AP40T03GS HF, AP40T03GP HF Datasheet. Www.s Manuals.com. 20150105 Apec

User Manual: Marking of electronic components, SMD Codes 40, 40-, 404NL, 406NL, 40T, 40T03GH, 40T03GJ, 40T03GP, 40T03GS, 40W, 40p, 40t. Datasheets AP40T03GH-HF, AP40T03GJ-HF, AP40T03GP, AP40T03GS, BAS40XY, BCR420U, PDTC143TE, SST404NL, SST406NL, TK71540AS.

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AP40T03GS/P-HF
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 30V
▼ Low Gate Charge RDS(ON) 25mΩ
▼ Fast Switching Characteristic ID28A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings@Tj=25
o
C(unless otherwise specified)
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a 40 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data and specifications subject to change without notice
Halogen-Free Product
Parameter Rating
Drain-Source Voltage 30
Gate-Source Voltage +25
Continuous Drain Current, VGS @ 10V 28
Continuous Drain Current, VGS @ 10V 24
Pulsed Drain Current195
-55 to 150
Linear Derating Factor 0.25
Storage Temperature Range
Total Power Dissipation 31.25
-55 to 150
201501055
Thermal Data
Parameter
1
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Operating Junction Temperature Range
G
D
S
GDSTO-263(S)
GDSTO-220(P)
A
P40T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited fo
r
high current application due to the low connection resistance. The
through-hole version (AP40T03GP) are available for low-profile
applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=18A - - 25 mΩ
VGS=4.5V, ID=14A - - 45 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 15 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS= +25V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=18A - 8.8 - nC
Qgs Gate-Source Charge VDS=20V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 - nC
td(on) Turn-on Delay Time2VDS=15V - 6 - ns
trRise Time ID=18A - 62 - ns
td(off) Turn-off Delay Time RG=3.3Ω-16-ns
tfFall Time VGS=10V - 4.4 - ns
Ciss Input Capacitance VGS=0V - 655 - pF
Coss Output Capacitance VDS=25V - 145 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 28 A
ISM Pulsed Source Current ( Body Diode )1--95
A
VSD Forward On Voltage2Tj=25℃, IS=28A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
3.Surface mounted on 1 in2 copper pad of FR4 board
AP40T03GS/P-HF
A
P40T03GS/P-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
25
50
75
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150 oC 10V
8 .0V
6 .0V
VG=4.0V
0
30
60
90
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25 oC 10V
8 .0V
6 .0V
VG=4.0V
0.2
0.8
1.4
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=18A
VG=10V
10
30
50
70
0 5 10 15
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I D=14A
T C=25
℃
0.1
1
10
100
0 0.4 0.8 1.2 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25 oC
Tj=150 oC
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
VGS(th) (V)
AP40T03GS/P-H
F
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0
1
10
100
1000
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
T C=25 oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
3
6
9
12
036912
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
I D=18A
VDS =10V
VDS =15V
V DS =20V
10
100
1000
1 8 15 22 29
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
AP40T03GS/P-HF
MARKING INFORMATION
TO-263
TO-220
5
Part Numbe
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
40T03GS
YWWSSS
Part Numbe
Package Code
meet Rohs requirement
for low voltage MOSFET only
40T03GP
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
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