Renesas 2Sk3069 Users Manual Datasheet

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2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1062-1100
(Previous: ADE-208-694I)
Rev.11.00
Sep 07, 2005

Features
• Low on-resistance
RDS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source

Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D

1. Gate
2. Drain
(Flange)
3. Source

G
1

2

3
S

Rev.11.00 Sep 07, 2005 page 1 of 7

2SK3069

Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω

Symbol
VDSS
VGSS
ID

Ratings
60
±20
75
300
75
50
214
100
150
–55 to +150

ID(pulse) Note 1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg

Unit
V
V
A
A
A
A
mJ
W
°C
°C

Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage

Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)

Static drain to source on state
resistance

RDS(on)

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage

|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF

Body–drain diode reverse recovery
time
Note:

4. Pulse test

Rev.11.00 Sep 07, 2005 page 2 of 7

trr

Min
60
—
—
1.0
—
—
50
—
—
—
—
—
—
—
—
—
—
—
—

Typ
—
—
—
—
6.0
8.0
80
7100
1000
280
125
25
25
60
300
520
330
1.05
90

Max
—
±0.1
10
2.5
7.5
12
—
—
—
—
—
—
—
—
—
—
—
—
—

Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns

Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 4
ID = 40 A, VGS = 10 V Note 4
ID = 40 A, VGS = 4 V Note 4
ID = 40 A, VDS = 10 V Note 4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 75 A
VGS = 10 V, ID = 40 A,
RL = 0.75 Ω

IF = 75A, VGS = 0
IF = 75A, VGS = 0
diF/ dt = 50 A/ µs

2SK3069

Main Characteristics
Maximum Safe Operation Area

Power vs. Temperature Derating
1000

Drain Current ID (A)

300
150

100

50

0

50

DC

30
10

1

s(
Op
1
e
sh
(T rati
ot
c = on
)
25
°C
)

Operation in
this area is
limited by RDS(on)

100

150

0.1 Ta = 25°C
0.1 0.3
1

200

3

Typical Output Characteristics

Typical Transfer Characteristics
100

VGS = 10 V
5V
4V

Pulse Test
3.5 V

60

40
3V
20

80

VDS = 10 V
Pulse Test

60

40
25°C

20

75°C

2.5 V
0

2

4

6

8

Tc = –25°C
0

10

1

2

3

4

Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage
vs. Gate to Source Voltage

Static Drain to Source on State
Resistance vs. Drain Current

2.0

Pulse Test

1.6

1.2

0.8

0.4

ID = 50 A
20 A

10 A
4

8

12

16

20

Gate to Source Voltage VGS (V)

Rev.11.00 Sep 07, 2005 page 3 of 7

Static Drain to Source on State Resistance
RDS (on) (mΩ)

Drain to Source Saturation Voltage
VDS (on) (V)

100

Drain to Source Voltage VDS (V)

80

0

30

10

Case Temperature TC (°C)

100

Drain Current ID (A)

100

3

10
µ
0µ s
PW
s
1
m
=
s
10
m
10

0.3

Drain Current ID (A)

Channel Dissipation Pch (W)

200

5

100

Pulse Test
50

20
10

VGS = 4 V

5

10 V

2
1

1

2

5

10

20

50 100 200

Drain Current ID (A)

Forward Transfer Admittance
vs. Drain Current

Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance yfs (S)

Static Drain to Source on State Resistance
RDS (on) (mΩ)

2SK3069

20
Pulse Test
16

20 A
ID = 50 A

12

10 A
4V

8

10, 20, 50 A
VGS = 10 V

4
0
–50

0

50

100

150

200

VDS = 10 V
Pulse Test

100
50

Tc = –25°C

20
10
25°C

5

75°C

2
1
0.5
0.1

0.3

1

3

10

30

100

Drain Current ID (A)

Body to Drain Diode Reverse
Recovery Time

Typical Capacitance
vs. Drain to Source Voltage
30000
VGS = 0
f = 1 MHz

Capacitance C (pF)

500
200
100
50
20

100

0.3

1

3

10

30

Ciss

3000
1000

Coss

300

Crss

10

20

30

40

50

Reverse Drain Current IDR (A)

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Switching Characteristics
20

ID = 75 A
VGS

80

16

VDD = 50 V
25 V
10 V

60 V
DS
40

12

8

VDD = 50 V
25 V
10 V

20

0

10000

100
0

100

80

160

240

4

320

Gate Charge Qg (nc)

Rev.11.00 Sep 07, 2005 page 4 of 7

0
400

1000
td(off)

Switching Time t (ns)

10
0.1

di / dt = 50 A / µs
VGS = 0, Ta = 25°C

Gate to Source Voltage VGS (V)

Reverse Recovery Time trr (ns)

200

Case Temperature TC (°C)

1000

Drain to Source Voltage VDS (V)

500

500
tf

200

tr

100

td(on)

50
20

VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %

10
0.1 0.2 0.5 1

2

5 10 20

Drain Current ID (A)

50 100

2SK3069
Maximum Avalanche Energy vs.
Channel Temperature Derating

Repetitive Avalanche Energy EAR (mJ)

Reverse Drain Current IDR

(A)

Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
80

5V

60
VGS = 0, –5 V

40

20
Pulse Test
0

0.4

0.8

1.2

1.6

Source to Drain Voltage

2.0

250
IAP = 50 A
VDD = 25 V
duty < 0.1 %
Rg > 50 Ω

200

150

100

50
0
25

VSD (V)

50

75

100

125

150

Channel Temperature Tch (°C)

Normalized Transient Thermal Impedance γs (t)

Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1

D=1
0.5

0.3
0.2

0.1

θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.25°C/W, Tc = 25°C

0.1
0.05

PDM

0.02
1
lse
0.0 t pu
o
h
1s

0.03

0.01
10 µ

D=
PW
T

100 µ

1m

100 m

10 m

Pulse Width

1

10

PW (S)

Avalanche Test Circuit
VDS
Monitor

PW
T

Avalanche Waveform

L

EAR =

1
2

• L • IAP2 •

VDSS
VDSS – VDD

IAP
Monitor

V(BR)DSS
IAP

Rg

D. U. T

VDS

VDD

ID
Vin
15 V

50 Ω
0

Rev.11.00 Sep 07, 2005 page 5 of 7

VDD

2SK3069
Switching Time Test Circuit

Switching Time Waveforms
90%

Vout
Monitor

Vin Monitor
D.U.T.
RL

Vin
Vout

Vin
10 V

50 Ω

VDD
= 30 V

10%

10%

90%
td(on)

Rev.11.00 Sep 07, 2005 page 6 of 7

10%

tr

90%
td(off)

tf

2SK3069

Package Dimensions
JEITA Package Code

RENESAS Code

Package Name

MASS[Typ.]

SC-46

PRSS0004AC-A

TO-220AB / TO-220ABV

1.8g

Unit: mm

2.79 ± 0.2

11.5 Max
10.16 ± 0.2
9.5

φ 3.6

1.26 ± 0.15

15.0 ± 0.3

18.5 ± 0.5

1.27

6.4

+0.2
–0.1

8.0

4.44 ± 0.2
+0.1
–0.08

7.8 ± 0.5

0.76 ± 0.1

14.0 ± 0.5

2.7 Max
1.5 Max

0.5 ± 0.1

2.54 ± 0.5

2.54 ± 0.5

Ordering Information
Part Name
2SK3069-E

Quantity
500 pcs

Shipping Container
Box (Sack)

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.

Rev.11.00 Sep 07, 2005 page 7 of 7

Sales Strategic Planning Div.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Keep safety first in your circuit designs!
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0



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Create Date                     : 2005:08:30 06:18:06Z
Modify Date                     : 2005:09:08 15:02:46+09:00
Subject                         : REJ03G1062-1100
Keywords                        : Sep.07.05
Page Count                      : 8
Creation Date                   : 2005:08:30 06:18:06Z
Mod Date                        : 2005:09:08 15:02:46+09:00
Producer                        : Acrobat Distiller 5.0 (Windows)
Author                          : Rev.11.00
Metadata Date                   : 2005:09:08 15:02:46+09:00
Title                           : 2SK3069 Datasheet
Description                     : REJ03G1062-1100
Creator                         : Rev.11.00
Page Layout                     : SinglePage

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