2SC3415S, 2SC4015, 2SC4061K Datasheet. Www.s Manuals.com. 2sc4061k, 2sc4015 Rohm

User Manual: Marking of electronic components, SMD Codes AN, AN*, AN**, AN-***, ANN, ANP, ANs, An. Datasheets 2SC4061K, 2SC4618, 74AHC1G126GF, 74AHC1G126GM, 74AHC1G126GW , AO3420, BD48E33G, BD48K33G, BFP450, MIC803-41D4VC3, MIC803-41D4VM3, MMBZ5235B, RT9011-SKPQWC, RT9193-27PU5, RT9198-35PY, RT9819B-25PU3.

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2SC4061K / 2SC3415S / 2SC4015
Transistors

Chroma amplifier transistor (300V, 0.1A)
2SC4061K / 2SC3415S / 2SC4015
zExternal dimensions (Unit : mm)

(2)

(3)

0.4

(1)

2SC4061K

0.95 0.95
1.9
2.9

zFeatures
1) High breakdown voltage. (BVCEO=300V)
2) Low collector output capacitance.
(Typ. 3pF at VCB=30V)
3) Ideal for chroma circuit.

1.6

Limits

Unit

Collector-base voltage
Collector-emitter voltage

VCBO
VCEO

300
300

V
V

Emitter-base voltage
Collector current

VEBO
IC

5
100
0.2

V
mA

PC
Tj

Storage temperature

Tstg

4

W

0.3

1 ∗
150

Junction temperature

2SC3415S

1.1

Each lead has same dimensions

2

3Min.

Collector power
dissipation

2SC4061K
2SC3415S
2SC4015

0.3Min.

ROHM : SMT3
EIAJ : SC-59

(1) Emitter
(2) Base
(3) Collector

3

Symbol

(15Min.)

Parameter

0~0.1

zAbsolute maximum ratings (Ta=25°C)

0.8

0.15

2.8

°C

−55 to +150

°C

∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.

0.45

2.5

(1) Emitter
(2) Collector
(3) Base

0.5 0.45

5

2SC4061K 2SC3415S
SPT
SMT3
NP
NP
−
AN
TP
T146
5000
3000

∗

2SC4015
ATV
NP
−
TV2
2500

(1) (2) (3)

2SC4015

Taping specifications

2.5

6.8

0.9

Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)

1.0

∗ Denotes hFE
0.65Max.

0.5

4.4

zPackaging specifications and hFE

14.5

ROHM : SPT
EIAJ : SC-72

(1) (2) (3)

ROHM : ATV

2.54 2.54

1.05

0.45

(1) Emitter
(2) Collector
(3) Base

Taping specifications

zElectrical characteristics (Ta=25°C)
Symbol

Min.

Typ.

Max.

Unit

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

Parameter

BVCBO
BVCEO

300
300
5

−
−

−
−
−

V
V
V

IC=50µA
IC=100µA
IE=50µA

Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage

ICBO

0.5
0.5

µA
µA

VCB=200V

2

V

IC/IB=50mA/5mA

180
−
−

−
MHz

DC current transfer ratio
Gain bandwidth product
Collector output capacitance

BVEBO

−
−

IEBO

−
−

VCE(sat)

−

hFE

56

fT

50

−
−
−
100

Cob

−

3

pF

Conditions

VEB=4V
VCE/IC=10V/10mA
VCE=30V, IE=−10mA, f=30MHz
VCB=30V, IE=0A, f=1MHz

Rev.A

1/3

2SC4061K / 2SC3415S / 2SC4015
Transistors
zElectrical characteristics curves

0.4mA

20

0

IB=0.2mA

0

2

4

6

8

0.6mA

40
0.4mA

20

0

10

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

0

4

8

12

16

°C

10
5
2
1
0.5
200

20

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Ground emitter output
characteristics ( Ι )

500

IB=0.2mA

20

500

400

600

800

1000

1200

1400

1600

BASE TO EMITTER VOLTAGE : VBE (mV)

Fig.2 Ground emitter output
characteristics ( ΙΙ )

Ta=25°C

−25°C

40

60

50

Ta=10
0

A
1.0m
0.8mA
0.6mA

A
1.0m
0.8mA

VCE=10V

100

25°C

60

1.4mA
1.2mA

80

200

2.0mA
1.8mA
1.6mA

COLLECTOR CURRENT : IC (mA)

80

100 Ta=25°C

Ta=25°C

2.0mA
1.8mA
1.6mA
1.4mA
1.2mA

COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

100

Fig.3 Ground emitter propagation
characteristics

2

VCE=10V

Ta=25°C

200
VCE=10V

100

5V

50

20

Ta=100°C

200
100

DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

1

25°C

50

−25°C

20
10
5

0.5

IC/IB=10

0.2
0.1

5

0.05

10
0.5 1

2

5 10

20

2
0.2

50 100

COLLECTOR CURRENT : IC (mA)

25°C
VBE(sat)

0.5

100°C

0.2
0.1

Ta=100°C

25°C
VCE(sat)
−25°C

0.05

0.02
0.2

0.5 1

2

5 10

20

50 100

COLLECTOR CURRENT : IC (mA)

Fig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current

5 10

20

0.02
0.2

50 100

200 Ta=25°C

VCE=30

100
10V

50

20
10

5
−1

−2

−5

−10

−20

−50

EMITTER CURRENT : IE (mA)

Fig.8 Gain bandwidth product
vs. emitter current

0.5 1

2

5 10

20

50 100

COLLECTOR CURRENT : IC (mA)

Fig.6 Collector-emitter saturation voltage
vs. collector current

Fig.5 DC current gain
vs. collector current ( ΙΙ )

TRANSITION FREQUWNCY : fT (MHZ)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATURATION VOLTAGE : VBE(sat) (V)

IC/IB=10

1 Ta=−25°C

2

COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain
vs. collector current ( Ι )

2

0.5 1

−100

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

5
0.2

20 Ta=25°C
f=1MHz

10 IE=0A

5

2
1

0.5

1

2

5

10

20

50

100

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.9 Collector output capacitance
vs. collector-base voltage

Rev.A

2/3

2SC4061K / 2SC3415S / 2SC4015

Ta=25°C
∗single
nonrepetitive
pulse

500m
IC Max (Pulse)

200m

s∗
m
s∗
=1
0m
Pw
s∗
=1
m
Pw
00
=1 s∗
Pw w=2
P

COLLECTOR CURRENT : IC (A)

Transistors

DC

100m
50m
20m
10m
5m
2m
1m
1

2

5

10 20

50 100 200

500 1000

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.10 Safe operating area

Rev.A

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

www.s-manuals.com



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