US6K2 Datasheet. Www.s Manuals.com. Rohm

User Manual: Marking of electronic components, SMD Codes K0, K0-***, K01, K02, K0355, K0389, K0390, K0391, K0392, K0393, K0394, K0395, K0396, K0397, K03B7, K03B8, K03B9, K04, K06, K0=***. Datasheets BST86, EM6K6, QS5K2, QS6K1, RJK0355DPA, RJK0389DPA, RJK0390DPA, RJK0391DPA, RJK0392DPA, RJK0393DPA, RJK0394DPA, RJK0395DPA, RJK0396DPA, RJK0397DPA, RJK03B7DPA, RJK03B8DPA, RJK03B9DPA, RT9818C-29GVL, RT9818C-29PVL, US6K1, US6K2, US6K4.

Open the PDF directly: View PDF .
Page Count: 5

US6K2

Transistors

Rev.B 1/3

4V Drive

Nch+Nch

MOSFET

US6K2

zStructure zDimensions (Unit : mm)

Silicon N-channel MOSFET

zFeatures

1) Two Nch MOSFETs are put in TUMT6 package.

2) High-speed switching, Low On-resistance.

3) 4V drive.

zApplications

Switching

zPackaging specifications zInner circuit

Package

Code

Taping

Basic ordering unit (pieces)

US6K2

TR

3000

Type

zAbsolute maximum ratings (Ta=25°C)

<It is the same ratings for the Tr1 and Tr2>

∗1

∗2

∗1

Parameter

VVDSS

Symbol

VVGSS

AID

AIDP

AIS

AISP

W / TOTAL

PD

°CTch

°CTstg

Limits Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Source current

(Body diode)

30

150

−55 to +150

20

±1.4

±5.6

0.6

5.6

1.0

W / ELEMENT0.7

zThermal resistance

Parameter

°C/W / TOTAL

Rth(ch-a)

Symbol Limits Unit

Channel to ambient 125

°C/W / ELEMENT179

∗ Mounted on a ceramic board

∗

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Drain

(4) Tr2 Source

(5) Tr2 Gate

(6) Tr1 Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2∗2

∗1

∗1

(1)

(6)

(3)

(4)

(2)

(5)

TUMT6

Abbreviated symbol : K02

0.2Max.

US6K2

Transistors

Rev.B 2/3

zElectrical characteristics (Ta=25°C)

<It is the same characteristics for the Tr1 and Tr2>

Parameter Symbol

IGSS

Yfs

Min.

−

Typ. Max. Unit Conditions

V(BR) DSS

IDSS

VGS (th)

RDS (on)

C

iss

Coss

Crss

td (on)

tr

td (off)

tf

Qg

Qgs

Qgd

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

∗Pulsed

−10 µAV

GS=20V, VDS=0V

VDD 15V, VGS= 5V

30 −−VI

D= 1mA, VGS=0V

−−1µAV

DS= 30V, VGS=0V

1.0 −2.5 V VDS= 10V, ID= 1mA

−170 240 ID= 1.4A, VGS= 10V

−250 350 mΩ

mΩ

mΩ

ID= 1.4A, VGS= 4.5V

−270 380 ID= 1.4A, VGS= 4V

1−−SV

DS= 10V, ID= 1.4A

−70 −pF VDS= 10V

−15

12

−pF VGS=0V

−

6

−pF f=1MHz

−

6

−ns

−

13

−ns

−

8

−ns

−

1.4

−ns

−

0.6

2.0 nC

−

0.3

−nC ID= 1.4A

−−nC RL= 11Ω, RG= 10Ω

VDD 15V

I

D

= 0.7A

V

GS

= 10V

R

L

= 21Ω

R

G

=10Ω

zBody diode characteristics (Source-drain) (Ta=25°C)

<It is the same characteristics for the Tr1 and Tr2>

V

SD

−−1.2 V I

S

= 0.6A, V

GS

=0VForward voltage

Parameter Symbol Min. Typ. Max. Unit Conditions

US6K2

Transistors

Rev.B 3/3

GATE-SOURCE VOLTAGE : V

GS

(V)

0.001

0.01

0.1

1

10

0.5 1.0 2.01.5 4.02.5 3.0 3.5

DRAIN CURRENT : I

D

(A)

Fig.4 Typical Transfer Characteristics

V

DS

=10V

Pulsed

Ta=125°C

75°C

25°C

−25°C

SOURCE-DRAIN VOLTAGE : V

SD

(V)

0.0

0.01

0.1

1

10

0.5 1.0 1.5

SOURCE CURRENT : I

S

(A)

Fig.6 Source Current vs.

Source-Drain Voltage

V

GS

=0V

Pulsed

Ta=125°C

75°C

25°C

−25°C

DRAIN CURRENT : ID (A)

0.01

1

10

100

1000

0.1 1 10

SWITCHING TIME : t (ns)

Fig.2 Switching Characteristics

Ta=25°C

V

DD

=15V

V

GS

=10V

R

G

=10Ω

Pulsed

tf

td(off)

td(on)

tr

GATE-SOURCE VOLTAGE : V

GS

(V)

0

0

100

700

800

900

600

200

300

400

500

1000

210468

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS

(mΩ)

Fig.5 Static Drain-Source

On-State Resistance vs.

Gate source Voltage

Ta=25°C

Pulsed

I

D

=1.4A

I

D

=0.7A

zElectrical characteristics curves

DRAIN-SOURCE VOLTAGE : VDS (V)

0.01

1

10

100

1000

0.1 1 10 100

CAPACITANCE : C (pF)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

Ta=25°C

f=1MHz

V

GS

=0V

Ciss

Coss

Crss

TOTAL GATE CHARGE : Qg (nC)

0

0

1

2

3

4

5

10

6

7

8

9

123

GATE-SOURCE VOLTAGE : V

GS

(V)

Fig.3 Dynamic Input Characteristics

Ta=25°C

VDD=15V

ID=1.4A

RG=10Ω

Pulsed

DRAIN CURRENT : I

D

(A)

0.01

0.1

10

100

1000

10000

110

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS (on)

(mΩ)

Fig.7 Static Drain-Source

On-State Resistance

vs. Drain Current ( Ι )

V

GS

=10V

Pulsed

Ta=125°C

75°C

25°C

−25°C

DRAIN CURRENT : I

D

(A)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS (on)

(mΩ)

Fig.8 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙ )

0.01

0.1

10

100

1000

10000

110

V

GS

=4.5V

Pulsed

Ta=125°C

75°C

25°C

−25°C

DRAIN CURRENT : I

D

(A)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS (on)

(mΩ)

Fig.9 Static Drain-Source

On-State Resistance

vs. Drain Current ( ΙΙΙ )

0.01

0.1

10

100

1000

10000

110

V

GS

=4V

Pulsed

Ta=125°C

75°C

25°C

−25°C

Appendix

Appendix1-Rev1.1

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

www.s-manuals.com