MMBT2222A Datasheet. Www.s Manuals.com. Nxp
User Manual: Marking of electronic components, SMD Codes 7C, 7C-, 7CW, 7Cp, 7Ct. Datasheets MMBT2222A, SMZ2516.
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DATA SHEET
Product data sheet
Supersedes data of 2000 Apr 11 2004 Jan 16
DISCRETE SEMICONDUCTORS
MMBT2222A
NPN switching transistor
2004 Jan 16 2
NXP Semiconductors Product data sheet
NPN switching transistor MMBT2222A
FEATURES
•High current (max. 600 mA)
•Low voltage (max. 40 V).
APPLICATIONS
•Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT2907A.
MARKING
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
MMBT2222A 7C*
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
MMBT2222A −plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −75 V
VCEO collector-emitter voltage open base −40 V
VEBO emitter-base voltage open collector −6 V
ICcollector current (DC) −600 mA
ICM peak collector current −800 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
2004 Jan 16 3
NXP Semiconductors Product data sheet
NPN switching transistor MMBT2222A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 60 V −10 nA
IE = 0; VCB = 60 V; Tj = 125 °C−10 µA
IEBO emitter cut-off current IC = 0; VEB = 5 V −10 nA
hFE DC current gain IC = 0.1 mA; VCE = 10 V 35 −
IC = 1 mA; VCE = 10 V 50 −
IC = 10 mA; VCE = 10 V 75 −
IC = 10 mA; VCE = 10 V;
Tamb = −55 °C
35 −
IC = 150 mA; VCE = 10 V 100 300
IC = 150 mA; VCE = 1 V 50 −
IC = 500 mA; VCE = 10 V 40 −
VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 −300 mV
IC = 500 mA; IB = 50 mA; note 1 −1 V
VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 0.6 1.2 V
IC = 500 mA; IB = 50 mA; note 1 −2 V
Cccollector capacitance IE = ie = 0; VCB = 10 V;
f = 1 MHz
−8pF
Ceemitter capacitance IC = ic = 0; VEB = 500 mV;
f = 1 MHz
−25 pF
fTtransition frequency IC = 20 mA; VCE = 20 V;
f = 100 MHz
300 −MHz
Fnoise figure IC = 100 µA; VCE = 5 V;
RS = 1 kΩ; f = 1 kHz
−4dB
Switching times (between 10% and 90% levels); (see Fig.2)
ton turn-on time ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
−35 ns
tddelay time −15 ns
trrise time −20 ns
toff turn-off time −250 ns
tsstorage time −200 ns
tffall time −60 ns
2004 Jan 16 4
NXP Semiconductors Product data sheet
NPN switching transistor MMBT2222A
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
Vi
V
CC
Fig.2 Test circuit for switching times.
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
2004 Jan 16 5
NXP Semiconductors Product data sheet
NPN switching transistor MMBT2222A
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 16 6
NXP Semiconductors Product data sheet
NPN switching transistor MMBT2222A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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Applications ⎯ Applications that are described herein for
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specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
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Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
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This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
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Printed in The Netherlands R75/02/pp7 Date of release: 2004 Jan 16 Document order number: 9397 750 12432