2N3904, MMBT3904, PZT3904 Datasheet. Www.s Manuals.com. Fairchild

User Manual: Marking of electronic components, SMD Codes 1A, 1A **, 1A-, 1A1, 1A18, 1A20, 1A25, 1A30, 1A35, 1A4, 1A40, 1A45, 1A50, 1A55, 1A60, 1A=***, 1AM, 1AW, 1Ap, 1At. Datasheets BC846A, BC846AT, BC846AW, DAN202UM, FMMT3904, IRLML2402, KST3904, MMBT3904, MMBT3904LT1, MT501, RT9169-26GB, ZXTN25020DFLTA, ZXTN25040DFH.

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2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

2N3904

PZT3904

MMBT3904
C

C

E

E
TO-92

SOT-23

Absolute Maximum Ratings*
Symbol

Value

Units

40

V

Collector-Base Voltage

60

V

Emitter-Base Voltage

6.0

V

200

mA

-55 to +150

°C

Collector-Emitter Voltage

VCBO
VEBO
IC

B

Ta = 25°C unless otherwise noted

Parameter

VCEO

TJ, Tstg

SOT-223

B

Mark:1A

EBC

C

Collector Current - Continuous
Operating and Storage Junction Temperature Range

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.

Thermal Characteristics
Symbol
PD

Ta = 25°C unless otherwise noted

Max.

Parameter

2N3904
625
5.0

Total Device Dissipation
Derate above 25°C

RθJC

Thermal Resistance, Junction to Case

83.3

RθJA

Thermal Resistance, Junction to Ambient

200

*MMBT3904
350
2.8

**PZT3904
1,000
8.0

357

125

Units
mW
mW/°C
°C/W
°C/W

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0

www.fairchildsemi.com
1

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

October 2011

Symbol

Ta = 25°C unless otherwise noted

Parameter

Test Condition

Min.

Max.

Units

OFF CHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

IBL
ICEX

IC = 1.0mA, IB = 0

40

V

IC = 10μA, IE = 0

60

V

IE = 10μA, IC = 0

6.0

V

Base Cutoff Current

VCE = 30V, VEB = 3V

50

nA

Collector Cutoff Current

VCE = 30V, VEB = 3V

50

nA

ON CHARACTERISTICS*
hFE

DC Current Gain

IC = 0.1mA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V

40
70
100
60
30

300

VCE(sat)

Collector-Emitter Saturation Voltage

IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA

0.2
0.3

V
V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA

0.65

0.85
0.95

V
V

Current Gain - Bandwidth Product

IC = 10mA, VCE = 20V,
f = 100MHz

300

Cobo

Output Capacitance

VCB = 5.0V, IE = 0,
f = 1.0MHz

4.0

pF

Cibo

Input Capacitance

VEB = 0.5V, IC = 0,
f = 1.0MHz

8.0

pF

NF

Noise Figure

IC = 100μA, VCE = 5.0V,
RS = 1.0kΩ,
f = 10Hz to 15.7kHz

5.0

dB

VCC = 3.0V, VBE = 0.5V
IC = 10mA, IB1 = 1.0mA

35

ns

SMALL SIGNAL CHARACTERISTICS
fT

MHz

SWITCHING CHARACTERISTICS
td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA

35

ns

200

ns

50

ns

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

Ordering Information
Part Number

Marking

Package

Packing Method

Pack Qty

2N3904BU

2N3904

TO-92

BULK

10000

2N3904TA

2N3904

TO-92

AMMO

2000

2N3904TAR

2N3904

TO-92

AMMO

2000

2N3904TF

2N3904

TO-92

TAPE REEL

2000

2N3904TFR

2N3904

TO-92

TAPE REEL

2000

MMBT3904

1A

SOT-23

TAPE REEL

3000

MMBT3904_D87Z

1A

SOT-23

TAPE REEL

10000

PZT3904

3904

SOT-223

TAPE REEL

2500

© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0

www.fairchildsemi.com
2

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

Electrical Characteristics

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

500
V CE = 5V

400
125 °C

300
25 °C

200
- 40 °C

100
0
0.1

1
10
I C - COLLECTOR CURRENT (mA)

100

Base-Emitter Saturation
Voltage vs Collector Current
1

0.8

VBE(ON)- BASE-EMITTER ON VOLTAGE (V)

VBESAT- BASE-EMITTER VOLTAGE (V)

h FE - TYP ICAL PULSED CURRE NT GAIN

Typical Pulsed Current Gain
vs Collector Current

ββ = 10

- 40 °C
25 °C

0.6
125 °C

0.4
0.1
IC

1
10
- COLLECTOR CURRENT (mA)

100

Collector-Emitter Saturation
Voltage vs Collector Current
0.15

125 °C

0.1
25 °C

0.05
- 40 °C

0.1

1
VCE = 5V
0.8

- 40 °C
25 °C

0.6
125 °C

0.4

0.2
0.1

1
10
I C - COLLECTOR CURRENT (mA)

100

10
f = 1.0 MHz

VCB = 30V

CAPACITANCE (pF)

ICBO- COLLECTOR CURRENT (nA)

100

Capacitance vs
Reverse Bias Voltage

500

10
1
0.1

25

1
10
I C - COLLECTOR CURRENT (mA)

Base-Emitter ON Voltage vs
Collector Current

Collector-Cutoff Current
vs Ambient Temperature
100

ββ = 10

50
75
100
125
TA - AMBIENT TEMPERATURE ( °C)

4
3

C ibo

2
C obo

1
0.1

150

© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0

5

1
10
REVERSE BIAS VOLTAGE (V)

100

www.fairchildsemi.com
3

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

Typical Performance Characteristics

Noise Figure vs Source Resistance

Noise Figure vs Frequency

12
I C = 1.0 mA
R S = 200ΩΩ

10

V CE = 5.0V

I C = 1.0 mA

NF - NOISE FIGURE (dB)

NF - NOISE FIGURE (dB)

12

μA
I C = 50 μA
R S = 1.0 kΩ
kΩ

8

I C = 0.5 mA
R S = 200ΩΩ

6
4
2

μA, R S = 500 Ω
I C = 100 μA
Ω

0
0.1

1
10
f - FREQUENCY (kHz)

10
I C = 5.0 mA

6

μA
I C = 100 μA

4
2
0
0.1

100

V CE = 40V
I C = 10 mA

PD - POWER DISSIPATION (W)

- CURRENT GAIN (dB)
fe

h

θθ

10
100
f - FREQUENCY (MHz)

1000

SOT-223
0.75

TO-92

0.5

SOT-23
0.25

0

0

Turn-On Time vs Collector Current
500
I B1 = I B2 =

VCC = 40V

10

t r - RISE TIME (ns)

TIME (nS)

15V

2.0V
10
10
I C - COLLECTOR CURRENT (mA)

100

150

I B1 = I B2 =

Ic
10

T J = 25°C
T J = 125°C

5

100

© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0

125

10

t d @ VCB = 0V
1

50
75
100
TEMPERATURE (o C)

Rise Time vs Collector Current

t r @ V CC = 3.0V

5

25

500

Ic

40V
100

100

1

θθ - DEGREES

0
20
40
60
80
100
120
140
160
180

h fe

1

1
10
kΩ) )
R S - SOURCE RESISTANCE ((kΩ

Power Dissipation vs
Ambient Temperature

Current Gain and Phase Angle
vs Frequency
50
45
40
35
30
25
20
15
10
5
0

μA
I C = 50 μA

8

1

10
I C - COLLECTOR CURRENT (mA)

100

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4

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

Typical Performance Characteristics (continued)

Storage Time vs Collector Current
I B1 = I B2 =

T J = 25°C

Fall Time vs Collector Current
500

Ic

I B1 = I B2 =

10

t f - FALL TIME (ns)

t S - STORAGE TIME (ns)

500

100
T J = 125°C

10
5

T J = 125°C

100
T J = 25°C

1

10
I C - COLLECTOR CURRENT (mA)

5

100

1

10
I C - COLLECTOR CURRENT (mA)

Current Gain
V CE = 10 V
f = 1.0 kHz
T A = 25oC

100

10
0.1

1
I C - COLLECTOR CURRENT (mA)

1

1
I C - COLLECTOR CURRENT (mA)

10

© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0

V CE = 10 V
f = 1.0 kHz
T A = 25oC

10

1
0.1

1
I C - COLLECTOR CURRENT (mA)

10

Voltage Feedback Ratio

)
_4

h re - VOLTAGE FEEDBACK RATIO (x10

V CE = 10 V
f = 1.0 kHz
T A = 25oC

10

0.1
0.1

100

10

Input Impedance
100

100

Output Admittance
μmhos)
h oe - OUTPUT ADMITTANCE ( μnhos

h fe - CURRENT GAIN

VCC = 40V

10

500

(kΩ)
Ω)
h ie - INPUT IMPEDANCE (k

Ic
10

10
7

V CE = 10 V
f = 1.0 kHz
T A = 25oC

5
4
3
2

1
0.1

1
I C - COLLECTOR CURRENT (mA)

10

www.fairchildsemi.com
5

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

Typical Performance Characteristics (continued)

2N3904 / MMBT3904 / PZT3904 — NPN General Purpose Amplifier

Test Circuits
3.0 V

275 ΩΩ

300ns
300
ns

10.6 V
Duty Cycle == 2%

kΩ
Ω
10 KΩ
0

C1 << 4.0pF
4.0 pF

- 0.5 V
1.0 ns
<< 1.0ns

FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
10
500500
μs μs
10 <
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