BC846, BC847, BC848, BC849, BC850 Datasheet. Www.s Manuals.com. Fairchild

User Manual: Marking of electronic components, SMD Codes 8C, 8C**, 8CA, 8CB, 8CC. Datasheets BC848AMTF, BC848BMTF, BC848CMTF, HA178L56UA, MMBZ5228, MMBZ5228B, MUN5213, NJM78L05A, NJM78L05UA, SMZ2568.

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BC846- BC850

tm

NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
3

• Low Noise: BC849, BC850
• Complement to BC856 ... BC860

2
1

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings*
Symbol

Ta = 25°C unless otherwise noted

Parameter

Value

Units

VCBO

Collector-Base Voltage

: BC846
: BC847/850
: BC848/849

80
50
30

V
V
V

VCEO

Collector-Emitter Voltage : BC846
: BC847/850
: BC848/849

65
45
30

V
V
V

VEBO

Emitter-Base Voltage

6
5

V
V

IC

Collector Current (DC)

100

mA

PC

Collector Power Dissipation

310

mW

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-65 ~ 150

°C

: BC846/847
: BC848/849/850

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

15

nA

ICBO

Collector Cut-off Current

VCB=30V, IE=0

hFE

DC Current Gain

VCE=5V, IC=2mA

VCE (sat)

Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA

90
200

VBE (sat)

Collector-Base Saturation Voltage

IC=10mA, IB=0.5mA
IC=100mA, IB=5mA

700
900

VBE (on)

Base-Emitter On Voltage

VCE=5V, IC=2mA
VCE=5V, IC=10mA

fT

Current Gain Bandwidth Product

VCE=5V, IC=10mA,
f=100MHz

300

Cob

Output Capacitance

VCB=10V, IE=0, f=1MHz

3.5

Cib

Input Capacitance

VEB=0.5V, IC=0, f=1MHz

9

NF

Noise Figure
: BC846/847/848
: BC849/850

VCE= 5V, IC= 200µA
RG=2KΩ, f=1KHz

2
1.2

10
4

dB
dB

VCE= 5V, IC= 200µA
RG=2KΩ, f=30~15000Hz

1.4
1.4

4
3

dB
dB

: BC849
: BC850

110

580

800

660

250
600

mV
mV
mV
mV

700
720

mV
mV
MHz

6

pF
pF

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

©2006 Fairchild Semiconductor Corporation

BC846- BC850 Rev. B

1

www.fairchildsemi.com

BC846- BC850 NPN Epitaxial Silicon Transistor

August 2006

Classification

A

B

C

hFE

110 ~ 220

200 ~ 450

420 ~ 800

Ordering Information
Device(note1)

Device Marking

Package

Packing Method

Qty(pcs)

Pin Difinitions

BC846AMTF
BC846BMTF

8AA

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

8AB

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC846CMTF

8AC

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC847AMTF

8BA

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC847BMTF

8BB

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC847CMTF

8BC

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC848AMTF

8CA

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC848BMTF

8CB

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC848CMTF

8CC

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC849AMTF

8DA

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC849BMTF

8DB

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC849CMTF

8DC

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC850AMTF

8EA

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC850BMTF

8EB

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

BC850CMTF

8EC

SOT-23

Tape & Reel

3000

1.Base 2.Emitter 3.Collector

Note1 :

Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.

2
BC846- BC850 Rev. B

www.fairchildsemi.com

BC846- BC850 NPN Epitaxial Silicon Transistor

hFE Classification

10000

IB = 400µA
IB = 350µA

80

VCE = 5V

IB = 300µA

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

100

IB = 250µA

60

IB = 200µA
IB = 150µA

40

IB = 100µA
20

1000

100

IB = 50µA
10

0
0

4

8

12

16

1

20

10

Figure 1. Static Characteristic

Figure 2. DC current Gain

10000

100

IC = 10 IB

IC[mA], COLLECTOR CURRENT

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

VBE(sat)

1000

100

VCE(sat)

10
1

10

100

VCE = 2V

10

1

0.1
0.0

1000

0.2

IC[mA], COLLECTOR CURRENT

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

f=1MHz

10

1

0.1
10

100

1000

VCB[V], COLLECTOR-BASE VOLTAGE

0.8

1.0

1.2

1000

VCE=5V

100

10

1
0.1

1

10

100

IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance

Figure 6. Current Gain Bandwidth Product

3
BC846- BC850 Rev. B

0.6

Figure 4. Base-Emitter On Voltage

100

1

0.4

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage

Cob[pF], CAPACITANCE

100

www.fairchildsemi.com

BC846- BC850 NPN Epitaxial Silicon Transistor

Typical Performance Characteristics

BC846- BC850 NPN Epitaxial Silicon Transistor

Mechanical Dimensions

±0.10

±0.10

2.40

0.40 ±0.03

1.30

0.45~0.60

0.20 MIN

SOT-23

0.03~0.10
0.38 REF

0.40 ±0.03

+0.05

0.12 –0.023
0.96~1.14

0.97REF

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03
1.90 ±0.03

0.508REF

Dimensions in Millimeters

4
BC846- BC850 Rev. B

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be an exhaustive list of all such trademarks.

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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.

2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I20

5
BC846- BC850 Rev. B

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BC846- BC850 NPN Epitaxial Silicon Transistor

TRADEMARKS

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Subject                         : BC846, BC847, BC848, BC849, BC850 - Datasheet. www.s-manuals.com.
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