1,000
2.0
TJ,Tstg
eJA
-65 to +150
62.5
W
°c
°CIW
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICSO
ICEO
SVCES
VCE(SAT)
VSE(ON)
hFE
hFE
fT
MIN
TEST CONDITIONS
VCS=30V
VCE=10V
IC=1001lA
IC=100mA, IS=0.1 mA
VCE=5.0V,IC=100mA
VCE=5.0V,IC=10mA
VCE=5.0V,IC=100mA
VCE=5.0V, IC=10mA, f=100MHz
MAX
100
100
30
1.5
2.0
10,000
20,000
125
304
UNITS
nA
nA
V
V
V
MHz
All dimensions in inches (mm).
TOP VIEW
.248(8.30
.264(6.71)
0', 7'
.083(1.80)
.087(1.70)
4
i
. 130 13.30!
.146(3.71)
~
.009(0.23)
.013(0.33)
2
'i~
.033(0.84)
.041(1.04)
.024(0.81)
.031(0.79)
3
.264(8.71)
.267(7.29)
j
.091 ( 2 . 31 )
. 161 (4.80)
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
R1
305
Central™
CZTA42 NPN
CZTA92 PNP
~ILlCON
Semiconductor Co....
COMPLEMENTARY
HIGH VOLTAGE TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA42,
CZTA92 types are complementary surface
mount epoxy molded silicon planar epitaxial
transistors designed for high voltage
applications.
SOT-223 CASE
MAXIMUM RATINGS (T A=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
CZTA92
300
300
5.0
CZTA42
300
300
6.0
500
2.0
Po
UNITS
V
V
V
mA
W
°c
-65 to +150
62.5
°CIW
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICBO
lEBO
lEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
CZTA42
MIN MAX
TEST CONDITIONS
100
VCB=200V
100
VBE=6.0V
VBE=3.0V
300
IC=1001lA
300
IC=1.0mA
6.0
IE= 1OOIlA
0.5
IC=20mA, IB=2.0mA
0.9
IC=20mA, IB=2.0mA
25
VCE=10V,IC=1.0mA
40
VCE=10V,IC=10mA
40
VCE=10V,IC=30mA
VCE=20V, IC=10mA, f=100MHz 50
3.0
VCB=20V, IE=O, f=1.0MHz
306
CZTA92
MIN
MAX
250
100
UNITS
nA
nA
nA
V
300
300
5.0
V
0.5
0.9
V
V
V
6.0
MHz
pF
25
40
25
50
All dimensions in inches (mm).
TOP VIEW
.248(6.30)
.264(6.71)
0' - 7'
.063(1.60)
.067(1.70)
4
r
.130(3.30)
. 146 ( 3 . 7 1 )
~
. 009 ( 0 .23 )
.013 ( 0 .33 )
2
'1fr.-
.033(0.84)
.041 ( 1 .04 )
.024(0.61)
.031(0.79)
3
.264(6.71)
.287(7.29)
j
.091 ( 2 .31 )
. 181 ( 4 .60 )
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
R1
307
Central™
Samlconducto.
Co.p.
CZTA44
NPN SILICON EXTREMELY
HIGH VOLTAGE TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZTA44
type is a surface mount epoxy molded silicon
planar epitaxial transistors designed for
extremely high voltage applications.
SOT-223 CASE
MAXIMUM RATINGS (T A=25 0 C)
SYMBOL
Collector-Sase Voltage
Collector-Emitter Voltage
Emitter-Sase Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperaiure
Thermal Resistance
450
400
6.0
300
2.0
VCSO
VCEO
VESO
IC
PD
TJ,Tstg
8JA
-65 to +150
62.5
UNITS
V
V
V
mA
W
°c
°C/W
ELECTRICAL CHARACTERISTICS (TA=25 0 C unless otherwise noted)
SYMBOL
ICSO
ICES
IESO
SVCSO
SVCES
SVCEO
SVESO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VSE(SAT)
hFE
hFE
hFE
TEST CONDITIONS
VCS=400V
VCE=400V
VSE=4.0V
IC=1001lA
IC=1001lA
IC=1.0mA
IE=1OIlA
IC=1.0mA, IS=0.1 mA
IC=10mA, IS=1.0mA
IC=50mA, IS=5.0mA
IC=10mA, IS=1.0mA
VCE=10V,IC=1.0mA
VCE=10V,IC=10mA
VCE=10V, IC=50mA
MIN
MAX
100
500
100
450
450
400
6.0
0.40
0.50
0.75
0.75
40
50
45
308
200
UNITS
nA
nA
nA
V
V
V
V
V
V
V
V
SYMBOL
hFE
fT
Cob
Cib
TEST CONDITIONS
VCE=10V,IC=100mA
VCE=10V, IC=10mA, f=10MHz
VCB=20V, IE=O, f=1.0MHz
VES=0.5V, IC=O, f=1.0MHz
MIN
20
20
MAX
UNITS
7.0
130
MHz
pF
pF
All dimensions in inches (mm).
TOP VIEW
.248(8.30
.264(6.71)
0··7·
.063(1.60)
.067(1.70)
4
i
.130(3.30)
.148(3.71)
2
.009(0.23)
.013(0.33)
'if.--.
3
.264(6.71)
.287(7.29)
j
.091 ( 2 . 31 )
. 181 ( 4 . 80)
LEAD CODE:
1)
2)
3)
4)
BASE
COLLECTOR
EMITTER
COLLECTOR
R1
309
310
Mounting Pad Geometries
311
Mounting pad Geometries
(Dimensions in mm.)
DPAK
HDDIP
!
!
6.3 ,2.5,
I
I
-1
i
Central™
....,conducto. Co.p.
312
i
r
1.1
Mounting Pad Geometries
(Dimensions in mm.)
MELF
:m
I
--
L~6:J
~
ttl:
----------- -+-- -T
-~,
,
3.0
'~
,
I,,
I,,
L=:::~
5MB
H
I
I
iT
!
-
I
I
---: -------------1----:
!
!
i
i
--f-
~3.0~ '. I
~6.5~
I
3.0
I
-*--
'
313
Cantral™
semiconductor Corll.
Mounting Pad Geometries (Continued)
(Dimensions in mm.)
SMC
H
II
I
I
---:--
---: --
3.8
I~
L:=:::~
SMDIP
!
!
-lr--r-10.0
r--s.os-1
1
i
-1
i
r-
2.0
-+H--+H--'I
0
i
Central
T
S• •lconducto, CD'II.
"
i
314
Mounting Pad Geometries (Continued)
(Dimensions in mm.)
SOO-80
~. 2~
I
~
-j-I-~- +-1 j--
2---r-ro-
II ~2.5~ I I
~5.0~
500-323
r¥1
.5
MIN
I
-1-1 l----
+__1-I-------.~I.- - - ~I
~2.3
.1
315
Central™
Semiconductor Cor...
Mounting Pad Geometries (Continued)
(Dimensions in mm.)
SOT-23
M
Te
-:~'--+---'
I
r-
1 .8
SOT-89
r-2.2~
I/
--t~--O-":~-9
0
45
T
2.2
45
0
I
~
Eb=-t.1.5
~.
~
Centra.™
SemlconductD. CD•••
316
Mounting Pad Geometries (Continued)
(Dimensions in mm.)
SOT-143
1.8
SOT-223
~4.6~
I
I
I
ffi-EB--EB}
T
~2.3~
~
6.3
317
Central™
....Iconducto. co....
Mounting Pad Geometries
(Continued)
(Dimensions in mm.)
SOT-323
1.9
1
-I--+---....L
Central™
Semiconductor Carll.
318
Mechanical Drawings
319
Mechanical Drawings
Dimensions in inches (mm).
DPAK
TOP
r
.085(2.15)
.098(2.45)
.016(0.40)
.024(0.80)
VIEW
.248(8.30)
.288(8.80)
l.203(5.15)
.215(5.45)
I
4
r
.145(f3 . 89 )
MIN:
.053(1.35)
• . 085(1.85)
i
i f r
MUM:
: . 211 ( 5 . 35)
--...It'---L--I=T~'-_-_-_-r12'''-_-_-_-''''~T'-' __
-rU-.LJ U
q
q
.033(0.85)
.081(1.55~lJ
l
.030(0.75)1
T
.049(1.25)
.018(0.40)
.024(0.80)
'_2_22_(+1'_'_8_5)_
.085(2.15)
.112({.85)
11 .. 030
-1
.037(0.95)
MAXIMUM
.030(0.75)
.081 ( 1 .55)
.091
2.3
.09112.3
BSC
HDDIP
(0.75)
MAXIMUM
BSC
TOP VIEW
.Da5!:!! 41)
.105 C 2.87)
. 00" (0.10)
i
·'' r·
~
+
.145(3.88)
.107(2.72)
841
_ _.L-_ _
'
I
.180(4.57)
.190(4.83)
.1
::::j::b
--'=~ " / ' " "')' .. '
.040(1.02)
~-'-r
.060 ( , .27)
-r055(1.40)
.085(1.85)
Central
1M
Semiconductor Corp.
I.I~,( •.•• )
~
--a--r---------i--*-
320
.262(8.40)
.023(0.58)
Mechanical Drawings
(Continued)
Dimensions in inches (mm).
MELF
...
. 0 14 ( 0 . 3 6 )
. 022 (0 . 56 )
o
~
f
. 185 ( 4 . 70)
. 209 ( 5 . 3 1)
-'"
I
. 094 ( 2 . 39)
I-106 ( 2 .69 )
- - I-- - - - - - - - - - - t---
~
5MB
TOP VIEW
f
.030(0.76)
.060(1.52)
T
t
.200(5.08)
.220(5.59)
.004(0.10)
.008(0.20)
.006(0.15)
.012(0.30)
.086(2.18)
.096(2.44)
.160(4.06)
.180(4.57)
__L_
r
.077(1.96)
. 083 ( 2 . 1 1 )
.130(3.30)
. 150 ( 3 . 81 )
321
Central™
Semiconductor Corp.
Mechanical Drawings (Continued)
Dimensions in inches (mm).
SMC
TOP VIEW
f
T
.030(0.76)
.060(1.52)
*
.260(6.60)
.305(7.75)
.320(8.13)
.004(0.10)
.008(0.20)
'---,,-------,--1
.006(0.15)
.012(0.30)
. 115 ( 2 . 92)
I
. 121 ( 3 .07 )
.220(5.59)
.079(2.01)
.103(2.62)
SMDIP
.245(6.22)
TOP VIEW
.195(4.95)
.205(5.21)
.045 ( 1 . 14 )
• 010 ( 0 . 25)
TYPICAL
J
r
r
AC
1
AC
.320(8.13)
.365(S.27}
Sallliconductor Corp.
.003(0.08)
.013(0.33)
.430(10.92
MAXIMUM
1
c'c--
1]
~
.040(1.02)
.080(1.52)
.025(0.84)
::::I:::6r-----.--.----~--.. ~45'
Central™
,.--' c....
.290(7.37)
.310(7.87)
.245(8.22)
.255(8.48)
1
"I r---
322
Mechanical Drawings (Continued)
Dimensions in inches (mm).
500-80
...
.
r-
. 0 1 6 ( 0 .41 )
I/J :
.130(3.30)
. 146 ( 3 .71 )
~:; ~ ~ :[J;------B-:: :
t.004(0.10)
MAXIMUM
500-323
TOP VIEW
l~
~'045J,'15)
.010~.25)~~~
.014(0.35)
.053(1.35)
1
.096(2.45)
.108(2.75)
I...
063(1.60)
. 07 1 ( 1. 80 )
.1 ---I-t---x---
LW'------L1:002 (0.05)
.010(0.25)
323
Cantral™
.....lcDlHluctD. CD....
Mechanical Drawings (Continued)
Dimensions in inches (mm).
SOT-23
TOP VIEW
.110 (2.80)
.118(3.00)
.003(0.08)
.006(0.15)
.041 ( 1 .05)
NOMINAL
f
J
MAXIMUM
.106(2.70)
.047 ( 1 . 19)
.063(1.60)
MAXIMUM
-1
j
~
.014(0.35)
.020(0.50)
.037(0.94)
.050(1.28)
SOT-89
BOTTOM VIEW
.173(4.39
. 181 (4.60 )
.055(1.40)
.063(1.60)
.063(1.60)
.071 ( 1 .80 )
r
.092(2.34)
.100(2.54)
.154 (3.91 )
. 165 ( 4 . 19)
1
6'----.015(0.38)
.016 (0.41 )
.039(1.00)
.059(1.50)
.013(0.33)
.019(0.48)
.118(3.00)
Central™
SemlconduClor Corp.
324
Mechanical Drawings
(Continued)
Dimensions in inches (mm).
SOT-143
TOP VIEW
. 110 (2.79 )
. 118 (3.00 )
.004(0.10)
.005(0.13)
I•. 0 7 9 ( 2 . 0 1 ) .1
,
~
1
6'
,
--L-~----=---+L--.....c/ 15'
f
.047(1.19)
.051(1.30)
J
*
.005(0.13)~
.037(0.94)
.043(1.09)
.014(0.36)
.018(0.46)
.030(0.76)
.033(0.84)
i..
071(1.80~i
SOT-223
TOP VIEW
.248(6.30)
.264(6.71)
0'· 7'
.063(1.60)
.067(1.70)
4
r
.130(3.30)
. 146 (3.71 )
.009(0.23)
.013(0.33)
.264(6.71)
.287(7.29)
j
'if..-.-
325
Central™
Semiconductor Corll.
Mechanical Drawings (Continued)
Dimensions in inches (mm).
SOT-323
TOP VIEW
.003(0.08)
.006(0.15)
.063(1.60)
.087(2.22)
r
I
.047 ( 1 . 19) I
:".055 (1.40 )':
004 (0'10)
.010(0.25)
-ll<---___
I
I,,
- -.......-~- ,,
-=rl-:
t
10·~
~-1
.079(2.00)
.087(2.22)
j
.045 ( 1 . 14)
.053(1.35)
II
*
.008(0.20)
.016 (0.41 )
MAXIMUM
.031(0.79)
.039(1.00)
LEAD CODE
PIN 1
PIN2
PIN 3
SOT·23 DIODE (SINGLE)
SOT-23 DIODE (DUAL, COMMON CATHODE)
SOT-23 DIODE (DUAL, COMMON ANODE)
SOT-23 DIODE (DUAL, IN SERIES)
SOT-23 JFET
SOT-23 STABISTOR
SOT-23 SCR
SOT-23 TRANSISTOR
SOT-23 ZENER (SINGLE)
SOT-23 ZENER (DUAL, COMMON ANODE)
SOT-B9 SCHOTIKY RECTIFIER
SOT-B9 TRANSISTOR
SOT-B9 TRIAC
SOT-B9 ZENER DIODE
SOT-323 TRANSISTOR
SOT-323 DIODE (SINGLE)
NO CONNECT!ON
ANODE
CATHODE
CATHODE
SOURCE'
NO CONNECTION
GATE
EMITIER
NO CONNECTION
CATHODE
ANODE
EMITIER
GATE
ANODE
BASE
ANODE
ANODE
ANODE
CATHODE
ANODE
DRAIN'
ANODE
CATHODE
BASE
ANODE
CATHODE
CATHODE
COLLECTOR
MT2
CATHODE
EMITIER
NO CONNECTION
CATHODE
CATHODE
ANODE
CATHODE, ANODE
GATE
CATHODE
ANODE
COLLECTOR
CATHODE
ANODE
ANODE
BASE
MTl
ANODE
COLLECTOR
CATHODE
PIN 1
PIN 2
PIN3
PIN4
SOT-143 DIODE (DUAL, ISOLATED)
SOT-223 TRANSISTOR
SOT-223 SCR
SMDIP BRIDGE RECTIFIER
ANODE #1
BASE
CATHODE
NEGATIVE
ANODE #2
COLLECTOR
ANODE
POSITIVE
CATHODE #2
EMITIER
GATE
AC
CATHODE #1
COLLECTOR
ANODE
AC
PIN 1
PIN 2
PIN3
TAB
BASE
ANODE
ANODE
COLLECTOR
CATHODE
CATHODE
EMITTER
ANODE
ANODE
COLLECTOR
CATHODE
CATHODE
DPAK TRANSISTOR
DPAK SCHOTTKY RECTIFIER
DPAK RECTIFIER
• SOURCE AND DRAIN ARE INTERCHANGEABLE ON JFETs.
Central™
.omlconductor cor...
326
Engineering Specifications
Page
Tape and Reel Dimensions and Orientation
328
Reel Labeling Information
331
Standard Packaging Base
331
Device Marking Information
331
Reel Packing Details
332
Package Labeling
333
Bar Code Identification Label
334
327
Tape Dimensions and Orientation
Smm
r ,-----------,
SOO-80
7.7
8.3
1
??OORO
+H
~ ~h+-
SOT-143
i
7.7
8.3
8.3
1
Direction of Unreeling
•
Cantral
T
•••Iconductor corp.
"
328
(Dimensions in mm.)
Tape Dimensions and Orientation
(Dimensions in mm.)
(Continued)
12mm
HDDIP
T
11 . 7
12.3
MELF
n-
::-,
cr=J
-
R
R
R
H
R
_R
+
-
+
-
+
-
M
M
M
M
M
M
T
rl
Ir.l
r---r-r-r--
~~~~~~~
~ ?99 oo Roq
~ ~~*
11 . 7
12.3
I~
~ ? 9 9 00 R oq
~
4.1
4.1
1 .6
SOT-89
5MB
T
T J~
~ ~I~
rl
000
~? 9 9
R q
1 1 . 7
12 . 3
0 0
1 1 . 7
12. 3
~ ?99 oo Roq
0
~
~ ~ ~h+
4. 1
SOT-223
T J~
~~
11 . 7
12.3
~?99 oo Roq
~
4. 1
Direction of Unreeling
•
329
Cantral™
S.mlconductor Corll.
Tape Dimensions and Orientation
(Continued)
16mm
DPAK
Ir--rAl-rAl16.3~~
~
099 00 ROOO
~ ~ ~~
4 . 1
1 . 6
-w
rr-oo
SMDIP
0------'+
~
099 00 ROOO
~ ~ ~~
4. 1
1 .6
Direction of Unreeling
•
Central™
......conducto' co,p.
330
(Dimensions in mm.)
Bulk packed
Packaging Base
Reel Lallellng Information
Each reel is labeled with the following
information:
OPAK
100/ Vial
HOOIP
100/ Sleeve
MELF
1K / Vial
5MB
500/Vial
5MC
100/ Vial
5MOIP
50/ Sleeve
500-80
1K/Vial
500-323
1K/Vial
50T-23
1K / Vial
50T-89
1K / Vial
50T-143
1K / Vial
50T-223
250/Vial
50T-323
1K / Vial
Central Part Number
Customer Part Number
Purchase Order Number
Quantity
Lot Number
8hip Date
Marking Code'
* Applies to 80T-23, 80T-143, 80T-323,
80D-323, HD DIP, 8MB & 8MC devices
only.
Taped a Reeled
packaging Base
12
13
3,000
MELF
12
7
13
1,500
5,000
5MB"
12
13
3,000
5MC"
16
13
3,000
5MOIP"
16
13
500-80
8
HO DIP"
Device Marldng Information
~
Marking Details
DPAK
Full Part Number
1,000
HDDIP
4 Digit Code
7
13
2,500
10,000
MELF
Cathode Band
8MB
3-4 Digit Code
8MC
3-4 Digit Code
500-323
8
7
13
3,000
10,000
50T-23
8
7
13
3,000
10,000
8MDIP
Full Part Number
80D-80
Cathode Band
50T-89
12
7
13
1,000
4,000
80D-323
2 Digit Code
80T-23
2-3 Digit Code
50T-143
50T-223
50T-323
8
7
13
3,000
10,000
12
7
13
1,000
4,000
8
7
13
3,000
10,000
80T-89
Full Part Number
80T-143
2-3 Digit Code
80T-223
Full Part Number
80T-323
2-3 Digit Code
• Available on 13" reels only.
331
Central™
S....lconducto.
CO'II.
Reel packlnll Details
.... i>EVICE'
DPAK TR13
13K
13 Reels
14X14X8
36X 36 X 20
22
10
HD DIPTR13
39K
13 Reels
14X14X8
36X 36 X 20
31
14
10.5K
7 Reels
4X8X8
10X20X20
5
3
70K
14 Reels
8X8X8
20X 20 X 20
9'
5
5MB TR13
33K
11 Reels
14X14X8
36X36 X 20
22
10
SMC TR13
39K
13 Reels
14X14X8
36X36 X 20
22
10
SMDIPTR13
13K
13 Reels
14X14X8
36X36X 20
22
10
SOD-SOTR
25K
10 Reels
4X8X8
10 X 20 X 20
4
2
47.5K
19 Reels
8X8X8
20 X20X 20
7
4
30K
10 Reels
4X8X8
10 X 20 X 20
3
2
57K
19 Reels
8X8X8
20 X 20X 20
5
3
30K
10 Reels
4X8X8
10 X 20 X 20
3
2
57K
19 Reels
8X8X8
20X20X20
5
3
7K
7 Reels
4X8X8
10 X 20 X 20
3
2
14K
14 Reels
8X8X8
20X20X20
6
3
30K
10 Reels
4X8X8
10 X 20 X 20
3
2
57K
19 Reels
8X8X8
20X 20X 20
5
3
7K
7 Reels
4X8X8
10 X 20 X 20
4
2
14K
14 Reels
8X8X8
20X20X 20
7
4
30K
10 Reels
4X8X8
10 X 20 X 20
3
2
57K
19 Reels
8X8X8
20X20X20
5
3
MELFTR
SOD-323TR
SOT-23 TR
SOT-S9TR
SOT-143 TR
SOT-223TR
SOT-323TR
ORDERING INFO:
•
•
•
•
•
For devices taped and reeled on 7" reels, add TR suffix to part number.
For devices taped and reeled on 13" reels, add TR13 suffix to part number
For devices bulk packed, add BK suffix to part number.
All SMDs are available bulk packed, for prototype and manual placement applications.
Bulk SMDs are shipped in black plastic, antistatic vials with hinged lids.
Central™
Semiconductor Cor...
332
Central™
Semiconductor Corp.
1.0. Purpose:
Lallellnll
511ecificatian
This Specification defines the layout and identification of the Inner Cartonl
Reel Label used by Central Semiconductor Corp.
1.1. This label must be affixed to each inner cartonlreel in the shipment.
1.2. Label Information and Layout:
1) CENTRAL PIN:
Line 1)
2) CUSTOMER PIN:
Line 2) Customer Part Number
(Up to 25 Characters)
3) PURCHASE O/N:
Line 3) Customer's Purchase Order
Number (Up to 25 Characters)
4) QUANTITY:
Line 4) Quantity of Devices.
(Up to 15 Characters)
5) LOT NUMBER:
Line 5) Lot Number of the Devices.
(Up to 25 Characters)
6) DATE CODE:
Line 6) Date Code of the Devices.
(Up to 5 Characters)
7) SHIP DATE:
Line 7) Ship Date - The day cartons are
shipped from Central.
(Month-Day-Year)
8) MARKING CODE:
Line 8) Marking of the Device.
(Applies to HD DIP, SOT-23,
SOT-143, SOT-323, SOD-323,
5MB and SMC Devices only.)
333
Central Part Number
Number (Up to 25 Characters)
Central™
Semiconductor Corp.
BarCode
Identification Lallel
Note: Bar Code Label Available
Upon Request.
1.0. Purpose:
This Specification defines the layout and identification of the Bar Code Label
used by Central Semiconductor Corp.
1.1. This label must be affixed to each carton in the shipment and to the reverse
side of the packing slip.
1.2. Bar codes are type 3-of-9 (Code 39) Symbology.
1.3. Label Information and Layout:
P _0 _
NO _
~~~~~~~~~~
111111111111111111
1)
PART
NO _
2)
QUANT I TY
1111111111111111111111111111111111111111111111111111
1111
Line 2) Customer Part Number
(Up to 30 Characters)
~~~~~~~~~~
1~1 !1 1~1~1 1 ~1 ~1 1~1~ I I~I~l lil l~1 1 1
II
~~~~~~~~~~
3)- -1~~elllll~111
-----r----NO _CARTONS
~~
4)
Line 1) Customer Purchase
Order Number (Up to 30
Characters)
SHIPDATE
5} I~ill
~~_~~_~~
ill~~1
--------!..----CENTRAL SEMICONDUCTOR CORP. HAUPPAUGE, NY USA
6 } PIN: XXXXXXXXXX
Line 3) Total Quantity in Shipment.
(Up to 15 Characters)
Line 4) Total Number of Cartons in
Shipment. (Up to 2
Characters)
Line 5) Ship Date - The day
cartons are shipped from
Central.
(Month-Day-Year)
Lioe 6)
~:~':,~;~~~:~o;.o~
Central Part Number
(Up to 30 Characters)
Label Size - 4" x 5"
334
USA
145 Adams Avenue
Hauppaug e, NY 11788 USA
TEL (516) 435-1110
FAX (516) 435-1824
MANUFACTURERS OF
WORLD CLASS DISCRETE SEMICONDUCTORS
SMDDB -5
Source Exif Data:
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