2SC5826 Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes C5, C5-**, C5-***, C50, C5103, C5344, C546A, C546B, C547, C547B, C547C, C5591, C5826, C5880, C5=***. Datasheets 2SC5103, 2SC5344, 2SC5591, 2SC5826, 2SC5880, BC546A, BC546B, BC547, BC547B, BC547C, BZT52H-C68, BZX585-B3V6, MMSZ5225, OPA350EA, RT8020DPQW, RT8259GJ6, RT9013B-33PU5, UDZS30B.

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2SC5826

Transistors

Rev.A 1/3

Power transistor (60V, 3A)

2SC5826

zFeatures

1) High speed switching.

(tf : Typ. : 30ns at IC = 3A)

2) Low saturation voltage, typically

(Typ. : 200mV at IC = 2A, IB = 0.2mA)

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SA2073

zApplications

Low frequency amplifier

High speed switching

zDimensions (Unit : mm)

Symbol : C5826

(1) Emitter

(2) Collector

(3) Base

ATV

Taping specifications

zStructure

NPN Silicon epitaxial planar transistor

zPackaging specifications

Taping

2SC5826

Type TV2

2500

Package

Basic ordering unit (pieces)

Code

zAbsolute maximum ratings (Ta=25°C)

Parameter

V

V

V

A

A

W

°C

°C

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

t

j

t

stg

Limits Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

DC

Pulsed

60

60

6

3

6

1.0

150

−55 to 150

∗

∗Pw=100ms

2SC5826

Transistors

Rev.A 2/3

zElectrical characteristics (Ta=25°C)

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Corrector output capacitance

Turn-on time

Storage time

Fall time

Parameter Symbol Min. Typ. Max. Unit Condition

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

V

CE (sat)

h

FE

f

T

Cob

ton

tstg

tf

∗1 Non repetitive pulse

∗2 See Switching charactaristics measurement circuits

I

C

=1mA

I

C

=100µA

I

E

=100µA

V

CB

=40V

V

EB

=4V

I

C

=2A

I

B

=0.2A

V

CE

=2V

I

C

=100mA

V

CE

=10V

I

E

= −100mA

f=10MHz

V

CB

=10V

I

E

=0mA

f=1MHz

∗1

∗1

∗2

60

60

6

−

−

−

120

−

−

−

−

−

−

−

−

−

−

200

−

200

20

50

150

30

−

−

−

1.0

1.0

500

390

−

−

−

−

−

V

V

V

µA

µA

mV

−

MHz

pF

ns

ns

ns

I

C

=3A

I

B1

=300mA

I

B2

= −300mA

V

CC

25V

zhFE RANK

Q

120−270

R

180−390

zElectrical characteristic curves

0 1.510.5

0.01

0.1

1

10

VCE=2V

BASE TO EMITTER VOLTAGE : V

BE

(V)

Fig.1 Grounded Emitter

Propagation Characteristics

COLLECTOR CURRENT : I

C

(A)

Ta=125°C

Ta=25°C

Ta= −40°C

0.001 0.01 0.1 1 10

1

10

100

1000

COLLECTOR CURRENT : I

C

(A)

DC CURRENT GAIN : h

FE

Fig.2 DC Current Gain vs.

Collector Current (Ι)

Ta=25°C

V

CE

=5V

V

CE

=3V

V

CE

=2V

0.001 0.01 0.1 1 10

1

10

100

1000

COLLECTOR CURRENT : IC (A)

DC CURRENT GAIN : hFE

Fig.3 DC Current Gain vs.

Collector Current (ΙΙ)

Ta=125°C

Ta=25°C

Ta= −40°C

V

CE

=2V

0.001 1010.10.01

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

COLLECTOR SATURATION

VOLTAGE : VCE (sat) (V)

Ta=25°C

I

C

/ I

B

=20 / 1

I

C

/ I

B

=10 / 1

Fig.4

Collector-Emitter Saturation

Voltage vs. Collector Current (Ι)

0.001 1010.10.01

0.01

0.1

1

10

COLLECTOR CURRENT : I

C

(A)

COLLECTOR SATURATION

VOLTAGE : V

CE (sat)

(V)

I

C

/ I

B

=10 / 1

Fig.5

Collector-Emitter Saturation

Voltage vs. Collector Current (ΙΙ)

Ta=125°C

Ta=25°C

Ta= −40°C

COLLECTOR CURRENT : I

C

(A)

BASE EMITTER SATURATION

VOLTAGE : V

BE (sat)

(V)

0.001 1010.10.01

0.01

0.1

1

10

IC / IB=10 / 1

Ta=125°C

Ta=25°C

Ta= −40°C

Fig.6 Base-Emitter Saturation

Voltage vs. Collecter Current

2SC5826

Transistors

Rev.A 3/3

EMITTER CURRENT : I

E

(A)

Fig.7 Transition Frequency

TRANSITION FREQUENCY : fT (MHz)

0.001 1010.10.01

1

10

100

1000

Ta=25°C

V

CE

=10V

0.1 1 10 100

1

10

100

BASE TO COLLECTOR VOLTAGE : V

CB

(V)

Fig.8

Collector Output Capacitance

Ta=25°C

f=1MHz

COLLECTOR OUTPUT

CAPACITANCE : Cob (pF)

0.01 1010.1

10

100

1000

COLLECTOR CURRENT : I

C

(A)

SWITCHING TIME : (ns)

Fig.9 Switching Time

Ta=25°C

VCC=25V

IC / IB=10 / 1

tstg

tf

ton

0.01 1001010.1

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

0.001

0.01

0.1

1

10

COLLECTOR CURRENT : IC (A)

Fig.10 Safe Operating Area

Single

non repetitive

Pulsed

100ms

10ms

1ms

DC

zSwitching characteristics measurement circuits

Collector current

waveform

Base current

waveform

I

B1

I

B1

90%

10%

I

B2

I

B2

I

C

V

IN

P

W

I

C

R

L

=8.3Ω

V

CC

25V

P

W

50 S

Duty cycle ≤ 1%

ton tstg tf

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

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The contents described herein are subject to change without notice. The specifications for the

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Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

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Appendix1-Rev2.0

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Appendix

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