MMBT3904 Datasheet. Www.s Manuals.com. Galaxy
User Manual: Marking of electronic components, SMD Codes 1A, 1A **, 1A-, 1A1, 1A18, 1A20, 1A25, 1A30, 1A35, 1A4, 1A40, 1A45, 1A50, 1A55, 1A60, 1A=***, 1AM, 1AW, 1Ap, 1At. Datasheets BC846A, BC846AT, BC846AW, DAN202UM, FMMT3904, IRLML2402, KST3904, MMBT3904, MMBT3904LT1, MT501, RT9169-26GB, ZXTN25020DFLTA, ZXTN25040DFH.
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BL Galaxy Electrical Production specification NPN SWITCHING TRANSISTOR FEATURES z Epitaxial planar die construction. z Complementary PNP type available MMBT3904 Pb Lead-free (MMBT3906). z Collector Current Capability Ic=200mA. z Collector-emitter Voltage VCEO=40V. APPLICATIONS z General switching and amplification SOT-23 ORDERING INFORMATION Type No. MMBT3904 Marking Package Code 1AM SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. VCBO collector-base voltage open emitter 60 - V VCEO collector-emitter voltage open base 40 - V VEBO emitter-base voltage open collector 6 - V IC collector current (DC) - 200 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation - 250 mW Tstg storage temperature -65 +150 °C Tj junction temperature - 150 °C Tamb operating ambient temperature -65 +150 °C Document number: BL/SSSTC061 Rev.A Tamb≤25°C MAX. UNIT www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN SWITCHING TRANSISTOR MMBT3904 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. MAX. ICBO collector cut-off current IEBO UNIT IE = 0; VCB = 30 V - 50 nA emitter cut-off current IC = 0; VEB = 6 V - 50 nA hFE DC current gain VCE = 1 V; IC= 0.1mA IC = 1mA IC = 10mA IC = 50mA IC = 100mA 60 80 100 60 30 300 - VCE（sat） collector-emitter saturation voltage IC = 10mA; IB = 1mA - 200 mV IC = 50mA; IB = 5mA - 300 mV VBE（sat） base-emitter saturation voltage IC = 10mA; IB = 1mA 650 850 mV IC = 50mA; IB = 5mA - 950 mV Cc collector capacitance IE = Ie= 0; VCB= 5V; f = 1MHz - 4 pF Ce emitter capacitance IC = Ic = 0; VBE=500mV; f =1MHz - 8 pF fT transition frequency IC =10mA; VCE =20V; f =100MHz 300 - MHz F noise figure IC=100mA; VCE =5V; RS =1kΩ;f =10Hz to15.7kHz - 5 dB - 35 ns - 35 ns - 200 ns - 50 ns Switching times (between 10% and 90% levels); td delay time tr rise time ts storage time tf fall time Note ICon=10mA; IBon =1mA; IBoff = -1mA Pulse test: tp≤300 ms; d≤0.02. Document number: BL/SSSTC061 Rev.A www.galaxycn.com 2 BL Galaxy Electrical NPN SWITCHING TRANSISTOR Production specification MMBT3904 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC061 Rev.A www.galaxycn.com 3 BL Galaxy Electrical Production specification NPN SWITCHING TRANSISTOR MMBT3904 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping MMBT3904 SOT-23 3000/Tape&Reel Document number: BL/SSSTC061 Rev.A www.galaxycn.com 4 www.s-manuals.com
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