S9012 Datasheet. Www.s Manuals.com. Galaxy

User Manual: Marking of electronic components, SMD Codes 2T, 2T1, 2T=***, 2TIL, 2TY. Datasheets ICS5OSK482TILF, KST4403, MMBT4403, RT9013-23GB, S8550, S9012.

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BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor
FEATURES
z

High Collector Current.(IC= -500mA)

z

Complementary To S9013.

z

Excellent HFE Linearity.

S9012

Pb
Lead-free

APPLICATIONS
z

High Collector Current.

SOT-23

ORDERING INFORMATION
Type No.

Marking

S9012

2T1

Package Code
SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-500

mA

PC

Collector Dissipation

300

mW

Tj,Tstg

Junction and Storage Temperature

-55~150

℃

Document number: BL/SSSTC081
Rev.A

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1

BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

S9012

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40V,IE=0

-0.1

μA

Collector cut-off current

ICEO

VCE=-20V,IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-1V,IC=-50mA

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB= -50mA

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA, IB= -50mA

-1.2

V

Transition frequency

fT

VCE=-6V, IC= -20mA
f=30MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

CLASSIFICATION

OF

Rank
Range
MARKING

Document number: BL/SSSTC081
Rev.A

120

TYP

MAX

UNIT

400

150

MHz
5

pF

hFE(1)
L

H

J

120-200

200-350

300-400

2T1

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2

BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

S9012

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC081
Rev.A

www.galaxycn.com
3

BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

S9012

PACKAGE OUTLINE
Plastic surface mounted package

SOT-23

SOT-23
Dim

Min

Max

A

2.85

2.95

B

1.25

1.35

C

1.0Typical

D

0.37

0.43

E

0.35

0.48

G

1.85

1.95

H

0.02

0.1

J
K

0.1Typical
2.35

2.45

All Dimensions in mm

SOLDERING FOOTPRINT

PACKAGE

Unit : mm
INFORMATION

Device

Package

Shipping

S9012

SOT-23

3000/Tape&Reel

Document number: BL/SSSTC081
Rev.A

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4

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