NXP Semiconductors QN9080M17 Bluetooth Modular Transmiter User Manual QN9080 001 M17
NXP Semiconductors Bluetooth Modular Transmiter QN9080 001 M17
User-Manual rev2
QN9080-001-M17 Ultra-low power Bluetooth Smart 4.2 SIP Rev. 0.1 — 12 March 2018 1. User Manual General description The QN9080-001-M17 is an ultra-low power, high performance surface mount SIP targeted at Bluetooth Smart applications, enabling users to realize products with minimum time to market and at the lowest cost. They remove the need for expensive and lengthy development of custom RF board designs and test suites. The SIPs use NXP’s QN9080001-M17 wireless microcontroller to provide a comprehensive solution with large memory, high CPU and radio performance and all RF components included. All that is required to develop and manufacture wireless control or sensing products is to connect a power supply and peripherals such as switches, actuators and sensors, considerably simplifying product development. 2. Features and benefits Key features: Bluetooth 4.2 compliant Integrated antenna Integrated 32 MHz and 32.768 kHz crystals Integrated DC-DC circuit 32-bit ARM Cortex-M4F core at 32 MHz 512 kB flash 128 kB RAM TX power: up to +2 dBm RX sensitivity: 94 dBm True single-chip Bluetooth Low Energy (v4.2) SoC solution: Integrated Bluetooth LE radio, protocol stack and application profiles Support central and peripherals roles Support master/slave concurrency Support 16 simultaneous links Support secure connections Support data packet length extension 48-bit unique BD address 94 dBm RX sensitivity TX output power from 20 dBm to +2 dBm Very low power consumption: Single 1.62 V ~3.6 V power supply 1 A power-down mode, to wake up by GPIO 2 A power-down mode, to wake up by 32 kHz sleep timer, RTC and GPIO 3.6 mA RX current at 3 V supply QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 3. 3.4 mA TX current at 0 dBm TX power at 3 V supply Interface: 32 General-Purpose Input/Output (GPIO) pins, with configurable pull-up/pull-down resistors 8 external ADC inputs (shared with GPIO pins) 2 Analog Comparator input pins (share with GPIO pins) Single power supply 1.62 V to 3.6 V Operating temperature range 40 °C to +85 °C 6 9.7 1.11 mm SIP package Applications Ultra-low-power wearable and medical devices with small form factor Very easy pairing with NFC NTAG Energy harvesting with the NTAG will allow to create totally new application scenario the new iOS11 open the NFC reader function, this BLE+NTAG is a perfect match for that 4. Ordering information Table 1. Ordering information Type number QN9080-001-M17 Table 2. Package Name Description Version LFLGA54 SIP SIP in LGA package; body 6 9.7 1.11 mm SOT1910 AA1 Ordering options Type number Device order part number QN9080-001-M17 3322 960 18570 5. Flash/KB Total SRAM/KB Cortex-M4 FSP with FPU USB FS GPIO 512 128 32 Marking QN9080-1-M17 XXXXX XXXXXXXXXXXX EtDYYWWXX Fig 1. QN9080-001-M17 User Manual QN9080-001-M17 package marking All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 2 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP Table 3. Marking code Line number Marking code Line 1 NXP Logo: B&W outline logo Line 2 part ID: QN9080-1-M17 Line 3 XXXXX: is the STR number request; it will not be mention when we will be on production Line 4 XXXXXXXXXXXX: QN batch number Line 5 • • • • • • • E: TSMC t: ASE-K D: RoHS indicator (Dark green) YY: year; last two digits of year code of assembly WW: week code of assembly X: C is the QN9080 mask version X: for SIP before CQS; it will be removed after QN9080-001-M17 SIP has the following top-side marking: Table 4. Device revision table Revision identifier (R) Revision description 001 Initial SIP revision All SIP types have received FCC “Modular Approval”, in compliance with CFR 47 FCC part 15 regulations and in accordance to FCC public notice DA00-1407. The modular approvals notice and test reports are available on request. FCC, IC & Japan ID marking is not mentioned on the package because the device is too small. QN9080-001-M17 FCC ID : XXMQN9080M17 QN9080-001-M17 IC ID: 8764A-QN9080M17 QN9080-001-M17 I7 Japan ID: QN9080-001-M17 User Manual 207-990010 All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 3 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 6. Block diagram Fig 2. QN9080-001-M17 block diagram QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 4 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP Fig 3. QN9080-001-M17 block diagram for customer using external antenna (Harmonic filter to be in ad equacy with customer board) QN9080-001-M17 is not certified with external antenna but only with its internal antenna. Customer using external antenna will have to do new certification. QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 5 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 7. Pinning information 7.1. Pinning Fig 4. QN9080-001-M17 User Manual Pin configuration All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 6 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP GND Fig 5. SIP pin out 7.2. Pin description Table 5. QN9080-001-M17 User Manual Pin description Symbol Pin Type Description PA30 I/O GPIO PA29 I/O GPIO PA28 I/O GPIO PA27 I/O GPIO PA26 I/O GPIO LB I/O antenna connection LB LA I/O antenna connection LA PA25 I/O GPIO PA24 I/O GPIO PA23 10 I/O GPIO PA22 11 I/O GPIO PA21 12 I/O GPIO PA20 13 I/O GPIO PA19 14 I/O GPIO PA18 15 I/O GPIO PA17 16 I/O GPIO All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 7 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP Table 5. QN9080-001-M17 User Manual Pin description …continued Symbol Pin Type Description PA16 17 I/O GPIO PA15 18 I/O GPIO PA14 19 I/O GPIO PA13 20 I/O GPIO CHIP_MODE 21 control the chip into different modes RSTN 22 hardware reset, active low ANT_IN 23 I/O antenna in RF_OUT 24 I/O RF output GND 25 ground PA12 26 I/O GPIO PA11 27 I/O GPIO PA10 28 I/O GPIO PA09 29 I/O GPIO PA08 30 I/O GPIO PA07 31 I/O GPIO PA06 32 I/O GPIO PA05 33 I/O GPIO PA04 34 I/O GPIO PA03 35 I/O GPIO PA02 36 I/O GPIO NTAG_FD 37 field detection VCC 38 power supply NTAG_VCC 39 NTAG power supply VOUT 40 output supply voltage (energy harvesting) GND 41 ground PA01 42 I/O GPIO PA00 43 I/O GPIO PA31 44 I/O GPIO GND 45 ground GND 46 ground GND 47 ground ANT_PIN3 48 ground ANT_PIN1 49 ground ANT_PIN2 50 ground GND 51 ground GND 52 ground GND 53 ground GND 54 ground All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 8 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 7.2.1 Termination of unused pins Table 6 shows how to terminate pins that are not used in the application. In many cases, unused pins should be connected externally or configured correctly by software to minimize the overall power consumption of the part. Unused pins with GPIO function should be configured as outputs set to LOW with their internal pull-up disabled. To configure a GPIO pin as output and drive it LOW, select the GPIO function in the IOCON register, select output in the GPIO DIR register, and write a 0 to the GPIO PORT register for that pin. Disable the pull-up in the pin’s IOCON register. In addition, it is recommended to configure all GPIO pins that are not bonded out on smaller packages as outputs driven LOW with their internal pull-up disabled. Table 6. Pin Default state[1] Recommended termination of unused pins RSTN I; PU the RSTN pin can be left unconnected if the application does not use it. all PAnm I; PU can be left unconnected if driven LOW and configured as GPIO output with pull-up disabled by software CHIP_MODE I; PU can be left unconnected if driven LOW and configured as GPIO output with pull-up disabled by software [1] 7.2.2 I = Input, IA = Inactive (no pull-up/pull-down enabled), PU = Pull-Up enabled. Pin states in different power modes Table 7. Pin states in different power modes Pin Active - Sleep - Power Down modes all PAnm pins As configured in the SYSCON[1]. Default: internal pull-up enabled RSTN Reset function enabled. Default: input, internal pull-up enabled [1] 8. Termination of unused pins Default and programmed pin states are retained in sleep, and power-down mode. Characteristics 8.1. Static characteristics 8.1.1 General operating conditions Table 8. General operating conditions Tamb = 40 °C to +85 °C, unless otherwise specified. Symbol Parameter fclk VCC Min Typ Max Unit clock frequency 32 MHz supply voltage 1.7 3.6 8.1.2 Conditions Power consumption Power measurements in active, sleep, power down modes were performed under the following conditions: QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 9 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP • • • • All peripherals disabled Analog peripherals (ADC/DAC/ACMP/Capacitive Sense) powered down RF off 32 MHz HFRCO powered down Table 9. Static characteristics: Power consumption in active modes Tamb = 40 °C to +85 °C, unless otherwise specified. Symbol Parameter Conditions Min Typ[1] Max Unit 830 A Typ[1][2] Max[3] Unit mA 4.4 mA Max[3] Unit 32 MHz HFXO; DC-DC converter enabled, VCC = 3.0 V supply current ICC CoreMark code executed from Flash CLK_AHB = 16 MHz [2] [1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 °C). [2] Characterized through bench measurements using typical samples. Table 10. Static characteristics: Bluetooth LE power consumption in active modes Tamb = 40 °C to +85 °C, unless otherwise specified. Symbol Parameter Conditions Min 32 MHz HFXO, CLK_AHB = 8 MHz; Transmitter mode: fc = 2440 MHz supply current ICC DC-DC converter enabled, VCC = 3 V TX power = 0 dBm 32 MHz HFXO, CLK_AHB = 8 MHz; Receiver mode: fc = 2440 MHz supply current ICC DC-DC converter enabled, VCC = 3 V 94 dBm RX sensitivity [1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 °C). [2] Characterized through bench measurements using typical samples, with 50 loading on RF port. [3] Guaranteed by characterization, not tested in production. Table 11. Static characteristics: power consumption in Sleep mode and Power-down mode Tamb = 40 °C to +85 °C, unless otherwise specified. Parameter Conditions ICC supply current Sleep mode: all SRAM on, Flash in Standby mode, DC-DC converter enabled, VCC = 3 V 32 MHz HFXO, CLK_AHB = 16 MHz Min Typ[1][2] Symbol 470 A Power-down mode: 32.768 kHz LFXO on, Flash is powered down, DC-DC converter disabled, VCC = 3 V, Tamb = 25 °C 8 KB SRAM powered 2.6 A Power-down mode: all clocks off, Flash is powered down, DC-DC converter disabled, VCC = 3 V, Tamb = 25 °C 8 KB SRAM powered [1] Typical ratings are not guaranteed. Typical values listed are at room temperature (25 °C). [2] Characterized through bench measurements using typical samples. [3] Guaranteed by characterization, not tested in production. QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 A © NXP Semiconductors N.V. 2017. All rights reserved. 10 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 8.2. RF characteristics 8.2.1 Receiver Table 12. Receiver characteristics Tamb = 25 °C; based on characterization; not tested in production. VCC = 3 V; fc = 2440 MHz; BER < 0.1 %. Symbol Parameter Conditions Min Typ Max Unit SRX RX sensitivity low-power mode with DC-to-DC converter 92 dBm Pi(max) maximum input power dBm C/I carrier-to-interference ratio co-channel dB adjacent channel 4 dB 41 dB 41 dB 30 MHz to 2000 MHz 1 dBm 2003 MHz to 2399 MHz 10 dBm 2484 MHz to 2997 MHz 10 dBm 3 GHz to 12.75 GHz 10 dBm at 1 MHz alternate channel at 2 MHz image image rejection sup(oob) out-of-band suppression 8.2.2 Transmitter Table 13. Transmitter characteristics Tamb = 25 °C; based on characterization; not tested in production. VCC = 3 V; fc = 2440 MHz. Symbol Parameter Min Typ Max Unit fo(RF) RF output frequency 2400 2483.5 MHz CS channel separation MHz Po output power 20 +2 dBm Po(RF)step RF output power step dB Po(acc) TX power accuracy 2 +2 dB QN9080-001-M17 User Manual Conditions TX power All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 11 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 8.3. Analog characteristics 8.3.1 BOD Table 14. BOD static characteristics Tamb = 25 °C; based on characterization; not tested in production. Symbol Parameter Conditions Min Typ Max Unit Vth threshold voltage interrupt level 0 assertion 2.05 de-assertion 2.35 1.50 assertion 2.45 de-assertion 2.80 1.85 assertion 2.70 de-assertion 3.10 2.0 assertion 3.05 de-assertion 3.45 2.35 reset level 0 assertion interrupt level 1 reset level 1 assertion interrupt level 2 reset level 2 assertion interrupt level 3 reset level 3 assertion 8.3.2 16-bit ADC characteristics Table 15. 16-bit ADC characteristics Tamb = -40 °C to +85 °C; 1.62 V ? VCC ? 3.6 V; VREFP = VDDA; VSSA = VREFN = GND. ADC calibrated at Tamb = 25 °C. Symbol Parameter Conditions VI input voltage range (VINP - VINN) VREF = 1.2 V Min Typ Max 0.8*VRE Unit F/(PGA_ GAIN*A DC_GAI N) VREF = VCC 0.5*VRE F/(PGA_ GAIN*A DC_GAI N) Ci input capacitance Zi input impedance QN9080-001-M17 User Manual DC signal, PGA enabled 10 pF >10 k All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 12 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP Table 15. 16-bit ADC characteristics …continued Tamb = -40 °C to +85 °C; 1.62 V ? VCC ? 3.6 V; VREFP = VDDA; VSSA = VREFN = GND. ADC calibrated at Tamb = 25 °C. Symbol Parameter Conditions Min Typ Max Unit DC signal, PGA bypassed, 50 k MHz 2 MHz sampling clock fclk(ADC) ADC sampling clock frequency fc conversion rate 31.25 ksps no missing code 22 bits PGA enabled 30 ppm PGA bypassed? 60 ppm after calibration?mV 8 sps conversion rate, 500 kHz sampling clock, gain = 32 200 nV, rms 31.25 ksps conversion rate, 32000 nV, rms integral non-linearity EL(adj) EO offset error gain error Input-Referred noise 2 MHz sampling clock, gain = 1 9. Common-mode rejection at DC dB Power-supply rejection at DC dB Compliance statements and documentation The FCC ID number of the QN9080-001-M17 is XXMQN9080M17 The IC ID number of the QN9080-001-M17 is 8764A-QN9080M17 The Japan ID number of the QN9080-001-M17 is 207-990010 9.1. FCC Statements and documentation This section contains the Federal Communication Commission (FCC) statements and documents. 9.1.1 FCC interference Statements • QN9080-001-M17 User Manual This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one of the following measures: All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 13 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP Reorient or relocate the receiving antenna Increase the separation between the equipment and receiver Connect the equipment into an outlet on a circuit different from that to which the receiver is connected Consult the dealer or an experienced radio/TV technician for help • OEM integrators instructions - The OEM integrators are responsible for ensuring that the end-user has no manual instructions to remove or install SIP - The SIP is limited to installation in mobile or fixed applications, according to CFR 47 Part 2.1091(b) - Separate approval is required for all other operating configurations, including portable configurations with respect to CFR 47 Part 2.1093 and different antenna configurations • User guide mandatory statements • User's instructions of the host device must contain the following statements in addition to operation instructions: * “This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) This device must accept any interference received, including interference that may cause undesired operation” * “Changes or modifications not expressly approved by the party responsible for compliance could void the user's authority to operate the equipment” • FCC RF Exposure requirements - User's instructions of the host device must contain the following instructions in addition to operation instructions: Avoid direct contact to the antenna, or keep it to a 20cm minimum distance while using this equipment. This device must not be collocated or operating in conjunction with another antenna or transmitter. This SIP has been designed to operate etheir with internal antenna or with external antennas having a maximum gain of 2 dBi. Antennas having a gain greater than 2 dBi are strictly prohibited for use with this device. The required antenna impedance is 50 ohms 9.1.2 FCC end product labelling The final ‘end product’ should be labelled in a visible area with the following: “Contains TX FCC ID: XXMQN9080M17 to reflect the SIP being used inside the product. QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 14 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 9.2. Industry Canada Statement This device complies with Industry Canada licence-exempt RSS standard(s). Operation is subject to the following two conditions: (1) this device may not cause interference, and (2) this device must accept any interference, including interference that may cause undesired operation of the device. This device complies with Industry Canada RF radiation exposure limits set forth for general population (uncontrolled exposure). This device must be installed to provide a separation distance of at least 20 cm from all persons and must not be collocated or operating in conjunction with any other antenna or transmitter. Le présent appareil est conforme aux CNR d’Industrie Canada applicables aux appareils radio exempts de licence. L’exploitation est autorisée aux deux conditions suivantes : (1) il ne doit pas produire de brouillage, et (2) l’utilisateur du dispositif doit être prêt à accepter tout brouillage radioélectrique reçu, même si ce brouillage est susceptible de compromettre le fonctionnement du dispositif. Le présent appareil est conforme aux niveaux limites d’exigences d’exposition RF aux personnes définies par Industrie Canada. Cet appareil doit être installé afin d’offrir une distance de séparation d’au moins 20 cm avec l’utilisateur, et ne doit pas être installé à proximité ou être utilisé en conjonction avec une autre antenne ou un autre émetteur. To reduce potential radio interference to other users, the antenna type and its gain should be so chosen that the equivalent isotropic radiated power (e.i.r.p.) is not more than that permitted for successful communication. The Gain of SIP with internal antenna is -3dBi. If customer wants, he can also use the SIP with external antenna with maximum gain of 2dbi. This feature is not certified by NXP and need to be done by the customer. Antennas having a gain greater than 2 dBi are strictly prohibited for use with this device. The required antenna impedance is 50 ohms As long as the above condition is met, further transmitter testing will not be required. However, the OEM integrator is still responsible for testing their end-product for any additional compliance requirements required with this SIP installed (for example, digital device emissions, PC peripheral requirements, etc.). 9.2.1 Industry of Canada end product labelling For Industry Canada purposes the following should be used: “Contains Industry Canada ID IC: 8764A-QN9080M17 9.3. Japanese Radio Certification Statement This equipment has been tested and found to comply with the Japanese Radio Certification Rules 9.3.1 Radio Certification end product labelling For Japanese Radio Certification purposes, the following should be used: “Contains Japanese Radio certificate product: Japan ID number is QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 207-990010 © NXP Semiconductors N.V. 2017. All rights reserved. 15 of 28 QN9080-001-M17 NXP Semiconductors Ultra-Low power Bluetooth Smart 4.2 SIP 10. Footprint and PCB placement 10.1. Fig 6. QN9080-001-M17 User Manual Footprint information for reflow soldering Footprint information for reflow soldering of SIPs All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 16 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 10.2. Reference design for EVB ground plane implementation for QN9080-001M17 Physical View Antenna Clearance On EVB(mm) SIP + Antenna Clearance(mm) 4.65 Scenario #A (Center Edge) 13.7 0.55 6.55 6.55 4 x 4.65 mm 13.7x 6.55 mm 7.5 3.75 13.45 Scenario #B (Corner) 7.5 7.5 x 3.75 mm Fig 7. 13.45 x 7.5 mm QN9080-001-M17 chip antenna / SIP clearance size (top view) QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 17 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 10.2.1 Center edge EVB ground plane design Antenna Function Pin 9.7mm 6 mm Fig 8. QN9080-001-M17 SIP on 36 mm 31 mm EVB design guide - center edge • Do not route signal trace across antenna clearance area • Connect pin 49 to Upper GND, pin 50 to lower GND QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 18 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP Upper GND ≧10.5mm 3.5mm Trace route ≥ 36mm Trace route 0.55mm Trace route ≥ 31mm QN9080-001-M17 SIP on 36 mm 31 mm EVB design guide - center edge - clearance area Units : mm 1.25 2.9 5.5 0.38 Parameter Units : mm 0.55 0.5 0.25 0.5 3.5 Antenna Clearance Area Lower GND Parameter Upper GND Fig 9. Layer 1 Layer 1 Fig 10. QN9080-001-M17 SIP on 36 mm 31 mm EVB design guide - center edge - clearance area layer 1 dimensions QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 19 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP Antenna Clearance Area Parameter Units : mm 4.15 5.5 Layer 2,3,4 Fig 11. QN9080-001-M17 SIP on 36 mm 31 mm EVB design guide - center edge - clearance area layers 2, 3, 4 dimensions QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 20 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 10.2.2 CORNER EVB ground plane design Antenna Function Pin 9.7mm 6 mm Fig 12. QN9080-001-M17 SIP on 36 mm 31 mm EVB design guide - corner • Do not route signal trace across antenna clearance area • Connect pin 48 to antenna trace QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 21 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP Ant. Trace 3.5mm Trace route Trace route Pin48 ≥ 31mm 0.25mm Trace route ≥ 36mm Layer 1 Fig 13. QN9080-001-M17 SIP on 36 mm 31 mm EVB design guide - corner - clearance area Units : mm 0.5 4.34 Parameter 0.5 1.5 1.5 2.9 3.5 0.25 0.25 Parameter Units : mm 6.75 3.5 2.9 Fig 14. QN9080-001-M17 SIP on 36 mm 31 mm EVB design guide - corner - clearance area layer 1 dimensions QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 22 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP Antenna Clearance Area Parameter Units : mm 6.75 2.9 5.5 Layer 2,3,4 Fig 15. QN9080-001-M17 SIP on 36 mm 31 mm EVB design guide - corner - clearance area layers 2, 3, 4 dimensions 10.3. Reflow Profile For reflow soldering, it is requested to follow the reflow profile in Figure 16 , as well as the paste manufacturer’s guidelines on peak flow temperature, soak times, time above liquid and ramp rates. Fig 16. reflow profile of QN9080-001-M17 QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 23 of 28 QN9080-001-M17 NXP Semiconductors Reflow temperature profile parameters: T1 : Minimum preheating temperature= 150°C T2 : Maximum preheating temperature= 180°C T3 : Soldering temperature= 230°C T4 : Peak temperature= 260°C t 1: Preheating duration= (60 – 120) s t2 : Soldering duration= max. 30s t3 : Peak temperature duration= max 10s Table 16. 10.4. Requested solder reflow profile Temperature range (°C) time (s) Peak temperature: 265°C 10s max Heating: 230°C or higher 30s max Preheating: 150°C to 180°C 60s -120s Soldering paste and cleaning NXP does not recommend use of a solder paste that requires the SIP and PCB assembly to be cleaned (rinsed in water) for the following reasons: • Solder flux residues and water can be trapped by the PCB, or components and result in short circuits NXP recommends use of a 'no clean' solder paste for all its SIP products QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 24 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 11. Package outline Fig 17. Package outline QN9080-001-M17 QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 25 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 12. Abbreviations Table 17. QN9080-001-M17 User Manual Abbreviations Acronym Description AHB Advanced High-performance Bus APB Advanced Peripheral Bus API Application Programming Interface DMA Direct Memory Access HFRCO Internal 32 MHz Free-Running Oscillator HFXO External 16/32 MHz crystal oscillator LFRCO Internal 32 kHz Free-Running Oscillator LFXO External 32.768 kHz crystal oscillator GPIO General Purpose Input/Output LSB Least Significant Bit MCU MicroController Unit SPI Serial Peripheral Interface USART Universal Asynchronous Receiver/Transmitter TTL Transistor-Transistor Logic All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 26 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 13. Revision history Table 18. Revision history Document ID Release date Data sheet status Change notice Supersedes QN9080-001-M17 2018-03-15 Objective data sheet Modifications: QN9080-001-M17 User Manual • initial version. All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 27 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 14. Legal information 14.1. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information 14.2. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. I2C-bus — logo is a trademark of NXP Semiconductors N.V. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 28 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 29 of 28 QN9080-001-M17 NXP Semiconductors Ultra-low power Bluetooth Smart 4.2 SIP 16. Tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Ordering information .......................................... 2 Ordering options................................................. 2 Marking code...................................................... 3 Device revision table .......................................... 3 Pin description.................................................... 7 Termination of unused pins ................................. 9 Pin states in different power modes .................... 9 General operating conditions .............................. 9 Static characteristics: Power consumption in active modes .................................................... 10 Table 10. Static characteristics: Bluetooth LE power consumption in active modes ........................... 10 Table 11. Static characteristics: power consumption in Sleep mode and Power-down mode ................. 10 Table 12. Receiver characteristics .................................... 11 Table 13. Transmitter characteristics ................................ 11 Table 14. BOD static characteristics................................. 12 Table 15. 16-bit ADC characteristics ................................ 12 Table 16. Requested solder reflow profile .........................20 Table 17. Abbreviations .................................................... 23 Table 18. Revision history ................................................ 24 17. Figures Fig 1. QN9080-001-M17 package marking ...................... 2 Fig 2. QN9080-001-M17 block diagram ........................... 4 Fig 3. QN9080-001-M17 block diagram for customer using external antenna (Harmonic filter to be in ad equacy with customer board) ............................................. 5 Fig 4. Pin configuration.................................................... 6 Fig 5. SIP pin out ............................................................. 7 Fig 6. Footprint information for reflow soldering of SIPs 14 Fig 7. QN9080-001-M17 chip antenna / SIP clearance size (top view) ............................................................. 14 Fig 8. QN9080-001-M17 SIP on 36 mm ´ 31 mm EVB design guide - center edge.............................................. 15 Fig 9. QN9080-001-M17 SIP on 36 mm ´ 31 mm EVB design guide - center edge - clearance area 16 Fig 10. QN9080-001-M17 SIP on 36 mm ´ 31 mm EVB design guide - center edge - clearance area layer 1 dimensions .......................................................... 16 Fig 11. QN9080-001-M17 SIP on 36 mm ´ 31 mm EVB design guide - center edge - clearance area layers 2, 3, 4 dimensions ............................................... 17 Fig 12. QN9080-001-M17 SIP on 36 mm ´ 31 mm EVB design guide - corner ........................................... 18 Fig 13. QN9080-001-M17 SIP on 36 mm ´ 31 mm EVB design guide - corner - clearance area ................ 19 Fig 14. QN9080-001-M17 SIP on 36 mm ´ 31 mm EVB design guide - corner - clearance area layer 1 dimensions .......................................................... 19 Fig 15. QN9080-001-M17 SIP on 36 mm ´ 31 mm EVB design guide - corner - clearance area layers 2, 3, 4 dimensions .......................................................... 20 Fig 16. reflow profile of QN9080-001-M17 ....................... 20 Fig 17. Package outline QN9080-001-M17 ...................... 22 QN9080-001-M17 User Manual All information provided in this document is subject to legal disclaimers. Rev. 0.1 — 08 Dec 2017 © NXP Semiconductors N.V. 2017. All rights reserved. 30 of 28 NXP Semiconductors QN9080-001-M17 Ultra-low power Bluetooth Smart 4.2 SIP 17. Contents 1. General description ............................................................................................................................................. 1 2. Features and benefits .......................................................................................................................................... 1 3. Applications ......................................................................................................................................................... 2 4. Ordering information ........................................................................................................................................... 2 5. Marking ................................................................................................................................................................ 2 6. Block diagram ...................................................................................................................................................... 4 7. Pinning information ............................................................................................................................................. 6 7.1. Pinning ......................................................................................................................................................... 6 7.2. Pin description ............................................................................................................................................. 7 8. 7.2.1 Termination of unused pins ............................................................................................................................ 9 7.2.2 Pin states in different power modes ................................................................................................................. 9 Characteristics...................................................................................................................................................... 9 8.1. Static characteristics .................................................................................................................................... 9 8.1.1 General operating conditions.......................................................................................................................... 9 8.1.2 Power consumption ..................................................................................................................................... 9 8.2. RF characteristics ....................................................................................................................................... 11 8.2.1 Receiver.................................................................................................................................................... 11 8.2.2 Transmitter ............................................................................................................................................... 11 8.3. 9. Analog characteristics ................................................................................................................................ 12 8.3.1 BOD ......................................................................................................................................................... 12 8.3.2 16-bit ADC characteristics............................................................................................................................. 12 Compliance statements and documentation .................................................................................................... 13 9.1. FCC Statements and documentation ......................................................................................................... 13 9.1.1 FCC interference Statements .................................................................................................................... 13 9.1.2 FCC end product labelling......................................................................................................................... 14 9.2. Industry Canada Statement ....................................................................................................................... 15 9.2.1 9.3. Industry of Canada end product labelling .................................................................................................... 15 Japanese Radio Certification Statement .................................................................................................... 15 9.3.1 10. Radio Certification end product labelling......................................................................................................... 15 Footprint and PCB placement ........................................................................................................................ 16 10.1. Footprint information for reflow soldering ........................................................................................... 16 10.2. Reference design for EVB ground plane implementation for QN9080-001-M17 ................................. 17 10.2.1 Center edge EVB ground plane design ........................................................................................................ 18 10.2.2 CORNER EVB ground plane design............................................................................................................. 21 10.3. Reflow Profile ......................................................................................................................................... 23 NXP Semiconductors 10.4. QN9080-001-M17 Soldering paste and cleaning ................................................................................................................. 24 11. Package outline .............................................................................................................................................. 25 12. Abbreviations ................................................................................................................................................. 26 13. Revision history .............................................................................................................................................. 27 14. Legal information ........................................................................................................................................... 28 14.1. Definitions .............................................................................................................................................. 28 14.2. Disclaimers ............................................................................................................................................. 28 14.3 Trademarks ................................................................................................................................................. 28 15. Contact information....................................................................................................................................... 29 16. Tables ............................................................................................................................................................. 30 17. Figures ............................................................................................................................................................ 30 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2017. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 July 2017 Document identifier: QN9080-001-M17
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