EML4, UML4N Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes L4, L4 *, L4***, L4-, L4-***, L42, L43, L44, L4B, L4P, L4W, L4p, L4t. Datasheets 2SC1623, 2SC1623W, ADP3330ART-3, BAT54, BAT54A, BAT54C, BAT54S, BAT54W, BZX384-B7V5, EML4, NL17SZ32DFT2, NL17SZ32XV5T2, RT9819E-26PV, SST504, Si2304BDS, UML4N.

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EML4 / UML4N

Transistors

Rev.C 1/4

General purpose transistor

(isolated transistor and diode)

EML4 / UML4N

2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package.

zApplications

DC / DC converter

Motor driver

zFeatures

1) Tr : Low VCE(sat)

Di : Low VF

2) Small package

zStructure

PNP Silicon epitaxial planar transistor

Schottky barrier diode

The following characteristics apply to both Di1 and Tr2.

zEquivalent circuit

Tr2Di1

(1) (2) (3)

(4)(5)

zPackaging specifications

Type EML4

EMT5

L4

T2R

8000

UML4N

UMT5

L4

TR

3000

Package

Marking

Code

Basic ordering unit(pieces)

zDimensions (Unit : mm)

Each lead has same dimensions

Each lead has same dimensions

ROHM : EMT5

UMT5

EMT5

Abbreviated symbol : L4

ROHM : UMT5

EIAJ : SC-88A

Abbreviated symbol : L4

0.9

0.15

0.1Min.

0.7

2.1

1.3

0.65

2.0

0.2

1.25

0.65

(4)

(1)

(5)

(2)(3)

1pin mark

0.22

1.2

1.6

(1)(2)(3)

(5)(4)

0.13

0.5

0.5

0.5

1.0

1.6

1pin mark

EML4 / UML4N

Transistors

Rev.C 2/4

zAbsolute maximum ratings (Ta=25°C)

Di1

Parameter Symbol

I

O

I

FSM

V

R

Tj

Limits

200

1

30

125

Unit

mA

A

V

°C

Average rectified forward current

F

orward current surge peak (60H

Z

, 1∞)

Reverse voltage (DC)

Junction temperature

Tr2

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

Pd

Tj

Limits

−15

−12

−6

−500

120

150

−1

∗

Unit

V

V

V

mA

A

mW

°C

∗ Each terminal mounted on a recommended.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Di1 / DTr2

Parameter Symbol

Pd

Tstg

Limits

150

−55 to +125

Unit

mW ∗

∗ Each terminal mounted on a recommended.

°C

Power dissipation

Storage temperature

zElectrical characteristics (Ta=25°C)

Di1

Parameter Symbol Min. Typ. Max. Unit Conditions

−0.50V

F

0.40 V I

F

=200mA

V

R

=10V

Forward voltage

I

R

−4.0 30 µA

Reverse current

Tr2

Parameter Symbol Min. Typ. Max. Unit Conditions

V

CB

=−10V, I

E

=0mA, f=1MHz

f

T

−260 −MHz V

CE

=−2V, I

E

=10mA, f=100MHz

BV

CEO

−12 −−

VI

C

=−1mA

BV

CBO

−15 −−

VI

C

=−10µA

BV

EBO

−6−−

VI

E

=−10µA

I

CBO

−−

−100 nA V

CB

=−15V

I

EBO

−−

−100 nA V

EB

=−6V

V

CE(sat)

−−100 −250 mV I

C

=−200mA, I

B

=−10mA

h

FE

270 −680 −V

CE

=−2V, I

C

=−10mA

Cob −6.5 −pF

Transition frequency

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Collector output capacitance

EML4 / UML4N

Transistors

Rev.C 2/4

FORWARDVOLTAGE：VF(mV)

VF-IFCHARACTERISTICS

FORWARDCURRENT:IF(mA)

0.001

0.01

0.1

1

10

100

1000

0 100 200 300 400 500

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

zElectrical characteristic curves

Di1

Tr2

0

1

100

1000

10

BASE TO EMITTER VOLTAGE : V

BE

(V)

COLLECTOR CURRENT : I

C

(mA)

1.41.0 1.20.4 0.6 0.80.2

V

CE

=2V

Pulsed

Ta=125°C

Ta=25°C

Ta= −40°C

Fig.3 Grounded emitter propagation

characteristics

1 10 100 1000

COLLECTOR CURRENT : IC (mA)

1

DC CURRENT GAIN : hFE

10

1000

100

Ta=125°C

Ta=−40°C

Ta=25°C

V

CE

=2V

Pulsed

Fig.4 DC current gain vs.

collector current

1 10 100 1000

COLLECTOR CURRENT : I

C

(mA)

1

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(mV)

10

1000

100

Ta=25°C

Pulsed

I

C

/I

B

=50

I

C

/I

B

=20

I

C

/I

B

=10

Fig.5

Collector-emitter saturation voltage

vs. collector current ( Ι )

1 10 100 1000

COLLECTOR CURRENT : I

C

(mA)

1

COLLECTOR SATURATION VOLTAGE : V

CE (sat)

(mV)

10

1000

100

Ta=25°C

Ta=−40°C

Ta=125°C

I

C

/I

B

=20

Pulsed

Fig.6 Collector-emitter saturation voltage

vs. collector current ( ΙΙ )

1 10 100 1000

COLLECTOR CURRENT : I

C

(mA)

10

BASER SATURATION VOLTAGE : V

BE (sat)

(mV)

100

10000

1000

Ta=25°CTa=−40°C

Ta=125°C

I

C

/I

B

=20

Pulsed

Fig.7

Base-emitter saturation voltage

vs. collector current

1 10 100 1000

EMITTER CURRENT : I

E

(mA)

1

TRANSITION FREQUENCY : f

T

(MHz)

10

1000

100

V

CE

=2V

Ta=25°C

Pulsed

Fig.8

Gain bandwidth product

vs. emitter current

0.01

0.1

1

10

100

1000

10000

100000

0102030

Ta=125℃

Ta=75℃

Ta=25℃

Ta=-25℃

REVERSECURRENT:IR(uA)

REVERSEVOLTAGE：VR(V)

VR-IRCHARACTERISTICS

CAPACITANCEBETWEEN

TERMINALS:Ct(pF)

REVERSEVOLTAGE:VR(V)

VR-CtCHARACTERISTICS

1

10

100

0 5 10 15 20

f=1MHz

EML4 / UML4N

Transistors

Rev.C 3/4

1 10 1000.1

1

10

100

1000

Ta

=

25°C

f

=

1MHz

I

E

=

0A

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : V

EB

(

V)

Cib

Cob

Fig.9

Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

0.01 0.1 1 10 100

EMITTER CURRENT : V

CE

(V)

0.001

TRANSITION FREQUENCY : I

C

(A)

0.01

10

0.1

1

Ta=25°C

Single Pulsed

DC 100ms

10ms 1ms

Fig.10 Safe operation area

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

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Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

Appendix1-Rev2.0

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(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

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Appendix

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