UT9435HZ Datasheet. Www.s Manuals.com. 20150422 Utc
User Manual: Marking of electronic components, SMD Codes 35, 35**, 3526M-H, 3526M-L, 3537, 358, 35G, 35HZG, 35T. Datasheets DTA124XE, DTA124XKA, DTA124XM, DTA124XUA, IR3537MTR, LM3526M-H, LM3526M-L, LM3526MX-H, LM3526MX-L, LM358DMR2G, MMBTA45G, STN6335, TK71535AS, UDZS13B, UT9435HZG-AE3-R, UT9435HZG-AG6-R.
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UNISONIC TECHNOLOGIES CO., LTD
UT9435HZ Power MOSFET
www.unisonic.com.tw 1 of 4
Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-740. F
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTC UT9435HZ is a P-channel enhancement power
MOSFET. It has low gate charge, fast switching speed and
perfect RDS(ON).
This device is generally applied in power management
applications.
SYMBOL
ORDERING INFORMATION
Pin Assignment
Ordering Number Package 12345 6 7 8 Packing
UT9435HZG-AA3-R SOT-223
SGD --
- - -
Tape Reel
UT9435HZG-AE3-R SOT-23
SGD --
- - -
Tape Reel
UT9435HZG-AG6-R SOT-26
DDGSD
D - - Tape Reel
UT9435HZG-S08-R SOP-8
SSSGD
D D D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
UT9435HZ Power MOSFET
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MARKING
SOT-223 SOT-23
SOT-26 SOP-8
UT9435HZ Power MOSFET
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ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain to Source Voltage VDSS -30 V
Gate to Source Voltage VGSS ±20 V
Continuous Drain Current (Note 3) ID ±5.3 A
Pulsed Drain Current (Note 1, 2) IDM ±20 A
SOT-223 2.5 W
SOT-23/ SOT-26 0.38 W
Power Dissipation
SOP-8
PD
2.5 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
SOT-23/SOT-26 325 °C/W
Junction to Ambient SOT-223/SOP-8 θJA 50 (Note 3) °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V
GS=0V, ID=-250µA -30 V
Drain-Source Leakage Current IDSS V
DS=-30V,VGS=0V -1 µA
Gate-Source Leakage Current IGSS V
DS=0V ,VGS=±20V ±5 µA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) V
DS=VGS, ID=-250µA -1 -3 V
VGS=-10V,ID=-5.3A 44 55 mΩ
Drain-Source On-State Resistance (Note 2) RDS(ON) VGS=-4.5V, ID=-4.2A 74 135 mΩ
On State Drain Current ID(ON) V
DS=-5V, VGS=-10V -20 V
DYNAMIC PARAMETERS
Input Capacitance CISS 600 pF
Output Capacitance COSS 95 pF
Reverse Transfer Capacitance CRSS
VDS=-15V,VGS=0V,
f=1.0MHz 85 pF
SWITCHING PARAMETERS
Total Gate Charge (Note 2) QG 50 55 nC
Gate-Source Charge QGS 5 nC
Gate-Drain Charge QGD
VDS=-15V,VGS=-10V,
ID=-5.3A 5 nC
Turn-ON Delay Time (Note 2) tD(ON) 33 40 ns
Turn-ON Rise Time tR 31 45 ns
Turn-OFF Delay Time tD(OFF) 122 130 ns
Turn-OFF Fall Time tF
VDD=-15V, ID=-1A,
VGEN=-10V, RG=6Ω,
70 90 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2) VSD V
GS=0V, IS =-5.3A -0.84 -1.3 V
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle ≤2%
3. Surface Mounted on 1in2 copper pad of FR4 board
UT9435HZ Power MOSFET
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TYPICAL CHARACTERISTICS
Drain Current, -ID(µA)
Drain Current, -ID(µA)
Body-Diode Continuous Current, -IS (A)
Drain Current, -ID(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
