SN7002W Datasheet. Www.s Manuals.com. Infineon

User Manual: Marking of electronic components, SMD Codes SS, SS12, SS14, sSG, sSN. Datasheets 2SC2405, 2SC3929, BSS138, BZX84J-B39, RP130K501A, SN7002, SN7002N, SN7002W, SS12T3 , SS14T3 .

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SN7002W
SIPMOS Small-Signal-Transistor
Feature

Product Summary

• N-Channel

VDS

• Enhancement mode

RDS(on)

• Logic Level

ID

• dv/dt rated

60

V

5

Ω

0.23

A

PG-SOT-323
Drain
pin 3

• Qualified according to AEC Q101

Gate
pin1

• Halogen-free according to IEC61249-2-21

Type

Source
pin 2

Pb-free
Yes

Tape and Reel Information

Marking

SN7002W

Package
PG-SOT-323

H6327: 3000 pcs/reel

sSN

SN7002W

PG-SOT-323

Yes

H6433: 10000 pcs/reel

sSN

Maximum Ratings, at T j = 25 °C, unless otherwise specified
Parameter

Symbol

Continuous drain current

ID

Value

A

TA=25°C

0.23

TA=70°C

0.18

Pulsed drain current

Unit

ID puls

0.92

dv/dt

6

VGS

±20

TA=25°C

Reverse diode dv/dt

kV/µs

IS=0.23A, VDS =48V, di/dt=200A/µs, Tjmax=150°C

Gate source voltage
ESD class (JESD22-A114-HBM)

V

0 (<250V)

Power dissipation

Ptot

0.5

W

-55... +150

°C

TA=25°C

Operating and storage temperature

Tj , Tstg

IEC climatic category; DIN IEC 68-1

Rev. 2.5

55/150/56

Page 1

2011-07-13

SN7002W
Thermal Characteristics
Parameter

Symbol

Values

Unit

min.

typ.

max.

-

-

250

Characteristics
Thermal resistance, junction - ambient

RthJS

K/W

at minimal footprint

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter

Symbol

Values

Unit

min.

typ.

max.

V(BR)DSS

60

-

-

VGS(th)

0.8

1.4

1.8

Static Characteristics
Drain-source breakdown voltage

V

VGS=0, ID=250µA

Gate threshold voltage, V GS = VDS
ID=26µA

Zero gate voltage drain current

µA

I DSS

VDS=60V, VGS =0, Tj=25°C

-

-

0.1

VDS=60V, VGS =0, Tj=150°C

-

-

5

I GSS

-

-

10

nA

RDS(on)

-

4.1

7.5

Ω

RDS(on)

-

2.3

5

Gate-source leakage current
VGS=20V, VDS=0

Drain-source on-state resistance
VGS=4.5V, ID=0.2A

Drain-source on-state resistance
VGS=10V, ID=0.23A

Rev. 2.5

Page 2

2011-07-13

SN7002W
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

0.1

0.21

-

S
pF

Dynamic Characteristics
Transconductance

g fs

VDS≥2*ID*RDS(on)max,
ID=0.18A

Input capacitance

C iss

VGS=0, VDS=25V,

-

34

45

Output capacitance

C oss

f=1MHz

-

7.2

9.6

Reverse transfer capacitance

C rss

-

3

4.5

Turn-on delay time

td(on)

VDD=30V, VGS=10V,

-

2.4

3.6

Rise time

tr

ID=0.23A, RG =6Ω

-

2.8

4.2

Turn-off delay time

td(off)

-

6

9

Fall time

tf

-

8.5

12.75

-

0.11

0.17

-

0.42

0.63

-

1

1.5

V(plateau) VDD =48V, ID = 0.23 A

-

3.4

-

V

IS

-

-

0.23

A

-

-

0.92

ns

Gate Charge Characteristics
Gate to source charge

Qgs

Gate to drain charge

Qgd

Gate charge total

Qg

VDD =48V, ID =0.23A

VDD =48V, ID =0.23A,

nC

VGS =0 to 10V

Gate plateau voltage

Reverse Diode
Inverse diode continuous

TA=25°C

forward current
Inv. diode direct current, pulsedISM
Inverse diode forward voltage VSD

VGS=0, IF=0.23A

-

0.85

1.2

V

Reverse recovery time

trr

VR=30V, IF =lS ,

-

10.8

16.2

ns

Reverse recovery charge

Qrr

diF/dt=100A/µs

-

3.2

4.8

nC

Rev. 2.5

Page 3

2011-07-13

SN7002W
1 Power dissipation

2 Drain current

Ptot = f (TA)

ID = f (TA)
parameter: VGS ≥ 10 V

0.55

SN7002W

0.26

SN7002W

A

W

0.22
0.45
0.2
0.18

0.35

ID

Ptot

0.4

0.16

0.3

0.14

0.25

0.12
0.1

0.2

0.08
0.15
0.06
0.1

0.04

0.05

0.02

0
0

20

40

60

80

100

120

°C

0
0

160

20

40

60

80

100

120

TA

4 Transient thermal impedance

ID = f ( VDS )

ZthJA = f (tp )

parameter : D = 0 , TA = 25 °C

parameter : D = tp /T

1 SN7002W

10 3

/ID

ID

R

10 2

t = 25.0µs
p
100 µs

)
(on
DS

ZthJA

0
DS
=V

10

SN7002W

K/W

A

10

160

TA

3 Safe operating area

10

°C

1 ms

-1

10 1

10 ms

D = 0.50
10

0

0.20
0.10

10

0.05

-2

0.02

10 -1

DC

0.01

single pulse

10

-3

10

0

10

1

V

10

10 -2 -7
10

2

VDS
Rev. 2.5

10

-6

10

-5

10

-4

10

-3

10

-2

s

10

0

tp
Page 4

2011-07-13

SN7002W
5 Typ. output characteristic

6 Typ. drain-source on resistance

ID = f (VDS)

RDS(on) = f (ID)

parameter: Tj = 25 °C, VGS

parameter: Tj = 25 °C, VGS
7.5

0.6

10
7V
6V
5V
4.5V
4V
3.7V
3.5V
3.0V

0.4

6

RDS(on)

ID

A

3.1V
3.5V
3.7V
4.1V
4.5V
5V
6V
7V
10V

Ω

5.25
4.5
3.75

0.3

3
0.2
2.25
1.5
0.1
0.75
0
0

0.5

1

1.5

2

2.5

3

3.5

4

V

0
0

5

0.1

0.2

0.3

0.4

A

0.5

VDS

7 Typ. transfer characteristics

8 Typ. forward transconductance

ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max

gfs = f(ID)

parameter: Tj = 25 °C

parameter: Tj = 25 °C

0.5

0.3

S

gfs

A

ID

0.7

ID

0.3

0.2

0.15
0.2
0.1

0.1
0.05

0
0

0.5

1

1.5

2

2.5

3

3.5

V

0
0

4.5

VGS
Rev. 2.5

0.1

0.2

0.3

0.4

A

0.6

ID
Page 5

2011-07-13

SN7002W
(.) Drain-source on-state resistance

10 Typ. gate threshold voltage

RDS(on) = f (Tj )

VGS(th) = f (Tj )

parameter : ID = 0.23 A, VGS = 10 V

parameter: VGS = VDS ; ID =26µA

SN7002W

2.2

15

Ω

V
98%

1.8

11

VGS(th)

RDS(on)

12

10
9

1.6
typ.

1.4
1.2

8
7

1

6

2%

98%
0.8

5

0.6

4
3

0.4

typ

2

0.2

1
0
-60

-20

20

60

100

°C

0
-60

180

-20

20

60

100

Tj

°C

160

Tj

11 Typ. capacitances

12 Forward character. of reverse diode

C = f (VDS)

IF = f (VSD)

parameter: VGS =0, f=1 MHz, Tj = 25 °C

parameter: Tj

10

2

10 0

SN7002W

A
Ciss
pF

C

IF

10 -1

10

1

Coss

10 -2
Crss

Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10

0

0

5

10

15

20

V

10 -3
0

30

VDS
Rev. 2.5

0.4

0.8

1.2

1.6

2

2.4 V

3

VSD
Page 6

2011-07-13

SN7002W
13 Typ. gate charge

14 Drain-source breakdown voltage

VGS = f (QG); parameter: V DS ,

V(BR)DSS = f (Tj )

ID = 0.16 A pulsed, Tj = 25 °C
16

SN7002W

SN7002W

72

V

V(BR)DSS

V

VGS

12

10
0.2 VDS max

8

68
66
64

0.5 VDS max

62
6

0.8 VDS max

60
4

58

2

0
0

56

0.2

0.4

0.6

0.8

1

1.2

1.4 nC

1.7

QG

Rev. 2.5

54
-60

-20

20

60

100

°C

180

Tj

Page 7

2011-07-13

SN7002W

Rev. 2.5

Page 8

2011-07-13

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