MMBT3906 PNP Switching Transistor Nxp

User Manual: Marking of electronic components, SMD Codes 7B, 7B-, 7BW, 7Bp, 7Bt. Datasheets MMBT3906, SMZ2515.

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Features
Applications
Description
Marking
Pinning
Quick reference data
Limiting values
Thermal characteristics
Characteristics
Package outline
Data sheet status
Disclaimers

DATA SHEET

Product data sheet

Supersedes data of 2000 Apr 11 2003 Mar 18

DISCRETE SEMICONDUCTORS

MMBT3906

PNP switching transistor

ook, halfpage

M3D088

2003 Mar 18 2

NXP Semiconductors Product data sheet

PNP switching transistor MMBT3906

FEATURES

•Collector current capability IC = −200 mA

•Collector-emitter voltage VCEO = −40 V.

APPLICATIONS

•General switching and amplification.

DESCRIPTION

PNP switching transistor in a SOT23 plastic package.

NPN complement: MMBT3904.

MARKING

Note

1. ∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.

∗ = W: Made in China.

TYPE NUMBER MARKING CODE(1)

MMBT3906 7B∗

PINNING

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM256

Top view

Fig.1 Simplified outline (SOT23) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −40 V

ICcollector current (DC) −200 mA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter − −40 V

VCEO collector-emitter voltage open base − −40 V

VEBO emitter-base voltage open collector − −6 V

ICcollector current (DC) − −200 mA

ICM peak collector current − −200 mA

IBM peak base current − −100 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2003 Mar 18 3

NXP Semiconductors Product data sheet

PNP switching transistor MMBT3906

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −30 V − −50 nA

IEBO emitter cut-off current IC = 0; VEB = −6 V − −50 nA

hFE DC current gain VCE = −1 V; see Fig.2

IC = −0.1 mA 60 −

IC = −1 mA 80 −

IC = −10 mA 100 300

IC = −50 mA 60 −

IC = −100 mA 30 −

VCEsat collector-emitter saturation

voltage

IC = −10 mA; IB = −1 mA − −250 mV

IC = −50 mA; IB = −5 mA − −400 mV

VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1 mA − −850 mV

IC = −50 mA; IB = −5 mA − −950 mV

Cccollector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz −4.5 pF

Ceemitter capacitance IC = ic = 0; VEB = −500 mV;

f = 1 MHz

−10 pF

fTtransition frequency IC = −10 mA; VCE = −20 V;

f = 100 MHz

250 −MHz

Fnoise figure IC = −100 µA; VCE = −5 V;

RS = 1 kΩ; f = 10 Hz to 15.7 kHz

−4dB

Switching times (between 10% and 90% levels); see Fig.7

tddelay time ICon = −10 mA; IBon = −1 mA;

IBoff = 1 mA

−35 ns

trrise time −35 ns

tsstorage time −225 ns

tffall time −75 ns

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NXP Semiconductors Product data sheet

PNP switching transistor MMBT3906

handbook, halfpage

400

600

200

MHC459

−10−1−1−10 IC (mA)

hFE

−102−103

(1)

(3)

(2)

Fig.2 DC current gain; typical values.

VCE = −1 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

0−10

−250

−50

−100

−150

−200

−2VCE (V)

(mA)

−4−6−8

MHC460

(1)

(2)(3)

(9)

(7)

(10)

(8)

(6)

(5)

(4)

Fig.3 Collector current as a function of

collector-emitter voltage.

(1) IB = −1.5 mA.

(2) IB = −1.35 mA.

(3) IB = −1.2 mA.

(4) IB = −1.05 mA.

(5) IB = −0.9 mA.

(6) IB = −0.75 mA.

(7) IB = −0.6 mA.

(8) IB = −0.45 mA.

(9) IB = −0.3 mA.

(10) IB = −0.15 mA.

Tamb = 25 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MHC461

−1−10−1IC (mA)

VBE

(mV)

−10 −102−103

(3)

(2)

(1)

Fig.4 Base-emitter voltage as a function of

collector current.

VCE = −1 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MHC462

−1−10−1IC (mA)

VBEsat

(mV)

−10 −102−103

(1)

(3)

(2)

Fig.5 Base-emitter saturation voltage as a

function of collector current.

IC/IB = 10.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2003 Mar 18 5

NXP Semiconductors Product data sheet

PNP switching transistor MMBT3906

handbook, halfpage

−103

−102

−10

MHC463

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103

(1)

(2)

(3)

Fig.6 Collector-emitter saturation voltage as a

function of collector current.

IC/IB = 10.

(1) Tamb = 25 °C.

(2) Tamb = 150 °C.

(3) Tamb = −55 °C.

handbook, full pagewidth

DUT

MGD624

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

Fig.7 Test circuit for switching times.

Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.

VBB = 1.9 V; VCC = −3 V.

Oscilloscope: input impedance Zi = 50 Ω.

2003 Mar 18 6

NXP Semiconductors Product data sheet

PNP switching transistor MMBT3906

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

2003 Mar 18 7

NXP Semiconductors Product data sheet

PNP switching transistor MMBT3906

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in personal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at

the customer’s own risk.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any inconsistency or conflict between information

in this document and such terms and conditions, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

NXP Semiconductors

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 613514/02/pp8 Date of release: 2003 Mar 18 Document order number: 9397 750 10243

MMBT3906 PNP Switching Transistor Nxp

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