AON7410 Datasheet. Www.s Manuals.com. R12 Ao
User Manual: Marking of electronic components, SMD Codes 74, 7403, 7408, 7410, 74s. Datasheets AON7403L, AON7408, AON7410, BAS70-04, DTA114WE, DTA114WKA, DTA114WUA, Si7403DN.
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AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. VDS (V) = 30V ID = 24A RDS(ON) < 20mΩ RDS(ON) < 26mΩ RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View (VGS = 10V) (VGS = 10V) (VGS = 4.5V) D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Orderable Part Number Package Type Form Minimum Order Quantity AON7410 DFN 3x3 EP Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Maximum 30 Units V Gate-Source Voltage VGS ±20 V ID 15 TC=25°C Continuous Drain Current B TC=100°C Pulsed Drain Current C 24 IDM Continuous Drain A Current TA=70°C A 50 TA=25°C 9.5 IDSM 7.7 Avalanche Current C IAS, IAR 17 A Repetitive avalanche energy L=0.1mH C EAS, EAR 14 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case Rev.12.0: August 2014 B 20 PD 8.3 PDSM 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 3.1 RθJA RθJC www.aosmd.com Typ 30 60 5 °C Max 40 75 6 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 50 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current TJ=55°C 5 ±100 VGS=10V, ID=8A Reverse Transfer Capacitance Rg Gate resistance 20 VGS=4.5V, ID=7A 21 26 VDS=5V, ID=8A 30 IS=1A,VGS=0V 0.75 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime VGS=10V, VDS=15V, ID=8A nA V mΩ S 1 V 20 A 440 550 660 pF 77 110 143 pF 33 55 77 pF 3 4 4.9 Ω 7.8 9.8 12 nC 3.6 4.6 5.5 nC 1.4 1.8 2.2 nC 1.3 2.2 3 nC 5 VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=8A, dI/dt=500A/µs 7 9 11 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 12 15 18 Body Diode Reverse Recovery Time µA A 29 SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge 2.5 16 DYNAMIC PARAMETERS Input Capacitance Ciss Crss 1.8 24 TJ=125°C Units V 1 Zero Gate Voltage Drain Current Output Capacitance Max 30 VDS=30V, VGS=0V IDSS Coss Typ 3.2 ns 24 ns 6 ns ns nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. 150 E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev12: Jul-2011 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.12.0: August 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V VDS= 5V 4.5V 4V 40 40 30 ID(A) ID (A) 30 3.5V 20 20 125°C 10 10 VGS= 3V 25°C 0 0 0 1 2 3 4 5 1 26 4 5 Normalized On-Resistance 1.8 24 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics VGS= 4.5V 22 20 18 VGS= 10V 16 14 0 5 10 15 VGS= 10V ID= 8A 1.6 1.4 VGS= 4.5V ID= 7A 1.2 1.0 0.8 IF=-6.5A, dI/dt=100A/µs 20 25 30 µ 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 50 ID= 8A 45 1E+01 40 1E+00 35 1E-01 30 IS (A) RDS(ON) (mΩ) 2 125°C 25 1E-02 125°C 1E-03 20 25°C 1E-04 15 25°C 1E-05 10 2 4 6 8 10 1E-06 0.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.12.0: August 2014 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS= 15V ID= 8A Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 200 Coss 2 Crss 0 0 0 2 4 6 8 0 10 5 10 15 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 300 100 TJ(Max)=150°C TC=25°C 10µs 10 100µs Power (W) ID (Amps) 20 1ms DC 1 RDS(ON) limited 200 100 0.1 TJ(Max)=150°C TA=25°C 0 0.00001 0.0001 0.001 0.01 0.1 1 10 100 VDS (Volts) 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note H) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 0.01 Ton 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Rev.12.0: August 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 Current rating ID(A) Power Dissipation (W) 25 15 10 5 0 20 10 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 1000 TA=25°C Power (W) 100 10 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA D=Ton/T RθJA=75°C/W TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 0.01 Single Pulse Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance(Note H) Rev.12.0: August 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.12.0: August 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6 www.s-manuals.com
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