1990_Fujitsu_Power_Transistor_Products_Data_Book 1990 Fujitsu Power Transistor Products Data Book
User Manual: 1990_Fujitsu_Power_Transistor_Products_Data_Book
Open the PDF directly: View PDF 
.
Page Count: 334
Ring Emitter Transistors
Full Plastic Mold Ring Emitter Transistors
Darlington Transistor Arrays
Field Effect Transistor Arrays
..
EI
III
..
Ordering Information
Ell
1m
Sales Information
III
Design Information
Appendix
o
OJ
FUJITSU
Power Transistor Products
1990
Data
Book
Fujitsu Limited
Tokyo. Japan
Fujitsu Microelectronics. Inc.
Son Jose. California. U.S.A.
Fujitsu Mikroelectronlk GmbH
Frankfurt. ER. Germany
Fujitsu Microelectronics Asia PTE limited
Singapore
Copyrighl© 1990 Fujitsu Microelaclronica,lnc., San Jose, California
All Rights Reserved.
Circuit diagrams using Fujitsu products are included to illustrate typical semiconduc;tor applications. Information sufficient for
construction purposes may not be shown.
The information contained in this document has been carefuUy checked and is believed to be reliable. However, Fujitsu
Microeiaclronics, Inc. assumes no responsibilily for inaccuracies.
The information convayed in this document doss not convey any license under the copyrights, palent rights or trademarks
claimed and owned by Fujitsu Umiled, its subsidiaries, or Fujitsu Microelectronics, Inc.
Fujitsu Microelectronics, Inc. reserves the right to change products or specifications without notice.
No part of this publication may be copied or reproduced in any form or by any means, or transferred to any third party without prior
written consent of Fujitsu MicroeIacIronics, Inc.
This document i. published by the Publications Department, Fujitsu Microeiaclronics, Inc.,
3545 North First Street, San Jose, California, U.S.A. 95134-1804; U.S.A.
Printed in the U.S.A.
Edition 1.1
Contents
Power Transistor Products
Power Transistor Cross Reference Index ................................................. viii
Infroduction-Fujitsu's Power Transistor Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. xi
Section 1 - Ring Emitter Transistors - At a Glance ............................
1-1
2SA1041
2SA1042
2SC2431
2SC2432
Silicon
Silicon
Silicon
Silicon
PNP/NPN
PNP/NPN
PNP/NPN
PNP/NPN
Ring
Ring
Ring
Ring
Emitter Transistor
Emitter Transistor
Emitter Transistor
Emitter Transistor
.........................
.........................
.........................
.........................
1-3
1-3
1-3
1-3
2SA1043
2SA1044
2SC2433
2SC2434
Silicon
Silicon
Silicon
Silicon
PNP/NPN
PNP/NPN
PNP/NPN
PNPINPN
Ring
Ring
Ring
Ring
Emitter Transistor
Emitter Transistor
Emitter Transistor
Emitter Transistor
.........................
.........................
.........................
.........................
1-7
1-7
1-7
1-7
2SA1072
2SA1072A
2SA1073
Silicon PNP Ring Emitter Transistor ............................ 1-11
Silicon PNP Ring Emitter Transistor ............................ 1-11
Silicon PNP Ring Emitter Transistor ............................ 1-11
2SA1077
Silicon PNP Ring Emitter Transistor ............................ 1-13
2SA1078
Silicon PNP Ring Emitter Transislor ............................ 1-15
2SA1080
Silicon PNP Ring Emitter Transistor ............................ 1-17
2SC2428
Silicon NPN Ring EmHterTransistor ............................ 1-19
2SC2522
2SC2522A
2SC2523
Silicon NPN Ring EmHter Transistor ............................ 1-21
Silicon NPN Ring EmHterTransistor ............................ 1-21
Silicon NPN Ring EmHter Transistor ............................ 1-21
2SC2525
2SC2526
Silicon NPN Ring Emitter Transistor ............................ 1-23
Silicon NPN Ring EmHter Transistor ............................ 1-23
2SC2527
Silicon NPN Ring Emitter Transistor ............................ 1-25
2SC2528
Silicon NPN Ring EmHter Transistor ............................ 1-27
2SC2530
Silicon NPN Ring Emitter Transistor ............................ 1-29
2SC2429
2SC2429A
2SC2920
2SC2964
2SC2965
Silicon NPN
Silicon NPN
Silicon NPN
Silicon NPN
Silicon NPN
2SC3044
2SC3044A
Silicon NPN Ring EmHter Transistor ............................ 1-45
Silicon NPN Ring EmHter Transistor ............................ 1-45
Ring Emitter Transistor
Ring EmHter Transistor
Ring EmHter Transistor
Ring Emitter Transistor
Ring Emitter Transistor
............................
............................
............................
............................
............................
1-31
1-31
1-31
1-31
1-31
III
Contents (Continued)
Power Transistor Products
Section 1 - Ring Emitter Transistors
(Continued)
2SC3045
Silicon NPN Ring Emitter Transistor ............................ 1-51
2SC3046
Silicon NPN Ring Emitter Transistor ............................ 1-57
2SC3055
Silicon NPN Ring Emitter Transistor ...•................•....... 1-63
2SC3056
2SC3056A
Silicon NPN Ring Emitter Transistor ............................ 1-69
Silicon NPN Ring Emitter Transistor ............................ 1-69
2SC3057
Silicon NPN Ring Emitter Transistor ............................ 1-75
2SC3058
Silicon NPN Ring Emitter Transistor ........•................... 1-81
2SC3058A
Silicon NPN Ring Emitter Transistor ............................ 1-87
2SC3059
2SC3060
2SC3061
2SC3178
Silicon NPN
Silicon NPN
Silicon NPN
Silicon NPN
FT1551
FT2551
Silicon NPN Ring Emitter Transistor ...•....................... 1-113
Silicon PNP Ring Emitter Transistor ........................... 1-115
Ring
Ring
Ring
Ring
Emitter Transistor
Emitter Transistor
Emitter Transistor
Emitter Transistor
............................
............................
............................
..............•.............
1-93
1-93
1-93
1-93
Section 2 - Full Plastic Mold Ring Emitter Transistors - At a Glance .........
2-1
Introduction ............................................................. 2-3
2SC3842
T0-3PF Full Plastic Mold NPN Power Transistor ................... 2-5
2SC3843
T0-3PF Full Plastic Mold NPN Power Transistor ................... 2-9
2SC3844
T0-3PF Full Plastic Mold NPN Power Transistor .................. 2-13
2SC3845
T0-3PF Full Plastic Mold NPN Power Transistor •................. 2-17
T0-3PF Full Plastic Mold NPN Power Transistor .................. 2-21
2SC3846
T0-3PF Full Plastic Mold NPN Power Transistor .................. 2-25
2SC3847
T0-3PF Full Plastic Mold NPN Power Transistor ........•......... 2-29
2SC3947
TO-3PF Full Plastic Mold NPN Power Transistor .................. 2-33
2SC3948
TO-3PF Full Plastic Mold NPN Power Transistor .................. 2-37
2SC3949
Section 3 - Darlington Transistor Arrays - At a Glance ....................
3-1
Introduction ...............................•............................• 3-3
FT5753M
Silicon NPN Darlington Transistor Array .......................... 3-9
FT5756M
Silicon NPN Darlington Transistor Array .......................... 3-9
FT5754M
Silicon NPN Darlington Transistor Array ......................... 3-11
FT5757M
Silicon NPN Darlington Transistor Array ......................... 3-11
Iv
Contents
(Continued)
Power Transistor Products
Section 3 - Darlington Transistor Arrays - At a Glance (Continued)
FT5755M
FT5758M
FT5759M
FT5760M
FT5761M
FT5763M
FT5766M
FT5764M
FT5767M
FT5769M
FT5770M
FT5776M
FT5777M
FT5778M
FT5786M
FT5787M
Silicon NPN Darlington Transistor Array .........................
Silicon NPN Darlington Transistor Array .........................
Silicon PNP Darlington Transistor Array .........................
Silicon PNP Darlington Transistor Array .........................
Silicon PNP Darlington Transistor Array .........................
Silicon NPN Darlington Transistor Array .........................
Silicon NPN Darlington Transistor Array .........................
Silicon NPN Darlington Transistor Array .........................
Silicon NPN Darlington Transistor Array .........................
Silicon PNP Darlington Transistor Array .........................
Silicon PNP Darlington Transistor Array .........................
Silicon NPN and PNP Darlington Transistor Array .................
Silicon NPN and PNP Darlington Transistor Array .................
Silicon NPN and PNP Darlington Transistor Array .................
Silicon NPN and PNP Darlington Transistor Array .................
Silicon NPN and PNP Darlington Transistor Array .................
3-13
3-13
3-15
3-17
3-19
3-21
3-21
3-23
3-23
3-25
3-27
3-29
3-33
3-37
3-41
3-45
Section 4 - Field Effect Transistor Arrays - At a Glance . ................... 4-1
Introduction ............................................................. 4-3
FT611 0
Silicon N-channel Enhancement Mode Power ..................... 4-7
FT6110D
MOS FET Array
FT6111
Silicon N-channel Enhancement Mode Power .................... 4-11
FT6111 D
MOS FET Array
Silicon N-channel Enhancement Mode Power .................... 4-15
FT6112
FT6112D
MOS FET Array
FT6120
Silicon N-channel Enhancement Mode Power .................... 4-19
FT6120D
MOS FET Array
FT6121
Silicon N-channel Enhancement Mode Power .................... 4-23
FT6121D
MOS FET Array
FT6122
Silicon N-channel Enhancement Mode Power .................... 4-27
FT6122D
MOS FET Array
Section 5 - Design Information - At a Glance ............................ 5--1
Application Notes ........................................................ 5--3
Quality Control at Fujitsu .................................................. 5--45
Quality Control Flowchart ................................................. 5--47
v
Contents
(Continued)
Power Transistor Products
Section 6 - Ordering Information - At a Glance ........................... 6-1
Product Marking ..............................................•.•........ 6-3
Ordering Codes ............................•....................•........ 6-3
Package Codes .......•..•.....................................•......... 6-3
Section 7 - Sales Information - At a Glance . ............................. 7-1
Introduction to Fujitsu ..•..•..•................................•.........•. 7-3
Integrated Circuits Corporate Headquarters - Worldwide .......................... 7-7
FMI Sales OHices for North and South America ................................. 7-8
FMI Representatives - USA ..••.•..•.......•............................... 7-9
FMI Representatives - Canada ............................................. 7-11
FMI Representatives - Mexico .................•.•......................... 7-11
FMI Representatives - Puerto Rico ......................................... 7-11
FMI Distributors - USA ................................................... 7-12
FMI Distributors - Canada .................•.............................. 7-16
FMG Sales OHices for Europe ...................••......................•. 7-17
FMG Distributors - Europe ............................................... 7-18
FMA Sales OHices for Asia and Australia ..•.................................. 7-20
FMA Representatives - Asia ...•........................................... 7-21
FMA Distributors - Asia and Australia ........•................•............. 7-22
Section 8 - Appendix - Table of Product Specifications •...•......................•.... 8-1
vi
Power Transistor Cross Reference Index
FMI Replacement
Part Number
Industry Standard
EXACT
Replacement
Pag.Number
EQUIVALENT
Replacement
Pag.Number
1811 0A-1 00
2803061
1-93
18110A-100
2803846
2-21
2N4399
28A1044
1-7
2N5302
2802434
1-7
2N5879
28A1042
1-3
2N5881
2802432
1-3
2N5883
28A1044
1-7
2N6438
28A1043
1-7
2N6834
2803044A
1-45
28A1072
28A1072
1-11
28A1072A
28A1072A
1-11
28A1073
28A1073
1-11
28A1077
28A1077
1-13
28A1078
28A1078
1-15
28A1080
28A1080
1-17
2802422
2802522
141
1-19
2802428
2802428
2802429
2802429
1-31
2802522A
2802522A
141
2802523
2802523
141
2802527
2802527
145
2802528
2802528
1-27
2802530
2802530
149
2802920
2802920
1-31
2803059
2803059
1-93
2803178
2803178
1-93
2803843
2803843
2-9
2803847
2803847
2-,25
2803948
2803948
2-33
280310
2802964
1-31
280311
2802964
1-31
280395
2802965
1-31
280395
2803949
2-37
280396
2802964
1-31
BOY93
2803044
1-45
BOY94
2803044280
1-45
vii
Power Transistor Cross Reference Index (Continued)
F.. Replacement
Part Number
Induatry Standard
EQUIVALENT
EXACT
Replacement
Page Number
BU221
2503044
1-45
BU222
2503044
1-45
BU326A
2503044
1-45
BU5313
25C2964
1-31
BU513A
25C2429A
1-31
BU514
2503058
1~1
BU514A
2503058A
1~7
Replacement
PegeNumber
2503844
2-13
BUS46P
2SC3044A
1-45
BUS46P
2503056A
1~9
BUW44
25C2964
1-31
BUW45
25C2964
1-31
BUW46
25C2429A
1-31
BUX17
25C2964
1-31
BUX17A
25C2964
1-31
BUX17B
25C2964
1-31
BUX17C
25C2964
1-31
BUX48
25C2964
1-31
BUX48A
25C2429A
1-31
BUX84
2503055
1~
BUX98
25C3058
1~1
BUX98A
2503058A
1~7
FTl551
FTl551
1-113
FT2551
FT2551
1-115
IR519
25C2964
1-31
MJ12020
25C3060
1~
MJ13015
25C3045
1-51
MJ13090
25C2964
1-31
MJ15015
25C2431
1-3
MJl5016
25A1041
1-3
BUX48A
2503844
25C3844
2-13
2503056
1-59
MJ16002
2503044A
1-45
MJ16004
25C3044A
1-45
2503949
2-37
MJ13070
MJ16006A
2503947
2~9
25C2965
1-31
MJ16010
MJ16010
viii
Power Transistor Cross Reference Index (Continued)
FM Replacement
Part Number
Industry Standard
EQUIVALENT
EXACT
Replacement
Page Number
M116018
Replacement
Page Number
2S03061
1-93
2S03846
2-21
M14502
2SA1043
1-7
M1802
2SC2433
1-7
2S03061
1-93
M18505
2SC3846
2-21
M1E13007
2S03057
1-75
M1E13007
2S03842
2-5
MJE16002
2S03056A
1-59
MJE16002
2S03949
2-37
M116018
M116110
M18505
2SC2964
2SC3061
1-31
1-93
MJE16004
2S03056A
1-59
M1E16004
2S03949
2-37
2-17
MJE16032
2S03845
M1E16106
2SC3057
1-75
M1E16106
2S03842
2-5
RCA8767AIB
2SC2964
1-31
RCA9113A1
82SC2964
25C2964
1-31
5DT13304
2SC2965
1-31
SDT13304
2SC3949
2-37
SGSF564
2S03061
1-93
SGSF564
2S03846
2-21
SVT7532
2S03044A
1-45
SVT7532
2S03056A
1-59
SVT7535
2S03044A
1-45
SVT7535
2S03056A
1-59
SVT7550
2SC2965
1-31
SVT7550
2S03949
2-37
SVT7551
2S02965
1-31
SVT7551
2S03949
2-37
SVT350-12
2SC2964
1-31
SVT7552
2SC2965
1-31
SVT7552
2S03949
2-37
SVT7554
2S02965
1-31
SVT7554
2S03949
2-37
/x
Power Transistor Cross Reference Index (Continued)
AI Replacement
Part Number
Induatry Standard
EXACT
Replacement
EQUIVALENT
Page Number
Raplacemant
Pag_Number
SVT7555
2S02965
1-31
SVT7555
2SC3949
2-37
SVT7560
2SC2965
1-31
SVT7560
2SC3949
2-37
SVT7570
2SC2965
1-31
SVT7570
2S03949
2-37
TIPL751A
2S03044A
1-45
TIPL751A
2S03056A
1-69
TIPL755A
2S02965
1-31
TIPL755A
2S03949
2-37
TIPL760A
2SC3044A
1-45
TIPL760A
2SC3056A
1-69
Jt
Fujitsu's Power Transistor Products
Introduction
Fujitsu manufactures a wide range of power actuators that
include: ring emitter transistors, darlington transistor arrays
and field effect transistor arrays.
The Power Transistor Product line offers devices for use in
applications that provide the designer with a complete
solution to the implementation of control systems, when
combined with Fujitsu's broad line of integrated circuit
technologies.
Ring EmHter Transistors (REn
RET devices offer significant improvement over conventional
power transistors due to their high speed switching
characteristics and large safe operating area. A typical RET
consists of several hundred multiple ring-emitters connected
to a common emitter electrode through diffused ballast
resistors. The RET structure is a superior transistor for motor
control and switch mode converter applications.
Darlington Transistor Arrays
These devices are ideally suited for todays multiple output
applications. Features include: large DC current gain and
large collector power dissipation. A fast recovery diode to
absorb flyback voltage is included, and fast switchinq speed
is also provided This array is well suited for motor drive
applications and terminal equipment where IC outputs must
be boosted to drive print hammers or solenoids.
Field Effect Transistor Arrays (FET)
FET arrays are faster easier to drive and in motor control or
switching power supply applications result in significant
parts-count reductions and higher overall efficiency.
Telecommunication applications require irJl)edance to be
strictly controlled in signal line interfaces; FET arrays offer
this control in solid state switching while providing more
reliability than traditional reed arrays.
xii
Section 1
R"ma Emltter Translstors -
A ta Glance
Maximum Rating.
YeEO(V) Ie (A)
Page
DavIca
C... (na)
Polarity
1-3
2SAl041
2SA1042
2SC2431
2SC2432
JEDEC TO-.'!
-120
2SA1043
2SA1044
2SC2433
2SC2434
JEDEC TO-.'!
1-11
2SA1072
2SA1072A
2SA1073
JEDEC TO-.'!
JEDEC TO-.'!
PNP
PNP
NPN
NPN
PNP
PNP
NPN
NPN
PNP
PNP
PNP
1-13
2SA10n
JEDEC T0-220
1-15
2SA1078
JEDEC T0-220
1-17
2SA1080
JEDEC T0-220
PNP
PNP
PNP
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
1-7
1-19
2SC2428
JEDEC TO-.'!
1-21
2SC2522
2SC2522A
2SC2523
JEDEC TO-.'!
JEDEC TO-.'!
1-23
2SC2525
2SC25:!6
RM-aO
1-25
2SC2527
JEDEC T0-220
1-27
2SC2528
JEDEC TO-22O
1-29
2SC2530
JEDEC TO-220
1-31
2SC2429
2SC2429A
2SC2920
2SC2964
2SC2965
JEDEC TO-.'!
1-45
2SC3044
2SC3044A
JEDEC TO-.'!
1-01
2SC3045
JEDEC TO-.'!
1-07
2SC3048
JEDEC TO-.'!
1-63
2SC3055
JEDEC TO-220
1-69
JEDEC TO-220
1-75
2SC3056
2SC3056A
2SC3057
1-81
2SC3058
JEDEC TO-.'!
1-87
2SC3058A
JEDEC TO-.'!
JEDEC TO-22O
-70
120
70
-120
-15
-15
15
15
120
70
-30
-30
30
30
120
150
160
12
12
12
120
10
-70
120
2
40
180
0.5
120
150
160
12
12
12
120
160
12
12
120
10
12
120
2
40
0.5
400
450
400
400
450
15
15
15
15
15
400
450
6
6
400
10
450
10
400
2
400
400
400
6
6
10
400
30
30
450
1-1
..
Section 1
Rina Emitter Transistors -
1-2
At a Glance (Continued)
Paga
Device
Caaa(na)
Polarity
1-93
2SC3059
2SC3060
2SC3061
2803178
JEDECTO--$
1-113
FTl551
JEDEC~
1-115
FT2551
JEDEC~
NPN
NPN
NPN
NPN
NPN
PNP
Maximum Radng.
Ie (A)
V CEO (V)
850
850
850
850
2
5
10
2
120
2
120
2
cP
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SA1041, 2SA1042, 2SC2431, 2SC2432
Silicon High Speed Power Transistor
DESCRIPTION
This series are silicon PNP/NPN planer general purpose. high power switching
transistors fabricated with Fujitsu's unique Ring Emitter Transistor (RET) tech·
nology. RET devices are constructed with multiple emitters connected through
diffused ballast resistors which provide uniform current density. This structure
permits the design of high power transistors with superior switching characteristics
and frequency response in high current applications.
This series are especially well-suited for high speed/high voltage switching systems
or other applications where large SOA is required.
..
OUTlINE DIMENSION
JEDEC TO-3
Features
*
*
*
*
*
*
2SA1041,2SA1042
2SC2431, 2SC2432
:
60MHz (typ.)
80MHz (typ.)
tr:
0.15/-1s (typ.)
0.20/-ls (tyP.)
t, :
0.24/-1s (typ.)
0.70/-ls (typ.)
t, :
0.08/-1s (typ.)
0.12/-1s (tyP.)
fT
Excellent Safe Operating Area:
2SA1041-2SC2431
Complements:
2SA 1042-2SC2432
1: Base 2: Emitter 3: Collector (Case)
Dimension in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS
Value
Rating
Value
Symbol
Unit
2SA1041
2SA1042
2SC2431
2SC2432
Collector to Base Voltage
VeBo
-120
-70
120
70
V
Emitter to Base Voltage
VEBO
-5
-5
5
5
V
Collector to Emitter Voltage
VeEo
-120
-70
120
70
V
Collector Cu rrent
Ie
-15
-15
15
15
A
Base Current
IB
-5
-5
5
5
A
Collector Power Dissipation (Te = 25°C)
Pc
100
100
W
Junction Temperature
Tj
Storage Temperature Range
Tst9
100
100
+175
+175
°c
-65~+175
-65~+175
°c
1-3
2SA1041, 2SA1042, 2SC2431, 2SC2432
ELECTRICAL CHARACTERISTICS (T. = 2S0C)
2SA1041,2SA1042
Limits
Parameter
Symbol
2SA1041
Test Conditions
Min.
Collector Cutoff Current
Collector Cutoff Current
I"BO
leBO
Emitter Cutoff Current
'EBO
Collector Cutoff Current
ICED
Collector Cutoff Current
Collector to Base Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
DC Current Gain
DC Current Gain
'CEO
VIBR)CBO
VIBR)EBO
VIBR)CEO
hFE
hFE2
Collector to Emitter Saturation Voltage
VeE sat)
Base to Emitter Saturation Voltage
VSE(sat
Gain-Bandwidth Product
Output Capacitance
Rise Time
Storage Time
Fall Time
IT
Cob
t,
t sta
t,
V"B = -120V,
VCB = -70V,
VEB = -4V,
VCE = -120V,
VCE = -70V,
Ic = -50jlA,
Ie"" -1mA.
Ic = lOmA,
VCE - -5V,
VCE = -5V,
Ic = -7A,
IE
IE
IC
IB
IB
IE
Ic
Unit
TVD. Max.
Min.
-50
=0
=0
=0
=0
=0
=0
=0
RBe -
2SA1042
TVD. Max.
-50
-50
-1
-50
-1
co
Ie = -1.5A·
Ic - -15A •
-120
-5
-120
35
200
-70
-5
-70
35
10
200
-0.6
-0.6
1.5
-1.2 -1.8
60
350
0.15 0.8
0.24 1.0
0.08 0.8
18 =...o.7A *
Ic=-lA
VCE - -10V,
V CB = -10V, IE =0,1= lMHz
Ic = -7.5A,
RL =40
IBl = -I B2 = -O.75A
pA
pA
pA
mA
mA
V
V
V
-1.2
60
350
0.15
0.24
0.08
-1.5
-1.8
0.8
1.0
0.8
V
V
MHz
pF
1"
1"
1"
2SC2431, 2SC2432
Limits
Parameter
Symbol
2SC2431
Test Conditions
Min.
Collector Cutoff Current
ICBO
Collector Cutoff Current
I CBO
Emitter Cutoff Current
lEBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
ICED
VeBR CBO
VIBR)EBO
VIBR)CEO
Collector to Base Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
VCB = 120V,
VCB = 70V,
VEB=4V,
VCE = 120V,
VCE - 70A,
Ic = 50jlA,
IE =lrnA,
Ic = lOmA,
DC Current Gain
hFE1
VCE =.5V.
DC Current Gain
hFE2
VCE=5V,
Collector to Emitter Saturation Voltage
Base to Emitter Satu ration Voltage
Gain..eandwidth Product
VCE(satl
VSE(sat)
Rise Time
IT
Cob
t,
Storage Time
t stg
Output Capacitance
Fall Time
t,
Ic=7A,
IE
IE
Ic
IB
=0
=0
=0
=0
-
50
1
Min.
-
-
'E = 0
IC=O
RBE
:::00
Ic = 1.5A·
I c =15A'
-
Ic = 7.5A, RL =40
IS1 = -I B2 = 0.75A
-
jlA
50
50
I'A
jlA
rnA
rnA
V
V
V
1
120
5
120
35
7
'a=O.7A*
VCE = 10V,
Ic = lA
VCB = 10V, IE = 0, 1= lMHz
Unit
Typ. Max.
's=O
-
-
200
0.4
1.2
80
200
0.20
0.70
0.12
* Pulsed Pw
1-4
2SC2432
Typ. Max.
- 50
1.6
1.8
0.8
1.0
0.8
70
5
70
35
10
-
-
-
200
0.4
1.2
80
200
0.20
0.70
0.12
1.5
1.8
0.8
1.0
0.8
~ 300 IJ, Duty Ratio ~ 6%
V
V
MHz
pF
jl'
jl'
I'S
2SA1041 , 2SA1042, 2SC2431, 2SC2432
2SA1041 , 2SA1042
2SC2431, 2SC2432
DC CURRENT GAIN
DC CURRENT GAIN
e';~5"C
~200
.c
V E = 5V
.~ 100
C)
c
,~
"
g
10 -0.02 -0.05 -0.1 -0.2 -0.5 -1
-2
-5
10
50
20
10
\.
0.02 0.05 0.1 0.2
Collector Current Ie (A)
w
u
> -O.2J--++++t+tH---+--+-H+tI+t--b"l-+t+ttH----l
. .N./
-0.1~~~~II~lt-l~~1'I·~"II~~
5 -0.05
g
.~
..
:il-O.02~j;;tgmt=;;i;;±:J;;l;t±Jt=;p:tt±l±!t:::j
-0.02 -0.05 -0.1 -0.2
-0.5 -1
-2
10
2
SATURATION VOLTAGE
Te=25"e1IIIIIIIa"le/10 ,
i ~~~i!~ii~~~v~~n~!I';~~!iiir~
~
t
1
Collector Current Ie IA}
SATURATION VOLTAGE
j
0.5
-5 -10
~
]
w
>'"
]
Te =2S"Cla = lel10
IIIII
l'
a1 1
llll
1
w 0.5
~
t
0.2
gc
O. 1
III ..'\
-J~
o
.j; 0.05
5
:il 0.02
0.02 0.05 0.1 0.2
0.5
1
2
5
10
Collector Current Ie tA)
Collector Current Ie (A)
SAFE OPERATING AREAS
SAFE OPERATING AREAS
-20I-H-++1OtI--n:t-+-It1-t1m' 25' C
'v~ N ~II
~
S'
-1°~11~~&;~~1===~=~
5
0
"
5
f.IJ[~ =25"C
~~ ~~~~
2
1
Du tv Cycle =1 1/100
5
!:j
o. 2
-5 -10 -20
-50 -100-200
Collector-Emitter Voltage VeE (V)
10
20
fj-
~ ~
50 100 200
Coliector·Emitter Voltage VeE tV)
1-5
..
2SA1041, 2SA1042, 2SC2431, 2SC2432
~
~
2SA1041.2SA1042
2SC2431. 2SC2432
GAIN BANDWIDTH PRODUCT
GAIN BANDWIDTH PRODUCT
~0H+~~~~~~~
01:-100
£~.
~!
50
~
~
!:
10~~0~.1~0~.2~~0~.S~~~~~~W
8 10WU~~~~~~~~~~~~
Collector Current Ie (A)
Collector Current Ie (A)
0: 2000
OUTPUT CAPACITANCE
tC"2~C
IE~O~
f-1M z
.!;
.01000
cJ
~
500
r-.
l!
.~
13
~
0
-20
-SO -100
Collector-Base Voltage V eB (V)
200
.................
100
50
10
20
50
SWITCHING TIME
SWITCHING TIME
s
O.I~n
o.osEl:!!ll==
-1
-2
-5 -10 -20
Collector Current Ie (A)
1-6
100
Collector-Base Voltage V eB (V)
0.1~.
o.os~
O.S
1
10
20
Collector Current Ie (A)
00
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SA 1043, 2SA 1044, 2SC2433, 2SC2434
Silicon High Speed Power Transistor
DESCRIPTION
This series are silicon PNP/NPN planer general purpose, high power switching
transistors fabricated with Fujitsu's unique Ring Emitter Transistor (RET) tech·
nology. RET devices are constructed with multiple emitters connected through
diffused ballast resistors which provide uniform current density. This structure
permits the design of high power transistors with superior switching characteristics
and frequency response in high current applications.
This series are especially well-suited for high speed/high voltage switching systems
or other applications where large SOA is required.
OUTLINE DIMENSION
JEDEC TO-3
Features
*
*
*
t,
2SA1043,2SA1044
2SC2433, 2SC2434
60MHz (typ.)
BOMHz (typ.)
0.20/.ls (typ.)
0.2B /.lS (typ.)
0.24/.ls (typ.)
0.70/.lS (typ.)
O.OB /.lS (typ_)
0.15/.ls (typ.)
Excellent Safe Operating Area:
2SA 1043-2SC2433
Complements:
2SA1044-2SC2434
1: Base 2: Emitter 3: Collector (Case)
Dimension in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS
Value
Rating
Value
Symbol
Unit
2SA 1043
2SA1044
2SC2433
2SC2434
Collector to Base Voltage
V CBO
-120
-70
120
70
V
Emitter to Base Voltage
VEBO
-5
-5
5
5
V
Collector to Emitter Voltage
VeEo
-120
-70
120
70
V
Collector Current
Ie
-30
-30
30
30
A
Base Current
IB
-10
-10
10
10
A
Collector Power Dissipation (Tc = 25°C)
Pc
150
150
W
Junction Temperature
TJ
Storage Temperature Range
T stg
c.pynght@ 'lID by FUJITSU UIIlED _
Fu,..., _
150
150
+175
+175
°c
-65-+175
-65-+175
°c
.......
1-7
2SA1043, 2SA1044, 2SC2433, 2SC2434
ELECTRICAL CHARACTERISTICS (T.
= 25°C)
2SA1043,2SA1044
Limits
Parameter
Symbol
Collector Cutoff Current
leBO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
lEBO
Collector Cutoff Current
'CEO
Collector Cutoff Current
Collector to Base Breakdown Voltage
'CEO
V(SR)CSO
Emitter to Base Breakdown Voltage
V(SR ESO
Collector to Emitter Breakdown Voltage
V(EiR)CEO
DC Current Gain
hFE1
DC Current Gain
hFE2
Collector to Emitter Saturation Voltage
VeE sat
Base to Emitter Saturation Voltage
VSE(sat)
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Rise Time
Storage Time
tstQ
Fall Time
"
2SA1043
Min. TYp· Max.
Test Conditions
VCS - -120V,
VCS - -70V,
VES - -4V,
VCE = -120V,
VCE - -70V,
Ic - -50~A,
IE - -lmA,
Ic = -10mA,
IE - 0
IE - 0
-50
Ic - 0
Is - 0
Is - 0
IE 0
-50
-1
2SA1044
Typ. Max.
-50
-50
-1
Ic - 0
RBE -
Min.
con
VeE = -5V,
V CE--5V,
Ie = -3A
Ie = -15A,
Is = -1.5A'
*
-120
-5
-120
35
70
-5
-70
200
Ie - -30A *
35
Unit
-50
I'A
I'A
mA
mA
V
V
V
200
10
-0.7
1.2
VCE - -10V,
Ic - -2A
VCS - -10V, IE-O, f-1MHz
60
600
Ic = -15A, RL = 2n
IS1 =-I S2 =-1.5A
0.20
0.24
0.08
'f
-1.5
-2.0
-0.5
-1.1
-1.-5
2.0
60
700
V
V
MHz
pF
0.8
1.0
0.20
0.24
0.8
1.0
1"
0.8
0.08
0.8
1"
1"
2SC2433, 2SC2434
Limits
Parameter
Collector Cutoff Current
Collector Cutoff CUrrent
Symbol
'CBO
I CBO
Emitter Cutoff Current
lEBO
Collector Cutoff Current
'CEO
Collector Cutoff Current
Collector to Base Breakdown Voltage
'CEO
V BR CBO
Emitter to Base Breakdown Voltage
V(BR EBO
Collector to Emitter Breakdown Voltage
V(SR)CEO
DC Current Gain
hFE1
DC Current Gain
hFE2
Collector to Emitter Saturation Voltage.
VCE(sat)
Base to Emitter Saturation Voltage
VSE!s.t)
fT
Gain-Bandwidth Product
Output Capacitance
Cob
Rise Time
"
t stg
Storage Time
Fall Time
'f
Test Conditions
VCS = 120V,
VCS - 70V,
VES = 4V,
VCE = 120V,
ICE = 70V,
Ic - 50l'A,
IE -lmA,
Ic -10mA,
V C E-5V,
VeE 5V,
Ic = 15A,
IE
IE
Ie
IS
=
0
0
0
0
Is -0
IE 0
Ic -0
2SC2433
Min. Typ. Max.
50
-
oon
,
IC =3A
Ic = 30A *
7
Ie = 15A, RL = 2n
IS1 = -IS2 = 1.5A
-
-
-
200
0.5
I B =1.5A*
IC 2A
VeE 10V,
Vcs=10V, IE=O, f=lMHz
50
1
-
1.2
80
-
350
0.28
0.70
0.15
70
5
70
50
50
-
Unit
I'A
I'A
I'A
mA
mA
V
V
V
200
0.5
-
1.2
80
350
-
0.28
0.70
0.15
0.8
1.0
0.8
-
35
10
1.5
2.0
-
-
-
* Pulsed P w ~ 300 /.LS, Duty Ratio
1-8
-
-
1
120
5
120
35
RBE -
-
2SC2432
Typ. Max.
Min.
1.5
2.0
-
V
V
MHz
pF
0.8
1.0
1"
0.8
1"
~ 6%
1"
2SA1043, 2SA1044, 2SC2433, 2SC2434
2SC2433,2SC2434
2SC1043,2SA1044
DC CURRENT GAIN
DC CURRENT GAIN
1
w
1" 200
'"
c
50 . . -
u
u
201----1--
~
Cl
10
t:--
-:[
f--I
.~ 100
Te=25bC
VeE =-5
··.·-F·'
-f-
11
1-.
l··
.~
-0.02 -0.05 -0.1-0.2
0.5
-2
1
-5 -10 -20
201----l--50
10
1\
0.02 0.05 0.1 0.2
Collector Current Ie (Al
·m . I
11
i 1~~l·····±···rrnmr!1'1Jn~I~ElIJll[t.~1!IV~~1
r ;
1
w -O.5
I :~c+' {![bl.".~ m~ ·j· j..-'~II'I
.g -0.05
~
t~~
It
.
~II
~tf-Ilil-
t-
.
.;J -O.02t;t:tj:mtttt~tIjjtttJt=t±ijj±tij;;=ttl;j
-0.02-0.05-0.1-0.2 -0.5 -1
-2
-5 -10 -20
SAFE OPERATING AREAS
-50
]
1
0,5
w
u
>
j
"0
>
g
."
~
~
III
0.2
2
~
-1iJir-
R~
~.,,~
-
O. 1
0.02 0.05 0.1 0.2
5
--t- .
I
lOut y Cycle = 1 100
8 -0. 5
0.5
.
-0. 2
-5 -10 -20
0
0
2
.
1
1--
5
Coliector·Emitter-Voltage VeE (V)
10
1
20
50
SAFE OPERATING AREAS
l-
..! ~
:t
!!l
~
-50-100-200
III
Col/ector Current tA)
5
..
2
j
I~I~~~"~
0.05
Te = 2sOC
l~:~·
-20
viif
~tlllll!!
w
>'"
0
~ -1 0
50
Te = 25"C
18 = 'e110
WIIlL
~
Collector Current Ie (A)
-50
20
10
2
SATURATION VOLTAGE
Te=25°C
I. = 'e110
11--.
1--- . . .
-2---
1
Collector Current {A)
SATURATION VOLTAGE
~
0.5
Tc =25"C
~.....~&'~II
i\. r\ ~,,;)
j-.
Du ty Cycle = 1/166
... l:j
N~.
o. 2
10
20
1* ~
50 100 200
Collector-Emitter-Voltage VeE (V)
1-9
2SA1043, 2SA1044, 2SC2433, 2SC2434
2SA 1043, 2SA1044
2SC2433,2SC2434
GAIN BANDWIDTH PRODUCT
GAIN BANDWIDTH PRODUCT
"B
g 2OOUlllL.
Tc = 2flo~~H
.f:I
TC· 25"C
V 0 -10V
.11
Vco=-10V
£NI001=·":·I~
r
.-
'C:!E
' j - 50
].t"
III
20
c
~
0
r
10
-0.1 -0.2
-2
-0.5 -1
-5
0.1
0.2
0.5
2
1
10
Collector Current Ie (AI
-10
Collector Current Ie (AI
OUTPUT CAPACITANCE
5000
Te -25"C
10 =0
f= lMHz
iC
.e
-
..c 2000
UO
g 1000
~
.~
500
Cl
-: 1000E-~~fj~m14
cJ
IB
500
l
200
~
(3
c:l
~
OUTPUT CAPACITANCE
iC2000r--'-'-rrnTIT---r-r~~~~
200
o
-1
-2
-5
-10 -20
Collector-Base-Voltage
-50 -100
Collector-Sase-Voltage VCA (V)
Vee (V)
SWITCHING TIME
SWITCHING TIME
. e=2~_C
Vee =:lIlV
Te=25"~!
Vee
IBI
=-JOV
5
= -Ie, "" Ici1~
1st
1
1
i=
go
II
~ o. 1
JII o.
'\t
~
0.05
-0.5 -1
-2
V[\
~
II
-5 -10 -20
Collector Current Ie (AI
1-10
Ir.
EO. 5
0.5
:E 0.2
II ItI
2
.....
~
lSI"" -l s2 "" le/10
-50
/
2
o. 1
0.0 5
0.5
~
Y'I
10
20
Collector Current Ie {AI
50
OJ
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SA 1072, 2SA 1072A, 2SA 1073
Silicon High Speed Power Transistor
DESCRIPTION
The 2SA107212SA1072A12SA1073 are silicon PNP general purpose, high power
swkching transistors fabricated wkh Fujksu's unique Ring Emitter Transitor (RET)
technology. RET devices are constructed with multiple emitters connected through
diffused ballast resistors which provide unHorm current densky. This structure
permks the design of high power transistors wkh exceptional swkching characteristics and frequency response in high current applications.
OUTLINE DIMENSION
JEDEC TO-3
The 2SA 107212SA1072A12SA 1073 are especially well-suked for high frequency
power amplHiers, audio power amplHiers, switching regulators and DC-DC
converters. NPN complements, 2SC252212SC2522A12SC2523, are available.
High IT - 60 MHz (typ)
Ultra last swkching speed
•
•
Excellent safe operating area
Improved reverse second-breakdown
capabilky
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Unit
value
2SA1072 2SAl072A 2SAl073
Collector 10 Base Voltage
VCBO
Emitter 10 Base Voltage
VEBO
120
7
150
7
160
7
Collector 10 Emil19r Voltage
VCEO
120
150
160
V
Ic
12
12
12
A
Pc
TI
Tatg
120
120
120
Collector Current
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta
+150
-6510+150
V
V
1: Emitter 2: S ... 3: CollectOr (CI881
W
Dimension in inches and (mlilimete,..1
°c
°c
=25°C)
Uml..
2SA107212SA1072A
Parameter
Symbol
Teat Condition.
Collector Cutoff Currant
ICBO
Vea = 12OVlI60V,IE=0
Emil1er Culoff Current
lEBO
VES =7V,lc=0
Collector Cutoff Current
ICEO
Vr'S' = 12OVlI60V, R... = ..
Collector 10 Base Breakdown Voltage
V(BR)CBO Ic =50 IJA,IE = 0
Emitter to Base Breakdown Voltage
V(SR)EBO IE=50JIA.Ic=O
Collector 10 Emil19r Breakdown Voltage
V(SRICEO Ic= 1 mAo RBE="
DC Current Gain
hFE1
VCE=SV. Ic= 1 A*
Min.
-
50/-
-
50
-
1/-
-
--;sr -
-
160
-
-
7
120
7
120
--;sr 60
DC Current Gain
hFE2
VCE=SV.
10- 7 A*
40
Collector 10 Emll19r Saturation Voltage
VCE(aaI)
Ic·SA,
IB-O.S A*
Base 10 Emitter Voltage
VBE
V.... =5A.
-
Gain-Bandwidth Product
Output Capecitance
IT
VCE = 10 V. Ic = 1 A. I = 10 MHz
Vea = 10 V. IE. O. I = 1 MHz
Cab
Rise lime
t,
Storage lime
Ieog
.
~
Fall lime
Pulsed. Pulse width ~ 300J!S; Duty Cycle ~ 6%
t For 2SA 1072A only
,CopyrIgJoA@, •
1,,-5 A*
Ic= 7.SA. FiL=40
IB1 = -182 = 0.75 A
2SA1073
Typ. Max. Min.
45
-
Typ. Max.
Unit
-
-150
JIA
50
JIA
-
-11
mA
-
V
-
V
-
V
200
V
-
160
-
200
60
0.9
1.8
-
09
1.8
1.25
60
1.7
1.7
45
1.25
60
300
470
300
470
pF
0.15
-
0.15
-
J!S
-
J!S
J!S
40
0.5
0.11
-
-
0.5
0.11
-
V
MHz
..,FIJITlIU UWTED ond """'" _ - . . . . . . ....
1-11
2SA1072,2SA1072,2SA1073
GAIN BANDWIDTH PRODUCT
Jc !!-'10V
0.5
1
:l
"
I;
I C. Collector Current (AMP)
.,
..
u
'c. Collector Current (AMP)
OUTPUT CAPACITANCE
"COLLECTOR SATURATION VOLTAGE
r"m. .
~~~
t
'I
&00
u
! ~~~---+-+-+++tHt-~~~-HiTH
8
""Billa
.g
u
,
V ca. Collector Base' Voltage (VOLTS)
Ie. Collector Currant (AMP)
SWITCHING TIME
SAFE OPERATING AREAS
"
~
"
,
.,,;>.~
~
III
TC=:iI6:t;
~~il
PuIS.
"',
~
'~t=
"
,
"
0e-
:1--
,
.
,
,
11.6
1
6
10
Ie. Collector Currant (AMP)
1-12
r
.
"
SI"~
2SA107~
. l~um ,.
~
~
VeE. Collector-Emitter Voltage (VOLTS)
cP
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SA1077
Silicon High Speed Power Transistor
DESCRIPTION
The 2SA 1077 is silicon PNP general purpose, high power switching transistors
fabricated with Fujitsu's unique Ring Emitter Transistor (RET) technology. RET
devices are constructed with multiple emitters connected through diffused ballast
resistors which provide uniform current density. This structure permits the design
of high power transistors with exceptional switching characteristics and frequency
response in high current applications.
The 2SA 1077 is especially well·suited for High frequency power amplifiers, Audio
power amplifiers, Switching regulators and DC-DC Converters.
A NPN complement, 2SC 2527, is available.
•
•
•
•
..
OUTLINE DIMENSION
JEDEC TO·220
High fT = 60 MHz (typ)
Ultra fast switching speed
Excellent Safe Operating Area
Improved reverse Second-Breakdown Capability
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector to Base Voltage
V CBO
120
V
Emitter to Base Voltage
VEBO
7
V
Collector to Emitter Voltage
V CEO
120
V
Rating
Collector Current
Collector Power Dissipation ITc
= 25"C)
Junction Temperature
Storage Temperature Range
Ic
10
A
Pc
60
W
Tj
lS0
Tstg
-6S-+1S0
°c
°c
1: B... 2: Collector 3: Emitter
Dimension in inches and {millimetert!.
ELECTRICAL CHARACTERISTICS (T. = 25°C)
Limits
Parameter
Unit
Test Conditions
Symbol
Min.
Typ.
Max.
Collector Cutoff Current
ICBO
VCB = 120V,
IE = 0
SO
Emitter Cutoff Current
lEBO
VEB = 7V,
IC = 0
SO
VCE = 120V,
IB = 0
Collector Cutoff Current
Collector to Base Breakdown Voltage
'CEO
. - f--'"
__ c-"<"~CBO
Ic
=
SO~A,
IE = 0
~~~)~_BO_
IE
=
SO~A,
IC =0
V(B~)CEO
Ic
"" 1mA,
Emitter to Base Breakdown Voltage
.~
Collector to Emitter Breakdown Voltage
DC Current Gain
hFE1
DC Current Gain
Collector to
Emi~er
hFE2
Saturation Voltage
Base to Emitter Voltage
Gain-Bandwidth Product
Output Capacitance
Rise Time
Storage Time
Fall Time
VCE(sat)
V BE
VCE = 5V,
VCE = SV,
Ic
= SA,
VCE = SV,
RBE ""
V
00
60
Ic = SA
40
200
I B = O.SA
0.9
1.8
V
Ic = SA
1.25
1.7
V
V CE=10V,IC=lA, f = 10MHz
"
V
120
Ic = lA
VCB = 10V, IE =0, f= lMHz
Copyr'ght@ 'Il10 III' FU.mIU U..TED .... ""'IOU - " " ' " 1nc.
V
120
fT
'st.
~A
mA
Cob
t,
~A
I C = 7.SA, RL = 4n
lB. = -IB2 = 0.7SA
30
MHz
60
300
O.lS
470
pF
~s
O.S
~S
0.11
~s
... Pulsed: Pulse Width ~ 30fl1,t.s
Duty Cycle ~ 6%
1-13
2SA1077
,.,.,rm",.,O:,.U,.T,...PUT CAPACITANCE
.c
o
u
veB, Collector Base Voltage (VOLTS)
SWITCHING TIME
VBE, Base Emitte r Voltage (VOLTS)
1-14
Ie. Collector Currant (AMP)
cP
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SA1078
Silicon High Speed Power Transistor
DESCRIPTION
The 2SA1078 is a silicon PNP general purpose, medium power transistor fabricated
with Fujitsu's unique Ring Emitter Transistor (RET) technology. RET devices are
constructed with multiple emitters connected through diffused ballast resistors
which provide uniform current density. This structure permits the design of medium
power transistors with exceptional frequency response in high current applications.
The 2SA1078 is especially well·suited for High frequency power amplifiers, Audio
power amplifiers and drivers.
A NPN complement, 2SC2528, is available.
•
•
•
•
..
OUTLINE DIMENSION
JEDEC TO·220
High fr = 140 MHz (typ)
Excellent Safe Operating Area
Improved reverse Second·Breakdown Capability
Excellent Current Gain linearity
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Collector to Base Voltage
V CBO
120
V
Emitter to Base Voltage
V EBO
5
V
Collector to Emitter Voltage
VCEO
Unit
120
V
Collector Current
IC
2
A
Collector Power Dissipation ITc "" 25°C)
Pc
25
W
Junction Temperature
Tj
150
T stg
-65-+150
'c
'c
Storage Temperature Range
1: B_ 2: Collector 3: Emitter
Dimension In inches and (millimeters)
ELECTRICAL CHARACTERISTICS (T. = 25°C)
Limits
Parameter
Test Conditions
Symbol
Unit
Min.
Typ.
-
1
"A
-
1
"A
-
100
"A
-
V
Collector Cutoff Current
'eBO
V CB = 120V,
iE =0
Emitter Cutoff Current
lEBO
V EB = 5V,
iC=O
Collector Cutoff Current
'CEO
VCE = 120V,
i'B= 0
-
Collector to Base Breakdown Voltage
V(BR)CBO
IC
= I/lA,
IE = 0
120
Emitter to Base Breakdown Voltage
V(BR)EBO
IE
= I"A,
IC= 0
5
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC == lmA,
R Be =
120
00
Max.
-
V
V
DC Current Gai n
hFEl
VCE= 5V,
IC = 0.3A'
60
. DC Current Gain
hFE2
VCE= 5V,
Ic = 0.7A'
50
18 = O.07A*
_.
0.45
1.0
0.8
1.7
V
-
140
-
MHz
100
-
pF
Collector to Emitter Saturation Voltage
VCE(sat)
Base to Emitter Voltage
VBE
Gain-Bandwidth Product
fT
Output Capacitance
Cob
Copyrlght@II1OIorFI/JIT8UUllllED_FuJ1ou _ _ Inc.
iC
~0.7A,
VCE = 5V,
Ic = 0.7A'
VCE=l OV ,1 C=0.5A,f=10MHz
V CB =20V .iE=O,f=l MHz
350
V
* Pul$ed: Pulse Width :s; 300,u.s
Duty Cycle ~ 6%
1-15
2SA1078
_ ,.• .....,r-<-r-,..--r~OrU...,T_P-rU_T.,-,CHARACTrE...,R"I"S,..T"TICS..",.""""....--,-.,..-'"r"l
t:tj:::t~~~:::tj:::t~:::~~
'l: uHHH-+++±,.o..,;iI:I!I
"1111
~
~:
~
u ...
SII.II
U~ 0.2
E
00
E
~::"·H-+-++H
i
u~
I
l
a
(
6
6
1
'0
VeE. Collector-Emitter Voltage
(VOe TS)
VCS- 10V-
:-
..
,,~t--++++-l
~
~.
'
~
8...
"
so..
t
~::
U.
1
8 '-49
GAIN BANDWIDTH PRODUCT
r-ri~t+Ht--i-i-rh
E
IqoA
-'If:':
0.2
°0
10
20
30
'"
50
60 ' - :
80
-!
100
VeE. Collector-Emitter Voltage
(VOe TS)
m.~m,L~.~*~~.~,--~,,~~~~~,--~~
Ie. Collector Current (AMP)
COLLECTOR SATURATION VOLTAGE
DC CURRENT GAIN
~~Mm~~~~~W~~'±~~~'M~~'~'~~U~~~~~-7~
Ie. Collector Current (AMP)
SAFE OPERATING AREAS
0:-
~ 'H-I,*"~+-I'\,
c
~
u
e
¥
~ o.2rH~--++~Hf~~
u
9
~~.I~,,§~.~l.~_,oo~~_
VeE. Collector-Emitter Voltage
~'.~~~~,.~.~~~~,~,~~~
VSE. Sase-Emitter Voltage (VOLTS)
1-16
(VOeTS)
cP
Janual}' 1990
Edition 1.1
FUJITSU
PRODUCT PROFILE
2SA10BO
Silicon High Speed Power Transistor
DESCRIPTION
The 2SA 1080 is • silicon PNP M.C.·Head amplifier use transistor fabricated with
Fujitsu's unique Ring Emitter Transistor (RET) technology. RET devices are
constructed with multiple emitters connected through diffused balast resistors
which provide uniform current density. This structure permits the design of
M.C.-Head amplifier use transistors with exceptional frequency response along with
excellent current gain linearity.
..
OUTLINE DIMENSION
JEDEC TO·220
A NPN complement, 2SC 2530, is available .
• High f T =30MHz (TYP.)
• Excellent Current Gain-Linearity
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector to Base Voltage
V CBO
40
V
Emitter to Base Voltage
VEBO
7
V
Collector to Emitter Voltage
VCEO
40
V
Collector Current
IC
0.5
A
Collector Power Dissipation (T C = 25" C)
Pc
20
W
+150
"C
"C
Rating
Junction Temperature
Tj
Storage Temperature Range
Tstg
-65-+150
1: Ba.. 2: Collector 3: Emitter
Dimension In inches and (mililmeters), . y
ELECTRICAL CHARACTERISTICS (T.
Limits
Parameter
Test Conditions
Svmbol
Unit
Typ.
Max.
leBo
Vcs =4OV,
IE = 0
-
-
100
nA
lEBO
VEB =7V.
Ic =0
-
100
nA
ICEO
VCE =40V,
Min.
Collector Cutoff Current
Emitter Cutoff Current
IB = 0
-
-
500
nA
Collector to Base Breakdown Voltage
V(BR)CBO
Ie
= 100nA.
IE = 0
40
-
-
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE = 100nA,
IC =0
7
-
V
40
-
-
100
-
350
-
-
0.025
0.5
V
-
0.65
1.0
V
VCE-10V.lc=10mA.I=10MHz
-
30
-
MHz
VCB=20V,I E-0.1-1MHz
-
65
-
pF
Collector Cutoff Current
Collector to Emitter Breakdown Voltage
DC Current Gain
V(BR)CEO
hFE
Ic=1mA.
VCE
=5V.
RBE
=00
Ic = 10mA
Collector to Emitter Saturation Voltage
VCE(sat)
IC= 10mA,
IB=1mA
Base to Emitter Saturation Voltage
VBE(sat)
Ic = 10mA.
Is= 1mA
Gain-Bandwidth Product
IT
Output Capacitance
Copyrighl@' ... ..,FWITSII UonED _
Cob
fIt1aU _
..... Inc.
·
·
·
-
V
* Pulsed: Pulse Width ::; 300~s
Du,y Cycle if 6%
1-17
2SA1080
DC CURRENT GAIN
GAIN BANDWIDTH PRODUCT
Ie. Collec:tor Current (rnA)
Ie. Collector Current (rnA)
Vea, Collector Base Voltage (Va L TS)
,.-.
~,
. ~
Ie. Collector Current (rnA)
1-18
OJ
January 1990
Edition 1.1
FUJITSU
PRODUCT PROFILE
2SC2428
Silicon High Speed Power Transistor
DESCRIPTION
The 2SC 2428 is a silicon NPN general purpose, high power switching transistor
fabricated with Fujitsu's unique Ring Emitter Transistor (RET) technology. RET
devices are constructed with multiple emitters connected through diffused ballast
resistors which provide uniform current density. This structure permits the design
of high power transistors with exceptional switching characteristics and frequency
response in high current applications.
OUTLINE DIMENSION
JEDEC TQ-3
The 2SC 2428 is especially well·suited for High frequency power amplifiers, Audio
power amplifiers, Switching regulators and DC-DC Converters.
•
•
•
•
I-----t---i-i
High fT = 80 MHz (typ)
Ultra fast switching speed
Excellent Safe Operating Area
Improved Reverse Second-Breakdown Capability
~~==~~
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Collector to Base Voltage
V eBO
180
V
Emitter to Base Voltage
VEBO
7
V
Collector to Emitter Voltage
V eEO
180
V
Rating
Unit
Collector CUrrent
Ie
12
A
Base Current
IB
3
A
Collector Power Dissipation (Tc
= 25°C)
Pe
120
W
Tj
+175
T sts
-65---+175
°c
°c
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
CT. ,. 2S0C)
Limits
Parameter
Test Conditions
Symbol
Unit
Min.
Collector Cutoff Current
leBO
VeB-l80V.
IE -0
Em itter Cutoff Current
lEBO
VEa' 7V.
Ie -0
ICEO
VeE-180V,
la - 0
Collector Cutoff Curre!lt
Collector to Base Breakdown Voltage
V(BR)CBO
Ie
- 5o,.A. "IE =0
Emitter to Base Breakdown Voltage
VlaRIEaO
IE
=lmA,
Collector to Emitter Breakdown Voltage
VIBRleEO
Ie
-lOrnA, RBE =00
Typ.
Max.
50
mA
180
V
180
V
V
Ic- O
DC Current Gain
hFE1-
VeE- 5V.
Ie -0.5A
35
DC Current Gain
hFE2
VeE-5V.
Ie -5A
15
110
200
Collector to Emitter Saturation Voltage
VCE(sat)
Ie
- 5A,
la- 1A
0.3
O.S
Base to Emitter Saturation Voltage
VSE(sat)
IC
- 5A.
la -lA
1.15
1.5
Gain-Bandwidth Product
Rise Time
Storage Time
Fall Time
'T
"
tst9
'f
COPY'lght© 1180 by FWITSU UIlITED one! Fup..u _OOI_onl... Inc.
VeE-l0V.le-1A,I-l0MHz
le- 7 .5A,
RL -4n
lal ~ -l a2 - 0.7SA
p.A
mA
40
V
V
MHz
80
p.s
0.2
1.0
0.6
1.2
p.s
0.15
1.0
p.s
.
Pulsed: Pulse Width S 300SlS
Duty Cycle ~ 2%
1-19
..
DC CURRENT GAIN
GAIN BANDWIDTH PRODUCT
Ie. Collector Currant (AMP)
Ie. Collector Currant (AMP)
o
'ii
"::
~
o
o
c
W
..
z:
SATURATION VOLTAGE
""'l'Z71,"",,",,!l""ITlJ
.
OUTPUT CAPACITANCE
veB. Collector Base Voltage (Ve L TS)
Ie. Collector Currant (AMP)
SAFE OPERATING AREAS
SWITCHING TIME
Ie.
1-20
Collector Current (A~P)
VeE. Collector-Emitter Voltage (VOLTS)
cP
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC2522, 2C2522A, 2C2523
Silicon High Speed Power Transistor
DESCRIPTION
The 2SC252212SC2522A12SC2523 are silicon NPN general purpose, high power
swttchingtransistors fabricated wtth Fujttsu's unique Ring Emitter Transitor (RE1)
technology. RET devices are constructed with muRipIe emitters connected
through diffused ballast resistors which provide unHorm current density. This
structure permits the design of high power transistors with exceptional switching
characteristics and frequency response in high current applications.
..,..
High Ir - 80 MHz (typ)
URra fast switching speed
n
~u
...,.. -
The 2SC252212SC2522A12SC2523 are especially well-suited for high frequency
power amplHiers, audio power amplHiers, switching regulators and DC-DC
converters. PNP complements, 2SA107212SA1072A12SA1073, are available.
•
..
OUTLINE DIMENSION
JEDEC TO-3
,
=
..!
!~
' o.oawn.
Excellent safe operating area
Improved reverse second-breakdown
capability
ABSOLUTE MAXIMUM RATINGS
Ra.lng
Symbol
Valu.
Unit
2SC2S22 ~522A 2SC2523
120
150
160
V
7
7
7
V
120
150
160
V
12
12
12
A
Collector 11> Base Voltage
VCBO
Emitter 11> Base Voltage
VEBO
Collector 11> Emitter Voltage
VCEO
Collector Cumont
Ie
,Collector Power Dissipation (Tc = 25"C) Pc
TI
Junction Temperatura
S1Ilrege Temperature Range
TIIIg
ELECTRICAL CHARACTERISTICS (1.
Parameter
120
+150
-Qi1O+150
1: Emitter 2: Base 3: Colloctor (Casel
W
Dimension in inches and (millimeters)
"C
"C
=25°C)
Symbol
T••• Conalt......
Umlll
2SC252212SC2S22A
2SC2523
IIln.
Typ. lIax. Unit
Typ. Max. IIln.
Collector CU1Ilff Curran.
leBO
VC!I • 120VI160V, IE·O
-
Emil1er Cu1l>ff Cumon.
VEB-7V Ie-O
-
CoKec1Ilr CU1Ilff Curren.
lEBO
ICEO
Collector 10 Base Breakdown Voltage
V(8A)CBO Ic- 50 IlA.IE=O
Emil1er 10 Base Braakdown Voltage
V(8R)EBO IE=50IIA.lc=O
'::o11ec1llr 11> Em,itter Breakdown Voltage
V(8R)CEO Ic= 1 mAo Rae="
DC Cumon. Gain
hFEl
DC Cumon. Gain
hFE2
VCE=5V. Ie = 1 A·
VCE=5V. 1e;,7 A·
Collec1or 10 Emil1er Saturation Voltage
VCE("""
Ic-SA.
Base 10 Emitter Voltage
Vae
Gain-Bandwidth Product
Output Capacitance
fr
VCE=5V. Ic=5 A·
VCE = .10V.1c:' = 1 A, f.l0MHz
Vea .10V.IE .0. f= lMHz
Ri... T"""
Storage Time
Fan lime
Co!!
....
-
.Y
I
120
120
VCE = 120VlI60v. RaE - ..
IB=O.Sr A·
Ic=7.SA. Rt.=4Q
IBI = -l82 • 0:1:5 A
-
120
1sd
-,
- -
-150
IlA
-
-
50
IlA
-
-11
mA
-
160
-
160
-
-
V
7
-
501-
50
1/-
7
-
~
Isd
60
-
200
60
40
-
40
-
-
0.7
1.8
-
0.7
1.25 1.7
80
180 300
-
1.25 1.7
80 ,180 300
50
50
-
-
1.3
0.2
- - -
1.3
0.2
V
200
-
-
1.8
V
V
MHz
pF
lIS'
0,3
0.3
V
-
lIS
lIS
• Pulsed: Pulse width ~ 3OO1iS; Duty Cycle ~ 6%
t For 2SC2522A only
1-21
2SC2522,2SC2522A,2SC2523
COLLECTOR SATURATION VOLTAGE
TRANSFER CHARACTERISTICS
SWITCHING TIME
sc
a
10
20
60
100
IOU 3DCI
VeE. Collector-Emitter Voltage (VOLTS)
0.1
o.s
1.0
1.5
2.0
2.6
VSE, Base Emlttar Voltage (VOLTS)
1-22
3.0
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC2525, 2SC2526
Silicon High Speed Power Transistor
DESCRIPTION
The 2SC 2525/2SC 2526 are silicon NPN general purpose, high power switching
transistors fabricated with Fujitsu's unique Ring Emitter Transistor (RET) tech·
nology. RET devices are constructed with multiple emitters connected through
diffused ballast resistors which provide uniform current density. This structure
permits the design of high power transistors with exceptional switching charac·
teristics and frequency response in high current applications.
The 2SC 2525/2SC 2526 are especially well·suited for High frequency power
amplifiers, Audio power amplifiers, Switching regulators and DC·DC Converters"
PNP complements, 2SA 1075/2SA 1076, are available.
..
OUTLINE DIMENSION
RM-80
• High fT = 80 MHz (typ)
• Ultra fast switching speed
• Excellent Safe Operating Area
• Improved reverse Second·Breakdown Capability
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
Rating
2SC 2525 2SC 2526
Unit
Collector to Base Voltage
VCBO
120
160
V
Emitter to Base Voltage
VEBO
7
7
V
Collector to Emitter Voltage
VCEO
120
160
V
IC
12
12
A
Pc
120
Collector Current
Collector Power Dissipation (TC
= 25°C)
Junction Temperature
Storage Temperature Range
W
120
TJ
+150
Tstg
-65 - +150
°c
°c
ELECTRICAL CHARACTERISTICS (T. = 2S0C)
Limits
Parameter
Symbol
2SC 2525
2SC 2526
Min.
Typ.
Typ.
Max.
-
-
50/-
-
-
-/50
"A
-
50
-
-
50
-
1/-
"A
mA
Test Conditions
Collector Cutoff Current
ICBO
Ves = 120V/160V, IE = 0
Em itter Cutoff Current
lEBO
VEe = 7V,
Collector Cutoff Current
ICEO
VCE = 120V/160V,RBE=OO
Ie =0
Max. Min.
-/1
Collector to Base Breakdown Voltage
V(BRICBO
Ic
=50"A,
IE = 0
120
-
-
160
Emitter to Base Breakdown Voltage
V(BR)EBO
IE
=50"A,
IC = 0
7
-
7
Collector to Emitter Breakdown Voltrage
V(BR)CEO
Ie
= 1mA,
Aae = 00
120
-
-
160
DC Current Gain
hFE1
VCE = 5V,
IC = 1A
DC Current Gain
hFE2
VeE = 5V,
Ic =7A
Collector to Emitter Saturation Voltage
VCE(,atl
IC
=5A,
IB = 0.5A
Base to Emitter Voltage
VBE
Gain-Bandwidth Product
IT
VCE =10V,lc=1A,I=10MHz
Output Capacitance
Cab
VCB = 10V, IE = 0, 1= 1 MHz
Rise Time
Storage Time
Fall Time
VCE = 5V,
Ic = 5A
t,
's,.
t,
IC = 7.5A, RL = 40
IBI = -IB2 = 0.75A
·· ·· -
60
40
50
-
Unit
200
60
-
-
V
V
V
200
-
-
40
0.7
1.8
0.7
1.8
1.25
1.7
-
1.25
1.7
V
80
-
50
80
-
MHz
180
300
-
180
300
pF
-
-
0.3
-
-
-
1.3
-
-
0.2
-
".
".
-
\ 0.3
-
1.3
-
0.2
V
".
"
* Pulsed: Pulse Width .:s:. 300 s
Duty Cycle::;; '6%
1-23
2SC2525,2SK:2526
DC CURRENT GAIN
.
Ie. Collector Current (AMP)
;'"".-
COLLECTOR SATURATION VOLTAGE
u.
~
.to
~
Ii
u ~'~~~-4-4-+~~~~~~-H~
,
~'oo:."
..;
o
~
U
I
2
6
10
20
60
Vea. Collector Base Voltage (VOLTS)
TRANSFER CHARACTERISTICS
SWITCHING TIME
VCC'30V~
II!.! .~ -182 .. Ic;"~!~
~
D.'
1.&
2.0
2.6
veE. Base Emitter Voltage (VOLTS)
1-24
5
10
20
!III
100
zoo
300
VeE, Collector-Emitter Voltage (VOLTS)
OJ
January 1990
Edition 1.1
FUJITSU
PRODUCT PROFILE
2SC2527
Silicon High Speed Power Transistor
DESCRIPTION
The 2SC 2527 is silicon NPN general purpose, high power switching transistors
fabricated with Fujitsu's unique Ring Emitter Transistor (RET) technology. RET
devices are constructed with multiple emitters connected through diffused ballast
resistors which provide uniform current density. This structure permits the design
of high power transistors with exceptional switching characteristics and frequency
response in high current applications.
The 2SC 2527 is especially well-suited for High frequency power amplifiers, Audio
power amplifiers, Switching regulators and DC·DC Converters.
A PNP complement, 2SA 1077 is available.
•
•
•
•
..
OUTLINE DIMENSION
JEDEC TO·22O
0.,413 MAX
(1G.1MAX.1
High fT = 80 MHz (typ)
Ultra fast switching speed
Excellent Safe Operating Area
Improved reverse Second·Breakdown Capability
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Collector to Base Voltage
V CBO
120
V
Emitter to Base Voltage
V EBO
7
V
Collector to Emitter Voltage
VCEO
Unit
120
V
Collector Current
IC
10
A
Collector Power Dissipation (TC = 25° C)
Pc
60
Junction Temperature
Tj
ISO
·c
Tort.
-6S-+ISO
·C
Storage Temperature Range
\~;~,~i';~~
W
I: Base 2: Col!..ter:~:~;~~
Dimension In inchetland (mlII~1' '
ELECTRICAL CHARACTERISTICS (T. = 25°C)
limits
Parameter
Symbol
Unit
Test Conditions
= 120V,
Min.
Typ.
Max.
-
50
Collector Cutoff Current
leBo
VCB
Emitter Cutoff Current
lEBO
VEB = 7V,
IC =0
Collector Cutoff Current
ICEO
VCE = 120V,
IB =0
-
IE = 0
Collector to Base Breakdown Voltage
V(BR)CBO
IC
=
5O~A,
IE = 0
120
Emitter to Base Breakdown Voltage
V(BR)EBO
IE
~SIlI'A,
IC =0
7
Collector to Emitter Breakdown Voltage
V(BR)CEO
Ic
= 1mA,
RBE =
DC Current Gain
DC Current Gain
Collector to Emitter Saturation Voltage
hFE1
hFE2
VCE(sat)
Base to Emitter Voltage
V BE
Gain-Bandwidth Product
IT
Output Capacitance
Rise Time
Storage Time
Fall Time
Cob
VCE = SV,
Ic = IA
VCE = SV,
Ic =SA
IC
=5A,
IB = O.SA
VCE
~
Ic =SA
6V,
VCE ~IOV,lc=1 A,I-IOMHz
V CB = 10V,IE =0, I = IMHz
t,
'st.
t,
Copl'iahl© 1110..,. F\I.IIT8U UlllED ond F...... - - l e o , Inc:.
I c = 7.SA, RL
= 40
IB' = -IB2 = 0.7SA
120
00
I'A
SO
I'A
I
mA
-
V
V
V
·
60
··
-
0.7
1.8
1.2S
1.7
V
40
80
-
MHz
pF
·
40
200
V
-
180
300
-
0.3
-
~.
-
1.3
-
1"
-
0.2
-
1"
• Pulsed: Pulse Width ;:i! 30lll's
Duty Cycle ~ 6%
1-25
2SC2527
GAIN BANDWIDTH PRODUCT
DC CURRENT GAIN
II
,f
.,~ t-
VC~ ;;'SV
--
~-
~:-
'°0.1
I i i
VFE = 10V
->
[--
--- I--
II
i
II
I
H, r
II ,I
.,
I
I
, I,
.., , Current
'"
"' Ie. Collector
(AMP)
..II .,
'"
"'
Ie. Collector Current (AMP)
OUTPUT CAPACITANCE
~Ll
.
IE f = 1MHz
OL
~1000
c
.~~
U
C
"
'.J
ilo
">
Ul_
-;: &
.
"
......
1
o.
;
lOO
1"--- t"'-
e, ,
.!!!::
Wo
0>
>
~
o ""
0.1
1>
o
u
~
,
.
O.S
1
leI Collector CUrrent (AMP)
TRANSFER CHARACTERISTICS
,
,
'"
'"
~
Ves. Collector Base Voltage (VOLTS)
:.
SWITCHING TIME
'""
SAFE OPERATING AREAS
~ll
'"
'"
"-
TC~25"C
Sin*
~
Pulse
,~
"la-"t.~·
O
,
{I U,
,~-== t-
~.
I'-
I'
.,
~~
.,
O.S
1.S
2.0
2.5
VeE, Base Emitter Voltage (VOl.. TS)
1-26
1
2
5
10
Ie, Collector Current (AMP)
1"'_
"veE. Collector-Emitter
'"
'"
'"" (VOLTS)
Voltage
00
~
cP
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC2528
Silicon High Speed Power Transistor
DESCRIPTION
The 2SC2528 is a silicon NPN general purpose, medium power transistor fabricated
with Fujitsu's unique Ring Emitter Transistor (RET) technology. RET devices are
constructed with mUltiple emitters connected through diffused ballast resistors
which provide uniform current density. This structure permits the design of medium
power transistors with exceptional frequency response in high current applications.
The 2SC2528 is especially well·suited for High frequency power amplifiers, Audio
power amplifiers and drivers.
A PNP complement, 2SA1078, is available.
D
OUTLINE DIMENSION
JEDEC TO·220
0.413 MAX
110.5MA)(')
• High fT = 160 MHz (typ)
• Excellent Safe Operating Area
• Improved reverse Second·Breakdown Capability
• Excellent Current Gain Linearity
0/10.148
.,."
l~; ~ti'
.~
Iii :';
ABSOLUTE MAXIMUM RATINGS
Rating
10.81
Symbol
Value
Collector to Base Voltage
V CBO
120
V
Emitter to Base Voltage
VESO
5
V
Collector to Emitter Voltage
VCEO
120
V
2
A
....
lUI
....
,• .51
Collector Current
IC
Collector Power Dissipation (Tc "" 25°Ct
Pc
25
W
Junction Temperature
Tj
150
·C
-65-+150
·c
Storage Temperature Range
!~::Ja
123-~
,
Unit
T
st.
1: Base 2: Cotlector 3: Emitter
Dimension in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (T. = 25°C)
Limits
Parameter
Test Conditions
Svmbol
Unit
Min.
Typ.
-
1
~A
-
100
~A
-
-
V
-
V
Collector Cutoff Current
ICSO
VCS= 120V,
IE =0
-
Emitter Cutoff Current
IESO
V ES = 5V,
IC= 0
Collector Cutoff Current
'CEO
VeE!" 120V,
Is=O
-
Collector to Base Breakdown Voltage
V(SR)eSO
Ie
=
l~A,
IE =0
120
Emitter to Base Breakdown Voltage
V(SR)ESO
IE
=
l~A,
le=O
5
Collector to Emitter Breakdown Voltage
V(SR)eEO
Ie
= lmA,
DC Current Gain
DC Current Gain
Collector to Emitter Saturation Voltage
120
00
1
~A
V
350
hFE1
VeE = 5V,
Ic = 0.3A'
60
hFE2
VeE = 5V,
Ie = 0.7A'
50
Ie "'O.07A*
-
0.15
1.0
Ie'" O.7A*
-
0.8
1.7
V
V CE=l OV ,l e =0.5A,I=1 OMHz
-
160
MHz
V es"20V ,I E='O,I=l MHz
-
60
-
VCE(sat)
Base to Emitter Voltage
VBe
Gain-Bandwidth Product
IT
Output Capacitance
RBe '"
Max.
Cob
CopyrIghl@,I8OIIt'FUJll"8UUI8TEDondFuJtou_I....
Ie
=0.7A,
V cE =5V,
-
• Pulsed: Pulse Width
-
~
V
pF
300.us
Duty Cycle ~ 6%
1-27
2SC2528
OUTPUT CHARACTERISTICS
V
!"'10V
2
II
8"H&+......,
··~
••~~••~~.!-:',~+.u~~.!:.~~,--~~
Ie. Collector Current (AMP)
COLLECTOR SATURATION VOLTAGE
DC CURRENT GAIN
.
..
m~rum~~~~=~~.~m~~.~.~~,~~.~,~~~~~+--'
Ie. Collector Current (AMPS)
TRANSFER CHARACTERISTICS
SAFE OPERATING AREAS
-r';.25'"c
Vel-
Sinala
\II....
~'n.
~M
2
il
=a
u
11.2
H-+ffi~++++++Ia-a~
E~~.~~..~~.~~t~~I,.~~_
.m,!:• ..J..:....L..:.I.o..J....,.!-:'.LL.........!.-.!....,,!:.• -'-...L...l
VBE, Base-Emitter Voltage (VOLTS)
1-28
VeE, Collector-Emitter Voltage
(VOLTS)
OJ
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC2530
Silicon High Speed Power Transistor
DESCRIPTION
The 2SC 2530 is a silicon NPN M.C.-Head amplifier use transistor fabricated with
Fujitus's unique Ring Emitter Transistor (RET) technology. RET devices are
constructed with multiple emitters connected through diffused balast resistors
which provide uniform current density. This structure permits the design of
M.C_-Head amplifier use transistors with exceptional frequency response along with
excellent current gain linearity.
..
OUTLINE DIMENSION
JEDEC TO·220
A PNP complement, 2SA 1080, is available .
• High fT=35MHz (TYP.)
• Excellent Current Gain-Linearity
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector to Base Voltage
Vcso
40
V
Emitter to Base Voltage
VESO
7
V
Collector to Emitter Voltage
VCEO
40
V
Collector Current
Ic
0.5
A
Col/ector Power Dissipation (TC =25° C)
Pc
20
W
Tj
+150
"C
Tstg
-65-+150
"C
Junction Temperature
Storage Temperature Range
e...
1:
2: Collector 3: Emitter;
Dimension In Inches and (mlll1~
ELECTRICAL CHARACTERISTICS (T.
Limits
Parameter
Symbol
Unit
Test Conditions
Min.
Typ.
Max.
-
100
nA
-
100
nA
ICEO
VCE = 4OV,
IS =0
-
-
500
nA
Collector to Base Breakdown Voltage
V(SRICSO
Ic'= 100nA,
IE -0
40
-
V
Emitter to Base Breakdown Voltage
VISRIESO
IE = 100nA,
IC =0
7
-
Collector to Emitter Breakdown Voltage
V(SR)CEO
IC= lmA,
ABE
40
-
-
V
hFE
Collector Cutoff Current
IcSO
VCS = 40V,
IE =0
Emitter Cutoff Current
IESO
VES = 7V,
Ic =0
Collector Cutoff Current
DC Current Gain
=00
100
-
350
-
-
0,065
0.5
V
0,6
1.0
V
VCE=10V,I C=10mA, f=10MHz
-
35
-
MHz
VCs=20V, IE =0,f=1MHz
-
25
-
VCE = 5V,
Ic = 10mA
Collector to Emitter Saturation Voltage
VCE(sat)
IC = 10mA,
Is=1mA
Base to Emitter Saturation Voltage
VSE{sat)
IC = 10mA,
Is=1mA
Gain~Bandwidth
Product
Output Capacitance
IT
Cob
c~ '110 brFWITSU UIm!DondFuJtou _ _ 1nc.
··
V
·
* Pulsed: Pulse Width
Duty Cycle
pF
~
300,",5
f 6%
1-29
2SC2530
GAIN BANOWIDTH PRODUCT
u
o
w'
u.
~
"
"
"
'"
Ie. Collector
Current (mA)
Ie. Collector Current (rnA)
COLLECTOR TO EMITTER SATURATION VOLTAGE
10
zo
60
VeB. Collector Base Voltage (VOLTS)
'c. Collector Current (mA)
BASE TO EMITTER SATURATION VOLTAGE
1-30
cP
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC2920, 2SC2429, 2SC2429A, 2SC2964, 2SC2965
Silicon High Speed Power Transistor
DESCRIPTION
This series are silicon NPN planer general purpose, high power switching
transistors fabricated with Fujitsu's unique Ring Emitter Transistor
(RET) technology. RET devices are constructed with multiple emitters
connected through diffused ballast resistors which provide uniform
current density. This structure permits the design of high power
transistors with superior switching characteristics and frequency
response in high current applications.
OUTLINE DIMENSION
JEDEC TO-3
This series are especially well-suit.. d for high speed/high voltage
switching systems or other applications where large SOA is required.
Applications
Features
*
*
*
* Switching regulators
* Motor controls
* Ultrasonic oscillators
* Class C and D amplifiers
* Deflection circuits
High voltage
Ultra-fast switching
Large safe operating area
1: EmiHllr 2: B... 3: Callector (CI")
Dirnensionin inchasand (mllllmaters)
Outline of the Series (Ta = 25°C)
VCEO (V)
Min.
t.tg (ps)
Typ. at 10 A
tf (PS)
Typ. at lOA
2SC2920
400
1.80 '1
0.18 '1
20-50
kHz
2SC2429
400
2SC2429A
450
1.80 '2
0.11 '2
50-100
kHz
2SC2964
400
2SC2965
450
0.84 '2
0.10 '2
Parts Number
*1: IBI = -IB2
= 1 A,
Operating Frequency Range
of Switching Regulator
100-200
kHz
*2: IBI =-IB2=2A
Maximum Ratings (Ta =25°C)
Item
\SymbOI
Storage Temperature
Tstg
Junction Temperature
Tj
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Test
Ratings
Condition . 2SC2920 12SC2429I 2SC2429A I 2SC2964 I 2SC2965
450
Icp
Base Current-Continuous
IB
Collector Power
Dissipation
Pc
·C
I
600
V
7.0
400
IC
Collector Current-Pulsed
·C
+175
+175
Collector-Emitter Voltage VCEO
Collector CurrentContinuous
-
-65
Pw~'0mS
D.R.S;, %
Tc = 25·C
I
450
Unit
V
I
400
I
450
V
15
A
20
A
5
A
150
W
Copyrlghl@,I1O..,FUJITSU UIllTED .... FuII'"" _ _ 1nc.
MAY 1982
1-31
2SC2920,2SC2429,2SC2429A,2SC2964,2SC2965
• Test Circuit used for Measurement of Switching Time (Resistive)
-Ie
200Sl
90%
Vee = 150V
C2920
C2429, C2429A, C2964, C2965:
IB1 = -IB2 = le/10
IB1 = -182 = le/5
90%
t,
• Test Circuit used for Measurement of
V CEXISUS) and Reverse Bias Safe Operating Area
L= 200j.lH
t Adjusted to Obtain Ie
Leoil (Ie)
200Sl
IB2
RBB
VBE(off)
~5V
®
1
Vclamp
Vee
~20V
'ld-.
VeEX(SUSI
Ie = 8 A, IB1 = 2 A, IB2 = -1 A, RBB = 5Sl, Vcl amp =450V
®
Reverse 8ias Safe Operating Area
IB1~4A,IB2=-1A, RB B =5Sl
1-32
d::J
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC2920
Silicon High Speed Power Transistor
ABSOLUTE MAXIMUM RATINGS ITa = 25 °Cl
Symbol
2SC2920
Unit
Collector to Emitter Voltage
VCEO
400
V
Collector to Base Voltage
VCBO
450
V
VEBO
7
V
Ic
15
A
Icp
20
A
Rating
Emitter to Base Voltage
Collector Current·Continuous
Collector Current·Pulsed ( :;~R~~02
r;,s)
Base Current-Continuous
IB
5
A
Collector Power Dissipation (TC = 25°C)
Pc
150
W
Junction Temperature
Tj
175
°c
T stg
-65-+175
DC
Storage Temperature Range
..
ELECTRICAL CHARACTERISTICS (Ta = 25 °Cl
Parameters
Collector to Base Breakdown Voltage
Symbols
limits
Test Conditions
VIBR)CBO
Ic = 100llA, IE = 0
Emitter to Base Breakdown Voltage
VIBR)EBO
IE = 1 mA, Ic = 0
Collector to Emitter Sustaining Voltage
VCEOISUS)
Typ.
450
-
-
V
7
-
-
V
-
-
V
-
Collector to Emitter Sustaining Voltage
VCE.XISUS)
400
Ic = 1 A, RSE = ~ n
J*1)
Ic=8A,IB2=-lA, L=2001lH 450
Collector Cutoff Current
Max.
Unit
Min.
V
ICBO
VCB=450V,IE=0
-
-
100
IlA
Emitter Cutoff Current
lEBO
VEB=6V,lc=0
-
-
100
IlA
DC Current Gain
hFE
VCE=2V,lc=10A
Collector to Emitter Saturation Voltage
VCElsatl
Ic = 10 A, IB = 1 A
1*2)
10
13
30
-
0.56
1.0
V
1*2)
-
1.2
1.5
V
-
240
-
PF
-
Base to Emitter Saturation Voltage
VBElsatl
Output Capacitance
c.rn
VCB = 10V, IE = 0, f = 1 MHz
Gain Bandwidth Product
fT
VCE = 10V, Ic -2 A
Rise Time
tr
VCC= 150V
Storage Ti me
tstg
Fall Time
tf
*1 Test Circuit
*2 Pulsed Pw ~ 300 Ils, Duty Ratio ~ 6 %
-
MHz
0.20
0.5
Ils
-
1.80
3.0
j.IS
-
0.18
0.3
j.IS
1*1)
Ic = 10 A, IBI = -IB2= 1 A
30
MARCH 1981
Copyrlght© ,HO .., FUJITSU UMTED .... Fufhou _ _ leo, Inc.
1-33
2SC2920
Switching Time
DC Current Gain
~.
~""l.?S
7S·0C
W
Ii.
.J:
.
...
.5
a
VCE - 2 V
50
.......
.......
Tc-150°C
,.·c
t!)
c
I!?
2SoC
5
2D
10
:!S'C
C
k-
Vec -150V
IBl - IB21el10
Pulsed (50,,5)
Duty Cycle = 1 %
ttls
'" ,
2
25. o C
~
-....
II
(.)
I'
1
0
0.06
0.1
0.2
0.5
2
5
010
20
25'C
.;,
JO .5
Collector Current Ic (A)
75'C
125°C
t,
,
'L'
~'
.....
o.2
Gain Bandwidth Product
"
~ ~ <'
t,
o1
fA
.c.
.........
#' '/
1f>,;;r
r-::: ~c
Tc = 25 DC
VCE = 10V
0
v ...
0.1
I--"
-
0.05
r-..
1\
l--""
2
5
10
Collector Current Ic (A)
2
0.2
0.5
Collector Current Ic (A)
5
20
10
Reverse Bias Safe Operating Area
Tc "" 25°C
20
5
Output Capacitance
LL
Tc - 25 DC
f - 1 MHz
~
D
."
500
'u
200
cJ
19
!
~
...
e:>
c5
1-34
\
~
...'"
t.l
.......
c
1\
.!:!
....c:
.......
9
.¥
r-...
8
100
.. -
50
2
5
10
2D
50
Collector· Base Voltage VCB (V)
100
* 1 Test Circuit _
\
\
10
"
200
o
o
-
L=2oo"H
IB2=-lA RBB2=5r1 _
Ie (pulse) max.
100
200
300
400
500
Coliector·Emitter Voltage Velamp (V)
2SC2920
Switching Time
Vee = 150V
le= lOA
Pulsed (50/lS)
Saturation Voltage
Duty Ratio = 1 %
Te=25°C
5
~w
2
~-1
I......
2
.........
I"-
j
1'---
~
o.5
"iC
150"C
=
-ISiIS·'i
"o
.~ o. H~..::,--25lc
Vc;,Elsa,1
~ o.2
0.05
0.1
0.2
0.5
It?"
"
Is = le/ 10 -
2
10
20
Collector Current Ie (A)
IS2 (A)
Tc=25°C
O. 5
~~0.2
~
~~~:g
~
-2
-
2S'C
2S"C
13
'"
-1
TC2
8,
~''1
-0.5
1
w
..
~
co
>
~
11, '" "-
Collector Saturation Region
""'I'
II
~<
"" ~
O. 1
-0.5
,A
Tc = 25°C
3A
5A
7A
,oA
w w
U
»
co
2
-2
-1
IS2 (A)
Vee
,OA
t, - ISl
Te = 25°C
1
5A
'~~
I"\.\:>~.
""'1/
0.1
1\
,
~
11" '"
o
0.05
V
Vee
r\
\
0.1
t:::
I--~
3A
,A
0.2
I--
7A
t::b:
i--
I0.2
0.5
2
5
Base Current IS (A)
2
0.5
ISl (A)
1-35
2SC2920
Forward Bias Safe Operating Area
Tc = 25°C
20
~
0
Thermal Response
~
<:
"'-
.~ ~
"U
"'0_
0.5
f-
0-0.5
f-
+-b.2
.~
'
~
_
io"""
~
~ ~
1
> ~
" >
.~ .;;0.5
-1
-5
-2
182 (A)
V'Eiull
Tc- 2S"C
-
2S"C
75(C
:; 1!
~ ~
> 0.2
150°C
......:::~
I<"'"
Tc-:.~~
Te
= 25 DC
0.1
0.5
~
V~!oot)
F=,"'C
t--1r5Q °C
0.05
0.1
0.2
0.5
2
10
5
20
Collector Current Ie (A)
0.2
~
I~<
0.1
Collector Saturation Region
~~
Ie
~
""
0.05
J, ~
31A
\
7!
I,~
Tc=25 D C
~
~~
2
w w
-1
-2
-5
U
»
ID
IB2 (A)
tr -IB1
Te =25 D C
0.2
lOA
7A
0.1
~<~
7",
-
,.,~
f--
I\"
5
~~
1'a
2
f-:: ~
--: ~ ~ :;...-
\.!CE
\
4)--.:
..........
0.05
5A
3A
Ie -, A
V,"
0.05
A.'
0.2
0.5
1
Base Current I B (AI
2
5
IB1 (A)
1-39
..
2SC2429,2SC2429A
Forward Bias Safe Operating Area
Ie (pulse)mp:.
20
Thermal Response
TC I ~rlC
I-
~
'\
L~J
'~
5
1>
.E
0-·&
~
c:
,
"
Tc=25°C
Single Pulse
~~J
I"
10
I
1
c rnax .
"-
%I
2
D
I::
---!;.;t'l D t,lt,
t,l-
f-::;;
JLJL
o.1"""
~
u
E
<.>
.!1
0.5
"0
U
2
5
10
20
50
100 200
500 1000
Time or Pulse Width t, (mS)
0.2
~
0.1
1"\
0.05
.
•5
I
5
10
20
50
100
~ I'l
500
200
Collector-Emitter Voltage VeE (V)
Forward Bias Safe Operating Area
20
Tc 75°C Single Pulse
Ie (pl,llselmllX.
1>
5
t:
~
1
~
0.5
U
...c:
U 02
.
!<:
~~
20
50
100 200
U
500
Collector-Emitter Voltage VeE (V)
1-40
~~
"0
!i
10
'c
0<>
t ..
.:e'i r-
750C
~
!>. ,';1'
~
~-F f-
-~r1
Cl
'"l!'
0.05
0.1
0.2
0.5
1
2
10
5
Collector Current Ic (A)
I
L~rt>
o
2
en
~
~
>
~"l
I
J
:l
o
>
t- 25°C
Sri I C
o
.~
............
0.2
-5
-2
IB2 (A)
O.1
TJ" ~25lc
IB = le/5
~jII'
I--::: -:;.~
VCEI ... I
25"C,
75°C
'1"y'
~"
0.5
-
'Y
150 C
c:
.........
-1
~Tc"25aC
O.
!j,
'-...
~<'..,
'<"\.~ l - -
O. 1
--
0.05
0.1
"
::;..-
1--
1A
-,
~
\ '0'
5A
,...~:::::
\
\::
Vc ,
'-
0.2
0.5
Base Current IB (A)
2
5
-5
IB1 (A)
1-43
..
2SC2964, 2SC2965
Forward Bias Safe Operating Area
Thermal Response
Tc = 25°C
]
5
10
20
50
100
200
500 1000
;3
0.2
~:Wmt=t:t=~tfmF~· 1\
Time or Pulse Width t, (mS)
'\
1\
0.111_0
0.05
5
10
20
50
100 200
~J
500
Collector-Emitter Voltage VeE (V)
Forward Bias Safe Operating Area
-
JJlIII
20
Ie (pulse) max.
~Y1 r"!.~
~o;.1
10
Forward Bias Safe Operating Area
Tc = 75°C
Single Pulse
.
1
~
5
,,~rv~~
...
~
o~
2
ft
1
a 0.5
8~ o.
~"f\
\
I'\.
2
o.1
1---3i
0.05
~
"
!IJ !IJ
u
5
10
20
50
100 200
u
500
Collector-Emitter Voltage VeE (V)
1-44
5
10
20
50
100
200
500
Collector-Emitter Voltage VeE (V)
cP
January 1990
Edition 1.1
FUJITSU
PRODUCT PROFILE
2SC3044, 2SC3044A
Silicon High Speed Power Transistor
DESCRIPTION
..
The 2SC3044/2SC3044A are silicon NPN planar general purpose, high power
switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor
(RET) technology. RET devices are constructed with multiple emitters connected
through diffused ballast resistors which provide uniform current density. This
structure permits the design of high power transistors with superior switching
characteristics and frequency response in high current applications.
The 2SC3044/2SC3044A are especially well .. uited for high speed/high voltage
switching systems or other applications where large SOA is required.
Features
*
*
*
OUTLINE DIMENSION
JEDEC TO-3
Applications
*
High voltage
Ultra·fast switching
Large safe operating area
*
*
*
*
Switching regulators
Motor controls
Ultrasonic osicillators
Class C and D amplifiers
Deflection circuits
ABSOLUTE MAXIMUM RATINGS
Rating
Value
Symbol
304413044A
Unit
I 450
Collector to Emitter Voltage
V CEO
Collector to Base Voltage
V CBO
450
V
Emitter to Base Voltage
VEBO
7
V
Ic
6
A
Collector Current-Continuous
400
V
Collector Current-Pulsed pw~ 1Oms. D.R .:5:. 2%
Icp
15
A
Base Current-Continuous
la
4
A
Collector Power Dissipation (T c:z::: 25°C)
Pc
100
W
Junction Temperature
T·
+175
°c
T stg
-65 - +175
°c
Storage Temperature Range
1: Base 2: Emitter 3: Collector
i~r'
Dimension in inches and (millim~~>
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Test Conditions
Symbol
Limits
Unit
Min.
Typ.
Max.
-
V
100
I'A
1
mA
100
IlA
ICBO
VCB • 450V.IE =0
-
Collector Cutoff Current
ICBO
Vca' 400V, IE '0, Tc • 100°C
-
Emitter Cutoff Current
lEBO
VEB • 6V.
Ic'O
-
-
DC Current Gain
hFE
VCE' 5V.
I C '3A
10
15
40
-
la ·0.6A (*2)
0.33
1.0
V
Ic=3A,
1.0
1.5
V
100
-
pF
Collector to Base Breakdown Voltage
V(BR)CaO
Ic=1mA.
IE '0
450
Emitter to Base Breakdown Voltage
V(aR)EaO
IE'" 1mA.
IC '0
7
Collector to Emitter Sustaining Voltage
VCEO(sus)
Ic' OBA,
RBe '" 00.0
4001 450
Collector to Emitter Sustaining Voltage
VCEX{sus~
Ic=2A. la2=-IA, L'2QOI'H (*1)
450
Collector Cutoff Current
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Output Capacitance
VCE(sa't)
VBE(sat)
Cob
Gain Bandwidth Product
'T
Rise Time
t,
Storage Ti me
tstg
Fall Time
.Copyrlght@ 1110..,. FVJIT8U UIITED _
t,
F.,... _
(*2)
..... rno.
Vca -10V, IE - 0, I · lMHz
VCE -10V, Ic"' IA
(*1)
Vcc 'l50V
IC = 3A, la1 • -la2 ·0.6A
*1 Test Circuit
-
30
V
V
V
MHz
0.05
0.5
,,{
1.25
1.5
jlS
0.09
0.3
jlS
*2 Pulsed Pw ~ 300 JSS. Duty Ratio ~ 6%
1-45
2SC3044,2SC3044A
SWITCHING TIME
DC CURRENT GAIN
w
u.
~
c:
.iij
Cl
E
a
~
1
o
o
Collector Current Ie (A)
GAIN BANDWIDTH PRODUCT
Collector Current Ie (A)
Collector Current Ie (A)
~
OUTPUT CAPACITANCE
..e,
REVERSE BIAS SAFE OPERATING AREA
~
2
E
~
.c
cJ
"
0
!!
c:
~
..
l!
.!!
c.
8
·u
~
'5
e
"
0
Co.Hector·Base Voltage VeB (V)
1-46
Coliector·Emitter Voltage Vclamp (V)
2SC3044,2SC3044A
SATURATION VOLTAGE
SWITCHING TIME
VCC=lS0V
Ic=3A
IB=IC/S
PW=SOIlS
Duty Ratio = 1%
.,w
>
~C=2S'C
S
_l1li"
t::-
11=
-25 C
2S'C
7S'C
O.S
TC=l50 C
VBE(sa1l
......
.........
w
I
>"
~~IJ
,..~
"0
r--. ~)
1
~
"
o.S
0, 2
2S'C
i5'c
>
"o o. 1
~~C
-1
..
~
f-- r-VCE Isa1l
0.0S
0.02
-{l.S
T =lS0'C_
.~
a"
~
~
r ..
,..
o.OS
0.1
0.2
o.S
I
2
Collector Current IC (AI
IB2IA)
o.S
Tc=2S'C
COLLECTOR SATURATION REGION
~
O.2
o. 1
«H++---+---+-~cW,;lJ
~
=H~~"
-
III
f--
~''''d
.6'"
f-l~
0.0S
II
-{l.S
-1
'B2 (A)
t, -181
TC=2S'C
o. 1
~
.3 0.0S
-~
I-~~
"''"
~
. . II!!
\- -2s'e
w
Te=25'C
5
IB=l e /5
0.5
25'C
7s'e Te-1so'e
>
<- o. 1
"a
V
veE (satl
'0
.~
..
,
w
u
I"-
25'e ,,=::2S'e
75'C
Te -1S0'e
::; 0.0S
~
I
0.02
0.05
1m0.1
0.2
10
0.5
Collector Current Ie (A)
-1).5
-2
Tc=2S
+e~J5JJ
j
«
....
It)
()
2
O. 1
VSE
-1).5
-1
-2
IS2 (A)
-
,
7A~
....
5A
._3A
1
\
-
~
o
0.1
m:J::I+::
\.
0.02
\
0.05
"0.1
:;...:::::: ~
~:;E:
le-0 .5A 1A -
t, - IS1
1.;0'1:::
~ r:::::
~
......
0.2
VeE
1-1-~
0.5
5
Base Current Is (A)
o.05/-H-H+t----+-l
1
IS1 (A)
1-53
2SC3045
FORWARD BIAS SAFE
OPERATING AREA
THERMAL RESPONSE
Time or Pulse Width t, (mS)
10
20
50
100 200
500
Collector-Emitter Voltage VeE (V)
FORWARD BIAS SAFE
OPEARTING AREA
FORWARD BIAS SAFE
OPEARTING AREA
o
I
.'-
10
~~U"
~
1
0,5
~
o
0.0 5
5
10
\
I
11111
20
50
100
200
500
Collector-Emitter Voltage VeE (V)
1-54
'\
0,2
0, 1
ITllr-t
Pulse
~X '<;l1
2
u
Single
'"
5
~
Tc~112 5°~'
~ Ip~I~1 max_ I I
10
20
50
100 200
500
Collector-Emitter Voltage VeE (V)
2SC3045
TEST CIRCUIT USED FOR MEASUREMENT OF SWITCHING TIME (RESISTIVE)
~
---Ie
[(32.
..
'B2
~
2ClOn
~
ABB
90%
vee ";1S0V
90%
VBB";SV
I B, = -IB2 = le/5
'e
'l
t,
0
tstg tf
TEST CIRCUIT USED FOR MEASUREMENT OF
VCEXISUSI AND REVERSE BIAS SAFE OPERATING AREA
t, Adjusted to Obtain Ie
2000
15463 x 6
VBE(aff)
1
Vee
"i 30V
Vcl amp
"iSV
®
VCEX(SUS)
Ie
= 2A,
IB,
= 1A, IB2 = -1A,
RBB
= 5Q, V clamp = 450V
® Reverse Bias Safe Operating Area
I B, :<:;4A, IB2 = -1A, RBB = 5Q
1-55
1-56
cP
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC3046
Silicon High Speed Power Transistor
DESCRIPTION
The 2SC3046 is a silicon NPN planar general purpose, high power switching tran·
sistor fabricated with Fujitsu's unique Ring Emitter Transistor (RET) technology.
RET devices are constructed with multiple emitters connected through diffused
ballast resistors whiCh provide uniform current density. This structure permits the
design of high power transistors with superior switching characteristics and fre·
quency response in high current applications.
D
The 2SC3046 is especially well-suited for high speed/high voltage switching systems
or other applications where large SOA is required.
Features
*
*
*
OUTLINE DIMENSION
JEDEC TO-3
Applications
High voltage
Ultra·fast switching
Large safe operating area
*
Switching regulators
*
Deflection circuits
* Motor controls
* Ultrasonic osicillators
* Class C and 0 amplifiers
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Collector to Emitter Voltage
V CEO
450
Collector to Base Voltage
VCBO
600
V
Emitter to Base Voltage
VEBO
7
V
IC
10
A
Icp
20
A
Base Current-Continuous
IB
5
A
Collector Power Dissipation (T c;;; 25°C)
Pc
100
W
+175
°c
Collector Current-Continuous
Collector Current-Pulsed PW~ 10ms, D.R.~2%
T
Junction Temperature
Storage Temperature Range
T stg
-65 - +175
°c
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
ParameteF
Limits
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
V(BRlCBO
IC-lmA,
IE -0
600
-
-
V
V(BRlEBO
IE =lmA,
Ic =0
7
-
V
Ic -0.8A,
RBE =ooSl'
450
-
-
V
Collector to Base Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector to Emitter Sustaining Voltage
VCEO(sus)
Collector to Emitter Sustaining Voltage
VCEX(sus)
Collector Cutoff Current
lCBO
)c = SA, IB2 = -lA, L = 200 I'H (*1)
V CB =500V,IE =0
450
-
-
V
100
lOA
-
-
1
mA)
100
I'A
14
30
V
Collector Cutoff Current
ICBO
VCB = 500V, IE = 0, Tc = 100°C
Emitter Cutoff Current
lEBO
VEB = 6V,
IC =0
DC Current Gain
hFE
VCE = 5V,
Ic =6A
(*2)
10
Ic -SA,
lB = 1.2A (*2)
-
0.43
1.0
1.05
1.5
V
-
230
-
pF
MHz
-
O.os
0.3
lOS
-
1.25
1.5
-
0.07
0.2
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Output Capacitance
VBE(sat)
Cob
Gain Bandwidth Product
IT
Rise Time
"
Storage Time
',;g
Fall Time
Copyriaht© .... .., FUJITSU U"lED _
VCE(sat)
"
""'.... _
..... Inc.
VCB"·10V, IE = 0, 1= lMHz
VCE = 10V, Ic=2A
(*1 )
VCC -150V
IC - 6A, IBI
a
-IB2 -1.2A
·1 Test Circuit
28
'"
1"
"2 Pulsed Pw ;a; 300 lAS. Duty Ratio
;a; 6%
1-57
2SC3046
DC CURRENT GAIN
w
u.
.c
"
~
50
20
C
10
Er:fiw:
~~150·C
t-
5
-76"
2
-
5
0.05
0.1
0.2
0.5
2
Collector Current Ic (A)
10
.-
-....: .......
,
-2!fc
1
20
.t:i
VCC' l50V
IB1=-ls2=lcl5
Pulsed (Sal'll)
Outv Cvcle = 1%i
1'C"'1:o>S"C
-~
~5·
~
""t::
U"
U
SWITCHING TIME
v
- :?S·c
tat.
i'
;
....... -!'--
·f
I~
-
'\
.0
:~o
O. 5
~
1J'125·C
O. 2
o. 1
GAIN BANDWIDTH PRODUCT
t;~,
t~
"
~~
~ 7S·C
S'C
TC=25·C
0.05
Vce-1OV
~
I'
V
0.1
f'
",. 1--''''''
t~'
0.2
5
10
20
Collector Current Ic (A)
.......
"
1
2
0.5
Collector Current Ie (A)
~
10
REVERSE BIAS SAFE OPERATING AREA
OUTPUT CAPACITANCE
u:..9:
J
~
l!
'g
500
200
c. 100
a
~
50
o
10
Collector-Base Voltage VCB (V)
1-58
Collector-Emitter Voltage Vclamp (V)
2SC3046
SWITCHING TIME
SATURATION VOLTAGE
VCC=150V
Ic =6A
Pulsed (50"S)
IB=IC/5
Duty Ratio == 1%
2
w
>'"
t--VBE{satl
'I==Tc=-25"e
TC=j5"e
w
u
i'~~-iL
~' ?-i ~
/.
1
>
"'"
2!
g
~=]25.JC
t--75"e
0.5 f---I' I
0.2 f----
t:
a
.~
::I
I--
1-1150~e
~c~-25
~~
VCE{S.')
e
i--::~
25"e
75°C
150"e
O. 1
~
0.05
0.5
0.1
0.2
0.5
2
10
5
20
Coliector Current fe (AI
-1
-2
IB2 (A)
0.5r-r-,-rr-r----,-...,
HH-+++--Tc=2S"e
COLLECTOR SATURATION REGION
0.2H+++f---j---I
f---- j -
~,
f---- j-
.9
11~ j - J ~.
i~
"---1
S! r-- j-+c~2~jJ
..:
2
VaE
0.05HH-+++--I
10
-2
1
1--- Ic=IA
IB2 (A)
3A
5
7
I'
~ VCE
J
"-
~
tr -fBI
0
0.05
0.1
-
~~
F'"
0.2
0.5
5
Base Current 18 (AI
~
.: 0.05H-I-+++--fBI (AI
1-59
2SC3046
FORWARD BIAS SAFE
OPEARTING AREA
Te=25'
20
THERMAL RESPONSE
10
II~a~.
f'.
i,
'\
~O;,.
5
'" ~~
~~"
~:'is>
~
.<
2
l~
1
~
~I~
Single P
.Ie (pulse) max;
.~
. l\
o.5
.!!
;3
Time or Pulse Width t, (mS)
1,\
" 1\.'
O.2
o.1
0.0 5
5
10
20
50
100
200
500
Collector-Emitter Voltage VCE (V)
FORWARD BIAS SAFE
OPEARTING AREA~
FORWARD BIAS SAFE
OPERATING AREA
T e =125'C
--::'-:±-I--H-t+H+--t-Single Pulse
500
Collector-Emitter Voltage VCE (V)
1-60
Collector-Emitter Voltage VCE (V)
2SC3046
TEST CIRCUIT USED FOR MEASUREMENT OF SWITCHING TIME (RESISTIVE)
~
----Ie
[d"
..
IS2
~
2000
I;;RSB
90%
Vee "o'50V
90%
V BB ::;5V
IB' = -IB2 = le/5
Ie
0
t,
t stg tf
TEST CIRCUIT USED FOR MEASUREMENT OF
VCEXlSUSI AND REVERSE BIAS SAFE OPERATING AREA
t, Adjusted to Obtain Ie
2000
,S463 x 6
VSE{off)
1
Vee
=, 20V
V clamp
=,5V
®
VCEX(SUSl
Ie
= 8A,
IBl
= 2A, IB2 = -1A,
RBB
= 5!"!, Vclamp = 450V
® Reverse Bias Safe Operating Area
I B,
:S; 4A, IB2 = -1A, RBB = 5!"!
1-61
1-62
cP
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC3055
Silicon High Speed Power Transistor
DESCRIPTION
..
The 2SC3055 is a silicon NPN planar general purpose. high power switching tran·
sistor fabricated with Fuiitsu's unique Ring Emitter Transistor (RET) technology.
RET devices are constructed with multiple emitters connected through diffused
ballast resistors which provide uniform current density. This structure permits the
design of high power transistors with superior switching characteristics and frequency response in high current applications.
The 2SC3055 is especially well·suited for high speed/high voltage switching systems
or other applications where large SOA is required.
Features
*
*
*
OUTLINE DIMENSION
JEDEC TO-220
Applications
*
*
*
*
*
High voltage
Ultra·fast switching
Large safe operating area
Switching regulators
Motor controls
Ultrasonic oscillators
Class C and 0 amplifiers
Deflection circuits
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector to Emitter Voltage
VCEO
400
V
Collector to Base, \l?ltage
VCBO
450
V
Emitter to Base Voltage
VEBO
7
V
Rating
Collector Current-Continuous
Ic
2
A
Collector Current-Pulsed Pw:S 10ms, D.R.:S2%
Icp
4
A
Base Current-Continuous
Collector Power Dissipation (T c
= 25°C)
IB
1
A
Pc
15
W
Junction Temperature
Ti
Storage Temperature Range
Tstg
+150
·C
-55 - +150
"C
1: Base 2: Collector
3: Emitter 4: Fin (Collector)
Dimension in inches and (millimeters)
ELECTRICAL CHARACTERISTICS IT. = 25°C)
limits
Parameter
Symbol
Test Conditions
Unit
Min
Collector to Base Breakdown Voltage
VIBRlCBO
IC= lmA,
Emitter to Base Breakdown Voltage
VIBRlEBO
IE =
Collector to Emitter Sustaining Voltage
VCEO(sus)
Ic = 0.5A,
RBe = oon
400
Collecto~
VCEX(sus)
IC = lA, IB2 = -0.2A, L = 200 IiH (*11
450
to Emitter Sustaining Voltage
50~A,
Typ.
Max.
450
IE = 0
V
V
I.c = 0
V
V
Collector Cutoff Current
ICBO
V CB = 400V,IE = 0
10
~A
Collector Cutoff Current
ICBO
VCB = 400V,IE = 0, Tc = 100"C
500
~A
Emitter Cutoff Current
lEBO
V EB = 6V.
Ic = 0
10
~A
VCE = 5V,
Ic = 0.lA/0.5A (*2)
IC =0.5A,
IB =O.lA
DC Current Gain
hFE1/hFE2
Collector to Emitter Saturation Voltage
VCE(sat)
Base to Emitter SaturatiDn Voltage
VBE(sat)
(*21
20/10
35/-
80/-
0.45
1.0
V
1.1
1.2
V
Output Capacitance
Cob
VCB= 10V,IE=O,f=1 MHz
25
pF
Gain Bandwidth Product
fT
VCE = 10V,I c = 0.2A
28
MHz
Rise Time
f,
Storage Time
t stg
Fall Time
If
Copyrlghl@ '110 by FUJITSU U ..1ED -FUJIOU
_ _ lco,lnc.
(*1)
VCC = 150V
IC = 0.5A,IBI = -I B2 = O.lA
*1 Test Circuit
0.06
0.5
2.00
3.0
/.IS
0.09
0.3
/.IS
!'.
*2 Pulsed Pw ~ 300 JJS, Duty Ratio ~ 6%
1-63
2SC3055
DC CURRENT GAIN
SWITCHING TIME
w 1
u.
..c:
t:
'iii
(!l
Collector Current Ie (A)
GAIN BANDWIDTH PRODUCT
~
U
:::J
¥
Collector Current Ie (At
Q.
£~
~~2
~.t"
'"
t:
~
Collector Current Ie (A)
OUTPUT CAPACITANCE
.c 100
0
50
19
3
tJ
.!!!
"0
u
'u
~
~
:::J
t,)
2;
U
..
4
<::
.s
'"c:
~
.9
~
~
u
REVERSE BIAS SAFE OPERATING AREA
20
U
~
:::J
e
10
:::J
0
Collector-Emitter Voltage Vclamp (V)
1-64
2SC3055
SWITCHING TIME
SATURATION VOLTAGE
Vee = 150V
Ie
= 0.5A
~
Pw = 50"S
Tc=26"C
f'.r-.
1
O.
5
]
~!iC-25 C
~
76"C
0.5
>
""
2
VeElsatl
>
t stg -I B 2
5
r-.
~ le=le/5
W
m
Duty Ratio = 1%
~
'r-
~~o"..,
kl~~
-0.5
E
I--Te=1&fC't+H+---+~-+~~~--~~~~++tH~--+--r~
->0
·r
0.2' --t---t-'H-ttttt---+-t--;!;:i-25'
25'cTiLC "'"~~
76"C~iI!!I!
....
VCElsatl
.~ 0'1~fill.~~T~C~=1~5~"~icl~~J~I~til~~~j
~
~
0.002
0.005 0.01
0.02
0.05
0.1
0.2
Collector Current Ic (A)
0.5
2
-2
-1
IB.IA)
O. 2
~
~~
O. 1
I-
~ U"'"0.'''''
0.
f'/
COLLECTOR SATURATION REGION
.......,
0.05
-0.05
Tc=26"C
-0.1
.... CI,..,
-0.2
IB2 IA)
t
0;:
>g'
~.t::
~ a
.~>
E
~
w~
1
~.~
...
tJw
TC = 26"C
~~ 0.05I-H++++"~
=~
0",
um
Base Current I B (A)
0.02'0.05
1-65
..
2SC3055
THERMAL RESPONSE
Time or Pulse Width t, (mS)
FORWARD BIAS SAFE
OPERATING AREA
~
~
E
E
8(;
u
~
§
~
t)
.~
8
.!!!
0
u
Collector-Emitter Voltage VeE (V)
1-66
FORWARD BIAS SAFE
OPERATING AREA
Collector-Emitter Voltage V CE tV)
2SC3055
TEST CIRCUIT USED FOR MEASUREMENT OF SWITCHING TIME (RESISTIVE)
~
--Ie
lft'
..
IB2
~
200n
~
Vas =:= 5V
IB1
= -IB2 = lel5
,i
90%
vee =,150V
Ie
t,
90%
0
t stg tf
TEST CIRCUIT USED FOR MEASUREMENT OF
VCEX(SUS) AND REVERSE BIAS SAFE OPERATING AREA
t, Adjusted to Obtain Ie
200n
Vee
=,20V
VSE(off)
,,5V
®
VCEX(SUS)
Ie
= lA,
IB1 = O.5A, IB2 = -O.2A, RBB = 21m, Vclamp = 450V
® Reverse Bias Safe Operating Area
IB1 S,2A,I B2 =-O.2A, R BS =25Q
1-67
1-68
cP
January 1990
Edition 1.1
FUJITSU
PRODUCT PROFILE
2SC3056, 2SC3056A
Silicon High Speed Power Transistor
DESCRIPTION
..
The 2SC3056/2SC3056A are silicon NPN planar general purpose, high power
switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor
(RET) technology. RET devices are constructed with multiple emitters connected
through diffused ballast resistors which provide uniform current density. This
structure permits the design of high power transistors with superior switching
characteristics and frequency response in high current applications.
The 2SC3056/2SC3056A are especially well-suited for high speed/high voltage
switching systems or other application where large SOA is required.
Features
*
*
*
OUTLINE DIMENSION
JEDEC TO·220
Applications
*
High voltage
Ultra·fast switching
Large safe operating area
*
*
*
*
Switching regulators
Motor controls
Ultrasonic osicillators
Class C and D amplifiers
Deflection circuits
D.413 MAX
J I10.5MA )(.)1
I
10;\0.148
'103.7)
I
ABSOLUTE MAXIMUM RATINGS
Rating
Value
Symbol
Unit
305s1305sA
Collector to Emitter Voltage
V
Collector to Base Voltage
VCOO
450
V
Emitter to Base Voltage
V EBO
7
V
Ic
S
A
Collector Current.continuous
PW~10ms,
Icp
15
A
Base Current-Continuous
10
4
A
Collector Power Dissipation (T C =25° C)
Pc
50
W
Junction Temperature
TJ
+150
"C
T stg
-55 - +150
"C
Collector Current.pulsed
O.R.::::;;:2%
Storage Temperature Range
0....
11.5)
I 450
400
VCEO
0.020
10.5)
1; Base ·2; Collector
3; Emitter 4; Fin (Collector)
Dimension in inches and (milllimeters)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Paramet~r
Limits
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
V(BR)CBO
Ic=lmA,
IE =0
450
-
-
Emitter to Base Breakdown Voltage
V(BRJEBO
'IE =lmA,
Ic=O
7
V
Collector to Emitter Sustaining Voltage
VCEO(sus)
Ic =O.8A,
ROE =
Collector to Emitter Sustaining Voltage
VCEX(sus)
IC = 2A, 102 = -lA, L = 200l'H (*2)
100
I'A
1
mA
100
"A
V
Collector Cutoff Current
leBO
VCO
Collector Cutoff Current
leBO
VCO =400V, IE =0, Tc = l00"C
-
Emitter Cutoff Current
IESO
VEO
-
-
DC Current Gain
hFE
VCE =5V,
10
15
40
0.42
1.0
V
1.0
1.5
V
V co =10V, IE=O, 1=IMHz
-
100
-
pF
VCE = 10V,
-
30
-
MHz
-
0.05
0.5
1"
1.25
1.5
1"
0.09
0.3
1"
Collector to Emitter Saturation Voltage
Base to
Em~tter
Saturation Voltage
Output Capacitance
Gain Bandwidth Product
Rise Time
Storage Time
Fall Time
VCE(sat)
= 450V,
=
SV,
Ic=3A,
IE =
~n
a
Ic=O
I c =3A (*2)
10 = O.SA (*2)
VBE(sat)
Cob
IT
"
t,tg
Ic=IA
(*1)
VCC = 150V
IC =3A, JB1 - -1 02 = O.SA
tf
*1 Test Circuit
4001450
450
*2 Pulsed Pw ~
3OO~s,
V
V
-
Duty Ratio
~
6%
1-69
2SC3056,2SC3056A
DC CURRENT GAIN
SWITCHING TIME
VCC· ,50V
IB1=ls2-I C15
Pw=5011S
DutY Ratio = 1% .
w
u.
5
.s:
c:
.;
7:
I-
r-
Cl
~
c:
~
o
0.05
0.1
0.2
0.5
1
2
5
Collector Current Ie (A)
totg
'"
r-- t::::'"r--- ....
1
en
0.02
~
7~-'"
:2 'c
21-
8u
-iJs. It';:-.
.CJ CJ
/lJl'
.3
.
;:-
i" .,..."
o.5
,."CJ
l
~
.;
\
0.2
o.
GAIN BANDWIDTH PRODUCT
71"0-1. II
1~.
1=
~
0.05
c~26"e
Vc .-10V
I
CJ
V, Ii
,,~'t I
'v
0
0
~
......
10-'10~
,
0.5
10
2
20
Collector Current Ie (A)
~
I'
0
0.1
0.2
0.5
1
2
5
Collector Current Ie (A)
REVERSE BIAS SAFE OPERATING AREA
20
ii:'
OUTPUT CAPACITANCE
I-Ic (PuL) max.
~
~ 10
u"
cJ
11c:
1 .' . s,;.
i--
~
0
li}~~.~
1)
..
j!!
~
'u
tt-:
;3
Co
u
e"
"
0
o
Coliector·Base Voltage VeB (V)
,,";'\i''''
100
" ..
'~~,:
'
~." ~~.
"'2
~
rt&:±, ~'.,
~
1-70
.,
c:
<>
R&B=W-
I
.2
~
..90
T c=2S-126'C
L=200uHIB2--1A
;::'" ~
.
hi··
.,
200
300
'.~ [,;"1.".;,
400
500
Collector-Emitter Voltage Vdamp (V)
,,,,,?,:,
2SC3056,2SC3056A
SATURATION VOLTAGE
SWITCHING TIME
VCC=150V
le=lc/S
IC=5A
2
Pw=50~S
= 1%
Duty Ratio
w
tstg-IB2
T -25'C
5
~
...........
I""'-
:;.'"
>'"
T
~
>
~
~~~~ r---
......
1
t
(5
>
"o
"""III
' _ _25' C
25'C
"S'
0.5
I-- C· ,25'C
2
O.
I
V
...
~
~
25'C
75°C
0 .1t=:
!=="c·,25'C
..
,•
VeE Isat
/
VCE satl
.~
~
c?l
0.05
0.5
0.05
0.02
-0.5
0.1
5
2
0.5
0.2
Collector Current Ic (A)
-1
le2 (I',I
Tc =2S·C
O.5
COLLECTOR SATURATION REGION
~
0.2
O. 1
,~ n;r -,j-
1
«
It!
~
~ ''f.~ f= --;~1~'6'~ ,---
'i'
'"
u
~
0.05
I
-0.5
Vee
-1
le2 (AI
A·
1
2A-
t, - 181
~. =a.5A
=25'C
:-/~
.3
..: 0.05
I~'«
0.02
II
0.5
IBI (A)
\.
o
I----
0.02
i~
\~
0.05
0.1
0.2
-
-'"
~
~
"
~
VCE
....
....
i'
I'
:.
'--'r.-~
~f-'C1~
~
lA
~
L' .
O. 1
(i)
~}J5!J
«
M
~
0.5
2
5
Base Current 18 (A)
"
1-71
2SC3056,2SC3056A
THERMAL RESPONSE
0.1 _ _
0.5
~~
5
10 20
50 100 200
Time or Pulse Width t1 (mS)
500
FORWARD BIAS SAFE
OPERATING AREA
FORWARD BIAS SAFE
OPERATING AREA
0.02!H-H-+t+if----+--++++++-I+--I-HlH+lH+
5
Collector-Emitter Voltage VCE (V)
1-72
10 20
50 100 200
500
Collector-Emitter Voltage VCE (V)
2SC3056,2SC3056A
TEST CIRCUIT USED FOR MEASUREMENT OF SWITCHING TIME (RESISTIVE)
~
--Ie
If±"
IB2
~
200n
-r;;-
T.U.T.
RBB
90%
Ve e,,'50V
90%
VBS=::5V
IB1 = -IB2 = le/5
Ie
'l
t,
0
t stg tf
TEST CIRCUIT USED FOR MEASUREMENT OF
VCEXlSUS) AND REVERSE BIAS SAFE OPERATING AREA
t, Adjusted to Obtain Ie
200n
I
VBE(off)
Vee
,,30V
Vcl amp
";5V
o
VCEX(SUS)
Ic
= 2A,
IB1
= lA,
IB2
= -lA,
RBB
= 5Q, VcI,mp = 450V
® Reverse Bias Safe Operating Area
IB1 :": 4A, IB2 = -lA, RBB = 5Q
1-73
1-74
cO
Janual)' 1990
Edition 1.1
FUJITSU
PRODUCT PROFILE
2SC3057
Silicon High Speed Power Transistor
DESCRIPTION
..
The 2SC3057 is a silicon NPN planar general purpose, high power switching tran·
sistor fabricated with Fujitsu's unique Ring Emitter Transistor (RET) technology.
RET devices are constructed with multiple emitters connected through diffused
ballast resistors which provide uniform current density. This structure permits the
design of high power transistors with superior switching characteristics and fre·
quency response in high current applications.
The 2SC3057 is especially well .. uited for high speed/high voltage switching systems
or other appl ications where large SOA is required.
*
*
*
OUTLINE DIMENSION
,
JEDEC TO·220
Applications
Features
* Switching regulators
* Motor controls
* Ultrasonic osicillators
* Class C and D amplifiers
* Deflection circuits
High voltage
Ultra-fast switching
Large safe operating area
0.413 MAX
1",.5 MAX'>
(10.148
t~.71
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector to Emitter Voltage
V CEO
400
V
Collector to Base Voltage
VCSO
450
V
Emitter to Base Voltage
VESO
7
V
10
A
Collector Current-Continuous
Collector Current-Pulsed
PW~10ms,
IC
D.R.$2%
ICp
IS
A
5
A
Base Current-Continuous
Is
Collector Power Dissipation (T C "" 25° C)
Pc
50
W
Junction Temperature
TJ
+150
°c
Storage Tempetature Range
T stg
ELECTRICAL CHARACTERISTICS
-65 - +150
0.020
".,
1: Base 2: Collector
3: Emitter 4: Fin (Collector)
°c
'Dimension in
i~hes
and (millimeters)
IT. = 25°C}
Limits
Parameter
Symbol
Test Conditions
Unit
Typ.
Max.
Collector to Base Breakdown Voltage
V(SR)CSO
Ic""lmA,
IE = 0
450
-
-
V
Emitter to Base Breakdown Voltage
V(SR)ESO
'E =lmA.
Ic -0
7
-
-
V
RSE = ~a
400
-
-
V
450
-
-
V
-
-
100
/LA
I
mA
-
100
"A
16
40
V
Collector to Emitter Sustaining Voltage
VCEO(sus)
Ic -O.SA.
,Collector to Emitter Sustaining Voltage
VCEX(sus)
IC
Collector Cutoff Current
ICBO
z
2A, IS2 = -lA, L = 200 /LH (*1)
VCS = 450V, IE =0
Min.
Collector Cutoff Current
ICBO
VCS=4ooV. IE =0, TC= 100°C
Emitter Cutoff Current
lEBO
VES =6V,
Ic =0
DC Current Gain
hFE
VCE=5V.
IC =5A
(*21
10
-
1.0
Is =IA
(*2)
0.46
Ic=5A.
-
1.2
1.5
V
100
-
pF
0.09
0.5
-
1.90
2.5
0.14
0.3
Collector to
Emitte~
Saturation Voltage
Base to Emitter Saturation Voltage
Output Capacitance
VCE(sat)
VBE(sat)
Cob
Gain Bandwidth Product
IT
Rise Time
I,
Storage Time
Fall Time
t stg
VCS = 10V, Ie = 0, I -IMHz
VeE = 10V.lc = fA
(*1)
Vcc -150V
IC = SA, lSI - -IB2= IA
If
copyrlghl© 'lID.., FWITIIU UIiTEDMd FuJtou _ _ ..... !no.
'1-1 Test Circuit
-
32
MHz
...
...
...
'1-2 Pulsed Pw ~ 300 #,5, Dutv Ratio ~ 6%
1-75
2SC3057
w 100
u.
.I:
c:
~
DC CURRENT GAIN
ru:
SWITCHING TIME
{,~~~6V
10
t---T C':t
25
1::
0
E
8u
~
lUl,50V
I-"::~
Pw=50jlS
Duty Ratio
= 1%
'stg
~ ~ 1'0..:
~
0
c
5
r" f:::1'
,
2
Vi
0.02
0.05
0.1
0.2
0.5
2
Collector Current Ie (A)
5
5
10
1
~
o"i"
!! 'l<>Jz,,"
ry
~'"
II
/o.,CJ
.; o.5
;(;V I~
0.2
0
~,'I)
.~~
.!
o.1
TC*25°e
Vce=10V
-
~;
.;yrPJv
-
11'"
",
I
~-
0.05
1,,\
~~
!'\.
,
,
GAIN BANDWIDTH PRODUCT
0
I
lSI =I S2 =l c /5
1= ~ {,~5
7,~
5
.......
50
e
..a e
I II
7"6 ...
0.5
~
10
2
5
Collector Current I c (A)
20
.>,<
0.1
02
O.
2
Collector Current Ie (A)
5
REVERSE BIAS SAFE OPERATING AREA
20
OUTPUT CAPACITANCE
ii:
S
~
c:
~::>
cJ
..
'u
c.
10
U
(;
100
1:)
fl
.!!!
8
50
l'l
::>
..........
"\-,,
20
10
20
50
100
Collector-Base Voltage VCB (V)
1-76
200
\
'\
\
"
~
e
0"
IPL..) max.
\
2
.c 200
8c:
-Ie
~
TC-25-125°C'
L=2QO"HIS2=-IA ----,RSB=50
o
T
300,
500
100
200
400
Collector-Emitter Voltage V clamp (V)
2SC3057
SWITCHING TIME
SATURATION VOLTAGE
la=lc/S
W
III
>
TC=2Sb C
S
"
w
VaElsatl
>
<':!- -
~1~
1
..
~
0.2
13
o
:;; o. 1
o
'fii
~
~
..
l.4!
u
~
2
!
1=1-
\--2S'C
2S'C'
7S'C
0.5
t---fT c-1SO'C
l.L
V
JC2)C
2S'C
_~TC-1S0C
VCElsati
0,0 S
I
~
0.02
1
O.OS
0.1
L U
o.S
0.2
10
Collector Current Ic (A)
-O.S
-1
-2
la21AI
tf -
IS2
TC=2S'C
COLLECTOR SATURATION REGION
o. S
r---l'"
~~
t-rt
2
II
J.
I~
I
..,l ~~
~d!
1\
" O. 5
"
U
U
Su
Su
.l!!
"0
u
.l!!
"0
u
O.2
O. 1
\
0.05
0.02
10
Collector-Emitter Voltage VCE (V)
1-78
20
50
100 200
500
Collector-Emitter Voltage VCE (V)
2SC3057
TEST CIRCUIT USED FOR MEASUREMENT OF SWITCHING TIME (RESISTIVE)
~
--'e
lit"
..
'e2
~
200n
-----,;;Ree
,i
90%
Vee ';1S0V
VBB~5V
Ie, = -le2 = le/5
'e
t,
90%
0
tstg tf
TEST CIRCUIT USED FOR MEASUREMENT OF
VCEX(SUS) AND REVERSE BIAS SAFE OPERATING AREA
t, Adjusted to Obtain Ie
200n
15463 x 6
VSE{Off)
1
Vee
';30V
Vclamp
=,SV
o
VCEX(SUSI
Ie = 2A,IB' = IA,I e2 =-IA, Ree =5n, Vclamp = 450V
® Reverse Bias Safe Operating Area
le1 :::; 4A, le2 = -lA, Ree =
sn
1-79
1-80
cP
January 1990
Edition 1.1
FUJITSU
PRODUCT PROFILE
2SC3058
Silicon High Speed Power Transistor
DESCRIPTION
The 2SC3058 is a silicon NPN planar general purpose, high power switching tran·
sistor fabricated with Fujitsu's unique Ring Emitter Transistor (RET) technology.
RET devices are constructed with multiple emitters connected through diffused
ballast resistors which provide uniform current density. This structure permits the
design of high power transistors with superior switching characteristics and fre·
quency response in high current applications.
The 2SC3058 is especially well-suited for high speed/high voltage switching systems
or other applications where large SOA is required.
Features
*
*
*
OUTLINE DIMENSION
JEDEC TO-3
Applications
* Switching regulators
* Motor controls
Ultrasonic osicillators
* Class C and D amplifiers
High voltage
Ultra·fast switching
Large safe operating area
*
*
Deflection circuits
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector to Emitter Voltage
V CEO
400
V
Collector to Base Voltage
V CBO
600
V
Emitter to Base Voltage
VEBO
7
V
Collector Current-Continuous
Ie
30
A
Collector Current-Pulsed PwS,1Oms. O.R.~2%
lep
50
A
Base Current-Continuous
IB
10
A
Collector Power Dissipation (T c
=2SoC)
Pe
Junction Temperature
T·
T stg
Storage Temperature Range
200
W
+175
"C
-65 - +175
"C
a...
I:
2: Emitter 3: Collector (<::ase)
Dimension iil inch~ and tmHlllmett;rs)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Limits
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
-
-
V
-
-~
Collector to Base Breakdown Voltage
V(BR)eBO
tc=lmA.
Ie =0
600
Emitter to Base Breakdown Voltage
VIBR)eBO
IE =lmA,
le=O
7
Collector to Emitter Sustaining Voltage
VCEO(sus)
Ie =O.BA,
RBe = 000
400
-
Collector to Emitter Sustaining Voltage
VeEX(sus)
Ie = lOA, IB2 = -2A, L = 200 pH (*11
450
-
-
100
pA
-
-
2
mA
100
"A
10
14
40
-
0.55
1.0
V
1.25
1.5
V
420
-
pF
-
MHz
Collector Cutoff Currerit
leBO
VeB = 5OOV, Ie = 0
Collector Cutoff Current
leBO
VeB~5OOV, le=O, Te=loo'C
Emitter Cutoff Current
lEBO
VEB =6A,
le=O
DC Current Gain
hFE
Vee m5V,
Ic = 20A
Collector to Emitter Saturation Voltage
VCE(S8t)
Base to Emitter Saturation Voltage
VBE(sai)
Output Capacitance
Gain Bandwidth Product
AiseTime
Storage Time
Fall Time
Cob
IT
"
t stg
"
Ie = 2OA,
IB=4A
(*21
(*21
VCB = 10V, IE=O,I=IMHz
Vee = 10V,
Vee = 150V
Ie
=2OA,
le=4A
!*II
IBI = -IB2 = 4A
·1 Test Circuit
-
30
V
Ii
0.17
0.5
p.
2.10
3.0
ps
0.10
0.3
p.
*2 Pulsed Pw ~ 300 ps, Duty Ratio ~ 6%
1-81
2SC3058
DC CURRENT GAIN
SWITCHING TIME
w
U.
.t=
c:
""to
(!l
a"
u
c
Collector Current Ie (A)
GAIN BANDWIDTH PRODUCT
Collector Current Ie (A)
1
REVERSE BIAS SAFE OPERATING AREA
Collector Current Ie (A)
~
OUTPUT CAPACITANCE
u:-
oS
.!:?
to
~
::l
U
c;
.D
cJ
to
"0
u
.!!
!!
!
.
"u
Co
a....
e
0"
::l
Collector-Base Voltage VeB (V)
1-82
Collector-Emitter Voltage Vclamp (V)
2SC3058
SATURATION VOLTAGE
SWITCHING TIME
II
VCC=I50V
IC=2OA
Vi
PW=50"S
>"'
!
I jc-26"C
N
r~
w
Duty Ratio'" 1 %
Rtf--
"~1;--t--
'"
1
w
u
1
0.5
.
>
'"
fl
o
>
"o
.~
I(~t
L.......- ~
-25'C
2 C
75
c .I60 C
Yf
0.2
~~
26 C -2S'C
75'C
i3
..
~
Vce!..t
o. 1
1~-lc/6
17
~r.
Tc ·I50'C
c?l
0.1
0.2
0.5
1
10
20
Collector Current Ie (AI
0.5
-2
-5
0.5
j
0.2
S
O. 1
+c·ks"e
~~ ~
COLLECTOR SATURATION REGION
~'~
-2
-5
IS21AI
t, -lSI
0.51-+--1-+++-1
Base Current 18 (AI
181 (AI
1-83
2SC3058
FORWARD BIAS SAFE
OPERATING AREA
THERMAL RESPONSE
Time or Pulse Width t, (mS)
FORWARD BIAS SAFE
OPERATING AREA
~
~
.!:?
.!:?
1:
~
~"
u"
e
:;
u
B
<.>
~
.!!!
.!!!
8
"0
u
Collector-Emitter Voltage VCE (V)
1-84
FORWARD BIAS SAFE
OPERATING AREA
Collector-Emitter Voltage VCE (V)
2SC3058
TEST CIRCUIT USED FOR MEASUREMENT OF SWITCHING TIME (RESISTIVE)
~
~Ie
lff"
..
'B2
~
200n
I-;;RBB
IB1 ~ -IB2 ~ le/5
,!
90%
Vee '0 150V
VBB~ 5V
Ie
t,
90%
t 5t9 !f
TEST CIRCUIT USED FOR MEASUREMENT OF
VCEXISUS) AND REVERSE BIAS SAFE OPERATING AREA
t, Adjusted to Obtain Ie
200n
VSE(off)
I
Vee
"" 50V
Vclamp
",,5V
o
VCEX(SUS)
Ie ~ lOA, IB1 ~ 4A, IB2 ~ -2A, RBB ~ 2.5Q, VCI'mp~ 450V
® Reverse Bias Safe Operating Area
IB1
<; 8A,
IB2~ -2A, RBB ~
2.5Q
1-85
1-86
cP
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC3058A
Silicon High Speed Power Transistor
DESCRIPTION
..
The 2SC3058A is a silicon NPN planar general purpose, high power switching tran*
sistor fabricated with Fujitsu·s unique Ring Emitter Transistor (RET) technology.
RET devices are constructed with multiple emitters connected through diffused
ballast resistors which provide uniform current density. This structure permits the
design of high power transistors with superior switching characteristics and fre*
quency response in high current applications.
The 2SC3058A is especially well·suited for high speed/high voltage switching
systems or other applications where large SOA is required.
Features
*
*
*
OUTLINE DIMENSION
JEDEC TO-3
Applications
*
*
*
High voltage
Ultra·fast switching
Large safe operating area
*
*
Switching regulators
Motor controls
Ultrasonic osicillators
Class C and D amplifiers
Deflection circuits
ABSOLUTE MAXIMUM RATINGS
Symbol
Rating
Unit
Value
Collector to Emitter Voltage
V CEO
450
V
Collector to Base Voltage
V CBO
600
V
Emitter to Base Voltage
V EBO
Collector Current-Continuous
Collector
Current~ulsed
P w :$.10ms, D.R.:$.2%
Base Current-Continuous
Collector Power Dissipation (T c
"" 2S0C)
Junction Temperature
7
V
Ic
30
A
Icp
50
A
IB
10
A
Pc
200
W
+175
'c
'c
TJ
Storage Temperature Range
T stg
-65 - +175
2: Emitter 3: Collector (Case)
Dimension in inches and (millimeters)
1: Base
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
limits
Test Conditions
Min.
Collector to Base Breakdown Voltage
V(BR1CBO
Ie"" lmA,
IE"" 0
Emitter to Base Breakdown Voltage
V(BR)EBO
IE
Ie"" 0
Collector to Emitter Sustaining Voltage
VCEO(sus)
Ic "" O.SA,
RBE ""~.n
450
Collector to Emitter Sustaining Voltage
VCEX(sus)
Ie"" lOA, IS2
= -2A,
450
Collector Cutoff Current
ICBO
=
lmA,
Typ.
Unit
Max.
V
600
V
L"" 200 JlH (*1)
V
V
VeB = 500V. IE =0
100
!,A
100
!,A
Collector Cutoff Current
mA
Emitter Cutoff Current
DC Current Gain
hFE
Collector to Emitter Saturation Voltage
VCE(sat)
Base to Emitter Saturation Voltage
VBE(sat)
V CE =5V.
IC~
20A.
Ic=20A
IS =4A
1*2)
12
40
0.7
1.0
1.25
1.5
(*2)
Output Capacitance
Gain Bandwidth Product
30
VCE "" 10V, Ic =4A
----------------lI--~~--4
tf
(*1)
le=20A. I s ,=-l s2 =4A
*1 Test Circuit
V
V
pF
420
Rise Time
tr
--s'-o-'a-g-.-T7im-.-----------lI---,..:.,,-g--1 Vee = 150V
Fall Time
10
MHz
0.20
0.5
!"
1.70
2.0
!"
0.10
0.3
!"
*2 Pulsed P w
~
300 JlS. Duty Ratio
~
6%
copyrlaht@ 1880 by FUJITSU UMTED Mel FuJI"" IIIcrCMtlactronlc., Inc.
1-87
2SC3058A
DC CURRENT GAIN
SWITCHING TIME
W
LL
.r::
c:
"iii
50
C1
~
c:
~
20
3
u
U
10
0
Collector CUrrent Ie (A)
GAIN BANDWIDTH PRODUCT
REVERSE BIAS SAFE OPERA,TING AREA
Collector Current Ie (A)
OUTPUT CAPACITANCE
2
~
c:
LL
~
..e,
"
U
.D
~
cJ
l3u
1.lc:
.!!
;3
:s
..
"u
C-
U
~
eo"
"
0
Collector-Base Voltage VeB (V)
1-88
Collector-Emitter Voltage Vclamp (V)
2SC3058A
SWITCHING TIME
SATURATION VOLTAGE
VCC ·,S0V
I
IC·20A
v~Eisa\1
PW·SOIlS
i
S
I-
w
Duty Ratio =1 %
>"'
C• 2S'C
I
-2S'C
2S'C
7S'C
O.S
Tc·,50'C I-
~
2
'
....... ....
......
~
"
1
0.2
c:
2
~
C~
~
-25"C
75"C
O. 1
';:;
~
..
"
~1iI'
>
o
~
VCE satl
>
1J,
~~
~9,"<;o.,..q
18 al CJS
~ ~I'
TC·,50'C
~"
0.1
O.S
0.2
10
S
20
Collector Current Ie IA)
O.S
-2
-S
tf -
IB2
iC·~S,IC
O.S
_
COLLECTOR SATURATION REGION
0.2
3
O. 11--
~~ ~
h"..,
-~
I-- I-- -
~~
J
It
.9
11--, < hl-J
N
on
M
J::
....
t~l~5"e_
<- < -
!'l
~
w w 2
»u"'
-2
-S
t
0"
182 (A)
V 8E
>g'
~-5
20A
:t:>
,H
t, -IBI
1
~.~
C·25'C
Ic·'A
bW
2A
~~
0
..
UIIl
O. S
'-
~
O.2
O. 1
2
o
~~'.?
K~'6'"'1/.
0.05
"
0.1
I'
0.2
A
A7
,
A
~
A
O.S
2
~
VCE
5
10
Base Current IB (A)
1
S
IBI (A)
1-89
2SC3058A
FORWARD BIAS SAFE
OPERATING AREA
50 -Ie (pulse max.
THERMAL RESPONSE
I
g
1.0
l!
o. 5 -
.~ ~
O:u
(V L.
E -'"
Te-2s'>C
0() •
O.".!,
0.1
O. 2
',f-j
goD
~ a: o. ,51
I--
0.0
5~ ~~
~
S!
. :--
F--'
---
0.5
~
I.
.-
2
1:
=', It,
Bm.m\II
~
.!!
_.10
"t::
::>
U
0.51
;3
20
50
100 200
"\
0.21-.H++t++--+-t--t+ttttt-----''t-i\-Ntt+ttti
500
Time or Pulse Width tl (";5)
~
O"B~mI
0.05
U
10
5
20
50
100 200
500
Coliector·Emitter Voltage VeE (V)
FORWARD BIAS SAFE
OPERATING AREA
50
Ie (PU'I~~ max
"
I:
8
5 Ie (pulse) max.
20
~~'t::
\
1
U
~
9
"
5
.!!
"0
u
;3
0.2
5
.9
\
2
a" o.
.!!
"' I"
1'\
10
f
Te=75"~E
Single Pulse
20
~
FORWARD BIAS SAFE
OPEARTING AREA
2
1\1\
O
.
O.O.
1
5
2
<
o.1
1
i
0.0 5
0.0 5
u
III
5
10
20
50
100 200
500
Coliector·Emitter Voltage VeE (V)
1-90
5
10
20
50
100 200
500
Coliector·Emitter Voltage VeE (V)
2SC3058A
TEST CIRCUIT USED FOR MEASUREMENT OF SWITCHING TIME (RESISTIVE)
~
----Ie
ld"
..
IB2
~
200n
I;;RSB
V BB ==;5V
IB1 = -IB2 = le/5
,1
90%
Vee ";IS0V
Ie
t,
90%
10%
0
tstg t f
TEST CIRCUIT USED FOR MEASUREMENT OF
VCEX(SUSI AND REVERSE BIAS SAFE OPERATING AREA
t, Adjusted to Obtain Ie
200n
I
VSE(off)
Vee
V clamp
" sov
"SV
o
';r,
l6=j-L
f
VCEXISUS)
Ie = IDA, 181 = 4A, IB2 = -2A, R88 = 2.517., V,'amp= 450V
® Reverse Bias Safe Operating Area
181
:s:; 8A,
182 =-2A, R88
= 2.517.
1-91
1-92
00
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC3178, 2SC3059, 2SC3060, 2SC3061
Silicon High Speed Power Transistor
DESCRIPTION
..
This series are silicon NPN planer general purpose, high power switching transistors fabricated with Fujitsu's
unique Ring Emitter Transistor (RET) technology. RET devices are constructed with multiple emitters
connected through ballast resistors which provide uniform current density. This structure permits the design
of high power transistors with superior switching characteristics and frequency response in high current
applications.
This series are especially well·suited for" high speed/high voltage switching systems or other applications
where large SOA is required.
Features
Applications
• High voltage
• Ultra·fast switching
• Large safe operating area
•
•
•
•
•
Switching regulators
Motor controls
Ultrasonic oscillators
Class C and D amplifiers
Deflection circuits
Outline of the Series
Item
Symbol
2SC317812SC3059
2SC3060
2SC3061
Unit
Collector to Base Breakdown Voltage
VeBo
1200
V
Collector to Emitter Breakdown Voltage
VeEo
850
V
Emitter to Base Breakdown Voltage
V EBO
Collector Current (continuous)
Ie
Collector Current (pulsed)
lep
Collector Power Dissipation
@
900V
I
100
2.5
RBSOA
V
5
4
60
Pc
Reverse Bias Safe Operating Area
7
2
10
A
8
20
A
150
200
W
5
7
A
Rise Time
(Typ.)
tr
0.20
Il S
Storage Time
(Typ.)
t S'9
2.50
IlS
Fall Time
(Typ.)
IlS
V
tl
0.07
Collector to Emitter Saturation Voltage (Typ.)
VCE(sat)
0.3
Base to Emitter Saturation Voltage (Typ.)
VSE(sat)
-
Package
copyrighl© , ... ~ FUJ1T8U U..1ED ond
V
1.0
TO·220
I
TO·3
-
Fu,'" _ _... ,....
1-93
2SC3178,2SC3059,2SC3060,2SC3061
OUTLINE DIMENSION
2SC3059
2SC3060
2SC3061
2SC3178
.001l..:1N(' I)JMtNslQk' .
J~I)EC
TO·22G··
'-,"
1-94
'
.
QIJTLINE .DIIIiIENSIOIIr>
JEOECT(»'
2SC3178, 2SC3059, 2SC3060, 2SC3061
TEST CIRCUIT USED FOR MEASUREMENT OF SWITCHING TIME (RESISTIVE)
lifo
~
--Ie
'.2
~
200n
----r;;-
D
R ••
VB.
'B'--1.2/3 -
90%
Vee ";400V
~5V
'e llO
Ie
90%
'l
t,
0
t stg tf
TEST CIRCUIT USED FOR MEASUREMENT OF
VCEXISUS) AND REVERSE BIAS SAFE OPERATING AREA
Ie
L-l mH
t, Adjusted to Obtain Ie
200n
I
VSE(off)
Vee
"; 70V
Vel amp
";5V
VCEXISUS)
Type No.
l6d-L
REVERSE BIAS SAFE OPERATING AREA
Ie IA)
'B2IA)
RBBIn!
Type No.
IB2 IA)
RBBln)
-0.3
20
2SC3178
2SC3178
2SC3059
r ~,
2.5
-0.3
20
2SC3059
2SC30S0
5.0
-O.S
10
2SC30S0
-O.S
10
2SC30S1
7.0
-1.2
5
2SC3061
-1.2
5
V clamp"" 900V
1-95
1-96
00
January 1990
FUJITSU
Edition 1.1
PRODUCT PROFILE
2SC3178
Silicon High Speed Power Transistor
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector to Emitter Voltage
V CEO
850
V
Collector to Base Voltage
V CBO
1200
V
Emitter to Base Voltage
V EBO
7
V
Collector Current·Continuous
Ic
2
A
Collector Current·Pulsed Pw ~ 25 fls, D.R.~ 50%
Icp
4
A
Base Current-Continuous
IB
1
A
Collector Power Dissipation (Tc = 25°C)
Pc
60
W
Junction Temperature
Tj
+150
°c
Storage Temperature Range
T stg
-55
~
..
°c
+150
ELECTRICAL CHARACTERISTICS (T. = 25°C)
Parameter
Symbol
Collector to Base Breakdown Voltage
VCBR)CBO
Test Conditions
Limit
Unit
Min.
Typ.
Max.
Ic = lmA, IE =0
1200
-
-
V
Emitter to Base Breakdown Voltage
VCBR)EBO
IE = lmA, Ic = 0
7
-
-
V
Collector to Emitter Sustaining Voltage
VCBR)CEO
Ic = 10mA, RBE =~n
850
-
-
V
Collector to Emitter Sustaining Voltage
V CEX (SUS)
Ic=2.5A, IB2=-0.3A, L=lmH(*I)
900
-
-
V
Collector Cutoff Current
ICBO
V eB = 1000V, IE = 0
-
-
100
IlA
Collector Cutoff Current
ICBO
V CB = 1000V, IE = 0, Tc = 100°C
-
1
mA
Emitter Cutoff Current
lEBO
V EB = 6V, Ic = 0
-
-
100
IlA
DC Current Gain
hFE
VCE = 5V, Ic = lA (*2)
10
15
30
-
Collector to Emitter Saturation Voltage
VeE (sat)
-
0.3
1.5
V
Ic = lA, IB = 0.2A (*2)
Base to Emitter Saturation Voltage
V BE (sat)
-
1.0
2.0
V
Output Capacitance
Cob
V CB = 10V, IE = 0, f = lMHz
-
60
-
pF
Gain Bandwidth Product
fT
VeE = 10V, Ic = 0.2A
-
15
-
MHz
Rise Time
t,
-
0.2
0.5
Ils
-
2.5
3.5
IlS
0.07
0.3
IlS
Storage Time
t stg
Fall Time
tj
*1 Test Circuit
Vcc =400V (*1)
Ic = lA, 31 B1 = -)B2 = 0.3A
*2 Pulse Pw ~ 300 IlS,Duty Ratio ~ 6%
1-97
2SC3178
SWITCHING TIME
DC CURRENT GAIN
Collector Current Ie (A)
0.1~~.
GAIN BANDWIDTH PRODUCT
50
0.05~
TC=25·C _
V E = 10V
N
J:
e
p
.t"
g 20
"~
"-
~
.t:
Collector Current Ie (A)
..--
....... ~
~ 10
~
-g
~
·i
5
CJ
REVERSE BIAS SAFE OPERATING AREA
0.1
0.2
0.5
2
Collector Current Ie (AI
OUTPUT CAPACITANCE
Collector-Base Voltage
1-98
Vee (V)
BOO
1200
Collector-Emitter Voltage V clamp (V)
1601)
2SC3178
SWITCHING TIME
vee =400V
Ie = lA
Pw =50#'
Duty ratio = 1%
SATURATION VOLTAGE
20
10
..
Te ·26°C
N,~
q,;...,-= ~
"'
"q~
"Z
"'
1'-.
2
0.1
"
0.2
-I B2 (A)
III
I
0.02
Te = 25°C
10
.01
0
.02
0.05
0.1
0.2
0.5
2
Collector Current Ie (A)
0.2
" ~q..,..,
,~
o
r--:'..,
COLLECTOR SATURATION REGION
"'
1-++H-hf1--.1
0.05
??
w w
0.1
t
"0
~
> Ii'
Te· 25°C
.5 il
OW
~o m
~ --1I-N-+4-H-l-H--+---l
I-H+I-I-Il-----t-I-f-I-+++II+---\-f-1I-+ VBE
"I.e?;::
.,,"'."
"
=
-
+>-1--4---1
I-H+I-I-it-<-----t-+-f-I-++++II----'~2A ~....~~'I----+___l
1 I-H+I-I-i+-----t-1I-f-1-1A!
O.SA
IC·0.2A
UID
~q,.,.
0.05
~
•
~~~~~---+-+~H-+1~~-++-~-+4-~H+----I-~
.
H
~ .~
'\
Te= 25"c
.( ~ ..: -H-l-++t+---+---l
»
t, -IB1
1
II
um
0.2
-I B2 (A)
0.2
1-H-+1-H1,~ - - I ~
t
.~ -
\
A
1.SA
':
\
:\
-;;;.
\.
~
ttH!rnE~~~~\~~i'-~~;;HK~£j
C ... .
O[
j
0.005 0.01
0.02
0.05
0.1
0.2
0.5
I
2
Base Current 18 (A)
0.1
0.2
IB1 (A)
6
1-99
2SC3.178
THERMAL RESPONCE
pf.&,
;;
0:
~
0:
~ 0.2
~
6;;;iI li-
I
~ 0.5
'ij
lit
. .".
(I
~~
~
~
~~
Iii
rul"'"
' ~,
~..,'#
.~
,
O. 1
0.5
T ... 26.~
10
2
20
50
100
200
,
500 1000
Time or Pulse Width tl (ms)
FOWARD BIAS SAFE OPERATING AREA
DMaX.
FOWARO BIAS SAFE OPERATING AREA
101~g
,,"~(
1 0 - , . _
2
'ftl~"M"'(.
5
r :