2N7002 Datasheet. Www.s Manuals.com. Panjit
User Manual: Marking of electronic components, SMD Codes S7, S72, S72**, S780. Datasheets 2N7002, SD103BW, SST177, SiS780DN.
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PAGE . 1August 29,2013-REV.03
2N7002
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=5
• RDS(ON), VGS@4.5V,IDS@75mA=7.5
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case : SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight : 0.0003 ounces, 0.008 grams
• Marking : S72
60V N-Channel Enhancement Mode MOSFET
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
Note:1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
RETEMARAPlobmyStimiLstinU
egatloVecruoS-niarD V
SD
06V
egatloVecruoS-etaG V
SG
+ 02V
tnerruCniarDsuounitnoC I
D
052Am
tnerruCniarDdesluP
)1
I
MD
0031Am
noitapissiDrewoPmumixaM T
A
52=
O
C
T
A
57=
O
CP
D
053 012 Wm
egnaRerutarepmeTegarotSdnanoitcnuJgnitarepO T
J
T,
GTS
051+ot55-
O
C
)detnuomBCP(ecnatsiseRlamrehTtneibmAot-noitcnuJ
2
R
θAJ
753
O
W/C
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
0.006(0.15)MIN.
0.008(0.20)
0.003(0.08)
0.004(0.10)
0.000(0.00)
PAGE . 2August 29,2013-REV.03
2N7002
ELECTRICAL CHARACTERISTICS
V
DD
V
OUT
V
IN
R
G
R
L
Switching
Test Circuit
Gate Charge
Test Circuit
V
DD
V
GS
R
G
R
L
1mA
retemaraPlobmySnoitidnoCtseT.niM.pyT.xaMstinU
citatS
egatloVnwodkaerBecruoS-niarDVB
SSD
V
SG
I,V0=
D
Au01=06--V
egatloVdlohserhTetaGV
)ht(SG
V
SD
V=
SG
I,
D
Au052=1-5.2V
ecnatsiseRetatS-nOecruoS-niarDR
)no(SD
V
SG
I,V5.4=
D
Am57=--5.7
Ω
ecnatsiseRetatS-nOecruoS-niarDR
)no(SD
V
SG
I,V01=
D
Am005=--5
tnerruCniarDegatloVetaGoreZI
SSD
V
SD
V,V06=
SG
V0=--1Au
egakaeLydoBetaGI
SSG
V
SG
=+ V,V02
SD
V0=--+001An
ecnatcudnocsnarTdrawroFg
Sf
V
SD
I,V51=
D
Am052=002--Sm
cimanyD
egrahCetaGlatoTQ
g
V
SD
I,V51=
D
Am005=
V
DD
V5.4=
-6.07.0
CnegrahCecruoS-etaGQ
sg
-1.0-
egrahCniarD-etaGQ
dg
-80.0-
emiTnO-nruTt
no
V
DD
R,V01=
L
02= Ω
I
D
V,Am005=
NEG
V01=
R
G
01= Ω
-951
sn
emiTffO-nruTt
ffo
-1262
ecnaticapaCtupnIC
ssi
V
SD
V,V52=
SG
V0=
HM0.1=f
Z
--05
FpecnaticapaCtuptuOC
sso
--52
ecnaticapaCrefsnarTesreveRC
ssr
--5
edoiDniarD-ecruoS
tnerruCdrawroFedoiD.xaMI
s
---052Am
egatloVdrawroFedoiDV
DS
I
S
V,Am052=
SG
V0=-39.02.1V
PAGE . 3August 29,2013-REV.03
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
012345
VDS -Drain-to-Source Voltage (V)
ID-Drain-to-Source Current (A)
5.0V
4.0V
3.0V
VGS
= 6.0~10V
0
0.2
0.4
0.6
0.8
1
1.2
0123456
VGS -Gate-to-Source Voltage (V)
ID-Drain Source Current (A)
VDS =10V
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1 1.2
ID-Drain Current (A)
RDS(ON)-On-Resistance
()W
VGS =4.5V
V
GS
=10V
0
2
4
6
8
10
2345678910
VGS - Gate-to-Source Voltage (V)
RDS(ON) - On-Resistance
I
D
=500mA
oC
T =125
J
oC
T=25
J
()W
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature ( oC)
R
DS(ON)
- On-Resistance(Normalized)
VGS =10V
ID=500mA
oC
T=25
J
2N7002
PAGE . 4August 29,2013-REV.03
Fig.6 - Gate Charge Waveform
Fig.8 - Threshold Voltage vs Temperature
Fig.7 - Gate Charge
Fig.9 - Breakdown Voltage vs Junction Temperature
Fig.10 - Source-Drain Diode Forward Voltage
QgdQgs Qg
Qsw
Vgs(th)
Vgs
Qg
Qg(th)
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
Qg- Gate Charge (nC)
V
GS
- Gate-to-Source Volt age (V)
VDS=
15V
ID=500mA
0.6
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature ( oC)
V
th
- G-S Threshold Voltage (NORMALIZED)
ID=250 Am
64
65
66
67
68
69
70
71
72
73
-50 -25 0 25 50 75 100 125 150
TJ- Junction Temperature ( oC)
BVDSS - Breakdown Voltage (V)
I=250A
D
m
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
T
J
=125
o
C
VGS =0V
T =-55
J
o
C
Fig.11 - Capacitance vs Drain to Source Voltage
VDS- Drain-to-Source Voltage (V)
C - Capacitance (pF)
o
C
T=25
J
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25
Ciss
f=1MHz
V
GS
=0V
Crss
Coss
2N7002
PAGE . 5August 29,2013-REV.03
2N7002
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.078
(2.00)
0.035 MIN.
(0.90) MIN.
0.043
(1.10)
0.106
(2.70)
PAGE . 6August 29,2013-REV.03
2N7002
Part No_packing code_Version
2N7002_R1_00001
2N7002_R2_00001
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code XX Version Code XXXXX
Packing type 1
st
Code Packing size code 2
nd
Code HF or RoHS 1
st
Code 2
nd
~5
th
Code
Tape and Ammunition Box
(T/B) AN/A 0HF 0 serial number
Tape and Reel
(T/R) R7" 1RoHS 1 serial number
Bulk Packing
(B/P) B13" 2
Tube Packing
(T/P) T26mm X
Tape and Reel (Right Oriented)
(TRR) S52mm Y
Tape and Reel (Left Oriented)
(TRL) LPANASERT T/B CATHODE UP
(PBCU) U
FORMING FPANASERT T/B CATHODE DOWN
(PBCD) D
PAGE . 7
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of fitness for particular purpose, non-infringement and merchantability.
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2N7002
August 29,2013-REV.03
