2SC3358
User Manual: 2SC3358
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UTC 2SC3358 NPN SILICON EPITAXIALTRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R212-001,A
HIGH FREQUENCY LOW NOISE
AMPLIFIER
FEATURES
*Low Noise and High Gain
*High Power Gain
1
42
3
TO-50
1:COLLECTOR 2:EMITTER 3:BASE 4:EMITTER
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Collector current Ic 100 mA
Total power dissipation PT 250 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cutoff Current ICBO V
CB=10V, IE=0 1.0 µA
Emitter Cutoff Current IEBO V
EB=1V, IC=0 1.0 µA
DC Current Gain hFE V
CE=10V, IC=20mA 50 300
Gain bandwidth Product fT VCE=10V, IC=20mA 7 GHz
Feed-Back Capacitance Cre VCB=10V, IE=0, f=1.0MHz 1.0 pF
Noise figure NF VCE=10V, IC=7mA, f=1.0GHz 2.0 dB
UTC 2SC3358 NPN SILICON EPITAXIALTRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R212-001,A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
