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User Manual: Marking of electronic components, SMD Codes PD, PD *, PD**, PD-, PDAI, PDBI, PDCI, PDW, PDp, PDt, Pd. Datasheets BD52E56G, BSS84, BSS84L, BSS84N3, BVSS84L, BZB84-C22, MTP3J15N3, RP130Q431D, Si1926DL, TPS3809I50DBV, TPS3809K33DBV, TPS3809L30DBV.

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© Semiconductor Components Industries, LLC, 2012

October, 2012 − Rev. 8

1Publication Order Number:

BSS84LT1/D

BSS84L, BVSS84L

Power MOSFET

Single P-Channel SOT-23

-50 V, 10 W

•SOT−23 Surface Mount Package Saves Board Space

•AEC Q101 Qualified and PPAP Capable − BVSS84L

•These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage VDSS 50 Vdc

Gate−to−Source Voltage − Continuous VGS ±20 Vdc

Drain Current

Continuous @ TA = 25°C

Pulsed Drain Current (tp ≤ 10 ms)

ID

IDM

130

520

mA

Total Power Dissipation @ TA = 25°C PD225 mW

Operating and Storage Temperature

Range

TJ, Tstg −55 to

150

°C

Thermal Resistance − Junction−to−Ambient RqJA 556 °C/W

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

3

1

2

P−Channel

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SOT−23

CASE 318

STYLE 21

PD MG

G

MARKING DIAGRAM & PIN ASSIGNMENT

3

21

Drain

Gate

2

1

3

Source

Device Package Shipping†

ORDERING INFORMATION

BSS84LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BVSS84LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

PD = Specific Device Code

M = Date Code

G= Pb−Free Package

(*Note: Microdot may be in either location)

−50 V 10 W @ 10 V

V(BR)DSS RDS(ON) MAX

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2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = −250 mAdc)

V(BR)DSS −50 − − Vdc

Zero Gate Voltage Drain Current

(VDS = −25 Vdc, VGS = 0 Vdc)

(VDS = −50 Vdc, VGS = 0 Vdc)

(VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS −

−

−

−

−

−

−0.1

−15

−60

mAdc

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±10 nAdc

ON CHARACTERISTICS (Note 1)

Gate−Source Threaded Voltage (VDS = VGS, ID = −250 mA) VGS(th) −0.9 − −2.0 Vdc

Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc) RDS(on) −4.7 10 W

Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz) |yfs| 50 − − mS

DYNAMIC CHARACTERISTICS

Input Capacitance VDS = 5.0 Vdc Ciss −36 −pF

Output Capacitance VDS = 5.0 Vdc Coss −17 −

Transfer Capacitance VDG = 5.0 Vdc Crss −6.5 −

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

VDD = −15 Vdc, ID = −2.5 Adc,

RL = 50 W

td(on) −3.6 −ns

Rise Time tr−9.7 −

Turn−Off Delay Time td(off) −12 −

Fall Time tf−1.7 −

Gate Charge VDD = −40 Vdc, ID = −0.5 A,

VGS = −10 V

QT−2.2 −nC

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current IS− − −0.130 A

Pulsed Current ISM − − −0.520

Forward Voltage (Note 2) VGS = 0 V, IS = −130 mA VSD − − −2.2 V

1. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

TYPICAL ELECTRICAL CHARACTERISTICS

0

0.3

0.4

0.1

0.6

0.2

Figure 1. Transfer Characteristics

1 1.5 2 2.5 3

-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. On−Region Characteristics

VDS = 10 V

150°C

25°C

-55°C

024 10

0

0.15

0.2

-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

6

0.05

8

0.3

0.1

3.5

0.5

0.25

13 957

-3.25 V

-2.75 V

-2.25 V

-2.5 V

-3.0 V

VGS = -3.5 V

4

0.35

0.4

0.5

0.45 TJ = 25°C

−ID, DRAIN CURRENT (AMPS)

−ID, DRAIN CURRENT (AMPS)

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3

TYPICAL ELECTRICAL CHARACTERISTICS

RDS(on), DRAIN-TO-SOURCE RESISTANCE

(NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS

Figure 3. On−Resistance versus Drain Current

0 0.2 0.4 0.6

2

5

6

Figure 4. On−Resistance versus Drain Current

-ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance Variation with Temperature

1

0.001

0.1

1

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Gate Charge

-VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 7. Body Diode Forward Voltage

25°C

VGS = -4.5 V

VGS = -10 V

ID = -0.52 A

-55 -5 45 95 145

TJ = 150°C

4

0.6

0.8

0 0.5 1.0 1.5

3

0.01

-55°C25°C

2.0

RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS

0 0.2 0.4 0.6

2

5

6

-ID, DRAIN CURRENT (AMPS)

VGS = -10 V

4

3

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

0

-6

-2

0

QT, TOTAL GATE CHARGE (pC)

-8

-4

500

VDS = -40 V

TJ = 25°C

1000

ID = -0.5 A

1500

0.1 0.3 0.5

150°C

-55°C

7

4.5

5.5

3.5

2.5

6.5

0.1 0.3 0.5

1.2

2

1.4

1.6

1.8

VGS = -4.5 V

ID = -0.13 A

2000

2.5 3.0

150°C

25°C

-55°C

8

9

7

-5

-1

-7

-3

ID, DRAIN CURRENT (AMPS)

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4

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

D

A1

3

12

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

VIEW C

L

0.25

L1

q

e

EE

b

A

SEE VIEW C

DIM

A

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

L1

H

2.10 2.40 2.64 0.083 0.094 0.104

HE

0.35 0.54 0.69 0.014 0.021 0.029

c

0−−− 10 0 −−− 10

q°°°°

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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