2N7002 Datasheet. Www.s Manuals.com. Diodes

User Manual: Marking of electronic components, SMD Codes K7, K7-***, K70, K72, K7K. Datasheets 2N7002, 2N7002DW, 2N7002K, 2N7002KW, 2N7002W, BCV71, BS870, BZX384-B4V3, RT9818C-30PVL.

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2N7002
N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

V(BR)DSS

RDS(ON) max

ID max
TA = +25°C

60V

7.5Ω @ VGS = 5V

210mA






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

Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

ideal for high efficiency power management applications.




Applications


Motor Control



Power Management Functions

Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)





Drain

SOT23

D
Gate

Top View

S

G

Source

Equivalent Circuit

Top View

Ordering Information (Note 5)
Part Number
2N7002-7-F
2N7002-13-F
2N7002Q-7-F
Notes:

Compliance
Standard
Standard
Automotive

Case
SOT23
SOT23
SOT23

Packaging
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

K72

Chengdu A/T Site
Date Code Key
Year
2002
Code
N
Month
Code

Jan
1

2003
P

2004
R

Feb
2

2N7002
Document number: DS11303 Rev. 33 - 2

2005
S
Mar
3

K72 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

YM

K72

YM

Marking Information

Shanghai A/T Site
2006
T
Apr
4

2007
U

2008
V

May
5

2009
W

2010
X

Jun
6

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Jul
7

2011
Y

2012
Z

Aug
8

2013
A
Sep
9

2014
B
Oct
O

2015
C

2016
D

Nov
N

2017
E
Dec
D
July 2013

© Diodes Incorporated

2N7002
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS  1.0M
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 7) VGS = 10V
Maximum Body Diode Forward Current (Note 7)

Symbol
VDSS
VDGR
Continuous
Pulsed
TA = +25°C
Steady
TA = +85°C
State
TA = +100°C
TA = +25°C
Steady
TA = +85°C
State
TA = +100°C
Pulsed
Continuous

Value
60
60
±20
±40
170
120
105

VGSS
ID

210
150
135
0.5
2
800

ID
IS

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

Units
V
V
V
mA

mA
A
mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic

Symbol
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 7)

Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

PD
RθJA
RθJC
TJ, TSTG

Value
370
540
348
241
91
-55 to +150

Units
mW
°C/W
°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance

@ TC = +25°C
@ TC = +125°C

@ TJ = +25°C
@ TJ = +25°C
@ TJ = +125°C

Symbol

Min

Typ

Max

Unit

BVDSS

60

70

V

VGS = 0V, ID = 10µA

IDSS





µA

VDS = 60V, VGS = 0V

IGSS






1.0
500
±10

nA

VGS = ±20V, VDS = 0V

VGS(th)

1.0



2.5

V

3.2



4.4

7.5
5.0
13.5

VDS = VGS, ID = 250µA
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, ID = 0.5A
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA



RDS(ON)



Test Condition

ID(ON)
gFS
VSD

0.5
80


1.0

0.78



1.5

A
mS
V

Ciss
Coss
Crss





22
11
2.0

50
25
5.0

pF
pF
pF

VDS = 25V, VGS = 0V
f = 1.0MHz

Gate resistance

Rg



120



Ω

VDS = 0V, VGS = 0V,
f = 1.0MHz

Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Qg
Qgs
Qgd





223
82
178





pC

VDS = 10V, ID = 250mA

tD(on)
tr
tD(off)
tf






2.8
3.0
7.6
5.6






ns

VDD = 30V, ID = 0.2A,
RL = 150, VGEN = 10V,
RGEN = 25

On-State Drain Current
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes:

6. Device mounted on FR-4 PCB, with minimum recommended pad layout
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.

2N7002
Document number: DS11303 Rev. 33 - 2

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2N7002

7
RDS(ON), NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ()

ID, DRAIN-SOURCE CURRENT (A)

1.0

0.8

0.6

0.4

0.2

0

0

4
2
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
1

RDS(ON), NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ()

RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE ()

4
3
2
1

0.2

0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current

1.0

6

2.5

2.0

1.5
VGS = 10V,
ID = 200mA

5

4
ID = 500mA

3

ID = 50mA

2

1
0
0

-30
-5
20
45
70 95
120 145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs. Junction Temperature

10

2
4
6
8
10 12 14 16 18
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage

400

9

350
Pd, POWER DISSIPATION (mW)

VGS, GATE SOURCE CURRENT (V)

5

0
0

5

3.0

1.0
-55

6

8
7
6
5
4
3
2

300
250
200
150
100
50

1
0
0

0.2

0.6
0.8
0.4
ID, DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics

2N7002
Document number: DS11303 Rev. 33 - 2

1

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0

50
75
25
100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
0

July 2013
© Diodes Incorporated

2N7002

Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°

All Dimensions in mm

B C

H
K

M

K1
D

J

F

L

G

Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y
Z

C

X

2N7002
Document number: DS11303 Rev. 33 - 2

Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35

E

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© Diodes Incorporated

2N7002

IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com

2N7002
Document number: DS11303 Rev. 33 - 2

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