AP2301GN HF 3 Datasheet. Www.s Manuals.com. Apec

User Manual: Marking of electronic components, SMD Codes N1, N1**, N1***, N1-, N10A, N10B, N10C, N10D, N10E, N10F, N10G, N10H, N10I, N10J, N10K, N10L, N10M, N10N, N10O, N10P, N10Q, N10R, N10S, N10T, N10U, N10V, N10W, N10X, N10Y, N10Z, N12, N16, N19, N1W, N1p, N1t. Datasheets 1KSMB10CA, 1KSMB11CA, 1KSMB12CA, 1KSMB13CA, 1KSMB15CA, 1KSMB16CA, 1KSMB18CA, 1KSMB20CA, 1KSMB22CA, 1KSMB24CA, 1KSMB27CA, 1KSMB30CA, 1KSMB33CA, 1KSMB36CA, 1KSMB39CA, 1KSMB43CA, 1KSMB47CA, 1KSMB51CA, 1KSMB56CA, 1KSMB6.8CA, 1KSMB62CA, 1KSMB68CA, 1KSMB7

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Advanced Power

Electronics Corp.

1/5

AP2301GN-HF-3

P-channel Enhancement-mode Power MOSFET

DSS

DS(ON)

D

Description

Absolute Maximum Ratings

Symbol Units

VDS

VGS

ID A

IDM

D at TA=25°C

TSTG

J

Symbol Value Unit

Parameter Rating

Gate-Source Voltage +

Continuous Drain Current3

Pulsed Drain Current1

Thermal Data

Parameter

Storage Temperature Range

A

dvanced Power MOSFETs from APEC provide the designer with the best

combination of fast switching, low on-resistance and cost-effectiveness.

The AP2301GN-HF-3 is in the popular SOT-23 small surface-mount package

BV -20V

Simple Drive Requirement

Lower On-resistance

Drain-Source Voltage -20 V

12 V

Rthj-a Maximum Thermal Resistance, Junction-ambient

which is widely used in commercial and industrial applications where a small

board footprint is required.

This device is well suited for use in medium current applications such as

load switches and DC-DC converters.

Ordering Information

D A

I Continuous Drain Current 3

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RoHS-compliant, halogen-free I -2.6A

at T =25°C -2.6 A

at T = 70°C -2.1 A

-10 A

P Total Power Dissipation 1.38 W

-55 to 150 °C

T Operating Junction Temperature Range -55 to 150 °C

90 °C/W

©2010 Advanced Power Electronics Corp. USA 200902046-3

Surface Mount Device R 130mΩ

D

G

S

SOT-23

AP2301GN-HF-3TR RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/ reel

G

D

S

Linear Derating Factor 0.01 W/°C

Advanced Power

Electronics Corp.

2/5

AP2301GN-HF-3

©2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

Electrical Specifications

at Tj=25°C (unless otherwise specified)

Source-Drain Diode

Notes:

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

1. Pulse width limited by maximum junction temperature.

RELIABILITY, FUNCTION OR DESIGN.

copper pad of FR4 board; 270°C/W when mounted on minimum copper pad.

2

2. Pulse test - pulse width < 300µs , duty cycle < 2%

3. Surface mounted on 1in

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V

RDS(ON) Static Drain-Source On-Resistance2VGS=-5V, ID=-2.8A - - 130 mΩ

VGS=-2.8V, ID=-2.0A - - 190 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1.25 V

gfs Forward Transconductance VDS=-5V, ID=-2A - 4 - S

IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA

Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V - - -10 uA

IGSS

Gate-Source Leakage VGS=±12V, VDS=0V - - ±100

nA

QgTotal Gate Charge2ID=-2A - 5 9 nC

Qgs Gate-Source Charge VDS=-16V - 1 - nC

Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC

td(on) Turn-on Delay Time2VDS=-10V - 6 - ns

tr

Rise Time ID=-1A - 17 -

ns

td(off)

Turn-off Delay Time RG=3.3Ω, VGS=-10V - 16 -

ns

tf

Fall Time RD=10Ω -5-ns

Ciss

Input Capacitance VGS=0V - 270 -

pF

Coss Output Capacitance VDS=-20V - 70 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF

Rg

Gate Resistance f=1.0MHz - 10 15

Ω

Symbol Parameter Test Conditions Min. Typ. Max. Units

ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A

ISM Pulsed Source Current ( Body Diode )1- - -10 A

VSD

Forward On Voltage2

Tj=25°C, IS=-1.6A, VGS=0V - - -1.2 V

Advanced Power

Electronics Corp.

3/5

AP2301GN-HF-3

©2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

vs. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

Typical Electrical Characteristics

Gate Voltage

Fig 3. On-Resistance vs. Fig 4. Normalized On-Resistance

0

2

4

6

8

10

0123456

-VDS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TA=25 oCVGS = -5V

VGS = -4V

VGS = -3V

VGS = -2V

0

2

4

6

8

10

0123456

-VDS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TA=150 oCVGS = -5V

VGS = -4V

VGS = -3V

VGS = -2V

80

120

160

200

240

0246810

-VGS , Gate-to-Source Voltage (V)

RDS(ON) (Ω)

ID= -2A

TA

=25°C

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

ID= -2.8A

VGS = -5V

0

1

10

0.1 0.3 0.5 0.7 0.9 1.1 1.3

-VSD , Source-to-Drain Voltage (V)

-IS(A)

Tj=25 oCT j=150 oC

0.0

0.5

1.0

1.5

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized -VGS(th) (V)

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Electronics Corp.

4/5

AP2301GN-HF-3

©2010 Advanced Power Electronics Corp. USA

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Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

Typical Electrical Characteristics (cont.)

td(on) tr

td(off)

tf

VDS

VGS

10%

90%

Q

VG

-4.5V

QGS

QGD

QG

Charge

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t , Pulse Width (s)

Normalized Thermal Response (Rthja)

0.01

0.05

0.1

0.2

Duty factor=0.5

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja = 270°C/W

t

T

Single Pulse

0

1

2

3

4

5

0123456

QG , Total Gate Charge (nC)

-VGS , Gate to Source Voltage (V)

ID

= -2A

VDS

= -16V

10

100

1000

1

5

9

13

17

21

25

-V DS , Drain-to-Source Voltage (V)

C (pF)

f

=1.0MH

z

Ciss

Coss

Crss

0.01

0.1

1

10

100

0.1 1 10 100

-V DS , Drain-to-Source Voltage (V)

-ID (A)

1ms

10ms

100ms

1s

DC

TA

=25 °C

Single Pulse

Advanced Power

Electronics Corp.

5/5

AP2301GN-HF-3

©2010 Advanced Power Electronics Corp. USA

www.a-powerusa.com

Package Dimensions: SOT-23

Marking Information: SOT-23

N1XX

Product: N1 = AP2301GN-HF-3

Date/lot code

For details of how to convert this

to standard YYWW date code format,

please contact us directly.

Millimeters

MIN NOM MAX

A 1.00 1.15 1.30

A1 0.00 -- 0.10

A2 0.10 0.15 0.25

D1 0.30 0.40 0.50

e 1.70 2.00 2.30

D 2.70 2.90 3.10

E 2.40 2.65 3.00

E1 1.40 1.50 1.60

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.

SYMBOLS

D

E1 E

e

D1

A

A1

A2

3

1 2

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