S9013W Datasheet. Www.s Manuals.com. Galaxy

User Manual: Marking of electronic components, SMD Codes J3, J3-, J3-***, J3=***, J3A, J3B, J3S, J3Y. Datasheets MMSZ5248, RT9166A-25PX, RT9167A-18GB, RT9167A-18PB, RT9818E-19PV, S8050, S9013, S9013W, ZC831, ZC831A, ZC831B.

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BL Galaxy Electrical

Production specification

NPN Silicon Epitaxial Planar Transistor
FEATURES
z

High Collector Current.(IC= 500mA)

z

Complementary To S9012.

z

Excellent HFE Linearity.

z

Power dissipation.(PT=200mW)

S9013W

Pb
Lead-free

APPLICATIONS
z

High Collector Current.

SOT-323

ORDERING INFORMATION
Type No.

Marking

Package Code

S9013W

J3

SOT-323

MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

500

mA

PC

Collector Dissipation

200

mW

Tj,Tstg

Junction and Storage Temperature

-55~150

℃

Document number: BL/SSSTF011
Rev.A

www.galaxycn.com
1

BL Galaxy Electrical

Production specification

NPN Silicon Epitaxial Planar Transistor

S9013W

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=0.1mA,IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=40V,IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=20V,IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=1V,IC=50mA

120

VCE=1V,IC=500mA

40

TYP

MAX

UNIT

400

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB= 50mA

0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB= 50mA

1.2

V

Transition frequency

fT

VCE=6V, IC= 20mA
f=30MHz

CLASSIFICATION

OF

Rank
Range

Document number: BL/SSSTF011
Rev.A

150

MHz

hFE(1)
L

H

J

120-200

200-350

300-400

www.galaxycn.com
2

BL Galaxy Electrical

Production specification

NPN Silicon Epitaxial Planar Transistor

S9013W

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTF011
Rev.A

www.galaxycn.com
3

BL Galaxy Electrical

Production specification

NPN Silicon Epitaxial Planar Transistor

S9013W

PACKAGE OUTLINE
Plastic surface mounted package

SOT-323

SOT-323
Dim

Min

Max

A

1.8

2.2

B

1.15

1.35

C

1.0Typical

D

0.15

0.35

E

0.25

0.40

G

1.2

1.4

H

0.02

0.1

J
K

0.1Typical
2.1

2.3

All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm

PACKAGE INFORMATION
Device

Package

Shipping

S9013W

SOT-323

3000/Tape&Reel

Document number: BL/SSSTF011
Rev.A

www.galaxycn.com
4

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