2N7002 Datasheet. Www.s Manuals.com. Zetex
User Manual: Marking of electronic components, SMD Codes 7002, 7005, 702, 702⚫, 702*, 703 *, 7030L, 704, 705, 709, 709**, 70N10L, 70T. Datasheets 2N7002, 2N7002-G, 2N7002DW, 2N7002E, 2N7002K, 2N7002L, 2N7002MTF, 2V7002K, 2V7002L, FAN7005M, FCX705, G709RCUf, G709T1Uf, L2N7002LT1G, MTN138ZN3, MTN7002N3, MTN7002ZHN3, MTNK1N3, MTNK2N3, PH7030L, SPB70N10L, SPI70N10L, SPP70N10L, TK71570AS.
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Issue 5 - October 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
2N7002
60V SOT23 N-channel enhancement mode MOSFET
Summary
Description
A small signal MOSFET for general purpose switching applications.
Features
• Fast switching speed
• Low gate drive capability
• SOT23 package
Applications
• General switching applications
Ordering information
Device marking
702
V(BR)DSS RDS(on) (⍀)I
D (A)
60
7.5 @ VGS= 10V 0.5
7.5 @ VGS= 5V 0.05
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
2N7002 7 8 3,000
D
S
G
D
Top view
S
G
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Absolute maximum ratings
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
NOTES:
(a) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%.
(b) Sample test.
(c) Switching times measured with 50⍀ source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device.
Parameter Symbol Limit Unit
Drain-source voltage VDS 60 V
Continuous drain current at Tamb=25°C ID115 mA
Pulsed drain current IDM 800 mA
Gate-source voltage VGS ±40 V
Power dissipation at Tamb =25°C Ptot 330 mW
Operating and storage temperature range Tj, Tstg -55 to +150 °C
Parameter Symbol Min. Max. Unit Conditions
Drain-source breakdown voltage BVDSS 60 V ID= 10A, VGS=0V
Gate-source threshold voltage VGS(th) 12.5VI
D= 250A, VDS=VGS
Gate-body leakage IGSS 10 nA VGS=±20V, VDS=0V
Zero gate voltage drain current IDSS 1AV
DS= 48V, VGS=0V
500 A
V
DS
= 48V, V
GS
=0V, T=125°C
On-state drain current(a) ID(on) 500 mA VDS= 25V, VGS= 10V
Static drain-source on-state
voltage(a)
VDS(on) 3.75 V VGS= 10V, ID= 500mA
375 mV VGS= 5V, ID= 50mA
Static drain-source on-state
resistance(a)
RDS(on) 7.5 ⍀VGS= 10V, ID= 500mA
7.5 ⍀VGS= 5V, ID= 50mA
Forward transconductance(a)(b) gfs 80 mS VDS= 25V, ID= 500mA
Input capacitance(b) Ciss 50 pF
VDS= 25V, VGS=0V f=1MHz
Common source output
capacitance(b)
Coss 25 pF
Reverse transfer capacitance(b) Crss 5pF
Turn-on time(b)(c) t(on) 20 ns VDD≈30V, ID= 200mA,
Rg=25⍀, RL=150⍀
Turn-off time(b)(c) t(off) 20 ns
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© Zetex Semiconductors plc 2007
SOT23 Package outline
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM
A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104
b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055
c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236
D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024
e 0.95 NOM 0.037 NOM - - - - -
E
e
L
e1
D
A
c
E1
L1
A1
b
3 leads
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© Zetex Semiconductors plc 2007
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