BSS84L, BVSS84L Datasheet. Www.s Manuals.com. R8 On

User Manual: Marking of electronic components, SMD Codes PD, PD *, PD**, PD-, PDAI, PDBI, PDCI, PDW, PDp, PDt, Pd. Datasheets BD52E56G, BSS84, BSS84L, BSS84N3, BVSS84L, BZB84-C22, MTP3J15N3, RP130Q431D, Si1926DL, TPS3809I50DBV, TPS3809K33DBV, TPS3809L30DBV.

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© Semiconductor Components Industries, LLC, 2012
October, 2012 Rev. 8
1Publication Order Number:
BSS84LT1/D
BSS84L, BVSS84L
Power MOSFET
Single P-Channel SOT-23
-50 V, 10 W
SOT23 Surface Mount Package Saves Board Space
AEC Q101 Qualified and PPAP Capable BVSS84L
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
DraintoSource Voltage VDSS 50 Vdc
GatetoSource Voltage Continuous VGS ±20 Vdc
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
ID
IDM
130
520
mA
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature
Range
TJ, Tstg 55 to
150
°C
Thermal Resistance JunctiontoAmbient RqJA 556 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
1
2
PChannel
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SOT23
CASE 318
STYLE 21
PD MG
G
MARKING DIAGRAM & PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
Device Package Shipping
ORDERING INFORMATION
BSS84LT1G SOT23
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BVSS84LT1G SOT23
(PbFree)
3000 / Tape & Reel
PD = Specific Device Code
M = Date Code
G= PbFree Package
(*Note: Microdot may be in either location)
50 V 10 W @ 10 V
V(BR)DSS RDS(ON) MAX
BSS84L, BVSS84L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS 50 Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.1
15
60
mAdc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS ±10 nAdc
ON CHARACTERISTICS (Note 1)
GateSource Threaded Voltage (VDS = VGS, ID = 250 mA) VGS(th) 0.9 − −2.0 Vdc
Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 100 mAdc) RDS(on) 4.7 10 W
Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) |yfs| 50 mS
DYNAMIC CHARACTERISTICS
Input Capacitance VDS = 5.0 Vdc Ciss 36 pF
Output Capacitance VDS = 5.0 Vdc Coss 17
Transfer Capacitance VDG = 5.0 Vdc Crss 6.5
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
VDD = 15 Vdc, ID = 2.5 Adc,
RL = 50 W
td(on) 3.6 ns
Rise Time tr9.7
TurnOff Delay Time td(off) 12
Fall Time tf1.7
Gate Charge VDD = 40 Vdc, ID = 0.5 A,
VGS = 10 V
QT2.2 nC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current IS − −0.130 A
Pulsed Current ISM − −0.520
Forward Voltage (Note 2) VGS = 0 V, IS = 130 mA VSD − −2.2 V
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.3
0.4
0.1
0.6
0.2
Figure 1. Transfer Characteristics
1 1.5 2 2.5 3
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. OnRegion Characteristics
VDS = 10 V
150°C
25°C
-55°C
024 10
0
0.15
0.2
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
6
0.05
8
0.3
0.1
3.5
0.5
0.25
13 957
-3.25 V
-2.75 V
-2.25 V
-2.5 V
-3.0 V
VGS = -3.5 V
4
0.35
0.4
0.5
0.45 TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
BSS84L, BVSS84L
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3
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS
Figure 3. OnResistance versus Drain Current
0 0.2 0.4 0.6
2
5
6
Figure 4. OnResistance versus Drain Current
-ID, DRAIN CURRENT (AMPS)
Figure 5. OnResistance Variation with Temperature
1
0.001
0.1
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Charge
-VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
25°C
VGS = -4.5 V
VGS = -10 V
ID = -0.52 A
-55 -5 45 95 145
TJ = 150°C
4
0.6
0.8
0 0.5 1.0 1.5
3
0.01
-55°C25°C
2.0
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS
0 0.2 0.4 0.6
2
5
6
-ID, DRAIN CURRENT (AMPS)
VGS = -10 V
4
3
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
-6
-2
0
QT, TOTAL GATE CHARGE (pC)
-8
-4
500
VDS = -40 V
TJ = 25°C
1000
ID = -0.5 A
1500
0.1 0.3 0.5
150°C
-55°C
7
4.5
5.5
3.5
2.5
6.5
0.1 0.3 0.5
1.2
2
1.4
1.6
1.8
VGS = -4.5 V
ID = -0.13 A
2000
2.5 3.0
150°C
25°C
-55°C
8
9
7
-5
-1
-7
-3
ID, DRAIN CURRENT (AMPS)
BSS84L, BVSS84L
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4
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
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