BSS123 Datasheet. Www.s Manuals.com. Philips
User Manual: Marking of electronic components, SMD Codes SA, SA***, SA-, SAG, SAH, SAW, SAp, SAt, sa**. Datasheets AP65201WU-7, BSS123, BSS123N3, BZX84J-B12, KTC4377, PT7M6102CHC4E, PT7M6102CHNE, PT7M6102CHTAE, RP130K341A, TLV70013DDCR, TS391AG-AF5, TS391AG-AL5.
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Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES BSS123 SYMBOL • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package QUICK REFERENCE DATA d VDSS = 100 V ID = 150 mA g RDS(ON) ≤ 6 Ω (VGS = 10 V) s GENERAL DESCRIPTION PINNING N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:• Relay driver • High-speed line driver • Telephone ringer PIN SOT23 DESCRIPTION 1 gate 2 source 3 drain 3 Top view 1 2 The BSS123 is supplied in the SOT23 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS VDGR VGS ID IDM PD Tj, Tstg Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 55 100 100 ± 20 150 600 0.25 150 V V V mA mA W ˚C CONDITIONS TYP. MAX. UNIT surface mounted on FR4 board 500 - K/W Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature Ta = 25 ˚C Ta = 25 ˚C Ta = 25 ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-a Thermal resistance junction to ambient August 2000 1 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET BSS123 ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance CONDITIONS MIN. TYP. MAX. UNIT VGS = 0 V; ID = 10 µA 100 130 - V VDS = VGS; ID = 1 mA VGS = 10 V; ID = 120 mA 1 - 2 3.5 2.8 6 V Ω VDS = 25 V; ID = 120 mA - 350 - mS - 10 100 nA - 10 100 nA - 3 10 ns - 12 20 ns - 23 6 4 40 25 10 pF pF pF gfs Forward transconductance IDSS IGSS Zero gate voltage drain VDS = 60 V; VGS = 0 V current Gate source leakage current VGS = ±20 V; VDS = 0 V ton Turn-on time toff Turn-off time Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance August 2000 VDD = 50 V; RD = 250 Ω; VGS = 10 V; RG = 50 Ω; Resistive load VGS = 0 V; VDS = 25 V; f = 1 MHz 2 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET BSS123 MECHANICAL DATA Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mm 1.1 0.9 OUTLINE VERSION A1 max. bp c D E 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 e 1.9 e1 HE Lp Q v w 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 SOT23 Fig.1. SOT23 surface mounting package. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". August 2000 3 Rev 1.000 Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET BSS123 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 2000 4 Rev 1.000 www.s-manuals.com
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