FMMT2222, FMMT2222A, FMMT2222AR, FMMT2222R Datasheet. Www.s Manuals.com. Zetex

User Manual: Marking of electronic components, SMD Codes 3P, 3PG, 3PL. Datasheets 2N7002, CMDZ22L, FMMT2222AR.

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FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER

SYMBOL

FMMT2222
MIN. MAX.
250

fT

FMMT2222A
MIN. MAX.
300

UNIT
MHz

Transition
Frequency
Output Capacitance

Cobo

8

8

pF

Input Capacitance

Cibo

30

25

pF

Delay Time
Rise Time

td
tr

10
25

10
25

ns
ns

Storage Time
Fall Time

FMMT2222
FMMT2222A

SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS

225
60

ts
tf

225
60

CONDITIONS.

IC=20mA, VCE=20V
f=100MHz
VCB=10V, IE=0,
f=140KHz
VEB=0.5V, IC=0
f=140KHz
VCC=30V, VBE(off)=0.5V
IC=150mA, IB1=15mA
(See Delay Test Circuit)
VCC=30V, IC=150mA
IB1= IB2=15mA
(See Storage Test
Circuit)

ns
ns

DELAY AND RISE  TEST CIRCUIT

200Ω

619Ω

Scope:
Rin > 100 kΩ
Cin < 12 pF
Rise Time < 5 ns

0.5V

STORAGE TIME AND FALL TIME  TEST CIRCUIT
+30V

=100µs
<5ns

200Ω

+16.2 V

0

1KΩ

Scope:
R > 100 kΩ
C < 12 pF
Rise Time < 5 ns
in

1N916

-13.8 V
=500µs

Duty cycle = 2%

B

ABSOLUTE MAXIMUM RATINGS.
PARAMETER

SYMBOL

FMMT2222

FMMT2222A

UNIT

Collector-Base Voltage

VCBO

60

75

V

Collector-Emitter Voltage

VCEO

30

40

V

Emitter-Base Voltage

VEBO

5

Continuous Collector Current

IC

600

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

-55 to +150

°C

6

V

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

Generator rise time <2ns
Pulse width (t1)<200ns
Duty cycle = 2%

0

E

C

Operating and Storage Temperature Range Tj:Tstg

+30V

9.9V

ISSUE 3  FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222
 1BZ
FMMT2222A  1P
FMMT2222R
 2P
FMMT2222AR  3P
COMPLEMENTARY TYPES
FMMT2222
 FMMT2907
FMMT2222A  FMMT2907A

in

-3V

PARAMETER

SYMBOL

Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current

V(BR)CBO

FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
60
75
V
IC=10µA, IE=0

V(BR)CEO

30

40

V

IC=10mA, IB=0

V(BR)EBO

5

6

V

IE=10µA, IC=0

nA

Emitter Cut-Off
Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio

10

ICBO

10

10

nA
µA
nA

VCB=50V, IE=0
VCB=60V, IE=0
VCB=50V, IE=0, Tamb=150°C
VCB=60V, IE=0, Tamb=150°C
VEB=3V, IC=0

µA

IEBO

10

10
10

ICEX

10

10

nA

VCE=60V, VEB(off)=3V

VCE(sat)

0.3
1.0
2.0
2.6

0.3
1.0
1.2
2.0

V
V
V
V

IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
IC=0.1mA, VCE=10V*
IC=1mA, VCE=10V
IC=10mA, VCE=10V*
IC=10mA, VCE=10V, Tamb=-55°C
IC=150mA, VCE=10V*
IC=150mA, VCE=1V*
IC=500mA, VCE=10V*

VBE(sat)

0.6

hFE

35
50
75
35
100
50
30

300

0.6
35
50
75
35
100
50
40

300

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device

FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER

SYMBOL

FMMT2222
MIN. MAX.
250

fT

FMMT2222A
MIN. MAX.
300

UNIT
MHz

Transition
Frequency
Output Capacitance

Cobo

8

8

pF

Input Capacitance

Cibo

30

25

pF

Delay Time
Rise Time

td
tr

10
25

10
25

ns
ns

Storage Time
Fall Time

FMMT2222
FMMT2222A

SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS

225
60

ts
tf

225
60

CONDITIONS.

IC=20mA, VCE=20V
f=100MHz
VCB=10V, IE=0,
f=140KHz
VEB=0.5V, IC=0
f=140KHz
VCC=30V, VBE(off)=0.5V
IC=150mA, IB1=15mA
(See Delay Test Circuit)
VCC=30V, IC=150mA
IB1= IB2=15mA
(See Storage Test
Circuit)

ns
ns

DELAY AND RISE  TEST CIRCUIT

200Ω

619Ω

Scope:
Rin > 100 kΩ
Cin < 12 pF
Rise Time < 5 ns

0.5V

STORAGE TIME AND FALL TIME  TEST CIRCUIT
+30V

=100µs
<5ns

200Ω

+16.2 V

0

1KΩ

Scope:
R > 100 kΩ
C < 12 pF
Rise Time < 5 ns
in

1N916

-13.8 V
=500µs

Duty cycle = 2%

B

ABSOLUTE MAXIMUM RATINGS.
PARAMETER

SYMBOL

FMMT2222

FMMT2222A

UNIT

Collector-Base Voltage

VCBO

60

75

V

Collector-Emitter Voltage

VCEO

30

40

V

Emitter-Base Voltage

VEBO

5

Continuous Collector Current

IC

600

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

-55 to +150

°C

6

V

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

Generator rise time <2ns
Pulse width (t1)<200ns
Duty cycle = 2%

0

E

C

Operating and Storage Temperature Range Tj:Tstg

+30V

9.9V

ISSUE 3  FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222
 1BZ
FMMT2222A  1P
FMMT2222R
 2P
FMMT2222AR  3P
COMPLEMENTARY TYPES
FMMT2222
 FMMT2907
FMMT2222A  FMMT2907A

in

-3V

PARAMETER

SYMBOL

Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current

V(BR)CBO

FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
60
75
V
IC=10µA, IE=0

V(BR)CEO

30

40

V

IC=10mA, IB=0

V(BR)EBO

5

6

V

IE=10µA, IC=0

nA

Emitter Cut-Off
Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio

10

ICBO

10

10

nA
µA
nA

VCB=50V, IE=0
VCB=60V, IE=0
VCB=50V, IE=0, Tamb=150°C
VCB=60V, IE=0, Tamb=150°C
VEB=3V, IC=0

µA

IEBO

10

10
10

ICEX

10

10

nA

VCE=60V, VEB(off)=3V

VCE(sat)

0.3
1.0
2.0
2.6

0.3
1.0
1.2
2.0

V
V
V
V

IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
IC=150mA, IB=15mA*
IC=500mA, IB=50mA*
IC=0.1mA, VCE=10V*
IC=1mA, VCE=10V
IC=10mA, VCE=10V*
IC=10mA, VCE=10V, Tamb=-55°C
IC=150mA, VCE=10V*
IC=150mA, VCE=1V*
IC=500mA, VCE=10V*

VBE(sat)

0.6

hFE

35
50
75
35
100
50
30

300

0.6
35
50
75
35
100
50
40

300

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device

www.s-manuals.com

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Title                           : FMMT2222, FMMT2222A, FMMT2222AR, FMMT2222R - Datasheet. www.s-manuals.com.
Subject                         : FMMT2222, FMMT2222A, FMMT2222AR, FMMT2222R - Datasheet. www.s-manuals.com.
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Keywords                        : FMMT2222, FMMT2222A, FMMT2222AR, FMMT2222R - Datasheet. www.s-manuals.com.
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