AO3404 Datasheet. Www.s Manuals.com. R10 Ao

User Manual: Marking of electronic components, SMD Codes A4, A4*, A4**, A4**B, A4-, A4-**, A4-***, A41, A44, A45A, A4775, A47A, A48A, A4=**, A4=***, A4W, A4p, A4s, A4t. Datasheets 1S2836, A4775E5R, AO3404, APS1006ET5-1.2, BAV70, BAV70S, BAV70T, BAV70U, BAV70W, BFU540, EMA4, FMA4A, HSMS-2804, HSMS-280F, LM8261M5, LMV710M5, LMV711M6, MIC803-31D3VC3, MIC803-31D3VM3, MMBD2836, MMBTA44, N6200M5G-1.2, RT8008GJ5, RT8008PJ5, RT8202BGQW, RT9011-KMPQV, RT9161-20PV, RT9198-30PY, RT9261A-50PB, RT9284B-20GJ6, RT9284B-20PJ6, RT9818A-

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AO3404

30V N-Channel MOSFET

General Description Product Summary

V

DS

I

D

(at V

GS

=10V) 5A

R

DS(ON)

(at V

GS

=10V) < 31mΩ

R

DS(ON)

(at V

GS

=4.5V) < 43mΩ

Symbol

V

DS

V

GS

I

DM

T

J

, T

STG

Symbol

t ≤ 10s

Steady-State

Steady-State

R

θJL

Junction and Storage Temperature Range -55 to 150 °C

Power Dissipation

B

P

D

T

A

=70°C 0.9 W

1.4

T

A

=25°C

Units

Thermal Characteristics

Parameter Typ Max

The AO3404 uses advanced trench technology to provide

excellent R

DS(ON)

and low gate charge. This device may

be used as a load switch or in PWM applications.

V

Maximum UnitsParameter

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

30V

Drain-Source Voltage 30

I

D

Maximum Junction-to-Ambient

A D

V±20

Continuous Drain

Current

5

Gate-Source Voltage

4

T

A

=25°C

T

A

=70°C

Pulsed Drain Current

C

°C/W

R

θJA

80

Maximum Junction-to-Ambient

A

70

100

90

20

A

Maximum Junction-to-Lead °C/W

°C/W

63

125

SOT23

Top View Bottom View

D

G

S

G

S

D

G

D

S

Rev 10: February 2011 www.aosmd.com Page 1 of 5

AO3404

Symbol Min Typ Max Units

BV

DSS

30 V

V

DS

=30V, V

GS

=0V 1

T

J

=55°C 5

I

GSS

±100 nA

V

GS(th)

Gate Threshold Voltage 1.2 1.8 2.4 V

I

D(ON)

20 A

25.5 31

T

J

=125°C 41 50

34 43 mΩ

g

FS

15 S

V

SD

0.76 1 V

I

S

1.5 A

C

iss

255 310 pF

C

oss

45 pF

C

rss

35 50 pF

R

g

1.6 3.25 4.9 Ω

Q

g(10V)

5.2 6.3 nC

Qg

(4.5V)

2.55 3.2

Q

gs

0.85 nC

Q

gd

1.3 nC

t

D(on)

4.5 ns

t

r

2.5 ns

t

D(off)

14.5 ns

t

f

3.5 ns

t

rr

8.5 ns

Q

rr

2.2 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Input Capacitance

Output Capacitance

Turn-On Rise Time

I

F

=5A, dI/dt=100A/µs

V

GS

=0V, V

DS

=15V, f=1MHz

SWITCHING PARAMETERS

Body Diode Reverse Recovery Charge

V

DS

=V

GS

I

D

=250µA

V

GS

=4.5V, I

D

=4A

Forward Transconductance

Body Diode Reverse Recovery Time

V

GS

=10V, I

D

=5A

Reverse Transfer Capacitance

I

F

=5A, dI/dt=100A/µs

Maximum Body-Diode Continuous Current

mΩ

V

GS

=10V, V

DS

=15V, R

L

=3Ω,

R

GEN

=3Ω

DYNAMIC PARAMETERS

Turn-Off DelayTime

Turn-On DelayTime

Gate resistance V

GS

=0V, V

DS

=0V, f=1MHz

V

DS

=5V, I

D

=5A

R

DS(ON)

Static Drain-Source On-Resistance

I

DSS

µA

Zero Gate Voltage Drain Current

Turn-Off Fall Time

Total Gate Charge

V

GS

=10V, V

DS

=15V, I

D

=5A

Gate Source Charge

Gate Drain Charge

I

S

=1A,V

GS

=0V

Diode Forward Voltage

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Drain-Source Breakdown Voltage

On state drain current

I

D

=-250µA, V

GS

=0V

V

GS

=10V, V

DS

=5V

V

DS

=0V, V

GS

=±20V

Gate-Body leakage current

A. The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J

=25°C.

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse ratin g.

Rev 10: February 2011 www.aosmd.com Page 2 of 5

AO3404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

17

5

2

10

0

18

40

0

5

10

15

1 1.5 2 2.5 3 3.5 4 4.5

V

GS

(Volts)

Figure 2: Transfer Characteristics (Note E)

I

D

(A)

20

25

30

35

40

0 3 6 9 12 15

I

D

(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage (Note E)

R

DS(ON)

(mΩ

Ω

Ω

Ω)

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.2 0.4 0.6 0.8 1.0 1.2

V

SD

(Volts)

Figure 6: Body-Diode Characteristics (Note E)

I

S

(A)

25°C

125°C

0.8

1

1.2

1.4

1.6

1.8

2

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

(Note E)

Normalized On-Resistance

V

GS

=10V

I

D

=5A

V

GS

=4.5V

I

D

=4A

20

40

60

80

100

2 4 6 8 10

V

GS

(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

R

DS(ON)

(mΩ

Ω

Ω

Ω)

25°C

125°C

V

DS

=5V

V

GS

=4.5V

I

D

=5A

25°C

125°C

0

5

10

15

20

25

30

012345

V

DS

(Volts)

Fig 1: On-Region Characteristics (Note E)

I

D

(A)

V

GS

=3V

7V

10V

3.5V

4V

4.5V

V

GS

=10V

Rev 10: February 2011 www.aosmd.com Page 3 of 5

AO3404

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

2

4

6

8

10

0123456

Q

g

(nC)

Figure 7: Gate-Charge Characteristics

V

GS

(Volts)

0

50

100

150

200

250

300

350

400

0 5 10 15 20 25 30

V

DS

(Volts)

Figure 8: Capacitance Characteristics

Capacitance (pF)

C

iss

C

oss

C

rss

V

DS

=15V

I

D

=5A

1

10

100

1000

10000

0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 11: Single Pulse Power Rating Junction-to-

Ambient (Note F)

Power (W)

T

A

=25°C

0.0

0.1

1.0

10.0

100.0

0.01 0.1 1 10 100

V

DS

(Volts)

I

D

(Amps)

Figure 10: Maximum Forward Biased Safe

Operating Area (Note F)

10

µ

s

10s

1ms

DC

R

DS(ON)

limited

T

J(Max)

=150°C

T

A

=25°C

100

µ

s

10ms

0.001

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

Z

θ

θ

θ

θJA

Normalized Transient

Thermal Resistance

D=T

on

/T

T

J,PK

=T

A

+P

DM

.Z

θJA

.R

θJA

T

on

T

P

D

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R

θJA

=125°C/W

Single Pulse

Rev 10: February 2011 www.aosmd.com Page 4 of 5

AO3404

-

+

VDC

Ig

Vds

DUT

-

+

VDC

Vgs

Vgs

10V

Qg

Qgs Qgd

Charge

Gate Charge Test Circuit & Waveform

-

+

VDC

DUT Vdd

Vgs

Vds

Vgs

RL

Rg

Vgs

Vds

10%

90%

Resistive Switching Test Circuit & Waveforms

t t

r

d(on)

t

on

t

d(off)

t

f

t

off

Vdd

Vgs

Id

Vgs

Rg

DUT

-

+

VDC

L

Vgs

Vds

Id

Vgs

BV

I

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Ig

Vgs

-

+

VDC

DUT

L

Vds

Vgs

Vds

Isd

Isd

Diode Recovery Test Circuit & Waveforms

Vds -

Vds +

I

F

AR

DSS

2

E = 1/2 LI

dI/dt

I

RM

rr

Vdd

Vdd

Q = - Idt

AR

AR

t

rr

Rev 10: February 2011 www.aosmd.com Page 5 of 5

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