J308, J309, J310, SST308, SST309, SST310, U309, U310 Datasheet. Www.s Manuals.com. Vishay

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J/SST/U308 Series
Vishay Siliconix

N-Channel JFETs
J308

SST308

U309

J309

SST309

U310

J310

SST310

PRODUCT SUMMARY
Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IDSS Min (mA)

J308

−1 to −6.5

J309

−1 to −4

−25

8

12

−25

10

J310

12

−2 to −6.5

−25

8

24

SST308

−1 to −6.5

−25

8

12

SST309

−1 to −4

−25

10

12

SST310

−2 to −6.5

−25

8

24

U309

−1 to −4

−25

10

12

U310

−2.5 to −6

−25

10

24

FEATURES

BENEFITS

D Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
D Very Low Noise: 2.7 dB @ 450 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation

D
D
D
D
D

APPLICATIONS

Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification

D
D
D
D

High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches

DESCRIPTION
The J/SST/U308 series offers superb amplification characteristics.
Of special interest is its high-frequency performance. Even at 450
MHz, this series offers high power gain at low noise.

and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)

Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities

TO-226AA
(TO-92)
D

1

S

2

G

3

For similar dual products packaged in the TO-78, see the
U430/431 data sheet.

TO-206AC
(TO-52)

TO-236
(SOT-23)
D

S

1
3

Top View
J308
J309
J310

S

1

G

2

Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
*Marking Code for TO-236

2

3

D

G and Case
Top View
U309
U310

For applications information see AN104.
Document Number: 70237
S-50149—Rev. H, 24-Jan-05

www.vishay.com

1

J/SST/U308 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 V
Gate Current :
(J/SST Prefixes) . . . . . . . . . . . . . . . . . . . . 10 mA
(U Prefix) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature :
(J/SST Prefixes) . . . . . . . . . . . . . . −55 to 150_C
(U Prefix) . . . . . . . . . . . . . . . . . . . . −65 to 175_C

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
(J/SST Prefixes)a . . . . . . . . . . . . . . . . . 350 mW
(U Prefix)b . . . . . . . . . . . . . . . . . . . . . . . 500 mW

Power Dissipation :

Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C

SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
Limits
J/SST308

Parameter

Symbol

Test Conditions

Typa

V(BR)GSS

IG = −1 mA , VDS = 0 V

−35

VGS(off)

VDS = 10 V, ID = 1 nA

J/SST309

Min Max Min

J/SST310

Max Min

Max Unit

Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain

Currentb

Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage

IDSS
IGSS

TA = 125_C

−25

−25

V

−1

−6.5

−1

−4

−2

−6.5

V

12

60

12

30

24

60

mA

−0.002

−1

−1

−1

nA

−0.001

−1

−1

−1

mA

VDS = 10 V, VGS = 0 V
VGS = −15 V, VDS = 0 V

−25

IG

VDG = 9 V, ID = 10 mA

−15

pA

rDS(on)

VGS = 0 V, ID = 1 mA

35

W

VGS(F)

IG = 10 mA
VDS = 0 V

J

0.7

1

1

1

V

Dynamic
Common-Source
Forward Transconductance

gfs

Common-Source
Output Conductance

gos

Common-Source
Input Capacitance

Ciss
i

Common Source
Common-Source
Reverse Transfer C
Capacitance

Crss

Equivalent Input
Noise Voltage

en

14

VDS = 10 V, ID = 10 mA
f = 1 kHz

VDS = 10 V
VGS = −10
10 V
f = 1 MHz

8

10

mS

110

250

250

250

5

5

5

2.5

2.5

2.5

J

4

SST

4

J

1.9

SST

1.9

VDS = 10 V, ID = 10 mA
f = 100 Hz

8

6

mS

pF

nV⁄
√Hz

High Frequency
Common-Gate
Forward Transconductance

f = 105 MHz

gfg
f

Common-Gate
Output Conductance

gog

Common Gate Power Gainc
Common-Gate

Gpg

Noise Figure

NF

VDS = 10 V
ID = 10 mA

13

f = 105 MHz

0.16

f = 450 MHz

0.55

f = 105 MHz

16

f = 450 MHz

11.5

f = 105 MHz

1.5

f = 450 MHz

2.7

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.

www.vishay.com

2

14

f = 450 MHz

mS

dB

NZB

Document Number: 70237
S-50149—Rev. H, 24-Jan-05

J/SST/U308 Series
Vishay Siliconix
SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED)
Limits
U309

Parameter

Symbol

Test Conditions

Typa

Min

V(BR)GSS

IG = −1 mA , VDS = 0 V

−35

−25

VGS(off)

VDS = 10 V, ID = 1 nA

IDSS

VDS = 10 V, VGS = 0 V

U310

Max

Min

Max

Unit

−1

−4

−2.5

−6

V

12

30

24

60

mA

Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain

Currentb

Gate Reverse Current
Gate Operating Current

IGSS

VGS = −15 V, VDS = 0 V
TA = 125_C

−25

V

−0.002

−0.15

−0.15

nA

−0.001

−0.15

−0.15

mA

IG

VDG = 9 V, ID = 10 mA

−15

pA

Drain-Source On-Resistance

rDS(on)

VGS = 0 V, ID = 1 mA

35

W

Gate-Source Forward Voltage

VGS(F)

IG = 10 mA , VDS = 0 V

0.7

1

1

V

Dynamic
Common-Source
Forward Transconductance

gfs

Common-Source
Output Conductance

gos

Common-Source
Input Capacitance

Ciss

Common-Source
Reverse Transfer Capacitance

Crss

Equivalent Input Noise Voltage

en

VDS = 10 V, ID = 10 mA
f = 1 kHz

VDS = 10 V, VGS = −10 V
f = 1 MHz
VDS = 10 V, ID = 10 mA
f = 100 Hz

14

10

mS

10

110

250

250

4

5

5

1.9

2.5

2.5

mS

pF

nV⁄
√Hz

6

High Frequency
Common-Gate
Forward Transconductance
Common-Gate
Output Conductance
Common Gate Power Gainc, d
Common-Gate

Noise

Figured

gfg
f

gog
VDS = 10 V
ID = 10 mA
Gpg

NF

f = 105 MHz

14

f = 450 MHz

13

f = 105 MHz

0.16

f = 450 MHz

0.55

f = 105 MHz

16

14

14

f = 450 MHz

11.5

10

10

f = 105 MHz

1.5

2

2

f = 450 MHz

2.7

3.5

3.5

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
d. Not a production test.

mS

dB

NZB

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

Document Number: 70237
S-50149—Rev. H, 24-Jan-05

www.vishay.com

3

J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage

40

60

30
gfs

40

20

IDSS

20

10

0

IG @ ID = 10 mA

−3

−4

IGSS @ 125_C

100 pA

10 mA
TA = 25_C

1 pA

0.1 pA

−5

IGSS @ 25_C

0

3

6

12

15

VDG − Drain-Gate Voltage (V)

On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage

Common-Source Forward Transconductance
vs. Drain Current

300

240

60

rDS

180

gos

40

120

20

60
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
0
−1

−2

−3

−4

20

gos − Output Conductance (mS)

80

0

VGS(off) = −3 V

TA = −55_C
12

25_C

8

125_C

4

0

−5

0.1

1

VGS(off) = −1.5 V

10

ID − Drain Current (mA)

Output Characteristics

15

VDS = 10 V
f = 1 kHz

16

VGS(off) − Gate-Source Cutoff Voltage (V)

Output Characteristics

30

VGS(off) = −3 V

VGS = 0 V

12

VGS = 0 V

24
ID − Drain Current (mA)

ID − Drain Current (mA)

9

VGS(off) − Gate-Source Cutoff Voltage (V)

0

−0.2 V
9
−0.4 V
6
−0.6 V
−0.8 V

3

0

0.2

0.4

0.6

VDS − Drain-Source Voltage (V)
www.vishay.com

0.8

−0.4 V

18

−0.8 V
−1.2 V

12

−1.6 V
6

−2.0 V
−2.4 V

−1.0 V

0

4

200 mA

10 pA

gfs − Forward Transconductance (mS)

100

−2

−1

200 mA

TA = 125_C

1 nA

0
0

rDS(on) − Drain-Source On-Resistance ( Ω )

10 nA

IG − Gate Leakage

IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz

80

Gate Leakage Current

50
gfs − Forward Transconductance (mS)

IDSS − Saturation Drain Current (mA)

100

0
1

0

0.2

0.4

0.6

0.8

1

VDS − Drain-Source Voltage (V)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05

J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics

20

Output Characteristics

50

VGS(off) = −1.5 V

VGS(off) = −3 V

VGS = 0 V

VGS = 0 V
40

−0.2 V

12

ID − Drain Current (mA)

ID − Drain Current (mA)

16

−0.4 V

8

−0.6 V
−0.8 V

4

−0.4 V
30

−0.8 V
−1.2 V

20

−1.6 V
10

−2.0 V

−1.0 V
0

−2.4 V

0
0

4

2

6

8

10

0

2

VDS − Drain-Source Voltage (V)

Transfer Characteristics

30

VGS(off) = −1.5 V

VDS = 10 V

VGS(off) = −3 V

8

10

VDS = 10 V

80
ID − Drain Current (mA)

ID − Drain Current (mA)

6

Transfer Characteristics

100

24

TA = −55_C

18

25_C
12

125_C

6

TA = −55_C

60

25_C

40

125_C

20

0

0
0

−0.4

−0.8

−1.2

−1.6

−2

0

−0.6

VGS − Gate-Source Voltage (V)

24

VDS = 10 V
f = 1 kHz

VGS(off) = −3 V

TA = −55_C
25_C

18

−1.8

−2.4

−3

Transconductance vs. Gate-Source Voltage

50

gfs − Forward Transconductance (mS)

VGS(off) = −1.5 V

−1.2

VGS − Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage

30
gfs − Forward Transconductance (mS)

4

VDS − Drain-Source Voltage (V)

125_C
12

6

0

VDS = 10 V
f = 1 kHz

40
TA = −55_C

30
25_C

20

125_C

10

0
0

−0.4

−0.8

−1.2

−1.6

VGS − Gate-Source Voltage (V)

Document Number: 70237
S-50149—Rev. H, 24-Jan-05

−2

0

−0.6

−1.2

−1.8

−2.4

−3

VGS − Gate-Source Voltage (V)

www.vishay.com

5

J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current

VGS(off) = −1.5 V
60

40
VGS(off) = −3 V

Assume VDD = 15 V, VDS = 5 V
RL +

60

VGS(off) = −1.5 V

20

20

VGS(off) = −3 V

0
1

10

15

100

10

Common-Source Input Capacitance
vs. Gate-Source Voltage

Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage

10

6

VDS = 5 V

3

0

−8

−4

f = 1 MHz

Crss − Reverse Feedback Capacitance (pF)

VDS = 0 V

−12

−16

8

6
VDS = 0 V
4

2

0

−20

VDS = 5 V

0

VGS − Gate-Source Voltage (V)

−8

−4

−12

−16

−20

VGS − Gate-Source Voltage (V)

Input Admittance vs. Frequency

100

1
ID − Drain Current (mA)

12

9

0.1

ID − Drain Current (mA)

f = 1 MHz

Forward Admittance vs. Frequency

100

gig

−gfg

10
(mS)

(mS)

10
big

1

bfg
1

TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate
0.1

TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate

0.1
100

200

500

f − Frequency (MHz)

www.vishay.com

6

10 V
ID

40

0

Ciss − Input Capacitance (pF)

g fs R L
AV + 1 ) R g
L os

80

80

0

Circuit Voltage Gain vs. Drain Current

100

AV − Voltage Gain

rDS(on) − Drain-Source On-Resistance ( Ω )

100

1000

100

200

500

1000

f − Frequency (MHz)

Document Number: 70237
S-50149—Rev. H, 24-Jan-05

J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance vs. Frequency

10

Output Admittance vs. Frequency

100

TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate

TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate
10

1

+grg
−grg

0.1

bog

(mS)

(mS)

−brg

gog

1

0.1

0.01
100

200

500

100

1000

200

20

Equivalent Input Noise Voltage vs. Frequency

Output Conductance vs. Drain Current

150

VGS(off) = −3 V

16

gos − Output Conductance (µS)

en − Noise Voltage nV /

Hz

VDS = 10 V

12
ID = 1 mA
8

ID = 10 mA

4

1000

500

f − Frequency (MHz)

f − Frequency (MHz)

VDS = 10 V
f = 1 kHz

120

90

TA = −55_C

60
25_C
30

125_C

0

0
10

100

1k
f − Frequency (Hz)

Document Number: 70237
S-50149—Rev. H, 24-Jan-05

10 k

100 k

0.1

1

10

ID − Drain Current (mA)

www.vishay.com

7

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Title                           : J308, J309, J310, SST308, SST309, SST310, U309, U310 - Datasheet. www.s-manuals.com.
Subject                         : J308, J309, J310, SST308, SST309, SST310, U309, U310 - Datasheet. www.s-manuals.com.
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