1995_Motorola_Rectifier_Device_Data 1995 Motorola Rectifier Device Data

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Index and Cross Reference
Selector Guide

II

Schottky Data Sheets •
Ultrafast Data Sheets •
Standard and Fast Recovery •
Data Sheets
Tape and Reell •
Packaging Specifications •
Surface Mount Information
TO-220 Leadform Options
Package Outline Dimensions
and Footprints
AR598: Avalanche Capability of
Today's Power Semiconductors

•
•
•
•

®

MOTOROL.A

Rectifier Device Data
This book presents technical data for Motorola's broad line of rectifiers. Complete
specifications are provided in the form of data sheets and accompanying selection
guides provide a quick comparison of characteristics to simplify the task of choosing
.
the best device for a circuit.
The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies.

Motorola reserves the rig~t to make changes without further notice to any products herein. Motorola makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does Motorola assume any liability ariSing out 01 the application or use of any product or Circuit, and specili·
cally disclaims any and all liability, including without limitation consequential or incidental damages. ''Typical''
parameters can and do vary in different applications. All operating parameters, including ''Typicals'' must be
validated for each customer application by customer's technical experts. Motorola does not convey any
license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized lor use as components in systems intended for surgical implant into the body, or other applications
intendedto support or sustain life, orfor any other application in which the failure olthe Motorola product could
create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products
for any such unintended or unauthorized application, Buyershall indemnify and hold Motorola and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was
negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of
Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

®

© Motorola, Inc. 1995
Previous Edition © 1993
"All Rights Reserved"

Printed in U.S.A.

DATA CLASSIFICATION
PRODUCT PREVIEW
Data sheets herein contain information on a product under development. Motorola reserves the right to change or discontinue
these products without notice.

ADVANCED INFORMATION
Data sheets herein contain information on new products. Specifications and information are subject to change without notice.

FORMAL
For a fully characterized device there must be devices in the warehouse and price authorization.

DESIGNER'S
The Designer's Data Sheet permits the design of most circuits entirely from the information presented. Limit curves - representing
boundaries on device characteristics - are given to facilitate "worst case" design.

MOTOROLA DEVICE CLASSIFICATIONS
In an effort to provide up-to-date information to the customer regarding the status of any given device, Motorola has classified
all devices into three categories: "Preferred" products, "Currenf' products and "Not Recommended for New Design" products.

PREFERRED PRODUCTS
A Preferred Type is a device which is recommended as a first choice for future use. These devices are "preferred" by virtue of
their performance, price, functionality, or combination of attributes which offer the overall "best" value to the customer. This
category contains both advanced and mature devices which will remain available for the foreseeable future.
"Preferred Devices" are identified in the Selector Guide Section and the Data Sheet Sections.

CURRENT PRODUCTS
Device types identified as "currenf' may not be a first choice for new designs, but will continue to be available because of the
popularity and/or standardization or volume usage in current production designs. These products can be acceptable for new
designs but the preferred types are considered better alternatives for long term usage.
Any device that has not been identified as a 'preferred device" is a "currenf' device.

NOT RECOMMENDED FOR NEW DESIGN PRODUCTS
Products designated as "Not Recommended for New Design" have become obsolete as dictated by poor market acceptance,
or a technology or package that is reaching the end of its life cycle. Devices in this category have an uncertain future and do
not represent a good selection for new device designs or long term usage.
The RF Device Data book does not contain any "Not Recommended for New Design" devices.

Designer's, MEGAHERTZ, POWERTAP, SCANSWITCH, SWITCHMODE and Surmetic are trademarks of Motorola Inc.
Thermal Clad Is a trademark of the Bergquist Company.

Section 1
Index and Cross Reference

Rectifier Device Data

Index and Cross Reference

1-1

Index and Cross Reference
The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by
Motorola or for which Motorola manufactures a suitable equivalent. Where the Motorola part number differs from the industry part
number, the Motorola device is a form, fit and function replacement for the industry type number - however, subtle differences in
characteristics and/or specifications may exist. The part numbers listed in this Cross Reference are in computer sort.

Industry
Part Number

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

Page
Number

Industry
Part Number

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

10CTF10
10CTF20
10CTF30
10CTF40
100L1
100L2
10T0030
10T0035
10T0040
10T0045

MUR840
MUR840
MUR840
MUR840
1N4934
1N4935
MBR1045
MBR1045
MBR1045
MBR1045

4-56
4-56
4-56
4-56
5-3
5-3
3-86
3-86
3-86
3-86

1N4245GP
1N4246
1N4246GP
1N4247
1N4247GP
1N4248
1N4248GP
1N4249
1N4249GP
1N4933

110003
110004
110005
110006
110009
110010
12CT0030
12CTOO35
12CT0040
12CT0045

1N5818
1N5819
MBR160
MBR160
MBR1100
MBR1100

3-38
3-38
3-43
3-43
3-46
3-46
3-64
3-64
3-64
3-64

1N4933GP
1N4934
1N4934GP
1N4935
1N4935GP
1N4936
1N4936GP
1N4937
1N4937GP
1N4942

3-tJ4
3-64
5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-2

1N4942GP
1N4943
1N4944
1N4944GP
1N4945
1N4946
1N4946GP
1N5185
1N5185GP
1N5186

1N4935
1N4936
1N4936
1N4936
1N4937
1N4937
1N4937
MR852
MR852
MR852

5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-2

1N5186GP
1N5187
1N5187GP
1N5188
1N5188GP
1N5189
1N5189GP
1N5190
1N5190GP
1N5400

MR852
MR852
MR852
MR856
MR856
MR856
MR856
MR856
MR856

5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-2

1N5401
1N5402
1N5403
1N5404
1N5405
1N5406
1N5415
1N5416
1N5417
1N5418

15CTOO35
15CT0045
1N2069,A
1N2070,A
1N2071 ,A
1N3611
1N3611GP
1N3612
1N3612GP
1N3613
1N3613GP
1N3614
1N3614GP
1N3957
1N3957GP
1N4001
1N4001GP
1N4002
1N4002GP
1N4003
1N4003GP
1N4004
1N4004GP
1N4005
1N4005GP
1N4006
1N4006GP
1N4007
1N4007GP
1N4245

MBR1545CT
MBR1545CT
MBR1545CT
MBR1545CT
MBR1545CT
MBR1545CT
1N4003
1N4004
1N4005
1N4003
1N4003
1N4004
1N4004
1N4005
1N4005
1N4006
1N4006
1N4007
1N4007
1N4001
1N4001
1N4002
1N4002
1N4003
1N4003
1N4004
1N4004
1N4005
1N4005
1N4006
1N4006
1N4007

Index and Cross Reference

1-2

1N4007
1N4003

Page
Number

1N4003
1N4004
1N4004
1N4005
1N4005
1N4006
1N4006
1N4007
1N4007

5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-2
5-3

1N4933

5-3
5-3
5-3
5-3
5-3
5-3
5-3
5-3
5-3
5-3

1N4933

1N4934
1N4934
1N4935
1N4935
1N4936
1N4936
1N4937
1N4937
1N4935

1N5400
1N5401
1N5402
1N5404
1N5404
1N5406
1N5406
MR852
MR852
MR852
MR856

5-3
5-3
5-3
5-3
5-3
5-3
5-3

5-8
5-6
5-8

5-8
5-6
5-8
5-8
5-6
5-6
5-6
5-6
5-6
5-5
5-5
5-5
5-5
5-5
5-5
5-5
5-6
5-6
5-6
5-6

Rectifier Device Data

INDEX AND CROSS REFERENCE (continued)
Industry
P.art Number

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

Page
Number

Industry
Part Number

Motorola
Nearest
Replacement

1N5419
1N5420
1N5614
1N5615
1N5615GP
1N5616
1N5617
1N5617GP
1N5618
1N5619

MR856
MR856
1N4003
1N4935
1N4935
1N4004
1N4936
1N4936
1N4005
1N4937

5-6
5--6
5-2
5-3
5-3
5-2
5-3
5-3
5-2
5-3

20F0020
20F0030
20F0035
20F0040
20F0045
210003
21 D004
21 F0030
21 F0035
21 F0040

MBR3545
MBR3545
MBR3545
MBR3545
MBR3545

1N5619GP
1N5620
1N5802
1N5803
1N5804
1N5805
1N5806
1N5807
1N5808
1N5809

1N4937
1N4006
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420

5-3
5-2
4-31
4-31
4-31
4-31
4-31
4-31
4-31
4-31

21 F0045
28CP0030
28CP0040
30CT0030
30CT0035
30CT0040
30CT0045
30DL1
30DL2
310003

MBR3545

MUR420
MUR420

1N5810
1N5811
1N5817
1N5818
1N5819
1N5820
1N5821
1N5822
1N5823
1N5824

1N5817
1N5818
1N5819
1N5820
1N5821
1N5822
1N5823
1N5824

4-31
4-31
3-38
3-38
3-38
3-49·
3-49
3-49
3-60
3-60

31 D004
310005
310006
310009
310010
40CD0020
4OCD0030
4OCD0035
40CD0040
40CD0045

1N5825
1N5826
1N5827
1N5828
1N5829
1N5830
1N5831
lN5832
lN5833
lN5834

1N5825
1N5826
1N5827
lN5828
1N5829
1N5830
lN5831
lN5832
lN5833
lN5834

3-60·
3-135
3-135
3-135
3-139
3-139
3-139
3-152
3-152
3-152

40Dl
40D2
40D4
4OD6
40D8
50H0020
50H0030
50H0035
50H0040
50H0045

lN6095
lN6096
lN6097
lN6098
1N6391
lN6392
200CN0020
20QCN0030
200CN0035
200CN0040

lN6095
lN6096
lN6097
lN6098
MBR3545

3-144
3-144
3-156 .
3-156
3-148
3-168
3-183
3-183
3-183
.3-183

50S0030
50S0040
51 H0045
52H0030
52H0035
52H0040
52H0045
55HOO15
55H0020
55H0025

3-183
3-182
3-182
3-182
3-182
3-182
3-69
3-:69
3-69
3-69

55H0030
60CD0020
60CD0030
60CD0035
60CD0040
60CD0045
6A05
6Al
6Al0
6A2

2POCN0045
201CN0020
201CN0030
201CN0035
201CN0040
201CNOO45
20CT0030
20CT0035
20CT0040
20CT0045

MBR6545
MBRP30045CT
MBRP30045CT
MBRP30045CT
MBRP30045CT
MBRP30045CT
MBRP20045CT
MBRP20045CT
MBRP20045CT
MBRP20045CT
MBRP20045CT

Rectifier Device Data

MBR2045CT
MBR2045CT
MBR2045CT
MBR2045CT

Motorola
Similar
Replacement

lN5821
lN5822
MBR3545
MBR3545
MBR3545

MBR3045PT
MBR3045PT
MBR2545CT
MBR2545CT
MBR2545CT
MBR2545CT
MR852
MR852
lN5821

Page
Number
3-148
3-148
3-148
3-148
3-148
3-49
3-49
3-148
3-148
3-148
3-148
3-119
3-119
3-80
3-80
3-80
3-80
5-6
5--6
3-49

lN5822
MBR360
MBR360
MBR3100
MBR3100

3-49
3-53
3-53
3-,-57
3-57
3-178
3-178
3-178
3-178
3-178

MR754
MR754
MR754
MR760
MR760

5-8
5-8
5-8
5-8
5-8
3-164
3-164
3-164
3-164
3-164

MBR3045CT
MBR3045CT
MBR3045CT
MBR3045CT
MBR3045CT

MBR6045
MBR6045
MBR6045
MBR6045
MBR6045
lN5824
lN5825
MBR6045
MBR6045
MBR6045
MBR6045
MBR6045
MBR7545
MBR7545
MBR7545
MBR7545
MBR3045CT
MBR3045CT
MBR3045CT
MBR3045CT
MBR3045CT
MR754
MR754
MR760
MR754

3-60
3-60
3-164
3-164
3-164 .
3-164
3-164
3-172
3-172
3-172
3-172
3-178
3-178
3-178
3-178
3-178
5-8
5-8
5-8
5-8

Index and Cross Reference
1-3

INDEX AND CROSS REFERENCE
Industry
Part Number
6A4
6A6
6A8
75HQ030
75HQ035
75HQ040
75HQ045
85HQ030
85HQ035
85HQ040
85HQ045
A114A
A114B
A114C
A114D
A114E
A114F
A114M
A115A
A115B

Motorola
Nearest
Replacement

Motorola
Similar
Replacement
MR754
MR760
MR760

MBR8045
MBR8045
MBR8045
MBR8045
MBR8045
MBR8045
MBR8045
MBR8045
1N4934
1N4935
1N4936
1N4936
1N4937
1N4933
1N4937
MR852
MR852

(continued)
Page
Number

5-8
5-8

Industry
Part Number

5-8
3-174
3-174
3-174
3-174
3-174
3-174
3-174
3-174
5--3
5--3
5--3
5--3
5--3
5-3
5-3
5-8
5-8

BYS93-50
BYS9S-40
BYS9S-45
BYS95-50
BYS97-40
BYS97-45
BYS97-50
BYS98-40
BYS98-45
BYS98--50

MBRP30060CT
MBRP20045CT
MBRP20045CT
MBRP20060CT
MBRP20045CT
MBRP20045CT
MBRP20060CT
MBRP20045CT
MBRP20045CT
MBR1545CT
MUR1660CT
MUR1660CT
MUR1660CT
MUR1560
MUR1560
MUR1560
MBR1545CT
MBR1545CT

MR856
MR856
MR856
MR852
MR856
1N4002
1N4004
1N4004
1N4005
1N4001

5-6
5-8
5-8
5-8
5-2
5-2
5-2
5-2
5-2'

BYT28--300
BYT28-400
BYT28--500
BYT79--300
BYT79-400
BYT79--500
BYV18--35
BYV18-45
BYV19--35
BYV19-45

A14M
A14N
A14P
AR25A
AR25B
AR25D
AR25G
AR25J
AR25K
AR25M

1N4005
1N4006
1N4007
MR2504
MR2504
MR2504
MR2504
MR2510
MR2510
MR2510

5-2
5-2
5-2
5-12
5-12
5-12
5-12
5-12
5-12
5-12

BYV20--30
BYV20-45
BYV22--35
BYV22-45
BYV23--35
BYV23-45
BYV26A
BYV26B
BYV26C
BYV27-100

ARS25A
ARS25B
ARS25D
ARS25G
ARS25J
ARS25K
ARS25M
BY229-200
BY229-400
BY229--600

MR2504
MR2504
MR2504
MR2504
MR2510
MR2510
MR2510

5-12
5-12
5-12
5-12
5-12
5-'12
5-12
4--56
4--56
4--56

BYV27-150
BYV27-80
BYV28--100
BYV28--150
BYV28--50
BYV29--300
BYV29-400
BYV29--500
BYV33--35
BYV33-40

4-'56
4--56
4--56
4--56
4--90
4-90
4--90
4--90

BYV33-45
BYV39--35
BYV39-40
BYV39-45
BYV43--35
BYV43-40
BYV43-45
BYW29--100
BYW29--150
BYW29--200

BYP21-100
BYP21-150
BYP21-200
BYP21-50
BYP22-100
BYP22-150
BYP22-200
BYP22-80
BYQ28--100
BYQ28-150

Index and Cross Reference
1--4

MUR820
MUR820
MUR820
MUR820
MUR3020PT
MUR3020PT
MUR3020PT
MUR3020PT
MUR1620CT
MUR1620CT

Motorola
Similar
Replacement

BYQ28--200
BYQ28--50
BYR29-800
BYS76
BYS80
BYS92-40
BYS92-45
BYS92-50
BYS93-40
BYS93-45

A115C
A115D
A115E
A115F
A115M
A14A
A14C
A14D
A14E
A14F

MUR820
MUR840
MUR860

Motorola
Nearest
Replacement

5-8

4--46
4--46

MUR1620CT
MUR1620CT
MUR860
MBR7545
MBR3045CT
MBRP20045CT
MBRP20045CT
MBRP20060CT
MBRP30045CT
MBRP30045CT

MBR1045
MBR1045
1N5827
1N5828
MBR3545
MBR3545
MBR8045
MBR8045
MUR120
MUR140
MUR160
MUR120
MUR120
MUR120
MUR420
MUR420
MBR2045CT
MUR1560
MUR1560
MUR1560
MBR2045CT
MBR2045CT
MBR2045CT
MBR1645
MBR1645
MBR1645
MBR2545CT
MBR2545CT
MBR2545CT
MUR820
MUR820
MUR820

Page
Number
4--46
4--46
4--56
3-172
3-178
3-182
3-182
3-182
3-183
3-183
3-183
3-182
3-182
3-182
3-182
3-182
3-182
3-182
3-182

3-64
4--46
4--46
4--46
4--71
4--71
4--71
3-84
3-84
3-86
3-86
3-135
3-135
3-148
3-148
3-174
3-174
4--23
4--23
4--23
4--23
4--23
4--23
4--31
4--31
3-89
4--71
4--71
4--71
3-89
3-89
3-89
3-92
3-92
3-92
3-80
3-80
3-80
4--56
4--56
4--56

Rectifier Device Data

INDEX AND CROSS REFERENCE
Industry
Part Number

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

(continued)
Page
Number

Industry
Part Number

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

Page
Number

BYW29--50
BYW29--50
BYW8Q-l00
BYWBQ-150
BYWBQ-200
BYW8Q-50
CPT12035
CPT12045
CPT12050
CPT20035

MUR820
MUR820
MUR820
MURB20
MURB20
MUR820
MBRP20045CT
MBRP20045CT
MBRP20060CT
MBRP20045CT

4-56
4-56
4-56
4-56
4-56
4-56
3-182
3-182
3-182
3-182

FE16F
FE16G
FE1A
FE1B
FE1C
FE1D
FE2A
FE2B
FE2C
FE2D

MUR1660CT
MUR1660CT
MUR120
MUR120
MUR120
MUR120
MUR420
MUR420
MUR420
MUR420

4-46
4-46
4-23
4-23
4-23
4-23
4-31
4-31
4-31
4-31

CPT20045
CPT20050
CPT20120
CPT20125
CPT30035
CPT30045
CPT30050
EGP10A
EGP10B
EGP10C

MBRP20045CT
MBRP20060CT
MBRP20030CTL
MBRP20030CTL
MBRP30045CT
MBRP30045CT
MBRP30060CT
MUR120
MUR120
MUR120

3-182
3-182
3-1Bl
3-181
3-1B3
3-183
3-183
4-23
4-23
4-23

FE3A
FE3B
FE3C
FE3D
FE5A
FE5B
FE5C
FE5D
FE6A
FE6B

MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420

4-31
4-31
4-31
4-31
4-31
4-31
4-31
4-31
4-31
4-31

EGP10D
EGP20A
EGP20B
EGP20C
EGP20D
EGP30A
EGP30B
EGP30C
EGP30D
EGP50A

MUR120

4-23
4-31
4-31
4-31
4-31
4-31
4-31
4-31
4-31
4-31

FE6C
FE6D
FE8A
FE8B
FE8C
FE8D
FE8F
FE8G
FEP16AT
FEP16BT

MUR420
MUR420
MUR820
MUR820
MUR820
MUR820
MUR840
MUR840
MUR1620CT
MUR1620CT

4-31
4-31
4-56
4-56
4-56
4-56
4-56
4-56
4-46
4-46

4-31
4-31
4-31
3-38
4-23
4-23
5-3
4-23
3-36

FEP16CT
FEP16DT
FEP16FT
FEP16GT
FEP16HT
FEP16JT
FES16AT
FES16BT
FES16CT
FES16DT

MUR1620CT
MUR1620CT
MUR1660CT
MUR1660CT
MUR1660CT
MUR1660CT
MUR1520
MUR1520
MUR1520
MUR1520

4-46
4-46
4-46
4-46
4-46
4-46
4-71
4-71
4-71
4-71

3-34
4-56
4-31
3-178
3-135
3-152
3-164
4-56
3-34
4-56

FES16FT
FES16GT
FES16HT
FES16JT
FES8AT
FESBBT
FES8CT
FES8DT
FES8FT
FES8GT

MUR1560
MUR1560
MUR1560
MUR1560
MUR820
MUR820
MUR820
MUR820
MUR840
MUR840

4-71
4-71
4-71
4-71
4-56
4-56
4-56
4-56
4-56
4-56

4-56
3-86
4-71
4-90
4-90
3-176
4-46
4-46
4-46
4-46

FES8HT
FES6JT
FR061
FR061L
FR062
FR062L
FR063
FR063L
FR064
FR065

MUR860
MUR660
lN4933

4-56
4-56
5-3
5-3
5-3

EGP50B
EGP50C
EGP50D
ERABl
ERB35
ERB44
ERB91
ERC24
ERC3B
ERC62

MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
lN5819
MUR120
lN4935
MUR120
lN4936
MUR140
MBR1045

ERCBO
ERC90
ERC91
ERD80
ERDB1
ERE81
ERG81,A
ESAB33
ESAB62
ESAB92

MBR745
MUR820
MUR420

ESAC33
ESAC82
ESAC92
ESAC93
ESAD33
ESAD61
FE16A
FE16B
FE16C
FE16D

MUR820
MBR1045
MUR1520

5-3

MBR3045CT
lN5628
lN5834
MBR6045
MUR820
MBR745
MUR620

MUR3020PT
MUR3040PT
MBR3045CT

Rectifier Device Data

MUR1620CT
MUR1620CT
MUR1620CT
MUR1620CT

lN4933
lN4934
lN4934

5-3
lN4935

lN4935
lN4936
lN4937

5-3
5-3
5-3
5-3

Index and Cross Reference

1-5

INDEX AND CROSS REFERENCE
Motorola
Industry
Part Number

FR065L
FR065L,
FR101
FR102
FR103
FR104
FR105
FR251
FR252
FR253

Nea~est

Replacement

Motorola
Similar
Replacement

1N4936
1N4937
1N4933
1N4934
1N4935
1N4936
1N4937
MR852
MR852
MR852

(continued)
Page
Number

Industry
Part Number

MUR820

4-23
4-31
4-31
4-31
4-31 '
4-31
4-31
4-31
4-,31
4-56

GI1402
GI1403
GI1404
GI2401
GI2402
GI2403
GI2404
GI2500
GI2501
GI2502

MUR820
MUR820
MUR820
MUR1620CT
MUR1620CT
MUR1620CT
MUR1620CT
MR2504
MR2504
MR2504

4-56
4-56
4-56
4-46
4-46
4-46
4-46
5-12
5-12
5-12

MR2504
MR2510
MR2510
MR251 0

5-12
5-12
5-12
5-12
3-60
3-60
3-60
5--£
5--£
5-8

MR852
MR852
MR852
MR856
MR856
MUR3020PT
MUR3020PT
MUR3020PT

FRM3220CC
FRP1605CC
FRP1610CC
FRP1615CC
FRP1620CC
FRP805
FRP810
FRP815
FRP820
FST1240

MUR3020PT
MUR1620CT
MUR1620CT
MUR1620CT
MUR1620CT
MUR820
MUR820
MUR820
MUR820
MBR1545CT

4-90
4-46
4-46
4-46
4-46
4-56
4-56
4-56
4-56
3--B4

GI2504
GI2506
GI2508
GI2510
GI5823
GI5824
GI5825
GI750
GI751
GI752

FST1245
FST1540
FST1545
FST20035
FST20040
FST20045
FST20050
FST2040
FST2045
FST2050

MBR1545CT
MBR1545CT
MBR1545CT

3--£4
3--£4
3-64
3-182
3-182
3-182
3-182
3-69
3--£9
3-73

GI754
GI756
GI758
GI850
GI851
GI852
GI854
GI856
GP10A
GP10B

3-183
3-183
3-183
3-183
3-80
3-80
3-182
3-182
3-182
3-182

GP10D
GP10G
GP10J
GP10K
GP10M
GP80A
GP80B
GP80D
GP80G
GP80J

5-2
5-2
5-2
5-2
5-2
5-2
5-2
4-23
4-23
4-23

HER101
HER102
HER103
HER104
HER105
HER151
HER152
HER153
HER154
HER155

FST30035
FST30040
FST30045
FST30050
FST3040
FST3045
FST6035
FST6040
FST6045
FST6050

MBR2045CT
MBR2045CT
MBR2060CT
MBRP30045CT
MBRP30045CT
MBRP30045CT
MBRP30060CT
MBR2545CT
MBR2545CT

GER4001
GER4002
GER4003
GER4004
GER4005
GER4006
GER4007
GI1001
GI1002
GI1003

Index and Cross Reference
1-6

MBRP20045CT
MBRP20045CT
MBRP20045CT
MBRP20060CT
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
MUR120
MUR120
MUR120

Page
Number

GI1004
GI1101
GI1102
GI1103
GI1104
GI1301
GI1302
GI1303
GI1304
GI1401

5-6
5-6
5--£
5-6
5-6
5-6
5--£
4-90
4-90
4-90

MBRP20045CT
MBRP20045CT
MBRP20045CT
MBRP20060CT

Motorola
Similar
Replacement

5-3
5-3
5-3
5-3
5-3
5-3
5-3
5--£
5-6
5-6

FR254
FR255
FR301
FR302
FR303
FR304
FR305
FRM3205CC
FRM3210CC
FRM3215CC

MR856
MR856

Motorola
Nearest
Replacement

MUR120
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420
MUR420

1N5823
1N5824
1N5825
MR754
MR754
MR754
MR754
MR760
MR760
MR852
MR852
MR852
MR856
MR856
1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
MUR820
MUR820
MUR820
MUR840
MUR860
MUR120
MUR120
MUR120
MUR140
MUR140
MUR120
MUR120
MUR120
MUR140
MUR140

5--£
5-8
5-8
5-6
5-6
5"':6
5-6
5-6 •
5-2
5-2
5-2
5-2
5-2
5-2
5-2
4-5,6
4-56
4-56
4-56
4-56
4-23
4-23
4-23,
4-23
4-23
4-23
4-23
4-23
4-23
4-23

Rectifier Device Data

INDEX AND CROSS REFERENCE
Industry
Part Number

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

(continued)
Page
Number

Industry
Part Number

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

Page
Number

HER301
HER302
HER303
HER801
HER802
HER803
HER804
HER805
MBR10l00
MBR1035

MUR420
MUR420
MUR420
MUR820
MUR820
MUR820
MUR840
MUR840
MBR10100
MBR1045

4-31
4-31
4-31
4-56
4-56
4-56
4-56
4-56
3-90
3-86

MBR3045WT
MBR3100
MBR320
MBR330
MBR340
MBR350
MBR3520
MBR3535
MBR3545
MBR360

MBR3045WT
MBR3100
MBR340
MBR340
MBR340
MBR360
MBR3545
MBR3545
MBR3545
MBR360

3-127
3-57
3-53
3-53
3-53
3-53
3-148
3-148
3-148
3-53

MBR1045
MBR1060
MBR1070
MBR1080
MBR1090
MBRll00
MBR12035CT
MBR12045CT
MBR12050CT
MBR12060CT

MBR1045
MBR1060
MBR1100
MBRll00
MBRll00
MBRll00
MBRP20045CT
MBRP20045CT
MBRP20060CT
MBRP20060CT

3-86
3-90
3-46
3-46
3-46
3-46
3-182
3-182
3-182
3-182

MBR370
MBR380
MBR390
MBR4045PT
MBR4045WT
MBR5025L
MBR60035CTL
MBR6015L
MBR6020L
MBR6025L

MBR3100
MBR3100
MBR3100
MBR4045PT
MBR4045WT
MBR5025L
MBRP60035CTL
MBR6030L
MBR6030L
MBR6030L

3-57
3-57
3-57
3-121
3-131
3-125
3-184
3-160
3-160,
3-160

MBR150
MBR1535CT
MBR1545CT
MBR160
MBR1635
MBR1645
MBR170
MBR180
MBR190
MBR20015CTL

MBR160
MBR1545CT
MBR1545CT
MBR160
MBR1645
MBR1645
MBRll00
MBRll00
MBRll00
MBRP20030CTL

3-43
3-64
3-64
3-43
3-92
3-92
3-46
3-46
3-46
3-181

MBR6030L
MBR6035
MBR6045
MBR6045PT
MBR6045WT
MBR6535
MBR6545
MBR735
MBR745
MBR7535

MBR6030L
MBR6045
MBR6045
MBR6045PT
MBR6045WT
MBR6545
MBR6545
MBR745
MBR745
MBR7545

3-160
3-164
3-164
3-123
3-133
3-168
3-168
3-84
3-84
3-172

MBR20020CTL
MBR20025CTL
MBR20030CTL
MBR20035CT
MBR20045CT
MBR20050CT
MBR20060CT
MBR20100CT
MBR2015CTL
MBR20200CT

MBRP20030CTL
MBRP20030CTL
MBRP20030CTL
MBRP20045CT
MBRP20045CT
MBRP20060CT
MBRP20060CT
MBR20100CT
MBR2030CTL
MBR20200CT

3-181
3-181
3-181
3-182
3-182
3-182
3-182
3-73
3-66
3-75

MBR7545
MBR8035
MBR8045
MBRB1545CT
MBRB20100CT
MBRB2060CT
MBRB2515L
MBRB2535CTL
MBRB2545CT
MBRD320

MBR7545
MBR8045
MBR8045
MBRB1545CT
MBRB20100CT
MBRB2060CT
MBRB2515L
MBRB2535CTL
MBRB2545CT
MBRD340

3-172
3-174
3-174
3-24
3-28
3-26
3-32
3-34
3-36
3-15

MBR2030CTL
MBR2035CT
MBR2045CT
MBR2060CT
MBR2070CT
MBR2080CT
MBR2090CT
MBR2535CT
MBR2535CTL
MBR2545CT

MBR2030CTL
MBR2045CT
MBR2045CT
MBR2060CT
MBR20100CT
MBR20100CT
MBR20100CT
MBR2545CT
MBR2535CTL
MBR2545CT

3-66
3-69
3-69
3-73
3-73
3-73
3-73
3-80
3-78
3-80

MBRD330
MBRD340
MBRD350
MBRD360
MBRD620CT
MBRD630CT
MBRD640CT
MBRD650CT
MBRD660CT
MBRF2535CT

MBRD340
MBRD340
MBRD360
MBRD360
MBRD640CT
MBRD640CT
MBRD640CT
MBRD660CT
MBRD660CT
MBRF2545CT

MBR30035CT
MBR30045CT
MBR30050CT
MBR30060CT
MBR3020CT
MBR3035CT
MBR3035PT
MBR3035WT
MBR3045CT
MBR3045PT

MBRP30045CT
MBRP30045CT
MBRP30060CT
MBRP30060CT
MBR3045CT
MBR3045CT
MBR3045PT
MBR3045WT
MBR3045CT
MBR3045PT

3-183
3-183
3-183
3-183
3-178
3-178
3-119
3-127
3-178
3-119

MBRF2545CT
MBRSll00T3
MBRS130LT3
MBRS140T3
MBRS340T3
MR2500
MR2501
MR2502
MR2504
MR2506

MBRF2545CT
MBRSll00T3
MBRS130LT3
MBRS140T3
MBRS340T3
MR2504
MR2504
MR2504
MR2504
MR2510

Rectifier Device Data

3-15
3-15

3-15
3-15
3-10
3-10
3-10
3-'18
3-18
3-109
3-109,
3-11

3-7
3-9
3-13
5-12
5-12
5-12
5-12
5-12

Index and Cross Reference
1-7

•

I

INDEX AND CROSS REFERENCE

•

Industry
Part Number

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

(continued)
Page
Number

Industry
Part Number

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

Page
Number

MR2508
MR2510
MR2535L
MR4422CT
MR4422CTR
MR750
MR751
MR752
MR754
MR756

MR2510
MR2510
MR2535L
MR4422CT
MR4422CTR
MR754
MR754
MR754
MR754
MR760

5-12
5-12
5-19
5-18
5-18
5-8
5--13
5-8
5-8
5-8

MUR20040CT
MUR3005PT
MUR3010PT
MUR3015PT
MUR3020PT
MUR3020WT
MUR3030PT
MUR3040
MUR3040PT
MUR3040WT

MURP20040CT
MUR3020PT
MUR3020PT
MUR3020PT
MUR3020PT
MUR3020WT
MUR3040PT
MUR3040
MUR3040PT
MUR3040WT

4-116
4-90
4-90
4-90·
4-90
4-85
4-90
4-95
4-90
4-85

MR758
MR760
MR850
MR851
MR852
MR854
MR856
MUR10005CT
MUR10010CT
MUR10015CT

MR760
MR760
MR852
MR852
MR852
MR856
MR856
MURP20020CT
MURP20020CT
MURP20020CT

5--13
5-8
5--13
5-6
5-6
5--13
5-6
4-116
4-116
4-116

MUR3050PT
MUR3060PT
MUR3060WT
MUR405
MUR410
MUR4100E
MUR415
MUR420
MUR450
MUR460

MUR3060PT
MUR3060PT
MUR3060WT
MUR420
MUR420
MUR4100E
MUR420
MUR420
MUR460
MUR460

4-90
4-90
4-85
4-31
4-31
4-35
4-31
4-31
4-31
4-31

MUR10020CT
MUR10120E
MUR10150E
MUR105
MUR110
MUR1100E
MUR115
MUR120
MUR130
MUR140

MURP20020CT
MUR10120E
MUR10150E
MUR120
MUR120
MUR1100E
MUR120
MUR120
MUR140
MUR140

4-116
4--135
4-68
4-23
4-23
4-27
4-23
4-23
4-23
4-23

MUR470E
MUR480E
MUR490E
MUR5150E
MUR6020
MUR6030
MUR6040
MUR605CT
MUR61 OCT
MUR615CT

MUR4100E
MUR4100E
MUR4100E
MUR5150E
MUR6040
MUR6040
MUR6040
MUR620CT
MUR620CT
MUR620CT

4-35
4-35
4-35
4-54
4-98
4-98
4-98
4-39
4-39
4-39

MUR150
MUR1505
MUR1510
MUR1515
MUR1520
MUR1530
MUR1540
MUR1550
MUR1560
MUR160

MUR160
MUR1520
MUR1520
MUR1520
MUR1520
MUR1540
MUR1540
MUR1560
MUR1560
MUR160

4-23
4-71
4-71
4-71
4-71
4-71
,4-71
4-71
4-71
4-23

MUR620CT
MUR805
MUR810
MUR8100E
MUR815
MUR820
MUR830
MUR840
MUR850
MUR860

MUR620CT
MUR820
MUR820
MUR8100E
MUR820
MUR820
MUR840
MUR840
MUR860
MUR860

4-39
4-56
4-56
4-61
4-56
4-56
4-56
4-56
4-56
4-56

MUI,1605CT
MUR1605CTR
MUR1610CT
MUR1610CTR
MUR1615CT
MUR1615CTR
MUn1620CT
MUI11G20CTR
MUIl1G30CT
MUR1G40CT

MUR1620CT
MUR1620CTR
MUR1620CT
MUR1620CTR
MUR1620CT
MUR1620CTR
MUR1620CT
MUR1620CTR
MUR1640CT
MUR1640CT

4-46
4-51
4-46
4-51
4-46
4-51
4-46
4-51
4-46
4-46

MUR870E
MUR880E
MUR890E
MURD305
MURD310
MURD315
MURD320
MURD605CT
MURD610CT
MURD615CT

MUR8100E
MUR8100E
MUR8100E
MURD320
MURD320
MURD320
MURD320
MURD620CT
MURD620CT
MURD620CT

4-61
4--131
4-61
4-8
4-8
4-8

MUR1650CT
MUR1660CT
MUR170E
MUR180E
MUR190E
MUR20005CT
MUR20010CT
MUR20015CT
MUR20020CT
MUR20030CT

MUR1660CT
MUR1660CT
MUR1100E
MUR1100E
MUR1100E
MURP20020CT
MURP20020CT
MURP20020CT
MURP20020CT
MURP20040CT

4-46
4-46
4-27
4-27
4-27
4-116
4-116
4-116
4-116
4-116

MURD620CT
MURH840CT
MURH860CT
MURHS840CT
MURS120T3
MURS160T3
MURS320T3
MURS360T3
P600A
P600S

MURD620CT
MURH840CT
MURH860CT
MURHS840CT
MURS120T3
MURS160T3
MURS320T3
MURS360T3

4-11
4-11
4-11
4-14
4-2
4-2
4-5
4-5

Index and Cross Reference

1-8

4-9
4-11
4-11
4-11

MR754
MR754

5--B
5-8

Rectifier Device Data

INDEX AND CROSS REFERENCE
Industry
Part Number

P600D
P600G
P600J
P600K
R710XPT
R711
R711A
R711X
R711XPT
R712X

Motorola
Nearest
Replacement

Motorola
Similar
Replacement

MR754
MR754
MR760
MR760
MUR3020WT

(continued)
Page
Number

Industry
Part Number

Motorola
Nearest
Replacement

5-8
5-8
5-8
5-8
4-85
5-18
5-18
4-85
4-85
4-85

RGP20J
RGP25A
RGP25B
RGP25D
RGP25G
RGP25J
RGP30A
RGP30B
RGP30D
RGP30G

4-85
4-85
4-85
5-12
5-12
5-12
5-12
5-12
5-12
5-12

RGP30J
RGP80A
RGP80B
RGP80D
RGP80G
RGP80J
RL061
RL062
RL063
RL064

1N4933
1N4934
1N4935
1N4936
1N4937
MR852
MR852
MR852

5-12
5-12
5-3
5-3
5-3
5-3
5-3
5-+I-t...,..

o+f--I1-'

3'

3. ANODE
4. CATHODE

PIN 1. ANODE 1
SffiE2:
2. CATHODES

a.

ANODE 2
4. CATHODES
(BACK HEATSINK)

'2

,
3

4

3

3

Table 14. TO-218 Types and TO-247 Ultrafast Rectifiers
Maxlrr
(ns)

MaxVF@IF
TC=25oC
(Valls)

IFSM
(Amperes)

TJ Max
(OC)

Case

Page

MUR3020WT

35

1.05@15A

150

175

340F

4-85

TC= 145°C

MUR3040WT

60

1.25@15A

150

175

340F

4-85

30

TC= 145°C

MUR3060WT

60

1.70@15A

150

175

340F

4-85

200

30

TC = 150°C

MUR3020PT

35

1.12@15A

200

175

3400

4-90

400

30

TC = 150°C

MUR3040PT

60

1.12@ 15A

150

175

3400

4-90

600

30

TC= 145°C

MUR3060PT

60

1.20@ 15A

150

175

3400

4-90

400

30

TC = 70°C

MUR3040*

100

1.5@30A

300

175

340E

4-95

BOO

30

TC = 70°C

MUR30BO*

110

1.90 @ 30A

300

175

340E

4-97

400

60

TC=70°C

MUR6040

100

1.50@60A

600

175

340E

4-98

VRRM
(Volls)

10
(Amperes)

10 Rallng
Condition

200

30

TC = 145°C

400

30

600

Device

* New Product

•

SOT-227B

Case 357C
POWERTAP'"

1· 2· •

=

Cathode Mounting Plate
Anode = Terminal

•

1 0--14-02

1 0--14-0 4

4 0--14-03

2 o--tI--O 3

STYLE 2

STYLE 3

Table 15. POWERTAP II and SOT-227B Ultrafast Rectifiers
VRRM
(Volts)

10(1)
(Amperes)

10 Rating
Condition

400

60

TC = 60°C

1000

60

TC = 50°C

400

120

TC = 80°C

Device

Maxi"
(ns)

MaxVF@iF
TC = 25°C
(Volts)

IFSM
(Amperes)

TJ Max
(OC)

Case

Page

BYT230PIV-400M*

'00

1.5 @30A

200

150

SOT·227B
Style 3

4-100

BYT230PIV-1000M*

165

1.9 @ 30 A

200

150

SOT·227B
Style 3

4-104

BYT261PIV-400M*

100

1.5@60A

600

150

SOT·227B
Style 2

4-108

BYT261PIV·1000M*

170

1.9 @ 60A

400

150

SOT·227B
Style 2

4-112

~

~

~

1000

120

TC = 60°C

200

200

TC = 130°C

MURP20020CT*

50

1.00 @ 100A

800

175

357C

4-116

400

200

TC = 100°C

MURP20040CT *

50

1.30 @ 100A

BOO

175

357C

4-116

..

~

(1) 10 IS total deVice current capability.
All POWERTAP devices are being converted to the new, more rugged, POWERTAP II configuration beginning January 1994. Contact your Motorola representative
for more details.
All SOT-2278 devices have 2500 volts isolation between the heatsink and active elements.
~

Indicates UL Recognized -

* New Product

File #E69369

Devices listed in bold, italic are Motorola preferred devices.

Rectifier Device Data

Selector Guide

2-13

Fast Recovery Rectifiers/General-Purpose Rectifiers
Axial lead Fast Recovery Rectifiers having maximum switching times of 200 ns and low cost general purpose rectifiers are listed
in the table below.

casel~~~j

Case 194--04

Case 267--{)3

"i

7

Cathode = Polarity Band

!

Cathode = Polarity Band

Case 193--{)4
Plastid10)

Cathode indicated by
diode symbol

Case 221B
(TO-220AC)

o

Cathode = Polarity Band
Case 1--{)7
(T0-204AA)
Metal

STYlE':
PIN 1. CATi

o
o

/'

a:

~

~

en

/

/'
/
TJ= 1OO°
0

w

\

1f
c(

0

en
a:
w

.......... ........

50

TJ = +25°C

10

!z
w

\

w
0
z
;::!: 100

G:i

II:

!f

10
15
20
VR. REVERSE VOLTAGE (VOLTS)

25°C

!

0.1

0.01 0

25

~ 0.875

:5-

§ 0.625 _ ::~ =
a:

It

= SQUARE

0.5

~ 0.375

-

o

60

74

0.315 -

'i'..

o

II:

- -

81
88
95 102 109
LEAD TEMPERATURE (0C)

0.245
0.21

w

0.14

~

0.105

:iC

0.07

w

25

I
I
TJ=125°C
I
I

IpK
. 1_5
= 20 10/
IAV
'",

I

I

SQUARE
I'
WAVE _ DC
It

/

/.

./

V'

I
f // 1,/
/1 fA ./
/ / '#'/

h ~ ;'
P"
0 .Ji'

~ 0.035

~~

116 123

Figure 5. Current Derating (Lead)

Rectifier Device Data

0.28

~ 0.175

"
~ ~"\

r- ~ ~

20
67

WAV~

.......

10

~ 0.25
w
:iC 0.125

0.35

~

18~
~

5

w

~

~

DC

~ 0.75

10
15
20
VR. REVERSE VOLTAGE (VOLTS)

Figure 4. Typical Reverse Current

Figure 3. Typical Capacitance

~

75°C

10
15
20
VR. REVERSE VOLTAGE (VOLTS)

200

o

-

I

Figure 1. Typical Forward Voltage

<:i

_I-"-"

...-

0:

I

/

VF. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

rL

-

II:

;::!:
;::!:

z

~

:::>

V

TJ = 100°C

a:
a:

/

0.1

§z
g

!z
w

/

Do

130

o

0.125 0.25 0.375
0.5
0.625 0.75 0.875
IF(AY). AVERAGE FORWARD CURRENT (AMP)

Figure 6. Power Dissipation

3-3

•

I

MOTOROLA
SEMICONDUCTOR TECHNICAL pATA

MBR0530T1
MBR0530T3

Surface Mount
Schottky Power Rectifier

Motorola Preferred Devices

Plastic SOO-123 Package
· .. using the Schottky Barrier principle with a large area metal-to-sllicon power
diode. Ideally suited for low voltage, high frequency rectification or as free
wheeling and polarity protection diodes in surface mount applications where
compact size and weight are critical to the system. This package also provides
an easy to work with alternative to lead less 34 package style. These
state-of-the-art devices have the following features:

SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES
30 VOLTS

• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
•
•

Epoxy Meets UL94, VO at I/S"
Package Designed for Optimal Automated Board Assembly

Mechanical Characteristics
• Reel Options: MBR0530Tl
MBR0530T3

=3,000 per 7" reellS mm tape
=10,000 per 13" reellS mm tape

CASE 425-04
SOo-123

• Device Marking: B3
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
•

Lead and Mounting Surface Temperature for SolQering Purposes: 260°C Max. for 10 Seconds,

MAXIMUM RATINGS
Rating

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR) TL

=100'C

Symbol

Value

Unit

VRRM
VRWM
VR

30

Volts

IF(AV)

0.5

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase. 60 Hz)

IFSM

5.5

Amps

Storage Temperature

Tstg

-65 to +125

°c

TJ

-65 to +125

'c

dv/dt

1000

VlJlS

Operating Junction Temperature
Voltage Rate of Change (Rated VR)

THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Ambient (1)

340

Thermal Resistance - Junction to Lead (1)

150

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (2)
(iF 0.1 Amps, TJ 25°C)
(iF 0.5 Amps, TJ 25'C)

VF

Maximum Instantaneous Reverse Current (2)
(Rated dc Voltage, TC 25°C)
(VR = 15 V, TC 25'C)

IR

=
=

=
=

=
=

Volts
0.375
0.43

=

..

JlA
130
20

(1) FR-4 or FR-5 3.5 x 1.5 Inches uSing the Motorola minimum recommended footpnnt.
(2) Pulse Test: Pulse Width = 300 JlS, Duty Cycle,; 2%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev!

3-4

Rectifier Device Data

MBR0530T1, MBR0530T3

104

TJ = 125"C

11000

tz
w

TJ = 125"G7'" 75"C L-t25"C-

/

/

i------I-4O"C

/

a:
a:

5

-

100

-

75"C

w

en
a:

/

~a:

10

ci:
25"C
0.2

0.25

0.3

0.35

0.4

0.45

0.5

10

0.55

15

20

25

30

35

VF. INSTANTANEOUS VOLTAGE (VOLTS)

VR. REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

Figure 2. Typical Reverse Current"

180
160 ~

oS

w

()

120

z

100

it

80

(§

c5

CA~ACITANC~ AT 0 V = 1~O pF

140

;:s

U

JPICAL

40

\

,

\

60
40

I'-15

10

20

25

30

VR. REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

i=

c
'"~
'"a"-

.....

;:;:; TJ = 100°C

'"~

II

~

.of

10

u

/25°C

...........

4

~ 8r---~~----'----r---r---.---'---.
;:
TJ = 100°C

RAT~D VOLT1GE APJUED

_

R8JC = 12°C/W
TJ = 100°C

-

'"

Z
~

gj

I

a

'"~

SQUARE""- ~DC

w

(!)

WAVE

~

w
~

!

"-

60

70

"

7~--4---~---+--~----+---~~~--~

Q

~

4

w

~

[\.

~

80
90
100
110
TC. CASE TEMPERATURE (OC)

w
~

~

120

~1r---~~~~~--~----t---4----r--~

~ O~--~--~--~--~--~--~--~--~
o
2
4
7

130

IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 3. Current Derating (Case)

Figure 4. Typical Power Dissipation

400

CA~ACITANhE

N6TE: TYPiCAL
ATOV=290pF

350

u:-

__

300

S

w
u 250
z
~
U 200

ct
«

u 150
c5
100

50

\

\

\.

"'-....
12

16

20

24

28

32

VR. REVERSE VOLTAGE (VOLTSI

Figure 5. Typical Capacitance

3-8

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

Surface Mount
Schottky Power Rectifier

MBRS140T3
Motorola Preferred Device

· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling
and polarity protection diodes in surface mount applications where compact size and weight are
critical to the system.
•
•
•
•
•
•

Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25 c C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection

SCHOTTKY BARRIER
RECTIFIERS
1,0 AMPERE
40 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All Extemal Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260c C Max. for
10 Seconds
• Shipped in 12 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Marking: B140

CASE 403A-II3

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

VRRM
VRWM
VR

40

Volts

IF(AV)

1

Amps

IFSM

40

Amps

TJ

-65 to +125

'c

Maximum Instantaneous Forward Voltage (1)
(iF= 1.0A, TJ = 25'C)

vF

0.6

Volts

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage, T J = 25'C)
(Rated de Voltage, T J = 100'C)

iR

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)
Operating Junction Temperature

TL= 115c C

THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Lead
(TL= 25'C)

ELECTRICAL CHARACTERISTICS

mA
1.0
10

(1) Pulse Test: Pulse W,dth = 300!'S. Duty Cycle ~ 2.0%.

Rev 2

Rectifier Device Data

3-9

MBRS140T3

,----- - -

1-

1

~ 0.7

Te = 1000 e

~

~ 0.5

~

0.2

@

~

0.1

~ 0.07

.!f. O.OS

0.03

2SoC

o

~

~

7SoC

~ ~:

I

12SoC
100°C

Ia

I I
I

~ 0.3

TJ

S
3
2
1
S
3
~ o. 2
'" O. 1
- 0.0S
0.03
0.0 2
0.0 1

I

I I

'"=:>

I

1

100
0
0
0
0

12
16
20
24
28
VR, REVERSE VOLTAGE (VOLTSI

H- I ,

32

36

Te = 25°e

Figure 2, Typical Reverse Current

I

I

II I

0.02
0.1

0.2

0.3
0.4
O.S
0.6
0.7
0.8
0.9
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTSI

1.1

Figure 1, Typical Forward Voltage
200
180
NOTE TYPICAL CAPACITANCE AT
oV = 160 pF

160
~ 140
~

z

120

t!' 10o \
~
<3 o \
u

0

:--.......

40

t---

0
0

12
16
20
24
28
VR, REVERSE VOLTAGE (VOLTSI

32

36

40

Figure 3, Typical Capacitance
10

AP~UED

DC

RATEb VOLThGE
RHJC = 12'CW
TJ = 12S"C

TJ

= 125"C

SQUAREWAVV

~V

-....... r---..,- r--..

r----.. ~C

SOUARE WAVE
1

o

W

~

60

~

-.....::::: ~

60
N
60
00
100
TC, CASE TEMPERATURE rCI

Figure 4, Current Derating (Case)

3-10

1W

""""1W~

V

/

Sh

.b V
CAPACITANCE LOAD 10/ ~ V
-!fK
= 20/. W / '
IAVA~ V
~V

/

/

.~

1W

1
3
4
IF(AVI, AVERAGE FORWARD CURRENT (AMPSI

Figure 5. Power Dissipation

Rectifier Device Data

40

MOTOROLA

SEMICONDUCTOR-_ _ _ _ _ _ _ _ _ _ __
TECHNICAL DATA

Designer'sTM Data Sheet
Schottky Power Rectifier

MBRS1100T3
Motorola Preferred Device

Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification,
or as free wheeling and polarity protection diodes, in surface mount applications where compact
size and weight are critical to the system. These state-of-the-art devices have the following
features:
•
•
•
•
•
•

Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage - 100 Volts
150°C Operating Junction Temperature
Guardring for Stress Protection

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Marking: B110

SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS

•

CASE 403A-03

MAXIMUM RATINGS
Rating
Peak Repelitive Reverse Vollage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Aectified Forward Current

TL
TL

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)
Operating Junction Temperature

='120°C
=100°C

Symbol

Value

Unit

VRAM
VRWM
VR

100

Valls

IF(AV)

1.0
2.0

Amps

IFSM

50

Amps

TJ

-65 to +150

°C

dv/dt

10

Vlns

Maximum Instantaneous Forward Voltage (1)
(iF 1.0 A, T J 25'C)

vF

0.75

Valls

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage, TJ 25'C)
(Aated de Voltage, TJ 100'C)

iA

Voltage Aale of Change

THERMAL CHARACTERISTICS
Thermal Resistance (TL 25°C)

=

Junction to Lead

ELECTRICAL CHARACTERISTICS

=

=

=
=

(1) Pulse Test: Pulse Width = 300 J!S. Duty Cycle

mA
0.5
5.0

~2%

Preferred devices are Motorola recommended choices for future use and best overall value.
Designer's Data for "Worst Case" Conditions -

The Designer's Data Sheet permita the design of most circuits entirely from the information presented. Limit curves - representing boundaries on

device characteristics - are given to facilitate "Worst case" design.

Rev 2

Rectifier Device Data

3-11

MBRS1100T3

TYPICAL ELECTRICAL CHARACTERISTICS

I

I

E

==

400
200
~ 100 ~ TJ=150"C
f - - - 125"C_

TJ = 150"C

I
a
!

V

c

I-- ' - - l000C

~

12

L J.

0.5

25"C

!;g

In·

I

0.2

~

I

I

~

~~10

w

2

~

a:

0.1

~

0.05

1!!l
u:

0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Vj;

1

1==

4
1
0.4
0.2
O. 1
0.04
0.02
0.0 1

o

1.1 1.2 1.3 1.4

=

10

INSTANTANEOUS VOLTAGE (VOLTS)

~

2.4

~

i

2.0

w

1.2

~~

0.8

~

// /

SQUARE
WAV/

1.6

0.4

5.

~

0

o

:

""

0.5

./: /

%;;

4,0
3.5

~

~
~

'?'

1.0

-

W

40

W

2.0

2.5

ro

60

60

60

3.0

3.0

3.5

SQUAR;-"
WAVE

1.5
1.0

iF

4.0

0

~

........... ,DC

2.5

"

~

~

"" "

'\ ~

40

20

0

60

60

100

120

IF(AV). AVERAGE FORWARD CURRENT (AMPS)

TL LEAD TEMPERATURE ("C)

Figure 3. Power Dissipation

Figure 4. Current Derating, Lead

280

,

260
240
220

I'

140

'''''''' " "

NOTE: TYPICAL CAPACITANCE
ATOV=270pF

I'..

u:200

.. s.
~

~

~

~
c5

180
160
140
120
100

"

60
60
40

I'

20

o0.1

0.2

0.5

1

2

5

10

20

50

100

YR. REVERSE VOLTAGE (VOLTS)

Figure 5. Typical Capacitance

3-12

~

RATED VR APPUED
RWL = 22"C{W
TJ = lOO"C

~ 0.5

1.5

...-

r--

@
~ 2.0

.........: :/'"
~

~

!

I

1'/

TJ = lOO"C

~

r--

loo"C

20

I----

r--

Figure 2. Typical Reverse Current

3.2

~ 2.8

-

VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

g

-

lK

20
10

Rectifier Device Data

160

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MBRS340T3
MBRS360T3

Surface Mount
Schottky Power Rectifier

Motorola Preferred Device

· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling
and polarity protection diodes, in surface mount applications where compact size and weight are
critical to the system.
•
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
40, 60 VOLTS

Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.5 Volts Max @ 3.0 A, TJ = 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection

•

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 217 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for
10 Seconds
• Shipped in 16 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode lead
• Marking: B34, B36

CASE 403-03

MAXIMUM RATINGS
Symbol

MBRS340T3

MBRS360T3

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

40

60

Volts

Average Rectified Forward Current

IF(AV)

3.0 @ TL = 100°C
4.0 @ TL 90°C

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

80

Amps

TJ

-65 to +125

°C

Rating

Operating Junction Temperature

=

THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Lead

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 3.0 A, T J = 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage, T J = 25°C)
(Rated de Voltage, TJ = 100°C)

IR

Volts
0.525

0.740

2.0
20

0.5
20

rnA

(1) Pulse Test: Pulse Width = 300 ~s, Duty C~cle $ 2.0%.

Rev 2

Rectifier Device Data

3-13

MBRS340T3, MBRS360T3

31--

TC~l~OC

2

\

1

'I

100
50

I(

20 TJ

1

Yi

~

2
1 I=;:=: ~75'C
~ 0. 5
~ o. 2
~ 0. 1
- 0.05~ 25'C

a

TC=25°C

5

2

51=== 100'C

g§

7

3

125'C

0

0.02
0.0 1

I

o

12
16
20
24
28
VR, REVERSE VOLTAGE IVOLTSI

I

32

36

40

36

40

Figure 2. Typical Reverse Current

o.1
0.07
0.05
o 0.1

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
vF, INSTANTANEOUS VOLTAGE IVOLTSj

1.2 1.3 1.4

Figure 1. Typical Forward Voltage

/

5

TJ = ioooc

-

I

V

10
ICAPACITIVE LOADI

~

IAV

- 20

/

/ /

i0"

/ ' ../ I-'"

/

./

/" ./

./.~ / '

1

y

/

/saUARE

/' . /W~
DC
/'

V

~ ::-?V

1~

1
4
IFIAVj, AVERAGE FORWARD CURRENT IAMPSI

Figu,re 3. Power Dissipation
500

-

........

RATEb VOLTiGE A~PLlED
ROJC = 10.5'CW
TJ = 125'C

WAVE

40

50

60

= 25'C

\

""'""'- I\.

100

70
80
90
100 110
TC, CASE TEMPERATURE I'CI

120

Figure 4. Current Derating (Case)

3-14

TJ

\

1'--.""1\

1

o

400

"- ~C

""'SQUA~

TYPICAL CAPACITANCE AT 0 V = 480 pF

130

140

o
o

........ r12

16

20

24

28

32

VR, REVERSE VOLTAGE IVOLTSI

Figure 5. Typical Capacitance

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MBRD320
MBRD330
MBRD340
MBRD350
MBRD360

SWITCHMODE Power Rectifiers
DPAK Surface Mount Package
· .. designed for use as output rectifiers, free wheeling, protection and steering diodes in
switching power supplies, inverters and other inductive switching circuits. These
state-of-the-art devices have the following features:
• Extremely Fast Switching
• Extremely Low Forward Drop
• Platinum 8arrier with Avalanche Guardrings
• Guaranteed Reverse Avalanche
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10
Seconds
• Shipped 75 units per plastic tube
• Available in 16 mm Tape and Reel, 2500 units per reel, by adding a ''T4" suffix to the part
number
• Marking: 8320, 8330, 8340, 8350. 8360

MBRD320, MBRD340 and MBRD36D are
Motorola Preferred Devices

SCHOTIKY BARRIER
RECTIFIERS
3 AMPERES
20 TO 60 VOLTS

:"':J-"--".~I---' 4

CASE 369A·13
PLASTIC

MAXIMUM RATINGS
Rating

Symbol

MBRD

Unit

320

330

340

350

360

20

30

40

50

60

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

Average Rectified Forward Current ITC = + I 25'C, Rated VR)

IF(AV)

3

Amps

Peak Repetitive Forward Current, T C = + I 25'C
(Rated VR, Square Wave, 20 kHz)

IFRM

6

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

75

Amps

Peak Repetitive Reverse Surge Current (2 p.s, I kHz)

IRRM

I

Amp

TJ

-65to +150

Storage Temperature

Tstg

-65 to +175

'c
'c

Voltage Rate of Change (Rated VR)

dvldt

10000

V/p.s

Operating Junction Temperature

Volts

THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case

6

Maximum Thermal Resistance, Junction to Ambient (I)

80

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (2)
iF = 3 Amps, TC = +25'C
iF = 3 Amps, TC = +125'C
iF = 6 Amps, TC = +25'C
iF = 6 Amps, TC = + I 25'C

vF

Maximum Instantaneous Reverse Current (21
(Rated de Voltage, TC = + 25'CI
(Rated de Voltage, T C = + I 25'CI

iR

Volts
0.6
0.45
0.7
0.625
mA
0.2
20

(1) Rating applies when surface mounted on the minimum pad size recommended.
(2) Pulse Test: Pulse Width = 300 p.o, Duty Cycle" 2%.

Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 1

Rectifier Device Data

3-15

MBRD320, MBRD330, MBRD340, MBRD350, MBRD360

TYPICAL CHARACTERISTICS

--

100

100

40
20
10
4

~
~

a:

~

~
~

I'7Z

ltC,:- ~ If 'TJ = 25"C

2~"C -P

0.02

20
30
40
50
VR. REVERSE VOLTAGE (VOLTSI··

10

0

SINE

9

....... 75"C

TJ

B

WA~

= 150"C

6

I I I

II

3
2

U

~

U

U

U

U

U

U

U

1.1

Figure 1. Typical Forward Voltage

Figure 3. Average Power Dissipation

WAVE
OR
SQUARE
WAVE

FlATED VdLTAGE A~PLlED

le

= 6"CNV
= 150"C

~
a:

~ 3. 5

100

110

'"

TJ

~

\

120

,\de

~~

\

~

1\ \
'\140 150
130

TC. CASE TEMPERATURE I"CI

Figure 4. Current Derating. Case

3-16

TJ

T

"""

2.5
2 TJ

5
w 1.
~

1

160

0

...........

........

= 125"C

----f-- r... ...
=
r..,
_

TJ

---de

',,-.......

,

150"C ...

" " r, ,
" "

~ O. 5
§

. R6JA = BO"CNV
SURFACE MOUNTED ON MIN.PAD SIZE RECOMMENDED

= 150"C

a:

ac

\

1

90

10

234567
B
IFIAVI. AVERAGE FORWARD CURRENT IAMPSI

SIN~

0
80

~~ V

~~~

vF.INSTANTANEOUS VOLTAGE IVOLTSI

RflJC

~

/
/ / / #
... V
/ #
J r/. Vd ~......... "'"

4

I

= 20

Ipl(IlAV

5

I I I

o. 1

70

1/ 5 / :..<
,/
/10
'/'
/
V / / de /SQUARE
WAVE-

7

I

60

Figure 2. Typical Reverse Current

'II /

1

75"C

*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be
estimated from the~e curves if VR is sufficient below rated VR.

f//v

h

100"C

1
0.4
0.2
O. 1

0.004
0.002
0.00 10

// V/

125"C--Jj

2

.5 0.0 1

// '/

150"C
125"C

~ 0.04

a:

~~

0

TJ

20

40

60

80

- - SQUARE WAVEOR
SINE WAVE
VR = 25 V

-

"

.........

100

"

120

I\.

140

TA. AMBIENT TEMPERATURE I"CI

Figure 5. Current Derating. Ambient

Rectifier Device Data

160

MBRD320, MBRD330, MBRD340, MBRD350, MBRD360

1K
700

500

;;:30o

~
200
u

::i

'\
I'..

r--...

-

TJ = 25°C

I-

100
70
~ 50
!:::

~

30
20

•

10

o

10

20
30
40
50
VR. REVERSE VOLTAGE IVOLTS)

60

70

Figure 6. Typical Capacitance

Rectifier Device Data

3-17

I

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

SWITCH MODE Power Rectifiers

MBRD620CT
MBRD630CT
MBRD640CT
MBRD650CT
MBRD660CT

DPAK Surface Mount Package
· .. in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art
devices have the following features:

•

• Extremely Fast Switching
• Extremely Low Forward Drop
• Platinum Barrier with Avalanche Guardrings
• Guaranteed Reverse Avalanche
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10
Seconds
• Shipped 75 units per plastic tube
• Available in 16 mm Tape and Reel, 2500 units per reel, by adding a "T4" suffix to the part
number
• Marking: B620T, B630T, B640T, B650T, B660T

MBRD620CT, MBRD640CT and MBRD660CT are

Motorola Preferred Devices

SCHOTTKY BARRIER
RECTIFIERS
6 AMPERES
20 TO 60 VOLTS

CASE 369A-13
PLASTIC

MAXIMUM RATINGS
MBRD
Rating

Svmbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

Average Rectified Forward Current
TC = 130'C (Rated VR)

Per Diode
Per Device

620CT 630CT 640CT 650CT &&OCT
20

30

40

50

60

Unit
Volts

IF(AV)

3
6

Amps

Peak Repetitive Forward Current, TC = 130'C
(Rated VR, Square Wave, 20 kHz) Per Diode

IFRM

6

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, SO Hz)

IFSM

75

Amps

Peak Repetitive Reverse Surge Current (2 /Ls, 1 kHz)

IRRM

1

Amp

TJ

-S5 to +150

Tstg
dvldt

-S5 to +175

'c
'c

10000

V//Ls

Operating Junction Temperature
Storage Temperature
Voltage Rate of Change (Rated VR)

THERMAL CHARACTERISTICS PER DIODE
Maximum Thermal Resistance, Junction to Case

6

Maximum Thermal Resistance, Junction to Ambient (1)

80

ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage (2)
iF = 3 Amps, TC = 25'C
IF = 3 Amps, TC = 125'C
iF = 6 Amps, TC = 25'C
iF = 6 Amps, TC = 125'C

vF

Maximum Instantaneous Reverse Current (2)
(Rated dc Voltage, TC = 25'C)
(Rated dc Voltage, TC = 125'C)

iR

Volts
0.7
0.S5
0.9
0.85

..

mA
0.1
15

'11 Rating applies when surface mounted on the minimum pad Size recommended .
(21 Pul•• Test: Pulse Width = 300 /LB. Duty Cycl. '" 2%.

Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 1

3-18

Rectifier Device Data

MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
TYPICAL CHARACTERISTICS
100

100

150'C

TJ

0

]"

10

~

1

0

....
z

0

l}l

=>

u

125'C

75'C

a:

~

0

~

O. 1

$

~

asa:

~

10

a:
=>
u
c
a:

",- " .

0.01
0.001

o

A"//
~A

~
f2

a:

i#. ~

A~

!
0.7
0.5

12rC["'jo,
150'C ..... J

II/

0.3

o

13
12
zl1
o
!;i 10 r--IPKflAV
~ 9

,
I
,~

5

= 25'C

a:

~
w

l

i'-75 C

J

0.2

0.1

S
~

/I'--TC

I
I

.F
0.4
0.6
O.B
1
1.2
vF. INSTANTANEOUS VOLTAGE (VOLTSI

/

/

I

/

/

/

1.4

WAVE
OR
SQUARE
WAlE

1

o

BO

90

100

Figure 4. Current Derating. Case. Per Leg

Rectifier Device Data

~

asa:

~

a:

ac 2.5
~
~

160

I

TJ = 150'C

~ 3.5

f2
w 1.5

[\.\

110
120
130
TC. CASE TEMPERATURE ('CI

TJ

= 150'C10

4
5
6
IF(AVI. AVERAGE FORWARD CURRENT (AMPSI

~

\.de

'\ \.
'\.\150
140

-
'"

25'C

,....

Fo--r-.. . VR = 25 V

VR =

1°·5o

o

~O V

20

-

40

--

............

r--.....

II

R9JA = BO'Crw
SURFACE MOUNTED ON
MINIMUM PAD SIZE
RECOMMENDED

,

de

- - - - SQUARE WAVE
OR
......
SINE WAVE

r-. ........

r--....

.... ,

.....
.... r-. ....

....

60
80
100
120
TA. AMBIENT TEMPERATURE ('CI

"\

\

140

Figure 5. Current Derating. Ambient. Per Leg

3-19

160

MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT

1K

'\.

"-

10

o

t'--..

10

TJ = 25'C

20
30
40
50
VR. REVERSE VOLTAGE (VOLTS)

60

80

Figure 6. Typical Capacitance, Per Leg

3-20

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

SWITCHMODETM Power Rectifier

MBRD835L

DPAK Surface Mount Package

Motorola Preferred Device

This SWITCH MODE power rectifier which uses the Schottky Barrier principle
with a proprietary barrier metal, is designed for use as output rectifiers, free
wheeling, protection and steering diodes in switching power supplies, inverters
and other inductive switching circuits. This state of the art device has the following
features:
•
•

Low Forward Voltage
125°C Operating Junction Temperature

•
•

Epoxy Meets UL94, VO at 1/8"
Guaranteed Reverse Avalanche

•
•

Compact Size
Lead Formed for Surface Mount

SCHOTTKY BARRIER
RECTIFIER
8 AMPERES
35 VOLTS

•

Mechanical Characteristics
•
•
•

Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable

•

Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max.
for 10 Seconds

•
•

Shipped 75 units per plastic tube
Available in 16 mm Tape and Reel, 2500 units per 13" reel, by adding a ''T4''
suffix to the part number

•

Marking: B835L

CASE 369A-13
DPAK PLASTIC, STYLE 3

MAXIMUM RATINGS
Symbol

Value

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

35

Volts

Average Rectified Forward Current
(At Rated VR) TC = +88°C

IF(AV)

8

Amps

Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz) T C = + 80°C

'FRM

16

Amps

Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, Single phase, 60 Hz)

IFSM

75

Amps

Repetitive Avalanche Current
(Current Decaying Linearly to Zero in t !ls, Frequency Limited by TJmax)

IAR

2

Amps

Storage Temperature

Tstg

-65 to +150

°C

TJ

-65 to +125

°C

dv/dt

10,000

V/IlS

Rating

Operating Junction Temperature
Voltage Rate of Change (Rated VR) .
THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Case

6

Thermal Resistance - Junction to Ambient(l)

80

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage(2)

(iF = 8 Amps, TC = +25°C)
(iF=8Amps, TC=+125°C)

VF

0.51
0.41

Volts

Maximum Instantaneous Reverse Current(2)

(Rated dc Voltage, TC = +25°C)
(Rated dc Voltage, TC = +100°C)

IR

1.4
35

rnA

..

(1) Rating applies when surface mounted on the minimum pad sIZe recommended.
(2) Pulse Test: Pulse Width = 300 !ls, Duty Cycle,;; 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev!

Rectifier Device Data

3-21

I

MBRD835L

TYPICAL CHARACTERISTICS
fi)

<"

.§.

....z

P-

10

w

a:
a:

~ 10

a:

:::>

5o

()

0

a:

25"C

TJ = 125"C

~
a:

TJ = 125"C

a:

~
a:

0

it

U-

rn

:::>
0

•

!

w

z~

§ 0.1

0.1

75"C

ij

Z

~

~

z

~

~

25"C
J LL

~

rn

.!f 001
.

a

0.1

0.2
0.3
0.4
0.5
vf; INSTANTANEOUS VOLTAGE (VOLTS)

0.6

III

:!f. 0.01 0

0.1

Figure 1. Maximum Forward Voltage

TJ=125"C

<"

.§.

!Z
w

.§.

10

a:
a:

0.6

Figure 2. Typical Forward Voltage

1000

<" 100

0.2
0.3
0.4
0.5
Vf; INSTANTANEOUS VOLTAGE (VOLTS)

....
z
w

100"C

a:
a:

:::>

100~i~illiil~llililil;llil~lli;1
TJ = 125"C

10

100"C

:::>

()

()

w
a:
w
>
w
a:

w

rn

rn
.a:
w
>
w
a:

25°C

0.1

Ii:

IIII

Ii: 0 . 1 - ,_ _ _

Mf

0.01
0.001 0

75"C

15
10
20
25
VF, REVERSE VOLTAGE (VOLTS)

30

35

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Maximum Reverse Current

~

1000

25"C

IIII
0.Q1 ~O~~~5EJ":10~W-:J15~a~20Fi~2~5.J.E.El:3!:<0""~35'

TJ = 25"C

Figure 4. Typical Reverse Current

---'TYPICAL
---MAXIMUM

~
""'=== ::::.~

100

10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Maximum and Typical Capacitance

3-22

Rectifier Device Data

MBRD835L

TYPICAL CHARACTERISTICS
~

16 r----.---.--,-----,----,-,---r----.---,-----,
1
TJ •
I
I

~ 14.4
~

125°~

.... ~eiil

12.8

ReJt=60~IW-

I

~ 11.2.~ ......... ~ 7t(R~ISTIVELOAD)

~

~

~

~

~.

9.6
8

SQUA~E WAVE

-....s..: t- .L

6.4

""

I

IPK = 5 (CAPACITIVE

f"'..

IAV

LOAD)

"

4.8/--.

10

~~."

•

! 3.2F~f~~~~f::F~:~~§~=~
~o
r--~~ ~~

1.6

:"III..

080

85

90

95 100 105 110 115
TC. CASE TEMPERATURE (OC)

1rai25

130
TA. AMBIENTTEMPERATURE (OC)

Figure 7. Current Derating

Figure 6. Current Derating, Infinite Heatslnk

I
I13

TJ = 125°C

I

IPK

I

(CAPACITIVE

IAV = 5

c
a:

\

LOAD\

I

SQUARE WAVE /

>/

de

V

)/J V
/ //. V /
10)

~
a:

20

12
w

I V.I.: ,~"/ , /

~ 1.5\;;;;;;±-+-+-

~~ 0.51-t--+-r-+r:~~::~~~~~f:=F~~~~~~
O!:--t:--+.,..--;:'::-+.--:!:-:::-=-+.-:t:-:-:!::--±:~~
g-

~ (RESiSTIVE1LOAD)1

o

10

20 30 40 50 60 70 80 90 100 110 120 130
TA. AMBIENT TEMPERATURE (OC)

Figure 8. Current Derating, Free Air

Rectifier Device Data

~~

~~
1.5

3
4.5
6
7.5
9 10.5 12 13.5
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 9. Forward Power Dissipation

3-23

15

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MBRB1545CT
Designer'sTM Data Sheet
SWITCHMODETM Power Rectifier
D2PAK Surface Mount Power PackageL-------.J
Motorola Preferred Device·

SCHOTTKY BARRIER
RECTIFIER
15 AMPERES
45 VOLTS

The D2PAK Power Rectifier employs the Schottky Barrier principle
with a platinum barrier metal. These state-ol-the-art devices have the
following features:
•
•
•
•
•
•
•
•

Center-Tap Configuration
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL94, VO at 1/8"
Guaranteed Reverse Avalanche
Short Heat Sink Tab Manufactured - Not Sheared!
Similar in Size to the Industry Standard TO-220 Package

,

..
~4

3~

,.'
·3

Mechanical Characteristics
CASE 418B-Ol
02PAK
• Case: Epoxy, Molded
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Available in 24 mm Tape and Reel, 800 units per 13" reel by adding a "T4" suffix to the part number
• Marking: B1545T
MAXIMUM RATINGS, PER LEG
Rating

Symbol

Value

Unit

VRRM
VRWM
VR

45

Volts

IF(AV)

7.5
15

Amps

IFRM

15

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2.0 118, 1.0 kHz)

IRRM

1.0

Amp

Tstg

-65 to +175

TJ

-65 to +150

'c
'c

dv/dt

10000

V/I1S

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC 105'C

=

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC

Total Device

=105'C

Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR)

THERMAL CHARACTERISTICS, PER LEG
Thermal Resistance - Junction to Case
- Junction to Ambient (1)

2.0
50

(1) When mounted using minimum recommended pad size on FR-4 board,
Designer'. Data for ''Worst CUSH Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing
boundaries on device characteristics - are given to facilitate ''worst case" design.

Preferred devices are Motorola recommended choices for future use and best overall value.

R.v2

3-24

Rectifier Device Data

MBRB1545CT

ELECTRICAL CHARACTERISTICS, PER LEG
Rating

Symbol

Maximum Instantaneous Forward Voltage (2)
(iF 7.5 Amps, TJ 125°C)
(iF 15 Amps, TJ 125°C)
(iF 15 Amps, T J 25°C)

vF

Maximum Instantaneous Reverse Current (2)
(Rated de Voltage, T J 125°C)
(Rated de Voltage, T J 25°C)

iR

=
=
=

=
=
=

Value

Unit
Volts

0.57
0.72
0.84

=
=

mA
15
0.1

(2) Pulse Test: Pulse Width = 300 115, Duty Cycle s 2%.

•

U)
Q.

~

I-

Z

w

50
30
20

<"
g

:;:,

zfil

~

./

a:
a:
:;:,
u

r-

-

~

/

i1i
...J

0.1

w

B5°C

~
w
>
w 0.01
a:

125°C 85°C 25°C

j5

en
;;;
.!:f.

125°C

w

//

1
0.5

zw

,,~

~
a:

f2en

10

I-

a:
a:
u 10
c
a:

:;:,

-

25°C

.!E
0.1

0.2

0.3

0.4

0.5

0.6

0.7

O.B

0.001 0

0.9

10

20

30

./

40

50

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 1, Typical Forward Voltage, Per Leg

Figure 2. Typical Reverse Current, Per Leg

U)

~
~
z

16r---,----.--~----r---,_---.------_.

TJ = 125°C

Q 14~--~--~----+---~---4----+---

~

~

12~--1----+----t---

c
a: 101---/---+

~c

LL

!Z

w

a:
a:
u
c
a:

:;:,

"",-

12

"\

WAVE

w

12w

,

~
'\ ~

~

~

°O~-:~----4~--~6----B~--1~0----IL2--~14--~16
IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 3. Typical Forward Power Dissipation

Rectifier Device Data

T

RATED VOLTAGE APPLIED _
ReJC=2°CIW

DC

SQUAR~ ~

10

T

I

"'- "-

(!)

~w

Q.

~

f2

~

~

16
14

~
a:

a:

~~

U)
Q.

::E

~

\

$'
120

125

130

135

140

145

150

155

TC, CASE TEMPERATURE (OC)

Figure 4. Current Derating, Case

3--25

160

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MBRB2060CT

Designer'sTM Data Sheet
SWITCHMODETM Power Rectifier

Motorola Preferred Device

02PAK Surface Mount Power Package
Employs the use of the Schottky Barrier principle with a platinum barrier metal.
These state-of-the-art devices have the following features:

•

•
•
•
•
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
60 VOLTS

Package Designed for Power Surface Mount Applications
Center-Tap Configuration
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL94, Vo at 1/8"
Guaranteed Reverse Avalanche
Short Heat Sink Tab Manufactured - Not Sheared!
Similar in Size to Industry Standard T0-220 Package

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.7 grams (approximately)
CASE 41 BEHl2
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Available in 24 mm Tape and Reel, 800 units per 13" reel by adding a "T4" suffix to the part number
• Marking: B2060T
MAXIMUM RATINGS, PER LEG
Symbol

Value

Unit

VRRM
VRWM
VR

60

Volts

IF(AV)

10
20

Amps

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 100°C

IFRM

20

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2.0 lIS, 1.0 kHz)

IRRM

0.5

Amp

Tstg

-65 to +175

°c

TJ

-65 to +150

°C

dvldt

10000

VIlIS

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 110°C

Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR)

Total Device

THERMAL CHARACTERISTICS, PER LEG
Thermal Resistance - Junction to Case
- Junction to Ambient (2)
(2) See Chapter 7 for mounting conditions

Preferred devices are Motorola recommended chOIces for future use and best overall value.

Designer'S Data for "Worst Case" ConditIons - The DeSigner's Data Sheet permits the design of most circuits entirely from the information presented. Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

Rev 1

3-26

Rectifier Device Data

MBRB2060CT

ELECTRICAL CHARACTERISTICS, PER LEG
Rating

Symbol

Maximum Instantaneous Forward Voltage (1)
(iF 20 Amps, TJ 125"C)
(iF 20 Amps, TJ 25"C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage, T J 125"C)
(Rated de Voltage, T J 25"C)

iR

=
=

=
=

Value

Unit
Volts

0.85
0.95

=
=

rnA
150
0.15

(1) Pulse Test: Pulse Width = 300 !lS, Duty Cycle !S: 2%

iii
a..

~
~

a:
a:

13
c
a:

50
150"C "I
W
175"C "- /7

20

"P

10

~i= TJ -150"C

/

=

100"C

~

'/

f2

en

/

/J

@

//

z
j5
z

'L

/

/

TJ = 25"C

===
-

/

~
a:
a:

f-f--==
TJ = 100"C

:::J
U

w

en
a:
w

~ 0.1

/

ri:

J

j5
en

0.Q1

~ 0.5

.!f.

0.1

0.3
0.4
0.5 0.6
0.7
0.8
VJ; INSTANTANEOUS VOLTAGE (VOLTS)

0.2

I--f-

§§§

0.9

:::J
U

c
a:

20
RATED VOLTAGE _

'\ \
\.DC
SQUAR~\
WAVE
'\
I'\. '\
'\ \

~ 16

w

'"w~

iii 16

12

::::

~
"90

100
110
120
130
140
TC, CASE TEMPERATURE ("C)

I

~
~w

::::

PI
IpK/IAV= 10

_

160

~V

/

~

~ k::?
~ ./

7

/ V . . . ~. /

IpJw
a: 24
a:

~

TJ-25"C

20

Figure 1. Typical Forward Voltage Per Diode

":::;;

II

.....

6
10
12
14
AVERAGE CURRENT (AMPS)

WAVE

DC

16

18

Figure 4. Average Power Dissipation and
Average Current

3-27

20

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Designer'sTM Data Sheet
SWITCHMODETM Power Rectifier

MBRB20100CT
Motorola Preferred Device

02PAK Surface Mount Power Package
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
100 VOLTS

The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a
. platinum barrier metal. These state-of-the-art devices have the following features:

•

•
•
•
•
•
•
•
•
•

Package Designed for Power Surface Mount Applications
Center-Tap Configuration
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL94, Vo at 1/8"
Guaranteed Reverse Avalanche
Short Heat Sink Tab Manufactured - Not Sheared!
Similar in Size to Industry Standard TQ-220 Package

,~.
3

Mechanical Characteristics
• .Case: Epoxy, Molded
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Available in 24 mm Tape and Reel, 800 units per 13" reel by adding a ''T4'' suffix to the part number
• Marking: B20100t

CASE 4181Hl2
02PAK

MAXIMUM RATINGS, PER LEG
Rating

Symbol

Value

Unit

VRRM
VRWM
VR

100

Volts

IF(AV)

10
20

Amps

IFRM

20

Amps

Non-repetitive Peak Surge Current
.(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2.0 lIS, 1.0 kHz)

IRRM

0.5

Amp

Storage Temperature

Tstg

-65 to +175

·C

TJ

-65 to +150

·C

dvldt

10000

VIlIS

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Reclified Forward Current
(Rated VR) TC 110·C

=

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC

Total Device

=100·C

Operating Junction Temperature
Voltage Rate of Change (Rated VR)

THERMAL CHARACTERISTICS, PER LEG
Thenmal Resistance - Junction to Case
- Junction to Ambient (2)
(2) See Chapter 7 for mounting conditions

Preferred devices are Motorola recommended choices for future use and best overall value.

DeSigner's Data for "Worst Casen Conditions - The Designer's Data Sheet permits the design of most Circuits entirely from the information presented. Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

Rev'

3--28

Rectifier Device Data

MBRB20100CT

ELECTRICAL CHARACTERISTICS, PER LEG
Rating
Maximum Instantaneous Forward Voltage (t)

(iF= 10 Amp, TC
(iF = 10 Amp, TC
(iF = 20 Amp, TC
(iF = 20 Amp, TC

Maximum Instantaneous Reverse Current (1)

(Rated de Voltage, TJ = 125°C)
(Rated de Voltage, T J = 25°C)

= 125°C)
= 25°C)
= 125°C)
= 25°C)

Symbol

Value

Unit

vF

0.75
0.85
0.85
0.95

Volts

iR

6.0
0.1

mA

(1) Pulse Test: Pulse Width", 300 IJ.s, Duty Cycle s2%

en
IJ..

~
i:E

50
150°C "I
19'"
175°C "- §
P

20

'"

0::
0::

13

10

/

Cl

:::::::::

=

100°C

!f2

TJ = 25°C -

r/

en

/1 / /
tU / 1/
r/
1

§
z
z~
~
en

0.01

~ 0.5

.!f.

en
IJ..

0

U

U

Cl

w

20

TJ = 25°C

~

120

20r--.---.--~-'---r--.----------r--.

RATED VOLTAGE
fPPLIED

18
en 16~~~-+--~~+---t-~---+

t

24

S
141--+---+-~

RIlJC=2°CIW

20

12

0::

~

~

U

32

~ 16
0::

'"«w

M

Figure 2. Typical Reverse Current Per Diode

0::

au..

V

Figure 1. Typical Forward Voltage Per Diode

::::>

<.:>

M

VI'o INSTANTANEOUS VOLTAGE (VOLTS)

5- 28
>z
0::
0::

M

40
60
80
100
VR, REVERSE VOLTAGE (VOLTS)

~

:;
W

M

1--1--

~

4

ir

90

'\ \
,\DC
SQUAR~,\
WAVE
'\
.'\. '\
"\
\ 150
110
120
130
140

100
TC, CASE TEMPERATURE (OC)

Figure 3. Typical Current Derating, Case,
Per Leg

Rectifier Device Data

0::

~
w

~

12~--~~~-+---+---+-7~~~~~~~~

10
81--I,---t---+r7t"'-7"9::;"'+:::;;~+--+-

w
~

160

6
8
10
12
14
AVERAGE CURRENT (AMPS)

16

18

Figure 4. Average Power Dissipation and
Average Current

3-29

20

•

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Switch mode ™ Power

MBRB20200CT

Dual Schottky Rectifier

Motorola Preferred Dev~

· .. using SChottky Barrier technology with a platinum barrier metal. This
state-of-the-art device is designed for use in high frequency switching power
supplies and converters with up to 48 volt outputs. They block up to 200 volts
and offer improved Schottky performance at frequencies from 250 'kHz to
5.0 MHz.
•

200 Volt Blocking Voltage

•

Low Forward Voltage Drop

•

Guardring for Stress Protection and High dv/dt Capability (10,000 V/!1s)

•

Dual Diode Construction - Terminals 1 and 3 Must be Connected for
Parallel Operation at Full Rating

SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
200 VOLTS

,~'

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable

3

CASE 418EHl2

Lead and Mounting Surface Temperature for Soldering
Purposes: 260°C Max. for 10 Seconds

•

• Shipped 50 units per plastic tube
• Available in 24 mm Tape and Reel, 800 units per 13N reel by adding II "T4" suffix to the part number
•

Marking: B20200

MAXIMUM RATINGS (PER LEG)
Rating

Symbol

Value

Unit

VRRM
VRWM
VR

200

Volts

IF(AV)

10
20

Amps

Peak Repetitive Forward Current, Per leg
(Rated VR, Square Wave, 20 kHz) TC ~ 90°C

IFRM

20

Amps

Nonrepetltlve Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

lS0

Amps

Peak Repetitive Reverse Surge Current (2.0 JlS, 1.0 kHz)

IRRM

1.0

Amp

TJ

-65 to+1S0

°C

Tstg
dv/dt

-65 to +175

°C

10,000

VlIlS

RWC

2.0

'CIW

VF

0.9
0.8
1.0
0.9

Volis

IR

1.0
50

rnA

SOD

pF

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC ~ 12SoC

Per leg
Per Package

Operating Junction Temperature
Storage Temperature
Voltage Rate of Change (Rated VR)

THERMAL CHARACTERISTICS (PER LEG)

I Thermal Resistance -

Junction to Case

ELECTRICAL CHARACTERISTICS (PER LEG)
Maximum Instantaneous Forward Voltage (1)

(IF
(IF
(IF
(IF

=10 Amps, TC =2S0C)
=10 Amps, TC =12S'C)
=20 Amps, TC =2S'C)
=20 Amps, TC =125°C)

Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TC
(Rated dc Voltage, TC

=25'C)

=12S'C)

DYNAMIC CHARACTERISTICS (PER LEG)

I Capacitance (VR = -S.O V, TC = 25'C, Frequency = 1.0 MHz)
(1) Pulse Test: Pulse Width

=300 Ils, Duty Cycle S2.0%.

Preferred devices are Motorola recommended choices for future USE! and best overall value.

3-30

Rectifier Device Data

MBRB20200CT

100

10,000

a:-

70
::;; 50

TJ = 1 O°C

~

Tj=1500b-l

IZ
W

0:
0:

:::>

'"§'E

/

0:

TJ - 125°C 17"2
10

0:

V,/.;

h V

20


0

f

w

z

I I

;:;
rn

/ If/

~

1f.

I III

I
0.2

l

r

a;
0:
c:
-

I - T =25°

TJ = 25°C

1/

0.01

0.4
0.6
O.B
INSTANTANEOUS VOLTAGE (VOLTS)

vf;

o

5

32

gj

28
24

0:

20

~

Ci

~
"-

~

16
w 12

~

:;(

~ 4

EO o~ ~5

"-

"-

!z
w

20

!

'"

10

'ii~

" "\

;i
§O

IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 3. Forward Power Dissipation

Figure 4. Current Derating, Case

15

20

25

30

35

90

"

de

........ r-..

r--.. ~ t-....

........

o

I'...
25

50
75
100
125
TA. AMBIENTTEMPERATURE (OC)

150

Figure 5. Current Derating, Ambient

Rectifier Device Data

J= 5°

'"

......

100

~~

;i

§O

160

150

:"-

r-.....

~ ......
...... ~

4

100

500

400

SQUARE
WAVE

200

~

~

110
120
130
140
TC. CASE TEMPERATURE (OC)

10

180

SQUARE" ~ de
WAVE
,~

a:

'"ffi
:;(

160

" "'-" :'\.

15

w

RaJA = 16.0~IW
RATED VOLTAGE -

w

140

~ATED VO~!~GE
R JC=2°CIW
-

0:
0:



/
~ ~ V"
fo-"'
/. k:::: ~ "

w

ii)

./

k-"

L

V"/
Vde

IpK
-1- =2
AV /

40

Figure 2. Typical Reverse Current (Per Leg)

SQOA~~
WAVE

TJ = 12°C

20

VR. REVERSE CURRENT (VOLTS)

Figure 1. Typical Forward Voltage (Per Leg)

~ 40
~ 36

-

0.1

175

o

1

10

'-~

20

50

70

100

VR. REVERSE VOLTAGE (VOLTS)

Figure 6. Typical Capacitance (Per Leg)

3--31

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MBRB2515L
Designer'sTM Data Sheet
SWITCHMODETM Power Rectifier
OR'ing Function Diode
D2PAK Surface Mount Power Package SCHOTTKY BARRIER
Motorola Preferred Device

•

RECTIFIER
25 AMPERES
15 VOLTS

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large
metal-to-silicon power diode. State-of-the-art geometry features epitaxial
construction with oxide passivation and metal overlay contact. Ideally suited for
use in low voltage, high frequency switching power supplies, free wheeling
diodes, and polarity protection diodes. These state-of-the-art devices have the
following features:

••

• Guardring for Stress Protection
• Low Forward Voltage
• 100°C Operating Junction Temperature
• Epoxy Meets UL94, VO at 1/8"
• Guaranteed Reverse Avalanche
• Short Heat Sink Tab Manufactured - Not Sheared!
CASE 418B-01
• Similar in Size to the Industry Standard TO-220 Package
·02PAK
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Available in 24 mm Tape and Reel, 800 units per 13" reel by adding a "T4" suffix to the part number
• Marking: B2515L
MAXIMUM RATINGS
Rating

Symbol

Value

Unit

VRRM
VRWM
VR

15

Volts

IFIAV)

25

Amps

IFRM

30

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps

Storage Temperature

TstQ

-65 to +150

°C

TJ

100

°C

dv/dt

10000

VljlS

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR) T C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), T

~

90°C

c ~ 100°C

Operating Junction Temperature
Voltage Rate of Change (Rated VR)

THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Case
- Junction to Ambient (1)

1.0
50

(1) When mounted using minimum recommended pad size on FR4 board.

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. Limit
curves - representing boundaries on device characteristics - are given to facilitate ''worst case" design.

Preferred deVIces are Motorola recommended chOIces for future use and best overall value.

Rev 1

3-32

Rectifier Device Data

MBRB2515L

ELECTRICAL CHARACTERISTICS
Rating

Symbol

Maximum Instantaneous Forward Voltage (2)
(iF= 19 Amps. TJ = 70°C)
(iF 25 Amps. TJ 70°C)
(iF 25 Amps. TJ = 25°C)

VF

Maximum Instantaneous Reverse Current (2)
(Rated de Voltage. TJ 70°C)
(Rated de Voltage. TJ 25°C)

IR

=
=

Value

Unit
Volts

0.28
0.42
0.45

=

=
=

rnA
200
15

(2) Pulse Test: Pulse Width '" 300 IJ.S, Duty Cycle :s:: 2%.

1F

50
~ 30
!z 20

70°C.......

c

1

..t.-"'"
TJ = 25°C

~ 10
i3 7
II:

1000
400
200 I-- TJ = 100°C
!z 100
w
40
~
20
~
10

5

-

~

~

en

1
0.7
z 0.5
~ 0.3
;5 0.2
en
;0; 0.1
.!?

§

•
70°C
25°C

w

~

0.2

~ O. 1

II:

.It 0.02
0.1

0.2
0.3
0.4
Vf', INSTANTANEOUS VOLTAGE (VOLTS)

0.010

0.5

Figure 1. Typical Forward Voltage

6
8
10
12
14
VR. REVERSE VOLTAGE (VOLTS)

16

18

20

Figure 2. Typical Reverse Leakage Current

en
~

~ 40

~

TJ = 70°C

~ 35

iiic
II:

~c

/

30
25 j - - r- IpK =10
IAV

20

II:

~ 15

II:

12

~
w

10

~ 0
~ 0
il:"

a..

5

/ V V

I

/ V
I/. ~V

/

~

~

5

V

-

V

V ...

~

35

~

)~

I

I

V

R9JC = I°CIW

25

~

20

Figure 3. Typical Forward Power Dissipation

~~

.

30

i3
c

~w

I

r- RATED VOLTAGE APPLIED

"

II:

10
15
20
25
30
35
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Rectifier Device Data

40

~
II:
II:

jsauARE

. . . VOC

1F

SaUARE
WAVE

15
10

I'\.DC
~\

'\ ~

40

Ji:'

060

,

'\

.~

65

70

75
80
85
90
TC. CASE TEMPERATURE (OC)

95

Figure 4. Current Derating, Case

3-33

100

I

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Designer'sTM Data Sheet
SWITCHMODETM Power Rectifier

MBRB2535CTL

02PAK Surface Mount Power Package

Motorola Preferred Device

The D2PAK Power Rectifier employs the Schottky Barrier principle in a
large metal-ta-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact.
Ideally suited for use in low voltage, high frequency switching power
supplies, free wheeling diodes, and polarity protection diodes. These
state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIER
25 AMPERES
35 VOLTS

Center-Tap Configuration
Guardring for Stress Protection
Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL94, VO at 1/8"
Guaranteed Reverse Avalanche
Short Heat Sink Tab Manufactured - Not Shearedl
Similar in Size to the Industry Standard T0-220 Package

Mechanical Characteristics
CASE 4188-02
• Case: Epoxy, Molded
02PAK
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces torrosion ReSistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Available in 24 mm Tape and Reel, 800 units per 13" reel by adding a "T4" suffix to the part number
• Marking: B2535L
MAXIMUM RATINGS (PER LEG)
Symbol

Value

Unit

Peak Repetitive Reverse" Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

35

Volts

Average Rectified Forward Current
(Rated VR) TC = 110°C

IF(AV)

12.5

Amps

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), T C = 90°C

IFRM

25

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2.0 I'S, 1.0 kHz)

IRRM

1.0

Amp"

Tstg

-65 to +150

°C

TJ

-65 to +125

°C

dvldt

10,000

VII'S

Storage Temperature
Operating Junction Temperature
Voltage Rate 01 Change (Rated VR)

THERMAL CHARACTERISTICS (PER LEG)
Thermal Resistance -

Junction to Case
Junction to Ambient (1)

2.0
50

(1) When mounted using minimum recommended pad size on FR-t. board.

DeSigner's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. Umit
curves - representing boundaries on device characteristics - are given to facilitate ''worst case" design.
Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

3-34

Rectifier Device Data

MBRB2535CTL

ELECTRICAL CHARACTERISTICS (PER LEG)
Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (2)

Rating
(i F = 25 Amps, TJ = 25°C)
(iF = 12.5 Amps, TJ = 125'C)
(iF = 12.5 Amps, TJ = 25'C)

vF

0.55
0.41
0.47

Volts

Maximum Instantaneous Reverse Current (2)

(Rated de Voltage, TJ = 125'C)
(Rated de Voltage, TJ = 25'C)

iR

500
10

mA

(2) Pulse Test: Pulse Width", 300 J.lS. Duty Cycle s; 2%.

a:-

~

!z
w

~
:::>

g

50
.1

20

1

TJ=125~

10

a:

~

-

TJ = 125'C

-,...-

§.

z"-

100

w

a:
a:
:::>
u
w

TJ = 100'C
10

a:w

~ 0.5
z

w

~
~ 0.2

0.2

I--

a:

II

.!!' 0.1 0 L
0.1

TJ = 25'C
0.1

rr.

v;:; INSTANTANEOUS VOLTAGE (VOLTS)

0.3

0.4

0.5

0.6

0.7

0.8

0.9

10

10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage, Per Leg

Figure 2. Typical Reverse Current, Per Leg

~

TJ=125'C

I

:::;;

h
SINE WAVE
(RESISTIVE LOAD) ./.V

~ ./

~

32

/'

~ ./'
V
~
,.

Rectifier Device Data

a:
a:
:::>
u
c
a:

24

~
a:
~

.....DC

Figure 3. Typical Forward Power Dissipation

28

i

/sQUARE
WAVE

10
15
20
25
30
35
IF(AV), AVERAGE FORWARD CURRENT (AMPS)

"".

~

20

30

......

i'....

" .""

I"---

16

SQUARE"-.

12

DC

:-......
""'- ~

~~

w

~

if:"

I

(RATED Vr APPLIED)
ReJc=2'CIW

:if<
40

35

95

105
115
TC, CASE TEMPERATURE ('C)

Figure 4. Current Derating, Case

"

125

3-35

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MBRB2545CT

Designer'sTM Data Sheet
SWITCHMODETM Power Rectifier

Motorola Preferred Device

02PAK Surface Mount Power Package
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
45 VOLTS

The D2pAK Power Rectifier employs the Schottky Barrier principle with a plaiinum
barrier metal. These state-of-the-art devices have the following features:

• Center-Tap Configuration
• Guardring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Epoxy Meets UL94, VO at 1/8"
• Guaranteed Reverse Avalanche
• Short Heat Sink Tab Manufactured - Not Sheared!
.
. 4
• Similar. in. Size to .the Industry Standard T0-220 Package
Mechanical Characteristics
3
• Case: Epoxy, Molded
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per 'plastic tube
• Available in 24 mm Tape and Reel, 800 units per 13" reel by adding a "T4" suffix to the part number'
• Marking: B2545T
. .
.

1::r.

,~.
3
CASE418B~2

02PAK

. MAXIMUM RATINGS, PER LEG
Symbol

Value

Unit

VRRM
VRWM
VR

45

Volts

IF(AV)

15
30

Amps

IFRM

30

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, Single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2.0 lIS, 1.0 kHz)

.IRRM

1.0

Amp

Tstg

-65 to +175

°c

TJ

-65 to +150

ac

dv/dt

10000

VIlIS

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR) TC

=130°C
Total Device

Peak Repetnive Forward Current
(Rated VR, Square Wave, 20 kHz), TC

=130aC

Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR)

THERMAL CHARACTERISTICS, PER LEG
. Thermal Resistance - Junction to Case
- Junction to Ambient (1)
(1) When mounted using min!f!lum recommended pad size on FR-4 board.

1.5
·50
,.

,

Designer's Data for "Worst Case" Conditions - The DeSigner's Data Sheet permits the design of most circuits entirety from the information presented. Limit

curves - representing boundaries on device characteristics - are given to facilitate "worst case" deSign.

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 2

3-36

Rectifier Device Data

MBRB2545CT

ELECTRICAL CHARACTERISTICS, PER LEG
Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (2)

(iF = 30 Amps. TJ;= 125'C)
(iF = 30 Amps. T J = 25'C) .

vF

0.73
0.82

Volts

Maximum Instantaneous Reverse Current (2)

(Rated de Voltage. TJ = 125'C)
(Rated de Voltage. TJ = 25'C)

iR

40
0.2

mA

Rating

(2) Pulse Test: Pulse WIdth = 300 IlS, Duty Cycle s 2%.

en

200

~ 100
~ 70
15 SO
a:
a: 30
13
c 20
a:

~

f2

~
@
z
;5
z
;5

'";;;

.!f.

.......:;

TJ = 12S'C
100'C
2S'C

10
7

1

r-

15
a:

c/ V

a:

I

1

0

II

20

...-

~ TJ=IS0'C

10 1=1= 12S'C

W

~_

7S'C

0.4
0.2

iii

I

0.02
a:_ 0.01
0.004
0.002 0

2S'C

§

11 1

1.0

20

10

~

32

~

28

15
a:

24

a:

'\..

"- '\.

:::J

'" 20
@
~ 16

SQUARE"WAVE

a:

f2
w

~

::c

~

i!="

Rectifier Device Data

SO

Figure 2. Typical Reverse Current, Per Leg

::;;

Figure 3. Typical Forward Power Dissipation

40

30

VR. REVERSE VOLTAGE "(VOLTS)

Figure 1. Typical Forward Voltage, Per Leg

If', AVERAGE FORWARD CURRENT (AMPS)

-

w
0.1
"'wa: 0.04

1/

..--

-

100'C

'"

V0

0.2
0.4
0.6
0.8
VF.INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

40

:::J

"Y: ,,-/

S
/

100

12

f- RATED VOLTAGE APPLIED
ReJC = I.S'CIW

0
110

120

~C

'"

"\

\

\
\

'\ \
\

\
150

130
140
TC. CASE TEMPERATURE ('C)

Figure 4. Current Derating, Case

3-37

•

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

1N5817
1N5818
1N5819

Axial Lead Rectifiers
· .. employing the Schottky Barrier principle in a large area metai-to-silicon power
diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction
with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in
low-voltage, high-frequency Inverters, free wheeling diodes, and polarity protection
diodes.

1N6817 and 1N5819are
Motorola Preferred DevIces

SCHOTIKY BARRIER
RECTIFIERS
1 AMPERE
20,30 and 40 VOLTS

• Extremely Low vF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
Mechenlcel Characteristics

• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead and Mounting· Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16" from case
• Shipped in plastiC bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to
the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
. Rating
Peak Repetllive Reverse Vollage
Working Peak Reverse Voltage
DC Blocking Voltage
Non-Repet~ive Peak Reverse Voltage

RMS Reverse Vo~age
Average Rectified Forward Current (2)
(VR(equiv) s 0.2 VR(dc). TL 90'C.
RaJA" 80°CfW, P.C. Board Mounting, see Note 2, TA" 55'C)

1N5817

1N5818

1N5819

Unit

\fRRM
VRWM
VR

20

30

40

V

VRSM.

24

36

48

V

VR(RMS)

14

21

28

V

1.0

10

=

Ambient Temperature (Rated VR(dc), PF(AV)

Symbol

=0, RaJA =80'CfW)

TA

Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions. half-wave. single phase 60 Hz.
TL 70'C)

85

A

75

80

'C

IFSM

25 (for one cycle)

A

TJ, Tstg

-65 to +125

'C

TJ(pk)

150

'C

=

Operating and Storage Junction Temperature Range (Reverse

Vo~age applied)

Peak Operating Junction Temperature (Forward Current applied)
THERMAL CHARACTERISTICS (2)
Characteristic

Max

Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TL

80

=25'C unless otherwise noted) (2)

CharacteristiC
Maximum Instantaneous Forward Voltage (1)

(IF=O.1 A)
(iF=1.0A)
(iF 3.0 A)

Symbol

1N5817

1N5818

1N5819

Unit

vF

0.3:2
0.45
0.75

0.33
0.55
0.875

0.34
0.6
0.9

V

IR

1.0
10

1.0
10

1.0
10

mA

=

Maximum Instantaneous Reverse Current @ Rated de Voltage (1)

(TL= 25'C)
(TL= 100'C)

(1) Pulse Test: Pulse WIdth = 300 jist Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32'" from case.

Rev 3

3-38

Rectifier Device Data

1N5817,1N5818,1N5819

NOTE 1 -

125

DETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
TA(max) = TJ(max) - ROJAPF(AV) - ROJAPR(AV)
where TA(max) = Maximum allowable ambient temperature
TJ(max) = Maximum allowable junction temperature
(12S'C or the temperature at which thermal
runaway occurs, whichever is lowest)
PF(AV) = Average forward power dissipation
PR(AV) = Average reverse power dissipation
ROJA = Junction-ta-ambient thermal resistance

(1)

r:;

I)-

c..

iii

ROJA ('C/W) = 110

~ 95

u

!

"""'-..."

~v......

/~ V ...................

"'"'

80

85

{E

Inspection of equations (2) and (3) reveals that TR is the ambient
temperature at which thermal runaway occurs or where TJ = 125'C,
when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2; and 3 as a
difference in the rate of change olthe slope in the vicinity of 115'C. The
data of Figures 1; 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an eqUiValent de voltage to use for conservative design, that is:
VR(equiv) = Vin(PK) x F
(4)
The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes.

6"

~ 115

~w

c..

~

~

.............

............

"'

15

~ /40
~ ~

..... 1"'-

i"
i"

ROJA ('CIW) = 110

,..., ,

80 60

95

~

...........

~
("'...
.........

{E
75

,,

20

3.0

4.0

23

30

/

"'- ..........
.........

...........

............

"' "'"'

............

"-

85

..........
.........
........... ..........

""-

.........
.........

5.0
7.0
10
15
20
VR, DC REVERSE VOLTAGE (VOLTS)

30

Figure 2, Maximum Reference Temperature
1N5818

125

-

~

6"
~ 115

a:
::>
!;(

~ 105

~

"Values given are for the 1NSBIB. Power is slightly lower for the
1NSB 17 because of its lower forward voltage, and higher for the
lNSBI9.

r--.;

ifi
a:

=

Step 4. Find TA(max) from equation (3).
TA(max) = 109 - (BO) (O.S) = 69'C.

4.0 5.0
7.0
10
VR, DC REVERSE VOLTAGE (VOLTS)

--

~~

t05

~

EXAMPLE: FindTA(max) forI NSB1Boperatedina 12-voltdcsupply
usingabridgecircuitwlthcapacitivefiltersuchthatIOC=0.4A(1F(AV) =
0.5 A), I(FM)II(AV) = 10, Input Voltage = 10 V(rms), ROJA = BO'CIW.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
:. VR(equiv) = (1.41)(10)(0.6S) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 109'C
@ VR 9.2 V and ROJA = BO'CIW.
Step 3. Find PF(AV) from Figure 4. "Read PF(AV) = 0.5 W
I(FM)
I(AV) = 10 and IF(AV) = 0.5 A.

3.0

""'

,,,-

Figure 1, Maximum Reference Temperature
1N5817

125
(3)

2.0

23

'f-....f "

60

75

30

~~,~

.........

IE 105

Substituting equation (2) into equation (1) yields:

@

....... r-... -....: ['...

EllS
w
a:

Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The
figures solve for a reference temperature as determined by equation
(2).
TR = TJ(max) - ROJAPR(AV)
(2)

TA(max) = TR - ROJAPF(AV)

40

'- ~ ~ ~ ~ ~

~

95

40

r':'" .:::::: t--.. r-r- ~

,,/ ,;' 30J.

..... I'-... i' .................. ~ 23
~~~ [".... "- r.......
ROJA ('C/W) = 110 V~
............ "80
......... .............
"- .....
60

m

"""

~ 85
{E
754.0

5.0

........"'"

7.0
10
15
20
VR, DC REVERSE VOLTAGE (VOLTS)

,
r-.....
"- i'..
i'..
i'..

"- ~40

30

Figure 3, Maximum Reference Temperature
1N5819
Table 1, Values for Factor F
Circuit

Half Wave

Full Wave, Bridge

Load

Resistive

Capacitive'

ReSistive

Sine Wave

O.S

1.3

O.S

Square Wave

0.7S

1.5

0.75

*Note that VR(PK) ... 2.0 Vln(PK).

Rectifier Device Data

Full Wave, Center Tapped·t
Resistive

Capacitive

0.65

1.0

1.3

0.75

1.5

1.5

Capacitive

t Use line to center tap voltage for Vln"

3-39

1N5817,1N5818,1N5819

~

90
80 ~

~
l

./

70

§z

MAXIMUM ./

~ 50
W

§!l

40

~
en
c;;
w '30
a:
....
..: 20
::0;
a:
w
::t: 10

/- V,.....

/

./

/"'"

/""

118

...,

3/8

,114

3.0

.,./

V

V

O. 3
O. 2

5/8

5 ....

Capacil!ve {
Loads

a:
~

~

illa:

dc=

....... r".:

./

F==

f=:

TJ = 125·C

........:: V..,.,.;: ~ V'

......,..,....... ~);""

o.1~ V
7/8

3/4

1.0

[0.07
tf- 0.05

0.2

0.4
0.6 0.8 1.0
2.0
IF(AV), AVERAGE FORI'!ARD CURRENT (AMP) .

4.0

Figure 5.. Forward Power Dissipation
1N5817-19

1.0
0.7
0.5

0.3
0.2

~
en

r/

SQUARE WAVE

Figure 4. Steady-8tate Thermal Resistance

~~

~

~~

20

L, LEAD LENGTH (INCHES)

a:

v .......
./ ~

10 "["-..

ot::

1.
O.7
O.5

,

112

Sine Wave
(ljesistive Load)

.!rEM> = "

2.OI(AV) I

/""TYPICAL

V ..... /

J-"
CI>

5. 0

~

/

./

60

en
~

I
I
I,
BOTH LEADS TO HI?ITSINK,
EQUAL LENGTH

0

..:

l..- I--

............

0.1

~ 0.07
w. 0.05
i!:
!z

0.03
w 0.02

ZruL(I) = ZaJL • r(tl

•

,
1p

. b.

.....

~

•

•

• •

~Pk

OUTYCYClE,O=\I1,
PEAK POWER. Ppk. is peak 01 an

TIME

~

11

ATJl= pI<. ROJLlO, (.- 01·

equivalent square power pufse.

«', ''PI +f('pl -«.,11

where
ATJL .. the increase in junction le~rature above the lead tempe'rature
r(t) '" normalized value of transient thermal resistance al time, I, from Figure 6, J.e.:
~t1 + Ipl '" normalized value of transient themtal resistance at time, 11 ..j. tp

0.2

1.0

0.5

2.0

5.0

10

20

50

100

200

500

1.0k

2.0k

5.0k

10k,

I, TIME (ms)

Figure 6. Thermal Response

Mounting Method 1

NOTE 2 - MOUNTING DATA
Dala shown for Ihermal resislance junction-to-ambient (RaJA) for
the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be'
measured.

P.C. Board with
1-1/2" x 1_112"
copper surface.

~:

1

2

3

Lead Length, L (In)

118

1/4

112

314

RaJA

52
67

65
80

72
87

85
100

·CIW
·CIW

50

·CIW

P.C. Board with
1-1/2" x 1-1/2"
copper surface.

L = 3/8"

TYPICAL VALUES FOR RaJA IN STILL AIR
Mounting
Method

Mounting Method 3

Mounting Method 2

BOARD GROUND
PLANE

.~
VECTOR PIN MOUNTING

3-40·

Rectifier Device.Data

1N5817,1N5818,1N5819

NOTE 3 - THERMAL CIRCUIT MODEL
(For heat conduction through the leads)

Use of the above model permits jU~ction to lead thermal resistance
for any mounting configuration to be found. For a given total lead
length, lowest values occur when one side of the rectifier is brought
as close as possible to the heatsink. Terms in the model signify:

(Subscripts A and K refer to anode and calhode sides;respectively.)
Values for Ihermal resislance components are:
ReL IOO°ClWlin typically and 120°ClWlin maximum
ReJ = 36°CIW typically and 46°CIW maximum.

=

TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
Res = Thermal Resistance, Heatsink to Ambient
ReL = Thermal Resistance, Lead to Heatsink
RaJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
125

......... r-...

~

v

20

5.0 =rC=loooc

!!z

3.0

w
~

2.0

::J
U

~

C
II:

~

1.0

f2

0.7

II:
rJ)

@
Z

~

rJ)

"0..
i1i

f= 60 Hz

.......... .......

~

95
85
_ Surge Applied at
Rated Load Condilions

rJ)

,g.

25°C

75
1.0

I

I

2.0

3.0

5.0 7.0 10
20
NUMBER OF CYCLES

30 _ TJ=125°C.
20

JJ

0.3

I

rJ)

;:; o. 2

II

1/

.~

<.s.
I:z
w

II:
II:
::J
U

O. I

w

rJ)

0.07

~

15
5.0
3.0
2.0
1.0

~ ~IOO°C

w

>
w

II:

I

I

0.021/

!!-

I
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
v;:. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

0.5
0.3
0.2

[:::::2

==- 25°C

0.1
0.05
0.03

a

4.0

~.:-:

-

....-.

~ ~7s°C

II:

0.05

0.1

II:
::J

I+-

40

30

70 lOa

Figure 8. Maximum Non-Repetitive Surge Current

0.5

0.03

'"

I Cycle

r.-

L

z

~

--

I- TL=7O"C

J\.J'L

--I

w 105

./

./

..... i"-

u

r/
HII'

II

-

II:
II:
::J

,

7.0

115

!z
w

/: V

10

~

!

,..

8.0

-.-

12

-

.--

-

-

16

- --

;-

-20

IN5817 ~
-----IN5818
IN5819-

==

24

28

32

36

40

VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Typical Forward Voltage

Rectifier Device Data

Figure 9. Typical Reverse Current

3-41

1N5817,1N5818,1N5819

-

NOTE 4 - HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority carrierconduction, it is not subjectto junction diode forward and reverse recovery transients due to minority carrier injection and stored charge.
Satisfactory circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable capacitance. (See
Figure 10.)
Rectification efficiency measurements show that operation will be
satisfactory up to several megahertz. For example, relative waveform
rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the
ratio of dc power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for Sine wave inputs.
However, in contrast to ordinary junction diodes, the loss in waveform
efficiency is not indicative of power loss: it is simply a result of reverse
current flow through the diode capacitance, which. lowers the dc output
voltage.

200

u:-

.e.
w
()

z

;5
C3
i'i:
..:
()
c5

r--..... ~l!'

100

lN~817

70

,

lNS818

50

I

I

lN5819

I , ......

r--.

30
TJ = 250 C
f=1.0MHz

20

10

0.4 0.6 0.8 1.0

2.0

4.0 6.0 8.0 10

"
'''-

20

""
40

VR, REVERSE VOLTAGE (VOLTS)

Figure 10. Typical Capacitance

3-42

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MBR150
MBR160

Axial Lead Rectifiers
· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters,
free wheeling diodes, and polarity protection diodes.

MBR1601••
Motorola Preferred Device

SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
50.60 VOLTS

• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for
10 Seconds, 1/16" from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: B150, B160

/

~PLASTIC

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
(VR(equiv) '" 0.2 VR(dc), TL = 90'C, ReJA
see Note 3, TA = 55'C)

Symbol

MBR150

MBR160

Unit

VRRM
VRWM
VR

50

60

'Volts

VR(RMS)

35

42

Volts

10

1

Amp

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, half-wave,
single phase, 60 Hz, TL = 70'C)

IFSM

25 (for one cycle)

Amps

Operating and Storage Junction Temperature Range
(Reverse Voltage applied)

TJ, Tstg

-65 to + 150

'C

TJ(pk)

150

'C

= 80'CIW, P.C. Board Mounting,

Peak Operating Junction Temperature
(Forward Current applied)
TH.ERMAL CHARACTERISTICS (Notes 3 and 4)
Characteristic

Max

Thermal Resistance, Junction to Ambient

BO

ELECTRICAL CHARACTERISTICS (TL = 25'C unless otherwise noted) (2)
Characteristic
Maximum Instantaneous Forward
(iF = 0.1 A)
(iF = 1 A)
(iF = 3 A)

V~ltage

(1)

Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
tTL = 25'C)
(TL = 100'C)

Symbol

Max

Unit
Volt

vF
0.550
0.750
1.000

rnA

iR
0.5
5

(1) Pulse Test: Pulse Width = 300 I's, Duty Cycle" 2%.
(2) Lead Temperature reference is cathode lead 1132" from case.
Rev 1

Rectifier Device Data

3-43

•

MBR150, MBR160

5

10

t--r-'- TJ

-15O"~

r- ~100"C

........25'C
./

/

J

v/ v
I
/
II II /

,2

,~

a
c

~,
~

nl

z

lL"

~

n'

II:
::;)

t:l
II:

~

75,,(=

0.1

u

n,

n.n'

JF.

v.~LI

0

0.7

10

0.5

I

1/

0.3

I

'::;)

0.2

I

I

Figure 2. Typical Reverse Current*The curves shown are typical fortha highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be
,estimated from. these same curves if VR is sufficiently below rated VR.

II

I

o

20
VR. REVERSE VOLTAGE (VOLTS)

I

I

, en

51
z~
~
;!;

~

2
1

1
....

- -

I

5

0.1

SQUAR~

4

.!:?
0.07

//

0.05

./. /dc

."

2 '-!f!\ ~0-1\
_IAV

0.03
0.02

..

I

\

\. ~ V

.>-: ~

I'Ao ~

~~ P"
~ IIIii"'"

o

0.4

0.2

0.6
O.B
1
1.2
vF. INSTANTANEOUS VOLTAGE (VOLTS)

1.4

1.6

1
2
3
4,
IF(AV). AVERAGE FORWARD CURRENT (AMPS) ,

Figure 3. Forward Power Dissipetion

Figure 1. Typical Forward Voltage

THERMAL CHARACTERISTICS

I
II:

I
o.7
0.5

~

O.3

_1----

~ O.2

~

I

~ 0.07
II:

~
!Z

0.05
0.03

~ 0.02

1--11--1

-

:e~ 0.010.1

= ZruL' r(l)

~
P

i.--' ~

o. 1

Z8Jl(I)

DUTY CYCLE. D = f':1
PEAK POWER. P k. I PEAK OF AN
TIME EQUIVALENT Sd'UARE POWER PULSE.

6.TJL Ppk'R8JLlD + (1 -D)'rill + Ip) + r(lp) - rillli
WHERE
6.TJL = THE INCREASE IN JUNCTION TEMPERATURE ABOVE THE LEAD TEMPERATURE
rll) = NORMAlIZED VALUE OF TRANSIENT THERMAL RESISTANCE AT TIME. I. FROM FIGURE 4. i.8.:
rill + Ip) = NORMAUZED VALUE OF TRANSIENT THERMAL RESISTANCE AT TIME. II + Ip.

0.2

0.5

10

20
50
TIME Imo)

100

200

500

1k

2k

5k

~

Figure 4. Thermal Response

Rectifier Device Data

10 k

MBR150, MBR160

0

~O

0t--+- BOnl LEADS HEAT
EaUAL ~ENGTH
0

200

~INK,
./

./

0
MAXIMUM

0

V
../

0

/

°v
o .,- /'"
0

118

./""

V

./'"

V

V

V


@

0.2

z

./

1

.,....,

I--

z

g§

/

::::>
u

~
I

~

I

E:

~ 0.1

~ 0.05
~

·~0.02

lK
400
20O-TJ = 150'C
100
'--125'C
40
20
10
=l00'C

-

I

roo-

=

I--

-

1

~:;

o. 1
0.04
0.02
0.01 0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
vF. INSTANTANEOUS VOLTAGE (VOLTS)-

...-

I--"

-

10

Figure 1. Typical Forward Voltage

20

30
40
50
60
70
VR. REVERSE VOLTAGE (VOLTS)

80

90

100

Figure 2. Typical Reverse Current·
-The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.

f - - 1-0..........

","",,

,/

~

SOUARE WAVE

"~

SQUARE WAVE"

V

~
"\~

40

. /~

1

'\.
W

,/
. /V ......

~

60
80
~
rn ~
TA. AMBIENT TEMPERATURE ('C)

Figure 3. Current Derating
(Mounting method 3 per note

~c

_

-

~V

.:;:::;P
~

v-:: V

1
2
3
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

~

Figure 4. Power DissiPlltion

1.1

150
100
90
80
70
~
60
~
50
40

g
a!
!a:
u
u

""- I'..

"

30

.........

-........

-

r-

20
15

........

TJ = 25'C
frEST = 1 MHz

W

W

ro

30
40
50
60
VR. REVERSE VOLTAGE (VOLTS)

80

M

~

Figure 5. Typical Capacitance

Rectifier Device Data

3-47

•

I

MBR170j MBR180, MBR190, MBR1100

NOTE 1 - MOUNTING DATA:
Data shoWn for thermal resistance junction-to-ambient (R8JA)
for the mountings shown is to be used as typical guideline values
for preliminary" engineering or in case the tie point temperature
'
cannot be measured.
Typical Values for R8JA in Still Air

1/8

1/4

112

1

,52

65

72

85

.C!W

2

67

80

87

100

·CIW

50

3

'~

~

~
Mounting Method 2

~
VECTOR PIN MOUNTiNG

·CIW

L = 318"

~JII~
"

BOARD GROUND
PLANE

ReSIK)
TA(K)

--=-

R8JA

Mounting Method 3
P.C. Board with
1-1/2" x 1-1/2"
copper surfa~e.

Mounting Method 1
P.C. Board with
1-1/2" x 1-1/2"
copper surface.

ReSIA)

-=- TA(A)

Lead Length, L (in)

Mounting
Method

3/4

NOTE 2 - THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)

Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given
total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink, 'Terms in
the model signify:
TA = Ambient Temperature 'TC = Case Temperature
TL = Lead Temperature
TJ =, Junction Temperature
Res = Thermal Resistance, Heat Sink to Ambient
R8L = Thermal Resistance, Lead to Heat Sink
R8J = Thermal Resistance, Junction to Case
Po = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are:
R6L = 100·C!W/in typically and 120·ClWlin'maximum.
, R6J "= 3S·CIW typically and 4S·CIW maximum.
NOTE 3 - HIGH FREQUENCY OPERATION:
Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward
and reverse recovery transients due to minority carrier injection

and stored charge, Satisfactory ' circuit analysis work may be
performed by using a model consisting of an ideal diode in
parallel with a variable capacitance. (See Figure 5.)
Rectification efficiency measurements show that operation
will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of de power to RMS power in the
load is 0.28 at this frequency, whereas perfect rectification would
yield 0.40S for sine wave inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficiency is not indicative
of power loss: it is simply a result of reverse currentflowthrough
the diode capacitance, which lowers the de output voltage.

3-48

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR - - - - -

TECHNICAL DATA

lN5820
lN5821
lN5822

•

1N5820 and 1N5822 are

Designer's Data Sheet

Motorola Preferred Devices

Axial Lead Rectifiers
· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide
passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage,
high-frequency inverters, free wheeling diodes, and polarity protection diodes.

SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES

• Extremely Low vF
• Low Stored Charge, Majority
• Low Power Loss/High Efficiency
Carrier Conduction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish' All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220'C Max. for
10 Seconds, 1/16" from case
• Shipped in plastic bags, 5,000 per bag.
• Available Tape and Reeled, 1500 per reel, by adding a "RL" suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N5820, 1N5821 , 1 N5822

SVmbol

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
RMS Reverse Voltage

Average Rectified Forward Current 12)
VAlequivl "0.2 VAldel, TL = 95°C
IA9JA = 28 oCIW, P.C. Board

VAAM
VAWM
VA
VASM
VAIAMSI

1N5820
20

lN5821
30

24
14

36
21
3.0

48 .

85

80

..

10

lN5822
40

28

.

20, 3D, 40 VOLTS

•
Unit
V

CASE 267-1)3
PLASTIC

V
V
.A

Mounting, see Note 21

Ambient Temperature
Aated VAlde), PFIAV) = 0
A9 JA = 280 CIW
Non-Repetitive Peak Surge Current

TA

90

IFSM

~80

°c

(for one cycle)~

A

(Surge applied at rated load condi-

tions, half wave, single phase 60 Hz,
TL = 75°C)
Operating and

Stora~e

TJ, T stg _ _ _ _ -65 to +125 ____

Junction

Temperature Range (Reverse
Voltage applied)
Peak Operating Junction Temperature
IForward Current Applied)

TJlpk)

.

•

150

~oC

°c

'THERMAL CHARACTERISTICS (Note 2)
Characteristic
Thermal Resistance, Junction to Ambient

Characteristic
Maximum Instantaneous'
Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF =9.4 Amp)
Maximum Instantaneous
Reverse Current @ Rated
de Voltage 11)
TL = 25°C
TL = 100°C

Symbol

lN5820

lN5821

lN5822

Unit
V

vF
0.370
0.475
0.850

0.380
0.500
0.900

0.390
0.525
0.950

!R

mA

2.0
20

2.0
20

2.0
20

11) Pulse Test: Puis. Width = 300 ~s, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1132" from case.
-Indicates JEDEC Registered Data for 1 N5820~22.

Rev 2

Rectifier Device Data

3-49

· 1 N5820 thru 1 N5822
NOTE 1 - DETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 VRWM- Proper derating may be aceom-

slope in the vicinity of 11Soe. The data of Figures ,. 2. and 3 is

based upon de conditions. For use in common rectifier circuits.
Table 1 indicates suggested factors for an equivalent de voltage
to use for conservative design, that is:

plished. bV use of equation (1).
TA(max) =TJ(max) -ROJAPF(AV) -ROJAPR(AV)
where T A(max) = Maximum allowable ambient temperature
T J(max) = Maximum allowable junction temperature

= V(FM) X

VR(equiv)

(1)

(4)

F

The factor F is derived by considering the properties'of the various
rectifier circuits and the reverse characteristics of Schottky diodes.

(12SoC or the temperature at which thermal
runaway occurs, whichever is lowest)

EXAMPLE: Find 'TA(max) for 1 N5821 operated in a 12·volt

dc supply !,Ising a bridge circuit with capacitive filter such that

PF(AV) = Average forward power dissipation
PR (A V) "" Average reverse power dissipation

IOC = 2.0 A IIF(AV) = 1.0 A),
= 10 V(rms), ROJA = 40 oCIW.

R6JA = Junction-to-ambient thermal resistance

Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
:. VR (equiv) (1.41 )(10)(0.65) 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 1080 C
@ VR ::: 9.2 V and R6JA ::: 400 C/W.
Step 3. Find PF(AV) from Figure 6. "Read PF(AV) = 0.85 W
I(FM)
@ I(AV) = 10 and IF(AV) = 1.0 A.

=

Figures 1, 2, and 3 permit easier use of equation (1) bV taking

reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
TR = TJ(max) - ROJAPR(AV)
Substituting equation (2) into equation (1) vields:

= 10,Input Voltage

I(FM)/I(AV)

(2)

TA(max) = TR - ROJAPF(AV)
(3)
Inspection of equations (2) and (3) reveals that TR is the

=

Step 4. Find TA(max) from equation (31.
TA(max) = 108 - (0.85)(40)

ambient temperature at which thermal runaway occurs or where
TJ ::: 125 0 C, when forward power is zero. The transition from one
boundary condition to the other is evident on the curves of
Figures 1,2, and 3 as a difference in the rate of change of the

= 740 C.

**Values given are for the 1 N5821. Power is slightly lower for the
1N5820 because of its lower forward voltage, and higher for the
1N5822. Variations will be similar for the MBR·prefix devices,
using PF(AV) from Figure 7.

TABLE 1 - VALUES FOR FACTOR F

Circuit
Load

Resistive

Sine Wave

0.5

Square Wave

0.75

*Note that VR{PK)
FIGURE 1 -

12.

I Capacitive"
J

1

~ 2.0

Full Wave,

Full Wava,
Bridge

HalfWava

I

Resistive

1.3

0.5

1.5

0.75

Center Tapped* t

Capacitive

Resistive

0.65

1.0

0.75

1.5

j

I

FIGURE 2 -

12.

i'- ......... ~
""- >-..

I--

ROJA ('CIWI " 70

50

V

/B.O
....... r-.~ ~ f--::-::-

>'X

i'[:')
~

404
2B

,~

~

,,,,,,- '"
r-...''"'"" ""
"-..

X' >--'"'"
""'- r--....
"-

5

"

75
2.0

3.0

4.0

5.0

7.0

r......"-..

15

10

1 NS822

5t:::;:::

f1
;;:; 115
=
::>
~

"'"

=105

::- ......
:-.;::: t:--..
"- ...... '

;;::::-

~

...i'li

w
u

ffi

/

""""

~ 115

~

r:::: ~
t::-.::::: ::--...
.........

~

::>

~
i'li

....w
u

105

ROJA (OCIWI

=

$

I~
'"'" ""'~"1.
X.
40

...':: 85
75
4.0

2B
5.0

7.0

"-.. r--....

r--....,"",

50'

10

>--.. ./ ~I'- ."'..... r-............... "- :--..

w
=
...'"

"

I"

85

"'-

5.0

7.0

10

15

~

~B

'"

30

['0...

FIGURE 4 -

I'..

20

30

STEADY-STATE THERMAL RESISTANCE

---- MA~IMUM_

1_ _
1

5

~

TYPICAL

--

/

~

5

5.0

1'\40

~ i'..

VR, REVERSE VOLTAGE (VOLTS)

"..,..-

r.. . .

"I"

"'"1""'
""
""'"

" ,

..
4.0

"

.......

~"-..

10

"" ""
20

"-..

28/

5

~
;o...:\. l~
~ I~ I'...
~ I\. '\.

15

1'-..""'- '""""

..... ~

40/

95

~
~

-....X r....."'"

r>c

5b/

20

15

i'.. I'-..

VR, REVERSE VOLTAGE (VOLTS)

3-50

7q

20

r......'<

ROJA ('CIW) • 70
95

MAXIMUM REFERENCE TEMPERATURE
1 NS821

40

r--.....~ ~
~~

'" ,

1.5

/20

-..;:

VR. REVERSE VOLTAGE (VOLTS)
FIGURE 3 - MAXIMUM REFERENCE TEMPERATURE

12

1.3

I

V 15 '~O-t.I' ~ t---L 1O B.O
............ ............ t'.....
r-.... -......: :--.. I"'-r-. ~

15

20

r---::~t::::::--:::--:--

Capacitive

Vin(PK)' tUse hne to center tap voltage for Vin.

MAXIMUM REFERENCE TEMPERATURE
1NS820

~

I
I

.....-V

V
........

~ ....

--- -

./"" ....

.... -~

...

Both leads to Heat Sink,_
Equal Lt ngth

liB

,~

2/B

3/8

4/B

5/B

6/B

I
7/8

1.0

L, LEAO LENGTH (INCHES)

Rectifier Device Data

1 N5820 thru 1 N5822

FIGURE 5 - THERMAL RESPONSE
I. 0

;::-'=':"Ppk

Ppk

O. 5 ...... ~

-'
3-

~

---l
II

LEAD LENGTH· 114"

DUTY CYCLE - Iplll

PEAK POWER, Ppk. is peak of an
TIME equivalent square power pulse.

.......

1 - ATJL. Ppk. ROJL 10 + 11 - 0) • ,III + Ip) + 'lIp) - ,11111
whers:

1

= D. TJL "'tile increase injunction temperature above the

'"

~Ieadtemperature.
rlt) ;:: normalized value of transient thermal resistance
5-attime,t, i.e.:
3 tlt1 + tpl == normalized value of
translentthermalres'stan~

=

0.0 I
0.1

0.5

10

10

50

FIGURE 6 - FORWARO POWER DISSIPATION
lN5820-22

i

~

'"o

;::

10
7. 0
5. 0

SmeWave

11~1;:: rr

0

IAV)

;.<;

~ 2. 0

1. 0

Loads

O. 7
~ O. 5

O. 3

'":> o.1

f

O. I

0.1

//
0.3

0.7

20

1.0

500

1.0k

1=
ff-

I I I II

IJ I L I JLI I
10k
5.0 k

I IIII
10 k

10k

Im~

NOTE 3 - APPROXIMATE THERMAL CIRCUIT MOOEL

Square~ave

TJ,115'C
1 I

~

'i: ~V'0.5

0.2

F
f=

de

'l/

20·

r",

~~~~let~OI~:eti~ep~~~~tis ~:~~~~~~:~~a:~::9nh::

/

V...-( ~ ~

..1_1 \5.0
CapaC1t1ve
10

~

~>

"'"
rr k(~ ~
/

c;

~

(ReSlSt .....e Load)

100

100

I, TIME

Ui

f-

-r'i"i'j ifYb,;":~mi:'~~Y:

5.0

1.0

1.0

I II Illl

I IIII

I

=

The temperature of the lead should be measured
using a thermocouple placed on the lead as close as
so that it will not significanlly respond to heat
surges generated in the diode as a result of pulsed
operation once steady-state conditions are achieved.
Using the measured value of Tlo the junction tern·

2_alljmet1+1p~

.J.....n'"1 I III

....

30

50

70

10

IFIAV).AVERAGE FORWARD CURRENT lAMP)

Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For a given
total lead length, lowest values occur when one side of the rectifier
is brought as close as possible to the heat sink. Terms in the model
signify:
TA ;::: Ambient Temperature
TC == Case Temperature
TL;::: Lead Temperature
TJ;::: Junction Temperature
Res = Thermal Resistance, Heat Sink to Ambient
Re L == Thermal Resistance, Lead to Heat Sink
RO J = Thermal Resistance, Junction to Case
PD == Total Power Diss~pation = PF + PR
PF :: Forward Power Dissipation
PR ::: Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides, respectively.) Values for thermal resistance components are:
RO L= 42 0 C/W/in 1Ypieally and 4SoC/W/in maximum
ROJ = lOo CIW 1Ypically and 16°C/W maximum
The maximum lead temperature may be found as follows:
TL

=TJlmax)

- ATJL

where aTJL ~ ROJL - Po

Mounting Method 1
P.C. Board where
available copper surface
issmalJ.

NOTE 2 - MOUNTING DATA
Data shown for thermal resistance junction-ta-ambient (RaJA)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
Mounting
Meth ...

Lead Length, L lin}
1/8

50

1/0
51

58

59

Rectifier Device Data

..

1/.
53

61

t'-j
t-'j
rr===c::=J=====

J/,;~;U

Mounting Method 2
Vector Push-In
Terminals T -28

TYPICAL VALUES FOR R"JA IN STILL AIR
3/0

RUA

55
63

'elW
°elW
'elW

Mounting Method 3
P.C. Board with
with 2-1/2" X 2-1/2"

~

copper surface.

~
:

JII

L ""

1/c;I:2"

Board Ground

p~ano

3-51

•

1 N5820 thru 1 N5822

FIGURE 9 - MAXIMUM NON·REPETITIVE SURGE CURRENT
100

FIGURE 8 - TYPICAL FORWARD VOLTAGE
0

/

0
0

~

5

I-

t-TJ = 100 0 C

10

ffi

7. 0

'"'"~

5. 0

I-

/

0

..........

ill
~

G

7/

..........

0

3. 0

~
'"'"~

.

TL=7~oC

30 -

f=60Hz

20 r--

:i:
z

I.

z

'/

;:!:

1.0

r-.....r--

1\ f\ f\

r-- ~~lCvcle

Surg~ APih.J at IR~Ie~ l!'d Co~di"ons

\

If

r---.. ..........

w

>

ff
j

~
~ 2. 0

~

-k

/

//

~

~

f--'

i--

V

'1 '1 I 11111

10
1.0

\

2.0

3.0

,.0

7.0

II

10

20

3D

~O

70 100

NUMBER OF CYCLES

:::::::

2~oC

FIGURE 10 - TYPICAL REVERSE CURRENT

;!;

.~ O. 7
O. ~

O. 3
O. 2

I

I

,-

.1
0.0 7
~

0.000.10.20.3 0.4

O~

060.7 O.B

09101.1

1.2

1.31.4

vF.1NSTANTANEOUS FORWARD VOLTAGE (VOLTS)

FIGURE 11 - TYPICAL CAPACITANCE

,DO

r~ 300

~

«
I-

-

-..... r- ..........

lN~B20

" ""- >-

200
TJ = 2,oC
f= 1.0 MHz

U

::;:;

IN,B21

c3 100

NOTE 4 - HIGH FREQUENCY OPERATION

" "-

IN,82P

70
O.~

3-52

"\

"-

Since current flow in a Schottky rectifier is the result of
majority carrier conduction. it is not slJbject to junction diode
forward and reverse recovery transients due to minority carrier
injection and stored charge. Satisfactory circuit analysis work
may be performed by using a model consistillg of an ideal diode
in parallel with a variable capacitance. (See Figure 11.)

0.7

10

2.0 3.0
5.0 7.0 10
VR. REVERSE VOLTAGE (VOLTS)

20

30

Rectifier Device Data

MBR320 MBR340
MBR330 MBR350
MBR360

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

•

MBR340 and MBR360 are
Motorola Preferred Devices

Axial Lead Rectifiers
· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters,
free wheeling diodes, and polarity protection diodes.
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS

Extremely Low vF
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction

3.0 AMPERES

ZO, 3D, 40, 50, 60 VOLTS

•

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220'C Max. for
10 Seconds, 1/16" from case
• Shipped in plastiC bags, 5,000 per bag.
• Available Tape and Reeled, 1500 per reel, by adding a "RL" suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: B320, B330, B340, B350, B360
CASEZ67-03
PLASTIC

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified FOlWard Current
TA = 65·C
(R8JA = 28·CIW, P.C. Board Mounting,
see Note 3)
Nonrepetitive Peak Surg'e Current (2)
(Surge applied at rated load conditions, half wave,
single phase 60 Hz, TL = 75·C)
Operating and Storage Junction
Temperature Range (Reverse Voltage applied)
Peak Operating Junction Temperature
(FolWard Current Applied)

Symbol

MBR320

MBR330

MBR340

MBR350

MBR360

Unit

VRRM
VRWM
VR

20

30

40

50

60

V

10

3.0

A

IFSM

80

A

TJ, Tstg

-65 to 150·C

·C

TJ(pk)

150

·C

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient, (see Note 3. Mounting Method 3)
ELECTRICAL CHARACTERISTICS (TL

Characteristic

=

25'C unless othelWise noted )(2)
Symbol

Maximum Instantaneous
FOlWard Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)

vF

Maximum Instantaneous
Reverse Current @ Rated
dc Voltage (1)
TL = 25'C
TL = 100'C

iR

MBR320

I

MBR330

I

MBR340

MBR350

I

MBR360

Unit
V

0.500
0.600
0.850

0.600
0.740
1.080
mA

0.60
20

(1) Pulse Test: Pulse Width = 300 /'S. Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32" from case.

Rsv1

Rectifier Device Data

3-53

MBR320, MBR330, MBR340, MBR350, MBR360

MBR320, 330 AND 340
FIGURE 2 - TYPICAL REVERSE CURRENT·

FIGURE 1 - TYPICAL FORWARD VOLTAGE
0

100
40
20
10

1/ V V

J '/ V

0

iIi ~:~1.0 l -

7.0

I

5.0

•

/

U~

0.4
0.2
II! 0.1
1!1 0.04
Iii! 0.02
S. 0.01
0.004
0.002
0.00 I 0

/1 /

'/

3.0

/ 1//

2.0

I

TJ = ISO'.

/

Ii 1.0

f25c

II /

i It"

15O'C

100';.

Ie C
i---

I00

,

I

I I

~ 0.3

I I

~ 0.2

FIGURE 3 - CURRENT DERATING
(MOUNTING METHOD #3 PER NOTE 3)

I I II

~
~

10

I I

.!:? O. I

~S B.O
!i

0.07
0.05

a!l§ 6.0

0.03

~

~

!...

0.02

0.01

I

~

~

U

U

~

U

~

~

.........
4.0

.........
Squar;,'-.
Wave

2.0

~

M

jI,

20

40

Square
Resistive Load Wave/

0

fi

=

ICapaettye Loadl- IAV

~\.,5.0

5

"

)/ /

0

/ /~
.IVA: ~

'/

'11'

~/

dC/

~

/'

o\

~200

./

m m

'\.
~

~

~

~

~

~

TJ = 150'C

1.0
2.0
3.0
4.0
IF IAV), AVERAGE FORWARD CURRENT lAMPS)

TJ = 2S'C

\

\
~

!il

l5_'O90O

"-.........

100

u80
70

~~~

3-54

'\I

500
400

/

/

~

"'- I'\.

~ de

FIGURE 5 - TYPICAL CAPACITANCE

FIGURE 4 - POWER DISSIPATION

2.5

~

"" r--...

TA< AMBIENT TEMPERATURE I'CI

vF, INSTANTANEOUS VOLTAGE IVOLTS)

5

1

20
~
40
VR REVERSE VOLTAGE IVOLTS)
'The curvell shown are typical for the highellt voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from
thelle same curves ij VR is sufficiently below rated VR.
W

0.7

I

1

'-

5

~ O. 5

I000

75'C

~

5.0

50 0

10

20
~
VR REVERSE VOLTAGE IVOLTS)

40

50

Rectifier Device Data

MBR320, MBR330, MBR340, MBR350, MBR360

MBR350 AND 360
FIGURE 7 - TYPICAL REVERSE CURRENT*

FIGURE 6 - TYPICAL FORWARD VOLTAGE
0

joooc~ K!c_

TJ =

)V

0

7.0

~ 2.0

§a 1.0
0.5

l00°C7SoC-

0.20
0.1 0
12 0.05
~

h'I
'I,
VI

~

~

~::>

2. 0
I.0
0.50

u

;/

3.0

0.7

I-

,/I /

TJ - 1SD'C--::

10

<
..s

/

5.0

~

/

V~ I-

o

'The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from
these same curves if VR is sufficiently below rated VR.
2SoC=

~

0.02
S. 0.0 I
0.005
0.002
0

2D

FIGURE 8 - CURRENT DERAnNG AMBIENT
(MOUNnNG METHOD #3 PER NOTE 3)

~

~ 0.3

5.0

;!:
'" 0.2
ii!i
.!:?

0

" '\.

z

Rated VR
RWA = 28"C/W

'\
'\..

0

0.1

\.de

\.

Square

'\!,ave

0.07

\

0

I\,

0.05

0.03
0.02 0

0

L
0.2

1.2

a:

3.0

200

TJ = lJ'C

Square
Wav

o

./

2.0

./ ./

f2
:l(

~ 00
;F

./'"

V ..........

V ..... V

k:::::::::V

2.0

l!l
z

;!: 100

\

4.0

5.0

I

'\
.......

50
40
3.0

160

TJ = 2S'C

c..i

IFIAV). AVERAGE FORWARD CURRENT lAMPS)

Rectifier Device Data

~

I

\

<3 70

.,...~ ....

1.0

140

80

\

~

dc

l,./:V

III 1.0

~

\.

120
100
TAo AMBIENT TEMPERATURE 1°C)
60

FIGURE 10 - TYPICAL CAPACITANCE

~

=
~
!

40

20

1.4

300

z
a

4.0

\.

TJ = 1511"C

\.

0.4
0.6
0.8
1.0
VF.INSTANTANEOUS VOLTAGE IVOLTS)

5.0

~

~

'\.

FIGURE 9 - POWER DISSIPATION

~

80

60

40
50
30
VR. REVERSE VOLTAGE (VOLTS)

10

10

..........

-

20
3D
VR. REVERSE VOLTAGE (VOLTS)

40

50

3-55

•

MBR320, MBR330, MBR340, MBR350, MBR360

NOTE 3 - MOUNTING DATA

Data shown for thermal resistance iunction-toambient (R9JAI for the mountings shown is to be used
as typical guideline values for preliminary engineering,
or in case the tie point temperature cannot /le measured.
TYPICAL VALUES FOR R/lJA IN STILL AIR

•

Lead Length, L (In)

Mounting
Method

1/8

114

112

314

1

50

51

53

55

2

58

58

61

63

3

28

R/lJA
°CIW
°CIW
"CIW

Mounting Method 1
P.C. Board where

available copper surface
is small.

Mounting Method 2
Vector Push-In

Terminals T-28

Mounting Method 3
P.C. Board with

2-112" x 2-112"
copper surface.

~'iq:
Board Ground Plane

3-56

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MBR370
MBR380
MBR390
MBR3100

Axial Lead Rectifiers
· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free
wheeling diodes, and polarity protection diodes.
•
•
•
•
•
•
•
•

MBR3100 Is a
Motorola Preferred Device

Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard-Ring for Stress Protection
Low Forward Voltage
150'C Operating Junction Temperature
High Surge Capacity

SCHOTTKY BARRIER
RECTIFIERS
3 AMPERES
70,80,90, 100 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220'C Max. for
10 Seconds, 1/16" from case
'
• Shipped in plastic bags, 5,000 per bag.
• Available Tape and Reeled, 1500 per reel, by adding a "RL" suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 8370, 8380, 8390, 83100

CASE 267-03
PLASTIC

MAXIMUM RATINGS
Rating

Symbol

Peak Aepetitive Aeverse Voltage
Working Peak Aeverse Voltage
DC Blocking Voltage

VA AM
VAWM
VA

Average Aectified Forward Current
TA = 100'C
(AOJA = 28'CIW, P.C. Board Mounting, see Note 1)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, half-wave, single phase, 60 Hz)
Operating and Storage Junction Temperature Aange
(Aeverse Voltage applied)
Voltage Aate of Change (Aated VA)

MBR370 MBR380 MBR390 MBR3100
70

80

90

100

Unit
V

10

3

A

IFSM

150

A

TJ, Tstg

-65 to

+ 150

'c

dv/dt

10

Symbol

Max

Unit

AOJA

28

'CIW

Symbol

Max

Unit

Vlns

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(see Note I, Mounting Method 3)
ELECTRICAL CHARACTERISTICS

(TL

= 25'C unless otherwise noted)

Characteristic
Maximum Instantaneous Forward Voltage*

0.79
0.69

(iF = 3 Amps, TL = 25'C)
(iF = 3 Amps, TL = 100'C)
Maximum Instantaneous Aeverse Current (it Aated de Voltage<
(TL = 25'C)
(TL = 100'C)
*Pulse Test: Pulse Width

=

300 J.LS, Duty Cycle

V

vF

~

rnA

iA
0.6
20

2.0%.

Rev 1

Rectifier Device Data

3-57

•

MBR370, MBR380, MBR390, MBR3100

50

~ 30
~ 20

!Z

:l!
a:

0

-

15O"C.....
10
25i

a

~

12

I

o.!

v
I-TJ

0.2·==.,TJ = l5O"C

/

0.1
0.05
0.02
0.01

"-

iOO'C

1

~ 0.5

u.uu<

I~

0.001
n.1
nnnn,
0.0001 0

I

1

.!f 0.05

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
VF. INSTANTANEOUS VOLTAGE (VOLTS!

10

Figure 1. Typical Forward Voltage

20

70
30
40
50
60
.VR. REVERSE VOLTAGE (VOLTS!

0

lO

Figure 2. Typical Reverse Current*
"'The curves shown are typical forthe highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VA is sufficiently below rat~d VR.

-

..........

" I"'"

"

S
;;.
~
in

~

~

~dc

~tll

SQUARE WAV~I'\.

~

1

20

40

3.5

./

z

0

0

2.5

SQUARE WAVE

/~

1.5

«

ffi

~

.......-:: ~

:i(

-'- 0.5

~

60
80
100 120 140
TA. AMBIENT TEMPERATURE (OC!

:i(

160

~

180

/' ./
~ -

~V

f.-;::::: ;:::::--r-1

2

4

IFlAV). AVERAGE FORWARD CU~RENT (AMPS)

Figure 3. Current Derating
(Mounting method 3 per note 1.)

Figure 4. Power Dissipation

400
300

~ 200

\

~

u

z

;:!:
u

'"

rf 100

<5

u

80

50
40

\

o

TJ = 25°C
f 1 MHz

.........

20

-

--

40
60
VR. REVERSE VOLTAGE (VOLTS!

80

-

Figure 5. Typical Capacitance

3-58

Rectifier Device Data

MBR370, MBR380, MBR390, MBR3100

NOTE 1 - MOUNTING DATA:
Data shown for thermal resistance junction-to-ambient (R9JA)
for the mountings shown is to be used as typical guideline values
for preliminary engineering or in case the tie point temperature
cannot be measured.
Typical Values for R9JA in Still Air
Lead Length, L lin)

Mounting
Method

1/8

1

50

2

5B

1/4

1/2

3/4

51

53

55

59

61

63

2B

3

R9JA

oem
oem
oem

Mounting Method 1
P.C. Board where
available copper surface
is small.

Mounting Method 2
Vector Push-In
Terminals T-2B

~
l

l

Mounting Method 3
P.C. Board with
2-112" x 2-112"
copper surface.

~'Jq:
BOARD GROUND PLANE

Rectifier Device Data

3-59

IN5823, IN5824
IN5825

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

t N5823 and 1N5825 are
Motorola Preferred Devices

Designer's Data Sheet

SCHOTTKY BARRIER
RECTIFIERS

Power Rectifiers
· .. employing the SchoHky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide
passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage,
high-frequency inverters, free-wheeling diodes, and polarity-protection diodes.
• Extremely Low vF
• Low Power Loss/High Efficiency

5 AMPERE

20.30.40 VOLTS

• Low Stored Charge, Majority
Carrier Conduction

Mechanical Characteristics:
• Case: Welded steel, hermetically sealed
• Weight: 2.4 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Polarity: Cathode to Case
• Shipped 50 units per tray
• Marking: 1N5823, 1N5824, 1N5825

CASE 60-01
METAL

'MAXIMUM RATINGS
Symbol

lN5823

lN5824

lN5825

Unit

VRRM
VRWM
VR

20

30

40

Volts

Non-Repetitive Peak Reverse Voltage

VRSM

24

36

48

Volts

RMS Reverse Voltage

VR(RMS)

14

21

28

Volts

Average Rectified Forward Current

10

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC 810eking Voltage

VR(equiv)';; 0.2 VR (de), TC = 75°C
VR(equiv)';; 0.2 VR (de), TL = 80°C
R8JA = 25°C/W, P.C. Board
Mounting, See Note 3)

.

Ambient Temperature
Rated VR (de), PF(AV) = 0
R8JA = 25°C/W

TA

Non-Repetitive' Peak Surge Current
(Surge applied at rated load conditions,
hallwave, single phase 60 Hz)

IFSM

•

Operating and Storage Junction Temperature Range
(Reverse Voltage applied)

TJ, Tstg

Peak Operating Junction Temperature

TJ(pk)

.
.

15
5.0

Amp

°C
65

(Forward Current Applied)

..

60

55

500 (lor 1 cycle)

-65 to +125

.
.
..

150

Amp

°C
°C

'THERMAL CHARACTERISTICS

Characteristic
Thermal Resistance, Junction to Case

Max

Unit

3.0

°C/W

'ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Maximum Instantaneous Forward Voltage (1)
(iF = 3.0 Amp)
(iF = 5.0 Amp)
(iF= 15.7 Amp)

vF

Maximum Instantaneous Reverse Current
@ rated de Voltage

iR

TC= 25°C
TC= 100°C
(1) Pulse Test: Pulse W,dth = 300 "s, Duty Cycle = 2.0%

lN5823

lN5824

lN5825

Unit
Volts

0.330
0.360
0.470

0.340
0.370
0.490

0.350
0.380
0.520
mA

10
100

10
125

10
150

"IndIcates JEDEC RegIstered Data lor 1N6823-1 N5825

Rev 1

3-60

Rectifier Device'Data

•

1N5823,1N5824,1N5825

NOTE 1: DETERMINING MAXIMUM RATINGS
3 as a difference in the rate of change of the slope in the vicinity

Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use

of equation (1):
TAlmax) = TJlmax)- RSJA PFIAV) - RSJAPRIAV)

of 1150 C_ The data of Figures 1. 2 and 3 is based upon de conditions. For use in common rectifier circuits, Table I indicates suit
gested factors for an equivalent dc voltage to use for conservative
design; Le.:

(1)

where

VRlequiv) = VINIPK) x F
T A(max)

=

Maximum allowable ambient temperature

(4)

The Factor F is derived by considnring the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.

T J(max) = Maximum allowable junction temperature

11250 C or the temperature at which ther-

Example:

mal runaway occurs, whichever is lowest).

Find TAlmax) for lN5825 operated in a 12-Volt dc

supply using a bridge circuit with capacitive filter such that IOC =

PFIAV) = Average forward power dissipation

10 A IIFIAV) = 5 A). IIPK)/IIAV)
Vlrmsl. RSJA = 100 C/W_

PRIAV) = Average reverse power dissipation

Step 1:

R8JA = Junction-to·ambient thermal resistance

Find VRlequiv). Read F = 0.65 from Table I :VRlequiv) = 11.411110110_651 = 9_2 V
Find TR from Figure 3_ Read TR = 1130C@ VR =
9_2 V & RSJA - 100 C/W_
Find PFIAV) trom Figure 4_ "Read PFIAV) = 5_5 W
IIPK)
@IIAVi'O & IFrAVI = 5 A

Figures 1. 2 and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature 85 determined bV

Step 2:

equation (2):
TR = T Jlmax) - RSJA PRIAV)

Step 3:

(2)

Substituting equation (21 into equation (11 yields:

TAlmax) = TR - RSJA PFIAV)
(3)
Inspection of equations (2) and (3) reveals that TR is the ambient
temperatu re at which thermal runaway occurs or where T J = 12SoC,
whan forward power is zero. The transition from one boundary
condition to the other is evident on the curves of Figures 1. 2 and

= 10. Input Voltage = 10

Find!AIw,ax) from equation (3). TAlmax)= 113-(10)
15_5)- 58 C_

Step 4:

"Value given are for the lN5825. Power is slightly lower far the
other units because of their lower forward voltage.

TABLE I - VALUES FOR FACTOR F
Half Wave

Circuit

Load

Resistive

I

Capacitive-

Resistive

Sine Wave

0.5
0.75

I

1.3

I

1.5

0.5
0_75

Square Wave

i
w

t--.

0:

IDS

_ 9S
~

I-

~

-.........: -.......: ["'-0..:-" .......

:--.

:-"

7S

{!

65

""".........
t'....

201lS 10'

j'
3_0

4.0
S.O
7.0
10
VR. REVERSE VOLTAGE IVOLTS)

.........

~ 115
w

0:

::>

... lOS

I-

~
~

:::--; :::...: :---; I:::"~ ::--..; -.....; t--.
........... ::-- ;:-.

9S

I-

w
'-'

8S

"'

65

~

I-

r-....

1::::3= ~

7S

SS
4.0

I""-.

"

...

IS

r-....
'.

60
so
40

Capacitive

I

.....:<

=" ="

:-"

ROJA ,oC1W1 = 71i'-

85

~

J-;-;;--

r-.... r~ r-...... .......

I

Canter Tapped *t

tUse line to center tap voltage for Vin.

'Note that VRIPK)..,2 VinIPK)

FIGURE 1 - MAXIMUM REFERENCE TEMPERATURE - lN5B23
12S
7.0 S
L" • 4.0
3.0
~115

~~~ ......"
...........

FuIlW....

Full Wa.a. Bridge

'- 1'..'30~ :....40
IFIAV). AVERAGE FORWARD CURRENT

3-61

•

I

1N5823,1N5824,1N5825

THERMAL CHARACTERISTICS
FIGURE 5 - THERMAL RESPONSE
1.0
0.1
o.5

:!l

;

0.3

~

O. 2

~ ~

o. 1

a
=~
......

_...

...... ~

J1:JL

'p

:: :1§ 0.01

f5

~
'"

~

"

ZeJCIU" RUC • ~.I

~ 005

t. TJC' Ppk·

,

0.03
0.02

DUTY CYCLE. 0" 'p/'l
PEAK POWER, Ppk. 15 peak of an

Pk

-

1 - 1 1 -1

TIME

equ lValent ,SQuare power pulse

R'JC 10 '11 - 01· rill "pl' rl'pl-rllll!

where

Il TJC '" the Increase 10 junction temperature above the case temperature
r(t) = normalized value 01 transient thermal resistance al time, I, from Figure 5, i.e.:
rlq + Ipl = normalized value 01 tranSient thermal resistance all;me. t1 + tp.

0.0 I
0.5

1.0

2.0

5.0

10

20

50

100
200
'. TIME (m~

500

1.0k

NOTE 2 - FINDING JUNCTION TEMPERATURE

RSL
Pk.

,

TlM[

LEAD LENGTH. L (INI

To determine max'mum JunCllon temperature ollhe diode In a given $ltuallOn,
IS

recommended

Thetrmperature 01 the case should be measured uSing a Ihermocaupie placed
an the case at the temperature relerenu pomt (see Note 31 The therrnat man
connecled to the case IS normall't Idrg! enough so thaI II Will not srgnlhcantly
rupondloheatsurgugenerdledrnthedrodeasaresullolpulsedoperdlronance
sleady sfalecondrlronsareachleved USlIIglhe l11easurellvalueal TC thelunctron
lemperalurema'tbedetermrnedby
TJ=TC+ TJC
whele TJClSlhelOtreaSfrl"lunClrontemperaluredbovethpCilselemller,lIure
II may be determrned by
.
ATJC" Ppk 'ROJC

ID + (1. DI

50k

TYPICAL VALUES FOR ROJA IN STILL AIR

@qlllvalenltquarepowerpuise

1----11---1
the followln9 procedure

20k

NOTE 3 - MOUNTING DATA

DUTY CYCLE, 0 " Ip 11
PEAK POWER, Ppk,lspe,ak at an

'

10k

Data shown for thermal resistance junction-tO-ambient
(R6JA) for the mountings shown is to be used as typical
guidf'!hne values for prelimInary engineering.

Ppk

Ip _

5.0 k

2.0 k

. r(I1 + tpl + rUpl

dl1l1

wherr
rill = normairrrdvatueollfallslrnllhelm.llrtslSlanceallrme,I,lromFrguIe

5"
rill'" Ipl = nOrmalrl!dvalueollldnSlenllhermalresrslarrreallrmell"1'

MOUNT.NG
METHOD

114

1

ROJA

i

55

60

°C/W

2

65

70

°C/W

3

°C/W

25

MOUNTING METHOD 1

MOUNTING METHOD 3

~

P. C. Board With
2 112" x 2 112" copppr' surface

MOUNTING METHOD 2

~

g:

Vector pin mounting

Board Ground
Plane

FIGURE 6 - APPROXIMATE THERMAL CIRCUIT MODEL
ROCA

100 C/W
ROLA
ROSA

40 0 C/WilN
ROLK
40 0 C/W/IN

ROSK
TAK"='"

Use of the above model permits calculation of average
junctiOn temperature for any mounting sltuation_ Lowest
values of thermal resistance will occur 'when the cathode
lead Is brought as close as possible to a heat dissipator; as
heat conduction through the anode lead is small. Terms
In the model are defined as follows:
• C ••• temperature reference
f. at cathode end.

3-62

TA

-=-

TEMPERATURES

THERMAL RESISTANCES

TA'" Ambient
T AA = Anode Heat Sink Ambient
T AK :. Cathode Heat Sink Ambient
T LA = Anode Lead
T LK = Cathode Lead
T J = Junction

ReCA = Case to Ambient
R6SA = Anode Lead Heat Sink to Ambient
Fl6SK .,. Cathode Lead Heat Sink to Ambient
Fie LA = Anode Lead
Fie LK = Cathode Lead
ReeL. =Case to Cathode Lead
ReJC ... Junction to Case
ReJA = Junction to Anode Lead (S bend)

Rectifier Device Data

1N5823,1N5824,1N5825

FIGURE 7 - TYPICAL FORWARD VOLTAGE

/
Te'250~

V

10 0
70

,/

50

FIGURE 8 - MAXIMUM SURGE CAPABILITY

....
..... .....

200

/

loooe

'"
~
'"'"'"

............
............

300

~

.....
t--.

200

...........

~

.........
r"--i'

100
1.0

II

10

u

500

~

0-

~
=>

tween each cycle 01 surge.
f· 60 H.

>

I

~ 20

700

0-

w

V

30

Prior to surge, the rectifier is operated such
thai TJ '" JOOoC; VRRM may be applied be·

~

'5-"
~

13

1/

~

1000

20

:i1

5.0

10

20

50

100

NUMBER OF CYCLES

~ 7.0
~

en 5.0

J

=>

ffi

~ 3.0

z

~~

FIGURE 9 - TYPICAL REVERSE CURRENT

I

z

II

2.0

.s"
0-

~
~

1.0

13

07

w

'"w'"
~

05

0.3
0.2

o

TJ'1250e _

100

II

.~

-- .... - .--

200

'"

u

50

!--- loooe
20

=== 750e
5.0
10

20
10

.....

-

-- -

I--

-

l-""

25 0e

-

05

-

IN5823 - 20 V
IN5824 - 30 V
IN5825 - 40 V

0.2

04
0.6
08
10
12
0.2
'F. INSTANTANEOUS FORWARO VOL TAGE (VOLTS)

14

o

40

8.0

12
16
20
24
28
VR. REVERSE VOLTAGE (VOLTS)

32

36

40

FIGURE 10 - CAPACITANCE
2500
2000
1500

~
w
u

z

NOTE 4 - HIGH FREQUENCY OPERATION

~ ......

:::: .........

......
~

1000

,

lN5823

<

700

u'

500

§

-

lN5824

400
300
250
0.04 0.06 O. I

carrier conduction, it is not subject to junction diode forward and

reverse recovery transients due to minority carrier injection and

0-

U

Since current flow in a Schottky rectifier is the result of majority

TJ·25 0C

lN6823 - 20 V
lN5824 - 30 V
lN5825 -; V

lN5825

IIIIIII

I II

1P

0.2

II

~

0.4 0.6 1.0
2.0
4.0 6.0 10
VR. REVERSE VOLTAGE (VOLTS)

Rectifier Device Data

I\~
20

40

stored charge. Satisfactory circuit analysis work may be performed
by using a model consisting of an ideal diode in parallel with a
variable capacitance. (See Figure 10),
Rectification efficiency measurements show that operation will
be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency is approximately 70 per cent at
2.0 MHz, e.g., the ratio of dc power to RMS power m the load is
0.28 at this frequency, whereas perfect rectification would yield
0.406 for sine wave inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow through the
diode capacitance, which lowers the dc output voltage.

3-63

MOTOROLA

-

•

MBR1535CT
MBR1545CT

SEMICONDUCTOR

TECHNICAL DATA

MBRl545CT I. a
Motorola Preferred Device

Switchmode .Power Rectifiers
· .. using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art
devices have the following features:
•
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS

Center-Tap Configuration
Guardring for Stress Protection
Low Forward Voltage
150·C Operating Junction Temperature
Guaranteed Reverse Avalanche
EpoXy Meets UL94, VO at 118"

15 AMPERES
35 and 45 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260·C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B1535, B1545

4

CASE 221 A-06
TO-220AB
PLASTIC

MAXIMUM RATINGS
Symbol

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage

DC Blocking Voltage
Average Rectified Forward Current

TC = 105°C (Rated VR)
Peak Repetitive Forward Current. T C = 10Soe

Per Diode
Per Device

MBR1535CT

MBR1545CT·

Unit

Volts

VRRM
VRWM
VR

35

45

IF(AV)

7.5
15

7.5
15

Amps

IFRM

15

15

Amps

IFSM

150

150

Amps

IRRM

1.0

1.0

Amps
°C

(Rated VR, Square Wave, 20 kHz) Per Diode
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave.

Single phase, 60 Hz)
Peak Repetitive Reverse Surge Current

(2.0 pS, 1.0 kHzl
TJ

-65 to +150

-65 to +150

Storage Temperature

Tst~

-65 to +175

-65 to +175

·C

Voltage Rate of Change (Rated VRI

dvldt

1000

10000

Vips

Operating Junction Temperature

THERMAL CHARACTERISTICS PER DIODE
Maximum Thermal Resistance, Junction to Case

3.0

Maximum Thermal Resistance, Junction to Ambient

60

ELECTRICAL CHARACTEAISTICS PER DIODE
Maximum Instantaneous Forward Voltage (1)

Maximum Instantaneous Reverse Current( 1)

(Rated de Voltage, TC = 125°CI
(Rated de Voltage, TC = 25°C)
(1, Pulse Test: Pulse Width = 300

JlS,

Volts

vF

(iF = 7.5 Amp, TC = 125°C)
(iF= 15 Amp, TC= 125°CI
(iF = 15 Amp, TC = 25°C)

0.57
0.72
0.84

0.57
0.72
0.B4

15
0.1

15
0.1

rnA

iR

Duty Cycle:S:; 2.0%

Rev 1

3-64

Rectifier Device Data.

MBR1535CT, MBR1545CT

FIGURE 2 - TYPICAL REVERSE CURRENT

FIGURE 1 - TYPICAL FORWARD VOLTAGE

f"
::;;

50

:5- 30
!;;

~
a:

+J=

20

:::l

~ 10

~

f2

...12~oC / / V .......... ..... ~
l/.:: '/'

-

75°C

7.0
5.0

100
TJ = 150°C
10

125°C

«

.§.

100°C

!;; 1.0
II!
a:

75°C

:::l

~

./

~ 3.0

/ V/

ffi

z 2.0

1;:
:;, 0.01

II

~ 1.0

O.1

~ 0.7
.!f. 0.5

0.001

0.2

0.4
O.S
0.8
1.0
iF. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1.2

25°C

o

~

:::l

...

~

"""'~

12
10

~

I"'

50

FIGURE 4 - CURRENT DERATING. AMBIENT

..........

Rated Voltage Applied

. . . . i'...

r-....

.......

'"

6: 8.0

'"
:;cffi

40

16

16

~ 14
a:

20
30
VR. REVERSE VOLTAGE (VOLTS)

10

FIGURE 3 - CURRENT DERATING. CASE

!;;

-

'"
ffi

25°C

V/

~

f"

;--

180° Square Wave

s.o

,

R6JC = 3.0 0 C/W

14

>-

12

a:

~

~

~ 2.0

~ 0
110

'":5-

10

~

8.0

..........

.......

CI

"'-

5:! 6.0

"

~

~

~

'" I'."

130
120
TC. CASE TEMPERATURE (OC)

~

de

...
:::l

4.0

100

IL

15
a:
~e

Rated Voltage Applied

::;;

140

'"ffi

:;c

'"

~

150

0

o

IpK

12

10

CI

6.0

.., -'

~ 4.0
~

Rectifier Device Data

~
..........

2.0

~ 0

E

-~ ::::....
140

I~OOC
,..... Square
Wave

/L

//

IL

:;c

-- -

60
80
100
120
TA. AMBIENT TEMPERATURE (OC)

/"

de -

r--

A
W ./
.# . /

~ 8.0

'"co:ffi

40

20

..........
=11"

IAV

C;;;

i

~~
--- -\-- ... --- ~- ~

(Resistive Load)

C>

~
ffi

~ '-...

FIGURE 5 - POWER DISSIPATION
14

z

~

,

-_

--

~2.0

............

180° Square wavj\

f-'--

4.0

i'..

- - R6JA = ISOC/W
- - - R6JA = SooC/W
(No Heat Sink) -

/"

/"

~

~
2.0

0

4.0

6.0

IF(AV~

AVERAGE FORWARD CURRENT lAMPS)

8.0

10

12

14

16

18

20

3-65

160

•

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MBR2015CTL
MBR2030CTL

SWITCHMODE
Dual Schottky
Power Rectifiers

MBR2030CTL Is a
Motorola Preferred Device

· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching
power supplies, free wheeling diodes and polarity protection diodes.
•
•
•
•
•
•
•
•

Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C)
Matched Dual Die Construction (10 A per Leg or 20 A per Package)
High Junction Temperature Capability
High dvldt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL94, VO at 1/8"

SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
15 and 30 VOLTS

:::r

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily'
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B2015, B2030

2 4
.

CASE 221A-06
. TO-220AB

MAXIMUM RATINGS (Per Leg)
Svmbol

MBR2015CTL

MBR2030CTL

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

15

30

Volts

Average Rectified Forward Current

IF(AV)

10

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2.0 p.s, 1.0 kHz)

IRRM

1.0

Amp

TJ

-65to +150

°c

Storage Temperature

Tstg

-65 to + 175

°c

Voltage Rate of Change (Rated VRI

dv/dt

10000

Vlp.s

Rating

Operating Junction Temperature

THERMAL CHARACTERISTICS (Per Leg)
Thermal Resistance, Junction to Case

2.0

ELECTRICAL CHARACTERISTICS (Per Leg)
Maximum Instantaneous Forward Voltage (1)
(iF = 10 Amp, TC = 25°C)
(iF = 10 Amp, TC = 150°CI
(iF = 20 Amp, TC = 25°C)
(iF = 20 Amp, TC = 150°CI

vF

Maximum Instantaneous Reverse Current (1)
(Rated DC Voltage, TC = 25°CI
(Rated DC Voltage, TC = 100°C)
(Rated DC Voltage, TC = 125°C)

iR

Volts
0.52
0040
0.58
0.48
mA
5.0
40
75

(1) Pulse Test: Pulse Width - 5.0 ms, Duty Cycle.;; 10%.

Rev 2

3-66

Rectifier Device Data

MBR2015CTL, MBR2030CTL

-

100
100
0
0
E. 0

ff

1/

0

/V/

/iJ

0

l;j

0

~ 25°C

u

~

r~

150'C

II. /

0

1rJ

-

>-

~
::::>

~
~

~

'100°C

4
2
1

o. 4
O.2
o. 1

Ji: 0.04

I

II

2

,..-

2~

10
15
20
25
VR. REVERSE VOLTAGE IVOLTS)

30

35

I
16

I

I

1

100°C

Figure 2. Typical Reverse Current (Per Leg)

I

I

TJ

TJ

o

3

150°C

....-

0.02
0.0 1
5

TJ

:-- !--

«

VOLTA~E APPLl~O_

RATJD
ReJC

~ 14

~

2°C.W

~ 12
~

g§

o. 5

10

\

::::>
u

c

~~

o. 3

o. 2

o. 1

->-

j

o

I

I

0.2

0.4
0.6
0.8
1
vF. INSTANTANEOUS VOLTAGE (VOLTS)

1.2

1.4

I\dc

SQUAR~

4

WA~E

\

8

.~

"'-\

"

de'

o

120

TJ

\

20

" 1\

\
~

60

~

~

~

.~

m

~

~

TA. AMBIENT TEMPERATURE I'C)

Figure 4. Current Derating. Ambient

Rectifier Device Data

~1100'C-

~~h-' SQUARE WAVE

1\ ......

~

160

Figure 3. Current Derating. Case

\

1

150

TC. CASE TEMPERATURE I'C)

SINE WAVE

"'\

o
o

1~

130

\

, r'..\

\

RATED VOLTAGE APPLIED
- - ReJA ~ 16°CIW
- - - ReJA ~ 6O°CIW
INO HEATSINK)

l\dC

SQUARE WAVE

\

\

r\

Figure 1. Typical Forward Voltage (Per Leg)

9

'\

~

~

0

~~

)~ ~dC

~

~

4

6

8

10

12

14

IFIAVG). AVERAGE FORWARD CURRENT lAMPS}

Figure 5. Forward Power Dissipation

3-67

16

MBR2015CTL, MBR2030CTL

HIGH FREQUENCY ~PERATION
Since current flow in a Schottky rectifier is the result
of majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 6.)
Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield OA06 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative
of powe'r loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output voltage.

10K
5000

25'C
TJ
f
1 MHz

_ 3000

E. 2000
~

t--.

-.

z

~ 1000

U~

U

--

-r-.-

500
300
200
100
0.5

10
VR. REVERSE VOLTAGE IVOLTS)

20

30

50

Figure 6. Typical Capacitance

+ 150 V. 10 mAde
2k!l
VCC

12 Vde

r
+

12 V

100
2N2222

I--- 12p.'
kHz
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS

100
CARBON

Figure 7. Test Circuit for dv/dt and Reverse
Surge Current

3-6&

Rectifier Device Data

MBR2035CT
MBR2045CT

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

•

MBR2045CT Is a
Motorola Preferred Device

Switch mode Power Rectifiers
· .. using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art
devices have the following features:
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS

Guardring for Stress Protection
Low Forward Voltage
150a C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 1/8"

20 AMPERES

35 and 45 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B2035, B2045

4

CASE 221 A-OS
TO-220AB
PLASTIC

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage

DC Blocking Voltage
Average Rectified Forward Current (Rated VR)

Symbol

MBR2035CT

MBR2045CT

Unit

VRRM
VRWM
VR

35

45

Volts

IF(AVI

20

20

Amps

'FRM

20

20

Amps

'FsM

150

150

Amps

'RRM

1.0

1.0

Amps

T
Tstg

-65 to +150
-65 to +175

-65 to .150
-65 to.+175

°c
°C

dvldt

1000

10000

VII's

0.57
0.72
0.B4

0.57
0.72
0.84

15
0.1

15
0.1

TC=135°C
Peak Repetitive Forward Current Per Diode Leg

(Rated VR. Square Wave. 20 kHz) TC = 135°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave.

single phase. 60 Hz)
Peak Repetitive Reverse Surge Current

(2.0 I's. 1.0 kHz) See Fig ure 11
Operating Junction Temperature
Storage Temperature

Voltage Rate of Change (Rated VR)
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)

Maximum Instantaneous Reverse Current (1)

(Rated de Voltage. TC = 125°C)
(Rated de Voltage. TC = 25°C)

Volts

vF

(iF = 10 Amp. TC = 125°C)
(iF = 20 Amp. TC = 125°C)
(iF = 20 Amp. TC = 25°C)

rnA

iR

(1) Pulse Test: Pulse W,dth = 300 ps, Dutv Cycle ~ 2.0%

Rev 2

Rectifier Device Data

3-69

MBR2035CT, MBR2045CT

FIGURE 2 -TYPICAL FORWARD VOLTAGE

FIGURE 1 -MAXIMUM FORWARD VOLTAGE
100

100
70

y

/

50
TJ

30
20

V

/, l'i

in

~

//

=150°C

/

'l

1/1000C ......

......

70

./

50
TJ = 150°C

!/

30

/V;5 0 C

~

10

0-

70

is 70

:!l

50

'I
1//

~

""~

30

~

I 0

;;::
'"
of

05

~

/

z

t;;

;;:: 10
of
07
05

I

03

I

02

[I

«

I

03

20

z

07

02

01
02

0.4

1.0
1.2
Vf. INSTANTANEOUS VOLTAGE (VOLTS)

06

08

01

I

If

I

I

III
02

14

== =

-

10

~

125°C

5

100°C

15
g§ 100

0-

'"
'"
a

~

75°C_

~

01

c:;

~

'"

.$ 0.01

3-70

\

a

is 1.0

o

14

200
::;;

0-

0.001

I2
06
08
10
Vf. INSTANTANEOUS VOLTAGE IVOLTS)

~

TJ = 150°C

.§.

'"
ffi

0.4

FIGURE 4 - MAXIMUM SURGE CAPABILITY

FIGURE 3 - MAXIMUM REVERSE CURRENT
100

V'25 0 C

'/,'

~
~

/

/

/' /

~ 30

'"=>

./

rll

50

c

'"
«

III ~I
1
III

'"
=> 20
~

z
«
0z
«
0-

'"
El

V

~OOoy

~V

in
5

1/

V

/

0-

'"El'"

Al
VI

20

5

10

/

-/

".

70

..~

50

«

-

'" "......

:c

'"
~
:l;

t--

30
20

10

20
30
VR. REVERSE VOLTAGE (VOLTS)

40

50

-

1-1-

~

1.0

2.0

3.0

5.0 7.0 10
20 30
NUMBER Of CYCLES AT 60 Hz

50

70 100

Rectifier Device Data

MBR2035CT, MBR2045CT

FIGURE 5 - CURRENT DERATING. INFINITE HEATSINK

!

40.--'---r--'---r--.---r--'---r--.--~

~

~

~

5!
_

~~

FIGURE 6 - CURRENT DERATING. ROJA = 16° C/W

~

Rated Voltage Applied

35~-4--~--~,,~~-+--~--+---~-+--~

>

L-~

__

~

__-L__

120

110

~

~
~

~Y:\

__

~

__

24r---+---~~-+---+--

~

'"~
:;:
'">

5.0 /--1/--t--t--+--+--+...:><:~~.-T\+-+--1

o

~

a

~ 10~~===f===F==~2;0~~~~~~~~C

~

28/--+--1/---j---+--+---+--/--~

IE

~

10

~

...

30 r---+----r---+---+~~r_--+_--_r---t--_t--~
25
"IPK I
I..
"
I =rr (Resistive load)
"" '\. AV I
I
20 I-- (Capacitive load)
=5 IV
S
15
AV
I " '\. quare Wave

~

32.---.---.----r---.---,r---r---,---~

I"

L-~

__

~

130
140
TC. CASE TEMPERATURE 1°C)

__-L__

150

8.0 I--+---I'--+....,.~~o:::'~~c+---""'t---I

4.0

;

~

160

20

FIGURE 7 - FORWARD POWER DISSIPATION

20
18

SlOe ~ave
Resistive load

16
14

-

12

-

(Capacitive load!

10

6.0

'"
~

5

I'j/

4.0

~~

·2.0

'" o "..o

4.0

I~

160

10.---.----r---.----r---,----r--~r_--,

~
~

B.O

I---+---t-'....-+--+---+--+_

a~

6.0

~==t::::;;~J---~----=~..E_~~+_--+_----1f_-__1

~
~

4.0

~~:::::-K~~t----b~+

...

a;

g;

V

I

140

:;;

Square Wave :;

TJ = 150°C-

60
80
100
120
TA. AMBIENT TEMPERATURE (OCI

FIGURE 8 - CURRENT DERATING. FREE AIR

V/ V".
~
/'

v/ P /
h //, V
/// ~

8.0

'"

IIpK .:

'20 10 AV /

40

-

'"

ffi

;;;:

2.0 I-----t----t--t-

>

g'"

16
8.0
20
24
28
12
IFIAVI' AVERAGE FORWARO CURRENT IAMPSI

(Capacitive Load)
OL-__

~

o

32

__

~

::~ =20,

__

~

____"---__

~

_____"L___.J'__"__'

120
100
40
60
80
TA. AMBIENT TEMPERATURE lOCI

20

140

160

FIGURE 9 - THERMAL RESPONSE

ffi

::l

'"~

<:>
~

~

z

'"...'"

10
07
05
03
02

0.1
:; 0.07
ffi 0.05
%
~

'"

...

~ 0.03

~ 0.02

i!:

-

-'

iii
'"

....... -'

~ 0.010.01

0.1

.....

d=LJ1

'p

-

1--11----4

~TJL'Ppk

P
'

TIME

Duty Cycte. 0 '" tp/ll
Peak Power, Ppk. IS peak 01 an
equivalent square power pulse.

. ReJdD + 11 - DI . Il't +tpl + Iltpl-Ilttll

where liT Jl ::: the Increase In lunctlon temperature above the lead temperalUre
tit) = normalized value ot lranSlenllhermal resistance at tlme,l,
lor example, r(11 + t p) : normalized value of tranSient
thermal resistance at Ume, 11 + tp

10

1.0

1000

100

t. TIME (m,)

Rectifier Device Data

3-71

MBR2035CT, MBR2045CT

FIGURE 10 - CAPACITANCE

HIGH FREQUENCY OPERATION

1500

Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed by using 'a model consisting of an ideal diode in parallel
with a variable capacitance, (See Figure 10,)
Rectification efficiency measurements show that operation will
be satisfactory up to several megahertz. For example, refative
waveform rectification efficiency is approximately 70 per cent at
2,0 MHz, e,g" the ratio of de power to RMS power," the load is
0,28 at this frequency, whereas perfect rectification would yield
0406 for" sine wave Inputs, However, In contrast to ordinary
Junction diodes, the loss in waveform efflcieny is not indicative of
power loss; It IS simply a result of reverse current flow through the
diode capacitance. which lowers the de output voltage.

1000

~

700

........

w

u

z

~
u

500

U

300

'"

...

«
«
u

Maximum

r--;:,

TYPICal

:-.......
......

200

~,

150
005 01

02

05
10
20
50
VR, REVERSE VOLTAGE (VOLTS)

10

20

FIGURE 11 - TEST CIRCUIT FOR dv/dt AND
REVERSE SURGE CURRENT
+150 V, 10 mAde
20kll.
VCC

fi2V

---I

12Vdc

I

100

I-- 2,0 I's

40

l'F

1,OkHz
Current
Amplitude
Adjust
0-10 Amps

100
Carbon
1,0"Carbon
'IN5817

3-72

Rectifier Device Data

50

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MBR2060CT
MBR2070CT
MBR2080CT
MBR2090CT
MBR20100CT

Switch mode
Power Rectifiers
· .. using the Schottky 8arrier principle with a platinum barrier metal. These state-of-the-art
devices have the following features:
•
•
•
•
•
•
•
•
•

20 Amps Total (10 Amps Per Diode Leg)
Guard-Ring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 118"
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction

MBR206DCT and MBR2010DCT
are Motorola Preferred Devices

SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
60-100 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
,
• Marking: 82060, 82070, 82080, 82090, 820100

,"
3
.
CASE 221 A-116
To-220AB

PLASTIC

MAXIMUM RATINGS PER DIODE LEG
Rating

Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

Average Rectified Forward Current (Rated VR) TC

=

60

70

80

90

100

Unit
Volts

IF(AV)

10

Amps

IFRM

20

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave: single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (21's, 1 kHz)

IRRM

0.5

Amp

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC

=

133"C

MBR
2060CT 2070CT 20BOCT 2090CT 20100CT

133"C

Operating Junction Temperature

TJ ..

-65 to

Storage Temperature

Tstg·

-65 to

Voltage Rate of Change (Rated VR)

dvldt

+ 150
+ 175

"C
"C

10,000

VII'S

2

"CIW

THERMAL CHARACTERISTICS
Maximum Thermal Resistance - Junction to Case
- Junction to Ambient

60

ELECTRICAL CHARACTERISTICS PER DIODE LEG
Maximum Instantaneous Forward Voltage (1)
(iF = 10 Amp, TC = 125"C)
(iF = 10 Amp, TC = 25"C)
(iF = 20 Amp, TC = 125"C)
(iF = 20 Amp, TC = 25"C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TC = 125"C)
(Rated dc Voltage, TC = 25"C)

iR

III Pulse Test: Pulse W,dth

= 300 1'5,

Volts
0.75
0.85
0.85
0.95
mA
6
0.1

Duty Cycle", 2%.

Rev 2

Rectifier Device Data

3-73

MBR2060CT, MBR2070CT, MBR2080CT, MBR2090CT, MBR20100CT

150"<;,

0

I--f-- TJ - 150'C

.... V

<

m'c, .// /'

0

// /

//
1

I

/

/

'/

ffi

~

/

°E §TJ

125'C

::: I=TJ

100'C

1

'"
'"
::>
u

2S'C- r---

TJ

V

3

E

hl'100"C= 1===

O. 1

.!F
0.D1 ~§TJ

U

~

U

U

M

MUM

U

2S'C

20

40
60
60
100
VR. REVERSE VOLTAGE (VOLTS)

VF.INSTANTANEOUS VOLTAGE (VOLTS)

Figure 2. Typical Reverse Current Per Diode

Figure 1. Typical Forward Voltage Per Diode
0
8

6

"-

0

I"\.

RATEb VOLTAGE_
APPLIED

'\.

6
4

'\

"\.

2
0

I"\.

"

120

Figure

0

'\.

r-.?e

-"\

130
140
TC. CASE TEMPERATURE ('C)

2
0

160

150

;;..~

SQ, WAVE"-...
W

3. Current Derating. Case

16

= 25'C

0

= 20

160

~

WO

= 5, , /

y

,/

,/

." ~ . /

V V/. ~ / '
VA ~..... ~ 'SO, WAVE

I/": ~ I'/" "-

o~
o

loo...

~~

= 10
~V

IPKIIAV

'"

PI,
IPKIIAV

2

de

60
60
~
~
TA. AMBIENT TEMPERATURE ('C)

40

IPKIIAV
TA

"

-- -- ""- -m'"

Figure 4. Current Derating. Ambient

20

18

"'-

8

'\.
0
110

"" ""-

2

Re.IC = 2'C!W

'\.de

SO,'\..
WAVE "\

VOLT~GE AP~LlE~+-

RATE6
- - - - (HEATSINK) R8JA = 16'CIW
(NO HEATSINK) ReJA = 60 'CIW

8

I\.

4

120

~~ "/
~~

de

~

6

8

ro

U

~

W

W

W

AVERAGE CURRENT lAMPS)

Figure 5. Average Power Dissipation and
Average Current

3-74

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Switch mode ™ Power

MBR20200CT

Dual Schottky Rectifier
· .. using Schottky Barrier technology with a platinum barrier metal. This
state-of-the-art device is designed for use in high frequency switching power supplies
and converters with up to 48 volt outputs. They block up to 200 volts and offer improved
Schottky performance at frequencies from 250 kHz to 5.0 MHz.
•
•
•
•

SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
200 VOLTS

200 Volt Blocking Voltage
Low Forward Voltage Drop
Guardring for Stress Protection and High dv/dt Capability (10,000 V/Jls)
Dual Diode Construction - Terminals 1 and 3 Must be Connected for Parallel
Operation at Full Rating

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B20200

•

"3
CASE 221A-06

(TO-220)

MAXIMUM RATINGS (PER LEG)
Rating

Symbol

Value

Unit

VRRM
VRWM

200

Volts

IF(AV)

10
20

Amps

Peak Repetitive Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz) TC 90°C

IFRM

20

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2.0 J.lS, 1.0 kHz)

IRRM

1.0

Amp

TJ

-65 to +150

°C

Storage Temperature

Tstg

-65 to +175

°C

Voltage Rate of Change (Rated VR)

dvldt

10,000

VIJ1s

VF

0.9
0.8

Volts

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VR

Average Rectified Forward Current
(Rated VR) TC 125°C

Per Leg
Per Package

=

=

Operating Junction Temperature

THERMAL CHARACTERISTICS (PER LEG)
Thermal Resistance - Junction to Case

ELECTRICAL CHARACTERISTICS (PER LEG)
Maximum Instantaneous Forward Voltage (1)

Maximum Instantaneous Reverse Current (1)

=10 Amps, TC =25°C)
=10 Amps, TC =125°C)
=20 Amps, TC =25°C)
=20 Amps, TC =125°C)
(Rated dc Voltage, T C =25°C)
(Rated dc Voltage, T C =125°C)

(IF
(IF
(IF
(IF

1.0
0.9
IR

1.0
50

mA

500

pF

DYNAMIC CHARACTERISTICS (PER LEG)

I

Capacitance (VR

=-5.0 V, TC =25°C, Frequency =1.0 MHz)

(1) Pulse Test: Pulse Width:::: 300 J.1S, Duty Cycle $2.0%.

Rev 1

Rectifier Device Data

3-75

MBR20200CT

10,000

100
iL 70
50

G 20
TJ = 125'C

~ 10
::2 7
5

/ 1/

I J ,I

W

I

r

II:

Ji.'

0.01

0.6

0.8

o

20

40

60

..
80

100

120

140

160

180

Figure 1. Typical Forward Voltage (Per Leg)

Figure 2. Typical Reverse Current (Per Leg)

'c

SQl\A~.V
WAVE
~

24

/

12

/

1"'/
Vde

IpK
-1- =2
AV /

I ~~

/

/' ,/

/

VV

~ ~V

ffi

20

'"

"'" ""- =" ~
S UA E"
WAVE

~

......

10

de

~
~

w

~

~

w
~

~

~

15

20

25

30

35

1r

0 90

~

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

110
120
130
140
TC;CASE TEMPERATURE (OC)

Figure 3. Forward .Power Dissipation

Figure 4. Current Derating, Case

LL
.e,
w
u 300
z

...........

....... .:::: ........

SCUAR
WAVE

150

160

"-I.......

J=

~o

.........

~

u



II:

r-T =25'

~ 32

-

W

-

II

0.4

40

~

""

10

vf; INSTANTANEOUS VOLTAGE (VOLTS)

~ 36

~

J = lUI

W

W

/

0.2

"

>z
II:
II:
::::J

f

I

~

/

100

U

~
~ 2

~

.::,

= 100°C-

>=5

t

//

,-r,V /

TJ = 125°C

«

~ Y" /

I

"~

1,000

"/ . /

T}=l50° ;---0 //:

II:
II:

'"
~

...-

TJ = l$O'C

!
ffi

175

10

r-.

-

20

50 70

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Typical CapaCitance (Per Leg)

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Advance Information
SWITCHMODETM Power Rectifiers

MBR2515L

· .. employing the Schottky Barrier principle in a large metal-te-silicon power
diode. State-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, low voltage converters, OR'ing diodes,
and polarity protection devices.
•

Very Low Forward Voltage (0.2B V Maximum @ 19 Amps, 70°C)

•

Guardring for Stress Protection

•

Highly Stable Oxide Passivated Junction (100°C Operating Junction
Temperature)

•

Epoxy Meets UL94, VO at 1/B"

SCHOTTKY BARRIER
RECTIFIER
25 AMPERES
15 VOLTS

~3
4

Mechanical Characteristics
•

Case: Epoxy, Molded

•

Weight: 1.9 grams (approximately)

•

Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable

•

Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

•

Shipped 50 Units Per Plastic Tube

•

Marking: B2515L

CASE 2218-03, STYLE 1
(TO-220AC)

MAXIMUM RATINGS (Per Leg)
Symbol

Max

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

15

Volts

Average Rectified Forward Current
(Rated VR) TC = 90c C

IF(AV)

25

Amps

Peak Re'petitive Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz) TC = 90°C

IFRM

30

Amps

Non Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave. single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2.0 I's, 1.0 kHz)

IRRM

1.0

Amps

TJ

-65 to +100

°c

Tstg

-65 to +125

°C

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS
2.0

Thermal Resistance - Junction to Case

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(IF = 25 Amps, TJ = 25°C)
(IF = 25 Amps, T J = 70°C)
(IF = 19 Amps, TJ = 70C C)

VF

Maximum Instantaneous Reverse Current (1)
(Rated DC Voltage, T J = 25°C)
(Rated DC Voltage, T J = 70 C C)

IR

Volts
0.45
0.42
0.28
mA
15
200

(1) Pulse Test: Pulse Width = 300 I1s, Duty Cycle,; 2.0%

Rectifier Device Data

3-77

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Switch mode ™
Power Rectifier

MBR2535CTL

· .. employing the Schottky Barrier principle in a large metal-to-silicon power
diode. State-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use in low voltage,
high frequency switching power supplies, free wheeling diodes, and polarity
protection diodes.

SCHOTTKY BARRIER
RECTIFIER
25 AMPERES
35 VOLTS

• Very Low Forward Voltage (0.55 V Maximum @ 25 Amps)
• Matched Dual Die Construction (12.5 A per Leg or 25 A per Package)
• Guardring for Stress Protection
• Highly Stable Oxide Passivated Junction (125°C Operating Junction
Temperature)

,"

• Epoxy Meets UL94, VO at 1/8H

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)

3

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable

CASE221A~6

(TQ-220AC)

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B2535L
MAXIMUM RATINGS (PER LEG)
Symbol

Value

Unit

Peak Repetitive Reverse Voltage
WorKing Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

35
35
35

Volts

Average Rectified Forward Current (Rated VR) TC = 110°C

IF{AV)

12.5

Amps

Peak Repetitive Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz) TC = 95°C

IFRM

25

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2.0 I's, 1.0 kHz)

IRRM

1.0

Amp

TJ

--65 to +125

°C

-65 to +150

°C

Voltage Rate of Change (Rated VR)

Tstg
dv/dt

10,000

VII'S

Controlled Avalanche Energy

Waval

20

mJ

R9JC

2.0

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS

I Thermal Resistance -

Junction to Case

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(IF 25 Amps, TJ 25°C)
(IF 12.5 Amps, TJ 25°C)
(IF 12.5 Amps, TJ 125°C)

=
=
=

=
=
=

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ 25°C)
(Rated dc Voltage, TJ 125°C)
(1) Pulse Test: Pulse Width 300 I's, Duty Cycle ,;2.0%.

=
=
=

Volts

VF
0.55
0.47
0.41

mA

IR
5.0
500

Rev 1

3-78

Rectifier Device Data

MBR2535CTL

50

/'
/

20

n:::;;
~

TJ = 125°C
10

I

1/1

/"

1000

""

1

~

-

TJ = 125°C

~

--

100

a:
a:

;;;:::

TJ = l000C

~

u

10

w

en
a:

V

~

1

a:

TJ = 25°C

I-

Z

w

I

a:
a:
~
u
0
a:

I

I

I

II

,

~
a:

12
en

J.--

0.1

I

10
15
20
25
VR. REVERSE VOLTAGE (VOLTS)

TJ = 25°C

I

~

0
w
Z

~

35

Figure 2. Typical Reverse Current, Per Leg

I

~
en

30

~

TJ = 125°C
0.5

I

0.2

0.1

I
I

SINE WAVE
(RESISnVE LOADY

o

0.1

h
V

/'

~ ./

J

I

/SOUARE
WAVE

0.2
v~

0.3
0.4 0.5
0.6
0.7
0.8
INSTANTANEOUS VOLTAGE (VOLTS)

0.9

10

~

Figure 1. Typical Forward Voltage, Per Leg

......de

W ./
~V
......

10

15

20

25

30

35

40

IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 3. Forward Power Dissipation, Per Leg

32
iii
~ 28

20

~

(RATED Vr APPLIED)
RaJC = 2.0°Crw

::;;

.......

24

~ 20

~

~ 16

i12 12

SQUARE"-

!z
ll!

~

~~

4

~

0

85

,

105
115
TC. CASE TEMPERATURE (OC)

Figure 4. Current Derating

Rectifier Device Data

.......

SQU~ ~
.........

WAVE

~

125

if'

~

~

~

~

'"

....... ~'"

12

~~

95

14

aa: 12
o 10
~ 8

de

"'- ~

w

if'

""

["-.. ~

f--

~ 16

:5-

~

RaJA =16"crw

18

0
0

25

I"-

1"0..
125

50
75
100
TA. AMBIENTTEMPERATURE (OC)

Figure 5. Current Derating Ambient, Per Leg

3-79

•

I

MOTOROLA

-

MBR2535CT
MBR2545CT

SEMICONDUCTOR

TECHNICAL DATA

•

MBR2545CT is •
Motorola Preferred Device

Switch mode Power Rectifiers
.•. using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art
devices have the following features:
Guardring for Stress Protection
o Low Forward Voltage
o 150°C Operating Junction Temperature
o Guaranteed Reverse Avalanche
o

SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
35 and 45 VOLTS

Mechanical Characteristics:
Case: Epoxy, Molded
o Weight: 1.9 grams (approximately)
o Finish: All Extemal Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
o Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
o Shipped 50 units per plastiC tube
o Marking: B2535, B2545

o

4

1
2
3.

TG:220AB
PLASTIC

MAXIMUM RATINGS
Symbol

MBR2535CT

MBR2545CT

Unit

VRRM
VRWM
VR

35

45

Volts

IF(AVI

30

30

Amps

IFRM

30

30

Amps

Nonrepetitive Peak Surge Current per Diode Leg
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)

IFSM

150

150

Amps

Peak Repetitive Reve.r~e Surge Current

IRRM

1.0

1.0

Amps

TJ
Tstg

-65 to + 150
-65 to +175

-65 to + 150
-65 to +175

°C
°c

dv/dt

1000

10000

VipS

ROJC

1.5

1.5

°C/W

0.73
0.82

0.73
0.82

40
0.2

40
0.2

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage

DC Blocking Voltage
Average Rectified Forward Current (Rated VR)

TC= 130°C
Peak Repetitive Forward

(Rated VR.

Squ~re

Curren~

Per Diode Leg

Wave. 20 kHzl TC = 130°C

(2.0 pS. 1.0 kHz)
Operating Junction Temperature
Storage Temperature

Voltage Rate of Change (Rated VR)
THERMAL CHARACTERISTICS PER DIODE LEG
Maximum Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS PER DIODE LEG
Maximum Instantaneous Forward Voltage (1)

Maximum Instantaneous Reverse Current (1)

(Rated de Voltage. TC = 125°C)
(Rated de Voltage, TC" 25°C)
11 I Pulse Test' Pulse WIdth

=300 JlS.

Volts

vF

(iF = 30 Amp, TC = 125°C)
(iF = 30 Amp, TC = 25°C)

mA

iR

Duty Cycle::;;;; 2 0%

Rev'

3-80

Rectifier Device Data

I

MBR2535CT, MBR2545CT

FIGURE 1 - TYPICAL FORWARD VOLTAGE

FIGURE 2 - TYPICAL REVERSE CURRENT
200
100

in 100

!lE

70

~ 50
!;;;
~ 30

:--

L---"

:::l

TJ= 125°C
100°C
25°C")("

'-' 20
c

~

~10

.......-: ~
l-0 -;:?'

40 -TJ-150oC
20
125°C
10

'-'
en

4.0
2.0
10

....

~

!5

-v. ~

V/

ffi

~

a:

....

.!i=

JI

~ 3.0

~ 2.0
~

o

75°C

004
002
0.0 1
0004
0002

III /
I
/I I

0.2
0.4
0.6
0.8
'F. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

10

o

10

"'

!Z
~

B

20

Square wav~

c
a:

~ 16
~

~

~e
\

'" "-

24

a:

12

;:;:

ROJC = 1.5°C/W
"I
I

$4.0
o

110

120

28

~

24

13

20

-

c
~
~

\

~
w

\.

\. \
\ \
130
140
TC. CASE TEMPERATURE (OC)

40

50

""'- i'...

150

'"~""

16

f-.

I'-......

f- __
de
~-

8.0

""~4.0 1--- f-_
g

"'"

..........

,

....

Square Wav";--

0

o

20

40

.1

ROJA = 16°C/W
- - IWith TO-220 Heat Sink)
___ . ROJA = 60 0 C/W
(No Heat Sink)

""'- ......
.Squar. Wa;;'

12

1

Rated VR Applied
de

a:

\

r- ~ated Voltage Applied

"" 8.0
ffi

!lE

~

\

'\.

20
30
VR. REVERSE VOLTAGE IVOLTSI

!o-

FI,GURE 4 - CURRENT DERATING. AMBIENT

in 32

~ 28

--

25°C

FIGURE 3 - CURRENT DERATING. CASE

~32

- -

100°C

04
0.2
0I

G:i

en 7.0
@ 5.0

.!f. 1.0

«
.§.

..

--

--

b-..

........,

__
I'r--......

'" "

~.

.... .

~

60
80
100
120
TA, AMBIENT TEMPERATURE 1°C) .

:.... ~
140

FIGURE 5 - FORWARD POWER DISSIPATION

in 32

..S
c

24

1li
en

20

~ 28

~

i3
a:

16

0.

12

3:c
w

'"

~

B.O

:;;-4.0

~

0.

4.0

Rectifier Device Data

8.0
12
16
20
24
28
32
IF. AVERAGE FORWARD CURRENT lAMPS)

36

40

3-81

160

•

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Advance Information
SWITCHMODETM Power Rectifier

MBR3045ST
Motorola Preferred Device

· .. using the Schottky Barrier principle with a platinum barrier metal. This
state-of-the-art device has the following features:
• Dual Diode Construction - Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
45 VOLTS

45 V Blocking Voltage
Low Forward Voltage Drop
Guardring for Stress Protection
'150°C Operating Junction Temperature
Guaranteed Reverse Avalanche

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead Temperature for Soldering Purposes: 260·C Max. for 10 Seconds
CASE 221A~, STYLE 6
(To-220AB)

• Shipped 50 Units Per Plastic Tube
• Marking: B3045
MAXIMUM RATINGS
Symbol

Max

Unit

Peak RepetHive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

45

V

Average Rectified Current
TC= 130°C

IF(AV)

30
15

A

Peak Repetitive Forward Current, Per Diode
(Square Wave, VR =45 V, 20 kHz)

IFRM

30

A

Non Repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM,

150

A

Peak Repetitive Reverse Current, Per Diode
(2.0118, 1.0 kHz)

IRRM

2.0

A

TJ

-65 to +150

°c

Tstg

-65 to +175

°c

Peak Surge Junction Temperature
(Forward Current Applied)

TJ(pk)

175

°C

Voltage Rate of Change (Rated VR)

dVidt

10000

VlJ1S

Rating

Per Device
Per Diode

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS PER DIODE
Thermal Resistance, Junction to Case

1.5

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

3-82

Rectifier Device Data

MBR3045ST

ELECTRICAL CHARACTERISTICS PER DIODE
Rating

Symbol

Instantaneous Forward Voltage (1)
(IF 30 Amp, T C 25'C)
(IF 30 Amp, T C 125'C)
(IF 20 Amp, TC 125'C)

VF

Instantaneous Reverse Current (1)
(VR 45 Volts, T C 25'C)
(VR 45 Volts, T C 125'C)

IR

=
=
=

=
=

=
=
=

=
=

(1) Pulse Test: Pulse Width

Rectifier Device Data

Max

Unit
V

0.76
0.72
0.60
mA
0.2
40

= 300 I's, Duty Cycle S 2.0%

•

3-83

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MBR735
MBR745

Switch mode Power Rectifiers
· .. using the Schottky Barrier principle with a platinum barrier metal. These state-ol-the-art
devices have the following features:
•
•
•
•
•

•

MBR745 I.••

Guardring lor Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 1/8"

Motorola Preferred Device

SCHOTTKY BARRIER
RECTIFIERS

Mechanicat Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Tempereture lor Soldering Purposes: 260°C Max. lor 10 Seccnds
• Shipped 50 units per plastic tube
• Marking: B735, B745

7.5 AMPERES
35 and 45 VOLTS

4

3 oo----I.~lr---o I, 4

CASE 2218-03
TO-220AC

3
MAXIMUM RATtNGS
Svmbol

MBR735

MBR745

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

35

45

Volts

Average Rectified Forward Current (Rated VRI
TC = 105°C

IF(AV)

7.5

7.5

Amps

Peak Repetitive Forward Current
IRated VR. Square Wave. 20 kHz) TC = 105°C

IFRM

15

15

Amps

Nonrepetitive Peak Surge Current
(Surge apphed at rated load conditions halfwave,
single phase. 60 Hz)

IFSM

150

150

Amps

Peak Repetitive Reverse Surge Current
(2.0 I's. 1.0 kHz)

IRRM

1.0

1.0

Amps

Rating

TJ

-65 to +150

-65 to +150

°C

Tstg

-65 to +175

-65 to +175

°C

dv/dt

1000

10000

VII's

Maximum Thermal Resistance. Junction to Case

3.0

3.0

Maximum Thermal Resistance. Junction to Ambient

60

60

0.57
0.72
0.84

0.57
0.72
0.84

15
0.1

15
0.1

Operating Junction Temperature
Storage Temperature

Voltage Rate of Change (Rated VR)
THERMAL CHARACTERtSTICS

ELECTRICAL CHARACTERtSTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 7.5 Amp. TC = 125°C)
(iF = 15 Amp. TC = 125°C)
(iF = 15 Amp. TC = 25°C)

VF

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage. TC = 125°C)
(Rated de Voltage. TC = 25°C)

iR

Volts

mA

(1) Pulse Test: Pulse Width = 300 ps. Duty Cvcle ~ 2.0%

Rev 1

3-84

Rectifier Device Data

MBR735, MBR745

FIGURE 1 - TYPICAL FORWARD VOLTAGE

,.Ie

50

,-

~ 30

!;;
~
a:
=>

+J =

20

7.0
~ 5.0

TJ
10



5.0

a:

i
~
w

'"ffi

:;(

10

20
30
VR. REVERSE VOlTAGE (VOLTS)

40

50

FIGURE 4 - CURRENT DERATING. AMBIENT

Rated Voltage Applied

I,

"""I'-. ........

'"

180° Square

~

=>
u

ri'..

wav~

: .

~ 1.0
~ a

'" "'-

w

'"

« 2.0
ffi
>
«
1.0
:;-

'\

......... ....................

-- -- 20

~ 4.0
3.0

~

a:

Rectifier Device Data

.# .......-

2.0

«
'"ffi 1.0
>
«

~
E

140

#' ./'
d
/'

<:>

w

40
60
80
100
120
TA. AM81ENT TEMPERATURE (OC)

~

...

0

~

-- -- ---

/ / 180°FbV de- ./Y ./'

en
is 5.0

a:

~ ~.
-~
~ I:"-.
~~

1800~-

6.0

a:

«

~

FIGURE 5 - POWER DISSIPATION

~ 7.0
z
<:>

;:

'" '"

I----

l'\

~ 180° ~quare wave

~

150

- - - ROJA = 60 0C/W
(No HBat Sink)

............

5.0

a:
~ 3.0

140

>«

~u;

,

- - ROJA = 16°C/W

;:

"-

I'" "'I'.."-

120
130
TC. CASE TEMPERATURE (OC)

Rated Voltage Applied
de

~
« 4.0

.

2.0

110

~
z>- 6.0

~e

~

4.0

~
::;; 7.0

ROJC = 3.0 0C/W

"'i'.,

3.0

100

o

-

f-""

8.0

8.0

~ 7.0

25°C

:;, 0.01

0.7
.!±- 0.5

-...-

1.0

a:
=>

/ V/

-

~

100°C

~

2.0

IS00C
125°C

.§.

./ ''/
/,
25°C

~ 3.0

i

--

//

75°C

~

~

....

100

V

.......-/

./: ::;:......-

~ 10

::il
z

12~OC
,

FIGURE 2 - TYPICAL REVERSE CURRENT

.....-

/'

~
~

"/

h-

.JIIP
2.0

4.0
6.0
8.0
10
12
14
16
IF(AV). AVERAGE FORWARO CURRENT (AMPS)

18

20

I

3-85

160

•

I

MOTOROLA

-

•

MBR1035
MBR1045

SEMICONDUCTOR

TECHNICAL DATA

MBRt045lsa
Motorola Preferred Device

Switch mode Power Rectifiers
· .. using the Schottky Barrier principle with a platinum barrier metal. These state·of-the-art
devices have the following features:

•

•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS

Guardring for Stress Protection
Low Forward Voltage
150·C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at I/B"

10 AMPERES

20 to 45 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260·C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: Bl035, Bl045

4

3 O---I.~I-""'01, 4

3

CASE 2218-03
TO-220AC
PLASTIC

MAXIMUM RATINGS
Rating

Symbol

MBR1035

MBR1045

Unit

VRRM
VRWM
VR

35

45

Volts

Average Rectif,ed Forward Current (Rated VR)
TC ~ 135°C

IF(AV)

10

10

Amps

Peak Repetitive Forward Current
(Rated VR. Square Wave. 20 kHz) TC ~ 135°C

IFRM

20

20

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave.
single phase. 60 Hz)

IFSM

150

150

Amps

Peak Repetitive Reverse Surge Current
(2.0I's. 1.0 kHz) See Figure 12

IRRM

1.0

1.0

Amps
°c

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Operating Junction Temperature
Storage Temperature
Voltage Rate of Change (Rated VR)

TJ

-65 to + 150

-65 to+ 150

Tstg

-65 to +175

-65 to +175

°c

dvldt

1000

10000

VII'S

Symbol

MBR1035

MBR1045

THERMAL CHARACTERISTICS

Characteristic
Maximum Thermal Resistance. Junction to Case

ELECTRICAL CHARACTERISTICS

Characteristic
Maximum Instantaneous Forward Voltage (1)
(iF~ lOA. TC~ 125°C)
(iF ~ 20 A. Te ~ 125°C)
(iF; 20 A. TC; 25°C)

vF

Maximum Instantaneous Reverse Current (11
(Rated de Voltage. TC ; 125°C)
(Rated de Voltage, TC; 25°C)

iR

(1) Pulse T851: Pulse Width

Unit
Volts

0.57
0.72
0.B4

0.57
0.72
0.B4

15
0.1

15
0.1

mA

=300 "'s, Duty Cycle ~ 2.0%

Rev 2

3-86

Rectifier Device Data

MBR1035, MBR1045

FIGURE 1 -MAXIMUM FORWARD VOLTAGE

FIGURE 2 -TYPICAL FORWARD VOLTAGE.

100

100
70

y

50

/' ./ioooc
."

TJ = 150°C
30

70

1/

,/

//
/
/"

/
JV /

30

IVV

0

"-

20

,/, /

I

u;

::E

10

0-

a;

7.0

...,

5.0

II

"-

::E

a:

ffi 2.0

z

 2.0

~
160

150

r----r--~r---,---~----r----r--~r---~

9.0

r---

~

50

~

.

~

/'

/=5 "'~I-/7'//cr'//-b~/''--+----+----f

Ifl

§'v

h ./L.V/'

///~

3.0
1.0

/

20 -,1,.:0+'r---7'~"/L.,,,L
.t---+--+----l

4.0

~ 2.0

~

20

I

.lV./~

;v.Ar

00

2.0

o..

TJ = 150°C.,-1--

40

100
60
80
120
TA. AMBIENT TEMPERATURE (OC)

140

160

FIGURE 8 - CURRENT DERATING. FREE AIR

FIGURE 7 - FORWARD POWER DISSIPATION

10

~

I

I===*==+;;:::~~~,r--':"'i:;(-T--T-I

B.O

ffi 4.0 I---+-:--+--+-...,.!;:!?"",,~--<::~.r->,,+-----j

dc

130
140
TC. CASE TEMPERATURE (OC)

7.0
IpK
6.0 f - - (Capacitive Load) IAV

Q

101---+.....;;::""'I-0;;::--+--="""f7£--+--+--+-----j

... 6.0 P==1f==I=;;;;±=-'~~"-±-----''''t

1----1r---t--+--~i_--+ Square lave -~
~ B.O 1---1---+--+ Sine vJave
. :/
_
~
Resistive Load V/
/'

is

14~--+--+_-_+--1_-~~--+--+_-_1

15a: 121---+--"~""",.._+---1--

.

= 11" (Re.istive Load)
I
)

~

110

I

:PK
AV

I'( I\.

~

S?

o..

~

110 ' - - (Capacitive Load) IpK ="5

...
~

16r---.---.----r---.----r---.-~.---,

c;;-

Rated Voltage Applied

I==+~....:l>----+

ie

5.0

15

4.0 i_--+--+""'__t - - - - 1 - - + - - + - - I - - - - l

~

g§

~

3.0

1:;:=::t::::;~J---t---=:~..I_~+--+---I--~

~

2.0

s:==t==:::+~~~~~:_--t~~t--f----1

~

1.0

I---+--+--+--)q'.>il!~~~

i

~

,.._-+-..",.+---f

j

4.0
6.0
8.0
10
12
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

16

14

20

60

40

80

100

120

140

160

TA. AMBIENTTEMPERATURE (OC)

FIGURE 9 - THERMAL RESPONSE

ffi

!:l
c
::;;
a:
Q

......c·z
~

1;;.

1.0
0.7
0.5
0.3
0.2

0.1
~
::;; 0.07
ffi 0.05

i!:

0.03

~ 0.02

~

..ftJ1

,.,. r-

i3
a:

15

-

....

-

~ 0.0~.D1

3-88

I--"

Ip

0.1

_

)--11--1
6TJL

where

1.0

Pk

Du.y Cycl •• D ='phl

TIME

Peak Power, Ppk. is peak of an
equivalent square power pulse.

=Ppk . R8JL[D + (1 -

0) . rltt + 'p) + d. p) - rlt,))
Increase in junction temperature above the lead temperature
rm =normalized value of transient thermal resistance at time, t,
for example, rhl + tp) =normalized value of transient
~hermal resistance at time. t1 + tp.
.0.TJ l = the

10

100

t TIME (mo)

Rectifier Device Data

1000

MBR1035, MBR1045
FIGURE 10 - CAPACITANCE

HIGH FREQUENCY OPERATION

1500

Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and

1000

reverse recovery transients due to minority carrier injection and

stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel
with a variable capacitance. (See Figure 10.1
Rectification efficiency measurements show that operation will
be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency is approximately 70 per cent at
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is
0.28 at this frequency, whereas perfect rectification would yield
0.406 for sine wave inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficieny is not indicative of
power loss; it is simply a result of reverse current flow through the
diode capacitance, which lowers the dc output voltage.

i

700

......

500

'"

~

z

...5

Maximum

"t--

Tvpical,

"-

u

u

i'

300

l'....

"'l'"

200
150
0.05 0.1

0.2

0.5
1.0
2.0
5.0
VR, REVERSE VOLTAGE (VOLTSI

Schottky Chip -

FIGURE 11 - SCHOTTKY RECTIFIER
Platinum Barrier Metal

Guardring

~

10

50

View A-A

I

Aluminum Contact Metal

'"

i"~

20

I

Oxide

o:(passivation

_ _•_ _ _ _ _ _ _.J

Motorola builds quality and reliability into its Schottky
Rectifiers.
First is the chip, which 'has an interface metal between the
barrier metal and aluminum-contact metal to eliminate any
possible interaction between the two. The indicated guardring
prevents dvldt problems, so snubbers are not mandatory. The
guardring also operates like a zener to absprb over-voltage
transients.

Second is the package. The Schottky chip is bonded to the
copper heat sink using a specially formulated solder. This gives
the unit the capability of passing 10,000 operating thermalfatigue cycles having a ~TJ of 100°C. The epoxy molding
compound is rated per UL 94, VO @ 1/8". Wire bonds are 100%
tested in assembly as they are made.
Third is the electrical testing, which includes 100% dvldt at
1600 VII'S and reverse avalanche as part of device
characterization.

FIGURE 12 - TEST CIRCUIT FOR dv/dt AND
REVERSE SURGE CURRENT

VCC

n
--I

2V

12Vdc

100

I-- 2.01'5
1.0 kHz
Current
Amplitude
Adjust
0-10 Amps
1.0Carbon
lN5817

Rectifier Device Data

II

3-89

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MBR1060
MBR1070
MBR1080
MBR1090
MBR10100

Switch mode
Power Rectifiers
· .. using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art
devices have the following features:
'
•
•
•
•
•
•
•
•

Guard-Ring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 1/8"
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction

MBR10S0 and MBR10100 are
Motorola Preferred Devices

SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
60-100 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All Ex1emal Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
'
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• ,Marking: B1060, B1070, B1080, B1090, B10100
3 ol-----1....I-~o 1, 4

,I'
3

CASE 2218..(13
TO-220AC

MAXIMUM RATINGS
Rating

Symbol

,Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

Average Rectified Forward Current (Rated VR) TC

=

1010

1080

1090

10100

60

70

80

90

100

Unit
Volts

IF(AV)

10

Amps

IFRM

20

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

150

Amps

Peak Repetitive Reverse Surge Current (2 /LS, 1 kHz)

IRRM

0.5

Amp

TJ

-65 to +150

·C

Storage Temperature

Tstg

-65 to +175

'c

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V//LS

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC

=

133'C

MBR

1060

133'C

Operating Junction Temperature

THERMAL CHARACTERISTICS
Maximum Thermal Resistance -

Junction to Case
Junction to Ambient

2
60

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 10 Amp, TC = 125'C)
(iF = 10 Amp, TC = 25'C)
(iF = 20 Amp, TC = 125'C)
(iF = 20 Amp, TC = 25'C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25'C)

iR

Volts
0.7
0.8
0.85
0.95
mA

6.0
0.10

(11 Pul.e Test: Pulse Width = 3001'5. Dutv Cycle", 2%,
R8V2

3--90

Rectifier Device Data

MBR1060, MBR1070, MBR1080, MBR1090, MBR10100

~ 50

~
!Z
~

20

~
a:

5

ac

IV

r/

// /

175"C

@
!Z

./
100"C=

<"

.§.

=

I-

15

N

/

125"C

~ =TJ

100"C

i=== :=TJ

25"C

.$

0.Q1
0.1

~ ~TJ

0.1

a:l
a:

~0.5

o

150"C

tJl

a:

/

'I

1

= 25"C

TJ

/

I-- -TJ

a:
a:
::0
u

1//

U)

~
z

r

#

150"C

10

12

:rt

10

0.2
0.3
0.4
0.5
0.6
0.7
0.8
VF.INSTANTANEOUS VOLTAGE IVOLTSI

0.9

20

Figure 1. Typical Forward Voltage
10

\

\

\
\
SQUARE
WAVE

120

'\. --IHEATSINKI R8JA
'\

!Z

a
~

\

-~~.

c

'\. . . . . -....

10

~

9

~

TA

z

'"~

!

SQUARE WAVE' \

~

1\
.....

\

.........

'\
20

160

40

60
80
100 120 140 160
TA. AMBIENT TEMPERATURE I"CI

180 200

Figure 4. Current Derating. Ambient

= 25"C

7

IPKIIAV

~ 6

c

IPKIIAV

a:

3!

IPKIIAV

~ 4

~
l!C

\

de

Figure 3. Current Derating. Case

iJj

*\

'\.

5~-~-~·~'\.~~--~--4-~~~--~--4-~

I12

\
\
\
150

60"CN/
RATED VOLTAGE APPLlED-

~ 7~~--~--1---~~'\--~--1---~~--~

R8JC = 2"CN/

130
140
TC. CASE TEMPERATURE I"CI

= 16"CN/

I---+-+---I-""i\f-- .- -INO HEATSINKI R8JA =
~

\
110

10~~---r--~.-r--.---r--'---r--.--,

\

\

120

Figure 2. Typical Reverse Current

RATkD VOL~AGE
APPLIED

de\

\

40
60
80
100
VR. REVERSE VOLTAGE IVOLTSI

IPKIIAV

= 20

= 10

V

4

~

=5

~

V~ ~ /

~ ...-/ ~ y
2
h ~~
~1
~~
~O
3

V

5

f-"'""

6

= PILL

tle

'"

'\..- , /
S~WAVE

7

10

IF IAVI. AVERAGE CURRENT IAMPSI

Figure 5. Forward Power Dissipation

Rectifier Device Data

3-91

•

-

MOTOROLA

•

MBR1635
MBRl645

SEMICONDUCTOR

TECHNICAL DATA

MBRI845 I••
Motorola Preferred Device

Switch mode Power Rectifiers
· .. using the Schottky Barrier principle with a platinum barrier metal. These state-ol-the-art
devices have the lollowing leatures:
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS

Guardring lor Stress Protection
Low Forward Voltage
150'C Operating Junction Temperature
Guaranteed Reverse Avalanche

16 AMPERES
35 and 45 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
$olderable
• Lead Temperature lor Soldering Purposes: 260'C Max. lor 10 Seconds
• Shipped 50 units per plastiC tube
• Marking: B1635, B1645

4

3 O---I.~I--O 1,4
3

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage

Symbot

MBR1635

MBR1645

Unit

Volts

VRRM
VRWM
VR

35

45

Average Rectilied Forward Current(Rated VRI
TC= 125°C

If(AV)

16

16

Amps

Peak Repetitive Forward Current

IfRM

32

32

Amps

IfSM

150

150

Amps

IRRM

1.0

1.0

Amps

Working Peak Reverse Voltage
DC Blocking Voltage

(Rated VR. Square Wave. 20 kHz) TC = 125'C
Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions hallwave.
single phase, 60 Hz)
Peak Repetitive Reverse Surge Current

(2.0 /1s. 1.0 kHz)
TJ

-65 to +150

-65 to +150

°C

Storage Temperature

Tstg

-65 to +175

-65 to +175

°c

Voltage Rate 01 Change (Rated VR)

dv/dt

1000

10000

V//J.s

Operating Junction Temperature

THERMAL CHARACTERISTICS
Maximum Thermal Resistance. Junction to Case

1.5

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous forward Voltage (1)
(iF = 16 Amp. TC = 125°C)
(iF = 16 Amp. TC = 25°C)

vf

Maximum Instantaneous Reverse Current(')
(Rated de Voltage, TC = 125°C)
(Rated de Voltage, TC = 25°C)

iR

Volts
0.57
0.63

0.57
0.63

40

40
0.2

mA
0.2

(1) Pulse Test: Pulse Width = 300 #lS. Duty Cycle ~ 2.0%

Ravl

3-92

Rectifier.Device Data

MBR1635, MBR1645

FIGURE 2 - TYPICAL REVERSE CURRENT

FIGURE 1 - TYPICAL FORWARD VOLTAGE

u;- 100
~ 70
- 50

i

0:

~

.......-:

30
TJ = 125°C
100°C

20

0:

'" 10
~

'V

25°C~

y/

~~

--

;...--

~

a

~

~ 1.0

0:

75°C

~ 0.4

'" 7.0
~ 5.0

0:

0.2

.!i= 0.1

z

/

;0 3.0
z

~ 2.0
~

o

0.04
0.02
0.01
0.004
0.002

1 ILJ
I
II I
0.2
0.4
0.6
0.8
vF. INSTANTANEOUS FORWARO VOLTAGE (VOLTSI

1.0

o

FIGURE 3 - CURRENT DERATING. CASE

I-

I'"

12

Square

'" 10
8.0

'\
'\

w

~

l\..de

"-Wav~

::0

u

""

4.0

o

110

130
140
TC. CASE TEMPERATURE (OCI

150

\

\
J60

~de

..........

6.0
4.0
0

o

r--..

AP~lied.!

50

I'....

de

20

--- """ '-".
.....

Square Wave...........

o

.1

RBJA ='16°C/W
(With TO-220 Heat Sinkl
___ RBJA = 60 oC/W
(No Heat Sinkl

--- -- '"--'",,""

Square Wav?-

---'"
ffi
~
}2 0 --- --~
~

'"

1\

'\

120

10

~ 8.0

"\

}2.0

12

o

'\

'\

'40

30

Rated VR

~

'\
"\

Rated Voltage Applied

~ 6.0 I - - RBJC = I 5°C/W

20

-

FIGURE 4 - CURRENT DERATING. AMBIENT

::0.

~_
~

10

u;- 16
<1:E 14

14

....-

25°C

VR. REVERSE VOLTAGE (VOLTSI

~ 20
:E 18
::0.
I16

~
a
~

-

....-

-

~

..,;. 1.0

200
100
« 40 -TJ= 150°C
.§. 20
1--125°C
!z 10
~ 4.0
100°C
2.0

40

......

~

60
80
100
120
TA. AMBIENTTEMPERATURE (OCI .

~

140

FIGURE 5 - FORWARD POWER DISSIPATION

u;- 16

lI-

'"~

14

0

12

z

!;;:
!l,

'"

!!l

10

0

~ 8.0~--+---+-~~~'--7~~~--~~~---r--~

~ 6.0 ~--+---h~¥-"-7~"'7'4-~..t"''---~--~---r--~

'"
g 4.0 ~--+-:;.tl7':..z{

30
20

u
~

10
7.0
5.0

~
rn

3.0

~

§

2.0

z
~
z

t.O

~

rn

100

50
TJ=125°c

V .......

V.......

17 iY""

.......

TJ = 150°C

fo'_ ~

:[

~

75°C
/

/.

/. I

25°C

I

~
::>

1.0

!liw

o. 1

~

/ 1/

JI

100°C

-

_I"""

75°C

......

!!- 0.01

25°C

r--

0.7

~ 0.50.2

125°C

u

"L
~

10

.......

0.4

0.6

0.8

1.0

iF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

Rectifier Device Data

1.2

0.00 1 0

10

20
30
VR, REVERSE VOLTAGE (VOLTS)

40

50

Figure 2. Typical Reverse Current

3-95

•

I

MBRF1545CT

MOUNTED
FULLY ISOLATED

Figure 3. Clip Mounting Position
for Isolation Test Number 1

Figure 4. Clip Mounting Position
for Isolation Test Number 2

Figure '5. Screw Mounting Position
for Isolation Test Number 3

• Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION··
4-40 SCREW

/'

~,
"

-/'

~;--

'$:

~

HEATSINK

I

~ COMPRESSION WASHER

I

IT""
ttr
,~,

~

-~

~.:-

<~ ; ; ~ HEATSINK

NUT

6a. Screw-Mounted

6b. Clip-Mounted
Figure 6. Typical Mounting Techniques

Laboratory tests on a limited numberof samples Indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in • Ibs is sufficient to provide
maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applYing 8 torque in excess of 20 in • Ibs will cause the plastic to crack around the mounting
hole, resulting in a loss of isolation capability.
AdditIonal tests on slotted 4-40 screws Indicate that the screw slot fails between 15 to 20 In • Ibs without adversely affecting the package. However, in order to positively ensure
the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in· Ibs of mounting torque under any mounting condItions
--For more Infonnation about mounting power semiconductors see Application Note AN1040.

3-96

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

SWITCHMODETM
Schottky Power Rectifiers

MBRF2045CT

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a
large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
for use as rectifiers in very low-VOltage, high-frequency switching power supplies,
free wheeling diodes and polarity protection diodes.
•
•
•
•
•
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
45 VOLTS

Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dvldt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL94, VO at 1/8"
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369(1)

30-1 :: ::

Mechanical Characteristics
•
•
•
•
•
•

Motorola Preferred Device

•

~~

3
CASE 2210-02
Case: Epoxy, Molded
ISOLATED T0-220
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily SolderabllP.--.,.-------------'
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B2045

MAXIMUM RATINGS, PER LEG
Rating

Symbol

Value

Unit

VRRM
VRWM
VR

,45

Volts

IF(AV)

10
20

Amps

Peak Repetitive Forward Current Per Diode Leg
(Rated VR, Square Wave, 20 kHz), TC 135'C

IFRM

20

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps
Amp

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR), TC 135'C

=

Total Device

=

Peak Repetitive Reverse Surge Current (2.0 ~s, 1.0 kHz)
Operating Junction and Storage Temperature
Voltage Rate of Change (Rated VA)
RMS Isolation Voltage (t

=1 second, R.H. ,; 30%, TA =25'C)(2)

Per Figure 5
Per Figure 6(1)
Per Figure 7

IRRM

1.0

TJ, Tsta
dvldt

-65to +150

·C

'10000

VI~s

Visol
Vis02
Vis03

4500
3500
1500

Volts

THERMAL CHARACTERISTICS, PER LEG
Maximum Thermal Aesistance, Junction to Case
Lead Temperature for Soldering Purposes: 118" from Case for 5 seconds
(1) UL recognized mounting method is per Figure 6.
(2) Proper strike and creepage distance must be provided.

Preferred devices are Motol':2.0% .

•

en

I>.

ie 100

100
70
SO
30
20

:E

5.

!z
w

a:
a:
::J
u
c
a:

./

f2en

::J

~
~

;;:;

.!±-

2SoC

'--

~5O
ifi 30

TJ = lSOOC
i I :;;" L,..oo'"'

~

20
10
a: 7.0
~ S.O

,

/

;5 O.S
z 0.3
~ 0.2
~ 0.1

I
I

0.1

0.2

/~

25°C

0.4

0.6

O.B

1.0

1.2

1.4

.~

0.2

0.4

0.6

Figure 1. Maximum Forward Voltage'

~

i

~

-

r-

i
IE

5.

!z
w

a: 100
a:
u
W
70
~

::J

1.0
7SoC
0.1
2So

0.001 0

-

.-1

0.01

10

-

~

.

::::i;

40

SO

.....
...........

30

""'- 1'-1-

en
.!!-

Figure 3. Maximum Reverse Current

3-98

II

en

I>.

100°C

w

1.4

1.2

:E

125°C

::J
U

1.0

Figure 2. Typical Forward Voltage

TJ = 1S0°C

10

O.B

vl'o INSTANTANEOUS VOLTAGE (VOLTS)

vl'o INSTANTANEOUS VOLTAGE (VOLTS)

100

"

r- 100°C

~ ~:~
~
W 1.0
z 0.7

/1'

1.0
0.7
O.S
0.3
0.2

@

100°C

g

10
7.0
S.O
3.0
2.0

~
a:

70

:E

TJ .150°

2.0

3.0

5.0 7.0 10
20 30
NUMBER OF CYCLES AT 60 Hz

SO 70

Figure 4. Maximum Surge Capability

Rectifier Device Data

100

MBRF2045CT

TEST CONDITIONS FOR ISOLATION TESTS'
CLIP

MOUNTED
FULLY ISOLATED
PACKAGE

MOUNTED
FULLY ISOLATED
PACKAGE
• -'.

•

O.107"MIN

LEAD1

~~''''''!
Figure 5. Clip Mounting Position
for Isolation Test Number 1
~

Figure 6. Clip Mounting Position
for Isolation Test Number 2

Figure 7. Screw Mounting Position
for Isolation Test Number 3

Measurement made between leads and fleatsink WIth all leads shorted together.,

MOUNTING INFORMATION"
~ 4-40SCREW

CLIP

~ PLAIN WASHER

iI/Ii~

~> ~ ,~"

~-~

~ COMPRESSION WASHER

I

NUT

I
I

~ '.:::::~,
~.:'
': ~ ;; ;;::x... HEATSINK
Sb. Clip-Mounted

8a. Screw-Mounted
Figure S. Typical Mounting Techniques

Laboratory tests on a limited number of samples Indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in • Ibs is sufflcient to provide
.
maximum power dissipation capabihty. The compression washer helps to maintain a constant pressure on the package over time and during large tempera,ture excursions.
Destructive laboratory tests show that using a he)! head 4-40 screw, without washers. and applying a torque in excess of 20 in • Ibs will cause the plastic to crack around the mounting
hole, resulting in a loss of isolation capabIlity.
Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in • lbs WIthout adversely affecting the package. However, in order to positively ensure
the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in • Ibs of mounting torque under any mounting conditions.
··For more information about mounting power semiconductors see Application Note AN1040.

Rectifier Device Data

3-99

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA.

SWITCHMODETM

MBRF2060CT

Schottky Power Rectifiers

Motorola Preferred Device

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a
large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
for use as rectifiers in very low-voltage, high-frequency switching power supplies,
.
free wheeling diodes and polarity protection diodes.
•
•
•
•
•
•
•
•
•
•

SCHOTIKY BARRIER
. RECTIFIERS
20 AMPERES
60 VOLTS

Highly Siable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dV/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL94, Vo at 1/8"
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369(1)

20-1 :: ::

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B2060

l~
3

CASE 2210-02
ISOLATED TO-220

MAXIMUM RATINGS, PER LEG
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified FOlWard Current
(Rated VR), TC t33°C

=

Peak Repetitive FOlWard Current
(Rated VR. Square Wave, 20 kHz). TC

Symbol

Value

Unit

VRRM
VRWM
VR

60

Volts

.IF(AV)

10
20

Amps

IFRM

20

Amps

·IFSM

150

Amps
Amp

Total Device

=133°C

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave. single phase. 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 1lS. 1.0 kHz)
Operating Junction and Storage Temperature
Voltage Rate of Change (Rated VR)
RMS Isolation Voltage (t = 1.0 second, R.H.

S;

30%. TA = 25°C)(2)

Per Figure 3
Per Figure 4(1)
Per Figure 5

IRRM

0.5

TJ, Tstg
dvldt

-65to +150

°c

10000

VlIlS

VisOI
Vis02
Vis03

4500
3500
1500

Volts

THERMAL CHARACTERISTICS, PER LEG
Maximum Thermal ReSistance, Junction to Case
Lead Temperature for Soldering Purposes: lIS" from Case for 5 Seconds
(1) UL Recognized mounting method is per Figure 4.
(2) Proper strike and creepage distance must be provided.
Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

3-100

Rectifier Device Data

MBRF2060CT

ELECTRICAL CHARACTERISTICS, PER LEG
Characteristic

Symbol

Maximum Instantaneous Forward Voltage (3)
(iF 10 Amp, TC 25'C)
(iF 10 Amp, TC 125'C)
(iF 20 Amp, T C 25'C)
(iF 20 Amp, TC 125'C)

vF

Maximum Instantaneous Reverse Current (3)
(Rated DC Voltage, T C 25°C)
(Rated DC Voltage, TC 125'C)

iR

=
=
=
=

=
=
=
=

Max

Unit

Volts
0.85
0.75
0.95
0.85

=
=

rnA
0.15
t50

(3lPuls. Test: Pulse Width = 300 ~s, Duty Cycle ~ 2.0"10

u;-

n.
:::;;

50

....
z
w

20

<.>

10

II:
II:
:::J

c

1=1= TJ = IS0'C

I

::'>.

tSO'c."

"

/

y
~ 7100'C_

II:

;!
II:

5.0
TJ - 2S'C

0
"-

en 3.0

/

:::J

0

/

W

Z

/

II:
:::J

<.>

-

1--1=~ TJ=100'C

1.0

w

fQ

/

>wW

/

II:

en
~

~

0.1

J

z~ 1.0
~

.!f.

1

0.01

0.5
0.1

0.2
0.3
0.4
O.S
0.6
0.7
0.8
vF, INSTANTANEOUS VOLTAGE (VOLTS)

0.9

Figure 1. Typical Forward Voltage Per Diode

Rectifier Device Data

1.0

~ TJ = 25'C
20

40
60
80
100
VR, REVERSE VOLTAGE (VOLTS)

120

Figure 2. Typical Reverse Current Per Diode

3-101

MBRF2060CT

TEST CONDITIONS FOR ISOLATION TESTS"
MOUNTED
FULLY ISOLATED

Figure 3. Clip Mounting Position
for Isolation Test Number 1

Figure 4. Clip Mounting Position
for Isolation Test Number 2

Figure 5. Screw Mounting Position
for Isolation Test Number 3

* Measurement made between leads and heatsink Wlth all leads shorted together.

MOUNTING INFORMATION""
4-40 SCREW

~CLlP

~

.

~~

fir:
I

~,

~

,.;;:-

~.:'

':~;;~ HEATSINK

6a. Screw-Mounted

6b. Clip-Mounted
Figure 6. Typical Mounting Techniques

Laboratory tests on a limited number of samples indicate, when uSIng the screw and compression washer mountmg technique, a screw torque of 6 to 8 in • Ibs is sufficient to provide
maximum power dIssipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of20 In • Ibs will causa the plastiC to crack around the mounting
hole, resulting in a loss ot isolation capability.
Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in • Ibs without adversely affecting the package. However, in order to positively ensure
the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in • Ibs of mounting torque under any mounting conditions.
UFor more information about mounting power semiconductors see Application Note ANt 040

3-102

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

SWITCHMODETM
Schottky Power Rectifiers

MBRF20100CT
Motorola Preferred Device

The SWITCH MODE Power Rectifier employs the Schottky Barrier principle in a
large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
for use as rectifiers in very low-voltage, high-frequency switching power supplies,
free wheeling diodes and polarity protection diodes.
•
•
•
•
•
•

Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dvldt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients

•
•
•
•

Guardring for Stress Protection
Epoxy Meets UL94, Vo at 1/8"
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369(1)

2

a---1

::

SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
100 VOLTS

: 1
3

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B20100

CASE 2210-02
ISOLATED TO-220

MAXIMUM RATINGS, PER LEG
Rating

Symbol

Value

Unit

VRRM
VRWM
VR

100

Volts

IF(AV)

10
20

Amps

Peak Repetitive Forward Current
(Rated YR. Square Wave, 20 kHz), TC; 133°C

IFRM

20

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

150

Amps
Amp

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR), TC; 133°C

Total Device

Peak Repetitive Reverse Surge Current (2.0 I's, 1.0 kHz)
Operating Junction and Storage Temperature
Voltage Rate of Change (Rated VR)
RMS Isolation Voltage (t ; 1.0 second, R.H. ,; 30%, TA ; 25 o C)(2)

Per Figure 3
Per Figure 4(1)
Per Figure 5

IRRM

0.5

TJ, Tstg

-65to+150

°c

dvldt

10000

V//ls

Vis01
Vis02
Visa3

4500
3500
1500

Volts

THERMAL CHARACTERISTICS, PER LEG
Maximum Thermal Resistance -

Junction to Case

Lead Temperature for Soldering Purposes: 1/8" Irom Case for 5 Seconds
(1) UL Recognized mounting method is per Figure 4.
(2) Proper strike and creepage distance must be provided.

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

Rectifier Device Data

3--103

MBRF20100CT

ELECTRICAL CHARACTERISTICS, PER LEG
Symbol

Characteristic

Maximum Instantaneous Forward Voltage (3)
(iF =10 Amp, TC =25°C)
(iF =10 Amp, TC =125°C)
(iF =20 Amp, TC =25°C)
(iF =20 Amp, TC =125°C)

vF

Maximum Instantaneous Reverse Current (3)
(Rated DC Voltage, TC =25°C)
(Rated DC Voltage, TC =125°C)

iR

Max

0.B5
0.75
0.95
0.B5
0.15
150

Unit

Volls

mA

(3) Pulse Test: Pulse W,dth = 300 ~s, Duty Cycle ~ 2%.

U>
Q.

::;;

50

>z

20

~

w

a:
a:
:::>
'-'
c
a:

150"C,
-

~

./ / ' ./

to

100°C ~

~

~ 5.0
a:
0
LL
en 3.0

1/ '1/

/

:::>
0
w

1/

z
z~ 1.0

/

/

1/

TJ=25°C

r--

/

10

~a:

a:
:::> 1.0
u

f-I-

I=~ TJ = 100°C

w
~

IS!

~ 0.1

1/

I

~
en

;;:; 0.5
.~

0.1

0.2
0.3
0.4
0.5
0.6
0.7
0.8
vF, INSTANTANEOUS VOLTAGE (VOLTS)

0.9

Figure 1. ·Typlcal Forward Voltage Per Diode

3-104

1.0

20

40
60
80
100
VR, REVERSE VOLTAGE (VOLTS)

120

Figure 2. Typical Reverse Current Per Diode

Rectifier Device Data

MBRF2010oel

CLIP

MOUNTED
FULLY ISOLATED

Figure 3. Clip Mounting Position
for Isolation Test Number 1

Figure 4. Clip Mounting Position
for Isolation Test Number 2

Figure 5. Screw Mounting Position
for Isolation Test Number 3

* Measurement made between leads and heatsink with an leads shorted together.

MOUNTING INFORMATION""
~ 4-40SCREW

CLIP

~ PLAIN WASHER

~. ~
'~HEATSINK

~ COMPRESSION WASHER

I

NUT

I
I

~.

'.::::-

~.
~.:.:~;:;:.:x:... HEATSINK

6a. Screw-Mounted

6b. Clip-Mounted
Figure 6. Typical Mounting Techniques

Laboratory tests on a limited number of samples Indicate, when using the screw and compression washermounllng technique, a screw torque of 6 t08 in • Ibs Is suHlcient to provide
maximum' power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in • Ibs will cause the plastic to crack around the mounting
hole. resulting in a loss of isolation capability.
Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in • Ibs without adversely affecting the package. However, in order to positively ensure
the package Integnty of the fully isolated device, Moto~a does not recommend exceeding 10 in • Ibs of mounting torque under any moun~ng conditions.
UFor more infonnatJon about mounting power semiconductors see Application Note AN1040.

Rectifier Device Data

3-105

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

SWITCHMODETM
Schottky Power Rectifiers

MBRF20200CT
Mot~rola Preferred Device

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a
large area metal-to--silicon power diode. State-of-the-art geometry features
epitaxial construction with oxi(je passivation and metal overlay contact. Ideally suited
for use as rectifiers in verY low-voltage, high-frequency switching power supplies,
free wheeling diodes and polarity protection diodes.
•
•
•
•
•
•
•
•
•
•

Highly Stable Oxide Passivated Junction
Very Low FOlWard Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL94, Vo at 1/8"
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369

SCHOTTKY BARRIER
RECTIFIER
20 AMPERES
150 and 200 VOLTS

Mechanical Characteristics
CASE 221 D--D2
• Case: Epoxy, Molded
ISOLATED T0-22D
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable!-------------'
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B20200
MAXIMUM RATINGS, PER LEG
Rating

Symbol

Value

Unit

VRRM
VRWM
VR

200

Volts

IF(AV)

10
20

Amps

Peak Repetitive Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz) T C 90°C

IFRM

20

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps
Amp

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC 125°C

Per Leg
Per Package

=

=

Peak Repetitive Reverse Surge Current (2.0 I1s, 1.0 kHz)
Operating Junction Temperature and Storage Temperature
Voltage Rate of Change (Rated VR)

IRRM

1.0

TJ, Tstg

-65 to +150

°c

dvldt

10,000

Vll1s

Preferred dovices are Motorola recommended choices for future use and besl overall value.

Rev!

3-106

Rectifier Device Data

MBRF20200CT

THERMAL CHARACTERISTICS, PER LEG
Rating
Thermal Resistance -

Value

Junction to Case

3.5

ELECTRICAL CHARACTERISTICS, PER LEG
Maximum Instantaneous Forward Voltage (1)
(iF = 10 Amp, TC = 25°C)
(iF = 10 Amp, TC = 125°C)
(iF = 20 Amp, T C = 25°C)
(iF = 20 Amp, TC = 125°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, T C = 25°C)
(Rated dc Voltage, T C = 125°C)

iR

Volts
0.9

O.B
1.0
0.9
mA
1.0
50

DYNAMIC CHARACTERISTICS, PER LEG

I

Capacitance (VR = -5.0 V, TC = 25°C, Freq. = 1.0 MHz)

(1) Pulse Test: Pulse Width =

300~,

Duty Cycle

500

pF

~2%

100

10.000

70

-

TJ= 1 DoC
1,000

50

/.'l /

ii:

I'/i /
/i r; I
'I) /

:::;;

TJ = 150°C---I

~

>Z
W

cr
cr 20

::J
U
C

cr

TJ = 125°C:-;'

~
cr 10

'I

/

'"0

I

I

' - -I" III
I /

Z

~

'";0;

/ ,,/ f

Jf.

0.2

II I II

I

/

V

2:

100

a:
a:

10

z>w

::J
U

-

J = 1U

0[;

W

'">a:w
If.

I

W

TJ = 125°C

-

w
cr

0

u..
::J

<"

0.1

_100°C

TJ = 5°C
0.01

T =25°

o

20

40

60

80

100

120

140

160

180

200

VR, REVERSE CURRENT (VOLTS)

Figure 2. Typical Reverse Current (Per Leg)

0.4
0.6
0.8
VI'> INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage (Per Leg)

Rectifier Device Data

3-107

MBRF20200CT

TEST CONDITIONS FOR ISOLATION TESTS"
MOUNTED
FULLY ISOLATED

Figure 4. Clip Mounting Position
for Isolation Test Number 2

Figure 3. Screw or Clip Mounting Position
for Isolation Test Number 1

Figure 5. Screw Mounting Position
for Isolation Test Number 3

" Measurement made between leads and heatsink with all leads shorted togethE!r.

MOUNTING INFORMATION""
4-40 SCREW

~CLlP

~

/"

,/"

~,
"

.

~.:-'

~

'~ HEATSINK

~~

,

~
I

. ~ COMPRESSION WASHER

I

~

~
,;:::'
;',
~

"'-'::',
,,~ ; ; ~ HEATSINK

NUT

Figure 6a. Screw-Mounted

Figure 6b. Clip-Mounted

Figure 6. Typical Mounting Techniques
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in • Ibs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in • Ibs
will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability,
Additional tests on slotted 4--40 screws indicate that the screw slot fails between 15 to 20 in • Ibs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding
10 in ·Ibs of mounting torque under any mounting conditions.
""For more information about mounting power semiconductors see Application Note AN1040.

3-108

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

SWITCHMODETM
Schottky Power Rectifiers

MBRF2545CT
Motorola Preferred Device

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a
large area metal-to--silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
for use as rectifiers in very low-voltage, high-frequency switching power supplies,
free wheeling diodes and polarity protection diodes.
•
•
•
•
•
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS
25 AMPERES
45 VOLTS

Highly Stable Oxide Passivated Junction
Very low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dvldt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets Ul94, Vo at 1/8"
Electrically Isolated. No Isolation Hardware Required.
Ul Recognized File #E69369(1)

20-1 :: ::

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal leads are Readily Solderable
• lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B2545

CASE 221 0-02
ISOLATED TO-220

MAXIMUM RATINGS, PER lEG
Rating

Symbol

Value

Unit

VRRM
VRWM
VR

45

Volts

IF(AV)

t2.5
25

Amps

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC =125°C

IFRM

25

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps
Amp

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR), TC =125°C

Total Device

Peak Repetitive Reverse Surge Current (2.0 J!S, 1.0 kHz)
Operating Junction and Storage Temperature
Voltage Rate of Change (Rated VR)
RMS Isolation Voltage (t = 1.0 second, R.H. " 30%, TA =25o C)(2)

Per Figure 3
Per Figure 4(1)
Per Figure 5

IRRM

1.0

TJ, TstQ
dvldt

-65to+150

°C

10000

V/~s

Visol
Viso2
Viso3

4500
3500
1500

Volts

THERMAL CHARACTERISTICS, PER LEG
Maximum Thermal Resistance, Junction to Case
Maximum Lead Temperature lor Soldering Purposes: 1/8" from Case for 5 Seconds
(1) UL recognized mounting method is per Figure 4.

(2) Proper strike and creepage distance must be provided.

Preferred deVices are Motorola recommended choices for future use and best overall value.

Rev I

Rectifier Device Data

3-109

MBRF2545CT

ELECTRICAL CHARACTERISTICS, PER LEG
Symbol

Max

Unit

Maximum Instantaneous Forward Voltage (3)

Characteristic
(iF = 12.5 Amps, T C = 25'C)
(iF = 12.5 Amps, TC = 125'C)

vF

0.7
0.62

Volts

Maximum Instantaneous Reverse Current (3)

(Rated DC Voltage, T C = 25'C)
(Rated DC Voltage, T C = 125'C)

iR

0.2
40

rnA

(3) Pulse Test: Pulse Width =300 lIS, Duty Cycle S2.0%.

fF

::;

~

!Z

100

100
70
50
TJ = 1~5'C

~ 20

13
o

~u.O

...... 17

10
7.0

zw
c:r:
c:r: 1.0
::>
u
w
CI)
c:r:
w 0.1
>
w
a:
Ii:
- 0.01

100'C

5.0
2.0

'L

~ 1.0

@ 0.7
z 0.5
;'S
z
;'S 0.2
~ 0.1
.~

=

=

--

--

J = 12~'C

10 'C
85'C

25'C

- -

!--

0.001

0

0.2
0.6
0.8
0.4
VF,INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage, Per Leg

3-110

1.0

10

20
30
40
VR, REVERSE VOLTAGE (VOLTS)

50

Figure 2. Typical Reverse Current, Per Leg

Rectifier Device Data

MBRF2545CT

TEST CONDITIONS FOR ISOLATION TESTS"
CLIP

MOUNTED
FULLY ISOLATED

MOUNTED
FULLY ISOLATED
PACKAGE

0.107" MIN

_~~L

M~:',,:,!
Figure 3. Clip Mounting Position
for Isolation Test Number 1

Figure 4. Clip Mounting Position
for Isolation Test Number 2

Figure 5. Screw Mounting Position
for Isolation Test Number 3

* Measurement made between leads and healslnk with all leads shorted together.

MOUNTING INFORMATION""
4-40 SCREW

~,
"

.---.---

~.>

'$:

~

HEATSINK

~

.

I

~ COMPRESSION WASHER

I

~'"
~,

~

-~

~.:-

-:~;::;::~ HEATSINK

NUT

6a. Screw-Mounted

6b. Clip-Mounted
Figure 6. Typical Mounting Techniques

Laboratory tests on a limited number of samples Indicate, when uSing the screw and compression washer mounting technique, a screw torque of 6 to 8 in . Ibs IS suffiCient to provide
maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and durmg large temperature excursions.
Destructive laboratory tests show that usmg a hex head 4-40scraw, without washers, and applYing a torque in excess of 20 in • lbs will cause the plastic to crack around the mounting
hole, resulting in a loss of isolabon capablhty.
Additional tests on slotted 4-40 screws Indicate that the screw slot fails between 15 to 20 in • Ibs WithOut adversely affectmg the package. However, In order to pOSitively ensure
the package Integnty of the fuUy isolated device, Motorola does not recommend exceedmg 10 in . Ibs of mounting torque under any mounting conditions.
UFor more Information about mounting power semiconductors see Apphcation Note AN1040.

Rectifier Device Data

3-111

•

,

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

SWITCHMODETM
Schottky Power Rectifiers

MBRF745
Motorola Preferred Device

The SWITCH MODE Power Rectifier employs the Schottky Barrier principle in a
large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
for use as rectifiers in very low-voltage, high-frequency switching power supplies,
free wheeling diodes and polarity protection diodes.

•

•
•
•
•
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS
7.5 AMPERES
45 VOLTS

Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL94, VO at 1/8"
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369(1)

,/

10-1+--0 2

Mechanical Characteristics
2
• Case: Epoxy, Molded
CASE 221 E-D1
• Weight: 1.9 grams (approximately)
ISOLATED TO-220
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily SOlderabl"-_ _ _ _ _ _ _ _ _---'
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B745
MAXIMUM RATINGS
Symbol

Value

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Vollage

VRRM
VRWM
VR

45

Volls

Average Rectified Forward Current (Rated VR), TC = 105°C

IF(AV)

7.5

Amps

Peak Repelitive Forward Current (Rated VR, Square Wave, 20 kHz), T C = 105°C

IFRM

15

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps
Amp

Rating

Peak Repetitive Reverse Surge Current (2.0 j.ls, 1.0 kHz)
Operating Junction and Storage Temperalure
Voltage Rate of Change (Raled VR)
RMS Isolalion Voltage (I = 1 second, R.H. ,;; 30%, TA = 25°C)(2)

Per Figure 3
Per Figure 4(1)
Per Figure 5

IRRM

1.0

TJ, Tstg

-65to+150

°c

dvldl

10000

V/j.lS

Vis01
Vis02
Viso3

4500
3500
1500

Volts

RWC

4.2

°C/W

TL

260

°C

THERMAL CHARACTERISTICS
Maximum Thermal Resislance, Junction 10 Case
Lead Temperature for Soldering
Purposes: 1ISH from Case for 5 Seconds
(1) UL Recognized mounting melhod is per Figure 4.
(2) Proper strike and creepage distance must be provided.

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

3-112

Rectifier Device Data

MBRF745

ELECTRICAL CHARACTERISTICS
Symbol

Characteristic
Maximum Instantaneous Forward Voltage (3)
(iF 15 Amp, TC 25'C)
(iF 15 Amp, TC 125'C)
(iF 7.5 Amp, TC 125'C)

vF

Maximum Instantaneous Reverse Current (3)
(Rated DC Voltage, TC 25'C)
(Rated DC Voltage, TC 125'C)

iR

=
=
=

=
=
=

1e

!

~a:
a:

::::>

<.>

=300 ~s, Duty Cycle s 2.0%.

100

30
20

TJ = 125'C

10

17

".".

V .......
~

......

-~

1

10

/

~ 0.1

25'C

~

/ 1/

>!O
1
z
>!O 0.7
en
~ 0.50.2

.!E

11/
0.4

0.6
0.8
1
iF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

Rectifier Device Data

75'C

<.>
w

'/

/. Z

53
z

......

I

l00'C

a:

/. I '

en

~

125'C

::::>

~
a;;

~

TJ = 150'C

~

75'C

o
a:

::::>

mA
0.1
15

50

::2

Unit
Volts

0.64
0.72
0.57

=
=

(3) Pulse Test: Pulse Width

Max

1.2

25'C

0.01

0.001 0

10

20
30
VR, REVERSE VOLTAGE (VOLTS)

-

;"

40

50

Figure 2. Typical Reverse Current

3-113

•

MBRF745

MOUNTED
FULLY ISOLATED

Figure 3. Clip Mounting Position
for Isolation Test Number 1

Figure 4. Clip Mounting Position
for Isolation Test Number 2

Figure 5. Screw Mounting Position
for Isolation Test Number 3

• Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION""
4-40 SCREW

CLIP

/'

~/'

~.

~.:>

.' ~
.~ HEATS INK
~ COMPRESSION WASHER

I

I
I

~.

~

.:¥;;

NUT

6a. Screw-Mounted

~;:::-

~:~

... HEATSINK

6b. Clip-Mounted
Figure 6. Typical Mounting Techniques

Laboratory tests on a limited number of samples indicate. when uSing the screw and compressIon washer mountIng technique, a screw torque of 6 to 8 in • Ibs is sufficient to provide
maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using ahex head4-W screw, without washers, and applying a torque In excess of 20 In • Ibs will cause the plastic to crack around the mounting
hole, resulting in a loss of isolation capability.
Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in • Ibs without adversely affecting the package. However, In order to positively ensure
the package integrity of the fully Isolated device, Motorola does not recommend exceeding 10 in' Ibs of mounling torque under any mounting conditions.
"For more lnfonnalion about mounting power semiconductors see Appllcatlon Note AN1040.

3-114

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

SWITCHMODETM
Schottky Power Rectifiers

MBRF1045
Motorola p,.terrad Device

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a
large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
for use as rectifiers in very low-voltage, high-frequency switching power supplies,
free wheeling diodes and polarity protection diodes.
•
•
•
•
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
45 VOLTS

Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
High Junction Temperature Capability
High dvldt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL94, VO at 1/8"
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369(1)

•

1<>-1+-0 2

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead Temperature for Soldering Purposes: 260 c C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: Bl045

CASE 221 E-ol
ISOLATED T0-220

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR), TC

=135a C

Symbol

Value

Unit

VRRM
'VRWM
VR

45

Volts

IF(AV)

10

Amps

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 135a C

IFRM

20

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

150

Amps
Amp

Peak Repetitive Reverse Surge Current (2,0 I's, 1.0 kHz) Figure 6
Operating Junction and Storage Temperature
Voltage Rate of Change (Rated VR)
RMS Isolation Voltage (t = 1 second, R.H. ,,30%, TA =25 a C)(2)

Per Figure 8
Per Figure 9(1)
Per Figure 10

IRRM

1,0

TJ, Tstg

-65to+150

ac

dvldt

10000

V/~s

Visol
Vis02
Vis03

4500
3500
1500

Volts

THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case
L~ad

Temperature for Soldering Purposes: 118n from Case for 5 seconds

(1) UL Recognized mounting method is per Figure 9.
(2) Proper strike and creepage distance must be provided,

Preferred devices are Motorola recommended choices for future use and best overafl value.

Rev 1

Rectifier Device Data

3-115

I

MBRF1045

ELECTRICAL CHARACTERISTICS
Symbol

Characteristic
Maximum Instantaneous Forward Voltage (3)
(iF = 20 Amp, T C = 25'C)
(iF = 20 Amp, TC = 125'C)
(iF = 10 Amp, TC = 125'C)

vF

Maximum Instantaneous Reverse Current (3)
(Rated DC Voltage, TC = 25'C)
(Rated DC Voltage, TC = 125'C)

iR

Unit

Max

Volts
0.84
0.72
0.57
mA

,

0.1
15

(3) Pulse Test: Pulse Width = 300 lIS. Duty Cycle S2.0% .

•

ii)

!l!l

~

ii)

100
70

a:~ ~

100'C

20

i3

100
70
50
Izw 30
a: 20
a:
10
::::>
<.:>
7
0
5
a:
3
2
0
u.
en 0.71
::::>
0
O.S
zw 0.3
j5 0.2
Q.

:::E

TJ-1S0'C

:;..-

IL

10

Ii

f

2S'C

rr-

,

z

I

0.2

.~

0.6

0.4

0.8

1.2

1.4

;;:;

0.2

0.6

0.4

.f

:::E

~

12S'C

IZ

100'C

::::>

w
a: 100
a:
<.:>

25'.-.-

w

70

:;;:
~
::c

SO

l(

75'C

.....-

.\

" "-

20
30
VR, REVERSE VOLTAGE (VOLTS)

40

Figure 3. Maximum Reverse Current

3-116

I

I'

.........

W

Q.

30

i"-

~

10

1.4

TJ = 125'C, VRRM MAY BE APPLIED
BETWEEN EACH CYCLE OF SURGE

'"<
:::E

0.001 0

1.2

II I

Q.

TJ= 150'C

0.8

Figure 2. Typical Forward Voltage

ii)

-

=rr-

Vf. INSTANTANEOUS VOLTAGE (VOLTS)

200

-

100'C:

,

Figure 1. Maximum Forward Voltage

100

r- f-

I.

z
j5 0.1
en

vf.INSTANTANEOUS VOLTAGE (VOLTS)

~lC

.....:; v

~

~
W

1
0.7
0.5
~ 0.3
j5 0.2
~ 0.1

TJ=lS0'C

~

3

-

7 10
20 30
NUMBER OF.CYCLES AT 60 Hz

1-150 70

100

Figure 4. Maximum Surge Capability

Rectifier Device Data

MBRF1045

HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction. it is not subject to junction diode
forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an
ideal diode in parallel with a variable capacitance. (See
Figure 5.)
Rectification efficiency measurements show that operation
will be satisfactory up to several megahertz. For example.
relative waveform rectification efficiency is approximately 70
percent at 2.0 MHz. e.g .• the ratio of dc power to RMS powerin
the load is 0.28 at this frequency. whereas perfect rectification
would yield 0.406 for sine wave inputs. However. in contrast to
ordinary junction diodes. the loss in waveform efficiency is not
indicative of power loss; it is simply a result of reverse current
flow through the diode capacitance. which lowers the dc
output voltage.

1500
1000
~

-

~AXIMUM

700

w

~
~

""'-.l'l.

500

""'~I'-

13

0:
<§

TYPICAL
300

I'.
I" I......

c5

200
150
0.05 0.1

1'.,'
0.2

0.5
10
VR. REVERSE VOLTAGE (VOLTS)

20

Figure 5. Capacitance

+150 V. 10 mAde
2.0 k.Q

VCC

JL
----I f--

12V

12Vde

100
2N2222

2.0 fLS
1.0 kHz
CURRENT
AMPLITUDE
ADJUST
0-10AMPS

100
CARBON

Figure 6. Test Circuit for dv/dt and Reverse Surge Current

Rectifier Device Data

3-117

50

•

MBRF1045

TEST CONDITIONS FOR ISOLATION TESTS"
CLIP

MOUNTED
FULLY ISOLATED
LEADS

HEATSINK
0.110"MIN

•

Figure 8. Clip Mounting Position
for Isolation Test Number 2

Figure 7. Clip Mounting Position
for Isolation Test Number 1
~

Figure 9. Screw Mounting Position
for Isolation Test Number 3

Measurement made between leads and healsink with aU leads shorted together.

MOUNTING INFORMATION""
4-40 SCREW

10a. Screw-Mounted
Figure 10. Typical Mounting Techniques
Laboratory lests on a hmited number of samples Indicate, when uSing the screw and compression washer mounting technique, a screw torque of 610 8 In • Ibs IS sufficient to provide
maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over lime and during large temperature excursions.
Destructive laboratory tests show that uSing a hex head 4-40 screw, wrlhoutwashers, and applYing a torque In excess of 20 in . Ibs will cause the plastlctocrackaround the mounting
hole, resulting In a loss of Lsolation capability.
Additional tests on slotled 4-40 screws indicate that the screw slot falls between 15 to 20 Ln • Ibs without adversely affecting the package. However, In order to positively ensure
the package Lntegrlty of the fully Isolated device, Motorola does not recommend exceeding 10 in • Ibs of mounting torque under any mounting condLtLons.
UFor more Lnformation about mounting power semiconductors see Application Note AN1040.

3-118

Rectifier Device Data

MOTOROLA

-

MBR3035PT
MBR3045PT

SEMICONDUCTOR

TECHNICAL DATA

•

MBR3D4SPT Is.
Motorola Preferred Device

Switchmode Power Rectifiers
... using the Schottky Barrier principle with a platinum barrier metal. These state·ol·the·art
devices have the lollowing leatures:

SCHOTTKY BARRIER
RECTIFIERS

Dual Diode Construction - Terminals 1 and 3 May Be Connected For Parallel Operation At
Full Rating
o Guardring for Stress Protection
o Low Forward Voltage
o 150aC Operating Junction Temperature
o Guaranteed Reverse Avalanche
o

Mechanical Characteristics:
Case: Epoxy, Molded
o Weight: 4.3 grams (approximately)
o Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
o Lead Temperature for Soldering Purposes: 260 a C Max. for 10 Seconds
o Shipped 30 units per plastic tube
o Marking: B3035, B3045

30 AMPERES
35 to 45 VOLTS

•

o

"" ::H
3

CASE 3400-01

RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Symbol

Maximum

Unit
Volts

VRRM
VRWM
VR

35
45

Average Rectified Forward Current Per Device
(Rated VR) TC = 105°C
Per Diode

IF(AV)

30
15

Amps

Peak Repetitive Forward Current. Per Diode
(Rated VR, Square Wave, 20 kHz)

IFRM

30

Amps

Nonrepetitive Peak Surge Current
(Surge Applied at rated load conditions
halfwave, smgle phase. 60 Hz)

IFSM

200

Amps

Peak Repetitive Reverse Current, Per Diode
(2.0 I'S, 1.0 kHz) See Figure 6

IRRM

2.0

Amps

MBR3035PT
MBR3045PT

TJ

-65 to +150

°C

Tstg

-65 to +175

°c

Peak Surge Junction Temperature
(Forward Current Applied)

TJ(pk)

175

°c

Voltage Rate of Change (Rated VR)

dv/dt

10000

VII's

Operating Junction Temperature

Storage Temperature

THERMAL CHARACTERISTICS PER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient

ELECTRICAL CHARACTERISTICS PER
Instantaneous Forward Voltage (I)
(IF =20 Amp. TC = 125°C)
(iF =30 Amp. TC = 125°C)
(IF =30 Amp, TC = 25°C)

vF

Instantaneous Reverse Current (1)
(Rated de Voltage. TC = 125°C)
(Rated de Voltage, TC = 25°C)

iR

Volts
0.60
0.72
0.76
mA
100
1.0

(1) Pulse Test Pulse Width = 300 /is, Duty Cycle ~ 2.0%
Rev 2

Rectifier Device Data

3-119

MBR3035PT, MBR3045PT

FIGURE 2 - TYPICAL REVERSE CURRENT

FIGURE 1 - TYPICAL FORWARD VOLTAGE

0
0
0

.

/'/'
/

g

100
TJ

=150°C

ffi
o

-/

B 10

5°C

!--

1000 e

~

TJ = 150°C

,..-

-

125°e

10

~

ill
~

5

-

01

.!i'
25°C

•

001
1

0.2

0.4

0.6

0.8

1.0

12

1.4

20

10

vF. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

~
IpK
I
= 7T (Resistive load)
AVj
I
I

'"
""

20r----,----r---,----,----,----,----,----,

~

Sine Wave

'"

Resistive load

~

--+-----1

~

is

'\

\

.........

."5: \

./ Square Wave

'"~ 10~---+--_,A-~-4~L-~7SL-+_~£f----~--~
'"

i

de

~

~ = 2~ 1/.r;r--:. ~ ~
tv I 1 ""'" ~

100

50

FIGURE 4 - FORWARD POWER DISSIPATION
PER LEG

z

D<.

..,.., ~ ~\

f-- (Capacitive Load)
1
1

40

30

VR. REVERSE VOLTAGE (VOLTS)

FIGURE 3 - CURRENT DERATING PER LEG

80

,..-

75°C

120

140

50~---+~~~~~~~~----+_--_+----~--~

~

'"
160

TC. CASE TEMPERATURE (0C)

~

10

~

20

30

40

IF(AV). AVERAGE FORWARO CURRENT (AMPS)

FIGURE 6 - TEST CIRCUIT FOR REPETITIVE
REVERSE CURRENT

FIGURE 5 - CAPACITANCE

3000
2000

r--....

Vee

.....

:i

n

'"

~

~

1000

~ :~~

%: 700
~ 600

--I

100

I--- 20.,
10kHz
Current
Amphtude

I........

500
400
300
.05

2V

Adjust
0-10 Amps

0.2

0.5

1.0

2.0

5.0

10

20

Carbon

1 DCarbon

r-..
0.1

12Vdc

50

lN5817

VR. REVERSE VOLTAGE (VOLTS)

3-120

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR-_
_ _ _ _ _ _ _ _ _ __
TECHNICAL DATA

SWITCH MODE
Power Rectifier

MBR4045PT

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with
a Platinum barrier metal. This state-of-the-art device has the following features:
• Dual Diode Construction - Terminals 1 and 3 may be connected for Parallel
Operation at Full Rating
• 45 Volt Blocking Voltage
• Low Forward Voltage Drop
• Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns)
• Guaranteed Reverse Avalanche
• 150°C Operating Junction Temperature

SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
45 VOLTS

•

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 30 units per plastic tube
• Marking: B4045

CASE 3400-01

MAXIMUM RATINGS, PER LEG
Symbol

Max

Unit

VRRM
VRWM
VR

45

Volt

IF(AV)

20
40

Amp

Peak Repetitive Forward Current, Per Diode
(Rated VR, Square Wave, 20 kHz) @ TC = 90°C

IFRM

40

Amp

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

400

Amp

Peak Repetitive Reverse Current (2.0 I'S, 1.0 kHz)

IRRM

2.0

Amp

TJ

-65 to +150

Tstg

-65 to +175

'c
'c

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR)
@TC=125'C

Operating Junction Temperature
Storage Temperature
Peak Surge Junction Temperature (Forward Current Applied)
Voltage Rate of Change

Total Device

TJ(pk)

175

'C

dv/dt

10,000

V/IlS

ReJC

1.4

'CIW

THERMAL CHARACTERISTICS, PER LEG

I Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS, PER LEG
Instantaneous Forward Voltage (1)
(iF = 20 Amps, TC = 25'C)
(iF = 20 Amps, TC = 125'C)
(iF = 40 Amps, TC = 25'C)
(iF = 40 Amps, T C = 125'C)

vF

Instantaneous Reverse Current (1)
(Rated DC Voltage, TC = 25'C)
(Rated DC Voltage, TC = 100'C)

iR

Volts
0.70
0.60
0.80
0.75
mA
1.0
50

(1) Pulse Test Pulse WIdth = 300J.1s. Duty CycleS2.0%.

Rev 2

Rectifier Device Data

3-121

MBR4045PT

100

A:

/"
~

•

0

.......: ~

....

l

~
a:
~
~
a:

E=

/

I
.!f.

/

Te;foooe /

h.
Te=25°e

200

300
400
500
600
700
Yf; INSTANTANEOUS FORWARD VOLTAGE ImV)

I

a:
=>
u

Te=150·e

/

Te= 150°C
10

Te= 100°C

.1

0.1

,I

0.D1 0

BOO

I

Figure 1. Typical Forward Voltage

Te = 25°C

I---"r

1

10

1
1
20
30
VR. REVERSE VOLTAGE (VOLTS)

40

50

Figure 2. Typical Reverse Current

10000

if
::;

30

ffi

25

5.
a:
a:

a

20

~
12

15

~"

~

I-

~

SQUAREW~~

10

iR=45V)~

w

iil:
~
100

il:"

1

10
VR. REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance Per Leg

3-122

100

110

DC

\.

'\'\

120
130
140
Te. CASE TEMPERATURE 1°C)

150

Figure 4. Current Derating Per Leg

Rectifier Device Data

160

MOTOROLA

SEMICONDUCTOR--------_ _ _ __
TECHNICAL DATA

SWITCHMODE
Power Rectifier

MBR6045PT

The SWITCH MODE power rectifier employs the use of the Schottky Barrier principle with
a Platinum barrier metal. This state-of-the-art device has the following features:
• Dual Diode Construction - Terminals 1 and 3 may be connected for Parallel
Operation at Full Rating
• 45 Volt Blocking Voltage
• Low Forward Voltage Drop
• Guardring for Stress Protection and High dv/dt Capability
• Guaranteed Reverse Avalanche
• 150°C Operating Junction Temperature
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 30 units per plastic tube
• Marking: B6045

SCHOTTKY BARRIER
RECTIFIER
60 AMPERES
45 VOLTS

2.4

<1

3

CASE 340D-Ol

MAXIMUM RATINGS, PER LEG
Rating

Symbol

Max

Unit

VRRM
VRWM
VR

45

Volt

IF(AV)

30
60

Amp

Peak Repetitive Forward Current, Per Diode
(Rated VR, Square Wave, 20 kHz) @ TC = 90°C

IFRM

60

Amp

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

500

Amp

Peak Repetitive Reverse Current (2.0 I's, 1.0 kHz)

IRRM

2.0

Amp

TJ

-65 to +150

°c

Tstll

-65 to +175

°c

TJ(pk)

175

°C

dvldt

10,000

VII's

ReJC

1.0

"C/W

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR)
@TC=125°C

Operating Junction Temperature
Storage Temperature
Peak Surge Junction Temperature (Forward Current Applied)
Voltage Rate of Change

Total Device

THERMAL CHARACTERISTICS, PER LEG

I Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS, PER LEG
Instantaneous Forward Voltage (1)
(iF = 30 Amps, TC = 25°C)
(iF = 30 Amps, TC = 125°C)
(iF = 60 Amps, TC = 25°C)

vF

Instantaneous Reverse Current (1)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, T C = 100°C)

iR

Volts
0.62
0.55
0.75
mA
1.0
50

(1) Pulse Test: Pulse Width = 300 !lS, Duty Cycle s:2.0%.

Rev2

Rectifier Device Data

..
I

3-123

•

MBR6045PT

1000

1 100

...",

~

=>
u

// /

10

";'

Te = 1000 e

~
~

a:

!:f.

~ /'

Te = 1500 e

15

0.1

Te = 25°e
0.01 0

10

-

20
30
40
VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Reverse Current

3-124

//
150 e

I

0

50

r-t0oietei25oe

/200

300

400

500

600

700

V" INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2. Typical Forward Voltage

Rectifier Device Data

800

MOTOROLA

SEMiCONDUCTOR . . . . . . . . . . . . . . . . . . . . . . . . . ..
TECHNICAL DATA

SWITCHMODE
Power Rectifier

MBR5025L
Motorola Preferred Device

The SWITCHMODE power rectifier employs the use ot'the Schottky Barrier principle with
a Platinum barrier metal. This state-of-the-art device has the following features:
•
•
•
•
•

SCHOTTKY BARRIER
RECTIFIER
LOWvF
50 AMPERES

Very Low Forward Voltage Drop (Max 0.58 V @ 100°C)
Guardring for Stress Protection and High dv/dt Capability (10 Vlns)
Guaranteed Reverse Avalanche
150°C Operating Junction Temperature
Specially Designed for SWITCHMODE Power Supplies with Operating
Frequency up to 300 kHz

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 30 units per plastic tube
• Marking: B5025L

25 VOLTS

30

.1

01.4

II

,IP'
3

CASE 340E-01

MAXIMUM RATINGS
Symbol

Max

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

25

Volts

Average Rectified Forward Current (Rated VR)
TC= 125°C

IF(AV)

50

Amps

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) T C = 90°C

IFRM

150

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

300

Amps

Peak Repetitive Reverse Current (2.0 fls, 1.0 kHz)

IRRM

2.0

Amps

TJ

-65 to +150

°C

TstQ

-65 to +175

°C

TJ(pkl

175

"C

dvldt

10,000

Vips

ReJC

0.75

"C/W

Rating

Operating Junction Temperature
Storage Temperature
Peak Surge Junction Temperature (Forward Current Applied)
Voltage Rate of Change

THERMAL CHARACTERISTICS

I Thermal ReSistance, Junction to Case
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (1)
(iF = 50 Amps, T C = 25°C)
(iF = 50 Amps, T C = 100°C)
(iF = 30 Amps, T C = 25°C)

vF

Instantaneous Reverse Current (1)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 100°C)

iR

Volts
0.62
0.58
0.54
mA
0.5
60

(1) Pulse Test: Pulse Width", 300 flS. Duty Cycle S:2.0%.

Preferred deVices are Motorola recommended choices for future use and best overaU value

Rev 1

Rectifier Device Data

3-125

MBR5025L

1000

......./

•

1~01

~

I)

0.2

~

a:
a:
'-'
w
en
a:
w

:::>

1ii
a:
IE

0.3

I

I

0.4

-

W

100°C- (25°C

Y/
~

V

TJ =150°C

100

IZ

/' 1/

/
TJ

l

~

0.5

10

-WO°C

0.1

25°C

0.01 0

-

vI' INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

10
20
30
VR. REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

Figure 2. Typical Reverse Current

0.6

40

70

60

""

50

........

"-

40
30
20

o

110

"DC

"-

"

130
140
TC, CASE TEMPERATURE (0C)

150

~C

"'"

"\

120

Figure 3. Current Derating, Case

3-126

~ ......

160

~

r--..

M
1~
TA, AMBIENT TEMPERATURE (0C)

.'"

Figure 4. Current Derating, Ambient

Rectifier Device Data

160

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

Switchmode
Power Rectifiers

MBR3035WT
MBR3045WT

· .. using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art
devices have the following features:
• Dual Diode Construction - Terminals 1 and 3 May Be Connected For Parallel Operation At
Full Rating
• Guardring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Guaral)teed Reverse Avalanche
• Popular TO-247 Package

~:r2'4

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 30 units per plastic tube
• Marking: B3035, B3045

MBR3045WT Is a
Motorola Preferred Device

SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
35-45 VOLTS

~,~~,
TO-247AC

MAXIMUM RATINGS
Symbol

Rating

Unit

3035WT 3045WT

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 105'C

MBR

VRRM
VRWM
VR
Per Device
Per Diode

35

45

Volts

IF(AV)

30
15

Amps

Peak Repetitive Forward Current, Per Diode
(Rated VR, Square Wave, 20 kHz)

IFRM

30

Amps

Nonrepetitive Peak Surge Current
ISurge Applied at rated load conditions
halfwave, single phase, 60 Hz)

IFSM

200

Amps

Peak Repetitive Reverse Current, Per Diode
(2.0 p.s, 1.0 kHz) See Figure 6

IRRM

2.0

Amps

TJ

-65to +150

'c

Tstg

-65to +175

'C

Peak Surge Junction Temperature
(Forward Current Applied)

TJ(pk)

175

'c

Voltage Rate of Change (Rated VR)

dv/dt

10000

V//ls

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS (Per Diode)
Thermal Resistance - Junction to Case
- Junction to Ambient

1.4
40

ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (1)
(iF = 20 Amp, TC = 125'C)
(iF = 30 Amp, TC = 125'C)
(iF = 30 Amp, TC = 25'C)

vF

Instantaneous Reverse Current 11)
(Rated dc Voltage, TC = 125'C)
(Rated dc Voltage, TC = 25'C)

iR

(1) Pulse Test: Pulse Width

= 300 I'S,

Volts
0.6
0.72
0.76
mA
100
1.0

Duty Cycle'" 2.0%.

Rev 1

Rectifier Device Data

3-127

•

I

MBR3035WT, MBR3045WT

~

100

~
>-

15

~

ac

50
30
20

100
/'/'

«

.s
>-

1,/

10

~
a:

TJ

!2

•

l00'C

::>
u
w
In
a:

2S'C

@

7S'C

~

0.5
0.3
0.2

.!:? 0.1

-

~

a

0.2

0.4
0.6
0.8
1
1.2
vF. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

0.1

1.4

:---

10

:PK =
AV,

15

11'

~
ill
is

! 10~--1---~~~~~~~~

./ SOUARE WAVE

c

I

60

~V

I

!?

I

80

100
120
TC. CASE TEMPERATURE ('C)

~

~

I

I

:;;:
160

140

~
;E

10
20
30
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 4. Forward Power Dissipation (Per Leg)

Figure 3. Current Derating (Per Leg)
3000
2000

VCC 12 Vde

"'~

z~ 1000

C'S

U

900
800
700
600
500
400
300
0.05

I--

100
2p.s

CURRENT
AMPLITUDE
ADJUST
(HOAMPS

"-

"

0.2

0.5
1
2
5
10
VR. REVERSE VOLTAGE (VOLTSI

Figure 5. Capacitance

3-128

n2V

--l

1kHz

0.1

r'I'"i''i'~"
2kfl .

...............

~

~

~~--1---~

~

~ l\.\ de
/ fry.....:,
~
I-- (CAPACITIVE LOAD) ~ = 20. 10. 5
......, ~
a

__

a:

"l-.

~

50

SINE WAVE
RESISTIVE LOAD

z
o

(RESISTIVE LOAO)
I
I

" .""-'" .'< \

10

40

S
20r---.----.---.r---.----.----r---.---~
a;.

~
\

"

20
30
VR. REVERSE VOLTAGE (VOLTS)

Figure 2. Typical Reverse Current

20

i:;;:

~

-

2S'C

!?

1?

-

0.01

ac
~

...... r-

.IF

Figure 1. Typical Forward Voltage

l~

12S'C

l:!
a:

,

150'C

In

~
~

-

15O"C

r-

z

a:

~

=== ~TJ

10

20

"'"

50

CARBON
~

1 CARBON
lN5817

Figure 6. Test Circuit For Repetitive Reverse Current

Rectifier Device Data

40

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Advance Information
SWITCHMODETM Power Rectifier

MBR4015LWT
Motorola Preferred Device

· .. using the Schottky Barrier principle this state-of-the-art device is
dedicated to the ORing function in paralleling power supply and has the
following features:
•

SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
15 VOLTS

Dual Diode Construction - Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating

•

15 Volt Blocking Voltage

•

Very Low Forward Voltage Drop

•

Guardring for Stress Protection and High dv/dt Capability

•

Guaranteed Reverse Avalanche

•

150°C Operating Junction Temperature

II

Mechanical Characteristics
•

I

Case: Epoxy, Molded

• Weight: 4.3 grams (approximately)
•

Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable

•

Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

•

Shipped 30 Units Per Plastic Tube

•

Marking: B4015L

3
CASE 340F-Il3
T0-247AC

MAXIMUM RATINGS
Symbol

Max

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

15

Volt

Average Rectified Forward Current - Per Diode
-Per Device
(Rated VR) @ T C 125°C

IF(AV)

20
40

Amp

Peak Repetitive Forward Current, Per Diode
(Rated VR, Square Wave, 20 kHz) @ TC 90°C

IFRM

40

Amp

Non Repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

400

Amp

Peak Repetitive Reverse Current (2.0 ~, 1.0 kHz)

IRRM

2.0

Amp

TJ

-65 to +150

°C

Tstg

-65 to +150

°C

TJ(pk)

150

"C

dv/dt

10000

V/Jls

=

=

Operating Junction Temperature
Storage Temperature
Peak Surge Junction Temperature
(Forward Current Applied)
Voltage Rate of Change

THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Case
- Junction to Ambient

1.4
40

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

Rectifier Device Data

3-129

•

MBR4015LWT

ELECTRICAL CHARACTERISTICS
Rating

Symbol

Instantaneous Forward Voltage (1)
@ IF = 20 Amps, TC = 25°C
@ IF = 20 Amps, TC = 125°C
@ IF=40Amps, TC = 25°C
@ IF = 40 Amps, TC = 125°C

VF

Instantaneous Reverse Current (1)
@ Rated DC Voltage, TC = 25°C
@ Rated DC Voltage, TC = 75°C

IR

Max

Unit

Volts
0.42
0.33
0.50
0.42
mA
5.0
150

(1) Pulse Test: Pulse Width = 300 I's, Duty Cycle < 2.0%

3-130

Rectifier Device Data

MOTOROLA

SEMiCONDUCTOR . . . . . . . . . . . . . . . . . . . . . . . .. .
TECHNICAL DATA

SWITCHMODE
Schottky Power Rectifier

MBR4045WT
Motorola Preferred Device

The SWITCH MODE power rectifier employs the use of the Schottky Barrier principle with
a Platinum barrier metal. This state-of-the-art device has the following features:
• Dual Diode Construction - Terminals 1 and 3 may be connected for Parallel
Operation at Full Rating
• 45 Volt Blocking Voltage
• Low Forward Voltage Drop
• Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns)
• Guaranteed Reverse Avalanche
• 150°C Operating Junction Temperature

SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
45 VOLTS

Mechanical Characteristics
.. Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 30 units per plastic tube
• Marking: B4045

2,4

<1

3

CASE 340F-03
TO-247AC

MAXIMUM RATINGS, PER LEG
Rating

Symbol

Max

Unil

VRRM
VRWM
VR

45

Volt

IF(AV)

20
40

Amp

Peak Repetitive Forward Current, Per Diode
(Rated VR, Square Wave, 20 kHz) @ TC = 90°C

IFRM

40

Amp

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IF~M

400

Amp

Peak Repetitive Reverse Current (2.0 fls, 1.0 kHz)

IRRM

2.0

Amp

TJ

-65 to +150

°c

TsI!l.

-65 to +175

°C

T,!(jill

175

°C

dvldt

10,000

V/flS

ReJC

1.4

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR)
@TC=125°C

Operating Junction Temperature
Storage Temperature
Peak Surge Junction Temperature (Forward Current Applied)
Voltage Rate of Change

Total Device

THERMAL CHARACTERISTICS, PER LEG

I Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS, PER LEG
Instantaneous Forward Voltage (I)
(iF = 20 Amps, TC = 25°C)
(iF = 20 Amps, T C = 125°C)
(iF = 40 Amps, T C = 25°C)
(iF = 40 Amps, T C = 125°C)

vF

Instantaneous Reverse Current (I)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 100°C)

iR

Volts
0.70
0.60
0.80
0.75
mA
1.0
50

(1) Pulse Test: Pulse Width", 300 115, Duty Cycle S2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 2

Rectifier Device Data

3-131

MBR4045WT

100

I

....:::: ~

,.~

~
a:

/. ~

F TC=150"C

a:

::>

L
.!f.

1100

TC-150"C

I

1

w

I

I

1

I

I

I

l:!

~

a:

/

!E

A.

300

400

500

600

700

0.01 0

1

.1

0.1

TC = 25"C

TC;100"C/ TC=25"C

200

I

TC = 100"C

I

<.>

/

/

10,I

I--i"""

vf, INSTANTANEOUS FORWARD VOLTAGE ImV)

20
30
VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

Figure 2. Typical Reverse Current

800

[f

10000

10

40

50

30

~

i

5

20

~

15

o
a:

r--

25

12
~

I~"
SQUAREW~~

10

(VR=45V)~
I.
I

w

:if(

~

100

ir

1

10
VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance Per Leg

3-132

100

110

DC

"-

~"

120
130
140
TC, CASE TEMPERATURE I"C)

150

Figure 4. Current Derating Per Leg

Rectifier Device Data

160

MOTOROLA

SEMiCONDUCTOR . . . . . . . . . . . . . . . . . . . . . . . . . ..
TECHNICAL DATA

SWITCHMODE
Power Rectifier

MBR6045WT

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with
a Platinum barrier metal. This state-of-the-art device has the following features:
• Dual Diode Construction - Terminals 1 and 3 may be connected for Parallel
Operation at Full Rating
• 45 Volt Blocking Voltage
• Low Forward Voltage Drop
• Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns)
• Guaranteed Reverse Avalanche
• 150°C Operating Junction Temperature

SCHOTIKY BARRIER
RECTIFIER
60 AMPERES
45 VOLTS

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 30 units per plastic tube
• Marking: B6045

CASE 340F-03
TO-247AC

MAXIMUM RATINGS, PER LEG
Symbol

Max

Unit

VRRM
VRWM
VR

45

Volt

IF(AV)

30
60

Amp

Peak Repetitive Forward Current, Per Diode
(Rated VR, Square Wave, 20 kHz) @ TC; 90°C

IFRM

60

Amp

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

500

Amp

Peak Repetitive Reverse Current (2.0 }!S, 1.0 kHz)

IRRM

2.0

Amp

TJ

-65 to +150

°C

Tsta

-65 to +175

°C

TJlok)

175

°C

dv/dt

10,000

V/}!s

RaJC

1.0

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectilied Forward Current (Rated VR)
@TC;125°C

Operating Junction Temperature
Storage Temperature
Peak Surge Junction Temperature (Forward Current Applied)
Voltage Rate 01 Change

Total Device

THERMAL CHARACTERISTICS, PER LEG

I Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS, PER LEG
Instantaneous Forward Voltage (1)
(iF; 30 Amps, T C ; 25°C)
(iF; 30 Amps, TC; 125°C)
(iF; 60 Amps, T C ; 25°C)

vF

Instantaneous Reverse Current (1)
(Rated DC Voltage, TC; 25°C)
(Rated DC Voltage, TC; 100°C)

iR

(1) Pulse Test. Pulse WIdth = 300 J.lS. Duty Cycle

Volts
0.62
0.55
0.75
mA
1.0
50

~2,0%.

Rev 2

Rectifier Device Data

3-133

MBR6045WT

1000
~
§. 100

.....
zw

a:
a:
=>
<..>
w
rn
a:
w
>
w
a:

IE

Te=150'e
10
Te= 100'e

-

0.1
Te = 25'e

om 0

10

//V/

-

20
30
40
VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Reverse Current

3-134

.."

~ /'

/
150'e

so

.!f.

1100

I

I

i

flooiefC 25 'e

/200

300

400

SOD

600

700

vf', INSTANTANEOUS FORWARD VOLTAGE (mV)

Figure 2. Typical Forward Voltage

Rectifier Device Data

800

lN5826
lN5827
lN5828

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

•

1N5826 and 1N5828 are
Motorola Preferred Devices

Designer's Data Sheet

Power Rectifiers

SCHOTTKY
BARRIER
RECTIFIERS

· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide
passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage,
high-frequency inverters, free wheeling diodes, and polarity protection diodes.
• Extremely Low vF
• Low Stored Charge, Majority Carrier Conduction

15 AMPERE
20,30.40 VOL TS

• Low Power Loss/High Efficiency
• High Surge Capacity

Mechanical Characteristics:
• Case: Welded steel, hermetically sealed
• Weight: 45.6 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily Solderable
• Solder Heat: The excellent heat transfer property of the heavy duty copper anode terminal
which transmits heat away from the die requires that caution be used when attaching
wires. Motorola suggests a heat sink be clamped between the eyelet and the body during
any soldering operation.
• Stud Torque: 15 Ib-in max
• Shipped 25 units per rail
• Marking: 1 N5826, 1 N5827, 1 N5828
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage

DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average Rectified Forward Current

Symbol

lN5826

lN5827

lN5828

Unit

VRRM
VRWM
VR

20

30

40

Volts

VRSM

24

36

48

Volts

..

10

..

15

VR(equivl ';;0.2 VR(dcl, TC=85 0 C
Ambient Temperature

95

TA

90

85

DO-203AA

METAL

Amp
uc

Rated VR(dc), PF(AV) = 0,
R8JA = 5.00 C/W
Non-Repetitive Peak Surge Current
(surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
Operating and Storage Junction
Temperature Range (Reverse

IFSM

TJ,Tstg

voltage applied)
Peak Operating Junction Temperature
(Forward Current Appl ied)

TJ(pk)

_

500 (for 1 cycle) _

___ -65 to +125 ____

..

150_

Amp

°c

°c

*THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

*ELECTRICAL CHARACTERISTICS (Tc = 250 C unless otherwise noted.)
Characteristic
Maximum I nstantaneous Forward
Voltage (1)

Symbol

(iF = 8.0 Amp)
(iF = 15 Amp)
(iF =47.1 Amp)
Maximum I nstantaneous Reverse
Current @ rated de Voltage (1)

TC = 1000C

lN5826

lN5827

lN5828

Unit

Volts

vF
0.380
0.440
0.670

0.400
0.470
0.770

0.420
0.500
0.870

10
75

10
75

10
75

mA

iR

* Indicates JEOEC Registered Data.
(1) Pulse Test: Pulse Width = 300 IlS, Duty Cycle = 2.0%.

Rev 1

Rectifier Device Data

3-135

1 N5826 thru 1 N5828

NOTE 1: OETERMINING MAXIMUM RATINGS

Reverse power dissipation and the possibil itv of thermal runlM/'ay
must be considered when operating th is rectifier at reverse voltages
above 0.2 VRWM. Proper derating may be accomplished by use
of equation (11:
TA(maxl = TJ(maxl-ReJA PF(AVI- ReJA PR(AVI
(11
where
T A(maxl = Maximum allowable ambient temperature
TJ(maxl = Maximumallowableiunction temperature (125 0 C
or the temperature at which thermal runaway
occurs, whichever is lowesd.
PF(AVI = Average forward power dissipation
PR(AVI = Average reve ... power dissipation
R6JA = Junction to smbient thermal resistance
Figures 1, 2 and 3 permit easier use of equation (11 by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (21:
TR = TJ(maxl - ReJA PR(AVI
(21
Substituting equation (21 into equation (11 yields:
TA(maxl = TR - ReJA PF(AVI
(31
Inspection of equations (2) and (3) reveals that TA is the ambient
temperatu ra at wh ich thermal ru naway occurs or where TJ = 125°C,
4

4

when forward power is zero. The transition from one boundary
condition to the other is evident on the curves of Figures 1, 2 and

3 as a difference in the rate of changa of the slope in the vicinity
of 11SoC. The data of Figures 1, 2 and 3 is based upon dc condl·

tions. For use in common rectifier circUits, Table I indicates suggested factors for an equivalent dc voltage to usa for conservative
design; i.e.:
VR(equivl = Vin(PKI x F
(41
The Factor F is derived by conSidering the proparties of the various
rectifier circuits and the reverse characteristics of SchottkV diodes.
Example: Find TA(maxl for 1N5828 operated in a 12·Volt dc
supply using e bridge circuit with C'8Pacitive filter such that 'De·
10 A IIF(AVI = 5 AI, I(PKI/I(AVI = 20, Input Voltage = 10
V(rms). ReJA = 5 0 CIW.
Step 1:

Find VR(equivl. Reed F = 0.65 from Table I :.
VR(equivl = (1.411(101(0.651 = 9.18 V
Find TR from Figure 3. Reed TR = 121 0 C@VR = 9.18
& ReJA = 5 0 CIW
Find PF(AVI from Figure 4." Reed PF(AVI = 10 W
I(PKI
@'(AVI=20& IF(AVI = 5 A

Step 2:
Step 3:

Step 4:

.*

Find TA(maxl from equation (3). TA(maxl = 121-151(101
= 71 0 C

Value given are for the 1N5828. Power is slightlv lower for the
other units because of their lower forward voltage.

TABLE 1- VALUES FOR FACTOR F
Half Wave

Circuit
Load

Resistive

Sine Wave

0.5
0.75

Square Wave

I

1.3
1.5

I

Resistive

I Capacitive
I

0.5
0.75

"
~115
=>

!;(
~ 105

t- r::: ::-:::t:::::
r--... I""~

...........

I"-....

15....
w
z

w
~
w
~
w

~

.....r

-

.......

~

""

...... f'o,.

.......

r-....

85

2.5

....

..:::::: :--

............... t--.... .........

f".

95

-

ROJA (OCIWI • 50'

,,"'-

~ 105

~

"
"
"'- I\.."

}.,,"I\.. I\. '\

4.0
5.0
7.0
10
VR. REVERSE VOLTAGE (VOLTSI

3.0

=>

2 1 " , -"

i'.J

75
2.0

20

15

FIGURE 3 - MAXIMUM REFERENCE TEMPERATURE - 1N5828
125

u

~

115

~~

5if 105

15....

r--

I'-..

I"

95

I'.

~

.....r

-

r--.....:

.......

..........
........

""'

95

.r

~

r--..

f".
I'...
I'...

85

:--...~

4.0

5.0

"'"

""
I'

"

~

I'\.

"
"
'" """'-"
"
''\. " "-",'\.

"I\.. 1,\

" ' - 10'

"'"

1~

'\\
\.

"-20"1\..

I'

R6JA (OCIWI· 50'

t-

75
3.0

.... 3.5

!
-.... r-- r-... 1'--........... ~~ ~5.0
~"X7.0..........

...............

15....

~

2.5

~

30"'-

.......

~

7.0
10
15
VR. REVERSE VOLTAGE (VOLTSI

20

30

FIGURE 4 - FORWARD POWER DISSIPATION

5.0

w
~
w

~

1.3
1.5

r-- I'" I- ~~K·5
- r-.
r--... r---~i'-:""""""" I'-... . . . . ><0-.1 . . .
..... r-.,
~
1'-.."'- ~" .>. C\

w

"w

I

I

7.0

=>

z

-'.jt

2.5

.::::
~115
U

!;(

" "'-to ~"
"-30"- r--'1Z
~

I Capacitive

FIGURE 2 - MAXIMUM REFERENCE TEMPERATURE - 1N5827
125

3.5+~"",5.0

"V<.. "'-

......

1.0
1.5

*tUse line to center tap voltage for Vin.

~K'O

......

"-

Resistive

0.65
0.75

I

"Note that VR(PK) "'2 Vin(PKI
FIGURE 1 - MAXIMUM REFERENCE TEMPERATURE - 1N5826
125

Full Wave,
Center Tapped * t

Full Wava, Bridge

I Capacitive·

""'-""'3D

85

'"

"I\.. 1~ :\. \ 1\
."\15 1"1\.. '\ 1\

'\

R6JA (OCIWI· 50''''75
4.0

'\
5.0

7.0

'\

20\.

1"'-

.'- "'- \ \
1,\ I\,
'-'\. r\.1\.

I"

10
15
20
VR. REVERSE VOLTAGE (VOLTSI

30

2.0 1---,/F:r-:7'l""~"F'---t--

40
IF(AVI. AVERAGE FORWARD CURRENT (AMPI

·No external heat sink.

3-136

Rectifier Device Data

1 N5826 thru 1 N5828

FIGURE 6 - MAXIMUM SURGE CAPABILITY

FIGURE 5 - TYPICAL FORWARD VOL TAGE

vi-""

200

c". V

V I---'

TC = 25 0
·10 0
70

/

50

~ 20

500

..............

w

>

.'"~

300

r---.. I'-.
~

r-....

200

'"~

7.0

~

5.0

=>

20

5.0

I

20

50

100

FIGURE 7 - CURRENT DERATING

I

z

~ 3.0

16

!l;
5. 14

z

ia
.'"

2.0

.~

12

c

1.0

10

~ 8.0

0.7

~
w

0.5

to

6.0

ffi>

4.0

0.3

~ 2.0

0.2

10

NUM8ER OF CYCLES

iil

~~

:........
.....

100
1.0

~

i

........

~

!/

10

Prior to surge, the rectifier is operated such
thatTJ = looDe; VRRM may be applied be·
tween each cycle of surge .
t= 60 Hz

700

~
a

1000C

II

0::

G

"....5.

I
V

30

i

1000
0::

i-'"'"

..

o

I

u::
0.4
0.2
0.6
0.8
1.0
1.2
VF.INSTANTANEOUS FORWARD VOLTAGE (VOLTSI

0
75

1.4

95
105
Tc, CASE TEMPERATURE (OCI

85

125

115

FIGURE 8 - THERMAL RESPONSE
I. 0

~z

7

o.
o.5

~

~ _ O. 3
...J 1:1

~~

--

~

O. 2

.... ~

~ ~ o. I

:: ~ 0.07
ffi ~o.o5

tpI T
_ TIPk

in

:
I-

~

6 TJC
where

0.03
0.02
0.0 I
0.05

z6JC(tl =R6JC • rltl

I--tt---'

=Ppk '

TIME

OUTY CYCLE, 0 =tp/tl
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.

::=

:

-

ReJC 10 + (1- 01· r(tt + tpl + r(tpl-r(tlll

-

ATJC =the increase in junction temperature above the case temperature
_
rtt) '" normalized value of transient thermal resistance at time, t, from Figure 8, i.e.: _
r(11 + tpl = normalized value of transient thermal resistance at time, tl t tp.

0.1

0.2

0.5

1.0

2.0

5.0

10
t, TIME

Rectifier Device Data

20

50

100

200

500

1.0k

2.0k

5.0 k

(m~

3--137

1N5826 thru 1N5828

FIGURE 10 - TYPICAL REVERSE CURRENT

FIGURE 9 - NORMALIZED REVERSE CURRENT
S.O

~

N

2.0

~
;:;

1.0

o

~

./

3.0 -VR = VRWM

::l

«

200

::

0.7
O.S

a'"

0.3

ffi

0.2

./

.;'"

w

~

IE

0.1

....- f-""

>-

20

'"'-'=>

== 7S oC
S.O

~

w

V'

'"'"

-

....

lOooe

-

10

'"

2.0

'"

1.0

r--

2S oC

OS

0.07
0.OS2S

02
4S

6S
8S
TC. CASE TEMPERATURE (DC)

-

....

w

~

lOS

12S

o

-- -

- -- --

<'

SO

E

./

TJ' moc

100

4.0

8.0

......

.,...

I--

-

-

-- -

lN5826
lNS827
'---lN5828

-

12
16
20
24
28
VR. REVERSE VOLTAGE (VOLTS)

32

20 V:
30 V
40 V
36

40

FIGURE II-CAPACITANCE
NOTE 2 - HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and

reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed

by using a model consisting of an ideal diode in parallel with a

40

variable capacitance. (See Figure 11).
RectIfication effiCiency measurements show that operation will
be satisfactory up to several megahertz. For example, relative
'waveform rectification effiCiency IS approximately 70 per cent at
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is
0.28 at this frequency, whereas perfect rectification would yield
0.406 for sine wave Inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficiency is not indicative of
power loss; it IS simply a result of reverse current flow through the
diode capacitance, whiCh lowers the de output voltage.

VR. REVERSE VOLTAGE (VOLTS)

3-138

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

1N5829
1N5830
1N5831

Designer's Data Sheet

Switchmode Power Rectifiers
· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters,
free wheeling diodes, and polarity protection diodes.
• Extremely Low vF
• Low Stored Charge, Majority
Carrier Conduction

lN5831lsa
Motorola Preferred Device

• Low Power Loss/High
Efficiency
• High Surge Capacity

25 AMPERE

20,30,40

Mechanical Characteristics:

• Case: Welded steel, hermetically sealed
• Weight: 45.6 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily
Solderable
• Solder Heat: The excellent heat transfer property of the heavy duty copper anode terminal
which transmits heat away from the die requires that caution be used when attaching
wires. Motorola suggests a heat sink be clamped between the eyelet and the body during
any soldering operation.
• Stud Torque: 15 Ib-in max
• Shipped 25 units per rail
• Marking: 1N5829, 1N5830, 1N5831

VOLTS

CASE 56-03
DO-203AA
METAL

MAXIMUM RATINGS
Symbol

'1N5829

·1N5830.

'1N5831

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

20

30

40

Volts

Nonrepetitive Peak Reverse Voltage

VRSM

24

36

48

Average Rectified Forward Current
VR~Q!JiYl:;;0.2VR(!jc)o TC=85'C

10

Rating

Ambient Temperature Rated VR(dc)' PF(AV) = 0, RaJA = 3.5'CIW
Nonrepetitive Peak Surge Current
(surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Operating and Storage Junction Temperature Range
(Reverse voltage applied)
Peak Operating Junction Temperature (Forward Current Applied)

TA

25
90

85

Volts
Amps

80

'c

IFSM

800 (for 1 cycle)

Amps

TJ' Tstg

-65 to +125

'c

TJ(ok)

150

'c

THERMAL CHARACTERISTICS
Chaeracteristics

Max

Thermal Resistance, Junction to Case

1.75

ELECTRICAL CHARACTERISTICS (TC = 25'C unless otherwise noted)
Characteristic
Maximum Instantaneous Forward Voltage(l)

(iF = 10 Amps)
(iF =25 Amps)
(iF = 78.5 Amps)

Maximum Instantaneous Reverse Current @ Rated de Voltage(l)
(Te= 100'C)

Symbol

'IN5829

*IN5830

'IN5831

Unit

vF

0.360
0.440
0.720

0.370
0.460
0.770

0.380
0.480
0.820

Volts

20
150

20
150

20
150

mA

·Indlcates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 300 11S, Duty Cycle = 2%.
DeSigner's Data for "Worst Case" CondHlons - The DeSigner's Data Sheet permits the design of most circuits entirely fromthe information presented. Limit

curves - representing boundaries on device characteristics - are given to facilitate ''worst case" design.
Rev 2

Rectifier Device Data

3-139

1N5829,1N5830,1N5831

NOTE 1: DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at reverse voltages above 0.2 VRWM. Proper derating
may be accomplished by use of equation (1):
TA(max)=TJ(max)-R8JA PF(AV)-R/IJA PR(AV) (1)
where
Maximum allowable ambient
temperatu re
TJ(max)
Maximum allowable junction
temperature (125°C or the temperature
at which thermal runaway occurs,
whichever is lowest).
PF(AV)
Average forward power dissipation
PR(AV)
Average reverse power dissipation
R8JC
Junction-to-ambient thermal resistance
Figures 1, 2 and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway
into consideration. The figures solve for a reference temperature as determined by equation (2):
TA(max)

TR = TJ(max) - R/IJA PR(AV)
(2)
Substituting equation (2) into equation 91) yields:
TA(max) = TR - R8JA PF(AV)
(3)
Inspection of equations (2) and (3) reveals that TR is the
ambient temperature at which thermal runaway occurs
or where TJ = 125°C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves.of Figures 1, 2 and 3 as a difference
in the rate of change of the slope in the vicinity of 115°C.

The data of Figures 1,2 and 3 is based upon dc conditions.
For use in common rectifier circuits, Table 1 indicates
suggested factors for an equivalent dc voltage to use for
conservative design; i.e.:
VR(equiv) = Vin(PK) x F

(4)

The Facto.r F is derived by considering the properties of
the various rectifier circuits and the reverse characteristics of Schottky diodes.

Example: Find TA(max) for lN5831 operated in a 12-Volt
dc supply using a bridge circuit with capacitive filter such
that IDe = 16 A (IF(AV) = 8 A), '(PK)/'(AV) = 20, Input
Voltage = 10 V(rms), R8JA = 5°CIW.
Step 1: Find VR(equiv)' Read F = 0.65 from Table 1
VR(equiv) = (1.41)(10)(0.65) = 9.18 V
Step 2: Find TR from Figure 3. Read TR = 113°C @ VR
=; 9.18 & R8JA = 5°CIW .
Step 3: Find PF(AV) from Figure 4.** Read PF(AV) = 12.8

@.!ie.!9.

= 20 & IF(AV) = 8 A
'(AV)
Step 4: Find TA(max) from equation (3). TA(max) = 113(5) (12.8) = 49°C
W

**Value given are for the 1N5828. Power is slightly lower
for the other units because of their lower forward
voltage.

Table 1. Values for Factor F

Resistive

Capacitivet

Resistive

Capacitive

Resistive

Sine Wave

0.5

1.3

0.5

0.65

1

1.3

Square Wave

0.75

1.5

0.75

0.75

1.5

1.5

tNote that VR{PK) ~ 2 Vin{PK)

125

~
~

t-115

~

~ 105

~

~

a:

-

95

,

........

["-..
r-......

It
a:

r-:::: t--.

"

2

,.I

i'. :-.........~.75-

I'. ;X5,""

" " ," !,"
""
'" "
""
"
r-- r-.."- '"
~

ReJA (OCiW) = 5Ottt"

75

125

."""- '-..
r-.5~
" "'- ,~ ~7 ,,""i'-.

2

~

w
a.
:::E

115

- t-: r:::::- -...: -

r---.....

105 I'--

I!!
~
zw
a:

§

.........
95

tt
a:

r--........

........

~ "-..
..........
r-........

f:: . . . t-:::::::::-...
i'-- ~~
r-......

ReJA (OCiW) =
3

~'" 1.75

r'\..2.5' ~

i' r........."
'-.." 3.~

" "

."- '\

5" ~\.
" "
"'- , I'-.. '}7 "- r\.'\
'\
r\. }: I"
r-.
~"
,
"'"- "50ttt"

" "

,!E 85
75

...... t----., ..........

7

3iJ'
\: "\15 " 201"10

30

VR. REVERSE VOLTAGE (VOLTS)
Figure 2. Maximum Reference Temperature -

1 N5830

tttNO EXTERNAL HEAT SINK

3-140

\.

Rectifier Device Data

1N5829, 1N5830, 1N5831
125

28

::::::- ..........

~

11

~

105 ~

I
::;;
~

i'-.-

95

~

a:
a:

~

.........

""'"
""-

I'-- ,~

f-ROJA
75 I"CiVlI

~ ....... I'- 1.75

,,,,,,- ,,;S

r"-

I"-

i'-. I'-

1'-"

~.5"

" " i5 "
I""""
" ~15" I"
f'..

" '\"' "'

'\

[\,

"

I'-

l"-

I'- 20 ~

= 50ttt "

4

10"""

" "
'"
" " '"
""

10
15
20
7
VR, REVERSE VOLTAGE IVOLTSI

!tINO EXTERNAL HEAT SINK.

'\

30

1/ V ./.:
/[,;';

300
j/

k-"

V '" V

TC - 25"C

100

~
~

30
20

f?en
=>

@

.......

V

12

16

125"C

20

..........
.......

-

24

28

'"
..............

~ 300

..............
i"""-t---

<[

PRIOR TO SURGE, THE RECTIFIER IS OPERATED SUCH
~ 200 I " - THATTJ = 100"C; VRRM MAY BE APPLIED
BETWEEN EACH CYCLE OF SURGE
::E
f - 60Hz
~
::t:

11111

10

20

50

I

100

NUMBER OF CYCLES

Figure 6. Maximum Surge Capability

~

ii:

28

~

24

§

20

~

--.........

c

a:

~

16

i:2 12

1

w

~
:;;:

0.7
0.5

~

i!=
0.6

0.8

I

1.2

vF, INSTANTANEOUS FORWARD VOLTAGE IVOLTSI

Figure 5. Typical Forward Voltage

1.4

de, CONTINUOUS
IMAX IDC = 39.3 AI
r.:::::::...
~
SINE WAVE,
~
RESISTIVE LOAD
I
r-..
~
P<
SQUARE·
..........
"'~ '\
WAVE --......... ~
--......... ~ "\.
............
I"'-.. ~"\.

'"

u

Rectifier Device Data

~

.--......

....

/

0.4

TJ

I 1

w

;;;
.!?

0.2

./

"...

:;;:

if

o

",,- de i--

1000

~

S 700
z
~ 500

z

0.3

".,

Figure 4. Forward Power Dissipation

II I
/

~

/

".,

VV

8

=>

/

10

/

SQUARE
WAVE -

u

V

u

~

V

/,

~ 50

./ ./

IFIAVI, AVERAGE FORWARD CURRENT IAMPI

/'

ii:

L

I?-:: ~ V

o

40

100"C

70

=>
c

k

y

/ V

o

Figure 3. Maximum Reference Temperature -1N5831

200

/
IL
/

/

_

YlA"

/

10

/
/
/

[\, '\

30 "

SINE WAVE

5 RESIS~VE I5A~7

II

! """

"

r-- SISINE
WAVE
CAPACITIVE
r-LOADS
r-r-- _.IIPKI = 20
r-- -IIAVI
I

:::-::::::--- r-....

"

t'-.,.

85

F:::: r--

r--.

5 ........... ..........

w

ffi
tb

-....;;

r--

-

--....

r-

"

'>-- ./'

~

SINE WAVE
,\
./ P"""->< .........
I - - CAPACITIVE ~ = 20 10.... 5
r-----....-"""": K\.\
I - - LOADS IIAVI
~
~
o CURVES APPLY WHEN REVERSE POWER IS NEGLIGIBLE
85
95
105
115
125
75

"

TC, CASE TEMPERATURE I"CI

Figure 7. Current Derating

3-141

1N5829,1N5830,1N5831

1
0.70 I
0.50

 f;;>I.0 MHz)

Unit
Volts

vF

0.55

-Indicates JEOEC Registered Data.
(1) Not JEOEC requirement, but a Motorola product capability.
12) Pulse Test: Pulse Width = 300 JJS, Duty Cycle"" 2.0%

Rev 1

3-144

Rectifier Device Data

1N6095, 1N6096, 5041

FIGURE 1 -

FIGURE 2 -

TYPICAL FORWARD VOLTAGE

200

V

100

/

V

v

1000

30

E

ffi

::;;
~

I-

15
a:
a:
=>

'"ca:
c[

~
~

c[

I-

.i'

2SoC
0.01

S.O

I

10

40

30

20

FIGURE 3 -

'/

3.0

600

Z

'"~

o

50

7.0

in
~ 400
~

c[

I-

--

o. I

VR, REVERSE VOLTAGE (VOLTS)

'"53=>
z

....-

75°C

1.0

~
a:

I /

10

100°C

~

ffi

II /

I /
II II 2SoC

20

10

'"

/
TJ = ISOoC

in

c..

125°C

a:
a:
=>

/

r- -

-

TJ~1500~

_ 100
c[

70
SO

TYPICAL REVERSE CURRENT

2.0

.!:f.

I-

15
a:

\.

I

i'-. r-..."- I'....

> 200
c[

;r

IN6095/6'

~

.

o

0.2

0.4

0.6

0.8

1.0

1.2

~

100

::f;

80
2.0

3.0

5.0 7.0

FIGURE 4 -

HIGH FREQUENCY OPERATION

Rectifier Device Data

20

50

70 100

CAPACITANCE

3000

Since current flow in a Schoitky rectifier is the result of majority
stored charge, Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel
with a variable capacitance. (See Figure 4.)
Rectification efliciency measurements show that operation will
be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency is approximately 70 per cent at
2.0 MHz, e.g .. the ratio of dc power to RMS power in the load is
0.28 at this frequency, whereas perfect rectification wou'ld yield
0.406 for sine wave inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficieny is not indicative of
power loss; it is simply a result of reverse current flow through the
. diode capacitance, which lowers the dc output voltage:

10

NUMBER OF CYCLES AT 60 Hz

VF,.INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

carrier conduction. it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and

30

I'-r-... ........

60
1.0

1.4

I I. I

I...... r--

"

~
0.2

I'--

c[

0.3

,I

S041

~

0.5

,I,

TJ = 125°C, VRRM may be
applied b.tween .ach
cycl. 01 surge.

\. ['\

'"

0.7

I I I

\.

a:
=>

1.0

MAXIMUM SURGE CAPABILITY

2000

..............

.

~

....

,~

~

~

1000
900
~ 800
~ 700
~ 600
500

t:

"-'\

400
300
.05

"~
0.1

0.2

0.5
1.0
2.0
5.0
VR, REVERSE VOLTAGE (VOLTS)

10

20

3-145

50

•

1N6095, 1N6096, S041

FIGURE 5 - SD41 CURRENT DERATING

FIGURE 6 - 1 N6095/6 CURRENT DERATING

v.; 40r---,---,---,---,---,----r---r---r---r---,

Rated Reverse Voltage

"-

::E

5.

~ 3D~-+--~---+---4--~~~+
:::J

'-'
C
a:

............

~ 20r---t---t---1---1---~~~~~---t---t---l

--

~

•

:it

.

I
--..( ""'- ~.I 10. 20I = ~
(Capacitive Load)

:::::-- :::::--- " 1 , / AV
::::::: ~ ~ t-....

~

'"ffi

Ipk
..
= Tr (ResistIVe Load)
AV
and Square Wave

I
/

10

de

~ t;;S:S ~

-s

"""'iilIiiI

SF
80

100

120

160

140

120
100
TC. CASE TEMPERATURE (OCl

80

TC. CASE TEMPERATURE (OCl

-

~

z

I - - (Capacitive Load) Ilpk

AV

20

ffi

~

/ V/ V

//:V/ V

10

~

ffi

:it

/

5.0

Sine Wave and

V/

Square Wave

V

de

V

/. ~ ' /
/aV/

~

'"

II

1// /

15

"-

c
a:

I

= 20-10- 5

/ /

C;;

::
c

160

FIGURE 7 - FORWARD POWER DISSIPATION

25

c

~
c'"

~

140

TJ

=125°C- ~
J

~~

'"

o
o

10

20

30

40

IF(AV). AVERAGE FORWARD CURRENT (AMPS)

FIGURE 8 - THERMAL RESPONSE

1.0
0.7

0.5

...-

0.3
0.2
0.1

d=tJ1

Ip

~

aTJC=

0.05

0.03

0.01
0.01

3-146

Pk

TI~E

Pro RBJC [0 +(1 -01,

DUly Cycl•• D = Ip/ll
Peak Power, Ppk, is peak of an

equivalent square power pulse.
~Il +Ipl +'llpl- ~lll1

where .6. JC =the increase in junction temperature above the case temperature .
r(t) ;; normalized value of transient thermal resistance at time. t.

./

I-""
0.02 L.

~

_

f--q--(

for example. r itl. + tpl ;; normalized value of transient
thermal r~sist8nce at time.1 + tp.

0.1

10

1.0

100

I. TIME (m.)

Rectifier Device Data

1000

1N6095, 1N6096, S041

FIGURE 9 - SCHOTTKY RECTIFIER
Copper Lead

Barrier Metal
Steel

rJ~E;~~~~~-1---- Oxide Passivation
VIEW A-A

Copper Base

Moly Disk
Guardring

Motorola builds quality and reliability into its Schottky Rectifiers.
First is the chip, which has an interface metal between the
platinum-barrier metal and nickel-gold ohmic-contact metal to eliminate
any possible interaction with the barrier. The indicated guardring
prevents dv/dt problems, so snubbers are not required. The guardring
also operates like a zener to absorb over-voltage transients.
Second is the package. There are molybdenum disks which closely
match the thermal coefficient of expansion of silicon on each side of the
chip. The top copper lead is also stress relieved. These two features

VIEW A-A

give the unit the capability of passing stringent thermal fatigue tests for
5,000 cycles. The top copper lead provides a low resistance to current
and therefore does not contribute to device heating; a heat sink should
be used when attaching wires.
Third is the redundant electrical testing. The device is tested before
assembly in "sandwich" form, with the chip between the moly disks. It
is tested again aiter assembly. As part of the final electrical test, devices
are 100% tested for dv/dt at 1,600 V/IlS and reverse avalanche.

FIGURE 10 - TEST CIRCUIT FOR dv/dt AND
REVERSE SURGE CURRENT

VCC

fi2V

--I

100

2N2222

I--- 2.01's

1.0 kHz
Current
Amplitude
Adjust
0-10 Amps

Rectifier Device Data

,'2Vdc

lOon
Carbon

3-147

•

MBR3520
MBR3535
MBR3545

MOTOROLA

_ SEMICONDUCTOR
TECHNICAL DATA

•

MBR35451.a
Motorola Preferred Device

Switch mode Power Rectifiers
SCHOTTKY BARRIER
RECTIFIERS

· .. using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling
diodes, and polarity-protection diodes.

•

35 AMPERES
to 45 VOLTS

• 150°C Operating Junction
• Guardring for dv/dt Stress Protection
Temperature
• Guaranteed Reverse Surge
• Mounting Torque: 15 in-Ib max
Current/Avalanche
Mechanical Characteristics:
• Case: Welded steel, hermetically sealed
• Weight: 45.6 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily
Solderable
• Solder Heat: The excellenl heat transfer property of the heavy duty copper anode terminal
which transmits heat away from the die requires that caution be used when attaching
wires. Motorola suggesls a heat sink be clamped between the eyelet and the body during
any soldering operation.
• Stud Torque: 15 Ib-in max
• Shipped 25 units por rail
• Marking: 83520, 83535, 83545

20

CASE 56-03
DO-203AA
METAL

MAXIMUM RATINGS

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Peak Repetitive Forward Curront
(Rated VR, Square Wave, 20 kHz, TC

= 110°C)

Symbol

MBR3520

MBR3535

MBR3545

Unit

VRRM
VRWM
VR

20

35

45

Volts

IFRM

Average Rectified Forward CUrrent
(Rated VR, TC = 110°C)

IF(AV)

Peak Repetitive Reverse Surge Current
(2.0 ~s, 1.0 kHz) See Figure 8

IRRM

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)

IFSM

Operating Junction Temperature

TJ
Tstg

Storage Temperature

Voltage Rate of Change
(Rated VR)

dvldt

•

•
•
•

•
•

•

70

t

Amps

35

t

Amps

2.0

t

Amps

600

t

Amps

65 to + 150

t

°C

65to+175

t

,

10000

°C

VII'S

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction-to-Case

Typ

MaK

1.3

1.5

Typ

MaK

ELECTRICAL CHARACTERISTICS PER DIODE
Characteristic

Symbol

Instantaneous Forward Voltage (1)
(iF = 35 Amp, TC = 125°C)
(iF = 35 Amp, TC = 25°C)
(iF = 70 Amp, TC = 125°C)

vF

Instantaneous Reverse Current (1)
(Rated Voltage, TC = 125°C)
(Rated Voltage, TC = 25°C)

iR

Capacitance (VR = 1.0 Vdc, 100 kHz> f> 1.0 MHz, TC= 25°C)

CI

(1) Pulse Test: Pulse Width

Unit
Volts

0.49
0.55
0.60

0.55
0.63
0.69

60
0.1

100
0.3

3000

3700

mA

pF

=300 p,S, Duty Cycle =2.0%

Rev 2

3-148

Rectifier Device Data

MBR3520, MBR3535, MBR3545

FIGURE 2 - MAXIMUM REVERSE CURRENT

FIGURE 1 -MAXIMUM FORWARD VOLTAGE

1000

v

200

V

100

I---~ TJ-150oC
I----

/V

~ 20

I-

15
g§

10

Ii: 0.1
0.01

~

25°C

o

10

/



~

;::

20
30
VR. REVERSE VOLTAGE (VOLTS)

40

50

30

~
;;;;

20

FIGURE 3 - MAXIMUM SURGE CAPABILITY

/

600

II

z

,..

~

a:

7.0

~ 50

z

1.0

1:l

II /

I I
II II
/ / 25°C

::!.

75°C

~

TJ = 150°C

in

-

100°C

10

:::>
u

/

30

'"~

i

1/

50

iil

125°C

l-

70

:::>
u

100

«g

c;;o..
:;;

400

::!.
I-

15
a:
a:
:::>
'-'

10

~

1\

\

200

'"a::::>

07

 300

~

0:

'"

i--""

1000 e

0

S

V

--

FIGURE 6 - MAXIMUM SURGE CAPABILITY

1000

I

10
20
NUMBER OF CYCLES

50

100

~ 7.0

fa
z

~
~
:!:

FIGURE 7 - CURRENT DERATING

5.0
ii:

40

'"

S

3.0

l-

I

.!£.
2.0

I

32

:i1

24r---t---t---t-~~~t-~~~4--;~

~

IB~~t==-t---t---t-~~~4---~~~~~--~

1.0

i

0.1

g

0.5

>
<.

B.O

:;

0.3

o

If
O.B

0.4

0.2

O.B

1.0

1.2

1.4

SINE WAVE, IIIPKI
CAPACITIVE -=20 1O-5.0'-t--"T"'-oE'.....:"RI.-T-j
LOADS
IIAVI

CURVES APPLYW~EN REVERSE POWER IS NEGLIGIBLE

~~5--~--~B~5---L--~95.-~--~1~05.--L--~---L~~
TC, CASE TEMPERATURE IOC)

'F, INSTANTANEOUS FORWARD VOLTAGE IVOLTSI

FIGURE 8 - THERMAL RESPONSE

1.0
0.7
0.5

W

'"z

In
"'"

0.3

"'-'0

0.2

iii

--

---

I-

"",W

~~ 0.1

W"",

0.01
"'''' 0.05

1-",
1-0

'""'"

I-

~

where
b. TJC '" the increase in junction temperature above the case temperature

0.03

r(t) '" normalized value of transient thermal resistance at time, t, from Figure 8, i.e.:
r(q + t p) '" normalized value of transient thermal resistance at time, tl + tp.

0.02
0.01
0.1

3-154

DUTY CYCLE, 0 = tplll
PEAK POWER. Ppk. is peak of an
equivalent square power pulse.

6TJC=Ppk' ROJC 10+11-0)' rill +tp)+ rltpl-rlll)1

[5~

l?i

io}cit: ! ROJ~. rllt)
ft:jlPk
tp ~
TIME
tl--'

II III
0.2

0.5

1.0

2.0

5.0

10

20
50
t, TIME 1m,)

100

I

I IIIIII
200

500

I I

1.0k

2.0k

11

5.0k

10 k

Rectifier Device Data

1 N5832 thru 1 N5834

FIGURE 9 - NORMALIZED REVERSE CURRENT

FIGURE 10 - TYPICAL REVERSE CURRENT

5.0

500

./

ffi 3.o/-VR =VRWM

V

N

~

2.0

""~

1.0

~_

7
O.
O. 5

./

IE

O. I
0.07
0.05

...... .....

....

OF

"u

0-

~

w

~

'"w

f-'

ffi o. 2

~

E.

I'

0

~

5.0

IE

.0

-

IOODC

65

45

25

85

105

125

TC. CASE TEMPERATURE (DC)

- -

-

-- -

-

15DC "..-

-

4.0

---

--

75°C
~

.0
.5

-~

-

;{ 10 0

~

~ O. 3

..,...

20 0

/

:::>

TJ = 115DC

B.O

11

16

-

-

IN5831 10V IN5833 ,30 V
-----IN5834 40V
18
32
36
40
10
14

==
==

VR. REVERSE VOLTAGE IVOLTSI

FIGURE 11- CAPACITANCE
BOD 0

6000

4000

r...

I"

~3000

TJ

J:",

r....

NOTE 2: HIGH FREQUENCV OPERATION

I-

Since current flow in a Schottky rectifier is the result of majority

I'

carrier conduction, it is not subject to junction diode forward and

~ J'.
~

w
u

~ 2000
~ 150 0

«

pc

IN5~3

~~ 1000
800

600
400
0.040.06 0.1

=15DC

reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed
by using a model consisting of an ideal diode in parallel with a
variable capacitance. (See Figure Ill.

I~B32

Rectification efficiency measurements show that operation will

""

IN5B34

1 11 1
0.1

0.4 0.6 1.0

1.0

4.0 6.0 10

VR. REVERSE VOLTAGE (VOLTS)

20

40

be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency is approximately 70 per cent at
2.0 MHz, e.g., the ratio of dc power to RMS power in the load is
0.28 at this frequency. whereas perfect rectification would yield
0.406 for sine wave inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow through the
diode capacitance, which lowers the dc output voltage.

NOTE 3: SOLDER HEAT

The excellent heat transfer property of the heavy duty copper
anode terminal which transmits heat away from the die requires
that caution be used when attaching wires. Motorola suggests 8
heat sink be clamped between the eyelDt and the body during any
soldering operation.

Rectifier Device Data

3-155

•

I

1

lN6097
lN6098

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

SD5l

Switch mode Power Rectifiers
· .. using the platinum barrier metal in a large area metal-to-silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited lor use as rectifiers in low-voltage, high-Irequency inverters,
free-wheeling diodes, and poliuity-protection diodes.

•

1N6098 and S051 are

Motorola Preferred Devices

SCHOTTKY BARRIER
RECTIFIERS

• Low Power Loss/High Efficiency
• 150"C Operating Junction
Temperature Capability
• High Surge Capacity

• Guaranteed Reverse Avalanche
• Extremely Low vF
• Low Stored Charge, Majority
Carrier Conduction
• Guardring lor Stress Protection

•

60 AMPERES
20 to 45 VOLTS

Mechanical Characteristics:
• Case: Welded steel, hermetically sealed
• Weight: 17 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily
Solderable
• Solder Heat: The excellent heat transler property 01 the heavy duty copper anode terminal
which transmits heat away Irom the die requires that caution be used when attaching
wires. Motorola suggests a heat sink be clamped between the eyelet and the body during
any soldering operation.
• Stud Torque: 25 Ib-in max
• Shipped 25 units per rail
• Marking:.1N6097, 1N6098, 5051

1fi

CASE 257-01
DO-203AB
METAL

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage

OC Blocking Voltage
Peak Repetitive Forward Current

Symbol

1 N6097*

1N609S*

5051

Unit

VRRM
VRWM
VR

30

40

45
35

Volts

IFRM

-

-

45

(Rated VR. Square Wave. 20 kHz)
Average Rectified Forward Current

50

10

(Rated VR)

TC

Case Temperature

=70°C

Amps

-

Amps

-

°c

50
TC

115

TC

120
TC =90°C

=70°C
115

(Rated VR)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions

IFsM

•

'. SOO

IRRM

•

2.0

•

Amps

t

Amps

halfwave. single phase. 60 Hz)
Peak Repetitive Reverse Surge Currentl2)
(2.0 ps. 1.0 kHz) See Figure 10.

~-

Operatinn Junction Temperature Range

TJ

-65 to +125

-65 to +125

-65 to +150

Tstg

-65 to +125

-65 to +125

-65 to +165

°c

dvldt

10000

10000

10000

Vips

1N6097*

1N609S*

S051

°c

(Reve,,,,, Voltage Applied)

r----

Storage Tl!lllpcrature Range

Voltage Hnto of Change
(Rated VR)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance. Junction-to-Case

ELECTRICAL CHARACTERISTICS (TC = 25"C unless otherwise noted)
Symbol

Characteristic
Maximum Instantaneous Forward Voltage (2)

(iF = 157 Amp. TC =70°C)
(iF =60 Amp)
(iF =60 Amp. TC =125°C)
(iF = 120 Amp. TC =125°C)
Maximum Instantaneous Reverse Curront (2)

(Rated Voltage. TC =125"C)
(Rated Voltage. TC =25°C)

0.86

0.86

-

-

-

0.70
0.60
0.84

-

mA

-

200
50
(cll VR = 35 V

250

-

mA

iR
250

250

-

DC Reverse Current

Unit
Volts

vF

250

IR

(Rated Voltage. TC - 115°C)

f"

Ct

Maximum Capacitance
(100kHz ..
1.0 MHz)

7000
VR

=1.0Vdc

7000
VR

=1.0Vdc

4000

VR

=5.0 Vdc

pF

*Indlcates JEDEC Registered Data.
(1) Not a JEDEC requirement. but of Motorola product capability.
(2) Puis. Test: Puis. Width 300 ~s. Duty Cycl. 2.0%.

=

=

Rev 1

3-156

Rectifier Device Data

1N6097, 1N6098, S051

FIGURE 1 -

FIGURE 2 -

TYPICAL FORWARD VOLTAGE

200

/'V

/

1/
100

TJ = 150°C

V

100

«.§.

125°C

70

~

TJ = 150 0 C/
20

II
/

10

/

75°C

~

'"
ffi 1.0
1;:

/

30

10

a:
::>
'-'

/ /

-

100°C

>-

50

TYPICAL REVERSE CURRENT

1000

a:

I

!f:= 0.1

25°C

...- r-

25°C

0.01

o

10

40

20
30
VR, REVERSE VOLTAGE (VOLTS)

50

7. 0

5.0
3. 0
2.0

I

AGURE 3 -

I

TYPICAL SURGE CAPABILITY

1000

I

in 700 I'\.
~

"-

5-

500

>-

as
a:

1.0

a:
::>
'-'

O. 7

~ 300

0.5

'"""

::>

"-

""

,

.......

Rated Load
f = 60 HZ

...........

~ 200

r--.

r:-- --r-.

"-

::!;

~

O. 3
O. 20

0.2
0.4
O.B
0.8
1.0
1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

100
10

1.4

2.0

3.0

5.0 7.0 10
20
NUMBER OF CYCLES

FIGURE 4 -

NOTE 1
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and

stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel
with a variable capacitance. (See Figure 4.)
Rectification efficiency measurements show that operation will .
be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency ;s approximately 70 per cent at

2.0 MHz, e.g., the ratio of de power to RMS power in the load is
0.28 at this frequency, whereas perfect rectification would yield
0.406 for sine wave inputs. However, in contrast to ordinary
junction diodes. the loss in waveform efficiency is not indicative
of power loss; it is simply a result of reverse current flow through
the diode capacitance, which lowers the de output voltage.

~

3000

~

'-'

~ 2000

~

50

I II

I I

I

IIII
I II
100 kHz;;' f;;' 1.0 MHz

I

-r-

Max

"" ...... t'-TYr;--..

'-'

t--..
r--.....

--J\Jl",00v---{ 2N2222

-l 1-2JLS
1 kHz
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS

4 JLF

I

+

~

DUT

-=

loon
CARBON
1 CARBON

lN5817

Figure 4. Test Circuit for dv/dt
and Reverse Surge Current

3-161

50

MBR6015L, MBR6020L, MBR6025L, MBR6030L

100

~ 90
~
!Z 80

!
c

a::

~

~

~

~

0
5

70
60

\.
",-\1-'

50 r--- '-- Ip/lve = 5
40
·10
30
20

:i(

g

5
VR = RATED VOLTAGE

2\. 1\

\

"~\

.........

10
0
60

~

00

100

,\

1m

5

Ip

5

ol..".lll ~

160

iAV

,

= 20

v:

10

V V

......5
/

/" ......:: ~ ::;.,..
~ ~ ~ F-""

0

\

NO

t--7 ~

5

Or-- r---

i\ de

[\\

20

SQUARE WAVE-- r-....
SINE WAVE

0

X~QUAREAND
\SINE WAVE

5

v:::V

..... de

? ....... V

p-

10

TC. CASE TEMPERATURE lOCI

15

20 25 30 35 40 45 50 55
IFIAVI. AVERAGE FORWARD CURRENT

60

65

70

Figure 6. Power Dissipation

Figure 5. Forward Current Derating

NOTE 2
DUTY CYCLE. D = tpNl
PEAK POWER. Ppk. IS PEAK OF AN
EQUIVALENT SQUARE POWER PULSE.

To determine maximum junction temperature of the
diode in a given situation, the following procedure is
recommended:
The temperature of the case should be measured using
a thermocouple placed on the case. The thermal mass
connected to the case is normally large enough so that
it will not significantly respond to heat surges generated

i.
~
~

~t,-

--, -

-_ ..

....

0.2

_ 0.1
m

~ 0.05

i!=
!Z

1*
:z

0.02

g 0.01

:€I

-

0.01

in the diode as a result of pulsed operation once steadystate conditions are achieved. Using the measured value
of Te, the junction temperature may be determined by:
TJ = TC + .:lTJC
where .:lTC is the increase in junction temperature
above the case temperature. It may be determined by:
.:lTJC = PpkoROJc[D+(l-D)or(tl +t p )+r(t p)-r(tl)]
where
r(t) = normalized value of transient thermal resistance
at time, t, from Figure 7, i.e.:
r(tl -tp) = normalized value of transient thermal resistance at time tl +tp.

--

R8JClti = R8JC + rltl
INOTE 2)

I---"'""'
0.02

0.05

0.1

0.2

5

0.5

10

20

50

100

200

500

t. TIME (ms)

Figure 7. Thermal Response

3-'162

Rectifier Device Data

1000

MBR6015L, MBR6020L, MBR6025L, MBR6030L

COPPER LEAD

BARRIER METAL

\~!~~~~~~f---OXIDE PASSIVATION
VIEW A-A

MOLY DISK

VIEW A-A
Motorola builds quality and reliability into its Schottky
Rectifiers.
First is the chip, which has an interface metal between
the platinum-barrier metal and nickel-gold ohmic-contact
metal to eliminate any possible interaction with the barrier. The indicated guard ring prevents dv/dt problems, so
snubbers are not mandatory. The guardring also operates
like a zener to absorb overvoltage transients.
Second is the package. There are molybdenum disks
which closely match the thermal coefficient of expansion
of silicon on each side of the chip. The top copper lead

has a stress relief feature which protects the die during
assembly. These two features give the unit the capability
of passing stringent thermal fatique tests for 5,000 cycles.
The top copper lead provides a low resistance to current
and therefore does not contribute to device heating; a
heat sink should be used when attaching wires.
Third is the redundant electrical testing. The device is
tested before assembly in "sandwich" form, with the chip
between the moly disks. It is tested again after assembly.
As part of the final electrical test, devices are 100% tested
for dv/dt at 1,600 V/p.s and reverse avalanche.

Figure 8. Schottky Rectifier

Rectifier Device Data

3-163

•

MOTOROLA

-

Switchmode Power Rectifiers

MBR6045 loa
Motorola Preferred Device

· .. using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling
diodes, and polarity-protection diodes.
•
•
•
•

-

MBR6035
MBR6045

SEMICONDUCTOR

TECHNICAL DATA

SCHOTTKY RECTIFIERS

Guaranteed Reverse Avalanche
Guardring for dv/dt Stress Protection
150'C Operating Junction Temperature
Low Forward Voltage

60 AMPERES
36 AND 46 VOLTS

Mechanical Characteristics:
• Case: Welded steel, hermetically sealed
• Weight: 17 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily
Solderable
• Solder Heal: The excellent heat transfer property of the heavy duty copper anode terminal
which transmits heat away from the die requires that caution be used when attaching
wires. Motorola suggests a heat sink be clamped between the eyelet and the body during
any soldering operation.
• Stud Torque: 25 Ib-in max
• Shipped 25 units per rail
• Marking: 86035, 86045

CASE 257-01
DO-203AB
METAL

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Peak Repetitive Forward Current
(Rated VR. Square Wave. 20 kHz) TC = 100°C

Average Rectified Forward Current
(Rated VR) TC = 100°C

Symbot

MBR6035

MBR6045

Unit

VRRM
VRWM
VR

35

45

Volts

IFRM
10

Peak Repetitive Reverse Surge Current
(2.0 "s. 1.0 kHz) See Figure 7

IRRM

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave. single phase. 60 Hz)

IFSM

Operating Junction Temperature
Storage Temperature

TJ
Tstg

Voltage Rate of Change
(RatedVR)

dvldt

•

•
,
•

120

•
•
•

60
2.0

•
,
,

800

•

65to+ 150

•
•

65 to +175

~

10000

Amps
Amps
Amps
Amps

°c
°C
VI"s

THERMAL CHARACTERtSTICS

Characteristic
Thermal Resistance. Junction·to·Case

Typ

Max

0.85

1.0

Typ

Max

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Instantaneous Forward Voltage (1)
(iF 60 Amp, TC 25°C)
(iF 60 Amp, TC 125°C)
(iF 120 Amp, TC 125 0 q

vF

Instantaneous Reverse Current (1)
(Rated Voltage. TC 25°C)
(Rated Voltage, TC 12soq

iR

Capacitance

Ct

=
=
=

=
=
=

=
=

(VR

=1.0 Vdc, 100 kHz';;; 1.0 MHz)

Unit
Volts

0.65
0.57
0.70

0.70
0.60
0.76

0.1

55

0.3
100

3000

3700

mA

pF

(11 Pulse Test: Pulse Width =300 ~•• Duty Cycle = 2.0%
Rev 2

3-164

Rectifier Device Data

MBR6035, MBR6045

FIGURE 1 -

TYPICAL FORWARD VOLTAGE

200
./

FIGURE 2 - TYPICAL REVERSE CURRENT

1000

V-

f--

V

I/

~

100

c----- TJ -

100

125°C

....§.

70
50

V

0
TJ = 150 0 Cj

II
I I

::.:.:.:

100°C

i

10

'"

10

75°C

'"u

/ /

=

150°C

0:

~

--

~

/

E: 01

25°C

Ih5°C
0.01

o

10

20

40

30

50

VR. REVERSE VOLTAGE (VOLTS)

0
0

I

FIGURE 3 - MAXIMUM SURGE CAPABILITY

I

1000

II

i.O

~

II

...::.

i

700
500

"-

f'....

~

'"

10

Rated Load
1= 60 HZ

'l"-

u

O. 7

~ 300
~

O. 5

""~

..............

200

r--

:E

~

0.3

100
10

0.2

o

r--_

0.2

0.4

0.6

0.8

1.0

1.2

1.4

20

3.0

50 7.0

10

20

30

50

70 100

NUMBER OF CYCLES

VF. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

FIGURE 4 - CAPACITANCE

NOTE 1
Since current flow in a Schottky rectifier is the ra5ull01 majority
carner conduction. it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and

stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel
with a variable capacitance. (See Figure 4.)
Rectification efficiency measurements show that operation will
be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency is approximately 70 per cent at

2.0 MHz. e.g .• the ratio of de power to RMS power in the load is
0.28 at this frequency. whereas perfect rectification would yield
0.406 for sine wave inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficiency is not indicative
of power loss; it is simply a result of reverse current flow through
the diode capacitance. which lowers the dc output voltage.

~

3000

w

'-'

~ 2000

13

IIII

I

5000

HIGH FREQUENCY OPERATION

I'.......

I I

I

Max

"~,, r-... .......
Typ

.......

<1:
;3
u

r--.

i'-. r.....

1000

........

700
.05

I

)JII
I I
T
100 kHz;;' f;;' 1.0 MHz - -

1.0

2.0

3.0

5.0 7.0

10

20

......

30

VR. REVERSE VOLTAGE (VOLTS)

Rectifier Device Data

3-165

r;;
50

..

MBR6035, MBR6045

FIGURE 5 - FORWARD CURRENT DERATING

FIGURE 6 - POWER DISSIPATION

80r---,----,----r---,----,----r---,----.
VR @ Rated Voltage

50

70r---~---r--_+--~----+---4_--~--~

(Capacitive load)
40

60r---+---~~~.-~----+---4_--~--~

"'-I~e

Ipk =
50~==+==:j::=~i:'-..~~tl~/7tAiIAV

1f

l~IX

Square Wave
(ResistIVe load)-

// / //
// / /
10.
'/L
//
/'
5

=20I--- ~
IAV
I

30

40I---+---t-.,.0~""""~.c.·..-+,,--+---+----l

30~==t~~,~~Ft§.~~'<--~-+-~
I ~~
~ = 20. 10. 5-+--"'!Ii,~'-1---I

10

I

10f-- (Capaeiliveload)

/Y / / ' ~ :Pk =
AV
// ~

20

2°r---+----r--_+--·~·f-1~~~~--~--~

~ /"

TC. CASE TEMPERATURE (0C)

1f

Square Wave
50% Duty Cycle
de

(Resistive load)--

TJ = 125°C

~~

"

~~0--~9~0--~10~0--~11~0~~12~0--~1~370--~1~4~0--~1~5~0--~160

/

/ /

40

20

80

60

IF(AV). AVERAGE FORWARD CURRENT (AMPS)

FIGURE 7 - TEST. CIRCUIT FOR dv/dt
AND REVERSE SURGE CURRENT

NOTE 2

J=tII
1----.,_
Pk

Ppk

'p

I

TIME

DUTY CYCLE, 0 '" tp/t)
PEAK POWER, Ppk, IS peak of an

Vcc

equlYillent square power purse

To determine maximum Junction temperature of the diode In a given
situation, the following procedure IS recommended:
The temperature of the case should be measured uSing a thermocouple
placed on the case. The thermal mass connected to the case is normally large
enough so that it will not significantly respond to heat surges generated m
the diode as a result of pulsed operation once steady-state condItIons are
achieved. Using the measured value of TC. the JunctIon temperature may be
determined by:

I I ~2V

~

--l

TJ",TC+.}.TJC

12Vdc

100

~

2N2222

I+-

2.01's
1.0kHz

where .}. T C ;s the increase In Junction temperature above the case
temperature. It may be determmed by:

Current

.}. TJC -- Ppk"ROJCIO+ (1- DJ.rlt, + tpl + rHpJ-rlt,1! where

100 n

Amplitude
Adjust
0-10 Amps

rlt) = normalized v.,lue of tranSIent thermal reSIstance at tmle, t. from
Figure 8, I.e.:
r1t1" tpl == norma\rl~d value of tranSient thermal resistance at time t1 + tp

Carbon

FIGURE 8 - THERMAL RESPONSE

g

I. 0

'"

O. 5

::;

:::;
0:

C>

~
~

u

O. 2

'"
~

'"
flj

r--

."

..,
R8JC(t) = R8JC + ~t)
(Note 2)

O. 1

0:

'"~ 0.05
....
....
:%:

*'"'"

...........

0.02 _

'"f: 0.0 \
0.0\
-

0.02

3-166

0.05

0.\

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

t. TIME (ms)

Rectifier Device Data

1000

MBR6035, MBR6045

FIGURE 9 - SCHOTTKY RECTIFIER
Copper Lead

Barrier Metal

~~~~~~~~!§~r--VIEW A-A

Copper Base

Oxide Passivation

Moly Disk
Guardring

VIEW A-A

Motorola builds quality and reliability into its Schottky Rectifiers.
First is the chip, which has an interface metal between the
platinum-barrier metal and nickel-gold ohmic-contact metal to

feature which protects the die during assembly. These two
features give the unit the capability of paSSing stringent thermal
fatigue tests for 5,000 cycles. The top copper lead provides a low

eliminate any possible interaction with the barrier. The indicated

resistance to current and therefore does not contribute to device
heating; a heat sink should be used when attaching wires.

guardring prevents dvldt problems, so snubbers are not mandatory. The guardring also operates like a zener to absorb overvoltage transients.

Second is the package. There are molybdenum disks which
closely match the thermal coefficient of expansion of silicon on
each side of the chip. The top copper lead has a stress relief

Rectifier Device Data

Third is the redundant electrical testing. The device is tested
before assembly in "sandwich" form, with the chip between the
moly disks. It is tested again after assembly. As part of the final
electrical test, devices are 100% tested for dv/dt at 1,600 VII'S
and reverse avalanche.

3-167

II

I

MOTOROLA

-

MBR6535
MBR6545

SEMICONDUCTOR

TECHNICAL DATA

•

MBR6545lsa
Motorola Preferred Device

Switchmode Power Rectifiers
· .. using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling
diodes, and polarity-protection diodes.

•

•
•
•
•

HIGH TEMPERATURE
SCHOTTKY RECTIFIERS

Guaranteed Reverse Avalanche
Guardring for dv/dt Stress Protection
175°C Operating Junction Temperature
Low Forward Voltage

65 AMPERES

35 and 45 VOLTS

Mechanical Characteristics:
• Case: Welded steel, hermetically sealed
• Weight: 17 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily
Solderable
• Solder Heat: The excellent heat transfer property of the heavy duty copper anode terminal
which transmits heat away from the die requires that caution be used when attaching
wires. Motorola suggests a heat sink be clamped between the eyelet and the body during
any soldering operation.
• Stud Torque: 25 Ib-in max
• Shipped 25 units per rail
• Marking: 86535, 86545

CASE 257-01
DO-203AB
METAL

MAxtMUM RATINGS
Rating

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage

DC Blocking Voltage
Peak Repetitive Forward Current

Symbol

MBR6535

MBR6545

Unit

Volts

VRRM
VRWM
VR

35

45

IFRM

130

130

Amps

10

65

65

Amps

IRRM

2.0

2.0

Amps

IFSM

800

800

Amps

Tj, Tstg

-65 to +175

-65 to +175

°C

dv/dt

1000

10000

V/~s

0.78
0.62
0.73

0.78
0.62
0.73

0.07
125

0.07
125

3700

3700

(Rated VR, Square Wave, 20 kHzl TC = 120°C
Average Rectified Forward Current

(Rated VR) TC = 120°C
Peak Repetitive Reverse Surge Current

(2.0

~s,

1.0 kHz) See Fig ure 7

Nonrepetltive Peak Surge Current
(Surge applied at rated load conditions halfwave.

single phase, 60 Hz)
Operating Junction Temperature and
Storage Temperature

Voltage Rate of Cha nge
(Rated VR)
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)

Maximum Instantaneous Reverse Current (1)

mA

iR

(Rated Voltage, TC = 25°q
(Rated Voltage, TC = 150°C)
Capacitance

Volts

vF

(iF = 65 Amp, TC = 25°q
(iF= 65 Amp, TC= 1500 q
(if = 130 Amp, TC = 150°C)

Ct

pF

(VR = 1.0 Vdc, 100kHz';; f.;; 1.0 MHz)
(1) Pulse Test: Pulse Width = 300 "'s, Duty Cycle ~ 2.0%

Rev 1

3-168

Rectifier Device Data

MBR6535, MBR6545

FIGURE 2 - TYPICAL REVERSE CURRENT

FIGURE 1 - TYPICAL FORWARD VOLTAGE
200

v If
TJ

100

~ 1500~ / I;'oo~v
25°C

70

I

I

50

II
J

30

;;;
~
:5- 20
:>
u

.
c

10

~

7.0

'"

5.0

/

I--

/

II

/

~

1.0

~

0.4
0.2

u

J

/ VI

~

V

100
40
20
10
4'
.§. 4.0
!z 2.0

w

ffi

=

TJ= 150°C

100°C

-

25°C

-

L..---

I--

0.1
~ 0.04

/

ci:

-

I /

/ II

0.02
0.01
0.004
0.002
0.001

r-

o

10

20
30
VR. REVERSE VOLTAGE (VOLTS)

'"

40

50

~
:>

...

I I

ffi
z

...z
...
'"~

.!:f.

I

3.0

I

2.0

II

1.0

FIGURE 3 - MAXIMUM SURGE CAPABILITY

I

/ /

1000

II

;;;

'"
::.

700

::;

500

:;;
>--

I

'"I"- """r--.

'"'"
a
~ 300
~

0.7
0.5

""~

I

Rated Load
f= 60 Hz

-

r--..... ........

200

r-.~

l

0.3
0.2

,

o

I
0.2
0.4
0.6
O.B
vF. INSTANTANEOUS VOLTAGE (VOLTS)

100

1.0

10

20

30

50 7.0

10

20

50

30

70 100

NUMBER OF CYCLES

FIGURE 4 - CAPACITANCE

NOTE 1
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority
carrier conduction. it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an Ideal diode in parallel
with a variable capacitance. (See Figure 4.)

Rectification effiCiency measurements show that operation will
be satisfactory up to several megahertz. For example, relative
waveform rectification efficiency is approximately 70 per cent at
2.0 MHz. e.g .. the ratio of de power to RMS power in the load is
0.28 at this frequency. whereas perfect rectification would yield
0.406 for sme wave inputs. However, in contrast to ordinary
junction diodes, the loss in waveform efficiency is not indicative
of power loss; it is simply a result of reverse current flow through
the diode capacitance. which lo~ers the de output voltage.

I

5000

~ 3000
w

U

~ 2000

.
u

~

1111
rill

I

T1

I.

-

Max

""~"
Typ

0-

r-...
~

<3

"
~ t--..

u

1000

'"
700
.05

I

100 kHz";; I";; 1.0 MHz

1.0

2.0

3.0

5.0 7.0

10

20

""'"

.......

30

VR. REVERSE VOLTAGE (VOLTS)

Rectifier Device Data

3-169

r-50

..

MBR6535, MBR6545

FIGURE 5 - FORWARD CURRENT DERATING

FIGURE 6 - POWER DISSIPATION

80
in

Rated Voltage Applied

~ 70
5f-

i

~
~
z 40

......... ~c

60

"-

=> 50
c
a:

u

""~

in 50
f-

..........

5.0

40

Square Wave. Sine Wave

i'..
~

~

~

I I I I
120

~

in

30

~

20

'"a:25
3:

""~ !'-..
~ I"-

IpK = 20 (Capacitive Load)
IAI

0..

"-

10

~ 30

'"~

(Resistive Load)

IAV

'"ffi""

~

130
140
150
160
TC. CASE TEMPERATURE (OC)

'"

10

>

"":>

f'.,.

170

""u:-

0..

r-- (Capacitive Loads)

lL £C
/

L ~
~ = 5.0 1// / '

IAV ~ VL

/ij' V

~/dL
/LA ~

..&~
~
10

180

/

SQ.,!Jare Wave

w

"'I',.

~ ="

20
30
40
50
60
IF(AV). AVERAGE FORWARO CURRENT (AMPS)

70

80

FIGURE 7 - TEST CIRCUIT FOR dv/dt
AND REVERSE SURGE CURRENT

NOTE2

HSI
I,
PPk

rWVjMO

Ppk

~Il---l

2.0

DUTY CYCLE, 0" Ip/q
PEAK POWER, Ppk, IS peak of an

VCC

equivalent square power pulse

TIME

n2V

To determme maltlmum ,unction temperature of the diode

In a gIVen
srtuatlon, the follOWing procedure IS recommended
The temperature of the case should be measured usmg a thermocouple
placed on the case The thermal mass connected to the case IS normally large
enough so that it will not slgnlflcantlv respond 10 heat surges generated In
the diode as a result of pulsed operation once steady-state condltrons are
achieved Usmg the measured value of T C. the Junction temperature may be

determIned by.

---l

TJ"'TC+..lTJC

f.-

where j, T C IS the Increase In Junction temperature above the case
temperature It may be determined by

12 Vdc

100

2N2222

2.0 !Is
1.0 kHz
Current
Amplitude
Adjust
0-10 Amps

j, TJC "" Ppk-ROJCID + 11 - DI-rlt1 + tpl + rHpl - rltl11 where
rlU = normalized value of transient thermal resistance at time, t, from
F,gure 8, I.e :
r(tl + tpl '" normahzed value of transient thermal resistance at lime t1 ... tp

kn

!'"' 1""

loon
Carbon
1.0 Carbon
lN5817

FIGURE 8 - THERMAL RESPONSE

~
::;
:;;
""
a:

0
.5

c

~
w

U

Z

t;
~

.;'

.2

I---"

f-""

R6JC(t) = R6JC + «t)
(Note 2)

O. 1

~

~ 0.0 5
~

!;;;

.........

~ 0.02 _

~

e:

-

0.0 1
0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

t. TIME (ms)

3-170

Rectifier Device Data

1000

MBR6535, MBR6545

FIGURE 9 - SCHOTTKY RECTIFIER
Copper Lead

VIEW A-A

Copper Base

Guardnng
Motorola bUilds quality and reliability Into its Schottky Rectifiers.
First is the ChiP, which has an Interface metal between the
platinum-barrier metal and nickel-gold ohmic-contact metal to
eliminate any possible interaction with the barrier. The indicated
guardring prevents dv/dt problems, so snubbers are not mandatory. The guardring also operates like a zener to absorb overvoltage transients.
Second IS the package. There are molybdenum disks which
closely match the thermal coefficient of expansion of silicon on
each side of the chip. The top copper lead has a stress relief

Rectifier Device Data

VIEW A-A

feature which protects the die during assembly. These two
features give the unit the capability of paSSing stringent thermal
fatigue tests for 5,000 cycles. The top copper lead provides a low
resistance to current and therefore does no~ contribute to device
heating; a heat smk should be used when attaching wires.
Third is the redundant electrical testing. The device IS tested
before assembly m "sandwich" form, with the chip between the
moly disks. It IS tested again after assembly. As part of the final
electrical lest, devices are 100% tested for dv/dt at 1,600 V I ~s
and reverse avalanche.

3-171

•

MBR7535
MBR7545

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MBA7545Is a
Motorola Preferred Device

Switch mode Power Rectifiers

SCHOTTKY BARRIER
RECTIFIERS

· .. employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
State-of·the·art geometry features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters,
free-wheeling diodes, and polarity-protection diodes.

75 AMPERES

35 AND 45 VOLTS

• Low Power Loss!
High Efficiency

• Extremely Low vF
• Low Stored Charge, Majority
Carrier Conduction

•

•

• High Surge Capacity
Mechanical Characteristics:
• Case: Welded steel, hermetically sealed
• Weight: 17 grams (approximately)
• Finish: All Extemal Surfaces Corrosion Resistant and Terminal Lead is Readily
Solderable
• Solder Heat: The excellent heat transfer property of the heavy duty copper anode terminal
which transmits heat away from the die requires that caution be used when attaching
wires. Motorola suggests a heat sink be clamped between the eyelet and the body during
any soldering operation.
• Stud Torque: 25 Ib-in max
• Shipped 25 units per rail
• Marking: B7535, B7545

CASE 257-01
DO-203AB
METAL

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Peak Repetitive Forward Current
(Rated VR' Square Wave, 20 kHz)

Symbol

MBR7535

MBR7545

Unit

VRRM
VRWM
VR

35

45

Volts

IFRM

150
TC = 90°C

Amp

10

75
TC=90°C

Amp

IFSM

1000

Amp

TJ' Tstg

-65 to +150

°c

TJ(pk)

175

°c

dv/dt

10000

V/jJS

Average Rectified Forward Current
(RatedVR)
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, Single phase, 60 Hz)
Operating and Storage Junction Temperature Range
Peak Operating Junction Temperature
(Forward Current Applied)
Voltage Rate of Change
(RatedVR)
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Rating

Symbol

Maximum Instantaneous Forward Voltage (1)
(iF = 60 Amp, TC = 125°C)
(iF = 220 Amp, TC = 125°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, T C = 125°C)

iR

Capacitance
(VR = 5.0 Vdc, 100 kHz S f s 1.0 MHz)

Ct

MBR7535

I

MBR7545

Unit
Volts

0.60
0.90
150

I

4000

250

mA

pF

(1) Pulse Test: Pulse WIdth = 300 jJS, Duty Cycle = 2.0%.
Aav2

3-172

Rectifier Device Data

MBR7535, MBR7545

FIGURE 1 - TYPICAL FORWARD VOLTAGE
500

I

300
TJ

ii!

150 ll e

25°C

V/ V

100

•

"....:0.
z

w

or
or

50

I

G
~

II

30

'"

1I

~

~

V II

~

=>

iil
z
....
z

'"
~'"

J

10

50

-

30

10

o

02

04

10

08

06

12

14

'F,INSTANTANEOUS FORWARD VOLT AGE (VOL TSI

FIGURE 2 - CURRENT DERATING

FIGURE 3 - TYPICAL REVERSE OPERATION

-

1000

'\

'"

""- \.

VR: RATED

~
....
~

""- VR:O

\.

':20kHz
S~UARErAVE ~PERArON

80

100

'"

w

120

TC. CASE TEMPERATURE (·CI

Rectifier Device Data

~ 1.0
1::;

'\.
\.

TJ: 150·C
-

10

G

'\ '\

r-

100

125·C

1----100·C

I--- 75·C

or

~ o. 1F== 25·C

\.

\ \
140

160

~

...-

r--_L

I---

OJ( 1

o

10

20

3D

40

50

VR. REVERSE VOLTAGE (VOLTSI

3-173

MBR8035
MBR8045

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

•

MBR8045 Is.
Motorola Preferred Oevlce

Switchmode Power Rectifiers
· .. using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and metal overlap contact.
Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling
diodes, and polarity-protection diodes.

•

•
•
•
•

SCHOTTKY RECTIFIERS
80 AMPERES
35 and 45 VOLTS

Guaranteed Reverse Avalanche
Guardring for dv/dt Stress Protection
175°C Operating Junction Temperature
Low Forward Voltage

Mechanical Characteristics:
• Case: Welded steel, hermetically sealed
• Weight: 17 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is Readily
Solderable
• Solder Heat: The excellent heat transfer property of the heavy duty copper anode terminal
which transmits heat away from the die requires that caution be used when attaching
wires. Motorola suggests a heat sink be clamped between the eyelet and the body during
any soldering operation.
• Stud Torque: 25 Ib-in max
• Shipped 25 units per rail
• Marking: 88035, 88045

CASE 257-01
DO-203A8
METAL

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage

DC Blocking Voltage
Peak Repetitive Forward Current

Symbol

MBRB035

MBRB045

Unit

Volts

VRRM
VRWM
VR

35

45

IFRM

160

160

Amps

10

80

80

Amps

IRRM

2.0

2.0

Amps

IFSM

1000

1000

Amps

TJ, Tstg

-65 to +175

-65 to +175

°c

dv/dt

1000

10000

V/~s

0.80

0.80

0.72
0.59
0.67

0.72
0.59
0.67

1.0
150

1.0
150

5000

5000

(Rated VR, Square Wave. 20 kHzl TC = 120°C
Average Rectified Forward Current
(Rated VRI TC = 120°C
Peak Repetitive Reverse Surge Current

(2.0

~s,

1.0 kHzl See Figure 7

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave.

single phase, 60 Hzl
Operating Junction Temperature and
Storage Temperature

Voltage Rate 01 Change (Rated VRI
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)

(iF = BO Amp, TC = 25°CI
(iF = BO Amp, TC = 1500 CI
(iF = 160 Amp, TC = 1500 CI
Maximum Instantaneous Reverse Current (1)

mA

iR

(Rated Voltage, TC = 25°CI
(Rated Voltage, TC = 1500 CI
Capacitance

Volts

. vF

Ct

pF

(VR = 1.0 Vdc, 100 kHz';; I';; 1.0 MHzl
(1) Pulse Test: Pulse Width:; 300 ,us. Duty Cycle:::;;; 2.0%
Rev 1

3-174

Rectifier Device Data

MBR8035, MBR8045

FIGURE 2 - TYPICAL REVERSE CURRENT

FIGURE 1 - TYPICAL FORWARD VOLTAGE

200

100

/ / 1/

/ /

/

100

== TJ-150oC

10
-

z

~ 0.0 2
Z

<[

:= 0.0 1

-

-

0.01

V f-

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

t. TIME (msl

3-176

Rectifier Device Data

1000

MBR8035, MBR8045

FIGURE 9 - SCHOTTKY RECTIFIER
Copper Lead

VIEW A-A

Copper Base

MolV Disk
Guardrmg

Motorola builds quality and reliabilitv into its Schottky Rectifiers.
First is the chip, which has an interface metal between the
platinum-barrier metal and nickel-gold ohmic-contact metal to
eliminate any possible interaction with the barrier. The indicated

guardring prevents dvldt problems. so snubbers are not mandatory. The guardring also operates like a zener to absorb overvoltage tranSients.

Second is the package. There are molvbdenum disks which
closely match the thermal coefficient of expansion of silicon on
each side of the chip. The top copper lead has a stress relief

Rectifier Device Data
!

VIEW A-A

feature which protects the die during assemblv. These two
features give the unit the capabilitv of passing stringent thermal
fatigue tests for 5.000 cvcles. The top copper lead provides a low
resistance to current and therefore does not contribute to device
heating; a heat sink should be used when attaching wires.
Third is the redundant electrical testing. The device is tested
before assemblv in "sandwich" form. with the chip between the
molv disks. It is tested again after assemblv. As part of the final
electrical test. devices are 100% tested for dvldt at 1.600 VII's
and reverse avalanche.

3-177

..
I

MOTOROLA

-

•

MBR3045CT
SD241

SEMICONDUCTOR

TECHNICAL DATA

MBR3045CT and 5D241 are
Motorola Preferred Devices

SCHOTTKY BARRIER
RECTIFIERS

Switchmode Power Rectifiers
· .. using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art
devices have the following features:

•

•
•
•
•
•

30 AMPERES
20 to 45 VOLTS

Dual Diode Construction
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Guaranteed Reverse Avalanche

Mechanical Characteristics:
• Case: Copper slug header, welded steel can, hermetically sealed
• Weight: 18.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 100 units per foam tray
• Marking: MBR3045CT, SD241

CASE 11-03
TO-2D4AA
METAL

MAXIMUM RATINGS
Rating

Symbol

MBR3045CT

50241

Unit

VRRM
VRWM
VR

45

45

Volts

10

30
15

30
15

Amps

Peak Repetitive Forward Current, Per Diode
(Rated VR, Square Wave, 20 kHz)

IFRM

30

30

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
hallwave, single phase, 60 Hz)

IFSM

400

400

Amps

Peak Repetitive Reverse Current, Per Diode
(2.0 ~s, 1.0 kHz) See Figure 8

IRRM

2.0

2.0

Amps

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(RatedVR) TC = 105°C

Per Device
Per Diode

Operating Junction Temperature
Storage Temperature
Peak Surge Junction Temperature
(Forward Current Applied)
Voltage Rate of Change (Rated V R)

TJ

-65 to +150

-65 to +150

°C

Tstg

-65 to +175

-65to+175

°C

TJ{pk)

175

175

°C

dv/dt

10000

10000

V/~

1.4

1.4

THERMAL CHARACTERISTICS PER DIODE
Maximum Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage (I)
(iF = 10 Amp, TC = 125°C)
(iF=20Amp, TC= 125°C)
(iF =30Amp, TC = 125°C)
(iF = 30 Amp, T C = 25°C)

vF

Maximum Instantaneous Reverse Current (I)
(Rated dc Voltage, T C = 125°C)
(Rated dc Voltage, T C = 25°C)

iR

Capacitance

Ct

0.60
0.72
0.76

Volts
0.47
0.60

mA

60
1.0

100
VR =35V

2000

2000

pF

(I) Pulse Test: Pulse Width = 300 ~s, Duty Cycle S 2.0%
Rev 2

3--178

Rectifier Device Data

MBR3045CT,50241

AGURE 1 -

FIGURE 2 - TYPICAL REVERSE CURRENT

TYPICAL FORWARD VOLTAGE

100
10

/ /

TJ= 1500C;,
20

~

TJ

;;;g

/ /

30

Vi

100

L

50

I;:

10

ffi

g§

125°C

10

I-

i'E

~

10

'"~
~

01

-

~

25°C

I

5.0

-

I--

0.01
10

20
30
VR. REVERSE VOLTAGE IVOLTS)

I\.

'-'

---

-

15°C

w

VI

-

100°C

~

El

::. 7.0

:::>

=150°C

40

50

~

~ 3.0

/

~

gj 2.0

II

Eil

z

~

:=
~

FIGURE 3 -

25°C

MAXIMUM SURGE CAPABILITY

500

~
::;;

1.0

"

~300

~

I-

i'E

.!? 0.1

ex:

~ 200

0.5

~

0.3

r--...

'I'-..

cycle of surge

.........

~ 100

.......

'"
::5

0.2

TJ = 125°C. VRRM may
be applied between each

0..

:l; 10

~
0.1

o

0.2
0.4
0.6
0.8
1.0
1.2
vF. INSTANTANEOUS FORWARD VOLTAGE IVOLTS)

50
1.0

1.4

FIGURE 4 - CURRENT DERATING

2.0

3.0

5.0 1.0 10
20
30
NUMBER OF CYCLES AT 60 Hz

50

10 100

FIGURE 5 - FORWARD POWER DISSIPATION

Vi

5 40

I

~ = rr IR.sistive Load)
AV/

I

-

=
0

I

"I\..."\ X\
..........
c'< \

..........

~




U
C
0::

V "/

f2
~

fa
z

~
z
~
en
;;:;
.!f

/ /V

10

V

/"

~

./

. / ,./

~
0::

_ 1000
«

V

10

TJ =100°C

0::

./ 7

/

1/

3-186

=>
u
w

TJ =125°C

~
w
>
W

1/1/ /
300

100

0::
0::

C::,125°C
:-- 1~0°c

!z
w

400

!!-

Aoo°c /TJ = 25°C

1/

V

500

600

700

TJ _25°C

0.1
0.01

o

vF, INSTANTANEOUS FORWARD VOLTAGE (mV)

40
60
80
VR, REVERSE VOLTAGE (V)

Figure 1. Typical Forward Voltage

Figure 2. Typical Reverse Current

800

900

20

100

120

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Advance Information
SWITCHMODETM Schottky

MBR25060V

Power Rectifier
· .. using the Schottky Barrier principle with a Platinum barrier metal. This
state-of-the-art device has the following features:
• 60 V Blocking Voltage, Low Forward Voltage Drop
• Double Rectifier Diodes Construction: May Be Paralleled for Higher
Current Output up to 100 Amp
• Guardring Construction Guarantees Stress Protection, High dV/dt
Capability (10 kV/llS) and Reverse Avalanche
• Very Low Internal Parasitic Inductance (~5.0 nH)
• Isol?ted Power Package (2500 Vac Insulation Rating)
• 150°C Operating Junction Temperature
• ~ - UL Recognized, File #E69369

SCHOTTKY BARRIER
RECTIFIER
100 AMPERES
60 VOLTS

Mechanical Characteristics
• Case: Molded epoxy with isolated metal base
• Weight: 28 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant
• Shipped 10 units per plastic tube
• Marking: MBR25060V

•

SOT-227B
STYLE 2

MAXIMUM RATINGS
Symbol

Max

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

60

Volts

Average Rectified Forward Current - Per Diode
(Rated VR) @ TC = 125°C
-Per Device

IF(AV)

50
100

Amps

Peak Repetitive Forward Current, Per Diode
(Rated VR, Square Wave, 20 kHz) @ TC = SO°C

IFRM

150

Amps

Non Repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

800

Amps

Peak Repetitive Reverse Current (2.0 I's, 1.0 kHz)

IRRM

2.0

Amps

TJ

-65 to 150

°C

Tstg

-65 to 150

°C

Peak Surge Junction Temperature (Forward Current Applied)

TJ(pk)

175

°C

Voltage Rate of Change

dVldt

10000

VII's

Package Insulation Rating (AC)

Visol

2500

Volts

Rating

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

1.2

Per Diode
Per Device

0.7

ELECTRICAL CHARACTERISTICS PER DIODE

=50 Amps, T C =25°C
=50 Amps, TC =10QoC
Instantaneous Reverse Current (1) @ Rated DC Voltage, TC =25°C
@ Rated DC Voltage, T C =100°C

Instantaneous Forward Voltage (1) @ iF
@ iF

vF

0.65
0.60

Volts

iR

0.5
20

rnA

(1) Pulse Test: Pulse Width = 300 I's, Duty Cycle < 2.0%
This document contains information on a new product. Specifications and information herein are subject to change without notice.

Rev 1

Rectifier Device Data

3-187

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Advance Information
SWITCHMODETM Schottky
Power Rectifier

MBR28045V

SCHOTTKY BARRIER
RECTIFIER
160 AMPERES
45 VOLTS

· .. using the Schottky Barrier principle with a platinum barrier metal. This
state-of-the-art device has the following features:

•

•

45 V Blocking Voltage, Low Forward Voltage Drop

•

Double Rectifier Diodes Construction: May Be Paralleled for Higher
Current Output up to t 60 Amp

•

Guardring Construction Guarantees Stress Protection, High dV/dt
Capability (10 kVlj.ls) and Reverse Avalanche

•

Very Low Internal Parasitic Inductance ("; 5.0 nH)

•

Isolated Power Package (2500 Vac Insulation Rating)

•

175°C Operating Junction Temperature

• ~-

UL Recognized, File #E69369

Mechanical Characteristics
•

Case: Molded epoxy with isolated metal base

•

Weight: 28 g (approximately)

•

Finish: All External Surfaces Corrosion Resistant

•

Shipped 10 units per plastic tube

•

Marking: MBR28045V

SOT-227B, STYLE 2

MAXIMUM RATINGS
Symbol

Max

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC 810cking Voltage

VRRM
VRWM
VR

45

Volts

Average Rectified Forward Current - Per Diode
-Per Device
(RatedVR)@TC=125'C

IF(AV)

80
160

Amps

Peak Repetitive Forward Current, Per Diode
(Rated VR, Square Wave, 20 kHz) @ TC = 90°C

IFRM

145

Amps

Non Repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

900

Amps

Peak Repetitive Reverse Current (2.0 ~, 1.0 kHz)

IRRM

2.0

Amps

TJ

-65 to 150

'C

Tstg

-65 to 150

'c

TJ(pk)

175

°c

Voltage Rate of Change

dV/dt

10000

V/~

Package Insulation Rating (AC)

Visol

2500

Volls

Rating

Operating Junction Temperature
Storage Temperature
Peak Surge Junction Temperature
(Forward Current Applied)

Rev 1

3-188

Rectifier Device Data

MBR28045V

THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case

Per Diode
Per Device

Symbol

Max

Unit

RSJC

1.1
0.6

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE
Instantaneous Forward Voltage (1)
@ iF = 80 Amps, TC = 25°C
@ iF = 80 Amps, TC = 150°C
@ iF = 160 Amps, TC = 25°C

vF

Insta~taneous

iR

Volts
0.8
0.69
1.0

Reverse Current (1)
= 25°C
= 100°C

mA

@ Rated DC Voltage, TC
@ Rated DCVoltage, TC

1.0
80

(1) Pulse Test: Pulse Widlh = 300!lS, Duty Cycle < 2.0%

1000
TJ = 150°C

<" 100

.§.
I-

TJ _125°C

Z

W

II:
II:

10

::::>

125°C

V

II:

w

"/

>

!t
1

100°C

7

200
400
300
500
600
VF,INSTANTANEOUS FORWARD VOLTAGE (mV)

Figure 1. Typical Forward Voltage

Rectifier Device Data

0.1

TJ = 25°C

TJ = 25°C

I

/1/

-

W
II:

15rC

J,

TJ = 100°C

u
w
en

.......: ~

700

0.01

o

10

20
30
VR, REVERSE VOLTAGE (V)

40

50

Figure 2. Typical Reverse Current

3-189

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Switchmode™ Power Rectifier

MBRB3030CT

Using the Schottky Barrier principle with a proprietary barrier metal. These
state-of-the-art devices have the following features:
•

Guardring for Stress Protection

•

Maximum Die Size

•

150°C Operating Junction Temperature

Motorola Preferred Device

SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
30 VOLTS

• Short Heat Sink Tab Manufactured - Not Sheared
Mechanical Characteristics:
• Case: Epoxy, Molded

•

•

Weight: 1.7 grams (approximately)

•

Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable

•

Lead and Mounting Surface Temperature for Soldering Purposes: 260°C
Max. for 10 Seconds

•

Shipped 50 Units per Plastic Tube

•

Available in 24 mm Tape and Reel, 800 Units per 13" Reel by Adding a
''T4'' Suffix to the Part Number

•

Marking: B3030

CASE 418B-02
D2pAK

MAXIMUM RATINGS
Symbol

Value

VRRM
VRWM
VR

30

IF(AV)

30
15

A

Peak Repetitive Forward Current, Per Leg
(At Rated VR, Square Wave, 20 kHz) TC; +137"C

IFRM

30

A

Nonrepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Hallwave, Single Phase, 60 Hz)

IFSM

200

A

Peak Repetitive Reverse Surge Current (2.0 J.ls, 1.0 kHz)

IRRM

2.0

A

Tstg

-55to +150

°C

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR) TC; +134°C)

Per Device
Per Leg

Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR)
Reverse Energy (Unclamped Inductive Surge)
(Inductance; 3 mH), TC; 25°C

Unll
V

TJ

-55 to+150

°C

dv/dt

10000

V/J.lS

W

100

mJ

THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Case

1.0

Thermal Resistance - Junction to Ambient (1)

50

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (2), per Leg
(IF; 15 A, TC; + 25°C)
(IF; 15 A, TC ;+150°C)
(IF; 30 A, TC; + 25°C)
(IF; 30 A, TC; +150°C)

VF

Maximum Instantaneous Reverse Current (2). per Leg
(Rated DC Voltage, TC; + 25°C)
(Reverse Voltage; 10 V, T C ; + 150°C)
(Rate DC Voltage, TC; +150°C)

IR

. .

V
0.54
0.47
0.67
0.66
mA
0.6
46
145

1. When mounted uSing minimum recommended pad size on FR-4 board .
2. Pulse Test: Pulse Width; 300 J.ls, Duty Cycle" 2.0%
Preferred deVIces are Motorola recommended chOices for future use and best overall value.

3-190

Rectifier Device Data

MBRB3030CT

Electrical Characteristics
§;: 100

§;: 100

I-

IZ

II:
II:

II:
II:

:z
w

W

:::>
U

:::>

u

Cl
II:

0

Cl
II:

TJ -150'C

~
II:

10

TJ -150'C

~

II:

~

0
u..

25'C

U)

:::>

ow

:::>

0

w

1

:z

25'C

U)

z
j:'!:
z

j:'!:

z

j:'!:

j:'!:

U)

u:.

U)

°nV

::;:;

::;:;

u:.

11

o. 1

o

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0

!z

0.4

0.5

0.6

0.7

Figure 2. Typical Forward Voltage, Per Leg

0.8

1.0

TJ = 150'C

o. 1~

:::>

§;:

O. 1

~

0.0 1

II:
II:

TJ = 150'C

:::>
U

100'C

~

0.3

Figure 1. Maximum Forward Voltage, Per Leg

II:

u

0.2

VF, INSTANTANEOUS VOLTAGE (V)

0.0 1

~

0.1

Vf; INSTANTANEOUS VOLTAGE (VOLTS)

1.0

§;:

100'C

1111

0.1

100'C

~ 0.00 1

0.00 1

II:

II:

W

W

~ 10-4

~ 10-4

25'C

a:

25'C

10-5

10-5

10-0

o

10

15

20

10-0

o

30

25

10

15

20

25

30

VR, REVERSE VOLTAGE (V)

VR, REVERSE VOLTAGE (V)

Figure 3. Maximum Reverse Current, Per Leg

Figure 4. Typical Reverse Current, Per Leg

TJ =25'C

-

5000

u:.s

w
u 3000
z
j:'!:
<3

~

"'"

u

<5
1000

r--....

~~

MAXIMUM

TYPICAL .......

f::',
~
::-....

800
600
10
VR, REVERSE VOLTAGE (V)

Figure 5. Capacitance

Rectifier Device Data

3--191

•

I

MBRB3030CT

Typical Characteristics

g

30

g

RWC= 1°CNI

Z

DC

W

0:
0:

20

It (RESISTIVE

~
0:

12
w

-

~ 10

0:

w

-

LOAD)

/'

......

o

......

r-- r-

20

0
0:

~
0

SQUA REWAVE
10

It (RESISTIVE

,..

u..

w

~

~"~ ~\
r....

--

I

~C

::::>

.... D<
....... ~ 1\
,...."

15

u

:PK = 5.0 (CAPACITIVE_
AV
LOAD)

10

~

0:
0:

><1,\

:1C
~

zw

/ SQUARE WAVE

::::>

U
0
0:

RaJA = 25°CNI

I-

I-

0:

LOAD)

~
AV

= 5.0 (CAPACITIVE
LOAD)

10

W

:1C

'i
LL

~

20

TC, CASE TEMPERATURE (0G)

100
50
TA, AMBIENT TEMPERATURE (0G)

Figure 6. Current Derating, Infinite Heatsink

Figure 7. Current Derating

120

1~

125

1~

1~

1~

150

155

150

[

z

10

Q
!;(

RaJA = 50°CNI

~ r.... DC

~~

'" It

I(RE~ISTI~E L6ADI)

Il.

J

0:

- -- -

~o
~
12

./i '
::::: t:-~ = 5.0 (CAPACITIVE
r- r-::: ~ :::::
t>< AV LOAD)
.....: ~ ~ t-.. ~
~ r!2. .....
r.;:::: F:::: ~ ......
,...."

r- l- I-

20

0

AV

LOAD)

i

I

10

~

150

'i
iF

1\

11/

jjI~

0
0

~
..... ~

~

"V /~f(

/1 I/V {/ . . . 1-'

20

w
:1C

.... ...

\

10

TJ = 150°C

\

I- ~ = 5.0 (CAPACITIVE

w

..... f$l ~ ~

50
100
TA, AMBIENTTEMPERATURE (0G)

Iltl(R~S!S~IV~ L~A~)

15

is

J

SQUARE WAVE

'""'-

V

J

gj

DC

1-" .....
['SQUARE WAVE

~~ ~~ .....

~ii!:;;

5
10
15
20
IF(AV), AVERAGE FORWARD CURRENT (A)

Figure 8. Current Derating, Free Air

25

Figure 9. Forward Power Dissipation

1.0

.......
.....

-

SINGLE PULSE

tp

b.11~

...
0.01

R..::JLPk
TIME

DUTYCYCLE.D=lpI!1
PEAK POWER, Ppk,is peak of an
equivalentsquare power pulse

ATJL = pk· RruLID .. (1 - DJ. r(tl + Ipl + r(lpl- r(l,l]
where
ATJL = the Increase in Junction temperature above the lead temperature
r(1) = normalized value of \ransienllhermal resistance allime, ~ for example,
r{l, + tpl = normalized value of transient thermal resistance at time, 11 + Ip.

0.1

1.0

IIIII
10
I,TIME (ms)

I

I I IIIIII
100

I

I I I II
1000

Figure 10. Thermal Response

3-192

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MBRB4030

Switch mode Power Rectifier

Motorola Preferred Device

Using the Schottky Barrier principle with a proprietary barrier metal. These
state-of-the-art devices have the following features:
• Guardring for Stress Protection
•
•
•

SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
30 VOLTS

Maximum Die Size
150°C Operating Junction Temperature
Short Heat Sink Tab Manufactured - Not Sheared

Mechanical Characteristics
•
•
•

Case: Epoxy, Molded
Weight: 1.7 Grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads
Readily Solderable

•
•

Shipped 50 Units per Plastic Tube
Available in 24 mm Tape and Reel, 800 Units per 13" Reel by Adding a
"T4" Suffix to the Part Number

•

Marking: B4030

II
CASE 418EHl2
D2pAK

MAXIMUM RATINGS
Symbol

Value

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

30

Average Rectified Forward Current
(At Rated VR) TC = +115°C (1)

IF(AV)

40

A

Peak Repetitive Forward Current
(At Rated YR. Square Wave, 20 kHz) TC = + 112°C

IFRM

80

A

Nonrepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Hallwave, Single Phase, 60 Hz)

IFSM

300

A

Peak Repetitive Reverse Surge Current (2.0 I's, 1.0 kHz)

IRRM

2.0

A

Tstg

-65to+150

°c

Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR)
Reverse Energy (Unclamped Inductive Surge) (Inductance = 3 mH), Tc = 25°C

Unit
V

TJ

-65to +150

°C

dv/dt

10,000

VII'S

W

600

mJ

THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Case

1.0

Thermal Resistance - Junction to Ambient (2)

50

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1 and 3), per Device
(IF = 20 A, TC = + 25°C)
(IF =20 A, TC = +150°C)
(IF = 40 A, TC = + 25°C)
(IF = 40 A, TC = +150°C)

VF

Maximum Instantaneous Reverse Current (3), per Device
(Rated DC Voltage, T C = + 25°C)
(Rated DC Voltage, TC = +125°C)

IR

V
0.46
0.34
0.55
0.45
mA
0.35
150

NOTES:
1. Rating applies when pins 1 and 3 are connected.
2. Rating applies when surface mounted on the miniumum pad size recommended.
3. Pulse Test: Pulse Width = 300 118, Duty Cycle'; 2.0%
Preferred devices are Motorola recommended choices for future use and best overall value.

Rectifier Device Data

3-193

MBRB4030

Electrical Characteristics

TJ =150°C
TJ _150°C
100~llllmlll~iillllll~
_'f 100~llllllllmi;lllmll~

<_E
ffi

ffi

~

~

~M

~M

02

UZ

~~ 10~11111111111111111~ ~~~6 1°~111111!1111111111~
~6
~~

1000C

000
:::>:I:

~~

250C

100°C 250C

000
:::>::c

~~
5l~1.O1••••11111115l~

~~z
~
.!f.

~

~

0.1 o~L.J...I':WU-J~::'-'-..lI..L:'-:'-J...J..':-'-:!.J.J'-'7'::'-'...LJ.:,:,-..u.-,-:,:,w-.1..I.:'.!f.
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 0~J...J..LJ.,L-.LLJ..I-:':'u...W::':"-.w.-'-:'-,.w-'-':-':-,w-.1..J.,..,..,.w-'-:-'
0.1 0.2 0.3 0.4 0.5 0.6 O.i
VF. INSTANTANEOUS VOLTAGE (V)
VF. INSTANTANEOUS VOLTAGE (V)
Figure 1. Maximum Forward Voltage

Figure 2. Typical Forward Voltage

1.0
5:
!z
w
~

:::>

1.0

TJ =150°C

0.1

~

l000C

1

~ 0.0

:::>

u
w

w

ffi

TJ _150°C

5: o.1

100°C

am

u

rn

1

z - 1.01• • • • • • •

~

rn

ffi

1(1-3

>
w

Gj
~

1(1-3

~

.!!= 10-4
10-5

a

25°C
10
15
20
VR. REVERSE VOLTAGE (V)

25°C

.!!=10-4

25

30

1(1-5

10
15
20
VR. REVERSE VOLTAGE (V)

a

Figure 3. Maximum Reverse Current

25

30

Figure 4. Typical Reverse Current

TJ 25°C
=

"'"

................

~~

I~

TYPICAL"'" :::: MAXIMUM
~

~

1000

~ r==o..l=

10

VR. REVERSE VOLTAGE (V)
Figure 5. Maximum and Typical Capacitance

3-194

Rectifier Device Data

MBRB4030

Electrical Characteristics
70

L J

I

I
I
I
11 (RESISTIVE LOAD)

DC

~

/"
,/

........
;:::<;

~

-

.......... ~

10

110

I

I
I
I

I

I

:PK = 5.0 (CAPACITIVE
AV
LOAD)

"

20

~

RaJA - 25°CIWt-

DC

.....

-

t-

:-- ~

.....

;:"':

"

~

..... ...,.

'\.

F;;::;; r- 10

~ .\.

r-r-

-..:: :::-... :"-\

120
130
140
TC, CASE TEMPERATURE (OC)

........ .....

r- <

Ii:-

.......

20

~
150

~

10

20

......

~ r.....

LOAD)

I'

;> to.....

r;:::: ~ I'-..

(RESISTIVE LOAD)

1\
\

:PK = 5.0 (CAPACITIVE
AV
LOAD)
\
:PK = 5.0 (CAPACITIVE
AV
LOAD)

10
~O V \ V1/ h V
/ II / ~ 1/

i'-..

) /~

r- r~
r- I- r-- :- :""i ~

..... ......

,r'

- r- r-

r--:: ~ ...... ......

--

150

TJ = 150°C
11

",-

~

Figure 7. Current Derating

SQUARE WAVE

- ---

-

50
100
TA, AMBIENTTEMPERATURE (OC)

~

.....;;: ~

:PK = 5.0 (CAPACITIVE
..... AV
LOAD)

./

RaJA = 50°CNI

11 (RESISTIVE

......

",-

-- ......:

r- -

o
o

I
I

DC

:-....; I:t-..

~~

Figure 6. Current Derating, Infinite Heatsink

12

SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE

....,. SQUARE WAVe -

r:1I(RESISTIVE LOAD).....

,/

- ........ --20

100

_!.

.......... /

SQUARE WAVE

L
I
I

50
100
TA, AMBIENT TEMPERATURE (OC)

~

10

Figure 8. Current Derating, Free Air

,.,

/

~QJAR~ WA~E
"

I""

DC

"

J. ~ ~ V
..... 1iIIi!

/

....-

20
30
40
50
60
IF(AV), AVERAGE FORWARD CURRENT (A)

70

80

Figure 9. Forward Power Dissipation

tp

RTI
PPk

c -1

Ppk
TIME

OUIYCYClE,O-\i'1
PEAK POWER, Ppk. is peak of an
equivalent square power pulse.

t1

~;;~; pk' ReJLlo,II-O) "111 ''')''II~-'IIIII
.6.TJL = the Increase in junction temperature above the lead tempera1ure
r(ll = normalized value of transienllhermal resistance at lime, I, lor example,
r(t1 + Ipl = normalized value of transient thermal resistance al time, tl +Ip'

0.Q1 L..-L.....I.-.L..W..J.U..,_...l...-..J....J.....L..J...L.llJ_....L...-l.....1...J...JIwI,..w
",.cI_..l.'..1.......1.
I I ....I..L..
l.w"....,
II,~--',.-J.,_'-"ul....
,":':'
III,
0.1
1.0
10
100
1000
t, TIME (ms)

Figure 10. Thermal Response

Rectifier Device Data

3-195

II

•

3-196

Rectifier Device Data

Section 4
Ultrafast Data Sheets

•

Rectifier Device Data

4-1

I

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

Surface Mount
Ultrafast Power Rectifiers

MURS120T3
MURS160T3

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection
diodes in surface mount applications where compact size and weight are critical to the system.
•
•
•
•

Motorola Preferred Devices

Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, T J = 150°C)

ULTRAFAST RECTIFIERS
1.0 AMPERE
200-600 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Marking: U1D, U1J

•

CASE 403A-03

MAXIMUM RATINGS
MURS
Rating

Symbol

120T3

160T3

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

200

600

Volts

Average Rectified Forward Current

IF(AV)

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave,
single phase, 60 Hz)

IFSM

Operating Junction Temperature

1.0 @TL
2.0 @lL

=
=

155°C
145aC

1.0 @TL
2.0 @ TL

=
=

35

40

-65 to +175

TJ

150aC
125aC

Amps
Amps

ac

THERMAL CHARACTERISTICS
Thermal Resistance (TL = 25a C)

Junction to Lead

13

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 A, TJ = 25aC)
(iF = 1.0 A, TJ = 150aC)

vF

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage. TJ = 25aC)
(Rated de Voltage, T J = 150aC)

iR

Maximum Reverse Recovery TIme
(iF = 1.0 A, di/dt = 50 NILS)
(iF = 0.5 A, iR = 1.0 A, IR to 0.25 A)

trr

Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 NILS, Ree. to 1.0 V)

tfr

(1) Pulse Test: Pulse Width

Volts
0.875
0.71

1.25
1.05

2.0
50

5.0
150

35
25

75
50

25

50

pA

ns

ns

= 3001'5. Duty Cycle'" 2.0%

Rev2

4-2

Rectifier Device Data

MURS120T3, MURS160T3
MURS120T3 - - - - - - - - - - - - - - 0

0
0
0
« 48
-'> 2
O. 8
g; o. 4
~ o. 2
~ 0.08
~ 0.04
0:::
0.02

7

III

5

/

3
~

TC

175'C

/

2

~

~
!Z
g§

a

III

1

~

Ih5'C

175'C

I-

>--

TJ

-----

~

100'C

....-

/'

TJ

25'C

e- -----

~O.OO 8
0.004
0.002

20

I

O. 5

1/ I II

0.3

60
80
100
120 140
VR. REVERSE VOLTAGE (VOLTS)

160

180

200

Figure 2. Typical Reverse Current'

/

•

"The curves shown are typical for the highest voltage device in the voltage grouping. Typical
reverse current for lower voltage selections can
be estimated from these same curves if applied
VR is sufficiently below rated VR.

//I

/ II /

O. 1

40

/

/

U)

!f.

100'C

0.7

@ o. 2
~
:z
~
;;::

-

~

rIJ

/ /

Cl

'"~

/

II III

TJ

I--

0,07

50

0.05

I III

0.03

0.4

0.5

~

35

u

30

w

LII

I III

TY~\CAL -

NdE:
CAPACITANCE AT
OV ~ 45pF

40

I

0.02

0.0 1
0.3

45

I

:z

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

vF. INSTANTANEOUS VOLTAGE (VOLTS)

~

25

U

15

,

20
«
u

\

10

........

Figure 1. Typical Forward Voltage

oo

10

-

20

30
40
50
60
70
VR. REVERSE VOLTAGE (VOLTS)

80

-

90

100

Figure 3. Typical Capacitance

5

0
9

VOLT~GE A~PL1ED

TJ

RATEb
ROJC ~ 13'CW
TJ ~ 175'C

8

7

4

f---(CAPACITANCE LOAD)

r-.

['-

r----:::t'----

3

SQUAREWAVE

2

~

100

f:::::

120
140
TC. CASE TEMPERATURE (OC)

Figure 4. Current Derating, Case

Rectifier Device Data

""

AV

20

10

/

V

:/ V
v
/ /
/ ' V ..... ~
/ ....-/' ~ P
~ 1::;:::--1-'"

1

160

~~

1/

2

1
80

175'C
SQUARE WAVE

6
5

~

4

./

5

~

J-.

Va;

~
180

0.5
1
1.5
2
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Power Dissipation

2.5

MURS120T3, MURS160T3
MURS160T3
400
200
100

0
7

/

5
3

'"

1M

II rl

2

iC

i

/
TC - 175"CI

=>
~

ffi

O. 7

=>

o. 5

~

u

0.04
0.02
0.008
0.004

•

~

I I
I ~j
I I

O. 3

f2

=> o. 2
'"
fil
z

j'!
z

o

100

200
300
400
500
VR, REVERSE VOLTAGE (VOLTS)

0.03
0.0 2

I I

0.0 1
0.3

0.5

NO~E:

20

~
~

u

z

\
\

15

j'!

\

U

0.7

800

TYP:CAL I - CAPACITANCE AT
I-OV ~ 24pF

I

I II I
I I
II I

600

Figure 7. Typical Reverse Current"

25
0.0 5

25"C,=

V

'The curves shown are typical for the highest voltage device in the voltage grouping. Typical
reverse current for lower voltage selections can
be estimated from these same curves if applied
VR is sufficiently below rated VR.

II I

t;i o. 1
~

,.....

I--

......

I

~

I--'"

~ 0.1

S

I-

0.4

~ 0.2

I 1//

1

l00'C=

-

10

u

100"C

25"C

/

175'C

TJ

1 ~~

/

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

;;::
5

10

u

\

'" -

vF, INSTANTANEOUS VOLTAGE (VOLTS)

...........

Figure 6. Typical Forward Voltage

o

o

12
16
20
24
28
VR, REVERSE VOLTAGE (VOLTS)

32

36

40

Figure 8. Typical Capacitance

10
ICAPACITANCE LOAD)

iC
l-

i

-

=>

u

~

i.f2

'--

~

'"~
~

~

ROJC ~ 13'CW
TJ ~ m'c

"""-

-..........

TJ

~

175"C

/

10/

I
II

............

I /

~

SQUARE' ~
WAVE

~

80
120
TC, CASE TEMPERATURE ("C)

Figure 9. Current Derating, Case

4-4

IAV

V
/

V

i!=

40

I

!EK ~ 20j

RATE~ VOLT~GE A~PLlEO

'"

S

/
/

/

/I

SQUARE WAVE/",

/

L. DCL
/'

./.

.,,/ ./"

I V '/ ,./'"
/ /
/ l/':: ~

"

160

~ ~

.~

200

~

~

0.5
1
1.5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 10. Power Dissipation

Rectifier Device Data

2.5

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MURS320T3
MURS360T3

Surface Mount
Ultrafast Power Rectifiers

Motorola Preferred Devices

· .. employing state-of-the-art epitaxial construction with oxide passivation and metal overlay contact. ' - - - - - - - - - - - - - - - '
Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, , . - - - - - - - - - - - - - ,
in surface mount applications where compact size and weight are critical to the system.
ULTRAFAST RECTIFIERS
• Small Compact Surface Mountable Package with J-Bend Leads
3.0 AMPERES
• Rectangular Package for Automated Handling
200-600 VOLTS
• Highly $table Oxide Passivated Junction
• Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 3.0 A, T J = 150a C)

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 217 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260 a C Max. for 10 Seconds
• Shipped in 16 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Marking: U3D, U3J

•

CASE 403-03

MAXIMUM RATINGS
MURS
Rating

Symbol

32OT3

360T3

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

200

600

Volts

Average Rectified Forward Current

IF(AV)

3.0 @ TL = 140aC
4.0 @ TL = 130'C

3.0 @ TL = 130'C
4.0@TL= 115'C

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave,
single phase, 60 Hz)

IFSM

75

Amps

TJ

-65 to +175

'C

Operating Junction Temperature

THERMAL CHARACTERISTICS
Thennal Resistance - Junction to Lead

11

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 3.0 A, TJ = 25'C)
(iF = 4.0 A, TJ = 25'C)
(IF = 3.0 A, TJ = 150'C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25'C)
(Rated dc Vonage, TJ = 150"C)

iR

Maximum Reverse Recovery Time
(IF = 1.0 A, dildt = 50 AIl's)
(IF = 0.5 A, iR = 1.0 A, IREC to 0.25 A)

trr

Maximum Forward Recovery Time
(IF = 1.0 A, dildt = 100 AIl'S, Recovery to 1.0 V)

tfr

Volts
0.875
0.89
0.71

1.25
1.28
1.05

5.0
15

10
250

35
25

75
50

25

50

p.A

ns

ns

<1) Pulse Test: Pulse Width = 300 P.s, Duty Cycle", 2.0%

Rev 2

Rectifier Device Data

4-5

MURS320T3, MURS360T3
MURS320T3 - - - - - - - - - - - - - 80
0
0
8
4
!Z 2
~ o. 8
o.4
~ o.2
!l;! 0.08
~ 0.04
Ji:. 0.02
0.008
0.004
0.00i

L

1-

II I /

/11

le
~

~

/

a:
u

:::>

TJ = 175'C_

~

~
a:
~

~

/.. U- f-loo!C

.!f. 0.2

I j

I I

0.1
0.2

0.3

0.4

2S'C

20

~

--

100'C

a

1-2S'C

I

II

0.3

V>

•

r

175"C

j

I

0.7

::a~ o.S
>!:

/ II

TJ

40

...~

60
80
100 120 140
VR, REVERSE VOLTAGE IVOLTS)

160

180

200

Figure 2. Typical Reverse Current*

I

·Thecurves shown are typical for the highest voltage device In the voltage grouping. Typical reverse
currenllor lower voltage selections can be estimated from these same curves if VR is sufficiently below

/ I I

ratedVR·

O.S
0.6
0.7
0.8
0.9
1
vF, INSTANTANEOUS VOLTAGE IVOLTS)

1.1

1.2

Figure 1. Typical Forward Voltage

I!APACI~IVE LO~D)
7

IpK
IAV

6

5
4

/

3

=

.

1
0

10

/
V
V /
./ /1-""

/ / /'

2

5

20

V~ ~ ~

....-:::: P

V
,/

,/

.A
~ "-7

~

SQUARE_
rWAVE

~

1
2
3 .
4
IFIAV), AVERAGE FORWARD CURRENT lAMPS)

Figure 3. Power Dissipation

10
200

le
~
!Z

RATEb VOLT~GE A~PLlED
ROJC = 11'CiW
TJ = 17S'C

~
a:

ac
~~

r--...: ~

"'"

w

~

Z

~

~C

SQUARE'" ~
WA'fE

~

::t
~ 1

~

TYPICAL CAPACITANCE AT 0 V = 135 pF
100
.9- 80
iL:

a
90

100

110

"

~
cj

~

~

"

120 130 140 lS0 160
TC, CASE TEMPERATURE I'C)

Figure 4. Current Derating (Casel

170

\

60

'\

40
30

..........

20
180

190

10

o

w w

-

~
40
~
80
~
VR, REVERSE VOLTAGE IVOLTSI

80

00

Figure 5. Typical Capacitance

Rectifier Device Data

~

MURS320T3, MURS360T3
MURS360T3

/

V I II

/

TJ = 175'C

I~

.; IL-,,
/

~

a

r--

25'C

1

100'C

~
~
~

/

l00"/:=

2

~

~ 0.7

I

~ 0.5

I

I

I

0.3

I

I I
I I
II

;5
z
;5 0.2
U)

;0;

.!f.
0.1

TJ - 175"C=

)....-1-

25oC.-'"

a:

s:

~~

:

O.B
0.4
~ 0.2
O.OS
2' 0.04
0.02
O.OOS
0.004

//

-

400
200
80
40
20

o

100

200
300
400
500
VR, REVERSE VOLTAGE VOLTS

800

600

Figure 7. Typical Reverse Current*
·Thecurves shown are typical for the highest voltage device in the voltage grouping. Typical reverse
current for lower voltage selections can be estimated from these same curves if VR is sufficiently
be!ow rated VR'

0.07

0.05

I I

II

0.03
0.02
0.3

'I II I
0.5

I

0.7

SQUARE
WAVE
0.9
1.1
1.3
1.5
1.7
1.9
vF, INSTANTANEOUS VOLTAGE (VOLTS)

2.1

2.3

(CAPACITIVE LOADS)
-I-!EK = 20
t--I-IAV"l

10

'';I' . / 5~

/~ ~

Figure 6. Typical Forward Voltage

./

....- V

0
//

DC

~

... ,....~ ~
1
2
3.
4.
IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 8. Power Dissipation

100
9

80

TYPICAL CAPACITANCE AT 0 V - 75 pF

~

~ 60

z

............. :::::---..

~

u

,,~

SQUARE

1AVE
80

90

~
u

~:..

-.....;:

::::::-..

100 110 120 130 140
TC, CASE TEMPERATURE ('C)

~
150

Figure 9. Current Derating (Case)

Rectifier Device Data

40

c.J

20

\

\

'\
'-..

I'..

160

170

20

40
60
VR, REVERSE VOLTAGE (VOLTS)

100

80

Figure 10. Typical Capacitance

4-7

•

MOTOROLA

•

SEMICONDUCTOR - - - - - - - - - - - -

TECHNICAL DATA

SWITCH MODE Power Rectifiers

MURD320

DPAK Surface Mount Package
· .. designed for use in switching power supplies, inverters and as free wheelin'g diodes, these
state-of-the-art devices have the following features:

MURD320I.a
Motorola Preferred Device

• Ultrafast 35 Nanosecond Recovery Time
• Low Forward Voltage Drop
• Low Leakage
Mechanical Characteristics:

•

• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
'
• Shipped 75 units per plastic tube
• Available in 16 mm Tape and Reel, 2500 units per reel, by adding a "T4" suffix to the
part number
• Marking: U320

ULTRAFAST
RECTIFIERS
3 AMPERES
200 VOLTS

4

369A-13
DPAK

MAXIMUM RATINGS
Symbol

Value

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

200

Volts

Average Rectified Forward Current (TC = 158°C, Rated VR)

IF(AV)

3

Amps

Peak Repetitive Forward Current
(Rated VR' Square Wave, 20 kHz, TC = 158°C)

IFRM

6

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, 60 Hz)

IFSM

75

Amps

TJ' Tstg

-65 to +175

°C

Operating Junction and Storage Temperature

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Junction to Ambient (1)

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage Drop (2)
(iF 3 Amps, TJ 25°C)
(iF 3 Amps, TJ 125°C)

vF

Maximum Instantaneous Reverse Current (2)
(TJ 25°C, Rated de Voltage)
(TJ 125°C, Rated de Voltage)

iR

=
=

=
=

=
=

5
500

Maximum Reverse Recovery TIme
(IF 1 Amp, dildt 50 Amps/~s, VR 30 V, TJ 25°C)
(IF 0.5 Amp, iR 1 Amp, IREC 0.25 A, VR 30 V, TJ

=
=

=
=

=

=

Volts
0.95
0,75

=
=

ns

trr

=25°C)

IlA

35
25

(1) Rating applies when surface mounted on the minimum pad sizes recommended.
(2) Pulse Test: Pulse Width 300 ~, Duty Cycle S 2%.

=

Rov 1

Rectifier Device Data

MURD320
TYPICAL CHARACTERISTICS

100

100
40
20
10

0

4
2

1
~
a:

0

a:;

0

~
f/

-

a:
0.1
.ff: 0.04
0.02
0.0 1
0.004
0.002
0.0010

~~

0

0.4
0.2

~ :/

/

lW'C

-

'/

2

175'C ....

N

150'C ...

'rh L

1

0.5

J

fo""

20

40

60
80 100 120 140
VR, REVERSE VOLTAGE (VOLTS)

!-100'C

4
3
2
1
0
9
1/10
8f--- r--lpI(IIAV = 20
7

/

J

/

1/
/

1/

~
~ ~
~~

1/

3
2
0.2

200

Figure 2. Typical Reverse Current*

O. 2

o

180

I.- TJ = 25'C

I

O. 1

160

grouping. Typical reverse current for lower voltage selections can be
estimated from these curves if VR is sufficient below rated VR.

I

0.3

..--wC

*The curves shown are typical forthe highest voltage device in the voltage

h / /
VI 1/ II

3

-

100'C

~

/. /

5

175'C

TJ

0.4
0.6
0.8
VF, INSTANTANEOUS VOLTAGE (VOLTS)

1.2

1.4

/

SINE WAVE- ht
SQUARE WAVE ---.' ~

/V

/5

/'

/

dc-';;

]

/

/

V/

./V

/V

V./ . /

"./

/'
./

V

./

TJ = 175'C f - -

/

~

2345678
IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 1. Typical Forward Voltage

10

Figure 3. Average Power Dissipation

8

4
RATED VOLTAGE APPLIED
R8JC = 6'CIW-

7
6

"'" '"

5

SINE WAV'E'-..
OR
SQUARE WAVE
3
TJ = 175'C
2

110

1~

"'"1\

S

~
........

2

~

Figure 4. Current Derating. Case

OR

11--

f\

170

~ r-.....

SINEW~ Nc
........

5

,,~c

1~
MO
lW
WO
TC, CASE TEMPERATURE ('C)

Rectifier Device Data

R8JAI=80yW

3_

1
0
100

RATEb VOLTlGE AplpLiED

5

t-- SiUARE

S
180

0

i

AVE

SURFACE JOUNTlD ON I
MIN. PAD SIZE RECIOMMENDED
TJ = 175'C

~

~b.

~

20

40

I

60
80
100 120 140
TA, AMBIENT TEMPERATURE ('C)

'"

160

180

Figure 5. Current Derating. Ambient

4-9

200

•

MURD320

lK
500

300

~200

TJ = 25°C- -

~

z

;5 100

~

5

r..i

50
0

i:'"""-..

0
10

o

m w

~

~

~

W

M

W

00

~

VR. REVERSE VOLTAGE (VOLTSI

Figure 6. Typical Capacitance

•

4-10

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

SWITCH MODE Power Rectifiers

MURD620CT

DPAK Surfilce Mount Package
· .. designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following features:

MURD820CT ,. a
Motorola Preferred Device

• Ultrafast 35 Nanosecond Recovery Time
• Low Forward Voltage Drop
• Low Leakage
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 75 units per plastic tube
• Available in 16 mm Tape and Reel, 2500 units per reel, by adding
a "T4" suffix to the part number
• Marking: U620T

ULTRAFAST
RECTIFIERS
6 AMPERES
200 VOLTS

a
PLASTIC

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Voltage
(TC = 140°C, Rated VR)

Per Diode
Per Device

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, T C = 145°C)

Symbol

Value

Unit

VRRM
VRWM
VR

200

Volts

IF(AV)

3
6

Amps

IF

6

Amps

IFSM

50

Amps

TJ' Tstg

-65 to +175

°c

Per Diode

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, 60 Hz)
Operating Junction and Storage Temperature

THERMAL CHARACTERISTICS PER DIODE
Thermal ReSistance, Junction to Case
Junction to Ambient (1)

ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage Drop (2)
iF = 3 Amps, TC = 25°C
iF = 3 Amps, TC = 125°C
iF=6 Amps, TC = 25°C
iF = 6 Amps, TC = 125°C

vF

Maximum Instantaneous Reverse Current (2)
(TJ = 25°C, Rated de Voltage)
(TJ = 125°C, Rated de Voltage)

iR

Maximum Reverse Recovery lime
(IF = 1 Amp, di/dt = 50 Ampsills, VR = 30 V, TJ = 25°C)
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C)

trr

Volts
1
0.96
1.2
1.13

!lA
5
250
ns
35
25

(1) Rating applies when surface mounted on the minimum pad sizes recommended.
(2) Pulse Test: Pulse Width = 300 118, Duty Cycle"; 2%.

Rev 1

Rectifier Device Data

4-11

I

MURD620CT

100

100

_
1

0

!Z

0

150°C

l!§

:::>

l00'C

u

0

w

!
_

0

1. ~
1,

/

0.00 1

I'

20

40

60
SO
100 120 140
VR. REVERSE VOLTAGE (VOLTS)

I
IpllAV

,

= 20,

175'C .... ~

.f...

I

...-

o

/

1.2

"

SINE WAVE'OR
SQUARE WAVE

120

de

V

k"de

~/

TJ

= 175°C r---

~

"- ~

130
140
150
160
TC. CASE TEMPERATURE ('C)

R8JA

~

2.5

........

~

r--.....

I--- ~

~
w

1.5

~

1

o

20

Figu~e

40

60

TJ

de

SINEWAVE ~
OR
SQUARE WAVE

5: 0.5
S
.J:. 0

180

= SO'CtW

SUR~ACE M'oUNTEb ON I
MIN. PAD SIZE RECiMMEjDED-

g§

~

170

10

R~TED VdLTAGE'APPLIEb

~ 3.5

~

Figure 4. Current Derating. Case (Per Leg)

4-12

./

2
4
6
S
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

ao

~

110

/

~

"~

1

~

/
/

WAVE/

Figure 3. Average Power Dissipation (Per Leg)

R8JC = g'C/W
TJ = 175°C_I - -

...........

~

/

/

'/

6'

1.4

RlTED VOLtAGE AP~L1ED

~

I

/

I

~QUARE

V~,...

0.4
0.6
O.S
1
vF. INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage (Per Leg)

5

200

1// /~ V'

I

0.2

/

/

'l ./
/ / .// /"
/ 1/ Y'

10,'C
.....- TJ - 25'C

O. 1

5/ SINE--,
/
WA~

1,/

r--

O.3

ISO

Figure 2. Typical Leakage Current* (Per Leg)

7

150'C....

160

*The curves shown are typical forthe highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be
estimated from these curves if VA is sufficient below rated VR.

IJ /I!
/
:11 I I

O. 5

~

.-

o

III

I

1

....-

25~C_

0.0 1

/IV
'/1 I

2

.....-

O. 1

,,-

L
11'1'

7

•

175°C

TJ
10

0-.

........

~

~

= 175°C

"'"

SO
100 120 140 160
TA. AMBIENT TEMPERATURE (OC)

180

5. Current Derating. Ambient (Per Leg)

Rectifier Device Data

200

MURD620CT

10 0
0
0

;;:3o

\

TJ

~2o \

z

~1 0

~u

U

~

25°C

\

7
5

3
2

1

w

~

~

~

~

~

M

M

M

~

VR. REVERSE VOLTAGE IVOLTSI

Figure 6. Typical Capacitance (Per Leg)

•

Rectifier Device Data

4-13

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Designer'sTM Data Sheet
SWITCHMODETM Power Rectifiers

MURHB840CT
Motorola Preferred Device

D2PAK Power Surface Mount Package
Designed for use in switching power supplies, inverters and as free wheeling diodes,
these state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•
•

•

Package Designed for Power Surface Mount Applications
Ultrafast 28 Nanosecond Recovery TImes
175°C Operating Junction Temperature
Epoxy Meets UL94, Vo @ 1/8"
High Temperature Glass Passivated Junction
High Voltage Capability
Low Leakage Specified @ 150°C Case Temperature
Short Heat Sink Tab Manufactured - Not Sheared!
Similar in Size to Industry Standard TD-220 Package

:: :: r---a

ULTRAFAST RECTIFIER
8.0 AMPERES
400 VOLTS

,~'

4

3

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Available in 24 mm Tape and Reel, 800 units per reel by adding a
"T4" suffix to the part number
• Marking: UH840

CASE 418B-02
02PAK

MAXIMUM RATINGS, PER LEG
Rating
Peak Repetitivo Reverse Voltage
Working Penk Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Rated VR), TC

=120°C

Symbol

Value

Unit

VRRM
VRWM
VR

400

Volts

IF(AV)

4.0
8.0

Amps

IFM

8

Amps

IFSM

100

Amps

Total Device
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), T C

=120°C

Non-repetitive Peak Surge Current
(Surge applied at rated load ocnditions halfwave, single phase, 60 Hz)
Controlled Avalanche Energy

WAVAL

20

mJ

Operating Junction Temperature and Storage Temperature

TJ, TstQ

-65 to +175

°C

THERMAL CHARACTERISTICS, PER LEG
Maximum Thermal Resistance - Junction to Case
- Junction to Ambient (1)
(1) See Chapter 7 for mounting conditions

Preferred devices are Motorola recommended chOices for future use and best overall value.

DeSigner's Data for "Worst Case" Conditions - The DeSigner's Data Sheet permits the deSign of most circuits entirely from the information presented.Umitcurvesrepresenting boundaries on device characteristics - are given to facilitate ''worst case" design.

Rev 1

4-14

Rectifier Device Data

MURHB840CT

ELECTRICAL CHARACTERISTICS, PER LEG
Characteristic

Symbol

Max

Unit

vF

1.9

Volts

iR

500
10

IIA

trr

28

ns

=4.0 Amps, TC =150°C)
=4.0 Amps, T C =25°C)
(Rated de Voltage, TC =150°C)
(Rated de Voltage, T C =25°C)

Maximum Instantaneous Forward Voltage (2)

(iF
(iF

Maximum Instantaneous Reverse Current (2)

2.2

Maximum Reverse Recovery TIme
(IF 1.0 Amp, di/dt 50 Amps/lis)

=

=

(2) Pulse Test Pulse Width

= 300 IlS, Duty Cycle ::>2.0%

ii:"

! 100
SO
m

1000
500

I-

~
::::J

20

c
a:

10

U

~

'""

~

~

L

§z

L £

~

100°C

-

2SoC -

==

,-

//

~ 0.2

0.10.4 I. I
0.6

100
~
a: 50
a:

::::J

u

2.2

0.8

1.2 1.4 1.6 1.8
VF, INSTANTANEOUS VOLTAGE (VOLTS)

2.4

l000C ~

20

!Iiw

10
5

Ji:.

1

(ij
a:

~ 0.5
>!'
LL.

TJ = IS0°C

~ 200

TJ=IS0°C

25°C.

O.S

0.2
o. 1 a

ii)

10

I I

z

........

Q

~
en
en

t-.....

"

..........

i5
a:
w

s:
0

0..
W

WAVE

~

......

u:.
110

120

~

130
140
150
160
TC, CASE TEMPERATURE (OC)

Figure 3. Current Derating, Case

Rectifier Device Data

200

250

300

350

400

1000~!III!!III!1111111

I

.......

~

o

I

,

I"-..:

W

150

.........
......... f'..DC

SQUA~

4

100

Figure 2. Typical Reverse Current, Per Leg

RATED VR APPLIED
R9JC= 3°CNI

~

50

VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

!ii

=

,

170

180

1.~~UU~~~~~~~~~~~~~

0.01

0.1

1

10

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Typical Capacitance, Per Leg

4-15

MURHB840CT

~

20

~ 18

is

~

CIJ

I
I
TJ=175°C

-

16

/DC

14

V /'
/' / '
./ : /
/' /"
. /V

~ 12

~

10

~ 8
w

~

CI:

/

A'

SQUARE WAVE /

6

~ 4

~ 2 l...,..;'P'"~

~O

V

2

3

4

5

6

10

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Forward Power Dissipation, Per Leg

INFORMATION FOR USING THE 02PAK SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
between the board and the package. With the correct pad
geometry, the packages will self align when subjected to a
solder reflow process.

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to insure proper solder connection interface

'"

108:~1
II

0.065

L-J

1.651

r .-------,
I'

0.420 _

r--- _ ___ ___ - ~

10.66

11-'-

0.07

L--.J~ 1.78

I

r-

0.330---1
8.38

I
--J

.Q:!!
3.56

I

r(~
mm

D2PAK POWER DISSIPATION
The power dissipation of the 02PAK is a furiction olthe drain
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction temperature of the die,
RaJA. the thermal resistance from the device junction to
ambient; and the operating temperature, TA. Using the values
provided on the data sheet for the 02PAK package, Po can be
calculated as follows:
P

_

0-

TJ(max) - TA
RSJA

The.values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into

4-16

the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 3.0 watts.
Po

= 175°C -

25°C

50°C/W

=3.0 watts

The 50°C/W for the D2PAK package assumes the
recommended drain pad area of 158K mil 2 on FR-4 glass
epoxy printed circuit board to achieve a power dissipation of
3.0 watts using the footprint shown. Another alternative is to
use a ceramic substrate or an aluminum core board such as
Thermal Clad™. By using an aluminum core board material
such as Thermal Clad, the power dissipation can be doubled
using the same footprint.

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Designer'sTM Data Sheet
SWITCHMODETM Power Rectifiers

MURB1620CT
Motorola Preferred Device

D2PAK Power Surface Mount Package
Designed for use in switching power supplies, inverters and as free wheeling
diodes, these state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

Package Designed for Power Surface Mount Applications
Ultrafast 35 Nanosecond Recovery Times
175°C Operating Junction Temperature
Epoxy Meets UL94, Vo @ 1/8"
High Temperature Glass Passivated Junction
Low Leakage Specified @ 150°C Case Temperature
Short Heat Sink Tab Manufactured - Not Sheared!
Similar in Size to Industrial Standard TO-220 Package

Mechanical Characteristics

ULTRAFAST RECTIFIERS
16 AMPERES
200 VOLTS

:: :: t---o

4

,~'
3

• Case: Epoxy, Molded
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max.
for 10 Seconds
• Shipped 50 units per plastic tube
• Available in 24 mm Tape and Reel, 800 units per reel by adding a "T4" suffix to the part number
• Marking: U1620T

CASE 4188-02

•

02PAK

MAXIMUM RATINGS, PER LEG
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated VR), TC 150°C

=

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), T C

Symbol

Value

Unit

VRRM
VRWM
VR

200

Volts

IF(AV)

8
16

Amps

IFM

16

Amps

IFSM

100

Amps

TJ, Tstg

-65to +175

°c

Total Device

=150°C

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction and Storage Temperature

THERMAL CHARACTERISTICS, PER LEG
Maximum Thermal ReSistance, Junction to Case

RSJC

3

°CIW

Maximum Thermal Resistance, Junction to Ambient(l)

RaJA

50

°CIW

TL

260

°C

Temperature for Soldering
Purposes; 1/8" from Case for 5 Seconds
(1) See Chapter 7 for Mounting Conditions.

Preferred deVICes are Molorola recommended choices for future usa and bast overall value,
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet perrmts the design of most CIrcUits entirely from the infcnnatlon presented. limit curves -representing
boundaries on device characterisbcs - are given to facilitate "worst case~ design.

Rev 1

Rectifier Device Data

4-17

,

MURB1620CT

ELECTRICAL CHARACTERISTICS, PER LEG
Characteristic

vF

Maximum Instantaneous Reverse Current (2)
(Rated de Voltage, TC 150"C)
(Rated de Voltage, T C 25"C)

iR

Maximum Reverse Recovery Time
(IF 1 Amp, di/dt 50 Amp/its)
(IF 0.5 Amp, iR 1 Amp, IREC

trr

=
=

=
=

=
=

Unit
Volts

0.895
0.975

=
=

=
=

Max

Symbol

Maximum Instantaneous Forward Voltage (2)
(iF 8 Amp, TC 150"C)
(iF 8 Amp, TC 25"C)

f1A
250
5
ns
35
25

=0.25 Amp)

(2) Pulse Test: Pulse WIdth = 300 IlS, Duty Cycle S2.0%.

~ 100

•

~

50

!z
II!

20

a:

a

10

€2

5.0

f2

2.0

~
a:

10K
~/

./ ./ ./

1.0 =

§g

iil

0.7

~
;:::

0.3

z

en

~
.~

;;: 1.OK

""/

=

.:;

400

!z
w

100

a:
a:
=>
'-'
w
en
a:
w
>
w
a:

TJ=175"Ch= f=/100"C/25"C

c:

I

/
I

O. 1
0.2

0.4

20

10

~

9.0

Q

B.O

u;
en

7.0

~
z

~

is

6.0

~w

5.0

a:

~w
~

1.0

il:"

0

fi)

~
~

.~ .~
",'

V
SQUARE WAVE.....

./"
. /' . . /
../ . /

3.0

1M

"

Figure 3. Current Derating Case, Per Leg

lBO

200

V

TJ=175"C

4.0

0-

1~

160

10
9.0

5.0

TC. CASE TEMPERATURE ("C)

4-18

60
BO
100 120 140
VR, REVERSE VOLTAGE (V)

6.0

~
lBO

E

1.0

/"

"i""" V

DC

"

. /I/'"

2.0

~
150

40

7.0

~,

~

140

20

B.O

2.0

~

....

Figure 2. Typical Reverse Current, Per Leg'

~DC

SQUARE WAVE

3.0

25"C

0.2

0.01 0

1.2

RATED VR APPLIED
ReJC= 3"CIW

4.0

,....

0.04
I

0.6
O.B
VF,INSTANTANEOUS VOLTAGE (V)

"'

TJ = 175"S-

loo"C

Figure 1. Typical Forward Voltage, Per Leg

fi)

r--- r-

~

~~

234567B
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 4. Power Dissipation, Per Leg

Rectifier Device Data

10

MURB1620CT

~

i

D= .5

0.5

--.....-

w

tJ
Z

;5

0.2

ffi
a:

0.1

en

~

ffi
~

0.1

~

0.02

~~

......

~

0.02

tJUl
-j ---I

0.05

I

0.1

ZruC(I) = r(l) Rruc
Dcurves apply for power
pulse Irain shown
read lime atT1

11 1
.... 12
Duty Cycle, D = 11ft2 TJ(pk) - TC = P(pk) ZSJC(I)

..... S N lE P LSE

:if

~ 0.Ob.01

P(pk)

i'"'"

~-

0.05
0.01

0.05

i!:

tz

- - :J:.

0.2

0.5

I II

10

2

20

50

lill

100

200

500

1K

I, TIME (ms)

Figure 5. Thermal Response

•

1K

300
~

.e.
w

tJ

Z

;5 100

.

~

-

TJ = 25°C

r-

tJ

c5

30

10
VR, REVERSE VOLTAGE (V)

100

Figure 6. l'fplcal Capacitance, Per Leg

Rectifier Device Data

4-19

I

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Designer'sTM Data Sheet
SWITCHMODETM Power Rectifiers

MURB1660CT
Motorola Preferred Device

D2PAK Power Surface Mount Package
Designed for use in switching power supplies, inverters and as free wheeling
diodes, these state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•
•

Package Designed for Power Surface Mount Applications
Ultrafast 60 Nanosecond Recovery limes
175°C Operating Junction Temperature
Epoxy Meets UL94, Vo @ 1/8"
High Temperature Glass Passivated Junction
High Voltage Capability to 600 V
Low Leakage Specified @ 150°C Case Temperature
Short Heat Sink Tab Manufactured - Not Sheared!
Similar in Size to Industrial Standard TO-220 Package

ULTRAFAST RECTIFIERS
16 AMPERES
. 600 VOLTS

::

::

~4

,~.
3

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max.
for 10 Seconds
• Shipped 50 units per plastic tube
• Available in 24 mm Tape and Reel, 800 units per reel by adding a '74" suffix to the part number
• Marking: U1660T

CASE 418B-02
02PAK

MAXIMUM RATINGS, PER LEG
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated VR), TC 150°C

Value

Unit

VRRM
VRWM
VR

600

Volts

8

Amps

IF(AV)

=

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC

Symbol

Total Device

=150'C

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)
Operating Junction and Storage Temperature

16
IFM

16

Amps

IFSM

100

Amps

TJ, Tstg

-65to+175

'c

THERMAL CHARACTERISTICS, PER LEG
Maximum Thermal Resistance, Junction to Case

RruC

2

'CIW

Maximum Thermal Resistance, Junction to Ambient(l)

RaJA

50

°CIW

TL

260

'c

Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) See Chapter 7 for Mounting Conditions

Preferred devices are Motorola recommended choices for future use and best overall value.

DeSigner's Data for "Worst Case" Conditions - The DeSigner's Data Shoet permits the design of most circuits entirely from the information presented. Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

Rev 1

4-20

Rectifier Device Data

MURB1660CT

ELECTRICAL CHARACTERISTICS, PER LEG
Characteristic

Symbol

Maximum Instantaneous Forward Voltage (2)
(iF =8 Amp. TC =150°C)
(iF =8 Amp. T C =25°C)

vF

Maximum Instantaneous Reverse Current (2)
(Rated dc Voltage. T C = 150°C)
(Rated dc Voltage. T C =25°C)

iR

Maximum Reverse Recovery lime
(IF =1 Amp. di/dt =50 Amp/lJ-S)
(IF =0.5 Amp. iR = 1 Amp. IREC =0.25 Amp)

t"

Max

Unit
Volts

1.20
1.50
~

500
10
ns
60
50

(2) Pulse Test: Pulse Width = 300 ~s, Duty Cycle S2.0%

~

~

100
50

~

20

a:
a:

B
~

~P_
en

TJ I=

15~OC

10

~

....

./

./

.......

-

25°C ~ ~

5.0

1.0

~

O. 3

<" 1.0K
E,

400

IZ

100
40

w

a:
a:

:::>
0

100°C

/

10

w
en
a:
w
>
w

2.0

§

10K

2.0
1.0
0.4

a:

0:

z

~
en
;;;;

.~ 0.1 0.4

/

100°C

....

25°C

0.1
0.04

1/

1/
0.6

TJ = 150°C

0.Q1

0.8

1

1.2

1.4

1.6

100

1.8

200

300

Figure 1. Typical Forward Voltage, Per Leg

10
8.0

I"

7.0

en
~

4.0

~

1.0

ir

o

140

,"

C

"
""
~"'

~o..

.....

~

2.0

150

"'

Figure 3. Current Derating, Case, Per Leg

Rectifier Device Data

/'
./

B.O
7.0
6.0

~1.0

180

&-

0

/
/

'"/ ' / '
DC

V V
/' /'
./' / '
./

/'

~ 3.0
.... 2.0

~

/

SQ~ARE~AVE

~ ~:~

160
170
TC. CASE TEMPERATURE (0C)

600

I
I

~ 9.0

SQUARE WAVE

3.0

14
13
12
11

~
~
~ 10

"'-DC

......

6.0
5.0

500

Figure 2. Typical Reverse Current, Per Leg

RATED VR APPLIED
R9JC=2°CIW

9.0

400

VR. REVERSE VOLTAGE (V)

v;; INSTANTANEOUS VOLTAGE (V)

./

~

o

.......::: .....

"

"

TJ=1 1]50C I _

I

2
3
4
7
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 4. Power Dissipation, Per Leg

4-21

10

MURB1660CT

c
~
~

0:

~

w
<>
z

1.0
D= .5
0.5

~

0.2

0:

ffi

0.1

~
~

0.05

en

0:

!z
w

~

0.02

- i--

I- ;;..... fo-'"
~

..". fo-"'i-"

0.0
0,01

......-: .... ~IN
I-...-: -.,..,. fo-'"
0.02

0.05

P(pk)

tJUL
1---I
I

0.1

ZeJC(I) =r(l) ReJC
D curves apply lor power
pulse train shown
read lime atT1

- j t1
--t2
Duty Cycle, D =tl/!2 TJ(pk) - TC =p(pk) leJC(t)

L P LSE

I II

0.0 t

O.Ot

...-

0.1

0.2

IIIII

0.5

10

I

IIIIII

20

50

100

200

500

t, TIME (ms)

Figure 5. Thermal Response

1K

300
LL
S

w

<>
z
~

(3

100

l"- I- I--..

TJ = 25°C

........

cE

""

<>
<5

30

10
VR, REVERSE VOLTAGE (V)

100

Figure 6. Typical Capacitance, Per Leg

4-22

Rectifier Device Data

lK

MUR120
MUR140
MUR160

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

•

•

•

MUR120, MUR140and MUR160 are
Motorola Preferred Devices

Switch mode Power Rectifiers
· .. designed for use in switching power supplies, inverters and as free wheeling diodes,
these state-of-the-art devices have the following features:
•
•
•
•
•
•

ULTRAFAST
RECTIFIERS

Ultrafast 25, 50 and 75 Nanosecond Recovery Times
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 600 Volts

1.0 AMPERE
201l--400-600 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for
10 Seconds, 1/16N from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: U120, U140, U160

CASE 59-04
PLASTIC

MAXIMUM RATINGS
MUR
Rating

Symbol

120

140

160

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

200

400

600

Volts

Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 1)

IF(AV)

1.0 @ TA = 130°C

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, hallwave,
single phase, 60 Hz)

IFSM

35

Amps

TJ, Tstg

-65 to +175

°C

Operating Junction Temperature and
Storage Temperature

1.0@TA=I20°C

Amps

THERMAL CHARACTERISTICS
See Note 1

Maximum Thermal Resistance, Junction to Ambient

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp, TJ = 150°C)
(iF = 1.0 Amp, TJ = 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 150°C)
(Rated dc Voltage, TJ = 25°C)

iR

Maximum Reverse Recovery Time
(IF = 1.0 Amp, dVdt = 50 Amp/llS)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 A)

trr

Maximum Forward Recovery Time
(IF = 1.0 A, dVdt = 100 AiIlS, IREC to 1.0 V)

tlr

Volts
0.710
0.875

1.05
1.25

50
2.0

150
5.0

35
25

75
50

25

50

I'A

ns

ns

(1) Pulse Test: Pulse Width = 300 1lS, Duty Cycle'; 2.0%
Rev 3

Rectifier Device Data

4-23

MUR120, MUR140, MUR160

MUR120 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - FIGURE 2 - TYPICAL REVERSE CURRENT'

FIGURE 1 - TYPICAL FORWARD VOLTAGE
10

:~~~~~~~~~~~~~~~~~~

7.0

20~~~~::';;;;

1/

5.0

/

1/ /11

3.0

= 175"0/

TJ

2.0

/

rH

S.O ~

/

~a ~:~~~i~~i~~i~~~~~~~
~
a:

0.8
0.4
0.2
~ 0.08

I-l~

~ 1--25'C

~ ~:~~

/ /11
I

17SoC=

TJ

100°C "--

·The curves shown are typical for the htgheSl voltage
device in the voltilge grouping. TYPical reverse current
tor lower voltage selectiOns can be estimated trom
thete same curves .fVR IS sufl,clently below rated VR.

~j~i~E3

-+-+--1--=01
~

~~~;;I;;:~~~~~~~~~~~2S~oC~i=:==~

5- 0.004
O.OOS ~
0.002f--l--+--+-·- -+--If---+--+--l--+---I
0.001 0L --2L
O_.J
O-I.l00--12LO_.J140--1J.60--180L-.J200
40- -SLO--SL
VR. REVERSE VOLTAGE (VOLTS)

I

II N

/
III
I 11/

2

1

FIGURE 3 - CURRENT DERATING
(MOUNTING METHOD #3 PER NOTE 1)

Rated VR
R6JA = sooC/W

.!f.
0.05

.........

I III

0.03

~ave

0.4

0.5

.........

o

0.6
0.7
O.S
0.9 1.0
1.1
VF.1NSTANTANEOUS VOLTAGE (VOLTS)

1.2

o

1.3

so

~

~

/'

./

/" /

~ 1.0

~
0

./ s..v

~

---- - /'

./

~

I

~

/
/'

3.0

./

......

.........-

____

de . /

V

~~J.--"-

~F-0.5

o

4-24

200

50
40

(Capacitive Load) 1= 20AV

17J'C

~ 2.0
E

I~K

I

100
150
TA. AMBIENT TEMPERATURE

FIGURE 5 - TYPICAL CAPACITANCE

FIGURE 4 - POWER DISSIPATION

-TJ =

~

~

I JI

in 5.0

~ 4.0

~

III

0.01
0.3

~

~dc

Square...... ~

I

0.02

1;;.

:::--.....

""

I

1.0
1.5
2.0
'F(AV). AVERAGE FORWARD CURRENT (AMPS)

2.5

\

30

'\.

~

20

c.i

10
9.0
8.0
7.0
6.0
5.0

I

TJ

"r--...
...........

o

= 25°C

\.

10

---

20

30

40

VR. REVERSE VOLTAGE (VOLTS)

Rectifier Device Data

50

MU~160

MUR120, MUR140,

--------------------------------- MUR140,MUR160--------------------------------FIGURE 6 -

FIGURE 7 -

TYPICAL FORWARD VOLTAGE

10

400

7.0

ff--

TJ = 175'C/ /

/

I II I

1.0

~

0.5

'"

1/

///
I I
I I

~
f2 0.2

en

:::>

53
z

;5 0.1
z
;5
~ 0.07
.!:f.
0.05

0.02

0.01
0.3

FIGURE 8 - CURRENT DERATING
(MOUNTING METHOD #3 PER NOTE 11

~

~~

a

r·

oI - - i"'--..
~
......... '-....,
~ 2.0
I'-- ""'.dc
~
Squa .......

I

I

I

/I

I

~

I

I I
0.5

0.7

0.9
1.1
1.3
1.5
1.7 1.9
vF INSTANTANEOUS VOLTAGE (VOLTS)

:i(

o

2.3

50

r-0

~

I'..

100
150
TA. AMBIENT TEMPERATURE

FIGURE 10 -

TJ - 175'C

JOr---.-

10

2.0 _(Capacitive Load)

~

2.1

POWER DISSIPATION

~ 3.0

~

Wive

200

250

TYPICAL CAPACITANCE

20

'"

:i( 1.0

1.0

~
.i!=o

~

~~

Rated VR
R6JA = 5O'C/W

~ 4.0

5.0

z 4.0
o

5.0

~

FIGURE 9 -

-

!li
~

f-25'C

I

0.3

0.03

r--

i

I-100'F

I

a:

:::>
u

a:

1

1I11

2.0

0.7

/

VI

3.0

I-

200
100
TJ 175'C
40
20
IThe curves shown are typical or the highest voltage
10 device
in the voltage grouping. Typical reverse current
l4.0 for lower voltage selections can be estimated Irom
2.0 these same curves ifVR is sufficiently below ~~."""-F""'.j......-+-jf-.j......--l
:::>
1.0
u
0.4
I?' 25'(-0.2
0.1
.EF 0.04
0.02
O.OOB
0.004
200
300
400
500
0
100
600
BOO
VR. REVERSE VOLTAGE (VOLTS)

1/ /

/

5.0

5

TYPICAL REVERSE CURRENT"

~~ 20
AV

/

../": /"

./. ~t::--::: -;:::.....-

/"

. / ".f>.~'~
. / . / de

~. /

~ ~ ;::::;---

~ 0 ~~
0.5
o

1.0
1.5
2.0
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Rectifier Device Data

10
9.0

~8.0

:;:; 7.0
~ 6.0
~ 5.0

~u

4.0

c..i

3.0
2.0

2.5

T~ = 251c

\
"' ......

"'

.......

i"'--..
'""""----I

-

I--I--

o

10

20
30
VR. REVERSE VOLTAGE (VOLTS)

40

50

4-,-25

MUR120, MUR140, MUR160

NOTE 1 - AMBIENT MOUNTING DATA

Data shown for thermal resistance junction-toambient (R/lJA) for the mountings shown is to be used
as typical guideline values for preliminary engineering
or in case the tie point temperature cannot be measured.

TYPICAL VALUES FOR RuJA IN STILL AIR
LEAD LENGTH, L

MOUNTING
METHOD
1
2

R/IJA

1/8

114

112

UNITS

52

65

72

67

80

87

'cm
'cm
'em

50

3

MOUNTING METHOD 1

MOUNTING METHOD 2

~

Vector Pin Mounting

MOUNTING METHOD 3

~rjq
Board Ground
Plane
P.C. Board with
1-112" x 1-112" Copper Surface

4-26

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

SWITCHMODE Power Rectifiers
Ultrafast "E" Series
w/High Reverse Energy Capability

MUR190E
MUR1100E

· .. designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

MUR1100Elsa
Motorola Preferred Device

20 mjoules Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C 'Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
o--~~--o
Reverse Voltage to 1000 Volts

ULTRAFAST
RECTIFIERS
1.0 AMPERE
900-1000 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for
10 Seconds, 1/16" from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: U190E, U1100E
MAXIMUM RATINGS
MUR
Symbol

190E

1100E

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

900

1000

Volts

Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 1)

IF(AV)

1.0 @TA=95"C

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

35

Amps

TJ, Tstg_

-65 to +175

"C

Rating

Operating Junction Temperature and Storage Temperature

THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Ambient

See Note 1

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(IF = 1.0 Amps, TJ = 150"C)
(IF = 1.0 Amps, T J = 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, T J = 100"C)
(Rated dc Voltage, T J = 25"C)

iR

Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/lLs)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)

trr

Maximum Forward Recovery Time
(IF = 1.0 Amp, di/dt = 100 AmpilLs, Recovery to 1.0 V)

tfr

75

ns

WAVAL

10

mJ

Controlled Avalanche Energy (See Test Circuit in Figure 6)

Volts
1.50
1.75
~

600
10
ns
100
75

(1) Pulse Test: Pulse Width = 300 ILS, Duty Cycle ';;2.0%
Rev!

Rectifier Device Data

4-27

MUR190E, MUR1100E

ELECTRICAL CHARACTERISTICS

0

100

o
/

/

~

•

'"5

o.7

::>

O. 5

i
u

o~

~

100°C

~

~

100°C

~

1
0.5

0.2
0.1
0.05
0.01

f

~~~~ ~~L~~~i;E~~~~gN~~~~~ ~~~~!~~~~~~;H~~~
SAME CURVES IF ViliS SUFFICIENTLY BELOW RATEO VR

5

II

:i!

'THE CURVES SHOWN ARE TVPICAl FOR THE HIGHEST VOLTAGE

/25°C

V !)
I' I /
/ v /

1

l-

/ /

175°'1 /

TJ ~

1

/

o

/ I

~

/ I

;:::
:z
;:::

400
600
VR, REVERSE VOLTAGE (VOLTS)

I

RATED VR

.!:f.

ROJA.~ 50°CIW

0.07
0.0 5

I

- -.. ..........
..............

II /
I I
I I I

0.02

0.0

I

I I I

. 0.03

1
0.3

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

SQUARE
I- WAVE

o

o

2.3

50

vF, INSTANTANEOUS VOLTAGE IVOLTS)

Figure 1. Typical Forward Voltage

(CAPACITIVE LOAD)
TJ - lJ50C

10

V

1/

//

V
/ / V V
Y /.. ~ V
/

1#V

V

Y
/~'<-<.~~
,/ o,r:;'P de
,/" /

f/

10

9

~ ~
~
:z

,,/

~

~

1

2

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 4. Power Dissipation

4-28

...........

I'--..
.............

2"-

~

100
150
TA, AMBIENT TEMPERATURE

6

\

TJ

"-

r-...

u

1.5

"de

200

250

0

V

~~
0.5

f---

Figure 3. Current Derating
(Mounting Method #3 Per Note 1)

/

J

IpK/IAV ~ 20 /

~ V,.,& V

1000

5

// /

'"~ o. 1

800

Figure 2. Typical Reverse Current*

/ /

'" o. 2
:'il
:z
::>

200

II

2.5

10

"- r--..

~I 25°C

--- --

20
30
VR, REVERSE VOLTAGE (VOLTS)

40

Figure 5. Typical Capacitance

Rectifier Device Data

50

MUR190E, MUR1100E

BVOUT

,..----+-----0 Vo
10

MERCURY
SWITCH

S,

Figure 6. Test Circuit

Figure 7. Current-VOltage Waveforms

The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche capability ofthe new "E" series Ultrafast rectifiers.
A mercury switch was used instead of an electronic
switch to simulate a noisy environment when the switch
was being opened.
When S1 is closed at to the current in the inductor IL
ramps up linearly; and energy is stored in the coil. At t1
the switch is opened and the voltage across the diode
under test begins to rise rapidly, due to dildt effects, when
this induced voltage reaches the breakdown voltage of
the diode, it is clamped at BVDUT and the diode begins
to conduct the full load current which now starts to decay
linearly through the diode, and goes to zero at t2.
By solving the loop equation at the point in time when
Sl is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy
transferred is equal to the energy stored in the inductor
plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus

any losses due to finite component resistances. Assuming the component resistive elements are small Equation
(1) approximates the total energy transferred to the
diode. It can be seen from this equation that if the VDD
voltage is low compared to the breakdown voltage of the
device, the amount of energy contributed by the supply
during breakdown is small and the total energy can be
assumed to be nearly equal to the energy stored in the
coil during the time when S1 was closed, Equation (2).
The oscilloscope picture in Figure 8, shows the information obtained forthe MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown
voltage of 1300 volts, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new "E" series provides added protection
against those unforeseen transient viruses that can
produce unexplained random failures in unfriendly
environments.

EQUATIQN (1):

W

CHANNEL 2:

- ~ U2
(
BVDUT
)
AVAL - 2 LPK ,BVDUT - VDD

IL
0.5 AMPS/OIV.

EQUATION (2):

WAVAL =

1

CHANNEL 1:

2

2: U LPK

VOUT
500 VOLTS/DiV.

TIME BASE:
20/LsIDIV.

Figure 8. Current-Voltage Waveforms

Rectifier Device Data

4--29

MUR190E, MUR1100E

Note 1. Ambient Mounting Data

Data shown for thermal resistance junction-toambient IROJA) for the mountings shown is to be used
as typical guideline values for preliminary engineering
or in case the tie point temperature cannot be measured.

TYPICAL VALUES FOR R6JA IN STILL AIR
LEAD LENGTH, L

MOUNTING
METHOD

1

2

ROJA

1/8

1/4

1/2

UNITS

52

65

72

"eiW

67

80

87

"eiW

3

50

"eiW

MOUNTING METHOD 1

MOUNTING METHOD 2

~
VECTOR PIN MOUNTING

MOUNTING METHOD 3

r

L=3/8"

IeJllq
BOARD GROUND
PLANE
P.C. BOARD WITH
1·1/2" x 1·1/2" COPPER SURFACE

4--30

Rectifier Device Data

MOTOROLA

-

MUR420
MUR460

SEMICONDUCTOR

TECHNICAL DATA

•

•

•

MUR420 and MUR460
are Motorola Preferred Devices

Switch mode Power Rectifiers
· .. designed for use in switching power supplies, inverters and as free wheeling diodes,
these state-of-the-art devices have the following features:
•
•
•
•
•
•

ULTRAFAST
RECTIFIERS

Ultrafast 25, 50 and 75 Nanosecond Recovery Times
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to SOD Volts

4.0 AMPERES
200-600 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for
10 Seconds, 1/1S" from case
• Shipped in plastic bags, 5,000 per bag.
• Available Tape and Reeled, 1500 per reel, by adding a "RL" suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: U420, U4S0

•

CASE 267-03
PLASTIC

MAXIMUM RATINGS
MUR
Symbol

420

460

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

200

SOD

Volts

Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 1)

IF(AV)

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)

IFSM

Operating Junction Temperature and
Storage Temperature

4.0 @ TA

=80°C

4.0 @ TA

125

=40°C

70

-65 to +175

TJ, Tstg

Amps

Amps

°C

THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Ambient

See Note 1

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 3.0 Amp, T J = 150°C)
(iF = 3.0 Amp, T J = 25°C)
(iF = 4.0 Amp, TJ = 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage, TJ = 150°C)
(Rated de Voltage, TJ = 25°C)

iR

Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/fls)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)

trr

Maximum Forward Recovery Time
(IF = 1.0 A, dVdt = 100 A/fls, Recovery to 1.0 V)

tfr

Volts
0.710
0.875
0.890

1.05
1.25
1.28

150
5.0

250
10

35
25

75
50

25

50

IIA

ns

ns

(1) Pulse Test: Pulse Width = 300 flS, Duty Cycle,; 2.0%
Rev 3

Rectifier Device Data

4-31

I

MUR420, MUR460

MUR420 - - - - - - - - - - - - - - - - -

FIGURE 1 - TYPICAL FORWARD VOLTAGE

FIGURE 2 - TYPICAL REVERSE CURRENT'

100
80

40
20
S.O

70
50
30

(/

/; r;

10
7.0

0.04

f£i

~ 3.0

a

~ 2.0

/

~

TJ

!!l

= 175"C_

//
I

@ 1.0

0.5

ac 6.0

I
II

f2

J /

O. 1
0.2

0.3

0.4

...........

~

/ I I

$

0.5 0.6 0.7
O.S 0.9
1.0
YF.INSTANTANEOUS VOLTAGE (VOLTS)

~
!i

o

9.0
S.O f--(CapaeitiY. Loads)

e

=

7.0

!!,

~ 6.0

i

~

/

1.1

0

1.2

o

50

4.0

~

~ 1.0
~ 0

/

/'
/ / /' A
/ v/ # ~

5.0

3.0
~ 2.0

/

//.

/

V ....

~ Vde
/

4-32

1\

...-~

!'

5 50

Square Way.

4.0
5.0
6.0
7.0
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

100

70
l;;; 60

~

~

V~ ~
~~
o
1.0
2.0
3.0

'" "

100
150
TA. AMBIENT TEMPERATURE

200

250

FIGURE 5 - TYPICAL CAPACITANCE

J

/

200

200

2~ I--l~ r;Y V
r---

J

180

C"--.
. . . . . t'-..

~ 2.0

FIGURE 4 - POWER DISSIPATION

S

160

de
Squ.,"" ~
Wry·
~

4.0

~

I

10

60
80
100 120 140
VR. REVERSE VOLTAGE (VOLTSI

l'-.

~

a:

I I

=

Rated VR
R8JA = 2S"CIW- I--

g§

0.2

_

40

8.0

:5

0.3

25"C=

10

if
::i!
;:::

loJC

0.7

.~

=

FIGURE 3 - CURRENT DERATING
(MOUNTING METHOD #3 PER NOTE 1)

r

~

loo"C=

0.004
0.002

I-- 25"C

L

175"C-

0.02

.st. O.OOS

/ / I
/ I

!Z

i

0.08

w

20

~ 5.0

::i!
!Z

~

I

if

•

i:~

~ ~::
a 0.2

/; '/

20

1

TJ

T~ = 25!C

,

r....
J'..,.

40

r--

-

c.i 30

20

S.O

o

10

20
30
VR. REVERSE VOLTAGE (VOLTS)

40

50

Rectifier Device Data

MUR420, MUR460

MUR460 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -

FIGURE 7 - TYPICAL REVERSE CURRENT*

FIGURE 6 - TYPICAL FORWARD VOLTAGE
20

V/

/; 1/

10

1

i

7.0

I

S.O
3.0
TJ = 175'C

~

2.0

:.;

~

~
~

Z

ll! 1.0

'"

100'1:=

0,90

0.40

25'C=
.,/

• OOB
E' 0.04
0.02
O.OOB
0.004

/

o

-

0.7

'"

O.S

~
~

I

::::>

S

0.3

z

0.2

~
~

I

II

~

~
!Z
~
::::>

I I

0.3

~

I I
0.5

~

0.7

0.9
1.1
1.3
loS
1.7
1.9
VF, INSTANTANEOUS VOLTAGE (VOLTSI

1.1

r---- ~

Squar..... ~
fave

2.0

~

$

r--..

r---

4.0

~

I I

0.02

B.O

'"~
'"f2

I II

0.03

Rated VR
R(lJA = 2ff'CIW

:; 6.0

0.07
O.OS

~

0

o

2.3

50

f'..

100
1S0
TA, AMBIENT TEMPERATURE ('CI

200

250

FIGURE 10 - TYPICAL CAPACITANCE

FIGURE 9 - POWER DISSIPAnON
40
30

1\\.

~'2D

"-

~

z
j!

:: 10

13

u B.O
7.0
6.0
S.O
4.0

TJ = 2S'C

"""'"

<3

Rectifier Device Data

•

~

II

0.1

BOO

10

1/ I

.!f-

600

FIGURE 8 - CURRENT DERATING
(MOUNTING METHOD #3 PER NOTE 11

I If I

U)

-

200
300
400
500
VR, REVERSE VOLTAGE VOLTS

100

::::>
u

c

175'C

TJ

i--

~ 0.20

//

I-

-

--

::~2.0

::::>

1/ I II
/ ~ 2S'C
IL I
100"C

/

::E

400
100
BO
40
20

o

10

,......,

20
30
VR, REVERSE VOLTAGE (VOLTSI

40

50

4--33

MUR420, MUR460

NOTE 1 - AMBIENT MOUNTING DATA

Data shown for thermal resistance junction-toambient (R8JA) for the mountings shown is to be used
as typical guideline values for preliminary engineering
or in case the tie point temperature cannot be measured.

TYPICAL VALUES FOR RBJA IN STILL AIR
LEAD LENGTH. L (IN)

MOUNTING
METHOD

RR8JA

•

1/8

1/4

1/2

3/4

50
58

51
69

53
61

55
63

28

UNITS

.C/W
·C/W
·C/W

MOUNTING METHOD 1
P.C. Board Where Available Copper
Surface area is small.

MOUNTING METHOD 2
Vector Push-In Terminals T-28

MOUNTING METHOD 3
P.C. Board with
1-1/2" x '-1/2" Copper Surface

t k L = 1/2"

~ Jlle;!:
Board Ground Plane

4-34

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MUR490E
MUR4100E

Switchmode Power Rectifiers
Ultrafast "E" Series
w/High Reverse Energy Capability

MUR4100E is a
Motorola Preferred Device

· .. designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

ULTRAFAST
RECTIFIERS
4.0 AMPERES
900-1000 VOLTS

20 mJ Avalanche Energy Guaranteed
Excell~nt Protection Against Voltage Transients in Switching Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Low Forward Voltage
Low Leakage Current
Ol--_~If---"'O
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 Volts

a

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for
10 Seconds, 1/16" from case
• Shipped in plastic bags, 5,000 per bag.
• Available Tape and Reeled, 1500 per reel, by adding a "RL" suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: U490E, U4100E
MAXIMUM RATINGS
Symbol

MUR490E

MUR4100E

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

900

1000

Volts

Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 1)

IF(AV)

4.0 @ TA = 35°C

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

70

Amps

TJ, TstQ

-65 to +175

°C

Operating Junction Temperature and Storage Temperature

THERMAL CHARACTERISTICS
Maximum Thermal Resistance. Junction to Case

See Note 1

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(IF = 3.0 Amps, TJ = 150°C)
(IF = 3.0 Amps, TJ = 25°C)
(IF = 4.0 Amps, TJ = 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 100°C)
(Rated dc Voltage, T J = 25°C)

iR

Maximum Reverse Recovery TIme
(IF = 1.0 Amp, di/dt = 50 Amp/l"')
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)

trr

Maximum Forward Recovery TIme
(IF = 1.0 Amp, di/dt = 100 Amp/l"', Recovery to 1.0 V)

tfr

75

ns

WAVAL

20

mJ

Controlled Avalanche Energy (See Test Circuit in Figure 6)

Volts
1.53
1.75
1.85

JlA
900
25
ns
100
75

(1) Pulse Test: Pulse Width = 300 l"', Duty Cycle :>2.0%
Rev 2

Rectifier Device Data

4-35

MUR490E, MUR4100E

ELECTRICAL CHARACTERISTICS
20

It/' ..A

TJ = moe
10

25°e

~ f7 100 e
0

1
a

I

I II

•

g;

~
~'"

1000 e

1
25°e

~ ~:~

/ I
/ /
II

~
!z

~O,04

- 0.02
O.OOS
0.004
0.002
0.00 10

'The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse amen~::
forlowervoltagesele<:lionscanbeestimaledfromthese_

same curves if VR is sufficiently below rated VR.

100

0.7

f2

'"5l

0.3

:i:

0.2

300 400 500 600 700
VR. REVERSE VOLTAGE (VOLTS)

I II

900

-

1000

10

I
I
I I

Rated VR
ROJA = 2Socm

I

t;;
~

.!:f.
0.1

-

0.07

.......

0.05

r--...
r-....... i'-....

0.03

Squ,;;e-...
Wjve

0.02

SOD

I I

::::l

z
;5

200

Figure 2. Typical Reverse Current*

1/

0.5

175°C

10

~ 0.4

II
~

TJ

1~

I

I

1000
400
200
100

-

o

0.4

0.2

I

.......

O.S
1.0
1.2
1.4
1.6
0.6
vF. INSTANTANEOUS VOLTAGE (VOLTS)

50

I.S

TJ

~

250

11

o\
5

7

6

"o~
/ ' ~~
/. V / .....-I-'dc

TJ = 25°e
0\

\

10

(CapaCilive) ~ = 20
Load
IAV./ :......-:::

0

V V V

/~~ V

..&~~

~~~

2
3
IF(AV). AVERAGE FORWARD CURRENT

Figure 4. Power Dissipation

4-36

200

50

175°C

8

2

~

70
60

0

5
4_
3

"

100
150
TA. AMBIENT TEMPERATURE

Figure 3. Current Derating
(Mounting Method #3 Per Note

Figure 1. Typical Forward Voltage

9

dc

:--.......

0
9
8
7

"10

. . . . r--....

1--1-.

"""'

20
30
VR. REVERSE VOLTAGE (VOLTS)

40

Figure 5. Typical Capacitance

Rectifier Device Data

50

MUR490E, MUR4100E

BVDUT

r---+-----Q

VD

ID
MERCURY
SWITCH

S1

DUT

Figure 6. Test Circuit

Figure 7. Current-Voltage Waveforms

The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche capability ofthe new "E" series Ultrafast rectifiers.
A mercury switch was used instead of an electronic
switch to simulate a noisy environment when the switch
was being opened.
When Sl is closed at to the current in the inductor IL
ramps up linearly; and energy is stored in the coil. At tl
the switch is opened and the voltage across the diode
under test begins to rise rapidly, due to di/dt effects, when
this induced voltage reaches the breakdown voltage of
the diode, it is clamped at BVDUT and the diode begins
to conduct the full load current which now starts to decay
linearly through the diode, and goes to zero at t2'
By solving the loop equation at the point in time when
Sl is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy
transferred is equal to the energy stored in the inductor
plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from tl to t2) minus

any losses due to finite component resistances. Assuming the component resistive elements are small Equation
(1) approximates the total energy transferred to the
diode. It can be seen from this equation that if the VDD
voltage is low compared to the breakdown voltage of the
device, the amount of energy contributed by the supply
during breakdown is small and the total energy can be
assumed to be nearly equal to the energy stored in the
coil during the time when Sl was closed, Equation (2).
The oscilloscope picture in Figure 8, shows the information obtained for the MUR81 OOE (similar die construction as the MUR4100E Series) in this test circuit conducting a peak current of one ampere at a breakdown
voltage of 1300 volts, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new "E" series provides added protection against those unforeseen transient viruses that can
produce unexplained random failures in unfriendly
environments.

EQUATION (1):

W

AVAL =

1~

2"

LPK

CHANNEL 2:

(

~DUT

BVDUT - VDD

IL
0.5 AMPS/DIV.

)

EQUATION (2):

WAVAL =

1

CHANNEL 1:

2

2" Ll LPK

VDUT
500 VOLTs/DIV.

TIME BASE:
20ILS/DIV.

Figure 8. Current-Voltage Waveforms

Rectifier Device Data

4-37

•

MUR490E, MUR4100E

Note 1 - Ambient Mounting Data

Data shown for thermal resistance junction-toambient (R6JA) for the mountings shown is to be used
as typical guideline values for preliminary engineering
or in case the tie point temperature cannot be measured.

TYPICAL VALUES FOR R/lJA IN STILL AIR
MOUNTING
METHOD

rn

•

R6JA

LEAD LENGTH, L (IN)

118

1/4

1/2

3/4

UNITS

50
58

51
59

53
61

55
63

°C/W
°CM!
°CM!

28

MOUNTING METHOD 1
P.C. Board Where Available Copper
Surface area is small.

MOUNTING METHOD 2
Vector Push-In Terminals T-28

MOUNTING METHOD 3
P.C. Board with
1-1/2" x 1-1/2" Copper Surface

~L=1/2"

~]q:
Board Ground Plane

4-38

Rectifier Device Data

MOTOROLA

-

•

MUR620CT

SEMICONDUCTOR

TECHNICAL DATA

Motorola Preferred Device

Switchmode Power Rectifiers
· .. designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following features:

ULTRAFAST
RECTIFIERS

• Ultrafast 35 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO-220 Package

6 AMPERES
200 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: U620

4

1
2
3

CASE 221A-06
TO-220AB
PLASTIC

MAXIMUM RATINGS
Symbol

Value

Unit

VRRM
VRWM
VR

200

Volts

IF(AV)

3.0
6.0

Amps

Peak Repetitive Forward Current Per Diode Leg
(Rated VR' Square Wave, 20 kHz) TC = 130°C

IFRM

6.0

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave,
Single phase, 60 Hz)

IFSM

75

Amps

TJ, Tstg

-65 to +175

°C

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Voltage
(Rated V R) T C = 130°C

Per Diode
Total Device

Operating Junction Temperature and Storage Temperature

THERMAL CHARACTERISTICS PER DIODE LEG
Rating
Thermal ReSistance, Junction to Case

Typical

Maximum

5.0-6.0

7.0

0.80
0.94

0.895
0.975

2'(HO

O.OHlO

250
5.0

20-30

35

ELECTRICAL CHARACTERISTICS PER DIODE LEG
Instantaneous Forward Voltage (1)
(iF =3.0Amp, TC = 150°C
(iF = 3.0 Amp, T C = 25°C)

vF

Instantaneous Reverse Current (1)
(Rated de Voltage, TC = 150°C)
(Rated de Voltage, T C = 25°C)

iR

Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/l's)

trr

Volts

IIA

ns

(1) Pulse Test: Pulse Width = 300 llS, Duty Cycle,; 2.0%.

Rev 1

Rectifier Device Data

4---39

a

MUR620CT

FIGURE 1 - TYPICAL FORWARD VOLTAGE

FIGURE 2 - TYPICAL REVERSE CURRENT

~ 10
~ 7.0
~ 5.0

100
40
20
[//

§ 3.0

u
~

~

~

~
S

:z

1//1/

2.0

1 4.02.0

/

/

15O"C

~ 1.0
§ 0.4
~ 0.2
0.1
G; 0.04

/

0.7
0.5

TJ = 175'C

t; 0.2
~

.!f. 0.1

0.2

II I

I

I

l00'C
150'C-r-/
0.4
0.6

1.0

0.004
0.002
0.00 1 0

1.2

t..-W

40

~ 7.0

.Rated YR Applied

::;;

7.0

~

I-

:z

~

:; 5.0
4.0

~

r-.,de

~

Square Wave

III 3.0

~

;;

11.0

4.0

~

~

140
TC. CASE TEMPERATURE I'C)

160

W

~

"-

'\. de

Square Wave I"-

"-

2.0 f- Square Ware

~

I

0
W

180

40

'\.

"

'-

I

de
3.0 ~~-......... '_1"' ..........

... ....... ...
... .......

- -R9JA = OO'CW
;; 1.0 I--- -ifree air. no heat sink)

r\.
120

lE
III

"~

100

5.0

~~

~

~ 2.0

o

g§

:::>
u

~

~

+-R9JA = 16"CW with
• typical TO·220 he.•t sink -

I

6.0

!Z

~ 6.0

00
~
m m ~
YR. REVERSE VOLTAGE (VOLTS)

FIGURE 4 - TOTAL DEVICE CURRENT DERATING. AMBIENT

FIGURE 3 - TOTAL DEVICE CURRENT DERATING. CASE

:::>

7

~

25'C

.!i!=0.D1

0.8

~ 8.0
::;;

~'"

-

~

./

": 0.02

/25'C

vF. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

•

v

100"C

ffi

~ 0.3

~

175'C

I-

/

1.0

TJ

to

/

1/

.'\.

'\..
:\.

...

"\.'\.

...

~

~

.... \.

.. :r,.

00
~
~
m ~
TA. AMBIENT TEMPERATURE I'C)

~

W

~

FIGURE 5 - POWER DISSIPATION

I:::

Square Wave/

~ 60

/

~ 5.0

ffi 4.0

~

»

~ 3.0

~

ffi 2.0
~

It: 0

4-40

/de

7/ V
//V

if

~
;; 1.0

./V /"

V

/.v , /

,/

~V
1.0

2.0
3.0
4.0
5.0
6.0
IFIAV). AYG FORWARD CURRENT lAMPS)

7.0

8.0

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

Switchmode
Power Rectifiers

MURH840CT
Motorola Preferred Device

· .. designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

ULTRAFAST RECTIFIER
8.0 AMPERES
400 VOLTS

Ultrafast 28 Nanosecond Recovery TImes
175°C Operating Junction Temperature
Popular TO-220 Package
Epoxy Meets UL94, Vo @ 1/8"
High Temperature Glass Passivated Junction
High Voltage Capability to 400 Volts
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures

4

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: UH840

•

CASE 221A-06
TO-220AB

MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device. (Rated VR). TC = 120°C
Peak Repetitive Forward Current
(Rated VR. Square Wave. 20 kHz). TC

Per Leg
Total Device
Per Diode Leg

= 120°C

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave. single phase. 60 Hz)

Symbol

Value

Unit

VRRM
VRWM
VR

400

Volts

IF(AV)

4.0
8.0

Amps

IFM

16

Amps

IFSM

100

Amps

Controlled Avalanche Energy

WAVAL

20

mJ

Operating Junction Temperature and Storage Temperature

TJ. Tstg

-65 to + 175

°c

THERMAL CHARACTERISTICS. PER DIODE LEG
Maximum Thermal Resistance. Junction to Case

ELECTRICAL CHARACTERISTICS. PER DIODE LEG
Maximum Instantaneous Forward Voltage (1)
(IF = 4.0 Amps. TC = 150°C)
(IF = 4.0 Amps. TC = 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage. TC = 150°C)
(Rated dc Voltage. TC = 25°C)

iR

Maximum Reverse Recovery Time
(IF = 1.0 Amp. dildt = 50 Ampslp.s)

trr

(1, Pulse Test: Pulse W,dth

Volts

1.9
2.2

p.A
500
10
28

ns

= 300 p.s. Duty Cycle" 2.0%.

Rev 1

Rectifier Device Data

4-41

MURH840CT

1000
500
150°C !-------

200

'i 100

0

;:: 50

0

150Y

0

0

/.
V

V-/'

/i00~

ia
w

'"
'"

~

~

15°C

100°C

F==

15°C

F=-

20
10

1
0.5
0.2

/

/

/

0. 1 0

V

5

J

/ /

•

/

1

/ /

6

.5

4

o.1

0.4

Li

r--

0.8

1.1

1.4

1.6

18

1.1

0

20

a:

~

f'....
f'....

~

<.:J

z
;5

"

~

<'i
<5

'-':
110

120

130
140
150
160
TC. CASE TEMPERATURE (OCI

"\

170

Figure 4. Current Derating, Case, Per Leg

4-42

100

120

140

"'

160

180

200

fll

1l_ _

100
t'j
E,

.!£-

o

80

• •

~

;2

~

60

1000~.mlln

"DC

SQUA;;-r
WAVE

~

40

Figure 3. Forward Current Derating, Ambient, Per Leg

I"

t'--

~
'"
C

;:-...

TA. AMBIENT TEMPERATURE eCI

RATED VR APPLIED

i"'--

en

, .......

",

0

2.4

10
~

""

t--.,

1

Figure 1. Typical Forward Voltage

z

""de

SOUA\;E'
WAVE

VF.INSTANTANEOUS VOLTAGE (VOLTSI

S

...... "

2

I /
0.6

-

3

/11 /

II /

400

7

5

.1

150 200 250 300 350
VR. REVERSE VOLTAGE (VOLTSI

Figure 2. Typical Reverse Current, Per Leg

.7

/

100

/

II

/

1

/

50

/

/

0111_ __
1~~~~~~~WW~-L~-U~~~~~~

180

0.01

0.1

1
10
VR. REVERSE VOLTAGE (VOLTSI

100

Figure 5. Typical Capacitance, Per Leg

Rectifier Device Data

MURH840CT

SI
~

z
o

~

0

/

8

SQUARE WAVE/

16

/

14

VDC

V V

~ 12

o

/ 17

~ 10
~ 8

/ !/'"

/' V

w

~
~

/

6

4

~2 . /

b V

/. V

2
4
5
6
7
8
IFIAV). AVERAGE FORWARD CURRENT lAMPS)

10

Figure 6. Forward Power Dissipation, Per Leg

a

Rectifier Device Data

4-43

I

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MURH860CT

Designer'sTM Data Sheet
Switchmode™
Power Rectifiers

Motorola Preferred Device

· .. designed for use in switching power supplies, inverters and as free wheeling diodes,
these state-of-the-art devices have the following features:

•

• Ultrafast 35 Nanosecond Recovery limes
• 175°C Operating Junction Temperature
• Popular TO-220 Package
• Epoxy Meets UL94, Vo @ 1/8"
• High Temperature Glass Passivated Junction
• High Voltage Capability to 600 Volts
• Low Leakage Specified @ 150°C Case Temperature
• Current Derating @ Both Case and Ambient Temperatures
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: UH860

ULTRAFAST RECTIFIER
8.0 AMPERES
600 VOLTS

CASE 221A-06
TO-220AB

MAXIMUM RATINGS, PER LEG
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated VR), T C = 120°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz). TC = 120°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave. single phase. 60 Hz)
Operating Junction Temperature and Storage Temperature

Symbol

Value

Unit

VRRM
VRWM
VR

600

Volts

IF(AV)

4.0
8.0

Amps

IFM

16

Amps

IFSM

100

Amps

TJ, Tsta

-65 to +175

°C

RaJC

3.0

Total Device

THERMAL CHARACTERISTICS, PER LEG

I Maximum Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS, PER LEG
Maximum Instantaneous Forward Voltage (1)
(iF 4.0 Amps, TC 150°C)
(iF 4.0 Amps, TC 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage, T C 150°C)
(Rated de Voltage, T C 25°C)

iR

Maximum Reverse Recovery TIme
(IF 1.0 Amp, di/dt 50 Amps/fls)

trr

=
=

=
=

=
=

=

=

Volts
2.5
2.8
flA
500
10
35

ns

(1) Pulse Test. Pulse Width = 300 IlS, Duty Cycle s 2.0%.

Designer's Data for "Worst Case" Conditions - The DeSigner's Data Sheet permits the deSign of most cirCUits entirely from the information presented. SOA Limit curves - representing
boundanes on device characteristiCS - are given to facilitate "Worst case" deSign.

Preferred deVIces are Motorola recommended choices for future use and best overall value.

Rev 1

4-44

Rectifier Device Data

MURH860CT

en
0-

!

iii
II:
II:

50

A""

I

20

.A"

TJ.150'~ ~85°y

10

./

25'C~

G 7
o

!

--

100

~

/

Cl. .J~

./ ./

w

36

0

z

32

~

28

(f)

24

~
0w

~
II:

25'C~

0,5

0,2
0,1
"'. 0,05

a:;

I

II:

0,5

0,02
0,01 0

11.522,533,544,5
vF, INSTANTANEOUS VOLTAGE (VOLTS)

50 100

200
300
400
500
VR, REVERSE VOLTAGE (VOLTS)

600

Figure 2. Typical Reverse Leakage Current, Per Leg

40

S
~
is
w

100'C

15

Figure 1. Typical Forward Voltage, Per Leg

II:

5

II:

/./

1
@ 0.7
z 0,5
~ 0.3
;5 0,2
en
~
Ii. 0,1 0

en

G

15O'C ~

W

en

en

ll!

!z

~

5

50
20
10

RATED VOLTAGE APPLIED RSJC·3'CIW
-

TJ.150'C

SQUARE
WAVE

20
16

V

.,;/

12

V

w

:;:

!

~

u.

0-

1

.,;"
./

V

V
V

V

........ r-..,

~

1/

SQUARE

DC

~l-

[.,.0 .........

Qrr

--

U
28..s
w
Cl

1---

24
20

II:

",/"

~
0

12
-

~
fa

,0

16

-

ffi

>

Vr ·30V
dudt.50NIlS

0
0

w

.,

II:

0

3
4
5
6
7
IF(AV), AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Typical Recovery Characteristics

Rectifier Device Data

DC

0-

"-180

160

Figure 4. Typical Current Derating, Case, Per Leg

32

32

... ~

"-"."\

80
100
120
140
TC, CASE TEMPERATURE ('C)

60

Figure 3. Typical Forward Dissipation, Per Leg

Trr

r-....

'~

2
4
5
6
IF(AV), AVERAGE FORWARD CURRENT (AMPS)

f..--

t--.. ".....,

V

k::: r- ....-

" "-

.......

8

0

140
130
120
110
~ 100
w 90
0
Z
80
;5 70
U
~ 60
« 50
0
<5 40
30
20
10
0
0,1

r-..,

r-.
r-...

-

100

1
10
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Typical Capacitance, Per Leg

4-45

-

MUR1620CT
MURl640CT
MUR1660CT

MOTOROLA

SEMICONDUCTOR

TECHNICAL DATA

•

Motorola Preferred Davie..

Switchmode Power Rectifiers

ULTRAFAST
RECTIFIERS

· .. designed for use in switching power supplies, inverters and as free wheeling diodes,
these state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

II

Ultrafast 35 and 60 Nanosecond Recovery TImes
175°C Operating Junction Temperature
Popular TO-220 Package
Epoxy Meets UL94, Vo @ 1/8"
High Temperature Glass Passivated Junction
High Voltage Capability to 600 Volts
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures

8 AMPERES
20D-40()-600 VOLTS

Mechanical Characteristics:
• Case; Epoxy, Molded
• Weight 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260'C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: U1620, U1640, U1660

4

CASE 221 A-Il6
To-220AB

MAXIMUM RATINGS
MUR
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated VR), T C = 150°C
Peak Rectified Forward Current
(Rated VR, Square Wave, 20 kHz), T C = 150°C

Per Leg
Total Device
Per Diode Leg

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions haltwave,
single phase, 60 Hz)
Operating Junction Temperature and
Storage Temperature

Symbol

162DCT

164DCT

1660CT

Unit

VRRM
VRWM
VR

200

400

600

Volts

IF(AV)

8.0
16

Amps

IFM

16

Amps

IFSM

100

Amps

TJ' Tstg

-65 to +175

'c

THERMAL CHARACTERISTICS, PER DIODE LEG
Maximum Thermal Resistance, Junction to Case

2.0

ELECTRICAL CHARACTERISTICS, PER DIODE LEG
Maximum Instantaneous Forward Voltage (1)
(iF 8.DAmp, TC 150'C)
(iF 8.0 Amp, T C 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, T C 150°C)
(Rated dc Voltage, T C 25°C)

iR

Maximum Reverse Recovery TIme
(IF 1.0 Amp, dildt 50 Ampl~)
(IF 0.5 Amp, iR 1.0 Amp, IREC

trr

=
=

=
=

=
=

=
=

=

=

=0.25 Amp)

0.895
0.975

1.00
1.30

I

Volts
1.20
1.50

I1A
250
5.0

500
10

35
25

60
50

ns

(1) Pulse Test Pulse Width = 300 ~, Duty Cycle,; 2.0%
Rav2

4-46

Rectifier Device Data

MUR1620CT, MUR1640CT, MUR1660CT

- - - - - - - - - - - - - - - - - MUR1620CT - - - - - - - - - - - - - - - - -

FIGURE 1 - TYPICAL FORWARD VOLTAGE, PER LEG

FIGURE 2 - TYPICAL REVERSE CURRENT, PER LEG-

100
'The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
lor lower voltage selections can be estimated from
these same curves il VR is sufficiently below rated VR.

70
1.0K
400
200
100
tZ
40
g§ 20
=>
10
u
~ 4.0
~ 2.0
1.0
a::
.!i: 0.4
0.2
0.1
0.04
0.02
0.01

50

30
20

~
::;;

~

t-

ifi
g§
=>
u

/

7.0
I

5.0

~a::

3.0

en
=>

2.0

@
z

;!:
z
;!:
en
~

.!f-

/

/ / /

10

/

Q

f2

1

V/ V
V/ '/

/

/

II

/ II

o

I

I I
TJ=175'C /

~

/100'C / 25'C

~

B.O
7.0

!!I

6.0
5.0

~
in

I

Q

I

a::

I

I
0.2

~
w

'"~

I

~
~

I I

/
0.4

0.6

O.B

14

...
~

13
Q

~
~

10

1.0

1

1.2

B.O

"' ~

}

"-

"

2.0

-

-

de

Squat" Wav~ - -

:-....

o

20

40

.........

~

2.0

1.0
140

160
150
TC. CASE TEMPERATURE (OC)

~
z

B.O

<[

7.0

c
;:::

~

160

lBO 200

170

"

lBO

Square Wave

/'

5.0

...

4.0

:'"

3.0

V
,/

6.0

~ 1.0
~ 0

~

~

TJ = 175'C

V

./

V L

v...-

de

,/

/ ........ V

./~

~ 2.0

~

~

"\.

Vi 10
9.0

w

"-

60
BO 100 120 140
TA. AMBIENT TEMPERATURE (OC)

Rectifier Device Data

200

""-" ,,,-

t:

~c

I

0

lBO

FIGURE 5 - POWER DISSIPATION, PER LEG

c

-- -- --- " "
-- .... .... .

f'...

6.0

160

Square Wave

3.0

~

1li
!!I

-Squar"W~ f'...

w

~

-

-

~ 4.0

!

RaJA ,6 o C}W- ---RaJA = 60 o C/W(No Heatsink)
- -

........

=

60
BO
100 120 140
VR, REVERSE VOLTAGE (VOLTS)

" ""

FIGURE 4 - CURRENT DERATING, AMBIENT, PER LEG

~ 12
~

:.-

~c

VF,INSTANTANEOUS VOLTAGE (VOLTS)

Vi

25'C

./

./

Rated VR Applied

~ 4.0

I I

/

0.2

I-'

9.0

Q

z

0.3

40

",

100'C

10

1.0

0.5

20

-

175'C

FIGURE 3 - CURRENT DERATING CASE, PER LEG

I

0.7

0.1

r= r=TJ

...:::: ~
....... 1"""

o

1.0

2.0 3.0 4.0
5.0 6.0 7.0 B.O
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

9.0

10

4-47

•

MUR1620CT, MUR1640CT, MUR1660CT

MUR1640CT - - - . . . , - - - - - - - - - -_ __
RGURE 7 - TYPICAL REVERSE CURRENT, PER LEG·

RGURE 8...,. TYPICAL FORWARD VOLTAGE, PER LEG
100

'The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voUage selections can be estimated from
these curves if VR is sufficiently below rated VR.

70
1.0K
400

50

.,

30
20

ie

/

~

10

~
a:

7.0

I-

:::>
u
c

~

12

'";;:;

1.0

.~

/

!Z
~

/'

a

/'

V

V/

TJ=175°r;

/

15CY'C-

20
10

l00"C_

~ 4.0

~ ~:~

/V

-=-

0.04

/

0.02

um

o

50

100

10CY'C/25°C

V

~

"'~"

9.0

I

I

0.2

0.4

!...

/

/ If

"'" ,,,-

~

~

Square Wave

3.0

~

0.8

1.0

1.2

1.4

~
F

1.6

140

150
160
TC. CASE TEMPERATURE (OC)

vF. INSTANTANEOUS VOLTAGE (VOLTS)

FIGURE 9 - CURRENT DERATING. AMBIENT, PER LEG
I

----

2

RO~A l~CIW

=
ROJA = sooCIW
(No Heat Sink)

01== :::;:- de
0

1"--.

:---...

t-- -S~
Ot-- - Wave
O~

r-.....

:---...
...........

::-::-dc

-

.,--

01--- r-Square
t---- c-- Wave
0
W 40

60

-60

~

I

W

~

-- ....,.,.
~

~

9. 0

8. 0

~

~

7. 0
6. 0

E:]

5.0

o

~
~
~

"'

180

~

/
TJ = 175°C

V
Square
wave;?

/' "/

4. 0
3.0

2.0

~ 1.

-

~

170

0

~

~

.' 0-

-- --

~

RGURE 10 - POWER DISSIPATION, PER LEG

~

...........

......

TA. AMBIENT TEMPERATURE (OC)

4-48

'"

""" """," 0-.

4.0

2.0
• 1.0

0.6

500

~c

6.0
is 5.0

/I /

0.1

450

Rated VR Applied

8.0

~~

I

400

RGURE 8 - CURRENT DERATING, CASE:PER LEG

0.7

0.3

150 200 250 300 350
VR. REVERSE VOLTAGE (VOLTS)

-

10

z
<> 7.0

0.5

25"C

../

-

J5. 0.4

/

/ II

TJ-175"C

40

0.2
0.1

/

3.0
2.0

/

1 ~~

./

/

5.0

'"
:::>
~
>!:
z
>!:

V

V
1/ /'

=

./

/

/
/

/'

~~

./

./ /

~

~.P1.0......

:;:..---

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Rectifier Device Data

10

MUR1620CT, MUR1640CT, MUR1660CT

MUR1660CT - - - - - - - - - - - - - - - - RGURE 12 - TYPICAL REVERSE CURRENT, PER LEG"

FIGURE 11 - TYPICAL FORWARD VOLTAGE, PER LEG

100
0

so
TJ= lSO'C
30

/

0
l00"C

if

~

0

15
a:

7. 0

::>

5. 0

~
a:
~

3. 0

'"::>@

2.0

....

a:
u
c
a:

z
~
z
~

'"

'"

.!f.

~

./

/ /

p t::s

V . . .V
./

1....
15
a:

a:

::>
u
~

~

~
a:

1/25'C

5

/

/

7

I

I J
/

II II
J J

1.0

V

~ t;:: 'The CUNes shown are Iypicallor the highest voltage: ~
r-- I- device in the voltage grouping. Typical reve"e current- f - 1.0K f== 1= for lower voltage selections can be estimated Irom=
these same CUNes ilVR is sulliciently below rated VR.: ~
400
200
100
TJ 150'C
40
r,.;-"
20
10
100'C
4.0
~
2.0
1.0
0.4
25'C
0.2
0.1
0.04
0.02
0.01
100
200
300
400
SOO
SOD
VR. REVERSE VOLTAGE IVOLTS!

O.

I

I II

V

II

0.3
O.

I

J

i=co:

'"c

~_.

'"2i

I

I II

OA

O.S

8.0
7.0
S.O
5.0

ffi

~

I

,II 1/

9.0

~ 4.0

'/ II

2

1.0

0.8

1.2

1.4

1.S

1.8

~

a:

.0...8. 0
7.0

a

6. 0

~

5.of--

~

4. 0

~

3. 0

!i!

ffi~

I
I
ROJA = lS'Cm
---- ROJA = so'cm
INa Heat Sink!

~c

,-........
'h.
Square
e

'- wr

,""-

dc

2.of-- ~s;a;'::--

~ 1.Of--f--Wr
0
W 40

$

I

I

~

i'-... ""'-

- --

..........

:;

r-.::

:::. ...

~

50
50
~
W ~
TA. AMBIENT TEMPERATURE I'C!

Rectifier Device Data

..

~

~

~

'\

Square Wave

140

~'"~

150
ISO
Tc. CASE TEMPERATURE 1°C!

~

170

"

180

FIGURE 15 - POWER DISSIPAnON, PER LEG

S

4
I3
./
~
I2
./
is I I
/"
Wave......
~ 10
/dc~ 9. 0
o 8. 0
,/ /"
a: 7. 0
/'
0
6.
./ / '
~
5. 0
~ 4. 0
V
~ 3. 0
/i-""
TJ = 175'C I--~ 2. 0
""'-:::1-"
1.0.."
0
1.0
2.0
3.0 4.0
5.0 S.O 7.0
8.0 9.0
10
IFIAV!. AVERAGE FORWARD CURRENT lAMPS!

Squ~re

~

"'~I'-..

"" 1''"." .'""-"

'"
~ 2.0
~~ 1.0
:;c

FIGURE 14 - CURRENT DERATING, AMBIENT, PER LEG

if
~
!Z

Rat,d VR Applied

~c

3.0

vF. INSTANTANEOUS VOLTAGE IVOLTS!

0

-

-- --

10

I

O.5

-

F=

FIGURE 13 - CURRENT DERAnNG, CASE, PER LEG

1/
~

O.7

==

.....-

.F

~

~

4--49

•

I

MUR1620CT, MUR1640CT, MUR1660CT

FIGURE 16 - THERMAL RESPONSE

Z/lJCIII=Dcuryes
11t1RruCapptyfor power
pU1H train shown

i~~~~~!1

readltmeatT,

~

lZ

,./"

Si~91. Puis.

Duty o,d. D = 1112

TJI,k) - TC

= 'I,k) ZruCll1

ll'i 0.02/-........
-:::;:oI"""'I--t-t-t--t-1-t+t-+-+--+-I-+-t+t++--+--+-t-t-t-"""t""1"""t"t"r--;--r-----r-;--r-t-rt""tt--+-+-H-++-t+H

g. 0.Q1 F-l-t--+--+-1,H,+"++"+-t-t-+-hrt+++t--+-t-+--1'--,H,--+,t1,,+-+-+,--+-I--H,,H,,t1,+-+-+--+-I--t-H-tH
~

0.Q1

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

IK

t. TIME Im,l

FIGURE 17 - TYPICAL CAPACITANCE, PER LEG

I.OK
--- MUR1620CT Ihru 1660CT
MURI605CT thru 161 5CT

II

300

~
w

~ 100

-

r--

I

- r-

TJ=25'C

-

u 30

10

4-50

1.0

10
VR. REVERSE VOLTAGE (VOLTS)

100

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

Switch mode

MUR1620CTR

Dual Ultrafast Power Rectifiers
· .. designed for use in negative switching power supplies, inverters and as free wheeling diodes.
Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase
full-wave bridge. These state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package)
Ultrafast 35 Nanosecond Reverse Recovery Times
Exhibits Soft Recovery Characteristics
High Temperature Glass Passivated Junction
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures
Epoxy Meets UL94, Va @ 1/8"
Complement to MUR1605CT Series of Common Cathode Devices

Motorola Preferred Device

ULTRAFAST RECTIFIERS
16 AMPERES
200 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 56 units per plastic tube
• Marking: U1620R

"-~;I-.4

3~

O.

•

1

2
3

CASE 221A-06
TO-220AB
STYLE 7

MAXIMUM RATINGS (Per Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Voltage, (Rated VR), T C
Per Leg
Per Tolal Device

=160°C

Peak Repelitive Surge Current, Per Diode
(Rated VR, Square Wave, 20 kHz) TC 140°C

=

Nonrepetitive Peak Surge Currenl
(Surge applied al raled load conditions hallwave,
single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature

Symbol

Value

Unit

VRRM
VRWM
VR

200

Volts

IF(AV)

8.0
16

Amps

IFM

16

Amps

IFSM

100

Amps

TJ, Tstg

-65 to +175

°C

THERMAL CHARACTERISTICS (Per Leg)
Thermal Resistance -

Junction to Case

2.0

ELECTRICAL CHARACTERISTICS (Per Leg)
Maximum Instantaneous Forward Voltage (1)
(iF = 8.0 Amp, T C = 25°C
(iF = 8.0 Amp, T C = 150°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, T C = 25°C)
(Rated dc Voltage, T C = 150°C)

iR

Maximum Reverse Recovery Time
(IF = 1.0 Amp, dildt = 50 AmplllS)
(IF = 0.5 Amp, dildt = 100 AmplllS)

Irr

Volts
1.2
1.1
IlA
5.0
500
ns
85
35

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle,; 10%.

Rev 1

Rectifier Device Data

4-51

MUR1620CTR

!:i SOD

~

200

~~r-r-+-+-+-~1-1-~~~~~~-4

~

100

30

1-+--+--+--+-+---1r- TJ = 175°C ~~""V_t-+---t

U)
!1i

20

t--+--t--t--f--+--t--+-H/'Wf'--tl--V-t--t--t-----l

f///

~

Iliil~iii!III!III;111
~.T

,t:
~~l!O°C;

50
1000
20
=11 O°C:
~ 10
5 ~ *1 he curves shown are typical for the highest:::
~ voltage device in the voltage grouping. Typical ~
1 ~ reverse current for lower voltage selections ca~ ~
~
E be estimated from these same curves if VR is ~
::: 0.5 ~ sufficiently below rated VR.

1==

=

~ 0.'
0
0 . 2 i i• •_
~ 0.05
~ 0.03
. 25°C'
~ 0.02

ill.

rH'-

150"C

'" /100°C

•

0.01 0

/l' I

I

"

I

40

60
80
100 120 140
VR, REVERSE VOLTAGE IVOLTSI

~

200

16

~ 14

RATED VR APPLIED

>~ 12

g:;:
0.3

1-+-+-t---IfH--t--+-H-t-+--+--t-+-+-1

0.2

1-+-++-iJI-liI-++++-+-I-+-+-+-4

I

o

ROJC = 2°CIW
10

~

.......

I

"

:\oDC

~

SQUARE~

~

~

0.4

180

Figure 2. Typical Reverse Current* (Per Leg)

1-+_+--+-+-fHft,-+---l1-t--t--+-+-----I-+_-I

0.2

160

1/25°C

O.7mBOOWBlE
0.5

20

0.6

0.8

1

1.2

1.4

vF, INSTANTANEOUS VOLTAGE (VOLTS I

WAVE

~

!

L

&..
"\

a
150

140

Figure 1. Typical Forward Voltage (Per Leg)

160
170
Tc, CASE TEMPERATURE lOCI

180

Figure 3. Current Derating. Case (Per Leg)
_ 16

ROJA

1=-=

~~

= 16°CIW

........

fi

35

r-...... . . . r-.....

~

75

~

100

125

~

~~

~ 2
~o

1"-.

150

175

Figure 4. Current Derating. Ambient (Per Leg)

200

/

/'

V"

V/V

V . . . . V DC

~

TA, AMBIENT TEMPERATURE lOCI

4-52

SQUARE
WAVE

 on dovlce characteristics - are given to faCilitate "worst case" design.
Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

4-54

Rectifier Device Data

MUR5150E

TYPICAL ELECTRICAL CHARACTERISTICS

::;

~

100

~

50

zw

a:
a:
u
c
a:

1000

<
2,
J....-:: -......

20
10

~
a:

Z

w

a:
a:

::0

::2

w

@ 1.0
~ 0.5
;0;

0.1

"
3.0

== ~5°C

0.01

a:

1.4
1.8
2.2
2.6
Vf; INSTANTANEOUS VOLTAGE (VOLTS)

0.001 0

3.4

Figure 1. Typical Forward Voltage

iii

~

15

7.5

w

~w
S-

f-

Z

W

~

2.5

~

~
0..

3

5.0

~

4.0

w

3.0

w

2.0

f:2

~

~" /

2

6.0

::0

g
a:

/ V

~

(RATEb
RWC = .O°CIW

:5.. 7.0

/ /'
SQUARE . /
WAVE
./
/ . / de

gj

-c 12.5
a:
~ 10

~

~ i'-..
I~

5

6

85

95

90

Figure 3. Forward Power Dissipation

225
200

u:-

300

OV=240pF
100 kHz ,;1,; 1.0 MHz

150

;0
13

125

z

if:.

a:
w
> 180

"

0

u

w
a:
w
en

r-.....

100

'-'.

~

w

.s 175
w
u

a:
w
>
w
a:

i'-

75

--

50
25

Figure 5. Typical Capacitance

150
120
90

Ii: 60

r-t---,

10
VR, REVERSE VOLTAGE (VOLTS)

~

100
105
110
115
TC, CASE TEMPERATURE (0G)

120

125

Figure 4. Current Derating Case

~~:d~L C~P~CI~A~C~ ~+ I

\

~ r-...

I

IF(AV), AVG FORWARD CURRENT (AMPS)

250

"'-

SQUARE ~ ,de
WAVE

~1.0

4

1.5K

V~AP~L1ED)

::;

I"

is

0.6K
0.9K
1.2K
VR, REVERSE VOLTAGE (VOLTS)

~ 8.0

/

TJ = 125°C

~ 17.5

0.3K

Figure 2. Typical Reverse Leakage Current

20

~

80°C

-~

a::.

1.0

TJ _125°C

w

CJ

~

~

10

u

25°C

f:2

--

100

f-

".

TJ-125°C~ ~85°C'"

::0

a:

f-

100

200

VR = 30 V

di/dt = 100 N~s

-::;:.....~

--

1--' I-

50N~s

1--;rN~S

I-- ......

-

180 'i[
- 1 60 tlj

- --........ V

---

l00N~s

..L.l 40 ~
u
80

fi:
~
frl
a:

60

~

120

../ 100

40
20

30
1.5
22.533.5
4
If; FORWARD CURRENT (AMPS)

4.55 0

STORED RECOVERY CHARGE
- - - REVERSE RECOVERY TIME

Figure 6. Typical Reverse Switching Characteristics

Rectifier Device Data

4-55

c

~
a:
a:

o

MUR820
MUR840
MUR860

MOTOROLA

_ SEMICONDUCTOR
TECHNICAL DATA

•

•

•

, Motorola Preferred Devices

Switch mode Power Rectifiers
· .. designed for use in switching power supplies, inverters and as free wheeling diodes,
these state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

•

ULTRAFAST
RECTIFIERS

Ultrafast 25, 50 and 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Popular TO-220 Package
Epoxy meets UL94, Vo @ l/S"
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 600 Volts

8 AMPERES
200-400-600 VOLTS

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All Extemal Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: US20, US40, US60

4

CASE 2218-03
TO-220AC

3

MAXIMUM RATINGS
MUR
Symbol

820

840

860

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

200

400

600

Volts

Average Rectified Forward Current
Total Device, (Rated VR), TC 150°C

IF(AV)

S.O

Amps

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz),
TC 150°C

IFM

16

Amps

Nonrepemive Peak Surge Current
(Surge applied at rated load conditions hallwave,
single phase, 60 Hz)

IFSM

100

Amps

TJ, Tstg

-65 to +175

°C

Rating

=

=

Operating Junction Temperature and
Storage Temperature

THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case

2.0

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF S.O Amp, TC 150°C)
(iF S.O Amp, TC 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ 150°C)
(Rated dc Voltage, TJ 25°C)

iR

Maximum Reverse Recovery Time
(IF 1.0 Amp, dildt 50 Amp/lIS)
(IF 0.5 Amp, iR 1.0 Amp, IREC

trr

=
=

=
=

=
=

=
=

=

=

=0.25 Amp)

Volts
0.S95
0.975

1.00
1.30

I

250
5.0

500
10

35
25

60
50

1.20
1.50

IlA

ns

(1) Pulse Test: Pulse Width = 300 Ils, Duty Cycle ';2.0%
Rev 3

4--56

Rectifier Device Data

MUR820, MUR840, MUR860
---------------------------------- MUR820---------------------------------FIGURE 2 - TYPICAL REVERSE CURRENT"

FIGURE 1 - TYPICAL FORWARD VOLTAGE
100

'The CUNes shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from
these same CUNes if VR is sufficiently below rated VR.

70
1.0K
400

50

~
I-

7.0

~

5.0

u

I

/

0

~a:
~

'"
~

@
z
;5
z
;5

'"

~

.!:?

1/

/ II

/

10

z

lli
a:

/

I

40

~

4.0

.!#. 0.4
0.2
0.1
0.04
0.02
0.01

/

II II II

3.0

~

I

I
TJ =0 175°C /

-

25°C

o

~

I
~

1/

a

/
0.2

I

0.4

0.6

i"'--.

70

"'-

~ 40

i

...

0.8

1.0

1.2

~

~

150
160
TC, CASE TEMPERATURE lOCI

140

~ 10

I

I

0

a:

""

~

ffi'"

80

e-e--

--R8JA= 16°C/W=
- - - RHJA = 60 0 C/W
(No Heal Sinkl . - I - -

-- --

40

>

"': 20
S

1

f'....

r--

a

o

20

"-

Square Wave - -

'-

40

60
80 100 110 140
TAo AMBIENT TEMPERATURE (OCI

Rectifier Device Data

_. - .
SIlI/,He Wave V
-

6.0

a:

50

0..

40

V

Ti= 175°C

V V

V

./

/'"
de

V V
/ ........ V

~

~
~

~
160 180

180

10

9.0
~
z 8.0
co
7.0

~
co

-- --- ""
-- -I
I
.......

"

~

~

......... ...........

de

.

in

In
~
co

r-- '--SquareW~ f'....

60

170

FIGURE 5 - POWER DISSIPATION

a:

B

~

~

20

CURRENT DERATING, AMBIENT

~

~

f'..'\..

S: 1.0

I
r--- I""'-...

"'"

'\
Square Wave

~ 3.0

14

in
~
:0. 11

~

f".,de

f'.."

60

vF, INSTANTANEOUS VOLTAGE (VOLTSI
FIGURE 4 -

~

Rated VR Applied

80

::i1 50
~

/ /
I I
I I

0.2

rn

~ 90

/100°C / 25°C

g§

I

~

FIGURE 3 - CURRENT DERATING, CASE

0.7

0.3

~

-"

10

~

I

~

40

.....

VR, REVERSE VOLTAGE (VOLTSI

1.0

0.5

-

l00"C

I

2.0

0.1

=TJ 175"<:

~ ~:~

I

/

-

a ~~ = -

V/ ~/

20

ii!
~

1 ~~

, /V

30

~

V

./

~~

200

1.0

2.0 3.0 4.0
5.0 6.0 7.0 8.0
IF(AVI, AVERAGE FORWARO CURRENT (AMPSI

9.0

4-57

10

•

MUR820, MUR840, MUR860

~--------------------------------MUR840---------------------------------FIGURE 6 - TYPICAL FORWARD VOLTAGE

FIGURE 7 - TYPICAL REVERSE CURRENT'

100
'The curves shown are typical for the highest voltage
device in the vOltage grouping. Typical reverse current
for lower voltage selections can be estimated from
these curves if VR is sufficiently below rated VR.

70
1.0K

50

400

30
20

ie

/

:E

10

i'"

7.0

V

V

::::>
0

w

5.0

t/

'i

3.0

/

V

"""-

/

/

2.0

/

/ /

1.0

~

~
a:

.s.

I

100°C /

I

20
10

w
~

V

TJ-175OC=
15O"C-

40

a'"

J

TJ= 1750

;:!:

~

il

/

:z

~

~ ~~

L

1/

0

en

~

/

/

5

a
~EC

,/'
./

....

l00"C_

4.0
2.0

1.0
0.4
0.2
0.1
0.04
0.02
0.01

-

.....
o

50

~

/
~

9.0

,'" i'0:t.."

~ 8.0

0.2

o

0.4

a:

1/ /

/ /

0.1

f2

6.0

1.0

1.2

1.4

!Z
w

a:
'"

10

I

8.0

a
EC

~

~

1

R8JA = 16"CtW ---- R8JA=60°CtW(No Heal Sink) -

t:==: ::;:-dc:h,.

..........

'"'f.,..

_ Square
6.0 I-Weve
4.0

2.0 ,...-- -

-

o
o

4-58

20

r--...

,-- ::
Square
Weve
~

0

~
2S

a:

.......

~

........

w

.......

~ :-:-~c.

~~

z

10
9.0
8.0

TJ=175OC

/

~ 7.0

I"--... .............

--

......

'

~
~

-- -- --.

60
60
~
m ~
TAo AMBIENT TEMPERATURE (OCI

'"ffi
;;:
E
~

~

Square

6.0

Wavy

5.0

180

/

/

V
./

V

1/ ~

V

./ / '

4.0

/'

3.0

/

/' /

2.0

~ 1.0

)..,..,

~

170

FIGURE 10 - POWER DISSIPATION

14
12

~

'\
150
160
TC. CASE TEMPERATURE (OCI

FIGURE 9 - CURRENT DERATING. AMBIENT

ie

"" "

........ ~

~ 1.0
1?
140

1.6

Rated VR Applied

"-

vF. INSTANTANEOUS VOLTAGE (VOLTS)

5

~

Square Wave

30
;;: 2.0

0.8

~

"'- .""-

4.0

~

/
0.6

400

~

c

~ 5.0

I

I

~

FIGURE 8 - CURRENT DERATING. CASE

a

I

~

10

~ 70

I
II

~

.,-

VR. REVERSE VOLTAGE (VOLTSI

:z

0.3

:E

~

250C

.!f- 0.7
0.5

-

250C

~

V

~

u

~

~

~

M

M

n

M

~

IFIAVI. AVERAGE FORWARD CURRENT (AMPS)

Rectifier Device Data

w

MUR820, MUR840, MUR860

----------------------------------MUR860---------------------------------FIGURE 11 -

TYPICAL FORWARD VOLTAGE

FIGURE 12 -

100

==: i= 'The curves shown are typical for the highest voltage ==:

0
0
TJ= 150"C
0
100"C;> ~ I"

V

/ /

0

:;;
1:7
,.....
/"
/'

/" V

0

/

1.0K
400

!Z
~

aa:
~

)- device in the voltage grouping. Typical reverse current

F for lower voltage selections can be estimated from

=

/

100"C

I-"

/

/

0

V

/

0

II

200

FIGURE 13 -

ie
~

o.7
/

II

I II

2

:::>

SO

~

40

'"ffi

30

~

10

~

II

O.s

0.8

"" r-...."-

1.0

1.2

1.4

1.8

I.S

'" ~"
'" I'-"\.

Square Wave

~

20

J!'

140

150

vF INSTANTANEOUS VOLTAGE (VOLTS)
FIGURE 14 -

!Z

g§

oIi!

~
a:
!2

i

~

10
9.0
8.0

-

4.0

"f.... f'....

2.0

-

Square
wive

-

o
o

-Squa;-

~

:::. ...

wre
~

~

60

60

m m

TA. AMBIENT TEMPERATURE I"C)

Rectifier Device Data

10

c

9.0
B.O

a:

7.0

~

""- f'....

6.0
w 5.0
~ 4.0
~ 3.0
~ 2.0
1.0

"- ~
- --:r- -- -- ,..:::
--......: "'~
-

~

~

~

i!!'.
~

i'.. .........

dc

3.0

~ 1.0

J!'

1""'-

-

6.0
5.0

I R~A=ISlCNL
____ R8JA = 6O"CIW
(No Heat Sink) -

I

14
13
12
11

~

...

E

~

~

~

~

""'

160
TC. CASE TEMPERATURE (OC)

FIGURE 15 -

CURRENT DERATING. AMBIENT

r--- ~c

7.0

CURRENT DERATING. CASE

I~c

50

w

!2

/

I

O. 1
0.4

600

Rated VR Applied

80
70

c

/

500

90

Z

~
a:
u

I

I II

II

25"C

300
400
VR. REVERSE VOLTAGE IVOLTS)

0-

O.3

.-

10

L

/ I

O.5

i

-

-I-"

/

II /

0

/

/

/

=

~

0.2
0.1
0.04
0.02
0.01
100

/

-

-

150"C

TJ

Ji:. 0.4

0

O.

40
20
10
4.0

~ ~:~

/25"C

-

==: i= these same curves if VR is sufficiently below raled VR. ==:

1 ~~

0

....

TYPICAL REVERSE CURRENT'

170

180

POWER DISSIPATION

I

/
I/,

Squ~re
Wave/,

I"

/

./

""dc-

V

. / ./"
/' /'

,...

o
o

u

....-

V

/ : i-"'"

TJ=175"C

~ i-"'"

u

-

I

u

~

~

~

U

M

M

IFIAV). AVERAGE FORWARD CURRENT lAMPS)

4-59

W

•

MUR820, MUR840, MUR860

FIGURE 16 -

5

~

1.

~

O. 5

D

0.5

~

~

z

~~
~

O. 2
O. 1

~ 0.05

-

f-'

V

!Z

~ 0.02 I--"'"

V

0.01

•

.,....

10.1

~

I---' I::::

v
Z/JJClt) = rlt) R/JJC
R/JJC = 1.5"C!W Max
Dcurves applv for power
pulse train shown
-~1~
read time atT1

V

Plpk)

tJUl

0.01

~inglel Pulse

~.O.O1
~

THERMAL RESPONSE

0

Duty Cycle, D = tlh2- TJlpk) - TC = Plpk) Z/JJClt)

IIIII

IIIII
0.02

0.05

0.1

0.2

0.5

2.0

1.0

FIGURE 17 -

1.0K

300

~
~

100

10

TTiIT

I
50

20

100

200

500

lK

TYPICAL CAPACITANCE

-

-- -- -

5.0

t. TIME Im.1

- - - MUR840, MUR860
MUR820

TJ=25'C

i"'-r-.

-

u
;;<,

<5

u 30

10

1.0

10

100

VR, REVERSE VOLTAGE (VOLTS)

4-60

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

Switch mode Power Rectifiers
Ultrafast uE" Series
w/High Reverse Energy Capability

MUR890E
MUR8100E

· .. designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•
•
•

MUR8100E 18 a
Motorola Preferred Device

20 mjoules Avalanche Energy Guaranteed
Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Popular TO-220 Package
Epoxy Meets UL94, Vo @'1I8"
1
Low Forward Voltage
3
4
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 Volts

ULTRAFAST
RECTIFIERS
8.0 AMPERES
900-1000 VOLTS

:J---o

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All Extemal Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: U890E, U8100E

•

CASE 221 B-03
TO-220AC

MAXIMUM RATINGS
MUR
Symbol

890E

8100E

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

900

1000

Volts

Average Rectified Forward Current Total Device, (Rated VR), TC = 150°C

IF(AV)

8.0

Amps

IFM

16

Amps

IFSM

100

Amps

TJ, Tstg

-65 to +175

°C

Rating

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 150°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature

THERMAL CHARACTERISTICS
2.0

Maximum Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 8.0 Amp, TC = 150°C
(iF = 8.0 Amp, TC = 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TC = 100°C)
(Rated dc Voltage, T C = 25°C)

iR

Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/liS)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)

trr

Controlled Avalanche Energy
(See Test Circuit in Figure 6)

Valls
1.5
1.8
IiA
500
25
ns
100
75

WAVAL

20

mJ

(1) Pulse Test: Pulse Width = 300 lis, Duty Cycle'; 2.0%.

Rev 1

Rectifier Device Data

4-61

MUR890E, MUR8100E

100

=

- 'The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
lK :::: for lower voltage selections can be estimated from
these same curves if VR ij Suf!iCijntly below rated VR.
400
200
17SoC
100
TJ

70

=

50

30

/'

20

/'

/
/

10

/

V

V

1/

/

L

~

•

TJ = 175°C

I

1000C

V

II

/

1

~
_
$

I
0.1
0.4

J

0.4
0.2
O. 1
0.04
0.02
0.01

o

100"C

,...200

25°C/

V

"'15°c

lK

BOO

I
~

0.8
1.0
1.2
1.4
VF.INSTANTANEOUS VOLTAGE !VOLTS)

l.S

Rated VR
Applied

"-

Ii'..... I\.. de
Square'
'\.
Wave

/

0.6

.--

400
SOO
VR. REVERSE VOlTAGE (VOLTS)

/

/

--

Figure 2. Typical Reverse Current*

/

/

I
I

0.2

/
If

I
II

0.3

/

-

III

/

/

150°C

a

/

/

/

-

~_ 40
20
!Z 10

/

,..-

"

'\.
,,,,-

1.8
150

Figure 1. Typical Forward Voltage

'" "
~

ISO
TC. CASE TEMPERATURE 1°C)

180

170

Figure 3. Current Derating. Case

L

~(lJA! IS°ck..........

dc

'--- .............

-

,

----R(lJA = 6O°CJW(No Heat Sink) -

Square ...........
Wave

"-

= -- --

Square
1 ~Ware
20

'"

40

~-

Square /
Wave/

./'

./'
/'

/'

~

/'
./' / '
./

.......

~

-- --

........ ~

SO
BO
100
120 140 ISO
TA. AMBIENT TEMPERATURE (OC)

Figure 4. Current Derating. Ambient

4-62

/

i'..
r--....

,
-- - .... ................
......

dc

/

1,/
180

200

~

~

/'

TJ =' 175°C

-

'./

2345S78
'FIAV). AVERAGE FORWARD CURRENT (AMPS)

10

Figure 5. Power Dissipation

Rectifier Device Data

MUR890E, MUR8100E

BVOUT
r----1~--------_oVO

10

MERCURY
SWITCH
S1

Figure 6. Test Circuit

Figure 7. Current-Voltage Waveforms

The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche capability ofthe new "E" series Ultrafast rectifiers.
A mercury switch was used instead of an electronic
switch to simulate a noisy environment when the switch
was being opened.
When 51 is closed at to the current in the inductor IL
ramps up linearly; and energy is stored in the coil. At t1
the switch is opened and the voltage across the diode
undertest begins to rise rapidly, due to di/dt effects, when
this induced voltage reaches the breakdown voltage of
the diode, it is clamped at BVOUT and the diode begins.
to conduct the full load current which now starts to decay
iinearly through the diode, and goes to zero at t2.
By solving the loop equation at the point in time when
51 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy
transferred is equal to the energy stored in the inductor
plus a finite amount of energy from the VOO power supply while the diode is in breakdown (from t1 to t2) minus

any losses due to finite component resistances. Assuming the component resistive elements are small Equation
(1) approximates the total energy transferred to the
diode. It can be seen from this equation that if the VOO
voltage is low compared to the breakdown voltage of the
device, the amount of energy contributed by the supply
during breakdown is small and the total energy can be
assumed to be nearly equal to the energy stored in the
coil during the time when 51 was closed, Equation (21.
The oscilloscope picture in Figure 8, shows the
MUR8100E in this test circuit conducting a peak current
of one ampere at a breakdown voltage of 1300 volts, and
using Equation (2) the energy absorbed by the MUR8100E
is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new "E" series provides added protection against those unforeseen transient viruses that can
produce unexplained random failures in unfriendly
environments.

CHANNEL 2:

EQUATION 11):
W

AVAL =

IL

0.5 AMPSIDIV.

1 U2
(
BVDUT
)
LPK BVOUT - VOO

2'

CHANNEL 1:

EQUATION (21:
WAVAL =

VOUT
, 500 VOLTs/OIV.

~ utPK

i

TIME BASE:
2O!'SIOIV.

Figure 8. Current-Voltage Waveforms

Reclifier Oevice Oala

4-63

•

MUR890E, MUR8100E

s

~

D

~ 0.5

0.5

-- - -

0
~

w

u
z
;5 0.2

'"
Hi
'"

i-- f-

0.1

~

...- p

I-;:.

lo.l

ZeJC(11 = rill R9JC
R9JC = 1.5°CJW MAX
DCURVES APPLY FOR POWER
PULSE TRAIN SHOWN
-~1;-~
READ TIME ATT 1

V

fats
0.01

P(pl:1

tJ1Sl

~ 0.05

~

in 0.02

~_ 0.01

'E

~

....-

0.01

'-"'""

V

SINGLE PULSE

DUTY CYCLE. D = 11n2 TJ(pkl - TC = P(pkl ZOJC(II

IIIII
0.02

0.05

I IIIIII

0.1

0.2

10

0.5

I
20

IIIII
50

100

I
200

500

lK

I. TIME (msl

Figure 9. Thermal Response

•

lK

300

""-

~
~

-

-r-

TJ = 25"C

-I--.

~ 100

§
U 30

10
1

10
VR. REVERSE VOLTAGE (VOLTSI

100

Figure 10. Typical Capacitance

4-64

Rectifier Device Data

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

SCANSWITCHTM

MUR10120E

Power Rectifier For High and Very High
Resolution Monitors

Motorola preferred Device

This state-of-the-art power rectifier is specifically designed for use as a damper diode in horizontal
deflection circuits for high and very high resolution monitors. In these applications, the outstanding
performance of the MUR10120E is fully realized when paired with either the MJH16206 or MJF16206
monitor specific, 1200 volt bipolar power transistor.
•
•
•
•

SCANSWITCH
RECTIFIER
10 AMPERES
1200 VOLTS

1200 Volt Blocking Voltage
20 mJ Avalanche Energy (Guaranteed)
12 Volt (Typical) Peak Transient Overshoot Voltage
135 ns (Typical) Forward Recovery Time

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: U10120E
MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

1200

Volts

Average Rectified Forward Current
(Rated VR) TC = 125"C

IF(AV)

10

Amps

Peak Repetitive Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz) TC = 125"C

IFRM

20

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase. 60 Hz)

IFSM

100

Amps

Operating Junction Temperature

TJ

Controlled Avalanche Energy

-65 to

+ 125

20

WAVAL

"C
mJ

THERMAL CHARACTERISTICS
Thermal Resistance -

Junction to Case

2.0

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Maximum Instantaneous ForwardVoltage II)
(IF = 6.5 Amps, TJ = 125"C)
(IF = 6.5 Amps, TJ = 25"C)

VF

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage, TJ = 25"C)
(Rated de Voltage, TJ = 125"C)

iR

Maximum Reverse Recovery Time
(IF = 1.0 A, dildt = 50 AmpsilLs)
Maximum Forward Recovery Time
IF = 6.5 Amps, diidt = 12 AmpsilLs (As Measured on a Deflection Circuit)
Peak Transient Overshoot Voltage
(1) Pulse Test: Pulse Width

=

Typ

Max

Unit
Volts

1.7
1.9

2.0
2.2

25
750

100
1000

trr

150

175

ns

tfr

135

175

ns

VRFM

12

14

Volts

ILA

300 p.s, Duty Cycle,;;:;: 2.0%.

Rev 1

Rectifier Device Data

4-65

•

MUR10120E

1000

100
70

0

125'C
~

0
20

100'C

~

125'V:;

1

/ '/

~ h5'C

-

/

100'C

..J..-"""

-

85'C

I-'"'" 25'C

1

85'C
0,0 1

'(/

/

h

•

II fL

/ VI

II/I
1

hV

/

I

200

400
600 800
1K 1,2K
VR. REVERSE VOLTAGE IVOLTS)

I

II

V

Figure 2. Typical Reverse Current

0
RATED VR APPLIED

.!:f.

0.7

0, 5!IJ

~

~
,~c

SQUARE WAVE' ~

0, 2

~

~

1
0,8

0,6

1.2

1,6

1.4

1.7

1.8

105
VF.INSTANTANEOUS VOLTAGE IVOLTS)

Figure 1. Typical Forward Voltage

110
115
TC. CASE TEMPERATURE I'C)

120

Figure 3. Current Derating, Case

"

125

5
ROJA

"''""
15

30

~

2

--:/

9

"'"'""

~

"" --...;:

SQUARE WAVy

t--.

3

~

"

45
60
75
90
105
TA. AMBIENT TEMPERATURE I'C)

120

5
135

150

/'"

.....-::: r::.--dc

6

~

Figure 4. Current Derating, Ambient

4-66

TJ = 125'C

16'CIW

~~

~

~V

';:::1-'"'"

2345678
IFIAV). AVERAGE FORWARD CURRENT lAMPS)

Figure 5. Power Dissipation

Rectifier Device Data

10

MUR10120E

500

I

TJ = 25°C
TYPICAL CAPACITANCE
AT 0 V = 500 pF

400

~

~ 300
z

-

. . . . r---..
..............

too

r---"

<.5

100

:--

- r-

50

o
1

10
VR, REVERSE VOLTAGE (VOLTS)

~

100

Figure 6. Typical Capacitance

Rectifier Device Data

•

4-67

I

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Designer'sTM Data Sheet
SCANSWITCHTM
Power Rectifier

MUR10150E
Motorola Preferred Device

For Use As A Damper Diode In High
And Very High Resolution Monitors

SCANSWITCH
RECTIFIERS
10 AMPERES
1500 VOLTS

The MURl 0150E is a state-of-the-art Power Rectifier specifically designed for use
as a damper diode in horizontal deflection circuits for high and very high resolution
monitors. In these applications, the outstanding performance of the MUR10150E is
fully realized when paired with either the MJW16212 or MJF16212 monitor specific,
1500 V bipolar power transistor..

II

•
•
•
•
•

1500 V Blocking Voltage
20 mJ Avalanche Energy Guaranteed
Peak Transient Overshoot Voltage Specified, 14 Volt (typical)
Forward Recovery Time Specified, 135 ns (typical)
Epoxy Meets UL94, Vo at 1/8"

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: Ul0150E

CASE 2218-02
TO-220AC

MAXIMUM RATINGS
Symbol

Value

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

1500

Volts

Average Rectified Forward Current, (Rated VR), TC = 125"C

IF(AV)

10

Amps

Peak Repetitive Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz), T C = 125"C

IFRM

20

Amps

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

100

Amps

Operating Junction and Storage Temperature

TJ, Tstg

-65 to +125

"C

Controlled Avalanche Energy

WAVAL

20

mJ

ReJC

2.0

"C/W

THERMAL CHARACTERISTICS

I Thermal Resistance -

Junction to Case

ELECTRICAL CHARACTERISTICS
Rating

=6.5 Amps, T J =125"C)
=6.5 Amps, T J =25"C)
Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, T J =125"C)
(Rated de Voltage, T J =25"C)
Maximum Reverse Recovery Time (IF =1.0 Amp, di/dt =50 AmpS/liS)
Maximum Forward Recovery TIme (IF =6.5 Amp, di/dt =12 Amps/liS)
Maximum Instantaneous Forward Voltage (1)

(iF
(iF

Peak Transient Overshoot Voltage

Symbol

Typ

Max

Unit

vF

1.7
1.9

2.2
2.4

Volts

iR

750
25

1000
100

(.lA

trr

150

175

ns

tfr

135

175

ns

VRFM

14

16

Volts

(1) Pulse Test PulseWldttJ = 300 ).Ls, Duty Cycle :S;2%.
Designer's Data for "Worst Case" Conditions - The DeSigner's Data Sheet permits the design of most CircUits entirely from the information presented. SOA Limit curves - representing
boundaries on device characteristics - are given to facilitate "Worst case" deSign.

Preferred deVIces are Motorola recommended choices for future use and best overall value.

Rev 1

4-68

Rectifier. Device Data

MUR10150E

1000

100
;--

<'
~

;---

10

I-

zw

-

c::
c::

:::>

<.>

vV

20

w
en
c::
w
>
w
c::

/

/v V /

~ TJ = 125'C

0.1

Ji.

I-"'"

,

,OO'C

-

........... 25'C

0.01
4'5'C/

Y

1/ /
TJ=125'C!

/ /

1/ II
1

V

0.001

L

o

300

/25'C

/

Ii)

~

~ 40

I
o. 2
O. 1
0.4

I I

~

I

iiiCi

30

ffi

25

~~

I .I I

SI EWAVE
(RESISTIVE LO~

20

~ 15

II

0.6

SQU~y
WAVE

TJ = 125'C

~ 35

I

II

c::

0.8

1

1.5K

Figure 2. Typical Reverse Current

I

o. 5

600
900
1.2K
VR, REVERSE VOLTAGE (VOLTS)

1.2

1.4

1.6

vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

1.8

12
w

10

~w

~
-'- 0
~

.E

A
'!! ~

~

~

~ /"

/ ./"
V

::..-'

5
10
15
IF(AV), AVERAGE FORWARD CURRENT (AMPS)

0

de

20

Figure 3. Forward Power Dissipation

(RATEb VR AP~LlED)
Re. C = 2.0'CIW

,'""\

:-....

SQ~de
WAVE

~

~
95

105
115
TC, CASE TEMPERATURE ('C)

,

~

125

Figure 4. Current Derating Case

Rectifier Device Data

4-69

•

MUR10150E

500

~JIJLAPlcIT1NCE

~

w
o

'"

300

1'",

z

r-....

j:'!;

~
~

1T

OV=430pF

i'-...
400

f'. i"o..

200

t"-..I'

,...
f"-....

100

•

0
0.1

0.2

0.5

.......

r- t- ....
50

20

2
5
10
VR. REVERSE VOLTAGE (VOLTS)

100

Figure 5. Typical Capacitance

300

::[ 270 r-

!!1
i:;w
O
a:
w

~

IS!
w

a:

~

V

- ..... -

180 I - - dVdt = 50 A/f1S

V

,-

V

150
120

90
60

lK

V

I

240

>= 210
11:
w

V~=30J

.......

/'

'"

i-""""
......
100 A/f1S

/'

a?

800

~

V

.......... ...-

I
VR=30V

700 I - - f-- di/dt = 100 A/f1SL

8 500
ll'c!
ll'!
o

40 0
300

t;; 200

L

I-'

V
~

..-

~

/!V
. / / .......= 50 A/~s

11:
600
w

~

/" V

/' V

~

c:flO0
4
5
6
7
If', FORWARD CURRENT (AMPS)

Figure 6. Typical Reverse Recovery Time

4-70

900

w

.....

30
0

~

10

0

3

4

10

6

IF. FORWARD CURRENT lAMPS)

Figure 7. Typical Stored Recovery Charge

Rectifier Device Data

MUR1520
MUR1540
MUR1560

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

•

•

•
ULTRAFAST
RECTIFIERS

Switch mode Power Rectifiers
... designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following features:

15 AMPERES
200--400-600 VOLTS

Ultrafast 35 and 60 Nanosecond Recovery Time
o 175'C Operating Junction Temperature
o Popular TO-220 Package
o High Voltage Capability to 600 Volts
o Low Forward Drop
o Low Leakage Specified @ 150'C Case Temperature
o Current Derating Specified @ Both Case and Ambient Temperatures
o

..

4

Mechanical Characteristics:
o Case: Epoxy, Molded
o Weight: 1.9 grams (approximately)
o Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
o Lead Temperature for Soldering Purposes: 260'C Max. for 10 Seconds
o Shipped 50 units per plastic tube
o Marking: U1520, U1540, U1560

I

CASE 2218-03
TO-220AC
PLASTIC

MAXIMUM RATINGS
MUR
Symbol

1520

1540

1560

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

200

400

600

Volts

Average Rectified Forward Current (Rated VR)

IF(AV)

15
@TC;150'C

15
@TC=I45'C

Amps

Peak Rectified Forward Current
(Rated VR' Square Wave, 20 kHz)

IFRM

30
@TC=150'C

30
@TC=145'C

Amps

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)

IFSM

Rating

Operating Junction Temperature and
Storage Temperature

200

150

Amps

-65 to +175

TJ, Tstg

'C

THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction to Case

1.5

ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(iF = 15 Amp, TC = 150'C)
(iF = 15 Amp, TC = 25'C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, T C = 150'C)
(Rated de Voltage, T C = 25'C)

iR

Maximum Reverse Recovery Time
(IF = 1.0 Amp, dildt; 50 Amp!!,s)

trr

Volts
0.85
1.05

1.12
1.25

1.20
1.50

500
10

500
10

1000
10

~

35

60

ns

(1) Pulse Test: Pulse Width = 300 1'5, Duty Cycle,; 2.0%

Rev 1

Rectifier Device Data

4-71

MUR1520, MUR1540, MUR1560

----------------------------------MUR1520---------------------------------FIGURE 2 - TYPICAL REVERSE CURRENT

FIGURE 1 - TYPICAL FORWARD VOLTAGE
100

100

TJ - 150'C

/

I

II

/

10

5.0

a
~
~

!z:
II;!

a:

aljj
~

I

/

a:

/

1/

/

~ 2.0

2.0
1.0
0.5

0.05
0.02
0.01

o. 5

o

20

40

60

80

100

120

140

160

180

200

/
FIGURE 3 - CURRENT DERATING. CASE
~ 16
:=; 14
5.
!i 12

I I

I

III /
0.2

I

1

0.4

"\
I~

Rated Voltage Applied

} 2.0
0.6

0.8

1.0

1.2

o

1.6

1.4

140

IG 10~~~~~1_--+_~~~~~~~0.7~~

!:i

C>

80

a:

.

!!l

Sq..... W~""';;::""""~"'1_--WIlflJA = 16°C/W As Obtaine~_
....... .......
Fr.... A Small TO.220_
.......... ~ /
H••t Sink

--de

~
':-"

~

I
~
~
:- 4.0
... 2.0 r-IlfiJA = 60oC/W,.
........
_c::
o ~ As Obllillld in Fr.. iii. No H... Sink I--"I-..,g;~~-+--i

60

80

100

120

~

140

TA- AMBIENT TEMPERATURE (OC)

160

180 200

"

ISO

I--+--+--+----

12

~ 101--+--T--r--;-7'~~~~~+--;

C>

~ 8.0
::; 6.0

~~r~f.:t;~~~~~~~~l=t=~
SqulnW...

170

FIGURE 6 - POWER DISSIPATION

~ 14

N"

160

16r--,_-~--r--,_-_.--r_-,_-~

5

6.0

150

TC CASE TEMPERATURE (OC)

-

40

,,\..

4.0

FIGURE 4 - CURRENT DERATING. AMBIENT

20

Square Wave """

6.0

YF. INSTANTANEOUS VOLTAGE (VOLTS)

o

"'
" ,,"de

"- ,.~

Is.o

e~
:~

I

0.2

I I

"'-

~
B 10

I I

0.3

4-72

==

VR. REVERSE VOLTAGE (VOLTS)

.~

3:

25'C=

0.2

ff. 0.1

//

1.0

l!:

150'C
l00'C

I

/

z
~

ei

TJ

/ /

3.0

o.

1

~~

50
20
10
5.0

I

~

~
~

/'

/ / /

20

~

25'C

V /

30

~
~

/"

1/

50

~

./ lOO'.s-+-

'"
~
~

;; 2.0
c

1--+_--.I'~~h,L--bo""'-'''+--t_-+_--t

40 1_-+~~s.._'SIfL-+--+--I_-+---j

1_-.zi!574--.J1_-+--t--t--+---j

~
20

4.0

6.0

8.0

10

12

14

16

IF(AV}. AVERAGE FORWARD CURRENT (AMPSI

Rectifier Device Data

MUR1520, MUR1540, MUR1560

----------------------------------MUR1540---------------------------------FIGURE 6 - TYPICAL FORWARD VOLTAGE

FIGURE 7 - TYPICAL REVERSE CURRENT

100

100

TJ .~C

50

50

TJ

30

lllO"C r-- r-25'C

= 15O'C

a
~

/ 1/ /

l1lO"C25'C::::

~ 0.2
0.1

// /

10

'1
;::
~
g§

VV /

20

20
10
5.0
2.0
1.0
0.5

~0.05

0.02
0.01

LI
I II I

o

m

~

I II

/

~ 16

......

~ 14

0.3
0.2

I/
0.4

i

I

I I

0.1
0.2

a
c

I

I

II

e~

1.4

1.6

--

de

a

........
Square Waye I""'--.
8.0

~

6.0

~

4.0

!i!

f2

ffi

~ 2.0

/

K
" r--..J"

r--...

de

Square Way

~

•

150

,

I~

180
170
Te. CASE TEMPERATURE lOCI

180

FIGURE 10 - POWER DISSIPATION
16r---~---r---r---,----r_--~~~---,

~ 14~--+_--+---+---1---~~~~1

-

r-r-r--

~

is

12

•

10~--+_--~---+~-i~~~~~--~---1

Ii

~ 8.0

,
"
.......

,\.
"\

140

::; 6.0 ~--+__.."'b~.LbfC-'7fr<:.---f___,::-+:_:=~---1

'"~tOr_--~~~~F_--r_--r_--r_--r_~
~

~

"'1It
RillA - 6O'C/W
~
As obtained in free air. no heat sink
~
j!: 0
o
20
40
60
80
100 120 140 160 180
TA. AMBIENT TEMPERATURE lOCI

Rectifier Device Data

~

d.

JF 0

~

RillA = 16'CIW
,s obtained from
'/ ,sm,lI TO·220
Heat Sink

:....
......

" i'.. '"

Ratad Voltage Applild

~ 2.0

0.6
0.8
1.0
1.2
YF. INSTANTANEOUS VOLTAGE IVOLTSI

I

.....-

~

SquIre Wa..' "

4.0

12

10

~

1"-

6.0

FIGURE 9 - CURRENT DERATING, AMBIENT

~
!Z
!!§

~

"'" -'"

10
8.0

1

14

ff

~

FIGURE 8 - CURRENT DERATING. CASE

112
II

~

VR. REVERSE VOLTAGE (VOLTSI

V

/

I I

II I

50

~ 2.0~_n1f51?9---_+---t----f___,--+_--~---1

~ 0

200

0~~~--~4.~0--~a~0--~aO~~1~0---t12~~174--~16
IFIAV). AVERAGE FORWARD CURRENT (AMPS)

4-73

I

I

MUR1520, MUR1540, MUR1560

----------------------------------MUR1560---------------------------------RGURE 11 - TYPICAL FORWARD VOLTAGE

RGURE 12 - TYPICAL REVERSE CURRENT

200
·100

100

:~

1.... 5.0'0

TJ :,'50'C

30

~

20

V /

I

1/

1

50
.

/

~ 3.0

~
12

tL ~C

/v V V

10

II

TJ

50
20

50

i

2.0

/

/

4

ia

~

2.0
1.0

25°C

~

/

150

~

~

~

~

~

~

~

~

~

~

VR. REVERSE VOLTAGE IVOLTS)

/

il

l00'C

m 0.5
0.2
.iF 0.1
0.05
0.02

Iiiii

15O'C

1/

j

I
FIGURE 13 - CURRENT DERATING, CASE

~

fil

/ / II

:i!

~ 1.0

!i.!f-

16

1'4
!iii: 12

a
iii!

0.5

I
II

0.3
0.2

I

II

II

0.1
0.2

1.6

~

-

" "" "'" i'..."

1~

t"-

Ra/A=~

0

AI obtlined In free air. no heat link
20

~

~

~

~

m

'\

_

16r---r---r---r-~~~r-_,r_--r7~

~

i'!

14 t---i---'--'-t-----r

~ 12~--r_--r_--~--~-1r-~~--r_~

r'

O

8.0~--r_-+-.h~~_T_+'_--t_--t_-

w

14.0~--t7':lhl"¥'-..",.+_--+_--+_--+_-+_--i

~
-...:::::::~

~

~

C(

• 2.0

~

~

Jo

·~O~~--~--~--~--~--~--~1~4--~,6

TAo AMBIENT TEMPERATURE I'C)

4-74

180

~

.... ~

r--::: ~

170

~ 10~--r_--~_,~~~--~~~~~~

I'-'

Square Wave ?So

150
1~
TC. CASE TEMPERATURE 1°C)

~.

~

~

~

0

RGURE 15 - POWER DISSIPATION

Rili = lJew allobtlin~ - I-from I Imall TO-220
t-Hell Sink

........ ~

Square Wave ~

~

Rated Voltege Applied

S2.0

de

~

"~

~

RGURE 14 - CURRENT DERATING, AMBIENT

rT""'--

~

~ 4.0

0.6
0.8
1.0
1.2
1.4
vF. INSTANTANEOUS VOLTAGE IVOLTS)

OA

SquareWa~, I'..

~ 6.0

I
V

II I

=---

~~

18.0

I

I J

10

=""-

Rectifier Device Data

MUR1520, MUR1540, MUR1560

c

~

~~

I
:;;.

FIGURE 16 - THERMAL RESPONSE

1.0
0

0.5

-

0.11

0.5

0.2

'" O. 1

I-

~

-

e- -::::. ;..-

1ot5
0.01

k-:

V

!Z
........
ffi 0.02 .-

i--""

V

0.05

zruC(U '" r[!IRrue
AflJC = 1S·CWMax
o curves apply for power

pulse train shown

readtllnealT,

Dutv Cycle. 0 '" l,lIZ

IIIII
0.02

p[pk)

~;,:j

Si~~~~I~

goo1

:? . 0.01

P

tJUl

ffi 0.05

i=

-

TJlpk) - Te

IIIIII

0.1

0.2

1.0

0.5

2.0
5.0
t, TIME 1m,)

=

I

10

P/pklZruCltl

I III I

20

50

100

200

500

•

FIGURE 11 - TYPICAL CAPACITANCE

lK

-

500

r-~200

~100

~
u
~

TJ

-l-

50

I'-

25'C

-

<3

u

20
10
1.0

Rectifier Device Data

2.0

5.0
10
20
VR, REVERSE VOLTAGE IVOLTS)

50

lK

100

4-75

I

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Advance Information
SWITCHMODETM
Power Rectifiers

MURF820
Motorola Preferred Device

Designed for use in switching power supplies, inverters and as free wheeling
diodes, these state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

•

ULTRAFAST RECTIFIERS
8 AMPERES
200 VOLTS

Ultrafast 35 ns Recovery limes
150°C Operating Junction Temperature
Epoxy Meets UL94, Vo @ 1/8"
High Temperature Glass Passivated Junction
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369(1)

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All Exlernal Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: U820

CASE 221 E-{)l
ISOLATED TO-220

MAXIMUM RATINGS
Symbol

Value

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

200

Volts

Average Rectified Forward Current
(Rated VR), TC 150°C

IF(AV)

8

Amps

IFM

16

Amps

IFSM

100

Amps

TJ, Tstg

-65 to +150

°C

Visol
Vis02
Vis03

4500
3500
1500

Volts

RSJC

4.2

°cm

TL

260

°C

Rating

=

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC

=150°C

Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, Single phase, 60 Hz)
Operating Junction and Storage Temperature
RMS Isolation Voltage (t

=1 second, R.H.';; 30%, TA =25°C)(2)

Per Figure 3
Per Figure 4(1)
Per Figure 5

THERMAL CHARACTERISTICS
Maximum Thermal ReSistance, Junction to Case
Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 seconds
(1) UL Recognized mounting method is per Figure 4.
(2) Proper strike and creepage distance must be provided.
This document contains Information on a new product. SpecifIcatIOns and Information are subject to change Without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

4-76

Rectifier Device Data

MURF820

ELECTRICAL CHARACTERISTICS
Characteristic

Symbol

Maximum Instantaneous Forward Voltage (3)
(iF B.O Amp, TC 150'C)
(iF B.O Amp, T C 25'C)

vF

Maximum Instantaneous Reverse Current (3)
(Rated de Voltage, TC 150'C)
(Rated de Voltage, T C 25'C)

iR

Maximum Reverse Recovery Time
(IF 1.0 Amp, di/dt 50 Amp/~s)
(IF 0.5 Amp, iR 1.0 Amp, IREC

trr

=
=

=
=

=

=

Unit
Volts

0.895
0.975

=
=

=
=

Max

~
250
5.0
ns
35
25

=0.25 Amp)

(3) Pulse Test: Pulse Width = 300 ~s, Duty Cycle S2.0%.

iE

!

100

..

10K

50

!z
w

a:
a:
:::l
'-'
~
~

..... :..--

20
/

10

«1.0K
~ 400

~

/"

~

5.0
2.0

~
fa
z

1.0
0.3

'"~

0.10.2

i5

40

TJ = 25'C

'-'
W

10

a:

2.0 f - 1.0
O. 4

en

~

1OO'C 1

a:

i5
:z:

100

:::l

a:

f2

I

1
0.6
0.8
1.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. typical Forward Voltage

Rectifier Device Data

TJ = 100'C
25'C

....-r

O. 1
0.04

I
0.4

f--

1.2

0.0 1 0

20

40

-

~

60
80 100 120 140 160
VR. REVERSE VOLTAGE (VOLTS)

180

Figure 2. Typical Reverse Leakage Current"

4-77

200

MURF820

TEST CONDITIONS FOR ISOLATION TESTS'
CLIP

MOUNTED
FULLY ISOLATED
0.107" MIN

Figure 3. Clip Mounting Position
for Isolation Test Number 1

Figure 4. Clip Mounting Position
for Isolation Test Number 2

Figure 5. Screw Mounting Position
for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION"
4-40 SCREW

-.---.---

"'~HEATSINK
-<

~,

~;--

~ COMPRESSION WASHER

I

IT

ce

,

Jfi:
I

~,

~

-.?'

~:-

-:~:;;:;;~ HEATSINK

NUT

6a. Screw-Mounted

6b. Clip-Mounted
Figure 6. Typical Mounting Techniques

Laboratorytesls on a limited number of samples indicate, when using the screw and compression washer mountmg technrque, a screw torque of 6to 8 in • Ibs Is sufficient to provide
maximum power dissipation capability, The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20io • Ibs wilt cause the plastic to crack around the mounting
hole, resulting in a loss of isolation capability.
Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in • Ibs without adversely affecting the package. However. in order to positively ensure
the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in • Ibs of mounting torque under any mounting conditions.
**For more Infonnation about mounting power semiconductors see Application Note AN1 040.

4-78

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Advance Information
SWITCHMODETM
Power Rectifiers

MURF1620CT
Motorola Preferred Device

Designed for use in switching power supplies, inverters and as free wheeling
diodes, these state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

Ultrafast 35 Nanosecond Recovery Times
150a C Operating Junction Temperature
Epoxy Meets UL94, Vo @ 1/8"
High Temperature Glass Passivated Junction
Low Leakage Specified @ 150a C Case Temperature
Current Derating @ Both Case and Ambient Temperatures
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369(1)

2~::

Mechanical Characteristics
• Case: Epoxy, MOlded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260 a C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: U1620

ULTRAFAST RECTIFIERS
16 AMPERES
and 200 VOLTS

:

•

CASE 221 D-02
ISOLATED TO-220

MAXIMUM RATINGS, PER LEG
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated VR), T C = 150a C

Value

Unit

VRRM
VRWM
VR

200

Volts

IF(AV)

8
16

Amps

IFM

16

Amps

IFSM

100

Amps

TJ, Tstg

-65to+150

ac

VisOl
Vis02
Vis03

4500
3500
1500

Volts

R6JC

4.2

°C/W

TL

260

°C

Total Device

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), T C = 150a C
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)
Operating Junction and Storage Temperature
RMS Isolation Voltage (t = 1 second, R.H. :S 30%, TA = 25a C)(2)

Symbol

Per Figure 3
Per Figure 4(1)
Per Figure 5

THERMAL CHARACTERISTICS, PER LEG
Maximum Thermal Resistance, Junction to Case
Lead Temperature for Soldering
Purposes: 1/8" from the Case for 5 seconds
(1) UL Recognized mounting method IS per Figure 4.
(2) Proper strike and creepage distance must be provided.
This document contains information on a new product. SpeCIfications and information are subject to change without notice
Preferred deVices are Motorola recommended choices for future use and best overall value.

Rev 1

Rectifier Device Data

4-79

MURF1620CT

ELECTRICAL CHARACTERISTICS, PER LEG
Rating

Symbol

Maximum Instantaneous Forward Voltage (3)
(iF 8.0 Amp, T C 150'C)
(iF B.O Amp, T C 25'C)

vF

Maximum Instantaneous Reverse Current (3)
(Rated de Voltage, TC 150'C)
(Raled de Voltage, TC 25'C)

iR.

Maximum Reverse Recovery Time
(IF 1.0 Amp, dVdl 50 Amp/lls)
(IF 0.5 Amp, iR 1.0 Amp, IREC

Irr

=
=

=
=

=

=

Unit
Volts

0.895
0.975

=
=

=
=

Value

IJ.A
250
5.0
ns

35

=0.25 Amp)

25

(3) Pulse Test: Pulse Width = 300 j.lS, Duty Cycle S 2.0%

•

~ 100

10 K

~ 50

I ~~
@~~

..",.

_

:.;-

./ ./

100
40

5.0

10

2.0
en 1.0

TJ = 100'C

@

2.0
1.0
0.4

25'C

z

~
15

0.3

~ 0.1
.~

0.2

0.4

0.6
0.6
1.0
INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage, Per Leg

--

=

TJ=100'C
25'C

O. 1

I

vf,

4-80

1.0K

~ 400

0.04
1.2

0.01

20

40

-

....

60
80 100 120 140 160
VR, REVERSE VOLTAGE (VOLTS)

180 200

Figure 2. Typical Reverse Current, Per Leg<

Rectifier Device Data

MURF1620CT

TEST CONDITIONS FOR ISOLATION TESTSCLIP

MOUNTED
FULLY ISOLATED
LEADS

HEATSINK
O.110"MIN

Figure 3. Clip Mounting Position
for Isolation Test Number 1

Figure 4. Clip Mounting Position
for Isolation Test Number 2

Figure 5. Screw Mounting Position
for Isolation Test Number 3

• Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION--

•

4-40 SCREW

/'
//'

--~HEATSINK
<:

~-

~.>

~ COMPRESSION WASHER

I

NUT

6a. Screw-Mounted
Figure 6. Typical Mounting Techniques
laboratory tests on a limited number of samples indicate, when uSing the screw and compression washer mounting technique, a screw torque of 6 to 8 in • Ibs IS sufficient to provide
maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over bme and dunng large temperature excursions.
Destructive laboratory tests show that using a hex head 4-40 screw, without washers. and applYing a torque in excess of 20 In • Ibs will cause the plastic to crack around the mounting
hole, resulting In a loss of isolation capability.
Additional tests on slotted 4-40 screws mdicate that the screw slot fails between 15 to 20 In • Ibs without adversely affectmg the package. However, In order to positively ensure
the package integrity of the fully isolated deVice, Motorola does not ,recommend exceedmg 10 m '.lbS of mounting torque under any mounting conditions.
"For more infonnallon about mounting power semiconductors see ApplicatIOn Note AN1040.

Rectifier Device Data

4-81

,

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Advance Information
SWITCHMODETM

MURF1660CT
Motorola Preferred Device

Power Rectifiers
Designed for use in switching power supplies, inverters and as free wheeling
diodes, these state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

•

Ultrafast 60 Nanosecond Recovery limes
150°C Operating Junction Temperature
Epoxy Meets UL94, Vo @ 1/8"
High Temperature Glass Passivated Junction
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369(1)

2~::

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature lor Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: U1660

ULTRAFAST RECTIFIERS
16 AMPERES
600 VOLTS

:
CASE 2210-02
ISOLATED TO-220

MAXIMUM RATINGS, PER LEG
Rating
Peak Repetitive Revorse Voltage
Working Peak Rovorse Voltage
DC Blocking Voitnno
Average Rectified Forwmd Current
Total Device, (Rnled VR), TC = 150°C

Per Diode
Per Device

Peak Repetitive Forwmd Current
(Rated VR, Square Wave, 20 kHz), T C = 150°C
Non-repetitive Peak Surgo Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)
Operating Junction and Storage Temperature
RMS Isolation Voltage (t = 1 second, R.H. ,; 30%, TA = 25°C)(2)

Per Figure 3
Per Figure 4(1)
Per Figure 5

Symbol

Value

Unit

VRRM
VRWM
VR

600

Volts

8

Amps

IF(AV)

16
IFM

16

Amps

IFSM

100

Amps

TJ, Tstg

-65 to +150

°c

Visol
Vis02
Vis03

4500
3500
1500

Volts

RSJC

3.0

°CIW

lL

260

°C

THERMAL CHARACTERISTICS, PER LEG
Maximum Thermal Resistance, Junction to Case
Lead Temperature for Soldering
Purposes: 1/8" from Case for 5 Seconds
(1) UL Recognized mounting method is per Figure 4.
(2) Proper Strike and creepage distnnco must be provided.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

4-82

Rectifier Device Data

MURF1660CT

ELECTRICAL CHARACTERISTICS, PER LEG
Symbol

Rating
Maximum Instantaneous Forward Voltage (3)
(iF 8.0 Amp, TC 150'C)
(iF 8.0 Amp, TC 25'C)

vF

Maximum Instantaneous Reverse Current (3)
(Rated de Voltage, T C 150'C)
(Rated de Voltage, T C 25'C)

iR

Maximum Reverse Recovery lime
(IF 1.0 Amp, di/dt 50 Amp/!'s)
(IF 0.5 Amp, iR 1.0 Amp, IREC

trr

=
=

=
=

=

=

(3) Pulse Test: Pulse Width

ns
60
50

=0.25 Amp)

ff

•

10K
TJ -15O'C

!z
w

g

~
500
10

=300 !,S, Duly Cycle S 2.0%.

::;; 100
~ 50

12
::>

Unit
Volts

1.20
1.50

=
=

=
=

Value

~

20

10o'C "- . /

10

"

25'C

,......
=1=

<" 1.0K
~

100

-

TJ = 150'C

c::

~
c::

10

100'C

f2

U)

::>

1.0

53
~

z
~

0.5

0.2
~ 0.1
.~
0.4

o. 1

V

/

--

25'C

U)

./

0.6

0.8
1.0
1.2
1.4
INSTANTANEOUS VOLTAGE (V) .

1.6

vf;

Figure 1. Typical Forward Voltage, Per Leg

Rectifier Device Data

1.8

0.01100

200

300

400

500

600

VR, REVERSE VOLTAGE (V)
Figure 2. Typical Reverse Current, Per Leg>

4-83

,

MURF1660CT

TEST CONDITIONS FOR ISOLATION TESTS·
CLIP

MOUNTED
FULLY ISOLATED

Figure 3. Clip Mounting Position
for Isolation Test Number 1

Figure 4. Clip Mounting Position
for Isolation Test Number 2

Figure 5. Screw Mounting Position
for Isolation Test Number 3

* Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION··

•

4-40 SCREW

~

-~

~,
"

~.;,-

~

'~HEATSINK
~ COMPRESSION WASHER
,

n'"

~
I

~,

~

-~

~.;HEATSINK

':~;;;~

NUT

6a. Screw-Mounted

6b. Clip-Mounted
Figure 6. Typical Mounting Techniques

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting techmque, a screw torque 016 to 8 in • Ibs is sufficient to provide
maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4-40screw, without washers, and applying a torque in excess of 20 in • Ibs will cause the plastic to crack around the mounting
hole, resulting in a loss of Isolation capability.
Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in • Ibs without adversely affecting the package. However, in order to positively ensure
the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in 'Ibs of mounting torque under any mounting conditions.

hFor more Information about mounting power semiconductors see Application Note AN1040.

4-84

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MUR3020WT
MUR3040WT
MUR3060WT

Switch mode Power Rectifiers
· .. designed for use in switching power supplies, inverters and as free
wheeling diodes, these state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•
•

Motorola preferred devices

Ultrafast 35 and 60 Nanosecond Recovery Time
175°C Operating Junction Temperature
Popular TO-247 Package
High Voltage Capability to 600 Volts
Low Forward Drop
Low Leakage Specified @ 150°C Case Temperature
Current Derating Specified @ Both Case and Ambient Temperatures
Epoxy Meets UL94V-O @ 1/8"
High Temperature Glass Passivated Junction

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max.
for 10 Seconds
• Shipped 30 units per plastic tube
• Marking: U3020, U3040, U3060

I

ULTRAFAST RECTIFIERS
30 AMPERES
200-400-600 VOLTS

"

::r"

~_~S_fr_;_3~_~_~_-:_3

I'--___

_ _. _ J

MAXIMUM RATINGS, PER LEG
Rating

Symbol

MUR3020WT

MUR3040WT

MUR3060WT

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

200

400

600

Volts

Average Rectified Forward Current @ 145°C

IF(AV)

15
30

Amps

IFM

30

Amps

Total Device
Peak Repetitive Surge Current
(Rated VR, Square Wave, 20 kHz, TC; 145°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions,
hallwave, single phase, 60 Hz)
Operating Junction and Storage Temperature

IFSM

150

200

-65to +175

TJ, Tstg

°C

THERMAL CHARACTERISTICS, PER LEG
1.5
40

Maximum Thermal Resistance - Junction to Case
- Junction to Ambient

ELECTRICAL CHARACTERISTICS, PER LEG
Maximum Instantaneous Forward Voltage (1)
(IF; 15 Amp, TC; 150°C)
(IF; 15 Amp, TC; 25°C)

VF

Maximum Instantaneous Reverse Current (1)
(Rated DC Voltage, TJ ; 150°C)
(Rated DC Voltage, T J ; 25°C)

iR

Maximum Reverse Recovery Time
(iF; 1.0 A, di/dt ; 50 Amps/!,s)

trr

(1) Pulse Test: Pulse Width = 300 IJ,S, Duty Cycle ~2.0%.

Volts
0.85
1.05

I

1.12
1.25

1.4
1.7
~A

500
10
35

I

1000
10
60

ns

Preferred deVices are Motorola recommended chOices for future use and best overall value.

Rev 1

Rectifier Device Data

4-85

•

MUR3020WT, MUR3040WT, MUR3060WT

---------------------------------MUR3020WT--------------------------------100
50
20
10

100

p- -

TJ = 150°C

100°C -

...1-

f

50

/

30

'"

/

/

./

25°C

./

/

•

I

I I

II

I

Z

I II
I I

Ii

-

0.2

0.1

0.2

/

I

~

16

!

14

I-

t5

a:
a:

12

g

10

a:

60
80 100 120 140 160
VR. REVERSE VOLTAGE (VOLTS)

"'- ........

~w

1.4

1.6

fo-- ~d~

I

""""C

•/

~

RATED VOLTAGE APPLIED

~

0;-

~

150

r-...
SQUARE WAVE' r--"...

14

0

12

c;;

10

~
CJ

180

a:
w
:;:
0

I'...'

:::--

160
170
TC. CASE TEMPERATURE (OC)

16

~

~
D-

"'"-...........

:"'>.

,

~

z

RaJA =15°CiW AS OBTAINED USING A SMALL FINNED
HEAT SINK.
-

.........

i:-= I;;;;;;;:c de

r\.'\.

Figure 3. Current Derating, Case (Per Leg)

I

""

de

4

~

0.6
0.8
1
1.2
vF. INSTANTANEOUS VOLTAGE (VOLTS)

wT:/E

200

'"
r-...." ~

'"

12
w

I

- r-...I["...

180

SQUARE WAVE'"
'\

Figure 1. Typical Forward Voltage (Per Leg)

DW

SQUARE WAVE

(!l

~

~
RaJA =40°CiW ~ AS OBTAINED IN FREE AIR
......::::::: .~
WITH NO HEAT SINK.
~
20
40
60
80
100 120 140 160 180
TA. AMBIENTTEMPERATURE (OC)

--

Figure 4. Current Derating, Ambient (Per Leg)

4--86

40

:::>

i

SQUARE

20

Figure 2. Typical Reverse Current (Per Leg)

I

0.4

..--

0.1
0.05
0.02

a:

I I

II II

0.2

;€

II II

0.3

0.5

0.Q1 0

I

II

I I

-=
-

<.:>

w
en
a:
w
>
w
a:

I

0.5

25°C

W

a:
a:

I

I

=

:::>

/ / /
I

100°C

S

l-

/j I / j

20

<"
::l

TJ = 150°C ~

""a:w
~

200

~

D-

2

4
6
8
10
12
14
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Power Dissipation (Per Leg)

Rectifier Device Data

16

MUR3020WT, MUR3040WT, MUR3060WT

-----------------MUR3040WT - - - - - - - - - - - - - - - - 100

50
100°C

TJ=15°C

30

'"25"1:-

/ / /
/ / /

20

I / /

«:l.
>zw
a:
a:
=>
u
w
en
a:
w
>
w
c::
ri:
-

I I

100
50
20
10

0.2
./

0.1
0.05
0.02
0.01 0

50

100

150

200

I

........
.......

I II

LI

'"L"\.

I0.6

0.4

400

450

500

de

I I

1
O. 0.2

350

SQUARE WAV"'\

I

I

o. 2

,'""\

I

J

o. 3

300

Figure 7. Typit:al Reverse Current (Per Leg)

I

5

250

VR. REVERSE VOLTAGE (VOLTS)

I

II

1

100°C: 25°C===:

1
0.5

I 1/ I
I
I

I I

T = 150°C

~\.
~

RA EDVOL AGEAP LIED
0.8

1

1.2

1.4

1.6
150

Figure 6. Typical Forward Voltage (Per Leg)

,

~

vf', INSTANTANEOUS VOLTAGE (VOLTS)

160
170
TC. CASE TEMPERATURE (OC)

180

Figure 8. Current Derating, Case (Per Leg)

-

~~
r"....

~uu ~HEW

=

i""o..

I

"'j

I;;;;:: e

.......

SQUAREW VE- ~

"

"-

14

Q

~

iZ

(RESISTIVE-INDUCTIVE LOAD)
(CAPACITIVE LOAD)

lEK,

fEK = 1t
AV

:F-----jl<---+-7"'1

=5

12
~
~--~~~-+-~--+
10
101-----J---+---j-r--.joL· /-1--"""4-----1----1

is

ffi

~

~

1'0... .......

::--..

~

w

-

~
ReJ~ = 40°CIW ' / / ' ~ .~
AS OBTAINED IN FREE AIR
WITH NO HEAT SINK.
~
20
40
60
80
100 120 140
160 180
TA. AMBIENTTEMPERATURE (OC)

Figure 9. Current Derating, Ambient (Per Leg)

Rectifier Device Data

16.-----------------~-------r~-r---,

~
Z

........

">.

~

~

RaJA = 15°CIW ~S OBTAINED 'j USING A SMALL FINNED
-~
HEAT SINK.
-

""
wE

I

~w

::c
~

200

u:-

n.

2

10

12

14

IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 10. Power Dissipation (Per Leg)

4-87

16

MUR3020WT, MUR3040WT, MUR3060WT

- - - - - - - - - - - - - - - - MUR3060WT - . . . . , - - - - - - - - - - - - - - 100

..-

50

::t.

.,.

TJ=~o

30
20

'"
;1'

/

-

!z
w
a:
a:

/

TJ = 150°C

20
10
5

100°C

::J

, / , / ,""oC
,/
o

4

200
100
50

(.)

W

en
a:

c

w

0.5

sF

0.2
0.1

~
a:

-

0.05
0.Ol50

/

•

I

/

I

f£

16

~
!z

14

w

~

I

I

I I

I

II

II

0.3

II II

O. 1

0.2

0.4

6

12

I
I
~

10

~

Li:"

0.6
0.8
1
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)

de

-r-....

""'

SQUAREW~

4

de

r--

3

i-1

'<

1.4

1.6

FROM A SMAll T0-220
HEAT SINK.

-

600

650

f'...:

~

~" ~

RAT

0
140

oVOL!

"'

~

GEAPP lED

~

'\

lW

ISO

1M

180

16

~

14

a
~
D.

12

de

z

c;;
en 10
15
a:
w·

~

~

D.
W

Cl

~
w

r-::::

Figure 14. Current Derating, Ambient (Per Leg)

4-88

550

~ ~e

10

en

~

N 1""""-

t>.

2

500

Figure 13. Current Derating, Case (Per Leg)

R~A = 16bCIW ~S OBTAINED I

1""""- r-....
r-...."'

450

TC, CASE TEMPERATURE (OC)

SQUARE WAvr-- ~
"'~
RaJA = sooCIW ~
~ ~
AS
OBTAINED
IN
FREE
AIR
~1
~~
Li:" 0 WITH NO HEAT SINK.
o 20 40 60 80 100 120 140 160 180
TA, AMBIENT TEMPERATURE (OC)

~

400

.........

~w
~
w
ac

I
1/

- r--..

..........

SQUA EWAV

Figure 11. Typical Forward Voltage (Per Leg)

en
D.
~

350

@
~

I

1
I I

0.2

300

Figure 12. Typical Reverse Current (Per Leg)

// /
I

250

VR, REVERSE VOLTAGE (VOLTS)

/ I /

0.5

200

/

25°C

ac

200

[u..
D.

4
6
8
10
12
14
IF(AV). AVERAGE FORWARD CURRENT (AMPS)

Figure 15. Power Dissipation (Per Leg)

Rectifier Device Data

16

MUR3020WT, MUR3040WT, MUR3060WT

6"

I!;l

i

D=0.5

~ 0.5
w
u
~ 0.2

-

en

ffi 0.1
a:
;;;!
~ 0.05

w

:I:

tt-

iD

u;

:z

~

?

0.02

..,.,.. ........

0.01
0.01

... _-....

10.\

:.L
0.05
.u~

~ I G

0.02

0.05

-

~ :::::;;01"'"

I--

~~~

LSE

0.1

p(Pk)lSLfL

DUTY CYCLE, D = 11n2

0.2

I II 10

0.5

ZruC(I) = r(l) RruC
RruC = 1.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME ATT1
TJ(pk) - TC = P(pk) ZruC(t)

11111
20

50

100

200

500

lK

1, TIME (ms)

Figure 16. Thermal Response
lK

..
I

500

J.: 2 °

~

~
w

200

u
:z
~ 100
U
~ 50

r-"'"-

--r-

~

5

c5
20
5
10
20
VR, REVERSE VOLTAGE (VOLTS)

50

100

Figure 17. Typical Capacitance (Per Leg)

Rectifier Device Data

4-89

MOTOROLA

-

SEMICONDUCTOR
TECHNICAL
DATA

------------MUR3020PT
MUR3040PT
MUR3060PT

Switch mode Power Rectifiers
· .. designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following features:
•
•
•
•
•
•
•
•

MUR3020PT and MUR3060PT
are Motorola Preferred Devices

Ultrafast 35 and 60 Nanosecond Recovery lime
175°C Operating Junction Temperature
High Voltage Capability to 600 Volts
Low Forward Drop
Low Leakage Specified @ 150°C Case Temperature
Current Derating Specified @ Both Case and Ambient Temperatures
Epoxy Meets UL94, Vo @ 1/8"
High Temperature Glass Passivated Junction

ULTRAFAST RECTIFIERS
30 AMPERES
20D-40D-600 VOLTS

::r.

I

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 30 units per plastic tube
• Marking: U3020, U3040, U3060

~

1
23

I

4

CASE 3400-01
(TO-218AC)
STYLE 2

MAXIMUM RATINGS
MUR
Rating

Symbol

3020PT

3040PT

3060PT

Unit

Peak Repelitivo Rovmso Voltage
Working Ponk Rovmso Voltage
DC Blocking Voltage

VRRM
VRWM
VR

200

400

600

Volts

Avorage Rectified Forward Current (Rated VR)
Per Leg
Per Device

IF(AV)

Peak Rectified Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz), TC = 150°C

IFRM

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave,
single phase, 60 Hz) Per Leg

IFSM

Operating Junction Temperature and
Storage Temperature

15

30

15
30

TC=150'C

TC=
145'C

30

30
@TC=150'C

Amps

@TC=145°C
150

200

Amps

'c

-65 to +175

TJ, Tstg

Amps

THERMAL CHARACTERISTICS PER DIODE LEG
Maximum Thermal Resistance, Junction to Case
Junction to Ambient

1.5
40

ELECTRICAL CHARACTERISTICS PER DIODE LEG
Maximum Instantaneous Forward Voltage (1)
(iF = 15 Amps, TC = 150°C)
(iF = 15 Amps, TC = 25°C)

vF

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage, T C = 150'C)
(Rated de Voltage, T C = 25°C)

iR

Maximum Reverse Recovery TIme
(IF = 1 Amp, di/dt = 50 Amps/liS)

trr

Volts
0.85
1.05

1.12
1.25

1.2
1.5

IlA
500
10
35

1000
10
60

ns

(1) Pulse Test: Pulse Width = 300 liS, Duty Cycle S 2%
Rev 3

4-90

Rectifier Device Data

MUR3020PT, MUR3040PT, MUR3060PT
----------------------------------- MUR3020PT -----------------------------------

100

100
150"C

TJ

.;

V

50

V

/

100"S+25"C
/'

/

~

V /

30

a'"

/ VI

20

1

100"C

5
I

0.5

25"C ~

~ 0.2
S 0.1

V II

0.05
0.02

om

o

II

20

40

60
80
100 120 140
160
VR, REVERSE VOLTAGE IVOLTS)

/

//

II I
J II
I II I

Ie

I

1/

0.2

I I

II /

0.1
0.2

14

~

12

ao

10

~

J

~

/

'"ffi

2

II

0.6
0.8
I
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)

l'..

I

or-- ....... I ......

SQUAREWA~
I

d~

1.4

1.6

J!-

o

, '"

6BTAIN~D--

---

"""< ........

"......... ,

RATED VOLTAGE APPLIED

~

'\

0
150

160
170
TC, CASE TEMPERATURE (OC)

180

-

16r---r---.---.---.---'---'---.---~

~

141---+----+---

(RESISTIVE LOAD) ,'PK

AV

~

12

~

10r---T---;----r---r~-i~~~~+-~

l!l
'"

(CAPACITIVE LOAD)

:~~

=

w

........

~
~
RIJJA - 4O°cm-- ;:-...
.....;;:::::
AS OBTAINED IN FREE AIR
WITH NO HEAT SINK.
40
M
M
~
~
20

'"ffi

--

."""-

~

~

~

4 1---+--H5jC,~"""'''--+-----+---f---+----l

~

~

TA, AMBIENT TEMPERATURE (OC)

Figure 4. Current Derating. Ambient (Per Leg)

Rectifier Device Data

\"\
'\

~

.....

m

de

"'" .'"

4

140

~

~

=

o

......

Figure 3. Current Derating. Case (Per Leg)

I

)IJJA 15°c!w AS
......... / USING A SMALL FINNED
)(
HEAT SINK.

I'--..
SQUARE WAVE:- I-....

•

SQUARE WAVE""-..'\

~
~ 2.0

,de

200

.......

8

Figure 1. Typical Forward Voltage (Per Leg)

4

.......

w

I

0.4

16

~

:2

JJ

I

180

Figure 2. Typical Reverse Current (Per Leg)

II

0.3

r==

'0

~

ffi

/ /
/

0.5

150"C~

TJ

50
20

~

~

4

6

8

10

12

14

'FIAV). AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Power Dissipation (Per Leg)

4--91

16

MUR3020PT, MUR3040PT, MUR3060PT

--------------------------------- MUR3MOPT---------------------------------

100

100

50
100'C

TJ = 150'C

30

f- -25'C

/

10

II

25'C=

~

:::>

~

1/1/ /
II I

0.5

""~

0.2
~ O. 1
- 0.05

0.02
0.0 1

I

o

I

I

0.3

0.2

I

t-

iI_

~

12

.-

""~

10

:it

I

.1

......

I

"'C

d~

1.4

1.6

~

r-

.IROJA
/

,

~

6BTAIN~D-

=

15'c\w AS
USING A SMALL FINNED
HEAT SINK.

~

"

o

140

RATED VOLTAGE APPLIED

~

"\
150

100
170
TC. CASE TEMPERATURE I'C)

180

E'
~
is
~
~

16r---------------~------_,r_~r___,

IRESISTIVE·INDUCTIVE
14
12 ICAPACITIVE
10~--+---4----h~~~~~~~--+-~

c

""- .......

'""

~'" 6~--+--7~~~L-~~~----~--+-~
TJ = 125'C

.... ~

:::--.

'"

ffi

:it

."'....."

~

~

~

;F
~

Figure 9. Current Derating. Ambient (Per Leg)

4-92

~

Figure 8. Current Derating, Case (Per' Leg)

I

SQUARE WAVE -~
~
R6JA = 4O'CIW AS OBTAINED IN FREE AIR
I"":::
o WITH NO HEAT SINK.
W 40 00 00 ~ m ~
TA. AMBIENT TEMPERATURE I'C)

=

m

de

"\

~

,de

SQUAREWA~

~

" .""- ,'\.

w

Figure 6. Typical Forward Voltage (Per Leg)

....

r-.."-

~

0.6
0.8
1.0
1.2
vF. INSTANTANEOUS VOLTAGE IVOLTSI

I"""- i""'o....l

~

SQUARE WAVE"""-'\

~ 2.0

J"....

~

"- ........ "'-

12

...

,;;;::

0.4

~

16

~ 14

IIII

//

0.1
0.2

~

j

I

I

~

Figure 7. Typical Reverse Current (Per Leg)

I

il

~

/

I

I II

50

VR. REVERSE VOLTAGE (VOLTSI

I II j
/

I I
II II

---'

100'C-

10

/ /

II

.~

~
u

V/ /

20

1

150'C

TJ

50
20

~

4
6
8
10
12
IFIAV). AVERAGE FORWARD CURRENT lAMPS)

14

Figure·10. Power Dissipation (Per Leg)

Rectifier Device Data

16

MUR3020PT, MUR3040PT, MUR3060PT

--------------------------------- MUR3060PT ---------------------------------

100

100
100

50

50
20
10

TJ

30
20

V
/V V

10
/

/

/

=....150°C

V ~ ~OC

v 4c

§

150°C

100°C

5

2
a:
=>
1
u
0,5
-

TJ

~

~

/

~
B
~
~
~
VR, REVERSE VOLTAGE (VOLTSI

~

~

B

Figure 12. Typical Reverse Current

/ / II
/ / rl
.~

I

0,5

0,2

0,2

'"~

/

I /

0,1

a:

§u 10

II

II

II

~

I

0,4

8

1:2

""ffi

II

II I

14

~ 12

I

I I

0,3

16

~
~

4

:it

........

.........

I'-... ~
SQUARE

WAV~"- "-

1'-."-'\.

~
~

RATED VOLTAGE APPLIED

-'- 2

O,S
o,a
1
1.2
1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)

1.6

140

Figure 11. Typical Forward Voltage

~

'\

~
~o

150
160
TC, CASE TEMPERATURE (OC)

170

laO

Figure 13. Current Derating, Case

~
::;;
:;:
>-

i

=>

u

'"a:
~

0
9

a~

~

:it

1

......... ~

7 SQUARE WAV"'E'<
S

_ 1S

R8J~ = 1S!CIW A~ OBTAiNED FROM A SMALL TO-220
HEAT SINK

""""
"" '" ",,-

~~

-

z

'"~

f'.....

~

SQUAREWAV~ t--

t--

~
1 ROJA = SQoCIW
AS OBTAINED IN FREE AIR, NO HEAT SINK
~
0
20
40
60
ao
100 120 140 1S0 lao
TA, AMBIENT TEMPERATURE (OCI

a

~

f=:::::

Figure 14. Current Derating, Ambient

Rectifier Device Data

a:

~

"- ~

r-::: t:.....

12
10

~
""""ffi
:it

"-

14

8i
~

1'..

5

f:2 4

""""ffi

............ de

.F

1S

200

Figure 15. Power Dissipation

4-93

•

MUR3020PT, MUR3040PT, MUR3060PT

o

~

1

~

o. 5

~
:;;.

0

0.5

-

~

z
~ O. 2

~

0\

en

~ f-

~ O. 1

~

~

t::: I-

~
I-'""

I::: ~ .....

VI-'

tJUl
-tl-j

ffi 0.05

i=
!Z

ill
0.02 ~
z

~ 00 1

:j§

I--""

0.Q1

V

V

SI~~L~ PULSE

DUTY CYCL~~ 0 = 11112 - TJlpki - TC = Plpkl ZruCItl

0.05

II II

IIII

IIIII
0.02

ZruclII = rlt! R8JC
Rruc = 1.5"C/W MAX
DCURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME ATTI

Plpkl

0.01

0.1

0.2

0.5

2

20

10

50

100

200

500

t. TIME Im,l

Figure 16. Thermal Response

•

1K

500

r-~ 200

~ 100

-

TJ

25"C

r-r-

r- r-

~

u
~

5

50
20
10
1

5
10
20
VR. REVERSE VOLTAGE IVOLTSI

50

100

Figure 17. Typical Capacitance (Per Leg)

4--94

Rectifier Device Data

1K

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MUR3040

SWITCHMODE
Power Rectifiers

Motorola Preferred Device

· .. designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following features:
•
•
•
•
•

ULTRAFAST RECTIFIERS
30 AMPERES
400 VOLTS

Ultrafast 100 Nanosecond Recovery Time
175°C Operating Junction Temperature
High Voltage Capability to 400 Volts
Low Forward Voltage Drop
High Temperature Glass Passivated Junction

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
3' ~ 4
• Shipped 30 units per plastic tube
• Marking: U3040

~
1
3

4

CASE 340E-01
STYLE 1

MAXIMUM RAT1NGS
Max

Rating

Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

400

Average Rectified Forward Current
TC = 700C

IF(AV)

30

Amps

IFRM

30

Amps

IFSM

300

Amps

TJ. Tstg

-65to +175

·C

Peak Repetitive Forward Current
(Rated VR Square Wave 20 kHz) TC

= 1500c

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave. single phase. 60 Hz)
Operating Junction Temperature and
Storage Temperature

Unit
Volts

THERMAL CHARACTERISTICS
Thermal Resistance. Junction to Case

ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage
(IF = 30 Amp. TC = l00"C)
(IF = 30 Amp. TC = 25·C)

vF

Instantaneous Reverse Current
(Rated dc Voltage. TC = l00"C)
(Rated dc Voltage. TC = 25"C)

iR

Reverse Recovery Time
(IF = 1.0 Amp dlldt = 15 Amp/JotS

trr

Volts
1.4
1.5
6.0
35

mA
p.A

100

ns

Rev 2

Rectifier Device Data

4-95

•

MUR3040

TYPICAL ELECTRICAL CHARACTERISTICS i
100
15O"C

ie
::;;
$
I-

Z

==

//L

f--

1

w
a:
a:
u

I-

lllO'C
10

/ I

~

m

~

.!f.

a:

0.1

I I
0.1

~

-

a

I

a:

0.1

$:

I
M

U

19

U

1.5

13

0,01

50

100

VF.INSTANTANEOUS FORWARD VOLTAGE (V)

35

~

ffi

30 ~

25

g§ 20
::>

i

u

~ 15

~
I

I

~ 10

f2

o
140

!

"'i

,

I

I
150

i

I

:
I

iI

I

I ~dC I
I

I

I

i
I

!

i
i

I
I

160

I

'"

i'--

I

i",
170

Tc. CASE TEMPERATURE 1°C)

Figure 3. Current Derating. Case

4-96

f--

iI

""I

!

350

150
200
250
300
YR. REVERSE VOLTAGE (VOLTS)

400

Figure 2. Typical Reverse Current

Figure 1. Typical Forward Voltage

iL

===

25"C~

Z

lI:!
a:

f2

•

ie

100

:::E

::>

c

--

TJ - l5O'C::=

r--

25°C

/ / /'

10

1000

l00"C I

180

o

"" ~

IN FREE AIR
WITH NO HEATSINK

o

~

~

" i'--

de

~

60
60 ~ m ~
TA. AMBIENT TEMPERATURE IOC)

~

~

~

~

Figure 4. Current Derating. Ambient

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MUR3080

Advance Information
SWITCHMODETM Power Rectifier

Motorola Preferred Device

· .. designed for use in switching power supplies, inverters and as free
wheeling diodes, these state-of-the-art devices have the following features:
•

ULTRAFAST RECTIFIERS
30 AMPERES
600-800 VOLTS

Ultrafast 75 ns (Typ) Soft Recovery Time

• 175°C Operating Junction Temperature
• High Voltage Capability to 800 Volts
•

Low Forward Voltage Drop

•

High Temperature Glass Passivated Junction

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
•

Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable

•

Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Shipped 30 Units Per Plastic Tube
•

Marking: U3080
3

CASE 340E-Q1, STYLE 1

MAXIMUM RATINGS
Symbol

Max

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

800

Volts

Average Rectified Forward Current
(Rated VR) TC = 70°C

IF(AV)

30

Amps

Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 150°C

IFRM

30

Amps

Non Repetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

300

Amps

TJ

-65 to +175

°c

Tstg

-65 to +175

°c

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS
Thermal ReSistance, Junction to Case

1.0

ELECTRICAL CHARACTERISTICS (TYPICAL DATA)
Instantaneous Forward Voltage (1)
@ IF 30 Amps, TC = 25°C
@ IF 30 Amps, TC = 100°C

VF

Instantaneous Reverse Current (1)
@ Rated DC Voltage, T C 25°C
@ Rated DC Voltage, TC 100°C

IR

=
=

=
=

Reverse Recovery lime
IF = 1.0 Amp, VR = 30 V, dl/dt = 50 AIl'S

Volts
1.9
1.8

tRR

100
5.0

I'A
mA

110

ns

(1) Pulse Test: Pulse WIdth = 300 115, Duty Cycle" 2.0%
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

Rectifier Device Data

4-97

•

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

MUR6040

SWITCH MODE
Power Rectifiers

Motorola Preterred Devlca

· .. designed for use in switching power supplies, inverters and as free wheeling diodes, these
state-of-the-art devices have the following featu~es:
•
•
•
•
•

•

Ultrafast 100 Nanosecond Recovery Time
175°C Operating Junction Temperature
High Voltage Capability to 400 Volts
Low Forward Voltage Drop
High Temperature Glass Passivated Junction

Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 30 units per plastic tube
• Marking: U6040

13::J-04

ULTRAFAST RECTIFIERS
60 AMPERES
400 VOLTS

t
1
3

4

CASE 340E-Ot
STYLE t

MAXIMUM RATINGS
Max

Rating

Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

400

Average Rectified Forward Current
TC = 70°C

IF(AV}

60

Amps

IFRM

60

Amps

IFSM

600

Amps

TJ, Tstg

-6Sto +17S

·C

Peak Repetitive Forward Current
(Rated VR Square Wave 20 kHz} TC

= 1SO"C

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
hallwave, single phase, 60 Hz}
Operating Junction Temperature and
Storage Temperature

Unit
Volts

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage
(IF = 60 Amp, TC = 100·C}
(IF = 60 Amp, TC = 25·C}

VF

Instantaneous Reverse Current
(Rated de Voltage, TC = 100·C}
(Rated de Voltage, TC = 2S·C}

IR

Reverse Recovery Time
(IF = 1.0 Amp dl/dt = 15 Amp/p.s

trr

Volts
1.4
1.5
10
60

mA
p.A

100

ns

Rev 2

4--98

Rectifier Device Data

MUR6040

TYPICAL ELECTRICAL CHARACTERISTICS
100

1000

100·C

150·C=

TJ

150"C

~

7'

./

::;;;

~

....

10

/'
V25·C

in

~

~

15
a:
a:

~

'"

:::>
u

:::>
u

IE

~

(fj

a:

.>f.

/ /
0.1

0.3

==

25·C~

~

a:

0.1

100·C

--+-

10

~

/ /

~

100

0.1

5

/

0.5
0.7
0.9
1.1
1.3
VF. INSTANTANEOUS FORWARD VOLTAGE (V)

1.5

0,01 50

100

350

150
200
250
300
VR. REVERSE VOLTAGE (VOLTS)

400

Figure 2. Typical Reverse Current

Figure 1. Typical Forward Voltage

80
1>: 70
::;;;
~ 60

f--

~

!z

ll!50
a:

r-..

a 40
'"~30

~

.!? 10

o

120

~ r--....

de

~

~ 20

~

140
160
TC. CASE TEMPERATURE (·C)

~ r--....de
~
175

Figure 3. Current Derating. Case

Rectifier Device Data

i'-- r--....

o

IN FREE AIR
WITH NO HEATSINK

o m

40

50

80

~

rn

'"

~

r--....

~

~

m

TA. AMBIENT TEMPERATURE I·C)

Figure 4. Current Derating. Ambient

4-99

..

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Ultrafast Power Rectifiers

BYT230PIV-400M

Dual high voltage rectifiers ranging from 200 V to 400 V suited for Switch
Mode Power Supplies and other power converters.
•

Very Low Reverse Recovery Time

•

Very Low SWitching Losses

•

Low Noise Turn-Off SWitching

•

Insulated Package: ,
Insulating voltage = 2500 VRMS
Capacitance = 45 pF

• ~-

ULTRAFAST
,RECTIFIERS
60 AMPS
400 VOLTS

UL Recognized, File #E69369

Mechanical Characteristics
•

Case: Molded epoxy with isolated metal base

•

Weight: 28 g (approximately)

•

Finish: All External Suriaces Corrosion Resistant

•

Shipped 10 units per plastic tube

•

Marking: BYT230PIV-400M

SOT-227B, STYLE 3

MAXIMUM RATINGS
Symbol

Max

Unit

VRRM

400

V

IF(AV)

60
30

A

Peak Repetitive Forward Current, Per Diode
tp< IOI'S

IFRM

500

A

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

350

A

TJ

-40 to +150

°c

Tstg

-40 to +150

°c

Rating
Peak Repetitive Reverse Voltage
Average Rectified Current
TC = 75°C

Per Device
Per Diode

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS
Thermal ReSistance, Junction to Case

Per Diode
Per Device

1.5
0.8
0.1

Coupling

ELECTRICAL CHARACTERISTICS PER DIODE
Instantaneous Forward Voltage (1)
IF = 30 A, TC 25°C
IF = 30 A, TC 100°C

VF

Instantaneous Reverse Current (2)
VR 400 V, TC 25°C
VR 400 V, TC 100°C

IR

=
=

=
=

=
=

V
1.5
1.4
35
6

I'A
mA

=

(1) Pulse Test: Pulse Width 380 liS, Duty Cycle" 2%
(2) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 2%

Rev 1

4-100

Rectifier Device Data

BYT230PIV-400M

RECOVERY CHARACTERISTICS
Test Conditions

Symbol

IF = 1 A, VR = 30 V, dlF/dt = -15 AliJ.S
IF = 0.5 A, IR = 1 A, Irr= 0.25 A

t"

Typ

Max

Unit

-

100
50

ns

Typ

Max

Unit

-

75

TURN-OFF SWITCHING CHARACTERISTICS (without series inductance)
Test Conditions

Symbol

Vee = 200 V, IF = 30 A, TJ = 100·e, Lp < O.05I1H (See Figure 11)
dlF/dt = -120 Allis
dlF/dt = -240 AliJ.S

tlRM

50

dlF/dt = -120 AliJ.S
dlF/dt = -240 Allis

IRM

-

12

ns

9

A

-

TURN-OFF OVERVOLTAGE COEFFICIENT (with series inductance)
Test Conditions
TJ = 100·e, Vee = 60 V, IF= IF(AV)
dlF/dt = -30 Allis, Lp = 111H (See Figure 12)

Rectifier Device Data

Symbol
e

= VRP

Typ
3.3

Max

Unit

-

Vee

4-101

•

BYT230PIV-400M

60
55
oJ.50=0.2
50
~
/
/"
1
45
0=0.1
/i;=1
/
40
/
/ /"
~ 35
II
/
/
30
l--o=O.O~
~
/
./V
~ 25
V/ ~
--1TI20
//
15
po
V/h
10

1\

160
i----

V

t20

v.#

I....."""

o = tpIT

tp

25

30

15
20
IF(AV) (A)

10

60

~
-+I I--

~~

~:bw
\\ V.40W
1\\ \{' :><:::::30W

V ....

I

-IT l~IM

~

40

"

"'

........

35

0.4

0.2

Figure 1. Low Frequency Power Losses
versus Average Current

-

t:::"'-r< ::::::-.. i:::::
~ I-20W-

--I tp I--

o = tpIT

-

0.6

r--0.8

Figure 2. Peak Current versus Form Factor

120

"100

g
::;;

"'-

........

BO

IMI.YJJMi
Tp
I-

........

r--.

60

~

,

I"-....

, -I,

,

TJ = 100"C
Vreapplied < 0.5 VRRM

-........

-

II

0=0.5

40
20

0.41-+++HH+H~1"":Y"*f+lt--++t++++1t--+++t+1'H
I - 0=0.2
i/.:';
~ T I--

0.01

.02

.06 .08 0.1
1p(s)

0.01
tp (5)

Figure 3. Non-Repetitive Peak Surge Current
versus Overload Duration

Figure 4. Relative Variation of Thermal Impedance
Junction to Case versus Pulse Duration

.04

0.2

0.4 0.6 0.8 1

0.0001

2.5
TJ = 100"C
i,...--'V
MAXIMUM (90% CONFIOE~y .....
TJ = 25"C
u..

>

f,.--"f-""" _ ...~ ~

1.5

......... f,.--"_I::::=~rr-

~
o0

C'" ~

'"

20

TJ= 100"C -

TYr
40

0.001

~O% ~O~FI~E~~E I

800

TJ = 100"C

~ 600
cr

",

200

60
IF (A)

80

100

120

0.1

1000

if 400

Figure 5. Voltage Drop versus Forward Current

4-102

~~

0=0.1 - I IIIII
_ o=tpIT --I t I-MONOPULSE(o=O,~~oo) J UUllL J ~lLl

~-,~

o /'

o

~

-t1l~

0.2

o

~

~

10

20

V

.....

40

60 80 100
200
dlFfdt (AfI!5)

400 BOO 8001000

Figure 6. Recovery Charge versus dlF/dt

Rectifier Device Data

BYT230PIV-400M

I

1.5

\

30

100

----200

300

400

V 1./

V VTYP
V

10

~
20

500

40

60 80 100

200

400 600

1000

dlF/dt (Nils)

dlF/dt (NflS)

Figure 7. Recovery Time versus dlF/dt

Figure 8. Peak Reverse Current versus dlF/dt

25

I
20

./

15

..--

1.6

TJ~10006

1.4

90% CONFIDENCE

1.2

/

"*

./

10

0.8
0.6

./

/

/
V

V
MAXIMUM (90% CONFIDENCE)

20

"-

0.5

t~ l~O!cl

40

\

"'"

B:

50

I

\

~

>

I

IF = IF(AV)
TJ=100'C
90% CONFIDENCE -

0.4

100

200

300

400

I--

-~

/'

/

T~P-

/

~

I-- <... ORR

J

500

100

50

150

200

250

dIF/dt(NflS)

TJ (0C)

Figure 9. Peak Forward Voltage versus dlF/dt

Figure 10. Dynamic Parameters versus
Junction Temperature

-tJ
LC

Figure 11. Turn-Off Switching Characteristics
(Without series inductance)

Rectifier Device Data

UT

Lp

VCC

Figure 12. Turn-Off Switching Characteristics
(With series inductance)

4-103

a

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Ultrafast Power Rectifiers

BYT230PIV-1000M

Dual high voltage rectifiers suited for Switch mode Power Supplies and other
power converters.
•

Very Low Reverse Recovery Time

ULTRAFAST
RECTIFIERS

• Very Low Switching Losses
•

Low Noise Turn-Off Switching

•

Insulated Package:
Insulating voltage = 2500 VRMS
Capacitance 45 pF

60 AMPS
1000 VOLTS

=

• ~ - UL Recognized, File #E69369
Mechanical Characteristics

II

•

Case: Molded epoxy with isolated metal base

•

Weight: 28 g (approximately)

•

Finish: All External Surfaces Corrosion Resistant

•

Shipped 10 units per plastic tube

•

Marking: BYT230PIV-1000M

SOT-227B, STYLE 3

MAXIMUM RATINGS
Symbol

Max

Unit

VRRM

1000

V

IF(AV)

60
30

A

Peak Repetitive Forward Current, Per Diode
tp< 1Ol1S

IFRM

375

A

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

200

A

TJ

-40 to +150

°C

Tstg

-40 to +150

°C

Rating
Peak Repetitive Reverse Voltage
Average Rectified Current
TC = 55°C

Per Device
Per Diode

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

1.5

Per Diode
Per Device

0.8
0.1

Coupling

ELECTRICAL CHARACTERISTICS PER DIODE
Instantaneous Forward Voltage (1)
IF= 30 A, TC= 25°C
IF = 30 A, TC = 100°C

VF

Instantaneous Reverse Current (2)
VR = 1000 V, TC = 25°C
VR = 1000 V, TC = 100°C

IR

V
1.9

1.8
100
5

IlA
mA

(1) Pulse Test: Pulse Width = 380 liS, Duty Cycle S 2%
(2) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 2%

Rev 1

4-104

Rectifier Device Data

BYT230PIV-1000M

RECOVERY CHARACTERISTICS
Test Conditions
IF = 1 A, VR = 30 V, dlF/dt = -15 AiIlS
IF= 0.5 A, IR = 1 A, Irr= 0.25 A

Symbol

Typ

Max

Unit

I"

-

165
70

ns

Typ

Max

Unit

-

200

TURN-QFF SWITCHING CHARACTERISTICS (without series inductance)
Test Conditions

Symbol

Vee = 200 V, IF = 30 A, TJ = 100o e, Lp < 0.051lH (See Figure 11)
dlF/dl = -120 AiJlS
dlF/dt = -240 AiIlS

IIRM

ns
120

dlF/dt = -120 AiIlS
dlF/dt = -240 AiIlS

IRM

-

t9.5

-

A

22

Typ

Max

Unit

TURN-QFF OVERVOLTAGE COEFFICIENT (with series inductance)
Test Conditions
TJ = 100o e, Vee = 200 V, IF = IF(AV)
dlF/dt = -30 AiJlS, Lp = 5 IlH (See Figure 12)

Symbol
e

=

VRP
Vee

-

4.5

..
,

Rectifier Device Data

4-105

BYT230PIV-1000M

70
65
60
55
50
[ 45
40
~ 35
.F 30
25
20
15
10
5

I

I

0=0.05

I
I

I

/

/0=0.2././
0=1
./

200

../

160

1/

I

/
/

~

./
10

L

\

I-

80

~
o
--I I--

40

T

= tpIT

tp

25

30

15
20
IF(AV) (A)

\

-

'"

80

g
::iE

I~

......

Tp

M

r""-

I
0.4

~=IZ~(~~lh)
-I

~

~

~

-I""T'

I II

"')

0=0.2

I- Tease 100°C
20 I-f>400Hz
I- Vreapplied < 0.8 VRRM

0.2

.....
o

0.1
Tp (sec)

-ffi
::Hi

r-T-J
0=0.1

111111

0.01
tp (s)

0.001

1.5

-

k-""

\.,.....
I- TYP

:....::: ~

~ ~i
20

40

,

...- I--

........

- ..--.

-

--::::

TJINITIAL _
--25°C
--100°CI I I
80
100
120

Figure 5. Voltage Drop versus Forward Current

4-106

--I

\

V

2.5 f- 90% CONFIDENCE
I- TJ= 100°C

I'

........

~

~

o = tpIT
tp i-11111111 III II I
0.1

Figure 4. Relative Variation of Thermal Impedance
Junction to Case versus Pulse Duration

\

MAXIMUM (90% CONFIDENCE)
TJ=100°C

r-

~ MONOPULSE (0 = 0, T - =)

0.0001

Figure 3. Non-Repetitive Peak Surge Current
versus Overload Duration

.,.....

0.8

I

lo~ 6.~1

0.6
0.4

2.5

-,.....

0.6

IIIII

......

0.01

,....

RS

0.8

40

o

'-

Figure 2. Peak Current versus Form Factor

0=0.5

60

r--

P=20W- l -

---

o

IMr~ ~ ~

........

.......... .......... k
"""<

I
0.2

-

I

I• •1.
i'-L,P=40W

"<;

I\,

35

120
100

~IM=
/ P=60W

"'

1_

I

o= tpIT --I tp i-- -

".x....

\\

I

r-T-j

\

Figure 1. Low Frequency Power Losses
versus Average Current

•

-\P~90J

-

~ 120

-I

I

\

./

/

/
././
I /./ ~
/.1 ./.#
//L. ~

~

240

0=0.11 ~ 0=0.5 - ;

I
I

V

6'
~

0::
0::

V

1.5

i-"

0

V
L

0.5

V
o
10

~

20

50

100
dlF/dt (AI!,s)

200

500

1000

Figure 6. Recovery Charge versus dlF/dt

Rectifier Device Data

BYT230PIV-1 DOOM

1.5

50

1\

IFJF(AV) I
TJ = 100'C
90% CONFIDENCE

\

-

" - -.........

0.5

""'--

I

I

I

I-- TJ = 100'C
40

/

/

30

/

V
,I'

MAXIMUM (90% CONFIDENCE) /

20

i/

"'TYP

10

'-::::i--"
t-

100

200
dlF/dl (AlIlS)

300

400

20

Figure 7. Recovery Time versus dlF/dt

30

25 - TJ= 100'C

..... ,.....

20

~
it

V

10

/

200

500

1000

Figure 8. Peak Reverse Current versus dlFldt

...-

----

-TYP

•

./
.......: ;.....-"

'"

......

/'

15

>

100
dlF/dl (AlIlS)

1.5

90%ICONFI~ENCE

-

50

.....

/

0.5

IRM,.....

".

~

./

/oRR

/

/

/
100

200
dlF/dl (AlIlS)

300

400

50

a
Lc

Rectifier Device Data

150

Figure 10. Dynamic Parameters versus
Junction Temperature

Figure 9. Peak Forward Voltage versus dlF/dt

Figure 11. Turn-Off Switching Characteristics
(Without series inductance)

100

UT
Lp

VCC

Figure 12. Turn-Off Switching Characteristics
(With series inductance)

4-107

I

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Ultrafast Power Rectifiers

8YT261 PIV-400M

Dual high voltage rectifiers suited for Switchmode Power Supplies and other
power converters.

• Very Low Reverse Recovery Time
• Very Low Switching Losses
•

Low Noise Turn-Off Switching

•

Insulated Package:
Insulating voltage 2500 VRMS
Capacitance = 45 pF

ULTRAFAST
RECTIFIERS
120 AMPS
400 VOLTS

=

• ~-

UL Recognized, File #E69369

Mechanical Characteristics
• Case: Molded epoxy with isolated metal base
•

•

Weight: 28 g (approximately)

•

Finish: All External Surfaces Corrosion Resistant

•

Shipped 10 units per plastic tube

•

Marking: BYT261 PIV-400M

SOT-2278, STYLE 2

MAXIMUM RATINGS
Symbol

Rating
Peak Repetitive Reverse Voltage
Average Rectified Current
TC = 80°C

Per Device
Per Diode

Peak Repetitive Forward Current, Per Diode

Max-

Unit

VRRM

400

V

IF(AV)

120
60

A.

IFRM

800

A

IFSM

600

A

TJ

-40 to +150

°c

Tstg

-40 to +150

°C

tp<10~

Nonrepetitive Peak Surge Current
(Surge applied al rated load conditions hallwave, single phase, 60 Hz)
Operating Junclion Temperature
Storage Temperature

THERMAL CHARACTERISTICS
Thermal Resistance, Junclion to Case

0.85
0.5
0.1

Per Diode
Per Device

Coupling

ELECTRICAL CHARACTERISTICS PER DIODE
Instantaneous Forward Voltage (1)
IF=60A, TC = 25°C
IF=60A, TC=100°C

VF

Instantaneous Reverse Current (2)
VR = 400 V, TC = 25°C
VR = 400 V, TC = 100°C

IR

V
1.5
1.4
60
6

~A

mA

(1) Pulse Test: Pulse Width = 380 Ils, Duty Cycle,; 2%
(2) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 2%

Rev 1

4-108

Rectifier Device Data

BYT261 PIV-400M

RECOVERY CHARACTERISTICS
Test Conditions
IF = 1 A, VR;' 30 V, dlF/dt = -15 AlIJf5
IF = 0.5 A, IR = 1 A,l rr =0.25 A

Symbol

Typ

Max

Unit

trr

-

100
50

ns

Typ

Max

Unit

-

75

TURN-OFF SWITCHING CHARACTERISTICS (without series inductance)
Test Conditions

Symbol

Vee = 200 V, IF = 60 A, TJ = 100'e, Lp < 0.051'H (See Figure 11)
dlF/dt = -240 AlIlS
dlF/dt = -480 AIl'S

tlRM

50

dlF/dt = -240 AlIJf5
dlF/dl = -480 AlIJf5

IRM

-

ns

-

18

-

A

24

Typ

Max

Unit

3.3

4

TURN-OFF OVERVOLTAGE COEFFICIENT (with series inductance)
Test Conditions
TJ = 100'e, Vee = 120 V, IF = IF1AV)
dlF/dt = -60 AIl'S, Lp = 0.81'H See Figure 12)

Rectifier Device Data

Symbol
e

VRP
= Vee

4-109

a

BYT261 PIV-400M

120
110
I0=0.1 I- L.12
100
.I V
90
/
V
/
80
/
/
I
0=0.05 /
~ 70 I - 1/ /
./ . /
I
~ 60
V ./V
I
iF 50
/ V
~
40
/ ~~
30
V..I. ~ IY
20
iii'"'
10
o=tptT -ItpJ- ~
00 5 10 15 20 25 30 35 40 45 50 55 60 65 70
IF(AV) (A)

400

0~0.51-

"

Va=1

\\

~ 200

-

250

"'" '"

200

$ 150
~

",

ill

Tease = 100°C

I'..

0=0.2

.......::.C APPLIED < 0.5 VRRM
r-!:.0.5

100

-

.........
VA

-

...

.01

.02

.04

.06 .080.1
Ip (s)

0.2

,/~

0.4 0.6

I-T-I

0=0.1
11111

0.1
0.001

~

0=1~
I I

0.01

-II l-

i 111111

0.1

2.5

MAX (90% CONFIDENC':!,...-

~

;;;:::-

~r

........

........ V T1=25 C

::;;.-

I90%
TJ = l000C

. / i--'

~

~

p

a:
a:

o

-TJ = 100°C

/

150

200

250

IF (A)
Figure 5. Voltage Drop versus Forward Current

V

./
t--

100

.-

0- 1.5

0

0.5

50

10

CO~FID~NCEI-

TJ = 100°C

--

II II

Figure 4. Relative Variation of Thermal Impedance
Junction to Case versus Pulse Duration

2.5

~"

t

I(s)

Figure 3. Non-Repetitive Peak Surge Current
versus Overload Duration

4-110

0.8

I"

~rrllliiilr

50

o

0.6

.J'

0=0.5

-I

Tp

0.4

-

Figure 2. Peak Current versus Form Factor

IM~~
I-

I

0.2

Figure 1. Low Frequency Power Losses
versus Average Current

II

-----

I- 25w--...

I

~-ltp 11- -

""'- ~ :--........::r--:

:\..

tOO

I

r-T"J. -

o=t~

/,75W

,,< V 50W
\ -::.> r-....

$

~=

"'"

I

\ 100W
300

-1TI-_

'"

"

I

20

40

.... '1""
60 80 100
dlF/dl (AlIJ.S)

200

600

1000

Figure 6. Recovery Charge versus dlF/dt

Rectifier Device Data

BYT261 PIV-400M

I
1.5

\
\\

~
.::

50

I

I I I I I
TJ = 100°C

40
30
MAX (90% CONFIDENCE)

20

I'

0.5

I

IF ID
TJ = 100°C
90% CONFIDENCE _

--r-

100

. / "V

10

r-

200
300
dlF/dl (NilS)

400

~

500

20

Figure 7. Recovery Time versus dlF/dt

60 80 100
dIF/dt(NJ!S)

200

400 600

1000

•

1.6
TJ = 100°C
90% CONFIDENCE

20
15

a:

40

Figure B. Peak Reverse Current versus dlF/dt

25

>

Vv

V VrvP

V

V

TYP

1.4

...--

1.2

... 0.8 I--

/

10

I'
I

o0

0.6

/

0.4

/

I~

V

V

~

r-- ~RR
~I

0.2
50

100

150 200 250 300
dIF/dl(NJ!S)

350 400

450

500

00

50

200

250

Figure 10. Dynamic Parameters versus
Junction Temperature

-tJ
Lc

Rectifier Device Data

150
TJ (OC)

Figure 9. Peak Forward Voltage versus dlF/dt

Figure 11. Turn-Qff Switching Characteristics
(Without series inductance)

100

UT
lp

VCC

Figure 12. Turn-Qff Switching Characteristics
(With series inductance)

4-111

I

I

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Ultrafast Power Rectifiers

BYT261 PIV-1 OOOM

, Dual high voltage rectifiers suited for Switch mode Power Supplies and other
power converters.
• Very Low Reverse Recovery lime
ULTRAFAST
RECTIFIERS
120 AMPS
1000 VOLTS

• Very Low Switching Losses
• Low Noise Turn-Off Switching
•

Insulated Package:
Insulating voltage = 2500 VRMS
CapaCitance 45 pF

=

• '1M - UL Recognized, File #E69369
Mechanical Characteristics
• Case: Molded epoxy with isolated metal base

•

•

Weight: 28 g (approximately)

•

Finish: All External Surfaces Corrosion Resistant

• Shipped 10 units per plastic tube
•

Marking: BYT261PIV-l000M

SOT-2278, STYLE 2

MAXIMUM RATINGS
Rating

Symbol

Max

Unit

VRRM

1000

V

IF(AV)

120
60

A

Peak Repetitive Forward Current, Per Diode
tp< lOllS

IFRM

750

A

Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions hallwave, single phase, 60 Hz)

IFSM

400

A

TJ

-40 to +150

Tstg

-40 to +150

'c
'c

Peak Repetitive Reverse Voltage
Average Rectified Current
TC = 60'C

Per Device
Per Diode

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case

1.1

Per Diode
Per Device

0,6

0.1

Coupling

ELECTRICAL CHARACTERISTICS PER DIODE
Instantaneous Forward Voltage (1)
IF= 60 A, TC = 25'C
IF = 60 A, TC = 100'C

VF

Instantaneous Reverse Current (2)
VR=1000V, TC=25'C
VR = 1000 V, TC = 100'C

IR

V

1.9
1.8
100

I1A

6

mA

(1) Pulse Test: Pulse Width = 380 liS, Duty Cycle,;; 2%
(2) Pulse Test: Pulse Width = 5 ms, Duty Cycle < 2%

Rev 1

4-112

Rectifier Device Data

BYT261 PIV-1 OOOM

RECOVERY CHARACTERISTICS
Test Conditions
IF =1 A, VR =30 V, dlF/dt =-15 NilS
IF =0.5 A, IR =1 A, I" =0.25 A

Symbol

Typ

Max

Unit

trr

-

170
70

ns

Typ

Max

Unil

-

200

TURN-OFF SWITCHING CHARACTERISTICS (without series inductance)
Test Conditions
Vee =200 V, IF =60 A, TJ
dlF/dt =-240 NJ1S
dlF/dt =-480 NilS

=100'e, Lp < 0.051lH (See Figure 11)

dlF/dt =-240 NilS
dlF/dt =-480 NilS

Symbol
tlRM

IRM

ns
120

-

-

40

44

-

A

TURN-OFF OVERVOLTAGE COEFFICIENT (with series inductance)
Tesl Condilions
TJ =100'e, Vee =200 V, IF =IF(AV)
dlF/dt =-60 NJ1S, Lp =2.5 IlH (See Figure 12)

Rectifier Device Data

Symbol

Typ

Max'

e = VRP
Vee

3.3

4.5

Unit

4-113

•

I

BYT261 PIV-1 OOOM

SOD

130 '---'-'--'11--'-1.""-"
~----r/---'---'-----'-/-'-""'-'-I/I--'--""--'
- -t
1201---11--t
6 = 0.05 I
,I
Y.
1
J
110 I-HH-l-l+'+--r.--hll--t-.,"''--b''£!"'' 6 = 1 _

1~~

Ili=~.l

-r-I 1

~ ~~ "-

/

/

r~

6=0.2_

LJ

V

~
//

40

IIAI.o"".

I

1.0"""""

~

,~ '/. , .

~~

00

_

I'ZI I7')l . _
-YA-{~~=lf Il lp jl-

20'"

10

-

. I

200
150

\

00

I_

~IM=

P=70W

-·lip I- _

P=40W

P=20W
I><.
"P"'\"<.. '> .......

~ p-........ r-

50

I

I-T"1

\ .\
.\~

Figure 1. Low Frequency Power Losses
versus Average Current

•

I

Ii = tpfT

300

100

5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
IF(AV) (A)

I

\P=100W

~ 250

14- T--'
I

400
350

g

I I
I I

,/ /

60
50
30

li~O.~--

....,.

I
I

450

0.1

0.2

0.3

-- -

0.4

0.5
Ii

0.6

0.7

0.8

0.9

Figure 2. Peak Current versus Form Factor

350
6 = 0.5

rr250

300

g

:::;;

6=0.5

t-

~ ......

200
150
100

~

rTT111

["'or--

r--

:'{nfiR

so -

I I I

o

~=IOi51111

I-"

~
~JI

~

TC=60°C

I I

0.01

0.1

~

6 = 0.1

I-T-1

~

SINGLE ~~LSE

r I II
I

~1~

0.001

~

6=0.2
TC = 25°C

0.1
0.001

6=tpfT -\t lI I 1111111. I ~ I I II

1111111111
0.01

0.1

10

t (s)

t (s)

Figure 3. Non-Repetitive Peak Surge Current
versus Overload Duration

Figure 4. Relative Variation of Thermal Impedance
Junction to Case versus Pulse Duration

10
MAXIMUM VALUES

90% CONFIDENCE TJ = 100°C

!= I~ = IF(~V)

2.5 HH-+++H-Ht-+H-+++Htl--++H-l-H++++--:l

/

~

TJ=25°C

:::;;
LL 1.5
>

I-" I- H111JI....1""'

I-!-FH+I-I±J.I,.~F",,=++~;OOoCH+l-H+l+--I
0.5

,;

~

I--:

~

/

0::
0::

o

-

00.1

4-114

10

100

o. 110

100

IFM(A)

dlF/dt (AlIlS)

Figure 5. Voltage Drop versus Forward Current

Figure 6. Recovery Charge versus dlFldt

500

Rectifier Device Data

BYT261 PIV-1 OOOM

1.5

~

1.25

I

IF= IF(AVd
TJ = 100' -

"

-;;; 0.75
0.5

r---....

0.25

00

50

100

150

IF= IF(AV)

-

200 250 300
dlF/dt (AlliS)

-

t--

350

400

450

.......

500

100
dlF/dt (AlliS)

35
90% CONFIDENCE TJ = l000C
- IF= IF(AV)

25
~ 20
"-

~

V

15

/

10

/
o0

L

V

50

/" ""

V

.........

500

Figure 8. Peak Reverse Current versus dlFldt

Figure 7. Recovery Time versus dlF/dt

30

i-"'"

/

...... 1'

..........

~

90% CONFIDENCE TJ = l000C

=

VF=1.1·VF--

\

'[

100

90'/, bONFlbENC~

...-

1.5
1.4
5' 1.3 I - TYPICAL VALUES
b_ 1.2
O
" 1.1
~ 1
I
~ 0.9
IRM
i:i: 0.8
i.---'
a: 0.7

...

~ 0.6

'"

~ 0.5
a: 0.4
~ 0.3

.....

-

, ...

i-":
~

......

V

ORR

t§ 0.2
100

150

200 250 300
dlF/dt (AlliS)

350

400

450 500

0.1
00

20

-tj
LC

Rectifier Device Data

60

80
TJ ('C)

100

120

140

Figure 10. Dynamic Parameters versus
Junction Temperature

Figure 9. Peak Forward Voltage versus dlFldt

Figure 11. Turn-Off Switching Characteristics
(Without series Inductance)

40

UT

Lp

VCC

Figure 12. Turn-Off Switching Characteristics
(With series Inductance)

4-115

•

MOTOROLA

-

•

MURP20020CT
MURP20040CT

SEMICONDUCTOR

TECHNICAL DATA

Preliminary Data Sheet

Motorola Preferred Devices

POWERTAP II
Ultrafast
SWITCH MODE Power Rectifier

ULTRAFAST
RECTIFIER

· .. designed for use in switching power supplies, inverters, and as free wheeling diodes.
This state·of·the·art device has the following features:

200 AMPERES
200-400 VOLTS

• Duaf Diodc Construction
• Low Leakage Current
• Low Forward Voltage
• 175'C Operating Junction Temperature
• Labor Saving POWERTAP Package

•

Mechanical Characteristics:
• Case: Epoxy, Molded with metal heatsink base

• Shipped 25 units per foam

• Weight: 80 grams (approximately)

• Marking: UP20020

• Finish: All External Surfaces Corrosion Resistant
• Top Terminal Torque: 25-40 Ib-in max
• Base Plate Torques: See procedure given in the Package Outline Section

CASE 357C-03
POWERTAPII

MAXIMUM RATINGS
Symbol

MURP20020CT

MURP20040CT

Unit

VRRM
VRWM
VR

200

400

Volts

IF(AV)

200 (TC = 130'C)
100 (Tc = 130'C)

200 (TC = 100'C)
100 (Tc = 100'C)

Amps

Peak Repetitive Forward Currenl, Per Leg
(Rated VR, Square Wave, 20 kHz), T C = 95'C

IFRM

200

200

Amps

Nonrepetitive Peak Surge Current Per Leg
(Surge applied at rated load conditions
hallwave, single phase, 60 Hz)

IFSM

800

800

Amps

TJ

-55 to +175

-55 to +175

'C

Tstg

-55 to +150

-55 to +150

'c

Rating
Peak Repetitive Reve~ Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(RatedVR)

Per Device
Per Leg

Operating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS PER LEG
Rating

Max

Thermal Resistance, Junction to Case

0.45

0.45

1.00
1.10
0.95

1.30
1.75
1.15

1000
150

500
50

50

75

ELECTRICAL CHARACTERISTICS PER LEG
Instantaneous Forward Voltage (1)
(iF = 100 Amp, TC = +25'C)
(iF = 200 Amp, T C = 25'C)
(iF = 100 Amp, TC = 125'C)

vF

Instantaneous Reverse Current (1)
(Rated dc Voltage, T C = 125'C)
(Rated dc Voltage, T C = 25'C)

iR

Maximum Reverse Recovery lime
(IF = 1.0 Amps, di/dt =' 50 Amps/Ils)

trr

Volts

IlA

ns

(1) Pulse Test: Pulse Width = 300 Ils, Duty Cycle,; 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rsv2

4-116

Rectifier Device Data

Section 5
Standard and Fast Recovery
Data Sheets

•

Rectifier Device Data

5-1

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

1N4001
thru
1N4007

Axial-Lead
Standard Recovery Rectifiers

1N4004 and 1N4007 are Motorola
PrefSrTed Devices

This data sheet provides information on subminiature size, axial lead mounted rectifiers
for general-purpose low-power applications.
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily S'olderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16" from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to
the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N4001, 1 N4002, 1 N4003, 1 N4004, 1 N4005, 1 N4006, 1N4007

LEAD MOUNTED
RECTIFIERS
50-1000 VOLTS
DIFFUSED JUNCTION

/

CASE5!Hl3
00-41

MAXIMUM RATINGS

•

Symbol

1N4001

1N4002

1N4003

1N4004

1N4005

1N4006

1N4007

Unit

"Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rallng

VRRM
VRWM
VR

50

100

200

400

600

BOO

1000

Volts

"Non-Repetitive Peak Reverse Voltage
(hallwave, single phase, 60 Hz)

VRSM

60

120

240

4BO

720

1000

t200

Volts

VR(RMS)

35

70

140

2BO

420

560

700

Volts

"RMS Reverse Voltage
"Average Rectilied Forward Current
(single phase, resistive load,
60 Hz, see Figure B, TA = 75"C)

10

1.0

Amp

"Non-Repetitive Peak Surge Current
(surge applied at rated load
conditions, see Figure 2)

IFSM

30 (lor 1 cycle)

Amp

Operating and Storage Junction
Temperature Range

TJ
Tstg

-65 to +175

"C

ELECTRICAL CHARACTERISTICS·
Rating
Maximum Instantaneous Forward Voltage Drop
(iF 1.0 Amp, TJ 25"C) Figure 1

=

=

Maximum Full-Cycle Average Forward Voltage Drop
(10 1.0 Amp, TL 75"C, 1 inch leads)

=

=

Maximum Reverse Current (rated dc voltage)
(TJ 25"C)
(TJ 100"C)

=
=

Maximum Full-Cycle Average Reverse Current
(10 1.0 Amp, TL 75"C, 1 inch leads)

=

=

Symbol

Typ

Max

Unit

vF

0.93

1.1

Volts

O.B

Volts

VF(AV)

-

I1A

IR
0.05
1.0
IR(AV)

-

10

50
30

i!A

"'Indicates JEOEC Registered Data
Preferred devices are Motorola recommendod choices for future use and best overall value.

RevS

5-2

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Axial-Lead
Fast-Recovery Rectifiers

1N4933
thru
1N4937

Axial-lead, fast-recovery rectifiers are designed for special applications such as dc
power supplies, inverters, converters, ultrasonic systems, choppers, low RF
interference and free wheeling diodes. A complete line of fast recovery rectifiers having
typical recovery time of 150 nanoseconds providing high efficiency at frequencies to
250 kHz.

1N4935 and 1N4937 are Motorola
Preferred Devices

FAST RECOVERY
RECTIFIERS
50-600 VOLTS
1.0 AMPERE

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16" from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to
the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N4933, 1N4934, 1N4935, 1N4936, 1N4937

/

CASE 59-03

D<>-41

MAXIMUM RATINGS (1)
Rating
"Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
"Non-Repetitive Peak Reverse Voltage
RMS Reverse Voltage

Symbol

1N4933

lN4934

lN4935

lN4936

lN4937

Unit

VRRM
VRWM
VR

50

100

200

400

600

Volts

VRSM
VR(RMS)

75
35

I

150
70

250
140

450
280

650
420

Volts

"Average Rectified Forward Current
(Single phase, resistive load,
TA = 75°C)(2)

10

1.0

Amp

"Non-Repetitive Peak Surge Cu rrent
(Surge applied at rated load
conditions)

IFSM

30

Amps

Operating Junction Temperature Range
Storage Temperature Range

TJ
Tstg

-65to+150
-65to+150

°C

THERMAL CHARACTERISTICS
Characteristic
Thermal ReSistance, Junction to Ambient
(Typical Printed Circuit Board Mounting)
*'ndlcates JEDEC RegLstered Data for 1N4933 Senes.
(1) Ratings at 25°C ambrent temperature unless otherwise sp8CJfied.
(2) Derate by 20% for capacitive loads.
Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 3

Rectifier Device Data

II

Symbol

Max

Unit

RUJC

65

°C/W

1N4933 THRU 1N4937

ELECTRICAL CHARACTERISTICS
Symbol

Min

lYP

Max

Unit

Instantaneous Forward Voltage
(IF = 3.14 Amp, TJ = 125°C)

vF

-

1.0

1.2

Volls

Forward Voltage
(IF = 1.0 Amp, TA = 25°C)

VF

-

1.0

1.1

Volts

"Reverse Current (Rated de Voltage) TA = 25°C
TA= 100°C

IR

-

-

1.0
50

5.0
100

~

Min

lYP

Max

Unit

-

150
175

200
300

1.0

2.0

Characteristic

"REVERSE RECOVERY CHARACTERISTICS
Characteristic

Symbol

Reverse Recovery Time
(IF = 1.0 Amp to VR = 30 Vde)
(IFM = 15 Amp, di/dt = 10 AiIlS)

trr

Reverse Recovery Current
(IF = 1.0 Amp to VR = 30 Vde)

IRM(REC)

ns

-

Amp

·Indlcates JEOEC Reglstored Data lor 1N4933 Series.

II

5-4

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

1N5400
thru
1N5408

Axial-Lead
Standard Recovery Rectifiers

1N5404 and 1N5406 are Motorola
, Preferred Devices

Lead mounted standard recovery rectifiers are designed for use in power supplies
and other applications having need of a device with the following features:
•
•
•
•
•

High Current to Small Size
High Surge Current Capability
Low Forward Voltage Drop
Void-Free Economical Plastic Package
Available in Volume Quantities

STANDARD
RECOVERY RECTIFIERS
50-1000 VOLTS
3.0 AMPERE

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16" from case
• Shipped in plastic bags, 5,000 per bag.
• Available Tape and Reeled, 1500 per reel, by adding a "RL" suffix to
the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1 N5400, 1 N5401, 1N5402, 1N5404, 1N5406, 1N5407, 1 N540S

MAXIMUM RATINGS
Symbol

lN5400

lN5401

lN5402

lN5404

lN5406

lN5407

lN540B

Unit

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

Rating

VRRM
VRWM
VR

50

100

200

400

600

BOO

1000

Volts

Non-repetitive Peak Reverse Voltage

VRSM

100

200

300

525

BOO

1000

1200

Volts

Average Rectified Forward Current
(Single Phase Resistive Load,
112" Leads, T L = 105°C)

10

3.0

Amp

Non-repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions)

IFSM

200 (one cycle)

Amp

Operating and Storage Junction
Temperature Range

TJ
Tstg

-65 to +170
-65to +175

°C

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(PC Board Mount, 112" Leads)

Symbol

Typ

Unit

RaJA

53

°C/W

ELECTRICAL CHARACTERISTICS
Characteristic
"Instantaneous Forward Voltage (1)
(iF = 9.4 Amp)
Average Reverse Current (1)
DC Reverse Current (Rated dc Voltage, TL = BO°C)

Symbol

Min

vF

-

IR(AV)
IR

-

-

Typ

Max

Unit

-

1.2

Volts

500
500

flA

-

-

JEOEC Registered Data.
(1) Measured in a single phase halfwave Circuit such as shown In Figure 6.25 of EIA AS-2B2, November 1963. Operated at rated load conditions T L '" eo°c, 10 '" 3.0 A, Vr ;:: VRWM'
Preferred deVices are Motorola recommended chOices for future use and best overall value.
Ratings at 25°C ambient temperature unless otherwise speCified.
60 Hz reSistive or Inductive loads.
For capacitive load, derate current by 20%.

Rev 2

Rectifier Device Data

5-5

•

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

MR850
MR85i
MR852
MR854
MR856

Axial Lead Fast Recovery Rectifiers
Axial lead mounted fast recovery power rectifiers are designed for special
applications such as dc power supplies, inverters, converters, ultrasonic systems,
choppers, low RF interference and free wheeling diodes. A complete line of fast
recovery rectifiers having typical recovery time of 100 nanoseconds providing high
efficiency at frequencies to 250 kHz.

MR852 and MRS56 ara Motorola

Mechanical Characteristics

Preferred Devices

• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16" from case
• Shipped in plastic bags, 5,000 per bag.
• Available Tape and Reeled, 1500 per reel, by adding a "RL" suffix to
the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: R850, R851, R852, R854, R856

FAST RECOVERY
POWER RECTIFIERS
50-600 VOLTS
3.0 AMPERES

MAXIMUM RATINGS
Rating

Symbol

MR850

MR851

MR852

MR854

MR856

Unit

VRRM
VRWM
VR

50

100

200

400

600

Volts

VRSM

75

150

250

450

650

Volts

VR(RMS)

35

70

140

280

420

Volts

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current
(Single phase resistive load, TA = 80°C)

10

3.0

Amp

Non-Repetitive Peak Surge Current
(surge applied at rated load conditions)

IFSM

100
(one cycle)

Amp

Operating and Storage Junction
Temperature Range

TJ,
Tstg

- 65 to +125
-65to +150

"C

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(Recommended Printed Circuit Board Mounting, See Note 4, Page 5)

Symbol

Max

Unit

RaJA

28

"C/W

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 2

Rectifier Device Data

MR850, MR851 , MR852, MR854, MR856

ELECTRICAL CHARACTERISTICS
Characteristic
Forward Voltage
(IF = 3.0 Amp, T J = 25°C)
Reverse Current (rated dc voltage) T J = 25°C

TJ = 80°C

["-

Symbol

Min

Typ

Max

Unit

VF

-

1.04

1.25

Volts

-

2.0

!,A

-

60

Unit

IR

MR851
MR852
MR854
MR856

-

100

10
150
150
200
250
300

Min

Typ

Max

-

100
150

200
300

-

-

2.0

-

-

-

REVERSE RECOVERY CHARACTERISTICS
Characteristic

Symbol

Reverse Recovery Time
(IF = 1.0 Amp to VR = 30 Vdc, Figure 9)
(IF = 15 Amp, dildt = 10 Ai!,s, Figure 10)

trr

Reverse Recovery Current
(IF = 1.0 Amp to VR = 30 Vdc, Figure 9)

IRM(REC)

-

ns

Amp

•

Rectifier Device Data

5-7

MR750
MR751 MR752
MR754 MR756
MR758 MR760

MOTOROLA

-

SEMICONDUCTOR

TECHNICAL DATA

Designers Data Sheet

MR754 and MR760 are
Motorola Preferred Devices

High Current Lead Mounted
Rectifiers

HIGH .cURRENT
LEAD MOUNTED
SILICON RECTIFIERS
50-1000 VOLTS
DIFFUSED JUNCTION

• Current Capacity Comparable To Chassis Mounted Rectifiers
• Very High Surge Capacity
• Insulated Case
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: .2.5 grams (approximately)
• Finish: All External Su/faces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Polarity: cathode polarity band
• Shipped 1000 units per plastic bag. Available Tape and Reeled, 800 units per reel
by adding a "RL" suffix to the part number
• Marking: R750, R751 , R752, R754, R758, R760
'MAXIMUM RATINGS

•

Characteristic

Symbol

MR150

MR151

MR152

MR754

MR156

MR158

MR160

Unit

Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

50

100

200

400

600

SOD

1000

Volts

Non-Repetitive Peak Reverse Voltage
(hallwave, single phase, 60 Hz peak)

VRSM

60

120

240

460

720

960

1200

Volts

35

70

140

280

420

560

700

Volts

Peak Repetitive Reverse Voltage

RMS Reverse Voltage

VR(RMS)

Average Rectified Forward Current
(single phase, resistive load, 60 Hz)
See Figures 5 and 6
Non-Repetitive Peak Surge Current
(surge applied at rated load
conditions)
Operating and Storage Junction

22 (TL ~ 60°C, 1/8" Lead Lengths)
6.0 (TA ~ 60°C, P.C. Board mounting)

10

Amp

IFSM
400 (for 1 cycle)

~

TJ, Tstg

65 to +175

Temperature Range

~

Amp

°C

ELECTRICAL CHARACTERISTICS
Characteristic and Conditions

Maximum Instantaneous Forward Voltage

Drop (iF

~

100 Amp, TJ

~

~

6.0 Amp, TA

~

Max

Unit

vF

1.25

Volts

VF

0.90

Volts

IR

25
1.0

/LA
mA

25°C)

Maximum Forward Voltage Drop

(IF

Symbol

25'C, 318" leads)

Maximum Reverse CUrrent TJ ~ 25'C
(rated dc voltage)
TJ = loo'C

Rev 2

5--8

Rectifier Device Data

•

MR750, MR751 , MR752, MR754, MR756, MR758, MR760

FIGURE 2 - MAXIMUM SURGE CAPABILITY

FIGURE 1 - FORWARD VOLTAGE
700
500

.....

r- TJ:25'C

./

/'

lOO
200

r--- -TYPICAL

/

/

/

100

V

-

...-

0:

iii

~

-'

~
::2
~

25'C

25'C

r--~

.........

...............

............

I'r-.
r-.

80
60
2.0

1.0

I

5.0

/I

'":ii1

~t-...

.........r-."

~

II

20

............. I

~ 100

I

lO

r~/~ T~

..'"
.'"

VRRM MAY BE APPLIED BETWEEN
EACH CYCLE Of SURGE. THE TJ
NOTEO IS Ti PRIOR T01SURGE

'I/(P(r/~
......... j 11/(

.............

"' 200
~

I

50

~
.............. NQN~

~ 300

0

""~
~
=>

...........

" 400
~

MAXIMUM

V

/

600
0:

10

20

100

50

NUMBER OF CYCLES AT 60 Hz

I

10

FIGURE 3 - FORWARD VOLTAGE
TEMPERATURE COEFFICIENT

7.0

ffi 5.0

+0.5

'"

•

~

~

3.

0

/
V/

'"
3;

~ 2.0

.§ ·0.5

...

iii
u

1.0

ffi

-

8

0.5

-1.5

O.l
0.2
0.6

-2.0
0.8

1.0

1.2

1.4

1.6

1.B

2.0

2.2

2.4

........ V

TYPICAL RANGE
-1.0

2.6

0.5

0.2

Vf. INSTANTANEOUS fORWARD VOLTAGE (VOLTS)

1.0

-

2.0

...... V

5.0

10

20

50

100

200

If. INSTANTANEOUS FORWARD CURRENT (AMP)

FIGURE 4 - TYPICAL TRANSIENT THERMAL RESISTANCE

==~ 10~====!!!1~r,J--~I'L~~~~:--~IL~~~~II!!!l~~!l!l~;!~I1i1.~!;~~~~~~~!;;;~~~~~~!=l
~~
..:'"

~~5.0

=
-

-....

'--HEATSINK

1/4':-

~~

~

~ ~ 3.0

liS"

Both leads to heat sink, with lengths as shown. Variations in
f; ~ 2.0
V
R6Jl(t) below 2.0 seconds are independent of lead connections
~ ~
I---l--lf-+-l--l-+-+-l-l-++-::;;_"F-+-I-+-+-lf- of 1/8 inch or greater,and vary only about'±.20%from the values
~ ~ 1.0
V
shown. Values for limes greater than 2.0 seconds may be obtained

:::

~i=

-

~ ffi ~~~!~!~~~~i~~~!!~~~~~~~i~~~§!~~r~~~~~~;ea8~Uo~:~~i~~:: :~od::~:t~~!8!,OUS~~~at~~s~i~ae~en ::=
0.5

curves asa guide. Either typical or maximum values may be
used. For ROJLIt) values at pulse widths less than 0.1 second,

-

~ ~:~~~~~""'~~:t~;::3::~:l~~:l:t::::j::::t::t:~::j:~~.j:l~:·~~~~~:j~~~i~iM~·~lc_.n_b_e_e~Jxt_ra~p'_I'~:~d_d'_:-L-to~10~"_'Jat_._c'~n~'-l~:
0.1

0.2

O.l

0.5

0.7

1.0

2.0

l.O

5.0

7.0

10

20

lO

50

70

t, TIME (SECONDS)

Rectifier Device Data

5-9

MR750, MR751 , MR752, MR754, MR756, MR758, MR760

FIGURE 6 - MAXIMUM CURRENT RATINGS

FIGURE 5 - MAXIMUM CURRENT RATINGS
28

7.0

f'...
.......

0

6
2
0
0

t-...

I""'--...

~3/i?""--

--

.....

f""'.,.

t....

.....

~~:H~~~

.......

0
40

60

80

l-

LENGTHS

-

100

i

5.0

"'"

4.0

i

~ 3.0

"".

'"ffi

"'

>


-

"
r............ "-

r-- "

~

-

BOTH LEADS TO HEAT _

r-....

t....
5/8"

I

LDfDS

I
...........

1/4"

20

'":'!:"

RES!STIVEJNDuciIVE -

L- 118"

___ • ___ ••• I(pk) -10 lavg____ • l(pk)"20Ia"g-

~

.,~

.....

f - 60 Hz- -

~ ./, ~

....

- 40 oCIW,
2.0 f--ROJA
SEE NOTE

~ ,~

/

6.0PKIIAVE - 6.28)

''''~'' !!II..
t.::'!Io..

1.0

o
o

",
20

40

T L,LEAO TEMPERATURE (OC)

60

80

100

120

140

,

160

180

200

TA, AMBIENT TEMPERATURE (OC)

FIGURE 7 - POWER DISSIPATION
NOTES
32

THERMAL CIRCUIT MODEL
(For Heat ConductIon Through The Leadsl

~

28

I-

•

~

R8SK
24

i5

~

20

ill

16

C

'"w
~

J

Use of the above model permits junction to lead thermal resistance for any
mounting configuration to be found. Lowest values occur when one sLde of the

~

rectifier is brought as close as possible to the heat smk as shown below. Terms in
the model signify:

IF(avg), AVERAGE FORWARD CURRENT (AMP)

FIGURE 8 - STEADY STATE THERMAL RESISTANCE
40r---.----.-----.----.----.----.~--._~_,

35/----+---+---1-----j-----,:

g~30
:-

"'z

~~15
~§10r_--~~~+_~~~~~~~;

~~

1/4

3/8

112

L, LEAD LENGTH (INCHES)

5-10

1.0

Recommended mounting for half wave circuit

Rectifier Device Data

MR750, MR751; MR752, MR754, MR756, MR758, MR760

TYPICAL DYNAMIC CHARACTERISTICS
FIGURE 10 - REVERSE RECOVERY TIME

FIGURE 9 - RECTIFICATION EFFICIENCY

--

100

30

':<-:::-

,<

-

70

20

r-

~

~

~

~<3

'\
50

§

TJ ~ 175'C

r-

I rrv'v-

I

"

I'\. TJ

\

\

30

20

rruL
,,

---

, ,"

1.0

2.0

3.0

'"'"

~
~
ill

\

\

CURRENT INPUT WAVEFORM

~

~

~ 25'C

2.0

\ \

,

:--..... ..........

r-

I,

"

I

20

30

50

70 100

0.2

0.1

0.7

I.........

f".

'"

.:!-

TJ~25'C

~

~

I
I
.;i

30

0.3

I'-- I'-.. i'i'

10
20

1.0

30

50

70 100

V" REVERSE VOLTAGE IVOLTS)

1_ ~,-I

2.0

3.0

r-

-

5.0 7.0

10

V

•

/

t

/

/"
.,..-/

V

V~r=

IV

L.--

V-

---

V

---

V

1.0

FIGURE 13 - SINGLE-PHASE HALF-WAVE
RECTIFIER CIRCUIT

TJ~25'C

Vfr

0.3

0.2

I

~V'~

r--

0.1
10

0.5 0.7

I

r--

0.5 f--

20

7.0

............

....... r-.,.
I"-. ........

FIGURE 12 - FORWARD RECOVERY TIME

500

5.0

,"-.

1,/1" RATIO OF REVERSE TO FORWARO CURRENT

1.0

3.0

"-.

~0Wr- I, _I t" 1_

FIGURE 11 - JUNCTION CAPACITANCE

2.0

.......

3A-:
IA

1.0
10

1000
700

1.0

TJ ~ 25'C

1,~5A

REPETITION FREnUENCY (kHz)

300

f".,
>,

5.0

~ 3.0
.J

1\

0

7.0

1\

5.0 7.0

10

I"-.
r-....., "'-

-

~i-'""'
vfr=2V

r- -

II

2.0

3.0

5.0

7.0

10

if, FORWARD PULSE CURRENT lAMP)

V 2m

4

,,2RL
a(sinel

=: - - .

100%

V2m

~~

-.
rr 2

100%)'~

40.6%

(2)

4RL
For a square WiNe input of

amplitude V m • the efficiency
factor becomes:

The rectification efficiency factor a shown in Figure 9 was
calculated using the formula:

V2 o (dcl
P(dc)
RL
V 2o (dc)
0=--=---·100%=
·100% (1)
p{rms)
V2 o (rms)
V2 o (ac) + V2 o (dc)
RL

For a sine wave input Vm sin (wt) to the diode, assumed lossles5,
the maximum theoretical efficiency factor becomes:

Rectifier Device Data

V2 m
2RL
O(square) = V2m· 100%=50% (3)

RL

IA full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 10) becomes significant, resulting
in an increasing ac voltage component across R L wh ich is opposite
in polarity to the forward current, thereby reducing the value of
the efficiency factor a, as shown on Figure 9.
It should be emphasized that Figure 9 shows waveform efficiency only; it does not provide a measure of diode losses. Data was
obtained by measuring the ac component of Va with a true rms ac
voltmeter and the dc component with a dc voltmeter. The data was
used in Equation 1 to obtain points for Figure 9.

5-11

-

MR2500
Series

MOTOROLA

SEMICONDUCTOR

TECHNICAL DATA

•

MR2504 and MR2510 are
Motorola Preferred Devices

Medium-Current Silicon
Rectifiers

MEDIUM-CURRENT

... compact, highly efficient silicon rectifiers for medium-current applications requiring:
o High Current Surge -

SILICON RECTIFIERS

400 Amperes @ TJ = 175'C
25 Amperes @ T C = 150°C

50 - 1000 VOL TS
25 AMPERES
DIFFUSED JUNCTION

o Peak Performance @ Elevated Temperature o LowCost
o Compact, Molded Package -

For Optimum Efficiency in a Small Case Configuration

o Available With a Single Lead Attached, Consult Factory

Mechanical Characteristics:
o Case: Epoxy, Molded
o Weight: 1.8 grams (approximately)
o Finish: All External Surfaces Corrosion Resistant and Terminals are Readily
Solderable
o Lead Temperature for Soldering Purposes: requires a custom temperature soldering
profile
o Polarity: cathode polarity band
o Shipped 5000 units per box
o Marking: R2500, R2501, R2502, R2504, R2506, R2510

•

CASE 193-04

MAXIMUM RATINGS
MR
2500

MR
2501

MR
2502

MR
2504

MR
2506

MR
2510

Characteristic

Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

50

100

200

400

600

1000

Non-Repetitive Peak Reverse
Vollage (half wave, single phase,
60 Hz peak)

VRSM

60

120

240

480

720

1200

Average Rectified Forward Current
(Single phase, resistive load,
60 Hz, Te = 150'C)

10

25

Amp

Non-Repetitive Peak Surge
Current (surge applied @ rated
load conditions, half wave,
single phase, 60 Hz)

IFSM

400 (for 1 cycle)

Amp

TJ, Tstg

-65 to +175

°c

Operating and Storage Junction
Temperature Range

Unit
Volts

Volts

THERMAL CHARACTERISTICS
Characteristic
Thermal ReSistance, Junction to Case
(Single Side Cooled)

Symbol

Max

Unit

R8JC

1.0

°C/W

ELECTRICAL CHARACTERISTICS
Symbol

Max

Unit

Maximum Instantaneous Forward Voltage
(iF = 78.5 Amp, T C = 25'C)

Characteristics and Conditions

vF

1.18

Volts

Maximum Reverse Current (rated de voltage)
TC = 25°C
Tr.= 100°C

IR

!1A
100
500

Rev 2

5-12

Rectifier Device Data

MR2500 Series

FIGURE 1 - FORWARD VOLTAGE
700
500 -TJ=250C

V

/

-

/

r-TYPICAL

~

"~

" r-fLf\

~

~

....... .........

80
2.0

5.0

10

20

50

100

NUMBER Of CYCLES

I

10

FIGURE 3 - FORWARD VOLTAGE TEMPERATURE
COEFFICIENT

~
~ 1.0

ffi

25°C

60
1.0

~

z

I-,=",,~

II

a

i

~

III

'" 20

............... ........

I

:i§
«
'"

I

30

..........

TJ = 1750C

200

~ 100

50

r-.......

r--...

a

/"

VRRM MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE TJ
NOTED ISTJ PRIOR TO SURGE
1= 60 Hz

' ....

...............

~ 300

70
0;

.............

§

/

J

100

MAXIMUM

.........

0:

"5 400

r-

V

/'

200

-

....-

./

300

FIGURE 2 - NON·REPETITIVE SURGE CURRENT
600

+0.5

5.0

~

:.i

t;

3.0

z

<3'

~ 2.0

~ -0.5

~

~

1.0

TYPICAL RANGE,

13

O. 7

~ -1.0

0.5

8

..-f-'"

-

-1.5
0.3
0.2
0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-2.0
0.2

0.5

vF,lNSTANTANEOUS FORWARD VOLTAGE (VOLTS)

~
'"5
O~
ffi 4
............

J :(FM) = w(SINE WAVE RESISTIVE LOAD)_

~

~

a

~

~
~
w

I'--Or20

r--

:-.

'"

ffi

j

.......

~ rr~
.......

-

1o
130

135

I
I
CAPACITIVE
LOADS

SINEWAVE
CAPACITIVE _:(FM)=20
LOADS
'IAV)

'7

-

-

~~
.......

140 145 150
155
160
TC, CASE TEMPERATURE 10C)

Rectifier Device Data

/

J

f-IO

/

L\

/ / /

N'1>'-.""r--t) ............ 0 -"
-r-c-......: ~ ~

~ 10

125

't

"'- ~ift~:
'J'
IAV)

1.0
2.0
5.0
10
20
50
100
iF, INSTANTANEOUS fORWARD CURRENT lAMP)

200

FIGURE 5 - FORWARD POWER DISSIPATION

FIGURE 4 - CURRENT DERATING
0

........ ~

_P'<

J

/ /

165

170

175

~

./

./
de

"

:Y' VsauARE_ ,---

./

/ 6(
~ V '-., SINE~AVE

'// /~ V

~ -~

/

v j/
/ V/ /
WAVE

__
RESISTIVE LOAD

/~~

~

~"""
50

10
20
30
40
IFIAV), AVERAGE fORWARD CURRENT lAMP)

5-13

•

MR2500 Series

FIGURE 6 - THERMAL RESPONSE

~

1. 0
~ D. 7
~ O. 5

I--""

o

~ O.3

--

~ O.2

~
~

ffi

O. 1
0.0 7
0.05

:E:
I-

0.03

~

~

in

./

0.02

z

~

:=" 0.01

1'!

ROJC(t) =ROJC • r(t)
NOTE 1

0.05 0.07

0.1

0.2

0.3

0.5

0.7

1.0

3.0
5.0
"TIME (ms)

2.0

7.0

10

20

30

50

70

100

200

500

300

FIGURE 7 - CAPACITANCE
500

RJ[
Pk

•

Ppk

DUTY CYCLE, 0'" tplll
PEAKPOWER,Ppk,lspeBkolan

t

P

TIME

i--- II -----I

equlvalenlsquarepowerpulse

"

g

~u"100

--ALL DEVICES
,
- - - ALL DEVICES EXCEPT MR2500

0
50

mllm"lirrlt v"lnt nl 1!,"'\lrt111\lrlm~' ICslstante aillme, I, from Figure 6, I e.,

'1,1

0.1

IIIUln,dl/l'llv.IIIII' ul II.m~lenllhemldllf!Slslanceall,mell t tp.

:g

0.7

w

'"

;:: 0.5

i-Tr 25 DC

ffi
>

§

2.0

I-~
~ I-'fr-J "fr

0.3

= i-"" ../""
=
~ 0.2
=
~

.......-

:g

-t""

.........

I--""

.........

---

0.1

l--1.0

5-14

~

.

0

ffi

7.0

w

VIr = 1.0 V

1.0
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)

r-...

-

2.0
3.0
5.0
IF, FORWARD CURRENT (AMP)

>

~

t--.. ....... r--....
-

IF -lOA

5.0

0~~0'25IR
.......

'>c ~
5.0 A

~ 0
=
2.
$

2.0V

10

1.0
0.1

I-'rr

r-.....

....... I '

~ 3.0

7.0

100

IF

=

--

50

TJ = 25'e

........

;::

0

~

0.5

0.2

FIGURE 9 - REVERSE RECOVERY TIME

FIGURE 8 - FORWARD RECOVERY TIME
1.0

2~DC

i"...

~ 200

l'lrhf'II'

1111

TJ =

300

To dele/mUle maximum IUllclmll temperature ollhe diode rn a given sltuation,lhe follOWing
prucedure IS recommended
Thr temperalUre ollhe C,lseshuuld tJeme~sureduslllgd thermocouple placed on Ihecase at
the temperalure relerencepoillt [sel' the (l1l!llIledrawmg 011 pilIJe 11 The Ihermal mass connected
to the Lase IS normallv largr l'IIOIIIJI1 so IhJI II Will nol slQRlhCanlly respond 10 heal surges
gencrJted 111 the diode ~s d lI'wlt III ,'III\!'d operatlOu once steady state condltfonsare a~hleved
USIIlI) the me~sured vdtue oIl C' thl' jlllllllun temperature may be determmed by
TJ TC·4TJC
wheTI' A. TJC n the IlItTe,IS~ III 11111(.111,)1\ l~mperature above the case temperalure II may be
delewnul'dhy
A Ill: rJll. A"JC ttl· II ()). 11t,' Ipl' fllpl -1(t,1I

1111'

r-

........

II
I"-....

lU

............. i'- ....... :"
...... r--,

0.2

3.0
5.0 7.0
0.3
0.5 0.7 1.0 2.0
IRAF, RATIO OF REVERSE TO FORWARD CURRENT

10

Rectifier Device Data

MR2500 Series

FIGURE 10 - RECTIFICATION WAVEFORM EFFICIENCY

60

-

40

N"

'"

0
0-

'~"'
t

ffi

-

TJ=250 C

,

20

'\
1\

;:;

~

CURRENT INPUT WAVEFORM

b-

JVV-

10

B.O
6.0
1.0

I

~-~-~ II
2.0

3.0

5.0 7.0 10
20
f. FREQUENCY 1kHz)

30

50

70

100

•

RECTIFICATION EFFICIENCY NOTE
FIGURE 11 - SINGLE-PHASE HALF-WAVE RECTIFIER CIRCUIT

The rectification efficiency factor a shown in Figure 10 was
calculated using the formula:

For a square wave input of amplitude V m , the efficiency factor
becomes:

V2m
V201dc)
Pdc

RL

a= Prms = V20lrms)

o 100% =

V2 01dc )
0100%
V201ac) + V201dc)

(1)

(3)

RL

RL

(A full wave circuit has twice thow efficiencies)

For a sine wave input Vm sin (wt) to the diode, assume lossless,
the maximum theoretical efficiency factor becomes:

As the frequency of the input signal is increased, the reverse
recovery time of the diode (Figure 9) becomes significant, resulting in an increasing ae voltage component across A L which is
opposite in polarity to the forw .. rd current, thereby reducing the
value of the efficiency factor

V2m
n 2RL

2RL
alsquare) = V2m 0 100% = 50%

4

alsine) = V2m 0100%=-;;20100%=40.6%
4RL

Rectifier Device Dala

(2)

0,

as shown on Figure 10.

It should be emphasized that Figure 10 shows waveform
efficiency only; it does not provide a measure of diode losses.
Data was Obtained by measuring the ae component of Va with a
true rms ae voltmeter and the de component with a dc voltmeter.
The data was used in Equation 1 to obtain points for Figure 10.

5-15

MR2500 Series

ASSEMBLY AND SOLDERING INFORMATION
There are two basic areas of consideration for successful
implementation of button rectifiers:
1. Mounting and Handling
2. Soldering
each should be carefully examined before attempting a
finished assembly or mounting operation.
MOUNTING AND HANDLING
The button rectifier lends itself to a multitude of
assembly arrangements but one key consideration must
always be included:
One Side of the Connections to
the Bu~on Must Be Flexiblel
Strain Relief Termlnel
for Button Rectifier

This stress relief to the button ~Copper
should also be chosen for maxi~
Terminel
mum contact area to afford the
~
Button
best heat transfer - but not at
_/
the expense of flexibility. For an
""'" r~:,
annealed copper terminal a thickSln:t
ness of 0.015" is suggested.
Materl.n

•

The base heat sink may be of various materials whose
shape and size are a function of the individual application
and the heat transfer requirements.
Common
Materials
Advantages and Disadvantages
Steel
Low Cost; relatively low heat conductivity
Copper
High Cost; high heat conductivity
Aluminum Medium Cost; medium heat conductivity
Relatively expensive to plate and not all
platers can process aluminum.
Handling of the button during assembly must be
relatively gentle to minimize sharp impact shocks and
avoid nicking of the plastic. Improperly designed automatic
handling equipment is the worst source of unnecessary
shocks. Techniques for vacuum handling and spring loading should be investigated.
The mechanical stress limits for the button diode are
as follows:
Compression 321bs.
142.3 Newton
321bs.
142.3 Newton
Tension
Torsion
6-inch Ibs. 0.68 N.ewton-meters
Shear
55 I bs.
244.7 Newton
MECHANICAL STRESS

I

Compression

~

;;
5-16

Shear

Exceeding these recommended maximums can result in
electrical degradation of the device.
SOLDERING
The button rectifier is basically a semiconductor chip
bonded between two nickel· plated copper heat sinks with
an encapsulating material of thermal-setting silicone. The
exposed metal areas are also tin piated to enhance
solderability .
In the soldering process it is important that the temperature not exceed 2500 C if device damage is to be
avoided. Various solder alloys can be used for this oper. ation but two types are recommended for best results:
1. 96.5% tin, 3.5% silver; Melting point is 221 0 C (this
particular eutetic is used by Motorola for its button
rectifier assemblies).
2. 63% tin, 37% lead; Melting point 1830 C (eutetic).
Solder is avaihible as preforms or paste. The paste
contains both the metal and flux and can be dispensed
rapidly. The solder preform requires the application of a
flux to assure good wetting of the solder. The type of
flux used depends upon the degree of cleaning to be
accomplished and is a function of the metals involved.
These fluxes range from a mild rosin to a strong acid; e.g.,
Nickel plating oxides are best removed by an acid base
flux while an activated rosin flux may be sufficient
for tin plated parts .
Since the button is relatively light-weight, there is a
tendency for it to float when the solder becomes liquid.
To prevent bad joints and misalignment it is suggested
that a weighting or spring loaded fixture be employed. It
is also important that severe thermal shock (either heating
or cooling) be avoided as it may lead to damage of the die
or encapsulant of the part.
Button holding fixtures for use during soldering may be
of various materials. Stainless steel has a longer use life
while black anodized aluminum is less expensive and will
limit heat reflection and enhance absorption. The assembly
volume will influence the choice of materials. Fixture
dimension tolerances for locating the button must allow
for expansion during soldering as well as allowing for
button clearance.
HEATING TECHNIQUES
The following four heating methods have their advantages and disadvantages depending on volume of
buttons to be soldered.
1. Belt Furnaces readily handle large or small volumes
and are adaptable to establishment of. "on-line"
assembly since a variable belt speed sets the run
rate. Individual furnace zone controls make 'excellent
temperature control possible.
2. Flame Soldering involves the directing of natural
gas flame jets at the base of a heatsink as the heatsink is indexed to various 10adinlJ'heatinlJ'coolinlJ'
unloading positions_ This is the most economical
labor method of soldering large volumes. Flame
soldering offers good temperature control but requires sophisticated temperature monitoring systems
such as infrared.

Rectifier Device Data

MR2500 Series

ASSEMBLY AND SOLDERING INFORMATION (continuedl
3. Ovens are good for batch soldering and are produc·
tion limited. There are handling problems because
of slow cooling. Response time is load dependent,
being a function of the watt rating of the oven and
the mass of parts. Large ovens may not give an
acceptable temperature gradient. Capital cost is low
compared to belt. furnaces and flame soldering.
4. Hot Plates are good for soldering small quantities of
prototype devices. Temperature control is fair with
overshoot common because of the exposed heating
surface. Solder flow and positioning can be cor·
rected during soldering since the assembly is exposed.
Investment cost is very low.
Regardless of the heating method used, a soldering
'profile giving the time·temperature relationship of the
particular method must be determined to assure proper
soldering. Profiling must be performed on a scheduled
basis to minimize poor soldering. The time· temperature
relationship will change depending on the heating method used.

SOLDER PROCESS EVALUATION
Characteristics to look for when setting up the solder·
ing process:
I Overtemperature is indicated by anyone or all three
of the fall owing observations.
1. Remelting of the solder inside the button rectifier
shows the temperature has exceeded 285 0 C and is
noted by "islands" of shiny solder and solder
dewetting when a unit is broken apart.
2. Cracked die inside the button may be observed by a
moving reverse oscilloscope trace when pressure is
applied to the unit.
3. Cracked plastic may be caused by thermal shock as
well as overtemperature so cooling rate should
also be checked.
II Cold soldering gives a grainy appearance and solder
build·up without a smooth continuous solder fillet. The
temperature must be adjusted until the proper solder
fillet is obtained within the maximum temperature
limits.
III Incomplete solder fillets result from insufficient solder
or parts not making proper contact.
IV Tilted buttons can cause a void in the solder between
the heatsink and button rectifier which will result in
poor heat transfer during operation. An eight degree
tilt is a suggested maximum value.
V Plating problems require a knowledge of plating
operations for complete understanding of observed
deficiencies.

Rectifier Device Data

1. Peeling or plating separation is generally seen when
a button is broken away for solder inspection. If
heatsink or terminal base metal is present the
plating is poor and must be corrected.
2. Thin plating allows the solder to penetrate through
to the base metal and can give a poor connection.
A suggested minimum plating thickness is 300
microinches.
3. Contaminated soldering surfaces may out· gas and
cause non·wetting resulting in voids in the solder
connection. The exact cause is not always readily
apparent and can be because of:
(a) improper plating
(b) mishandling of parts
(c) improper and/or excessive storage time

SOLDER PROCESSMONITORING
Continuous monitoring of the soldering process must
be established to minimize potential problems. All parts
used in the soldering operation should be sampled on a lot
by lot basis by assembly of a controlled sample. Evaluate
the control sample by break·apart tests to view the solder
connections, by physical strength tests and by dimensional
characteristics for part mating.
A shear test is a suggested way of testing the. solder
bond strength.

POST SOLDERING OPERATION CONSIDERATIONS
After soldering, the completed assembly must be unloaded, washed and inspected.
Unloading must be done carefully to avoid unnecessary
stress. Assembly fixtures should be cooled to room
temperature so solder profiles are not affected.
Washing is mandatory if an acid flux is used because
of its ionic and corrosive nature. Wash the assemblies
in agitated hot water and detergent for three to five
minutes. After washing; rinse, blow off excessive water
and bake 30 minutes at 1500 C to remove trapped
moisture.
Inspection should be both electrical and physical. Any
rejects can be reworked as required.
SUMMARY
The Button Rectifier is an excellent building block for
specialized applications. The prime example of its use is
the output bridge of the automative alternator where
millions are used each year. Although the material pre·
sented here is not all inclusive, primary considerations for
use are presented. For further information, contact the
nearest Motorola Sales Office or franchised distributor.

5-17

•

I

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Complementary Medium
Current Silicon Rectifiers

MR4422CT
MR4422CTR

For Linear Power Supply Applications
· .. using monolithic silicon technology for perfect matching of diodes
in center tap configuration. These devices have the following features:
•
•
•
•
•

Low Forward Voltage Drop
Soft Reverse Recovery for Low Noise
High Surge Current Capability
150°C Operating Junction Temperature
Direct Replacement for Varo R711 and R711 A

POWER RECTIFIERS
30 AMPERES
100 VOLTS

Mechanical Characteristics
• Case: Welded Steel can, hermetically sealed
• Weight: 11 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for
10 Seconds
• Shipped 100 units per foam tray
• Marking: R4422T, R4422R

•

::!J-oCASE
MR4422CT

CASE~~

CASE 1-07
(TO-204AA)

MR4422CTR
MAXIMUM RATINGS (PER LEG)
Symbol

Max

Unit

VRRM
VRWM
VR

100

Volts

IF(AV)

15
30

Amps

Poak Repetitive Forward Current, Per Diode Leg
(Rated VR, Square Wave, 20 kHz) TC 125°C

IFRM

30

Amps

Nonrepelilive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

400

Amps

Peak Repetitive Reverse Surge Current (2.0 J.lS, 1.0 kHz)

IRRM

2.0

Amps

TJ

-65 to +150

°C

Tstg

-65 to +175

°C

Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC 125'CPer Device

Per Leg

=

=

Oporating Junction Temperature
Storage Temperature

THERMAL CHARACTERISTICS (PER LEG)
Thermal Resistance -

Junction to Case

ELECTRICAL CHARACTERISTICS (PER LEG)
Maximum Instantaneous Forward Voltage (1)
(IF 15 Amps, TC 25'C)
(IF 10 Amps, TC 125°C)

iF

Maximum Instantaneous Reverse Current (1)
(Rated de Voltage, TC 25°C)
(Rated de Voltage, TC 125°C)

iR

=
=

=
=

=
=

Volts
1.2
1.1
mA
1.0
250

(1) Pulse Test: Pulse Width = 3OO~, Duty Cycle:; 2.0%.

Rev!

5-18

Rectifier Device Data

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA

Advance Information

MR2535L
MR2535S

Overvoltage
Transient Suppressors
· .. designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standard
rectifiers or reverse mode as power avalanche rectifier and will protect electronic equipment from overvoltage conditions.
•
•
•
•

MEDIUM CURRENT
OVERVOLTAGE
TRANSIENT
SUPPRESSORS

Avalanche Voltage 24 to 32 Volts
High Power Capability
Economical
Increased Capacity by Parallel Operation

Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 2.5 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily
Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Polarity: cathode polarity band
• MR2535L shipped 1000 units per plastic bag. Available Tape and
Reeled, BOO units per reel by adding a "RL" suffix to the part number.
• MR2535S shipped pocket tape and reeled, 500 per 13" reel.
• Marking: MR2535L, MR2535S

CASE 194-{)4

~~~@
CASE 421A-01

MAXIMUM RATINGS
Rating
DC Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Repetitive Peak Reverse Surge Current
(TIme Constant = 10 ms, Duty Cycle" 1%, TC = 25°C) (See Figure 1)
Average Rectified Forward Current
(Single Phase, Resistive Load, 60 Hz, T C = 150°C)
Non-Repetitive Peak Surge Current
Surge Supplied at Rated Load Conditions
Hallwave, Single Phase
Operating and Storage Junction Temperature Range

Symbol

Value

Unit

VRRM
VRWM
VR

20

Volts

IRSM

110

Amps

10

35

Amps

IFSM

600

Amps

TJ, Tstg

-65 to +175

°C

Symbol

Max

Unit

RSJL I

7.5
10
13

'C/W

RWC

0.8'

°C/W

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Lead
Equal Length

@

Both Leads to Heat Sink,

Lead
Length
1/4"
3/8"
1/2"

Thermal Resistance Junction to Case
*TYPical
This document contains information on a new product. Specifications and Information herein are subject to change without notice.

Rev 2

Rectifier Device Data

5-19

•

I

MR2535L, MR2535S

ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (I)
Reverse Current

(VR

Breakdown Voltage (1)

=

Symbol

=100 Amps, TC =25'C)

=80 jlS)

Breakdown Voltage Temperature Coefficient

IR
V{BR)

24

V{BR)

-

V{BR)TC

Forward Voltage Temperature Coefficient @ IF

=10 mA

Min

-

VF

=20 Vdc, TC =25'C)
(lR =100 mAde, TC =25'C)

Breakdown Voltage (1)
(IR 90 Amp, T C 150'C, PW

=

(iF

VFTC

-

Max

Unit

1.1

Volts

200

nAdc

32

Volts

40

Volis

0.096-

'IoI'C

2-

mVI'C

(1) Pulse Test: Pulse Width s 3OO~, Duty Cycle s 2%.

'"Typica.l

IRSM(EXP)~
IRSM(EXP)

_

2
10

20

30

40

I

I

50

60

(TIME INms)

Figure 1. Surge Current Characteristics

•

5-20

Rectifier Device Data

Section 6
Tape and Reell
Packaging Specifications

II

Rectifier Device Data

Tape and ReeVPackaging Specifications
6-1

Tape and Reel Specifications
and Packaging Specifications
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
cavity for the product when sealed with the "peel-back" cover tape.
.
•
•
•
•
•

Two Reel Sizes Available (7" and 13,,)
Used for Automatic Pick and Place Feed Systems
Minimizes Product Handling
EIA481,-1,-2
SOO-123, SC-59, SC-70/S0T-323, SOT-23, SOT-143
in 8 mmTape

• S0-8, OPTO S0-8, SOT-223, 5MB in 12 mm Tape
• OPAK, S0-14, S0-16, SMC in 16 mm Tape
• 02PAK, 6-Pin Optoisolators in 24 mm Tape

Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual
reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is
one full reel for each line item, and orders are required to be in increments of the single reel quantity.

S00-123

SC-59, SC-70/s0T-323, SOT-23

Smm

SOT-223
12mm

•

Smm

SO-8, OPTO S0-8

S0-14,16

12mm

16mm

DPAK
16mm

SOT-143

Smm

5MB
12mm

SMC
16mm

6-Pln Optoisofators
24mm

24mm
00000000000 00000

DDDD

Tape and Reel/Packaging Specifications
6-2

DIRECTION
OF FEED

Rectifier Device Data

EMBOSSED TAPE AND REEL ORDERING INFORMATION

Package

Tape Width
(mm)

Pitch
mm
(inch)

Reel Size
mm
(inch)

Devices Per Reel
and Minimum
Order Quantity

Device
Suffix

OPAK

16

8.0 ± 0.1 (.315 ± .004)

330

(13)

2,500

T4

02PAK

24

16.0 ± 0.1 (.630 ± .004)

330

(13)

800

T4

SC-59

8

4.0 ± 0.1 (.157 ± .004)

178

(7)

3,000

Tl

SC-70/S0T-323

8
8

4.0±0.1 (.157±.004)

178
330

(7)
(13)

3,000
10,000

Tl
T3
T3

5MB

12

8.0±0.1 (.315±.004)

330

(13)

2,500

SMC

16

8.0±0.1 (.315±.004)

330

(13)

2,500

T3

SO-8, OPTO SO-8

12
12

8.0±0.1 (.315±.004)

178
330

(7)
(13)

500
2,500

Rl
A2

SO-14

16
16

8.0±0.1 (.315±.004)

178
330

(7)
(13)

500
2,500

Al
A2

SO-16

16
16

8.0±0.1 (.315±.004)

178
330

(7)
(13)

500
2,500

Al
A2

SOO-123

8
8

4.0±0.1 (.157±.004)

178
330

(7)
(13)

3,000
10,000

T1
T3

SOT-23

8
8

4.0 ± 0.1 (.157 ± .004)

178
330

(7)
(13)

3,000
10,000

Tl
T3

SOT-l43

8
8

4.0 ± 0.1 (.157 ± .004)

178
330

(7)
(13)

3,000
10,000

Tl
T3

SOT-223

12
12

8.0 ± 0.1 (.315 ± .004)

178
330

(7)
(13)

1,000
4,000

Tl
T3

6-Pin Optoisolators

24

12.0±0.1 (.472±.004)

330

(13)

1000

A2

•

Rectifier Device Data

Tape and ReeVPackaging Specifications
6-3

EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS

0,
For Componenls
2.0 mm x 1.2 mm and Larger

For Machine Relerence Only
Including Draft and RADII
Concentric Around BO

User Direction 01 Feed
• Top Cover Tape
Thickness (I,)
O.IOmm
(.004") Max.

Bar Code Label
RMin
Tape and Components
Shall Pass Around Radius "R'
Without Damage

Typical Component
Cavity Center Line

II

Tape
Imm
(.0391 Max

'I" - -

250 mm

---~

1------------'-----'----'- (9.843")

Typical Component
Center Line

Camber (Top View)
Allowable Cambar To Be I mml1 00 mm Nonaccumulative Over 250 mm

DIMENSIONS
Tape
SIze

8, M..

D

D,

E

F

K

Po

P2

RMln

TMu

WMu

Bmm

4.SSmm
(.179")

1.0 Min
(.039")

1.75tO.l mm
(.069t.004")

3.5tO.OS mm
(.13B±.002")

2.4mm Max
(.094")

4.0t0.1 mm
(.157±.O04")

2.0tO.l mm
(.079t.002")

2Smm
(.9B")

O.Smm
(.024")

83mm

12mm

B.2mm
(.S23")

1.5+0.1 mm
-0.0
(.059 +.004"
-0.0)

5.5tO.05mm
(.217±.002")

6.4 mm Max
(.252")

16mm

12.1 mm
(.476")

7.StO.l0mm
(.295± .004")

7.9 mm Max
(.SII")

16.3mm
(.642")

24mm

20.1mm
(.791")

11.S±O.1 mm
(.453±.0041

11.9 mm Max
(.468")

24.Smm
(.957")

I I.S mm Min
(.060")

I--SOmm
(1.IB")

(.327")
12t.SOmm
(.470t.012")

Metne dimensions govern - English are In parentheses for reference only.
NOTE 1: AO. 80. and Ko are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,
the component cannot rotate more than 100 within the determined cavity.

NOTE 2: If 81 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders.
NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 6-3.

Tape and Reel/Packaging Specifications
6-4

Rectifier Device Data

EMBOSSED TAPE AND REEL DATA FOR DISCRETES

1
7
~1!.-1.5mmMln
I
(1 /~~,,(.061
(207·2T)m~in (~\

A

. 95

~__ /

-1

I-- TMax
I Outside Dimension
Measured at Edge

13.0mm±O.5mm
(.512"±.002"

____

~

1

50mtMin
,.-,1 _ _
(1._96.,-9")
1

Full RadiUS

Inside Dimension
Measured Near Hub

G

TMax

Size

A Max

8mm

330mm
(12.992")

8.4 mm + 1.5 mm, -0.0
(.33" + .059", -0.00)

14.4 mm
(.56',

12mm

330mm
(12.992")

12.4 mm + 2.0 mm, -0.0
(.49" + .079", -0.00)

18.4mm
(.72")

16mm

360mm
(14.173,,)

16.4 mm + 2.0 mm, -0.0
(.646" + .078", -0.00)

22.4 mm
(.882")

24mm

360mm
(14.173,,)

24.4 mm + 2.0 mm, -0.0
(.961" + .070", -0.00)

30.4mm
(1.197")

•

Reel Dimensions
Metric Dimensions Govern - English are in parentheses for reference only

Rectifier Device Data

Tape and Reel/Packaging Specifications

6-5

LEAD TAPE PACKAGING STANDARDS FOR AXIAL-LEAD COMPONENTS

Product
Category

Case Type

Device
Title
Suffix

MPQ
Quantity
Per Reel
(Item 3.3.7)

Component
Spacing
A Dimension

Tape
Spacing
SDlmenslon

Reel
Dimension
C

Reel
Dimension
o (Max)

MaxOfi
Alignment
E

4000

0.2 +/- 0.015

2.062 +/- 0.059

3

14

0.047

Case 17-02

Surmetic 40 &
600WallTVS

RL

Case 41A-02

1500 Wall TVS

RL4

1500

0.4 +/-0.02

2.062 +/- 0.059

3

14

0.047

Case 51-02

00-7 Glass
(For Reference only)

RL

3000

0.2 +/-0.02

2.062 +/- 0.059

3

14

0.047

Case 59-03

00-41 Glass &
00-41 Surmetic 30

RL

6000

0.2 +/- 0.015

2.062 +/- 0.059

3

14

0.047

Case 59-04

500WallTVS

RL

5000

0.2 +/-0.02

2.062 +/- 0.059

3

14

0.047

RL

800

0.4+/-0.02

1.875 +/- 0.059

3

14

0.047

Rectifier

Rectifier
Case 194-04

110 Amp TVS
(Automotive)
Rectifier

Case 267-02

Rectifier

RL

1500

0.4+/-0.02

2.062 +/- 0.059

3

14

0.047

Case 299-02

00-35 Glass

RL

5000

0.2 +/-0.02

2.062 +/- 0.059

3

14

0.047

Table 1. Packaging Details (all dimensions in inches)

Kraft Paper

II

Item 3.1.1
Max Off
Alignment
E

Container

Tape, Blue
Item 3.2
(Cathode)

•

Item 3.3.5
Both Sides

Tape, White
Item 3.2
(Anode)

Figure 1. Reel Packing

-I-j

02

0.250

-~ Item 3.3.2
_0.03 1
Item 3.3.5

Figure 2. Component Spacing

1.188

~

'9-1

item 3.4

k.J
C

Figure 3. Reel Dimensions

Tape and Reel/Packaging Specifications
~

Rectifier Device Data

Section 7
Surface Mount Information

•

Rectifier Device Data

Surface Mount Information
7-1

INFORMATION FOR USING SURFACE MOUNT PACKAGES
RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprintforthe semiconductor packages must be
the correct size to ensure proper solder connection interface
between the board and the package. With the correct pad

geometry.. the packages will self align when subjected to a
solder reflow process.
,"

POWER DISSIPATION FOR A SURFACE MOUNT DEVICE
The power dissipation for a surface mount device is a
function of the drain/collector pad size. These can vary from
the minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a surface
mount device is determined by T J(max), the maximum rated
junction temperature of the die, RaJA, the thermal resistance
from the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data sheet,
Po can be calculated as follows:
PO=

TJ(max)-TA
RaJA

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device. For example, for
a SOT-223 device, Po is calculated as follows.
Po =

•

15~;~oC~oc

160

i...,

140

~~
Zo

j5L

Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad"'. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

t

I

+

a: CD

"":;:
«
:;:0

j

1.5 Watts

war
\. V
r-- N-l

ffi I- 100
i!=
~

TA·25°C

I

0,8Waj

\

gj
~ 120
w_

I

1

t-- r-

'Mounted on the 0PAK lootprint

~
0.4
0,6
0.8
1,0
A, AREA (SQUARE INCHES)
Figure 1. Thermal Resistance versus Drain Pad
Area for the SOT-223 Package (Typical)

80
0,0

= 800 milliwatts

The 156°CIW for the SOT-223 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 800 milliwatts. There
are other alternatives to achieving higher power dissipation
from the surface mount packages, One is to increase the area
of the drainlcollector pad. By increasing the area of the
drainlcollector pad, the power dissipation can be increased.
Although the power dissipation can almost be doubled with
this method, area is taken up on the printed circuit board which
can defeat the purpose of using surface mount technology.
For example, a graph of RaJA versus drain pad area is shown
in Figures 1, 2 and 3.

I
Board Material. 0,0625"
G-10IFR-4, 202 Copper

0,2

Iloard !.iaterial • 0,0625"
G-10/FR-4, 2 02 copr

i\

/1.7 Watts

~/

0

0

TA·25°C

\
\

/3,OWaus

'V

'"

0

-t-

V
........... I&:!:

5,OWatls

I
10

4
6
A, AREA (SQUARE INCHES)

Figure 2. Thermal Resistance versus Drain Pad
Area for the DPAK Package (lYplcal)

Isoard Mkterial • b:0625" I
G-10/FR-4, 2 02 Copper

TA·25°C

. / 2,5 Watts

I
I

./'
./ 3.5Watts

V

'\

"-V

I
V5WaUs

I
I

4
6
8
10
12
14
16
A, AREA (SQUARE INCHES)
Figure 3. Thermal Resistance versus Drain Pad
Area for the I)2PAK Package (lYplcal)

Surface Mount Information

7-2

Rectifier Oevice Oata

SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. Solder
stencils are used to screen the optimum amount. These
stencils are typically 0.008 inches thick and may be made of
brass or stainless steel. For packages such as the SC-59,
SG-70/S0T-323, SOD-123, SOT-23, SOT-143, SOT-223,
SO-8, SO-14, S0-16, and 5MB/SMC diode packages, the
stencil opening should be the same as the pad size or a 1:1
registration. This is not the case with the DPAK and D2PAK
pac~ages. If a 1:1 opening is used to screen solder onto the
drain pad, misalignment and/or 'tombstoning" may occur due
to an excess of solder. For these two packages, the opening
in the stencil for the paste should be approximately 50% of the
tab area. The opening for the leads is still a 1:1 registration.
Figure 4 shows a typical stencil for the DPAK and D2PAK
packages. The pattern of the opening in the stencil for the

drain pad is not critical as long as it allows approximately 50%
of the pad to be covered with paste.

SOLDER PASTE
OPENINGS

D

STENCIL

Figure 4. Typical Stencil for OPAK and
02PAK Packages

SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.'
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 1DoC.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.

Rectifier Device Data

• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used since the use of forced
cooling will increase the temperature gradient and will
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
• Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
• Due to shadowing and the inability to set the wave height to
incorporate other surface mount components, the D2PAK is
not recommended for wave soldering.

•

Surface Mount Information
7-3

TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
experienced on the surface of a test board at or near a central
settings that will give the desired heat pattem. The operator
solder joint. The two profiles are based on a high density and
must set temperatures for several heating zones and a figure
a low density board. The Vitronics SMD310 convectionlinfor belt speed. Taken together, these control settings make up
frared rellow soldering system was used to generate this
a heating "prOfile" for that particular circuit board. On machines
profile. The type of solder used was 62136/2 Tin Lead Silver
controlled by a computer, the computer remembers these
with a melting point between 177-189°C. When this type of
profiles from one operating session to the next. Figure 5 shows
fumace is used for solder rellow work, the circuit boards and
a typical heating profile for use when soldering a surface
solder joints tend to heat first. The components on the board
mount device to a printed circuit board. This profile will vary
are then heated by conduction. The circuit board, because it
among soldering systems, but it is a good starting point.
has a large surface area, absorbs the thermal energy more
Factors that can affect the profile include the type of soldering
efficiently, then distributes this energy to the components.
system in use, density and types of components on the board,
Because of this effect, the main body of a component may be
type of solder used, and the type of board or substrate material
up to 30 degrees cooler than the adjacent solder
being used. This profile shows temperature versus time. The
joints.
line on the graph shows the actual temperature that might be

STEP 1
PREHEAT
ZONE 1
'RAMP'

200°C

STEP 2 STEP 3
VENT HEATING
'SOAK" ZONES 2 & 5
'RAMP'

I

STEP 4
HEATING
ZONES 3 & 6
'SOAK'

STEP 5
HEATING
ZONES 4 & 7
:SPIKE"

I

DESIRED CURVE FOR HIGH
MASS ASSEMBLIES

STEP 6
VENT

STEP 7
COOLING

1--

H

I

150°C
150°C

SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLy)

100"C

I

50°C

•

TIME (310 7 MINUTES TOTAL)

Figure 5.

Surface Mount Information
7-4

• TMAX
Typical Solder Heating Profile

Rectifier Device Data

Footprints for Soldering
L_

I.

ro

0.089
2.261

~

~_ J
3.8~

~I

_I

0

2.743

L

r-

I

2.159

1

0;0~9

5MB

I.....I

1 1

0;0~9

1

I

0;~~9

1

C::es)

50T-223

0.171
4.343

--i
I

ro 0
3.810

L

I·

0.110
2.794

-I

5MC

r

OPAK

•

r-~I

0.42
10.66 - - - - - -

L

D~ t
2.032

0.24
- - - - ~ 6.096

II~!

L--.l~
1

~ 10;~2

r- ~:~~ ~

02PAK

Rectifier Device Data

(i::eS)

D
I.

r-

2.36
0.093
4.19
0.165

500-123

Surface Mount Information

7-5

•

Surface Mount Information

7-6

Rectifier Device Data

Section 8

TO-220 Leadform Information

•
Rectifier Device Data

TO-220 Leadform Information

8-1

Leadform Options - TO-220 (Case 221 A)
•
•
•
•
•

Leadform options require assignment of a special part number before ordering.
Contact your local Motorola representative for special part number and pricing.
10,000 piece minimum quantity orders are required.
Leadform orders are non-cancellable after processing.
Leadforms apply to both Motorola Case 221A-04 and 221A-06 except as noted.

LEADFORMAS

LEADFORMBC

-e -+---.---.-

o
o

I

~~&
.100 REF.----+!

H-

r-I r-

rt+.20REF.

.736±.010

~

1

.620±.015

~-~

r

-lJ'

!

--l ~0.100TYP.

0.1~~

•

-

±rIT~
L

o

f=:=

/L

652

TQ-220 Leadform Information
8--2

CASE

B

A

221M6 0.880 Min. 0.840 Min .

250 ±.010

.095±.010

I

221A--04 0.950 Min. 0.880 Min.

d·
r 1
V~--~

MOUNTING
SURFACE

C\.rh,

LEADFORMAD

.930

UNDERSIDE
OF LEAD

1

SURFACE

LEADFORMAC

1.030

0.750 MAX.

~

~MOUNTING

I

.125± .010

r

±.015

'

r--

±'~~~O

~

1, I r- ±~~~5 -!
L~_'E---.-~=-=r-==~_~

UNDERSIDE

B

OF LEAD

n.095

BOTTOM
OF
HEATSINK

± .010

tt

.020
±.010

~A_:

Rectifier Device Data

TQ-220 Leadform Options (continued)
LEADFORMAN

-

LEADFORM BA

e

1!l
m~
CASE

A

B

221A-Q4 0.220 Min. 0.325 Min.

)(

221A-Q6 0.190 Min. 0.290 Min.

0.040 RAD

h
~ .285

MOUNTING
SURFACE

_

I

±0.015

~

.380

~2 ~I~
I

r--

± 0.015

.580
± .010

~

~

J..§§.

.-

±f

LB

.500

600

CASE

A

~~'~"'

221 A-Q4 0.325 Min .
221 A-Q6 0.290 Min.

.095±.010

7TV--L-!-,S

MOUNTING
SURFACE

Rectifier Device Data

f

0.020 RADj
TYP.

0.100
TYP.

4

II

I-

MOUNTING
SURFACE

0.586
0.616

LEADFORM AK .

UNDERSIDE
OF LEAD

\I

A

0.100TYP.
±0.020'---l

LEADFORMBL

-'-Q+~5
-T
L

1
I I "I
l--

.015-U

j

III~~

--i
~~
·1±.010

1.

.5to

.n5

±.010
~

±0.015

!

==1
.06R

.017 ]
REF

t.200REF

•

I--

MAX

--1 ~.015

TO-220 Leadform Information

8-3

r0-220 Leadform Options (continued)
LEADFORMAF

I - \!J - -.'EJI
I
±.02
660

'

I I

LEADFORMBS

&MOUNTING
.040 MIN.

- --

.557
(REF.)

SURFACE

~

~I I~
I

'--

/fLEAD

.050REF'~1k.100 REF. 2'~~ -1~ T
.200 REF.

LEADFORMBR

LEADFORMAU

CASE

A

221A-04 0.920 Min.
221A-06 0.885 Min.

-<;)-

1 L

O.OBOREF.

0.820
±0.015

Lc

•

0.170±0.015--j

T0-220 Leadform Information
8-4

Rectifier Device Data

TO-220 Leadform Options (continued)
LEADFORM BU

LEADFDRMBV

0.005
±0.005

m~
I

""ZJ~~ P+
094 + .01

UNDERSIDE

.005 ±.005 .

I

/I

MOUNTING
SURFACE

I

J4

---.J I--

L
I
-..!

0.102 ± 0.005

I---

0.680 ± 0.005

--11--.102±.003

LEADFORMBD

I:

LEADFORMDW

I±.01O

'OO"'~ 1:-"", 1J r-,'~o
~

Rectifier Device Dala

I~

•

.223
±.01O

T0-220 Leadfarm Inf a rmallan
8--5

TO-220 Leadform Options (continued)
LEADFORMBG

LEADFORMAJ

r
~~i·

050 REF.

.765;r
~
---II
±.01

.MZ..
±.004

.580

± .010

r~
+

•
T0-220 Leadform Information

8-6

. e Data
Rectifier Devlc

Section 9
Package Outline Dimensions
and Footprints

II

Rectifier Device Data

Package Outline Dimensions and Footprints

9-1

Package Outline Dimensions and Footprints
NCTES:
1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M,1982.
2. CONTROLLING DIMENSION'INCH.
a. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204M OUTlINE SHALL APPlV.
INCHES

DIM

MIN

1.550 REF

B
C
D
E
G

1.050
0.250 0.335
0.038 0.043
a.a55 0.070
O.430BSC

H
K

D.21S8SC
0.440 0.480

L
N

0.6658SC
0.830
0151
0.165
1.1S7BSC
0.131
0.188

Q
U

V
STYLE 1:
PIN t BASE
~ EMmER
CASE: COLLECTOR

STYLE 2:
PIN I. BASE
2. COlL£CTOR
CASE: EMmeR

STYLE a:
PIN t GATE
2. SOURCE
CASE: DRAIN

STYLE 4:
PIN t GROUND
,. INPUT
CASE: OUTPUT

STYLE 6:
PIN t GATE
2. EMmER
CASE: COLLECTOR

STYLE 7:
PINI. ANODE
2. OPEN
CASE: CATHODE

STYLES:

STYLE 9:
PIN t ANODE"
2. ANODEII2
CASE: CATHODE

PIN 1. CATHODE'1
2. CATHODEII2
CASE: ANODE

MAX

A

STYLES:
PIN 1. CATHODE
2. EXTERNAL TRIP/DELAY
CASE. ANODE

CASE 1-07
ISSUEZ

f

-II-

D2PL

f

1f!7100.25(O.010@ITI

NOTES:
1. DIMENSIONING AND TOlERANCING PER ANSI
Y14.5M,1982.
,. CONmOLLING DIMENSION: INCH.

W
SEATING
PLANE

v®1

M~_"'N'

-

Q®I

I-

0.43

10.:

0.66

16.1

U

•

STYLE1:
PIN 1. BASE
,. EMmER
CASE: COLLECTOR

STYLE':
PINt EMmER
2. BASE
CASE: COLLECTOR

STYLE 3:
PIN t ANODE
~ CATHODE

STYLE 4:
PIN 1. ANODE"
2 ANOOE#2
CASE: CATHODE

30.1

STYLE 5:
1. CATHODE"
2. CATHODE #2
CASE: ANODE

CASE 11-03
ISSUEG

Package Outline Dimensions and Footprints
9--2

Rectifier Device Data

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

NOTES:
1. DIMENSIONING AND TOLERANC1NG PER ANSI

YI4.5M,I982.
2. CONTROLLING DIMENSION: INCH.

MAX

DIM
A

12.82

1.

B

Q

C

0

_i,---=jr==C'-'':Ci~-rt-

]

F

6.35
1.53

E
F
J

K

11.09
10.28

1.91
10.72

1524
4.14

SEATING
PLANE

1.53
6.74

J

4.44

11.50
20.32
4.80
2.41
10.76

*

10 32UNF·2A

smE1:

smE2:

smE3:

TERM. 1. CATHODE
2. ANODE

TERM. 1. ANODE
2. CATHODE

TERM. 1. ANODE
2. ANODE

CASE 56-03
(00-4)
ISSUEG

NOTES:
1. POLARITY DENOTED BY CATHODE BAND.
2. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
DIM
A
B
0
F

K

MAX
5.20
2.71

0.86
1.27

INCHES
MIN
MAX
0.160 0205
0.080
0.028

0.107
0034
0050

1.100

•

CASE 59-03
(00-41)
ISSUEM

Rectifier Device Data

Package Outline Dimensions and Footprints

9--3

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

NOTES
1. POlARITY DENOTED BY CATHODE BAND.
2. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
DIM
A
B

0
K

MAX
6.60
3.05
0.86

INCHES
MIN
MAX
0.235 0.260
0.110

0.120

0.030

0.034

1.100

CASE 59-04
(00-41)
ISSUEM

}.[
t'

tc
fK

L2
-II-D

•

NOTES:
1. DIMENSIONING AND TOLEAANCING PER ANSI
Y14.5M,19B2.
2. CONTROLLING DIMENSION: INCH.

MlLUMETERS
DIM
A

STYLE 1:
PIN I. CATHODE
2. ANODE

MIN

MAX
11.43
8.89
7.82
1.42

STYLE 2:
PIN 1. ANODE
2. CATHODE

CASE 60-01
ISSUEE

Package Outline Dimensions and Footprints

9-4

Rectifier Device Data

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

DIM
A
B

D
F
M

MAX
869
445
5.64
6.25
5" NOM

INCHES
MIN
MAX
0.332 0342
0165 0.175
0218 0.222
0.234 0.246
SONQM

t
t

F

CASE 193-04
ISSUEJ

NOTES:
1. CATHODE SYMBOL ON PACKAGE.
DIM
A
B

0
K

MIN
8.43

5.94
1.27
25.15

MJ

25

INCHES
MAX
0342
024[;
0053
0.990 1010

MIN
0.332
0.234
0050

STYLE 1:
PIN 1. CATHODE
2. ANODE

II
CASE 194-04
ISSUE F

Rectifier Device Data

Package Outline Dimensions and Footprints

9-5

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
YI4.5M,I982.
2. CONTROlliNG DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE All
BODY AND LEAD IRREGULARITIES ARE
AllOWED.

F

B

T

IIlLUMETERS

Q

LL

fZr-

DIM
A
B
C
D
F

uJ

1 2 3

l,

MIN
14.48
9.66
4.07

0.64
3.61
2.42
2.80

G
H
J
K
L
N

0.46

0.500
0.045

12,70

0.190

4.83
2.54
2.04

Q

0.100

R
S

O.OBO
0.045
0.235
0.000
0.045

T
U
V
Z

D

0.018

1.15

0.050
0.80

STYLEt:
PIN 1.
2.
3.
••

BASE
COLLECTOR
EMmER
COllECTOR

STV\.E2:
PIN 1.
2.
3.
•.

BASE
EMmER
COLLECTOR
EMmER

STYLE 3:
PIN 1.
2.
3.
4.

CATHODE
ANODE
GATE
ANODE

STYLE.:
PIN 1.
2.
3.
4.

MAIN TERMINAL 1
MAIN TERMINAL2
GATE
MAIN TERMINAL 2

STYLE 5:
PINt
2.
3.
4.

GATE
DRAIN
SOURCE
DRAIN

STYLE 6:
PIN 1.
2.
3.
4.

ANODE
CATHODE
ANODE .
CATHODE

STYLE 7:
PIN 1.
2.
3.
4.

CATHODE
ANODE
CATHODE
ANODE

STYLE 8:
PIN 1.
Z
3.
4.

CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE

STYLE 9:
PIN 1.
2.
3.
•.

GATE
COLLECTOR
EMlnER
COLLECTOR

STYLE 10:
PIN 1.
Z
3.
••

GATE
SOURCE
DRAIN
SOURCE

STYLE 11:
PIN1.
2.
3.
4.

DRAIN
SOURCE
GATE
SOURCE

1.15
5.97
0.00
1.15

MAX
15.75
10.28

4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52

5.33
3.04
Z79
1.39
6.47
1.27

2.04

CASE 221 A·06
(TO-220AB)
ISSUEY

II

Package Outline Dimensions and Footprints
9--6

Rectifier Device Data

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI

YI4.5M,1982.

~!f
A~

+

t;d~
~
f--

F

2. CONTROlliNG DIMENSION: INCH.

f

\_3 ~

tu

11IR IlL
LJ

H

D-l~
_G

k-

L

STYLE 1:
PIN 1. CATHODE
Z NIA
3. ANODE
4. CATHODE

INCHES
MIN
MAX
0.595 0.620
0.380 0.405

DIM
A
B
C
D
F
G

0.160
0.025

H
J
K
L
Q

0.100

0035
0.147
0.210
0.130
0025
0.562
0.060
0.120

R

0.080
0.045
0.235
0.000

0.05
0.255
0.050

u

STYlE 2:
PINt
2.
3.
4.

0.190

0.142
0.190
0.110
0.018
0.500
0.045

0.110

MILUM ERS
MIN
MAX
15.11 1575
9.65 1029
4.06
4.82
0.64
0.89
3.61 . 373
4.83
5.33
2,79
3.30
0.46
0.84
12.70 14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.00
1.27

ANODE
NlA
CATHODE
ANODE

CASE 221 B-03
ISSUE B

NOTES:
1. DIMENSIONING AND TOlERANCING PER ANSI

VI4.5M.1982.
2. CONTROlliNG DIMENSION: INCH.
DIM
A
B

1.

G
N
L
D3PL

I

1$10.25(0.010) ® 8®1
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE

C

STYLE 2:
PIN 1. BASE
2. COllECTOR
3. EMITTER

D
F
G
H

J
K
L

N
Q

R
S

vi

U

STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE

STYlE 4:
PIN 1. CATHODE
2. ANODE
3. CATHODE

INCHES
MIN
MAX
O.
0.621
0.394
0.402
0181
0.189
0.02
0.034
0.129
0.121
O.I00BSC
0.1
0.129
0.018 0.025
0.500 0.562

0.045

0.060

O.200BSC
0126 0134
0.111
0.107
0.96 0.104
0.259 0267

STYlES:
PIN 1. CATHODE
2. ANODE
3 GATE

MllUMETERS
MAX
MIN
15.78 1597
1001
1021
4.60
4.80
067
086
308
327
254BSC
313
3.27
046
084
1270
14.27
1.14
1.52
50aBSC
3.40
321
272
2.81
244
2.
6.78
658

II

STYlEG:
PIN1. MTI
2. MT2
3. GATE

CASE 2210-02
ISSUED

Rectifier Device Data

Package Outline Dimensions and Footprints

9-7

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

NOTES:
1. DIMENSIONING AND TOlERANCING PER ANSI
Y14.5M,1982.
~

CONTROlliNG DIMENSION: INCH.
MILLIMETERS
DIM
MIN
MAX
0.621
A
15.78 15.97
10.01 10.21
8
0.394
0.181
4.60
480
C
0.026
0.67
0
0.86
F
0.121
3.27
3.08
0.100
2.5498C
G
H
0.123 0.129
3.13
3.27
0.46
J
0.018 0.025
0.64
K
0.500 0562 12.70 14.27
1.14
1.52
l
0.045 0.060
0.2008SC
5.08BSC
N
3.21
0.126 0.134
3.40
R
0.107 0.111
2.81
~72
0.OS6 0.104
2.44
2.64
0.259 0.267
6.!8
6.78
U

~

G
N
L

a

D2PL

1$1 0.25 (0.010)® Is®1 vi

STYLE1:
PIN 1. CATHODE
2. N/A
3. ANODE

CASE 221 E-01

ISSUE 0

TERMINAL'

In

NOTES:
1. DIMENSIONING AND TOlERANCING PER ANSI
V14.SM.1982.
2. DIMENSION P IS A DIAMETER.
3. CHAMFER OR UNDERCUT ON ONE OR BOTH
ENOS OF HEXAGONAL BASE IS OPTIONAL
4. ANGULAR ORIENTATION AND CONTOUR OF
TERMINAL ONE IS OPTIONAL
5. THREADS ARE PLATED.

~D

DIM
A

"h>=!,---r

B
E
F
J

2.92

0.115

10.72

0.422

0.156
0.220

Q

3.86
5.59
3.56

MAX
0.687
0.667
0.450
0.375
0.200
0.060
0.453

1.000

R

II

STYLE 1:
TERMINAL 1. CATHODE
2. ANODE (CASE)

632
4.45
20.16
2.26

0.140

0.249
0.175
0.794
0.089

STYLE 2:
TERMINAL 1. ANODE
2 CATHODE (CASE)

CASE 257-01

ISSUE 8

Package Outline Dimensions and Footprints
9-8

Rectifier Device Data

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

NOTES:
1. DIMENSIONING &TOLERANCING PER ANSI
Y14.SM.1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B

STYLE 1:
PIN 1. CATHODE
2. ANODE

CASE 267·02
ISSUEB

ejB

-y.;
D

NOTES:
1. DIMENSIONING AND TQLERANCING PER ANSI
Y14.5M,1ge2.
2. CONTROLLING DIMENSION: INCH.

1

1

1

DIM

I
MIN

0.370
B
0
K

0·L90
0.048
1.000

MAX
Q380
0.210
0.052

I
ETERS
MIN
MAX
9.40 9.65
4.83 5.33
'.22 1.32
25.40

-

STYLE':
PIN'. CATHODE
2. ANODE

•

l 0

~

2

CASE 267·03
ISSUEC

Rectifier Device Data

Package Outline Dimensions and Footprints

9-9

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

NOTES:
1. DIMENSlONING AND TOLERANCING PER ANSI
Y14.5M,1982.
2. CONTROlliNG DIMENSION: MILLIMETER.
DIM
A
B
C
D
E
G
H
J
K
L

a

S
U
V

STYlE 1:
PIN 1. BASE
2. COlLECTOR
3. EMmER
4. COLLECTOR

2.60
0.40
28.50

14.70
4.00
17.50
3.40
1.50

smE2:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE

CASE 3400-01
.ISSUE A

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M.1982
2. CONTROlliNG DIMENSION: MilliMETER.
DIM

A
B
C
D
E
G
H
J

K
L
Q

S
U
1

•

UAX
19.60
14.60
5.00
1.30
1.65
11.44
3.00
0.60
32.00
15.30
4.25
19.50
3.80
2.00

lNCHES
UIN
UAX
0.749 0.771
0.551 0.570
0.165 0.196
0.040 0.051
0.058 0.064
0.411 0.450
0.103 0.118
0.016 0.023
1.123 1.259
0.579 0.602
0.158 0.167
0.689 0.767
0.134 0.149
0.060 0.078

STYLE 1:
PIN 1. CATHODE
3. ANODE
4. CATHODE

CASE 340E-01
ISSUE 0

Package Outline Dimensions and Footprints
9-10

Rectifier Device Data

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

NOTES:
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,19B2.
5. CONTROLLING DIMENSION: MILLIMETER
MlLLIlIETERS
1M
A
B
C
D
E
F
G
H

J
K
L
P
Q

R
U
V

smEl:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAlN

STYLE 2:
•
PIN 1. ANODE 1
2. CATHODEIS)
3. ANODE2

STVLE3:
. PIN 1. BASE
2. COLLECTOR
3. EMmER

4. CATHODEIS)

4. COLlECTOR

MAX
211.40
15.44
4.70

21190
15.95
5.21

109
1.30
1.50
1.83
1.0
2.18
5.45BSC
2.56
2.87
0.48
O.
15.57 16.08
7.50
7.26
3.10
3.38
3.50
370
3.0
3.80
B
3.05
3.40

INCHES

MIN
0803
0.608
0.185
0.043

MAX
0.823
0628
0205

0.OS1
0.059 0004
0.071
0086
0.215BSC
0.101
0.Q19
.613

0.286
0122
.1
0.130
.2
0.120

0113

0.027
0833
0295
0.133
0.145
0.150
0.134

STYLE 4:
PIN1. GATE
2. COLLECTOR
3. EMmeR
4. COLLECTOR

CASE 340F-G3
ISSUEE

•
Rectifier Device Data

Package Outline Dimensions and Footprints
9-11

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)
POWERTAP MECHANICAL DATA
APPLIES OVER OPERATING TEMPERATURE

MAXIMUM MECHANICAL RATINGS
Terminal Penetration:
Terminal Torque:
Mounting Torque Outside Holes:
Mounting Torque Cenler Hole:
Seating Plane
Flatness

0.235 max
25-40 in-Ib max

~

C\6

30--40 in-Ib max

Vertical Pull
250 Ibs max

8-10 in-Ib max
1 mil perin.
(between mounting holes)

2 in. Lever Pull
50 Ibs max

Note: While the POWERTAP is capable of sustaining these vertical and levered
tensions, the intimate contact between POWERTAP and heat sink may be lost.
This could lead to thermal runaway. The use of very flexible leads is recommended
for the anode connections. Use of thennal grease is highly recommended.

MOUNTING PROCEDURE
The POWERTAP package requires special mounting considerations because of the long longitudinal axis of the
copper heat sink. It is important to follow the proper tightening sequence to avoid warping the heat sink, which can
reduce thermal contact between the POWERTAP and heat sink.
2-3 TURNS

STEP 1:
Locate the POWERTAP on the heat sink and start
mounting bolts into the threads by hand (2 or 3 turns).

I' ...•.

2-3 TURNS

~•• 'I

2-3 TURNS

STEP 2:
Finger tighten the center bolt. The bolt may catch on
the threads of the heat sink so it is important to make
sure the face of the bolt or washer is in contact with
the surface of the POWERTAP.

2-3 TURNS

FINGER-TIGHT

2-3 TURNS

~

Hf,:-\·,q

?tfC!ii :;:stNf§f W:::,',"

5-10IN-LB

FINGER-TIGHT

5-10IN-LB

30-40IN-LB

8-10IN-LB

30-40IN-LB

STEP 3:
TIghten each of the end bolts between 5 to lOin-lb.

STEP 4:
TIghten the center bolt between 8 to lOin-lb.

STEP 5:
Finally, tighten the end bolts between 30 to 40 in-lb.

W

!$!0 O.25(O.010)@!T!A @!B@!
N

II

Q 2PL

II'-.i

l

E

l±l ~lli'~G
CASE 357C-03
ISSUEC

Package Outline Dimensions and Footprints

9-12

NOTES'
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982.
2. CONTROlliNG DIMENSION. INCH.
3. TERMINAl PENETRATION. 5.97 (0.235) MAXIMUM.
DIU
A
B
C
E
F
G
H
N
Q

R
U
V
W

INCHES
MAX
MIN
3.635
0.700 0.810

3450

615
0.120
0.435
1.370
0.007

0.641)
010
0.445
1.380
0.030

114-2OUNC 2B

270 0285
31.50BSC
0600 0630
O. 0 0.375
0.170 0.190

MIlliMETERS
MIN
MAX

87.63
17.78
15.53
305
11.05
3400

92.33
2057
16.26
3.30

11.30
35.05

0.18
0.16
1f4-20UNC28

6.86
80.01

15.24
8.39
4.32

7.32

ssc

1600
9.52
482

Rectifier Device Data

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

r- 4.191~ 0.100C-~1
0.165

I

0.118

2.54

0.190 I - - _

D 0~~3 r
D --.l6·t

TO.243

4y6
L

(;::0')

DPAK
FOOTPRINT

NOTES1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982.
2. CONTROLLING DIMENSION' INCH.

DIM
A

•

C

D
E
F

a
H
J
K
L

3. EMlITER
4. COLLECTOR

STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE

4. DRAIN

STYLE 3:
PIN 1. ANODE
2. NtA
3. ANODE

4. CATHODE

STYLE 4:
PIN 1.
2.
3.
4.

CATHODE
ANODE
GATE
ANODE

E
MAX

S

O.090BSC
0.175 0.215
0.020 0.050

U
V

0020
0.030

Z

0.138

"
STYLEt:
PIN 1. BASE
2. COLLECTOR

IN
MIN

0.235 0.250
0250 0.265
0.086 0.094
0.027 0.035
0.033 0.040
0.037 0.047
O.lBOBSC
0.034 0.040
0.018 0.023
0.102 0.114

STYLES:
PIN t,
2.
3.
4.

0.050

m

1.19

Bse

0.B7
1.01
0.46
0.58
2.50
2.69
2.29BSC
4.45
5.46
0.51
127
0.51
0.77
127
351

GATE
ANODE
CATHODE
ANODE

CASE 369A·13
(DPAK)
ISSUEW

•
Rectifier Device Data

Package Outline Dimensions and Footprints

9-13

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

' - - 0.171 - - '
4.343
I

I

IO 0
a'r

O

.L

I·

0.110
2.794

~I

C::s)

SMC
FOOTPRINT

NOTES:
1. DIMENSIONING AND TO\.ERANCING PER ANSI
V14.5M.1982.

2. CONTROUING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
RS
A
B
C
D

O.
0.220
0~75

0.115

0.280
0.240
0.095
0.121

6.60
5.59
1.90
2.92

7.11
6.10
2A1
3.0

CASE 403-03
(SMC)
ISSUEB

•
Package Outline Dimensions and Footprints
9-14

Rectifier Device Data

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

0.089

I_

2.261

_I

TO 0
0.108

~

Cn:"s)

~
2.159

5MB
FOOTPRINT

NOTES:
1. D1MENSIONING AND TDLERANCING PER ANSI
Y14.5M,19822. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.

DIM
A
B
C
D
H
J
K
P
S

INCHES
M1N
MAX
0.160 0.180
0.130 0.150
0.075 0.095

C.on

0.083

0.0020 0.0060

0.006 0.012
0.030 0.050
0.020 REF
0205 0220

MILLIMETERS
MIN
MAX
4.0B
4.57
3.81
3.30
1.90
2.41
1.96
2.11
0.051 0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59

CASE 403A-03
(SMB)
ISSUEB

•
Rectifier Device Data

Package Outline Dimensions and Footprints
9-15

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

r

I~I

0.42, _ _

_ ___

10.66

L

2.032

f

0.24

- - - - ~ 6.096

II~

1
L-J~

I

~

D~

0
1j6!

r~:~~~

('::05)

D2PAK
FOOTPRINT

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.SM,1982.
2. CONTROLLING DIMENSION: INCH.

DIM
A
B
C
D
E
G
H
J

STYLE 1:
PIN 1.
2.
3.
4.

STYLE 2:
BASE
COLLECTOR
EMITTER
COLLECTOR

PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

STYLE 3:
PIN 1.
2.
3.
4.

INCHES
MIN
MAX
0.340 0.380
0.380

0.405

0.160

0.190

0.020 0035
0.045 0.065
O.100BSC
0.080 0.110
0.018 0.025

MIlliMETERS

MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
140
2.54BSC
2.03
2.79
0.46
0.64

K

0090

0.110

229

2.79

S
V

0.575
0.045

0.625
0.055

14.60

1588

1.14

1.40

ANODE
NlA
ANODE
CATHODE

CASE 418B·02
D2PAK
ISSUEB

II

Package Outline Dimensions and Footprints
9-16

Rectifier Device Data

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued)

i

A

~

:\'
.' ~-:1f

r

~t-

NOTES:
1. DIMENSIONING AND TOlERANCING PER ANSI
Y14.5M,1982.
2. CONTROLLING DIMENSION: INCH.

B

DIM
A
B
C
0
E
H

~

INCHES
MIN
MAX
0330 0342
0.270 0.090
0275
0290

0.218
0060

0.255

MILUMETERS
MIN
MAX
8.38
&69
7.37
686
6,98
7.37
,86
5,54
2,03
152
6.48
6.98

0,223
0,080
0.275

STYLE 1:
PIN 1. CATHODE

2, ANODE

co

r., H~
\
C

Ll:~

Loj

J

eL
CASE 421A-G1
ISSUE 0

NOTES:
1. DIMENSIONING AND TOlERANCING PER ANSI
YI4,5M,1982,
2, CONTROlLING DIMENSION: INCH,
MILLIMETERS
MIN
MAX
1.40
1.80

DIM
A

B
C

o

2.85
1.35
0.70

025

E
H
J
K

2.55
095
050

0.140

O.

000

0.10
0.15

355

3SS

STYLE 1:
PIN 1. CATHODE
2. ANODE

•

CASE 425-04
(SOD-123)
ISSUEC

Rectifier Device Data

Package Outline Dimensions and Footprints

9-17

PACKAGE OUTLINE DIMENSIONS AND FOOTPRINTS (continued) .

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y145M,1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

B

MILLIMETERS
MIN
MAX
31.50 31.70
7,80
820

C
D
E
F
G

4.10
14.90

4.30
15.10

30 10
38.00
400

.30
3820

1185

H
L

11.80

1220

890

M

12.60

9.10
12.80

0.464
0.350
0.496

N
P

25.20
1.85
410

2540
2.OS

Q

R
S

0.75

0.85

550

DIM

Q

A

Recommended screw torque: 1.3 ± 0.2 Nm
Maximum screw torque: 1.5 Nm

STYLEt
PIN 3.
4.
5.
6.

SOURCE
GATE
DRAIN
SOURCE2

STYLE 2.
PIN 1.
2.
3.
4.

CATHODE 1
ANODE 1
ANODE2
CATHODE2

INCHES
MIN
MAX
1.240 1.248
0.307 0.322
0161
0.169
0.586
1.496
0.157

0.590
1.193
1.503

0.480
0358
0.503

0.992

1000

0.076

0.080

0,157
0.030

0.033

0217

STYLE 3:
PIN 1. CATHODE 1
2. ANODE2
3. CATHODE2
4 ANODE 1

SOT-227B

•
Package Outline Dimensions and Footprints
9-18

Rectifier Device Data

Section 10
AR598: Avalanche Capability of
Today's Power Semiconductors

•
Rectifier Device Data

AR598
10-1

AR598
AVALANCHE CAPABILITY OF TODAY'S POWER
SEMICONDUCTORS
R Borras, P Aloisi, D Shumate'
MOTOROLA Semiconductors, France, USA'
Paper published at the EPE Conference '93, Brighton 9/93.
Abstract. Power semiconductors are used to switch high currents in fractions of a second and therefore belong
inherently to a world of voltage spikes. To avoid unnecessary breakdown voltage guard bands, new generations
of semiconductors are now avalanche rugged and characterized in avalanche energy.
This characterization is often far from application conditions and thus quite useless to the designer. It is easy to
verify that an energy rating is not the best approach to a ruggedness quantification because of avalanche energy
fluctuations with test conditions.
A physical and thermal analysis of the failure mechanisms leads to a new characterization method generating
easy-ta-use data for safe designs. The short-term avalanche capability will be discussed with an inSight of the
different technologies developed to meet these new ruggedness requirements.
Keywords. Avalanche, breakdown, unclamped inductive switching energy, safe operating areas.
INTRODUCTION
One obvious trend for new power electronic designs is to
work at very high switching frequencies in order to reduce
the volume and weight of all the capacitive and inductive ele·
ments. The consequence is that most applications today require switching very high currents in fractions of a
microsecond and therefore generate L x dlldt voltage spikes
due to parasitic inductance. Unfortunately these undesirable
voltage levels sometimes reach the breakdown voltage of
power semiconductors that are not intended to be used in
avalanche.
The necessity for avalanche rugged power semiconductors has clearly been perceived by many semiconductor
manufacturers who have come up with avalanche-energy
rated devices.
This paper will show the limits of an energy-based
characterization model. It will concentrate on three different
dovices: Ultra Fast recovery Rectifiers, Schottky Barrier
Rectifiers and MOSFETs. It will study their main failure
mechanisms and show the technological improvements that
guarantee an enhanced ruggedness.
This will lead to a new characterization that will help the designer choose correctly between overall cost and reliability.
LIMITS OF AN AVALANCHE ENERGY
CHARACTERIZATION

.U

Practically all the characterizations are based on the following Unclamped Inductive Switching (UIS) test circuit (fig 1) :
Vee

V

CC

BV.

.
I

I.

,,

,
Ie,'
,

"

Figure 1. Standard UIS Characterization Circuit.

AR598
10-2

The energy is first stored in inductor L by turning on tran·
sistor Q for a period of time proportional to the peak current
desired in the inductor. When Q is turned off, the inductor reverses its voltage and avalanches the Device Under Test until all its energy is transferred. The DUT can be a rectifier or a
MOSFET (the gate should always be shorted to the source).
The standard characterization method consists in increasing the peak current in the inductor until the device fails. The
energy that the device can sustain without failing becomes a
figure of merit of the ruggedness to avalanche:
Waval = 1/2 L Ipeak2 BV(DUT) 1 (BV(DUT) - Vcc)

[1]

The main limit of this method is that the energy level that
causes a failure in the DUT is not a constant but a function of
Land Vcc. This results of the fact that the avalanche duration
is function of the current decay slope (BV(DUT)-VCC)/L :

Table 1. Peak Current and Energy Causing Failures in a
1A, 1000V Ultra Fast Recovery Rectifier.
Inductor Value:
Peak Current:
Energy:

10mH
1.7A
l4mJ

50mH
O.9A
20mJ

100mH
O.8A
32mJ

Table 1 indicates that the failure is not caused by an energy (i.e. it is not independent of the avalanche duration) but
rather by a current level that has to be derated versus time:
the devices can sustain a low current for a long period of time
(high energy) but at high avalanche currents they will fail after a few microseconds (low energy).
Therefore, unless the designer has a parasitic inductance
of value L in his circuit, the standard characterization data
will be useless, or worse, it might lead to an overestimate of
the ruggedness of his application: because parasitic inductances are often an order of magnitude less than the test circuit inductance, the expected energy capability leads to
excessive current levels.

Rectifier Device Data

The UIS test circuit is very easy to implement: the only important point is that the transistor has to have a breakdown
voltage higher than the OUT. For low breakdown voltage devices, a MOSFET might be preferred to the bipolar transistor.
The advantages of using a MOSFET are multiple : it is a
more rugged device, it is much easier to drive and its switching characteristics can be controlled by adding a resistor in
series with the gate. It is mandatory to limit this switching
speed to avoid having an avalanche energy measurement
dependent on the gate drive (i.e. gate resistor and gate to
source voltage values).
Anyhow, it is possible to generate very useful information
with this UIS test circuit by varying the inductor value. It is
also very important to present the data independently of the
values of Vcc and L. One solution can be to plot the maximum peak current versus the avalanche duration (fig 2) :

This relationship can be added to figure 2 (see fig 3) :
lpeak (Al

l00mm~mm1

Ipeak (A)

l00mmmtlmll

Figure 3. figure 2 + equation [2].

,I

Thus the maximum peak current that can flow through the
parasitic inductance L is approximately 2SA instead of 58A
that would have resulted of using equation [1].

10._,..•.,.
II

! '"

:1

,I

;1

UNDERSTANDING THE FAILURE MECHANISMS

.!.:

,i

Physical Approach
The following microscope photographs show the failure
locations for an Ultra Fast Recovery Rectifier (UFR), a
Schottky Barrier Rectifier (SBR) and a MOSFET :

1(Jl5)

10

100

1000

10000

Figure 2. Maximum Peak Current versus Avalanche
Duration for a 15A, 60V MOSFET in an UIS Test Circuit.
The advantage of this new graph is that the designer can
easily calculate the safety margin of his application and he
will not be mislead by an energy value that depends on too
many different parameters. If he knows the value of the parasitic inductance in his circuit he will be able to determine its
maximum peak current.
For instance, let us assume that the designer uses the
15A, 60V MOSFET characterized in figure 2. This device
sustains 500mJ with an inductor of 75mH according to equation [1]. Its typical breakdown voltage is SOY.
If the supply voltage Vdd is 12V and the parasitic induc·
tance L is 250~H, then the avalanche duration and maximum
peak cu rrent are related by
Ipeak = t (BVOSS - VOO) / L

[2]

Figure 4. 4A, 1000V UFR Avalanche Failure.

Rectifier Oevice Oata

AR598
10-3

and becomes visible in the forward characteristic of the diode.
Finally, when the punchthrough reaches considerable dimensions, the device looks very similar to a low value resistor.
The failure does not always appear in the same region of
the die. For instance, high voltage UFRs have their punchthrough always located in a comer, MOSFETs often fail in the
corners or on the sides whereas SBRs have randomly located
failures.
Thermal Approach
Transient thermal response graphs generated by a standard 1>.VDS method show the junction temperature evolution
for forward and avalanche constant current conduction in a
MOSFET. These graphs (fig 7) prove that the silicon effiCiency during avalanche and forward currents are similar.
TJ('C)
300

II ~ II
600W
Forward

I

Figure 5. 25A, 35V SBR Avalanche Failure.

!

200

1

[s~

I
I
It

100

a
10

I
~
....~ -'1
'!""

100

!.

I
!
.jmlj J1Iii
I'
1

II

!

!
~

II
1000

JI
I
i!

!I

u
Ii
II

iI
iI

I(JIS)

10000

Figure 7. 15A, 60V MOSFET Transient Thermal
Response for 800W, 400W, 200W Avalanche and 600W
Forward Conduction.

Figure 6. 20A, 500V MOSFET Avalanche Failure.
These photographs show that the failure is generally a
punchthrough. The melt-through hole dimensions depend
on the current level and avalanche duration.
A close look at the electrical characteristics of failed rectifi·
ers on a curve tracer show three levels of degradation : low
stressed diodes have a normal forward characteristic but
show an unusual leakage current before entering breakdown
as if they had a high-value resistor in parallel: this resistance
can be explained by a small punchthrough. For medium degradation levels, the value of this pseudo-resistance decreases

Figure 7 can be used to generate a transient thermal resistance graph by plotting the temperature divided by the power
: the four graphs should then normally match. Some slight
differences show that the transient thermal resistance increases with the current level: i.e. the 800W curve (lOA
constant avalanche current) has a higher transient thermal
resistance than the 200W (2.5A). Therefore the thermal efficiency in a MOSFET is not perfectly homogeneous versus
the avalanche current.
A similar analysis on an UFR or an SBR shows poor thermal efficiency in avalanche. This can be shown by comparing the temperature rise after 1ms for forward and avalanche
conduction pulses of same power (400W) :
MOSFET 1>.Tdirect=160°C 1>.Tavalanche=180°C ratio=0.9
UFR

1>.Tdirect=120°C 1>.Tavalanche=175°C ratio=0.7

SBR

1>.Tdirect=100°C 1>.Tavalanche=150°C ratio=0.7

Electrical Approach
Considering the transient thermal responses of a device, it
is possible to simulate the instantaneous junction temperature for any sort of power pulse.

II
AR598

lCl--4

Rectifier Device Data

Conducting this simulation on the data generated by the
UIS test it is possible to show that all the parts fail when they
reach a "critical temperature" (fig 8) :

device at a constant current and presenting the maximum
current capability versus time:

Figure 9. Constant Current Characterization Circuit.

11)as)

Figure 8. 15A, 60V MOSFET Failure Points and Critical
• Temperature for different Inductor Values.
At these critical temperatures the intrinsic carrier concentration, ni, reaches levels close to those of the doping
concentrations :
ni is proportional to

T3/2 e - Eg/2kT

[3]

where T is the absolute temperature, Eg the energy bandgap
and k is Boltzmann's constant.
At 200°C, ni exceeds 210 14 cm-3 which corresponds to a
1000V material epitaxy concentration level. This means that
'when the junction temperature reaches 300°C, the rectifier
looks more like a resistor than a diode. A local thermal runaway then generates a hot spot and a punchthrough as can
be seen in figures 4, 5 and 6.
This failure analysis has shown that the failure mechanism
is essentially thermal: the devices are heated by the BVR x
IR power dissipation. Unfortunately, this power does not remain constant because the UIS circuit generates a linear current decay and also the breakdown voltage varies wit~ the
current level and with the junction temperature.
In order to have a complete characterization of the device
it is interesting to see how it reacts to a constant avalanche
current and different ambient temperatures.

Different test circuits similar to figure 9 have been proposed by Gauen (1) and Pshaenich (2). Some unexpected
failures in MOSFETs suggest that the DUT,shouid always be
referenced to ground. Unlike UFRs and SBRs, MOSFETs
react differently whether they are tied to ground or floating
around a fluctuating voltage. Many floating transistors fail at
very low stress levels probably due to capacitive coupled
currents that turn-on the internal paraSitic transistor.
The test circuit shown in figure 9 sets a constant avalanche current through the device until it fails, this duration
can then be plotted for different current levels. This generates a graph similar to the UIS method, except that the current is constant instead of decreasing linearly.
This leads to the definition of a "Safe Avalanching Area"
(fig 10) that will guarantee a short-term reliability if the device is used within this clearly defined area.

NEW CHARACTERIZATION METHOD PROPOSAL
During the prototype phase', it is easier for the designer to
measure the avalanche current and duration than the circuit's parasitic inductance. Therefore, the characterization
should be based'on easy to measure parameters. The failure
analysis proves that the main cause of degradation is the inability to handle an excessive power (avalanche current IR
multiplied by breakdown voltage BVR). A proper characterization should present the maximum power capability versus
time.
As the avalanche voltage varies only slightly with the current level, the proposed method is based on avalanching a

Rectifier Device Data

Figure 10. lA, 30V SBR'Save Avalanching Area.
This graph gives the maximum avalanche duration for any
value of avalanche current.
The Safe Avalanching Area is generated by taking a safety
margin from the failure points. Another approach would be to
dynamically measure the temperature as in figure 7 and generate an area defined by a maximum allowable junction temperature.

AR598
10--5

II

As the failure mechanism is related to a peak junction temperature, it is necessary to give Safe Avalanching Areas for
different ambient temperatures (fig 11) :

where k is a constant function of the die size, the breakdown
voltage and other parameters. Constant A can be extracted
from figure 12 and similar figures for UFRs and MOSFETs :
IR = k T -0.55

%S"C
15

i\
6O"C

10

,"

TJ = TA + PD RthJA(t),

!\ '\

OO"C

o

[6)

or
PD = (TJ-TA) 1 RthJA(t)

r--...

where:
T J, TA are the junction and ambient temperatures,
PD is the power dissipation,
RthJA(t) is the transient thermal resistance.

t.........
i"- t--" t"--.... r---.. r-o

[5)

Relation [5] is a consequence of heat propagation laws
which explain that the temperature in a semiconductor rises
proportionally to t 0.5 (for a constant current pulse and as
long as the temperature remains within the Silicon die). This
can be seen in any transient thermal resistance graph.
A standard thermal calculation shows that:

-- r--

1000

500

Given a constant power pulse and for values of t less than
1ms, [6) is equivalent to :

t (ju)
2000

1500

IR BVR = (TJ-TA) 1 (k t 0.5)

[7)

so
Figure 11. 25A, 35V SBR Safe Avalanching Areas for
different ambient temperatures.
When the data in figures 10 and 11 is plotted on log/log
axes instead of lin/log or lin/lin, an interesting feature appears (fig 12) :

IR(A)
100

:

:

. ··
i
~·

:

,
I
!

I

;
I

·!

i

!

I

1
100

1

i

i

I I

I

I

10

I

I!

"'
1000

(k:constant)

[7bis]

This rule of thumb works out much better than the, unfortunately too common, 1/2 L 12 law.
For example, when applied to the example following figure
2 (which is UIS and not Constant Current generated) to determine the maximum peak current in a 250l1H inductor and
by chOOSing for Instance the 9A,500l1s point, relation [7bis]
can be written:

!I

%S"C

I.

This relation is similar to [5). For avalanche durations of
less than 500l1s the heat propagates within the silicon only.
For longer durations the heat reaches the solder and the
package so the propagation characteristics are modified .
The devices heat faster or slower and therefore the IR=f(t)
slope changes. Empirical data shows that A in relation [4) remains within -O.S to -D.6.
Relation [7) can also be expressed by :
IR2 t = k

,
I

I

IR = kt-D·5

9A2 500!1S = Ipeak2 IOO!1S

6O"C
lOO"C

This gives a conservative value of 20A instead of a real
value of 2BA whereas the 1/2 L 12 method generates a catastrophic SBA value.

TTl

t (ju)

TECHNOLOGYTRADEOFFS

10000

Figure 12. figure 12 on log/log axes.
Figure 12 shows a linear relationship between current and
time on a logllog plot. This means that:
so

10g(IR)

=A log(t) + B,

IR=kTA

[4)

Ultra Fast Recovery Rectifiers
The UFR devices are based on a Mesa technology (fig 13)
with a Phosphorus doped (n-type) substrate. The heavily
doped N+ substrate is followed by a lighter N- epitaxial layer.
The P+ is diffused into the epitaxy to form the P-N junction.
The passivation follows the perimeter of the die.

II
AR59B

1!l-6

Rectifier Device Data

guardrina
S - Epitaxy
~ +

Figure 13. UFR Technology, Profile and Electric Field.
The epitaxy characteristics determine the major electrical
parameters of the device. A designed experiment was con·
ducted varying the epitaxy thickness and resistivity. The output responses were the forward voltage, the breakdown
voltage, the leakage current and the avalanche capability. A
wide range of epitaxy materials was chosen to determine the
general trends for all the effects.
Although the results were predictable for the static parameters, the avalanche capability results were not.
A key issue is the electric field extension. If it terminates
before the substrate the avalanche capability increases by
increasing the epitaxy resistivity. If the field extends into the
N+ region (reach-through) the avalanche capability is considerably reduced.
The avalanche capability is proportional to the die size and
not to the perimeter. This confirms that the avalanche current
is vertical and not only a surface or passivation related phenomenon.
The failures always occur in the corners where the electric
field is most critical. These failures are essentially function of
the thermal characteristics of the device when conducting
avalanche currents. Therefore the avalanche capability decreases when the ambient temperature increases and the
failures can normally be predicted by Safe Avalanching
Areas such as figure 12.
Some unexpected defects though can radically degrade
the avalanche capability. Defects in the epi such as pipes
cause premature failures but can often be screened by a
leakage current test that eliminates soft breakdown devices.
Defects in the passivation can generate parasitic oscillations
during breakdown.
Schottky Rectifiers
Due to P-N junction guard rings, SSR devices are very
similar to UFRs when conducting avalanche currents. These
rectifiers have very low breakdown voltages and therefore
very thin epitaxy layers. This probably explains that the avalanche-related failures occur anywhere on the die surface:
the thin N- region is relatively more heterogeneous with respect to avalanche capability and thermal dissipation than a
thick UFR epitaxy.

Substrate

Figure 14. SBR Technology with P-N Guard Rings

MOSFETs
MOSFETs can also be compared to UFRs as long as the
internal parasitic bipolar transistor (due to the P-tub) does
not turn-on. The latest MOSFET generations reduce the Presistance to avoid biasing this NPN.
While analyzing different constant current test circuits, it
appeared that devices used in a floating configuration can
have very poor avalanche capabilities.
Due to their cellular technology, MOSFETs conduct very
efficiently avalanche currents. They can sustain avalanche
power levels close to those of forward conduction ratings.
CONCLUSION
The necessity of ct)aracterizing the avalanche capability of
power semiconductors has been explained. An analysis of
the standard UIS test circuit has shown the limits' of a characterization based on energy ratings. Throughout a discussion
of the main failure mechanisms, a new th'ermal approach has
been proposed to help designers set safety levels in their designs. This paper sets new standards for characterizing avalanche ruggedness.
Acknowledgements
The authors would like to thank Jean-Michel REYNES,
design engineer at MOTOROLA Toulouse, fot his help in understanding the failure mechanisms.
References
1. Gauen, K., 1987, "Specifying Power MOSFET Avalanche
Stress Capability", Power Technics Magazine January
2. Pshaenich, A., 1985, "Characterizing Overvoltage
Transient Suppressors", Em'&LG.~
International June/July
3. Cherniak, S., "A Review of Transients and The Means
of Suppression", MOTOROLA Application Note AN843
4. Wilhardt, J., "Transient Power Capability of Zener
Diodes", MOTOROLA Application Note AN784

II
Rectifier Device Data

AR598
10-7

•
AR598

10-8

Rectifier Device Data

Index and Cross Reference

Selector Guide
Schottky Data Sheets
Ultrafast Data Sheets
Standard and Fast Recovery
Data Sheets

•
•

•

Tape and Reell
Packaging Specifications

•

Surface Mount Information

•

TO-220 Leadform Options

•

Package Outline Dimensions
and Footprints

•

AR598: Avalanche Capability of
Today's Power Semiconductors
2PHX33042R-3 Printed in USA 10195 COURIER CO. 28229 20,000 Rectifiers YAABAA
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