STN1012 Datasheet. Www.s Manuals.com. Stanson

User Manual: Marking of electronic components, SMD Codes X. Datasheets STN1012.

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STN
STN
STN
STN 1012
1012
1012
1012
Dual N Channel Enhancement Mode MOSFET
0 . 65 A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN 1012 200 9 . V1
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
ST N1012 is the N -Channel enhancement mode power field effect transistor s are
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance . These devices are particularly suited for low voltage applications such as
notebook computer power management and other bettery powered circuits where
high-side switching , low in-line power loss , and resistance to transients are needed .
PIN
PIN
PIN
PIN CONFIGURATION
CONFIGURATION
CONFIGURATION
CONFIGURATION
SOT-
SOT-
SOT-
SOT- 523
523
523
523 /
/
/
/ SC-
SC-
SC-
SC- 89
89
89
89
PART
PART
PART
PART MARKING
MARKING
MARKING
MARKING
FEATURE
FEATURE
FEATURE
FEATURE
�
20 V/ 0 . 65 A, R
DS(ON)
= 380 ohm@V GS = 4.5 V
�
20 V/ 0. 5 5 A, R
DS(ON)
= 450 ohm@V GS = 2.5 V
�
20V/0.45A, R
DS(ON)
=800ohm@ V GS = 1.8 V
�
Super high density cell design for extremely
low R
DS(ON)
�
Exceptional low on-resistance and maximum
DC current capability
�
SOT- 523 / SC 89 package design
STN
STN
STN
STN 1012
1012
1012
1012
Dual N Channel Enhancement Mode MOSFET
0 . 65 A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN 1012 200 9 . V1
ABSOULTE
ABSOULTE
ABSOULTE
ABSOULTE MAXIMUM
MAXIMUM
MAXIMUM
MAXIMUM RATINGS
RATINGS
RATINGS
RATINGS (Ta = 25 ℃Unless otherwise noted )
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Typical
Typical
Typical
Typical
Unit
Unit
Unit
Unit
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
+/- 12
V
Continuous Drain Current (T
J
=150 ℃)
TA=25 ℃
I
D
0.65
A
T
A
= 80℃
0. 45
Pulsed Drain Current
I
DM
1.0
A
Continuous Source Current (Diode Conduction)
I
S
0. 3
A
TA=25 ℃
P
D
0. 27
W
T
A
=70 ℃
0.16
Operation Junction Temperature
T
J
-55/ 150
℃
Storage Temperature Range
T
STG
-55/150
℃
STN
STN
STN
STN 1012
1012
1012
1012
Dual N Channel Enhancement Mode MOSFET
0 . 65 A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN 1012 200 9 . V1
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25 ℃Unless otherwise noted )
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
OFF
OFF
OFF
OFF CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
Drain-Source Breakdown
Voltage
V
(BR)DSS
V
GS
=0V,I
D
=250uA
20
V
Gate Threshold Voltage
V
GS(th)
V
DS
=VGS,I
D
=250uA
0. 35
1. 0
V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=+/- 12 V
100
nA
Zero Gate Voltage Drain
Current
I
DSS
V
DS
=2 0 V,V
GS
=0V
1
uA
V
DS
=2 0 V,V
GS
=0V
T
J
= 55℃
5
On-State Drain Current
I
D(on)
V
DS
≦4.5 V,V
GS
= 5 V
0.7
A
Drain-source On-Resistance
R
DS(on)
V
GS
= 4.5 V,I
D
= 0. 65 A
260
380
m Ω
V
GS
= 2.5 V,I
D
= 0. 55 A
320
450
V
GS
= 1 .8 V,I
D
= 0. 55 A
420
800
Forward Tran s conductance
g
fs
V
DS
= 10 V,I
D
= 0.4 A
1.0
S
Diode Forward Voltage
V
SD
I
S
= 0. 1 5 A,V
GS
=0V
0.8
1.2
V
D
D
D
D YNAMIC
YNAMIC
YNAMIC
YNAMIC
Total Gate Charge
Q
g
V
DS
= 10 V,V
GS
= 4.5 V, V
D S
= 0. 6 A
1 .2
1.5
nC
Gate-Source Charge
Q
gs
0.2
Gate-Drain Charge
Q
gd
0.3
Turn-On Time
T
d(on)
VDD =1 0 V, RL=1 0 Ω , I D= 0.5 A,
VGEN = 4.5 V , RG=6 Ω
5
10
nS
t
r
8
15
Turn-Off Time
T
d(off)
10
18
t
f
1.2
2.8
STN
STN
STN
STN 1012
1012
1012
1012
Dual N Channel Enhancement Mode MOSFET
0 . 65 A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN 1012 200 9 . V1
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STN
STN
STN
STN 1012
1012
1012
1012
Dual N Channel Enhancement Mode MOSFET
0 . 65 A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN 1012 200 9 . V1
TYPICAL
TYPICAL
TYPICAL
TYPICAL CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
CHARACTERICTICS
STN
STN
STN
STN 1012
1012
1012
1012
Dual N Channel Enhancement Mode MOSFET
0 . 65 A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN 1012 200 9 . V1
SOT
SOT
SOT
SOT 523
523
523
523 (
(
(
( SC-89
SC-89
SC-89
SC-89 )
)
)
) PACKAGE
PACKAGE
PACKAGE
PACKAGE OUTLINE
OUTLINE
OUTLINE
OUTLINE
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