2N7002K Datasheet. Www.s Manuals.com. Diodes

User Manual: Marking of electronic components, SMD Codes K7, K7-***, K70, K72, K7K. Datasheets 2N7002, 2N7002DW, 2N7002K, 2N7002KW, 2N7002W, BCV71, BS870, BZX384-B4V3, RT9818C-30PVL.

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2N7002K

Document number: DS30896 Rev. 10 - 2

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© Diodes Incorporated

2N7002K

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS R

DS(ON) max ID max

TA = 25°C

60V

2 @ VGS = 10V 380mA

3 @ VGS = 5V 310mA

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead, Halogen and Antimony Free, RoHS Compliant "Green"

Device (Notes 1 and 2)

• ESD Protected Up To 2kV

• Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Motor control

• Power Management Functions

• Backlighting

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Part Number Qualification Case Packaging

2N7002K-7 Commercial SOT23 3000/Tape & Reel

2N7002KQ-7 Automotive SOT23 3000/Tape & Reel

2N7002K-13 Commercial SOT23 10000/Tape & Reel

2N7002KQ-13 Automotive SOT23 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT23

Top View

ESD protected up to 2kV Top View

D

GS

Equivalent Circuit

Source

Gate

Protection

Diode

Gate

Drain

K = SAT (Shanghai Assembly/ Test site)

C = CAT (Chengdu Assembly/ Test site)

7K= Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: N = 2002)

M = Month (ex: 9 = September)

Chengdu A/T Site Shanghai A/T Site

C7K

YM

K7K

YM

2N7002K

Document number: DS30896 Rev. 10 - 2

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NEW PRODUCT

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage VDSS 60 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 5) VGS = 10V

Steady

State TA = 25°C

TA = 70°C ID 380

300 mA

t<5s TA = 25°C

TA = 70°C ID 430

340 mA

Continuous Drain Current (Note 5) VGS = 5V

Steady

State TA = 25°C

TA = 70°C ID 310

240 mA

t<5s TA = 25°C

TA = 70°C ID 350

270 mA

Maximum Continuous Body Diode Forward Current (Note 5) IS 0.5 A

Pulsed Drain Current (10μs pulse, duty cycle = 1%) (Note 5) IDM 1.2 A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units

Total Power Dissipation (Note 4) PD 370 mW

Thermal Resistance, Junction to Ambient (Note 4) Steady State RθJA 357 °C/W

t<5s 292

Total Power Dissipation (Note 5) PD 540 mW

Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 240

°C/W

t<5s 197

Thermal Resistance, Junction to Case (Note 5) R

θ

JC 91

Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA

Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 μA VDS = 60V, VGS = 0V

Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage VGS

(

th

)

1.0 1.6 2.5 V

VDS = 10V, ID = 1mA

Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯

⎯

2.0

3.0 Ω VGS = 10V, ID = 0.5A

VGS = 5V, ID = 0.05A

Forward Transfer Admittance |Yfs| 80 ⎯ ⎯ ms VDS =10V, ID = 0.2A

Diode Forward Voltage VSD ⎯ 0.75

1.1

V VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance Ciss ⎯ 30 50 pF

VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance Coss ⎯ 4.2 25 pF

Reverse Transfer Capacitance Crss ⎯ 2.9 5.0 pF

Gate Resistance R

g

⎯ 133 ⎯ m f = 1MHz , VGS = 0V, VDS = 0V

Total Gate Charge Q

g

⎯ 0.3 ⎯ nC VGS = 4.5V, VDS = 10V,

ID = 250mA

Gate-Source Charge Q

g

s ⎯ 0.2 ⎯ nC

Gate-Drain Charge Q

g

d ⎯ 0.08 ⎯ nC

Turn-On Delay Time tD

(

on

)

⎯ 3.9 ⎯ ns

VDD = 30V, VGS = 10V,

RG = 25, ID = 200mA

Turn-On Rise Time t

r

⎯ 3.4 ⎯ ns

Turn-Off Delay Time tD

(

off

)

⎯ 15.7 ⎯ ns

Turn-Off Fall Time tf ⎯ 9.9 ⎯ ns

Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout

5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

2N7002K

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2N7002K

NEW PRODUCT

0

0.2

0.4

0.6

0.8

1.0

012 345

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

DS

I, D

R

AIN

C

U

R

R

EN

T

(A)

D

V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

GS

T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage vs. Channel Temperature

ch

0

0.5

1

1.5

2

-50 -2502550

75 100 125 150

0.1

I , DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance vs. Drain Current

D

1

10

1

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

D

10

0

V GATE SOURCE VOLTAGE (V)

GS

,

Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage

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NEW PRODUCT

0

T , CHANNEL TEMPERATURE ( C)

Fig. 7

CH

°

Static Drain-Source On-State Resistance

vs. Channel Temperature

I , REVERSE DRAIN CURRENT (A)

DR

1

I , REVERSE DRAIN CURRENT (A)

DR

1

I , DRAIN CURRENT (A)

D

Fig.10 Forward Transfer Admittance vs. Drain Current

|

Y

|, F

O

R

WA

R

D T

R

ANSFE

R

ADMITTAN

C

E (S)

fs

0.001

0.01

0.1

1

0.1 1 10 100

Fig. 11 Safe Operation Area

V , DRAIN-SOURCE VOLTAGE (V)

DS

I, D

R

AI

N

C

U

R

R

E

N

T

(A)

D

R

Limited

DS(on)

T = 150°C

T = 25°C

Single Pulse

J(max)

A

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

P = 10s

W

µ

0

1

2

3

4

5

6

7

8

9

10

t1, PULSE DURATION TIME (sec)

Fig. 12 Single Pulse Maximum Power Dissipation

0.001 0.01 0.1 1 10 100 1,0000.0001

Single Pulse

R = 240 C/W

R = r * R

T - T = P * R

θ

θθ

θ

JA

JA(t) (t) JA

JA JA(t)

°

P , PEAK TRANSIENT POIWER (W)

(PK)

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NEW PRODUCT

0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000

t1, PULSE DURATION TIME (sec)

Fig. 13 Transient Thermal Resistance

0.00001

0.001

0.01

0.1

1

r(t),

T

R

ANSIEN

T

T

H

E

R

MAL

R

ESIS

T

AN

C

E

R = r * R

θ

JA(t) (t)

θ

θ

JA

JA

R = 240 C/W

Duty Cycle, D = t1/t2

°

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

Package Outline Dimensions

Suggested Pad Layout

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

A

M

JL

D

F

BC

H

K

G

K1

XE

Y

C

Z

2N7002K

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NEW PRODUCT

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