2SC3358

User Manual: 2SC3358

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UTC 2SC3358

NPN SILICON EPITAXIALTRANSISTOR

HIGH FREQUENCY LOW NOISE
AMPLIFIER

3

2

FEATURES

4

*Low Noise and High Gain
*High Power Gain

1

TO-50

1:COLLECTOR 2:EMITTER 3:BASE 4:EMITTER

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER

SYMBOL

RATING

UNIT

VCBO
VCEO
VEBO
Ic
PT
Tj
Tstg

20
12
3
100
250
150
-65 ~ +150

V
V
V
mA
mW
°C
°C

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction Temperature
Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER

SYMBOL

TEST CONDITIONS

Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain bandwidth Product
Feed-Back Capacitance
Noise figure

ICBO
IEBO
hFE
fT
Cre
NF

VCB=10V, IE=0
VEB=1V, IC=0
VCE=10V, IC=20mA
VCE=10V, IC=20mA
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=7mA, f=1.0GHz

UTC

MIN

TYP

50

MAX

UNIT

1.0
1.0
300

µA
µA

7
1.0
2.0

UNISONIC TECHNOLOGIES CO., LTD.

GHz
pF
dB

1

QW-R212-001,A

UTC 2SC3358

NPN SILICON EPITAXIALTRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UTC

UNISONIC TECHNOLOGIES CO., LTD.

2

QW-R212-001,A
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