2SC3356 Datasheet. Www.s Manuals.com. Nec

User Manual: Marking of electronic components, SMD Codes R2**, R23, R24, R25, R29A, R29B, R29C, R29D, R29E, R29F, R2A, R2F, R2G, R2T, R2X, R2p, R2s. Datasheets 2SC3356, BFR93A, ELM9732CAA, MMST2907A, MMST3906, MMST4401, MMST4403, MMSTA56, REF2912, REF2920, REF2925, REF2930, REF2933, REF2940, SST2907A, SST3906, SST4401, SST4403, SSTA56, UMT2907A, UMT3906.

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DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
1985©
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC100 mA
Total Power Dissipation PT200 mW
Junction Temperature Tj150 C
Storage Temperature Tstg 65 to +150 C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0 AV
CB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 AV
EB = 1.0 V, IC = 0
DC Current Gain hFE* 50 120 300 VCE = 10 V, IC = 20 mA
Gain Bandwidth Product fT7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance Cre** 0.55 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain S21e211.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW 350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
hFE Classification
Class R23/Q * R24/R * R25/S *
Marking R23 R24 R25
hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
13
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.21.1 to 1.4
0 to 0.1
0.950.3 0.95 0.4
+0.1
−0.05
0.4
+0.1
−0.05
0.16
+0.1
−0.06
0.65
+0.1
−0.15
2
2SC3356
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1 5 10 500.5
100 150
T
A
-Ambient Temperature-°C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-Total Power Dissipation-mWh
FE
-DC Current Gain
V
CE
= 10 V
0
5
10
15
0.5 1 5 10 50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5
1
2
0 0.5 1 2 5 10 20 30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
re
-Feed-back Capacitance-pF
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0 0.5 1.0 105.0 30
I
C
-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f
T
-Gain Bandwidth Product-MHz
V
CE
= 10 V 0
10
20
0.1 0.2 0.4 0.6 0.81.0 2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
max
-Maximum Gain-dB
|S
21e
|
2
-Insertion Gain-dB
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
Free Air
3
2SC3356
0
2
1
5
4
3
7
6
0.5 1 5 10 50 70
I
C
-Collector Current-mA
NOISE FIGURE vs.
COLLECTOR CURRENT
NF-Noise Figure-dB
V
CE
= 10 V
f = 1.0 GHz
5
4
3
2
1
0
18
15
12
6
3
0246810
V
CE
-Collector to Emitter Voltage-V
NOISE FIGURE, FORWARD INSERTION
GAIN vs. COLLECTOR TO EMITTER VOLTAGE
NF-Noise Figure-dB
|S
21e
|
2
-Insertion Gain-dB
f = 1.0 GHz
I
C
= 20 mA
|S
21e
|
2
NF
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz) S11 S11 S21 S21 S12 S12 S22 S22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.651
0.467
0.391
0.360
0.360
0.361
0.381
0.398
0.423
0.445
69.3
113.3
139.3
159.2
176.9
172.7
160.3
152.2
143.3
137.6
10.616
6.856
4.852
3.802
3.098
2.646
2.298
2.071
1.836
1.689
129.3
104.4
90.9
81.2
72.9
67.3
59.3
55.2
49.0
46.2
0.051
0.071
0.086
0.101
0.118
0.137
0.157
0.180
0.203
0.220
59.2
54.4
56.0
59.1
61.0
63.5
63.3
64.1
63.7
64.7
0.735
0.550
0.468
0.426
0.397
0.373
0.360
0.337
0.320
0.302
28.1
34.1
33.9
33.6
35.7
38.3
43.0
45.9
52.3
52.2
VCE = 10 V, IC = 5 mA, ZO = 50
f (MHz) S11 S11 S21 S21 S12 S12 S22 S22
200
400
600
800
1000
1200
1400
1600
1800
2000
0.339
0.258
0.243
0.242
0.260
0.269
0.294
0.314
0.343
0.367
107.0
147.3
167.7
177.0
164.5
157.6
148.7
143.1
136.5
131.4
16.516
8.928
6.022
4.633
3.744
3.193
2.750
2.479
2.185
2.016
108.7
92.1
83.0
76.2
69.9
65.7
58.8
55.5
50.1
47.8
0.035
0.060
0.085
0.109
0.136
0.160
0.187
0.212
0.238
0.254
66.1
71.0
71.9
72.2
70.4
69.9
66.7
65.2
62.4
61.6
0.459
0.343
0.305
0.284
0.266
0.246
0.233
0.208
0.190
0.173
36.6
32.9
29.9
29.4
31.7
35.0
40.4
43.6
50.5
48.3
4
2SC3356
S-PARAMETER
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
20
30
40
50
0060
70
80
90
100
110
120
130
140
150
−160
−150
−140
−130
−120
−110
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0
10
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.02
0.48
0.01
0.49
0
0
0.49
0.01
0.48
0.02
0.47
0.03
0.46
0.04
0.45
0.05
0.44
0.06
0.43
0.07
0.42
0.08
0.41
0.09
0.40
0.10
0.39
0.11
0.38
0.12
0.37
0.13
0.36
0.14
0.35
0.15
0.34
0.16
0.33
0.17
0.32
0.18
0.31
0.19
0.30
0.20
0.29
0.21
0.28
0.22
0.27
0.23
0.26
0.24
0.25
0.25
0.24
0.26
0.23
0.27
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
2.0
50
10
6.0
4.0
3.0
1.8
1.6
1.4
1.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
(
+JX
––––
Z
O
)
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.3
0.2
0.1
0.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.4
0.5
5.0
10
50
3.0
4.0
1.8
2.0
1.2
1.0
0.9
1.4
1.6
REACTANCE COMPONENT
(
R
––––
Z
O
)
NE
G
AT
IVE
R
E
AC
TA
N
CE
C
OM
PO
NE
NT
P
OS
ITIVE
R
EA
C
TA
NC
E
CO
M
P
ON
EN
T
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0
(
−JX
––––
Z
O
)
20
20
0.2
0.4
0.6
0.8
1.0
S
11e
, S
22e
-FREQUENCY
S
21e
-FREQUENCY
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
5 10 15 20
S
21e
0.2 GHz
2.0 GHz
90°
0°
30°
−30°
60°
−60°
180°
150°
−150°
120°
−120°
−90°
0.05 0.1 0.15 0.2 0.25
S
12e
0.2 GHz
2.0 GHz
S
12e
-FREQUENCY
V
CE
= 10 V
200 MHz Step
CONDITION
V
CE
= 10 V
I
C
= 20 mA
CONDITION V
CE
= 10 V
I
C
= 20 mA
CONDITION
0.2 GHz
0.2 GHz
0.2 GHz
2.0 GHz
I
C
= 20 mA
S
22e
S
11e
I
C
= 20 mA I
C
= 5 mA
I
C
= 5 mA
5
2SC3356
[MEMO]
6
2SC3356
[MEMO]
7
2SC3356
[MEMO]
2SC3356
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