IRLML6402 Datasheet. Www.s Manuals.com. Irf

User Manual: Marking of electronic components, SMD Codes E*, E****. Datasheets BAT54, IRLML6402, IRLML6402PbF, NUP4103FC.

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Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient75 100 °C/W

IRLML6402

HEXFET® Power MOSFET

These P-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET®

power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in battery and

load management.

A thermally enhanced large pad leadframe has been incorporated

into the standard SOT-23 package to produce a HEXFET Power

MOSFET with the industry's smallest footprint. This package,

dubbed the Micro3™, is ideal for applications where printed

circuit board space is at a premium. The low profile (<1.1mm)

of the Micro3 allows it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

The thermal resistance and power dissipation are the best

available.

Thermal Resistance

VDSS = -20V

RDS(on) = 0.065Ω

lUltra Low On-Resistance

lP-Channel MOSFET

l SOT-23 Footprint

lLow Profile (<1.1mm)

lAvailable in Tape and Reel

lFast Switching

Description

12/14/11

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Parameter Max. Units

VDS Drain- Source Voltage -20 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7

ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A

IDM Pulsed Drain Current -22

PD @TA = 25°C Power Dissipation 1.3

PD @TA = 70°C Power Dissipation 0.8

Linear Derating Factor 0.01 W/°C

EAS Single Pulse Avalanche Energy11 mJ

VGS Gate-to-Source Voltage ± 12 V

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

W

Micro3™

S

G1

2

D3

PD - 93755D

IRLML6402

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Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V 

trr Reverse Recovery Time ––– 29 43 ns TJ = 25°C, IF = -1.0A

Qrr Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/μs 

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

Source-Drain Ratings and Characteristics

-1.3

-22

A

S

D

G

** For recommended footprint and soldering techniques refer to application note #AN-994.

 Surface mounted on 1" square single layer 1oz. copper FR4 board,

steady state.

 Starting TJ = 25°C, L = 1.65mH

RG = 25Ω, IAS = -3.7A.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA

ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA 

––– 0.050 0.065 VGS = -4.5V, ID = -3.7A 

––– 0.080 0.135 VGS = -2.5V, ID = -3.1A 

VGS(th) Gate Threshold Voltage -0.40 -0.55 -1.2 V VDS = VGS, ID = -250μA

gfs Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A 

––– ––– -1.0 VDS = -20V, VGS = 0V

––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

QgTotal Gate Charge ––– 8.0 12 ID = -3.7A

Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V

Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V 

td(on) Turn-On Delay Time ––– 350 ––– VDD = -10V

trRise Time ––– 48 ––– ID = -3.7A

td(off) Turn-Off Delay Time ––– 588 ––– RG = 89Ω

tfFall Time ––– 381 ––– RD = 2.7Ω

Ciss Input Capacitance ––– 633 ––– VGS = 0V

Coss Output Capacitance ––– 145 ––– pF VDS = -10V

Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

nA

ns

IRLML6402

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

0.1 1 10 100

20μs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

DS

D

-2.25V

1

10

100

0.1 1 10 100

20μs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

DS

D

-2.25V

10

100

2.0 3.0 4.0 5.0 6.0 7.0 8.0

V = -15V

20μs PULSE WIDTH

DS

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

GS

D

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

-4.5V

-3.7A

IRLML6402

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

1

10

100

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

T

= 150 C

= 25 C

°

°

J

C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

110 100

VDS, Drain-to-Source Voltage (V)

0

200

400

600

800

1000

C, Capacitance(pF)

Coss

Crss

Ciss

VGS

= 0V, f = 1 MHZ

Ciss

= C

gs

+ C

gd, C

ds

SHORTED

Crss

= C

gd

Coss

= C

ds

+ C

gd

036912

0

2

4

6

8

10

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

-3.7A

V =-10V

DS

0.1

1

10

100

0.2 0.4 0.6 0.8 1.0 1.2

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J°

T = 150 C

J°

IRLML6402

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

T , Case Temperature ( C)

-I , Drain Current (A)

°

C

D

25 50 75 100 125 150

0

5

10

15

20

25

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

ID

TOP

BOTTOM

-1.7A

-3.0A

-3.7A

0.1

1

10

100

1000

0.00001 0.0001 0.001 0.01 0.1 1 10

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRLML6402

6www.irf.com

Fig 13. Typical On-Resistance Vs.

Drain Current

Fig 12. Typical On-Resistance Vs.

Gate Voltage

2.0 3.0 4.0 5.0 6.0 7.0

-VGS, Gate -to -Source Voltage ( V )

0.02

0.04

0.06

0.08

0.10

0.12

0.14

RDS(on) , Drain-to -Source Voltage ( Ω )

Id = -3.7A

0 5 10 15 20 25 30

-ID , Drain Current ( A )

0.00

0.04

0.08

0.12

0.16

0.20

RDS ( on ) , Drain-to-Source On Resistance ( Ω )

VGS = -4.5V

VGS = -2.5V

IRLML6402

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Micro3 / SOT-23 Package Marking

A YW LC

PART NUMBER

Y = YEAR

W = WEEK

LOT

CODE

HALOGEN FREE

INDICATOR

PART NUMBER CODE REFERENCE:

A = IRLML2402

B =IRLML2803

C = IRLML2402

D = IRLML5103

E = IRLML6402

F = IRLML6401

G = IRLML2502

H = IRLML5203

Note: A line above the work week

(as shown here) indicates Lead-free

Micro3 (SOT-23 / TO-236AB) Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package

A2001 A27

W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

W = (27-52) IF PRECEDED BY A LETTER

Y

82008

32003

12001

YEAR

2002 2

52005

2004 4

2007

2006

7

6

2010 0

2009 9

YEAR Y

C03

WOR K

WE E K

01

02

A

W

B

04 D

24

26

25

X

Z

Y

WOR K

WE E K W

K

H

G

F

E

D

C

B

2006

2003

2002

2005

2004

2008

2007

2010

2009 J

Y51

29

28

30

C

B

D

50 X

52 Z

0.972

1.900

Recommended Footprint

0.802

0.950 2.742

Micro3 (SOT-23) (Lead-Free) Package Outline

Dimensions are shown in millimeters (inches)

e

E1

E

D

A

B

0.15 [0.006]

e1

12

3

MCBA

5

6

6

5

3X L

c

b

A1 3X

A

A2

ABC

M

0.20 [0.008]

0.10 [0.004] C

C

L2

H4L1

7

0.89 1.12

SYMBOL MAXMIN

A1

b

0.01 0.10

c

0.30 0.50

D

0.08 0.20

E

2.80 3.04

E1

2.10 2.64

e

1.20 1.40

A

0.95 BSC

L 0.40 0.60

08

MILLIMETERS

A2 0.88 1.02

e1 1.90 BSC

REF0.54L1

BSC0.25L2 BSC

REF

INCHES

80

0.0004

MIN MAX

DIMENSIONS

NOTES:

1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994

2. DIMENSIONS ARE SHOW N IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENSION: MILLIMETER.

4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.

5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.

6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES

NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS

OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.

7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.

8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.

IRLML6402

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Micro3™(SOT-23/TO-263AB) Tape & Reel Information

Dimensions are shown in millimeters (inches)

2.05 ( .080 )

1.95 ( .077 )

TR

FEED DIRECTION

4.1 ( .161 )

3.9 ( .154 )

1.6 ( .062 )

1.5 ( .060 ) 1.85 ( .072 )

1.65 ( .065 )

3.55 ( .139 )

3.45 ( .136 )

1.1 ( .043 )

0.9 ( .036 )

4.1 ( .161 )

3.9 ( .154 ) 0.35 ( .013 )

0.25 ( .010 )

8.3 ( .326 )

7.9 ( .312 )

1.32 ( .051 )

1.12 ( .045 )

9.90 ( .390 )

8.40 ( .331 )

178.00

( 7.008 )

MAX.

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 12/2011

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