2N7002BK 60 V, 350 MA N Channel Trench MOSFET Nxp
User Manual: Marking of electronic components, SMD Codes LN, LN-, LN-***, LNJ, LNP, LNW, LNp, LNt. Datasheets 2N7002BK, BST122, P6SMB27, PZU6.2B2A, RT9169-45PVL, RT9818A-42PX, TPSMB27.
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2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 °C - - 60 V VGS gate-source voltage Tamb = 25 °C - - ±20 V ID drain current Tamb = 25 °C; VGS = 10 V - - 350 mA RDSon drain-source on-state resistance Tj = 25 °C; VGS = 10 V; ID = 500 mA - 1 1.6 Ω [1] [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name 2N7002BK Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002BK LN* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tamb = 25 °C - 60 V VGS gate-source voltage Tamb = 25 °C - ±20 V ID IDM 2N7002BK Product data sheet drain current VGS = 10 V peak drain current [1] Tamb = 25 °C - 350 mA Tamb = 100 °C - 245 mA - 1.2 A Tamb = 25 °C; single pulse; tp ≤ 10 μs All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 2 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb = 25 °C Min Max Unit [2] - 370 mW [1] - 440 mW Tsp = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature - 1.2 W 150 °C −55 +150 °C −65 +150 °C Source-drain diode source current IS Tamb = 25 °C [1] - 350 mA human body model [3] - 2000 V ESD maximum rating electrostatic discharge voltage VESD [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa001 120 017aaa002 120 Pder (%) Ider (%) 80 80 40 40 0 −75 −25 25 75 0 −75 125 175 Tamb (°C) P tot P der = ------------------------ × 100 % P tot ( 25°C ) Fig 1. Product data sheet 25 75 125 175 Tamb (°C) ID I der = -------------------- × 100 % I D ( 25°C ) Normalized total power dissipation as a function of ambient temperature 2N7002BK −25 Fig 2. Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 3 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa036 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) 10−1 (3) (4) (5) 10−2 (6) 10−3 10−1 1 102 10 VDS (V) IDM = single pulse (1) tp = 100 μs (2) tp = 1 ms (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tsp = 25 °C (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) 2N7002BK Product data sheet Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Min Typ Max Unit [1] - 295 340 K/W [2] - 250 285 K/W - - 105 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 4 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa037 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 10 0.2 0.1 0.05 0 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa038 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 10 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2N7002BK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 5 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 60 - - V 1.1 1.6 2.1 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 10 μA - - 10 μA - 1.3 2 Ω - 1 1.6 Ω - 550 - mS - 0.5 0.6 nC - 0.2 - nC - 0.1 - nC - 33 50 pF - 7 - pF - 4 - pF - 5 10 ns - 6 - ns - 12 24 ns - 7 - ns 0.47 0.75 1.1 V Static characteristics V(BR)DSS drain-source breakdown ID = 10 μA; VGS = 0 V voltage VGS(th) gate-source threshold voltage ID = 250 μA; VDS = VGS IDSS drain leakage current VDS = 60 V; VGS = 0 V IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V [1] VGS = 5 V; ID = 50 mA VGS = 10 V; ID = 500 mA forward transconductance gfs VDS = 10 V; ID = 200 mA [1] Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time ID = 300 mA; VDS = 30 V; VGS = 4.5 V VGS = 0 V; VDS = 10 V; f = 1 MHz VDD = 50 V; RL = 250 Ω; VGS = 10 V; RG = 6 Ω Source-drain diode VSD [1] 2N7002BK Product data sheet source-drain voltage IS = 115 mA; VGS = 0 V Pulse test: tp ≤ 300 μs; δ ≤ 0.01. All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 6 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa039 0.7 VGS = 4.0 V ID (A) 0.6 017aaa040 10−3 3.5 V ID (A) 3.25 V 0.5 10−4 (1) 0.4 (3) (2) 3.0 V 0.3 10−5 2.75 V 0.2 2.5 V 0.1 0.0 0.0 1.0 2.0 3.0 4.0 10−6 0.0 1.0 2.0 VDS (V) 3.0 VGS (V) Tamb = 25 °C Tamb = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa041 6.0 Sub-threshold drain current as a function of gate-source voltage 017aaa042 6.0 RDSon (Ω) RDSon (Ω) (1) 4.0 4.0 (2) (3) 2.0 (1) 2.0 (4) (2) (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 ID (A) Tamb = 25 °C 4.0 6.0 8.0 10.0 VGS (V) ID = 500 mA (1) VGS = 3.25 V (1) Tamb = 150 °C (2) VGS = 3.5 V (2) Tamb = 25 °C (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V Fig 8. Drain-source on-state resistance as a function of drain current; typical values 2N7002BK Product data sheet Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 7 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa043 1.0 017aaa044 2.4 ID (A) a 0.8 (1) 1.8 (2) 0.6 1.2 0.4 0.6 0.2 0.0 0.0 1.0 2.0 3.0 4.0 5.0 VGS (V) 0.0 −60 VDS > ID × RDSon 0 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 25 °C (2) Tamb = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa045 3.0 Fig 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values 017aaa046 102 VGS(th) (V) (1) C (pF) (1) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 −60 0 60 120 180 Tamb (°C) ID = 0.25 mA; VDS = VGS 1 10−1 f = 1 MHz; VGS = 0 V (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 12. Gate-source threshold voltage as a function of ambient temperature Product data sheet 102 10 VDS (V) (1) maximum values 2N7002BK 1 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 8 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 017aaa047 5.0 VGS (V) 4.0 VDS ID 3.0 VGS(pl) 2.0 VGS(th) VGS 1.0 QGS1 0.0 0.0 QGS2 QGS 0.2 0.4 0.6 0.8 QG (nC) QGD QG(tot) 003aaa508 ID = 300 mA; VDD = 6 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa048 1.2 IS (A) 0.8 (1) (2) 0.4 0.0 0.0 0.4 0.8 1.2 VSD (V) VGS = 0 V (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values 2N7002BK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 9 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 2N7002BK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 10 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB Fig 18. Package outline SOT23 (TO-236AB) 2N7002BK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 11 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint SOT23 (TO-236AB) 2N7002BK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 12 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes 2N7002BK v.1 20100617 Product data sheet - - 2N7002BK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 13 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 2N7002BK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 14 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com 2N7002BK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 17 June 2010 © NXP B.V. 2010. All rights reserved. 15 of 16 2N7002BK NXP Semiconductors 60 V, 350 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 June 2010 Document identifier: 2N7002BK
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File Type : PDF File Type Extension : pdf MIME Type : application/pdf PDF Version : 1.3 Linearized : Yes Encryption : Standard V1.2 (40-bit) User Access : Print, Copy, Fill forms, Extract, Assemble, Print high-res Page Mode : UseOutlines XMP Toolkit : 3.1-702 Producer : Acrobat Distiller 7.0.5 (Windows) Keywords : .. Create Date : 2010:06:17 11:15:55Z Creator Tool : FrameMaker 7.1 Modify Date : 2010:06:22 10:34:07+02:00 Metadata Date : 2010:06:22 10:34:07+02:00 Format : application/pdf Title : 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Creator : NXP Semiconductors Subject : Document ID : uuid:48a5b1c6-9fae-4e34-98b1-4a384d29f073 Instance ID : uuid:1276e0c8-c7dd-4719-8310-282b946b00e5 Page Count : 16 Author : NXP SemiconductorsEXIF Metadata provided by EXIF.tools