RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
Renesas Electronics Corporation Rev.1.00
REN r01an4808ej0100-rl78g1h-raa604s00 APN 20190621 Application Note
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
Introduction
This document describes an example of transmission and reception characteristics when RF components recommended by our company are changed as a BOM cost reduction method for boards using RL78/G1H (LSI chip for sub-GHz-band wireless communications).
Although it describes RL78/G1H, it is possible to reduce BOM cost of RAA604S00 by the same method.
Note: The contents of this document are provided as an example for reference and do not guarantee the signal quality in systems. When implementing this example into an existing system, thoroughly evaluate the product in the overall system and apply the contents of this document at your own responsibility.
Target Device
RL78/G1H
Contents
1. Overview .................................................................................................................................2
2. Board description.....................................................................................................................2
2.1 Target board ............................................................................................................................................ 2 2.2 Matching circuit........................................................................................................................................ 2
3. Characteristic example of 4-layer board...................................................................................3
3.1 EU Band (863876MHz)........................................................................................................................ 3 3.1.1 TX Power / TX Current .......................................................................................................................... 3 3.1.2 TX Harmonics Response ...................................................................................................................... 3 3.1.3 RX Sensitivity ........................................................................................................................................ 5 3.2 US Band (902928MHz)........................................................................................................................ 6 3.2.1 TX Power / TX Current .......................................................................................................................... 6 3.2.2 TX Harmonics Response ...................................................................................................................... 6 3.2.3 RX Sensitivity ........................................................................................................................................ 8
4. Characteristic example of 2-layer board...................................................................................9
4.1 EU Band (863876MHz)........................................................................................................................ 9 4.1.1 TX Power / TX Current .......................................................................................................................... 9 4.1.2 TX Harmonics Response ...................................................................................................................... 9 4.1.3 RX Sensitivity ...................................................................................................................................... 11 4.2 US Band (902928MHz)...................................................................................................................... 12 4.2.1 TX Power / TX Current ........................................................................................................................ 12 4.2.2 TX Harmonics Response .................................................................................................................... 12 4.2.3 RX Sensitivity ...................................................................................................................................... 13
Revision History ............................................................................................................................15
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 1 of 15
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
1. Overview
When designing a board using RL78 / G1H, a matching circuit is required in the RF port. The matching circuit consists of L (inductor) and C (capacitor), and we recommend using a wire-wound type for the inductor.
In general, wire-wound inductors have high Q value and good RF characteristics can be obtained. On the other hand, it is expensive and not suitable for cost reduction.
This document describes an example of transmission and reception characteristics when the wire-wound inductor is changed to an inexpensive multi-layer inductor.
2. Board description
2.1 Target board
The example characteristics described in this document are measured using the board of the application note in Table 1.
Table 1 Target board
Contents
Application note No,
Title
4-layer board
R01AN3694
Design data of Evaluation board
2-layer board
R01AN4555
Design data of two-layer Evaluation board
2.2 Matching circuit
Figures 1 and Table 2 show the RL78 / G1H matching circuit configuration and components information. It uses 3 wire-wound inductors. We changed them to multi-layer inductors and evaluated the transmission and reception characteristics.
RL78/G1H
Figure 1 Matching circuit configuration
Table2 Components information
Part Description
Before change Part number
Type
After change
Part number
Type
L4
2.2 nH
LQW15AN2N2C10
Wire-wound LQG15HS2N2S02 Multi-layer
L5
5.6 nH
LQW15AN5N6C10
Wire-wound LQG15HS5N6S02 Multi-layer
L6
5.6 nH
LQW15AN5N6C10
Wire-wound LQG15HS5N6S02 Multi-layer
C17
4.7 pF
GRM1552C1H4R7CZ01D Multi-layer
No change
C18
5.6 pF
GRM1552C1H5R6CA01D Multi-layer
No change
C15
3.3 pF
GRM1553C1H3R3CZ01D Multi-layer
No change
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 2 of 15
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
3. Characteristic example of 4-layer board 3.1 EU Band (863876MHz) 3.1.1 TX Power / TX Current
ConditionPower Supply = 3.0V, Temperature = Room, Signal = Sin wave The maximum transmit power is reduced about 0.2dB by the inductor change.
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
The maximum transmit power is reduced 0.2dB.
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 2 TX Power (863.1MHz)
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 3 TX Current (863.1MHz)
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 4 TX Power (869.3MHz)
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 5 TX Current (869.3MHz)
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 6 TX Power (875.5MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 7 TX Current (875.5MHz)
Page 3 of 15
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
3.1.2 TX Harmonics Response
ConditionPower Supply = 3.0V, Temperature = Room, Signal = Sin wave, Gain Setting = 102(dec)
The harmonic response is affected by the inductor change. However, there is enough margin for the standard. The circle in the figure shows the degraded part. The spec line in the figure shows ETSI standard (EN 300 220).
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 8 TX Harmonics_LQW15 (863.1MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 9 TX Harmonics_LQG15 (863.1MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 10 TX Harmonics_LQW15 (869.3MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 11 TX Harmonics_LQG15 (869.3MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 12 TX Harmonics_LQW15 (875.5MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 13 TX Harmonics_LQG15 (875.5MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 4 of 15
RL78/G1H, RAA604S00 3.1.3 RX Sensitivity
Transceiver characteristics when changing RF components
ConditionPower Supply = 3.0V, Temperature = Room, Data Rate = 50kbps(m=0.5)
There is no degradation of RX sensitivity by the inductor change.
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 14 RX Sensitivity_PER (863.1MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 15 RX Sensitivity_BER (863.1MHz)
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 16 RX Sensitivity_PER (869.3MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 17 RX Sensitivity_BER (869.3MHz)
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 18 RX Sensitivity_PER (875.5MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 19 RX Sensitivity_BER (875.5MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 5 of 15
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
3.2 US Band (902928MHz) 3.2.1 TX Power / TX Current
ConditionPower Supply = 3.0V, Temperature = Room, Signal = Sin wave
The maximum transmit power is reduced about 0.3dB by the inductor change.
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
The maximum transmit power is reduced 0.3dB.
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 20 TX Power (902.2MHz)
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 21 TX Current (902.2MHz)
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 22 TX Power (915.0MHz)
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 23 TX Current (915.0MHz)
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 24 TX Power (927.8MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 25 TX Current (927.8MHz)
Page 6 of 15
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
3.2.2 TX Harmonics Response
ConditionPower Supply = 3.0V, Temperature = Room, Signal = Sin wave, Gain Setting = 104(dec)
The harmonic response is affected by the inductor change. However, there is enough margin for the standard. The circle in the figure shows the degraded part. The spec line in the figure shows FCC standard (FCC Part 15.247).
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 26 TX Harmonics_LQW15 (902.2MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 27 TX Harmonics_LQG15 (902.2MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 28 TX Harmonics_LQW15 (915.0MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 29 TX Harmonics_LQG15 (915.0MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 30 TX Harmonics_LQW15 (927.8MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 31 TX Harmonics_LQG15 (927.8MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 7 of 15
RL78/G1H, RAA604S00 3.2.3 RX Sensitivity
Transceiver characteristics when changing RF components
ConditionPower Supply = 3.0V, Temperature = Room, Data Rate = 50kbps(m=1)
There is no degradation of RX sensitivity by the inductor change.
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 32 RX Sensitivity_PER (902.2MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 33 RX Sensitivity_BER (902.2MHz)
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 34 RX Sensitivity_PER (915.0MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 35 RX Sensitivity_BER (915.0MHz)
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 36 RX Sensitivity_PER (927.8MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 37 RX Sensitivity_BER (927.8MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 8 of 15
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
4. Characteristic example of 2-layer board 4.1 EU Band (863876MHz) 4.1.1 TX Power / TX Current
ConditionPower Supply = 3.0V, Temperature = Room, Signal = Sin wave The maximum transmit power is reduced about 0.2dB by the inductor change.
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
The maximum transmit power is reduced 0.2dB.
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 38 TX Power (863.1MHz)
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 39 TX Current (863.1MHz)
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 40 TX Power (869.3MHz)
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 41 TX Current (869.3MHz)
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 42 TX Power (875.5MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 43 TX Current (875.5MHz)
Page 9 of 15
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
4.1.2 TX Harmonics Response
ConditionPower Supply = 3.0V, Temperature = Room, Signal = Sin wave, Gain Setting = 102(dec)
The harmonic response is affected by the inductor change. However, there is enough margin for the standard. The circle in the figure shows the degraded part. The spec line in the figure shows ETSI standard (EN 300 220).
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 44 TX Harmonics_LQW15 (863.1MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 45 TX Harmonics_LQG15 (863.1MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 46 TX Harmonics_LQW15 (869.3MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 47 TX Harmonics_LQG15 (869.3MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 48 TX Harmonics_LQW15 (875.5MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 49 TX Harmonics_LQG15 (875.5MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 10 of 15
RL78/G1H, RAA604S00 4.1.3 RX Sensitivity
Transceiver characteristics when changing RF components
ConditionPower Supply = 3.0V, Temperature = Room, Data Rate = 50kbps(m=0.5)
There is no degradation of RX sensitivity by the inductor change.
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 50 RX Sensitivity_PER (863.1MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 51 RX Sensitivity_BER (863.1MHz)
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 52 RX Sensitivity_PER (869.3MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 53 RX Sensitivity_BER (869.3MHz)
PER [%]
100
LQW15
LQG15
10
spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 54 RX Sensitivity_PER (875.5MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 55 RX Sensitivity_BER (875.5MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 11 of 15
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
4.2 US Band (902928MHz) 4.2.1 TX Power / TX Current
ConditionPower Supply = 3.0V, Temperature = Room, Signal = Sin wave
The maximum transmit power is reduced about 0.3dB by the inductor change.
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
The maximum transmit power is reduced 0.3dB.
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 56 TX Power (902. 2MHz)
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 57 TX Current (902.2MHz)
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 58 TX Power (915.0MHz)
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 59 TX Current (915.0MHz)
TX Power [dBm]
15
10 LQW15
5
LQG15
0
-5
-10
-15 0
10 20 30 40 50 60 70 80 90 100 110 Gain Setting [dec]
Figure 60 TX Power (927.8MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
TX Current [mA]
60
50
LQW15
LQG15 40
30
20
10
0
-15
-10
-5
0
5
TX Power [dBm]
10
15
Figure 61 TX Current (927.8MHz)
Page 12 of 15
RL78/G1H, RAA604S00
Transceiver characteristics when changing RF components
4.2.2 TX Harmonics Response
ConditionPower Supply = 3.0V, Temperature = Room, Signal = Sin wave, Gain Setting = 104(dec)
The harmonic response is affected by the inductor change. However, there is enough margin for the standard. The circle in the figure shows the degraded part. The spec line in the figure shows FCC standard (FCC Part 15.247).
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 62 TX Harmonics_LQW15 (902.2MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 63 TX Harmonics_LQG15 (902.2MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 64 TX Harmonics_LQW15 (915.0MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 65 TX Harmonics_LQG15 (915.0MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQW15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 66 TX Harmonics_LQW15 (927.8MHz)
Level [dBm/100kHz]
20 10
0 -10 -20 -30 -40 -50 -60 -70
0
LQG15 spec
2000
4000
6000
Frequency [MHz]
8000
10000
Figure 67 TX Harmonics_LQG15 (927.8MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 13 of 15
RL78/G1H, RAA604S00 4.2.3 RX Sensitivity
Transceiver characteristics when changing RF components
ConditionPower Supply = 3.0V, Temperature = Room, Data Rate = 50kbps(m=1)
There is no degradation of RX sensitivity by the inductor change.
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 68 RX Sensitivity_PER (902.2MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 69 RX Sensitivity_BER (902.2MHz)
PER [%]
100 LQW15 LQG15
10 spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 70 RX Sensitivity_PER (915.0MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 71 RX Sensitivity_BER (915.0MHz)
PER [%]
100
LQW15
LQG15
10
spec
1
0.1
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 72 RX Sensitivity_PER (927.8MHz)
BER [%]
100
10
LQW15
LQG15
1
spec
0.1
0.01
0.001
-110
-105
-100
-95
-90
-85
-80
ANT IN [dBm]
Figure 73 RX Sensitivity_BER (927.8MHz)
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 14 of 15
RL78/G1H, RAA604S00 Revision History
Rev. 1.00
Date Jun.21.2019
Transceiver characteristics when changing RF components
Description
Page
Summary
-
First edition issued
R01AN4808EJ0100 Rev.1.00 Jun.21.2019
Page 15 of 15
General Precautions in the Handling of Microprocessing Unit and Microcontroller Unit Products
The following usage notes are applicable to all Microprocessing unit and Microcontroller unit products from Renesas. For detailed usage notes on the products covered by this document, refer to the relevant sections of the document as well as any technical updates that have been issued for the products.
1. Precaution against Electrostatic Discharge (ESD) A strong electrical field, when exposed to a CMOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop the generation of static electricity as much as possible, and quickly dissipate it when it occurs. Environmental control must be adequate. When it is dry, a humidifier should be used. This is recommended to avoid using insulators that can easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors must be grounded. The operator must also be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions must be taken for printed circuit boards with mounted semiconductor devices.
2. Processing at power-on The state of the product is undefined at the time when power is supplied. The states of internal circuits in the LSI are indeterminate and the states of register settings and pins are undefined at the time when power is supplied. In a finished product where the reset signal is applied to the external reset pin, the states of pins are not guaranteed from the time when power is supplied until the reset process is completed. In a similar way, the states of pins in a product that is reset by an on-chip power-on reset function are not guaranteed from the time when power is supplied until the power reaches the level at which resetting is specified.
3. Input of signal during power-off state Do not input signals or an I/O pull-up power supply while the device is powered off. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Follow the guideline for input signal during power-off state as described in your product documentation.
4. Handling of unused pins Handle unused pins in accordance with the directions given under handling of unused pins in the manual. The input pins of CMOS products are generally in the high-impedance state. In operation with an unused pin in the open-circuit state, extra electromagnetic noise is induced in the vicinity of the LSI, an associated shoot-through current flows internally, and malfunctions occur due to the false recognition of the pin state as an input signal become possible.
5. Clock signals After applying a reset, only release the reset line after the operating clock signal becomes stable. When switching the clock signal during program execution, wait until the target clock signal is stabilized. When the clock signal is generated with an external resonator or from an external oscillator during a reset, ensure that the reset line is only released after full stabilization of the clock signal. Additionally, when switching to a clock signal produced with an external resonator or by an external oscillator while program execution is in progress, wait until the target clock signal is stable.
6. Voltage application waveform at input pin Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (Max.) and VIH (Min.) due to noise, for example, the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (Max.) and VIH (Min.).
7. Prohibition of access to reserved addresses Access to reserved addresses is prohibited. The reserved addresses are provided for possible future expansion of functions. Do not access these addresses as the correct operation of the LSI is not guaranteed.
8. Differences between products Before changing from one product to another, for example to a product with a different part number, confirm that the change will not lead to problems. The characteristics of a microprocessing unit or microcontroller unit products in the same group but having a different part number might differ in terms of internal memory capacity, layout pattern, and other factors, which can affect the ranges of electrical characteristics, such as characteristic values, operating margins, immunity to noise, and amount of radiated noise. When changing to a product with a different part number, implement a systemevaluation test for the given product.
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information.
2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights, or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples.
3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others.
4. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by you or third parties arising from such alteration, modification, copying or reverse engineering.
5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The intended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; industrial robots; etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key financial terminal systems; safety control equipment; etc. Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electronics product that is inconsistent with any Renesas Electronics data sheet, user's manual or other Renesas Electronics document.
6. When using Renesas Electronics products, refer to the latest product information (data sheets, user's manuals, application notes, "General Notes for Handling and Using Semiconductor Devices" in the reliability handbook, etc.), and ensure that usage conditions are within the ranges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such specified ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you.
8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in compliance with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or transfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document.
11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas
Electronics products.
(Note1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled subsidiaries.
(Note2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
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