BFR193 Datasheet. Www.s Manuals.com. Infineon

User Manual: Marking of electronic components, SMD Codes RC, RC**, RC-, RCW, RCp, RCs, RCt, Rc. Datasheets BD53E45G, BFR193, BZB84-B43, RP130K141A, Si1539DL.

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BFR193

Aug-09-20011

NPN Silicon RF Transistor

For low noise, high-gain amplifiers up to 2 GHz

For linear broadband amplifiers

fT = 8 GHz

F = 1.3 dB at 900 MHz

1

2

3

VPS05161

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR193 RCs 1 = B 2 = E 3 = C SOT23

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCEO 12 V

Collector-emitter voltage VCES 20

Collector-base voltage VCBO 20

Emitter-base voltage VEBO 2

Collector current IC80 mA

Base current IB10

Total power dissipation

TS 69 °C 1)

Ptot 580 mW

Junction temperature Tj150 °C

Ambient temperature TA-65 ... 150

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Junction - soldering point2) RthJS 140 K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

BFR193

Aug-09-20012

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 12 - - V

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

ICES - - 100 µA

Collector-base cutoff current

VCB = 10 V, IE = 0

ICBO - - 100 nA

Emitter-base cutoff current

VEB = 1 V, IC = 0

IEBO - - 1 µA

DC current gain

IC = 30 mA, VCE = 8 V

hFE 50 100 200 -

BFR193

Aug-09-20013

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

IC = 50 mA, VCE = 8 V, f = 500 MHz

fT6 8 - GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb - 0.68 1 pF

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Cce - 0.24 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb - 1.8 -

Noise figure

IC = 10 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

F

-

-

1.3

2.1

-

-

dB

Power gain, maximum available 1)

IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

f = 1.8 GHz

Gma

-

-

14.5

9

-

-

Transducer gain

IC = 30 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

-

-

12.5

7

-

-

1Gma = |S21 / S12| (k-(k2-1)1/2)

BFR193

Aug-09-20014

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :

Transistor Chip Data

IS = 0.2738 fA

VAF = 24 V

NE = 1.935 -

VAR = 3.8742 V

NC = 0.94371 -

RBM = 1

CJE = 1.1824 fF

TF = 18.828 ps

ITF = 0.96893 mA

VJC = 1.1828 V

TR = 1.0037 ns

MJS = 0-

XTI = 3-

BF = 125 -

IKF = 0.26949 A

BR = 14.267 -

IKR = 0.037925 A

RB = 1.8368

RE = 0.76534

VJE = 0.70276 V

XTF = 0.69477 -

PTF = 0 deg

MJC = 0.30002 -

CJS = 0fF

XTB = 0-

FC = 0.72063 -

NF = 0.95341 -

ISE = 10.627 fA

NR = 1.4289 -

ISC = 0.037409 fA

IRB = 0.91763 mA

RC = 0.11938

MJE = 0.48654 -

VTF = 0.8 V

CJC = 935.03 fF

XCJC = 0.053563 -

VJS = 0.75 V

EG = 1.11 eV

TNOM 300 K

All parameters are ready to use, no scalling is necessary.

Extracted on behalf of Infineon Technologies AG by:

Institut für Mobil-und Satellitentechnik (IMST)

Package Equivalent Circuit:

LBI = 0.85 nH

LBO = 0.51 nH

LEI = 0.69 nH

LEO = 0.61 nH

LCI = 0nH

LCO = 0.43 nH

CBE = 73 fF

CCB = 84 fF

CCE = 165 fF

Valid up to 6GHz

For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales

office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

BFR193

Aug-09-20015

Total power dissipation Ptot = f (TS)

0 20 40 60 80 100 120 °C 150

TS

0

100

200

300

400

mW

600

P

tot

Permissible Pulse Load RthJS = f (tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

0

10

1

10

2

10

3

10

K/W

R

thJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

Ptotmax/PtotDC = f (tp)

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

0

10

1

10

2

10

3

10

-

P

totmax

/ P

totDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

BFR193

Aug-09-20016

Collector-base capacitance Ccb = f (VCB)

f = 1MHz

0 4 8 12 16 V22

VCB

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

pF

1.3

C

cb

Transition frequency fT = f (IC)

VCE = Parameter

0 10 20 30 40 50 60 70 mA 85

IC

0

1

2

3

4

5

6

7

GHz

9

f

T

8V5V

3V

2V

1V

0.7V

Power Gain Gma, Gms = f(IC)

f = 0.9GHz

VCE = Parameter

0 10 20 30 40 50 60 70 mA 85

IC

6

8

10

12

dB

16

G

8V

3V

2V

1V

0.7V

Power Gain Gma, Gms = f(IC)

f = 1.8GHz

VCE = Parameter

0 10 20 30 40 50 60 70 mA 85

IC

2

3

4

5

6

7

8

dB

10

G

8V

3V

2V

1V

0.7V

BFR193

Aug-09-20017

Intermodulation Intercept Point IP3=f(IC)

(3rd order, Output, ZS=ZL=50 )

VCE = Parameter, f = 900MHz

0 10 20 30 40 50 60 70 80 mA 100

IC

12

14

16

18

20

22

24

26

28

30

32

34

dBm38

IP

3

8V

5V

3V

2V

1V

Power Gain Gma, Gms = f(VCE):_____

|S21|2 = f(VCE):---------

f = Parameter

012345678V10

VCE

2

4

6

8

10

12

dB

16

G

0.9GHz

1.8GHz

0.9GHz

1.8GHz

IC=30mA

Power Gain |S21|2= f(f)

VCE = Parameter

0 0.5 1 1.5 2 2.5 GHz 3.5

f

-2

2

6

10

14

18

22

dB

30

S

21

10V

1V

0.7V

IC=30mA

Power Gain Gma, Gms = f(f)

VCE = Parameter

0 0.5 1 1.5 2 2.5 GHz 3.5

f

0

4

8

12

16

20

24

dB

32

G

10V

1V

0.7V

IC=30mA

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