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PROCEEDINGS OF SPIE
SPIEDigitalLibrary.org/conference-proceedings-of-spie

Front Matter: Volume 9440

, "Front Matter: Volume 9440," Proc. SPIE 9440, International Conference on
Micro- and Nano-Electronics 2014, 944001 (22 December 2014); doi:
10.1117/12.2184083
Event: The International Conference on Micro- and Nano-Electronics 2014,
2014, Zvenigorod, Russian Federation
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PROCEEDINGS OF SPIE

International Conference on
Micro- and Nano-Electronics 2014
Alexander A. Orlikovsky
Editor
6–10 October 2014
Zvenigorod, Russian Federation
Organized by
Institute of Physics and Technology (Russian Federation)
JSC Mikron (Russian Federation)
Sponsored by
Russian Foundation for Basic Researches (Russian Federation)
Federal Agency of Scientific Organizations (Russian Federation)
Russian Academy of Sciences (Russian Federation)
TechnoInfo Ltd. (United Kingdom and Russian Federation)
NIX Company (Russian Federation)
Rohde & Schwarz (Germany and Russian Federation)
JSC SemiTEq (Russian Federation)
Published by
SPIE

Volume 9440

Proceedings of SPIE 0277-786-786X, V.9440
SPIE is an international society advancing an interdisciplinary approach to the science and application of light.

International Conference on Micro- and Nano-Electronics 2014, edited by
Alexander A. Orlikovsky, Proc. of SPIE Vol. 9440, 944001 · © 2014 SPIE
CCC code: 0277-786X/14/$18 · doi: 10.1117/12.2184083
Proc. of SPIE Vol. 9440 944001-1
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The papers included in this volume were part of the technical conference cited on the cover and
title page. Papers were selected and subject to review by the editors and conference program
committee. Some conference presentations may not be available for publication. The papers
published in these proceedings reflect the work and thoughts of the authors and are published
herein as submitted. The publisher is not responsible for the validity of the information or for any
outcomes resulting from reliance thereon.
Please use the following format to cite material from this book:
Author(s), "Title of Paper," in The International Conference on Micro- and Nano-Electronics 2014,
edited by Alexander A. Orlikovsky, Proceedings of SPIE Vol. 9440 (SPIE, Bellingham, WA, 2014)
Article CID Number.
ISSN: 0277-786X
ISBN: 9781628415551
Published by
SPIE
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Paper Numbering: Proceedings of SPIE follow an e-First publication model, with papers published
first online and then in print. Papers are published as they are submitted and meet publication
criteria. A unique citation identifier (CID) number is assigned to each article at the time of the first
publication. Utilization of CIDs allows articles to be fully citable as soon as they are published
online, and connects the same identifier to all online, print, and electronic versions of the
publication. SPIE uses a six-digit CID article numbering system in which:
ƒ The first four digits correspond to the SPIE volume number.
ƒ The last two digits indicate publication order within the volume using a Base 36 numbering
system employing both numerals and letters. These two-number sets start with 00, 01, 02, 03, 04,
05, 06, 07, 08, 09, 0A, 0B … 0Z, followed by 10-1Z, 20-2Z, etc.
The CID Number appears on each page of the manuscript. The complete citation is used on the
first page, and an abbreviated version on subsequent pages.

Proc. of SPIE Vol. 9440 944001-2
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Contents
vii

Author Index

ix

Conference Committees

xv
SESSION 1

Introduction
MICRO- AND NANOELECTRONIC MATERIALS AND FILMS I

9440 02

The chemistry screening for ultra low-k dielectrics plasma etching [9440-70]

9440 03

Optically transparent fluoro-containing polyimide films with low dielectric permeability
[9440-23]

9440 04

Electrical properties of ALD HfO2 (EOT 0.47 nm) [9440-69]

9440 05

Influence of doping on the crystallization kinetics of Ge-Sb-Te thin films for phase-change
memory application [9440-79]

9440 06

Investigation of transport mechanisms in Bi doped Ge2Sb2Te5 thin films for phase change
memory application [9440-66]

9440 07

Nanostructured chalcogenide materials for memory switching devices [9440-7]

9440 08

Electrochemical formation of Ag-Sn layers on copper plates [9440-50]

9440 09

TaNx and Ta/graded Ta(N)/TaN multilayer diffusion barriers [9440-59]

9440 0A

Surface treatment of polyimide film for metal magnetron deposition in vacuum [9440-22]

SESSION 2

MICRO- AND NANOELECTRONIC MATERIALS AND FILMS II

9440 0B

Reversible and non-reversible changes in nanostructured Si in humid atmosphere [9440-63]

9440 0C

Low-voltage field desorption in carbon nanotubes [9440-60]

9440 0D

Study of growth kinetics of amorphous carbon nanopillars formed by PECVD [9440-15]

9440 0E

Formation of gold and silver cluster arrays using vacuum-thermal evaporation on a nonheated substrate [9440-51]

9440 0F

Formation of Si nanocrystals in SiOx, SiOx:C:H films and Si/SiO2 multilayer nanoheterostructures by pulse laser treatments [9440-6]

iii

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9440 0G

Study of hydrogen states in a-Si:H films, dehydrogenization treatments and influence of
hydrogen on nanosecond pulse laser crystallization of a-Si:H [9440-5]

9440 0H

New generation photoelectric converter structure optimization using nano-structured
materials [9440-55]

9440 0I
SESSION 3

Different methods of forming multicomponent metal sulfide by SILAR-techniques [9440-43]
MICRO- AND NANOELECTRONIC TECHNOLOGIES AND EQUIPMENT

9440 0J

Some peculiarities of the new method of a relief creating by the direct electron-beam
etching of resist [9440-17]

9440 0K

Formation of fast neutral beams and their using for selective etching [9440-26]

9440 0L

Carbon and fluorine co-implantation for boron diffusion suppression in extremely ultra
shallow junctions [9440-68]

SESSION 4

DIAGNOSTICS AND METROLOGY

9440 0M

Approaches to a dies decoupling during failure analysis of the 3D package integrated
circuits [9440-78]

9440 0N

Electrochemical recovery of damaged bonding area during failure analysis of the modern
integrated circuits [9440-77]

9440 0O

Modification of cantilevers for atomic-force microscopy using the method of exposure
defocused ion beam [9440-3]

SESSION 5

PHYSICS AND TECHNOLOGY OF MICRO- AND NANODEVICES

9440 0P

High-temperature single-electron transistor based on a gold nanoparticle [9440-76]

9440 0R

Photocurrent relaxations and gain in semiconductor nanowires [9440-57]

9440 0S

Photoresponse beyond the red border of the internal photoeffect: designing problems of
photon counting schemes in 10µm band [9440-40]

9440 0T

Large scale (~25 m2) metal diffraction grating of submicron period as possible
optoelectronic detector for short scalar gravitational waves [9440-42]

9440 0U

Development of driving setup for micromechanical friction vacuum gauge [9440-56]

9440 0V

The sensor of surface defects based on electrical impedance tomography technique
[9440-28]

9440 0W

Electrostatically actuated MEMS switch with resistive contact [9440-8]

iv

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SESSION 6

MODELING AND SIMULATION I

9440 0X

SOI layout decomposition for double patterning lithography on high-performance
computer platforms [9440-54]

9440 0Y

Monte Carlo simulation of boron doping profile of fin and trench structures by plasma
immersion ion implantation [9440-72]

9440 0Z

Aluminum anodization process modeling approach [9440-2]

9440 10

Self-organization phenomena during electrochemical formation of nanoclusters in silicon
[9440-29]

SESSION 7

MODELING AND SIMULATION II

9440 11

Unified description of I-V characteristics in field-effect and bipolar transistors based on
current density continuity equation solution [9440-34]

9440 12

A simplified analytical model of merged MOS [9440-10]

9440 13

Monte Carlo simulation of hot electron transport in deep submicron SOI MOSFET [9440-21]

9440 14

Numerical modeling of functionally integrated injection lasers-modulators [9440-18]

9440 15

Iterative approach as alternative to S-matrix in modal methods [9440-27]

9440 16

Conducting media with spatial dispersion in a microwave field: eigenvalue problem for
permittivity operator [9440-38]

9440 17

Simulation of devices based on carbon nanotubes and graphene [9440-19]

9440 18

Modeling and simulation of nanoelectronics devices in cognitive nanoinformatics [9440-1]

SESSION 8

MODELING AND SIMULATION III

9440 19

Radiation-induced mismatch enhancement in 65nm CMOS SRAM for space applications
[9440-36]

9440 1A

Estimation technique for SET-tolerance of combinational ICs [9440-35]

9440 1B

Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation
[9440-47]

9440 1C

Modeling and simulation of dose effects in bipolar analog integrated circuits [9440-48]

v

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SESSION 9

QUANTUM INFORMATICS

9440 1D

Antiferromagnetic anisotropic XXZ chain of spins S= 1/2 in the presence of an
inhomogeneous transverse magnetic field as a basis for the multiqubit quantum register
simulation [9440-71]

9440 1E

Quantum discord in central spin model [9440-44]

9440 1F

Quantum key distribution over 300km [9440-45]

9440 1G

Quantum diamond chip under network optical control [9440-20]

9440 1H

Numerical and analytical research of the impact of decoherence on quantum circuits
[9440-64]

9440 1I

The study of amplitude and phase relaxation impact on the quality of quantum information
technologies [9440-62]

9440 1J

The study of classical dynamical systems using quantum theory [9440-73]

9440 1K

Root approach for estimation of statistical distributions [9440-75]

9440 1L

Finite frames constructed by solving Fekete problem and accuracy of quantum
tomography protocols based on them [9440-61]

9440 1M

Qubit model of Jaynes-Cammings-Hubbard with phonon environment for exciton transport
in light-harvesting FMO complex [9440-46]

9440 1N

Biologically inspired path to quantum computer [9440-32]

vi

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Authors
Numbers in the index correspond to the last two digits of the six-digit citation identifier (CID) article
numbering system used in Proceedings of SPIE. The first four digits reflect the volume number. Base 36
numbering is employed for the last two digits and indicates the order of articles within the volume.
Numbers start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B...0Z, followed by 10-1Z, 20-2Z, etc.
Abramov, Igor I., 17
Antonenko, A. H., 0F, 0G
Antonov, Andrey A., 19
Antonov, S. P., 0O
Arzhanova, Natalia A., 10
Babich, Alexey V., 05
Baklanov, Mikhail R., 02
Balbekov, A., 1A
Bantysh, B. I., 1H, 1I
Belinsky, L. V., 1L
Belov, Alexey N., 07, 0Z
Bogdanov, Yuri I., 1H, 1I, 1J, 1K, 1L
Bogdanova, N. A., 1J, 1K
Borgardt, N. I., 0D, 0E
Borzdov, A. V., 13
Borzdov, V. M., 13
Boyko, Anton N., 0U
Bruk, M. A., 0J
Chaplygin, Yuri A., 0O
Cherkov, A. G., 0F
Chernyaev, A. P., 16
Chernyavskiy, A. Yu., 1H, 1I
Dagesyan, S. A., 0P
Danilov, I. A., 1C
Dedkova, A., 0D
Denisenko, Mark A., 14
Divochiy, A., 1F
Dolotov, Pavel S., 19
Dresvyannikov, Maxim A., 0S, 16
Dronov, A., 0H, 0I
Drosdetsky, M. G., 1C
Dubkov, S. V., 0D, 0E
Elezov, M., 1F
Emelianov, A., 0C
Emeliyanov, V. V., 1B
Fastovets, D. V., 1H
Galimov, A. M., 1C
Galkov, M. S., 0G
Gavrilin, I., 0H
Gavrilov, Sergey A., 07, 0B, 0I, 0Z
Gismatulin, A. A., 0F
Goltsman, G., 1F
Gorbunov, Maxim S., 19, 1A
Grishina, Y. S., 0D, 0E
Gromov, Dmitry G., 06, 0D, 0E
Holevo, A. S., 1H
Isaeva, Alina S., 0V
Iskakov, R., 03
Kalnov, V. A., 09, 0J

Kamaev, G. N., 0F, 0G
Karuzskii, Aleksandr L., 0S, 16
Kateev, Igor Yu., 1G
Kelm, E. A., 0M, 0N
Khorin, I., 09
Kirilenko, E., 0D
Kochubey, S. A., 0G
Kokin, A. A., 1D
Kokin, V. A., 1D
Kolomejtseva, N. V., 17
Konoplev, Boris G., 14
Korobova, N., 03
Kovalyuk, V., 1F
Kovyrkin, Pavel B., 0U
Kozyukhin, Sergey A., 05, 06
Krasnoborodko, S. Yu., 0O
Kravtsova, V., 03
Krishtab, M., 02
Kudrya, V. P., 0K
Kukhtyaeva, V. R., 08
Kurochkin, V., 1F
Kurochkin, Y., 1F
Labunov, Vladimir A., 17
Lazarenko, Petr I., 06
Lazzarino, F., 02
Lebedev, Anatoly A., 19, 1C
Lisovsky, I. P., 0F
Litovchenko, Vladimir G., 0F
Lukichev, Vladimir F., 0L, 1H, 1I
Maidanchuk, I. Yu., 0F
Maishev, Yu. P., 0K
Makarchuk, Vladimir, 0X
Miakonkikh, Andrey V., 0L, 0Y
Mikhailova, M. S., 08
Milovanov, R. A., 0M, 0N
Mironov, Rostislav E., 05
Mityagin, Yu. A., 16
Molchanova, A., 04
Molodtsova, G., 0M, 0N
Naumov, Victor V., 0W
Neizvestniy, Igor G., 0F
Nersesyan, Suren, 0R
Nikolaev, V., 0A
Ogryzko, Vasily, 1N
Orlikovsky, Alexander A., 1G, 1H, 1I
Orlikovsky, Nikolay A., 09, 1G
Ozhegov, R., 1F
Ozhigov, Yuri I., 1M, 1N
Pavlova, L. M., 0E
vii

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Perestoronin, Anatoly V., 0S, 16
Petrosyan, Stepan, 0R
Petrov, V., 0A
Petukhov, I. N., 08
Petukhov, V., 0C
Popova, E., 0I
Presnukhina, A., 0I
Prikhodko, O., 03
Prokaznikov, Alexander V., 10
Prokaznikov, Michael A., 10
Pyatilova, O., 07, 0B
Rakitin, A., 12
Rakitin, V., 12
Redichev, Evgeniy N., 06
Rezchikova, Elena V., 18
Rogozhin, Aleksander E., 04, 09, 0J, 0L
Romanova, I. A., 17
Roschin, V. M., 08
Rozanov, R., 07
Rudakov, Valeriy I., 0L
Rudenko, Konstantin V., 0L, 0Y
Ryndin, Eugeny A., 0V, 14
Safronova, N. A., 0G
Savitskiy, A. I., 0E
Selyukov, Roman V., 0W
Semenihin, I. A., 1H
Semenikhin, Igor A., 15
Shahsenov, Izat S., 0Y
Shakhnov, Vadim A., 18
Shalimov, Andrei S., 0U
Sherchenkov, Alexey A., 05, 06
Shevchuk, S. L., 0K
Shevyakov, Vasiliy I., 07, 0O, 0Z
Shilyaeva, Yu. I., 08
Shnaider, Alexandra I., 19
Shtern, Maxim Y., 06
Shtern, Yuri I., 05
Skovoroda, Nikita A., 1M
Smagulova, S. A., 0O
Smirnov, K., 1F
Soldatov, E. S., 0P
Spirin, A. V., 0J
Stepanov, A. S., 0P
Streltsov, D. R., 0J
Timoshenkov, Sergei P., 0U
Timoshenkov, Sergey P., 06, 0A, 0B, 0C
Trifonov, A. Y., 0E
Tskhovrebov, Andrey M., 0S
Tsukanov, Alexander V., 1G
Turin, V. O., 1C
Umersakova, M., 03
Useinov, R. G., 1B
Uvarov, Ilya V., 0W
Vachtomin, Y., 1F
Vatuev, A. S., 1B
Verstov, Vladimir, 0X
Vertyanov, D., 0A
Volchkov, N. A., 16
Volodin, V. A., 0F, 0G
Vorobiev, Maksim I., 0Z

V'yurkov, V. V., 13
Yesayan, Ashkhen, 0R
Zanuccoli, Mauro, 15
Zebrev, Gennady I., 11, 19, 1B, 1C
Zharik, G., 0P
Zheleznyakova, A., 07, 0H, 0I
Zherikhina, Larisa N., 0S
Zhigalov, V., 0B, 0C
Zhikharev, E. N., 0J
Zhukov, Valery A., 0T
Zinchenko, Lyudmila A., 0X, 18
Zobov, Vladimir Eu., 1E
Zotovich, A., 02
Zubov, D. N., 0M, 0N

viii

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Conference Committees

Conference Chair
Evgeny P. Velikhov, Russian Scientific Center “Kurchatov Institute”
(Russian Federation)
Conference Co-chairs
Alexander A. Orlikovsky, Institute of Physics and Technology
(Russian Federation)
Gennadiy Ya. Krasnikov, JSC Mikron, Zelenograd (Russian Federation)
International Advisory Committee
Alexander L. Aseev, Institute of Semiconductor Physics
(Russian Federation)
Dmitri V. Averin, Stony Brook University (United States)
Mikhail R. Baklanov, International Microelectronic Center (Belgium)
Rupert Chabicovsky, Technical University, Vienna (Austria)
Yuri V. Gulyaev, Kotel'nikov Institute of Radioengineering and Electronics
(Russian Federation)
Huey-Liang Hwang, National Tsing Hua University (Taiwan)
Vladimir A. Labunov, Belarusian State University of Informatics and
Radioelectronics (Belarus)
Konstantin K. Likharev, Stony Brook University (United States)
Vladimir G. Litovchenko, Institute of Semiconductor Physics, NASU
(Ukraine)
Jun-ichi Nishizawa, Semiconductor Research Institute (Japan)
Konstantin S. Novoselov, University of Manchester (United Kingdom)
Juras Požela, Semiconductor Physics Institute (Lithuania)
Iwo W. Rangelow, University of Ilmenau (Germany)
Heiner Ryssel, Fraunhofer Institute of Integrated Systems and Devices
Technology (Germany)
Thomas Skotnicki, ST Microelectronics (France)
Robert A. Suris, Ioffe Physical-Technical Institute (Russian Federation)
Dorel Toma, Tokyo Electron Corporation, U.S. Technology Development
Center (United States)
Akira Toriumi, University of Tokyo (Japan)

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Program Committee
Alexander A. Orlikovsky, Chair, Institute of Physics and Technology
(Russian Federation)
Igor G. Neizvestnyi, Co-chair, Institute of Semiconductor Physics
(Russian Federation)
Vladimir F. Lukichev, Co-chair, Institute of Physics and Technology
(Russian Federation)
Program Committee Members
Andrey F. Alexandrov, Lomonosov Moscow State University
(Russian Federation)
Vitaliy V. Aristov, Institute of Microelectronics Technology and High-Purity
Materials (Russian Federation)
Vladimir B. Betelin, Scientific Research Institute for System Analysis
(Russian Federation)
Yuri I. Bogdanov, Institute of Physics and Technology (Russian Federation)
Yuri A. Chaplygin, National Research University of Electronic Technology
(Russian Federation)
Boris G. Gribov, Scientific Research Institute on Especially Pure Materials
(Russian Federation)
Fadey F. Komarov, Belarusian State University (Belarus)
Peter S. Kop'ev, Ioffe Physical-Technical Institute (Russian Federation)
Peter P. Maltsev, Institute on Ultra High Frequency Semiconductor
Electronics (Russian Federation)
Alexey N. Nazarov, Institute of Semiconductor Physics, NASU (Ukraine)
Yuri I. Ozhigov, Lomonosov Moscow State University (Russian Federation)
Vladislav Ya. Panchenko, Institute on Laser and Informatics Technologies
(Russian Federation)
Alexander S. Rudy, Yaroslavl Demidov State University
(Russian Federation)
Nikolay N. Salaschenko, Institute for Physics of Microstructures
(Russian Federation)
Kev M. Salikhov, Zavoisky Physical-Technical Institute
(Russian Federation)
Alexander S. Sigov, Moscow State Technical University of
Radioengineering, Electronics, and Automation (Russian Federation)
Pavel A. Todua, Moscow Institute of Physics and Technology
(Russian Federation)
Vladimir V. Vyurkov, Institute of Physics and Technology
(Russian Federation)

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Organizing Committee
Vladimir F. Lukichev, Chair, Institute of Physics and Technology
(Russian Federation)
Konstantin V. Rudenko, Co-chair, Institute of Physics and Technology
(Russian Federation)
Organizing Committee Members
Igor I. Abramov, Belarusian State University of Informatics and
Radioelectronics (Belarus)
Ildar I. Amirov, Institute of Physics and Technology, Yaroslavl Branch
(Russian Federation)
Yuri I. Bogdanov, Institute of Physics and Technology (Russian Federation)
Anastas A. Buharaev, Zavoisky Physical-Technical Institute
(Russian Federation)
Mikhail A. Chuev, Institute of Physics and Technology (Russian Federation)
Alexander A. Gorbazevitch, Lebedev Physical Institute
(Russian Federation)
Eugeny S. Gornev, JSC Mikron, Zelenograd (Russian Federation)
Mikhail A. Korolev, National Research University of Electronic Technology
(Russian Federation)
Sergey A. Nikitov, Kotel'nikov Institute of Radioengineering and
Electronics (Russian Federation)
Oleg P. Pchelyakov, Institute of Semiconductor Physics
(Russian Federation)
Vladislav Yu. Rubaev, NIX Company (Russian Federation)
Local Organizing Committee
Vladimir F. Lukichev, Chair of the ICMNE-2014 Organizing Committee
Yuri I. Bogdanov, Chair of the Extended Session QI-2014
Vladimir P. Kudrya, Scientific Secretary of ICMNE-2014
Sergey I. Skalkin, Financial Director of ICMNE-2014
Alexander N. Astakhov, Administrator of ICMNE-2014
Alexey M. Dianov, PR-support of ICMNE-2014
Andrey Yu. Chernyavskiy
Andrey V. Miakonkikh
Alexander E. Rogozhin
Igor A. Semenikhin
Alexander V. Tsukanov
Vladimir V. Vyurkov
Lidiya M. Besschastnova
Irina Yu. Lukianova
Irina Novojilova

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Session Chairs
Plenary Session I
Vladimir F. Lukichev, Institute of Physics and Technology
(Russian Federation)
Plenary Session II. Quantum Informatics I
Yuri I. Bogdanov, Institute of Physics and Technology (Russian Federation)
Plenary Session III
Vladimir F. Lukichev, Institute of Physics and Technology
(Russian Federation)
1

Materials and Films I
Andrey V. Miakonkikh, Institute of Physics and Technology
(Russian Federation)

2

Physics and Technology of Micro- and Nanodevices I
Eugeny Danilkin, Crocus Nanoelectronics (Russian Federation)

3

Quantum Informatics II
Sergey P. Kulik, Lomonosov Moscow State University (Russian Federation)

4

Materials and Films II
Konstantin V. Rudenko, Institute of Physics and Technology
(Russian Federation)

5

Physics and Technology of Micro- and Nanodevices II
Vladimir F. Lukichev, Institute of Physics and Technology
(Russian Federation)

6

Silicon-on-Insulator and Low-Dimensional Structures
Vladimir V. Vyurkov, Institute of Physics and Technology
(Russian Federation)

7

Materials and Films III
Ildar I. Amirov, Institute of Physics and Technology, Yaroslavl Branch
(Russian Federation)

8

Physics and Technology of Micro- and Nanodevices III
Vladimir V. Vyurkov, Institute of Physics and Technology
(Russian Federation)

9

Quantum Informatics III
Vladimir Eu. Zobov, Kirensky Institute of Physics (Russian Federation)

10

Materials and Films IV
Konstantin V. Rudenko, Institute of Physics and Technology
(Russian Federation)

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11

Meeting of the International Association of the Academies of Sciences
Alexander A. Orlikovsky, Institute of Physics and Technology
(Russian Federation)

12

Quantum Informatics IV
Sergey A. Moiseev, Kazan Physical-Technical Institute (Russian Federation)

13

Simulation and Modeling I
Vladimir V. Vyurkov, Institute of Physics and Technology
(Russian Federation)

14

Micro- and Nanoelectronics Technologies and Equipment
Alexander E. Rogozhin, Institute of Physics and Technology
(Russian Federation)

15

Quantum Informatics V
Eduard B. Fel'dman, Institute of Problems of Chemical Physics
(Russian Federation)

16

Simulation and Modeling II
Boris G. Konoplev, Institute of Nanotechnology, Electronics and Electronic
Equipment Engineering of Southern Federal University
(Russian Federation)

17

Metrology and Characterization
Andrey V. Miakonkikh, Institute of Physics and Technology
(Russian Federation)

18

Quantum Informatics VI
Farid M. Ablayev, Institute for Informatics (Russian Federation)

19

Simulation and Modeling III
Mikhail A. Chuev, Institute of Physics and Technology
(Russian Federation)

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Introduction
The volume contains selected papers presented at the International Conference
"Micro- and Nano-Electronics 2014" (ICMNE-2014) which was held in Zvenigirod,
Moscow Region, Russia 6–10 October 2014. ICMNE is a biannual conference
covering the main fields of micro- and nano-electronic technologies and device
physics. Since 1992, the Institute of Physics and Technology (Moscow, Russian
Federation) has been the permanent organizer of ICMNE, and it became an SPIEaffiliated conference in 2003.
ICMNE-2014 included an extended session, "Quantum Informatics 2014". The
ICMNE-2014 scope contained such scientific and technological fields as microand nano-electronic materials and films; technologies and equipment; metrology,
physics and technologies of micro- and nano-devices; simulation and modeling;
silicon-on-insulator and low-dimensional structures; and quantum informatics.
ICMNE-2014 included three plenary sessions and 19 topical sessions focusing on the
following areas:
•
•
•
•
•
•
•
•

Physics and Technology of Micro- and Nano-Devices
Materials and Films
Quantum Informatics
Silicon-on-Insulator and Low-Dimensional Structures
Simulation and Modeling
Micro- and Nano-Electronics Technologies and Equipment
Metrology and Characterization
Superconducting Structures and Devices

The scientific program was based on invited and contributed papers from the
scientists employed at European and Siberian Regions of Russia, Armenia, Belarus,
Belgium, Germany, France, United States, and Japan. The invited lectures on the
current achievements and challenges in the contemporary microelectronics were
delivered by the scientists from France, Belgium, Germany, France, Japan, and
Russia. The session contributions were made by academic institutions and
universities, as well as from industry. About 100 contributions were oral presentations
and about 80 were presented as posters.
We hope these sessions resulted in helpful discussions at the session and between
attendees will promote continuing research activity in the microelectronic
community. Additional information about ICMNE-2014 can be found at the
conference website http://www. icmne.ftian.ru

Alexander A. Orlikovsky

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