SPB20N60C3, SPP20N60C3 Datasheet. Www.s Manuals.com. Infineon
User Manual: Marking of electronic components, SMD Codes 20, 20 **, 20-, 20001T, 200D1, 200D4, 200D6, 200P03LS, 202, 203D1, 203D4, 203D6, 2042B, 2050, 2051BQ, 205N10LS, 2060, 2061, 2062, 2062A, 2063, 2064, 2065, 2066, 2066A, 2067, 2068, 2069, 208Z, 20A, 20N025S, 20N03, 20N03L, 20N60A4, 20N60C3, 20N65C3, 20T, 20W, 20Y, 20p, 20t. Datasheets 1.5SMC20AT3, AT1202X, BF545A, BSC020N025S G, BSC200P03LS G, BSC205N10LS G, BZV49-C20, EMD2050, IPD20N03L, ISL6208CRZ, MTNN20N03Q8, NCP1200D100R2G, NCP1200D40R2G, NCP1200D60R2G, NCP1203
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SPP20N60C3 SPB20N60C3 Preliminary data Cool MOS™==Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS(on) in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω •=Periodic avalanche rated ID 20.7 A • Extreme dv/dt rated P-TO263-3-2 P-TO220-3-1 •=High peak current capability •=Improved transconductance •=150 °C operating temperature Type Package Ordering Code Marking SPP20N60C3 P-TO220-3-1 Q67040-S4398 20N60C3 SPB20N60C3 P-TO263-3-2 Q67040-S4397 20N60C3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 20.7 TC = 100 °C 13.1 Pulsed drain current, tp limited by Tjmax ID puls 62.1 Avalanche energy, single pulse EAS 690 EAR 1 Avalanche current, repetitive tAR limited by Tjmax IAR 20 A Reverse diode dv/dt dv/dt 6 V/ns Gate source voltage static VGS ±20 Gate source voltage dynamic VGS ±30 Power dissipation, TC = 25°C Ptot 208 W Operating and storage temperature Tj , Tstg -55... +150 °C mJ ID =10A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1) ID =20A, VDD =50V IS =20.7A, VDS <=VDD , di/dt=100A/µs, Tjmax =150°C Page 1 V 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - Linear derating factor - - 1.67 W/K - - 260 °C V Soldering temperature, Tsold K/W 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - - V(BR)DS - 700 - VGS(th) 2.1 3 3.9 VGS =0V, ID =0.25mA Drain-source avalanche breakdown voltage VGS =0V, ID =20A Gate threshold voltage, VGS = VDS ID = 1 mA Zero gate voltage drain current µA IDSS VDS = 600 V, VGS = 0 V, Tj = 25 °C - 0.5 25 VDS = 600 V, VGS = 0 V, Tj = 150 °C - - 250 - - 100 Gate-source leakage current IGSS nA VGS =20V, VDS=0V Drain-source on-state resistance Ω RDS(on) VGS =10V, ID=13.1A, Tj=25°C - 0.16 0.19 VGS =10V, ID=13.1A, Tj=150°C - 0.54 0.64 - 0.54 - Gate input resistance RG f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 17.5 - S pF Characteristics Transconductance g fs V DS≥2*I D*R DS(on)max , ID=13.1A Input capacitance Ciss V GS=0V, V DS=25V, - 3000 - Output capacitance Coss f=1MHz - 1170 - Reverse transfer capacitance Crss - 40 - - 83 - - 160 - - 10 - Effective output capacitance, 1) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 2) Co(tr) time related Turn-on delay time t d(on) V DD=380V, V GS=0/13V, pF ns ID=20.7A, R G=3.6Ω, Tj=125 Rise time tr V DD=380V, V GS=0/13V, - 5 - Turn-off delay time t d(off) ID=20.7A, R G=3.6Ω - 67 100 Fall time tf - 4.5 12 - 11 - - 33 - - 87 114 - 5.5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =480V, ID =20.7A VDD =480V, ID =20.7A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =480V, ID =20.7A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - - 20.7 - - 62.1 Characteristics Inverse diode continuous IS TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, I F=IS - 1 1.2 V Reverse recovery time trr V R=480V, I F=I S , - 500 800 ns Reverse recovery charge Qrr diF/dt=100A/µs - 11 - µC Peak reverse recovery current Irrm - 70 - A Peak rate of fall of reverse dirr /dt - 1400 - A/µs recovery current Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.00746 Rth2 Cth1 0.000439 0.017 Cth2 0.00145 Rth3 0.028 Cth3 0.00239 Rth4 0.065 Cth4 0.00499 Rth5 0.081 Cth5 0.021 Rth6 0.037 Cth6 0.146 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS ≥ 10 V SPP20N60C3 24 W A 200 20 180 18 160 16 SPP20N60C3 ID Ptot 240 140 14 120 12 100 10 80 8 60 6 40 4 20 2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 160 TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC =25°C parameter : D = tp /T 10 °C 2 SPP20N60C3 10 1 tp = 7.3µs SPP20N60C3 K/W 10 µs A ID on ) DS ( R 10 1 Z thJC = V DS /I D 10 0 10 -1 100 µs 10 -2 D = 0.50 0.20 10 1 ms 0 10 -3 0.10 0.05 10 ms 10 -4 DC 10 -1 0 10 10 1 10 2 V 10 3 VDS 10 -5 -7 10 0.02 single pulse 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp Page 5 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data 5 Typ. output characteristic 6 Typ. output characteristic ID = f (VDS ); Tj=25°C ID = f (VDS ); Tj=150°C parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS 45 80 20V 10V 8V A 7V ID 50 6V 35 60 ID 20V 10V 7V A 6,5V 30 5.5V 25 40 20 6V 5V 30 15 5,5V 20 4.5V 10 5V 10 5 4,5V 0 0 5 10 15 0 0 25 VDS 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS V 8 Drain-source on-state resistance RDS(on) =f(ID ) RDS(on) = f (Tj ) parameter: Tj =150°C, VGS parameter : ID = 13.1 A, VGS = 10 V 1.5 1.1 Ω Ω 1.3 0.9 1.2 1.1 RDS(on) R DS(on) 7 Typ. drain-source on resistance 4V 4.5V 5V 5.5V 6V 6.5V 20V 1 0.9 0.8 0.8 0.7 0.6 0.5 0.4 0.7 0.3 0.6 98% 0.5 0.2 0.4 0.1 0.3 0 SPP20N60C3 5 10 15 20 25 30 40 A ID Page 6 0 -60 typ -20 20 60 100 °C 180 Tj 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data 9 Typ. transfer characteristics 10 Gate threshold voltage ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS(th) = f (Tj) parameter: tp = 10 µs parameter: VGS = VDS , ID = 1 mA 5 80 V A 4 25°C V GS(th) ID 60 50 max. 3.5 typ. 3 2.5 40 150°C 30 min. 2 1.5 20 1 10 0 0 0.5 1 2 3 4 5 6 7 0 -60 9 V VGS -20 20 60 100 °C 160 Tj 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD ) parameter: ID = 20.7 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPP20N60C3 V SPP20N60C3 A 0,2 VDS max 10 10 1 0,8 VDS max IF V GS 12 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 20 40 60 80 100 nC 140 QGate 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 7 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data 3.6 Typ. switching time 13 Typ. switching time t = f (ID), inductive load, Tj =125°C t = f (RG ), inductive load, Tj =125°C par.: VDS =380V, VGS=0/+13V, RG =3.6Ω par.: VDS =380V, VGS=0/+13V, ID=20.7 A 10 2 10 3 td(off) td(off) ns ns t t 10 2 td(on) td(on) 10 1 tf 10 1 tr tr tf 10 0 0 4 8 12 16 10 0 0 24 A 5 10 15 20 25 30 ID 40 Ω RG 14 Typ. drain current slope 15 Typ. drain source voltage slope di/dt = f(RG ), inductive load, Tj = 125°C di/dt = f(RG ), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, ID=20.7A par.: VDS =380V, VGS=0/+13V, ID=20.7A 5000 150000 A/µs V/ns 4000 dv/dt(off) dv/dt di/dt 3500 100000 3000 di/dt(on) 2500 75000 2000 dv/dt(on) 50000 1500 1000 25000 di/dt(off) 500 0 0 5 10 15 20 25 30 40 Ω RG Page 8 0 0 5 10 15 20 25 30 40 Ω RG 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data 16 Typ. switching losses 17 Typ. switching losses E = f (ID ), inductive load, Tj=125°C E = f(RG ), inductive load, Tj =125°C par.: VDS =380V, VGS=0/+13V, RG =3.6Ω par.: VDS =380V, VGS=0/+13V, ID=20.7A 0.08 mWs 0.4 *) Eon includes SDP06S60 diode commutation losses. mWs 0.06 0.3 0.05 0.25 *) Eon includes SDP06S60 diode commutation losses. E E Eon* Eon* 0.04 0.2 0.03 0.15 Eoff Eoff 0.02 0.1 0.01 0 0 0.05 3 6 9 12 15 0 0 21 A 5 10 15 20 25 30 ID 18 Avalanche SOA 19 Avalanche energy IAR = f (tAR ) EAS = f (Tj ) par.: Tj ≤ 150 °C par.: ID = 10 A, VDD = 50 V 20 40 Ω RG 750 mJ 600 A I AR E AS 550 Tj(Start)=25°C 500 450 400 10 350 300 250 200 Tj(Start)=125°C 5 150 100 50 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 Page 9 0 20 40 60 80 100 120 °C 160 Tj 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data 20 Drain-source breakdown voltage 21 Avalanche power losses V(BR)DSS = f (Tj ) PAR = f (f ) parameter: EAR =1mJ SPP20N60C3 500 720 V 680 P AR V(BR)DSS W 660 300 640 620 200 600 580 100 560 540 -60 -20 20 60 100 °C 0 4 10 180 10 5 Tj 22 Typ. capacitances 23 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS ) MHz f 10 V 600 parameter: VGS =0V, f=1 MHz 10 5 14 pF µJ 12 11 Ciss E oss C 10 4 10 3 10 9 8 7 Coss 6 10 2 5 4 10 1 Crss 3 2 1 10 0 0 100 200 300 400 V 600 VDS 0 0 100 200 300 400 VDS Page 10 2001-07-05 6 Preliminary data SPP20N60C3 SPB20N60C3 Definition of diodes switching characteristics Page 11 2001-07-05 SPP20N60C3 SPB20N60C3 Preliminary data P-TO220-3-1 P-TO220-3-1 dimensions [mm] symbol [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 2.54 typ. 4.30 4.50 0.1 typ. 0.1693 0.1772 P T 1.17 2.30 0.0461 0.0906 1.40 2.72 0.0551 0.1071 TO-263 (D²Pak/P-TO220SMD) dimensions symbol A [inch] min max min max 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.65 0.85 0.1 typ. 0.0256 0.0335 5.08 typ. 4.30 4.50 0.2 typ. 0.1693 0.1772 F G H Page 12 [mm] K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 15 typ. 0.00 0.20 0.5906 typ. 0.0000 0.0079 Q 4.20 0.1654 R S 8° max 2.40 3.00 8° max 0.0945 0.1181 T 0.40 0.0157 5.20 0.60 0.2047 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y Z 9.40 0.3701 16.15 0.6358 2001-07-05 Preliminary data SPP20N60C3 SPB20N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 13 2001-07-05 www.s-manuals.com
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