Citi Sound Electronic CS900 900MHz 40 Channel Analog Modulation Cordless Phone User Manual Hand RF module
Citi Sound Electronic Limited 900MHz 40 Channel Analog Modulation Cordless Phone Hand RF module
Contents
- 1. User manual
- 2. Base RF module
- 3. Hand RF module
- 4. FCC caution for manual
Hand RF module
DATE 5 2000.03. 15 SPECIFICATION PRODUCT 2 RF UNIT MODEL NAME : RU0926HI4HAA SAMSUNG ELECTRO—MECHANICS CO., LTD. 0 Head Office & Sales Dept. . Hongkong Office 314, Maetan 3 Dong, PaldaI-Ku’ Suwon. 55/F. Cenu‘ul Plaza, lflHarbour Road Kyunski—Do. Korea Wanthai, Hongkong, China TEL 2 +82+ 331+210-6945 TEL 3 (852)2862-6331~2 FAX 1 +82+331+ 210—6554 FAX f (852)2862-6348~9 i . GENERAL DESCH l PT I ON 1.1 Features This HU0926H14HAA is a HF(Radio Frequency) UNIT for QOOMHZ band(ISM BAND) cordless telephone . As 8 FULL DUPLEX system. It performes transmission and reception through the ANTENNA of the module. It has 40 channels with SOKHz channel sapcing, 1.2 General Specifications N0 Items Speclflcation l Tx Frequency 925,30 ~ 927.25lliz 2 Rx Frequency 90230 ~ 904.75Ml'tz (Lower Heterodyne) 3 Channel Nurrber 400H Full Duplex Channel Separation MHZ 4 Tlst IF 10.7qu 5 2nd lE 450m 6 2nd Local 10.25MHZ 7 Modulation FM l’ 4 "collation Frequency : 1KHz 8 Standard Test Modulation Standard Deviation : GKHz Oprtatinu «To to +45’C 9 Temm“’° “am storage : -20'c to not TX and RX : arm 10 Power Supply Current RX 2 5m Nominal Power Supply Voltage Base 1 3.6VDC 11 Portable .6VDC Power Supply Voltage Range Base 1 3.3 to some Portable 1 3.3 to 5.0VDC 50 ohrl _~___._ (D MODEL NAME @ MW mum“; (9 PRODUCT stzE (race) (9 A SIMPLIFIED HUDMMEMQ NATIONCHARACTER ® ® ® ® @ © SERIES TYPE DATE ooormg ®YEAHew5EKrerE ® (2) HAND SET SIN rooooorg Qsenlserro. ® @ Pmucr LINE A—ra-o7rs(ee.1o) AR VP rev 0 | me 1 SAMSUNG ELECTRO—MECHANICS CO., LTD. 2. ELECTRICAL SPECIFICATION K Test with HPBQEOA Oomnicatlon Test Set Tx Specificatlon Test Condition : Room Temperature/Nominal Power Supply Voltage w. Items Specification Condition 5 t 8 ppm 0 to +451), N0 Mod. i Frequency Tolerance |>—- s14ppm 251311,NOMod. 2 Tx Power -1.5d3m +3/—3dB SETTING : 20 CH. N0 Mod. . . Modulation Frequency "(Hz 3 Devration emu 2.5KHz Level : —1I5dBm L. r 4 Modulation SIN 2 40 dB CCITI' ON 5 Spurious Emissions S —58dBn 1 GHZ 13TH ) (conduction rest) 5 —50d!n 1 GHz um ) . Typi 15m PLL ICfHIG'I SPEED MODE 6 PLL “m“ ”" “ms Max: zsms (ADJACENT CHANNEL saw) ] Rx Specification Test Condition : Room Temperature/Nominal Power Supply Valtaus/OOI'IT Filter ON no. Items Specification Condition 1 Receiving Ssnsitivliy S —110 TZdB SINAD. XTYP 2065 SINAD , 6012 Deviation 2 Demdulation SN 2 43dB RF “mm Level: -60dB|i a Distortion _rS Sit The Same Conditlon Item 2 4 Noise Detect Sensitivity ~114dBmt GdB ‘ 5 Audio Output Levei -12 dBni 263 The Same Condition Item 2 Adjacent Channel Rejection 2 30dB 2 Signal Method ii 6 A _ LNDESIRE SIGNAL 1mm Reflect“ 2 25d3 INPUT Fem: +50KHz (on —so«HzJ 8 Signal Method SIGNAL 7 Intermodulation Rejection 2 40:18 mgfiilfmo': +5mHz,+100KHz (OR —5msz—1OG(HZ) Typ: iSmS PLL ICZHIGH SPEED WDE 5 P“- L°°k “9 TI“ uax: 25m (ADJACENT CHANNEL SELECT) Carrier Detect Tlme The Same Conditlon Item 8 A—13—0716(88. 10) AR VP I REV—i o mos—l SAMSUNG ELECTRO—MECHANICS C0. , LTD. x RX TEST CONDITION of No.6 & N07 NOAG DESIRE! INPUT LEVEL SINAD ZOdB POINT, IKHZ MOO, GKHZ OEV UNDESIHE: INPUT LEVEL SINAD IZdB POINT. 4OOHZ MOD. GKHZ DEV No‘7 DESIRE: INPUT LEVEL SINAD 20dB POINT , "(Hz MOD, 5tz DEV UNDESIRE 1: INPUT FREQ. +50KHZ(OFI —50I(Hz). INPUT LEVEL SINAD 12dB POINT INDESIPE 2: INPUT FPEO, +IOOKHZ(0R —1OOI(Hz), INPUT LEVEL SINAD 12dB POINT. AOOHZ MOO. SKHz DEV 3. PIN DESCRIPTION HUN 1 z B+ NC 3 4 Lin DATA 5 6 CLOCK CE 7 s TX_VCC GND 9 10 0/5 AF_OUT u 12 NC BOTTOM VI EW MODULATION VOICE INPUT OPETATING VOLTAGE INPUT LOCK DETECTION OUTPUT, ACTIVE "H" TIL DATA PLL CLOCK PLL ENABLE JTX PART CONTROL, ACTIVE 'L“ COMMON (HID CARRIER SENSE OUTPUT, ACTIVE I'L" DEMODULATION AUDIO OUTPUT Iuo connecnou A—13~0715(Be, 10) AR VP PEV 0 PAGE 3 SAMSUNG ELECTRO—MECHANICS CO., LTD. 4, FREQUENCY TABLE A—13—0716(88.10)AHVP asv o | m; 4 SAMSUNG ELECTRO—MECI—iANICS COV , LTD. 5. PLL CHANNEL SELECTION OPERATING DATA 1.1 Input data (1)Setting RX-PLL division data MSB LSB H Lois D15 D14 Dis D12 Du 1)ng DaDr|De D5|D4 D3 D1|DIDO N=Die*216+D15*215+Di4*214+ ----- mixz‘motf =((fo-10.7)*105)/12‘5*103 =71368 ' 71524 fanFrequency of RX ” 902.8000‘904‘75OOMHZ (2)Setting TX-PLL division data MSB LSB [flaps Dis D14 D13 [Du D11 D10 D9 D3 D1 De D5 in Dle2 |D1 Do N=DW215+D15*215+D14'2“+ ----- +D1*21+Do*2° =fo/12.5*103 =74024 - 74188 fanrequency of TX —— 925.3000~927.2500MHZ For example) IF setting IX-PLL division data 925.3000MHZ 925 . 3000* 105/ 12 . 5* 103= ( 74024) io=( 10010000100101000) z DsIkDiDo L H D15 D15 Du Dis Du Du Din D9 D5 01 DsiDsiDc LHHLLHLLLLHLLIH|LIHLLL (3)Setting Reference division data MSB _T HHDquDs D5 D7 D5 D5D4D3D2D1IPLJ N=Dm2"+nm*2‘°+ngs2’+ ----- +Dv2‘+sz° = 1640 (Fixed) [Sett ing] N=(1640)m=(011001101000)z HHDquDstDzDst HHLHHLLHH D4D3DZDIDO LHLLL A—13—0716(88. 10) AH VP PEV 0 PAGE 5 SAMSUNG ELECTHO—MECHANICS CO., LTD. (4)Setting options MSB LLL|D11DmlD9 D3 D7 De Ds mmuzlm Del D2,D3,D5,D63C1arge pump drive bits _P A D5 D5 RX LL Charge D3 Dz TX PLL Chai'ge pump drive pump drive L L i’ lOO/IA L L i 100m H L 5: 200m H L i 200ml L H 1 400m L ll i 400m H H i 800m H H ‘.l: 800m DuiRX loop filter control bit Du Loop filter at RX L For high speed H For normal operationg *CAUTION28etting options in he electrical specifications Operating mode Du] De D5 I D3 l Dz High speed mode L H H y H 1 H Others H L L y L l L D4.Dv.Ds:0perating control bits Da 1 D1 D4 Reference RX—PLL TX—PLL X L L ON ON ON X L H ON ON STAND-BY X H L ON STAND-BY ON L H H ON STAND-BY STAND-BY H H H STAND‘BY STAND-BY STAND—BY Do,D1,Ds,Dm:Fixed bits Dm D9 D1 D0 L H L L [For example] If setting options for normal oprating mode LLDiiDmDsDaDlestmDsDzDLDn L L H L H L L L L L L L L L A—13—0716(88.10) AR VP E“ M SAMSUNG ELECTED—MECHANICS CO. , LTD. 5.2 Timing chart tin-l Items Symbols Eelectronic characteristics Set up time of "DI" tsun tsun 2 0.1145 fl Hold time of "DI" tam tam) 2 0.2145 Rate of "CL" tam tam 2 1.0115 High level time of "CL" tom tom 2 0.2115 Set up time of "CE" tsus tsus 2 0.1115 Hole time of "CE" tubs tans 2 1.4115 High level time of "CE" tsm ts‘m 2 0.2;5 5.3 Input voltage(DI, CL, CE) Input max. "H"level 2.5V 5.7V "L" level ‘0.2V 0.5V A—13—0716(88.10) AR VP SAMSUNG ELECTRO—MECHANlCS CO., LTD 6. OUTLINE DRAWING A—13—0716(88.10)AHVP | nsv o | mg 9 SAMSUNG ELECTED-MECHANICS CO., LTD.
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