78.B2GCZ.4000C DDR3 SODIMM 12800-11 512x8 4GB SA-D 1.35V

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78.B2GCZ.4000C 1.35V
RoHS Compliant
4GB DDR3 1.35V SO-DIMM
Product Specifications January 14, 2014 Version 1.1
Apacer Technology Inc.
1F., No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City 236, Taiwan Tel: +886-2-2267-8000 Fax: +886-2-2267-2261 www.apacer.com

Table of Contents
General Description .......................................................................................................2 Ordering Information .....................................................................................................2 Key Parameters ..............................................................................................................2 Specifications:................................................................................................................3 Features: ......................................................................................................................... 4 Pin Assignments.............................................................................................................5 Pin Descriptions .............................................................................................................7 Functional Block Diagram.............................................................................................8 Absolute Maximum Ratings ..........................................................................................9 DRAM Component Operating Temperature Range.....................................................10 Operating Conditions ...................................................................................................11 Mechanical Drawing....................................................................................................12

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General Description
Apacer 78.B2GCZ.4000C is a 512M x 64 DDR3 SDRAM (Synchronous DRAM) SO-DIMM. This high-density memory module consists of 8 pieces 512M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM. The module is a 204-pins small-outlined, dual in-line memory module and is intended for mounting into a connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR3 SDRAM. The following provides general specifications of this module.

Ordering Information

Part Number 78.B2GCZ.4000C

Bandwidth 12.8 GB/sec

Speed Grade Max Frequency CAS Latency

1600 Mbps

800 MHz

CL11

Density 4GB

Organization 512M x 64

Key Parameters

Component 512M x8*8

Rank 1

MT/s
Grade
tCK (min) CAS latency tRCD (min)
tRP (min) tRAS (min) tRC (min) CL-tRCD-tRP

DDR3-1066
-CL7 1.875
7 13.125 13.125
37.5 50.625 7-7-7

DDR3-1333
-CL9 1.5 9 13.5 13.5 36 49.5 9-9-9

DDR3-1600
-CL11 1.25 11 13.75 13.75 35 48.75 11-11-11

Unit
ns tCK ns ns ns ns tCK

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Specifications:
 On-DIMM thermal sensor : No  Organization: 512 words x 64 bits, 1 rank  Integrating 8 pieces of 4G bits DDR3 SDRAM sealed in FBGA  Package: 204-pin socket type small outline dual in-line memory module
(SO-DIMM)  PCB: height 30.0mm, lead pitch 0.6 mm (pin), lead-free (RoHS compliant)  Power supply VDD: 1.35V (+0.1V ~ -0.067V)  Serial Presence Detect (SPD)  Eight Internal banks for concurrent operation (components)  Interface: SSTL_13  Burst lengths (BL): 8 and 4 with Burst Chop (BC)  CAS Latency (CL): 6, 7, 8, 9, 10, 11  CAS Write Latency (CWL): 5, 6, 7, 8  Supports auto pre-charge option for each burst access  Supports auto-refresh/self-refresh  Refresh cycles: 7.8  at 0 TC  +85

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Features:
 Double-date-rate architecture: 2 data transfers per clock cycle  The high-speed data transfer is realized by the 8-bits prefetch pipelined
architecture.  Bi-directional differential data strobe (DQS and /DQS) is transmitted /
received with data for capturing data at the receiver  DQS: edge-aligned with data for read; center-aligned with data for write  Differential clock inputs (CK and /CK)  DLL aligns DQ and DQS transitions with CK transitions  Data mask (DM) for writing data  Posted CAS by programmable additive latency for enhanced command
and data bus efficiency  On-Die-Termination (ODT) for improved signal quality: Synchronous
ODT/Dynamic ODT/Asynchronous ODT  Multi-Purpose Register (MPR) for temperature read out  ZQ calibration for DQ drive and ODT  Programmable Partial Array Self-Refresh (PASR)  /Reset pin for power-up sequence and reset function  SRT range: normal/extended, auto/manual self-refresh  Programmable output driver impedance control

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Pin Assignments

Pin No. 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 51

Pin name VREFDQ
VSS DQ0 DQ1 VSS DM0 VSS DQ2 DQ3 VSS DQ8 DQ9 VSS /DQS1 DQS1 VSS DQ10 DQ11 VSS DQ16 DQ17 VSS /DQS2 DQS2 VSS DQ18

Pin No. 53 55 57 59 61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 97 99 101 103

Pin name DQ19 VSS DQ24 DQ25 VSS DM3 VSS DQ26 DQ27 VSS CKE0 VDD NC BA2 VDD
A12(BC) A9 VDD A8 A5 VDD A3 A1 VDD CK0 /CK0

Pin No. 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143 145 147 149 151 153 155

Pin name VDD
A10(AP) BA0 VDD /WE /CAS VDD A13 /CS1 VDD NC VSS DQ32 DQ33 VSS
/DQS4 DQS4 VSS DQ34 DQ35 VSS DQ40 DQ41 VSS DM5 VSS

Pin No. 157 159 161 163 165 167 169 171 173 175 177 179 181 183 185 187 189 191 193 195 197 199 201 203

Pin name DQ42 DQ43 VSS DQ48 DQ49 VSS /DQS6 DQS6 VSS DQ50 DQ51 VSS DQ56 DQ57 VSS DM7 VSS DQ58 DQ59 VSS SA0
VDDSPD SA1 VTT

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Pin No. 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52

Pin name VSS DQ4 DQ5 VSS
/DQS0 DQS0 VSS DQ6 DQ7 VSS DQ12 DQ13 VSS DM1 /RESET VSS DQ14 DQ15 VSS DQ20 DQ21 VSS DM2 VSS DQ22 DQ23

Pin No. 54 56 58 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100 102 104

Pin name VSS DQ28 DQ29 VSS
/DQS3 DQS3 VSS DQ30 DQ31 VSS CKE1 VDD A15(NC) A14(NC) VDD A11
A7 VDD A6 A4 VDD A2 A0 VDD CK1 /CK1

Pin No. 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144 146 148 150 152 154 156

Pin name VDD BA1 /RAS VDD /CS0 ODT0 VDD ODT1 NC VDD
VREFCA VSS DQ36 DQ37 VSS DM4 VSS DQ38 DQ39 VSS DQ44 DQ45 VSS
/DQS5 DQS5 VSS

Pin No. 158 160 162 164 166 168 170 172 174 176 178 180 182 184 186 188 190 192 194 196 198 200 202 204

Pin name DQ46 DQ47 VSS DQ52 DQ53 VSS DM6 VSS DQ54 DQ55 VSS DQ60 DQ61 VSS /DQS7 DQS7 VSS DQ62 DQ63 VSS /EVENT SDA SCL VTT

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Pin Descriptions

Pin Name

Description

Ax*

SDRAM address bus

BAx

SDRAM bank select

DQx

DIMM memory data bus

/RAS

SDRAM row address strobe

/CAS

SDRAM column address strobe

/WE

SDRAM write enable

/CSx

SDRAM Chip select lines

CKEx

SDRAM clock enable lines

CKx

SDRAM clock input

/CKx

SDRAM Differential clock input

DQSx

SDRAM data strobes(positive line of differential pair)

/DQSx

SDRAM data strobes(negative line of differential pair)

DMx

SDRAM input mask

SCL

Clock input for serial PD

SDA

Data input/output for serial PD

SAx

Serial address input

VDD

Power for internal circuit

VDDSPD

Serial EEPROM positive power supply

VREFDQ

SDRAM I/O reference supply

VREFCA

SDRAM command/address reference supply

VSS

Power supply return(ground)

VTT

SDRAM I/O termination supply

/RESET

Set DRAM to known state

ODTx

On-die termination control lines

NC

Spare pins(no connect)

/EVENT

An output of the thermal sensor to indicate critical module temperature

*IC Component Composition:

128Mx8 256Mx8 512Mx8 1024Mx8

A0~A13 A0~A14 A0~A15 A0~A15

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Functional Block Diagram

S0 RAS CAS WE CK0 CK0 CKE0 ODT0 A[0:N]\BA[0:N]

DQS0 DQS0
DM0 DQ [0:7]
DQS2 DQS2
DM2 DQ [16:23]
DQS4 DQS4
DM4 DQ [32::39]

DQS DQS DM DQ [0:7]

240ohm +/-1% ZQ
D0

DQS1 DQS1
DM1 DQ [8:15]

DQS DQS DM DQ [0:7]

240ohm +/-1% ZQ
D4

SCL SCL

SA0

A0 (SPD)

SA1

A1

A2

WP

SDA

CS RAS CAS WE CK CK CKE ODT A[0:N]\BA[0:N]

CS RAS CAS WE CK CK CKE ODT A[0:N]\BA[0:N]

CS RAS CAS WE CK CK CKE ODT A[0:N]\BA[0:N] CS RAS CAS WE CK CK CKE ODT A[0:N]\BA[0:N]

DQS DQS DM DQ [0:7]

240ohm +/-1% ZQ
D1

DQS3 DQS3
DM3 DQ [24:31]

DQS DQS DM DQ [0:7]

240ohm +/-1% ZQ
D2

DQS5 DQS5
DM5 DQ [40:47]

DQS DQS DM DQ [0:7]

240ohm +/-1% ZQ
D5

DQS DQS DM DQ [0:7]

240ohm +/-1% ZQ
D6

Vtt VDDSPD
VREFCA VREFDQ
VDD VSS CK0
CK0 CK1 CK1 S1 ODT1 CKE1
EVENT RESET

Vtt SPD / TS D0-D7 D0-D7 D0-D7 D0-D7, SPD, Temp sensor D0-D7 D0-D7
Terminated at near card edge NC NC NC Temp Sensor D0-D7

V1 D4 V2 D5 V3 D6 V4 D7

Vtt

CS RAS CAS WE CK CK CKE ODT A[0:N]\BA[0:N] CS RAS CAS WE CK CK CKE ODT A[0:N]\BA[0:N]

Vtt

DQS6 DQS6
DM6 DQ [48::55]

CS RAS CAS WE CK CK CKE ODT A[0:N]\BA[0:N] CS RAS CAS WE CK CK CKE ODT A[0:N]\BA[0:N]

DQS DQS DM DQ [0:7]

240ohm +/-1% ZQ
D3

DQS7 DQS7
DM7 DQ [56::63]

DQS DQS DM DQ [0:7]

240ohm +/-1% ZQ
D7

V1 D0 V2 D1 V3 D2 V4 D3
Address and Control lines NOTES 1. DQ wiring may differ from that shown however ,DQ, DM, DQS, and DQS relationships are maintained as shown

Vtt

Vtt

VDD

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Absolute Maximum Ratings

Parameter

Symbol

Description

Units

Voltage on VDD pin relative to Vss

VDD

- 0.4 V ~ 1.975 V

V

Voltage on VDDQ pin relative to Vss

VDDQ

- 0.4 V ~ 1.975 V

V

Voltage on any pin relative to Vss

VIN, VOUT

- 0.4 V ~ 1.975 V

V

Storage Temperature

TSTG

-55 to +100



Notes: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. 3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than 0.6 x VDDQ, when VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV. .

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DRAM Component Operating Temperature Range

Symbol TOPER

Parameter Normal Operating Temperature Range Extended Temperature Range

Rating 0 to 85 85 to 95

Units  

Notes 1,2 1,3

Notes: 1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For
measurement conditions please refer to the JEDEC document JESD51-2. 2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported
during operation, the DRAM case temperature must be maintained between 0 - 85 under all operating conditions. 3. Some applications require operation of the DRAM in the Extended Temperature Range between 85 and 95 case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either
use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperature range.

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Operating Conditions

Recommended DC Operating Conditions - DDR3L (1.35V) operation

Symbol

Parameter

Rating Min. Typ. Max.

VDD Supply Voltage

1.283 1.35 1.45

VDDQ Supply Voltage for Output

1.283 1.35 1.45

Units
V V

Notes: 1. If minimum limit is exceeded, input levels shall be governed by DDR3L specifications. 2. Under 1.5V operation, this DDR3L device operates to the DDR3 specifications under the same speed timings as
defined for this device. 3. Once initialized for DDR3 operation, DDR3L operation may only be used if the device is in reset while VDD and
VDDQ are changed for DDR3L operation.

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Mechanical Drawing

Front side 2.00 Min

21.15

9.00 (DATUM -A-)

Component area (Front)

Unit: mm 3.80 Max 4x Full R

6.00
1 203
4.00 Min

2.15
Back side 2.45

21.00

B

A

39.00

67.60

63.60 C

2.45

D

1.00 ± 0.10

2.15

2 204
4.00 20.00
30.00

Component area (Back)

Detail A

(DATUM -A-)

Detail B

0.60

FULL R

1.65

2.55 Min

0.35 Max

0.45 ± 0.03 Detail C
3.00 1.35

4.00 ± 0.10

3.00 1.00 ± 0.10

Detail D

Contact pad

0.2 Max 0.35 Max

(All dimensions are in millimeters with ±0.15mm tolerance unless specified otherwise.)

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Revision History

Revision Date

Description

0.9

08/28/2012 Official release

1.0

08/29/2012 release

1.1

07/23/2013 Changed headquarters address

Remark

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Global Presence

Taiwan (Headquarters) U.S.A. Japan Europe China India

Apacer Technology Inc. 1F., No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City 236, Taiwan R.O.C. Tel: +886-2-2267-8000 Fax: +886-2-2267-2261 amtsales@apacer.com Apacer Memory America, Inc. 386 Fairview Way, Suite102, Milpitas, CA 95035 Tel: 1-408-518-8699 Fax: 1-408-935-9611 sa@apacerus.com Apacer Technology Corp. 5F, Matsura Bldg., Shiba, Minato-Ku Tokyo, 105-0014, Japan Tel: 81-3-5419-2668 Fax: 81-3-5419-0018 jpservices@apacer.com Apacer Technology B.V. Science Park Eindhoven 5051 5692 EB Son, The Netherlands Tel: 31-40-267-0000 Fax: 31-40-267-0000#6199 sales@apacer.nl Apacer Electronic (Shanghai) Co., Ltd 1301, No.251,Xiaomuqiao Road, Shanghai, 200032, China Tel: 86-21-5529-0222 Fax: 86-21-5206-6939 sales@apacer.com.cn Apacer Technologies Pvt Ltd, # 535, 1st Floor, 8th cross, JP Nagar 3rd Phase, Bangalore ­ 560078, India Tel: 91-80-4152-9061 sales_india@apacer.com

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