STR A6000 Series Datasheet. Www.s Manuals.com. R4.4 Sanken

User Manual: Marking of electronic components, SMD Codes A6, A6*, A6**, A6-, A6-**, A6-***, A6051M, A6052M, A6053M, A6059H, A6061H, A6061HD, A6062H, A6062HD, A6063HD, A6069H, A6069HD, A6079M, A61, A63, A63Z, A64, A64Z, A6=**, A6=***. Datasheets 1S2838, 1SS304, BAS16, BGA2012, BGU2003, MIC803-40D4VC3, MIC803-40D4VM3, MMBD2838, MMBD4448HTA, RT8004GQV, RT8004PQV, RT8008-33PJ5, RT9011-KNPJ6, RT9011-MSPQV, RT9161-39PX, RT9198-15GY, RT9198-15PY, RT9198-25PU5, RT9818A-42PU3, SGA-6389, SGA-6389Z, SGA-6489, SGA-6489Z, STR-A6051M

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Page Count: 28

Top Page
Contents
1. Absolute Maximum Ratings
2. Electrical Characteristics
3. Performance Curves
4. Functional Block Diagram
5. Pin Configuration Definitions
6. Typical Application Circuit
7. Package Outline
8. Marking Diagram
9. Operational Description
10. Design Notes
- 10.1 External Components
- 10.2 PCB Trace Layout and Component Placement
11. Pattern Layout Example
12. Reference Design of Power Supply
Important Notes

Off-Line PWM Controllers with Integrated Power MOSFET

STR-A6000 Series Data Sheet

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 1

Mar. 13, 2015 http://www.sanken-ele.co.jp/en

General Descriptions

The STR-A6000 series are power ICs for switching

power supplies, incorporating a MOSFET and a current

mode PWM controller IC.

The low standby power is accomplished by the

automatic switching between the PWM operation in

normal operation and the burst-oscillation under light

load conditions. The product achieves high

cost-performance power supply systems with few

external components.

Features

• Current Mode Type PWM Control

• Brown-In and Brown-Out function

• Auto Standby Function

No Load Power Consumption < 25mW

• Operation Mode

Normal Operation ----------------------------- PWM Mode

Standby ---------------------------- Burst Oscillation Mode

• Random Switching Function

• Slope Compensation Function

• Leading Edge Blanking Function

• Bias Assist Function

• Audible Noise Suppression function during Standby

mode

• Protections

・Overcurrent Protection (OCP)*; Pulse-by-Pulse,

built-in compensation circuit to minimize OCP point

variation on AC input voltage

・Overload Protection (OLP); auto-restart

・Overvoltage Protection (OVP); latched shutdown

・Thermal Shutdown Protection (TSD); latched shutdown

*STR-A60××HD has two types OCP

Typical Application Circuit

VAC

C6R1

BR1

PC1

OCP

1234

D/ST D/ST

S/OCP FB/OLP

GND

VCC

8 7 5

STR-A6000

D51

C51

R51

R52

U51

R54

R56

C52

PC1

R53

R55

L51

C53

VOUT

(+)

TC_STR-A6000_1_R1

(-)

Package

DIP8

Not to Scale

Lineup

• Electrical Characteristics

Products

VDSS (min.) fOSC(AVG)

STR-A605×M 650 V 67 kHz

STR-A607×M 800 V

STR-A605×H 650 V 100 kHz

STR-A606×H 700 V

STR-A606×HD 700 V 100 kHz

*STR-A60××HD has two types OCP

• MOSFET ON Resistance and Output Power, POUT*

Products RDS(ON)

(max.)

OUT

(Adapter)

OUT

(Open frame)

AC230V

AC85

~265V

AC230V

AC85

~265V

fOSC(AVG) = 67 kHz

STR-A6051M 3.95 Ω 18.5 W 14 W 31 W 21 W

STR-A6052M 2.8 Ω 22 W 17.5W

35 W 24.5 W

STR-A6053M 1.9 Ω 26 W 21W

40 W 28 W

STR-A6079M 19.2 Ω 8 W 6 W 13 W 9 W

fOSC(AVG) = 100 kHz

STR-A6059H

6Ω 17 W 11 W 30 W 19.5 W STR-A6069H

STR-A6069HD

STR-A6061H 3.95Ω 20.5 W 15 W 35 W 23.5 W

STR-A6061HD

STR-A6062H 2.8 Ω 23 W 18 W 38 W 26.5 W

STR-A6062HD

STR-A6063HD

2.3 Ω 25 W 20 W 40 W 28 W

* The output power is actual continues power that is measured at

50 °C ambient. The peak output power can be 120 to 140 % of the

value stated here. Core size, ON Duty, and thermal design affect

the output power. It may be less than the value stated here.

Applications

• Low power AC/DC adapter

• White goods

• Auxiliary power supply

• OA, AV and industrial equipment

STR-A6000 Series

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Contents

General Descriptions ------------------------------------------------------------------------------------------ 1

1. Absolute Maximum Ratings --------------------------------------------------------------------------- 3

2. Electrical Characteristics ------------------------------------------------------------------------------ 4

3. Performance Curves ------------------------------------------------------------------------------------ 6

3.1 Derating Curves ------------------------------------------------------------------------------- 6

3.2 Ambient Temperature versus Power Dissipation Curve ------------------------------ 6

3.3 MOSFET Safe Operating Area Curves --------------------------------------------------- 7

3.4 Transient Thermal Resistance Curves ---------------------------------------------------- 9

4. Functional Block Diagram --------------------------------------------------------------------------- 11

5. Pin Configuration Definitions ----------------------------------------------------------------------- 11

6. Typical Application Circuit -------------------------------------------------------------------------- 12

7. Package Outline ---------------------------------------------------------------------------------------- 13

8. Marking Diagram -------------------------------------------------------------------------------------- 13

9. Operational Description ------------------------------------------------------------------------------ 14

9.1 Startup Operation --------------------------------------------------------------------------- 14

9.2 Undervoltage Lockout (UVLO)----------------------------------------------------------- 15

9.3 Bias Assist Function ------------------------------------------------------------------------- 15

9.4 Constant Output Voltage Control -------------------------------------------------------- 15

9.5 Leading Edge Blanking Function -------------------------------------------------------- 16

9.6 Random Switching Function -------------------------------------------------------------- 16

9.7 Automatic Standby Mode Function ----------------------------------------------------- 16

9.8 Brown-In and Brown-Out Function ----------------------------------------------------- 17

9.8.1 DC Line Detection ------------------------------------------------------------------------ 17

9.8.2 AC Line Detection ------------------------------------------------------------------------ 18

9.9 Overcurrent Protection Function (OCP) ----------------------------------------------- 19

9.10 Overload Protection Function (OLP)---------------------------------------------------- 20

9.11 Overvoltage Protection (OVP) ------------------------------------------------------------ 20

9.12 Thermal Shutdown Function (TSD) ----------------------------------------------------- 20

10. Design Notes -------------------------------------------------------------------------------------------- 21

10.1 External Components----------------------------------------------------------------------- 21

10.2 PCB Trace Layout and Component Placement --------------------------------------- 22

11. Pattern Layout Example ----------------------------------------------------------------------------- 24

12. Reference Design of Power Supply ----------------------------------------------------------------- 25

Important Notes ---------------------------------------------------------------------------------------------- 27

STR-A6000 Series

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 3

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1. Absolute Maximum Ratings

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); and current coming

out of the IC (sourcing) is negative current (−).

Unless otherwise specified, TA = 25 °C, 7 pin = 8 pin.

Parameter Symbol Test Conditions Pins Rating Units Remarks

Drain Peak Current(1) IDPEAK Single pulse 8 – 1

1.2

A6079M

1.8

A6059H / 69H

/ 69HD

2.5

A6051M / 61H

/ 61HD

3.0

A6052M / 62H

/ 62HD

4.0 A6053M / 63HD

Avalanche Energy(2)(3) EAS

ILPEAK=1.2A

8 – 1

A6079M

ILPEAK=1.8A 24

A6059H / 69H

/ 69HD

ILPEAK=2A 46 A6061H / 61HD

ILPEAK=2A 47 A6051M

ILPEAK=2.2A 56 A6062H / 62HD

ILPEAK=2.3A 62 A6052M

ILPEAK=2.5A 72 A6063HD

ILPEAK=2.7A 86 A6053M

S/OCP Pin Voltage VS/OCP 1 − 3 −2 to 6 V

BR Pin Voltage VBR 2 − 3 −0.3 to 7 V

BR Pin Sink Current IBR 2 − 3 1.0 mA

FB/OLP Pin Voltage

VFB 4 − 3 −0.3 to 14 V

FB/OLP Pin Sink Current IFB 4 − 3 1.0 mA

VCC Pin Voltage

VCC 5 − 3 32 V

MOSFET Power

Dissipation

(4) PD1 (5) 8 – 1 1.35 W

Control Part Power

Dissipation

PD2 5 – 3 1.2 W

Operating Ambient

Temperature

(6)

TOP — −20 to 125 °C

Storage Temperature Tstg — −40 to 125 °C

Channel Temperature Tch — 150 °C

(1) Refer to 3.3 MOSFET Safe Operating Area Curves

(2) Refer to Figure 3-2 Avalanche Energy Derating Coefficient Curve

(3) Single pulse, VDD = 99 V, L = 20 mH

(4) Refer to Figure 3-3 Ambient temperature versus power dissipation curve

(5) When embedding this hybrid IC onto the printed circuit board (cupper area in a 15 mm × 15 mm)

(6) The recommended internal frame temperature, TF, is 115°C (max.)

STR-A6000 Series

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2. Electrical Characteristics

Current polarities are defined as follows: current going into the IC (sinking) is positive current (+); and current

coming out of the IC (sourcing) is negative current (−).

Unless otherwise specified, TA = 25 °C, VCC = 18 V, 7 pin = 8 pin.

Parameter Symbol

Test

Conditions

Pins Min. Typ. Max. Units Remarks

Power Supply Startup Operation

Operation Start Voltage VCC(ON) 5 − 3 13.8 15.3 16.8 V

Operation Stop Voltage(1) VCC(OFF) 5 − 3 7.3 8.1 8.9 V

Circuit Current in Operation ICC(ON) VCC = 12 V 5 − 3 — — 2.5 mA

Startup Circuit Operation

Voltage

VST(ON) 8 − 3 — 38 — V

Startup Current ISTARTUP VCC

= 13.5 V

5 − 3 − 3.7 − 2.5 − 1.5 mA

Startup Current Biasing

Threshold Voltage

VCC(BIAS)

= − 100 µA 5 − 3 8.5 9.5 10.5 V

Normal Operation

Average Switching

Frequency fOSC(AVG) 8 − 3 60 67 74 kHz A60××M

90 100 110 A60××H / HD

Switching Frequency

Modulation Deviation Δf 8 − 3 — 5 — kHz A60××M

— 8 — A60××H / HD

Maximum ON Duty DMAX 8 − 3 77 83 89 %

Minimum ON Time tON(MIN) 8 − 3 — 540 — ns A60××M

— 470 — A60××H / HD

Protection Function

Leading Edge Blanking Time tBW — — 340 — ns A60××M

— 280 — A60××H / HD

OCP Compensation

Coefficient DPC — — 20 —

mV/μs A60××M

— 33 — A60××H / HD

OCP Compensation ON Duty DDPC — — 36 — %

OCP Threshold Voltage at

Zero ON Duty

VOCP(L) 1 − 3 0.70 0.78 0.86 V

OCP Threshold Voltage at

36% ON Duty

VOCP(H) VCC = 32 V 1 − 3 0.81 0.9 0.99 V

OCP Threshold Voltage in

Leading Edge Blanking Time

VOCP(LEB) 1 − 3 1.32 1.55 1.78 V A60××HD

Maximum Feedback Current IFB(MAX) VCC = 12 V 4 − 3 − 340 − 230 − 150 µA

Minimum Feedback Current IFB(MIN) 4 − 3 − 30 − 15 − 7 µA

FB/OLP pin Oscillation Stop

Threshold Voltage

VFB(STB) 4 − 3 0.85 0.95 1.05 V

OLP Threshold Voltage VFB(OLP) 4 − 3 7.3 8.1 8.9 V

OLP Operation Current ICC(OLP) VCC = 12 V 5 − 3 − 300 600 µA

OLP Delay Time tOLP — 54 68 82 ms

(1) VCC(BIAS) > VCC(OFF) always.

STR-A6000 Series

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Parameter Symbol

Test

Conditions

Pins Min. Typ. Max. Units Remarks

FB/OLP Pin Clamp Voltage VFB(CLAMP) 4 − 3 11 12.8 14 V

Brown-In Threshold Voltage VBR(IN) VCC = 32 V 2 − 3 5.2 5.6 6 V

Brown-Out Threshold

Voltage

VBR(OUT) VCC = 32 V 2 − 3 4.45 4.8 5.15 V

BR Pin Clamp Voltage VBR(CLAMP) VCC = 32 V 2 − 3 6 6.4 7 V

BR Function Disabling

Threshold

VBR(DIS) VCC = 32 V 2 − 3 0.3 0.48 0.7 V

OVP Threshold Voltage VCC(OVP) 5 − 3 26 29 32 V

Latch Circuits Holding

Current

(2)

ICC(LATCH) VCC = 9.5 V 5 − 3 — 700 — μA

Thermal Shutdown Operating

Temperature

Tj(TSD) — 135 — — °C

MOSFET

Drain-to-Source Breakdown

Voltage VDSS 8 – 1

650 — —

A605×

700 — — A606×

800 — — A607×

Drain Leakage Current IDSS 8 – 1 — — 300 μA

On Resistance RDS(ON) IDS = 0.4A 8 − 1

— — 19.2

A6079M

— — 6

A6059H / 69H

/ 69HD

— — 3.95

A6051M / 61H

/ 61HD

— — 2.8

A6052M / 62H

/ 62HD

— — 2.3 A6063HD

— — 1.9 A6053M

Switching Time tf 8 – 1 — — 250 ns

— — 400 ns A6053M

Thermal Resistance

Channel to Case Thermal

Resistance

(3)

θch-C

— — — 22 °C/W

(2) A latch circuit is a circuit operated with Overvoltage Protection function (OVP) and/or Thermal Shutdown function

(TSD) in operation.

(3) θch-C is thermal resistance between channel and case. Case temperature (TC) is measured at the center of the case top

surface.

STR-A6000 Series

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3. Performance Curves

3.1 Derating Curves

Figure 3-1. SOA Temperature Derating Coefficient

Curve Figure 3-2. Avalanche Energy Derating Coefficient

Curve

3.2 Ambient Temperature versus Power Dissipation Curve

Figure 3-3. Ambient Temperature Versus Power

Dissipation Curve

100

025 50 75 100 125 150

Safe Operating Area

Temperature Derating Coefficient (%)

Channel Temperature, Tch (°C)

100

25 50 75 100 125 150

EAS Temperature Derating Coefficient (%)

Channel Temperature, Tch (°C)

0.2

0.4

0.6

0.8

1.2

1.4

1.6

020 40 60 80 100 120 140 160

Power Dissipation, PD1 (W)

Ambient Temperature, TA(°C )

1.35W

STR-A6000 Series

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3.3 MOSFET Safe Operating Area Curves

When the IC is used, the safe operating area curve should be multiplied by the temperature derating coefficient

derived from Figure 3-1. The broken line in the safe operating area curve is the drain current curve limited by

on-resistance.

Unless otherwise specified, TA = 25 °C, Single pulse.

• STR-A6051M

• STR-A6052M

• STR-A6053M

• STR-A6079M

0.01

0.1

110 100 1000

Drain Current, I

D(A)

Drain-to-Source Voltage (V)

0.01

0.1

110 100 1000

Drain Current, ID(A)

Drain-to-Source Voltage (V)

0.01

0.1

110 100 1000

Drain Current, ID(A)

Drain-to-Source Voltage (V)

0.01

0.1

110 100 1000

Drain Current, ID(A)

Drain-to-Source Voltage (V)

0.1ms

1ms

0.1ms

1ms

0.1ms

1ms

0.1ms

1ms

STR-A6000 Series

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• STR-A6059H

• STR-A6061H / 61HD

• STR-A6062H / 62HD

• STR-A6063HD

• STR-A6069H / 69HD

0.01

0.1

110 100 1000

Drain Current, I

D(A)

Drain-to-Source Voltage (V)

0.01

0.1

110 100 1000

Drain Current, ID(A)

Drain-to-Source Voltage (V)

0.01

0.1

110 100 1000

Drain Current, ID(A)

Drain-to-Source Voltage (V)

0.01

0.1

110 100 1000

Drain Current, ID(A)

Drain-to-Source Voltage (V)

0.1ms

1ms

0.1ms

1ms

0.1ms

1ms

0.1ms

1ms

Drain Current, ID (A)

Drain-to-Source Voltage (V)

STR-A6000 Series

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3.4 Transient Thermal Resistance Curves

• STR-A6051M / 61H / 61HD

• STR-A6052M / 62H / 62HD

• STR-A6053M

0.01

0.1

Transient Thermal Resistance,

θch-c (°C/W)

Time (s)

0.01

0.1

Transient Thermal Resistance,

θch-c (°C/W)

Time (s)

1µ 10µ 100µ 1m 10m 100m

Time (s)

0.1

0.01

Transient Thermal Resistance,

θch-c (°C/W)

STR-A6000 Series

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• STR-A6059M / 69H / 69HD

• STR-A6079M

• STR-A6063HD

0.01

0.1

Transient Thermal Resistance

θch-c (°C/W)

Time (s)

0.01

0.1

Transient Thermal Resistance

θch-c (°C/W)

Time (s)

100n 1µ 10µ 100µ 1m 10m 100m

1µ 10µ 100µ 1m 10m 100m

Time (s)

0.1

0.01

0.001

Transient Thermal Resistance

θch-c (°C/W)

STR-A6000 Series

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4. Functional Block Diagram

UVLO OVP TSD

REG

Brown-in

Brown-out

PWM OSC

OLP

Feedback

control

Slope

compensation

LEB

Drain peak current

compensation

OCP

Startup

DRV

VREG

6.4V

12.8V

7V VCC

VCC

FB/OLP

D/ST

S/OCP

GND

7,8

BD_STR-A6000_R1

5. Pin Configuration Definitions

S/OCP

GND

FB/OLP VCC

D/ST

Pin Name Descriptions

1 S/OCP

MOSFET source and overcurrent protection

(OCP) signal input

2 BR Brown-In and Brown-Out detection voltage input

3 GND Ground

4 FB /OLP

Constant voltage control signal input and over

load protection (OLP) signal input

5 VCC

Power supply voltage input for control part and

overvoltage protection (OVP) signal input

6 − (Pin removed)

7 D/ST MOSFET drain and startup current input

STR-A6000 Series

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6. Typical Application Circuit

The following drawings show circuits enabled and disabled the Brown-In/Brown-Out function.

The PCB traces D/ST pins should be as wide as possible, in order to enhance thermal dissipation.

In applications having a power supply specified such that D/ST pin has large transient surge voltages, a clamp

snubber circuit of a capacitor-resistor-diode (CRD) combination should be added on the primary winding P, or a

damper snubber circuit of a capacitor (C) or a resistor-capacitor (RC) combination should be added between the D/ST

pin and the S/OCP pin.

VAC

C6 R1

BR1

PC1

OCP

CRD clamp snubber

C（RC）

damper snubber 1234

D/ST D/ST

S/OCP FB/OLP

GND

VCC

8 7 5

STR-A6000

D51

C51

R51

R52

U51

R54

R56

C52

PC1

R53

R55

L51

C53

VOUT

(+)

TC_STR-A6000_2_R1

(-)

Figure 6-1. Typical Application Circuit (enabled Brown-In/Brown-Out function, DC line detection)

VAC

C6 R1

BR1

PC1

ROCP CY

CRD clamp snubber

C（RC）

damper snubber 1234

D/ST D/ST

S/OCP FB/OLP

GND

VCC

8 7 5

STR-A6000

D51

C51

R51

R52

U51

R54

R56

C52

PC1

R53

R55

L51

C53

VOUT

TC_STR-A6000_3_R1

(+)

(-)

Figure 6-2. Typical Application Circuit (disabled Brown-In/Brown-Out function)

STR-A6000 Series

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7. Package Outline

• DIP8 (The following show a representative type of DIP8.)

NOTES:

1) dimensions in millimeters

2) Pb-free (RoHS compliant)

8. Marking Diagram

Part Number

A 6 0 × × ×

S K Y M D

Control Number

STR-A60××M

STR-A60××H

Lot Number:

Y is the last digit of the year of manufacture (0 to 9)

M is the month of the year (1 to 9, O, N, or D)

D is a period of days:

1: the first 10 days of the month (1st to 10th)

2: the second 10 days of the month (11th to 20th)

3: the last 10–11 days of the month (21st to 31st)

A 6 0 × × H

S K Y M D D

STR-A60××HD

Part Number

Control Number

Lot Number:

Y is the last digit of the year of manufacture (0 to 9)

M is the month of the year (1 to 9, O, N, or D)

D is a period of days:

1: the first 10 days of the month (1st to 10th)

2: the second 10 days of the month (11th to 20th)

3: the last 10–11 days of the month (21st to 31st)

STR-A6000 Series

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9. Operational Description

All of the parameter values used in these descriptions

are typical values, unless they are specified as minimum

or maximum.

Current polarities are defined as follows: current

going into the IC (sinking) is positive current (+); and

current coming out of the IC (sourcing) is negative

current (−).

9.1 Startup Operation

Figure 9-1 shows the circuit around IC. Figure 9-2

shows the start up operation.

The IC incorporates the startup circuit. The circuit is

connected to D/ST pin. When D/ST pin voltage reaches

to Startup Circuit Operation Voltage VST(ON) = 38 V, the

startup circuit starts operation.

During the startup process, the constant current,

ISTARTUP = − 2.5 mA, charges C2 at VCC pin. When

VCC pin voltage increases to VCC(ON) = 15.3 V, the

control circuit starts operation.

During the IC operation, the voltage rectified the

auxiliary winding voltage, VD, of Figure 9-1 becomes a

power source to the VCC pin. After switching operation

begins, the startup circuit turns off automatically so that

its current consumption becomes zero.

The approximate value of auxiliary winding voltage is

about 15 V to 20 V, taking account of the winding turns

of D winding so that VCC pin voltage becomes

Equation (1) within the specification of input and output

voltage variation of power supply.

.)(minV

V.)(max

OVP(CC

CC)BIAS

(CC <<

⇒10.5 (V)

<< CC

26 (V) (1)

The oscillation start timing of IC depends on

Brown-In / Brown-Out function (refer to Section 9.8).

 Without Brown-In / Brown-Out function (BR pin

voltage is VBR(DIS) = 0.48 V or less)

When VCC pin voltage increases to VCC(ON), the IC

starts switching operation, As shown in Figure 9-2.

The startup time of IC is determined by C2 capacitor

value. The approximate startup time tSTART (shown in

Figure 9-2) is calculated as follows:

STRATUP

)INT(CC)ON(CC

START

×C2

t－

(2)

where,

tSTART : Startup time of IC (s)

VCC(INT) : Initial voltage on VCC pin (V)

 With Brown-In / Brown-Out function

When BR pin voltage is more than VBR(DIS) = 0.48 V

and less than VBR(IN) = 5.6 V, the Bias Assist Function

(refer to Section 9.3) is disabled. Thus, VCC pin

voltage repeats increasing to VCC(ON) and decreasing to

VCC(OFF) (shown in Figure 9-3). When BR pin voltage

becomes VBR(IN) or more, the IC starts switching

operation.

VAC

D2R2

BR1

VCC

GND

D/ST

7, 8

Figure 9-1. VCC Pin Peripheral Circuit

(Without Brown-In / Brown-Out)

VCC(ON)

VCC pin

voltage

Drain current,

START

Figure 9-2. Startup Operation

(Without Brown-In / Brown-Out)

CC(ON)

VCC pin

voltage

Drain current,

START

BR pin

voltage V

BR(IN)

CC(OFF)

Figure 9-3. Startup Operation

(With Brown-In / Brown-Out)

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9.2 Undervoltage Lockout (UVLO)

Figure 9-4 shows the relationship of VCC pin voltage

and circuit current ICC. When VCC pin voltage decreases

to VCC(OFF) = 8.1 V, the control circuit stops operation by

UVLO (Undervoltage Lockout) circuit, and reverts to

the state before startup.

Circuit current, ICC

ICC（ON）

VCC（OFF）VCC（ON）VCC pin

voltage

StartStop

Figure 9-4. Relationship between

VCC Pin Voltage and ICC

9.3 Bias Assist Function

Figure 9-5 shows VCC pin voltage behavior during

the startup period.

After VCC pin voltage increases to VCC(ON) = 15.3 V

at startup, the IC starts the operation. Then circuit

current increases and VCC pin voltage decreases. At the

same time, the auxiliary winding voltage VD increases in

proportion to output voltage. These are all balanced to

produce VCC pin voltage.

IC starts operation

VCC pin

voltage

VCC(ON)

VCC(BIAS)

VCC(OFF)

Startup failure

Startup success

Target operating

voltage

Time

Bias assist period

Increase with rising of

output voltage

Figure 9-5. VCC Pin Voltage during Startup Period

The surge voltage is induced at output winding at

turning off a power MOSFET. When the output load is

light at startup, the surge voltage causes the unexpected

feedback control. This results the lowering of the output

power and VCC pin voltage. When the VCC pin voltage

decreases to VCC(OFF) = 8.1 V, the IC stops switching

operation and a startup failure occurs. In order to prevent

this, the Bias Assist function is activated when the VCC

pin voltage decreases to the startup current threshold

biasing voltage, VCC(BIAS) = 9.5 V. While the Bias Assist

function is activated, any decrease of the VCC pin

voltage is counteracted by providing the startup current,

ISTARTUP, from the startup circuit. Thus, the VCC pin

voltage is kept almost constant.

By the Bias Assist function, the value of C2 is

allowed to be small and the startup time becomes shorter.

Also, because the increase of VCC pin voltage becomes

faster when the output runs with excess voltage, the

response time of the OVP function becomes shorter.

It is necessary to check and adjust the startup process

based on actual operation in the application, so that poor

starting conditions may be avoided.

9.4 Constant Output Voltage Control

The IC achieves the constant voltage control of the

power supply output by using the current-mode control

method, which enhances the response speed and

provides the stable operation.

The FB/OLP pin voltage is internally added the slope

compensation at the feedback control (refer to Section 4

Functional Block Diagram), and the target voltage, VSC,

is generated. The IC compares the voltage, VROCP, of a

current detection resistor with the target voltage, VSC, by

the internal FB comparator, and controls the peak value

of VROCP so that it gets close to VSC, as shown in Figure

9-6 and Figure 9-7.

PC1

OCP

1 3 4

S/OCP FB/OLP

GND

ROCP

Figure 9-6. FB/OLP Pin Peripheral Circuit

FB Comparator

Drain current,

Voltage on both

sides of ROCP

VROCP

Target voltage including

Slope Compensation

Figure 9-7. Drain Current, ID, and FB Comparator

Operation in Steady Operation

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• Light load conditions

When load conditions become lighter, the output

voltage, VOUT, increases. Thus, the feedback current

from the error amplifier on the secondary-side also

increases. The feedback current is sunk at the FB/OLP

pin, transferred through a photo-coupler, PC1, and the

FB/OLP pin voltage decreases. Thus, VSC decreases,

and the peak value of VROCP is controlled to be low,

and the peak drain current of ID decreases.

This control prevents the output voltage from

increasing.

• Heavy load conditions

When load conditions become greater, the IC

performs the inverse operation to that described above.

Thus, VSC increases and the peak drain current of ID

increases.

This control prevents the output voltage from

decreasing.

In the current mode control method, when the drain

current waveform becomes trapezoidal in continuous

operating mode, even if the peak current level set by the

target voltage is constant, the on-time fluctuates based

on the initial value of the drain current.

This results in the on-time fluctuating in multiples of

the fundamental operating frequency as shown in Figure

9-8. This is called the subharmonics phenomenon.

In order to avoid this, the IC incorporates the Slope

Compensation function. Because the target voltage is

added a down-slope compensation signal, which reduces

the peak drain current as the on-duty gets wider relative

to the FB/OLP pin signal to compensate VSC, the

subharmonics phenomenon is suppressed.

Even if subharmonic oscillations occur when the IC

has some excess supply being out of feedback control,

such as during startup and load shorted, this does not

affect performance of normal operation.

tON1

Target voltage

without slope compensation

tON2

T T T

Figure 9-8. Drain Current, ID, Waveform

in Subharmonic Oscillation

9.5 Leading Edge Blanking Function

The IC uses the peak-current-mode control method

for the constant voltage control of output.

In peak-current-mode control method, there is a case

that the power MOSFET turns off due to unexpected

response of FB comparator or overcurrent protection

circuit (OCP) to the steep surge current in turning on a

power MOSFET.

In order to prevent this response to the surge voltage

in turning-on the power MOSFET, the Leading Edge

Blanking, tBW (STR-A60××H for 340 ns, STR-A60××H

and STR-A60××HD for 280 ns) is built-in. During tBW,

the OCP threshold voltage becomes about 1.7 V which

is higher than the normal OCP threshold voltage (refer

to Section 9.9).

9.6 Random Switching Function

The IC modulates its switching frequency randomly

by superposing the modulating frequency on fOSC(AVG) in

normal operation. This function reduces the conduction

noise compared to others without this function, and

simplifies noise filtering of the input lines of power

supply.

9.7 Automatic Standby Mode Function

Automatic standby mode is activated automatically

when the drain current, ID, reduces under light load

conditions, at which ID is less than 15 % to 20 % of the

maximum drain current (it is in the OCP state). The

operation mode becomes burst oscillation, as shown in

Figure 9-9. Burst oscillation mode reduces switching

losses and improves power supply efficiency because of

periodic non-switching intervals.

Normal

operation Standby

operation Normal

operation

Burst oscillation

Output current,

OUT

Drain current,

Below several kHz

Figure 9-9. Auto Standby Mode Timing

Generally, to improve efficiency under light load

conditions, the frequency of the burst oscillation mode

becomes just a few kilohertz. Because the IC suppresses

the peak drain current well during burst oscillation mode,

audible noises can be reduced.

If the VCC pin voltage decreases to VCC(BIAS) = 9.5 V

during the transition to the burst oscillation mode, the

Bias Assist function is activated and stabilizes the

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Standby mode operation, because ISTARTUP is provided to

the VCC pin so that the VCC pin voltage does not

decrease to VCC(OFF).

However, if the Bias Assist function is always

activated during steady-state operation including

standby mode, the power loss increases. Therefore, the

VCC pin voltage should be more than VCC(BIAS), for

example, by adjusting the turns ratio of the auxiliary

winding and secondary winding and/or reducing the

value of R2 in Figure 10-2 (refer to Section 10.1

Peripheral Components for a detail of R2).

9.8 Brown-In and Brown-Out Function

This function stops switching operation when it

detects low input line voltage, and thus prevents

excessive input current and overheating.

This function turns on and off switching operation

according to the BR pin voltage detecting the AC input

voltage. When BR pin voltage becomes more than

VBR(DIS) = 0.48 V, this function is activated.

Figure 9-10 shows waveforms of the BR pin voltage

and the drain currnet.

Even if the IC is in the operating state that the VCC

pin voltage is VCC(OFF) or more, when the AC input

voltage decreases from steady-state and the BR pin

voltage falls to VBR(OUT) = 4.8 V or less for the OLP

Delay Time, tOLP = 68 ms, the IC stops switching

operation. When the AC input voltage increases and the

BR pin voltage reaches VBR(IN) = 5.6 V or more in the

operating state that the VCC pin voltage is VCC(OFF) or

more, the IC starts switching operation.

In case the Brown-In and Brown-Out function is

unnecessary, connect the BR pin trace to the GND pin

trace so that the BR pin voltage is VBR(DIS) or less.

BR Pin Voltage

VBR(IN)

VBR(OUT)

tOLP

Drain Current,

Figure 9-10. BR Pin Voltage and Drain Current

Waveforms

During burst oscillation mode, this function operates

as follows:

● STR-A60××M and STR-A60××H:

This function is disabled during switching operation

stop period in burst oscillation mode. When the BR

pin voltage falls to VBR(OUT) or less in burst oscillation

mode and the sum of switching operation period

becomes tOLP = 68 ms or more, the IC stops switching

operation.

● STR-A60××HD:

When the BR pin voltage falls to VBR(OUT) = 4.8 V or

less for tOLP = 68 ms, the IC stops switching operation.

There are two types of detection method as follows:

9.8.1 DC Line Detection

Figure 9-11 shows BR pin peripheral circuit of DC

line detection. There is a ripple voltage on C1 occurring

at a half period of AC cycle. In order to detect each peak

of the ripple voltage, the time constant of RC and C4

should be shorter than a half period of AC cycle.

Since the cycle of the ripple voltage is shorter than

tOLP, the switching operation does not stop when only the

bottom part of the ripple voltage becomes lower than

VBR(OUT).

Thus it minimizes the influence of load conditions on

the voltage detection.

VDC U1

GND

VAC

BR1

Figure 9-11. DC Line Detection

The components around BR pin:

・ RA and RB are a few megohms. Because of high

voltage applied and high resistance, it is

recommended to select a resistor designed against

electromigration or use a combination of resistors

in series for that to reduce each applied voltage,

according to the requirement of the application.

・ RC is a few hundred kilohms

・ C4 is 470 pF to 2200 pF for high frequency noise

reduction

Neglecting the effect of both input resistance and

forward voltage of rectifier diode, the reference value of

C1 voltage when Brown-In and Brown-Out function is

activated is calculated as follows:

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









+

+×=

)TH(BR)OP(DC

1VV

(3)

where,

VDC(OP) : C1 voltage when Brown-In and

Brown-Out function is activated

VBR(TH) : Any one of threshold voltage of BR pin

(see Table 9-1)

Table 9-1. BR Pin Threshold Voltage

Parameter Symbol

Value

(Typ.)

Brown-In Threshold Voltage VBR(IN) 5.6 V

Brown-Out Threshold Voltage VBR(OUT) 4.8 V

VDC(OP) can be expressed as the effective value of AC

input voltage using Equation (4).

)OP(DCRMS

)OP(AC V

V×=

(4)

RA, RB, RC and C4 should be selected based on actual

operation in the application.

9.8.2 AC Line Detection

Figure 9-12 shows BR pin peripheral circuit of AC

line detection. In order to detect the AC input voltage,

the time constant of RC and C4 should be longer than the

period of AC cycle. Thus the response of BR pin

detection becomes slow compared with the DC line

detection.

This method detects the AC input voltage, and thus it

minimizes the influence from load conditions. Also, this

method is free of influence from C1 charging and

discharging time, the latch mode can be released

quickly*

GND

BR1

VCC

Figure 9-12. AC Line Detection

* High-Speed Latch Release

When Overvoltage Protection function (OVP) or

Thermal Shutdown function (TSD) are activated,

the IC stops switching operation in latch mode.

Releasing the latch mode is done by decreasing the

VCC pin voltage below VCC(OFF) or by decreasing

the BR pin voltage below VBR(OUT).

In case of the DC line detection or without

Brown-in / Brown-Out function, the release time

depends on discharge time of C1 and takes longer

time until VCC pin voltage decreases to release

voltage.

In case of the AC line detection, BR pin voltage is

decreased quickly when AC input voltage, VAC, is

turned off, and thus the latch mode is quickly

released.

The components around BR pin:

・ RA and RB are a few megohms. Because of high

voltage applied and high resistance, it is

recommended to select a resistor designed against

electromigration or use a combination of resistors

in series for that to reduce each applied voltage,

according to the requirement of the application.

・ RC is a few hundred kilohms

・ RS must be adjusted so that the BR pin voltage is

more than VBR(DIS) = 0.48 V when the VCC pin

voltage is VCC(OFF) = 8.1 V

・ C4 is 0.22 μF to 1 μF for averaging AC input

voltage and high frequency noise reduction.

Neglecting the effect of input resistance is zero, the

reference effective value of AC input voltage when

Brown-In and Brown-Out function is activated is

calculated as follows:











+

+××

)TH

(

BRRMS

)OP

(

(5)

where,

VAC(OP)RMS :The effective value of AC input voltage

when Brown-In and Brown-Out function

is activated

VBR(TH) :Any one of threshold voltage of BR pin

(see Table 9-1)

RA, RB, RC and C4 should be selected based on actual

operation in the application.

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9.9 Overcurrent Protection Function

(OCP)

Overcurrent Protection Function (OCP) detects each

drain peak current level of a power MOSFET on

pulse-by-pulse basis, and limits the output power when

the current level reaches to OCP threshold voltage.

During Leading Edge Blanking Time, the operation of

OCP is different depending on the products as follows.

● STR-A60××HD:

During Leading Edge Blanking Time, the OCP

threshold voltage becomes VOCP(LEB) = 1.55 V which

is higher than the normal OCP threshold voltage as

shown in Figure 9-13. Changing to this threshold

voltage prevents the IC from responding to the surge

voltage in turning-on the power MOSFET. This

function operates as protection at the condition such

as output windings shorted or unusual withstand

voltage of secondary-side rectifier diodes.

● STR-A60××M and STR-A60××H:

OCP is disabled during Leading Edge Blanking Time.

When power MOSFET turns on, the surge voltage

width of S/OCP pin should be less than tBW, as shown in

Figure 9-13. In order to prevent surge voltage, pay extra

attention to ROCP trace layout (refer to Section 10.2).

In addition, if a C (RC) damper snubber of Figure

9-14 is used, reduce the capacitor value of damper

snubber.

Surge pulse voltage width at turning on

OCP

’

OCP(LEB)

(STR-A60××HD)

Figure 9-13. S/OCP Pin Voltage

D51

OCP

C51

C（RC）

Damper snubber

7,8

D/ST

S/OCP

C（RC）

Damper snubber

Figure 9-14. Damper Snubber

< Input Compensation Function >

ICs with PWM control usually have some propagation

delay time. The steeper the slope of the actual drain

current at a high AC input voltage is, the larger the

detection voltage of actual drain peak current is,

compared to VOCP. Thus, the peak current has some

variation depending on the AC input voltage in OCP

state. In order to reduce the variation of peak current in

OCP state, the IC incorporates a built-in Input

Compensation function.

The Input Compensation Function is the function of

correction of OCP threshold voltage depending with AC

input voltage, as shown in Figure 9-15. When AC input

voltage is low (ON Duty is broad), the OCP threshold

voltage is controlled to become high. The difference of

peak drain current become small compared with the case

where the AC input voltage is high (ON Duty is narrow).

The compensation signal depends on ON Duty. The

relation between the ON Duty and the OCP threshold

voltage after compensation VOCP' is expressed as

Equation (6). When ON Duty is broader than 36 %, the

VOCP' becomes a constant value VOCP(H) = 0.9 V

ON Duty (%)

DDPC

VOCP(L)

DMAX

100

VOCP(H)

0.5

1.0

OCP Threshold Voltage after

compensation, VOCP'

Figure 9-15. Relationship between ON Duty and Drain

Current Limit after Compensation

ONTime

DPCV

'V )L(OCP

OCP

×+

)AVG(OSC

)

L(OCP

ONDuty

DPC

V×+=

(6)

where,

VOCP(L): OCP Threshold Voltage at Zero ON Duty

DPC: OCP Compensation Coefficient

ONTime: On-time of power MOSFET

ONDuty: On duty of power MOSFET

fOSC(AVG): Average PWM Switching Frequency

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9.10 Overload Protection Function (OLP)

Figure 9-16 shows the FB/OLP pin peripheral circuit,

and Figure 9-17 shows each waveform for OLP

operation. When the peak drain current of ID is limited

by OCP operation, the output voltage, VOUT, decreases

and the feedback current from the secondary

photo-coupler becomes zero. Thus, the feedback current,

IFB, charges C3 connected to the FB/OLP pin and the

FB/OLP pin voltage increases. When the FB/OLP pin

voltage increases to VFB(OLP) = 8.1 V or more for the

OLP delay time, tOLP = 68 ms or more, the OLP function

is activated, the IC stops switching operation.

During OLP operation, Bias Assist Function is

disabled. Thus, VCC pin voltage decreases to VCC(OFF),

the control circuit stops operation. After that, the IC

reverts to the initial state by UVLO circuit, and the IC

starts operation when VCC pin voltage increases to

VCC(ON) by startup current. Thus the intermittent

operation by UVLO is repeated in OLP state.

This intermittent operation reduces the stress of parts

such as power MOSFET and secondary side rectifier

diode. In addition, this operation reduces power

consumption because the switching period in this

intermittent operation is short compared with oscillation

stop period. When the abnormal condition is removed,

the IC returns to normal operation automatically.

PC1

FB/OLP

VCC

GND

D2 R2

Figure 9-16. FB/OLP Pin Peripheral Circuit

VCC pin voltage

FB/OLP pin voltage

Drain current,

CC(OFF)

FB(OLP)

OLP

CC(ON)

Non-switching interval

OLP

Figure 9-17. OLP Operational Waveforms

9.11 Overvoltage Protection (OVP)

When a voltage between VCC pin and GND pin

increases to VCC(OVP) = 29 V or more, OVP function is

activated, the IC stops switching operation at the latched

state. In order to keep the latched state, when VCC pin

voltage decreases to VCC(BIAS), the bias assist function is

activated and VCC pin voltage is kept to over the

VCC(OFF).

Releasing the latched state is done by turning off the

input voltage and by dropping the VCC pin voltage

below VCC(OFF), or by dropping the BR pin voltage below

VBR(OUT).

In case the VCC pin voltage is provided by using

auxiliary winding of transformer, the overvoltage

conditions such as output voltage detection circuit open

can be detected because the VCC pin voltage is

proportional to output voltage. The approximate value of

output voltage VOUT(OVP) in OVP condition is calculated

by using Equation (7).

×=

)NORMAL(CC

)NORMAL(OUT

OUT(OVP)

29 (V) (7)

where,

VOUT(NORMAL): Output voltage in normal operation

VCC(NORMAL): VCC pin voltage in normal operation

9.12 Thermal Shutdown Function (TSD)

When the temperature of control circuit increases to

Tj(TSD) = 135 °C (min.) or more, Thermal Shutdown

function (TSD) is activated, the IC stops switching

operation at the latched state. In order to keep the

latched state, when VCC pin voltage decreases to

VCC(BIAS), the bias assist function is activated and VCC

pin voltage is kept to over the VCC(OFF).

Releasing the latched state is done by turning off the

input voltage and by dropping the VCC pin voltage

below VCC(OFF), or by dropping the BR pin voltage below

VBR(OUT).

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10. Design Notes

10.1 External Components

Take care to use properly rated, including derating as

necessary and proper type of components.

VAC

C6 R1

BR1

PC1

OCP

CRD clamp snubber

1234

D/ST D/ST

S/OCP FB/OLP

GND

VCC

8 7 5

C(RC) damper snubber

Figure 10-1. The IC Peripheral Circuit

• Input and Output Electrolytic Capacitor

Apply proper derating to ripple current, voltage, and

temperature rise. Use of high ripple current and low

impedance types, designed for switch mode power

supplies, is recommended.

• S/OCP Pin Peripheral Circuit

In Figure 10-1, ROCP is the resistor for the current

detection. A high frequency switching current flows

to ROCP, and may cause poor operation if a high

inductance resistor is used. Choose a low inductance

and high surge-tolerant type.

• BR pin peripheral circuit

Because RA and RB (see Figure 10-1) are applied high

voltage and are high resistance, the following should be

considered according to the requirement of the

application:

▫ Select a resistor designed against electromigration,

▫ Use a combination of resistors in series for that to

reduce each applied voltage

See the section 9.8 about the AC input voltage

detection function and the components around BR pin.

When the detection resistor (RA, RB, RC) value is

decreased and the C4 value is increased to prevent

unstable operation resulting from noise at the BR pin,

pay attention to the low efficiency and the slow

response of BR pin.

• FB/OLP Pin Peripheral Circuit

C3 is for high frequency noise reduction and phase

compensation, and should be connected close to these

pins. The value of C3 is recommended to be about

2200 pF to 0.01µF, and should be selected based on

actual operation in the application.

• VCC Pin Peripheral Circuit

The value of C2 in Figure 10-1 is generally

recommended to be 10µ to 47μF (refer to Section 9.1

Startup Operation, because the startup time is

determined by the value of C2).

In actual power supply circuits, there are cases in

which the VCC pin voltage fluctuates in proportion to

the output current, IOUT (see Figure 10-2), and the

Overvoltage Protection function (OVP) on the VCC

pin may be activated. This happens because C2 is

charged to a peak voltage on the auxiliary winding D,

which is caused by the transient surge voltage coupled

from the primary winding when the power MOSFET

turns off.

For alleviating C2 peak charging, it is effective to add

some value R2, of several tenths of ohms to several

ohms, in series with D2 (see Figure 10-1). The

optimal value of R2 should be determined using a

transformer matching what will be used in the actual

application, because the variation of the auxiliary

winding voltage is affected by the transformer

structural design.

Without R2

With R2

VCC pin voltage

Output current, I

OUT

Figure 10-2. Variation of VCC Pin Voltage and Power

• Snubber Circuit

In case the surge voltage of VDS is large, the circuit

should be added as follows (see Figure 10-1);

・ A clamp snubber circuit of a capacitor-resistor-

diode (CRD) combination should be added on the

primary winding P.

・ A damper snubber circuit of a capacitor (C) or a

resistor-capacitor (RC) combination should be

added between the D/ST pin and the S/OCP pin.

In case the damper snubber circuit is added, this

components should be connected near D/ST pin

and S/OCP pin.

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• Peripheral circuit of secondary side shunt regulator

Figure 10-3 shows the secondary side detection circuit

with the standard shunt regulator IC (U51).

C52 and R53 are for phase compensation. The value

of C52 and R53 are recommended to be around

0.047μF to 0.47μF and 4.7 kΩ to 470 kΩ, respectively.

They should be selected based on actual operation in

the application.

D51

C51

R51

R52

U51

R54

R56

C52

PC1

R53

R55

L51

C53

VOUT

(-)

(+)

Figure 10-3. Peripheral Circuit of Secondary Side

Shunt Regulator (U51)

• Transformer

Apply proper design margin to core temperature rise

by core loss and copper loss.

Because the switching currents contain high

frequency currents, the skin effect may become a

consideration.

Choose a suitable wire gauge in consideration of the

RMS current and a current density of 4 to 6 A/mm2.

If measures to further reduce temperature are still

necessary, the following should be considered to

increase the total surface area of the wiring:

▫ Increase the number of wires in parallel.

▫ Use litz wires.

▫ Thicken the wire gauge.

In the following cases, the surge of VCC pin

voltage becomes high.

▫ The surge voltage of primary main winding, P, is

high (low output voltage and high output current

power supply designs)

▫ The winding structure of auxiliary winding, D, is

susceptible to the noise of winding P.

When the surge voltage of winding D is high, the

VCC pin voltage increases and the Overvoltage

Protection function (OVP) may be activated. In

transformer design, the following should be

considered;

▫ The coupling of the winding P and the secondary

output winding S should be maximized to reduce the

leakage inductance.

▫ The coupling of the winding D and the winding S

should be maximized.

▫ The coupling of the winding D and the winding P

should be minimized.

In the case of multi-output power supply, the

coupling of the secondary-side stabilized output

winding, S1, and the others (S2, S3…) should be

maximized to improve the line-regulation of those

outputs.

Figure 10-4 shows the winding structural examples

of two outputs.

Winding structural example (a):

S1 is sandwiched between P1 and P2 to

maximize the coupling of them for surge

reduction of P1 and P2.

D is placed far from P1 and P2 to minimize the

coupling to the primary for the surge reduction of

Winding structural example (b)

P1 and P2 are placed close to S1 to maximize the

coupling of S1 for surge reduction of P1 and P2.

D and S2 are sandwiched by S1 to maximize the

coupling of D and S1, and that of S1 and S2.

This structure reduces the surge of D, and

improves the line-regulation of outputs.

Margin tape

P1 S1 P2 S2 D

P1 S1 D S2 S1 P2

Winding structural example (a)

Winding structural example (b)

Bobbin Bobbin

Figure 10-4. Winding Structural Examples

10.2 PCB Trace Layout and Component

Placement

Since the PCB circuit trace design and the component

layout significantly affects operation, EMI noise, and

power dissipation, the high frequency PCB trace should

be low impedance with small loop and wide trace.

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In addition, the ground traces affect radiated EMI noise,

and wide, short traces should be taken into account.

Figure 10-5 shows the circuit design example.

(1) Main Circuit Trace Layout

This is the main trace containing switching currents,

and thus it should be as wide trace and small loop as

possible.

If C1 and the IC are distant from each other, placing

a capacitor such as film capacitor (about 0.1 μF and

with proper voltage rating) close to the transformer

or the IC is recommended to reduce impedance of

the high frequency current loop.

(2) Control Ground Trace Layout

Since the operation of IC may be affected from the

large current of the main trace that flows in control

ground trace, the control ground trace should be

separated from main trace and connected at a single

point grounding of point A in Figure 10-5 as close to

the ROCP pin as possible.

(3) VCC Trace Layout

This is the trace for supplying power to the IC, and

thus it should be as small loop as possible. If C2 and

the IC are distant from each other, placing a

capacitor such as film capacitor Cf (about 0.1 μF to

1.0 μF) close to the VCC pin and the GND pin is

recommended.

(4) ROCP Trace Layout

ROCP should be placed as close as possible to the

S/OCP pin. The connection between the power

ground of the main trace and the IC ground should

be at a single point ground (point A in Figure 10-5)

which is close to the base of ROCP.

(5) Peripheral components of the IC

The components for control connected to the IC

should be placed as close as possible to the IC, and

should be connected as short as possible to the each

pin.

(6) Secondary Rectifier Smoothing Circuit Trace

Layout:

This is the trace of the rectifier smoothing loop,

carrying the switching current, and thus it should be

as wide trace and small loop as possible. If this trace

is thin and long, inductance resulting from the loop

may increase surge voltage at turning off the power

MOSFET. Proper rectifier smoothing trace layout

helps to increase margin against the power MOSFET

breakdown voltage, and reduces stress on the clamp

snubber circuit and losses in it.

(7) Thermal Considerations

Because the power MOSFET has a positive thermal

coefficient of RDS(ON), consider it in thermal design.

Since the copper area under the IC and the D/ST pin

trace act as a heatsink, its traces should be as wide as

possible.

C1 C6 R1

D2 R2

C51

PC1

OCP

1 2 3 4

D/ST

S/OCP FB/OLP

GND

8 7 5

STR-A6000

D51

D/ST VCC

(1)Main trace should be wide

trace and small loop (6)Main trace of secondary side should

be wide trace and small loop

(2) Control GND trace should be connected at a

single point as close to the R

OCP

as possible

(3) Loop of the power

supply should be small

(4)R

OCP

should be as close to S/OCP pin as

possible.

(7)Trace of D/ST pin should be

wide for heat release

(5)The components connected to

the IC should be as close to the

IC as possible, and should be

connected as short as possible

Figure 10-5. Peripheral Circuit Example Around the IC

STR-A6000 Series

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 24

Mar. 13, 2015 http://www.sanken-ele.co.jp/en

11. Pattern Layout Example

The following show the PCB pattern layout example and the schematic of circuit using STR-A6000 series.

The above circuit symbols correspond to these of Figure 11-1.Only the parts in the schematic are used. Other parts

in PCB are leaved open.

Figure 11-1. PCB Circuit Trace Layout Example

CN1

D51

R52

U51

PC1

L51

C52 R53

C1 TH1

1 2 4

D/ST D/ST

S/OCP FB/OLP

VCC

8 7 5

STR-A6000

GND

OUT2(+)

C10

C11

D8 R3

D52

C51 C53

C55

R51 R54

R55

R56

R57

R58

R59

R60 R61

JW51 JW52

JW2

JW3

CP1

C54

C57

CN51

JW4

OUT2(-)

OUT1(+)

OUT1(-)

OUT3(+)

D21

C21 R21

OUT3(-)

IN OUT

GND

U21

C22

OUT4(+)

D31

C31 R31

OUT4(-)

C32

JW31

JW21 CN21

CN31

L52

C56

C12

C13

JW6

JW7

JW8

JW9

JW10

JW11

JW53

JW54

Figure 11-2. Circuit Schematic for PCB Circuit Trace Layout

STR-A6000 Series

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 25

Mar. 13, 2015 http://www.sanken-ele.co.jp/en

12. Reference Design of Power Supply

As an example, the following show the power supply specification, the circuit schematic, the bill of materials, and

the transformer specification.

- Power Supply Specification

STR-A6059H

Input voltage

AC85V to AC265V

Maximum output power

7.5W

Output voltage

Output current

1.5A (max.)

- Circuit Schematic

T1 D51

R52

U51

PC1

L51

C52

R53

TH1

1 2 4

D/ST D/ST

BRS/OCP FB/OLP

VCC

8 7 5

STR-A6000

GND

5V/1.5A

D6 R2

C51 C53

R51 R54

R55

R56

R57

PC1

C55

TC_STR-A6000_4_R1

VOUT(+)

VOUT(-)

- Bill of Materials

Symbol Part Type Ratings(1)

Recommended

Sanken Parts

Symbol Part Type Ratings(1)

Recommended

Sanken Parts

F1 Fuse AC250V, 3A R4

(3)

Metal oxide 330kΩ, 1W

(2)

CM inductor 3.3mH R7 General 330kΩ

(2)

Inductor

470μH

(3)

General

2.2MΩ

TH1

(2)

NTC thermistor

Short

(3)

General

2.2MΩ

General

600V, 1A

EM01A

PC1

Photo-coupler

PC123 or equiv

General

600V, 1A

EM01A

－

STR-A6059H

D3 General 600V, 1A EM01A T1 Transformer

See

the specification

D4 General 600V, 1A EM01A L51 Inductor 5μH

Fast recovery

1000V, 0.5A

EG01C

D51

Schottky

90V, 4A

FMB-G19L

Fast recovery

200V, 1A

AL01Z

C51

Electrolytic

680μF, 10V

(2)

Film, X2

0.047μF, 275V

C52

(2)

Ceramic

0.1μF, 50V

Electrolytic

10μF, 400V

C53

Electrolytic

330µF, 10V

Electrolytic

10μF, 400V

C55

(2)

Ceramic

1000pF, 1kV

Ceramic

1000pF, 630V

R51

General

220Ω

C5 Electrolytic 22μF, 50V R52 General 1.5kΩ

(2)

Ceramic

0.01μF

R53

(2)

General

22kΩ

(2)

Ceramic

1000pF

R54

General, 1%

Short

(2)

Ceramic

Open

R55

General, 1%

10kΩ

Ceramic, Y1

2200pF, 250V

R56

General, 1%

10kΩ

(2)

General

Open

R57

General

Open

R2 (2) General 4.7Ω U51 Shunt regulator

REF

=2.5V

TL431 or equiv

R3 General 1.5Ω, 1/2W

(1) Unless otherwise specified, the voltage rating of capacitor is 50 V or less and the power rating of resistor is 1/8 W or less.

(2) It is necessary to be adjusted based on actual operation in the application.

(3) Resistors applied high DC voltage and of high resistance are recommended to select resistors designed against electromigration or use

combinations of resistors in series for that to reduce each applied voltage, according to the requirement of the application.

STR-A6000 Series

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 26

Mar. 13, 2015 http://www.sanken-ele.co.jp/en

- Transformer Specification

▫ Primary Inductance, LP ：704 μH

▫ Core Size ：EI-16

▫ Al-value ：132 nH/N2 (Center gap of about 0.26 mm)

▫ Winding Specification

Winding

Symbol

Number of Turns (T)

Wire Diameter (mm)

Construction

Primary Winding P1 73 2UEW-φ0.18

Two-layer,

solenoid winding

Auxiliary Winding D 17 2UEW-φ0.18×2

Single-layer,

solenoid winding

Output Winding 1 S1 6 TEX-φ0.3×2

Single-layer,

solenoid winding

Output Winding 2 S2 6 TEX-φ0.3×2

Single-layer,

solenoid winding

Bobbin D

VDC

D/ST

VCC

GND

VOUT(+)

: Start at this pin

Cross-section view

VOUT(-)

STR-A6000 Series

STR-A6000-DSJ Rev.4.4 SANKEN ELECTRIC CO., LTD. 27

Mar. 13, 2015 http://www.sanken-ele.co.jp/en

Important Notes

● All data, illustrations, graphs, tables and any other information included in this document as to Sanken’s products listed herein (the

“Sanken Products”) are current as of the date this document is issued. All contents in this document are subject to any change

without notice due to improvement of the Sanken Products, etc. Please make sure to confirm with a Sanken sales representative

that the contents set forth in this document reflect the latest revisions before use.

● The Sanken Products are intended for use as components of general purpose electronic equipment or apparatus (such as home

appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Prior to use of the Sanken Products,

please put your signature, or affix your name and seal, on the specification documents of the Sanken Products and return them to

Sanken. When considering use of the Sanken Products for any applications that require higher reliability (such as transportation

equipment and its control systems, traffic signal control systems or equipment, disaster/crime alarm systems, various safety

devices, etc.), you must contact a Sanken sales representative to discuss the suitability of such use and put your signature, or affix

your name and seal, on the specification documents of the Sanken Products and return them to Sanken, prior to the use of the

Sanken Products. The Sanken Products are not intended for use in any applications that require extremely high reliability such as:

aerospace equipment; nuclear power control systems; and medical equipment or systems, whose failure or malfunction may result

in death or serious injury to people, i.e., medical devices in Class III or a higher class as defined by relevant laws of Japan

(collectively, the “Specific Applications”). Sanken assumes no liability or responsibility whatsoever for any and all damages and

losses that may be suffered by you, users or any third party, resulting from the use of the Sanken Products in the Specific

Applications or in manner not in compliance with the instructions set forth herein.

● In the event of using the Sanken Products by either (i) combining other products or materials therewith or (ii) physically,

chemically or otherwise processing or treating the same, you must duly consider all possible risks that may result from all such

uses in advance and proceed therewith at your own responsibility.

● Although Sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely avoid the

occurrence of any failure or defect in semiconductor products at a certain rate. You must take, at your own responsibility,

preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which

the Sanken Products are used, upon due consideration of a failure occurrence rate or derating, etc., in order not to cause any human

injury or death, fire accident or social harm which may result from any failure or malfunction of the Sanken Products. Please refer

to the relevant specification documents and Sanken’s official website in relation to derating.

● No anti-radioactive ray design has been adopted for the Sanken Products.

● No contents in this document can be transcribed or copied without Sanken’s prior written consent.

● The circuit constant, operation examples, circuit examples, pattern layout examples, design examples, recommended examples, all

information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of reference of

use of the Sanken Products and Sanken assumes no responsibility whatsoever for any and all damages and losses that may be

suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property

rights and any other rights of you, users or any third party, resulting from the foregoing.

● All technical information described in this document (the “Technical Information”) is presented for the sole purpose of reference

of use of the Sanken Products and no license, express, implied or otherwise, is granted hereby under any intellectual property

rights or any other rights of Sanken.

● Unless otherwise agreed in writing between Sanken and you, Sanken makes no warranty of any kind, whether express or implied,

including, without limitation, any warranty (i) as to the quality or performance of the Sanken Products (such as implied warranty

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delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course

of dealing or usage of trade, and (iv) as to any information contained in this document (including its accuracy, usefulness, or

reliability).

● In the event of using the Sanken Products, you must use the same after carefully examining all applicable environmental laws and

regulations that regulate the inclusion or use of any particular controlled substances, including, but not limited to, the EU RoHS

Directive, so as to be in strict compliance with such applicable laws and regulations.

● You must not use the Sanken Products or the Technical Information for the purpose of any military applications or use, including

but not limited to the development of weapons of mass destruction. In the event of exporting the Sanken Products or the Technical

Information, or providing them for non-residents, you must comply with all applicable export control laws and regulations in each

country including the U.S. Export Administration Regulations (EAR) and the Foreign Exchange and Foreign Trade Act of Japan,

and follow the procedures required by such applicable laws and regulations.

● Sanken assumes no responsibility for any troubles, which may occur during the transportation of the Sanken Products including

the falling thereof, out of Sanken’s distribution network.

● Although Sanken has prepared this document with its due care to pursue the accuracy thereof, Sanken does not warrant that it is

error free and Sanken assumes no liability whatsoever for any and all damages and losses which may be suffered by you resulting

from any possible errors or omissions in connection with the contents included herein.

● Please refer to the relevant specification documents in relation to particular precautions when using the Sanken Products, and refer

to our official website in relation to general instructions and directions for using the Sanken Products.

● All rights and title in and to any specific trademark or tradename belong to Sanken or such original right holder(s).

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