2N5086, 2N5087, MMBT5087 Datasheet. Www.s Manuals.com. Fairchild

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PNP General Purpose Amplifier
3

• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.

2
SOT-23
1 Mark: 2Q

TO-92

1
1. Emitter 2. Base 3. Collector

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VCEO

Collector-Emitter Voltage

Parameter

Value
-50

VCBO

Collector-Base Voltage

-50

V

VEBO

Emitter-Base Voltage

-3.0

V

IC

Collector current

-100

mA

TJ, Tstg

Junction and Storage Temperature

-55 ~ +150

°C

- Continuous

Units
V

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta=25°C unless otherwise noted
Symbol

Parameter

Off Characteristics
Collector-Emitter Breakdown Voltage *
V(BR)CEO

Test Condition

Min.

Max.

Units

IC = -1.0mA, IB = 0

-50

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = -100µA, IE = 0

-50

V

ICEO

Collector Cutoff Current

VCB = -10V, IE = 0
VCB = -35V, IE = 0

-10
-50

nA
nA

ICBO

Emitter Cutoff Current

VEB = -3.0V, IC = 0

-50

nA

On Characteristics
hFE

DC Current Gain

IC = -100µA, VCE = -5.0V
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V

5086
5087
5086
5087
5086
5087

150
250
150
250
150
250

500
800

VCE(sat)

Collector-Emitter Saturation Voltage

IC = -10mA, IB = -1.0mA

-0.3

V

VBE(on)

Base-Emitter On Voltage

IC = -1.0mA, VCE = -5.0V

-0.85

V

Small Signal Characteristics
fT

Current Gain Bandwidth Product

IC = -500µA, VCE = -5.0V, f = 20MHz

Ccb

Collector-Base Capacitance

VCB = -5.0V, IE = 0, f = 100KHz

40

MHz

hfe

Small-Signal Current Gain

IC = -1.0mA, VCE = -5.0V,
f = 1.0KHz

5086
5087

NF

Noise Figure

IC = -100µA, VCE = -5.0V
RS = 3.0kΩ, f = 1.0KHz

5086
5087

3.0
2.0

dB
dB

IC = -20µA, VCE = -5.0V
RS = 10kΩ
f = 10Hz to 15.7KHz

5086
5087

3.0
2.0

dB
dB

4.0
150
250

pF

600
900

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

©2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

2N5086/2N5087/MMBT5087

Max.
Symbol

Parameter

2N5086
2N5087
625
5.0

PD

Total Device Dissipation
Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

83.3

RθJA

Thermal Resistance, Junction to Ambient

200

*MMBT5087
350
2.8

Units
mW
mW/°C
°C/W

357

°C/W

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."

©2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Thermal Characteristics Ta=25°C unless otherwise noted

2N5086/2N5087/MMBT5087

VCESAT - COLLECTOR EMITTER VOLTAGE (V)

h F E- TYPICAL PULSED CURRENT GAIN

Typical Characteristics

350
V CB = 5V

300

125 °C

250
200

25 °C

150
- 40 °C

100

50
0.01 0.03

0.1
0.3
1
3
10
30
I C - COLLECTOR CURRENT (mA)

100

1
0.8
25 °C

β
β = 10

0.25
0.2
0.15
25 °C

0.1

125 °C

0.05

- 40 °C

0
0.1

1
10
I C - COLLECTOR CURRENT (mA)

1

- 40 °C

0.6

125 °C

0.4

25 °C
125 °C

0.4

β

0.2

β β

0
0.1

β = 10
β
β

1
10
I C - COLLECTOR CURRENT (mA)

50

0
0.1

1
10
I C - COLLECTOR CURRE NT (mA)

25

Figure 4. Base-Emitter On Voltage
vs Collector Current

20

100

f = 1 MHz
CAPACITANCE (pF)

V CB = 40V

10

1

0.1

0.01
25

V CE = 5V

0.2

Figure 3. Base-Emitter Saturation Voltage
vs Collector Current

I CBO - COLLECTOR CURRENT (nA)

β
β

0.8

- 40 °C

0.6

0.3

β

Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current

V BEON - BAS E EMITTER ON VOLTAGE (V)

V BESAT - BASE EMITTE R VOLTAGE (V)

Figure 1. Typical Pulsed Current Gain
vs Collector Current

β

50
75
100
TA - AMBIENT TEMP ERATURE (° C)

Figure 5. Collector Cutoff Current
vs Ambient Temperature

©2003 Fairchild Semiconductor Corporation

125

16
12
8
C ibo

4
0

C obo

0

4

8
12
16
REVERSE BIAS VOLTAGE (V)

20

Figure 6. Input and Output Capacitance
vs Reverse Voltag

Rev. B1, September 2003

V CE = 5V
NF - NOISE FIGURE (dB)

V CE = 5V

300
250
200
150
100

4

µ
µµ Rµ µ= 5.0 kΩΩΩ
I C = - 250 µA,
S
µ
µµ Rµ Sµ= 1.0 kΩΩΩ
I C = - 500 µA,

3

2

1

0
0.1

f

1
10
I C - COLLECTOR CURRENT (mA)

0
100

100

1000

Figure 7. Gain Bandwidth Product
vs Collector Current

10000
f - FREQUENCY (Hz)

1000000

Figure 8. Noise Figure vs Frequency

8
P D - POWER DISSIPATION (mW)

625

V CE = 5V

NF - NOISE FIGURE (dB)

Ω
ΩΩ
Ω
ΩΩ

Ω
µµ Rµµ Sµ= 10 kΩΩΩ Ω
I C = - 20 µA,
Ω

50

T

- GAIN BANDWIDTH PRODUCT (MHz)

5

350

BANDWIDTH = 15.7 kHz

6
µ
I C = 10
µµ µA
µ
µ

4
µ
I C = 100
µµ µA
µ

2

µ

0

1,000

2,000

5,000

10,000

20,000 Ω

50,000

TO-92
500

250
125
0

100,000

SOT-23

375

0

25

R S - SOURCE RESISTANCE
ΩΩ ( ΩΩ)

50
75
100
TEMPERATURE ( o C)

125

150

Ω

µ √µ √
- EQUIVALENT INPUT NOISE VOLTAGE ( µV/ √Hz)
µµ √√
µ √

Figure 10. Power Dissipation vs
Ambient Temperature

0.1

10
V CE = - 5.0V

5
2

0.05

,f=

1 00

Hz

,f=

1
0.5

V CE = - 5.0V

0.02

z
kH
1.0
z
i n
kH
10
,f=
i n

in

0.01

e n , f = 100 Hz

0.005
e n , f = 1.0 kHz

0.1
0.001

0.01
0.1
I C - COLLECTOR CURRENT (mA)

Figure 11. Equivalent Input Noise Current
vs Collector Current

©2003 Fairchild Semiconductor Corporation

1

2
n

0.002

0.2

√e

√i

2

√√
√ √√ √
n - EQUIVALENT INPUT NOISE CURRENT (pA/ Hz)

Figure 9. Wideband Noise Frequency
vs Source Resistance

0.001
0.001

e n , f = 10 kHz

0.01
0.1
I C - COLLECTOR CURRENT (mA)

1

Figure 12. Equivalent Input Noise Voltage
vs Collector Current

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Typical Characteristics(Continuce)

1,000,000

R S - SOURCE RESISTANCE Ω
(Ω )

1,000,000

100,000

1.0
dB

4.0
dB
6.0
dB
10
dB

10,000

1,000
V CE = - 5V
f = 10 kHz
BANDWIDTH = 1.5 kHz

100,000

10,000

100

0.01
0.1
I C - COLLECTOR CURRENT (mA)

0.001

1

Ω

Ω
Ω

R S - SOURCE RESISTANCE ( Ω )

6.0
dB
dB

10

1,000

dB

dB

5,000

dB

10,000

0
4.

4.0

10,000

0
2.

dB
4.0
dB

100,000

V CE = - 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz

2,000
1,000

dB

dB

1

0
6.

10
6.0

0.01
0.1
I C - COLLECTOR CURRENT (mA)

Figure 14. Contours of Constanct
Narrow Band Noise Figure

R S - SOURCE RESISTANCE ( ΩΩ)

Figure 13. Contours of Constanct
Narrow Band Noise Figure

1,000,000

V CE = - 5V
f = 100 Hz
BANDWIDTH = 15 Hz

5.0
dB
8.0
dB
12
dB

1,000

100

0.001

12
dB
8.0
dB
5.0
dB
3.0
dB

Ω
Ω

10
dB
6.0
dB
4.0
dB
2.0
dB

ΩΩ

Ω)
R S - SOURCE RESISTANCE ( Ω

(Continuce)

4.
0
6.0

dB

dB

500
V CE = - 5V
f = 10 MHz
200 BANDWIDTH
= - 2 kHz

100

100

0.001

0.01
0.1
I C - COLLECTOR CURRENT (mA)

Figure 15. BContours of Constant
Narrow Band Noise Figure

©2003 Fairchild Semiconductor Corporation

1

0.01

0.1
1
I C - COLLECTOR CURRENT (mA)

10

Figure 16. Contours of Constant
Narrow Band Noisd Figure

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Typical Characteristics

1.4

h fe and h ie

1.2
1
h oe
0.8
f = 1.0 kHz
0.6 I C = 1.0 mA
TA = -25°C
0.4

0

-5
-10
-15
-20
V CE- COLLECTOR-EMITTE R VOLTAGE (V)

-25

CHARACTERIS TICS REL. TO VALUE, TA= 25°C

Typical Common Emitter Characteristics

2
1.8

VCE = -5.0V
I C = 1.0 mA
f = 1.0 kHz

HARACTERISTICS REL. TO VALUE , I C =1.0mA

HARACTERIS TICS REL. TO VALUE, VCE=-5.0V

1.6

(f = 1.0KHz)

100
h oe
10
h fe
1

0.1

f = 1.0 kHz
VCE = -5.0V
TA = -25°C

0.01
0.1

h ie

0.2
0.5
1
2
5
I C - COLLECTOR CURRE NT (mA)

10

Typical Common Emitter Characteristics

h ie

1.6
1.4

h fe

1.2
1

h fe and h oe

h oe

0.8
h ie

0.6
0.4
-60

-40

-20
0
20
40
60
80
T A - AMBIE NT TEMP ERATURE ( ° C)

100

Typical Common Emitter Characteristics

©2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Typical Common Emitter Characteristics

2N5086/2N5087/MMBT5087

Package Dimensions

TO-92
+0.25

4.58 ±0.20

4.58 –0.15

±0.10

14.47 ±0.40

0.46

1.27TYP
[1.27 ±0.20]

1.27TYP
[1.27 ±0.20]
±0.20

(0.25)

+0.10

0.38 –0.05

1.02 ±0.10

3.86MAX

3.60

+0.10

0.38 –0.05

(R2.29)

Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation

Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Package Dimensions (Continued)

±0.10

±0.10

2.40

0.40 ±0.03

1.30

0.45~0.60

0.20 MIN

SOT-23

0.03~0.10
0.38 REF

0.40 ±0.03

+0.05

0.12 –0.023
0.96~1.14

0.97REF

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03
1.90 ±0.03

0.508REF

Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation

Rev. B1, September 2003

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

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Across the board. Around the world.™
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RapidConfigure™
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SuperSOT™-6
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2003 Fairchild Semiconductor Corporation

Rev. I5

www.s-manuals.com



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Title                           : 2N5086, 2N5087, MMBT5087 - Datasheet. www.s-manuals.com.
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Subject                         : 2N5086, 2N5087, MMBT5087 - Datasheet. www.s-manuals.com.
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