Si2302DS Datasheet. Www.s Manuals.com. Vishay
User Manual: Marking of electronic components, SMD Codes A2, A2*, A2**, A2***, A2-, A2-**, A2-***, A20, A200, A2072, A2073, A2093, A21, A22, A22*, A23*, A25, A26, A2=, A2SHB, A2p, A2s. Datasheets 1N4148WS, 2SA2072, 2SA2073, 2SA2093, 2SK436, 74AHC1G126GV, 74AHC2G125DC, 74AHC2G125DP , 74AHC2G125GD, AM2302, APM2322AA, APM2323AA, APS1006ET5-1.5, BAT18, BGA2022, CFY30, EMA2, EUP2530OIR1, FMA2A, FMMD2836, HSMS-2802, HSMS-280C, KI2302DS, MIC803-40D2VC3, MIC803-40D2VM3, MMBD4148W, N6200M5G-1.5, RT9011-GMPQV, RT9161-18PV, RT9161
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Si2302DS
Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
VDS (V)
20
rDS(on) ()
ID (A)
0.085 @ VGS = 4.5 V
2.8
0.115 @ VGS = 2.5 V
2.4
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2302DS (A2)*
*Marking Code
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
8
TA= 25C
Continuous Drain Current (TJ = 150C)b
Pulsed Drain
TA= 70C
Currenta
Power Dissipationb
TA= 70C
Operating Junction and Storage Temperature Range
2.2
A
IS
TA= 25C
V
2.8
ID
IDM
Continuous Source Current (Diode Conduction)b
Unit
10
1.6
1.25
PD
W
0.80
TJ, Tstg
–55 to 150
C
Symbol
Limit
Unit
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
100
C/W
RthJA
166
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t 5 sec.
c. Surface Mounted on FR4 Board.
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Document Number: 70628
S-53600—Rev. D, 22-May-97
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2-1
Si2302DS
Vishay Siliconix
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VGS = 0 V, ID = 10 mA
20
VGS(th)
VDS = VGS, ID = 50 mA
0.65
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
Zero Gate Voltage Drain Current
IDSS
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
On-State Drain Currenta
Drain-Source On-Resistancea
ID(on)
V
"100
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55C
10
VDS w 5 V, VGS = 4.5 V
6
VDS w 5 V, VGS = 2.5 V
4
nA
mA
A
VGS = 4.5 V, ID = 3.6 A
0.07
0.085
VGS = 2.5 V, ID = 3.1 A
0.085
0.115
W
rDS(on)
Forward Transconductancea
gfs
VDS = 5 V, ID = 3.6 A
10
Diode Forward Voltage
VSD
IS = 1.6 A, VGS = 0 V
0.76
1.2
5.4
10
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.60
Input Capacitance
Ciss
340
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
33
td(on)
12
25
36
60
34
60
10
25
VDS = 10 V
V, VGS = 4
4.5
V, ID = 3
3.6
5V
6A
VDS = 10 V
V, VGS = 0 V,
V f = 1 MHz
MH
0.65
nC
C
115
pF
F
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Notes
a. Pulse test: PW v300 ms duty cycle v2%..
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2-2
tr
td(off)
tf
VDD = 10 V
V,, RL = 5
5.5
5W
ID ^ 3.6
3 6 A,
A VGEN = 4
4.5
5V
V, RG = 6 W
ns
VNLR02
Document Number: 70628
S-53600—Rev. D, 22-May-97
Si2302DS
Vishay Siliconix
Output Characteristics
10
Transfer Characteristics
10
VGS = 5 thru 2.5 V
8
2V
I D – Drain Current (A)
I D – Drain Current (A)
8
6
4
2
TC = 125C
4
2
1.5 V
0, 0.5, 1 V
6
25C
–55C
0
0
0
1
2
3
4
5
0
0.5
VDS – Drain-to-Source Voltage (V)
1.0
2.0
2.5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.15
1000
0.12
800
C – Capacitance (pF)
r DS(on)– On-Resistance ( )
1.5
VGS = 2.5 V
0.09
VGS = 4.5 V
0.06
0.03
600
Ciss
400
Coss
200
Crss
0
0
0
2
4
6
8
10
0
Gate Charge
1.8
1.6
4
r DS(on)– On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
VDS = 10 V
ID = 3.6 A
3
2
1
0
0
1
2
3
4
5
Qg – Total Gate Charge (nC)
Document Number: 70628
S-53600—Rev. D, 22-May-97
8
12
16
20
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
5
4
6
7
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 3.6 A
1.4
1.2
1.0
0.8
0.6
–50
0
50
100
150
TJ – Junction Temperature (C)
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Si2302DS
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
r DS(on)– On-Resistance ( W )
I S – Source Current (A)
10
TJ = 150C
TJ = 25C
0.16
0.12
ID = 3.6 A
0.08
0.04
1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
2
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
8
Single Pulse Power
14
0.1
12
10
ID = 250 mA
Power (W)
V GS(th) Variance (V)
6
VGS – Gate-to-Source Voltage (V)
0.2
–0.0
4
–0.1
8
TC = 25C
Single Pulse
6
–0.2
4
–0.3
2
–0.4
–50
0
0
50
100
150
0.01
0.10
TJ – Temperature (C)
1.00
10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70628
S-53600—Rev. D, 22-May-97
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Document Number: 91000
Revision: 18-Jul-08
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