2SA2094 Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes VP, VP-, VPW, VPp, VPt. Datasheets 2SA2094, 74LVC1G32FW5-7, BZB84-B8V2, CMDZ12L, PZU13BA , RP130K241D, SMAJ160CA.

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2SA2094
Transistors

Medium power transistor (−60V, −2A)
2SA2094
!External dimensions (Unit : mm)
TSMT3

2.9

0.4

(1)

(3)

1.9

0.3

1.0MAX

0.7
0.6

0

0.1

(1) Base
(2) Emitter
(3) Collector

0.85

(2)

0.95 0.95

2.8
1.6

0.16

!Features
1) High speed switching.
(Tf : Typ. : 30ns at IC = −2A)
2) Low saturation voltage, typically
(Typ. : −200mV at IC = −1A, IB = −0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5866

Each lead has same dimensions

Abbreviated symbol : VP

!Applications
Low frequency amplifier
High speed switching

!Structure
PNP Silicon epitaxial planar transistor

!Packaging specifications
Package
Type

Taping
TL

Code
Basic ordering unit (pieces)

3000

2SA2094

!Absolute maximum ratings (Ta=25°C)
Symbol

Limits

Unit

Collector-base voltage

VCBO

−60

V

Collector-emitter voltage

VCEO

−60

V

Parameter

VEBO

−6

V

DC

IC

−2

A

Pulsed

ICP

−4

A

∗1

Power dissipation

PC

500

mW

∗2

Junction temperature

Tj

150

°C

Tstg

−55 to 150

°C

Emitter-base voltage
Collector current

Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land

1/3

2SA2094
Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current

Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO

Min.
−60
−60
−6
−
−

Typ.
−
−
−
−
−

Max.
−
−
−
−1.0
−1.0

Unit
V
V
V
µA
µA

Collector-emitter saturation voltage

VCE (sat)

−

−200

−500

mV

hFE

120

−

270

−

fT

−

300

−

MHz

Corrector output capacitance

Cob

−

25

−

pF

Turn-on time
Storage time
Fall time

Ton
Tstg
Tf

−
−
−

25
100
30

−
−
−

ns
ns
ns

DC current gain

Transition frequency

Condition
IC= −1mA
IC= −100µA
IE= −100µA
VCB= −40V
VEB= −4V
IC= −1A
IB= −0.1A
VCE= −2V
IC= −100mA
VCE= −10V
IE=100mA
f=10MHz
VCB= −10V
IE=0mA
f=1MHz
IC= −2A
IB1= −200mA
IB2=200mA
VCC 25V

∗1
∗1
∗1

∗2

∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits

!hFE RANK
Q
120−270

!Electrical characteristic curves

100ms
10ms
1ms
DC

−0.1

−0.01

Single
non repetitive
Pulsed

−0.001
−0.1

−1

−10

100

Tf
Ton

−0.1

−1

1000

VCE= −2V

100
Ta=125°C
Ta=25°C
Ta= −40°C

10

1
−0.001

−10

−0.01

−0.1

−1

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

Fig.1 Safe Operating Area

Fig.2 Switching Time

Fig.3 DC Current Gain vs.
Collector Current (Ι)

100
VCE=5V
VCE=3V
VCE=2V

10

1
−0.001

−10

Ta=25°C

−0.01

−0.1

−1

COLLECTOR CURRENT : IC (A)

Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)

−10

−1
Ta=125°C
Ta=25°C
Ta= −40°C

−0.1

−0.01
−0.001

−10

IC / IB=10 / 1

COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)

1000

DC CURRENT GAIN : hFE

Tstg

10
−0.01

−100

Ta=25°C
VCC= −25V
IC / IB=10 / 1

DC CURRENT GAIN : hFE

−1

SWITCHING TIME : (ns)

1000

COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)

COLLECTOR CURRENT : IC (A)

−10

−0.01

−0.1

−1

−10

COLLECTOR CURRENT : IC (A)

Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)

−10

Ta=25°C

−1
IC / IB=20 / 1
IC / IB=10 / 1

−0.1

−0.01
−0.001

−0.01

−0.1

−1

−10

COLLECTOR CURRENT : IC (A)

Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)

2/3

2SA2094
Transistors

−1

Ta=125°C
Ta=25°C
Ta= −40°C

−0.1

−0.01
−0.001

−0.01

−0.1

−1

−0.1

COLLECTOR CURRENT : IC (A)

COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)

−0.5

0

−1

−1.5

1000

Ta=25°C
VCE= −10V

100

10

1
0.001

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.7 Base-Emitter Saturation
Voltage vs. Collecter Current

1000

Ta=125°C
Ta=25°C
Ta= −40°C

−1

−0.01

−10

VCE= −2V

TRANSITION FREQUENCY : fT (MHz)

−10

IC / IB=10 / 1
COLLECTOR CURRENT : IC (A)

BASE EMITTER SATURATION
VOLTAGE : VBE (sat) (V)

−10

0.01

0.1

1

10

EMITTER CURRENT : IE (A)

Fig.8 Grounded Emitter
Propagation Characteristics

Fig.9 Transition Frequency

Ta=25°C
f=1MHz

100

10

1
−0.1

−1

−10

−100

BASE TO COLLECTOR VOLTAGE : VCB (V)

Fig.10 Collector Output Capacitance

!Switching characteristics measurement circuits
RL=12.5Ω
IC

IB1
VIN

PW
VCC −25V

IB2
PW 50µs
DUTY CYCLE ≤ 1%

IB2
IB1
BASE CURRENT
WAVEFORM
90%
COLLECTOR CURRENT
WAVEFORM

Ton

Tstg

Tf
IC

10%

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0

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