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SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 MARCH 1995
PARTMARKING DETAIL FMMTA20 1C
FMMTA20R 3C
COMPLEMENTARY TYPE FMMTA70
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 4V
Continuous Collector Current IC100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 40 V IC=1mA, IE=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 4VI
E=100mA, IC
=0
Collector Cut-Off
Current
ICBO 0.1 µAVCB
=30V, IE=0
Static Forward
Current Transfer Ratio
hFE 40 400 IC=5mA, VCE=10V*
Collector-Emitter
Saturation Voltage
VCE(sat) 0.25 V IC=10mA,IB
=1mA
Transition
Frequency
fT125 MHz IC=5mA, VCE=10V
f=100MHz
Output Capacitance Cobo 4pFV
CB
=10V, f=140kHz, IE=0
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FMMTA20
C
B
E
SOT23
